WorldWideScience

Sample records for hypercoordinate silicon compounds

  1. Selective organic synthesis through generation and reactivity control of hyper-coordinate metal species.

    Science.gov (United States)

    Hiyama, Tamejiro

    2008-01-01

    This paper is a review of my 40 years of research at Kyoto, Sagamihara, and Yokohama, all based on the generation of hyper-coordinate metal species such as ate complexes and pentacoordinate silicates. The topics are: (i) carbenoid reagents for carbon-carbon bond-forming reactions, (ii) nucleophilic substitution at acetal carbons using aluminate reagents, (iii) preparation of magnesium enolates and its reaction with nitriles, (iv) Cr(II) reagents for reduction of organic halides and highly selective carbon-carbon bond formation, (v) organic synthesis with organosilion reagents/fluoride ions, (vi) cross-coupling reaction of organosilicon compounds, and (vii) silicon-based conjugate addition to alpha,beta-unsaturated carbonyl acceptors.

  2. Easy access to silicon(0) and silicon(II) compounds.

    Science.gov (United States)

    Mondal, Kartik Chandra; Samuel, Prinson P; Tretiakov, Mykyta; Singh, Amit Pratap; Roesky, Herbert W; Stückl, A Claudia; Niepötter, Benedikt; Carl, Elena; Wolf, Hilke; Herbst-Irmer, Regine; Stalke, Dietmar

    2013-04-15

    Two different synthetic methodologies of silicon dihalide bridged biradicals of the general formula (L(n)•)2SiX2 (n = 1, 2) have been developed. First, the metathesis reaction between NHC:SiX2 and L(n): (L(n): = cyclic akyl(amino) carbene in a 1:3 molar ratio leads to the products 2 (n = 1, X = Cl), 4 (n = 2, X = Cl), 6 (n = 1, X = Br), and 7 (n = 2, X = Br). These reactions also produce coupled NHCs (3, 5) under C-C bond formation. The formation of the coupled NHCs (L(m) = cyclic alkyl(amino) carbene substituted N-heterocyclic carbene; m = 3, n = 1 (3) and m = 4, n =2 (5)) is faster during the metathesis reaction between NHC:SiBr2 and L(n): when compared with that of NHC:SiCl2. Second, the reaction of L(1):SiCl4 (8) (L(1): =:C(CH2)(CMe2)2N-2,6-iPr2C6H3) with a non-nucleophilic base LiN(iPr)2 in a 1:1 molar ratio shows an unprecedented methodology for the synthesis of the biradical (L(1)•)2SiCl2 (2). The blue blocks of silicon dichloride bridged biradicals (2, 4) are stable for more than six months under an inert atmosphere and in air for one week. Compounds 2 and 4 melt in the temperature range of 185 to 195 °C. The dibromide (6, 7) analogue is more prone to decomposition in the solution but comparatively more stable in the solid state than in the solution. Decomposition of the products has been observed in the UV-vis spectra. Moreover, compounds 2 and 4 were further converted to stable singlet biradicaloid dicarbene-coordinated (L(n):)2Si(0) (n = 1 (9), 2 (10)) under KC8 reduction. Compounds 2 and 4 were also reduced to dehalogenated products 9 and 10, respectively when treated with RLi (R = Ph, Me, tBu). Cyclic voltametry measurements show that 10 can irreversibly undergo both one electron oxidation and reduction.

  3. Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

    Energy Technology Data Exchange (ETDEWEB)

    Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

    2014-11-01

    Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

  4. Silicon compounds in solution during bacterial degradation of quartz

    Energy Technology Data Exchange (ETDEWEB)

    Avakyan, Z.A.; Belkanova, N.P.; Karavayko, G.I.; Piskunov, V.P.

    A study was made of the form of silicon compounds in solution in the following systems: distilled water-exopolysaccharides of Bacillus mucilaginosus-monomeric silica; distilled water-suspension of B. mucilaginosus cells-quartz; culture fluids-growing B. mucilaginosus or Thiobacillus thioparus cultures-quartz. In control variants, which contained no exopolysaccharides or bacteria, all of the silicon in solution is demonstrable with the reaction with molybdic acid in the form of monosilicic acid and, perhaps, its lower oligomers. The presence of exopolysaccharides or bacteria leads to the appearance of three forms of silicon compounds: monomeric, polymeric as demonstrable by reaction with molybdic acid after alkaline hydrolysis, and bound, which is demonstrable only by the sintering method. The pH, concentrations of exopolysaccharides and silicon are factors that control the proportion of these forms of silica in the systems studied with exopolysaccharides and resting cells. An increase in the concentration of polysaccharides in the system, as well as changes in medium reaction in the alkaline direction, shift equilibrium toward the formation of the bound form of silica. The mechanism of microbiological degradation of quartz and the formation of silicon compounds is discussed.

  5. Stereochemistry of silicon in oxygen-containing compounds

    Science.gov (United States)

    Serezhkin, V. N.; Urusov, V. S.

    2017-01-01

    Specific stereochemical features of silicon in oxygen-containing compounds, including hybrid silicates with all oxygen atoms of SiOn groups (n = 4, 5, or 6) entering into the composition of organic anions or molecules, are described by characteristics of Voronoi—Dirichlet polyhedra. It is found that in rutile-like stishovite and post-stishovite phases with the structures similar to those of CaCl2, α-PbO2, or pyrite FeS2, the volume of Voronoi—Dirichlet polyhedra of silicon and oxygen atoms decreases linearly with pressure increasing to 268 GPa. Based on these results, the possibility of formation of new post-stishovite phases is shown, namely, the fluorite-like structure (transition predicted at 400 GPa) and a body-centered cubic lattice with statistical arrangement of silicon and oxygen atoms ( 900 GPa).

  6. Experimental and Theoretical Investigations of CB8-:Towards Rational Design of Hypercoordinated Planar Chemical Species

    Energy Technology Data Exchange (ETDEWEB)

    Averkiev, Boris B.; Wang, Leiming; Huang, Wei; Wang, Lai S.; Boldyrev, Alexander I.

    2009-11-01

    We demonstrated in our joint photoelectron spectroscopic and ab initio study that wheel-type structures with a boron ring are not appropriate for designing planar molecules with a hypercoordinate central carbon on the example of CB8, and CB8 clusters. According to our chemical bonding model, in the wheel type structures the central atom is involved in delocalized bonding, while peripheral atoms are involved in both delocalized bonding and 2c-2e -bonding. Since carbon is more electronegative than boron it favors peripheral positions where it can participate in 2c-2e -bonding. To design a chemical species with a central hypercoordinate carbon atom, one should consider electropositive ligands, which would have lone pairs instead of 2c-2e peripheral bonds. We presented a chemical bonding model capable of rationalizing and predicting structures either with a boron ring or a central planar carbon. This represents the first step toward rational design of nano- and subnano-structures with tailored properties.

  7. Optical characterization of RTV615 silicone rubber compound

    CERN Document Server

    Li, W

    2014-01-01

    Room Temperature Vulcanized (RTV) silicone compounds are commonly used to bond optical components. For our application, we needed to identify an adhesive with good ultraviolet transmission characteristics, to couple photomultipliers to quartz windows in a Heavy Gas Cerenkov detector that is being constructed for Experimental Hall C of Jefferson Lab to provide pi/K separation up to 11 GeV/c. To this end, we present the light transmission results for Momentive RTV615 silicone rubber compound for wavelengths between 195-400 nm, obtained with an adapted reflectivity apparatus at Jefferson Lab. All samples cured at room temperature have transmissions ~93% for wavelengths between 360-400 nm and fall sharply below 230 nm. Wavelength dependent absorption coefficients were extracted with four samples of different thicknesses cured at normal temperature (25oC for 7 days). The absorption coefficient drops approximately two orders in magnitude from 220-400 nm, exhibiting distinct regions of flattening near 250 nm and 330...

  8. Fiscal 1997 project on the R and D of industrial scientific technology under consignment from NEDO. Report on the results of the R and D of silicon-based polymeric materials (development of liquid methane fueled aircraft engine); 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo / Shin energy Sangyo gijutsu Sogo Kaihatsu Kiko itaku. Keisokei kobunshi zairyo no kenkyu kaihatsu (methane nenryo kokukiyo engine kaihatsu) seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    This R and D aims at establishing the basic technology on the molecular design, synthesis, use as materials, and evaluation of silicon-based polymers, of which excellent electronic/optical functions, high heat-resistance/combustion-resistance/dynamic characteristic are expected. The paper introduced the results of the fiscal 1997 R and D of them. The themes are as follows: technology of synthesis of silicon-based polymeric materials with sea-island microstructures, interstitial type structure forming technology, composite materials with organometallic complexes and silicon-based polymers, silicon-based polymer structural materials with ring structures, optimization of the Wurtz`s synthesis method of silicon-based polymers, unsaturated and hypercoordinate organosilicic compounds, function of silicon-based polymers, synthesis and polymerization of new silicon-based monomers, development of a new synthesis method of polysilane and the function, development of new application of silicon-based polymers in imaging devices for recording/memory/display of information, molecular design of {pi}-conjugate and {sigma}-conjugate compounds including silicon, and conformation and electronic state of silicon-based polymeric materials. 186 refs., 141 figs., 68 tabs.

  9. Volatile organic silicon compounds: the most undesirable contaminants in biogases.

    Science.gov (United States)

    Ohannessian, Aurélie; Desjardin, Valérie; Chatain, Vincent; Germain, Patrick

    2008-01-01

    Recently a lot of attention has been focused on volatile organic silicon compounds (VOSiC) present in biogases. They induce costly problems due to silicate formation during biogas combustion in valorisation engine. The cost of converting landfill gas and digester gas into electricity is adversely affected by this undesirable presence. VOSiC in biogases spark off formation of silicate deposits in combustion chambers. They engender abrasion of the inner surfaces leading to serious damage, which causes frequent service interruptions, thus reducing the economic benefit of biogases. It is already known that these VOSiC originate from polydimethylsiloxanes (PDMS) hydrolysis. PDMS (silicones) are used in a wide range of consumer and industrial applications. PDMS are released into the environment through landfills and wastewater treatment plants. There is a lack of knowledge concerning PDMS biodegradation during waste storage. Consequently, understanding PDMS behaviour in landfill cells and in sludge digester is particularly important. In this article, we focused on microbial degradation of PDMS through laboratory experiments. Preliminary test concerning anaerobic biodegradation of various PDMS have been investigated. Results demonstrate that the biotic step has an obvious influence on PDMS biodegradation. IWA Publishing 2008.

  10. Inhibitive Mechanisms of Two Silicon Compounds on Powdery Mildew of Melon

    Institute of Scientific and Technical Information of China (English)

    GUO Yu-rong; LIU Lei; ZHAO Hua; CHEN De-rong; BI Yang

    2005-01-01

    Seedlings of Yujinxiang melon were used to investigate the effect and inhibitive mechanism of sodium silicate and nanosized silicon oxide on powdery mildew. The results showed that the severity of powdery mildew on melon seedlings was lowered significantly by treatment with either of the two silicon compounds, although the effect of sodium silicate was more powerful than silicon oxide. Application of sodium silicate to the seedlings caused significant increases in the activity of peroxidase (POD) and of 3-1,3-glucosidase (GLU), both enzymes are known to be associated with the disease defence systems of plants. SEM-EDX analysis of sodium silicate-treated leaves of the melon seedlings showed an elevated level of silicon deposit at stomata and epidermis. Treatment with nanosized silicon oxide also resulted in a similar increase in silicon deposit, but the treatment did not cause a significant increase in POD activity.

  11. Chemical reactivity of hypervalent silicon compounds: The local hard and soft acids and bases principle viewpoint

    Indian Academy of Sciences (India)

    Francisco Méndez; María De L Romero; José L Gazquez

    2005-09-01

    The silicon atom may increase its coordination number to values greater than four, to form pentacoordinated compounds. It has been observed experimentally that, in general, pentacoordinated compounds show greater reactivity than tetracoordinated compounds. In this work, density functional theory is used to calculate the global softness and the condensed softness of the silicon atom for SiHF4- and SiHF$^{1-}_{5-n}$. The values obtained show that the global and condensed softness are greater in the pentacoordinated compounds than in the tetracoordinated compounds, a result that explains the enhanced reactivity. If the results are analysed through a local version of the hard and soft acids and bases principle, it is possible to suggest that in nucleophilic substitution reactions, soft nucleophiles preferably react with SiHF$^{1-}_{5-n}$, and hard nucleophiles with SiHF4-.

  12. Synthesis and photoluminescence studies of silicon nanoparticles embedded in silicon compound films

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    High-density silicon nanoparticles with wellcontrolled sizes were grown onto cold substrates in amorphous SiNx and SiC matrices by plasma-enhanced chemical vapor deposition.Strong,tunable photoluminescence across the whole visible light range has been measured at room temperature from such samples without invoking any post-treatment,and the spectral features can find a qualitative explanation in the framework of quantum confinement effect.Moreover,the decay time was for the first time brought down to within one nanosecond.These excellent features make the silicon nanostructures discussed here very promising candidates for light-emitting units in photonic and optoelectronic applications.

  13. Electrocatalytic Formation and Inactivation of Intermetallic Compounds in Electrorefining of Silicon

    Science.gov (United States)

    Olsen, Espen; Rolseth, Sverre; Thonstad, Jomar

    2010-08-01

    Silicon for solar cell purposes is today produced by an energy intensive process exhibiting high irreversible thermodynamic energy losses. The purity of the product; 99,9999999 pct (9N), far exceeds what is generally accepted to be the requirements for photovoltaic purposes (4-6N). According to thermodynamics, all elements except boron may be removed from silicon by three layer electrochemical refining above the melting point of Si. Boron, on the other hand, shows higher affinity to specific transition metals compared to silicon. This may be exploited by applying two principles in parallel; electrochemical refining and electrocatalyzed reaction-precipitation of transition metal borides as heavy, stable particles. In this study we report on the formation of such compounds at the cathode-electrolyte interface during electrochemical refining. The trends and mechanisms observed in the laboratory scale investigation indicate that high purity silicon may be produced in industrial scale reactors at low cost- and energy intensity.

  14. Volatile organic silicon compounds in biogases: development of sampling and analytical methods for total silicon quantification by ICP-OES.

    Science.gov (United States)

    Chottier, Claire; Chatain, Vincent; Julien, Jennifer; Dumont, Nathalie; Lebouil, David; Germain, Patrick

    2014-01-01

    Current waste management policies favor biogases (digester gases (DGs) and landfill gases (LFGs)) valorization as it becomes a way for energy politics. However, volatile organic silicon compounds (VOSiCs) contained into DGs/LFGs severely damage combustion engines and endanger the conversion into electricity by power plants, resulting in a high purification level requirement. Assessing treatment efficiency is still difficult. No consensus has been reached to provide a standardized sampling and quantification of VOSiCs into gases because of their diversity, their physicochemical properties, and the omnipresence of silicon in analytical chains. Usually, samplings are done by adsorption or absorption and quantification made by gas chromatography-mass spectrometry (GC-MS) or inductively coupled plasma-optical emission spectrometry (ICP-OES). In this objective, this paper presents and discusses the optimization of a patented method consisting in VOSiCs sampling by absorption of 100% ethanol and quantification of total Si by ICP-OES.

  15. Experimental Investigation on Electrical Tracking of Epoxy Resin Compound with Silicon Rubber%Experimental Investigation on Electrical Tracking of Epoxy Resin Compound with Silicon Rubber

    Institute of Scientific and Technical Information of China (English)

    Abdul Syakur; Hamzah Berahim; Tumiran; Rochmadi

    2011-01-01

    The use of polymer materials as electrical insulators on transmission and distribution lines has been increas- ing such,as epoxy resin. Several advantages of using epoxy resin as an insulating material are its low density, better dielectric properties, and epoxy resin has higher volume resistivity than that of the glass and porcelain. However, ep- oxy resin has some disadvantages when it is used in tropical areas concerning with the humidity, high ultraviolet radia- tion, acid rain and effects of contaminants. Consequently, insulator surface will be easily damaged due to electrical tracking, which is indicated by the surface tracking. In this paper, the surface tracking on epoxy resin compound with silicon rubber has been investigated. The test was done based on the method of Inclined--Planed Tracking (IPT) IEC 587.. 1984 with NH4 C1 as contaminant. The test materials used were epoxy resins based on Diglycidyl Ether of Bisphenol A (DGEBA) and Methaphenylene Diamine (MPDA) compound with silicon rubber ( SiR ) with the dimensions of 50 mm×120 mm and the thickness of 6 mm. The flow rate of contaminant was 0.3 mL/min. The 3.5 kV AC high voltage 50 Hz was applied to the top electrodes. The experimental results show that the contact angle of hydrophobic was affected by compound of silicon rubber. The surface tracking, time to tracking and discharge current were affected by applied voltage, contamination and contact angle. By using micro--cameras, the surface damage was detected. The severest damaged sample surface on a sample had small contact angle. On the other hand, samples with the greatest contact angle needed longer time to have surface damage in the surface discharge. This shows that it is more difficult for large contact angle samples or more hydrophobic to have surface discharge. Epoxy resin compound with silicon rubber has contact angle of hydrophobic greater than epoxy resin without silicon rubber.

  16. Removal of H2S and volatile organic sulfur compounds by silicone membrane extraction

    NARCIS (Netherlands)

    Manconi, I.; Lens, P.N.L.

    2009-01-01

    BACKGROUND: This study explores an alternative process for the abatement and/or desulfurization of H2S and volatile organic sulfur compounds (VOSC) containing waste streams, which employs a silicone-based membrane to simultaneously remove H2S and VOSC. An extractive membrane reactor allows the selec

  17. Reliability at the Chip Interfaces: Delaminating the Silicon Die from Molding Compound

    NARCIS (Netherlands)

    Schlottig, G.

    2012-01-01

    This book describes a setup that allows to delaminate the Silicon-to-Molding Compound interface for obtaining interfacial fracture parameters: the Mixed Mode Chisel setup (MMC). With this device for the first time the delamination can be initiated and propagated, while preventing the occurrence of r

  18. Reliability at the Chip Interfaces: Delaminating the Silicon Die from Molding Compound

    NARCIS (Netherlands)

    Schlottig, G.

    2012-01-01

    This book describes a setup that allows to delaminate the Silicon-to-Molding Compound interface for obtaining interfacial fracture parameters: the Mixed Mode Chisel setup (MMC). With this device for the first time the delamination can be initiated and propagated, while preventing the occurrence of r

  19. In depth study of molybdenum silicon compound formation at buried interfaces

    Science.gov (United States)

    Zoethout, Erwin; Louis, Eric; Bijkerk, Fred

    2016-09-01

    Angle resolved x-ray photoelectron spectroscopy (ARXPS) has been employed to determine non-destructively the in-depth interface formation during thin film growth. Buried interfaces underneath the nanometer thick layers are probed by identifying the chemical shift of compound materials in photoelectron spectroscopy and using the angular response to quantify the compound amounts from the measured intensities. The thin interfaces in molybdenum-silicon multilayers grown at ambient temperature are investigated. This system is an example of an almost perfect 1D-system, where the interface region is only a small part of the individual layer thicknesses of 3 to 5 nm. Despite the low growth temperature, both the interfaces of this multilayer show layer thickness dependent interface formation. While the silicon-on-molybdenum interface shows a limited interface thickness of 0.4 nm of Mo5Si3, the molybdenum-on-silicon interface shows a more complex evolution. For this interface, the composition of the first 2.0 nm of deposited layer thickness is best described as a molybdenum-silicon compound layer with a molybdenum rich top and a MoSi2 bottom layer. After 2.5 nm of the deposited layer thickness, the molybdenum rich compound at the top has transformed into polycrystalline molybdenum on top of 1.8 nm MoSi2 at the interface. The formation of the 1.8 nm MoSi2 precedes the formation of polycrystalline molybdenum on top. Angle resolved x-ray photoelectron spectroscopy (ARXPS) is shown to be a good tool to study the interface phenomena beneath the nanometer thick top layers. In the case of Mo/Si multilayer mirrors, this ARXPS study shows that the compound formation at the interface accounts for the majority of the extreme ultraviolet reflectance loss.

  20. Safety of food contact silicone rubber: Liberation of volatile compounds from soothers and teats

    DEFF Research Database (Denmark)

    Lund, Kirsten H.; Petersen, Jens Højslev

    2002-01-01

    The release of volatile compounds from soothers and teats made from silicone rubber has been investigated. Firstly, measurements of the total release of volatiles were performed according to the method in the draft European standard (CEN). Weight losses of 0.17-0.80% after four hours at 200 degre......) detectors. The main compounds were siloxane oligomers and aliphatic hydrocarbons. One teat released about 0.1 mg diethyl phtalate (DEP), which is considered to be quite a high quantity. Limited amounts of the antioxidant 3,5-di-t-butyl-4-hydroxytoluene (BHT) were found in most samples....

  1. Reactivity of silicon and germanium doped CNTs toward aromatic sulfur compounds: A theoretical approach

    Energy Technology Data Exchange (ETDEWEB)

    Galano, Annia [Departamento de Quimica, Universidad Autonoma Metropolitana-Iztapalapa, San Rafael Atlixco 186, Col. Vicentina. Iztapalapa, C.P. 09340 Mexico D.F. (Mexico); Instituto Mexicano del Petroleo, Eje Central Lazaro Cardenas 152, 07730 Mexico D.F. (Mexico)], E-mail: agalano@prodigy.net.mx; Francisco-Marquez, Misaela [Departamento de Quimica, Universidad Autonoma Metropolitana-Iztapalapa, San Rafael Atlixco 186, Col. Vicentina. Iztapalapa, C.P. 09340 Mexico D.F. (Mexico); Instituto Mexicano del Petroleo, Eje Central Lazaro Cardenas 152, 07730 Mexico D.F. (Mexico)

    2008-04-03

    Adsorption processes of thiophene and benzothiophene on pristine carbon nanotubes (CNTs), and on CNTs doped with Si or Ge, have been modeled with Density Functional. This is the first study on the chemical reactivity of such doped tubes. The calculated data suggest that the presence of silicon or germanium atoms in CNTs increases their reactivity toward thiophene, and benzothiophene. The adsorption of these species on pristine CNTs seems very unlikely to occur, while the addition products involving doped CNTs were found to be very stable, with respect to the isolated reactants, in terms of Gibbs free energy. Several of these adsorption processes were found to be significantly exergonic ({delta}G < 0) in non-polar liquid phase. The results reported in this work suggest that Si and Ge defects on CNTs increase their reactivity toward unsaturated species, and could make them useful in the removal processes of aromatic sulfur compounds from oil-hydrocarbons. However, according to our results, CNTs doped with Si atoms are expected to be more efficient as aromatic sulfur compounds scavengers than those doped with Ge. These results also suggest that the presence of silicon and germanium atoms in the CNTs structures enhances their reactivity toward nucleophilic molecules, compared to pristine carbon nanotubes.

  2. Organic silicon compounds anf hydrogen sulfide removal from biogas by mineral and adsorbent

    Science.gov (United States)

    Choi, J.

    2015-12-01

    Biogas utilized for energy production needs to be free from organic silicon compounds and hydrogen sulfide , as their burning has damaging effects on utilities and humans; organic silicon compounds and hydrogen sulfide can be found in biogas produced from biomass wastes, due to their massive industrial use in synthetic product,such as cosmetics, detergents and paints.Siloxanes and hydrogen sulfide removal from biogas can be carried out by various methods (Ajhar et al., 2010); aim of the present work is to find a single practical andeconomic way to drastically and simultaneously reduce both hydrogen sulfide and the siloxanes concentration to less than 1 ppm. Some commercial activated carbons previously selected (Monteleoneet al., 2011) as being effective in hydrogen sulfide up taking have been tested in an adsorption measurement apparatus, by flowing both hydrogen sulphide and volatile siloxane (Decamethycyclopentasiloxane or D5) in a nitrogen stream,typically 25-300 ppm D5 over N2, through an clay minerals, Fe oxides and Silica; the adsorption process was analyzed by varying some experimental parameters (concentration, grain size, bed height). The best silica shows an adsorption capacity of 0.2 g D5 per gram of silica. The next thermo gravimetric analysis (TGA) confirms the capacity data obtained experimentally by the breakthrough curve tests.The capacity results depend on D5 and hydrogen sulphide concentrations. A regenerative silica process is then carried out byheating the silica bed up to 200 ° C and flushing out the adsorbed D5 and hydrogen sulphide samples in a nitrogen stream in athree step heating procedure up to 200 ° C. The adsorption capacity is observed to degrade after cyclingthe samples through several adsorption-desorption cycles.

  3. Hexacoordinate Silicon Compounds with a Dianionic Tetradentate (N,N′,N′,N-Chelating Ligand

    Directory of Open Access Journals (Sweden)

    Daniela Gerlach

    2016-04-01

    Full Text Available In the context of our systematic investigations of penta- and hexacoordinate silicon compounds, which included dianionic tri- (O,N,O′; O,N,N′ and tetradentate (O,N,N,O; O,N,N′,O′ chelators, we have now explored silicon coordination chemistry with a dianionic tetradentate (N,N′,N′,N chelator. The ligand [o-phenylene-bis(pyrrole-2-carbaldimine, H2L] was obtained by condensation of o-phenylenediamine and pyrrole-2-carbaldehyde and subsequently silylated with chlorotrimethylsilane/triethylamine. Transsilylation of this ligand precursor (Me3Si2L with chlorosilanes SiCl4, PhSiCl3, Ph2SiCl2, (Anis2SiCl2 and (4-Me2N-C6H4PhSiCl2 afforded the hexacoordinate Si complexes LSiCl2, LSiPhCl, LSiPh2, LSi(Anis2 and LSiPh(4-Me2N-C6H4, respectively (Anis = anisyl = 4-methoxyphenyl. 29Si NMR spectroscopy and, for LSiPh2, LSi(Anis2 and LSiPh(4-Me2N-C6H4, single-crystal X-ray diffraction confirm hexacoordination of the Si atoms. The molecular structures of LSiCl2 and LSiPhCl were elucidated by computational methods. Despite the two different N donor sites (pyrrole N, X-type donor; imine N, L-type donor, charge delocalization within the ligand backbone results in compounds with four similar Si–N bonds. Charge distribution within the whole molecules was analyzed by calculating the Natural Charges (NCs. Although these five compounds carry electronically different monodentate substituents, their constituents reveal rather narrow ranges of their charges (Si atoms: +2.10–+2.22; monodentate substituents: −0.54–−0.56; L2−: −1.02–−1.11.

  4. Effect of chain length on the sensing of volatile organic compounds by means of silicon nanowires.

    Science.gov (United States)

    Wang, Bin; Haick, Hossam

    2013-06-26

    Molecularly modified silicon nanowire field effect transistors (SiNW FETs) are starting to appear as promising devices for sensing various volatile organic compounds (VOCs). Understanding the connection between the molecular layer structure attached to the SiNWs and VOCs is essential for the design of high performance sensors. Here, we explore the chain length influence of molecular layers on the sensing performance to polar and nonpolar VOCs. SiNW FETs were functionalized with molecular layers that have similar end (methyl) group and amide bridge bond, but differ in their alkyl chain lengths. The resulting devices were then exposed to polar and nonpolar VOCs in various concentrations. Our results showed that the sensing response to changing the threshold voltage (ΔVth) and changing the relative hole mobility (Δμh/μh-a) have a proportional relationship to the VOC concentration. On exposure to a specific VOC concentration, ΔVth response increased with the chain length of the molecular modification. In contrast, Δμh/μh-a did not exhibit any obvious reliance on the chain length of the molecular layer. Analysis of the responses with an electrostatic-based model suggests that the sensor response in ΔVth is dependent on the VOC concentration, VOC vapor pressure, VOC-molecular layer binding energy, and VOC adsorption-induced dipole moment changes of molecular layer.

  5. Enhanced sensing of nonpolar volatile organic compounds by silicon nanowire field effect transistors.

    Science.gov (United States)

    Paska, Yair; Stelzner, Thomas; Christiansen, Silke; Haick, Hossam

    2011-07-26

    Silicon nanowire field effect transistors (Si NW FETs) are emerging as powerful sensors for direct detection of biological and chemical species. However, the low sensitivity of the Si NW FET sensors toward nonpolar volatile organic compounds (VOCs) is problematic for many applications. In this study, we show that modifying Si NW FETs with a silane monolayer having a low fraction of Si-O-Si bonds between the adjacent molecules greatly enhances the sensitivity toward nonpolar VOCs. This can be explained in terms of an indirect sensor-VOC interaction, whereby the nonpolar VOC molecules induce conformational changes in the organic monolayer, affecting (i) the dielectric constant and/or effective dipole moment of the organic monolayer and/or (ii) the density of charged surface states at the SiO(2)/monolayer interface. In contrast, polar VOCs are sensed directly via VOC-induced changes in the Si NW charge carriers, most probably due to electrostatic interaction between the Si NW and polar VOCs. A semiempirical model for the VOC-induced conductivity changes in the Si NW FETs is presented and discussed.

  6. Toxic Compounds in Our Food: Arsenic Uptake By Rice and Potential Mitigation By Silicon

    Science.gov (United States)

    Seyfferth, A.; Gill, R.; Penido, E.

    2014-12-01

    Arsenic is a ubiquitous element in soils worldwide and has the potential to negatively impact human and ecosystem health under certain biogeochemical conditions. While arsenic is relatively immobile in most oxidized soils due to a high affinity for soil solids, arsenic becomes mobilized under reduced soil conditions due to the reductive dissolution of iron(III) oxides thereby releasing soil-bound arsenic. Since arsenic is a well-known carcinogen, this plant-soil process has the potential to negatively impact the lives of billions of rice consumers worldwide upon plant uptake and grain storage of released arsenic. Moreover, arsenic uptake by rice is excacerbated by the use of As-laden groundwater for rice irrigation. One proposed strategy to decrease arsenic uptake by rice plants is via an increase in dissolved silicon in paddy soil solution (pore-water), since silicic acid and arsenous acid share an uptake pathway. However, several soil processes that influence arsenic cycling may be affected by silicon including desorption from bulk soil, formation and mineralogy of iron(III) oxide plaque, and adsorption/desorption onto/from iron plaque; the effect of silicon on these soil processes will ultimately dictate the effectiveness of altered dissolved silicon in decreasing arsenic uptake at the root, which in turn dictates the concentration of arsenic found in grains. Furthermore, the source of silicon may impact carbon cycling and, in particular, methane emissions. Here, impacts of altered dissolved silicon on processes that affect rhizospheric biogeochemical cycling of arsenic and subsequent plant-uptake, and how it influences other biogeochemical cycles such as carbon and iron are investigated. We show that silicon can decrease arsenic uptake and grain storage under certain conditions, and that altered silicon affects the type of iron (III) oxide that comprises iron plaque.

  7. Calibration of Silicone Rubber Passive Samplers: Experimental and Modeled Relations between Sampling Rate and Compound Properties

    NARCIS (Netherlands)

    Rusina, T.P.; Smedes, F.; Koblizkova, M.; Klanova, J.

    2010-01-01

    Sampling rates (R-s) for silicone rubber (SR) passive samplers were measured under two different hydrodynamic conditions. Concentrations were maintained in the aqueous phase by continuous equilibration with SR sheets of a large total surface area which had been spiked with polycyclic aromatic hydroc

  8. Discovery and synthetic applications of novel silicon-carbon bond cleavage reactions based on the coordination number change of organosilicon compounds

    OpenAIRE

    Tamao, Kohei

    2008-01-01

    Some synthetically useful transformations of organosilicon compounds have been developed since the mid 1970s, based on the new concept that the silicon-carbon bonds are activated toward electrophilic cleavage via the formation of penta- and hexa-coordinate species. This review mainly consists of the following aspects: (1) a general concept for the activation of the silicon-carbon bond via penta- and hexa-coordinate species, (2) synthetic application of hexa-coordinate organopentafluorosilicat...

  9. EFFECTS OF SOME PHENYLETHYNYLSILICON COMPOUNDS ON HEAT-CURABLE SILICONE RUBBER Ⅲ 1,1,3,3-TETRAMETHYL- 1,3-DIPHENYLETHYNYL-DISILOXANE

    Institute of Scientific and Technical Information of China (English)

    FENG Shengyu; YU Shuqi; LI Shijun; ZHANG Shengyou; CHEN Jianhua; DU Zuodong

    1995-01-01

    We have shown that some phenylethynylsilicon compounds are good cure crosslinkers of heat-curable silicone rubber(HCSR). In this paper the effects of 1,1,3,3-tetramethyl1,3-diphenylethynyldisiloxane (TMDPDS) as a crosslinker on HCSR were studied. The vulcanizates with fine mechanical properties could be obtained with suitable amounts of TMDPDS. Sol fractions, and crosslinking density of vulcanizates and vulcanization retardation effect of TMDPDS on hydrosilation curing silicone rubber were also discussed.

  10. Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

    Science.gov (United States)

    Oulachgar, El Hassane

    . This work has demonstrated that a polysilane polymeric source can be used to deposit a wide range of thin film materials exhibiting similar properties with conventional ceramic materials such as silicon carbide (SiC), silicon oxynitride (SiON), silicon oxycarbide (SiOC) silicon dioxide (SiO2) and silicon nitride (Si3N4). The strict control of the deposition process allows precise control of the electrical, optical and chemical properties of polymer-based thin films within a broad range. This work has also demonstrated for the first time that poly(dimethylsilmaes) polymers deposited by CVD can be used to effectively passivate both silicon and gallium arsenide MOS devices. This finding makes polymer-based thin films obtained by CVD very promising for the development of high-kappa dielectric materials for next generation high-mobility CMOS technology. Keywords. Thin films, Polymers, Vapor Phase Deposition, CVD, Nanodielectrics, Organosilanes, Polysilanes, GaAs Passivation, MOSFET, Silicon Oxynitride, Integrated Waveguide, Silicon Carbide, Compound Semiconductors.

  11. 有机硅高沸物制备硅油脱模剂的研究进展%Progress on Silicone Oil Mold-release Agent by Silicone High-boiling Compound

    Institute of Scientific and Technical Information of China (English)

    王宇光; 王晓英; 刘颖

    2013-01-01

    简述了有机硅高沸物制备硅油脱模剂的原理及流程,介绍了近年来有机硅高沸物制备硅油脱模剂的研究进展,并对国内有机硅高沸物制备硅油脱模剂的发展方向提出了建议.%This paper described the principles and processes of silicone oil mold-release agent preparation by high-boiling point organic silicon compounds, and introduced research reviews on the preparation of silicone oil mold-release agent, and some suggestions on development direction of silicone oil mold-release agent were proposed.

  12. Elastic and Thermal Properties of Silicon Compounds from First-Principles Calculations

    Science.gov (United States)

    Hou, Haijun; Zhu, H. J.; Cheng, W. H.; Xie, L. H.

    2016-07-01

    The structural and elastic properties of V-Si (V3Si, VSi2, V5Si3, and V6Si5) compounds are studied by using first-principles method. The calculated equilibrium lattice parameters and formation enthalpy are in good agreement with the available experimental data and other theoretical results. The calculated results indicate that the V-Si compounds are mechanically stable. Elastic properties including bulk modulus, shear modulus, Young's modulus, and Poisson's ratio are also obtained. The elastic anisotropies of V-Si compounds are investigated via the three-dimensional (3D) figures of directional dependences of reciprocals of Young's modulus. Finally, based on the quasi-harmonic Debye model, the internal energy, Helmholtz free energy, entropy, heat capacity, thermal expansion coefficient, Grüneisen parameter, and Debye temperature of V-Si compounds have been calculated.

  13. Elastic and thermal properties of silicon compounds from first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Haijun; Zhu, H.J. [Yancheng Institute of Technology (China). School of Materials Engineering; Cheng, W.H. [Yancheng Institute of Technology (China). Dept. of Light Chemical Engineering; Xie, L.H. [Sichuan Normal Univ., Chengdu (China). Inst. of Solid State Physics and School of Physics and Electronic Engineering

    2016-11-01

    The structural and elastic properties of V-Si (V{sub 3}Si, VSi{sub 2}, V{sub 5}Si{sub 3}, and V{sub 6}Si{sub 5}) compounds are studied by using first-principles method. The calculated equilibrium lattice parameters and formation enthalpy are in good agreement with the available experimental data and other theoretical results. The calculated results indicate that the V-Si compounds are mechanically stable. Elastic properties including bulk modulus, shear modulus, Young's modulus, and Poisson's ratio are also obtained. The elastic anisotropies of V-Si compounds are investigated via the three-dimensional (3D) figures of directional dependences of reciprocals of Young's modulus. Finally, based on the quasi-harmonic Debye model, the internal energy, Helmholtz free energy, entropy, heat capacity, thermal expansion coefficient, Grueneisen parameter, and Debye temperature of V-Si compounds have been calculated.

  14. Thermal properties study on the ablation materials of inorganic silicon compound from organosilicone in high percent conversion

    Institute of Scientific and Technical Information of China (English)

    CUI MengZhong; WANG WenHua

    2007-01-01

    The new type of silicone rubber prepared by organosilicon polymer containing special groups presents the tensile strength of 3.92 MPa and the elongation at break of 285%. Compared with Sylgard(r)184 silicone rubber (Dow Corning Corporation), it has better high temperature resistance and almost no weightlessness from room temperature to 430℃. Thermogravimetric analysis was conducted to research the thermal degradation at different temperatures and the heat pyrolysis products were trace determined by FT-IR. The results show that with the increase of temperature, the organic groups of products are gradually decomposed. Organosilicon rubber is gradually changed into the typical inorganic SiCO compounds in the process of pyrolysis. Elemental analysis and X-ray photoelectron spectroscopy results show that the pyrolyzates are mainly composed of Si, C and O elements above 1050℃. X-ray diffraction analysis showes that partial β-SiC crystal structure is brought about gradually from the pyrolysis products at 1050℃ to 1500℃ under nitrogen atmosphere. With the treatment temperature rising, the crystallinity of SiC and cristobalite obviously increases.

  15. Substitution reactions on a hypercoordinated main-group element encapsulated in a pentacapped trigonal prismatic copper cage.

    Science.gov (United States)

    Li, Bing; Liao, Jian-Hong; Tang, Hao-Tsan; Li, Yi-Juan; Liu, C W

    2013-10-28

    Compound 1, [Cu11(μ9-Br)(μ3-Br)3{S2P(O(i)Pr)2}6](+), containing the first μ9-bromide at the center of a pentacapped trigonal-prismatic copper skeleton, was isolated from the reaction of [Cu(CH3CN)4](PF6), NH4[S2P(O(i)Pr)2], and Bu4NBr in 11:6:4 ratios in methanol. Treatment of 1 with Bu4NI resulted in a complete replacement of four bromides to yield a corresponding iodo analogue {Cu11(I)(I)3[S2P(O(i)Pr)2]6}(+), 2. The central bromide and iodide in 1 and 2 can be replaced by a sulfide generated in situ from Na2S2O3 to produce [Cu11(μ9-S)(μ3-X)3{S2P(O(i)Pr)2}6] (X = Br, 3; I, 4). All four compounds displayed interesting photoluminescent properties.

  16. First-principles study of the nickel–silicon binary compounds under pressure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yuhong, E-mail: zyh388@sina.com [College of Materials Science and Engineering, North University of China, Taiyuan 030051 (China); Hou, Hua [College of Materials Science and Engineering, North University of China, Taiyuan 030051 (China); Zhao, Yuhui [Department of Mechanical and Electronic Engineering, Hebei College of Industry and Technology, Shijiazhuang 050091 (China); Han, Peide [College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2015-08-15

    Highlights: • The structural and elastic properties of Ni–Si system under pressure are firstly studied. • The lattice parameters of NiSi{sub 2} are the most sensitive to external pressure change. • Ni{sub 3}Si, Ni{sub 31}Si{sub 12}, Ni{sub 2}Si (δ) and Ni{sub 3}Si{sub 2} are mechanical stability with pressure up to 50 GPa. • The hardness of the four compounds can be improved by increasing pressure. • Electronic structures are analyzed to understand pressure effect on the seven compounds. - Abstract: The effects of high pressure on structural, stable, elastic, thermodynamic properties and electronic structures of Ni–Si binary compounds (i.e. β-Ni{sub 3}Si, γ-Ni{sub 31}Si{sub 12}, δ-Ni{sub 2}Si, θ-Ni{sub 2}Si, ε-Ni{sub 3}Si{sub 2}, ε-NiSi and α-NiSi{sub 2}) have been firstly studied by first-principles calculation based on density functional theory method within generalized gradient approximation. The calculated lattice parameters of the seven compounds at zero pressure and zero temperature agree well with the available experimental values and previous theoretical data. The values of V/V{sub 0} decrease with pressure going up to 50 GPa and the rate of change decrease gradually. The lattice parameters of NiSi{sub 2} are the most sensitive to external pressure change. Ni{sub 3}Si, Ni{sub 31}Si{sub 12}, Ni{sub 2}Si (δ) and Ni{sub 3}Si{sub 2} are mechanical stability by estimating stability criteria with pressure ranging from 0 to 50 GPa. But Ni{sub 2}Si (θ), NiSi and NiSi{sub 2} are not mechanically stable with pressure up to 10, 40 and 30 GPa, respectively. The calculated results of bulk modulus B, shear modulus G and Young’s modulus E illustrate pressure can improve the hardness of Ni{sub 3}Si, Ni{sub 31}Si{sub 12}, Ni{sub 2}Si (δ) and Ni{sub 3}Si{sub 2} compounds. In addition, ratio of shear modulus to bulk modulus G/B shows that all the considered compounds are ductile materials except NiSi. The Debye temperature Θ{sub D} of Ni{sub 3}Si

  17. Polar intermetallic compounds of the silicon and arsenic family elements and their ternary hydrides and fluorides

    Energy Technology Data Exchange (ETDEWEB)

    Leon-Escamilla, E.A.

    1996-10-17

    An investigation has been made on the effects of hydrogen and fluoride in the solid state chemistry of alkaline-earth and divalent rare-earth metal pnictide (Pn) and tetrelide (Tt) phases A{sub 5}(Pn,Tt,){sub 3}Z{sub x}, where A = Ca, Sr, Ba, Sm, Eu, Yb; Pn = As, Sb, Bi; Tt = Si, Ge, Sn, Pb and Z = H, F. Several trivalent rare-earth-metal pnictides, RE{sub 5}Pn{sub 3} (RE = Y, La, Gd, Tb, Dy, Ho, Er, Tm) and alkaline-earth-metal trielides, A{sub 5}Tr{sub 3}Z{sub x} (Tr = Ga, In, Tl) have been included in an effort to complete observed structural trends. Two main experimental techniques were followed throughout this work, (a) reactions in absence of hydrogen or under continuous high vacuum, and (b) reactions with binary metal hydrides, AH{sub x}, in closed containers. The results demonstrate that all the phases reported with the {beta}-Yb{sub 5}Sb{sub 3}-type structure in the A{sub 5}Pn{sub 3} systems are hydrogen-stabilized compounds. Reactions in absence of hydrogen lead to compounds with the Mn{sub 5}Si{sub 3}-type structure. The structure type {beta}-Yb{sub 5}Sb{sub 3} (= Ca{sub 5}SB{sub 3}F) was found to be characteristic of ternary systems and inaccurately associated with phases that form in the Y{sub 5}Bi{sub 3}-type. A new series of isomorphous Zintl compounds with the Ca{sub 16}Sb{sub 11}-type structure were prepared and studied as well. All the alkaline-earth-metal tetrelides, A{sub 5}Tt{sub 3}, that crystallize in the Cr{sub 5}B{sub 3}-type structure can be interstitially derivatized by hydrogen or fluoride. Binary and ternary compounds were characterized by Guinier powder patterns, single crystal X-ray and powder neutron diffraction techniques. In an effort to establish property-structure relationships, electrical resistivity and magnetic measurements were performed on selected systems, and the results were explained in terms of the Zintl concepts, aided by extended Hueckel band calculations.

  18. Reaction of porous silicon with both end-functionalized organic compounds bearing alpha-bromo and omega-carboxy groups for immobilization of biomolecules.

    Science.gov (United States)

    Guo, Dong-Jie; Xiao, Shou-Jun; Xia, Bing; Wei, Shuai; Pei, Jia; Pan, Yi; You, Xiao-Zeng; Gu, Zhong-Ze; Lu, Zuhong

    2005-11-03

    Both end-functionalized (alpha-bromo and omega-carboxy) compounds were first tested for the radical reaction on the silicon-hydride (Si-H) terminated porous silicon (PSi) with/without the presence of diacyl peroxide initiator under microwave irradiation. Then the carboxylic acid monolayers (CAMs) assembled on PSi through the robust Si-C bonds were converted to amino-reactive linker, N-hydroxysuccinimide (NHS)-ester, terminated monolayers. And finally two proteins of bovine serum albumin (BSA) and lysozyme (Lys) were immobilized through amide bonds. The optimum PSi membrane for protein immobilization without collapse, with parameters of porous radii 4-10 nm and depth 0.2-4.6 mum, was prepared from the (100)-oriented p-type silicon wafer. The chemically converted surface products were monitored with Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM).

  19. Structural, elastic, and electronic properties of sodium atoms encapsulated type-I silicon-clathrate compound under high pressure

    Institute of Scientific and Technical Information of China (English)

    张伟; 陈青云; 曾召益; 蔡灵仓

    2015-01-01

    We calculated the structural, elastic, and electronic properties of alkali metal Na atoms doped type-I silicon–clathrate compound (Na8Si46) under pressure using first-principles methods. The obtained dependencies of bond lengths and bond angles on pressure show heterogeneous behaviors which may bring out a structural transition. By using the elastic stability criteria from the calculated elastic constants, we confirm that the Na8Si46 is elastically unstable under high pressure. Some of the mechanical and thermal quantities include bulk modulus, shear modulus ,Young’s modulus, Debye temperature, sound velocity, melting point, and hardness, which are also derived from the elastic constants. The calculated total and partial electron densities of states of Na8Si46 indicate a weak interaction between the encapsulated Na atoms and the silicon framework. Moreover, the effect of pressure on its electronic structure is also investigated, which suggests that pressure is not a good choice to enhance the thermoelectricity performance of Na8Si46.

  20. Silaphenolates and Silaphenylthiolates: Two Unexplored Unsaturated Silicon Compound Classes Influenced by Aromaticity

    Directory of Open Access Journals (Sweden)

    Henrik Ottosson

    2012-01-01

    Full Text Available Monosilicon analogs of phenolates and phenylthiolates are studied by quantum chemical calculations. Three different silaphenolates and three different silaphenylthiolates are possible; the ortho-, meta-, and para-isomers. For the silaphenolates, the meta-isomer is the thermodynamically most stable, regardless if the substituent R at Si is H, t-Bu or SiMe3. However, with R = H and SiMe3 the energy differences between the three isomers are small, whereas with R = t-Bu the meta-isomer is ~5 kcal/mol more stable than the ortho-isomer. For the silaphenylthiolates the ortho-isomer is of lowest energy, although with R = H the ortho- and meta-isomers are isoenergetic. The calculated nucleus independent chemical shifts (NICS indicate that the silaphenolates and silaphenylthiolates are influenced by aromaticity, but they are less aromatic than the parent silabenzene. The geometries and charge distributions suggest that all silaphenolates and silaphenylthiolates to substantial degrees are described by resonance structures with an exocyclic C=O double bond and a silapentadienyl anionic segment. Indeed, they resemble the all-carbon phenolate and phenylthiolate. Silaphenylthiolates are less bond alternate and have slightly more negative NICS values than analogous silaphenolates, suggesting that this compound class is a bit more aromatic. Dimerization of the silaphenolates and silaphenylthiolates is hampered due to intramolecular Coulomb repulsion in the dimers, and silaphenolates with a moderately bulky SiMe3 group as substituent at Si should prefer the monomeric form.

  1. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  2. Enhanced plasmid loss in bacterial populations exposed to the antimicrobial compound irgasan delivered from interpenetrating polymer network silicone hydrogels

    DEFF Research Database (Denmark)

    Riber, Leise; Burmølle, Mette; Alm, Martin;

    2016-01-01

    into liquid growth medium from irgasan-impregnated Interpenetrating Polymer Network (IPN) silicone hydrogel objects, a novel technology developed as drug-delivery platform. IPN-mediated irgasan-release was indirectly monitored as the extent of plasmid loss from bacterial cells during a 24-hour period...

  3. Modeling of growth and prediction of properties of electronic nanomaterials: Silicon thin films and compound semiconductor quantum dots

    Science.gov (United States)

    Pandey, Sumeet C.

    The enhanced functionality and tunability of electronic nanomaterials enables the development of next-generation photovoltaic, optoelectronic, and electronic devices, as well as biomolecular tags. Design and efficient synthesis of such semiconductor nanomaterials require a fundamental understanding of the underlying process-structure/composition-property-function relationships. To this end, this thesis focuses on a systematic, comprehensive analysis of the physical and chemical phenomena that determine the composition and properties of semiconductor nanomaterials. Through synergistic combination of computational modeling and experimental studies, the thesis addresses the thermodynamics and kinetics that are relevant during synthesis and processing and their resulting impact on the properties of silicon thin films and ternary quantum dots (TQDs) of compound semiconductors. The thesis presents a computational study of the growth mechanisms of plasma deposited a-Si:H thin films based on kinetic Monte Carlo (KMC) simulations according to a transition probability database constructed by first-principles density functional theory (DFT) calculations. Based on the results, a comprehensive model is proposed for a-Si:H thin-film growth by plasma deposition under conditions that make the silyl (SiH3) radical the dominant deposition precursor. It is found that the relative roles of surface coordination defects are crucial in determining the surface composition of plasma deposited a-Si:H films and should be properly accounted for. The KMC predictions for the temperature dependence (over the range from 300 K to 700 K) of the surface concentration of SiHx(s) (x = 1,2,3) surface hydride species, the surface hydrogen content, and the surface dangling-bond coverage are in agreement with experimental measurements. In addition, the thesis details a systematic analysis of equilibrium compositional distribution in TQDs and their effects on the electronic and optoelectronic properties

  4. Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

    Science.gov (United States)

    Vandersande, Jan W. (Inventor); Wood, Charles (Inventor); Draper, Susan L. (Inventor)

    1989-01-01

    The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

  5. Development of alternate silicone potting compounds. Volume 8. Development of an alternate substitute for Dow Corning aerospace sealant DC93-122 based on Sylgard 184 and dielectric gel Q3-6527

    Energy Technology Data Exchange (ETDEWEB)

    Cady, W.E.; Buckner, A.T.

    1981-02-09

    A second substitute was formulated for Dow Corning DC93-122 silicone potting compound because the first substitute proved so strong and hard. The second substitute was made weaker by substituting Sylgard 184 for Sylgard 186 and by adding dielectric gel Q3-6527. Accelerator QCF3-6559, DC1107 fluid, and Cabosil Grade MS75 silicon dioxide were still required. To reduce the porosity of the potting, the amount of DC1107 fluid in the formulation was minimized, which required adding a relatively large amount of accelerator (as was done in the first substitute). Dielectric gel Q3-6527 used alone required considerably less silicon dioxide to achieve a non-flow state than did Sylgard 184 or any of its blends with Q3-6527.

  6. Fit of fluxes of sunscreens and other compounds from propylene glycol:water (30:70) through human skin and silicone membrane to the Roberts-Sloan equation: the effect of polar vehicle (or water) solubility.

    Science.gov (United States)

    Sloan, Kenneth B; Devarajan-Ketha, Hemamalini; Synovec, Jennifer; Majumdar, Susruta

    2013-01-01

    It would be useful to develop a surrogate for animal skin, which could be use to predict flux through human skin. The fluxes (and physicochemical properties) of sunscreens and other compounds from propylene glycol (PG):water (AQ), 30:70, through human skin have previously been reported. We measured the fluxes of several of those sunscreens and other compounds from PG:AQ, 30:70, through silicone membrane and fit both sets of data to the Roberts-Sloan (RS) equation to determine any similarities. For both sets of data, the fluxes were directly dependent on their solubilities in a lipid solvent [octanol (OCT), in this case] and in a polar solvent (PG:AQ, 30:70, or AQ in this case) and inversely on their molecular weights. The fit of the experimental (EXP) fluxes through human skin in vivo to RS was excellent: r² = 0.92 if the vehicle (VEH) PG:AQ, 30:70 was the polar solvent (RS¹) or r² = 0.97 if water was the polar solvent (RS²). The fit of the EXP fluxes through silicone membrane to RS was good: r² = 0.80 if the VEH PG:AQ, 30:70, was the polar solvent (RS¹) or r² = 0.81 if water was the polar solvent (RS²). The correlations between their EXP fluxes through human skin in vivo and their EXP fluxes through silicone membrane were good (r² = 0.85). In addition, the correlation between EXP fluxes from PG:AQ, 30:70, through human skin in vivo and their fluxes calculated from the coefficients of the fit of solubilities, molecular weights and fluxes from water through silicone membranes from a previous n = 22 database to RS was even better (r² = 0.94). These results suggest that flux through human skin can be calculated from flux through a silicone membrane.

  7. K- and L-edge X-ray absorption spectrum calculations of closed-shell carbon, silicon, germanium, and sulfur compounds using damped four-component density functional response theory.

    Science.gov (United States)

    Fransson, Thomas; Burdakova, Daria; Norman, Patrick

    2016-05-21

    X-ray absorption spectra of carbon, silicon, germanium, and sulfur compounds have been investigated by means of damped four-component density functional response theory. It is demonstrated that a reliable description of relativistic effects is obtained at both K- and L-edges. Notably, an excellent agreement with experimental results is obtained for L2,3-spectra-with spin-orbit effects well accounted for-also in cases when the experimental intensity ratio deviates from the statistical one of 2 : 1. The theoretical results are consistent with calculations using standard response theory as well as recently reported real-time propagation methods in time-dependent density functional theory, and the virtues of different approaches are discussed. As compared to silane and silicon tetrachloride, an anomalous error in the absolute energy is reported for the L2,3-spectrum of silicon tetrafluoride, amounting to an additional spectral shift of ∼1 eV. This anomaly is also observed for other exchange-correlation functionals, but it is seen neither at other silicon edges nor at the carbon K-edge of fluorine derivatives of ethene. Considering the series of molecules SiH4-XFX with X = 1, 2, 3, 4, a gradual divergence from interpolated experimental ionization potentials is observed at the level of Kohn-Sham density functional theory (DFT), and to a smaller extent with the use of Hartree-Fock. This anomalous error is thus attributed partly to difficulties in correctly emulating the electronic structure effects imposed by the very electronegative fluorines, and partly due to inconsistencies in the spurious electron self-repulsion in DFT. Substitution with one, or possibly two, fluorine atoms is estimated to yield small enough errors to allow for reliable interpretations and predictions of L2,3-spectra of more complex and extended silicon-based systems.

  8. Stabilization of elusive silicon oxides.

    Science.gov (United States)

    Wang, Yuzhong; Chen, Mingwei; Xie, Yaoming; Wei, Pingrong; Schaefer, Henry F; Schleyer, Paul von R; Robinson, Gregory H

    2015-06-01

    Molecular SiO2 and other simple silicon oxides have remained elusive despite the indispensable use of silicon dioxide materials in advanced electronic devices. Owing to the great reactivity of silicon-oxygen double bonds, as well as the low oxidation state of silicon atoms, the chemistry of simple silicon oxides is essentially unknown. We now report that the soluble disilicon compound, L:Si=Si:L (where L: = :C{N(2,6-(i)Pr2C6H3)CH}2), can be directly oxidized by N2O and O2 to give the carbene-stabilized Si2O3 and Si2O4 moieties, respectively. The nature of the silicon oxide units in these compounds is probed by spectroscopic methods, complementary computations and single-crystal X-ray diffraction.

  9. Microstructure of SiC-Si-Al2O3 composites derived from silicone resin - metal aluminum filler compounds by low temperature reduction process

    Science.gov (United States)

    Narisawa, M.; Abe, Y.

    2011-06-01

    Concentrated slurry of a silicone resin with low carbon content, 3 μm aluminum particles and ethanol were prepared. After casting, addition of cross-linking agent and drying, silicone resin-aluminum composite with thick sheet form was obtained. The prepared sheet was heat-treated at 933 or 1073K with various holding times to characterize formed phases during the heat treatments. XRD patterns and FT-IR spectra revealed free Si formation and existence of Si-O-Si bond at 933K. The Si-O-Si bond, however, disappeared and silicon carbide was formed at 1073K. SEM observation indicated formation of cracks bridged with a number of tiny struts at 933K and conversion to wholly porous structure at 1073K.

  10. Silicon applications in photonics

    Science.gov (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  11. High-pressure synthesis and structural characterization of the type II clathrate compound Na(30.5)Si(136) encapsulating two sodium atoms in the same silicon polyhedral cages.

    Science.gov (United States)

    Yamanaka, Shoji; Komatsu, Masaya; Tanaka, Masashi; Sawa, Hiroshi; Inumaru, Kei

    2014-05-28

    Single crystals of sodium containing silicon clathrate compounds Na8Si46 (type I) and NaxSi136 (type II) were prepared from the mixtures of NaSi and Si under high-pressure and high-temperature conditions of 5 GPa at 600-1000 °C. The type II crystals were obtained at relatively low-temperature conditions of 700-800 °C, which were found to have a Na excess composition Na30.5Si136 in comparison with the compounds NaxSi136 (x ≤ 24) obtained by a thermal decomposition of NaSi under vacuum. The single crystal study revealed that the Na excess type II compound crystallizes in space group Fd3̅m with a lattice parameter of a = 14.796(1) Å, slightly larger than that of the ambient phase (Na24Si136), and the large silicon hexakaidecahedral cages (@Si28) are occupied by two sodium atoms disordered in the two 32e sites around the center of the @Si28 cages. At temperatures primitive cell with space group P213, and the Na atoms in the @Si28 cages are aligned as Na2 pairs. The temperature dependence of the magnetic susceptibility of Na30.5Si136 suggests that the two Na ions (2 Na(+)) in the cage are changed to a Na2 molecule. The Na atoms of Na30.5Si136 can be deintercalated from the cages topochemically by evacuation at elevated temperatures. The single crystal study of the deintercalated phases NaxSi136 (x = 25.5 and 5.5) revealed that only excess Na atoms have disordered arrangements.

  12. 有机硅和EVA对阻燃聚乙烯体系的影响%Effect of organic silicon and EVA on magnesium carbonate and aluminium hydroxide compound with flame-retardant polyethylene system

    Institute of Scientific and Technical Information of China (English)

    吴洁; 李建新

    2011-01-01

    为提高碳酸镁/氢氧化铝复配阻燃聚乙烯体系的性能,将有机硅和EVA添加到阻燃体系中,测量其氧指数、拉伸强度和断裂伸长率.实验表明:有机硅是该体系很好的阻燃协效剂,而用EVA改性基础树脂,不但可以提高体系的阻燃性能,还可以提高体系的断裂伸长率.%To improve the property of Magnesium Carbonate and Aluminium Hydroxide compound with flame-retardant PE system.Organic silicon and EVA were added into the flame-retardant PE system.The Oxygen index, the tensile strength and the elongation at break were tested.The results indicate that organic silicon is the efficient synergistic agent for the flame-retardant system, and base resin modified by EVA has better flame-retardant performance , meanwhile the elongation at break of the system is improved too.

  13. The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon

    Directory of Open Access Journals (Sweden)

    Kulinich O. A.

    2008-10-01

    Full Text Available The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It is shown the influence of initial defects on mechanical stress and deformation distribution in oxidized silicon.

  14. The polymerization of cyclodextrins modified with silicon (Si) and titanium (Ti) based compounds for the removal and degradation of organic contaminants in water

    OpenAIRE

    2010-01-01

    M.Sc. Water that is free from toxic organic pollutants is essential to human health and the environment at large. Organic contaminants may affect the endocrine system of animals and humans, even when present in very low concentrations (i.e. levels ppb). Current technologies fail to remove these organic compounds efficiently from water at ppb levels. So, the development of new technologies that are capable of removing and degrading organic pollutants from water is crucial. Hence, recently i...

  15. Silicon spintronics.

    Science.gov (United States)

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  16. Fabrication of Compound Eye Structures on Silicon by Direct Three-Beam Laser Interference Lithography%三光束激光干涉光刻法制备生物复眼表面微结构

    Institute of Scientific and Technical Information of China (English)

    关会英; 司玉兰; 曹亮; 梁志海

    2015-01-01

    Many excellent performance such as a large field of view,high time resolution,high reflectivity, superhydrophobicity and antifogging properties were found on biological compound eye surfaces continuously. Bionics research shows,the microstructure of compound eye surfaces play a key role in realizing specific function. In this paper,the artificial Ephemera pictiventris McLachlan compound eyes was fabricated via laser lithography technology( LIL)based on three-beam interference on a silicon substrate,and the influence of laser energy and exposure time on the surface morphology was discussed. The results show that laser energy is 40 mJ and the exposure time is 15 s are optimal laser processing parameters for the 20μm feature size.%许多生物复眼表面具有大视场、高时间分辨率、高反射率以及超疏水、防雾等优异性能,工程应用潜力巨大。仿生学研究表明,复眼表面微观结构对其特定功能的实现具有关键作用。本文利用三光束激光干涉光刻技术在单晶硅基底表面制备了仿腹色蜉复眼表面微结构,并讨论了激光能量及曝光时间对加工表面形貌的影响,从而获得了20μm特征尺寸下最优激光加工工艺参数为激光能量为40 mJ,曝光时间为15 s为最优试验条件。

  17. Vinyl ether silicones

    Energy Technology Data Exchange (ETDEWEB)

    Herzig, C.; Dauth, J.; Deubzer, B.; Weis, J. [Wacker-Chemie GmbH, Burghausen (Germany)

    1995-12-01

    Siloxanes with vinyl ether groups are prepared by hydrosilylation reaction of dihydrosiloxanes with divinyl ethers in excess. Different stoichiometry, produces linear copolymers of different viscosities and double bond concentrations always with an active vinyl ether group at each chain end. Polymerisations triggered by UV light were done with mixtures of these compounds and a series of onium salts. Very fast cure is observed even with low doses at 290 nm. V.E. silicones are found to cure essentially quantitative. The comparison with other highly reactive cationic monomers revealed that compounds are among the fastest curing prepolymers in cationic chemistry.

  18. 硅橡胶复合膜渗透蒸发串联阻力扩展模型研究%Extending Model Study for Serial Resistance of Osmosis Evaporation in Compound Membrane of Silicon Rubber

    Institute of Scientific and Technical Information of China (English)

    石尔; 肖泽义; 衣晓青; 黄卫星

    2012-01-01

    Author has introduced the present study situation of the mass transfer of removing the trace organic substance by silicon rubber compound membrane osmosis evaporation at home and abroad; has presented the extending mode/for mass transfer resistance in series used in the silicon rubber com- pound membrane osmosis evaporation; has analyzed the partial resistance in osmosis evaporation process, including the boundary layer of liquid phase, tight skin layer of membrane and effeeting factor for mass transfer resistance of porous supporting layer; has obtained the calculation method to facilitate en- gineering design. Result indicates that this model has the guiding significance for further application/study and optimizing osmosis evaporation process as well.%介绍了国内外硅橡胶复合膜渗透蒸发脱除微量有机物的传质研究现状;提出了硅橡胶复合膜渗透蒸发串联传质阻力扩展模型;分析了渗透蒸发过程各部分传质阻力的影响因素,包括液相边界层、膜的致密皮层、膜的多孔支撑层;得到了便于工程设计的计算方法。结果表明,该模型对进一步的应用研究以及渗透蒸发过程的优化具有指导意义。

  19. Syntheses and studies of organosilicon compounds

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Ren [Iowa State Univ., Ames, IA (United States)

    1999-02-12

    The syntheses of polycarbosilanes and polysilanes as silicon carbide ceramic precursors have been active research areas in the Barton Research Group. In this thesis, the work is focused on the preparation of polycarbosilanes and polysilanes as stoichiometric silicon carbide precursor polymers. The syntheses of the precursor polymers are discussed and the conversions of these precursors to silicon carbide via pyrolysis are reported. The XRD pattern and elemental analyses of the resulting silicon carbide ceramics are presented. Silicon monoxide is an important intermediate in the production of silicon metal. The existence of silicon monoxide in gap phase has been widely accepted. In the second part of this thesis, the generation of gaseous silicon monoxide in four different reactors and the reactions of gaseous silicon monoxide towards organic compounds are discussed.

  20. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  1. High-temperature- and high-pressure-induced formation of the Laves-phase compound XeS2

    Science.gov (United States)

    Yan, Xiaozhen; Chen, Yangmei; Xiang, Shikai; Kuang, Xiaoyu; Bi, Yan; Chen, Haiyan

    2016-06-01

    We explore the reactivity of xenon with sulfur under high pressure, using unbiased structure searching techniques combined with first-principles calculations, which identify a stable XeS2 compound crystallized in a Laves phase with hypercoordinated (16-fold) Xe at 191 GPa and 0 K. Taking the thermal effects into account, we find that increasing the temperature could further stabilize it. The formation of XeS2 is a consequence of pressure-induced charge transfer from Xe to S atoms and the delocalization of Xe 5 p and S 3 p electrons. Meanwhile, the stabilization into a Laves phase of XeS2 is the result of delocalized chemical bonding and the need for optimum structure packing. The present discussion of the formation mechanism in XeS2 is general, and conclusions can be used to understand the formation of other Laves-phase compounds and the Xe chemistry that allows closed-shell Xe to participate in chemical reactions.

  2. Exploring the Nature of Silicon-Noble Gas Bonds in H3SiNgNSi and HSiNgNSi Compounds (Ng = Xe, Rn

    Directory of Open Access Journals (Sweden)

    Sudip Pan

    2015-03-01

    Full Text Available Ab initio and density functional theory-based computations are performed to investigate the structure and stability of H3SiNgNSi and HSiNgNSi compounds (Ng = Xe, Rn. They are thermochemically unstable with respect to the dissociation channel producing Ng and H3SiNSi or HSiNSi. However, they are kinetically stable with respect to this dissociation channel having activation free energy barriers of 19.3 and 23.3 kcal/mol for H3SiXeNSi and H3SiRnNSi, respectively, and 9.2 and 12.8 kcal/mol for HSiXeNSi and HSiRnNSi, respectively. The rest of the possible dissociation channels are endergonic in nature at room temperature for Rn analogues. However, one three-body dissociation channel for H3SiXeNSi and one two-body and one three-body dissociation channels for HSiXeNSi are slightly exergonic in nature at room temperature. They become endergonic at slightly lower temperature. The nature of bonding between Ng and Si/N is analyzed by natural bond order, electron density and energy decomposition analyses. Natural population analysis indicates that they could be best represented as (H3SiNg+(NSi− and (HSiNg+(NSi−. Energy decomposition analysis further reveals that the contribution from the orbital term (ΔEorb is dominant (ca. 67%–75% towards the total attraction energy associated with the Si-Ng bond, whereas the electrostatic term (ΔEelstat contributes the maximum (ca. 66%–68% for the same in the Ng–N bond, implying the covalent nature of the former bond and the ionic nature of the latter.

  3. Electrochemical reactions of organosilicon compounds

    Science.gov (United States)

    Jouikov, Vyacheslav V.

    1997-06-01

    Data on the processes of electrochemical reduction and oxidation of organosilicon compounds of various classes as well as on the interaction of these compounds with electrically generated reagents are generalised and surveyed systematically. The electrochemical reactivity of organic derivatives of silicon is considered taking into account their structures and reaction conditions. The bibliography includes 245 references.

  4. Application of the multi-parameter SQM harmonic force field, and ESFF harmonic frequencies scaling procedures to the determination of the vibrational spectra of silicon- and sulfur(II)-containing compounds.

    Science.gov (United States)

    Borowski, Piotr; Ruiz, Tomas Peña; Barczak, Mariusz; Pilorz, Karol; Pasieczna-Patkowska, Sylwia

    2012-02-01

    Multi-parameter scaling techniques, such as Scaled Quantum Mechanical (SQM) force field [J. Am. Chem. Soc. 105 (1983) 7037-7047; J. Phys. Chem. A 102 (1998) 1412-1424] or Effective Scaling Frequency Factor (ESFF) [Chem. Phys. Lett. 446 (2007) 191-198; J. Mol. Spectrosc. 264 (2010) 66-74] techniques, are very powerful in the theoretical prediction of the vibrational spectra of complex molecules. In the present work sets of transferable SQM and ESFF scaling factors (within the valence coordinates based schemes) that can be applied to silicon- and sulfur(II)-containing compounds have been determined. A number of VDZ- and VTZ-quality basis sets were used in conjunction with the B3LYP density functional. Eight molecules typically used in the synthesis of silica-based materials were chosen, and theoretical modes were assigned to bands detected on their IR or Raman spectra. This set was augmented with a set of 10 auxiliary, sulfur(II)-containing molecules, for which only "pure" vibrations involving S-containing motifs were assigned. This led to the set of more than 600 individual vibrations. Five factors attributed to these motifs were optimized. Scaling factors attributed to the characteristic types of internal coordinates including the second-row atoms and chlorine, which are applicable to the present molecules were preset. Their values, optimized for Baker's training set of molecules [J. Phys. Chem. A 102 (1998) 1412-1424] for all basis sets considered in this work, were also found, extending thus the applicability of the multi-parameter scaling methods. New scaling factors exhibit low statistical uncertainties. Reasonable agreement between experimental and SQM- or ESFF-scaled frequencies was obtained even for the 6-31G* basis set (RMSSQM scaling factors were found to occasionally exhibit large deviations from unity, which is to be contrasted with ESFF scaling factors.

  5. 复合硫化剂对氟橡胶/硅橡胶共混物结构和性能的影响%Effect of Compound Curing Systems on Morphology and Properties of Fluororubber/Silicone Rubber Blends

    Institute of Scientific and Technical Information of China (English)

    郭建华; 曾幸荣; 罗权焜

    2011-01-01

    The fluororubber(FKM) and silicone rubber(MVQ) blends were vulcanized with dicumyl peroxide(DCP)/triallyl isocyanurate(TAIC),bisphenol AF/benzyltriphenylchlorophosphine(BPP)/DCP and N,N′-dicinnamal-1,6-hexamethylenediamine(DIAK No.3)/DCP compound curing system,respectively.Effect of the compound curing systems on curing behavior,mechanical properties,heat ageing properties,oil resistance and low temperature properties of FKM/MVQ blends was studied.FKM/MVQ blends were characterized by DMA,TG and SEM analysis.The results show that FKM/MVQ blends vulcanized with DCP/TAIC curing system have better over-all physical properties than those vulcanized with bisphenol AF/BPP/DCP and DIAK No.3/DCP curing systems.DMA results indicate that Tg of FKM and MVQ matrix in the blends cured with DCP/TAIC is highest.DCP/TAIC-cured blends show better thermal stability than those vulcanized with the other curing systems by TG analysis.There are well adhered at the interface in DCP/TAIC-cured blends by SEM photos.%分别采用过氧化二异丙苯(DCP)/三烯丙基异氰脲酸酯(TAIC)、双酚AF/苄基三苯基氯化磷(BPP)/DCP、3#硫化剂/DCP三种复合硫化剂硫化氟橡胶/硅橡胶共混物。研究了不同复合硫化剂对氟橡胶/硅橡胶共混物的硫化特性、力学性能、耐热老化性能、耐油性能和低温性能的影响,采用动态热机械分析(DMA)、热重分析(TG)和扫描电镜(SEM)方法对氟橡胶/硅橡胶共混物进行表征。结果表明,采用DCP/TAIC硫化的氟橡胶/硅橡胶共混物具有良好的综合物理力学性能。DMA分析表明,DCP/TAIC硫化的共混物中氟橡胶相和硅橡胶相的Tg最高,TG分析表明,DCP/TAIC硫化的共混物具有良好的热稳定性。SEM照片表明,DCP/TAIC硫化的共混物界面结合作用较强。

  6. Silicon Spintronics

    NARCIS (Netherlands)

    Jansen, R.

    2008-01-01

    Integration of magnetism and mainstream semiconductor electronics could impact information technology in ways beyond imagination. A pivotal step is implementation of spin-based electronic functionality in silicon devices. Remarkable progress made during the last two years gives confidence that this

  7. Silício alterando compostos derivados da pirólise de bainhas foliares de plantas de arroz infectadas por Rhizoctonia solani Silicon altering compounds derived from the pyrolyses of leaf sheaths of rice plants infected with Rhizoctonia solani

    Directory of Open Access Journals (Sweden)

    Daniel Augusto Schurt

    2013-01-01

    Full Text Available Este trabalho teve como objetivo elucidar, por meio da pirólise analítica acoplada à cromatografia gasosa e espectrometria de massa, alterações na composição química da lignina nas bainhas de plantas de arroz das cultivares BR-Irga 409 e Labelle supridas ou não com silício (Si e infectadas por Rhizoctonia solani. A concentração de Si nas bainhas das plantas supridas com esse elemento foi significativamente maior (2,7 dag kg-1 em comparação com as plantas não supridas (0,45 dag kg-1. Na presença de Si, a área abaixo da curva do progresso da queima das bainhas foi significativamente reduzida em 19 e 25%, respectivamente, para as plantas das cultivares BR-Irga-409 e Labelle em relação à ausência desse elemento na solução nutritiva. Com base nos espectros de massas obtidos, foram identificados 33 compostos, dos quais 10 foram produtos da degradação de carboidratos e 23 derivados da lignina. Dentre os derivados da lignina, oito compostos eram do tipo p-hidroxifenila, 11 compostos do tipo guaiacila e quatro compostos do tipo siringila. Nas bainhas das plantas das duas cultivares de arroz, supridas ou não com Si, a concentração de lignina (p-hidroxifenila, siringila (S e guaiacila (G foi de, aproximadamente, 15%. Houve aumento na relação S/G apenas nas bainhas das plantas da cultivar BR-Irga 409 supridas com Si e infectadas por R. solani. A maior concentração de Si nas bainhas das plantas de arroz das duas cultivares, que por sua vez resultou em aumento na relação S/G, contribuiu para reduzir os sintomas da queima das bainhas.This study elucidated, through analytical pyrolysis coupled to gas chromatography and mass spectrometry, changes in the chemical composition of lignin on leaf sheaths of rice plants of cultivars BR-Irga 409 and Labelle supplied or non-supplied with silicon (Si and infected with Rhizoctonia solani. The Si concentration on leaf sheaths of plants supplied with this element was significatively higher

  8. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  9. A general classification of silicon utilizing organisms

    Science.gov (United States)

    Das, P.; Das, S.

    2010-12-01

    Silicon utilizing organisms may be defined as organisms with high silicon content (≥ 1% dry weight) and they can metabolize silicon with or without demonstrable silicon transporter genes (SIT) in them(Das,2010). Silicon is the second most abundant element in the lithosphere (27.70%) and it is as important as phosphorus and magnesium (0.03%) in the biota. Hydrated silica represents the second most abundant biogenic mineral after carbonate minerals. Silicon is accumulated and metabolized by some prokaryotes, and Si compounds can stimulate the growth of a range of fungi. It is well known that Si is essential for diatoms. In mammals, Si is considered an essential trace element, required in bone, cartilage and connective tissue formation, enzymatic activities and other metabolic processes. Silicon was suggested to act as a phosphoprotein effector in bone. In mammals, Si is also reported to positively influence the immune system and to be required for lymphocyte proliferation. The aqueous chemistry of Si is dominated by silicic acid at biological pH ranges. Monosilicic acid can form stable complexes with organic hydroxy-containing molecules . Biosilica also has been identified associated with various biomolecules including proteins and carbohydrates. There are main seven groups of silicon utilizing organisms belonging to Gram positive bacteria, algae, protozoa, sponges, fungi, lichens, and monocotyledon plants. In each group again all the members are not silicon utilizing organisms, thus selective members in each group are further classified depending their degree of silicon utilization. Important silicon utilizing bacteria are Mycobacteria, Nocardia, Streptomyces, Staphylococcus, Bacillus, Lactobacillus spp. etc., Important silicon utilizing algae are Centrobacillariophyceae, Pennatibacillariophyceae and Chrysophyceae. Many protozoa belonging to Heterokonta, Choanoflagellida, Actinopoda are well known silicon utilizing microorganisms. Hexactinellida ( glass sponges

  10. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  11. Organosilicon Compounds and Polymers and Silicon Ceramics

    Science.gov (United States)

    1992-11-23

    X Congreso Nacional de la Academia Mexicana de Quimica Inorganica (Zacatecas, Mexico; invited speaker) Institute of Materials Science, University of...Central Research and Development Department, du Pont (Wilmington, DE) Alcoa Technical Center XIX Congreso Latinoamericano de Quimica (Buenos Aires

  12. Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

    Science.gov (United States)

    Tanaka, Hidehiko

    1987-01-01

    A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

  13. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  14. Fabrication and characterization of ternary compound PMnN-PZT thin films on silicon substrates%硅基三元系PMnN—PZT铁电薄膜制备与研究

    Institute of Scientific and Technical Information of China (English)

    张涛; 张淑仪; 李敏; 周胜男; 孙斌

    2012-01-01

    利用磁控溅射方法在单晶Si基底上沉积三元系铁电薄膜6%PMnN-94%5PZT(6%Pb(Mn1/3,Nb2/3)O3—94%Pb(Zr0.52,Ti0.48)O3),采用淬火方法对薄膜进行处理,以促进薄膜钙钛矿结构形成。同时,在相同条件下制备非掺杂PZT(52/48)薄膜以对比薄膜掺杂效果。运用X射线衍射(XRD)技术分析薄膜晶向及晶体结构,运用SawyerTower电路测试薄膜铁电性能,运用激光测振仪测试薄膜的压电系数。实验结果表明,所沉积薄膜为多晶钙钛矿结构铁电薄膜,薄膜铁电剩余极化Pr=23.7μC/cm2,饱和极化Ps=40μC/cm2,矫顽场电压2Ec=139kV/cm,横向压电系数e11=-13.2C/m2,薄膜的铁电及压电性能优良。%The ternary compound ferroelectric thin films, 6% Pb ( Mnl/3 , Nb2/3 ) O3-94 % Pb (Zr0.52, Ti0.48 ) 03, were deposited on the silicon substrates by the magnetron sputtering method, and the quench method was adopted for the post heat treatment for the perovskite phase. Besides, the non-doped PZT(52/48) thin films were also fab- ricated for comparisons with the same sputtering method. The X-ray diffraction was used to characterize the crystal structures of thin films, and the Sawyer Tower circuit was used to measure the ferroelectricity, and the laser vibration measurement system was used to measure the transverse piezoelectric coefficient of thin films. The results show that the PMnN-PZT thin films own perovskite structures, and the remnant polarization Pr = 23. 7μC/cm2 , the saturation polarization Ps=40μC/cm2 and the coercive electric field 2Ec=139kV/cm, and the transverse piezoelectric coefficient c31 = - 13. 2C/m2 , which identifies that the PMnN-PZT thin films own excellent ferroeleetricity and piezoelectricity.

  15. Formation of metal nanoparticles in silicon nanopores: Plasmon resonance studies

    Science.gov (United States)

    Polisski, S.; Goller, B.; Heck, S. C.; Maier, S. A.; Fujii, M.; Kovalev, D.

    2011-01-01

    We present a method for the formation of noble metal nanoparticle ensembles in nanostructured silicon. The key idea is based on the unique property of the large reduction potential of extended internal hydrogen-terminated porous silicon surfaces. The process of metal nanoparticle formation in porous silicon was experimentally traced using their optical plasmon resonance response. We also demonstrate that bimetallic compounds can be formed in porous silicon and that their composition can be controlled using this technique. Experimental results were found to contradict partially with considerations based on Mie theory.

  16. Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

    Science.gov (United States)

    Ferguson, Frank T.; Nuth, Joseph A., III

    2012-01-01

    The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

  17. Silicon clathrates and carbon analogs: high pressure synthesis, structure, and superconductivity.

    Science.gov (United States)

    Yamanaka, Shoji

    2010-02-28

    Compounds with cage-like structures of elemental silicon and carbon are comparatively reviewed. Barium containing silicon clathrate compounds isomorphous with type I gas hydrates were prepared using high pressure and high temperature (HPHT) conditions, and found to become superconductors. The application of HPHT conditions to Zintl binary silicides have produced a number of silicon-rich cage-like structures including new clathrate structures; most of them are superconductors. Carbon analogs of silicon clathrates can be prepared by 3D polymerization of C(60) under HPHT conditions, which are new allotropes of carbon with expanded framework structures. The crystal chemistry and characteristic properties of some related compounds are also reviewed.

  18. Photophysical properties of luminescent silicon nanoparticles surface-modified with organic molecules via hydrosilylation.

    Science.gov (United States)

    Miyano, Mari; Kitagawa, Yuichi; Wada, Satoshi; Kawashima, Akira; Nakajima, Ayako; Nakanishi, Takayuki; Ishioka, Junya; Shibayama, Tamaki; Watanabe, Seiichi; Hasegawa, Yasuchika

    2016-01-01

    Luminescent silicon nanoparticles have attracted considerable attention for their potential uses in various applications. Many approaches have been reported to protect the surface of silicon nanoparticles and prevent their easy oxidation. Various air-stable luminescent silicon nanoparticles have been successfully prepared. However, the effect of interactions of the π-electron system with the silicon surface on the excited state properties of silicon nanoparticles is unclear. In this study, we have successfully prepared silicon nanoparticles protected with three organic compounds (styrene, 1-decene, and 1-vinyl naphthalene) and have examined their photophysical properties. The ligand π-electron systems on the silicon surface promoted the light harvesting ability for the luminescence through a charge transfer transition between the protective molecules and silicon nanoparticles and also enhanced the radiative rate of the silicon nanoparticles.

  19. Double stabilization of nanocrystalline silicon: a bonus from solvent

    Energy Technology Data Exchange (ETDEWEB)

    Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A., E-mail: aslanov.38@mail.ru [Lomonosov Moscow State University (Russian Federation)

    2016-01-15

    Double stabilization of the silicon nanocrystals was observed for the first time by {sup 29}Si and {sup 13}C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C–O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

  20. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  1. High performance compound semiconductor SPAD arrays

    Science.gov (United States)

    Harmon, Eric S.; Naydenkov, Mikhail; Bowling, Jared

    2016-05-01

    Aggregated compound semiconductor single photon avalanche diode (SPAD) arrays are emerging as a viable alternative to the silicon photomultiplier (SiPM). Compound semiconductors have the potential to surpass SiPM performance, potentially achieving orders of magnitude lower dark count rates and improved radiation hardness. New planar processing techniques have been developed to enable compound semiconductor SPAD devices to be produced with pixel pitches of 11 - 25 microns, with thousands of SPADs per array.

  2. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible luminescenc

  3. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  4. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    2001-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible luminescenc

  5. 硫酸钙晶须在室温硫化硅橡胶中的应用%Application of Calcium Sulfate Whisker in Room Temperature Vulcanized Silicone Rubber Compounds

    Institute of Scientific and Technical Information of China (English)

    王锦成; 薛烨; 仓世娇; 杨科

    2011-01-01

    研究硫酸钙晶须制备方法和用量对室温硫化硫酸钙晶须/硅橡胶复合材料性能的影响.结果表明,当硫酸钙晶须用量为10份时,复合材料的物理性能总体提高显著.扫描电子显微镜分析结果显示,烟气脱硫法硫酸钙晶须杂质较多,在硅橡胶中分散不均匀;电石渣法硫酸钙晶须内部结构完整,在硅橡胶中分散均匀.随着硫酸钙晶须用量增大,硅橡胶的粘度增大.热重分析结果显示,与烟气脱硫法硫酸钙晶须相比,电石渣法硫酸钙晶须对复合材料热稳定性能的改善较明显.%The influence of preparation method and addition level of calcium sulfate whisker on theproperties of room temperature vulcanized silicone rubber/calcium sulfate whisker composite was investigated. The results showed that, as the addition level of calcium sulfate whisker was 10 phr,the physical properties of composite were improved significantly. The SEM analysis result showed that, the calcium sulfate whisker prepared by gas desulfurization method possessed more impurities,and was dispersed unevenly in silicone rubber;the calcium sulfate whisker prepared by carbide slag method had better integrated internal structure, and was dispersed uniformly in silicone rubber. As the addition level of calcium sulfate whisker increased,the viscosity of silicone rubber increased. The TG analysis result showed that,compared with gas desulfurization method,the calcium sulfate whisker prepared by carbide slag method provided the composite better thermal stability.

  6. Tunable, antibacterial activity of silicone polyether surfactants.

    Science.gov (United States)

    Khan, Madiha F; Zepeda-Velazquez, Laura; Brook, Michael A

    2015-08-01

    Silicone surfactants are used in a variety of applications, however, limited data is available on the relationship between surfactant structure and biological activity. A series of seven nonionic, silicone polyether surfactants with known structures was tested for in vitro antibacterial activity against Escherichia coli BL21. The compounds varied in their hydrophobic head, comprised of branched silicone structures with 3-10 siloxane linkages and, in two cases, phenyl substitution, and hydrophilic tail of 8-44 poly(ethylene glycol) units. The surfactants were tested at three concentrations: below, at, and above their Critical Micelle Concentrations (CMC) against 5 concentrations of E. coli BL21 in a three-step assay comprised of a 14-24h turbidometric screen, a live-dead stain and viable colony counts. The bacterial concentration had little effect on antibacterial activity. For most of the surfactants, antibacterial activity was higher at concentrations above the CMC. Surfactants with smaller silicone head groups had as much as 4 times the bioactivity of surfactants with larger groups, with the smallest hydrophobe exhibiting potency equivalent to sodium dodecyl sulfate (SDS). Smaller PEG chains were similarly associated with higher potency. These data link lower micelle stability and enhanced permeability of smaller silicone head groups to antibacterial activity. The results demonstrate that simple manipulation of nonionic silicone polyether structure leads to significant changes in antibacterial activity.

  7. Chemical Analysis Methods for Silicon Carbide

    Institute of Scientific and Technical Information of China (English)

    Shen Keyin

    2006-01-01

    @@ 1 General and Scope This Standard specifies the determination method of silicon dioxide, free silicon, free carbon, total carbon, silicon carbide, ferric sesquioxide in silicon carbide abrasive material.

  8. Glass-silicon column

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  9. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  10. Impact of Dissolved Silicon Compound on Reverse Osmosis System and Control%溶解性硅化合物对反渗透系统的影响及控制

    Institute of Scientific and Technical Information of China (English)

    王伟; 司建辉; 王同祖; 徐奕; 魏银桥

    2012-01-01

    在炼油化工污水回用处理过程中,由于废水中的溶解性硅浓度较高,使反渗透膜表面形成了致密的硅垢,严重影响反渗透膜的长周期安全运行,且给反渗透膜的清洗工作带来了很大困难。着重对污水处理系统各单元的水质情况及已结垢反渗透(RO)膜表面进行系统分析,并通过絮凝沉降实验,分别向污水中投加氨水、石灰水或氢氧化钠固体等优化调节其pH值,使其最大限度地降低污水中的溶解性硅浓度,形成了一套可行、有针对性、易操作的膜结垢控制方案。在装置技术改造期间实施了这套方案,达到了预期的试验效果。%In the re - utilization of waste water in petroleum refineries and petrochemical plants, the compact of silicon foul on the surface of reverse - osmosis membrane due to higher concentration of dissolved silicon in the waste water has seriously affected the long - term safe operation of the reverse - osmosis membrane and created great difficulty for the cleaning of the reverse - osmosis membrane. Based upon the analysis of waste water quality in waste water treatment system and fouled surface of reverse - osmosis and thrnugh the floeeulation experiment, liquid ammonia, lime water or solid sodium hydroxide was added to the waste water to optimally adjust its pH value and minimize the concentration of dissolved silicon in waste water. As the result, a feasible, effective and easy - operating membrane fouling control process has been developed ; The predicted objectives have been reached when the process was applied in the technical revamping of the project.

  11. Structural and magnetic properties of some pseudo-binary and ternary compounds at high curie temperature prepared in the systems: -) rare earth (Nd, Sm) iron hydrogen, -) gadolinium iron aluminium, and -) uranium iron or cobalt silicon or germanium; Proprietes structurales et magnetiques de quelques composes pseudobinaires et ternaires ferromagnetiques a temperature de curie elevee prepares dans les systemes: -) terres rares Nd Sm fer hydrogene, -) gadolinium fer aluminium, and -) uranium fer ou cobalt silicium ou germanium

    Energy Technology Data Exchange (ETDEWEB)

    Berlureau, T

    1991-07-15

    This work highlights the importance of crystal and chemical studies for understanding the magnetic properties of systems as complex as inter-metallic compounds involving rare-earth elements, uranium, silicon or germanium. With a view of finding new compounds with high Curie temperature and strong magneto-crystal anisotropy, it appears that uranium compounds such as UFe{sub 10}Si{sub 2}, UCo{sub 10}Si{sub 2}, U(Fe{sub 10-x}Co{sub x})Si{sub 2} and U{sub 2}M{sub 17-y}X{sub y} where M is Fe or Co and Y is Si or Ge, are interesting because of the 5f orbital that can form bands through direct overlapping and can link itself very strongly with orbitals of nearby atoms.

  12. Silicon micro-mold

    Science.gov (United States)

    Morales, Alfredo M.

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  13. SILICON CARBIDE FOR SEMICONDUCTORS

    Science.gov (United States)

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  14. Silicon Carbide Shapes.

    Science.gov (United States)

    Free-standing silicon carbide shapes are produced by passing a properly diluted stream of a reactant gas, for example methyltrichlorosilane, into a...reaction chamber housing a thin walled, hollow graphite body heated to 1300-1500C. After the graphite body is sufficiently coated with silicon carbide , the...graphite body is fired, converting the graphite to gaseous CO2 and CO and leaving a silicon carbide shaped article remaining.

  15. Photoluminescent silicon nanocrystals with chlorosilane surfaces - synthesis and reactivity

    Science.gov (United States)

    Höhlein, Ignaz M. D.; Kehrle, Julian; Purkait, Tapas K.; Veinot, Jonathan G. C.; Rieger, Bernhard

    2014-12-01

    We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place.We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place. Electronic supplementary information (ESI) available: Detailed experimental procedures and additional NMR, PL, EDX, DLS and TEM data. See DOI: 10.1039/C4NR05888G

  16. Low-density silicon allotropes for photovoltaic applications

    Science.gov (United States)

    Amsler, Maximilian; Botti, Silvana; Marques, Miguel A. L.; Lenosky, Thomas J.; Goedecker, Stefan

    2015-07-01

    Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hopping crystal structure prediction method. The algorithm was optimized to specifically investigate the hitherto barely explored low-density regime of the silicon phase diagram by imitating the guest-host concept of clathrate compounds. In total, 44 metastable phases are presented, of which 11 exhibit direct or quasidirect band gaps in the range of ≈1.0-1.8 eV, close to the optimal Shockley-Queisser limit of ≈1.4 eV, with a stronger overlap of the absorption spectra with the solar spectrum compared to conventional diamond silicon. Due to the structural resemblance to known clathrate compounds it is expected that the predicted phases can be synthesized.

  17. Laser-induced phase separation of silicon carbide

    Science.gov (United States)

    Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

    2016-11-01

    Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (~2.5 nm) and polycrystalline silicon (~5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system.

  18. Novel Silicon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Novel silicon nanotubes with inner-diameter of 60-80 nm was prepared using hydrogen-added dechlorination of SiCl4 followed by chemical vapor deposition (CVD) on a NixMgyO catalyst. The TEM observation showed that the suitable reaction temperature is 973 K for the formation of silicon nanotubes. Most of silicon nanotubes have one open end and some have two closed ends. The shape ofnanoscale silicon, however, is a micro-crystal type at 873 K, a rod or needle type at 993 K and an onion-type at 1023 K, respectively.

  19. Technical assistance for development of thermally conductive nitride filler for epoxy molding compounds

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Ho Jin; Song, Kee Chan; Jung, In Ha

    2005-07-15

    Technical assistance was carried out to develop nitride filler for thermally conductive epoxy molding compounds. Carbothermal reduction method was used to fabricate silicon nitride powder from mixtures of silica and graphite powders. Microstructure and crystal structure were observed by using scanning electron microscopy and x-ray diffraction technique. Thermal properties of epoxy molding compounds containing silicon nitride were measured by using laser flash method. Fabrication process of silicon nitride nanowire was developed and was applied to a patent.

  20. Breast Implants: Saline vs. Silicone

    Science.gov (United States)

    ... differ in material and consistency, however. Saline breast implants Saline implants are filled with sterile salt water. ... of any age for breast reconstruction. Silicone breast implants Silicone implants are pre-filled with silicone gel — ...

  1. Microstructure evolution of A356 alloy under compound field

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Zhongtao, E-mail: zhongtaozhang@yahoo.com.c [State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams and School of Material Science and Engineering, Dalian University of Technology, Dalian, Liaoning 116024 (China); Li Jie; Yue Hongyun; Zhang Jian [State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams and School of Material Science and Engineering, Dalian University of Technology, Dalian, Liaoning 116024 (China); Li Tingju, E-mail: tjuli@dlut.edu.c [State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams and School of Material Science and Engineering, Dalian University of Technology, Dalian, Liaoning 116024 (China)

    2009-09-18

    Compound field (combination of power ultrasonic field and rotating electromagnetic field) was used to modify the microstructure of A356 alloy. The effect of compound field on the solidification of the A356 alloy was investigated and the obtained samples were characterized by optical microscopy and scanning electron microscopy (SEM). The results showed that: (1) both the primary aluminum and eutectic silicon were significantly refined; (2) the dendritic primary aluminum became spherical, and the plate-like eutectic silicon turned into rod-like during the solidification process under compound field. The mechanism of the microstructure evolution under compound field was also preliminarily discussed.

  2. Diffusion in semiconductors, other than silicon compilation

    CERN Document Server

    Fisher, David J

    2011-01-01

    Review from Book News Inc.: Summary reports of 337 experiments provide information on the diffusion of matter and heat in 31 materials used in semiconductors. Most of the compounds are based on cadmium, gallium, indium, lead, and zinc. Mercury telluride is included however, as is silicon carbide for some reason. Each article is thoroughly referenced to the authors and publication number, date, and page. The arrangement is alphabetical by semiconductor material. Indexes cover authors, hosts, and diffusants.

  3. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  4. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  5. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  6. ALICE silicon strip module

    CERN Multimedia

    Maximilien Brice

    2006-01-01

    This small silicon detector strip will be inserted into the inner tracking system (ITS) on the ALICE detector at CERN. This detector relies on state-of-the-art particle tracking techniques. These double-sided silicon strip modules have been designed to be as lightweight and delicate as possible as the ITS will eventually contain five square metres of these devices.

  7. SILICON CARBIDE DATA SHEETS

    Science.gov (United States)

    These data sheets present a compilation of a wide range of electrical, optical and energy values for alpha and beta- silicon carbide in bulk and film...spectrum. Energy data include energy bands, energy gap and energy levels for variously-doped silicon carbide , as well as effective mass tables, work

  8. Silicon Valley Ecosystem

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ It is unlikely that any industrial region of the world has received as much scrutiny and study as Silicon Valley. Despite the recent crash of Internet and telecommunications stocks,Silicon Valley remains the world's engine of growth for numerous high-technology sectors.

  9. Incorporation of dopant impurities into a silicon oxynitride matrix containing silicon nanocrystals

    Science.gov (United States)

    Ehrhardt, Fabien; Ulhaq-Bouillet, Corinne; Muller, Dominique; Slaoui, Abdelilah; Ferblantier, Gérald

    2016-05-01

    Dopant impurities, such as gallium (Ga), indium (In), and phosphorus (P), were incorporated into silicon-rich silicon oxynitride (SRSON) thin films by the ion implantation technique. To form silicon nanoparticles, the implanted layers were thermally annealed at temperatures up to 1100 °C for 60 min. This thermal treatment generates a phase separation of the silicon nanoparticles from the SRSON matrix in the presence of the dopant atoms. We report on the position of the dopant species within the host matrix and relative to the silicon nanoparticles, as well as on the effect of the dopants on the crystalline structure and the size of the Si nanoparticles. The energy-filtered transmission electron microscopy technique is thoroughly used to identify the chemical species. The distribution of the dopant elements within the SRSON compound is determined using Rutherford backscattering spectroscopy. Energy dispersive X-ray mapping coupled with spectral imaging of silicon plasmons was performed to spatially localize at the nanoscale the dopant impurities and the silicon nanoparticles in the SRSON films. Three different behaviors were observed according to the implanted dopant type (Ga, In, or P). The In-doped SRSON layers clearly showed separated nanoparticles based on indium, InOx, or silicon. In contrast, in the P-doped SRSON layers, Si and P are completely miscible. A high concentration of P atoms was found within the Si nanoparticles. Lastly, in Ga-doped SRSON the Ga atoms formed large nanoparticles close to the SRSON surface, while the Si nanoparticles were localized in the bulk of the SRSON layer. In this work, we shed light on the mechanisms responsible for these three different behaviors.

  10. Photoluminescence of Silicon Nanocrystals in Silicon Oxide

    Directory of Open Access Journals (Sweden)

    L. Ferraioli

    2007-01-01

    Full Text Available Recent results on the photoluminescence properties of silicon nanocrystals embedded in silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals produced by high-temperature annealing of silicon rich oxide layers deposited by plasma-enhanced chemical vapor deposition. The influence of deposition parameters and layer thickness is analyzed in detail. The nanocrystal size can be roughly controlled by means of Si content and annealing temperature and time. Unfortunately, a technique for independently fine tuning the emission efficiency and the size is still lacking; thus, only middle size nanocrystals have high emission efficiency. Interestingly, the layer thickness affects the nucleation and growth kinetics so changing the luminescence efficiency.

  11. Steps towards silicon optoelectronics

    CERN Document Server

    Starovoytov, A

    1999-01-01

    nanostructure fabrication. Thus, this thesis makes a dual contribution to the chosen field: it summarises the present knowledge on the possibility of utilising optical properties of nanocrystalline silicon in silicon-based electronics, and it reports new results within the framework of the subject. The main conclusion is that due to its promising optoelectronic properties nanocrystalline silicon remains a prospective competitor for the cheapest and fastest microelectronics of the next century. This thesis addresses the issue of a potential future microelectronics technology, namely the possibility of utilising the optical properties of nanocrystalline silicon for optoelectronic circuits. The subject is subdivided into three chapters. Chapter 1 is an introduction. It formulates the oncoming problem for microelectronic development, explains the basics of Integrated Optoelectronics, introduces porous silicon as a new light-emitting material and gives a brief review of other competing light-emitting material syst...

  12. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  13. Wet-chemical systems and methods for producing black silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yost, Vernon; Yuan, Hao-Chih; Page, Matthew

    2015-05-19

    A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.

  14. Polybenzimidazole compounds

    Science.gov (United States)

    Klaehn, John R.; Peterson, Eric S.; Wertsching, Alan K.; Orme, Christopher J.; Luther, Thomas A.; Jones, Michael G.

    2010-08-10

    A PBI compound that includes imidazole nitrogens, at least a portion of which are substituted with an organic-inorganic hybrid moiety. At least 85% of the imidazole nitrogens may be substituted. The organic-inorganic hybrid moiety may be an organosilane moiety, for example, (R)Me.sub.2SiCH.sub.2--, where R is selected from among methyl, phenyl, vinyl, and allyl. The PBI compound may exhibit similar thermal properties in comparison to the unsubstituted PBI. The PBI compound may exhibit a solubility in an organic solvent greater than the solubility of the unsubstituted PBI. The PBI compound may be included in separatory media. A substituted PBI synthesis method may include providing a parent PBI in a less than 5 wt % solvent solution. Substituting may occur at about room temperature and/or at about atmospheric pressure. Substituting may use at least five equivalents in relation to the imidazole nitrogens to be substituted or, preferably, about fifteen equivalents.

  15. Nonlinear conductivity in silicon nitride

    Science.gov (United States)

    Tuncer, Enis

    2017-08-01

    To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

  16. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  17. Roadmap on silicon photonics

    Science.gov (United States)

    Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

    2016-07-01

    Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

  18. Silicon in plant disease control

    Directory of Open Access Journals (Sweden)

    Edson Ampélio Pozza

    2015-06-01

    Full Text Available All essential nutrients can affect the incidence and severity of plant diseases. Although silicon (Si is not considered as an essential nutrient for plants, it stands out for its potential to decrease disease intensity in many crops. The mechanism of Si action in plant resistance is still unclear. Si deposition in plant cell walls raised the hypothesis of a possible physical barrier to pathogen penetration. However, the increased activity of phenolic compounds, polyphenol oxidases and peroxidases in plants treated with Si demonstrates the involvement of this element in the induction of plant defense responses. The studies examined in this review address the role of Si in disease control and the possible mechanisms involved in the mode of Si action in disease resistance in plants.

  19. Trade-Offs between Silicon and Phenolic Defenses may Explain Enhanced Performance of Root Herbivores on Phenolic-Rich Plants.

    Science.gov (United States)

    Frew, Adam; Powell, Jeff R; Sallam, Nader; Allsopp, Peter G; Johnson, Scott N

    2016-08-01

    Phenolic compounds play a role in plant defense against herbivores. For some herbivorous insects, particularly root herbivores, host plants with high phenolic concentrations promote insect performance and tissue consumption. This positive relationship between some insects and phenolics, however, could reflect a negative correlation with other plant defenses acting against insects. Silicon is an important element for plant growth and defense, particularly in grasses, as many grass species take up large amounts of silicon. Negative impact of a high silicon diet on insect herbivore performance has been reported aboveground, but is unreported for belowground herbivores. It has been hypothesized that some silicon accumulating plants exhibit a trade-off between carbon-based defense compounds, such as phenolics, and silicon-based defenses. Here, we investigated the impact of silicon concentrations and total phenolic concentrations in sugarcane roots on the performance of the root-feeding greyback canegrub (Dermolepida albohirtum). Canegrub performance was positively correlated with root phenolics, but negatively correlated with root silicon. We found a negative relationship in the roots between total phenolics and silicon concentrations. This suggests the positive impact of phenolic compounds on some insects may be the effect of lower concentrations of silicon compounds in plant tissue. This is the first demonstration of plant silicon negatively affecting a belowground herbivore.

  20. Recrystallization of polycrystalline silicon

    Science.gov (United States)

    Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

    1981-01-01

    Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

  1. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  2. Microstructured silicon radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Okandan, Murat; Derzon, Mark S.; Draper, Bruce L.

    2017-03-14

    A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

  3. Emissivity of microstructured silicon.

    Science.gov (United States)

    Maloney, Patrick G; Smith, Peter; King, Vernon; Billman, Curtis; Winkler, Mark; Mazur, Eric

    2010-03-01

    Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 microm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range. Hemispherical-total emissivity is calculated for the samples and found to be 0.84 before a measurement-induced annealing and 0.65 after the measurement for the sulfur-doped sample. Secondary samples lack a measurement-induced anneal, and reasons for this discrepancy are presented. Emissivity numbers are plotted and compared with a silicon substrate, and Aeroglaze Z306 black paint. Use of microstructured silicon as a blackbody or microbolometer surface is modeled and presented, respectively.

  4. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  5. Organic Compounds in Silica Bodies of Rice Revealed by X-ray Microanalysis and Micro-infrared Spectroscopy

    Institute of Scientific and Technical Information of China (English)

    MA Xue-long; FANG Jiang-yu

    2005-01-01

    To understand the possible mechanism controlling the formation of silicon bodies in higher plants, we need to know the nature of organic compounds associated with silicon bodies and induces silicon precipitation in plant cells. A new method was developed to isolate pure silicon body in fresh leaves of rice (Oryaa sativa L. Var. 297) at low temperature by grinding and centrifugation procedures, which avoided degradation of organic molecules induced by high temperature and strong oxidizing acids used in the traditional method. The energy dispersive X-ray spectrum under scanning electron microscope showed that there was a great amount of carbon in silicon bodies in addition to silicon and oxygen. Organic compounds intimately associated with silicon bodies were released by treatment with HF solution. Analysis of the organic compounds by micro-infrared spectroscopy revealed the presence of polyphenol and polysaccharide and a little protein.

  6. Trace compounds affecting biogas energy utilisation - A review

    Energy Technology Data Exchange (ETDEWEB)

    Rasi, S., E-mail: saija.rasi@gmail.com [University of Jyvaeskylae, Department of Biological and Environmental Science, P.O. Box 35, FI-40014 (Finland); Laentelae, J.; Rintala, J. [University of Jyvaeskylae, Department of Biological and Environmental Science, P.O. Box 35, FI-40014 (Finland)

    2011-11-15

    Highlights: {yields} In regards to trace compounds, landfill gases are the most studied biogases. {yields} More strict requirements are set for biogas purity with new biogas applications. {yields} With traditional applications, small variations in biogas quality are acceptable. {yields} New requirements set challenges on raw material control and biogas quality. {yields} In this study, variations in analysing methods and biogas quality are discussed. - Abstract: This paper investigates the trace compounds affecting energy utilisation in biogas that come from different production sites. With biogas being more widely used in different energy applications more interest has arisen for the specific composition of biogas. In traditional energy applications, methane and hydrogen sulphide contents have had the most influence when energy utilisation application has been considered. With more advanced processes also the quantity and quality of trace compounds is more important. In regards to trace compounds, it was found that the concentrations and the variations of volatile organic compounds (VOCs) can be high in different landfills, especially, with compounds originating from the biological degradation process (like aromatics and terpenes) as seasonal variations affect the biological degradation. Trace compounds produced by direct volatilisation (halogenated and silicon compounds) show a smaller seasonal variation. Halogenated compounds are rarely present in high concentrations in waste water treatment plant (WWTP) biogas, but the concentrations of organic silicon compounds and their variation is high. Organic silicon compounds are usually detected only in low concentrations in co-digestion plant biogas, when no WWTP sludge is used as a raw material.

  7. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  8. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  9. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  10. Neuromorphic Silicon Photonics

    CERN Document Server

    Tait, Alexander N; de Lima, Thomas Ferreira; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

    2016-01-01

    We report first observations of an integrated analog photonic network, in which connections are configured by microring weight banks, as well as the first use of electro-optic modulators as photonic neurons. A mathematical isomorphism between the silicon photonic circuit and a continuous neural model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, existing neural engineering tools can be adapted to silicon photonic information processing systems. A 49-node silicon photonic neural network programmed using a "neural compiler" is simulated and predicted to outperform a conventional approach 1,960-fold in a toy differential system emulation task. Photonic neural networks leveraging silicon photonic platforms could access new regimes of ultrafast information processing for radio, control, and scientific computing.

  11. The DELPHI silicon tracker

    CERN Document Server

    Pernegger, H

    1997-01-01

    The DELPHI collaboration has upgraded the Silicon Vertex Detector in order to cope with the physics requirements for LEP200. The new detector consists of a barrel section with three layers of microstrip detectors and a forward extension made of hybrid pixel and large pitch strip detectors. The layout of the detector and the techniques used for the different parts of the new silicon detector shall be described.

  12. Multipurpose Compound

    Science.gov (United States)

    1983-01-01

    Specially formulated derivatives of an unusual basic compound known as Alcide may be the answer to effective treatment and prevention of the disease bovine mastitis, a bacterial inflammation of a cow's mammary gland that results in loss of milk production and in extreme cases, death. Manufactured by Alcide Corporation the Alcide compound has killed all tested bacteria, virus and fungi, shortly after contact, with minimal toxic effects on humans or animals. Alcide Corporation credits the existence of the mastitis treatment/prevention products to assistance provided the company by NERAC, Inc.

  13. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  14. Silicon-Based Light Sources for Silicon Integrated Circuits

    Directory of Open Access Journals (Sweden)

    L. Pavesi

    2008-01-01

    Full Text Available Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

  15. Oxygen defect processes in silicon and silicon germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Sgourou, E. N.; Londos, C. A. [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece); Schwingenschlögl, U. [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  16. Silicon bulk growth for solar cells: Science and technology

    Science.gov (United States)

    Kakimoto, Koichi; Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji

    2017-02-01

    The photovoltaic industry is in a phase of rapid expansion, growing by more than 30% per annum over the last few decades. Almost all commercial solar cells presently use single-crystalline or multicrystalline silicon wafers similar to those used in microelectronics; meanwhile, thin-film compounds and alloy solar cells are currently under development. The laboratory performance of these cells, at 26% solar energy conversion efficiency, is now approaching thermodynamic limits, with the challenge being to incorporate these improvements into low-cost commercial products. Improvements in the optical design of cells, particularly in their ability to trap weakly absorbed light, have also led to increasing interest in thin-film cells based on polycrystalline silicon; these cells have advantages over other thin-film photovoltaic candidates. This paper provides an overview of silicon-based solar cell research, especially the development of silicon wafers for solar cells, from the viewpoint of growing both single-crystalline and multicrystalline wafers.

  17. Respiratory Disease following Illicit Injection of Silicone: A Case Report

    Directory of Open Access Journals (Sweden)

    Alex Charles Essenmacher

    2013-01-01

    Full Text Available Unregulated, pseudomedical procedures risk serious sequelae even when otherwise safe compounds are used. Silicone is commonly used legally in cosmetic procedures owing to its durability, resistance to heat and aging, and low immunogenicity. However, inappropriate or illegal silicone injection can pose severe local and systemic complications including serious pulmonary compromise. We describe the case of a 30-year-old female who presented with hemoptysis and progressive shortness of breath following illicit silicone injections to the gluteal fat and was found to have new, diffuse, bilateral, ground-glass opacities on contrast-enhanced pulmonary computed tomography. Transbronchial biopsy elucidated that this was a lipoid pneumonia-type injury secondary to silicone infiltration.

  18. Multilayered silicone oil droplets of narrow size distribution: preparation and improved deposition on hair.

    Science.gov (United States)

    Nazir, Habiba; Wang, Lianyan; Lian, Guoping; Zhu, Shiping; Zhang, Yueling; Liu, Yuan; Ma, Guanghui

    2012-12-01

    Silicone oil droplets have limited deposition on hair due to electrostatic repulsion with negative surface charge of hair substrates. Aiming to improve silicone deposition on hair substrates, surface properties of uniform-sized silicone oil droplets (produced by membrane emulsification) were modified using layer-by-layer electrostatic deposition. By using this method, silicone oil droplets were coated with large molecular weight polymers, i.e. quaternized chitosan and alginate, and low molecular weight compounds, i.e. diallyl dimethyl ammonium chloride and glycerol to obtain six alternate layers of different surface charges. It was found that the dispersion of coated silicone oil droplets of narrow size distribution exhibited much improved mechanical strength and increased viscosity against shear compared to uncoated droplets. These multilayered silicone oil droplets were then added into model shampoos and conditioners to study the effect of charge and molecular weight of coating materials on silicone oil deposition on hair. The results clearly demonstrated that surface charge and charge density have significant influence on silicone oil deposition. Droplets with higher positive charge density resulted in increased deposition of silicone on hair due to electrostatic attraction. Characterization of the hair surface potential, wetting properties and friction certified the results further, showing reduced friction, decreased wetting angle and positive surface potential of high density positively charged silicone oil droplets. Therefore, LBL surface modification combined with membrane emulsification is a promising method for preparing multilayered silicone oil droplets of increased mechanical strength, viscosity and deposition on hair.

  19. Note: A portable laser induced breakdown spectroscopy instrument for rapid sampling and analysis of silicon-containing aerosols

    Science.gov (United States)

    McLaughlin, R. P.; Mason, G. S.; Miller, A. L.; Stipe, C. B.; Kearns, J. D.; Prier, M. W.; Rarick, J. D.

    2016-05-01

    A portable instrument has been developed for measuring silicon-containing aerosols in near real-time using laser-induced breakdown spectroscopy (LIBS). The instrument uses a vacuum system to collect and deposit airborne particulate matter onto a translatable reel of filter tape. LIBS is used to analyze the deposited material, determining the amount of silicon-containing compounds present. In laboratory testing with pure silica (SiO2), the correlation between LIBS intensity for a characteristic silicon emission and the concentration of silica in a model aerosol was determined for a range of concentrations, demonstrating the instrument's plausibility for identifying hazardous levels of silicon-containing compounds.

  20. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  1. Anionic reagents with silicon-containing double bonds.

    Science.gov (United States)

    Scheschkewitz, David

    2009-03-02

    E=Si transfer: Anionic compounds capable of transferring a silicon-containing double bond are reviewed (see figure), particularly reagents with Si=Si moieties (Tip=2,4,6-iPr(3)C(6)H(2), M=Li, Na, K) and their applications towards main-group and transition-metal electrophiles, as well as their reactivity towards organic compounds. A few recently reported derivatives with Si=C (Ad=1-adamantyl) and Si=P moieties are included for completeness.Anionic compounds capable of transferring a silicon double bond are summarized following an introduction to the differences between alkenes and their heavier homologues. The main focus is on reagents with Si=Si moieties and their applications towards main-group and transition-metal electrophiles, as well as their reactivity towards organic compounds, but a few recently reported derivatives with Si=C and Si=P bonds are also included.

  2. Layered amorphous silicon as negative electrodes in lithium-ion batteries

    Science.gov (United States)

    Zhao, Leyi; Dvorak, D. J.; Obrovac, M. N.

    2016-11-01

    Chemical delithiation is used to prepare bulk quantities of amorphous silicon powder from lithium-silicon compounds. The amorphous silicon materials formed are air and water stable and are found to have layered structures. When cycled in Li-ion half cells, coatings containing layered amorphous silicon are found to have significantly lower volume expansion during lithiation and improved cycling characteristics compared to that of bulk crystalline Si. We suggest chemical delithiation as a convenient method to synthesize bulk quantities of Si powders containing self-organized void spaces that can accommodate volume expansion during lithiation.

  3. Bond Angles in the Crystalline Silicon/Silicon Nitride Interface

    Science.gov (United States)

    Leonard, Robert H.; Bachlechner, Martina E.

    2006-03-01

    Silicon nitride deposited on a silicon substrate has major applications in both dielectric layers in microelectronics and as antireflection and passivation coatings in photovoltaic applications. Molecular dynamic simulations are performed to investigate the influence of temperature and rate of externally applied strain on the structural and mechanical properties of the silicon/silicon nitride interface. Bond-angles between various atom types in the system are used to find and understand more about the mechanisms leading to the failure of the crystal. Ideally in crystalline silicon nitride, bond angles of 109.5 occur when a silicon atom is at the vertex and 120 angles occur when a nitrogen atom is at the vertex. The comparison of the calculated angles to the ideal values give information on the mechanisms of failure in silicon/silicon nitride system.

  4. Intermetallic Compounds

    Science.gov (United States)

    Takagiwa, Y.; Matsuura, Y.; Kimura, K.

    2014-06-01

    We have focused on the binary narrow-bandgap intermetallic compounds FeGa3 and RuGa3 as thermoelectric materials. Their crystal structure is FeGa3-type (tetragonal, P42/ mnm) with 16 atoms per unit cell. Despite their simple crystal structure, their room temperature thermal conductivity is in the range 4-5-W-m-1-K-1. Both compounds have narrow-bandgaps of approximately 0.3-eV near the Fermi level. Because their Seebeck coefficients are quite large negative values in the range 350-FeGa3 and RuGa3 as n and p-type materials. The dimensionless figure of merit, ZT, was significantly improved by substitution of Sn for Ga in FeGa3 (electron-doping) and by substitution of Zn for Ga in RuGa3 (hole-doping), mainly as a result of optimization of the electronic part, S 2 σ.

  5. Organic Compounds

    Science.gov (United States)

    Shankland, Kenneth

    For many years, powder X-ray diffraction was used primarily as a fingerprinting method for phase identification in the context of molecular organic materials. In the early 1990s, with only a few notable exceptions, structures of even moderate complexity were not solvable from PXRD data alone. Global optimisation methods and highly-modified direct methods have transformed this situation by specifically exploiting some well-known properties of molecular compounds. This chapter will consider some of these properties.

  6. Compound odontoma

    Directory of Open Access Journals (Sweden)

    Monica Yadav

    2012-01-01

    Full Text Available Odontomas have been extensively reported in the dental literature, and the term refers to tumors of odontogenic origin. Though the exact etiology is still unknown, the postulated causes include: local trauma, infection, inheritance and genetic mutation. The majority of the lesions are asymptomatic; however, may be accompanied with pain and swelling as secondary complaints in some cases. Here, we report a case of a compound odontome in a 14 year old patient.

  7. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  8. Spintronics: Silicon takes a spin

    NARCIS (Netherlands)

    Jansen, Ron

    2007-01-01

    An efficient way to transport electron spins from a ferromagnet into silicon essentially makes silicon magnetic, and provides an exciting step towards integration of magnetism and mainstream semiconductor electronics.

  9. Thick silicon growth techniques

    Science.gov (United States)

    Bates, H. E.; Mlavsky, A. I.; Jewett, D. N.

    1973-01-01

    Hall mobility measurements on a number of single crystal silicon ribbons grown from graphite dies have shown some ribbons to have mobilities consistent with their resistivities. The behavior of other ribbons appears to be explained by the introduction of impurities of the opposite sign. Growth of a small single crystal silicon ribbon has been achieved from a beryllia dia. Residual internal stresses of the order of 7 to 18,000 psi have been determined to exist in some silicon ribbon, particularly those grown at rates in excess of 1 in./min. Growth experiments have continued toward definition of a configuration and parameters to provide a reasonable yield of single crystal ribbons. High vacuum outgassing of graphite dies and evacuation and backfilling of growth chambers have provided significant improvements in surface quality of ribbons grown from graphite dies.

  10. The electrophotonic silicon biosensor

    Science.gov (United States)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-09-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale.

  11. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  12. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  13. Silicon photonics: optical modulators

    Science.gov (United States)

    Reed, G. T.; Gardes, F. Y.; Hu, Youfang; Thomson, D.; Lever, L.; Kelsall, R.; Ikonic, Z.

    2010-01-01

    Silicon Photonics has the potential to revolutionise a whole raft of application areas. Currently, the main focus is on various forms of optical interconnects as this is a near term bottleneck for the computing industry, and hence a number of companies have also released products onto the market place. The adoption of silicon photonics for mass production will significantly benefit a range of other application areas. One of the key components that will enable silicon photonics to flourish in all of the potential application areas is a high performance optical modulator. An overview is given of the major Si photonics modulator research that has been pursued at the University of Surrey to date as well as a worldwide state of the art showing the trend and technology available. We will show the trend taken toward integration of optical and electronic components with the difficulties that are inherent in such a technology.

  14. Integrated Silicon Optoelectronics

    CERN Document Server

    Zimmermann, Horst K

    2010-01-01

    Integrated Silicon Optoelectronics synthesizes topics from optoelectronics and microelectronics. The book concentrates on silicon as the major base of modern semiconductor devices and circuits. Starting from the basics of optical emission and absorption, as well as from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed. Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included. The book, furthermore, contains a review of the newest state of research on eagerly anticipated silicon light emitters. In order to cover the topics comprehensively, also included are integrated waveguides, gratings, and optoelectronic power devices. Numerous elaborate illustrations facilitate and enhance comprehension. This extended edition will be of value to engineers, physicists, and scientists in industry and at universities. The book is also recommended to graduate student...

  15. Microgravity silicon zoning investigation

    Science.gov (United States)

    Kern, E. L.; Gill, G. L., Jr.

    1985-01-01

    The flow instabilities in floating zones of silicon were investigated and methods for investigation of these instabilities in microgravity were defined. Three principal tasks were involved: (1) characterization of the float zone in small diameter rods; (2) investigation of melt flow instabilities in circular melts in silicon disks; and (3) the development of a prototype of an apparatus that could be used in near term space experiments to investigate flow instabilities in a molten zone. It is shown that in a resistance heated zoner with 4 to 7 mm diameter silicon rods that the critical Marangoni number is about 1480 compared to a predicted value of 14 indicative that viable space experiments might be performed. The prototype float zone apparatus is built and specifications are prepared for a flight zoner should a decision be reached to proceed with a space flight experimental investigation.

  16. The LHCb Silicon Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

    2016-09-21

    The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

  17. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  18. The electrophotonic silicon biosensor

    Science.gov (United States)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-01-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale. PMID:27624590

  19. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  20. Spectral Transmittance of Di-methyl Silicon Oil as a Heat Transfer Material for Concentrator Solar Cells

    Institute of Scientific and Technical Information of China (English)

    张博阳; 王一平; 黄群武; 冯加和; 崔勇

    2015-01-01

    The accelerated life test was carried out to investigate the change of spectral transmittance of di-methyl silicon oil and the effects on the electrical performance of silicon solar cell. The di-methyl silicon oil samples be-fore and after accelerated life test were analyzed by FT-IR , GC-MS and LC-MS. The ring compounds and linear compounds with larger molecular weight were detected. The spectral transmittance of di-methyl silicon oil de-creased because the chromophore and auxochrome of the products made a sunlight receive decrease on the surface of the solar cell, and resulted in the reduction of cell performance. According to the decrease of spectral transmit-tance of di-methyl silicon oil, two recovery methods were proposed. The results showed that extraction was supe-rior to vacuum distillation in recovering the aged di-methyl silicon oil.

  1. The Silicon Cube detector

    Energy Technology Data Exchange (ETDEWEB)

    Matea, I.; Adimi, N. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France); Blank, B. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France)], E-mail: blank@cenbg.in2p3.fr; Canchel, G.; Giovinazzo, J. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France); Borge, M.J.G.; Dominguez-Reyes, R.; Tengblad, O. [Insto. Estructura de la Materia, CSIC, Serrano 113bis, E-28006 Madrid (Spain); Thomas, J.-C. [GANIL, CEA/DSM - CNRS/IN2P3, BP 55027, F-14076 Caen Cedex 5 (France)

    2009-08-21

    A new experimental device, the Silicon Cube detector, consisting of six double-sided silicon strip detectors placed in a compact geometry was developed at CENBG. Having a very good angular coverage and high granularity, it allows simultaneous measurements of energy and angular distributions of charged particles emitted from unbound nuclear states. In addition, large-volume Germanium detectors can be placed close to the collection point of the radioactive species to be studied. The setup is ideally suited for isotope separation on-line (ISOL)-type experiments to study multi-particle emitters and was tested during an experiment at the low-energy beam line of SPIRAL at GANIL.

  2. CMS silicon tracker developments

    Energy Technology Data Exchange (ETDEWEB)

    Civinini, C. E-mail: carlo.civinini@fi.infn.it; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D' Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell' Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B

    2002-01-21

    The CMS Silicon tracker consists of 70 m{sup 2} of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors.

  3. CMS silicon tracker developments

    CERN Document Server

    Civinini, C; Angarano, M M; Azzi, P; Babucci, E; Bacchetta, N; Bader, A; Bagliesi, G; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Buffini, A; Busoni, S; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Della Marina, R; Dutta, S; Eklund, C; Feld, L; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Frey, A; Fürtjes, A; Giassi, A; Giorgi, M; Giraldo, A; Glessing, B; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Honma, A; Hrubec, Josef; Huhtinen, M; Kaminski, A; Karimäki, V; König, S; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; Migliore, E; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Papi, A; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Radicci, V; Raffaelli, F; Raymond, M; Santocchia, A; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Starodumov, Andrei; Stavitski, I; Stefanini, G; Surrow, B; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Xie, Z; Li Ya Hong; Watts, S; Wittmer, B

    2002-01-01

    The CMS Silicon tracker consists of 70 m/sup 2/ of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors. (9 refs).

  4. Irradiation Defects in Silicon Crystal

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.

  5. Towards silicon speciation in light petroleum products using gas chromatography coupled to inductively coupled plasma mass spectrometry equipped with a dynamic reaction cell

    Energy Technology Data Exchange (ETDEWEB)

    Chainet, Fabien, E-mail: fabien.chainet@ifpen.fr [IFP Energies nouvelles, Rond-point de l' échangeur de Solaize, BP 3, 69360 Solaize (France); Lienemann, Charles-Philippe; Ponthus, Jeremie [IFP Energies nouvelles, Rond-point de l' échangeur de Solaize, BP 3, 69360 Solaize (France); Pécheyran, Christophe; Castro, Joaudimir; Tessier, Emmanuel; Donard, Olivier François Xavier [LCABIE-IPREM, UMR 5254, CNRS-UPPA, Helioparc, 2 av. Pr. Angot, 64053 Pau (France)

    2014-07-01

    Silicon speciation has recently gained interest in the oil and gas industry due to the significant poisoning problems caused by silicon on hydrotreatment catalysts. The poisoning effect clearly depends on the structure of the silicon species which must be determined and quantified. The hyphenation of gas chromatography (GC) coupled to inductively coupled plasma mass spectrometry (ICP-MS) allows a specific detection to determine the retention times of all silicon species. The aim of this work is to determine the retention indices of unknown silicon species to allow their characterization by a multi-technical approach in order to access to their chemical structure. The optimization of the dynamic reaction cell (DRC) of the ICP-MS using hydrogen as reactant gas successfully demonstrated the resolution of the interferences ({sup 14}N{sup 14}N{sup +} and {sup 12}C{sup 16}O{sup +}) initially present on {sup 28}Si. The linearity was excellent for silicon compounds and instrumental detection limits ranged from 20 to 140 μg of Si/kg depending on the response of the silicon compounds. A continuous release of silicon in the torch was observed most likely due to the use of a torch and an injector which was made of quartz. A non-universal response for silicon was observed and it was clearly necessary to use response coefficients to quantify silicon compounds. Known silicon compounds such as cyclic siloxanes (D{sub 3}–D{sub 16}) coming from PDMS degradation were confirmed. Furthermore, more than 10 new silicon species never characterized before in petroleum products were highlighted in polydimethylsiloxane (PDMS) degradation samples produced under thermal cracking of hydrocarbons. These silicon species mainly consisted of linear and cyclic structures containing reactive functions such as ethoxy, peroxide and hydroxy groups which can be able to react with the alumina surface and hence, poison the catalyst. This characterization will further allow the development of innovative

  6. Silicon carbide reinforced silicon carbide composite

    Science.gov (United States)

    Lau, Sai-Kwing (Inventor); Calandra, Salvatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    2001-01-01

    This invention relates to a process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  7. Pair distribution functions of silicon/silicon nitride interfaces

    Science.gov (United States)

    Cao, Deng; Bachlechner, Martina E.

    2006-03-01

    Using molecular dynamics simulations, we investigate different mechanical and structural properties of the silicon/silicon nitride interface. One way to characterize the structure as tensile strain is applied parallel to the interface is to calculate pair distribution functions for specific atom types. The pair distribution function gives the probability of finding a pair of atoms a distance r apart, relative to the probability expected for a completely random distribution at the same density. The pair distribution functions for bulk silicon nitride reflect the fracture of the silicon nitride film at about 8 % and the fact that the centerpiece of the silicon nitride film returns to its original structure after fracture. The pair distribution functions for interface silicon atoms reveal the formation of bonds for originally unbound atom pairs, which is indicative of the interstitial-vacancy defect that causes failure in silicon.

  8. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    has been an obstacle for a simple realization of electro-optic modulators, and its indirect band gap has prevented the realization of efficient silicon light emitting diodes and lasers. Still, significant progress has been made in the past few years. Electro-optic modulators based on the free carrier...

  9. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  10. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  11. Silicon Valley's Turnaround

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ During Silicon Valley's dramatic economic growth fueled by the Internet boom and business investment in information technology, employment in the region's high-tech sec tor tripled between 1995 and 2000. The economic boom gave rise to many new firms,drawing em ployees into high-tech jobs from other regions and other industries.

  12. Characterization of Silicon Carbide.

    Science.gov (United States)

    The various electrical and structural measurement techniques for silicon carbide are described. The electrical measurements include conductivity, resistivity, carrier concentration, mobility, doping energy levels, and lifetime. The structural measurements include polytype determination and crystalline perfection. Both bulk and epitaxial films are included.

  13. Composition Comprising Silicon Carbide

    Science.gov (United States)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  14. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  15. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  16. Silicon in beer and brewing.

    Science.gov (United States)

    Casey, Troy R; Bamforth, Charles W

    2010-04-15

    It has been claimed that beer is one of the richest sources of silicon in the diet; however, little is known of the relationship between silicon content and beer style and the manner in which beer is produced. The purpose of this study was to measure silicon in a diversity of beers and ascertain the grist selection and brewing factors that impact the level of silicon obtained in beer. Commercial beers ranged from 6.4 to 56.5 mg L(-1) in silicon. Products derived from a grist of barley tended to contain more silicon than did those from a wheat-based grist, likely because of the high levels of silica in the retained husk layer of barley. Hops contain substantially more silicon than does grain, but quantitatively hops make a much smaller contribution than malt to the production of beer and therefore relatively less silicon in beer derives from them. During brewing the vast majority of the silicon remains with the spent grains; however, aggressive treatment during wort production in the brewhouse leads to increased extraction of silicon into wort and much of this survives into beer. It is confirmed that beer is a very rich source of silicon. (c) 2010 Society of Chemical Industry.

  17. Magnesium compounds

    Science.gov (United States)

    Kramer, D.A.

    2012-01-01

    Seawater and natural brines accounted for about 57 percent of magnesium compounds produced in the United States in 2011. Dead-burned magnesia was produced by Martin Marietta Magnesia Specialties LLC from well brines in Michigan. Caustic-calcined magnesia was recovered from seawater by Premier Magnesia LLC in Florida, from well brines in Michigan by Martin Marietta and from magnesite in Nevada by Premier Magnesia. Intrepid Potash Wendover LLC and Great Salt Lake Minerals Corp. recovered magnesium chloride brines from the Great Salt Lake in Utah. Magnesium hydroxide was produced from seawater by SPI Pharma Inc. in Delaware and Premier Magnesia in Florida, and by Martin Marietta from its brine operation in Michigan.

  18. Analysis of copper-rich precipitates in silicon: chemical state,gettering, and impact on multicrystalline silicon solar cellmaterial

    Energy Technology Data Exchange (ETDEWEB)

    Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber,Eicke R.

    2004-11-08

    In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifying the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy (mu-XRF),and a segregation coefficient is determined from experimental data to beat least (1-2)'103. Additionally, mu-XAS data directly demonstrates that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

  19. Comparative infrared study of silicon and germanium nitrides

    Science.gov (United States)

    Baraton, M. I.; Marchand, R.; Quintard, P.

    1986-03-01

    Silicon and germanium nitride (Si 3N 4 and Ge 3N 4) are isomorphic compounds. They have been studied in the β-phase which crystallises in the hexagonal system. The space group is P6 3/m (C 6h2). The IR transmission spectra of these two nitrides are very similar but the absorption frequencies of germanium nitride are shifted to the lower values in comparison with silicon nitride. We noted that the atomic mass effect is the only cause of this shift for the streching modes but not for the bending modes.

  20. High aspect ratio transmission line circuits micromachined in silicon

    Science.gov (United States)

    Todd, Shane Truman

    The performance of complimentary metal-oxide-semiconductor (CMOS) monolithic microwave integrated circuits (MMICs) fabricated on silicon has improved dramatically. The scaling down of silicon transistors has increased the maximum frequency of transistors to the point where silicon MMICs have become a viable alternative to compound semiconductor MMICs in certain applications. A fundamental problem still exists in silicon MMICs however in that transmission lines fabricated on silicon can suffer from high loss due to the finite conductivity of the silicon substrate. A novel approach for creating low-loss transmission lines on silicon is presented in this work. Low-loss transmission lines are created on low resistivity silicon by using a micromachining method that combines silicon deep reactive ion etching (DRIE), thermal oxidation, electroplating, and planarization. Two types of high aspect ratio transmission lines are created with this method including high aspect ratio coplanar waveguide (hicoplanar) and semi-rectangular coaxial (semicoaxial). Transmission lines with impedances ranging from 20--80 O have been fabricated with minimum measured loss lower than 1 dB/cm at 67 GHz. Low-loss dielectrics are created for the high aspect ratio transmission lines using the mesa merging method. The mesa merging method works by creating silicon mesa arrays using DRIE and then converting and merging the mesa arrays into a solid oxide dielectric using thermal oxidation. The transmission lines are designed so that the fields penetrate the low-loss oxide dielectric and are isolated from the lossy silicon substrate. The mesa merging method has successfully created large volume oxide with depth up to 65 microm and width up to 240 microm in short oxidation times. Other advantages of the high aspect ratio transmission lines are demonstrated including low-loss over a wide impedance range, high isolation, and high coupling for coupled-line circuits. Transmission line models have been

  1. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  2. A silicon electromechanical photodetector

    CERN Document Server

    Tallur, Siddharth

    2013-01-01

    Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon micro-resonator, which converts near-IR optical intensity modulation at 174.2MHz and 1.198GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors.

  3. The CMS silicon tracker

    Energy Technology Data Exchange (ETDEWEB)

    Focardi, E. E-mail: focardi@pi.infn.it; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D' Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell' Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B

    2000-10-11

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction.

  4. Superhydrophobic Porous Silicon Surfaces

    Directory of Open Access Journals (Sweden)

    Paolo NENZI

    2011-12-01

    Full Text Available In this paper, we present an inexpensive technique to produce superhydrophobic surfaces from porous silicon. Superhydrophobic surfaces are a key technology for their ability to reduce friction losses in microchannels and their self cleaning properties. The morphology of a p-type silicon wafer is modified by a electrochemical wet etch to produce pores with controlled size and distribution and coated with a silane hydrophobic layer. Surface morphology is characterized by means of scanning electron microscope images. Large contact angles are observed on such surfaces and the results are compared with classical wetting models (Cassie and Wenzel suggesting a mixed Wenzel-Cassie behavior. The presented technique represents a cost-effective means for friction reduction in microfluidic applications, such as lab-on-a-chip.

  5. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Haematic silicon in drowning.

    Science.gov (United States)

    Pierucci, Giovanni; Merlano, Federica; Chen, Yao; Sturini, Michela; Maraschi, Federica; Profumo, Antonella

    2016-04-01

    The aim of this paper was to evaluate silicon (Si) concentration in human whole ventricular blood as a further potential chemical marker in the diagnosis of drowning. We employed an acidic digestion for the extraction of soluble Si, and an alkaline digestion for the determination of total Si, including particulate matter, both arising from drowning medium. 29 suspected drowning situations, 24 in fresh water (Fw) and 5 in seawater (Sw), were examined. The difference in Si concentration between the left and right ventricular blood (Si ΔL-R) was measured and alkaline Si ΔL-R seems, indeed, a potentially significant complementary tool in the diagnosis of Fw drowning, because insoluble silicon fraction does not undergo hemo-dilution or hemo-concentration, and the ΔL-R is not affected by exogenous factors. In spite of the limited number of cases investigated, a good correlation was observed between the analytical results and the macro-microscopic autoptic findings.

  7. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  8. Building China's Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    @@ Ellis Rahhal and Andrew Schorr sit across from each other in the minimalist office of their tech startup,all clean lines and white linoleum floors.A pair of toothbrushes hint at many a late night hunched over their computers.Outside the window,the sun is slowly setting behind jagged mountains.The scene is classic Silicon Valley.But Rahhal and Schorr aren't in California.They're in suburban Beijing.

  9. Silicon Containing Photoresists.

    Science.gov (United States)

    1987-11-13

    generation of high resolution patterns. The vast majority of the commercial positive photoresists are comprised of a base soluble Novolac type resin (Cresol...plays a passive role. The generation of silicon containing Novolac- type resins represents one such effort. Workers at AT&T Bell Labs have prepared a...and formaldehyde (20). The silylated Novolac type resins were designed for use with substituted 1,2-napthoquinone-2-diazide sensitizers employed in

  10. Bringing Silicon Valley inside.

    Science.gov (United States)

    Hamel, G

    1999-01-01

    In 1998, Silicon Valley companies produced 41 IPOs, which by January 1999 had a combined market capitalization of $27 billion--that works out to $54,000 in new wealth creation per worker in a single year. Multiply the number of employees in your company by $54,000. Did your business create that much new wealth last year? Half that amount? It's not a group of geniuses generating such riches. It's a business model. In Silicon Valley, ideas, capital, and talent circulate freely, gathering into whatever combinations are most likely to generate innovation and wealth. Unlike most traditional companies, which spend their energy in resource allocation--a system designed to avoid failure--the Valley operates through resource attraction--a system that nurtures innovation. In a traditional company, people with innovative ideas must go hat in hand to the guardians of the old ideas for funding and for staff. But in Silicon Valley, a slew of venture capitalists vie to attract the best new ideas, infusing relatively small amounts of capital into a portfolio of ventures. And talent is free to go to the companies offering the most exhilarating work and the greatest potential rewards. It should actually be easier for large, traditional companies to set up similar markets for capital, ideas, and talent internally. After all, big companies often already have extensive capital, marketing, and distribution resources, and a first crack at the talent in their own ranks. And some of them are doing it. The choice is yours--you can do your best to make sure you never put a dollar of capital at risk, or you can tap into the kind of wealth that's being created every day in Silicon Valley.

  11. Silicon photonics manufacturing.

    Science.gov (United States)

    Zortman, William A; Trotter, Douglas C; Watts, Michael R

    2010-11-08

    Most demonstrations in silicon photonics are done with single devices that are targeted for use in future systems. One of the costs of operating multiple devices concurrently on a chip in a system application is the power needed to properly space resonant device frequencies on a system's frequency grid. We asses this power requirement by quantifying the source and impact of process induced resonant frequency variation for microdisk resonators across individual die, entire wafers and wafer lots for separate process runs. Additionally we introduce a new technique, utilizing the Transverse Electric (TE) and Transverse Magnetic (TM) modes in microdisks, to extract thickness and width variations across wafers and dice. Through our analysis we find that a standard six inch Silicon on Insulator (SOI) 0.35 μm process controls microdisk resonant frequencies for the TE fundamental resonances to within 1 THz across a wafer and 105 GHz within a single die. Based on demonstrated thermal tuner technology, a stable manufacturing process exhibiting this level of variation can limit the resonance trimming power per resonant device to 231 μW. Taken in conjunction with the power to compensate for thermal environmental variations, the expected power requirement to compensate for fabrication-induced non-uniformities is 17% of that total. This leads to the prediction that thermal tuning efficiency is likely to have the most dominant impact on the overall power budget of silicon photonics resonator technology.

  12. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  13. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  14. Electrochemical deposition of zinc selenide and cadmium selenide onto porous silicon from aqueous acidic solutions

    Energy Technology Data Exchange (ETDEWEB)

    Chubenko, E.B., E-mail: eugene.chubenko@gmail.co [Department of Micro and Nanoelectronics, Belarusian State University of Informatics and Radioelectronics, Minsk 220013 (Belarus); Klyshko, A.A.; Petrovich, V.A.; Bondarenko, V.P. [Department of Micro and Nanoelectronics, Belarusian State University of Informatics and Radioelectronics, Minsk 220013 (Belarus)

    2009-09-01

    An electrochemical deposition process of ZnSe and CdSe compound semiconductors from aqueous acidic solutions onto silicon substrates with porous silicon layers formed on their surfaces was studied by the voltammetry method. The experimental data obtained were compared with the deposition data onto metal and silicon substrates, and the optimal conditions for the binary compound deposition onto porous silicon were determined. Semiconductor films deposited were studied by scanning electron microscopy, X-ray diffractometry, and X-ray microanalysis. The films are shown to have the crystalline structure and a nearly stoichiometric composition with a minor Se excess. Further annealing in air for 15 min allowed the Se concentration to be decreased.

  15. Physicotechnological aspects of low-voltage suppressors developement on the silicon base

    Directory of Open Access Journals (Sweden)

    Rakhmatov A. Z.

    2010-10-01

    Full Text Available It is shown that by arsenic diffusion alloying of silicon plates in conditions of deaerated quartz ampoule the most effective is the use of a compound source in the form of crystal arsenic and silicon powder of boron-implanted silicon grade with base impurity (boron concentration not less than the concentration of base impurity in alloyed silicon plates. The work defines experimental values of surface concentration, proper and effective diffusion coefficients that fit diffision conditions of As inside ampoule for 2 h at temperature 1423 K and pressure of As steams of 2·105 Pa. The received results are of interest in designing and producing of low-voltage (less than 7 V suppressors on the silicon base.

  16. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  17. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  18. Single crystalline mesoporous silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  19. Social Networks in Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ Social network is a dominant, distinguishing characteristic of Silicon Valley. Because innovation entails coping with a high degree of uncertainty,such innovation is particularly dependent on networks.

  20. Large Brillouin Amplification in Silicon

    CERN Document Server

    Kittlaus, Eric A; Rakich, Peter T

    2015-01-01

    Strong Brillouin coupling has only recently been realized in silicon using a new class of optomechanical waveguides that yield both optical and phononic confinement. Despite these major advances, appreciable Brillouin amplification has yet to be observed in silicon. Using a new membrane-suspended silicon waveguide we report large Brillouin amplification for the first time, reaching levels greater than 5 dB for modest pump powers, and demonstrate a record low (5 mW) threshold for net amplification. This work represents a crucial advance necessary to realize high-performance Brillouin lasers and amplifiers in silicon.

  1. Nanoscale doping of compound semiconductors by solid phase dopant diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Jaehyun, E-mail: jaehyun.ahn@utexas.edu; Koh, Donghyi; Roy, Anupam; Banerjee, Sanjay K., E-mail: banerjee@ece.utexas.edu [Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Chou, Harry [Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712 (United States); Kim, Taegon [Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Semiconductor R& D Center, Samsung Electronics Corporation, 1 Samsungjeonja-ro, Hwasung, Kyounggi 445-330 (Korea, Republic of); Song, Jonghan [Advanced Analysis Center, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, Seoul 130-650 (Korea, Republic of)

    2016-03-21

    Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping ΙΙΙ-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiO{sub x}) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the deposited film thickness and thermal annealing parameters, giving active carrier concentration of 1.4 × 10{sup 18 }cm{sup −3}. Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping.

  2. Compound Droplet Levitation for Lab-on-a-Chip

    Science.gov (United States)

    Black, James; Neitzel, G. Paul

    2016-11-01

    A fluid transport mechanism utilizing thermocapillarity has been previously shown to successfully levitate and translate both microliter- and nanoliter-volume droplets of silicone oil. The surface flow required to drive levitation and transport has not been achieved for aqueous droplets, and encapsulation of samples within a layer of silicone oil is necessary. A droplet-on-demand generator capable of producing nanoliter-volume compound droplets has been developed and previously reported. The work presented here discusses efforts to demonstrate the applicability of this microfluidic transport mechanism to lab-on-a-chip systems. We elaborate on translation speeds of single-phase, nanoliter-volume, silicone-oil droplets. Compound droplets of varying compositions of oil and water are then generated, captured, levitated, and merged to explore the composition limits thereof. Work supported by NSF and NASA.

  3. Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

    Science.gov (United States)

    Rustioni, M.; Margadonna, D.; Pirazzi, R.; Pizzini, S.

    1986-01-01

    A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

  4. Silicone Resin Applications for Ceramic Precursors and Composites

    Directory of Open Access Journals (Sweden)

    Masaki Narisawa

    2010-06-01

    Full Text Available This article reviews the applications of silicone resins as ceramic precursors. The historical background of silicone synthesis chemistry is introduced to explain the production costs and supply availability of various silicones. Thermal degradation processes of silicones are classified in terms of the main chain structure and cyclic oligomer expulsion process, which determine the resulting ceramic yield and the chemical composition. The high temperature decomposition of Si-O-C beyond 1,400 °C in an inert atmosphere and formation of a protective silica layer on material surfaces beyond 1,200 °C in an oxidative atmosphere are discussed from the viewpoints of the wide chemical composition of the Si-O-C materials. Applications of the resins for binding agents, as starting materials for porous ceramics, matrix sources with impregnation, fiber spinning and ceramic adhesions are introduced. The recent development of the process of filler or cross-linking agent additions to resin compounds is also introduced. Such resin compounds are useful for obtaining thick coatings, MEMS parts and bulk ceramics, which are difficult to obtain by pyrolysis of simple organometallic precursors without additives.

  5. Soft chemical synthesis of silicon nanosheets and their applications

    Science.gov (United States)

    Nakano, Hideyuki; Ikuno, Takashi

    2016-12-01

    Two-dimensional silicon nanomaterials are expected to show different properties from those of bulk silicon materials by virtue of surface functionalization and quantum size effects. Since facile fabrication processes of large area silicon nanosheets (SiNSs) are required for practical applications, a development of soft chemical synthesis route without using conventional vacuum processes is a challenging issue. We have recently succeeded to prepare SiNSs with sub-nanometer thicknesses by exfoliating layered silicon compounds, and they are found to be composed of crystalline single-atom-thick silicon layers. In this review, we present the synthesis and modification methods of SiNSs. These SiNSs have atomically flat and smooth surfaces due to dense coverage of organic moieties, and they are easily self-assembled in a concentrated state to form a regularly stacked structure. We have also characterized the electron transport properties and the electronic structures of SiNSs. Finally, the potential applications of these SiNSs and organic modified SiNSs are also reviewed.

  6. Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Gritsenko, V A [Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2008-07-31

    In addition to amorphous SiO{sub 2} and Si{sub 3}N{sub 4}, the two key dielectric film materials used in modern silicon devices, the fabrication technology of nonstoichiometric SiO{sub x}N{sub y}, SiN{sub x}, and SiO{sub x} compounds is currently under development. Varying the chemical composition of these compounds allows a wide range of control over their physical - specifically, optical and electrical - properties. The development of technology for synthesizing such films requires a detailed understanding of their atomic structure. Current views on the atomic structure of nonstoichiometric silicon nitrides and oxides are reviewed and summarized. (reviews of topical problems)

  7. Silicon on insulator with active buried regions

    Science.gov (United States)

    McCarthy, A.M.

    1996-01-30

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  8. New process of silicon carbide purification intended for silicon passivation

    Science.gov (United States)

    Barbouche, M.; Zaghouani, R. Benabderrahmane; Benammar, N. E.; Aglieri, V.; Mosca, M.; Macaluso, R.; Khirouni, K.; Ezzaouia, H.

    2017-01-01

    In this work, we report on a new, efficient and low cost process of silicon carbide (SiC) powder purification intended to be used in photovoltaic applications. This process consists on the preparation of porous silicon carbide layers followed by a photo-thermal annealing under oxygen atmosphere and chemical treatment. The effect of etching time on impurities removal efficiency was studied. Inductively coupled plasma atomic emission spectrometry (ICP-AES) results showed that the best result was achieved for an etching time of 10 min followed by gettering at 900 °C during 1 h. SiC purity is improved from 3N (99.9771%) to 4N (99.9946%). Silicon carbide thin films were deposited onto silicon substrates by pulsed laser deposition technique (PLD) using purified SiC powder as target. Significant improvement of the minority carrier lifetime was obtained encouraging the use of SiC as a passivation layer for silicon.

  9. Silicon Utilizing Microbial Bioactivities in the Biosphere

    Science.gov (United States)

    Sen, M. M.; Das, S.

    2012-12-01

    Diatoms are unicellular eukaryotic algae and an important member of the silicon utilizing organisms, that generate ~20% of the ~100 billion metric tons of organic carbon produced through photosynthesis on Earth each year. Fragilariopsis is a dominating psychrophilic diatom genus in polar sea ice. The two species Fragilariopsis cylindrus and Fragilariopsis curta are able to grow and divide below freezing temperature. Antifreeze proteins (AFPs), involved in cold adaptation in several psychrophilic organisms, are widespread in this two polar species. Achanthes minutissima isolated as dominant diatom has degradable effects involving petroleum hydocarbons. Phaeodactylum tricornutum, have antibacterial activity and the fatty acid, eicosapentaenoic acid (EPA), has been identified as one compound responsible for this activity. Other antibacterial compounds are monounsaturated fatty acid (9Z)-hexadecenoic acid (palmitoleic acid; C16:1 n-7) and the relatively unusual polyunsaturated fatty acid (6Z, 9Z, 12Z)-hexadecatrienoic acid (HTA; C16:3 n-4). Both are active against Gram-positive bacteria and many Gram-negative pathogen. Palmitoleic acid is active at micro-molar concentrations, kills bacteria rapidly, and is highly active against multidrug-resistant Staphylococcus aureus. Domoic acid -a neurotoxin produced by Pseudo-nitzschia accumulates in marine invertebrates. Evidences of sea lion (Zalophus californianus) and human poisoning following consumption of contaminated blue mussels (Mytilus edulis) is mainly due to this toxin. Among the most prominent features described in human beings was memory impairment which led to the name Amnesic Shellfish Poisoning [ASP]. Silicon utilizing organisms can act as a bioindicator of environmental contamination, thus a rapid change in phytochelatins to both the increase in and the withdrawal of environmental Cd stress was found in Thalassiosira nordenskioeldii. Some of them also can produce biofuels particularly diatoms have significant

  10. Silicon production process evaluations

    Science.gov (United States)

    1982-01-01

    Chemical engineering analyses involving the preliminary process design of a plant (1,000 metric tons/year capacity) to produce silicon via the technology under consideration were accomplished. Major activities in the chemical engineering analyses included base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provided detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process.

  11. Edgeless silicon pad detectors

    Science.gov (United States)

    Perea Solano, B.; Abreu, M. C.; Avati, V.; Boccali, T.; Boccone, V.; Bozzo, M.; Capra, R.; Casagrande, L.; Chen, W.; Eggert, K.; Heijne, E.; Klauke, S.; Li, Z.; Mäki, T.; Mirabito, L.; Morelli, A.; Niinikoski, T. O.; Oljemark, F.; Palmieri, V. G.; Rato Mendes, P.; Rodrigues, S.; Siegrist, P.; Silvestris, L.; Sousa, P.; Tapprogge, S.; Trocmé, B.

    2006-05-01

    We report measurements in a high-energy pion beam of the sensitivity of the edge region in "edgeless" planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5±8 stat..±6 syst.) μm.

  12. Edgeless silicon pad detectors

    Energy Technology Data Exchange (ETDEWEB)

    Perea Solano, B. [CERN, CH-1211 Geneva 23 (Switzerland)]. E-mail: blanca.perea.solano@cern.ch; Abreu, M.C. [LIP and University of Algarve, 8000 Faro (Portugal); Avati, V. [CERN, CH-1211 Geneva 23 (Switzerland); Boccali, T. [INFN Sez. di Pisa and Scuola Normale Superiore, Pisa (Italy); Boccone, V. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Bozzo, M. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Capra, R. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Casagrande, L. [INFN Sez. di Roma 2 and Universita di Roma 2, Rome (Italy); Chen, W. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Eggert, K. [CERN, CH-1211 Geneva 23 (Switzerland); Heijne, E. [CERN, CH-1211 Geneva 23 (Switzerland); Klauke, S. [CERN, CH-1211 Geneva 23 (Switzerland); Li, Z. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Maeki, T. [Helsinki Institute of Physics, Helsinki (Finland); Mirabito, L. [CERN, CH-1211 Geneva 23 (Switzerland); Morelli, A. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Niinikoski, T.O. [CERN, CH-1211 Geneva 23 (Switzerland); Oljemark, F. [Helsinki Institute of Physics, Helsinki (Finland); Palmieri, V.G. [Helsinki Institute of Physics, Helsinki (Finland); Rato Mendes, P. [LIP and University of Algarve, 8000 Faro (Portugal); Rodrigues, S. [LIP and University of Algarve, 8000 Faro (Portugal); Siegrist, P. [CERN, CH-1211 Geneva 23 (Switzerland); Silvestris, L. [INFN Sez. Di Bari, Bari (Italy); Sousa, P. [LIP and University of Algarve, 8000 Faro (Portugal); Tapprogge, S. [Helsinki Institute of Physics, Helsinki (Finland); Trocme, B. [Institut de Physique Nucleaire, Villeurbanne (France)

    2006-05-01

    We report measurements in a high-energy pion beam of the sensitivity of the edge region in 'edgeless' planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5{+-}8{sub stat.}.{+-}6{sub syst.}) {mu}m.

  13. The LHCb Silicon Tracker

    CERN Document Server

    Elsasser, Ch; Gallas Torreira, A; Pérez Trigo, A; Rodríguez Pérez, P; Bay, A; Blanc, F; Dupertuis, F; Haefeli, G; Komarov, I; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, A; Britsch, M; Schmelling, M; Voss, H; Okhrimenko, O; Pugatch, V

    2013-01-01

    The aim of the LHCb experiment is to study rare heavy quark decays and CP vio- lation with the high rate of beauty and charmed hadrons produced in $pp$ collisions at the LHC. The detector is designed as a single-arm forward spectrometer with excellent tracking and particle identification performance. The Silicon Tracker is a key part of the tracking system to measure the particle trajectories to high precision. This paper reports the performance as well as the results of the radiation damage monitoring based on leakage currents and on charge collection efficiency scans during the data taking in the LHC Run I.

  14. Light Emitting Porous Silicon

    Science.gov (United States)

    1993-05-01

    ml - mm m lm m ~ m m ThO report Page 14 preparation method which has been originally described by Wohler [23] leads to a bright yellow substance with...Solid State Commun. 81, 307 (1992). [221 H. Kautsky, and H. Zocher, Z. Phys. 9,267 (1992). L TNO report Page 28 [231 F. Wohler , Lieb. Ann. 127, 275 (1863...Netherlands Fax + 31 70 328 09 61 Phone + 31 70 326 42 21 TNO- report copy no. e FEL-93eo047r Lh Emitting Porous Silicon sitho(s): DTICHMi.P.Th

  15. Silicon carbide sewing thread

    Science.gov (United States)

    Sawko, Paul M. (Inventor)

    1995-01-01

    Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems provide lightweight thermal insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.

  16. Silicon Valley Lifestyle

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ As we embrace the rapid developments of the new media age,competitiveness in the field of internet and computer technology is an increasingly crucial factor in stimulating new business,jobs and new industry in the region.Accelerating advancements in new media,internet,software and computer technologies offer new commercial opportunities and sources of economic revenue. Silicon Valley has been a model of the new age since its existence.While the dream place not only has a unique business model,but also has a very special lifestyle.

  17. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  18. Hydrodynamic slip in silicon nanochannels

    Science.gov (United States)

    Ramos-Alvarado, Bladimir; Kumar, Satish; Peterson, G. P.

    2016-03-01

    Equilibrium and nonequilibrium molecular dynamics simulations were performed to better understand the hydrodynamic behavior of water flowing through silicon nanochannels. The water-silicon interaction potential was calibrated by means of size-independent molecular dynamics simulations of silicon wettability. The wettability of silicon was found to be dependent on the strength of the water-silicon interaction and the structure of the underlying surface. As a result, the anisotropy was found to be an important factor in the wettability of these types of crystalline solids. Using this premise as a fundamental starting point, the hydrodynamic slip in nanoconfined water was characterized using both equilibrium and nonequilibrium calculations of the slip length under low shear rate operating conditions. As was the case for the wettability analysis, the hydrodynamic slip was found to be dependent on the wetted solid surface atomic structure. Additionally, the interfacial water liquid structure was the most significant parameter to describe the hydrodynamic boundary condition. The calibration of the water-silicon interaction potential performed by matching the experimental contact angle of silicon led to the verification of the no-slip condition, experimentally reported for silicon nanochannels at low shear rates.

  19. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  20. Silicon supply modifies C:N:P stoichiometry and growth of Phragmites australis.

    Science.gov (United States)

    Schaller, J; Brackhage, C; Gessner, M O; Bäuker, E; Gert Dudel, E

    2012-03-01

    Silicon is a non-essential element for plant growth. Nevertheless, it affects plant stress resistance and in some plants, such as grasses, it may substitute carbon (C) compounds in cell walls, thereby influencing C allocation patterns and biomass production. How variation in silicon supply over a narrow range affects nitrogen (N) and phosphorus (P) uptake by plants has also been investigated in some detail. However, little is known about effects on the stoichiometric relationships between C, N and P when silicon supply varies over a broader range. Here, we assessed the effect of silicon on aboveground biomass production and C:N:P stoichiometry of common reed, Phragmites australis, in a pot experiment in which three widely differing levels of silicon were supplied. Scanning electron microscopy (SEM) showed that elevated silicon supply promoted silica deposition in the epidermis of Phragmites leaves. This resulted in altered N:P ratios, whereas C:N ratios changed only slightly. Plant growth was slightly (but not significantly) enhanced at intermediate silicon supply levels but significantly decreased at high levels. These findings point to the potential of silicon to impact plant growth and elemental stoichiometry and, by extension, to affect biogeochemical cycles in ecosystems dominated by Phragmites and other grasses and sedges.

  1. Metal/metalloid fixation by litter during decomposition affected by silicon availability during plant growth.

    Science.gov (United States)

    Schaller, Jörg

    2013-03-01

    Organic matter is known to accumulate high amounts of metals/metalloids, enhanced during the process of decomposition by heterotrophic biofilms (with high fixation capacity for metals/metalloids). The colonization by microbes and the decay rate of the organic matter depends on different litter properties. Main litter properties affecting the decomposition of organic matter such as the nutrient ratios and the content of cellulose, lignin and phenols are currently described to be changed by silicon availability. But less is known about the impact of silicon availability during plant growth on elemental fixation during decay. Hence, this research focuses on the impact of silicon availability during plant growth on fixation of 42 elements during litter decay, by controlling the litter properties. The results of this experiment are a significantly higher metal/metalloid accumulation during decomposition of plant litter grown under low silicon availability. This may be explained by the altered litter properties (mainly nutrient content) affecting the microbial decomposition of the litter, the microbial growth on the litter and possibly by the silicon double layer, which is evident in leaf litter with high silicon content and reduces the binding sites for metals/metalloids. Furthermore, this silicon double layer may also reduce the growing biofilm by reducing the availability of carbon compounds at the litter surface and has to be elucidated in further research. Hence, low silicon availability during plant growth enhances the metal/metalloid accumulation into plant litter during aquatic decomposition.

  2. Growth of silicon sheets from metallurgical-grade silicon

    Science.gov (United States)

    Ciszek, T.; Schietzelt, M.; Kazmerski, L. L.; Hurd, J. L.; Fernelius, B.

    1981-05-01

    Impure silicon is difficult to solidify in sheet form because of morphological proturberances which may result from constitutional supercooling. Sheet growth methods which require a specific crystallographic orientation or which are characterized by a narrow melt meniscus are most affected by this problem. The edge-supported pulling technique was applied to sheet growth of metallurgical grade silicon and DAR (Direct Arc Reactor) silicon. The 7 mm meniscus height associated with this technique allowed the growth of 5 cm wide sheets from both materials. In each case, the sheets were p-type.

  3. Lipid membranes on nanostructured silicon.

    Energy Technology Data Exchange (ETDEWEB)

    Slade, Andrea Lynn; Lopez, Gabriel P. (University of New Mexico, Albuquerque, NM); Ista, Linnea K. (University of New Mexico, Albuquerque, NM); O' Brien, Michael J. (University of New Mexico, Albuquerque, NM); Sasaki, Darryl Yoshio; Bisong, Paul (University of New Mexico, Albuquerque, NM); Zeineldin, Reema R. (University of New Mexico, Albuquerque, NM); Last, Julie A.; Brueck, Stephen R. J. (University of New Mexico, Albuquerque, NM)

    2004-12-01

    A unique composite nanoscale architecture that combines the self-organization and molecular dynamics of lipid membranes with a corrugated nanotextured silicon wafer was prepared and characterized with fluorescence microscopy and scanning probe microscopy. The goal of this project was to understand how such structures can be assembled for supported membrane research and how the interfacial interactions between the solid substrate and the soft, self-assembled material create unique physical and mechanical behavior through the confinement of phases in the membrane. The nanometer scale structure of the silicon wafer was produced through interference lithography followed by anisotropic wet etching. For the present study, a line pattern with 100 nm line widths, 200 nm depth and a pitch of 360 nm pitch was fabricated. Lipid membranes were successfully adsorbed on the structured silicon surface via membrane fusion techniques. The surface topology of the bilayer-Si structure was imaged using in situ tapping mode atomic force microscopy (AFM). The membrane was observed to drape over the silicon structure producing an undulated topology with amplitude of 40 nm that matched the 360 nm pitch of the silicon structure. Fluorescence recovery after photobleaching (FRAP) experiments found that on the microscale those same structures exhibit anisotropic lipid mobility that was coincident with the silicon substructure. The results showed that while the lipid membrane maintains much of its self-assembled structure in the composite architecture, the silicon substructure indeed influences the dynamics of the molecular motion within the membrane.

  4. Friction, wear, and thermal stability studies of some organotin and organosilicon compounds

    Science.gov (United States)

    Jones, W. R., Jr.

    1973-01-01

    Thermal decomposition temperatures were determined for a number of organotin and organosilicon compounds. A ball-on-disk sliding friction apparatus was used to determine the friction and wear characteristics of two representative compounds, (1) 3-tri-n-butylstannyl (diphenyl) and (2) 3-tri-n-butylsilyl (diphenyl). Friction and wear test conditions included a 1-kg load, 25 to 225 C disk temperatures, and a dry air atmosphere. The tin and silicon compounds yielded friction and wear results either lower than or similar to those obtained with a polyphenyl ether and a C-ether. The maximum thermal decomposition temperatures obtained in the silicon and tin series were 358 and 297 C, respectively. Increasing the steric hindrance around the silicon or tin atoms increased the thermal stability. Future work with these compounds will emphasize their use as antiwear additives rather than base fluids.

  5. Silicon: Child and Progenitor of Revolution

    Science.gov (United States)

    Cahn, R. W.

    Antoine Lavoisier, the pioneering French chemist who (together with Joseph Priestley in England) identified oxygen as an element and gave it its name, in 1789 concluded that quartz was probably a compound with an as-yet undiscovered but presumably extremely common element. That was also the year in which the French Revolution broke out. Five years later, the Jacobins accused Lavoisier of offences against the people and cut off his head, thereby nearly cutting off the new chemistry. It was not until 1824 that Jöns Berzelius in Sweden succeeded in confirming Lavoisier's speculation by isolating silicon. Argument at once broke out among the scientific elite as to whether the newly found element was a metal or an insulator. It took more than a century to settle that disagreement decisively: As so often, when all-or-nothing alternatives are fiercely argued, the truth turned out to be neither all nor nothing.

  6. Single crystalline mesoporous silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hochbaum, A.I.; Gargas, Daniel; Jeong Hwang, Yun; Yang, Peidong

    2009-08-04

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  7. Ideal anodization of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Yamani, Z.; Thompson, W.H.; AbuHassan, L.; Nayfeh, M.H. [Department of Physics, University of Illinois at Urbana-Champaign, 1110 W. Green Street, Urbana, Illinois 61801 (United States)

    1997-06-01

    Silicon has been anodized such that the porous layer is passivated with a homogeneous stretching phase by incorporating H{sub 2}O{sub 2} in the anodization mixture. Fourier transform infrared spectroscopy measurements show that the Si{endash}H stretching mode oriented perpendicular to the surface at {approximately}2100cm{sup {minus}1} dominates the spectrum with negligible contribution from the bending modes in the 600{endash}900cm{sup {minus}1} region. Material analysis using Auger electron spectroscopy shows that the samples have very little impurities, and that the luminescent layer is very thin (5{endash}10 nm). Scanning electron microscopy shows that the surface is smoother with features smaller than those of conventional samples. {copyright} {ital 1997 American Institute of Physics.}

  8. Silicon force sensor

    Science.gov (United States)

    Galambos, Paul C.; Crenshaw, Thomas B.; Nishida, Erik E.; Burnett, Damon J.; Lantz, Jeffrey W.

    2016-07-05

    The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

  9. Monolithic silicon bolometers

    Science.gov (United States)

    Downey, P. M.; Jeffries, A. D.; Meyer, S. S.; Weiss, R.; Bachner, F. J.; Donnelly, J. P.; Lindley, W. T.; Mountain, R. W.; Silversmith, D. J.

    1984-01-01

    A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.

  10. Nanometre-scale electronics with III-V compound semiconductors.

    Science.gov (United States)

    del Alamo, Jesús A

    2011-11-16

    For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal-oxide-semiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III-V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors.

  11. Automated silicon module assembly for the CMS silicon tracker

    CERN Document Server

    Surrow, B

    2001-01-01

    The CMS silicon tracker requires the assembly of about 20000 individual silicon detector modules. To ensure the assembly of such an amount with high, reproducible quality, an automated procedure has been developed for module assembly based on a high-precision robotic positioning machine. This procedure allows a much higher throughput and will result in much reduced manpower requirements than for traditional manual techniques. (1 refs).

  12. Integrated silicon and silicon nitride photonic circuits on flexible substrates.

    Science.gov (United States)

    Chen, Yu; Li, Mo

    2014-06-15

    Flexible integrated photonic devices based on crystalline materials on plastic substrates have a promising potential in many unconventional applications. In this Letter, we demonstrate a fully integrated photonic system including ring resonators and grating couplers, based on both crystalline silicon and silicon nitride, on flexible plastic substrate by using the stamping-transfer method. A high yield has been achieved by a simple, yet reliable transfer method without significant performance degradation.

  13. Acute pneumonitis secondary to subcutaneous silicone injection

    Directory of Open Access Journals (Sweden)

    Gopie P

    2011-06-01

    Full Text Available Priya Gopie, Sateesh Sakhamuri, Anu Sharma, Sanjeev Solomon, Surujpal TeelucksinghClinical Medical Sciences, University of the West Indies, St Augustine, TrinidadAbstract: Following silicone injection, end organ toxicity can occur. To our knowledge this report documents the first case of silicone embolization in the Caribbean and serves to highlight an emergent danger associated with its illicit use for cosmetic purposes in this region.Keywords: silicone, silicone embolism, silicone pneumonitis, alveolar hemorrhage, pneumonitis

  14. Silicon Holder For Molecular-Beam Epitaxy

    Science.gov (United States)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  15. Studies of silicon carbide and silicon carbide nitride thin films

    Science.gov (United States)

    Alizadeh, Zhila

    Silicon carbide semiconductor technology is continuing to advance rapidly. The excellent physical and electronic properties of silicon carbide recently take itself to be the main focused power device material for high temperature, high power, and high frequency electronic devices because of its large band gap, high thermal conductivity, and high electron saturation drift velocity. SiC is more stable than Si because of its high melting point and mechanical strength. Also the understanding of the structure and properties of semiconducting thin film alloys is one of the fundamental steps toward their successful application in technologies requiring materials with tunable energy gaps, such as solar cells, flat panel displays, optical memories and anti-reflecting coatings. Silicon carbide and silicon nitrides are promising materials for novel semiconductor applications because of their band gaps. In addition, they are "hard" materials in the sense of having high elastic constants and large cohesive energies and are generally resistant to harsh environment, including radiation. In this research, thin films of silicon carbide and silicon carbide nitride were deposited in a r.f magnetron sputtering system using a SiC target. A detailed analysis of the surface chemistry of the deposited films was performed using x-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy whereas structure and morphology was studied atomic force microscopy (AFM), and nonoindentation.

  16. Interior phase transformations and mass-radius relationships of silicon-carbon planets

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Hugh F. [CSIRO Materials Science and Engineering, Parkville, Victoria 3052 (Australia); Militzer, Burkhard, E-mail: hughfw@gmail.com [Department of Earth and Planetary Science and Department of Astronomy, University of California, Berkeley, CA 94720 (United States)

    2014-09-20

    Planets such as 55 Cancri e orbiting stars with a high carbon-to-oxygen ratio may consist primarily of silicon and carbon, with successive layers of carbon, silicon carbide, and iron. The behavior of silicon-carbon materials at the extreme pressures prevalent in planetary interiors, however, has not yet been sufficiently understood. In this work, we use simulations based on density functional theory to determine high-pressure phase transitions in the silicon-carbon system, including the prediction of new stable compounds with Si{sub 2}C and SiC{sub 2} stoichiometry at high pressures. We compute equations of state for these silicon-carbon compounds as a function of pressure, and hence derive interior structural models and mass-radius relationships for planets composed of silicon and carbon. Notably, we predict a substantially smaller radius for SiC planets than in previous models, and find that mass radius relationships for SiC planets are indistinguishable from those of silicate planets. We also compute a new equation of state for iron. We rederive interior models for 55 Cancri e and are able to place more stringent restrictions on its composition.

  17. Characterization of silicon-silicon carbide ceramic derived from carbon-carbon silicon carbide composites

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Vijay K. [Indian Institute of Technology, Varanasi (India). Dept. of Mechanical Engineering; Krenkel, Walter [Univ. of Bayreuth (Germany). Dept. of Ceramic Materials Engineering

    2013-04-15

    The main objective of the present work is to process porous silicon - silicon carbide (Si - SiC) ceramic by the oxidation of carboncarbon silicon carbide (C/C - SiC) composites. Phase studies are performed on the oxidized porous composite to examine the changes due to the high temperature oxidation. Further, various characterization techniques are performed on Si- SiC ceramics in order to study the material's microstructure. The effects of various parameters such as fiber alignment (twill weave and short/chopped fiber) and phenolic resin type (resol and novolak) are characterized.

  18. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

  19. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  20. The History of Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ Just as Manchester was once the center for indus trial progress, the microelectronics industry also has a heartland. Silicon Valley is located in a thirty by ten miles strip between San Francisco and San Jose,California.

  1. Optical information capacity of silicon

    CERN Document Server

    Dimitropoulos, Dimitris

    2014-01-01

    Modern computing and data storage systems increasingly rely on parallel architectures where processing and storage load is distributed within a cluster of nodes. The necessity for high-bandwidth data links has made optical communication a critical constituent of modern information systems and silicon the leading platform for creating the necessary optical components. While silicon is arguably the most extensively studied material in history, one of its most important attributes, an analysis of its capacity to carry optical information, has not been reported. The calculation of the information capacity of silicon is complicated by nonlinear losses, phenomena that emerge in optical nanowires as a result of the concentration of optical power in a small geometry. Nonlinear losses are absent in silica glass optical fiber and other common communication channels. While nonlinear loss in silicon is well known, noise and fluctuations that arise from it have never been considered. Here we report sources of fluctuations...

  2. Ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

  3. Silicon Drift Detectors for ALICE

    CERN Document Server

    Navach, F; CERN. Geneva

    1992-01-01

    The Silicon Drift Detector (SDD) is a semiconductor, not yet extensively used in HEP experiment, which has an excellent spatial resolution and granularity about comparable to a pixel device requiring a number of readout channels two order of magnitude less.

  4. Social Networks in Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph; Leu

    2006-01-01

      Social network is a dominant, distinguishing characteristic of Silicon Valley. Because innovation entails coping with a high degree of uncertainty,such innovation is particularly dependent on networks.……

  5. Silicon surface biofunctionalization with dopaminergic tetrahydroisoquinoline derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Lucena-Serrano, A.; Lucena-Serrano, C.; Contreras-Cáceres, R.; Díaz, A.; Valpuesta, M. [Dep. Química Orgánica, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain); Cai, C. [Dep. Chemistry, University of Houston, Houston, TX 77204-5003 (United States); López-Romero, J.M., E-mail: jmromero@uma.es [Dep. Química Orgánica, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain)

    2016-01-01

    Graphical abstract: - Highlights: • Two dopaminergic tetrahydroisoquinolines (THI) were synthesized. • Vinyl-terminated THI incorporated onto the H−Si(1 1 1) substrates via a hydrosilylation. • The highest yield in coverage was obtained in DMSO, at 4 h of irradiation and 0.1 mbar of vacuum. • Alkynyl-terminated Si surface was produced for incorporation of azide-THI by click reaction. • Best yields on grafted molecule were obtained by click reaction in absence of ascorbic acid. - Abstract: In this work we grafted vinyl- and azido-terminated tetrahydroisoquinolines (compounds 1 and 2, respectively) onto H−Si(1 1 1) silicon wafers obtaining highly stable modified surfaces. A double bond was incorporated into the tetrahydroisoquinoline structure of 1 to be immobilized by a light induced hydrosilylation reaction on hydrogen-terminated Si(1 1 1). The best results were obtained employing a polar solvent (DMSO), rather than a non-polar solvent (toluene). The azide derivative 2 was grafted onto alkenyl-terminated silicon substrates with copper-catalyzed azide-alkyne cycloaddition (CuAAC). Atomic force microscopy (AFM), contact angle goniometry (CA) and X-ray photoemission spectroscopy (XPS) were used to demonstrate the incorporation of 1 and 2 into the surfaces, study the morphology of the modified surfaces and to calculate the yield of grafting and surface coverage. CA measurements showed the increase in the surface hydrophobicity when 1 or 2 were incorporated into the surface. Moreover, compounds 1 and 2 were prepared starting from 1-(p-nitrophenyl)tetrahydroisoquinoline 3 under smooth conditions and in good yields. The structures of 1 and 2 were designed with a reduced A-ring, two substituents at positions C-6 and C-7, an N-methyl group and a phenyl moiety at C-1 in order to provide a high affinity against dopaminergic receptors. Moreover, O-demethylation of 1 was carried out once it was adsorbed onto the surface by treatment with BBr{sub 3}. The method

  6. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration.......An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  7. Silicone-Rubber Stitching Seal

    Science.gov (United States)

    Wang, D. S.

    1985-01-01

    Fabric products protected from raveling by coating threads and filling stitching holes with silicone rubber. Uncored silicone rubber applied to stitching lines with air-pressurized sealant gun. Next, plastic release film placed on coated side, and blanket flipped over so release film lies underneath. Blanket then bagged and adhesive cured under partial vacuum of about 3.5 psi or under pressure. Applications include balloons, parachutes, ultralight aircraft, sails, rescue harnesses, tents, or other fabric products highly stressed in use.

  8. Silicon superconducting quantum interference device

    Energy Technology Data Exchange (ETDEWEB)

    Duvauchelle, J. E.; Francheteau, A.; Marcenat, C.; Lefloch, F., E-mail: francois.lefloch@cea.fr [Université Grenoble Alpes, CEA - INAC - SPSMS, F-38000 Grenoble (France); Chiodi, F.; Débarre, D. [Université Paris-sud, CNRS - IEF, F-91405 Orsay - France (France); Hasselbach, K. [Université Grenoble Alpes, CNRS - Inst. Néel, F-38000 Grenoble (France); Kirtley, J. R. [Center for probing at nanoscale, Stanford University, Palo Alto, California 94305-4045 (United States)

    2015-08-17

    We have studied a Superconducting Quantum Interference Device (SQUID) made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the gas immersion laser doping technique. The SQUID is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.

  9. Silicon Sensors for HEP Experiments

    CERN Document Server

    Dierlamm, Alexander Hermann

    2017-01-01

    With increasing luminosity of accelerators for experiments in High Energy Physics the demands on the detectors increase as well. Especially tracking and vertexing detectors made of silicon sensors close to the interaction point need to be equipped with more radiation hard devices. This article introduces the different types of silicon sensors, describes measures to increase radiation hardness and provides an overview of present upgrade choices of HEP experiments.

  10. Hypercoordinate β-carbon in Grubbs and Schrock olefin metathesis metallacycles.

    Science.gov (United States)

    Remya, Premaja R; Suresh, Cherumuttathu H

    2015-10-28

    Metallacyclobutane (MCB) intermediates of Grubbs and Schrock olefin metathesis catalysts are well-known for their unusually short single bond-like metal to Cβ distance and unusually long CαCβ distances. From the analysis of structural, bond order, electron density and (13)C NMR data of a large variety of MCB systems, we show that the Cβ of the metallacycle possesses pentacoordinate geometry due to the agostic type interaction of the metal with the CαCβ bonds. The pentacoordination of Cβ to the metal center is characterized by a catastrophe ring critical point (RCP) in the quantum theory of atoms-in-molecule (QTAIM) analysis. Fine tuning of the ligand environment changes the catastrophe point to a fifth bond critical point (BCP) which is clearly brought out in the case of two ruthenium olefin metathesis systems. Several Ru and W agostic MCB complexes exhibiting pentacoordinate Cβ as well as their non-agostic isomers have been reported at the BP86/def2-TZVPP level of DFT. The agostic systems showed a significant bond order between metal and Cβ (0.17-0.36), single bond-like electron density values at the catastrophe RCP/BCP and a significantly large difference in (13)C NMR chemical shift values between Cα and Cβ atoms.

  11. Bonding analysis of planar hypercoordinate atoms via the generalized BLW-LOL.

    Science.gov (United States)

    Bomble, Laetitia; Steinmann, Stephan N; Perez-Peralta, Nancy; Merino, Gabriel; Corminboeuf, Clemence

    2013-10-05

    The multicenter bonding pattern of the intriguing hexa-, hepta-, and octacoordinate boron wheel series (e.g., CB62-, CB7-, B82-, and SiB8 as well as the experimentally detected CB7- isomer) is revised using the block-localized wave function analyzed by the localized orbital locator (BLW-LOL). The more general implementation of BLW combined with the LOL scalar field is not restricted to the analysis of the out-of-plane π-system but can also provide an intuitive picture of the σ-radial delocalization and of the role of the central atom. The results confirm the presence of a π-ring current pattern similar to that of benzene. In addition, the LOLπ isosurfaces along with the maximum intensity in the ΔLOL profiles located above and below the ring suggest that the central atom plays a minor role in the π-delocalized bonding pattern. Finally, the analysis of the σ-framework in these boron wheels is in line with a moderated inner cyclic rather than disk-type delocalization.

  12. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    Science.gov (United States)

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5.

  13. AN EVA/UNMODIFIED NANO-MAGNESIUM HYDROXIDE/SILICONE RUBBER NANOCOMPOSITE WITH SYNERGISTIC FLAME RETARDANCY

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A novel EVA/unmodified nano-magnesium hydroxide (NMH)/silicone rubber ternary nanocomposite was prepared by using a special compound flame retardant of NMH and silicone rubbet (CFR).The flammability of the ternary composite was studied by cone calorimeter test (CCT).Synergistic effect on flame retardancy was found between silicone rubber and NMH.EVA/CFR ternary nanocomposite showed the lowest peak heat release rate (PHRR) and mass loss rate (MLR) among the samples of virgin EVA,EVA composites.The synergistic flame retardancy of silicone rubber and NMH in EVA system is attributed to the enhanced char layers in the condensed phase that prevents the heat and mass transfer in the fire.

  14. Deposited low temperature silicon GHz modulator

    CERN Document Server

    Lee, Yoon Ho Daniel; Lipson, Michal

    2013-01-01

    The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This discrepancy is a result of silicon photonics's requirement for a single-crystalline silicon (c-Si) layer and a thick undercladding for optical guiding that bulk silicon wafers to not provide. While the undercladding problem can be partially addressed by substrate removal techniques, the complexity of co-integrating photonics with state-of-the-art transistors and real estate competition between electronics and photonics remain problematic. We show here a platform for deposited GHz silicon photonics based on polycrystalline silicon with high optical quality suitable for high performance electro-optic devices. We demonstrate 3 Gbps polysilicon electro-optic modulator fabricated on a deposited polysilicon layer fully compatible with CMOS backend integration. These results open up an arr...

  15. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  16. Silicon active photonic devices

    Science.gov (United States)

    Dimitropoulos, Dimitrios

    Active photonic devices utilizing the optical nonlinearities of silicon have emerged in the last 5 years and the effort for commercial photonic devices in the material that has been the workhorse of electronics has been building up since. This dissertation presents the theory for some of these devices. We are concerned herein with CW lasers, amplifiers and wavelength converters that are based on the Raman effect. There have already been cursory experimental demonstrations of these devices and some of their limitations are already apparent. Most of the limitations observed are because of the appearance of effects that are competing with stimulated Raman scattering. Under the high optical powers that are necessary for the Raman effect (tens to hundrends of mW's) the process of optical two-photon (TPA) absorption occurs. The absorption of optical power that it causes itself is weak but in the process electrons and holes are generated which can further absorb light through the free-carrier absorption effect (FCA). The effective "lifetime" that these carriers have determines the magnitude of the FCA loss. We present a model for the carrier lifetime in Silicon-On-Insulator (SOI) waveguides and numerical simulations to understand how this critical parameter varies and how it can be controlled. A p-i-n junction built along SOI waveguides can help achieve lifetime of the order of 20--100 ps but the price one has to pay is on-chip electrical power consumption on the order of 100's of mWs. We model CW Raman lasers and we find that the carrier lifetime reduces the output power. If the carrier lifetime exceeds a certain "critical" value optical losses become overwhelming and lasing is impossible. As we show, in amplifiers, the nonlinear loss does not only result in diminished gain, but also in a higher noise figure. Finally the effect of Coherent anti-Stokes Raman scattering (CARS) is examined. The effect is important because with a pump frequency at 1434nm coherent power

  17. Preparation of porous n-type silicon sample plates for desorption/ionization on silicon mass spectrometry (DIOS-MS).

    Science.gov (United States)

    Tuomikoski, S; Huikko, K; Grigoras, K; Ostman, P; Kostiainen, R; Baumann, M; Abian, J; Kotiaho, T; Franssila, S

    2002-11-01

    This study focuses on porous silicon (pSi) fabrication methods and properties for desorption ionization on silicon mass spectrometry (DIOS-MS). PSi was prepared using electrochemical etching of n-type silicon in HF-ethanol solution. Porous areas were defined by a double-sided illumination arrangement: front-side porous areas were masked by a stencil mask, eliminating the need for standard photolithography, and backside illumination was used for the backside ohmic contact. Backside illumination improved the uniformity of the porosified areas. Porosification conditions, surface derivatizations and storage conditions were explored to optimize pSi area, pore size and pore depth. Chemical derivatization of the pSi surfaces improved the DIOS-MS performance providing better ionization efficiency and signal stability with lower laser energy. Droplet spreading and drying patterns on pSi were also examined. Pore sizes of 50-200 nm were found to be optimal for droplet evaporation and pore filling with the sample liquid, as measured by DIOS efficiency. With DIOS, significantly better detection sensitivity was obtained (e.g. 150 fmol for midazolam) than with desorption ionization from a standard MALDI steel plate without matrix addition (30 pmol for midazolam). Also the noise that disturbs the detection of low-molecular weight compounds at m/z < 500 with MALDI could be clearly reduced with DIOS. Low background MS spectra and good detection sensitivity at the 100-150 fmol level for pharmaceutical compounds were achieved with DIOS-MS.

  18. Silicon Tetrafluoride on Io

    CERN Document Server

    Schaefer, L; Schaefer, Laura

    2005-01-01

    Silicon tetrafluoride (SiF4) is observed in terrestrial volcanic gases and is predicted to be the major F - bearing species in low temperature volcanic gases on Io (Schaefer and Fegley, 2005b). SiF4 gas is also a potential indicator of silica-rich crust on Io. We used F/S ratios in terrestrial and extraterrestrial basalts, and gas/lava enrichment factors for F and S measured at terrestrial volcanoes to calculate equilibrium SiF4/SO2 ratios in volcanic gases on Io. We conclude that SiF4 can be produced at levels comparable to the observed NaCl/SO2 gas ratio. We also considered potential loss processes for SiF4 in volcanic plumes and in Io's atmosphere including ion-molecule reactions, electron chemistry, photochemistry, reactions with the major atmospheric constituents, and condensation. Photochemical destruction (tchem ~ 266 days) and/or condensation as Na2SiF6 (s) appear to be the major sinks for SiF4. We recommend searching for SiF4 with infrared spectroscopy using its 9.7 micron band as done on Earth.

  19. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  20. Nanoporous silicon oxide memory.

    Science.gov (United States)

    Wang, Gunuk; Yang, Yang; Lee, Jae-Hwang; Abramova, Vera; Fei, Huilong; Ruan, Gedeng; Thomas, Edwin L; Tour, James M

    2014-08-13

    Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiOx) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiOx memory exhibited an extremely low electroforming voltage (∼ 1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10(7) A), a long high-temperature lifetime (≥ 10(4) s at 100 °C), excellent cycling endurance (≥ 10(5)), sub-50 ns switching speeds, and low power consumption (∼ 6 × 10(-5) W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiOx RRAM provide a route toward easily accessed nonvolatile memory applications.

  1. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron;

    2007-01-01

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...

  2. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  3. Palladium interaction with silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, M., E-mail: Marialuisa.Gentile@manchester.ac.uk [Centre for Nuclear Energy Technology (C-NET), School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M13 9PL (United Kingdom); Xiao, P. [Materials Science Centre, School of Materials, The University of Manchester, Manchester M13 9PL (United Kingdom); Abram, T. [Centre for Nuclear Energy Technology (C-NET), School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-07-15

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC–5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd{sub 3}Si and SiO{sub 2} phases, while the second peak and the third peak are correlated with the formation of Pd{sub 2}Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO{sub 2} phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiC{sub x}O{sub y} phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  4. Palladium interaction with silicon carbide

    Science.gov (United States)

    Gentile, M.; Xiao, P.; Abram, T.

    2015-07-01

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC-5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2 phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2 phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOy phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  5. Molecular printboards on silicon oxide: lithographic patterning of cyclodextrin monolayers with multivalent, fluorescent guest molecules

    NARCIS (Netherlands)

    Mulder, A.; Onclin, S.; Péter, M.; Hoogenboom, Jacob; Hoogenboom, J.P.; Beijleveld, Hans; Beijleveld, H.; ter Maat, Jurjen; Garcia Parajo, M.F.; Ravoo, B.J.; Huskens, Jurriaan; van Hulst, N.F.; Reinhoudt, David

    2005-01-01

    Three compounds bearing multiple adamantyl guest moieties and a fluorescent dye have been synthesized for the supramolecular patterning of -cyclodextrin (CD) host monolayers on silicon oxide using microcontact printing and dip-pen nanolithography. Patterns created on monolayers on glass were viewed

  6. Diffusion of surface-active amphiphiles in silicone-based fouling-release coatings

    DEFF Research Database (Denmark)

    Noguer, Albert Camós; Olsen, S. M.; Hvilsted, Søren

    2017-01-01

    Amphiphiles (i.e. amphiphilic molecules such as surfactants, block copolymers and similar compounds) are used in small amounts to modify the surface properties of polymeric materials. In silicone fouling-release coatings, PEG-based amphiphiles are added to provide biofouling-resistance. The success...

  7. Solution immersed silicon (SIS)-based biosensors: a new approach in biosensing.

    Science.gov (United States)

    Diware, M S; Cho, H M; Chegal, W; Cho, Y J; Jo, J H; O, S W; Paek, S H; Yoon, Y H; Kim, D

    2015-02-07

    A novel, solution immersed silicon (SIS)-based sensor has been developed which employs the non-reflecting condition (NRC) for a p-polarized wave. The SIS sensor's response is almost independent of change in the refractive index (RI) of a buffer solution (BS) which makes it capable of measuring low-concentration and/or low-molecular-weight compounds.

  8. Indentation fatigue in silicon nitride, alumina and silicon carbide ceramics

    Indian Academy of Sciences (India)

    A K Mukhopadhyay

    2001-04-01

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker’s microhardness tester at various loads in the range 1–20 N. Subsequently, the gradual evolution of the damage was characterized using an optical microscope in conjunction with the image analysing technique. The materials were classified in the order of the decreasing resistance against repeated indentation fatigue at the highest applied load of 20 N. It was further shown that there was a strong influence of grain size on the development of resistance against repeated indentation fatigue on the same spot. Finally, the poor performance of the sintered silicon carbide was found out to be linked to its previous thermal history.

  9. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  10. Adhesion of Silicone Elastomer Seals for NASA's Crew Exploration Vehicle

    Science.gov (United States)

    deGroh, Henry C., III; Miller, Sharon K. R.; Smith, Ian M.; Daniels, Christopher C.; Steinetz, Bruce M

    2008-01-01

    Silicone rubber seals are being considered for a number of interfaces on NASA's Crew Exploration Vehicle (CEV). Some of these joints include the docking system, hatches, and heat shield-to-back shell interface. A large diameter molded silicone seal is being developed for the Low Impact Docking System (LIDS) that forms an effective seal between the CEV and International Space Station (ISS) and other future Constellation Program spacecraft. Seals between the heat shield and back shell prevent high temperature reentry gases from leaking into the interface. Silicone rubber seals being considered for these locations have inherent adhesive tendencies that would result in excessive forces required to separate the joints if left unchecked. This paper summarizes adhesion assessments for both as-received and adhesion-mitigated seals for the docking system and the heat shield interface location. Three silicone elastomers were examined: Parker Hannifin S0899-50 and S0383-70 compounds, and Esterline ELA-SA-401 compound. For the docking system application various levels of exposure to atomic oxygen (AO) were evaluated. Moderate AO treatments did not lower the adhesive properties of S0899-50 sufficiently. However, AO pretreatments of approximately 10(exp 20) atoms/sq cm did lower the adhesion of S0383-70 and ELA-SA-401 to acceptable levels. For the heat shield-to-back shell interface application, a fabric covering was also considered. Molding Nomex fabric into the heat shield pressure seal appreciably reduced seal adhesion for the heat shield-to-back shell interface application.

  11. Volatile Organic Compounds (VOCs)

    Science.gov (United States)

    ... Contact Us Share Volatile Organic Compounds' Impact on Indoor Air Quality On this page: Introduction Sources Health Effects Levels in Homes Steps to Reduce Exposure Standards or Guidelines Additional Resources Introduction Volatile organic compounds ( ...

  12. Reissert compound of bisbenzimidazole

    OpenAIRE

    1989-01-01

    A Reissert compound of bisbenzimidazole can be formed by first reacting benzimidazole with an aliphatic diacid chloride to form bisbenzimidazole and then reacting the bisbenzimidazole with an aliphatic acid chloride and cyanide to form the Reissert compound thereof.

  13. Silicon-micromachined microchannel plates

    Energy Technology Data Exchange (ETDEWEB)

    Beetz, Charles P. E-mail: NanoSystem@aol.com; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R. E-mail: winn@fair1.fairfield.edu

    2000-03-11

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of {approx}0.5 to {approx}25 {mu}m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented.

  14. Silicon-micromachined microchannel plates

    Science.gov (United States)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-03-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ˜0.5 to ˜25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200°C, also compatible with high-temperture brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented.

  15. Silicon nitride equation of state

    Science.gov (United States)

    Brown, Robert C.; Swaminathan, Pazhayannur K.

    2017-01-01

    This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

  16. Growth Promotion, Increase of Iron, Potassium and Cell Wall Components following Silicon Application in Rice under Iron Deficiency

    Directory of Open Access Journals (Sweden)

    z Kiani Chalmardi

    2014-07-01

    Full Text Available Iron deficiency is one of the most important stress reducing crop growth and yields. Silicon is also an essential element in most grasses including rice that may reduces biotic and abiotic stresses. In present study, the interactions of silicon and iron nutrition were studied in rice (Oryza sativa L. cv. Tarem. The plants cultivated in greenhouse under iron treatments of 0, 2 and 10 mg l-1 as a Fe-EDTA (first factor and silicon treatments of 0 and 1.5 mM sodium silicate (second factor. The experimental design was completely randomized blocks as a factorial experiment. The plants were harvested after 5 weeks. Iron deficiency resulted in reduction of dry mater and height of plants. In addition, cellulose content in shoots and lignin and soluble proteins in roots and shoots decreased, however, potassium content in roots increased due to iron deficiency. On the contrary, silicon application caused significant increase in dry mater and height of plants. Besides, iron and potassium contents increased in iron deficient plants following silicon application. Also, cellulose, lignin, and soluble proteins in roots and shoots and phenolic compounds in shoots enhanced in silicon fed plants. The results indicated that silicon nutrition could ameliorate harmful effects of iron deficiency by increase of iron and potassium contents and increment of cell wall components and phenolic compounds

  17. Silicon Heat Pipe Array

    Science.gov (United States)

    Yee, Karl Y.; Ganapathi, Gani B.; Sunada, Eric T.; Bae, Youngsam; Miller, Jennifer R.; Beinsford, Daniel F.

    2013-01-01

    Improved methods of heat dissipation are required for modern, high-power density electronic systems. As increased functionality is progressively compacted into decreasing volumes, this need will be exacerbated. High-performance chip power is predicted to increase monotonically and rapidly with time. Systems utilizing these chips are currently reliant upon decades of old cooling technology. Heat pipes offer a solution to this problem. Heat pipes are passive, self-contained, two-phase heat dissipation devices. Heat conducted into the device through a wick structure converts the working fluid into a vapor, which then releases the heat via condensation after being transported away from the heat source. Heat pipes have high thermal conductivities, are inexpensive, and have been utilized in previous space missions. However, the cylindrical geometry of commercial heat pipes is a poor fit to the planar geometries of microelectronic assemblies, the copper that commercial heat pipes are typically constructed of is a poor CTE (coefficient of thermal expansion) match to the semiconductor die utilized in these assemblies, and the functionality and reliability of heat pipes in general is strongly dependent on the orientation of the assembly with respect to the gravity vector. What is needed is a planar, semiconductor-based heat pipe array that can be used for cooling of generic MCM (multichip module) assemblies that can also function in all orientations. Such a structure would not only have applications in the cooling of space electronics, but would have commercial applications as well (e.g. cooling of microprocessors and high-power laser diodes). This technology is an improvement over existing heat pipe designs due to the finer porosity of the wick, which enhances capillary pumping pressure, resulting in greater effective thermal conductivity and performance in any orientation with respect to the gravity vector. In addition, it is constructed of silicon, and thus is better

  18. Solid structures with bioorganic films on silicon

    Science.gov (United States)

    Tutov, E. A.

    2012-06-01

    The electrophysical parameters of ovalbumin/silicon and propolis/silicon heterostructures are studied using impedance spectroscopy and high-frequency capacitance-voltage characteristics under water vapor sorption conditions.

  19. In situ transmission infrared spectroscopy of high-kappa oxide atomic layer deposition onto silicon surfaces

    Science.gov (United States)

    Ho, Ming-Tsung

    Ultra-thin aluminum oxide (Al2O3) and hafnium oxide (HfO2) layers have been grown by atomic layer deposition (ALD) using tri-methyl-aluminum (TMA) and tetrakis-ethyl-methyl-amino-hafnium (TEMAH) respectively with heavy water (D2O) as the oxidizing agent. Several different silicon surfaces were used as substrates such as hydrogen terminated silicon (H/Si), SC2 (or RCA 2) cleaned native silicon oxide (SiO 2/Si), and silicon (oxy)nitride. In-situ transmission Fourier transform infrared spectroscopy (FTIR) has been adopted for the study of the growth mechanisms during ALD of these films. The vibrational spectra of gas phase TEMAH and its reaction byproducts with oxidants have also been investigated. Density functional theory (DFT) normal mode calculations show a good agreement with the experimental data when it is combined with linear wave-number scaling method and Fermi resonance mechanism. Ether (-C-O-C-) and tertiary alkylamine (N(R1R 2R3)) compounds are the two most dominant products of TEMAH reacting with oxygen gas and water. When ozone is used as the oxidant, gas phase CH2O, CH3NO2, CH3-N=C=O and other compounds containing -(C=O)- and --C-O-C- (or --O-C-) segments are observed. With substrate temperatures less than 400°C and 300°C for TMA and TEMAH respectively, Al oxide and Hf oxide ALD can be appropriately performed on silicon surfaces. Thin silicon (oxy)nitride thermally grown in ammonia on silicon substrate can significantly reduce silicon oxide interlayer formation during ALD and post-deposition annealing. The crystallization temperature of amorphous ALD grown HfO2 on nitridized silicon is 600°C, which is 100°C higher than on the other silicon surfaces. When HfO2 is grown on H/Si(111) at 100°C deposition temperature, minimum 5--10 ALD cycles are required for the full surface coverage. The steric effect can be seen by the evolution of the H-Si stretching mode at 2083 cm-1. The observed red shift of H-Si stretching to ˜ 2060 cm-1 can be caused by Si

  20. A silicon tracker for Christmas

    CERN Multimedia

    2008-01-01

    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  1. Tunneling magnetoresistance of silicon chains

    Science.gov (United States)

    Matsuura, Yukihito

    2016-05-01

    The tunneling magnetoresistance (TMR) of a silicon chain sandwiched between nickel electrodes was examined by using first-principles density functional theory. The relative orientation of the magnetization in a parallel-alignment (PA) configuration of two nickel electrodes enhanced the current with a bias less than 0.4 V compared with that in an antiparallel-alignment configuration. Consequently, the silicon chain-nickel electrodes yielded good TMR characteristics. In addition, there was polarized spin current in the PA configuration. The spin polarization of sulfur atoms functioning as a linking bridge between the chain and nickel electrode played an important role in the magnetic effects of the electric current. Moreover, the hybridization of the sulfur 3p orbital and σ-conjugated silicon 3p orbital contributed to increasing the total current.

  2. Belle II Silicon Vertex Detector

    CERN Document Server

    Mohanty, Gagan B

    2015-01-01

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by a vertex detector, which comprises two layers of pixelated silicon detector and four layers of silicon vertex detector. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector that is aimed to be commissioned towards the middle of 2017.

  3. Birefringence Measurements on Crystalline Silicon

    CERN Document Server

    Krüger, Christoph; Khalaidovski, Alexander; Steinlechner, Jessica; Nawrodt, Ronny; Schnabel, Roman; Lück, Harald

    2015-01-01

    Crystalline silicon has been proposed as a new test mass material in third generation gravitational wave detectors such as the Einstein Telescope (ET). Birefringence can reduce the interferometric contrast and can produce dynamical disturbances in interferometers. In this work we use the method of polarisation-dependent resonance frequency analysis of Fabry-Perot-cavities containing silicon as a birefringent medium. Our measurements show a birefringence of silicon along the (111) axis of the order of $\\Delta\\, n \\approx 10^{-7}$ at a laser wavelength of 1550nm and room temperature. A model is presented that explains the results of different settings of our measurements as a superposition of elastic strains caused by external stresses in the sample and plastic strains possibly generated during the production process. An application of our theory on the proposed ET test mass geometry suggests no critical effect on birefringence due to elastic strains.

  4. Belle II silicon vertex detector

    Science.gov (United States)

    Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, Ti.; Baroncelli, To.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Enami, K.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C. W.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Maki, M.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Suzuki, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.

    2016-09-01

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

  5. Belle II silicon vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

    2016-09-21

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

  6. SILICON REFINING BY VACUUM TREATMENT

    Directory of Open Access Journals (Sweden)

    André Alexandrino Lotto

    2014-12-01

    Full Text Available This work aims to investigate the phosphorus removal by vacuum from metallurgical grade silicon (MGSi (98.5% to 99% Si. Melting experiments were carried out in a vacuum induction furnace, varying parameters such as temperature, time and relation area exposed to the vacuum / volume of molten silicon. The results of chemical analysis were obtained by inductively coupled plasma (ICP, and evaluated based on thermodynamic and kinetic aspects of the reaction of vaporization of the phosphorus in the silicon. The phosphorus was decreased from 33 to approximately 1.5 ppm after three hours of vacuum treatment, concluding that the evaporation step is the controlling step of the process for parameters of temperature, pressure and agitation used and refining by this process is technically feasible.

  7. Improved photoluminescence of silicon nanocrystals in silicon nitride prepared by ammonia sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, K; Feng, J Y; Zhang, Z J [Department of Materials Science and Engineering, Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China)

    2006-09-28

    In the present work we investigated the photoluminescence property of silicon nanocrystals in silicon nitride prepared by ammonia sputtering. Silicon nanocrystals were demonstrated to form even after thermal annealing at 700 deg. C. Compared with the control sample using N{sub 2} as the reactive gas, the luminescence intensity of silicon nanocrystals in silicon nitride prepared by NH{sub 3} sputtering was greatly increased. The improvement in photoluminescence was attributed to the introduction of hydrogen-related bonds, which could well passivate the nonradiative defects existing at the interface between silicon nanocrystals and the silicon nitride matrix.

  8. 360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals

    Institute of Scientific and Technical Information of China (English)

    YANG Lin-lin; GUO Heng-qun; ZENG You-hua; WANG Qi-ming

    2006-01-01

    Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescence(PL) from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanocrystals was discussed.

  9. Performance of Honeywell silicon pressure transducers

    Digital Repository Service at National Institute of Oceanography (India)

    VijayKumar, K.; Joseph, A.; Desai, R.G.P.; Nagvekar, S.; Prabhudesai, S.; Damodaran, V.

    strain gauge, semiconductor strain gauge, and quartz crystal beam. In this paper we examine the laboratory performance of a few temperature-compensated Honeywell silicon strain gauge pressure transducers based on their static calibration. 2. Silicon... Thin-Diaphragm Strain Gauge Pressure Transducer Although semiconductor materials such as germanium and silicon exhibit substantial temperature-dependence, they possess pressure-sensitivities several times that of metallic strain gauges. Silicon...

  10. Automatic Replenishment Of Dopant In Silicon Growth

    Science.gov (United States)

    Kochka, E. L.

    1988-01-01

    Dopant incorporated feed pellets to maintain required concentration. Technique of continuous replenishment of dopant in silicon melt helps ensure correct resistivity in solid silicon grown from melt. Technique used in dendritic-web growth process in which ribbon of silicon continously pulled from molten material. Providing uniform doping and resistivity in ribbon technique enables production of high-quality silicon ribbon at high yields for use in semiconductor devices.

  11. Silicon nanocrystal inks, films, and methods

    Energy Technology Data Exchange (ETDEWEB)

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  12. Hybrid silicon evanescent approach to optical interconnects

    OpenAIRE

    Liang, Di; Fang, Alexander W.; Chen, Hui-Wen; Sysak, Matthew N; Koch, Brian R.; Lively, Erica; Raday, Omri; Kuo, Ying-hao; Jones, Richard; Bowers, John E

    2009-01-01

    We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III–V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication...

  13. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.;

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  14. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  15. Epitaxial Growth of High-Quality Silicon Films on Double-Layer Porous Silicon

    Institute of Scientific and Technical Information of China (English)

    黄宜平; 竺士炀; 李爱珍; 王瑾; 黄靖云; 叶志镇

    2001-01-01

    The epitaxial growth of a high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction,cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.

  16. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  17. Large volume cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

    2009-12-15

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  18. Radiation damage in silicon detectors

    CERN Document Server

    Lindström, G

    2003-01-01

    Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

  19. Biocatalytic synthesis of silicone polyesters.

    Science.gov (United States)

    Frampton, Mark B; Subczynska, Izabela; Zelisko, Paul M

    2010-07-12

    The immobilized lipase B from Candida antarctica (CALB) was used to synthesize silicone polyesters. CALB routinely generated between 74-95% polytransesterification depending on the monomers that were used. Low molecular weight diols resulted in the highest rates of esterification. Rate constants were determined for the CALB catalyzed polytransesterifications at various reaction temperatures. The temperature dependence of the CALB-mediated polytransesterifications was examined. A lipase from C. rugosa was only successful in performing esterifications using carboxy-modified silicones that possessed alkyl chains greater than three methylene units between the carbonyl and the dimethylsiloxy groups. The proteases alpha-chymotrypsin and papain were not suitable enzymes for catalyzing any polytransesterification reactions.

  20. The SUPERB silicon vertex tracker

    Energy Technology Data Exchange (ETDEWEB)

    Forti, F., E-mail: Francesco.Forti@pi.infn.it [INFN-Pisa and Universita di Pisa (Italy); Avanzini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Calderini, G.; Ceccanti, M.; Cenci, R.; Cervelli, A.; Crescioli, F.; Dell' Orso, M.; Giannetti, P.; Giorgi, M.A. [INFN-Pisa and Universita di Pisa (Italy); Lusiani, A. [Scuola Normale Superiore and INFN-Pisa (Italy); Gregucci, S.; Mammini, P.; Marchiori, G.; Massa, M.; Morsani, F.; Neri, N. [INFN-Pisa and Universita di Pisa (Italy)

    2011-04-21

    The SUPERB asymmetric e{sup +}e{sup -} collider, to be built near the INFN National Frascati Laboratory in Italy, has been designed to deliver a luminosity greater than 10{sup 36} cm{sup -2} s{sup -1} with moderate beam currents, allowing precision measurements in the flavour sector sensitive to New Physics. The conceptual design of the Silicon Vertex Tracker for the SUPERB Detector is presented, based on double-sided silicon strip detectors for the outer layers, with the addition of an innermost Layer 0 close to the interaction point, with low material budget and capable of sustaining a background rate of several MHz/cm{sup 2}.

  1. Luminescence decay of porous silicon

    Science.gov (United States)

    Chen, X.; Uttamchandani, D.; Sander, D.; O'Donnell, K. P.

    1993-04-01

    The luminescence decay pattern of porous silicon samples prepared by electrochemical etching is characterised experimentally by a non-exponential profile, a strong dependence on temperature and an absence of spectral diffusion. We describe this luminescence as carrier-dopping-assisted recombination. Following the correlation function approach to non-dispersive transport developed by Scher and co-workers [Physics Today 41 (1991) 26], we suggest a simple derivation of analytical functions which accurately describes the anomalous luminescence decay of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119 (1863) 352] (stretched-exponential) relaxations as special cases.

  2. Silicon Geiger mode avalanche photodiodes

    Institute of Scientific and Technical Information of China (English)

    M. Mazzillo; S. Billotta; G. Bonanno; A. Campisi; L. Cosentino; P. Finocchiaro; F. Musumeci; S.Privitera; S. Tudisco; G. Condorelli; D. Sanfilippo; G. Fallica; E. Sciacca; S. Aurite; S. Lombardo; E. Rlmini; M. Belluso

    2007-01-01

    In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes (GMAP) fabricated by silicon standard planar technology. Low dark count rates, negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields, as telecommunications and nuclear medical imaging.

  3. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  4. Extrinsic doping in silicon revisited

    Energy Technology Data Exchange (ETDEWEB)

    Schwingenschloegl, Udo [PSE Division, KAUST, Thuwal, Kingdom of Saudi Arabia (Saudi Arabia); Chroneos, Alexander; Grimes, Robin [Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Schuster, Cosima [Institut fuer Physik, Universitaet Augsburg, 86135 Augsburg (Germany)

    2011-07-01

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regard dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  5. Microdefects in cast multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, E.; Klinger, D.; Bergmann, S. [Inst. of Crystal Growth Berlin (Germany)

    1995-08-01

    The microdefect etching behavior of cast multicrystalline BAYSIX and SILSO samples is mainly the same as that of EFG silicon, in spite of the very different growth parameters applied to these two techniques and the different carbon contents of the investigated materials. Intentional decorating of mc silicon with copper, iron and gold did not influence the results of etching and with help of infrared transmission microscopy no metal precipitates at the assumed microdefects could be established. There are many open questions concerning the origin of the assumed, not yet doubtless proved microdefects.

  6. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  7. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Voorthuyzen, J.A.; Bergveld, P.

    1991-01-01

    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile s

  8. Preventing Freezeup in Silicon Ribbon Growth

    Science.gov (United States)

    Mackintosh, B.

    1983-01-01

    Carefully-shaped heat conductor helps control thermal gradients crucial to growth of single-crystal silicon sheets for solar cells. Ends of die through which silicon sheet is drawn as ribbon from molten silicon. Profiled heat extractor prevents ribbon ends from solidifying prematurely and breaking.

  9. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  10. 77 FR 20649 - Silicon Metal From China

    Science.gov (United States)

    2012-04-05

    ... COMMISSION Silicon Metal From China Determination On the basis of the record \\1\\ developed in the subject... order on silicon metal from China would be likely to lead to continuation or recurrence of material... Publication 4312 (March 2012), entitled Silicon Metal from China: Investigation No. 731-TA-472 (Third Review...

  11. Aquaporins Mediate Silicon Transport in Humans.

    Science.gov (United States)

    Garneau, Alexandre P; Carpentier, Gabriel A; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J; Bélanger, Richard; Côté, François; Isenring, Paul

    2015-01-01

    In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

  12. Analysis of silicon transporters in turfgrass species

    Science.gov (United States)

    Silicon is an abundant element on earth and is also known to be beneficial as an amendment in some crops such as rice. Despite its abundance in many soils, accumulation of silicon in plants is species-specific and can be widely different. It has been shown that the genes responsible for silicon upta...

  13. 21 CFR 172.480 - Silicon dioxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.480 Silicon dioxide. The food additive silicon dioxide may be safely used in food...

  14. 21 CFR 573.940 - Silicon dioxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Silicon dioxide. 573.940 Section 573.940 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed...

  15. Aquaporins Mediate Silicon Transport in Humans.

    Directory of Open Access Journals (Sweden)

    Alexandre P Garneau

    Full Text Available In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1, a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1 the kinetics of substrate transport, 2 their presence in tissues where silicon is presumed to play key roles and 3 their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

  16. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  17. Silicon optical modulators

    Directory of Open Access Journals (Sweden)

    Graham T. Reed

    2005-01-01

    Full Text Available Ever since the earliest research on optical circuits, dating back to the 1970s, there have been visions of an optical superchip (see for example1,2, containing a variety of integrated optical components to carry out light generation, modulation, manipulation, detection, and amplification (Fig. 1. The early work was associated with ferroelectric materials such as lithium niobate (LiNbO3, and III-V semiconductors such as gallium arsenide (GaAs and indium phosphide (InP based systems. LiNbO3 was interesting almost solely because of the fact that it possesses a large electro-optic coefficient3, enabling optical modulation via the Pockels effect. Alternatively, the III-V compounds were interesting because of the relative ease of laser fabrication and the prospect of optical and electronic integration.

  18. Form of silicon and method of making the same

    Energy Technology Data Exchange (ETDEWEB)

    Strobel, Timothy A.; Kim, Duck Young; Kurakevych, Oleksandr O.

    2017-07-04

    The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. N.sub.a4Si.sub.24 may be used as a precursor to make Si.sub.24.

  19. The evaporation study of silicon-containing ionic liquid

    Science.gov (United States)

    Chilingarov, Norbert S.; Medvedev, Artem A.; Deyko, Grigoriy S.; Kustov, Leonid M.; Chernikova, Elena A.; Glukhov, Lev M.; Polyakova, Marina V.; Ioutsi, Vitaliy A.; Markov, Vitaliy Yu.; Sidorov, Lev N.

    2016-07-01

    1,2-Dimethyl-3-(1‧,1‧,3‧,3‧-tetramethyl-3‧-phenyldisiloxanyl)methylimidazolium bis(trifluoromethanesulfonyl)amide ([PhC5OSi2MMIm+][Tf2N-]) is the first silicon-containing ionic liquid which was characterized with the vaporization enthalpy, (138.5 ± 1.8) kJ mol-1, and saturated vapor pressure, ln(p/Pa) = -(16656 ± 219)/(T/K) + (30.69 ± 0.92). This compound is a unique ionic liquid giving ions, retaining both cationic and anionic portions, in the electron impact ionization (EI) mass spectrum.

  20. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  1. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  2. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa

    2014-08-28

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  3. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  4. Silicon carbide fibers and articles including same

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  5. Methods for producing silicon carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  6. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  7. The Future of Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ By the end of 1984, Silicon Valley was going through the down cycle fol lowing the PC boom. A hundred PC companies wanted just 10 percent of the market, wanting to strike it rich, as rich as the Apple IPO (Initial Public Of fering) -the Google celebrity IPO of its day.

  8. Applications of passivated silicon detectors

    Science.gov (United States)

    Kyung, Richard; Park, Chan Ho

    2012-03-01

    We can postulate that dark matter are WIMPS, more specifically, Majorana particles called neutralinos floating through space. Upon neutralino-neutralino annihilation, they create a greater burst of other particles into space: these being all kinds of particles including anti-deuterons which are the indications of the existence of dark matter. For the study of the applications of passivated silicon detectors, this paper shows following procedures in two categories. Painting on little pieces of silicon (Polyimid and Boxcar Red) :Took clean paint brush and painted on Polyimid and Boxcar red samples onto little pieces of sample silicon and dried for a certain number of hours in different conditions. Cooling test : usually done in 7 cycles, cool until usually -35 degrees or -40 degrees Celsius with thermoelectric cooler, dry out, evapate the moisture in the fume hood, take pictures with the microscope and check for irregularities every 1, 4 and 7 times. The results show us how the passivated silicon will act in the real experiment--the vacuum chamber and x-rays (from the radioactive source), and different atmospheric pressures simulate what it will be like in space.

  9. Surface property modification of silicon

    Science.gov (United States)

    Danyluk, S.

    1984-01-01

    The main emphasis of this work has been to determine the wear rate of silicon in fluid environments and the parameters that influence wear. Three tests were carried out on single crystal Czochralski silicon wafers: circular and linear multiple-scratch tests in fluids by a pyramidal diamond simulated fixed-particle abrasion; microhardness and three-point bend tests were used to determine the hardness and fracture toughness of abraded silicon and the extent of damage induced by abrasion. The wear rate of (100) and (111) n and p-type single crystal Cz silicon abraded by a pyramidal diamond in ethanol, methanol, acetone and de-ionized water was determined by measuring the cross-sectional areas of grooves of the circular and linear multiple-scratch tests. The wear rate depends on the loads on the diamond and is highest for ethanol and lowest for de-ionized water. The surface morphology of the grooves showed lateral and median cracks as well as a plastically deformed region. The hardness and fracture toughness are critical parameters that influence the wear rate. Microhardness tests were conducted to determine the hardness as influenced by fluids. Median cracks and the damage zone surrounding the indentations were also related to the fluid properties.

  10. Integrated silicon optofluidic ring resonator

    NARCIS (Netherlands)

    Testa, G.; Huang, Y.; Sarro, P.M.; Zeni, L.; Bernini, R.

    2010-01-01

    The feasibility of an integrated silicon optofluidic ring resonator is demonstrated. Liquid core antiresonant reflecting optical waveguides are used to realize a rectangular ring resonator with a multimode interference liquid core coupler between the ring and the bus waveguide. In this configuration

  11. Molecular dynamics of silicon indentation

    Energy Technology Data Exchange (ETDEWEB)

    Kallman, J.S.; Hoover, W.G.; Hoover, C.G.; De Groot, A.J.; Lee, S.M.; Wooten, F. (Department of Applied Science Davis-Livermore, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States))

    1993-04-01

    We use nonequilibrium molecular dynamics to simulate the elastic-plastic deformation of silicon under tetrahedral nanometer-sized indentors. The results are described in terms of a rate-dependent and temperature-dependent phenomenological yield strength. We follow the structural change during indentation with a computer technique that allows us to model the dynamic simulation of diffraction patterns.

  12. Simulation of Silicon Photomultiplier Signals

    NARCIS (Netherlands)

    Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Loehner, Herbert; Schaart, Dennis R.

    2009-01-01

    In a silicon photomultiplier (SiPM), also referred to as multi-pixel photon counter (MPPC), many Geiger-mode avalanche photodiodes (GM-APDs) are connected in parallel so as to combine the photon counting capabilities of each of these so-called microcells into a proportional light sensor. The

  13. Simulation of silicon photomultiplier signals

    NARCIS (Netherlands)

    Seifert, S.; Van Dam, H.T.; Huizenga, J.; Vinke, R.; Dendooven, P.; Löhner, H.; Schaart, D.R.

    2009-01-01

    In a silicon photomultiplier (SiPM), also referred to as multi-pixel photon counter (MPPC), many Geiger-mode avalanche photodiodes (GM-APDs) are connected in parallel so as to combine the photon counting capabilities of each of these so-called microcells into a proportional light sensor. The

  14. Let’s talk silicon

    Science.gov (United States)

    While silicon (Si) has been a known plant nutrient for centuries, how plants use this element is still poorly understood. Researchers have identified how plants acquire Si from the environment and transport the element to all plant tissues, including roots, stems, petioles, leaves and flowers. We ...

  15. Mesoporous Silicon-Based Anodes

    Science.gov (United States)

    Peramunage, Dharmasena

    2015-01-01

    For high-capacity, high-performance lithium-ion batteries. A new high-capacity anode composite based on mesoporous silicon is being developed. With a structure that resembles a pseudo one-dimensional phase, the active anode material will accommodate significant volume changes expected upon alloying and dealloying with lithium (Li).

  16. Behavior of dislocations in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sumino, Koji [Nippon Steel Corp., Chiba Prefecture (Japan)

    1995-08-01

    A review is given of dynamic behavior of dislocations in silicon on the basis of works of the author`s group. Topics taken up are generation, motion and multiplication of dislocations as affected by oxygen impurities and immobilization of dislocations due to impurity reaction.

  17. Enhanced fluorescence, morphological and thermal properties of CdSe/ZnS quantum dots incorporated in silicone resin.

    Science.gov (United States)

    Trung, Nguyen Ngoc; Luu, Quynh-Phuong; Son, Bui Thanh; Sinh, Le Hoang; Bae, Jin-Young

    2013-01-01

    Our research focused on the morphological and optical properties of core/shell cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dots incorporated in silicone resin. After dispersing ligand-coated quantum dots into Dow Corning two-component silicone resins (OE6630A and OE6630B at 1:4 mixing ratio by weight), the resins were cured at 150 degrees C for 1.5 hours to produce the quantum dot-silicone resin nanocomposites. The optical, morphological and thermal properties of the quantum dot incorporated in silicone resin were investigated by ultraviolet-visible, fluorescence, atomic force microscopy, field emission scanning electron microscopy, differential scanning calorimetry and thermogravimetric analysis. When the quantum dots, originally coated with trioctylamine ligand, were transferred from a chloroform solvent to methyl phenyl silicone oil and silicone resins of high viscosity, the quantum dots showed increased turbidity and lowered fluorescence intensity. Fluorescence enhancement was investigated by using various functional ligands such as poly(1, 1-dimethyl silazane) (multi-silazane), hexamethylenediamine (diamine), cysteamine (amino-thiol), triethylsilane (reactive hydrosilane), hexamethyldisilazane, nonamethyltrisilazane, octamethylcyclotetrasilazane (reactive amines). The results showed that the reactive amines were good additive ligands for enhancing the fluorescence of CdSe/ZnS quantum dots dispersed in the silicone resins, providing 1.2-2.48 Im/W and 4.2-5.56% higher luminous efficiency and photoluminescence conversion efficiency, respectively. We speculate that these reactive amines donate electrons to the surface electron traps, thereby reducing charge recombination. In addition, quantum dots aggregate to form quantum dot clusters with a relatively homogeneously dispersed in the silicone resin matrices, showing good emission properties due to surface passivation and good colloidal stability with the addition of silazane compounds to the resin

  18. OCULAR COMPLICATIONS OF SILICONE OIL

    Directory of Open Access Journals (Sweden)

    Muhammad Kamran Khalid

    2016-06-01

    Full Text Available Objective: Silicone oil (SO is an invaluable tool in the management of complex retinal detachments (RDs. Injection of silicone oil is associated with a variety of ocular complications specially when it is kept for a long time and its removal is endangering retinal re-detachment. The objective of this study was to determine the frequencies of different ocular complications associated with silicone oil injection in our setup. Study Design: Case series. Place and Duration of Study: This study was conducted at Vitreo-retina division of Al-Shifa Trust Eye Hospital, Rawalpindi from January 2014 to June 2014. Material and Methods: A total of 30 patients were included in the study who underwent pars-planavitrectomy (PPV with silicone oil injection for complex retinal detachments. The patients who had reached between 3 months & 6 months of their postoperative period and were presenting with some complications related to silicone oil injection were included in the study. Their records were reviewed and pre-operative data were collected regarding state of the eye preoperatively. Then the post-operative complications were noted. The descriptive and analytical statistics of different variables were measured using SPSS-17.0 software. Results: Out of thirty patients included in our study 23 (76.7% were male and 7 (23.3% were female. The mean age was 21.53 ± 16.004 years and range was 66 years. The mean pre-operative intra-ocular pressure ( IOP was 14.0 ± 2.150 mmHg and range 8 mmHg and the mean post-operative IOP was 24.93 ± 13.889 mmHg and range 45 mmHg (p=0.001. The pre-operative PVR grade-C was absent in 12 (40% patients and was present in 18 (60% patients and post-operative PVR grade-C was absent in 24 (80% patients and was present in 6 (20% patients (p=0.004; McNemar test. Band keratopathy was seen in 8 (26.7% and corneal decompensation in 2 (6.7% patients. Emulsification of silicone oil was seen in 14 (46.7% patients. Rubeosisiridis was present in 2

  19. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  20. Ecotoxicology of organofluorous compounds.

    Science.gov (United States)

    Murphy, Margaret B; Loi, Eva I H; Kwok, Karen Y; Lam, Paul K S

    2012-01-01

    Organofluorous compounds have been developed for myriad purposes in a variety of fields, including manufacturing, industry, agriculture, and medicine. The widespread use and application of these compounds has led to increasing concern about their potential ecological toxicity, particularly because of the stability of the C-F bond, which can result in chemical persistence in the environment. This chapter reviews the chemical properties and ecotoxicology of four groups of organofluorous compounds: fluorinated refrigerants and propellants, per- and polyfluorinated compounds (PFCs), fluorinated pesticides, and fluoroquinolone antibiotics. These groups vary in their environmental fate and partitioning, but each raises concern in terms of ecological risk on both the regional and global scale, particularly those compounds with long environmental half-lives. Further research on the occurrence and toxicities of many of these compounds is needed for a more comprehensive understanding of their ecological effects.

  1. Cryostable lightweight frit bonded silicon mirror

    Science.gov (United States)

    Anthony, F.; McCarter, D.; Tangedahl, M.; Content, D.

    The excellent polishability, low density and relatively high stiffness of silicon make it an attractive candidate for optical applications that require superior performance. Assembly of silicon details by means of glass frit bonding permits significant light weighting thus enhancing the benefit of silicon mirrors. To demonstrate the performance potential, a small lightweight glass frit bonded silicon mirror was fabricated and tested for cryoability. The test mirror was 12.5cm in diameter with a 60cm spherical radius and a maximum thickness, at the perimeter, of 2.5cm. A machined silicon core was used to stiffen the two face sheets of the silicon sandwich. These three elements were assembled, by glass frit bonding, to form the substrate that was polished. The experimental evaluation in a liquid nitrogen cryostat, demonstrated cryostability performance significantly better than required by the mirror specification. Key WordsCryostable, Lightweight, Silicon, Frit Bond, Spherical, Mirror

  2. Aluminum gettering in single and multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    McHugo, S.A.; Hieslmair, H.; Weber, E.R. [Univ. of California, Berkeley, CA (United States)

    1995-08-01

    Al gettering has been performed on integrated circuit (I.C.) quality silicon and a variety of single and multicrystalline silicon solar cell materials. The minority carrier diffusion length, Ln, has been used to quantify the gettering response. Vast differences in response to the Al gettering treatment are observed between the I.C. quality silicon and the solar cell materials. The I.C. silicon generally responds well while the solar cell silicon performance progressively degrades with increasing gettering temperature. Preliminary data shows that by performing a Rapid Thermal Annealing treatment prior to the Al gettering, an improved or further degraded Ln emerges in solar cell material depending on the material`s manufacturer. We explain these observed phenomena by suggesting that Al gettering in solar cell silicon is an impurity emission-limited process while for I.C. quality silicon it is diffusion limited.

  3. Inert gas atomization of chemical grade silicon

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, D.; Ferreira Neto, J.B.; Salgado, L.; Nogueira, P.F.; Poco, J.G.R. [Metallurgy Div. Cidade Univ., Inst. for Technological Research, Sao Paulo, SP (Brazil)

    2001-07-01

    The use of inert gas atomization to obtain chemical grade silicon particles was investigated. Both cooling rate and chemical composition are very important regarding a tailored microstructure, related with silicon performance during the synthesis of the silanos, an intermediary raw material in the silicone production. Previously refined silicon was used as raw material. Silicon with different aluminum contents were atomized and analyzed. The atomization temperature was set around 1520 C, and it was used a confined atomization nozzle. It was necessary to use a long atomization chamber to allow the cooling of the coarse silicon particles. After atomization, the powder was characterized and classified. The coarse fraction was milled. Two different particle size groups (different cooling rates) and the as atomized particles were investigated. The chemical behavior during the synthesis of the silanos was analyzed in a laboratory reactor. The relationship between cooling rate, aluminum content and silicon performance during the silanos synthesis is discussed. (orig.)

  4. Systemic Sclerosis and Silicone Breast Implant: A Case Report and Review of the Literature

    Directory of Open Access Journals (Sweden)

    Antonios Psarras

    2014-01-01

    Full Text Available Environmentally induced systemic sclerosis is a well-recognized condition, which is correlated with exposure to various chemical compounds or drugs. However, development of scleroderma-like disease after exposure to silicone has always been a controversial issue and, over time, it has triggered spirited debate whether there is a certain association or not. Herein, we report the case of a 35-year-old female who developed Raynaud’s phenomenon and, finally, systemic sclerosis shortly after silicone breast implantation surgery.

  5. Method of Stabilizing the Surface Energy of Fabrics Coated with Silicone

    Institute of Scientific and Technical Information of China (English)

    Di Jianfeng(狄剑峰); Perwueiz Anne; Gueguen Virginie; Lam Thanh My

    2001-01-01

    Silicone coatings have been used in this study. The method adopted was the liquid drop analysis on the coated fabrics. The contact angle between a liquid drop and the fabric surface was measured with two liquids continuously and recorded by a computer. The surface energy was calculated by means of Owens method.Kinetic measurement was adopted. The contact angle of liquids on the fabric coated silicone decreased with time was found. A compound solution DX has been found, so that the contact angle of the liquids on the fabric washed with DX becomes constant, and the surface energy of the fabric can be reduced to below 15 mJ/m2.

  6. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  7. Silicon-Based Anode and Method for Manufacturing the Same

    Science.gov (United States)

    Yushin, Gleb Nikolayevich (Inventor); Luzinov, Igor (Inventor); Zdyrko, Bogdan (Inventor); Magasinski, Alexandre (Inventor)

    2017-01-01

    A silicon-based anode comprising silicon, a carbon coating that coats the surface of the silicon, a polyvinyl acid that binds to at least a portion of the silicon, and vinylene carbonate that seals the interface between the silicon and the polyvinyl acid. Because of its properties, polyvinyl acid binders offer improved anode stability, tunable properties, and many other attractive attributes for silicon-based anodes, which enable the anode to withstand silicon cycles of expansion and contraction during charging and discharging.

  8. Parallel microwave chemistry in silicon carbide microtiter platforms: a review.

    Science.gov (United States)

    Kappe, C Oliver; Damm, Markus

    2012-02-01

    In this review, applications of silicon carbide-based microtiter platforms designed for use in combination with dedicated multimode microwave reactors are described. These platforms are employed not only for the efficient parallel synthesis of compound libraries, but also in the context of high-throughput reaction screening/optimization and a number of other (bio)analytical and biomedical applications. Since the semiconducting plate material (silicon carbide) is strongly microwave absorbing and possesses high thermal conductivity, no temperature gradients across the microtiter plate exist. Therefore, many of the disadvantages experienced in attempting to perform microtiter plate chemistry under conventional microwave conditions can be eliminated. In general, the silicon carbide-based microtiter platforms allow sealed vessel processing (either directly in the well or in glass vials placed into the wells) of volumes ranging from 0.02-3.0 mL at a maximum temperature/pressure limit of 200°C/20 bar. Depending on the specific plate and rotor configuration, a maximum of 80-192 transformations can be carried out in parallel in a single microwave irradiation experiment under strict temperature control. A platform type utilizing HPLC/GC vials as reaction vessels allows analysis directly from the reaction vessel eliminating the need for a transfer step from the reaction to the analysis vial. The latter system is particularly useful for analytical applications as well as reaction optimization/screening.

  9. Silicon heterojunction solar cell and crystallization of amorphous silicon

    Science.gov (United States)

    Lu, Meijun

    The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (˜100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells. Although the a-Si:H is found to help to achieve high efficiency in c-Si heterojuntion solar cells, it also absorbs short wavelength (cells. Considering this, heterojunction with both a-Si:H emitter and base contact on the back side in an interdigitated pattern, i.e. interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, is developed. This dissertation will show our progress in developing IBC-SHJ solar cells, including the structure design; device fabrication and characterization; two dimensional simulation by using simulator Sentaurus Device; some special features of IBC-SHJ solar cells; and performance of IBC-SHJ cells without and with back surface buffer layers. Another trend for solar cell industry is thin film solar cells, since they use less materials resulting in lower cost. Polycrystalline silicon (poly-Si) is one promising thin-film material. It has the potential advantages to not only retain the performance and stability of c

  10. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  11. Chemical effect on diffusion in intermetallic compounds

    Science.gov (United States)

    Chen, Yi-Ting

    With the trend of big data and the Internet of things, we live in a world full of personal electronic devices and small electronic devices. In order to make the devices more powerful, advanced electronic packaging such as wafer level packaging or 3D IC packaging play an important role. Furthermore, ?-bumps, which connect silicon dies together with dimension less than 10 ?m, are crucial parts in advanced packaging. Owing to the dimension of ?-bumps, they transform into intermetallic compound from tin based solder after the liquid state bonding process. Moreover, many new reliability issues will occur in electronic packaging when the bonding materials change; in this case, we no longer have tin based solder joint, instead, we have intermetallic compound ?-bumps. Most of the potential reliability issues in intermetallic compounds are caused by the chemical reactions driven by atomic diffusion in the material; thus, to know the diffusivities of atoms inside a material is significant and can help us to further analyze the reliability issues. However, we are lacking these kinds of data in intermetallic compound because there are some problems if used traditional Darken's analysis. Therefore, we considered Wagner diffusivity in our system to solve the problems and applied the concept of chemical effect on diffusion by taking the advantage that large amount of energy will release when compounds formed. Moreover, by inventing the holes markers made by Focus ion beam (FIB), we can conduct the diffusion experiment and obtain the tracer diffusivities of atoms inside the intermetallic compound. We applied the technique on Ni3Sn4 and Cu3Sn, which are two of the most common materials in electronic packaging, and the tracer diffusivities are measured under several different temperatures; moreover, microstructure of the intermetallic compounds are investigated to ensure the diffusion environment. Additionally, the detail diffusion mechanism was also discussed in aspect of diffusion

  12. Anisotropic etching of monocrystalline silicon under subcritical conditions

    Science.gov (United States)

    Gonzalez-Pereyra, Nestor Gabriel

    Sub- and supercritical fluids remain an underexploited resource for materials processing. Around its critical point a common compound such as water behaves like a different substance exhibiting changes in its properties that modify its behavior as a solvent and unlock reaction paths not viable in other conditions. In the subcritical region water's properties can be directed by controlling temperature and pressure. Water and silicon are two of the most abundant, versatile, environmentally non-harmful, and simplest substances on Earth. They are among the most researched and best-known substances. Both are ubiquitous and essential for present-day world. Silicon is fundamental in semiconductor fabrication, microelectromechanical systems, and photovoltaic cells. Wet etching of silicon is a fabrication strategy shared by these three applications. Processing of silicon requires large amounts of water, often involving dangerous and environmentally hazardous chemicals. Yet, minimal knowledge is available on the ways high temperature water interacts with crystalline silicon. The purpose of this project is to identify and implement a method for the modification of monocrystalline silicon surfaces with three important characteristics: 1) requires minimal amounts of added chemicals, 2) controllability of morphological features formed, 3) reduced processing time. This will be accomplished by subjecting crystalline silicon to diluted alkaline solutions working in the subcritical region of water. This approach allows for variations on surface morphologies and etching rates by adapting the reactions conditions, with focus on composition and temperature of the solutions used. The work reported discusses the techniques used for producing surfaces with a variety of morphologies that ultimately allowed to create patterns and textures on silicon wafers, using highly diluted alkaline solutions that can be used for photovoltaic applications. These morphologies were created with a

  13. A review of oxide, silicon nitride, and silicon carbide brazing

    Energy Technology Data Exchange (ETDEWEB)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed.

  14. Debug automation from pre-silicon to post-silicon

    CERN Document Server

    Dehbashi, Mehdi

    2015-01-01

    This book describes automated debugging approaches for the bugs and the faults which appear in different abstraction levels of a hardware system. The authors employ a transaction-based debug approach to systems at the transaction-level, asserting the correct relation of transactions. The automated debug approach for design bugs finds the potential fault candidates at RTL and gate-level of a circuit. Debug techniques for logic bugs and synchronization bugs are demonstrated, enabling readers to localize the most difficult bugs. Debug automation for electrical faults (delay faults)finds the potentially failing speedpaths in a circuit at gate-level. The various debug approaches described achieve high diagnosis accuracy and reduce the debugging time, shortening the IC development cycle and increasing the productivity of designers. Describes a unified framework for debug automation used at both pre-silicon and post-silicon stages; Provides approaches for debug automation of a hardware system at different levels of ...

  15. D0 Silicon Upgrad: D0 Silicon Cooling System

    Energy Technology Data Exchange (ETDEWEB)

    Squires, B.; /Fermilab

    1998-07-14

    The cooling system design is not complete. This paper lays out the general design and some of the design calculations that have been performed up to this date. Further refinement will be performed. This is especially true in the piping layout, piping insulation and detector manifold areas. The silicon detector is cooled by means of a coolant in the beryllium channels that also act as the primary supporting device for the silicon ladders and wedges. The coolant is water with ethylene glycol added as a freezing point depressant. The glycol concentration in the coolant is 30% by weight resulting in a freezing point of approximately -15 C. If the water/glycol is not sufficient for maintaining the desired detector temperature the concentration of the water/glycol may be changed or an alternative coolant may be used.

  16. NATURAL POLYACETYLENE COMPOUNDS

    Directory of Open Access Journals (Sweden)

    D. A. Konovalov

    2014-01-01

    Full Text Available Polyacetylenes (polyynes are compounds which contain two or more triple bonds in its structure. About 2 000 different polyacetylenes and biogenetically related substances were identified in 24 families of higher plants. However, most of these compounds were found in seven families of flowering plants: Apiaceae (Umbelliferae, Araliaceae, Asteraceae (Compositae, Campanulaceae, Olacaceae, Pittosporaceae and Santalaceae. Polyacetylenes are relatively unstable, chemically and biologically active compounds, and present in fungi, microorganisms, marine invertebrates and other organisms except for plants. Acetylenes form distinct specialized group of chemically active natural compounds, which are biosynthesized in plants of unsaturated fatty acids. In addition to widespread aliphatic polyacetylenes thiophenes dithiacyclohexadienes (thiarubrines, thioethers, sulphoxides, sulphones, alkamides, chlorohydrins, lactones, spiroacetal enol ethers, furans, pyrans, tetrahydropyrans, isocoumarins, aromatic acetylenes were also found in plant species. Polyacetylenes are localized in different plant organs, and can be found both individually and as a compound with carbohydrates, terpene, phenolic and other compounds. Many polyacetylenes are found in the composition of the essential oils of plants and it confirms their strongly marked ecological functions. From biological point of view these compounds are often synthesized by plants as toxic or bitter antifeedants, allelopathic compounds, phytoalexins or broadly antibiotic components. Polyynes are strong photosensitizers. They exhibit anti-inflammatory, anti-coagulant, anti-bacterial, antituberculosis, anti-fungal, anti-viral, neuroprotective and neurotoxic activity. Immunostimulatory influence associated with certain allergenicity of some of these substances was established. Therefore, without a doubt polyacetylenes are of interest for the modern pharmacy and medicine.

  17. Determination of phenolic compounds

    Energy Technology Data Exchange (ETDEWEB)

    Chao, G.K.J.; Suatoni, J.C.

    1982-01-01

    Details are given of a procedure for separation and identification of phenolic compounds in aqueous solution by high-performance liquid chromatography. It can also be applied to non-aqueous samples after preliminary isolation of a polar fraction containing the phenolic compounds.

  18. Stable configurations of graphene on silicon

    Science.gov (United States)

    Javvaji, Brahmanandam; Shenoy, Bhamy Maithry; Mahapatra, D. Roy; Ravikumar, Abhilash; Hegde, G. M.; Rizwan, M. R.

    2017-08-01

    Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon-silicon dimer formation is changed due to silicon-carbon bonding. These results may help further in band structure engineering of silicon-graphene lattice.

  19. Planar photonic crystal waveguides in silicon oxynitride

    DEFF Research Database (Denmark)

    Liu, Haoling; Frandsen, Lars Hagedorn; Borel, Peter Ingo;

    Most work on planar photonic crystals has been performed on structures based on semiconducting crystals such as Si and III-V compounds. Due to the high index contrast between the host material and the air holes (e.g., Si has n = 3.5), these structures exhibit a large photonic band gap. However......ON glasses with different indices between 1.46 and 1.77 and we are currently fabricating photonic crystals in SiON on a silica buffer layer on Si. Simulations show that a complete band gap can indeed be created for TE-polarised light in the SiON structures, making them promising candidates for new photonic......, at visible wavelengths they absorb light very strongly. In contrary, silicon oxynitride (SiON) glasses offer high transparency down to blue and ultraviolet wavelengths. Thus, SiON photonic crystal waveguides can open for new possibilities, e.g., within sensing and life sciences. We have fabricated Si...

  20. Silicon photomultipliers in AMIGA muon counters

    Energy Technology Data Exchange (ETDEWEB)

    Botti, Ana Martina [Institut fuer Kernphysik, Karlsruher Institut fuer Technologie (Germany); Instituto de Tecnologias en Deteccion y Astroparticulas (ITeDA) (Argentina); Collaboration: Pierre-Auger-Collaboration

    2016-07-01

    The project AMIGA (Auger Muons and Infill for the Ground Array) aims to extend the energy range at the Pierre Auger Observatory to observe cosmic rays of lower energies (down to ∝10{sup 17} eV) and to study the transition from extragalactic to galactic cosmic rays. AMIGA is compounded by an infill of surface detectors (employing Cherenkov radiation detection in water) and muon counters. The AMIGA muon counters consist of an array of buried modules composed of 64 scintillator bars, a multi-pixel Photo Multiplier Tube (PMT) and the corresponding electronic of acquisition which works along with the surface detector. Currently, ITeDA is evaluating the feasibility of replacing PMTs with silicon photomultipliers (SiPM) without performing any substantial modification in the digital readout nor in the mechanical design. I present calibration results of a prototype module associated to the surface detector Toune of the Pierre Auger Observatory using a SiPM Hamamatsu S1257-100C plugged to the standard AMIGA front-end electronics. In addition, a study concerning gain stability and temperature variation has also been performed and is reported. I finally discuss a comparison between traces measured by both photodetectors (PMT and SiPM) for modules associated to the surface detector Toune.

  1. Synthesis of Silicon Nanocrystals in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

  2. Silicon Nanocrystal Synthesis in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

  3. Modification of chemical properties of cell walls by silicon and its role in regulation of the cell wall extensibility in oat leaves.

    Science.gov (United States)

    Hossain, Mohammad Talim; Soga, Kouichi; Wakabayashi, Kazuyuki; Kamisaka, Seiichiro; Fujii, Shuhei; Yamamoto, Ryoichi; Hoson, Takayuki

    2007-04-01

    Effects of silicon on the mechanical and chemical properties of cell walls in the second leaf of oat (Avena sativa L.) seedlings were investigated. The cell wall extensibility in the basal region of the second leaf was considerably higher than that in the middle and subapical regions. Externally applied silicon increased the cell wall extensibility in the basal region, but it did not affect the extensibility in the middle and subapical regions. The amounts of cell wall polysaccharides and phenolic compounds, such as diferulic acid (DFA) and ferulic acid (FA), per unit length were lower in the basal region than in the middle and subapical regions of the leaf, and silicon altered these amounts in the basal region. In this region, silicon decreased the amounts of matrix polymers and cellulose per unit length and of DFA and FA, both per unit length and unit matrix polymer content. Silicon treatment also lowered the activity of phenylalanine ammonia-lyase (PAL, EC 4.3.1.5) in the basal region. In contrast, the amount of silicon in cell walls increased in response to silicon treatment in three regions. These results suggest that in the basal region, silicon reduces the net wall mass and the formation of phenolic acid-mediated cross-linkages between wall polysaccharides. Such modifications of wall architecture may be responsible for the silicon-induced increase in the cell wall extensibility in oat leaves.

  4. Dry etch method for texturing silicon and device

    Energy Technology Data Exchange (ETDEWEB)

    Gershon, Talia S.; Haight, Richard A.; Kim, Jeehwan; Lee, Yun Seog

    2017-07-25

    A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

  5. Thermal and mechanical joints to cryo-cooled silicon monochromatorcrystals

    Energy Technology Data Exchange (ETDEWEB)

    MacDowell, A.; Fakra, S.; Morrison, G.

    2006-07-14

    We describe the performance of various materials used as thethermal interface between silicon to silicon and silicon to copper jointswhen operated at ~;120K and loaded with ~;20 watts of thermal power. Wefind that only the indium based silicon-to-silicon joint isreliable.

  6. Substitute potting compounds for Sylgard 93-120. Process Development Endeavor Nos. 203 and 207

    Energy Technology Data Exchange (ETDEWEB)

    Flowers, G.L.; Switzer, S.T.

    1979-07-01

    The report deals with the development of substitute potting compounds to replace the no longer available Dow Corning 93-120. Three different approaches to formulate a substitute, two of which were successful are presented. The efforts discussed are a part of a laarger project to better understand the silicone potting compound technology and to formulate substitutes for specific materials which have been discontinued by Dow Corning.

  7. Metamaterial-inspired silicon nanophotonics

    Science.gov (United States)

    Staude, Isabelle; Schilling, Jörg

    2017-04-01

    The prospect of creating metamaterials with optical properties greatly exceeding the parameter space accessible with natural materials has been inspiring intense research efforts in nanophotonics for more than a decade. Following an era of plasmonic metamaterials, low-loss dielectric nanostructures have recently moved into the focus of metamaterial-related research. This development was mainly triggered by the experimental observation of electric and magnetic multipolar Mie-type resonances in high-refractive-index dielectric nanoparticles. Silicon in particular has emerged as a popular material choice, due to not only its high refractive index and very low absorption losses in the telecom spectral range, but also its paramount technological relevance. This Review overviews recent progress on metamaterial-inspired silicon nanostructures, including Mie-resonant and off-resonant regimes.

  8. CMS silicon tracker milestone 200

    CERN Document Server

    Dierlamm, A

    2002-01-01

    The tracker of CMS will fully consist of silicon micro-strip and pixel sensors. Building a detector with 210 m/sup 2/ sensor surface in about 3 years requires a tightly controlled construction schedule. All different aspects of the production are exercised within a pre- production of 200 modules (Milestone 200) to identify and eliminate possible bottlenecks and to test the complete electronic chain. The quality, process stability and radiation hardness of the silicon sensors will be permanently monitored. Automatic assembly procedure and industrial bonding machines will guarantee a fast and reliable construction. All modules will be tested for signal, noise and pedestals at room temperature and operation temperature of -10 degrees C. Quality assurance of the Milestone 200 sensors and modules including irradiation and stability tests are presented. (6 refs).

  9. Exceptional plasticity of silicon nanobridges

    Energy Technology Data Exchange (ETDEWEB)

    Ishida, Tadashi; Sato, Takaaki; Toshiyoshi, Hiroshi; Collard, Dominique; Fujita, Hiroyuki [University of Tokyo, Institute of Industrial Science, 4-6-1 Komaba Meguro, Tokyo 153-8505 (Japan); Cleri, Fabrizio [Institut d' Electronique Microelectronique et Nanotechnologie (CNRS UMR 8520), Universite de Lille I, Avenue Poincare BP60069 59652 Villeneuve d' Ascq (France); Kakushima, Kuniyuki [Tokyo Institute of Technology, 4259, Nagatsuda, Midori, Yokohama, Kanagawa 226-8502 (Japan); Mita, Makoto [Department of Spacecraft Engineering, Japan Aerospace Exploration Agency, 3-1-1, Yoshinodai, Sagamihara, Kanagawa 229-8510 (Japan); Miyata, Masaki; Itamura, Noriaki; Sasaki, Naruo [Department of Materials and Life Sciences, Seikei University, 3-3-1, Kitamachi, Kichijoji, Musashino, Tokyo 180-8633 (Japan); Endo, Junji, E-mail: tadashii@iis.u-tokyo.ac.jp [FK Optical laboratory, 1-13-4 Nakano Niiza Saitama, 352-0005 (Japan)

    2011-09-02

    The plasticity of covalently bonded materials is a subject at the forefront of materials science, bearing on a wide range of technological and fundamental aspects. However, covalent materials fracture in a brittle manner when the deformation exceeds just a few per cent. It is predicted that a macroscopically brittle material like silicon can show nanoscale plasticity. Here we report the exceptional plasticity observed in silicon nanocontacts ('nanobridges') at room temperature using a special experimental setup combining a transmission electron microscope and a microelectromechanical system. When accounting for surface diffusion, we succeeded in elongating the nanocontact into a wire-like structure, with a fivefold increase in volume, up to more than twenty times the original length. Such a large plasticity was caused by the stress-assisted diffusion and the sliding of the intergranular, amorphous-like material among the nanocrystals.

  10. Supersonic Dislocation Bursts in Silicon

    Science.gov (United States)

    Hahn, E. N.; Zhao, S.; Bringa, E. M.; Meyers, M. A.

    2016-06-01

    Dislocations are the primary agents of permanent deformation in crystalline solids. Since the theoretical prediction of supersonic dislocations over half a century ago, there is a dearth of experimental evidence supporting their existence. Here we use non-equilibrium molecular dynamics simulations of shocked silicon to reveal transient supersonic partial dislocation motion at approximately 15 km/s, faster than any previous in-silico observation. Homogeneous dislocation nucleation occurs near the shock front and supersonic dislocation motion lasts just fractions of picoseconds before the dislocations catch the shock front and decelerate back to the elastic wave speed. Applying a modified analytical equation for dislocation evolution we successfully predict a dislocation density of 1.5 × 1012 cm-2 within the shocked volume, in agreement with the present simulations and realistic in regards to prior and on-going recovery experiments in silicon.

  11. Progress in the medicinal chemistry of silicon: C/Si exchange and beyond.

    Science.gov (United States)

    Fujii, Shinya; Hashimoto, Yuichi

    2017-04-01

    Application of silyl functionalities is one of the most promising strategies among various 'elements chemistry' approaches for the development of novel and distinctive drug candidates. Replacement of one or more carbon atoms of various biologically active compounds with silicon (so-called sila-substitution) has been intensively studied for decades, and is often effective for alteration of activity profile and improvement of metabolic profile. In addition to simple C/Si exchange, several novel approaches for utilizing silicon in medicinal chemistry have been suggested in recent years, focusing on the intrinsic differences between silicon and carbon. Sila-substitution offers great potential for enlarging the chemical space of medicinal chemistry, and provides many options for structural development of drug candidates.

  12. Gas-Phase Interactions as Sources of Contamination in Solar Silicon

    Science.gov (United States)

    Meteleva-Fischer, Y. V.; Böttger, A. J.; Sloof, W. G.; Kraaijveld, B.

    2014-06-01

    Avoiding contamination of silicon for solar cells during high-temperature processing steps is a key issue. Contamination of silicon via direct contact due to diffusion processes has been recognized. Here, it is shown that interactions with the gas phase also are a potential source of contamination. Thermodynamic calculations performed for a temperature range of 373 K to 1873 K (100 °C to 1600 °C) and total pressure of 10 kPa predict the formation of volatile species that are harmful for photovoltaic properties. Volatile species form due to graphite-moisture interaction and the interaction of this gas mixture with compounds commonly present in silicon production units: graphite, quartz, alumina, boron nitride, and iron. The results of the calculations are supported by the data of the surface contamination of exposed graphite furnace parts.

  13. A Microsystem Based on Porous Silicon-Glass Anodic Bonding for Gas and Liquid Optical Sensing

    Science.gov (United States)

    De Stefano, Luca; Malecki, Krzysztof; Della Corte, Francesco G.; Moretti, Luigi; Rea, Ilaria; Rotiroti, Lucia; Rendina, Ivo

    2006-01-01

    We have recently presented an integrated silicon-glass opto-chemical sensor for lab-on-chip applications, based on porous silicon and anodic bonding technologies. In this work, we have optically characterized the sensor response on exposure to vapors of several organic compounds by means of reflectivity measurements. The interaction between the porous silicon, which acts as transducer layer, and the organic vapors fluxed into the glass sealed microchamber, is preserved by the fabrication process, resulting in optical path increase, due to the capillary condensation of the vapors into the pores. Using the Bruggemann theory, we have calculated the filled pores volume for each substance. The sensor dynamic has been described by time-resolved measurements: due to the analysis chamber miniaturization, the response time is only of 2 s. All these results have been compared with data acquired on the same PSi structure before the anodic bonding process.

  14. A Microsystem Based on Porous Silicon-Glass Anodic Bonding for Gas and Liquid Optical Sensing

    Directory of Open Access Journals (Sweden)

    Ivo Rendina

    2006-06-01

    Full Text Available We have recently presented an integrated silicon-glass opto-chemical sensor forlab-on-chip applications, based on porous silicon and anodic bonding technologies. In thiswork, we have optically characterized the sensor response on exposure to vapors of severalorganic compounds by means of reflectivity measurements. The interaction between theporous silicon, which acts as transducer layer, and the organic vapors fluxed into the glasssealed microchamber, is preserved by the fabrication process, resulting in optical pathincrease, due to the capillary condensation of the vapors into the pores. Using theBruggemann theory, we have calculated the filled pores volume for each substance. Thesensor dynamic has been described by time-resolved measurements: due to the analysischamber miniaturization, the response time is only of 2 s. All these results have beencompared with data acquired on the same PSi structure before the anodic bonding process.

  15. Purity of silicon: with great effect on its performance in graphite-silicon anode materials for lithium-ion batteries

    Science.gov (United States)

    Jin, Chenxin; Xu, Guojun; Liu, Liekai; Yue, Zhihao; Li, Xiaomin; Sun, Fugen; Tang, Hao; Huang, Haibin; Zhou, Lang

    2017-09-01

    Ferrosilicon, industrial grade silicon, solar grade silicon, and electronic grade silicon were ball-milled to form four types of silicon powders, which were mixed with graphite powders at weight ratio of 5:95, respectively, for being used as graphite-silicon anode materials in lithium-ion batteries (LIBs). The effect of the purity of silicon on its electrochemical performance in graphite-silicon anode materials for LIBs was investigated by the cycle and rate tests. Results show that silicon with higher purity shows higher capacity, better cycle, and rate performance. In addition, the significant difference in capacity of the four graphite-silicon anodes with different purities of silicon is not completely resulted from the content of silicon materials, and the influence of the impurity inside the silicon cannot be ignored as well. The sample prepared from electronic grade silicon presents the highest first discharge capacity, which is 440.5 mAh g-1.

  16. Evaluation of the Effect of Silicone Contamination on Various Bond Systems and the Feasibility of Removing the Contamination

    Science.gov (United States)

    Stanley, Stephanie D.

    2008-01-01

    Silicone is a contaminant that can cause catastrophic failure of a bond system depending on the materials and processes used to fabricate the bond system, Unfortunately, more and more materials are fabricated using silicone. The purpose of this testing was to evaluate which bond systems are sensitive to silicone contamination and whether or not a cleaning process could be utilized to remove the silicone to bring the bond system performance back to baseline. Due to the extensive nature of the testing attempts will be made to generalize the understanding within classes of substrates, bond systems, and surface preparation and cleaning methods. This study was done by contaminating various meta! (steel, inconel, and aluminum), phenolic (carbon cloth phenolic and glass cloth phenolic), and rubber (natural rubber, asbestos-silicone dioxide filled natural butyldiene rubber, silica-filled ethylene propylenediene monomer, and carbon-filled ethylene propylenediene monomer) substrates which were then bonded using various adhesives and coatings (epoxy-based adhesives, paints, ablative compounds, and Chemlok adhesives) to determine the effect silicone contamination has on a given bond system's performance. The test configurations depended on the bond system being evaluated. The study also evaluated the feasibility of removing the silicone contamination by cleaning the contaminated substrate prior to bonding. The cleaning processes also varied depending on bond system.

  17. Silicon nanocrystals as handy biomarkers

    Science.gov (United States)

    Fujioka, Kouki; Hoshino, Akiyoshi; Manabe, Noriyoshi; Futamura, Yasuhiro; Tilley, Richard; Yamamoto, Kenji

    2007-02-01

    Quantum dots (QDs) have brighter and longer fluorescence than organic dyes. Therefore, QDs can be applied to biotechnology, and have capability to be applied to medical technology. Currently, among the several types of QDs, CdSe with a ZnS shell is one of the most popular QDs to be used in biological experiments. However, when the CdSe QDs were applied to clinical technology, potential toxicological problems due to CdSe core should be considered. To eliminate the problem, silicon nanocrystals, which have the potential of biocompatibility, could be a candidate of alternate probes. Silicon nanocrystals have been synthesized using several techniques such as aerosol, electrochemical etching, laser pyrolysis, plasma deposition, and colloids. Recently, the silicon nanocrystals were reported to be synthesized in inverse micelles and also stabilized with 1-heptene or allylamine capping. Blue fluorescence of the nanocrystals was observed when excited with a UV light. The nanocrystals covered with 1-heptene are hydrophobic, whereas the ones covered with allylamine are hydrophilic. To test the stability in cytosol, the water-soluble nanocrystals covered with allylamine were examined with a Hela cell incorporation experiment. Bright blue fluorescence of the nanocrystals was detected in the cytosol when excited with a UV light, implying that the nanocrystals were able to be applied to biological imaging. In order to expand the application range, we synthesized and compared a series of silicon nanocrystals, which have variable surface modification, such as alkyl group, alcohol group, and odorant molecules. This study will provide a wider range of optoelectronic applications and bioimaging technology.

  18. Chemical Reactions of Silicon Clusters

    OpenAIRE

    Ramakrishna, Mushti V.; Pan, Jun

    1994-01-01

    Smalley and co-workers discovered that chemisorption reactivities of silicon clusters vary over three orders of magnitude as a function of cluster size. In particular, they found that \\Si{33}, \\Si{39}, and \\Si{45} clusters are least reactive towards various reagents compared to their immediate neighbors in size. We explain these observations based on our stuffed fullerene model. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction...

  19. Magic Numbers of Silicon Clusters

    OpenAIRE

    Pan, Jun; Ramakrishna, Mushti V.

    1994-01-01

    A structural model for intermediate sized silicon clusters is proposed that is able to generate unique structures without any dangling bonds. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry results in the formation of crown atoms surrounded by $\\pi$-bonded dimer pairs. This model yields unique structures for \\Si{33}, \\Si{39}, and \\Si{45} clusters without any dangling bonds and hence explains wh...

  20. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  1. The ATLAS Silicon Pixel Sensors

    CERN Document Server

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C

    2001-01-01

    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  2. VULCANIZATION KINETICS OF SILICONE RUBBER

    Institute of Scientific and Technical Information of China (English)

    YUAN Qiang; LI Yufu; LI Guangliang

    1988-01-01

    Vulcanization rate of silicone rubber with the aid of organic peroxide or hydrosilylation agent was studied by using oscillation disk rheometer. It was found that the process of network formation would take place through one, two or three steps depending on the structure of the reactants. The effect of phenyl group, vinyl terminals on polysiloxane chain and the functionality of silylation agent was also studied.

  3. Zhongguan Village, China's Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Liu Xinwen

    2008-01-01

    @@ In 1999,driven by the dream of using technology to change people's lives,Li Yanhong,returned to Zhongguancun(Zhongguan Village in Chinese),Beijing from Silicon Valley in the U.S.to create Baidu.com.Over the years,Baidu has become the most frequently hitted website in China as well as the largest Chinesc search engine and Chinese language website in the world.

  4. Clathrate compounds and method of manufacturing

    Science.gov (United States)

    Nolas, George S.; Witanachchi, Sarath; Mukherjee, Pritish

    2009-05-19

    The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si.sub.136-yGe.sub.y, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.

  5. Silicon spintronics: Progress and challenges

    Science.gov (United States)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-07-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  6. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  7. Characterisation of some experimental silicones.

    Science.gov (United States)

    Parker, S; Meththananda, I; Braden, M; Pearson, G J

    2006-12-01

    Release of antimicrobials/antibacterials like chlorhexidine diacetate (CHD) has proved successful in inhibiting Candidal colonisation of silicone-based biomaterials. However, their addition will increase water uptake and may compromise the mechanical integrity. Two experimental silicones (S1 and S2) differing only in the surface treatment of the filler, were investigated. Ultimate tensile strength (UTS), % elongation at break (Eb), Shore A hardness and, when doped with 1% CHD, water uptake and CHD release were measured. Elastic modulus (E) was calculated from the hardness measurements. There was no significant difference in UTS and Eb between the two materials. However S1 had a higher hardness (30.6 +/- 0.97) and thus E (0.76 MPa) than S2 (hardness = 23.8 +/- 0.48, E = 0.45 MPa). Water uptake for S2 (0.6%) was higher than for S2 (0.1) and addition of CHD dramatically increased the uptake of both (S1 = 3.1%, S2 = 4.0%). Release of CHD was higher for S2 (30%) than S1 (27%). Equating osmotic pressure within the droplets with elastic restraining force gave an extension ratio of 1.95 for S1 and 5.39 for S2. Thus, addition of a hydrophilic agent can compromise the mechanical integrity of low modulus silicones.

  8. The DAMPE silicon tungsten tracker

    CERN Document Server

    Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

    2017-01-01

    The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

  9. Casting larger polycrystalline silicon ingots

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Tomlinson, T.; Cliber, J.; Shea, S.; Narayanan, M.

    1995-08-01

    Solarex has developed and patented a directional solidification casting process specifically designed for photovoltaics. In this process, silicon feedstock is melted in a ceramic crucible and solidified into a large grained semicrystalline silicon ingot. In-house manufacture of low cost, high purity ceramics is a key to the low cost fabrication of Solarex polycrystalline wafers. The casting process is performed in Solarex designed casting stations. The casting operation is computer controlled. There are no moving parts (except for the loading and unloading) so the growth process proceeds with virtually no operator intervention Today Solarex casting stations are used to produce ingots from which 4 bricks, each 11.4 cm by 11.4 cm in cross section, are cut. The stations themselves are physically capable of holding larger ingots, that would yield either: 4 bricks, 15 cm by 15 an; or 9 bricks, 11.4 cm by 11.4 an in cross-section. One of the tasks in the Solarex Cast Polycrystalline Silicon PVMaT Program is to design and modify one of the castings stations to cast these larger ingots. If successful, this effort will increase the production capacity of Solarex`s casting stations by 73% and reduce the labor content for casting by an equivalent percentage.

  10. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  11. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  12. Broadband Nonlinear Signal Processing in Silicon Nanowires

    DEFF Research Database (Denmark)

    Yvind, Kresten; Pu, Minhao; Hvam, Jørn Märcher;

    The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion and propa......The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion...... and propagation loss silicon nanowires and use them to demonstrate the broadband capabilities of silicon....

  13. New Perspective of High-Pure Silicon

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    @@The discovery in the middle of 1950s of the semi-con ducting properties of crystalline silicon has led to the impetu ous development of electric power facilities, the sun-power industry, and particularly, the microelectronic industry. The increasing demand for the high-pure silicon requires the production of synthetic crystals. The raw material for the syn thetic crystals, the so-called technical, or metallurgical silicon, is obtained from quartzite and quartz of superior quality by means of carbon-thermal reduction of silicon using an electric arc discharge. The complexity of the technological process, high cost of the related facilities, worsening environmental pollution, and narrow-mindedness of a raw material company are attributed to the rise in price of the final product-silicon plates, resulting in the fall in the production of high-pure silicon, normally used in sun storage batteries.

  14. Photodetectors on the Basis of Porous Silicon

    Directory of Open Access Journals (Sweden)

    I.B. Olenych

    2012-11-01

    Full Text Available The paper studies the electrical characteristics of photodiode structures porous siliconsilicon substrates modified with molecules of iodine. Changes the nature of current-voltage characteristics obtained structures with symmetrical for straightening result of adsorption of iodine are revealed. It is studied the spectral characteristics of photoresponse in the 450-1100 nm wavelength range, its temperature dependence in the 125-325 K range and energy characteristics of photovoltaic structures based on porous silicon. A possible mechanism of influence of iodine adsorption on the electrical and photoelectrical properties of the structures of porous siliconsilicon substrates is proposed. The results extend the perspectives of porous silicon in photoelectronics.

  15. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  16. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko

    2001-01-01

    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  17. Light Emission in Silicon from Carbon Nanotubes

    CERN Document Server

    Gaufrès, Etienne; Noury, Adrien; Roux, Xavier Le; Rasigade, Gilles; Beck, Alexandre; Vivien, Laurent

    2015-01-01

    The use of optics in microelectronic circuits to overcome the limitation of metallic interconnects is more and more considered as a viable solution. Among future silicon compatible materials, carbon nanotubes are promising candidates thanks to their ability to emit, modulate and detect light in the wavelength range of silicon transparency. We report the first integration of carbon nanotubes with silicon waveguides, successfully coupling their emission and absorption properties. A complete study of this coupling between carbon nanotubes and silicon waveguides was carried out, which led to the demonstration of the temperature-independent emission from carbon nanotubes in silicon at a wavelength of 1.3 {\\mu}m. This represents the first milestone in the development of photonics based on carbon nanotubes on silicon.

  18. Thermo-Mechanical Characterization of Silicon Carbide-Silicon Carbide Composites at Elevated Temperatures Using a Unique Combustion Facility

    Science.gov (United States)

    2009-09-10

    F THERMO-MECHANICAL CHARACTERIZATION OF SILICON CARBIDE - SILICON CARBIDE COMPOSITES AT ELEVATED...MECHANICAL CTERIZATION OF SILICON CARBIDE -SILIC BIDE COMPOSITES AT LEVATED TEMPER S USING A UNIQUE COMBUSTION FACILITY DISSERTATI N Ted T. Kim...THERMO-MECHANICAL CHARACTERIZATION OF SILICON CARBIDE - SILICON CARBIDE COMPOSITES AT ELEVATED TEMPERATURES USING A UNIQUE COMBUSTION FACILITY

  19. A Revival of Waste: Atmospheric Pressure Nitrogen Plasma Jet Enhanced Jumbo Silicon/Silicon Carbide Composite in Lithium Ion Batteries.

    Science.gov (United States)

    Chen, Bing-Hong; Chuang, Shang-I; Liu, Wei-Ren; Duh, Jenq-Gong

    2015-12-30

    In this study, a jumbo silicon/silicon carbide (Si/SiC) composite (JSC), a novel anode material source, was extracted from solar power industry cutting waste and used as a material for lithium-ion batteries (LIBs), instead of manufacturing the nanolized-Si. Unlike previous methods used for preventing volume expansion and solid electrolyte interphase (SEI), the approach proposed here simply entails applying surface modification to JSC-based electrodes by using nitrogen-atmospheric pressure plasma jet (N-APPJ) treatment process. Surface organic bonds were rearranged and N-doped compounds were formed on the electrodes through applying different plasma treatment durations, and the qualitative examinations of before/after plasma treatment were identified by X-ray photoelectron spectroscopy (XPS) and electron probe microanalyzer (EPMA). The surface modification resulted in the enhancement of electrochemical performance with stable capacity retention and high Coulombic efficiency. In addition, depth profile and scanning electron microscope (SEM) images were executed to determine the existence of Li-N matrix and how the nitrogen compounds change the surface conditions of the electrodes. The N-APPJ-induced rapid surface modification is a major breakthrough for processing recycled waste that can serve as anode materials for next-generation high-performance LIBs.

  20. Long-wavelength silicon photonic integrated circuits

    OpenAIRE

    2014-01-01

    In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 mu m wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5-5 mu m wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors on this platform is described for the integration of lasers and photodetectors op...

  1. The Achievements and Challenges of Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Richard Soref

    2008-01-01

    Full Text Available A brief overview of silicon photonics is given here in order to provide a context for invited and contributed papers in this special issue. Recent progress on silicon-based photonic components, photonic integrated circuits, and optoelectronic integrated circuits is surveyed. Present and potential applications are identified along with the scientific and engineering challenges that must be met in order to actualize applications. Some on-going government-sponsored projects in silicon optoelectronics are also described.

  2. Picosecond Pulse Laser Microstructuring of silicon

    Institute of Scientific and Technical Information of China (English)

    赵明; 尹钢; 朱京涛; 赵利

    2003-01-01

    We report the experimental results of picosecond pulse laser microstructuring (pulse duration 35ps, wavelength 1.06μm, repetition rate 10Hz) of silicon using the direct focusing technique. Arrays of sharp conical spikes located below the initial surface have been formed by cumulative picosecond pulsed laser irradiation of silicon in SF6. Irradiation of silicon surface in air, N2, or vacuum creates ripple-like patterns, but does not create the sharp conical spikes.

  3. Carbon nanofibers encapsulated in macropores in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Starkov, V.; Red' kin, A. [Institute of Microelectronics Technology and High Purity Materials, RAS, Institutskaya str. 6, Chernogolovka 142432 (Russian Federation)

    2007-05-15

    This work reports on the development of fuel cells electrodes with a porous silicon structure and carbon nanofibers encapsulated in macropores in silicon. It is demonstrated that decomposition of carbon on a Ni catalyst deposited on the pore walls can be used to create a homogeneous carbon nanotube layer that dramatically increases the specific surface area while simultaneously reducing the resistivity of the macroporous silicon layer. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Mid-infrared silicon photonic devices

    Science.gov (United States)

    Mashanovich, Goran Z.; Milosevic, Milan M.; Nedeljkovic, Milos; Owens, Nathan; Headley, William R.; Teo, Ee Jin; Xiong, Boqian; Yang, Pengyuan; Hu, Youfang

    2011-01-01

    The mid-infrared spectral region is interesting for bio-chemical sensing, environmental monitoring, free space communications, or military applications. Silicon is relatively low-loss from 1.2 to 8 μm and from 24 to 100 μm, and therefore silicon photonic circuits can be used in mid- and far- infrared wavelength ranges. In this paper we investigate several silicon based waveguide structures for mid-infrared wavelength region.

  5. Diamond-silicon carbide composite and method

    Science.gov (United States)

    Zhao, Yusheng

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  6. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, Jeroen; Berenschot, Erwin; Maury, Pascale; Jansen, Henri

    2006-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7–20 nm wide, 40–100 nm high and centimeters long. All dimensions are easily a

  7. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, Jeroen; Berenschot, Erwin; Maury, Pascale; Jansen, Henri

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily a

  8. Interstitial-type defects in implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Berezhnov, N.I.; Stel' makh, V.F.; Chelyadinskij, A.R.

    1984-07-01

    Boron-, lithium-, phosphorus- and silicon-implanted silicon layers were investigated using X-ray diffraction method for measuring the crystal lattice parameters. It was established that stable interstitial complexes in concentrations comparable with concentrations of vacancy type defects occur in silicon as a result of ion implantation. The interstitial complexes are annealed at the following stages: 1 - 140, 2 - 500 deg C in the case of silicon irradiation by light ions and 1 - 180, 2 - 560 deg C in crystals irradiated by medium mass ions.

  9. Diffusivity in silicon 1953 to 2009

    CERN Document Server

    Fisher, David J

    2010-01-01

    This work is essentially an update of previous compilations of information on the diffusivity of elements in semiconductor-grade silicon. It subsumes the data contained in B.L.Sharma's monograph on 'Diffusion in Semiconductors' (Trans Tech Publications, 1970), plus the data contained in Diffusion and Defect Data (Diffusion in Silicon) Volume 45 (1986), Defect and Diffusion Forum (Diffusion in Silicon - 10 years of Research) Volumes 153-155 (1998), Defect and Diffusion Forum (Diffusion in Silicon - a Seven-Year Retrospective) Volume 241 (2005) and the latest data from recent Semiconductor Retro

  10. Simple Approach to Superamphiphobic Overhanging Silicon Nanostructures

    DEFF Research Database (Denmark)

    Kumar, Rajendra; Mogensen, Klaus Bo; Bøggild, Peter

    2010-01-01

    Superhydrophobic silicon nanostructures were fabricated by anisotropic etching of silicon coated with a thin hydrophobic layer. At certain etch parameters, overhanging nanostructures form at the apexes of the rod-shaped tips, This leads to superoleophobic behavior for several oily liquids...... with contact angles up to 152 degrees and roll-off angle down to 8 degrees. Such nonlithographic nanoscale overhanging Structures can also be added to silicon nanograss by deposition of a thin SiO2 layer, which equips the silicon rods with 100-300 nm sized overhanging Structures. This is a simple, fast...

  11. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  12. Mid-IR heterogeneous silicon photonics

    Science.gov (United States)

    Roelkens, Gunther; Dave, Utsav; Gassenq, Alban; Hattasan, Nannicha; Hu, Chen; Kuyken, Bart; Leo, Francois; Malik, Aditya; Muneeb, Muhammad; Ryckeboer, Eva; Uvin, Sarah; Hens, Zeger; Baets, Roel G.; Shimura, Yosuke; Gencarelli, Federica; Vincent, Benjamin; Loo, Roger; Van Campenhout, Joris; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Tournié, Eric; Chen, Xia; Nedeljkovic, Milos; Mashanovich, Goran Z.; Shen, Li; Healy, Noel; Peacock, Anna C.; Liu, Xiaoping; Osgood, Richard M.; Green, William

    2013-12-01

    In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources.

  13. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  14. Engineering piezoresistivity using biaxially strained silicon

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads;

    2008-01-01

    We calculate the shear piezocoefficient of p-type silicon with grown-in biaxial strain using a 66 k·p method. We find a significant increase in the value of the shear piezocoefficient for compressive grown-in biaxial strain, while tensile strain decreases the piezocoefficient. The dependence...... of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

  15. ELECTRON BOMBARDMENT OF SILICON SOLAR CELLS,

    Science.gov (United States)

    DAMAGE, ELECTRON IRRADIATION, SOLAR CELLS , SILICON, PHOTOELECTRIC CELLS(SEMICONDUCTOR), QUARTZ, GLASS, SHIELDING, CRYSTAL DEFECTS, HEAT TREATMENT, ARTIFICIAL SATELLITES, SPACECRAFT, GRAPHICS, GRAPHICS.

  16. Activation of silicon quantum dots for emission

    Institute of Scientific and Technical Information of China (English)

    Huang Wei-Qi; Miao Xin-Jian; Huang Zhong-Mei; Liu Shi-Rong; Qin Chao-Jian

    2012-01-01

    The emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on the surface of silicon quantum dots can break the passivation to form localized electronic states in the band gap to generate active centers where stronger emission occurs.From this point of view,we can build up radiative matter for emission.Emissions of various wavelengths can be obtained by controlling the surface bonds of silicon quantum dots.Our experimental results demonstrate that annealing is important in the treatment of the activation,and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.

  17. Silicon infrared diffuser for wireless communication

    Science.gov (United States)

    Massera, Ettore; Rea, Ilaria; Nasti, Ivana; Maddalena, Pasqualino; di Francia, Girolamo

    2006-09-01

    We show what we believe to be a novel way to use silicon in infrared radio communication as a suitable material for the realization of optical diffusers in the range of 850-1600 nm. A crystalline silicon wafer is made porous by means of electrochemical etching. The porous silicon produced is optically characterized, and measurements report a high reflectance in the band of interest. We also study the angular distribution of diffused radiation by the porous silicon surface at different angles of incident radiation. Measurements show that radiation diffuses in a quasi-Lambertian manner, confirming the good performance of this material as an incident radiation diffuser.

  18. Silicon solid state devices and radiation detection

    CERN Document Server

    Leroy, Claude

    2012-01-01

    This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers stateof- the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application.

  19. Radiation experience with the CDF silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Husemann, Ulrich; /Rochester U.

    2005-11-01

    The silicon detectors of the CDF experiment at the Tevatron collider are operated in a harsh radiation environment. The lifetime of the silicon detectors is limited by radiation damage, and beam-related incidents are an additional risk. This article describes the impact of beam-related incidents on detector operation and the effects of radiation damage on electronics noise and the silicon sensors. From measurements of the depletion voltage as a function of the integrated luminosity, estimates of the silicon detector lifetime are derived.

  20. Raman Amplifier Based on Amorphous Silicon Nanoparticles

    Directory of Open Access Journals (Sweden)

    M. A. Ferrara

    2012-01-01

    Full Text Available The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers.

  1. MEA 86 Compound data

    Data.gov (United States)

    U.S. Environmental Protection Agency — This data file contains the full raw parameter data for the 86 compounds tested in the developmental MEA assay, as well as Area Under the Curve (AUC) calculations...

  2. Heart testing compound

    Science.gov (United States)

    Knapp, F.F. Jr.; Goodman, M.M.

    1983-06-29

    The compound 15-(p-(/sup 125/I)-iodophenyl)-6-tellurapentadecanoic acid is disclosed as a myocardial imaging agent having rapid and pronounced uptake, prolonged myocardial retention, and low in vivo deiodination.

  3. Polynitramino compounds outperform PETN.

    Science.gov (United States)

    Joo, Young-Hyuk; Shreeve, Jean'ne M

    2010-01-07

    New polynitramino compounds were synthesized and fully characterized using IR and multinuclear ((1)H, (13)C, (15)N) NMR spectroscopy, and elemental analysis as well as single-crystal X-ray diffraction.

  4. Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. A miniature silicon diode matrix detector for in vivo measurement of 133Xe disappearance following local tissue injection

    DEFF Research Database (Denmark)

    Bangsgaard Bendtsen, Katja Maria; Svendsen, J H; Rasmussen, H B

    1992-01-01

    A variety of biological processes can be studied from the washout of compounds labelled with a gamma emitter. Conventional systems for measurement of gamma radiation can detect count rates at both the low and high energy range of the indicator in question, 133Xe. However, silicon (Si) photodiodes...

  6. Thermodynamics of Organic Compounds

    Science.gov (United States)

    1979-01-01

    General Techniques for Combustion of Liquid/Soli. Organic Compounds by Oxygen Bomb Calorimetry by Arthur J. Head, William D. Good, and Ccrnelius...Mosselman, Chap. 8; Combustion of Liquid/Solid Organic Compounds with Non-Metallic Hetero-Atoms by Arthur J. Head and William D. Good, Chap. 9; in...0 Box 95085 Washington, DC 20234 Los Angeles, CA 90045 National Bureau of Standards CINDAS Chemical Thermodynamics Division Purdue University

  7. Compound composite odontoma.

    Science.gov (United States)

    Girish, G; Bavle, Radhika M; Singh, Manish Kumar; Prasad, Sahana N

    2016-01-01

    The term odontoma has been used as a descriptor for any tumor of odontogenic origin. It is a growth in which both epithelial and mesenchymal cells exhibits complete differentiation. Odontomas are considered as hamartomas rather than true neoplasm. They are usually discovered on routine radiographic examination. Odontomas, according to the World Health Organization, are classified into complex odontoma and compound odontomas. The present paper reports a case of compound composite odontomas.

  8. Compound composite odontoma

    Directory of Open Access Journals (Sweden)

    G Girish

    2016-01-01

    Full Text Available The term odontoma has been used as a descriptor for any tumor of odontogenic origin. It is a growth in which both epithelial and mesenchymal cells exhibits complete differentiation. Odontomas are considered as hamartomas rather than true neoplasm. They are usually discovered on routine radiographic examination. Odontomas, according to the World Health Organization, are classified into complex odontoma and compound odontomas. The present paper reports a case of compound composite odontomas.

  9. Chemistry of peroxide compounds

    Science.gov (United States)

    Volnov, I. I.

    1981-01-01

    The history of Soviet research from 1866 to 1967 on peroxide compounds is reviewed. This research dealt mainly with peroxide kinetics, reactivity and characteristics, peroxide production processes, and more recently with superoxides and ozonides and emphasis on the higher oxides of group 1 and 2 elements. Solid state fluidized bed synthesis and production of high purity products based on the relative solubilities of the initial, intermediate, and final compounds and elements in liquid ammonia are discussed.

  10. Phenolic Molding Compounds

    Science.gov (United States)

    Koizumi, Koji; Charles, Ted; de Keyser, Hendrik

    Phenolic Molding Compounds continue to exhibit well balanced properties such as heat resistance, chemical resistance, dimensional stability, and creep resistance. They are widely applied in electrical, appliance, small engine, commutator, and automotive applications. As the focus of the automotive industry is weight reduction for greater fuel efficiency, phenolic molding compounds become appealing alternatives to metals. Current market volumes and trends, formulation components and its impact on properties, and a review of common manufacturing methods are presented. Molding processes as well as unique advanced techniques such as high temperature molding, live sprue, and injection/compression technique provide additional benefits in improving the performance characterisitics of phenolic molding compounds. Of special interest are descriptions of some of the latest innovations in automotive components, such as the phenolic intake manifold and valve block for dual clutch transmissions. The chapter also characterizes the most recent developments in new materials, including long glass phenolic molding compounds and carbon fiber reinforced phenolic molding compounds exhibiting a 10-20-fold increase in Charpy impact strength when compared to short fiber filled materials. The role of fatigue testing and fatigue fracture behavior presents some insight into long-term reliability and durability of glass-filled phenolic molding compounds. A section on new technology outlines the important factors to consider in modeling phenolic parts by finite element analysis and flow simulation.

  11. High precision measurement of silicon in naphthas by ICP-OES using isooctane as diluent.

    Science.gov (United States)

    Gazulla, M F; Rodrigo, M; Orduña, M; Ventura, M J; Andreu, C

    2017-03-01

    An analytical protocol for the accurate and precise determination of Si in naphthas is presented by using ICP-OES, optimizing from the sample preparation to the measurement conditions, in order to be able to analyze for the first time silicon contents below 100µgkg(-1) in a relatively short time thus being used as a control method. In the petrochemical industry, silicon can be present as a contaminant in different petroleum products such as gasoline, ethanol, or naphthas, forming different silicon compounds during the treatment of these products that are irreversibly adsorbed onto catalyst surfaces decreasing its time life. The complex nature of the organic naphtha sample together with the low detection limits needed make the analysis of silicon quite difficult. The aim of this work is to optimize the measurement of silicon in naphthas by ICP-OES introducing as an improvement the use of isooctane as diluent. The set up was carried out by optimizing the measurement conditions (power, nebulizer flow, pump rate, read time, and viewing mode) and the sample preparation (type of diluent, cleaning process, blanks, and studying various dilution ratios depending on the sample characteristics). Copyright © 2016 Elsevier B.V. All rights reserved.

  12. Activation of macrophages by silicones: phenotype and production of oxidant metabolites

    Directory of Open Access Journals (Sweden)

    Sodero Natalia

    2002-07-01

    Full Text Available Abstract Background The effect of silicones on the immune function is not fully characterized. In clinical and experimental studies, immune alterations associated with silicone gel seem to be related to macrophage activation. In this work we examined in vivo, phenotypic and functional changes on peritoneal macrophages early (24 h or 48 h and late (45 days after the intraperitoneal (i.p. injection of dimethylpolysiloxane (DMPS (silicone. We studied the expression of adhesion and co-stimulatory molecules and both the spontaneous and the stimulated production of reactive oxygen intermediates and nitric oxide (NO. Results The results presented here demonstrate that the fluid compound DMPS induced a persistent cell recruitment at the site of the injection. Besides, cell activation was still evident 45 days after the silicone injection: activated macrophages exhibited an increased expression of adhesion (CD54 and CD44 and co-stimulatory molecules (CD86 and an enhanced production of oxidant metabolites and NO. Conclusions Silicones induced a persistent recruitment of leukocytes at the site of the injection and macrophage activation was still evident 45 days after the injection.

  13. Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

    OpenAIRE

    Zhou, Shengqiang; Liu, Fang; Prucnal, S.; Gao, Kun; Khalid, M.; Baehtz, C.; Posselt, M.; Skorupa, W.; Helm, M

    2015-01-01

    Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the silicon surface leads to a liquid phase and the fast recrystallization velocity allows trapping o...

  14. Using silicon to enhance rice anther culture efficiency

    Institute of Scientific and Technical Information of China (English)

    LIUBaoshen; CHENCuixia; YINLiqing; ZHANGJianjun

    1997-01-01

    Silicon is one of essential elements for rice growth. Deficiency of silicon in plants would affect the physiological metabolism of rice.Considering the important role of silicon to rice and no silicon being used in ordinary anther culture medium, we added absorbable silicon at different concentrations into either or both in-duction media (IM), differentiation media(DM) to study the effect of silicon on anther culture efficiency.

  15. Silicon-on-ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

    Science.gov (United States)

    Whitehead, A. B.; Zook, J. D.; Grung, B. L.; Heaps, J. D.; Schmit, F.; Schuldt, S. B.; Chapman, P. W.

    1981-01-01

    The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.

  16. Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

    Science.gov (United States)

    Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

    1984-01-01

    Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

  17. Modification of silicone sealant to improve gamma radiation resistance, by addition of protective agents

    Science.gov (United States)

    González-Pérez, Giovanni; Burillo, Guillermina

    2013-09-01

    Poly (dimethylsiloxane) (PDMS) sealant (SS) was modified with the addition of different protective compounds to conserve its physical-chemical properties during gamma irradiation. 2-Vinyl naphthalene (2-VN), bisphenol-A (BPA) and poly (vinyl carbazole) (PVK) were used to evaluate radiation protection through the crosslinking effect of radiation. The samples were irradiated with doses from 100 kGy to 500 kGy at room temperature in air, with a 60Co gamma source, and the changes in molecular weight, thermal behavior, elastic properties and infrared spectra (FTIR-ATR) absorbance analysis were determined. The molecular weight of unmodified silicone sealant increases with the absorbed dose because of crosslinking as predominant effect. However, the crosslinking effect was inhibited with the addition of protective agent due to the aromatic compounds present. Modified silicone sealant films present better radiation resistance than unmodified system.

  18. Crystal growth and evaluation of silicon for VLSI and ULSI

    CERN Document Server

    Eranna, Golla

    2014-01-01

    PrefaceAbout the AuthorIntroductionSilicon: The SemiconductorWhy Single CrystalsRevolution in Integrated Circuit Fabrication Technology and the Art of Device MiniaturizationUse of Silicon as a SemiconductorSilicon Devices for Boolean ApplicationsIntegration of Silicon Devices and the Art of Circuit MiniaturizationMOS and CMOS Devices for Digital ApplicationsLSI, VLSI, and ULSI Circuits and ApplicationsSilicon for MEMS ApplicationsSummaryReferencesSilicon: The Key Material for Integrated Circuit Fabrication TechnologyIntroductionPreparation of Raw Silicon MaterialMetallurgical-Grade SiliconPuri

  19. Silicon assistant carbothermal reduction for SiC powders

    Institute of Scientific and Technical Information of China (English)

    Kezhi Li; Jian Wei; Hejun Li; Chuang Wang; Gengsheng Jiao

    2008-01-01

    The silicon assistant method to increase the reaction yield of carbothermal reduction of silica at a lower temperature is reported. The effect of silicon on the carbothermal reduction process has been investigated in detail. Compared with traditional reduction, the introduction of silicon can change the reaction path and further increase the conversion of silicon carbide at a lower temperature. It is considered that the assistant reduction consists of three steps: vaporizing and melting of silicon, formation of silicon monoxide, and synthesis of silicon carbide. The morphology of the synthesized SiC powders through the silicon assistant method can be affected apparently by the experimental temperature.

  20. The STAR silicon vertex tracker: a large area silicon drift detector

    CERN Document Server

    Lynn, D; Beuttenmüller, Rolf H; Caines, H; Chen, W; Dimassimo, D; Dyke, H; Elliot, D; Eremin, V; Grau, M; Hoffmann, G W; Humanic, T; Ilyashenko, Yu S; Kotov, I; Kraner, H W; Kuczewski, P; Leonhardt, B; Li, Z; Liaw, C J; Lo Curto, G; Middelkamp, P; Minor, R; Munhoz, M; Ott, G; Pandey, S U; Pruneau, C A; Rykov, V L; Schambach, J; Sedlmeir, J; Soja, B; Sugarbaker, E R; Takahashi, J; Wilson, K; Wilson, R

    2000-01-01

    The Solenoidal Tracker At RHIC-Silicon Vertex Tracker (STAR-SVT) is a three barrel microvertex detector based upon silicon drift detector technology. As designed for the STAR-SVT, silicon drift detectors (SDDs) are capable of providing unambiguous two-dimensional hit position measurements with resolutions on the order of 20 mu m in each coordinate. Achievement of such resolutions, particularly in the drift direction coordinate, depends upon certain characteristics of silicon and drift detector geometry that are uniquely critical for silicon drift detectors hit measurements. Here we describe features of the design of the STAR-SVT SDDs and the front-end electronics that are motivated by such characteristics.

  1. Highly trifluoromethylated platinum compounds.

    Science.gov (United States)

    Martínez-Salvador, Sonia; Forniés, Juan; Martín, Antonio; Menjón, Babil

    2011-07-11

    The homoleptic, square-planar organoplatinum(II) compound [NBu(4)](2) [Pt(CF(3))(4)] (1) undergoes oxidative addition of CF(3) I under mild conditions to give rise to the octahedral organoplatinum(IV) complex [NBu(4)](2) [Pt(CF(3))(5)I] (2). This highly trifluoromethylated species reacts with Ag(+) salts of weakly coordinating anions in Me(2)CO under a wet-air stream to afford the aquo derivative [NBu(4)][Pt(CF(3))(5) (OH(2))] (4) in around 75% yield. When the reaction of 2 with the same Ag(+) salts is carried out in MeCN, the solvento compound [NBu(4) ][Pt(CF(3))(5)(NCMe)] (5) is obtained in around 80% yield. The aquo ligand in 4 as well as the MeCN ligand in 5 are labile and can be cleanly replaced by neutral and anionic ligands to furnish a series of pentakis(trifluoromethyl)platinate(IV) compounds with formulae [NBu(4)][Pt(CF(3))(5) (L)] (L=CO (6), pyridine (py; 7), tetrahydrothiophene (tht; 8)) and [NBu(4)](2) [Pt(CF(3))(5)X] (X=Cl (9), Br (10)). The unusual carbonyl-platinum(IV) derivative [NBu(4)][Pt(CF(3))(5) (CO)] (6) is thermally stable and has a ν(CO) of 2194 cm(-1). The crystal structures of 2⋅CH(2)Cl(2), 5, [PPh(4) ][Pt(CF(3))(5)(CO)] (6'), and 7 have been established by X-ray diffraction methods. Compound 2 has shown itself to be a convenient entry to the chemistry of highly trifluoromethylated platinum compounds. To the best of our knowledge, compounds 2 and 4-10 are the organoelement compounds with the highest CF(3) content to have been isolated and adequately characterized to date.

  2. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu; Holman, Zachary C. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States)

    2015-08-14

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  3. Process for making silicon carbide reinforced silicon carbide composite

    Science.gov (United States)

    Lau, Sai-Kwing (Inventor); Calandra, Salavatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    1998-01-01

    A process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  4. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  5. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  6. Enhanced Sintering of Boron Carbide-Silicon Composites by Silicon

    Science.gov (United States)

    Zeng, Xiaojun; Liu, Weiliang

    2016-09-01

    Boron carbide (B4C)-silicon (Si) composites have been prepared by aqueous tape casting, laminating, and spark plasma sintering (SPS). The influences of silicon (Si) content on the phases, microstructure, sintering properties, and mechanical properties of the obtained B4C-Si composites are studied. The results indicate that the addition of Si powder can act as a sintering aid and contribute to the sintering densification. The addition of Si powder can also act as a second phase and contribute to the toughening for composites. The relative density of B4C-Si composites samples with adding 10 wt.% Si powder prepared by SPS at 1600 °C and 50 MPa for 8 min is up to 98.3%. The bending strength, fracture toughness, and Vickers hardness of the sintered samples are 518.5 MPa, 5.87 MPa m1/2, and 38.9 GPa, respectively. The testing temperature-dependent high-temperature bending strength and fracture toughness can reach a maximum value at 1350 °C. The B4C-Si composites prepared at 1600, 1650, and 1700 °C have good high-temperature mechanical properties. This paper provides a facile low-temperature sintering route for B4C ceramics with improved properties.

  7. Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

    Science.gov (United States)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

    2003-01-01

    Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

  8. Enhanced Sintering of Boron Carbide-Silicon Composites by Silicon

    Science.gov (United States)

    Zeng, Xiaojun; Liu, Weiliang

    2016-11-01

    Boron carbide (B4C)-silicon (Si) composites have been prepared by aqueous tape casting, laminating, and spark plasma sintering (SPS). The influences of silicon (Si) content on the phases, microstructure, sintering properties, and mechanical properties of the obtained B4C-Si composites are studied. The results indicate that the addition of Si powder can act as a sintering aid and contribute to the sintering densification. The addition of Si powder can also act as a second phase and contribute to the toughening for composites. The relative density of B4C-Si composites samples with adding 10 wt.% Si powder prepared by SPS at 1600 °C and 50 MPa for 8 min is up to 98.3%. The bending strength, fracture toughness, and Vickers hardness of the sintered samples are 518.5 MPa, 5.87 MPa m1/2, and 38.9 GPa, respectively. The testing temperature-dependent high-temperature bending strength and fracture toughness can reach a maximum value at 1350 °C. The B4C-Si composites prepared at 1600, 1650, and 1700 °C have good high-temperature mechanical properties. This paper provides a facile low-temperature sintering route for B4C ceramics with improved properties.

  9. Subconjunctival and Orbital Silicone Oil Granuloma (Siliconoma Complicating Intravitreal Silicone Oil Tamponade

    Directory of Open Access Journals (Sweden)

    Jung Hye Lee

    2014-01-01

    Full Text Available A 30-year-old male, who underwent previous pars plana vitrectomy and silicone oil tamponade due to endogenous endophthalmitis originated from Klebsiella liver abscess, was referred for evisceration. At 2 months after vitrectomy with silicon oil tamponade, conjunctival chemosis and ocular pain were aggravated. Diffuse eyelid swelling and large subconjunctival mass with lipid droplets were noted. On MRI examination, subconjunctival mass and intra- and extraconal orbital mass around superior rectus muscle were observed. Excision of subconjunctival and orbital mass was performed. Histopathologic examination showed multiple silicone oil vacuoles surrounded by foreign body giant cells and fibrosis, which confirmed silicone oil granuloma. In a patient with suspicious melting sclera in diseases such as endophthalmitis, large silicone oil granuloma may be complicated in a rapid fashion after intravitreal silicone oil tamponade due to silicone oil leakage.

  10. Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

    Science.gov (United States)

    Ciszek, T. F.; Schwuttke, G. H. (Inventor)

    1979-01-01

    A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

  11. Fracture dynamics in implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Massy, D.; Tardif, S.; Penot, J. D.; Ragani, J.; Rieutord, F. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, INAC-SP2M, F-38000 Grenoble (France); Mazen, F.; Madeira, F. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Landru, D.; Kononchuk, O. [SOITEC, Parc Technologique des Fontaines, 38190 Bernin (France)

    2015-08-31

    Crack propagation in implanted silicon for thin layer transfer is experimentally studied. The crack propagation velocity as a function of split temperature is measured using a designed optical setup. Interferometric measurement of the gap opening is performed dynamically and shows an oscillatory crack “wake” with a typical wavelength in the centimetre range. The dynamics of this motion is modelled using beam elasticity and thermodynamics. The modelling demonstrates the key role of external atmospheric pressure during crack propagation. A quantification of the amount of gas trapped inside pre-existing microcracks and released during the fracture is made possible, with results consistent with previous studies.

  12. Silicon nanowires as intracellular devices

    Science.gov (United States)

    Zimmerman, John F.

    Semiconductor nanowire devices are an exciting class of materials for biomedical and electrophysiology applications, with current studies primarily delivering substrate bound devices through mechanical abrasion or electroporation. However, the ability to distribute these devices in a drug-like fashion is an important step in developing next-generation active therapeutic devices. In this work, we will discuss the interaction of label free Silicon nanowires (SiNWs) with cellular systems, showing that they can be internalized in multiple cell lines, and undergo an active 'burst-like' transport process. (Abstract shortened by ProQuest.).

  13. Enamel, Silicone Alkyd Copolymer (Metric)

    Science.gov (United States)

    2007-11-02

    shall consist of a copolymerized, air- drying, silicone modified long oil soya alkyd conforming to the requirements of table IV (see table VI...anhydride, percent by weight of nonvolatile vehicle Drying oil acids, percent by weight of nonvolatile vehicle Soya oil Rosin Phenolic resin...FED-STD-141 method Test Drying time 1/ Table V 4.6.17 Accelerated weathering 3.5.13 4061.2 D 523, D 569, D 2244, E 97, G 53 4.6.18 Soya

  14. The CDF Silicon Vertex Detector

    Energy Technology Data Exchange (ETDEWEB)

    Tkaczyk, S.; Carter, H.; Flaugher, B. [and others

    1993-09-01

    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the detector in the radiation environment are discussed. The device has been taking colliding beams data since May of 1992, performing at its best design specifications and enhancing the physics program of CDF.

  15. Microfabricated silicon biosensors for microphysiometry

    Science.gov (United States)

    Bousse, L. J.; Libby, J. M.; Parce, J. W.

    1993-01-01

    Microphysiometers are biosensor devices that measure the metabolic rate of living cells by detecting the rate of extracellular acidification caused by a small number of cells. The cells are entrapped in a microvolume chamber, whose bottom surface is a silicon sensor chip. In a further miniaturization step, we have recently fabricated multichannel flow-through chips that will allow greater throughput and multiplicity. Microphysiometer technology can be applied to the detection of microorganisms. We describe the sensitive detection of bacteria and yeast. Further applications of microphysiometry to the characterization of microorganisms can be anticipated.

  16. Process Challenges in Compound Semiconductors.

    Science.gov (United States)

    1988-08-01

    development; these are Japanese suppliers. Silicon technology teaches that, as devices and processes become more sophisticated, the requirements on substrates...following recommendations are presented: • Develop a fundamental understanding of the thermochemistry of impurity activation and lattice healing

  17. Nomenclature of chemical compounds

    Directory of Open Access Journals (Sweden)

    Karolina Kaczmarek

    2009-01-01

    Full Text Available This article presents the mechanisms of the inorganic chemistry nomenclature formation in French language. It shows the structure and the way of presenting the names of chemical compounds either descriptively or by giving the structural formulas’ characteristics, their transcription and order of reading the letters. The text specifies the rules of naming a chemical compound, according to the criteria of IUPAC (Union of Pure and Applied Chemistry, the organisation responsible for digesting the chemical nomenclature. The article contains the transcription chart and the manner of reading the structural formula, also called latero-numerical. Additionally, there is information conceming the usage of the common names given, still remaining in use next to the names compatible with those of IUPAC. Particular types of chemical compounds have served as models for description of other nomenclature formation rules from the simplest structures to the complicated compound ones. A short summary presents the relations and similarities between the names of particular types of chemical compounds.

  18. Silicon based ultrafast optical waveform sampling

    DEFF Research Database (Denmark)

    Ji, Hua; Galili, Michael; Pu, Minhao

    2010-01-01

    A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode-locker...

  19. Silicon solar cells: Physical metallurgy principles

    Science.gov (United States)

    Mauk, Michael G.

    2003-05-01

    This article reviews the physical metallurgy aspects of silicon solar cells. The production of silicon solar cells relies on principles of thermochemical extractive metallurgy, phase equilibria, solidification, and kinetics. The issues related to these processes and their impact on solar cell performance and cost are discussed.

  20. Silicon spintronics with ferromagnetic tunnel devices

    NARCIS (Netherlands)

    Jansen, R.; Dash, S. P.; Sharma, S.; Min, B. C.

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of

  1. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  2. Silicon Timing Response to Particles and Light

    Energy Technology Data Exchange (ETDEWEB)

    Ronzhin, Anatoly [Fermilab; Spiropulu, Maria [Caltech

    2015-01-01

    It is observed growing interest to fast timing detectors in high energy physics, related, for example, with collider luminosity increase (LHC) [1]. The options of CMS [2] calorimeter upgrade based on silicon detectors renewed interest to the timing study of this type of detectors. The article is devoted to study of silicon timing response to particles and light.

  3. Performance of Ultra-Fast Silicon Detectors

    CERN Document Server

    Cartiglia, N; Ely, S; Fadeyev, V; Galloway, Z; Marchetto, F; Mazza, G; Ngo, J; Obertino, M; Parker, C; Rivetti, A; Shumacher, D; Sadrozinski, H F-W; Seiden, A; Zatserklyaniy, A

    2013-01-01

    The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond.

  4. Bubble Formation in Silicon-Quartz Interface

    OpenAIRE

    Kakimoto, K.; EGUCHI, M.; Ozoe, H.

    1997-01-01

    Bubble formation at an interface between silicon melt and a quartz crucible was studied by thermodynamical calculation and visualization of bubble formation using X-ray radiography. A phase diagram of silicon-oxygen (Si-O) system is also calculated from the reported thermodynamical data. Critical temperature and radius of bubble formation at the interface was discussed.

  5. R & D for the CMS silicon tracker

    CERN Document Server

    Feld, L; Angarano, M M; Azzi, P; Babucci, E; Bacchetta, N; Bader, A J; Bagliesi, G; Barr, A J; Bartalini, P; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Civinini, C; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Della Marina, R; Dutta, S; Eklund, C; Peisert, Anna; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Fürtjes, A; Giassi, A; Giraldo, A; Glessing, W D; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Honkanen, J A; Hrubec, Josef; Huhtinen, M; Kaminski, A; Karimäki, V; Kellogg, R G; König, S J; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Raffaelli, F; Raso, G; Raymond, M; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Skog, K; Starodumov, Andrei; Stavitski, I; Stefanini, G; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Xie, Z; Wang, Y; Watts, S; Wittmer, B

    1999-01-01

    The CMS silicon tracker, consisting of about 70 m/sup 2/ of silicon microstrip devices, has to be operated for at least 10 years in a harsh radiation environment. The main implications of this environment on the detector design are summarized and an overview of the expected performance is given. (2 refs).

  6. Silicon nanostructures produced by laser direct etching

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Dirac, Paul Andreas Holger; Petersen, Jon Wulff

    1995-01-01

    A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only...

  7. Micromachined silicon plates for sensing molecular interactions

    NARCIS (Netherlands)

    Carlen, E.T.; Weinberg, M.S.; Dube, C.E.; Zapata, A.M.; Borenstein, J.T.

    2006-01-01

    A micromachined surface stress sensor based on a thin suspended crystalline silicon circular plate measures differential surface stress changes associated with vapor phase chemisorption of an alkanethiol self-assembled monolayer. The isolated face of the suspended silicon plate serves as the sensing

  8. Silicon LEDs in FinFET technology

    NARCIS (Netherlands)

    Piccolo, G.; Kuindersma, P.I.; Ragnarsson, L-A.; Hueting, R.J.E.; Collaert, N.; Schmitz, J.

    2014-01-01

    We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped activ

  9. Hydroxide catalysis bonding of silicon carbide

    NARCIS (Netherlands)

    Veggel, A.A. van; Ende, D.A. van den; Bogenstahl, J.; Rowan, S.; Cunningham, W.; Gubbels, G.H.M.; Nijmeijer, H.

    2008-01-01

    For bonding silicon carbide optics, which require extreme stability, hydroxide catalysis bonding is considered [Rowan, S., Hough, J. and Elliffe, E., Silicon carbide bonding. UK Patent 040 7953.9, 2004. Please contact Mr. D. Whiteford for further information: D.Whiteford@admin.gla.ac.uk]. This techn

  10. Note: Near infrared interferometric silicon wafer metrology.

    Science.gov (United States)

    Choi, M S; Park, H M; Joo, K N

    2016-04-01

    In this investigation, two near infrared (NIR) interferometric techniques for silicon wafer metrology are described and verified with experimental results. Based on the transparent characteristic of NIR light to a silicon wafer, the fiber based spectrally resolved interferometry can measure the optical thickness of the wafer and stitching low coherence scanning interferometry can reconstruct entire surfaces of the wafer.

  11. Piezoresistance in p-type silicon revisited

    DEFF Research Database (Denmark)

    Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads;

    2008-01-01

    We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find that the ...

  12. Oblique patterned etching of vertical silicon sidewalls

    Science.gov (United States)

    Bruce Burckel, D.; Finnegan, Patrick S.; David Henry, M.; Resnick, Paul J.; Jarecki, Robert L.

    2016-04-01

    A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.

  13. Microstructuring of silicon with femtosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Freund, Waldemar; Richters, Jan P.; Voss, Tobias; Gutowski, Juergen [Institute of Solid State Physics, Semiconductor Optics Group, University of Bremen (Germany)

    2011-07-01

    Silicon structured with ultrashort laser pulses which is called ''black silicon'' due to its dark appearance has been a field of intense studies in recent years. It exhibits a nearly uniform absorptivity beyond 90% in the whole visible to near-infrared spectral region. Therefore, it is a promising material for applications in solar cells and photo diodes. In this talk a brief introduction of microstructuring of silicon with ultrashort laser pulses will be given. Structuring is carried out in a sulfurhexafluoride (SF{sub 6}) atmosphere, which simultaneously allows doping of the silicon with sulfur far above the solubility limit. The structuring leads to a specific quasiperiodic surface morphology at which incident light is reflected multiple times. Thus light absorption in the silicon is considerably enhanced. The extremely high doping with sulfur results in the formation of a distinct defect band which is the origin of high absorptance in the near infrared. Furthermore, sulfur acts as a donor in silicon. Hence, microstructuring of p-doped silicon in SF{sub 6} atmosphere leads to the formation of a p-n{sup +} junction. This is an important step towards the fabrication of efficient solar cells and photo diodes with increased infrared sensitivity on base of easy-to-produce black silicon.

  14. Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

    Science.gov (United States)

    Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

    1977-01-01

    The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

  15. Mechanism of single atom switch on silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

    1998-01-01

    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...

  16. Silicon spintronics with ferromagnetic tunnel devices

    NARCIS (Netherlands)

    Jansen, R.; Dash, S. P.; Sharma, S.; Min, B. C.

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of sil

  17. Ultrafast laser functionalized rare phased gold-silicon/silicon oxide nanostructured hybrid biomaterials.

    Science.gov (United States)

    Premnath, P; Tan, B; Venkatakrishnan, K

    2015-12-01

    We introduce a hybrid nanostructured biomaterial that is a combination of rare phases of immiscible gold and silicon oxide, functionalized via ultrafast laser synthesis. For the first time, we show cancer controlling properties of rare phases of gold silicides, which include Au7Si, Au5Si, Au0.7Si2.3 and Au8Si2. Conventionally, pure forms of gold and silicon/silicon oxide are extensively employed in targeted therapy and drug delivery systems due to their unique properties. While silicon and silicon oxide nanoparticles have shown biocompatibility, gold nanoparticles show conflicting results based on their size and material properties. Several studies have shown that gold and silicon combinations produce cell controlling properties, however, these studies were not able to produce a homogenous combination of gold and silicon, owing to its immiscibility. A homogenous combination of gold and silicon may potentially enable properties that have not previously been reported. We describe rare phased gold-silicon oxide nanostructured hybrid biomaterials and its unique cancer controlling properties, owing to material properties, concentration, size and density. The gold-silicon oxide nanostructured hybrid is composed of individual gold-silicon oxide nanoparticles in various concentrations of gold and silicon, some nanoparticles possess a gold-core and silicon-shell like structure. The individual nanoparticles are bonded together forming a three dimensional nanostructured hybrid. The interaction of the nanostructured hybrids with cervical cancer cells showed a 96% reduction in 24h. This engineered nanostructured hybrid biomaterial presents significant potential due to the combination of immiscible gold and silicon oxide in varying phases and can potentially satiate the current vacuum in cancer therapy.

  18. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    Science.gov (United States)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  19. Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

    Science.gov (United States)

    Naddaf, M.

    2017-01-01

    Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

  20. Elemental and compound semiconductor surface chemistry: Intelligent interfacial design facilitated through novel functionalization and deposition strategies

    Science.gov (United States)

    Porter, Lon Alan, Jr.

    The fundamental understanding of silicon surface chemistry is an essential tool for silicon's continued dominance of the semiconductor industry in the years to come. By tapping into the vast library of organic functionalities, the synthesis of organic monolayers may be utilized to prepare interfaces, tailored to a myriad of applications ranging from silicon VLSI device optimization and MEMS to physiological implants and chemical sensors. Efforts in our lab to form stable organic monolayers on porous silicon through direct silicon-carbon linkages have resulted in several efficient functionalization methods. In the first chapter of this thesis a comprehensive review of these methods, and many others is presented. The following chapter and the appendix serve to demonstrate both potential applications and studies aimed at developing a fundamental understanding of the chemistry behind the organic functionalization of silicon surfaces. The remainder of this thesis attempts to demonstrate new methods of metal deposition onto both elemental and compound semiconductor surfaces. Currently, there is considerable interest in producing patterned metallic structures with reduced dimensions for use in technologies such as ULSI device fabrication, MEMS, and arrayed nanosensors, without sacrificing throughput or cost effectiveness. Research in our laboratory has focused on the preparation of precious metal thin films on semiconductor substrates via electroless deposition. Continuous metallic films form spontaneously under ambient conditions, in the absence of a fluoride source or an externally applied current. In order to apply this metallization method toward the development of useful technologies, patterning utilizing photolithography, microcontact printing, and scanning probe nanolithography has been demonstrated.

  1. Recent trends in silicon carbide device research

    Directory of Open Access Journals (Sweden)

    Munish Vashishath

    2008-08-01

    Full Text Available Silicon carbide (SiC has revolutionised semiconductor power device performance. It is a wide band gap semiconductor with an energy gap wider than 2eV and possesses extremely high power, high voltage switching characteristics and high thermal, chemical and mechanical stability. The SiC wafers are available in 6H, 4H, 2H and 3C polytypes. Because of its wide band gap, the leakage current of SiC is many orders of magnitude lower than that of silicon. Also, forward resistance of SiC power devices is approximately 200 times lower than that of conventional silicon devices. The breakdown voltage of SiC is 8-10 times higher than that of silicon. In this paper, silicon carbide Schottky barrier diodes, power MOSFETs, UMOSFET, lateral power MOSFET, SIT (static induction transistor, and nonvolatile memories are discussed along with their characteristics and applications.

  2. Fabricating solar cells with silicon nanoparticles

    Science.gov (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  3. Silicon quantum dots for biological applications.

    Science.gov (United States)

    Chinnathambi, Shanmugavel; Chen, Song; Ganesan, Singaravelu; Hanagata, Nobutaka

    2014-01-01

    Semiconductor nanoparticles (or quantum dots, QDs) exhibit unique optical and electronic properties such as size-controlled fluorescence, high quantum yields, and stability against photobleaching. These properties allow QDs to be used as optical labels for multiplexed imaging and in drug delivery detection systems. Luminescent silicon QDs and surface-modified silicon QDs have also been developed as potential minimally toxic fluorescent probes for bioapplications. Silicon, a well-known power electronic semiconductor material, is considered an extremely biocompatible material, in particular with respect to blood. This review article summarizes existing knowledge related to and recent research progress made in the methods for synthesizing silicon QDs, as well as their optical properties and surface-modification processes. In addition, drug delivery systems and in vitro and in vivo imaging applications that use silicon QDs are also discussed.

  4. Silicon nanostructures for cancer diagnosis and therapy.

    Science.gov (United States)

    Peng, Fei; Cao, Zhaohui; Ji, Xiaoyuan; Chu, Binbin; Su, Yuanyuan; He, Yao

    2015-01-01

    The emergence of nanotechnology suggests new and exciting opportunities for early diagnosis and therapy of cancer. During the recent years, silicon-based nanomaterials featuring unique properties have received great attention, showing high promise for myriad biological and biomedical applications. In this review, we will particularly summarize latest representative achievements on the development of silicon nanostructures as a powerful platform for cancer early diagnosis and therapy. First, we introduce the silicon nanomaterial-based biosensors for detecting cancer markers (e.g., proteins, tumor-suppressor genes and telomerase activity, among others) with high sensitivity and selectivity under molecular level. Then, we summarize in vitro and in vivo applications of silicon nanostructures as efficient nanoagents for cancer therapy. Finally, we discuss the future perspective of silicon nanostructures for cancer diagnosis and therapy.

  5. The CDF-II silicon tracking system

    CERN Document Server

    Nelson, T K

    2002-01-01

    The CDF silicon tracking system for Run II of the Fermilab Tevatron consists of eight layers arranged in cylinders spanning radii from 1.35 to 28 cm, and lengths from 90 cm to nearly 2 m for a total of 6 m sup 2 of silicon and 722,000 readout channels. With an innermost layer (Layer 00) utilizing radiation tolerant p sup + -in-n silicon and low-mass readout cables between the sensors and readout electronics, double-sided vertexing layers (SVXII) designed for use with a deadtimeless secondary-vertex trigger, and outermost layers (Intermediate Silicon Layers) utilizing mass-producible modules attached to a carbon fiber spaceframe, this system is a starting point for the next generation of silicon trackers for the LHC and Tevatron.

  6. Dissolution of bulk specimens of silicon nitride

    Science.gov (United States)

    Davis, W. F.; Merkle, E. J.

    1981-01-01

    An accurate chemical characterization of silicon nitride has become important in connection with current efforts to incorporate components of this material into advanced heat engines. However, there are problems concerning a chemical analysis of bulk silicon nitride. Current analytical methods require the pulverization of bulk specimens. A pulverization procedure making use of grinding media, on the other hand, will introduce contaminants. A description is given of a dissolution procedure which overcomes these difficulties. It has been found that up to at least 0.6 g solid pieces of various samples of hot pressed and reaction bonded silicon nitride can be decomposed in a mixture of 3 mL hydrofluoric acid and 1 mL nitric acid overnight at 150 C in a Parr bomb. High-purity silicon nitride is completely soluble in nitric acid after treatment in the bomb. Following decomposition, silicon and hydrofluoric acid are volatilized and insoluble fluorides are converted to a soluble form.

  7. Silicon influence on resistance induction against Bemisia tabaci biotype B (Genn.) (Hemiptera: Aleyrodidae) and on vegetative development in two soybean cultivars.

    Science.gov (United States)

    Ferreira, R S; Moraes, J C; Antunes, C S

    2011-01-01

    The potential of populations of Bemisia tabaci (Genn.) to become resistant to insecticides has stimulated research into alternative tactics of integrated pest management such as the induction of host-plant resistance. Recent data have shown that silicon can increase the degree of resistance of host plants to insect pests. Therefore the aim of our work was to study the effects of silicon application on the vegetative development of soybean plants and on the induction of resistance to the silverleaf whitefly, B. tabaci biotype B. We performed choice and no-choice tests of oviposition preference on two soybean cultivars, IAC-19 (moderately resistant to B. tabaci biotype B) and MONSOY-8001 (susceptible), with and without application of silicon. Silicon did not affect silverleaf whitefly oviposition preferences, but caused significant mortality in nymphs. Thus, silicon increased the degree of resistance to silverleaf whitefly. Silicon decreased the production of phenolic compounds, but did not affect lignin production. However, when applied to cultivar IAC-19, it increased the production of non-protein organic nitrogen. Silicon had no effect on the vegetative development of soybean plants, but it increased the degree of resistance to the silverleaf whitefly. We conclude that silicon applications combined with cultivar IAC-19 can significantly decrease silverleaf whitefly populations, having a positive impact both on the soybean plant and on the environment.

  8. Flavour Compounds in Fungi

    DEFF Research Database (Denmark)

    Ravasio, Davide Antonio

    Fungi produce a variety of volatile organic compounds (VOCs) during their primary or secondary metabolism and with a wide range of functions. The main focus of this research work has been put on flavour molecules that are produced during fermentation processes, mainly esters and alcohols derived...... region is directly regulated by the ScAro80 transcription factor. This interaction has been used to create a lacZ-reporter system to correlate the formation of two volatile compounds, 2- phenylethanol and 2-phenylethyl acetate in yeast with ARO9 expression levels. This indirect genetic assay also....... This resulted in the identification of Wickerhamomyces anomalus and Pichia kluyveri as high producers of esters fruity compounds, which contribute to enhance the complexity of wine and beer product. In addition the strain Debaromyces subglobosus showed high yields of aldehydes and fruity ketones, which...

  9. Thermal stability of comp ound stucture of silicon nanowire encapsulated in carb on nanotub es%碳纳米管包裹的硅纳米线复合结构的热稳定性研究∗

    Institute of Scientific and Technical Information of China (English)

    卢顺顺; 张晋敏; 郭笑天; 高廷红; 田泽安; 何帆; 贺晓金; 吴宏仙; 谢泉

    2016-01-01

    To guide the experiment research, the thermal stability of composite silicon nanowire encapsulated in carbon nanotubes is investigated by computer simulation. The cubic-diamond-structured silicon nanowires with the same diameter and [111] orientationt are filled in some armchaired single-walled carbon nanotubes. The heat process of compound structure of silicon nanowire encapsulated in carbon nanotubes is simulated by classical molecular dynamic method. Through the visualization and energy analysis method, the thermal stability of composite structure is studied. The changes in the thermal stability of silicon nanowires and carbon nanotubes are explained by the relationship between carbon nanotube space constraint and van der Waals force. It is found that the diameter of the carbon nanotubes is closely related to the thermal stability of silicon nanowires inside. When the nanotube diameter is small, thermal stability of silicon nanowires increases;when the nanotube diameter increases up to a certain size, the thermal stability of silicon nanowires will suddenly drop significantly: until the distance between silicon nanowires and the wall of carbon nanotube is greater than 1 nm, the thermal stability of silicon nanowires will be restored. On the other hand, silicon nanowires filled into the carbon nanotubes have an effect of reducing the thermal stability of carbon nanotubes.

  10. Computational and Physical Analysis of Catalytic Compounds

    Science.gov (United States)

    Wu, Richard; Sohn, Jung Jae; Kyung, Richard

    2015-03-01

    Nanoparticles exhibit unique physical and chemical properties depending on their geometrical properties. For this reason, synthesis of nanoparticles with controlled shape and size is important to use their unique properties. Catalyst supports are usually made of high-surface-area porous oxides or carbon nanomaterials. These support materials stabilize metal catalysts against sintering at high reaction temperatures. Many studies have demonstrated large enhancements of catalytic behavior due to the role of the oxide-metal interface. In this paper, the catalyzing ability of supported nano metal oxides, such as silicon oxide and titanium oxide compounds as catalysts have been analyzed using computational chemistry method. Computational programs such as Gamess and Chemcraft has been used in an effort to compute the efficiencies of catalytic compounds, and bonding energy changes during the optimization convergence. The result illustrates how the metal oxides stabilize and the steps that it takes. The graph of the energy computation step(N) versus energy(kcal/mol) curve shows that the energy of the titania converges faster at the 7th iteration calculation, whereas the silica converges at the 9th iteration calculation.

  11. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  12. Effect of silicon on the morphology of the midgut and mandible of tomato leafminer Tuta absoluta (Lepidoptera: Gelechiidae larvae

    Directory of Open Access Journals (Sweden)

    MC dos Santos

    2015-05-01

    Full Text Available Tuta absoluta (Meyrick (Lepidoptera: Gelechiidae is an important insect pest causing serious losses to tomato plantations in Brazil. Some populations of T. absolute are reported to present insecticide resistance resulting in its control failure and the use of alternative control based on silicon, which is clean and sustainable, can reduce pesticide use, increasing fruit quality and protecting the environment. This study evaluated changes in the morphology of the midgut and the mandibles of T. absoluta larvae caused by feeding with compounds containing silicon. Larvae of T. absoluta were fed on tomato leaves with different compounds containing silicon and the histology of the midgut of fourth instar larvae was analyzed. The mandibles of all larval stages were dissected and analysed by scanning electron microscopy. There were no changes in the morphology of the mandibles of the larvae of T. absoluta fed on silicon compared to the control group. Larvae of T. absoluta from the control group and the treatments where the calcium silicate was applied to the soil had not differences in the morphology of the midgut epithelial cells, which had four cell types: digestive, goblet, regenerative and mycetocyte cells. In larvae of T. absoluta obtained from silicon-based treatments applied to the leaves, the midgut epithelium showed detachment of the basal membrane, which can characterize the possible effect of this toxic element to larvae of T. absoluta.

  13. Donor deactivation in silicon nanostructures

    Science.gov (United States)

    Björk, Mikael T.; Schmid, Heinz; Knoch, Joachim; Riel, Heike; Riess, Walter

    2009-02-01

    The operation of electronic devices relies on the density of free charge carriers available in the semiconductor; in most semiconductor devices this density is controlled by the addition of doping atoms. As dimensions are scaled down to achieve economic and performance benefits, the presence of interfaces and materials adjacent to the semiconductor will become more important and will eventually completely determine the electronic properties of the device. To sustain further improvements in performance, novel field-effect transistor architectures, such as FinFETs and nanowire field-effect transistors, have been proposed as replacements for the planar devices used today, and also for applications in biosensing and power generation. The successful operation of such devices will depend on our ability to precisely control the location and number of active impurity atoms in the host semiconductor during the fabrication process. Here, we demonstrate that the free carrier density in semiconductor nanowires is dependent on the size of the nanowires. By measuring the electrical conduction of doped silicon nanowires as a function of nanowire radius, temperature and dielectric surrounding, we show that the donor ionization energy increases with decreasing nanowire radius, and that it profoundly modifies the attainable free carrier density at values of the radius much larger than those at which quantum and dopant surface segregation effects set in. At a nanowire radius of 15 nm the carrier density is already 50% lower than in bulk silicon due to the dielectric mismatch between the conducting channel and its surroundings.

  14. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  15. Chemical Reactions of Silicon Clusters

    CERN Document Server

    Ramakrishna, M V; Ramakrishna, Mushti V.; Pan, Jun

    1994-01-01

    Smalley and co-workers discovered that chemisorption reactivities of silicon clusters vary over three orders of magnitude as a function of cluster size. In particular, they found that \\Si{33}, \\Si{39}, and \\Si{45} clusters are least reactive towards various reagents compared to their immediate neighbors in size. We explain these observations based on our stuffed fullerene model. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry gives rise to four-fold coordinated crown atoms and $\\pi$-bonded dimer pairs. This model yields unique structures for \\Si{33}, \\Si{39}, and \\Si{45} clusters without any dangling bonds and thus explains their lowest reactivity towards chemisorption of closed shell reagents. This model is also consistent with the experimental finding of Jarrold and Constant that silicon clusters undergo a transition from prolate to spherical shapes at \\Si{27}. We justify our model based on an in depth analys...

  16. Coating of silicon pore optics

    DEFF Research Database (Denmark)

    Cooper-Jensen, Carsten P.; Ackermann, M.; Christensen, Finn Erland

    2009-01-01

    For the International X-ray observatory (IXO), a mirror module with an effective area of 3 m2 at 1.25 keV and at least 0.65 m2 at 6 keV has to be realized. To achieve this goal, coated silicon pore optics has been developed over the last years. One of the challenges is to coat the Si plates...... and still to realize Si-Si bonding. It has been demonstrated that ribbed silicon plates can be produced and assembled into stacks. All previously work has been done using uncoated Si plates. In this paper we describe how to coat the ribbed Si plates with an Ir coating and a top C coating through a mask so...... that there will be coating only between the ribs and not in the area where bonding takes place. The paper includes description of the mounting jig and how to align the mask on top of the plate. We will also present energy scans from Si plates coated through a mask....

  17. A CMOS silicon spin qubit

    Science.gov (United States)

    Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

    2016-11-01

    Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

  18. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  19. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiCx(p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiCx(p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiCx(p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm(-2) on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a Voc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p(+)/p-wafer full-side-passivated rear-side scheme shown here.

  20. Stoichiometric silicon oxynitride thin films reactively sputtered in Ar/N2O plasmas by HiPIMS

    Science.gov (United States)

    Hänninen, Tuomas; Schmidt, Susann; Wissting, Jonas; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2016-04-01

    Silicon oxynitride (SiO x N y , x=0.2-1.3, y=0.2 -0.7) thin films were synthesized by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N2O atmospheres. It was found that the composition of the material can be controlled by the reactive gas flow and the average target power. X-ray photoelectron spectroscopy (XPS) shows that high average powers result in more silicon-rich films, while lower target powers yield silicon-oxide-like material due to more pronounced target poisoning. The amount of nitrogen in the films can be controlled by the percentage of nitrous oxide in the working gas. The nitrogen content remains at a constant level while the target is operated in the transition region between metallic and poisoned target surface conditions. The extent of target poisoning is gauged by the changes in peak target current under the different deposition conditions. XPS also shows that varying concentrations and ratios of oxygen and nitrogen in the films result in film chemical bonding structures ranging from silicon-rich to stoichiometric silicon oxynitrides having no observable Si-Si bond contributions. Spectroscopic ellipsometry shows that the film optical properties depend on the amount and ratio of oxygen and nitrogen in the compound, with film refractive indices measured at 633 nm ranging between those of SiO2 and Si3N4.