WorldWideScience

Sample records for hybrid silicon photonic

  1. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  2. Photonic Integration on the Hybrid Silicon Evanescent Device Platform

    Directory of Open Access Journals (Sweden)

    Hyundai Park

    2008-01-01

    Full Text Available This paper reviews the recent progress of hybrid silicon evanescent devices. The hybrid silicon evanescent device structure consists of III-V epitaxial layers transferred to silicon waveguides through a low-temperature wafer bonding process to achieve optical gain, absorption, and modulation efficiently on a silicon photonics platform. The low-temperature wafer bonding process enables fusion of two different material systems without degradation of material quality and is scalable to wafer-level bonding. Lasers, amplifiers, photodetectors, and modulators have been demonstrated with this hybrid structure and integration of these individual components for improved optical functionality is also presented. This approach provides a unique way to build photonic active devices on silicon and should allow application of silicon photonic integrated circuits to optical telecommunication and optical interconnects.

  3. Hybrid Lithium Niobate and Silicon Photonic Waveguides

    CERN Document Server

    Weigel, Peter O; DeRose, Christopher; Pomerene, Andrew T; Starbuck, Andrew L; Lentine, Anthony L; Stenger, Vincent; Mookherjea, Shayan

    2015-01-01

    We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with adiabatic tapers that preserve the symmetry of the fundamental quasi TE mode and prevent mode rotation. We find the average propagation loss in cross section B to be 4.3 dB/cm with a standard deviation of 2.1 dB/cm, comparable with a 3 um SiO2 clad (in place of LN) Si waveguide whose average propagation loss was 3.1 dB/cm with a standard deviation of 2.1 dB/cm.

  4. Ultrahigh-speed hybrid laser for silicon photonic integrated chips

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Park, Gyeong Cheol; Ran, Qijiang;

    2013-01-01

    and will be 80% in near future. This challenge strongly has motivated replacing electrical interconnects with optical ones even in chip level communications [1]. This chip-level optical interconnects need quite different performance of optoelectronic devices than required for conventional optical communications....... For a light source, the energy consumption per sending a bit is required to be laser diode...... and light-emitting diode (LED) structures have been proposed so far. Our hybrid laser is one of these efforts [2]. The hybrid laser consists of a dielectric reflector, a III-V semiconductor active material, and a high-index-contrast grating (HCG) reflector formed in the silicon layer of a silicon...

  5. Effects of optical backscattering on silicon photonic hybrid laser performance

    Science.gov (United States)

    Pacradouni, V.; Klein, J.; Pond, J.

    2016-04-01

    We present numerical results on the effect of backscattering at the junctions of double bus ring resonators in a Vernier ring hybrid laser design. The structure is comprised off a pair of III-V gain media evanescently coupled to a silicon on insulator racetrack comprised of a pair of double bus ring resonators coupled together through straight and flared waveguide sections. We show how the small backscattering at the ring resonator junctions has the effect of splitting and shifting the resonances off the clockwise and counter clockwise propagating modes thereby modifying the feedback spectrum from the ideal case. We then simulate results such as light current (LI) curves, relative intensity noise (RIN) and laser spectrum, and compare the laser performance including backscattering effects with the ideal case.

  6. Hybrid photon detectors

    CERN Document Server

    D'Ambrosio, C

    2003-01-01

    Hybrid photon detectors detect light via vacuum photocathodes and accelerate the emitted photoelectrons by an electric field towards inversely polarized silicon anodes, where they are absorbed, thus producing electron-hole pairs. These, in turn, are collected and generate electronic signals on their ohmic contacts. This review first describes the characteristic properties of the main components of hybrid photon detectors: light entrance windows, photocathodes, and silicon anodes. Then, essential relations describing the trajectories of photoelectrons in electric and magnetic fields and their backscattering from the silicon anodes are derived. Depending on their anode configurations, three families of hybrid photon detectors are presented: hybrid photomultiplier tubes with single anodes for photon counting with high sensitivity and for gamma spectroscopy; multi-anode photon detector tubes with anodes subdivided into square or hexagonal pads for position-sensitive photon detection; imaging silicon pixel array t...

  7. Development of hybrid photon detectors with integrated silicon pixel readout for the RICH counters of LHCb

    CERN Document Server

    Alemi, M; Formenti, F; Gys, Thierry; Piedigrossi, D; Puertolas, D; Rosso, E; Snoeys, W; Wyllie, Ken H

    1999-01-01

    We report on the ongoing work towards a hybrid photon detector with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based $9 on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a fast, binary readout chip with matching pixel electronics. The $9 performance of a half-scale prototype is presented, together with the developments and tests of a full-scale tube with large active area. Specific requirements for pixel front-end and readout electronics in LHCb are outlined, and $9 recent results obtained from pixel chips applicable to hybrid photon detector design are summarized.

  8. Low-energy-consumption hybrid lasers for silicon photonics

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Ran, Qijiang; Mørk, Jesper

    2012-01-01

    Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed.......Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed....

  9. One-dimensional photonic crystal slot waveguide for silicon-organic hybrid electro-optic modulators.

    Science.gov (United States)

    Yan, Hai; Xu, Xiaochuan; Chung, Chi-Jui; Subbaraman, Harish; Pan, Zeyu; Chakravarty, Swapnajit; Chen, Ray T

    2016-12-01

    In an on-chip silicon-organic hybrid electro-optic (EO) modulator, the mode overlap with EO materials, in-device effective r33, and propagation loss are among the most critical factors that determine the performance of the modulator. Various waveguide structures have been proposed to optimize these factors, yet there is a lack of comprehensive consideration on all of them. In this Letter, a one-dimensional (1D) photonic crystal (PC) slot waveguide structure is proposed that takes all these factors into consideration. The proposed structure takes advantage of the strong mode confinement within a low-index region in a conventional slot waveguide and the slow-light enhancement from the 1D PC structure. Its simple geometry makes it robust to resist fabrication imperfections and helps reduce the propagation loss. Using it as a phase shifter in a Mach-Zehnder interferometer structure, an integrated silicon-organic hybrid EO modulator was experimentally demonstrated. The observed effective EO coefficient is as high as 490 pm/V. The measured half-wave voltage and length product is less than 1  V·cm and can be further improved. A potential bandwidth of 61 GHz can be achieved and further improved by tailoring the doping profile. The proposed structure offers a competitive novel phase-shifter design, which is simple, highly efficient, and with low optical loss, for on-chip silicon-organic hybrid EO modulators.

  10. Antenna-coupled silicon-organic hybrid integrated photonic crystal modulator for broadband electromagnetic wave detection

    CERN Document Server

    Zhang, Xingyu; Subbaraman, Harish; Wang, Shiyi; Zhan, Qiwen; Luo, Jingdong; Jen, Alex K -Y; Chung, Chi-jui; Yan, Hai; Pan, Zeyu; Nelson, Robert L; Lee, Charles Y -C; Chen, Ray T

    2015-01-01

    In this work, we design, fabricate and characterize a compact, broadband and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. The large electro-optic (EO) coefficient of organic polymer, the slow-light effects in the silicon slot photonic crystal waveguide (PCW), and the broadband field enhancement provided by the bowtie antenna, are all combined to enhance the interaction of microwaves and optical waves, enabling a high EO modulation efficiency and thus a high sensitivity. The modulator is experimentally demonstrated with a record-high effective in-device EO modulation efficiency of r33=1230pm/V. Modulation response up to 40GHz is measured, with a 3-dB bandwidth of 11GHz. The slot PCW has an interaction length of 300um, and the bowtie antenna has an area smaller than 1cm2. The bowtie antenna in the device is experimentally demonstrated to have a broadband characteristics with a central resonance frequency of 10GHz, as we...

  11. Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics

    Science.gov (United States)

    Durel, Jocelyn; Ferrotti, Thomas; Chantre, Alain; Cremer, Sébastien; Harduin, Julie; Bernabé, Stéphane; Kopp, Christophe; Boeuf, Frédéric; Ben Bakir, Badhise; Broquin, Jean-Emmanuel

    2016-02-01

    In this paper, the simulation, design and fabrication of a back-side coupling (BSC) concept for silicon photonics, which targets heterogeneous hybrid III-V/Si laser integration is presented. Though various demonstrations of a complete SOI integration of passive and active photonic devices have been made, they all feature multi-level planar metal interconnects, and a lack of integrated light sources. This is mainly due to the conflict between the need of planar surfaces for III-V/Si bonding and multiple levels of metallization. The proposed BSC solution to this topographical problem consists in fabricating lasers on the back-side of the Si waveguides using a new process sequence. The devices are based on a hybrid structure composed of an InGaAsP MQW active area and a Si-based DBR cavity. The emitted light wavelength is accordable within a range of 20 nm around 1.31μm thanks to thermal heaters and the laser output is fiber coupled through a Grating Coupler (GC). From a manufacturing point of view, the BSC approach provides not only the advantages of allowing the use of a thin-BOX SOI instead of a thick one; but it also shifts the laser processing steps and their materials unfriendly to CMOS process to the far back-end areas of fabrication lines. Moreover, aside from solving technological integration issues, the BSC concept offers several new design opportunities for active and passive devices (heat sink, Bragg gratings, grating couplers enhanced with integrated metallic mirrors, tapers…). These building boxes are explored here theoretically and experimentally.

  12. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  13. On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

    Science.gov (United States)

    Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

    2015-02-11

    The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

  14. 40 GHz electro-optic modulation in hybrid silicon-organic slotted photonic crystal waveguides.

    Science.gov (United States)

    Wülbern, Jan Hendrik; Prorok, Stefan; Hampe, Jan; Petrov, Alexander; Eich, Manfred; Luo, Jingdong; Jen, Alex K-Y; Jenett, Martin; Jacob, Arne

    2010-08-15

    In this Letter we demonstrate broadband electro-optic modulation with frequencies of up to 40 GHz in slotted photonic crystal waveguides based on silicon-on-insulator substrates covered and infiltrated with a nonlinear optical polymer. Two-dimensional photonic crystal waveguides in silicon enable integrated optical devices with an extremely small geometric footprint on the scale of micrometers. The slotted waveguide design optimizes the overlap of the optical and electric fields in the second-order nonlinear optical medium and, hence, the interaction of the optical and electric waves.

  15. Neuromorphic Silicon Photonics

    CERN Document Server

    Tait, Alexander N; de Lima, Thomas Ferreira; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

    2016-01-01

    We report first observations of an integrated analog photonic network, in which connections are configured by microring weight banks, as well as the first use of electro-optic modulators as photonic neurons. A mathematical isomorphism between the silicon photonic circuit and a continuous neural model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, existing neural engineering tools can be adapted to silicon photonic information processing systems. A 49-node silicon photonic neural network programmed using a "neural compiler" is simulated and predicted to outperform a conventional approach 1,960-fold in a toy differential system emulation task. Photonic neural networks leveraging silicon photonic platforms could access new regimes of ultrafast information processing for radio, control, and scientific computing.

  16. Roadmap on silicon photonics

    Science.gov (United States)

    Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

    2016-07-01

    Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

  17. CERN manufactured hybrid photon detectors

    CERN Multimedia

    Maximilien Brice

    2004-01-01

    These hybrid photon detectors (HPDs) produce an electric signal from a single photon. An electron is liberated from a photocathode and accelerated to a silicon pixel array allowing the location of the photon on the cathode to be recorded. The electronics and optics for these devices have been developed in close collaboration with industry. HPDs have potential for further use in astrophysics and medical imaging.

  18. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  19. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    CERN Document Server

    Alemi, M; Gys, Thierry; Mikulec, B; Piedigrossi, D; Puertolas, D; Rosso, E; Schomaker, R; Snoeys, W; Wyllie, Ken H

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface...

  20. Silicon photonics: optical modulators

    Science.gov (United States)

    Reed, G. T.; Gardes, F. Y.; Hu, Youfang; Thomson, D.; Lever, L.; Kelsall, R.; Ikonic, Z.

    2010-01-01

    Silicon Photonics has the potential to revolutionise a whole raft of application areas. Currently, the main focus is on various forms of optical interconnects as this is a near term bottleneck for the computing industry, and hence a number of companies have also released products onto the market place. The adoption of silicon photonics for mass production will significantly benefit a range of other application areas. One of the key components that will enable silicon photonics to flourish in all of the potential application areas is a high performance optical modulator. An overview is given of the major Si photonics modulator research that has been pursued at the University of Surrey to date as well as a worldwide state of the art showing the trend and technology available. We will show the trend taken toward integration of optical and electronic components with the difficulties that are inherent in such a technology.

  1. Hybrid graphene/silicon integrated optical isolators with photonic spin-orbit interaction

    CERN Document Server

    Ma, Jingwen; Yu, Zejie; Sun, Xiankai

    2016-01-01

    Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spin exhibit different response to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 um. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light to monolithic integration of nonrecipro...

  2. Silicon applications in photonics

    Science.gov (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  3. Hybrid silicon evanescent approach to optical interconnects

    OpenAIRE

    Liang, Di; Fang, Alexander W.; Chen, Hui-Wen; Sysak, Matthew N; Koch, Brian R.; Lively, Erica; Raday, Omri; Kuo, Ying-hao; Jones, Richard; Bowers, John E

    2009-01-01

    We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III–V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication...

  4. Silicon photonics manufacturing.

    Science.gov (United States)

    Zortman, William A; Trotter, Douglas C; Watts, Michael R

    2010-11-08

    Most demonstrations in silicon photonics are done with single devices that are targeted for use in future systems. One of the costs of operating multiple devices concurrently on a chip in a system application is the power needed to properly space resonant device frequencies on a system's frequency grid. We asses this power requirement by quantifying the source and impact of process induced resonant frequency variation for microdisk resonators across individual die, entire wafers and wafer lots for separate process runs. Additionally we introduce a new technique, utilizing the Transverse Electric (TE) and Transverse Magnetic (TM) modes in microdisks, to extract thickness and width variations across wafers and dice. Through our analysis we find that a standard six inch Silicon on Insulator (SOI) 0.35 μm process controls microdisk resonant frequencies for the TE fundamental resonances to within 1 THz across a wafer and 105 GHz within a single die. Based on demonstrated thermal tuner technology, a stable manufacturing process exhibiting this level of variation can limit the resonance trimming power per resonant device to 231 μW. Taken in conjunction with the power to compensate for thermal environmental variations, the expected power requirement to compensate for fabrication-induced non-uniformities is 17% of that total. This leads to the prediction that thermal tuning efficiency is likely to have the most dominant impact on the overall power budget of silicon photonics resonator technology.

  5. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  6. The Vacuum Silicon Photomultiplier Tube (VSiPMT): A new version of a hybrid photon detector

    Energy Technology Data Exchange (ETDEWEB)

    Russo, Stefano, E-mail: srusso@na.infn.i [Universita di Napoli ' Federico II' , Dipartimento di Scienze fisiche, via Cintia 80126 Napoli (Italy); Barbarino, Giancarlo [Universita di Napoli ' Federico II' , Dipartimento di Scienze fisiche, via Cintia 80126 Napoli (Italy); Asmundis, Riccardo de; De Rosa, Gianfranca [Istituto Nazionale di fisica Nucleare, sezione di Napoli, Complesso di Monte S. Angelo Ed. 6, via Cintia 80126 Napoli (Italy)

    2010-11-01

    The future astroparticle experiments will study both energetic phenomena and extremely rare events from astrophysical sources. Since most of these families of experiments are carried out by using scintillation phenomena, Cherenkov or fluorescence radiation, the development of photosensitive detectors seems to be the right way to increase the experimental sensitivity. Therefore we propose an innovative design for a modern, high gain, silicon-based Vacuum Silicon Photomultiplier Tube (VSiPMT), which combines three fully established and well-understood technologies: the manufacture of hemispherical vacuum tubes with the possibility of very large active areas, the photocathode glass deposition and the novel Geiger-mode avalanche silicon photodiode (G-APD) for which a mass production is today available. This new design, based on G-APD as the electron multiplier, allows overcoming the limits of a classical PMT dynode chain.

  7. Programmable Quantum Photonic Processor Using Silicon Photonics

    Science.gov (United States)

    2017-04-01

    carbon nanotubes , as these are well positioned to benefit from recent breakthroughs in nanofabrication and materials growth techniques. The...demonstrations, we leveraged an advanced silicon photonics foundry process (OPSIS) to integrate spectral stabilization and filtering of the pump field ...and ballistic quantum computing. Single photon sources based on atomic emitters have improved greatly over recent years -- for example, emission from

  8. Silicon active photonic devices

    Science.gov (United States)

    Dimitropoulos, Dimitrios

    Active photonic devices utilizing the optical nonlinearities of silicon have emerged in the last 5 years and the effort for commercial photonic devices in the material that has been the workhorse of electronics has been building up since. This dissertation presents the theory for some of these devices. We are concerned herein with CW lasers, amplifiers and wavelength converters that are based on the Raman effect. There have already been cursory experimental demonstrations of these devices and some of their limitations are already apparent. Most of the limitations observed are because of the appearance of effects that are competing with stimulated Raman scattering. Under the high optical powers that are necessary for the Raman effect (tens to hundrends of mW's) the process of optical two-photon (TPA) absorption occurs. The absorption of optical power that it causes itself is weak but in the process electrons and holes are generated which can further absorb light through the free-carrier absorption effect (FCA). The effective "lifetime" that these carriers have determines the magnitude of the FCA loss. We present a model for the carrier lifetime in Silicon-On-Insulator (SOI) waveguides and numerical simulations to understand how this critical parameter varies and how it can be controlled. A p-i-n junction built along SOI waveguides can help achieve lifetime of the order of 20--100 ps but the price one has to pay is on-chip electrical power consumption on the order of 100's of mWs. We model CW Raman lasers and we find that the carrier lifetime reduces the output power. If the carrier lifetime exceeds a certain "critical" value optical losses become overwhelming and lasing is impossible. As we show, in amplifiers, the nonlinear loss does not only result in diminished gain, but also in a higher noise figure. Finally the effect of Coherent anti-Stokes Raman scattering (CARS) is examined. The effect is important because with a pump frequency at 1434nm coherent power

  9. Hybrid silicon evanescent devices

    Directory of Open Access Journals (Sweden)

    Alexander W. Fang

    2007-07-01

    Full Text Available Si photonics as an integration platform has recently been a focus of optoelectronics research because of the promise of low-cost manufacturing based on the ubiquitous electronics fabrication infrastructure. The key challenge for Si photonic systems is the realization of compact, electrically driven optical gain elements. We review our recent developments in hybrid Si evanescent devices. We have demonstrated electrically pumped lasers, amplifiers, and photodetectors that can provide a low-cost, scalable solution for hybrid integration on a Si platform by using a novel hybrid waveguide architecture, consisting of III-V quantum wells bonded to Si waveguides.

  10. Photonic Crystal Sensors Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Claudia Pacholski

    2013-04-01

    Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  11. Photonic crystal sensors based on porous silicon.

    Science.gov (United States)

    Pacholski, Claudia

    2013-04-09

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  12. Utilization of thermal effects for silicon photonics

    Science.gov (United States)

    Dai, Daoxin; Yu, Longhai; Chen, Sitao; Wu, Hao

    2015-08-01

    Thermal effect plays a key role and has been utilized for various photonic devices. For silicon photonics, the thermal effect is usually important because of the large thermo-optical coefficient of silicon material. This paper gives a review for the utilization of thermal effects for silicon photonics. First, the thermal effect is very beneficial to realize energy-efficient silicon photonic devices with tunability/switchability (including switches, variable optical attenuators, etc). Traditionally metal micro-heater sitting on a buried silicon-on-insulator (SOI) nanowire is used to introduce a phase shift for thermal tunability by injecting a electrical current. An effective way to improve the energy-efficiency of thermal tuning is reducing the volume of the optical waveguide as well as the micro-heater. Our recent work on silicon nanophotonic waveguides with novel nano-heaters based on metal wires as well as graphene ribbons will be summarized. Second, the thermal resistance effect of the metal strip on a hybrid plasmonic waveguide structure can be utilized to realize an ultra-small on-chip photodetector available for an ultra-broad band of wavelength, which will also be discussed.

  13. Performance of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon Pixel readout for Cherenkov ring detection

    CERN Document Server

    Alemi, M; Bibby, J H; Campbell, M; Duane, A; Easo, S; Gys, Thierry; Halley, A W; Piedigrossi, D; Puertolas, D; Rosso, E; Simmons, B; Snoeys, W; Websdale, David M; Wotton, S A; Wyllie, Ken H

    1999-01-01

    We report on the first test beam performance of a hybrid photon detector prototype, using binary readout electronics, intended for use in the ring imaging Cherenkov detectors of the LHCb experiment at the CERN Large Hadron Collider. The photon detector is based on a cross-focussed image intensifier tube geometry. The anode consists of a silicon pixel array bump-bonded to a binary readout chip with matching pixel electronics. The detector has been installed in a quarter-scale prototype vessel of the LHCb ring imaging Cherenkov system. Focussed ring images produced by 120 GeV/c negative pions traversing an air radiator have been recorded. The observed light yield and Cherenkov angle resolution are discussed.

  14. Performance of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout for Cherenkov ring detection

    Energy Technology Data Exchange (ETDEWEB)

    Alemi, M.; Barber, G.; Bibby, J.; Campbell, M.; Duane, A.; Easo, S.; Gys, T.; Halley, A.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Simmons, B.; Snoeys, W.; Websdale, D.; Wotton, S.; Wyllie, K

    1999-08-01

    We report on the first test beam performance of a hybrid photon detector prototype, using binary readout electronics, intended for use in the ring imaging Cherenkov detectors of the LHCb experiment at the CERN Large Hadron Collider. The photon detector is based on a cross-focussed image intensifier tube geometry. The anode consists of a silicon pixel array bump-bonded to a binary readout chip with matching pixel electronics. The detector has been installed in a quarter-scale prototype vessel of the LHCb ring imaging Cherenkov system. Focussed ring images produced by 120 GeV/c negative pions traversing an air radiator have been recorded. The observed light yield and Cherenkov angle resolution are discussed.

  15. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  16. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.;

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  17. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  18. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  19. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  20. Multifunctional optomechanical dynamics in integrated silicon photonics

    Science.gov (United States)

    Li, Huan

    Light can generate forces on matter. The nature of these forces is electromagnetic force, or Lorentz force. The emergence and rapid progress of nanotechnology provided an unprecedented platform where the very feeble optical forces began to play significant roles. The interactions between light and matter in nanoscale has been the focus of almost a decade of active theoretical and experimental investigations, which are still ongoing and constitute a whole new burgeoning branch of nanotechnology, nano-optomechanical systems (NOMS). In such context, the general goal of my research is to generate, enhance and control optical forces on silicon photonics platforms, with a focus on developing new functionalities and demonstrating novel effects, which will potentially lead to a new class of silicon photonic devices for a broad spectrum of applications. In this dissertation, the concept of optical force and the general background of the NOMS research area are first introduced. The general goal of the silicon photonics research area and the research presented in this dissertation is then described. Subsequently, the fundamental theory for optical force is summarized. The different methods to calculate optical forces are enumerated and briefly reviewed. Integrated hybrid plasmonic waveguide (HPWG) devices have been successfully fabricated and the enhanced optical forces experimentally measured for the first time. All-optical amplification of RF signals has been successfully demonstrated. The optical force generated by one laser is used to mechanically change the optical path and hence the output power of another laser. In addition, completely optically tunable mechanical nonlinear behavior has been demonstrated for the first time and systematically studied. Optomechanical photon shuttling between photonic cavities has been demonstrated with a "photon see-saw" device. This photon see-saw is a novel multicavity optomechanical device which consists of two photonic crystal

  1. Lasing in silicon-organic hybrid waveguides

    Science.gov (United States)

    Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

    2016-03-01

    Silicon photonics enables large-scale photonic-electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon-organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry.

  2. Lasing in silicon-organic hybrid waveguides.

    Science.gov (United States)

    Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

    2016-03-07

    Silicon photonics enables large-scale photonic-electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon-organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry.

  3. The Achievements and Challenges of Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Richard Soref

    2008-01-01

    Full Text Available A brief overview of silicon photonics is given here in order to provide a context for invited and contributed papers in this special issue. Recent progress on silicon-based photonic components, photonic integrated circuits, and optoelectronic integrated circuits is surveyed. Present and potential applications are identified along with the scientific and engineering challenges that must be met in order to actualize applications. Some on-going government-sponsored projects in silicon optoelectronics are also described.

  4. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  5. Silicon photonics III systems and applications

    CERN Document Server

    Lockwood, David

    2016-01-01

    This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

  6. Hybrid silicon evanescent approach to optical interconnects

    Science.gov (United States)

    Liang, Di; Fang, Alexander W.; Chen, Hui-Wen; Sysak, Matthew N.; Koch, Brian R.; Lively, Erica; Raday, Omri; Kuo, Ying-Hao; Jones, Richard; Bowers, John E.

    2009-06-01

    We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III-V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, Mach-Zehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III-V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM regions are 1520, 1440 and 1480 nm, respectively. The high-temperature operation characteristics of the HSEP are studied experimentally and theoretically. An overall characteristic temperature ( T 0) of 51°C, an above threshold characteristic temperature ( T 1) of 100°C, and a thermal impedance ( Z T ) of 41.8°C/W, which agrees with the theoretical prediction of 43.5°C/W, are extracted from the Fabry-Perot devices. Scaling this platform to larger dimensions is demonstrated up to 150 mm wafer diameter. A vertical outgassing channel design is developed to accomplish high-quality III-V epitaxial transfer to silicon in a timely and dimension-independent fashion.

  7. Silicon photonic integrated devices for datacenter optical networks

    Science.gov (United States)

    Fiorentino, Marco; Chen, Chin-Hui; Kurczveil, Géza; Liang, Di; Peng, Zhen; Beausoleil, Raymond

    2014-03-01

    The evolution of computing infrastructure and workloads has put an enormous pressure on datacenter networks. It is expected that bandwidth will scale without increases in the network power envelope and total cost of ownership. Networks based on silicon photonic devices promise to help alleviate these problems, but a viable development path for these technologies is not yet fully outlined. In this paper, we report our progress on developing components and strategies for datacenter silicon photonics networks. We will focus on recent progress on compact, low-threshold hybrid Si lasers and the CWDM transceivers based on these lasers as well as DWDM microring resonator-based transceivers.

  8. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  9. Second-order nonlinear silicon-organic hybrid waveguides.

    Science.gov (United States)

    Alloatti, L; Korn, D; Weimann, C; Koos, C; Freude, W; Leuthold, J

    2012-08-27

    We describe a concept for second-order nonlinear optical processes in silicon photonics. A silicon-organic hybrid (SOH) double slot waveguide is dispersion-engineered for mode phase-matching (MPM). The proposed waveguide enables highly efficient nonlinear processes in the mid-IR range. With a cladding nonlinearity of χ(2) = 230 pm/V and 20 dBm pump power at a CW wavelength of 1550 nm, we predict a gain of 14.7 dB/cm for a 3100 nm signal. The suggested structure enables for the first time efficient second-order nonlinear optical mixing in silicon photonics with standard technology.

  10. Hybrid III-V Silicon Lasers

    Science.gov (United States)

    Bowers, John

    2014-03-01

    Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

  11. Integrated silicon and silicon nitride photonic circuits on flexible substrates.

    Science.gov (United States)

    Chen, Yu; Li, Mo

    2014-06-15

    Flexible integrated photonic devices based on crystalline materials on plastic substrates have a promising potential in many unconventional applications. In this Letter, we demonstrate a fully integrated photonic system including ring resonators and grating couplers, based on both crystalline silicon and silicon nitride, on flexible plastic substrate by using the stamping-transfer method. A high yield has been achieved by a simple, yet reliable transfer method without significant performance degradation.

  12. Refractometric sensor based on silicon photonic wires

    OpenAIRE

    2009-01-01

    We have characterized the refractive index sensing properties of a compact refractometric sensor based on a grated silicon photonic wire. A resolution of $10^{-5}$ in refractive index has been measured.

  13. Silicon photonic thermometer operating on multiple polarizations

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

    2016-01-01

    A silicon photonics optical thermometer simultaneously operating on the multiple polarizations is designed and experimentally demonstrated. Measured sensitivities are 86pm/°C and 48pm/°C for the transverse-electric and transverse-magnetic polarizations, respectively.......A silicon photonics optical thermometer simultaneously operating on the multiple polarizations is designed and experimentally demonstrated. Measured sensitivities are 86pm/°C and 48pm/°C for the transverse-electric and transverse-magnetic polarizations, respectively....

  14. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  15. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  16. Long-wavelength silicon photonic integrated circuits

    OpenAIRE

    2014-01-01

    In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 mu m wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5-5 mu m wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors on this platform is described for the integration of lasers and photodetectors op...

  17. Mid-infrared silicon photonic devices

    Science.gov (United States)

    Mashanovich, Goran Z.; Milosevic, Milan M.; Nedeljkovic, Milos; Owens, Nathan; Headley, William R.; Teo, Ee Jin; Xiong, Boqian; Yang, Pengyuan; Hu, Youfang

    2011-01-01

    The mid-infrared spectral region is interesting for bio-chemical sensing, environmental monitoring, free space communications, or military applications. Silicon is relatively low-loss from 1.2 to 8 μm and from 24 to 100 μm, and therefore silicon photonic circuits can be used in mid- and far- infrared wavelength ranges. In this paper we investigate several silicon based waveguide structures for mid-infrared wavelength region.

  18. Quantum photonics hybrid integration platform

    CERN Document Server

    Murray, Eoin; Meany, Thomas; Flother, Frederick F; Lee, James P; Griffiths, Jonathan P; Jones, Geb A C; Farrer, Ian; Ritchie, David A; Bennet, Anthony J; Shields, Andrew J

    2015-01-01

    Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to an SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO2 cladding. A tuneable Mach Zehnder modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single photon nature of the emission was veri?ed by an on-chip Hanbury Brown and Twiss measurement.

  19. Quantum photonics hybrid integration platform

    Energy Technology Data Exchange (ETDEWEB)

    Murray, E.; Floether, F. F. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ellis, D. J. P.; Meany, T.; Bennett, A. J., E-mail: anthony.bennet@crl.toshiba.co.uk; Shields, A. J. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Lee, J. P. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Engineering Department, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Griffiths, J. P.; Jones, G. A. C.; Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

    2015-10-26

    Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single-photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to a SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO{sub 2} cladding. A tuneable Mach Zehnder interferometer (MZI) modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single-photon nature of the emission was verified using the on-chip MZI as a beamsplitter in a Hanbury Brown and Twiss measurement.

  20. Mid-IR heterogeneous silicon photonics

    Science.gov (United States)

    Roelkens, Gunther; Dave, Utsav; Gassenq, Alban; Hattasan, Nannicha; Hu, Chen; Kuyken, Bart; Leo, Francois; Malik, Aditya; Muneeb, Muhammad; Ryckeboer, Eva; Uvin, Sarah; Hens, Zeger; Baets, Roel G.; Shimura, Yosuke; Gencarelli, Federica; Vincent, Benjamin; Loo, Roger; Van Campenhout, Joris; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Tournié, Eric; Chen, Xia; Nedeljkovic, Milos; Mashanovich, Goran Z.; Shen, Li; Healy, Noel; Peacock, Anna C.; Liu, Xiaoping; Osgood, Richard M.; Green, William

    2013-12-01

    In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources.

  1. Silicon Photonics II Components and Integration

    CERN Document Server

    Lockwood, David J

    2011-01-01

    This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

  2. Mid-infrared nonlinear silicon photonics

    Science.gov (United States)

    Liu, Xiaoping; Kuyken, Bart; Green, William M. J.; Osgood, Richard M.; Baets, Roel; Roelkens, Gunther

    2014-03-01

    Recently there has been a growing interest in mid-infrared (mid-IR) photonic technology with a wavelength of operation approximately from 2-14 μm. Among several established mid-IR photonic platforms, silicon nanophotonic platform could potentially offer ultra-compact, and monolithically integrated mid-IR photonic devices and device arrays, which could have board impact in the mid-IR technology, such as molecular spectroscopy, and imaging. At room temperature, silicon has a bandgap ~ 1.12 eV resulting in vanishing two-photon absorption (TPA) for mid-IR wavelengths beyond 2.2 μm, which, coupled with silicon's large nonlinear index of refraction and its strong waveguide optical confinement, enables efficient nonlinear processes in the mid-IR. By taking advantage of these nonlinear processes and judicious dispersion engineering in silicon waveguides, we have recently demonstrated a handful of silicon mid-IR nonlinear components, including optical parametric amplifiers (OPA), broadband sources, and a wavelength translator. Silicon nanophotonic waveguide's anomalous dispersion design, providing four-wave-mixing (FWM) phase-matching, has enabled the first demonstration of silicon mid-IR optical parametric amplifier (OPA) with a net off-chip gain exceeding 13 dB. In addition, reduction of propagation losses and balanced second and fourth order waveguide dispersion design led to an OPA with an extremely broadband gain spectrum from 1.9-2.5 μm and >50 dB parametric gain, upon which several novel silicon mid-IR light sources were built, including a mid-IR optical parametric oscillator, and a supercontinuum source. Finally, a mid-IR wavelength translation device, capable of translating signals near 2.4 μm to the telecom-band near 1.6 μm with simultaneous 19 dB gain, was demonstrated.

  3. 40 Gbit/s silicon-organic hybrid (SOH) phase modulator

    OpenAIRE

    Alloatti L.; Korn D.; Hillerkuss D.; Vallaitis T.; Li J; Bonk R.; Palmer R.; Schellinger T.; Barklund A.; Dinu R.

    2010-01-01

    A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with an organic material. The silicon organic hybrid (SOH) approach allows combining highly nonlinear electro-optic organic materials with CMOS-compatible silicon photonics technology.

  4. Nonclassical light sources for silicon photonics

    Science.gov (United States)

    Bajoni, Daniele; Galli, Matteo

    2017-09-01

    Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

  5. EDITORIAL: Special issue on silicon photonics

    Science.gov (United States)

    Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

    2008-06-01

    The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

  6. Silicon Nano-Photonic Devices

    DEFF Research Database (Denmark)

    Pu, Minhao

    This thesis deals with the design, fabrication and characterization of nano-photonic devices including ridge waveguide components, microring resonators, and photonic crystal components, and explore the potential for these devices in dierent applications ranging from optical communication...... is achieved with small power variation. A widely tunable microwave notch lter is also experimentally demonstrated at 40 GHz. Other application such as pulse repetition rate multiplication by using microring resonator is also presented. Photonic crystal components are studied. Two dierent types of photonic...... crystal structures are analyzed concerning index sensitivity, dispersion engineering, and slow-light coupling. Several photonic crystal devices such as index sensor, slow-light coupler, and all-optical tunable cavity are presented....

  7. Hybrid Photonic Integration on a Polymer Platform

    Directory of Open Access Journals (Sweden)

    Ziyang Zhang

    2015-09-01

    Full Text Available To fulfill the functionality demands from the fast developing optical networks, a hybrid integration approach allows for combining the advantages of various material platforms. We have established a polymer-based hybrid integration platform (polyboard, which provides flexible optical input/ouptut interfaces (I/Os that allow robust coupling of indium phosphide (InP-based active components, passive insertion of thin-film-based optical elements, and on-chip attachment of optical fibers. This work reviews the recent progress of our polyboard platform. On the fundamental level, multi-core waveguides and polymer/silicon nitride heterogeneous waveguides have been fabricated, broadening device design possibilities and enabling 3D photonic integration. Furthermore, 40-channel optical line terminals and compact, bi-directional optical network units have been developed as highly functional, low-cost devices for the wavelength division multiplexed passive optical network. On a larger scale, thermo-optic elements, thin-film elements and an InP gain chip have been integrated on the polyboard to realize a colorless, dual-polarization optical 90° hybrid as the frontend of a coherent receiver. For high-end applications, a wavelength tunable 100Gbaud transmitter module has been demonstrated, manifesting the joint contribution from the polyboard technology, high speed polymer electro-optic modulator, InP driver electronics and ceramic electronic interconnects.

  8. Hybrid photonic chip interferometer for embedded metrology

    Science.gov (United States)

    Kumar, P.; Martin, H.; Maxwell, G.; Jiang, X.

    2014-03-01

    Embedded metrology is the provision of metrology on the manufacturing platform, enabling measurement without the removal of the work piece. Providing closer integration of metrology upon the manufacturing platform can lead to the better control and increased throughput. In this work we present the development of a high precision hybrid optical chip interferometer metrology device. The complete metrology sensor system is structured into two parts; optical chip and optical probe. The hybrid optical chip interferometer is based on a silica-on-silicon etched integrated-optic motherboard containing waveguide structures and evanescent couplers. Upon the motherboard, electro-optic components such as photodiodes and a semiconductor gain block are mounted and bonded to provide the required functionality. The key structure in the device is a tunable laser module based upon an external-cavity diode laser (ECDL). Within the cavity is a multi-layer thin film filter which is rotated to select the longitudinal mode at which the laser operates. An optical probe, which uses a blazed diffracting grating and collimating objective lens, focuses light of different wavelengths laterally over the measurand. Incident laser light is then tuned in wavelength time to effectively sweep an `optical stylus' over the surface. Wavelength scanning and rapid phase shifting can then retrieve the path length change and thus the surface height. We give an overview of the overall design of the final hybrid photonic chip interferometer, constituent components, device integration and packaging as well as experimental test results from the current version now under evaluation.

  9. Advantages of gated silicon single photon detectors

    CERN Document Server

    Lunghi, T; Barreiro, C; Stucki, D; Sanguinetti, B; Zbinden, H

    2012-01-01

    We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45\\pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and -30{\\deg}C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the "charge persistence" effect, whereby a detector clicks some time after having been illuminated.

  10. Photonic Crystal Sensors Based on Porous Silicon

    OpenAIRE

    Claudia Pacholski

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photo...

  11. Silicon Photonic Integrated Circuit Mode Multiplexer

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2013-01-01

    We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully...

  12. Optical properties of highly nonlinear silicon-organic hybrid (SOH) waveguide geometries.

    Science.gov (United States)

    Vallaitis, Thomas; Bogatscher, Siegwart; Alloatti, Luca; Dumon, Pieter; Baets, Roel; Scimeca, Michelle L; Biaggio, Ivan; Diederich, François; Koos, Christian; Freude, Wolfgang; Leuthold, Juerg

    2009-09-28

    Geometry, nonlinearity, dispersion and two-photon absorption figure of merit of three basic silicon-organic hybrid waveguide designs are compared. Four-wave mixing and heterodyne pump-probe measurements show that all designs achieve high nonlinearities. The fundamental limitation of two-photon absorption in silicon is overcome using silicon-organic hybrid integration, with a five-fold improvement for the figure of merit (FOM). The value of FOM = 2.19 measured for silicon-compatible nonlinear slot waveguides is the highest value published.

  13. Hybrid photon detectors for the LHCb RICH

    CERN Document Server

    Eisenhardt, Stephan

    2006-01-01

    The LHCb Ring Imaging Cherenkov (RICH) counters use the pixel Hybrid Photon Detector (HPD) as a photo-sensitive device. Photo-electrons are produced in semi-transparent multi-alkali photo-cathode (S20) and are accelerated by a voltage of 20 kV onto a pixelated silicon anode. The anode is bump-bonded to the LHCBPIX1 pixel readout chip which amplifies and digitises the anode signals at the LHC speed of 40 MHz. Using a demagnification of five, the effective pixel size at the HPD window is 2.5 x 2.5 mm$^2$. Over the course of 18 months, 550 HPSs will undergo a quality-assurance programme to verify the specifications and to characterise the tubes. The tested parameters include the threshold and noise behaviour of the chip, the response to light emitting diode (LED) light, the demagnification of the electron optics, the leakage current and the depletion of the silicon sensor, the quality of the vacuum, the signal efficiency and the dark count rate. Results of tests of the first nine HPDs of the final design are pr...

  14. First detective quantum efficiency measurement of 500 {mu}m silicon hybrid pixel sensor with photon counting readout for X-ray medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Surre, Benjamin [Laboratoire de Biophysique medicale, University of Auvergne, Clermont-Ferrand (France)]. E-mail: Benjamin.surre@u-clermontl.fr; Caria, Mario [Laboratoire de Biophysique medicale, University of Auvergne, Clermont-Ferrand (France); Chaput, Julien [Laboratoire de Biophysique medicale, University of Auvergne, Clermont-Ferrand (France); Hassoun, Thierry [Laboratoire de Biophysique medicale, University of Auvergne, Clermont-Ferrand (France); Laverroux, Fabien [Laboratoire de Biophysique medicale, University of Auvergne, Clermont-Ferrand (France); Sarry, Laurent [Equipe de Recherche en Signal et Imagerie Medicale, EA3295, Clermont-Ferrand (France)

    2005-07-01

    We report the performances of a 500 {mu}m pixellated silicon sensor bonded to the photon counting chip Medipix2 [1]. In order to perform an absolute characterization of our detector, we measured both the pre-sampling MTF and NPS with respect to the International standard IEC-62220-1. From those data we have been able to extract the Detective Quantum Efficiency (DQE) and hence to assess the suitability of our detector for X-ray medical imaging purpose. Due to poor absorption of the Si at 70 kV the DQE peaked at 0.06 for null frequency. Nevertheless, these results are very promising since thicker Si or more absorbing material such as GaAs will soon be available.

  15. Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip

    CERN Document Server

    Schuck, Carsten; Fan, Linran; Ma, Xiao-Song; Poot, Menno; Tang, Hong X

    2015-01-01

    Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single photon detectors. The photonic circuit and detector fabrication processes are compatible with standa...

  16. Passive silicon photonic devices for microwave photonic signal processing

    Science.gov (United States)

    Wu, Jiayang; Peng, Jizong; Liu, Boyu; Pan, Ting; Zhou, Huanying; Mao, Junming; Yang, Yuxing; Qiu, Ciyuan; Su, Yikai

    2016-08-01

    We present our recent progress on microwave signal processing (MSP) using on-chip passive silicon photonic devices, including tunable microwave notch filtering/millimeter-wave (MMW) signal generation based on self-coupled micro-resonators (SCMRs), and tunable radio-frequency (RF) phase shifting implemented by a micro-disk resonator (MDR). These schemes can provide improved flexibility and performances of MSP. The experimental results are in good agreement with theoretical predictions, which validate the effectiveness of the proposed schemes.

  17. Multipurpose silicon photonics signal processor core.

    Science.gov (United States)

    Pérez, Daniel; Gasulla, Ivana; Crudgington, Lee; Thomson, David J; Khokhar, Ali Z; Li, Ke; Cao, Wei; Mashanovich, Goran Z; Capmany, José

    2017-09-21

    Integrated photonics changes the scaling laws of information and communication systems offering architectural choices that combine photonics with electronics to optimize performance, power, footprint, and cost. Application-specific photonic integrated circuits, where particular circuits/chips are designed to optimally perform particular functionalities, require a considerable number of design and fabrication iterations leading to long development times. A different approach inspired by electronic Field Programmable Gate Arrays is the programmable photonic processor, where a common hardware implemented by a two-dimensional photonic waveguide mesh realizes different functionalities through programming. Here, we report the demonstration of such reconfigurable waveguide mesh in silicon. We demonstrate over 20 different functionalities with a simple seven hexagonal cell structure, which can be applied to different fields including communications, chemical and biomedical sensing, signal processing, multiprocessor networks, and quantum information systems. Our work is an important step toward this paradigm.Integrated optical circuits today are typically designed for a few special functionalities and require complex design and development procedures. Here, the authors demonstrate a reconfigurable but simple silicon waveguide mesh with different functionalities.

  18. Silicon photonics design from devices to systems

    CERN Document Server

    Chrostowski, Lukas

    2015-01-01

    From design and simulation through to testing and fabrication, this hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs. In-depth discussion of real-world issues and fabrication challenges ensures that students are fully equipped for careers in industry. Step-by-step tutorials, straightforward examples, and illustrative source code fragments guide students through every aspect of the design process, providing a practical framework for developing and refining key skills. Offering industry-ready expertise, the text supports existing PDKs for CMOS UV-lithography foundry services (OpSIS, ePIXfab, imec, LETI, IME and CMC) and the development of new kits for proprietary processes and clean-room based research. Accompanied by additional online resources to support students, this is the perfect learning package for senior undergraduate and graduate students studying silicon photonics design, and academic and industrial researchers in...

  19. Dow Corning photonics: the silicon advantage in automotive photonics

    Science.gov (United States)

    Clapp, Terry V.; Paquet, Rene; Norris, Ann; Pettersen, Babette

    2005-02-01

    The Automotive Market offers several opportunities for Dow Corning to leverage the power of silicon-based materials. Dow Corning Photonics Solutions has a number of developments that may be attractive for the emergent photonics needs in automobiles, building on 40 years of experience as a leading Automotive supplier with a strong foundation of expertise and an extensive product offering- from encapsulents and highly reliable resins, adhesives, insulating materials and other products, ensuring that the advantage of silicones are already well-embedded in Automotive systems, modules and components. The recent development of LED encapsulants of exceptional clarity and stability has extended the potential for Dow Corning"s strength in Photonics to be deployed "in-car". Demonstration of board-level and back-plane solutions utilising siloxane waveguide technology offers new opportunities for systems designers to integrate optical components at low cost on diverse substrates. Coupled with work on simple waveguide technology for sensors and data communications applications this suite of materials and technology offerings is very potent in this sector. The harsh environment under hood and the very extreme thermal range that materials must sustain in vehicles due to both their engine and the climate is an applications specification that defines the siloxane advantage. For these passive optics applications the siloxanes very high clarity at the data-communications wavelengths coupled with extraordinary stability offers significant design advantage. The future development of Head-Up-Displays for instrumentation and data display will offer yet more opportunities to the siloxanes in Automotive Photonics.

  20. Active graphene–silicon hybrid diode for terahertz waves

    OpenAIRE

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The di...

  1. Advantages of gated silicon single photon detectors

    Science.gov (United States)

    Legré, Matthieu; Lunghi, Tommaso; Stucki, Damien; Zbinden, Hugo

    2013-05-01

    We present gated silicon single photon detectors based on two commercially available avalanche photodiodes (APDs) and one customised APD from ID Quantique SA. This customised APD is used in a commercially available device called id110. A brief comparison of the two commercial APDs is presented. Then, the charge persistence effect of all of those detectors that occurs just after a strong illumination is shown and discussed.

  2. Exploiting metamaterials, plasmonics and nanoantennas concepts in silicon photonics

    Science.gov (United States)

    Rodríguez-Fortuño, Francisco J.; Espinosa-Soria, Alba; Martínez, Alejandro

    2016-12-01

    The interaction of light with subwavelength metallic nano-structures is at the heart of different current scientific hot topics, namely plasmonics, metamaterials and nanoantennas. Research in these disciplines during the last decade has given rise to new, powerful concepts providing an unprecedented degree of control over light manipulation at the nanoscale. However, only recently have these concepts been used to increase the capabilities of light processing in current photonic integrated circuits (PICs), which traditionally rely only on dielectric materials with element sizes larger than the light wavelength. Amongst the different PIC platforms, silicon photonics is expected to become mainstream, since manufacturing using well-established CMOS processes enables the mass production of low-cost PICs. In this review we discuss the benefits of introducing recent concepts arisen from the fields of metamaterials, plasmonics and nanoantennas into a silicon photonics integrated platform. We review existing works in this direction and discuss how this hybrid approach can lead to the improvement of current PICs enabling novel and disruptive applications in photonics.

  3. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    Energy Technology Data Exchange (ETDEWEB)

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C. [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe (Germany); Koeber, S.; Freude, W., E-mail: christian.koos@kit.edu; Koos, C., E-mail: christian.koos@kit.edu [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen (Germany); Rembe, C. [Polytec GmbH, 76337 Waldbronn (Germany)

    2014-05-27

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB.

  4. Laser Integration on Silicon Photonic Circuits Through Transfer Printing

    Science.gov (United States)

    2017-03-10

    AFRL-AFOSR-UK-TR-2017-0019 Laser integration on silicon photonic circuits through transfer printing Gunther Roelkens UNIVERSITEIT GENT VZW Final...TYPE Final 3. DATES COVERED (From - To) 15 Sep 2015 to 14 Sep 2016 4. TITLE AND SUBTITLE Laser integration on silicon photonic circuits through...parallel integration of III-V lasers on silicon photonic integrated circuits. The report discusses the technological process that has been developed as

  5. DNA hybridization on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Shalini, E-mail: shalinsin@gmail.co [Electronic Materials Division, National Physical Laboratory (CSIR), Dr. K. S. Krishnan Marg, New Delhi-110012 (India); Faculty of Life Science, Aligarh Muslim University, Aligarh-202001 (India); Zack, Jyoti [Dr. B.R Ambedkar Center for Biomedical Research, University of Delhi, Delhi-110007 (India); Kumar, Dinesh; Srivastava, S.K.; Govind [Electronic Materials Division, National Physical Laboratory (CSIR), Dr. K. S. Krishnan Marg, New Delhi-110012 (India); Saluja, Daman [Dr. B.R Ambedkar Center for Biomedical Research, University of Delhi, Delhi-110007 (India); Khan, M.A. [Faculty of Life Science, Aligarh Muslim University, Aligarh-202001 (India); Singh, P.K. [Electronic Materials Division, National Physical Laboratory (CSIR), Dr. K. S. Krishnan Marg, New Delhi-110012 (India)

    2010-11-30

    Nanowire-based detection strategies provide promising new routes to bioanalysis and indeed are attractive to conventional systems because of their small size, high surface-to-volume ratios, electronic, and optical properties. A sequence-specific detection of single-stranded oligonucleotides using silicon nanowires (SiNWs) is demonstrated. The surface of the SiNWs is functionalized with densely packed organic monolayer via hydrosilylation for covalent attachment. Subsequently, deoxyribonucleic acid (DNA) is immobilized to recognize the complementary target DNA. The biomolecular recognition properties of the nanowires are tested via hybridization with {sup {gamma}P32} tagged complementary and non-complementary DNA oligonucleotides, showing good selectivity and reversibility. No significant non-specific binding to the incorrect sequences is observed. X-ray photoelectron spectroscopy, fluorescence imaging, and nanodrop techniques are used to characterize the modified SiNWs and covalent attachment with DNA. The results show that SiNWs are excellent substrates for the absorption, stabilization and detection of DNA sequences and could be used for DNA microarrays and micro fabricated SiNWs DNA sensors.

  6. Planar photonic crystal waveguides in silicon oxynitride

    DEFF Research Database (Denmark)

    Liu, Haoling; Frandsen, Lars Hagedorn; Borel, Peter Ingo;

    Most work on planar photonic crystals has been performed on structures based on semiconducting crystals such as Si and III-V compounds. Due to the high index contrast between the host material and the air holes (e.g., Si has n = 3.5), these structures exhibit a large photonic band gap. However......ON glasses with different indices between 1.46 and 1.77 and we are currently fabricating photonic crystals in SiON on a silica buffer layer on Si. Simulations show that a complete band gap can indeed be created for TE-polarised light in the SiON structures, making them promising candidates for new photonic......, at visible wavelengths they absorb light very strongly. In contrary, silicon oxynitride (SiON) glasses offer high transparency down to blue and ultraviolet wavelengths. Thus, SiON photonic crystal waveguides can open for new possibilities, e.g., within sensing and life sciences. We have fabricated Si...

  7. Two Photon Couplings of Hybrid Mesons

    CERN Document Server

    Page, P R

    1996-01-01

    A new formalism is developed for the two photon production of hybrid mesons via intermediate hadronic decays. In an adiabatic and non--relativistic context with spin 1 pair creation we obtain the first absolute estimates of unmixed hybrid production strengths to be small (0.03 - 3 eV) in relation to experimental meson widths (0.1 - 5 keV). Within this context, two photon collisions therefore strongly discriminate between hybrid and conventional meson wave function components at BaBar, Cleo II, LEP2 and LHC, filtering out non--gluonic components. Decay widths of unmixed hybrids are tiny. The formalism also induces conventional meson two photon widths roughly in agreement with experiment.

  8. Controlling photon emission from silicon for photonic applications

    Science.gov (United States)

    Kalem, Seref

    2014-03-01

    The importance of a photon source that would be compatible with silicon circuitry is crucial for data communication networks. A photon source with energies ranging from UV to near infrared can be activated in Si as originationg from defects related to dislocations, vacancies, strain induced band edge transitions and quantum confinement effects. Using an etching method developed in this work, one can also enhance selectively the UV-VIS, band edge emission and emissions at telecom wavelengths, which are tunable depending on surface treatment. Deuterium D2O etching favors near infrared emission with a characteristic single peak at 1320 nm at room temperature. The result offers an exciting solution to advanced microelectronics The method involves the treatment of Si surface by deuterium Deuterium containing acid vapor, resulting in a layer that emits at 1320 nm. Etching without deuterium, a strong band edge emission can be induced at 1150 nm or an emission at 1550 nm can be created depending on the engineered surface structure of silicon. Schottky diodes fabricated on treated surfaces exhibit a strong rectifying characteristics in both cases.

  9. Active graphene-silicon hybrid diode for terahertz waves.

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  10. Active graphene–silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

  11. Active graphene-silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  12. Silicon photonics: Design, fabrication, and characterization of on-chip optical interconnects

    Science.gov (United States)

    Hsieh, I.-Wei

    devices are quite different from those of electronic devices. Minimizing propagation losses by reducing sidewall roughness to nanometer scale over a device length of several millimeters or even centimeters has prompted researchers in academia and industry to refine the fabrication process. Chapter 3 of this thesis summarizes our efforts in fabricating silicon photonic devices using standard CMOS technology. Chapter 4 describes the characterization of nonlinear effects, including self-phase modulation (SPM), cross-phase modulation (XPM), and supercontinuum generation in silicon-wire waveguides. Silicon-wire waveguides are strip waveguides with submicron transverse dimensions, which allow strong light confinement inside the silicon core. This strong optical confinement, in addition to the large third-order nonlinear optical susceptibility of crystalline silicon, leads to a net nonlinearity which is several orders of magnitude higher than the nonlinearity of silica fiber. Significant nonlinear effects can be observed and characterized over a device length of only several millimeters in silicon wires with very small input power. These effects provide opportunities for engineers to design active silicon photonic devices which are compact and energy-efficient. Chapter 5 presents a realization of an integrated SOI optical isolator, which is a critical yet often overlooked component in photonic integrated circuits. This study shows the feasibility to make a hybrid garnet/SOI active device with very promising results. Finally, Chapter 6 summarizes our demonstration of transmitting terabit-scale data streams in silicon-wire waveguides, which is an important first-step towards enabling intra-chip interconnection networks with ultra-high bandwidths. Although the scope of this thesis is limited to providing only fractional views of the whole silicon photonics area, it provides enough references for interested readers to conduct further literature research in other aspects of silicon

  13. A complete design flow for silicon photonics

    Science.gov (United States)

    Pond, James; Cone, Chris; Chrostowski, Lukas; Klein, Jackson; Flueckiger, Jonas; Liu, Amy; McGuire, Dylan; Wang, Xu

    2014-05-01

    Broad adoption of silicon photonics technology for photonic integrated circuits requires standardized design flows that are similar to what is available for analog and mixed signal electrical circuit design. We have developed a design flow that combines mature electronic design automation (EDA) software with optical simulation software. An essential component of any design flow, whether electrical or photonic, is the ability to accurately simulate largescale circuits. This is particularly important when the behavior of the circuit is not trivially related to the individual component performance. While this is clearly the case for electronic circuits consisting of hundreds to billions of transistors, it is already becoming important in photonic circuits such as WDM transmitters, where signal cross talk needs to be considered, as well as optical cross-connect switches. In addition, optical routing to connect different components requires the introduction of additional waveguide sections, waveguide bends, and waveguide crossings, which affect the overall circuit performance. Manufacturing variability can also have dramatic circuit-level consequences that need to be simulated. Circuit simulations must rely on compact models that can accurately represent the behavior of each component, and the compact model parameters must be extracted from physical level simulation and experimental results. We show how large scale circuits can be simulated in both the time and frequency domains, including the effects of bidirectional and, where appropriate, multimode and multichannel photonic waveguides. We also show how active, passive and nonlinear individual components such as grating couplers, waveguides, splitters, filters, electro-optical modulators and detectors can be simulated using a combination of electrical and optical algorithms, and good agreement with experimental results can be obtained. We then show how parameters, with inclusion of fabrication process variations, can

  14. Spectroscopy-on-chip applications of silicon photonics

    Science.gov (United States)

    Baets, Roel; Subramanian, Ananth Z.; Dhakal, Ashim; Selvaraja, Shankar K.; Komorowska, Katarzyna; Peyskens, Frédéric; Ryckeboer, Eva; Yebo, Nebiyu; Roelkens, Gunther; Le Thomas, Nicolas

    2013-03-01

    In recent years silicon photonics has become a mature technology enabling the integration of a variety of optical and optoelectronic functions by means of advanced CMOS technology. While most efforts in this field have gone to telecom and datacom/interconnect applications, there is a rapidly growing interest in using the same technology for sensing applications, ranging from refractive index sensing to spectroscopic sensing. In this paper the prospect of silicon photonics for absorption, fluorescence and Raman spectroscopy on-a-chip will be discussed. To allow spectroscopy in the visible and near infrared the silicon photonics platform is extended with silicon nitride waveguides.

  15. Towards stable silicon nanoarray hybrid solar cells.

    Science.gov (United States)

    He, W W; Wu, K J; Wang, K; Shi, T F; Wu, L; Li, S X; Teng, D Y; Ye, C H

    2014-01-16

    Silicon nanoarray hybrid solar cells benefit from the ease of fabrication and the cost-effectiveness of the hybrid structure, and represent a new research focus towards the utilization of solar energy. However, hybrid solar cells composed of both inorganic and organic components suffer from the notorious stability issue, which has to be tackled before the hybrid solar cells could become a viable alternative for harvesting solar energy. Here we show that Si nanoarray/PEDOT:PSS hybrid solar cells with improved stability can be fabricated via eliminating the water inclusion in the initial formation of the heterojunction between Si nanoarray and PEDOT:PSS. The Si nanoarray hybrid solar cells are stable against rapid degradation in the atmosphere environment for several months without encapsulation. This finding paves the way towards the real-world applications of Si nanoarray hybrid solar cells.

  16. Recent results in silicon photonics at the University of Southampton

    Science.gov (United States)

    Reed, G. T.; Mashanovich, G. Z.; Gardes, F. Y.; Thomson, D. J.; Hu, Y.; Soler-Penades, J.; Nedeljkovic, M.; Khokhar, A. Z.; Thomas, P.; Littlejohns, C.; Ahmad, A.; Reynolds, S.; Topley, R.; Mitchell, C.; Stankovic, S.; Owens, N.; Chen, X.; Wilson, P. R.; Ke, L.; Ben Masaud, T. M.; Tarazona, A.; Chong, H.

    2014-03-01

    In this paper we will discuss recent results in our work on Silicon Photonics. This will include active and passive devices for a range of applications. Specifically we will include work on modulators and drivers, deposited waveguides, multiplexers, device integration and Mid IR silicon photonics. These devices and technologies are important both for established applications such as integrated transceivers for short reach interconnect, as well as emerging applications such as disposable sensors and mass market photonics.

  17. Glucose sensing by means of silicon photonics

    Science.gov (United States)

    Bockstaele, Ronny; Ryckeboer, Eva; Hattasan, Nannicha; De Koninck, Yannick; Muneeb, Muhammad; Verstuyft, Steven; Delbeke, Danaë; Bogaerts, Wim; Roelkens, Gunther; Baets, Roel

    2014-03-01

    Diabetes is a fast growing metabolic disease, where the patients suffer from disordered glucose blood levels. Monitoring the blood glucose values in combination with extra insulin injection is currently the only therapy to keep the glucose concentration in diabetic patients under control, minimizing the long-term effects of elevated glucose concentrations and improving quality of life of the diabetic patients. Implantable sensors allow continuous glucose monitoring, offering the most reliable data to control the glucose levels. Infrared absorption spectrometers offer a non-chemical measurement method to determine the small glucose concentrations in blood serum. In this work, a spectrometer platform based on silicon photonics is presented, allowing the realization of very small glucose sensors suitable for building implantable sensors. A proof-of-concept of a spectrometer with integrated evanescent sample interface is presented, and the route towards a fully implantable spectrometer is discussed.

  18. Silicon-based photonic integration beyond the telecommunication wavelength range

    OpenAIRE

    2014-01-01

    In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticles and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to gen...

  19. Nanostructured silicon for photonics from materials to devices

    CERN Document Server

    Gaburro, Z; Daldosso, N

    2006-01-01

    The use of light to channel signals around electronic chips could solve several current problems in microelectronic evolution including: power dissipation, interconnect bottlenecks, input/output from/to optical communication channels, poor signal bandwidth, etc. It is unfortunate that silicon is not a good photonic material: it has a poor light-emission efficiency and exhibits a negligible electro-optical effect. Silicon photonics is a field having the objective of improving the physical properties of silicon; thus turning it into a photonic material and permitting the full convergence of elec

  20. Pixel hybrid photon detector magnetic distortions characterization and compensation

    CERN Document Server

    Aglieri-Rinella, G; D'Ambrosio, Carmelo; Forty, Roger W; Gys, Thierry; Patel, Mitesh; Piedigrossi, Didier; Van Lysebetten, Ann

    2004-01-01

    The LHCb experiment requires positive kaon identification in the momentum range 2-100 GeV/c. This is provided by two ring imaging Cherenkov detectors. The stringent requirements on the photon detectors are fully satisfied by the novel pixel hybrid photon detector, HPD. The HPD is a vacuum tube with a quartz window, S20 photo-cathode, cross-focusing electron optics and a silicon anode encapsulated within the tube. The anode is a 32*256 pixels hybrid detector, with a silicon sensor bump-bonded onto a readout chip containing 8192 channels with analogue front-end and digital read-out circuitry. An external magnetic field influences the trajectory of the photoelectrons and could thereby degrade the inherent excellent space resolution of the HPD. The HPDs must be operational in the fringe magnetic field of the LHCb magnet. This paper reports on an extensive experimental characterization of the distortion effects. The characterization has allowed the development of parameterisations and of a compensation algorithm. ...

  1. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide.

    Science.gov (United States)

    Radulaski, Marina; Widmann, Matthias; Niethammer, Matthias; Zhang, Jingyuan Linda; Lee, Sang-Yun; Rendler, Torsten; Lagoudakis, Konstantinos G; Son, Nguyen Tien; Janzén, Erik; Ohshima, Takeshi; Wrachtrup, Jörg; Vučković, Jelena

    2017-02-24

    Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

  2. Photonic and plasmonic guiding modes in graphene-silicon photonic crystals

    CERN Document Server

    Gu, Tingyi; Hao, Yufeng; Li, Yilei; Hone, James; Wong, Chee Wei; Lavrinenko, Andrei; Low, Tony; Heinz, Tony F

    2015-01-01

    We report systematic studies of plasmonic and photonic guiding modes in large-area chemical-vapor-deposition-grown graphene on nanostructured silicon substrates. Light interaction in graphene with substrate photonic crystals can be classified into four distinct regimes depending on the photonic crystal lattice constant and the various modal wavelengths (i.e. plasmonic, photonic and free-space). By optimizing the design of the substrate, these resonant modes can magnify the graphene absorption in infrared wavelength, for efficient modulators, filters, sensors and photodetectors on silicon photonic platforms.

  3. Photonic and Plasmonic Guided Modes in Graphene-Silicon Photonic Crystals

    DEFF Research Database (Denmark)

    Gu, Tingyi; Andryieuski, Andrei; Hao, Yufeng;

    2015-01-01

    We report the results of systematic studies of plasmonic and photonic guided modes in large-area single-layer graphene integrated into a nanostructured silicon substrate. The interaction of light with graphene and substrate photonic crystals can be classified in distinct regimes depending...... on the relation of the photonic crystal lattice constant and the relevant modal wavelengths, that is, plasmonic, photonic, and free-space. By optimizing the design of the substrate, these resonant modes can increase the absorption of graphene in the infrared, facilitating enhanced performance of modulators......, filters, sensors, and photodetectors utilizing silicon photonic platforms....

  4. Silicon photonics for high-performance interconnection networks

    Science.gov (United States)

    Biberman, Aleksandr

    2011-12-01

    We assert in the course of this work that silicon photonics has the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems, and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. This work showcases that chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, enable unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of this work, we demonstrate such feasibility of waveguides, modulators, switches, and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. Furthermore, we leverage the unique properties of available silicon photonic materials to create novel silicon photonic devices, subsystems, network topologies, and architectures to enable unprecedented performance of these photonic interconnection networks and computing systems. We show that the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers. Furthermore, we explore the immense potential of all-optical functionalities implemented using parametric processing in the silicon platform, demonstrating unique methods that have the ability to revolutionize computation and communication. Silicon photonics

  5. CMOS-compatible fabrication, micromachining, and bonding strategies for silicon photonics

    Science.gov (United States)

    Heck, John; Jones, Richard; Paniccia, Mario J.

    2011-02-01

    The adoption of optical technologies by high-volume consumer markets is severely limited by the cost and complexity of manufacturing complete optical transceiver systems. This is in large part because "boutique" semiconductor fabrication processes are required for III-V lasers, modulators, and photodetectors; furthermore, precision bonding and painstaking assembly are needed to integrate or assemble such dissimilar devices and materials together. On the other hand, 200mm and 300mm silicon process technology has been bringing ever-increasing computing power to the masses by relentless cost reduction for several decades. Intel's silicon photonics program aims to marry this CMOS infrastructure and recent developments in MEMS manufacturing with the burgeoning field of microphotonics to make low cost, high-speed optical links ubiquitous. In this paper, we will provide an overview of several aspects of silicon photonics technology development in a CMOS fabrication line. First, we will describe fabrication strategies from the MEMS industry for micromachining silicon to create passive optical devices such as mirrors, waveguides, and facets, as well as alignment features. Second, we will discuss some of the challenges of fabricating hybrid III-V lasers on silicon, including such aspects as hybrid integration of InP-based materials with silicon using various bonding methods, etching of InP films, and contact formation using CMOS-compatible metals.

  6. Molecular detection via hybrid peptide-semiconductor photonic devices

    Science.gov (United States)

    Estephan, E.; Saab, M.-b.; Martin, M.; Cloitre, T.; Larroque, C.; Cuisinier, F. J. G.; Malvezzi, A. M.; Gergely, C.

    2011-03-01

    The aim of this work was to investigate the possibilities to support device functionality that includes strongly confined and localized light emission and detection processes within nano/micro-structured semiconductors for biosensing applications. The interface between biological molecules and semiconductor surfaces, yet still under-explored is a key issue for improving biomolecular recognition in devices. We report on the use of adhesion peptides, elaborated via combinatorial phage-display libraries for controlled placement of biomolecules, leading to user-tailored hybrid photonic systems for molecular detection. An M13 bacteriophage library has been used to screen 1010 different peptides against various semiconductors to finally isolate specific peptides presenting a high binding capacity for the target surfaces. When used to functionalize porous silicon microcavities (PSiM) and GaAs/AlGaAs photonic crystals, we observe the formation of extremely thin (detection was monitored via both linear and nonlinear optical measurements. Our linear reflectance spectra demonstrate an enhanced detection resolution via PSiM devices, when functionalized with the Si-specific peptide. Molecular capture at even lower concentrations (femtomols) is possible via the second harmonic generation of GaAs/AlGaAs photonic crystals when functionalized with GaAs-specific peptides. Our work demonstrates the outstanding value of adhesion peptides as interface linkers between semiconductors and biological molecules. They assure an enhanced molecular detection via both linear and nonlinear answers of photonic crystals.

  7. Hybrid materials for optics and photonics.

    Science.gov (United States)

    Lebeau, Benedicte; Innocenzi, Plinio

    2011-02-01

    The interest in organic-inorganic hybrids as materials for optics and photonics started more than 25 years ago and since then has known a continuous and strong growth. The high versatility of sol-gel processing offers a wide range of possibilities to design tailor-made materials in terms of structure, texture, functionality, properties and shape modelling. From the first hybrid material with optical functional properties that has been obtained by incorporation of an organic dye in a silica matrix, the research in the field has quickly evolved towards more sophisticated systems, such as multifunctional and/or multicomponent materials, nanoscale and self-assembled hybrids and devices for integrated optics. In the present critical review, we have focused our attention on three main research areas: passive and active optical hybrid sol-gel materials, and integrated optics. This is far from exhaustive but enough to give an overview of the huge potential of these materials in photonics and optics (254 references).

  8. Silicon nanocrystal-noble metal hybrid nanoparticles

    Science.gov (United States)

    Sugimoto, H.; Fujii, M.; Imakita, K.

    2016-05-01

    We report a novel and facile self-limiting synthesis route of silicon nanocrystal (Si NC)-based colloidally stable semiconductor-metal (gold, silver and platinum) hybrid nanoparticles (NPs). For the formation of hybrid NPs, we employ ligand-free colloidal Si NCs with heavily boron (B) and phosphorus (P) doped shells. By simply mixing B and P codoped colloidal Si NCs with metal salts, hybrid NPs consisting of metal cores and Si NC shells are spontaneously formed. We demonstrate the synthesis of highly uniform and size controllable hybrid NPs. It is shown that codoped Si NCs act as a reducing agent for metal salts and also as a protecting layer to stop metal NP growth. The process is thus self-limiting. The development of a variety of Si NC-based hybrid NPs is a promising first step for the design of biocompatible multifunctional NPs with broad material choices for biosensing, bioimaging and solar energy conversion.We report a novel and facile self-limiting synthesis route of silicon nanocrystal (Si NC)-based colloidally stable semiconductor-metal (gold, silver and platinum) hybrid nanoparticles (NPs). For the formation of hybrid NPs, we employ ligand-free colloidal Si NCs with heavily boron (B) and phosphorus (P) doped shells. By simply mixing B and P codoped colloidal Si NCs with metal salts, hybrid NPs consisting of metal cores and Si NC shells are spontaneously formed. We demonstrate the synthesis of highly uniform and size controllable hybrid NPs. It is shown that codoped Si NCs act as a reducing agent for metal salts and also as a protecting layer to stop metal NP growth. The process is thus self-limiting. The development of a variety of Si NC-based hybrid NPs is a promising first step for the design of biocompatible multifunctional NPs with broad material choices for biosensing, bioimaging and solar energy conversion. Electronic supplementary information (ESI) available: Additional TEM images and extinction spectra of Si-metal hybrid NPs are shown in Fig. S1

  9. Valley-protected backscattering suppression in silicon photonic graphene

    CERN Document Server

    Chen, Xiao-Dong

    2016-01-01

    In this paper, we study valley degree of freedom in all dielectric silicon photonic graphene. Photonic band gap opening physics under inversion symmetry breaking is revisited by the viewpoint of nonzero valley Chern number. Bulk valley modes with opposite orbital angular momentum are unveiled by inspecting time-varying electric fields. Topological transition is well illustrated through photonic Dirac Hamiltonian. Valley dependent edge states and the associated valley-protected backscattering suppression around Z-shape bend waveguide have been demonstrated.

  10. Spin-photon entanglement interfaces in silicon carbide defect centers

    Science.gov (United States)

    Economou, Sophia E.; Dev, Pratibha

    2016-12-01

    Optically active spins in solid-state systems can be engineered to emit photons that are entangled with the spin in the solid. This allows for applications such as quantum communications, quantum key distribution, and distributed quantum computing. Recently, there has been a strong interest in silicon carbide defects, as they emit very close to the telecommunication wavelength, making them excellent candidates for long range quantum communications. In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Distinct approaches are given for (i) single-photon and spin entanglement and (ii) the generation of long strings of entangled photons. The latter are known as cluster states and comprise a resource for measurement-based quantum information processing.

  11. PLAT4M: Progressing Silicon Photonics in Europe

    Directory of Open Access Journals (Sweden)

    Carmelo Scarcella

    2015-12-01

    Full Text Available Photonic integration is an appealing technology for emerging applications in communications, medical diagnostics and sensing. Silicon Photonics presents a highly attractive solution for large-scale photonic integration, principally because it is based on well-established CMOS-fabrication technologies. However, Silicon photonics can be difficult and expensive to implement, as it requires complex device design, fabrication and packaging capabilities. Photonic Libraries And Technology for Manufacturing (PLAT4M is a major European project that brings together the key capabilities required to develop solutions for a range of Silicon photonic-based applications. This paper will present an overview of the PLAT4M project. It will present, in detail, a key application demonstrator (Coherent Beam Combiner, highlighting the ability of the project team to develop an integrated Silicon Photonic sub-system, from design, through to device fabrication, packaging and final test. The paper also highlights the need to consider additional capabilities besides device fabrication, such as packaging, which are critical to achieving fully operational sub-systems.

  12. Fabrication and Characterization of On-Chip Integrated Silicon Photonic Bragg Grating and Photonic Crystal Cavity Thermometers

    CERN Document Server

    Klimov, Nikolai N; Ahmed, Zeeshan

    2015-01-01

    We report on the fabrication and characterization of photonic-based nanothermometers, a silicon photonic Bragg grating and photonic crystal cavity. When cladded with silicon dioxide layer the sensors have at least eight times better sensitivity compared to the sensitivity of conventional fiber Bragg grating sensors. We demonstrate that these photonic thermometers are a viable temperature sensing solution.

  13. Enhanced four-wave mixing in graphene-silicon slow-light photonic crystal waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Hao, E-mail: hz2299@columbia.edu, E-mail: tg2342@columbia.edu, E-mail: cww2104@columbia.edu [College of Electronic Information, Sichuan University, Chengdu 610064 (China); Optical Nanostructures Laboratory, Columbia University, New York, New York 10027 (United States); Gu, Tingyi, E-mail: hz2299@columbia.edu, E-mail: tg2342@columbia.edu, E-mail: cww2104@columbia.edu; McMillan, James F.; Wong, Chee Wei, E-mail: hz2299@columbia.edu, E-mail: tg2342@columbia.edu, E-mail: cww2104@columbia.edu [Optical Nanostructures Laboratory, Columbia University, New York, New York 10027 (United States); Petrone, Nicholas; Zande, Arend van der; Hone, James C. [Mechanical Engineering, Columbia University, New York, New York 10027 (United States); Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee [The Institute of Microelectronics, Singapore 117685 (Singapore); Feng, Guoying [College of Electronic Information, Sichuan University, Chengdu 610064 (China); Zhou, Shouhuan [College of Electronic Information, Sichuan University, Chengdu 610064 (China); North China Research Institute of Electro-Optics, Beijing 100015 (China)

    2014-09-01

    We demonstrate the enhanced four-wave mixing of monolayer graphene on slow-light silicon photonic crystal waveguides. 200-μm interaction length, a four-wave mixing conversion efficiency of −23 dB is achieved in the graphene-silicon slow-light hybrid, with an enhanced 3-dB conversion bandwidth of about 17 nm. Our measurements match well with nonlinear coupled-mode theory simulations based on the measured waveguide dispersion, and provide an effective way for all-optical signal processing in chip-scale integrated optics.

  14. Spin-orbit hybrid entanglement of photons and quantum contextuality

    CERN Document Server

    Karimi, Ebrahim; Slussarenko, Sergei; Piccirillo, Bruno; Marrucci, Lorenzo; Chen, Lixiang; She, Weilong; Franke-Arnold, Sonja; Padgett, Miles J; Santamato, Enrico; 10.1103/PhysRevA.82.022115

    2011-01-01

    We demonstrate electromagnetic quantum states of single photons and of correlated photon pairs exhibiting "hybrid" entanglement between spin and orbital angular momentum. These states are obtained from entangled photon pairs emitted by spontaneous parametric down conversion, by employing a $q$-plate for coupling the spin and orbital degrees of freedom of a photon. Entanglement and contextual quantum behavior (that is also non-local, in the case of photon pairs) is demonstrated by the reported violation of the Clauser-Horne-Shimony-Holt inequality. In addition a classical analog of the hybrid spin-orbit photonic entanglement is reported and discussed.

  15. Silicone-containing aqueous polymer dispersions with hybrid particle structure.

    Science.gov (United States)

    Kozakiewicz, Janusz; Ofat, Izabela; Trzaskowska, Joanna

    2015-09-01

    In this paper the synthesis, characterization and application of silicone-containing aqueous polymer dispersions (APD) with hybrid particle structure are reviewed based on available literature data. Advantages of synthesis of dispersions with hybrid particle structure over blending of individual dispersions are pointed out. Three main processes leading to silicone-containing hybrid APD are identified and described in detail: (1) emulsion polymerization of organic unsaturated monomers in aqueous dispersions of silicone polymers or copolymers, (2) emulsion copolymerization of unsaturated organic monomers with alkoxysilanes or polysiloxanes with unsaturated functionality and (3) emulsion polymerization of alkoxysilanes (in particular with unsaturated functionality) and/or cyclic siloxanes in organic polymer dispersions. The effect of various factors on the properties of such hybrid APD and films as well as on hybrid particles composition and morphology is presented. It is shown that core-shell morphology where silicones constitute either the core or the shell is predominant in hybrid particles. Main applications of silicone-containing hybrid APD and related hybrid particles are reviewed including (1) coatings which show specific surface properties such as enhanced water repellency or antisoiling or antigraffiti properties due to migration of silicone to the surface, and (2) impact modifiers for thermoplastics and thermosets. Other processes in which silicone-containing particles with hybrid structure can be obtained (miniemulsion polymerization, polymerization in non-aqueous media, hybridization of organic polymer and polysiloxane, emulsion polymerization of silicone monomers in silicone polymer dispersions and physical methods) are also discussed. Prospects for further developments in the area of silicone-containing hybrid APD and related hybrid particles are presented.

  16. Infrared transparent graphene heater for silicon photonic integrated circuits.

    Science.gov (United States)

    Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

    2016-04-18

    Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

  17. Ultra-high-speed Optical Signal Processing using Silicon Photonics

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

    on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show......— In supercomputers, the optical inter-connects are getting closer and closer to the processing cores. Today, a single supercomputer system has as many optical links as the whole worldwide web together, and it is envisaged that future computing chips will contain multiple electronic processor cores...... with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...

  18. Degenerate photon-pair generation in an ultracompact silicon photonic crystal waveguide.

    Science.gov (United States)

    He, Jiakun; Clark, Alex S; Collins, Matthew J; Li, Juntao; Krauss, Thomas F; Eggleton, Benjamin J; Xiong, Chunle

    2014-06-15

    We demonstrate degenerate, correlated photon-pair generation via slow-light-enhanced spontaneous four-wave mixing in a 96 μm long silicon photonic crystal waveguide. Our device represents a more than 50 times smaller footprint than silicon nanowires. We have achieved a coincidence-to-accidental ratio as high as 47 at a photon generation rate of 0.001 pairs per pulse and 14 at a photon generation rate of 0.023 pairs per pulse, which are both higher than the useful level of 10. This demonstration provides a path to generate indistinguishable photons in an ultracompact platform for future quantum photonic technologies.

  19. Photonic Crystal Cavities in Cubic Polytype Silicon Carbide Films

    CERN Document Server

    Radulaski, Marina; Buckley, Sonia; Rundquist, Armand; Provine, J; Alassaad, Kassem; Ferro, Gabriel; Vučković, Jelena

    2013-01-01

    We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1250 - 1600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

  20. Comment to "Nonreciprocal Light Propagation in a Silicon Photonic Circuit"

    CERN Document Server

    Baets, Roel; Melloni, Andrea; Popović, Miloš; Vanwolleghem, Mathias

    2011-01-01

    In the article "Nonreciprocal Light Propagation in a Silicon Photonic Circuit" (Science 333, 729-733 (2011) a nonreciprocal waveguide system based on a combination of silicon, dielectrics and metals is reported. In this Comment it is explained that the interpretation with respect to nonreciprocity in this paper is incorrect and conflicts with the fundamental Lorentz reciprocity theorem. It is further pointed out that a previous publication already introduced the device concept.

  1. High-Q silicon carbide photonic-crystal cavities

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jonathan Y. [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Institute of Optics, University of Rochester, Rochester, New York 14627 (United States)

    2015-01-26

    We demonstrate one-dimensional photonic-crystal nanobeam cavities in amorphous silicon carbide. The fundamental mode exhibits intrinsic optical quality factor as high as 7.69 × 10{sup 4} with mode volume ∼0.60(λ/n){sup 3} at wavelength 1.5 μm. A corresponding Purcell factor value of ∼10{sup 4} is the highest reported to date in silicon carbide optical cavities. The device exhibits great potential for integrated nonlinear photonics and cavity nano-optomechanics.

  2. Ion implantation in silicon to facilitate testing of photonic circuits

    Science.gov (United States)

    Reed, Graham T.; Milosevic, Milan M.; Chen, Xia; Cao, Wei; Littlejohns, Callum G.; Wang, Hong; Khokhar, Ali Z.; Thomson, David J.

    2017-02-01

    In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. We demonstrate the principle of a series of devices for wafers scale testing and have also implemented the ion implantation based refractive index change in integrated photonics devices for device trimming.

  3. Widely tunable Vernier ring laser on hybrid silicon.

    Science.gov (United States)

    Hulme, J C; Doylend, J K; Bowers, J E

    2013-08-26

    A hybrid silicon tunable Vernier ring laser is designed and fabricated by integration of two intra-cavity ring resonators, hybrid III-V-on-silicon gain elements, and resistive heaters for thermal tuning. Thermal tuning of more than 40 nm is demonstrated with side mode suppression ratio greater than 35 dB and linewidth of 338 kHz.

  4. Phase sensitive amplification in silicon photonic crystal waveguides

    CERN Document Server

    Yanbing,; Husko, Chad; Schroder, Jochen; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Eggleton, Benjamin J

    2013-01-01

    We experimentally demonstrate phase sensitive amplification (PSA) in a silicon photonic crystal waveguide based on pump-degenerate four-wave mixing. An 11 dB phase extinction ratio is obtained in a record compact 196 {\\mu}m nanophotonic device due to broadband slow-light, in spite of the presence of two-photon absorption and free-carriers. Numerical calculations show good agreement with the experimental results.

  5. Phase-sensitive amplification in silicon photonic crystal waveguides.

    Science.gov (United States)

    Zhang, Yanbing; Husko, Chad; Schröder, Jochen; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Eggleton, Benjamin J

    2014-01-15

    We experimentally demonstrate phase-sensitive amplification in a silicon photonic crystal waveguide based on pump-degenerate four-wave mixing. An 11 dB phase-extinction ratio is obtained in a record compact 196 μm nanophotonic device due to broadband slow light, in spite of the presence of two-photon absorption and free carriers. Numerical calculations show good agreement with the experimental results.

  6. All-optical mode unscrambling on a silicon photonic chip

    CERN Document Server

    Morichetti, Francesco; Grillanda, Stefano; Peserico, Nicola; Carminati, Marco; Ciccarella, Pietro; Ferrari, Giorgio; Guglielmi, Emanuele; Sorel, Marc; Melloni, Andrea

    2015-01-01

    We demonstrate a 4-channel silicon photonic MIMO demultiplexer performing all-optical unscrambling of four mixed modes. Mode unscrambling is achieved by means of a cascaded Mach-Zehnder architecture that is sequentially reconfigured by individually monitoring each stage though integrated transparent detectors, namely Contact Less Integrated Photonic Probes (CLIPPs). Robust demultiplexing of 10 Gbit/s channels with less than -20 dB crosstalk is achieved.

  7. Nanostructured porous silicon photonic crystal for applications in the infrared

    OpenAIRE

    G. Recio-Sánchez; Torres-Costa, V.; Manso-Silván, M.; R. J. Martín-Palma

    2012-01-01

    In the last decades great interest has been devoted to photonic crystals aiming at the creation of novel devices which can control light propagation. In the present work, two-dimensional (2D) and three-dimensional (3D) devices based on nanostructured porous silicon have been fabricated. 2D devices consist of a square mesh of 2 μm wide porous silicon veins, leaving 5×5 μm square air holes. 3D structures share the same design although multilayer porous silicon veins are used instead, providing ...

  8. High Power Broadband Multispectral Source on a Hybrid Silicon Chip

    Science.gov (United States)

    2017-03-14

    silicon photonic network on chip,” Optica 3(7), 785–786 (2016). [8] Stanton, E. J., Heck, M. J. R., Bovington, J., Spott, A., and Bowers, J. E...Hutchinson, J., Shin, J.-H., Fish, G., and Fang, A., “Integrated silicon photonic laser sources for telecom and datacom,” in [National Fiber Optic...Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom -band-derived pump source,” Nat. Photon. 4(8), 561–564 (2010

  9. Large-scale quantum photonic circuits in silicon

    Science.gov (United States)

    Harris, Nicholas C.; Bunandar, Darius; Pant, Mihir; Steinbrecher, Greg R.; Mower, Jacob; Prabhu, Mihika; Baehr-Jones, Tom; Hochberg, Michael; Englund, Dirk

    2016-08-01

    Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today's classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes. Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards

  10. On-chip generation and demultiplexing of quantum correlated photons using a silicon-silica monolithic photonic integration platform.

    Science.gov (United States)

    Matsuda, Nobuyuki; Karkus, Peter; Nishi, Hidetaka; Tsuchizawa, Tai; Munro, William J; Takesue, Hiroki; Yamada, Koji

    2014-09-22

    We demonstrate the generation and demultiplexing of quantum correlated photons on a monolithic photonic chip composed of silicon and silica-based waveguides. Photon pairs generated in a nonlinear silicon waveguide are successfully separated into two optical channels of an arrayed-waveguide grating fabricated on a silica-based waveguide platform.

  11. A 25 Gb/s Silicon Photonics Platform

    CERN Document Server

    Baehr-Jones, Tom; Ayazi, Ali; Pinguet, Thierry; Streshinsky, Matt; Harris, Nick; Li, Jing; He, Li; Gould, Mike; Zhang, Yi; Lim, Andy Eu-Jin; Liow, Tsung-Yang; Teo, Selin Hwee-Gee; Lo, Guo-Qiang; Hochberg, Michael

    2012-01-01

    Silicon has attracted attention as an inexpensive and scalable material system for photonic-electronic, system-on-chip development. For this, a platform with both photodetectors and modulators working at high speeds, with excellent cross-wafer uniformity, is needed. We demonstrate an optical-lithography, wafer-scale photonics platform with 25 Gb/s operation. We also demonstrate modulation with an ultra-low drive voltage of 1 Vpp at 25 Gb/s. We demonstrate attractive cross-wafer uniformity, and provide detailed information about the device geometry. Our platform is available to the community as part of a photonics shuttle service.

  12. Hybrid vertical cavity laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide.......A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide....

  13. Integrated optical frequency shifter in silicon-organic hybrid (SOH) technology.

    Science.gov (United States)

    Lauermann, M; Weimann, C; Knopf, A; Heni, W; Palmer, R; Koeber, S; Elder, D L; Bogaerts, W; Leuthold, J; Dalton, L R; Rembe, C; Freude, W; Koos, C

    2016-05-30

    We demonstrate for the first time a waveguide-based frequency shifter on the silicon photonic platform using single-sideband modulation. The device is based on silicon-organic hybrid (SOH) electro-optic modulators, which combine conventional silicon-on-insulator waveguides with highly efficient electro-optic cladding materials. Using small-signal modulation, we demonstrate frequency shifts of up to 10 GHz. We further show large-signal modulation with optimized waveforms, enabling a conversion efficiency of -5.8 dB while suppressing spurious side-modes by more than 23 dB. In contrast to conventional acousto-optic frequency shifters, our devices lend themselves to large-scale integration on silicon substrates, while enabling frequency shifts that are several orders of magnitude larger than those demonstrated with all-silicon serrodyne devices.

  14. Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser

    CERN Document Server

    Moscoso-Mártir, Alvaro; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Azadeh, Saeed Sharif; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2016-01-01

    We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gbps is shown to be compatible with standard 7% overhead hard decision forward error correction. Silicon Photonics transmitter and receiver chips are hybridly integrated with driver and receiver electronics. A detailed link model is derived and verified. Particular emphasis is placed on accurate system level modeling of laser RIN, SOA amplified spontaneous emission noise and receiver noise. The impact of the electrical receiver bandwidth and non-Gaussian statistics on level dependent amplified spontaneous emission noise are investigated in detail. The channel count scalability as limited by SOA saturation is further an...

  15. Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

    Science.gov (United States)

    Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

    2017-02-08

    We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

  16. Silicon photonic switch technology for optical networks in telecom and datacom areas

    Science.gov (United States)

    Nakamura, Shigeru; Yanagimachi, Shigeyuki; Takeshita, Hitoshi; Tajima, Akio

    2017-01-01

    As a promising platform technology for optical switches, silicon photonics is recently attracting much attention. In this paper, we demonstrate compact 8 × 8 silicon photonic switch modules with low loss, low polarization sensitivity, and low cross-talk properties. An optical circuit including 152 thermo-optical switch elements and spot size converters were formed within a silicon chip size of 12 mm × 14 mm. The developed module where a silicon photonic chip was assembled with a fiber array showed about 6-dB average excess optical loss, including optical coupling loss, on all 64 paths of the 8 × 8 optical switch. Measured polarization dependent loss was about 0.6 dB on average over 64 paths and cross-talk was less than -35 dB. These optical switch modules are intended for applying to ROADMs in telecom optical networks, but, the port count extensibility using multiple compact modules and the faster switching capability of the optical switch are also useful for datacenter applications where hybrid network scheme with electronic packet switches and optical circuit switches is intensively investigated.

  17. Controlling light with high-Q silicon photonic crystal nanocavities: Photon confinement, nonlinearity and coherence

    Science.gov (United States)

    Yang, Xiaodong

    The strong light localization and long photon lifetimes in two-dimensional silicon photonic crystal nanocavities with high quality factor (Q ) and subwavelength modal volume (V) significantly enhance the light-matter interactions, presenting many opportunities to explore new functionalities in silicon nanophotonic integrated circuits for on-chip all-optical information processing, optical computation and optical communications. This thesis will focus on the design, nanofabrication, and experimental characterization of both passive and active silicon nanophotonic devices based on two-dimensional high-Q silicon photonic crystal nanocavities. Three topics of controlling light with these high-Q nanocavities will be presented, including (1) photon confinement mechanism and cavity resonance tuning, (2) enhancement of optical nonlinearities, and (3) all-optical analogue to coherent interferences. The first topic is photon confinement in two-dimensional high- Q silicon photonic crystal nanocavities. In Chapter 2, the role of Q/V as the figure of merit for the enhanced light-matter interaction in optical microcavities and nanocavities is explained and different types of high-Q optical microcavities and nanocavities are reviewed with an emphasis on two-dimensional photonic crystal nanocavities. Then the nanofabrication process and the Q characterization are illustrated for the two-dimensional silicon photonic crystal nanocavities. In Chapter 3, the post-fabrication digital resonance tuning of high-Q silicon photonic crystal nanocavities using atomic layer deposition is proposed and demonstrated, with wide tuning range and precise control of cavity resonances while preserving high quality factors. The second topic is the enhancement of optical nonlinearities in two-dimensional high-Q silicon photonic crystal nanocavities, including stimulated Raman scattering and thermo-optical nonlinearities. In Chapter 4, the enhanced stimulated Raman scattering for low threshold Raman

  18. Focused ion beam milling of photonic crystals in bulk silicon

    NARCIS (Netherlands)

    Hu, Wenbin; Ridder, de René M.; Tong, Xing-Lin

    2009-01-01

    Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The eff

  19. Integrated programmable photonic filter on the silicon -on- insulator platform

    DEFF Research Database (Denmark)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe

    2014-01-01

    We propose and demonstrate a silicon - on - insulator (SOI) on - chip programmable filter based on a four - tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heater s. We further demonstrate...

  20. Scaling silicon photonic switch fabrics for data center interconnection networks.

    Science.gov (United States)

    Nikolova, Dessislava; Rumley, Sébastien; Calhoun, David; Li, Qi; Hendry, Robert; Samadi, Payman; Bergman, Keren

    2015-01-26

    With the rapidly increasing aggregate bandwidth requirements of data centers there is a growing interest in the insertion of optically interconnected networks with high-radix transparent optical switch fabrics. Silicon photonics is a particularly promising and applicable technology due to its small footprint, CMOS compatibility, high bandwidth density, and the potential for nanosecond scale dynamic connectivity. In this paper we analyze the feasibility of building silicon photonic microring based switch fabrics for data center scale optical interconnection networks. We evaluate the scalability of a microring based switch fabric for WDM signals. Critical parameters including crosstalk, insertion loss and switching speed are analyzed, and their sensitivity with respect to device parameters is examined. We show that optimization of physical layer parameters can reduce crosstalk and increase switch fabric scalability. Our analysis indicates that with current state-of-the-art devices, a high radix 128 × 128 silicon photonic single chip switch fabric with tolerable power penalty is feasible. The applicability of silicon photonic microrings for data center switching is further supported via review of microring operations and control demonstrations. The challenges and opportunities for this technology platform are discussed.

  1. Silicon graphene waveguide tunable broadband microwave photonics phase shifter

    CERN Document Server

    Capmany, Jose; Muñoz, Pascual

    2013-01-01

    We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifte based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360 degree radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.

  2. A compact refractometric sensor based on grated silicon photonic wires

    NARCIS (Netherlands)

    Kauppinen, L.J.; Hoekstra, Hugo; de Ridder, R.M.

    2009-01-01

    Grated silicon photonic wires for refractometric applications have been fabricated using a 248-nm deep UV lithography. It is shown experimentally, that a device with length of only 180m has an index sensitivity of $10^{-6}$ assuming a detector power resolution of 1%. It is also demonstrated that the

  3. A compact refractometric sensor based on grated silicon photonic wires

    NARCIS (Netherlands)

    Kauppinen, L.J.; Hoekstra, H.J.W.M.; Ridder, de R.M.

    2009-01-01

    Grated silicon photonic wires for refractometric applications have been fabricated using a 248-nm deep UV lithography. It is shown experimentally, that a device with length of only 180m has an index sensitivity of $10^{-6}$ assuming a detector power resolution of 1%. It is also demonstrated that the

  4. Slow-light enhanced correlated photon pair generation in a silicon photonic crystal waveguide.

    Science.gov (United States)

    Xiong, C; Monat, Christelle; Clark, Alex S; Grillet, Christian; Marshall, Graham D; Steel, M J; Li, Juntao; O'Faolain, Liam; Krauss, Thomas F; Rarity, John G; Eggleton, Benjamin J

    2011-09-01

    We report the generation of correlated photon pairs in the telecom C-band at room temperature from a dispersion-engineered silicon photonic crystal waveguide. The spontaneous four-wave mixing process producing the photon pairs is enhanced by slow-light propagation enabling an active device length of less than 100 μm. With a coincidence to accidental ratio of 12.8 at a pair generation rate of 0.006 per pulse, this ultracompact photon pair source paves the way toward scalable quantum information processing realized on-chip.

  5. Observation of soliton compression in silicon photonic crystals

    Science.gov (United States)

    Blanco-Redondo, A.; Husko, C.; Eades, D.; Zhang, Y.; Li, J.; Krauss, T.F.; Eggleton, B.J.

    2014-01-01

    Solitons are nonlinear waves present in diverse physical systems including plasmas, water surfaces and optics. In silicon, the presence of two photon absorption and accompanying free carriers strongly perturb the canonical dynamics of optical solitons. Here we report the first experimental demonstration of soliton-effect pulse compression of picosecond pulses in silicon, despite two photon absorption and free carriers. Here we achieve compression of 3.7 ps pulses to 1.6 ps with crystal waveguide and an ultra-sensitive frequency-resolved electrical gating technique to detect the ultralow energies in the nanostructured device. Strong agreement with a nonlinear Schrödinger model confirms the measurements. These results further our understanding of nonlinear waves in silicon and open the way to soliton-based functionalities in complementary metal-oxide-semiconductor-compatible platforms. PMID:24423977

  6. Photonic hyperuniform networks by silicon double inversion of polymer templates

    CERN Document Server

    Muller, Nicolas; Marichy, Catherine; Scheffold, Frank

    2016-01-01

    Hyperuniform disordered networks belong to a peculiar class of structured materials predicted to possess partial and complete photonic bandgaps for relatively moderate refractive index contrasts. The practical realization of such photonic designer materials is challenging however, as it requires control over a multi-step fabcrication process on optical length scales. Here we report the direct-laser writing of hyperuniform polymeric templates followed by a silicon double inversion procedure leading to high quality network structures made of polycrystalline silicon. We observe a pronounced gap in the shortwave infrared centered at a wavelength of $\\lambda_{\\text{Gap}}\\simeq $ 2.5 $\\mu$m, in nearly quantitative agreement with numerical simulations. In the experiments the typical structural length scale of the seed pattern can be varied between 2 $\\mu$m and 1.54 $\\mu$m leading to a blue-shift of the gap accompanied by an increase of the silicon volume filling fraction.

  7. Silicon Photonic Biosensors for Lab-on-a-Chip Applications

    Directory of Open Access Journals (Sweden)

    Laura M. Lechuga

    2008-06-01

    Full Text Available In the last two decades, we have witnessed a remarkable progress in the development of biosensor devices and their application in areas such as environmental monitoring, biotechnology, medical diagnostics, drug screening, food safety, and security, among others. The technology of optical biosensors has reached a high degree of maturity and several commercial products are on the market. But problems of stability, sensitivity, and size have prevented the general use of optical biosensors for real field applications. Integrated photonic biosensors based on silicon technology could solve such drawbacks, offering early diagnostic tools with better sensitivity, specificity, and reliability, which could improve the effectiveness of in-vivo and in-vitro diagnostics. Our last developments in silicon photonic biosensors will be showed, mainly related to the development of portable and highly sensitive integrated photonic sensing platforms.

  8. Optical signal processing by silicon photonics

    CERN Document Server

    Ahmed, Jameel; Adeel, Freeha; Hussain, Ashiq

    2014-01-01

    The main objective of this book is to make respective graduate students understand the nonlinear effects inside SOI waveguide and possible applications of SOI waveguides in this emerging research area of optical fibre communication. This book focuses on achieving successful optical frequency shifting by Four Wave Mixing (FWM) in silicon-on-insulator (SOI) waveguide by exploiting a nonlinear phenomenon.

  9. Photon counting techniques with silicon avalanche photodiodes.

    Science.gov (United States)

    Dautet, H; Deschamps, P; Dion, B; Macgregor, A D; Macsween, D; McIntyre, R J; Trottier, C; Webb, P P

    1993-07-20

    The properties of avalanche photodiodes and associated electronics required for photon counting in the Geiger and the sub-Geiger modes are reviewed. When the Geiger mode is used, there are significant improvements reported in overall photon detection efficiencies (approaching 70% at 633 nm), and a timing jitter (under 200 ps) is achieved with passive quenching at high overvoltages (20-30 V). The results obtained by using an active-mode fast quench circuit capable of switching overvoltages as high as 15 V (giving photon detection efficiencies in the 50% range) with a dead time of less than 50 ns are reported. Larger diodes (up to 1 mm in diameter) that are usable in the Geiger mode and that have quantum efficiencies over 80% in the 500-800-nm range are also reported.

  10. The pixel hybrid photon detectors for the LHCb-RICH project

    CERN Document Server

    Gys, Thierry

    2001-01-01

    This paper describes a hybrid photon detector with integrated silicon pixel readout to be used in the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 5. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The paper starts with the general specification of the baseline option. Followed by a summary of the main results achieved so far during the R&D phase. It concludes with a description of the remaining work towards the final photon detector. (17 refs).

  11. Ultrafast laser functionalized rare phased gold-silicon/silicon oxide nanostructured hybrid biomaterials.

    Science.gov (United States)

    Premnath, P; Tan, B; Venkatakrishnan, K

    2015-12-01

    We introduce a hybrid nanostructured biomaterial that is a combination of rare phases of immiscible gold and silicon oxide, functionalized via ultrafast laser synthesis. For the first time, we show cancer controlling properties of rare phases of gold silicides, which include Au7Si, Au5Si, Au0.7Si2.3 and Au8Si2. Conventionally, pure forms of gold and silicon/silicon oxide are extensively employed in targeted therapy and drug delivery systems due to their unique properties. While silicon and silicon oxide nanoparticles have shown biocompatibility, gold nanoparticles show conflicting results based on their size and material properties. Several studies have shown that gold and silicon combinations produce cell controlling properties, however, these studies were not able to produce a homogenous combination of gold and silicon, owing to its immiscibility. A homogenous combination of gold and silicon may potentially enable properties that have not previously been reported. We describe rare phased gold-silicon oxide nanostructured hybrid biomaterials and its unique cancer controlling properties, owing to material properties, concentration, size and density. The gold-silicon oxide nanostructured hybrid is composed of individual gold-silicon oxide nanoparticles in various concentrations of gold and silicon, some nanoparticles possess a gold-core and silicon-shell like structure. The individual nanoparticles are bonded together forming a three dimensional nanostructured hybrid. The interaction of the nanostructured hybrids with cervical cancer cells showed a 96% reduction in 24h. This engineered nanostructured hybrid biomaterial presents significant potential due to the combination of immiscible gold and silicon oxide in varying phases and can potentially satiate the current vacuum in cancer therapy.

  12. Multiple photon excited SF6 interaction with silicon surfaces

    Science.gov (United States)

    Chuang, T. J.

    1981-01-01

    Infrared laser induced SF6-silicon interactions have been studied and the surface reaction yields have been determined as a function of the laser frequency, the laser intensity, and the gas pressure in both perpendicular and parallel beam incidences on the solid surfaces. The results clearly show that vibrationally excited SF6 molecules promoted by CO2 laser pulses are very reactive to silicon, particularly when the solid is simultaneously exposed to the intense ir radiation. The laser excitation of the Si substrate alone cannot cause the heterogeneous reaction to occur. The present gas-solid system thus provides an example which clearly establishes the direct correlation between surface reactivity and vibrational activation. Additional experimental measurements also demonstrate that the thermal fluorine atoms generated by SF6 multiple photon dissociation at high laser intensities can react with silicon to form volatile product. The study thus provides further insight into the silicon-fluorine reaction dynamics.

  13. Silicon photonic crystals and spontaneous emission

    NARCIS (Netherlands)

    Dood, Michiel Jacob Andries de

    2002-01-01

    Photonic crystals, i.e. materials that have a periodic variation in refractive index, form an interesting new class of materials that can be used to modify spontaneous emission and manipulate optical modes in ways that were impossible so far. This thesis is divided in three parts. Part I discusses

  14. Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

    CERN Document Server

    Ohtsu, Motoichi

    2016-01-01

    This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

  15. Silicon Photonics Platform for Government Applications

    Science.gov (United States)

    2016-03-31

    S. Davids, Douglas C. Trotter, Andrew T. Pomerene, Andrew L. Starbuck , Nicholas J. D. Martinez, Nick Boynton, and Patrick B. Chu Sandia National...devices and carrier effects for high-speed devices. The optimal choice of switch to use depends critically on the application. 5. SUB-SYSTEMS...Wavelength Control As the effective index of refraction of silicon is temperature and fabrication sensitive, small changes in either cause the device

  16. Nanostructured Porous Silicon Photonic Crystal for Applications in the Infrared

    Directory of Open Access Journals (Sweden)

    G. Recio-Sánchez

    2012-01-01

    Full Text Available In the last decades great interest has been devoted to photonic crystals aiming at the creation of novel devices which can control light propagation. In the present work, two-dimensional (2D and three-dimensional (3D devices based on nanostructured porous silicon have been fabricated. 2D devices consist of a square mesh of 2 μm wide porous silicon veins, leaving 5×5 μm square air holes. 3D structures share the same design although multilayer porous silicon veins are used instead, providing an additional degree of modulation. These devices are fabricated from porous silicon single layers (for 2D structures or multilayers (for 3D structures, opening air holes in them by means of 1 KeV argon ion bombardment through the appropriate copper grids. For 2D structures, a complete photonic band gap for TE polarization is found in the thermal infrared range. For 3D structures, there are no complete band gaps, although several new partial gaps do exist in different high-symmetry directions. The simulation results suggest that these structures are very promising candidates for the development of low-cost photonic devices for their use in the thermal infrared range.

  17. Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

    2015-09-21

    Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

  18. Solar power conversion efficiency in modulated silicon nanowire photonic crystals

    Science.gov (United States)

    Deinega, Alexei; John, Sajeev

    2012-10-01

    It is suggested that using only 1 μm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power conversion efficiency in the range of 15%-20% can be achieved. Choosing a specific modulation profile provides antireflection, light trapping, and back-reflection over broad angles in targeted spectral regions for high efficiency power conversion without solar tracking. Solving both Maxwell's equations in the 3D photonic crystal and the semiconductor drift-diffusion equations in each nanowire, we identify optimal junction and contact geometries and study the influence of the nanowire surface curvature on solar cell efficiency. We demonstrate that suitably modulated nanowires enable 20% efficiency improvement over their straight counterparts made of an equivalent amount of silicon. We also discuss the efficiency of a tandem amorphous and crystalline silicon nanowire photonic crystal solar cell. Opportunities for "hot carrier" collection and up-conversion of infrared light, enhanced by photonic crystal geometry, facilitate further improvements in power efficiency.

  19. Optical absorption enhancement in a hybrid system photonic crystal - thin substrate for photovoltaic applications.

    Science.gov (United States)

    Buencuerpo, Jeronimo; Munioz-Camuniez, Luis E; Dotor, Maria L; Postigo, Pablo A

    2012-07-02

    A hybrid approach for light trapping using photonic crystal nanostructures (nanorods, nanopillars or nanoholes) on top of an ultra thin film as a substrate is presented. The combination of a nanopatterned layer with a thin substrate shows an enhanced optical absorption than equivalent films without patterning and can compete in performance with nanostructured systems without a substrate. The designs are tested in four relevant materials: amorphous silicon (a-Si), crystalline silicon (Si), gallium arsenide (GaAs) and indium phosphide (InP). A consistent enhancement is observed for all of the materials when using a thin hybrid system (300 nm) even compared to the non patterned thin film with an anti-reflective coating (ARC). A realistic solar cell structure composed of a hybrid system with a layer of indium tin oxide (ITO) an ARC and a back metal layer is performed, showing an 18% of improvement for the nanostructured device.

  20. Photon-counting techniques with silicon avalanche photodiodes

    Science.gov (United States)

    Dautet, Henri; Deschamps, P.; Dion, Bruno; MacGregor, Andrew D.; MacSween, D.; McIntyre, Robert J.; Trottier, C.; Webb, Paul P.

    1993-05-01

    Silicon avalanche photodiodes (APD) have been used for photon counting for a number of years. This paper reviews their properties and the associated electronics required for photon counting in the Geiger mode. Significant improvements are reported in overall photon detection efficiencies (approaching 75% at 633 nm), and timing jitter (under 200 ps) achieved at high over-voltages (20 - 30 V). Results obtained using an active-mode fast quench circuit capable of switching over-voltages as high as 20 V (giving photon detection efficiencies in the 50% range), are reported with a dead-time of less than 50 ns. Larger diodes (up to 1 mm diameter), usable in the Geiger mode, which have quantum efficiencies over 80% in the 500 - 800 nm range also are reported.

  1. Photon BLOCH oscillations in porous silicon optical superlattices.

    Science.gov (United States)

    Agarwal, V; del Río, J A; Malpuech, G; Zamfirescu, M; Kavokin, A; Coquillat, D; Scalbert, D; Vladimirova, M; Gil, B

    2004-03-01

    We report the first observation of oscillations of the electromagnetic field in an optical superlattice based on porous silicon. These oscillations are an optical equivalent of well-known electronic Bloch oscillations in crystals. Elementary cells of our structure are composed by microcavities whose coupling gives rise to the extended collective modes forming optical minigaps and minibands. By varying thicknesses of the cavities along the structure axis, we have created an effective electric field for photons. A very high quality factor of the confined optical state of the Wannier-Stark ladder may allow lasing in porous silicon-based superlattices.

  2. Silicon-Nitride Platform for Narrowband Entangled Photon Generation

    CERN Document Server

    Ramelow, Sven; Clemmen, Stéphane; Orquiza, Daniel; Luke, Kevin; Lipson, Michal; Gaeta, Alexander L

    2015-01-01

    CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising fo...

  3. Silicon photonic crystal nanostructures for refractive index sensing

    DEFF Research Database (Denmark)

    Dorfner, Dominic; Hürlimann, T.; Zabel, T.

    2008-01-01

    The authors present the fabrication and optical investigation of Silicon on Insulator photonic crystal drop-filters for use as refractive index sensors. Two types of defect nanocavities (L3 and H1-r) are embedded between two W1 photonic crystal waveguides to evanescently route light at the cavity...... mode frequency between input and output waveguides. Optical characterization of the structures in air and various liquids demonstrate detectivities in excess of n=n = 0:018 and n=n = 0:006 for the H1-r and L3 cavities, respectively. The measured cavity-frequencies and detector refractive index...

  4. Passive Temperature Stabilization of Silicon Photonic Devices Using Liquid Crystals

    Directory of Open Access Journals (Sweden)

    Joanna Ptasinski

    2014-03-01

    Full Text Available In this work we explore the negative thermo-optic properties of liquid crystal claddings for passive temperature stabilization of silicon photonic integrated circuits. Photonic circuits are playing an increasing role in communications and computing, but they suffer from temperature dependent performance variation. Most existing techniques aimed at compensation of thermal effects rely on power hungry Joule heating. We show that integrating a liquid crystal cladding helps to minimize the effects of a temperature dependent drift. The advantage of liquid crystals lies in their high negative thermo-optic coefficients in addition to low absorption at the infrared wavelengths.

  5. Fabrication of silicon inverse woodpile photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Hermatschweiler, Martin; Wegener, Martin [DFG-Center for Functional Nanostructures (CFN) and Institut fuer Angewandte Physik, Universitaet Karlsruhe (TH), 76131 Karlsruhe (Germany); Ozin, Geoffrey A. [Department of Chemistry, University of Toronto, Toronto, Ontario M5S 3H6 (Canada); Ledermann, Alexandra; Freymann, Georg von [Institut fuer Nanotechnologie, Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, 76021 Karlsruhe (Germany)

    2007-07-01

    We fabricate silicon inverse woodpile structures for the first time. Direct laser writing of polymeric templates and a novel silicon-singleinversion procedure lead to structures with gap/midgap ratios of 14.2% centered at 2.5 {mu}m wavelength. First, polymer templates are fabricated by direct laser writing or other means. Next, we deposit a thin silica coating via atomic layer deposition (ALD) on the polymer and - without removing the polymer - infiltrate the composite structure with Si via Si chemical vapor deposition (CVD). The silica shell provides sufficient and reliable stabilization for the high temperature CVD process. Finally, the silica is etched out and the polymer is calcined in air, leading to a Si inverse woodpile structure. Optical measurements and comparison to bandstructure and scattering-matrix calculations reveal a gap/midgap ratio of 14.2% centered at 2.5 {mu}m. An optimized structure could open a band gap with a gap/midgap ratio of up to 20.5%.

  6. Spectrally resolved single-photon imaging with hybrid superconducting - nanophotonic circuits

    CERN Document Server

    Kahl, O; Kovalyuk, V; Vetter, A; Lewes-Malandrakis, G; Nebel, C; Korneev, A; Goltsman, G; Pernice, W

    2016-01-01

    The detection of individual photons is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multi-color imaging techniques, such as single photon spectroscopy, fluorescence resonance energy transfer microscopy and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz. We demonstrate multi-detector devices for telecommunication and visible wavelengths and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting-nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imagi...

  7. Inverted cone-shaped all-silicon photonic nanoresonators

    CERN Document Server

    Schmitt, Sebastian W; Christiansen, Silke H

    2015-01-01

    A novel type of photonic resonator based on a silicon nanostructure with inverted cone geometry is demonstrated. After excitation with visible light, individual inverted nanocones show near-infrared photonic modes with a high quality factor (Q). A thorough mode analysis reveals that this type of nanocavity geometry sustains a multitude of strongly confined whispering gallery modes, which are characterized by efficient and directional, vertical out-coupling of near-infrared light. Investigating the relation between the inverted nanocone geometry and the mode formation leads to simple design rules that permit to control the number and wavelength of the hosted modes. The unique optical features of the suitably designed all-Si inverted nanocone resonators will raise great interest in vibrant research fields such as silicon nanolasing, optoelectronics, sensing or solar light concentration.

  8. Dry-film polymer waveguide for silicon photonics chip packaging.

    Science.gov (United States)

    Hsu, Hsiang-Han; Nakagawa, Shigeru

    2014-09-22

    Polymer waveguide made by dry film process is demonstrated for silicon photonics chip packaging. With 8 μm × 11.5 μm core waveguide, little penalty is observed up to 25 Gbps before or after the light propagate through a 10-km long single-mode fiber (SMF). Coupling loss to SMF is 0.24 dB and 1.31 dB at the polymer waveguide input and output ends, respectively. Alignment tolerance for 0.5 dB loss increase is +/- 1.0 μm along both vertical and horizontal directions for the coupling from the polymer waveguide to SMF. The dry-film polymer waveguide demonstrates promising performance for silicon photonics chip packaging used in next generation optical multi-chip module.

  9. Parametric study of dielectric loaded surface plasmon polariton add-drop filters for hybrid silicon/plasmonic optical circuitry

    Science.gov (United States)

    Dereux, A.; Hassan, K.; Weeber, J.-C.; Djellali, N.; Bozhevolnyi, S. I.; Tsilipakos, O.; Pitilakis, A.; Kriezis, E.; Papaioannou, S.; Vyrsokinos, K.; Pleros, N.; Tekin, T.; Baus, M.; Kalavrouziotis, D.; Giannoulis, G.; Avramopoulos, H.

    2011-01-01

    Surface plasmons polaritons are electromagnetic waves propagating along the surface of a conductor. Surface plasmons photonics is a promising candidate to satisfy the constraints of miniaturization of optical interconnects. This contribution reviews an experimental parametric study of dielectric loaded surface plasmon waveguides ring resonators and add-drop filters within the perspective of the recently suggested hybrid technology merging plasmonic and silicon photonics on a single board (European FP7 project PLATON "Merging Plasmonic and Silicon Photonics Technology towards Tb/s routing in optical interconnects"). Conclusions relevant for dielectric loaded surface plasmon switches to be integrated in silicon photonic circuitry will be drawn. They rely on the opportunity offered by plasmonic circuitry to carry optical signals and electric currents through the same thin metal circuitry. The heating of the dielectric loading by the electric current enables to design low foot-print thermo-optical switches driving the optical signal flow.

  10. Time and charge characterization of Hamamatsu Photonics silicon photomultipliers

    Directory of Open Access Journals (Sweden)

    Galetta G.

    2014-03-01

    Full Text Available Two Hamamatsu Photonics silicon photomultipliers (SiPM with same cell size 50×50 µm2 and different sensitive area (1×1 mm2 vs. 3×3 mm2 have been characterized in charge and time by means of a 409 nm pico-laser. The time resolution was studied for the detection of few photoelectrons. The results obtained are relevant for the employment of SiPM in ring imaging Cherenkov detectors (RICH.

  11. PECASE: All-Optical Photonic Integrated Circuits in Silicon

    Science.gov (United States)

    2011-01-14

    Soltani , and A. Adibi, “High Quality Planar Silicon Nitride Microdisk Resonators for Integrated Photonics in the Visible Wavelength Range,” Optics...contrast, high-Q resonators in chalcogenide glass for sensing,” Opt. Lett. 33, 2500–2502 (2008). [4] B. Momeni, S. Yegnanarayanan, M. Soltani , A. A...lightwave circuits,” J. Lightwave Technol. 17(11), 2032–2038 (1999). [14] B. Momeni, J. Huang, M. Soltani , M. Askari, S. Mohammadi, M. Rakhshandehroo, and

  12. Silicon bulk micromachined hybrid dimensional artifact.

    Energy Technology Data Exchange (ETDEWEB)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  13. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    CERN Document Server

    Ding, Yunhong; Dalgaard, Kjeld; Ye, Feihong; Asif, Rameez; Gross, Simon; Withford, Michael J; Galili, Michael; Morioka, Toshio; Oxenlowe, Leif Katsuo

    2016-01-01

    Space division multiplexing using multicore fibers is becoming a more and more promising technology. In space-division multiplexing fiber network, the reconfigurable switch is one of the most critical components in network nodes. In this paper we for the first time demonstrate reconfigurable space-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-on-insulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained for the whole C-band. 1 Tb/s/core transmission over a 2-km 7-core fiber and space-division multiplexing swi...

  14. Silicon and germanium mid-infrared photonics

    Science.gov (United States)

    Mashanovich, G. Z.; Reed, G. T.; Nedeljkovic, M.; Soler Penades, J.; Mitchell, C. J.; Khokhar, A. Z.; Littlejohns, C. J.; Stankovic, S.; Chen, X.; Shen, L.; Healy, N.; Peacock, A. C.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Ackert, J. J.; Knights, A. P.; Gardes, F. Y.; Thomson, D. J.

    2016-02-01

    We present three main material platforms: SOI, suspended Si and Ge on Si. We report low loss SOI waveguides (rib, strip, slot) with losses of ~1dB/cm. We also show efficient modulators and detectors realized in SOI, as well as filters and multiplexers. To extend transparency of SOI waveguides, bottom oxide cladding can be removed. We have fabricated low loss passive devices in a suspended platform that employ subwavelength gratings. Ge on Si material can have larger transparency range than suspended Si. We have designed passive devices in this platform, demonstrated all optical modulation and carried out two photon absorption measurements. We have also investigated theoretically free carrier optical modulation in Ge.

  15. A silicon carbide room-temperature single-photon source

    Science.gov (United States)

    Castelletto, S.; Johnson, B. C.; Ivády, V.; Stavrias, N.; Umeda, T.; Gali, A.; Ohshima, T.

    2014-02-01

    Over the past few years, single-photon generation has been realized in numerous systems: single molecules, quantum dots, diamond colour centres and others. The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics and measurement theory. An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing. Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2×106 counts s-1) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices.

  16. Broadband tunable hybrid photonic crystal-nanowire light emitter

    CERN Document Server

    Wilhelm, Christophe E; Xiong, Qihua; Soci, Cesare; Lehoucq, Gaëlle; Dolfi, Daniel; De Rossi, Alfredo; Combrié, Sylvain

    2015-01-01

    We integrate about 100 single Cadmium Selenide semiconductor nanowires in self-standing Silicon Nitride photonic crystal cavities in a single processing run. Room temperature measurements reveal a single narrow emission linewidth, corresponding to a Q-factor as large as 5000. By varying the structural parameters of the photonic crystal, the peak wavelength is tuned, thereby covering the entire emission spectral range of the active material. A very large spectral range could be covered by heterogeneous integration of different active materials.

  17. Twin photon pairs in a high-Q silicon microresonator

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, Steven; Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Jiang, Wei C. [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States)

    2015-07-27

    We report the generation of high-purity twin photon pairs through cavity-enhanced non-degenerate four-wave mixing (FWM) in a high-Q silicon microdisk resonator. Twin photon pairs are created within the same cavity mode and are consequently expected to be identical in all degrees of freedom. The device is able to produce twin photons at telecommunication wavelengths with a pair generation rate as large as (3.96 ± 0.03) × 10{sup 5} pairs/s, within a narrow bandwidth of 0.72 GHz. A coincidence-to-accidental ratio of 660 ± 62 was measured, the highest value reported to date for twin photon pairs, at a pair generation rate of (2.47 ± 0.04) × 10{sup 4} pairs/s. Through careful engineering of the dispersion matching window, we have reduced the ratio of photons resulting from degenerate FWM to non-degenerate FWM to less than 0.15.

  18. High-power thulium lasers on a silicon photonics platform.

    Science.gov (United States)

    Li, Nanxi; Purnawirman, P; Su, Zhan; Salih Magden, E; Callahan, Patrick T; Shtyrkova, Katia; Xin, Ming; Ruocco, Alfonso; Baiocco, Christopher; Ippen, Erich P; Kärtner, Franz X; Bradley, Jonathan D B; Vermeulen, Diedrik; Watts, Michael R

    2017-03-15

    Mid-infrared laser sources are of great interest for various applications, including light detection and ranging, spectroscopy, communication, trace-gas detection, and medical sensing. Silicon photonics is a promising platform that enables these applications to be integrated on a single chip with low cost and compact size. Silicon-based high-power lasers have been demonstrated at 1.55 μm wavelength, while in the 2 μm region, to the best of our knowledge, high-power, high-efficiency, and monolithic light sources have been minimally investigated. In this Letter, we report on high-power CMOS-compatible thulium-doped distributed feedback and distributed Bragg reflector lasers with single-mode output powers up to 267 and 387 mW, and slope efficiencies of 14% and 23%, respectively. More than 70 dB side-mode suppression ratio is achieved for both lasers. This work extends the applicability of silicon photonic microsystems in the 2 μm region.

  19. Characterization of silicon avalanche photodiodes for photon correlation measurements. 2: Active quenching.

    Science.gov (United States)

    Brown, R G; Jones, R; Rarity, J G; Ridley, K D

    1987-06-15

    We continue examination of the photon correlation properties of silicon avalanche photodiodes operated in photon-counting mode by extending their operation from that of passive quenching(1) to active quenching, yielding shorter dead time and higher frequency operation.

  20. Signature of a three-dimensional photonic band gap observed on silicon inverse woodpile photonic crystals

    CERN Document Server

    Huisman, Simon R; Woldering, Léon A; Leistikow, Merel D; Mosk, Allard P; Vos, Willem L

    2010-01-01

    We have studied the reflectivity of CMOS-compatible three-dimensional silicon inverse woodpile photonic crystals at near-infrared frequencies. Polarization-resolved reflectivity spectra were obtained from two orthogonal crystal surfaces corresponding to 1.88 pi sr solid angle. The spectra reveal broad peaks with high reflectivity up to 67 % that are independent of the spatial position on the crystals. The spectrally overlapping reflectivity peaks for all directions and polarizations form the signature of a broad photonic band gap with a relative bandwidth up to 16 %. This signature is supported with stopgaps in plane wave bandstructure calculations and with the frequency region of the expected band gap.

  1. FACT - How stable are the silicon photon detectors?

    CERN Document Server

    Bretz, T; Buß, J; Dorner, D; Einecke, S; Eisenacher, D; Hildebrand, D; Knoetig, M L; Krähenbühl, T; Lustermann, W; Mannheim, K; Meier, K; Neise, D; Overkemping, A -K; Paravac, A; Pauss, F; Rhode, W; Ribordy, M; Steinbring, T; Temme, F; Thaele, J; Vogler, P; Walter, R; Weitzel, Q; Zänglein, M

    2013-01-01

    The First G-APD Cherenkov telescope (FACT) is the first telescope using silicon photon detectors (G-APD aka. SiPM). The use of Silicon devices promise a higher photon detection efficiency, more robustness and higher precision than photo-multiplier tubes. Since the properties of G-APDs depend on auxiliary parameters like temperature, a feedback system adapting the applied voltage accordingly is mandatory. In this presentation, the feedback system, developed and in operation for FACT, is presented. Using the extraction of a single photon-equivalent (pe) spectrum as a reference, it can be proven that the sensors can be operated with very high precision. The extraction of the single-pe, its spectrum up to 10\\,pe, its properties and their precision, as well as their long-term behavior during operation are discussed. As a by product a single pulse template is obtained. It is shown that with the presented method, an additional external calibration device can be omitted. The presented method is essential for the appl...

  2. Design and simulation of silicon photonic schematics and layouts

    Science.gov (United States)

    Chrostowski, Lukas; Lu, Zeqin; Flueckiger, Jonas; Wang, Xu; Klein, Jackson; Liu, Amy; Jhoja, Jaspreet; Pond, James

    2016-05-01

    Electronic circuit designers commonly start their design process with a schematic, namely an abstract representation of the physical circuit. In integrated photonics on the other hand, it is common for the design to begin at the physical component level, and create a layout by connecting components with interconnects. In this paper, we discuss how to create a schematic from the physical layout via netlist extraction, which enables circuit simulations. Post-layout extraction can also be used to predict how fabrication variability and non-uniformity will impact circuit performance. This is based on the component position information, compact models that are parameterized for dimensional variations, and manufacturing variability models such as a simulated wafer thickness map. This final step is critical in understanding how real-world silicon photonic circuits will behave. We present an example based on treating the ring resonator as a circuit. A silicon photonics design kit, as described here, is available for download at http://github.com/lukasc-ubc/SiEPIC_EBeam_PDK.

  3. Hybrid photovoltaics based on semiconductor nanocrystals and amorphous silicon.

    Science.gov (United States)

    Sun, Baoquan; Findikoglu, Alp T; Sykora, Milan; Werder, Donald J; Klimov, Victor I

    2009-03-01

    Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and, perhaps, increased conversion efficiency in the ultraviolet region through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC energy states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared region. The hybrid silicon/PbS NC solar cells show external quantum efficiencies of approximately 7% at infrared energies and 50% in the visible and a power conversion efficiency of up to 0.9%. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs.

  4. A review on single photon sources in silicon carbide

    Science.gov (United States)

    Lohrmann, A.; Johnson, B. C.; McCallum, J. C.; Castelletto, S.

    2017-03-01

    This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

  5. Flexible and tunable silicon photonic circuits on plastic substrates

    CERN Document Server

    Chen, Yu; Li, Mo

    2012-01-01

    Flexible microelectronics has shown tremendous promise in a broad spectrum of applications, especially those that cannot be addressed by conventional microelectronics in rigid materials and constructions1-3. These unconventional yet important applications range from flexible consumer electronics to conformal sensor arrays and biomedical devices. A recent successful paradigm shift in implementing flexible electronics is to physically transfer and bond highly integrated devices made in high-quality, crystalline semiconductor materials on to plastic materials4-8. Here we demonstrate a flexible form of silicon photonics on plastic substrates using the transfer-and-bond fabrication method. Photonic circuits including interferometers and resonators have been transferred onto flexible plastic substrates with preserved functionalities and performance. By mechanically deforming the flexible substrates, the optical characteristics of the devices can be tuned reversibly over a remarkably large range. The demonstration o...

  6. Plasmonic and Photonic Modes Excitation in Graphene on Silicon Photonic Crystal Membrane

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Gu, Tingyi; Hao, Yufeng

    Graphene is a perspective material platform for the infrared (from far-IR to near-IR) optoelectronics due to possibility of extremely confined surface plasmons polaritons excitation at long wavelengths, and large (for atomically thin layer) optical absorbance of 2.3% in the short wavelengths rang...... characterization. Measured data are well correlated with the numerical analysis. Combined graphene – silicon photonic crystal membranes can find applications for infrared absorbers, modulators, filters, sensors and photodetectors.......Graphene is a perspective material platform for the infrared (from far-IR to near-IR) optoelectronics due to possibility of extremely confined surface plasmons polaritons excitation at long wavelengths, and large (for atomically thin layer) optical absorbance of 2.3% in the short wavelengths ranges....... Being deposited on a silicon photonic crystal membrane graphene serves as a highly promising system for modern optoelectronics with rich variety of possible regimes. Depending on the relation between the photonic crystal lattice constant and wavelengths (plasmonic, photonic and free-space) we identify...

  7. Negative refraction at telecommunication wavelengths through plasmon-photon hybridization.

    Science.gov (United States)

    Kalusniak, Sascha; Sadofev, Sergey; Henneberger, Fritz

    2015-11-16

    We demonstrate negative refraction at telecommunication wavelengths through plasmon-photon hybridization on a simple microcavity with metallic mirrors. Instead of using conventional metals, the plasmonic excitations are provided by a heavily doped semiconductor which enables us to tune them into resonance with the infrared photon modes of the cavity. In this way, the dispersion of the resultant hybrid cavity modes can be widely adjusted. In particular, negative dispersion and negative refraction at telecommunication wavelengths on an all-ZnO monolithical cavity are demonstrated.

  8. Maximizing Photoluminescence Extraction in Silicon Photonic Crystal Slabs.

    Science.gov (United States)

    Mahdavi, Ali; Sarau, George; Xavier, Jolly; Paraïso, Taofiq K; Christiansen, Silke; Vollmer, Frank

    2016-04-26

    Photonic crystal modes can be tailored for increasing light matter interactions and light extraction efficiencies. These PhC properties have been explored for improving the device performance of LEDs, solar cells and precision biosensors. Tuning the extended band structure of 2D PhC provides a means for increasing light extraction throughout a planar device. This requires careful design and fabrication of PhC with a desirable mode structure overlapping with the spectral region of emission. We show a method for predicting and maximizing light extraction from 2D photonic crystal slabs, exemplified by maximizing silicon photoluminescence (PL). Systematically varying the lattice constant and filling factor, we predict the increases in PL intensity from band structure calculations and confirm predictions in micro-PL experiments. With the near optimal design parameters of PhC, we demonstrate more than 500-fold increase in PL intensity, measured near band edge of silicon at room temperature, an enhancement by an order of magnitude more than what has been reported.

  9. ESSenTIAL: EPIXfab services specifically targeting (SME) industrial takeup of advanced silicon photonics

    NARCIS (Netherlands)

    Pozo Torres, J.M.; Kumar, P.; Lo Cascio, D.M.R.; Khanna, A.; Dumon, P.; Delbeke, D.; Baets, R.; Fournier, M.; Fedeli, J.-M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Tian, H.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Zhang, X.; Gale, D.

    2012-01-01

    ePIXfab brings silicon photonics within reach of European small and medium sized enterprises, thereby building on its track record and its integration into Europractice. To this end, ePIXfab offers affordable access to standardized active and passive silicon photonic IC and packaging technology, a p

  10. Performance Studies of Pixel Hybrid Photon Detectors for the LHCb RICH Counters

    CERN Document Server

    Aglieri Rinella, G; Piedigrossi, D; Van Lysebetten, A

    2004-01-01

    The Pixel Hybrid Photon Detector is a vacuum tube with a multi-alkali photo cathode, high voltage cross-focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a readout CMOS electronic chip fully encapsulated in the device. The Pixel HPD fulfils the requirements of the Ring Imaging Cherenkov counters of the LHCb experiment at LHC. The performances of the Pixel HPD will be discussed with reference to laboratory measurements, Cherenkov light imaging in recent beam tests, image distortions due to a magnetic field.

  11. Performance studies of pixel hybrid photon detectors for the LHCb RICH counters

    CERN Document Server

    Aglieri-Rinella, G; Piedigrossi, D; Van Lysebetten, A

    2006-01-01

    The Pixel Hybrid Photon Detector is a vacuum tube with a multi-alkali photo cathode, high voltage cross-focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a readout CMOS electronic chip fully encapsulated in the device. The Pixel HPD fulfils the requirements of the Ring Imaging Cherenkov counters of the LHCb experiment at LHC. The performances of the Pixel HPD will be discussed with reference to laboratory measurements, Cherenkov light imaging in recent beam tests, image distortions due to a magnetic field.

  12. Silicon photonic crystals doped with colloidally synthesized lead salt semiconductors nanocrystals.

    Science.gov (United States)

    Gutman, Nadav; Armon, Akiva; Shandalov, Michael; Osherov, Anna; Golan, Yuval; Sa'ar, Amir

    2009-06-01

    The fabrication of two-dimensional and three-dimensional silicon photonic crystals doped with lead salt nanocrystals is reported. The silicon based photonic crystals of macro-porous silicon are fabricated by electro-chemical etching via masked silicon wafers with the periodicity along the third dimension is achieved by modulating the anodization current and voltage. The chemical solution deposition technique has been utilized to deposit thin layers of lead salts (PbS and PbSe) nanocrystals into the pores. Infrared transmission measurements revealed a considerable red-shift of the photonic band gap in a good agreement with numerical calculations.

  13. Photonic hybrid assembly through flexible waveguides

    Science.gov (United States)

    Wörhoff, K.; Prak, A.; Postma, F.; Leinse, A.; Wu, K.; Peters, T. J.; Tichem, M.; Amaning-Appiah, B.; Renukappa, V.; Vollrath, G.; Balcells-Ventura, J.; Uhlig, P.; Seyfried, M.; Rose, D.; Santos, R.; Leijtens, X. J. M.; Flintham, B.; Wale, M.; Robbins, D.

    2016-05-01

    Fully automated, high precision, cost-effective assembly technology for photonic packages remains one of the main challenges in photonic component manufacturing. Next to the cost aspect the most demanding assembly task for multiport photonic integrated circuits (PICs) is the high-precision (±0.1 μm) alignment and fixing required for optical I/O in InP PICs, even with waveguide spot size conversion. In a European research initiative - PHASTFlex - we develop and investigate an innovative, novel assembly concept, in which the waveguides in a matching TriPleX interposer PIC are released during fabrication to make them movable. After assembly of both chips by flip-chip bonding on a common carrier, TriPleX based actuators and clamping functions position and fix the flexible waveguides with the required accuracy.

  14. The mid-IR silicon photonics sensor platform (Conference Presentation)

    Science.gov (United States)

    Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

    2017-02-01

    Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

  15. Photonic crystal enhanced silicon cell based thermophotovoltaic systems.

    Science.gov (United States)

    Yeng, Yi Xiang; Chan, Walker R; Rinnerbauer, Veronika; Stelmakh, Veronika; Senkevich, Jay J; Joannopoulos, John D; Soljacic, Marin; Čelanović, Ivan

    2015-02-09

    We report the design, optimization, and experimental results of large area commercial silicon solar cell based thermophotovoltaic (TPV) energy conversion systems. Using global non-linear optimization tools, we demonstrate theoretically a maximum radiative heat-to-electricity efficiency of 6.4% and a corresponding output electrical power density of 0.39 W cm(-2) at temperature T = 1660 K when implementing both the optimized two-dimensional (2D) tantalum photonic crystal (PhC) selective emitter, and the optimized 1D tantalum pentoxide - silicon dioxide PhC cold-side selective filter. In addition, we have developed an experimental large area TPV test setup that enables accurate measurement of radiative heat-to-electricity efficiency for any emitter-filter-TPV cell combination of interest. In fact, the experimental results match extremely well with predictions of our numerical models. Our experimental setup achieved a maximum output electrical power density of 0.10W cm(-2) and radiative heat-to-electricity efficiency of 1.18% at T = 1380 K using commercial wafer size back-contacted silicon solar cells.

  16. The Silicon Vertex Tracker for the Heavy Photon Search Experiment

    CERN Document Server

    Adrian, Per Hansson

    2015-01-01

    The Heavy Photon Search (HPS) is a new, dedicated experiment at Thomas Jefferson National Accelerator Facility (JLab) to search for a massive vector boson, the heavy photon (a.k.a. dark photon, \\Aprimebold{}), in the mass range 20-500~MeV/c$^{2}$ and with a weak coupling to ordinary matter. An \\Aprimebold{} can be radiated from an incoming electron as it interacts with a charged nucleus in the target, accessing a large open parameter space where the \\Aprimebold{} is relatively long-lived, leading to displaced vertices. HPS searches for these displaced \\Aprimebold{} to e$^+$e$^-$ decays using actively cooled silicon microstrip sensors with fast readout electronics placed immediately downstream of the target and inside a dipole magnet to instrument a large acceptance with a relatively small detector. With typical particle momenta of 0.5-2~GeV/c, the low material budget of 0.7\\% $\\mathbf{X_0}$ per tracking layer is key to limiting the dominant multiple scattering uncertainty and allowing efficient separation of ...

  17. A hybrid silicon-PDMS optofluidic platform for sensing applications

    NARCIS (Netherlands)

    Testa, G.; Persichetti, G.; Sarro, P.M.; Bernini, R.

    2014-01-01

    A hybrid silicon-poly(dimethysiloxane) (PDMS) optofluidic platform for lab-on-a-chip applications is proposed. A liquid-core waveguide with a self-aligned solid-core waveguide and a microfluidic device are integrated with a multilayer approach, resulting in a three-dimensional device assembly. The

  18. Organic layers on silicon result in a unique hybrid fet

    NARCIS (Netherlands)

    Faber, E.J.; Albers, M.; Smet, de L.C.P.M.; Olthuis, W.; Zuilhof, H.; Sudholter, E.J.R.; Bergveld, P.; Berg, van den A.

    2008-01-01

    A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent e

  19. Hybrid hydrogel photonic barcodes for multiplex detection of tumor markers.

    Science.gov (United States)

    Xu, Yueshuang; Zhang, Xiaoping; Luan, Chengxin; Wang, Huan; Chen, Baoan; Zhao, Yuanjin

    2017-01-15

    Barcodes-based suspension array have for demonstrated values in multiplex assay of tumor markers. Photonic barcodes which are encoded by their characteristic reflection peaks are the important supports for suspension array due to their stable code, low fluorescent background and high surface-volume ratio. Attempts to develop this technology tend to improve the function of the photonic barcodes. Here, we present a new type of hybrid hydrogel photonic barcodes for efficient multiplex assays. This photonic barcodes are hybrid inverse opal hydrogel composed of poly(ethylene glycol) diacrylate (PEG-DA) and agarose. The polymerized PEG-DA hydrogel could guarantee the stabilities of the inverse opal structure and its resultant code, while the agarose could offer active chemical groups for the probe immobilization and homogeneous water surrounding for the bioassay. In addition, the interconnected pores inverse opal structure could provide channels for biomolecules diffusing and reaction into the voids of barcodes. These features imparted the hybrid hydrogel photonic barcodes with limits of detection (LOD) of 0.78ng/mL for carcinoembryonic antigen (CEA) and 0.21ng/mL for α-fetoprotein (AFP), respectively. It was also demonstrated that the proposed barcodes showed acceptable accuracy and detection reproducibility, and the results were in acceptable agreement with those from common clinic method for the detections of practical clinical samples. Thus, our technique provides a new platform for simultaneous multiplex immunoassay.

  20. Spontaneous emission control in a tunable hybrid photonic system

    NARCIS (Netherlands)

    Frimmer, M.; Koenderink, A.F.

    2013-01-01

    We experimentally demonstrate control of the rate of spontaneous emission in a tunable hybrid photonic system that consists of two canonical building blocks for spontaneous emission control, an optical antenna and a mirror, each providing a modification of the local density of optical states (LDOS).

  1. Nonlinear spatial mode imaging of hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Laurila, Marko;

    2013-01-01

    Degenerate spontaneous four wave mixing is studied for the rst time in a large mode area hybrid photonic crystal ber, where light con nement is achieved by combined index- and bandgap guiding. Four wave mixing products are generated on the edges of the bandgaps, which is veri ed by numerical...

  2. Hybrid polymer photonic crystal fiber with integrated chalcogenide glass nanofilms

    DEFF Research Database (Denmark)

    Markos, Christos; Kubat, Irnis; Bang, Ole

    2014-01-01

    The combination of chalcogenide glasses with polymer photonic crystal fibers (PCFs) is a difficult and challenging task due to their different thermo-mechanical material properties. Here we report the first experimental realization of a hybrid polymer-chalcogenide PCF with integrated As2S3 glass ...

  3. First observation of Cherenkov ring images using hybrid photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Albrecht, E.; Wilkinson, G. [European Organization for Nuclear Research, Geneva (Switzerland). Div. Particle Physics Experiments; Barber, G.; Duane, A.; John, M.; Miller, D.G.; Websdale, D. [Imperial College of Science Technology and Medicine, Blackett Laboratory, Prince Consort Road, London SW7 2AZ (United Kingdom); Bibby, J.H.; Giles, R.; Harnew, N.; Smale, N. [University of Oxford, Department of Nuclear Physics, Keble Road, Oxford OX1 3RH (United Kingdom); Brook, N.H.; Halley, A.W.; O`Shea, V. [University of Glasgow, Department of Physics, Glasgow G12 8QQ (United Kingdom); French, M. [Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom); Gibson, V.; Wotton, S.A. [University of Cambridge, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE (United Kingdom); Schomaker, R. [Delft Electronic Products BV, 9300 AB Roden (Netherlands)

    1998-07-11

    A ring-imaging Cherenkov detector, equipped with hybrid photon detectors, has been operated in a charged-particle beam. Focussed ring images from various particle types were detected using silica aerogel, air and C{sub 4}F{sub 10} gas radiators. The detector, a prototype for the CERN LHC-B experiment, is described and first observations are reported. (orig.)

  4. Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Qiu, M.

    2007-01-01

    Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor is gr...

  5. Stabilization and frequency control of a DFB laser with a tunable optical reflector integrated in a Silicon Photonics PIC

    CERN Document Server

    Hauck, Johannes; Romero-García, Sebastían; Müller, Juliana; Shen, Bin; Richter, Jens; Merget, Florian; Witzens, Jeremy

    2016-01-01

    We investigate the effect of tunable optical feedback on a commercial DFB laser edge coupled to a Silicon Photonics planar integrated circuit in which a tunable reflector has been implemented by means of a ring resonator based add-drop multiplexer. Controlled optical feedback allows for fine-tuning of the laser oscillation frequency. Under certain conditions it also allows suppression of bifurcation modes triggered by reflections occurring elsewhere on the chip. A semi-analytical model describing laser dynamics under combined optical feedback from the input facet of the edge coupler and from the tunable on-chip reflector fits the measurements. Compensation of detrimental effects from reflections induced elsewhere on a transceiver chip may allow moving isolators downstream in future communications systems, facilitating direct hybrid laser integration in Silicon Photonics chips, provided a suitable feedback signal for a control system can be identified. Moreover, the optical frequency tuning at lower feedback l...

  6. Nanoscale photonics using coupled hybrid plasmonic architectures

    Science.gov (United States)

    Lin, Charles; Su, Yiwen; Helmy, Amr S.

    2016-04-01

    Plasmonic waveguides, which support surface plasmon polaritons (SPP) propagating along metal-dielectric interfaces, offer strong field confinement and are ideal for the design of integrated nano-scale photonic devices. However, due to free-carrier absorption in the metal, the enhanced mode confinement inevitably entails an increase in the waveguide loss. This lowers the device figure-of-merit achievable with passive plasmonic components and in turn hinders the performance of active plasmonic components such as optical modulators.

  7. Performance study of new pixel hybrid photon detector prototypes for the LHCb RICH counters

    CERN Document Server

    Moritz, M; Allebone, L; Campbell, M; Gys, Thierry; Newby, C; Pickford, A; Piedigrossi, D; Wyllie, K

    2004-01-01

    A pixel Hybrid Photon Detector was developed according to the specific requirements of the LHCb ring imaging Cerenkov counters. This detector comprises a silicon pixel detector bump-bonded to a binary readout chip to achieve a 25 ns fast readout and a high signal-to-noise ratio. The detector performance was characterized by varying the pixel threshold, the tube high voltage, the silicon bias voltage and by the determination of the photoelectron detection efficiency. Furthermore accelerated aging and high pixel occupancy tests were performed to verify the long term stability. The results were obtained using Cerenkov light and a fast pulsed light emitting diode. All measurements results are within the expectations and fulfill the design goals. (8 refs).

  8. Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Qiu, M.

    2007-01-01

    Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing....

  9. A support note for the use of pixel hybrid photon detectors in the RICH counters of LHCb

    CERN Document Server

    Gys, Thierry

    2001-01-01

    This document is a proposal for the use of a hybrid photon detector with integrated silicon pixel readout in the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 5. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The document starts with the general specification of the baseline option, followed by a summary of the main results achieved so far during the R&D phase. A future R&D programme and its related time table is also presented. The document concludes with the description of a photon detector production scheme and time schedule.

  10. Porous silicon photonic devices using pulsed anodic etching of lightly doped silicon

    Energy Technology Data Exchange (ETDEWEB)

    Escorcia-Garcia, J; Sarracino MartInez, O; Agarwal, V [CIICAP-Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col Chamilpa, CP 62210, Cuernavaca, Morelos (Mexico); Gracia-Jimenez, J M, E-mail: vagarwal@uaem.m [Instituto de Fisica, BUAP, Apdo. Postal J-48, San Manuel, 72570 Puebla, Puebla (Mexico)

    2009-07-21

    The fabrication of porous silicon photonic structures using lightly doped, p-type, silicon wafers (resistivity: 14-22 OMEGA cm) by pulsed anodic etching is reported. The optical properties have been found to be strongly dependent on the duty cycle and frequency of the applied current. All the interfaces of the single layered samples were digitally analysed by calculating the mean interface roughness (R{sub m}). The interface roughness was found to be maximum for the sample with direct current. The use of a duty cycle above 50%, in a certain range of frequencies, is found to reduce the interface roughness. The optical properties of some microcavities and rugate filters are investigated from the optimized parameters of the duty cycle and frequency, using the current densities of 10, 90 and 150 mA cm{sup -2}.

  11. Interfering Heralded Single Photons from Two Separate Silicon Nanowires Pumped at Different Wavelengths

    Directory of Open Access Journals (Sweden)

    Xiang Zhang

    2016-08-01

    Full Text Available Practical quantum photonic applications require on-demand single photon sources. As one possible solution, active temporal and wavelength multiplexing has been proposed to build an on-demand single photon source. In this scheme, heralded single photons are generated from different pump wavelengths in many temporal modes. However, the indistinguishability of these heralded single photons has not yet been experimentally confirmed. In this work, we achieve 88% ± 8% Hong–Ou–Mandel quantum interference visibility from heralded single photons generated from two separate silicon nanowires pumped at different wavelengths. This demonstrates that active temporal and wavelength multiplexing could generate indistinguishable heralded single photons.

  12. Hybrid genetic optimization for design of photonic crystal emitters

    Science.gov (United States)

    Rammohan, R. R.; Farfan, B. G.; Su, M. F.; El-Kady, I.; Reda Taha, M. M.

    2010-09-01

    A unique hybrid-optimization technique is proposed, based on genetic algorithms (GA) and gradient descent (GD) methods, for the smart design of photonic crystal (PhC) emitters. The photonic simulation is described and the granularity of photonic crystal dimensions is considered. An innovative sliding-window method for performing local heuristic search is demonstrated. Finally, the application of the proposed method on two case studies for the design of a multi-pixel photonic crystal emitter and the design of thermal emitter in thermal photovoltaic is demonstrated. Discussion in the report includes the ability of the optimal PhC structures designed using the proposed method, to produce unprecedented high emission efficiencies of 54.5% in a significantly long wavelength region and 84.9% at significantly short wavelength region.

  13. Experimental Bayesian Quantum Phase Estimation on a Silicon Photonic Chip.

    Science.gov (United States)

    Paesani, S; Gentile, A A; Santagati, R; Wang, J; Wiebe, N; Tew, D P; O'Brien, J L; Thompson, M G

    2017-03-10

    Quantum phase estimation is a fundamental subroutine in many quantum algorithms, including Shor's factorization algorithm and quantum simulation. However, so far results have cast doubt on its practicability for near-term, nonfault tolerant, quantum devices. Here we report experimental results demonstrating that this intuition need not be true. We implement a recently proposed adaptive Bayesian approach to quantum phase estimation and use it to simulate molecular energies on a silicon quantum photonic device. The approach is verified to be well suited for prethreshold quantum processors by investigating its superior robustness to noise and decoherence compared to the iterative phase estimation algorithm. This shows a promising route to unlock the power of quantum phase estimation much sooner than previously believed.

  14. Optical nonreciprocal transmission in an asymmetric silicon photonic crystal structure

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zheng; Chen, Juguang; Ji, Mengxi; Huang, Qingzhong; Xia, Jinsong; Wang, Yi, E-mail: yingwu2@126.com, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wu, Ying, E-mail: yingwu2@126.com, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2015-11-30

    An optical nonreciprocal transmission (ONT) is realized by employing the nonlinear effects in a compact asymmetric direct-coupled nanocavity-waveguide silicon photonic crystal structure with a high loaded quality factor (Q{sub L}) of 42 360 and large extinction ratio exceeding 30 dB. Applying a single step lithography and successive etching, the device can realize the ONT in an individual nanocavity, alleviating the requirement to accurately control the resonance of the cavities. A maximum nonreciprocal transmission ratio of 21.1 dB as well as a working bandwidth of 280 pm in the telecommunication band are obtained at a low input power of 76.7 μW. The calculated results by employing a nonlinear coupled-mode model are in good agreement with the experiment.

  15. Hybrid optical antennas with photonic resistors.

    Science.gov (United States)

    Butakov, N A; Schuller, J A

    2015-11-16

    Hybrid optical antennas, comprising active materials placed in the gaps of plasmonic split-ring-resonators and nano-dimers, have been the subject of numerous recent investigations. Engineered coupling between the two plasmonic resonators is achieved by modulating the active material, enabling control over the near- and far-field electromagnetic properties. Here, using electromagnetics calculations, we study the evolving optical response of a hybrid metal-semiconductor-metal nanorod antenna as the semiconductor free charge carrier density is continuously varied. In particular, we demonstrate qualitatively new behavior arising from epsilon-near-zero properties in intermediately doped semiconductors. In agreement with optical nano-circuit theory, we show that in the epsilon-near-zero regime such a load acts as an ideal optical resistor with an optimized damping response and strongly suppressed electromagnetic scattering. In periodic arrays, or metasurfaces, we then show how to use these effects to construct high-efficiency nanophotonic intensity modulators for dynamically shaping light.

  16. Photonic molecules formed by coupled hybrid resonators

    CERN Document Server

    Peng, Bo; Zhu, Jiangang; Yang, Lan; 10.1364/OL.37.003435

    2013-01-01

    We describe a method that enables free-standing whispering-gallery-mode microresonators, and report spectral tuning of photonic molecules formed by coupled free and on-chip resonators with different geometries and materials. We study direct coupling via evanescent fields of free silica microtoroids and microspheres with on-chip polymer coated silica microtoroids. We demonstrate thermal tuning of resonance modes to achieve maximal spectral overlap, mode splitting induced by direct coupling, and the effects of distance between the resonators on the splitting spectra.

  17. Biomolecular screening with encoded porous-silicon photonic crystals

    Science.gov (United States)

    Cunin, Frédérique; Schmedake, Thomas A.; Link, Jamie R.; Li, Yang Yang; Koh, Jennifer; Bhatia, Sangeeta N.; Sailor, Michael J.

    2002-09-01

    Strategies to encode or label small particles or beads for use in high-throughput screening and bioassay applications focus on either spatially differentiated, on-chip arrays or random distributions of encoded beads. Attempts to encode large numbers of polymeric, metallic or glass beads in random arrays or in fluid suspension have used a variety of entities to provide coded elements (bits)-fluorescent molecules, molecules with specific vibrational signatures, quantum dots, or discrete metallic layers. Here we report a method for optically encoding micrometre-sized nanostructured particles of porous silicon. We generate multilayered porous films in crystalline silicon using a periodic electrochemical etch. This results in photonic crystals with well-resolved and narrow optical reflectivity features, whose wavelengths are determined by the etching parameters. Millions of possible codes can be prepared this way. Micrometre-sized particles are then produced by ultrasonic fracture, mechanical grinding or by lithographic means. A simple antibody-based bioassay using fluorescently tagged proteins demonstrates the encoding strategy in biologically relevant media.

  18. Silicon photonic structures with embedded polymers for novel sensing methods

    Science.gov (United States)

    Osipov, E. V.; Martynov, I. L.; Dovzhenko, D. S.; Ananev, P. S.; Kotkovskii, G. E.; Chistyakov, A. A.

    2017-01-01

    At present time research and development of a new generation of optical sensors using conjugated polymers, in particular sensors of explosives are actively underway. Nevertheless, the problems of the sensitivity, selectivity, and stability of such sensors are still of great interest. One of the ways to solve the problem is the creation of luminescence sensors based on photonic crystals with a high specific surface area, which have significant sorption ability and allow to effective modulate emission properties of luminophores. In this paper, porous silicon microcavities with embeded organic polyphenylenevinylene- (PPV) and polyfluorene- (PF) type polymers were created. It was shown that polymer infiltration in porous silicon microcavities leads to modification of their luminescence properties, which is expressed in narrowing of the emission spectrum and changing of its directional pattern. It was demonstrated that such structures exhibit sensitivity to saturated vapors of trinitrotoluene. The structures proposed can be treated as a basis for development of new type of sensors used for detection of vapors of nitroaromatic compounds.

  19. Miniature optical coherence tomography system based on silicon photonics

    Science.gov (United States)

    Margallo-Balbás, Eduardo; Pandraud, Gregory; French, Patrick J.

    2008-02-01

    Optical Coherence Tomography (OCT) is a promising medical imaging technique. It has found applications in many fields of medicine and has a large potential for the optical biopsy of tumours. One of the technological challenges impairing faster adoption of OCT is the relative complexity of the optical instrumentation required, which translates into expensive and bulky setups. In this paper we report an implementation of Time Domain OCT (TD-OCT) based on a silicon photonic platform. The devices are fabricated using Silicon-On-Insulator (SOI) wafers, on which rib waveguides are defined. While most of the components needed are well-known in this technology, a fast delay line with sufficient scanning range is a specific requirement of TD-OCT. In the system reported, this was obtained making use of the thermo-optical effect of silicon. By modulating the thermal resistance of the waveguide to the substrate, it is possible to establish a trade-off between maximum working frequency and power dissipation. Within this trade-off, the systems obtained can be operated in the kHz range, and they achieve temperature shifts corresponding to scanning ranges of over 2mm. Though the current implementation still requires external sources and detectors to be coupled to the Planar Lightwave Circuit (PLC), future work will include three-dimensional integration of these components onto the substrate. With the potential to include the read-out and driving electronics on the same die, the reported approach can yield extremely compact and low-cost TD-OCT systems, enabling a wealth of new applications, including gastrointestinal pills with optical biopsy capabilities.

  20. Experimental demonstration of reservoir computing on a silicon photonics chip

    Science.gov (United States)

    Vandoorne, Kristof; Mechet, Pauline; van Vaerenbergh, Thomas; Fiers, Martin; Morthier, Geert; Verstraeten, David; Schrauwen, Benjamin; Dambre, Joni; Bienstman, Peter

    2014-03-01

    In today’s age, companies employ machine learning to extract information from large quantities of data. One of those techniques, reservoir computing (RC), is a decade old and has achieved state-of-the-art performance for processing sequential data. Dedicated hardware realizations of RC could enable speed gains and power savings. Here we propose the first integrated passive silicon photonics reservoir. We demonstrate experimentally and through simulations that, thanks to the RC paradigm, this generic chip can be used to perform arbitrary Boolean logic operations with memory as well as 5-bit header recognition up to 12.5 Gbit s-1, without power consumption in the reservoir. It can also perform isolated spoken digit recognition. Our realization exploits optical phase for computing. It is scalable to larger networks and much higher bitrates, up to speeds >100 Gbit s-1. These results pave the way for the application of integrated photonic RC for a wide range of applications.

  1. High visibility time-energy entangled photons from a silicon nanophotonic chip

    CERN Document Server

    Rogers, Steven; Lu, Xiyuan; Jiang, Wei C; Lin, Qiang

    2016-01-01

    Advances in quantum photonics have shown that chip-scale quantum devices are translating from the realm of basic research to applied technologies. Recent developments in integrated photonic circuits and single photon detectors indicate that the bottleneck for fidelity in quantum photonic processes will ultimately lie with the photon sources. We present and demonstrate a silicon nanophotonic chip capable of emitting telecommunication band photon pairs that exhibit the highest raw degree of time-energy entanglement from a micro/nanoscale source, to date. Biphotons are generated through cavity-enhanced spontaneous four-wave mixing (SFWM) in a high-Q silicon microdisk resonator, wherein the nature of the triply-resonant generation process leads to a dramatic Purcell enhancement, resulting in highly efficient pair creation rates as well as extreme suppression of the photon noise background. The combination of the excellent photon source and a new phase locking technique, allow for the observation of a nearly perfe...

  2. Hybrid indium phosphide-on-silicon nanolaser diode

    Science.gov (United States)

    Crosnier, Guillaume; Sanchez, Dorian; Bouchoule, Sophie; Monnier, Paul; Beaudoin, Gregoire; Sagnes, Isabelle; Raj, Rama; Raineri, Fabrice

    2017-04-01

    The most-awaited convergence of microelectronics and photonics promises to bring about a revolution for on-chip data communications and processing. Among all the optoelectronic devices to be developed, power-efficient nanolaser diodes able to be integrated densely with silicon photonics and electronics are essential to convert electrical data into the optical domain. Here, we report a demonstration of ultracompact laser diodes based on one-dimensional (1D) photonic crystal (PhC) nanocavities made in InP nanoribs heterogeneously integrated on a silicon-waveguide circuitry. The specific nanorib design enables an efficient electrical injection of carriers in the nanocavity without spoiling its optical properties. Room-temperature continuous-wave (CW) single-mode operation is obtained with a low current threshold of 100 µA. Laser emission at 1.56 µm in the silicon waveguides is obtained with wall-plug efficiencies greater than 10%. This result opens up exciting avenues for constructing optical networks at the submillimetre scale for on-chip interconnects and signal processing.

  3. Hybrid squeezing of solitonic resonant radiation in photonic crystal fibers

    CERN Document Server

    Tran, Truong X; Soeller, Christoph; Blow, Keith J; Biancalana, Fabio

    2011-01-01

    We report on the existence of a novel kind of squeezing in photonic crystal fibers which is conceptually intermediate between the four-wave mixing induced squeezing, in which all the participant waves are monochromatic waves, and the self-phase modulation induced squeezing for a single pulse in a coherent state. This hybrid squeezing occurs when an arbitrary short soliton emits quasi-monochromatic resonant radiation near a zero group velocity dispersion point of the fiber. Photons around the resonant frequency become strongly correlated due to the presence of the classical soliton, and a reduction of the quantum noise below the shot noise level is predicted.

  4. Band structure of germanium carbides for direct bandgap silicon photonics

    Science.gov (United States)

    Stephenson, C. A.; O'Brien, W. A.; Penninger, M. W.; Schneider, W. F.; Gillett-Kunnath, M.; Zajicek, J.; Yu, K. M.; Kudrawiec, R.; Stillwell, R. A.; Wistey, M. A.

    2016-08-01

    Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge1-xCx (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge0.998C0.002 shows a bandgap reduction supporting these results. Growth of Ge0.998C0.002 using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III-V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

  5. Hybrid plasmonic-photonic resonators (Conference Presentation)

    Science.gov (United States)

    Koenderink, A. Femius; Doeleman, Hugo M.; Ruesink, Freek; Verhagen, Ewold; Osorio, Clara I.

    2016-09-01

    Hybrid nanophotonic structures are structures that integrate different nanoscale platforms to harness light-matter interaction. We propose that combinations of plasmonic antennas inside modest-Q dielectric cavities can lead to very high Purcell factors, yielding plasmonic mode volumes at essentially cavity quality factors. The underlying physics is subtle: for instance, how plasmon antennas with large cross sections spoil or improve cavities and vice versa, contains physics beyond perturbation theory, depending on interplays of back-action, and interferences. This is evident from the fact that the local density of states of hybrid systems shows the rich physics of Fano interferences. I will discuss recent scattering experiments performed on toroidal microcavities coupled to plasmon particle arrays that probe both cavity resonance shifts and particle polarizability changes illustrating these insights. Furthermore I will present our efforts to probe single plasmon antennas coupled to emitters and complex environments using scatterometry. An integral part of this approach is the recently developed measurement method of `k-space polarimetry', a microscopy technique to completely classify the intensity and polarization state of light radiated by a single nano-object into any emission direction that is based on back focal plane imaging and Stokes polarimetry. I show benchmarks of this technique for the cases of scattering, fluorescence, and cathodoluminescence applied to directional surface plasmon polariton antennas.

  6. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    CERN Document Server

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

  7. A stamped PEDOT:PSS-silicon nanowire hybrid solar cell.

    Science.gov (United States)

    Moiz, Syed Abdul; Nahhas, Ahmed Muhammad; Um, Han-Don; Jee, Sang-Won; Cho, Hyung Koun; Kim, Sang-Woo; Lee, Jung-Ho

    2012-04-13

    A novel stamped hybrid solar cell was proposed using the stamping transfer technique by stamping an active PEDOT:PSS thin layer onto the top of silicon nanowires (SiNWs). Compared to a bulk-type counterpart that fully embeds SiNWs inside PEDOT:PSS, an increase in the photovoltaic efficiency was observed by a factor of ∼4.6, along with improvements in both electrical and optical responses for the stamped hybrid cell. Such improvements for hybrid cells was due to the formation of well-connected and linearly aligned active PEDOT:PSS channels at the top ends of the nanowires after the stamping process. These stamped channels facilitated not only to improve the charge transport, light absorption, but also to decrease the free carriers as well as exciton recombination losses for stamped hybrid solar cells.

  8. Hybrid plasmon photonic crystal resonance grating for integrated spectrometer biosensor.

    Science.gov (United States)

    Guo, Hong; Guo, Junpeng

    2015-01-15

    Using nanofabricated hybrid metal-dielectric nanohole array photonic crystal gratings, a hybrid plasmonic optical resonance spectrometer biosensor is demonstrated. The new spectrometer sensor technique measures plasmonic optical resonance from the first-order diffraction rather than via the traditional method of measuring optical resonance from transmission. The resonance spectra measured with the new spectrometer technique are compared with the spectra measured using a commercial optical spectrometer. It is shown that the new optical resonance spectrometer can be used to measure plasmonic optical resonance that otherwise cannot be measured with a regular optical spectrometer.

  9. Hybrid Silicon Nanocone–Polymer Solar Cells

    KAUST Repository

    Jeong, Sangmoo

    2012-06-13

    Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

  10. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    Science.gov (United States)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-07-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.

  11. Large Frequency Range of Photonic Band Gaps on Porous Silicon Heterostructures for Infrared Applications

    CERN Document Server

    Manzanares-Martinez, J; Archuleta-Garcia, R; Moctezuma-Enriquez, D

    2010-01-01

    In this work we show theoretically that it is possible to design a large band gap in the infrared range using a one-dimensional Photonic Crystal heterostructure made of porous silicon. Stacking together multiple photonic crystal substructures of the same contrast index, but of different lattice periods, it is possible to broad the narrow forbidden band gap that can be reached by the low contrast index of the porous silicon multilayers. The main idea in this work is that we can construct a Giant Photonic Band Gap -as large as desired- by combining a tandem of photonic crystals substructures by using a simple analytical rule to determine the period of each substructure.

  12. Study on photon sensitivity of silicon diodes related to materials used for shielding

    Science.gov (United States)

    Moiseev, T.

    1999-08-01

    Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter.

  13. Imaging Hybrid Photon Detectors with a Reflective Photocathode

    CERN Document Server

    Ferenc, D

    2000-01-01

    Modern epitaxially grown photocathodes, like GaAsP, bring a very high inherent quantum efficiency, but are rather expensive due to the complicated manufacturing and mounting process. We argue that such photocathodes could be used in reflective mode, in order to avoid the risky and expensive removal of the epitaxial growth substrate. Besides that the quantum efficiency should increase considerably. In this paper we present results of the development of large imaging Hybrid Photon Detectors (HPDs), particularly designed for such reflective photocathodes.

  14. Telecommunications-band heralded single photons from a silicon nanophotonic chip

    CERN Document Server

    Davanco, Marcelo; Shehata, Andrea Bahgat; Tosi, Alberto; Agha, Imad; Assefa, Solomon; Xia, Fengnian; Green, William M J; Mookherjea, Shayan; Srinivasan, Kartik

    2012-01-01

    We demonstrate heralded single photon generation in a CMOS-compatible silicon nanophotonic device. The strong modal confinement and slow group velocity provided by a coupled resonator optical waveguide (CROW) produced a large four-wave-mixing nonlinearity coefficient gamma_eff ~4100 W^-1 m^-1 at telecommunications wavelengths. Spontaneous four-wave-mixing using a degenerate pump beam at 1549.6 nm created photon pairs at 1529.5 nm and 1570.5 nm with a coincidence-to-accidental ratio exceeding 20. A photon correlation measurement of the signal (1529.5 nm) photons heralded by the detection of the idler (1570.5 nm) photons showed antibunching with g^(2)(0) = 0.19 \\pm 0.03. The demonstration of a single photon source within a silicon platform holds promise for future integrated quantum photonic circuits.

  15. Light collection from scattering media in a silicon photonics integrated circuit

    OpenAIRE

    2011-01-01

    We present a silicon photonics integrated circuit to efficiently couple scattered light into a single mode waveguide. By modulating the phase of N light-capturing elements, the collection efficiency can be increased by a factor N.

  16. Silicon Photonics Integrated Circuits for 5th Generation mm-Wave Wireless Communications

    DEFF Research Database (Denmark)

    Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applicability...... of such photonic-wireless hybrid links by reduction in complexity, size and – most importantly – cost....

  17. mm-Wave Wireless Communications based on Silicon Photonics Integrated Circuits

    DEFF Research Database (Denmark)

    Rommel, Simon; Heck, Martijn; Vegas Olmos, Juan José;

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency range are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical...... applicability of such photonic-wireless hybrid links by reduction in complexity, size and – most importantly – cost....

  18. Mode hybridization and conversion in silicon-on-insulator nanowires with angled sidewalls.

    Science.gov (United States)

    Dai, Daoxin; Zhang, Ming

    2015-12-14

    The mode property and light propagation in a tapered silicon-on-insulator (SOI) nanowire with angled sidewalls is analyzed. Mode hybridization is observed and mode conversion between the TM fundamental mode and higher-order TE modes happens when light propagates in a waveguide taper which is used very often in the design of photonic integrated devices. This mode conversion ratio is possible to be very high (even close to 100%) when the taper is long enough to be adiabatic, which might be useful for some applications of multimode photonics. When the mode conversion is undesired to avoid any excess loss as well as crosstalk for photonic integrated circuits, one can depress the mode conversion by compensating the vertical asymmetry in the way of reducing the sidewall angle or introducing an optimal refractive index for the upper-cladding. It is also possible to eliminate the undesired mode conversion almost and improve the desired mode conversion greatly by introducing an abrupt junction connecting two sections with different widths to jump over the mode hybridization region.

  19. Microwave photonic phase shifter based on tunable silicon-on-insulator microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi;

    2010-01-01

    We demonstrate a microwave photonic phase shifter based on an electrically tunable silicon-on-insulator microring resonator. A continuously tunable phase shift of up to 315° at a microwave frequency of 15GHz is obtained.......We demonstrate a microwave photonic phase shifter based on an electrically tunable silicon-on-insulator microring resonator. A continuously tunable phase shift of up to 315° at a microwave frequency of 15GHz is obtained....

  20. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  1. Sine wave gating silicon single-photon detectors for multiphoton entanglement experiments

    Science.gov (United States)

    Zhou, Nan; Jiang, Wen-Hao; Chen, Luo-Kan; Fang, Yu-Qiang; Li, Zheng-Da; Liang, Hao; Chen, Yu-Ao; Zhang, Jun; Pan, Jian-Wei

    2017-08-01

    Silicon single-photon detectors (SPDs) are the key devices for detecting single photons in the visible wavelength range. Here we present high detection efficiency silicon SPDs dedicated to the generation of multiphoton entanglement based on the technique of high-frequency sine wave gating. The silicon single-photon avalanche diode components are acquired by disassembling 6 commercial single-photon counting modules (SPCMs). Using the new quenching electronics, the average detection efficiency of SPDs is increased from 68.6% to 73.1% at a wavelength of 785 nm. These sine wave gating SPDs are then applied in a four-photon entanglement experiment, and the four-fold coincidence count rate is increased by 30% without degrading its visibility compared with the original SPCMs.

  2. One-dimensional photonic crystal fishbone hybrid nanocavity with nanoposts

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Tsan-Wen; Lin, Pin-Tso; Lee, Po-Tsung, E-mail: potsung@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Rm. 413 CPT Building, 1001 Ta-Hsueh Road, Hsinchu 30010, Taiwan (China)

    2014-05-12

    We propose and investigate a one-dimensional photonic crystal (PhC) fishbone (FB) hybrid nanocavity lying on silver substrate with a horizontal air slot. With very few PhC periods, the confined transverse-magnetic, TM{sub 10} hybrid mode concentrated within the air slot shows high quality factor over effective mode volume ratio larger than 10{sup 5}λ{sup −3}. Most importantly, this FB hybrid nanocavity allows formation of low-index nanoposts within the air slot without significantly affecting the mode properties. These nanoposts guarantee the structural stabilities under different environmental perturbations. Furthermore, capabilities of our proposed design in serving as optical sensors and tweezers for bio-sized nanoparticles are also investigated.

  3. A robust silicon photonic platform for multiparameter biological analysis

    Science.gov (United States)

    Bailey, Ryan C.; Washburn, Adam L.; Qavi, Abraham J.; Iqbal, Muzammil; Gleeson, Martin; Tybor, Frank; Gunn, L. Cary

    2009-02-01

    Silicon photonic technology has incredible potential to transform multiplexed bioanalysis on account of the scalability of device fabrication, which maps favorably to a myriad of medical diagnostic applications. The optical properties of CMOS-fabricated microring resonators are incredibly responsive to changes in the local dielectric environment accompanying a biological binding event near the ring surface. Arrays of high-Q microrings were designed to be individually addressable both in surface derivitization, using well-established microarraying technologies, and in optical evaluation. The optical response of each ring can be determined in near real time allowing multiple biomolecular interactions to be simultaneously monitored. We describe a stable and robust measurement platform that allows sensitive visualization of small molecule surface chemical derivitization as well as monitoring of biological interactions, including the detection of proteins and nucleic acids. We also present recent results demonstrating multiplexed measurement of cancer markers. These demonstrations establish a pathway to higher level multiparameter analysis from real-world patient samples; a development that will enable individualized disease diagnostics and personalized medicine.

  4. Evaluation of a photon-counting hybrid pixel detector array with a synchrotron X-ray source

    Science.gov (United States)

    Ponchut, C.; Visschers, J. L.; Fornaini, A.; Graafsma, H.; Maiorino, M.; Mettivier, G.; Calvet, D.

    2002-05-01

    A photon-counting hybrid pixel detector (Medipix-1) has been characterized using a synchrotron X-ray source. The detector consists of a readout ASIC with 64×64 independent photon-counting cells of 170×170 μm 2 pitch, bump-bonded to a 300 μm thick silicon sensor, read out by a PCIbus-based electronics, and a graphical user interface (GUI) software. The intensity and the energy tunability of the X-ray source allow characterization of the detector in the time, space, and energy domains. The system can be read out on external trigger at a frame rate of 100 Hz with 3 ms exposure time per frame. The detector response is tested up to more than 7×10 5 detected events/pixel/s. The point-spread response shows beam reveals no loss in sensitivity between adjacent pixels as could result from charge sharing in the silicon sensor. Photons down to 6 keV can be detected after equalization of the thresholds of individual pixels. The obtained results demonstrate the advantages of photon-counting hybrid pixel detectors and particularly of the Medipix-1 chip for a wide range of X-ray imaging applications, including those using synchrotron X-ray beams.

  5. Characterization of silicon avalanche photodiodes for photon correlation measurements. 3: Sub-Geiger operation.

    Science.gov (United States)

    Brown, R G; Daniels, M

    1989-11-01

    We continue examination of the photon correlation properties of silicon avalanche photodiodes operated in the single-photon counting mode by extending their operation from that of passive [Appl. Opt. 25, 4122-4126 (1986)] and active [Appl. Opt. 26, 2383-2389 (1987)] quenching to the sub-Geiger mode, with potential for high quantum efficiency and very low afterpulsing.

  6. Bandwidth-adaptable silicon photonic differentiator employing a slow light effect

    DEFF Research Database (Denmark)

    Yan, Siqi; Cheng, Ziwei; Frandsen, Lars Hagedorn

    2017-01-01

    exploits the slow light effect in a photonic crystal waveguide (PhCW) to overcome the inherent bandwidth limitation of current photonic DIFFs. We fabricated a PhCW Mach-Zehnder interferometer (PhCW-MZI) on the silicon-onisolator material platform to validate our concept. Input Gaussian pulses with full...

  7. Why I am optimistic about the silicon-photonic route to quantum computing

    Science.gov (United States)

    Rudolph, Terry

    2017-03-01

    This is a short overview explaining how building a large-scale, silicon-photonic quantum computer has been reduced to the creation of good sources of 3-photon entangled states (and may simplify further). Given such sources, each photon needs to pass through a small, constant, number of components, interfering with at most 2 other spatially nearby photons, and current photonics engineering has already demonstrated the manufacture of thousands of components on two-dimensional semiconductor chips with performance that, once scaled up, allows the creation of tens of thousands of photons entangled in a state universal for quantum computation. At present the fully integrated, silicon-photonic architecture we envisage involves creating the required entangled states by starting with single-photons produced non-deterministically by pumping silicon waveguides (or cavities) combined with on-chip filters and nanowire superconducting detectors to herald that a photon has been produced. These sources are multiplexed into being near-deterministic, and the single photons then passed through an interferometer to non-deterministically produce small entangled states—necessarily multiplexed to near-determinism again. This is followed by a "ballistic" scattering of the small-scale entangled photons through an interferometer such that some photons are detected, leaving the remainder in a large-scale entangled state which is provably universal for quantum computing implemented by single-photon measurements. There are a large number of questions regarding the optimum ways to make and use the final cluster state, dealing with static imperfections, constructing the initial entangled photon sources and so on, that need to be investigated before we can aim for millions of qubits capable of billions of computational time steps. The focus in this article is on the theoretical side of such questions.

  8. Why I am optimistic about the silicon-photonic route to quantum computing

    Directory of Open Access Journals (Sweden)

    Terry Rudolph

    2017-03-01

    Full Text Available This is a short overview explaining how building a large-scale, silicon-photonic quantum computer has been reduced to the creation of good sources of 3-photon entangled states (and may simplify further. Given such sources, each photon needs to pass through a small, constant, number of components, interfering with at most 2 other spatially nearby photons, and current photonics engineering has already demonstrated the manufacture of thousands of components on two-dimensional semiconductor chips with performance that, once scaled up, allows the creation of tens of thousands of photons entangled in a state universal for quantum computation. At present the fully integrated, silicon-photonic architecture we envisage involves creating the required entangled states by starting with single-photons produced non-deterministically by pumping silicon waveguides (or cavities combined with on-chip filters and nanowire superconducting detectors to herald that a photon has been produced. These sources are multiplexed into being near-deterministic, and the single photons then passed through an interferometer to non-deterministically produce small entangled states—necessarily multiplexed to near-determinism again. This is followed by a “ballistic” scattering of the small-scale entangled photons through an interferometer such that some photons are detected, leaving the remainder in a large-scale entangled state which is provably universal for quantum computing implemented by single-photon measurements. There are a large number of questions regarding the optimum ways to make and use the final cluster state, dealing with static imperfections, constructing the initial entangled photon sources and so on, that need to be investigated before we can aim for millions of qubits capable of billions of computational time steps. The focus in this article is on the theoretical side of such questions.

  9. Quantum Photonic in Hybrid Cavity Systems with Strong Matter-Light Couplings

    Science.gov (United States)

    2015-08-24

    AFRL-AFOSR-VA-TR-2015-0246 Quantum Photonic in Hybrid Cavity Systems with Strong Matter-Light Couplings Hui Deng UNIVERSITY OF MICHIGAN Final Report...TITLE AND SUBTITLE Quantum Photonic in Hybrid Cavity Systems with Strong Matter-Light Couplings 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-12-1-0256... photons was demonstrated in the designable microcavity structure for the first time, establishing a robust light-matter hybrid states with designable

  10. Enhanced Nonlinear Optical Effect in Hybrid Liquid Crystal Cells Based on Photonic Crystal

    Science.gov (United States)

    Bugaychuk, Svitlana; Iljin, Andrey; Lytvynenko, Oleg; Tarakhan, Ludmila; Karachevtseva, Lulmila

    2017-07-01

    Nonlinear-optical response of photorefractive hybrid liquid crystal (LC) cells has been studied by means of dynamic holographic technique in two-wave mixing arrangement. The LC cells include nonuniform silicon substrates comprising a micrometer-range photonic crystal. A thin LC layer is set between silicon substrate and a flat glass substrate covered by a transparent (ITO) electrode. A dynamic diffraction grating was induced in the LC volume by the two-wave mixing of laser beams with simultaneous application of DC electric field to the cell. Theoretical model of Raman-Nath self-diffraction was developed. This model allows for calculation of nonlinear optical characteristics in thin samples on the base of two-wave mixing experimental data, and with taking into account light losses on absorption and/or scattering. The hybrid LC cells demonstrate strong nonlinear optical effect, prospective for many applications in electro-optical microsystems, such as SLMs, as well as in multi-channel systems.

  11. Role of majority and minority carrier barriers silicon/organic hybrid heterojunction solar cells.

    Science.gov (United States)

    Avasthi, Sushobhan; Lee, Stephanie; Loo, Yueh-Lin; Sturm, James C

    2011-12-22

    A hybrid approach to solar cells is demonstrated in which a silicon p-n junction, used in conventional silicon-based photovoltaics, is replaced by a room-temperature fabricated silicon/organic heterojunction. The unique advantage of silicon/organic heterojunction is that it exploits the cost advantage of organic semiconductors and the performance advantages of silicon to enable potentially low-cost, efficient solar cells.

  12. The performance of photon counting imaging with a Geiger mode silicon avalanche photodiode

    Science.gov (United States)

    Qu, Hui-Ming; Zhang, Yi-Fan; Ji, Zhong-Jie; Chen, Qian

    2013-10-01

    In principle, photon counting imaging can detect a photon. With the development of low-level-light image intensifier techniques and low-level-light detection devices, photon counting imaging can now detect photon images under extremely low illumination. Based on a Geiger mode silicon avalanche photodiode single photon counter, an experimental system for photon counting imaging was built through two-dimensional scanning of a SPAD (single photon avalanche diode) detector. The feasibility of the imaging platform was validated experimentally. Two images with different characteristics, namely, the USAF 1951 resolution test panel and the image of Lena, were chosen to evaluate the imaging performance of the experimental system. The results were compared and analysed. The imaging properties under various illumination and scanning steps were studied. The lowest illumination limit of the SPAD photon counting imaging was determined.

  13. Photonic states mixing beyond the plasmon hybridization model

    Science.gov (United States)

    Suryadharma, Radius N. S.; Iskandar, Alexander A.; Tjia, May-On

    2016-07-01

    A study is performed on a photonic-state mixing-pattern in an insulator-metal-insulator cylindrical silver nanoshell and its rich variations induced by changes in the geometry and dielectric media of the system, representing the combined influences of plasmon coupling strength and cavity effects. This study is performed in terms of the photonic local density of states (LDOS) calculated using the Green tensor method, in order to elucidate those combined effects. The energy profiles of LDOS inside the dielectric core are shown to exhibit consistently growing number of redshifted photonic states due to an enhanced plasmon coupling induced state mixing arising from decreased shell thickness, increased cavity size effect, and larger symmetry breaking effect induced by increased permittivity difference between the core and the background media. Further, an increase in cavity size leads to increased additional peaks that spread out toward the lower energy regime. A systematic analysis of those variations for a silver nanoshell with a fixed inner radius in vacuum background reveals a certain pattern of those growing number of redshifted states with an analytic expression for the corresponding energy downshifts, signifying a photonic state mixing scheme beyond the commonly adopted plasmon hybridization scheme. Finally, a remarkable correlation is demonstrated between the LDOS energy profiles outside the shell and the corresponding scattering efficiencies.

  14. Photonic states mixing beyond the plasmon hybridization model

    Energy Technology Data Exchange (ETDEWEB)

    Suryadharma, Radius N. S.; Iskandar, Alexander A., E-mail: iskandar@fi.itb.ac.id; Tjia, May-On [Physics of Magnetism and Photonics Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)

    2016-07-28

    A study is performed on a photonic-state mixing-pattern in an insulator-metal-insulator cylindrical silver nanoshell and its rich variations induced by changes in the geometry and dielectric media of the system, representing the combined influences of plasmon coupling strength and cavity effects. This study is performed in terms of the photonic local density of states (LDOS) calculated using the Green tensor method, in order to elucidate those combined effects. The energy profiles of LDOS inside the dielectric core are shown to exhibit consistently growing number of redshifted photonic states due to an enhanced plasmon coupling induced state mixing arising from decreased shell thickness, increased cavity size effect, and larger symmetry breaking effect induced by increased permittivity difference between the core and the background media. Further, an increase in cavity size leads to increased additional peaks that spread out toward the lower energy regime. A systematic analysis of those variations for a silver nanoshell with a fixed inner radius in vacuum background reveals a certain pattern of those growing number of redshifted states with an analytic expression for the corresponding energy downshifts, signifying a photonic state mixing scheme beyond the commonly adopted plasmon hybridization scheme. Finally, a remarkable correlation is demonstrated between the LDOS energy profiles outside the shell and the corresponding scattering efficiencies.

  15. Metamaterials: A New Ba0.6 Sr0.4 TiO3 -Silicon Hybrid Metamaterial Device in Terahertz Regime (Small 19/2016).

    Science.gov (United States)

    Wu, Liang; Du, Ting; Xu, Ningning; Ding, Chunfeng; Li, Hui; Sheng, Quan; Liu, Ming; Yao, Jianquan; Wang, Zhiyong; Lou, Xiaojie; Zhang, Weili

    2016-05-01

    A giant terahertz modulation based on a Ba0.6 Sr0.4 TiO3 -silicon hybrid metamaterial is reported by L. Wu, W. Zhang, and co-workers on page 2610. The proposed nanoscale Ba0.6 Sr0.4 TiO3 (BST) hybrid metamaterial, delivering a transmission contrast of up to ≈79% due to electrically enabled carrier transport between the ferroelectric thin film and silicon substrate, is promising in developing high-performance real world photonic devices for terahertz technology.

  16. A novel hybrid plasmonic waveguide with loss compensation via electrically pumped gain medium based on silicon platform

    Science.gov (United States)

    Zhu, Ning

    2013-01-01

    In this paper we propose and study a new hybrid plasmonic waveguide structure with gain medium. The structure is based on silicon platform with gain medium to be III-V material, which can be electrically pumped. The whole structure can be realized through the bonding technique. An adhesive polymer layer adopted in the bonding process acts as the low refractive index layer here in the hybrid plasmonic waveguide. Further simulation with gain presented shows that a moderate gain coefficient of 891 cm-1 is required for lossless propagation while keeping subwavelength modal size, especially in the lateral direction which is important for high density integration. Considering the fabrication compatibility, this new SPP structure would be highly favorable in the silicon photonics.

  17. Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s.

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2016-12-26

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

  18. PAM4 silicon photonic microring resonator-based transceiver circuits

    Science.gov (United States)

    Palermo, Samuel; Yu, Kunzhi; Roshan-Zamir, Ashkan; Wang, Binhao; Li, Cheng; Seyedi, M. Ashkan; Fiorentino, Marco; Beausoleil, Raymond

    2017-02-01

    Increased data rates have motivated the investigation of advanced modulation schemes, such as four-level pulseamplitude modulation (PAM4), in optical interconnect systems in order to enable longer transmission distances and operation with reduced circuit bandwidth relative to non-return-to-zero (NRZ) modulation. Employing this modulation scheme in interconnect architectures based on high-Q silicon photonic microring resonator devices, which occupy small area and allow for inherent wavelength-division multiplexing (WDM), offers a promising solution to address the dramatic increase in datacenter and high-performance computing system I/O bandwidth demands. Two ring modulator device structures are proposed for PAM4 modulation, including a single phase shifter segment device driven with a multi-level PAM4 transmitter and a two-segment device driven by two simple NRZ (MSB/LSB) transmitters. Transmitter circuits which utilize segmented pulsed-cascode high swing output stages are presented for both device structures. Output stage segmentation is utilized in the single-segment device design for PAM4 voltage level control, while in the two-segment design it is used for both independent MSB/LSB voltage levels and impedance control for output eye skew compensation. The 65nm CMOS transmitters supply a 4.4Vppd output swing for 40Gb/s operation when driving depletion-mode microring modulators implemented in a 130nm SOI process, with the single- and two-segment designs achieving 3.04 and 4.38mW/Gb/s, respectively. A PAM4 optical receiver front-end is also described which employs a large input-stage feedback resistor transimpedance amplifier (TIA) cascaded with an adaptively-tuned continuous-time linear equalizer (CTLE) for improved sensitivity. Receiver linearity, critical in PAM4 systems, is achieved with a peak-detector-based automatic gain control (AGC) loop.

  19. Nonlinear optical effects of ultrahigh-Q silicon photonic nanocavities immersed in superfluid helium

    CERN Document Server

    Sun, Xiankai; Schuck, Carsten; Tang, Hong X

    2013-01-01

    Photonic nanocavities are a key component in many applications because of their capability of trapping and storing photons and enhancing interactions of light with various functional materials and structures. The maximal number of photons that can be stored in silicon photonic cavities is limited by the free-carrier and thermo-optic effects at room temperature. To reduce such effects, we performed the first experimental study of optical nonlinearities in ultrahigh-Q silicon disk nanocavities at cryogenic temperatures in a superfluid helium environment. At elevated input power, the cavity transmission spectra exhibit distinct blue-shifted bistability behavior when temperature crosses the liquid helium lambda point. At even lower temperatures, the spectra restore to symmetric Lorentzian shapes. Under this condition, we obtain a large stored intracavity photon number of about 40,000, which is limited ultimately by the local helium phase transition. These new discoveries are explained by theoretical calculations ...

  20. Non-invasive monitoring and control in silicon photonics by CMOS integrated electronics

    CERN Document Server

    Grillanda, Stefano; Morichetti, Francesco; Ciccarella, Pietro; Annoni, Andrea; Ferrari, Giorgio; Strain, Michael; Sorel, Marc; Sampietro, Marco; Melloni, Andrea

    2014-01-01

    As photonics breaks away from today's device level toward large scale of integration and complex systems-on-a-chip, concepts like monitoring, control and stabilization of photonic integrated circuits emerge as new paradigms. Here, we show non-invasive monitoring and feedback control of high quality factor silicon photonics resonators assisted by a transparent light detector directly integrated inside the cavity. Control operations are entirely managed by a CMOS microelectronic circuit, hosting many parallel electronic read-out channels, that is bridged to the silicon photonics chip. Advanced functionalities, such as wavelength tuning, locking, labeling and swapping are demonstrated. The non-invasive nature of the transparent monitor and the scalability of the CMOS read-out system offer a viable solution for the control of arbitrarily reconfigurable photonic integrated circuits aggregating many components on a single chip.

  1. Discrete Frequency Entangled Photon Pair Generation Based on Silicon Micro-ring Cavities

    Science.gov (United States)

    Suo, Jing; Zhang, Wei; Dong, Shuai; Huang, Yidong; Peng, Jiangde

    2016-10-01

    In this paper, we propose and demonstrate a scheme to generate discrete frequency entangled photon pairs based on a silicon micro-ring resonator. The resonator is placed in a Sagnac fiber loop. Stimulated by two pump lights at two different resonance wavelengths of the resonator, photon pairs at another two resonance wavelengths are generated along two opposite directions in the fiber loop, by the nondegenerate spontaneous four wave mixing in the resonator. Their states are superposed and interfered at the output ports of the fiber loop to generate frequency entangled photon pairs. On the other hand, since the pump lights come from two continuous wave lasers, energy-time entanglement is an intrinsic property of the generated photon pairs. The entanglements on frequency and energy-time are demonstrated experimentally by the experiments of spatial quantum beating and Franson-type interference, respectively, showing that the silicon micro-ring resonators are ideal candidates to realize complex photonic quantum state generation.

  2. Biperiodic nanostructured waveguides for wavelength-selectivity of hybrid photonic devices.

    Science.gov (United States)

    Talneau, A; Pommarède, X; Itawi, A; Pantzas, K; Lupu, A; Benisty, H

    2015-11-15

    A biperiodic nanostructuration consisting of a super-periodicity added to a nanohole lattice of subwavelength pitch is demonstrated to provide both modal confinement and wavelength selectivity within a hybrid III-V on a silicon waveguide. The wavelength-selective behavior stems from finely tuned larger holes. Such biperiodic hybrid waveguides have been fabricated by oxide-free bonding III-V material on silicon and display well-defined stop bands. Such nanostructured waveguides offer the versatility for designing advanced optical functions within hybrid devices. Moreover, keeping the silicon waveguide surface planar, such nanostructured waveguides are compatible with electrical operation across the oxide-free hybrid interface.

  3. Slow-light Enhanced Correlated Photon-Pair Generation in Silicon

    CERN Document Server

    Xiong, C; Clark, Alex S; Grillet, Christian; Marshall, Graham D; Steel, M J; Li, Juntao; O'Faolain, Liam; Krauss, Thomas F; Rarity, John G; Eggleton, Benjamin J

    2011-01-01

    We report the generation of correlated photon pairs in the telecom C-band, at room temperature, from a dispersion-engineered silicon photonic crystal waveguide. The spontaneous four-wave mixing process producing the photon pairs is enhanced by slow-light propagation enabling an active device length of less than 100 {\\mu}m. With a coincidence to accidental ratio of 12.8, at a pair generation rate of 0.006 per pulse, this ultra-compact photon pair source is immediately applicable towards scalable quantum information processing realized on-chip.

  4. On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits.

    Science.gov (United States)

    Elshaari, Ali W; Zadeh, Iman Esmaeil; Fognini, Andreas; Reimer, Michael E; Dalacu, Dan; Poole, Philip J; Zwiller, Val; Jöns, Klaus D

    2017-08-30

    Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.

  5. Silicon nanowires in polymer nanocomposites for photovoltaic hybrid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Dkhil, S., E-mail: sadok.bendekhil@gmail.com [Laboratoire Physique des Materiaux, Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Ingenierie des Materiaux Polymeres, IMP, UMR CNRS 5223, Universite Claude Bernard - Lyon 1, 15, boulevard Latarjet, 69622 Villeurbanne (France); Bourguiga, R. [Laboratoire Physique des Materiaux, Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Davenas, J. [Ingenierie des Materiaux Polymeres, IMP, UMR CNRS 5223, Universite Claude Bernard - Lyon 1, 15, boulevard Latarjet, 69622 Villeurbanne (France); Cornu, D. [Institut Europeen des Membranes, UMR CNRS 5635, Ecole Nationale superieure de Chimie, Universite de Montpellier, 1919 route de Mende, F34000 Montpellier (France)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Hybrid solar cells based on blends of poly(N-vinylcarbazole) and silicon nanowires have been fabricated. Black-Right-Pointing-Pointer We have investigated the charge transfer between PVK and SiNWs by the way of the quenching of the PVK photoluminescence. Black-Right-Pointing-Pointer The relation between the morphology of the composite thin films and the charge transfer between SiNWs and PVK has been examined. Black-Right-Pointing-Pointer We have investigated the effects of SiNWs concentration on the photovoltaic characteristics leading to the optimization of a critical SiNWs concentration. - Abstract: Hybrid thin films combining the high optical absorption of a semiconducting polymer film and the electronic properties of silicon fillers have been investigated in the perspective of the development of low cost solar cells. Bulk heterojunction photovoltaic materials based on blends of a semiconductor polymer poly(N-vinylcarbazole) (PVK) as electron donor and silicon nanowires (SiNWs) as electron acceptor have been studied. Composite PVK/SiNWs films were cast from a common solvent mixture. UV-visible spectrometry and photoluminescence of the composites have been studied as a function of the SiNWs concentration. Photoluminescence spectroscopy (PL) shows the existence of a critical SiNWs concentration of about 10 wt % for PL quenching corresponding to the most efficient charge pair separation. The photovoltaic (PV) effect has been studied under illumination. The optimum open-circuit voltage V{sub oc} and short-circuit current density J{sub sc} are obtained for 10 wt % SiNWs whereas a degradation of these parameters is observed at higher SiNWs concentrations. These results are correlated to the formation of aggregates in the composite leading to recombination of the photogenerated charge pairs competing with the dissociation mechanism.

  6. Silicon Photonics Integrated Circuits for 5th Generation mm-Wave Wireless Communications

    DEFF Research Database (Denmark)

    Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applicability...

  7. Optical properties of one-dimensional photonic crystals obtained by micromatchining silicon (a review)

    Science.gov (United States)

    Tolmachev, V. A.

    2017-04-01

    The theoretical and experimental investigations of photonic band gaps in one-dimensional photonic crystals created by micromatchining silicon, which have been performed by the author as part of his doctoral dissertation, are presented. The most important result of the work is the development of a method of modeling photonic crystals based on photonic band gap maps plotted in structure-property coordinates, which can be used with any optical materials and in any region of electromagnetic radiation, and also for nonperiodic structures. This method made it possible to realize the targeted control of the optical contrast of photonic crystals and to predict the optical properties of optical heterostructures and three-component and composite photonic crystals. The theoretical findings were experimentally implemented using methods of micromatchining silicon, which can be incorporated into modern technological lines for the production of microchips. In the IR spectra of a designed and a fabricated optical heterostructure (a composite photonic crystal), extended bands with high reflectivities were obtained. In a Si-based three-component photonic crystal, broad transmission bands and photonic band gaps in the middle IR region have been predicted and experimentally demonstrated for the first time. Si-liquid crystal periodic structures with electric-field tunable photonic band-gap edges have been investigated. The one-dimensional photonic crystals developed based on micromatchining silicon can serve as a basis for creating components of optical processors, as well as highly sensitive chemical and biological sensors in a wide region of the IR spectrum (from 1 to 20 μm) for lab-on-a-chip applications.

  8. Optical Isolation Can Occur in Linear and Passive Silicon Photonic Structures

    CERN Document Server

    Wang, Chen

    2012-01-01

    On-chip optical isolators play a key role in optical communications and computing based on silicon integrated photonic structures. Recently there have raised great attentions and hot controversies upon isolation of light via linear and passive photonic structures. Here we analyze the optical isolation properties of a silicon photonic crystal slab heterojunction diode by comparing the forward transmissivity and round-trip reflectivity of in-plane infrared light across the structure. The round-trip reflectivity is much smaller than the forward transmissivity, justifying good isolation. The considerable effective nonreciprocal transport of in-plane signal light in the linear and passive silicon optical diode is attributed to the information dissipation and selective modal conversion in the multiple-channel structure and has no conflict with reciprocal principle.

  9. Silicon photonic crystal cavity enhanced second-harmonic generation from monolayer WSe2

    Science.gov (United States)

    Fryett, Taylor K.; Seyler, Kyle L.; Zheng, Jiajiu; Liu, Chang-Hua; Xu, Xiaodong; Majumdar, Arka

    2017-03-01

    Nano-resonators integrated with two-dimensional materials (e.g. transition metal dichalcogenides) have recently emerged as a promising nano-optoelectronic platform. Here we demonstrate resonator-enhanced second-harmonic generation (SHG) in tungsten diselenide using a silicon photonic crystal cavity. By pumping the device with ultrafast laser pulses near the cavity mode at the telecommunication wavelength, we observe a near visible SHG with a narrow linewidth and near unity linear polarization, originated from the coupling of the pump photon to the cavity mode. The observed SHG is enhanced by factor of ∼200 compared to a bare monolayer on silicon. Our results imply the efficacy of cavity integrated monolayer materials for nonlinear optics and the potential of building a silicon-compatible second-order nonlinear integrated photonic platform.

  10. Silicon photonic crystal cavity enhanced second-harmonic generation from monolayer WSe2

    CERN Document Server

    Fryett, Taylor K; Zheng, Jiajiu; Liu, Chang-Hua; Xu, Xiaodong; Majumdar, Arka

    2016-01-01

    Nano-resonator integrated with two-dimensional materials (e.g. transition metal dichalcogenides) have recently emerged as a promising nano-optoelectronic platform. Here we demonstrate resonatorenhanced second-harmonic generation (SHG) in tungsten diselenide using a silicon photonic crystal cavity. By pumping the device with the ultrafast laser pulses near the cavity mode at the telecommunication wavelength, we observe a near visible SHG with a narrow linewidth and near unity linear polarization, originated from the coupling of the pump photon to the cavity mode. The observed SHG is enhanced by factor of ~200 compared to a bare monolayer on silicon. Our results imply the efficacy of cavity integrated monolayer materials for nonlinear optics and the potential of building a silicon-compatible second-order nonlinear integrated photonic platform.

  11. Energy-efficient tunable silicon photonic micro-resonator with graphene transparent nano-heaters

    CERN Document Server

    Yu, Longhai; Dai, Daoxin; He, Sailing

    2015-01-01

    Thermally-tuning silicon micro-cavities are versatile and beneficial elements in low-cost large-scale photonic integrated circuits (PICs). Traditional metal heaters used for thermal tuning in silicon micro-cavities usually need a thick SiO2 upper-cladding layer, which will introduce some disadvantages including low response speed, low heating efficiency, low achievable temperature and complicated fabrication processes. In this paper, we propose and experimentally demonstrate thermally-tuning silicon micro-disk resonators by introducing graphene transparent nano-heaters, which contacts the silicon core directly without any isolator layer. This makes the graphene transparent nano-heater potentially to have excellent performances in terms of the heating efficiency, the temporal response and the achievable temperature. It is also shown that the graphene nano-heater is convenient to be used in ultrasmall photonic integrated devices due to the single-atom thickness and excellent flexibility of graphene. Both experi...

  12. Nonlinear Silicon Photonic Signal Processing Devices for Future Optical Networks

    Directory of Open Access Journals (Sweden)

    Cosimo Lacava

    2017-01-01

    Full Text Available In this paper, we present a review on silicon-based nonlinear devices for all optical nonlinear processing of complex telecommunication signals. We discuss some recent developments achieved by our research group, through extensive collaborations with academic partners across Europe, on optical signal processing using silicon-germanium and amorphous silicon based waveguides as well as novel materials such as silicon rich silicon nitride and tantalum pentoxide. We review the performance of four wave mixing wavelength conversion applied on complex signals such as Differential Phase Shift Keying (DPSK, Quadrature Phase Shift Keying (QPSK, 16-Quadrature Amplitude Modulation (QAM and 64-QAM that dramatically enhance the telecom signal spectral efficiency, paving the way to next generation terabit all-optical networks.

  13. Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation

    CERN Document Server

    Chen, Charlton J; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

    2011-01-01

    We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 mm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ~ 30 mW laser powers. Over this tuning range, the cavity Q decreases from 3.2\\times10^5 to 1.2\\times10^5. Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

  14. Controlling the spectrum of photons generated on a silicon nanophotonic chip

    Science.gov (United States)

    Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

    2014-11-01

    Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range.

  15. Controlling the spectrum of photons generated on a silicon nanophotonic chip.

    Science.gov (United States)

    Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

    2014-11-20

    Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range.

  16. Comprehensive analysis of passive generation of parabolic similaritons in tapered hydrogenated amorphous silicon photonic wires.

    Science.gov (United States)

    Mei, Chao; Li, Feng; Yuan, Jinhui; Kang, Zhe; Zhang, Xianting; Yan, Binbin; Sang, Xinzhu; Wu, Qiang; Zhou, Xian; Zhong, Kangping; Wang, Liang; Wang, Kuiru; Yu, Chongxiu; Wai, P K A

    2017-06-19

    Parabolic pulses have important applications in both basic and applied sciences, such as high power optical amplification, optical communications, all-optical signal processing, etc. The generation of parabolic similaritons in tapered hydrogenated amorphous silicon photonic wires at telecom (λ ~ 1550 nm) and mid-IR (λ ≥ 2100 nm) wavelengths is demonstrated and analyzed. The self-similar theory of parabolic pulse generation in passive waveguides with increasing nonlinearity is presented. A generalized nonlinear Schrödinger equation is used to describe the coupled dynamics of optical field in the tapered hydrogenated amorphous silicon photonic wires with either decreasing dispersion or increasing nonlinearity. The impacts of length dependent higher-order effects, linear and nonlinear losses including two-photon absorption, and photon-generated free carriers, on the pulse evolutions are characterized. Numerical simulations show that initial Gaussian pulses will evolve into the parabolic pulses in the waveguide taper designed.

  17. Synthesis optimization of photonic crystals based on silicon and vanadium dioxides

    Science.gov (United States)

    Akhmadeev, A. A.; Sarandaev, E. V.; Salakhov, M. Kh

    2013-08-01

    The photonic crystal is the material which structure is characterized by periodic distribution of refraction index in the spatial directions, which have the photonic band gaps in a spectrum of own electromagnetic states. There are numerous approaches of the creation of photonic crystals. In the present the optimal conditions of synthesis of photonic crystals based on silicon dioxide as well as the inverse photonic crystals based on vanadium dioxide are investigated. It is known that the synthesis process is influenced by many different factors. We have studied the dependence of the particle size on the concentration of reagents, as well as on the duration of the reaction. These studies are important for the production of samples of photonic crystals with a definite structure.

  18. Optimization and applications of planar silicon-based photonic crystal devices

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Frandsen, Lars Hagedorn; Burgos Leon, Juan;

    2005-01-01

    such as topology optimization. We have also investigated a new device concept for coarse wavelength division de-multiplexing based on planar photonic crystal waveguides. The filtering of the wavelength channels has been realized by shifting the cut-off frequency of the fundamental photonic band gap mode......Very low propagation losses in straight planar photonic crystal waveguides have previously been reported. A next natural step is to add functionality to the photonic crystal waveguides and create ultra compact optical components. We have designed and fabricated such structures in a silicon......-on-insulator material. The photonic crystal is defined by holes with diameter 250 nm arranged in a triangular lattice having lattice constant 400 nm. Leaving out single rows of holes creates the planar photonic crystal waveguides. Different types of couplers and splitters, aswell as 60. 90 and 120 degree bends have...

  19. Surface Encapsulation for Low-Loss Silicon Photonics

    CERN Document Server

    Borselli, M; Michael, C P; Henry, M D; Painter, Oskar

    2007-01-01

    Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose. Based on previous work in silicon photovoltaics, coatings of SiNx and SiO2 are applied under varying deposition and annealing conditions. A short dry thermal oxidation followed by a long high-temperature N2 anneal is found to be most effective at long-term encapsulation and reduction of interface absorption. Minimization of the optical loss is attributed to simultaneous reduction in sub-bandgap silicon surface states and hydrogen in the capping material.

  20. Two-photon excitation of porphyrin-functionalized porous silicon nanoparticles for photodynamic therapy.

    Science.gov (United States)

    Secret, Emilie; Maynadier, Marie; Gallud, Audrey; Chaix, Arnaud; Bouffard, Elise; Gary-Bobo, Magali; Marcotte, Nathalie; Mongin, Olivier; El Cheikh, Khaled; Hugues, Vincent; Auffan, Mélanie; Frochot, Céline; Morère, Alain; Maillard, Philippe; Blanchard-Desce, Mireille; Sailor, Michael J; Garcia, Marcel; Durand, Jean-Olivier; Cunin, Frédérique

    2014-12-01

    Porous silicon nanoparticles (pSiNPs) act as a sensitizer for the 2-photon excitation of a pendant porphyrin using NIR laser light, for imaging and photodynamic therapy. Mannose-functionalized pSiNPs can be vectorized to MCF-7 human breast cancer cells through a mannose receptor-mediated endocytosis mechanism to provide a 3-fold enhancement of the 2-photon PDT effect.

  1. Correlated photon pair generation in low-loss double-stripe silicon nitride waveguides

    CERN Document Server

    Zhang, Xiang; Xiong, Chunle; Eggleton, Benjamin J

    2016-01-01

    We demonstrate correlated photon pair generation via spontaneous four-wave mixing in a low-loss double-stripe silicon nitride waveguide with a coincidence-to-accidental ratio over 10. The coincidence-to-accidental ratio is limited by spontaneous Raman scattering, which can be mitigated by cooling in the future. This demonstration suggests that this waveguide structure is a potential platform to develop integrated quantum photonic chips for quantum information processing.

  2. Coherent supercontinuum generation in a silicon photonic wire in the telecommunication wavelength range.

    Science.gov (United States)

    Leo, François; Gorza, Simon-Pierre; Coen, Stéphane; Kuyken, Bart; Roelkens, Gunther

    2015-01-01

    We demonstrate a fully coherent supercontinuum spectrum spanning 500 nm from a silicon-on-insulator photonic wire waveguide pumped at 1575 nm wavelength. An excellent agreement with numerical simulations is reported. The simulations also show that a high level of two-photon absorption can essentially enforce the coherence of the spectral broadening process irrespective of the pump pulse duration.

  3. Tunable narrowband microwave photonic filter created by stimulated Brillouin scattering from a Silicon nanowire

    CERN Document Server

    Casas-Bedoya, Alvaro; Pagani, Mattia; Marpaung, David; Eggleton, Benjamin J

    2015-01-01

    We demonstrate the first functional signal processing device based on stimulated Brillouin scattering in a silicon nanowire. We use only 1 dB of on-chip SBS gain to create an RF photonic notch filter with 48 dB of suppression, 98 MHz linewidth, and 6 GHz frequency tuning. This device has potential applications in on-chip microwave signal processing and establishes the foundation for the first CMOS-compatible high performance RF photonic filter.

  4. Spontaneous Emission Control in a Tunable Hybrid Photonic System

    CERN Document Server

    Frimmer, Martin

    2013-01-01

    We experimentally demonstrate control of the rate of spontaneous emission in a tunable hybrid photonic system that consists of two canonical building blocks for spontaneous emission control, an optical antenna and a mirror, each providing a modification of the local density of optical states (LDOS).We couple fluorophores to a plasmonic antenna to create a superemitter with an enhanced decay rate. In a superemitter analog of the seminal Drexhage experiment we probe the LDOS of a nanomechanically approached mirror. Due to the electrodynamic interaction of the antenna with its own mirror image the superemitter traces the inverse LDOS of the mirror, in stark contrast to a bare source, whose decay rate is proportional to the mirror LDOS.

  5. Spontaneous emission control in a tunable hybrid photonic system.

    Science.gov (United States)

    Frimmer, Martin; Koenderink, A Femius

    2013-05-24

    We experimentally demonstrate control of the rate of spontaneous emission in a tunable hybrid photonic system that consists of two canonical building blocks for spontaneous emission control, an optical antenna and a mirror, each providing a modification of the local density of optical states (LDOS). We couple fluorophores to a plasmonic antenna to create a superemitter with an enhanced decay rate. In a superemitter analog of the seminal Drexhage experiment we probe the LDOS of a nanomechanically approached mirror. Because of the electrodynamic interaction of the antenna with its own mirror image, the superemitter traces the inverse of the LDOS enhancement provided by the mirror, in stark contrast to a bare source, whose decay rate is proportional to the mirror LDOS.

  6. Enhancement and Inhibition of Spontaneous Photon Emission by Resonant Silicon Nanoantennas

    CERN Document Server

    Bouchet, Dorian; Proust, Julien; Gallas, Bruno; Ozerov, Igor; Garcia-Parajo, Maria F; Gulinatti, Angelo; Rech, Ivan; De Wilde, Yannick; Bonod, Nicolas; Krachmalnicoff, Valentina; Bidault, Sébastien

    2016-01-01

    We demonstrate that subwavelength silicon resonators can increase and decrease the emission decay rates of fluorescent molecules at room temperature. Using scanning probe microscopy, we analyze the near-field interaction between a fluorescent nanosphere and silicon nanodisks in three dimensions, highlighting the ability of dielectric antennas to increase the far-field collection of emitted photons, in excellent agreement with numerical simulations. Our study demonstrates the potential of silicon-based resonators for the low-loss manipulation of solid-state emitters at the nanoscale.

  7. Ultra-high-speed wavelength conversion in a silicon photonic chip

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Galili, Michael

    2011-01-01

    We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...

  8. Fabrication and optical characterization of macroporous silicon photonic crystals

    OpenAIRE

    Balbo, Matteo

    2014-01-01

    The computer revolution experienced in recent years has been possible thanks to semiconductor materials, such as silicon, germanium and gallium arsenide. The success of the silicon-based microelectronics is due to the ability to integrate multiple elements on the same chip such as processors, memories, and interfaces. However, the increasing miniaturization and the realization of faster devices have revealed the difficulty to overcome the intrinsic limits of these materials. For example, devi...

  9. Pixel hybrid photon detectors for the ring imaging Cherenkov detectors of LHCb

    CERN Document Server

    Somerville, L

    2005-01-01

    A Pixel Hybrid Photon Detector (pixel HPD) has been developed for the LHCb Ring Imaging Cherenkov (RICH) detectors. The pixel HPD is a vacuum tube with a multi-alkali photocathode, high-voltage cross- focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a CMOS readout chip; the readout chip is thus fully encapsulated in the device. The pixel HPD fulfils the stringent requirements for the RICH detectors of LHCb, combining single photon sensitivity, high signal-to-noise ratio and fast readout with an ~8cm diameter active area and an effective pixel size of 2.5mm 2.5mm at the photocathode. The performance and characteristics of two prototype pixel HPDs have been studied in laboratory measurements and in recent beam tests. The results of all measurements agree with expectations and fulfil the LHCb RICH requirements. In readiness for production of the ~500pixel HPDs for the RICH detectors, a test programme was designed and implemented to ensure component quality control at eac...

  10. Performance of hybrid photon detector prototypes with 80% active area for the RICH counters of LHCb

    CERN Document Server

    Albrecht, E; Barber, G J; Bibby, J H; Campbell, M; Duane, A; Gys, Thierry; Montenegro, J; Piedigrossi, D; Schomaker, R; Snoeys, W; Wotton, S A; Wyllie, Ken H

    2000-01-01

    We report on the ongoing work towards a hybrid photon detector with integrated Si pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based on an electrostatically focussed image intensifier tube geometry where the image is de-magnified by a factor of ~5. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The performance of full-scale prototypes equipped with 61-pixel anodes and external analogue readout is presented. The average signal-to-noise ratio is ~11 with a peaking time of 1.2 mu s. The tube active-to-total surface ratio is 81.7%, which meets the LHCb requirements. The spatial precision is measured to be better than 90 mu m. A cluster of three such tubes has been installed in the LHCb RICH 1 prototype where Cherenkov gas rings have been successfully detected. Progress towards the encapsulation of new pixel electronics into a tube is also reported. In pa...

  11. Study of silicon strip waveguides with diffraction gratings and photonic crystals tuned to a wavelength of 1.5 µm

    Energy Technology Data Exchange (ETDEWEB)

    Barabanenkov, M. Yu., E-mail: barab@iptm.ru; Vyatkin, A. F.; Volkov, V. T.; Gruzintsev, A. N.; Il’in, A. I.; Trofimov, O. V. [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)

    2015-12-15

    Single-mode submicrometer-thick strip waveguides on silicon-on-insulator substrates, fabricated by silicon-planar-technology methods are considered. To solve the problem of 1.5-µm wavelength radiation input-output and its frequency filtering, strip diffraction gratings and two-dimensional photonic crystals are integrated into waveguides. The reflection and transmission spectra of gratings and photonic crystals are calculated. The waveguide-mode-attenuation coefficient for a polycrystalline silicon waveguide is experimentally estimated.

  12. Photon-assisted Andreev tunneling through a mesoscopic hybrid system

    Science.gov (United States)

    Sun, Qing-Feng; Wang, Jian; Lin, Tsung-Han

    1999-05-01

    The electron tunneling through a mesoscopic hybrid system, a normal-metal-quantum-dot-superconductor (N-QD-S) system where the intradot Coulomb interaction is neglected, in the presence of the time-varying external fields, has been investigated. By using the nonequilibrium Green-function method, the time-dependent current jL(t) and the average current are derived. The photon-assisted Andreev tunneling (PAAT) and the normal photon-assisted tunneling (PAT) are studied in detail. In the case of ħω vs the gate voltage exhibits a series of equal-interval PAAT peaks, with negative peaks on the left-hand side and positive peaks on the right-hand side of the original resonant peak in the absence of the external fields. This is very different from the N-QD-N system. While for ħω>Δ, various PAT processes cause a rather complicated dependence of the current on the gate voltage. In addition, the current-bias-voltage characteristics become more complicated: each Andreev reflection peak is split into side-band peaks and each current plateau is split into substep plateaus.

  13. Hybrid Silicon Nanostructures with Conductive Ligands and Their Microscopic Conductivity

    Science.gov (United States)

    Bian, Tiezheng; Peck, Jamie N.; Cottrell, Stephen P.; Jayasooriya, Upali A.; Chao, Yimin

    2016-09-01

    Silicon nanoparticles (SiNPs) functionalized with conjugated molecules are a promising potential pathway for generating an alternative category of thermoelectric materials. While the thermoelectric performance of materials based on phenylacetylene-capped SiNPs has been proven, their low conductivity is still a problem for their general application. A muon study of phenylacetylene-capped SiNPs was recently carried out using the HIFI spectrometer at the Rutherford Appleton Laboratory, measuring the avoided level-crossing spectra as a function of temperature. The results show a reduction in the measured line width of the resonance above room temperature, suggesting an activated behaviour for this system. This study shows that the muon study could be a powerful method for investigating microscopic conductivity of hybrid thermoelectric materials.

  14. Integration of hybrid silicon lasers and electroabsorption modulators.

    Science.gov (United States)

    Sysak, Matthew N; Anthes, Joel O; Bowers, John E; Raday, Omri; Jones, Richard

    2008-08-18

    We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of 2GHz with 5 dB DC extinction.

  15. Photon counting modules using RCA silicon avalanche photodiodes

    Science.gov (United States)

    Lightstone, Alexander W.; Macgregor, Andrew D.; Macsween, Darlene E.; Mcintyre, Robert J.; Trottier, Claude; Webb, Paul P.

    1989-01-01

    Avalanche photodiodes (APD) are excellent small area, solid state detectors for photon counting. Performance possibilities include: photon detection efficiency in excess of 50 percent; wavelength response from 400 to 1000 nm; count rate to 10 (exp 7) counts per sec; afterpulsing at negligible levels; timing resolution better than 1 ns. Unfortunately, these performance levels are not simultaneously available in a single detector amplifier configuration. By considering theoretical performance predictions and previous and new measurements of APD performance, the anticipated performance of a range of proposed APD-based photon counting modules is derived.

  16. High-performance silicon photonics technology for telecommunications applications.

    Science.gov (United States)

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

    2014-04-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

  17. Stabilization and Frequency Control of a DFB Laser With a Tunable Optical Reflector Integrated in a Silicon Photonics PIC

    Science.gov (United States)

    Hauck, Johannes; Schrammen, Matthias; Romero-Garcia, Sebastian; Muller, Juliana; Shen, Bin; Richter, Jens; Merget, Florian; Witzens, Jeremy

    2016-12-01

    We investigate the effect of tunable optical feedback on a commercial DFB laser edge coupled to a Silicon Photonics planar integrated circuit in which a tunable reflector has been implemented by means of a ring resonator based add-drop multiplexer. Controlled optical feedback allows for fine-tuning of the laser oscillation frequency. Under certain conditions it also allows suppression of bifurcation modes triggered by reflections occurring elsewhere on the chip. A semi-analytical model describing laser dynamics under combined optical feedback from the input facet of the edge coupler and from the tunable on-chip reflector fits the measurements. Compensation of detrimental effects from reflections induced elsewhere on a transceiver chip may allow moving isolators downstream in future communications systems, facilitating direct hybrid laser integration in Silicon Photonics chips, provided a suitable feedback signal for a control system can be identified. Moreover, the optical frequency tuning at lower feedback levels can be used to form a rapidly tunable optical oscillator as part of an optical phase locked loop, circumventing the problem of the thermal to free carrier effect crossover in the FM response of injection current controlled semiconductor laser diodes.

  18. Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection

    Directory of Open Access Journals (Sweden)

    André Darveau

    2007-09-01

    Full Text Available The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS. In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

  19. Active zinc-blende III-nitride photonic structures on silicon

    Science.gov (United States)

    Sergent, Sylvain; Kako, Satoshi; Bürger, Matthias; Blumenthal, Sarah; Iwamoto, Satoshi; As, Donat Josef; Arakawa, Yasuhiko

    2016-01-01

    We use a layer transfer method to fabricate free-standing photonic structures in a zinc-blende AlN epilayer grown by plasma-assisted molecular beam epitaxy on a 3C-SiC pseudosubstrate and containing GaN quantum dots. The method leads to the successful realization of microdisks, nanobeam photonic crystal cavities, and waveguides integrated on silicon (100) and operating at short wavelengths. We assess the quality of such photonic elements by micro-photoluminescence spectroscopy in the visible and ultraviolet ranges, and extract the absorption coefficient of ZB AlN membranes (α ˜ (2-5) × 102 cm-1).

  20. Enhanced bandgap in annular photonic-crystal silicon-on-insulator asymmetric slabs.

    Science.gov (United States)

    Hou, Jin; Citrin, D S; Wu, Huaming; Gao, Dingshan; Zhou, Zhiping

    2011-06-15

    Photonic band structures of annular photonic-crystal (APC) silicon-on-insulator (SOI) asymmetric slabs with finite thickness were investigated by the three-dimensional plane-wave expansion method. The results show that for a broad range of air-volume filling factors, APC slabs can exhibit a significantly larger bandgap than conventional circular-hole photonic-crystal (PC) slabs. Bandgap enhancements over conventional air hole PC SOI slabs as large as twofold are predicted for low air-volume filling factors below 15%. This desirable behavior suggests a potential for APC SOI slabs to serve as the basis of various optical cavities, waveguides, and mirrors.

  1. Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers.

    Science.gov (United States)

    Zhang, Jingyuan Linda; Ishiwata, Hitoshi; Babinec, Thomas M; Radulaski, Marina; Müller, Kai; Lagoudakis, Konstantinos G; Dory, Constantin; Dahl, Jeremy; Edgington, Robert; Soulière, Veronique; Ferro, Gabriel; Fokin, Andrey A; Schreiner, Peter R; Shen, Zhi-Xun; Melosh, Nicholas A; Vučković, Jelena

    2016-01-13

    We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV(-) color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV(-) on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV(-) centers. Scanning confocal photoluminescence measurements reveal optically active SiV(-) lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV(-) lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV(-) centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

  2. Mode-evolution-based polarization rotation and coupling between silicon and hybrid plasmonic waveguides

    Science.gov (United States)

    Kim, Sangsik; Qi, Minghao

    2015-12-01

    Hybrid plasmonic (HP) modes allow strong optical field confinement and simultaneously low propagation loss, offering a potentially compact and efficient platform for on-chip photonic applications. However, their implementation is hampered by the low coupling efficiency between dielectric guided modes and HP modes, caused by mode mismatch and polarization difference. In this work, we present a mode-evolution-based polarization rotation and coupling structure that adiabatically rotates the TE mode in a silicon waveguide and couples it to the HP mode in a strip silicon-dielectric-metal waveguide. Simulation shows that high coupling factors of 92%, 78%, 75%, and 73% are achievable using Ag, Au, Al, and Cu as the metal cap, respectively, at a conversion length of about 5 μm. For an extremely broad wavelength range of 1300-1800 nm, the coupling factor is >64% with a Ag metal cap, and the total back-reflection power, including all the mode reflections and backscattering, is below -40 dB, due to the adiabatic mode transition. Our device does not require high-resolution lithography and is tolerant to fabrication variations and imperfections. These attributes together make our device suitable for optical transport systems spanning all telecommunication bands.

  3. Magneto-optical non-reciprocal devices in silicon photonics

    Directory of Open Access Journals (Sweden)

    Yuya Shoji

    2014-01-01

    Full Text Available Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.

  4. In-depth study of single photon time resolution for the Philips digital silicon photomultiplier

    Science.gov (United States)

    Liu, Z.; Gundacker, S.; Pizzichemi, M.; Ghezzi, A.; Auffray, E.; Lecoq, P.; Paganoni, M.

    2016-06-01

    The digital silicon photomultiplier (SiPM) has been commercialised by Philips as an innovative technology compared to analog silicon photomultiplier devices. The Philips digital SiPM, has a pair of time to digital converters (TDCs) connected to 12800 single photon avalanche diodes (SPADs). Detailed measurements were performed to understand the low photon time response of the Philips digital SiPM. The single photon time resolution (SPTR) of every single SPAD in a pixel consisting of 3200 SPADs was measured and an average value of 85 ps full width at half maximum (FWHM) was observed. Each SPAD sends the signal to the TDC with different signal propagation time, resulting in a so called trigger network skew. This distribution of the trigger network skew for a pixel (3200 SPADs) has been measured and a variation of 50 ps FWHM was extracted. The SPTR of the whole pixel is the combination of SPAD jitter, trigger network skew, and the SPAD non-uniformity. The SPTR of a complete pixel was 103 ps FWHM at 3.3 V above breakdown voltage. Further, the effect of the crosstalk at a low photon level has been studied, with the two photon time resolution degrading if the events are a combination of detected (true) photons and crosstalk events. Finally, the time response to multiple photons was investigated.

  5. Focused ion beam milling of photonic crystals in silicon on insulator

    NARCIS (Netherlands)

    Hu, Wenbin; Hopman, Wico; Ridder, de René

    2009-01-01

    A photonic crystal slab, consisting of an array of circular sub-micron diameter holes in Silicon on Insulator (SOI), has been fabricated using focused ion beam (FIB) milling. This application requires the sidewalls of the holes to be very smooth and as nearly perpendicular to the slab as possible. T

  6. Silicon photonic micro-ring resonators to sense strain and ultrasound

    NARCIS (Netherlands)

    Westerveld, W.J.

    2014-01-01

    We demonstrated that photonic micro-ring resonators can be used in micro-machined ultrasound microphones. This might cause a breakthrough in array transducers for ultrasonography; first because optical multiplexing allows array interrogation via one optical fiber and second because the silicon-on-in

  7. Absorption spectroscopy of glucose based on a silicon photonics evanescent sensor

    OpenAIRE

    2013-01-01

    We present a silicon photonics evanescent sensor for glucose absorption spectroscopy. The important design aspects of this miniature sensor are discussed as well as the experimental challenges. We demonstrate detection of glucose down to 14 mmol/L, close to the physiological range of blood glucose in humans.

  8. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld;

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  9. Hybridization of photon-plasmon modes in metal-coated microtubular cavities

    CERN Document Server

    Yin, Yin; Engemaier, Vivienne; Giudicatti, Silvia; Naz, Ehsan Saei Ghareh; Ma, Libo; Schmidt, Oliver G

    2016-01-01

    The coupling of resonant light and surface plasmons in metal layer coated optical microcavities results in the formation of hybrid photon-plasmon modes. Here, we comprehensively investigate the hybridization mechanism of photon-plasmon modes based on opto-plasmonic microtubular cavities. By changing the cavity structure and the metal layer thickness, weakly, moderately and strongly hybridized resonant modes are demonstrated depending on the photon-plasmon coupling strength. An effective potential approach is applied to illustrate the hybridization of photon-plasmon modes relying on the competition between light confinement by the cavity wall and the potential barrier introduced by the metal layer. Our work reveals the basic physical mechanisms for the generation of hybrid modes in metal-coated whispering-gallery-mode microcavities, and is of importance for the study of enhanced light-matter interactions and potential sensing applications.

  10. Deterministic aperiodic composite lattice-structured silicon thin films for photon management

    CERN Document Server

    Xavier, Jolly; Becker, Christiane

    2016-01-01

    Exotic manipulation of the flow of photons in nanoengineered semiconductor materials with an aperiodic distribution of nanostructures plays a key role in efficiency-enhanced and industrially viable broadband photonic technologies. Through a generic deterministic nanotechnological route, in addition to periodic, transversely quasicrystallographic or disordered random photonic lattices, here we show scalable nanostructured semiconductor thin films on large area nanoimprinted substrates up to 4cm^2 with advanced functional features of aperiodic composite nanophotonic lattices having tailorable supercell tiles. The richer Fourier spectra of the presented artificially nanostructured materials with well-defined lattice point morphologies are designed functionally akin to two-dimensional incommensurate intergrowth aperiodic lattices-comprising periodic photonic crystals and in-plane quasicrystals as subgroups. The composite photonic lattice-structured crystalline silicon thin films with tapered nanoholes or nanocone...

  11. Engineered silicon ring resonator for wavelength multiplexed photon-pair generation

    CERN Document Server

    Mazeas, Florent; Bentivegna, Marco; Kaiser, Florian; Aktas, Djeylan; Zhang, Weiwei; Ramos, Carlos Alonso; Bin-Ngah, Lutfi-Arif; Lunghi, Tommaso; Picholle, Éric; Belabas-Plougonven, Nadia; Roux, Xavier Le; Cassan, Éric; Marris-Morini, Delphine; Vivien, Laurent; Sauder, Grégory; Labonté, Laurent; Tanzilli, Sébastien

    2016-01-01

    We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400 pairs of entangled photons /s/MHz for 500 {\\mu}W pump power. Additionally, the resonator has been engineered so as to generate a frequency comb structure compatible with standard telecom dense wavelength division multiplexers. We demonstrate high-purity energy-time entanglement, i.e., free of photonic noise, with near perfect raw visibilities (> 98%) between various channel pairs in the telecom C-band. Such a compact source stands as a path towards more complex quantum photonic circuits dedicated to quantum communication systems.

  12. Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

    Science.gov (United States)

    Thomas, O; Yuan, Z L; Shields, A J

    2012-01-24

    Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

  13. High-optical-quality blends of anionic polymethine salts and polycarbonate with enhanced third-order non-linearities for silicon-organic hybrid devices.

    Science.gov (United States)

    Li, Zhong'an; Liu, Yang; Kim, Hyeongeu; Hales, Joel M; Jang, Sei-Hum; Luo, Jingdong; Baehr-Jones, Tom; Hochberg, Michael; Marder, Seth R; Perry, Joseph W; Jen, Alex K-Y

    2012-11-20

    A series of anionic polymethine dyes with different aromatic counterions are prepared to improve their compatibility as guests in an amorphous polycarbonate host. When they are used as the cladding material for silicon hybrid slot waveguides, four-wave mixing wavelength conversion and two-photon absorption-based optical-power modulation are observed. Such guest-host materials may be attractive candidates for all-optical signal-processing applications.

  14. Optimization of metallic microheaters for high-speed reconfigurable silicon photonics.

    Science.gov (United States)

    Atabaki, A H; Shah Hosseini, E; Eftekhar, A A; Yegnanarayanan, S; Adibi, A

    2010-08-16

    The strong thermooptic effect in silicon enables low-power and low-loss reconfiguration of large-scale silicon photonics. Thermal reconfiguration through the integration of metallic microheaters has been one of the more widely used reconfiguration techniques in silicon photonics. In this paper, structural and material optimizations are carried out through heat transport modeling to improve the reconfiguration speed of such devices, and the results are experimentally verified. Around 4 micros reconfiguration time are shown for the optimized structures. Moreover, sub-microsecond reconfiguration time is experimentally demonstrated through the pulsed excitation of the microheaters. The limitation of this pulsed excitation scheme is also discussed through an accurate system-level model developed for the microheater response.

  15. Nonclassical correlation between optical and microwave photons in a hybrid electro-optomechanical system

    Science.gov (United States)

    Xie, Hong; Chen, Xiang; Lin, Gongwei; Lin, Xiumin

    2016-10-01

    A scheme to correlate optical and microwave photons is proposed in a hybrid electro-optomechanical system, where mechanical resonator is coupled to both optical and microwave fields. Analytical and numerical simulation results show that the cross-correlation function between Stokes and anti-Stokes photons strongly violates the Cauchy-Schwarz inequality, which confirms the nonclassical correlation between the optical and microwave photons. It is worth noting that the nonclassical photon pairs with vast different wavelengths, which may be useful for quantum communication, are generated under the experimentally accessible weak coupling limit rather than single-photon strong coupling regime. In addition, the protocol provides a possible route to combine the respective advantages of optical photons, microwave photons, and phonons in a hybrid electro-optomechanical system.

  16. Evaluation of a photon-counting hybrid pixel detector array with a synchrotron X-ray source

    CERN Document Server

    Ponchut, C; Fornaini, A; Graafsma, H; Maiorino, M; Mettivier, G; Calvet, D

    2002-01-01

    A photon-counting hybrid pixel detector (Medipix-1) has been characterized using a synchrotron X-ray source. The detector consists of a readout ASIC with 64x64 independent photon-counting cells of 170x170 mu m sup 2 pitch, bump-bonded to a 300 mu m thick silicon sensor, read out by a PCIbus-based electronics, and a graphical user interface (GUI) software. The intensity and the energy tunability of the X-ray source allow characterization of the detector in the time, space, and energy domains. The system can be read out on external trigger at a frame rate of 100 Hz with 3 ms exposure time per frame. The detector response is tested up to more than 7x10 sup 5 detected events/pixel/s. The point-spread response shows <2% crosstalk between neighboring pixels. Fine scanning of the detector surface with a 10 mu m beam reveals no loss in sensitivity between adjacent pixels as could result from charge sharing in the silicon sensor. Photons down to 6 keV can be detected after equalization of the thresholds of individu...

  17. Nonlinear Oscillations and Bifurcations in Silicon Photonic Microresonators

    CERN Document Server

    Abrams, Daniel M; Srinivasan, Kartik

    2013-01-01

    Silicon microdisks are optical resonators that can exhibit surprising nonlinear behavior. We present a new analysis of the dynamics of these resonators, elucidating the mathematical origin of spontaneous oscillations and deriving predictions for observed phenomena such as a frequency comb spectrum with MHz-scale repetition rate. We test predictions through laboratory experiment and numerical simulation.

  18. Silicon chip integrated photonic sensors for biological and chemical sensing

    Science.gov (United States)

    Chakravarty, Swapnajit; Zou, Yi; Yan, Hai; Tang, Naimei; Chen, Ray T.

    2016-03-01

    We experimentally demonstrate applications of photonic crystal waveguide based devices for on-chip optical absorption spectroscopy for the detection of chemical warfare simulant, triethylphosphate as well as applications with photonic crystal microcavity devices in the detection of biomarkers for pancreatic cancer in patient serum and cadmium metal ions in heavy metal pollution sensing. At mid-infrared wavelengths, we experimentally demonstrate the higher sensitivity of photonic crystal based structures compared to other nanophotonic devices such as strip and slot waveguides with detection down to 10ppm triethylphosphate. We also detected 5ppb (parts per billion) of cadmium metal ions in water at near-infrared wavelengths using established techniques for the detection of specific probe-target biomarker conjugation chemistries.

  19. Enhancement of Light Absorption in Thin Film Silicon Solar Cells with Metallic Grating and One-Dimensional Photonic Crystals

    Institute of Scientific and Technical Information of China (English)

    ZHENG Gai-Ge; XIAN Feng-Lin; LI Xiang-Yin

    2011-01-01

    We design an effective light trapping scheme through engineering metallic gratings and one-dimensional dielectric photonic crystals (PhCs) to increase the optical path length of light within the solar cells. This incorporation can result in broadband optical absorption enhancement not only for transverse magnetic polarized light but also for transverse-electric polarization. Even when no plasmonic mode can be excited, due to the high reflection of the PhCs, the absorption in the active region can still be enhanced. Rigorous coupled wave analysis results demonstrate that such a hybrid structure boosts the overall cell performance by increasing the light trapping capabilities and is especially effective at the silicon band edge. This kind of design can be used to increase the optical absorption over a wide spectral range and is relatively independent of the angle of incidence.%@@ We design an effective light trapping scheme through engineering metallic gratings and one-dimensional dielectric photonic crystals(PhCs) to increase the optical path length of light within the solar cells.This incorporation can result in broadband optical absorption enhancement not only for transverse magnetic polarized light but also for transverse-electric polarization.Even when no plasmonic mode can be excited,due to the high reflection of the PhCs,the absorption in the active region can still be enhanced.Rigorous coupled wave analysis results demonstrate that such a hybrid structure boosts the overall cell performance by increasing the light trapping capabilities and is especially effective at the silicon band edge.This kind of design can be used to increase the optical absorption over a wide spectral range and is relatively independent of the angle of incidence.

  20. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

  1. Broadband energy-efficient optical modulation by hybrid integration of silicon nanophotonics and organic electro-optic polymer

    CERN Document Server

    Zhang, Xingyu; Subbaraman, Harish; Luo, Jingdong; Jen, Alex K -Y; Chung, Chi-jui; Yan, Hai; Pan, Zeyu; Nelson, Robert L; Chen, Ray T

    2015-01-01

    Silicon-organic hybrid integrated devices have emerging applications ranging from high-speed optical interconnects to photonic electromagnetic-field sensors. Silicon slot photonic crystal waveguides (PCWs) filled with electro-optic (EO) polymers combine the slow-light effect in PCWs with the high polarizability of EO polymers, which promises the realization of high-performance optical modulators. In this paper, a broadband, power-efficient, low-dispersion, and compact optical modulator based on an EO polymer filled silicon slot PCW is presented. A small voltage-length product of V{\\pi}*L=0.282Vmm is achieved, corresponding to an unprecedented record-high effective in-device EO coefficient (r33) of 1230pm/V. Assisted by a backside gate voltage, the modulation response up to 50GHz is observed, with a 3-dB bandwidth of 15GHz, and the estimated energy consumption is 94.4fJ/bit at 10Gbit/s. Furthermore, lattice-shifted PCWs are utilized to enhance the optical bandwidth by a factor of ~10X over other modulators bas...

  2. Reducing the thermal stress in a heterogeneous material stack for large-area hybrid optical silicon-lithium niobate waveguide micro-chips

    Science.gov (United States)

    Weigel, P. O.; Mookherjea, S.

    2017-04-01

    The bonding of silicon-on-insulator (SOI) to lithium niobate-on-insulator (LNOI) is becoming important for a new category of linear and nonlinear micro-photonic optical devices. In studying the bonding of SOI to LNOI through benzocyclobutene (BCB), a popular interlayer bonding dielectric used in hybrid silicon photonic devices, we use thermal stress calculations to suggest that BCB thickness does not affect thermal stress in this type of structure, and instead, thermal stress can be mitigated satisfactorily by matching the handles of the SOI and LNOI. We bond LNOI with a silicon handle to a silicon chip, remove the handle on the LNOI side, and thermally cycle the bonded stack repeatedly from room temperature up to 300°C and back down without incurring thermal stress cracks, which do appear when using LNOI with a lithium niobate handle, regardless of the BCB thickness. We show that this process can be used to create many hybrid silicon-lithium niobate waveguiding structures on a single patterned SOI chip bonded to a large-area (16 mm × 4.2 mm) lithium niobate film.

  3. Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

    2016-01-01

    of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

  4. Silver nanoprisms/silicone hybrid rubber materials and their optical limiting property to femtosecond laser

    Science.gov (United States)

    Li, Chunfang; Liu, Miao; Jiang, Nengkai; Wang, Chunlei; Lin, Weihong; Li, Dongxiang

    2017-08-01

    Optical limiters against femtosecond laser are essential for eye and sensor protection in optical processing system with femtosecond laser as light source. Anisotropic Ag nanoparticles are expected to develop into optical limiting materials for femtosecond laser pulses. Herein, silver nanoprisms are prepared and coated by silica layer, which are then doped into silicone rubber to obtain hybrid rubber sheets. The silver nanoprisms/silicone hybrid rubber sheets exhibit good optical limiting property to femtosecond laser mainly due to nonlinear optical absorption.

  5. Nano- and micro-structured silicon for hybrid near-infrared photodetectors

    Science.gov (United States)

    Äńerek, V.; Głowacki, E. D.; Bednorz, M.; Demchyshyn, S.; Sariciftci, N. S.; Ivanda, M.

    2016-05-01

    Structuring surface and bulk of crystalline silicon on different length scales can significantly alter its properties and possibly improve the performance of opto-electronic devices and sensors based on silicon. Different dominant feature scales are responsible for modification of some of electronic and optical properties of silicon. Several easily reproducible chemical methods for facile structuring of silicon on nano and micro-scales, based on both electroless and anodic etching of silicon in hydrofluoric acid based etchants, and chemical anisotropic etching of silicon in basic environments, are presented. We show how successive micro and nano structuring creates hierarchical silicon surfaces, which can be used to simultaneously exploit the advantages of both structuring feature length scales. Finally, we demonstrate a large increase in photocurrent obtained from a hybrid structured silicon/organic near-infrared photodetector. Improved silicon/6,6'-dibromoindigo hybrid photodiodes were prepared by nano- and micro-structuring the silicon part of the heterojunction by wet chemical etching methods. Photocurrent and spectral responsivity were improved in comparison to planar diodes by up to two orders of magnitude by optimization of the silicon structuring process. We show that the improvement in photocurrent is not due to the increase in surface area or light trapping.

  6. Nanostructured copper/porous silicon hybrid systems as efficient sound-emitting devices.

    OpenAIRE

    Recio-Sánchez, Gonzalo; Namura, Kyoko; Suzuki, Motofumi; Martín-Palma, Raúl J.

    2014-01-01

    In the present work, the photo-acoustic emission from nanostructured copper/porous silicon hybrid systems was studied. Copper nanoparticles were grown by photo-assisted electroless deposition on crystalline silicon and nanostructured porous silicon (nanoPS). Both the optical and photo-acoustic responses from these systems were determined. The experimental results show a remarkable increase in the photo-acoustic intensity when copper nanoparticles are incorporated to the porous structure. The ...

  7. Strong Optomechanical Interaction in Hybrid Plasmonic-Photonic Crystal Nanocavities with Surface Acoustic Waves.

    Science.gov (United States)

    Lin, Tzy-Rong; Lin, Chiang-Hsin; Hsu, Jin-Chen

    2015-09-08

    We propose dynamic modulation of a hybrid plasmonic-photonic crystal nanocavity using monochromatic coherent acoustic phonons formed by ultrahigh-frequency surface acoustic waves (SAWs) to achieve strong optomechanical interaction. The crystal nanocavity used in this study consisted of a defective photonic crystal beam coupled to a metal surface with a nanoscale air gap in between and provided hybridization of a highly confined plasmonic-photonic mode with a high quality factor and deep subwavelength mode volume. Efficient photon-phonon interaction occurs in the air gap through the SAW perturbation of the metal surface, strongly coupling the optical and acoustic frequencies. As a result, a large modulation bandwidth and optical resonance wavelength shift for the crystal nanocavity are demonstrated at telecommunication wavelengths. The proposed SAW-based modulation within the hybrid plasmonic-photonic crystal nanocavities beyond the diffraction limit provides opportunities for various applications in enhanced sound-light interaction and fast coherent acoustic control of optomechanical devices.

  8. Intermodal parametric gain of degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    OpenAIRE

    Petersen, Sidsel Rübner; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard

    2013-01-01

    Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process.

  9. Frequency conversion through spontaneous degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Olausson, Christina Bjarnal Thulin;

    2014-01-01

    Frequency conversion through spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers. Different FWM processes are observed, phasematching between fiber modes of orthogonal polarization, intermodal phasematching across bandgaps, and intramodal...

  10. Ultrahigh Q whispering gallery mode electro-optic resonators on a silicon photonic chip.

    Science.gov (United States)

    Soltani, Mohammad; Ilchenko, Vladimir; Matsko, Andrey; Savchenkov, Anatoliy; Schlafer, John; Ryan, Colm; Maleki, Lute

    2016-09-15

    Crystalline whispering gallery mode (WGM) electro-optic resonators made of LiNbO3 and LiTaO3 are critical for a wide range of applications in nonlinear and quantum optics, as well as RF photonics, due to their remarkably ultrahigh Q(>108) and large electro-optic coefficient. Achieving efficient coupling of these resonators to planar on-chip optical waveguides is essential for any high-yield and robust practical applications. However, it has been very challenging to demonstrate such coupling while preserving the ultrahigh Q properties of the resonators. Here, we show how the silicon photonic platform can overcome this long-standing challenge. Silicon waveguides with appropriate designs enable efficient and strong coupling to these WGM electro-optic resonators. We discuss various integration architectures of these resonators onto a silicon chip and experimentally demonstrate critical coupling of a planar Si waveguide and an ultrahigh QLiTaO3 resonator (Q∼108). Our results show a promising path for widespread and practical applications of these resonators on a silicon photonic platform.

  11. High-efficiency and low-jitter Silicon single-photon avalanche diodes based on nanophotonic absorption enhancement

    CERN Document Server

    Ma, Jian; Yu, Zongfu; Jiang, Xiao; Huo, Yijie; Zang, Kai; Zhang, Jun; Harris, James S; Jin, Ge; Zhang, Qiang; Pan, Jian-Wei

    2015-01-01

    Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device fabrication for current silicon SPADs, the key parameters of detection befficiency and timing jitter are often forced to compromise. Here, we propose a nanostructured silicon SPAD, which achieves high detection efficiency with excellent timing jitter simultaneously over a broad spectral range. The optical and electric simulations show significant performance enhancement compared with conventional silicon SPAD devices. This nanostructured devices can be easily fabricated and thus well suited for practical applications.

  12. Improving the organic/Si heterojunction hybrid solar cell property by optimizing PEDOT:PSS film and with amorphous silicon as back surface field

    Science.gov (United States)

    Wen, Hongbin; Cai, Hongkun; Du, Yangyang; Dai, Xiaowan; Sun, Yun; Ni, Jian; Li, Juan; Zhang, Dexian; Zhang, Jianjun

    2017-01-01

    Organic/Si hybrid heterojunction hybrid solar cells have got a great progress. The hybrid device may be promising in terms of reducing cost due to its simple technological process. It is crucial for high efficiency solar cells to form better coating films on the Si substrate. Here, the performance of organic/Si heterojunction hybrid solar cells is obviously enhanced by adding surfactant (FS300) into poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) film and the device with amorphous silicon as back surface field is successfully fabricated. The proper amount of surfactant addition improves the uniformity and homogeneous of the polymer film that can be reflected by scanning electron microscope and atomic force microscope, which allows good contact on the texture-Si substrate resulting in excellent device property. Also, the power conversion efficiency of cells is boosted to 9.37 from 7.31% displayed a 28% enhancement by embedding amorphous silicon thin film layer at rear interface as holes blocking layer. The insertion layer of amorphous silicon enhances the extraction of photon-generated carrier and suppresses the recombination of hole-electron at the rear cathode. Which results all improvement in the short-circuit current density, the open-circuit voltage and the fill factor. By optimizing the polymer film property and inserting the hole blocking layer, the performance of hybrid Si/organic hybrid solar cells is greatly improved.

  13. Adaptive gain, equalization, and wavelength stabilization techniques for silicon photonic microring resonator-based optical receivers

    Science.gov (United States)

    Palermo, Samuel; Chiang, Patrick; Yu, Kunzhi; Bai, Rui; Li, Cheng; Chen, Chin-Hui; Fiorentino, Marco; Beausoleil, Ray; Li, Hao; Shafik, Ayman; Titriku, Alex

    2016-03-01

    Interconnect architectures based on high-Q silicon photonic microring resonator devices offer a promising solution to address the dramatic increase in datacenter I/O bandwidth demands due to their ability to realize wavelength-division multiplexing (WDM) in a compact and energy efficient manner. However, challenges exist in realizing efficient receivers for these systems due to varying per-channel link budgets, sensitivity requirements, and ring resonance wavelength shifts. This paper reports on adaptive optical receiver design techniques which address these issues and have been demonstrated in two hybrid-integrated prototypes based on microring drop filters and waveguide photodetectors implemented in a 130nm SOI process and high-speed optical front-ends designed in 65nm CMOS. A 10Gb/s powerscalable architecture employs supply voltage scaling of a three inverter-stage transimpedance amplifier (TIA) that is adapted with an eye-monitor control loop to yield the necessary sensitivity for a given channel. As reduction of TIA input-referred noise is more critical at higher data rates, a 25Gb/s design utilizes a large input-stage feedback resistor TIA cascaded with a continuous-time linear equalizer (CTLE) that compensates for the increased input pole. When tested with a waveguide Ge PD with 0.45A/W responsivity, this topology achieves 25Gb/s operation with -8.2dBm sensitivity at a BER=10-12. In order to address microring drop filters sensitivity to fabrication tolerances and thermal variations, efficient wavelength-stabilization control loops are necessary. A peak-power-based monitoring loop which locks the drop filter to the input wavelength, while achieving compatibility with the high-speed TIA offset-correction feedback loop is implemented with a 0.7nm tuning range at 43μW/GHz efficiency.

  14. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    Science.gov (United States)

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld; Cai, Xinlun; Zhou, Xiaoqi; Rottwitt, Karsten; Oxenløwe, Leif Katsuo

    2017-06-01

    Quantum key distribution provides an efficient means to exchange information in an unconditionally secure way. Historically, quantum key distribution protocols have been based on binary signal formats, such as two polarization states, and the transmitted information efficiency of the quantum key is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually unbiased bases in a four-dimensional Hilbert space, and achieved low and stable quantum bit error rate well below both the coherent attack and individual attack limits. Compared to previous demonstrations, the use of a multicore fiber in our protocol provides a much more efficient way to create high-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling manipulating high-dimensional quantum states in a compact and stable manner. Our demonstration paves the way to utilize state-of-the-art multicore fibers for noise tolerance high-dimensional quantum key distribution, and boost silicon photonics for high information efficiency quantum communications.

  15. Intermodal parametric gain of degenerate four wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard

    2013-01-01

    Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process.......Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process....

  16. Polarization switch of four-wave mixing in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Olausson, Christina Bjarnal Thulin;

    2015-01-01

    Degenerate spontaneous four-wave mixing is considered in a large mode area hybrid photonic crystal fiber. Numerical and experimental results show birefringence assisted four-wave mixing for a certain polarization state of the pump field. The parametric gain can be turned on and off by switching...... the polarization state of the pump field between the two principal axis of the hybrid photonic crystal fiber. (C) 2015 Optical Society of America...

  17. Polarization switch of four-wave mixing in large mode area hybrid photonic crystal fibers.

    Science.gov (United States)

    Petersen, Sidsel R; Alkeskjold, Thomas T; Olausson, Christina B; Lægsgaard, Jesper

    2015-02-15

    Degenerate spontaneous four-wave mixing is considered in a large mode area hybrid photonic crystal fiber. Numerical and experimental results show birefringence assisted four-wave mixing for a certain polarization state of the pump field. The parametric gain can be turned on and off by switching the polarization state of the pump field between the two principal axis of the hybrid photonic crystal fiber.

  18. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  19. Bright and stable visible-spectrum single photon emitter in silicon carbide

    CERN Document Server

    Lienhard, Benjamin; Mouradian, Sara; Dolde, Florian; Tran, Toan Trong; Aharonovich, Igor; Englund, Dirk R

    2016-01-01

    Single photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest to realize scalable solid state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single photon emitter in 4H-silicon carbide (SiC). The emitter is photostable at room- and low-temperature enabling photon counts per second (cps) in excess of 2$\\times$10$^6$ from unpatterned, bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low temperature measurements reveal a narrow zero phonon line (linewidth $30~$% of the total photoluminescence spectrum.

  20. Experimental realization of Bloch oscillations in a parity-time synthetic silicon photonic lattice.

    Science.gov (United States)

    Xu, Ye-Long; Fegadolli, William S; Gan, Lin; Lu, Ming-Hui; Liu, Xiao-Ping; Li, Zhi-Yuan; Scherer, Axel; Chen, Yan-Feng

    2016-04-20

    As an important electron transportation phenomenon, Bloch oscillations have been extensively studied in condensed matter. Due to the similarity in wave properties between electrons and other quantum particles, Bloch oscillations have been observed in atom lattices, photonic lattices, and so on. One of the many distinct advantages for choosing these systems over the regular electronic systems is the versatility in engineering artificial potentials. Here by utilizing dissipative elements in a CMOS-compatible photonic platform to create a periodic complex potential and by exploiting the emerging concept of parity-time synthetic photonics, we experimentally realize spatial Bloch oscillations in a non-Hermitian photonic system on a chip level. Our demonstration may have significant impact in the field of quantum simulation by following the recent trend of moving complicated table-top quantum optics experiments onto the fully integrated CMOS-compatible silicon platform.

  1. An all-optical spatial light modulator for field-programmable silicon photonic circuits

    CERN Document Server

    Bruck, Roman; Lalanne, Philippe; Mills, Ben; Thomson, David J; Mashanovich, Goran Z; Reed, Graham T; Muskens, Otto L

    2016-01-01

    Reconfigurable photonic devices capable of routing the flow of light enable flexible integrated-optic circuits that are not hard-wired but can be externally controlled. Analogous to free-space spatial light modulators, we demonstrate all-optical wavefront shaping in integrated silicon-on-insulator photonic devices by modifying the spatial refractive index profile of the device employing ultraviolet pulsed laser excitation. Applying appropriate excitation patterns grants us full control over the optical transfer function of telecommunication-wavelength light travelling through the device, thus allowing us to redefine its functionalities. As a proof-of-concept, we experimentally demonstrate routing of light between the ports of a multimode interference power splitter with more than 97% total efficiency and negligible losses. Wavefront shaping in integrated photonic circuits provides a conceptually new approach toward achieving highly adaptable and field-programmable photonic circuits with applications in optica...

  2. Experimental realization of Bloch oscillations in a parity-time synthetic silicon photonic lattice

    Science.gov (United States)

    Xu, Ye-Long; Fegadolli, William S.; Gan, Lin; Lu, Ming-Hui; Liu, Xiao-Ping; Li, Zhi-Yuan; Scherer, Axel; Chen, Yan-Feng

    2016-04-01

    As an important electron transportation phenomenon, Bloch oscillations have been extensively studied in condensed matter. Due to the similarity in wave properties between electrons and other quantum particles, Bloch oscillations have been observed in atom lattices, photonic lattices, and so on. One of the many distinct advantages for choosing these systems over the regular electronic systems is the versatility in engineering artificial potentials. Here by utilizing dissipative elements in a CMOS-compatible photonic platform to create a periodic complex potential and by exploiting the emerging concept of parity-time synthetic photonics, we experimentally realize spatial Bloch oscillations in a non-Hermitian photonic system on a chip level. Our demonstration may have significant impact in the field of quantum simulation by following the recent trend of moving complicated table-top quantum optics experiments onto the fully integrated CMOS-compatible silicon platform.

  3. Integration of 2D materials on a silicon photonics platform for optoelectronics applications

    Science.gov (United States)

    Youngblood, Nathan; Li, Mo

    2016-12-01

    Owing to enormous growth in both data storage and the demand for high-performance computing, there has been a major effort to integrate telecom networks on-chip. Silicon photonics is an ideal candidate, thanks to the maturity and economics of current CMOS processes in addition to the desirable optical properties of silicon in the near IR. The basics of optical communication require the ability to generate, modulate, and detect light, which is not currently possible with silicon alone. Growing germanium or III/V materials on silicon is technically challenging due to the mismatch between lattice constants and thermal properties. One proposed solution is to use two-dimensional materials, which have covalent bonds in-plane, but are held together by van der Waals forces out of plane. These materials have many unique electrical and optical properties and can be transferred to an arbitrary substrate without lattice matching requirements. This article reviews recent progress toward the integration of 2D materials on a silicon photonics platform for optoelectronic applications.

  4. Ultra-low-power silicon photonics wavelength converter for phase-encoded telecommunication signals

    Science.gov (United States)

    Lacava, C.; Ettabib, M. A.; Cristiani, I.; Fedeli, J.-M.; Richardson, D. J.; Petropoulos, P.

    2016-03-01

    The development of compact, low power, silicon photonics CMOS compatible components for all-optical signal processing represents a key step towards the development of fully functional platforms for next generation all-optical communication networks. The wavelength conversion functionality at key nodes is highly desirable to achieve transparent interoperability and wavelength routing allowing efficient management of network resources operated with high speed, phase encoded signals. All optical wavelength conversion has already been demonstrated in Si-based devices, mainly utilizing the strong Kerr effect that silicon exhibits at telecommunication wavelengths. Unfortunately, Two Photon Absorption (TPA) and Free Carrier (FC) effects strongly limit their performance, even at moderate power levels, making them unsuitable for practical nonlinear applications. Amorphous silicon has recently emerged as a viable alternative to crystalline silicon (c-Si), showing both an enhanced Kerr as well as a reduced TPA coefficient at telecom wavelengths, with respect to its c-Si counterpart. Here we present an ultra-low power wavelength converter based on a passive, CMOS compatible, 1-mm long amorphous silicon waveguide operated at a maximum pump power level of only 70 mW. We demonstrate TPA-free Four Wave Mixing (FWM)-based wavelength conversion of Binary Phase Shift Keyed (BPSK) and Quadrature Phase Shift Keyed (QPSK) signals at 20 Gbit/s with <1 dB power penalty at BER = 10-5.

  5. 193nm immersion lithography for high-performance silicon photonic circuits

    Science.gov (United States)

    Selvaraja, Shankar K.; Winroth, Gustaf; Locorotondo, Sabrina; Murdoch, Gayle; Milenin, Alexey; Delvaux, Christie; Ong, Patrick; Pathak, Shibnath; Xie, Weiqiang; Sterckx, Gunther; Lepage, Guy; Van Thourhout, Dries; Bogaerts, Wim; Van Campenhout, Joris; Absil, Philippe

    2014-04-01

    Large-scale photonics integration has been proposed for many years to support the ever increasing requirements for long and short distance communications as well as package-to-package interconnects. Amongst the various technology options, silicon photonics has imposed itself as a promising candidate, relying on CMOS fabrication processes. While silicon photonics can share the technology platform developed for advanced CMOS devices it has specific dimension control requirements. Though the device dimensions are in the order of the wavelength of light used, the tolerance allowed can be less than 1% for certain devices. Achieving this is a challenging task which requires advanced patterning techniques along with process control. Another challenge is identifying an overlapping process window for diverse pattern densities and orientations on a single layer. In this paper, we present key technology challenges faced when using optical lithography for silicon photonics and advantages of using the 193nm immersion lithography system. We report successful demonstration of a modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology. By careful process design, within-wafer CD variation (1sigma) of 20 % from the best propagation loss reported for this cross-section fabricated using e-beam lithography. By using a single-mode low-confinement waveguide geometry the loss is further reduced to ~0.12 dB/cm. Secondly, we present improvement in within-device phase error in wavelength selective devices, a critical parameter which is a direct measure of line-width uniformity improvement due to the 193nm immersion system. In addition to these superior device performances, the platform opens scenarios for designing new device concepts using sub-wavelength features. By taking advantage of this, we demonstrate a cost-effective robust single-etch sub-wavelength structure based fiber-chip coupler with a coupling efficiency of 40 % and high

  6. Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

    CERN Document Server

    Savanier, Marc

    2016-01-01

    Generation of photon pairs from compact, manufacturable and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity (JSI), which describes the frequency correlations of the photon pair. In particular, heralded single-photon generation requires uncorrelated photons, rather than the highly anti-correlated photons conventionally obtained under continuous-wave (CW) pumping. Recent attempts to achieve such a factorizable JSI have used short optical pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared to the Si microchip pair generator, dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from a Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a CW optical diode ...

  7. Radiation-hard silicon photonics for high energy physics and beyond

    CERN Document Server

    CERN. Geneva

    2016-01-01

    Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

  8. Outdoor W-Band Hybrid Photonic Wireless Link Based on an Optical SFP+ Module

    DEFF Research Database (Denmark)

    Rommel, Simon; Rodríguez Páez, Juan Sebastián; Chorchos, Łukasz

    2016-01-01

    This letter proposes aW-band hybrid photonic wireless link based on a commercial SFP+ module and experimentally demonstrates its performance. Using a free running laser as local oscillator and heterodyne photonic upconversion, good frequency stability is achieved. Outdoor wireless transmission ov...

  9. Silicon photonic sensors incorporated in a digital microfluidic system.

    Science.gov (United States)

    Lerma Arce, Cristina; Witters, Daan; Puers, Robert; Lammertyn, Jeroen; Bienstman, Peter

    2012-12-01

    Label-free biosensing with silicon nanophotonic microring resonator sensors has proven to be an excellent sensing technique for achieving high-throughput and high sensitivity, comparing favorably with other labeled and label-free sensing techniques. However, as in any biosensing platform, silicon nanophotonic microring resonator sensors require a fluidic component which allows the continuous delivery of the sample to the sensor surface. This component is typically based on microchannels in polydimethylsiloxane or other materials, which add cost and complexity to the system. The use of microdroplets in a digital microfluidic system, instead of continuous flows, is one of the recent trends in the field, where microliter- to picoliter-sized droplets are generated, transported, mixed, and split, thereby creating miniaturized reaction chambers which can be controlled individually in time and space. This avoids cross talk between samples or reagents and allows fluid plugs to be manipulated on reconfigurable paths, which cannot be achieved using the more established and more complex technology of microfluidic channels where droplets are controlled in series. It has great potential for high-throughput liquid handling, while avoiding on-chip cross-contamination. We present the integration of two miniaturized technologies: label-free silicon nanophotonic microring resonator sensors and digital microfluidics, providing an alternative to the typical microfluidic system based on microchannels. The performance of this combined system is demonstrated by performing proof-of-principle measurements of glucose, sodium chloride, and ethanol concentrations. These results show that multiplexed real-time detection and analysis, great flexibility, and portability make the combination of these technologies an ideal platform for easy and fast use in any laboratory.

  10. Nanostructured copper/porous silicon hybrid systems as efficient sound-emitting devices.

    Science.gov (United States)

    Recio-Sánchez, Gonzalo; Namura, Kyoko; Suzuki, Motofumi; Martín-Palma, Raúl J

    2014-01-01

    In the present work, the photo-acoustic emission from nanostructured copper/porous silicon hybrid systems was studied. Copper nanoparticles were grown by photo-assisted electroless deposition on crystalline silicon and nanostructured porous silicon (nanoPS). Both the optical and photo-acoustic responses from these systems were determined. The experimental results show a remarkable increase in the photo-acoustic intensity when copper nanoparticles are incorporated to the porous structure. The results thus suggest that the Cu/nanoPS hybrid systems are suitable candidates for several applications in the field of thermoplasmonics, including the development of sound-emitting devices of great efficiency.

  11. A micrometer-scale integrated silicon source of time-energy entangled photons

    CERN Document Server

    Grassani, Davide; Liscidini, Marco; Galli, Matteo; Strain, Michael J; Sorel, Marc; Sipe, J E; Bajoni, Daniele

    2014-01-01

    Entanglement is a fundamental resource in quantum information processing. Several studies have explored the integration of sources of entangled states on a silicon chip but the sources demonstrated so far require millimeter lengths and pump powers of the order of hundreds of mWs to produce an appreciable photon flux, hindering their scalability and dense integration. Microring resonators have been shown to be efficient sources of photon pairs, but entangled state emission has never been demonstrated. Here we report the first demonstration of a microring resonator capable of emitting time-energy entangled photons. We use a Franson experiment to show a violation of Bell's inequality by as much as 11 standard deviations. The source is integrated on a silicon chip, operates at sub-mW pump power, emits in the telecom band with a pair generation rate exceeding 10$^7$ Hz per $nm$, and outputs into a photonic waveguide. These are all essential features of an entangled states emitter for a quantum photonic networks.

  12. Photon-Enhanced Thermionic Emission in Cesiated p-Type and n-Type Silicon

    DEFF Research Database (Denmark)

    Reck, Kasper; Dionigi, Fabio; Hansen, Ole

    2014-01-01

    electrons. Efficiencies above 60% have been predicted theoretically for high solar concentration systems. Silicon is an interesting absorber material for high efficiency PETE solar cells, partly due to its mechanical and thermal properties and partly due to its electrical properties, including a close......Photon-enhanced thermionic emission (PETE) is a relatively new concept for high efficiency solar cells that utilize not only the energy of electrons excited across the band gap by photons, as in conventional photovoltaic solar cells, but also the energy usual lost to thermalization of the excited...

  13. Enhancement of photoluminescence and raman scattering in one-dimensional photonic crystals based on porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gonchar, K. A., E-mail: k.a.gonchar@gmail.com [Moscow State University, Physics Faculty (Russian Federation); Musabek, G. K.; Taurbayev, T. I. [Al Farabi Kazakh National University, Physics Department (Kazakhstan); Timoshenko, V. Yu. [Moscow State University, Physics Faculty (Russian Federation)

    2011-05-15

    In porous-silicon-based multilayered structures that exhibit the properties of one-dimensional photonic crystals, an increase in the photoluminescence and Raman scattering intensities is observed upon optical excitation at the wavelength 1.064 {mu}m. When the excitation wavelength falls within the edge of the photonic band gap of the structures, a multiple increase (by a factor larger than 400) in the efficiency of Raman scattering is detected. The effect is attributed to partial localization of excitation light and, correspondingly, to the much longer time of interaction of light with the material in the structures.

  14. Toward automated parasitic extraction of silicon photonics using layout physical verifications

    Science.gov (United States)

    Ismail, Mohamed; El Shamy, Raghi S.; Madkour, Kareem; Hammouda, Sherif; Swillam, Mohamed A.

    2016-08-01

    A physical verification flow of the layout of silicon photonic circuits is suggested. Simple empirical models are developed to estimate the bend power loss and coupled power in photonic integrated circuits fabricated using SOI standard wafers. These models are utilized in physical verification flow of the circuit layout to verify reliable fabrication using any electronic design automation tool. The models are accurate compared with electromagnetic solvers. The models are closed form and circumvent the need to utilize any EM solver for the verification process. Hence, it dramatically reduces the time of the verification process.

  15. Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs.

    Science.gov (United States)

    Jannesari, R; Schatzl, M; Hackl, F; Glaser, M; Hingerl, K; Fromherz, T; Schäffler, F

    2014-10-20

    We report on the fabrication and characterization of silicon-on-insulator (SOI) photonic crystal slabs (PCS) with commensurately embedded germanium quantum dot (QD) emitters for near-infrared light emission. Substrate pre-patterning defines preferential nucleation sites for the self-assembly of Ge QDs during epitaxial growth. Aligned two-dimensional photonic crystal slabs are then etched into the SOI layer. QD ordering enhances the photoluminescence output as compared to PCSs with randomly embedded QDs. Rigorously coupled wave analysis shows that coupling of the QD emitters to leaky modes of the PCS can be tuned via their location within the unit cell of the PCS.

  16. Silicon technology compatible photonic molecules for compact optical signal processing

    Energy Technology Data Exchange (ETDEWEB)

    Barea, Luis A. M., E-mail: barea@ifi.unicamp.br; Vallini, Felipe; Jarschel, Paulo F.; Frateschi, Newton C. [Device Research Laboratory, Applied Physics Department, “GlebWataghin” Physics Institute, University of Campinas–UNICAMP, 13083-859 Campinas, SP (Brazil)

    2013-11-11

    Photonic molecules (PMs) based on multiple inner coupled microring resonators allow to surpass the fundamental constraint between the total quality factor (Q{sub T}), free spectral range (FSR), and resonator size. In this work, we use a PM that presents doublets and triplets resonance splitting, all with high Q{sub T}. We demonstrate the use of the doublet splitting for 34.2 GHz signal extraction by filtering the sidebands of a modulated optical signal. We also demonstrate that very compact optical modulators operating 2.75 times beyond its resonator linewidth limit may be obtained using the PM triplet splitting, with separation of ∼55 GHz.

  17. Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon.

    Science.gov (United States)

    Zhao, Deyin; Liu, Shihchia; Yang, Hongjun; Ma, Zhenqiang; Reuterskiöld-Hedlund, Carl; Hammar, Mattias; Zhou, Weidong

    2016-01-04

    We report here an optically pumped hybrid III-V/Si photoic crystal surface emitting laser (PCSEL), consisting of a heterogeneously integrated III-V InGaAsP quantum well heterostructure gain medium, printed on a patterned defect-free Si photonic crystal (PC) bandedge cavity. Single mode lasing was achieved for a large area laser, with a side-mode suppression ratio of 28 dB, for lasing operation temperature ~ 200 K. Two types of lasers were demonstrated operating at different temperatures. Detailed modal analysis reveals the lasing mode matches with the estimated lasing gain threshold conditions. Our demonstration promises a hybrid laser sources on Si towards three-dimensional (3D) integrated Si photonics for on-chip wavelength-division multiplex (3D WDM) systems for a wide range of volume photonic/electronic applications in computing, communication, sensing, imaging, etc.

  18. A highly scalable fully non-blocking silicon photonic switch fabric

    CERN Document Server

    Nikolova, Dessislava; Liu, Yang; Rumley, Sebastien; Novack, Ari; Baehr-Jones, Tom; Hochberg, Michael; Bergman, Keren

    2016-01-01

    Large port count spatial optical switches will facilitate flexible and energy efficient data movement in future data communications systems, especially if they are capable of nanosecond-order reconfiguration times. In this work, we demonstrate an 8x8 microring-based silicon photonic switch with software controlled switching. The proposed switch architecture is modular as it assembles multiple identical components with multiplexing/demultiplexing functionalities. The switch is fully non-blocking, has path independent insertion loss, low crosstalk and is straightforward to control. A scalability analysis shows that this architecture can scale to very large port counts. This work represents the first demonstration of real-time firmware controlled switching with silicon photonics devices integrated at the chip scale.

  19. A scalable silicon photonic chip-scale optical switch for high performance computing systems.

    Science.gov (United States)

    Yu, Runxiang; Cheung, Stanley; Li, Yuliang; Okamoto, Katsunari; Proietti, Roberto; Yin, Yawei; Yoo, S J B

    2013-12-30

    This paper discusses the architecture and provides performance studies of a silicon photonic chip-scale optical switch for scalable interconnect network in high performance computing systems. The proposed switch exploits optical wavelength parallelism and wavelength routing characteristics of an Arrayed Waveguide Grating Router (AWGR) to allow contention resolution in the wavelength domain. Simulation results from a cycle-accurate network simulator indicate that, even with only two transmitter/receiver pairs per node, the switch exhibits lower end-to-end latency and higher throughput at high (>90%) input loads compared with electronic switches. On the device integration level, we propose to integrate all the components (ring modulators, photodetectors and AWGR) on a CMOS-compatible silicon photonic platform to ensure a compact, energy efficient and cost-effective device. We successfully demonstrate proof-of-concept routing functions on an 8 × 8 prototype fabricated using foundry services provided by OpSIS-IME.

  20. Photon pair generation from compact silicon microring resonators using microwatt-level pump powers

    CERN Document Server

    Savanier, Marc; Mookherjea, Shayan

    2015-01-01

    Microring resonators made from silicon, using deep ultraviolet lithography fabrication processes which are scalable and cost-effective, are becoming a popular microscale device format for generating photon pairs at telecommunications wavelengths at room temperature. In compact devices with a footprint less than $5\\times 10^{-4}$ mm$^2$, we demonstrate pair generation using only a few microwatts of average pump power. We discuss the role played by important parameters such as the loss, group-velocity dispersion and the ring-waveguide coupling coefficient in finding the optimum operating point for silicon microring pair generation. Such small devices and low pump power requirements could be beneficial for future scaled-up architectures with many pair-generation devices on the same chip, which will be required to create quasi-deterministic pure single photon sources from inherently statistical processes such as spontaneous four-wave mixing.

  1. Observation of four-wave mixing in slow-light silicon photonic crystal waveguides.

    Science.gov (United States)

    McMillan, James F; Yu, Mingbin; Kwong, Dim-Lee; Wong, Chee Wei

    2010-07-19

    Four-wave mixing is observed in a silicon W1 photonic crystal waveguide. The dispersion dependence of the idler conversion efficiency is measured and shown to be enhanced at wavelengths exhibiting slow group velocities. A 12-dB increase in the conversion efficiency is observed. Concurrently, a decrease in the conversion bandwidth is observed due to the increase in group velocity dispersion in the slow-light regime. The experimentally observed conversion efficiencies agree with the numerically modeled results.

  2. Observations of four-wave mixing in slow-light silicon photonic crystal waveguides

    CERN Document Server

    McMillan, James F; Kwong, Dim-Lee; Wong, Chee Wei

    2010-01-01

    Four-wave mixing is observed in a silicon W1 photonic crystal waveguide. The dispersion dependence of the idler conversion efficiency is measured and shown to be enhanced at wavelengths exhibiting slow group velocities. A 12-dB increase in the conversion efficiency is observed. Concurrently, a decrease in the conversion bandwidth is observed due to the increase in group velocity dispersion in the slow-light regime. The experimentally observed conversion efficiencies agree with the numerically modeled results.

  3. Topology optimized mode multiplexing in silicon-on-insulator photonic wire waveguides

    DEFF Research Database (Denmark)

    Frellsen, Louise Floor; Ding, Yunhong; Sigmund, Ole;

    2016-01-01

    We design and experimentally verify a topology optimized low-loss and broadband two-mode (de-)multiplexer, which is (de-)multiplexing the fundamental and the first-order transverse-electric modes in a silicon photonic wire. The device has a footprint of 2.6 μm x 4.22 μm and exhibits a loss 14 dB ...

  4. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  5. Focused Ion Beam Milling Strategies of Photonic Crystal Structures in Silicon

    OpenAIRE

    Hopman, Wico C.L.; Ay, Feridun; Hu, Wenbin; Gadgil, Vishwas J.; Kuipers, Laurens; Pollnau, Markus; Ridder, De, Dirk

    2007-01-01

    We report on optimisation of the side wall angle of focused ion beam (FIB) fabricated submicron diameter holes in silicon. Two optimisation steps were performed. First, we compare two different FIB scanning procedures and show the advantages of using a spiral scanning method for the definition of holes in photonic crystal slab structures. Secondly, we investigate the effect on the geometry, of parameters for reducing the tapering effect. Furthermore, we report on the initial results regarding...

  6. Silicon photonics for 100 Gbit/s intra-data center optical interconnects

    Science.gov (United States)

    Meister, Stefan; Grehn, Moritz; Rhee, Hanjo; Vitali, Marco; Theiss, Christoph; Kupijai, Sebastian; Al-Saadi, Aws; Bronzi, Danilo; Otte, Sven; Henniges, Marvin; Selicke, David; Atif, Muhammad; Schwartz, Erik; Lischke, Stefan; Stolarek, David; Mai, Andreas; Kaynak, Mehmet; Richter, Harald H.; Zimmermann, Lars

    2016-03-01

    We report on an ultra-compact co-integrated transmitter and receiver in SiGe BiCMOS technology for short reach optical interconnects. A fully integrated EPIC transceiver chip on silicon photonics technology is described. The chip integrates all photonic and electronic devices for an electro-optic transceiver and has been designed to be testable on wafer-scale. A node-matched diode modulator based on carrier injection is a key building block in the chip design. Its operation performance is presented with respect to insertion loss, signal-to-noise-ratio and power consumption at a 25.78125 Gbit/s in NRZ operation. A novel SiGe based photodetector exhibits a -3 dB bandwidth of up to 70 GHz and a responsivity of >1 A/W. Details are given about the process technology of co-integration of photonic and electronic integrated circuits using both silicon-on-insulator and bulk silicon. The implemented co-integration process requires only few additional process steps, leading to only a slight increase in complexity compared to conventional CMOS and BiCMOS baselines.

  7. A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

    CERN Document Server

    Xiong, Chi; Proesel, Jonathan E; Orcutt, Jason S; Haensch, Wilfried; Green, William M J

    2016-01-01

    Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a unique advantage because it does not require extra lasers or a costly overhaul of optical fiber cablings within the existing infrastructure. Here, we demonstrate the first fully monolithically integrated silicon photonic four-level PAM (PAM-4) transmitter operating at 56 Gb/s and demonstrate error-free transmission (bit-error-rate < 10$^{-12}$) up to 50 Gb/s without forward error correction. The superior PAM-4 waveform is enabled by optimizatio...

  8. Detection efficiency calibration of single-photon silicon avalanche photodiodes traceable using double attenuator technique.

    Science.gov (United States)

    López, Marco; Hofer, Helmuth; Kück, Stefan

    2015-12-08

    A highly accurate method for the determination of the detection efficiency of a silicon single-photon avalanche diode (Si-SPAD) is presented. This method is based on the comparison of the detected count rate of the Si-SPAD compared to the photon rate determined from a calibrated silicon diode using a modified attenuator technique, in which the total attenuation is measured in two attenuation steps. Furthermore, a validation of this two-step method is performed using attenuators of higher transmittance. The setup is a tabletop one, laser-based, and fully automated. The measurement uncertainty components are determined and analyzed in detail. The obtained standard measurement uncertainty is < 0.5%. Main contributions are the transmission of the neutral density filters used as attenuators and the spectral responsivity of the calibrated analog silicon diode. Furthermore, the dependence of the detection efficiency of the Si-SPAD on the mean photon number of the impinging laser radiation with Poissonian statistics is investigated.

  9. Photonic light trapping in silicon nanowire arrays: deriving and overcoming the physical limitations

    CERN Document Server

    Schmitt, Sebastian W

    2016-01-01

    Hexagonally aligned, free-standing silicon nanowire (SiNW) arrays serve as photonic resonators which, as compared to a silicon (Si) thin film, do not only absorb more visible (VIS) and near-infrared (NIR) light, but also show an inherent photonic light concentration that enhances their performance as solar absorbers. Using numerical simulations we show, how light concentration is induced by high optical cross sections of the individual SiNWs but cannot be optimized independently of the SiNW array absorption. While an ideal spatial density exists, for which the SiNW array absorption for VIS and NIR wavelengths reaches a maximum, the spatial correlation of SiNWs in an array suppresses the formation of optical Mie modes responsible for light concentration. We show that different from SiNWs with straight sidewalls, arrays of inverted silicon nanocones (SiNCs) permit to avoid the mode suppression. In fact they give rise to an altered set of photonic modes which is induced by the spatial correlation of SiNCs in the...

  10. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

    Science.gov (United States)

    Fuchs, F.; Stender, B.; Trupke, M.; Simin, D.; Pflaum, J.; Dyakonov, V.; Astakhov, G. V.

    2015-07-01

    Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

  11. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Science.gov (United States)

    Savanier, Marc; Kumar, Ranjeet; Mookherjea, Shayan

    2015-09-01

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  12. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Energy Technology Data Exchange (ETDEWEB)

    Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2015-09-28

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  13. Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

    CERN Document Server

    Shakoor, A; Cardile, P; Portalupi, S L; Gerace, D; Welna, K; Boninelli, S; Franzo, G; Priolo, F; Krauss, T F; Galli, M; Faolain, L O

    2013-01-01

    Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow ({\\Delta}{\\lambda} = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects a...

  14. Silicon Photonics Research in Hong Kong: Microresonator Devices and Optical Nonlinearities

    Science.gov (United States)

    Poon, Andrew W.; Zhou, Linjie; Xu, Fang; Li, Chao; Chen, Hui; Liang, Tak-Keung; Liu, Yang; Tsang, Hon K.

    In this review paper we showcase recent activities on silicon photonics science and technology research in Hong Kong regarding two important topical areas-microresonator devices and optical nonlinearities. Our work on silicon microresonator filters, switches and modulators have shown promise for the nascent development of on-chip optoelectronic signal processing systems, while our studies on optical nonlinearities have contributed to basic understanding of silicon-based optically-pumped light sources and helium-implanted detectors. Here, we review our various passive and electro-optic active microresonator devices including (i) cascaded microring resonator cross-connect filters, (ii) NRZ-to-PRZ data format converters using a microring resonator notch filter, (iii) GHz-speed carrier-injection-based microring resonator modulators and 0.5-GHz-speed carrier-injection-based microdisk resonator modulators, and (iv) electrically reconfigurable microring resonator add-drop filters and electro-optic logic switches using interferometric resonance control. On the nonlinear waveguide front, we review the main nonlinear optical effects in silicon, and show that even at fairly modest average powers two-photon absorption and the accompanied free-carrier linear absorption could lead to optical limiting and a dramatic reduction in the effective lengths of nonlinear devices.

  15. Modulation of quantum dot photoluminescence in porous silicon photonic crystals as a function of the depth of their penetration

    Science.gov (United States)

    Dovzhenko, Dmitriy S.; Martynov, Igor L.; Samokhvalov, Pavel S.; Mochalov, Konstantin E.; Chistyakov, Alexander A.; Nabiev, Igor

    2016-04-01

    Photonic crystals doped with fluorescent nanoparticles offer a plenty of interesting applications in photonics, laser physics, and biosensing. Understanding of the mechanisms and effects of modulation of the photoluminescent properties of photonic crystals by varying the depth of nanoparticle penetration should promote targeted development of nanocrystal-doped photonic crystals with desired optical and morphological properties. Here, we have investigated the penetration of semiconductor quantum dots (QDs) into porous silicon photonic crystals and performed experimental analysis and theoretical modeling of the effects of the depth of nanoparticle penetration on the photoluminescent properties of this photonic system. For this purpose, we fabricated porous silicon microcavities with an eigenmode width not exceeding 10 nm at a wavelength of 620 nm. CdSe/CdS/ZnS QDs fluorescing at 617 nm with a quantum yield of about 70% and a width at half-height of about 40 nm were used in the study. Confocal microscopy and scanning electron microscopy were used to estimate the depth of penetration of QDs into the porous silicon structure; the photoluminescence spectra, kinetics, and angular fluorescence distribution were also analyzed. Enhancement of QD photoluminescence at the microcavity eigenmode wavelength was observed. Theoretical modeling of porous silicon photonic crystals doped with QDs was performed using the finite-difference time-domain (FDTD) approach. Theoretical modeling has predicted, and the experiments have confirmed, that even a very limited depth of nanoparticle penetration into photonic crystals, not exceeding the first Bragg mirror of the microcavity, leads to significant changes in the QD luminescence spectrum determined by the modulation of the local density of photonic states in the microcavity. At the same time, complete and uniform filling of a photonic crystal with nanoparticles does not enhance this effect, which is as strong as in the case of a very

  16. Polarization Beam Splitter Based on a Self-Collimation Michelson Interferometer in a Silicon Photonic Crystal

    Institute of Scientific and Technical Information of China (English)

    CHEN Xi-Yao; LIN Gui-Min; LI Jun-Jun; XU Xiao-Fu; JIANG Jun-Zhen; QIANG Ze-Xuan; QIU Yi-Shen; LI Hui

    2012-01-01

    A polarization beam splitter based on a self-collimation Michelson interferometer (SMI) in a hole-type silicon photonic crystal is proposed and numerically demonstrated.Utilizing the polarization dependence of the transmission spectra of the SMI and polarization peak matching method,the SMI can work as a polarization beam splitter (PBS) by selecting an appropriate path length difference in the structure.Based on its novel polarization beam splitting mechanics,the polarization extinction ratios (PERs) for TM and TE modes are as high as 18.4 dB and 24.3 dB,respectively.Since its dimensions are only several operating wavelengths,the PBS may have practical applications in photonic integrated circuits.%A polarization beam splitter based on a self-collimation Michelson interferometer (SMI) in a hole-type silicon photonic crystal is proposed and numerically demonstrated. Utilizing the polarization dependence of the transmission spectra of the SMI and polarization peak matching method, the SMI can work as a polarization beam splitter (PBS) by selecting an appropriate path length difference in the structure. Based on its novel polarization beam splitting mechanics, the polarization extinction ratios (PERs) for TM and TE modes are as high as 18.4 dB and 24.3 dB, respectively. Since its dimensions are only several operating wavelengths, the PBS may have practical applications in photonic integrated circuits.

  17. Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

    Institute of Scientific and Technical Information of China (English)

    CHEN San; QIAN Bo; WEI Jun-Wei; CHEN Kun-Ji; XU Jun; LI Wei; HUANG Xin-Fan

    2005-01-01

    @@ Photoluminescence (PL) from one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavities are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx :H/aSiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNz :H) thin film.By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNz:H. A linewidth of △λ = 11 nm and a quality factor of Q = 69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710 nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.

  18. Qubit entanglement between ring-resonator photon-pair sources on a silicon chip.

    Science.gov (United States)

    Silverstone, J W; Santagati, R; Bonneau, D; Strain, M J; Sorel, M; O'Brien, J L; Thompson, M G

    2015-08-06

    Entanglement--one of the most delicate phenomena in nature--is an essential resource for quantum information applications. Scalable photonic quantum devices must generate and control qubit entanglement on-chip, where quantum information is naturally encoded in photon path. Here we report a silicon photonic chip that uses resonant-enhanced photon-pair sources, spectral demultiplexers and reconfigurable optics to generate a path-entangled two-qubit state and analyse its entanglement. We show that ring-resonator-based spontaneous four-wave mixing photon-pair sources can be made highly indistinguishable and that their spectral correlations are small. We use on-chip frequency demultiplexers and reconfigurable optics to perform both quantum state tomography and the strict Bell-CHSH test, both of which confirm a high level of on-chip entanglement. This work demonstrates the integration of high-performance components that will be essential for building quantum devices and systems to harness photonic entanglement on the large scale.

  19. A view on progress of silicon single-photon avalanche diodes and quenching circuits

    Science.gov (United States)

    Cova, Sergio; Ghioni, Massimo; Zappa, Franco; Rech, Ivan; Gulinatti, Angelo

    2006-10-01

    Silicon Single-Photon Avalanche-Diodes (SPAD) are nowadays considered a solid-state alternative to Photomultiplier Tubes (PMT) in single photon counting (SPC) and time-correlated single photon-counting (TCSPC) over the visible spectral range up to 1 micron wavelength. SPADs implemented in planar epitaxial technology compatible with CMOS circuits offer the typical advantages of microelectronic devices (small size, ruggedness, low voltage and low power, etc.). Furthermore, they have inherently higher photon detection efficiency, since they do not rely on electron emission in vacuum from a photocathode as PMT, but instead on the internal photoelectric effect. However, PMTs offer much wider sensitive area, which greatly simplifies the design of optical systems; they provide position-sensitive photon detection and imaging capability; they attain remarkable performance at high counting rate and offer picosecond timing resolution with Micro-Channel Plate (MCP) models. In order to make SPADs more competitive in a broader range of SPC and TCPC applications it is necessary to face both semiconductor technology issues and circuit design issues, which will be here dealt with. Technology issues will be discussed in the context of two possible approaches: employing a standard industrial high-voltage compatible CMOS technology or developing a dedicated CMOS-compatible technology. Circuit design issues will be discussed taking into account problems arising from conflicting requirements set by various required features, such as fast and efficient avalanche quenching and reset, high resolution photon timing, etc.

  20. Structure Dependence of Mode Edges in Photonic Crystal Waveguide with Silicon on Insulator

    Institute of Scientific and Technical Information of China (English)

    TANG Hai-Xia; ZUO Yu-Hua; YU Jin-Zhong; WANG Qi-Ming

    2006-01-01

    @@ The mode edges of photonic crystal waveguide with triangular lattice based on a silicon-on-insulator slab are investigated by combination of the effective index method and the two-dimensional plane wave expansion method.The variations of waveguide-mode edges with the structure parameters of photonic crystal are deduced. When the ratio of the radius of air holes to the lattice constant, r/Λ, is fixed and the lattice constant of photonic crystal,Λ, increases, the waveguide-mode edges shift to longer wavelengths. When Λ is fixed and r/Λ increases, the waveguide-mode edges shift to shorter wavelengths. Additionally, when r/Λ and Λ are both fixed, the radius of the two-row air holes adjacent to the waveguide increases, the waveguide-mode edges shift to shorter wavelengths.

  1. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

    2016-06-21

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  2. Bi-photon spectral correlation measurements from a silicon nanowire in the quantum and classical regimes

    CERN Document Server

    Jizan, Iman; Xiong, Chunle; Collins, Matthew J; Choi, Duk-Yong; Chae, Chang Joon; Liscidini, Marco; Steel, M J; Eggleton, Benjamin J; Clark, Alex S

    2014-01-01

    The growing requirement for photon pairs with specific spectral correlations in quantum optics experiments has created a demand for fast, high resolution and accurate source characterization. A promising tool for such characterization uses the classical stimulated process, in which an additional seed laser stimulates photon generation yielding much higher count rates, as recently demonstrated for a $\\chi^{(2)}$ integrated source in A.~Eckstein \\emph{et al.}, Laser Photon. Rev. \\textbf{8}, L76 (2014). In this work we extend these results to $\\chi^{(3)}$ sources, demonstrating spectral correlation measurements via stimulated four-wave mixing for the first time in a integrated optical waveguide, namely a silicon nanowire. We directly confirm the speed-up due to higher count rates and demonstrate that additional resolution can be gained when compared to traditional coincidence measurements. As pump pulse duration can influence the degree of spectral entanglement, all of our measurements are taken for two differen...

  3. Cavity-Enhanced Single-Photon Source Based on the Silicon-Vacancy Center in Diamond

    Science.gov (United States)

    Benedikter, Julia; Kaupp, Hanno; Hümmer, Thomas; Liang, Yuejiang; Bommer, Alexander; Becher, Christoph; Krueger, Anke; Smith, Jason M.; Hänsch, Theodor W.; Hunger, David

    2017-02-01

    Single-photon sources are an integral part of various quantum technologies, and solid-state quantum emitters at room temperature appear to be a promising implementation. We couple the fluorescence of individual silicon-vacancy centers in nanodiamonds to a tunable optical microcavity to demonstrate a single-photon source with high efficiency, increased emission rate, and improved spectral purity compared to the intrinsic emitter properties. We use a fiber-based microcavity with a mode volume as small as 3.4 λ3 and a quality factor of 1.9 ×1 04 and observe an effective Purcell factor of up to 9.2. Furthermore, we study modifications of the internal rate dynamics and propose a rate model that closely agrees with the measurements. We observe lifetime changes of up to 31%, limited by the finite quantum efficiency of the emitters studied here. With improved materials, our achieved parameters predict single-photon rates beyond 1 GHz.

  4. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Prathap Pathi

    2017-01-01

    Full Text Available Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm and is slightly lower (by ~5% at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm silicon and just 1%–2% for thicker (>100 μm cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

  5. Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities

    Science.gov (United States)

    Azzini, Stefano; Grassani, Davide; Galli, Matteo; Gerace, Dario; Patrini, Maddalena; Liscidini, Marco; Velha, Philippe; Bajoni, Daniele

    2013-07-01

    We report on four-wave mixing in coupled photonic crystal nano-cavities on a silicon-on-insulator platform. Three photonic wire cavities are side-coupled to obtain three modes equally separated in energy. The structure is designed to be self-filtering, and we show that the pump is rejected by almost two orders of magnitude. We study both the stimulated and the spontaneous four-wave mixing processes: owing to the small modal volume, we find that signal and idler photons are generated with a hundred-fold increase in efficiency as compared to silicon micro-ring resonators.

  6. Silicon Photonics for All-Optical Processing and High-Bandwidth-Density Interconnects

    Science.gov (United States)

    Ophir, Noam

    The first chapter of the thesis provides motivation for the integration of silicon photonic modules into compute systems and surveys some of the recent developments in the field. The second chapter then proceeds to detail a technical case study of silicon photonic microring-based WDM links' scalability and power efficiency for these chip I/O applications which could be developed in the intermediate future. The analysis, initiated originally for a workshop on optical and electrical board and rack level interconnects, looks into a detailed model of the optical power budget for such a link capturing both single-channel aspects as well as WDM-operation-related considerations which are unique for a microring physical characteristics. The third chapter, while continuing on the theme silicon photonic high bandwidth density links, proceeds to detail the first experimental demonstration and characterization of an on-chip spatial division multiplexing (SDM) scheme based on microrings for the multiplexing and demultiplexing functionalities. In the context of more forward looking optical network-on-chip environments, SDM-enabled WDM photonic interconnects can potentially achieve superior bandwidth densities per waveguide compared to WDM-only photonic interconnects. The microring-based implementation allows dynamic tuning of the multiplexing and demultiplexing characteristic of the system which allows operation on WDM grid as well device tuning to combat intra-channel crosstalk. The characterization focuses on the first reported power penalty measurements for on-chip silicon photonic SDM link showing minimal penalties achievable with 3 spatial modes concurrently operating on a single waveguide with 10-Gb/s data carried by each mode. The fourth, fifth, and sixth chapters shift in topic from the application of silicon photonics to communication links to the evolving use of silicon waveguides for nonlinear all-optical processing. Chapter four primarily introduces and motivates

  7. Numerical simulations for the effiency improvement of hybrid dye-microcrystalline silicon pin-solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Burdorf, Sven; Bauer, Gottfried Heinrich; Brueggemann, Rudolf [Institut fuer Physik, Carl von Ossietzky Universitaet, Oldenburg (Germany)

    2011-07-01

    Hybrid solar cells consisting of dye sensitizers incorporated in the i-layer of microcrystalline silicon pin solar cell have been proposed and even recently processed. The dye sensitizer molecules are embedded in the matrix and enhance the overall absorption of the dye-matrix system due to their high absorption coefficient in the spectral range interesting for photovoltaic applications. However, the charge transport properties of dyes are quite poor. Microcrystalline silicon on the other hand has acceptable charge transport properties, while the absorption, given a layer thickness in the micron range, is relatively poor. This contribution investigates the effiency improvement of hybrid dye-microcrystalline solar cells compared to pure microcrystalline solar cells by simulation. The results indicate that, under optimal conditions, the effiency can be improved by more than 20 % compared to a pure microcrystalline silicon cell. The thickness reduction for the hybrid system can be as large as 50 % for the same effiency.

  8. Rear interface engineering of hybrid organic-silicon nanowire solar cells via blade coating.

    Science.gov (United States)

    Lai, Yi-Chun; Chang, Yu-Fan; Tsai, Pei-Ting; Chang, Jan-kai; Tseng, Wei-Hsuan; Lin, Yi-Cheng; Hsiao, Chu-Yen; Zan, Hsiao-Wen; Wu, Chih-I; Chi, Gou-Chung; Meng, Hsin-Fei; Yu, Peichen

    2016-01-25

    In this work, we investigate blade-coated organic interlayers at the rear surface of hybrid organic-silicon photovoltaics based on two small molecules: Tris(8-hydroxyquinolinato) aluminium (Alq(3)) and 1,3-bis(2-(4-tert-butylphenyl)-1,3,4-oxadiazol-5-yl) benzene (OXD-7). In particular, soluble Alq(3) resulting in a uniform thin film with a root-mean-square roughness organic-silicon photovoltaics.

  9. A hybrid organic semiconductor/silicon photodiode for efficient ultraviolet photodetection.

    Science.gov (United States)

    Levell, J W; Giardini, M E; Samuel, I D W

    2010-02-15

    A method employing conjugated polymer thin film blends is shown to provide a simple and convenient way of greatly enhancing the ultraviolet response of silicon photodetectors. Hybrid organic semiconductor/silicon photodetectors are demonstrated using fluorene copolymers and give a quantum efficiency of 60% at 200 nm. The quantum efficiency is greater than 34% over the entire 200-620 nm range. These devices show promise for use in high sensitivity, low cost UV-visible photodetection and imaging applications.

  10. Wavelength-tunable entangled photons from silicon-integrated III–V quantum dots

    Science.gov (United States)

    Chen, Yan; Zhang, Jiaxiang; Zopf, Michael; Jung, Kyubong; Zhang, Yang; Keil, Robert; Ding, Fei; Schmidt, Oliver G.

    2016-01-01

    Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms. PMID:26813326

  11. Laser emissions from one-dimensional photonic crystal rings on silicon-dioxide

    Science.gov (United States)

    Lu, Tsan-Wen; Tsai, Wei-Chi; Wu, Tze-Yao; Lee, Po-Tsung

    2013-02-01

    In this report, we design and utilize one-dimensional photonic crystal ring resonators (1D PhCRRs) to realize InGaAsP/SiO2 hybrid lasers via adhesive bonding technique. Single-mode lasing with low threshold from the dielectric mode is observed. To further design a nanocavity with mode gap effect in 1D PhCRR results in the reduced lasing threshold and increased vertical laser emissions, owing to the reduced dielectric mode volume and the broken rotational symmetry by the nanocavity. Such hybrid lasers based on 1D PhC rings provides good geometric integration ability and new scenario for designing versatile devices in photonic integrated circuits.

  12. Nanostructured porous silicon: The winding road from photonics to cell scaffolds. A review.

    Directory of Open Access Journals (Sweden)

    Jacobo eHernandez-Montelongo

    2015-05-01

    Full Text Available For over 20 years nanostructured porous silicon (nanoPS has found a vast number of applications in the broad fields of photonics and optoelectronics, triggered by the discovery of its photoluminescent behavior in 1990. Besides, its biocompatibility, biodegradability, and bioresorbability make porous silicon (PSi an appealing biomaterial. These properties are largely a consequence of its particular susceptibility to oxidation, leading to the formation of silicon oxide which is readily dissolved by body fluids. This paper reviews the evolution of the applications of PSi and nanoPS from photonics through biophotonics, to their use as cell scaffolds, whether as an implantable substitute biomaterial, mainly for bony and ophthalmological tissues, or as an in-vitro cell conditioning support, especially for pluripotent cells. For any of these applications, PSi/nanoPS can be used directly after synthesis from Si wafers, upon appropriate surface modification processes, or as a composite biomaterial. Unedited studies of fluorescently active PSi structures for cell culture are brought to evidence the margin for new developments.

  13. Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells.

    Science.gov (United States)

    Meng, Xianqin; Depauw, Valérie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Cécile; Fave, Alain; Dross, Frédéric; Gordon, Ivan; Seassal, Christian

    2012-07-02

    In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference time domain optical simulations are performed in order to design one- and two-dimensional photonic crystals to assist crystalline silicon solar cells. The simulations show that the 1D and 2D patterned solar cell stacks would have an increased integrated absorption in the crystalline silicon layer would increase of respectively 38% and 50%, when compared to a similar but unpatterned stack, in the whole wavelength range between 300 nm and 1100 nm. In order to fabricate such patterned stacks, we developed an effective set of processes based on laser holographic lithography, reactive ion etching and inductively coupled plasma etching. Optical measurements performed on the patterned stacks highlight the significant absorption increase achieved in the whole wavelength range of interest, as expected by simulation. Moreover, we show that with this design, the angle of incidence has almost no influence on the absorption for angles as high as around 60°.

  14. Nanostructured Porous Silicon: The Winding Road from Photonics to Cell Scaffolds – A Review

    Science.gov (United States)

    Hernández-Montelongo, Jacobo; Muñoz-Noval, Alvaro; García-Ruíz, Josefa Predestinación; Torres-Costa, Vicente; Martín-Palma, Raul J.; Manso-Silván, Miguel

    2015-01-01

    For over 20 years, nanostructured porous silicon (nanoPS) has found a vast number of applications in the broad fields of photonics and optoelectronics, triggered by the discovery of its photoluminescent behavior in 1990. Besides, its biocompatibility, biodegradability, and bioresorbability make porous silicon (PSi) an appealing biomaterial. These properties are largely a consequence of its particular susceptibility to oxidation, leading to the formation of silicon oxide, which is readily dissolved by body fluids. This paper reviews the evolution of the applications of PSi and nanoPS from photonics through biophotonics, to their use as cell scaffolds, whether as an implantable substitute biomaterial, mainly for bony and ophthalmological tissues, or as an in vitro cell conditioning support, especially for pluripotent cells. For any of these applications, PSi/nanoPS can be used directly after synthesis from Si wafers, upon appropriate surface modification processes, or as a composite biomaterial. Unedited studies of fluorescently active PSi structures for cell culture are brought to evidence the margin for new developments. PMID:26029688

  15. Enhancement of Light Localization in Hybrid Thue-Morse/Periodic Photonic Crystals

    Directory of Open Access Journals (Sweden)

    Rihab Asmi

    2016-01-01

    Full Text Available The electric field intensity in one-dimensional (1D quasiperiodic and hybrid photonics band-gap structures is studied in the present paper. The photonic structures are ordered according to Fibonacci, Thue-Morse, Cantor, Rudin-Shapiro, Period-Doubling, Paper-Folding, and Baum-Sweet sequences. The study shows that the electric field intensity is higher for the Thue-Morse multilayer systems. After that the Thue-Morse structure will be combined with a periodic structure to form a hybrid photonic structure. It is shown that this hybrid system is the best for a strong localization of light. The proposed structures have been modeled using the Transfer Matrix Method.

  16. Slow-light-enhanced energy efficiency for the graphene microheater on silicon photonic crystal waveguides

    CERN Document Server

    Yan, Siqi; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N Asger; Dong, Jianji; Ding, Yunhong

    2016-01-01

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions, and increased phase shifts owing to its ability to promote light-matter interactions. By incorporating a graphene microheater on a slow-light silicon photonic crystal waveguide, we experimentally demonstrated an energy-efficient graphene microheater with a tuning efficiency of 1.07 nm/mW and power consumption per free spectral range of 3.99 mW. The rise and decay times (10% to 90%) were only 750 ns and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding record-low figure of merit of the device was 2.543 nW.s, which is one order of magnitude lower than results reported in previous studies. The influences of the graphene-photonic crystal waveguide interaction length and the shape of the graphene heater were also investigated, providing valuable guidelines for enhancing the graphene microheater tuning efficiency.

  17. Enhanced optical nonlinearities in CMOS-compatible ultra-silicon-rich nitride photonic crystal waveguides

    Science.gov (United States)

    Sahin, E.; Ooi, K. J. A.; Chen, G. F. R.; Ng, D. K. T.; Png, C. E.; Tan, D. T. H.

    2017-09-01

    We present the design, fabrication, and characterization of photonic crystal waveguides (PhCWs) on an ultra-silicon-rich nitride (USRN) platform, with the goal of augmenting the optical nonlinearities. The design goals are to achieve an optimized group index curve on the PhCW band edge with a non-membrane PhCW with symmetric SiO2 undercladding and overcladding, so as to maintain back-end CMOS compatibility and better structural robustness. Linear optical characterization, as well as nonlinear optical characterization of PhCWs on ultra-silicon-rich nitride is performed at the telecommunication wavelengths. USRN's negligible two-photon absorption and free carrier losses at the telecommunication wavelengths ensure that there is no scaling of two-photon related losses with the group index, thus maintaining a high nonlinear efficiency. Self-phase modulation experiments are performed using a 96.6 μm PhCW. A 1.5π phase shift is achieved with an input peak power of 2.5 W implying an effective nonlinear parameter of 1.97 × 104 (W m)-1. This nonlinear parameter represents a 49× enhancement in the nonlinear parameter from the slow light effect, in good agreement with expected scaling from the measured group index.

  18. Label-free optical detection of bacteria on a 1-D photonic crystal of porous silicon

    Science.gov (United States)

    Wu, Chia-Chen; Alvarez, Sara D.; Rang, Camilla U.; Chao, Lin; Sailor, Michael J.

    2009-02-01

    The construction of a specific, label-free, bacteria biosensor using porous silicon 1-D photonic crystals will be described. Bacteria resident on the surface of porous silicon act as scattering centers for light resonant with the photonic crystal; the diffusely scattered light possesses the optical spectrum of the underlying photonic crystal. Using a spectrometer fitted to a light microscope, the bacteria are imaged without using exogenous dyes or labels and are quantified by measuring the intensity of scattered light. In order to selectively bind and identify bacteria using porous Si, we use surface modifications to reduce nonspecific binding to the surface and to engineer bacteria specificity onto the surface. Bovine serum albumin (BSA) was adsorbed to the porous Si surface to reduce nonspecific binding of bacteria. The coatings were then chemically activated to immobilize polyclonal antibodies specific to Escherichia coli. Two E. coli strains were used in our study, E. coli DH5α and non-pathogenic enterohemorrhagic Escherichia coli (EHEC) strain. The nonpathogenic Vibrio cholerae O1 strain was used to test for antibody specificity. Successful attachment of antibodies was measured using fluorescence microscopy and the scattering method was used to test for bacteria binding specificity.

  19. Hybrid Integrated Photonics for Ultrahigh Throughput Optical Signal Processing Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Structured Materials Industries, Inc. and Cornell University propose to develop high speed integrated photonic switches and WDM for LIDAR applications. The team has...

  20. One-dimensional/two-dimensional hybridization for self-supported binder-free silicon-based lithium ion battery anodes.

    Science.gov (United States)

    Wang, Bin; Li, Xianglong; Luo, Bin; Jia, Yuying; Zhi, Linjie

    2013-02-21

    A unique silicon-based anode for lithium ion batteries is developed via the facile hybridization of one-dimensional silicon nanowires and two-dimensional graphene sheets. The resulting paper-like film holds advantages highly desirable for not only accommodating the volume change of silicon, but also facilitating the fast transport of electron and lithium ions.

  1. Low-power chip-level optical interconnects based on bulk-silicon single-chip photonic transceivers

    Science.gov (United States)

    Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Kim, Sun Ae; Oh, Jin Hyuk; Park, Jaegyu; Kim, Sanggi

    2016-03-01

    We present new scheme for chip-level photonic I/Os, based on monolithically integrated vertical photonic devices on bulk silicon, which increases the integration level of PICs to a complete photonic transceiver (TRx) including chip-level light source. A prototype of the single-chip photonic TRx based on a bulk silicon substrate demonstrated 20 Gb/s low power chip-level optical interconnects between fabricated chips, proving that this scheme can offer compact low-cost chip-level I/O solutions and have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, 3D-IC, and LAN/SAN/data-center and network applications.

  2. Three-Dimensional Control of DNA Hybridization by Orthogonal Two-Color Two-Photon Uncaging.

    Science.gov (United States)

    Fichte, Manuela A H; Weyel, Xenia M M; Junek, Stephan; Schäfer, Florian; Herbivo, Cyril; Goeldner, Maurice; Specht, Alexandre; Wachtveitl, Josef; Heckel, Alexander

    2016-07-25

    We successfully introduced two-photon-sensitive photolabile groups ([7-(diethylamino)coumarin-4-yl]methyl and p-dialkylaminonitrobiphenyl) into DNA strands and demonstrated their suitability for three-dimensional photorelease. To visualize the uncaging, we used a fluorescence readout based on double-strand displacement in a hydrogel and in neurons. Orthogonal two-photon uncaging of the two cages is possible, thus enabling complex scenarios of three-dimensional control of hybridization with light.

  3. First-Principles Study of Electronic Structure of Type I Hybrid Carbon-Silicon Clathrates

    Science.gov (United States)

    Chan, Kwai S.; Peng, Xihong

    2016-08-01

    A new class of type I hybrid carbon-silicon clathrates has been designed using computational methods by substituting some of the Si atoms in the silicon clathrate framework with carbon atoms. In this work, the electronic structure of hybrid carbon-silicon clathrates with and without alkaline or alkaline-earth metal guest atoms has been computed within the density functional theory framework. The theoretical calculations indicate that a small number of carbon substitutions in the Si46 framework slightly reduces the density of states (DOS) near the band edge and narrows the bandgap of carbon-silicon clathrates. Weak hybridization of the conduction band occurs when alkaline metal (Li, Na, K) atoms are inserted into the structure, while strong hybridization of the conduction band occurs when alkaline-earth metal (Mg, Ca, Ba) atoms are inserted into the hybrid structure. Empty C y Si46- y clathrates within the composition range of 2 ≤ y ≤ 15 can be tuned to exhibit indirect bandgaps of 1.5 eV or less, and may be considered as potential electronic materials.

  4. A new cell-selective three-dimensional microincubator based on silicon photonic crystals.

    Directory of Open Access Journals (Sweden)

    Francesca Carpignano

    Full Text Available In this work, we show that vertical, high aspect-ratio (HAR photonic crystals (PhCs, consisting of periodic arrays of 5 µm wide gaps with depth of 50 µm separated by 3 µm thick silicon walls, fabricated by electrochemical micromachining, can be used as three-dimensional microincubators, allowing cell lines to be selectively grown into the gaps. Silicon micromachined dice incorporating regions with different surface profiles, namely flat silicon and deeply etched PhC, were used as microincubators for culturing adherent cell lines with different morphology and adhesion properties. We extensively investigated and compared the proliferative behavior on HAR PhCs of eight human cell models, with different origins, such as the epithelial (SW613-B3; HeLa; SW480; HCT116; HT29 and the mesenchymal (MRC-5V1; CF; HT1080. We also verified the contribution of cell sedimentation into the silicon gaps. Fluorescence microscopy analysis highlights that only cell lines that exhibit, in the tested culture condition, the behavior typical of the mesenchymal phenotype are able to penetrate into the gaps of the PhC, extending their body deeply in the narrow gaps between adjacent silicon walls, and to grow adherent to the vertical surfaces of silicon. Results reported in this work, confirmed in various experiments, strongly support our statement that such three-dimensional microstructures have selection capabilities with regard to the cell lines that can actively populate the narrow gaps. Cells with a mesenchymal phenotype could be exploited in the next future as bioreceptors, in combination with HAR PhC optical transducers, e.g., for label-free optical detection of cellular activities involving changes in cell adhesion and/or morphology (e.g., apoptosis in a three-dimensional microenvironment.

  5. Tailoring the parametric gain in large mode area hybrid photonic crystal fibers

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard

    2013-01-01

    The spectral width of parametric gain peaks due to degenerate four-wave mixing is investigated numerically in large-mode-area hybrid photonic crystal fibers. The width is varied for a maintained pump wavelength and gain maximum position by tailoring the dispersion.......The spectral width of parametric gain peaks due to degenerate four-wave mixing is investigated numerically in large-mode-area hybrid photonic crystal fibers. The width is varied for a maintained pump wavelength and gain maximum position by tailoring the dispersion....

  6. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    Science.gov (United States)

    Pathi, Prathap; Peer, Akshit; Biswas, Rana

    2017-01-01

    Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

  7. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Pathi, Prathap; Peer, Akshit; Biswas, Rana

    2017-01-13

    Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

  8. Silicon photonic Mach Zehnder modulators for next-generation short-reach optical communication networks

    Science.gov (United States)

    Lacava, C.; Liu, Z.; Thomson, D.; Ke, Li; Fedeli, J. M.; Richardson, D. J.; Reed, G. T.; Petropoulos, P.

    2016-02-01

    Communication traffic grows relentlessly in today's networks, and with ever more machines connected to the network, this trend is set to continue for the foreseeable future. It is widely accepted that increasingly faster communications are required at the point of the end users, and consequently optical transmission plays a progressively greater role even in short- and medium-reach networks. Silicon photonic technologies are becoming increasingly attractive for such networks, due to their potential for low cost, energetically efficient, high-speed optical components. A representative example is the silicon-based optical modulator, which has been actively studied. Researchers have demonstrated silicon modulators in different types of structures, such as ring resonators or slow light based devices. These approaches have shown remarkably good performance in terms of modulation efficiency, however their operation could be severely affected by temperature drifts or fabrication errors. Mach-Zehnder modulators (MZM), on the other hand, show good performance and resilience to different environmental conditions. In this paper we present a CMOS-compatible compact silicon MZM. We study the application of the modulator to short-reach interconnects by realizing data modulation using some relevant advanced modulation formats, such as 4-level Pulse Amplitude Modulation (PAM-4) and Discrete Multi-Tone (DMT) modulation and compare the performance of the different systems in transmission.

  9. Fabrication of Silicon Nanobelts and Nanopillars by Soft Lithography for Hydrophobic and Hydrophilic Photonic Surfaces.

    Science.gov (United States)

    Baquedano, Estela; Martinez, Ramses V; Llorens, José M; Postigo, Pablo A

    2017-05-11

    Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the depth and the physical properties of the stamp. In this work, silicon nanobelts and nanostructures were achieved by combining soft nanolithography patterning with optimized reactive ion etching (RIE) in silicon. Using polymethylmethacrylate (PMMA) nanopatterned layers with thicknesses ranging between 14 and 50 nm, we obtained silicon nanobelts in areas of square centimeters with aspect ratios up to ~1.6 and linewidths of 225 nm. The soft lithographic process was assisted by a thin film of SiOx (less than 15 nm) used as a hard mask and RIE. This simple patterning method was also used to fabricate 2D nanostructures (nanopillars) with aspect ratios of ~2.7 and diameters of ~200 nm. We demonstrate that large areas patterned with silicon nanobelts exhibit a high reflectivity peak in the ultraviolet C (UVC) spectral region (280 nm) where some aminoacids and peptides have a strong absorption. We also demonstrated how to tailor the aspect ratio and the wettability of these photonic surfaces (contact angles ranging from 8.1 to 96.2°) by changing the RIE power applied during the fabrication process.

  10. Analysis of the inner collection efficiency in hybrid silicon solar cells

    OpenAIRE

    Nubile, P.; Torres, P; Hof, Ch.; Fischer, D.

    2008-01-01

    The collection of photogenerated carriers in hybrid silicon solar cells structures were determined by the DICE (dynamic inner collection efficiency) technique. The hybrid solar cells have a microcrystalline n-type emitter and a crystalline p-type base. Cells with amorphous buffers of several thickness and p+ back surface field microcrystalline layers were also studied. Spectral response and reflectivity were measured for each sample in order to obtain the internal spectral response or quantum...

  11. Improved performance of silicon nanowire/cadmium telluride quantum dots/organic hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Zhaoyun [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Jiangsu University of Science and Technology, Zhenjiang 212003, Jiangsu Province (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang, Renqi; Xue, Zhaoguo; Wang, Hongyu; Xu, Jun; Yu, Yao; Su, Weining; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2015-04-15

    Highlights: • We introduce an intermediate cadmium telluride quantum dots (CdTe QDs) layer between the organic with silicon nanowires of hybrid solar cells as a down-shifting layer. • The hybrid solar cell got the maximum short circuit current density of 33.5 mA/cm{sup 2}, getting an increase of 15.1% comparing to solar cell without CdTe QDs. • The PCE of the hybrid solar cells with CdTe QDs layer increases 28.8%. - Abstract: We fabricated silicon nanowire/cadmium telluride quantum dots (CdTe QDs)/organic hybrid solar cells and investigated their structure and electrical properties. Transmission electron microscope revealed that CdTe QDs were uniformly distributed on the surface of the silicon nanowires, which made PEDOT:PSS easily filled the space between SiNWs. The current density–voltage (J–V) characteristics of hybrid solar cells were investigated both in dark and under illumination. The result shows that the performance of the hybrid solar cells with CdTe QDs layer has an obvious improvement. The optimal short-circuit current density (J{sub sc}) of solar cells with CdTe QDs layer can reach 33.5 mA/cm{sup 2}. Compared with the solar cells without CdTe QDs, J{sub sc} has an increase of 15.1%. Power conversion efficiency of solar cells also increases by 28.8%. The enhanced performance of the hybrid solar cells with CdTe QDs layers are ascribed to down-shifting effect of CdTe QDs and the modification of the silicon nanowires surface with CdTe QDs. The result of our experiments suggests that hybrid solar cells with CdTe QDs modified are promising candidates for solar cell application.

  12. Integrated programmable photonic filter on the silicon-on-insulator platform.

    Science.gov (United States)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe; Yang, Ting; Dong, Jianji; Zhang, Xinliang

    2014-12-29

    We propose and demonstrate a silicon-on-insulator (SOI) on-chip programmable filter based on a four-tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heaters. We further demonstrate the tunability of the filter central wavelength, bandwidth and variable passband shape. The tuning range of the central wavelength is at least 42% of the free spectral range. The bandwidth tuning range is at least half of the free spectral range. Our scheme has distinct advantages of compactness, capability for integrating with electronics.

  13. Single photon timing resolution and detection efficiency of the IRST silicon photo-multipliers

    Energy Technology Data Exchange (ETDEWEB)

    Collazuol, G. [Scuola Normale Superiore, 56127 Pisa (Italy); INFN Sezione di Pisa, 56127 Pisa (Italy)], E-mail: gianmaria.collazuol@pi.infn.it; Ambrosi, G. [INFN Sezione di Perugia, 06123 Perugia (Italy); Boscardin, M. [Fondazione Bruno Kessler - IRST, Divisione Microsistemi, 38050 Trento (Italy); Corsi, F. [DEE-Politecnico di Bari and INFN Sezione di Bari, 70125 Bari (Italy); Dalla Betta, G.F. [INFN Sezione di Padova, Gruppo Collegato di Trento, 38050 Trento (Italy); Del Guerra, A. [INFN Sezione di Pisa, 56127 Pisa (Italy); Dipartimento di Fisica, Universita di Pisa, 56127 Pisa (Italy); Dinu, N. [INFN Sezione di Padova, Gruppo Collegato di Trento, 38050 Trento (Italy); Galimberti, M. [Intense Laser Irradiation Laboratory, IPCF-CNR, 56127 Pisa (Italy); Giulietti, D. [INFN Sezione di Pisa, 56127 Pisa (Italy); Dipartimento di Fisica, Universita di Pisa, 56127 Pisa (Italy); Intense Laser Irradiation Laboratory, IPCF-CNR, 56127 Pisa (Italy); Gizzi, L.A.; Labate, L. [INFN Sezione di Pisa, 56127 Pisa (Italy); Intense Laser Irradiation Laboratory, IPCF-CNR, 56127 Pisa (Italy); Llosa, G.; Marcatili, S. [INFN Sezione di Pisa, 56127 Pisa (Italy); Dipartimento di Fisica, Universita di Pisa, 56127 Pisa (Italy); Morsani, F. [INFN Sezione di Pisa, 56127 Pisa (Italy); Piemonte, C.; Pozza, A. [Fondazione Bruno Kessler - IRST, Divisione Microsistemi, 38050 Trento (Italy); Zaccarelli, L. [INFN Sezione di Pisa, 56127 Pisa (Italy); Zorzi, N. [Fondazione Bruno Kessler - IRST, Divisione Microsistemi, 38050 Trento (Italy)

    2007-10-21

    Silicon photo-multipliers (SiPM) consist in matrices of tiny, passive quenched avalanche photo-diode cells connected in parallel via integrated resistors and operated in Geiger mode. Novel types of SiPM are being developed at FBK-IRST (Trento, Italy). Despite their classical shallow junction n-on-p structure the devices are unique in their enhanced photo-detection efficiency (PDE) for short-wavelengths and in their low level of dark rate and excess noise factor. After a summary of the extensive SiPM characterization we will focus on the study of PDE and the single photon timing resolution.

  14. Geant4 simulation of optical photon transport in scintillator tile with direct readout by silicon photomultiplier

    Science.gov (United States)

    Korpachev, S.; Chadeeva, M.

    2017-01-01

    The direct coupling of silicon photomultiplier to the scintillator tile is considered to be the main option for active elements of the highly granular hadron calorimeter developed for future linear collider experiments. In this study, the response of the scintillator-SiPM system to minimum ionising particles was simulated using the optical photon transport functionality available in the Geant4 package. The uniformity of response for both flat tile and tile with dimple was estimated from the simulations and compared to the experimental results obtained in the previous studies.

  15. Observation of Transparency of Erbium-doped Silicon nitride in photonic crystal nanobeam cavities

    CERN Document Server

    Gong, Yiyang; Yerci, Selcuk; Li, Rui; Stevens, Martin J; Baek, Burm; Nam, Sae Woo; Negro, Luca Dal; Vuckovic, Jelena

    2010-01-01

    One-dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 um is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time-resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.

  16. III-V/silicon photonic integrated circuits for communication and sensing applications

    Science.gov (United States)

    Roelkens, Gunther; Keyvaninia, Shahram; Stankovic, Stevan; De Koninck, Yannick; Tassaert, Martijn; Mechet, Pauline; Spuesens, Thijs; Hattasan, N.; Gassenq, A.; Muneeb, M.; Ryckeboer, E.; Ghosh, Samir; Van Thourhout, D.; Baets, R.

    2013-03-01

    In this paper we review our work in the field of heterogeneous integration of III-V semiconductors and non-reciprocal optical materials on a silicon waveguide circuit. We elaborate on the heterogeneous integration technology based on adhesive DVS-BCB die-to-wafer bonding and discuss several device demonstrations. The presented devices are envisioned to be used in photonic integrated circuits for communication applications (telecommunications and optical interconnects) as well as in spectroscopic sensing systems operating in the short-wave infrared wavelength range.

  17. Spiral-path high-sensitivity silicon photonic wire molecular sensor with temperature-independent response.

    Science.gov (United States)

    Densmore, A; Xu, D-X; Janz, S; Waldron, P; Mischki, T; Lopinski, G; Delâge, A; Lapointe, J; Cheben, P; Lamontagne, B; Schmid, J H

    2008-03-15

    We demonstrate a new silicon photonic wire waveguide evanescent field (PWEF) sensor that exploits the strong evanescent field of the transverse magnetic mode of this high-index-contrast, submicrometer-dimension waveguide. High sensitivity is achieved by using a 2 mm long double-spiral waveguide structure that fits within a compact circular area of 150 microm diameter, facilitating compatibility with commercial spotting apparatus and the fabrication of densely spaced sensor arrays. By incorporating the PWEF sensor element into a balanced waveguide Mach-Zehnder interferometer circuit, a minimum detectable mass of approximately 10 fg of streptavidin protein is demonstrated with near temperature-independent response.

  18. Optical properties of organic-silicon photonic crystal nanoslot cavity light source

    Science.gov (United States)

    Yang, Ming-Jay; Lin, Chun-Chi; Wu, Yu-Shu; Wang, Likarn; Na, Neil

    2017-03-01

    We theoretically study a dielectric photonic crystal nanoslot cavity immersed in an organic fluid containing near-infrared dyes by means of a full rate equation model including the complete cavity QED effects. Based on the modeling results, we numerically design an organic-silicon cavity light source in which its mode volume, quality factor, and far-field emission pattern are optimized for energy-efficient, high-speed applications. Dye quantum efficiency improved by two orders of magnitude and 3dB modulation bandwidth of a few hundred GHz can be obtained.

  19. One-way optical transmission in silicon photonic crystal heterojunction with circular and square scatterers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Dan, E-mail: liudanhu725@126.com [School of Physics and Mechanical & Electrical Engineering, Hubei University of Education, Wuhan, 430205 (China); Hu, Sen [School of Physics and Mechanical & Electrical Engineering, Hubei University of Education, Wuhan, 430205 (China); Gao, Yihua [Wuhan National Laboratory for Optoelectronics (WNLO), School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)

    2017-07-12

    A 2D orthogonal square-lattice photonic crystal (PC) heterojunction consisting of circular and square air holes in silicon is presented. Band structures are calculated using the plane wave expansion method, and the transmission properties are investigated by the finite-different time-domain simulations. Thanks to the higher diffraction orders excited when the circular and square holes are interlaced along the interface, one-way transmission phenomena can exist within wide frequency regions. The higher order diffraction is further enhanced through two different interface optimization designs proposed by modifying the PC structure of the hetero-interface. An orthogonal PC heterojunction for wide-band and efficient one-way transmission is constructed, and the maximum transmissivity is up to 78%. - Highlights: • Photonic crystal heterojunction with circular and square scatterers is first studied. • One-way transmission efficiency is closely related to the hetero-interface. • Wide-band and efficient one-way transmission is realized.

  20. Theory of Pulsed Four-Wave-Mixing in One-dimensional Silicon Photonic Crystal Slab Waveguides

    CERN Document Server

    Lavdas, Spyros

    2015-01-01

    We present a comprehensive theoretical analysis and computational study of four-wave mixing (FWM) of optical pulses co-propagating in one-dimensional silicon photonic crystal waveguides (Si-PhCWGs). Our theoretical analysis describes a very general set-up of the interacting optical pulses, namely we consider nondegenerate FWM in a configuration in which at each frequency there exists a superposition of guiding modes. We incorporate in our theoretical model all relevant linear optical effects, including waveguide loss, free-carrier (FC) dispersion and FC absorption, nonlinear optical effects such as self- and cross-phase modulation (SPM, XPM), two-photon absorption (TPA), and cross-absorption modulation (XAM), as well as the coupled dynamics of FCs and optical field. In particular, our theoretical analysis based on the coupled-mode theory provides rigorously derived formulae for linear dispersion coefficients of the guiding modes, linear coupling coefficients between these modes, as well as the nonlinear waveg...

  1. Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET

    CERN Document Server

    Koyama, Akihiro; Takahashi, Hiroyuki; Orita, Tadashi; Arai, Yasuo; Kurachi, Ikuo; Miyoshi, Toshinobu; Nio, Daisuke; Hamasaki, Ryutaro

    2015-01-01

    To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche multiplication. However higher gain of SPAD seems very attractive, photon detection efficiency per unit area is low. This weak point is mainly caused by Geiger avalanche mechanism. To overcome these difficulties, we designed Pixelated Linear Avalanche Integration Detector using Silicon on Insulator technology (SOI-Plaid). To avoid dark count noise and dead time comes from quench circuit, we are planning to use APD in linear multiplication mode. SOI technology enables laminating readout circuit and APD layer, and high-speed and low-noise signal reading regardless smaller gain of linear APD. This study shows design of linear APD by using SOI fabrication process. We designed test element group (TEG) of linear APD and inspected optimal structure of linear APD.

  2. Photonic crystal dumbbell resonators in silicon and aluminum nitride integrated optical circuits

    CERN Document Server

    Pernice, W H P; Tang, H X

    2014-01-01

    Tight confinement of light in photonic cavities provides an efficient template for the realization of high optical intensity with strong field gradients. Here we present such a nanoscale resonator device based on a one-dimensional photonic crystal slot cavity. Our design allows for realizing highly localized optical modes with theoretically predicted Q factors in excess of 106. The design is demonstrated experimentally both in a high-contrast refractive index system (silicon), as well as in medium refractive index contrast devices made from aluminum nitride. We achieve extinction ratio of 21dB in critically coupled resonators using an on-chip readout platform with loaded Q factors up to 33,000. Our approach holds promise for realizing ultra-small opto-mechanical resonators for high-frequency operation and sensing applications.

  3. Sensitive temperature measurements based on Lorentzian and Fano resonance lineshapes of a silicon photonic crystal cavity

    Science.gov (United States)

    Zhao, Chenyang; Fang, Liang; Yuan, Qinchen; Gan, Xuetao; Zhao, Jianlin

    2016-10-01

    We report a high-performance photonic temperature sensor by exploiting a silicon photonic crystal (PC) cavity. Since the PC cavity's spectra are very sensitive to the refractive index change, we observe remarkable variations of its resonant wavelength and output power under varying temperature levels. In a PC cavity with Lorentzian resonance lineshape, the sensor exhibits a linear spectrum-sensitivity of 70 pm/°, and the power-variation presents a high sensitivity as 1.28 dB/°. In addition, the Fano resonance lineshape generated by the PC cavity has also been employed to measure the temperature, which shows improved power sensitivity as 2.94 dB/ °. The demonstrated PC cavity-based sensor offers great potentials for low-cost, high sensitivity homogeneous sensing in chip-integrated devices.

  4. DAPHNE silicon photonics technological platform for research and development on WDM applications

    Science.gov (United States)

    Baudot, Charles; Fincato, Antonio; Fowler, Daivid; Perez-Galacho, Diego; Souhaité, Aurélie; Messaoudène, Sonia; Blanc, Romuald; Richard, Claire; Planchot, Jonathan; De-Buttet, Come; Orlando, Bastien; Gays, Fabien; Mezzomo, Cécilia; Bernard, Emilie; Marris-Morini, Delphine; Vivien, Laurent; Kopp, Christophe; Boeuf, Frédéric

    2016-05-01

    A new technological platform aimed at making prototypes and feasibility studies has been setup at STMicroelectronics using 300mm wafer foundry facilities. The technology, called DAPHNE (Datacom Advanced PHotonic Nanoscale Environment), is devoted at developing and evaluating new devices and sub-systems in particular for wavelength division multiplexing (WDM) applications and ring resonator based applications. Developed in the course of PLAT4MFP7 European project, DAPHNE is a flexible platform that fits perfectly R&D needs. The fabrication flow enables the processing of photonic integrated circuits using a silicon-on-insulator (SOI) of 300nm, partial etches of 150nm and 50nm and a total silicon etching. Consequently, two varieties of rib waveguides and one strip waveguide can be fabricated simultaneously with auto-alignment properties. The process variability on the 150nm partially etched silicon and the thin 50nm slab region are both less than 6 nm. Using a variety of different implantation configurations and a back-end of line of 5 metal layers, active devices are fabricated both in germanium and silicon. An available far back-end of line process consists of making 20 μm diameter copper posts on top of the electrical pads so that an electronic integrated circuit can be bonded on top the photonic die by 3D integration. Besides having those fabrication process options, DAPHNE is equipped with a library of standard cells for optical routing and multiplexing. Moreover, typical Mach-Zehnder modulators based on silicon pn junctions are also available for optical signal modulation. To achieve signal detection, germanium photodetectors also exist as standard cells. The measured single-mode propagation losses are 3.5 dB/cm for strip, 3.7 dB/cm for deep-rib (50nm slab) and 1.4 dB/cm for standard rib (150nm slab) waveguides. Transition tapers between different waveguide structures are as low as 0.006 dB.

  5. Hybrid microfiber-lithium-niobate nanowaveguide structures as high-purity heralded single-photon sources

    Science.gov (United States)

    Main, Philip; Mosley, Peter J.; Ding, Wei; Zhang, Lijian; Gorbach, Andrey V.

    2016-12-01

    We propose a compact, fiber-integrated architecture for photon-pair generation by parametric downconversion with unprecedented flexibility in the properties of the photons produced. Our approach is based on a thin-film lithium niobate nanowaveguide, evanescently coupled to a tapered silica microfiber. We demonstrate how controllable mode hybridization between the fiber and waveguide yields control over the joint spectrum of the photon pairs. We also investigate how independent engineering of the linear and nonlinear properties of the structure can be achieved through the addition of a tapered, proton-exchanged layer to the waveguide. This allows further refinement of the joint spectrum through custom profiling of the effective nonlinearity, drastically improving the purity of the heralded photons. We give details of a source design capable of generating heralded single photons in the telecom wavelength range with purity of at least 0.95, and we provide a feasible fabrication methodology.

  6. Coupling of semiconductor carbon nanotubes emission with silicon photonic micro ring resonators

    Science.gov (United States)

    Sarti, Francesco; Caselli, Niccolò; La China, Federico; Biccari, Francesco; Torrini, Ughetta; Intonti, Francesca; Vinattieri, Anna; Durán-Valdeiglesias, Elena; Zhang, Weiwei; Noury, Adrien; Alonso-Ramos, Carlos; Hoang, ThiHong Cam; Serna, Samuel; Le Roux, Xavier; Cassan, Eric; Izard, Nicolas; Yang, Hongliu; Bezugly, Viktor; Cuniberti, Gianaurelio; Filoramo, Arianna; Vivien, Laurent; Gurioli, Massimo

    2016-05-01

    Hybrid structures are needed to fully exploit the great advantages of Si photonics and several approaches have been addressed where Si devices are bonded to different materials and nanostructures. Here we study the use of semiconductor carbon nanotubes for emission in the 1300 nm wavelength range to functionalize Si photonic structures in view of optoelectronic applications. The Si micro-rings are fully characterized by near field forward resonant scattering with 100 nm resolution. We show that both TE and TM modes can be addressed on the top of the micro-rings in a vectorial imaging of the in-plane polarization components. We coupled the Si micro-resonators with selected carbon nanotubes for high photoluminescence emission. Coupling nanotubes with the evanescent tails in air of the electric field localized in the photonic modes of the micro-resonators is demonstrated by sharp resonances over imposed to the nanotube emission bands. By mapping the Si and the nanotube emission we demonstrate that strong enhancement of the nanotube photoluminescence can be achieved both in the photonic modes of micro-disks and slot micro-rings, whenever the spatial overlap between nano-emitters and photonic modes is fulfilled.

  7. A compact, integrated silicon device for the generation of spectrally filtered, pair-correlated photons

    Science.gov (United States)

    Minkov, Momchil; Savona, Vincenzo

    2016-05-01

    The third-order nonlinearity of silicon gives rise to a spontaneous four-wave mixing process in which correlated photon pairs are generated. Sources based on this effect can be used for quantum computation and cryptography, and can in principle be integrated with standard CMOS fabrication technology and components. However, one of the major challenges is the on-chip demultiplexing of the photons, and in particular the filtering of the pump power, which is many orders of magnitude larger than that of the signal and idler photons. Here, we propose a photonic crystal coupled-cavity system designed so that the coupling of the pump mode to the output channel is strictly zero due to symmetry. We further analyze this effect in the presence of fabrication disorder and find that, even then, a pump suppression of close to 40 dB can be achieved in state-of-the-art systems. Due to the small mode volumes and high quality factors, our system is also expected to have a generation efficiency much higher than in standard micro-ring systems. Those two considerations make a strong case for the integration of our proposed design in future on-chip quantum technologies.

  8. A compact, integrated silicon device for the generation of spectrally-filtered, pair-correlated photons

    CERN Document Server

    Minkov, Momchil

    2016-01-01

    The third-order non-linearity of silicon gives rise to a spontaneous four-wave mixing process in which correlated photon pairs are generated. Sources based on this effect can be used for quantum computation and cryptography, and can in principle be integrated with standard CMOS fabrication technology and components. However, one of the major challenges is the on-chip demultiplexing of the photons, and in particular the filtering of the pump power, which is many orders of magnitude larger than that of the signal and idler photons. Here, we propose a photonic crystal coupled-cavity system designed so that the coupling of the pump mode to the output channel is strictly zero due to symmetry. We further analyze this effect in presence of fabrication disorder and find that, even then, a pump suppression of close to 40 dB can be achieved in state-of-the art systems. Due to the small mode volumes and high quality factors, our system is also expected to have a generation efficiency much higher than in standard micro-r...

  9. Biomimetic and plasmonic hybrid light trapping for highly efficient ultrathin crystalline silicon solar cells.

    Science.gov (United States)

    Zhang, Y; Jia, B; Gu, M

    2016-03-21

    Designing effective light-trapping structures for the insufficiently absorbed long-wavelength light in ultrathin silicon solar cells represents a key challenge to achieve low cost and highly efficient solar cells. We propose a hybrid structure based on the biomimetic silicon moth-eye structure combined with Ag nanoparticles to achieve advanced light trapping in 2 μm thick crystalline silicon solar cells approaching the Yablonovitch limit. By synergistically using the Mie resonances of the silicon moth-eye structure and the plasmonic resonances of the Ag nanoparticles, the integrated absorption enhancement achieved across the usable solar spectrum is 69% compared with the cells with the conventional light trapping design. This is significantly larger than both the silicon moth-eye structure (58%) and Ag nanoparticle (41%) individual light trapping. The generated photocurrent in the 2 μm thick silicon layer is as large as 33.4 mA/cm2, which is equivalent to that generated by a 30 μm single-pass absorption in the silicon. The research paves the way for designing highly efficient light trapping structures in ultrathin silicon solar cells.

  10. Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

    Energy Technology Data Exchange (ETDEWEB)

    Bayindir, M.; Tanriseven, S.; Aydinli, A.; Ozbay, E. [Bilkent Univ., Ankara (Turkey). Dept. of Physics

    2001-07-01

    We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation. (orig.)

  11. Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

    Science.gov (United States)

    Bayindir, M.; Tanriseven, S.; Aydinli, A.; Ozbay, E.

    We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation.

  12. Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire; Sagnes, Isabelle; Raj, Rama [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Lenglé, Kevin; Gay, Mathilde; Bramerie, Laurent [Université Européenne de Bretagne (UEB), 5 Boulevard Laënnec, 35000 Rennes (France); CNRS-Foton Laboratory (UMR 6082), Enssat, BP 80518, 22305 Lannion Cedex (France); Braive, Rémy; Raineri, Fabrice, E-mail: fabrice.raineri@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Université Paris Diderot, Sorbonne Paris Cité, 75207 Paris Cedex 13 (France)

    2014-01-06

    Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

  13. Photonic crystal fiber with a hybrid honeycomb cladding

    DEFF Research Database (Denmark)

    Mortensen, Niels Asger; Nielsen, Martin Dybendal; Folkenberg, Jacob Riis;

    2004-01-01

    be formed by manipulating the cladding region ratherthan the core region itself. Germanium-doping of the honeycomb lattice has recently been suggested for the formation of a photonic band-gap guiding silica-core and here we experimentally demonstrate how an index-guiding silica-core can be formed...

  14. Photonic engineering of hybrid metal-organic chromophores

    CERN Document Server

    Busson, Mickaël P; Stout, Brian; Bonod, Nicolas; Wenger, Jérôme; Bidault, Sébastien; 10.1002/anie.201205995

    2012-01-01

    We experimentally demonstrate control of the absorption and emission properties of individual emitters by photonic antennas in suspension. The method results in a new class of water-soluble chromophores with unprecedented photophysical properties, such as short lifetime, low quantum yield but high brightness.

  15. Photonic devices based on black phosphorus and related hybrid materials

    Science.gov (United States)

    Vitiello, M. S.; Viti, L.

    2016-08-01

    Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective means for the manipulation and control of carriers, from the visible to the far-infrared, leading to the development of highly efficient devices like sources, detectors and modulators. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in devices based on inorganic two-dimensional (2D) materials. Amongst them, black phosphorus (BP) recently showed an extraordinary potential in a variety of applications across micro-electronics and photonics. With an energy gap between the gapless graphene and the larger gap transition metal dichalcogenides, BP can form the basis for a new generation of high-performance photonic devices that could be specifically engineered to comply with different applications, like transparent saturable absorbers, fast photocounductive switches and low noise photodetectors, exploiting its peculiar electrical, thermal and optical anisotropy. This paper will review the latest achievements in black-phosphorus-based THz photonics and discuss future perspectives of this rapidly developing research field.

  16. Collective phenomena in photonic, plasmonic and hybrid structures.

    Science.gov (United States)

    Boriskina, Svetlana V; Povinelli, Michelle; Astratov, Vasily N; Zayats, Anatoly V; Podolskiy, Viktor A

    2011-10-24

    Preface to a focus issue of invited articles that review recent progress in studying the fundamental physics of collective phenomena associated with coupling of confined photonic, plasmonic, electronic and phononic states and in exploiting these phenomena to engineer novel devices for light generation, optical sensing, and information processing. © 2011 Optical Society of America

  17. Pyramidal texturing of silicon surface via inorganic-organic hybrid alkaline liquor for heterojunction solar cells

    Science.gov (United States)

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Zhao, Ying

    2015-10-01

    We demonstrate a new class of silicon texturing approach based on inorganic (sodium hydroxide, NaOH) and organic (tetramethylammonium hydroxide, TMAH) alkaline liquor etching processes for photovoltaic applications. The first stage of inorganic alkaline etching textures the silicon surface rapidly with large pyramids and reduces the cost. The subsequent organic alkaline second-etching improves the coverage of small pyramids on the silicon surface and strip off the metallic contaminants produced by the first etching step. In addition, it could smoothen the surface of the pyramids to yield good morphology. In this study, the texturing duration of both etching steps was controlled to optimize the optical and electrical properties as well as the surface morphology and passivation characteristics of the silicon substrates. Compared with traditional inorganic NaOH texturing, this hybrid process yields smoother (111) facets of the pyramids, fewer residual Na+ ions on the silicon surface, and a shorter processing period. It also offers the advantage of lower cost compared with the organic texturing method based on the use of only TMAH. We applied this hybrid texturing process to fabricate silicon heterojunction solar cells, which showed a remarkable improvement compared with the cells based on traditional alkaline texturing processes.

  18. Large-mode-area hybrid photonic crystal fiber amplifier at 1178 nm

    DEFF Research Database (Denmark)

    Petersen, Sidsel Rübner; Chen, Mingchen; Shirakawa, Akira

    2015-01-01

    Amplification of 1178 nm light is demonstrated in a large-mode-area single-mode ytterbium-doped hybrid photonic crystal fiber, relying on distributed spectral filtering of spontaneous emission at shorter wavelengths. An output power of 53 W is achieved with 29 dB suppression of parasitic lasing...

  19. mm-Wave Hybrid Photonic Wireless Links for Ultra-High Speed Wireless Transmissions

    DEFF Research Database (Denmark)

    Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency range are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Large FCC spectrum allocations for wireless transmission...

  20. THz waveguides, devices and hybrid polymer-chalcogenide photonic crystal fibers

    DEFF Research Database (Denmark)

    Bao, Hualong; Markos, Christos; Nielsen, Kristian;

    2014-01-01

    In this contribution, we review our recent activities in the design, fabrication and characterization of polymer THz waveguides. Besides the THz waveguides, we finally will also briefly show some of our initial results on a novel hybrid polymer photonic crystal fiber with integrated chalcogenide...

  1. LHCb: Quantum Efficiency of Hybrid Photon Detectors for the LHCb RICH

    CERN Multimedia

    Lambert, Robert W

    2007-01-01

    The production of 550 hybrid photon detectors to be used within the LHCb RICH detectors has recently finished. Photonis-DEP have succeeded in consistently improving the tube quantum efficiency, by a relative 27,% with respect to preseries and prototype tubes, when integrated over the energy spectrum.

  2. Fabrication and characterization of materials and structures for hybrid organic-inorganic photonics

    Science.gov (United States)

    Haško, Daniel; Chovan, Jozef; Uherek, František

    2017-03-01

    Hybrid organic-inorganic integrated photonics integrate the organic material, as a part of active layer, with inorganic structure, and it is the organic component that extends the functionalities as compared to inorganic photonics. This paper presents the results of fabrication and characterization of inorganic and organic layers, as well as of hybrid organic-inorganic structures. Inorganic oxide and nitride materials and structures were grown using plasma enhanced chemical vapor deposition. As a substrate for tested organic layers and for preparation of multilayer structures, commercially available SiO2 created by thermal oxidation on Si was used. The hybrid organic-inorganic structures were prepared by spin coating of organic materials on SiO2/Si inorganic structures. As the basic photonics devices, the testing strip inorganic and organic waveguides were fabricated using reactive ion etching. The shape of fabricated testing waveguides was trapezoidal and etched structures were able to guide the radiation. The presented technology enabled to prepare hybrid organic-inorganic structures of comparable dimensions and shape. The fabricated waveguides dimensions and shape will be used for optimisation and design of new lithographic mask to prepare photonic components with required characteristics.

  3. Radiation Hard Silicon Photonics Mach-Zehnder Modulator for HEP applications: all-Synopsys Sentaurus™ Pre-Irradiation Simulation

    CERN Document Server

    Cammarata, Simone

    2017-01-01

    Silicon Photonics may well provide the opportunity for new levels of integration between detectors and their readout electronics. This technology is thus being evaluated at CERN in order to assess its suitability for use in particle physics experiments. In order to check the agreement with measurements and the validity of previous device simulations, a pure Synopsys Sentaurus™ simulation of an un-irradiated Mach-Zehnder silicon modulator has been carried out during the Summer Student project.

  4. Two dimensional thermo-optic beam steering using a silicon photonic optical phased array

    Science.gov (United States)

    Mahon, Rita; Preussner, Marcel W.; Rabinovich, William S.; Goetz, Peter G.; Kozak, Dmitry A.; Ferraro, Mike S.; Murphy, James L.

    2016-03-01

    Components for free space optical communication terminals such as lasers, amplifiers, and receivers have all seen substantial reduction in both size and power consumption over the past several decades. However, pointing systems, such as fast steering mirrors and gimbals, have remained large, slow and power-hungry. Optical phased arrays provide a possible solution for non-mechanical beam steering devices that can be compact and lower in power. Silicon photonics is a promising technology for phased arrays because it has the potential to scale to many elements and may be compatible with CMOS technology thereby enabling batch fabrication. For most free space optical communication applications, two-dimensional beam steering is needed. To date, silicon photonic phased arrays have achieved two-dimensional steering by combining thermo-optic steering, in-plane, with wavelength tuning by means of an output grating to give angular tuning, out-of-plane. While this architecture might work for certain static communication links, it would be difficult to implement for moving platforms. Other approaches have required N2 controls for an NxN element phased array, which leads to complexity. Hence, in this work we demonstrate steering using the thermo-optic effect for both dimensions with a simplified steering mechanism requiring only two control signals, one for each steering dimension.

  5. Viability study of porous silicon photonic mirrors as secondary reflectors for solar concentration systems

    Energy Technology Data Exchange (ETDEWEB)

    de la Mora, M.B.; Jaramillo, O.A.; Nava, R.; Tagueena-Martinez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, A. P. 34, 62580 Temixco, Morelos (Mexico); del Rio, J.A. [Centro Morelense de Innovacion y Transferencia Tecnologica, CCyTEM Camino Temixco a Emiliano Zapata, Km 0.3, Colonia Emiliano Zapata, 62760 Morelos (Mexico)

    2009-08-15

    In this paper we report the viability of using porous silicon photonic mirrors (PSPM) as secondary reflectors in solar concentration systems. The PSPM were fabricated with nanostructured porous silicon to reflect light from the visible range to the near infrared region (500-2500 nm), although this range could be tuned for specific wavelength applications. Our PSPM are multilayers of two alternated refractive indexes (1.5 and 2.0), where the condition of a quarter wavelength in the optical path was imposed. The PSPM were exposed to high radiation in a solar concentrator equipment. As a result, we observed a significant degradation of the mirrors at an approximated temperature of 900 C. In order to analyze the origin of the degradation of PSPM, we model the samples with a non-linear optical approach and study the effect of a temperature increase. Those theoretical and experimental studies allow us to conclude that the main phenomenon involved in the breakdown of the photonic mirrors is of thermal origin, produced by heterogeneous expansion of each layer. Our next step was to introduce a cooling system into the solar concentrator to keep the mirrors at approximately 70 C, with very good results. As a conclusion we propose the use of PSPM as selective secondary mirrors in solar concentration devices using temperature control to avoid thermal degradation. (author)

  6. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

    Science.gov (United States)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

    2017-02-01

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light-matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW-1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10-90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater.

  7. Multiplexed cancer biomarker detection using chip-integrated silicon photonic sensor arrays.

    Science.gov (United States)

    Washburn, Adam L; Shia, Winnie W; Lenkeit, Kimberly A; Lee, So-Hyun; Bailey, Ryan C

    2016-09-21

    The analysis of disease-specific biomarker panels holds promise for the early detection of a range of diseases, including cancer. Blood-based biomarkers, in particular, are attractive targets for minimally-invasive disease diagnosis. Specifically, a panel of organ-specific biomarkers could find utility as a general disease surveillance tool enabling earlier detection or prognostic monitoring. Using arrays of chip-integrated silicon photonic sensors, we describe the simultaneous detection of eight cancer biomarkers in serum in a relatively rapid (1 hour) and fully automated antibody-based sandwich assay. Biomarkers were chosen for their applicability to a range of organ-specific cancers, including disease of the pancreas, liver, ovary, breast, lung, colorectum, and prostate. Importantly, we demonstrate that selected patient samples reveal biomarker "fingerprints" that may be useful for a personalized cancer diagnosis. More generally, we show that the silicon photonic technology is capable of measuring multiplexed panels of protein biomarkers that may have broad utility in clinical diagnostics.

  8. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

    Science.gov (United States)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

    2017-01-01

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light–matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW−1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10–90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater. PMID:28181531

  9. Silicon-nitride photonic circuits interfaced with monolayer MoS{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Guohua [Applied Physics Program, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States); Stanev, Teodor K. [Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States); Czaplewski, David A.; Jung, Il Woong [Center for Nanoscale Materials, Argonne National Laboratory, 9700 S Cass Avenue, Argonne, Illinois 60439 (United States); Stern, Nathaniel P., E-mail: n-stern@northwestern.edu [Applied Physics Program, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States); Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 (United States)

    2015-08-31

    We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

  10. Silicon-photonics light source realized by III-V/Si grating-mirror laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    A III–V/Si vertical-cavity in-plane-emitting laser structure is suggested and numerically investigated. This hybrid laser consists of a distributed Bragg reflector, a III–V active region, and a high-index-contrast grating HCG connected to an in-plane output waveguide. The HCG and the output...... waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared...

  11. Far-field and near-field investigation of plasmonic-photonic hybrid laser mode

    CERN Document Server

    Zhang, Taiping; Callard, Ségolène; jamois, Cecile; Letartre, Xavier; Chevalier, Celine; Rojo-Romeo, Pedro; Devif, Brice; Viktorovitch, Pierre

    2014-01-01

    We report an approach to achieve this goal via build a plasmonic-dielectric photonic hybrid system. We induce a defect mode based photonic crystal (PC) cavity to work as a intermedium storage as well as a near-field light source to excite a plasmonic nanoantenna (NA). In this way, a plasmonic-photonic nano-laser source is created in present experiment. The coupling condition between the two elements is investigated in far-field and near-field level. We found that the NA reduces the Q-factor of the PC-cavity. Meanwhile, the NA concentrates and enhances the laser emission of the PC-cavity. This novel hybrid dielectric-plasmonic structure may open a new avenue in the generation of nano-light sources, which can be applied in areas such as optical information storage, non-linear optics, optical trapping and detection, integrated optics, etc.

  12. Hybrid integration of III-V and silicon materials and devices

    Science.gov (United States)

    Luo, Zhongsheng

    Laser liftoff (LLO) based hybrid integration techniques including the double-transfer process and the pixel-to-point transfer process have been developed to integrate III-V photonics with silicon materials and circuitry. No degradation in the device performance has been observed using the LLO based transfer techniques. On the contrary, performance improvements in both electrical characteristics and electroluminescence (EL) output have been found for the (In,Ga)N light emitting diodes (LEDs) transferred onto Si substrate. Based on computer simulation, it is found that as much as 70% enhancement in EL output could be expected by optimizing the metal layering on the backside of the transferred LEDs. In order to understand the existing experimental data and improve controllability and damage-free transfer yield of the LLO process, a novel, comprehensive LLO model based on thermal-mechanical analysis has been proposed and developed. The LLO model has been validated in the well-studied GaN/sapphire system. By employing the LLO based transfer technique, two optoelectronic systems have been designed and demonstrated. The first one is an integrated fluorescence microsystem, which involved the integration of Cd(S,Se) bandgap filters, (In,Ga)N LEDs, Poly(dimethylsiloxane) (PDMS) microfluidic channels with a pre-fabricated Si PIN photodiode chip. Prototypes with both one color (blue LED) excitation and two-color (blue and green LED) excitation have consistently demonstrated a detection capability of as low as 1 nM fluosphere beads using Molecular Probes FluoSpheresRTM dye. Furthermore, the feasibility of multi-wavelength design has been verified using the bi-wavelength prototype. To optimize signal-to-noise ratio and detection sensitivity of the microsystem via system design, an in-depth mathematic analysis has also been performed. The second application is a zero-footprint optical metrology wafer, which relies on the reflection at the optical detection window, through which

  13. Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Sungho, E-mail: shwoo@dgist.ac.kr [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Hoon Jeong, Jae [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kun Lyu, Hong; Jeong, Seonju; Hyoung Sim, Jun; Hyun Kim, Wook [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Soo Han, Yoon [Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongbuk 712-702 (Korea, Republic of); Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

    2012-08-01

    Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-electrochemical redox reaction. This investigation shows that the photocurrent-to-voltage characteristics of the n-Si NW/PEDOT:PSS cells clearly exhibit a stable rectifying diode behavior. The increase in current density and fill factor using high conductive silicon is attributed to an improved charge transport towards the electrodes achieved by lowering the device's series resistance. Our results also show that the surface area of the nanowire that can form heterojunction domains significantly influences the device performance.

  14. Chip-integrated plasmonic Schottky photodetection based on hybrid silicon waveguides

    Science.gov (United States)

    Lu, Hua; Gu, Min

    2017-03-01

    We numerically and theoretically investigate the plasmonic Schottky photodetection in a novel hybrid silicon-on-insulator waveguide system, which consists of the silicon waveguides and detection area with the metal stripes and doped silicon film on the silicon dioxide substrate. The results illustrate that the fundamental TE mode in the silicon waveguide can be effectively coupled into the metal/silicon waveguide with the excitation of surface plasmon polaritons (SPPs). The coupling is suppressed for the TM mode due to the mismatch between the electric field distributions of the TM and SPP modes. It is found that the coupling efficiency from the TE to SPP mode is dependent on the width and height of the silicon waveguide and can significantly approach 36.1%. The ultracompact configuration yields a high responsivity of 21.7 mA/W and low dark current of 0.45 μA for the photodetection at the communication wavelength. The plasmonic Schottky photodetector could find favorable applications in the chip-integrated optical interconnects and signal processing.

  15. Photonic Routing Systems Using All-optical, Hybrid Integrated Wavelength Converter Arrays

    Directory of Open Access Journals (Sweden)

    Leontios Stampoulidis

    2010-02-01

    Full Text Available The integration of a new generation of all-optical wavelength converters within European project ISTMUFINS has enabled the development of compact and multi-functional photonic processing systems. Here we present the realization of demanding functionalities required in high-capacity photonic routers using these highly integrated components including: Clock recovery, data/label recovery, wavelength routing and contention resolution; all implemented with multi-signal processing using a single photonic chip – a quadruple array of SOAMZI wavelength converters which occupies a chip area of only 15 x 58 mm2. In addition, we present the capability of the technology to build WDM signal processing systems with the simultaneous operation of four quad devices in a four wavelength burst-mode regenerator. Finally, the potential of the technology to provide photonic systems-onchip is demonstrated with the first hybrid integrated alloptical burst-mode receiver prototype.

  16. Reflectivity calculated for a 3D silicon photonic band gap crystal with finite support

    CERN Document Server

    Devashish, D; van der Vegt, J J W; Vos, Willem L

    2016-01-01

    We study numerically the reflectivity of three-dimensional (3D) photonic crystals with a complete 3D photonic band gap, with the aim to interpret recent experiments. We employ the finite element method to study crystals with the cubic diamond-like inverse woodpile structure. The high-index backbone has a dielectric function similar to silicon. We study crystals with a range of thicknesses up to ten unit cells ($L \\leq 10 c$). The crystals are surrounded by vacuum, and have a finite support as in experiments. The polarization-resolved reflectivity spectra reveal Fabry-P{\\'e}rot fringes related to standing waves in the finite crystal, as well as broad stop bands with nearly $100~\\%$ reflectivity, even for thin crystals. From the strong reflectivity peaks, it is inferred that the maximum reflectivity observed in experiments is not limited by finite size. The frequency ranges of the stop bands are in excellent agreement with stop gaps in the photonic band structure, that pertain to infinite and perfect crystals. ...

  17. Theory of pulsed four-wave mixing in one-dimensional silicon photonic crystal slab waveguides

    Science.gov (United States)

    Lavdas, Spyros; Panoiu, Nicolae C.

    2016-03-01

    We present a comprehensive theoretical analysis and computational study of four-wave mixing (FWM) of optical pulses co-propagating in one-dimensional silicon photonic crystal waveguides (Si-PhCWGs). Our theoretical analysis describes a very general setup of the interacting optical pulses, namely we consider nondegenerate FWM in a configuration in which at each frequency there exists a superposition of guiding modes. We incorporate in our theoretical model all relevant linear optical effects, including waveguide loss, free-carrier (FC) dispersion and FC absorption, nonlinear optical effects such as self- and cross-phase modulation (SPM, XPM), two-photon absorption (TPA), and cross-absorption modulation (XAM), as well as the coupled dynamics of free-carriers FCs and optical field. In particular, our theoretical analysis based on the coupled-mode theory provides rigorously derived formulas for linear dispersion coefficients of the guiding modes, linear coupling coefficients between these modes, as well as the nonlinear waveguide coefficients describing SPM, XPM, TPA, XAM, and FWM. In addition, our theoretical analysis and numerical simulations reveal key differences between the characteristics of FWM in the slow- and fast-light regimes, which could potentially have important implications to the design of ultracompact active photonic devices.

  18. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Directory of Open Access Journals (Sweden)

    Shouleh Nikzad

    2016-06-01

    Full Text Available Ultraviolet (UV studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  19. Wideband dynamic microwave frequency identification system using a low-power ultracompact silicon photonic chip

    Science.gov (United States)

    Burla, Maurizio; Wang, Xu; Li, Ming; Chrostowski, Lukas; Azaña, José

    2016-09-01

    Photonic-based instantaneous frequency measurement (IFM) of unknown microwave signals offers improved flexibility and frequency range as compared with electronic solutions. However, no photonic platform has ever demonstrated the key capability to perform dynamic IFM, as required in real-world applications. In addition, all demonstrations to date employ bulky components or need high optical power for operation. Here we demonstrate an integrated photonic IFM system that can identify frequency-varying signals in a dynamic manner, without any need for fast measurement instrumentation. The system is based on a fully linear, ultracompact system based on a waveguide Bragg grating on silicon, only 65-μm long and operating up to ~30 GHz with carrier power below 10 mW, significantly outperforming present technologies. These results open a solid path towards identification of dynamically changing signals over tens of GHz bandwidths using a practical, low-cost on-chip implementation for applications from broadband communications to biomedical, astronomy and more.

  20. Design of integrated hybrid silicon waveguide optical gyroscope.

    Science.gov (United States)

    Srinivasan, Sudharsanan; Moreira, Renan; Blumenthal, Daniel; Bowers, John E

    2014-10-20

    We propose and analyze a novel highly integrated optical gyroscope using low loss silicon nitride waveguides. By integrating the active optical components on chip, we show the possibility of reaching a detection limit on the order of 19°/hr/√Hz in an area smaller than 10 cm(2). This study examines a number of parameters, including the dependence of sensitivity on sensor area.

  1. Simulation results for PLATO: a prototype hybrid X-ray photon counting detector with a low energy threshold for fusion plasma diagnostics

    Science.gov (United States)

    Habib, A.; Menouni, M.; Pangaud, P.; Fenzi, C.; Colledani, G.; Moureau, G.; Escarguel, A.; Morel, C.

    2017-01-01

    PLATO is a prototype hybrid X-ray photon counting detector that has been designed to meet the specifications for plasma diagnostics for the WEST tokamak platform (Tungsten (W) Environment in Steady-state Tokamak) in southern France, with potential perspectives for ITER. PLATO represents a customized solution that fulfills high sensitivity, low dispersion and high photon counting rate. The PLATO prototype matrix is composed of 16 × 18 pixels with a 70 μm pixel pitch. New techniques have been used in analog sensitive blocks to minimize noise coupling through supply rails and substrate, and to suppress threshold dispersion across the matrix. The PLATO ASIC is designed in CMOS 0.13 μm technology and was submitted for a fabrication run in June 2016. The chip is designed to be bump-bonded to a silicon sensor. This paper presents pixel architecture as well as simulation results while highlighting novel solutions.

  2. Faraday effect in hybrid magneto-plasmonic photonic crystals.

    Science.gov (United States)

    Caballero, B; García-Martín, A; Cuevas, J C

    2015-08-24

    We present a theoretical study of the Faraday effect in hybrid magneto-plasmonic crystals that consist of Au-Co-Au perforated membranes with a periodic array of sub-wavelength holes. We show that in these hybrid systems the interplay between the extraordinary optical transmission and the magneto-optical activity leads to a resonant enhancement of the Faraday rotation, as compared to purely ferromagnetic membranes. In particular, we determine the geometrical parameters for which this enhancement is optimized and show that the inclusion of a noble metal like Au dramatically increases the Faraday rotation over a broad bandwidth. Moreover, we show that the analysis of the Faraday rotation in these periodically perforated membranes provides a further insight into the origin of the extraordinary optical transmission.

  3. Modelling of an ultra-thin silicatene/silicon-carbide hybrid film

    Science.gov (United States)

    Schlexer, Philomena; Pacchioni, Gianfranco

    2016-09-01

    Recently, a well-ordered silicatene/silicon-carbide hybrid thin-film supported on Ru(0 0 0 1) has been reported (2015 Surf. Sci. 632 9-13). The thin-film consist of a monolayer of corner sharing (SiO4)-tetrahedra on top of a (Si2C3) monolayer supported on the Ru(0 0 0 1) surface. This silicatene/silicon-carbide hybrid system may exhibit interesting properties for nano-technological applications and represents another example of a 2D material. We explore the physical and chemical properties of the silicatene/silicon-carbide thin-film using DFT and compare the vibrational spectra with existing experimental data. The characteristics of the silicatene/silicon-carbide hybrid system are compared with those of the bilayer-silicatene (pure SiO2 film). We found large differences in the adsorption modes of the two thin-films on the Ru(0 0 0 1) support. Whereas the bilayer-silicatene physisorbs on the Ru(0 0 0 1) surface, the silicatene/silicon-carbide layer binds via chemisorption. The chemical properties of the two thin-films were probed by adsorption of H atoms at various positions, as well as by Al-doping and the formation of hydroxyl groups (Al-OH). These results show that despite the similar structure of the top layer and the identical metal support (Ru), the mixed silicatene/silicon-carbide system behaves quite differently from the pure silica two-layer counterpart.

  4. Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities

    OpenAIRE

    Azzini, Stefano; Grassani, Davide; Galli, Matteo; Gerace,Dario; Patrini, Maddalena; Liscidini, Marco; Velha, Philippe; Bajoni, Daniele

    2013-01-01

    We report on four-wave mixing in coupled photonic crystal nano-cavities on a silicon-on-insulator platform. Three photonic wire cavities are side-coupled to obtain three modes equally separated in energy. The structure is designed to be self-filtering, and we show that the pump is rejected by almost two orders of magnitudes. We study both the stimulated and the spontaneous four-wave mixing processes: owing to the small modal volume, we find that signal and idler photons are generated with a h...

  5. Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities

    OpenAIRE

    Azzini, Stefano; Grassani, Davide; Galli, Matteo; Gerace, Dario; Patrini, Maddalena; Liscidini, Marco; Velha, Philippe; Bajoni, Daniele

    2013-01-01

    We report on four-wave mixing in coupled photonic crystal nano-cavities on a silicon-on-insulator platform. Three photonic wire cavities are side-coupled to obtain three modes equally separated in energy. The structure is designed to be self-filtering, and we show that the pump is rejected by almost two orders of magnitudes. We study both the stimulated and the spontaneous four-wave mixing processes: owing to the small modal volume, we find that signal and idler photons are generated with a h...

  6. Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

    Science.gov (United States)

    Driscoll, Jeffrey B.

    Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

  7. Universal quantum gates for photon-atom hybrid systems assisted by bad cavities.

    Science.gov (United States)

    Wang, Guan-Yu; Liu, Qian; Wei, Hai-Rui; Li, Tao; Ai, Qing; Deng, Fu-Guo

    2016-01-01

    We present two deterministic schemes for constructing a CNOT gate and a Toffoli gate on photon-atom and photon-atom-atom hybrid quantum systems assisted by bad cavities, respectively. They are achieved by cavity-assisted photon scattering and work in the intermediate coupling region with bad cavities, which relaxes the difficulty of their implementation in experiment. Also, bad cavities are feasible for fast quantum operations and reading out information. Compared with previous works, our schemes do not need any auxiliary qubits and measurements. Moreover, the schematic setups for these gates are simple, especially that for our Toffoli gate as only a quarter wave packet is used to interact the photon with each of the atoms every time. These atom-cavity systems can be used as the quantum nodes in long-distance quantum communication as their relatively long coherence time is suitable for multi-time operations between the photon and the system. Our calculations show that the average fidelities and efficiencies of our two universal hybrid quantum gates are high with current experimental technology.

  8. A Two-Dimensional Photonic Crystal Slab Mirror with Silicon on Insulator for Wavelength 1.3μm

    Institute of Scientific and Technical Information of China (English)

    TANG Hai-Xia; ZUO Yu-Hua; YU Jin-Zhong; WANG Qi-Ming

    2006-01-01

    @@ A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3μm with a silicon-on-insulator (SOI) substrate is designed by the three-dimensional plane wave expansion method.

  9. Modal theory of modified spontaneous emission for a hybrid plasmonic photonic-crystal cavity system

    CERN Document Server

    Dezfouli, Mohsen Kamandar; Hughes, Stephen

    2016-01-01

    We present an analytical modal description of the rich physics involved in hybrid plasmonic-photonic devices that is confirmed by full dipole solutions of Maxwell's equations. Strong frequency-dependence for the spontaneous emission decay rate of a quantum dipole emitter coupled to these hybrid structures is predicted. In particular, it is shown that the Fano-type resonances reported experimentally in hybrid plasmonic systems, arise from a very large interference between dominant quasinormal modes of the systems in the frequency range of interest. The presented model forms an efficient basis for modelling quantum light-matter interactions in these complex hybrid systems and also enables the quantitativ prediction and understanding of non-radiative coupling losses.

  10. All-fiber hybrid photon-plasmon circuits: integrating nanowire plasmonics with fiber optics.

    Science.gov (United States)

    Li, Xiyuan; Li, Wei; Guo, Xin; Lou, Jingyi; Tong, Limin

    2013-07-01

    We demonstrate all-fiber hybrid photon-plasmon circuits by integrating Ag nanowires with optical fibers. Relying on near-field coupling, we realize a photon-to-plasmon conversion efficiency up to 92% in a fiber-based nanowire plasmonic probe. Around optical communication band, we assemble an all-fiber resonator and a Mach-Zehnder interferometer (MZI) with Q-factor of 6 × 10(6) and extinction ratio up to 30 dB, respectively. Using the MZI, we demonstrate fiber-compatible plasmonic sensing with high sensitivity and low optical power.

  11. 40-Gb/s all-optical processing systems using hybrid photonic integration technology

    DEFF Research Database (Denmark)

    Kehayas, E.; Tsiokos, D.I.; Bakopoulos, P.;

    2006-01-01

    This paper presents an experimental performance characterization of all-optical subsystems at 40 Gb/s using interconnected hybrid integrated all-optical semiconductor optical amplifier (SOA) Mach-Zehnder interferometer (MZI) gates and flip-flop prototypes. It was shown that optical gates can...... the potential that all-optical technology can find application in future data-centric networks with efficient and dynamic bandwidth utilization. This paper also reports on the latest photonic integration breakthroughs as a potential migration path for reducing fabrication cost by developing photonic systems...

  12. Optical and thermal properties of periodic photonic structures on a silicon-on-insulator platform

    Science.gov (United States)

    Song, Weiwei

    Silicon photonics is the leading candidate to fulfill the high bandwidth requirement for the future communication networks. Periodic photonic structures, due to their fascinating properties including compact size, high efficiency, and ease of design, play an important role in photonic systems. In this dissertation, SOI-based one-dimensional and two-dimensional periodic photonic structures are studied. Low crosstalk, high density integration of bus waveguides is demonstrated by employing a novel waveguide array structure. Inspired by the low coupling strength shown by initial pair waveguide experiments, novel waveguide array structures are studied by generalizing the nearest-neighbor tight-bonding model. Based on the theory, waveguide arrays have been designed and fabricated. The waveguide arrays have been characterized to demonstrate high density bus waveguides with minimal crosstalk. Two-dimensional photonic crystal waveguide (PCW) structure was then investigated aiming at reducing the propagation loss. A general cross-sectional eigenmode orthogonality relation is first derived for a one dimensional periodic system. Assisted by this orthogonality, analytic formulas are obtained to describe the propagation loss in PCW structures. By introducing the radiation and backscattering loss factors alpha1 and alpha2, the total loss coefficient alpha can be written as alpha = alpha1ng + alpha2ng2 ( ng is the group index). It is analytically shown the backscattering loss generally dominates the radiation loss for ng>10. Combined with systematic simulations of loss dependences on key structure parameters, this analytic study helps identify promising strategies to reduce the slow light loss. The influence of the substrate on the performance of a thermo-optic tuning photonic crystal device was studied in the following section. The substrate-induced thermo-optic tuning is obtained as a function of key physical parameters, based on a semi-analytic theory that agrees well with

  13. Optical manipulation of a magnon-photon hybrid system

    CERN Document Server

    Braggio, C; Guarise, M; Ortolan, A; Ruoso, G

    2016-01-01

    We demonstrate an all-optical method for manipulating the magnetization in a 1-mm YIG (yttrium-iron-garnet) sphere placed in a $\\sim0.17\\,$T uniform magnetic field. An harmonic of the frequency comb delivered by a multi-GHz infrared laser source is tuned to the Larmor frequency of the YIG sphere to drive magnetization oscillations, which in turn give rise to a radiation field used to thoroughly investigate the phenomenon. The radiation damping issue that occurs at high frequency and in the presence of highly magnetizated materials, has been overcome by exploiting magnon-photon strong coupling regime in microwave cavities. Our findings demonstrate an effective technique for ultrafast control of the magnetization vector in optomagnetic materials via polarization rotation and intensity modulation of an incident laser beam. We eventually get a second-order susceptibility value of $\\sim10^{-7}$ cm$^2$/MW for single crystal YIG.

  14. Integration of self-assembled three-dimensional photonic crystals onto structured silicon wafers.

    Science.gov (United States)

    Ye, Jianhui; Zentel, Rudolf; Arpiainen, Sanna; Ahopelto, Jouni; Jonsson, Fredrik; Romanov, Sergei G; Sotomayor Torres, Clivia M

    2006-08-15

    We report on the fabrication of high-quality opaline photonic crystals from large silica spheres (diameter of 890 nm), self-assembled in hydrophilic trenches of silicon wafers by using a novel technique coined a combination of "lifting and stirring". The achievements reported here comprise a spatial selectivity of opal crystallization without special treatment of the wafer surface, a filling of the trenches up to the top, leading to a spatially uniform film thickness, particularly an absence of cracks within the size of the trenches, and finally a good 3D order of the opal lattice even in trenches with a complex confined geometry, verified using optical measurements. The opal lattice was found to match the pattern precisely in width as well as depth, providing an important step toward applications of opals in integrated optics.

  15. High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

    Science.gov (United States)

    Tian, Y.; Shimazoe, K.; Yan, X.; Ueda, O.; Ishikura, T.; Fujiwara, T.; Uesaka, M.; Ohno, M.; Tomita, H.; Yoshihara, Y.; Takahashi, H.

    2016-09-01

    A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

  16. Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Hai, E-mail: hai.yan@utexas.edu; Zou, Yi; Yang, Chun-Ju [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Chakravarty, Swapnajit, E-mail: swapnajit.chakravarty@omegaoptics.com [Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Wang, Zheng [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Tang, Naimei; Chen, Ray T., E-mail: raychen@uts.cc.utexas.edu [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Fan, Donglei [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-03-23

    A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.

  17. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Science.gov (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  18. Properties of localization in silicon-based lattice periodicity breaking photonic crystal waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yuquan; Wang, Xiaofei; Wang, Yufang; Zhang, Guoquan; Fan, Wande; Cao, Xuewei, E-mail: xwcao@nankai.edu.cn [School of Physics, Nankai University, Tianjin, 300071 (China); Wu, Yuanbin [School of Physics, Nankai University, Tianjin, 300071 (China); Dip. di Fisica, Università di Roma “La Sapienza”, Piazzale Aldo Moro 5, I-00185 Roma (Italy); EDSFA, Université de Nice Sophia Antipolis, 06103 Nice (France)

    2013-11-15

    The light localization effects in silicon photonic crystal cavities at different disorder degrees have been studied using the finite difference time domain (FDTD) method in this paper. Numerical results showed that localization occurs and enhancement can be gained in the region of the cavity under certain conditions. The stabilities of the localization effects due to the structural perturbations have been investigated too. Detailed studies showed that when the degree of structural disorder is small(about 10%), the localization effects are stable, the maximum enhancement factor can reach 16.5 for incident wavelength of 785 nm and 23 for 850 nm in the cavity, with the degree of disorder about 8%. The equivalent diameter of the localized spot is almost constant at different disorder degrees, approximating to λ/7, which turned out to be independent on the structural perturbation.

  19. Four-wave mixing in slow light engineered silicon photonic crystal waveguides.

    Science.gov (United States)

    Monat, C; Ebnali-Heidari, M; Grillet, C; Corcoran, B; Eggleton, B J; White, T P; O'Faolain, L; Li, J; Krauss, T F

    2010-10-25

    We experimentally investigate four-wave mixing (FWM) in short (80 μm) dispersion-engineered slow light silicon photonic crystal waveguides. The pump, probe and idler signals all lie in a 14 nm wide low dispersion region with a near-constant group velocity of c/30. We measure an instantaneous conversion efficiency of up to -9dB between the idler and the continuous-wave probe, with 1W peak pump power and 6 nm pump-probe detuning. This conversion efficiency is found to be considerably higher (>10 × ) than that of a Si nanowire with a group velocity ten times larger. In addition, we estimate the FWM bandwidth to be at least that of the flat band slow light window. These results, supported by numerical simulations, emphasize the importance of engineering the dispersion of PhC waveguides to exploit the slow light enhancement of FWM efficiency, even for short device lengths.

  20. High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Y., E-mail: cycjty@sophie.q.t.u-tokyo.ac.jp [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Shimazoe, K.; Yan, X. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Ueda, O.; Ishikura, T. [Fuji Electric Co., Ltd., Fuji, Hino, Tokyo 191-8502 (Japan); Fujiwara, T. [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Uesaka, M.; Ohno, M. [Nuclear Professional School, the University of Tokyo, 2-22 Shirakata-shirane, Tokai, Ibaraki 319-1188 (Japan); Tomita, H. [Department of Quantum Engineering, Nagoya University, Furo, Chikusa, Nagoya 464-8603 (Japan); Yoshihara, Y. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Takahashi, H. [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-09-11

    A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

  1. One-way optical transmission in silicon photonic crystal heterojunction with circular and square scatterers

    Science.gov (United States)

    Liu, Dan; Hu, Sen; Gao, Yihua

    2017-07-01

    A 2D orthogonal square-lattice photonic crystal (PC) heterojunction consisting of circular and square air holes in silicon is presented. Band structures are calculated using the plane wave expansion method, and the transmission properties are investigated by the finite-different time-domain simulations. Thanks to the higher diffraction orders excited when the circular and square holes are interlaced along the interface, one-way transmission phenomena can exist within wide frequency regions. The higher order diffraction is further enhanced through two different interface optimization designs proposed by modifying the PC structure of the hetero-interface. An orthogonal PC heterojunction for wide-band and efficient one-way transmission is constructed, and the maximum transmissivity is up to 78%.

  2. Radiation-hard Silicon Photonics for Future High Energy Physics Experiments

    CERN Document Server

    AUTHOR|(CDS)2089774; Troska, Jan

    Collisions of proton beams in the Large Hadron Collider at CERN produce very high radiation levels in the innermost parts of the particle detectors and enormous amounts of measurement data. Thousands of radiation-hard optical links based on directly-modulated laser diodes are thus installed in the particle detectors to transmit the measurement data to the processing electronics. The radiation levels in the innermost regions of future particle detectors will be much higher than they are now. Alternative solutions to laser-based radiation-hard optical links have to be found since the performance of laser diodes decreases beyond the operation margin of the system when irradiated to sufficiently high radiation levels. Silicon Photonics (SiPh) is currently being investigated as a promising alternative technology. First tests have indeed shown that SiPh Mach-Zehnder modulators (MZMs) are relatively insensitive to a high neutron fluence. However, they showed a strong degradation when exposed to ionizing radiation. ...

  3. Nanoscale Biosensor Based on Silicon Photonic Cavity for Home Healthcare Diagnostic Application

    Science.gov (United States)

    Ebrahimy, Mehdi N.; Moghaddam, Aydin B.; Andalib, Alireza; Naziri, Mohammad; Ronagh, Nazli

    2015-09-01

    In this paper, a new ultra-compact optical biosensor based on photonic crystal (phc) resonant cavity is proposed. This sensor has ability to work in chemical optical processes for the determination and analysis of liquid material. Here, we used an optical filter based on two-dimensional phc resonant cavity on a silicon layer and an active area is created in center of cavity. According to results, with increasing the refractive index of cavity, resonant wavelengths shift so that this phenomenon provides the ability to measure the properties of materials. This novel designed biosensor has more advantage to operate in the biochemical process for example sensing protein and DNA molecule refractive index. This nanoscale biosensor has quality factor higher than 1.5 × 104 and it is suitable to be used in the home healthcare diagnostic applications.

  4. Photonic-assisted microwave frequency measurement system based on a silicon ORR

    Science.gov (United States)

    Jiang, Jianfei; Shao, Haifeng; Li, Xia; Li, Yan; Dai, Tingge; Wang, Gencheng; Yang, Jianyi; Jiang, Xiaoqing; Yu, Hui

    2017-01-01

    A photonic-assisted instantaneous microwave frequency measurement (IFM) system is demonstrated with add-drop optical ring resonators (ORRs) on silicon-on-insulator (SOI) platform. By launching a double-sideband suppressed carrier modulated optical signal into the ring, a monotonous amplitude comparison function (ACF) irrespective of the amplitudes of both optical and RF signals is established to translate the RF frequency to the power ratio between the through and drop ports of the ring. Two experiments have been set up with two rings which have different Q values. Two 25 μm radius ORRs with Q values of 3974 and 25833 are used to offer different measurement ranges and accuracies. In the experiments the ORR with low Q value has a large measurement range of 0.5-35 GHz, and the other one with high Q value exhibits a high accuracy of 0.1 GHz in the frequency range of 0.1-5 GHz.

  5. Synthesis and characterization of silicon-based polymers for use as organic/inorganic hybrids and silicon carbide precursors

    Science.gov (United States)

    Sellinger, Alan

    Organic/inorganic hybrids from silsesquioxanes. This Dissertation describes the synthesis and characterization of methacrylate, epoxy and liquid crystalline (LC)-containing organic/inorganic hybrid materials based on silsesquioxanes. While the methacrylate and epoxy groups provide polymerizable moieties to the hybrids, the LC component is anticipated to provide toughness, and oxidative stability as well as minimize shrinkage during curing. The inorganic silsesquioxane portion, ((RSiOsb{1.5})sb8, cubes), which closely resembles specific crystalline forms of silica and zeolites, may be covalently linked to a variety of organic functional groups. As a result, single-phase organic/inorganic hybrids are formed that when polymerized mimic silica-reinforced composites. The resultant hybrids are liquids at room temperature, and hence allow for single-phase composite processing, ideal for abrasion-resistant coatings and filling molds, as in dental restorative applications. The reactions are based on inexpensive starting materials, have high yields (>80%), and form soluble products containing up to 65% masked silica. The hybrids were characterized using NMR spectroscopy (sp1H,\\ sp{13}C,\\ sp{29}Si), FTIR, size exclusion chromatography (SEC), and thermal analysis (TGA, DSC). A modified polymethylsilane as a precursor of silicon carbide. It is generally known that polymer precursor routes to silicon carbide (SiC) are very important in the processing of SiC fibers and high performance SiC parts with specific shapes. It is further known that commercial SiC precursor polymers are often not resistant to oxidation, and are based on monomers rich in carbon. As a result of this, their pyrolysis yields SiC rich in oxygen and carbon, a feature which drastically reduces the final materials' ultimate properties (high temperature resistance, tensile strength, modulus). To remedy this, we describe in this work the synthesis and characterization of a modified polymethylsilane (mPMS) which

  6. Energy correlations of photon pairs generated by a silicon microring resonator probed by Stimulated Four Wave Mixing.

    Science.gov (United States)

    Grassani, Davide; Simbula, Angelica; Pirotta, Stefano; Galli, Matteo; Menotti, Matteo; Harris, Nicholas C; Baehr-Jones, Tom; Hochberg, Michael; Galland, Christophe; Liscidini, Marco; Bajoni, Daniele

    2016-04-01

    Compact silicon integrated devices, such as micro-ring resonators, have recently been demonstrated as efficient sources of quantum correlated photon pairs. The mass production of integrated devices demands the implementation of fast and reliable techniques to monitor the device performances. In the case of time-energy correlations, this is particularly challenging, as it requires high spectral resolution that is not currently achievable in coincidence measurements. Here we reconstruct the joint spectral density of photons pairs generated by spontaneous four-wave mixing in a silicon ring resonator by studying the corresponding stimulated process, namely stimulated four wave mixing. We show that this approach, featuring high spectral resolution and short measurement times, allows one to discriminate between nearly-uncorrelated and highly-correlated photon pairs.

  7. Energy correlations of photon pairs generated by a silicon microring resonator probed by Stimulated Four Wave Mixing

    CERN Document Server

    Grassani, Davide; Pirotta, Stefano; Galli, Matteo; Menotti, Matteo; Harris, Nicholas C; Baehr-Jones, Tom; Hochberg, Michael; Galland, Christophe; Liscidini, Marco; Bajoni, Daniele

    2016-01-01

    Compact silicon integrated devices, such as micro-ring resonators, have recently been demonstrated as efficient sources of quantum correlated photon pairs. The mass production of integrated devices demands the implementation of fast and reliable techniques to monitor the device performances. In the case of time-energy correlations, this is particularly challenging, as it requires high spectral resolution that is not currently achievable in coincidence measurements. Here we reconstruct the joint spectral density of photons pairs generated by spontaneous four-wave mixing in a silicon ring resonator by studying the corresponding stimulated process, namely stimulated four wave mixing. We show that this approach, featuring high spectral resolution and short measurement times, allows one to discriminate between nearly-uncorrelated and highly-correlated photon pairs.

  8. Hybrid silicon plasmonic organic directional coupler-based modulator

    Science.gov (United States)

    Abdelatty, M. Y.; Zaki, A. O.; Swillam, M. A.

    2017-01-01

    An optical directional coupler (ODC)-based hybrid plasmonic waveguide is designed and demonstrated with a power splitting mechanism that can be tuned by applying an external electric field. The tuning mechanism takes the advantage of electro-optic properties of the embedded polymer layer. The ODC operates under 1550 nm telecommunication wavelength. A finite element method with a perfect matching layer, absorbing boundary condition, is taken up to simulate and analyze the ODC.

  9. Structural and electronic properties of hybrid silicon-germanium nanosheets

    Directory of Open Access Journals (Sweden)

    F. L. Pérez Sánchez

    2014-12-01

    Full Text Available Using first principles molecular calculations, based on the Density Functional Theory (DFT, structural and electronic properties of hybrid graphene—like silicon—germanium circular nanosheets of hexagonal symmetry are investigated. The exchange—correlation functional of Perdew—Wang (PW in the local spin density approximation (LSDA based on the pseudopotentials of Dolg—Bergnre is applied. The finite extension nanosheets are represented by the CnHm—like cluster model with mono—hydrogenated armchair edges. Changes of the physicochemical properties were analyzed to learn on the chemical composition. We have obtained that the corrugation of the hybrid nanosheets is maintained (with respect to the pristine nanosheets of Ge and Si and is more pronounced when there is a high percentage of germanium. Moreover, hybrid nanosheets have ionic bonds (polarity in the interval from 0.18 to 0.77 D and exhibit a semimetal behavior. Three types of chemical compositions are considered: 1 the one—one relationship, 2 formation of Ge dimers and 3 formation of Ge hexagons. In each case it is observed an increase in the chemical reactivity. Finally, analyzing the work function we conclude that in cases 1 and 2 the chemical compositions improve the efficiency of the field emission and thereby they could expand the scope of nanotechnology applications.

  10. Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles.

    Science.gov (United States)

    Liu, Kong; Qu, Shengchun; Zhang, Xinhui; Tan, Furui; Wang, Zhanguo

    2013-02-18

    Silicon nanowire (SiNW) arrays show an excellent light-trapping characteristic and high mobility for carriers. Surface plasmon resonance of silver nanoparticles (AgNPs) can be used to increase light scattering and absorption in solar cells. We fabricated a new kind of SiNW/organic hybrid solar cell by introducing AgNPs. Reflection spectra confirm the improved light scattering of AgNP-decorated SiNW arrays. A double-junction tandem structure was designed to manufacture our hybrid cells. Both short-circuit current and external quantum efficiency measurements show an enhancement in optical absorption of organic layer, especially at lower wavelengths.

  11. Thermo-tunable hybrid photonic crystal fiber based on solution-processed chalcogenide glass nanolayers

    DEFF Research Database (Denmark)

    Markos, Christos

    2016-01-01

    The possibility to combine silica photonic crystal fiber (PCF) as low-loss platform with advanced functional materials, offers an enormous range of choices for the development of fiber-based tunable devices. Here, we report a tunable hybrid silica PCF with integrated As2S3 glass nanolayers inside...... antiresonances by taking advantage the high thermo-optic coefficient of the solution-processed nanolayers. Two different hybrid fiber structures, with core diameter 10 and 5 mu m, were developed and characterized using a supercontinuum source. The maximum sensitivity was measured to be as high as 3.6 nm...

  12. Light-trapping optimization in wet-etched silicon photonic crystal solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eyderman, Sergey, E-mail: sergey.eyderman@utoronto.ca [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); John, Sajeev [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Hafez, M.; Al-Ameer, S. S.; Al-Harby, T. S.; Al-Hadeethi, Y. [Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Bouwes, D. M. [iX-factory GmbH, Konrad Adenauer–Allee 11, 44263 Dortmund (Germany)

    2015-07-14

    We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

  13. 18k Channels single photon counting readout circuit for hybrid pixel detector

    Science.gov (United States)

    Maj, P.; Grybos, P.; Szczygiel, R.; Zoladz, M.; Sakumura, T.; Tsuji, Y.

    2013-01-01

    We have performed measurements of an integrated circuit named PXD18k designed for hybrid pixel semiconductor detectors used in X-ray imaging applications. The PXD18k integrated circuit, fabricated in CMOS 180 nm technology, has dimensions of 9.64 mm×20 mm and contains approximately 26 million transistors. The core of the IC is a matrix of 96×192 pixels with 100 μm×100 μm pixel size. Each pixel works in a single photon counting mode. A single pixel contains two charge sensitive amplifiers with Krummenacher feedback scheme, two shapers, two discriminators (with independent thresholds A and B) and two 16-bit ripple counters. The data are read out via eight low voltage differential signaling (LVDS) outputs with 100 Mbps rate. The power consumption is dominated by analog blocks and it is about 23 μW/pixel. The effective peaking time at the discriminator input is 30 ns and is mainly determined by the time constants of the charge sensitive amplifier (CSA). The gain is equal to 42.5 μV/e- and the equivalent noise charge is 168 e- rms (with bump-bonded silicon pixel detector). Thanks to the use of trim DACs in each pixel, the effective threshold spread at the discriminator input is only 1.79 mV. The dead time of the front end electronics for a standard setting is 172 ns (paralyzable model). In the standard readout mode (when the data collection time is separated from the time necessary to readout data from the chip) the PXD18k IC works with two energy thresholds per pixel. The PXD18k can also be operated in the continuous readout mode (with a zero dead time) where one can select the number of bits readout from each pixel to optimize the PXD18k frame rate. For example, for reading out 16 bits/pixel the frame rate is 2.7 kHz and for 4 bits/pixel it rises to 7.1 kHz.

  14. 18k Channels single photon counting readout circuit for hybrid pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Maj, P., E-mail: piotr.maj@agh.edu.pl [AGH University of Science and Technology, Department of Measurements and Electronics, Al. Mickiewicza 30, 30-059 Krakow (Poland); Grybos, P.; Szczygiel, R.; Zoladz, M. [AGH University of Science and Technology, Department of Measurements and Electronics, Al. Mickiewicza 30, 30-059 Krakow (Poland); Sakumura, T.; Tsuji, Y. [X-ray Analysis Division, Rigaku Corporation, Matsubara, Akishima, Tokyo 196-8666 (Japan)

    2013-01-01

    We have performed measurements of an integrated circuit named PXD18k designed for hybrid pixel semiconductor detectors used in X-ray imaging applications. The PXD18k integrated circuit, fabricated in CMOS 180 nm technology, has dimensions of 9.64 mm Multiplication-Sign 20 mm and contains approximately 26 million transistors. The core of the IC is a matrix of 96 Multiplication-Sign 192 pixels with 100 {mu}m Multiplication-Sign 100 {mu}m pixel size. Each pixel works in a single photon counting mode. A single pixel contains two charge sensitive amplifiers with Krummenacher feedback scheme, two shapers, two discriminators (with independent thresholds A and B) and two 16-bit ripple counters. The data are read out via eight low voltage differential signaling (LVDS) outputs with 100 Mbps rate. The power consumption is dominated by analog blocks and it is about 23 {mu}W/pixel. The effective peaking time at the discriminator input is 30 ns and is mainly determined by the time constants of the charge sensitive amplifier (CSA). The gain is equal to 42.5 {mu}V/e{sup -} and the equivalent noise charge is 168 e{sup -} rms (with bump-bonded silicon pixel detector). Thanks to the use of trim DACs in each pixel, the effective threshold spread at the discriminator input is only 1.79 mV. The dead time of the front end electronics for a standard setting is 172 ns (paralyzable model). In the standard readout mode (when the data collection time is separated from the time necessary to readout data from the chip) the PXD18k IC works with two energy thresholds per pixel. The PXD18k can also be operated in the continuous readout mode (with a zero dead time) where one can select the number of bits readout from each pixel to optimize the PXD18k frame rate. For example, for reading out 16 bits/pixel the frame rate is 2.7 kHz and for 4 bits/pixel it rises to 7.1 kHz.

  15. Polarization rotation and coupling between silicon waveguide and hybrid plasmonic waveguide.

    Science.gov (United States)

    Kim, Sangsik; Qi, Minghao

    2015-04-20

    We present a polarization rotation and coupling scheme that rotates a TE(0) mode in a silicon waveguide and simultaneously couples the rotated mode to a hybrid plasmonic (HP(0)) waveguide mode. Such a polarization rotation can be realized with a partially etched asymmetric hybrid plasmonic waveguide consisting of a silicon strip waveguide, a thin oxide spacer, and a metal cap made from copper, gold, silver or aluminum. Two implementations, one with and one without the tapering of the metal cap are presented, and different taper shapes (linear and exponential) are also analyzed. The devices have large 3 dB conversion bandwidths (over 200 nm at near infrared) and short length (< 5 μm), and achieve a maximum coupling factor of ∼ 78% with a linearly tapered silver metal cap.

  16. Diffusion of interstitial oxygen in silicon and germanium: a hybrid functional study

    Science.gov (United States)

    Colleoni, Davide; Pasquarello, Alfredo

    2016-12-01

    The minimum-energy paths for the diffusion of an interstitial O atom in silicon and germanium are studied through the nudged-elastic-band method and hybrid functional calculations. The reconsideration of the diffusion of O in silicon primarily serves the purpose of validating the procedure for studying the O diffusion in germanium. Our calculations show that the minimum energy path goes through an asymmetric transition state in both silicon and germanium. The stability of these transition states is found to be enhanced by the generation of unpaired electrons in the highest occupied single-particle states. Calculated energy barriers are 2.54 and 2.14 eV for Si and Ge, in very good agreement with corresponding experimental values of 2.53 and 2.08 eV, respectively.

  17. Efficient red emission from europium chelate-silicone host-guest hybrids

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Thanh H.; Bentlage, Michael; Kynast, Ulrich [Muenster Univ. of Applied Sciences, Steinfurt (Germany). Dept. of Chemical Engineering; Lezhnina, Marina M.

    2014-02-15

    Due to their ease of fabrication, chemical stability and optical transparency polydimethylsiloxane-derived silicones ([O-Si(CH{sub 3}){sub 2}]{sub ∞}) are excellent matrices to enable optical functions. We here report on the luminescence of silicone hybrids with red-emitting europium diketonate complexes, which have not been described previously in this matrix. The problem of too low solubility of the pure complexes has been resolved by co-coordination with trioctylphosphine oxide (TOPO), which permits complex concentrations of up to 5 x 10{sup -3} mol L{sup -1}, at the same time maintaining complete transparency. Quantum efficiencies in excess of 60 % could thus be obtained for benzoyltrifluoroacetonates, and near 50 % for thenoyltrifluoroacetonates. These high efficiencies have been confirmed by room-temperature life time measurements, which displayed straight single-exponential decay behavior for both complexes independent of their concentration in the silicone. (orig.)

  18. Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats.

    Science.gov (United States)

    Lauermann, M; Palmer, R; Koeber, S; Schindler, P C; Korn, D; Wahlbrink, T; Bolten, J; Waldow, M; Elder, D L; Dalton, L R; Leuthold, J; Freude, W; Koos, C

    2014-12-01

    We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.

  19. New silicon photonics integration platform enabled by novel micron-scale bends

    CERN Document Server

    Cherchi, Matteo; Harjanne, Mikko; Kapulainen, Markku; Aalto, Timo

    2013-01-01

    Even though submicron silicon waveguides have been proposed for dense integration of photonic devices, to date the lightwave circuits on the market mainly rely on waveguides with micron-scale core dimensions. These larger waveguides feature easier fabrication, higher reliability and better interfacing to optical fibres. Single-mode operation with large core dimensions is obtained with low lateral refractive index contrast. Hence, the main limitation in increasing the level of integration and in reducing the cost of micron-scale waveguide circuits is their mm- to cm-scale minimum bending radius. Fortunately, single-mode rib waveguides with a micron-scale silicon core can be locally transformed into multi-mode strip waveguides that have very high lateral index contrast. Here we show how Euler spiral bends realized with these waveguides can have bending radii below 10 {\\mu}m and losses below 0.02 dB/90{\\deg} for the fundamental mode, paving way for a novel densely integrated platform based on micron-scale wavegu...

  20. Hybrid silicon nanocrystal-organic light-emitting devices for infrared electroluminescence.

    Science.gov (United States)

    Cheng, Kai-Yuan; Anthony, Rebecca; Kortshagen, Uwe R; Holmes, Russell J

    2010-04-14

    We demonstrate hybrid inorganic-organic light-emitting devices with peak electroluminescence (EL) at a wavelength of 868 nm using silicon nanocrystals (SiNCs). An external quantum efficiency of 0.6% is realized in the forward-emitted direction, with emission originating primarily from the SiNCs. Microscopic characterization indicates that complete coverage of the SiNCs on the conjugated polymer hole-transporting layer is required to observe efficient EL.