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Sample records for hydrogenated microcrystalline silicon

  1. Advantages of N-Type Hydrogenated Microcrystalline Silicon Oxide Films for Micromorph Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2013-01-01

    Full Text Available We report on the development and application of n-type hydrogenated microcrystalline silicon oxide films (n μc-SiO:H in hydrogenated amorphous silicon oxide/hydrogenated microcrystalline silicon (a-SiO:H/μc-Si:H micromorph solar cells. The n μc-SiO:H films with high optical bandgap and low refractive index could be obtained when a ratio of carbon dioxide (CO2 to silane (SiH4 flow rate was raised; however, a trade-off against electrical property was observed. We applied the n μc-SiO:H films in the top a-SiO:H cell and investigated the changes in cell performance with respect to the electrical and optical properties of the films. It was found that all photovoltaic parameters of the micromorph silicon solar cells using the n top μc-SiO:H layer enhanced with increasing the CO2/SiH4 ratio up to 0.23, where the highest initial cell efficiency of 10.7% was achieved. The enhancement of the open circuit voltage (Voc was likely to be due to a reduction of reverse bias at subcell connection—n top/p bottom interface—and a better tunnel recombination junction contributed to the improvement in the fill factor (FF. Furthermore, the quantum efficiency (QE results also have demonstrated intermediate-reflector function of the n μc-SiO:H films.

  2. The statistical shift of the chemical potential causing anomalous conductivity in hydrogenated microcrystalline silicon

    NARCIS (Netherlands)

    Lof, R.W.; Schropp, R.E.I.

    2010-01-01

    The behavior of the electrical conductivity in hydrogenated microcrystalline silicon (μ c-Si:H) that is frequently observed is explained by considering the statistical shift in the chemical potential as a function of the crystalline fraction (Xc), the dangling bond density (N db), and the doping den

  3. Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system

    Institute of Scientific and Technical Information of China (English)

    He Bin; Chen Guang-Hua; Zhu Xiu-Hong; Zhang Wen-Li; Ding Yi; Ma Zhan-Jie; Gao Zhi-Hua; Song Xue-Mei; Deng Jin-Xiang

    2006-01-01

    Intrinsic hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared by hot-wire-assisted microwave electron-cyclotron-resonance chemical vapour deposition (Hw-MwECR-CVD) under different deposition conditions.Fourier-transform infrared spectra and Raman spectra were measured.Optical band gap WaS determined by Tauc plots,and experiments of photo-induced degradation were performed.It was observed that hydrogen dilution plays a more essential role than substrate temperature in microcrystalline transformation at low temperatures. Crystalline volume fraction and mean grain size in the films increase with the dilution ratio (R=H2/(H2+SiH4)).With the rise of crystallinity in the films,the optical band gap tends to become narrower while the hydrogen content and photo-induced degradation decrease dramatically.The samples,were identified as μc-Si:H films,by calculating the optical band gap.It is considered that hydrogen dilution has an effect on reducing the crystallization activation energy of the material,which promotes the heterogeneous solid-state phase transition characterized by the Johnson-Mehl-Avrami (JMA) equation.The films with the needed structure can be prepared by balancing deposition and crystaUization through controlling process parameters.

  4. SUBSTRATE EFFECT ON HYDROGENATED MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

    Institute of Scientific and Technical Information of China (English)

    H.D. Yang

    2006-01-01

    Raman spectra and scanning electron microscope (SEM) techniques were used to determine the structural properties of microcrystalline silicon (μc-Si:H) films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition ( VHF-PECVD )technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer,corning 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Corning 7059 glass, the surfaces of the μc-Si:H films are fairly smooth because of the homogenous growth or little lattice mismatch. But for general optical glass, the surface of the μc-Si:H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si:H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material, and then the deposition rates, optical and electrical properties are also strongly influenced, hence,deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si:H films with device-grade quality on cheap substrates such as general glass.

  5. Tailored Voltage Waveform Deposition of Microcrystalline Silicon Thin Films from Hydrogen-Diluted Silane and Silicon Tetrafluoride: Optoelectronic Properties of Films

    Science.gov (United States)

    Johnson, Erik V.; Pouliquen, Sylvain; Delattre, Pierre-Alexandre; Booth, Jean-Paul

    2012-08-01

    The use of tailored voltage waveforms (TVW's) to excite a plasma for the deposition of thin films of hydrogenated microcrystalline silicon (µc-Si:H) has been shown to be an effective technique to decouple mean ion bombardment energy (IBE) from injected power. In this work, we examine the changes in material properties controlled by this technique through Raman scattering and spectroscopic ellipsometry for films deposited from H2-diluted SiH4, and we examine the electrical properties of such films using temperature dependent conductivity. As the laboratory-scale deposition system used had neither a load lock nor an oxygen filter in the H2 line, accidental O-doping was observed for the µc-Si:H films. We investigated suppression of this doping by adding varying amounts of SiF4, and using an SiF4/Ar pre-etch step to clean the reactor. This technique is shown to be effective in decreasing the accidental doping of the films, and intrinsic µc-Si:H films are produced with an activation energy of up to 0.55 eV. As well, an important difference in the amorphous-to-microcrystalline transition is observed once SiF4 is included in the gas mixture.

  6. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

  7. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced chemic

  8. Optimization of n/i and i/p buffer layers in n-i-p hydrogenated microcrystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    Yuan Yujie; Hou Guofu; Zhang Jianjun; Xue Junming; Cao Liran; Zhao Ying; Geng Xinhua

    2009-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layerson the μc-Si:H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si:H buffer layer at i/p interface. By combining the above methods, the performance ofμc-Si:H single-junction and a-Si:H/μc-Si:H tandemsolar ceils has been significantly improved.

  9. Mechanism insight into the effect of I/P buffer layer on the performance of NIP-type hydrogenated microcrystalline silicon solar cells

    Science.gov (United States)

    Bai, Lisha; Liu, Bofei; Zhao, Jing; Suo, Song; Hou, Guofu; Zhang, Dekun; Sun, Jian; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

    2015-05-01

    A simulation and experimental study on the effect of the buffer layer at the I/P interface on the performance of NIP-type hydrogenated microcrystalline silicon (μc-Si:H) single-junction solar cells is presented. Device-quality hydrogenated amorphous silicon (a-Si:H) material as a buffer layer at the I/P interface obviously improves the performance of NIP-type μc-Si:H single-junction solar cells. In addition to the well-known mechanism that an a-Si:H I/P buffer layer can reduce the recombination current density at I/P interfaces, the optically and electrically calibrated simulations and supporting experimental results in this study illustrate that the performance improvement also originates from the mitigation of the electric screening effect due to the reduced defect density at the I/P interfaces, which reinforces the bulk electric field. Integrating an optimized hydrogen profiling strategy and adding a-Si:H I/P buffer layer yielded an initial efficiency of 9.20% for μc-Si:H single-junction solar cells with an active area of 0.27 cm2. This study may provide new ideas of further improving the performance of NIP-type μc-Si:H single-junction solar cells by mitigating the electric screening effect.

  10. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  11. Effect of TCO/μc-Si:H Interface Modification on Hydrogenated Microcrystalline Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Shin-Wei Liang

    2013-01-01

    Full Text Available The effects of H2 plasma exposure on optical, electrical, and structural properties of fluorine-doped tin oxide (FTO and AZO/FTO substrates have been investigated. With increasing the time of H2-plasma exposure, the hydrogen radical and ions penetrated through the FTO surface to form more suboxides such as SnO and metallic Sn, which was confirmed by the XPS analysis. The Sn reduction on the FTO surface can be effectively eliminated by capping the FTO with a very thin layer of sputtered aluminum-doped zinc oxide (AZO, as confirmed by the XPS analysis. By using the AZO/FTO as front TCO with the subsequent annealing, the p-i-n μc-Si:H cell exhibited a significantly enhanced JSC from 15.97 to 19.40 mA/cm2 and an increased conversion efficiency from 5.69% to 7.09%. This significant enhancement was ascribed to the effective elimination of the Sn reduction on the FTO surface by the thin AZO layer during the Si-based thin-film deposition with hydrogen-rich plasma exposure. Moreover, the subsequent annealing of the sputtered AZO could lead to less defects as well as a better interface of AZO/FTO.

  12. Stability of thin films of microcrystalline silicon under light soaking

    Institute of Scientific and Technical Information of China (English)

    HAN Xiao-yan; Wang Yan; XUE Jun-ming; ZHAO Shu-wen; REN Hui-zhi; ZHAO Ying; LI Yang-xian; GENG Xin-hua

    2006-01-01

    Silicon thin films with different crystalline ratio(Xc) have been deposited by varying silane content(SC) of reactive gases in the RF-PECVD process.The effects of silane content on performance of the materials and the relationship between microstructure and opto-electronic properties were studied by means of Raman measurements,photoconductivity(σph),and dark conductivity(σd),followed by the measurements of light absorption coefficient(α),the product of quantum efficiency,mobility and lifetime (ημτ),before,during and after light soaking,respectively.The results indicate that the microcrystalline silicon near the transition region is suitable to prepare microcrystalline silicon of device grade,and that the amorphous region of the material is responsible to the light induced degradation.

  13. Carrier mobility, band tails and defects in microcrystalline silicon

    Science.gov (United States)

    Reynolds, Steve

    2010-11-01

    The development of microcrystalline silicon thin films and devices is briefly reviewed. Transport mechanisms, and the attendant key parameters of carrier mobility, band-tail width and defect density, are linked to film structure and composition. In particular we discuss the wide (but systematic) variations in time-of-flight mobility and its unusual field-dependence. While microcrystalline silicon remains an inferior semiconductor to single-crystal silicon, we propose, and support by means of a computer model, that present device-grade material may be of sufficient quality to justify re-examining whether useful thin-film bipolar devices might be developed. These could find application as more sensitive photo-detectors, and as current drivers in organic LED displays and logic circuits.

  14. Ambipolar characteristics of microcrystalline silicon thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chan, Kah-Yoong [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany); Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Gordijn, Aad [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Stiebig, Helmut [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Malibu GmbH and Co. KG, 33609 Bielefeld (Germany); Knipp, Dietmar [School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany)

    2010-04-15

    Hydrogenated microcrystalline silicon ({mu}c-Si:H) has recently attracted significant attention as a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on top-gate ambipolar TFTs based on {mu}c-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures below 200 C. Electrons and holes are directly injected into the {mu}c-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm{sup 2}/Vs and 10-15 cm{sup 2}/Vs, respectively. In this work, the electrical characteristics of the top-gate ambipolar {mu}c-Si:H TFTs are described by a simple analytical model that takes the ambipolar transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar {mu}c-Si:H TFTs (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Optical emission spectroscopy study on deposition process of microcrystalline silicon

    Institute of Scientific and Technical Information of China (English)

    Wu Zhi-Meng; Lei Qing-Song; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (SiH*, H*α and H*β) are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH* intensity increases with silane concentration, while the intensities of H*α and H*β increase first and then decrease. When the substrate temperature increases, the SiH* intensity decreases and the intensities of H*α and H*β are constant. The correlation between the intensity ratio of IH*α/ISiH* and the crystalline volume fraction (Xc) of films is confirmed.

  16. Preparation of microcrystalline single junction and amorphous-microcrystalline tandem silicon solar cells entirely by hot-wire CVD

    Energy Technology Data Exchange (ETDEWEB)

    Kupich, M.; Grunsky, D.; Kumar, P.; Schroeder, B. [University of Kaiserslautern (Germany). Department of Physics

    2004-01-25

    The hot-wire chemical vapour deposition (HWCVD) has been used to prepare highly conducting p- and n-doped microcrystalline silicon thin layers as well as highly photoconducting, low defect density intrinsic microcrystalline silicon films. These films were incorporated in all-HWCVD, all-microcrystalline nip and pin solar cells, achieving conversion efficiencies of {eta}=5.4% and 4.5%, respectively. At present, only the nip-structures are found to be stable against light-induced degradation. Furthermore, microcrystalline nip and pin structures have been successfully incorporated as bottom cells in all-hot-wire amorphous-microcrystalline nipnip- and pinpin-tandem solar cells for the first time. So far, the highest conversion efficiencies of the 'micromorph' tandem structures are {eta}=5.7% for pinpin-solar cells and 7.0% for nipnip solar cells. (author)

  17. A fast method to diagnose phase transition from amorphous to microcrystalline silicon

    Institute of Scientific and Technical Information of China (English)

    HOU; GuoFu

    2007-01-01

    A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various silane concentrations. The influence of silane concentration on structural and electrical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time, optical emission spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties, Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism, why both OES and Raman can be used to diagnose the phase transition, was analyzed theoretically.……

  18. Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, T.

    2005-07-01

    A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

  19. Growth and microstructure properties of microcrystalline silicon films deposited using jet-ICPCVD

    Institute of Scientific and Technical Information of China (English)

    Zuo Zewen; Guan Wentian; Xin Yu; Lü Jin; Wang Junzhuan; Pu Lin; Shi Yi; Zheng Youdou

    2011-01-01

    Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD).An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.

  20. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Energy Technology Data Exchange (ETDEWEB)

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  1. Numerical simulations for the effiency improvement of hybrid dye-microcrystalline silicon pin-solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Burdorf, Sven; Bauer, Gottfried Heinrich; Brueggemann, Rudolf [Institut fuer Physik, Carl von Ossietzky Universitaet, Oldenburg (Germany)

    2011-07-01

    Hybrid solar cells consisting of dye sensitizers incorporated in the i-layer of microcrystalline silicon pin solar cell have been proposed and even recently processed. The dye sensitizer molecules are embedded in the matrix and enhance the overall absorption of the dye-matrix system due to their high absorption coefficient in the spectral range interesting for photovoltaic applications. However, the charge transport properties of dyes are quite poor. Microcrystalline silicon on the other hand has acceptable charge transport properties, while the absorption, given a layer thickness in the micron range, is relatively poor. This contribution investigates the effiency improvement of hybrid dye-microcrystalline solar cells compared to pure microcrystalline solar cells by simulation. The results indicate that, under optimal conditions, the effiency can be improved by more than 20 % compared to a pure microcrystalline silicon cell. The thickness reduction for the hybrid system can be as large as 50 % for the same effiency.

  2. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  3. Solution growth of microcrystalline silicon on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  4. Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD

    Institute of Scientific and Technical Information of China (English)

    Gao Yan-Tao; Zhang Xiao-Dan; Zhao Ying; Sun Jian; Zhu Feng; Wei Chang-Chun; Chen Fei

    2006-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) films are fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at a silane concentration of 7% and a varying total gas flow rate (H2+SiH4).Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction (Xc) and dark conductivity decrease. And the intensity of (220) peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy (OES).

  5. High deposition rate processes for the fabrication of microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Michard, S. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Meier, M., E-mail: ma.meier@fz-juelich.de [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Grootoonk, B.; Astakhov, O.; Gordijn, A.; Finger, F. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany)

    2013-05-15

    The increase of deposition rate of microcrystalline silicon absorber layers is an essential point for cost reduction in the mass production of thin-film silicon solar cells. In this work we explored a broad range of plasma enhanced chemical vapor deposition (PECVD) parameters in order to increase the deposition rate of intrinsic microcrystalline silicon layers keeping the industrial relevant material quality standards. We combined plasma excitation frequencies in the VHF band with the high pressure high power depletion regime using new deposition facilities and achieved deposition rates as high as 2.8 nm/s. The material quality evaluated from photosensitivity and electron spin resonance measurements is similar to standard microcrystalline silicon deposited at low growth rates. The influence of the deposition power and the deposition pressure on the electrical and structural film properties was investigated.

  6. The Emitter Having Microcrystalline Surface in Silicon Heterojunction Interdigitated Back Contact Solar Cells

    Science.gov (United States)

    Ji, Kwang-sun; Syn, Hojung; Choi, Junghoon; Lee, Heon-Min; Kim, Donghwan

    2012-10-01

    In producing the Si heterojunction interdigitated backcontact solar cells, we investigated the feasibility of applying amorphous Si emitter having considerable crystalline Si phase at the facing to transparent conducting oxide (TCO) layer. Prior to evaluating electrical property, we characterized material nature of hydrogenated microcrystalline p-type silicon (µc-p-Si:H) as crystallized fraction, surface morphology, bonding kinds in thin films and then surface passivation quality finally. The diode and interface contact characteristics were induced by the simple test device and then current-voltage (I-V) curve showed more linearity in µc/hydrogenated amorphous silicon (a-Si:H) emitter case. We fabricated heterojunction back contact (HBC) solar cells using p/n interdigitated structure and acquired the 23.4% efficiency in cell size with performance parameters as open-circuit voltage (Voc) 723 mV, short-circuit current density (Jsc) 41.8 mA/cm2, fill factor (FF) 0.774, in the cell size (at 2×2 cm2).

  7. Microcrystalline silicon from very high frequency plasma deposition and hot-wire CVD for ``micromorph`` tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Brummack, H.; Brueggemann, R.; Wanka, H.N.; Hierzenberger, A.; Schubert, M.B. [Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

    1997-12-31

    The authors have grown microcrystalline silicon from a glow discharge at very high frequencies of 55 MHz and 170 MHz with high hydrogen dilution, and also, at more than 10 times higher growth rates, similar films by hot-wire chemical vapor deposition. Both kinds of materials have extensively been characterized and compared in terms of structural, optical and electronic properties, which greatly improve by deposition in a multi- instead of a single-chamber system. Incorporation of these different materials into pin solar cells results in open circuit voltages of about 400 mV as long as the doped layers are microcrystalline and rise to more than 870 mV if amorphous p- and n-layers are used. Quantum efficiencies and fill factors are still poor but leave room for further improvement, as clearly demonstrated by a remarkable reverse bias quantum efficiency gain.

  8. Electron spin resonance and transient photocurrent measurements on microcrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dylla, T.

    2004-09-01

    The electronic properties of microcrystalline silicon ({mu}c-Si:H) films have been studied using electron spin resonance (ESR), transient photocurrent time-of-flight (TOF) techniques, and electrical conductivity measurements. Structural properties were determined by Raman spectroscopy. A wide range of structure compositions, from highly crystalline films with no discernable amorphous content, to predominantly amorphous films with no crystalline phase contributions, was investigated. Models and possible explanations concerning the nature and energetic distribution of electronic defects as a function of film composition are discussed. It is shown that the spin density N{sub S} in {mu}c-Si:H films is linked strongly to the structure composition of the material. Both reversible and irreversible changes in the ESR signal and dark conductivity due to atmospheric effects are found in {mu}c-Si:H. The porous structure of highly crystalline material facilitates in-diffusion of atmospheric gases, which strongly affects the character and/or density of surface states. Two contributing processes have been identified, namely adsorption and oxidation. Both processes lead to an increase of N{sub S}. Measurements on n-type {mu}c-Si:H films were used as a probe of the density of gap states, confirming that the spin density NS is related to the density of defects. The results confirm that for a wide range of structural compositions, the doping induced Fermi level shift in {mu}c-Si:H is governed by compensation of defect states, for doping concentrations up to the dangling bond spin density. At higher concentrations a doping efficiency close to unity was found, confirming that in {mu}c-Si:H the measured spin densities represent the majority of gap states (N{sub S}=N{sub DB}). By applying the TOF technique to study pin solar cells based on {mu}c-Si:H, conclusive hole drift mobility data were obtained. Despite the predominant crystallinity of these samples, the temperature-dependence of

  9. Conventional and 360 degree electron tomography of a micro-crystalline silicon solar cell

    DEFF Research Database (Denmark)

    Duchamp, Martial; Ramar, Amuthan; Kovács, András

    2011-01-01

    Bright-field (BF) and annular dark-field (ADF) electron tomography in the transmission electron microscope (TEM) are used to characterize elongated porous regions or cracks (simply referred to as cracks thereafter) in micro-crystalline silicon (μc-Si:H) solar cell. The limitations of inferring...

  10. Amorphous-to-microcrystalline transition in a-Si:H under hydrogen plasma: Optical and electrical detection

    Energy Technology Data Exchange (ETDEWEB)

    Hadjadj, Aomar; Larbi, Fadila [Groupe de Recherche en Sciences pour l' Ingenieur (GRESPI), Universite de Reims, 51687 Reims cedex 2 (France); Pham, Nans [Groupe de Recherche en Sciences pour l' Ingenieur (GRESPI), Universite de Reims, 51687 Reims cedex 2 (France); Laboratoire de Physique des Interfaces et Couches Minces (LPICM), Ecole Polytechnique, 91128 Palaiseau (France); Roca i Cabarrocas, Pere [Laboratoire de Physique des Interfaces et Couches Minces (LPICM), Ecole Polytechnique, 91128 Palaiseau (France)

    2012-06-15

    The exact role of hydrogen in the crystallization process is still a subject of broad controversies due to the complexity of the overall plasma enhanced chemical vapor deposition (PECVD) process. We have investigated by ellipsometry the amorphous-to-microcrystalline the phase transition in intrinsic and doped hydrogenated amorphous silicon (a-Si:H) thin films during their exposure to a hydrogen plasma in conditions of chemical transport. The whole ellipsometry diagnostics reveal that, while intrinsic and phosphorus-doped a-Si:H present a similar trend during the plasma treatment, boron-doped a-Si:H differs by special features such as a rapid formation of the hydrogen-rich subsurface layer and an early amorphous-to-microcrystalline phase transition. The particular behavior of boron-doped material is also pointed out through the time-evolution of the self-bias voltage on the radio-frequency electrode during the hydrogen plasma treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Factors limiting the open-circuit voltage in microcrystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Chatterjee P.

    2011-11-01

    Full Text Available In studying photovoltaic devices made with silicon thin films and considering them according to their grain size, it is curious that as the crystalline fraction increases, the open-circuit voltage (Voc – rather than approaching that of the single-crystal case – shows a decline. To gain an insight into this behavior, observed in hydrogenated microcrystalline silicon (μc-Si:H solar cells prepared under a variety of deposition conditions, we have used a detailed electrical-optical computer modeling program, ASDMP. Two typical μc-Si:H cells with low (~79% and higher (~93% crystalline volume fractions (Fc, deposited in our laboratory and showing this general trend, were modeled. From the parameters extracted by simulation of their experimental current density – voltage and quantum efficiency characteristics, it was inferred that the higher Fc cell has both a higher band gap defect density as well as a lower band gap energy. Our calculations reveal that the proximity of the quasi-Fermi levels to the energy bands in cells based on highly crystallized μc-Si:H (assumed to have a lower band gap, results in both higher free and trapped carrier densities. The trapped hole population, that is particularly high near the P/I interface, results in a strong interface field, a collapse of the field in the volume, and hence a lower open-circuit voltage. Interestingly enough, we were able to fabricate fluorinated μc-Si:H:F cells having 100% crystalline fraction as well as very large grains, that violate the general trend and show a higher Voc. Modeling indicates that this is possible for the latter case, as also for a crystalline silicon PN cell, in spite of a sharply reduced band gap, because the lower effective density of states at the band edges and a sharply reduced gap defect density overcome the effect of the lower band gap.

  12. Triplet excitons as sensitive spin probes for structure analysis of extended defects in microcrystalline silicon

    Science.gov (United States)

    Meier, Christoph; Teutloff, Christian; Behrends, Jan; Bittl, Robert; Astakhov, Oleksandr; Lips, Klaus

    2016-07-01

    Electrically detected magnetic resonance (EDMR) spectroscopy is employed to study the influence of triplet excitons on the photocurrent in state-of-the-art microcrystalline silicon thin-film solar cells. These triplet excitons are used as sensitive spin probes for the investigation of their electronic and nuclear environment in this mixed-phase material. According to low-temperature EDMR results obtained from solar cells with different microcrystalline silicon that give rise to shallow states in the silicon band gap. The excitons possess a rather delocalized wave function, couple to electron spins in conduction band tail states nearby, and take part in a spin-dependent recombination process. Our study shows that extended defects such as grain boundaries or stacking faults in the crystalline part of the material act as charge carrier traps that can influence the material conductivity.

  13. Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

    Energy Technology Data Exchange (ETDEWEB)

    Donker, M.N. van den

    2006-07-01

    Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

  14. Effects of seed layer on the performance of microcrystalline silicon germanium solar cells

    Institute of Scientific and Technical Information of China (English)

    Cao Yu; Zhang Jianjun; Li Tianwei; Huang Zhenhua; Ma Jun; Yang Xu; Ni Jian

    2013-01-01

    Using plasma enhanced chemical vapor deposition (PECVD) at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium (μc-Si1-xGex:H) i-layer.The effects of seeding processes on the growth of μc-Si 1-x Gex:H i-layers and the performance of μc-Si1-x Gex:H p-in single junction solar cells are investigated.By applying this seeding method,the μc-Si 1-xGex:H solar cell shows a significant improvement in short circuit current density (Jsc) and fill factor (FF) with an acceptable performance of blue response as a μc-Si:H solar cell even when the Ge content x increases up to 0.3.Finally,an improved efficiency of 7.05% is achieved for the μc-Sio.7Ge0.3:H solar cell.

  15. Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Highly conductive boron-doped hydrogenated microcrystalline silicon (μc-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures (Ts) ranging from 90℃ to 270℃. The effects of Ts on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on Ts. As Ts increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at Ts=210℃, 2) the crystalline volume fraction (Xc) and the grain size increase initially, then reach their maximum values at Ts = 140℃, and finally decrease, 3) the dark conductivity (σd),carrier concentration and Hall mobility have a similar dependence on Tg and arrive at their maximum values at Ts=190℃. In addition, it is also observed that at a lower substrate temperature Ts, a higher dopant concentration is required in order to obtain a maximum σd.

  16. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  17. The study of the substrate temperature depended growth properties of microcrystalline silicon films deposited by VHF-PECVD method

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yongsheng, E-mail: chysh2003@zzu.edu.cn [Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052 (China); Chen, Xiping; Hao, Xiuli; Lu, Jingxiao; Yang, Shi-e [Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2013-04-01

    In this paper, we have measured the temperature depended growth properties of hydrogenated microcrystalline silicon (μc-Si:H) films, prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) from SiH{sub 4} and H{sub 2} gas mixtures. And, a 1D plasma model coupled with a well-mixed reactor model is used to simulate the growth process, in which concentrations of gas phase species, the crystalline orientation, the hydrogen content and the deposition rate are calculated. It suggests that the increasing surface fraction of the dangling bonds with the increase of substrate temperatures is responsible for the increase in the grain sizes. At the same time, the observed variations of the X-ray-diffraction intensities and the deposition rates of the films with temperature result from the differences in the growth rates of the facets.

  18. Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Pomaska, M., E-mail: m.pomaksa@fz-juelich.de [Forschungszentrum Jülich, IEK5-Photovoltaics, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany); Beyer, W. [Helmholtz-Zentrum Berlin für Materialien und Energie, Silicon Photovoltaics, Kekuléstrasse 5, 12489 Berlin (Germany); Neumann, E. [Forschungszentrum Jülich, PGI-8-PT, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany); Finger, F.; Ding, K. [Forschungszentrum Jülich, IEK5-Photovoltaics, Wilhelm-Johnen-Strasse, 52425 Jülich (Germany)

    2015-11-30

    Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO{sub x}:H/intrinsic a-SiO{sub x}:H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO{sub x}:H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H deposition. • μc-SiC:H/μc-SiO{sub x}:H/a-SiO{sub x}:H stack a promising front layer configuration • Void expansion at a-SiO{sub x}:H/c-Si interface for deteriorated surface passivation • μc-SiC:H provides a high transparency and electrical conductivity.

  19. Silicone Rubber and Microcrystalline Cellulose Composites with Antimicrobial Properties

    Directory of Open Access Journals (Sweden)

    Virginija JANKAUSKAITĖ

    2014-04-01

    Full Text Available The goal of this study was to create polydimethylsiloxane (PDMS and microcrystalline cellulose (MCC composites with high mechanical properties and antimicrobial activity. Vinyl-terminated PDMS was mixed with bifunctional filler, which combines MCC stiffness and antimicrobial properties of silver nanoparticles. To provide antimicrobial properties the silver nanoparticles in situ were synthesized by chemical reducing method in MCC aqueous suspension. Silver nanoparticles (AgNPs concentration deposited on MCC particles surface was varied. The morphology, antimicrobial activity and mechanical properties of PDMS/MCC composites and their components have been investigated. It was shown that the combination of MCC/AgNPs as a filler and PDMS as matrix advantages bring multifunctional properties to polymer matrix composite. DOI: http://dx.doi.org/10.5755/j01.ms.20.1.4397

  20. Device simulation and modeling of microcrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Takakura, H.; Hamakawa, Y. [Ritsumeikan Univ., Shiga (Japan). Dept. of Photonics

    2002-10-01

    Device modeling for p-i-n junction basis thin film microcrystalline Si solar cells has been examined with a simple model of columnar grain structure utilizing two-dimensional device simulator. The simulation results of solar cell characteristics show that open-circuit voltage (V{sub oc}) and fill factor considerably depend on structural parameters such as grain size and acceptor doping in intrinsic layer, while short-circuit current density (J{sub sc}) is comparatively stable by built-in electric field in the i-layer. It is also found that conversion efficiency of more than 16% could be expected with 1 {sup {mu}}m grain size and well-passivated condition with 10 {sup {mu}}m thick i-layer and optical confinement. (Author)

  1. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  2. Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiao-Dan; Zheng Xin-Xia; Xu Sheng-Zhi; Lin Quan; Wei Chang-Chun; Sun Jian; Geng Xin-Hua; Zhao Ying

    2011-01-01

    We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates.The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO.By controlling boron and phosphorus contaminations,a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm.In tandem devices,by thickness optimization of the microcrystalline silicon bottom solar cell,we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer.In order to enhance the performance of the tandem solar cells,an improved light trapping structure with a ZnO/Al back reflector is used.As a result,a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.

  3. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrakellis, P.; Amanatides, E., E-mail: lef@plasmatech.gr; Mataras, D. [Department of Chemical Engineering, Plasma Technology Laboratory, University of Patras, P.O. Box 140, 26504 Patras (Greece); Kalampounias, A. G. [University of Ioannina, Dep. of Chemistry, 45110, Ioannina (Greece); Spiliopoulos, N. [Department of Physics, University of Patras, P.O. Box 140, 26504 Patras (Greece); Lahootun, V.; Coeuret, F.; Madec, A. [Air Liquide CRCD,1 chemin de la porte des Loges, Les Loges en Josas, 78354 Jouy en Josas (France)

    2016-07-15

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  4. Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

    Directory of Open Access Journals (Sweden)

    Mitsuoki Hishida

    2016-01-01

    Full Text Available Stopping the plasma-enhanced chemical vapor deposition (PECVD once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points, compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD.

  5. Absorption coefficient modeling of microcrystalline silicon thin film using Maxwell-Garnett effective medium theory.

    Science.gov (United States)

    Chen, Sheng-Hui; Wang, Hsuan-Wen; Chang, Ting-Wei

    2012-03-12

    Considering the Mott-Davis density of state model and Rayleigh scattering effect, we present an approach to model the absorption profile of microcrystalline silicon thin films in this paper. Maxwell-Garnett effective medium theory was applied to analyze the absorption curves. To validate the model, several experimental profiles have been established and compared with those results from the model. With the assistance of the genetic algorithm, our results show that the absorption curves from the model are in good agreement with the experiments. Our findings also indicate that, as the crystal volume fraction increases, not only do the defects in amorphous silicon reduce, but the bulk scattering effect is gradually enhanced as well.

  6. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters; Preparacion y Caracterizacion de Dispositivos Fotovoltaicos de Silicio Amorfo con Emisiones Microcristalinos

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J. [CIEMAT. Madrid (Spain)

    1999-11-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p-and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)

  7. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  8. STRUCTURAL PROPERTIES INVESTIGATION ON MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

    Institute of Scientific and Technical Information of China (English)

    H.D. Yang

    2005-01-01

    Raman scattering spectroscopy and scanning electron microscopy (SEM) techniques were used to determine the structural properties of two typical series of microcrystalline silicon(μc-Si:H) films deposited at different VHF plasma power and different working gas pressure by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. Raman spectra measurements show that both crystalline volume fraction Xc and average grain size d of μc-Si: H films are strongly affected by the two deposition conditions and are more sensitive to working gas pressure than VHF plasma power. SEM characterizations have further confirmed that VHF plasma power and working gas pressure could clearly enhance the surface roughness of μc-Si: H films ascribing to polymerization reactions, which is also more sensitive to working gas pressure than VHF plasma power.

  9. Application of scanning Kelvin probe microscopy for the electrical characterization of microcrystalline silicon for photovoltaics

    CERN Document Server

    Breymesser, A

    2000-01-01

    constructed and built. Great effort was concentrated on the characterization of the SKPM experiment. On the basis of an extended knowledge about the performance investigations concentrated on cross sections of microcrystalline silicon diode structures produced by hot-wire chemical vapor deposition (HW-CVD). A pin structure for the diodes was chosen due to the low diffusion lengths within this rather defective material. The evolution of the built-in electric drift field within the intrinsic absorber is a prerequisite for obtaining high short circuit current densities. SKPM was able to provide information about the potential and electric field distribution within the cross-sectioned diode structures. In conjunction with simulations statements about actual defect and dopant distributions could be derived. Several diode structures with different deposition and compensation conditions of the naturally n-type intrinsic layer were investigated. In order to explore the character of the defects deep level transient sp...

  10. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    Directory of Open Access Journals (Sweden)

    Goyal Prabal

    2016-01-01

    Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  11. Hot-wire chemical vapor deposition prepared aluminum doped p-type microcrystalline silicon carbide window layers for thin film silicon solar cells

    Science.gov (United States)

    Chen, Tao; Köhler, Florian; Heidt, Anna; Carius, Reinhard; Finger, Friedhelm

    2014-01-01

    Al-doped p-type microcrystalline silicon carbide (µc-SiC:H) thin films were deposited by hot-wire chemical vapor deposition at substrate temperatures below 400 °C. Monomethylsilane (MMS) highly diluted in hydrogen was used as the SiC source in favor of SiC deposition in a stoichiometric form. Aluminum (Al) introduced from trimethylaluminum (TMAl) was used as the p-type dopant. The material property of Al-doped p-type µc-SiC:H thin films deposited with different deposition pressure and filament temperature was investigated in this work. Such µc-SiC:H material is of mainly cubic (3C) SiC polytype. For certain conditions, like high deposition pressure and high filament temperature, additional hexagonal phase and/or stacking faults can be observed. P-type µc-SiC:H thin films with optical band gap E04 ranging from 2.0 to 2.8 eV and dark conductivity ranging from 10-5 to 0.1 S/cm can be prepared. Such transparent and conductive p-type µc-SiC:H thin films were applied in thin film silicon solar cells as the window layer, resulting in an improved quantum efficiency at wavelengths below 480 nm.

  12. Microcrystalline B-doped window layers prepared near amorphous to microcrystalline transition by HWCVD and its application in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, P. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany)]. E-mail: kumarp@rhrk.uni-kl.de; Kupich, M. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany); Grunsky, D. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany); Schroeder, B. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany)

    2006-04-20

    The electronic and structural properties of p-type microcrystalline silicon films prepared near the microcrystalline to amorphous ({mu}c-amorphous) transition by hot-wire chemical vapor deposition are studied. Silane is used as a source gas while H{sub 2} as diluent and trimethylboron (TMB) and boron trifluoride (BF{sub 3}) as doping gases. Increasing TMB concentration from 0.01% to 5% favors the amorphous growth whereas for BF{sub 3} the crystalline fraction remains constant. The dark conductivity ({sigma} {sub d}) of {mu}c-Si:H p-layers remains approximately constant for TMB 1-5% at constant crystalline fraction X {sub c}. This dark conductivity behavior is attributed to the decrease in doping efficiency with increasing TMB concentration. The best initial efficiency obtained for a 400 nm amorphous pin solar cell with optimized {mu}c-Si:H p-layer is 7.7% (V {sub oc} = 874 mV, J {sub sc} = 12.91 mA/cm{sup 2}, FF = 68%)

  13. Dynamics of hydrogen in hydrogenated amorphous silicon

    Indian Academy of Sciences (India)

    Ranber Singh; S Prakash

    2003-07-01

    The problem of hydrogen diffusion in hydrogenated amorphous silicon (a-Si:H) is studied semiclassically. It is found that the local hydrogen concentration fluctuations-induced extra potential wells, if intense enough, lead to the localized electronic states in a-Si:H. These localized states are metastable. The trapping of electrons and holes in these states leads to the electrical degradation of the material. These states also act as recombination centers for photo-generated carriers (electrons and holes) which in turn may excite a hydrogen atom from a nearby Si–H bond and breaks the weak (strained) Si–Si bond thereby apparently enhancing the hydrogen diffusion and increasing the light-induced dangling bonds.

  14. Modeling of triangular-shaped substrates for light trapping in microcrystalline silicon solar cells

    Science.gov (United States)

    Zi, Wei; Hu, Jian; Ren, Xiaodong; Ren, Xianpei; Wei, QingBo; Liu, Shengzhong (Frank)

    2017-01-01

    The influence of triangular grating used as a light trapping structure on the optical wave propagation within thin-film microcrystalline silicon (μc-Si:H) solar cells is investigated. A finite difference time domain (FDTD) approach is used to rigorously solve the Maxwell's equations in three dimensions. We apply two parameters of mean surface roughness (Sa) and slope (k) to define triangular structure and study their influence on the absorption of μc-Si:H. When Sa and k are set to 400 nm and 1, respectively, a largest enhancement of absorption is achieved. The optimum short circuit photocurrent (Jsc) of a 1-μm thick μc-Si:H solar cell made on such a textured substrate can reach 27.0 mA/cm2. The carrier generation rate in the μc-Si:H material is also rigorously analyzed. Finally, we identify some key optical losses in μc-Si:H solar cells and propose for further optimizing the device design.

  15. The microstructure evolution of hydrogenated microcrystalline germanium promoted by power gradient method

    Science.gov (United States)

    Wang, Xinyu; Ni, Jian; Li, Chang; Sun, Xiaoxiang; Li, Zhenglong; Cai, Hongkun; Li, Juan; Zhang, Jianjun

    2016-12-01

    This paper studies the microstructure evolution of hydrogenated microcrystalline germanium (μc-Ge:H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD). There is an amorphous incubation layer formed in the initial deposition stage of μc-Ge:H thin film. It is demonstrated that the thickness of incubation layer can be reduced by high hydrogen dilution and high discharge power method. However, at high hydrogen dilution, the deposition rate of μc-Ge:H appears a sharply decrease. Using a high discharge power can compensate the deposition rate decrease but lead to decrease of average grain size and appearance of micro-void in the μc-Ge:H thin film. In addition, by comparing two thickness groups of μc-Ge:H thin films deposited at different discharge powers, it is noticed that the evolution process relates to the formation of crystal nucleuses. Thus, a power gradient method is proposed to understand the mechanism of nucleation and crystal growth in the initial deposition process of μc-Ge:H films. Finally, by power gradient method, the incubation layer thickness of μc-Ge:H thin films has been decreased to less than 6 nm. Moreover, Raman scattering spectra shows a 38 nm μc-Ge:H film has a crystal fraction (XC) of 62.4%. Meanwhile, the mobility of TFT devices shows the improved electrical property of μc-Ge:H film deposited by power gradient method.

  16. A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4{text{-}H2{text{-}}He} PECVD

    Science.gov (United States)

    Losurdo, M.; Giangregorio, M.; Grimaldi, A.; Capezzuto, P.; Bruno, G.

    2004-06-01

    Fully microcrystalline silicon, μc-Si, thin films (polyimide substrates by plasma enhanced chemical vapor deposition (PECVD) using SiF{4}-H{2}-He. The effect of deposition temperature on the structure, i.e., crystallinity and density, of μc-Si films is investigated by spectroscopic ellipsometry in the 1.5 {-}5.5 eV energy range. Modeling of spectroscopic ellipsometry data is used for highlighting crystallinity of the substrate/film interface, i.e., the absence of any amorphous incubation layer. It is found that film crystallinity does not depend on film thickness, and it increases with the decrease of deposition temperature. The temperature dependence is explained on the basis of a like-Arrhenius kinetic analysis of the etching process by atomic fluorine and hydrogen of both μc-Si and a-Si phases.

  17. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  18. Electrochemical properties and applications of nanocrystalline, microcrystalline, and epitaxial cubic silicon carbide films.

    Science.gov (United States)

    Zhuang, Hao; Yang, Nianjun; Zhang, Lei; Fuchs, Regina; Jiang, Xin

    2015-05-27

    Microstructures of the materials (e.g., crystallinitiy, defects, and composition, etc.) determine their properties, which eventually lead to their diverse applications. In this contribution, the properties, especially the electrochemical properties, of cubic silicon carbide (3C-SiC) films have been engineered by controlling their microstructures. By manipulating the deposition conditions, nanocrystalline, microcrystalline and epitaxial (001) 3C-SiC films are obtained with varied properties. The epitaxial 3C-SiC film presents the lowest double-layer capacitance and the highest reversibility of redox probes, because of its perfect (001) orientation and high phase purity. The highest double-layer capacitance and the lowest reversibility of redox probes have been realized on the nanocrystalline 3C-SiC film. Those are ascribed to its high amount of grain boundaries, amorphous phases and large diversity in its crystal size. Based on their diverse properties, the electrochemical performances of 3C-SiC films are evaluated in two kinds of potential applications, namely an electrochemical capacitor using a nanocrystalline film and an electrochemical dopamine sensor using the epitaxial 3C-SiC film. The nanocrystalline 3C-SiC film shows not only a high double layer capacitance (43-70 μF/cm(2)) but also a long-term stability of its capacitance. The epitaxial 3C-SiC film shows a low detection limit toward dopamine, which is one to 2 orders of magnitude lower than its normal concentration in tissue. Therefore, 3C-SiC film is a novel but designable material for different emerging electrochemical applications such as energy storage, biomedical/chemical sensors, environmental pollutant detectors, and so on.

  19. Correlation Between the Raman Crystallinity of p-Type Micro-Crystalline Silicon Layer and Open Circuit Voltage of n-i-p Solar Cells.

    Science.gov (United States)

    Jung, Junhee; Kim, Sunbo; Park, Jinjoo; Shin, Chonghoon; Pham, Duy Phong; Kim, Jiwoong; Chung, Sungyoun; Lee, Youngseok; Yi, Junsin

    2015-10-01

    This article mainly discusses the difference between p-i-n and n-i-p type solar cells. Their structural difference has an effect on cell performance, such as open circuit voltage and fill factor. Although the deposition conditions are the same for both p-i-n and n-i-p cases, the substrate layers for depositing p-type microcrystalline silicon layers differ. In n-i-p cells, the substrate layer is p-type amorphous silicon oxide layer; whereas, in p-i-n cells, the substrate layer is ZnO:Al. The interfacial change leads to a 12% difference in the crystallinity of the p-type microcrystalline silicon layers. When the p-type microcrystalline silicon layer's crystallinity was not sufficient to activate an internal electric field, the open circuit voltage and fill factor decreased 0.075 V and 7.36%, respectively. We analyzed this problem by comparing the Raman spectra, electrical conductivity, activation energy and solar cell performance. By adjusting the thickness of the p-type microcrystalline silicon layer, we increased the open circuit voltage of the n-i-p cell from 0.835 to 0.91 V.

  20. Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD

    Institute of Scientific and Technical Information of China (English)

    HE Bao-hua; YANG Shi-e; CHEN Yong-sheng; LU Jing-xiao

    2011-01-01

    We present a numerical gas phase reaction model for hydrogenated microcrystaUine silicon (μc-Si:H) films fi'om SiH and H gas mixtures with plasma enhanced chemical vapor deposition (PECVD). Under the typical μc-Si:H deposition conditions, the concentrations of the species in the plasma are calculated and the effects of silane fraction (SF=[SiH]/[H+SiH]) are investigated. The results show that SiH is the key precursor for μc-Si:H films growth, and other neutral radicals, such as SiH, SiH and SiH, may play some roles in the film deposition. With the silane fraction increasing, the precursor concentration increases, but H atom concentration decreases rapidly, which results in the lower H/SiH ratio.

  1. Decoupling crystalline volume fraction and V{sub OC} in microcrystalline silicon pin solar cells by using a {mu}c-Si:F:H intrinsic layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Q.; Johnson, E.V.; Djeridane, Y.; Abramov, A.; Roca i Cabarrocas, P. [LPICM-CNRS, Ecole Polytechnique, Palaiseau (France)

    2008-08-15

    Microcrystalline silicon thin film pin solar cells with a highly crystallized intrinsic {mu}c-Si:F:H absorber were prepared by RF-plasma enhanced chemical vapour deposition using SiF{sub 4} as the gas precursor. The cells were produced with a vacuum break between the doped layer and intrinsic layer depositions, and the effect of different subsequent interface treatment processes was studied. The use of an intrinsic {mu}c-Si:H p/i buffer layer before the first air break increased the short circuit current density from 22.3 mA/cm{sup 2} to 24.7 mA/cm{sup 2}. However, the use of a hydrogen-plasma treatment after both air breaks without an interface buffer layer improved both the open circuit voltage and the fill factor. Although the material used for the absorber layer showed a very high crystalline fraction and thus an increased spectral response at long wavelengths, an open-circuit voltage (V{sub OC}) of 0.523 V was nevertheless observed. Such a value of V{sub OC} is higher than is typically obtained in devices that employ a highly crystallized absorber as reported in the literature (see abstract figure). Using a hydrogen-plasma treatment, a single junction {mu}c-Si:F:H pin solar cell with an efficiency of 8.3% was achieved. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Laser annealing study of PECVD deposited hydrogenated amorphous silicon carbon alloy films

    Science.gov (United States)

    Coscia, U.; Ambrosone, G.; Gesuele, F.; Grossi, V.; Parisi, V.; Schutzmann, S.; Basa, D. K.

    2007-12-01

    The influence of carbon content on the crystallization process has been investigated for the excimer laser annealed hydrogenated amorphous silicon carbon alloy films deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique, using silane methane gas mixture diluted in helium, as well as for the hydrogenated microcrystalline silicon carbon alloy films prepared by PECVD from silane methane gas mixture highly diluted in hydrogen, for comparison. The study demonstrates clearly that the increase in the carbon content prevents the crystallization process in the hydrogen diluted samples while the crystallization process is enhanced in the laser annealing of amorphous samples because of the increase in the absorbed laser energy density that occurs for the amorphous films with the higher carbon content. This, in turn, facilitates the crystallization for the laser annealed samples with higher carbon content, resulting in the formation of SiC crystallites along with Si crystallites.

  3. Role of oxygen and nitrogen in n-type microcrystalline silicon carbide grown by hot wire chemical vapor deposition

    Science.gov (United States)

    Pomaska, Manuel; Mock, Jan; Köhler, Florian; Zastrow, Uwe; Perani, Martina; Astakhov, Oleksandr; Cavalcoli, Daniela; Carius, Reinhard; Finger, Friedhelm; Ding, Kaining

    2016-12-01

    N-type microcrystalline silicon carbide (μc-SiC:H(n)) deposited by hot wire chemical vapor deposition provides advantageous opto-electronic properties for window layer material in silicon-based thin-film solar cells and silicon heterojunction solar cells. So far, it is known that the dark conductivity (σd) increases with the increase in the crystallinity of μc-SiC:H(n)films. However, due to the fact that no active doping source is used, the mechanism of electrical transport in these films is still under debate. It is suggested that unintentional doping by atmospheric oxygen (O) or nitrogen (N) contamination plays an important role in the electrical transport. To investigate the impact of O and N, we incorporated O and N in μc-SiC:H(n) films and compared the influence on the microstructural, electronic, and optical properties. We discovered that, in addition to increasing the crystallinity, it is also possible to increase the σd by several orders of magnitude by increasing the O-concentration or the N-concentration in the films. Combining a high concentration of O and N, along with a high crystallinity in the film, we optimized the σd to a maximum of 5 S/cm.

  4. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    National Research Council Canada - National Science Library

    Tsai, Chin-Yi; Tsai, Chin-Yao

    2014-01-01

      In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications...

  5. Arrays of ZnO nanocolumns for 3-dimensional very thin amorphous and microcrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Neykova, Neda, E-mail: neykova@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 16253 Prague 6 (Czech Republic); Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering Trojanova 13, 120 00 Prague 2 (Czech Republic); Hruska, Karel; Holovsky, Jakub; Remes, Zdenek; Vanecek, Milan [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 16253 Prague 6 (Czech Republic)

    2013-09-30

    We report on the hydrothermal growth of high quality arrays of single crystalline zinc oxide (ZnO) nanocolumns, oriented perpendicularly to the transparent conductive oxide substrate. In order to obtain precisely defined spacing and arrangement of ZnO nanocolumns over an area up to 0.5 cm{sup 2}, we used electron beam lithography. Vertically aligned ZnO (multicrystalline or single crystals) nanocolumns were grown in an aqueous solution of zinc nitrate hexahydrate and hexamethylenetetramine at 95 °C, with a growth rate 0.5 ÷ 1 μm/h. The morphology of the nanostructures was visualized by scanning electron microscopy. Such nanostructured ZnO films were used as a substrate for the recently developed 3-dimensional thin film silicon (amorphous, microcrystalline) solar cell, with a high efficiency potential. The photoelectrical and optical properties of the ZnO nanocolumns and the silicon absorber layers of these type nanostructured solar cells were investigated in details. - Highlights: • Vertically-oriented ZnO nanocolumns were grown by hydrothermal method. • The ZnO nanocolumns were grown over an area of 0.5 cm{sup 2}. • For precise arrangement of the ZnO nanocolumns electron beam lithography was used. • We report on 3-D design of nanostructured solar cell. • Optical thickness of nanostructured cell was three times higher compared to flat cell.

  6. Influence of alkaline hydrogen peroxide pre-hydrolysis on the isolation of microcrystalline cellulose from oil palm fronds.

    Science.gov (United States)

    Owolabi, Abdulwahab F; Haafiz, M K Mohamad; Hossain, Md Sohrab; Hussin, M Hazwan; Fazita, M R Nurul

    2017-02-01

    In the present study, microcrystalline cellulose (MCC) was isolated from oil palm fronds (OPF) using chemo-mechanical process. Wherein, alkaline hydrogen peroxide (AHP) was utilized to extract OPF fibre at different AHP concentrations. The OPF pulp fibre was then bleached with acidified sodium chlorite solution followed by the acid hydrolysis using hydrochloric acid. Several analytical methods were conducted to determine the influence of AHP concentration on thermal properties, morphological properties, microscopic and crystalline behaviour of isolated MCC. Results showed that the MCC extracted from OPF fibres had fibre diameters of 7.55-9.11nm. X-ray diffraction (XRD) analyses revealed that the obtained microcrystalline fibre had both celluloses I and cellulose II polymorphs structure, depending on the AHP concentrations. The Fourier transmission infrared (FTIR) analyses showed that the AHP pre-hydrolysis was successfully removed hemicelluloses and lignin from the OPF fibre. The crystallinity of the MCC was increased with the AHP concentrations. The degradation temperature of MCC was about 300°C. The finding of the present study showed that pre-treatment process potentially influenced the quality of the isolation of MCC from oil palm fronds. Copyright © 2016 Elsevier B.V. All rights reserved.

  7. Investigation of carrier density and mobility in microcrystalline silicon alloys using Hall effect and thermopower measurements; Untersuchung der Ladungstraegerkonzentration und -beweglichkeit in mikrokristallinen Siliziumlegierungen mit Hall-Effekt und Thermokraft

    Energy Technology Data Exchange (ETDEWEB)

    Sellmer, Christian

    2012-08-31

    The electronic properties of amorphous and microcrystalline silicon layers in thin-film solar cells significantly affect the efficiency of solar cells. An important property of the individual layer is the electronic transport, which is described by the variables conductivity, photoconductivity, mobility, and carrier concentration. In the past, individual characterization methods were typically used to determine the electronic properties. Using the combination of Hall effect, conductivity, and thermoelectric power measurements additional variables can be derived, such as the effective density of states at the valence and conduction band edge, making a more detailed description of the material possible. To systematically study the electronic properties - in particular carrier mobility and carrier concentration - various series of silicon films are prepared for this work including microcrystalline silicon layers of different doping and crystallinity and a series of silicon films where the Fermi level is moved by irradiation with high energy electrons on one and the same sample. The results show that the transition from amorphous to microcrystalline transport is relatively abrupt. If the electron transport takes place in only amorphous regions, it is marked by the sign anomaly of the Hall effect. If a continuous crystalline path exists, the electronic properties are dominated by the crystalline volume fraction. The results of the measurements of silicon layers are compared with those of microcrystalline silicon carbide samples. Silicon carbide is especially interesting for future applications in thin-film solar cells due to high transparency and high conductivity. It is shown that the effective density of states at the valence and conduction band edge as a function of temperature in p- and n-type microcrystalline silicon and silicon carbide samples largely coincide with those of crystalline silicon or silicon carbide. A square root shaped profile of the density of

  8. Laser Enhanced Hydrogen Passivation of Silicon Wafers

    Directory of Open Access Journals (Sweden)

    Lihui Song

    2015-01-01

    Full Text Available The application of lasers to enable advanced hydrogenation processes with charge state control is explored. Localised hydrogenation is realised through the use of lasers to achieve localised illumination and heating of the silicon material and hence spatially control the hydrogenation process. Improvements in minority carrier lifetime are confirmed in the laser hydrogenated regions using photoluminescence (PL imaging. However with inappropriate laser settings a localised reduction in minority carrier lifetime can result. It is observed that high illumination intensities and rapid cooling are beneficial for achieving improvements in minority carrier lifetimes through laser hydrogenation. The laser hydrogenation process is then applied to finished screen-printed solar cells fabricated on seeded-cast quasi monocrystalline silicon wafers. The passivation of dislocation clusters is observed with clear improvements in quantum efficiency, open circuit voltage, and short circuit current density, leading to an improvement in efficiency of 0.6% absolute.

  9. n +-Microcrystalline-Silicon Tunnel Layer in Tandem Si-Based Thin Film Solar Cells

    Science.gov (United States)

    Lee, Ching-Ting; Lee, Hsin-Ying; Chen, Kuan-Hao

    2016-10-01

    In this study, the p-SiC/ i-Si/ n-Si cell and the p-SiC/ i-SiGe/ n-Si cell deposited using plasma-enhanced chemical vapor deposition were cascaded for forming the tandem Si-based thin film solar cells to absorb the wide solar spectrum. To further improve the performances of the tandem Si-based thin film solar cells, a 5-nm-thick n +-microcrystalline-Si ( n +-μc-Si) tunnel layer deposited using the laser-assisted plasma-enhanced chemical vapor deposition was inserted between the p-SiC/ i-Si/ n-Si cell and the p-SiC/ i-SiGe/ n-Si cell. Since both the plasma and the CO2 laser were simultaneously utilized to efficiently decompose the reactant and doping gases, the carrier concentration and the carrier mobility of the n +-μc-Si tunnel layer were significantly improved. The ohmic contact formed between the p-SiC layer and the n +-μc-Si tunnel layer with low resistance was beneficial to the generated current transportation and the carrier recombination rate. Therefore, the conversion efficiency of the tandem solar cells was promoted from 8.57% and 8.82% to 9.91% compared to that without tunnel layer and with 5-nm-thick n +-amorphous-Si tunnel layer.

  10. Performance of amorphous and microcrystalline silicon pin solar cells under variable light intensity

    Energy Technology Data Exchange (ETDEWEB)

    Nath, M.; Chakraborty, S.; Chatterjee, P. [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032 (India); Kim, K.H.; Johnson, E.V.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, CNRS, 91128 Palaiseau (France)

    2010-04-15

    We have studied the solar cell behaviour under variable light intensity (VLI) of a standard a-Si:H pin solar cell with a wide band gap a-SiC:H emitter layer, and microcrystalline ({mu}c)-Si:H solar cells of different degrees of crystallinity, using experiments in conjunction with detailed electrical-optical modelling. Both experiments and modelling reveal that whereas the fill factor (FF) of the a-Si:H pin cell decreases with increasing light intensity, starting from a low applied light bias, that of the {mu}c-Si:H cells increases with light intensity over a major part of this range. This fact enables one to attain the maximum of the open-circuit voltage - fill factor product (V{sub oc} x FF) at 1 to 2 suns intensity for the latter case; however this is not achieved for the a-Si:H cell. Using modelling we try to understand this difference in behaviour of the FF under VLI for the two types of cells. We also predict under what conditions it would be possible to shift the (V{sub oc} x FF){sub max} for the a-Si:H cell towards one sun intensity. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Identification of hydroxyl protons, determination of their exchange dynamics, and characterization of hydrogen bonding in a microcrystallin protein.

    Science.gov (United States)

    Agarwal, Vipin; Linser, Rasmus; Fink, Uwe; Faelber, Katja; Reif, Bernd

    2010-03-10

    Heteronuclear correlation experiments employing perdeuterated proteins enable the observation of all hydroxyl protons in a microcrystalline protein by MAS solid-state NMR. Dipolar-based sequences allow magnetization transfers that are >50 times faster compared to scalar-coupling-based sequences, which significantly facilitates their assignment. Hydroxyl exchange rates were measured using EXSY-type experiments. We find a biexponential decay behavior for those hydroxyl groups that are involved in side chain-side chain C-O-H...O horizontal lineC hydrogen bonds. The quantification of the distances between the hydroxyl proton and the carbon atoms in the hydrogen-bonding donor as well as acceptor group is achieved via a REDOR experiment. In combination with X-ray data and isotropic proton chemical shifts, availability of (1)H,(13)C distance information can aid in the quantitative description of the geometry of these hydrogen bonds. Similarly, correlations between backbone amide proton and carbonyl atoms are observed, which will be useful in the analysis of the registry of beta-strand arrangement in amyloid fibrils.

  12. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  13. Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO2 with High Haze Factors

    Science.gov (United States)

    Zhao, Ying; Miyajima, Shinsuke; Ide, Yoshinori; Yamada, Akira; Konagai, Makoto

    2002-11-01

    Microcrystalline silicon (μc-Si) films and solar cells were prepared by mercury-sensitized photochemical vapor deposition (photo-CVD). The changes in the structural properties of a series of μc-Si films grown under various H2 dilution and deposition pressure conditions were discussed. The results indicated that the properties of μc-Si films depend strongly on the atomic hydrogen. The microstructures of μc-Si films on textured SnO2 with different haze factors (from 13% to 65%) were observed with a scanning electron microscope and a transmission electron microscope. The observations revealed that the μc-Si layers grew from the initial stage of deposition with columnar grains and that they were conformal to the surface of textured SnO2. The grain boundary density of μc-Si film on SnO2 with higher haze factors was lower than that on SnO2 with lower haze factors. The effect of textured SnO2 with different haze ratios on p-i-n μc-Si cell characteristics was discussed and it was found that the higher haze factors showed a higher degree of light trapping in our μc-Si cells. We deposited μc-Si cells with an intrinsic μc-Si layer thickness of 430 nm on a textured SnO2 sample with a haze factor of 42% and achieved a conversion efficiency of 6.55%.

  14. Properties of hydrogen induced voids in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Weber, J; Fischer, T; Hieckmann, E; Hiller, M; Lavrov, E V [Institute for Applied Physics/Semiconductor Physics, TU Dresden, 01062 Dresden (Germany)

    2005-06-08

    After heat treatment, silicon samples implanted with high doses of hydrogen exhibit blistering and defoliation of thin silicon layers. The process is used commercially in the fabrication of thin silicon-on-insulator layers (Smart Cut(registered)). In the present study we investigate the behaviour of hydrogen after different processing steps, which lead to thin Si layers bonded to glass substrates. A set of hydrogen implanted samples is studied by means of low temperature photoluminescence, Raman spectroscopy, x-ray diffraction and optical microscopy (visible and infrared). The formation of Si-H bonds is detected after implantation together with a build-up of internal strain. After annealing, the relaxation of the implanted layers is found to be connected with the formation of hydrogen saturated vacancies and the formation of H{sub 2} molecules filling up larger voids. A comparison is made with hydrogen plasma treated samples, where well defined platelets on {l_brace}111{r_brace} planes are found to trap hydrogen molecules. No direct evidence of the role of {l_brace}111{r_brace} and {l_brace}100{r_brace} platelets in the blistering process is found in the implanted layers from our study. We determine considerable compressive stresses in the bonded Si layers on glass substrates. The photoluminescence is strongly enhanced in these bonded layers but red-shifted due to a strain reduced band gap.

  15. Bioaugmented hydrogen production from microcrystalline cellulose using co-culture - Clostridium acetobutylicumX{sub 9} and Ethanoigenens harbinenseB{sub 49}

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Aijie; Ren, Nanqi; Shi, Yinguen [School of Municipal and Environmental Engineering, Harbin Institute of Technology, P.O. Box 2614, 202 Haihe Road, Harbin 150090 (China); Lee, Duu-Jong [School of Municipal and Environmental Engineering, Harbin Institute of Technology, P.O. Box 2614, 202 Haihe Road, Harbin 150090 (China); Department of Chemical Engineering, National Taiwan University, Taipei (China)

    2008-01-15

    Dark fermentation of microcrystalline cellulose to produce biohydrogen using mono-culture or co-culture of isolated strains was studied. A strain (X{sub 9}) with high hydrogen yield from microcrystalline cellulose was isolated and identified to be closely affiliated with Clostridium acetobutylicum, ATCC 824. At 37{sup o}C and pH 5.0, the mono-culture of X{sub 9} yields hydrogen with a 5-h time lag and end liquid products primarily of acetate and butyrate. The co-culture of X{sub 9} with another strain, Ethanoigenens harbinenseB{sub 49}, which can produce hydrogen efficiently from monosaccharides but directly from microcrystalline cellulose, produced more efficiently the biohydrogen via ethanol-type fermentation metabolism compared with mono-culture X{sub 9} test. Bioaugmentation with X{sub 9}+B{sub 49} improved cellulose hydrolysis and subsequent hydrogen production rates as compared with that of mono-culture bioaugmentation with X{sub 9}. (author)

  16. Ground state structures and properties of small hydrogenated silicon clusters

    Indian Academy of Sciences (India)

    R Prasad

    2003-01-01

    We present results for ground state structures and properties of small hydrogenated silicon clusters using the Car–Parrinello molecular dynamics with simulated annealing. We discuss the nature of bonding of hydrogen in these clusters. We find that hydrogen can form a bridge like Si–H–Si bond connecting two silicon atoms. We find that in the case of a compact and closed silicon cluster hydrogen bonds to the silicon cluster from outside. To understand the structural evolutions and properties of silicon cluster due to hydrogenation, we have studied the cohesive energy and first excited electronic level gap of clusters as a function of hydrogenation. We find that first excited electronic level gap of Si and SiH fluctuates as function of size and this may provide a first principle basis for the short-range potential fluctuations in hydrogenated amorphous silicon. The stability of hydrogenated silicon clusters is also discussed.

  17. Photo-induced density-of-states variation measured by DLTS method in intrinsic micro-crystalline silicon (i-μc-Si:H) films

    Science.gov (United States)

    Wang, J.; Sun, Q. S.; Liu, H. N.; He, Y. L.

    1987-06-01

    This paper advances a measurement and two calculations of a high-frequency DLTS method for the density-of-states g(E) of intrinsic micro-crystalline and amorphous silicon film. The method surmounts the difficulties of DLTS measurement of i-a-Si:H or i-μc-Si:H samples and applies the common high-frequency DLTS to it, while the temperature of measurement is extended below 77K. Following the method, we successfully observed the obvious increase of density-of-states produced by illumination.

  18. Radial n-i-p structure SiNW-based microcrystalline silicon thin-film solar cells on flexible stainless steel.

    Science.gov (United States)

    Xie, Xiaobing; Zeng, Xiangbo; Yang, Ping; Li, Hao; Li, Jingyan; Zhang, Xiaodong; Wang, Qiming

    2012-11-12

    Radial n-i-p structure silicon nanowire (SiNW)-based microcrystalline silicon thin-film solar cells on stainless steel foil was fabricated by plasma-enhanced chemical vapor deposition. The SiNW solar cell displays very low optical reflectance (approximately 15% on average) over a broad range of wavelengths (400 to 1,100 nm). The initial SiNW-based microcrystalline (μc-Si:H) thin-film solar cell has an open-circuit voltage of 0.37 V, short-circuit current density of 13.36 mA/cm2, fill factor of 0.3, and conversion efficiency of 1.48%. After acid treatment, the performance of the modified SiNW-based μc-Si:H thin-film solar cell has been improved remarkably with an open-circuit voltage of 0.48 V, short-circuit current density of 13.42 mA/cm2, fill factor of 0.35, and conversion efficiency of 2.25%. The external quantum efficiency measurements show that the external quantum efficiency response of SiNW solar cells is improved greatly in the wavelength range of 630 to 900 nm compared to the corresponding planar film solar cells.

  19. 本征微晶硅薄膜的结构演变及其对太阳电池光伏性能的影响%The Microstructure Evolution of Intrinsic Microcrystalline Silicon Films and Its Influence on the Photovoltaic Performance of Thin-Film Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    袁育杰; 侯国付; 张建军; 薛俊明; 赵颖; 耿新华

    2008-01-01

    Hydrogenated microcrystalline silicon(μc-Si:H)intrinsic films and solar ceils are prepared by plasma enhanced chemical vapor deposition(PECVD)with various hydrogen dilution ratios.The influence of hydrogen dilution ratios on electrical characteristics is investigated to study the phase transition from amorphous to microcrystalline silicon.During the deposition process,the optical emission spectroscopy(OES)from plasma is recorded and compared with the Raman spectra of the films,by which the microstructure evolution of different H2 dilution ratios and its influence on the performance of μc-Si:H n-i-P solar ceils is investigated.%采用高压射频等离子体增强化学气相沉积(RF-PECVD)方法制备本征硅薄膜和n-i-P结构太阳电池,研究了氢稀释率对本征硅薄膜的电学特性和结构特性的影响.采用光发射谱(OES)和喇曼(Raman)散射光谱研究了处于过渡区的本征硅薄膜的纵向结构演变过程.结果表明:光发射谱和喇曼散射光谱可以作为研究硅薄膜的纵向结构演变有效手段.随着氢稀释率的增加,硅薄膜从非晶相向微晶相过渡时,其纵向结构的改变会严重影响硅薄膜太阳电池的光伏性能.

  20. Tunable nonlinear absorption of hydrogenated nanocrystalline silicon.

    Science.gov (United States)

    Ma, Y J; Oh, J I; Zheng, D Q; Su, W A; Shen, W Z

    2011-09-01

    Nonlinear absorption (NLA) of hydrogenated nanocrystalline silicon (nc-Si:H) has been investigated through the open aperture Z-scan method for the photon energy of the incident irradiance slightly less than the bandgap of the sample. NLA responses have been observed to be highly sensitive to the wavelength and intensity of the incident irradiance as well as to the bandgap of the sample, indicating greatly tunable NLA of nc-Si:H. The band tail of nc-Si:H appears to play a crucial role in such NLA responses.

  1. Studies of photodegradation in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Clare, B.W. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Cornish, J.C.L. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Hefter, G.T. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Jennings, P.J. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Lund, C.P. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Santjojo, D.J. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Talukder, M.O.G. [Dept. of Applied Physics and Electronics, Rajshahi Univ. (Bangladesh)

    1996-11-15

    IR absorption spectroscopy was used to study light-induced structural changes in hydrogenated amorphous silicon (a-Si:H) films. Our results suggest that illumination causes migration of H atoms from the interior of the film towards the illuminated surface. As a consequence, a transformation occurs in the bulk of the material leading to the formation of dangling bonds in the i-layer which could act as traps for minority carriers in solar cells. Using these results, we have formulated a model for the photodegradation of a-Si:H alloys. (orig.)

  2. Hydrogen effusion from tritiated amorphous silicon

    Science.gov (United States)

    Kherani, N. P.; Liu, B.; Virk, K.; Kosteski, T.; Gaspari, F.; Shmayda, W. T.; Zukotynski, S.; Chen, K. P.

    2008-01-01

    Results for the effusion and outgassing of tritium from tritiated hydrogenated amorphous silicon (a-Si:H:T) films are presented. The samples were grown by dc-saddle field glow discharge at various substrate temperatures between 150 and 300°C. The tracer property of radioactive tritium is used to detect tritium release. Tritium effusion measurements are performed in a nonvacuum ion chamber and are found to yield similar results as reported for standard high vacuum technique. The results suggest for decreasing substrate temperature the growth of material with an increasing concentration of voids. These data are corroborated by analysis of infrared absorption data in terms of microstructure parameters. For material of low substrate temperature (and high void concentration) tritium outgassing in air at room temperature was studied, and it was found that after 600h about 0.2% of the total hydrogen (hydrogen+tritium) content is released. Two rate limiting processes are identified. The first process, fast tritium outgassing with a time constant of 15h, seems to be related to surface desorption of tritiated water (HTO) with a free energy of desorption of 1.04eV. The second process, slow tritium outgassing with a time constant of 200-300h, appears to be limited by oxygen diffusivity in a growing oxide layer. This material of lowest H stability would lose half of the hydrogen after 60years.

  3. Device-quality Intrinsic Microcrystalline Silicon Prepared by 13.56MHz PECVD at High Pressure%高压13.56MHz PECVD法沉积器件质量级本征微晶硅材料

    Institute of Scientific and Technical Information of China (English)

    侯国付; 李以钢; 郭群超; 王岩; 薛俊明; 任慧志; 宋建; 张晓丹; 赵颖; 耿新华

    2005-01-01

    In this paper intrinsic hydrogenated microcrystalline silicon (μc-Si: H) thin films and solar cells prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) method at high pressure are reported. Our experimental results demonstrated that either increasing plasma power or decreasing silane concentration always can lead to structural transition from amorphous silicon to microcrystalline silicon, and then the electrical properties changed along with the micro-structural evolution. By optimizing process parameters and using gas purifier, the oxygen concentration was prohibited effectively and then device-qualityμc-Si: H thin films have been got at a relative high deposition rate. Their applications as absorber layers in single-junctionμc-Si: H solar cells with 1.5μm i-layer yielded conversion efficiency of 5.22% without ZnO back reflector and without optimizing p-layer and p/i interface.%本文国内首次报道了采用高压RF-PECVD技术沉积本征微晶硅材料的结果.实验表明,增大等离子体激发功率和减小硅烷浓度都能够使薄膜材料由非晶硅逐渐向微晶硅转变,而结构上的改变使得电学特性也随之改变.通过工艺参数的优化和纯化器的使用,有效地控制了氧的掺杂,在较高的生长速度下得到了器件质量级的本征微晶硅材料.将实验得到的微晶硅作为太阳电池光吸收层,在没有ZnO背电极和没有优化窗口层材料以及p/i界面时,电池的效率达到5.22%,这进一步表明本征微晶硅材料的良好性能.

  4. Electron energy-loss spectroscopy study of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Burnham, N.A.; Fisher, R.F.; Asher, S.E.; Kazmerski, L.L.

    1987-07-01

    Electron energy-loss spectroscopy is used to study hydrogenated amorphous silicon (a-Si:H). Core-level and plasma excitations were examined as a function of hydrogen content. This technique and its interpretation reveals a consistent picture of the electron excitations within this important material. The a-Si:H thin films were fabricated by rf sputtering. Their hydrogen concentrations ranged from 0% to 15%. Hydrogen content was determined by infrared spectroscopy and secondary ion mass spectroscopy. X-ray photoelectron spectroscopy and inspection of the silicon Auger-KLL peak confirmed the silicon core levels.

  5. Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride

    Science.gov (United States)

    Serpenguzel, Ali; Aydinli, Atilla; Bek, Alpan

    1998-07-01

    Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride--air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.

  6. IR characterization of hydrogen in crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stavola, M., E-mail: michael.stavola@Lehigh.ed [Department of Physics, Lehigh University, Bethlehem, PA 18015 (United States); Kleekajai, S.; Wen, L.; Peng, C. [Department of Physics, Lehigh University, Bethlehem, PA 18015 (United States); Yelundur, V.; Rohatgi, A. [School of Electrical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Carnel, L. [REC Wafer AS, NO-3908 Porsgrunn (Norway); Kalejs, J. [American Capital Energy, N. Chelmsford, MA 01863 (United States)

    2009-12-15

    Hydrogen is commonly introduced into silicon solar cells to reduce the deleterious effects of defects and to increase cell efficiency. A process that is widely used by industry to introduce hydrogen is by the post-deposition annealing of a hydrogen-rich SiN{sub x} layer that is used as an anti-reflection coating. A number of questions about this hydrogen introduction process and hydrogen's subsequent interactions with defects have proved difficult to address because of the low concentration of hydrogen that is introduced into the Si bulk. We have used the fundamental knowledge of hydrogenated defects that has been revealed by recent investigations of impurity-H complexes to develop strategies by which hydrogen in silicon can be detected by IR spectroscopy with high sensitivity. The introduction of hydrogen into Si by the post-deposition annealing of a SiN{sub x} coating has been investigated.

  7. STUDY ON MICROCRYSTALLINE SILICON THIN FILM SOLAR CELLS ON FLEXIBLE SUBSTRATE%柔性衬底微晶硅薄膜太阳电池研究

    Institute of Scientific and Technical Information of China (English)

    周丽华; 刘成; 叶晓军; 钱子勍; 陈鸣波

    2011-01-01

    The intrinsic microcrystalline silicon thin film layers (I-layer) and nip single microcrystalline silicon solar cells were prepared by plasma enhanced chemical vapor deposition (PECVD). Then the relationship among deposition parameters, the characteristics of I-layers and the performanceof solar cells was studied. It demonstrated that crystalline fraction of I-layers decreased gradually with the increasing of silicon concentration. And the performance of solar cells deteriorated while the deposition temperature rose over 200℃. With the increasing of discharge power, the crystalline volume fraction maintained the same, but the open circuit voltage of the solar cell and its spectrum response at short wavelength increased gradually. Base on the optimized deposition parameters, single junction solar cells with conversion efficiency of 6.48% (AM0,25℃ ) were fabricated. Finally, tandem solar cells on stainless steel flexible substrate with conversion efficiency of 9. 28% ( AM0,25℃) were obtained.%采用等离子增强化学气相沉积(PECVD)技术制备了系列本征微晶硅薄膜材料和nip单结微晶硅太阳电池,研究了硅烷浓度、衬底温度和辉光功率等沉积参数与薄膜材料性能、薄膜电池性能三者之间的关系.拉曼光谱和器件测试结果表明:随硅烷浓度的增加,本征层晶化率逐渐减小,直至转变为非晶硅;沉积温度高于200℃时,电池性能严重恶化;随等离子辉光功率增加,材料晶化率保持不变,而电池开路电压逐渐增大,短波光谱响应逐渐增强.在此基础上,优化了单结微晶硅电池沉积参数,得到效率为6.48% (AM0,25℃)的单结微晶硅薄膜太阳电池;并将其应用到非晶硅/微晶硅叠层电池中,在不锈钢柔性衬底上得到效率为9.28%( AM0,25℃)的叠层电池.

  8. Diffusion of Hydrogen in Proton Implanted Silicon: Dependence on the Hydrogen Concentration

    CERN Document Server

    Faccinelli, Martin; Jelinek, Moriz; Wuebben, Thomas; Laven, Johannes G; Schulze, Hans-Joachim; Hadley, Peter

    2016-01-01

    The reported diffusion constants for hydrogen in silicon vary over six orders of magnitude. This spread in measured values is caused by the different concentrations of defects in the silicon that has been studied. Hydrogen diffusion is slowed down as it interacts with impurities. By changing the material properties such as the crystallinity, doping type and impurity concentrations, the diffusivity of hydrogen can be changed by several orders of magnitude. In this study the influence of the hydrogen concentration on the temperature dependence of the diffusion in high energy proton implanted silicon is investigated. We show that the Arrhenius parameters, which describe this temperature dependence decrease with increasing hydrogen concentration. We propose a model where the relevant defects that mediate hydrogen diffusion become saturated with hydrogen at high concentrations. When the defects that provide hydrogen with the lowest energy positions in the lattice are saturated, hydrogen resides at energetically le...

  9. Light Scattering and Current Enhancement for Microcrystalline Silicon Thin-Film Solar Cells on Aluminium-Induced Texture Glass Superstrates with Double Texture

    Directory of Open Access Journals (Sweden)

    Yunfeng Yin

    2015-01-01

    Full Text Available Microcrystalline silicon (μc-Si:H thin-film solar cells are processed on glass superstrates having both micro- and nanoscale surface textures. The microscale texture is realised at the glass surface, using the aluminium-induced texturing (AIT method, which is an industrially feasible process enabling a wide range of surface feature sizes (i.e., 700 nm–3 μm of the textured glass. The nanoscale texture is made by conventional acid etching of the sputter-deposited transparent conductive oxide (TCO. The influence of the resulting “double texture” on the optical scattering is investigated by means of atomic force microscopy (AFM (studying the surface topology, haze measurements (studying scattering into air, and short-circuit current enhancement measurements (studying scattering into silicon. A predicted enhanced optical scattering efficiency is experimentally proven by a short-circuit current enhancement ΔIsc of up to 1.6 mA/cm2 (7.7% relative increase compared to solar cells fabricated on a standard superstrate, that is, planar glass covered with nanotextured TCO. Enhancing the autocorrelation length (or feature size of the AIT superstrates might have the large potential to improve the μc-Si:H thin-film solar cell efficiency, by reducing the shunting probability of the device while maintaining a high optical scattering performance.

  10. Hydrogen isotopic substitution experiments in nanostructured porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, W.D. [Facultad de Ciencias Exactas y Naturales y Agrimensura - (UNNE), Avenida Libertad 5500, 3400 Corrientes (Argentina); Koropecki, R.R. [INTEC (CONICET-UNL), Gueemes 3450, 3000 Santa Fe (Argentina)], E-mail: rkoro@intec.ceride.gov.ar; Arce, R.D. [INTEC (CONICET-UNL), Gueemes 3450, 3000 Santa Fe (Argentina); Busso, A. [Facultad de Ciencias Exactas y Naturales y Agrimensura - (UNNE), Avenida Libertad 5500, 3400 Corrientes (Argentina)

    2008-04-30

    Nanostructured porous silicon is usually prepared by electrochemical anodization of monocrystalline silicon using a fluorine-rich electrolyte. As a result of this process, the silicon atoms conserve their original crystalline location, and many of the dangling bonds appearing on the surface of the nanostructure are saturated by hydrogen coming from the electrolyte. This work presents an IR study of the effects produced by partial substitution of water in the electrolytic solution by deuterium oxide. The isotopic effects on the IR spectra are analyzed for the as-prepared samples and for the samples subjected to partial thermal effusion of hydrogen and deuterium. We demonstrate that, although deuterium is chemically indistinguishable from hydrogen, it presents a singular behaviour when used in porous silicon preparation. We found that deuterium preferentially bonds forming Si-DH groups. A possible explanation of the phenomenon is presented, based on the different diffusivities of hydrogen and deuterium.

  11. Compaction mechanism and tablet strength of unlubricated and lubricated (silicified) microcrystalline cellulose

    NARCIS (Netherlands)

    van Veen, B; Bolhuis, G K; Wu, Y S; Zuurman, K; Frijlink, H W

    This paper describes the differences in compaction properties between microcrystalline cellulose (MCC) and microcrystalline cellulose co-processed with colloidal silicon dioxide (SMCC). The different compaction parameters are not only compared for the pure materials, but also for the lubricated

  12. Atomistic models of hydrogenated amorphous silicon nitride from first principles

    NARCIS (Netherlands)

    Jarolimek, K.; Groot, R.A. de; Wijs, G.A. de; Zeman, M.

    2010-01-01

    We present a theoretical study of hydrogenated amorphous silicon nitride (a-SiNx:H), with equal concentrations of Si and N atoms (x=1), for two considerably different densities (2.0 and 3.0 g/cm3). Densities and hydrogen concentration were chosen according to experimental data. Using

  13. Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD

    Science.gov (United States)

    Hou, Guo-Fu; Geng, Xin-Hua; Zhang, Xiao-Dan; Sun, Jian; Zhang, Jian-Jun; Zhao, Ying

    2011-07-01

    A series of hydrogenated silicon thin films with varying silane concentrations have been deposited by using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The deposition process and the silicon thin films are studied by using optical emission spectroscopy (OES) and Fourier transfer infrared (FTIR) spectroscopy, respectively. The results show that when the silane concentration changes from 10% to 1%, the peak frequency of the Si-H stretching mode shifts from 2000 cm-1 to 2100 cm-1, while the peak frequency of the Si—H wagging—rocking mode shifts from 650 cm-1 to 620 cm-1. At the same time the SiH/Hα intensity ratio in the plasma decreases gradually. The evolution of the infrared spectra and the optical emission spectra demonstrates a morphological phase transition from amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). The structural evolution and the μc-Si:H formation have been analyzed based on the variation of Hα and SiH intensities in the plasma. The role of oxygen impurity during the plasma process and in the silicon films is also discussed in this study.

  14. Light trapping and optical losses in microcrystalline silicon pin solar cells deposited on surface-textured glass/ZnO substrates

    Energy Technology Data Exchange (ETDEWEB)

    Springer, J. [Forschungszentrum Julich GmbH, Julich (Germany). Institute of Photovoltaics; Academy of Sciences of the Czech Republic, Prague (Czech Republic). Institute of Physics; Rech, B.; Reetz, W.; Muller, J. [Forschungszentrum Julich GmbH, Julich (Germany). Institute of Photovoltaics; Vanecek, M. [Academy of Sciences of the Czech Republic, Prague (Czech Republic). Institute of Physics

    2005-01-01

    Influence of front TCO thickness, surface texture and different back reflectors on short-circuit current density and fill factor of thin film silicon solar cells were investigated. For the front TCO studies, we used ZnO layers of different thickness and applied wet chemical etching in diluted HCl. This approach allowed us to adjust ZnO texture and thickness almost independently. Additionally, we used optical modeling to calculate optical absorption losses in every layer. Results show that texture and thickness reduction of front ZnO increase quantum efficiency over the whole spectral range. The major gain is in the red/IR region. However, the higher sheet resistance of the thin ZnO causes a reduction in fill factor. In the back reflector studies, we compared four different back reflectors: ZnO/Ag, Ag, ZnO/Al and Al. ZnO/Ag yielded the best, Al the worst light trapping properties. Furthermore, the Ag back contact turned out to be superior to ZnO/Al for microcrystalline cells. Finally, the smooth ZnO/Ag back contact showed a higher reflectivity than the rough one. We prepared pin cells with rough and smooth ZnO/Ag interface, leaving the roughness of all other interfaces unchanged. (author)

  15. Hydrogen passivation of multi-crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    胡志华; 廖显伯; 刘祖明; 夏朝凤; 陈庭金

    2003-01-01

    The effects of hydrogen passivation on multi-crystalline silicon (mc-Si) solar cells are reported in this paper.Hydrogen plasma was generated by means of ac glow discharge in a hydrogen atmosphere. Hydrogen passivation was carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrated that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6%. A calculation modelling has been performed to interpret the experimental results using the model for analysis of microelectronic and photonic structures developed at Pennsylvania State University.

  16. Porous silicon-based direct hydrogen sulphide fuel cells.

    Science.gov (United States)

    Dzhafarov, T D; Yuksel, S Aydin

    2011-10-01

    In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

  17. High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; van Sark, W.G.J.H.M.; Rath, J.K.

    2011-01-01

    We investigate the influence of thermal annealing on the passivation quality of crystalline silicon (c-Si) surfaces by intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) films. For temperatures up to 255 C, we find an increase in surface passivation quality, corresponding to a decreased da

  18. Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    King, Sean W., E-mail: sean.king@intel.com; Tanaka, Satoru; Davis, Robert F. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nemanich, Robert J. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-09-15

    Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H{sub 2}) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700–1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H{sub 2} desorption at both lower temperatures (200–550 °C) as well as higher temperatures (>700 °C). The low temperature H{sub 2} desorption was deconvoluted into multiple desorption states that, based on similarities to H{sub 2} desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H{sub 2} desorption was similarly attributed to H{sub 2} evolved from surface O-H groups at ∼750 °C as well as the liberation of H{sub 2} during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C–O and

  19. In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

    OpenAIRE

    Duy Phong Pham; Huu Truong Nguyen; Bach Thang Phan; Thi My Dung Cao; Van Dung Hoang; Vinh Ai Dao; Junsin Yi; Cao Vinh Tran

    2014-01-01

    Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codop...

  20. Hydrogen adsorption in metal-decorated silicon carbide nanotubes

    Science.gov (United States)

    Singh, Ram Sevak; Solanki, Ankit

    2016-09-01

    Hydrogen storage for fuel cell is an active area of research and appropriate materials with excellent hydrogen adsorption properties are highly demanded. Nanotubes, having high surface to volume ratio, are promising storage materials for hydrogen. Recently, silicon carbide nanotubes have been predicted as potential materials for future hydrogen storage application, and studies in this area are ongoing. Here, we report a systematic study on hydrogen adsorption properties in metal (Pt, Ni and Al) decorated silicon carbide nanotubes (SiCNTs) using first principles calculations based on density functional theory. The hydrogen adsorption properties are investigated by calculations of adsorption energy, electronic band structure, density of states (DOS) and Mulliken charge population analysis. Our findings show that hydrogen adsorptions on Pt, Ni and Al-decorated SiCNTs undergo spontaneous exothermic reactions with significant modulation of electronic structure of SiCNTs in all cases. Importantly, according to the Mulliken charge population analysis, dipole-dipole interaction causes chemisorptions of hydrogen in Pt, Ni and Al decorated SiCNTs with formation of chemical bonds. The study is a platform for the development of metal decorated SiCNTs for hydrogen adsorption or hydrogen storage application.

  1. Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Bolen, M. L.; Grover, S.; Teplin, C. W.; Bobela, D.; Branz, H. M.; Stradins, P.

    2012-06-01

    Post-deposition hydrogenation by remote plasma significantly improves performance of heteroepitaxial silicon solar cells. Heteroepitaxial deposition of thin crystal silicon on sapphire for photovoltaics (PV) is an excellent model system for the study and improvement of deposition on inexpensive Al2O3-coated (100) biaxially-textured metal foils. Without hydrogenation, PV conversion efficiencies are less than 1% on our model system. Performance is limited by carrier recombination at electrically active dislocations that result from lattice mismatch, and other defects. We find that low-temperature hydrogenation at 350 degrees C is more effective than hydrogenation at 610 degrees C. In this work, we use measurements such as spectral quantum efficiency, secondary ion mass spectrometry (SIMS), and vibrational Si-H spectroscopies to understand the effects of hydrogenation on the materials and devices. Quantum efficiency increases most at red and green wavelengths, indicating hydrogenation is affecting the bulk more than the surface of the cells. SIMS shows there are 100X more hydrogen atoms in our cells than dangling bonds along dislocations. Yet, Raman spectroscopy indicates that only low temperature hydrogenation creates Si-H bonds; trapped hydrogen does not stably passivate dangling-bond recombination sites at high temperatures.

  2. DLTS analysis of nickel-hydrogen complex defects in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Shiraishi, M. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)]|[Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240 (Japan); Sachse, J.-U.; Weber, J. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Lemke, H. [TU Berlin, Institut fuer Werkstoffe der Elektronik, Jebensstrasse 1, D-10623, Berlin (Germany)

    1999-02-12

    The results of a deep level transient spectroscopy (DLTS) study of nickel-hydrogen complexes in n- and p-type silicon are presented. Hydrogen is incorporated by wet-chemical etching. After etching, eleven electrically active Ni-H related levels are observed. Heat treatment enables us to investigate the thermal stability of Ni-H complexes. Possible structures of the Ni-H defects are proposed. (orig.) 10 refs.

  3. High Mobility Microcrystalline Silicon Thin-Film Transistors%基于高迁移率微晶硅的薄膜晶体管

    Institute of Scientific and Technical Information of China (English)

    CHAN Kah-Yoong; Eerle Bunte; Helmut Stiebig; Dietmar Knipp

    2008-01-01

    Microcrystalline silicon (μc-Si: H) has recently been proven to be a promising material for thin- film transistors (TFTs). We present μc-Si.H TFTs fabricated by plasma-enhanced chemical vapor deposi-tion at temperatures below 200℃ in a condition similar to the fabrication of amorphous silicon TFTs. The μc-Si. H TFTs exhibit device mobilities exceeding 30 cm2/Vs and threshold voltages in the range of 2.5 V.Such high mobilities are observed for long channel devices (50~200 μm). For short channel device (2μm), the mobility reduces to 7 cm2/Vs. Furthermore the threshold voltage of the TFTs decreases with de-creasing channel length. A simple model is developed, which explains the observed reduction of the device mobility and threshold voltage with decreasing channel length by the influence of drain and source contact resistance.%近年来,微晶硅(μc-Si:H)被认为是一种制作 TFT 的有前景的材料.采用PECVD法,在低于200℃时制作了微晶硅TFTs,其制作条件类似于非晶态 TFTs.微晶硅 TFTs 器件的迁移率超过了 30 cm2/Vs,而阈值电压是 2.5 V.在长沟道器件(50~200 μm)中观测到了这种高迁移率.但对于短沟道器件(2 μm),迁移率就降低到了7 cm2/Vs.此外,该 TFTs 的阈值电压随着沟道长度的减少而增大.文章采用了一种简单模型解释了迁移率、阈值电压随着沟道长度的缩短而分别减少、增加的原因在于源漏接触电阻的影响.

  4. Supercontinuum generation in hydrogenated amorphous silicon waveguides at telecommunication wavelengths.

    Science.gov (United States)

    Safioui, Jassem; Leo, François; Kuyken, Bart; Gorza, Simon-Pierre; Selvaraja, Shankar Kumar; Baets, Roel; Emplit, Philippe; Roelkens, Gunther; Massar, Serge

    2014-02-10

    We report supercontinuum (SC) generation centered on the telecommunication C-band (1550 nm) in CMOS compatible hydrogenated amorphous silicon waveguides. A broadening of more than 550 nm is obtained in 1cm long waveguides of different widths using as pump picosecond pulses with on chip peak power as low as 4 W.

  5. First-principles study of hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Jarolimek, K.; Groot, R.A. de; Wijs, G.A. de; Zeman, M.

    2009-01-01

    We use a molecular-dynamics simulation within density-functional theory to prepare realistic structures of hydrogenated amorphous silicon. The procedure consists of heating a crystalline structure of Si64H8 to 2370 K, creating a liquid and subsequently cooling it down to room temperature. The effect

  6. First-principles study of hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Jarolimek, K.; Groot, R.A. de; Wijs, G.A. de; Zeman, M.

    2009-01-01

    We use a molecular-dynamics simulation within density-functional theory to prepare realistic structures of hydrogenated amorphous silicon. The procedure consists of heating a crystalline structure of Si64H8 to 2370 K, creating a liquid and subsequently cooling it down to room temperature. The effect

  7. Donor-hydrogen complexes in crystalline silicon

    NARCIS (Netherlands)

    Liang, Z.N.; Niesen, L; Haas, C; Denteneer, P.J.H.

    1996-01-01

    Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing Sb-119 --> Sn-119 source Mossbauer spectroscopy and a low-energy H implantation technique. In addition to a visible component, we observe a large decrease of the Mossbauer intensity associated with

  8. Donor-hydrogen complexes in crystalline silicon

    NARCIS (Netherlands)

    Liang, Z.N.; Niesen, L; Haas, C; Denteneer, P.J.H.

    1996-01-01

    Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing Sb-119 --> Sn-119 source Mossbauer spectroscopy and a low-energy H implantation technique. In addition to a visible component, we observe a large decrease of the Mossbauer intensity associated with th

  9. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and 4-step laser scribing were researched, developed, and introduced into the production line to produce solar panels with various colors, such as purple, dark blue, light blue, silver, golden, orange, red wine, and coffee. The highest module power is 105 W and the highest visible light transmittance is near 20%.

  10. Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

    Institute of Scientific and Technical Information of China (English)

    DING Wen-ge; YU Wei; ZHANG Jiang-yong; HAN Li; FU Guang-sheng

    2006-01-01

    The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the microstructures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.

  11. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

    Directory of Open Access Journals (Sweden)

    Jia Ge

    2014-01-01

    Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

  12. Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); Matsuki, Yasuo [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); Yokkaichi Research Center, JSR Corporation, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552 (Japan); Shimoda, Tatsuya [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 (Japan)

    2012-08-31

    The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of Si-Si bonds are concluded for the pyrolysis temperature T{sub p} = 270 to 360 Degree-Sign C. The appearance of amorphous silicon phonon bands in Raman spectra for films prepared at T{sub p} {>=} 330 Degree-Sign C suggests the construction of a three-dimensional amorphous silicon network. Films prepared at T{sub p} {>=} 360 Degree-Sign C exhibit a hydrogen content near 10 at.% and an optical gap near 1.6 eV similar to device-grade vacuum processed a-Si:H. However, the infrared microstructure factor, the spin density, and the photosensitivity require significant improvements. - Highlights: Black-Right-Pointing-Pointer We fabricate hydrogenated amorphous silicon (a-Si:H) films by a solution process. Black-Right-Pointing-Pointer The a-Si:H films are prepared by pyrolytic transformation in polysilane solution. Black-Right-Pointing-Pointer We investigate basic properties in relation to the pyrolysis temperature. Black-Right-Pointing-Pointer Raman spectra, hydrogen content, and optical gap are similar to device-grade a-Si:H. Black-Right-Pointing-Pointer Microstructure factor, spin density, and photoconductivity show poor quality.

  13. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  14. Light absorption engineering of hydrogenated nanocrystalline silicon by femtosecond laser.

    Science.gov (United States)

    Zheng, D Q; Ma, Y J; Xu, L; Su, W A; Ye, Q H; Oh, J I; Shen, W Z

    2012-09-01

    The light absorption coefficient of hydrogenated nanocrystalline silicon has been engineered to have a Gaussian distribution by means of absorption modification using a femtosecond laser. The absorption-modified sample exhibits a significant absorption enhancement of up to ∼700%, and the strong absorption does not depend on the incident light. We propose a model responsible for this interesting behavior. In addition, we present an optical limiter constructed through this absorption engineering method.

  15. Similarities in the electrical conduction processes in hydrogenated amorphous silicon oxynitride and silicon nitride

    CERN Document Server

    Kato, H; Ohki, Y; Seol, K S; Noma, T

    2003-01-01

    Electrical conduction at high fields was examined in a series of hydrogenated amorphous silicon oxynitride and silicon nitride films with different nitrogen contents deposited by plasma-enhanced chemical vapour deposition. It was shown that the conduction is attributable to the Poole-Frenkel (PF) emission in the two materials. The energy depths of the PF sites and the dependences on the sample's chemical composition are quite similar for the two samples. It is considered that the PF sites in the two materials are identical.

  16. Silicon Nanowires with MoSx and Pt as Electrocatalysts for Hydrogen Evolution Reaction

    Directory of Open Access Journals (Sweden)

    S. H. Hsieh

    2016-01-01

    Full Text Available A convenient method was used for synthesizing Pt-nanoparticle/MoSx/silicon nanowires nanocomposites. Obtained Pt-MoSx/silicon nanowires electrocatalysts were characterized by transmission electron microscopy (TEM. The hydrogen evolution reaction efficiency of the Pt-MoSx/silicon nanowire nanocomposite catalysts was assessed by examining polarization and electrolysis measurements under solar light irradiations. The electrochemical characterizations demonstrate that Pt-MoSx/silicon nanowire electrodes exhibited an excellent catalytic activity for hydrogen evolution reaction in an acidic electrolyte. The hydrogen production capability of Pt-MoSx/silicon nanowires is also comparable to MoSx/silicon nanowires and Pt/silicon nanowires. Electrochemical impedance spectroscopy experiments suggest that the enhanced performance of Pt-MoSx/silicon nanowires can be attributed to the fast electron transfer between Pt-MoSx/silicon nanowire electrodes and electrolyte interfaces.

  17. Hydrogenated amorphous silicon thin film anode for proton conducting batteries

    Science.gov (United States)

    Meng, Tiejun; Young, Kwo; Beglau, David; Yan, Shuli; Zeng, Peng; Cheng, Mark Ming-Cheng

    2016-01-01

    Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g-1 for the 38th cycle and retained 707 mAh g-1 after 500 cycles. A maximum discharge capacity of 3635 mAh g-1 was obtained at a lower discharge rate, 510 mA g-1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si-H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si-H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g-1.

  18. Pin solar cells based on amorphous and microcrystalline silicon. Final report; PIN-Solarzellen auf der Basis von amorphem und mikrokristallinem Silizium mit stabilisierten hohen Wirkungsgraden. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, M.B.; Brummack, H.

    1998-12-01

    We develop solar cells based on amorphous and nanocrystalline silicon thin films. Transient forward current switching and time-of-flight measurements are applied to qualify real solar cells. The main goal of this programme is attaining high and stable photovoltaic conversion efficiencies. In order to optimise efficiency, we had to carefully analyse the performance-limiting interfaces by joint in-situ ellipsometry and atomic force microscopy investigations. Several methods of improving the interface between transparent conducting oxide (TCO) and the p-doped window layers have been tested, and the kinetic and spectroscopic ellipsometry data provide a detailed knowledge on the initial growth of amorphous as well as nanocrystalline silicon layers. CO{sub 2} plasma treatment turns out to grow a protecting silicon oxide layer by chemical transport, ZnO proves to be the chemically most stable TCO option. Initial efficiencies exceeding 10% and stabilising at 8.4% in aSi:H tandem structures have been achieved by proper hydrogen dilution of the process gases. Hydrogen dilution does also play a very important role for improving the electronic quality of nanocrystalline silicon from very high frequency (VHF) plasma deposition or thermocatalytic hot-wire CVD. Aiming at high efficiency nanocrystalline bottom cells for micromorph stacked solar cell arrangements, we show the large-area feasibility of the high-rate deposition method and analyse the impact of the deposition parameters on optic and electronic film properties. (orig.) [Deutsch] Im Rahmen des Vorhabens wurden Duennschichtsolarzellen auf der Basis amorphen und nanokristallinen Siliciums entwickelt und im Hinblick auf hohe stabilisierte Wirkungsgrade optimiert. Tandemstrukturen aus amorphem Silicium erreichen anfaenglich photovoltaische Wandlungswirkungsgrade ueber 10% und stabilisierte Werte von 8,4%. Ein erster Schwerpunkt der Untersuchungen lag bei der Optimierung der kritischen TCO/p- und p/i-Grenzflaechen. Der

  19. A DLTS study of hydrogen doped czochralski-grown silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jelinek, M. [Infineon Technologies Austria AG, 9500 Villach (Austria); Laven, J.G. [Infineon Technologies AG, 81726 Munich (Germany); Kirnstoetter, S. [Institute of Solid State Physics, Graz University of Technology, 8010 Graz (Austria); Schustereder, W. [Infineon Technologies Austria AG, 9500 Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, 81726 Munich (Germany); Rommel, M. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Frey, L. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Chair of Electron Devices, FAU Erlangen-Nuremberg, 91058 Erlangen (Germany)

    2015-12-15

    In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10–15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

  20. High thermal conductivity of a hydrogenated amorphous silicon film.

    Science.gov (United States)

    Liu, Xiao; Feldman, J L; Cahill, D G; Crandall, R S; Bernstein, N; Photiadis, D M; Mehl, M J; Papaconstantopoulos, D A

    2009-01-23

    We measured the thermal conductivity kappa of an 80 microm thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3omega (80-300 K) and the time-domain thermo-reflectance (300 K) methods. The kappa is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theory using a tight-binding method on three 1000 atom continuous random network models. The theory gives higher kappa for more ordered models, but not high enough to explain our results, even after extrapolating to lower frequencies with a Boltzmann approach. Our results show that this material is more ordered than any amorphous silicon previously studied.

  1. Evaluation of hydrogen and oxygen impurity levels on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Kenny, M.J.; Wielunski, L.S.; Netterfield, R.P.; Martin, P.J.; Leistner, A. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics

    1996-12-31

    This paper reports on surface analytical techniques used to quantify surface concentrations of impurities such as oxygen and hydrogen. The following analytical techniques were used: Rutherford and Backscattering, elastic recoil detection, time-of-flight SIMS, spectroscopic ellipsometry, x-ray photoelectron spectroscopy. The results have shown a spread in thickness of oxide layer, ranging from unmeasurable to 1.6 nm. The data must be considered as preliminary at this stage, but give some insight into the suitability of the techniques and a general idea of the significance of impurities at the monolayer level. These measurements have been carried out on a small number of silicon surfaces both semiconductor grade <111> crystalline material and silicon which has been used in sphere fabrication. 5 refs., 1 fig.

  2. A DLTS study of hydrogen doped czochralski-grown silicon

    Science.gov (United States)

    Jelinek, M.; Laven, J. G.; Kirnstoetter, S.; Schustereder, W.; Schulze, H.-J.; Rommel, M.; Frey, L.

    2015-12-01

    In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10-15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

  3. Light-induced metastable structural changes in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fritzsche, H. [Univ. of Chicago, IL (United States)

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  4. Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects

    Science.gov (United States)

    Kuisseu, Pauline Sylvia Pokam; Pingault, Timothée; Ntsoenzok, Esidor; Regula, Gabrielle; Mazen, Frédéric; Sauldubois, Audrey; Andreazza, Caroline

    2017-06-01

    MeV energy hydrogen implantation in silicon followed by a thermal annealing is a very smart way to produce high crystalline quality silicon substrates, much thinner than what can be obtained by diamond disk or wire sawing. Using this kerf-less approach, ultra-thin substrates with thicknesses between 15 μm and 100 μm, compatible with microelectronic and photovoltaic applications are reported. But, despite the benefits of this approach, there is still a lack of fundamental studies at this implantation energy range. However, if very few papers have addressed the MeV energy range, a lot of works have been carried out in the keV implantation energy range, which is the one used in the smart-cut® technology. In order to check if the nature and the growth mechanism of extended defects reported in the widely studied keV implantation energy range could be extrapolated in the MeV range, the thermal evolution of extended defects formed after MeV hydrogen implantation in (100) Si was investigated in this study. Samples were implanted at 1 MeV with different fluences ranging from 6 × 1016 H/cm2 to 2 × 1017 H/cm2 and annealed at temperatures up to 873 K. By cross-section transmission electron microscopy, we found that the nature of extended defects in the MeV range is quite different of what is observed in the keV range. In fact, in our implantation conditions, the generated extended defects are some kinds of planar clusters of gas-filled lenses, instead of platelets as commonly reported in the keV energy range. This result underlines that hydrogen behaves differently when it is introduced in silicon at high or low implantation energy. The activation energy of the growth of these extended defects is independent of the chosen fluence and is between (0.5-0.6) eV, which is very close to the activation energy reported for atomic hydrogen diffusion in a perfect silicon crystal.

  5. Eigenmode Splitting in all Hydrogenated Amorphous Silicon Nitride Coupled Microcavity

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xian-Gao; HUANG Xin-Fan; CHEN Kun-Ji; QIAN Bo; CHEN San; DING Hong-Lin; LIU Sui; WANG Xiang; XU Jun; LI Wei

    2008-01-01

    Hydrogenated amorphous silicon nitride based coupled optical microcavity is investigated theoretically and experimentally. The theoretical calculation of the transmittance spectra of optical microcavity with one cavity and coupled microcavity with two-cavity is performed.The optical eigenmode splitting for coupled microcavity is found due to the interaction between the neighbouring localized cavities.Experimentally,the coupled cavity samples are prepared by plasma enhanced chemical vapour deposition and characterized by photoluminescence measurements.It is found that the photoluminescence peak wavelength agrees well with the cavity mode in the calculated transmittance spectra.This eigenmode splitting is analogous to the electron state energy splitting in diatom molecules.

  6. Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire

    Institute of Scientific and Technical Information of China (English)

    Zhu Xiu-Hong; Chen Guang-Hua; Yin Sheng-Yi; Rong Yan-Dong; Zhang Wen-Li; Hu Yue-Hui

    2005-01-01

    The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability, and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71× 105.

  7. Metallic nanostructure formation limited by the surface hydrogen on silicon.

    Science.gov (United States)

    Perrine, Kathryn A; Teplyakov, Andrew V

    2010-08-03

    Constant miniaturization of electronic devices and interfaces needed to make them functional requires an understanding of the initial stages of metal growth at the molecular level. The use of metal-organic precursors for metal deposition allows for some control of the deposition process, but the ligands of these precursor molecules often pose substantial contamination problems. One of the ways to alleviate the contamination problem with common copper deposition precursors, such as copper(I) (hexafluoroacetylacetonato) vinyltrimethylsilane, Cu(hfac)VTMS, is a gas-phase reduction with molecular hydrogen. Here we present an alternative method to copper film and nanostructure growth using the well-defined silicon surface. Nearly ideal hydrogen termination of silicon single-crystalline substrates achievable by modern surface modification methods provides a limited supply of a reducing agent at the surface during the initial stages of metal deposition. Spectroscopic evidence shows that the Cu(hfac) fragment is present upon room-temperature adsorption and reacts with H-terminated Si(100) and Si(111) surfaces to deposit metallic copper. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are used to follow the initial stages of copper nucleation and the formation of copper nanoparticles, and X-ray energy dispersive spectroscopy (XEDS) confirms the presence of hfac fragments on the surfaces of nanoparticles. As the surface hydrogen is consumed, copper nanoparticles are formed; however, this growth stops as the accessible hydrogen is reacted away at room temperature. This reaction sets a reference for using other solid substrates that can act as reducing agents in nanoparticle growth and metal deposition.

  8. Dielectric Function of Silicon Nanoclusters:Role of Hydrogen

    Institute of Scientific and Technical Information of China (English)

    SIB KRISHNA Ghoshal; M.R.Sahar; M.S.Rohani

    2011-01-01

    @@ Electronic and optical properties of small silicon quantum dots having 3 to 44 atoms per dot with and without surface passivation are investigated by computer simulation using the pseudo-potential approach.An empirical pseudo-potential Hamiltonian,a plane-wave basis expansion and a basic tetrahedral structure with undistorted local bonding configurations are used.The structures of the quantum dots are relaxed and optimized before and after hydrogen passivation.It is found that the gap increases more for a hydrogenated surface than the unpassivated one.Thus,both quantum confinement and surface passivation determine the optical and electronic properties of Si quantum dots.Visible luminescence is probably due to the radiative recombination of electrons and holes in the quantum-confined nanostructures.The effect of passivation of the surface dangling bonds by hydrogen atoms and the role of surface states on the gap energy is also examined.The results for the density of states,the dielectric function,the frequency dependent optical absorption cross section,the extinction coefficient and the static dielectric constants of the size are presented.The importance of the confinement and the role of surface passivation on the optical effects are discussed.%Electronic and optical properties of small silicon quantum dots having 3 to 44 atoms per dot with and without surface passivation are investigated by computer simulation using the pseudo-potential approach. An empirical pseudo-potential Hamiltonian, a plane-wave basis expansion and a basic tetrahedral structure with undistorted local bonding configurations are used. The structures of the quantum dots are relaxed and optimized before and after hydrogen passivation. It is found that the gap increases more for a hydrogenated surface than the unpassivated one. Thus, both quantum confinement and surface passivation determine the optical and electronic properties of Si quantum dots. Visible luminescence is probably due to the

  9. Laser direct writing of oxide structures on hydrogen-passivated silicon surfaces

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Birkelund, Karen; Grey, Francois;

    1996-01-01

    A focused laser beam has been used to induce oxidation of hydrogen-passivated silicon. The scanning laser beam removes the hydrogen passivation locally from the silicon surface, which immediately oxidizes in air. The process has been studied as a function of power density and excitation wavelengt...

  10. Nanolithography on hydrogen-terminated silicon by scanning-probe microscopy

    NARCIS (Netherlands)

    Schönenberger, Christian; Kramer, Niels

    1996-01-01

    Scanning-probe microscopes (SPM), i.e. the scanning-tunneling and force microscopes, can be used to locally oxidize hydrogen-terminated silicon and hydrogenated amorphous silicon. Because of its reliability and potential for pattern transfer, this lithography process has found great attention and ha

  11. Laser assisted patterning of hydrogenated amorphous silicon for interdigitated back contact silicon heterojunction solar cell

    Science.gov (United States)

    De Vecchi, S.; Desrues, T.; Souche, F.; Muñoz, D.; Lemiti, M.

    2012-10-01

    This work reports on the elaboration of a new industrial process based on laser selective ablation of dielectric layers for Interdigitated Back Contact Silicon Heterojunction (IBC Si-HJ) solar cells fabrication. Choice of the process is discussed and cells are processed to validate its performance. A pulsed green laser (515nm) with 10-20ns pulse duration is used for hydrogenated amorphous silicon (a-Si:H) layers patterning steps, whereas metallization is made by screen printed. High Open-Circuit Voltage (Voc=699mV) and Fill Factor (FF=78.5%) values are obtained simultaneously on IBC Si-HJ cells, indicating a high surface passivation level and reduced resistive losses. An efficiency of 19% on non textured 26 cm² solar cells has been reached with this new industrial process.

  12. Optoelectronic properties of hot-wire silicon layers deposited at 100 °C

    NARCIS (Netherlands)

    Brinza, M.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    Hot-wire chemical vapor deposition is employed for the deposition of amorphous and microcrystalline silicon layers at substrate temperature kept below 100 °C with the aid of active cooling of the substrate holder. The hydrogen dilution is varied in order to investigate films at the amorphous-to-micr

  13. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor deposition (PECVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scattering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.

  14. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  15. Reaction dynamics of molecular hydrogen on silicon surfaces

    DEFF Research Database (Denmark)

    Bratu, P.; Brenig, W.; Gross, A.

    1996-01-01

    between the two surfaces. These results indicate that tunneling, molecular vibrations, and the structural details of the surface play only a minor role for the adsorption dynamics. Instead, they appear to be governed by the localized H-Si bonding and Si-Si lattice vibrations. Theoretically, an effective...... of the preexponential factor by about one order of magnitude per lateral degree of freedom. Molecular vibrations have practically no effect on the adsorption/desorption dynamics itself, but lead to vibrational heating in desorption with a strong isotope effect. Ab initio calculations for the H-2 interaction......Experimental and theoretical results on the dynamics of dissociative adsorption and recombinative desorption of hydrogen on silicon are presented. Using optical second-harmonic generation, extremely small sticking probabilities in the range 10(-9)-10(-5) could be measured for H-2 and D-2 on Si(111...

  16. Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters

    Institute of Scientific and Technical Information of China (English)

    ZHOU Bing-Qing; LIU Feng-Zhen; ZHANG Qun-Fang; XU Ying; ZHOU Yu-Qin; LIU Jin-Long; ZHU Mei-Fang

    2006-01-01

    The p-type microcrystalline silicon (fj,c-Si) on n-type crystalline silicon (c-Si) heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD). The effect of the pc-Si:H p-layers on the performance of the heterojunction solar cells is investigated. Optimum μcSi:H p-layer is obtained with hydrogen dilution ratio of 99.65%, rf-power of 0.08 W/cm2, gas phase doping ratio of 0.125%, and the p-layer thickness of 15 nm. We fabricate μc-Si:H(p)/c-Si(n) heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.

  17. Hydrogen plasma treatment of silicon dioxide for improved silane deposition.

    Science.gov (United States)

    Gupta, Vipul; Madaan, Nitesh; Jensen, David S; Kunzler, Shawn C; Linford, Matthew R

    2013-03-19

    We describe a method for plasma cleaning silicon surfaces in a commercial tool that removes adventitious organic contamination and enhances silane deposition. As shown by wetting, ellipsometry, and XPS, hydrogen, oxygen, and argon plasmas effectively clean Si/SiO2 surfaces. However, only hydrogen plasmas appear to enhance subsequent low-pressure chemical vapor deposition of silanes. Chemical differences between the surfaces were confirmed via (i) deposition of two different silanes: octyldimethylmethoxysilane and butyldimethylmethoxysilane, as evidenced by spectroscopic ellipsometry and wetting, and (ii) a principal components analysis (PCA) of TOF-SIMS data taken from the different plasma-treated surfaces. AFM shows no increase in surface roughness after H2 or O2 plasma treatment of Si/SiO2. The effects of surface treatment with H2/O2 plasmas in different gas ratios, which should allow greater control of surface chemistry, and the duration of the H2 plasma (complete surface treatment appeared to take place quickly) are also presented. We believe that this work is significant because of the importance of silanes as surface functionalization reagents, and in particular because of the increasing importance of gas phase silane deposition.

  18. Effect of Hydrogen Dilution on Growth of Silicon Nanocrystals Embedded in Silicon Nitride Thin Film bv Plasma-Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    DING Wenge; ZHEN Lanfang; ZHANG Jiangyong; LI Yachao; YU Wei; FU Guangsheng

    2007-01-01

    An investigation was conducted into the effect of hydrogen dilution on the mi-crostructure and optical properties of silicon nanograins embedded in silicon nitride (Si/SiNx) thin film deposited by the helicon wave plasma-enhanced chemical vapour deposition technique. With Ar-diluted SiH4 and N2 as the reactant gas sources in the fabrication of thin film, the film was formed at a high deposition rate. There was a high density of defect at the amorphous silicon (a-Si)/SiNx interface and a relative low optical gap in the film. An addition of hydrogen into the reactant gas reduced the film deposition rate sharply. The silicon nanograins in the SiNx matrix were in a crystalline state, and the density of defects at the silicon nanocrystals (nc-Si)/SiNx interface decreased significantly and the optical gap of the films widened. These results suggested that hydrogen activated by the plasma could not only eliminate in the defects between the interface of silicon nanograins and SiNx matrix, but also helped the nanograins transform from the amorphous into crystalline state. By changing the hydrogen dilution ratio in the reactant gas sources, a tunable band gap from 1.87 eV to 3.32 eV was obtained in the Si/SiNx film.

  19. Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

    Directory of Open Access Journals (Sweden)

    P.D. Rybalko

    2016-10-01

    Full Text Available Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

  20. Hydrogen generation using silicon nanoparticles and their mixtures with alkali metal hydrides

    Science.gov (United States)

    Patki, Gauri Dilip

    Hydrogen is a promising energy carrier, for use in fuel cells, engines, and turbines for transportation or mobile applications. Hydrogen is desirable as an energy carrier, because its oxidation by air releases substantial energy (thermally or electrochemically) and produces only water as a product. In contrast, hydrocarbon energy carriers inevitably produce CO2, contributing to global warming. While CO2 capture may prove feasible in large stationary applications, implementing it in transportation and mobile applications is a daunting challenge. Thus a zero-emission energy carrier like hydrogen is especially needed in these cases. Use of H2 as an energy carrier also brings new challenges such as safe handling of compressed hydrogen and implementation of new transport, storage, and delivery processes and infrastructure. With current storage technologies, hydrogen's energy per volume is very low compared to other automobile fuels. High density storage of compressed hydrogen requires combinations of high pressure and/or low temperature that are not very practical. An alternative for storage is use of solid light weight hydrogenous material systems which have long durability, good adsorption properties and high activity. Substantial research has been conducted on carbon materials like activated carbon, carbon nanofibers, and carbon nanotubes due to their high theoretical hydrogen capacities. However, the theoretical values have not been achieved, and hydrogen uptake capacities in these materials are below 10 wt. %. In this thesis we investigated the use of silicon for hydrogen generation. Hydrogen generation via water oxidation of silicon had been ignored due to slow reaction kinetics. We hypothesized that the hydrogen generation rate could be improved by using high surface area silicon nanoparticles. Our laser-pyrolysis-produced nanoparticles showed surprisingly rapid hydrogen generation and high hydrogen yield, exceeding the theoretical maximum of two moles of H2 per

  1. Self-heated silicon nanowires for high performance hydrogen gas detection

    Science.gov (United States)

    Ahn, Jae-Hyuk; Yun, Jeonghoon; Moon, Dong-Il; Choi, Yang-Kyu; Park, Inkyu

    2015-03-01

    Self-heated silicon nanowire sensors for high-performance, ultralow-power hydrogen detection have been developed. A top-down nanofabrication method based on well-established semiconductor manufacturing technology was utilized to fabricate silicon nanowires in wafer scale with high reproducibility and excellent compatibility with electronic readout circuits. Decoration of palladium nanoparticles onto the silicon nanowires enables sensitive and selective detection of hydrogen gas at room temperature. Self-heating of silicon nanowire sensors allows us to enhance response and recovery performances to hydrogen gas, and to reduce the influence of interfering gases such as water vapor and carbon monoxide. A short-pulsed heating during recovery was found to be effective for additional reduction of operation power as well as recovery characteristics. This self-heated silicon nanowire gas sensor will be suitable for ultralow-power applications such as mobile telecommunication devices and wireless sensing nodes.

  2. In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

    CERN Document Server

    Kessels, W M M; Sanden, M C M; Aydil, E S

    2002-01-01

    An in situ method based on attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) is presented for detecting surface silicon hydrides on plasma deposited hydrogenated amorphous silicon (a-Si:H) films and for determining their surface concentrations. Surface silicon hydrides are desorbed by exposing the a-Si:H films to low energy ions from a low density Ar plasma and by comparing the infrared spectrum before and after this low energy ion bombardment, the absorptions by surface hydrides can sensitively be separated from absorptions by bulk hydrides incorporated into the film. An experimental comparison with other methods that utilize isotope exchange of the surface hydrogen with deuterium showed good agreement and the advantages and disadvantages of the different methods are discussed. Furthermore, the determination of the composition of the surface hydrogen bondings on the basis of the literature data on hydrogenated crystalline silicon surfaces is presented, and quantification of the h...

  3. Radiolytic hydrogen generation at silicon carbide–water interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Schofield, Jennifer [School of Chemistry, The University of Manchester, Manchester M13 9PL (United Kingdom); Dalton Cumbrian Facility, The University of Manchester, Westlakes Science & Technology Park, Moor Row CA24 3HA (United Kingdom); Reiff, Sarah C. [Radiation Laboratory and Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Pimblott, Simon M. [School of Chemistry, The University of Manchester, Manchester M13 9PL (United Kingdom); Dalton Cumbrian Facility, The University of Manchester, Westlakes Science & Technology Park, Moor Row CA24 3HA (United Kingdom); LaVerne, Jay A., E-mail: laverne.1@nd.edu [Radiation Laboratory and Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States)

    2016-02-15

    While many of the proposed uses of SiC in the nuclear industry involve systems that are assumed to be dry, almost all materials have dissociated chemisorbed water associated with their surface, which can undergo chemistry in radiation fields. Silicon carbide α-phase and β-phase nanoparticles with water were irradiated with γ-rays and 5 MeV {sup 4}He ions followed by the determination of the production of molecular hydrogen, H{sub 2}, and characterization of changes in the particle surface. The yields of H{sub 2} from SiC–water slurries were always greater than expected from a simple mixture rule indicating that the presence of SiC was influencing the production of H{sub 2} from water, probably through an energy transfer from the solid to liquid phase. Although the increase in H{sub 2} yields was modest, a decrease in the water mass percentage led to an increase in H{sub 2} yields, especially for very low amounts of water. Surface analysis techniques included diffuse reflectance infrared Fourier transform spectroscopy (DRIFT), nitrogen absorption with the Brunauer – Emmett – Teller (BET) methodology for surface area determination, X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Little change in the SiC surface was observed following radiolysis except for some conversion of β-phase SiC to the α-phase and the formation of SiO{sub 2} with He ion radiolysis. - Highlights: • SiC–water interfaces were irradiated with γ-rays and 5 MeV He ions. • Hydrogen production from SiC–water slurries was greater than that for pure water. • Raman spectroscopy shows conversion of the α-phase SiC to the β-phase. • He ion radiolysis resulted in the formation of SiO{sub 2} on the surface.

  4. Optical near-field lithography on hydrogen-passivated silicon surfaces

    DEFF Research Database (Denmark)

    Madsen, Steen; Müllenborn, Matthias; Birkelund, Karen

    1996-01-01

    We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced...

  5. The effect of hydrogen on the morphology of n-type silicon electrodes under electrochemical conditions

    DEFF Research Database (Denmark)

    Goldar, A.; Roser, S.J.; Caruana, D.

    2001-01-01

    We study the electrochemical roughening of a silicon electrode surface during the hydrogen evolution reaction in a fluoride electrolyte using neutron reflection. We demonstrate that as the roughening process modifies the morphology of the silicon surface we can follow the changes by observing...

  6. Ion beam assisted deposition of hydrogenated amorphous silicon nitride

    Science.gov (United States)

    Hubler, G. K.; Donovan, E. P.; Gossett, C. R.

    1994-06-01

    Hydrogenated silicon nitride films were produced near room temperature by electron beam evaporation of Si and simultaneous bombardment with a 500 eV ammonia ion beam from a Kaufman ion source and for a variety of ratios of incident charge to evaporant fluxes. The composition of N, Si and H in the films as a function of ion current density was measured by means of Rutherford backscattering and elastic recoil detection analyses. Reflection and transmission spectroscopy in the wavelength range 400 nm to 3125 nm were employed to measure optical thickness and refractive index. From the data we extracted the number of nitrogen atoms in the ammonia beam per unit charge collected, the sputtering coefficient for ammonia incident on Si, and the refractive index versus composition of the alloys. At the highest N composition, the films were clear in the visible with the UV cut-off less than 400 nm, the index was 1.80 which is lower than that of pure Si3N4 and the H content was as high as 27 at.%.

  7. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

    Science.gov (United States)

    Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

    2016-06-22

    While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.

  8. Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells

    Science.gov (United States)

    Keya, Kimitaka; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2015-09-01

    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  9. The specific heat of pure and hydrogenated amorphous silicon

    Science.gov (United States)

    Queen, Daniel Robert

    At low temperature, amorphous materials have low energy excitations that result in a heat capacity that is in excess of the Debye heat capacity calculated from the sound velocity. These excitations are ubiquitous to the glassy state and occur with roughly the same density for all glasses. The specific heat has a linear temperature dependence below 1K that has been described by the phenomenological two-level systems (TLS) model in addition to a T 3 temperature dependence which is in excess of the T3 Debye specific heat. It is still unknown what exact mechanism gives rise to the TLS but it is assumed that groups of atoms have configurations that are close in energy and, at low temperature, these atoms can change configurations by tunneling through the energy barrier separating them. It has been an open question as to whether tetrahedrally bonded materials, like amorphous silicon, can support TLS due to the over-constrained nature of their bonding. It is shown in this work that amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) have specific heat CP in excess of the Debye specific heat which depends on the details of the growth process. There is a linear term that is due to TLS in addition to an excess T3 contribution. We find that the TLS density depends on number density of atoms in the a-Si film and that the presence of hydrogen in a-Si:H increases CP further. We suggest that regions of low density are sufficiently under-constrained to support tunneling between structural configurations at low temperature as described by the TLS model. The presence of H further lowers the energy barriers for the tunneling process resulting in an increase in TLS density in a-Si:H. The presence of H in a-Si:H network is found to be metastable. Annealing causes H to diffuse away from clustered regions which reduces the density of TLS. A low temperature anomaly is found in the a-Si:H films in their as prepared state that is of unknown origin but appears to take the

  10. Hydrogen related crystallization in intrinsic hydrogenated amorphous silicon films prepared by reactive radiofrequency magnetron sputtering at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Senouci, D. [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Baghdad, R., E-mail: r_baghdad@mail.univ-tiaret.dz [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); Belfedal, A.; Chahed, L. [LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Portier, X. [CIMAP, CEA, CNRS UMR 6252-ENSICAEN, UCBN, 6 Bvd Marechal Juin, 14050 Caen Cedex (France); Charvet, S. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France); Kim, K.H. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); TOTAL S.A., Gas and Power, R and D Division, Courbevoie (France); Roca i Cabarrocas, P. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); Zellama, K. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France)

    2012-11-01

    We present an investigation on the transition from amorphous to nanocrystalline silicon and associated hydrogen changes during the first steps of hydrogenated nanocrystalline silicon growth for films elaborated by reactive radiofrequency magnetron sputtering at a substrate temperature as low as room temperature and for deposition times varying from 3 to 60 min. Complementary experimental techniques have been used to characterize the films in their as-deposited state. They are completed by thermal hydrogen effusion experiments conducted in the temperature range, from room temperature to 800 Degree-Sign C. The results show that, during the initial stages of growth, the presence of a hydrogen-rich layer is necessary to initiate the crystallization process. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline silicon growth at room temperature. Black-Right-Pointing-Pointer Transition from amorphous to nanocrystalline silicon. Black-Right-Pointing-Pointer Chemical reactions of H atoms with strained Si-Si bonds. Black-Right-Pointing-Pointer H selective etching and chemical transport caused the silicon nucleation.

  11. Platinum monolayer electrocatalyst on gold nanostructures on silicon for photoelectrochemical hydrogen evolution.

    Science.gov (United States)

    Kye, Joohong; Shin, Muncheol; Lim, Bora; Jang, Jae-Won; Oh, Ilwhan; Hwang, Seongpil

    2013-07-23

    Pt monolayer decorated gold nanostructured film on planar p-type silicon is utilized for photoelectrochemical H2 generation in this work. First, gold nanostructured film on silicon was spontaneously produced by galvanic displacement of the reduction of gold ion and the oxidation of silicon in the presence of fluoride anion. Second, underpotential deposition (UPD) of copper under illumination produced Cu monolayer on gold nanostructured film followed by galvanic exchange of less-noble Cu monolayer with more-noble PtCl6(2-). Pt(shell)/Au(core) on p-type silicon showed the similar activity with platinum nanoparticle on silicon for photoelectrochemical hydrogen evolution reaction in spite of low platinum loading. From Tafel analysis, Pt(shell)/Au(core) electrocatalyst shows the higher area-specific activity than platinum nanoparticle on silicon demonstrating the significant role of underlying gold for charge transfer reaction from silicon to H(+) through platinum catalyst.

  12. Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiao-Dan; Sun Fu-He; Wei Chang-Chun; Sun Jian; Zhang De-Kun; Geng Xin-Hua; Xiong Shao-Zhen; Zhao Ying

    2009-01-01

    This paper studies boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

  13. Hydrogen passivation of electrically active defects in crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Milstein, J B; Tsuo, Y S; Osterwald, C R; White, C W

    1984-06-01

    We have observed significant improvements in the efficiencies of dendritic web and edge-supported-pulling (ESP) silicon sheet solar cells after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. We have determined that the silicon sputter rate for a constant ion beam flux of 0.60 +- 0.05 mA/cm/sup 2/ exhibits a maximum at approximately 1400 eV ion beam energy. We have observed that hydrogen ion beam treatment can result in a reduced fill factor, which is caused by damage to the front metallization of the cell rather than by damage to the p-n junction.

  14. Carbothermal synthesis of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Janney, M.A.; Wei, G.C.; Kennedy, C.R.; Harris, L.A.

    1985-05-01

    Silicon carbide powders were synthesized from various silica and carbon sources by a carbothermal reduction process at temperatures between 1500 and 1600/sup 0/C. The silica sources were fumed silica, methyltrimethoxysilane, and microcrystalline quartz. The carbon sources were petroleum pitch, phenolic resin, sucrose, and carbon black. Submicron SiC powders were synthesized. Their morphologies included equiaxed loosely-bound agglomerates, equiaxed hard-shell agglomerates, and whiskers. Morphology changed with the furnace atmosphere (argon, nitrogen, or nitrogen-4% hydrogen). The best sintering was observed in SiC derived from the fumed-silica-pitch and fumed-silica-sucrose precursors. The poorest sintering was observed in SiC derived from microcrystalline quartz and carbon black. 11 refs., 16 figs., 10 tabs.

  15. Boron-doped hydrogenated microcrystalline silicon oxide (μc-SiOx:H) for application in thin-film silicon solar cells

    NARCIS (Netherlands)

    Lambertz, A.; Finger, F.; Holländer, B.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    We report on the development of p-type μc-SiOx:H material, in particular the relationship between the deposition parameters and the material properties like band gap, electrical conductivity, and crystalline volume fraction. The material was deposited from gas mixtures of silane, carbon dioxide and

  16. Electrical detection of spin coherence in microcrystalline pin solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Behrends, Jan [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Berlin (Germany); Department of Physics, University of Utah, Salt Lake City, UT (United States); Boehme, Christoph; Lips, Klaus [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Berlin (Germany); Haas, Stefan [Institute of Photovoltaics, Forschungszentrum Juelich, Juelich (Germany); Rech, Bernd [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Berlin (Germany); Institute of Photovoltaics, Forschungszentrum Juelich, Juelich (Germany)

    2007-07-01

    Defects in the band gap of hydrogenated microcrystalline silicon ({mu}cSi:H) pin solar cells, even at low concentrations, can act as recombination centres and thus, they can influence the electronic properties of the device significantly. A powerful technique to investigate these recombination processes is pulsed electrically detected magnetic resonance (pEDMR). This method is based on transient photocurrent measurements after varying specific recombination or transport rates and reveals information about the microscopic mechanisms of recombination and transport that involve paramagnetic states. In this study we report on the application of pEDMR on state-of-the-art {mu}c-Si:H pin solar cells prepared on ZnO coated glass. An adapted contact structure allows the observation of Rabi oscillations in the photocurrent at low temperatures (T=10 K) reflecting coherent spin motion. The coherence time is found to be on the order of several hundred nanoseconds and is determined by recombination. A Fourier analysis of the observed Rabi oscillations allows a distinction between the involved recombination processes. A discussion on the different recombination mechanisms in {mu}c-Si:H cells is given.

  17. Catalytic membrane reactors based on macroporous silicon for hydrogen production

    OpenAIRE

    Vega Bru, Didac; Hernández Díaz, David; López, E. (Eduardo); Jiménez, Nuria; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón; Llorca Piqué, Jordi

    2010-01-01

    The typology of using hydrogen as an energy carrier and its implementation in portable fuel cells has motivated a considerable research interest in the development of new efficient hydrogen production technologies. Hydrogen storage and manipulation is however a problematic and hazardous issue. Therefore, the low temperature on-site steam reforming of alcohols for hydrogen supply offers a nice solution to safety and storage issues, while providing several environment advantages […] Peer Rev...

  18. The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

    Energy Technology Data Exchange (ETDEWEB)

    Qin Yanli; Yan Hengqing; Li Fei; Qiao Li; Liu Qiming [Department of Physics, Lanzhou University, Lanzhou 730000 (China); He Deyan, E-mail: hedy@lzu.edu.cn [Department of Physics, Lanzhou University, Lanzhou 730000 (China)

    2010-11-15

    Hydrogenated amorphous and microcrystalline silicon films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at low substrate temperatures using H{sub 2}-diluted SiH{sub 4} as a source gas. High-density plasma generated by inductively coupled excitation facilitates the crystallization of silicon films at low temperatures, and microcrystalline silicon films were obtained at the substrate temperature as low as 180 deg. C. The columnar structure of the films becomes more and more compact with an increase of their crystallinity. The reduction of hydrogen content in the films causes a narrowing of the optical bandgap and an enhancement of the absorption with increasing the substrate temperature. The microcrystalline silicon films show two electronic transport mechanisms: one is related to the density of state distribution in the temperature region near room temperature and the other is the variable range hopping between localized electronic states close to the Fermi level below 170 K. A reasonable explanation is presented for the dependence of the optoelectronic properties on the microstructure of the silicon films. The films prepared at a substrate temperature of 300 deg. C have highly crystalline and compact columnar structure, high optical absorption coefficient and electrical conductivity, and a low hydrogen content of 3.8%.

  19. Improvement of silicon direct bonding using surfaces activated by hydrogen plasma treatment

    CERN Document Server

    Choi, W B; Lee Jae Sik; Sung, M Y

    2000-01-01

    The plasma surface treatment, using hydrogen gas, of silicon wafers was studied as a pretreatment for silicon direct bonding. Chemical reactions of the hydrogen plasma with the surfaces were used for both surface activation and removal of surface contaminants. Exposure of the silicon wafers to the plasma formed an active oxide layer on the surface. This layer was hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposure time and power. The surface became smoother with shorter plasma exposure time and lower power. In addition, the plasma surface treatment was very efficient in removing the carbon contaminants on the silicon surface. The value of the initial surface energy, as estimated by using the crack propagation method, was 506 mJ/M sup 2 , which was up to about three times higher than the value for the conventional direct bonding method using wet chemical treatments.

  20. Multifunctional silicon surfaces: reaction of dichlorocarbene generated from Seyferth reagent with hydrogen-terminated silicon (111) surfaces.

    Science.gov (United States)

    Liu, Wenjun; Sharp, Ian D; Tilley, T Don

    2014-01-14

    Insertion of dichlorocarbene (:CCl2), generated by decomposition of the Seyferth reagent PhHgCCl2Br, into the Si-H bond of a tertiary silane to form a Si-CCl2H group is an efficient homogeneous, molecular transformation. A heterogeneous version of this reaction, between PhHgCCl2Br and a silicon (111) surface terminated by tertiary Si-H bonds, was studied using a combination of surface-sensitive infrared and X-ray photoelectron spectroscopies. The insertion of dichlorocarbene into surface Si-H bonds parallels the corresponding reaction of silanes in solution, to produce surface-bound dichloromethyl groups (Si-CCl2H) covering ∼25% of the silicon surface sites. A significant fraction of the remaining Si-H bonds on the surface was converted to Si-Cl/Br groups during the same reaction, with PhHgCCl2Br serving as a halogen atom source. The presence of two distinct environments for the chlorine atoms (Si-CCl2H and Si-Cl) and one type of bromine atom (Si-Br) was confirmed by Cl 2p, Br 3d, and C 1s X-ray photoelectron spectroscopy. The formation of reactive, halogen-terminated atop silicon sites was also verified by reaction with sodium azide or the Grignard reagent (CH3MgBr), to produce Si-N3 or Si-Me functionalities, respectively. Thus, reaction of a hydrogen-terminated silicon (111) surface with PhHgCCl2Br provides a facile route to multifunctional surfaces possessing both stable silicon-carbon and labile silicon-halogen sites, in a single pot synthesis. The reactive silicon-halogen groups can be utilized for subsequent transformations and, potentially, the construction of more complex organic-silicon hybrid systems.

  1. Complexes of silicon, vacancy, and hydrogen in diamond: A density functional study

    Science.gov (United States)

    Thiering, Gergő; Gali, Adam

    2015-10-01

    Paramagnetic luminescent point defects in diamond are increasingly important candidates for quantum information processing applications. Recently, the coherent manipulation of single silicon-vacancy defect spins has been demonstrated in chemical vapor deposited diamond samples where silicon may be introduced as a contamination in the growth process. Hydrogen impurity may simultaneously enter diamond too and form complexes with silicon-vacancy defects. However, relatively little is known about these complexes in diamond. Here we report plane-wave supercell density functional theory results on various complexes of silicon vacancy and hydrogen in diamond. We found a family of complexes of silicon, vacancies, and hydrogen atoms that are thermally stable in diamond with relatively low formation energies that might form yet unobserved or unidentified silicon-related defects. These complexes often show infrared optical transitions and are paramagnetic. We tentatively assign one of these complexes to a recently reported but yet unidentified infrared absorber center. We show that this center has a metastable triplet state and might exhibit a spin-selective decay to the ground state, thus it is an interesting candidate for quantum information processing applications. We also discuss here methodology aspects of calculating hyperfine parameters and intradefect level excitations in systems with notoriously complex electron states within hybrid density functional approach. We also demonstrate that a simplified approach using ab initio data can be very powerful to predict the relative intensities of the phonon replica associated with quasilocal vibration modes in the photoexcitation spectrum.

  2. Transport Properties of Hydrogen-Terminated Silicon Surface Controlled by Ionic-Liquid Gating

    Science.gov (United States)

    Sasama, Yosuke; Yamaguchi, Takahide; Tanaka, Masashi; Takeya, Hiroyuki; Takano, Yoshihiko

    2017-01-01

    We fabricated electric double-layer transistors on the hydrogen-terminated (111)-oriented surface of non-doped silicon using ionic liquid as a gate dielectric. We introduced hole carriers into silicon with the application of a negative gate voltage. The sheet resistance of silicon was controlled by more than three orders of magnitude at 220 K by changing the gate voltage. The temperature dependence of sheet resistance became weak as the gate voltage was increased, suggesting the approach to an insulator-metal transition.

  3. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

    OpenAIRE

    Sangchoel Kim; Jehoon Choi; Minsoo Jung; Seongjeen Kim; Sungjae Joo

    2013-01-01

    We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate ...

  4. N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition.

    Science.gov (United States)

    Chung, Yung-Bin; Park, Hyung-Ki; Lee, Sang-Hoon; Song, Jean-Ho; Hwang, Nong-Moon

    2011-09-01

    Since n-type crystalline silicon films have the electric property much better than those of hydrogenated amorphous and microcrystalline silicon films, they can enhance the performance of advanced electronic devices such as solar cells and thin film transistors (TFTs). Since the formation of amorphous silicon is unavoidable in the low temperature deposition of microcrystalline silicon on a glass substrate at temperatures less than 550 degrees C in the plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition (HWCVD), crystalline silicon films have not been deposited directly on a glass substrate but fabricated by the post treatment of amorphous silicon films. In this work, by adding the HCl gas, amorphous silicon-free n-type crystalline silicon films could be deposited directly on a glass substrate by HWCVD. The resistivity of the n-type crystalline silicon film for the flow rate ratio of [HCl]/[SiH4] = 7.5 and [PH3]/[SiH4] = 0.042 was 5.31 x 10(-4) ohms cm, which is comparable to the resistivity 1.23 x 10(-3) ohms cm of films prepared by thermal annealing of amorphous silicon films. The absence of amorphous silicon in the film could be confirmed by high resolution transmission electron microscopy.

  5. Influence of hydrogen content on the behavior of grain refinement in hypereutectic aluminum-silicon alloy

    Institute of Scientific and Technical Information of China (English)

    Lina Hu; Xiufang Bian; Youfeng Duan

    2004-01-01

    Dissolved hydrogen is harmful to mechanical properties of refined hypereutectic aluminum-silicon alloys. In the present work, by using a stepped-form mold and the hydrogen-detecting instrument HYSCAN Ⅱ, the relationship between the initial hydrogen content in the melt and the refinement effect on the casting of hypereutectic aluminum-silicon alloy was investigated. The experimental results show that the cooling rate, the hydrogen content and the grain refinement effect are three interactive factors. When the hydrogen content is above 0.20 mL/100 g and the cooling rate is lower than that in 50 mm-thick step, hydrogen dissolved in the alloy melt influences the grain refinement effect. With increasing the cooling rate, the critical hydrogen content increases too. It is expected that much hydrogen in the melt make the net interfacial energy larger than or equal to zero, resulting in the shielding of the particles AlP during solidification and that the critical gas content is closely related to the critical radius of embryo bubbles.

  6. Modeling the splitting of thin silicon films from porosified crystalline silicon upon high temperature annealing in hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Ghannam, Moustafa Y.; Raheem, Yaser Abdul; Alomar, Abdul Azeez [EE Department, College of Engineering and Petroleum, Kuwait University, Safat (Kuwait); Poortmans, Jef [IMEC, Leuven (Belgium)

    2012-10-15

    The role of hydrogen in promoting thin film splitting from crystalline silicon wafers with pores or trenches during high temperature annealing is investigated. During the treatment, trenches are transformed into spherical voids that may laterally channel and split off the substrate. It is shown that the conditions necessary for hydrogen to contribute to the establishment of high stress levels around transformed voids or of pressure inside the voids are usually not satisfied. Hence promoting void coalescence by substantial void volume growth resulting from stress enhanced vacancy diffusion and/or exfoliation of separated voids are unlikely to occur. Also, there are no experimental evidence that confirms the role of hydrogen in triggering premature void collapse by Griffith fracture at relatively lower stress levels in conjunction with reduced surface energy. Therefore, it is concluded that splitting occurs during high temperature annealing only when neighboring voids are close enough to systematically coalesce. In that case, hydrogen may react at high temperature with the internal silicon surface of the voids (walls) and contribute to breaking the thin straps separating the voids which promotes channelling and film splitting (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Large area plasma deposition of microcrystalline silicon for micromorph thin-film solar modules; Grossflaechige Plasmaabscheidung von mikrokristallinem Silizium fuer mikromorphe Duennschichtsolarmodule

    Energy Technology Data Exchange (ETDEWEB)

    Kilper, Thilo

    2009-07-01

    This thesis addresses aspects of {mu}c-Si:H absorber layer fabrication that possess a high technological relevance for the industrial serial production of micromorph thin-film solar modules. The performed investigations focused on a) the {mu}c-Si:H absorber layer deposition rate, b) low total gas flow processes that exhibit a high silane utilization and a distinctly reduced hydrogen consumption, and c) the influence of oxygen and nitrogen impurities on the performance of {mu}c-Si:H solar cells. For the fabrication of {mu}c-Si:H absorber layers in a 30 x 30 cm{sup 2} PECVD reactor equipped with rf planar electrodes, it was found that an increase of the plasma excitation frequency from 13.56 to 40.68 MHz enables significant higher deposition rates without losses in cell performance and film homogeneity. 40.68 MHz {mu}c-Si:H solar cells prepared at RD = 1 nm/s yielded conversion efficiencies up to 9.2 % and had a similar good performance as 13.56 MHz {mu}c-Si:H solar cells deposited at RD = 0.5 nm/s. At deposition rates of 2.5 nm/s 40,68 MHz {mu}c-Si:H solar cells exhibited cell efficiencies of nearly 8 %. Moreover, it was demonstrated that 40.68 MHz {mu}c-Si:H absorber layers on 30 x 30 cm{sup 2} substrates have a similar good homogeneity as 13.56 MHz {mu}c-Si:H absorber layers concerning the film thickness and the material properties. By implementing a process control it was possible to suppress the strong initial process drift of a 13.56 MHz 0.5 nm/s {mu}c-Si:H low total gas flow process in the 30 x 30 cm{sup 2} PECVD reactor. Due to the successful stabilization of the {mu}c-Si:H growth conditions during the complete absorber layer deposition procedure, an efficiency enhancement of +1 % absolute was gained and the best {mu}c-Si:H solar cells prepared with the controlled low total gas flow process yielded efficiencies of 8.8 %. However, compared to standard gas flow processes it was found that this controlled low total gas flow process exhibits a worse homogeneity

  8. Light-enhanced microcontact printing of 1-alkynes onto hydrogen-terminated silicon

    NARCIS (Netherlands)

    Maat, ter J.; Yang, M.; Scheres, L.M.W.; Kuypers, S.; Zuilhof, H.

    2010-01-01

    method for the direct patterning of 1-alkynes onto hydrogen-terminated silicon is presented. It combines microcontact printing with illumination through the stamp, and results in the formation of an alkenyl monolayer. The formation of heterogeneous monolayers is demonstrated by subsequent backfillin

  9. Four-wave mixing Bragg scattering in hydrogenated amorphous silicon waveguides.

    Science.gov (United States)

    Li, Kangmei; Sun, Hongcheng; Foster, Amy C

    2017-04-15

    We demonstrate 15% on-chip conversion efficiency of four-wave mixing Bragg scattering in a hydrogenated amorphous silicon waveguide with only 55 and 194 mW peak pump powers in the waveguide. The lightwaves can be maintained in the telecommunication band, and the operational bandwidth is measured to be larger than 4 nm.

  10. Hydrogenated Silicon Layers and Solar Cells Deposited at Very Low Substrate Temperature

    NARCIS (Netherlands)

    Bronsveld, P.C.P.

    2013-01-01

    For direct production of solar cells on cheap plastics, the quality of VHF-PECVD deposited intrinsic and doped silicon layers made at substrate temperatures ≤ 100 °C was optimized. The investigation showed that at lower substrate temperatures, higher hydrogen dilution of the source gas silane was re

  11. Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells

    NARCIS (Netherlands)

    Kind, R.; Van Swaaij, R.A.C.M.M.; Rubinelli, F.A.; Solntsev, S.; Zeman, M.

    2011-01-01

    The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate

  12. Low thermal budget rapid thermal annealing of hydrogenated PECVD silicon thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Farrokh-Baroughi, M.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2006-07-01

    The photovoltaic (PV) market is currently dominated by crystalline silicon solar cells, having a market share of more than 84 per cent. Half of the total price of the PV modules is attributed to the cost of silicon base materials. This paper presented a new approach towards low cost solar cell technologies. In particular, it presented a low temperature plasma enhanced chemical vapor deposition (PECVD) technique for emitter realization. The technique improves the junction quality by a medium temperature low thermal budget rapid thermal annealing (RTA) technique. The many advantages that RTA has for silicon processing was discussed with reference to rapid thermal processing (RTP) used for annealing low temperature deposited silicon thin films. Some of the attractive features of RTP include low cost, minimum overall thermal budget, low power consumption and high throughput. For all the annealed samples in this study which were deposited without hydrogen dilution, 90 per cent of the surface was full of pits caused mainly by hydrogen evolution from the films. It was suggested that high hydrogen dilution can enhance the film quality and reduce the number and size of pits for device applications, particularly for the solar cell applications. However, it was concluded that the growth mechanism of 91 per cent and 99 per cent hydrogen dilution on c-Si and glass substrates using the same process conditions are different and may lead to quasiepitaxial growth mechanism for the films deposited on the crystalline wafers. 21 tabs., 3 tabs., 9 figs.

  13. Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source

    NARCIS (Netherlands)

    Isai, Gratiela I.; Holleman, Jisk; Wallinga, Hans; Woerlee, Pierre H.

    2004-01-01

    Silicon nitride layers with very low hydrogen content (less than 1 atomic percent) were deposited at near room temperature, from N2 and SiH4, with a multipolar electron cyclotron resonance plasma. The influences of pressure and nitrogen flow rate on physical and electrical properties were studied in

  14. Hydrogen interactions with silicon-on-insulator materials

    NARCIS (Netherlands)

    Rivera de Mena, A.J.

    2003-01-01

    The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously

  15. Thermal post-deposition treatment effects on nanocrystalline hydrogenated silicon prepared by PECVD under different hydrogen flow rates

    Science.gov (United States)

    Amor, Sana Ben; Meddeb, Hosny; Daik, Ridha; Othman, Afef Ben; Slama, Sonia Ben; Dimassi, Wissem; Ezzaouia, Hatem

    2016-01-01

    In this paper, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited on mono-crystalline silicon substrate by plasma enhanced chemical vapor deposition (PECVD) under different hydrogen flow rates followed by a thermal treatment in an infrared furnace at different temperature ranging from 300 to 900 °C. The investigated structural, morphological and optoelectronic properties of samples were found to be strongly dependent on the annealing temperature. Raman spectroscopy revealed that nc-Si:H films contain crystalline, amorphous and mixed structures as well. We find that post-deposition thermal treatment may lead to a tendency for structural improvement and a decrease of the disorder in the film network at moderate temperature under 500 °C. As for annealing at higher temperature up to 900 °C induces the recrystallization of the film which is correlated with the grain size and volume fraction in the layer. We demonstrate that high annealing temperature can lead to a decrease of silicon-hydrogen bonds corresponding to a reduction of the amorphous matrix in the layer promoting the formation of covalent Si-Si bonds. The effusion of the hydrogen from the grown film leads to increase its density and therefore induces a decrease in the thickness of the layer. For post-deposition thermal treatment in temperature range under 700 °C, the post-deposition anneal seems to be crucial for obtaining good passivation quality as expressed by a minority carrier lifetime of 17 μs, as it allows a significant reduction in defect states at the layer/substrate interface. While for a temperature higher than 900 °C, the lifetime reduction is obtained because of hydrogen effusion phenomenon, thus a tendency for crystallization in the grown film.

  16. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    Energy Technology Data Exchange (ETDEWEB)

    Fortmann, C.M.; Hegedus, S.S. (Institute of Energy Conversion, Newark, DE (United States))

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  17. Infrared Insight into the Network of Hydrogenated Amorphous and Polycrystalline Silicon thin Films

    Directory of Open Access Journals (Sweden)

    Jarmila Mullerova

    2006-01-01

    Full Text Available IR measurements were carried out on both amorphous and polycrystalline silicon samples deposited by PECVDon glass substrate. The transition from amorphous to polycrystalline phase was achieved by increasing dilution of silaneplasma at the deposition process. The samples were found to be mixed phase materials. Commonly, infrared spectra ofhydrogenated silicon thin films yield information about microstructure, hydrogen content and hydrogen bonding to silicon. Inthis paper, additional understanding was retrieved from infrared response. Applying standard optical laws, effective mediatheory and Clausius-Mossoti approach concerning the Si-Si and Si-H bonds under IR irradiation as individual oscillators,refractive indices in the long wavelength limit, crystalline, amorphous and voids volume fractions and the mass density of thefilms were determined. The mass density was found to decrease with increasing crystalline volume fraction, which can beattributed to the void-dominated mechanism of network formation.

  18. Absorption and Luminescence of Hydrogen and Oxygen Passivated Silicon Quantum Dots

    Directory of Open Access Journals (Sweden)

    C. Rajesh1,

    2011-01-01

    Full Text Available Silicon (Si quantum dots (QDs passivated with oxygen and hydrogen of size 1 nm in diameter are prepared by wet chemical route and electrochemical route respectively. The optical measurements reveal the strong absorption feature around 4.7 eV and weak absorption at 3.4 eV for oxygen passivated Si QDs. Hydrogen passivated Si QDs of the same size show absorption at 4.9 eV. Both the oxygen and hydrogen passivated Si QDs show broad luminescence around 3.9 and 3.8 eV. Films of these QDs, when coated on crystalline silicon solar cells, show an increase in the efficiency of the solar cell by 12 %.

  19. Ab Initio Path Integral Molecular Dynamics Simulation of Hydrogen in Silicon

    Science.gov (United States)

    Probert, M. I. J.; Glover, M. J.

    2006-05-01

    We report results of a first-principles theoretical study of an isolated neutral hydrogen atom in crystalline silicon. Spin-polarised density functional theory is used to treat the electrons, and the path-integral molecular dynamics method is used to describe the quantum properties of the nucleus at finite temperature. This is necessary as the hydrogen atom has sufficiently low mass that it exhibits significant nuclear quantum delocalisation and zero-point motion even at room temperature. Unlike post-hoc treatments, such as calculating a static potential energy surface, the path-integral treatment enables such effects to be included "on-the-fly". This is found to be significant, as a coupling is found between the structure of the host silicon lattice and the quantum delocalisation of the hydrogen defect.

  20. Thermally assisted tunneling of hydrogen in silicon: A path-integral Monte Carlo study

    Science.gov (United States)

    Herrero, Carlos P.

    1997-04-01

    Quantum transition-state theory, based on the path-integral formalism, has been applied to study the jump rate of atomic hydrogen and deuterium in crystalline silicon. This technique provides a methodology to study the influence of vibrational mode quantization and quantum tunneling on the impurity jump rate. The atomic interactions were modeled by effective potentials, fitted to earlier ab initio pseudopotential calculations. Silicon nuclei were treated as quantum particles up to second-nearest neighbors of the impurity. The hydrogen jump rate follows an Arrhenius law, describable with classical transition-state theory, at temperatures higher than 100 K. At ~80 K, a change in the slope of the Arrhenius plot is obtained for hydrogen, as expected for the onset of a diffusion regime controlled by phonon-assisted tunneling of the impurity. For deuterium, no change of slope is observed in the studied temperature range (down to 40 K).

  1. Bio-inspired co-catalysts bonded to a silicon photocathode for solar hydrogen evolution

    DEFF Research Database (Denmark)

    Hou, Yidong; Abrams, Billie; Vesborg, Peter Christian Kjærgaard;

    2011-01-01

    part of the spectrum is utilized for hydrogen evolution while the blue part is reserved for the more difficult oxygen evolution. The samples have been illuminated with a simulated red part of the solar spectrum i.e. long wavelength (" > 620 nm) part of simulated AM 1.5G radiation. The current densities...... deposited on various supports. It will be demonstrated how this overpotential can be eliminated by depositing the same type of hydrogen evolution catalyst on p-type Si which can harvest the red part of the solar spectrum. Such a system could constitute the cathode part of a tandem dream device where the red...... at the reversible potential match the requirement of a photoelectrochemical hydrogen production system with a solar-to-hydrogen efficiency in excess of 10%. The experimental observations are supported by DFT calculations of the Mo3S4 cluster adsorbed on the hydrogen-terminated silicon surface providing insights...

  2. Silicon carbide-based hydrogen gas sensors for high-temperature applications.

    Science.gov (United States)

    Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

    2013-10-09

    We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

  3. Influence of laser annealing on hydrogen bonding in compensated polycrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saleh, R. [Jurusan Fisika, Fakultas MIPA, Universitas Indonesia, 16424 Depok (Indonesia)]. E-mail: rosarisaleh@research-ui.org; Nickel, N.H. [Hahn-Meitner-Institut Berlin, Kekulestr.5, 12489 Berlin (Germany); Maydell, K.V. [Hahn-Meitner-Institut Berlin, Kekulestr.5, 12489 Berlin (Germany)

    2005-09-01

    Compensated hydrogenated amorphous silicon films were crystallized using a step-by-step laser dehydrogenation and crystallization procedure. The influence of laser crystallization on hydrogen bonding is investigated employing Raman spectroscopy and hydrogen effusion measurements. In P-doped samples a considerable amount of hydrogen is accommodated in the clustered phase, while for B-doped samples most of the H atoms are accommodated in isolated Si-H bonds. In specimens where the boron and phosphorous doping is at equal levels, the hydrogen bonding configuration is close to that found for singly P-doped samples. From hydrogen effusion measurements, the hydrogen density-of-states distribution in fully crystallized poly-Si is derived. For the compensated poly-Si films four peaks arise in the H density-of-states distribution that are located at 2.0, 2.2, 2.5 and 2.8 eV below the hydrogen transport states. The peak observed at 2.8 eV below the hydrogen transport states is not observed in singly B-doped samples.

  4. Radiative processes of amorphization and hydrogenation in monocrystalline silicon

    CERN Document Server

    Dovbnya, A N; Dyomin, V S

    2001-01-01

    The processes described will form the H-concentration at the required depth of Si semiconductor due spin splitting of Si:H compounds with the intensive electron beams and processes of the photo stimulation of the volume diffusion. This will provide a continuous migration of hydrogen into the bulk material.

  5. Structural and optical properties of silicon nanoparticles prepared by pulsed laser ablation in hydrogen background gas

    Science.gov (United States)

    Makino, T.; Inada, M.; Yoshida, K.; Umezu, I.; Sugimura, A.

    We studied the structural and optical properties of silicon (Si) nanoparticles (np-Si) prepared by pulsed laser ablation (PLA) in hydrogen (H2) background gas. The mean diameter of the np-Si was estimated to be approximately 5 nm. The infrared absorption corresponding to Si-Hn (n=1,2,3) bonds was observed at around 2100 cm-1, and a Raman scattering peak corresponding to crystalline Si was observed at around 520 cm-1. These results indicate that nanoparticles are not an alloy of Si and hydrogen but Si nanocrystal covered by hydrogen or hydrogenated silicon. This means that surface passivated Si nanoparticles can be prepared by PLA in H2 gas. The band-gap energy of np-Si prepared in H2 gas (1.9 eV) was larger than that of np-Si prepared in He gas (1.6 eV) even though they are almost the same diameter. After decreasing the hydrogen content in np-Si by thermal annealing, the band-gap energy decreased, and reached the same energy level as np-Si prepared in He gas. Thus, the optical properties of np-Si were affected by the hydrogenation of the surface of np-Si.

  6. Picosecond all-optical switching in hydrogenated amorphous silicon microring resonators

    CERN Document Server

    Pelc, Jason S; Vo, Sonny; Santori, Charles; Fattal, David A; Beausoleil, Raymond G

    2014-01-01

    We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microring. In comparison with telecom-band optical switching in crystalline silicon microrings, a-Si:H exhibits substantially higher switching speeds due to reduced impact of free-carrier processes.

  7. Orientationally ordered ridge structures of aluminum films on hydrogen terminated silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Pantleon, Karen

    2006-01-01

    Films of aluminum deposited onto Si(100) substrates show a surface structure of parallel ridges. On films deposited on oxidized silicon substrates the direction of the ridges is arbitrary, but on films deposited on hydrogen-terminated Si(100) the ridges are oriented parallel to the ... > directions on the silicon substrate. The ridge structure appears when the film thickness is above 500 nm, and increasing the film thickness makes the structure more distinct. Anodic oxidation enhances the structure even further. X-ray diffraction indicates that grains in the film have mostly (110) facets...

  8. Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

    KAUST Repository

    Montes Muñoz, Enrique

    2017-01-24

    We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green\\'s function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.

  9. Effect of hydrogen annealing on characteristics of polycrystalline silicon

    Institute of Scientific and Technical Information of China (English)

    GOU Xianfang; XU Ying; LI Xudong; HENG Yang; MA Lifen; REN Bingyan

    2006-01-01

    The characteristics of mc-Si used for solar cells during H2 ambient annealing at 800-1200 ℃ were investigated by means of FTIR and QSSPCD. The results reveal that grain boundaries or defects in mc-Si may facilitate the formation of oxygen precipitates, and the formation of oxygen precipitates has deleterious effect on the lifetime of mc-Si. Decreasing lifetime could result from the formation of new recombination during annealing. Additionally, It is found that hydrogen may facilitate the formation of oxygen precipitates in mc-Si. On the other hand, the diffusion of hydrogen may passivate the defects/boundaries and it is beneficial to the lifetime of mc-Si.

  10. Origin of reverse annealing effect in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

    2009-01-01

    In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

  11. Organic silicon compounds anf hydrogen sulfide removal from biogas by mineral and adsorbent

    Science.gov (United States)

    Choi, J.

    2015-12-01

    Biogas utilized for energy production needs to be free from organic silicon compounds and hydrogen sulfide , as their burning has damaging effects on utilities and humans; organic silicon compounds and hydrogen sulfide can be found in biogas produced from biomass wastes, due to their massive industrial use in synthetic product,such as cosmetics, detergents and paints.Siloxanes and hydrogen sulfide removal from biogas can be carried out by various methods (Ajhar et al., 2010); aim of the present work is to find a single practical andeconomic way to drastically and simultaneously reduce both hydrogen sulfide and the siloxanes concentration to less than 1 ppm. Some commercial activated carbons previously selected (Monteleoneet al., 2011) as being effective in hydrogen sulfide up taking have been tested in an adsorption measurement apparatus, by flowing both hydrogen sulphide and volatile siloxane (Decamethycyclopentasiloxane or D5) in a nitrogen stream,typically 25-300 ppm D5 over N2, through an clay minerals, Fe oxides and Silica; the adsorption process was analyzed by varying some experimental parameters (concentration, grain size, bed height). The best silica shows an adsorption capacity of 0.2 g D5 per gram of silica. The next thermo gravimetric analysis (TGA) confirms the capacity data obtained experimentally by the breakthrough curve tests.The capacity results depend on D5 and hydrogen sulphide concentrations. A regenerative silica process is then carried out byheating the silica bed up to 200 ° C and flushing out the adsorbed D5 and hydrogen sulphide samples in a nitrogen stream in athree step heating procedure up to 200 ° C. The adsorption capacity is observed to degrade after cyclingthe samples through several adsorption-desorption cycles.

  12. Si-H bond dynamics in hydrogenated amorphous silicon

    Science.gov (United States)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  13. Modeling of nucleation and evolution of hydrogen-induced platelets in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Velichko, Oleg; Shaman, Yury [Belarusian State University of Informatics and Radioelectronics, Minsk (Belarus); Fedotov, Alexander [Belarusian State University, Minsk (Belarus)

    2009-08-15

    A model for nucleation and evolution of hydrogen induced platelets (HIPs) in silicon crystals during plasma treatment is proposed and analyzed. The derived equations allow one to trace the evolution of the concentration distribution for platelets depending on their size and to calculate the total concentration of hydrogen trapped by HIPs. The results of numerical simulation agree well with the available experimental data confirming the validity of the assumptions made to develop the model. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface

    Science.gov (United States)

    Labidi, Hatem; Koleini, Mohammad; Huff, Taleana; Salomons, Mark; Cloutier, Martin; Pitters, Jason; Wolkow, Robert A.

    2017-02-01

    The origin of bond-resolved atomic force microscope images remains controversial. Moreover, most work to date has involved planar, conjugated hydrocarbon molecules on a metal substrate thereby limiting knowledge of the generality of findings made about the imaging mechanism. Here we report the study of a very different sample; a hydrogen-terminated silicon surface. A procedure to obtain a passivated hydrogen-functionalized tip is defined and evolution of atomic force microscopy images at different tip elevations are shown. At relatively large tip-sample distances, the topmost atoms appear as distinct protrusions. However, on decreasing the tip-sample distance, features consistent with the silicon covalent bonds of the surface emerge. Using a density functional tight-binding-based method to simulate atomic force microscopy images, we reproduce the experimental results. The role of the tip flexibility and the nature of bonds and false bond-like features are discussed.

  15. Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface

    Science.gov (United States)

    Labidi, Hatem; Koleini, Mohammad; Huff, Taleana; Salomons, Mark; Cloutier, Martin; Pitters, Jason; Wolkow, Robert A.

    2017-01-01

    The origin of bond-resolved atomic force microscope images remains controversial. Moreover, most work to date has involved planar, conjugated hydrocarbon molecules on a metal substrate thereby limiting knowledge of the generality of findings made about the imaging mechanism. Here we report the study of a very different sample; a hydrogen-terminated silicon surface. A procedure to obtain a passivated hydrogen-functionalized tip is defined and evolution of atomic force microscopy images at different tip elevations are shown. At relatively large tip-sample distances, the topmost atoms appear as distinct protrusions. However, on decreasing the tip-sample distance, features consistent with the silicon covalent bonds of the surface emerge. Using a density functional tight-binding-based method to simulate atomic force microscopy images, we reproduce the experimental results. The role of the tip flexibility and the nature of bonds and false bond-like features are discussed. PMID:28194036

  16. Comprehensive analysis of passive generation of parabolic similaritons in tapered hydrogenated amorphous silicon photonic wires.

    Science.gov (United States)

    Mei, Chao; Li, Feng; Yuan, Jinhui; Kang, Zhe; Zhang, Xianting; Yan, Binbin; Sang, Xinzhu; Wu, Qiang; Zhou, Xian; Zhong, Kangping; Wang, Liang; Wang, Kuiru; Yu, Chongxiu; Wai, P K A

    2017-06-19

    Parabolic pulses have important applications in both basic and applied sciences, such as high power optical amplification, optical communications, all-optical signal processing, etc. The generation of parabolic similaritons in tapered hydrogenated amorphous silicon photonic wires at telecom (λ ~ 1550 nm) and mid-IR (λ ≥ 2100 nm) wavelengths is demonstrated and analyzed. The self-similar theory of parabolic pulse generation in passive waveguides with increasing nonlinearity is presented. A generalized nonlinear Schrödinger equation is used to describe the coupled dynamics of optical field in the tapered hydrogenated amorphous silicon photonic wires with either decreasing dispersion or increasing nonlinearity. The impacts of length dependent higher-order effects, linear and nonlinear losses including two-photon absorption, and photon-generated free carriers, on the pulse evolutions are characterized. Numerical simulations show that initial Gaussian pulses will evolve into the parabolic pulses in the waveguide taper designed.

  17. The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

    Science.gov (United States)

    Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

    2016-12-01

    Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

  18. Ultrafast optical control using the Kerr nonlinearity in hydrogenated amorphous silicon microcylindrical resonators

    Science.gov (United States)

    Vukovic, N.; Healy, N.; Suhailin, F. H.; Mehta, P.; Day, T. D.; Badding, J. V.; Peacock, A. C.

    2013-10-01

    Microresonators are ideal systems for probing nonlinear phenomena at low thresholds due to their small mode volumes and high quality (Q) factors. As such, they have found use both for fundamental studies of light-matter interactions as well as for applications in areas ranging from telecommunications to medicine. In particular, semiconductor-based resonators with large Kerr nonlinearities have great potential for high speed, low power all-optical processing. Here we present experiments to characterize the size of the Kerr induced resonance wavelength shifting in a hydrogenated amorphous silicon resonator and demonstrate its potential for ultrafast all-optical modulation and switching. Large wavelength shifts are observed for low pump powers due to the high nonlinearity of the amorphous silicon material and the strong mode confinement in the microcylindrical resonator. The threshold energy for switching is less than a picojoule, representing a significant step towards advantageous low power silicon-based photonic technologies.

  19. Improved stability of hydrogenated amorphous-silicon photosensitivity by ultraviolet illumination

    Science.gov (United States)

    Branz, Howard M.; Xu, Yueqin; Heck, Stephan; Gao, Wei

    2002-10-01

    Postdeposition ultraviolet (UV) illumination, followed by etching, improves the stability of hydrogenated amorphous-silicon thin films against subsequent light-induced degradation of photosensitivity. The etch removes a heavily damaged layer extending about 100 nm below the surface, but beneath the damage, the UV has improved the stability of 200 to 300 nm of bulk film. The open-circuit voltage of Schottky solar cells is also stabilized by UV-etch treatment. Possible mechanisms are discussed.

  20. Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys

    Science.gov (United States)

    Perrin, Jérôme; Takeda, Yoshihiko; Hirano, Naoto; Matsuura, Hideharu; Matsuda, Akihisa

    1989-01-01

    We report a systematic investigation of the effect of ion bombardment during the growth of amorphous silicon-germanium alloy films from silane and germane rf-glow discharge. Independent control of the plasma and the ion flux and energy is obtained by using a triode configuration. The ion contribution to the total deposition rate can reach 20% on negatively biased substrates. Although the Si and Ge composition of the film does not depend on the ion flux and energy, the optical, structural and electronic properties are drastically modified at low deposition temperatures when the maximum ion energy increases up to 50 eV, and remain constant above 50 eV. For a Ge atomic concentration of 37% and a temperature of 135°C, the optical gap decreases from 1.67 to 1.45 eV. This is correlated with a modification of hydrogen bonding configurations. Silicon dihydride sites disappear and preferential attachment of hydrogen to silicon is reduced in favour of germanium. Moreover the photoconductivity increases which shows that ion bombardment is a key parameter to optimize the quality of low band gap amorphous silicon-germanium alloys.

  1. Hydrogen desorption properties of magnesium hydride catalyzed multiply with carbon and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Klimkowicz, Alicja [AGH University of Science and Technology Faculty of Energy and Fuels, al. A. Mickiewicza 30, 30-059 Krakow (Poland); Shibaura Institute of Technology, Department of Engineering Science and Mechanics, 3-7-5 Toyosu, Koto-ku 135-8548, Tokyo (Japan); Takasaki, Akito, E-mail: takasaki@sic.shibaura-it.ac.jp [Shibaura Institute of Technology, Department of Engineering Science and Mechanics, 3-7-5 Toyosu, Koto-ku 135-8548, Tokyo (Japan); Gondek, Łukasz; Figiel, Henryk [AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. A. Mickiewicza 30, 30-059 Krakow (Poland); Świerczek, Konrad [AGH University of Science and Technology Faculty of Energy and Fuels, al. A. Mickiewicza 30, 30-059 Krakow (Poland)

    2015-10-05

    Highlights: • Crystal structure of 2 mol MgH{sub 2} + (1 − X) mol C + X mol Si (for X = 0, 0.25, 0.5, 0.75 and 1). • Enhanced hydrogen desorption properties. • Lowered temperature of hydrogen desorption for MgH{sub 2} with the multiple addition of C and Si. • Distribution of Si and C on MgH{sub 2} particles after mechanical milling. - Abstract: Magnesium hydride (MgH{sub 2}) is considered as one of hydrogen storage materials. However, the application is limited because of slow hydrogen kinetics and high thermodynamic stability. In this study, MgH{sub 2} powders were mechanically milled with graphite (C) and/or silicon (Si) powders, and effect of multiple addition of C and Si on hydrogen desorption properties was investigated. The multiple addition caused a decrease of the hydrogen desorption (onset and peak) temperatures more than single addition, and the lowest activation energy for hydrogen desorption, 62 kJ/mol, was obtained from sample powders of (2 mol MgH{sub 2} + 0.5 mol C + 0.5 mol Si). The surface of the sample powders after mechanical milling revealed a good distribution of C on the MgH{sub 2} surface and a presence of finer Si particles.

  2. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  3. A Hydrogen - Vacancy Defect In Single-Crystal Silicon

    Science.gov (United States)

    Melnikov, V. V.

    2016-09-01

    Results of a theoretical study of the interaction of interstitial molecular hydrogen with vacancies and the effect of generated defects on the structural and energy characteristics of the H2-Si system are considered. Within the framework of a 5D model it has been demonstrated that the decrease of system symmetry under transition to the crystal defect structure and the increase of the rotational barrier due to the strong interaction of the molecule with a vacancy lead to the significant restructuring of H2 energy spectrum. However, when the molecule is stable its rotational degrees of freedom remain active and H2 low-lying energy levels correspond to the definite values of the angular momentum.

  4. The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

    Science.gov (United States)

    Wen, Guozhi; Zeng, Xiangbin; Li, Xianghu

    2016-08-01

    Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 × 1012 cm-2 and 3.2 × 1012 cm-2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.

  5. Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides

    Science.gov (United States)

    Ay, F.; Aydinli, A.

    2004-06-01

    Silicon oxide, silicon nitride and silicon oxynitride layers were grown by a PECVD technique. The resulting refractive indices of the layers varied between 1.47 and 1.93. The compositional properties of the layers were analyzed by FTIR and ATR infrared spectroscopy techniques. Comparative investigation of bonding structures for the three different layers was performed. Special attention was given to analyze N-H bond stretching absorption at 3300-3400 cm -1. Quantitative results for hydrogen related bonding concentrations are presented based on IR analysis. An annealing study was performed in order to reduce or eliminate this bonding types. For the annealed samples the N-H bond concentration was strongly reduced as verified by FTIR transmittance and ATR spectroscopic methods. A correlation between the N-H concentration and absorption loss was verified for silicon oxynitride slab waveguides. Moreover, a single mode waveguide with silicon oxynitride core layer was fabricated. Its absorption and insertion loss values were determined by butt-coupling method, resulting in low loss waveguides.

  6. Dynamics of interstitial hydrogen molecules in crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Estreicher, S.K.; Wells, K. [Department of Physics, Texas Tech University, Lubbock, TX (United States); Fedders, P.A. [Department of Physics, Washington University, St. Louis, MO (United States); Ordejon, Pablo [Institut de Ciencia de Materiales de Barcelona, CSIC, Campus de la UAB, Bellaterra, Barcelona (Spain)

    2001-07-23

    The static and dynamic properties of interstitial H{sub 2}, HD and D{sub 2} molecules in crystalline silicon are obtained from ab initio molecular-dynamics simulations with atomic-like basis sets. The static (T=0) calculations agree with those of most other authors: the centre of mass (CM) of H{sub 2} is at the tetrahedral interstitial (T) site, the molecule is a nearly-free rotator, and the activation energy for diffusion is 0.90 eV. However, these results fail to explain a number of experimental observations, such as why H{sub 2} is infrared (IR) active, why the expected ortho/para splitting is not present, why the symmetry is C{sub 1}, why the piezospectroscopic tensors of H{sub 2} and D{sub 2} are identical or why the exposure to an H/D mix results in a single HD line which is not only at the wrong place but also much weaker than expected. In the present work, we extend the static calculations to include the constant-temperature dynamics for H{sub 2} in Si. At T>0 K, the CM of the molecule no longer remains at the T site. Instead, H{sub 2} 'bounces' off the walls of its tetrahedral cage and exchanges energy with the host crystal. The average position of the CM is away from the T site along <100>. Under uniaxial stress, the CM shifts off that axis and the molecule has C{sub 1} symmetry. The H-H stretch frequency calculated from the Fourier transform of the v-v autocorrelation function is close to the measured one. Since the potential energy experienced by H{sub 2} in Si near the T site is very flat, we argue that H{sub 2} should be a nearly free quantum mechanical rotator. Up to room temperature, only the j=0 and j=1 rotational states are occupied, H{sub 2} resembles a sphere rather than a dumbbell, the symmetry is determined by the position of the CM and HD is equivalent to DH in any symmetry. The rapid motion of the CM implies that an ortho-to-para transition will occur if a large magnetic moment is nearby. Several candidates are proposed. Since

  7. Tuning oxygen impurities and microstructure of nanocrystalline silicon photovoltaic materials through hydrogen dilution.

    Science.gov (United States)

    Wen, Chao; Xu, Hao; He, Wei; Li, Zhengping; Shen, Wenzhong

    2014-01-01

    As a great promising material for third-generation thin-film photovoltaic cells, hydrogenated nanocrystalline silicon (nc-Si:H) thin films have a complex mixed-phase structure, which determines its defectful nature and easy residing of oxygen impurities. We have performed a detailed investigation on the microstructure properties and oxygen impurities in the nc-Si:H thin films prepared under different hydrogen dilution ratio treatment by the plasma-enhanced chemical vapor deposition (PECVD) process. X-ray diffraction, transmission electron microscopy, Raman spectroscopy, and optical transmission spectroscopy have been utilized to fully characterize the microstructure properties of the nc-Si:H films. The oxygen and hydrogen contents have been obtained from infrared absorption spectroscopy. And the configuration state of oxygen impurities on the surface of the films has been confirmed by X-ray photoelectron spectroscopy, indicating that the films were well oxidized in the form of SiO2. The correlation between the hydrogen content and the volume fraction of grain boundaries derived from the Raman measurements shows that the majority of the incorporated hydrogen is localized inside the grain boundaries. Furthermore, with the detailed information on the bonding configurations acquired from the infrared absorption spectroscopy, a full explanation has been provided for the mechanism of the varying microstructure evolution and oxygen impurities based on the two models of ion bombardment effect and hydrogen-induced annealing effect.

  8. Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

    Science.gov (United States)

    Kim, K. H.; Johnson, E. V.; Abramov, A.; Cabarrocas, P. Roca i.

    2012-07-01

    We report on light-induced electrical and macroscopic changes in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells. To explain the particular light-soaking behavior of such cells - namely an increase of the open circuit voltage (Voc) and a rapid drop of the short circuit current density (Jsc) - we correlate these effects to changes in hydrogen incorporation and structural properties in the layers of the cells. Numerous techniques such as current-voltage characteristics, infrared spectroscopy, hydrogen exodiffusion, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and spectroscopic ellipsometry are used to study the light-induced changes from microscopic to macroscopic scales (up to tens of microns). Such comprehensive use of complementary techniques lead us to suggest that light-soaking produces the diffusion of molecular hydrogen, hydrogen accumulation at p-layer/substrate interface and localized delamination of the interface. Based on these results we propose that light-induced degradation of PIN solar cells has to be addressed from not only as a material issue, but also a device point of view. In particular we bring experimental evidence that localized delamination at the interface between the p-layer and SnO2 substrate by light-induced hydrogen motion causes the rapid drop of Jsc.

  9. Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Roca i Cabarrocas P.

    2012-07-01

    Full Text Available We report on light-induced electrical and macroscopic changes in hydrogenated polymorphous silicon (pm-Si:H PIN solar cells. To explain the particular light-soaking behavior of such cells – namely an increase of the open circuit voltage (Voc and a rapid drop of the short circuit current density (Jsc – we correlate these effects to changes in hydrogen incorporation and structural properties in the layers of the cells. Numerous techniques such as current-voltage characteristics, infrared spectroscopy, hydrogen exodiffusion, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and spectroscopic ellipsometry are used to study the light-induced changes from microscopic to macroscopic scales (up to tens of microns. Such comprehensive use of complementary techniques lead us to suggest that light-soaking produces the diffusion of molecular hydrogen, hydrogen accumulation at p-layer/substrate interface and localized delamination of the interface. Based on these results we propose that light-induced degradation of PIN solar cells has to be addressed from not only as a material issue, but also a device point of view. In particular we bring experimental evidence that localized delamination at the interface between the p-layer and SnO2 substrate by light-induced hydrogen motion causes the rapid drop of Jsc.

  10. Enhanced physical properties of porous silicon for improved hydrogen gas sensing

    Science.gov (United States)

    Naderi, N.; Hashim, M. R.; Amran, T. S. T.

    2012-05-01

    In the current communication, porous silicon samples were prepared by pulsed photoelectrochemical etching using a hydrofluoric acid-based solution. The structural and gas-sensing properties of the samples were studied. Apart from the cycle time T and pause time Toff of the pulsed current, a novel parameter, in the shape of the current named 'delay time Td' was introduced. Our results showed that by optimization of delay time, the porosity of samples can be controlled due to the chemical preparation of silicon surface prior to electrochemical anodization. The fourier-transform infrared measurements of porous silicon (PS) layers on Si substrate showed that the typical PS surface was characterized by chemical species like Si-H and Si-O-Si terminations. The two-minute delay before applying electrical current was considered sufficient for the fabrication of higher porosity (83%), more uniform, and more stable structures. The photoluminescence (PL) peak of the optimized sample showed higher intensity than the other samples. An obvious PL blue shift also revealed a change in the crystallographic characteristics of silicon due to quantum confinement effects. Metal-semiconductor-metal diodes with Schottky contacts of nickel were fabricated on PS samples and the potential application of optimized substrates for the improved sensitivity, stability, response time and recovery time of hydrogen gas sensors was subsequently studied.

  11. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.

    Science.gov (United States)

    Kim, Jiwoong; Jang, Kyungsoo; Phu, Nguyen Thi Cam; Trinh, Thanh Thuy; Raja, Jayapal; Kim, Taeyong; Cho, Jaehyun; Kim, Sangho; Park, Jinjoo; Jung, Junhee; Lee, Youn-Jung; Yi, Junsin

    2016-05-01

    Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content.

  12. Evidence for an iron-hydrogen complex in p-type silicon

    Science.gov (United States)

    Leonard, S.; Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-01

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10-17 cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  13. Silicon carbide recovered from photovoltaic industry waste as photocatalysts for hydrogen production.

    Science.gov (United States)

    Zhang, Yu; Hu, Yu; Zeng, Hongmei; Zhong, Lin; Liu, Kewei; Cao, Hongmei; Li, Wei; Yan, Hongjian

    2017-05-05

    In recent years, the focus on creating a dependable and efficient means to recycle or recover the valuable parts from the waste material has drawn significantly attention as an environmentally friendly way to deal with the industrial wastes. The silicon carbide (SiC) crystalline is one of reusable material in the slurry wastes generated during wafer slicing. Here we report the use of recovered SiC from the slurry wastes as photocatalysts to produce hydrogen in the presence of Na2SO3-Na2S as electron donor. The recovered SiC were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy spectra (XPS), UV-vis (UV-vis) spectroscopy, and photoluminescence (PL) spectroscopy. The morphology of SiC loaded with 1wt% Pt as cocatalyst by thermal-reduction method was observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (TEM). The experimental results reveal that the recovered SiC is mainly consist of 3C-SiC, 6H-SiC and some silicon oxycarbides on the surface of the SiC. The highest hydrogen production rate is 191.8μmolh(-1)g(-1). This study provides a way to recycle crystalline SiC from the discharged waste in the photovoltaic industry and reuse it as photocatalyst to yield hydrogen with the advantage of low energy consumption, low pollution and easy operation. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. The Effects of Hydrogen on the Potential-Energy Surface of Amorphous Silicon

    Science.gov (United States)

    Joly, Jean-Francois; Mousseau, Normand

    2012-02-01

    Hydrogenated amorphous silicon (a-Si:H) is an important semiconducting material used in many applications from solar cells to transistors. In 2010, Houssem et al. [1], using the open-ended saddle-point search method, ART nouveau, studied the characteristics of the potential energy landscape of a-Si as a function of relaxation. Here, we extend this study and follow the impact of hydrogen doping on the same a-Si models as a function of doping level. Hydrogen atoms are first attached to dangling bonds, then are positioned to relieve strained bonds of fivefold coordinated silicon atoms. Once these sites are saturated, further doping is achieved with a Monte-Carlo bond switching method that preserves coordination and reduces stress [2]. Bonded interactions are described with a modified Stillinger-Weber potential and non-bonded Si-H and H-H interactions with an adapted Slater-Buckingham potential. Large series of ART nouveau searches are initiated on each model, resulting in an extended catalogue of events that characterize the evolution of potential energy surface as a function of H-doping. [4pt] [1] Houssem et al., Phys Rev. Lett., 105, 045503 (2010)[0pt] [2] Mousseau et al., Phys Rev. B, 41, 3702 (1990)

  15. Synchrotron radiation photoemission study of metal overlayers on hydrogenated amorphous silicon at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Pi, J.

    1990-09-21

    In this dissertation, metals deposited on a hydrogenated amorphous silicon (a-Si:H) film at room temperature are studied. The purpose of this work is mainly understanding the electronic properties of the interface, using high-resolution synchrotron radiation photoemission techniques as a probe. Atomic hydrogen plays an important role in passivating dangling bonds of a-Si:H films, thus reducing the gap-state distribution. In addition, singly bonded hydrogen also reduces states at the top of the valence band which are now replaced by deeper Si-H bonding states. The interface is formed by evaporating metal on an a-Si:H film in successive accumulations at room temperature. Au, Ag, and Cr were chosen as the deposited metals. Undoped films were used as substrates. Since some unique features can be found in a-Si:H, such as surface enrichment of hydrogen diffused from the bulk and instability of the free surface, we do not expect the metals/a-Si:H interface to behave exactly as its crystalline counterpart. Metal deposits, at low coverages, are found to gather preferentially around regions deficient in hydrogen. As the thickness is increased, some Si atoms in those regions are likely to leave their sites to intermix with metal overlayers like Au and Cr. 129 refs., 30 figs.

  16. Using silicon diodes for detecting the liquid-vapor interface in hydrogen

    Science.gov (United States)

    Dempsey, Paula J.; Fabik, Richard H.

    1992-01-01

    Tests were performed using commercially available silicon diode temperature sensors to detect the location of the liquid-vapor interface in hydrogen during ground test programs. Results show that by increasing the current into the sensor, silicon diodes can be used as liquid level point sensors. After cycling the sensors from liquid to vapor several times, it was found that with a 30 mA (milliamps) input current, the sensors respond within 2 seconds by measuring a large voltage difference when transitioning from liquid to vapor across the interface. Nearly instantaneous response resulted during a transition from vapor to liquid. Detailed here are test procedures, experimental results, and guidelines for applying this information to other test facilities.

  17. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy

    Science.gov (United States)

    Grunthaner, P. J.; Grunthaner, F. J.; Fathauer, R. W.; Lin, T. L.; Hecht, M. H.; Bell, L. D.; Kaiser, W. J.

    1989-01-01

    The preparation of hydrogen-terminated silicon surfaces for use as starting substrates for low-temperature MBE growth is examined in detail. The procedure involves the ex situ removal under nitrogen of residual oxide from a silicon substrate using a spin-clean with HF in ethanol, followed by the in situ low-temperature desorption (150 C) of physisorbed etch residues. The critical steps and the chemical basis for these steps are examined using X-ray photoelectron spectroscopy. Impurity residues at the epilayer-substrate interface following subsequent homoepitaxial growth are studied using AES, SIMS and TEM. Finally, scanning tunneling microscopy is used to examine the effect of cleaning methods on substrate morphology.

  18. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    quality, etch rate. The response of these parameters to high temperature anneals were correlated with structural changes in the silicon nitride films as measured by using the hydrogen bond concentration. Plasma enhanced chemical vapour deposition allows continuous variation in nearly all deposition parameters. The parameters studied in this work are the gas flow ratios and excitation power. In both direct and remote deposition systems, the increase in deposition power density lead to higher activation of ammonia which in turn lead to augmented incorporation of nitrogen into the films and thus lower refractive index. For a direct system, the same parameter change lead to a drastic fall in passivation quality of Czochralski silicon attributed to an increase in ion bombardment as well as the general observation that as deposited passivation tends to increase with refractive index. Silicon nitride films with variations in refractive index were also made by varying the silane-to-ammonia gas flow ratio. This simple parameter adjustment makes plasma enhanced chemical vapour deposited silicon nitride applicable to double layer anti-reflective coatings simulated in this work. The films were found to have an etch rate in 5% hydrofluoric acid that decreased with increasing refractive index. This behaviour is attributed to the decreasing concentration of nitrogen-to-hydrogen bonds in the films. Such bonds at the surface of silicon nitride have been suggested to be involved in the main reaction mechanism when etching silicon nitride in hydrofluoric acid. Annealing the films lead to a drastic fall in etch rates and was linked to the release of hydrogen from the nitrogen-hydrogen bonds. (author). 115 refs., 35 figs., 6 tabs

  19. Silicon carbide recovered from photovoltaic industry waste as photocatalysts for hydrogen production

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu [College of Chemical Engineering, Sichuan University, Chengdu, 610064 (China); Hu, Yu [College of Material Science and Enginneering, Sichuan University, Chengdu, 610064 (China); Zeng, Hongmei [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Zhong, Lin, E-mail: zhonglin@scu.edu.cn [College of Chemical Engineering, Sichuan University, Chengdu, 610064 (China); Liu, Kewei; Cao, Hongmei [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Li, Wei [College of Material Science and Enginneering, Sichuan University, Chengdu, 610064 (China); Yan, Hongjian, E-mail: hjyan@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China)

    2017-05-05

    Highlights: • SiC was recovered from photovoltaic industry waste. • The recovered SiC is mainly consist of 3C-SiC, 6H-SiC and some silicon oxycarbides. • The recovered SiC shows photocatalytic H{sub 2} evolution from water. - Abstract: In recent years, the focus on creating a dependable and efficient means to recycle or recover the valuable parts from the waste material has drawn significantly attention as an environmentally friendly way to deal with the industrial wastes. The silicon carbide (SiC) crystalline is one of reusable material in the slurry wastes generated during wafer slicing. Here we report the use of recovered SiC from the slurry wastes as photocatalysts to produce hydrogen in the presence of Na{sub 2}SO{sub 3}-Na{sub 2}S as electron donor. The recovered SiC were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy spectra (XPS), UV–vis (UV–vis) spectroscopy, and photoluminescence (PL) spectroscopy. The morphology of SiC loaded with 1 wt% Pt as cocatalyst by thermal-reduction method was observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (TEM). The experimental results reveal that the recovered SiC is mainly consist of 3C-SiC, 6H-SiC and some silicon oxycarbides on the surface of the SiC. The highest hydrogen production rate is 191.8 μmol h{sup −1} g{sup −1}. This study provides a way to recycle crystalline SiC from the discharged waste in the photovoltaic industry and reuse it as photocatalyst to yield hydrogen with the advantage of low energy consumption, low pollution and easy operation.

  20. Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides

    DEFF Research Database (Denmark)

    Kuyken, B.; Ji, Hua; Clemmen, S.

    2011-01-01

    We propose hydrogenated amorphous silicon nanowires as a platform for nonlinear optics in the telecommunication wavelength range. Extraction of the nonlinear parameter of these photonic nanowires reveals a figure of merit larger than 2. It is observed that the nonlinear optical properties...... of these waveguides degrade with time, but that this degradation can be reversed by annealing the samples. A four wave mixing conversion efficiency of + 12 dB is demonstrated in a 320 Gbit/s serial optical waveform data sampling experiment in a 4 mm long photonic nanowire....

  1. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    Science.gov (United States)

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  2. Hydrogen sensitive gas sensor based on porous silicon/TiO{sub 2-x} structure

    Energy Technology Data Exchange (ETDEWEB)

    Arakelyan, V.M.; Galstyan, V.E.; Martirosyan, Kh.S.; Shahnazaryan, G.E.; Aroutiounian, V.M. [Yerevan State Univ, Dept Phys Semicond and Microelect, Yerevan 0025, (Armenia); Soukiassian, P.G. [CEA, DSM, DRECAM, SPCSI, Lab SIMA, F-91191 Gif Sur Yvette, (France); Soukiassian, P.G. [Univ Paris 11, Dept Phys, F-91405 Orsay, (France)

    2007-07-01

    Porous silicon (PS) layer was formed by electrochemical anodization on a p-type Si surface. Thereafter, n-type TiO{sub 2-x} thin film was deposited onto the PS surface by electron-beam evaporation. Pt catalytic layer and Au electrical contacts for further measurements were deposited onto the PS/TiO{sub 2-x} structure by ion-beam sputtering. Current-voltage characteristic, sensitivity to different concentration of hydrogen and resistance change of obtained structures versus time were examined. Results of measurements have shown that the current-voltage characteristics of structures are similar to that of diode. High sensitivity to hydrogen of obtained structures was also detected. Note that all measurements were carried out at room temperature. (authors)

  3. Hydrogen Content and Porosity Behavior of Hypereutectic Aluminum-silicon Alloy with Phosphorus

    Institute of Scientific and Technical Information of China (English)

    HU Li-na; BIAN Xiu-fang; DUAN You-feng

    2004-01-01

    By making castings that pick up gas from moisture in red sand molds,the porosity generated at different cooling rates was discussed during solidification of hypereutectic Al-25%Si alloy without and with phosphorus additions. The effect of phosphorus addition on hydrogen content in the melt was also studied. It was observed that the phosphorus addition made hydrogen content in alloy melts present a "see-saw" tendency.In addition to primary silicon refinement,the phosphorus promoted gas porosity formed not only in slowly cooled sections, but also in rapidly cooled sections. There was a small difference in density of full dense sample between P-refined and unrefined castings, with a larger density associated with phosphorous addition. The change of the surface tension seemed more reasonable to explain the mechanism of porosity behavior.

  4. High hydrogen dilution and low substrate temperature cause columnar growth of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Bronsveld, Paula C.P.; Rath, Jatindra K.; Schropp, Ruud E.I. [Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, Utrecht University, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Mates, Tomas; Fejfar, Antonin; Kocka, Jan [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Praha 6 (Czech Republic)

    2010-03-15

    Columnar growth was observed in the amorphous part of mixed phase layers deposited at very low substrate temperatures. The width of the columns and the layer thickness at which they are first distinguishable in a cross-sectional transmission electron microscope (X-TEM) image, about 120 nm, is similar for the substrate temperature range of 40-100 C, but the columns are less well developed when either the substrate temperature is increased or the dilution ratio is lowered. This growth behaviour and the incubation layer are attributed to hydrogen-induced surface diffusion of growth precursors resulting in an amorphous-amorphous roughness transition. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  5. Complexes associated with silicon and hydrogen in the neutralization mechanism of active donors in hydrogenated GaAs: Si(n)

    Energy Technology Data Exchange (ETDEWEB)

    Chevallier, J.; Jalil, A.; Pesant, J.C.; Mostefaoui, R.; Pajot, B.; Murawala, P.; Azoulay, R.

    1987-08-01

    After hydrogen plasma exposure of a n type GaAs:Si crystal, we observe a decrease of the free carrier concentration and a hydrogen diffusion in the near surface region of the material. In bulk crystals, a good correlation has been established between the hydrogen penetration depth and the depth where the free carrier concentration recovers its bulk value. The decrease of the carrier concentration is accompanied by a significant increase of the electron mobility. This increase reveals a neutralization of the active donors and their transformation into electrically neutral complexes. A detailed infrared spectroscopy study on plasma exposed GaAs:Si epilayers shows a very sharp absorption line at 890 cm/sup -1/ on hydrogenated samples and 637 cm/sup -1/ on deuterated samples. These bands are totally absent in hydrogenated undoped GaAs. The isotopic shift frequency analysis indicates that the 890 cm/sup -1/ line could be associated with an arsenic-hydrogen bond where arsenic is supposed to sit as a first nearest neighbour of a silicon donor. Isochronal annealing experiments show a good correlation between the 890 cm/sup -1/ absorption band intensity and the neutralized silicon donor concentration. The neutralization would be due to the formation of (SiAs/sub 3/) As-H complexes, the extra electron of the silicon donor being trapped in order to participate to the As-H bond.

  6. Raman scattering study on hydrogen-induced defects in silicon used in the ion-cut process

    Energy Technology Data Exchange (ETDEWEB)

    Socher, S.; Lavrov, E.V.; Weber, J. [Technische Universitaet Dresden, 01062 Dresden (Germany)

    2012-10-15

    Ion implantation is a widely used technique in the fabrication of semiconductor devices. We present a Raman scattering study of single crystalline silicon implanted with {sup 28}Si ions and subsequently treated in a hydrogen plasma. This treatment generates hydrogen molecules with a Raman signal at 3830 cm{sup -1}. The same band is detected in hydrogen implanted silicon employed in the ion-cut technology. The band reveals a substructure, which is assigned to the ro-vibrational transitions of H{sub 2} trapped at three different sites of the silicon lattice. The H{sub 2} signals are shown to correlate with the Si-H vibrational modes at 1888, 1930 and 1964 cm{sup -1} which indicates the interstitial-type nature of the traps for the molecules. The properties of the traps are discussed. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    GUO Yu; ZHANG Xiwen; HAN Gaorong

    2007-01-01

    Hydrogenated amorphous silicon (a-Si:H) films were deposited on Si (100) and glass substrates by dielectric barrier discharge enhanced chemical vapour deposition (DBD-CVD)in (SiH4+H2) atmosphere at room temperature.Results of the thickness measurement,SEM (scanning electron microscope),Raman,and FTIR (Fourier transform infrared spectroscopy) show that with the increase in the applied peak voltage,the deposition rate and network order of the films increase,and the hydrogen bonding configurations mainly in di-hydrogen (Si-H2) and poly hydrogen (SiH2)n are introduced into the films.The UV-visible transmission spectra show that with the decrease in Sill4/ (SiH4+H2) the thin films'band gap shifts from 1.92 eV to 2.17 eV.These experimental results are in agreement with the theoretic analysis of the DBD discharge.The deposition of a-Si:H films by the DBD-CVD method as reported here for the first time is attractive because it allows fast deposition of a-Si:H films on large-area low-melting-point substrates and requires only a low cost of production without additional heating or pumping equipment.

  8. Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

    Directory of Open Access Journals (Sweden)

    V. S. Waman

    2011-01-01

    Full Text Available Hydrogenated nanocrystalline silicon films were prepared by hot-wire method at low substrate temperature (200∘C without hydrogen dilution of silane (SiH4. A variety of techniques, including Raman spectroscopy, low angle X-ray diffraction (XRD, Fourier transform infrared (FTIR spectroscopy, atomic force microscopy (AFM, and UV-visible (UV-Vis spectroscopy, were used to characterize these films for structural and optical properties. Films are grown at reasonably high deposition rates (>15 Å/s, which are very much appreciated for the fabrication of cost effective devices. Different crystalline fractions (from 2.5% to 63% and crystallite size (3.6–6.0 nm can be achieved by controlling the process pressure. It is observed that with increase in process pressure, the hydrogen bonding in the films shifts from Si–H to Si–H2 and (Si–H2n complexes. The band gaps of the films are found in the range 1.83–2.11 eV, whereas the hydrogen content remains <9 at.% over the entire range of process pressure studied. The ease of depositing films with tunable band gap is useful for fabrication of tandem solar cells. A correlation between structural and optical properties has been found and discussed in detail.

  9. Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

    NARCIS (Netherlands)

    Ponomarev, M. V.; Sharma, K.; Verheijen, M. A.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Plasma-deposited aluminum-doped ZnO (ZnO:Al) demonstrated a resistivity gradient as function of the film thickness, extending up to about 600 nm. This gradient decreased sharply when the ZnO:Al was capped by a hydrogenated amorphous silicon layer (a-Si:H) and subsequently treated according to the so

  10. Band offsets at the crystalline / hydrogenated amorphous silicon interface from first-principles

    Science.gov (United States)

    Hazrati, Ebrahim; Jarolimek, Karol; de Wijs, Gilles A.; InstituteMolecules; Materials Team

    2015-03-01

    The heterojunction formed between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H) is a key component of a new type of high-efficiency silicon solar cell. Since a-Si:H has a larger band gap than c-Si, band offsets are formed at the interface. A band offset at the minority carrier band will mitigate recombination and lead to an increased efficiency. Experimental values of band offsets scatter in a broad range. However, a recent meta-analysis of the results (W. van Sark et al.pp. 405, Springer 2012) gives a larger valence offset (0.40 eV) than the conduction offset (0.15 eV). In light of the conflicting reports our goal is to calculate the band offsets at the c-Si/a-Si:H interface from first-principles. We have prepared several atomistic models of the interface. The crystalline part is terminated with (111) surfaces on both sides. The amorphous structure is generated by simulating an annealing process at 1100 K, with DFT molecular dynamics. Once the atomistic is ready it can be used to calculate the electronic structure of the interface. Our preliminary results show that the valence offset is larger than the conduction band offset.

  11. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    Science.gov (United States)

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  12. Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Laxmi Karki Gautam

    2016-02-01

    Full Text Available Optimization of thin film photovoltaics (PV relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in the full hydrogenated amorphous silicon (a-Si:H PV device configuration. The nucleation and evolution of crystallites forming from the amorphous phase were studied using in situ near-infrared to ultraviolet spectroscopic ellipsometry during growth of films prepared as a function of hydrogen to reactive gas flow ratio R = [H2]/[SiH4]. In conjunction with higher photon energy measurements, the presence and relative absorption strength of silicon-hydrogen infrared modes were measured by infrared extended ellipsometry measurements to gain insight into chemical bonding. Structural and optical models have been developed for the back reflector (BR structure consisting of sputtered undoped zinc oxide (ZnO on top of silver (Ag coated glass substrates. Characterization of the free-carrier absorption properties in Ag and the ZnO + Ag interface as well as phonon modes in ZnO were also studied by spectroscopic ellipsometry. Measurements ranging from 0.04 to 5 eV were used to extract layer thicknesses, composition, and optical response in the form of complex dielectric function spectra (ε = ε1 + iε2 for Ag, ZnO, the ZnO + Ag interface, and undoped a-Si:H layer in a substrate n-i-p a-Si:H based PV device structure.

  13. Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions

    Science.gov (United States)

    Maslova, O. A.; Alvarez, J.; Gushina, E. V.; Favre, W.; Gueunier-Farret, M. E.; Gudovskikh, A. S.; Ankudinov, A. V.; Terukov, E. I.; Kleider, J. P.

    2010-12-01

    Heterojunctions made of hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) are examined by conducting probe atomic force microscopy. Conductive channels at both (n )a-Si:H/(p)c-Si and (p)a-Si:H/(n)c-Si interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the c-Si surface in agreement with previous planar conductance measurements. The presence of a hole gas in (p )a-Si:H/(n)c-Si structures implies a quite large valence band offset (EVc-Si-EVa-Si:H>0.25 eV).

  14. Solar Hydrogen Production by Amorphous Silicon Photocathodes Coated with a Magnetron Sputter Deposited Mo2C Catalyst.

    Science.gov (United States)

    Morales-Guio, Carlos G; Thorwarth, Kerstin; Niesen, Bjoern; Liardet, Laurent; Patscheider, Jörg; Ballif, Christophe; Hu, Xile

    2015-06-10

    Coupling of Earth-abundant hydrogen evolution catalysts to photoabsorbers is crucial for the production of hydrogen fuel using sunlight. In this work, we demonstrate the use of magnetron sputtering to deposit Mo2C as an efficient hydrogen evolution reaction catalyst onto surface-protected amorphous silicon (a-Si) photoabsorbers. The a-Si/Mo2C photocathode evolves hydrogen under simulated solar illumination in strongly acidic and alkaline electrolytes. Onsets of photocurrents are observed at potentials as positive as 0.85 V vs RHE. Under AM 1.5G (1 sun) illumination, the photocathodes reach current densities of -11.2 mA cm(-2) at the reversible hydrogen potential in 0.1 M H2SO4 and 1.0 M KOH. The high photovoltage and low-cost of the Mo2C/a-Si assembly make it a promising photocathode for solar hydrogen production.

  15. Surface chemistry of the preferred (111) and (220) crystal oriented microcrystalline Si films by radio-frequency plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ohba, Daisuke; Koshino, Hideto; Tang, Zeguo; Shirai, Hajime [Graduate School of Science and Engineering, Saitama University, Sakura (Japan)

    2011-10-15

    The surface chemistry of the preferentially (111) and (220) crystal orientated chlorinated hydrogenated microcrystalline silicon ({mu}c-Si:H:Cl) films was studied using a rf PE-CVD of a dichlorosilane (SiH{sub 2}Cl{sub 2}) and H{sub 2} mixture. The growing surface for the preferentially (220) crystal oriented {mu}c-Si:H:Cl films included much voids and dangling bonds, whereas the growing surface with the preferential (111) crystal orientation was chemically stable relatively. These findings suggest that the sticking process of deposition precursors and/or the reconstruction of Si clusters within the sub-surface determine the preferential crystal orientation. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Tips and tricks to recognize microcrystalline arthritis

    National Research Council Canada - National Science Library

    Filippucci, Emilio; Di Geso, Luca; Grassi, Walter

    2012-01-01

    .... The knowledge of some tips and tricks in the identification of these findings can play a key role in exploiting the relevant potential of US in microcrystalline arthritis, avoiding errors and misinterpretations...

  17. On the effect of the underlying ZnO:Al layer on the crystallization kinetics of hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Sharma, K.; Ponomarev, M. V.; M. C. M. van de Sanden,; Creatore, M.

    2013-01-01

    In this contribution, we analyze the thickness effect of the underlying aluminum doped-zinc oxide (ZnO:Al) layers on the structural properties and crystallization kinetics of hydrogenated amorphous silicon (a-Si:H) thin films. It is shown that the disorder in as-deposited a-Si:H films, as probed by

  18. An Improved Method for the Preparation of Organic Monolayers of 1-Alkenes on Hydrogen-Terminated Silicon Surfaces

    NARCIS (Netherlands)

    Sieval, A.B.; Vleeming, V.; Zuilhof, H.; Sudhölter, E.J.R.

    1999-01-01

    The possibility to use dilute alkene solutions for the formation of alkene monolayers with 1-hexadecene on a hydrogen-terminated silicon(100) surface has been investigated for a variety of solvents. The resulting monolayers were analyzed by water contact angles. Anisole, n-butylbenzene, and n-decane

  19. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium

    NARCIS (Netherlands)

    Jobson, K.W.; Wells, J.P.R.; Schropp, R.E.I.; Vinh, N.Q.; Dijkhuis, J.I.

    2008-01-01

    We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si–H and Ge–H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe:H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to th

  20. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium

    NARCIS (Netherlands)

    Jobson, K. W.; Wells, J. P. R.; Schropp, R. E. I.; Vinh, N. Q.; Dijkhuis, J. I.

    2008-01-01

    We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si-H and Ge-H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe: H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to t

  1. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  2. Tips and tricks to recognize microcrystalline arthritis.

    Science.gov (United States)

    Filippucci, Emilio; Di Geso, Luca; Grassi, Walter

    2012-12-01

    US plays a useful role in diagnosing and monitoring therapy in microcrystalline arthritis, as it may detect both monosodium urate and calcium pyrophosphate crystal aggregates. The knowledge of some tips and tricks in the identification of these findings can play a key role in exploiting the relevant potential of US in microcrystalline arthritis, avoiding errors and misinterpretations. This review provides an in-depth description of simple technical and methodological issues to guide the rheumatologist in daily clinical practice.

  3. Room Temperature Reactivity Of Silicon Nanocrystals With Solvents: The Case Of Ketone And Hydrogen Production From Secondary Alcohols: Catalysis?

    KAUST Repository

    El Demellawi, Jehad K.

    2015-05-29

    Although silicon nanoparticles dispersed in liquids are used in various applications ranging from bio-labeling to hydrogen production, their reactivities with their solvents and their catalytic properties re-main still unexplored. Here, we discovered that, because of their surface structures and mechanical strain, silicon nanoparticles react strongly with their solvents and may act as catalysts for the dehydrogenation, at room temperature, of secondary alcohols (e.g. isopropanol) to ketones and hydrogen. This catalytic reaction was followed by gas chromatography, pH measurements, mass spectroscopy and solidstate NMR. This discovery provides new understanding of the role played by silicon nanoparticles, and nanosilicon in general, in their stability in solvents in general as well as being candidates in catalysis.

  4. Modelling of the hydrogen effects on the morphogenesis of hydrogenated silicon nano-structures in a plasma reactor; Modelisation des effets de l'hydrogene sur la morphogenese des nanostructures de silicium hydrogene dans un reacteur plasma

    Energy Technology Data Exchange (ETDEWEB)

    Brulin, Q

    2006-01-15

    This work pursues the goal of understanding mechanisms related to the morphogenesis of hydrogenated silicon nano-structures in a plasma reactor through modeling techniques. Current technologies are first reviewed with an aim to understand the purpose behind their development. Then follows a summary of the possible studies which are useful in this particular context. The various techniques which make it possible to simulate the trajectories of atoms by molecular dynamics are discussed. The quantum methods of calculation of the interaction potential between chemical species are then developed, reaching the conclusion that only semi-empirical quantum methods are sufficiently fast to be able to implement an algorithm of quantum molecular dynamics on a reasonable timescale. From the tools introduced, a reflection on the nature of molecular metastable energetic states is presented for the theoretical case of the self-organized growth of a linear chain of atoms. This model - which consists of propagating the growth of a chain by the successive addition of the atom which least increases the electronic energy of the chain - shows that the Fermi level is a parameter essential to self organization during growth. This model also shows that the structure formed is not necessarily a total minimum energy structure. From all these numerical tools, the molecular growth of clusters can be simulated by using parameters from magnetohydrodynamic calculation results of plasma reactor modeling (concentrations of the species, interval between chemical reactions, energy of impact of the reagents...). The formation of silicon-hydrogen clusters is thus simulated by the successive capture of silane molecules. The structures formed in simulation at the operating temperatures of the plasma reactor predict the formation of spherical clusters constituting an amorphous silicon core covered by hydrogen. These structures are thus not in a state of minimum energy, contrary to certain experimental

  5. Photoelectronic properties of hydrogenated amorphous silicon films deposited by R. F sputtering and glow discharge methods

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Rahman, M.; Madkour, H. (Faculty of Science, Aswan (Egypt)); Hassan, H.H.; El-Desouki, S. (Cairo Univ., Giza (Egypt))

    1989-09-01

    Hydrogenated amorphous silicon films a-Si:H were deposited by both R.F. sputtering in a planar magnetron configuration and glow discharge methods on Corning glass substrates at different substrate temperatures. The dc and ac photoconductivities of the deposited films were extensively studied as a function of temperature, photon energy and photo-excitation intensity. The results showed that, the dark and photoconductivities have different dependency regions on temperature with different activation energies in the range of 0.08-0.20 eV. It has been also found that the photoconductivity is influenced by the method of deposition and the deposition parameters, indicating that the density of gap states is sensitive to the deposition conditions. The photoconductivity ({sigma}{sub ph}) has a power dependence on the illumination intensity (I) of the form {sigma}{sub ph} {alpha} I {sup {nu}}, where {nu} is a constant and was found also to be increase with temperature.

  6. Research on the optimum hydrogenated silicon thin films for application in solar cells

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170 ℃. The electrical,structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current-voltage (Ⅰ - Ⅴ) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance.

  7. Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Li Zhi-Gang; Long Shi-Bing; Liu Ming; Wang Cong-Shun; Jia Rui; Lv Jin; Shi Yi

    2007-01-01

    The early stages of hydrogenated nanocrystalline silicon (nc-Si:H) films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy.To increase the density of nanocrystals in the nc-Si:H films,the films were annealed by rapid thermal annealing (RTA) at different temperatures and then analysed by Raman spectroscopy.It Was found that the recrystallization process of the film Was optimal at around 1000℃.The effects of different RTA conditions on charge storage were characterized by capacitance-voltage measurement.Experimental results show that nc-Si:H films obtained by RTA have good charge storage characteristics for nonvolatile memory.

  8. Shallow bistable non-effective-mass-like donors in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Tokmoldin, S.Zh. [Institute of Physics and Technology, Ibragimov Street 11, Almaty 050032 (Kazakhstan)]. E-mail: serik@sci.kz; Issova, A.T. [Institute of Physics and Technology, Ibragimov Street 11, Almaty 050032 (Kazakhstan); Abdullin, Kh.A. [Institute of Physics and Technology, Ibragimov Street 11, Almaty 050032 (Kazakhstan); Mukashev, B.N. [Institute of Physics and Technology, Ibragimov Street 11, Almaty 050032 (Kazakhstan)

    2006-04-01

    Infrared absorption of float-zone-refined silicon crystals implanted with protons and annealed at 450 deg. C has been investigated in the range 150-1800 cm{sup -1}. Along with the presence of well-known prominent bands related to higher-order electronic transitions of intrinsic defects at 700-1200 cm{sup -1} and wagging vibrations of Si-H bonds in 600-800 cm{sup -1} range, four effective-mass-like donors with binding energies in the range 32.6-38.7 meV and dominating sharp absorption peaks at 309, 373 and 444 cm{sup -1} were observed. The dominant sharp peaks as well as a broad band in the spectral region 200-1800 cm{sup -1} with the maximum at {approx}450 cm{sup -1} demonstrate bistable behavior and arise from hydrogen-related non-effective-mass-like shallow donors.

  9. Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films

    CERN Document Server

    Ebothe, J; Cabarrocas, P R I; Godet, C; Equer, B

    2003-01-01

    Acoustically induced second harmonic generation (AISHG) in hydrogenated amorphous silicon (a-Si : H) films of different morphology has been observed. We have found that with increasing acoustical power, the optical SHG of Gd : YAB laser light (lambda = 2.03 mu m) increases and reaches its maximum value at an acoustical power density of about 2.10 W cm sup - sup 2. With decreasing temperature, the AISHG signal strongly increases below 48 K and correlates well with the temperature behaviour of differential scanning calorimetry indicating near-surface temperature phase transition. The AISHG maxima were observed at acoustical frequencies of 10-11, 14-16, 20-22 and 23-26 kHz. The independently performed measurements of the acoustically induced IR spectra have shown that the origin of the observed phenomenon is the acoustically induced electron-phonon anharmonicity in samples of different morphology.

  10. Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Wang Jin-Liang; Wu Er-Xing

    2007-01-01

    The B-and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD) .The microstructures of doped nc-Si:H films are carefully and systematically char acterized by using high resolution electron microscopy (HREM) ,Raman scattering,x-ray diffraction (XRD) ,Auger electron spectroscopy (AES) ,and resonant nucleus reaction (RNR) .The results show that as the doping concentration of PH3 increases,the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously.For the B-doped samples,as the doping concentration of B2H6 increases,no obvious change in the value of d is observed,but the value of Xc is found to decrease.This is especially apparent in the case of heavy B2H6 doped samples,where the films change from nanocrystalline to amorphous.

  11. Investigation of the degradation of a thin-film hydrogenated amorphous silicon photovoltaic module

    Energy Technology Data Exchange (ETDEWEB)

    van Dyk, E.E.; Audouard, A.; Meyer, E.L. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Woolard, C.D. [Department of Chemistry, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2007-01-23

    The degradation of a thin-film hydrogenated single-junction amorphous silicon (a-Si:H) photovoltaic (PV) module has been studied. We investigated the different modes of electrical and physical degradation of a-Si:H PV modules by employing a degradation and failure assessment procedure used in conjunction with analytical techniques, including, scanning electron microscopy (SEM) and thermogravimetry. This paper reveals that due to their thickness, thin films are very sensitive to the type of degradation observed. Moreover, this paper deals with the problems associated with the module encapsulant, poly(ethylene-co-vinylacetate) (EVA). The main objective of this study was to establish the influence of outdoor environmental conditions on the performance of a thin-film PV module comprising a-Si:H single-junction cells. (author)

  12. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    Science.gov (United States)

    Mazzillo, M.; Sciuto, A.; Mannino, G.; Renna, L.; Costa, N.; Badalà, P.

    2016-10-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320-400 nm) and UV-B (290-320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni2Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  13. Solid state photochemistry. Subpanel A-2(b): Metastability in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, D. [Solarex Corporation, Newton, PA (United States)

    1996-09-01

    All device quality amorphous silicon based materials exhibit degradation in electronic properties when exposed to sunlight. The photo-induced defects are associated with Si dangling bonds that are created by the recombination and/or trapping of photogenerated carriers. The defects are metastable and can be annealed out at temperatures of about 150 to 200 degrees Centigrade. The density of metastable defects is larger in films that are contaminated with > 10{sup 19} per cubic cm of impurities such as oxygen, carbon and nitrogen. However, recent experimental results indicate that some metastable defects are still present in films with very low impurity concentrations. The photo-induced defects typically saturate after 100 to 1000 hours of exposure to one sun illumination depending on the deposition conditions. There is also experimental evidence that photo-induced structural changes are occurring in the amorphous silicon based materials and that hydrogen may be playing an important role in both the photo-induced structural changes and in the creation of metastable defects.

  14. Computational investigation of hydrogen adsorption in silicon-lithium binary clusters

    Indian Academy of Sciences (India)

    Naresh K Jena; K Srinivasu; Swapan K Ghosh

    2012-01-01

    Theoretical studies on hydrogen adsorption properties of silicon-lithium binary clusters are carried out. We have considered three different clusters viz., Si5Li−5, Si5Li6 and Si5Li$^{+}_{7}$ and for each cluster, the geometries of different possible isomers are optimized. In all the minimum energy isomers of the three clusters considered, two of the lithium atoms are found to be situated in the axial positions and the remaining lithium atoms are in the equatorial position in the Si5 plane. The lithium atoms which are in Si5 plane are bonded to the Si-Si edge through a bridged bond instead of a corner in the Si5 ring. From the calculated atomic charges, it is found that there is a charge transfer from lithium to silicon leaving a partial positive charge on the Li atoms and the axial lithium atoms are more charged as compared to the remaining lithium atoms. In the case of Si5Li6 and Si5Li$^{+}_{7}$, the Li sites can trap a total of 14 and 17 H2 molecules, respectively, with each bridge bonded Li site adsorbing three H2 molecules and each axial Li adsorbing one H2 molecule which corresponds to a gravimetric density of 13.33 wt% and 15.25 wt%, respectively.

  15. Depth profile study on Raman spectra of high-energy-electron-irradiated hydrogenated amorphous silicon films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    According to the different penetration depths for the incident lights of 472 nm and 532 nm in hydrogenated amorphous silicon (a-Si:H) thin films, the depth profile study on Raman spectra of a-Si:H films was carried out. The network ordering evolution in the near surface and interior region of the unirradiated and irradiated a-Si:H films was investigated. The results show that there is a structural improvement in the shortand intermediate-range order towards the surface of the unirradiated a-Si:H films. The amorphous silicon network in the near and interior region becomes more disordered on the shortand intermediate-range scales after being irradiated with high energy electrons. However, the surface of the irradiated films becomes more disordered in comparison with their interior region, indicating that the created defects caused by electron irradiation are concentrated in the near surface of the irradiated films. Annealing eliminates the irradiation effects on a-Si:H thin films and the structural order of the irradiated films is similar to that of the unirradiated ones after being annealed. There exists a structural improvement in the shortand intermediate-range order towards the surface of the irradiated a-Si:H films after being annealed.

  16. Real-time transmission Mueller polarimetry on hydrogenated polymorphous silicon under current injection

    Science.gov (United States)

    Kim, Ka-Hyun; Haj Ibrahim, Bicher; Johnson, Erik V.; De Martino, Antonello; Cabarrocas, Pere Roca i.

    2013-01-01

    We report on the use of an innovative optical characterization technique—real-time Mueller polarimetric imaging in transmission—for the characterization of thin-film silicon solar cells. In this work, we used this technique to monitor the evolution of optical retardance induced by the mechanical stresses in hydrogenated amorphous and polymorphous silicon (a-Si : H and pm-Si : H) p-i-n (PIN) solar cells. Under current injection of 200 mA cm-2, the retardance of the pm-Si : H PIN solar cells decreased, while that of the a-Si : H PIN solar cells showed no significant change. After the current injection, the pm-Si : H PIN solar cells showed dramatic macroscopic changes on a scale of tens of micrometres, such as local peel-off and delamination from the substrate. Our results demonstrate that current injection introduces local stress relaxation, which can be efficiently monitored prior to irreversible damage from a decrease in the retardance of the pm-Si : H PIN solar cells.

  17. Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen

    Institute of Scientific and Technical Information of China (English)

    马志斌; 汪建华; 王传新; 满卫东

    2003-01-01

    Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeared in the XRD pattern confirms that the film is mainly composed of SP3 carbon. The diamond peak in the XRD pattern also broadens due to the nanocrystalline of the film.

  18. Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals

    Directory of Open Access Journals (Sweden)

    J. Bornacelli

    2014-01-01

    Full Text Available Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs have become the main building block of silicon photonic (modulators, waveguide, source, and detectors. In this work, we present an approach based on implantation of Ag (or Au ions and a proper thermal annealing in order to improve the photoluminescence (PL emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface. Once Si-NCs are formed inside the SiO2 we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.

  19. The effect of amorphous silicon surface hydrogenation on morphology, wettability and its implication on the adsorption of proteins

    Science.gov (United States)

    Filali, Larbi; Brahmi, Yamina; Sib, Jamal Dine; Bouhekka, Ahmed; Benlakehal, Djamel; Bouizem, Yahya; Kebab, Aissa; Chahed, Larbi

    2016-10-01

    We study the effect of amorphous silicon (a-Si) surface hydrogenation on Bovine Serum Albumin (BSA) adsorption. A set of (a-Si) films was prepared by radio frequency magnetron sputtering (RFMS) and after deposition; they were treated in molecular hydrogen ambient at different pressures (1-3 Pa). Fourier transform infrared attenuated total reflection (FTIR-ATR) spectroscopy and spectroscopic ellipsometry (SE) were used to study the hydrogenation effect and BSA adsorption. Atomic force microscopy (AFM) was used to evaluate morphological changes caused by hydrogenation. The wettability of the films was measured using contact angle measurement, and in the case of the hydrogenated surfaces, it was found to be driven by surface roughness. FTIR-ATR spectroscopy and SE measurements show that proteins had the strongest affinity toward the surfaces with the highest hydrogen content and their secondary structure was affected by a significant decrease of the α-helix component (-27%) compared with the proteins adsorbed on the un-treated surface, which had a predominantly α-helix (45%) structure. The adsorbed protein layer was found to be densely packed with a large thickness (30.9 nm) on the hydrogen-rich surfaces. The most important result is that the surface hydrogen content was the dominant factor, compared to wettability and morphology, for protein adsorption.

  20. Amorphous silicon films with high deposition rate prepared using argon and hydrogen diluted silane for stable solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gogoi, Purabi; Agarwal, Pratima [Department of Physics, IIT Guwahati, Guwahati 781039 (India); Dixit, P.N. [Plasma Processed Materials Division, National Physical Laboratory, New Delhi 110012 (India)

    2007-08-15

    Hydrogenated amorphous silicon films with high deposition rate (4-5 Aa/s) and reduced Staebler-Wronski effect are prepared using a mixture of silane (SiH{sub 4}), hydrogen and argon. The films show an improvement in short and medium range order. The structural, transport and stability studies on the films are done using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman scattering studies, electrical conductivity and diffusion length measurement. Presence of both atomic hydrogen and Ar{sup *} in the plasma causes breaking of weak Si-Si bonds and subsequent reconstruction of strong bonds resulting in improvement of short and medium range order. The improved structural order enhances the stability of these films against light soaking. High deposition rate is due to the lesser etching of growing surface compared to the case of only hydrogen diluted silane. (author)

  1. Structural and optical studies on hot wire chemical vapour deposited hydrogenated silicon films at low substrate temperature

    Energy Technology Data Exchange (ETDEWEB)

    Gogoi, Purabi; Agarwal, Pratima [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039, Assam (India)

    2009-02-15

    Thin films of hydrogenated silicon are deposited by hot wire chemical vapour deposition technique, as an alternative of plasma enhanced chemical vapour deposition technique. By varying the hydrogen and silane flow rate, we deposited the films ranging from pure amorphous to nanocrystallite-embedded amorphous in nature. In this paper we report extensively studied structural and optical properties of these films. It is observed that the rms bond angle deviation decreases with increase in hydrogen flow rate, which is an indication of improved order in the films. We discuss this under the light of breaking of weak Si-Si bonds and subsequent formation of strong Si-Si bonds and coverage of the growing surface by atomic hydrogen. (author)

  2. TRANSPORT PROPERTIES OF μc-Si:H FILMS PREPARED BY VERY HIGH HYDROGEN-DILUTED SILANE PLASMA

    Institute of Scientific and Technical Information of China (English)

    SHI JIAN-JUN; HUANG SHAO-YUN; CHEN KUN-JI; HUANG XIN-FAN; XU JUN

    2001-01-01

    Highly hydrogen-diluted silane plasma is used to fabricate microcrystalline silicon films in a plasma-enhanced chemical vapour deposition system. X-ray diffraction and micro-Raman scattering spectroscopy are utilized to characterize their microstructure properties. Dark conductivity and drift mobility are measured by the travelling wave method.With the decreasing gas flow ratio of silane-to-hydrogen from 2% to 0.2%, the crystalline volume fraction and the drift mobility increase at room temperature. Meanwhile, the dark conductivity increases initially and then decreases. The relationship between the microstructures and transport properties is discussed.

  3. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  4. The effect of amorphous silicon surface hydrogenation on morphology, wettability and its implication on the adsorption of proteins

    Energy Technology Data Exchange (ETDEWEB)

    Filali, Larbi, E-mail: larbifilali5@gmail.com [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria); Brahmi, Yamina; Sib, Jamal Dine [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria); Bouhekka, Ahmed [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria); Département de Physique, Université Hassiba Ben Bouali, 02000 Chlef (Algeria); Benlakehal, Djamel; Bouizem, Yahya; Kebab, Aissa; Chahed, Larbi [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria)

    2016-10-30

    Highlights: • Hydrogenation of the surfaces had the effect of reducing the roughness by way of shadow etching. • Roughness was the driving factor affecting the wettability of the hydrogenated surfaces. • Bovine Serum Albumin proteins favored the surfaces with highest hydrogen content. • Surface modification induced secondary structure change of adsorbed proteins. - Abstract: We study the effect of amorphous silicon (a-Si) surface hydrogenation on Bovine Serum Albumin (BSA) adsorption. A set of (a-Si) films was prepared by radio frequency magnetron sputtering (RFMS) and after deposition; they were treated in molecular hydrogen ambient at different pressures (1–3 Pa). Fourier transform infrared attenuated total reflection (FTIR-ATR) spectroscopy and spectroscopic ellipsometry (SE) were used to study the hydrogenation effect and BSA adsorption. Atomic force microscopy (AFM) was used to evaluate morphological changes caused by hydrogenation. The wettability of the films was measured using contact angle measurement, and in the case of the hydrogenated surfaces, it was found to be driven by surface roughness. FTIR-ATR spectroscopy and SE measurements show that proteins had the strongest affinity toward the surfaces with the highest hydrogen content and their secondary structure was affected by a significant decrease of the α-helix component (-27%) compared with the proteins adsorbed on the un-treated surface, which had a predominantly α-helix (45%) structure. The adsorbed protein layer was found to be densely packed with a large thickness (30.9 nm) on the hydrogen-rich surfaces. The most important result is that the surface hydrogen content was the dominant factor, compared to wettability and morphology, for protein adsorption.

  5. High-flux solar furnace processing of crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Menna, P. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)]|[ENEA-Centro Ricerche Fotovoltaiche, Portici 80055 (Italy); Landry, M.D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Gee, J.M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)]|[Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Ciszek, T.F. [National Renewable Energy Laboratory, Golden, Colorado, 80401 (United States)

    1997-02-01

    We studied the processing of crystalline-silicon solar cells using a 10-kW, high-flux solar furnace (HFSF). Major findings of this study include: (1) hydrogenated amorphous silicon films deposited on glass substrates can be converted to microcrystalline silicon by solid-phase crystallization in 5 seconds or less in the HFSF; (2) the presence of concentrated sunlight enhances the diffusion of phosphorus into silicon from a spin-on dopant source; (3) the combination of a porous-silicon surface layer and photo-enhanced impurity diffusion is very effective in gettering impurities from a metallurgical-grade silicon wafer or thin-layer silicon deposited using liquid-phase epitaxy; (4) a 14.1{percent}-efficient crystalline-silicon solar cell with an area of 4.6cm{sup 2} was fabricated using the HFSF for simultaneous diffusion of front n{sup +}-p and back p-p{sup +} junctions; and (5) we have shown that the HFSF can be used to texture crystalline-silicon surfaces and to anneal metal contacts printed on a silicon solar cell. {copyright} {ital 1997 American Institute of Physics.}

  6. High-flux solar furnace processing of crystalline silicon solar cells

    Science.gov (United States)

    Tsuo, Y. S.; Pitts, J. R.; Menna, P.; Landry, M. D.; Gee, J. M.; Ciszek, T. F.

    1997-02-01

    We studied the processing of crystalline-silicon solar cells using a 10-kW, high-flux solar furnace (HFSF). Major findings of this study include: (1) hydrogenated amorphous silicon films deposited on glass substrates can be converted to microcrystalline silicon by solid-phase crystallization in 5 seconds or less in the HFSF; (2) the presence of concentrated sunlight enhances the diffusion of phosphorus into silicon from a spin-on dopant source; (3) the combination of a porous-silicon surface layer and photo-enhanced impurity diffusion is very effective in gettering impurities from a metallurgical-grade silicon wafer or thin-layer silicon deposited using liquid-phase epitaxy; (4) a 14.1%-efficient crystalline-silicon solar cell with an area of 4.6 cm2 was fabricated using the HFSF for simultaneous diffusion of front n+-p and back p-p+ junctions; and (5) we have shown that the HFSF can be used to texture crystalline-silicon surfaces and to anneal metal contacts printed on a silicon solar cell.

  7. Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

    DEFF Research Database (Denmark)

    Madsen, Steen; Bozhevolnyi, Sergey I.; Birkelund, Karen

    1997-01-01

    Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium...

  8. Electronic and Optical Properties of Small Hydrogenated Silicon Quantum Dots Using Time-Dependent Density Functional Theory

    Directory of Open Access Journals (Sweden)

    Muhammad Mus-’ab Anas

    2015-01-01

    Full Text Available This paper presents a systematic study of the absorption spectrum of various sizes of small hydrogenated silicon quantum dots of quasi-spherical symmetry using the time-dependent density functional theory (TDDFT. In this study, real-time and real-space implementation of TDDFT involving full propagation of the time-dependent Kohn-Sham equations were used. The experimental results for SiH4 and Si5H12 showed good agreement with other earlier calculations and experimental data. Then these calculations were extended to study larger hydrogenated silicon quantum dots with diameter up to 1.6 nm. It was found that, for small quantum dots, the absorption spectrum is atomic-like while, for relatively larger (1.6 nm structure, it shows bulk-like behavior with continuous plateau with noticeable peak. This paper also studied the absorption coefficient of silicon quantum dots as a function of their size. Precisely, the dependence of dot size on the absorption threshold is elucidated. It was found that the silicon quantum dots exhibit direct transition of electron from HOMO to LUMO states; hence this theoretical contribution can be very valuable in discerning the microscopic processes for the future realization of optoelectronic devices.

  9. Influence of silicon on hot-dip aluminizing process and subsequent oxidation for preparing hydrogen/tritium permeation barrier

    Energy Technology Data Exchange (ETDEWEB)

    Han, Shilei; Li, Hualing; Wang, Shumao; Jiang, Lijun; Liu, Xiaopeng [Energy Materials and Technology Research Institute, General Research Institute for Nonferrous Metals, Beijing 100088 (China)

    2010-04-15

    The development of the International Thermonuclear Experimental Reactor (ITER) requires the production of a material capable of acting as a hydrogen/tritium permeation barrier on low activation steel. It is well known that thin alumina layer can reduce the hydrogen permeation rate by several orders of magnitude. A technology is introduced here to form a ductile Fe/Al intermetallic layer on the steel with an alumina over-layer. This technology, consisting of two main steps, hot-dip aluminizing (HDA) and subsequent oxidation behavior, seems to be a promising coating method to fulfill the required goals. According to the experiments that have been done in pure Al, the coatings were inhomogeneous and too thick. Additionally, a large number of cracks and porous band could be observed. In order to solve these problems, the element silicon was added to the aluminum melt with a nominal composition. The influence of silicon on the aluminizing and following oxidation process was investigated. With the addition of silicon into the aluminum melt, the coating became thinner and more homogeneous. The effort of the silicon on the oxidation behavior was observed as well concerning the suppression of porous band and cracks. (author)

  10. Effective interface state effects in hydrogenated amorphous-crystalline silicon heterostructures using ultraviolet laser photocarrier radiometry

    Science.gov (United States)

    Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.

    2013-12-01

    Ultraviolet photocarrier radiometry (UV-PCR) was used for the characterization of thin-film (nanolayer) intrinsic hydrogenated amorphous silicon (i-a-Si:H) on c-Si. The small absorption depth (approximately 10 nm at 355 nm laser excitation) leads to strong influence of the nanolayer parameters on the propagation and recombination of the photocarrier density wave (CDW) within the layer and the substrate. A theoretical PCR model including the presence of effective interface carrier traps was developed and used to evaluate the transport parameters of the substrate c-Si as well as those of the i-a-Si:H nanolayer. Unlike conventional optoelectronic characterization methods such as photoconductance, photovoltage, and photoluminescence, UV-PCR can be applied to more complete quantitative characterization of a-Si:H/c-Si heterojunction solar cells, including transport properties and defect structures. The quantitative results elucidate the strong effect of a front-surface passivating nanolayer on the transport properties of the entire structure as the result of effective a-Si:H/c-Si interface trap neutralization through occupation. A further dramatic improvement of those properties with the addition of a back-surface passivating nanolayer is observed and interpreted as the result of the interaction of the increased excess bulk CDW with, and more complete occupation and neutralization of, effective front interface traps.

  11. Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C. S.; Moutinho, H. R.; Reedy, R. C.; Al-Jassim, M. M.; Yan, B.; Yue, G.; Sivec, L.; Yang, J.; Guha, S.; Tong, X.

    2012-04-01

    We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement on a nc-Si:H cell with a higher oxygen impurity concentration shows that the nonuniformity of the electric field is much more pronounced than in samples having a lower O impurity, indicating that O is an electron donor in nc-Si:H materials. This nonuniform distribution of electric field implies a mixture of diffusion and drift of carrier transport in the nc-Si:H solar cells. The composition and structure of these nc-Si:H cells were further investigated by using secondary-ion mass spectrometry and Raman spectroscopy, respectively. The effects of impurity and structural properties on the electrical potential distribution and solar cell performance are discussed.

  12. Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy

    Science.gov (United States)

    Liao, Bolin; Najafi, Ebrahim; Li, Heng; Minnich, Austin J.; Zewail, Ahmed H.

    2017-09-01

    Charge carrier dynamics in amorphous semiconductors has been a topic of intense research that has been propelled by modern applications in thin-film solar cells, transistors and optical sensors. Charge transport in these materials differs fundamentally from that in crystalline semiconductors owing to the lack of long-range order and high defect density. Despite the existence of well-established experimental techniques such as photoconductivity time-of-flight and ultrafast optical measurements, many aspects of the dynamics of photo-excited charge carriers in amorphous semiconductors remain poorly understood. Here, we demonstrate direct imaging of carrier dynamics in space and time after photo-excitation in hydrogenated amorphous silicon (a-Si:H) by scanning ultrafast electron microscopy (SUEM). We observe an unexpected regime of fast diffusion immediately after photoexcitation, together with spontaneous electron-hole separation and charge trapping induced by the atomic disorder. Our findings demonstrate the rich dynamics of hot carrier transport in amorphous semiconductors that can be revealed by direct imaging based on SUEM.

  13. Optimization of electron beam patterned hydrogen silsesquioxane mask edge roughness for low-loss silicon waveguides

    Science.gov (United States)

    Wood, Michael G.; Chen, Li; Burr, Justin R.; Reano, Ronald M.

    2014-01-01

    We carried out a multiparameter fabrication study designed to reduce the line edge roughness (LER) of electron beam (e-beam) patterned hydrogen silsesquioxane resist for the purpose of producing low-loss silicon strip waveguides. Reduced mask roughness was achieved for 50°C pre-exposure baking, 5000 μC/cm2 dose with a beam spot size more than twice as large as the electron beam step size, development in 25% tetramethylammonium hydroxide and postdevelopment baking with rapid thermal annealing in an O2 ambient at 1000°C. The LER caused by pattern fracturing and stage stitches was reduced with multipass writing and per-pass linear and rotational offsets. Si strip waveguides patterned with the optimized mask have root-mean-square sidewall roughness of 2.1 nm with a correlation length of 94 nm, as measured by three-dimensional atomic force microscopy. Measured optical propagation losses of these waveguides across the telecommunications C-band were 2.5 and 2.8 dB/cm for the transverse magnetic and transverse electric modes, respectively. These reduced loss waveguides enable the fabrication of advanced planar lightwave circuit topologies.

  14. Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

    CERN Document Server

    Despeisse, M; Jarron, P; Kaplon, J; Moraes, D; Nardulli, A; Powolny, F; Wyrsch, N

    2008-01-01

    Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pul...

  15. Hydrogenic spin quantum computing in silicon, and, Damping and diffusion in a chain-boson model

    Science.gov (United States)

    Skinner, Andrew J.

    2006-12-01

    We propose an architecture for quantum computing with spin-pair encoded qubits in silicon. Electron-nuclear spin-pairs are controlled by a DC magnetic field and electrode-switched on and off hyperfine interaction. This digital processing is insensitive to tuning errors and easy to model. Electron shuttling between donors enables multi-qubit logic. These hydrogenic spin qubits are transferable to nuclear spin-pairs, which have long coherence times, and electron spin-pairs, which are ideally suited for measurement and initialization. The architecture is scaleable to highly parallel operation. We also study the open-system dynamics of a few two-level systems coupled together and embedded in a crystal lattice. In one case, superconducting quantum interference devices, or SQUIDs, exchange their angular momenta with the lattice. Some decaying oscillations can emerge in a lower energy subspace with a longer coherence time. In another case, the exchange coupling between spins-1/2 is strained by lattice distortions. At a critical point energy level crossing, four well-spaced spins dissipate collectively. This is partially true also for the two- or three-SQUID-chain. These collective couplings can improve coherence times.

  16. Phosphorus- and boron-doped hydrogenated amorphous silicon films prepared using vaporized liquid cyclopentasilane

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, 923-1292 (Japan); Takagishi, Hideyuki; Shen, Zhongrong; Ohdaira, Keisuke; Shimoda, Tatsuya [Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, 923-1292 (Japan); Japan Science and Technology Agency, ALCA, Nomi, Ishikawa, 923-1211 (Japan)

    2015-08-31

    A simple, inexpensive method for fabricating a hydrogenated amorphous silicon (a-Si:H) film using thermal chemical vapor deposition from cyclopentasilane (CPS) at atmospheric pressure with a substrate temperature of 370 °C is described. The reactant gas was generated from liquid CPS by vaporization in the deposition chamber. The vaporized CPS gas was transformed immediately into a-Si:H film on a heated substrate. The a-Si:H films could be doped either n- or p-type by dissolving appropriate amounts of white phosphorus or decaborane, respectively, in the liquid CPS before vaporization. This process allows deposition of doped a-Si:H films of photovoltaic device-quality without the need for handling, storage, or transportation of large amounts of gaseous reactants. - Highlights: • B and P doped a-Si:H films made from liquid materials is presented. • Decaborane and white phosphorus is dissolved in the liquid materials. • A simple, inexpensive method for fabricating a-Si:H films using non-vacuum process. • The doped a-Si:H films with usable quality for photovoltaic devices are deposited.

  17. Electric properties of undoped hydrogenated amorphous silicon semiconductors irradiated with self-ions

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Shin-ichiro, E-mail: sato.shinichiro@jaea.go.jp [Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sai, Hitoshi [National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Imaizumi, Mitsuru; Shimazaki, Kazunori [Japan Aerospace Exploration Agency (JAXA), 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan); Kondo, Michio [National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2012-08-15

    This paper reports dark conductivity (DC), photoconductivity (PC), and Seebeck coefficient variations of undoped hydrogenated amorphous silicon semiconductors irradiated with protons and Si ions. Both the DC and PC values show nonmonotonic variations with increasing a fluence in the case of proton irradiation, whereas the monotonic decreases are observed in the case of Si ion irradiation. From results of the Seebeck coefficient variation due to proton irradiation, it is shown that the increase in DC and PC in the low fluence regime is caused by donor-center generation. Also, it is shown by analyzing the proton energy dependence and the energy deposition process that the donor-center generation is based on the electronic excitation effect. On the other hand, the decrease in DC and PC in the high fluence regime is attributed to the carrier removal effect and the carrier lifetime decrease due to the accumulation of dangling bonds, respectively. The dangling bond generation due to ion irradiation is mainly caused by the displacement damage effect and therefore it is different from the generation process in the Staebler-Wronski effect.

  18. Anomalous enhancement in radiation induced conductivity of hydrogenated amorphous silicon semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Shin-ichiro, E-mail: sato.shinichiro@jaea.go.jp [Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sai, Hitoshi [National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Imaizumi, Mitsuru; Shimazaki, Kazunori [Japan Aerospace Exploration Agency (JAXA), 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan); Kondo, Michio [National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2012-09-01

    Electric conductivity variations of undoped hydrogenated amorphous silicon (a-Si:H) semiconductors induced by swift protons are investigated. The results show that the conductivity drastically increases at first and then decreases on further irradiation. The conductivity enhancement is observed only in the low fluence regime and lasts for a prolonged period of time when proton irradiation stops in this fluence regime. On the other hand, the photosensitivity has a minimum value around the conductivity peak. This fact indicates that non-equilibrium carriers do not play a dominant role in the electric conduction in this fluence regime. It is found that the anomalous conductivity enhancement in the low fluence regime is dominated by donor center generation. At higher fluences the conductivity during irradiation is dominated by non-equilibrium carriers as the generated donor centers disappear. It is also found that the RIC in the high fluence regime is proportional to the carrier generation rate. This indicates that the recombination process of non-equilibrium carriers is dominated by indirect recombination via defect levels.

  19. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  20. Thermodynamics of Volatile Species in the Silicon-Oxygen-Hydrogen System Studied

    Science.gov (United States)

    Jacobson, Nathan S.; Opila, Elizabeth J.; Copland, Evan H.; Myers, Dwight

    2005-01-01

    The volatilization of silica (SiO2) to silicon hydroxides and oxyhydroxides because of reaction with water vapor is important in a variety of high-temperature corrosion processes. For example, the lifetimes of silicon carbide (SiC) and silicon nitride (Si3N4) - based components in combustion environments are limited by silica volatility. To understand and model this process, it is essential to have accurate thermodynamic data for the formation of volatile silicon hydroxides and oxyhydroxides.

  1. Hydrogen, oxygen and hydroxyl on porous silicon surface: A joint density-functional perturbation theory and infrared spectroscopy approach

    Energy Technology Data Exchange (ETDEWEB)

    Alfaro, Pedro; Palavicini, Alessio; Wang, Chumin, E-mail: chumin@unam.mx

    2014-11-28

    Based on the density functional perturbation theory (DFPT), infrared absorption spectra of porous silicon are calculated by using an ordered pore model, in which columns of silicon atoms are removed along the [001] direction and dangling bonds are initially saturated with hydrogen atoms. When these atoms on the pore surface are gradually replaced by oxygen ones, the ab-initio infrared absorption spectra reveal oxygen, hydroxyl, and coupled hydrogen–oxygen vibrational modes. In a parallel way, freestanding porous silicon samples were prepared by using electrochemical etching and they were further thermally oxidized in a dry oxygen ambient. Fourier transform infrared spectroscopy was used to investigate the surface modifications caused by oxygen adsorption. In particular, the predicted hydroxyl and oxygen bound to the silicon pore surface are confirmed. Finally, a global analysis of measured transmittance spectra has been performed by means of a combined DFPT and thin-film optics approach. - Highlights: • The density functional perturbation theory is used to study infrared absorption. • An ordered pore model is used to investigate the oxidation in porous silicon (PSi). • Infrared transmittance spectra of oxidized PSi freestanding samples are measured.

  2. Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass

    Directory of Open Access Journals (Sweden)

    Mason L. Terry

    2007-01-01

    Full Text Available The changes in open-circuit voltage (Voc, short-circuit current density (Jsc, and internal quantum efficiency (IQE of aLuminum induced crystallization, ion-assisted deposition (ALICIA polycrystalline silicon thin-film solar cells on low-temperature glass substrates due to rapid thermal anneal (RTA treatment and subsequent remote microwave hydrogen plasma passivation (hydrogenation are examined. Voc improvements from 130 mV to 430 mV, Jsc improvements from 1.2 mA/cm2 to 11.3 mA/cm2, and peak IQE improvements from 16% to > 70% are achieved. A 1-second RTA plateau at 1000°C followed by hydrogenation increases the Jsc by a factor of 5.5. Secondary ion mass spectroscopy measurements are used to determine the concentration profiles of dopants, impurities, and hydrogen. Computer modeling based on simulations of the measured IQE data reveals that the minority carrier lifetime in the absorber region increases by 3 orders of magnitude to about 1 nanosecond (corresponding to a diffusion length of at least 1 μm due to RTA and subsequent hydrogenation. The evaluation of the changes in the quantum efficiency and Voc due to RTA and hydrogenation with computer modeling significantly improves the understanding of the limiting factors to cell performance.

  3. Impact of contamination on hydrogenated amorphous silicon thin films and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woerdenweber, Jan

    2011-09-26

    This thesis deals with atmospheric contamination and cross-contamination of boron (single-chamber process) of the intrinsic absorber layer (i-layer) of p-i-n thin film solar cells based on hydrogenated amorphous silicon. The atmospheric contaminations were introduced by means of intentional leaks. Hereby, the focus is on the influence of contamination species (oxygen and nitrogen), quantity of contamination (leak flow), source of contamination (leaks at chamber wall or in the process gas pipe), and plasma power on the properties of solar cells. Thereby, the minimum requirements for the purity of vacuum and process gas as well as leak conditions of the recipient and gas pipe system have been determined. Additionally, deposition regimes were developed, where the incorporation of impurities is significantly suppressed. For standard processes critical levels of nitrogen and oxygen contamination are determined to be {proportional_to} 4 x 10{sup 18} cm{sup -3} and {proportional_to} 2 x 10{sup 19} cm{sup -3}, respectively, for a leak situated at the chamber wall. Above these concentrations the solar cell efficiency deteriorates. In literature, incorporation of oxygen and nitrogen in doping configuration is assumed to be the reason for the cell deterioration. This assumption is supported by additional material studies of contaminated absorber layers done in this work. The difference in critical concentration is due to the higher doping efficiency of nitrogen compared to that for oxygen. Nevertheless, applying an air leak the critical concentrations of O and N are reached almost simultaneously since the incorporation probability of oxygen is about one order of magnitude higher compared to that for nitrogen. Applying a leak in the process gas pipe the critical oxygen contamination level increases to {proportional_to} 2 x 10{sup 20} cm{sup -3} whereas the critical nitrogen level remains unchanged compared to a chamber wall leak. Applying a deposition regime with a very high

  4. Metal induced crystallization of silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  5. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Tao [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  6. First-principles study of hydrogen-enhanced phosphorus diffusion in silicon

    Energy Technology Data Exchange (ETDEWEB)

    The Anh, Le, E-mail: letheanh@jaist.ac.jp; Lam, Pham Tien; Manoharan, Muruganathan; Matsumura, Hideki; Otsuka, Nobuo; Hieu Chi, Dam [School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai 1-1, Nomishi, Ishikawa 923-1292 (Japan); Tien Cuong, Nguyen [Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Thanh Xuan, Hanoi (Viet Nam); Mizuta, Hiroshi [School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai 1-1, Nomishi, Ishikawa 923-1292 (Japan); Nanoelectronics and Nanotechnologies Research Group, Electronics and Computer Science, Faculty of Physical Sciences and Engineering, University of Southampton, Highfield, Southampton, Hampshire SO17 1BJ (United Kingdom)

    2016-01-28

    We present a first-principles study on the interstitial-mediated diffusion process of neutral phosphorus (P) atoms in a silicon crystal with the presence of mono-atomic hydrogen (H). By relaxing initial Si structures containing a P atom and an H atom, we derived four low-energy P-H-Si defect complexes whose formation energies are significantly lower than those of P-Si defect complexes. These four defect complexes are classified into two groups. In group A, an H atom is located near a Si atom, whereas in group B, an H atom is close to a P atom. We found that the H atom pairs with P or Si atom and changes the nature bonding between P and Si atoms from out-of-phase conjugation to in-phase conjugation. This fact results in the lower formation energies compare to the cases without H atom. For the migration of defect complexes, we have found that P-H-Si defect complexes can migrate with low barrier energies if an H atom sticks to either P or Si atom. Group B complexes can migrate from one lattice site to another with an H atom staying close to a P atom. Group A complexes cannot migrate from one lattice site to another without a transfer of an H atom from one Si atom to another Si atom. A change in the structure of defect complexes between groups A and B during the migration results in a transfer of an H atom between P and Si atoms. The results for diffusion of group B complexes show that the presence of mono-atomic H significantly reduces the activation energy of P diffusion in a Si crystal, which is considered as a summation of formation energy and migration barrier energy, leading to the enhancement of diffusion of P atoms at low temperatures, which has been suggested by recent experimental studies.

  7. Effect of bombardment with iron ions on the evolution of helium, hydrogen, and deuterium blisters in silicon

    Science.gov (United States)

    Reutov, V. F.; Dmitriev, S. N.; Sokhatskii, A. S.; Zaluzhnyi, A. G.

    2017-02-01

    The effect of bombardment with iron ions on the evolution of gas porosity in silicon single crystals has been studied. Gas porosity has been produced by implantation hydrogen, deuterium, and helium ions with energies of 17, 12.5, and 20 keV, respectively, in identical doses of 1 × 1017 cm-2 at room temperature. For such energy of bombarding ions, the ion doping profiles have been formed at the same distance from the irradiated surface of the sample. Then, the samples have been bombarded with iron Fe10+ ions with energy of 150 keV in a dose of 5.9 × 1014 cm-2. Then 30-min isochoric annealing has been carried out with an interval of 50°C in the temperature range of 250-900°C. The samples have been analyzed using optical and electron microscopes. An extremely strong synergetic effect of sequential bombardment of silicon single crystals with gas ions and iron ions at room temperature on the nucleation and growth of gas porosity during postradiation annealing has been observed. For example, it has been shown that the amorphous layer formed in silicon by additional bombardment with iron ions stimulates the evolution of helium blisters, slightly retards the evolution of hydrogen blisters, and completely suppresses the evolution of deuterium blisters. The results of experiments do not provide an adequate explanation of the reason for this difference; additional targeted experiments are required.

  8. Modelling (1 0 0) hydrogen-induced platelets in silicon with a multi-scale molecular dynamics approach

    Energy Technology Data Exchange (ETDEWEB)

    Moras, G. [Department of Physics, King' s College London, Strand, London WC2R 2LS (United Kingdom)], E-mail: gianpietro.moras@kcl.ac.uk; Colombi Ciacchi, L. [Fraunhofer Institut fuer Werkstoffmechanik, Woehlerstrasse 11, 79108 Freiburg (Germany); Institut fuer Zuverlaessigkeit von Bauteilen und Systemen, University of Karlsruhe, Kaiserstrasse 12, 76131 Karlsruhe (Germany); Csanyi, G. [Department of Engineering, Centre for Micromechanics, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ (United Kingdom); De Vita, A. [Department of Physics, King' s College London, Strand, London WC2R 2LS (United Kingdom); INFM-DEMOCRITOS National Simulation Centre and Centre of Excellence for Nanostructured Materials (CENMAT), University of Trieste (Italy)

    2007-12-15

    We introduce a multiscale molecular dynamics (MD) approach to study the thermal evolution of (1 0 0) hydrogen-induced platelets (HIPs) in silicon. The HIPs are modeled by {approx}10 nm long planar defects in a periodically repeated crystalline model system containing {approx}25,000 silicon atoms. The initial defect models are created either by cleavage of atomic planes or by planar assemblies of vacancies, and are stabilized by saturating the resulting surface dangling bonds with hydrogen atoms. The time evolution of the defects is studied by finite-temperature MD using the 'Learn On The Fly' (LOTF) technique. This hybrid scheme allows us to perform accurate density-functional-tight-binding (DFTB) force calculations only on the chemically reactive platelet zone, while the surrounding silicon crystal is described by the Stillinger-Weber (SW) classical potential. Reliable dynamical trajectories are obtained by choosing the DFTB zone in a way which minimizes the errors on the atomic forces.

  9. Size-, electric-field-, and frequency-dependent third-order nonlinear optical properties of hydrogenated silicon nanoclusters

    Science.gov (United States)

    Li, Haipeng; Xu, Hu; Shen, Xiaopeng; Han, Kui; Bi, Zetong; Xu, Runfeng

    2016-06-01

    We investigated the electronic properties and second hyperpolarizabilities of hydrogenated silicon nanoclusters (H-SiNCs) by using the density functional theory method. The effects of cluster size, external electric field and incident frequency on the second hyperpolarizability were also examined, respectively. We found that small H-SiNCs exhibit large second hyperpolarizability. With the increase of the number of silicon atoms in H-SiNCs, the frontier molecular orbital energy gap decreases, attributed to the enhancement of the second hyperpolarizability. Interestingly, we also found the electric-field-induced gigantic enhancement of the second hyperpolarizability for H-SiNCs due to the change of electron density distributions. In addition, our results demonstrate a significant dependence on the frequency of incident light.

  10. Size-, electric-field-, and frequency-dependent third-order nonlinear optical properties of hydrogenated silicon nanoclusters.

    Science.gov (United States)

    Li, Haipeng; Xu, Hu; Shen, Xiaopeng; Han, Kui; Bi, Zetong; Xu, Runfeng

    2016-06-16

    We investigated the electronic properties and second hyperpolarizabilities of hydrogenated silicon nanoclusters (H-SiNCs) by using the density functional theory method. The effects of cluster size, external electric field and incident frequency on the second hyperpolarizability were also examined, respectively. We found that small H-SiNCs exhibit large second hyperpolarizability. With the increase of the number of silicon atoms in H-SiNCs, the frontier molecular orbital energy gap decreases, attributed to the enhancement of the second hyperpolarizability. Interestingly, we also found the electric-field-induced gigantic enhancement of the second hyperpolarizability for H-SiNCs due to the change of electron density distributions. In addition, our results demonstrate a significant dependence on the frequency of incident light.

  11. Size-, electric-field-, and frequency-dependent third-order nonlinear optical properties of hydrogenated silicon nanoclusters

    Science.gov (United States)

    Li, Haipeng; Xu, Hu; Shen, Xiaopeng; Han, Kui; Bi, Zetong; Xu, Runfeng

    2016-01-01

    We investigated the electronic properties and second hyperpolarizabilities of hydrogenated silicon nanoclusters (H-SiNCs) by using the density functional theory method. The effects of cluster size, external electric field and incident frequency on the second hyperpolarizability were also examined, respectively. We found that small H-SiNCs exhibit large second hyperpolarizability. With the increase of the number of silicon atoms in H-SiNCs, the frontier molecular orbital energy gap decreases, attributed to the enhancement of the second hyperpolarizability. Interestingly, we also found the electric-field-induced gigantic enhancement of the second hyperpolarizability for H-SiNCs due to the change of electron density distributions. In addition, our results demonstrate a significant dependence on the frequency of incident light. PMID:27305957

  12. Effect of inelastic and elastic energy losses of Xe ions on the evolution of hydrogen blisters in silicon

    Science.gov (United States)

    Reutov, V. F.; Dmitriev, S. N.; Sokhatskii, A. S.; Zaluzhnyi, A. G.

    2016-01-01

    We analyze the effect of irradiation by heavy ions on the formation of blisters on the silicon surface preliminarily ion-doped with hydrogen. An attempt is made at differentiating inelastic and elastic processes of interaction between ions and Si atoms using bombardment of the sample with high-energy charged particles through a bent absorbing filter by varying the radiation doses and the energy of bombarding Xe ions. It is found that irrespective of specific ionization energy losses of heavy ions, the blister formation is completely suppressed in the zone of the inelastic interaction during postradiation annealing. Conversely, stimulated development of hydrogen porosity takes place at the same time in the zone of elastic interaction, which is manifested in the form of blisters and flaking.

  13. Hydrogen generation from methylamine using silicon carbide nanotubes as a dehydrogenation catalyst: a density functional theory study.

    Science.gov (United States)

    Esrafili, Mehdi D; Nurazar, Roghaye

    2015-02-01

    The adsorption and decomposition of methylamine on the surface of a pristine silicon-carbide nanotube (SiCNT) are investigated by density functional theory calculations. The adsorption energies of possible stable configurations and the activation energies for possible elementary reactions involved are obtained in the present study. The most favorable reaction channel that generates a hydrogen cyanide molecule and four hydrogen atoms is slightly endothermic; the energy barrier for the decomposition of the CH3NH2 molecule is about 45 kcal/mol. Since the activation energy for the side reaction that generates CH3 and NH2 fragments is relatively high, the generation of side products may be depressed by decreasing the temperature.

  14. Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition

    Science.gov (United States)

    Yong, Cao; Hailong, Zhang; Fengzhen, Liu; Meifang, Zhu; Gangqiang, Dong

    2015-02-01

    Polycrystalline silicon (poly-Si) films were prepared by hot-wire chemical vapor deposition (HWCVD) at a low substrate temperature of 525 °C. The influence of hydrogen on the epitaxial growth of ploy-Si films was investigated. Raman spectra show that the poly-Si films are fully crystallized at 525 °C with a different hydrogen dilution ratio (50%-91.7%). X-ray diffraction, grazing incidence X-ray diffraction and SEM images show that the poly-Si thin films present (100) preferred orientation on (100) c-Si substrate in the high hydrogen dilution condition. The P-type poly-Si film prepared with a hydrogen dilution ratio of 91.7% shows a hall mobility of 8.78 cm2/(V·s) with a carrier concentration of 1.3 × 1020 cm-3, which indicates that the epitaxial poly-Si film prepared by HWCVD has the possibility to be used in photovoltaic and TFT devices.

  15. Mesoporous silicon synthesis and applications in Li-ion batteries and solar hydrogen fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Donghai; Dai, Fang; Yi, Ran; Zai, Jianto

    2017-05-23

    We provide a mesoporous silicon material (PSi) prepared via a template-free and HF-free process. The production process is facile and scalable, and it may be conducted under mild reaction conditions. The silicon may be produced directly by the reduction of a silicon-halogenide precursor (for example, SiCl.sub.4) with an alkaline alloy (for example, NaK alloy). The resulting Si-salt matrix is then annealed for the pore formation and crystallite growth. Final product is obtained by removal of the salt by-products with water.

  16. 非晶硅锗电池性能的调控研究%Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

    Institute of Scientific and Technical Information of China (English)

    刘伯飞; 白立沙; 魏长春; 孙建; 侯国付; 赵颖; 张晓丹

    2013-01-01

    采用射频等离子体增强化学气相沉积技术,研究了非晶硅锗薄膜太阳电池。针对非晶硅锗薄膜材料的本身特性,通过调控硅锗合金中硅锗的比例,实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制。借助于本征层硅锗材料帯隙梯度的设计,获得了可有效用于多结叠层电池中的非晶硅锗电池。%In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium mate-rial, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.

  17. Standalone ethanol micro-reformer integrated on silicon technology for onboard production of hydrogen-rich gas.

    Science.gov (United States)

    Pla, D; Salleras, M; Morata, A; Garbayo, I; Gerbolés, M; Sabaté, N; Divins, N J; Casanovas, A; Llorca, J; Tarancón, A

    2016-08-07

    A novel design of a silicon-based micro-reformer for onboard hydrogen generation from ethanol is presented in this work. The micro-reactor is fully fabricated with mainstream MEMS technology and consists of an active low-thermal-mass structure suspended by an insulating membrane. The suspended structure includes an embedded resistive metal heater and an array of ca. 20k vertically aligned through-silicon micro-channels per square centimetre. Each micro-channel is 500 μm in length and 50 μm in diameter allowing a unique micro-reformer configuration that presents a total surface per projected area of 16 cm(2) cm(-2) and per volume of 320 cm(2) cm(-3). The walls of the micro-channels become the active surface of the micro-reformer when coated with a homogenous thin film of Rh-Pd/CeO2 catalyst. The steam reforming of ethanol under controlled temperature conditions (using the embedded heater) and using the micro-reformer as a standalone device are evaluated. Fuel conversion rates above 94% and hydrogen selectivity values of ca. 70% were obtained when using operation conditions suitable for application in micro-solid oxide fuel cells (micro-SOFCs), i.e. 750 °C and fuel flows of 0.02 mlL min(-1) (enough to feed a one watt power source).

  18. Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

    Science.gov (United States)

    Mandal, Aparajita; Kole, Arindam; Dasgupta, Arup; Chaudhuri, Partha

    2016-11-01

    Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

  19. Bioinspired molecular co-catalysts bonded to a silicon photocathode for solar hydrogen evolution

    DEFF Research Database (Denmark)

    Hou, Yidong; Abrams, Billie L.; Vesborg, Peter Christian Kjærgaard

    2011-01-01

    -abundant alternatives are needed for large-scale use. We show that bioinspired molecular clusters based on molybdenum and sulphur evolve hydrogen at rates comparable to that of platinum. The incomplete cubane-like clusters (Mo3S 4) efficiently catalyse the evolution of hydrogen when coupled to a p-type Si semiconductor......The production of fuels from sunlight represents one of the main challenges in the development of a sustainable energy system. Hydrogen is the simplest fuel to produce and although platinum and other noble metals are efficient catalysts for photoelectrochemical hydrogen evolution, earth...

  20. Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties

    Directory of Open Access Journals (Sweden)

    V.S. Waman

    2011-01-01

    Full Text Available Thin films of hydrogenated nanocrystalline silicon are prepared at reasonably higher deposition rates (9-13 Å/s by indigenously fabricated hot-wire chemical vapor deposition system at various substrate temperatures (Ts. In this paper we report extensively studied structural, optical and electrical properties of these films by Fourier transform infrared (FTIR spectroscopy, low angle X-ray diffraction (low angle XRD, micro-Raman spectroscopy and UV-Visible spectroscopy. The low angle XRD and micro-Raman spectroscopy analysis indicate amorphous-to-nanocrystalline transition occurred at Ts = 300 °C. It is observed that volume fraction of crystallites and its size increases with increase in Ts. The low angle XRD study also shows nc-Si:H films with well-identified lattice planes of (111 orientation. In addition, it is observed from the FTIR spectroscopy that the hydrogen is incorporated in the film mainly in Si-H2 and (Si-H2n complexes. The nc-Si:H films with low hydrogen content (< 4 at. % and wide band gap (1.83-1.89 eV and low refractive index (< 3 is useful for various device applications.

  1. Hydrogenated amorphous silicon p-i-n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

    NARCIS (Netherlands)

    Wank, M. A.; van Swaaij, R.; R. van de Sanden,; Zeman, M.

    2012-01-01

    We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200 degrees C and growth rates of about 1?nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with incr

  2. Structural defects caused by a rough substrate and their influence on the performance of hydrogenated nano-crystalline silicon n-i-p solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongbo B.T.; Franken, Ronald H.; Rath, Jatindra K.; Schropp, Ruud E.I. [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Faculty of Science, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht (Netherlands)

    2009-03-15

    We present a cross-sectional transmission electron microscopy study of a set of hydrogenated nano-crystalline silicon n-i-p solar cells deposited by hot-wire chemical vapour deposition on Corning glass substrates coated with ZnO-covered Ag layers with various surface roughnesses. Strip-like structural defects (voids and low-density areas) are observed in the silicon layers originating from micro-valleys of Ag grains. A correlation between the opening angles of the textured surface and the appearance of these strips was found. We propose that in order to grow high-quality hydrogenated nano-crystalline silicon absorber layers for solar cell applications, the morphology of the Ag surface is a critical property, and the micro-valleys at the ZnO surface with an opening angle smaller than around 110 should be avoided. (author)

  3. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content. Annual subcontract report, 1 March 1991--31 January 1992

    Energy Technology Data Exchange (ETDEWEB)

    Fortmann, C.M.; Hegedus, S.S. [Institute of Energy Conversion, Newark, DE (United States)

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  4. Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    Seung Yeop Myong

    2007-01-01

    Full Text Available The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon- (a-Si:H- based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the two-component model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.

  5. Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate.

    Science.gov (United States)

    Colangelo, Francesco; Piazza, Vincenzo; Coletti, Camilla; Roddaro, Stefano; Beltram, Fabio; Pingue, Pasqualantonio

    2017-03-10

    We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman (μ-Raman) spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolayer graphene can be achieved by tuning the bias voltage during LAO. Finally, a complete compositional characterization was achieved by scanning electron microscopy and energy dispersive spectroscopy.

  6. PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

    Institute of Scientific and Technical Information of China (English)

    Xu Jun; Ma Tian-fu; Li Wei; Chen Kun-ji; Li Zhi-feng; Lu Wei

    2000-01-01

    Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown byusing an organic source, xylene (C8H{10), instead of methane(CH4) in a conventional plasma enhanced chemical vapor depositionsystem. The optical band gap of these samples was increased gradually bychanging the gas ratio of C8H10 to SiH4. The film with highoptical band gap was soft and polymer-like and intense photoluminescencewere obtained. Room temperature electro-luminescence was also achievedwith peak energy at 2.05 eV (600 nm) for the a-SiC:H film withoptical band gap of 3.2 eV.1.8mm

  7. Fabrication of hydrogenated amorphous silicon carbide films by decomposition of hexamethyldisilane with microwave discharge flow of Ar

    Science.gov (United States)

    Ito, Haruhiko; Kumakura, Motoki; Suzuki, Tsuneo; Niibe, Masahito; Kanda, Kazuhiro; Saitoh, Hidetoshi

    2016-06-01

    Hydrogenated amorphous silicon carbide films have been fabricated by the decomposition of hexamethyldisilane with a microwave discharge flow of Ar. Mechanically hard films were obtained by applying radio-frequency (RF) bias voltages to the substrate. The atomic compositions of the films were analyzed by a combination of Rutherford backscattering and elastic recoil detection, X-ray photoelectron spectroscopy (XPS), and glow discharge optical emission spectroscopy. The chemical structure was analyzed by carbon-K near-edge X-ray absorption fine structure spectroscopy, high-resolution XPS, and Fourier transform infrared absorption spectroscopy. The structural changes upon the application of RF bias were investigated, and the concentration of O atoms near the film surface was found to play a key role in the mechanical hardness of the present films.

  8. Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate

    Science.gov (United States)

    Colangelo, Francesco; Piazza, Vincenzo; Coletti, Camilla; Roddaro, Stefano; Beltram, Fabio; Pingue, Pasqualantonio

    2017-03-01

    We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman (μ-Raman) spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolayer graphene can be achieved by tuning the bias voltage during LAO. Finally, a complete compositional characterization was achieved by scanning electron microscopy and energy dispersive spectroscopy.

  9. Proximity gettering of C3H5 carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

    Science.gov (United States)

    Kurita, Kazunari; Kadono, Takeshi; Okuyama, Ryousuke; Hirose, Ryo; Onaka-Masada, Ayumi; Koga, Yoshihiro; Okuda, Hidehiko

    2016-12-01

    A new technique is described for manufacturing silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication. It is demonstrated that this technique can implant wafers simultaneously with carbon and hydrogen elements that form the projection range by using hydrocarbon compounds. Furthermore, these wafers can getter oxygen impurities out-diffused from the silicon substrate to the carbon cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as dark current and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly reduce dark current in advanced CMOS image sensors.

  10. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    Science.gov (United States)

    Mutch, Michael J.; Lenahan, Patrick M.; King, Sean W.

    2016-08-01

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  11. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

    Science.gov (United States)

    Wienkes, Lee Raymond

    Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

  12. Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

    Directory of Open Access Journals (Sweden)

    M. M. Kamble

    2014-01-01

    Full Text Available Structural, optical, and electrical properties of hydrogenated silicon carbide (SiC:H films, deposited from silane (SiH4 and methane (CH4 gas mixture by HW-CVD method, were investigated. Film properties are carefully and systematically studied as function of deposition pressure which is varied between 200 mTorr and 500 mTorr. The deposition rate is found to be reasonably high (9.4 nm/s hydrogen content increases with increasing deposition pressure and was found to be <20 at.%. The absence of band ~1300–1600 cm−1 in the Raman spectra implies negligible C–C bond concentration and formation of nearly stoichiometric SiC:H films. The band gap shows increasing trend with increasing deposition pressure. The high value of Urbach energy suggests increased structural disorder in SiC:H films. Finally, it has been concluded that CH4 can be used as effective carbon source in HW-CVD method to prepare stoichiometric SiC:H films.

  13. Method for depositing high-quality microcrystalline semiconductor materials

    Science.gov (United States)

    Guha, Subhendu; Yang, Chi C.; Yan, Baojie

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  14. Tuning the Photoelectrocatalytic Hydrogen Evolution of Pt-Decorated Silicon Photocathodes by the Temperature and Time of Electroless Pt Deposition.

    Science.gov (United States)

    Fabre, Bruno; Li, Gaozeng; Gouttefangeas, Francis; Joanny, Loic; Loget, Gabriel

    2016-11-15

    The electroless deposition of Pt nanoparticles (NPs) on hydrogen-terminated silicon (H-Si) surfaces is studied as a function of the temperature and the immersion time. It is demonstrated that isolated Pt structures can be produced at all investigated temperatures (between 22 and 75 °C) for short deposition times, typically within 1-10 min if the temperature is 45 °C or less than 5 min at 75 °C. For longer times, dendritic metal structures start to grow, ultimately leading to highly rough interconnected Pt networks. Upon increasing the temperature from 22 to 75 °C and for an immersion time of 5 min, the average size of the observed Pt NPs monotonously increases from 120 to 250 nm, and their number density calculated using scanning electron microscopy decreases from (4.5 ± 1.0) × 10(8) to (2.0 ± 0.5) × 10(8) Pt NPs cm(-2). The impact of both the morphology and the distribution of the Pt NPs on the photoelectrocatalytic activity of the resulting metallized photocathodes is then analyzed. Pt deposited at 45 °C for 5 min yields photocathodes with the best electrocatalytic activity for the hydrogen evolution reaction. Under illumination at 33 mW cm(-2), this optimized photoelectrode shows a fill factor of 45%, an efficiency (η) of 9.7%, and a short-circuit current density (|Jsc|) at 0 V versus a reversible hydrogen electrode of 15.5 mA cm(-2).

  15. A first principles analysis of the effect of hydrogen concentration in hydrogenated amorphous silicon on the formation of strained Si-Si bonds and the optical and mobility gaps

    Energy Technology Data Exchange (ETDEWEB)

    Legesse, Merid; Nolan, Michael, E-mail: Michael.nolan@tyndall.ie; Fagas, Giorgos, E-mail: Georgios.fagas@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland)

    2014-05-28

    In this paper, we use a model of hydrogenated amorphous silicon generated from molecular dynamics with density functional theory calculations to examine how the atomic geometry and the optical and mobility gaps are influenced by mild hydrogen oversaturation. The optical and mobility gaps show a volcano curve as the hydrogen content varies from undersaturation to mild oversaturation, with largest gaps obtained at the saturation hydrogen concentration. At the same time, mid-gap states associated with dangling bonds and strained Si-Si bonds disappear at saturation but reappear at mild oversaturation, which is consistent with the evolution of optical gap. The distribution of Si-Si bond distances provides the key to the change in electronic properties. In the undersaturation regime, the new electronic states in the gap arise from the presence of dangling bonds and strained Si-Si bonds, which are longer than the equilibrium Si-Si distance. Increasing hydrogen concentration up to saturation reduces the strained bonds and removes dangling bonds. In the case of mild oversaturation, the mid-gap states arise exclusively from an increase in the density of strained Si-Si bonds. Analysis of our structure shows that the extra hydrogen atoms form a bridge between neighbouring silicon atoms, thus increasing the Si-Si distance and increasing disorder in the sample.

  16. Fabrication and Modeling of Ambipolar Hydrogenated Amorphous Silicon Thin Film Transistors.

    Science.gov (United States)

    1986-08-01

    that over 150 die can be fabricated on a single 2in Si wafer. Individual die are 4 -- ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ - -- rM M- ri- PA NX RA "’K Kno ’--tx...Kusian, and B. Bullemer, "An Ambipolar Amorphous- Silicon Field-Effect Transistor," Siemens Forsch.-u. Entwickl.-Ber., vol. 14, no. 3, pp. 114-119...1985. 99. H. Pfleiderer, W. Kusian, and B. Bullemer, "An Ambipolar Field-Effect Transistor Model," Siemens Forsch.-u. Entwicki.-Ber., vol. 14, no. 2, pp

  17. Hydrogen Production Using a Molybdenum Sulfide Catalyst on a Titanium-Protected n+p-Silicon Photocathode

    DEFF Research Database (Denmark)

    Seger, Brian; Laursen, Anders Bo; Vesborg, Peter Christian Kjærgaard

    2012-01-01

    A low-cost substitute: A titanium protection layer on silicon made it possible to use silicon under highly oxidizing conditions without oxidation of the silicon. Molybdenum sulfide was electrodeposited on the Ti-protected n+p-silicon electrode. This electrode was applied as a photocathode for water...

  18. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  19. Scanning tunneling microscopy characterization of the geometric and electronic structure of hydrogen-terminated silicon surfaces

    Science.gov (United States)

    Kaiser, W. J.; Bell, L. D.; Hecht, M. H.; Grunthaner, F. J.

    1988-01-01

    Scanning tunneling microscopy (STM) methods are used to characterize hydrogen-terminated Si surfaces prepared by a novel method. The surface preparation method is used to expose the Si-SiO2 interface. STM images directly reveal the topographic structure of the Si-SiO2 interface. The dependence of interface topography on oxide preparation conditions observed by STM is compared to the results of conventional surface characterization methods. Also, the electronic structure of the hydrogen-terminated surface is studied by STM spectroscopy. The near-ideal electronic structure of this surface enables direct tunnel spectroscopy measurements of Schottky barrier phenomena. In addition, this method enables probing of semiconductor subsurface properties by STM.

  20. Characterization of hydrogenated and deuterated silicon carbide films codeposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pantelica, D., E-mail: pantel@ifin.nipne.ro [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, RO-077125, 30 Reactorului St., Magurele (Romania); Ionescu, P.; Petrascu, H. [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, RO-077125, 30 Reactorului St., Magurele (Romania); Dracea, M.D. [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, RO-077125, 30 Reactorului St., Magurele (Romania); Faculty of Physics, University of Bucharest, 405 Atomistilor Str., RO-077125, P.O.B. MG-11, Magurele-Bucharest (Romania); Statescu, M. [Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, RO-077125, 30 Reactorului St., Magurele (Romania); Matei, E.; Rasoga, O. [National Institute of Materials Physics, RO-077125, 105 bis Atomistilor Str., Magurele-Bucharest (Romania); Stancu, C. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest (Romania); Marascu, V. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest (Romania); Faculty of Physics, University of Bucharest, 405 Atomistilor Str., RO-077125, P.O.B. MG-11, Magurele-Bucharest (Romania); Ion, V. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest (Romania); Acsente, T., E-mail: tomy@infim.ro [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest (Romania); Dinescu, G. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest (Romania)

    2016-03-15

    In this work we present the deposition of amorphous SiC thin films by radiofrequency dual magnetron sputtering. The dependence of the deposited films properties over the discharges electrical power and the effect of hydrogenous species (H{sub 2} and/or D{sub 2}) addition to main discharge gas (Ar) were investigated. Accurate elemental analysis of the samples, including detection of hydrogen and deuterium, was performed by ion beam analysis (IBA) techniques: RBS (Rutherford Backscattering Spectrometry) and ERDA (Elastic Recoil Detection Analysis). SiC{sub x} thin films with thicknesses between 1700 and 4500 Å and C/Si ratio between 0.2/1 and 1.25/1 were obtained in different deposition conditions. The results prove that thin films of amorphous SiC with well controlled properties can be produced using radiofrequency dual magnetron sputtering.

  1. Observation of a microcrystalline gel in colloids with competing interactions.

    Science.gov (United States)

    Zhang, Tian Hui; Groenewold, Jan; Kegel, Willem K

    2009-12-14

    A stable short-range crystalline structure is observed in colloidal systems with competing short-range attractions and long-range repulsions. We term these structures "microcrystalline gels" as the microcrystals are embedded in a dense disordered network.

  2. Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Szekeres, A. [Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrova, S. [Department of Applied Physics, Technical University of Sofia, Kl. Ohridski 8, 1797 Sofia (Bulgaria); Petrik, P., E-mail: petrik@mfa.kfki.hu [MFA Institute for Technical Physics and Materials Science, TTK Research Centre for Natural Sciences, Konkoly Thege Rd. 29-33, 1121 Budapest (Hungary); Fodor, B. [MFA Institute for Technical Physics and Materials Science, TTK Research Centre for Natural Sciences, Konkoly Thege Rd. 29-33, 1121 Budapest (Hungary); Bakalova, S. [Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria)

    2013-09-15

    The structure and the optical properties of thin Si layer hydrogenated by shallow plasma ion implantation with different fluences up to 10{sup 15} cm{sup −2} are studied using spectroscopic ellipsometry and simulation of the distributions of the ions and implantation induced defects. The implantation was regarded to proceed into Si through the native SiO{sub 2}. Two-layer optical models are applied for examination of the composition and dielectric function behavior of the formed structures. The native oxide is found to be 3 nm thick. The thickness of the Si modified layer decreased 23 to 14 nm with ion fluence due to increased formation of highly hydrogenated surface region that hinder further H-penetration into the Si bulk, especially at the highest fluence. Shifts of the features in the obtained dielectric functions related with Si interband transitions at about 3.4 and 4.2 eV are found caused by process-induced tensile stress. The modified Si region is related rather to defects created by the ion implantation process than the projected range of hydrogen ions. The overall layer modification can be characterized by a low degree of amorphization (up to 5.8%), creation of structural defects and internal tensile stress.

  3. Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD

    Institute of Scientific and Technical Information of China (English)

    Wu Chunbo; Zhou Yuqin; Li Guorong; Liu Fengzhen

    2011-01-01

    Amorphous/crystalline silicon heterojunctions (a-Si:H/c-Si SHJ) were prepared by plasma-enhanced chemical vapor deposition (PECVD).The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heterojunctions was studied.Experimental results indicate that:(1) The instability of plasma in the initial stage will damage the surface ofc-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.(2) The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s.

  4. Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Westra, J.M.; Swaaij, R.A.C.M.M. van [Photovoltaic Materials and Devices, Department of Sustainable Electrical Energy, Delft University of Technology, Delft (Netherlands); Šutta, P. [New Technologies-Research Centre, University of West Bohemia, Plzen (Czech Republic); Sharma, K.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Zeman, M. [Photovoltaic Materials and Devices, Department of Sustainable Electrical Energy, Delft University of Technology, Delft (Netherlands)

    2014-10-01

    Thin-film polycrystalline silicon on glass obtained by crystallization of hydrogenated amorphous silicon (a-Si:H) films is an interesting alternative for thin-film silicon solar cells. Although the solar-cell efficiencies are still limited, this technique offers excellent opportunity to study the influence of B-doping on the crystallisation process of a-Si:H. Our approach is to slowly crystallize B-doped a-Si:H films by solid phase crystallization in the temperature range 580–600°C. We use plasma-enhanced chemical vapour deposition (PECVD) and expanding thermal plasma chemical vapour deposition (ETPCVD) for the B-doped a-Si:H deposition. In this work we show the first in-situ study of the crystallization process of B-doped a-Si:H films produced by ETPCVD and make a comparison to the crystallization of intrinsic ETPCVD deposited a-Si:H as well as intrinsic and B-doped a-Si:H films deposited by PECVD. The crystallization process is investigated by in-situ x-ray diffraction, using a high temperature chamber for the annealing procedure. The study shows a strong decrease in the time required for full crystallisation for B-doped a-Si:H films compared to the intrinsic films. The time before the onset of crystallisation is reduced by the incorporation of B as is the grain growth velocity. The time to full crystallisation can be manipulated by the B{sub 2}H{sub 6}-to-SiH{sub 4} ratio used during the deposition and by the microstructure of the as-deposited a-Si:H films. - Highlights: • Solid-phase crystallization of B-doped a-Si:H films is presented. • Crystallization study of B-doped and intrinsic a-Si:H by in-situ x-ray diffraction • The microstructure and B-doping of a-Si:H influences the crystallisation process. • B enhances the grain growth rate, but the effect on the nucleation rate is limited.

  5. Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film

    CERN Document Server

    Wang Yong; Chen Chang Yong; Diao Hong Wei; Zhang Shi Bin; Xu Yan Yue; Kong Guang Lin; Liao Xian Bo

    2002-01-01

    Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200 degree C. The effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600 degree C, which it increases with increasing annealing temperature from 600 to 900 degree C. The light-emission of the films are enhanced with increasing annealing temperature up to 500 degree C, while it is rapidly reduced when the annealing temperature exceeds 600 degree C. The peak position of the PL spectrum blue shifts by annealing at the temperature of 300 degree C, then it redshifts with further raising annealing temperature. The following hydrogen plasma treatment results i...

  6. Integer quantum Hall effect on a six-valley hydrogen-passivated silicon (111) surface.

    Science.gov (United States)

    Eng, K; McFarland, R N; Kane, B E

    2007-07-01

    We report magnetotransport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate that the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors is difficult to reconcile with noninteracting electron theory.

  7. Additives to silane for thin film silicon photovoltaic devices

    Science.gov (United States)

    Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

    2013-09-17

    Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

  8. Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Catena, Alberto [Department of Physics, University of Koblenz-Landau, 56070 Koblenz (Germany); McJunkin, Thomas [Department of Physics, The Ohio State University, 43210 Columbus, Ohio (United States); Agnello, Simonpietro; Gelardi, Franco M. [Department of Physics and Chemistry, University of Palermo, 90100 Palermo (Italy); Wehner, Stefan [Department of Physics, University of Koblenz-Landau, 56070 Koblenz (Germany); Fischer, Christian B., E-mail: chrbfischer@uni-koblenz.de [Department of Physics, University of Koblenz-Landau, 56070 Koblenz (Germany)

    2015-08-30

    Graphical abstract: - Highlights: • Two different a-C:H coatings in various thicknesses on Si (1 0 0) have been studied. • For both types no significant difference in surface morphology is detectable. • The grain number with respect to their height appears randomly distributed. • In average no grain higher than 14 nm and larger than 0.05 μm{sup 2} was observed. • A height to area correlation confines all detected grains to a limited region. - Abstract: Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp{sup 2} carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp{sup 2} carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

  9. 掺磷微晶硅薄膜的微结构及光学性质的研究%Microstructures and Optical Properties of P-Doped Hydrogenated Silicon Microcrystalline Films

    Institute of Scientific and Technical Information of China (English)

    刘玉芬; 郜小勇; 刘绪伟; 赵剑涛; 卢景霄

    2008-01-01

    本文采用等离子体增强化学气相沉积(PECVD)技术,在普通玻璃上制备了本征和掺磷的氢化微晶硅(μc-Si:H)薄膜.利用Raman散射谱,计算了表征其薄膜微结构的晶化率(Xc)和平均晶粒尺寸(d).结果表明随着磷烷(PH3)浓度的增加,其Xc和d均呈现了先增加后减小的相似趋势;利用测得的透射谱和反射谱,并利用Tauc公式拟合了μc-Si:H薄膜的光学带隙(Egopt).研究表明,μc-Si:H薄膜的Egopt与Xc具有相反的变化趋势.该结果可利用Kronig-Penney模型和表征函数F(x)作出合理解释.

  10. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering.

    Science.gov (United States)

    Daouahi, Mohsen; Omri, Mourad; Kerm, Abdul Ghani Yousseph; Al-Agel, Faisal Abdulaziz; Rekik, Najeh

    2015-02-01

    The aim of the study reported in this paper is to investigate the role of the high partial pressure of hydrogen introduced during the growth of nanocrystalline silicon carbide thin films (nc-SiC:H). For this purpose, we report the preparation as well as spectroscopic studies of four series of nc-SiC:H obtained by radio-frequency magnetron sputtering at high partial pressure of hydrogen by varying the percentage of H2 in the gas mixture from 70% to 100% at common substrate temperature (TS=500°C). The effects of the dilution on the structural changes and the chemical bonding of the different series have been studied using Fourier transform infrared and Raman spectroscopy. For this range of hydrogen dilution, two groups of films were obtained. The first group is characterized by the dominance of the crystalline phase and the second by a dominance of the amorphous phase. This result confirms the multiphase structure of the grown nc-SiC:H thin films by the coexistence of the SiC network, carbon-like and silicon-like clusters. Furthermore, infrared results show that the SiC bond is the dominant absorption peak and the carbon atom is preferentially bonded to silicon. The maximum value obtained of the crystalline fraction is about 77%, which is relatively important compared to other results obtained by other techniques. In addition, the concentration of CHn bonds was found to be lower than that of SiHn for all series. Raman measurements revealed that the crystallization occurs in all series even at 100% H2 dilution suggesting that high partial pressure of hydrogen favors the formation of silicon nanocrystallites (nc-Si). The absence of both the longitudinal acoustic band and the transverse optical band indicate that the crystalline phase is dominant.

  11. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    Science.gov (United States)

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

  12. Microspot-based ELISA in microfluidics: chemiluminescence and colorimetry detection using integrated thin-film hydrogenated amorphous silicon photodiodes.

    Science.gov (United States)

    Novo, Pedro; Prazeres, Duarte Miguel França; Chu, Virginia; Conde, João Pedro

    2011-12-07

    Microfluidic technology has the potential to decrease the time of analysis and the quantity of sample and reactants required in immunoassays, together with the potential of achieving high sensitivity, multiplexing, and portability. A lab-on-a-chip system was developed and optimized using optical and fluorescence microscopy. Primary antibodies are adsorbed onto the walls of a PDMS-based microchannel via microspotting. This probe antibody is then recognised using secondary FITC or HRP labelled antibodies responsible for providing fluorescence or chemiluminescent and colorimetric signals, respectively. The system incorporated a micron-sized thin-film hydrogenated amorphous silicon photodiode microfabricated on a glass substrate. The primary antibody spots in the PDMS-based microfluidic were precisely aligned with the photodiodes for the direct detection of the antibody-antigen molecular recognition reactions using chemiluminescence and colorimetry. The immunoassay takes ~30 min from assay to the integrated detection. The conditions for probe antibody microspotting and for the flow-through ELISA analysis in the microfluidic format with integrated detection were defined using antibody solutions with concentrations in the nM-μM range. Sequential colorimetric or chemiluminescence detection of specific antibody-antigen molecular recognition was quantitatively detected using the photodiode. Primary antibody surface densities down to 0.182 pmol cm(-2) were detected. Multiplex detection using different microspotted primary antibodies was demonstrated.

  13. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells

    Science.gov (United States)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-07-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm2, which is 48.76% higher than that of flat system.

  14. Enhancement of hydrogenated amorphous silicon solar cells with front-surface hexagonal plasmonic arrays from nanoscale lithography

    Science.gov (United States)

    Zhang, Chenlong; Gwamuri, Jephias; Cvetanovic, Sandra; Sadatgol, Mehdi; Guney, Durdu O.; Pearce, Joshua M.

    2017-07-01

    The study first uses numerical simulations of hexagonal triangle and sphere arrays to optimize the performance of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices. The simulations indicated the potential for a sphere array to provide optical enhancement (OE) up to 7.4% compared to a standard cell using a nanosphere radius of 250 nm and silver film thickness of 50 nm. Next a detailed series of a-Si:H cells were fabricated and tested for quantum efficiency and characteristic and current-voltage (I-V) profiles using a solar simulator. Triangle and sphere array based cells, as well as the uncoated reference cells are analyzed and the results find that the simulation does not precisely predict the observed enhancement, but it forecasts a trend and can be used to guide fabrication. In general, the measured OE follows the simulated trend: (1) for triangular arrays no enhancement is observed and as the silver thickness increases the more degradation of the cell; (2) for annealed arrays both measured and simulated OE occur with the thinner silver thickness. Measured efficiency enhancement reached 20.2% and 10.9% for nanosphere diameter D = 500 nm, silver thicknesses h = 50 nm and 25 nm, respectively. These values, which surpass simulation results, indicate that this method is worth additional investigation.

  15. Conduction Mechanism of Amorphous Hydrogenated Silicon Nitride Films%a-SiNx∶H薄膜的导电机制

    Institute of Scientific and Technical Information of China (English)

    王燕; 岳瑞峰

    2001-01-01

    研究了a-SiNx∶H薄膜的电导激活能与氮含量的关系。结果表明,随氮含量增加,样品表现出两种并行的电导机制:欧姆机制与Poole-Frenkel机制。采用两种电导机制拟合电流随温度变化曲线后得到了不同氮含量样品的电导激活能。由于氮在非晶硅中为施主类杂质,且具有特殊的结构组态,因而提出了一种调制掺杂模型解释了实验现象。%Dependence of conductivity activated energy on nitrogen contents in amorphous hydrogenated silicon nitride (a-SiNx∶H)films was studied.The results show that both Ohmic mechanism and Poole-Frenkel mechanism are responsible for the variations in the conductivity activated energies.Temperature dependence of the current can be analytically evaluated by means of the two mechanisms and the conductivity activated energies can be calculated for samples with different nitrogen contents.Since nitrogen is a donor-type impurity with special stoichiometry in a-SiNx∶H,we propose a modulated doping model to understand the dependence of the conductivity activated energy on N contents.

  16. A global model study of silane/hydrogen discharges

    Science.gov (United States)

    Danko, Stephan; Bluhm, Dirk; Bolsinger, Valentin; Dobrygin, Wladislaw; Schmidt, Oliver; Brinkmann, Ralf Peter

    2013-10-01

    An algorithm to automatically build a general global chemical model on the basis of a set of chemical reactions is developed for capacitively coupled discharges. The methodology is applied to silane/hydrogen discharge regimes relevant for the deposition of microcrystalline silicon thin films for solar cell fabrication. The input parameters of the model are merely the process conditions such as absorbed power, pressure, gas flow, gas mixture and gap distance as well as the electron energy distribution function. Computational time is less than 30 s for an analytical description of the electron energy distribution and less than 40 s in the case of a look-up table for one set of process parameters for a silane/hydrogen gas mixture. The electron Boltzmann equation solver BOLSIG+ is used to determine the most appropriate electron energy distribution depending on different process conditions of this application. The numerical results of the global model are compared with measurements of silane depletion from the literature and show good agreement. A wide range of process conditions relevant for the deposition of thin-film silicon is covered. An analysis of the effect of different process conditions on the resulting plasma composition is performed. This shows the potential of a global model for silane/hydrogen discharges.

  17. Influence of hydrogen dilution on structural, electrical and optical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by plasma enhanced chemical vapour deposition (PE-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Funde, A.M.; Bakr, Nabeel Ali; Kamble, D.K. [School of Energy Studies, University of Pune, Pune 411 007 (India); Hawaldar, R.R.; Amalnerkar, D.P. [Center for Materials for Electronics Technology (C-MET), Panchawati, Pune 411 008 (India); Jadkar, S.R. [Department of Physics, University of Pune, Ganeshkhind Road, Pune 411 007 (India)

    2008-10-15

    Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by conventional plasma enhanced chemical vapour deposition (PE-CVD) method at low temperature (200 C) using high rf power. The structural, optical and electrical properties of these films are carefully and systematically investigated as a function of hydrogen dilution of silane (R). Characterization of these films with low angle X-ray diffraction and Raman spectroscopy revealed that the crystallite size in the films tends to decrease and at same time the volume fraction of crystallites increases with increase in R. The Fourier transform infrared (FTIR) spectroscopic analysis showed at low values of R, the hydrogen is predominantly incorporated in the nc-Si:H films in the mono-hydrogen (Si-H) bonding configuration. However, with increasing R the hydrogen bonding in nc-Si:H films shifts from mono-hydrogen (Si-H) to di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2}){sub n} complexes. The hydrogen content in the nc-Si:H films decreases with increase in R and was found less than 10 at% over the entire studied range of R. On the other hand, the Tauc's optical band gap remains as high as 2 eV or much higher. The quantum size effect may responsible for higher band gap in nc-Si:H films. A correlation between electrical and structural properties has been found. For optimized deposition conditions, nc-Si:H films with crystallite size {proportional_to}7.67 nm having good degree of crystallinity ({proportional_to}84%) and high band gap (2.25 eV) were obtained with a low hydrogen content (6.5 at%). However, for these optimized conditions, the deposition rate was quite small (1.6 Aa/s). (author)

  18. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Wan-bing; YU Wei; WU Li-ping; CUI Shuang-kui; FU Guang-sheng

    2006-01-01

    Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared absorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

  19. Hydrogen.

    Science.gov (United States)

    Bockris, John O'M

    2011-11-30

    The idea of a "Hydrogen Economy" is that carbon containing fuels should be replaced by hydrogen, thus eliminating air pollution and growth of CO₂ in the atmosphere. However, storage of a gas, its transport and reconversion to electricity doubles the cost of H₂ from the electrolyzer. Methanol made with CO₂ from the atmosphere is a zero carbon fuel created from inexhaustible components from the atmosphere. Extensive work on the splitting of water by bacteria shows that if wastes are used as the origin of feed for certain bacteria, the cost for hydrogen becomes lower than any yet known. The first creation of hydrogen and electricity from light was carried out in 1976 by Ohashi et al. at Flinders University in Australia. Improvements in knowledge of the structure of the semiconductor-solution system used in a solar breakdown of water has led to the discovery of surface states which take part in giving rise to hydrogen (Khan). Photoelectrocatalysis made a ten times increase in the efficiency of the photo production of hydrogen from water. The use of two electrode cells; p and n semiconductors respectively, was first introduced by Uosaki in 1978. Most photoanodes decompose during the photoelectrolysis. To avoid this, it has been necessary to create a transparent shield between the semiconductor and its electronic properties and the solution. In this way, 8.5% at 25 °C and 9.5% at 50 °C has been reached in the photo dissociation of water (GaP and InAs) by Kainthla and Barbara Zeleney in 1989. A large consortium has been funded by the US government at the California Institute of Technology under the direction of Nathan Lewis. The decomposition of water by light is the main aim of this group. Whether light will be the origin of the post fossil fuel supply of energy may be questionable, but the maximum program in this direction is likely to come from Cal. Tech.

  20. Reduction of Quartz to Silicon Monoxide by Methane-Hydrogen Mixtures

    Science.gov (United States)

    Li, Xiang; Zhang, Guangqing; Tronstad, Ragnar; Ostrovski, Oleg

    2016-08-01

    The reduction of quartz was studied isothermally in a fluidized bed reactor using continuously flowing methane-hydrogen gas mixture in the temperature range from 1623 K to 1773 K (1350 °C to 1500 °C). The CO content in the off-gas was measured online using an infrared gas analyzer. The main phases of the reduced samples identified by XRD analysis were quartz and cristobalite. Significant weight loss in the reduction process indicated that the reduction products were SiO and CO. Reduction of SiO2 to SiO by methane starts with adsorption and dissociation of CH4 on the silica surface. The high carbon activity in the CH4-H2 gas mixture provided a strongly reducing condition. At 1623 K (1350 °C), the reduction was very slow. The rate and extent of reduction increased with the increasing temperature to 1723 K (1450 °C). A further increase in temperature to 1773 K (1500 °C) resulted in a decrease in the rate and extent of reduction. An increase in the gas flow rate from 0.4 to 0.8 NL/min and an increase in the methane content in the CH4-H2 gas mixture from 0 to 5 vol pct facilitated the reduction. Methane content in the gas mixture should be maintained at less than 5 vol pct in order to suppress methane cracking.

  1. Application of metal nanowire networks on hydrogenated amorphous silicon thin film solar cells

    Science.gov (United States)

    Xie, Shouyi; Hou, Guofu; Chen, Peizhuan; Jia, Baohua; Gu, Min

    2017-02-01

    We demonstrate the application of metal nanowire (NW) networks as a transparent electrode on hydrogenated amorphous Si (a-Si:H) solar cells. We first systematically investigate the optical performances of the metal NW networks on a-Si:H solar cells in different electrode configurations through numerical simulations to fully understand the mechanisms to guide the experiments. The theoretically optimized configuration is discovered to be metal NWs sandwiched between a 40 nm indium tin oxide (ITO) layer and a 20 nm ITO layer. The overall performances of the solar cells integrated with the metal NW networks are experimentally studied. It has been found the experimentally best performing NW integrated solar cell deviates from the theoretically predicated design due to the performance degradation induced by the fabrication complicity. A 6.7% efficiency enhancement was achieved for the solar cell with metal NW network integrated on top of a 60 nm thick ITO layer compared to the cell with only the ITO layer due to enhanced electrical conductivity by the metal NW network.

  2. Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies

    DEFF Research Database (Denmark)

    Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

    1991-01-01

    in Si. The results have been compared with those of proton-irradiated Si. A 100–300-K annealing stage was clearly observed in hydrogen (H+) -implanted Si, and this stage was almost identical to that in the p-irradiated Si. The final annealing state of the H+-implanted Si started at about 400 K......High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV 3He2 ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects......, and it is connected to annealing out of negatively charged divacancy-oxygen pairs. This stage was clearly longer than that for the p-irradiated Si, probably due to the breakup of Si-H bonds at about 550 K. The 100-K annealing stage was not seen with the He-implanted samples. This has been explained by assuming...

  3. Application of metal nanowire networks on hydrogenated amorphous silicon thin film solar cells.

    Science.gov (United States)

    Xie, Shouyi; Hou, Guofu; Chen, Peizhuan; Jia, Baohua; Gu, Min

    2017-02-24

    We demonstrate the application of metal nanowire (NW) networks as a transparent electrode on hydrogenated amorphous Si (a-Si:H) solar cells. We first systematically investigate the optical performances of the metal NW networks on a-Si:H solar cells in different electrode configurations through numerical simulations to fully understand the mechanisms to guide the experiments. The theoretically optimized configuration is discovered to be metal NWs sandwiched between a 40 nm indium tin oxide (ITO) layer and a 20 nm ITO layer. The overall performances of the solar cells integrated with the metal NW networks are experimentally studied. It has been found the experimentally best performing NW integrated solar cell deviates from the theoretically predicated design due to the performance degradation induced by the fabrication complicity. A 6.7% efficiency enhancement was achieved for the solar cell with metal NW network integrated on top of a 60 nm thick ITO layer compared to the cell with only the ITO layer due to enhanced electrical conductivity by the metal NW network.

  4. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  5. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  6. A novel passivation process of silicon nanowires by a low-cost PECVD technique for deposition of hydrogenated silicon nitride using SiH4 and N2 as precursor gases

    Science.gov (United States)

    Bouaziz, Lamia; Dridi, Donia; Karyaoui, Mokhtar; Angelova, Todora; Sanchez Plaza, Guillermo; Chtourou, Radhouane

    2017-03-01

    In this work, a different SiNx passivation process of silicon nanowires has been opted for the deposition of a hydrogenated silicon nitride (SiNx:H) by a low-cost plasma enhanced chemical vapor deposition (PECVD) using silane ( SiH4 and nitrogen ( N2 as reactive gases. This study is focused on the effect of the gas flow ratio on chemical composition, morphological, optical and optoelectronic properties of silicon nanowires. The existence of Si-N and Si-H bonds was proven by the Fourier transmission infrared (FTIR) spectrum. Morphological structures were shown by scanning electron microscopy (SEM), and the roughness was investigated by atomic force microscopy (AFM). A low reflectivity less than 6% in the wavelength range 250-1200nm has been shown by UV-visible spectroscopy. Furthermore, the thickness and the refractive index of the passivation layer is determined by ellipsometry measurements. As a result, an improvement in minority carrier lifetime has been obtained by reducing surface recombination of silicon nanowires.

  7. Hydrogen passivation of defects and rapid thermal processing for high-efficiency silicon ribbon solar cells

    Science.gov (United States)

    Jeong, Ji-Weon

    2002-01-01

    The use of photovoltaic (PV) system offers a unique opportunity to solve the energy and the environmental problems simultaneously because solar energy is free and can be directly converted into electrical energy by solar cells without any undesirable impact on the environment. In spite of the many advantages, PV still accounts for less than 0.05% of the current U.S. energy portfolio. This is mainly because PV is 2-4 times more expensive than traditional energy sources. PV modules should cost about $1/W to produce electricity at a rate of 6¢/kWh and to compete with fossil fuels. Since Si material accounts for ˜40% of the cost of current Si PV modules, the use of low-cost Si substrate is critical for cost reduction. Edge-defined film-fed grown (EFG) Si ribbon is the focus as substrate materials for this research because it is one of the most promising for low-cost PV. However, as-grown EFG Si has a lot of impurities and crystal defects resulted from the Si feedstock and its growth system, which reduce the bulk lifetime of less than 3 ms. In this research, first, the requirements for achieving 16% efficiency have been established using computer model simulations. To improve the bulk lifetime, manufacturable P and Al gettering techniques are developed to remove the lifetime-killing impurities from the active to inactive device regions. PECVD SiN-induced hydrogen defect passivation is investigated and maximized through the fundamental understanding of the role of Al, the impact of RTP firing, and the difference between two PECVD SiN films. For low-cost contact formation, a novel RTP firing process is developed for high-quality screen-printed contacts and Al-BSF. Finally, a complete process sequence that involves the optimal conditions for defect passivation and contacts is developed to produce ˜16% efficiency on screen-printed EFG Si solar cells, which is the highest efficiency for any screen-printed Si ribbon solar cells to date.

  8. Hydrogen

    Directory of Open Access Journals (Sweden)

    John O’M. Bockris

    2011-11-01

    Full Text Available The idea of a “Hydrogen Economy” is that carbon containing fuels should be replaced by hydrogen, thus eliminating air pollution and growth of CO2 in the atmosphere. However, storage of a gas, its transport and reconversion to electricity doubles the cost of H2 from the electrolyzer. Methanol made with CO2 from the atmosphere is a zero carbon fuel created from inexhaustible components from the atmosphere. Extensive work on the splitting of water by bacteria shows that if wastes are used as the origin of feed for certain bacteria, the cost for hydrogen becomes lower than any yet known. The first creation of hydrogen and electricity from light was carried out in 1976 by Ohashi et al. at Flinders University in Australia. Improvements in knowledge of the structure of the semiconductor-solution system used in a solar breakdown of water has led to the discovery of surface states which take part in giving rise to hydrogen (Khan. Photoelectrocatalysis made a ten times increase in the efficiency of the photo production of hydrogen from water. The use of two electrode cells; p and n semiconductors respectively, was first introduced by Uosaki in 1978. Most photoanodes decompose during the photoelectrolysis. To avoid this, it has been necessary to create a transparent shield between the semiconductor and its electronic properties and the solution. In this way, 8.5% at 25 °C and 9.5% at 50 °C has been reached in the photo dissociation of water (GaP and InAs by Kainthla and Barbara Zeleney in 1989. A large consortium has been funded by the US government at the California Institute of Technology under the direction of Nathan Lewis. The decomposition of water by light is the main aim of this group. Whether light will be the origin of the post fossil fuel supply of energy may be questionable, but the maximum program in this direction is likely to come from Cal. Tech.

  9. Development of a reaxff reactive force field for silicon/oxygen/hydrogen/fluoride interactions and applications to hydroxylation and friction

    Science.gov (United States)

    Yeon, Jejoon

    Molecular dynamics (MD) simulations with the ReaxFF reactive force field were carried out to find the atomistic mechanisms for tribo-chemical reactions occurring at the sliding interface of fully-hydroxylated amorphous silica and oxidized silicon as a function of interfacial water amount. The ReaxFF-MD simulations showed a significant amount of mass transfer across the interface occurs during the sliding. In the absence of water molecules, the interfacial mixing was initiated by dehydroxylation followed by the Si-O-Si bond formation bridging two solid surfaces. In the presence of sub-monolayer thick water, the dissociation of water molecules can provide additional reaction pathways to form the Si-O-Si bridge bonds and mass transfers across the interface. However, when the amount of interfacial water molecules was large enough to form full monolayer, the degree of mass transfer was substantially reduced since the silicon atoms at the sliding interface were terminated with hydroxyl groups rather than forming interfacial Si-O-Si bridge bonds. The ReaxFF-MD simulations clearly showed the role of water molecules in atomic scale mechano-chemical processes during the sliding and provided physical insights into tribochemical wear processes of silicon oxide surfaces observed experimentally. In addition to this, we performed reactive force field molecular dynamics simulation to observe the hydrolysis reactions between water molecules and locally strained SiO2 geometries. We improved the Si/O/H force field from Fogarty et al.1, to more accurately describe the hydroxylation reaction barrier for strained and non-strained Si-O structures, which are about 20 kcal/mol and 30 kcal/mol, respectively. After optimization, energy barrier for the hydroxylation shows a good agreement with DFT data. The observation of silanol formation at the high-strain region of a silica nano-rod also supports the concept that the adsorption of water molecule: hydroxyl formation favors the geometry with

  10. Atmospheric Pressure Plasma CVD of Amorphous Hydrogenated Silicon Carbonitride (a-SiCN:H) Films Using Triethylsilane and Nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Srinivasan Guruvenket; Steven Andrie; Mark Simon; Kyle W. Johnson; Robert A. Sailer

    2011-10-04

    Amorphous hydrogenated silicon carbonitride (a-SiCN:H) thin films are synthesized by atmospheric pressure plasma enhanced chemical vapor (AP-PECVD) deposition using the Surfx Atomflow{trademark} 250D APPJ source with triethylsilane (HSiEt{sub 3}, TES) and nitrogen as the precursor and the reactive gases, respectively. The effect of the substrate temperature (T{sub s}) on the growth characteristics and the properties of a-SiCN:H films was evaluated. The properties of the films were investigated via scanning electron microscopy (SEM), atomic force microscopy (AFM) for surface morphological analyses, Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS) for chemical and compositional analyses; spectroscopic ellipsometry for optical properties and thickness determination and nanoindentation to determine the mechanical properties of the a-SiCN:H films. Films deposited at low T{sub s} depict organic like features, while the films deposited at high T{sub s} depict ceramic like features. FTIR and XPS studies reveal that an increases in T{sub s} helps in the elimination of organic moieties and incorporation of nitrogen in the film. Films deposited at T{sub s} of 425 C have an index of refraction (n) of 1.84 and hardness (H) of 14.8 GPa. A decrease in the deposition rate between T{sub s} of 25 and 250 C and increase in deposition rate between T{sub s} of 250 and 425 C indicate that the growth of a-SiCN:H films at lower T{sub s} are surface reaction controlled, while at high temperatures film growth is mass-transport controlled. Based on the experimental results, a potential route for film growth is proposed.

  11. Investigation into the suitability of capillary tubes for microcrystalline testing.

    Science.gov (United States)

    Elie, Leonie E; Baron, Mark G; Croxton, Ruth S; Elie, Mathieu P

    2013-07-01

    A comparison between microcrystalline tests performed on microscope slides and flat capillary tubes with inner diameters ranging from 0.1 to 0.7 mm was carried out to explore the appropriateness of tubes for rapid testing of suspected drugs of abuse in the laboratory as well as in the field. Tests for mephedrone, cocaine, and phencyclidine were chosen as examples to investigate the handling of the capillary tubes, the influence on crystal habit, size, and the effects on the limit of detection. Image stacking software was used to increase the depth of field of micrographs taken from developed microcrystals greatly enhancing the interpretability even months after carrying out the microcrystalline test. Additionally, the potential of seeding capillary tubes with a reagent was studied. Pre-treatment of tubes would allow microcrystalline tests to be carried out quicker and anywhere without the necessity of taking along expensive and hazardous reagents. The sealing of capillary tubes containing developed microcrystalline tests in order to preserve results for a long period of time was successfully done by applying paraffin wax to the open ends. Finally, it was concluded that capillary tubes are suitable vessels for performing microcrystalline tests. The increased portability of the improved set-up allows tests to be safely executed outside laboratories without impairing the quality of the result. Findings were applied to six legal high samples purchased online between May and August 2011. The active ingredients like MDAI as well as cutting agents like caffeine were successfully identified using the microcrystalline test technique in capillary tubes.

  12. Microcrystalline hexagonal tungsten bronze. 2. Dehydration dynamics.

    Science.gov (United States)

    Luca, Vittorio; Griffith, Christopher S; Hanna, John V

    2009-07-06

    Low-temperature (25-600 degrees C) thermal transformations have been studied for hydrothermally prepared, microcrystalline hexagonal tungsten bronze (HTB) phases A(x)WO(3+x/2).zH(2)O as a function of temperature, where A is an exchangeable cation (in this case Na(+) or Cs(+)) located in hexagonal structural tunnels. Thermal treatment of the as-prepared sodium- and cesium-exchanged phases in air were monitored using a conventional laboratory-based X-ray diffractometer, while thermal transformations in vacuum were studied using synchrotron X-ray and neutron diffraction. Concurrent thermogravimetric, diffuse reflectance infrared (DRIFT), and (23)Na and (133)Cs magic angle spinning (MAS) NMR spectroscopic studies have also been undertaken. For the cesium variant, cell volume contraction occurred from room temperature to about 350 degrees C, the regime in which water was "squeezed" out of tunnel sites. This was followed by a lattice expansion in the 350-600 degrees C temperature range. Over the entire temperature range, a net thermal contraction was observed, and this was the result of an anisotropic change in the cell dimensions which included a shortening of the A-O2 bond length. These changes explain why Cs(+) ions are locked into tunnel positions at temperatures as low as 400 degrees C, subsequently inducing a significant reduction in Cs(+) extractability under low pH (nitric acid) conditions. The changing Cs(+) speciation as detected by (133)Cs MAS NMR showed a condensation from multiple Cs sites, presumably associated with differing modes of Cs(+) hydration in the tunnels, to a single Cs(+) environment upon thermal transformation and water removal. While similar lattice contraction was observed for the as-prepared sodium variant, the smaller radius of Na(+) caused it to be relatively easily removed with acid in comparison to the Cs(+) variant. From (23)Na MAS NMR studies of the parent material, complex Na(+) speciation was observed with dehydrated and various

  13. Electrical and optical properties of hydrogenated amorphous silicon-germanium (a-Si1 - xGexH) films prepared by reactive ion beam sputtering

    Science.gov (United States)

    Bhan, Mohan Krishan; Malhotra, L. K.; Kashyap, Subhash C.

    1989-09-01

    Thin films of hydrogenated amorphous silicon-germanium (a-Si1-xGex: H) alloys have been prepared by reactive ion beam sputtering of a composite target of silicon and germanium. The dependence of the deposition rate, conductivity-temperature variation, optical absorption coefficient, refractive index, imaginary part of the dielectric constant, hydrogen content, and infrared (IR) absorption spectra on germanium content (x) are reported and analyzed. For a typical composition—a-Si28Ge72:H (x=0.72), the effect of beam voltage, H2:Ar flow ratio, and substrate temperature on the material properties have also been investigated. For the films prepared with increasing x, the expected behavior of a decrease in both hydrogen content and band gap and an increase in the electrical conductivity have been observed. The films prepared at x>0.80 are found to be more homogeneous than the films deposited at 0.0disorder introduced by the random mixing of Si and Ge atoms in the a-Si1-xGex: H network in the latter case. The a-Si28Ge72:H films exhibiting minimum conductivity (1.7×10-7 Ω-1 cm-1) have been obtained for an H2:Ar flow ratio of 10:1 and a beam voltage and substrate temperature of 1500 V and 300 °C, respectively. These films contain a hydrogen concentration of 10.2 at. % and show an optical band gap of 1.25 eV. The IR studies have shown that a-Si28Ge72:H films prepared both at low beam voltages and at low substrate temperatures show the unusual preferential attachment of hydrogen to Ge rather than to Si.

  14. Potential of ITO nanoparticles formed by hydrogen treatment in PECVD for improved performance of back grid contact crystalline silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Sourav; Mitra, Suchismita; Dhar, Sukanta; Ghosh, Hemanta; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com; Datta, Swapan K.; Saha, Hiranmoy

    2015-09-15

    Highlights: • Indium tin oxide (ITO) nanoparticles as back scatterers in c-Si solar cells. • ITO NP have comparatively low dissipative losses and tunable optical properties. • ITO NP formed by hydrogen plasma treatment on sputtered ITO film. • Enhanced absorption and carrier collection at longer wavelengths due to enhanced light trapping. - Abstract: This paper discusses the prospect of using indium tin oxide (ITO) nanoparticles as back scatterers in crystalline silicon solar cells instead of commonly used metal nanoparticles as ITO nanoparticles have comparatively low dissipative losses and tunable optical properties. ITO nanoparticles of ∼5–10 nm size is developed on the rear side of the solar cell by deposition of ∼5–10 nm thick ITO layer by DC magnetron sputtering followed by hydrogen treatment in PECVD. The silicon solar cell is fabricated in the laboratory using conventional method with grid metal contact at the back surface. Various characterizations like FESEM, TEM, AFM, XRD, EQE and IV characteristics are performed to analyze the morphology, chemical composition, optical characteristics and electrical performance of the device. ITO nanoparticles at the back surface of the solar cell significantly enhances the short circuit current, open circuit voltage and efficiency of the solar cell. These enhancements may be attributed to the increased absorption and carrier collection at longer wavelengths of solar spectrum due to enhanced light trapping by the ITO nanoparticles and surface passivation by the hydrogen treatment of the back surface.

  15. Optical and Electrical Effects of p-type μc-SiOx:H in Thin-Film Silicon Solar Cells on Various Front Textures

    Directory of Open Access Journals (Sweden)

    Chao Zhang

    2014-01-01

    Full Text Available p-type hydrogenated microcrystalline silicon oxide (µc-SiOx:H was developed and implemented as a contact layer in hydrogenated amorphous silicon (a-Si:H single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al, and tunable refractive index make p-type µc-SiOx:H a promising alternative to the commonly used p-type hydrogenated microcrystalline silicon (µc-Si:H contact layers. In this work, p-type µc-SiOx:H layers were fabricated with a conductivity of up to 10−2 S/cm and a Raman crystallinity of above 60%. Furthermore, we present p-type µc-SiOx:H films with a broad range of optical properties (2.1 eV < band gap E04<2.8 eV and 1.6 < refractive index n<2.6. These properties can be tuned by adapting deposition parameters, for example, the CO2/SiH4 deposition gas ratio. A conversion efficiency improvement of a-Si:H solar cells is achieved by applying p-type µc-SiOx:H contact layer compared to the standard p-type µc-Si:H contact layer. As another aspect, the influence of the front side texture on a-Si:H p-i-n solar cells with different p-type contact layers, µc-Si:H and µc-SiOx:H, is investigated. Furthermore, we discuss the correlation between the decrease of Voc and the cell surface area derived from AFM measurements.

  16. Hydrogen in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1991-01-01

    Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed cove

  17. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution

    OpenAIRE

    Bao, Xiao-Qing; Cerqueira, M.F.; Alpuim, P.; Liu, Lifeng

    2015-01-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction. L. F. Liu acknowledges the financial support by the FCT Investigator grant (IF/01595/2014).

  18. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    Science.gov (United States)

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction.

  19. Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Oh, Kyonghwan; Kwon, Oh-Kyong

    2012-03-01

    A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

  20. Experimental study of the hysteresis in hydrogenated amorphous silicon thin-film transistors for an active matrix organic light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Hoon; Shin, Kwang-Sub; Park, Joong-Hyun; Han, Min-Koo [Seoul National University, Seoul (Korea, Republic of)

    2006-01-15

    An experimental scheme for validating the cause of the hysteresis phenomenon in hydrogenated amorphous-silicon-thin-film transistors (a-Si:H TFTs) is reported. A different gate starting voltage to the desired gate voltage has been considered to prove an effect of filling an acceptor-like or donor-like state in the interface. The integration time of the semiconductor parameter analyzer has also been controlled to investigate the effect between the de-trapping rate and hysteresis. The experimental results show that the previous data voltage in the (n-1)th frame affects the OLED current in the (n)th frame.

  1. Observation of a microcrystalline gel in colloids with competing interactions

    NARCIS (Netherlands)

    Zhang, T.; Groenewold, J.; Kegel, W.K.

    2009-01-01

    A stable short-range crystalline structure is observed in colloidal systems with competing short-range attractions and long-range repulsions. We term these structures ‘‘microcrystalline gels’’ as the microcrystals are embedded in a dense disordered network.

  2. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    Energy Technology Data Exchange (ETDEWEB)

    Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

    2015-04-15

    Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

  3. Isolation and characterization of microcrystalline cellulose from oil palm biomass residue.

    Science.gov (United States)

    Mohamad Haafiz, M K; Eichhorn, S J; Hassan, Azman; Jawaid, M

    2013-04-02

    In this work, we successfully isolated microcrystalline cellulose (MCC) from oil palm empty fruit bunch (OPEFB) fiber-total chlorine free (TCF) pulp using acid hydrolysis method. TCF pulp bleaching carried out using an oxygen-ozone-hydrogen peroxide bleaching sequence. Fourier transform infrared (FT-IR) spectroscopy indicates that acid hydrolysis does not affect the chemical structure of the cellulosic fragments. The morphology of the hydrolyzed MCC was investigated using scanning electron microscopy (SEM), showing a compact structure and a rough surface. Furthermore, atomic force microscopy (AFM) image of the surface indicates the presence of spherical features. X-ray diffraction (XRD) shows that the MCC produced is a cellulose-I polymorph, with 87% crystallinity. The MCC obtained from OPEFB-pulp is shown to have a good thermal stability. The potential for a range of applications such as green nano biocomposites reinforced with this form of MCC and pharmaceutical tableting material is discussed.

  4. Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, P.Q. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)], E-mail: robt@sjtu.edu.cn; Zhou, Z.B. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)], E-mail: zbzhou@sjtu.edu.cn; Chan, K.Y. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, Cyberjaya 63100, Selangor (Malaysia); Tang, D.Y.; Cui, R.Q.; Dou, X.M. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

    2008-12-30

    Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B{sub 2}H{sub 6}) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by HWCVD at low substrate temperature of 200 deg. C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B{sub 2}H{sub 6} doping ratio, crystalline volume fraction, optical band gap and dark conductivity.

  5. Analysis of the inner collection efficiency in hybrid silicon solar cells

    OpenAIRE

    Nubile, P.; Torres, P; Hof, Ch.; Fischer, D.

    2008-01-01

    The collection of photogenerated carriers in hybrid silicon solar cells structures were determined by the DICE (dynamic inner collection efficiency) technique. The hybrid solar cells have a microcrystalline n-type emitter and a crystalline p-type base. Cells with amorphous buffers of several thickness and p+ back surface field microcrystalline layers were also studied. Spectral response and reflectivity were measured for each sample in order to obtain the internal spectral response or quantum...

  6. 双氧水浓度对硅纳米线生长的影响%Effects of Hydrogen Peroxide Concentration on the Growth of Silicon Nanowires

    Institute of Scientific and Technical Information of China (English)

    林星星; 沈文忠

    2012-01-01

    The influence of hydrogen peroxide concentration on the morphology, growth rate and photoluminescence of silicon nanowires in a two-step metal assisted chemical etching method is studied. It is shown that the growth rate increases with the increased concentration. The photoluminescence spectra exhibit broad visible emission centered around 685 nm originating from porous silicon structures. Formation of the porous structure is attributed to the renucleation of Ag nanoparticles on the sidewalls of silicon nanowires through diffusion process.%利用两步法金属辅助化学刻蚀(MACE)法制备硅纳米线(SiNWs)样品。研究了双氧水(H2O2)浓度对SiNWs样品形貌、生长速率以及发光特性的影响。发现随着H2O2浓度的增加,SiNWs样品生长速率随之提高,同时出现了位于685nm附近较宽的来源于多孔硅结构的光致发光峰。实验结果表明,多孔硅结构的形成与银离子(Ag+)通过扩散作用在SiNWs样品侧壁重新沉积有关。

  7. Atomic-scale characterization of hydrogenated amorphous-silicon films and devices. Annual subcontract report, 15 April 1994--14 March 1998

    Energy Technology Data Exchange (ETDEWEB)

    Gallagher, A.; Barzen, S.; Childs, M.; Laracuente, A. [National Inst. of Standards and Technology, Boulder, CO (United States)

    1998-06-01

    The research is concerned with improving the electronic properties of hydrogenated amorphous silicon (a-Si:H) films and of photovoltaic (PV) cells that use these films. Two approaches toward this goal are being taken. One is to establish the character of silicon particle growth in the rf glow discharges that are used to make the films and PV cells, and to understand the particle incorporation into the films. The ultimate goal of this effort is to find mitigation techniques that minimize the particle incorporation. During this contract period the authors have developed a novel particle light-scattering technique that provides a detailed and sensitive diagnostic of small (8-60 nm diameter) particles suspended in the discharge. The authors have used this to measure the particle growth rates and densities, versus conditions in pure-silane discharges. The second program is directed toward measuring the electronic properties of thin-film PV cells, as a function of depth within the cell. The approach being taken is to use a scanning tunneling microscope (STM) to measure the depth-dependent electronic properties of cross-sectioned PV cells. During the present period, measurements on single and tandem amorphous silicon cells have been carried out. Using STM current-voltage spectroscopy, these measurements distinguish the boundaries between the highly-conducting and intrinsic layers, as well as the chemical potential versus depth in the cell.

  8. Friction and Wear Performance of Boron Doped, Undoped Microcrystalline and Fine Grained Composite Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Xinchang; WANG Liang; SHEN Bin; SUN Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don’t have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  9. Friction and wear performance of boron doped, undoped microcrystalline and fine grained composite diamond films

    Science.gov (United States)

    Wang, Xinchang; Wang, Liang; Shen, Bin; Sun, Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don't have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  10. Reversibility of silicidation of Ta filaments in HWCVD of thin film silicon

    NARCIS (Netherlands)

    van der Werf, C.H.M.; Li, H. B. T.; Verlaan, V.; Oliphant, C.J.; Bakker, R.; Houweling, Z.S.; Schropp, R.E.I.

    2009-01-01

    If tantalum filaments are used for the hot wire chemical vapour deposition (HWCVD) of thin film silicon, various types of tantalum silicides are formed, depending on the filament temperature. Under deposition conditions employed for device quality amorphous and microcrystalline silicon (Twire ≈ 1750

  11. Investigation of isochronal annealing on the optical properties of HWCVD amorphous silicon nitride deposited at low temperatures and low gas flow rates

    Science.gov (United States)

    Muller, T. F. G.; Jacobs, S.; Cummings, F. R.; Oliphant, C. J.; Malgas, G. F.; Arendse, C. J.

    2015-06-01

    Hydrogenated amorphous silicon nitride (a-SiNx:H) is used as anti-reflection coatings in commercial solar cells. A final firing step in the production of micro-crystalline silicon solar cells allows hydrogen effusion from the a-SiNx:H into the solar cell, and contributes to bulk passivation of the grain boundaries. In this study a-SiNx:H deposited in a hot-wire chemical vapour deposition (HWCVD) chamber with reduced gas flow rates and filament temperature compared to traditional deposition regimes, were annealed isochronally. The UV-visible reflection spectra of the annealed material were subjected to the Bruggeman Effective Medium Approximation (BEMA) treatment, in which a theoretical amorphous semiconductor was combined with particle inclusions due to the structural complexities of the material. The extraction of the optical functions and ensuing Wemple-DeDomenici analysis of the wavelength-dependent refractive index allowed for the correlation of the macroscopic optical properties with the changes in the local atomic bonding configuration, involving silicon, nitrogen and hydrogen.

  12. Surface passivation of c-Si for silicon heterojunction solar cells using high-pressure hydrogen diluted plasmas

    Directory of Open Access Journals (Sweden)

    Dimitrios Deligiannis

    2015-09-01

    Full Text Available In this work we demonstrate excellent c-Si surface passivation by depositing a-Si:H in the high-pressure and high hydrogen dilution regime. By using high hydrogen dilution of the precursor gases during deposition the hydrogen content of the layers is sufficiently increased, while the void fraction is reduced, resulting in dense material. Results show a strong dependence of the lifetime on the substrate temperature and a weaker dependence on the hydrogen dilution. After applying a post-deposition annealing step on the samples equilibration of the lifetime occurs independent of the initial nanostructure.

  13. Structural changes in microcrystalline cellulose in subcritical water treatment.

    Science.gov (United States)

    Tolonen, Lasse K; Zuckerstätter, Gerhard; Penttilä, Paavo A; Milacher, Walter; Habicht, Wilhelm; Serimaa, Ritva; Kruse, Andrea; Sixta, Herbert

    2011-07-11

    Subcritical water is a high potential green chemical for the hydrolysis of cellulose. In this study microcrystalline cellulose was treated in subcritical water to study structural changes of the cellulose residues. The alterations in particle size and appearance were studied by scanning electron microscopy (SEM) and those in the degree of polymerization (DP) and molar mass distributions by gel permeation chromatography (GPC). Further, changes in crystallinity and crystallite dimensions were quantified by wide-angle X-ray scattering and (13)C solid-state NMR. The results showed that the crystallinity remained practically unchanged throughout the treatment, whereas the size of the remaining cellulose crystallites increased. Microcrystalline cellulose underwent significant depolymerization in subcritical water. However, depolymerization leveled off at a relatively high degree of polymerization. The molar mass distributions of the residues showed a bimodal form. We infer that cellulose gets dissolved in subcritical water only after extensive depolymerization.

  14. Crystalline silicon for thin film solar cells. Final report; Kristallines Silizium fuer Duennschichtsolarzellen. Schlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, H.

    2001-07-01

    Thin film solar cells based on silicon are of great interest for cost-effective conversion of solar energy into electric power. In order to reach this goal, intensive research is still necessary, pointing, e.g., to a further enhancement of the conversion efficiency, an improvement of stability and a reduction of the production time. Aim of the project work was the achievement of knowledge on microcrystalline silicon and its application in thin film solar cells by means of a broad research and development program. Material research focused on growth processes of the microcrystalline material, the incorporation and stability of hydrogen, the electronic transport and defects. In particular the transition from amorphous to microcrystalline material which is obtained for the present deposition methods by minor variations of the deposition parameters as well as the enhancement of the deposition rate were intensively studies. Another focus of research aimed toward the development and improvement of zinc oxide films which are of central importance for this type of solar cells for the application as transparent contacts. A comprehensive understanding was achieved. The films were incorporated in thin film solar cells and with conversion efficiencies >8% for single cells (at relatively high deposition rate) and 10% (stable) for tandem cells with amorphous silicon, top values were achieved by international standards. The project achievements serve as a base for a further development of this type of solar cell and for the transfer of this technology to industry. (orig.) [German] Duennschichtsolarzellen auf der Basis von Silizium sind von grossem Interesse fuer eine kostenguenstige Umwandlung von Sonnenenergie in elektrischen Strom. Um dieses Ziel zu erreichen, ist jedoch noch intensive Forschung, u.a. zur weiteren Steigerung des Wirkungsgrades, zur Verbesserung der Stabilitaet und zur Verkuerzung des Produktionsprozesses erforderlich. Ziel der Projektarbeiten war, durch ein

  15. Identification of microcrystalline rocks using thermal emission spectroscopy

    Science.gov (United States)

    Hardgrove, C. J.; Rogers, D.; Glotch, T. D.; Arnold, J. A.

    2015-12-01

    High-silica deposits on Mars have been discovered from orbit (Holden Crater, Mawrth Vallis) and from landed surface missions to both Gusev Crater (Spirit) and Gale Crater (Curiosity). The character of these silica deposits can be used to understand both the depositional environment (i.e. fumarole vs. sinter) and/or diagenetic process. Initial work has shown that, in the case of opaline silica, there are differences in spectral shape that may be related to surface textural features imparted during formation or post-depositional alteration. Due to the increasing importance of understanding microcrystalline deposits on Mars, here, we study the effects of crystal size and surface roughness on thermal infrared emission spectra of micro- and macro-crystalline quartz. The spectra of chert and macro-crystalline quartz have significant differences in both spectral contrast, and in the rounded doublet between ~1000-1250 cm-1, which can shift and appear less rounded in microcrystalline samples. We find that microcrystalline minerals exhibit naturally rough surfaces compared to their macrocrystalline counterparts at the 10 micron scale; and that this roughness causes distinct spectral differences within the Reststrahlen bands. We find that surface roughness, if rough on the scale of the wavelengths where the wavelength-dependent absorption coefficient (k) is large, can cause not only decreased spectral contrast, but also substantial changes in spectral shape. The spectral shape differences are small enough that the composition of the material is still recognizable, but large enough such that a roughness effect could be detected. We find that my studying the thermal infrared spectral character of the sample, it may be possible to make general inferences about microcrystallinity, and thus aid in the potential reconstruction of sedimentary rock diagenesis.

  16. Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model

    Energy Technology Data Exchange (ETDEWEB)

    Hallam, Brett, E-mail: brett.hallam@unsw.edu.au; Abbott, Malcolm; Nampalli, Nitin; Hamer, Phill; Wenham, Stuart [School of Photovoltaics and Renewable Energy Engineering, Level 1 Tyree Energy Technologies Building, University of New South Wales, Kensington, NSW 2052 (Australia)

    2016-02-14

    A three-state model is used to explore the influence of defect formation- and passivation rates of carrier-induced degradation related to boron-oxygen complexes in boron-doped p-type silicon solar cells within a hydrogen-based model. The model highlights that the inability to effectively mitigate carrier-induced degradation at elevated temperatures in previous studies is due to the limited availability of defects for hydrogen passivation, rather than being limited by the defect passivation rate. An acceleration of the defect formation rate is also observed to increase both the effectiveness and speed of carrier-induced degradation mitigation, whereas increases in the passivation rate do not lead to a substantial acceleration of the hydrogen passivation process. For high-throughput mitigation of such carrier-induced degradation on finished solar cell devices, two key factors were found to be required, high-injection conditions (such as by using high intensity illumination) to enable an acceleration of defect formation whilst simultaneously enabling a rapid passivation of the formed defects, and a high temperature to accelerate both defect formation and defect passivation whilst still ensuring an effective mitigation of carrier-induced degradation.

  17. Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Nakazawa, Hideki; Okuno, Saori; Magara, Kohei; Nakamura, Kazuki; Miura, Soushi; Enta, Yoshiharu

    2016-12-01

    We have deposited hydrogenated, silicon/nitrogen-incorporated diamond-like carbon (Si-N-DLC) films by plasma-enhanced chemical vapor deposition using hexamethyldisilazane [((CH3)3Si)2NH; HMDS] as the Si and N source, and compared the tribological performance and thermal stability of the Si-N-DLC films with those of hydrogenated, Si-incorporated DLC (Si-DLC) films prepared using dimethylsilane [SiH2(CH3)2] as the Si source. The deposited films were annealed at 723-873 K in air atmosphere. The friction coefficients of hydrogenated DLC films after annealing significantly increased at the initial stages of friction tests. On the other hand, the friction coefficients of the Si-N-DLC films deposited at an HMDS flow ratio [HMDS/(HMDS+CH4)] of 2.27% remained low after the annealing even at 873 K. We found that the wear rate of the Si-N-DLC film deposited at 2.27% and -1000 V remained almost unchanged after the annealing at 873 K, whereas that of the Si-DLC film with a similar Si fraction deposited at -1000 V significantly increased after the annealing at 773 K.

  18. Production of Starch Based Bioplastic from Cassava Peel Reinforced with Microcrystalline Celllulose Avicel PH101 Using Sorbitol as Plasticizer

    Science.gov (United States)

    Maulida; Siagian, M.; Tarigan, P.

    2016-04-01

    The production of starch based bioplastics from cassava peel reeinforced with microcrystalline cellulose using sorbitol as plasticizer were investigated. Physical properties of bioplastics were determined by density, water uptake, tensile strength and Fourier Transform Infrared Spectroscopy. Bioplastics were prepared from cassava peel starch plasticized using sorbitol with variation of 20; 25; 30% (wt/v of sorbitol to starch) reinforced with microcrystalline celllulose (MCC) Avicel PH101 fillers with range of 0 to 6% (wt/wt of MCC to starch). The results showed improvement in tensile strength with higher MCC content up to 9, 12 mpa compared to non-reinforced bioplastics. This could be mainly attributed to the strong hydrogen bonds between MCC and starch. On the contrary, the addition of MCC decreased the elongation at break, density and water uptake. Fourier Transform Infrared Spectroscopy showed the functional groups of bioplastics, which the majority of O-H groups were found at the bioplastics with reinforcing filler MCC that represented substantial hydrogen bonds. The highest tensile strength value was obtained for bioplastic with MCC content 6% and sorbitol content 20%. With good adhesion between MCC and starch the production of bioplastics could be widely used as a substitute for conventional plastics with more benefits to the environment.

  19. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  20. Non-wood Fibre Production of Microcrystalline Cellulose from Sorghum caudatum: Characterisation and Tableting Properties

    OpenAIRE

    Ohwoavworhua, F. O.; Adelakun, T. A.

    2010-01-01

    The microcrystalline cellulose is an important ingredient in pharmaceutical, food, cosmetic and other industries. In this study, the microcrystalline cellulose, obtained from the stalk of Sorghum caudatum was evaluated for its physical and tableting characteristics with a view to assessing its usefulness in pharmaceutical tableting. The microcrystalline cellulose, obtained from the stalk of Sorghum caudatum, obtained by sodium hydroxide delignification followed by sodium hypochlorite bleachin...

  1. rf excited optical emission spectrum of radicals generated during hot wire chemical vapour deposition for the preparation of microcrystalline silicon thin film%射频激发热丝化学气相沉积制备硅薄膜过程中光发射谱的研究

    Institute of Scientific and Technical Information of China (English)

    李天微; 刘丰珍; 朱美芳

    2011-01-01

    To study the radicals behavior in the hot wire chemical vapour deposition (HWCVD) process for the preparation of microcrystalline Si (μc-Si: H) thin film, a weak radio frequency (rf) power was introduced to excite the radicals generated in HWCVD chamber. The spectrum of fi-excited HWCVD (rf-HWCVD) was obtained by subtracting the emission of hot wires from the spectrum measured by OES. The influence of the rf power on the rf-HWCVD spectrum can be neglected as the rf power density was less than 0. 1 W/cm2. Under the same deposition parameters, the emission spectra for rf-HWCVD and plasma enhanced CVD (PECVD) processes are different. Under the low deposition pressure ( 7.5 Pa), the intensities of Sill * and Hα vary with the hot wire temperature reversely, which is characteristic of HWCVD with high gas dissociation rate and high concentration of atomic H. The ratio of intensity of Hα to Sill * in the emission spectrum of rf-HWCVD varying with deposition pressure is consistent with the crystalline fraction of μc-Si: H film. The results indicate that the optical emission spectroscopy measurement is a suitable method for the investigation of the HWCVD process excited by a weak rf-power.%采用射频(rf)激发,在热丝化学气相沉积(HWCVD)制备微晶硅薄膜的过程中产生发光基元,测量了rf激发HWCVD(rf-HWCVD)的光发射谱,比较了相同工艺条件下rf-HWCVD和等离子体增强CVD(PECVD)的光发射谱,分析了rf功率、热丝温度和沉积气压对rf-HWCVD光发射谱的影响.结果表明,在射频功率<0.1W/cm1时,rf-HWCVD发射光谱反映了HWCVD高的气体分解效率和高浓度原子氢的特点,能够解释气压变化与微晶硅薄膜微结构的关系,是研究HWCVD气相过程的有效方法之一.

  2. Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Shin, Min-Seok; Jo, Yun-Rae; Kwon, Oh-Kyong

    2011-03-01

    In this paper, we propose a driving method for compensating the electrical instability of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) and the luminance degradation of organic light-emitting diode (OLED) devices for large active matrix OLED (AMOLED) displays. The proposed driving method senses the electrical characteristics of a-Si:H TFTs and OLEDs using current integrators and compensates them by an external compensation method. Threshold voltage shift is controlled a using negative bias voltage. After applying the proposed driving method, the measured error of the maximum emission current ranges from -1.23 to +1.59 least significant bit (LSB) of a 10-bit gray scale under the threshold voltage shift ranging from -0.16 to 0.17 V.

  3. Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation

    CERN Document Server

    Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Güney, Durdu Ö

    2014-01-01

    We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

  4. A novel way to enhance hydrogenation resistance of nano-layered titanium silicon carbide by the doping of aluminium

    Science.gov (United States)

    Chen, Chen; Xu, Canhui; Li, Fangzhi; Tan, Yongqiang; Zhang, Haibin; Peng, Shuming

    2016-08-01

    The outstanding irradiation and corrosion resistance of nano-layered Ti3SiC2 make it suitable for cladding materials in advanced nuclear systems. However, Ti3SiC2 shows the relatively poor thermal stability in hydrogen circumstance at high temperature, which is a big obstacle for its nuclear related applications. In this paper, we proposed an effective approach to improve the hydrogenation resistance of Ti3SiC2 by the doping of Al. The experimental results demonstrated that compared to pure Ti3SiC2, Ti3Si0.9Al0.1C2 (TSAC) displayed much better hydrogenation resistance. Through first-principles calculation, it was concluded that the introduction of H interstitial atom made the formation energy of Al vacancy much lower, so Al atoms became much easier to remove from TSAC than Si atoms and Ti atoms. The preferable loss of aluminium from TSAC substrate gave rise to the formation of Al2O3 layer, which improved the hydrogenation resistance of TSAC by inhibiting further reaction between TSAC and hydrogen.

  5. Hydrogen-terminated mesoporous silicon monoliths with huge surface area as alternative Si-based visible light-active photocatalysts

    KAUST Repository

    Li, Ting

    2016-07-21

    Silicon-based nanostructures and their related composites have drawn tremendous research interest in solar energy storage and conversion. Mesoporous silicon with a huge surface area of 400-900 m2 g-1 developed by electrochemical etching exhibits excellent photocatalytic ability and stability after 10 cycles in degrading methyl orange under visible light irradiation, owing to its unique mesoporous network, abundant surface hydrides and efficient light harvesting. This work showcases the profound effects of surface area, crystallinity, pore topology on charge migration/recombination and mass transportation. Therein the ordered 1D channel array has outperformed the interconnected 3D porous network by greatly accelerating the mass diffusion and enhancing the accessibility of the active sites on the extensive surfaces. © 2016 The Royal Society of Chemistry.

  6. Data supporting the role of electric field and electrode material on the improvement of the ageing effects in hydrogenated amorphous silicon solar cells.

    Science.gov (United States)

    Scuto, Andrea; Valenti, Luca; Pierro, Silvio; Foti, Marina; Gerardi, Cosimo; Battaglia, Anna; Lombardo, Salvatore

    2015-09-01

    Hydrogenated amorphous Si (a-Si:H) solar cells are strongly affected by the well known Staebler-Wronski effect. This is a worsening of solar cell performances under light soaking which results in a substantial loss of cell power conversion efficiency compared to time zero performance. It is believed not to be an extrinsic effect, but rather a basic phenomenon related to the nature of a-Si:H and to the stability and motion of H-related species in the a-Si:H lattice. This work has been designed in support of the research article entitled "Role of electric field and electrode material on the improvement of the ageing effects in hydrogenated amorphous silicon solar cells" in Solar Energy Materials & Solar Cells (Scuto et al. [1]), which discusses an electrical method based on reverse bias stress to improve the solar cell parameters, and in particular the effect of temperature, electric field intensity and illumination level as a function of the stress time. Here we provide a further set of the obtained experimental data results.

  7. Compactibility of agglomerated mixtures of calcium carbonate and microcrystalline cellulose.

    Science.gov (United States)

    Garzón Serra, María de Lourdes; Villafuerte Robles, Leopoldo

    2003-06-04

    The tablet tensile strength (T) of agglomerated mixtures of microcrystalline cellulose-Avicel PH 102 (MC), calcium carbonate (CC) and polyvinylpyrrolidone (Povidone, PVP), lubricated with magnesium stearate (MS), and formed under a compaction pressure (P(c)) ranging up to 618MPa has been determined. The compactibility was defined through: ln(-ln(1-T/T(max)))=Slope x lnP(c)+Intercept. MC/CC mixtures added of an agglutinant, before and after lubrication, show an important positive effect on their tablet tensile strength compared to a lineal relationship. This positive effect becomes smaller with decreasing compaction pressures. By different mixing methods, the higher the mixing efficiency the higher the compactibility, following the order: spray-dried>wet massing>tumble mixing. The compactibility of MC/CC/PVP spray-dried mixtures with calcium carbonate content from 20 to 60% was equal to or greater than that of pure microcrystalline cellulose. After lubrication with 2% MS the compactibility decreased, only the mixture with the maximal tablet tensile strength attained the tensile strength of pure microcrystalline cellulose. The presence of the binder, the lubricant and higher compaction pressures allow the accommodation of higher calcium carbonate proportions in the mixtures, at the maximal tablet tensile strength of the series. The lubricant decreases in a greater extent the compactibility of mixtures with a continuous phase of MC/PVP than that of CC/PVP. This is attributed to the plastic behavior of the MC/PVP continuous phase compared to a calcium carbonate continuous phase able to disrupt the Povidone and the possible lubricant coatings allowing a stronger interparticle interaction.

  8. Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process

    KAUST Repository

    Sliz, Rafal

    2012-06-01

    Microcrystalline silicon (mc-Si) lms deposited using a Plasma Enhanced Chemical Vapour Deposition (PECVD) process constitute an important material for manufacturing low-cost, large-area thin-lm devices, such as solar cells or thin-lm transistors. Although the deposition of electronic-grade mc-Si using the PECVD process is now well established, the high substrate temperature required (~400°C) does not lend itself to electronic devices with exible form factors fabricated on low-cost plastic substrates. In this study, we rst investigated an intrinsic mc-Si layer deposited at plastic-compatible substrate temperatures (~150°C) by characterising the properties of the lm and then evaluated its applicability to p-i-n solar cells though device characterisation. When the performance of the solar cell was correlated with lm properties, it was found that, although it compared unfavourably with mc-Si deposited at higher temperatures, it remained a very promising option. Nonetheless, further development is required to increase the overall eciency of mc-Si exible solar cells.

  9. Iron Oxide Nanoparticles Employed as Seeds for the Induction of Microcrystalline Diamond Synthesis

    Directory of Open Access Journals (Sweden)

    Resto Oscar

    2008-01-01

    Full Text Available AbstractIron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. X-ray diffraction, visible, and ultraviolet Raman Spectroscopy, energy-filtered transmission electron microscopy , electron energy-loss spectroscopy, and X-ray photoelectron spectroscopy (XPS were employed to study the carbon bonding nature of the films and to analyze the carbon clustering around the seed nanoparticles leading to diamond synthesis. The results indicate that iron oxide nanoparticles lose the O atoms, becoming thus active C traps that induce the formation of a dense region of trigonally and tetrahedrally bonded carbon around them with the ensuing precipitation of diamond-type bonds that develop into microcrystalline diamond films under chemical vapor deposition conditions. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

  10. Comparison of microcrystalline characterization results from oil palm midrib alpha cellulose using different delignization method

    Science.gov (United States)

    Yuliasmi, S.; Pardede, T. R.; Nerdy; Syahputra, H.

    2017-03-01

    Oil palm midrib is one of the waste generated by palm plants containing 34.89% cellulose. Cellulose has the potential to produce microcrystalline cellulose can be used as an excipient in tablet formulations by direct compression. Microcrystalline cellulose is the result of a controlled hydrolysis of alpha cellulose, so the alpha cellulose extraction process of oil palm midrib greatly affect the quality of the resulting microcrystalline cellulose. The purpose of this study was to compare the microcrystalline cellulose produced from alpha cellulose extracted from oil palm midrib by two different methods. Fisrt delignization method uses sodium hydroxide. Second method uses a mixture of nitric acid and sodium nitrite, and continued with sodium hydroxide and sodium sulfite. Microcrystalline cellulose obtained by both method was characterized separately, including organoleptic test, color reagents test, dissolution test, pH test and determination of functional groups by FTIR. The results was compared with microcrystalline cellulose which has been available on the market. The characterization results showed that microcrystalline cellulose obtained by first method has the most similar characteristics to the microcrystalline cellulose available in the market.

  11. AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H

    Energy Technology Data Exchange (ETDEWEB)

    Rojas-Lopez, M.; Orduna-Diaz, A.; Delgado-Macuil, R. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Olvera-Hernandez, J. [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Navarro-Contreras, H.; Vidal, M.A.; Saucedo, N.; Mendez-Garcia, V.H. [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, San Luis Potosi, S.L.P. 78100 (Mexico)

    2007-04-15

    Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si:H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm{sup -1} associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm{sup -1} with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Free-carrier contribution to all-optical switching in Mie-resonant hydrogenated amorphous silicon nanodisks

    Science.gov (United States)

    Vabishchevich, Polina P.; Shorokhov, Alexander S.; Shcherbakov, Maxim R.; Fedyanin, Andrey A.

    2016-03-01

    Conventionally, all-optical switching devices made out from bulk silicon and other semiconductors are limited by free-carrier relaxation time which spans from picoseconds to microseconds. In this work, we discuss the possibility to suppress the undesired long free-carrier relaxation in subwavelength dielectric nanostructures exhibiting localized magnetic Mie resonances. Numerical calculations show the unsymmetrical modification of the transmittance spectra of the nanodisks due the free carriers photo-injection. Such a spectral dependance allows to control temporal response of the nanostructure by varying the laser pulse spectum.

  13. Some historical remarks on microcrystalline arthritis (gout and chondrocalcinosis

    Directory of Open Access Journals (Sweden)

    G. Pasero

    2012-01-01

    Full Text Available The history of microcrystalline arthritis only began in 1961 when Daniel McCarty and Joseph Lee Hollander demonstrated the presence of sodium monourate crystals in the synovial fluid of gouty patients. However, gout is a historical disease, thanks to the descriptions of Hippocrates, Caelius Aurelianus, Soranus of Ephesus and Araeteus of Cappadocia. The relationship between hyperuricemia and gout was first documented in the nineteenth century by Alfred Baring Garrod, who demonstrated deposits of uric acid crystals on a linen thread held dipped in acidified blood (the so-called “thread method”. Gout has always been considered a prerogative of the moneyed classes (arthritis divitum, and history is full of famous gouty personalities, including kings, emperors, popes, commanders, politicians, artists, writers, philosophers and scientists. Another form of microcrystalline arthritis, chondrocalcinosis, was identified as being a rheumatic disorder different from gout in the 1960s. As a specific clinical entity, it was first identified in 1958 by Dušan Žitnˇan and Štefan Sit’aj in a few Slovak families.

  14. Characterization of Epoxy Composites Reinforced with Wax Encapsulated Microcrystalline Cellulose

    Directory of Open Access Journals (Sweden)

    Yuanfeng Pan

    2016-11-01

    Full Text Available The effect of paraffin wax encapsulated microcrystalline cellulose (EMC particles on the mechanical and physical properties of EMC/epoxy composites were investigated. It was demonstrated that the compatibility between cellulose and epoxy resin could be maintained due to partial encapsulation resulting in an improvement in epoxy composite mechanical properties. This work was unique because it was possible to improve the physical and mechanical properties of the EMC/epoxy composites while encapsulating the microcrystalline cellulose (MCC for a more homogeneous dispersion. The addition of EMC could increase the stiffness of epoxy composites, especially when the composites were wet. The 1% EMC loading with a 1:2 ratio of wax:MCC demonstrated the best reinforcement for both dry and wet properties. The decomposition temperature of epoxy was preserved up to a 5% EMC loading and for different wax:MCC ratios. An increase in wax encapsulated cellulose loading did increase water absorption but overall this absorption was still low (<1% for all composites.

  15. Adsorption behavior and current-voltage characteristics of CdSe nanocrystals on hydrogen-passivated silicon

    OpenAIRE

    2002-01-01

    Using scanning tunneling microscopy and spectroscopy we have studied both the geometric distribution and the conduction properties of organic shell capped CdSe nanocrystals adsorbed on hydrogen-passivated Si(100). At submonolayer concentrations, the nanocrystal distribution on the surface was found to be highly nonhomogeneous, with an aggregation of most of the nanocrystals into islands of monolayer thickness. I-V spectra collected on nanocrystals adsorbed on n- and p-type substrates showed a...

  16. Scientific Opinion on the re-evaluation of microcrystalline wax (E 905 as a food additive

    Directory of Open Access Journals (Sweden)

    EFSA Panel on Food Additives and Nutrient Sources added to Food (ANS

    2013-04-01

    Full Text Available Following a request from the European Commission, the Panel on Food Additives and Nutrient Sources added to Food (ANS was asked to deliver a scientific opinion on microcrystalline wax (E 905 when used as a food additive. Microcrystalline wax (E 905 is authorised quantum satis as a surface treatment agent on non-chocolate confectionery, chewing gum and decorations, coatings and fillings, except fruit based fillings. It is also permitted as a surface treatment of melons, papaya, mango and avocado. The substance was evaluated by the Scientific Committee on Food (SCF in 1990 and 1995 and by the Joint FAO/WHO Expert Committee on Food Additives (JECFA, the latest in 1995. The JECFA established a group ADI of 20 mg/kg bw/day for mineral oils, paraffins and microcrystalline waxes. The Panel noted that all mineral oil products accumulated in tissues in a dose- and time-dependent manner with the exception of microcrystalline waxes. The Panel concluded that there is no concern for genotoxicity from microcrystalline wax (E 905. The Panel also considered that the available toxicity studies with mineral hydrocarbons, closely related from a chemical point of view with microcrystalline waxes, consistently reported no effects of concern associated with the intake of microcrystalline wax. The Panel further concluded that since no long-term toxicity and carcinogenicity studies with microcrystalline wax E 905 were available, no ADI could be established. The Panel also concluded that the conservative exposure estimates to microcrystalline wax (E 905 from its use at maximum permitted level (following quantum satis rules, resulted in a sufficient margin of safety compared to the NOAEL established by the Panel for the closely related high viscosity mineral oils, and therefore the use microcrystalline wax (E 905 as a food additive with the currently authorised uses would not be of safety concern.

  17. Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Photovoltaic Cells: Final Subcontract Report, 27 November 2002--31 March 2005

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, J. D.

    2005-11-01

    A major effort during this subcontract period has been to evaluate the microcrystalline Si material under development at United Solar Ovonics Corporation (USOC). This material is actually a hydrogenated nanocrystalline form of Si and it will be denoted in this report as nc-Si:H. Second, we continued our studies of the BP Solar high-growth samples. Third, we evaluated amorphous silicon-germanium alloys produced by the hot-wire chemical vapor deposition growth process. This method holds some potential for higher deposition rate Ge alloy materials with good electronic properties. In addition to these three major focus areas, we examined a couple of amorphous germanium (a-Ge:H) samples produced by the ECR method at Iowa State University. Our studies of the electron cyclotron resonance a-Ge:H indicated that the Iowa State a Ge:H material had quite superior electronic properties, both in terms of the drive-level capacitance profiling deduced defect densities, and the transient photocapacitance deduced Urbach energies. Also, we characterized several United Solar a Si:H samples deposited very close to the microcrystalline phase transition. These samples exhibited good electronic properties, with midgap defect densities slightly less than 1 x 1016 cm-3 in the fully light-degraded state.

  18. Research on High-Bandgap Materials and Amorphous Silicon-Based Solar Cells, Final Technical Report, 15 May 1994-15 January 1998

    Energy Technology Data Exchange (ETDEWEB)

    Schiff, E. A.; Gu, Q.; Jiang, L.; Lyou, J.; Nurdjaja, I.; Rao, P. (Department of Physics, Syracuse University)

    1998-12-28

    This report describes work performed by Syracuse University under this subcontract. Researchers developed a technique based on electroabsorption measurements for obtaining quantitative estimates of the built-in potential Vbi in a-Si:H-based heterostructure solar cells incorporating microcrystalline or a-SiC:H p layers. Using this new electroabsorption technique, researchers confirmed previous estimates of Vbi {yields} 1.0 V in a-Si:H solar cells with ''conventional'' intrinsic layers and either microcrystalline or a-SiC:H p layers. Researchers also explored the recent claim that light-soaking of a-Si:H substantially changes the polarized electroabsorption associated with interband optical transitions (and hence, not defect transitions). Researchers confirmed measurements of improved (5') hole drift mobilities in some specially prepared a-Si:H samples. Disturbingly, solar cells made with such materials did not show improved efficiencies. Researchers significantly clarified the relationship of ambipolar diffusion-length measurements to hole drift mobilities in a-Si:H, and have shown that the photocapacitance measurements can be interpreted in terms of hole drift mobilities in amorphous silicon. They also completed a survey of thin BP:H and BPC:H films prepared by plasma deposition using phosphine, diborane, trimethylboron, and hydrogen as precursor gases.

  19. Degradation mechanism of hydrogen-terminated porous silicon in the presence and in the absence of light

    Science.gov (United States)

    Xu, Hangzhou; Pei, Haiyan; Xiao, Hongdi; Hu, Wenrong

    2015-06-01

    Si is well-known semiconductor that has a fundamental bandgap energy of 1.12 eV. Its photogenerated electrons in the conduction band can react with the ubiquitous oxygen molecules to yield ṡO2- radicals, but the photogenerated holes in the valance band can't interact with OH- to produce ṡOH radicals. In this paper, we study the degradation of methyl orange (MO) by hydrogen-terminated porous Si (H-PSi) in the presence and in the absence of light. The absorption spectra of the degraded MO solutions indicated that the H-PSi had superior degradation ability. In the dark, the reduction of dye occurs simply by hydrogen transfer. Under room light, however, some of the dye molecules can be reduced by hydrogen transfer first and then decomposed in the conduction and valance bands. This result should be ascribed to its wide band gap energies centered at 1.79-1.94 eV.

  20. Degradation mechanism of hydrogen-terminated porous silicon in the presence and in the absence of light

    Directory of Open Access Journals (Sweden)

    Hangzhou Xu

    2015-06-01

    Full Text Available Si is well-known semiconductor that has a fundamental bandgap energy of 1.12 eV. Its photogenerated electrons in the conduction band can react with the ubiquitous oxygen molecules to yield ⋅O2− radicals, but the photogenerated holes in the valance band can’t interact with OH− to produce ⋅OH radicals. In this paper, we study the degradation of methyl orange (MO by hydrogen-terminated porous Si (H-PSi in the presence and in the absence of light. The absorption spectra of the degraded MO solutions indicated that the H-PSi had superior degradation ability. In the dark, the reduction of dye occurs simply by hydrogen transfer. Under room light, however, some of the dye molecules can be reduced by hydrogen transfer first and then decomposed in the conduction and valance bands. This result should be ascribed to its wide band gap energies centered at 1.79-1.94 eV.

  1. Effects of roughness and temperature on low-energy hydrogen positive and negative ion reflection from silicon and carbon surfaces.

    Science.gov (United States)

    Tanaka, N; Kato, S; Miyamoto, T; Nishiura, M; Tsumori, K; Matsumoto, Y; Kenmotsu, T; Okamoto, A; Kitajima, S; Sasao, M; Wada, M; Yamaoka, H

    2014-02-01

    Angle-resolved energy distribution functions of positive and negative hydrogen ions produced from a rough-finished Si surface under 1 keV proton irradiation have been measured. The corresponding distribution from a crystalline surface and a carbon surface are also measured for comparison. Intensities of positive and negative ions from the rough-finished Si are substantially smaller than those from crystalline Si. The angular distributions of these species are broader for rough surface than the crystalline surface. No significant temperature dependence for positive and negative ion intensities is observed for all samples in the temperature range from 300 to 400 K.

  2. Melt-processed poly(vinyl alcohol) composites filled with microcrystalline cellulose from waste cotton fabrics.

    Science.gov (United States)

    Sun, Xunwen; Lu, Canhui; Liu, Yong; Zhang, Wei; Zhang, Xinxing

    2014-01-30

    Waste cotton fabrics (WCFs), which are generated in a large volume from the textile industry, have caused serious disposal problem. Recycling WCFs into value-added products is one of the vital measures for both environmental and economic benefits. In this study, microcrystalline cellulose (MCC) was prepared by acid hydrolysis of WCFs, and used as reinforcement for melt-processed poly(vinyl alcohol) (PVA) with water and formamide as plasticizer. The microstructure and mechanical properties of the melt-processed PVA/MCC composites were characterized by Fourier transform infrared spectra, Raman spectra, differential scanning calorimetry, thermal gravimetric analysis, X-ray diffraction, tensile tests and dynamic mechanical analysis. The results indicated that MCC could establish strong interfacial interaction with PVA through hydrogen bonding. As a result, the crystallization of PVA was confined and its melting temperature was decreased, which was beneficial for the melt-processing of PVA. Compared with the unfilled PVA, the PVA/MCC composites exhibited remarkable improvement in modulus and tensile strength.

  3. Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon

    Science.gov (United States)

    Stübner, R.; Scheffler, L.; Kolkovsky, Vl.; Weber, J.

    2016-05-01

    In the present study, we discuss the origin of two dominant deep levels (E42 and E262) observed in n-type Si, which is subjected to hydrogenation by wet chemical etching or a dc H-plasma treatment. Their activation enthalpies determined from Laplace deep level transient spectroscopy measurements are EC-0.06 eV (E42) and EC-0.51 eV (E262). The similar annealing behavior and identical depth profiles of E42 and E262 correlate them with two different charge states of the same defect. E262 is attributed to a single acceptor state due to the absence of the Poole-Frenkel effect and the lack of a capture barrier for electrons. The emission rate of E42 shows a characteristic enhancement with the electric field, which is consistent with the assignment to a double acceptor state. In samples with different carbon and hydrogen content, the depth profiles of E262 can be explained by a defect with one H-atom and one C-atom. From a comparison with earlier calculations [Andersen et al., Phys. Rev. B 66, 235205 (2002)], we attribute E42 to the double acceptor and E262 to the single acceptor state of the CH1AB configuration, where one H atom is directly bound to carbon in the anti-bonding position.

  4. Novel Silicon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Novel silicon nanotubes with inner-diameter of 60-80 nm was prepared using hydrogen-added dechlorination of SiCl4 followed by chemical vapor deposition (CVD) on a NixMgyO catalyst. The TEM observation showed that the suitable reaction temperature is 973 K for the formation of silicon nanotubes. Most of silicon nanotubes have one open end and some have two closed ends. The shape ofnanoscale silicon, however, is a micro-crystal type at 873 K, a rod or needle type at 993 K and an onion-type at 1023 K, respectively.

  5. Optimization of plasma parameters for the production of silicon nano-crystals

    CERN Document Server

    Chaabane, N; Vach, H; Cabarrocas, P R I

    2003-01-01

    We use silane-hydrogen plasmas to synthesize silicon nano-crystals in the gas phase and thermophoresis to collect them onto a cooled substrate. To distinguish between nano-crystals formed in the plasma and those grown on the substrate, as a result of surface and subsurface reactions, we have simultaneously deposited films on a conventional substrate heated at 250 deg. C and on a second substrate cooled down to 90 deg. C. A series of samples deposited at various discharge pressures, in the range of 400 mTorr to 1.2 Torr, have been characterized by Raman spectroscopy and ellipsometry. At low pressure (400-500 mTorr), the films are amorphous on the cold substrate and micro-crystalline on the hot one. As pressure increases, gas phase reactions lead to the formation of nano-crystalline particles which are attracted by the cold substrate due to thermophoresis. Consequently, we obtain nano-crystalline silicon thin films on the cold substrate and amorphous thin films on the heated one in the pressure range of 600-900...

  6. The magnetic properties of powdered and compacted microcrystalline permalloy

    Science.gov (United States)

    Kollár, P.; Olekšáková, D.; Füzer, J.; Kováč, J.; Roth, S.; Polański, K.

    2007-03-01

    The aim of this work is to investigate the magnetic properties of powdered and compacted microcrystalline Ni-Fe (81 wt% of Ni) permalloy. It was found by investigating the influence of mechanical milling on the magnetic properties of powder samples prepared by milling of the ribbon that the alloy remains a solid solution with stable structure during the whole milling process. With decreasing particle size the rotation of magnetization vector gradually becomes dominant magnetization process and thus coercivity increases. After compaction of the powder by uniaxial hot pressing the magnetic contact between powder particles is recreated and for resulting bulk the displacement of the domain walls becomes dominant magnetization process with coercivity of 11 A/m (comparable with the coercivity of conventional permalloy).

  7. Dielectric barrier discharge plasma pretreatment on hydrolysis of microcrystalline cellulose

    Science.gov (United States)

    Fangmin, HUANG; Zhouyang, LONG; Sa, LIU; Zhenglong, Qin

    2017-04-01

    Dielectric barrier discharge (DBD) plasma was used as a pretreatment method for downstream hydrolysis of microcrystalline cellulose (MCC). The degree of polymerization (DP) of MCC decreased after it was pretreated by DBD plasma under a carrier gas of air/argon. The effectiveness of depolymerization was found to be influenced by the crystallinity of MCC when under the pretreatment of DBD plasma. With the addition of tert-butyl alcohol in the treated MCC water suspension solution, depolymerization effectiveness of MCC was inhibited. When MCC was pretreated by DBD plasma for 30 min, the total reducing sugar concentration (TRSC) and liquefaction yield (LY) of pretreated-MCC (PMCC) increased by 82.98% and 34.18% respectively compared with those for raw MCC.

  8. Dielectric barrier discharge plasma pretreatment on hydrolysis of microcrystalline cellulose

    Science.gov (United States)

    Huang, Fangmin; Long, Zhouyang; Liu, Sa; Qin, Zhenglong

    2017-04-01

    Dielectric barrier discharge (DBD) plasma was used as a pretreatment method for downstream hydrolysis of microcrystalline cellulose (MCC). The degree of polymerization (DP) of MCC decreased after it was pretreated by DBD plasma under a carrier gas of air/argon. The effectiveness of depolymerization was found to be influenced by the crystallinity of MCC when under the pretreatment of DBD plasma. With the addition of tert-butyl alcohol in the treated MCC water suspension solution, depolymerization effectiveness of MCC was inhibited. When MCC was pretreated by DBD plasma for 30 min, the total reducing sugar concentration (TRSC) and liquefaction yield (LY) of pretreated-MCC (PMCC) increased by 82.98% and 34.18% respectively compared with those for raw MCC.

  9. Percutaneous microcrystalline chitosan application for sealing arterial puncture sites.

    Science.gov (United States)

    Hoekstra, A; Struszczyk, H; Kivekäs, O

    1998-08-01

    Arterial catheterization is one of the most frequently performed inpatient diagnostic and therapeutic procedures in the development countries. Complications may occur after any catheterization from inadequate hemostasis, particularly in the setting of aggressive anticoagulation. This study suggests that microcrystalline chitosan (MCCh) sealant installation via an arterial sheath at the completion of catheterization may improve hemostasis. Results using MCCh in eight heparinized dogs documented significant reductions in manual compression time (P = 0.016) of the artery after withdrawal of both the sheath introducer and catheter. Comparative results were found in rats, wherein a created wound in the aorta could be sealed relatively quickly and easily. The biodegradability, optimalization, and a better pharmaceutical formulation of this potential hemostatic agent require further studies.

  10. The influence of charge effect on the growth of hydrogenated amorphous silicon by the hot-wire chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Q.; Nelson, B.P.; Iwaniczko, E.; Mahan, A.H.; Crandall, R.S.; Benner, J. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    The authors observe at lower substrate temperatures that the scatter in the dark conductivity on hydrogenated amorphous silicon (a-Si:H) films grown on insulating substrates (e.g., Corning 7059 glass) by the hot-wire chemical vapor deposition technique (HWCVD) can be five orders of magnitude or more. This is especially true at deposition temperatures below 350 C. However, when the authors grow the same materials on substrates with a conductive grid, virtually all of their films have acceptable dark conductivity (< 5 {times} 10{sup {minus}10} S/cm) at all deposition temperatures below 425 C. This is in contrast to only about 20% of the materials grown in this same temperature range on insulating substrates having an acceptable dark conductivity. The authors estimated an average energy of 5 eV electrons reaching the growing surface in vacuum, and did additional experiments to see the influence of both the electron flux and the energy of the electrons on the film growth. Although these effects do not seem to be important for growing a-Si:H by HWCVD on conductive substrates, they help better understand the important parameters for a-Si:H growth, and thus, to optimize these parameters in other applications of HWCVD technology.

  11. Analysis of intermediate pressure SiH4/He capacitively coupled plasma for deposition of an amorphous hydrogenated silicon film in consideration of thermal diffusion effects

    Science.gov (United States)

    Kim, Ho Jun; Lee, Hae June

    2017-08-01

    To achieve rapid, uniform deposition of an amorphous hydrogenated silicon (a-Si:H) film, a capacitively coupled plasma (CCP) is often used at an intermediate pressure (>100 Pa), with a silane (SiH4)-based mixture. At these pressures, heavy particle interactions (such as ion-ion, ion-neutral, and neutral-neutral reactions) contribute significantly to the formation of precursor radicals. By adding a consideration of the thermal diffusion effects to the neutral transport equation, the chemical processes have been numerically analyzed with variation in the number fraction of SiH4 and electrode spacing using a two-dimensional fluid model of radio frequency discharges in a cylindrically symmetric CCP reactor. The non-uniformity of the deposition rate profiles increases consistently as electrode spacing increases, although the non-uniformity of the plasma parameters decreases with the increase of electrode spacing. The simulated deposition rate profiles match well with the experimental data for the change of electrode spacing. Based on the validation of our model, we propose predictive designs to potentially improve the reactor and process by modifying the thermal and electrical surface conditions.

  12. Adsorption behavior and current-voltage characteristics of CdSe nanocrystals on hydrogen-passivated silicon

    DEFF Research Database (Denmark)

    Walzer, Karsten; Quaade, Ulrich; Ginger, D.S.

    2002-01-01

    Using scanning tunneling microscopy and spectroscopy we have studied both the geometric distribution and the conduction properties of organic shell capped CdSe nanocrystals adsorbed on hydrogen-passivated Si(100). At submonolayer concentrations, the nanocrystal distribution on the surface was found...... found that the current through the MIS junction is limited by the nanocrystals only in one bias direction, while in the other bias direction the current is limited by the semiconducting substrate. This property may be of relevance for the construction of hybrid electronic devices combining semiconductor...... a widening of the surface band gap by 1 eV with respect to the gap of the substrate, while a significant narrowing of the gap was observed for nanocrystals on p-Si:H. This experimental result could be explained by modeling the system as a metal-insulator-semiconductor (MIS) diode. Using this model we have...

  13. Investigation of two-dimensional electron systems at low density on hydrogen-terminated silicon (111) surface

    Science.gov (United States)

    Hu, Binhui; Kott, Tomasz M.; Kane, B. E.

    2013-03-01

    Two-dimensional electron systems (2DESs) on hydrogen-terminated Si(111) surfaces show very high quality. The peak electron mobility of 325,000 cm2/Vs can be reached at T =90 mK and 2D electron density n2 d = 4 . 15 ×1011 cm-2, and the device shows the fractional quantum hall effect[1]. 2DESs on H-Si(111) at lower densities may exhibit new physics, because both valley degeneracy and effective mass lead to a large Wigner-Seitz radius rs at accessible densities. In these devices, phosphorus ion implantation is used to defined the contacts to the 2DESs[2]. The contacts themselves work at low temperature. However, at lower 2D electron density (ion implantation annealing parameters are adjusted to mitigate the issue. Possible measurement technique is also explored to overcome the problem.

  14. Development of a very fast spectral response measurement system for analysis of hydrogenated amorphous silicon solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, J.A., E-mail: jose.rodriguez@tsolar.eu [Dept. Technology, Development and Innovation, T-Solar Global S.A., Parque Tecnologico de Galicia, Avda. de Vigo 5, E-32900 San Cibrao das Vinas (Ourense) (Spain); Fortes, M. [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain); Alberte, C.; Vetter, M.; Andreu, J. [Dept. Technology, Development and Innovation, T-Solar Global S.A., Parque Tecnologico de Galicia, Avda. de Vigo 5, E-32900 San Cibrao das Vinas (Ourense) (Spain)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Spectral response equipment for measuring a-Si:H solar cells in a few seconds. Black-Right-Pointing-Pointer Equipment based on 16 LEDs with simultaneous illumination of the solar cell. Black-Right-Pointing-Pointer The current generated by each LED is analyzed by a Fast Fourier Transform. Black-Right-Pointing-Pointer Cheap equipment without lock-in technology for the current measurement. Black-Right-Pointing-Pointer Measurement error vs. conventional measurement less than 1% in J{sub sc}. - Abstract: An important requirement for a very fast spectral response measurement system is the simultaneous illumination of the solar cell at multiple well defined wavelengths. Nowadays this can be done by means of light emitting diodes (LEDs) available for a multitude of wavelengths. For the purpose to measure the spectral response (SR) of amorphous silicon solar cells a detailed characterization of LEDs emitting in the wavelength range from 300 nm to 800 nm was performed. In the here developed equipment the LED illumination is modulated in the frequency range from 100 Hz to 200 Hz and the current generated by each LED is analyzed by a Fast Fourier Transform (FFT) to determine the current component corresponding to each wavelength. The equipment provides a signal to noise ratio of 2-4 orders of magnitude for individual wavelengths resulting in a precise measurement of the SR over the whole wavelength range. The difference of the short circuit current determined from the SR is less than 1% in comparison to a conventional system with monochromator.

  15. Microcrystalline sodium tungsten bronze nanowire bundles as efficient visible light-responsive photocatalysts.

    Science.gov (United States)

    Wang, Lei; Zhan, Jinhua; Fan, Weiliu; Cui, Guanwei; Sun, Honggang; Zhuo, Linhai; Zhao, Xian; Tang, Bo

    2010-12-14

    Microcrystalline sodium tungsten bronze nanowire bundles were obtained via a facile hydrothermal synthesis, and were applied in water purification as visible-light-driven photocatalysts for the first time.

  16. Hydrogenated amorphous silicon oxide (a-SiOx:H) single junction solar cell with 8.8% initial efficiency by reducing parasitic absorptions

    Science.gov (United States)

    Kim, Do Yun; Guijt, Erwin; van Swaaij, René A. C. M. M.; Zeman, Miro

    2017-04-01

    Hydrogenated amorphous silicon oxide (a-SiOx:H) solar cells have been successfully implemented to multi-junction thin film silicon solar cells. The efficiency of these solar cells, however, has still been below that of state-of-the-art solar cells mainly due to the low Jsc of the a-SiOx:H solar cells and the unbalanced current matching between sub-cells. In this study, we carry out optical simulations to find the main optical losses for the a-SiOx:H solar cell, which so far was mainly optimized for Voc and fill-factor (FF). It is observed that a large portion of the incident light is absorbed parasitically by the p-a-SiOx:H and n-a-SiOx:H layers, although the use of these layers leads to the highest Voc × FF product. When a more transparent and conductive p-nc-SiOx:H layer is substituted for the p-a-SiOx:H layer, the parasitic absorption loss at short wavelengths is notably reduced, leading to higher Jsc. However, this gain in Jsc by the use of the p-nc-SiOx:H compromises the Voc. When replacing the n-a-SiOx:H layer for an n-nc-SiOx:H layer that has low n and k values, the plasmonic absorption loss at the n-nc-SiOx:H/Ag interfaces and the parasitic absorption in the n-nc-SiOx:H are substantially reduced. Implementation of this n-nc-SiOx:H leads to an increase of the Jsc without a drop of the Voc and FF. When implementing a thinner p-a-SiOx:H layer, a thicker i-a-SiOx:H layer, and an n-nc-SiOx:H layer, a-SiOx:H solar cells with not only high Jsc but also high Voc and FF can be fabricated. As a result, an 8.8% a-SiOx:H single junction solar cell is successfully fabricated with a Voc of 1.02 V, a FF of 0.70, and a Jsc of 12.3 mA/cm2, which is the highest efficiency ever reported for this type of solar cell.

  17. Physicotechnical, spectroscopic and thermogravimetric properties of powdered cellulose and microcrystalline cellulose derived from groundnut shells

    OpenAIRE

    Chukwuemeka P. Azubuike; Jimson O. Odulaja; Augustine O Okhamafe

    2012-01-01

    α-Cellulose and microcrystalline cellulose powders, derived from agricultural waste products, that have for thepharmaceutical industry, desirable physical (flow) properties were investigated. α–Cellulose (GCN) wasextracted from groundnut shell (an agricultural waste product) using a non-dissolving method based oninorganic reagents. Modification of this α -cellulose was carried out by partially hydrolysing it with 2Nhydrochloric acid under reflux to obtain microcrystalline cellulose (MCGN). Th...

  18. Microcrystalline Cellulose from Plant Wastes through Sodium Hydroxide-Anthraquinone-Ethanol Pulping

    Directory of Open Access Journals (Sweden)

    Olugbenga Oludayo Oluwasina

    2014-08-01

    Full Text Available Microcrystalline cellulose was prepared from wastes of Tithonia diversifolia, inflorescence stems of Musa sapientum, and Musa paradisiaca by soda-anthraquinone–ethanol pulping method. They were bleached by sodium chlorite and then alpha-cellulose was isolated, followed by preparation of microcrystalline cellulose. The study revealed the effect of various processing stages on the properties of the cellulose obtained. Yields of more than 80% of microcrystalline cellulose were obtained. Fourier transform infrared (FTIR and solid state 13C Nuclear magnetic resonance (13C NMR confirmed the presence of the major expected peaks in microcrystalline cellulose. Scanning electron microscopy (SEM revealed that Musa species had short fiber length and mixtures of non-aggregated spherical, rod-shaped and thread like microcrystalline cellulose, but Tithonia diversifolia had aggregate crystal packed formation. The results compared well with those of other authors and were able to meet most of the requirements specified in British Pharmacopoeia. The study revealed that a drug excipient like microcrystalline cellulose that could protect thermo-labile active ingredients could be successfully obtained from abundant non-woody agricultural wastes.

  19. Preparation and Characterization of High Hydrogen-containing Silicone Oil%高含氢硅油的制备及表征

    Institute of Scientific and Technical Information of China (English)

    李季; 赵晓璐; 白雪; 张磊; 杨春晖

    2016-01-01

    Hydrogen silicone oil was synthesized by catalytic balance of methyldichlorosilae with methyl hydrogen dichlorosilane( MeHSiCl2 ) as monomers, hexamethyldisiloxane as the end-capping agent, the con-centrated sulfuric acid as the catalyst and methylbenzene as the solvent.The structure of product was charac-terized by FT-IR.Effects of preparation are discussed by studying the dropping rate of water, catalyst dosage, time of catalytic balance, reaction time and the dosage of end-capping reagent MM.The optimal conditions were that droplets acceleration of water is 0.3 mL/min, sulfuric acid 2.5 mL, reacting in room temperature for 24h at 20℃.MeHSiCl250 mL,and 1.2 mL MM.%以甲基氢二氯硅烷( MeHSiCl2)为单体,六甲基二硅氧烷( MM)为封端剂,浓硫酸为催化剂,甲苯为溶剂,通过催化平衡制得高含氢硅油。通过红外光谱对产品结构进行表征。研究了水的滴加速度、催化剂用量、催化平衡时间、反应温度以及封端剂MM用量对产物性能的影响。最佳工艺条件为:水的滴加速度0.3 mL/min,催化剂浓硫酸用量2.5 mL,催化平衡时间24 h,反应温度20℃, MeHSiCl2用量50 mL、封端剂MM用量1.2 mL。

  20. Theoretical and experimental study of the quasistatic capacitance of metal-insulator-hydrogenated amorphous silicon structures: Strong evidence for the defect-pool model

    Science.gov (United States)

    Kleider, J. P.; Dayoub, F.

    1998-10-01

    The density of localized states in hydrogenated amorphous silicon (a-Si:H) is studied by means of the quasistatic capacitance technique applied to metal-insulator a-Si:H structures. Calculations in the framework of the defect-pool model show that the changes in the quasistatic capacitance versus gate bias curves (qs-CV curves) after bias annealing reveal the changes in the density of dangling-bond states predicted by the model, and are sensitive to the defect-pool parameters. The comparison of theoretical qs-CV curves with experimental curves obtained in a wide range of bias-anneal voltages Vba on several kinds of structures (top gate oxide, top gate nitride, and the most commonly used bottom gate nitride structures) strongly support the defect-pool model, and values for the model parameters are deduced. It is shown that for all structures the dominant phenomenon for bias annealing at positive Vba (i.e., under electron accumulation) is the creation of defects in the lower part of the gap in the a-Si:H. Bias annealing under hole accumulation reveals the creation of defects in the upper part of the gap of a-Si:H, but the precise dependence of the qs-CV curves upon Vba depends on the nature of the insulator-a-Si:H interface. In particular, it is affected by a higher density of interface trap levels in the top gate nitride structures, and by hole injection and trapping from the a-Si:H into the nitride layer in the bottom gate nitride structures.

  1. A comparison of mechanical properties of three MEMS materials - silicon carbide, ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon (Ta-C)

    Energy Technology Data Exchange (ETDEWEB)

    Carlisle, John A. (Argonne National Laboratory, Argonne, IL); Moldovan, N. (Northwestern University, Evanston, IL); Xiao, Xingcheng (Argonne National Laboratory, Argonne, IL); Zorman, C. A. (Case Western Reserve University, Cleveland, OH); Mancini, D. C. (Argonne National Laboratory, Argonne, IL); Peng, B. (Northwestern University, Evanston, IL); Espinosa, H. D. (Northwestern University, Evanston, IL); Friedmann, Thomas Aquinas; Auciello, Orlando, (Argonne National Laboratory, Argonne, IL)

    2004-06-01

    Many MEMS devices are based on polysilicon because of the current availability of surface micromachining technology. However, polysilicon is not the best choice for devices where extensive sliding and/or thermal fields are applied due to its chemical, mechanical and tribological properties. In this work, we investigated the mechanical properties of three new materials for MEMS/NEMS devices: silicon carbide (SiC) from Case Western Reserve University (CWRU), ultrananocrystalline diamond (UNCD) from Argonne National Laboratory (ANL), and hydrogen-free tetrahedral amorphous carbon (ta-C) from Sandia National Laboratories (SNL). Young's modulus, characteristic strength, fracture toughness, and theoretical strength were measured for these three materials using only one testing methodology - the Membrane Deflection Experiment (MDE) developed at Northwestern University. The measured values of Young's modulus were 430GPa, 960GPa, and 800GPa for SiC, UNCD, and ta-C, repectively. Fracture toughness measurments resulted in values of 3.2, 4.5, and 6.2 MPa x m{sup 1/2}, respectively. The strengths were found to follow a Weibull distribution but their scaling was found to be controlled by different specimen size parameters. Therefore, a cross comparison of the strengths is not fully meaningful. We instead propose to compare their theoretical strengths as determined by employing Novozhilov fracture criterion. The estimated theoretical strength for SiC is 10.6GPa at a characteristic length of 58nm, for UNCD is 18.6GPa at a characteristic length of 37nm, and for ta-C is 25.4GPa at a characteristic length of 38nm. The techniques used to obtained these results as well as microscopic fractographic analyses are summarized in the article. We also highlight the importance of characterizing mechanical properties of MEMS materials by means of only one simple and accurate experimental technique.

  2. Tuning the optical properties of RF-PECVD grown μc-Si:H thin films using different hydrogen flow rate

    Science.gov (United States)

    Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

    2017-07-01

    In this paper we study the effect of H2/SiH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline silicon embedded in amorphous matrix thin films. The thin films are prepared using standard RF-PECVD process at substrate temperature of 200 °C. The effect of hydrogen dilution ratio on the optical index of refraction and the absorption coefficient were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with low SiH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow of μc-Si:H samples, ∼8% and 12% reduction in the index of refraction at 400 nm and at 1500 nm can be achieved, respectively. In addition a 78% reduction in surface roughness is obtained when 60sccm of H2 is used in the deposition compared to the sample without any H2 incorporation.

  3. Performance improvement of n-i-p μc-Si:H solar cells by gradient hydrogen dilution technique

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    High pressure radio frequency plasma enhanced chemical vapor deposition(RF-PECVD)process was adopted to investigate the effect of constant hydrogen dilution technique and gradient hydrogen dilu-tion technique on the structural evolution of intrinsic films and the performance of n-i-p microcrystal-line silicon solar cells.The experiment results demonstrated that the grain size and crystalline volume fraction along the growth direction of intrinsic films can be controlled and the performance of solar cells can be greatly improved by gradient hydrogen dilution technique.An initial active-area efficiency of 5.7%(Voc=0.47V,Jsc=20.2mA/cm2,FF=60%)for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.12%(Voc=1.2V,Jsc=12.05mA/cm2,FF=70%)for the a-Si:H/μc-Si:H tandem n-i-p solar cells has been achieved.

  4. Phloxine B as a Probe for Entrapment in Microcrystalline Cellulose

    Directory of Open Access Journals (Sweden)

    Enrique San Román

    2012-02-01

    Full Text Available The photophysical behaviour of phloxine B adsorbed onto microcrystalline cellulose was evaluated by reflectance spectroscopy and laser induced time-resolved luminescence in the picosecond-nanosecond and microsecond-millisecond ranges. Analysis of the absorption spectral changes with concentration points to a small tendency of the dye to aggregate in the range of concentrations under study. Prompt fluorescence, phosphorescence and delayed fluorescence spectral decays were measured at room temperature and 77 K, without the need of sample degassing because cellulose protects triplet states from oxygen quenching. In all cases, spectral changes with time and lifetime distribution analysis were consistent with the dye coexisting in two different environments: dyes tightly entrapped between polymer chains in crystalline regions of cellulose showed longer fluorescence and phosphorescence lifetimes and more energetic triplet states, while dyes adsorbed in more amorphous regions of the support showed shorter lifetimes and less energetic triplet states. This behaviour is discussed in terms of the different dye-support interactions in both kinds of adsorption sites.

  5. Non-wood fibre production of microcrystalline cellulose from Sorghum caudatum: Characterisation and tableting properties

    OpenAIRE

    Ohwoavworhua F; Adelakun T

    2010-01-01

    The microcrystalline cellulose is an important ingredient in pharmaceutical, food, cosmetic and other industries. In this study, the microcrystalline cellulose, obtained from the stalk of Sorghum caudatum was evaluated for its physical and tableting characteristics with a view to assessing its usefulness in pharmaceutical tableting. The microcrystalline cellulose, obtained from the stalk of Sorghum caudatum, obtained by sodium hydroxide delignification followed by sodium hypochlorite bleachin...

  6. Quality Evaluation for Microcrystalline Silicon Thin-Film Solar Cells by Single-Layer Absorption

    Directory of Open Access Journals (Sweden)

    Sheng-Hui Chen

    2012-01-01

    Full Text Available The absorption coefficient at 1.4 eV is divided by the value at 0.9 eV to obtain the factor used to judge the quality of μc-Si:H. PV device performance can be predicted by multiplying Voc with Isc when using this layer as an intrinsic layer. The results show a good relationship between the quality factor and the product of open-circuit voltage and short-circuit current. However, the final efficiency is influenced by the identities of the interface in the multilayer structure.

  7. Compactibility of mixtures of calcium carbonate and microcrystalline cellulose.

    Science.gov (United States)

    Garzón, M de Lourdes; Villafuerte, Leopoldo

    2002-01-01

    A patented coprocessed mixture of microcrystalline cellulose (MC) and calcium carbonate (CC) is claimed to perform, as a pharmaceutical excipient, equal or better than pure MC. To investigate it, the tensile strength (T) of tablets made of mixtures of MC type 102, CC, magnesium stearate (MS) and polyvinylpyrrolidone (PVP) and formed under a compaction pressure (P(c)) ranging up to 618 MPa has been determined. The compactibility of the mixtures was defined through regression parameters obtained with ln(-ln(1-T/T(max)))=slope x lnP(c) + intercept. MC/CC mixtures, P(c)=618 MPa, show a small decrease in tablet tensile strength with CC proportions up to about 20%, falling considerably thereafter. Lower compaction pressures, P(c)tablet tensile strength due to 2%-MS, P(c)=487 MPa, was recovered to 35% of its original value admixing about 25% CC. This maximal value of recovery showed a shift to lower proportions of CC, up to 10%, as compaction pressure decreased. This was attributed to lower CC-particles fragmentation or agglomerates spreading at lower compaction pressures. Mixtures with increased plasticity (MC/CC/PVP and MC/CC/PVP/MS) showed an increased compactibility, which was more evident at higher compaction pressures and higher CC proportions, presumably due to higher deformation and erosion of PVP particles. Inclusion of about 40% CC in a MC/PVP/MS mixture showed 60% recovery of the original MC tablet tensile strength. Lower MS proportions are expected to allow a higher recovery.

  8. Thin film silicon n–i–p solar cells deposited by VHF PECVD at 100 °C substrate temperature

    NARCIS (Netherlands)

    Brinza, M.; Rath, J.K.; Schropp, R.E.I.

    2009-01-01

    The applicability of the very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) technique to the fabrication of solar cells in an n–i–p configuration at 100 °C substrate temperature is being investigated. Amorphous and microcrystalline silicon cells are made with the absorber la

  9. Study of hydrogenated amorphous silicon devices under intense electric field: application to nuclear detection; Etude de dispositifs electroniques en silicium amorphe hydrogene sous fort champ electrique: application a la detection nucleaire

    Energy Technology Data Exchange (ETDEWEB)

    Ilie, A. [CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Direction des Technologies Avancees]|[Paris-11 Univ., 91 - Orsay (France)

    1996-12-31

    The goal of this work was the study, development and optimization of hydrogenated amorphous silicon (a-Si:H) devices for use in detection of ionizing radiation. Thick p-i-n devices, capable of withstanding large electric fields (up to 10{sup 6} V/cm) with small currents (nA/cm{sup 2}), were developed. To decrease fabrication time, films were made using the `He diluted` PECVD process and compared to standard a-Si:H films. Aspects connected to specific detector applications as well as to the fundamental physics of a-Si:H were considered: the internal electric field technique, in which the depletion charge was measured as a function of the applied bias voltage; study of the leakage current of p-i-n devices permitted us to demonstrate different regimes: depletion, field-enhanced thermal generation and electronic injection across the p layer. The effect of the electric field on the thermal generation of the carriers was studied considering the Poole-Frenkel and tunneling mechanisms. A model was developed taking under consideration the statistics of the correlated states and electron-phonon coupling. The results suggest that mechanisms not included in the `standard model` of a Si:h need to be considered, such as defect relaxation, a filed-dependent mobility edge etc...; a new metastable phenomenon, induced by prolonged exposure to a strong electric field, was observed and studied. It is characterized by marked decrease of the leakage current and the detector noise, and increase in the breakdown voltage, as well as an improvement of carrier collection efficiency. This forming process appears to be principally due to an activation of the dopants in the p layer; finally, the capacity of thick p-i-n a Si:H devices to detect ionizing radiation has been evaluated. We show that it is possible, with 20-50 micron thick p-i-n devices, to detect the full spectrum of alpha and beta particles. With an appropriate converter, neutron detection then becomes possible. (author). 137 refs.

  10. Influence of Boron doping on micro crystalline silicon growth

    Institute of Scientific and Technical Information of China (English)

    Li Xin-Li; Wang Guo; Chen Yong-Sheng; Yang Shi-E; Gu Jin-Hua; Lu Jing-Xiao; Gao Xiao-Yong; Li Rui; Jiao Yue-Chao; Gao Hai-Bo

    2011-01-01

    Microcrystalline silicon (Ftc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasmsrenhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent a are about 0.369 and 0.95 for the undoped thin film,respectively. Whereas,for the boron-doped pc-Si:H thin film,βincreases to 0.534 and a decreases to 0.46 due to the shadowing effect.

  11. Matrix mini-tablets based on starch/microcrystalline wax mixtures.

    Science.gov (United States)

    De Brabander, C; Vervaet, C; Fiermans, L; Remon, J P

    2000-04-20

    Matrix mini-tablets based on a combination of microcrystalline waxes and starch derivatives were prepared using ibuprofen as a model drug. The production of mini-tablets was preferred over the production of pellets, as up-scaling of the pelletisation process seemed problematic. Prior to tabletting, melt granulation in a hot stage screw extruder and milling were required. The in vitro drug release was varied using microcrystalline waxes with a different melting range, the slowest drug release being obtained with a formulation containing a microcrystalline wax with a melting range between 68 and 72 degrees C. Generally speaking increasing the wax concentration resulted in a slower drug release. In vitro drug release profiles were also modified using different starches and mixtures of starches. Increasing the ibuprofen concentration to 70% resulted in a faster drug release rate.

  12. Rapid thermal annealing of sputter-deposited ZnO:Al films for microcrystalline Si thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Hanajiri T.

    2012-06-01

    Full Text Available Rapid thermal annealing of sputter-deposited ZnO and Al-doped ZnO (AZO films with and without an amorphous silicon (a-Si capping layer was investigated using a radio-frequency (rf argon thermal plasma jet of argon at atmospheric pressure. The resistivity of bare ZnO films on glass decreased from 108 to 104–105 Ω cm at maximum surface temperatures Tmaxs above 650 °C, whereas the resistivity increased from 10-4 to 10-3–10-2Ω cm for bare AZO films. On the other hand, the resistivity of AZO films with a 30-nm-thick a-Si capping layer remained below 10-4Ω cm, even after TPJ annealing at a Tmax of 825 °C. The film crystallization of both AZO and a-Si layers was promoted without the formation of an intermixing layer. Additionally, the crystallization of phosphorous- and boron-doped a-Si layers at the sample surface was promoted, compared to that of intrinsic a-Si under the identical plasma annealing conditions. The TPJ annealing of n+-a-Si/textured AZO was applied for single junction n-i-p microcrystalline Si thin-film solar cells.

  13. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  14. Improved photoluminescence of silicon nanocrystals in silicon nitride prepared by ammonia sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, K; Feng, J Y; Zhang, Z J [Department of Materials Science and Engineering, Key Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China)

    2006-09-28

    In the present work we investigated the photoluminescence property of silicon nanocrystals in silicon nitride prepared by ammonia sputtering. Silicon nanocrystals were demonstrated to form even after thermal annealing at 700 deg. C. Compared with the control sample using N{sub 2} as the reactive gas, the luminescence intensity of silicon nanocrystals in silicon nitride prepared by NH{sub 3} sputtering was greatly increased. The improvement in photoluminescence was attributed to the introduction of hydrogen-related bonds, which could well passivate the nonradiative defects existing at the interface between silicon nanocrystals and the silicon nitride matrix.

  15. Preparation and Characterization of Microcrystalline Cellulose (MCC from Kenaf and Cotton Stem

    Directory of Open Access Journals (Sweden)

    Farshad Mirehki

    2013-11-01

    Full Text Available Cellulose, microcrystalline cellulose (MCC and nanofiber cellulose are the ones of materials which are being used recently as biodegradable filler and reinforcing agent for making composites. In this research, microcrystalline cellulose were prepared from kenaf and cotton bast by hydrochloric acid hydrolysis. The effects of hydrolysis condition on amount of crystallinity and crystal size of MCC were investigated by infrared spectroscopy (FT-IR, X-ray diffraction (XRD and scanning electron microscopy (SEM. Results have shown that in both samples increasing the acid ratio increased the crystallinity; however, the size of crystals did not change. SEM results have shown that after hydrolysis the size of sample particles was micro.

  16. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations; Etude et caracterisation d'un capteur en silicium amorphe hydrogene depose sur circuit integre pour la detection de particules et de rayonnements

    Energy Technology Data Exchange (ETDEWEB)

    Despeisse, M

    2006-03-15

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  17. Silicon nanocrystal inks, films, and methods

    Energy Technology Data Exchange (ETDEWEB)

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  18. Matching of Silicon Thin-Film Tandem Solar Cells for Maximum Power Output

    Directory of Open Access Journals (Sweden)

    C. Ulbrich

    2013-01-01

    Full Text Available We present a meaningful characterization method for tandem solar cells. The experimental method allows for optimizing the output power instead of the current. Furthermore, it enables the extraction of the approximate AM1.5g efficiency when working with noncalibrated spectra. Current matching of tandem solar cells under short-circuit condition maximizes the output current but is disadvantageous for the overall fill factor and as a consequence does not imply an optimization of the output power of the device. We apply the matching condition to the maximum power output; that is, a stack of solar cells is power matched if the power output of each subcell is maximal at equal subcell currents. The new measurement procedure uses additional light-emitting diodes as bias light in the JV characterization of tandem solar cells. Using a characterized reference tandem solar cell, such as a hydrogenated amorphous/microcrystalline silicon tandem, it is possible to extract the AM1.5g efficiency from tandems of the same technology also under noncalibrated spectra.

  19. A novel method of producing a microcrystalline beta-sitosterol suspension in oil

    DEFF Research Database (Denmark)

    Christiansen, Leena I; Rantanen, Jukka T; von Bonsdorff, Anna K

    2002-01-01

    This paper describes a novel method of producing a microcrystalline oral suspension containing beta-sitosterol in oil for the treatment of hypercholesterolaemia. beta-Sitosterol pseudopolymorphs with different water contents were crystallized from acetone and acetone-water solutions. Structural a...

  20. Optimisation of the composition and production of mannitol/microcrystalline cellulose tablets

    NARCIS (Netherlands)

    Westerhuis, J.A; de Haan, P; Zwinkels, J; Jansen, W.T; Coenegracht, P.M J; Lerk, C.F

    1996-01-01

    Mixtures of mannitol and microcrystalline cellulose (MCC) were investigated on a small-production scale by granulation in a high-shear mixer and compression into tablets. For both excipients only a few cases of incompatibilities with active ingredients are known. Tablets with only MCC as the filler

  1. Visible light activated TiO2/microcrystalline cellulose nanocatalyst to destroy organic contaminants in water.

    Science.gov (United States)

    Hybrid TiO2/microcrystalline cellulose (MC) nanophotocatalyst was prepared in situ by a facile and simple synthesis utilizing benign precursors such as MC and TiCl4. The as-prepared nanocomposite was characterized by XRD, XPS, BET surface area analyzer, UV–vis DRS and TGA. Surfac...

  2. Defect structure and mechanical stability of microcrystalline titanium produced by equal channel angular pressing

    Science.gov (United States)

    Betekhtin, V. I.; Kadomtsev, A. G.; Narykova, M. V.; Amosova, O. V.; Sklenicka, V.

    2017-01-01

    It is established that increases in nanoporosity and the proportion of high-angle grain boundaries in the process of equal-channel angular pressing are the main structural factors leading to reduction in mechanical stability (durability) of microcrystalline titanium during long-term tests under creeping conditions.

  3. Visible light activated TiO2/microcrystalline cellulose nanocatalyst to destroy organic contaminants in water.

    Science.gov (United States)

    Hybrid TiO2/microcrystalline cellulose (MC) nanophotocatalyst was prepared in situ by a facile and simple synthesis utilizing benign precursors such as MC and TiCl4. The as-prepared nanocomposite was characterized by XRD, XPS, BET surface area analyzer, UV–vis DRS and TGA. Surfac...

  4. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  5. Thin film silicon modules: contributions to low cost industrial production

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A. [Universite de Neuchatel, Neuchatel (Switzerland)

    2005-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) discusses the research work done during the two-year period 2003-04 at the Thin-Film Solar Cell Laboratory of the Institute of Microtechnology (IMT) at the University of Neuchatel in Switzerland. The transition from fundamental research work to concrete industrialisation issues, and changes within the research staff are discussed. The main results of the work done are presented, including basic techniques for the production of p-i-n solar cells on glass, new technologies for the deposition of n-i-p cells on low-cost flexible substrates and the optimisation of zinc oxide deposition methods. The key role played by substrate chemistry and roughness in the nucleation and growth of micro-crystalline silicon layers is looked at and diagnostic tools for the analysis of micro-crystalline solar cells are discussed.

  6. Photoelectrochemical hydrogen production

    Energy Technology Data Exchange (ETDEWEB)

    Rocheleau, R.; Misra, A.; Miller, E. [Univ. of Hawaii, Honolulu, HI (United States)

    1998-08-01

    A significant component of the US DOE Hydrogen Program is the development of a practical technology for the direct production of hydrogen using a renewable source of energy. High efficiency photoelectrochemical systems to produce hydrogen directly from water using sunlight as the energy source represent one of the technologies identified by DOE to meet this mission. Reactor modeling and experiments conducted at UH provide strong evidence that direct solar-to-hydrogen conversion efficiency greater than 10% can be expected using photoelectrodes fabricated from low-cost, multijunction (MJ) amorphous silicon solar cells. Solar-to-hydrogen conversion efficiencies as high as 7.8% have been achieved using a 10.3% efficient MJ amorphous silicon solar cell. Higher efficiency can be expected with the use of higher efficiency solar cells, further improvement of the thin film oxidation and reduction catalysts, and optimization of the solar cell for hydrogen production rather than electricity production. Hydrogen and oxygen catalysts developed under this project are very stable, exhibiting no measurable degradation in KOH after over 13,000 hours of operation. Additional research is needed to fully optimize the transparent, conducting coatings which will be needed for large area integrated arrays. To date, the best protection has been afforded by wide bandgap amorphous silicon carbide films.

  7. Influence of texture modifications in silicon solar cells on absorption in the intrinsic layers

    Science.gov (United States)

    Ermes, M.; Bittkau, K.; Carius, R.

    2012-06-01

    The influence of the front texture of an etched transparent conductive oxide with crater-like structures of various sizes on the absorption of a thin amorphous silicon (a-Si:H) layer is investigated by rigorous optical simulations as part of two simplified systems: A simplified single junction device, using a perfect metal as back contact and a top cell of an amorphous/microcrystalline silicon tandem device, using a microcrystalline silicon halfspace adjacent to the amorphous layer. The texture is modified by stretching either in height or laterally and the average absorption in the a-Si:H layer is investigated relative to the original structure. We investigate the average absorption for each wavelength as well as the total absorption, weighted with an AM1.5g spectrum. Furthermore, the local absorption distribution inside the a-Si:H layer is examined to improve the understanding of local texture features and their influence on absorption and cell performance. For both modifications, an optimal point can be found to improve the absorption in the amorphous layer by up to 15% and 6% for a simplified single junction and tandem top cell, respectively. In case of the top cell of the simplified tandem device, it is found that additionally, the transmission into the microcrystalline silicon can be improved. Also, the local absorption distribution shows that there is an optimal size of the surface craters for all modifications, while steeper crater rims in general lead to higher absorption.

  8. Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

    NARCIS (Netherlands)

    A.D. Verkerk; M.M. de Jong; J.K. Rath; M. Brinza; R.E.I. Schropp; W.J. Goedheer; V.V. Krzhizhanovskaya; Y.E. Gorbachev; K.E. Orlov; E.M. Khilkevitch; A.S. Smirnov

    2008-01-01

    In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by l

  9. "Click" Patterning of Self-Assembled Monolayers on Hydrogen-Terminated Silicon Surfaces and Their Characterization Using Light-Addressable Potentiometric Sensors.

    Science.gov (United States)

    Wang, Jian; Wu, Fan; Watkinson, Michael; Zhu, Jingyuan; Krause, Steffi

    2015-09-08

    Two potential strategies for chemically patterning alkyne-terminated self-assembled monolayers (SAMs) on oxide-free silicon or silicon-on-sapphire (SOS) substrates were investigated and compared. The patterned surfaces were validated using a light-addressable potentiometric sensor (LAPS) for the first time. The first strategy involved an integration of photolithography with "click" chemistry. Detailed surface characterization (i.e. water contact angle, ellipsometry, AFM, and XPS) and LAPS measurements showed that photoresist processing not only decreases the coverage of organic monolayers but also introduces chemically bonded contaminants on the surfaces, thus significantly reducing the quality of the SAMs and the utility of "click" surface modification. The formation of chemical contaminants in photolithography was also observed on carboxylic acid- and alkyl-terminated monolayers using LAPS. In contrast, a second approach combined microcontact printing (μCP) with "click" chemistry; that is azide (azido-oligo(ethylene glycol) (OEG)-NH2) inks were printed on alkyne-terminated SAMs on silicon or SOS through PDMS stamps. The surface characterization results for the sample printed with a flat featureless PDMS stamp demonstrated a nondestructive and efficient method of μCP to perform "click" reactions on alkyne-terminated, oxide-free silicon surfaces for the first time. For the sample printed with a featured PDMS stamp, LAPS imaging showed a good agreement with the pattern of the PDMS stamp, indicating the successful chemical patterning on non-oxidized silicon and SOS substrates and the capability of LAPS to image the molecular patterns with high sensitivity.

  10. Photoelectrochemical hydrogen production

    Energy Technology Data Exchange (ETDEWEB)

    Rocheleau, R.E.; Miller, E.; Misra, A. [Univ. of Hawaii, Honolulu, HI (United States)

    1996-10-01

    The large-scale production of hydrogen utilizing energy provided by a renewable source to split water is one of the most ambitious long-term goals of the U.S. Department of Energy`s Hydrogen Program. One promising option to meet this goal is direct photoelectrolysis in which light absorbed by semiconductor-based photoelectrodes produces electrical power internally to split water into hydrogen and oxygen. Under this program, direct solar-to-chemical conversion efficiencies as high as 7.8 % have been demonstrated using low-cost, amorphous-silicon-based photoelectrodes. Detailed loss analysis models indicate that solar-to-chemical conversion greater than 10% can be achieved with amorphous-silicon-based structures optimized for hydrogen production. In this report, the authors describe the continuing progress in the development of thin-film catalytic/protective coatings, results of outdoor testing, and efforts to develop high efficiency, stable prototype systems.

  11. Significant light absorption enhancement in silicon thin film tandem solar cells with metallic nanoparticles.

    Science.gov (United States)

    Cai, Boyuan; Li, Xiangping; Zhang, Yinan; Jia, Baohua

    2016-05-13

    Enhancing the light absorption in microcrystalline silicon bottom cell of a silicon-based tandem solar cell for photocurrent matching holds the key to achieving the overall solar cell performance breakthroughs. Here, we present a concept for significantly improving the absorption of both subcells simultaneously by simply applying tailored metallic nanoparticles both on the top and at the rear surfaces of the solar cells. Significant light absorption enhancement as large as 56% has been achieved in the bottom subcells. More importantly the thickness of the microcrystalline layer can be reduced by 57% without compromising the optical performance of the tandem solar cell, providing a cost-effective strategy for high performance tandem solar cells.

  12. 后退火增强氢化非晶硅钝化效果的研究∗%Investigation of p ost-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon

    Institute of Scientific and Technical Information of China (English)

    陈剑辉; 杨静; 沈艳娇; 李锋; 陈静伟; 刘海旭; 许颖; 麦耀华

    2015-01-01

    The excellent surface passivation scheme for suppression of surface recombination is a basic prerequisite to obtain high efficiency solar cells. Particularly, the HIT (heterojunction with intrinsic thin-layer) solar cell, which possesses an abrupt discontinuity of the crystal network at an interface between the crystalline silicon (c-Si) surface and the hydrogenated amorphous silicon (a-Si:H) thin film, usually causes a large density of defects in the bandgap due to a high density of dangling bonds, so it is very important for high energy conversion efficiency to obtain millisecond (ms) range of minority carrier lifetime (i. e. >2 ms). The a-Si:H, due to its excellent passivation properties obtained at low deposition temperatures and also mature processing, is still the best candidate materials for silicon HIT solar cell. Deposition of a transparent conductive oxide (TCO), such as indium tin oxide (ITO), has to be used to improve the carrier transport, since the lateral conductivity of a-Si:H is very poor. Usually, ITO is deposited by magnetron sputtering, but damage of a-Si:H layers by sputtering-induced ion bombardment inevitably occurs, thus triggering the serious degradation of the minority carrier lifetime, i. e., a loss in wafer passivation. Fortunately, this damage can be often recovered by some post-annealing. In this paper, however, the situation is different, and it is found that the minority carrier lifetime of ITO/a-Si:H/c-Si/a-Si:H heterojunction has been drastically enhanced by post-annealing after sputtering ITO on a-Si:H/c-Si/a-Si:H heterojunction (from 1.7 ms to 4.0 ms), not just recovering. It is very important to investigate how post-annealing enhances the lifetime and its physics nature. Combining the two experimental ways of HF treatment and vacuum annealing, three possible reasons for this enhancement effect (the field effect at the ITO/a-Si:H interface, the surface reaction-layer resulting from annealing in air, and the optimization of a

  13. Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

    Science.gov (United States)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2016-07-01

    Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

  14. Supramolecular elucidation of the quality attributes of microcrystalline cellulose and isomalt composite pellet cores.

    Science.gov (United States)

    Antal, István; Kállai, Nikolett; Luhn, Oliver; Bernard, Jörg; Nagy, Zsombor Kristóf; Szabó, Barnabás; Klebovich, Imre; Zelkó, Romána

    2013-10-01

    The major objective of this study was to disclose the relationships between the physical quality attributes and supramolecular structure of novel composite pellet cores containing microcrystalline cellulose (MCC) and isomalt in different ratios. The novel composite pellet cores were manufactured by an extrusion/spheronisation process. The micro or supramolecular structure of pellets was tracked by positron annihilation lifetime spectroscopy (PALS) based on the o-Ps lifetime values. The results indicate a correlation between the examined macro and microstructural properties of the inert cores. The higher free volume holes indicated by the higher o-Ps lifetime values resulted in a more mobile micro- and supramolecular structure of MCC cores thus increasing the plastic deformation and the tensile strength of the cores. A physical interaction was found between the microcrystalline cellulose and isomalt which supports the osmotic effect of the water soluble sugar alcohol in the composite pellet cores regarding drug release.

  15. Microwave assisted conversion of microcrystalline cellulose into value added chemicals using dilute acid catalyst.

    Science.gov (United States)

    Ching, Teck Wei; Haritos, Victoria; Tanksale, Akshat

    2017-02-10

    One of the grand challenges of this century is to transition fuels and chemicals production derived from fossil feedstocks to renewable feedstocks such as cellulosic biomass. Here we describe fast microwave conversion of microcrystalline cellulose (MCC) in water, with dilute acid catalyst to produce valuable platform chemicals. Single 10min microwave assisted treatment was able to convert >60% of MCC, with >50mol% yield of desirable products such as glucose, HMF, furfural and levulinic acid. Recycling of residual MCC with make-up fresh MCC resulted in an overall conversion of >93% after 5 cycles while maintaining >60% conversion in each cycle. Addition of isopropanol (70%v/v) as a co-solvent increased the yields of HMF and levulinic acid. This work shows for the first time proof of concept for complete conversion of recalcitrant microcrystalline cellulose in mild conditions of low temperature, dilute acid and short residence time using energy efficient microwave technology.

  16. Study on Preconcentration of Trace Copper Using Microcrystalline Triphenylmethane Loaded with Malachite Green

    Institute of Scientific and Technical Information of China (English)

    LIANG,Yong; ZHAO,Xiao-Hong; LI,Quan-Min; CUI,Feng-Ling; LIU,Guo-Guang

    2007-01-01

    The paper describes a noveI method for copper preconcentration using microcrystalline triphenylmethane loaded with malachite green prior to the determination by the flame atomic absorption spectrometry(FAAS).Under the optimum conditions,Cu(Ⅱ)can be totally adsorbed on the surface of microcrystalline triphenylmethane,and completely separated from Pb(Ⅱ),Cd(Ⅱ),Co(Ⅱ),Cr(Ⅲ),Ni(Ⅱ),Mn(Ⅱ),Fe(Ⅲ)and Al(Ⅲ)by controlling acidity.The preconcentration factor of this proposed method is 200.The recovery is in a range of 97.5%-105%.The relative standard deviation(RSD)is not beyond 3.0%.The proposed method has been successfully applied to the determination of trace copper in various water samples with satisfactory results.

  17. Thermal decomposition of silane to form hydrogenated amorphous Si

    Science.gov (United States)

    Strongin, M.; Ghosh, A.K.; Wiesmann, H.J.; Rock, E.B.; Lutz, H.A. III

    Hydrogenated amorphous silicon is produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700 to 2300/sup 0/C, in a vacuum of about 10/sup -8/ to 10/sup -4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate to form hydrogenated amorphous silicon.

  18. Aromatic structure degradation of single layer graphene on an amorphous silicon substrate in the presence of water, hydrogen and Extreme Ultraviolet light

    NARCIS (Netherlands)

    Mund, Baibhav Kumar; Sturm, J.M.; Lee, Christopher James; Bijkerk, Frederik

    2018-01-01

    In this paper we study the reaction of water and graphene under Extreme Ultraviolet (EUV) irradiation and in the presence of hydrogen. In this work, single layer graphene (SLG) on amorphous Si as an underlying substrate was dosed with water (0.75 ML) and exposed to EUV (λ = 13.5 nm, 92 eV) with

  19. Evaluation of Drug Release From Coated Pellets Based on Isomalt, Sugar, and Microcrystalline Cellulose Inert Cores

    OpenAIRE

    2010-01-01

    The objective of the present study was to investigate the effect of the pellet core materials isomalt, sugar, and microcrystalline cellulose on the in vitro drug release kinetics of coated sustained-release pellets as well as to evaluate the influence of different ratios of polymethacrylate copolymers exhibiting different permeability characteristics on the drug release rate. For characterization of the drug release process of pellets, the effect of osmolality was studied using glucose as an ...

  20. FTIR spectroscopy and X-ray powder diffraction characterization of microcrystalline cellulose obtained from alfa fibers

    Directory of Open Access Journals (Sweden)

    Trache D.

    2013-07-01

    Full Text Available Many cereal straws have been used as raw materials for the preparation of microcrystalline cellulose (MCC. These raw materials were gradually replaced with wood products; nevertheless about 10% of the world overall pulp production is obtained from non-wood raw material. The main interest in pulp made from straw is that it provides excellent fibres for different industries with special properties, and that it is the major available source of fibrous raw material in some geographical areas. The aim of the present work was to characterize microcrystalline cellulose prepared from alfa fibers using the hydrolysis process. The products obtained are characterized with FTIR spectroscopy and X-ray powder diffraction. As a result, FTIR spectroscopy is an appropriate technique for studying changes occurred by any chemical treatment. The spectrum of alfa grass stems shows the presence of lignin and hemicelluloses. However, the cellulose spectrum indicates that the extraction of lignin and hemicellulose was effective. The X-ray analysis indicates that the microcrystalline cellulose is more crystalline than the source material.

  1. Influence of Water on the Structure and Dielectric Properties of the Microcrystalline and Nano-Cellulose

    Science.gov (United States)

    Kovalov, Kostiantyn M.; Alekseev, Olexander M.; Lazarenko, Maxim M.; Zabashta, Yu F.; Grabovskii, Yurii E.; Tkachov, Sergii Yu

    2017-07-01

    Influence of water in the different states on a structure and dielectric properties of microcrystalline cellulose were studied by of X-ray, thermogravimetry, and dielectric spectroscopy. At research of microcrystalline cellulose (MCC) with different content of water, it is shown that the molecules of water are located in the macropores of MCC and in multimolecular hydrated layers. It is shown that at the increase of concentration of water in a hydrated shell, the reorganization of molecules of cellulose in the surface of crystallites takes place, and as a result, their transversal size and crystallinity increase. It is shown that during the concentration of water, more than 13% in a continuous hydrated shell of crystallites appears. Temperature dependences of actual and imaginary parts of complex dielectric permittivity were studied in the interval of temperatures [-180 ÷ 120] °C on frequencies of f = 5, 10, 20, and 50 kHz. A low-temperature relaxation process and high-temperature transition were observed. Low-temperature relaxation process which is related to transition of surface methylol groups of molecules of cellulose conformation from tg to tt is shifted toward low temperatures at the increase of concentration of water in microcrystalline cellulose.

  2. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  3. Simulation studies on the effect of a buffer layer on the external parameters of hydrogenated amorphous silicon –– solar cells

    Indian Academy of Sciences (India)

    K Rajeev Kumar; M Zeman

    2008-10-01

    Device modeling of –– junction amorphous silicon solar cells has been carried out using the amorphous semiconductor analysis (ASA) simulation programme. The aim of the study was to explain the role of a buffer layer in between the - and -layers of the –– solar cell on the external parameters such as dark current density and open circuit voltage. Investigations based on the simulation of dark – characteristics revealed that as the buffer layer thickness increases the dark current for a given voltage decreases.

  4. A study of the role of various reactions on the density distribution of hydrogen, silylene, and silyl in SiH{sub 4}/H{sub 2} plasma discharges

    Energy Technology Data Exchange (ETDEWEB)

    Aman-ur-Rehman [Department of Electrical Engineering, POSTECH, Pohang 790-784 (Korea, Republic of); Pakistan Institute of Engineering and Applied Sciences, P. O. Nilore, Islamabad 45650 (Pakistan); Kwon, H. C.; Lee, J. K. [Department of Electrical Engineering, POSTECH, Pohang 790-784 (Korea, Republic of); Park, W. T. [SEMES CO., LTD. 278 Mosi-ri, Jiksan-eup, Cheonan-si, Chungnam 331-814 (Korea, Republic of)

    2011-09-15

    Fluid model has been used to study the effect of pressure on the distribution of hydrogen (H), silylene (SiH{sub 2}), and silyl (SiH{sub 3}) in hydrogen silane plasma discharges used for deposition of hydrogenated microcrystalline silicon ({mu}c-Si:H) or hydrogenated amorphous silicon (a-Si:H) thin films for solar cells. Time averaged reaction rates have been calculated to study the influence of various reactions on the density distributions of hydrogen, silylene, and silyl. Change in the distributions of hydrogen and silylene from bell shaped distribution at low pressure (1 Torr) to double humped distribution at high pressure (5 Torr) is explained with the help of time averaged reaction rates. Important reactions have been identified that contribute to the production and consumption of hydrogen (H), silylene (SiH{sub 2}), and silyl (SiH{sub 3}). The hydrogen consumption reactions SiH{sub 4} + H {yields} SiH{sub 3} + H{sub 2} and SiH{sub 3} + H {yields} SiH{sub 2} + H{sub 2} are found to play a central role in deciding the distribution of hydrogen. On the other hand, silylene consumption reaction SiH{sub 2} + H{sub 2}{yields} SiH{sub 4} is found to play a central role in determining the distribution of silylene. The distribution of these species at high pressure has been explained by using time averaged continuity equation. The code has been optimized by identifying 33 reactions (out of 53 reactions which contribute in the production and consumption of H, SiH{sub 2}, and SiH{sub 3}) that have no net effect on the density and distribution of these species. It is observed that dropping of 33 reactions has insignificant effect on the density of all the thin film deposition precursors such as Si, SiH, SiH{sub 2}, SiH{sub 3}, and Si{sub 2}H{sub 5}. This reduced set of 20 reactions can be used instead of 53 reactions to calculate the density and distribution of H, SiH{sub 2}, and SiH{sub 3} in the fluid simulation of SiH{sub 4}/H{sub 2} plasma discharges.

  5. Mechanism of single atom switch on silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

    1998-01-01

    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...

  6. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    Science.gov (United States)

    Lowden, Richard A.

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  7. Investigation and optimization of series connection of thin-film silicon solar modules; Untersuchung und Optimierung der Serienverschaltung von Silizium-Duennschicht-Solarmodulen

    Energy Technology Data Exchange (ETDEWEB)

    Haas, Stefan

    2010-07-01

    The integrated series connection is an important and elementary part of a thin-film silicon solar module. The series connection leads to a reduction of Ohmic losses and an increase of the module voltage. After their deposition the different functional layers of a solar module must be patterned selectively to form a series connection. First the front contact, then the absorber, and finally the back contact is locally removed. The first step and the last step are needed to separate the contact layers (isolation step), the absorber patterning is used to expose the front contact and prepare the series interconnection. Usually laser ablation is used for patterning. The patterning of the front contact is overall a noncritical step. Therefore, this thesis exclusively investigates mechanisms that limit the process window of the absorber patterning and the back contact patterning. Especially for the absorber patterning on SnO{sub 2}-substrates the process window is very narrow. As too high pulse energies create a barrier layer on the SnO{sub 2}-window layer, which restricts the current flow in a series connected module. This barrier layer probably consists of SiO{sub 2} or an alloy of (Sn,Si)O{sub 2}. It arrises from redeposition of evaporated silicon. Ablation of the absorber without creating a barrier layer is only possible, when the silicon is not evaporated. Here the ablation is induced by the explosive out-diffusion of hydrogen from the silicon layer. On ZnO-substrates no significant barrier formation occurs. For this reason the process window is very broad. Patterning the back contact is the last isolation step. It is mainly restricted by an unavoidable deterioration of the absorber as well as a possible ablation of the window layer. The deterioration of the absorber in the vicinity of the patterning groove leads to parasitic dark currents for amorphous and for microcrystalline solar cells. The parasitic dark currents decrease the efficiency {eta} of a patterned

  8. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  9. Novel co-processed excipients of mannitol and microcrystalline cellulose for preparing fast dissolving tablets of glipizide

    Directory of Open Access Journals (Sweden)

    Jacob S

    2007-01-01

    Full Text Available Co-processed particles of microcrystalline cellulose and mannitol were fabricated by spray drying technique to be used as a direct compression excipient in fast dissolving tablet formulation. Microcrystalline cellulose passed through sieve no.80, having a volumetric mean diameter (d 50 of 28.35 µm, was used to form composite particles with powdered mannitol which was previously passed through sieve no. 80, in various mixing ratios. The composite particles were evaluated for their powder and compression properties. An increase in the microcrystalline cellulose proportion imparted greater compressibility to the composite particles, but the flowability of these mixtures was decreased. Although microcrystalline cellulose and mannitol have been extensively used in the formulation of fast dissolving tablets, the non-wetting property of the hard compact central core may delay the disintegration time. Optimized co-processed formulation containing mannitol and microcrystalline cellulose in the ratio of 1.25:1 was found to have optimized powder and compressibility characteristics with fast disintegrating property (< 15 s. Photomicrographs have shown that the mannitol crystals are fine and uniformly distributed in the microcrystalline matrix in spray dried form compared to physical mixture of the same combination. The fast disintegration may be due to the partial amorphization and formation of submicron particles of mannitol. These results indicated that improved fast dissolving tablets could be prepared by the co-processed mixture of microcrystalline cellulose and mannitol. Finally fast dissolving tablets of glipizide were prepared by blending with other excipients and compressed into tablets. Sensory study on disintegration time and mouth feel attributes ranked the present formulation based on grittiness, chalkiness and overall preference as the best.

  10. Water resistance of rare earth fluorescent bamboo plastic composites modified with hydrogen silicone oil%含氢硅油改性稀土荧光竹塑复合材料的耐水性

    Institute of Scientific and Technical Information of China (English)

    郑峰; 王艳姗; 丁大彬; 张欣向; 杨文斌

    2015-01-01

    To improve the water resistance of rare earth fluorescent bamboo plastic composites and broaden the scope of application, the surface of bamboo powder and strontium aluminate phosphor were modified by hydrogen-containing silicone oil. Rare earth fluorescent bamboo plastic composites modified with hydrogen-containing silicone oil were manufactured by melt blending and injection molding process. In the composites, the contents of bamboo powder and strontium aluminate phosphor were both 13.89%. The effects of hydrogen-containing silicone oil on the contact angle, water absorption, thickness swelling, emission spectrum, bending strength, bending modulus, tensile strength and impact strength of rare earth fluorescent bamboo plastic composites were investigated by using contact angle meter, fluorescence spectrophotometer, electronic universal testing machine, pendulum impact tester and so on. The tensile fracture microstructure of rare earth fluorescent bamboo plastic composites was observed by field emission scanning electron microscopy. The results from water contact angle test showed that the water contact angles of composites unmodified and modified by hydrogen-containing silicone oil were 83° and 100°, respectively, which indicated that the unmodified composite was hydrophilic and the modified composite was hydrophobic. Analysis showed that the water absorption and thickness swelling of composites increased with the increasing of soak time and then leveled off. The water absorption and thickness swelling of modified composites were smaller than those of unmodified composites. Emission spectra showed that the relative luminous intensity peak of modified composites was 67.84% higher than that of unmodified composites before being soaked in water. The relative luminous intensity of them decreased with the increasing of soak time. After being soaked in water for 11 d, the relative luminous intensity of unmodified and modified composites was decreased by 46.40% and 28

  11. Hydrogen Passivation in Mc-Si for Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The effect of hydrogen passivation on multicrystalline silicon (mc-Si) used for solar cells is described, and the mechanism of hydrogen diffusion and passivation is also investigated. Then, the hydrogen passivation processes applied in industries and research laboratories are introduced. Finally the existing problems and the prospects of hydrogen passivation are reviewed.

  12. Effect of hydrogen doping on the properties of Al and F co-doped ZnO films for thin film silicon solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Yang, Tung-Hsin

    2016-04-30

    Aluminum and fluorine co-doped zinc oxide (AFZO) thin films were prepared in Ar + H{sub 2} atmospheres by rf magnetron sputtering at room temperature. The structural, electrical, and optical properties of the prepared films were investigated using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, X-ray photoelectron spectroscopy, and ultraviolet–visible spectrometry, and their dependence on deposition atmosphere (i.e. H{sub 2} / (H{sub 2} + Ar) ratio) was studied. The resulting films showed a (0 0 2) diffraction peak, indicating a typical wurtzite structure, and the optimal film crystallinity was obtained with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%. The electrical resistivity of AFZO films decreased to 9.16 × 10{sup −4} Ω-cm, which was lower than ZnO:Al and ZnO:F films due to double doping effect of Al and F. The resistivity further decreased to below 5 × 10{sup −4} Ω-cm for the AFZO film with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%–5%. All the films regardless of hydrogen content displayed high transmittances (> 92%) in the visible wavelength range. Applying the developed AFZO films as front transparent electrodes, amorphous Si thin film solar cells were fabricated and the open-circuit voltage, fill factor, and efficiency of the cell with the hydrogenated AFZO film were improved in contrast to those without the hydrogenated film. - Highlights: • H{sub 2} doping improves optoelectronic properties of Al, F co-doped ZnO (AFZO) films. • Resistivity of AFZO films decreases to 4.4 × 10{sup −4} Ω-cm with the 3% H{sub 2}/(Ar + H{sub 2}) ratio. • AFZO films show high average visible transmittances of above 92%. • Efficiency of a-Si thin film solar cells is improved by AFZO:H as front electrode.

  13. Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2013-01-01

    Full Text Available Optimization of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1-xOx:H by very high frequency plasma enhanced chemical vapor deposition 40 MHz method for use as a p-layer of a-Si:H solar cells was performed. The properties of p-μc-Si1-xOx:H films were characterized by conductivity, Raman scattering spectroscopy, and spectroscopic ellipsometry. The wide optical band gap p-μc-Si1-xOx:H films were optimized by CO2/SiH4 ratio and H2/SiH4 dilution. Besides, the effects of wide-gap p-μc-Si1-xOx:H layer on the performance of a-Si:H solar cells with various optical band gaps of p-layer were also investigated. Furthermore, improvements of open circuit voltage, short circuit current, and performance of the solar cells by using the effective wide-gap p-μc-Si1-xOx:H were observed in this study. These results indicate that wide-gap p-μc-Si1-xOx:H is promising to use as window layer in a-Si:H solar cells.

  14. Antifuse with a single silicon-rich silicon nitride insulating layer

    Science.gov (United States)

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  15. Evident Enhancement of Photoelectrochemical Hydrogen Production by Electroless Deposition of M-B (M = Ni, Co) Catalysts on Silicon Nanowire Arrays.

    Science.gov (United States)

    Yang, Yong; Wang, Mei; Zhang, Peili; Wang, Weihan; Han, Hongxian; Sun, Licheng

    2016-11-09

    Modification of p-type Si surface by active and stable earth-abundant electrocatalysts is an effective strategy to improve the sluggish kinetics for the hydrogen evolution reaction (HER) at p-Si/electrolyte interface and to develop highly efficient and low-cost photocathodes for hydrogen production from water. To this end, Si nanowire (Si-NW) array has been loaded with highly efficient electrocatalysts, M-B (M = Ni, Co), by facile and quick electroless plating to build M-B catalyst-modified Si nanowire-array-textured photocathodes for water reduction to H2. Compared with the bare Si-NW array, composite Si-NWs/M-B arrays display evidently enhanced photoelectrochemical (PEC) performance. The onset potential (Vphon) of cathodic photocurrent is positively shifted by 530-540 mV to 0.44-0.45 V vs RHE, and the short-circuit current density (Jsc) is up to 19.5 mA cm(-2) in neutral buffer solution under simulated 1 sun illumination. Impressively, the half-cell photopower conversion efficiencies (ηhc) of the optimized Si-NWs/Co-B (2.53%) and Si-NWs/Ni-B (2.45%) are comparable to that of Si-NWs/Pt (2.46%). In terms of the large Jsc, Vphon, and ηhc values, as well as the high Faradaic efficiency, Si-NWs/M-B electrodes are among the top performing Si photocathodes which are modified with HER electrocatalysts but have no buried solid/solid junction.

  16. Composition of macro- and microcrystalline paraffin waxes; Ueber die Zusammensetzung von makro- und mikrokristallinen Paraffinen

    Energy Technology Data Exchange (ETDEWEB)

    Matthaei, M.; Butz, Th. [Schuemann Sasol GmbH, Hamburg (Germany); Geissler, A. [Hochschule Zittau/Goerlitz (Germany)

    2002-09-01

    This paper reviews investigations into the composition of macro- and micro-crystalline paraffin waxes, focussed on the structure of non n-alkanes. The review covers a wide spectrum of investigations from the last 50 years. Applied analytical methods and results of paraffin wax analysis are compiled. The knowledge about qualitative and quantitative composition of non n-alkanes in paraffin waxes is mainly based on older publications. These results are differing from each other since different products and different analytical methods have been used. The paper refers to ongoing investigations based on the current instrumental analytics. (orig.)

  17. Preparation of microcrystalline mixtures for calibration of laser microbeam ionisation mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Ignatova, V. E-mail: velislav@uia.ua.ac.be; Vaeck, L. van; Ham, R. van; Adriaens, A.; Adams, F

    2002-03-11

    In this paper we describe the optimized experimental procedure and the apparatus to prepare microcrystalline samples of inorganic salt mixtures to be used as molecular standards in Laser Microprobe Mass Spectrometry (LMMS). Experimental data show the suitability of the approach for preparation of solid mixtures of various inorganic salts. The structure and homogeneity of the samples are studied by Scanning Electron Microscopy and Fourier Transform LMMS. Specifically, the in-sample and between-sample reproducibility reveals that the method allows the local sample composition to be sufficiently homogeneous for subsequent use in the semi-quantitative calibration of the molecular signals in LMMS.

  18. Preparation of microcrystalline mixtures for calibration of laser microbeam ionisation mass spectrometry

    CERN Document Server

    Ignatova, V A; Ham, R V; Adriaens, A; Adams, F

    2002-01-01

    In this paper we describe the optimized experimental procedure and the apparatus to prepare microcrystalline samples of inorganic salt mixtures to be used as molecular standards in Laser Microprobe Mass Spectrometry (LMMS). Experimental data show the suitability of the approach for preparation of solid mixtures of various inorganic salts. The structure and homogeneity of the samples are studied by Scanning Electron Microscopy and Fourier Transform LMMS. Specifically, the in-sample and between-sample reproducibility reveals that the method allows the local sample composition to be sufficiently homogeneous for subsequent use in the semi-quantitative calibration of the molecular signals in LMMS.

  19. Densification-induced conductivity percolation in high-porosity pharmaceutical microcrystalline cellulose compacts

    Science.gov (United States)

    Strømme, M.; Niklasson, G. A.; Ek, R.

    2003-01-01

    The percolation theory is established as a useful tool in the field of pharmaceutical materials science. It is shown that percolation theory, developed for analyzing insulator-conductor transitions, can be applied to describe imperfect dc conduction in pharmaceutical microcrystalline cellulose during densification. The system, in fact, exactly reproduces the values of the percolation threshold and exponent estimated for a three-dimensional random continuum. Our data clearly show a crossover from a power-law percolation theory region to a linear effective medium theory region at a cellulose porosity of ˜0.7.

  20. Microcrystalline coatings deposited by series double-pole electro-pulse discharge and its high-temperature oxidation behavior

    Institute of Scientific and Technical Information of China (English)

    徐强; 何业东; 王德仁; 齐慧滨; 李正伟; 高唯

    2002-01-01

    A new technique--series electro-pulse discharge (SEPD)--was developed as a surface coating process. In this process, both positive and negative poles of a pulse power were used as the depositing electrodes and the substrate alloy was used as an induction electrode. The physical process for such SEPD was tested by measuring the relationship between the discharge voltages and gaps in a pin-plate-pin system. Microcrystalline Ni20Cr alloy coatings and oxide- dispersed Ni20Cr alloy coatings were prepared on Ni20Cr alloy surface by using a vibrating SEPD device. Oxidation at 950℃ in ambient air showed that the microcrystalline Ni20Cr alloy coatings greatly improved the oxidation resistance of the substrate alloy. The addition of dispersed Y2O3 nano-particles into the microcrystalline coatings was found to further reduce the oxidation rate and enhance the oxide spallation resistance.

  1. Fermentative hydrogen production and bacterial community structure in high-rate anaerobic bioreactors containing silicone-immobilized and self-flocculated sludge.

    Science.gov (United States)

    Wu, Shu-Yii; Hung, Chun-Hsiung; Lin, Chi-Neng; Chen, Hsin-Wei; Lee, An-Sheng; Chang, Jo-Shu

    2006-04-01

    A novel continuously stirred anaerobic bioreactor (CSABR) seeded with silicone-immobilized sludge was developed for high-rate fermentative H2 production using sucrose as the limiting substrate. The CSABR system was operated at a hydraulic retention time (HRT) of 0.5-6 h and an influent sucrose concentration of 10-40 g COD/L. With a high feeding sucrose concentration (i.e., 30-40 g COD/L) and a short HRT (0.5 h), the CSABR reactor produced H2 more efficiently with the highest volumetric rate (VH2) of 15 L/h/L (i.e., 14.7 mol/d/L) and an optimal yield of ca. 3.5 mol H2/mol sucrose. The maximum VH2 value obtained from this work is much higher than any other VH2 values ever documented. Formation of self-flocculated granular sludge occurred during operation at a short HRT. The granule formation is thought to play a pivotal role in the dramatic enhancement of H2 production rate, because it led to more efficient biomass retention. A high biomass concentration of up to 35.4 g VSS/L was achieved even though the reactor was operated at an extremely low HRT (i.e., 0.5 h). In addition to gaining high biomass concentrations, formation of granular sludge also triggered a transition in bacterial community structure, resulting in a nearly twofold increase in the specific H2 production rate. According to denatured-gradient-gel-electrophoresis analysis, operations at a progressively decreasing HRT resulted in a decrease in bacterial population diversity. The culture with the best H2 production performance (at HRT = 0.5 h and sucrose concentration = 30 g COD/L) was eventually dominated by a presumably excellent H2-producing bacterial species identified as Clostridium pasteurianum.

  2. Color changing in denture base polyamide 12 and polyamide microcrystalline after polishing in laboratory and dental clinic

    Science.gov (United States)

    Sari, N. M. G. A. W.; Fardaniah, S.; Masulili, C.

    2017-08-01

    This study’s purpose was to compare color changes from polyamide 12 and polyamide microcrystalline materials. Each material was divided into two groups, polished with laboratory and clinical polishing equipment, and then immersed in a 28 °C coffee solution for seven days. Surface roughness was measured with a profilometer before the immersion. Color (L*, a*, and b*) was measured using a spectrophotometer before and after immersion. There were no significant color changes in the polyamide 12 and polyamide microcrystalline materials after immersion in the coffee solution.

  3. Solar water splitting with a composite silicon/metal oxide semiconductor electrode

    Science.gov (United States)

    Nakato, Yoshihiro; Kato, Naoaki; Imanishi, Akihito; Sugiura, Takashi; Ogawa, Shunsuke; Yoshida, Norimitsu; Nonomura, Shuichi

    2006-08-01

    We have studied solar water splitting with a composite semiconductor electrode, composed of an n-i-p junction amorphous silicon (a-Si, E g~ 1.7 eV) layer, an indium tin oxide (ITO) layer, and a tungsten trioxide (WO 3, E g 2.8 eV) particulate layer. The n-i-p a-Si layer, which had more accurately a structure of n-type microcrystalline ( c) 3C-SiC:H (25 nm)/i-type a-Si:H (400 nm)/p-type a-SiC x:H (25 nm), was prepared on a TiO II-covered F-doped SnO II (FTO)/glass plate by a Hot-Wire CVD method. The ITO layer (100 nm thick) was deposited on the p-type a-Si by the DC magnetron sputtering method, and the WO3 particulate layer was formed by a doctor-blade method, using a colloidal solution of commercial WO 3 powder of 10-30 nm in diameter. The composite electrode thus prepared was finally heat-treated at 300°C for 1 h. The anodic (water oxidation) photocurrent for the composite electrode in 0.1 M Na IISO 4 yielded an IPCE (incident photon to current efficiency) of about 6 % at 400 nm and was stable for more than 24 h. Besides, the onset potential lay a little (by about 0.05 V) more negative than the equilibrium hydrogen evolution potential, indicating a possibility of solar water splitting with no external bias. A preliminary result for the water photooxidation with an "n- GaP/p-Si/Pt dot" electrode is also reported briefly.

  4. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-01

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  5. Correlation between SiH2/SiH and light-induced degradation of p-i-n hydrogenated amorphous silicon solar cells

    Science.gov (United States)

    Keya, Kimitaka; Kojima, Takashi; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2016-07-01

    We have measured the hydrogen content ratio I SiH2/I SiH associated with Si-H2 and Si-H bonds in p-i-n (PIN) a-Si:H solar cells by Raman spectroscopy. With decreasing I SiH2/I SiH, the efficiency, short-circuit current density, open-circuit voltage, and fill factor of PIN a-Si:H solar cells after light soaking tend to increase. Namely, I SiH2/I SiH correlates well with light-induced degradation of the cells. While a single I-layer has a low I SiH2/I SiH of 0.03-0.09, a PIN cell has I SiH2/I SiH = 0.18 because many Si-H2 bonds exist in the P-layer and at the P/I interface of the PIN solar cells. To realize PIN solar cells with higher stability, we must suppress Si-H2 bond formation in the P-layer and at the P/I interface.

  6. Crystallinity and thermal resistance of microcrystalline cellulose prepared from manau rattan (Calamusmanan)

    Science.gov (United States)

    Rizkiansyah, Raden Reza; Mardiyati, Steven, Suratman, R.

    2016-04-01

    The objective of this study was to prepare microcrystalline cellulose from Manau rattan (Calamusmanan) and to investigate the influence of concentration of sulfuric acid and hydrolysis time on crystallinity and thermal resistance of the microcrystalline cellulose (MCC). In this research, MCC was extracted through two stages, which is alkalization and acid hydrolysis. Alkalization was prepared by soaking manau rattan powder into sodium hydroxide (NaOH) 17.5wt% at 100°C for 8 hours. Acid hydrolysis was prepared by using sulfuric acid with concentration 0.1 M; 0.3 M; and 0.5 M for 4, 6, 8 and 10 hours. Crystallinity of MCC was measured by XRD, and thermal resistance was characterized by TGA. MCC was successfully extracted from manau rattan. The highest crystallinity of MCC obtained was 72.42% which prepared by acid hydrolysis with concentration 0.5 M for 10 hours. MCC prepared by acid hydrolysis with concentration 0.5 M for 10 hours not only resulted the highest crystallinity but also the best thermal resistance.

  7. Development and characterization of hybrid materials based on biodegradable PLA matrix, microcrystalline cellulose and organophilic silica

    Directory of Open Access Journals (Sweden)

    Fernanda Abbate dos Santos

    2014-10-01

    Full Text Available The goal of this work was to investigate the production and properties of hybrid materials based on poly(lactic acid (PLA, employing microcrystalline cellulose (MCC and organophilic silica (R972 as fillers. The composites were obtained by solution casting to form films. Each nanoparticle was incorporated at 3 wt. %, relative to the polymer matrix. In this experiment, four films were obtained (PLA, PLA/MCC, PLA/R972 and PLA/MCC/R972. The films properties were evaluated by X-ray diffractometry, nuclear magnetic resonance, Fourier transform infrared spectroscopy and mechanical properties. The results showed that each nanoparticle, added individually or both combined, had different effect on the final properties of the films. Microcrystalline cellulose can act as nucleating agent for the crystallization of PLA. Silica promoted an increase in rigidity, due to the strong intermolecular forces, while MCC addition promoted an increase in the molecular mobility of the polymeric chains. The PLA/MCC/R972 film showed the highest crystallinity degree and tensile modulus. This film presented a T1H value between both values found for PLA/MCC and PLA/R972 films. The results indicated that silica R972 could promote a decrease of the surface tension between PLA and cellulose.

  8. Preparation and Characterization of Cellulose Microcrystalline (MCC) from Fiber of Empty Fruit Bunch Palm Oil

    Science.gov (United States)

    Nasution, H.; Yurnaliza; Veronicha; Irmadani; Sitompul, S.

    2017-03-01

    Alpha cellulose which was isolated from cellulose of fiber empty fruit bunch palm oil was hidrolized with hydrochloric acid (2,5N) at 80°C to produce microcrystalline cellulose (MCC). Microcrystalline cellulose is an important additional ingredient in the pharmaceutical, food, cosmetics, and structural composites. In this study, MCC, alpha cellulose, and cellulose were characterized and thereafter were compared. Characterizations were made using some equipment such as x-ray diffraction (XRD), Fourier transform infrared (FTIR), scanning electron microscopy (SEM) and thermogravimetry analyzer (TGA). X-ray diffraction and infrared spectroscopy were studied to determine crystallinity and molecular structure of MCC, where scanning electron microscopy images were conducted for information about morfology of MCC. Meanwhile, thermal resistance of MCC was determined using thermogravimetry analyzer (TGA). From XRD and FTIR, the obtained results showed that the crystalline part was traced on MCC, where the –OH and C-O groups tended to reduced as alpha cellulose has changed to MCC. From SEM the image showed the reduction of particle size of MCC, while the thermal resistance of MCC was found lower as compared with cellulose and alpha cellulose as well, which was attributed to the lower molecular weight of MCC.

  9. Silicon spintronics.

    Science.gov (United States)

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  10. Investigating the role of hydrogen in ultra-nanocrystalline diamond thin film growth

    Science.gov (United States)

    Birrell, James; Gerbi, J. E.; Auciello, O. A.; Carlisle, J. A.

    2006-08-01

    Hydrogen has long been known to be critical for the growth of high-quality microcrystalline diamond thin films as well as homoepitaxial single-crystal diamond. A hydrogen-poor growth process that results in ultra-nanocrystalline diamond thin films has also been developed, and it has been theorized that diamond growth with this gas chemistry can occur in the absence of hydrogen. This study investigates the role of hydrogen in the growth of ultra-nanocrystalline diamond thin films in two different regimes. First, we add hydrogen to the gas phase during growth, and observe that there seems to be a competitive growth process occurring between microcrystalline diamond and ultra-nanocrystalline diamond, rather than a simple increase in the grain size of ultra-nanocrystalline diamond. Second, we remove hydrogen from the plasma by changing the hydrocarbon precursor from methane to acetylene and observe that there does seem to be some sort of lower limit to the amount of hydrogen that can sustain ultra-nanocrystalline diamond growth. We speculate that this is due to the amount of hydrogen needed to stabilize the surface of the growing diamond nanocrystals.

  11. Hydrogen from renewable resources research

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, P.K.; McKinley, K.R.

    1990-07-01

    In 1986 the Hawaii Natural Energy Institute (HNEI) and the Florida Solar Energy Center (FSEC) were contracted by the Solar Energy Research Institute (SERI) to conduct an assessment of hydrogen production technologies and economic feasibilities of the production and use of hydrogen from renewable resources. In the 1989/90 period all monies were directed toward research and development with an emphasis on integration of tasks, focusing on two important issues, production and storage. The current year's efforts consisted of four tasks, one task containing three subtasks: Hydrogen Production by Gasification of Glucose and Wet Biomass in Supercritical Water; Photoelectrochemical Production of Hydrogen; Photoemission and Photoluminescence Studies of Catalyzed Photoelectrode Surfaces for Hydrogen Production; Solar Energy Chemical Conversion by Means of Photoelectrochemical (PEC) Methods Using Coated Silicon Electrodes; Assessment of Impedance Spectroscopy Methods for Evaluation of Semiconductor-Electrolyte Interfaces; Solar Energy Conversion with Cyanobacteria; Nonclassical Polyhydride Metal Complexes as Hydrogen Storage Materials. 61 refs., 22 figs., 11 tabs.

  12. Hydrogen from renewable resources research

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, P.K.; McKinley, K.R.

    1990-07-01

    In 1986 the Hawaii Natural Energy Institute (HNEI) and the Florida Solar Energy Center (FSEC) were contracted by the Solar Energy Research Institute (SERI) to conduct an assessment of hydrogen production technologies and economic feasibilities of the production and use of hydrogen from renewable resources. In the 1989/90 period all monies were directed toward research and development with an emphasis on integration of tasks, focusing on two important issues, production and storage. The current year's efforts consisted of four tasks, one task containing three subtasks: Hydrogen Production by Gasification of Glucose and Wet Biomass in Supercritical Water; Photoelectrochemical Production of Hydrogen; Photoemission and Photoluminescence Studies of Catalyzed Photoelectrode Surfaces for Hydrogen Production; Solar Energy Chemical Conversion by Means of Photoelectrochemical (PEC) Methods Using Coated Silicon Electrodes; Assessment of Impedance Spectroscopy Methods for Evaluation of Semiconductor-Electrolyte Interfaces; Solar Energy Conversion with Cyanobacteria; Nonclassical Polyhydride Metal Complexes as Hydrogen Storage Materials. 61 refs., 22 figs., 11 tabs.

  13. Fenton chemistry-based detemplation of an industrially relevant microcrystalline beta zeolite. Optimization and scaling-up studies

    NARCIS (Netherlands)

    Ortiz-Iniesta, Maria Jesus; Melian-Cabrera, Ignacio

    2015-01-01

    A mild template removal of microcrystalline beta zeolite, based on Fenton chemistry, was optimized. Fenton detemplation was studied in terms of applicability conditions window, reaction rate and scale up. TGA and CHN elemental analysis were used to evaluate the detemplation effectiveness, while 'CP,

  14. Facile synthesis of TiO2/microcrystalline cellulose nanocomposites: photocatalytically active material under visible light irradiation

    Science.gov (United States)

    Doped TiO2 nanocomposites were prepared in situ by a facile and simple synthesis utilizing benign and renewable precursors such as microcrystalline cellulose (MC) and TiCl4 through hydrolysis in alkaline medium without the addition of organic solvents. The as-prepared nanocompos...

  15. Determination of nickel by flame atomic-absorption spectrophotometry after separation by adsorption of its nioxime complex on microcrystalline naphthalene.

    Science.gov (United States)

    Nagahiro, T; Puri, B K; Katyal, M; Satake, M

    1984-11-01

    A method has been developed for the determination of nickel in alloys by flame atomic-absorption spectrophotometry after formation of a water-insoluble complex, its adsorption on microcrystalline naphthalene, and dissolution of the complex and naphthalene in nitric acid and xylene.

  16. Facile synthesis of TiO2/microcrystalline cellulose nanocomposites: photocatalytically active material under visible light irradiation

    Science.gov (United States)

    Doped TiO2 nanocomposites were prepared in situ by a facile and simple synthesis utilizing benign and renewable precursors such as microcrystalline cellulose (MC) and TiCl4 through hydrolysis in alkaline medium without the addition of organic solvents. The as-prepared nanocompos...

  17. Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

    2010-01-01

    We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

  18. Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

    Science.gov (United States)

    Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

    2014-01-01

    Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

  19. Effect on Dissolvability of Microcrystalline Cellulose through Activation%微晶纤维素的活化对其溶解性能的影响

    Institute of Scientific and Technical Information of China (English)

    任丹; 李丹; 刘萍; 孙晓; 张瑞涵; 方健

    2012-01-01

    Microcrystalline cellulose(MCC) was activation treated by amine,water and ultrasonic respectively.The dissolve time in NaOH-Urea-Thiourea solution,degree of polymerization(DP),solubility,the surface of fiber,crystallinity and effect on molecule hydrogen bonding of MCC before and after activation were studied.The result showed that ultrasonic activation is better than the other two activation methods,which is more convenient to improve the dissolvability of MCC with treating power from 60 to 99 percent and treating time from 60 to 120 minutes.%用胺活化、水活化与超声波活化分别处理了微晶纤维素(MCC)。研究了活化前后微晶纤维素在氢氧化钠-尿素-硫脲中的溶解时间、聚合度、溶解度、纤维表面形态、结晶度以及对分子氢键的影响。结果表明,超声波活化较其他2种活化方法效果更好,且处理功率为60%~99%、处理时间在60~120min内更有利于改善微晶纤维素的溶解性能。

  20. Dissolution profile of novel composite pellet cores based on different ratios of microcrystalline cellulose and isomalt.

    Science.gov (United States)

    Luhn, Oliver; Kállai, Nikolett; Nagy, Zsombor Kristóf; Kovács, Kristóf; Fritzsching, Bodo; Klebovich, Imre; Antal, István

    2012-08-01

    There is a growing interest towards the application of inert cores as starting materials for pharmaceutical pellet manufacturing. They serve as alternatives to develop and adapt a relatively simple manufacturing technology compared with an extrusion/spheronisation process. The major objective of this study was to investigate the effect of the compositions of core materials on the drug release profile. Pure microcrystalline cellulose (MCC), isomalt and different types of novel composite MCC-isomalt cores were layered with model drug (sodium diclofenac) and were coated with acrylic polymer. The effect of the osmolality in the gastrointestinal tract was simulated using glucose as osmotically active agent during in vitro dissolution tests. The results demonstrated the dependence of drug dissolution profile on the ratio of MCC and isomalt in the core and the influence of osmotic properties of the dissolution medium. Isomalt used in the composite core was able to decrease the vulnerability of the dissolution kinetics to the changes in the osmotic environment.