Neuromorphic photonic networks using silicon photonic weight banks.

Science.gov (United States)

Tait, Alexander N; de Lima, Thomas Ferreira; Zhou, Ellen; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

2017-08-07

Photonic systems for high-performance information processing have attracted renewed interest. Neuromorphic silicon photonics has the potential to integrate processing functions that vastly exceed the capabilities of electronics. We report first observations of a recurrent silicon photonic neural network, in which connections are configured by microring weight banks. A mathematical isomorphism between the silicon photonic circuit and a continuous neural network model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, a simulated 24-node silicon photonic neural network is programmed using "neural compiler" to solve a differential system emulation task. A 294-fold acceleration against a conventional benchmark is predicted. We also propose and derive power consumption analysis for modulator-class neurons that, as opposed to laser-class neurons, are compatible with silicon photonic platforms. At increased scale, Neuromorphic silicon photonics could access new regimes of ultrafast information processing for radio, control, and scientific computing.

Photonic integration and photonics-electronics convergence on silicon platform

CERN Document Server

Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

2015-01-01

Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Silicon Photonics Cloud (SiCloud)

DEFF Research Database (Denmark)

DeVore, P. T. S.; Jiang, Y.; Lynch, M.

2015-01-01

Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

Silicon photonic integration in telecommunications

Directory of Open Access Journals (Sweden)

Christopher Richard Doerr

2015-08-01

Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

Strained Silicon Photonics

Directory of Open Access Journals (Sweden)

Ralf B. Wehrspohn

2012-05-01

Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

Hybrid III-V Silicon Lasers

Science.gov (United States)

Bowers, John

2014-03-01

Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

ePIXfab - The silicon photonics platform

NARCIS (Netherlands)

Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

2013-01-01

ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

Energy Technology Data Exchange (ETDEWEB)

Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

Silicon photonics for telecommunications and biomedicine

CERN Document Server

Fathpour, Sasan

2011-01-01

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

Science.gov (United States)

Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

2015-02-11

The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

Silicon photonics: some remaining challenges

Science.gov (United States)

Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

2016-03-01

This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

International Nuclear Information System (INIS)

Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C.; Koeber, S.; Freude, W.; Koos, C.; Rembe, C.

2014-01-01

We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB

Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

Energy Technology Data Exchange (ETDEWEB)

Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C. [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe (Germany); Koeber, S.; Freude, W., E-mail: christian.koos@kit.edu; Koos, C., E-mail: christian.koos@kit.edu [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen (Germany); Rembe, C. [Polytec GmbH, 76337 Waldbronn (Germany)

2014-05-27

We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB.

Silicon photonics III systems and applications

CERN Document Server

Lockwood, David

2016-01-01

This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

Active graphene-silicon hybrid diode for terahertz waves.

Science.gov (United States)

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-05-11

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Photonic and Plasmonic Guided Modes in Graphene-Silicon Photonic Crystals

DEFF Research Database (Denmark)

Gu, Tingyi; Andryieuski, Andrei; Hao, Yufeng

2015-01-01

We report the results of systematic studies of plasmonic and photonic guided modes in large-area single-layer graphene integrated into a nanostructured silicon substrate. The interaction of light with graphene and substrate photonic crystals can be classified in distinct regimes depending......, filters, sensors, and photodetectors utilizing silicon photonic platforms....... on the relation of the photonic crystal lattice constant and the relevant modal wavelengths, that is, plasmonic, photonic, and free-space. By optimizing the design of the substrate, these resonant modes can increase the absorption of graphene in the infrared, facilitating enhanced performance of modulators...

Silicon photonics at the University of Surrey

Science.gov (United States)

Reed, G. T.; Mashanovich, G.; Gardes, F. Y.; Gwilliam, R. M.; Wright, N. M.; Thomson, D. J.; Timotijevic, B. D.; Litvinenko, K. L.; Headley, W. R.; Smith, A. J.; Knights, A. P.; Jessop, P. E.; Tarr, N. G.; Deane, J. H. B.

2009-05-01

Silicon Photonics is a field that has seen rapid growth and dramatic changes in the past 5 years. According to the MIT Communications Technology Roadmap [1], which aims to establish a common architecture platform across market sectors with a potential $20B in annual revenue, silicon photonics is among the top ten emerging technologies. This has in part been a consequence of the recent involvement of large semiconductor companies around the world, particularly in the USA. Significant investment in the technology has also followed in Japan, Korea, and in the European Union. Low cost is a key driver, so it is imperative to pursue technologies that are mass-producible. Therefore, Silicon Photonics continues to progress at a rapid rate. This paper will describe some of the work of the Silicon Photonics Group at the University of Surrey in the UK. The work is concerned with the sequential development of a series of components for silicon photonic optical circuits, and some of the components are discussed here. In particular the paper will present work on optical waveguides, optical filters, modulators, and lifetime modification of carriers generated by two photon absorption, to improve the performance of Raman amplifiers in silicon.

Silicon photonics for multicore fiber communication

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices.......We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

EDITORIAL: Special issue on silicon photonics

Science.gov (United States)

Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

2008-06-01

The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

Hybrid vertical cavity laser

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2010-01-01

A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide.......A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide....

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics.

Science.gov (United States)

Weigel, Peter O; Savanier, Marc; DeRose, Christopher T; Pomerene, Andrew T; Starbuck, Andrew L; Lentine, Anthony L; Stenger, Vincent; Mookherjea, Shayan

2016-03-01

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics

Science.gov (United States)

Weigel, Peter O.; Savanier, Marc; DeRose, Christopher T.; Pomerene, Andrew T.; Starbuck, Andrew L.; Lentine, Anthony L.; Stenger, Vincent; Mookherjea, Shayan

2016-01-01

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost. PMID:26927022

Enhanced four-wave mixing in graphene-silicon slow-light photonic crystal waveguides

International Nuclear Information System (INIS)

Zhou, Hao; Gu, Tingyi; McMillan, James F.; Wong, Chee Wei; Petrone, Nicholas; Zande, Arend van der; Hone, James C.; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Feng, Guoying; Zhou, Shouhuan

2014-01-01

We demonstrate the enhanced four-wave mixing of monolayer graphene on slow-light silicon photonic crystal waveguides. 200-μm interaction length, a four-wave mixing conversion efficiency of −23 dB is achieved in the graphene-silicon slow-light hybrid, with an enhanced 3-dB conversion bandwidth of about 17 nm. Our measurements match well with nonlinear coupled-mode theory simulations based on the measured waveguide dispersion, and provide an effective way for all-optical signal processing in chip-scale integrated optics.

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

Science.gov (United States)

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-04-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices.

Mid-infrared integrated photonics on silicon: a perspective

Directory of Open Access Journals (Sweden)

Lin Hongtao

2017-12-01

Full Text Available The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

Emerging heterogeneous integrated photonic platforms on silicon

Directory of Open Access Journals (Sweden)

Fathpour Sasan

2015-05-01

Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

Performance of hybrid photon detector prototypes with encapsulated silicon pixel detector and readout for the RICH counters of LHCb

International Nuclear Information System (INIS)

Campbell, M.; George, K.A.; Girone, M.; Gys, T.; Jolly, S.; Piedigrossi, D.; Riedler, P.; Rozema, P.; Snoeys, W.; Wyllie, K.

2003-01-01

These proceedings report on the performance of the latest prototype pixel hybrid photon detector in preparation for the LHCb Ring Imaging Cherenkov detectors. The prototype encapsulates a silicon pixel detector bump-bonded to a binary read-out chip with short (25 ns) peaking time and low ( - ) detection threshold. A brief description of the prototype is given, followed by the preliminary results of the characterisation of the prototype behaviour when tested using a low intensity pulsed light emitting diode. The results obtained are in good agreement with those obtained using previous prototypes. The proceedings conclude with a summary of the current status and future plans

Compound FDTD method for silicon photonics

Directory of Open Access Journals (Sweden)

Abbas Olyaee

2011-09-01

Full Text Available Attempt to manufacture photonics devices on silicon requires theoretical and numerical prediction. This essay presents Compound FDTD (C-FDTD method for comprehensive simulation of silicon photonics devices. Although this method is comprehensive, it maintains conventional Yee algorithm. The method involves variation of refractive index due to nonlinear effects. With the help of this simulator, refractive index change due to free-carriers created through two photon absorption and Kerr effect in silicon waveguide is considered. Results indicate how to choose pump pulse shape to optimum operation of active photonics devices. Also conductivity variation of Si waveguide due to change in free-carrier density is studied. By considering variations in conductivity profile, we are able to design better schemes for sweep free carriers away with reverse bias or nonlinear photovoltaic effect for fast devices and Raman amplifiers.

Enhanced photoresponsivity in graphene-silicon slow-light photonic crystal waveguides

International Nuclear Information System (INIS)

Zhou, Hao; Gu, Tingyi; McMillan, James F.; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Feng, Guoying; Zhou, Shouhuan; Wong, Chee Wei

2016-01-01

We demonstrate the enhanced fast photoresponsivity in graphene hybrid structures by combining the ultrafast dynamics of graphene with improved light-matter interactions in slow-light photonic crystal waveguides. With a 200 μm interaction length, a 0.8 mA/W photoresponsivity is achieved in a graphene-silicon Schottky-like photodetector, with an operating bandwidth in excess of 5 GHz and wavelength range at least from 1480 nm to 1580 nm. Fourfold enhancement of the photocurrent is observed in the slow light region, compared to the wavelength far from the photonic crystal bandedge, for a chip-scale broadband fast photodetector.

Hybrid colloidal plasmonic-photonic crystals.

Science.gov (United States)

Romanov, Sergei G; Korovin, Alexander V; Regensburger, Alois; Peschel, Ulf

2011-06-17

We review the recently emerged class of hybrid metal-dielectric colloidal photonic crystals. The hybrid approach is understood as the combination of a dielectric photonic crystal with a continuous metal film. It allows to achieve a strong modification of the optical properties of photonic crystals by involving the light scattering at electronic excitations in the metal component into moulding of the light flow in series to the diffraction resonances occurring in the body of the photonic crystal. We consider different realizations of hybrid plasmonic-photonic crystals based on two- and three-dimensional colloidal photonic crystals in association with flat and corrugated metal films. In agreement with model calculations, different resonance phenomena determine the optical response of hybrid crystals leading to a broadly tuneable functionality of these crystals. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon Photonics II Components and Integration

CERN Document Server

Lockwood, David J

2011-01-01

This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

International Nuclear Information System (INIS)

Ma, Jingwen; Sun, Xiankai; Xi, Xiang; Yu, Zejie

2016-01-01

Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.

Quasimetallic silicon micromachined photonic crystals

International Nuclear Information System (INIS)

Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

2001-01-01

We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

Silicon photomultiplier as a detector of Cherenkov photons

International Nuclear Information System (INIS)

Korpar, S.; Dolenec, R.; Hara, K.; Iijima, T.; Krizan, P.; Mazuka, Y.; Pestotnik, R.; Stanovnik, A.; Yamaoka, M.

2008-01-01

A novel photon detector-i.e. the silicon photomultiplier-whose main advantage over conventional photomultiplier tubes is the operation in high magnetic fields, has been tested as a photon detector in a proximity focusing RICH with aerogel radiator. This type of RICH counter is proposed for the upgrade of the Belle detector at the KEK B-factory. Recently produced silicon photomultipliers show less noise and have larger size, which are important issues for a large area photon detector. We measured the single photon pulse height distribution, the timing resolution and the position sensitivity for different silicon photomultipliers (Hamamatsu MPPC HC025, HC050, and HC100). The silicon photomultipliers were then used to detect Cherenkov photons emitted by cosmic ray particles in a proximity focusing aerogel RICH. Various light guides were investigated in order to increase the detection efficiency

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Xue, Weiqi; Taghizadeh, Alireza

2015-01-01

into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has......We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light...

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Adiabatic Nanofocusing in Hybrid Gap Plasmon Waveguides on the Silicon-on-Insulator Platform.

Science.gov (United States)

Nielsen, Michael P; Lafone, Lucas; Rakovich, Aliaksandra; Sidiropoulos, Themistoklis P H; Rahmani, Mohsen; Maier, Stefan A; Oulton, Rupert F

2016-02-10

We present an experimental demonstration of a new class of hybrid gap plasmon waveguides on the silicon-on-insulator (SOI) platform. Created by the hybridization of the plasmonic mode of a gap in a thin metal sheet and the transverse-electric (TE) photonic mode of an SOI slab, this waveguide is designed for efficient adiabatic nanofocusing simply by varying the gap width. For gap widths greater than 100 nm, the mode is primarily photonic in character and propagation lengths can be many tens of micrometers. For gap widths below 100 nm, the mode becomes plasmonic in character with field confinement predominantly within the gap region and with propagation lengths of a few microns. We estimate the electric field intensity enhancement in hybrid gap plasmon waveguide tapers at 1550 nm by three-photon absorption of selectively deposited CdSe/ZnS quantum dots within the gap. Here, we show electric field intensity enhancements of up to 167 ± 26 for a 24 nm gap, proving the viability of low loss adiabatic nanofocusing on a commercially relevant photonics platform.

Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

Science.gov (United States)

Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

2017-02-08

We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

Nonclassical light sources for silicon photonics

Science.gov (United States)

Bajoni, Daniele; Galli, Matteo

2017-09-01

Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

Photonic and plasmonic guided modes in graphene-silicon photonic crystals

DEFF Research Database (Denmark)

Gu, Tingyi; Andryieuski, Andrei; Hao, Yufeng

2016-01-01

We report the results of systematic studies of plasmonic and photonic guided modes in large-area single-layer graphene integrated into a nanostructured silicon substrate. The interaction of light with graphene and substrate photonic crystals can be classified in distinct regimes of plasmonic...... and photonic modes....

Chemical silicon surface modification and bioreceptor attachment to develop competitive integrated photonic biosensors.

Science.gov (United States)

Escorihuela, Jorge; Bañuls, María José; García Castelló, Javier; Toccafondo, Veronica; García-Rupérez, Jaime; Puchades, Rosa; Maquieira, Ángel

2012-12-01

Methodology for the functionalization of silicon-based materials employed for the development of photonic label-free nanobiosensors is reported. The studied functionalization based on organosilane chemistry allowed the direct attachment of biomolecules in a single step, maintaining their bioavailability. Using this immobilization approach in probe microarrays, successful specific detection of bacterial DNA is achieved, reaching hybridization sensitivities of 10 pM. The utility of the immobilization approach for the functionalization of label-free nanobiosensors based on photonic crystals and ring resonators was demonstrated using bovine serum albumin (BSA)/anti-BSA as a model system.

Plasmonic and Photonic Modes Excitation in Graphene on Silicon Photonic Crystal Membrane

DEFF Research Database (Denmark)

Andryieuski, Andrei; Gu, Tingyi; Hao, Yufeng

. Being deposited on a silicon photonic crystal membrane graphene serves as a highly promising system for modern optoelectronics with rich variety of possible regimes. Depending on the relation between the photonic crystal lattice constant and wavelengths (plasmonic, photonic and free-space) we identify...... characterization. Measured data are well correlated with the numerical analysis. Combined graphene – silicon photonic crystal membranes can find applications for infrared absorbers, modulators, filters, sensors and photodetectors....... four different interaction schemes. We refer to them as metamaterial, plasmonic, photonic and diffraction grating regimes based on the principle character of light interactions with the graphene deposited on the Si photonic crystal membrane. The optimal configurations for resonant excitation of modes...

Nanostructured silicon for photonics from materials to devices

CERN Document Server

Gaburro, Z; Daldosso, N

2006-01-01

The use of light to channel signals around electronic chips could solve several current problems in microelectronic evolution including: power dissipation, interconnect bottlenecks, input/output from/to optical communication channels, poor signal bandwidth, etc. It is unfortunate that silicon is not a good photonic material: it has a poor light-emission efficiency and exhibits a negligible electro-optical effect. Silicon photonics is a field having the objective of improving the physical properties of silicon; thus turning it into a photonic material and permitting the full convergence of elec

Luneburg lens in silicon photonics.

Science.gov (United States)

Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

2011-03-14

The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

Intravitreal properties of porous silicon photonic crystals

Science.gov (United States)

Cheng, L; Anglin, E; Cunin, F; Kim, D; Sailor, M J; Falkenstein, I; Tammewar, A; Freeman, W R

2009-01-01

Aim To determine the suitability of porous silicon photonic crystals for intraocular drug-delivery. Methods A rugate structure was electrochemically etched into a highly doped p-type silicon substrate to create a porous silicon film that was subsequently removed and ultrasonically fractured into particles. To stabilise the particles in aqueous media, the silicon particles were modified by surface alkylation (using thermal hydrosilylation) or by thermal oxidation. Unmodified particles, hydrosilylated particles and oxidised particles were injected into rabbit vitreous. The stability and toxicity of each type of particle were studied by indirect ophthalmoscopy, biomicroscopy, tonometry, electroretinography (ERG) and histology. Results No toxicity was observed with any type of the particles during a period of >4 months. Surface alkylation led to dramatically increased intravitreal stability and slow degradation. The estimated vitreous half-life increased from 1 week (fresh particles) to 5 weeks (oxidised particles) and to 16 weeks (hydrosilylated particles). Conclusion The porous silicon photonic crystals showed good biocompatibility and may be used as an intraocular drug-delivery system. The intravitreal injectable porous silicon photonic crystals may be engineered to host a variety of therapeutics and achieve controlled drug release over long periods of time to treat chronic vitreoretinal diseases. PMID:18441177

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

International Nuclear Information System (INIS)

Holland, S.E.

2000-01-01

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels

Ultra-high-speed Optical Signal Processing using Silicon Photonics

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

Surface wave photonic device based on porous silicon multilayers

International Nuclear Information System (INIS)

Guillermain, E.; Lysenko, V.; Benyattou, T.

2006-01-01

Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

New dynamic silicon photonic components enabled by MEMS technology

Science.gov (United States)

Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

2018-02-01

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

Photon-phonon laser on crystalline silicon: a feasibility study

International Nuclear Information System (INIS)

Zadernovsky, A A

2015-01-01

We discuss a feasibility of photon-phonon laser action in bulk silicon with electron population inversion. It is well known, that only direct gap semiconductors are used as an active medium in optical lasers. In indirect gap semiconductors, such as crystalline silicon, the near-to-gap radiative electron transitions must be assisted by emission or absorption of phonons to conserve the momentum. The rate of such two-quantum transitions is much less than in direct gap semiconductors, where the similar radiative transitions are single-quantum. As a result, the quantum efficiency of luminescence in silicon is too small to get it as a laser material. Numerous proposals to overcome this problem are aimed at increasing the rate of radiative recombination. We suggest enhancing the quantum efficiency of luminescence in silicon by stimulating the photon part of the two-quantum transitions by light from an appropriate external laser source. This allows us to obtain initially an external-source-assisted lasing in silicon and then a true photon-phonon lasing without any external source of radiation. Performed analysis revealed a number of requirements to the silicon laser medium (temperature, purity and perfection of crystals) and to the intensity of stimulating radiation. We discuss different mechanisms that may hinder the implementation of photon-phonon lasing in silicon

Silicon photonic thermometer operating on multiple polarizations

DEFF Research Database (Denmark)

Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

2016-01-01

A silicon photonics optical thermometer simultaneously operating on the multiple polarizations is designed and experimentally demonstrated. Measured sensitivities are 86pm/°C and 48pm/°C for the transverse-electric and transverse-magnetic polarizations, respectively.......A silicon photonics optical thermometer simultaneously operating on the multiple polarizations is designed and experimentally demonstrated. Measured sensitivities are 86pm/°C and 48pm/°C for the transverse-electric and transverse-magnetic polarizations, respectively....

Multipurpose silicon photonics signal processor core.

Science.gov (United States)

Pérez, Daniel; Gasulla, Ivana; Crudgington, Lee; Thomson, David J; Khokhar, Ali Z; Li, Ke; Cao, Wei; Mashanovich, Goran Z; Capmany, José

2017-09-21

Integrated photonics changes the scaling laws of information and communication systems offering architectural choices that combine photonics with electronics to optimize performance, power, footprint, and cost. Application-specific photonic integrated circuits, where particular circuits/chips are designed to optimally perform particular functionalities, require a considerable number of design and fabrication iterations leading to long development times. A different approach inspired by electronic Field Programmable Gate Arrays is the programmable photonic processor, where a common hardware implemented by a two-dimensional photonic waveguide mesh realizes different functionalities through programming. Here, we report the demonstration of such reconfigurable waveguide mesh in silicon. We demonstrate over 20 different functionalities with a simple seven hexagonal cell structure, which can be applied to different fields including communications, chemical and biomedical sensing, signal processing, multiprocessor networks, and quantum information systems. Our work is an important step toward this paradigm.Integrated optical circuits today are typically designed for a few special functionalities and require complex design and development procedures. Here, the authors demonstrate a reconfigurable but simple silicon waveguide mesh with different functionalities.

Strong spin-photon coupling in silicon

Science.gov (United States)

Samkharadze, N.; Zheng, G.; Kalhor, N.; Brousse, D.; Sammak, A.; Mendes, U. C.; Blais, A.; Scappucci, G.; Vandersypen, L. M. K.

2018-03-01

Long coherence times of single spins in silicon quantum dots make these systems highly attractive for quantum computation, but how to scale up spin qubit systems remains an open question. As a first step to address this issue, we demonstrate the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot, and the microwave photon is stored in an on-chip high-impedance superconducting resonator. The electric field component of the cavity photon couples directly to the charge dipole of the electron in the double dot, and indirectly to the electron spin, through a strong local magnetic field gradient from a nearby micromagnet. Our results provide a route to realizing large networks of quantum dot–based spin qubit registers.

Wavelength-controlled external-cavity laser with a silicon photonic crystal resonant reflector

Science.gov (United States)

Gonzalez-Fernandez, A. A.; Liles, Alexandros A.; Persheyev, Saydulla; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of an alternative design of external-cavity hybrid lasers consisting of a III-V Semiconductor Optical Amplifier with fiber reflector and a Photonic Crystal (PhC) based resonant reflector on SOI. The Silicon reflector comprises a polymer (SU8) bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and sidemode suppression ratio of more than 25 dB.

Challenges and solutions for high-volume testing of silicon photonics

Science.gov (United States)

Polster, Robert; Dai, Liang Yuan; Oikonomou, Michail; Cheng, Qixiang; Rumley, Sebastien; Bergman, Keren

2018-02-01

The first generation of silicon photonic products is now commercially available. While silicon photonics possesses key economic advantages over classical photonic platforms, it has yet to become a commercial success because these advantages can be fully realized only when high-volume testing of silicon photonic devices is made possible. We discuss the costs, challenges, and solutions of photonic chip testing as reported in the recent research literature. We define and propose three underlying paradigms that should be considered when creating photonic test structures: Design for Fast Coupling, Design for Minimal Taps, and Design for Parallel Testing. We underline that a coherent test methodology must be established prior to the design of test structures, and demonstrate how an optimized methodology dramatically reduces the burden when designing for test, by reducing the needed complexity of test structures.

Observation of soliton compression in silicon photonic crystals

Science.gov (United States)

Blanco-Redondo, A.; Husko, C.; Eades, D.; Zhang, Y.; Li, J.; Krauss, T.F.; Eggleton, B.J.

2014-01-01

Solitons are nonlinear waves present in diverse physical systems including plasmas, water surfaces and optics. In silicon, the presence of two photon absorption and accompanying free carriers strongly perturb the canonical dynamics of optical solitons. Here we report the first experimental demonstration of soliton-effect pulse compression of picosecond pulses in silicon, despite two photon absorption and free carriers. Here we achieve compression of 3.7 ps pulses to 1.6 ps with photonic crystal waveguide and an ultra-sensitive frequency-resolved electrical gating technique to detect the ultralow energies in the nanostructured device. Strong agreement with a nonlinear Schrödinger model confirms the measurements. These results further our understanding of nonlinear waves in silicon and open the way to soliton-based functionalities in complementary metal-oxide-semiconductor-compatible platforms. PMID:24423977

Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

Quality Assurance of Pixel Hybrid Photon Detectors for the LHCb Ring Imaging Cherenkov Counters

CERN Document Server

Carson, Laurence

Pion/kaon discrimination in the LHCb experiment will be provided by two Ring Imaging Cherenkov (RICH) counters. These use arrays of 484 Hybrid Photon Detectors (HPDs) to detect the Cherenkov photons emitted by charged particles traversing the RICH. The results from comprehensive quality assurance tests on the 550 HPDs manufactured for LHCb are described. Leakage currents, dead channel probabilities, dark count rates and ion feedback rates are reported. Furthermore, measurements carried out on a sample of tubes to determine the efficiency of the HPD pixel chip by measuring the summed analogue response from the backplane of the silicon sensor are described.

Hybrid Photonic Integration on a Polymer Platform

Directory of Open Access Journals (Sweden)

Ziyang Zhang

2015-09-01

Full Text Available To fulfill the functionality demands from the fast developing optical networks, a hybrid integration approach allows for combining the advantages of various material platforms. We have established a polymer-based hybrid integration platform (polyboard, which provides flexible optical input/ouptut interfaces (I/Os that allow robust coupling of indium phosphide (InP-based active components, passive insertion of thin-film-based optical elements, and on-chip attachment of optical fibers. This work reviews the recent progress of our polyboard platform. On the fundamental level, multi-core waveguides and polymer/silicon nitride heterogeneous waveguides have been fabricated, broadening device design possibilities and enabling 3D photonic integration. Furthermore, 40-channel optical line terminals and compact, bi-directional optical network units have been developed as highly functional, low-cost devices for the wavelength division multiplexed passive optical network. On a larger scale, thermo-optic elements, thin-film elements and an InP gain chip have been integrated on the polyboard to realize a colorless, dual-polarization optical 90° hybrid as the frontend of a coherent receiver. For high-end applications, a wavelength tunable 100Gbaud transmitter module has been demonstrated, manifesting the joint contribution from the polyboard technology, high speed polymer electro-optic modulator, InP driver electronics and ceramic electronic interconnects.

ARROW-based silicon-on-insulator photonic crystal waveguides with reduced losses

DEFF Research Database (Denmark)

Lavrinenko, Andrei; Novitsky, A.; Zhilko, V.V.

2006-01-01

We employ an antiresonant reflecting layers arrangement with silicon-on-insulator based photonic crystal waveguides. The 3D FDTD numerical modelling reveals improved transmission in such structures with a promising potential for their application in photonic circuits.......We employ an antiresonant reflecting layers arrangement with silicon-on-insulator based photonic crystal waveguides. The 3D FDTD numerical modelling reveals improved transmission in such structures with a promising potential for their application in photonic circuits....

Silicon hybrid integration

International Nuclear Information System (INIS)

Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

2011-01-01

Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

System-level integration of active silicon photonic biosensors

Science.gov (United States)

Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

2017-02-01

Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

CERN Document Server

Ohtsu, Motoichi

2016-01-01

This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Science.gov (United States)

Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

2012-07-23

A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

Full-spectrum photon management of solar cell structures for photovoltaic–thermoelectric hybrid systems

International Nuclear Information System (INIS)

Xu, Yuanpei; Xuan, Yimin; Yang, Lili

2015-01-01

Highlights: • A novel photon management method is proposed for hybrid photovoltaic–thermoelectric systems. • Composite structured surfaces enable creditable ultra-broadband anti-reflection property. • Incorporation of anti-reflection and light-trapping brings spectral absorption and transmission. • The efficient photon management of the structured surface is also omnidirectional. - Abstract: In this paper, a novel ultra-broadband photon management structure is proposed for crystalline silicon thin-film solar cells used in the photovoltaic–thermoelectric hybrid system. Nanostructures are employed on both front and back side. Optical behavior of the structure in ultra-broadband (300–2500 nm) are investigated through the Finite Difference Time Domain method. By combing moth-eye and inverted-parabolic surface, a new composite surface structure is proposed for anti-reflection in the ultra-broadband wavelengths. Front metallic nanoparticles, plasmonic back reflector and metallic gratings are studied for light-trapping and the effect of plasmonic back reflector is validated by the experimental data of the external quantum efficiency. The effects of incident angle are discussed for metallic gratings. Numerical computation shows that the incorporation of anti-reflection and light-trapping can obtain high absorption in the solar cell and ensure the rest incident light transmits to the thermoelectric generator efficiently. This work shows potential full-spectrum utilization of solar energy for various photovoltaic devices related with hybrid photovoltaic–thermoelectric systems

Long-wavelength III-V/silicon photonic integrated circuits

NARCIS (Netherlands)

Roelkens, G.C.; Kuyken, B.; Leo, F.; Hattasan, N.; Ryckeboer, E.M.P.; Muneeb, M.; Hu, C.L.; Malik, A.; Hens, Z.; Baets, R.G.F.; Shimura, Y.; Gencarelli, F.; Vincent, B.; Loo, van de R.; Verheyen, P.A.; Lepage, G.; Campenhout, van J.; Cerutti, L.; Rodriquez, J.B.; Tournie, E.; Chen, X; Nedeljkovic, G.; Mashanovich, G.; Liu, X.; Green, W.S.

2013-01-01

We review our work in the field of short-wave infrared and mid-infrared photonic integrated circuits for applications in spectroscopic sensing systems. Passive silicon waveguide circuits, GeSn photodetectors, the integration of III-V and IV-VI semiconductors on these circuits, and silicon nonlinear

Study on photon sensitivity of silicon diodes related to materials used for shielding

International Nuclear Information System (INIS)

Moiseev, T.

1999-01-01

Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

International Nuclear Information System (INIS)

Moiseev, T.

2000-01-01

Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

Hybrid Design, Procurement and Testing for the LHCb Silicon Tracker

CERN Document Server

Bay, A; Frei, R; Jiménez-Otero, S; Perrin, A; Tran, MT; Van Hunen, J J; Vervink, K; Vollhardt, A; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Knöpfle, K T; Löchner, S; Schmelling, M; Schwingenheuer, B; Smale, N J; Adeva, B; Esperante-Pereira, D; Lois, C; Vázquez, P; Lehner, F; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Needham, M; Steinkamp, O; Straumann, U; Volyanskyy, D; Voss, H; Wenger, A

2005-01-01

The Silicon Tracker of the LHCb experiment consists of four silicon detector stations positioned along the beam line of the experiment. The detector modules of each station are constructed from wide pitch silicon microstrip sensors. Located at the module's end, a polyimide hybrid is housing the front-end electronics. The assembly of the more than 600 hybrids has been outsourced to industry. We will report on the design and production status of the hybrids for the LHCb Silicon Tracker and describe the quality assurance tests. Particular emphasis is laid on the vendor qualifying and its impact on our hybrid design that we experienced during the prototyping phase.

Cross two photon absorption in a silicon photonic crystal waveguide fiber taper coupler with a physical junction

Energy Technology Data Exchange (ETDEWEB)

Sarkissian, Raymond, E-mail: RaymondSark@gmail.com; O' Brien, John [Electrophysics department, University of Southern California, Los Angeles, California 90089 (United States)

2015-01-21

Cross two photon absorption in silicon is characterized using a tapered fiber photonic crystal silicon waveguide coupler. There is a physical junction between the tapered fiber and the waveguide constituting a stand-alone device. This device is used to obtain the spectrum for cross two photon absorption coefficient per unit volume of interaction between photons of nondegenerate energy. The corresponding Kerr coefficient per unit volume of interaction is also experimentally extracted. The thermal resistance of the device is also experimentally determined and the response time of the device is estimated for on-chip all-optical signal processing and data transfer between optical signals of different photon energies.

Modeling silicon diode energy response factors for use in therapeutic photon beams.

Science.gov (United States)

Eklund, Karin; Ahnesjö, Anders

2009-10-21

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

Modeling silicon diode energy response factors for use in therapeutic photon beams

International Nuclear Information System (INIS)

Eklund, Karin; Ahnesjoe, Anders

2009-01-01

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm 2 , 10 x 10 cm 2 and 20 x 20 cm 2 fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

Analysis of photon statistics with Silicon Photomultiplier

International Nuclear Information System (INIS)

D'Ascenzo, N.; Saveliev, V.; Wang, L.; Xie, Q.

2015-01-01

The Silicon Photomultiplier (SiPM) is a novel silicon-based photodetector, which represents the modern perspective of low photon flux detection. The aim of this paper is to provide an introduction on the statistical analysis methods needed to understand and estimate in quantitative way the correct features and description of the response of the SiPM to a coherent source of light

Performance Studies of Pixel Hybrid Photon Detectors for the LHCb RICH Counters

CERN Document Server

Aglieri Rinella, G; Piedigrossi, D; Van Lysebetten, A

2004-01-01

The Pixel Hybrid Photon Detector is a vacuum tube with a multi-alkali photo cathode, high voltage cross-focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a readout CMOS electronic chip fully encapsulated in the device. The Pixel HPD fulfils the requirements of the Ring Imaging Cherenkov counters of the LHCb experiment at LHC. The performances of the Pixel HPD will be discussed with reference to laboratory measurements, Cherenkov light imaging in recent beam tests, image distortions due to a magnetic field.

Infrared transparent graphene heater for silicon photonic integrated circuits.

Science.gov (United States)

Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

2016-04-18

Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

Large-scale quantum photonic circuits in silicon

Directory of Open Access Journals (Sweden)

Harris Nicholas C.

2016-08-01

Full Text Available Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today’s classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3 of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes.

Heteroplasmon hybridization in stacked complementary plasmo-photonic crystals.

Science.gov (United States)

Iwanaga, Masanobu; Choi, Bongseok

2015-03-11

We constructed plasmo-photonic crystals in which efficient light-trapping, plasmonic resonances couple with photonic guided resonances of large density of states and high-quality factor. We have numerically and experimentally shown that heteroplasmon hybrid modes emerge in stacked complementary (SC) plasmo-photonic crystals. The resonant electromagnetic-field distributions evidence that the two hybrid modes originate from two different heteroplasmons, exhibiting a large energy splitting of 300 meV. We further revealed a series of plasmo-photonic modes in the SC crystals.

Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

DEFF Research Database (Denmark)

Xiao, Sanshui; Qiu, M.

2007-01-01

Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor is gr...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing.......Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides.

Science.gov (United States)

Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A; Olsson, Roy H; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T

2013-01-01

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic-phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized-with over 1,000 times larger nonlinearity than reported in previous systems-yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip.

Silicon Photonic Integrated Circuit Mode Multiplexer

DEFF Research Database (Denmark)

Ding, Yunhong; Ou, Haiyan; Xu, Jing

2013-01-01

We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully...

Flexible and tunable silicon photonic circuits on plastic substrates

Science.gov (United States)

Chen, Yu; Li, Huan; Li, Mo

2012-09-01

Flexible microelectronics has shown tremendous promise in a broad spectrum of applications, especially those that cannot be addressed by conventional microelectronics in rigid materials and constructions. These unconventional yet important applications range from flexible consumer electronics to conformal sensor arrays and biomedical devices. A recent paradigm shift in implementing flexible electronics is to physically transfer highly integrated devices made in high-quality, crystalline semiconductors on to plastic substrates. Here we demonstrate a flexible form of silicon photonics using the transfer-and-bond fabrication method. Photonic circuits including interferometers and resonators have been transferred onto flexible plastic substrates with preserved functionalities and performance. By mechanically deforming, the optical characteristics of the devices can be tuned reversibly over a remarkably large range. The demonstration of the new flexible photonic systems based on the silicon-on-plastic (SOP) platform could open the door to many future applications, including tunable photonics, optomechanical sensors and biomechanical and bio-photonic probes.

Rectangular-cladding silicon slot waveguide with improved nonlinear performance

Science.gov (United States)

Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

2018-04-01

Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

Single Photon Sources in Silicon Carbide

International Nuclear Information System (INIS)

Brett Johnson

2014-01-01

Single photon sources in semiconductors are highly sought after as they constitute the building blocks of a diverse range of emerging technologies such as integrated quantum information processing, quantum metrology and quantum photonics. In this presentation, we show the first observation of single photon emission from deep level defects in silicon carbide (SiC). The single photon emission is photo-stable at room temperature and surprisingly bright. This represents an exciting alternative to diamond color centers since SiC possesses well-established growth and device engineering protocols. The defect is assigned to the carbon vacancy-antisite pair which gives rise to the AB photoluminescence lines. We discuss its photo-physical properties and their fabrication via electron irradiation. Preliminary measurements on 3C SiC nano-structures will also be discussed. (author)

Silicon nanostructures for photonics and photovoltaics

NARCIS (Netherlands)

Priolo, F.; Gregorkiewicz, T.; Galli, M.; Krauss, T.F.

2014-01-01

Silicon has long been established as the material of choice for the microelectronics industry. This is not yet true in photonics, where the limited degrees of freedom in material design combined with the indirect bandgap are a major constraint. Recent developments, especially those enabled by

Illuminating the future of silicon photonics: optical coupling of carbon nanotubes to microrings

International Nuclear Information System (INIS)

Kato, Y K

2015-01-01

Advances in carbon nanotube material quality and processing techniques have led to an increased interest in nanotube photonics. In particular, emission in the telecommunication wavelengths makes nanotubes compatible with silicon photonics. Noury et al (2014 Nanotechnology 25 215201) have reported on carbon nanotube photoluminescence coupled to silicon microring resonators, underscoring the advantage of combining carbon nanotube emitters with silicon photonics. Their results open up the possibility of using nanotubes in other waveguide-based devices, taking advantage of well-established technologies. (viewpoint)

Silicon nitride photonics: from visible to mid-infrared wavelengths

Science.gov (United States)

Micó, Gloria; Bru, Luis A.; Pastor, Daniel; Doménech, David; Fernández, Juan; Sánchez, Ana; Cirera, Josep M.; Domínguez, Carlos; Muñoz, Pascual

2018-02-01

Silicon nitride has received a lot of attention during the last ten years, for applications such as bio-photonics, tele/datacom, optical signal processing and sensing. In this paper, firstly an updated review of the state of the art of silicon nitride photonics integration platforms will be provided. Secondly, our developments on a moderate confinement Si3N4 platform in the near-infrared will be presented. Finally, our steps towards establishing a Si3N4 based platform for broadband operation spanning from visible to mid-infrared wavelengths will be introduced.

Progress in thin-film silicon solar cells based on photonic-crystal structures

Science.gov (United States)

Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

2018-06-01

We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

Hybridization of active and passive elements for planar photonic components and interconnects

Science.gov (United States)

Pearson, M.; Bidnyk, S.; Balakrishnan, A.

2007-02-01

The deployment of Passive Optical Networks (PON) for Fiber-to-the-Home (FTTH) applications currently represents the fastest growing sector of the telecommunication industry. Traditionally, FTTH transceivers have been manufactured using commodity bulk optics subcomponents, such as thin film filters (TFFs), micro-optic collimating lenses, TO-packaged lasers, and photodetectors. Assembling these subcomponents into a single housing requires active alignment and labor-intensive techniques. Today, the majority of cost reducing strategies using bulk subcomponents has been implemented making future reductions in the price of manufacturing FTTH transceivers unlikely. Future success of large scale deployments of FTTH depends on further cost reductions of transceivers. Realizing the necessity of a radically new packaging approach for assembly of photonic components and interconnects, we designed a novel way of hybridizing active and passive elements into a planar lightwave circuit (PLC) platform. In our approach, all the filtering components were monolithically integrated into the chip using advancements in planar reflective gratings. Subsequently, active components were passively hybridized with the chip using fully-automated high-capacity flip-chip bonders. In this approach, the assembly of the transceiver package required no active alignment and was readily suitable for large-scale production. This paper describes the monolithic integration of filters and hybridization of active components in both silica-on-silicon and silicon-on-insulator PLCs.

Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

CERN Document Server

Radamson, Henry

2014-01-01

Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

High-efficiency power transfer for silicon-based photonic devices

Science.gov (United States)

Son, Gyeongho; Yu, Kyoungsik

2018-02-01

We demonstrate an efficient coupling of guided light of 1550 nm from a standard single-mode optical fiber to a silicon waveguide using the finite-difference time-domain method and propose a fabrication method of tapered optical fibers for efficient power transfer to silicon-based photonic integrated circuits. Adiabatically-varying fiber core diameters with a small tapering angle can be obtained using the tube etching method with hydrofluoric acid and standard single-mode fibers covered by plastic jackets. The optical power transmission of the fundamental HE11 and TE-like modes between the fiber tapers and the inversely-tapered silicon waveguides was calculated with the finite-difference time-domain method to be more than 99% at a wavelength of 1550 nm. The proposed method for adiabatic fiber tapering can be applied in quantum optics, silicon-based photonic integrated circuits, and nanophotonics. Furthermore, efficient coupling within the telecommunication C-band is a promising approach for quantum networks in the future.

Packaged mode multiplexer based on silicon photonics

NARCIS (Netherlands)

Chen, H.; Koonen, A.M.J.; Snyder, B.; Raz, O.; Boom, van den H.P.A.; Chen, X.

2012-01-01

A silicon photonics based mode multiplexer is proposed. Four chirped grating couplers structure can support all 6 channels in a two-mode fiber and realize LP01 and LP11 mode selective exciting. The packaged device is tested.

Hybrid materials for optics and photonics.

Science.gov (United States)

Lebeau, Benedicte; Innocenzi, Plinio

2011-02-01

The interest in organic-inorganic hybrids as materials for optics and photonics started more than 25 years ago and since then has known a continuous and strong growth. The high versatility of sol-gel processing offers a wide range of possibilities to design tailor-made materials in terms of structure, texture, functionality, properties and shape modelling. From the first hybrid material with optical functional properties that has been obtained by incorporation of an organic dye in a silica matrix, the research in the field has quickly evolved towards more sophisticated systems, such as multifunctional and/or multicomponent materials, nanoscale and self-assembled hybrids and devices for integrated optics. In the present critical review, we have focused our attention on three main research areas: passive and active optical hybrid sol-gel materials, and integrated optics. This is far from exhaustive but enough to give an overview of the huge potential of these materials in photonics and optics (254 references).

Optimization of metallic microheaters for high-speed reconfigurable silicon photonics.

Science.gov (United States)

Atabaki, A H; Shah Hosseini, E; Eftekhar, A A; Yegnanarayanan, S; Adibi, A

2010-08-16

The strong thermooptic effect in silicon enables low-power and low-loss reconfiguration of large-scale silicon photonics. Thermal reconfiguration through the integration of metallic microheaters has been one of the more widely used reconfiguration techniques in silicon photonics. In this paper, structural and material optimizations are carried out through heat transport modeling to improve the reconfiguration speed of such devices, and the results are experimentally verified. Around 4 micros reconfiguration time are shown for the optimized structures. Moreover, sub-microsecond reconfiguration time is experimentally demonstrated through the pulsed excitation of the microheaters. The limitation of this pulsed excitation scheme is also discussed through an accurate system-level model developed for the microheater response.

ESSenTIAL: EPIXfab services specifically targeting (SME) industrial takeup of advanced silicon photonics

NARCIS (Netherlands)

Pozo Torres, J.M.; Kumar, P.; Lo Cascio, D.M.R.; Khanna, A.; Dumon, P.; Delbeke, D.; Baets, R.; Fournier, M.; Fedeli, J.-M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Tian, H.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Zhang, X.; Gale, D.

2012-01-01

ePIXfab brings silicon photonics within reach of European small and medium sized enterprises, thereby building on its track record and its integration into Europractice. To this end, ePIXfab offers affordable access to standardized active and passive silicon photonic IC and packaging technology, a

Metropolitan Quantum Key Distribution with Silicon Photonics

Science.gov (United States)

Bunandar, Darius; Lentine, Anthony; Lee, Catherine; Cai, Hong; Long, Christopher M.; Boynton, Nicholas; Martinez, Nicholas; DeRose, Christopher; Chen, Changchen; Grein, Matthew; Trotter, Douglas; Starbuck, Andrew; Pomerene, Andrew; Hamilton, Scott; Wong, Franco N. C.; Camacho, Ryan; Davids, Paul; Urayama, Junji; Englund, Dirk

2018-04-01

Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.

Heterogeneous Silicon Photonics OFDR Sensing System, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Luna will team with Dr. John Bowers of UCSB to develop an Optical Frequency Domain Reflectometry (OFDR) system-on-chip using heterogeneous silicon photonics to...

Silicon Photonic Waveguides for Near- and Mid-Infrared Regions

Science.gov (United States)

Stankovic, S.; Milosevic, M.; Timotijevic, B.; Yang, P. Y.; Teo, E. J.; Crnjanski, J.; Matavulj, P.; Mashanovich, G. Z.

2007-11-01

The basic building block of every photonic circuit is a waveguide. In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator rib waveguide. We also analyse two structures that can find applications in mid- and long-wave infrared regions: free-standing and hollow core omnidirectional waveguides.

Silicon photonics design from devices to systems

CERN Document Server

Chrostowski, Lukas

2015-01-01

From design and simulation through to testing and fabrication, this hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs. In-depth discussion of real-world issues and fabrication challenges ensures that students are fully equipped for careers in industry. Step-by-step tutorials, straightforward examples, and illustrative source code fragments guide students through every aspect of the design process, providing a practical framework for developing and refining key skills. Offering industry-ready expertise, the text supports existing PDKs for CMOS UV-lithography foundry services (OpSIS, ePIXfab, imec, LETI, IME and CMC) and the development of new kits for proprietary processes and clean-room based research. Accompanied by additional online resources to support students, this is the perfect learning package for senior undergraduate and graduate students studying silicon photonics design, and academic and industrial researchers in...

On the efficiency of photon emission during electrical breakdown in silicon

International Nuclear Information System (INIS)

Nepomuk Otte, A.

2009-01-01

This paper presents a study of photons that are emitted during electrical breakdown in p-n silicon diodes. The method that was developed for this study uses the optical-crosstalk effect that is observed in Geigermode-APD (G-APD) photon detectors. The outcome of this study is twofold: firstly, mainly photons with energies between 1.15 and 1.4 eV contribute to the optical crosstalk in G-APDs used in this study. This observation is explained by the strong energy dependence of the absorption length of photons in silicon. Secondly, the intensity with which photons with energies between 1.15 and 1.4 eV are emitted during a breakdown is 3x10 -5 photons per charge carrier in the breakdown region. The uncertainty of the intensity is estimated to be a factor of two. For this study a simulation package Siliconphotomultiplier Simulator (SiSi) was developed, which can be used to address various other questions that arise in the application of G-APDs.

Metropolitan Quantum Key Distribution with Silicon Photonics

Directory of Open Access Journals (Sweden)

Darius Bunandar

2018-04-01

Full Text Available Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss. Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.

Nanostructured Porous Silicon Photonic Crystal for Applications in the Infrared

Directory of Open Access Journals (Sweden)

G. Recio-Sánchez

2012-01-01

Full Text Available In the last decades great interest has been devoted to photonic crystals aiming at the creation of novel devices which can control light propagation. In the present work, two-dimensional (2D and three-dimensional (3D devices based on nanostructured porous silicon have been fabricated. 2D devices consist of a square mesh of 2 μm wide porous silicon veins, leaving 5×5 μm square air holes. 3D structures share the same design although multilayer porous silicon veins are used instead, providing an additional degree of modulation. These devices are fabricated from porous silicon single layers (for 2D structures or multilayers (for 3D structures, opening air holes in them by means of 1 KeV argon ion bombardment through the appropriate copper grids. For 2D structures, a complete photonic band gap for TE polarization is found in the thermal infrared range. For 3D structures, there are no complete band gaps, although several new partial gaps do exist in different high-symmetry directions. The simulation results suggest that these structures are very promising candidates for the development of low-cost photonic devices for their use in the thermal infrared range.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

Science.gov (United States)

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Efficient generation of single and entangled photons on a silicon photonic integrated chip

International Nuclear Information System (INIS)

Mower, Jacob; Englund, Dirk

2011-01-01

We present a protocol for generating on-demand, indistinguishable single photons on a silicon photonic integrated chip. The source is a time-multiplexed spontaneous parametric down-conversion element that allows optimization of single-photon versus multiphoton emission while realizing high output rate and indistinguishability. We minimize both the scaling of active elements and the scaling of active element loss with multiplexing. We then discuss detection strategies and data processing to further optimize the procedure. We simulate an improvement in single-photon-generation efficiency over previous time-multiplexing protocols, assuming existing fabrication capabilities. We then apply this system to generate heralded Bell states. The generation efficiency of both nonclassical states could be increased substantially with improved fabrication procedures.

Silicon-photonic interferometric biosensor using active phase demodulation

Science.gov (United States)

Marin, Y.; Toccafondo, V.; Velha, P.; Scarano, S.; Tirelli, S.; Nottola, A.; Jeong, Y.; Jeon, H. P.; Minunni, M.; Di Pasquale, F.; Oton, C. J.

2018-02-01

Silicon photonics is becoming a consolidated technology, mainly in the telecom/datacom sector, but with a great potential in the chemical and biomedical sensor market too, mainly due to its CMOS compatibility, which allows massfabrication of huge numbers of miniaturized devices at a very low cost per chip. Integrated photonic sensors, typically based on resonators, interferometers, or periodic structures, are easy to multiplex as the light is confined in optical waveguides. In this work, we present a silicon-photonic sensor capable of measuring refractive index and chemical binding of biomolecules on the surface, using a low-cost phase interrogation scheme. The sensor consists of a pair of balanced Mach-Zehnder interferometers with interaction lengths of 2.5 mm and 22 mm, wound to a sensing area of only 500 μm x500 μm. The phase interrogation is performed with a fixed laser and an active phase demodulation approach based on a phase generated carrier (PGC) technique using a phase demodulator integrated within the chip. No laser tuning is required, and the technique can extract the univocal phase value with no sensitivity fading. The detection only requires a photo-receiver per interferometer, analog-to-digital conversion, and simple processing performed in real-time. We present repeatable and linear refractive index measurements, with a detection limit down to 4.7·10-7 RIU. We also present sensing results on a chemically-functionalized sample, where anti-BSA to BSA (bovine serum albumin) binding curves are clearly visible for concentrations down to 5 ppm. Considering the advantages of silicon photonics, this device has great potential over several applications in the chemical/biochemical sensing industry.

Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

International Nuclear Information System (INIS)

Chen Hongda; Zhang Zan; Huang Beiju; Mao Luhong; Zhang Zanyun

2015-01-01

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal–oxide–semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. (review)

Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector.

Science.gov (United States)

Liles, Alexandros A; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

Approaches to single photon detection

International Nuclear Information System (INIS)

Thew, R.T.; Curtz, N.; Eraerds, P.; Walenta, N.; Gautier, J.-D.; Koller, E.; Zhang, J.; Gisin, N.; Zbinden, H.

2009-01-01

We present recent results on our development of single photon detectors, including: gated and free-running InGaAs/InP avalanche photodiodes (APDs); hybrid detection systems based on sum-frequency generation (SFG) and Si APDs-SFG-Si APDs; and SSPDs (superconducting single photon detectors), for telecom wavelengths; as well as SiPM (Silicon photomultiplier) detectors operating in the visible regime.

Why I am optimistic about the silicon-photonic route to quantum computing

Directory of Open Access Journals (Sweden)

Terry Rudolph

2017-03-01

Full Text Available This is a short overview explaining how building a large-scale, silicon-photonic quantum computer has been reduced to the creation of good sources of 3-photon entangled states (and may simplify further. Given such sources, each photon needs to pass through a small, constant, number of components, interfering with at most 2 other spatially nearby photons, and current photonics engineering has already demonstrated the manufacture of thousands of components on two-dimensional semiconductor chips with performance that, once scaled up, allows the creation of tens of thousands of photons entangled in a state universal for quantum computation. At present the fully integrated, silicon-photonic architecture we envisage involves creating the required entangled states by starting with single-photons produced non-deterministically by pumping silicon waveguides (or cavities combined with on-chip filters and nanowire superconducting detectors to herald that a photon has been produced. These sources are multiplexed into being near-deterministic, and the single photons then passed through an interferometer to non-deterministically produce small entangled states—necessarily multiplexed to near-determinism again. This is followed by a “ballistic” scattering of the small-scale entangled photons through an interferometer such that some photons are detected, leaving the remainder in a large-scale entangled state which is provably universal for quantum computing implemented by single-photon measurements. There are a large number of questions regarding the optimum ways to make and use the final cluster state, dealing with static imperfections, constructing the initial entangled photon sources and so on, that need to be investigated before we can aim for millions of qubits capable of billions of computational time steps. The focus in this article is on the theoretical side of such questions.

Advances in silicon nanophotonics

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Pu, Minhao

Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing.

Science.gov (United States)

Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo

2014-07-22

Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Directory of Open Access Journals (Sweden)

Sandro Rao

2016-01-01

Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides

Science.gov (United States)

Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A.; Olsson, Roy H.; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T.

2013-01-01

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic–phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized—with over 1,000 times larger nonlinearity than reported in previous systems—yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip. PMID:23739586

Deterministically swapping frequency-bin entanglement from photon-photon to atom-photon hybrid systems

Science.gov (United States)

Ou, Bao-Quan; Liu, Chang; Sun, Yuan; Chen, Ping-Xing

2018-02-01

Inspired by the recent developments of the research on the atom-photon quantum interface and energy-time entanglement between single-photon pulses, we are motivated to study the deterministic protocol for the frequency-bin entanglement of the atom-photon hybrid system, which is analogous to the frequency-bin entanglement between single-photon pulses. We show that such entanglement arises naturally in considering the interaction between a frequency-bin entangled single-photon pulse pair and a single atom coupled to an optical cavity, via straightforward atom-photon phase gate operations. Its anticipated properties and preliminary examples of its potential application in quantum networking are also demonstrated. Moreover, we construct a specific quantum entanglement witness tool to detect such extended frequency-bin entanglement from a reasonably general set of separable states, and prove its capability theoretically. We focus on the energy-time considerations throughout the analysis.

ISPA (imaging silicon pixel array) experiment

CERN Multimedia

Patrice Loïez

2002-01-01

The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

Dry-film polymer waveguide for silicon photonics chip packaging.

Science.gov (United States)

Hsu, Hsiang-Han; Nakagawa, Shigeru

2014-09-22

Polymer waveguide made by dry film process is demonstrated for silicon photonics chip packaging. With 8 μm × 11.5 μm core waveguide, little penalty is observed up to 25 Gbps before or after the light propagate through a 10-km long single-mode fiber (SMF). Coupling loss to SMF is 0.24 dB and 1.31 dB at the polymer waveguide input and output ends, respectively. Alignment tolerance for 0.5 dB loss increase is +/- 1.0 μm along both vertical and horizontal directions for the coupling from the polymer waveguide to SMF. The dry-film polymer waveguide demonstrates promising performance for silicon photonics chip packaging used in next generation optical multi-chip module.

Photon response of silicon diode neutron detectors

International Nuclear Information System (INIS)

McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.

1976-07-01

The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed

Development of an external readout electronics for a hybrid photon detector

CERN Document Server

Uyttenhove, Simon; Tichon, Jacques; Garcia, Salvador

The pixel hybrid photon detectors currently installed in the LHCb Cherenkov system encapsulate readout electronics in the vacuum tube envelope. The LHCb upgrade and the new trigger system will require their replacement with new photon detectors. The baseline photon detector candidate is the multi-anode photomultiplier. A hybrid photon detector with external readout electronics has been proposed as a backup option. This master thesis covers a R & D phase to investigate this latter concept. Extensive studies of the initial electronics system underlined the noise contributions from the Beetle chip used as front-end readout ASIC and from the ceramic carrier of the photon detector. New front-end electronic boards have been developed and made fully compatible with the existing LHCb-RICH infrastructure. With this compact readout system, Cherenkov photons have been successfully detected in a real particle beam environment. The proof-of-concept of a hybrid photon detector with external readout electronics was val...

Strong coupling of a single electron in silicon to a microwave photon

Science.gov (United States)

Mi, X.; Cady, J. V.; Zajac, D. M.; Deelman, P. W.; Petta, J. R.

2017-01-01

Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.

Will silicon be the photonic material of the third millenium?

International Nuclear Information System (INIS)

Pavesi, L

2003-01-01

Silicon microphotonics, a technology which merges photonics and silicon microelectronic components, is rapidly evolving. Many different fields of application are emerging: transceiver modules for optical communication systems, optical bus systems for ULSI circuits, I/O stages for SOC, displays, .... In this review I will give a brief motivation for silicon microphotonics and try to give the state-of-the-art of this technology. The ingredient still lacking is the silicon laser: a review of the various approaches will be presented. Finally, I will try to draw some conclusions where silicon is predicted to be the material to achieve a full integration of electronic and optical devices. (topical review)

Hybrid integrated single-wavelength laser with silicon micro-ring reflector

Science.gov (United States)

Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

2018-02-01

A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

Low-energy-consumption hybrid lasers for silicon photonics

DEFF Research Database (Denmark)

Chung, Il-Sug; Ran, Qijiang; Mørk, Jesper

2012-01-01

Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed.......Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed....

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

Science.gov (United States)

Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

2017-02-15

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

Quantum photonics hybrid integration platform

Energy Technology Data Exchange (ETDEWEB)

Murray, E.; Floether, F. F. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ellis, D. J. P.; Meany, T.; Bennett, A. J., E-mail: anthony.bennet@crl.toshiba.co.uk; Shields, A. J. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Lee, J. P. [Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Engineering Department, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Griffiths, J. P.; Jones, G. A. C.; Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

2015-10-26

Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single-photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to a SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO{sub 2} cladding. A tuneable Mach Zehnder interferometer (MZI) modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single-photon nature of the emission was verified using the on-chip MZI as a beamsplitter in a Hanbury Brown and Twiss measurement.

Nonlinear behavior of photoluminescence from silicon particles under two-photon excitation

International Nuclear Information System (INIS)

Xu Xingsheng; Yokoyama, Shiyoshi

2011-01-01

Two-photon excited fluorescence (TPEF) under continuous-wave excitation from silicon particles produced by a pulsed laser is investigated. Spectra and images of TPEF from silicon particles are studied under different excitation intensities and operation modes (continuous wave or pulse). It is found that the photoluminescence depends superlinearly on the excitation intensity and that the spectral shape and peaks vary with different silicon particles. The above phenomena show the nonlinear behavior of TPEF from silicon particles, and stimulated emission is a possible process.

High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

DEFF Research Database (Denmark)

Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

2017-01-01

is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

Photon-Enhanced Thermionic Emission in Cesiated p-Type and n-Type Silicon

DEFF Research Database (Denmark)

Reck, Kasper; Dionigi, Fabio; Hansen, Ole

2014-01-01

electrons. Efficiencies above 60% have been predicted theoretically for high solar concentration systems. Silicon is an interesting absorber material for high efficiency PETE solar cells, partly due to its mechanical and thermal properties and partly due to its electrical properties, including a close......Photon-enhanced thermionic emission (PETE) is a relatively new concept for high efficiency solar cells that utilize not only the energy of electrons excited across the band gap by photons, as in conventional photovoltaic solar cells, but also the energy usual lost to thermalization of the excited...... to ideal band gap. The work function of silicon is, however, too high for practical PETE implementations. A well-known method for lowering the work function of silicon (and other materials) is to apply approximately a monolayer of cesium to the silicon surface. We present the first measurements of PETE...

High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

International Nuclear Information System (INIS)

Caër, Charles; Le Roux, Xavier; Cassan, Eric

2013-01-01

We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics

Photonic intermediate layer for silicon tandem solar cells

Energy Technology Data Exchange (ETDEWEB)

Bielawny, Andreas; Miclea, Paul-Tiberiu; Wehrspohn, Ralf [Martin-Luther Universitaet Halle-Wittenberg (Germany). Inst. fuer Physik, Mikro-MD; Lee, Seuong-Mo; Knez, Mato [Max-Planck-Inst. fuer Mikrostrukturphysik, Halle (Germany); Carius, Reinhard [Forschungszentrum Juelich (DE). Inst. fuer Photovoltaik (IEF-5); Lisca, Marian; Rockstuhl, Carsten; Lederer, Falk [Universitaet Jena (Germany). Dept. Physik

2008-07-01

The concept of incorporation of a 3D photonic crystal as diffractive spectral filter within a-Si/mc-Si tandem solar cells has been investigated as a promising application. Our intermediate reflective filter enhances the pathway of spectrally selected light within an amorphous silicon top cell in its spectral region of low absorption. From our previous work, we expect a significant improvement of the tandem's efficiency of about 1.2%(absolute). This increases efficiency for a typical silicon tandem cell from 11.2% to 12.4%, as a result of the optical current-matching of the two junctions. Our wavelength-selective optical element is a 3D-structured optical thin-film - prepared by self-organized artificial opal templates and finalized with atomic layer deposition techniques. The resulting samples are highly periodical thin-film inverted opals made of zinc-oxide. We compare recent experimental data on the optical properties with our simulations and photonic bandstructure calculations.

Silicon photonic crystal all-optical logic gates

Energy Technology Data Exchange (ETDEWEB)

Fu, Yulan [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Hu, Xiaoyong, E-mail: xiaoyonghu@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Gong, Qihuang, E-mail: qhgong@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

2013-01-03

All-optical logic gates, including OR, XOR, NOT, XNOR, and NAND gates, are realized theoretically in a two-dimensional silicon photonic crystal using the light beam interference effect. The ingenious photonic crystal waveguide component design, the precisely controlled optical path difference, and the elaborate device configuration ensure the simultaneous realization of five types of logic gate with low-power and a contrast ratio between the logic states of “1” and “0” as high as 20 dB. High power is not necessary for operation of these logic gate devices. This offers a simple and effective approach for the realization of integrated all-optical logic devices.

Tailoring nonlinearity and dispersion of photonic crystal fibers using hybrid cladding

International Nuclear Information System (INIS)

Zhao-lun, Liu; Lan-tian, Hou; Wei, Wang

2009-01-01

We present a hybrid cladding photonic crystal fiber for shaping high nonlinear and flattened dispersion in a wide range of wavelengths. The new structure adopts hybrid cladding with different pitches, air-holes diameters and air-holes arrayed fashions. The full-vector finite element method with perfectly matched layer is used to investigate the characteristics of the hybrid cladding photonic crystal fiber such as nonlinearity and dispersion properties. The influence of the cladding structure parameters on the nonlinear coefficient and geometric dispersion is analyzed. High nonlinear coefficient and the dispersion properties of fibers are tailored by adjusting the cladding structure parameters. A novel hybrid cladding photonic crystal fiber with high nonlinear coefficient and dispersion flattened which is suited for super continuum generation is designed. (author)

Optical performance of hybrid porous silicon-porous alumina multilayers

Science.gov (United States)

Cencha, L. G.; Antonio Hernández, C.; Forzani, L.; Urteaga, R.; Koropecki, R. R.

2018-05-01

In this work, we study the optical response of structures involving porous silicon and porous alumina in a multi-layered hybrid structure. We performed a rational design of the optimal sequence necessary to produce a high transmission and selective filter, with potential applications in chemical and biosensors. The combination of these porous materials can be used to exploit its distinguishing features, i.e., high transparency of alumina and high refractive index of porous silicon. We assembled hybrid microcavities with a central porous alumina layer between two porous silicon Bragg reflectors. In this way, we constructed a Fabry-Perot resonator with high reflectivity and low absorption that improves the quality of the filter compared to a microcavity built only with porous silicon or porous alumina. We explored a simpler design in which one of the Bragg reflectors is replaced by the aluminium that remains bound to the alumina after its fabrication. We theoretically explored the potential of the proposal and its limitations when considering the roughness of the layers. We found that the quality of a microcavity made entirely with porous silicon shows a limit in the visible range due to light absorption. This limitation is overcome in the hybrid scheme, with the roughness of the layers determining the ultimate quality. Q-factors of 220 are experimentally obtained for microcavities supported on aluminium, while Q-factors around 600 are reached for microcavities with double Bragg reflectors, centred at 560 nm. This represents a four-fold increase with respect to the optimal porous silicon microcavity at this wavelength.

Hybrid inorganic/organic photonic crystal biochips for cancer biomarkers detection

Science.gov (United States)

Sinibaldi, Alberto; Danz, Norbert; Munzert, Peter; Michelotti, Francesco

2018-06-01

We report on hybrid inorganic/organic one-dimensional photonic crystal biochips sustaining Bloch surface waves. The biochips were used, together with an optical platform operating in a label-free and fluorescence configuration simultaneously, to detect the cancer biomarker Angiopoietin 2 in a protein base buffer. The hybrid photonic crystals embed in their geometry a thin functionalization poly-acrylic acid layer deposited by plasma polymerization, which is used to immobilize a monoclonal antibody for highly specific biological recognition. The fluorescence operation mode is described in detail, putting into evidence the role of field enhancement and localization at the photonic crystal surface in the shaping and intensification of the angular fluorescence pattern. In the fluorescence operation mode, the hybrid biochips can attain the limit of detection 6 ng/ml.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

Science.gov (United States)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon.

Science.gov (United States)

Tokel, Onur; Turnali, Ahmet; Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F Ömer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e. , " in-chip" microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.

Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

International Nuclear Information System (INIS)

Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

2015-01-01

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals

International Nuclear Information System (INIS)

Makarova, Maria; Sih, Vanessa; Vuckovic, Jelena; Warga, Joe; Li Rui; Dal Negro, Luca

2008-01-01

Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of ∼6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence

Enhancement of Light Localization in Hybrid Thue-Morse/Periodic Photonic Crystals

Directory of Open Access Journals (Sweden)

Rihab Asmi

2016-01-01

Full Text Available The electric field intensity in one-dimensional (1D quasiperiodic and hybrid photonics band-gap structures is studied in the present paper. The photonic structures are ordered according to Fibonacci, Thue-Morse, Cantor, Rudin-Shapiro, Period-Doubling, Paper-Folding, and Baum-Sweet sequences. The study shows that the electric field intensity is higher for the Thue-Morse multilayer systems. After that the Thue-Morse structure will be combined with a periodic structure to form a hybrid photonic structure. It is shown that this hybrid system is the best for a strong localization of light. The proposed structures have been modeled using the Transfer Matrix Method.

Investigation of the two-photon polymerisation of a Zr-based inorganic-organic hybrid material system

International Nuclear Information System (INIS)

Bhuian, B.; Winfield, R.J.; O'Brien, S.; Crean, G.M.

2006-01-01

Two-photon polymerisation of photo-sensitive materials allows the fabrication of three dimensional micro- and nano-structures for photonic, electronic and micro-system applications. However the usable process window and the applicability of this fabrication technique is significantly determined by the properties of the photo-sensitive material employed. In this study investigation of a custom inorganic-organic hybrid system, cross-linked by a two-photon induced process, is described. The material was produced by sol-gel synthesis using a silicon alkoxide species that also possessed methacrylate functionality. Stabilized zirconium alkoxide precursors were added to the precursor solution in order to reduce drying times and impart enhanced mechanical stability to deposited films. This enabled dry films to be used in the polymerisation process. A structural, optical and mechanical analysis of the optimised sol-gel material is presented. A Ti:sapphire laser with 80 MHz repetition rate, 100 fs pulse duration and 795 nm is used. The influence of both material system and laser processing parameters including: laser power, photo-initiator concentration and zirconium loading, on achievable micro-structure and size is presented

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

Science.gov (United States)

Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

2018-04-01

Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

Silicon based mechanic-photonic wavelength converter for infrared photo-detection

Science.gov (United States)

Rudnitsky, Arkady; Agdarov, Sergey; Gulitsky, Konstantin; Zalevsky, Zeev

2017-06-01

In this paper we present a new concept to realize a mechanic-photonic wavelength converter in silicon chip by construction of nanorods and by modulating the input illumination at temporal frequency matched to the mechanic resonance of the nanorods. The use case is to realize an infrared photo detector in silicon which is not based on absorption but rather on the mechanical interaction of the nanorods with the incoming illumination.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

mm-Wave Wireless Communications based on Silicon Photonics Integrated Circuits

DEFF Research Database (Denmark)

Rommel, Simon; Heck, Martijn; Vegas Olmos, Juan José

Hybrid photonic-wireless transmission schemes in the mm-wave frequency range are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applica...

III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

Science.gov (United States)

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-08-04

The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

Amorphous silicon as high index photonic material

Science.gov (United States)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

Ultra-high-speed wavelength conversion in a silicon photonic chip

DEFF Research Database (Denmark)

Hu, Hao; Ji, Hua; Galili, Michael

2011-01-01

We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...

Theoretical Analysis of Spectral Correlations Between Photon Pairs Generated in Nanoscale Silicon Waveguides

International Nuclear Information System (INIS)

Lu Liang-Liang; Xu Ping; Xu Jian-Ning; Zhu Shi-Ning; He Guang-Qiang

2015-01-01

Spontaneous four wave mixing in nonlinear waveguide is one of the excellent technique for generating photon pairs in well-defined guided modes. Here we present a comprehensive study of the frequency characteristic of correlated photon pairs generated in telecom C-band from a dispersion-engineered silicon wire waveguide. We have demonstrated that the waveguide configuration, shape of pump pulse, two-photon absorption as well as linear losses have significant influences on the biphoton spectral characteristics and the amount of frequency entanglement generated. The superior performance as well as the structural compactness and CMOS compatibility makes the silicon wire waveguide an ideal integrated platform for the implementation of on-chip quantum technologies. (paper)

On the photon annealing of silicon-implanted gallium-nitride layers

International Nuclear Information System (INIS)

Seleznev, B. I.; Moskalev, G. Ya.; Fedorov, D. G.

2016-01-01

The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

Science.gov (United States)

Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

2017-03-20

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

Latest Advances in the Generation of Single Photons in Silicon Carbide

Directory of Open Access Journals (Sweden)

Albert Boretti

2016-06-01

Full Text Available The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC.

Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

DEFF Research Database (Denmark)

Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn

2017-01-01

Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light-matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally...... in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines...

Performance of hybrid photon detector prototypes with 80% active area for the rich counters of LHCB

International Nuclear Information System (INIS)

Albrecht, E.; Alemi, M.; Barber, G.; Bibby, J.; Campbell, M.; Duane, A.; Gys, T.; Montenegro, J.; Piedigrossi, D.; Schomaker, R.; Snoeys, W.; Wotton, S.; Wyllie, K.

2000-01-01

We report on the ongoing work towards a hybrid photon detector with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based on an electrostatically focussed image intensifier tube geometry where the image is de-magnified by a factor of ∼5. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The performance of full-scale prototypes equipped with 61-pixel anodes and external analogue readout is presented. The average signal-to-noise ratio is ∼11 with a peaking time of 1.2 μs. The tube active-to-total surface ratio is 81.7%, which meets the LHCb requirements. The spatial precision is measured to be better than 90 μm. A cluster of three such tubes has been installed in the LHCb RICH 1 prototype where Cherenkov gas rings have been successfully detected. Progress towards the encapsulation of new pixel electronics into a tube is also reported. In particular, the status of the development of a binary readout chip with a peaking time of 25 ns and a low and uniform detection threshold is summarized

Performance of hybrid photon detector prototypes with 80% active area for the rich counters of LHCB

Energy Technology Data Exchange (ETDEWEB)

Albrecht, E.; Alemi, M.; Barber, G.; Bibby, J.; Campbell, M.; Duane, A.; Gys, T. E-mail: thierry.gys@cern.ch; Montenegro, J.; Piedigrossi, D.; Schomaker, R.; Snoeys, W.; Wotton, S.; Wyllie, K

2000-03-11

We report on the ongoing work towards a hybrid photon detector with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based on an electrostatically focussed image intensifier tube geometry where the image is de-magnified by a factor of {approx}5. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The performance of full-scale prototypes equipped with 61-pixel anodes and external analogue readout is presented. The average signal-to-noise ratio is {approx}11 with a peaking time of 1.2 {mu}s. The tube active-to-total surface ratio is 81.7%, which meets the LHCb requirements. The spatial precision is measured to be better than 90 {mu}m. A cluster of three such tubes has been installed in the LHCb RICH 1 prototype where Cherenkov gas rings have been successfully detected. Progress towards the encapsulation of new pixel electronics into a tube is also reported. In particular, the status of the development of a binary readout chip with a peaking time of 25 ns and a low and uniform detection threshold is summarized.

Twin photon pairs in a high-Q silicon microresonator

Energy Technology Data Exchange (ETDEWEB)

Rogers, Steven; Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Jiang, Wei C. [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States)

2015-07-27

We report the generation of high-purity twin photon pairs through cavity-enhanced non-degenerate four-wave mixing (FWM) in a high-Q silicon microdisk resonator. Twin photon pairs are created within the same cavity mode and are consequently expected to be identical in all degrees of freedom. The device is able to produce twin photons at telecommunication wavelengths with a pair generation rate as large as (3.96 ± 0.03) × 10{sup 5} pairs/s, within a narrow bandwidth of 0.72 GHz. A coincidence-to-accidental ratio of 660 ± 62 was measured, the highest value reported to date for twin photon pairs, at a pair generation rate of (2.47 ± 0.04) × 10{sup 4} pairs/s. Through careful engineering of the dispersion matching window, we have reduced the ratio of photons resulting from degenerate FWM to non-degenerate FWM to less than 0.15.

Photonic porous silicon as a pH sensor.

Science.gov (United States)

Pace, Stephanie; Vasani, Roshan B; Zhao, Wei; Perrier, Sébastien; Voelcker, Nicolas H

2014-01-01

Chronic wounds do not heal within 3 months, and during the lengthy healing process, the wound is invariably exposed to bacteria, which can colonize the wound bed and form biofilms. This alters the wound metabolism and brings about a change of pH. In this work, porous silicon photonic films were coated with the pH-responsive polymer poly(2-diethylaminoethyl acrylate). We demonstrated that the pH-responsive polymer deposited on the surface of the photonic film acts as a barrier to prevent water from penetrating inside the porous matrix at neutral pH. Moreover, the device demonstrated optical pH sensing capability visible by the unaided eye.

Large-area 2D periodic crystalline silicon nanodome arrays on nanoimprinted glass exhibiting photonic band structure effects

International Nuclear Information System (INIS)

Becker, C; Lockau, D; Sontheimer, T; Rech, B; Schubert-Bischoff, P; Rudigier-Voigt, E; Bockmeyer, M; Schmidt, F

2012-01-01

Two-dimensional silicon nanodome arrays are prepared on large areas up to 50 cm 2 exhibiting photonic band structure effects in the near-infrared and visible wavelength region by downscaling a recently developed fabrication method based on nanoimprint-patterned glass, high-rate electron-beam evaporation of silicon, self-organized solid phase crystallization and wet-chemical etching. The silicon nanodomes, arranged in square lattice geometry with 300 nm lattice constant, are optically characterized by angular resolved reflection measurements, allowing the partial determination of the photonic band structure. This experimentally determined band structure agrees well with the outcome of three-dimensional optical finite-element simulations. A 16% photonic bandgap is predicted for an optimized geometry of the silicon nanodome arrays. By variation of the duration of the selective etching step, the geometry as well as the optical properties of the periodic silicon nanodome arrays can be controlled systematically. (paper)

Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's.

Science.gov (United States)

Absil, Philippe P; Verheyen, Peter; De Heyn, Peter; Pantouvaki, Marianna; Lepage, Guy; De Coster, Jeroen; Van Campenhout, Joris

2015-04-06

Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

Memory effect in silicon time-gated single-photon avalanche diodes

International Nuclear Information System (INIS)

Dalla Mora, A.; Contini, D.; Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

2015-01-01

We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons

Memory effect in silicon time-gated single-photon avalanche diodes

Energy Technology Data Exchange (ETDEWEB)

Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

2015-03-21

We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

Silicon graphene waveguide tunable broadband microwave photonics phase shifter.

Science.gov (United States)

Capmany, José; Domenech, David; Muñoz, Pascual

2014-04-07

We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifter based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360° radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.

Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

Science.gov (United States)

Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

2018-03-01

Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

Interaction between confined phonons and photons in periodic silicon resonators

Science.gov (United States)

Iskandar, A.; Gwiazda, A.; Younes, J.; Kazan, M.; Bruyant, A.; Tabbal, M.; Lerondel, G.

2018-03-01

In this paper, we demonstrate that phonons and photons of different momenta can be confined and interact with each other within the same nanostructure. The interaction between confined phonons and confined photons in silicon resonator arrays is observed by means of Raman scattering. The Raman spectra from large arrays of dielectric silicon resonators exhibited Raman enhancement accompanied with a downshift and broadening. The analysis of the Raman intensity and line shape using finite-difference time-domain simulations and a spatial correlation model demonstrated an interaction between photons confined in the resonators and phonons confined in highly defective regions prompted by the structuring process. It was shown that the Raman enhancement is due to collective lattice resonance inducing field confinement in the resonators, while the spectra downshift and broadening are signatures of the relaxation of the phonon wave vector due to phonon confinement in defective regions located in the surface layer of the Si resonators. We found that as the resonators increase in height and their shape becomes cylindrical, the amplitude of their coherent oscillation increases and hence their ability to confine the incoming electric field increases.

Porous silicon photonic devices using pulsed anodic etching of lightly doped silicon

International Nuclear Information System (INIS)

Escorcia-Garcia, J; Sarracino MartInez, O; Agarwal, V; Gracia-Jimenez, J M

2009-01-01

The fabrication of porous silicon photonic structures using lightly doped, p-type, silicon wafers (resistivity: 14-22 Ω cm) by pulsed anodic etching is reported. The optical properties have been found to be strongly dependent on the duty cycle and frequency of the applied current. All the interfaces of the single layered samples were digitally analysed by calculating the mean interface roughness (R m ). The interface roughness was found to be maximum for the sample with direct current. The use of a duty cycle above 50%, in a certain range of frequencies, is found to reduce the interface roughness. The optical properties of some microcavities and rugate filters are investigated from the optimized parameters of the duty cycle and frequency, using the current densities of 10, 90 and 150 mA cm -2 .

A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor

Science.gov (United States)

2015-07-21

Hybrid Biosensor Jieun Lee1,2, Jaeman Jang1, Bongsik Choi1, Jinsu Yoon1, Jee-Yeon Kim3, Yang-Kyu Choi3, Dong Myong Kim1, Dae Hwan Kim1 & Sung-Jin Choi1...This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response...of field-effect-transistor (FET)-based biosensors . The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential

III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

Science.gov (United States)

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

2017-01-01

The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III–V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III–V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy. PMID:28777291

Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors.

Science.gov (United States)

Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

2012-10-01

We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit.

Experimental verification of layout physical verification of silicon photonics

Science.gov (United States)

El Shamy, Raghi S.; Swillam, Mohamed A.

2018-02-01

Silicon photonics have been approved as one of the best platforms for dense integration of photonic integrated circuits (PICs) due to the high refractive index contrast among its materials. Silicon on insulator (SOI) is a widespread photonics technology, which support a variety of devices for lots of applications. As the photonics market is growing, the number of components in the PICs increases which increase the need for an automated physical verification (PV) process. This PV process will assure reliable fabrication of the PICs as it will check both the manufacturability and the reliability of the circuit. However, PV process is challenging in the case of PICs as it requires running an exhaustive electromagnetic (EM) simulations. Our group have recently proposed an empirical closed form models for the directional coupler and the waveguide bends based on the SOI technology. The models have shown a very good agreement with both finite element method (FEM) and finite difference time domain (FDTD) solvers. These models save the huge time of the 3D EM simulations and can be easily included in any electronic design automation (EDA) flow as the equations parameters can be easily extracted from the layout. In this paper we present experimental verification for our previously proposed models. SOI directional couplers with different dimensions have been fabricated using electron beam lithography and measured. The results from the measurements of the fabricate devices have been compared to the derived models and show a very good agreement. Also the matching can reach 100% by calibrating certain parameter in the model.

Interfering Heralded Single Photons from Two Separate Silicon Nanowires Pumped at Different Wavelengths

Directory of Open Access Journals (Sweden)

Xiang Zhang

2016-08-01

Full Text Available Practical quantum photonic applications require on-demand single photon sources. As one possible solution, active temporal and wavelength multiplexing has been proposed to build an on-demand single photon source. In this scheme, heralded single photons are generated from different pump wavelengths in many temporal modes. However, the indistinguishability of these heralded single photons has not yet been experimentally confirmed. In this work, we achieve 88% ± 8% Hong–Ou–Mandel quantum interference visibility from heralded single photons generated from two separate silicon nanowires pumped at different wavelengths. This demonstrates that active temporal and wavelength multiplexing could generate indistinguishable heralded single photons.

An overview of current developments in position-sensitive hybrid photon detectors and photo-multiplier tubes

CERN Document Server

Gys, Thierry

1999-01-01

Current developments in position-sensitive hybrid photon detectors and photo-multiplier tubes have stimulated increased interest from a variety of fields such as astronomy, biomedical imaging and high- energy physics. These devices are sensitive to single photons over a photon energy spectrum defined by the transmission of the optical entrance window and the photo-cathode type. Their spatial resolution ranges from a few millimeters for pad hybrid photon detectors and multi-anode photo-multiplier tubes down to a few tens of microns for pixel hybrid photon detectors and electron-bombarded charge-coupled devices. Basic technological and design aspects are assessed in this paper. (21 refs).

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

Science.gov (United States)

Micó, Gloria; Pastor, Daniel; Pérez, Daniel; Doménech, José David; Fernández, Juan; Baños, Rocío; Alemany, Rubén; Sánchez, Ana M.; Cirera, Josep M.; Mas, Roser

2017-01-01

Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform. PMID:28895906

Lasing in silicon–organic hybrid waveguides

Science.gov (United States)

Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

2016-01-01

Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry. PMID:26949229

Hybridization assay of insect antifreezing protein gene by novel multilayered porous silicon nucleic acid biosensor.

Science.gov (United States)

Lv, Xiaoyi; Chen, Liangliang; Zhang, Hongyan; Mo, Jiaqing; Zhong, Furu; Lv, Changwu; Ma, Ji; Jia, Zhenhong

2013-01-15

A fabrication of a novel simple porous silicon polybasic photonic crystal with symmetrical structure has been reported as a nucleic acid biosensor for detecting antifreeze protein gene in insects (Microdera puntipennis dzhungarica), which would be helpful in the development of some new transgenic plants with tolerance of freezing stress. Compared to various porous silicon-based photonic configurations, porous silicon polytype layered structure is quite easy to prepare and shows more stability; moreover, polybasic photonic crystals with symmetrical structure exhibit interesting optical properties with a sharp resonance in the reflectance spectrum, giving a higher Q factor which causes higher sensitivity for sensing performance. In this experiment, DNA oligonucleotides were immobilized into the porous silicon pores using a standard crosslink chemistry method. The porous silicon polybasic symmetrical structure sensor possesses high specificity in performing controlled experiments with non-complementary DNA. The detection limit was found to be 21.3nM for DNA oligonucleotides. The fabricated multilayered porous silicon-based DNA biosensor has potential commercial applications in clinical chemistry for determination of an antifreeze protein gene or other genes. Copyright © 2012 Elsevier B.V. All rights reserved.

Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

Science.gov (United States)

Eklund, Karin; Ahnesjö, Anders

2010-11-01

Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode

Radiation-hard silicon photonics for high energy physics and beyond

CERN Multimedia

CERN. Geneva

2016-01-01

Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

Roadmap for integration of InP based photonics and silicon electronics

NARCIS (Netherlands)

Williams, K.A.

2015-01-01

We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

Organophosphonate functionalized silicon nanowires for DNA hybridization studies

Energy Technology Data Exchange (ETDEWEB)

Pedone, Daniel; Cattani Scholz, Anna; Birner, Stefan; Abstreiter, Gerhard [WSI, TU Muenchen (Germany); Dubey, Manish; Schwartz, Jeffrey [Princeton University, NJ (United States); Tornow, Marc [IHT, TU Braunschweig (Germany)

2007-07-01

Semiconductor nanowire field effect devices have great appeal for label-free sensing applications due to their sensitivity to surface potential changes that may originate from charged adsorbates. In addition to requiring high sensitivity, suitable passivation and functionalization of the semiconductor surface is obligatory. We have fabricated both freely suspended and oxide-supported silicon nanowires from Silicon-on-Insulator substrates using standard nanopatterning methods (EBL, RIE) and sacrificial oxide layer etching. Subsequent to nanofabrication, the devices were first coated with an hydroxyalkylphosphonate monolayer and then bound via bifunctional linker groups to single stranded DNA or PNA oligonucleotides, respectively. We investigated DNA hybridization on such functionalized nanowires using a difference resistance setup, where subtracting the reference signal from a second wire could be used to exclude most non-specific effects. A net change in surface potential on the order of a few mV could be detected upon addition of the complementary DNA strand. This surface potential change corresponds to the hybridization of about 10{sup 10}cm{sup -2} probe strands according to our model calculations that takes into account the entire hybrid system in electrolyte solution.

Silicon photonic crystal nanostructures for refractive index sensing

DEFF Research Database (Denmark)

Dorfner, Dominic; Hürlimann, T.; Zabel, T.

2008-01-01

The authors present the fabrication and optical investigation of Silicon on Insulator photonic crystal drop-filters for use as refractive index sensors. Two types of defect nanocavities (L3 and H1-r) are embedded between two W1 photonic crystal waveguides to evanescently route light at the cavity...... mode frequency between input and output waveguides. Optical characterization of the structures in air and various liquids demonstrate detectivities in excess of n=n = 0:018 and n=n = 0:006 for the H1-r and L3 cavities, respectively. The measured cavity-frequencies and detector refractive index...... responsivities are in good agreement with simulations, demonstrating that the method provides a background free transducer signal with frequency selective addressing of a specic area of the sensor chip....

Silicon CMOS photonics platform for enabling high-speed DQPSK transceivers

NARCIS (Netherlands)

Sanchis, P.; Aamer, M.; Brimont, A.; Gutierrez, A.M.; Sotiropoulos, N.; Waardt, de H.; Thomson, D.J.; Gardes, F.Y.; Reed, G.T.; Ribaud, K.; Grosse, P.; Hartmann, J. M.; Fedeli, J.M.; Marris-Morini, D.; Cassan, E.; Vivien, L.; Vermeulen, D.; Roelkens, G.; Hakansson, A.

2013-01-01

In this work we review the results obtained under the framework of FP7-HELIOS project for integrated DQPSK transceivers in silicon photonics. A differential DQPSK receiver with balanced zero biased Germanium photodiodes has been demonstrated at 10Gbit/s with an error floor around 10-15. Furthermore,

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals.

Science.gov (United States)

Diroll, Benjamin T; Schramke, Katelyn S; Guo, Peijun; Kortshagen, Uwe R; Schaller, Richard D

2017-10-11

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows for selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a subpicosecond change of the dielectric function, resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27%, and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates subpicosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting the modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.

Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

International Nuclear Information System (INIS)

Elgersma, O.; Borstrok, J.J.M.

1989-01-01

Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

Radiation Hard Silicon Photonics Mach-Zehnder Modulator for HEP applications: all-Synopsys SentaurusTM Pre-Irradiation Simulation

CERN Document Server

Cammarata, Simone

2017-01-01

Silicon Photonics may well provide the opportunity for new levels of integration between detectors and their readout electronics. This technology is thus being evaluated at CERN in order to assess its suitability for use in particle physics experiments. In order to check the agreement with measurements and the validity of previous device simulations, a pure Synopsys SentaurusTM simulation of an un-irradiated Mach-Zehnder silicon modulator has been carried out during the Summer Student project. Index Terms—Silicon Photonics, Mach-Zehnder modulator, electro-optic simulation, Synopsys SentaurusTM, electro-optic measurement, HEP.

Optimization of hybrid organic/inorganic poly(3-hexylthiophene-2,5-diyl)/silicon solar cells

Science.gov (United States)

Weingarten, Martin; Sanders, Simon; Stümmler, Dominik; Pfeiffer, Pascal; Vescan, Andrei; Kalisch, Holger

2016-04-01

In the last years, hybrid organic/silicon solar cells have attracted great interest in photovoltaic research due to their potential to become a low-cost alternative for the conventionally used silicon pn-junction solar cells. This work is focused on hybrid solar cells based on the polymer poly(3-hexylthiophene-2,5-diyl), which was deposited on n-doped crystalline silicon via spin-coating under ambient conditions. By employing an anisotropic etching step with potassium hydroxide (KOH), the reflection losses at the silicon surface were reduced. Hereby, the short-circuit current density of the hybrid devices was increased by 31%, leading to a maximum power conversion efficiency (PCE) of 13.1% compared to a PCE of 10.7% for the devices without KOH etching. In addition, the contacts were improved by replacing gold with the more conductive silver as top grid material to reduce the contact resistance and by introducing a thin (˜0.5 nm) lithium fluoride layer between the silicon and the aluminum backside contact to improve electron collection and hole blocking. Hereby, the open-circuit voltage and the fill factor of the hybrid solar cells were further improved and devices with very high PCE up to 14.2% have been realized.

Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation.

Science.gov (United States)

Chen, Charlton J; Zheng, Jiangjun; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

2011-06-20

We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 μm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ∼ 30 mW laser powers. Over this tuning range, the cavity Qs decreases from 3.2×10(5) to 1.2×10(5). Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

Silicon Photonics Integrated Circuits for 5th Generation mm-Wave Wireless Communications

DEFF Research Database (Denmark)

Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

Hybrid photonic-wireless transmission schemes in the mm-wave frequency are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applicability...

Optimized optical devices for edge-coupling-enabled silicon photonics platform

Science.gov (United States)

Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

2018-02-01

We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

Passive Temperature Stabilization of Silicon Photonic Devices Using Liquid Crystals

Directory of Open Access Journals (Sweden)

Joanna Ptasinski

2014-03-01

Full Text Available In this work we explore the negative thermo-optic properties of liquid crystal claddings for passive temperature stabilization of silicon photonic integrated circuits. Photonic circuits are playing an increasing role in communications and computing, but they suffer from temperature dependent performance variation. Most existing techniques aimed at compensation of thermal effects rely on power hungry Joule heating. We show that integrating a liquid crystal cladding helps to minimize the effects of a temperature dependent drift. The advantage of liquid crystals lies in their high negative thermo-optic coefficients in addition to low absorption at the infrared wavelengths.

Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

Science.gov (United States)

Thomas, O; Yuan, Z L; Shields, A J

2012-01-24

Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

Development of a high-speed single-photon pixellated detector for visible wavelengths

CERN Document Server

Mac Raighne, Aaron; Mathot, Serge; McPhate, Jason; Vallerga, John; Jarron, Pierre; Brownlee, Colin; O’Shea, Val

2009-01-01

We present the development of a high-speed, single-photon counting, Hybrid Photo Detector (HPD). The HPD consists of a vacuum tube, containing the detector assembly, sealed with a transparent optical input window. Photons incident on the photocathode eject a photoelectron into a large electric field, which accelerates the incident electron onto a silicon detector. The silicon detector is bump bonded to a Medipix readout chip. This set-up allows for the detection and readout of low incident photon intensities at rates that are otherwise unattainable with current camera technology. Reported is the fabrication of the camera that brings together a range of sophisticated design and fabrication techniques and the expected theoretical imaging performance. Applications to cellular and molecular microscopy are also described in which single-photon-counting abilities at high frame rates are crucial

Two-photon excitation of porphyrin-functionalized porous silicon nanoparticles for photodynamic therapy.

Science.gov (United States)

Secret, Emilie; Maynadier, Marie; Gallud, Audrey; Chaix, Arnaud; Bouffard, Elise; Gary-Bobo, Magali; Marcotte, Nathalie; Mongin, Olivier; El Cheikh, Khaled; Hugues, Vincent; Auffan, Mélanie; Frochot, Céline; Morère, Alain; Maillard, Philippe; Blanchard-Desce, Mireille; Sailor, Michael J; Garcia, Marcel; Durand, Jean-Olivier; Cunin, Frédérique

2014-12-03

Porous silicon nanoparticles (pSiNPs) act as a sensitizer for the 2-photon excitation of a pendant porphyrin using NIR laser light, for imaging and photodynamic therapy. Mannose-functionalized pSiNPs can be vectorized to MCF-7 human breast cancer cells through a mannose receptor-mediated endocytosis mechanism to provide a 3-fold enhancement of the 2-photon PDT effect. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In-depth study of single photon time resolution for the Philips digital silicon photomultiplier

International Nuclear Information System (INIS)

Liu, Z.; Pizzichemi, M.; Ghezzi, A.; Paganoni, M.; Gundacker, S.; Auffray, E.; Lecoq, P.

2016-01-01

The digital silicon photomultiplier (SiPM) has been commercialised by Philips as an innovative technology compared to analog silicon photomultiplier devices. The Philips digital SiPM, has a pair of time to digital converters (TDCs) connected to 12800 single photon avalanche diodes (SPADs). Detailed measurements were performed to understand the low photon time response of the Philips digital SiPM. The single photon time resolution (SPTR) of every single SPAD in a pixel consisting of 3200 SPADs was measured and an average value of 85 ps full width at half maximum (FWHM) was observed. Each SPAD sends the signal to the TDC with different signal propagation time, resulting in a so called trigger network skew. This distribution of the trigger network skew for a pixel (3200 SPADs) has been measured and a variation of 50 ps FWHM was extracted. The SPTR of the whole pixel is the combination of SPAD jitter, trigger network skew, and the SPAD non-uniformity. The SPTR of a complete pixel was 103 ps FWHM at 3.3 V above breakdown voltage. Further, the effect of the crosstalk at a low photon level has been studied, with the two photon time resolution degrading if the events are a combination of detected (true) photons and crosstalk events. Finally, the time response to multiple photons was investigated.

The performance of photon counting imaging with a Geiger mode silicon avalanche photodiode

International Nuclear Information System (INIS)

Qu, Hui-Ming; Zhang, Yi-Fan; Ji, Zhong-Jie; Chen, Qian

2013-01-01

In principle, photon counting imaging can detect a photon. With the development of low-level-light image intensifier techniques and low-level-light detection devices, photon counting imaging can now detect photon images under extremely low illumination. Based on a Geiger mode silicon avalanche photodiode single photon counter, an experimental system for photon counting imaging was built through two-dimensional scanning of a SPAD (single photon avalanche diode) detector. The feasibility of the imaging platform was validated experimentally. Two images with different characteristics, namely, the USAF 1951 resolution test panel and the image of Lena, were chosen to evaluate the imaging performance of the experimental system. The results were compared and analysed. The imaging properties under various illumination and scanning steps were studied. The lowest illumination limit of the SPAD photon counting imaging was determined. (letter)

Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

DEFF Research Database (Denmark)

Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

2016-01-01

We report on a novel design of an on-chip optical temperature sensor based on a Mach-Zehnder interferometer configuration where the two arms consist of hybrid waveguides providing opposite temperature-dependent phase changes to enhance the temperature sensitivity of the sensor. The sensitivity...... of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

Photonic molecules for improving the optical response of macroporous silicon photonic crystals for gas sensing purposes.

Science.gov (United States)

Cardador, D; Segura, D; Rodríguez, A

2018-02-19

In this paper, we report the benefits of working with photonic molecules in macroporous silicon photonic crystals. In particular, we theoretically and experimentally demonstrate that the optical properties of a resonant peak produced by a single photonic atom of 2.6 µm wide can be sequentially improved if a second and a third cavity of the same length are introduced in the structure. As a consequence of that, the base of the peak is reduced from 500 nm to 100 nm, while its amplitude remains constant, increasing its Q-factor from its initial value of 25 up to 175. In addition, the bandgap is enlarged almost twice and the noise within it is mostly eliminated. In this study we also provide a way of reducing the amplitude of one or two peaks, depending whether we are in the two- or three-cavity case, by modifying the length of the involved photonic molecules so that the remainder can be used to measure gas by spectroscopic methods.

Athermal Photonic Devices and Circuits on a Silicon Platform

Science.gov (United States)

Raghunathan, Vivek

In recent years, silicon based optical interconnects has been pursued as an effective solution that can offer cost, energy, distance and bandwidth density improvements over copper. Monolithic integration of optics and electronics has been enabled by silicon photonic devices that can be fabricated using CMOS technology. However, high levels of device integration result in significant local and global temperature fluctuations that prove problematic for silicon based photonic devices. In particular, high temperature dependence of Si refractive index (thermo-optic (TO) coefficient) shifts the filter response of resonant devices that limit wavelength resolution in various applications. Active thermal compensation using heaters and thermo-electric coolers are the legacy solution for low density integration. However, the required electrical power, device foot print and number of input/output (I/O) lines limit the integration density. We present a passive approach to an athermal design that involves compensation of positive TO effects from a silicon core by negative TO effects of the polymer cladding. In addition, the design rule involves engineering the waveguide core geometry depending on the resonance wavelength under consideration to ensure desired amount of light in the polymer. We develop exact design requirements for a TO peak stability of 0 pm/K and present prototype performance of 0.5 pm/K. We explore the material design space through initiated chemical vapor deposition (iCVD) of 2 polymer cladding choices. We study the effect of cross-linking on the optical properties of a polymer and establish the superior performance of the co-polymer cladding compared to the homo-polymer. Integration of polymer clad devices in an electronic-photonic architecture requires the possibility of multi-layer stacking capability. We use a low temperature, high density plasma chemical vapor deposition of SiO2/SiN x to hermetically seal the athermal. Further, we employ visible light for

Visual Sensor for Sterilization of Polymer Fixtures Using Embedded Mesoporous Silicon Photonic Crystals.

Science.gov (United States)

Kumeria, Tushar; Wang, Joanna; Chan, Nicole; Harris, Todd J; Sailor, Michael J

2018-01-26

A porous photonic crystal is integrated with a plastic medical fixture (IV connector hub) to provide a visual colorimetric sensor to indicate the presence or absence of alcohol used to sterilize the fixture. The photonic crystal is prepared in porous silicon (pSi) by electrochemical anodization of single crystal silicon, and the porosity and the stop band of the material is engineered such that the integrated device visibly changes color (green to red or blue to green) when infiltrated with alcohol. Two types of self-reporting devices are prepared and their performance compared: the first type involves heat-assisted fusion of a freestanding pSi photonic crystal to the connector end of a preformed polycarbonate hub, forming a composite where the unfilled portion of the pSi film acts as the sensor; the second involves generation of an all-polymer replica of the pSi photonic crystal by complete thermal infiltration of the pSi film and subsequent chemical dissolution of the pSi portion. Both types of sensors visibly change color when wetted with alcohol, and the color reverts to the original upon evaporation of the liquid. The sensor performance is verified using E. coli-infected samples.

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

Science.gov (United States)

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

Learning nitrogen-vacancy electron spin dynamics on a silicon quantum photonic simulator

NARCIS (Netherlands)

Wang, J.; Paesani, S.; Santagati, R.; Knauer, S.; Gentile, A. A.; Wiebe, N.; Petruzzella, M.; Laing, A.; Rarity, J. G.; O'Brien, J. L.; Thompson, M. G.

2017-01-01

We present the experimental demonstration of quantum Hamiltonian learning. Using an integrated silicon-photonics quantum simulator with the classical machine learning technique, we successfully learn the Hamiltonian dynamics of a diamond nitrogen-vacancy center's electron ground-state spin.

A thin-film silicon/silicon hetero-junction hybrid solar cell for photoelectrochemical water-reduction applications

NARCIS (Netherlands)

Vasudevan, R.A.; Thanawala, Z; Han, L.; Buijs, Thom; Tan, H.; Deligiannis, D.; Perez Rodriguez, P.; Digdaya, I.A.; Smith, W.A.; Zeman, M.; Smets, A.H.M.

2016-01-01

A hybrid tandem solar cell consisting of a thin-film, nanocrystalline silicon top junction and a siliconheterojunction bottom junction is proposed as a supporting solar cell for photoelectrochemical applications.Tunneling recombination junction engineering is shown to be an important consideration

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Energy Technology Data Exchange (ETDEWEB)

Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire; Sagnes, Isabelle; Raj, Rama [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Lenglé, Kevin; Gay, Mathilde; Bramerie, Laurent [Université Européenne de Bretagne (UEB), 5 Boulevard Laënnec, 35000 Rennes (France); CNRS-Foton Laboratory (UMR 6082), Enssat, BP 80518, 22305 Lannion Cedex (France); Braive, Rémy; Raineri, Fabrice, E-mail: fabrice.raineri@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Université Paris Diderot, Sorbonne Paris Cité, 75207 Paris Cedex 13 (France)

2014-01-06

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

10 Gb/s operation of photonic crystal silicon optical modulators.

Science.gov (United States)

Nguyen, Hong C; Sakai, Yuya; Shinkawa, Mizuki; Ishikura, Norihiro; Baba, Toshihiko

2011-07-04

We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.

Effects of silicon on seed setting rate of rice intersubspecific hybrids.

Science.gov (United States)

Li, W-C; Zhang, L; Wang, J; Wang, D; Wang, T-X; Duan, C-X

2015-09-01

The present study found semi-sterility in rice intersubspecific hybrids of 'Taichung 65' x 'Guangluai 4' and 'Ludao' x 'Qiuguang'. Embryo sac fertility was evaluated using the overall staining transparent method. The results showed that the embryo sac contained a normal egg cell, normal synergid cells, polar nuclei cells, and antipodal cells, indicating that semi-sterility was caused mainly by pollen semi-sterility. In the pot experiment, the effects of silicon on the seed-setting rate of the two intersubspecific hybrids were examined. The results showed that the rate of anther dehiscence, number of pollen per stigma of Fl plants, potential of pollen grain germination, and fertility of the spikelet were significantly improved by the utilization of silicon fertilizer.

Nanostructured porous silicon: The winding road from photonics to cell scaffolds. A review.

Directory of Open Access Journals (Sweden)

Jacobo eHernandez-Montelongo

2015-05-01

Full Text Available For over 20 years nanostructured porous silicon (nanoPS has found a vast number of applications in the broad fields of photonics and optoelectronics, triggered by the discovery of its photoluminescent behavior in 1990. Besides, its biocompatibility, biodegradability, and bioresorbability make porous silicon (PSi an appealing biomaterial. These properties are largely a consequence of its particular susceptibility to oxidation, leading to the formation of silicon oxide which is readily dissolved by body fluids. This paper reviews the evolution of the applications of PSi and nanoPS from photonics through biophotonics, to their use as cell scaffolds, whether as an implantable substitute biomaterial, mainly for bony and ophthalmological tissues, or as an in-vitro cell conditioning support, especially for pluripotent cells. For any of these applications, PSi/nanoPS can be used directly after synthesis from Si wafers, upon appropriate surface modification processes, or as a composite biomaterial. Unedited studies of fluorescently active PSi structures for cell culture are brought to evidence the margin for new developments.

Hybrid Silicon-Based Organic/Inorganic Block Copolymers with Sol-Gel Active Moieties: Synthetic Advances, Self-Assembly and Applications in Biomedicine and Materials Science.

Science.gov (United States)

Czarnecki, Sebastian; Bertin, Annabelle

2018-03-07

Hybrid silicon-based organic/inorganic (multi)block copolymers are promising polymeric precursors to create robust nano-objects and nanomaterials due to their sol-gel active moieties via self-assembly in solution or in bulk. Such nano-objects and nanomaterials have great potential in biomedicine as nanocarriers or scaffolds for bone regeneration as well as in materials science as Pickering emulsifiers, photonic crystals or coatings/films with antibiofouling, antibacterial or water- and oil-repellent properties. Thus, this Review outlines recent synthetic efforts in the preparation of these hybrid inorganic/organic block copolymers, gives an overview of their self-assembled structures and finally presents recent examples of their use in the biomedical field and material science. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Qubit entanglement between ring-resonator photon-pair sources on a silicon chip

Science.gov (United States)

Silverstone, J. W.; Santagati, R.; Bonneau, D.; Strain, M. J.; Sorel, M.; O'Brien, J. L.; Thompson, M. G.

2015-01-01

Entanglement—one of the most delicate phenomena in nature—is an essential resource for quantum information applications. Scalable photonic quantum devices must generate and control qubit entanglement on-chip, where quantum information is naturally encoded in photon path. Here we report a silicon photonic chip that uses resonant-enhanced photon-pair sources, spectral demultiplexers and reconfigurable optics to generate a path-entangled two-qubit state and analyse its entanglement. We show that ring-resonator-based spontaneous four-wave mixing photon-pair sources can be made highly indistinguishable and that their spectral correlations are small. We use on-chip frequency demultiplexers and reconfigurable optics to perform both quantum state tomography and the strict Bell-CHSH test, both of which confirm a high level of on-chip entanglement. This work demonstrates the integration of high-performance components that will be essential for building quantum devices and systems to harness photonic entanglement on the large scale. PMID:26245267

Application of quantum-dot multi-wavelength lasers and silicon photonic ring resonators to data-center optical interconnects

Science.gov (United States)

Beckett, Douglas J. S.; Hickey, Ryan; Logan, Dylan F.; Knights, Andrew P.; Chen, Rong; Cao, Bin; Wheeldon, Jeffery F.

2018-02-01

Quantum dot comb sources integrated with silicon photonic ring-resonator filters and modulators enable the realization of optical sub-components and modules for both inter- and intra-data-center applications. Low-noise, multi-wavelength, single-chip, laser sources, PAM4 modulation and direct detection allow a practical, scalable, architecture for applications beyond 400 Gb/s. Multi-wavelength, single-chip light sources are essential for reducing power dissipation, space and cost, while silicon photonic ring resonators offer high-performance with space and power efficiency.

Silicon technology-based micro-systems for atomic force microscopy/photon scanning tunnelling microscopy.

Science.gov (United States)

Gall-Borrut, P; Belier, B; Falgayrettes, P; Castagne, M; Bergaud, C; Temple-Boyer, P

2001-04-01

We developed silicon nitride cantilevers integrating a probe tip and a wave guide that is prolonged on the silicon holder with one or two guides. A micro-system is bonded to a photodetector. The resulting hybrid system enables us to obtain simultaneously topographic and optical near-field images. Examples of images obtained on a longitudinal cross-section of an optical fibre are shown.

Compact silicon photonic resonance-sssisted variable optical attenuator.

Science.gov (United States)

Wang, Xiaoxi; Aguinaldo, Ryan; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

2016-11-28

A two-part silicon photonic variable optical attenuator is demonstrated in a compact footprint which can provide a high extinction ratio at wavelengths between 1520 nm and 1620 nm. The device was made by following the conventional p-i-n waveguide section by a high-extinction-ratio second-order microring filter section. The rings provide additional on-off contrast by utilizing a thermal resonance shift, which harvested the heat dissipated by current injection in the p-i-n junction. We derive and discuss a simple thermal-resistance model in explanation of these effects.

Universal quantum gates for photon-atom hybrid systems assisted by bad cavities

Science.gov (United States)

Wang, Guan-Yu; Liu, Qian; Wei, Hai-Rui; Li, Tao; Ai, Qing; Deng, Fu-Guo

2016-01-01

We present two deterministic schemes for constructing a CNOT gate and a Toffoli gate on photon-atom and photon-atom-atom hybrid quantum systems assisted by bad cavities, respectively. They are achieved by cavity-assisted photon scattering and work in the intermediate coupling region with bad cavities, which relaxes the difficulty of their implementation in experiment. Also, bad cavities are feasible for fast quantum operations and reading out information. Compared with previous works, our schemes do not need any auxiliary qubits and measurements. Moreover, the schematic setups for these gates are simple, especially that for our Toffoli gate as only a quarter wave packet is used to interact the photon with each of the atoms every time. These atom-cavity systems can be used as the quantum nodes in long-distance quantum communication as their relatively long coherence time is suitable for multi-time operations between the photon and the system. Our calculations show that the average fidelities and efficiencies of our two universal hybrid quantum gates are high with current experimental technology. PMID:27067992

Out of the lab and into the fab: Nano-alignment as an enabler for Silicon Photonics' next chapter

Science.gov (United States)

Jordan, Scott

2017-06-01

The rapid advent of Silicon Photonics presents many challenges for test and packaging. Here we concisely review SiP device attributes that differ significantly from classical photonic configurations, with a view to the future beyond current, connectivity-oriented silicon photonics developments, looking to such endeavors as all-optical computing and quantum computing. The necessity for nano-precision alignment of optical elements in test and packaging operations quickly emerges as the unfilled need. We review the industrial test and packaging solutions developed back in the 1997-2001 photonics boom to address the needs of that era's devices, and map their gaps with the new SiP device classes. Finally we review the new state-of-the-art of recent advances in the field that address these gaps.

Topology optimized mode multiplexing in silicon-on-insulator photonic wire waveguides

DEFF Research Database (Denmark)

Frellsen, Louise Floor; Ding, Yunhong; Sigmund, Ole

2016-01-01

We design and experimentally verify a topology optimized low-loss and broadband two-mode (de-)multiplexer, which is (de-)multiplexing the fundamental and the first-order transverse-electric modes in a silicon photonic wire. The device has a footprint of 2.6 μm x 4.22 μm and exhibits a loss 14 d...

Evaluation of a hybrid photon counting pixel detector for X-ray polarimetry

International Nuclear Information System (INIS)

Michel, T.; Durst, J.

2008-01-01

It has already been shown in literature that X-ray sensitive CCDs can be used to measure the degree of linear polarization of X-rays using the effect that photoelectrons are emitted with a non-isotropic angular distribution in respect to the orientation of the electric field vector of impinging photons. Up to now hybrid semiconductor pixel detectors like the Timepix-detector have never been used for X-ray polarimetry. The main reason for this is that the pixel pitch is large compared to CCDs which results in a much smaller analyzing power. On the other hand, the active thickness of the sensor layer can be larger than in CCDs leading to an increased efficiency. Therefore hybrid photon counting pixel detectors may be used for imaging and polarimetry at higher photon energies. For irradiation with polarized X-ray photons we were able to measure an asymmetry between vertical and horizontal double hit events in neighboring pixels of the hybrid photon counting Timepix-detector at room temperature. For the specific spectrum used in our experiment an average polarization asymmetry of (0.96±0.02)% was measured. Additionally, the Timepix-detector with its spectroscopic time-over-threshold-mode was used to measure the dependence of the polarization asymmetry on energy deposition in the detector. Polarization asymmetries between 0.2% at 29 keV and 3.4% at 78 keV energy deposition were determined. The results can be reproduced with our EGS4-based Monte-Carlo simulation

Wannier–Stark electro-optical effect, quasi-guided and photonic modes in 2D macroporous silicon structures with SiO_2 coatings

International Nuclear Information System (INIS)

Karachevtseva, L.; Goltviansky, Yu.; Sapelnikova, O.; Lytvynenko, O.; Stronska, O.; Bo, Wang; Kartel, M.

2016-01-01

Highlights: • The IR absorption spectra of oxidized macroporous silicon were studied. • The Wannier–Stark electro-optical effect on Si-SiO_2 boundary was confirmed. • An additional electric field of quasi-guided optical modes was evaluated. • The photonic modes and band gaps were measured as peculiarities in absorption spectra. - Abstract: Opportunities to enhance the properties of structured surfaces were demonstrated on 2D macroporous silicon structures with SiO_2 coatings. We investigated the IR light absorption oscillations in macroporous silicon structures with SiO2 coatings 0–800 nm thick. The Wannier–Stark electro-optical effect due to strong electric field on Si-SiO_2boundary and an additional electric field of quasi-guided optical modes were taken into account. The photonic modes and band gaps were also considered as peculiarities in absorbance spectra of macroporous silicon structures with a thick SiO_2 coating. The photonic modes do not coincide with the quasi-guided modes in the silicon matrix and do not appear in absorption spectra of 2D macroporous silicon structures with surface nanocrystals.

Mitochondria-targeted cationic porphyrin-triphenylamine hybrids for enhanced two-photon photodynamic therapy.

Science.gov (United States)

Hammerer, Fabien; Poyer, Florent; Fourmois, Laura; Chen, Su; Garcia, Guillaume; Teulade-Fichou, Marie-Paule; Maillard, Philippe; Mahuteau-Betzer, Florence

2018-01-01

The proof of concept for two-photon activated photodynamic therapy has already been achieved for cancer treatment but the efficiency of this approach still heavily relies on the availability of photosensitizers combining high two-photon absorption and biocompatibility. In this line we recently reported on a series of porphyrin-triphenylamine hybrids which exhibit high singlet oxygen production quantum yield as well as high two-photon absorption cross-sections but with a very poor cellular internalization. We present herein new photosensitizers of the same porphyrin-triphenylamine hybrid series but bearing cationic charges which led to strongly enhanced water solubility and thus cellular penetration. In addition the new compounds have been found localized in mitochondria that are preferential target organelles for photodynamic therapy. Altogether the strongly improved properties of the new series combined with their specific mitochondrial localization lead to a significantly enhanced two-photon activated photodynamic therapy efficiency. Copyright © 2017 Elsevier Ltd. All rights reserved.

On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

Science.gov (United States)

Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

2018-04-01

The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

Miniature silicon photodiodes for photon and electron radiation dosimetry in therapeutical applications

International Nuclear Information System (INIS)

Gilar, O.; Petr, I.

1986-01-01

The silicon diode is manufactured from P type silicon, the P layer is implanted with boron atoms and the N layer with phosphorus atoms. The diode dimensions are 2x2x0.2 mm. It is encased in elastic tissue-equivalent material. The electrodes are from an Al foil. The diode can be used as an in-vivo dosemeter in human body cavities. When irradiated, it supplies information on the instantaneous dose rate at a given point and on the dose cumulated over a certain time. Its current response to gamma radiation kerma rate is linear, directional sensitivity is isotropic. Temperature sensitivity of the photodiode is shown graphically for the range 20 to 40 degC, and the depth dose distribution measured in a water phantom is given for 6, 12 and 20 MeV photons and electrons. The diode energy dependence shows increased sensitivity to low-energy photons. (M.D.)

Correlated Photon Pair Generation in Silicon Wire Waveguides at 1.5 μm

International Nuclear Information System (INIS)

Cheng Jie-Rong; Zhang Wei; Zhou Qiang; Feng Xue; Huang Yi-Dong; Peng Jiang-De

2010-01-01

Correlated photon pairs at 1.5μm are generated in a silicon wire waveguide (SWW) with a length of only 1.6mm. Experimental results show that the single-side count rates on both sides increase quadratically with pump light, indicating that photons are generated from the spontaneous four-wave mixing (SFWM) processes. The quantum correlation property of the generated photons is demonstrated by the ratio between coincident and accidental coincident count rates. The highest ratio measured at room temperature is to be about 19, showing that generated photon pairs have strong quantum correlation property and low noise. What is more, the wavelength correlation property of the coincident count is also measured to demonstrate the correlated photon pair generation. The experimental results demonstrate that SWWs have great potential in on-chip integrated low-noise correlated photon pair sources at 1.5 μm. (fundamental areas of phenomenology(including applications))

Label-free virus detection using silicon photonic microring resonators.

Science.gov (United States)

McClellan, Melinda S; Domier, Leslie L; Bailey, Ryan C

2012-01-15

Viruses represent a continual threat to humans through a number of mechanisms, which include disease, bioterrorism, and destruction of both plant and animal food resources. Many contemporary techniques used for the detection of viruses and viral infections suffer from limitations such as the need for extensive sample preparation or the lengthy window between infection and measurable immune response, for serological methods. In order to develop a method that is fast, cost-effective, and features reduced sample preparation compared to many other virus detection methods, we report the application of silicon photonic microring resonators for the direct, label-free detection of intact viruses in both purified samples as well as in a complex, real-world analytical matrix. As a model system, we demonstrate the quantitative detection of Bean pod mottle virus, a pathogen of great agricultural importance, with a limit of detection of 10 ng/mL. By simply grinding a small amount of leaf sample in buffer with a mortar and pestle, infected leaves can be identified over a healthy control with a total analysis time of less than 45 min. Given the inherent scalability and multiplexing capability of the semiconductor-based technology, we feel that silicon photonic microring resonators are well-positioned as a promising analytical tool for a number of viral detection applications. Copyright © 2011 Elsevier B.V. All rights reserved.

All-optically tunable waveform synthesis by a silicon nanowaveguide ring resonator coupled with a photonic-crystal fiber frequency shifter

KAUST Repository

Savvin, Aleksandr D.

2011-03-01

A silicon nanowaveguide ring resonator is combined with a photonic-crystal fiber (PCF) frequency shifter to demonstrate an all-optically tunable synthesis of ultrashort pulse trains, modulated by ultrafast photoinduced free-carrier generation in the silicon resonator. Pump-probe measurements performed with a 50-fs, 625-nm second-harmonic output of a Cr:forsterite laser, used as a carrier-injecting pump, and a 1.50-1.56-μm frequency-tunable 100-fs soliton output of a photonic-crystal fiber, serving as a probe, resolve tunable ultrafast oscillatory features in the silicon nanowaveguide resonator response. © 2010 Elsevier B.V. All rights reserved.

All-optically tunable waveform synthesis by a silicon nanowaveguide ring resonator coupled with a photonic-crystal fiber frequency shifter

KAUST Repository

Savvin, Aleksandr D.; Melnikov, Vasily; Fedotov, Il'ya V.; Fedotov, Andrei B.; Perova, Tatiana S.; Zheltikov, Aleksei M.

2011-01-01

A silicon nanowaveguide ring resonator is combined with a photonic-crystal fiber (PCF) frequency shifter to demonstrate an all-optically tunable synthesis of ultrashort pulse trains, modulated by ultrafast photoinduced free-carrier generation in the silicon resonator. Pump-probe measurements performed with a 50-fs, 625-nm second-harmonic output of a Cr:forsterite laser, used as a carrier-injecting pump, and a 1.50-1.56-μm frequency-tunable 100-fs soliton output of a photonic-crystal fiber, serving as a probe, resolve tunable ultrafast oscillatory features in the silicon nanowaveguide resonator response. © 2010 Elsevier B.V. All rights reserved.

The mid-IR silicon photonics sensor platform (Conference Presentation)

Science.gov (United States)

Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

2017-02-01

Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

Spontaneous emission control in a tunable hybrid photonic system

NARCIS (Netherlands)

Frimmer, M.; Koenderink, A.F.

2013-01-01

We experimentally demonstrate control of the rate of spontaneous emission in a tunable hybrid photonic system that consists of two canonical building blocks for spontaneous emission control, an optical antenna and a mirror, each providing a modification of the local density of optical states (LDOS).

The European BOOM project :silicon photonics for high-capacity optical packet routers

NARCIS (Netherlands)

Stampoulidis, L.; Vyrsokinos, K.; Voigt, K.; Zimmermann, L.; Gomez-Agis, F.; Dorren, H.J.S.; Sheng, Z.; Thourhout, Van D.; Moerl, L.; Kreissl, J.; Sedighi, B.; Scheytt, J.C.; Pagano, A.; Riccardi, E.

2010-01-01

During the past years, monolithic integration in InP has been the driving force for the realization of integrated photonic routing systems. The advent of silicon as a basis for cost-effective integration and its potential blend with III–V material is now opening exciting opportunities for the

Invited Article: Electrically tunable silicon-based on-chip microdisk resonator for integrated microwave photonic applications

Directory of Open Access Journals (Sweden)

Weifeng Zhang

2016-11-01

Full Text Available Silicon photonics with advantages of small footprint, compatibility with the mature CMOS fabrication technology, and its potential for seamless integration with electronics is making a significant difference in realizing on-chip integration of photonic systems. A microdisk resonator (MDR with a strong capacity in trapping and storing photons is a versatile element in photonic integrated circuits. Thanks to the large index contrast, a silicon-based MDR with an ultra-compact footprint has a great potential for large-scale and high-density integrations. However, the existence of multiple whispering gallery modes (WGMs and resonance splitting in an MDR imposes inherent limitations on its widespread applications. In addition, the waveguide structure of an MDR is incompatible with that of a lateral PN junction, which leads to the deprivation of its electrical tunability. To circumvent these limitations, in this paper we propose a novel design of a silicon-based MDR by introducing a specifically designed slab waveguide to surround the disk and the lateral sides of the bus waveguide to suppress higher-order WGMs and to support the incorporation of a lateral PN junction for electrical tunability. An MDR based on the proposed design is fabricated and its optical performance is evaluated. The fabricated MDR exhibits single-mode operation with a free spectral range of 28.85 nm. Its electrical tunability is also demonstrated and an electro-optic frequency response with a 3-dB modulation bandwidth of ∼30.5 GHz is measured. The use of the fabricated MDR for the implementation of an electrically tunable optical delay-line and a tunable fractional-order temporal photonic differentiator is demonstrated.

Dosimetric characteristics of a new unshielded silicon diode and its application in clinical photon and electron beams

International Nuclear Information System (INIS)

Griessbach, Irmgard; Lapp, Markus; Bohsung, Joerg; Gademann, Guenther; Harder, Dietrich

2005-01-01

Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield

Simulation results for PLATO: a prototype hybrid X-ray photon counting detector with a low energy threshold for fusion plasma diagnostics

International Nuclear Information System (INIS)

Habib, A.; Menouni, M.; Pangaud, P.; Morel, C.; Fenzi, C.; Colledani, G.; Moureau, G.; Escarguel, A.

2017-01-01

PLATO is a prototype hybrid X-ray photon counting detector that has been designed to meet the specifications for plasma diagnostics for the WEST tokamak platform (Tungsten (W) Environment in Steady-state Tokamak) in southern France, with potential perspectives for ITER. PLATO represents a customized solution that fulfills high sensitivity, low dispersion and high photon counting rate. The PLATO prototype matrix is composed of 16 × 18 pixels with a 70 μm pixel pitch. New techniques have been used in analog sensitive blocks to minimize noise coupling through supply rails and substrate, and to suppress threshold dispersion across the matrix. The PLATO ASIC is designed in CMOS 0.13 μm technology and was submitted for a fabrication run in June 2016. The chip is designed to be bump-bonded to a silicon sensor. This paper presents pixel architecture as well as simulation results while highlighting novel solutions.

Nanostructured Porous Silicon: The Winding Road from Photonics to Cell Scaffolds – A Review

Science.gov (United States)

Hernández-Montelongo, Jacobo; Muñoz-Noval, Alvaro; García-Ruíz, Josefa Predestinación; Torres-Costa, Vicente; Martín-Palma, Raul J.; Manso-Silván, Miguel

2015-01-01

For over 20 years, nanostructured porous silicon (nanoPS) has found a vast number of applications in the broad fields of photonics and optoelectronics, triggered by the discovery of its photoluminescent behavior in 1990. Besides, its biocompatibility, biodegradability, and bioresorbability make porous silicon (PSi) an appealing biomaterial. These properties are largely a consequence of its particular susceptibility to oxidation, leading to the formation of silicon oxide, which is readily dissolved by body fluids. This paper reviews the evolution of the applications of PSi and nanoPS from photonics through biophotonics, to their use as cell scaffolds, whether as an implantable substitute biomaterial, mainly for bony and ophthalmological tissues, or as an in vitro cell conditioning support, especially for pluripotent cells. For any of these applications, PSi/nanoPS can be used directly after synthesis from Si wafers, upon appropriate surface modification processes, or as a composite biomaterial. Unedited studies of fluorescently active PSi structures for cell culture are brought to evidence the margin for new developments. PMID:26029688

Hybrid photonic-crystal fiber

Science.gov (United States)

Markos, Christos; Travers, John C.; Abdolvand, Amir; Eggleton, Benjamin J.; Bang, Ole

2017-10-01

This article offers an extensive survey of results obtained using hybrid photonic-crystal fibers (PCFs) which constitute one of the most active research fields in contemporary fiber optics. The ability to integrate novel and functional materials in solid- and hollow-core PCFs through various postprocessing methods has enabled new directions toward understanding fundamental linear and nonlinear phenomena as well as novel application aspects, within the fields of optoelectronics, material and laser science, remote sensing, and spectroscopy. Here the recent progress in the field of hybrid PCFs is reviewed from scientific and technological perspectives, focusing on how different fluids, solids, and gases can significantly extend the functionality of PCFs. The first part of this review discusses the efforts to develop tunable linear and nonlinear fiber-optic devices using PCFs infiltrated with various liquids, glasses, semiconductors, and metals. The second part concentrates on recent and state-of-the-art advances in the field of gas-filled hollow-core PCFs. Extreme ultrafast gas-based nonlinear optics toward light generation in the extreme wavelength regions of vacuum ultraviolet, pulse propagation, and compression dynamics in both atomic and molecular gases, and novel soliton-plasma interactions are reviewed. A discussion of future prospects and directions is also included.

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

Science.gov (United States)

Chiles, Jeff; Nader, Nima; Hickstein, Daniel D.; Yu, Su Peng; Briles, Travis Crain; Carlson, David; Jung, Hojoong; Shainline, Jeffrey M.; Diddams, Scott; Papp, Scott B.; Nam, Sae Woo; Mirin, Richard P.

2018-04-01

We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\\times 10^6 $ at 1552 nm, and $>1.2\\times 10^6$ throughout $\\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

Ultra-fast photon counting with a passive quenching silicon photomultiplier in the charge integration regime

Science.gov (United States)

Zhang, Guoqing; Lina, Liu

2018-02-01

An ultra-fast photon counting method is proposed based on the charge integration of output electrical pulses of passive quenching silicon photomultipliers (SiPMs). The results of the numerical analysis with actual parameters of SiPMs show that the maximum photon counting rate of a state-of-art passive quenching SiPM can reach ~THz levels which is much larger than that of the existing photon counting devices. The experimental procedure is proposed based on this method. This photon counting regime of SiPMs is promising in many fields such as large dynamic light power detection.

Hybrid photonic-crystal fiber

DEFF Research Database (Denmark)

Markos, Christos; Travers, John C.; Abdolvand, Amir

2017-01-01

This article offers an extensive survey of results obtained using hybrid photonic-crystal fibers (PCFs) which constitute one of the most active research fields in contemporary fiber optics. The ability to integrate novel and functional materials in solid- and hollow-core PCFs through various...... is reviewed from scientific and technological perspectives, focusing on how different fluids, solids, and gases can significantly extend the functionality of PCFs. The first part of this review discusses the efforts to develop tunable linear and nonlinear fiber-optic devices using PCFs infiltrated...... with various liquids, glasses, semiconductors, and metals. The second part concentrates on recent and state-of-the-art advances in the field of gas-filled hollow-core PCFs. Extreme ultrafast gas-based nonlinear optics toward light generation in the extreme wavelength regions of vacuum ultraviolet, pulse...

Broadband and scalable optical coupling for silicon photonics using polymer waveguides

Science.gov (United States)

La Porta, Antonio; Weiss, Jonas; Dangel, Roger; Jubin, Daniel; Meier, Norbert; Horst, Folkert; Offrein, Bert Jan

2018-04-01

We present optical coupling schemes for silicon integrated photonics circuits that account for the challenges in large-scale data processing systems such as those used for emerging big data workloads. Our waveguide based approach allows to optimally exploit the on-chip optical feature size, and chip- and package real-estate. It further scales well to high numbers of channels and is compatible with state-of-the-art flip-chip die packaging. We demonstrate silicon waveguide to polymer waveguide coupling losses below 1.5 dB for both the O- and C-bands with a polarisation dependent loss of <1 dB. Over 100 optical silicon waveguide to polymer waveguide interfaces were assembled within a single alignment step, resulting in a physical I/O channel density of up to 13 waveguides per millimetre along the chip-edge, with an average coupling loss of below 3.4 dB measured at 1310 nm.

On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits.

Science.gov (United States)

Elshaari, Ali W; Zadeh, Iman Esmaeil; Fognini, Andreas; Reimer, Michael E; Dalacu, Dan; Poole, Philip J; Zwiller, Val; Jöns, Klaus D

2017-08-30

Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.

Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications

Science.gov (United States)

Lourdudoss, Sebastian; Junesand, Carl; Kataria, Himanshu; Metaferia, Wondwosen; Omanakuttan, Giriprasanth; Sun, Yan-Ting; Wang, Zhechao; Olsson, Fredrik

2017-02-01

We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

Directory of Open Access Journals (Sweden)

Iraj S. Amiri

2018-06-01

Full Text Available A three-dimensional (3-D finite-difference-time-domain (FDTD analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm, the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm atomic layers of the graphene grate. Keywords: Optical waveguide, Silicon waveguide, Grate, Graphene, Optical transmissivity

Compact high-efficiency vortex beam emitter based on a silicon photonics micro-ring

DEFF Research Database (Denmark)

Li, Shimao; Ding, Yunhong; Guan, Xiaowei

2018-01-01

Photonic integrated devices that emit vortex beam carrying orbital angular momentum are becoming key components for multiple applications. Here we propose and demonstrate a high-efficiency vortex beam emitter based on a silicon micro-ring resonator integrated with a metal mirror. Such a compact...

Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion

Science.gov (United States)

Rong, Youying; Ma, Jianhui; Chen, Lingxiao; Liu, Yan; Siyushev, Petr; Wu, Botao; Pan, Haifeng; Jelezko, Fedor; Wu, E.; Zeng, Heping

2018-05-01

We report a method with high time resolution to measure the excited-state lifetime of silicon vacancy centers in bulk diamond avoiding timing jitter from the single-photon detectors. Frequency upconversion of the fluorescence emitted from silicon vacancy centers was achieved from 738 nm to 436 nm via sum frequency generation with a short pump pulse. The excited-state lifetime can be obtained by measuring the intensity of upconverted light while the pump delay changes. As a probe, a pump laser with pulse duration of 11 ps provided a high temporal resolution of the measurement. The lifetime extracted from the pump–probe curve was 0.755 ns, which was comparable to the timing jitter of the single-photon detectors.

Hybrid luminescent/magnetic nanostructured porous silicon particles for biomedical applications

Science.gov (United States)

Muñoz-Noval, Álvaro; Sánchez-Vaquero, Vanessa; Torres-Costa, Vicente; Gallach, Darío; Ferro-Llanos, Vicente; Javier Serrano, José; Manso-Silván, Miguel; García-Ruiz, Josefa Predestinación; Del Pozo, Francisco; Martín-Palma, Raúl J.

2011-02-01

This work describes a novel process for the fabrication of hybrid nanostructured particles showing intense tunable photoluminescence and a simultaneous ferromagnetic behavior. The fabrication process involves the synthesis of nanostructured porous silicon (NPSi) by chemical anodization of crystalline silicon and subsequent in pore growth of Co nanoparticles by electrochemically-assisted infiltration. Final particles are obtained by subsequent sonication of the Co-infiltrated NPSi layers and conjugation with poly(ethylene glycol) aiming at enhancing their hydrophilic character. These particles respond to magnetic fields, emit light in the visible when excited in the UV range, and internalize into human mesenchymal stem cells with no apoptosis induction. Furthermore, cytotoxicity in in-vitro systems confirms their biocompatibility and the viability of the cells after incorporation of the particles. The hybrid nanostructured particles might represent powerful research tools as cellular trackers or in cellular therapy since they allow combining two or more properties into a single particle.

Silicon Photonics towards Disaggregation of Resources in Data Centers

Directory of Open Access Journals (Sweden)

Miltiadis Moralis-Pegios

2018-01-01

Full Text Available In this paper, we demonstrate two subsystems based on Silicon Photonics, towards meeting the network requirements imposed by disaggregation of resources in Data Centers. The first one utilizes a 4 × 4 Silicon photonics switching matrix, employing Mach Zehnder Interferometers (MZIs with Electro-Optical phase shifters, directly controlled by a high speed Field Programmable Gate Array (FPGA board for the successful implementation of a Bloom-Filter (BF-label forwarding scheme. The FPGA is responsible for extracting the BF-label from the incoming optical packets, carrying out the BF-based forwarding function, determining the appropriate switching state and generating the corresponding control signals towards conveying incoming packets to the desired output port of the matrix. The BF-label based packet forwarding scheme allows rapid reconfiguration of the optical switch, while at the same time reduces the memory requirements of the node’s lookup table. Successful operation for 10 Gb/s data packets is reported for a 1 × 4 routing layout. The second subsystem utilizes three integrated spiral waveguides, with record-high 2.6 ns/mm2, delay versus footprint efficiency, along with two Semiconductor Optical Amplifier Mach-Zehnder Interferometer (SOA-MZI wavelength converters, to construct a variable optical buffer and a Time Slot Interchange module. Error-free on-chip variable delay buffering from 6.5 ns up to 17.2 ns and successful timeslot interchanging for 10 Gb/s optical packets are presented.

Stabilization and operation of porous silicon photonic structures from near-ultraviolet to near-infrared using high-pressure water vapor annealing

International Nuclear Information System (INIS)

Gelloz, Bernard; Koshida, Nobuyoshi

2010-01-01

The effects of high-pressure water vapor annealing (HWA), electrochemical oxidation, and substrate resistivity on the properties of porous silicon Bragg mirrors and photoluminescent cavities have been investigated. The photonic structures treated by HWA show very good stability upon ageing in air whereas as-formed structures exhibit significant drifts in their optical properties. Using HWA with lightly doped porous silicon, the structure transparency is enhanced sufficiently to enable the possible photonic operation in the near-ultraviolet. However, the index contrast achievable with these structures is very low in the visible and near-infrared. Useful index contrasts in this range can be achieved with either lightly doped porous silicon treated by electrochemical oxidation and HWA or heavily doped porous silicon treated by HWA.

Deep and tapered silicon photonic crystals for achieving anti-reflection and enhanced absorption.

Science.gov (United States)

Hung, Yung-Jr; Lee, San-Liang; Coldren, Larry A

2010-03-29

Tapered silicon photonic crystals (PhCs) with smooth sidewalls are realized using a novel single-step deep reactive ion etching. The PhCs can significantly reduce the surface reflection over the wavelength range between the ultra-violet and near-infrared regions. From the measurements using a spectrophotometer and an angle-variable spectroscopic ellipsometer, the sub-wavelength periodic structure can provide a broad and angular-independent antireflective window in the visible region for the TE-polarized light. The PhCs with tapered rods can further reduce the reflection due to a gradually changed effective index. On the other hand, strong optical resonances for TM-mode can be found in this structure, which is mainly due to the existence of full photonic bandgaps inside the material. Such resonance can enhance the optical absorption inside the silicon PhCs due to its increased optical paths. With the help of both antireflective and absorption-enhanced characteristics in this structure, the PhCs can be used for various applications.

Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

Science.gov (United States)

Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

2017-01-01

Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light–matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW−1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10–90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater. PMID:28181531

Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

International Nuclear Information System (INIS)

Verkhovtseva, A. V.; Gergel, V. A.

2009-01-01

Statistical fluctuations of the avalanche's multiplication efficiency were studied as applied to the single-photon (Geiger) mode of avalanche photodiodes. The distribution function of partial multiplication factors with an anomalously wide (of the order of the average) dispersion was obtained. Expressions for partial feedback factors were derived in terms of the average gain and the corresponding dependences on the diode's overvoltage were calculated. Final expressions for the photon-electric pulse's conversion were derived by averaging corresponding formulas over the coordinate of initiating photoelectron generation using the functions of optical photon absorption in silicon.

Optical properties of phosphorescent nano-silicon electrochemically doped with terbium

Energy Technology Data Exchange (ETDEWEB)

Gelloz, Bernard [Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Mentek, Romain; Koshida, Nobuyoshi [Tokyo University A and T, 2-24-16 Nakacho, Koganei, Tokyo 184-8588 (Japan)

2012-12-15

Hybrid thin films consisting of oxidized nano-silicon doped with terbium have been fabricated. Nano-silicon was formed by electrochemical etching of silicon wafers. Terbium was incorporated into nano-silicon pores by electrochemical deposition. Different oxidizing thermal treatments were applied to the films. The samples treated by high-pressure water vapor annealing (HWA) exhibited strong blue emission with a phosphorescent component, as previously reported by our group. The low temperature (260 C) HWA also led to strong emission from Tb{sup 3+} ions, whereas typical high temperature (900 C) treatment generally used to activate Tb{sup 3+} ions in silicon-based materials led to less luminescent samples. Spectroscopic and dynamic analyses suggest that terbium was incorporated as a separate oxide phase in the pores of the porous nano-silicon. The PL of the terbium phase and nano-silicon phase exhibit different temperature and excitation power dependences suggesting little optical or electronic interaction between the two phases. The luminescence of terbium is better activated at low temperature (260 C) than at high temperature (900 C). The hybrid material may find some applications in photonics, for instance as a display material. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Hybrid entanglement swapping of photons: Creating the orbital angular momentum Bell states and Greenberger-Horne-Zeilinger states

International Nuclear Information System (INIS)

Chen Lixiang; She Weilong

2011-01-01

Twisted photons offer a high-dimensional Hilbert space with the degree of freedom of orbital angular momentum (OAM). Entanglement swapping allows entangling photons that never interact. We report in this paper the hybrid entanglement swapping from multiphoton spin-entangled states to multiphoton OAM entangled states with the aid of N-pair hybrid spin-OAM entangled photons. Our scheme provides a feasible method for creating the two-photon OAM Bell states (N=2) or multiphoton multidimensional OAM Greenberger-Horne-Zeilinger states (N≥3). We highlight the advantage of multiparticle, multidimensional entangled states in some applications of quantum information protocols.

THz waveguides, devices and hybrid polymer-chalcogenide photonic crystal fibers

DEFF Research Database (Denmark)

Bao, Hualong; Markos, Christos; Nielsen, Kristian

2014-01-01

In this contribution, we review our recent activities in the design, fabrication and characterization of polymer THz waveguides. Besides the THz waveguides, we finally will also briefly show some of our initial results on a novel hybrid polymer photonic crystal fiber with integrated chalcogenide...

Analysis of single-photon time resolution of FBK silicon photomultipliers

International Nuclear Information System (INIS)

Acerbi, Fabio; Ferri, Alessandro; Gola, Alberto; Zorzi, Nicola; Piemonte, Claudio

2015-01-01

We characterized and analyzed an important feature of silicon photomultipliers: the single-photon time resolution (SPTR). We characterized the SPTR of new RGB (Red–Green–Blue) type Silicon Photomultipliers and SPADs produced at FBK (Trento, Italy), studying its main limiting factors. We compared time resolution of 1×1 mm 2 and 3×3 mm 2 SiPMs and a single SiPM cell (i.e. a SPAD with integrated passive-quenching), employing a mode-locked pulsed laser with 2-ps wide pulses. We estimated the contribution of front-end electronic-noise, of cell-to-cell uniformity, and intrinsic cell time-resolution. At a single-cell level, we compared the results obtained with different layouts. With a circular cell with a top metallization covering part of the edge and enhancing the signal extraction, we reached ~20 ps FWHM of time resolution

Estimation of Future Demand for Neutron-Transmutation-Doped Silicon Caused by Development of Hybrid Electric Vehicle

International Nuclear Information System (INIS)

Kim, Myong Seop; Park, Sang Jun

2008-01-01

By using this doping method, silicon semiconductors with an extremely uniform dopant distribution can be produced. They are usually used for high power devices such as thyristor (SCR), IGBT, IGCT and GTO. Now, the demand for high power semiconductor devices has increased rapidly due to the rapid increase of the green energy technologies. Among them, the productions of hybrid cars or fuel cell engines are excessively increased to reduce the amount of discharged air pollution substances, such as carbon dioxide which causes global warming. It is known that the neutron-transmutation-doped floating-zone (FZ) silicon wafers are used in insulated-gate bipolar transistors (IGBTs) which control the speed of the electric traction motors equipped in hybrid or fuel cell vehicles. Therefore, inevitably, it can be supposed that the demand of the NTD silicon is considerably increased. However, it is considered likely that the irradiation capacity will not be large enough to meet the increasing demand. After all, the large irradiation capacity for NTD such as a reactor dedicated to the silicon irradiation will be constructed depending on the industrial demand for NTD silicon. In this work, we investigated the relationship between the hybrid electric vehicle (HEV) industry and the NTD silicon production. Also, we surveyed the prospect for the production of the HEV. Then, we deduced the worldwide demand for the NTD silicon associated with the HEV production. This work can be utilized as the basic material for the construction of the new irradiation facility such as NTD-dedicated neutron source

Quantum Efficiency of Hybrid Photon Detectors for the LHCb RICH

CERN Document Server

Lambert, R W

2008-01-01

The production of Hybrid Photon Detectors to be used as the single-photon sensors for the RICH detectors of the LHCb experiment has recently finished. We present the quantum efficiency measurements of the entire sample of 550 tubes. The manufacturer has succeeded in consistently improving the quantum efficiency of the employed S20-type multi-alkali photocathode above our expectations, by a relative 27 % integrated over the energy spectrum. We also report measurements of the vacuum quality using the photocurrent of the device as a monitor for possible vacuum degradation.

Cascaded Mach-Zehnder wavelength filters in silicon photonics for low loss and flat pass-band WDM (de-)multiplexing.

Science.gov (United States)

Horst, Folkert; Green, William M J; Assefa, Solomon; Shank, Steven M; Vlasov, Yurii A; Offrein, Bert Jan

2013-05-20

We present 1-to-8 wavelength (de-)multiplexer devices based on a binary tree of cascaded Mach-Zehnder-like lattice filters, and manufactured using a 90 nm CMOS-integrated silicon photonics technology. We demonstrate that these devices combine a flat pass-band over more than 50% of the channel spacing with low insertion loss of less than 1.6 dB, and have a small device size of approximately 500 × 400 µm. This makes this type of filters well suited for application as WDM (de-)multiplexer in silicon photonics transceivers for optical data communication in large scale computer systems.

Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

International Nuclear Information System (INIS)

Zhang, Xingyu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chakravarty, Swapnajit; Chen, Ray T.

2015-01-01

We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB

Tailoring the Optical Properties of Silicon with Ion Beam Created Nanostructures for Advanced Photonics Applications

Science.gov (United States)

Akhter, Perveen

In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation

International Nuclear Information System (INIS)

Scherf, Christian; Moog, Jussi; Licher, Joerg; Kara, Eugen; Roedel, Claus; Ramm, Ulla; Peter, Christiane; Zink, Klemens

2009-01-01

Background: Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. Material and Methods: The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm 3 thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. Results: The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm 2 because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Conclusion: Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector. (orig.)

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

Science.gov (United States)

Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

2009-08-01

Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

Science.gov (United States)

Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

2009-01-05

We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

Complete Bell-state analysis for a single-photon hybrid entangled state

International Nuclear Information System (INIS)

Sheng Yu-Bo; Zhou Lan; Cheng Wei-Wen; Gong Long-Yan; Wang Lei; Zhao Sheng-Mei

2013-01-01

We propose a scheme capable of performing complete Bell-state analysis for a single-photon hybrid entangled state. Our single-photon state is encoded in both polarization and frequency degrees of freedom. The setup of the scheme is composed of polarizing beam splitters, half wave plates, frequency shifters, and independent wavelength division multiplexers, which are feasible using current technology. We also show that with this setup we can perform complete two-photon Bell-state analysis schemes for polarization degrees of freedom. Moreover, it can also be used to perform the teleportation scheme between different degrees of freedom. This setup may allow extensive applications in current quantum communications

Intermodal parametric gain of degenerate four wave mixing in large mode area hybrid photonic crystal fibers

DEFF Research Database (Denmark)

Petersen, Sidsel Rübner; Lægsgaard, Jesper; Alkeskjold, Thomas Tanggaard

2013-01-01

Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process.......Intermodal degenerate four wave mixing (FWM) is investigated numerically in large mode area hybrid photonic crystal fibers. The dispersion is controlled independently of core size, and thus allows for power scaling of the FWM process....

Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

Directory of Open Access Journals (Sweden)

Konstantinos Pantzas

2015-10-01

Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

CERN Document Server

Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

2000-01-01

Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

Six-beam homodyne laser Doppler vibrometry based on silicon photonics technology.

Science.gov (United States)

Li, Yanlu; Zhu, Jinghao; Duperron, Matthieu; O'Brien, Peter; Schüler, Ralf; Aasmul, Soren; de Melis, Mirko; Kersemans, Mathias; Baets, Roel

2018-02-05

This paper describes an integrated six-beam homodyne laser Doppler vibrometry (LDV) system based on a silicon-on-insulator (SOI) full platform technology, with on-chip photo-diodes and phase modulators. Electronics and optics are also implemented around the integrated photonic circuit (PIC) to enable a simultaneous six-beam measurement. Measurement of a propagating guided elastic wave in an aluminum plate (speed ≈ 909 m/s @ 61.5 kHz) is demonstrated.

Silicon-germanium and platinum silicide nanostructures for silicon based photonics

Science.gov (United States)

Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

2017-05-01

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

Ultra-compact broadband higher order-mode pass filter fabricated in a silicon waveguide for multimode photonics

DEFF Research Database (Denmark)

Guan, Xiaowei; Ding, Yunhong; Frandsen, Lars Hagedorn

2015-01-01

An ultra-compact and broadband higher order-mode pass filter in a 1D photonic crystal silicon waveguide is proposed and experimentally demonstrated. The photonic crystal is designed for the lower order mode to work in the photonic band gap, while the higher order mode is located in the air band....... Consequently, light on the lower order mode is prohibited to pass through the filter, while light on a higher order mode can be converted to a Bloch mode in the photonic crystal and pass through the filter with low insertion loss. As an example, we fabricate a similar to 15-mu m-long first-order-mode pass...

Analysis of single-photon time resolution of FBK silicon photomultipliers

Energy Technology Data Exchange (ETDEWEB)

Acerbi, Fabio, E-mail: acerbi@fbk.eu; Ferri, Alessandro; Gola, Alberto; Zorzi, Nicola; Piemonte, Claudio

2015-07-01

We characterized and analyzed an important feature of silicon photomultipliers: the single-photon time resolution (SPTR). We characterized the SPTR of new RGB (Red–Green–Blue) type Silicon Photomultipliers and SPADs produced at FBK (Trento, Italy), studying its main limiting factors. We compared time resolution of 1×1 mm{sup 2} and 3×3 mm{sup 2} SiPMs and a single SiPM cell (i.e. a SPAD with integrated passive-quenching), employing a mode-locked pulsed laser with 2-ps wide pulses. We estimated the contribution of front-end electronic-noise, of cell-to-cell uniformity, and intrinsic cell time-resolution. At a single-cell level, we compared the results obtained with different layouts. With a circular cell with a top metallization covering part of the edge and enhancing the signal extraction, we reached ~20 ps FWHM of time resolution.

Efficient Fluorescence Resonance Energy Transfer between Quantum Dots and Gold Nanoparticles Based on Porous Silicon Photonic Crystal for DNA Detection.

Science.gov (United States)

Zhang, Hongyan; Lv, Jie; Jia, Zhenhong

2017-05-10

A novel assembled biosensor was prepared for detecting 16S rRNA, a small-size persistent specific for Actinobacteria. The mechanism of the porous silicon (PS) photonic crystal biosensor is based on the fluorescence resonance energy transfer (FRET) between quantum dots (QDs) and gold nanoparticles (AuNPs) through DNA hybridization, where QDs act as an emission donor and AuNPs serve as a fluorescence quencher. Results showed that the photoluminescence (PL) intensity of PS photonic crystal was drastically increased when the QDs-conjugated probe DNA was adhered to the PS layer by surface modification using a standard cross-link chemistry method. The PL intensity of QDs was decreased when the addition of AuNPs-conjugated complementary 16S rRNA was dropped onto QDs-conjugated PS. Based on the analysis of different target DNA concentration, it was found that the decrease of the PL intensity showed a good linear relationship with complementary DNA concentration in a range from 0.25 to 10 μM, and the detection limit was 328.7 nM. Such an optical FRET biosensor functions on PS-based photonic crystal for DNA detection that differs from the traditional FRET, which is used only in liquid. This method will benefit the development of a new optical FRET label-free biosensor on Si substrate and has great potential in biochips based on integrated optical devices.

Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

High Power Broadband Multispectral Source on a Hybrid Silicon Chip

Science.gov (United States)

2017-03-14

optical bandwidth of the erbium-doped- fiber -amplifier with densely-spaced frequency channels. To extend the spectral capacity of the Si-on-insulator...associated with non-uniform undercut at the taper tip across the chip after wet etching the active region. Figure 14. Normalized optical emission...Hutchinson, J., Shin, J.-H., Fish, G., and Fang, A., “Integrated silicon photonic laser sources for telecom and datacom,” in [National Fiber Optic

Raman scattering enhancement in photon-plasmon resonance mediated metal-dielectric microcavity

International Nuclear Information System (INIS)

Guddala, Sriram; Narayana Rao, D.; Dwivedi, Vindesh K.; Vijaya Prakash, G.

2013-01-01

Here, we report the photon-plasmon interaction scheme and enhanced field strengths resulted into the amplification of phonon in a novel microcavity. A metal-dielectric microcavity, with unified cavity photonic mode and localized surface plasmon resonances, is visualized by impregnating the gold nanoparticles into the deep see-through nano-sized pores of porous silicon microcavity. The intense optical field strengths resulting from the photon-plasmon interactions are probed by both resonant and non-resonant Raman scattering experiments. Due to photon-plasmon-phonon interaction mechanism, several orders of enhancement in the intensity of scattered Raman Stokes photon (at 500 cm −1 ) are observed. Our metal nanoparticle-microcavity hybrid system shows the potential to improve the sensing figure of merit as well as the applications of plasmonics for optoelectronics, photovoltaics, and related technologies

Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

Integrated programmable photonic filter on the silicon -on- insulator platform

DEFF Research Database (Denmark)

Liao, Shasha; Ding, Yunhong; Peucheret, Christophe

2014-01-01

We propose and demonstrate a silicon - on - insulator (SOI) on - chip programmable filter based on a four - tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heater s. We further demonstrate...... the tunability of the filter central wavelength, bandwidth and variable passband shape. The tuning range of the central wavelength is at least 42% of the free spectral range. The bandwidth tuning range is at least half of the free spectral range. Our scheme has distinct advantages of compactness, capability...

Radiation Hard Silicon Photonics Mach-Zehnder Modulator for HEP applications: all-Synopsys Sentaurus™ Pre-Irradiation Simulation

CERN Document Server

Cammarata, Simone

2017-01-01

Silicon Photonics may well provide the opportunity for new levels of integration between detectors and their readout electronics. This technology is thus being evaluated at CERN in order to assess its suitability for use in particle physics experiments. In order to check the agreement with measurements and the validity of previous device simulations, a pure Synopsys Sentaurus™ simulation of an un-irradiated Mach-Zehnder silicon modulator has been carried out during the Summer Student project.

Use of epitaxial silicon diodes in photon dosimetry

International Nuclear Information System (INIS)

Pereira, Lilian Nunes

2013-01-01

In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from 60 Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 10 4 higher than the lowest photocurrents measured. The directional response of both

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids

International Nuclear Information System (INIS)

Strobel, Sebastian; Hernandez, Rocio Murcia; Hansen, Allan G; Tornow, Marc

2008-01-01

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10 -18 farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids

Energy Technology Data Exchange (ETDEWEB)

Strobel, Sebastian; Hernandez, Rocio Murcia [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Hansen, Allan G; Tornow, Marc [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany)], E-mail: m.tornow@tu-bs.de

2008-09-17

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10{sup -18} farad and asymmetric resistances of 30 and 300 M{omega}, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids.

Science.gov (United States)

Strobel, Sebastian; Hernández, Rocío Murcia; Hansen, Allan G; Tornow, Marc

2008-09-17

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10(-18) farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

Hybrid plasmonic bullseye antennas for efficient photon collection

DEFF Research Database (Denmark)

Andersen, Sebastian Kim Hjælm; Bozhevolnyi, Sergey I.; Shalaev, Vladimir M.

2018-01-01

We propose highly efficient hybrid plasmonic bullseye antennas for collecting photon emission from nm sized quantum emitters. In our approach, the emitter radiation is coupled to surface plasmon polaritons that are consequently converted into highly directional out-of-plane emission. The proposed...... configuration consists of a high-index titania bullseye grating separated from a planar silver film by a thin low-index silica spacer layer. Such hybrid systems are theoretically capable of directing 85% of the dipole emission into a 0.9 NA objective, while featuring a spectrally narrow-band tunable decay rate...... stable operation. For experimental characterization of the antenna properties, a fluorescent nanodiamond containing multiple nitrogen vacancy centers (NV-center) was deterministically placed in the bullseye center, using an atomic force microscope. Probing the NV-center fluorescence we demonstrate...

Compact Low-Power-Consumption 28-Gbaud QPSK/16-QAM Integrated Silicon Photonic/Electronic Coherent Receiver

NARCIS (Netherlands)

Zhang, J.; Verbist, J.; Moeneclaey, B.; van Weerdenburg, J.; van Uden, R.G.H.; Chen, H.; van Campenhout, J.; Okonkwo, C; Yin, X; Bauwelinck, J.; Roelkens, G.

2016-01-01

We demonstrate the codesign and cointegration of an ultracompact silicon photonic receiver and a low-power-consumption (155 mW/channel) two-channel linear transimpedance amplifier array. Operation below the forward error coding (FEC) threshold both for quadrature phase-shift keying (QPSK) and

Tunable complex-valued multi-tap microwave photonic filter based on single silicon-oninsulator microring resonator

DEFF Research Database (Denmark)

Lloret, Juan; Sancho, Juan; Pu, Minhao

2011-01-01

A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonator is presented. The degree of tunability of the approach involving two, three and four taps is theoretical and experimentally characterized, respectively. The constraints of exploit...

Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

Science.gov (United States)

Amiri, Iraj S.; Ariannejad, M. M.; Jalil, M. A.; Ali, J.; Yupapin, P.

2018-06-01

A three-dimensional (3-D) finite-difference-time-domain (FDTD) analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm), the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm) atomic layers of the graphene grate.

Towards micro-assembly of hybrid MOEMS components on a reconfigurable silicon free-space micro-optical bench

International Nuclear Information System (INIS)

Bargiel, S; Gorecki, C; Rabenorosoa, K; Clévy, C; Lutz, P

2010-01-01

The 3D integration of hybrid chips is a viable approach for the micro-optical technologies to reduce the costs of assembly and packaging. In this paper a technology platform for the hybrid integration of MOEMS components on a reconfigurable silicon free-space micro-optical bench (FS-MOB) is presented. In this approach a desired optical component (e.g. micromirror, microlens) is integrated with a removable and adjustable silicon holder which can be manipulated, aligned and fixed in the precisely etched rail of the silicon baseplate by use of a robotic micro-assembly station. An active-based gripping system allows modification of the holder position on the baseplate with nanometre precision. The fabrication processes of the micromachined parts of the micro-optical bench, based on bulk micromachining of standard silicon wafer and SOI wafer, are described. The successful assembly of the holders, equipped with a micromirror and a refractive glass ball microlens, on the baseplate rail is demonstrated.

X-ray imaging with photon counting hybrid semiconductor pixel detectors

CERN Document Server

Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

1999-01-01

Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

Imaging Hybrid Photon Detectors with a Reflective Photocathode

CERN Document Server

Ferenc, D

2000-01-01

Modern epitaxially grown photocathodes, like GaAsP, bring a very high inherent quantum efficiency, but are rather expensive due to the complicated manufacturing and mounting process. We argue that such photocathodes could be used in reflective mode, in order to avoid the risky and expensive removal of the epitaxial growth substrate. Besides that the quantum efficiency should increase considerably. In this paper we present results of the development of large imaging Hybrid Photon Detectors (HPDs), particularly designed for such reflective photocathodes.

Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

Science.gov (United States)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

2014-03-01

The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

LHCb: Quantum Efficiency of Hybrid Photon Detectors for the LHCb RICH

CERN Multimedia

Lambert, Robert W

2007-01-01

The production of 550 hybrid photon detectors to be used within the LHCb RICH detectors has recently finished. Photonis-DEP have succeeded in consistently improving the tube quantum efficiency, by a relative 27,% with respect to preseries and prototype tubes, when integrated over the energy spectrum.

First observation of Cherenkov ring images using hybrid photon detectors

International Nuclear Information System (INIS)

Albrecht, E.; Wilkinson, G.; Bibby, J.H.; Giles, R.; Harnew, N.; Smale, N.; Brook, N.H.; Halley, A.W.; O'Shea, V.; French, M.; Gibson, V.; Wotton, S.A.; Schomaker, R.

1998-01-01

A ring-imaging Cherenkov detector, equipped with hybrid photon detectors, has been operated in a charged-particle beam. Focussed ring images from various particle types were detected using silica aerogel, air and C 4 F 10 gas radiators. The detector, a prototype for the CERN LHC-B experiment, is described and first observations are reported. (orig.)

First observation of Cherenkov ring images using hybrid photon detectors

Energy Technology Data Exchange (ETDEWEB)

Albrecht, E.; Wilkinson, G. [European Organization for Nuclear Research, Geneva (Switzerland). Div. Particle Physics Experiments; Barber, G.; Duane, A.; John, M.; Miller, D.G.; Websdale, D. [Imperial College of Science Technology and Medicine, Blackett Laboratory, Prince Consort Road, London SW7 2AZ (United Kingdom); Bibby, J.H.; Giles, R.; Harnew, N.; Smale, N. [University of Oxford, Department of Nuclear Physics, Keble Road, Oxford OX1 3RH (United Kingdom); Brook, N.H.; Halley, A.W.; O`Shea, V. [University of Glasgow, Department of Physics, Glasgow G12 8QQ (United Kingdom); French, M. [Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom); Gibson, V.; Wotton, S.A. [University of Cambridge, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE (United Kingdom); Schomaker, R. [Delft Electronic Products BV, 9300 AB Roden (Netherlands)

1998-07-11

A ring-imaging Cherenkov detector, equipped with hybrid photon detectors, has been operated in a charged-particle beam. Focussed ring images from various particle types were detected using silica aerogel, air and C{sub 4}F{sub 10} gas radiators. The detector, a prototype for the CERN LHC-B experiment, is described and first observations are reported. (orig.)

Label-free silicon photonic biosensor system with integrated detector array

Science.gov (United States)

Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

2010-01-01

An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

Experimental demonstration of reservoir computing on a silicon photonics chip

Science.gov (United States)

Vandoorne, Kristof; Mechet, Pauline; van Vaerenbergh, Thomas; Fiers, Martin; Morthier, Geert; Verstraeten, David; Schrauwen, Benjamin; Dambre, Joni; Bienstman, Peter

2014-03-01

In today’s age, companies employ machine learning to extract information from large quantities of data. One of those techniques, reservoir computing (RC), is a decade old and has achieved state-of-the-art performance for processing sequential data. Dedicated hardware realizations of RC could enable speed gains and power savings. Here we propose the first integrated passive silicon photonics reservoir. We demonstrate experimentally and through simulations that, thanks to the RC paradigm, this generic chip can be used to perform arbitrary Boolean logic operations with memory as well as 5-bit header recognition up to 12.5 Gbit s-1, without power consumption in the reservoir. It can also perform isolated spoken digit recognition. Our realization exploits optical phase for computing. It is scalable to larger networks and much higher bitrates, up to speeds >100 Gbit s-1. These results pave the way for the application of integrated photonic RC for a wide range of applications.

Label-free silicon photonic biosensor system with integrated detector array.

Science.gov (United States)

Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

2009-08-07

An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

High coincidence-to-accidental ratio continuous-wave photon-pair generation in a grating-coupled silicon strip waveguide

DEFF Research Database (Denmark)

Guo, Kai; Christensen, Erik Nicolai; Christensen, Jesper Bjerge

2017-01-01

We demonstrate a very high coincidence-to-accidental ratio of 673 using continuous-wave photon-pair generation in a silicon strip waveguide through spontaneous four-wave mixing. This result is obtained by employing on-chip photonic-crystal-based grating couplers for both low-loss fiber......-to-chip coupling and on-chip suppression of generated spontaneous Raman scattering noise. We measure a minimum heralded second-order correlation of g(H)((2)) (0) = 0.12, demonstrating that our source operates in the single- photon regime with low noise. (C) 2017 The Japan Society of Applied Physics...

Two orders of magnitude reduction in silicon membrane thermal conductivity by resonance hybridizations

Science.gov (United States)

Honarvar, Hossein; Hussein, Mahmoud I.

2018-05-01

The thermal conductivity of a freestanding single-crystal silicon membrane may be reduced significantly by attaching nanoscale pillars on one or both surfaces. Atomic resonances of the nanopillars form vibrons that intrinsically couple with the base membrane phonons causing mode hybridization and flattening at each coupling location in the phonon band structure. This in turn causes group velocity reductions of existing phonons, in addition to introducing new modes that get excited but are localized and do not transport energy. The nanopillars also reduce the phonon lifetimes at and around the hybridization zones. These three effects, which in principle may be tuned to take place across silicon's full spectrum, lead to a lowering of the in-plane thermal conductivity in the base membrane. Using equilibrium molecular dynamics simulations, and utilizing the concept of vibrons compensation, we report a staggering two orders of magnitude reduction in the thermal conductivity at room temperature by this mechanism. Specifically, a reduction of a factor of 130 is demonstrated for a roughly 10-nm-thick pillared membrane compared to a corresponding unpillared membrane. This amounts to a record reduction of a factor of 481 compared to bulk crystalline silicon and nearly a factor of 2 compared to bulk amorphous silicon. These results are obtained while providing a path for preserving performance with upscaling.

Silicon photon-counting avalanche diodes for single-molecule fluorescence spectroscopy

Science.gov (United States)

Michalet, Xavier; Ingargiola, Antonino; Colyer, Ryan A.; Scalia, Giuseppe; Weiss, Shimon; Maccagnani, Piera; Gulinatti, Angelo; Rech, Ivan; Ghioni, Massimo

2014-01-01

Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements. PMID:25309114

Silicon photonic IC embedded optical-PCB for high-speed interconnect application

Science.gov (United States)

Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar

2018-02-01

Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.

Broadband enhancement of single photon emission and polarization dependent coupling in silicon nitride waveguides.

Science.gov (United States)

Bisschop, Suzanne; Guille, Antoine; Van Thourhout, Dries; Hens, Zeger; Brainis, Edouard

2015-06-01

Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.

Silicon-organic pigment material hybrids for photovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Mayer, T.; Weiler, U.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstreet 23, D-64287 Darmstadt (Germany); Kelting, C.; Schlettwein, D. [Institute for Applied Physics, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Makarov, S.; Woehrle, D. [Institute of Organic and Macromolecular Chemistry, University Bremen, Leobener Street NW II, D-28359 Bremen (Germany); Abdallah, O.; Kunst, M. [Department Solar Energy, Hahn-Meitner-Institute, D-14109 Berlin (Germany)

2007-12-14

Hybrid materials of silicon and organic dyes have been investigated for possible application as photovoltaic material in thin film solar cells. High conversion efficiency is expected from the combination of the advantages of organic dyes for light absorption and those of silicon for charge carrier separation and transport. Low temperature remote hot wire chemical vapor deposition (HWCVD) was developed for microcrystalline silicon ({mu}c-Si) deposition using SiH{sub 4}/H{sub 2} mixtures. As model dyes zinc phthalocyanines have been evaporated from Knudsen type sources. Layers of dye on {mu}c-Si and {mu}c-Si on dye films, and composites of simultaneously and sequentially deposited Si and dye have been prepared and characterized. Raman, absorption, and photoemission spectroscopy prove the stability of the organic molecules against the rough HWCVD-Si process. Transient microwave conductivity (TRMC) indicates good electronic quality of the {mu}c-Si matrix. Energy transfer from dye to Si is indicated indirectly by luminescence and directly by photoconductivity measurements. F{sub x}ZnPc pigments with x=0,4,8,16 have been synthesized, purified and adsorbed onto H-terminated Si(1 1 1) for electronic state line up determination by photoelectron spectroscopy. For x=4 and 8 the dye frontier orbitals line up symmetrically versus the Si energy gap offering similar energetic driving forces for electron and hole injection, which is considered optimum for bulk sensitization and indicates a direction to improve the optoelectronic coupling of the organic dyes to silicon. (author)

Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

Science.gov (United States)

Driscoll, Jeffrey B.

Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

Extensive tests of Hybrid Photon Detectors (HPD) used to collect Cherenkov light

International Nuclear Information System (INIS)

Borsato, E.; Buccheri, A.; DalCorso, F.; Ferroni, F.; Iacovella, F.; Mazzoni, M.A.; Morandin, M.; Morganti, S.; Piredda, G.; Posocco, M.; Santacesaria, R.; Stroili, R.; Torassa, E.; Voci, C.

1997-01-01

The principle of operation of a newly developed proximity focused Hybrid Photon Detector is described. The HPD characteristics, performance and calibration are reported. Results from beam tests of aerogel threshold counters read out by HPD and the particle identification performance are presented. (orig.)

mm-Wave Hybrid Photonic Wireless Links for Ultra-High Speed Wireless Transmissions

DEFF Research Database (Denmark)

Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

Hybrid photonic-wireless transmission schemes in the mm-wave frequency range are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Large FCC spectrum allocations for wireless transmission...

Polarized photons from a silicon crystal in a 31 GeV electron beam at the Serpukhov proton accelerator

International Nuclear Information System (INIS)

Frolov, A.M.; Maisheev, V.A.; Arakelyan, E.A.; Armaganyan, A.A.; Avakyan, R.O.; Bayatyan, G.L.; Grigoryan, N.K.; Kechechyan, A.O.; Knyazyan, S.G.; Margaryan, A.T.

1980-01-01

Tagged photons coherently emitted in a silicon crystal by the 31 GeV electron beam of intensity 4 x 10 4 ppp and beam pulse duration of up to 1.7 s have been obtained at the Serpukhov proton accelerator. The photon intensities were I approx. 10 -1 - 10 -2 γ/e - in five almost equal energy bins within the total range k = (8.2-24.2) GeV. The calculated linear polarizations were P approx. 50-20%, respectively. Narrow peaks in the radiation intensity were observed when varying the orientation of a silicon crystal which could not be explained. The method for the experimental alignment of a crystal in electron beams at the proton accelerator has been described. (orig.)

Degenerate four wave mixing in large mode area hybrid photonic crystal fibers

DEFF Research Database (Denmark)

Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Lægsgaard, Jesper

2013-01-01

Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump...... wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode...... area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions....

Optical interconnects based on VCSELs and low-loss silicon photonics

Science.gov (United States)

Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

2018-02-01

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

All-fiber hybrid photon-plasmon circuits: integrating nanowire plasmonics with fiber optics.

Science.gov (United States)

Li, Xiyuan; Li, Wei; Guo, Xin; Lou, Jingyi; Tong, Limin

2013-07-01

We demonstrate all-fiber hybrid photon-plasmon circuits by integrating Ag nanowires with optical fibers. Relying on near-field coupling, we realize a photon-to-plasmon conversion efficiency up to 92% in a fiber-based nanowire plasmonic probe. Around optical communication band, we assemble an all-fiber resonator and a Mach-Zehnder interferometer (MZI) with Q-factor of 6 × 10(6) and extinction ratio up to 30 dB, respectively. Using the MZI, we demonstrate fiber-compatible plasmonic sensing with high sensitivity and low optical power.

Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer.

Science.gov (United States)

Li, Chenlei; Dai, Daoxin

2017-11-01

A polarization beam splitter (PBS) is proposed and realized for silicon photonic integrated circuits with a 340-nm-thick silicon core layer by introducing an asymmetric directional coupler (ADC), which consists of a silicon-on-insulator (SOI) nanowire and a subwavelength grating (SWG) waveguide. The SWG is introduced to provide an optical waveguide which has much higher birefringence than a regular 340-nm-thick SOI nanowire, so that it is possible to make the phase-matching condition satisfied for TE polarization only in the present design when the waveguide dimensions are optimized. Meanwhile, there is a significant phase mismatching for TM polarization automatically. In this way, the present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively. The realized PBS has a length of ∼2  μm for the coupling region. For the fabricated PBS, the extinction ratio (ER) is 15-30 dB and the excess loss is 0.2-2.6 dB for TE polarization while the ER is 20-27 dB and the excess loss is 0.3-2.8 dB for TM polarization when operating in the wavelength range of 1520-1580 nm.

Diffusion of interstitial oxygen in silicon and germanium: a hybrid functional study

International Nuclear Information System (INIS)

Colleoni, Davide; Pasquarello, Alfredo

2016-01-01

The minimum-energy paths for the diffusion of an interstitial O atom in silicon and germanium are studied through the nudged-elastic-band method and hybrid functional calculations. The reconsideration of the diffusion of O in silicon primarily serves the purpose of validating the procedure for studying the O diffusion in germanium. Our calculations show that the minimum energy path goes through an asymmetric transition state in both silicon and germanium. The stability of these transition states is found to be enhanced by the generation of unpaired electrons in the highest occupied single-particle states. Calculated energy barriers are 2.54 and 2.14 eV for Si and Ge, in very good agreement with corresponding experimental values of 2.53 and 2.08 eV, respectively. (paper)

Optical properties of organic-silicon photonic crystal nanoslot cavity light source

Directory of Open Access Journals (Sweden)

Ming-Jay Yang

2017-03-01

Full Text Available We theoretically study a dielectric photonic crystal nanoslot cavity immersed in an organic fluid containing near-infrared dyes by means of a full rate equation model including the complete cavity QED effects. Based on the modeling results, we numerically design an organic-silicon cavity light source in which its mode volume, quality factor, and far-field emission pattern are optimized for energy-efficient, high-speed applications. Dye quantum efficiency improved by two orders of magnitude and 3dB modulation bandwidth of a few hundred GHz can be obtained.

Radiation Effects of n-type, Low Resistivity, Spiral Silicon Drift Detector Hybrid Systems

International Nuclear Information System (INIS)

Chen, W.; De Geronimo, G.; Carini, G.A.; Gaskin, J.A.; Keister, J.W.; Li, S.; Li, Z.; Ramsey, B.D.; Siddons, D.P.; Smith, G.C.; Verbitskaya, E.

2011-01-01

We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.

Hybrid photonic-plasmonic near-field probe for efficient light conversion into the nanoscale hot spot.

Science.gov (United States)

Koshelev, Alexander; Munechika, Keiko; Cabrini, Stefano

2017-11-01

In this Letter, we present a design and simulations of the novel hybrid photonic-plasmonic near-field probe. Near-field optics is a unique imaging tool that provides optical images with resolution down to tens of nanometers. One of the main limitations of this technology is its low light sensitivity. The presented hybrid probe solves this problem by combining a campanile plasmonic probe with the photonic layer, consisting of the diffractive optic element (DOE). The DOE is designed to match the plasmonic field at the broad side of the campanile probe with the fiber mode. This makes it possible to optimize the size of the campanile tip to convert light efficiently into the hot spot. The simulations show that the hybrid probe is ∼540 times more efficient compared with the conventional campanile on average in the 600-900 nm spectral range.

Silicon nanocrystal-based photonic crystal slabs with broadband and efficient directional light emission

Czech Academy of Sciences Publication Activity Database

Ondič, Lukáš; Varga, Marián; Pelant, Ivan; Valenta, J.; Kromka, Alexander; Elliman, R. G.

2017-01-01

Roč. 7, č. 1 (2017), s. 1-8, č. článku 5763. ISSN 2045-2322 R&D Projects: GA ČR GJ16-09692Y; GA MŠk(CZ) LD15003 Institutional support: RVO:68378271 Keywords : photonic crystal slab * silicon nanocrystals * light emission Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.259, year: 2016

Test-beam Results from a RICH Detector Prototype Using Aerogel Radiator and Pixel Hybrid Photon Detectors

CERN Document Server

Aglieri-Rinella, G; Van Lysebetten, A; Piedigrossi, D; Wyllie, K; Bellunato, T F; Calvi, M; Matteuzzi, C; Musy, M; Perego, D L; Somerville, L P; Newby, C; Easo, S; Wotton, S

2006-01-01

A test-beam study was performed at CERN with a Ring Imaging Cherenkov (RICH) prototype using three pixel Hybrid Photon Detectors. Results on the photon yield and Cherenkov angle resolution are presented here, for the Aerogel radiator and also for reference runs taken with Nitrogen radiator.

Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

Energy Technology Data Exchange (ETDEWEB)

Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2016-06-20

Generation of photon pairs from compact, manufacturable, and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity, which describes the frequency correlations of the photon pair. Recent attempts to generate a factorizable photon-pair state suitable for heralding have used short optical pump pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared with the Si microchip used for generating photon pairs, and thus dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from an Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a continuous-wave laser diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Science.gov (United States)

Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

2016-01-01

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Prathap Pathi

2017-01-01

Full Text Available Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm and is slightly lower (by ~5% at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm silicon and just 1%–2% for thicker (>100 μm cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

Silicon photonic dynamic optical channel leveler with external feedback loop.

Science.gov (United States)

Doylend, J K; Jessop, P E; Knights, A P

2010-06-21

We demonstrate a dynamic optical channel leveler composed of a variable optical attenuator (VOA) integrated monolithically with a defect-mediated photodiode in a silicon photonic waveguide device. An external feedback loop mimics an analog circuit such that the photodiode directly controls the VOA to provide blind channel leveling within +/-1 dB across a 7-10 dB dynamic range for wavelengths from 1530 nm to 1570 nm. The device consumes approximately 50 mW electrical power and occupies a 6 mm x 0.1 mm footprint per channel. Dynamic leveling is accomplished without tapping optical power from the output path to the photodiode and thus the loss penalty is minimized.

Reconfigurable radio-frequency arbitrary waveforms synthesized in a silicon photonic chip.

Science.gov (United States)

Wang, Jian; Shen, Hao; Fan, Li; Wu, Rui; Niu, Ben; Varghese, Leo T; Xuan, Yi; Leaird, Daniel E; Wang, Xi; Gan, Fuwan; Weiner, Andrew M; Qi, Minghao

2015-01-12

Photonic methods of radio-frequency waveform generation and processing can provide performance advantages and flexibility over electronic methods due to the ultrawide bandwidth offered by the optical carriers. However, bulk optics implementations suffer from the lack of integration and slow reconfiguration speed. Here we propose an architecture of integrated photonic radio-frequency generation and processing and implement it on a silicon chip fabricated in a semiconductor manufacturing foundry. Our device can generate programmable radio-frequency bursts or continuous waveforms with only the light source, electrical drives/controls and detectors being off-chip. It modulates an individual pulse in a radio-frequency burst within 4 ns, achieving a reconfiguration speed three orders of magnitude faster than thermal tuning. The on-chip optical delay elements offer an integrated approach to accurately manipulating individual radio-frequency waveform features without constraints set by the speed and timing jitter of electronics, and should find applications ranging from high-speed wireless to defence electronics.

Effect of silicone gel breast prosthesis on electron and photon dose distributions

International Nuclear Information System (INIS)

Krishnan, L.; St George, F.J.; Mansfield, C.M.; Krishnan, E.C.

1983-01-01

The effect of a silicone gel breast prosthesis on the absorbed dose distribution of 9-20 MeV electron beams and 1.25-15 MV photon beams was studied. Compared to water measurements, at depths smaller than the practical range of the electron beams, the central axis depth dose values below the prosthesis were lower for all energies by as much as 3.5%. However, at depths near the practical range, the central axis depth dose values for the prosthesis were greater than that of water by as much as 33%. Since this occurs near the end of the electron range, the resultant difference may not be clinically significant. Results of the effect of breast prosthesis on photon depth dose distributions reveal that no clinically significant perturbation is produced by the breast prosthesis using Co-60, 6- and 15-MV radiations

Effect of silicone gel breast prosthesis on electron and photon dose distributions

International Nuclear Information System (INIS)

Krishnan, L.; St George, F.J.; Mansfield, C.M.; Krishnan, E.C.

1983-01-01

The effect of a silicone gel breast prosthesis on the absorbed dose distribution of 9--20 MeV electron beams and 1.25--15 MV photon beams was studied. Compared to water measurements, at depths smaller than the practical range of the electron beams, the central axis depth dose values below the prothesis were lower for all energies by as much as 3.5%. However, at depths near the practical range, the central axis depth dose values for the prosthesis were greater than that of water by as much as 33%. Since this occurs near the end of the electron range, the resultant difference may not be clinically significant. Results of the effect of breast prosthesis on photon depth dose distributions reveal that no clinically significant perturbation is produced by the breast prosthesis using Co-60, 6- and 15-MV radiations

Hybrid silicon mode-locked laser with improved RF power by impedance matching

Science.gov (United States)

Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

2015-02-01

We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

Nonlinear spatial mode imaging of hybrid photonic crystal fibers

DEFF Research Database (Denmark)

Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Laurila, Marko

2013-01-01

Degenerate spontaneous four wave mixing is studied for the rst time in a large mode area hybrid photonic crystal ber, where light con nement is achieved by combined index- and bandgap guiding. Four wave mixing products are generated on the edges of the bandgaps, which is veri ed by numerical and ...... and experimental results. Since the core mode is in resonance with cladding modes near the bandedges an unconventional measurement technique is used, in this work named nonlinear spatial mode imaging....

Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Toçoğlu, Ubeyd, E-mail: utocoglu@sakarya.edu.tr; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

2016-12-15

Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

International Nuclear Information System (INIS)

Toçoğlu, Ubeyd; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

2016-01-01

Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

Light-trapping optimization in wet-etched silicon photonic crystal solar cells

Energy Technology Data Exchange (ETDEWEB)

Eyderman, Sergey, E-mail: sergey.eyderman@utoronto.ca [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); John, Sajeev [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Hafez, M.; Al-Ameer, S. S.; Al-Harby, T. S.; Al-Hadeethi, Y. [Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Bouwes, D. M. [iX-factory GmbH, Konrad Adenauer–Allee 11, 44263 Dortmund (Germany)

2015-07-14

We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

CERN Document Server

Zang, A; Ballabriga, R; Bisello, F; Campbell, M; Celi, J C; Fauler, A; Fiederle, M; Jensch, M; Kochanski, N; Llopart, X; Michel, N; Mollenhauer, U; Ritter, I; Tennert, F; Wölfel, S; Wong, W; Michel, T

2015-01-01

The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation wa...

Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture application type thin film solar cells with new structure (development of technologies to manufacture amorphous silicon and thin film poly-crystal silicon hybrid thin film solar cells); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

Research and development was performed with an objective to manufacture amorphous silicon and thin film poly-crystal silicon hybrid solar cells with large area and at low cost, being a high-efficiency next generation solar cell. The research was performed based on a principle that low-cost substrates shall be used, that a manufacturing process capable of forming amorphous silicon films with large area shall be based on, and that silicon film with as thin as possible thickness shall be used. Fiscal 1997 has started research and development on making the cells hybrid with amorphous silicon cells. As a result of the research and development, such achievements have been attained as using texture structure on the rear layer in thin poly-crystal silicon film solar cells with a thickness of two microns, and having achieved conversion efficiency of 10.1% by optimizing the junction interface forming conditions. A photo-deterioration test was carried out on hybrid cells which combine the thin poly-crystal silicon film cells having STAR structure with the amorphous silicon cells. Stabilization efficiency of 11.5% was attained after light has been irradiated for 500 hours or longer. (NEDO)

Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

Science.gov (United States)

Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

2011-12-07

Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

Programmable Quantum Photonic Processor Using Silicon Photonics

Science.gov (United States)

2017-04-01

8 Figure 6: (a) Proposed on-demand single photon source based on dynamic cavity storage . (b) Example of a gate implementation...electronic architectures tuned to implement artificial neural networks that improve upon both computational speed and energy efficiency. 3.6 All...states are in the dual- rail logic representation. Approved for Public Release; Distribution Unlimited. 6 Figure 3: Schematic of two-photon

A 'LEGO' Hybrid Photon Detector - assembled from standard mass-produced vacuum components

International Nuclear Information System (INIS)

Ferenc, Daniel; Lorenz, Eckart; Mirzoyan, Razmik

2000-01-01

Motivated primarily by the MAGIC atmospheric Cherenkov telescope project, we have developed a 'LEGO' Hybrid Photon Detector (HPD) comprising excellent focusing properties and protection against positive ion feedback. LEGO-HPD is supposed to be assembled from standard high vacuum components, which insures simplicity in the assembly procedure and reliability of operation

InP membrane on silicon integration technology

NARCIS (Netherlands)

Smit, M.K.

2013-01-01

Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

Hybrid Active-Passive Microwave Photonic Filter with High Quality Factor

International Nuclear Information System (INIS)

En-Ming, Xu; Xin-Liang, Zhang; Li-Na, Zhou; Yu, Zhang; De-Xiu, Huang

2009-01-01

A hybrid high quality factor (Q-factor) microwave photonic filter with a cascaded active filter and a passive filter is presented and experimentally demonstrated. The active infinite impulse response filter is realized by a recirculating delay line loop with a semiconductor optical amplifier, and a much narrower 3 dB bandwidth of response peaks can be achieved. A passive finite impulse response filter is realized by an unbalance Mach–Zehnder interferometer, and it is cascaded to select the desired filter frequencies and to suppress the intermediate peaks. Compared with the purely active filter scheme, the free spectrum range and the Q-factor of the hybrid structure can be doubled. Stable operation and a high Q-factor of 362 are experimentally demonstrated

Silicon nanowires in polymer nanocomposites for photovoltaic hybrid thin films

International Nuclear Information System (INIS)

Ben Dkhil, S.; Bourguiga, R.; Davenas, J.; Cornu, D.

2012-01-01

Highlights: ► Hybrid solar cells based on blends of poly(N-vinylcarbazole) and silicon nanowires have been fabricated. ► We have investigated the charge transfer between PVK and SiNWs by the way of the quenching of the PVK photoluminescence. ► The relation between the morphology of the composite thin films and the charge transfer between SiNWs and PVK has been examined. ► We have investigated the effects of SiNWs concentration on the photovoltaic characteristics leading to the optimization of a critical SiNWs concentration. - Abstract: Hybrid thin films combining the high optical absorption of a semiconducting polymer film and the electronic properties of silicon fillers have been investigated in the perspective of the development of low cost solar cells. Bulk heterojunction photovoltaic materials based on blends of a semiconductor polymer poly(N-vinylcarbazole) (PVK) as electron donor and silicon nanowires (SiNWs) as electron acceptor have been studied. Composite PVK/SiNWs films were cast from a common solvent mixture. UV–visible spectrometry and photoluminescence of the composites have been studied as a function of the SiNWs concentration. Photoluminescence spectroscopy (PL) shows the existence of a critical SiNWs concentration of about 10 wt % for PL quenching corresponding to the most efficient charge pair separation. The photovoltaic (PV) effect has been studied under illumination. The optimum open-circuit voltage V oc and short-circuit current density J sc are obtained for 10 wt % SiNWs whereas a degradation of these parameters is observed at higher SiNWs concentrations. These results are correlated to the formation of aggregates in the composite leading to recombination of the photogenerated charge pairs competing with the dissociation mechanism.

Ray trace visualization of negative refraction of light in two-dimensional air-bridged silicon photonic crystal slabs at 1.55 microm.

Science.gov (United States)

Gan, Lin; Liu, Ya-Zhao; Li, Jiang-Yan; Zhang, Ze-Bo; Zhang, Dao-Zhong; Li, Zhi-Yuan

2009-06-08

We demonstrate design, fabrication, and ray trace observation of negative refraction of near-infrared light in a two-dimensional square lattice of air holes etched into an air-bridged silicon slab. Special surface morphologies are designed to reduce the impedance mismatch when light refracts from a homogeneous silicon slab into the photonic crystal slab. We clearly observed negative refraction of infrared light for TE-like modes in a broad wavelength range by using scanning near-field optical microscopy technology. The experimental results are in good agreement with finite-difference time-domain simulations. The results indicate the designed photonic crystal structure can serve as polarization beam splitter.

Multi-planar amorphous silicon photonics with compact interplanar couplers, cross talk mitigation, and low crossing loss

Directory of Open Access Journals (Sweden)

Jeff Chiles

2017-11-01

Full Text Available We propose and experimentally demonstrate a photonic routing architecture that can efficiently utilize the space of multi-plane (3D photonic integration. A wafer with three planes of amorphous silicon waveguides was fabricated and characterized, demonstrating < 3 × 1 0 − 4 dB loss per out-of-plane waveguide crossing, 0.05 ± 0.02 dB per interplane coupler, and microring resonators on three planes with a quality factors up to 8.2 × 1 0 4 . We also explore a phase velocity mapping strategy to mitigate the cross talk between co-propagating waveguides on different planes. These results expand the utility of 3D photonic integration for applications such as optical interconnects, neuromorphic computing and optical phased arrays.

Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

Science.gov (United States)

Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B

2015-08-10

We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

Silicon photonic integrated circuit swept-source optical coherence tomography receiver with dual polarization, dual balanced, in-phase and quadrature detection.

Science.gov (United States)

Wang, Zhao; Lee, Hsiang-Chieh; Vermeulen, Diedrik; Chen, Long; Nielsen, Torben; Park, Seo Yeon; Ghaemi, Allan; Swanson, Eric; Doerr, Chris; Fujimoto, James

2015-07-01

Optical coherence tomography (OCT) is a widely used three-dimensional (3D) optical imaging method with many biomedical and non-medical applications. Miniaturization, cost reduction, and increased functionality of OCT systems will be critical for future emerging clinical applications. We present a silicon photonic integrated circuit swept-source OCT (SS-OCT) coherent receiver with dual polarization, dual balanced, in-phase and quadrature (IQ) detection. We demonstrate multiple functional capabilities of IQ polarization resolved detection including: complex-conjugate suppressed full-range OCT, polarization diversity detection, and polarization-sensitive OCT. To our knowledge, this is the first demonstration of a silicon photonic integrated receiver for OCT. The integrated coherent receiver provides a miniaturized, low-cost solution for SS-OCT, and is also a key step towards a fully integrated high speed SS-OCT system with good performance and multi-functional capabilities. With further performance improvement and cost reduction, photonic integrated technology promises to greatly increase penetration of OCT systems in existing applications and enable new applications.

A-centers in silicon studied with hybrid density functional theory

KAUST Repository

Wang, Hao; Chroneos, Alexander; Londos, C. A.; Schwingenschlö gl, Udo; Sgourou, E. N.

2013-01-01

Density functional theory employing hybrid functional is used to gain fundamental insight into the interaction of vacancies with oxygen interstitials to form defects known as A-centers in silicon. We calculate the formation energy of the defect with respect to the Fermi energy for all possible charge states. It is found that the neutral and doubly negatively charged A-centers dominate. The findings are analyzed in terms of the density of states and discussed in view of previous experimental and theoretical studies.

A-centers in silicon studied with hybrid density functional theory

KAUST Repository

Wang, Hao

2013-07-29

Density functional theory employing hybrid functional is used to gain fundamental insight into the interaction of vacancies with oxygen interstitials to form defects known as A-centers in silicon. We calculate the formation energy of the defect with respect to the Fermi energy for all possible charge states. It is found that the neutral and doubly negatively charged A-centers dominate. The findings are analyzed in terms of the density of states and discussed in view of previous experimental and theoretical studies.

Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon

International Nuclear Information System (INIS)

Chen, H. Y.; Peng, Y.; Hong, M.; Zhang, Y. B.; Cai, Bin; Zhu, Y. M.; Yuan, G. D.; Zhang, Y.; Liu, Z. Q.; Wang, J. X.; Li, J. M.

2014-01-01

We report an enhanced conversion efficiency of femtosecond-laser treated silicon solar cells by surface modification of anisotropic-etching. The etching improves minority carrier lifetime inside modified black silicon area substantially; moreover, after the etching, an inverted pyramids/upright pyramids mixed texture surface is obtained, which shows better photon capturing capability than that of conventional pyramid texture. Combing of these two merits, the reformed solar cells show higher conversion efficiency than that of conventional pyramid textured cells. This work presents a way for fabricating high performance silicon solar cells, which can be easily applied to mass-production

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.

2010-06-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

2010-01-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Optics Communications: Special issue on Polymer Photonics and Its Applications

Science.gov (United States)

Zhang, Ziyang; Pitwon, Richard C. A.; Feng, Jing

2016-03-01

In the last decade polymer photonics has witnessed a tremendous boost in research efforts and practical applications. Polymer materials can be engineered to exhibit unique optical and electrical properties. Extremely transparent and reliable passive optical polymers have been made commercially available and paved the ground for the development of various waveguide components. Advancement in the research activities regarding the synthesis of active polymers has enabled devices such as ultra-fast electro-optic modulators, efficient white light emitting diodes, broadband solar cells, flexible displays, and so on. The fabrication technology is not only fast and cost-effective, but also provides flexibility and broad compatibility with other semiconductor processing technologies. Reports show that polymers have been integrated in photonic platforms such as silicon-on-insulator (SOI), III-V semiconductors, and silica PLCs, and vice versa, photonic components made from a multitude of materials have been integrated, in a heterogeneous/hybrid manner, in polymer photonic platforms.

Monitoring of degradation of porous silicon photonic crystals using digital photography

Science.gov (United States)

2014-01-01

We report the monitoring of porous silicon (pSi) degradation in aqueous solutions using a consumer-grade digital camera. To facilitate optical monitoring, the pSi samples were prepared as one-dimensional photonic crystals (rugate filters) by electrochemical etching of highly doped p-type Si wafers using a periodic etch waveform. Two pSi formulations, representing chemistries relevant for self-reporting drug delivery applications, were tested: freshly etched pSi (fpSi) and fpSi coated with the biodegradable polymer chitosan (pSi-ch). Accelerated degradation of the samples in an ethanol-containing pH 10 aqueous basic buffer was monitored in situ by digital imaging with a consumer-grade digital camera with simultaneous optical reflectance spectrophotometric point measurements. As the nanostructured porous silicon matrix dissolved, a hypsochromic shift in the wavelength of the rugate reflectance peak resulted in visible color changes from red to green. While the H coordinate in the hue, saturation, and value (HSV) color space calculated using the as-acquired photographs was a good monitor of degradation at short times (t  pSi-ch. PMID:25242902

Multi-step surface functionalization of polyimide based evanescent wave photonic biosensors and application for DNA hybridization by Mach-Zehnder interferometer

Energy Technology Data Exchange (ETDEWEB)

Melnik, Eva [Health and Environment Department, Nano Systems, AIT Austrian Institute of Technology GmbH, Donau-City-Strasse 1, 1220 Vienna (Austria); Department of Analytical Chemistry, University of Vienna, Waehringer Strasse 38, 1090 Vienna (Austria); Bruck, Roman [Health and Environment Department, Nano Systems, AIT Austrian Institute of Technology GmbH, Donau-City-Strasse 1, 1220 Vienna (Austria); Hainberger, Rainer, E-mail: rainer.hainberger@ait.ac.at [Health and Environment Department, Nano Systems, AIT Austrian Institute of Technology GmbH, Donau-City-Strasse 1, 1220 Vienna (Austria); Laemmerhofer, Michael, E-mail: michael.laemmerhofer@univie.ac.at [Department of Analytical Chemistry, University of Vienna, Waehringer Strasse 38, 1090 Vienna (Austria)

2011-08-12

Highlights: {yields} We realize a biosensing platform for polyimide evanescent photonic wave sensors. {yields} We show that the surface functionalization via silanisation and biotinylation followed by streptavidin immobilization do not destroy or damage the thin polyimide film. {yields} A highly dense streptavidin layer enables the immobilisation of biotinylated ligands such as biotinylated ssDNA for the selective measurement of DNA hybridization. - Abstract: The process of surface functionalization involving silanization, biotinylation and streptavidin bonding as platform for biospecific ligand immobilization was optimized for thin film polyimide spin-coated silicon wafers, of which the polyimide film serves as a wave guiding layer in evanescent wave photonic biosensors. This type of optical sensors make great demands on the materials involved as well as on the layer properties, such as the optical quality, the layer thickness and the surface roughness. In this work we realized the binding of a 3-mercaptopropyl trimethoxysilane on an oxygen plasma activated polyimide surface followed by subsequent derivatization of the reactive thiol groups with maleimide-PEG{sub 2}-biotin and immobilization of streptavidin. The progress of the functionalization was monitored by using different fluorescence labels for optimization of the chemical derivatization steps. Further, X-ray photoelectron spectroscopy and atomic force microscopy were utilized for the characterization of the modified surface. These established analytical methods allowed to derive information like chemical composition of the surface, surface coverage with immobilized streptavidin, as well as parameters of the surface roughness. The proposed functionalization protocol furnished a surface density of 144 fmol mm{sup -2} streptavidin with good reproducibility (13.9% RSD, n = 10) and without inflicted damage to the surface. This surface modification was applied to polyimide based Mach-Zehnder interferometer

A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor.

Science.gov (United States)

Lee, Jieun; Jang, Jaeman; Choi, Bongsik; Yoon, Jinsu; Kim, Jee-Yeon; Choi, Yang-Kyu; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin

2015-07-21

This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5 × 10(5) times larger than that of a single SiNW sensor. In addition, we demonstrate charged polymer detection using the biosensor, with a high current change of 4.5 × 10(5) with a 500 nM concentration of poly(allylamine hydrochloride). In addition, we demonstrate a wide dynamic range can be obtained by adjusting the liquid gate voltage. We expect that this biosensor will be advantageous and practical for biosensor applications which requires lower noise, high speed, and high density.

Compact tunable silicon photonic differential-equation solver for general linear time-invariant systems.

Science.gov (United States)

Wu, Jiayang; Cao, Pan; Hu, Xiaofeng; Jiang, Xinhong; Pan, Ting; Yang, Yuxing; Qiu, Ciyuan; Tremblay, Christine; Su, Yikai

2014-10-20

We propose and experimentally demonstrate an all-optical temporal differential-equation solver that can be used to solve ordinary differential equations (ODEs) characterizing general linear time-invariant (LTI) systems. The photonic device implemented by an add-drop microring resonator (MRR) with two tunable interferometric couplers is monolithically integrated on a silicon-on-insulator (SOI) wafer with a compact footprint of ~60 μm × 120 μm. By thermally tuning the phase shifts along the bus arms of the two interferometric couplers, the proposed device is capable of solving first-order ODEs with two variable coefficients. The operation principle is theoretically analyzed, and system testing of solving ODE with tunable coefficients is carried out for 10-Gb/s optical Gaussian-like pulses. The experimental results verify the effectiveness of the fabricated device as a tunable photonic ODE solver.

Radiation stable, hybrid, chemical vapor infiltration/preceramic polymer joining of silicon carbide components

Energy Technology Data Exchange (ETDEWEB)

Khalifa, Hesham E., E-mail: hesham.khalifa@ga.com [General Atomics, 3550 General Atomics Ct., San Diego 92121, CA (United States); Koyanagi, Takaaki [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge 37831, TN (United States); Jacobsen, George M.; Deck, Christian P.; Back, Christina A. [General Atomics, 3550 General Atomics Ct., San Diego 92121, CA (United States)

2017-04-15

This paper reports on a nuclear-grade joining material for bonding of silicon carbide-based components. The joint material is fabricated via a hybrid preceramic polymer, chemical vapor infiltration process. The joint is comprised entirely of β-SiC and results in excellent mechanical and permeability performance. The joint strength, composition, and microstructure have been characterized before and after irradiation to 4.5 dpa at 730 °C in the High Flux Isotope Reactor. The hybrid preceramic polymer-chemical vapor infiltrated joint exhibited complete retention of shear strength and no evidence of microstructural evolution or damage was detected following irradiation.

Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection

Directory of Open Access Journals (Sweden)

André Darveau

2007-09-01

Full Text Available The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS. In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

Fabrication and optical characteristics of silicon-based two-dimensional wavelength division multiplexing splitter with photonic crystal directional waveguide couplers

International Nuclear Information System (INIS)

Liu, Cheng-Yang

2011-01-01

Photonic crystals have many potential applications because of their ability to control lightwave propagation. We report on the fabrication and optical properties of quasi-two-dimensional photonic crystals with triangular lattice of dielectric rods in air. Rod-type photonic crystal structures were fabricated in silicon by electron beam lithography and dry-etching techniques. Wavelength division multiplexing splitters were fabricated from two-dimensional photonic crystal directional waveguide couplers. Transmission spectra were measured and device operation was shown to be in agreement with theoretical calculations. The splitters can be used in visible light region. Such an approach to photonic element systems should enable new applications for designing components in photonic integrated circuits. -- Highlights: → We report the fabrication and optical properties of rod-type photonic crystal. → The splitter was fabricated by electron beam lithography and dry-etching techniques. → The splitter was composed of directional waveguide couplers. → Measured transmission spectra are in agreement with theoretical calculations. → The splitters can be used in visible light region.

Polarization Beam Splitter Based on a Self-Collimation Michelson Interferometer in a Silicon Photonic Crystal

International Nuclear Information System (INIS)

Chen Xi-Yao; Lin Gui-Min; Li Jun-Jun; Xu Xiao-Fu; Jiang Jun-Zhen; Qiang Ze-Xuan; Qiu Yi-Shen; Li Hui

2012-01-01

A polarization beam splitter based on a self-collimation Michelson interferometer (SMI) in a hole-type silicon photonic crystal is proposed and numerically demonstrated. Utilizing the polarization dependence of the transmission spectra of the SMI and polarization peak matching method, the SMI can work as a polarization beam splitter (PBS) by selecting an appropriate path length difference in the structure. Based on its novel polarization beam splitting mechanics, the polarization extinction ratios (PERs) for TM and TE modes are as high as 18.4 dB and 24.3 dB, respectively. Since its dimensions are only several operating wavelengths, the PBS may have practical applications in photonic integrated circuits. (fundamental areas of phenomenology(including applications))

Electrically driven hybrid photonic metamaterials for multifunctional control

Science.gov (United States)

Kang, Lei; Liu, Liu; Campbell, Sawyer D.; Yue, Taiwei; Ren, Qiang; Mayer, Theresa S.; Werner, Douglas H.

2017-08-01

The unique light-matter interaction in metamaterials, a type of artificial medium in which the geometrical features of subunits dominate their optical responses, have been utilized to achieve exotic material properties that are rare or nonexistent in natural materials. Furthermore, to extend their behaviors, active materials have been introduced into metamaterial systems to advance tunability, switchability and nonlinearity. Nevertheless, practical examples of versatile photonic metamaterials remain exceedingly rare for two main reasons. On the one hand, in sharp contrast to the broad material options available at lower frequencies, it is less common to find active media in the optical regime that can provide pronounced dielectric property changes under external stimuli, such as electric and magnetic fields. Vanadium dioxide (VO2), offering a large refractive index variation over a broad frequency range due to its near room temperature insulator-to-metal transition (IMT), has been favored in recent studies on tunable metamaterials. On the other hand, it turns out that regulating responses of hybrid metamaterials to external forces in an integrated manner is not a straightforward task. Recently, metamaterial-enabled devices (i.e., metadevices) with `self-sufficient' or `self-contained' electrical and optical properties have enabled complex functionalities. Here, we present a design methodology along with the associated experimental validation of a VO2 thin film integrated optical metamaterial absorber as a hybrid photonic platform for electrically driven multifunctional control, including reflectance switching, a rewritable memory process and manageable localized camouflage. The nanoengineered topologically continuous metal structure simultaneously supports the optical resonance and electrical functionality that actuates the phase transition in VO2 through the process of Joule heating. This work provides a universal approach to creating self-sufficient and highly

Cavités à fente à cristaux photoniques pour l'intégration hybride sur silicium

OpenAIRE

Hoang , Thi Hong Cam

2017-01-01

This Ph.D. work is a contribution to the modeling and the experimental study of slot photonic crystal cavities for hybrid on-silicon integration. Among the design works, we first have used plane the wave expansion and finite-difference time-domain methods to design a series of mechanically robust (non-free membrane) SOI slot photonic crystal heterostructure cavities with resonance wavelengths in the telecommunication range, i.e. from 1.3 µm – 1.6 µm, with Q-factors of around several tens of t...

Using silicon nanostructures for the improvement of silicon solar cells' efficiency

International Nuclear Information System (INIS)

Torre, J. de la; Bremond, G.; Lemiti, M.; Guillot, G.; Mur, P.; Buffet, N.

2006-01-01

Silicon nanostructures (ns-Si) show interesting optical and electrical properties as a result of the band gap widening caused by quantum confinement effects. Along with their potential utilization for silicon-based light emitters' fabrication, they could also represent an appealing option for the improvement of energy conversion efficiency in silicon-based solar cells whether by using their luminescence properties (photon down-conversion) or the excess photocurrent produced by an improved high-energy photon's absorption. In this work, we report on the morphological and optical studies of non-stoichiometric silica (SiO x ) and silicon nitride (SiN x ) layers containing silicon nanostructures (ns-Si) in view of their application for solar cell's efficiency improvement. The morphological studies of the samples performed by transmission electron microscopy (TEM) unambiguously show the presence of ns-Si in a crystalline form for high temperature-annealed SiO x layers and for low temperature deposition of SiN x layers. The photoluminescence emission (PL) shows a rather high efficiency in both kind of layers with an intensity of only a factor ∼ 100 lower than that of porous silicon (pi-Si). The photocurrent spectroscopy (PC) shows a significant increase of absorption at high photon energy excitation most probably related to photon absorption within ns-Si quantized states. Moreover, the absorption characteristics obtained from PC spectra show a good agreement with the PL emission states unambiguously demonstrating a same origin, related to Q-confined excitons within ns-Si. Finally, the major asset of this material is the possibility to incorporate it to solar cells manufacturing processing for an insignificant cost

Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

Science.gov (United States)

Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

2016-10-03

Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

Development of gamma-photon/Cerenkov-light hybrid system for simultaneous imaging of I-131 radionuclide

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Seiichi; Suzuki, Mayumi; Kato, Katsuhiko [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine (Japan); Watabe, Tadashi; Ikeda, Hayato; Kanai, Yasukazu [Department of Molecular Imaging in Medicine, Osaka University Graduate School of Medicine (Japan); Ogata, Yoshimune [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine (Japan); Hatazawa, Jun [Department of Molecular Imaging in Medicine, Osaka University Graduate School of Medicine (Japan)

2016-09-11

Although iodine 131 (I-131) is used for radionuclide therapy, high resolution images are difficult to obtain with conventional gamma cameras because of the high energy of I-131 gamma photons (364 keV). Cerenkov-light imaging is a possible method for beta emitting radionuclides, and I-131 (606 MeV maximum beta energy) is a candidate to obtain high resolution images. We developed a high energy gamma camera system for I-131 radionuclide and combined it with a Cerenkov-light imaging system to form a gamma-photon/Cerenkov-light hybrid imaging system to compare the simultaneously measured images of these two modalities. The high energy gamma imaging detector used 0.85-mm×0.85-mm×10-mm thick GAGG scintillator pixels arranged in a 44×44 matrix with a 0.1-mm thick reflector and optical coupled to a Hamamatsu 2 in. square position sensitive photomultiplier tube (PSPMT: H12700 MOD). The gamma imaging detector was encased in a 2 cm thick tungsten shield, and a pinhole collimator was mounted on its top to form a gamma camera system. The Cerenkov-light imaging system was made of a high sensitivity cooled CCD camera. The Cerenkov-light imaging system was combined with the gamma camera using optical mirrors to image the same area of the subject. With this configuration, we simultaneously imaged the gamma photons and the Cerenkov-light from I-131 in the subjects. The spatial resolution and sensitivity of the gamma camera system for I-131 were respectively ~3 mm FWHM and ~10 cps/MBq for the high sensitivity collimator at 10 cm from the collimator surface. The spatial resolution of the Cerenkov-light imaging system was 0.64 mm FWHM at 10 cm from the system surface. Thyroid phantom and rat images were successfully obtained with the developed gamma-photon/Cerenkov-light hybrid imaging system, allowing direct comparison of these two modalities. Our developed gamma-photon/Cerenkov-light hybrid imaging system will be useful to evaluate the advantages and disadvantages of these two

Analysis of photonic band gaps in two-dimensional photonic crystals with rods covered by a thin interfacial layer

International Nuclear Information System (INIS)

Trifonov, T.; Marsal, L.F.; Pallares, J.; Rodriguez, A.; Alcubilla, R.

2004-01-01

We investigate different aspects of the absolute photonic band gap (PBG) formation in two-dimensional photonic structures consisting of rods covered with a thin dielectric film. Specifically, triangular and honeycomb lattices in both complementary arrangements, i.e., air rods drilled in silicon matrix and silicon rods in air, are studied. We consider that the rods are formed of a dielectric core (silicon or air) surrounded by a cladding layer of silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), or germanium (Ge). Such photonic lattices present absolute photonic band gaps, and we study the evolution of these gaps as functions of the cladding material and thickness. Our results show that in the case of air rods in dielectric media the existence of dielectric cladding reduces the absolute gap width and may cause complete closure of the gap if thick layers are considered. For the case of dielectric rods in air, however, the existence of a cladding layer can be advantageous and larger absolute PBG's can be achieved

Feasibility of efficient room-temperature solid-state sources of indistinguishable single photons using ultrasmall mode volume cavities

Science.gov (United States)

Wein, Stephen; Lauk, Nikolai; Ghobadi, Roohollah; Simon, Christoph

2018-05-01

Highly efficient sources of indistinguishable single photons that can operate at room temperature would be very beneficial for many applications in quantum technology. We show that the implementation of such sources is a realistic goal using solid-state emitters and ultrasmall mode volume cavities. We derive and analyze an expression for photon indistinguishability that accounts for relevant detrimental effects, such as plasmon-induced quenching and pure dephasing. We then provide the general cavity and emitter conditions required to achieve efficient indistinguishable photon emission and also discuss constraints due to phonon sideband emission. Using these conditions, we propose that a nanodiamond negatively charged silicon-vacancy center combined with a plasmonic-Fabry-Pérot hybrid cavity is an excellent candidate system.

TU-FG-209-03: Exploring the Maximum Count Rate Capabilities of Photon Counting Arrays Based On Polycrystalline Silicon

Energy Technology Data Exchange (ETDEWEB)

Liang, A K; Koniczek, M; Antonuk, L E; El-Mohri, Y; Zhao, Q [University of Michigan, Ann Arbor, MI (United States)

2016-06-15

Purpose: Photon counting arrays (PCAs) offer several advantages over conventional, fluence-integrating x-ray imagers, such as improved contrast by means of energy windowing. For that reason, we are exploring the feasibility and performance of PCA pixel circuitry based on polycrystalline silicon. This material, unlike the crystalline silicon commonly used in photon counting detectors, lends itself toward the economic manufacture of radiation tolerant, monolithic large area (e.g., ∼43×43 cm2) devices. In this presentation, exploration of maximum count rate, a critical performance parameter for such devices, is reported. Methods: Count rate performance for a variety of pixel circuit designs was explored through detailed circuit simulations over a wide range of parameters (including pixel pitch and operating conditions) with the additional goal of preserving good energy resolution. The count rate simulations assume input events corresponding to a 72 kVp x-ray spectrum with 20 mm Al filtration interacting with a CZT detector at various input flux rates. Output count rates are determined at various photon energy threshold levels, and the percentage of counts lost (e.g., due to deadtime or pile-up) is calculated from the ratio of output to input counts. The energy resolution simulations involve thermal and flicker noise originating from each circuit element in a design. Results: Circuit designs compatible with pixel pitches ranging from 250 to 1000 µm that allow count rates over a megacount per second per pixel appear feasible. Such rates are expected to be suitable for radiographic and fluoroscopic imaging. Results for the analog front-end circuitry of the pixels show that acceptable energy resolution can also be achieved. Conclusion: PCAs created using polycrystalline silicon have the potential to offer monolithic large-area detectors with count rate performance comparable to those of crystalline silicon detectors. Further improvement through detailed circuit

Viability study of porous silicon photonic mirrors as secondary reflectors for solar concentration systems

Energy Technology Data Exchange (ETDEWEB)

de la Mora, M.B.; Jaramillo, O.A.; Nava, R.; Tagueena-Martinez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, A. P. 34, 62580 Temixco, Morelos (Mexico); del Rio, J.A. [Centro Morelense de Innovacion y Transferencia Tecnologica, CCyTEM Camino Temixco a Emiliano Zapata, Km 0.3, Colonia Emiliano Zapata, 62760 Morelos (Mexico)

2009-08-15

In this paper we report the viability of using porous silicon photonic mirrors (PSPM) as secondary reflectors in solar concentration systems. The PSPM were fabricated with nanostructured porous silicon to reflect light from the visible range to the near infrared region (500-2500 nm), although this range could be tuned for specific wavelength applications. Our PSPM are multilayers of two alternated refractive indexes (1.5 and 2.0), where the condition of a quarter wavelength in the optical path was imposed. The PSPM were exposed to high radiation in a solar concentrator equipment. As a result, we observed a significant degradation of the mirrors at an approximated temperature of 900 C. In order to analyze the origin of the degradation of PSPM, we model the samples with a non-linear optical approach and study the effect of a temperature increase. Those theoretical and experimental studies allow us to conclude that the main phenomenon involved in the breakdown of the photonic mirrors is of thermal origin, produced by heterogeneous expansion of each layer. Our next step was to introduce a cooling system into the solar concentrator to keep the mirrors at approximately 70 C, with very good results. As a conclusion we propose the use of PSPM as selective secondary mirrors in solar concentration devices using temperature control to avoid thermal degradation. (author)

Full color stop bands in hybrid organic/inorganic block copolymer photonic gels by swelling-freezing.

Science.gov (United States)

Kang, Changjoon; Kim, Eunjoo; Baek, Heeyoel; Hwang, Kyosung; Kwak, Dongwoo; Kang, Youngjong; Thomas, Edwin L

2009-06-10

We report a facile way of fabricating hybrid organic/inorganic photonic gels by selective swelling and subsequent infiltration of SiO(2) into one type of lamellar microdomain previously self-assembled from modest-molecular-weight block copolymers. Transparent, in-plane lamellar films were first prepared by assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP), and subsequently the P2VP domains were swollen with a selective solvent, methanol. The swollen structures were then fixated by synthesizing SiO(2) nanoparticles within P2VP domains. The resulting frozen photonic gels (f-photonic gels) exhibited strong reflective colors with stop bands across the visible region of wavelengths.

Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

Science.gov (United States)

Arjhangmehr, Afshin; Feghhi, Seyed Amir Hossein

2014-10-01

Solar modules and arrays are the conventional energy resources of space satellites. Outside the earth's atmosphere, solar panels experience abnormal radiation environments and because of incident particles, photovoltaic (PV) parameters degrade. This article tries to analyze the electrical performance of electron and photon-irradiated mono-crystalline silicon (mono-Si) solar cells. PV cells are irradiated by mono-energetic electrons and poly-energetic photons and immediately characterized after the irradiation. The mean degradation of the maximum power (Pmax) of silicon solar cells is presented and correlated using the displacement damage dose (Dd) methodology. This method simplifies evaluation of cell performance in space radiation environments and produces a single characteristic curve for Pmax degradation. Furthermore, complete analysis of the results revealed that the open-circuit voltage (Voc) and the filling factor of mono-Si cells did not significantly change during the irradiation and were independent of the radiation type and fluence. Moreover, a new technique is developed that adapts the irradiation-induced effects in a single-cell equivalent electrical circuit and adjusts its elements. The "modified circuit" is capable of modeling the "radiation damage" in the electrical behavior of mono-Si solar cells and simplifies the designing of the compensation circuits.

Optical nonreciprocal transmission in an asymmetric silicon photonic crystal structure

Energy Technology Data Exchange (ETDEWEB)

Wu, Zheng; Chen, Juguang; Ji, Mengxi; Huang, Qingzhong; Xia, Jinsong; Wang, Yi, E-mail: yingwu2@126.com, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wu, Ying, E-mail: yingwu2@126.com, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

2015-11-30

An optical nonreciprocal transmission (ONT) is realized by employing the nonlinear effects in a compact asymmetric direct-coupled nanocavity-waveguide silicon photonic crystal structure with a high loaded quality factor (Q{sub L}) of 42 360 and large extinction ratio exceeding 30 dB. Applying a single step lithography and successive etching, the device can realize the ONT in an individual nanocavity, alleviating the requirement to accurately control the resonance of the cavities. A maximum nonreciprocal transmission ratio of 21.1 dB as well as a working bandwidth of 280 pm in the telecommunication band are obtained at a low input power of 76.7 μW. The calculated results by employing a nonlinear coupled-mode model are in good agreement with the experiment.

CMOS-compatible photonic devices for single-photon generation

Directory of Open Access Journals (Sweden)

Xiong Chunle

2016-09-01

Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

Gold nanoparticle-embedded silk protein-ZnO nanorod hybrids for flexible bio-photonic devices

Science.gov (United States)

Gogurla, Narendar; Kundu, Subhas C.; Ray, Samit K.

2017-04-01

Silk protein has been used as a biopolymer substrate for flexible photonic devices. Here, we demonstrate ZnO nanorod array hybrid photodetectors on Au nanoparticle-embedded silk protein for flexible optoelectronics. Hybrid samples exhibit optical absorption at the band edge of ZnO as well as plasmonic energy due to Au nanoparticles, making them attractive for selective UV and visible wavelength detection. The device prepared on Au-silk protein shows a much lower dark current and a higher photo to dark-current ratio of ∼105 as compared to the control sample without Au nanoparticles. The hybrid device also exhibits a higher specific detectivity due to higher responsivity arising from the photo-generated hole trapping by Au nanoparticles. Sharp pulses in the transient photocurrent have been observed in devices prepared on glass and Au-silk protein substrates due to the light induced pyroelectric effect of ZnO, enabling the demonstration of self-powered photodetectors at zero bias. Flexible hybrid detectors have been demonstrated on Au-silk/polyethylene terephthalate substrates, exhibiting characteristics similar to those fabricated on rigid glass substrates. A study of the performance of photodetectors with different bending angles indicates very good mechanical stability of silk protein based flexible devices. This novel concept of ZnO nanorod array photodetectors on a natural silk protein platform provides an opportunity to realize integrated flexible and self-powered bio-photonic devices for medical applications in near future.

A new generation of ultra-dense optical I/O for silicon photonics

Science.gov (United States)

Wlodawski, Mitchell S.; Kopp, Victor I.; Park, Jongchul; Singer, Jonathan; Hubner, Eric E.; Neugroschl, Daniel; Chao, Norman; Genack, Azriel Z.

2014-03-01

In response to the optical packaging needs of a rapidly growing silicon photonics market, Chiral Photonics, Inc. (CPI) has developed a new generation of ultra-dense-channel, bi-directional, all-optical, input/output (I/O) couplers that bridge the data transport gap between standard optical fibers and photonic integrated circuits. These couplers, called Pitch Reducing Optical Fiber Arrays (PROFAs), provide a means to simultaneously match both the mode field and channel spacing (i.e. pitch) between an optical fiber array and a photonic integrated circuit (PIC). Both primary methods for optically interfacing with PICs, via vertical grating couplers (VGCs) and edge couplers, can be addressed with PROFAs. PROFAs bring the signal-carrying cores, either multimode or singlemode, of many optical fibers into close proximity within an all-glass device that can provide low loss coupling to on-chip components, including waveguides, gratings, detectors and emitters. Two-dimensional (2D) PROFAs offer more than an order of magnitude enhancement in channel density compared to conventional one-dimensional (1D) fiber arrays. PROFAs can also be used with low vertical profile solutions that simplify optoelectronic packaging while reducing PIC I/O real estate usage requirements. PROFA technology is based on a scalable production process for microforming glass preform assemblies as they are pulled through a small oven. An innovative fiber design, called the "vanishing core," enables tailoring the mode field along the length of the PROFA to meet the coupling needs of disparate waveguide technologies, such as fiber and onchip. Examples of single- and multi-channel couplers fabricated using this technology will be presented.

Fast digitization and discrimination of prompt neutron and photon signals using a novel silicon carbide detector

International Nuclear Information System (INIS)

Brandon W. Blackburn; James T. Johnson; Scott M. Watson; David L. Chichester; James L. Jones; Frank H. Ruddy; John G. Seidel; Robert W. Flammang

2007-01-01

Current requirements of some Homeland Security active interrogation projects for the detection of Special Nuclear Material (SNM) necessitate the development of faster inspection and acquisition capabilities. In order to do so, fast detectors which can operate during and shortly after intense interrogation radiation flashes are being developed. Novel silicon carbide (SiC) semiconductor Schottky diodes have been utilized as robust neutron and photon detectors in both pulsed photon and pulsed neutron fields and are being integrated into active inspection environments to allow exploitation of both prompt and delayed emissions. These detectors have demonstrated the capability of detecting both photon and neutron events during intense photon flashes typical of an active inspection environment. Beyond the inherent insensitivity of SiC to gamma radiation, fast digitization and processing has demonstrated that pulse shape discrimination (PSD) in combination with amplitude discrimination can further suppress unwanted gamma signals and extract fast neutron signatures. Usable neutron signals have been extracted from mixed radiation fields where the background has exceeded the signals of interest by >1000:1

The design and investigation of hybrid ferromagnetic/silicon spin electronic devices

International Nuclear Information System (INIS)

Pugh, D.I.

2001-01-01

The focus of this study concerns the design and investigation of ferromagnetic/silicon hybrid spin electronic devices as part of a wider project to design a novel spin valve transistor. The key issue to obtain a room temperature spin electronic device is the electrical injection of a spin polarised current from a ferromagnetic contact into a semiconductor. Despite many attempts concentrating on GaAs and InAs only small (< 1%) effects have been observed, making it difficult to confirm spin injection. Lateral devices were designed and fabricated using standard device fabrication procedures to produce arrays of Co/Si/So junctions. Subsequent designs aimed to reduce the number of junctions and improve device isolation. Evidence for spin dependent MR of up to 0.56% was observed in Co/p-Si/Co junctions with silicon gaps up to 16 μm in length. The maximum MR was observed when the first Co/Si Schottky barrier was reverse biased forming a high resistance interface. Vertical devices were designed in an attempt to eliminate any alternative current paths by using a well defined, 1 μm thick silicon membrane. Despite attempts to include oxide barriers, no spin dependent MR was observed in these devices. However, a novel vertical silicon based design has been made which should facilitate further advanced studies of spin injection and transport. The spin diffusion length in n-type silicon has been calculated as a function of doping concentration and temperature by considering the spin relaxation mechanisms in the semiconductor. Discussion has been made concerning p-type silicon and comparisons made with GaAs, indicating that n-Si should show longer spin diffusion lengths. The key design criteria for designing room temperature spin electronic devices have been highlighted. These include the use of a high leakage Schottky barrier or tunnel barrier between the ferromagnet and p-Si and a contact to the silicon to enable appropriate biasing to each FM/Si interface. (author)

Hybrid polymer photonic crystal fiber with integrated chalcogenide glass nanofilms

DEFF Research Database (Denmark)

Markos, Christos; Kubat, Irnis; Bang, Ole

2014-01-01

The combination of chalcogenide glasses with polymer photonic crystal fibers (PCFs) is a difficult and challenging task due to their different thermo-mechanical material properties. Here we report the first experimental realization of a hybrid polymer-chalcogenide PCF with integrated As2S3 glass...... nanofilms at the inner surface of the air-channels of a poly-methyl-methacrylate (PMMA) PCF. The integrated high refractive index glass films introduce distinct antiresonant transmission bands in the 480-900 nm wavelength region. We demonstrate that the ultra-high Kerr nonlinearity of the chalcogenide glass...

Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

Science.gov (United States)

Hussein, Ali Abdulsattar

This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased

Controlling the flow of light with silicon nanostructures

International Nuclear Information System (INIS)

Park, W

2010-01-01

Silicon is an important material for integrated photonics applications. High refractive index and transparency in the infrared region makes it an ideal platform to implement nanostructures for novel optical devices. We fabricated silicon photonic crystals and experimentally demonstrated negative refraction and self-collimation. We also used heterodyne near-field scanning optical microscope to directly visualize the anomalous wavefronts. When the periodicity is much smaller than wavelength, silicon photonic crystal can be described by the effective medium theory. By engineering effective refractive index with silicon nanorod size, we demonstrated an all-dielectric cloak structure which can hide objects in front of a highly reflecting plane. The work discussed in this review shows the powerful design flexibility and versatility of silicon nanostructures

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

Science.gov (United States)

Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

2010-01-01

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Ultrafast all-optical order-to-chaos transition in silicon photonic crystal chips

KAUST Repository

Bruck, Roman

2016-06-08

The interaction of light with nanostructured materials provides exciting new opportunities for investigating classical wave analogies of quantum phenomena. A topic of particular interest forms the interplay between wave physics and chaos in systems where a small perturbation can drive the behavior from the classical to chaotic regime. Here, we report an all-optical laser-driven transition from order to chaos in integrated chips on a silicon photonics platform. A square photonic crystal microcavity at telecom wavelengths is tuned from an ordered into a chaotic regime through a perturbation induced by ultrafast laser pulses in the ultraviolet range. The chaotic dynamics of weak probe pulses in the near infrared is characterized for different pump-probe delay times and at various positions in the cavity, with high spatial accuracy. Our experimental analysis, confirmed by numerical modelling based on random matrices, demonstrates that nonlinear optics can be used to control reversibly the chaotic behavior of light in optical resonators. (Figure presented.) . © 2016 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Reconfigurable c-Si/Au hybrid nanoantenna

Science.gov (United States)

Chebykin, A. V.; Zalogina, A. S.; Zuev, D. A.; Makarov, S. V.

2017-09-01

We have performed numerical optimization of hybrid c-Si/Au nanoantenna's geometry to improve efficiency of NV-centers radiation. We have shown that Purcell factor at the wavelength 635 nm can be as much as 4550 for point light emitter placed in the gap between gold spherical nanoparticle and truncated silicon nanocone. We have demonstrated that electric field enhancement can reach a value of 12.9 at the wavelength of NV-center pumping, 532 nm. Our results can be useful for the development of more efficient sources of single photons based on NV-centers in nanodiamonds.

Photothermal and biodegradable polyaniline/porous silicon hybrid nanocomposites as drug carriers for combined chemo-photothermal therapy of cancer.

Science.gov (United States)

Xia, Bing; Wang, Bin; Shi, Jisen; Zhang, Yu; Zhang, Qi; Chen, Zhenyu; Li, Jiachen

2017-03-15

To develop photothermal and biodegradable nanocarriers for combined chemo-photothermal therapy of cancer, polyaniline/porous silicon hybrid nanocomposites had been successfully fabricated via surface initiated polymerization of aniline onto porous silicon nanoparticles in our experiments. As-prepared polyaniline/porous silicon nanocomposites could be well dispersed in aqueous solution without any extra hydrophilic surface coatings, and showed a robust photothermal effect under near-infrared (NIR) laser irradiation. Especially, after an intravenous injection into mice, these biodegradable porous silicon-based nanocomposites as non-toxic agents could be completely cleared in body. Moreover, these polyaniline/porous silicon nanocomposites as drug carriers also exhibited an efficient loading and dual pH/NIR light-triggered release of doxorubicin hydrochloride (DOX, a model anticancer drug). Most importantly, assisted with NIR laser irradiation, polyaniline/PSiNPs nanocomposites with loading DOX showed a remarkable synergistic anticancer effect combining chemotherapy with photothermal therapy, whether in vitro or in vivo. Therefore, based on biodegradable PSiNPs-based nanocomposites, this combination approach of chemo-photothermal therapy would have enormous potential on clinical cancer treatments in the future. Considering the non-biodegradable nature and potential long-term toxicity concerns of photothermal nanoagents, it is of great interest and importance to develop biodegradable and photothermal nanoparticles with an excellent biocompatibility for their future clinical applications. In our experiments, we fabricated porous silicon-based hybrid nanocomposites via surface initiated polymerization of aniline, which showed an excellent photothermal effect, aqueous dispersibility, biodegradability and biocompatibility. Furthermore, after an efficient loading of DOX molecules, polyaniline/porous silicon nanocomposites exhibited the remarkable synergistic anticancer

Analysis and design of tunable wideband microwave photonics phase shifter based on Fabry-Perot cavity and Bragg mirrors in silicon-on-insulator waveguide.

Science.gov (United States)

Qu, Pengfei; Zhou, Jingran; Chen, Weiyou; Li, Fumin; Li, Haibin; Liu, Caixia; Ruan, Shengping; Dong, Wei

2010-04-20

We designed a microwave (MW) photonics phase shifter, consisting of a Fabry-Perot filter, a phase modulation region (PMR), and distributed Bragg reflectors, in a silicon-on-insulator rib waveguide. The thermo-optics effect was employed to tune the PMR. It was theoretically demonstrated that the linear MW phase shift of 0-2pi could be achieved by a refractive index variation of 0-9.68x10(-3) in an ultrawideband (about 38?GHz-1.9?THz), and the corresponding tuning resolution was about 6.92 degrees / degrees C. The device had a very compact size. It could be easily integrated in silicon optoelectronic chips and expected to be widely used in the high-frequency MW photonics field.

Topological Order in Silicon Photonics

Science.gov (United States)

2017-02-07

photonic edge states and quantum emitters [ S. Barik , H. Miyake, W. DeGottardi, E. Waks and M. Hafezi, New J. Phys., 18, 11301 (2016) ]. Entanglement... Barik , H. Miyake, W. DeGottardi, E. Waks, and M. Hafezi “Two-Dimensionally Confined Topological Edge States in Photonic Crystals”, New J. Phys., 18

III–V quantum light source and cavity-QED on Silicon

Science.gov (United States)

Luxmoore, I. J.; Toro, R.; Pozo-Zamudio, O. Del; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. PMID:23393621

III-V quantum light source and cavity-QED on silicon.

Science.gov (United States)

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Silicon photonic resonator for label-free bio-sensing application

Science.gov (United States)

Udomsom, Suruk; Mankong, Ukrit; Theera-Umpon, Nipon; Ittipratheep, Nattapol; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu

2018-03-01

In medical diagnostics there is an increasing demand for biosensors that can specifically detect biological analytes in a fluid. Especially label-free sensing, consistings of a transducer with biorecognition molecules immobilized on its surface without relying on fluorescent dye. In this paper we study the design and fabrication of a silicon nanowire photonic ring resonator and its feasibility as a biosensor. We have simulated and fabricated racetrack ring resonators which have a few tenths of micrometer gap, up to 0.5 μm between the input / output waveguides and the resonators. It is found that the devices can be designed with large Q factors. Sensitivity to biomaterial detection has been simulated for antibody (goat anti-mouse IgG) - antigen (mouse IgG) using 3-dimensional Finite Difference Time Domain technique. The simulated results show that the ring resonator has a response 15 nm resonance shift per refractive index unit. Antibody coating method is also discussed in this paper which can be applied to other antibody-antigen types.

Extraordinary Light-Trapping Enhancement in Silicon Solar Cell Patterned with Graded Photonic Super-Crystals

Directory of Open Access Journals (Sweden)

Safaa Hassan

2017-12-01

Full Text Available Light-trapping enhancement in newly discovered graded photonic super-crystals (GPSCs with dual periodicity and dual basis is herein explored for the first time. Broadband, wide-incident-angle, and polarization-independent light-trapping enhancement was achieved in silicon solar cells patterned with these GPSCs. These super-crystals were designed by multi-beam interference, rendering them flexible and efficient. The optical response of the patterned silicon solar cell retained Bloch-mode resonance; however, light absorption was greatly enhanced in broadband wavelengths due to the graded, complex unit super-cell nanostructures, leading to the overlap of Bloch-mode resonances. The broadband, wide-angle light coupling and trapping enhancement mechanism are understood to be due to the spatial variance of the index of refraction, and this spatial variance is due to the varying filling fraction, the dual basis, and the varying lattice constants in different directions.

Fγ: A new observable for photon-hadron discrimination in hybrid air shower events

Science.gov (United States)

Niechciol, M.; Risse, M.; Ruehl, P.; Settimo, M.; Younk, P. W.; Yushkov, A.

2018-01-01

To search for ultra-high-energy photons in primary cosmic rays, air shower observables are needed that allow a good separation between primary photons and primary hadrons. We present a new observable, Fγ, which can be extracted from ground-array data in hybrid events, where simultaneous measurements of the longitudinal and the lateral shower profile are performed. The observable is based on a template fit to the lateral distribution measured by the ground array with the template taking into account the complementary information from the measurement of the longitudinal profile, i.e. the primary energy and the geometry of the shower. Fγ shows a very good photon-hadron separation, which is even superior to the separation given by the well-known Xmax observable (the atmospheric depth of the shower maximum). At energies around 1 EeV (10 EeV), Fγ provides a background rejection better than 97.8 % (99.9 %) at a signal efficiency of 50 %. Advantages of the observable Fγ are its technical stability with respect to irregularities in the ground array (i.e. missing or temporarily non-operating stations) and that it can be applied over the full energy range accessible to the air shower detector, down to its threshold energy. Furthermore, Fγ complements nicely to Xmax such that both observables can well be combined to achieve an even better discrimination power, exploiting the rich information available in hybrid events.

Glass-embedded two-dimensional silicon photonic crystal devices with a broad bandwidth waveguide and a high quality nanocavity.

Science.gov (United States)

Jeon, Seung-Woo; Han, Jin-Kyu; Song, Bong-Shik; Noda, Susumu

2010-08-30

To enhance the mechanical stability of a two-dimensional photonic crystal slab structure and maintain its excellent performance, we designed a glass-embedded silicon photonic crystal device consisting of a broad bandwidth waveguide and a nanocavity with a high quality (Q) factor, and then fabricated the structure using spin-on glass (SOG). Furthermore, we showed that the refractive index of the SOG could be tuned from 1.37 to 1.57 by varying the curing temperature of the SOG. Finally, we demonstrated a glass-embedded heterostructured cavity with an ultrahigh Q factor of 160,000 by adjusting the refractive index of the SOG.

Photonic Design for Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Kosten, E.; Callahan, D.; Horowitz, K.; Pala, R.; Atwater, H.

2014-08-28

We describe photonic design approaches for silicon photovoltaics including i) trapezoidal broadband light trapping structures ii) broadband light trapping with photonic crystal superlattices iii) III-V/Si nanowire arrays designed for broadband light trapping.

Frequency conversion through spontaneous degenerate four wave mixing in large mode area hybrid photonic crystal fibers

DEFF Research Database (Denmark)

Petersen, Sidsel Rübner; Alkeskjold, Thomas Tanggaard; Olausson, Christina Bjarnal Thulin

2014-01-01

Frequency conversion through spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers. Different FWM processes are observed, phasematching between fiber modes of orthogonal polarization, intermodal phasematching across bandgaps, and intramodal...

Topology Optimized Photonic Wire Splitters

DEFF Research Database (Denmark)

Frandsen, Lars Hagedorn; Borel, Peter Ingo; Jensen, Jakob Søndergaard

2006-01-01

Photonic wire splitters have been designed using topology optimization. The splitters have been fabricated in silicon-on-insulator material and display broadband low-loss 3dB splitting in a bandwidth larger than 100 nm.......Photonic wire splitters have been designed using topology optimization. The splitters have been fabricated in silicon-on-insulator material and display broadband low-loss 3dB splitting in a bandwidth larger than 100 nm....

Study on Production of Silicon Nanoparticles from Quartz Sand for Hybrid Solar Cell Applications

Science.gov (United States)

Arunmetha, S.; Vinoth, M.; Srither, S. R.; Karthik, A.; Sridharpanday, M.; Suriyaprabha, R.; Manivasakan, P.; Rajendran, V.

2018-01-01

Nano silicon (nano Si) particles were directly prepared from natural mineral quartz sand and thereafter used to fabricate the hybrid silicon solar cells. Here, in this preparation technique, two process stages were involved. In the first stage, the alkaline extraction and acid precipitation processes were applied on quartz sand to fetch silica nanoparticles. In the second stage, magnesiothermic and modified magnesiothermic reduction reactions were applied on nano silica particles to prepare nano Si particles. The effect of two distinct reduction methodologies on nano Si particle preparation was compared. The magnesiothermic and modified magnesiothermic reductions in the silica to silicon conversion process were studied with the help of x-ray diffraction (XRD) with intent to study the phase changes during the reduction reaction as well as its crystalline nature in the pure silicon phase. The particles consist of a combination of fine particles with spherical morphology. In addition to this, the optical study indicated an increase in visible light absorption and also increases the performance of the solar cell. The obtained nano Si particles were used as an active layer to fabricate the hybrid solar cells (HSCs). The obtained results confirmed that the power conversion efficiency (PCE) of the magnesiothermically modified nano Si cells (1.06%) is much higher as compared to the nano Si cells that underwent magnesiothermic reduction (1.02%). Thus, this confirms the increased PCE of the investigated nano Si solar cell up to 1.06%. It also revealed that nano Si behaved as an electron acceptor and transport material. The present study provided valuable insights and direction for the preparation of nano Si particles from quartz sand, including the influence of process methods. The prepared nano Si particles can be utilized for HSCs and an array of portable electronic devices.

Silicon photonic transceiver circuit for high-speed polarization-based discrete variable quantum key distribution.

Science.gov (United States)

Cai, Hong; Long, Christopher M; DeRose, Christopher T; Boynton, Nicholas; Urayama, Junji; Camacho, Ryan; Pomerene, Andrew; Starbuck, Andrew L; Trotter, Douglas C; Davids, Paul S; Lentine, Anthony L

2017-05-29

We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.

Designing High-Efficiency Thin Silicon Solar Cells Using Parabolic-Pore Photonic Crystals

Science.gov (United States)

Bhattacharya, Sayak; John, Sajeev

2018-04-01

We demonstrate the efficacy of wave-interference-based light trapping and carrier transport in parabolic-pore photonic-crystal, thin-crystalline silicon (c -Si) solar cells to achieve above 29% power conversion efficiencies. Using a rigorous solution of Maxwell's equations through a standard finite-difference time domain scheme, we optimize the design of the vertical-parabolic-pore photonic crystal (PhC) on a 10 -μ m -thick c -Si solar cell to obtain a maximum achievable photocurrent density (MAPD) of 40.6 mA /cm2 beyond the ray-optical, Lambertian light-trapping limit. For a slanted-parabolic-pore PhC that breaks x -y symmetry, improved light trapping occurs due to better coupling into parallel-to-interface refraction modes. We achieve the optimum MAPD of 41.6 mA /cm2 for a tilt angle of 10° with respect to the vertical axis of the pores. This MAPD is further improved to 41.72 mA /cm2 by introducing a 75-nm SiO2 antireflective coating on top of the solar cell. We use this MAPD and the associated charge-carrier generation profile as input for a numerical solution of Poisson's equation coupled with semiconductor drift-diffusion equations using a Shockley-Read-Hall and Auger recombination model. Using experimentally achieved surface recombination velocities of 10 cm /s , we identify semiconductor doping profiles that yield power conversion efficiencies over 29%. Practical considerations of additional upper-contact losses suggest efficiencies close to 28%. This improvement beyond the current world record is largely due to an open-circuit voltage approaching 0.8 V enabled by reduced bulk recombination in our thin silicon architecture while maintaining a high short-circuit current through wave-interference-based light trapping.

Plasmonic-photonic crystal coupled nanolaser

International Nuclear Information System (INIS)

Zhang, Taiping; Callard, Ségolène; Jamois, Cécile; Chevalier, Céline; Feng, Di; Belarouci, Ali

2014-01-01

We propose and demonstrate a hybrid photonic-plasmonic nanolaser that combines the light harvesting features of a dielectric photonic crystal cavity with the extraordinary confining properties of an optical nano-antenna. For this purpose, we developed a novel fabrication method based on multi-step electron-beam lithography. We show that it enables the robust and reproducible production of hybrid structures, using a fully top-down approach to accurately position the antenna. Coherent coupling of the photonic and plasmonic modes is highlighted and opens up a broad range of new hybrid nanophotonic devices. (paper)

Photonic crystal waveguides in PECVD glass

DEFF Research Database (Denmark)

Liu, Haoling; Frandsen, Lars Hagedorn; Têtu, Amélie

Silicon oxynitride (SiON) on silicon has found wide use as a robust and versatileplatform for integrated, optical devices. With plasma-enhanced chemical vapourdeposition (PECVD) the refractive index can be varied all the way from 1.5 (pure silica,SiO2) to 2.0 (pure silicon nitride, Si3N4). We have...... fabricated glasses with refractive indexup to approximately 1.75, with which value it is possible to fabricate photonic crystalwaveguides. These structures have the advantage of being transparent in the whole of thevisible region, which makes them different from photonic crystals made...

Analysis and Design of Manycore Processor-to-DRAM Opto-Electrical Networks with Integrated Silicon Photonics

Science.gov (United States)

2009-12-24

4th edition, 2007. •A\\ [13] A Joshi, C Batten, Y Kwon, S Beamer, Imran Shamim , Krste Asanovic, and Vladimir Sto- janovic. Silicon-photonic clos...W911NF-08-l-0134andW911NF-08-l-0139 6. AUTHOR( S ) Vladimir Stojanovic and Krste Asanovic 7. PERFORMING ORGANIZATION NAME( S ) AND ADDRESSES) MIT, 77...MONITORING AGENCY NAME( S ) AND ADDRESS(ES) U. S . Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 10. SPONSORTNG/ MONITORING

Experimental study of the evanescent-wave photonic sensors response in presence of molecular beacon conformational changes.

Science.gov (United States)

Ruiz-Tórtola, Ángela; Prats-Quílez, Francisco; Gónzalez-Lucas, Daniel; Bañuls, María-José; Maquieira, Ángel; Wheeler, Guy; Dalmay, Tamas; Griol, Amadeu; Hurtado, Juan; Bohlmann, Helge; Götzen, Reiner; García-Rupérez, Jaime

2018-04-17

An experimental study of the influence of the conformational change suffered by molecular beacon (MB) probes -upon the biorecognition of nucleic acid target oligonucleotides over evanescent wave photonic sensors- is reported. To this end, high sensitivity photonic sensors based on silicon photonic bandgap (PBG) structures were used, where the MB probes were immobilized via their 5' termination. Those MBs incorporate a biotin moiety close to their 3' termination in order to selectively bind a streptavidin molecule to them. The different photonic sensing responses obtained towards the target oligonucleotide detection, when the streptavidin molecule was bound to the MB probes or not, demonstrate the conformational change suffered by the MB upon hybridization, which promotes the displacement of the streptavidin molecule away from the surface of the photonic sensing structure. Schematic diagram of the PBG sensing structure on which the streptavidin-labeled MB probes were immobilized. This article is protected by copyright. All rights reserved.

Ka-band to L-band frequency down-conversion based on III-V-on-silicon photonic integrated circuits

Science.gov (United States)

Van Gasse, K.; Wang, Z.; Uvin, S.; De Deckere, B.; Mariën, J.; Thomassen, L.; Roelkens, G.

2017-12-01

In this work, we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we demonstrate frequency conversion using an integrated mode-locked laser and integrated modulator. In our experiments, five channels in the Ka-band (27.5-30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of - 20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a positive conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

Multiple-Event, Single-Photon Counting Imaging Sensor

Science.gov (United States)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Polarization Converter with Controllable Birefringence Based on Hybrid All-Dielectric-Graphene Metasurface

Science.gov (United States)

Owiti, Edgar O.; Yang, Hanning; Liu, Peng; Ominde, Calvine F.; Sun, Xiudong

2018-02-01

Previous studies on hybrid dielectric-graphene metasurfaces have been used to implement induced transparency devices, while exhibiting high Q-factors based on trapped magnetic resonances. Typically, the transparency windows are single wavelength and less appropriate for polarization conversion structures. In this work, a quarter-wave plate based on a hybrid silicon-graphene metasurface with controllable birefringence is numerically designed. The phenomena of trapped magnetic mode resonance and high Q-factors are modulated by inserting graphene between silicon and silica. This results in a broader transmission wavelength in comparison to the all-dielectric structure without graphene. The birefringence tunability is based on the dimensions of silicon and the Fermi energy of graphene. Consequently, a linear-to-circular polarization conversion is achieved at a high degree of 96%, in the near-infrared. Moreover, the polarization state of the scattered light is switchable between right and left hand circular polarizations, based on an external gate biasing voltage. Unlike in plasmonic metasurfaces, these achievements demonstrate an efficient structure that is free from radiative and ohmic losses. Furthermore, the ultrathin thickness and the compactness of the structure are demonstrated as key components in realizing integrable and CMOS compatible photonic sensors.

Porous silicon-VO{sub 2} based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

Energy Technology Data Exchange (ETDEWEB)

Antunez, E. E.; Salazar-Kuri, U.; Estevez, J. O.; Basurto, M. A.; Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, Instituto de Investigación en Ciencias Básicas y Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Mor. 62209 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Mor. 62580 (Mexico); Jiménez Sandoval, S. [Laboratorio de Investigación en Materiales, Centro de Investigación y estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, Qro. 76001 (Mexico)

2015-10-07

Morphological properties of thermochromic VO{sub 2}—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO{sub 2} as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO{sub 2}(M) to a high-temperature tetragonal rutile VO{sub 2}(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching with temperature. As compared to VO{sub 2} film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology.

Silicon oxynitride based photonics

NARCIS (Netherlands)

Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

2008-01-01

Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

[Effects of exogenous silicon on the pollination and fertility characteristics of hybrid rice under heat stress during anthesis].

Science.gov (United States)

Wu, Chen-Yang; Chen, Dan; Luo, Hai-Wei; Yao, Yi-min; Wang, Zhi-Wei; Tsutomu, Matsui; Tian, Xiao-Hai

2013-11-01

Taking two medium-maturing indica rice hybrids Jinyou 63 and Shanyou 63 as test materials, this paper studied the effects of applying silicon fertilizer on the flag leaf chlorophyll content, photosynthetic properties, antioxidant enzyme activities, malondialdehyde (MDA) content, pollen vigor, anther acid invertase activity, pollination, and seed-setting of hybrid rice under the heat stress during anthesis. This study was conducted in pots and under growth chamber. Soluble solution of silicon fertilizer applied as Na2SiO3 x 9H2O was sprayed on the growing plants after early jointing stage, with three times successively and at an interval of one week. The pots were then moved into growth chamber to subject to normal temperature vs. high temperature (termed as heat stress) for five days. In treatment normal temperature, the average daily temperature was set at 26.6 degrees C, and the maximum daily temperature was set at 29.4 degres C; in treatment high temperature, the average and the maximum daily temperature were set at 33.2 degrees C and 40.1 degrees C, respectively. As compared with the control, applying silicon increased the flag leaf chlorophyll content significantly, improved the net photosynthetic rate and stomatal conductance, decreased the accumulative inter- cellular CO2 concentration, improved the leaf photosynthesis, reduced the MDA content, and improved the activities of SOD, POD and CAT under heat stress. In addition, applying silicon improved the anther acid invertase activity and the pollen vigor, increased the anther basal dehiscence width, total number of pollination per stigma, germinated number, germination rate of pollen, and percentage of florets with more than 10 germinated pollen grains, decreased the percentage of florets with fewer than 20 germinated pollen grains, and thus, alleviated the fertility loss of Jinyou 63 and Shanyou 63 under heat stress by 13.4% and 14.1%, respectively. It was suggested that spraying exogenous silicon in the

Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

Science.gov (United States)

Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

2016-09-19

Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

Plasmonic nanofocusing of light in an integrated silicon photonics platform.

Science.gov (United States)

Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

2011-07-04

The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

Hybrid Detectors for Neutrons Combining Phenyl- Polysiloxanes with 3D Silicon Detectors

International Nuclear Information System (INIS)

Dalla Palma, Matteo; Quaranta, Alberto; Collazuol, Gianmaria; Carturan, Sara; Cinausero, Marco; Gramegna, Fabiana; Marchi, Tommaso; Dalla Betta, Gian-Franco; Mendicino, Roberto; Povoli, Marco; Boscardin, Maurizio; Giacomini, Gabriele; Ronchin, Sabina; Zorzi, Nicola

2013-06-01

We report on the initial results of a research project aimed at the development hybrid detectors for fast neutrons by combining a phenyl-polysiloxane-based converter with a 3D silicon detector. To this purpose, new 3D sensor structures have been designed, fabricated and electrically tested, showing low depletion voltage and good leakage current. Moreover, the radiation detection capability of 3D sensors was tested by measuring the signals recorded from alpha particles, gamma rays, and pulsed lasers. The converter has been poured into the 3D cavities with excellent coupling, as confirmed by cross-section SEM analyses. Preliminary tests with neutrons have been carried out on the first hybrid detector prototypes at the CN accelerator of INFN LNL. The device design and technology are discussed, along with the first results from the electrical and functional characterization. (authors)

One-way optical transmission in silicon photonic crystal heterojunction with circular and square scatterers

Energy Technology Data Exchange (ETDEWEB)

Liu, Dan, E-mail: liudanhu725@126.com [School of Physics and Mechanical & Electrical Engineering, Hubei University of Education, Wuhan, 430205 (China); Hu, Sen [School of Physics and Mechanical & Electrical Engineering, Hubei University of Education, Wuhan, 430205 (China); Gao, Yihua [Wuhan National Laboratory for Optoelectronics (WNLO), School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)

2017-07-12

A 2D orthogonal square-lattice photonic crystal (PC) heterojunction consisting of circular and square air holes in silicon is presented. Band structures are calculated using the plane wave expansion method, and the transmission properties are investigated by the finite-different time-domain simulations. Thanks to the higher diffraction orders excited when the circular and square holes are interlaced along the interface, one-way transmission phenomena can exist within wide frequency regions. The higher order diffraction is further enhanced through two different interface optimization designs proposed by modifying the PC structure of the hetero-interface. An orthogonal PC heterojunction for wide-band and efficient one-way transmission is constructed, and the maximum transmissivity is up to 78%. - Highlights: • Photonic crystal heterojunction with circular and square scatterers is first studied. • One-way transmission efficiency is closely related to the hetero-interface. • Wide-band and efficient one-way transmission is realized.

SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

International Nuclear Information System (INIS)

Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M; Menichelli, D; Friedl, F

2014-01-01

Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam

SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

Energy Technology Data Exchange (ETDEWEB)

Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M [University of Florence, Firenze (Italy); Menichelli, D; Friedl, F [IBA Dosimetry, Schwarzenbruck, Bavaria (Germany)

2014-06-01

Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam.

Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

Directory of Open Access Journals (Sweden)

Daoxin Dai

2012-03-01

Full Text Available Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator, which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (demultiplexers, and high-extinction-ratio polarizers.

Third-harmonic generation in silicon and photonic crystals of macroporous silicon in the spectral intermediate-IR range; Erzeugung der Dritten Harmonischen in Silizium und Photonischen Kristallen aus makroporoesem Silizium im spektralen mittleren IR-Bereich

Energy Technology Data Exchange (ETDEWEB)

Mitzschke, Kerstin

2007-11-01

Nonlinear optical spectroscopy is a powerful method to study surface or bulk properties of condensed matter. In centrosymmetric materials like silicon even order nonlinear optical processes are forbidden. Besides self-focussing or self phase modulation third-harmonic-generation (THG) is the simplest process that can be studied. This work demonstrates that THG is a adapted non-contact and non-invasive optical method to get information about bulk structures of silicon and Photonic crystals (PC), consisting of silicon. Until now most studies are done in the visible spectral range being limited by the linear absorption losses. So the extension of THG to the IR spectral range is extremely useful. This will allow the investigation of Photonic Crystals, where frequencies near a photonic bandgap are of special interest. 2D- photonic structures under investigation were fabricated via photoelectrochemical etching of the Si (100) wafer (thickness 500 {mu}m) receiving square and hexagonal arranged pores. The typical periodicity of the structures used is 2 {mu}m and the length of the pores reached to 400 {mu}m. Because of stability the photonic structures were superimposed on silicon substrate. The experimental set-up used for the THG experiments generates tuneable picosecond IR pulses (tuning range 1500-4000 cm{sup -1}). The IR-pulse hit the sample either perpendicular to the sample surface or under an angle {theta}. The sample can be rotated (f) around the surface normal. The generated third harmonic is analysed by a polarizer, spectrally filtered by a polychromator and registered by a CCD camera. The setup can be used either in transmission or in reflection mode. Optical transmission and reflection spectra of the Si bulk correspond well with the theoretical description, a 4-fold and a 8-fold dependencies of the azimuth angle resulting in the structure of the x{sup (3)}-tensor of (100)-Si. The situation changes dramatically if the PC with hexagonal structure is investigated

Self-similar photonic crystal cavity with ultrasmall mode volume for single-photon nonlinearities

DEFF Research Database (Denmark)

Choi, Hyeongrak; Heuck, Mikkel; Englund, Dirk

2017-01-01

We propose a photonic crystal cavity design with self-similar structure to achieve ultrasmall mode volume. We describe the concept with a silicon-air nanobeam cavity at λ ∼ 1550nm, reaching a mode volume of ∼ 7.01 × 10∼5λ3.......We propose a photonic crystal cavity design with self-similar structure to achieve ultrasmall mode volume. We describe the concept with a silicon-air nanobeam cavity at λ ∼ 1550nm, reaching a mode volume of ∼ 7.01 × 10∼5λ3....

Temperature Compensated Strain Sensor Based on Cascaded Sagnac Interferometers and All-Solid Birefringent Hybrid Photonic Crystal Fibers

DEFF Research Database (Denmark)

Gu, Bobo; Yuan, Wu; He, Sailing

2012-01-01

We demonstrate a temperature compensated strain sensor with two cascaded Sagnac interferometers, that provide strain sensing and temperature compensation, respectively. The Sagnac interferometers use an all-solid hybrid photonic crystal fiber with stress-induced birefringence. The stress-induced ...

Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application

International Nuclear Information System (INIS)

Chehata, Nadia; Ltaief, Adnen; Ilahi, Bouraoui; Salem, Bassem; Bouazizi, Abdelaziz; Maaref, Hassen; Baron, Thierry

2014-01-01

Hybrid nanocomposites based on a nanoscale combination of organic and inorganic semiconductors are a promising way to enhance the performance of solar cells through a higher aspect ratio of the interface and the good processability of polymers. Nanocomposites are based on a heterojunction network between poly (2-methoxy-5-(2-ethyhexyl-oxy)-p-phenylenevinylene) (MEH-PPV) as an organic electron donor and silicon nanowires (SiNWs) as an inorganic electron acceptor. Nanowires (NWs) seem to be a promising material for this purpose, as they provide a large surface area for contact with the polymer and a designated conducting pathway whilst their volume is low. In this paper, silicon nanowires are introduced by mixing them into the polymer matrix. Hybrid nanocomposites films were deposited onto ITO substrate by spin coating method. Optical properties and photocurrent response were investigated. Charge transfer between the polymer and SiNWs has been demonstrated through photoluminescence measurements. The photocurrent density of ITO/MEH-PPV:SiNWs/Al structures have been obtained by J–V characteristics. The J sc value is about 0.39 µA/cm 2 . - Highlights: • SiNWs synthesis by Vapor–Liquid–Solid (VLS) mechanism. • SiNWs contribution to absorption spectra enhancement of MEH-PPV:SiNWs nanocomposites. • Decrease of PL intensity of MEH-PPV by addition of SiNWs. • Charge transfer process was taken place. • ITO/MEH-PPV:SiNWs/Al structure shows a photovoltaic effect, with a FF of 0.32

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Quantum photonics with quantum dots in photonic wires

DEFF Research Database (Denmark)

Munsch, Mathieu; Kuhlmann, Andreas; Cadeddu, Davide

2016-01-01

We present results from the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter’s properties with the highest sensitivity. Weperform...

Multiplexed evaluation of capture agent binding kinetics using arrays of silicon photonic microring resonators.