Structural stability of hydrogenated amorphous carbon overcoats used in heat-assisted magnetic recording investigated by rapid thermal annealing

KAUST Repository

Wang, N.; Komvopoulos, K.; Rose, F.; Marchon, B.

2013-01-01

Ultrathin amorphous carbon (a-C) films are extensively used as protective overcoats of magnetic recording media. Increasing demands for even higher storage densities have necessitated the development of new storage technologies, such as heat-assisted magnetic recording (HAMR), which uses laser-assisted heating to record data on high-stability media that can store single bits in extremely small areas (∼1 Tbit/in.2). Because HAMR relies on locally changing the coercivity of the magnetic medium by raising the temperature above the Curie temperature for data to be stored by the magnetic write field, it raises a concern about the structural stability of the ultrathin a-C film. In this study, rapid thermal annealing (RTA) experiments were performed to examine the thermal stability of ultrathin hydrogenated amorphous carbon (a-C:H) films deposited by plasma-enhanced chemical vapor deposition. Structural changes in the a-C:H films caused by RTA were investigated by x-ray photoelectron spectroscopy, Raman spectroscopy, x-ray reflectivity, and conductive atomic force microscopy. The results show that the films exhibit thermal stability up to a maximum temperature in the range of 400-450 °C. Heating above this critical temperature leads to hydrogen depletion and sp 2 clustering. The critical temperature determined by the results of this study represents an upper bound of the temperature rise due to laser heating in HAMR hard-disk drives and the Curie temperature of magnetic materials used in HAMR hard disks. © 2013 American Institute of Physics.

Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

International Nuclear Information System (INIS)

Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

2004-01-01

Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells

Directory of Open Access Journals (Sweden)

Seung Yeop Myong

2007-01-01

Full Text Available The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon- (a-Si:H- based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the two-component model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.

Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

2010-01-01

We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

Effect of the annealing temperature for the hydrogen Q-degradation on superconducting cavities

International Nuclear Information System (INIS)

Ota, Tomoko; Sukenobu, Satoru; Tanabe, Yoshio; Onishi, Yoshimichi; Noguchi, Shuichi; Ono, Masaaki; Saito, Kenji; Shishido, Toshio; Yamazaki, Yoshishige

1997-01-01

Hydrogen Q-degradation was studied in niobium superconducting cavities prepared by barrel polishing, and electropolishing without annealing, though a fast cooling down of cavities. Cavity performance with various annealing temperature were tested using a 1.3GHz single-cell cavity to compare the effects of annealing temperature for hydrogen Q-degradation. (author)

Improved thermal stability of gas-phase Mg nanoparticles for hydrogen storage

NARCIS (Netherlands)

Krishnan, Gopi; Palasantzas, G.; Kooi, B. J.

2010-01-01

This work focuses on improving the thermal stability of Mg nanoparticles (NPs) for use in hydrogen storage. Three ways are investigated that can achieve this goal. (i) Addition of Cu prevents void formation during NP production and reduces the fast evaporation/voiding of Mg during annealing. (ii)

Physical properties of Fe doped In_2O_3 magnetic semiconductor annealed in hydrogen at different temperature

International Nuclear Information System (INIS)

Baqiah, H.; Ibrahim, N.B.; Halim, S.A.; Chen, S.K.; Lim, K.P.; Kechik, M.M. Awang

2016-01-01

The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600 °C) on physical properties of In_2_−_xFe_xO_3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In_2O_3 phase structure when annealed in hydrogen at 300–500 °C, however when annealed in hydrogen at 600 °C the film has a mixed phase structure of In_2O_3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300–500 °C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300 °C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×10"1"9 cm"−"3, while film annealed at 500 °C has both good electrical (ρ=0.05 Ω.cm and n=2.2×10"1"9 cm"−"3) and magnetic properties, Ms=21 emu/cm"-"3. - Highlights: • Physical properties of films were sensitive to hydrogen-annealing temperature. • Magnetisation, Ms, of films increased with increase of hydrogen annealing temperature. • Film annealed in hydrogen at 300 °C has the lowest resistivity, ρ=0.03 Ω cm. • Film annealed in hydrogen at 600 °C has highest magnetisation, Ms=30 emu/cm"3.

Rapid thermal annealing of phosphorus implanted silicon

International Nuclear Information System (INIS)

Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

1985-01-01

Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

International Nuclear Information System (INIS)

Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

2012-01-01

The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp 2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by

Thermal annealing studies in muscovite and in quartz

International Nuclear Information System (INIS)

Roberts, J.H.; Gold, R.; Ruddy, F.H.

1979-06-01

In order to use Solid State Track Recorders (SSTR) in environments at elevated temperatures, it is necessary to know the thermal annealing characteristics of various types of SSTR. For applications in the nuclear energy program, the principal interest is focused upon the annealing of fission tracks in muscovite mica and in quartz. Data showing correlations between changes in track diameters and track densities as a function of annealing time and temperature will be presented for Amersil quartz glass. Similar data showing changes in track lengths and in track densities will be presented for mica. Time-temperature regions will be defined where muscovite mica can be accurately applied with negligible correction for thermal annealing

Low temperature thermal annealing in fast neutron-irradiated potassium permanganate

Energy Technology Data Exchange (ETDEWEB)

Owens, C W; Lecington, W C [New Hampshire Univ., Durham (USA). Dept. of Chemistry

1975-01-01

The effect of thermal annealing on the retention of recoil /sup 54/Mn as permanganate in crystalline KMnO/sub 4/ irradiated with fast neutrons at liquid nitrogen temperature has been studied. The retention after 4 hrs of annealing increases from about 8% at -196/sup 0/ to a maximum of 61% at 180/sup 0/, then decreases at higher temperatures. A single activation energy (approximately 0.01 eV) applies to the thermal annealing process between -196/sup 0/ and -40/sup 0/. Extrapolation of the data suggests that below -229/sup 0/ no thermal annealing would occur.

Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

2015-07-15

In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass

Energy Technology Data Exchange (ETDEWEB)

Rau, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)], E-mail: bjoern.rau@helmholtz-berlin.de; Weber, T.; Gorka, B.; Dogan, P.; Fenske, F.; Lee, K.Y.; Gall, S.; Rech, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)

2009-03-15

In this report, we discuss the influence of rapid thermal annealing (RTA) on the performance of polycrystalline Si (poly-Si) thin-film solar cells on glass where the poly-Si layers are differently prepared. The first part presents a comprehensive study of RTA treatments on poly-Si thin-films made by solid phase crystallization (SPC) (standard material of CSG Solar AG, Thalheim). By varying both plateau temperature (up to 1050 deg. C) and duration (up to 1000 s) of the annealing profile, we determined the parameters for a maximum open-circuit voltage (V{sub OC}). In addition, we applied our standard plasma hydrogenation treatment in order to passivate the remaining intra-grain defects and grain boundaries by atomic hydrogen resulting in a further increase of V{sub OC}. We found, that the preceding RTA treatment increases the effect of hydrogenation already at comparable low RTA temperatures. The effect on hydrogenation increases significantly with RTA temperature. In a second step we investigated the effect of the RTA and hydrogenation on large-grained poly-Si films based on the epitaxial thickening of poly-Si seed layers.

Reduction of thermal quenching of biotite mineral due to annealing

International Nuclear Information System (INIS)

Kalita, J.M.; Wary, G.

2014-01-01

Graphical abstract: - Highlights: • Thermoluminescence of X-ray irradiate biotite was studied at various heating rates. • Thermal quenching was found to decrease with increase in annealing temperature. • Due to annealing one trap level was vanished and a new shallow trap level generated. • The new trap level contributes low thermally quenched thermoluminescence signal. - Abstract: Thermoluminescence (TL) of X-ray irradiated natural biotite annealed at 473, 573, 673 and 773 K were studied within 290–480 K at various linear heating rates (2, 4, 6, 8 and 10 K/s). A Computerized Glow Curve Deconvolution technique was used to study various TL parameters. Thermal quenching was found to be very high for un-annealed sample, however it decreased significantly with increase in annealing temperature. For un-annealed sample thermal quenching activation energy (W) and pre-exponential frequency factor (C) were found to be W = (2.71 ± 0.05) eV and C = (2.38 ± 0.05) × 10 12 s −1 respectively. However for 773 K annealed sample, these parameters were found to be W = (0.63 ± 0.03) eV, C = (1.75 ± 0.27) × 10 14 s −1 . Due to annealing, the initially present trap level at depth 1.04 eV was vanished and a new shallow trap state was generated at depth of 0.78 eV which contributes very low thermally quenched TL signal

Integrated processing for the treatment of materials applied to thermal compression of hydrogen

International Nuclear Information System (INIS)

Rodriguez, M.G; Esquivel, M. R

2009-01-01

In this work, AB 5 intermetallics are synthesized by low energy mechanical alloying according to: AB 5 + AB 5 = AB 5 . The obtained intermetallics are annealed at 600 oC to optimize both the microstructural and hydrogen sorption properties. Then, the material is applied to the design of schemes for thermal compression of hydrogen (TCH). These results are obtained within the frame of a research project related to Energy and Environment and focused on the replacement on fossil supply systems by a hydrogen based one. [es

Thermal annealing of tilted fiber Bragg gratings

Science.gov (United States)

González-Vila, Á.; Rodríguez-Cobo, L.; Mégret, P.; Caucheteur, C.; López-Higuera, J. M.

2016-05-01

We report a practical study of the thermal decay of cladding mode resonances in tilted fiber Bragg gratings, establishing an analogy with the "power law" evolution previously observed on uniform gratings. We examine how this process contributes to a great thermal stability, even improving it by means of a second cycle slightly increasing the annealing temperature. In addition, we show an improvement of the grating spectrum after annealing, with respect to the one just after inscription, which suggests the application of this method to be employed to improve saturation issues during the photo-inscription process.

Quantitative analysis of swelling on annealing of hydrogen ion implanted diamond single crystals

International Nuclear Information System (INIS)

Kuznetsov, G.F.

2006-01-01

Local swelling observed upon high-temperature annealing of natural diamond single crystals implanted by 350-keV hydrogen ions with a dose of 12 10 16 cm 2 is studied. Based on room-temperature measurements, Griffith cracking criterion in combination with gas law, model quantitative calculations of the swelling size and the amount of hydrogen molecules in a swelling have been carried out for the first time. At room temperature, T 1 293 K, the amount of local elastic stresses in the upper layer of the diamond is counterbalanced by inner hydrogen pressure. Behavior of the gas bubbles with the annealing temperature increase up to 1693 K and repeated annealing at a temperature of 1743 K has been calculated [ru

The formation of microvoids in MgO by helium ion implantation and thermal annealing

International Nuclear Information System (INIS)

Veen, A. van; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M.

1999-01-01

The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3 He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed

The formation of microvoids in MgO by helium ion implantation and thermal annealing

Science.gov (United States)

van Veen, A.; Schut, H.; Fedorov, A. V.; Labohm, F.; Neeft, E. A. C.; Konings, R. J. M.

1999-01-01

The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2 × 10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

The formation of microvoids in MgO by helium ion implantation and thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Veen, A. van E-mail: avveen@iri.tudelft.nl; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M

1999-01-02

The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV {sup 3}He ions with doses varying from 10{sup 15} to 10{sup 16} cm{sup -2} and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10{sup 15} cm{sup -2} annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

Evidence for hydrogen-assisted recovery of cold-worked palladium: hydrogen solubility and mechanical properties studies

Directory of Open Access Journals (Sweden)

Maria Ferrer

2017-07-01

Full Text Available The influence of hydrogen as an agent to accelerate the thermal recovery of cold-worked palladium has been investigated. The techniques used to characterize the effects of hydrogen on the thermal recovery of palladium were hydrogen solubility and mechanical property measurements. Results show that the presence of modest amounts of hydrogen during annealing of cold-worked palladium does enhance the degree of thermal recovery, with a direct correlation between the amount of hydrogen during annealing and the degree of recovery. The results indicate that the damage resulting from cold-working palladium can be more effectively and efficiently reversed by suitable heat treatments in the presence of appropriate amounts of hydrogen, as compared to heat treatment in vacuum. The somewhat novel technique of using changes in the hydrogen solubility of palladium as an indicator of thermal recovery has been validated and complements the more traditional technique of mechanical property measurements.

Remarkably Enhanced Room-Temperature Hydrogen Sensing of SnO₂ Nanoflowers via Vacuum Annealing Treatment.

Science.gov (United States)

Liu, Gao; Wang, Zhao; Chen, Zihui; Yang, Shulin; Fu, Xingxing; Huang, Rui; Li, Xiaokang; Xiong, Juan; Hu, Yongming; Gu, Haoshuang

2018-03-23

In this work, SnO₂ nanoflowers synthesized by a hydrothermal method were employed as hydrogen sensing materials. The as-synthesized SnO₂ nanoflowers consisted of cuboid-like SnO₂ nanorods with tetragonal structures. A great increase in the relative content of surface-adsorbed oxygen was observed after the vacuum annealing treatment, and this increase could have been due to the increase in surface oxygen vacancies serving as preferential adsorption sites for oxygen species. Annealing treatment resulted in an 8% increase in the specific surface area of the samples. Moreover, the conductivity of the sensors decreased after the annealing treatment, which should be attributed to the increase in electron scattering around the defects and the compensated donor behavior of the oxygen vacancies due to the surface oxygen adsorption. The hydrogen sensors of the annealed samples, compared to those of the unannealed samples, exhibited a much higher sensitivity and faster response rate. The sensor response factor and response rate increased from 27.1% to 80.2% and 0.34%/s to 1.15%/s, respectively. This remarkable enhancement in sensing performance induced by the annealing treatment could be attributed to the larger specific surface areas and higher amount of surface-adsorbed oxygen, which provides a greater reaction space for hydrogen. Moreover, the sensors with annealed SnO₂ nanoflowers also exhibited high selectivity towards hydrogen against CH₄, CO, and ethanol.

Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

Directory of Open Access Journals (Sweden)

Afarin Bahrami

2012-01-01

Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

Depth profiling of hydrogen in ferritic/martensitic steels by means of a tritium imaging plate technique

International Nuclear Information System (INIS)

Otsuka, Teppei; Tanabe, Tetsuo

2013-01-01

Highlights: ► We applied a tritium imaging plate technique to depth profiling of hydrogen in bulk. ► Changes of hydrogen depth profiles in the steel by thermal annealing were examined. ► We proposed a release model of plasma-loaded hydrogen in the steel. ► Hydrogen is trapped at trapping sites newly developed by plasma loading. ► Hydrogen is also trapped at surface oxides and hardly desorbed by thermal annealing. -- Abstract: In order to understand how hydrogen loaded by plasma in F82H is removed by annealing at elevated temperatures in vacuum, depth profiles of plasma-loaded hydrogen were examined by means of a tritium imaging plate technique. Owing to large hydrogen diffusion coefficients in F82H, the plasma-loaded hydrogen easily penetrates into a deeper region becoming solute hydrogen and desorbs by thermal annealing in vacuum. However the plasma-loading creates new hydrogen trapping sites having larger trapping energy than that for the intrinsic sites beyond the projected range of the loaded hydrogen. Some surface oxides also trap an appreciable amount of hydrogen which is more difficult to remove by the thermal annealing

Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

Energy Technology Data Exchange (ETDEWEB)

Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02841 (Korea, Republic of)

2016-08-15

The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

Thermally-driven hydrogen interaction with single-layer graphene on SiO2/Si substrates

International Nuclear Information System (INIS)

Feijo, Tais Orestes; Rolim, Guilherme Koszeniewski; Radtke, Claudio; Soares, Gabriel Vieira

2016-01-01

Full text: Graphene is a monolayer of carbon with sp 2 hybridization and hexagonal structure. Since all its area is exposed to the atmosphere, it is important to understand how graphene interacts with elements present in the atmosphere, such as hydrogen, oxygen and water, to control the processes of manufacturing [1]. In addition, some studies show that graphene can allow storage of hydrogen for use in fuel cells, which would contribute to the use of clean energies. This study aims to understand the thermally-driven hydrogen interaction with graphene samples. We used samples of graphene deposited on SiO 2 (285 nm) films on Si and then annealed in controlled atmosphere of deuterium (D 2 , natural abundance of 0.15%) at temperatures between 200 and 1000°C. We also investigated hydrogen desorption from graphene using samples previously treated in deuterium at 600°C and afterwards annealed in nitrogen atmosphere between 200 and 1000°C. After annealings, Nuclear Reaction Analysis (NRA) was employed to quantify deuterium, where we observed a large increase in deuterium incorporation above 400°C, with an constant D incorporation until 1000°C. We also observed that the desorption of deuterium from graphene only occurred above 800°C, although D desorption from silicon oxide samples takes place already at 600°C. Raman spectroscopy analysis was performed after each thermal treatment. Results show that defects in the graphene structure increases for higher treatment temperatures in incorporation and in desorption steps. Characterization using X-Ray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) will also be presented. [1] A. C. Ferrari, et al., Nanoscale 7 (2015). (author)

Significant improvement in the thermal annealing process of optical resonators

Science.gov (United States)

Salzenstein, Patrice; Zarubin, Mikhail

2017-05-01

Thermal annealing performed during process improves the quality of the roughness of optical resonators reducing stresses at the periphery of their surface thus allowing higher Q-factors. After a preliminary realization, the design of the oven and the electronic method were significantly improved thanks to nichrome resistant alloy wires and chopped basalt fibers for thermal isolation during the annealing process. Q-factors can then be improved.

Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

Institute of Scientific and Technical Information of China (English)

Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

2009-01-01

Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

Thermal engineering of FAPbI3 perovskite material via radiative thermal annealing and in situ XRD

Science.gov (United States)

Pool, Vanessa L.; Dou, Benjia; Van Campen, Douglas G.; Klein-Stockert, Talysa R.; Barnes, Frank S.; Shaheen, Sean E.; Ahmad, Md I.; van Hest, Maikel F. A. M.; Toney, Michael F.

2017-01-01

Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. Here we present the application of radiative thermal annealing, an easily scalable processing method for synthesizing formamidinium lead iodide (FAPbI3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ X-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space of FAPbI3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI3 annealing time, 10 min at 170 °C, can be significantly reduced to 40 s at 170 °C without affecting the photovoltaic performance. The Johnson-Mehl-Avrami model was used to determine the activation energy for decomposition of FAPbI3 into PbI2. PMID:28094249

Mechanical Properties of Super Duplex Stainless Steel 2507 after Gas Phase Thermal Precharging with Hydrogen

Science.gov (United States)

San Marchi, C.; Somerday, B. P.; Zelinski, J.; Tang, X.; Schiroky, G. H.

2007-11-01

Thermal precharging of super duplex stainless steel 2507 with 125 wppm hydrogen significantly reduced tensile ductility and fracture toughness. Strain-hardened 2507 exhibited more severe ductility loss compared to the annealed microstructure. The reduction of area (RA) was between 80 and 85 pct for both microstructures in the noncharged condition, while reductions of area were 25 and 46 pct for the strain-hardened and annealed microstructures, respectively, after hydrogen precharging. Similar to the effect of internal hydrogen on tensile ductility, fracture toughness of strain-hardened 2507 was lowered from nearly 300 MPa m1/2 in the noncharged condition to less than 60 MPa m1/2 in the hydrogen-precharged condition. While precharging 2507 with hydrogen results in a considerable reduction in ductility and toughness, the absolute values are similar to high-strength austenitic steels that have been tested under the same conditions, and which are generally considered acceptable for high-pressure hydrogen gas systems. The fracture mode in hydrogen-precharged 2507 involved cleavage cracking of the ferrite phase and ductile fracture along oblique planes in the austenite phase, compared to 100 pct microvoid coalescence in the absence of hydrogen. Predictions from a strain-based micromechanical fracture toughness model were in good agreement with the measured fracture toughness of hydrogen-precharged 2507, implying a governing role of austenite for resistance to hydrogen-assisted fracture.

New heating schedule in hydrogen annealing furnace based on process simulation for less energy consumption

International Nuclear Information System (INIS)

Saboonchi, Ahmad; Hassanpour, Saeid; Abbasi, Shahram

2008-01-01

Cold rolled steel coils are annealed in batch furnaces to obtain desirable mechanical properties. Annealing operations involve heating and cooling cycles which take long due to high weight of the coils under annealing. To reduce annealing time, a simulation code was developed that is capable of evaluating more effective schedules for annealing coils during the heating process. This code is additionally capable of accurate determination of furnace turn-off time for different coil weights and charge dimensions. After studying many heating schedules and considering heat transfer mechanism in the annealing furnace, a new schedule with the most advantages was selected as the new operation conditions in the hydrogen annealing plant. The performance of all the furnaces were adjusted to the new heating schedule after experiments had been carried out to ensure the accuracy of the code and the fitness of the new operation condition. Comparison of similar yield of cold rolled coils over two months revealed that specific energy consumption of furnaces under the new heating schedule decreased by 11%, heating cycle time by 16%, and the hydrogen consumption by 14%

New heating schedule in hydrogen annealing furnace based on process simulation for less energy consumption

Energy Technology Data Exchange (ETDEWEB)

Saboonchi, Ahmad [Department of Mechanical Engineering, Isfahan University of Technology, Isfahan 84154 (Iran); Hassanpour, Saeid [Rayan Tahlil Sepahan Co., Isfahan Science and Technology Town, Isfahan 84155 (Iran); Abbasi, Shahram [R and D Department, Mobarakeh Steel Complex, Isfahan (Iran)

2008-11-15

Cold rolled steel coils are annealed in batch furnaces to obtain desirable mechanical properties. Annealing operations involve heating and cooling cycles which take long due to high weight of the coils under annealing. To reduce annealing time, a simulation code was developed that is capable of evaluating more effective schedules for annealing coils during the heating process. This code is additionally capable of accurate determination of furnace turn-off time for different coil weights and charge dimensions. After studying many heating schedules and considering heat transfer mechanism in the annealing furnace, a new schedule with the most advantages was selected as the new operation conditions in the hydrogen annealing plant. The performance of all the furnaces were adjusted to the new heating schedule after experiments had been carried out to ensure the accuracy of the code and the fitness of the new operation condition. Comparison of similar yield of cold rolled coils over two months revealed that specific energy consumption of furnaces under the new heating schedule decreased by 11%, heating cycle time by 16%, and the hydrogen consumption by 14%. (author)

Rapid magnetic hardening by rapid thermal annealing in NdFeB-based nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Chu, K.-T.; Jin, Z Q; Chakka, Vamsi M; Liu, J P [Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States)

2005-11-21

A systematic study of heat treatments and magnetic hardening of NdFeB-based melt-spun nanocomposite ribbons have been carried out. Comparison was made between samples treated by rapid thermal annealing and by conventional furnace annealing. Heating rates up to 200 K s{sup -1} were adopted in the rapid thermal processing. It was observed that magnetic hardening can be realized in an annealing time as short as 1 s. Coercivity of 10.2 kOe in the nanocomposites has been obtained by rapid thermal annealing for 1 s, and prolonged annealing did not give any increase in coercivity. Detailed results on the effects of annealing time, temperature and heating rate have been obtained. The dependence of magnetic properties on the annealing parameters has been investigated. Structural characterization revealed that there is a close correlation between magnetic hardening and nanostructured morphology. The coercivity mechanism was also studied by analysing the magnetization minor loops.

Tunable metal-insulator transitions in bilayer graphene by thermal annealing

OpenAIRE

Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

2012-01-01

Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

Thermal annealing of an embrittled reactor pressure vessel

International Nuclear Information System (INIS)

Mager, T.R.; Dragunov, Y.G.; Leitz, C.

1998-01-01

As a result of the popularity of the Agencies report 'Neutron Irradiation Embrittlement of Reactor Pressure Vessel Steels' of 1975, it was decided that another report on this broad subject would be of use. In this report, background and contemporary views on specially identified areas of the subject are considered as self-contained chapters, written by experts. Chapter 11 deals with thermal annealing of an embrittled reactor pressure vessel. Anneal procedures for vessels from both the US and the former USSR are mentioned schematically, wet anneals at lower temperature and dry anneals above RPV design temperatures are investigated. It is shown that heat treatment is a means of recovering mechanical properties which were degraded by neutron radiation exposure, thus assuring reactor pressure vessel compliance with regulatory requirements

MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

Directory of Open Access Journals (Sweden)

Guillaume Wantz

2012-11-01

Full Text Available Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8% and that increasing the thickness up to 15 nm does not change the device performance. 

Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrate

International Nuclear Information System (INIS)

Brooks, K.G.; Reaney, I.M.; Klissurska, R.; Huang, Y.; Bursill, L.A.; Setter, N.

1994-01-01

The nucleation, growth and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, excess lead addition, and Nb dopant substitution are reported. The use of post pyrolysis oxygen anneals at temperatures in the regime of 350-450 deg C was found to strongly effect the kinetics of subsequent amorphous-pyrochlore perovskite crystallization by rapid thermal annealing. It has also allowed films of reproducible microstructure and textures (both (100) and (111)) to be prepared by rapid thermal annealing. It is suggested that such anneals and pyrolysis temperature affect the oxygen concentration/average Pb valence in the amorphous films prior to annealing. The changes in Pb valence state then affect the stability of the transient pyrochlore phase and thus the kinetics of perovskite crystallization. Nb dopant was also found to influence the crystallization kinetics. 28 refs., 18 figs

Rapid Thermal annealing of silicon layers amorphized by ion implantation

International Nuclear Information System (INIS)

Hasenack, C.M.

1986-01-01

The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

Response of neutron-irradiated RPV steels to thermal annealing

International Nuclear Information System (INIS)

Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

1997-01-01

One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPVs) is to thermally anneal them to restore the fracture toughness properties that have been degraded by neutron irradiation. This paper summarizes experimental results of work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response of several irradiated RPV steels

Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

NARCIS (Netherlands)

Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

2013-01-01

A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

Thermal annealing of gamma irradiated ammonium chloride (Preprint no. RC-37)

International Nuclear Information System (INIS)

Kalkar, C.D.; Lala, Neeta

1991-01-01

Ammonium chloride produces N 2 H 4 + and Cl 2 as the main radiolytic products on gamma irradiation. Thermal annealing has a marked effect on the stability of N 2 H 4 + and Cl 2 . During the thermal annealing the chemical yield of nitrite and iodine was studied by dissolving irradiated ammonium chloride in aqueous sodium nitrate and potassium iodide respectively. The yield of iodine in isochronal annealing showed an exponential behaviour with temperature while that of nitrite showed a decrease and then increases at higher temperatures. The results are explained on the basis of dissociation and recombination of N 2 H 4 + with temperature. (author). 3 refs., 2 figs

Rapid thermal and swift heavy ion induced annealing of Co ion implanted GaN films

International Nuclear Information System (INIS)

Baranwal, V.; Pandey, A. C.; Gerlach, J. W.; Rauschenbach, B.; Karl, H.; Kanjilal, D.; Avasthi, D. K.

2008-01-01

Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180 keV Co ions at three different fluences. As-implanted samples were characterized with secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain the Co depth profiles and the maximum Co concentrations. As-implanted samples were annealed applying two different techniques: rapid thermal annealing and annealing by swift heavy ion irradiation. Rapid thermal annealing was done at two temperatures: 1150 deg. C for 20 s and 700 deg. C for 5 min. 200 MeV Ag ions at two fluences were used for annealing by irradiation. Crystalline structure of the pristine, as-implanted, and annealed samples was investigated using x-ray diffraction, and the results were compared. Improvement of the crystalline quality was observed for rapid thermal annealed samples at the higher annealing temperature as confirmed with rocking curve measurements. The results indicate the presence of Co clusters in these annealed samples. Swift heavy ion irradiation with the parameters chosen for this study did not lead to a significant annealing

Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

Science.gov (United States)

Forrest, Stephen R.; Thompson, Mark E.; Wei, Guodan; Wang, Siyi

2017-09-19

A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

Science.gov (United States)

van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

2016-09-01

We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

DEFF Research Database (Denmark)

Shayesteh, Maryam; O' Connell, Dan; Gity, Farzan

2014-01-01

In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier...... implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance....

Effect of hydrogen adsorption on the formation and annealing of Stone-Wales defects in graphene

Science.gov (United States)

Podlivaev, A. I.; Openov, L. A.

2015-12-01

The heights of energy barriers preventing the formation and annealing of Stone-Wales defects in graphene with a hydrogen atom adsorbed on the defect or in its immediate vicinity have been calculated using the atomistic computer simulation. It has been shown that, in the presence of hydrogen, both barriers are significantly lower than those in the absence of hydrogen. Based on the analysis of the potential energy surface, the frequency factors have been calculated for two different paths of the Stone-Wales transformation, and the temperature dependences of the corresponding annealing times of the defects have been found. The results obtained have been compared with the first-principles calculations and molecular dynamics data.

Effects of post-stress hydrogen annealing on MOS oxides after 60Co irradiation or Fowler-Nordheim injection

International Nuclear Information System (INIS)

Saks, N.S.; Stahlbush, R.E.; Mrstik, B.J.; Rendell, R.W.; Klein, R.B.

1993-01-01

Changes in interface trap density D it have been determined in MOSFETs as a function of time during hydrogen annealing at 295K. Large increases in D it are observed during H 2 annealing in MOSFETs previously stressed by either 60 Co irradiation or Fowler-Nordheim electron injection. The annealing behavior is very similar for both types of stress, which suggests that the D it creation mechanism involves similar chemistry for hydrogen reactions. Studies of the time dependence of D it creation as a function of MOSFET gate length show that the time dependence is limited primarily by lateral diffusion of molecular hydrogen (H 2 ) through the gate oxide. An activation energy of 0.57 eV, which is consistent with H 2 diffusion, is obtained from the temperature dependence

Thermal annealing of recoil 56Mn in strontium permanganate under (n,γ) process

International Nuclear Information System (INIS)

Mishra, Shuddhodan P.; Vijaya

2002-01-01

Chemical stabilization of recoil 56 Mn in strontium permanganate (hydrous and anhydrous) has been investigated with a special reference to pre-and post-activation thermal annealing treatments. The retention of 56 Mn in neutron irradiated strontium permanganate showed significant variation on thermal annealing in both pre-and post-activation heated target. The recoil re-entry process obeys simple first order kinetics and the activation energy deduced for thermal annealing process is very low as computed by classical Arrhenius plots. The results observed are discussed in the light of existing ideas for understanding the recoil stabilization mechanism of parent reformation and the nature of precursors in permanganates. (author)

Rapid thermal pulse annealing

International Nuclear Information System (INIS)

Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

1976-01-01

Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

Surface modification of cellulose acetate membrane using thermal annealing to enhance produced water treatment

Energy Technology Data Exchange (ETDEWEB)

Kusworo, T. D., E-mail: tdkusworo@che.undip.ac.id; Aryanti, N., E-mail: nita.aryanti@gmail.com; Firdaus, M. M. H.; Sukmawati, H. [Chemical Engineering, Faculty of Engineering, Diponegoro University Prof. Soedarto Street, Tembalang, Semarang, 50239, Phone/Fax : (024)7460058 (Indonesia)

2015-12-29

This study is performed primarily to investigate the effect of surface modification of cellulose acetate using thermal annealing on the enhancement of membrane performance for produced water treatment. In this study, Cellulose Acetate membranes were casted using dry/wet phase inversion technique. The effect of additive and post-treatment using thermal annealing on the membrane surface were examined for produced water treatment. Therma annealing was subjected to membrane surface at 60 and 70 °C for 5, 10 and 15 second, respectively. Membrane characterizations were done using membrane flux and rejection with produced water as a feed, Scanning Electron Microscopy (SEM) and Fourier Transform Infra Red (FTIR) analysis. Experimental results showed that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion technique. The results from the Scanning Electron Microscopy (FESEM) analysis was also confirmed that polyethylene glycol as additivie in dope solution and thermal annealing was affected the morphology and membrane performance for produced water treatment, respectively. Scanning electron microscopy micrographs showed that the selective layer and the substructure of membrane became denser and more compact after the thermal annealing processes. Therefore, membrane rejection was significantly increased while the flux was slighty decreased, respectively. The best membrane performance is obtained on the composition of 18 wt % cellulose acetate, poly ethylene glycol 5 wt% with thermal annealing at 70° C for 15 second.

Surface modification of cellulose acetate membrane using thermal annealing to enhance produced water treatment

International Nuclear Information System (INIS)

Kusworo, T. D.; Aryanti, N.; Firdaus, M. M. H.; Sukmawati, H.

2015-01-01

This study is performed primarily to investigate the effect of surface modification of cellulose acetate using thermal annealing on the enhancement of membrane performance for produced water treatment. In this study, Cellulose Acetate membranes were casted using dry/wet phase inversion technique. The effect of additive and post-treatment using thermal annealing on the membrane surface were examined for produced water treatment. Therma annealing was subjected to membrane surface at 60 and 70 °C for 5, 10 and 15 second, respectively. Membrane characterizations were done using membrane flux and rejection with produced water as a feed, Scanning Electron Microscopy (SEM) and Fourier Transform Infra Red (FTIR) analysis. Experimental results showed that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion technique. The results from the Scanning Electron Microscopy (FESEM) analysis was also confirmed that polyethylene glycol as additivie in dope solution and thermal annealing was affected the morphology and membrane performance for produced water treatment, respectively. Scanning electron microscopy micrographs showed that the selective layer and the substructure of membrane became denser and more compact after the thermal annealing processes. Therefore, membrane rejection was significantly increased while the flux was slighty decreased, respectively. The best membrane performance is obtained on the composition of 18 wt % cellulose acetate, poly ethylene glycol 5 wt% with thermal annealing at 70° C for 15 second

Reverse degradation of nickel graphene junction by hydrogen annealing

Directory of Open Access Journals (Sweden)

Zhenjun Zhang

2016-02-01

Full Text Available Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 0C is an effective technique to reverse the degradation.

Rapid thermal annealing of FePt and FePt/Cu thin films

Energy Technology Data Exchange (ETDEWEB)

Brombacher, Christoph

2011-01-10

Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

Susceptor and proximity rapid thermal annealing of InP

International Nuclear Information System (INIS)

Katz, A.; Pearton, S.J.; Geva, M.

1990-01-01

This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

Thermal annealing of amorphous Ti-Si-O thin films

OpenAIRE

Hodroj , Abbas; Chaix-Pluchery , Odette; Audier , Marc; Gottlieb , Ulrich; Deschanvres , Jean-Luc

2008-01-01

International audience; Ti-Si-O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analysed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain X-ray amorphous after annealing whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well crystallized anatase TiO2. Crystallization of ana...

Processes in N-channel MOSFETs during postirradiation thermal annealing

International Nuclear Information System (INIS)

Pejovic, M.; Jaksic, A.; Ristic, G.; Baljosevic, B.

1997-01-01

The processes during postirradiation thermal annealing of γ-ray irradiated n-channel MOSFETs with both wet and dry gate oxides are investigated. For both analysed technologies, a so-called ''latent'' interface trap buildup is observed, followed at very late annealing times by the decrease in the interface-trap density. A model is proposed that successfully accounts for the experimental results. Implications of observed effects for total dose hardness assurance test methods implementation are discussed. (author)

Characterization for Ceramic-coated magnets using E-beam and thermal annealing methods

International Nuclear Information System (INIS)

Kim, Hyug Jong; Kim, Hee Gyu; Kang, In Gu; Kim, Min Wan; Yang, Ki Ho; Lee, Byung Cheol; Choi, Byung Ho

2009-01-01

Hard magnet was usually used by coating SiO 2 ceramic thick films followed by the thermal annealing process. In this work, the alternative annealing process for NdFeB magnets using e-beam sources(1∼2 MeV, 50∼400 kGy) was investigated. NdFeB magnets was coated with ceramic thick films using the spray method. The optimal annealing parameter for e-beam source reveals to be 1 MeV and 300 kGy. The sample prepared at 1 MeV and 300 kGy was characterized by the analysis of the surface morphology, film hardness, adhesion and chemical stability. The mechanical property of thick film, especially film hardness, is better than that of thermal annealed samples at 180 .deg. C. As a result, e-beam annealing process will be one of candidate and attractive heat treatment process. In future, manufacturing process will be carried out in cooperation with the magnet company

Thermal annealing and ionic abrasion in ZnTe

International Nuclear Information System (INIS)

Bensahel, D.

1975-01-01

Thermal annealing of the ZnTe crystal is studied first in order to obtain information on the aspect of the penetration profile. Ionic abrasion is then investigated to find out whether it produces the same effects as ionic implantation, especially for luminescence [fr

Far-infrared spectroscopy of thermally annealed tungsten silicide films

International Nuclear Information System (INIS)

Amiotti, M.; Borghesi, A.; Guizzetti, G.; Nava, F.; Santoro, G.

1991-01-01

The far-infrared transmittance spectrum of tungsten silicide has been observed for the first time. WSi 2 polycrystalline films were prepared by coevaporation and chemical-vapour deposition on silicon wafers, and subsequently thermally annealed at different temperatures. The observed structures are interpreted, on the basis of the symmetry properties of the crystal, such as infrared-active vibrational modes. Moreover, the marked lineshape dependence on annealing temperature enables this technique to analyse the formation of the solid silicide phases

Proposed rule package on fracture toughness and thermal annealing requirements and guidance for light water reactor vessels

International Nuclear Information System (INIS)

Allen Hiser, J.R.

1993-01-01

In the framework of updating and clarification of the fracture toughness and thermal annealing requirements and guidance for light water reactor pressure vessels, proposed revisions concerning the pressurized thermal shock rule, fracture toughness requirements and reactor vessel material surveillance program requirements, are described. A new rule concerning thermal annealing requirements and a draft regulatory guide on 'Format and Content of Application for Approval for Thermal Annealing of RPV' are also proposed

Proposed rule package on fracture toughness and thermal annealing requirements and guidance for light water reactor vessels

Energy Technology Data Exchange (ETDEWEB)

Allen Hiser, J R [UKAEA Harwell Lab. (United Kingdom). Engineering Div.

1994-12-31

In the framework of updating and clarification of the fracture toughness and thermal annealing requirements and guidance for light water reactor pressure vessels, proposed revisions concerning the pressurized thermal shock rule, fracture toughness requirements and reactor vessel material surveillance program requirements, are described. A new rule concerning thermal annealing requirements and a draft regulatory guide on `Format and Content of Application for Approval for Thermal Annealing of RPV` are also proposed.

Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

International Nuclear Information System (INIS)

Wu, K.-M.; Wang, Y.-H.; Chen, Wei-Chuan; Yang, S.-Y.; Shen, Kuei-Hung; Kao, M.-J.; Tsai, M.-J.; Kuo, C.-Y.; Wu, J.-C.; Horng, Lance

2007-01-01

Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co 60 Fe 20 B 20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 deg. C to 250 deg. C . Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 deg. C rapid annealing and still shows about 25% TMR even after 400 deg. C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature

An assessment of the economic consequences of thermal annealing of a nuclear reactor pressure vessel

International Nuclear Information System (INIS)

Griesbach, T.J.; Server, W.L.

1991-01-01

The use of a thermal heat treatment to recover mechanical properties which were degraded by neutron radiation exposure is a potential method for assuring reactor pressure vessel licensing life and possible license renewal. 'Wet anneals' at temperatures less than 343degC have been conducted on test reactors in Alaska (SM-1A) and Belgium (BR3). The Soviets have also performed 'dry anneals' at higher temperatures near or above 450degC on several commercial reactor vessels. Technical and economic uncertainties have made utilities in the United States reluctant to seriously consider thermal annealing of large commercial reactor vessels except as a last resort option. However, as a utility begins to experience significant radiation embrittlement or considers extending the operating license life of the vessel, thermal annealing can be a viable option depending upon many considerations. These considerations include other possible remedial measures that can be taken (i.e., flux reduction), economic issues with regard to utility finances, and corporate philosophy. A decision analysis model has been developed to analyze the thermal anneal option in comparison to other alternatives for a number of possible combinations and timing. The results for a postulated vessel and embrittlement condition are presented to show that thermal annealing can be a viable management option which should be taken seriously. (author)

Effect of thermal annealing on property changes of neutron-irradiated non-graphitized carbon materials and nuclear graphite

International Nuclear Information System (INIS)

Matsuo, Hideto

1991-06-01

Changes in dimension of non-graphitized carbon materials and nuclear graphite, and the bulk density, electrical resistivity, Young's modulus and thermal expansivity of nuclear graphite were studied after neutron irradiation at 1128-1483 K and the successive thermal annealing up to 2573 K. Carbon materials showed larger and anisotropic dimensional shrinkage than that of nuclear graphite after the irradiation. The irradiation-induced dimensional shrinkage of carbon materials decreased during annealing at temperatures from 1773 to 2023 K, followed by a slight increase at higher temperatures. On the other hand, the irradiated nuclear graphite hardly showed the changes in length, density and thermal expansivity under the thermal annealing, but the electrical resistivity and Young's modulus showed a gradual decrease with annealing temperature. It has been clarified that there exists significant difference in the effect of thermal annealing on irradiation-induced dimensional shrinkage between graphitized nuclear graphite and non-graphitized carbon materials. (author)

Optical characterisation of sputtered hydrogenated amorphous silicon thin films

International Nuclear Information System (INIS)

Mellassi, K.; Chafik El Idrissi, M.; Chouiyakh, A.; Rjeb, A.; Barhdadi, A.

2000-09-01

The present work is devoted to the study of some optical properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by radio-frequency cathodic sputtering technique. It is essentially focused on investigating separately the effects of increasing partial hydrogen pressure during the deposition stage, and the effects of post deposition thermal annealing on the main optical parameters of the deposited layers (refraction index, optical gap Urbach energy, etc.). We show that low hydrogen pressures allow a saturation of the dangling bonds in the material, while high pressures lead to the creation of new defects. We also show that thermal annealing under moderate temperatures allows a good improvement of the structural quality of deposited films. (author)

Light-induced defect creation in hydrogenated polymorphous silicon

International Nuclear Information System (INIS)

Morigaki, K.; Takeda, K.; Hikita, H.; Roca i Cabarrocas, P.

2005-01-01

Light-induced defect creation in hydrogenated polymorphous silicon (pm-Si:H) is investigated from electron spin resonance measurements and is compared with that in hydrogenated amorphous silicon (a-Si:H). Light-induced defect creation occurs at room temperature similarly for both types of films prepared at 250 deg. C. Thermal annealing of light-induced defects is also investigated as a function of temperature. Different behaviours of annealing characteristics for pm-Si:H from those for a-Si:H are observed and discussed. In particular, we observed a decrease of the light-induced defect creation efficiency with repeated light-soaking-annealing cycles and discuss it with respect to the hydrogen bonding in pm-Si:H films

Study of the bistable hydrogen donors properties in silicon implanted by the protons

International Nuclear Information System (INIS)

Abdullin, Kh.A.; Gorelkinskij, Yu.V.; Serikkanov, A.S.

2003-01-01

The proton implantation in silicon with doses 10 16 -10 17 cm -2 leads to formation of the hydrogen supersaturated solid solution in the Si. At the room temperature the hydrogen mobility on radiation defects limited by the H atom capture is inappreciably low. Thermal annealing at 400-500 Deg. C results in the decay and rebuilding of hydrogen-containing radiation defects and precipitants, that leads to reduction of the free energy of the system. Precipitation occurring in the form of nano-cluster defects formation, containing the hydrogen atoms. Thermal annealing of the silicon implanted by hydrogen at ∼450 Deg. C during 20 min. causing the hydrogen precipitation process and defects agglomeration leads to donor centers formation registering by the Hall effect

In-place thermal annealing of nuclear reactor pressure vessels

International Nuclear Information System (INIS)

Server, W.L.

1985-04-01

Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. The Amry SM-1A test reactor vessel was wet annealed in 1967 at less than 343 0 C (650 0 F), and wet annealing of the Belgian BR-3 reactor vessel at 343 0 C (650 0 F) has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place at temperatures as high as 454 0 C (850 0 F) is feasible, but solvable engineering problems do exist. Economic considerations have not been totally evaluated in assessing the cost-effectiveness of in-place annealing of commercial nuclear vessels. An American Society for Testing and Materials (ASTM) task group is upgrading and revising guide ASTM E 509-74 with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (e.g., the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

DEFF Research Database (Denmark)

Shayesteh, M.; O'Connell, D.; Gity, F.

2014-01-01

The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ide...

Synthesis of borides in molybdenum implanted by B+ ions under thermal and electron annealing

International Nuclear Information System (INIS)

Kazdaev, Kh.R.; Akchulakov, M.T.; Bayadilov, E.M.; Ehngel'ko, V.I.; Lazarenko, A.V.; Chebukov, E.S.

1989-01-01

The possibility of formation of borides in the near surface layers of monocrystalline molybdenum implanted by boron ions at 35 keV energy under thermal and pulsed electron annealing by an electon beam at 140 keV energy is investigated. It is found that implantation of boron ions into molybdenum with subsequent thermal annealing permits to produce both molybdenum monoboride (α-MoB) and boride (γ-Mo 2 B) with rather different formation mechanisms. Formation of the α-MoB phase occurs with the temperature elevation from the centers appeared during implantation, while the γ-Mo 2 B phase appears only on heating the implanted layers up to definite temperature as a result of the phase transformation of the solid solution into a chemical compound. Pulsed electron annealing instead of thermal annealing results mainly in formation of molybdenum boride (γ-Mo 2 B), the state of structure is determined by the degree of heating of implanted layers and their durable stay at temperatures exceeding the threshold values

Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods

Energy Technology Data Exchange (ETDEWEB)

Conroy, Michele; Li, Haoning; Zubialevich, Vitaly Z.; Kusch, Gunnar; Schmidt, Michael; Collins, Timothy; Glynn, Colm; Martin, Robert W.; O’Dwyer, Colm; Morris, Michael D.; Holmes, Justin D.; Parbrook, Peter J.

2016-12-07

With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure can be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.

Investigation of hydrogen bubbles behavior in tungsten by high-flux hydrogen implantation

Science.gov (United States)

Zhao, Jiangtao; Meng, Xuan; Guan, Xingcai; Wang, Qiang; Fang, Kaihong; Xu, Xiaohui; Lu, Yongkai; Gao, Jun; Liu, Zhenlin; Wang, Tieshan

2018-05-01

Hydrogen isotopes retention and bubbles formation are critical issues for tungsten as plasma-facing material in future fusion reactors. In this work, the formation and growing up behavior of hydrogen bubbles in tungsten were investigated experimentally. The planar TEM samples were implanted by 6.0keV hydrogens to a fluence of 3.38 ×1018 H ṡ cm-2 at room temperature, and well-defined hydrogen bubbles were observed by TEM. It was demonstrated that hydrogen bubbles formed when exposed to a fluence of 1.5 ×1018 H ṡ cm-2 , and the hydrogen bubbles grew up with the implantation fluence. In addition, the bubbles' size appeared larger with higher beam flux until saturated at a certain flux, even though the total fluence was kept the same. Finally, in order to understand the thermal annealing effect on the bubbles behavior, hydrogen-implanted samples were annealed at 400, 600, 800, and 1000 °C for 3 h. It was obvious that hydrogen bubbles' morphology changed at temperatures higher than 800 °C.

Synthesis carbon-encapsulated NiZn ferrite nanocomposites by in-situ starch coating route combined with hydrogen thermal reduction

Energy Technology Data Exchange (ETDEWEB)

Liu, Fuming [Department of Materials Chemistry, Nanchang Hangkong University, Nanchang 330063 (China); Xie, Yu, E-mail: xieyu_121@163.com [Department of Materials Chemistry, Nanchang Hangkong University, Nanchang 330063 (China); Key Laboratory of Photochemical Conversion and Optoelectronic Materials, TIPC, Chinese Academy of Sciences, Beijing 100190 (China); Duan, Junhong; Hua, Helin [Department of Materials Chemistry, Nanchang Hangkong University, Nanchang 330063 (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000 (China); Gao, Yunhua [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, TIPC, Chinese Academy of Sciences, Beijing 100190 (China); Huang, Yan; Pan, Jianfei; Ling, Yun [Department of Materials Chemistry, Nanchang Hangkong University, Nanchang 330063 (China)

2015-05-05

Carbon-encapsulated NiZn ferrite magnetic nanocomposites were successfully synthesized by an inexpensive and environment-friendly method of in-situ starch coating route combined with hydrogen thermal reduction. The nanocomposites were characterized in detail by X-ray diffraction (XRD), Fourier transform infrared spectrometry (FT-IR), thermogravimetric analysis (TGA), transmission electron microscopy (TEM) and vibrate sample magnetometer (VSM) and so on techniques. XRD, FT-IR, TGA and TEM images indicate the formation of carbon-encapsulated NiZn ferrite magnetic nanocomposites. XRD patterns reveal that the crystalline structure of the nanocomposites is cubic spinel and taenite emerges under the hydrogen thermal reductive ambient. FT-IR spectra suggest that there are interactions on the NiZn ferrite nanocomposites and a spinel-type structure corresponding to NiZn ferrite has formed. TGA shows that the weight loss of the nanocomposites can be divided into three stages in the course of heat decomposition. TEM observations reveal that the carbon-encapsulated NiZn ferrite magnetic nanocomposites have an intact core–shell structure. Under the magnetic field, the nanocomposites exhibited the ferrimagnetic behavior. The saturated magnetization (M{sub s}) of carbon-encapsulated NiZn ferrite nanocomposites calcined at 400 °C can reach a high value up to 72.67 emu/g, and the saturated magnetization (M{sub s}) decreases as the annealing temperature goes up, while the coercivity (Hc), magnetic residual (Mr) magnetic parameters practically fixed on 115.15 Oe and 7.85 emu/g. - Graphical abstract: Carbon-encapsulated NiZn ferrite magnetic nanocomposites were successfully synthesized by an inexpensive and environment-friendly method of in-situ starch coating route combined with hydrogen thermal reduction (Fig. 1). The nanocomposites were characterized and the experimental results were discussed. Under applied magnetic field, the nanocomposites exhibited the ferromagnetic behavior

Effects of Thermal Annealing Upon the Morphology of Polymer-Fullerene Blends

KAUST Repository

Verploegen, Eric

2010-08-18

Grazing incidence X-ray scattering (GIXS) is used to characterize the morphology of poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) thin film bulk heterojunction (BHJ) blends as a function of thermal annealing temperature, from room temperature to 220 °C. A custom-built heating chamber for in situ GIXS studies allows for the morphological characterization of thin films at elevated temperatures. Films annealed with a thermal gradient allow for the rapid investigation of the morphology over a range of temperatures that corroborate the results of the in situ experiments. Using these techniques the following are observed: the melting points of each component; an increase in the P3HT coherence length with annealing below the P3HT melting temperature; the formation of well-oriented P3HT crystallites with the (100) plane parallel to the substrate, when cooled from the melt; and the cold crystallization of PCBM associated with the PCBM glass transition temperature. The incorporation of these materials into BHJ blends affects the nature of these transitions as a function of blend ratio. These results provide a deeper understanding of the physics of how thermal annealing affects the morphology of polymer-fullerene BHJ blends and provides tools to manipulate the blend morphology in order to develop high-performance organic solar cell devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of Thermal Annealing Upon the Morphology of Polymer-Fullerene Blends

KAUST Repository

Verploegen, Eric; Mondal, Rajib; Bettinger, Christopher J.; Sok, Seihout; Toney, Michael F.; Bao, Zhenan

2010-01-01

Grazing incidence X-ray scattering (GIXS) is used to characterize the morphology of poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) thin film bulk heterojunction (BHJ) blends as a function of thermal annealing temperature, from room temperature to 220 °C. A custom-built heating chamber for in situ GIXS studies allows for the morphological characterization of thin films at elevated temperatures. Films annealed with a thermal gradient allow for the rapid investigation of the morphology over a range of temperatures that corroborate the results of the in situ experiments. Using these techniques the following are observed: the melting points of each component; an increase in the P3HT coherence length with annealing below the P3HT melting temperature; the formation of well-oriented P3HT crystallites with the (100) plane parallel to the substrate, when cooled from the melt; and the cold crystallization of PCBM associated with the PCBM glass transition temperature. The incorporation of these materials into BHJ blends affects the nature of these transitions as a function of blend ratio. These results provide a deeper understanding of the physics of how thermal annealing affects the morphology of polymer-fullerene BHJ blends and provides tools to manipulate the blend morphology in order to develop high-performance organic solar cell devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal annealing and pressure effects on BaFe2-xCoxAs2 single crystals.

Science.gov (United States)

Shin, Dongwon; Jung, Soon-Gil; Prathiba, G; Seo, Soonbeom; Choi, Ki-Young; Kim, Kee Hoon; Park, Tuson

2017-11-26

We investigate the pressure and thermal annealing effects on BaFe_2-xCo_xAs₂ (Co-Ba122) single crystals with x = 0.1 and 0.17 via electrical transport measurements. The thermal annealing treatment not only enhances the superconducting transition temperature (T_c) from 9.6 to 12.7 K for x = 0.1 and from 18.1 to 21.0 K for x = 0.17, but also increases the antiferromagnetic transition temperature (T_N). Simultaneous enhancement of T_c and T_N by the thermal annealing treatment indicates that thermal annealing could substantially improve the quality of the Co-doped Ba122 samples. Interestingly, T_c of the Co-Ba122 compounds shows a scaling behavior with a linear dependence on the resistivity value at 290 K, irrespective of tuning parameters, such as chemical doping, pressure, and thermal annealing. These results not only provide an effective way to access the intrinsic properties of the BaFe₂As₂ system, but also may shed a light on designing new materials with higher superconducting transition temperature. © 2017 IOP Publishing Ltd.

Effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles

International Nuclear Information System (INIS)

Tong Liuniu; Wang Yichao; He Xianmei; Han Huaibin; Xia Ailin; Hu Jinlian

2012-01-01

We explore the effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles synthesized by the sol-gel method. X-ray diffraction and x-ray photoelectron spectroscopy data show evidence that Cr has been incorporated into the wurtzite ZnO lattice as Cr 2+ ions substituting for Zn 2+ ions without any detectable secondary phase in as-synthesized Zn 0.97 Cr 0.03 O nanopowders. The room temperature magnetization measurements reveal a large enhancement of saturation magnetization M s as well as an increase of coercivity of H 2 -annealed Zn 0.97 Cr 0.03 O:H samples. It is found that the field-cooled magnetization curves as a function of temperature from 40 to 400 K can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. Photoluminescence measurements show evidence that the shallow donor defect or/and defect complexes such as hydrogen occupying an oxygen vacancy H o may play an important role in the origin of H 2 -annealing induced enhancement of ferromagnetism in Cr-H codoped ZnO nanoparticles. - Graphical Abstract: The H 2 -annealing induced enhancement of room temperature ferromagnetism in Cr-doped ZnO nanoparticles is observed. It is found that the field-cooled M-T curves can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. The PL data show evidence that the hydrogen related shallow donor defect or/and defect complexes may be responsible for it. Display Omitted Highlights: ► The H 2 -annealing induced a large enhancement of

Photo-response behavior of organic transistors based on thermally annealed semiconducting diketopyrrolopyrrole core

Science.gov (United States)

Tarsoly, Gergely; Pyo, Seungmoon

2018-06-01

We report the opto-electrical response of organic field-effect transistors based on a thin-film of a semiconducting diketopyrrolopyrrole (DPP) core, a popular building block for molecular semiconductors, and a polymeric gate dielectric. The thin-film of the DPP core was thermally annealed at different temperatures under N2 atmosphere to investigate the relationship between the annealing temperature and the electrical properties of the device. The results showed that the annealing process induces morphological changes in the thin film, and properly controlling the thermal annealing conditions can enhance the device performance. In addition, we also investigated in detail the photo-response behaviors by analyzing the responsivity (R) of the device with the optimally annealed DPP-core thin film under two light illumination conditions by considering the irradiance absorbed by the thin film instead of the total irradiance of the light source. We found that the proposed model could lead to a light-source-independent description of the photo-response behavior of the device, and which can be used for other applications.

Formation of metal-alloy nanoclusters in silica by ion implantation and annealing in selected atmosphere

International Nuclear Information System (INIS)

Battaglin, G.; Cattaruzza, E.; Gonella, F.; Mattei, G.; Mazzoldi, P.; Sada, C.; Zhang, X.

2000-01-01

The formation of binary alloy clusters in sequentially ion-implanted Au-Cu or Au-Ag silica glass has been studied as a function of the annealing atmosphere. Alloy formation has been evidenced in the as-implanted samples. The selective influence on Au precipitation of either oxygen or hydrogen annealing atmosphere governs the alloy cluster formation and the thermal stability

Thermal annealing response following irradiation of a CMOS imager for the JUICE JANUS instrument

Science.gov (United States)

Lofthouse-Smith, D.-D.; Soman, M. R.; Allanwood, E. A. H.; Stefanov, K. D.; Holland, A. D.; Leese, M.; Turne, P.

2018-03-01

ESA's JUICE (JUpiter ICy moon Explorer) spacecraft is an L-class mission destined for the Jovian system in 2030. Its primary goals are to investigate the conditions for planetary formation and the emergence of life, and how does the solar system work. The JANUS camera, an instrument on JUICE, uses a 4T back illuminated CMOS image sensor, the CIS115 designed by Teledyne e2v. JANUS imager test campaigns are studying the CIS115 following exposure to gammas, protons, electrons and heavy ions, simulating the harsh radiation environment present in the Jovian system. The degradation of 4T CMOS device performance following proton fluences is being studied, as well as the effectiveness of thermal annealing to reverse radiation damage. One key parameter for the JANUS mission is the Dark current of the CIS115, which has been shown to degrade in previous radiation campaigns. A thermal anneal of the CIS115 has been used to accelerate any annealing following the irradiation as well as to study the evolution of any performance characteristics. CIS115s have been irradiated to double the expected End of Life (EOL) levels for displacement damage radiation (2×1010 protons, 10 MeV equivalent). Following this, devices have undergone a thermal anneal cycle at 100oC for 168 hours to reveal the extent to which CIS115 recovers pre-irradiation performance. Dark current activation energy analysis following proton fluence gives information on trap species present in the device and how effective anneal is at removing these trap species. Thermal anneal shows no quantifiable change in the activation energy of the dark current following irradiation.

Review of in-service thermal annealing of nuclear reactor pressure vessels

International Nuclear Information System (INIS)

Server, W.L.

1984-01-01

Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper-shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. A test reactor pressure vessel has been wet annealed at less than 343 0 C (650 0 F), and annealing of the Belgian BR-3 reactor vessel has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place is feasible, but solvable engineering problems do exist. The materials with highest radiation sensitivity in the older reactor vessels are submerged-arc weld metals with high copper and nickel concentrations. The limited Charpy V-notch and fracture toughness data available for five such welds were reviewed. The review suggested that significant recovery results from annealing at 454 0 C (850 0 F) for one week. Two of the main concerns with a localized heat treatment at 454 0 C (850 0 F) are the degree of distortion that may occur after the annealing cycle and the extent of residual stresses. A thermal and structural analysis of a reactor vessel for distortions and residual stresses found no problems with the reactor vessel itself but did indicate a rotation at the nozzle region of the vessel that would plastically deform the attached primary piping. Further analytical studies are needed. An American Society for Testing and Materials (ASTM) task group is upgrading and revising the ASTM Recommended Guide for In-Service Annealing of WaterCooled Nuclear Reactor Vessels (E 509-74) with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (for example, the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

Novel thermal annealing methodology for permanent tuning polymer optical fiber Bragg gratings to longer wavelengths.

Science.gov (United States)

Pospori, A; Marques, C A F; Sagias, G; Lamela-Rivera, H; Webb, D J

2018-01-22

The Bragg wavelength of a polymer optical fiber Bragg grating can be permanently shifted by utilizing the thermal annealing method. In all the reported fiber annealing cases, the authors were able to tune the Bragg wavelength only to shorter wavelengths, since the polymer fiber shrinks in length during the annealing process. This article demonstrates a novel thermal annealing methodology for permanently tuning polymer optical fiber Bragg gratings to any desirable spectral position, including longer wavelengths. Stretching the polymer optical fiber during the annealing process, the period of Bragg grating, which is directly related with the Bragg wavelength, can become permanently longer. The methodology presented in this article can be used to multiplex polymer optical fiber Bragg gratings at any desirable spectral position utilizing only one phase-mask for their photo-inscription, reducing thus their fabrication cost in an industrial setting.

Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films

International Nuclear Information System (INIS)

Adam, Thomas; Loubet, Nicolas; Reznicek, Alexander; Paruchuri, Vamsi; Sampson, Ron; Sadana, Devendra

2012-01-01

The effect of thermal heat treatment on carbon in in-situ phosphorous-doped silicon-carbon is studied as a function of annealing temperature and type. Films of 0 to 2% carbon were deposited using cyclic chemical vapor deposition at reduced pressures. Secondary ion-mass spectroscopy and high-resolution X-ray diffraction were employed to extract the total and substitutional carbon concentration in samples with phosphorous levels of mid-10 20 cm -3 . It was found that millisecond laser annealing drastically improves substitutionality while high thermal budget treatments (furnace, rapid-thermal, or spike annealing) resulted in an almost complete loss of substitutional carbon, independent of preceding or subsequent laser heat treatments.

Enhanced regeneration of degraded polymer solar cells by thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pankaj, E-mail: pankaj@mail.nplindia.ernet.in [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); Bilen, Chhinder; Zhou, Xiaojing; Belcher, Warwick J.; Dastoor, Paul C., E-mail: Paul.Dastoor@newcastle.edu.au [Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); Feron, Krishna [Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); CSIRO Energy Technology, P. O. Box 330, Newcastle NSW 2300 (Australia)

2014-05-12

The degradation and thermal regeneration of poly(3-hexylethiophene) (P3HT):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) and P3HT:indene-C{sub 60} bisadduct (ICBA) polymer solar cells, with Ca/Al and Ca/Ag cathodes and indium tin oxide/poly(ethylene-dioxythiophene):polystyrene sulfonate anode have been investigated. Degradation occurs via a combination of three primary pathways: (1) cathodic oxidation, (2) active layer phase segregation, and (3) anodic diffusion. Fully degraded devices were subjected to thermal annealing under inert atmosphere. Degraded solar cells possessing Ca/Ag electrodes were observed to regenerate their performance, whereas solar cells having Ca/Al electrodes exhibited no significant regeneration of device characteristics after thermal annealing. Moreover, the solar cells with a P3HT:ICBA active layer exhibited enhanced regeneration compared to P3HT:PCBM active layer devices as a result of reduced changes to the active layer morphology. Devices combining a Ca/Ag cathode and P3HT:ICBA active layer demonstrated ∼50% performance restoration over several degradation/regeneration cycles.

Enhanced regeneration of degraded polymer solar cells by thermal annealing

International Nuclear Information System (INIS)

Kumar, Pankaj; Bilen, Chhinder; Zhou, Xiaojing; Belcher, Warwick J.; Dastoor, Paul C.; Feron, Krishna

2014-01-01

The degradation and thermal regeneration of poly(3-hexylethiophene) (P3HT):[6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and P3HT:indene-C 60 bisadduct (ICBA) polymer solar cells, with Ca/Al and Ca/Ag cathodes and indium tin oxide/poly(ethylene-dioxythiophene):polystyrene sulfonate anode have been investigated. Degradation occurs via a combination of three primary pathways: (1) cathodic oxidation, (2) active layer phase segregation, and (3) anodic diffusion. Fully degraded devices were subjected to thermal annealing under inert atmosphere. Degraded solar cells possessing Ca/Ag electrodes were observed to regenerate their performance, whereas solar cells having Ca/Al electrodes exhibited no significant regeneration of device characteristics after thermal annealing. Moreover, the solar cells with a P3HT:ICBA active layer exhibited enhanced regeneration compared to P3HT:PCBM active layer devices as a result of reduced changes to the active layer morphology. Devices combining a Ca/Ag cathode and P3HT:ICBA active layer demonstrated ∼50% performance restoration over several degradation/regeneration cycles

Thermal annealing of natural, radiation-damaged pyrochlore

Energy Technology Data Exchange (ETDEWEB)

Zietlow, Peter; Beirau, Tobias; Mihailova, Boriana; Groat, Lee A.; Chudy, Thomas; Shelyug, Anna; Navrotsky, Alexandra; Ewing, Rodney C.; Schlüter, Jochen; Škoda, Radek; Bismayer, Ulrich

2017-01-01

Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400–1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1·10

All-dry transferred single- and few-layer MoS2 field effect transistor with enhanced performance by thermal annealing

Science.gov (United States)

Islam, Arnob; Lee, Jaesung; Feng, Philip X.-L.

2018-01-01

We report on the experimental demonstration of all-dry stamp transferred single- and few-layer (1L to 3L) molybdenum disulfide (MoS2) field effect transistors (FETs), with a significant enhancement of device performance by employing thermal annealing in moderate vacuum. Three orders of magnitude reduction in both contact and channel resistances have been attained via thermal annealing. We obtain a low contact resistance of 22 kΩ μm after thermal annealing of 1L MoS2 FETs stamp-transferred onto gold (Au) contact electrodes. Furthermore, nearly two orders of magnitude enhancement of field effect mobility are also observed after thermal annealing. Finally, we employ Raman and photoluminescence measurements to reveal the phenomena of alloying or hybridization between 1L MoS2 and its contacting electrodes during annealing, which is responsible for attaining the low contact resistance.

Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

Science.gov (United States)

Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

2018-03-01

Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

Hydrogen diffusion at moderate temperatures in p-type Czochralski silicon

International Nuclear Information System (INIS)

Huang, Y.L.; Ma, Y.; Job, R.; Ulyashin, A.G.

2004-01-01

In plasma-hydrogenated p-type Czochralski silicon, rapid thermal donor (TD) formation is achieved, resulting from the catalytic support of hydrogen. The n-type counter doping by TD leads to a p-n junction formation. A simple method for the indirect determination of the diffusivity of hydrogen via applying the spreading resistance probe measurements is presented. Hydrogen diffusion in silicon during both plasma hydrogenation and post-hydrogenation annealing is investigated. The impact of the hydrogenation duration, annealing temperature, and resistivity of the silicon wafers on the hydrogen diffusion is discussed. Diffusivities of hydrogen are determined in the temperature range 270-450 deg. C. The activation energy for the hydrogen diffusion is deduced to be 1.23 eV. The diffusion of hydrogen is interpreted within the framework of a trap-limited diffusion mechanism. Oxygen and hydrogen are found to be the main traps

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

International Nuclear Information System (INIS)

Hanyu, Yuichiro; Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kamiya, Toshio; Kumomi, Hideya; Hosono, Hideo

2013-01-01

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H 2 O indicate that this threshold annealing temperature corresponds to depletion of H 2 O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested

Effect of thermal annealing on the properties of transparent conductive In–Ga–Zn oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Ling [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049, China and School of Information Science and Engineering, Shandong University, Jinan 250100 (China); Fan, Lina; Li, Yanhuai; Song, Zhongxiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Liu, Chunliang, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049 (China)

2014-03-15

Amorphous In–Ga–Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500 °C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400–800 nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors.

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

Science.gov (United States)

Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

2014-10-21

Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

Comparison between thermal annealing and ion mixing of alloyed Ni-W films on Si. I

International Nuclear Information System (INIS)

Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

1985-01-01

The reactions between Ni-W alloys and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by sputtering of Ni-W alloys, both Ni-rich and W-rich, onto the Si substrates, and followed by either furnace annealing (200--900 0 C) or ion mixing (2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). In general, thermal annealing and ion mixing lead to similar reactions. Phase separation between Ni and W with Ni silicides formed next to the Si substrate and W silicide formed on the surface was observed for both Ni-rich and W-rich samples under thermal annealing. Phase separation was also observed for Ni-rich samples under ion mixing; however, a Ni-W-Si ternary compound was possibly formed for ion-mixed W-rich samples. These reactions were rationalized in terms of the mobilities of various atoms and the energetics of the systems

Effects of thermal annealing on C/FePt granular multilayers: in situ and ex situ studies

International Nuclear Information System (INIS)

Babonneau, D; Abadias, G; Toudert, J; Girardeau, T; Fonda, E; Micha, J S; Petroff, F

2008-01-01

The comprehensive study of C/FePt granular multilayers prepared by ion-beam sputtering at room temperature and subsequent annealing is reported. The as-deposited multilayers consist of carbon-encapsulated FePt nanoparticles (average size ∼3 nm) with a disordered face-centered-cubic structure. The effects of thermal annealing on the structural and magnetic properties are investigated by using dedicated ex situ and in situ techniques, including high-resolution transmission electron microscopy, extended x-ray absorption fine structure, magnetometry, and coupled grazing incidence small-angle x-ray scattering and x-ray diffraction. Our structural data show that the particle size and interparticle distance increase slightly with annealing at temperatures below 790 K by thermally activated migration of Fe and Pt atoms. We find that thermal annealing at temperatures above 870 K results in the dramatic growth of the FePt nanoparticles by coalescence and their gradual L1 0 ordering. In addition, we observe a preferential graphitization of the carbon matrix, which provides protection against oxidation for the FePt nanoparticles. Magnetization measurements indicate that progressive magnetic hardening occurs after annealing. The dependences of the blocking temperature, saturation magnetization, coercivity, and magnetocrystalline anisotropy energy on the annealing temperature are discussed on the basis of the structural data

Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Shin, C.M.; Heo, J.H.; Leem, J.Y. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of)], E-mail: hhryu@inje.ac.kr; Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Shin, B.C.; Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-03-15

In this study, the effects of thermal annealing temperature and duration on ZnO nanorod arrays fabricated by hydrothermal method were investigated. The annealed ZnO/Si(1 1 1) substrate was used for ZnO nanorod array growth. The effects of annealing treatment on the structural and optical properties were investigated by scanning electron microscopy, X-ray diffraction, and room-temperature photoluminescence measurements. With the annealing temperature of 750 {sup o}C and the annealing duration of 10 min, both the structural and optical properties of the ZnO nanorod arrays improved significantly, as indicated in the X-ray diffraction and photoluminescence measurement.

Study of low energy hydrogen ion implantation effects in silicon: electric properties

International Nuclear Information System (INIS)

Barhdadi, A.

1985-07-01

Several analysis methods have been developed: hydrogen distribution analysis by nuclear reaction, crystal disorder evaluation by R.B.S., chemical impurities identification by SIMS, optical measurements, electrical characterization of surface barriers, deep level spectroscopy DLTS, ... All these analyses have been made after implantation then after thermal annealing. A model explaining the effect of implantation then after thermal annealing. A model explaining the effect of implanted hydrogen is proposed, the implantation creates an important quantity of defects in a thin layer near the surface; a chemical attack removes them. In Schottky devices, this layer has a basic role on carrier transport phenomena. Other results are given, some of them allow to give an account of the passivation by hydrogen implantation [fr

Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

Directory of Open Access Journals (Sweden)

Joong-Won Shin

2017-07-01

Full Text Available In this paper, we investigate a low thermal budget post-deposition-annealing (PDA process for amorphous In-Ga-ZnO (a-IGZO oxide semiconductor thin-film-transistors (TFTs. To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA and rapid thermal annealing (RTA methods were applied, and the results were compared with those of the conventional annealing (CTA method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C and short annealing time (2 min because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

Science.gov (United States)

Shin, Joong-Won; Cho, Won-Ju

2017-07-01

In this paper, we investigate a low thermal budget post-deposition-annealing (PDA) process for amorphous In-Ga-ZnO (a-IGZO) oxide semiconductor thin-film-transistors (TFTs). To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA) and rapid thermal annealing (RTA) methods were applied, and the results were compared with those of the conventional annealing (CTA) method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C) and short annealing time (2 min) because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

Development of a supplemental surveillance program for reactor pressure vessel thermal annealing

International Nuclear Information System (INIS)

Server, W.L.; Rosinski, S.T.

1997-01-01

The technical decision to thermally anneal a nuclear reactor pressure vessel (RPV) depends upon the level of embrittlement in the RPV steels, the amount of recovery of fracture toughness properties expected from the anneal, and the rate of re-embrittlement after the vessel is placed back into service. The recovery of Charpy impact toughness properties after annealing can be estimated initially by using a recovery model developed using experimental measurements of recovery (such as that developed by Eason et al. for U.S. vessel materials). However, actual validation measurements on plant-specific archived vessel materials (hopefully in the existing surveillance program) are needed; otherwise, irradiated surrogate materials, essentially the same as the RPV steels or bounding in expected behavior, must be utilized. The efficient use of any of these materials requires a supplemental surveillance program focused at both recovery and reirradiation embrittlement. Reconstituted Charpy specimens and new surveillance capsules will most likely be needed as part of this supplemental surveillance program. A new version of ASTM E 509 has recently been approved which provides guidance on thermal annealing in general and specifically for the development of an annealing supplemental surveillance program. The post-anneal re-embrittlement properties are crucial for continued plant operation, and the use of a re-embrittlement model, such as the lateral shift approach, may be overly conservative. This paper illustrates the new ASTM E 509 Standard Guide methodology for an annealing supplemental surveillance program. As an example, the proposed program for the Palisades RPV beltline steels is presented which covers the time from annealing to the end of operating license and beyond, if license renewal is pursued. The Palisades nuclear power plant RPV was planned to be annealed in 1998, but that plant is currently being re-evaluated. The proposed anneal was planned to be conducted at a

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Hanyu, Yuichiro, E-mail: y-hanyu@lucid.msl.titech.ac.jp; Domen, Kay [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Hiramatsu, Hidenori; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)

2013-11-11

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested.

On the structural and optical properties of sputtered hydrogenated amorphous silicon thin films

International Nuclear Information System (INIS)

Barhdadi, A.; Chafik El ldrissi, M.

2002-08-01

The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen partial pressure during film deposition, and the effect of post-deposition thermal annealings on the main optical characteristics of the layers such as refraction index, optical gap and Urbach energy. Using the grazing X-rays reflectometry technique, thin film structural properties are examined immediately after films deposition as well as after surface oxidation or annealing. We show that low hydrogen pressures allow a saturation of dangling bonds in the layers, while high doses lead to the creation of new defects. We show also that thermal annealing under moderate temperatures improves the structural quality of the deposited layers. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears for a long time stay in the ambient. (author)

Recent evaluation of 'wet' thermal annealing to resolve reactor pressure vessel embrittlement

International Nuclear Information System (INIS)

Server, W.L.; Biemiller, E.C.

1993-01-01

Prior to the decision to close the Yankee Rowe plant in 1992, a great deal of effort was expended in trying to resolve the degree of neutron embrittlement that the reactor pressure vessel had experienced after 30 years of operation. One mitigative measure that was examined in detail was the possibility of performing a relatively low temperature thermal anneal (at approximately 650 deg. F) to partially restore the original design level of mechanical properties of the reactor pressure vessel beltline region which were lost due to the neutron radiation exposure. This low temperature anneal was to involve heating of the primary coolant water using pump heat in a similar manner as that used to anneal the Belgian BR-3 reactor pressure vessel in the early 1980s. This 'wet' anneal was successful in recovering mechanical properties for the BR-3 vessel, but the extent of the recovery, as well as the rate of re-embrittlement after the anneal, were issues that were difficult to quantify since the exact reactor pressure vessel steels were not available for experimental verification. For the case of Yankee Rowe, material was available from past surveillance programs for at least one of the materials in the vessel, as well as materials obtained from various sources which could act as bounding surrogates. An irradiation /annealing/reirradiation program was developed to better quantify the degree of recovery and re-embrittlement for these materials, but this program was halted before significant test results were obtained. Prior to the initiation of the testing program, a review of past annealing data was performed and the data were scrutinized for direct relevance to the annealing response of the Yankee Rowe vessel. This paper discusses the results derived from this review. The results from the critical review of the past annealing data indicated that a 'wet' anneal of the Yankee Rowe vessel may have been successful in reducing the degree of embrittlement to the point that the

Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation

Science.gov (United States)

Song, Aeran; Park, Hyun-Woo; Chung, Kwun-Bum; Rim, You Seung; Son, Kyoung Seok; Lim, Jun Hyung; Chu, Hye Yong

2017-12-01

The electrical properties of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin films were investigated after thermal annealing and plasma treatment under different gas conditions. The electrical resistivity of a-IGZO thin films post-treated in a hydrogen ambient were lower than those without treatment and those annealed in air, regardless of the methods used for both thermal annealing and plasma treatment. The electrical properties can be explained by the quantity of hydrogen incorporated into the samples and the changes in the electronic structure in terms of the chemical bonding states, the distribution of the near-conduction-band unoccupied states, and the band alignment. As a result, the carrier concentrations of the hydrogen treated a-IGZO thin films increased, while the mobility decreased, due to the increase in the oxygen vacancies from the occurrence of unoccupied states in both shallow and deep levels.

Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing

Science.gov (United States)

Mahmood, K.; Asghar, M.; Amin, N.; Ali, Adnan

2015-03-01

We have investigated the mechanism of phase transformation from ZnS to hexagonal ZnO by high-temperature thermal annealing. The ZnS thin films were grown on Si (001) substrate by thermal evaporation system using ZnS powder as source material. The grown films were annealed at different temperatures and characterized by X-ray diffraction (XRD), photoluminescence (PL), four-point probe, scanning electron microscope (SEM) and energy dispersive X-ray diffraction (EDX). The results demonstrated that as-deposited ZnS film has mixed phases but high-temperature annealing leads to transition from ZnS to ZnO. The observed result can be explained as a two-step process: (1) high-energy O atoms replaced S atoms in lattice during annealing process, and (2) S atoms diffused into substrate and/or diffused out of the sample. The dissociation energy of ZnS calculated from the Arrhenius plot of 1000/T versus log (resistivity) was found to be 3.1 eV. PL spectra of as-grown sample exhibits a characteristic green emission at 2.4 eV of ZnS but annealed samples consist of band-to-band and defect emission of ZnO at 3.29 eV and 2.5 eV respectively. SEM and EDX measurements were additionally performed to strengthen the argument.

The annealing behavior of hydrogen implanted into Al-Si alloy

Energy Technology Data Exchange (ETDEWEB)

Ogura, Masahiko; Yamaji, Norisuke; Imai, Makoto; Itoh, Akio; Imanishi, Nobutsugu [Kyoto Univ. (Japan). Faculty of Engineering

1997-03-01

We have studied effects of not only defects but also an added elements on trap-sites of hydrogen in metals. For the purpose, we observed depth profiles and thermal behaviors of hydrogen implanted into Al-1.5at.%Si alloy samples in an implantation-temperature range of liquid nitrogen temperature (LNT) to 373K at different doses. The results were compared with those for pure aluminum samples. It was found that hydrogen is trapped as molecules in grain boundaries of Al/Si. (author)

Effect of Annealing on Microstructures and Hardening of Helium-Hydrogen-Implanted Sequentially Vanadium Alloys

Science.gov (United States)

Jiang, Shaoning; Wang, Zhiming

2018-03-01

The effect of post-irradiation annealing on the microstructures and mechanical properties of V-4Cr-4Ti alloys was studied. Helium-hydrogen-irradiated sequentially V-4Cr-4Ti alloys at room temperature (RT) were undergone post-irradiation annealing at 450 °C over periods of up to 30 h. These samples were carried out by high-resolution transmission electron microscopy (HRTEM) observation and nanoindentation test. With the holding time, large amounts of point defects produced during irradiation at RT accumulated into large dislocation loops and then dislocation nets which promoted the irradiation hardening. Meanwhile, bubbles appeared. As annealing time extended, these bubbles grew up and merged, and finally broke up. In the process, the size of bubbles increased and the number density decreased. Microstructural changes due to post-irradiation annealing corresponded to the change of hardening. Dislocations and bubbles are co-contributed to irradiation hardening. With the holding time up to 30 h, the recovery of hardening is not obvious. The phenomenon was discussed by dispersed barrier hardening model and Friedel-Kroupa-Hirsch relationship.

Magnetic structure of Fe-based amorphous and thermal annealed microwires

International Nuclear Information System (INIS)

Olivera, J.; Provencio, M.; Prida, V.M.; Hernando, B.; Santos, J.D.; Perez, M.J.; Gorria, P.; Sanchez, M.L.; Belzunce, F.J.

2005-01-01

The magnetic structure of amorphous and thermal annealed glass coated microwires is studied by thermomagnetic, DSC, and Bitter domain pattern techniques. The long-range dipolar interaction between parallel aligned microwires and the appearance of large Barkhausen jumps steps in the axially magnetized loops are discussed in terms of reversal magnetization process

Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

Science.gov (United States)

Johnson, E. S.; Compton, W. D.

1971-01-01

Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

International Nuclear Information System (INIS)

Mtangi, W.; Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M.; Nyamhere, C.

2012-01-01

We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zn i related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X Zn . The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×10 17 cm −3 at 200 °C to 4.37×10 18 cm -3 at 800 °C.

Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector

International Nuclear Information System (INIS)

Zhou Hai; Fang Guojia; Liu Nishuang; Zhao Xingzhong

2011-01-01

Highlights: → Schottky barrier ultraviolet photodetectors were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. When annealing temperature was up to 300 deg. C, the performance of the PDs was improved with the great decrease of response and recovery times. → For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature. → The ratio of detectivity (D254* to D546*) was calculated as high as 103 for all PDs annealed at 300 deg. C and above. - Abstract: ZnO nanorod arrays were fabricated on ZnO coated glass substrate by hydrothermal method. Schottky barrier ultraviolet photodetectors (PDs) were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. It is illustrated that Schottky contacts at the electrode/ZnO NRs interface were formed at the annealing temperature of 300 deg. C and above. When annealing temperature was up to 300 o C, the performance of the PDs was improved with the great decrease of response and recovery times. At the forward bias of 2 V, the Schottky contact PDs showed the biggest responsivity and the best detectivity at the annealing temperature of 300 deg. C. For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature and the ratio of detectivity (D 254 * to D 546 *) was calculated as high as 10 3 for all PDs annealed at 300 deg. C and above.

The effect of low temperature neutron irradiation and annealing on the thermal conductivity of advanced carbon-based materials

International Nuclear Information System (INIS)

Barabash, V.; Mazul, I.; Latypov, R.; Pokrovsky, A.; Wu, C.H.

2002-01-01

Several carbon-based materials (carbon fibre composites NB 31, NS 31 and UAM-92, doped graphite RGTi-91), were irradiated at about 90 deg. C in the damage dose range 0.0021-0.13 dpa. Significant reduction of the thermal conductivity of all materials was observed (e.g. at damage dose of ∼0.13 dpa the thermal conductivity degraded up to level of ∼2-3% of the initial values). However, saturation of this effect was observed starting at a dose of ∼0.06 dpa. The effect of annealing at 250 and 350 deg. C on the recovery of thermal conductivity of NB 31 and NS 31 was studied and it was shown this annealing can significantly improve thermal conductivity (∼2.5-3 times). The data on the degradation of the thermal conductivity after additional irradiation after annealing is also reported

Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

International Nuclear Information System (INIS)

Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

2015-01-01

Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 10 26 m −2 ) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min −1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h

Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

Science.gov (United States)

Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

2015-08-01

Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 1026 m-2) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min-1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

Energy Technology Data Exchange (ETDEWEB)

Shimada, Masashi, E-mail: Masashi.Shimada@inl.gov [Fusion Safety Program, Idaho National Laboratory, Idaho Falls, ID (United States); Hara, Masanori [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan); Otsuka, Teppei [Kyushu University, Interdisciplinary Graduate School of Engineering Science, Higashi-ku, Fukuoka (Japan); Oya, Yasuhisa [Radioscience Research Laboratory, Faculty of Science, Shizuoka University, Shizuoka (Japan); Hatano, Yuji [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan)

2015-08-15

Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 10{sup 26} m{sup −2}) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min{sup −1} up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

Characteristics of rapid-thermal-annealed LiCoO2 cathode film for an all-solid-state thin film microbattery

International Nuclear Information System (INIS)

Kim, Han-Ki; Yoon, Young Soo

2004-01-01

We report on the fabrication of a LiCoO 2 film for an all-solid-state thin film microbattery by using a rapid-thermal-annealing (RTA) process. The LiCoO 2 films were grown by rf magnetron sputtering using a synthesized LiCoO 2 target in a [O 2 /(Ar+O 2 )] ratio of 10%. Scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) analysis results showed that the surface layer on the as-deposited LiCoO 2 film was completely removed by rapid thermal annealing process in oxygen ambient for 20 min. In addition, the thin film microbattery fabricated with the annealed LiCoO 2 film shows fairly stable cyclability with a specific discharge capacity of 56.49 μAh/cm2 μm. These results show the possibility of the RTA LiCoO 2 film and rapid thermal annealing process being a promising cathode material and annealing process for thin film microbatteries, respectively

Annealing effect on thermal conductivity and microhardness of carbon nanotube containing Se80Te16Cu4 glassy composites

Science.gov (United States)

Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

2018-02-01

This study deals with the effect of thermal annealing on structural/microstructural, thermal and mechanical behavior of pristine Se80Te16Cu4 and carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composites. Pristine Se80Te16Cu4, 3 and 5 wt%CNTs-Se80Te16Cu4 glassy composites are annealed in the vicinity of glass transition temperature to onset crystallization temperature (340-380 K). X-ray diffraction (XRD) pattern revealed formation of polycrystalline phases of hexagonal CuSe and trigonal selenium. The indexed d-values in XRD patterns are in well conformity with the d-values obtained after the indexing of the ring pattern of selected area electron diffraction pattern of TEM images. The SEM investigation exhibited that the grain size of the CNTs containing Se80Te16Cu4 glassy composites increased with increasing annealing temperature and decreased at further higher annealing temperature. Thermal conductivity, microhardness exhibited a substantial increase with increasing annealing temperature of 340-360 K and slightly decreases for 380 K. The variation of thermal conductivity and microhardness can be explained by cross-linking formation and voids reduction.

Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

International Nuclear Information System (INIS)

Kang, Jiyeon; Lee, Su Jeong; Myoung, Jae-Min; Kim, Chul-Hong; Chae, Gee Sung; Jun, Myungchul; Hwang, Yong Kee; Lee, Woong

2012-01-01

In order to investigate the possible reason for the improved device performances of amorphous In–Ga–Zn-O (a-IGZO) thin film transistors after thermal annealing, changes in the elemental concentrations in the a-IGZO channel regions and related device performances due to thermal annealing were observed. It was found that thermal annealing introduces a substantial level of oxygen deficiencies in the channel layer accompanying significantly enhanced device performances. The improved device performances are attributed to the oxygen deficiency which is believed to be averaged over the entire structure to function as shallow donors increasing the carrier concentrations. Such a deduction was supported by the changes in the absorption spectra of the a-IGZO films with various thermal histories. (paper)

Infrared thermal annealing device

International Nuclear Information System (INIS)

Gladys, M.J.; Clarke, I.; O'Connor, D.J.

2003-01-01

A device for annealing samples within an ultrahigh vacuum (UHV) scanning tunneling microscopy system was designed, constructed, and tested. The device is based on illuminating the sample with infrared radiation from outside the UHV chamber with a tungsten projector bulb. The apparatus uses an elliptical mirror to focus the beam through a sapphire viewport for low absorption. Experiments were conducted on clean Pd(100) and annealing temperatures in excess of 1000 K were easily reached

Ion-beam mixing and thermal annealing of Al--Nb and Al--Ta thin films

International Nuclear Information System (INIS)

Rai, A.K.; Bhattacharya, R.S.; Mendiratta, M.G.; Subramanian, P.R.; Dimiduk, D.M.

1988-01-01

Ion-beam mixing and thermal annealing of thin, alternating layers of Al and Nb, as well as Al and Ta, were investigated by selected area diffraction and Rutherford backscattering. The individual layer thicknesses were adjusted to obtain the overall compositions as Al 3 Nb and Al 3 Ta. The films were ion mixed with 1 MeV Au + ions at a dose of 1 x 10 16 ions cm/sup -2/ . Uniform mixing and amorphization were achieved for both Al--Nb and Al--Ta systems. Equilibrium crystalline Al 3 Nb and Al 3 Ta phases were formed after annealing of ion mixed amorphous films at 400 0 C for 6 h. Unmixed films, however, remained unreacted at 400 0 C for 1 h. Partial reaction was observed in the unmixed film of Al--Nb at 400 0 C for 6 h. After annealing at 500 0 C for 1 h, a complete reaction and formation of Al 3 Nb and Al 3 Ta phases in the respective films were observed. The influence of thermodynamics on the phase formation by ion mixing and thermal annealing is discussed

Effect of thermal annealing on optical properties of implanted GaAs

NARCIS (Netherlands)

Kulik, M; Komarov, FF; Maczka, D

GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its

Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

International Nuclear Information System (INIS)

Watanabe, Ken; Ohsawa, Takeo; Ross, Emily M.; Adachi, Yutaka; Haneda, Hajime; Sakaguchi, Isao; Takahashi, Ryosuke; Bierwagen, Oliver; White, Mark E.; Tsai, Min-Ying; Speck, James S.; Ohashi, Naoki

2014-01-01

The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO 2 ) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO 2 . The H-concentration of the In-doped SnO 2 films increased to (1–2) × 10 19  cm −3 by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations

Structural, morphological and optical properties of thermal annealed TiO thin films

International Nuclear Information System (INIS)

Zribi, M.; Kanzari, M.; Rezig, B.

2008-01-01

Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 deg. C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO 2 phase for the annealing temperature above 400 deg. C

The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Graphite Target Case.

Directory of Open Access Journals (Sweden)

Lusitra Munisa

2003-04-01

Full Text Available A study of the annealing effect on optical properties and disorder of hydrogenated amorphous silicon carbon (a-SiC:H films was undertaken. The films were prepared by sputtering technique using graphite target and silicon wafer in argon and hydrogen gas mixture, and then characterized by uv-vis (ultra violet-visible spectroscopy before and after annealing. Index of refraction n and absorption coefficient α of films have been determined from measurements of transmittance. The optical gap show small variation with annealing temperature, increasing with increasing annealing temperature up to 500 °C. An increase of annealing temperature leads to reduced film density and the amorphous network disorder. The experimental results are discussed in terms of deposition condition and compared to other experimental results.

Thermal stress modification in regenerated fiber Bragg grating via manipulation of glass transition temperature based on CO₂-laser annealing.

Science.gov (United States)

Lai, Man-Hong; Lim, Kok-Sing; Gunawardena, Dinusha S; Yang, Hang-Zhou; Chong, Wu-Yi; Ahmad, Harith

2015-03-01

In this work, we have demonstrated thermal stress relaxation in regenerated fiber Bragg gratings (RFBGs) by using direct CO₂-laser annealing technique. After the isothermal annealing and slow cooling process, the Bragg wavelength of the RFBG has been red-shifted. This modification is reversible by re-annealing and rapid cooling. It is repeatable with different cooling process in the subsequent annealing treatments. This phenomenon can be attributed to the thermal stress modification in the fiber core by means of manipulation of glass transition temperature with different cooling rates. This finding in this investigation is important for accurate temperature measurement of RFBG in dynamic environment.

Optical absorption analysis on diamond crystals modified by H2+ implantation and subsequent annealing

International Nuclear Information System (INIS)

Ma, Z.Q.; Naramoto, Hiroshi; Aoki, Yasushi; Yamamoto, Shunya; Takeshita, Hidefumi; Goppelt-Langer, P.C.

1995-01-01

The optical absorption analysis on synthetic diamond irradiated by molecular hydrogen ions (H 2 + ) with 40 keV, 10 15 -10 17 H/cm 2 , at 100 K, showed that the absorption coefficient (α) of modified layer in UV-VIS range was increased with the implanted dose and decreased with thermal annealing. While its relative optical band gap (E r,opt ) was decreased with ion fluence and proportional to the annealing temperature. The possible microstructure of atomic coordination for as-implanted and subsequent annealing samples was discussed tentatively. In addition the optical inhomogeneity of the type Ib diamond has been revealed by absorption topograph at λ=430 nm. (author)

Recovery of the irradiated JFETs by thermal annealing

International Nuclear Information System (INIS)

Assaf, J.

2007-10-01

Study about the recovering of irradiated JFET transistors has been reported. The JFETs were damaged totally or partially by exposition to Gamma ray and neutrons. Electronics noise has used to evaluate the effect of radiation and the recovery. The study focused on the recovery by thermal annealing, where samples have been heated gradually until 140 centigrade degree (410 K). The recovery ratio given by this method was higher than that resulted from the relaxation method (time recovery) carried out in the room temperature (300 K), especially for Gamma irradiated samples.(author)

The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

International Nuclear Information System (INIS)

Abdul Fatah Awang Mat

1988-01-01

The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

International Nuclear Information System (INIS)

Frigeri, C.; Nasi, L.; Serenyi, M.; Khanh, N.Q.; Csik, A.; Szekrenyes, Zs.; Kamaras, K.

2012-01-01

Complete text of publication follows. Among the present available renewable energy sources, energy harvesting from sunlight by means of photovoltaic cells is the most attractive one. In order to win over the traditional energy resources both efficiency and cost effectiveness of photovoltaic conversion must be optimized as far as possible. Efficiency is basically improved by the use of multijunction cells containing semiconductors with different band-gap. In this respect, the III-V compounds guarantee the highest efficiency, up to 41.6 %, but they are quite expensive. The latter drawback also affects other compounds like CdTe and CuIn 1-x Ga x Se 2 (CIGS). Si based solar devices have lower efficiency but are much more cost effective. They can use either crystalline or amorphous Si thin layers or Si nanoparticles. As to the thin films, amorphous Si (a-Si) is preferred to crystalline Si as it has a wider band-gap (1.7 instead of 1.1 eV) thus harvesting a larger portion of solar energy. A tandem cell is formed by using a-SiGe which has a smaller band-gap tunable between 1.1 and 1.7 eV depending on the Ge content. The best value should be 1.4 eV since the material properties seem to degrade below this value whilst the photo-conductivity drops after light soaking if the band gap exceeds 1.4 eV. A key issue of amorphous Si, Ge and SiGe is the high density of defects in the band-gap mostly due to dangling bonds whose density is particularly high (even up to 5 x10 19 cm -3 ) since the lattice is significantly disordered with distorted bond angles and lengths. This increases the probability of rupture of the Si-Si (Ge-Ge) bonds, i.e., formation of dangling bonds. Owing to the fact that hydrogen with its single electron structure can close the dangling bonds, their density can be reduced even by 4 orders of magnitude by doping with hydrogen. However, H is unstable in the host lattice. In fact, several findings showed its evolution from the thin layer upon annealing and that

Study of crosslinking onset and hydrogen annealing of ultra-high molecular weight polyethylene irradiated with high-energy protons

Science.gov (United States)

Wilson, John Ford

1997-09-01

Ultra high molecular weight polyethylene (UHMW-PE) is used extensively in hip and knee endoprostheses. Radiation damage from the sterilization of these endoprostheses prior to surgical insertion results in polymer crosslinking and decreased oxidative stability. The motivation for this study was to determine if UHMW-PE could be crosslinked by low dose proton irradiation with minimal radiation damage and its subsequent deleterious effects. I found that low dose proton irradiation and post irradiation hydrogen annealing did crosslink UHMW-PE and limit post irradiation oxidation. Crosslinking onset was investigated for UHMW-PE irradiated with 2.6 and 30 MeV H+ ions at low doses from 5.7 × 1011-2.3 × 1014 ions/cm2. Crosslinking was determined from gel permeation chromatography (GPC) of 1,2,4 trichlorobenzene sol fractions and increased with dose. Fourier transform infrared spectroscopy (FTIR) showed irradiation resulted in increased free radicals confirmed from increased carbonyl groups. Radiation damage, especially at the highest doses observed, also showed up in carbon double bonds and increased methyl end groups. Hydrogen annealing after ion irradiation resulted in 40- 50% decrease in FTIR absorption associated with carbonyl. The hydrogen annealing prevented further oxidation after aging for 1024 hours at 80oC. Hydrogen annealing was successful in healing radiation damage through reacting with the free radicals generated during proton irradiation. Polyethylenes, polyesters, and polyamides are used in diverse applications by the medical profession in the treatment of orthopedic impairments and cardiovascular disease and for neural implants. These artificial implants are sterilized with gamma irradiation prior to surgery and the resulting radiation damage can lead to accelerated deterioration of the implant properties. The findings in this study will greatly impact the continued use of these materials through the elimination of many problems associated with radiation

Thermal annealing study on P3HT: PCBM based bulk heterojunction organic solar cells using impedance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Gollu, Sankara Rao, E-mail: sankar.gollu@gmail.com [Plastic Electronics and Energy Lab (PEEL), Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Sharma, Ramakant, E-mail: diptig@iitb.ac.in; G, Srinivas, E-mail: diptig@iitb.ac.in; Gupta, Dipti, E-mail: diptig@iitb.ac.in [Plastic Electronics and Energy Lab (PEEL) Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

2014-10-15

Recently, Thermal annealing is an important process for bulk heterojunction organic solar cells (BHJ OSCs) to improve the device efficiency and performance of the organic solar cells. Here in, we have examined the changes in the efficiency and morphology of P3HT: PCBM film according to the thermal annealing temperature to find the changes during the annealing process by measuring the optical absorption, atomic force microscope and X-ray diffraction. We also investigated the effect of different annealing process conditions (without, pre- and post-annealing) on the device performance of the inverted bulk heterojunction organic solar cells consist the structure of ITO/ ZnO / P3HT: PCBM / MoO{sub 3}/ Al by measuring AC impedance characteristics. Particularly, the power conversion efficiency (PCE), crystalline nature of the polymer, light absorption and the surface smoothness of P3HT: PCBM films are significantly improved after the annealing process. These results indicated the improvement in terms of PCE, interface smoothness between the P3HT: PCBM and MoO{sub 3} layers of the post annealed device originated from the decrease of series resistance between P3HT: PCBM layer and Al electrodes, which could be due to decrease in the effective life time of charge carriers.

Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

Energy Technology Data Exchange (ETDEWEB)

Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M. [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nyamhere, C. [Nelson Mandela Metropolitan University, Physics Department, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2012-05-15

We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8{+-}0.3) meV that has been suggested as Zn{sub i} related and possibly H-complex related and (54.5{+-}0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X{sub Zn}. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60 Multiplication-Sign 10{sup 17} cm{sup -3} at 200 Degree-Sign C to 4.37 Multiplication-Sign 10{sup 18} cm{sup -3} at 800 Degree-Sign C.

Activation of erbium films for hydrogen storage

International Nuclear Information System (INIS)

Brumbach, Michael T.; Ohlhausen, James A.; Zavadil, Kevin R.; Snow, Clark S.; Woicik, Joseph C.

2011-01-01

Hydriding of metals can be routinely performed at high temperature in a rich hydrogen atmosphere. Prior to the hydrogen loading process, a thermal activation procedure is required to promote facile hydrogen sorption into the metal. Despite the wide spread utilization of this activation procedure, little is known about the chemical and electronic changes that occur during activation and how this thermal pretreatment leads to increased rates of hydrogen uptake. This study utilized variable kinetic energy X-ray photoelectron spectroscopy to interrogate the changes during in situ thermal annealing of erbium films, with results confirmed by time-of-flight secondary ion mass spectrometry and low energy ion scattering. Activation can be identified by a large increase in photoemission between the valence band edge and the Fermi level and appears to occur over a two stage process. The first stage involves desorption of contaminants and recrystallization of the oxide, initially impeding hydrogen loading. Further heating overcomes the first stage and leads to degradation of the passive surface oxide leading to a bulk film more accessible for hydrogen loading.

Anisotropic visible photoluminescence from thermally annealed few-layer black phosphorus

Science.gov (United States)

Zhao, Chuan; Sekhar, M. Chandra; Lu, Wei; Zhang, Chenglong; Lai, Jiawei; Jia, Shuang; Sun, Dong

2018-06-01

Black phosphorus, a two-dimensional material, with high carrier mobility, tunable direct bandgap and anisotropic electronic properties has attracted enormous research interest towards potential application in electronic, optoelectronic and optomechanical devices. The bandgap of BP is thickness dependent, ranging from 0.3 eV for bulk to 1.3 eV for monolayer, while lacking in the visible region, a widely used optical regime for practical optoelectronic applications. In this work, photoluminescence (PL) centered at 605 nm is observed from the thermally annealed BP with thickness ≤20 nm. This higher energy PL is most likely the consequence of the formation of higher bandgap phosphorene oxides and suboxides on the surface BP layers as a result of the enhanced rate of oxidation. Moreover, the polarization-resolved PL measurements show that the emitted light is anisotropic when the excitation polarization is along the armchair direction. However, if excited along zigzag direction, the PL is nearly isotropic. Our findings suggest that the thermal annealing of BP can be used as a convenient route to fill the visible gap of the BP-based optoelectronic and optomechanical devices.

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP

International Nuclear Information System (INIS)

Martil, I.; Prado, A. del; San Andres, E.; Gonzalez Diaz, G.; Martinez, F.L.

2003-01-01

We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiN x :H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions (defined in this article as the nitrogen to silicon ratio, x=N/Si) were analyzed: from Si-rich (x=0.97) to N-rich (x=1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (x=1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiN x :H/semiconductor devices with Si, In 0.53 Ga 0.47 As, and InP. After RTA treatments, the electrical properties of the three different SiN x :H/semiconductor interfaces can be explained, noting the microstructural modifications that SiN x :H experiences upon annealing

Residual stress change by thermal annealing in amorphous Sm-Fe-B thin films

International Nuclear Information System (INIS)

Na, S.M.; Suh, S.J.; Kim, H.J.; Lim, S.H.

2002-01-01

The change in the residual stress and its effect on mechanical bending and magnetic properties of sputtered amorphous Sm-Fe-B thin films are investigated as a function of annealing temperature. Two stress components of intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film are used to explain the stress state in as-deposited thin films, and the annealing temperature dependence of residual stress, mechanical bending and magnetic properties

Enhancement of electron transfer from CdSe core/shell quantum dots to TiO2 films by thermal annealing

International Nuclear Information System (INIS)

Shao, Cong; Meng, Xiangdong; Jing, Pengtao; Sun, Mingye; Zhao, Jialong; Li, Haibo

2013-01-01

We demonstrated the enhancement of electron transfer from CdSe/ZnS core/shell quantum dots (QDs) to TiO 2 films via thermal annealing by means of steady-state and time-resolved photoluminescence (PL) spectroscopy. The significant decrease in PL intensities and lifetimes of the QDs on TiO 2 films was clearly observed after thermal annealing at temperature ranging from 100 °C to 300 °C. The obtained rates of electron transfer from CdSe core/shell QDs with red, yellow, and green emissions to TiO 2 films were significantly enhanced from several times to an order of magnitude (from ∼10 7 s −1 to ∼10 8 s −1 ). The improvement in efficiencies of electron transfer in the TiO 2 /CdSe QD systems was also confirmed. The enhancement could be considered to result from the thermal annealing reduced distance between CdSe QDs and TiO 2 films. The experimental results revealed that thermal annealing would play an important role on improving performances of QD based optoelectronic devices. -- Highlights: • Annealing-induced enhancement of electron transfer from CdSe to TiO 2 is reported. • CdSe QDs on TiO 2 and SiO 2 films are annealed at various temperatures. • Steady-state and time-resolved PL spectroscopy of CdSe QDs is studied. • The enhancement is related to the reduced distance between CdSe QDs and TiO 2

Ultraviolet-induced birefringence in hydrogen-loaded optical fiber

DEFF Research Database (Denmark)

Canning, John; Deyerl, Hans-Jürgen; Sørensen, Henrik Rokkjær

2005-01-01

for the role of hydrogen and deuterium in the UV-induced process. Previous arguments for the origins are systematically ruled out by reviewing existing literature. We note that the birefringence is made up of at least two components with different thermal stabilities, one consistent simply with molecular...... hydrogen being present in the system. Overall the birefringence, by deduction, is associated with anisotropy in hydrogen reactions within the fiber. As a result they lead, through known mechanisms of dilation in glass, to anisotropic stress relaxation that can be annealed out, with or without hydrogen...

Effect of thermal annealing of lead oxide film

International Nuclear Information System (INIS)

Hwang, Oh Hyeon; Kim, Sang Su; Suh, Jong Hee; Cho, Shin Hang; Kim, Ki Hyun; Hong, Jin Ki; Kim, Sun Ung

2011-01-01

Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 A/s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5x10 12 Ω cm is measured, and is comparable with the best data of PbO.

Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

Energy Technology Data Exchange (ETDEWEB)

Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); International Center for Young Scientists (ICYS-MANA), NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Ohsawa, Takeo; Ross, Emily M., E-mail: emross@hmc.edu; Adachi, Yutaka; Haneda, Hajime [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sakaguchi, Isao; Takahashi, Ryosuke [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Paul-Drude-Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Materials Department, University of California, Santa Barbara, California 93106 (United States); White, Mark E.; Tsai, Min-Ying; Speck, James S., E-mail: speck@ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

2014-03-31

The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO{sub 2}) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO{sub 2}. The H-concentration of the In-doped SnO{sub 2} films increased to (1–2) × 10{sup 19} cm{sup −3} by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations.

Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

International Nuclear Information System (INIS)

Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Lu, Liu; Ren, Fan; Holzworth, M. R.; Jones, Kevin S.; Pearton, Stephen J.; Smith, David J.; Kim, Jihyun; Zhang, Ming-Lan

2015-01-01

The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing

Feasibility of and methodology for thermal annealing an embrittled reactor vessel. Volume 2. Detailed technical description of the work. Final report

International Nuclear Information System (INIS)

Mager, T.R.

1982-11-01

Program materials were three weldments fabricated from A533 Grade B class 1 plate material and Mn Mo Ni weld wire. Specimens fabricated from the three submerged arc weldments included Type A Charpy V-notch impact, small size tensile, and 1/2T compact tension specimens. After encapsulation, the specimens were irradiated at the UVAR to two fluence levels, 8 x 10 18 n/cm 2 and 1.5 x 10 19 n/cm 2 (E > 1 MeV). Specimens were subjected to sequences of irradiation and anneals and then tested. Metallurgial/mechanistic analyses were also performed. It was concluded that excellent recovery of all properties could be achieved by annealing at greater than or equal to 850 0 F (454 0 C) for 168 hours. Such an annealing resulted in ductile-brittle transition temperature shift recovery of 80 to 100%, and reirradiation after this annealing indicated that the ductile-brittle transition temperature shift appears to continue at the expected rate. Several drawbacks were identified for wet thermal annealing. A conceptual dry in-situ thermal annealing procedure was developed for thermal annealing embrittled reactor vessels

Evolution of structural and magnetic properties of sputtered nanocrystalline Co thin films with thermal annealing

International Nuclear Information System (INIS)

Kumar, Dileep; Gupta, Ajay

2007-01-01

Ultrafine grain films of cobalt prepared using ion-beam sputtering have been studied using X-ray diffraction (XRD), X-ray reflectivity (XRR), atomic force microscopy (AFM) and magneto-optical Kerr effect (MOKE) measurements. As-prepared films have very smooth surface owing to the ultrafine nature of the grains. Evolution of the structure and morphology of the film with thermal annealing has been studied and the same is correlated with the magnetic properties. Above an annealing temperature of 300 deg. C, the film gradually transforms from HCP to FCC phase that remains stable at room temperature. A significant contribution of the surface energy, due to small grain size, results in stabilisation of the FCC phase at room temperature. It is found that other processes like stress relaxation, grain texturing and growth also exhibit an enhanced rate above 300 deg. C, and may be associated with an enhanced mobility of the atoms above this temperature. Films possess a uniaxial anisotropy, which exhibits a non-monotonous behaviour with thermal annealing. The observed variation in the anisotropy and coercivity with annealing can be understood in terms of variations in the internal stresses, surface roughness, and grain structure

Positron annihilation studies on reactor irradiated and thermal annealed ferrocene

International Nuclear Information System (INIS)

Marques Netto, A.; Carvalho, R.S.; Magalhaes, W.F.; Sinisterra, R.D.

1996-01-01

Retention and thermal annealing following (n, γ) reaction in solid ferrocene, Fe(C 5 H 5 ) 2 , were studied by positron annihilation lifetime spectroscopy (PAL). Positronium (Ps) formation was observed in the non-irradiated compound with a probability or intensity (I 3 ) of 30%. Upon irradiation of the compound with thermal neutrons in a nuclear reactor, I 3 decreases with increasing irradiation time. Thermal treatment again increases I 3 values from 16% to 25%, revealing an important proportion of molecular reformation without variation of the ortho-positronium lifetime (τ 3 ). These results point out the major influence of the electronic structure as determining the Ps yields in the pure complex. In the irradiated and non irradiated complexes the results are satisfactorily explained on the basis of the spur model. (orig.)

Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

KAUST Repository

Vaughn, Justin T.; Koros, William J.; Johnson, J.R.; Karvan, Oguz

2012-01-01

A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

KAUST Repository

Vaughn, Justin T.

2012-05-01

A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

Effects of thermal annealing and reirradiation on toughness of reactor pressure vessel steels

International Nuclear Information System (INIS)

Nanstad, R.K.; Iskander, S.K.; Sokolov, M.A.

1996-01-01

One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response, or open-quotes recovery,close quotes of several irradiated RPV steels; it also includes recent results from both ORNL and the Russian Research Center-Kurchatov Institute (RRC-KI) on a cooperative program of irradiation, annealing and reirradiation of both U.S. and Russian RPV steels. The cooperative program was conducted under the auspices of Working Group 3, U.S./Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS). The materials investigated are an RPV plate and various submerged-arc welds, with tensile, Charpy impact toughness, and fracture toughness results variously determined. Experimental results are compared with applicable prediction guidelines, while observed differences in annealing responses and reirradiation rates are discussed

Effects of thermal annealing and reirradiation on toughness of reactor pressure vessel steels

International Nuclear Information System (INIS)

Nanstad, R.K.; Iskander, S.K.; Sokolov, M.A.

1997-01-01

One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response, or open-quotes recovery,close quotes of several irradiated RPV steels; it also includes recent results from both ORNL and the Russian Research Center-Kurchatov Institute (RRC-KI) on a cooperative program of irradiation, annealing and reirradiation of both U.S. and Russian RPV steels. The cooperative program was conducted under the auspices of Working Group 3, U.S./Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS). The materials investigated are an RPV plate and various submerged-arc welds, with tensile, Charpy impact toughness, and fracture toughness results variously determined. Experimental results are compared with applicable prediction guidelines, while observed differences in annealing responses and reirradiation rates are discussed

Thermal annealing behavior of niobium-implanted {alpha}-Al{sub 2}O{sub 3} under reducing environment

Energy Technology Data Exchange (ETDEWEB)

Jianer, Zeng; Naramoto, Hiroshi; Aoki, Yasushi; Yamamoto, Shunya; Mingle, Gan; Takeshita, Hidefumi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

Thermal annealing behavior is studied in {alpha}-Al{sub 2}O{sub 3} implanted with {sup 93}Nb{sup +} using RBS/channeling technique and optical absorption spectrometry. The samples with <0001> and <112-bar0> orientations are implanted with 300 keV and 400 keV {sup 93}Nb{sup +} ions. Thermal annealing under reducing environment (Ar+3%H{sub 2}) is employed in the temperature range from 600 to 1000degC to explore unusual materials phase. The annealing up to 1000degC for an hour does not show any essential change in RBS/channeling spectra in two kinds of samples but the significant decrease in the visible region is observed in optical absorption spectra. After annealing at 1000degC for 10 hours, the recovery of the lattice damage is detected by RBS/channeling analysis especially in (112-bar0) sample. In the optical absorption spectra, new absorption envelope appears in the ultraviolet region. The results are related to the formation of niobium metal fine particles, and the sharp distribution is realized especially in (0001) sample. (author)

Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition

Science.gov (United States)

Maia da Costa, M. E. H.; Baumvol, I. J. R.; Radke, C.; Jacobsohn, L. G.; Zamora, R. R. M.; Freire, F. L.

2004-11-01

Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200-600 °C. The structural and compositional modifications were followed by several analytical techniques: Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Nanoidentation measurements and lateral force microscopy experiments were carried out in order to provide the film hardness and the friction coefficient, respectively. The internal stress and contact angle were also measured. RBS, ERDA, and XPS results indicate that both fluorine and hydrogen losses occur for annealing temperatures higher than 300 °C. Raman spectroscopy shows a progressive graphitization upon annealing, while the surface became slightly more hydrophobic as revealed by the increase of the contact angle. Following the surface wettability reduction, a decrease of the friction coefficient was observed. These results highlight the influence of the capillary condensation on the nanoscale friction. The film hardness and the internal stress are constant up to 300 °C and decrease for higher annealing temperatures, showing a direct correlation with the atomic density of the films. Since the thickness variation is negligible, the mass loss upon thermal treatment results in amorphous structures with a lower degree of cross-linking, explaining the deterioration of the mechanical properties of the a-C:F films.

Dependence of TL-property changes of natural quartzes on aluminium contents accompanied by thermal annealing treatment

International Nuclear Information System (INIS)

Hashimoto, T.; Sakaue, S.; Aoki, H.; Ichino, M.

1994-01-01

The TL properties were investigated using both an IPDA (Intensified Photo-Diode Array) spectrometric system and a TLCI (Thermoluminescence Colour Image) method after thermal annealing treatment at several temperatures. An apparent colour change from original blue- (BTL) to red-TL(RTL) has unexpectedly occurred in a Z-cut slice of Madagascar quartz, after an annealing treatment around 1000 o C. From the TL-colour change studies of the Z-cut slice, it was confirmed that original BTL intensities are inversely proportional to the Al contents; the TLCI-patterns of the original or annealed Z-cut slice gave stripe patterns corresponding to Al impurity contents along the crystal growth direction particularly yielding an intense appearance of RTL on higher Al contents after the annealing treatment. This changeability of TL-colour towards RTL after thermal annealing treatment was found to be intimately correlated with the square of Al concentrations, although BTL clearly changed as linearly proportional to Al impurity contents. Finally, the cleavage of Al-O-Al bonds or some sites in the vicinity of Al-O-Al bonds were plausibly considered to play an important role for the formation of RTL colour centres in natural quartzes as a result of the operation of high temperature effects. (Author)

Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

International Nuclear Information System (INIS)

Kim, Jonggi; Lee, Kyumin; Kim, Yonjae; Na, Heedo; Ko, Dae-Hong; Sohn, Hyunchul; Lee, Sunghoon

2013-01-01

In this study, the effect of thermal annealing on both the physical properties and the resistive switching properties of ZrO 2 films deposited by atomic layer deposition (ALD) method were investigated for its potential application to non-volatile memory devices. The ZrO 2 films in the Pt/ZrO 2 /TiN structure exhibited unipolar and bipolar resistance switching behaviors depending on the nature of the bias applied to Pt top electrodes for the electro-forming process. For unipolar switching, the resistance of the high resistance state (HRS) was reduced with increasing annealing temperature, accompanied with the increase of metallic Zr in the annealed ZrO 2 films. In contrast, the HRS resistance in the bipolar switching was increased while the low resistance state (LRS) resistance was decreased with increasing annealing temperature, producing a greater change in resistance. SIMS and EDX showed that the thickness of interfacial TiO x N y layer between the ZrO 2 and the TiN bottom electrode was enlarged with annealing. The enlarged TiO x N y layer was expected to produce the reduction of LRS resistance with the increase of HRS resistance in the bipolar resistance switching. - Highlights: • Effect of thermal annealing on resistive switching of ZrO 2 was investigated. • Both unipolar and bipolar switching were shown in the Pt/ZrO 2 /TiN stack. • TiO x N y interface layer was enlarged with increasing annealing temperature. • TiO x N y interface plays an important role in resistive switching properties

Effect of rapid thermal annealing on InP1−xBix grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Wu, X Y; Wang, K; Pan, W W; Wang, P; Li, Y Y; Song, Y X; Gu, Y; Yue, L; Xu, H; Zhang, Z P; Cui, J; Gong, Q; Wang, S M

2015-01-01

The effect of post-growth rapid thermal annealing on structural and optical properties of InP 1−x Bi x thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions. (paper)

Effect of hydrogen on the microstructure of silicon carbide

International Nuclear Information System (INIS)

Fischman, G.S.

1985-01-01

The effect of hydrogenation on the microstructure of a pressureless sintered silicon carbide was studied. Samples which were annealed in a 40:60 mole % H 2 :Ar atmosphere at 1400 0 C for 50 hours were microstructurally compared with unannealed samples and samples that had been annealed in a similar manner but using an argon atmosphere. The results were also compared with microstructural results obtained from in situ studies using both hydrogen and argon atmospheres. These results were compared with a thermodynamic model which was constructed using a free energy minimization technique. The observed effects of hydrogenation were surface decarburization and amorphization throughout the silicon carbide material. Other observations include the thermally induced growth of microcrystalline silicon and accelerated amorphization around the silicon microcrystals in samples used in hydrogen in situ studies. An analysis of the microstructure of the reference material was also performed

Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Tang, Haochun; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hiramatsu, Hidenori [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ueda, Shigenori [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Ohashi, Naoki [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kamiya, Toshio, E-mail: tkamiya@msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2016-09-01

We investigated the effects of thermal annealing for high-density subgap states in amorphous In–Ga–Zn–O (a-IGZO) films by focusing on low-quality defective films deposited without O{sub 2} supply (LQ films). It was found that most of the subgap states were thermally unstable and decreased dramatically by annealing at ≤ 400 °C in O{sub 2}. These defects (but with different shapes) were further reduced by 600 °C annealing, whose subgap states appeared similar to that of a-IGZO films deposited at an optimum condition (high quality, HQ films) and annealed at 300 °C. However, electron Hall mobilities and field-effect mobilities of their thin-film transistors (TFTs) were low for the LQ films/TFTs even annealed at 600 °C compared to those for the HQ films/TFTs. It implies that not only the subgap states but also heavier structural disorder deteriorated the electron transport in the LQ films. The present results also suggest that although a-IGZO deposition without O{sub 2} supply is sometimes employed in particular for DC sputtering, supplying some O{sub 2} gas would be better to produce good TFTs at lower temperatures. - Highlights: • Effects of thermal annealing on subgap states in a-In–Ga–Zn–O films were studied. • Hard X-ray photoemission spectroscopy was employed. • Low-quality films require annealing at 600 °C to make an operating transistor. • This temperature is much higher than those for high-quality films (300–400 °C). • The high temperature is required because some subgap states are very stable.

Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Fernández-Delgado, N., E-mail: natalia.fernandezdelgado@alum.uca.es [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain); Herrera, M. [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain); Chisholm, M.F. [Scanning Transmission Electron Microscopy Group, Oak Ridge National Laboratory, TN (United States); Kamarudin, M.A. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400, UPM Serdang, Selangor (Malaysia); Zhuang, Q.D.; Hayne, M. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Molina, S.I. [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

2017-02-15

Highlights: • GaSb QDs are more elongated and Sb is less concentrated after the thermal annealing. • The density of misfit dislocations in GaSb QDs is reduced after the annealing. • Threading dislocations in GaSb/GaAs QDs are Sb-rich after the thermal annealing. • The gliding of a threading dislocation favors Sb diffusion in GaSb/GaAs QDs. - Abstract: In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS) Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere

International Nuclear Information System (INIS)

Lin, T.-C.; Chang, S.-C.; Chiu, C.-F.

2006-01-01

A layer of copper was sputtered onto an indium tin oxide (ITO) glass substrates to form an ITO/Cu film, using a direct current magnetron operated at room temperature and in argon gas. The ITO and ITO/Cu films were heated in vacuum, and in hydrogen gas, to study their dependence of electronic and optical properties on annealing temperature. The resistivity of the ITO film was reduced from 6.2 x 10 -4 to 2.7 x 10 -4 Ω cm, and the average optical transmittance was improved to above 90% by the annealing process. The ITO/Cu film showed a low value of resistivity of 2.8 x 10 -4 Ω cm and the transmittance was between 58 and 72%

Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing

Energy Technology Data Exchange (ETDEWEB)

Park, Hyun-Woo; Choi, Min-Jun; Jo, Yongcheol; Chung, Kwun-Bum, E-mail: kbchung@dongguk.edu

2014-12-01

Highlights: • We studied the low temperature process of InGaZnO oxide thin film transistor. • Hydorgen irradiation was used for low temperature process below 150 °C. • Using hydrogen irradiation, field effect mobility of IGZO TFT was enhanced to ∼5 cm{sup 2} /Vs. • We examined the origin of improvement of device performance via electronic structure. - Abstract: Device performance of radio frequency (RF) sputtered InGaZnO (IGZO) thin film transistors (TFTs) were improved using combination post-treatment with hydrogen irradiation and low temperature annealing at 150 °C. Under the combination treatment, IGZO TFTs were significantly enhanced without changing physical structure and chemical composition. On the other hand, the electronic structure represents a dramatically modification of the chemical bonding states, band edge states below the conduction band, and band alignment. Compared to the hydrogen irradiation or low temperature annealing, the combination treatment induces the increase of oxygen deficient chemical bonding states, the shallow band edge state below the conduction band, and the smaller energy difference of conduction band offset, which can generate the increase in charge carrier and enhance the device performance.

Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

International Nuclear Information System (INIS)

Prado, A. del; San Andres, E.; Martil, I.; Gonzalez-Diaz, G.; Bravo, D.; Lopez, F.J.; Fernandez, M.; Martinez, F.L.

2003-01-01

The effect of rapid thermal annealing (RTA) processes on the structural properties of SiO x N y H z films was investigated. The samples were deposited by the electron cyclotron resonance plasma method, using SiH 4 , O 2 and N 2 as precursor gases. For SiO x N y H z films with composition close to that of SiO 2 , which have a very low H content, RTA induces thermal relaxation of the lattice and improvement of the structural order. For films of intermediate composition and of compositions close to SiN y H z , the main effect of RTA is the release of H at high temperatures (T>700 deg. C). This H release is more significant in films containing both Si-H and N-H bonds, due to cooperative reactions between both kinds of bonds. In these films the degradation of structural order associated to H release prevails over thermal relaxation, while in those films with only N-H bonds, thermal relaxation predominates. For annealing temperatures in the 500-700 deg. C range, the passivation of dangling bonds by the nonbonded H in the films and the transition from the paramagnetic state to the diamagnetic state of the K center result in a decrease of the density of paramagnetic defects. The H release observed at high annealing temperatures is accompanied by an increase of density of paramagnetic defects

Thermal diffusion of hydrogen in zircaloy-2 containing hydrogen beyond terminal solid solubility

International Nuclear Information System (INIS)

Maki, Hideo; Sato, Masao.

1975-01-01

The thermal diffusion of hydrogen is one of causes of uneven hydride precipitation in zircaloy fuel cladding tubes that are used in water reactors. In the diffusion model of hydrogen in zircaloy, the effects of the hydride on the diffusibility of hydrogen has been regarded as negligibly small in comparison with that of hydrogen dissolved in the matrix. Contrary to the indications given by this model, phenomena are often encountered that cannot be explained unless hydride platelets have considerable ostensible diffusibility in zircaloy. In order to determine quantitatively the diffusion characteristics of hydrogen in zircaloy, a thermal diffusion experiment was performed with zircaloy-2 fuel cladding tubes containing hydrogen beyond the terminal solid solubility. In this experiment, a temperature difference of 20 0 --30 0 C was applied between the inside and outside surfaces of the specimen in a thermal simulator. To explain the experimental results, a modified diffusion model is presented, in which the effects of stress are introduced into Markowitz's model with the diffusion of hydrogen in the hydride taken into account. The diffusion equation derived from this model can be written in a form that ostensibly represents direct diffusion of hydride in zircaloy. The apparent diffusion characteristics of the hydride at around 300 0 C are Dsub(p)=2.3x10 5 exp(-32,000/RT), (where R:gas constant, T:temperature) and the apparent heat of transport Qsub(p) =-60,000 cal/mol. The modified diffusion model well explains the experimental results in such respects as reaches a steady state after several hours. (auth.)

Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells

Science.gov (United States)

2013-01-01

Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the solar cells with and without thermal treatment are characterized by photoluminescence technique. Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy. PMID:23281811

Implantation temperature and thermal annealing behavior in H{sub 2}{sup +}-implanted 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Li, B.S., E-mail: b.s.li@impcas.ac.cn; Wang, Z.G.; Jin, J.F.

2013-12-01

The effects of hydrogen implantation temperature and annealing temperature in 6H-SiC are studied by the combination of Rutherford backscattering in channeling geometry (RBS/C), high-resolution X-ray diffraction (HRXRD) and scanning electron microscopy (SEM). 6H-SiC wafers were implanted with 100 keV H{sub 2}{sup +} ions to a fluence of 2.5 × 10{sup 16} H{sub 2}{sup +} cm{sup −2} at room temperature (RT), 573 K and 773 K. Post-implantation, the samples were annealing under argon gas flow at different temperatures from 973 K to 1373 K for isochronal annealing (15 min). The relative Si disorder at the damage peak for the sample implanted at RT decreases gradually with increasing annealing temperature. However, the reverse annealing effect is found for the samples implanted at 573 K and 773 K. As-implantation, the intensity of in-plane compressive stress is the maximum as the sample was implanted at RT, and is the minimum as the sample was implanted at 573 K. The intensity of in-plane compressive stress for the sample implanted at RT decreases gradually with increasing annealing temperature, while the intensities of in-plane compressive stress for the sample implanted at 573 K and 773 K show oscillatory changes with increasing annealing temperature. After annealing at 1373 K, blisters and craters occur on the sample surface and their average sizes increase with increasing implantation temperature.

Effect of thermal annealing on the structural and optical properties of tris-(8-hydroxyquinoline)aluminum(III) (Alq3 ) films.

Science.gov (United States)

Cuba, M; Muralidharan, G

2015-05-01

Tris-(8-hydroxyquionoline)aluminum (Alq3 ) was synthesized and coated on to a glass substrate using the dip coating method. The structural and optical properties of the Alq3 film after thermal annealing from 50°C to 300°C in 50° steps was studied. The films have been prepared with 2 to 16 layers (42-324 nm). The thickness and thermal annealing of Alq3 films were optimized for maximum luminescence yield. The Fourier transform infrared spectrum confirms the formation of quinoline with absorption in the region 700 - 500/cm. Partial sublimation and decomposition of quinoline ion was observed with the Alq3 films annealed at 300°C. The X-ray diffraction pattern of the Alq3 film annealed at 50°C to 150°C reveals the amorphous nature of the films. The Alq3 film annealed above 150°C were crystalline nature. Film annealed at 150°C exhibits a photoluminescence intensity maximum at 512 nm when excited at 390 nm. The Alq3 thin film deposited with 10 layers (220 nm) at 150°C exhibited maximum luminescence yield. Copyright © 2014 John Wiley & Sons, Ltd.

Improved behavior of cooper-amine complexes during thermal annealing for conductive thin film synthesis

Energy Technology Data Exchange (ETDEWEB)

Ayag, Kevin Ray; Panama, Gustavo; Paul, Shrabani; Kim, Hong Doo [Dept. of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin (Korea, Republic of)

2017-02-15

Previous studies successfully produced conductive thin films from organo-metallic-compounds-based inks. Some inks like those made from copper salt and amines, however, tend to move during thermal annealing and, thus, affect the conductive pattern on the substrate. In this study, conductive inks were synthesized by forming complexes of copper with amines and/or blended amines. To build-up an organo-metallic framework and preserve the pattern throughout the annealing period, diamine was added to the complex in different proportions. The prepared inks were coated on glass substrate and were annealed on a hot plate at 170°C under the gaseous mixture of formic acid and alcohol for 5 min. The metallic film was observed to retain the original pattern of the ink during and after annealing. Adhesion on the substrate was also improved. Inks with blended amines produced films with lower resistivities. The lowest electrical resistivity recorded was 4.99 μΩ cm, three times that of bulk copper.

Sintering Characteristics of Multilayered Thermal Barrier Coatings Under Thermal Gradient and Isothermal High Temperature Annealing Conditions

Science.gov (United States)

Rai, Amarendra K.; Schmitt, Michael P.; Bhattacharya, Rabi; Zhu, Dongming; Wolfe, Douglas E.

2014-01-01

Pyrochlore oxides have most of the relevant attributes for use as next generation thermal barrier coatings such as phase stability, low sintering kinetics and low thermal conductivity. One of the issues with the pyrochlore oxides is their lower toughness and therefore higher erosion rate compared to the current state-of-the-art TBC material, yttria (6 to 8 wt%) stabilized zirconia (YSZ). In this work, sintering characteristics were investigated for novel multilayered coating consisted of alternating layers of pyrochlore oxide viz Gd2Zr2O7 and t' low k (rare earth oxide doped YSZ). Thermal gradient and isothermal high temperature (1316 C) annealing conditions were used to investigate sintering and cracking in these coatings. The results are then compared with that of relevant monolayered coatings and a baseline YSZ coating.

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

2016-08-31

Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

International Nuclear Information System (INIS)

Woscholski, R.; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

2016-01-01

Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C

Synthesis of stoichiometric Ca{sub 2}Fe{sub 2}O{sub 5} nanoparticles by high-energy ball milling and thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Amorim, B.F.; Morales, M.A.; Bohn, F.; Carriço, A.S. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Medeiros, S.N. de, E-mail: sndemedeiros@gmail.com [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Dantas, A.L. [Departamento de Física, Universidade do Estado do Rio Grande do Norte, 59610-210 Mossoró, RN (Brazil)

2016-05-01

We report the synthesis of Ca{sub 2}Fe{sub 2}O{sub 5} nanoparticles by high-energy ball milling and thermal annealing from α-Fe{sub 2}O{sub 3} and CaCO{sub 3}. Magnetization measurements, Mössbauer and X-ray spectra reveal that annealing at high temperatures leads to better quality samples. Our results indicate nanoparticles produced by 10 h high-energy ball milling and thermal annealing for 2 h at 1100 °C achieve improved stoichiometry and the full weak ferromagnetic signal of Ca{sub 2}Fe{sub 2}O{sub 5}. Samples annealed at lower temperatures show departure from stoichiometry, with a higher occupancy of Fe{sup 3+} in octahedral sites, and a reduced magnetization. Thermal relaxation for temperatures in the 700–1100 °C range is well represented by a Néel model, assuming a random orientation of the weak ferromagnetic moment of the Ca{sub 2}Fe{sub 2}O{sub 5} nanoparticles.

Improved luminescence intensity and stability of thermal annealed ZnO incorporated Alq3 composite films.

Science.gov (United States)

Cuba, M; Muralidharan, G

2015-11-01

The 30 wt% of ZnO (weight percentage of ZnO has been optimised) incorporated tris- (8-hydroxyquinoline)aluminum (Alq3) has been synthesised and coated on to glass substrates using dip coating method. The structural and optical properties of the Alq3/ZnO composite film after thermal annealing from 50 to 300 °C insteps 50° has been studied and reported. XRD pattern reveals the presence of crystalline ZnO in all the annealed films. The films annealed above 150 °C reveal the presence of crystalline Alq3 along with crystalline ZnO. The FTIR spectra confirm the presence of hydroxyquinoline and ZnO vibration in all the annealed composite films. The composite films annealed above 150 °C show a partial sublimation and degradation of hydroxyquinoline compounds. The ZnO incorporated composite films (Alq3/ZnO) exhibit two emission peaks, one corresponding to ZnO at 487 nm and another at 513 nm due to Alq3. The films annealed at 200 °C exhibit maximum photoluminescence (PL) intensity than pristine film at 513 nm when excited at 390 nm.

Hydrogenation of Penta-Graphene Leads to Unexpected Large Improvement in Thermal Conductivity.

Science.gov (United States)

Wu, Xufei; Varshney, Vikas; Lee, Jonghoon; Zhang, Teng; Wohlwend, Jennifer L; Roy, Ajit K; Luo, Tengfei

2016-06-08

Penta-graphene (PG) has been identified as a novel two-dimensional (2D) material with an intrinsic bandgap, which makes it especially promising for electronics applications. In this work, we use first-principles lattice dynamics and iterative solution of the phonon Boltzmann transport equation (BTE) to determine the thermal conductivity of PG and its more stable derivative, hydrogenated penta-graphene (HPG). As a comparison, we also studied the effect of hydrogenation on graphene thermal conductivity. In contrast to hydrogenation of graphene, which leads to a dramatic decrease in thermal conductivity, HPG shows a notable increase in thermal conductivity, which is much higher than that of PG. Considering the necessity of using the same thickness when comparing thermal conductivity values of different 2D materials, hydrogenation leads to a 63% reduction in thermal conductivity for graphene, while it results in a 76% increase for PG. The high thermal conductivity of HPG makes it more thermally conductive than most other semiconducting 2D materials, such as the transition metal chalcogenides. Our detailed analyses show that the primary reason for the counterintuitive hydrogenation-induced thermal conductivity enhancement is the weaker bond anharmonicity in HPG than PG. This leads to weaker phonon scattering after hydrogenation, despite the increase in the phonon scattering phase space. The high thermal conductivity of HPG may inspire intensive research around HPG and other derivatives of PG as potential materials for future nanoelectronic devices. The fundamental physics understood from this study may open up a new strategy to engineer thermal transport properties of other 2D materials by controlling bond anharmonicity via functionalization.

Release of hydrogen isotopes from carbon based fusion reactor materials

International Nuclear Information System (INIS)

Vainonen-Ahlgren, E.

2000-01-01

The purpose of this study is to understand the annealing behavior of hydrogen isotopes in carbon based materials. Also, the density of the material and structural changes after thermal treatment and ion irradiation are examined. The study of hydrogen diffusion in diamondlike carbon films revealed an activation energy of 2.0 eV, while the deuterium diffusion, due to better measuring sensitivity, is found to be concentration dependent with the effective diffusion coefficient becoming smaller with decreasing deuterium concentration. To explain the experimentally observed profiles, a model according to which atomic deuterium diffuses and deuterium in clusters is immobile is developed. The concentration of immobile D was assumed to be an analytical function of the total D concentration. To describe the annealing behavior of D incorporated in diamondlike carbon films during the deposition process, a model taking into account diffusion of free D and thermal detrapping and trapping of D was developed. The difference in the analysis explains the disagreement of activation energy (1.5 ± 0.2 eV) with the value of 2,9± 0.1 eV obtained for D implanted samples earlier. The same model was applied to describe the experimental profiles in Si doped diamondlike carbon films. Si affects the retention of D in diamondlike carbon films. The amount of D depends on Si content in the co-deposited but not implanted samples. Besides, Si incorporation into carbon coating decreases to some extent the graphitization of the films and leads to formation of a structure which is stable under thermal treatment and ion irradiation. Hydrogen migration in the hydrogen and methane co-deposited films was also studied. In samples produced in methane atmosphere and annealed at different temperatures, the hydrogen concentration level decreases in the bulk, with more pronounced release at the surface region. In the case of coatings deposited by a methane ion beam, the H level also decreases with increasing

Thermal design and analysis of the HTGR fuel element vertical carbonizing and annealing furnace

International Nuclear Information System (INIS)

Llewellyn, G.H.

1977-06-01

Computer analyses of the thermal design for the proposed HTGR fuel element vertical carbonizing and annealing furnace were performed to verify its capability and to determine the required power input and distribution. Although the furnace is designed for continuous operation, steady-state temperature distributions were obtained by assuming internal heat generation in the fuel elements to simulate their mass movement. The furnace thermal design, the analysis methods, and the results are discussed herein

Comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II

International Nuclear Information System (INIS)

Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

1985-01-01

The reactions between bilayered Ni/W films and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by electron-beam sequential deposition of Ni and W onto the Si substrates and following by either furnace annealing (approx. 200--900 0 C) or ion mixing (approx. 2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). Thermal annealing of both W/Ni/Si and Ni/W/Si samples led to the formation of Ni silicide next to the Si substrate and W silicide on the sample surface (layer reversal between Ni and W in the Ni/W/Si case). Ion mixing of W/Ni/Si samples led to the formation of Ni silicide with a thin layer of Ni-W-Si mixture located at the sample surface. For Ni/W/Si samples a ternary amorphous mixture of Ni-W-Si was obtained with ion mixing. These reactions were rationalized in terms of the mobilities of various atoms and the intermixings between layers

Influence of Thermal Annealing on the Microstructural Properties of Indium Tin Oxide Nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Kim, Sung Nam; Kim, Seung Bin [Pohang University of Science and Technology, Pohang (Korea, Republic of); Choi, Hyun Chul [Chonnam National University, Gwangju (Korea, Republic of)

2012-01-15

In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) → 2268, 2164 (due to In-OH stretching mode) → 1546 (due to overtones of Sn- O-Sn modes) → 1412 (due to overtones of Sn-O-Sn modes) cm{sup -1}.

Nonlocal laser annealing to improve thermal contacts between multi-layer graphene and metals

International Nuclear Information System (INIS)

Ermakov, Victor A; Alaferdov, Andrei V; Vaz, Alfredo R; Moshkalev, Stanislav A; Baranov, Alexander V

2013-01-01

The accuracy of thermal conductivity measurements by the micro-Raman technique for suspended multi-layer graphene flakes has been shown to depend critically on the quality of the thermal contacts between the flakes and the metal electrodes used as the heat sink. The quality of the contacts can be improved by nonlocal laser annealing at increased power. The improvement of the thermal contacts to initially rough metal electrodes is attributed to local melting of the metal surface under laser heating, and increased area of real metal–graphene contact. Improvement of the thermal contacts between multi-layer graphene and a silicon oxide surface was also observed, with more efficient heat transfer from graphene as compared with the graphene–metal case. (paper)

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

Science.gov (United States)

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-02

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

Science.gov (United States)

Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

2015-10-01

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

A perspective on thermal annealing of reactor pressure vessel materials from the viewpoint of experimental results

International Nuclear Information System (INIS)

Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

1996-01-01

It is believed that in the next decade or so, several nuclear reactor pressure vessels (RPVs) may exceed the reference temperature limits set by the pressurized thermal shock screening criteria. One of the options to mitigate the effects of irradiation on RPVs is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory to study the annealing response, or ''recovery'' of several irradiated RPV steels. The fracture toughness is one of the important properties used in the evaluation of the integrity of RPVs. Optimally, the fracture toughness is measured directly by fracture toughness specimens, such as compact tension or precracked Charpy specimens, but is often inferred from the results of Charpy V-notch impact specimens. The experimental results are compared to the predictions of models for embrittlement recovery which have been developed by Eason et al. Some of the issues in annealing that still need to be resolved are discussed

Availability of steam generator against thermal disturbance of hydrogen production system coupled to HTGR

International Nuclear Information System (INIS)

Shibata, Taiju; Nishihara, Tetsuo; Hada, Kazuhiko; Shiozawa, Shusaku

1996-01-01

One of the safety issues to couple a hydrogen production system to an HTGR is how the reactor coolability can be maintained against anticipated abnormal reduction of heat removal (thermal disturbance) of the hydrogen production system. Since such a thermal disturbance is thought to frequently occur, it is desired against the thermal disturbance to keep reactor coolability by means other than reactor scram. Also, it is thought that the development of a passive cooling system for such a thermal disturbance will be necessary from a public acceptance point of view in a future HTGR-hydrogen production system. We propose a SG as the passive cooling system which can keep the reactor coolability during a thermal disturbance of a hydrogen production system. This paper describes the proposed steam generator (SG) for the HTGR-hydrogen production system and a result of transient thermal-hydraulic analysis of the total system, showing availability of the SG against a thermal disturbance of the hydrogen production system in case of the HTTR-steam reforming hydrogen production system. (author)

Influence of thermal annealing on the memory effect in MIS structures containing crystalline Si nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Meier, Sebastian; Brueggemann, R. [Institut fuer Physik, Carl von Ossietzky Universitaet Oldenburg, 26111 Oldenburg (Germany); Kirilov, Kiril [Department of Solid State Physics and Microelectronics, Sofia Univ. (Bulgaria); Levi, Zelma; Manolov, E. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Nedev, N. [Instituto de Ingenieria Universidad Autonoma de Baja California, Benito Juarez Blvd., s/n, C.P. 21280, Mexicali, Baja California, Mexico (Mexico)

2007-07-01

Silicon nanocrystals embedded in a SiO{sub 2} matrix are fabricated by thermal annealing of Metal/SiO{sub 2}/SiO{sub x}/c-Si structures (x=1.15) at 1000 C in N{sub 2} atmosphere for 30 or 60 min. High frequency C-V measurements demonstrate that both types of sample can be charged negatively or positively by applying a positive or negative bias voltage to the gate. The clockwise hysteresis windows of 30 and 60 min annealed samples are about 7 and 5.5 V for the {+-}12 V scanning range (E{sub ox}={+-}2.4 MV/cm), respectively. Although the samples annealed for 60 min have a smaller hysteresis window, they have two important advantages compared to the 30 min annealed ones: a lower defect density at the c-Si wafer/SiO{sub 2} interface and a smaller value of the fixed oxide charge close to this interface.

Improved silicon surface passivation of APCVD Al2O3 by rapid thermal annealing

NARCIS (Netherlands)

Black, L.E.; Allen, T.; McIntosh, K.R.; Cuévas, A.

2016-01-01

Short-duration post-deposition thermal treatments at temperatures above those normally used for annealing activation have the potential to further improve the already excellent passivation of crystalline silicon (c-Si) achieved by Al2O3, but have so far received little attention. In this work we

Hydrogen Fueling Station Using Thermal Compression: a techno-economic analysis

Energy Technology Data Exchange (ETDEWEB)

Kriha, Kenneth [Gas Technology Inst., Des Plaines, IL (United States); Petitpas, Guillaume [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Melchionda, Michael [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Soto, Herie [Shell, Houston TX (United States); Feng, Zhili [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Wang, Yanli [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-08-11

The goal of this project was to demonstrate the technical and economic feasibility of using thermal compression to create the hydrogen pressure necessary to operate vehicle hydrogen fueling stations. The concept of utilizing the exergy within liquid hydrogen to build pressure rather than mechanical components such as compressors or cryogenic liquid pumps has several advantages. In theory, the compressor-less hydrogen station will have lower operating and maintenance costs because the compressors found in conventional stations require large amounts of electricity to run and are prone to mechanical breakdowns. The thermal compression station also utilizes some of the energy used to liquefy the hydrogen as work to build pressure, this is energy that in conventional stations is lost as heat to the environment.

Resistivity behavior in isothermal annealing of Pd-H(D) alloys around 50 K

International Nuclear Information System (INIS)

Yamakawa, Kohji; Maeta, Hiroshi

2004-01-01

The behavior of electrical resistivity during hydrogen (deuterium) ordering is investigated for Pd-H(D) alloys of various hydrogen concentrations around 50 K. The disordered hydrogen (deuterium) atoms are introduced by quenching from 100 K into liquid helium immediately before isothermal annealings. The disordered atoms order by migration of the atoms during the heating-up of the specimens. On the isothermal curves of the resistivity in the high temperature range, the resistivity increases at first and then adopts a constant value dependent on the annealing temperature. On the other hand, the resistivity increases and then decreases during isothermal annealing in the low temperature range, nevertheless the ordering is progressing. The annealing time, at which the resistivity maximum appears, and the resistivity value of the maximum increase with decreasing annealing temperature. Furthermore, the decreasing resistivity after the maximum saturates to a value dependent on each annealing temperature. Therefore, it becomes clear that an equilibrium amount of ordering depends on the temperature and the resistivity increases in the early stage of hydrogen (deuterium) ordering and decreases in the later stage. The resistivity maximum in the isothermal annealing curve is caused by the nucleation and growth of ordered domains of hydrogen (deuterium) atoms

Thermoanalytical investigation of the hydrogen absorption behaviour of Sm2Fe17-xGax at high hydrogen pressures

International Nuclear Information System (INIS)

Handstein, A.; Kubis, M.; Gebel, B.; Mueller, K.-H.; Schultz, L.; Gutfleisch, O.; Harris, I.R.; Birmingham Univ.

1998-01-01

The complete disproportionation of Sm 2 Fe 17-x Ga x during annealing in hydrogen is hindered due to an increased stability of the compounds with a higher Ga content (x ≥ 1). Therefore the HD process as the first step of HDDR (hydrogenation-disproportionation-desorption-recombination) has to be carried out at a high hydrogen pressure for x ≥ 1. The hydrogen absorption behaviour of Sm 2 Fe 17-x Ga x (x = 0, 0.5, 1 and 2) was investigated by means of hydrogen differential thermal analysis (HDTA) and high pressure differential scanning calorimetry (HPDSC) at hydrogen pressures up to 70 bar. A dependency of hydrogenation and disproportionation temperatures on hydrogen pressure and Ga content was found. The comparison with other substituents (M = Al and Si) instead of M = Ga showed an increased stability of Sm 2 Fe 17-x M x compounds against disproportionation by hydrogen in the sequence Al, Ga and Si. The Curie temperatures of the interstitially hydrogenated Th 2 Zn 17 -type materials increase with the hydrogen pressure. In order to produce coercive and thermally stable Sm 2 Fe 15 Ga 2 C y powder by means of the HDDR process, we recombined material disproportionated at different hydrogen pressures. Preliminary results of magnetic properties of this HDDR treated and gas-carburized Sm 2 Fe 15 Ga 2 C y are discussed. (orig.)

Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

International Nuclear Information System (INIS)

Liu, Bingbing; Qin, Fuwen; Wang, Dejun

2015-01-01

Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

Effect of thermal annealing treatment with titanium chelate on buffer layer in inverted polymer solar cells

Energy Technology Data Exchange (ETDEWEB)

Liu, Zhiyong [College of Science, Shenyang Agricultural University, Shenyang 110866 (China); Wang, Ning, E-mail: ning_wang@outlook.com [School of Electrical and Electronic and Engineering, Nanyang Technological University 639798 (Singapore); Fu, Yan, E-mail: 1060945062@qq.com [College of Science, Shenyang Agricultural University, Shenyang 110866 (China)

2016-12-15

Highlights: • The TIPD layer as electron extraction layer and instead of Ca or LiF. • Impact of the work function of TIPD layer by thermal annealing treatment. • Importance of TIPD layer as electron extraction layer for work function and potential barrier. - Abstract: The solution processable electron extraction layer (EEL) is crucial for polymer solar cells (PSCs). Here, we investigated titanium (diisopropoxide) bis(2,4-pentanedionate) (TIPD) as an EEL and fabricated inverted PSCs with a blend of poly(3-hexylthiophene) (P3HT) and indene-C60 bisadduct (ICBA) acting as the photoactive layer, with a structure of ITO/TIPD/P3HT:ICBA/MoO{sub 3}/Ag. After thermal annealing treatment at 150 °C for 15 min, the PSC performances increased from 3.85% to 6.84% and they achieve stable power conversion efficiency (PCE), with a similar PCE compared with TiO{sub 2} as an EEL by the vacuum evaporated method. Fourier transform infrared spectroscopy (FTIR) and ultraviolet photoelectron spectroscopy (UPS) confirmed that the TIPD decomposed and formed the Ti=O bond, and the energy level of the lowest unoccupied molecular orbital and the highest occupied molecular orbital increased. The space charge limited current (SCLC) measurements further confirmed the improvement in electron collection and the transport ability using TIPD as the EEL and thermal annealing.

The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4 H-SiC

Science.gov (United States)

Omotoso, E.; Auret, F. D.; Igumbor, E.; Tunhuma, S. M.; Danga, H. T.; Ngoepe, P. N. M.; Taleatu, B. A.; Meyer, W. E.

2018-05-01

The effects of isochronal annealing on the electrical, morphological and structural characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current-voltage ( I- V), capacitance-voltage ( C- V), deep-level transient spectroscopy, scanning electron microscope (SEM) and X-ray diffraction measurements were employed to study the thermal effect on the characteristics of the SBDs. Prior to thermal annealing of Schottky contacts, the I- V measurements results confirmed the good rectification behaviour with ideality factor of 1.06, Schottky barrier height of 1.20 eV and series resistance of 7 Ω. The rectification properties after annealing was maintained up to an annealing temperature of 500 °C, but deviated slightly above 500 °C. The uncompensated ionized donor concentration decreased with annealing temperature, which could be attributed to out-diffusion of the 4 H-SiC into the Au/Ni contacts and decrease in bonding due to formation of nickel silicides. We observed the presence of four deep-level defects with energies 0.09, 0.11, 0.16 and 0.65 eV below the conduction band before and after the isochronal annealing up to 600 °C. The conclusion drawn was that annealing did not affect the number of deep-level defects present in Au/Ni/4 H-SiC contacts. The variations in electrical properties of the devices were attributed to the phase transformations and interfacial reactions that occurred after isochronal annealing.

Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal

Energy Technology Data Exchange (ETDEWEB)

Byrne, C., E-mail: conor.byrne2@mail.dcu.ie [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); Brady, A.; Walsh, L.; McCoy, A.P.; Bogan, J. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); McGlynn, E. [School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 (Ireland); Rajani, K.V. [School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 (Ireland)

2016-01-29

A copper–aluminium (CuAl) alloy (90%:10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/SiO{sub 2}/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO{sub 2} interface. Electrical four point probe measurements indicate that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk. - Highlights: • CuAl alloy (90%:Al 10% wt) deposited and vacuum annealed • XPS and SIMS data show segregation of Al from the alloy bulk. • Chemical changes seen indicate the reduction of Cu oxide and growth of Al Oxide. • Electrical measurements indicate a chemical change at the metal/SiO{sub 2} interface. • All data consistent with Cu diffusion barrier layer formed.

Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

International Nuclear Information System (INIS)

Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

2015-01-01

The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

Rutile TiO{sub 2} active-channel thin-film transistor using rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Kim, Sung-Jin; Heo, Kwan-Jun; Yoo, Su-Chang; Choi, Seong-Gon [Chungbuk National University, Cheongju (Korea, Republic of); Chang, Seung-Wook [Samsung Display, Co., Ltd., Suwon (Korea, Republic of)

2014-10-15

TiO{sub 2} active-channel thin-film transistors (TFTs), in which the bottom-gate top-contact architecture was prepared with atomic layer deposition grown TiO{sub 2} as the semiconducting layer, were fabricated and then investigated based on key process parameters, such as the rapid thermal annealing (RTA) temperature. Structural analyses suggested that TiO{sub 2} films annealed at temperatures above 500 .deg. C changed from an amorphous to a rutile phase. The TFT with a TiO{sub 2} semiconductor annealed at 600 .deg. C exhibited strongly-saturated output characteristics, a much higher on/off current ratio of 4.3 x 10{sup 5}, and an electron mobility of 0.014 cm{sup 2}/Vs. Moreover, the potential for manipulating TiO{sub 2}-based TFTs with RTA methodology was demonstrated through the realization of a simple resistive-load inverter.

The effect of thermal annealing on pentacene thin film transistor with micro contact printing.

Science.gov (United States)

Shin, Hong-Sik; Yun, Ho-Jin; Baek, Kyu-Ha; Ham, Yong-Hyun; Park, Kun-Sik; Kim, Dong-Pyo; Lee, Ga-Won; Lee, Hi-Deok; Lee, Kijun; Do, Lee-Mi

2012-07-01

We used micro contact printing (micro-CP) to fabricate inverted coplanar pentacene thin film transistors (TFTs) with 1-microm channels. The patterning of micro-scale source/drain electrodes without etch process was successfully achieved using Polydimethylsiloxane (PDMS) elastomer stamp. We used the Ag nano particle ink as an electrode material, and the sheet resistance and surface roughness of the Ag electrodes were effectively reduced with the 2-step thermal annealing on a hotplate, which improved the mobility, the on-off ratio, and the subthreshold slope (SS) of the pentacene TFTs. In addition, the device annealing on a hotplate in a N2 atmosphere for 30 sec can enhance the off-current and the mobility properties of OTFTs without damaging the pentacene thin films and increase the adhesion between pentacene and dielectric layer (SiO2), which was investigated with the pentacene films phase change of the XRD spectrum after device annealing.

Thermal Annealing Reduces Geminate Recombination in TQ1:N2200 All-Polymer Solar Cells

KAUST Repository

Karuthedath, Safakath

2018-03-27

A combination of steady-state and time-resolved spectroscopic measurements is used to investigate the photophysics of the all-polymer bulk heterojunction system TQ1:N2200. Upon thermal annealing a doubling of the external quantum efficiency and an improved fill factor (FF) is observed, resulting in an increase in the power conversion efficiency. Carrier extraction is similar for both blends, as demonstrated by time-resolved electric-field-induced second harmonic generation experiments in conjunction with transient photocurrent studies, spanning the ps-µs time range. Complementary transient absorption spectroscopy measurements reveal that the different quantum efficiencies originate from differences in charge carrier separation and recombination at the polymer-polymer interface: in as-spun samples ~35 % of the charges are bound in interfacial charge-transfer states and recombine geminately, while this pool is reduced to ~7 % in thermally-annealed sample, resulting in higher short-circuit currents. Time-delayed collection field experiments demonstrate a field-dependent charge generation process in as-spun samples, which reduces the FF. In contrast, field-dependence of charge generation is weak in annealed films. While both devices exhibit significant non-geminate recombination competing with charge extraction, causing low FFs, our results demonstrate that the donor/acceptor interface in all-polymer solar cells can be favourably altered to enhance charge separation, without compromising charge transport and extraction.

Rapid thermal annealing of Ti-rich TiNi thin films: A new approach to fabricate patterned shape memory thin films

International Nuclear Information System (INIS)

Motemani, Y.; Tan, M.J.; White, T.J.; Huang, W.M.

2011-01-01

This paper reports the rapid thermal annealing (RTA) of Ti-rich TiNi thin films, synthesized by the co-sputtering of TiNi and Ti targets. Long-range order of aperiodic alloy could be achieved in a few seconds with the optimum temperature of 773 K. Longer annealing (773 K/240 s), transformed the film to a poorly ordered vitreous phase, suggesting a novel method for solid state amorphization. Reitveld refinement analyses showed significant differences in structural parameters of the films crystallized by rapid and conventional thermal annealing. Dependence of the elastic modulus on the valence electron density (VED) of the crystallized films was studied. It is suggested that RTA provides a new approach to fabricate patterned shape memory thin films.

Understanding the microwave annealing of silicon

Directory of Open Access Journals (Sweden)

Chaochao Fu

2017-03-01

Full Text Available Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.

Hydrogenation of stainless steels implanted with nitrogen

International Nuclear Information System (INIS)

Silva Ramos, L.E. da.

1989-01-01

In the present work the effects of both ion implantation and hydrogenation on the fatigue behaviour of an AISI-304 type unstable stainless steel was studied. The material was tested under the following microstructural conditions: annealed; annealed plus hydrogenated; annealed plus ion-implanted; annealed, ion-implanted and hydrogeneted. The hydrogen induced phase transformations were also studied during the outgassing of the samples. The ion implanted was observed to retard the kinetics of the hydrogen induced phase transformations. It was also observed that the nitrogen ion implantation followed by both natural (for about 4 months) and artificial (100 0 C for 6 hours) aging treatments was beneficial to the fatigue life of both non hydrogenated and severely hydrogenated samples. (author) [pt

Feasibility of and methodology for thermal annealing an embrittled reactor vessel. Volume 1. Program overview. Final report

International Nuclear Information System (INIS)

Mager, T.R.

1983-01-01

An EPRI sponsored program was carried out by Westinghouse to determine the extent of fracture toughness recovery as a function of annealing time and temperature for neutron embrittlement sensitive reactor vessel material and to develop an optimal thermal anneal procedure for field applications. Program materials were three weldments fabricated by Combustion Engineering, Inc., from the same heat of A533 Grade B Class 1 plate material and the same heat of MnMoNi weld wire. The only variables were the target copper level and the welding flux which was Linde Grade 80 and Linde 0091. Weldments of 0.22, 0.36, and 0.41 wt % copper were produced. It was concluded from this study that excellent recovery of all properties could be achieved by annealing at 850 0 F (454 0 C) and above for 168 hours. Such an annealing resulted in ductile-brittle transition temperature shift recovery of 80 to 100%, and reirradiation after this annealing indicated that the ductile-brittle transition temperature shift appears to continue at the rate which would have been expected had no anneal been performed. System limitations were identified for both wet and dry annealing methods

Thermal reorientation of hydrogenic Pr3+ centers

International Nuclear Information System (INIS)

Jones, G. D.

1996-01-01

Sets of five multi-hydrogenic centers of both CaF 2 :Pr 3+ and SrF 2 :Pr 3 + show bleaching under selective polarized-light irradiation. Two forms of bleaching behaviour are observed. In reversible polarized bleaching, irradiation creates re-oriented equivalent centers, which can be restored to the original orientation by switching the laser polarization by 90 deg. Indefinite sequences of bleaching and recovery can be established. In photoproduct bleaching, inequivalent centers are produced, which can be reverted by subsequently selectively exciting their absorption lines. Thermal recovery of the bleached centers on warming the crystals occurs abruptly over a 5 K range around 100 K and is noteworthy in occurring at essentially identical temperatures for H - , D - and T - centers. The simplest model for this thermal recovery is thermal activation of the mobile hydrogenic ions over a double well potential barrier. An alternative model proposed by Universitaet Regensburg requires the involvement of high frequency excitations in scattering processes for surmounting the barrier

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

Czech Academy of Sciences Publication Activity Database

Krivyakin, G.K.; Volodin, V.; Kochubei, S.A.; Kamaev, G.N.; Purkrt, Adam; Remeš, Zdeněk; Fajgar, Radek; Stuchlíková, The-Ha; Stuchlík, Jiří

2016-01-01

Roč. 50, č. 7 (2016), s. 935-940 ISSN 1063-7826 R&D Projects: GA MŠk LH12236 Institutional support: RVO:68378271 ; RVO:67985858 Keywords : hydrogenated amorphous silicon * nanocrystals * laser annealing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.602, year: 2016

Thermally Annealed Iron (Oxide) Thin Film on an Alumina Barrier Layer, by XPS

Energy Technology Data Exchange (ETDEWEB)

Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-06

Herein we show characterization of an Fe thin film on Al_2O_3 after thermal annealing under H_2 using Al Ka X-rays. The XPS survey spectrum, narrow Fe 2p scan, and valence band regions are presented. The survey spectrum shows aluminum signals due to exposure of the underlying Al_2O_3 film during Fe nanoparticle formation.

The preliminary results of the thermal annealing processes performed on the RPVs NPP V-1 in Jaslovske Bohunice

Energy Technology Data Exchange (ETDEWEB)

Kupca, L; Brezina, M; Beno, P [Vyskumny Ustav Jadrovych Elektrarni, Trnava (Slovakia)

1994-12-31

Samples of weld and base metal above and below the weld were taken from RPV material in the V-230 type NPP V-1 in Bohunice; hardness measurements were carried out across the weld on the external surface of the RPV under the thermal shielding, before and after annealing. Results are presented and the annealing procedure efficiency is discussed. (authors). 13 refs., 5 figs.

Study of annealing effects in Al–Sb bilayer thin films

Indian Academy of Sciences (India)

There are three methods to prepare compound semiconductor systems: bilayer annealing (Singh and Vijay 2004a), rapid thermal annealing (Singh and Vijay 2004b) and ion beam mixing (Dhar et al 2003). The annealing and ion beam mixing were found to show inferior mixing effects compared to rapid thermal annealing.

Dependence of hydrogen-induced lattice defects and hydrogen embrittlement of cold-drawn pearlitic steels on hydrogen trap state, temperature, strain rate and hydrogen content

International Nuclear Information System (INIS)

Doshida, Tomoki; Takai, Kenichi

2014-01-01

The effects of the hydrogen state, temperature, strain rate and hydrogen content on hydrogen embrittlement susceptibility and hydrogen-induced lattice defects were evaluated for cold-drawn pearlitic steel that absorbed hydrogen in two trapping states. Firstly, tensile tests were carried out under various conditions to evaluate hydrogen embrittlement susceptibility. The results showed that peak 2 hydrogen, desorbed at temperatures above 200 °C as determined by thermal desorption analysis (TDA), had no significant effect on hydrogen embrittlement susceptibility. In contrast, hydrogen embrittlement susceptibility increased in the presence of peak 1 hydrogen, desorbed from room temperature to 200 °C as determined by TDA, at temperatures higher than −30 °C, at lower strain rates and with higher hydrogen content. Next, the same effects on hydrogen-induced lattice defects were also evaluated by TDA using hydrogen as a probe. Peak 2 hydrogen showed no significant effect on either hydrogen-induced lattice defects or hydrogen embrittlement susceptibility. It was found that hydrogen-induced lattice defects formed under the conditions where hydrogen embrittlement susceptibility increased. This relationship indicates that hydrogen embrittlement susceptibility was higher under the conditions where the formation of hydrogen-induced lattice defects tended to be enhanced. Since hydrogen-induced lattice defects formed by the interaction between hydrogen and strain were annihilated by annealing at a temperature of 200 °C, they were presumably vacancies or vacancy clusters. One of the common atomic-level changes that occur in cold-drawn pearlitic steel showing higher hydrogen embrittlement susceptibility is the formation of vacancies and vacancy clusters

Hydrogen enhanced thermal fatigue of y-titanium aluminide

NARCIS (Netherlands)

Dunfee, William; Gao, Ming; Wei, Robert P.; Wei, W.

1995-01-01

A study of hydrogen enhanced thermal fatigue cracking was carried out for a gamma-based Ti-48Al-2Cr alloy by cycling between room temperature and 750 or 900 °C. The results showed that hydrogen can severely attack the gamma alloy, with resulting lifetimes as low as three cycles, while no failures

A novel method for biopolymer surface nanostructuring by platinum deposition and subsequent thermal annealing

Czech Academy of Sciences Publication Activity Database

Slepička, P.; Juřík, P.; Kolská, Z.; Malinský, Petr; Macková, Anna; Michaljaničová, I.; Švorčík, V.

2012-01-01

Roč. 7, č. 671 (2012), s. 1-6 ISSN 1931-7573 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : nanopattering * surface morphology * biopolymer * platinum sputtering * thermal annealing Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 2.524, year: 2012

Thermal annealing and recoil reactions of 128I atoms in thermal neutron activated iodate-nitrate mixed crystals

International Nuclear Information System (INIS)

Mishra, S.P.; Sharma, R.B.

1983-01-01

Recoil reaction of 128 I atoms in neutron irradiated mixed crystals (iodate-nitrate) have been studied by thermal annealing methods. The retention of 128 I (i.e. radioactivity of 128 I retained in the parent chemi cal form) decreases sharply in the beginning and then attains saturation value with the increase in concentration of nitrate. The annealing followed the usual characteristic pattern, viz., a steep rise in retention within the first few minutes and then a saturation value thereafter but these saturation values in case of mixed crystals are lower in comparison to those of pure iodate targets. The process obeys simple first order kinetics and the activation energy obtained are of lower order than those obtained in case of pure targets. The results are discussed in the light of present ideas and the role of nitrate ion and its radiolytic products have also been invoked. (author)

Electrical properties and annealing kinetics study of laser-annealed ion-implanted silicon

International Nuclear Information System (INIS)

Wang, K.L.; Liu, Y.S.; Kirkpatrick, C.G.; Possin, G.E.

1979-01-01

This paper describes measurements of electrical properties and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. The experimental results include: (1) a determination of threshold energy density required for melting using a transient optical reflectivity technique, (2) measurements of dopant distribution using Rutherford backscattering spectroscopy, (3) characterization of electrical properties by measuring reverse leakage current densities of laser-annealed and thermal-annealed mesa diodes, (4) determination of annealed junction depth using an electron-beam-induced-current technique, and (5) a deep-level-transient spectroscopic study of residual defects. In particular, by measuring these properties of a diode annealed at a condition near the threshold energy density for liquid phase epitaxial regrowth, we have found certain correlations among these various annealing behaviors and electrical properties of laser-annealed ion-implanted silicon diodes

Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs

Directory of Open Access Journals (Sweden)

Tian Yuan

2016-01-01

Full Text Available N-type InGaN/GaN multiple-quantum-wells (MQWs were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD. The crystal quality and optical properties of samples after rapid thermal annealing (RTA at different temperatures in a range from 400 to 800°C are investigated by X-ray diffraction (XRD and photoluminescence (PL spectrum. The experimental results show that the peaks of InGaN, InN and In can be observed in all samples. And the results are induced by the phase separation and In-clusters. The luminescence peak of the samples annealed showed a red shift. It is caused by strain stress relaxation during the RTA process. Furthermore, some defects can be eliminated and the best annealing temperature is from 500°C to 700°C.

Optical properties of thermally annealed CdZnSe/ZnSe quantum dots

International Nuclear Information System (INIS)

Margapoti, Emanuela

2010-01-01

To analyse the diffusion characteristics, photoluminescence (PL) spectroscopy has been carried out in extensive detail on single, as well as, ensembles of thermally annealed (TA) CdSe/ZnSe QDs. For a series of QD-ensembles, each annealed for t A = 30 s at temperatures from T A = 300-550 C, the change in the QD-composition has been calculated from the blue-shift of the exciton ground-state PL-emission, using a concentration function based on Fick's laws of diffusion. The diffusion length (L D ) and the activation energy (E A ) have been determined thereof. For the studied QDs, E A has been evaluated to be 2.2 eV. Additionally, TA results also in an enhancement of the PL-intensity and reduction of the full-width-at-half maximum (FWHM) of the spectra. This point towards an increased homogeneity of the QD-size and composition, and decrease in the concentration of defects around the QDs. For single CdSe/ZnSe QDs, TA has been varied from 100-240 C, in steps for 20 C, with t A kept fixed at 30 s. Finally, the evolution of the magneto-optic response with post-growth thermal annealing has been studied for both individual QDs and QD-ensembles. An external magnetic field, applied perpendicular to the plane of the QDs (Faraday configuration), results in Zeeman spin splitting of the ground exciton state. The emissions from the Zeeman-split states are left and right circularly polarized and from the degree of circular polarization (DCP), as well as, the spectral separation of the PL-peaks, the g-factor can be estimated. For CdSe/ZnSe QD-ensembles, the g-factor has been observed to change sign with TA. (orig.).

Optical properties of thermally annealed CdZnSe/ZnSe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Margapoti, Emanuela

2010-07-01

To analyse the diffusion characteristics, photoluminescence (PL) spectroscopy has been carried out in extensive detail on single, as well as, ensembles of thermally annealed (TA) CdSe/ZnSe QDs. For a series of QD-ensembles, each annealed for t{sub A} = 30 s at temperatures from T{sub A} = 300-550 C, the change in the QD-composition has been calculated from the blue-shift of the exciton ground-state PL-emission, using a concentration function based on Fick's laws of diffusion. The diffusion length (L{sub D}) and the activation energy (E{sub A}) have been determined thereof. For the studied QDs, E{sub A} has been evaluated to be 2.2 eV. Additionally, TA results also in an enhancement of the PL-intensity and reduction of the full-width-at-half maximum (FWHM) of the spectra. This point towards an increased homogeneity of the QD-size and composition, and decrease in the concentration of defects around the QDs. For single CdSe/ZnSe QDs, TA has been varied from 100-240 C, in steps for 20 C, with t{sub A} kept fixed at 30 s. Finally, the evolution of the magneto-optic response with post-growth thermal annealing has been studied for both individual QDs and QD-ensembles. An external magnetic field, applied perpendicular to the plane of the QDs (Faraday configuration), results in Zeeman spin splitting of the ground exciton state. The emissions from the Zeeman-split states are left and right circularly polarized and from the degree of circular polarization (DCP), as well as, the spectral separation of the PL-peaks, the g-factor can be estimated. For CdSe/ZnSe QD-ensembles, the g-factor has been observed to change sign with TA. (orig.).

Photoelectron emission yield experiments on evolution of sub-gap states in amorphous In-Ga-Zn-O thin films with post deposition hydrogen treatment

International Nuclear Information System (INIS)

Hayashi, Kazushi; Hino, Aya; Tao, Hiroaki; Ochi, Mototaka; Goto, Hiroshi; Kugimiya, Toshihiro

2015-01-01

Total photoyield emission spectroscopy (TPYS) was applied to study the evolution of sub-gap states in hydrogen-treated amorphous In-Ga-Zn-O (a-IGZO) thin films. The a-IGZO thin films were subjected to hydrogen radicals and subsequently annealed in ultra-high vacuum (UHV) conditions. A clear onset of the electron emission was observed at around 4.3 eV from the hydrogen-treated a-IGZO thin films. After successive UHV annealing at 300 °C, the onset in the TPYS spectra was shifted to 4.15 eV, and the photoelectron emission from the sub-gap states was decreased as the annealing temperature was increased. In conjunction with the results of thermal desorption spectrometer, it was deduced that the hydrogen atoms incorporated in the a-IGZO thin films induced metastable sub-gap states at around 4.3 eV from vacuum level just after the hydrogenation. It was also suggested that the defect configuration was changed due to the higher temperature UHV annealing, and that the hydrogen atoms desorbed with the involvement of Zn atoms. These experiments produced direct evidence to show the formation of sub-gap states as a result of hydrogen incorporation into the a-IGZO thin films

Photoelectron emission yield experiments on evolution of sub-gap states in amorphous In-Ga-Zn-O thin films with post deposition hydrogen treatment

Energy Technology Data Exchange (ETDEWEB)

Hayashi, Kazushi, E-mail: hayashi.kazushi@kobelco.com; Hino, Aya; Tao, Hiroaki; Ochi, Mototaka; Goto, Hiroshi; Kugimiya, Toshihiro [Electronics Research Laboratory, Kobe Steel, Ltd., 1-5-5 Takatsuka-dai, Nishi-ku, Kobe 651-2271 (Japan)

2015-09-14

Total photoyield emission spectroscopy (TPYS) was applied to study the evolution of sub-gap states in hydrogen-treated amorphous In-Ga-Zn-O (a-IGZO) thin films. The a-IGZO thin films were subjected to hydrogen radicals and subsequently annealed in ultra-high vacuum (UHV) conditions. A clear onset of the electron emission was observed at around 4.3 eV from the hydrogen-treated a-IGZO thin films. After successive UHV annealing at 300 °C, the onset in the TPYS spectra was shifted to 4.15 eV, and the photoelectron emission from the sub-gap states was decreased as the annealing temperature was increased. In conjunction with the results of thermal desorption spectrometer, it was deduced that the hydrogen atoms incorporated in the a-IGZO thin films induced metastable sub-gap states at around 4.3 eV from vacuum level just after the hydrogenation. It was also suggested that the defect configuration was changed due to the higher temperature UHV annealing, and that the hydrogen atoms desorbed with the involvement of Zn atoms. These experiments produced direct evidence to show the formation of sub-gap states as a result of hydrogen incorporation into the a-IGZO thin films.

Investigation of SiO{sub 2} film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO{sub 3} and H{sub 2}O vapor at varied process durations

Energy Technology Data Exchange (ETDEWEB)

Poobalan, Banu [Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia); Moon, Jeong Hyun; Kim, Sang-Cheol; Joo, Sung-Jae; Bahng, Wook; Kang, In Ho; Kim, Nam-Kyun [Power Semiconductor Research Centre, Korea Electrotechnology Research Institute, PO Box 20, Changwon, Gyungnam 641120 (Korea, Republic of); Cheong, Kuan Yew, E-mail: cheong@eng.usm.my [Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia)

2014-11-03

This study has revealed that HNO{sub 3} and H{sub 2}O vapors can be utilized as direct thermal oxidation or postoxidation annealing agents at a temperature above 1000 °C; as they play a major role in simultaneous oxidation/nitridation/hydrogenation processes at the bulk oxide and SiO{sub 2}/SiC interface. The varied process durations of the above-mentioned techniques contribute to the development of thicker gate oxides for high power device applications with improved electrical properties, lower interface-state density and higher breakdown voltage as compared to oxides grown through a more conventional wet (H{sub 2}O vapor only) oxidation technique. The study highlights the effects of hydrogen and nitrogen species on the passivation of structural defects at the bulk oxide and the SiO{sub 2}/SiC interface, which are revealed through the use of Time-of-Flight Secondary Ion Mass Spectroscopy and X-ray Photoelectron Spectroscopy. The physical properties of the substrate after oxide removal show that the surface roughness decreases as the process durations increase with longer hours of H{sub 2}O and HNO{sub 3} vapor exposures on the samples, which is mainly due to the significant reduction of carbon content at the SiO{sub 2}/SiC interface. - Highlights: • Direct thermal oxidation and postoxidation annealing techniques in HNO{sub 3}/H{sub 2}O vapor • SiO{sub 2} film growth in H{sub 2}O/HNO{sub 3}vapor at varied process durations • Thicker SiO{sub 2} film growth via annealing than direct growth in HNO{sub 3}/H{sub 2}O vapor • Nitrogen and hydrogen as passivation elements in SiO{sub 2}/SiC interface and SiO{sub 2} bulk • Significant reduction of carbon and Si-dangling bonds at the SiC/SiO{sub 2} interface.

High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

International Nuclear Information System (INIS)

Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

1988-01-01

A rapid thermal anneal (RTA) in an NH 3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 0 C in NH 3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 0 C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi 2 phase. In contrast, after a prior 900 0 C RTA in NH 3 , N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi 2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 0 C NH 3 anneal. The NH 3 -treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 0 C, at which point some increase in contact resistance was measured

Effects of thickness and annealing condition on magnetic properties and thermal stabilities of Ta/Nd/NdFeB/Nd/Ta sandwiched films

International Nuclear Information System (INIS)

Liu Wen-Feng; Zhang Min-Gang; Zhang Ke-Wei; Zhang Hai-Jie; Chai Yue-Sheng; Xu Xiao-Hong

2016-01-01

Ta/Nd/NdFeB/Nd/Ta sandwiched films are deposited by magnetron sputtering on Si (100) substrates, and subsequently annealed in vacuum at different temperatures for different time. It is found that both the thickness of NdFeB and Nd layer and the annealing condition can affect the magnetic properties of Ta/Nd/NdFeB/Nd/Ta films. Interestingly, the thickness and annealing temperature show the relevant behaviors that can affect the magnetic properties of the film. The high coercivity of 24.1 kOe (1 Oe = 79.5775 A/m) and remanence ratio (remanent magnetization/saturation magnetization) of 0.94 can be obtained in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed for 3 min at 1023 K. In addition, the thermal stability of the film is also linked to the thickness of NdFeB and Nd layer and the annealing temperature as well. The excellent thermal stability can be achieved in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed at 1023 K. (paper)

1-Dimensional simulation of thermal annealing in a commercial nuclear power plant reactor pressure vessel wall section

International Nuclear Information System (INIS)

Nakos, J.T.; Rosinski, S.T.; Acton, R.U.

1994-11-01

The objective of this work was to provide experimental heat transfer boundary condition and reactor pressure vessel (RPV) section thermal response data that can be used to benchmark computer codes that simulate thermal annealing of RPVS. This specific protect was designed to provide the Electric Power Research Institute (EPRI) with experimental data that could be used to support the development of a thermal annealing model. A secondary benefit is to provide additional experimental data (e.g., thermal response of concrete reactor cavity wall) that could be of use in an annealing demonstration project. The setup comprised a heater assembly, a 1.2 in x 1.2 m x 17.1 cm thick [4 ft x 4 ft x 6.75 in] section of an RPV (A533B ferritic steel with stainless steel cladding), a mockup of the open-quotes mirrorclose quotes insulation between the RPV and the concrete reactor cavity wall, and a 25.4 cm [10 in] thick concrete wall, 2.1 in x 2.1 in [10 ft x 10 ft] square. Experiments were performed at temperature heat-up/cooldown rates of 7, 14, and 28 degrees C/hr [12.5, 25, and 50 degrees F/hr] as measured on the heated face. A peak temperature of 454 degrees C [850 degrees F] was maintained on the heated face until the concrete wall temperature reached equilibrium. Results are most representative of those RPV locations where the heat transfer would be 1-dimensional. Temperature was measured at multiple locations on the heated and unheated faces of the RPV section and the concrete wall. Incident heat flux was measured on the heated face, and absorbed heat flux estimates were generated from temperature measurements and an inverse heat conduction code. Through-wall temperature differences, concrete wall temperature response, heat flux absorbed into the RPV surface and incident on the surface are presented. All of these data are useful to modelers developing codes to simulate RPV annealing

Thermal decomposition of silane to form hydrogenated amorphous Si

Science.gov (United States)

Strongin, M.; Ghosh, A.K.; Wiesmann, H.J.; Rock, E.B.; Lutz, H.A. III

Hydrogenated amorphous silicon is produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700 to 2300/sup 0/C, in a vacuum of about 10/sup -8/ to 10/sup -4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate to form hydrogenated amorphous silicon.

Highly Efficient Organic UV Photodetectors Based on Polyfluorene and Naphthalenediimide Blends: Effect of Thermal Annealing

Directory of Open Access Journals (Sweden)

Gorkem Memisoglu

2012-01-01

Full Text Available A solution-processed organic ultraviolet photodetector (UV-PD is introduced. The active layer of the UV-PD consists of poly(9,9-dioctyl fluorenyl-2,7–yleneethynylene (PFE and N,N′-bis-n-butyl-1,4,5,8- naphthalenediimide (BNDI with a weight ratio of 3 : 1 in chloroform. The effect of thermal annealing on the device properties was investigated from room temperature to 80∘C. The full device structure of ITO/PEDOT:PSS/PFE:BNDI (3 : 1/Al gave responsivity of 410 mA/W at −4 V under 1 mW/cm2 UV light at 368 nm when 60∘C of annealing temperature was used during its preparation. The devices that were annealed over the crystallization temperature of PFE showed a charge transfer resistance increase and a mobility decrease.

Time effects in the thermal annealing of Fe/V multilayers

CERN Document Server

Borges, J F M

2003-01-01

We report a study on the structural and magnetic properties of iron-vanadium thin films grown in multilayer form and mixed by thermal treatment. The multilayer samples were annealed at 610 deg. C for times ranging from 10 to 540 min. The samples were structurally characterized by means of x-ray diffraction (XRD) and by x-ray absorption spectroscopy (XAS). The magnetic characterization was carried out with a conventional alternating gradient magnetometer (AGM) and by conversion electron Moessbauer spectroscopy (CEMS). The XRD result for the as-deposited multilayer shows a high degree of crystallinity while the CEMS result suggests an abrupt interface, since no significant contribution from vanadium in iron is observed. After the thermal treatment, the results from XRD show a phase transformation of the disordered body-centred-cubic structure (alpha-phase) into a tetragonal structure (sigma-phase) and a subsequent return to the alpha-phase. This alpha-sigma-alpha oscillation is not reported in the literature av...

Simulation of the diffusion of implanted impurities in silicon structures at the rapid thermal annealing

International Nuclear Information System (INIS)

Komarov, F.F.; Komarov, A.F.; Mironov, A.M.; Makarevich, Yu.V.; Miskevich, S.A.; Zayats, G.M.

2011-01-01

Physical and mathematical models and numerical simulation of the diffusion of implanted impurities during rapid thermal treatment of silicon structures are discussed. The calculation results correspond to the experimental results with a sufficient accuracy. A simulation software system has been developed that is integrated into ATHENA simulation system developed by Silvaco Inc. This program can simulate processes of the low-energy implantation of B, BF 2 , P, As, Sb, C ions into the silicon structures and subsequent rapid thermal annealing. (authors)

Pure thermal sensitisation and pre-dose effect of OSL in both unfired and annealed quartz samples

Energy Technology Data Exchange (ETDEWEB)

Oniya, Ebenezer O., E-mail: ebenezer.oniya@aaua.edu.ng [Physics and Electronics Department, Adekunle Ajasin University, 342111 Akungba Akoko (Nigeria); Polymeris, George S. [Institute of Nuclear Sciences, Ankara University, Beşevler 06100, Ankara (Turkey); Jibiri, Nnamdi N. [Department of Physics, University of Ibadan, Ibadan (Nigeria); Tsirliganis, Nestor C. [Department of Archaeometry and Physicochemical Measurements, R.C. ‘Athena’, P.O. Box 159, Kimmeria University Campus, 67100 Xanthi (Greece); Babalola, Israel A. [Department of Physics, University of Ibadan, Ibadan (Nigeria); Kitis, George [Nuclear Physics Laboratory, Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

2017-06-01

The sensitisation of quartz has attracted much attention since its thorough understanding is important in luminescence studies and dating applications. The present investigation examines the influence of pure thermal activation and predose treatments on the sensitisation of different components of linearly modulated optically stimulated luminescence (LM-OSL) measured at room temperature (RT) thereby eliminating undesired thermal quenching effects. Annealed and unfired quartz samples from Nigeria were used. The OSL measurements were carried out using an automated RISØTL/OSL reader (model-TL/OSL–DA–15). A new approach was adopted to match each of the resolved components of the RT-LM-OSL to respective thermoluminescence (TL) peaks that share the same electron trap and recombination centers. Pure thermal activation and pre-dose treatments respectively affect the sensitisation of all the components of the RT-LM-OSL in a similar manner as the one reported for the 110 °C TL peak but without thermal quenching contributions. Component C4 in annealed samples that was identified to share the same electron trap and recombination centers with the 110 °C TL peak was also proved appropriate for RT-LM-OSL, instead of the initial part of the continuous wave (CW) OSL signal, thus the methods can serve as complementary dating methods.

Pure thermal sensitisation and pre-dose effect of OSL in both unfired and annealed quartz samples

International Nuclear Information System (INIS)

Oniya, Ebenezer O.; Polymeris, George S.; Jibiri, Nnamdi N.; Tsirliganis, Nestor C.; Babalola, Israel A.; Kitis, George

2017-01-01

The sensitisation of quartz has attracted much attention since its thorough understanding is important in luminescence studies and dating applications. The present investigation examines the influence of pure thermal activation and predose treatments on the sensitisation of different components of linearly modulated optically stimulated luminescence (LM-OSL) measured at room temperature (RT) thereby eliminating undesired thermal quenching effects. Annealed and unfired quartz samples from Nigeria were used. The OSL measurements were carried out using an automated RISØTL/OSL reader (model-TL/OSL–DA–15). A new approach was adopted to match each of the resolved components of the RT-LM-OSL to respective thermoluminescence (TL) peaks that share the same electron trap and recombination centers. Pure thermal activation and pre-dose treatments respectively affect the sensitisation of all the components of the RT-LM-OSL in a similar manner as the one reported for the 110 °C TL peak but without thermal quenching contributions. Component C4 in annealed samples that was identified to share the same electron trap and recombination centers with the 110 °C TL peak was also proved appropriate for RT-LM-OSL, instead of the initial part of the continuous wave (CW) OSL signal, thus the methods can serve as complementary dating methods.

Effect of the post-annealing temperature on the thermal-decomposed NiOx hole contact layer for perovskite solar cells

Directory of Open Access Journals (Sweden)

Yuxiao Guo

2018-02-01

Full Text Available A hysteresis-less inverted perovskite solar cell (PSC with power conversion efficiency (PCE of 13.57% was successfully achieved based on the thermal-decomposed NiOx hole contact layer, possessing better electron blocking and hole extraction properties for its suitable work function and high-conduction band edge position. Herein, the transparent and high-crystalline NiOx film is prepared by thermal-decomposing of the solution-derived Ni(OH2 film in our study, which is then employed as hole transport layer (HTL of the organic–inorganic hybrid PSCs. Reasonably, the post-annealing treatment, especially for the annealing temperature, could greatly affect the Ni(OH2 decomposition process and the quality of decomposed NiOx nanoparticles. The vital NiOx HTLs with discrepant morphology, crystallinity and transmission certainly lead to a wide range of device performance. As a result, an annealing process of 400∘C/2h significantly promotes the photovoltaic properties of the NiOx layer and the further device performance.

Origin of two maxima in specific heat in enthalpy relaxation under thermal history composed of cooling, annealing, and heating.

Science.gov (United States)

Sakatsuji, Waki; Konishi, Takashi; Miyamoto, Yoshihisa

2016-12-01

The origin of two maxima in specific heat observed at the higher and the lower temperatures in the glass-transition region in the heating process has been studied for polymethyl methacrylate and polyvinyl chloride using differential scanning calorimetry, and the calculation was done using the phenomenological model equation under a thermal history of the typical annealing experiment composed of cooling, annealing, and heating. The higher maximum is observed above the glass-transition temperature, and it remains almost unchanged independent of annealing time t_{a}, while the lower one is observed above an annealing temperature T_{a} and shifts toward the higher one, increasing its magnitude with t_{a}. The analysis by the phenomenological model equation proposed in order to interpret the memory effect in the glassy state clarifies that under a typical annealing history, two maxima in specific heat essentially appear. The shift of the lower maximum toward higher temperatures from above T_{a} is caused by an increase in the amount of relaxation during annealing with t_{a}. The annealing temperature and the amount of relaxation during annealing play a major role in the determination of the number of maxima in the specific heat.

Influence of thermal annealing on the morphology and structural properties of a conjugated polymer in blends with an organic acceptor material

CSIR Research Space (South Africa)

Motaung, DE

2009-06-01

Full Text Available variation in morphology during annealing due to the crystallization of C60. The as-prepared P3HT:C60 films have a higher surface roughness and larger cluster size compared to the as-prepared P3HT films. The thermal annealing effects on the optical microscopy...

Hydrogen production by thermal water splitting using a thermal plasma

International Nuclear Information System (INIS)

Boudesocque, N.; Lafon, C.; Girold, C.; Vandensteendam, C.; Baronnet, J.M.

2006-01-01

CEA has been working for more than 10 years in plasma technologies devoted to waste treatment: incineration, vitrification, gases and liquid treatment. Based on this experience, CEA experiments since several years an innovative route for hydrogen production by thermal water splitting, using a plasma as heat source. This new approach could be considered as an alternative to electrolysis for massive hydrogen production from water and electricity. This paper presents a brief state of the art of water thermal plasmas, showing the temperatures and quench velocity ranges technologically achievable today. Thermodynamic properties of a water plasma are presented and discussed. A kinetic computational model is presented, describing the behavior of splitted products during the quench in a plasma plume for various parameters, such as the quench rate. The model results are compared to gas analysis in the plasma plume obtained with in-situ sampling probe. The plasma composition measurements are issued from an Optical Emission Spectroscopic method (OES). The prediction of 30 % H 2 recovery with a 108 K.s -1 quench rate has been verified. A second experimentation has been performed: mass gas analysis, flowrate measurement and OES to study the 'behavior' and species in underwater electrical arc stricken between graphite electrodes. With this quench, a synthesis gas was produced with a content 55 % of hydrogen. (authors)

Organic products from Ca14Co3 autoradiolysis: effects of thermal annealing

International Nuclear Information System (INIS)

Albarran S, M.G.; Collins, K.E.; Collins, C.H.

1986-01-01

Autoradiolysis of Ca 14 Co 3 produces several different low molecular mass organic compounds which can be conveniently observed after ion exclusion-partition chromatographic separation of the dissolved sample, provided that the solid was prepared with high specific activity carbon-14 and has been stored for a sufficiently long period. Subsequent thermal annealing changes the distribution of these observed compounds, demonstrating that chemical reactions of the precursor species take place in the solid Ca 14 Co 3 matrix. Specifically, the following products were observed after an autoradiolytic dose of 5 MGy: methanol, formaldehyde, formic acid, oxalic acid, glyoxylic acid, glycolic acid and acetic acid, with-G-values ranging from 5x10 -6 to 2x10 -3 . Isochronal annealing to 500 0 C markedly changes the yields of carbon-14 labelled formic and acetic acids but has lesser effects on the other acidic products. This indicates that several different precursor species are present in the autoradiolyzed solid. (Author) [pt

Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

International Nuclear Information System (INIS)

Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo

2011-01-01

The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)

2011-10-15

The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

Effect of thermal annealing on the microstructures and photocatalytic performance of silver orthophosphate: The synergistic mechanism of Ag vacancies and metallic Ag

International Nuclear Information System (INIS)

Yan, Tingjiang; Guan, Wenfei; Xiao, Ying; Tian, Jun; Qiao, Zheng; Zhai, Huishan; Li, Wenjuan; You, Jinmao

2017-01-01

Highlights: • Ag_3PO_4 was initially prepared via ion-exchange reaction and then annealed in air. • Thermal annealing also resulted in the formation of metallic Ag and Ag vacancies. • The annealed samples exhibited superior activity to the pristine sample. • Both Ag vacancies and metallic Ag contributed to the high activity. - Abstract: In this work, a simple thermal annealing route has been developed to improve the photocatalytic performance of silver orthophosphate (Ag_3PO_4) photocatalyst toward organic pollutants degradation under visible light irradiation. The experimental results indicated that thermal treatment of Ag_3PO_4 led to an obvious lattice shift towards right and significantly narrowed band gap energies due to the formation of Ag vacancies and metallic Ag during Ag_3PO_4 decomposition. These structural variations notably affected the photocatalytic performance of Ag_3PO_4 photocatalysts. The activity of the annealed samples was found to be significantly enhanced toward the degradation of MO dye. The highest activity was observed over the sample annealed at 400 °C, which exceeded that of pristine Ag_3PO_4 by a factor of about 21 times. By means of photoluminescence spectroscopy and photoelectrochemical measurements, we propose that the enormous enhancement in activity was mainly attributed to the efficient separation of photogenerated electrons and holes driven by the synergistic effect of Ag vacancies and metallic Ag. The strong interaction between annealed particles also inhibited the dissolution of Ag"+ from Ag_3PO_4 into aqueous solution, contributing to an improved photocatalytic stability. The strategy presented here provides an ideal platform for the design of other highly efficient and stable Ag-based photocatalysts for broad applications in the field of photocatalysis.

Concept study of a hydrogen containment process during nuclear thermal engine ground testing

Directory of Open Access Journals (Sweden)

Ten-See Wang

Full Text Available A new hydrogen containment process was proposed for ground testing of a nuclear thermal engine. It utilizes two thermophysical steps to contain the hydrogen exhaust. First, the decomposition of hydrogen through oxygen-rich combustion at higher temperature; second, the recombination of remaining hydrogen with radicals at low temperature. This is achieved with two unit operations: an oxygen-rich burner and a tubular heat exchanger. A computational fluid dynamics methodology was used to analyze the entire process on a three-dimensional domain. The computed flammability at the exit of the heat exchanger was less than the lower flammability limit, confirming the hydrogen containment capability of the proposed process. Keywords: Hydrogen decomposition reactions, Hydrogen recombination reactions, Hydrogen containment process, Nuclear thermal propulsion, Ground testing

Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

International Nuclear Information System (INIS)

Zhou, L.H.; Zhang, C.H.; Yang, Y.T.; Li, B.S.; Zhang, L.Q.; Fu, Y.C.; Zhang, H.H.

2009-01-01

In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 deg. C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.

Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis

International Nuclear Information System (INIS)

Khanh, N.Q.; Serenyi, M.

2010-01-01

Compete text of publication follows. Hydrogenated amorphous Si and Ge films are of current interest in academic and industrial research due to their unique physical properties and important applications. The incorporation of hydrogen in the amorphous network is an accepted means for reducing the density of defect states in the midgap. The passivation of dangling-bonds leads to a significant improvement in the electronic and optical properties of these layers. However, hydrogen is also suspected to degrade the performance of amorphous Si and Ge material and devices. Several studies related to hydrogen motion have been proposed to explain the light and thermal degradation effect in these layers. Thus to improve the performance and reliability of these devices, it is crucially important to understand the role of hydrogen in amorphous layers. In our previous works the structural changes of hydrogenated a-Si/Ge multilayers as a function of annealing condition was investigated. It was shown that during annealing the samples underwent significant structural changes. Due to the fast out-diffusion of hydrogen from the layers prepared with high (6 ml/min) H 2 flow rate, bubbles and craters were created on the surface. However, in the multilayer samples prepared with hydrogen flow rate lower than 6 ml/min the macroscopic degradation by formation bubbles and craters was more moderated. The diffusion measurement shows that in these samples the structural degradation and intermixing of layers was slower than in the non-hydrogenated samples. As it was suggested the hydrogen can inactivate the dangling bonds of amorphous layers and, as a result of this, the intermixing slows down. It was also predicted that the hydrogen first released from the Ge layers because of the lower binding energy. In this work, we have studied the individual a-Si and a-Ge hydrogenated layers prepared by RF sputtering on Si (100) substrates. The absolute value of atomic content of the H was determined by

High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

Energy Technology Data Exchange (ETDEWEB)

Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

1988-12-15

A rapid thermal anneal (RTA) in an NH/sub 3/ ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 /sup 0/C in NH/sub 3/ and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (greater than or equal to1000 /sup 0/C) RTA in Ar completely converted W into the low resistivity (31 ..mu cap omega.. cm) tetragonal WSi/sub 2/ phase. In contrast, after a prior 900 /sup 0/C RTA in NH/sub 3/, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi/sub 2/ formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 /sup 0/C NH/sub 3/ anneal. The NH/sub 3/-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 /sup 0/C, at which point some increase in contact resistance was measured.

Comparison of different experimental and analytical measures of the thermal annealing response of neutron-irradiated RPV steels

International Nuclear Information System (INIS)

Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

1997-01-01

The thermal annealing response of several materials as indicated by Charpy transition temperature (TT) and upper-shelf energy (USE), crack initiation toughness, K Jc , predictive models, and automated-ball indentation (ABI) testing are compared. The materials investigated are representative reactor pressure vessel (RPV) steels (several welds and a plate) that were irradiated for other tasks of the Heavy-Section Steel Irradiation (HSSI) Program and are relatively well characterized in the unirradiated and irradiated conditions. They have been annealed at two temperatures, 343 and 454 C (650 and 850 F) for varying lengths of time. The correlation of the Charpy response and the fracture toughness, ABI, and the response predicted by the annealing model of Eason et al. for these conditions and materials appears to be reasonable. The USE after annealing at the temperature of 454 C appears to recover at a faster rate than the TT, and even over-recovers (i.e., the recovered USE exceeds that of the unirradiated material)

Effect of Thermal Annealing and Second Harmonic Generation on Bulk Damage Performance of Rapid-Growth KDP Type I Doublers at 1064 nm

International Nuclear Information System (INIS)

Runkel, M; Maricle, S; Torres, R; Auerbach, J; Floyd, R; Hawley-Fedder, R; Burnham, A K

2000-01-01

This paper discusses the results of thermal annealing and in-situ second harmonic generation (SHG) damage tests performed on six rapid growth KDP type 1 doubler crystals at 1064 nm (1 ω) on the Zeus automated damage test facility. Unconditioned (S/1) and conditioned (R/1) damage probability tests were performed before and after thermal annealing, then with and without SHG on six doubler crystals from the NIF-size, rapid growth KDP boule F6. The tests revealed that unannealed, last-grown material from the boule in either prismatic or pyramidal sectors exhibited the highest damage curves. After thermal annealing at 160 C for seven days, the prismatic sector samples increased in performance ranging from 1.6 to 2.4X, while material from the pyramidal sector increased only modestly, ranging from 1.0 to 1.4X. Second harmonic generation decreased the damage fluence by an average of 20 percent for the S/1 tests and 40 percent for R/1 tests. Conversion efficiencies under test conditions were measured to be 20 to 30 percent and compared quite well to predicted behavior, as modeled by LLNL frequency conversion computer codes. The damage probabilities at the 1 ω NIF redline fluence (scaled to 10 ns via t 0.5 ) for S/1 tests for the unannealed samples ranged from 20 percent in one sample to 90-100 percent for the other 5 samples. Thermal annealing reduced the damage probabilities to less than 35 percent for 3 of the poor-performing crystals, while two pyramidal samples remained in the 80 to 90 percent range. Second harmonic generation in the annealed crystal increased the S/1 damage probabilities on all the crystals and ranged from 40 to 100 percent. In contrast, R/1 testing of an unannealed crystal resulted in a damage probability at the NIF redline fluence of 16%. Annealing increased the damage performance to the extent that all test sites survived NIF redline fluences without damage. Second harmonic generation in the R/1 test yielded a damage probability of less than 2

Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se2 solar cells on glass substrate

Science.gov (United States)

Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; Tayagaki, Takeshi; Guthrey, Harvey; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

2018-03-01

The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

Effect of Thermal Annealing on the Redistribution of Alkali Metals in Cu(In,Ga)Se2 Solar Cells on Glass Substrate

Energy Technology Data Exchange (ETDEWEB)

Guthrey, Harvey L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kamikawa, Yukiko [National Institute of Advanced Industrial Science and Technology (AIST); Nishinaga, Jiro [National Institute of Advanced Industrial Science and Technology (AIST); Ishizuka, Shogo [National Institute of Advanced Industrial Science and Technology (AIST); Tayagaki, Takeshi [National Institute of Advanced Industrial Science and Technology (AIST); Shibata, Hajime [National Institute of Advanced Industrial Science and Technology (AIST); Matsubara, Koji [National Institute of Advanced Industrial Science and Technology (AIST); Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST)

2018-03-02

The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

Formation of CaB6 in the thermal decomposition of the hydrogen storage material Ca(BH4)2.

Science.gov (United States)

Sahle, Christoph J; Sternemann, Christian; Giacobbe, Carlotta; Yan, Yigang; Weis, Christopher; Harder, Manuel; Forov, Yury; Spiekermann, Georg; Tolan, Metin; Krisch, Michael; Remhof, Arndt

2016-07-20

Using a combination of high resolution X-ray powder diffraction and X-ray Raman scattering spectroscopy at the B K- and Ca L2,3-edges, we analyzed the reaction products of Ca(BH4)2 after annealing at 350 °C and 400 °C under vacuum conditions. We observed the formation of nanocrystalline/amorphous CaB6 mainly and found only small contributions from amorphous B for annealing times larger than 2 h. For short annealing times of 0.5 h at 400 °C we observed neither CaB12H12 nor CaB6. The results indicate a reaction pathway in which Ca(BH4)2 decomposes to B and CaH2 and finally reacts to form CaB6. These findings confirm the potential of using Ca(BH4)2 as a hydrogen storage medium and imply the desired cycling capabilities for achieving high-density hydrogen storage materials.

Electrode Materials, Thermal Annealing Sequences, and Lateral/Vertical Phase Separation of Polymer Solar Cells from Multiscale Molecular Simulations

KAUST Repository

Lee, Cheng-Kuang

2014-12-10

© 2014 American Chemical Society. The nanomorphologies of the bulk heterojunction (BHJ) layer of polymer solar cells are extremely sensitive to the electrode materials and thermal annealing conditions. In this work, the correlations of electrode materials, thermal annealing sequences, and resultant BHJ nanomorphological details of P3HT:PCBM BHJ polymer solar cell are studied by a series of large-scale, coarse-grained (CG) molecular simulations of system comprised of PEDOT:PSS/P3HT:PCBM/Al layers. Simulations are performed for various configurations of electrode materials as well as processing temperature. The complex CG molecular data are characterized using a novel extension of our graph-based framework to quantify morphology and establish a link between morphology and processing conditions. Our analysis indicates that vertical phase segregation of P3HT:PCBM blend strongly depends on the electrode material and thermal annealing schedule. A thin P3HT-rich film is formed on the top, regardless of bottom electrode material, when the BHJ layer is exposed to the free surface during thermal annealing. In addition, preferential segregation of P3HT chains and PCBM molecules toward PEDOT:PSS and Al electrodes, respectively, is observed. Detailed morphology analysis indicated that, surprisingly, vertical phase segregation does not affect the connectivity of donor/acceptor domains with respective electrodes. However, the formation of P3HT/PCBM depletion zones next to the P3HT/PCBM-rich zones can be a potential bottleneck for electron/hole transport due to increase in transport pathway length. Analysis in terms of fraction of intra- and interchain charge transports revealed that processing schedule affects the average vertical orientation of polymer chains, which may be crucial for enhanced charge transport, nongeminate recombination, and charge collection. The present study establishes a more detailed link between processing and morphology by combining multiscale molecular

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

Science.gov (United States)

Danchenko, V.; Fang, P. H.; Brashears, S. S.

1982-01-01

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Study of the optical properties and the carbonaceous clusters in thermally-annealed CR-39 and Makrofol-E polymer-based solid-state nuclear track detectors

International Nuclear Information System (INIS)

El Ghazaly, M.

2012-01-01

The induced modifications in the optical properties of CR-39 and Makrofol-E polymer-based solid state nuclear track detectors were investigated after thermal annealing at a temperature of 200 .deg. C for different durations. The optical properties were studied using an UV-visible spectrophotometer. From the UV-visible spectra, the direct and the indirect optical band gaps, Urbach's energies, and the number of carbon atoms in a cluster were determined. The absorbance of CR-39 plastic detector was found to decrease with increasing annealing time while the absorbance of Makrofol-E decreased with increasing annealing time. The width of the tail of localized states in the band gap ΔE was evaluated with the Urbach method. The optical energy band gaps were obtained from the direct and the indirect allowed transitions in K-space. Both of the direct and the indirect band gaps of the annealed CR-39 detector decrease with increasing annealing time while in Makrofol-E, they decreased after an annealing time of 15 minute and then showed no remarkable changes for a prolonged annealing times. Urbach's energy decreased significantly for both CR-39 and Makrofol-E with increasing annealing time. The number of carbon atoms in a cluster increased in the CR-39 detector with increasing annealing time while it decreased with increasing annealing time for Makrofol-E. We may conclude that the CR-39 detector undergoes greater modifications than the Makrofol-E detector upon thermal annealing at 200 .deg. C. In conclusion, the induced modifications in the optical properties of CR-39 and Makrofol-E are correlated with the temperature and the duration of annealing.

BEHAVIOR OF THERMAL SPRAY COATINGS AGAINST HYDROGEN ATTACK

OpenAIRE

Vargas, Fabio; Latorre, Guillermo; Uribe, Iván

2003-01-01

The behavior of nickel and chrome alloys applied as thermal spray coatings to be used as protection against embrittlement by hydrogen is studied. Coatings were applied on a carbon steel substrate, under conditions that allow obtain different crystalline structures and porosity levels, in order to determine the effect of these variables on the hydrogen permeation kinetics and as a protection means against embrittlement caused this element. In order to establish behaviors as barriers and protec...

Scalable effective-temperature reduction for quantum annealers via nested quantum annealing correction

Science.gov (United States)

Vinci, Walter; Lidar, Daniel A.

2018-02-01

Nested quantum annealing correction (NQAC) is an error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. The encoding replaces each logical qubit by a complete graph of degree C . The nesting level C represents the distance of the error-correcting code and controls the amount of protection against thermal and control errors. Theoretical mean-field analyses and empirical data obtained with a D-Wave Two quantum annealer (supporting up to 512 qubits) showed that NQAC has the potential to achieve a scalable effective-temperature reduction, Teff˜C-η , with 0 temperature of a quantum annealer. Such effective-temperature reduction is relevant for machine-learning applications. Since we demonstrate that NQAC achieves error correction via a reduction of the effective-temperature of the quantum annealing device, our results address the problem of the "temperature scaling law for quantum annealers," which requires the temperature of quantum annealers to be reduced as problems of larger sizes are attempted to be solved.

Thermal annealing of natural, radiation-damaged pyrochlore

Energy Technology Data Exchange (ETDEWEB)

Zietlow, Peter; Mihailova, Boriana [Hamburg Univ. (Germany). Dept. of Earth Sciences; Beirau, Tobias [Hamburg Univ. (Germany). Dept. of Earth Sciences; Stanford Univ., CA (United States). Dept. of Geological Sciences; and others

2017-03-01

Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400-1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1.10{sup 18} α-decay events per gram (dpg)], Panda Hill/Tanzania (1.6 wt% Th, 1.6.10{sup 18} dpg), and Blue River/Canada (10.5 wt% U, 115.4.10{sup 18} dpg), are compared with a crystalline reference pyrochlore from Schelingen (Germany). The type of structural recovery depends on the initial degree of radiation damage (Panda Hill 28%, Blue River 85% and Miass 100% according to XRD), as the recrystallization temperature increases with increasing degree of amorphization. Raman spectra indicate reordering on the local scale during annealing-induced recrystallization. As Raman modes around 800 cm{sup -1} are sensitive to radiation damage (M. T. Vandenborre, E. Husson, Comparison of the force field in various pyrochlore families. I. The A{sub 2}B{sub 2}O{sub 7} oxides. J. Solid State Chem. 1983, 50, 362, S. Moll, G. Sattonnay, L. Thome, J. Jagielski, C. Decorse, P. Simon, I. Monnet, W. J. Weber, Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes. Phys. Rev. 2011, 84, 64115.), the degree of local order was deduced from the ratio of the integrated intensities of the sum of the Raman bands between 605 and 680 cm{sup -1} divided by the sum of the integrated intensities of the bands between 810 and 860 cm{sup -1}. The most radiation damaged pyrochlore (Miass) shows an abrupt recovery of both, its short- (Raman) and long-range order (X-ray) between 800 and 850 K, while the weakly damaged pyrochlore (Panda Hill) begins to recover at considerably lower temperatures (near 500 K

Hydrogen concentration profiles and chemical bonding in silicon nitride

International Nuclear Information System (INIS)

Peercy, P.S.; Stein, H.J.; Doyle, B.L.; Picraux, S.T.

1978-01-01

The complementary technique of nuclear reaction analysis and infrared absorption were used to study the concentration profile and chemical bonding of hydrogen in silicon nitride for different preparation and annealing conditions. Silicon nitride prepared by chemical vapor deposition from ammonia-silane mixtures is shown to have hydrogen concentrations of 8.1 and 6.5 at.% for deposition temperatures of 750 and 900 0 C, respectively. Plasma deposition at 300 0 C from these gases results in hydrogen concentrations of approximately 22 at.%. Comparison of nuclear reaction analysis and infrared absorption measurements after isothermal annealing shows that all of the hydrogen retained in the films remains bonded to either silicon or nitrogen and that hydrogen release from the material on annealing is governed by various trap energies involving at least two N-H and one Si-H trap. Reasonable estimates of the hydrogen release rates can be made from the effective diffusion coefficient obtained from measurements of hydrogen migration in hydrogen implanted and annealed films

Enhanced antiadhesive properties of chitosan/hyaluronic acid polyelectrolyte multilayers driven by thermal annealing: Low adherence for mammalian cells and selective decrease in adhesion for Gram-positive bacteria.

Science.gov (United States)

Muzzio, Nicolás E; Pasquale, Miguel A; Diamanti, Eleftheria; Gregurec, Danijela; Moro, Marta Martinez; Azzaroni, Omar; Moya, Sergio E

2017-11-01

The development of antifouling coatings with restricted cell and bacteria adherence is fundamental for many biomedical applications. A strategy for the fabrication of antifouling coatings based on the layer-by-layer assembly and thermal annealing is presented. Polyelectrolyte multilayers (PEMs) assembled from chitosan and hyaluronic acid were thermally annealed in an oven at 37°C for 72h. The effect of annealing on the PEM properties and topography was studied by atomic force microscopy, ζ-potential, circular dichroism and contact angle measurements. Cell adherence on PEMs before and after annealing was evaluated by measuring the cell spreading area and aspect ratio for the A549 epithelial, BHK kidney fibroblast, C2C12 myoblast and MC-3T3-E1 osteoblast cell lines. Chitosan/hyaluronic acid PEMs show a low cell adherence that decreases with the thermal annealing, as observed from the reduction in the average cell spreading area and more rounded cell morphology. The adhesion of S. aureus (Gram-positive) and E. coli (Gram-negative) bacteria strains was quantified by optical microscopy, counting the number of colony-forming units and measuring the light scattering of bacteria suspension after detachment from the PEM surface. A 20% decrease in bacteria adhesion was selectively observed in the S. aureus strain after annealing. The changes in mammalian cell and bacteria adhesion correlate with the changes in topography of the chitosan/hyaluronic PEMs from a rough fibrillar 3D structure to a smoother and planar surface after thermal annealing. Copyright © 2017. Published by Elsevier B.V.

The effect of pre-heating and pre-irradiation with gamma rays on thermal annealing in bis [n-benzoil-n-phenyl hydroxilaminate] copper (II)

International Nuclear Information System (INIS)

Nakanishi, C.; Silva, C.P.G. da.

1988-10-01

The main purpose of this work was to make a contribution to the study of the chemical effects of the (n,γ) reaction on copper chelate. The influence of some factors such as pre-heating and pre-irradiation with gamma-rays on the retention and thermal annealing of bis-[N-benzoil-N-phenlhydroxilaminate] copper (II) was investigated. The complex was synthesized and later characterized by means of: determination of the melting-Point, elemental analysis, infra-red and vesible range absortion spectrophotometry. The compound was heated and also irradiated with gamma-rays in order to verify the effect of thermolysis and radiolysis on the retention. It seems that heat gamma-radiation can produce deffects which will lower the susceptibility of the compound to thermal annealing. On the model envolving electronic species some explanation of ours results were made and a mechanism was proposed for the retention and thermal annealing aasuming the capture of free electrons and also the existence of holes. (author) [pt

The effect of pre-heating and pre-irradiation with gamma-rays on thermal annealing in-bis-[n-benzoil-n-(o) tolylhydroxylaminate] cooper (II)

International Nuclear Information System (INIS)

Nakanishi, C.; Silva, C.P.G. da.

1990-02-01

The main purpose of this work was to make a contribution on the study of the chemical effects of the (N,γ) reaction on copper chelate. The influence of some factors such as pre-heating and pre-irradiation with gama-rays on the retention and thermal annealing of bis [N-benzoyl-N-(o)tolylhydroxylaminate] copper (II) was investigated. The complex was synthesized and later characterized by means of: determination of the melting-point, elemental analysis, infra-red and visible range absortion spectrophotometry. The compound was heated and also irradiated with gamma-rays in order to verify the effect of thermolysis on the retention. It seems that heat and gamma-radiaition can produce deffects which will lower the susceptibility of the compound to thermal annealling. On the basis on the model envolving electronic species some explanation of ours results were made and a mechanism was proposed for the retention and thermal annealing assuming the capture of free electrons and also the existence of holes. (author) [pt

Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Borghi, F.; Lenardi, C.; Podestà, A.; Milani, P., E-mail: pmilani@mi.infn.it [CIMAINA and Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy); Sogne, E. [CIMAINA and Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy); European School of Molecular Medicine (SEMM), IFOM-IEO, Milano (Italy); Merlini, M. [Dipartimento di Scienze della Terra “Ardito Desio”, Università degli Studi di Milano, via Mangiagalli 32, 20133 Milano (Italy); Ducati, C. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2016-08-07

Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments.

Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

International Nuclear Information System (INIS)

Borghi, F.; Lenardi, C.; Podestà, A.; Milani, P.; Sogne, E.; Merlini, M.; Ducati, C.

2016-01-01

Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments.

Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

KAUST Repository

Borghi, F.

2016-08-05

Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments. Published by AIP Publishing.

Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

KAUST Repository

Borghi, F.; Sogne, Elisa; Lenardi, C.; Podestà , A.; Merlini, M.; Ducati, C.; Milani, P.

2016-01-01

Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments. Published by AIP Publishing.

Thermoanalytical investigation of the hydrogen absorption behaviour of Sm{sub 2}Fe{sub 17-x}Ga{sub x} at high hydrogen pressures

Energy Technology Data Exchange (ETDEWEB)

Handstein, A.; Kubis, M.; Gebel, B.; Mueller, K.-H.; Schultz, L. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe; Gutfleisch, O.; Harris, I.R. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe]|[Birmingham Univ. (United Kingdom). School of Metallurgy and Materials

1998-07-01

The complete disproportionation of Sm{sub 2}Fe{sub 17-x}Ga{sub x} during annealing in hydrogen is hindered due to an increased stability of the compounds with a higher Ga content (x {>=} 1). Therefore the HD process as the first step of HDDR (hydrogenation-disproportionation-desorption-recombination) has to be carried out at a high hydrogen pressure for x {>=} 1. The hydrogen absorption behaviour of Sm{sub 2}Fe{sub 17-x}Ga{sub x} (x = 0, 0.5, 1 and 2) was investigated by means of hydrogen differential thermal analysis (HDTA) and high pressure differential scanning calorimetry (HPDSC) at hydrogen pressures up to 70 bar. A dependency of hydrogenation and disproportionation temperatures on hydrogen pressure and Ga content was found. The comparison with other substituents (M = Al and Si) instead of M = Ga showed an increased stability of Sm{sub 2}Fe{sub 17-x}M{sub x} compounds against disproportionation by hydrogen in the sequence Al, Ga and Si. The Curie temperatures of the interstitially hydrogenated Th{sub 2}Zn{sub 17}-type materials increase with the hydrogen pressure. In order to produce coercive and thermally stable Sm{sub 2}Fe{sub 15}Ga{sub 2}C{sub y} powder by means of the HDDR process, we recombined material disproportionated at different hydrogen pressures. Preliminary results of magnetic properties of this HDDR treated and gas-carburized Sm{sub 2}Fe{sub 15}Ga{sub 2}C{sub y} are discussed. (orig.)

Thermal annealing of fission tracks in fluorapatite, chlorapatite, manganoanapatite, and Durango apatite: experimental results

International Nuclear Information System (INIS)

Ravenhurst, C.E.; Roden-Tice, M.K.; Miller, D.S.

2003-01-01

It is well known that the optically measured lengths of fission tracks in apatite crystals are a function of etching conditions, crystallographic orientation of the track, composition of the crystal, and the state of thermal annealing. In this study we standardize etching conditions and optimize track length measurability by etching until etch pits formed at the surface of each apatite crystal reached widths of about 0.74 μm. Etching times using 5M HNO 3 at 21 o C were 31 s for Otter Lake, Quebec, fluorapatite; 47 s for Durango, Mexico, apatite; 33 s for Portland, Connecticut, manganoanapatite; and 11 s for Bamle, Norway, chlorapatite. An etching experiment using two etchant strengths (5M and 1.6M HNO 3 ) revealed that, despite significant differences in etch pit shape, fission-track length anisotropy with respect to crystallographic orientation of the tracks is not a chemical etching effect. A series of 227 constant-temperature annealing experiments were carried out on nuclear reactor induced tracks in oriented slices of the apatites. After etching, crystallographic orientations of tracks were measured along with their lengths. The 200-300 track lengths measured for each slice were ellipse-fitted to give the major (c crystallographic direction) and minor (a crystallographic direction) semi-axes used to calculate equivalent isotropic lengths. The equivalent isotropic length is more useful than mean length for thermal history analysis because the variation caused by anisotropy has been removed. Using normalized etching procedures and equivalent isotropic length data, we found that the fluorapatite anneals most readily, followed by Durango apatite, manganoanapatite, and lastly chlorapatite. (author)

Hydrogen interaction with oxidized Si(111) probed with positrons

International Nuclear Information System (INIS)

Lynn, K.G.; Nielsen, B.; Welch, D.O.

1989-01-01

A variable-energy positron beam was utilized to study the interface action of hydrogen with Si(111) covered by an ultrahigh-vacuum thermally grown oxide of 2-3 nm thickness. It was observed that positrons implanted at shallow depth (< 100 nm) after diffusion are trapped either at the interface between the oxide and the Si or in the oxide. The positron-annihilation characteristics of these trapped positrons are found to be very sensitive to hydrogen exposure. The momentum distribution of the annihilating positron-electron pair, as observed in the Doppler broadening of the annihilation line, broadens considerably after exposure to hydrogen. The effect recovers after annealing at ≅ 1100 K, suggesting a hydrogen binding at the interface of ∼ 3 ± 0.3 eV. (author). 18 refs., 3 figs

In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

DEFF Research Database (Denmark)

Ambrosini, S.; Wagner, Jakob Birkedal; Booth, Tim

2011-01-01

Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking...... faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment....

Crystallization degree change of expanded graphite by milling and annealing

International Nuclear Information System (INIS)

Tang Qunwei; Wu Jihuai; Sun Hui; Fang Shijun

2009-01-01

Expanded graphite was ball milled with a planetary mill in air atmosphere, and subsequently thermal annealed. The samples were characterized by using X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA). It was found that in the milling initial stage (less than 12 h), the crystallization degree of the expanded graphite declined gradually, but after milling more than 16 h, a recrystallization of the expanded graphite toke place, and ordered nanoscale expanded graphite was formed gradually. In the annealing initial stage, the non-crystallization of the graphite occurred, but, beyond an annealing time, recrystallizations of the graphite arise. Higher annealing temperature supported the recrystallization. The milled and annealed expanded graphite still preserved the crystalline structure as raw material and hold high thermal stability.

Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

International Nuclear Information System (INIS)

Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

2006-01-01

The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

Numerical methods for calculating thermal residual stresses and hydrogen diffusion

International Nuclear Information System (INIS)

Leblond, J.B.; Devaux, J.; Dubois, D.

1983-01-01

Thermal residual stresses and hydrogen concentrations are two major factors intervening in cracking phenomena. These parameters were numerically calculated by a computer programme (TITUS) using the FEM, during the deposition of a stainless clad on a low-alloy plate. The calculation was performed with a 2-dimensional option in four successive steps: thermal transient calculation, metallurgical transient calculation (determination of the metallurgical phase proportions), elastic-plastic transient (plain strain conditions), hydrogen diffusion transient. Temperature and phase dependence of hydrogen diffusion coefficient and solubility constant. The following results were obtained: thermal calculations are very consistent with experiments at higher temperatures (due to the introduction of fusion and solidification latent heats); the consistency is not as good (by 70 degrees) for lower temperatures (below 650 degrees C); this was attributed to the non-introduction of gamma-alpha transformation latent heat. The metallurgical phase calculation indicates that the heat affected zone is almost entirely transformed into bainite after cooling down (the martensite proportion does not exceed 5%). The elastic-plastic calculations indicate that the stresses in the heat affected zone are compressive or slightly tensile; on the other hand, higher tensile stresses develop on the boundary of the heat affected zone. The transformation plasticity has a definite influence on the final stress level. The return of hydrogen to the clad during the bainitic transformation is but an incomplete phenomenon and the hydrogen concentration in the heat affected zone after cooling down to room temperature is therefore sufficient to cause cold cracking (if no heat treatment is applied). Heat treatments are efficient in lowering the hydrogen concentration. These results enable us to draw preliminary conclusions on practical means to avoid cracking. (orig.)

Thermal characteristics during hydrogen fueling process of type IV cylinder

Energy Technology Data Exchange (ETDEWEB)

Kim, Sung Chan [Department of Fire and Disaster Prevention, Kyungil University, 33, Buhori, Hayang, Kyungsan 712-701 (Korea); Lee, Seung Hoon; Yoon, Kee Bong [Department of Mechanical Engineering, Chung Ang University, 221, Huksuk, Dongjak, Seoul 156-756 (Korea)

2010-07-15

Temperature increase during hydrogen fueling process is a significant safety concern of a high pressure hydrogen vessel. Hence, thermal characteristics of a Type IV cylinder during hydrogen filling process need to be understood. In this study, a series of experiments were conducted to quantify the temperature change of the cylinder during hydrogen filling to 35 MPa. Computational fluid dynamics (CFD) analysis was also conducted to simulate the conditions of the experiments. The results predicted by the CFD analysis show reasonable agreement with the experiments and the discrepancy between the CFD results and experimental results decrease with higher initial gas pressures. The upper and the lower parts of the vessel showed a temperature difference in the vertical direction. The upper gas temperature was higher than that of the lower part due to the buoyancy effect in the vessel. The maximum gas temperature was higher than the maximum temperature allowed in the ISO safety code (85 C) for the case in which the vessel was pressurized from 0 MPa to 35 MPa. This work contributes to the understanding of the thermal flow characteristics of the hydrogen filling process and notes that additional efforts should be made to guarantee the safety of a type IV cylinder during the hydrogen fueling process. (author)

X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

International Nuclear Information System (INIS)

Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

2010-01-01

Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

Study on thermal annealing of cadmium zinc telluride (CZT) crystals

International Nuclear Information System (INIS)

Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; James, R.B.

2010-01-01

Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

International Nuclear Information System (INIS)

Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

2012-01-01

Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

Thermal modeling of nickel-hydrogen battery cells operating under transient orbital conditions

Science.gov (United States)

Schrage, Dean S.

1991-01-01

An analytical study of the thermal operating characteristics of nickel-hydrogen battery cells is presented. Combined finite-element and finite-difference techniques are employed to arrive at a computationally efficient composite thermal model representing a series-cell arrangement operating in conjunction with a radiately coupled baseplate and coldplate thermal bus. An aggressive, low-mass design approach indicates that thermal considerations can and should direct the design of the thermal bus arrangement. Special consideration is given to the potential for mixed conductive and convective processes across the hydrogen gap. Results of a compressible flow model are presented and indicate the transfer process is suitably represented by molecular conduction. A high-fidelity thermal model of the cell stack (and related components) indicates the presence of axial and radial temperature gradients. A detailed model of the thermal bus reveals the thermal interaction of individual cells and is imperative for assessing the intercell temperature gradients.

Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xN x layers

International Nuclear Information System (INIS)

Bousbih, F.; Bouzid, S.B.; Hamdouni, A.; Chtourou, R.; Harmand, J.C.

2005-01-01

A set of GaAs 1-x N x samples with small nitrogen content were investigated by photoluminescence (PL) measurements as function of irradiance in order to investigate the effect of rapid thermal annealing (RTA) on photoluminescence (PL) properties. The analysis of PL spectra as function of irradiance and nitrogen content shows that the PL spectra associated to the GaAs 1- x N x layers are the result of the nitrogen localized state recombination. The results are examined as a consequence of a rapid thermal annealing (RTA). The variation of the emission band peak energy (E p ), at 10 K as a function of irradiance, is fitted by a theoretical model taking into account two types of nitrogen localized states. The variation of the PL intensity versus irradiance in the range from 1.59 to 159 W/cm 2 for different GaAs 1-x N x samples confirm that the PL spectra result from the nitrogen localized state recombination

Thermal energy distribution analysis for hydrogen production in RGTT200K conceptual design

International Nuclear Information System (INIS)

Tumpal Pandiangan; Ign Djoko Irianto

2011-01-01

RGTT200K is a high temperature gas-cooled reactor (HTGR) which conceptually designed for power generation, hydrogen production and desalination. Hydrogen production process in this design uses thermochemical method of Iodine-Sulphur. To increase the thermal conversion efficiency in hydrogen production installations, it needs to design a thermal energy distribution and temperature associated with the process of thermo-chemical processes in the method of Iodine-Sulphur. In this method there are 7 kinds of processes: (i) H 2 SO4 decomposition reaction (ii) treatment of vaporization (iii) treatment of pre vaporizer (iv) treatment of flash 4 (v) treatment of decomposition of HI (vi) treatment of the flash 1-3 and (vii) Bunsen reaction. To regulate the distribution of energy and temperature appropriate to the needs of each process used 3 pieces of heat exchanger (HE). Calculation of energy distribution through the distribution of helium gas flow has been done with Scilab application programs, so that can know the distribution of thermal energy for production of 1 mole of hydrogen. From this model, it can calculate the thermal energy requirement for production of hydrogen at the desired capacity. In the conceptual design of RGTT200K, helium discharge has been designed by 20 kg/s, so that an efficient hydrogen production capacity needed to produce 15347.8 for 21.74 mole of H 2 . (author)

Laser-annealed GaP OHMIC contacts for high-temperature devices

International Nuclear Information System (INIS)

Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

1980-01-01

The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

Thermal-annealing effects on the structural and magnetic properties of 10% Fe-doped SnO{sub 2} nanoparticles synthetized by a polymer precursor method

Energy Technology Data Exchange (ETDEWEB)

Aragón, F.H., E-mail: fermin964@hotmail.com [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília DF 70910-900 (Brazil); Instituto de Ciências Biológicas, Pós-graduação em Nanociência e Nanobiotecnologia, Universidade de Brasília, Brasilia DF 70919-970 (Brazil); Coaquira, J.A.H. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília DF 70910-900 (Brazil); Nagamine, L.C.C.M.; Cohen, R. [Instituto de Física, Universidade de São Paulo, São Paulo SP 05508-090 (Brazil); Silva, S.W. da [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília DF 70910-900 (Brazil); Instituto de Ciências Biológicas, Pós-graduação em Nanociência e Nanobiotecnologia, Universidade de Brasília, Brasilia DF 70919-970 (Brazil); and others

2015-02-01

In this work, we present the experimental results of Sn{sub 0.9}Fe{sub 0.1}O{sub 2} nanoparticles synthesized by a polymer precursor method. Studies were performed in the as-prepared (AP) and thermally-annealed (TA) samples. The X-ray diffraction (XRD) data analysis carried out using the Rietveld refinement method shows the formation of only the rutile-type structure in the AP sample and this phase remains stable for the TA sample. Additionally, the mean crystallite size shows an increase from ∼4 nm to ∼17 nm after the annealing and a clear reduction of the residual strain has also been determined. Micro-Raman spectroscopy measurements show the formation of an iron oxide phase (likely α-Fe{sub 2}O{sub 3}) after the thermal treatment. Magnetic measurements show a paramagnetic behavior for the AP sample and the coexistence of a weak ferromagnetism and paramagnetism for the TA sample. The magnetically-ordered contribution of the TA sample has been assigned to the formation of the hematite phase. DC and AC magnetic features of the TA sample are consistent with a cluster-glass behavior which seems to be related to the magnetic disorder of spins located at the particle surface. Those spins clusters seem to be formed due to the diffusion of iron ions from the core of the particle to the surface caused by the annealing process. - Highlights: • Thermal annealing effects in the 10% Fe-doped SnO{sub 2} nanoparticles have been studied. • XRD data analysis shows the formation of the rutile-type structure. • Raman measurements show the formation of small amount of α-Fe{sub 2}O{sub 3} after the annealing. • Paramagnetic and magnetically ordered phases were determined after the annealing. • Spin clusters likely at the particle surface have been formed after the annealing.

An anti-bacterial approach to nanoscale roughening of biomimetic rice-like pattern PP by thermal annealing

Science.gov (United States)

Jafari Nodoushan, Emad; Ebrahimi, Nadereh Golshan; Ayazi, Masoumeh

2017-11-01

In this paper, we introduced thermal annealing treatment as an effective way of increasing the nanoscale roughness of a semi-crystalline polymer surface. Annealing treatment applied to a biomimetic microscale pattern of rice leaf to achieve a superhydrophobic surface with a hierarchical roughness. Resulted surfaces was characterized by XRD, AFM and FE-SEM instruments and showed an increase of roughness and cristallinity within both time and temperature of treatment. These two parameters also impact on measured static contact angle up to 158°. Bacterial attachment potency has an inverse relationship with the similarity of surface pattern dimensions and bacterial size and due to that, thermal annealing could be an effective way to create anti-bacterial surface beyond its effect on water repellency. Point in case, the anti-bacterial properties of produced water-repellence surfaces of PP were measured and counted colonies of both gram-negative (E. coli) and gram-positive (S. aureus) bacteria reduced with the nature of PP and hierarchical pattern on that. Anti-bacterial characterization of the resulted surface reveals a stunning reduction in adhesion of gram-positive bacteria to the surface. S. aureus reduction rates equaled to 95% and 66% when compared to control blank plate and smooth surface of PP. Moreover, it also could affect the other type of bacteria, gram-negative (E. coli). In the latter case, adhesion reduction rates calculated 66% and 53% when against to the same controls, respectively.

Impact of Various Charge States of Hydrogen on Passivation of Dislocation in Silicon

Science.gov (United States)

Song, Lihui; Lou, Jingjing; Fu, Jiayi; Ji, Zhenguo

2018-03-01

Dislocation, one of typical crystallographic defects in silicon, is detrimental to the minority carrier lifetime of silicon wafer. Hydrogen passivation is able to reduce the recombination activity of dislocation, however, the passivation efficacy is strongly dependent on the experimental conditions. In this paper, a model based on the theory of hydrogen charge state control is proposed to explain the passivation efficacy of dislocation correlated to the peak temperature of thermal annealing and illumination intensity. Experimental results support the prediction of the model that a mix of positively charged hydrogen and negatively charged hydrogen at certain ratio can maximise the passivation efficacy of dislocation, leading to a better power conversion efficiency of silicon solar cell with dislocation in it.

Thermally regenerative hydrogen/oxygen fuel cell power cycles

Science.gov (United States)

Morehouse, J. H.

1986-01-01

Two innovative thermodynamic power cycles are analytically examined for future engineering feasibility. The power cycles use a hydrogen-oxygen fuel cell for electrical energy production and use the thermal dissociation of water for regeneration of the hydrogen and oxygen. The TDS (thermal dissociation system) uses a thermal energy input at over 2000 K to thermally dissociate the water. The other cycle, the HTE (high temperature electrolyzer) system, dissociates the water using an electrolyzer operating at high temperature (1300 K) which receives its electrical energy from the fuel cell. The primary advantages of these cycles is that they are basically a no moving parts system, thus having the potential for long life and high reliability, and they have the potential for high thermal efficiency. Both cycles are shown to be classical heat engines with ideal efficiency close to Carnot cycle efficiency. The feasibility of constructing actual cycles is investigated by examining process irreversibilities and device efficiencies for the two types of cycles. The results show that while the processes and devices of the 2000 K TDS exceed current technology limits, the high temperature electrolyzer system appears to be a state-of-the-art technology development. The requirements for very high electrolyzer and fuel cell efficiencies are seen as determining the feasbility of the HTE system, and these high efficiency devices are currently being developed. It is concluded that a proof-of-concept HTE system experiment can and should be conducted.

Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

Energy Technology Data Exchange (ETDEWEB)

El-Zammar, G., E-mail: georgio.elzammar@univ-tours.fr [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Khalfaoui, W. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Oheix, T. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Yvon, A.; Collard, E. [STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Cayrel, F.; Alquier, D. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France)

2015-11-15

Graphical abstract: Surface state of a crack-free AlN cap-layer reactive sputtered on GaN and annealed at high temperature showing a smooth, pit-free surface. - Highlights: • We deposit a crystalline AlN layer by reactive magnetron sputtering on GaN. • We show the effect of deposition parameters of AlN by reactive magnetron sputtering on the quality of the grown layer. • We demonstrate the efficiency of double cap-layer for GaN protection during high temperature thermal treatments. • We show an efficient selective etch of AlN without damaging GaN surface. - Abstract: Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiO{sub x}) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H{sub 3}PO{sub 4} at 120 °C for AlN and in HF (10%) for SiO{sub x}. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

International Nuclear Information System (INIS)

Liu Fang; Qin Zhixin

2016-01-01

Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al 0.45 Ga 0.55 N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni/Au Schottky, the samples were thermal annealed in the N 2 gas at 400 °C. The reverse leakage current density of Al 0.45 Ga 0.55 N Schottky diode was reduced by 2 orders of magnitude at −10 V. The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Further capacitance–frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies. The capacitance–frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment. (paper)

Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing

Science.gov (United States)

Zhao, Chong-Jun; Liu, Yang; Zhang, Jing-Yan; Sun, Li; Ding, Lei; Zhang, Peng; Wang, Bao-Yi; Cao, Xing-Zhong; Yu, Guang-Hua

2012-08-01

To reveal thermal effects on the film quality/microstructure evolution and the resulted magnetoresistance (MR) ratio in MgO/NiFe/MgO heterostructures, positron annihilation spectroscopy studies have been performed. It is found that the ionic interstitials in the MgO layers recombine with the nearby vacancies at lower annealing temperatures (200-300 °C) and lead to a slow increase in sample MR. Meanwhile, vacancy defects agglomeration/removal and ordering acceleration in MgO will occur at higher annealing temperatures (450-550 °C) and the improved MgO and MgO/NiFe interfaces microstructure are responsible for the observed significant MR enhancement.

Effect of annealing treatment on structure and electrochemical performance of quenched MmNi4.2Co0.3Mn0.4Al0.3Mg0.03 hydrogen storage alloy

International Nuclear Information System (INIS)

Zhou Zenglin; Song Yueqing; Cui Shun; Huang Changgeng; Qian Wenlian; Lin Chenguang; Zhang Yongjian; Lin Yulin

2010-01-01

MmNi 4.2 Co 0.3 Mn 0.4 Al 0.3 Mg 0.03 hydrogen storage alloy was prepared by single-roll rapid quenching followed by different annealing treatments for 8 h at 1133 K, 1173 K, 1213 K, and 1253 K, respectively. Alloy structure, phase composition, pressure-composition-temperature (PCT) properties, and electrochemical performance of different annealed alloys have been investigated by X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), energy dispersion spectrometer (EDS), automatic Sieverts-type apparatus, and electrochemical experiments. Electrochemical experiments indicate that the annealing treatment at 1213 K extends cycle life from 193 cycles to 358 cycles, increases the maximum discharge capacity, and slightly decreases the activation behavior. Alloy structure analyses show that the improvement in cycle life is attributed to the formation of a single CaCu 5 -type structure or the relief of an Mg-containing AlMnNi 2 -type second phase. Pressure composition isotherms results illustrate that both the hydrogen absorption capability and the dehydriding equilibrium pressure go up with increased annealing temperature. For its good performance/cost ratio, the Mg-added low-Co alloy annealed at 1213 K would be a promising substitution for MmNi 4.05 Co 0.45 Mn 0.4 Al 0.3 alloy product.

Hydrogen migration in Lu at low temperatures

International Nuclear Information System (INIS)

Yamakawa, K.

1997-01-01

The migration of hydrogen in Lu is determined by electrical resistance measurements in temperature range of 140-170 K. Disordered hydrogen atoms, which are formed by quenching, migrate to order during annealing in the above temperature range. The rate of the resistance decrease depends on the ordering rate of hydrogen. From the resistance decrease during isothermal annealings, the activation energy of hydrogen migration is determined as 0.43 eV (41.5 kJ mol -1 ). (orig.)

Study of thermal annealing effect on Bragg gratings photo-inscribed in step-index polymer optical fibers

Science.gov (United States)

Hu, X.; Kinet, D.; Mégret, P.; Caucheteur, C.

2016-04-01

In this paper, both non-annealed and annealed trans-4-stilbenemethanol-doped step-index polymer optical fibers were photo-inscribed using a 325 nm HeCd laser with two different beam power densities reaching the fiber core. In the high density regime where 637 mW/mm2 are used, the grating reflectivity is stable over time after the photo-writing process but the reflected spectrum is of limited quality, as the grating physical length is limited to 1.2 mm. To produce longer gratings exhibiting more interesting spectral features, the beam is enlarged to 6 mm, decreasing the power density to 127 mW/mm2. In this second regime, the grating reflectivity is not stable after the inscription process but tends to decay for both kinds of fibers. A fortunate property in this case results from the possibility to fully recover the initial reflectivity using a post-inscription thermal annealing, where the gratings are annealed at 80 °C during 2 days. The observed evolutions for both regimes are attributed to the behavior of the excited intermediate states between the excited singlet and the ground singlet state of trans- and cis-isomers as well as the temperature-dependent glassy polymer matrix.

Electrical characteristics and preparation of (Ba0.5Sr0.5)TiO3 films by spray pyrolysis and rapid thermal annealing

International Nuclear Information System (INIS)

Koo, Horngshow; Ku, Hongkou; Kawai, Tomoji; Chen Mi

2007-01-01

Functional films of (Ba 0.5 Sr 0.5 )TiO 3 on Pt (1000 A)/Ti (100 A)/SiO 2 (2000 A)/Si substrates are prepared by spray pyrolysis and subsequently rapid thermal annealing. Barium nitrate, strontium nitrate and titanium isopropoxide are used as starting materials with ethylene glycol as solvent. For (Ba 0.5 Sr 0.5 )TiO 3 functional thin film, thermal characteristics of the precursor powder scratched from as-sprayed films show a remarkable peak around 300-400degC and 57.7% weight loss up to 1000degC. The as-sprayed precursor film with coffee-like color and amorphous-like phase is transformed into the resultant film with white, crystalline perovskite phase and characteristic peaks (110) and (100). The resultant films show correspondent increases of dielectric constant, leakage current and dissipation factor with increasing annealing temperatures. The dielectric constant is 264 and tangent loss is 0.21 in the resultant films annealed at 750degC for 5 min while leakage current density is 1.5x10 -6 A/cm 2 in the film annealed at 550degC for 5 min. (author)

Investigation of modified thin SnO2 layers treated by rapid thermal annealing by means of hollow cathode spectroscopy and AFM technique

International Nuclear Information System (INIS)

Djulgerova, R; Popova, L; Beshkov, G; Petrovic, Z Lju; Rakocevic, Z; Mihailov, V; Gencheva, V; Dohnalik, T

2006-01-01

By means of hollow cathode spectroscopy and atomic force microscopy the surface morphology and composition of SnO 2 thin film, modified with hexamethyldisilazane after rapid thermal annealing treatment (800-1200 deg. C), are investigated. Formation of crystalline structure is suggested at lower temperatures. Depolimerization, destruction and dehydration are developed at temperatures of 1200 deg. C. It is shown that the rapid thermal annealing treatment could modify both the surface morphology and the composition of the layer, thus changing the adsorption ability of the sensing layer. The results confirm the ability of hollow cathode emission spectroscopy for depth profiling of new materials especially combined with standard techniques

Thermal neutron diffusion parameters dependent on the flux energy distribution in finite hydrogenous media

International Nuclear Information System (INIS)

Drozdowicz, K.

1999-01-01

Macroscopic parameters for a description of the thermal neutron transport in finite volumes are considered. A very good correspondence between the theoretical and experimental parameters of hydrogenous media is attained. Thermal neutrons in the medium possess an energy distribution, which is dependent on the size (characterized by the geometric buckling) and on the neutron transport properties of the medium. In a hydrogenous material the thermal neutron transport is dominated by the scattering cross section which is strongly dependent on energy. A monoenergetic treatment of the thermal neutron group (admissible for other materials) leads in this case to a discrepancy between theoretical and experimental results. In the present paper the theoretical definitions of the pulsed thermal neutron parameters (the absorption rate, the diffusion coefficient, and the diffusion cooling coefficient) are based on Nelkin's analysis of the decay of a neutron pulse. Problems of the experimental determination of these parameters for a hydrogenous medium are discussed. A theoretical calculation of the pulsed parameters requires knowledge of the scattering kernel. For thermal neutrons it is individual for each hydrogenous material because neutron scattering on hydrogen nuclei bound in a molecule is affected by the molecular dynamics (characterized with internal energy modes which are comparable to the incident neutron energy). Granada's synthetic model for slow-neutron scattering is used. The complete up-dated formalism of calculation of the energy transfer scattering kernel after this model is presented in the paper. An influence of some minor variants within the model on the calculated differential and integral neutron parameters is shown. The theoretical energy-dependent scattering cross section (of Plexiglas) is compared to experimental results. A particular attention is paid to the calculation of the diffusion cooling coefficient. A solution of an equation, which determines the

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

Energy Technology Data Exchange (ETDEWEB)

King, Sean W., E-mail: sean.king@intel.com; Tanaka, Satoru; Davis, Robert F. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nemanich, Robert J. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2015-09-15

Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H{sub 2}) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700–1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H{sub 2} desorption at both lower temperatures (200–550 °C) as well as higher temperatures (>700 °C). The low temperature H{sub 2} desorption was deconvoluted into multiple desorption states that, based on similarities to H{sub 2} desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H{sub 2} desorption was similarly attributed to H{sub 2} evolved from surface O-H groups at ∼750 °C as well as the liberation of H{sub 2} during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C–O and

The influence of annealing on manganese implanted GaAs films

International Nuclear Information System (INIS)

Buerger, Danilo; Zhou, Shengqiang; Grenzer, Joerg; Reuther, Helfried; Anwand, Wolfgang; Gottschalch, Volker; Helm, Manfred; Schmidt, Heidemarie

2009-01-01

Besides low-temperature molecular beam epitaxy, ion implantation provides an alternative route to incorporate Mn into GaAs above the equilibrium solubility limit. Recently, Mn implanted GaAs diluted magnetic semiconductor was obtained by pulsed laser annealing. However, post-implantation annealing can lead to the formation of secondary phases. In order to compare the post-annealing effect, we investigate GaMnAs by implanting up to 6 at% Mn followed by rapid thermal and flashlamp annealing. The structural properties were probed by high resolution X-ray diffraction. The magnetic properties were determined by SQUID measurements. Auger electron spectroscopy has been used to profile the depth distribution of Mn in GaAs after implantation and annealing. We elucidate after implantation a loss of As and that during rapid thermal annealing most of the Mn diffuses towards the surface. Flash lamp annealing prevents out-diffusion, but the recrystallisation efficiency is low. Only the flash lamp annealed samples reveal weak ferromagnetism.

Recovery of deformed and hydrogen-charge palladium

International Nuclear Information System (INIS)

Snead, C.L. Jr.; Lynn, K.G.; Lynch, J.F.

1982-01-01

Positron lifetime and Doppler-broadening studies made at 300 K have been used to investigate the interaction between interstitial hydrogen and lattice defects in deformed Pd. Specimens were charged with hydrogen at 300 K to levels up to 0.1%. The presence of hydrogen was found to have no effect on the recovery curves of Pd upon annealing to 400 0 C. By 400 0 C the values for both lifetime and Doppler-broadening for both cold worked and cold worked plus hydrogen were below the values obtained for annealed pure Pd. This can be interpreted as gaseous-impurity-trapped vacancies being present after the 1200 0 C anneal, but being swept away by the dislocation microstructure recovery between 200 to 400 0 C

Physical properties of electrically conductive Sb-doped SnO2 transparent electrodes by thermal annealing dependent structural changes for photovoltaic applications

International Nuclear Information System (INIS)

Leem, J.W.; Yu, J.S.

2011-01-01

Highlights: · The physical properties of sputtered Sb-doped SnO 2 after annealing were studied. · The figure of merit was estimated from the integral PFD and sheet resistance. · The characteristics of Sb-doped SnO 2 films were optimized by the figure of merit. · An optimized Sb-doped SnO 2 layer is promising for high efficiency photovoltaic cells. - Abstract: We have investigated the optical and electrical characteristics of antimony (Sb)-doped tin oxide (SnO 2 ) films with modified structures by thermal annealing as a transparent conductive electrode. The structural properties were analyzed from the relative void % by spectroscopic ellipsometry as well as the scanning electron microscopy images and X-ray diffraction patterns. As the annealing temperature was raised, Sb-doped SnO 2 films exhibited a slightly enhanced crystallinity with the increase of the grain size from 17.1 nm at 500 deg. C to 34.3 nm at 700 deg. C. Furthermore, the refractive index and extinction coefficient gradually decreased due to the increase in the relative void % within the film during the annealing. The resistivity decreased to 8.2 x 10 -3 Ω cm at 500 deg. C, but it increased rapidly at 700 deg. C. After thermal annealing, the optical transmittance was significantly increased. For photovoltaic applications, the photonic flux density and the figure of merit over the entire solar spectrum were obtained, indicating the highest values of 5.4 x 10 14 cm -2 s -1 nm -1 at 1.85 eV after annealing at 700 deg. C and 340.1 μA cm -2 Ω -1 at 500 deg. C, respectively.

Effect of annealing ambience on the formation of surface/bulk oxygen vacancies in TiO2 for photocatalytic hydrogen evolution

Science.gov (United States)

Hou, Lili; Zhang, Min; Guan, Zhongjie; Li, Qiuye; Yang, Jianjun

2018-01-01

The surface and bulk oxygen vacancy have a prominent effect on the photocatalytic performance of TiO2. In this study, TiO2 possessing different types and concentration of oxygen vacancies were prepared by annealing nanotube titanic acid (NTA) at various temperatures in air or vacuum atmosphere. TiO2 with the unitary bulk single-electron-trapped oxygen vacancies (SETOVs) formed when NTA were calcined in air. Whereas, TiO2 with both bulk and surface oxygen vacancies were obtained when NTA were annealed in vacuum. The series of TiO2 with different oxygen vacancies were systematically characterized by TEM, XRD, PL, XPS, ESR, and TGA. The PL and ESR analysis verified that surface oxygen vacancies and more bulk oxygen vacancies could form in vacuum atmosphere. Surface oxygen vacancies can trap electron and hinder the recombination of photo-generated charges, while bulk SETOVs act as the recombination center. The surface or bulk oxygen vacancies attributed different roles on the photo-absorbance and activity, leading that the sample of NTA-A400 displayed higher hydrogen evolution rate under UV light, whereas NTA-V400 displayed higher hydrogen evolution rate under visible light because bulk SETOVs can improve visible light absorption because sub-band formed by bulk SETOVs prompted the secondary transition of electron excited.

Defect studies in annealed ZnO by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Sanyal, D; Roy, Tapatee Kundu; Chakrabarti, Mahuya; Dechoudhury, Siddhartha; Bhowmick, Debasis; Chakrabarti, Alok [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India)

2008-01-30

Coincidence Doppler broadening of the positron annihilation technique has been employed to identify the defects in thermally annealed 'as-received' ZnO and thermally annealed ball-milled nanocrystalline ZnO. Results indicate that a significant amount of oxygen vacancy has been created in ZnO due to annealing at about 500 deg. C and above. The results also indicate that the Zn vacancy created during the ball milling process can be easily removed by annealing the sample at about 500 deg. C and above. The defect characterization has also been correlated with the magnetic properties of ZnO.

Defect studies in annealed ZnO by positron annihilation spectroscopy

International Nuclear Information System (INIS)

Sanyal, D; Roy, Tapatee Kundu; Chakrabarti, Mahuya; Dechoudhury, Siddhartha; Bhowmick, Debasis; Chakrabarti, Alok

2008-01-01

Coincidence Doppler broadening of the positron annihilation technique has been employed to identify the defects in thermally annealed 'as-received' ZnO and thermally annealed ball-milled nanocrystalline ZnO. Results indicate that a significant amount of oxygen vacancy has been created in ZnO due to annealing at about 500 deg. C and above. The results also indicate that the Zn vacancy created during the ball milling process can be easily removed by annealing the sample at about 500 deg. C and above. The defect characterization has also been correlated with the magnetic properties of ZnO

Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

International Nuclear Information System (INIS)

Babinski, Adam; Jasinski, J.; Bozek, R.; Szepielow, A.; Baranowski, J. M.

2001-01-01

The effect of postgrowth rapid thermal annealing (RTA) on GaAs proximity-capped structures with self-assembled InAs/GaAs quantum dots (QDs) is investigated using transmission electron microscopy (TEM) and photoluminescence (PL). As can be seen from the TEM images, QDs increase their lateral sizes with increasing annealing temperature (up to 700 C). QDs cannot be distinguished after RTA at temperature 800 C or higher, and substantial thickening of the wetting layer can be seen instead. The main PL peak blueshifts as a result of RTA. We propose that in the as-grown sample as well, as in samples annealed at temperatures up to 700 C, the peak is due to the QDs. After RTA at 800 C and higher the PL peak is due to a modified wetting layer. Relatively fast dissolution of QDs is explained in terms of strain-induced lateral Ga/In interdiffusion. It is proposed that such a process may be of importance in proximity-capped RTA, when no group-III vacancy formation takes place at the sample/capping interface

Thermal desorption of hydrogen from Mg2Ni hydrogen storage materials.

Science.gov (United States)

Hur, Tae Hong; Han, Jeong Seb; Kim, Jin Ho; Kim, Byung Kwan

2011-07-01

In order to investigate the influence of HCS on the hydrogen occupation site of Mg2Ni alloy, the thermal desorption technique has been applied to Mg2Ni hydride made by hydriding combustion synthesis (HCS). Mg2Ni was made under low temperature in a short time by the HCS compared to conventional melting process. At various initial hydride wt% from 0.91 to 3.52, the sample was heated to 623 K at a rate of 1.0 K/min. The starting temperature of the evolution of hydrogen goes higher as the initial hydride wt% increases. Only one peak is shown in the case of the small initial hydride wt%. But two peaks appeared with increasing initial hydride wt%. The activation energies obtained by the first and second peaks are 113.0 and 99.5 kJ/mol respectively. The two site occupation model by Darriet et al. was proved. The influence of HCS on the hydrogen occupation site of Mg2Ni alloy is nonexistent.

Effects of thickness and annealing condition on magnetic properties and thermal stabilities of Ta/Nd/NdFeB/Nd/Ta sandwiched films

Science.gov (United States)

Liu, Wen-Feng; Zhang, Min-Gang; Zhang, Ke-Wei; Zhang, Hai-Jie; Xu, Xiao-Hong; Chai, Yue-Sheng

2016-11-01

Ta/Nd/NdFeB/Nd/Ta sandwiched films are deposited by magnetron sputtering on Si (100) substrates, and subsequently annealed in vacuum at different temperatures for different time. It is found that both the thickness of NdFeB and Nd layer and the annealing condition can affect the magnetic properties of Ta/Nd/NdFeB/Nd/Ta films. Interestingly, the thickness and annealing temperature show the relevant behaviors that can affect the magnetic properties of the film. The high coercivity of 24.1 kOe (1 Oe = 79.5775 A/m) and remanence ratio (remanent magnetization/saturation magnetization) of 0.94 can be obtained in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed for 3 min at 1023 K. In addition, the thermal stability of the film is also linked to the thickness of NdFeB and Nd layer and the annealing temperature as well. The excellent thermal stability can be achieved in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed at 1023 K. Program supported by the National Natural Science Foundation of China (Grant No. 51305290), the Higher Education Technical Innovation Project of Shanxi Province, China (Grant No. 2013133), the Fund Program for the Scientific Activities of Selected Returned Overseas Professionals of Shanxi Province, China (Grant No. 2015003), and the Program for the Key Team of Scientific and Technological Innovation of Shanxi Province, China (Grant No. 2013131009).

Role of hydrogen in the chemical vapor deposition growth of MoS2 atomic layers

Science.gov (United States)

Li, Xiao; Li, Xinming; Zang, Xiaobei; Zhu, Miao; He, Yijia; Wang, Kunlin; Xie, Dan; Zhu, Hongwei

2015-04-01

Hydrogen plays a crucial role in the chemical vapor deposition (CVD) growth of graphene. Here, we have revealed the roles of hydrogen in the two-step CVD growth of MoS2. Our study demonstrates that hydrogen acts as the following: (i) an inhibitor of the thermal-induced etching effect in the continuous film growth process; and (ii) a promoter of the desulfurization reaction by decreasing the S/Mo atomic ratio and the oxidation reaction of the obtained MoSx (0 desulfurization reaction by decreasing the S/Mo atomic ratio and the oxidation reaction of the obtained MoSx (0 < x < 2) films. A high hydrogen content of more than 100% in argon forms nano-sized circle-like defects and damages the continuity and uniformity of the film. Continuous MoS2 films with a high crystallinity and a nearly perfect S/Mo atomic ratio were finally obtained after sulfurization annealing with a hydrogen content in the range of 20%-80%. This insightful understanding reveals the crucial roles of hydrogen in the CVD growth of MoS2 and paves the way for the controllable synthesis of two-dimensional materials. Electronic supplementary information (ESI) available: Low-magnification optical images; Raman spectra of 0% and 5% H2 samples; AFM characterization; Schematic of the film before and after sulfurization annealing; Schematic illustrations of two typical Raman-active phonon modes (E12g, A1g); Raman (mapping) spectra for 40% and 80% H2 samples before and after sulfurization annealing; PL spectra. See DOI: 10.1039/c5nr00904a

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

Science.gov (United States)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Kinetic Monte Carlo study on the evolution of silicon surface roughness under hydrogen thermal treatment

Energy Technology Data Exchange (ETDEWEB)

Wang, Gang; Wang, Yu; Wang, Junzhuan; Pan, Lijia; Yu, Linwei; Zheng, Youdou; Shi, Yi, E-mail: yshi@nju.edu.cn

2017-08-31

Highlights: • The KMC method is adopted to investigate the relationships between surface evolution and hydrogen thermal treatment conditions. • The reduction in surface roughness is divided into two stages at relatively low temperatures, both exhibiting exponential dependence on the time. • The optimized surface structure can be obtained by precisely adjusting thermal treatment temperatures and hydrogen pressures. - Abstract: The evolution of a two-dimensional silicon surface under hydrogen thermal treatment is studied by kinetic Monte Carlo simulations, focusing on the dependence of the migration behaviors of surface atoms on both the temperature and hydrogen pressure. We adopt different activation energies to analyze the influence of hydrogen pressure on the evolution of surface morphology at high temperatures. The reduction in surface roughness is divided into two stages, both exhibiting exponential dependence on the equilibrium time. Our results indicate that a high hydrogen pressure is conducive to obtaining optimized surfaces, as a strategy in the applications of three-dimensional devices.

The thermal stability of the carbon-palladium films for hydrogen sensor applications

Science.gov (United States)

Rymarczyk, Joanna; Czerwosz, ElŻbieta; Diduszko, Ryszard; Kozłowski, Mirosław

2017-08-01

The thermal stability of two types of C-Pd films prepared in PVD process were studied. These films are composed of Pd nanograins embedded in a multiphase carbonaceous matrix. These films were distinguished by Pd content. These films were annealed in a range of temperatures 50÷1000°C. The structural, topographical and molecular changes were studied by scanning electron microscopy (SEM), infrared spectroscopy (FTIR) and X-ray diffraction (XRD) methods. The results show that investigated films are thermally stable up to 200°C.

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

Science.gov (United States)

Schwarze, G. E.; Frasca, A. J.

1991-01-01

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Thermal Annealing Effect on Poly(3-hexylthiophene: Fullerene:Copper-Phthalocyanine Ternary Photoactive Layer

Directory of Open Access Journals (Sweden)

H. Derouiche

2013-01-01

Full Text Available We have fabricated poly(3-hexylthiophene (P3HT/copper phthalocyanine (CuPc/fullerene (C60 ternary blend films. This photoactive layer is sandwiched between an indium tin oxide (ITO/poly(3,4-ethylenedioxythiophene:poly(styrene sulfonate (PEDOT/PSS photoanode and a bathocuproine (BCP/aluminium photocathode. The thin films have been characterized by atomic force microscope (AFM and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the morphological and optical properties of the photoactive layer. We have also compared the characteristics of three different organic solar cells: ITO/PEDOT:PSS/CuPc0.5:C600.5/BCP/Al and ITO/PEDOT:PSS/P3HT0.3:CuPc0.3:C600.4/BCP/Al with and without annealing. Both structures show good photovoltaic behaviour. Indeed, the incorporation of P3HT into CuPc:C60 thin film improves all the photovoltaic characteristics. We have also seen that thermal annealing significantly improves the optical absorption ability and stabilizes the organic solar cells making it more robust to chemical degradation.

Investigating the Effect of Thermal Annealing Process on the Photovoltaic Performance of the Graphene-Silicon Solar Cell

Directory of Open Access Journals (Sweden)

Lifei Yang

2015-01-01

Full Text Available Graphene-silicon (Gr-Si Schottky solar cell has attracted much attention recently as promising candidate for low-cost photovoltaic application. For the fabrication of Gr-Si solar cell, the Gr film is usually transferred onto the Si substrate by wet transfer process. However, the impurities induced by this process at the graphene/silicon (Gr/Si interface, such as H2O and O2, degrade the photovoltaic performance of the Gr-Si solar cell. We found that the thermal annealing process can effectively improve the photovoltaic performance of the Gr-Si solar cell by removing these impurities at the Gr/Si interface. More interestingly, the photovoltaic performance of the Gr-Si solar cell can be improved, furthermore, when exposed to air environment after the thermal annealing process. Through investigating the characteristics of the Gr-Si solar cell and the properties of the Gr film (carrier density and sheet resistance, we point out that this phenomenon is caused by the natural doping effect of the Gr film.

Optical and thermal energy discharge from tritiated solid hydrogen

International Nuclear Information System (INIS)

Magnotta, F.; Mapoles, E.R.; Collins, G.W.; Souers, P.C.

1991-01-01

The authors are investigating mechanisms of energy storage and release in tritiated solid hydrogens, by a variety of techniques including ESR, NMR and thermal and optical emission. The nuclear decay of a triton in solid hydrogen initiates the conversion of nuclear energy into stored chemical energy by producing unpaired hydrogen atoms which are trapped within the molecular lattice. The ability to store large quantities of atoms in this manner has been demonstrated and can serve as a basis for new forms of high energy density materials. This paper presents preliminary results of a study of the optical emission from solid hydrogen containing tritium over the visible and near infrared (NIR) spectral regions. Specifically, they have studied optical emission from DT and T 2 using CCD, silicon diode and germanium diode arrays. 8 refs., 6 figs

Thermal Annealing Effect on Optical Properties of Binary TiO2-SiO2 Sol-Gel Coatings

Directory of Open Access Journals (Sweden)

Xiaodong Wang

2012-12-01

Full Text Available TiO2-SiO2 binary coatings were deposited by a sol-gel dip-coating method using tetrabutyl titanate and tetraethyl orthosilicate as precursors. The structure and chemical composition of the coatings annealed at different temperatures were analyzed by Raman spectroscopy and Fourier Transform Infrared (FTIR spectroscopy. The refractive indices of the coatings were calculated from the measured transmittance and reflectance spectra. An increase in refractive index with the high temperature thermal annealing process was observed. The Raman and FTIR results indicate that the refractive index variation is due to changes in the removal of the organic component, phase separation and the crystal structure of the binary coatings.

Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003

International Nuclear Information System (INIS)

Ashok, S.

2004-01-01

This subcontract report describes hydrogenating Si samples by different methods such as low-energy implantation, electron cyclotron resonance (ECR) plasma, and thermal diffusion. The samples were provided through NREL. The experimental work, carried out at Penn State, involved the study of hydrogen interaction with defects, trapping, migration, and formation of complexes. The principal vehicle for the latter study was ion implantation, and the intent to understand mechanisms of defect passivation and activation by hydrogen. NREL implemented a study of hydrogen passivation of impurities and defects in silicon solar cells. The work included theoretical and experimental components performed at different universities. The theoretical studies consisted of the calculation of the structure and parameters related to hydrogen diffusion and interactions of hydrogen with transition-metal impurities in silicon. Experimental studies involved measurements of hydrogen and hydrogen-impurity complexes, and diffusion properties of various species of hydrogen in Si. The experimental work at Penn State included introduction of hydrogen in a variety of PV Si by ECR plasma, low-energy ion implantation, and thermal diffusion. The specific tasks were the evaluation of hydrogen interaction with defects engineered by ion implantation; defect passivation, activation, and migration in hydrogenated Si under thermal anneal; and electrical activity of hydrogen-impurity complexes. Electrical characterization entailed I-V and C-V measurements, spreading resistance, and deep-level transient spectroscopy (DLTS)

Fast thermal annealing of implantation defects in silicon. Solid phase epitaxy and residual imperfection recovery

International Nuclear Information System (INIS)

Adekoya, O.A.

1987-06-01

Basic processes ruling the crystal reconstitution in solid phase during fast thermal annealing are studied; the role of electronic and thermodynamic effects at the interface is precised, following the implantations of a donor element (p + ), an acceptor element (B + ) and an intrinsic element (Ge + ). Then, after recrystallization, the electric role of residual point defects is shown together with the possibility of total recovery and an important electric activation of the doping [fr

Thermal annealing in neutron-irradiated tribromobenzenes

DEFF Research Database (Denmark)

Siekierska, K.E.; Halpern, A.; Maddock, A. G.

1968-01-01

in the crystals was estimated by means of the 1,2-dibromoethylene exchange technique. The results suggest that, as a consequence of nuclear events, quite a number of different reactions occur whereas the principal annealing reaction is a recombination of atomic bromine with a dibromophenyl radical....

Rapid phase segregation of P3HT:PCBM composites by thermal annealing for high-performance bulk-heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Fan, X.; Fang, G.J.; Qin, P.L.; Cheng, F.; Zhao, X.Z. [Wuhan University, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan (China)

2011-12-15

The performances of bulk-heterojunction (BHJ) solar cells are investigated for time-dependent thermal annealing with different morphology evolution scales, having special consideration for the diffusion and aggregation of fullerene derivative molecules based on blends of poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM). Meaningfully, rapid formation of dot-like and needle-like crystalline PCBM structures of a few micrometers up to 60 {mu}m in size is obtained with thermal annealing treatment from 2 to 15 min, which dynamically reflects a fast process of PCBM molecule and cluster aggregation. Upon ultrasonic-assisted processing and annealing treatment, the scale of P3HT crystals is drastically increased in view of X-ray diffraction (XRD) patterns, leading to a high hole mobility. And, the P3HT domains can be gradually converted into larger P3HT crystals approved by the decreased full width at half-maximum in the XRD patterns. Corresponding current-voltage curves are measured in quantity and we propose a model to explain the effect of the crystalline degree of P3HT domains and aggregation of PCBM molecules and clusters on the phase segregation, expressing a viewpoint towards high performance of BHJ solar cells. (orig.)

Hydrogen bonding-assisted thermal conduction in β-sheet crystals of spider silk protein

Science.gov (United States)

Zhang, Lin; Chen, Teli; Ban, Heng; Liu, Ling

2014-06-01

Using atomistic simulations, we demonstrate that β-sheet, an essential component of spider silk protein, has a thermal conductivity 1-2 orders of magnitude higher than that of some other protein structures reported in the literature. In contrast to several other nanostructured materials of similar bundled/layered structures (e.g. few-layer graphene and bundled carbon nanotubes), the β-sheet is found to uniquely feature enhanced thermal conductivity with an increased number of constituting units, i.e. β-strands. Phonon analysis identifies inter-β-strand hydrogen bonding as the main contributor to the intriguing phenomenon, which prominently influences the state of phonons in both low- and high-frequency regimes. A thermal resistance model further verifies the critical role of hydrogen bonding in thermal conduction through β-sheet structures.Using atomistic simulations, we demonstrate that β-sheet, an essential component of spider silk protein, has a thermal conductivity 1-2 orders of magnitude higher than that of some other protein structures reported in the literature. In contrast to several other nanostructured materials of similar bundled/layered structures (e.g. few-layer graphene and bundled carbon nanotubes), the β-sheet is found to uniquely feature enhanced thermal conductivity with an increased number of constituting units, i.e. β-strands. Phonon analysis identifies inter-β-strand hydrogen bonding as the main contributor to the intriguing phenomenon, which prominently influences the state of phonons in both low- and high-frequency regimes. A thermal resistance model further verifies the critical role of hydrogen bonding in thermal conduction through β-sheet structures. Electronic supplementary information (ESI) available: Structure of the β-sheets, computational model, determination of area and temperature gradient, and additional phonon DOS results. See DOI: 10.1039/c4nr01195c

Formation of oxygen related donors in step-annealed CZ–silicon

Indian Academy of Sciences (India)

The effect of step-annealing necessitated by the difficulties being faced in the long duration annealing treatments to be given to CZ–silicon has been studied. One pre-anneal of 10 h followed by annealing of 10 h causes a decrease in the absorption coefficient for carbon (c). Oxygen and carbon both accelerate thermal ...

Plasma thermal conversion of bio-oil for hydrogen production

International Nuclear Information System (INIS)

Guenadou, David; Lorcet, Helene; Peybernes, Jean; Catoire, Laurent; Osmont, Antoine; Gokalp, Iskender

2012-01-01

Numerous processes exist or are proposed for the energetic conversion of biomass. The use of thermal plasma is proposed in the frame of the GALACSY project for the conversion of bio-oil to hydrogen and carbon monoxide. For this purpose, an experimental apparatus has been built. The feasibility of this conversion at very high temperature, as encountered in thermal plasma, is examined both experimentally and numerically. This zero dimensional study tends to show that a high temperature (around 2500 K or above) is needed to ensure a high yield of hydrogen (about 50 mol%) and about 95 mol% of CO+H 2 . Predicted CO+H 2 yield and CO/H 2 ratio are consistent with measurements. It is also expected that the formation of particles and tars is hampered. Thermodynamic data of selected bio-oil components are provided in the CHEMKINNASA format. (authors)

Implantation annealing in GaAs by incoherent light

International Nuclear Information System (INIS)

Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

1983-01-01

Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

Si diffusion in compositional disordering of Si-implanted GaAs/AlGaAs superlattices induced by rapid thermal annealing

International Nuclear Information System (INIS)

Uematsu, Masashi; Yanagawa, Fumihiko

1988-01-01

The Si diffusion in Si-implanted GaAs/Al 0.5 Ga 0.5 As superlattices intermixed in the disrodering process induced by rapid thermal annealing (RTA), is investigated by means of secondary ion mass spectroscopy (SIMS). The SIMS profiles indicate that no fast Si diffusion occurs during the disordering, and the disordering occurs when the Si concentration exceeds 1 x 10 19 cm -3 , which is about three times larger than the threshold value for the disordering by furnace annealing (FA). The number of Si atoms which are allowed to pass through the heterointerface is considered to be essential for disordering. (author)

Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers

International Nuclear Information System (INIS)

Hoechbauer, T.; Misra, A.; Nastasi, M.; Henttinen, K.; Suni, T.; Suni, I.; Lau, S.S.; Ensinger, W.

2004-01-01

Hydrogen ion-implantation into Si and subsequent heat treatment has been shown to be an effective means of cleaving thin layer of Si from its parent wafer. This process has been called Smart Cut TM or ion-cut. We investigated the cleavage process in H-implanted silicon samples, in which the ion-cut was provoked thermally and mechanically, respectively. A oriented p-type silicon wafer was irradiated at room temperature with 100 keV H 2 + -ions to a dose of 5 x 10 16 H 2 /cm 2 and subsequently joined to a handle wafer. Ion-cutting was achieved by two different methods: (1) thermally by annealing to 350 deg. C and (2) mechanically by insertion of a razor blade sidewise into the bonded wafers near the bond interface. The H-concentration and the crystal damage depth profiles before and after the ion-cut were investigated through the combined use of elastic recoil detection analysis and Rutherford backscattering spectroscopy (RBS). The location at which the ion-cut occurred was determined by RBS in channeling mode and cross-section transmission electron spectroscopy. The ion-cut depth was found to be independent on the cutting method. The gained knowledge was correlated to the depth distribution of the H-platelet density in the as-implanted sample, which contains two separate peaks in the implantation zone. The obtained results suggest that the ion-cut location coincides with the depth of the H-platelet density peak located at a larger depth

Hydrogenation of passivated contacts

Energy Technology Data Exchange (ETDEWEB)

Nemeth, William; Yuan, Hao-Chih; LaSalvia, Vincenzo; Stradins, Pauls; Page, Matthew R.

2018-03-06

Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.

Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

Effect of thermal annealing on scintillation properties of Ce:Gd{sub 2}Y{sub 1}Ga{sub 2.7}Al{sub 2.3}O{sub 12} under different atmosphere

Energy Technology Data Exchange (ETDEWEB)

Wang, Chao; Ding, Dongzhou; Wu, Yuntao; Li, Huanying; Chen, Xiaofeng; Shi, Jian; Wang, Qingqing; Ye, Le; Ren, Guohao [Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai (China)

2017-05-15

Cerium-doped 1% Ce:Gd{sub 2}Y{sub 1}Ga{sub 2.7}Al{sub 2.3}O{sub 12}(GYGAG) single crystal samples grown via Czochralski method were annealed under air, O{sub 2} and N{sub 2} atmospheres from 350 to 1400 C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra were performed comparatively on ''as-grown'' and thermally annealed samples. It was found that the luminescence efficiency after annealing in air and O{sub 2} was significantly enhanced compared to the non-annealed samples and this phenomenon was suggested to be caused by the existence of some oxygen vacancies in the Ce:GYGAG crystals. And the oxygen vacancies in the as-grown GYGAG crystals can be effectively eliminated by means of annealing in O{sub 2} containing atmosphere without changing the luminescence mechanism. From the TSL curves before and after annealing, three traps within 77-650 K were found to be related to oxygen vacancies. (orig.)

Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

Science.gov (United States)

Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

2017-04-01

The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

Toward understanding dynamic annealing processes in irradiated ceramics

Energy Technology Data Exchange (ETDEWEB)

Myers, Michael Thomas [Texas A & M Univ., College Station, TX (United States)

2013-05-01

High energy particle irradiation inevitably generates defects in solids. The ballistic formation and thermalization of the defect creation process occur rapidly, and are believed to be reasonably well understood. However, knowledge of the evolution of defects after damage cascade thermalization, referred to as dynamic annealing, is quite limited. Unraveling the mechanisms associated with dynamic annealing is crucial since such processes play an important role in the formation of stable postirradiation disorder in ion-beam-processing of semiconductors, and determines the “radiation tolerance” of many nuclear materials. The purpose of this dissertation is to further our understanding of the processes involved in dynamic annealing. In order to achieve this, two main tasks are undertaken.

Application of annealing for extension of WWER vessel lives

International Nuclear Information System (INIS)

Badanin, V.; Dragunow, Yu.G.; Fedorov, V.; Gorynin, I.; Nickolaev, V.

1992-01-01

The safe operation of nuclear power plants (NPP) is dependent upon the assurance that the reactor pressure vessel will not fail in a brittle manner when the effects of radiation embrittlement are taken into account. The recovery of the properties of the irradiated materials is an important way of extending the operating life of a reactor vessel. The intent of this paper is to demonstrate the efficiency of thermal annealing for the recovery of reactor vessel material properties and to present the implications for extended service life. In order to substantiate the application of annealing to the extensior of the service life of vessels, detailed investigations were conducted which involved thermal annealing temperature and time, fast neutron fluence, and metallurgical factors (i.e. impurity contents) on the recovery of properties after the annealing of irradiated materials. Similar studies were continued to determine predictive methods for radiation embrittlement after repeated annealings. In May 1987 the first pilot annealing of a commercial reactor vessel (Novo-Voronezhskaya, III, NPP) was performed. The development of the annealing equipment and investigations performed to test the annealing process proved successful, and an improved safe operation for the reactor vessel was thus atttained providing for an extended service life. (orig.)

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

Science.gov (United States)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits—A comparative study

DEFF Research Database (Denmark)

Pantleon, Karen; Somers, Marcel A. J.

2010-01-01

and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing......Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver...... kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted...

Hydrogen spillover phenomenon: Enhanced reversible hydrogen adsorption/desorption at Ta{sub 2}O{sub 5}-coated Pt electrode in acidic media

Energy Technology Data Exchange (ETDEWEB)

Sata, Shunsuke [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-G1-5 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Awad, Mohamed I.; El-Deab, Mohamed S. [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-G1-5 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Department of Chemistry, Faculty of Science, Cairo University, Cairo (Egypt); Okajima, Takeyoshi [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-G1-5 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Ohsaka, Takeo, E-mail: ohsaka@echem.titech.ac.j [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-G1-5 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

2010-04-01

The current study is concerned with the preparation and characterization of tantalum oxide-loaded Pt (TaO{sub x}/Pt) electrodes for hydrogen spillover application. XPS, SEM, EDX and XRD techniques are used to characterize the TaO{sub x}/Pt surfaces. TaO{sub x}/Pt electrodes were prepared by galvanostatic electrodeposition of Ta on Pt from LiF-NaF (60:40 mol%) molten salts containing K{sub 2}TaF{sub 7} (20 wt%) at 800 deg. C and then by annealing in air at various temperatures (200, 400 and 600 deg. C). The thus-fabricated TaO{sub x}/Pt electrodes were compared with the non-annealed Ta/Pt and the unmodified Pt electrodes for the hydrogen adsorption/desorption (H{sub ads}/H{sub des}) reaction. The oxidation of Ta to the stoichiometric oxide (Ta{sub 2}O{sub 5}) increases with increasing the annealing temperature as revealed from XPS and X-ray diffraction (XRD) measurements. The higher the annealing temperature the larger is the enhancement in the H{sub ads}/H{sub des} reaction at TaO{sub x}/Pt electrode. The extraordinary increase in the hydrogen adsorption/desorption at the electrode annealed at 600 deg. C is explained on the basis of a hydrogen spillover-reverse spillover mechanism. The hydrogen adsorption at the TaO{sub x}/Pt electrode is a diffusion-controlled process.

Evolution of interface and surface structures of ZnO/Al2 O3 multilayers upon rapid thermal annealing

Science.gov (United States)

Liu, H. H.; Chen, Q. Y.; Chang, C. F.; Hsieh, W. C.; Wadekar, P. V.; Huang, H. C.; Liao, H. H.; Seo, H. W.; Chu, W. K.

2015-03-01

ZnO ∖Al2O3 multilayers were deposited on sapphires by atomic layer deposition at 85°C. This low substrate temperature ensures good interface smoothness useful for study of interfacial reaction or interdiffusion. Our study aimed at the effects of rapid thermal annealing at different annealing temperatures, times and PAr:PO2. XRR and XRD techniques were used to investigate the kinetics from which various terms of the activation energies could be determined. HR-TEM and electron diffraction were carried out to correlate the microstructures and interfacial alignments as a result of the reactions. AFM were used to assist SEM profiling of the surface morphological evolution in association with the TEM observations.

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

International Nuclear Information System (INIS)

Schwarze, G.E.; Frasca, A.J.

1994-01-01

The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10 13 n/cm 2 and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed

Non-thermal production of pure hydrogen from biomass : HYVOLUTION

NARCIS (Netherlands)

Claassen, P.A.M.; Vrije, de G.J.

2006-01-01

HYVOLUTION is the acronym of an Integrated Project ¿Non-thermal production of pure hydrogen from biomass¿ which has been granted in the Sixth EU Framework Programme on Research, Technological Development and Demonstration, Priority 6.1.ii, Sustainable Energy Systems. The aim of HYVOLUTION:

Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP

Science.gov (United States)

Zhang, Bin; Chen, Cheng; Han, Junbo; Jin, Chuan; Chen, Jianxin; Wang, Xingjun

2018-04-01

The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation measurement. The carrier's localization and the optical spin detection efficiency increase with an increase of annealing temperature up to 600 °C. The enhancement of the spin detection efficiency is attributed to both the shortening of the electron lifetime and the prolonging of the spin lifetime as a result of the enhanced carriers' localization induced by the annealing process. Our results provided an approach to enhance spin detection efficiency of GaAsSb with its PL emission in the 1.55 μm region.

Composition dependent thermal annealing behaviour of ion tracks in apatite

Energy Technology Data Exchange (ETDEWEB)

Nadzri, A., E-mail: allina.nadzri@anu.edu.au [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Schauries, D.; Mota-Santiago, P.; Muradoglu, S. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, Planckstrasse 1, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64287 Darmstadt (Germany); Gleadow, A.J.W. [School of Earth Science, University of Melbourne, Melbourne, VIC 3010 (Australia); Hawley, A. [Australian Synchrotron, 800 Blackburn Road, Clayton, VIC 3168 (Australia); Kluth, P. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia)

2016-07-15

Natural apatite samples with different F/Cl content from a variety of geological locations (Durango, Mexico; Mud Tank, Australia; and Snarum, Norway) were irradiated with swift heavy ions to simulate fission tracks. The annealing kinetics of the resulting ion tracks was investigated using synchrotron-based small-angle X-ray scattering (SAXS) combined with ex situ annealing. The activation energies for track recrystallization were extracted and consistent with previous studies using track-etching, tracks in the chlorine-rich Snarum apatite are more resistant to annealing than in the other compositions.

Concept study of a hydrogen containment process during nuclear thermal engine ground testing

OpenAIRE

Wang, Ten-See; Stewart, Eric T.; Canabal, Francisco

2016-01-01

A new hydrogen containment process was proposed for ground testing of a nuclear thermal engine. It utilizes two thermophysical steps to contain the hydrogen exhaust. First, the decomposition of hydrogen through oxygen-rich combustion at higher temperature; second, the recombination of remaining hydrogen with radicals at low temperature. This is achieved with two unit operations: an oxygen-rich burner and a tubular heat exchanger. A computational fluid dynamics methodology was used to analyze ...

Studies of thermal annealing and dope composition on the enhancement of separation performance cellulose acetate membrane for brackish water treatment from Jepara

Directory of Open Access Journals (Sweden)

Tutuk Djoko Kusworo

2014-08-01

Full Text Available Membrane is an alternative technology of water treatment with filtration principle that is being widely developed and used for water treatment. The main objective of this study was to make an asymmetric membrane using cellulose acetate polymer and study the effect of additive and annealing treatment on the morphology structure and performance of cellulose acetate membranes in brackish water treatment. Asymmetric membranes for brackish water treatment were casted using a casting machine process from dope solutions containing cellulose acetates and acetone as a solvent. Membranes was prepared by phase inversion method  with variation of polyethylene glycol (PEG concentration of 1 and 5 wt% and with thermal annealing at 60 oC in 10 seconds and without thermal annealing behavior. Membrane characterization consists of calculation of membrane flux and rejection with brackish water as a feed from Jepara. The research concluded that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion method. The more added concentration of PEG will be resulted the larger pore of membrane. Meanwhile the higher temperature and the longer time of annealing treatment, the skin layer of membrane become denser. Membrane with the composition of 18 wt% cellulose acetate, 5 wt% PEG, 1 wt% distilled water, with heat treatment at temperature of 60 oC for 10 seconds is obtained optimal performance.

Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits-A comparative study

International Nuclear Information System (INIS)

Pantleon, Karen; Somers, Marcel A.J.

2010-01-01

Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted to be interpreted in terms of recovery, recrystallization and grain growth.

Thermal Annealing Effect on Structural, Morphological, and Sensor Performance of PANI-Ag-Fe Based Electrochemical E. coli Sensor for Environmental Monitoring

Directory of Open Access Journals (Sweden)

Norshafadzila Mohammad Naim

2015-01-01

Full Text Available PANI-Ag-Fe nanocomposite thin films based electrochemical E. coli sensor was developed with thermal annealing. PANI-Ag-Fe nanocomposite thin films were prepared by oxidative polymerization of aniline and the reduction process of Ag-Fe bimetallic compound with the presence of nitric acid and PVA. The films were deposited on glass substrate using spin-coating technique before they were annealed at 300°C. The films were characterized using XRD, UV-Vis spectroscopy, and FESEM to study the structural and morphological properties. The electrochemical sensor performance was conducted using I-V measurement electrochemical impedance spectroscopy (EIS. The sensitivity upon the presence of E. coli was measured in clean water and E. coli solution. From XRD analysis, the crystallite sizes were found to become larger for the samples after annealing. UV-Vis absorption bands for samples before and after annealing show maximum absorbance peaks at around 422 nm–424 nm and 426 nm–464 nm, respectively. FESEM images show the diameter size for nanospherical Ag-Fe alloy particles increases after annealing. The sensor performance of PANI-Ag-Fe nanocomposite thin films upon E. coli cells in liquid medium indicates the sensitivity increases after annealing.

Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal

International Nuclear Information System (INIS)

Goh, K. E. J.; Augarten, Y.; Oberbeck, L.; Simmons, M. Y.

2008-01-01

We address the use of rapid thermal anneal (RTA) to enhance electron mobility and phase coherent transport in Si:P δ-doped devices encapsulated by low temperature Si molecular beam epitaxy while minimizing dopant diffusion. RTA temperatures of 500-700 deg. C were applied to δ-doped layers encapsulated at 250 deg. C. From 4.2 K magnetotransport measurements, we find that the improved crystal quality after RTA increases the mobility/mean free path by ∼40% and the phase coherence length by ∼25%. Our results suggest that the initial capping layer has near optimal crystal quality and transport improvement achieved by a RTA is limited

Two-dimensional thermal analysis of liquid hydrogen tank insulation

Energy Technology Data Exchange (ETDEWEB)

Babac, Gulru; Sisman, Altug [Istanbul Technical University, Energy Institute, Ayazaga campus, 34469 Maslak, Istanbul (Turkey); Cimen, Tolga [Jaguar and Landrover, Banbury Road, Gaydon, Warwick CV35 0RR (United Kingdom)

2009-08-15

Liquid hydrogen (LH{sub 2}) storage has the advantage of high volumetric energy density, while boil-off losses constitute a major disadvantage. To minimize the losses, complicated insulation techniques are necessary. In general, Multi Layer Insulation (MLI) and a Vapor-Cooled Shield (VCS) are used together in LH{sub 2} tanks. In the design of an LH{sub 2} tank with VCS, the main goal is to find the optimum location for the VCS in order to minimize heat leakage. In this study, a 2D thermal model is developed by considering the temperature dependencies of the thermal conductivity and heat capacity of hydrogen gas. The developed model is used to analyze the effects of model considerations on heat leakage predictions. Furthermore, heat leakage in insulation of LH{sub 2} tanks with single and double VCS is analyzed for an automobile application, and the optimum locations of the VCS for minimization of heat leakage are determined for both cases. (author)

Ultrapure hydrogen thermal compressor based on metal hydrides for fuel cells and hybrid vehicles

International Nuclear Information System (INIS)

Almasan, V.; Biris, A.; Coldea, I.; Lupu, D.; Misan, I.; Popeneciu, G.; Ardelean, O.

2007-01-01

Full text: In hydrogen economy, efficient compressors are indispensable elements in the storage, transport and distribution of the produced hydrogen. Energetic efficient technologies can contribute to H 2 pipelines transport to the point of use and to distribute H 2 by refuelling stations. Characteristic for metal hydrides systems is the wide area of possibilities to absorb hydrogen at low pressure from any source of hydrogen, to store and deliver it hydrogen at high pressure (compression ratio more than 30). On the basis of innovative concepts and advanced materials for H 2 storage/compression (and fast thermal transfer), a fast mass (H 2 ) and heat transfer unit will be developed suitable to be integrated in a 3 stage thermal compressor. Metal hydrides used for a three stage hydrogen compression system must have different equilibrium pressures, namely: for stage 1, low pressure H 2 absorption and resistant to poisoning with impurities of hydrogen, for stage 2, medium pressure H 2 absorption and for stage 3, high pressure hydrogen delivery (120 bar). In the case of compression device based on metallic hydrides the most important properties are the hydrogen absorption/desorption rate, a smaller process enthalpy and a great structural stability on long term hydrogen absorption/desorption cycling. These properties require metal hydrides with large differences between the hydrogen absorption and desorption pressures at equilibrium, within a rather small temperature range. The main goal of this work is to search and develop metal hydride integrated systems for hydrogen purification, storage and compression. After a careful screening three hydrogen absorbing alloys will be selected. After selection, the work up of the alloys composition on the bases of detailed solid state studies, new multi-component alloys will be developed, with suitable thermodynamic and kinetic properties for a hydrogen compressor. The results of the study are the following: new types of hydrogen

Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

Directory of Open Access Journals (Sweden)

Hao Wu

2016-08-01

Full Text Available The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4 ns at 10 (300 K, which was more than two (four times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

Thermal balance of a four stroke SI engine operating on hydrogen as a supplementary fuel

International Nuclear Information System (INIS)

Yueksel, F.; Ceviz, M.A.

2003-01-01

This paper investigates the effects of adding constant quantity hydrogen to gasoline-air mixture on SI engine thermal balance and performance. A four stroke, four-cylinder SI engine was used for conducting this study. Thermal balance tests were conducted for engine thermal efficiency, heat loss through the exhaust gases, heat loss to the cooling water and unaccounted losses (i.e. heat lost by lubricating oil, radiation), while performance tests were in respect to the brake power, specific fuel consumption and air ratio. Hydrogen supplementations were used with three different and fixed mass flow rates; 0.129, 0.168 and 0.208 kg h -1 at near three-fourth throttle opening position and variable engine speed ranging from 1000 to 4500 rpm. The results showed that supplementation of hydrogen to gasoline decreases the heat loss to cooling water and unaccounted losses, and the heat loss through the exhaust gas is nearly the same with pure gasoline experiments. Additionally, specific fuel consumption decreases, while the engine thermal efficiency and the air ratio increase. Engine performance parameters such as thermal efficiency and specific fuel consumption improved the level of the ratio of hydrogen mass flow rate to that of gasoline up to 5%

Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals

Directory of Open Access Journals (Sweden)

J. Bornacelli

2014-01-01

Full Text Available Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs have become the main building block of silicon photonic (modulators, waveguide, source, and detectors. In this work, we present an approach based on implantation of Ag (or Au ions and a proper thermal annealing in order to improve the photoluminescence (PL emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface. Once Si-NCs are formed inside the SiO2 we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.

Room-temperature ferromagnetism in hydrogenated ZnO nanoparticles

Science.gov (United States)

Xue, Xudong; Liu, Liangliang; Wang, Zhu; Wu, Yichu

2014-01-01

The effect of hydrogen doping on the magnetic properties of ZnO nanoparticles was investigated. Hydrogen was incorporated by annealing under 5% H2 in Ar ambient at 700 °C. Room-temperature ferromagnetism was induced in hydrogenated ZnO nanoparticles, and the observed ferromagnetism could be switched between "on" and "off" states through hydrogen annealing and oxygen annealing process, respectively. It was found that Zn vacancy and OH bonding complex (VZn + OH) was crucial to the observed ferromagnetism by using the X-ray photoelectron spectroscopy and positron annihilation spectroscopy analysis. Based on first-principles calculations, VZn + OH was favorable to be presented due to the low formation energy. Meanwhile, this configuration could lead to a magnetic moment of 0.57 μB. The Raman and photoluminescence measurements excluded the possibility of oxygen vacancy as the origin of the ferromagnetism.

Evolution of microstructure at hot band annealing of ferritic FeSi steels

Energy Technology Data Exchange (ETDEWEB)

Schneider, Jürgen, E-mail: juergen.schneider@t-online.de [Institute of Metal Forming, Technische Universität Bergakademie Freiberg, Bernhard-von Cotta-Str. 4, D-09596 Freiberg (Germany); Stahlzentrum Freiberg e.V., Leipziger Straße 34, D-09599 Freiberg (Germany); Li, Guangqiang [State Key Lab. of Refractories and Metallurgy, Wuhan University of Science and Technology, No. 947 Heping Avenue, Qingshan District, Wuhan 430081 (China); Franke, Armin [Stahlzentrum Freiberg e.V., Leipziger Straße 34, D-09599 Freiberg (Germany); Zhou, Bowen [State Key Lab. of Refractories and Metallurgy, Wuhan University of Science and Technology, No. 947 Heping Avenue, Qingshan District, Wuhan 430081 (China)

2017-02-15

The magnetic properties of the finally fabricated nonoriented FeSi steels critically depend on the microstructure and on the occurring crystallographic texture. The fabrication route comprises hot rolling, coiling and cooling, hot band annealing before cold rolling (optional), cold rolling and the final thermal treatment. As well known there is an interplay between the microstructure and texture during the various processing steps. For that reason, it is of interest to know more on the evolution of the microstructure at hot band annealing of hot band prepared in different ways. In this paper we will summarize our recent results on the evolution of microstructure during thermal annealing of hot band: thermal treatment following immediately the last pass of hot rolling or a hot band annealing as a separate processing step before cold rolling.

Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

International Nuclear Information System (INIS)

Mtangi, W.; Auret, F.D.; Chawanda, A.; Janse van Rensburg, P.J.; Coelho, S.M.M.; Nel, J.M.; Diale, M.; Schalkwyk, L. van; Nyamhere, C.

2012-01-01

Highlights: ► Highly rectifying Pd/ZnO contacts have been fabricated. ► The rectification behaviour decrease with annealing temperature. ► The surface donor concentration increases with increase in annealing temperature. ► The depletion layer width at a specific reverse voltage decreases with increase in annealing temperature. - Abstract: Current–voltage (IV) and capacitance–voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at −1.5 V. An average barrier height of (0.77 ± 0.02) eV has been calculated by assuming pure thermionic emission for the as-deposited material and as (0.56 ± 0.03) eV after annealing at 550 °C. The reverse current has been measured as (2.10 ± 0.01) × 10 −10 A for the as-deposited and increases by 5 orders of magnitude after annealing at 550 °C to (1.56 ± 0.01) × 10 −5 A. The depletion layer width measured at −2.0 V has shown a strong dependence on thermal annealing as it decreases from 1.09 μm after annealing at 200 °C to 0.24 μm after annealing at 500 °C, resulting in the modification of the dopant concentration within the depletion region and hence the current flowing through the interface from pure thermionic emission to thermionic field emission with the donor concentrations increasing from 6.90 × 10 15 cm −3 at 200 °C to 6.06 × 10 16 cm −3 after annealing at 550 °C. This increase in the volume concentration has been explained as an effect of a conductive channel that shifts closer to the surface after sample annealing. The series resistance has been observed to decrease with increase in annealing temperature. The Pd contacts have shown high stability up to an annealing temperature of 250 °C as revealed by the IV

Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

Energy Technology Data Exchange (ETDEWEB)

Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Auret, F.D.; Chawanda, A.; Janse van Rensburg, P.J.; Coelho, S.M.M.; Nel, J.M.; Diale, M.; Schalkwyk, L. van [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Nyamhere, C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

2012-02-15

Highlights: Black-Right-Pointing-Pointer Highly rectifying Pd/ZnO contacts have been fabricated. Black-Right-Pointing-Pointer The rectification behaviour decrease with annealing temperature. Black-Right-Pointing-Pointer The surface donor concentration increases with increase in annealing temperature. Black-Right-Pointing-Pointer The depletion layer width at a specific reverse voltage decreases with increase in annealing temperature. - Abstract: Current-voltage (IV) and capacitance-voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at -1.5 V. An average barrier height of (0.77 {+-} 0.02) eV has been calculated by assuming pure thermionic emission for the as-deposited material and as (0.56 {+-} 0.03) eV after annealing at 550 Degree-Sign C. The reverse current has been measured as (2.10 {+-} 0.01) Multiplication-Sign 10{sup -10} A for the as-deposited and increases by 5 orders of magnitude after annealing at 550 Degree-Sign C to (1.56 {+-} 0.01) Multiplication-Sign 10{sup -5} A. The depletion layer width measured at -2.0 V has shown a strong dependence on thermal annealing as it decreases from 1.09 {mu}m after annealing at 200 Degree-Sign C to 0.24 {mu}m after annealing at 500 Degree-Sign C, resulting in the modification of the dopant concentration within the depletion region and hence the current flowing through the interface from pure thermionic emission to thermionic field emission with the donor concentrations increasing from 6.90 Multiplication-Sign 10{sup 15} cm{sup -3} at 200 Degree-Sign C to 6.06 Multiplication-Sign 10{sup 16} cm{sup -3} after annealing at 550 Degree-Sign C. This increase in the volume concentration has been explained as an effect of a conductive channel

Hydrogen pickup and redistribution in alpha-annealed Zircaloy-4

International Nuclear Information System (INIS)

Kammenzind, B.F.; Franklin, D.G.; Duffin, W.J.; Peters, H.R.

1996-01-01

Zircaloy-4, which is widely used as a core structural material in Pressurized-Water Reactors (PWR), picks up hydrogen during service. Hydrogen solubility in Zircaloy-4 is low and hydrides precipitate after the Zircaloy-4 matrix becomes supersaturated with hydrogen. These hydrides embrittle the Zircaloy-4. To study hydrogen pickup and concentration, a postirradiation nondestructive radiographic technique for measuring hydrogen concentration was developed and qualified. Experiments on hydrogen pickup were conducted in the Advanced Test Reactor (ATR). Ex-reactor tests were conducted to determine the conditions for which hydrogen would dissolve, migrate, and precipitate. Finally, a phenomenological model for hydrogen diffusion was indexed to the data. This presentation describes the equipment and the model, presents the results of experiments, and compares the model predictions to experimental results

Friction force microscopy study of annealed diamond-like carbon film

International Nuclear Information System (INIS)

Choi, Won Seok; Joung, Yeun-Ho; Heo, Jinhee; Hong, Byungyou

2012-01-01

In this paper we introduce mechanical and structural characteristics of diamond-like carbon (DLC) films which were prepared on silicon substrates by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method using methane (CH 4 ) and hydrogen (H 2 ) gas. The films were annealed at various temperatures ranging from 300 to 900 °C in steps of 200 °C using rapid thermal processor (RTP) in nitrogen ambient. Tribological properties of the DLC films were investigated by atomic force microscopy (AFM) in friction force microscopy (FFM) mode. The structural properties of the films were obtained by high resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The wettability of the films was obtained using contact angle measurement. XPS analysis showed that the sp 3 content is decreased from 75.2% to 24.1% while the sp 2 content is increased from 24.8% to 75.9% when the temperature is changed from 300 to 900 °C. The contact angles of DLC films were higher than 70°. The FFM measurement results show that the highest friction coefficient value was achieved at 900 °C annealing temperature.

Friction force microscopy study of annealed diamond-like carbon film

Energy Technology Data Exchange (ETDEWEB)

Choi, Won Seok; Joung, Yeun-Ho [School of Electrical Engineering, Hanbat National University, Daejeon 305-719 (Korea, Republic of); Heo, Jinhee [Materials Safety Evaluation Group, Korea Institute of Materials Science, Changwon 641-831 (Korea, Republic of); Hong, Byungyou, E-mail: byhong@skku.edu [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2012-10-15

In this paper we introduce mechanical and structural characteristics of diamond-like carbon (DLC) films which were prepared on silicon substrates by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method using methane (CH{sub 4}) and hydrogen (H{sub 2}) gas. The films were annealed at various temperatures ranging from 300 to 900 °C in steps of 200 °C using rapid thermal processor (RTP) in nitrogen ambient. Tribological properties of the DLC films were investigated by atomic force microscopy (AFM) in friction force microscopy (FFM) mode. The structural properties of the films were obtained by high resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The wettability of the films was obtained using contact angle measurement. XPS analysis showed that the sp{sup 3} content is decreased from 75.2% to 24.1% while the sp{sup 2} content is increased from 24.8% to 75.9% when the temperature is changed from 300 to 900 °C. The contact angles of DLC films were higher than 70°. The FFM measurement results show that the highest friction coefficient value was achieved at 900 °C annealing temperature.

Luminescence lifetimes in quartz: dependence on annealing temperature prior to beta irradiation

International Nuclear Information System (INIS)

Galloway, R.B.

2002-01-01

It is well known that the thermal history of a quartz sample influences the optically stimulated luminescence sensitivity of the quartz. It is found that the optically stimulated luminescence lifetime, determined from time resolved spectra obtained with pulsed stimulation, also depends on past thermal treatment. For samples at 20 deg. C during stimulation, the lifetime depends on beta dose and on duration of preheating at 220 deg. C prior to stimulation for quartz annealed at 600 deg. C and above, but is independent of these factors for quartz annealed at 500 deg. C and below. For stimulation at higher temperatures, the lifetime becomes shorter if the sample is held at temperatures above 125 deg. C during stimulation, in a manner consistent with thermal quenching. A single exponential decay is all that is required to fit the time resolved spectra for un-annealed quartz regardless of the temperature during stimulation (20-175 deg. C), or to fit the time resolved spectra from all samples held at 20 deg. C during stimulation, regardless of annealing temperature (20-1000 deg. C). An additional shorter lifetime is found for some combinations of annealing temperature and temperature during stimulation. The results are discussed in terms of a model previously used to explain thermal sensitisation. The luminescence lifetime data are best explained by the presence of two principal luminescence centres, their relative importance depending on the annealing temperature, with a third centre involved for limited combinations of annealing temperature and temperature during stimulation

Study of photoluminescence from annealed bulk-ZnO single crystals

Energy Technology Data Exchange (ETDEWEB)

Yoneta, M.; Ohishi, M.; Saito, H. [Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Yoshino, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Honda, M. [Faculty of Science, Naruto University of Education, 748 Nakajima, Takashima, Naruto-cho, Naruto-shi 772-8502 (Japan)

2006-03-15

We have investigated the influence of rapid thermal annealing on the photoluminescence of bulk-ZnO single crystal. As-grown ZnO wafer, illuminated by 325 nm ultraviolet light at 4.2 K, emitted the visible luminescence of pale green centered of 2.29 eV. The luminescence was observed by the anneal at the temperature range between 400 C and 1000 C, however, its intensity decreased with anneal temperature. The free-exciton and the 2.18 eV emission line were obtained by the anneal at 1200 C for 60 sec. From the X-ray diffraction and the surface morphology measurements, the improvement of the crystallinity of bulk-ZnO crystal were confirmed. We suggest that a rapid thermal annealing technique is convenience to improve the the quality of bul-ZnO single crystals. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

International Nuclear Information System (INIS)

Shu, G W; Wu, P F; Liu, Y W; Wang, J S; Shen, J L; Lin, T Y; Pong, P J; Chi, G C; Chang, H J; Chen, Y F; Lee, Y C

2006-01-01

We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)

Hydrogen and helium in metals: positron lifetime experiments. Quarterly report 3. quarter 1987

International Nuclear Information System (INIS)

Rajainmaeki, Hannu.

1987-09-01

This thesis reviews a new approach to studying the role of hydrogen and helium in defect recovery of metals by the positron lifetime technique. A cryostat has been built at the University of Jyvaeskylae for irradiating and/or implaning solids by high-energy proton or helium beams from the MC-20 cyclotron. The samples can be kept continuously below 20 K and the isochronal annealings and the subsequent positron lifetime measurements are carried ou in the same cryostat after the irradiations. During the implantations below 20 K both impuities (H or He) and Frenkel pairs are produced simultaneously. By measuring positron lifetimes during the annealing detailed information is obtained about radiation damage, impurity-defect interactions, lattice defect annealing, void nucleation and formation of helium bubbles. In this work positron lifetime spectroscopy has been utilized for the first time to study defect recovery below the liquid nitrogen temperature (77 K). The annealing stages are investigated in aluminium, nickel and molybdenum in the temperature range 20-700 K. Hydrogen is found to get trapped at vacancies in all the studied metals with binding energies 0.53+-0.04 and 1.6+-0.1 eV, respectively. Trapped hydrogen retards the vacancy migration in Al and Mo, while H-vancancy pairs dissociate in Ni below the free vacancy migration stage. helium gets deeply trapped at vacancies in Al and migrates substitutionally with the activation energy of 1.3+-0.1 eV. Helium-vacancy pairs are observed to nucleate into clusters and form helium bubbles which are stable up to the Al melting temperature. The growth mechanisms for the bubbles are established as thermal vacancy absorption and bubble migration/coalescence

Numerical analysis on effect of annealing mc-Si ingot grown by DS process for PV application

Science.gov (United States)

Aravindan, G.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

2017-10-01

Silicon solar cells play a crucial role in Photo voltaic (PV) application. We have numerically investigated thermal stress and normal stress components (Sigma 11, Sigma 22, Sigma 33 and sigma 12) by using finite volume method. The maximum thermal stress has low value at the centre region for 900 K and 700 K annealing temperatures comparing all the cases. The maximum thermal stress at peripheral region is low for 700 K annealing compared to 900 K annealing. The annealing effect of mc-Si ingot normal stress components is discussed. At 700 K annealing temperature the normal stress in 11 and 33 direction has lower maximum and at the 900 K annealing temperature the normal stress in 22 and 12 direction has lower maximum.

High-temperature annealing of graphite: A molecular dynamics study

Science.gov (United States)

Petersen, Andrew; Gillette, Victor

2018-05-01

A modified AIREBO potential was developed to simulate the effects of thermal annealing on the structure and physical properties of damaged graphite. AIREBO parameter modifications were made to reproduce Density Functional Theory interstitial results. These changes to the potential resulted in high-temperature annealing of the model, as measured by stored-energy reduction. These results show some resemblance to experimental high-temperature annealing results, and show promise that annealing effects in graphite are accessible with molecular dynamics and reactive potentials.

Irradiation embrittlement and optimisation of annealing

International Nuclear Information System (INIS)

1993-01-01

This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects

Irradiation embrittlement and optimisation of annealing

Energy Technology Data Exchange (ETDEWEB)

NONE

1994-12-31

This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

International Nuclear Information System (INIS)

Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

2015-01-01

Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films

Science.gov (United States)

Vaghayenegar, M.; Jacobs, R. N.; Benson, J. D.; Stoltz, A. J.; Almeida, L. A.; Smith, David J.

2017-08-01

This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation analysis for as-grown and thermal cycle-annealed samples has been carried out using bright-field transmission electron microscopy. Triangular pits present in as-grown material are associated with a mixture of Frank partials and perfect dislocations, while pits with fish-eye shapes have perfect dislocations with 1/2[0\\bar{1}1] Burgers vector. The dislocations beneath skew pits are more complex as they have two different crystallographic directions, and are associated with a mixture of Shockley partials and perfect dislocations. Dislocation analysis of samples after thermal cycle annealing (TCA) shows that the majority of dislocations under the etch pits are short segments of perfect dislocations with 1/2[0\\bar{1}1] Burgers vector while the remainder are Shockley partials. The absence of fish-eye shape pits in TCA samples suggests that they are associated with mobile dislocations that have reacted during annealing, causing the overall etch pit density to be reduced. Very large pits with a density ˜2×103 cm-2 are observed in as-grown and TCA samples. These defects thread from within the CdTe buffer layer into the upper regions of the HgCdTe layers. Their depth in as-grown material is so large that it is not possible to locate and identify the underlying defects.

SERS activity of Ag decorated nanodiamond and nano-β-SiC, diamond-like-carbon and thermally annealed diamond thin film surfaces.

Science.gov (United States)

Kuntumalla, Mohan Kumar; Srikanth, Vadali Venkata Satya Siva; Ravulapalli, Satyavathi; Gangadharini, Upender; Ojha, Harish; Desai, Narayana Rao; Bansal, Chandrahas

2015-09-07

In the recent past surface enhanced Raman scattering (SERS) based bio-sensing has gained prominence owing to the simplicity and efficiency of the SERS technique. Dedicated and continuous research efforts have been made to develop SERS substrates that are not only stable, durable and reproducible but also facilitate real-time bio-sensing. In this context diamond, β-SiC and diamond-like-carbon (DLC) and other related thin films have been promoted as excellent candidates for bio-technological applications including real time bio-sensing. In this work, SERS activities of nanodiamond, nano-β-SiC, DLC, thermally annealed diamond thin film surfaces were examined. DLC and thermally annealed diamond thin films were found to show SERS activity without any metal nanostructures on their surfaces. The observed SERS activities of the considered surfaces are explained in terms of the electromagnetic enhancement mechanism and charge transfer resonance process.

Pulsed Q-switched ruby laser annealing of Bi implanted Si crystals investigated by channeling

International Nuclear Information System (INIS)

Deutch, B.I.; Shih-Chang, T.; Shang-Hwai, L.; Zu-Yao, Z.; Jia-Zeng, H.; Ren-Zhi, D.; Te-Chang, C.; De-Xin, C.

1979-01-01

Channeling was used to investigate pulsed, Q switched ruby-laser annealed and thermally annealed Si single crystals implanted with 40-keV Bi ions to a dose of 10 15 atoms/cm 2 . After thermal annealing, residual damage decreased with increasing annealing temperature to a minimum value of 30% at 900 0 C. The Bi atoms in substitutional sites reached a maximum value (50%) after annealing at 750 0 C but decreased with increasing annealing temperature. Out diffusion of Bi atoms occurred at temperatures higher than 625 0 C. For comparison, the residual damage disappeared almost completely after pulsed-laser annealing (30 ns pulse width, Energy, E = 3J/cm 2 ). The concentration of Bi in Si exceeded its solid solubility by an order of magnitude; 95% of Bi atoms were annealed to substitutional sites. Laser pulses of different energies were used to investigate the efficiency of annealing. (author)

Thermal neutron pulsed parameters in non-hydrogenous systems. Experiment for lead grains

International Nuclear Information System (INIS)

Drozdowicz, K.; Gabanska, B.; Kosik, M.; Krynicka, E.; Woznicka, U.; Zaleski, T.

1997-01-01

In Czubek's method of measurement of the thermal neutron macroscopic absorption cross section a two-region geometry is applied where the investigated sample is surrounded by an external moderator. Both regions in the measurements made up till now were hydrogenous, which means the same type of the thermal neutron transport properties. In the paper a theoretical consideration to use non-hydrogenous materials as the samples is presented. Pulsed neutron measurements have been performed on homogeneous material in a geometry of the classic experiment with the variable geometric buckling. Two decay constants have been measured for different cylindrical samples of small lead grains (a lead shot). (author)

Facile Synthesis of Calcium Borate Nanoparticles and the Annealing Effect on Their Structure and Size

Directory of Open Access Journals (Sweden)

Manizheh Navasery

2012-11-01

Full Text Available Calcium borate nanoparticles have been synthesized by a thermal treatment method via facile co-precipitation. Differences of annealing temperature and annealing time and their effects on crystal structure, particle size, size distribution and thermal stability of nanoparticles were investigated. The formation of calcium borate compound was characterized by X-ray diffraction (XRD and Fourier Transform Infrared spectroscopy (FTIR, Transmission electron microscopy (TEM, and Thermogravimetry (TGA. The XRD patterns revealed that the co-precipitated samples annealed at 700 °C for 3 h annealing time formed an amorphous structure and the transformation into a crystalline structure only occurred after 5 h annealing time. It was found that the samples annealed at 900 °C are mostly metaborate (CaB2O4 nanoparticles and tetraborate (CaB4O7 nanoparticles only observed at 970 °C, which was confirmed by FTIR. The TEM images indicated that with increasing the annealing time and temperature, the average particle size increases. TGA analysis confirmed the thermal stability of the annealed samples at higher temperatures.

Extended defects and hydrogen interactions in ion implanted silicon

Science.gov (United States)

Rangan, Sanjay

The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (TED at low anneal temperatures (550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for

Annealing-induced Fe oxide nanostructures on GaAs

OpenAIRE

Lu, Y X; Ahmad, E; Xu, Y B; Thompson, S M

2005-01-01

We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy...

Use of superheated steam to anneal the reactor pressure vessel

International Nuclear Information System (INIS)

Porowski, J.S.

1994-01-01

Thermal annealing of an embrittled Reactor Pressure Shell is the only recognized means for recovering material properties lost due to long-term exposure of the reactor walls to radiation. Reduced toughness of the material during operation is a major concern in evaluations of structural integrity of older reactors. Extensive studies performed within programs related to life extension of nuclear plants have confirmed that the thermal treatment of 850 degrees F for 168 hours on irradiated material essentially recovers material properties lost due to neutron exposure. Dry and wet annealing methods have been considered. Wet annealing involves operating the reactor at near design temperatures and pressures. Since the temperature of wet annealing must be limited to vessel design temperature of 650 degrees F, only partial recovery of the lost properties is achieved. Thus dry annealing was selected as an alternative for future development and industrial implementation to extend the safe life of reactors

The effects of low fugacity hydrogen in duplex- and beta-annealed Ti-6Al-4V alloy

International Nuclear Information System (INIS)

Tal-Gutelmacher, E.; Eliezer, D.; Eylon, D.

2004-01-01

Due to its excellent combination of a high strength/weight ratio and good corrosion behavior, Ti-6Al-4V alloys are ranked among the most important advanced materials for a variety of aerospace, chemical engineering, biomaterials, marine and commercial applications. However, in many of these technological applications, this alloy is exposed to environments which can act as sources of hydrogen, and severe problems may arise based on its susceptibility to hydrogen embrittlement. Even small hydrogen concentrations might lead to failure. Consequently, a comprehensive knowledge of hydrogen-trapping interactions is necessary to better understand the trapping mechanisms, the types of the trap sites, the trapped hydrogen content, in order to determine the safe service conditions of this alloy in the aerospace industry. The objective of this paper is to investigate the role of microstructure on hydrogen absorption/desorption behavior in Ti-6Al-4V alloy, with specific emphasis on the nature of the interaction between microstructural traps and hydrogen atoms. The effect of low fugacity hydrogen on the microstructure is studied using X-ray diffraction (XRD), and electron microscopy (SEM and TEM), while the absorption and desorption characteristics are determined by means of a hydrogen determinator and thermal desorption spectroscopy (TDS), respectively. The role of microstructure on hydrogen absorption and desorption behavior is discussed in detail

Room-temperature ferromagnetism in hydrogenated ZnO nanoparticles

International Nuclear Information System (INIS)

Xue, Xudong; Liu, Liangliang; Wang, Zhu; Wu, Yichu

2014-01-01

The effect of hydrogen doping on the magnetic properties of ZnO nanoparticles was investigated. Hydrogen was incorporated by annealing under 5% H 2 in Ar ambient at 700 °C. Room-temperature ferromagnetism was induced in hydrogenated ZnO nanoparticles, and the observed ferromagnetism could be switched between “on” and “off” states through hydrogen annealing and oxygen annealing process, respectively. It was found that Zn vacancy and OH bonding complex (V Zn  + OH) was crucial to the observed ferromagnetism by using the X-ray photoelectron spectroscopy and positron annihilation spectroscopy analysis. Based on first-principles calculations, V Zn  + OH was favorable to be presented due to the low formation energy. Meanwhile, this configuration could lead to a magnetic moment of 0.57 μ B . The Raman and photoluminescence measurements excluded the possibility of oxygen vacancy as the origin of the ferromagnetism

Phosphorus-defect interactions during thermal annealing of ion implanted silicon

Science.gov (United States)

Keys, Patrick Henry

Ion implantation of dopant atoms into silicon generates nonequilibrium levels of crystal defects that can lead to the detrimental effects of transient enhanced diffusion (TED), incomplete dopant activation, and p-n junction leakage. In order to control these effects, it is vital to have a clear understanding of dopant-defect interactions and develop models that account for these interactions. This research focuses on experimentally investigating and modeling the clustering of phosphorus dopant atoms with silicon interstitials. Damage recovery of 40keV Si+ implants in phosphorus doped wells is experimentally analyzed. The effects of background phosphorus concentration, self implant dose, and anneal temperature are investigated. Phosphorus concentrations ranging from 2.0 x 1017 to 4.0 x 1019 cm-3 and Si+ doses ranging from 5.0 x 1013 cm-2 to 2.0 x 1014 cm-2 are studied during 650-800°C anneals. A dramatic reduction in the number of interstitials bound in {311} defects with increasing phosphorus background concentration is observed. It is suggested that the reduction of interstitials in {311} defects at high phosphorus concentrations is due to the formation of phosphorus-interstitial clusters (PICs). The critical concentration for clustering (approximately 1.0 x 1019 cm-3 at 750°C) is strongly temperature dependent and in close agreement with the kink concentration of phosphorus diffusion. Information gained from these "well experiments" is applied to the study of direct phosphorus implantation. An experimental study is conducted on 40keV phosphorus implanted to a dose of 1.0 x 1014 cm-2 during 650-800°C anneals. Electrically inactive PICs are shown to form at concentrations below the solid solubility limit due to high interstitial supersaturations. Data useful for developing a model to accurately predict phosphorus diffusion under nonequilibrium conditions are extracted from the experimental results. A cluster-mediated diffusion model is developed using the

Burst annealing of high temperature GaAs solar cells

Science.gov (United States)

Brothers, P. R.; Horne, W. E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

Burst annealing of high temperature GaAs solar cells

International Nuclear Information System (INIS)

Brothers, P.R.; Horne, W.E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

Hydration-annealing of chemical radiation damage in calcium nitrate

International Nuclear Information System (INIS)

Nair, S.M.K.; James, C.

1984-01-01

The effect of hydration on the annealing of chemical radiation damage in anhydrous calcium nitrate has been investigated. Rehydration of the anhydrous irradiated nitrate induces direct recovery of the damage. The rehydrated salt is susceptible to thermal annealing but the extent of annealing is small compared to that in the anhydrous salt. The direct recovery of damage on rehydration is due to enhanced lattice mobility. The recovery process is unimolecular. (author)

Neutralization study of boron and some metallic impurities (gold, titanium, manganese, chromium) by hydrogen implantation in monocrystal silicon

International Nuclear Information System (INIS)

Zundel, T.

1987-02-01

Boron doped silicon implanted with hydrogen at low energy in the temperature range 80-140 0 C shows a large decrease of the electrically active dopant concentration up to a depth which increases with the temperature, the implantation duration and the starting material resistivity. This effect is assigned to the formation of an electrically inactive BH complex. The hydrogen incorporation process shows a weakly temperature dependent enhanced diffusion step followed by a normal diffusion phase which may be described by a thermally activated diffusion coefficient. Heating at 80 0 C produces a complete dissociation of the BH complexes in the space charge region of reverse biased Schottky diodes. Consequently the released hydrogen drifts under the electric field and the neutralization becomes more pronounced in the bulk. Hydrogen neutralizes the gold, chromium, manganese related deep levels but has no effect on titanium related defect levels. Thermal annealing at 495 0 C of hydrogenated chromium or manganese doped samples produces four majority carriers levels which disappear at 700 0 C [fr

Thermal decay of rhodopsin: role of hydrogen bonds in thermal isomerization of 11-cis retinal in the binding site and hydrolysis of protonated Schiff base.

Science.gov (United States)

Liu, Jian; Liu, Monica Yun; Nguyen, Jennifer B; Bhagat, Aditi; Mooney, Victoria; Yan, Elsa C Y

2009-07-01

Although thermal stability of the G protein-coupled receptor rhodopsin is directly related to its extremely low dark noise level and has recently generated considerable interest, the chemistry behind the thermal decay process of rhodopsin has remained unclear. Using UV-vis spectroscopy and HPLC analysis, we have demonstrated that the thermal decay of rhodopsin involves both hydrolysis of the protonated Schiff base and thermal isomerization of 11-cis to all-trans retinal. Examining the unfolding of rhodopsin by circular dichroism spectroscopy and measuring the rate of thermal isomerization of 11-cis retinal in solution, we conclude that the observed thermal isomerization of 11-cis to all-trans retinal happens when 11-cis retinal is in the binding pocket of rhodopsin. Furthermore, we demonstrate that solvent deuterium isotope effects are involved in the thermal decay process by decreasing the rates of thermal isomerization and hydrolysis, suggesting that the rate-determining step of these processes involves breaking hydrogen bonds. These results provide insight into understanding the critical role of an extensive hydrogen-bonding network on stabilizing the inactive state of rhodopsin and contribute to our current understanding of the low dark noise level of rhodopsin, which enables this specialized protein to function as an extremely sensitive biological light detector. Because similar hydrogen-bonding networks have also been suggested by structural analysis of two other GPCRs, beta1 and beta2 adrenergic receptors, our results could reveal a general role of hydrogen bonds in facilitating GPCR function.

Visible light emission from silicon implanted and annealed SiO2layers

International Nuclear Information System (INIS)

Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Bottani, C.E.; Corni, F.; Tonini, R.; Ottaviani, G.P.

1997-01-01

Silicon implanted and annealed SiO 2 layers are studied using photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. A band centered at 560 nm is present in as-implanted samples and it is still observed after 1,000 C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1,000 C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 micros to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed

Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

Science.gov (United States)

Lee, Hyun-Woo; Cho, Won-Ju

2018-01-01

We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

Superheated steam annealing of pressurized water reactor vessel

International Nuclear Information System (INIS)

Porowski, J.S.

1993-01-01

Thermal annealing of an embrittled Reactor Pressure Shell is the only recognized means for recovering material properties lost due to long-term exposure of the reactor walls to radiation. Reduced toughness of the material during operation is a major concern in evaluations of structural integrity of older reactors. Extensive studies performed within programs related to life extension of nuclear plants have confirmed that the thermal treatment of 850 deg. F for 168 hours on irradiated material essentially recovers material properties lost due to neutron exposure. Dry and wet annealing methods have been considered. Wet annealing involves operating the reactor at near design temperatures and pressures. Since the temperature of wet annealing must be limited to vessel design temperature of 650 deg. F, only partial recovery of the lost properties is achieved. Thus dry annealing was selected as an alternative for future development and industrial implementation to extend the safe life of reactors. Dry thermal annealing consists of heating portions of the reactor vessel at a specific temperature for a given period of time using a high temperature heat source. The use of spent fuel assemblies, induction heating and resistance heating elements as well as the circulation of heated fluid were investigated as potential candidate methods. To date the use of resistance heating elements which are lowered into a dry empty reactor was considered to be the preferred method. In-depth research in the United States and practical applications of such a method in Russia have confirmed feasibility of the method. The method of using circulating superheated steam to anneal the vessel at 850 deg. F without complete removal of the reactor internals is described herein. After removing the reactor head and fuel, the core barrel along with the upper and lower core in PWRs is lifted to open an annular space between the reactor shell flange and the core barrel flange. The thermal shield can remain

DOE's annealing prototype demonstration projects

International Nuclear Information System (INIS)

Warren, J.; Nakos, J.; Rochau, G.

1997-01-01

One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable through a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy's Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana's Marble Hill nuclear power plant. The MPR team's annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company's nuclear power plant at Midland, Michigan. This paper describes the Department's annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

International Nuclear Information System (INIS)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

2014-01-01

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

Energy Technology Data Exchange (ETDEWEB)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

2014-01-20

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

Effect of rapid thermal annealing on the Mo back contact properties for Cu_2ZnSnSe_4 solar cells

International Nuclear Information System (INIS)

Placidi, Marcel; Espindola-Rodriguez, Moises; Lopez-Marino, Simon; Sanchez, Yudania; Giraldo, Sergio; Acebo, Laura; Neuschitzer, Markus; Alcobé, Xavier; Pérez-Rodríguez, Alejandro; Saucedo, Edgardo

2016-01-01

The effect of a rapid thermal process (RTP) on the molybdenum (Mo) back contact for Cu_2ZnSnSe_4 (CZTSe) solar cells is here investigated. It is shown that the annealing of the Mo layer during 5 min at 550 °C, not only improves the crystalline quality of the back contact (avoiding the absorber decomposition at this region because Mo becomes more resistant to the selenization), but also helps achieving higher crystalline quality of the absorber with bigger grains, reducing the current leakage through the heterojunction. We demonstrate that this is related to the relaxation of the compressive stress of the CZTSe absorber, when synthesized on the RTP annealed substrates. CZTSe solar cells prepared on annealed Mo films exhibited higher short circuit current densities and higher open circuit voltages, resulting in 10% and 33% higher fill factors and efficiencies. - Highlights: • An RTP annealing applied for the first time on Mo for CZTSe solar cells. • Clear improvement of the efficiency from 5.7 to 7.6% with RTP treatment. • Discussion of this improvement with adequate material/device characterizations. • Stress-induced defects responsible of the electrical leakage are revealed.

Influence of hydrogen on metals behavior. 1 - Mechanical behavior of Ti 6 pc Al 6 pc V 2 pc Sn titanium alloy versus hydrogen: influence of heat treatment and of oxygen content; Influence de l'hydrogene sur le comportement des metaux. 1 - comportement mecanique de l'alliage de titane T A6 V6 E2 vis-a-vis de l'hydrogene: influence du traitement thermique et de la teneur en oxygene

Energy Technology Data Exchange (ETDEWEB)

Schaller, Bernard

1972-06-26

The mechanical behavior of Ti 6 pc Al 6 pc V Sn alloy during dynamic testing has been investigated versus hydrogen and oxygen content. The hydrogen susceptibility depends only slightly on its microstructure, acicular or equi-axed: it depends much more on conditions of hydrogen contamination and on the thermal history afterward. When the alloy has been stabilized by annealing in {alpha} - {beta} and provided hydrogen absorption does not induce phase transformations, hydrogen sensitivity is relatively low: brittleness occurs suddenly but at a high concentration threshold (2000 ppm H), which coincides with hydrogen saturation of {beta} phase. When the alloy includes unstabilized phases, its response to hydrogen changes whether it has been finally annealed or not, in the 300 - 500 C temperature area, prone to {omega} phase formation. In the absence of such an annealing, a reduction in ductility only occurs at high concentrations (> 1500 ppm H). In the other and, after annealing at 400 C, alloy hardening and a ductility decrease start even at the lowest hydrogen amounts: then hydrogen susceptibility is very high. Low oxygen concentration (up to 2000 ppm) do not sensibly affect the good hydrogen tolerance of this alloy. Beyond 2500 ppm, oxygen, while improving tensile strength, yet severely decreases ductility. [French] Le comportement mecanique de l'alliage TA6-V6-E2 lors d'un essai dynamique a ete etudie en fonction de la teneur en hydrogene et en oxygene. La sensibilite vis-a-vis de l'hydrogene ne depend que tres faiblement de sa structure migrographique, aciculaire ou equiaxe; elle depend bien plus des conditions de contamination par l'hydrogene et de son histoire thermique apres contamination. Lorsque l'alliage a ete stabilise par un recuit dans le domaine biphase, et a condition que l'absorption d'hydrogene n'entraine pas de modification structurale, la sensibilite vis-a-vis de l'hydrogene est relativement faible: la fragilite apparait brutalement mais pour un

The defect passivation effect of hydrogen on the optical properties of solution-grown ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Urgessa, Z.N., E-mail: zelalem.urgessa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Mbulanga, C.M.; Tankio Djiokap, S.R.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Duvenhage, M.M.; Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa)

2016-01-01

In this study the effect of annealing environment on both low temperature and room temperature photoluminescence (PL) characteristics of ZnO nanorods, grown in solution, is presented. Particular attention is given to the effect of hydrogen defect passivation and its PL related line. It is shown that, irrespective of annealing ambient, an optimum annealing temperature of 300 °C suppresses the defect related emission and significantly improves the UV emission. By considering the stability of hydrogen impurities, the observed results in the PL spectra are analyzed. There is an observed asymmetric broadening on the low energy side of the bound exciton luminescence in the low temperature annealed samples which is explained by a high concentration of ionized impurities related to hydrogen. This has been attributed primarily to the conversion of hydrogen molecule to substitutional hydrogen on the oxygen site (H{sub O}) as a result of annealing.

The defect passivation effect of hydrogen on the optical properties of solution-grown ZnO nanorods

International Nuclear Information System (INIS)

Urgessa, Z.N.; Mbulanga, C.M.; Tankio Djiokap, S.R.; Botha, J.R.; Duvenhage, M.M.; Swart, H.C.

2016-01-01

In this study the effect of annealing environment on both low temperature and room temperature photoluminescence (PL) characteristics of ZnO nanorods, grown in solution, is presented. Particular attention is given to the effect of hydrogen defect passivation and its PL related line. It is shown that, irrespective of annealing ambient, an optimum annealing temperature of 300 °C suppresses the defect related emission and significantly improves the UV emission. By considering the stability of hydrogen impurities, the observed results in the PL spectra are analyzed. There is an observed asymmetric broadening on the low energy side of the bound exciton luminescence in the low temperature annealed samples which is explained by a high concentration of ionized impurities related to hydrogen. This has been attributed primarily to the conversion of hydrogen molecule to substitutional hydrogen on the oxygen site (H_O) as a result of annealing.

Rapid Thermal Annealing of Cathode-Garnet Interface toward High-Temperature Solid State Batteries.

Science.gov (United States)

Liu, Boyang; Fu, Kun; Gong, Yunhui; Yang, Chunpeng; Yao, Yonggang; Wang, Yanbin; Wang, Chengwei; Kuang, Yudi; Pastel, Glenn; Xie, Hua; Wachsman, Eric D; Hu, Liangbing

2017-08-09

High-temperature batteries require the battery components to be thermally stable and function properly at high temperatures. Conventional batteries have high-temperature safety issues such as thermal runaway, which are mainly attributed to the properties of liquid organic electrolytes such as low boiling points and high flammability. In this work, we demonstrate a truly all-solid-state high-temperature battery using a thermally stable garnet solid-state electrolyte, a lithium metal anode, and a V 2 O 5 cathode, which can operate well at 100 °C. To address the high interfacial resistance between the solid electrolyte and cathode, a rapid thermal annealing method was developed to melt the cathode and form a continuous contact. The resulting interfacial resistance of the solid electrolyte and V 2 O 5 cathode was significantly decreased from 2.5 × 10 4 to 71 Ω·cm 2 at room temperature and from 170 to 31 Ω·cm 2 at 100 °C. Additionally, the diffusion resistance in the V 2 O 5 cathode significantly decreased as well. The demonstrated high-temperature solid-state full cell has an interfacial resistance of 45 Ω·cm 2 and 97% Coulombic efficiency cycling at 100 °C. This work provides a strategy to develop high-temperature all-solid-state batteries using garnet solid electrolytes and successfully addresses the high contact resistance between the V 2 O 5 cathode and garnet solid electrolyte without compromising battery safety or performance.

Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

DEFF Research Database (Denmark)

Haug, Franz-Josef; Söderström, Karin; Pahud, Céline

2011-01-01

Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back...

Insight to the Thermal Decomposition and Hydrogen Desorption Behaviors of NaNH2-NaBH4 Hydrogen Storage Composite.

Science.gov (United States)

Pei, Ziwei; Bai, Ying; Wang, Yue; Wu, Feng; Wu, Chuan

2017-09-20

The lightweight compound material NaNH 2 -NaBH 4 is regarded as a promising hydrogen storage composite due to the high hydrogen density. Mechanical ball milling was employed to synthesize the composite NaNH 2 -NaBH 4 (2/1 molar ratio), and the samples were investigated utilizing thermogravimetric-differential thermal analysis-mass spectroscopy (TG-DTA-MS), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR) analyses. The full-spectrum test (range of the ratio of mass to charge: 0-200) shows that the released gaseous species contain H 2 , NH 3 , B 2 H 6 , and N 2 in the heating process from room temperature to 400 °C, and possibly the impurity gas B 6 H 12 also exists. The TG/DTA analyses show that the composite NaNH 2 -NaBH 4 (2/1 molar ratio) is conductive to generate hydrogen so that the dehydrogenation process can be finished before 400 °C. Moreover, the thermal decomposition process from 200 to 400 °C involves two-step dehydrogenation reactions: (1) Na 3 (NH 2 ) 2 BH 4 hydride decomposes into Na 3 BN 2 and H 2 (200-350 °C); (2) remaining Na 3 (NH 2 ) 2 BH 4 reacts with NaBH 4 and Na 3 BN 2 , generating Na, BN, NH 3 , N 2 , and H 2 (350-400 °C). The better mechanism understanding of the thermal decomposition pathway lays a foundation for tailoring the hydrogen storage performance of the composite complex hydrides system.

Concept study of a hydrogen containment process during nuclear thermal engine ground testing

Science.gov (United States)

Wang, Ten-See; Stewart, Eric T.; Canabal, Francisco

A new hydrogen containment process was proposed for ground testing of a nuclear thermal engine. It utilizes two thermophysical steps to contain the hydrogen exhaust. First, the decomposition of hydrogen through oxygen-rich combustion at higher temperature; second, the recombination of remaining hydrogen with radicals at low temperature. This is achieved with two unit operations: an oxygen-rich burner and a tubular heat exchanger. A computational fluid dynamics methodology was used to analyze the entire process on a three-dimensional domain. The computed flammability at the exit of the heat exchanger was less than the lower flammability limit, confirming the hydrogen containment capability of the proposed process.

Ocean thermal plantships for production of ammonia as the hydrogen carrier.

Energy Technology Data Exchange (ETDEWEB)

Panchal, C.B.; Pandolfini, P. P.; Kumm, W. H.; Energy Systems; Johns Hopkins Univ.; Arctic Energies, Ltd.

2009-12-02

Conventional petroleum, natural gas, and coal are the primary sources of energy that have underpinned modern civilization. Their continued availability in the projected quantities required and the impacts of emission of greenhouse gases (GHGs) on the environment are issues at the forefront of world concerns. New primary sources of energy are being sought that would significantly reduce the emissions of GHGs. One such primary source that can help supply energy, water, and fertilizer without GHG emissions is available in the heretofore unexploited thermal gradients of the tropical oceans. The world's oceans are the largest natural collector and reservoir of solar energy. The potential of ocean energy is limitless for producing base-load electric power or ammonia as the hydrogen carrier and fresh water from seawater. However, until now, ocean energy has been virtually untapped. The general perception is that ocean thermal energy is limited to tropical countries. Therefore, the full potential of at-sea production of (1) ammonia as a hydrogen carrier and (2) desalinated water has not been adequately evaluated. Using ocean thermal plantships for the at-sea co-production of ammonia as a hydrogen carrier and desalinated water offer potential energy, environmental, and economic benefits that support the development of the technology. The introduction of a new widespread solution to our projected energy supply requires lead times of a decade or more. Although continuation of the ocean thermal program from the 1970s would likely have put us in a mitigating position in the early 2000s, we still have a window of opportunity to dedicate some of our conventional energy sources to the development of this renewable energy by the time new sources would be critically needed. The primary objective of this project is to evaluate the technical and economic viability of ocean thermal plantships for the production of ammonia as the hydrogen carrier. This objective is achieved by

Effects of thermal annealing on electrical characteristics of Cd/CdS/n-Si/Au-Sb sandwich structure

International Nuclear Information System (INIS)

Saglam, M.; Ates, A.; Guezeldir, B.; Astam, A.; Yildirim, M.A.

2009-01-01

In general, at the metal-semiconductor contacts, interfacial layers have been fabricated by different methods such as molecular beam epitaxy, metal organic chemical vapor deposition, sputtering and vacuum evaporation. However, all of these techniques have encountered various difficulties in the deposited films. Instead of these methods, since Successive Ionic Layer Adsorption and Reaction (SILAR) method is simple, fast, sensitive, and less costly to prepare interfacial layer, we have first employed this method in order to prepare Cd/CdS/n-Si/Au-Sb sandwich structure. For this reason, the CdS thin film has been directly formed on n-type Si substrate by means of SILAR method. The Cd/CdS/n-Si/Au-Sb sandwich structure has demonstrated clearly rectifying behaviour by the current-voltage (I-V) curves studied at room temperature. In order to observe the effect of the thermal annealing, this structure has been annealed at temperatures from 50 to 300 deg. C for 3 min in N 2 atmosphere. The characteristic parameters such as barrier height, ideality factor and series resistance of this structure have been calculated from the forward bias I-V characteristics as a function of annealing temperature with different methods. The values of n, Φ b and mean R s of the initial Cd/CdS/n-Si/Au-Sb sandwich structure were found to be 2.31, 0.790 eV and 1.86 kΩ respectively. After annealing at 300 deg. C, these values were changed to 1.89, 0.765 eV and 0.48 kΩ. It has been seen that the barrier height, ideality factor and series resistance have slightly changed with increasing annealing temperature up to 300 deg. C.

Diffusion of hydrogen from plasma source by grain boundaries in EFG silicon

International Nuclear Information System (INIS)

Fedotov, A.; Saad, Anis M.H.; Drozdov, N.; Mazanik, A.; Ulyashin, A.; Fahrner, W.R.; Stognii, A.

2001-01-01

Diffusion of atomized hydrogen along grain boundaries (GBs) studied by transformation of their electrical activity in p-type silicon bi crystalline samples cut from EFG silicon crystals was investigated. The changes in electrical activity of GBs was estimated relative to both minority (MiC) and majority (MaC) carriers and demonstrated the correlation between the type, structure and thermal pre-history of GBs. It was shown on the base of this study that diffusion along GBs depends essentially on three factors: type of GBs, state of ribbons (as-grown or annealed) and concurrence of grain boundary dangling bonds and boron passivation effects. The model of the longitudinal hydrogen diffusion that explains these results is proposed