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Sample records for hybrid silicon avalanche

  1. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women' s Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

    2014-01-27

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  2. New method for determining avalanche breakdown voltage of silicon photomultipliers

    International Nuclear Information System (INIS)

    Chirikov-Zorin, I.

    2017-01-01

    The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDE rel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE rel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts. [ru

  3. Hybrid phase transition into an absorbing state: Percolation and avalanches

    Science.gov (United States)

    Lee, Deokjae; Choi, S.; Stippinger, M.; Kertész, J.; Kahng, B.

    2016-04-01

    Interdependent networks are more fragile under random attacks than simplex networks, because interlayer dependencies lead to cascading failures and finally to a sudden collapse. This is a hybrid phase transition (HPT), meaning that at the transition point the order parameter has a jump but there are also critical phenomena related to it. Here we study these phenomena on the Erdős-Rényi and the two-dimensional interdependent networks and show that the hybrid percolation transition exhibits two kinds of critical behaviors: divergence of the fluctuations of the order parameter and power-law size distribution of finite avalanches at a transition point. At the transition point global or "infinite" avalanches occur, while the finite ones have a power law size distribution; thus the avalanche statistics also has the nature of a HPT. The exponent βm of the order parameter is 1 /2 under general conditions, while the value of the exponent γm characterizing the fluctuations of the order parameter depends on the system. The critical behavior of the finite avalanches can be described by another set of exponents, βa and γa. These two critical behaviors are coupled by a scaling law: 1 -βm=γa .

  4. Nano-multiplication region avalanche photodiodes and arrays

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  5. Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Loudon, A.Y.

    2002-01-01

    Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

  6. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    CERN Document Server

    Saveliev, V

    2000-01-01

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  7. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    CERN Document Server

    Wegrzecka, I

    1999-01-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  8. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    Science.gov (United States)

    Wegrzecka, Iwona; Wegrzecki, Maciej

    1999-04-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  9. Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Verkhovtseva, A. V.; Gergel, V. A.

    2009-01-01

    Statistical fluctuations of the avalanche's multiplication efficiency were studied as applied to the single-photon (Geiger) mode of avalanche photodiodes. The distribution function of partial multiplication factors with an anomalously wide (of the order of the average) dispersion was obtained. Expressions for partial feedback factors were derived in terms of the average gain and the corresponding dependences on the diode's overvoltage were calculated. Final expressions for the photon-electric pulse's conversion were derived by averaging corresponding formulas over the coordinate of initiating photoelectron generation using the functions of optical photon absorption in silicon.

  10. Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

    Science.gov (United States)

    Thomas, O; Yuan, Z L; Shields, A J

    2012-01-24

    Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

  11. A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode

    International Nuclear Information System (INIS)

    Vanyushin, I. V.; Gergel, V. A.; Gontar', V. M.; Zimoglyad, V. A.; Tishin, Yu. I.; Kholodnov, V. A.; Shcheleva, I. M.

    2007-01-01

    A new discrete theoretical model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode is developed. It is shown that the spreading resistance in the substrate profoundly affects both the amplitude of a single-photon electrical pulse and the possibility of attaining the steady-state form of the avalanche breakdown excluding the Geiger mode of the photodiode's operation. The model is employed to interpret the experimental data obtained using test single-photon cells of avalanche photodiodes fabricated on the basis of the 0.25-μm silicon technology with the use of deep implantation to form the region of avalanche multiplication for the charge carriers. Excellent functional properties of the studied type of the single-photon (Geiger) cell are noted. A typical amplitude characteristic of the cell for optical radiation with the wavelength λ = 0.56 μm in the irradiance range of 10 -3 -10 2 lx is presented; this characteristic indicates that the quantum efficiency of photoconversion is extremely high

  12. The performance of photon counting imaging with a Geiger mode silicon avalanche photodiode

    International Nuclear Information System (INIS)

    Qu, Hui-Ming; Zhang, Yi-Fan; Ji, Zhong-Jie; Chen, Qian

    2013-01-01

    In principle, photon counting imaging can detect a photon. With the development of low-level-light image intensifier techniques and low-level-light detection devices, photon counting imaging can now detect photon images under extremely low illumination. Based on a Geiger mode silicon avalanche photodiode single photon counter, an experimental system for photon counting imaging was built through two-dimensional scanning of a SPAD (single photon avalanche diode) detector. The feasibility of the imaging platform was validated experimentally. Two images with different characteristics, namely, the USAF 1951 resolution test panel and the image of Lena, were chosen to evaluate the imaging performance of the experimental system. The results were compared and analysed. The imaging properties under various illumination and scanning steps were studied. The lowest illumination limit of the SPAD photon counting imaging was determined. (letter)

  13. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  14. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  15. Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.

    1983-01-01

    After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200 0 C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons

  16. Memory effect in silicon time-gated single-photon avalanche diodes

    International Nuclear Information System (INIS)

    Dalla Mora, A.; Contini, D.; Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

    2015-01-01

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons

  17. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  18. Development of a 144-channel Hybrid Avalanche Photo-Detector for Belle II ring-imaging Cherenkov counter with an aerogel radiator

    Energy Technology Data Exchange (ETDEWEB)

    Nishida, S., E-mail: shohei.nishida@kek.jp [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Adachi, I. [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Hamada, N. [Toho University, Funabashi (Japan); Hara, K. [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Iijima, T. [Nagoya University, Nagoya (Japan); Iwata, S.; Kakuno, H. [Tokyo Metropolitan University, Hachioji (Japan); Kawai, H. [Chiba University, Chiba (Japan); Korpar, S.; Krizan, P. [Jozef Stefan Institute, Ljubljana (Slovenia); Ogawa, S. [Toho University, Funabashi (Japan); Pestotnik, R.; Ŝantelj, L.; Seljak, A. [Jozef Stefan Institute, Ljubljana (Slovenia); Sumiyoshi, T. [Tokyo Metropolitan University, Hachioji (Japan); Tabata, M. [Chiba University, Chiba (Japan); Tahirovic, E. [Jozef Stefan Institute, Ljubljana (Slovenia); Yoshida, K. [Tokyo Metropolitan University, Hachioji (Japan); Yusa, Y. [Niigata University, Niigata (Japan)

    2015-07-01

    The Belle II detector, a follow up of the very successful Belle experiment, is under construction at the SuperKEKB electron–positron collider at KEK in Japan. For the PID system in the forward region of the spectrometer, a proximity-focusing ring-imaging Cherenkov counter with an aerogel radiator is being developed. For the position sensitive photon sensor, a 144-channel Hybrid Avalanche Photo-Detector has been developed with Hamamatsu Photonics K.K. In this report, we describe the specification of the Hybrid Avalanche Photo-Detector and the status of the mass production.

  19. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  20. Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology

    NARCIS (Netherlands)

    Agarwal, V.; Dutta, S; Annema, AJ; Hueting, RJE; Steeneken, P.G.; Nauta, B

    2017-01-01

    This paper presents a low power monolithically integrated optical transmitter with avalanche mode light emitting diodes in a 140 nm silicon-on-insulator CMOS technology. Avalanche mode LEDs in silicon exhibit wide-spectrum electroluminescence (400 nm < λ < 850 nm), which has a significant

  1. Hybrid Design, Procurement and Testing for the LHCb Silicon Tracker

    CERN Document Server

    Bay, A; Frei, R; Jiménez-Otero, S; Perrin, A; Tran, MT; Van Hunen, J J; Vervink, K; Vollhardt, A; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Knöpfle, K T; Löchner, S; Schmelling, M; Schwingenheuer, B; Smale, N J; Adeva, B; Esperante-Pereira, D; Lois, C; Vázquez, P; Lehner, F; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Needham, M; Steinkamp, O; Straumann, U; Volyanskyy, D; Voss, H; Wenger, A

    2005-01-01

    The Silicon Tracker of the LHCb experiment consists of four silicon detector stations positioned along the beam line of the experiment. The detector modules of each station are constructed from wide pitch silicon microstrip sensors. Located at the module's end, a polyimide hybrid is housing the front-end electronics. The assembly of the more than 600 hybrids has been outsourced to industry. We will report on the design and production status of the hybrids for the LHCb Silicon Tracker and describe the quality assurance tests. Particular emphasis is laid on the vendor qualifying and its impact on our hybrid design that we experienced during the prototyping phase.

  2. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    Science.gov (United States)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  3. Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

    2015-09-21

    Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

  4. Gallium-based avalanche photodiode optical crosstalk

    International Nuclear Information System (INIS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-01-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time

  5. Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

    Science.gov (United States)

    Kenimer, R. L.

    1988-01-01

    Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

  6. 3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for charged particle detection

    Science.gov (United States)

    Vignetti, M. M.; Calmon, F.; Pittet, P.; Pares, G.; Cellier, R.; Quiquerez, L.; Chaves de Albuquerque, T.; Bechetoille, E.; Testa, E.; Lopez, J.-P.; Dauvergne, D.; Savoy-Navarro, A.

    2018-02-01

    Single-Photon Avalanche Diodes (SPADs) are p-n junctions operated in Geiger Mode by applying a reverse bias above the breakdown voltage. SPADs have the advantage of featuring single photon sensitivity with timing resolution in the picoseconds range. Nevertheless, their relatively high Dark Count Rate (DCR) is a major issue for charged particle detection, especially when it is much higher than the incoming particle rate. To tackle this issue, we have developed a 3D Silicon Coincidence Avalanche Detector (3D-SiCAD). This novel device implements two vertically aligned SPADs featuring on-chip electronics for the detection of coincident avalanche events occurring on both SPADs. Such a coincidence detection mode allows an efficient discrimination of events related to an incoming charged particle (producing a quasi-simultaneous activation of both SPADs) from dark counts occurring independently on each SPAD. A 3D-SiCAD detector prototype has been fabricated in CMOS technology adopting a 3D flip-chip integration technique, and the main results of its characterization are reported in this work. The particle detection efficiency and noise rejection capability for this novel device have been evaluated by means of a β- strontium-90 radioactive source. Moreover the impact of the main operating parameters (i.e. the hold-off time, the coincidence window duration, the SPAD excess bias voltage) over the particle detection efficiency has been studied. Measurements have been performed with different β- particles rates and show that a 3D-SiCAD device outperforms single SPAD detectors: the former is indeed capable to detect particle rates much lower than the individual DCR observed in a single SPAD-based detectors (i.e. 2 to 3 orders of magnitudes lower).

  7. Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic-Inorganic Hybrid Structure

    Science.gov (United States)

    Abe, Tomoki; Uchida, Shigeto; Tanaka, Keita; Fujisawa, Takanobu; Kasada, Hirofumi; Ando, Koshi; Akaiwa, Kazuaki; Ichino, Kunio

    2018-05-01

    We investigated device degradation in PEDOT:PSS/ZnSSe organic-inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). ZnSSe/n-GaAs wafers were grown by molecular beam epitaxy, and PEDOT:PSS window layers were formed by inkjet technique. We observed rapid degradation with APD-mode stress (˜ 30 V) in the N2 (4 N) atmosphere, while we observed no marked change in forward bias current stress and photocurrent stress. In the case of a vacuum condition, we observed no detectable degradation in the dark avalanche current with APD-mode stress. Therefore, the degradation in the PEDOT:PSS/ZnSSe interface under the APD-mode stress was caused by the residual water vapor or oxygen in the N2 atmosphere and could be controlled by vacuum packaging.

  8. A micropixel avalanche phototransistor for time of flight measurements

    Energy Technology Data Exchange (ETDEWEB)

    Sadigov, A., E-mail: saazik@yandex.ru [National Nuclear Research Center, Baku (Azerbaijan); Institute of Radiation Problems, Baku (Azerbaijan); Suleymanov, S. [National Nuclear Research Center, Baku (Azerbaijan); Institute of Radiation Problems, Baku (Azerbaijan); Ahmadov, F. [National Nuclear Research Center, Baku (Azerbaijan); Ahmadov, G. [National Nuclear Research Center, Baku (Azerbaijan); Joint Institute for Nuclear Research, Dubna (Russian Federation); Abdullayev, K. [National Aviation Academy, Baku (Azerbaijan); Akberov, R. [National Nuclear Research Center, Baku (Azerbaijan); Institute of Radiation Problems, Baku (Azerbaijan); Heydarov, N. [National Nuclear Research Center, Baku (Azerbaijan); Madatov, R. [Institute of Radiation Problems, Baku (Azerbaijan); Mukhtarov, R. [National Aviation Academy, Baku (Azerbaijan); Nazarov, M.; Valiyev, R. [National Nuclear Research Center, Baku (Azerbaijan)

    2017-02-11

    This paper presents results of studies of the silicon based new micropixel avalanche phototransistor (MAPT). MAPT is a modification of well-known silicon photomultipliers (SiPMs) and differs since each photosensitive pixel of the MAPT operates in Geiger mode and comprises an individual micro-transistor operating in binary mode. This provides a high amplitude single photoelectron signal with significantly shorter rise time. The obtained results are compared with appropriate parameters of known SiPMs. - Highlights: • A new photo detector – micropixel avalanche phototransistor was developed. • MAPT has a matrix of microtransistors with fast output. • In these modules the duration of the leading edge of the signal from the photodetectors are not worse than 50–100 ps.

  9. Development of advanced solid state radiation detectors: mercuric iodide and high gain silicon avalanche structures. Annual progress report, December 1, 1984-November 30, 1985

    International Nuclear Information System (INIS)

    Huth, G.C.; Dabrowski, A.J.

    1986-04-01

    This report covers the period from December 1984 through November 1985 for this research project sponsored by the Office of Health and Environmental Research of the Dept. of Energy. This work has two primary research objectives. The first is continuing development of the material mercuric iodide (HgI 2 ) and its applications to energy dispersive x-ray analysis and gamma ray spectrometry. The second task involves investigation of silicon ''avalanche'' (internal electron gain) radiation detector structures fabricated from new neutron transmutation doped (NTD) silicon single crystal

  10. Hybrid integrated single-wavelength laser with silicon micro-ring reflector

    Science.gov (United States)

    Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

    2018-02-01

    A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

  11. A silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

    International Nuclear Information System (INIS)

    Hsieh, C.L.; Haskovec, J.; Carlstrom, T.N.; DeBoo, J.C.; Greenfield, C.M.; Snider, R.T.; Trost, P.

    1990-06-01

    A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N = 1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low frequency background light component. The background signal is amplified with a computer controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Z eff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis. 4 refs., 5 figs

  12. Development of a 13-in. Hybrid Avalanche Photo-Detector (HAPD) for a next generation water Cherenkov detector

    International Nuclear Information System (INIS)

    Nakayama, H.; Kusaka, A.; Kakuno, H.; Abe, T.; Iwasaki, M.; Aihara, H.; Shiozawa, M.; Tanaka, M.; Kyushima, H.; Suyama, M.; Kawai, Y.

    2006-01-01

    We have developed a 13-in. Hybrid Avalanche Photo-Detector (HAPD) for photosensors in next generation water Cherenkov type detectors. We study the performance of the HAPD and the results show good time resolution better than σ=1ns, good sensitivity for single photon detection, wide dynamic range, and good uniformity on the photocathode. The HAPD is also expected to be less expensive than large PMTs because of its simpler structure without dynodes

  13. Epitaxial silicon semiconductor detectors, past developments, future prospects

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

  14. Optical performance of hybrid porous silicon-porous alumina multilayers

    Science.gov (United States)

    Cencha, L. G.; Antonio Hernández, C.; Forzani, L.; Urteaga, R.; Koropecki, R. R.

    2018-05-01

    In this work, we study the optical response of structures involving porous silicon and porous alumina in a multi-layered hybrid structure. We performed a rational design of the optimal sequence necessary to produce a high transmission and selective filter, with potential applications in chemical and biosensors. The combination of these porous materials can be used to exploit its distinguishing features, i.e., high transparency of alumina and high refractive index of porous silicon. We assembled hybrid microcavities with a central porous alumina layer between two porous silicon Bragg reflectors. In this way, we constructed a Fabry-Perot resonator with high reflectivity and low absorption that improves the quality of the filter compared to a microcavity built only with porous silicon or porous alumina. We explored a simpler design in which one of the Bragg reflectors is replaced by the aluminium that remains bound to the alumina after its fabrication. We theoretically explored the potential of the proposal and its limitations when considering the roughness of the layers. We found that the quality of a microcavity made entirely with porous silicon shows a limit in the visible range due to light absorption. This limitation is overcome in the hybrid scheme, with the roughness of the layers determining the ultimate quality. Q-factors of 220 are experimentally obtained for microcavities supported on aluminium, while Q-factors around 600 are reached for microcavities with double Bragg reflectors, centred at 560 nm. This represents a four-fold increase with respect to the optimal porous silicon microcavity at this wavelength.

  15. Silicon photon-counting avalanche diodes for single-molecule fluorescence spectroscopy

    Science.gov (United States)

    Michalet, Xavier; Ingargiola, Antonino; Colyer, Ryan A.; Scalia, Giuseppe; Weiss, Shimon; Maccagnani, Piera; Gulinatti, Angelo; Rech, Ivan; Ghioni, Massimo

    2014-01-01

    Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements. PMID:25309114

  16. Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

    International Nuclear Information System (INIS)

    Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

    1992-01-01

    Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

  17. A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

    Science.gov (United States)

    Gasmi, Khaled

    2018-02-01

    An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

  18. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor

    Science.gov (United States)

    2015-07-21

    Hybrid Biosensor Jieun Lee1,2, Jaeman Jang1, Bongsik Choi1, Jinsu Yoon1, Jee-Yeon Kim3, Yang-Kyu Choi3, Dong Myong Kim1, Dae Hwan Kim1 & Sung-Jin Choi1...This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response...of field-effect-transistor (FET)-based biosensors . The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential

  19. Avalanche diode having reduced dark current and method for its manufacture

    Science.gov (United States)

    Davids, Paul; Starbuck, Andrew Lee; Pomerene, Andrew T. S.

    2017-08-29

    An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

  20. Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications

    Science.gov (United States)

    Moffat, N.; Bates, R.; Bullough, M.; Flores, L.; Maneuski, D.; Simon, L.; Tartoni, N.; Doherty, F.; Ashby, J.

    2018-03-01

    A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles which demonstrate the desired operational characteristics of high breakdown voltage (500 V) and a gain of 10 at 200 V reverse bias for X-ray detection. The first low gain avalanche detectors fabricated by Micron Semiconductor Ltd are presented. The doping profiles of the multiplication junctions were measured with SIMS and reproduced by simulating the full fabrication process which enabled further development of the manufacturing process. The detectors are 300 μm thick p-type silicon with a resistivity of 8.5 kΩcm, which fully depletes at 116 V. The current characteristics are presented and demonstrate breakdown voltages in excess of 500 V and a current density of 40 to 100 nAcm‑2 before breakdown measured at 20oC. The gain of the LGAD has been measured with a red laser (660 nm) and shown to be between 9 and 12 for an external bias voltage range from 150 V to 300 V.

  1. A hybrid pulse combining topology utilizing the combination of modularized avalanche transistor Marx circuits, direct pulse adding, and transmission line transformer.

    Science.gov (United States)

    Li, Jiangtao; Zhao, Zheng; Sun, Yi; Liu, Yuhao; Ren, Ziyuan; He, Jiaxin; Cao, Hui; Zheng, Minjun

    2017-03-01

    Numerous applications driven by pulsed voltage require pulses to be with high amplitude, high repetitive frequency, and narrow width, which could be satisfied by utilizing avalanche transistors. The output improvement is severely limited by power capacities of transistors. Pulse combining is an effective approach to increase the output amplitude while still adopting conventional pulse generating modules. However, there are drawbacks in traditional topologies including the saturation tendency of combining efficiency and waveform oscillation. In this paper, a hybrid pulse combining topology was adopted utilizing the combination of modularized avalanche transistor Marx circuits, direct pulse adding, and transmission line transformer. The factors affecting the combining efficiency were determined including the output time synchronization of Marx circuits, and the quantity and position of magnetic cores. The numbers of the parallel modules and the stages were determined by the output characteristics of each combining method. Experimental results illustrated the ability of generating pulses with 2-14 kV amplitude, 7-11 ns width, and a maximum 10 kHz repetitive rate on a matched 50-300 Ω resistive load. The hybrid topology would be a convinced pulse combining method for similar nanosecond pulse generators based on the solid-state switches.

  2. Active graphene-silicon hybrid diode for terahertz waves.

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  3. Organophosphonate functionalized silicon nanowires for DNA hybridization studies

    Energy Technology Data Exchange (ETDEWEB)

    Pedone, Daniel; Cattani Scholz, Anna; Birner, Stefan; Abstreiter, Gerhard [WSI, TU Muenchen (Germany); Dubey, Manish; Schwartz, Jeffrey [Princeton University, NJ (United States); Tornow, Marc [IHT, TU Braunschweig (Germany)

    2007-07-01

    Semiconductor nanowire field effect devices have great appeal for label-free sensing applications due to their sensitivity to surface potential changes that may originate from charged adsorbates. In addition to requiring high sensitivity, suitable passivation and functionalization of the semiconductor surface is obligatory. We have fabricated both freely suspended and oxide-supported silicon nanowires from Silicon-on-Insulator substrates using standard nanopatterning methods (EBL, RIE) and sacrificial oxide layer etching. Subsequent to nanofabrication, the devices were first coated with an hydroxyalkylphosphonate monolayer and then bound via bifunctional linker groups to single stranded DNA or PNA oligonucleotides, respectively. We investigated DNA hybridization on such functionalized nanowires using a difference resistance setup, where subtracting the reference signal from a second wire could be used to exclude most non-specific effects. A net change in surface potential on the order of a few mV could be detected upon addition of the complementary DNA strand. This surface potential change corresponds to the hybridization of about 10{sup 10}cm{sup -2} probe strands according to our model calculations that takes into account the entire hybrid system in electrolyte solution.

  4. Dealing with the white death: avalanche risk management for traffic routes.

    Science.gov (United States)

    Rheinberger, Christoph M; Bründl, Michael; Rhyner, Jakob

    2009-01-01

    This article discusses mitigation strategies to protect traffic routes from snow avalanches. Up to now, mitigation of snow avalanches on many roads and railways in the Alps has relied on avalanche sheds, which require large initial investments resulting in high opportunity costs. Therefore, avalanche risk managers have increasingly adopted organizational mitigation measures such as warning systems and closure policies instead. The effectiveness of these measures is, however, greatly dependent on human decisions. In this article, we present a method for optimizing avalanche mitigation for traffic routes in terms of both their risk reduction impact and their net benefit to society. First, we introduce a generic framework for assessing avalanche risk and for quantifying the impact of mitigation. This allows for sound cost-benefit comparisons between alternative mitigation strategies. Second, we illustrate the framework with a case study from Switzerland. Our findings suggest that site-specific characteristics of avalanche paths, as well as the economic importance of a traffic route, are decisive for the choice of optimal mitigation strategies. On routes endangered by few avalanche paths with frequent avalanche occurrences, structural measures are most efficient, whereas reliance on organizational mitigation is often the most appropriate strategy on routes endangered by many paths with infrequent or fuzzy avalanche risk. Finally, keeping a traffic route open may be very important for tourism or the transport industry. Hence, local economic value may promote the use of a hybrid strategy that combines organizational and structural measures to optimize the resource allocation of avalanche risk mitigation.

  5. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

    Science.gov (United States)

    Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2016-08-22

    We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

  6. Optimization of hybrid organic/inorganic poly(3-hexylthiophene-2,5-diyl)/silicon solar cells

    Science.gov (United States)

    Weingarten, Martin; Sanders, Simon; Stümmler, Dominik; Pfeiffer, Pascal; Vescan, Andrei; Kalisch, Holger

    2016-04-01

    In the last years, hybrid organic/silicon solar cells have attracted great interest in photovoltaic research due to their potential to become a low-cost alternative for the conventionally used silicon pn-junction solar cells. This work is focused on hybrid solar cells based on the polymer poly(3-hexylthiophene-2,5-diyl), which was deposited on n-doped crystalline silicon via spin-coating under ambient conditions. By employing an anisotropic etching step with potassium hydroxide (KOH), the reflection losses at the silicon surface were reduced. Hereby, the short-circuit current density of the hybrid devices was increased by 31%, leading to a maximum power conversion efficiency (PCE) of 13.1% compared to a PCE of 10.7% for the devices without KOH etching. In addition, the contacts were improved by replacing gold with the more conductive silver as top grid material to reduce the contact resistance and by introducing a thin (˜0.5 nm) lithium fluoride layer between the silicon and the aluminum backside contact to improve electron collection and hole blocking. Hereby, the open-circuit voltage and the fill factor of the hybrid solar cells were further improved and devices with very high PCE up to 14.2% have been realized.

  7. Studies of a hybrid avalanche photo-detector in magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Šantelj, L., E-mail: luka.santelj@kek.jp [High Energy Accelerator Research Organization (KEK) (Japan); Adachi, I. [High Energy Accelerator Research Organization (KEK) (Japan); Sokendai University (Japan); Hataya, K. [Tokyo Metropolitan University (Japan); Iori, S. [Toho University (Japan); Iwata, S.; Kakuno, H. [Tokyo Metropolitan University (Japan); Kataura, R. [Niigata University (Japan); Kawai, H. [Chiba University (Japan); Kindo, H. [Sokendai University (Japan); Korpar, S. [University of Maribor (Slovenia); Jožef Stefan Institute, Ljubljana (Slovenia); Križan, P. [Jožef Stefan Institute, Ljubljana (Slovenia); University of Ljubljana (Slovenia); Mrvar, M. [Jožef Stefan Institute, Ljubljana (Slovenia); Nath, K. [Indian Institute of Technology Guwahati (India); Nishida, S. [High Energy Accelerator Research Organization (KEK) (Japan); Sokendai University (Japan); Ogawa, S. [Niigata University (Japan); Pestotnik, R.; Stanovnik, A.; Seljak, A. [Jožef Stefan Institute, Ljubljana (Slovenia); Sumiyoshi, T. [Tokyo University of Science, Tokyo (Japan); Tabata, M. [Chiba University (Japan); and others

    2017-02-11

    For the Belle II spectrometer a proximity focusing RICH counter with an aerogel radiator (ARICH) will be employed as a PID system in the forward endcap region of the spectrometer. The main challenge was the development of a reliable multichannel sensor for single photons that operates in the high magnetic field of the spectrometer (1.5 T) and withstands the radiation levels expected at the experiment. A 144-channel Hybrid Avalanche Photo-Detector (HAPD) was developed with Hamamatsu Photonics K.K. and the mass production of ∼480 HAPDs was completed recently. While our first tests of HAPD performance in the magnetic field (before mass production) showed no issues, we lately observed a presence of very large signal pulses (∼5000× single photon signal), generated internally within about 20% of HAPDs, while operating in the magnetic field. The rate of these pulses varies from sample to sample. These pulses impact the HAPD performance in two ways: they introduce periods of dead time and, in some cases, damage to the front-end electronics was observed. Here we present conditions under which such large pulses are generated, their properties and impact on HAPD performance, and discuss possible mechanism of their origin.

  8. Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

    2016-01-01

    We report on a novel design of an on-chip optical temperature sensor based on a Mach-Zehnder interferometer configuration where the two arms consist of hybrid waveguides providing opposite temperature-dependent phase changes to enhance the temperature sensitivity of the sensor. The sensitivity...... of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

  9. A thin-film silicon/silicon hetero-junction hybrid solar cell for photoelectrochemical water-reduction applications

    NARCIS (Netherlands)

    Vasudevan, R.A.; Thanawala, Z; Han, L.; Buijs, Thom; Tan, H.; Deligiannis, D.; Perez Rodriguez, P.; Digdaya, I.A.; Smith, W.A.; Zeman, M.; Smets, A.H.M.

    2016-01-01

    A hybrid tandem solar cell consisting of a thin-film, nanocrystalline silicon top junction and a siliconheterojunction bottom junction is proposed as a supporting solar cell for photoelectrochemical applications.Tunneling recombination junction engineering is shown to be an important consideration

  10. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    Science.gov (United States)

    Aull, Brian

    2016-04-08

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  11. Effects of silicon on seed setting rate of rice intersubspecific hybrids.

    Science.gov (United States)

    Li, W-C; Zhang, L; Wang, J; Wang, D; Wang, T-X; Duan, C-X

    2015-09-01

    The present study found semi-sterility in rice intersubspecific hybrids of 'Taichung 65' x 'Guangluai 4' and 'Ludao' x 'Qiuguang'. Embryo sac fertility was evaluated using the overall staining transparent method. The results showed that the embryo sac contained a normal egg cell, normal synergid cells, polar nuclei cells, and antipodal cells, indicating that semi-sterility was caused mainly by pollen semi-sterility. In the pot experiment, the effects of silicon on the seed-setting rate of the two intersubspecific hybrids were examined. The results showed that the rate of anther dehiscence, number of pollen per stigma of Fl plants, potential of pollen grain germination, and fertility of the spikelet were significantly improved by the utilization of silicon fertilizer.

  12. Hybrid III-V Silicon Lasers

    Science.gov (United States)

    Bowers, John

    2014-03-01

    Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

  13. STUDY ON SIMULATION METHOD OF AVALANCHE : FLOW ANALYSIS OF AVALANCHE USING PARTICLE METHOD

    OpenAIRE

    塩澤, 孝哉

    2015-01-01

    In this paper, modeling for the simulation of the avalanche by a particle method is discussed. There are two kinds of the snow avalanches, one is the surface avalanche which shows a smoke-like flow, and another is the total-layer avalanche which shows a flow like Bingham fluid. In the simulation of the surface avalanche, the particle method in consideration of a rotation resistance model is used. The particle method by Bingham fluid is used in the simulation of the total-layer avalanche. At t...

  14. A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

    Science.gov (United States)

    Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

    2009-05-01

    Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

  15. Hybrid luminescent/magnetic nanostructured porous silicon particles for biomedical applications

    Science.gov (United States)

    Muñoz-Noval, Álvaro; Sánchez-Vaquero, Vanessa; Torres-Costa, Vicente; Gallach, Darío; Ferro-Llanos, Vicente; Javier Serrano, José; Manso-Silván, Miguel; García-Ruiz, Josefa Predestinación; Del Pozo, Francisco; Martín-Palma, Raúl J.

    2011-02-01

    This work describes a novel process for the fabrication of hybrid nanostructured particles showing intense tunable photoluminescence and a simultaneous ferromagnetic behavior. The fabrication process involves the synthesis of nanostructured porous silicon (NPSi) by chemical anodization of crystalline silicon and subsequent in pore growth of Co nanoparticles by electrochemically-assisted infiltration. Final particles are obtained by subsequent sonication of the Co-infiltrated NPSi layers and conjugation with poly(ethylene glycol) aiming at enhancing their hydrophilic character. These particles respond to magnetic fields, emit light in the visible when excited in the UV range, and internalize into human mesenchymal stem cells with no apoptosis induction. Furthermore, cytotoxicity in in-vitro systems confirms their biocompatibility and the viability of the cells after incorporation of the particles. The hybrid nanostructured particles might represent powerful research tools as cellular trackers or in cellular therapy since they allow combining two or more properties into a single particle.

  16. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    International Nuclear Information System (INIS)

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C.; Koeber, S.; Freude, W.; Koos, C.; Rembe, C.

    2014-01-01

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB

  17. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    Energy Technology Data Exchange (ETDEWEB)

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C. [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe (Germany); Koeber, S.; Freude, W., E-mail: christian.koos@kit.edu; Koos, C., E-mail: christian.koos@kit.edu [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen (Germany); Rembe, C. [Polytec GmbH, 76337 Waldbronn (Germany)

    2014-05-27

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB.

  18. Photon-counting monolithic avalanche photodiode arrays for the super collider

    International Nuclear Information System (INIS)

    Ishaque, A.N.; Castleberry, D.E.; Rougeot, H.M.

    1994-01-01

    In fiber tracking, calorimetry, and other high energy and nuclear physics experiments, the need arises to detect an optical signal consisting of a few photons (in some cases a single photoelectron) with a detector insensitive to magnetic fields. Previous attempts to detect a single photoelectron have involved avalanche photodiodes (APDs) operated in the Geiger mode, the visible light photon counter, and a photomultiplier tube with an APD as the anode. In this paper it is demonstrated that silicon APDs, biased below the breakdown voltage, can be used to detect a signal of a few photons with conventional pulse counting circuitry at room temperature. Moderate cooling, it is further argued, could make it possible to detect a single photoelectron. Monolithic arrays of silicon avalanche photodiodes fabricated by Radiation Monitoring Devices, Inc. (RMD) were evaluated for possible use in the Super Collider detector systems. Measurements on 3 element x 3 element (2 mm pitch) APD arrays, using pulse counting circuitry with a charge sensitive amplifier (CSA) and a Gaussian filter, are reported and found to conform to a simple noise model. The model is used to obtain the optimal operating point. Experimental results are described in Section II, modeling results in Section III, and the conclusions are summarized in Section IV

  19. Estimation of Future Demand for Neutron-Transmutation-Doped Silicon Caused by Development of Hybrid Electric Vehicle

    International Nuclear Information System (INIS)

    Kim, Myong Seop; Park, Sang Jun

    2008-01-01

    By using this doping method, silicon semiconductors with an extremely uniform dopant distribution can be produced. They are usually used for high power devices such as thyristor (SCR), IGBT, IGCT and GTO. Now, the demand for high power semiconductor devices has increased rapidly due to the rapid increase of the green energy technologies. Among them, the productions of hybrid cars or fuel cell engines are excessively increased to reduce the amount of discharged air pollution substances, such as carbon dioxide which causes global warming. It is known that the neutron-transmutation-doped floating-zone (FZ) silicon wafers are used in insulated-gate bipolar transistors (IGBTs) which control the speed of the electric traction motors equipped in hybrid or fuel cell vehicles. Therefore, inevitably, it can be supposed that the demand of the NTD silicon is considerably increased. However, it is considered likely that the irradiation capacity will not be large enough to meet the increasing demand. After all, the large irradiation capacity for NTD such as a reactor dedicated to the silicon irradiation will be constructed depending on the industrial demand for NTD silicon. In this work, we investigated the relationship between the hybrid electric vehicle (HEV) industry and the NTD silicon production. Also, we surveyed the prospect for the production of the HEV. Then, we deduced the worldwide demand for the NTD silicon associated with the HEV production. This work can be utilized as the basic material for the construction of the new irradiation facility such as NTD-dedicated neutron source

  20. Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Taghizadeh, Alireza

    2015-01-01

    into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has......We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light...

  1. Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.

    Science.gov (United States)

    Fegadolli, William S; Kim, Se-Heon; Postigo, Pablo Aitor; Scherer, Axel

    2013-11-15

    We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon photonics.

  2. Advanced radiation detector development mercuric iodide, silicon with internal gain, hybrid scintillator/semiconductor detectors. Comprehensive summary report, 1976-1985

    International Nuclear Information System (INIS)

    Huth, G.C.; Dabrowski, A.J.

    1985-01-01

    Accomplishments are reported in the development of a compound semi-insulator mercuric iodide (HgI 2 ) for nuclear radiation detection and spectroscopy, early lung cancer detection and localization in the uranium miner/worker population, computer digital image processing and image reconstruction research, and a concept for multiple, filtered x-ray computed tomography scanning to reveal chemical compositional information. Another area of interest is the study of new advances in the area of silicon detectors with internal gain (''avalanche'')

  3. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Directory of Open Access Journals (Sweden)

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  4. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  5. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

  6. Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

    Science.gov (United States)

    Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

    2014-11-01

    We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

  7. Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids

    International Nuclear Information System (INIS)

    Strobel, Sebastian; Hernandez, Rocio Murcia; Hansen, Allan G; Tornow, Marc

    2008-01-01

    We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10 -18 farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology

  8. Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids

    Energy Technology Data Exchange (ETDEWEB)

    Strobel, Sebastian; Hernandez, Rocio Murcia [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Hansen, Allan G; Tornow, Marc [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany)], E-mail: m.tornow@tu-bs.de

    2008-09-17

    We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10{sup -18} farad and asymmetric resistances of 30 and 300 M{omega}, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

  9. Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids.

    Science.gov (United States)

    Strobel, Sebastian; Hernández, Rocío Murcia; Hansen, Allan G; Tornow, Marc

    2008-09-17

    We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10(-18) farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

  10. Towards micro-assembly of hybrid MOEMS components on a reconfigurable silicon free-space micro-optical bench

    International Nuclear Information System (INIS)

    Bargiel, S; Gorecki, C; Rabenorosoa, K; Clévy, C; Lutz, P

    2010-01-01

    The 3D integration of hybrid chips is a viable approach for the micro-optical technologies to reduce the costs of assembly and packaging. In this paper a technology platform for the hybrid integration of MOEMS components on a reconfigurable silicon free-space micro-optical bench (FS-MOB) is presented. In this approach a desired optical component (e.g. micromirror, microlens) is integrated with a removable and adjustable silicon holder which can be manipulated, aligned and fixed in the precisely etched rail of the silicon baseplate by use of a robotic micro-assembly station. An active-based gripping system allows modification of the holder position on the baseplate with nanometre precision. The fabrication processes of the micromachined parts of the micro-optical bench, based on bulk micromachining of standard silicon wafer and SOI wafer, are described. The successful assembly of the holders, equipped with a micromirror and a refractive glass ball microlens, on the baseplate rail is demonstrated.

  11. Two orders of magnitude reduction in silicon membrane thermal conductivity by resonance hybridizations

    Science.gov (United States)

    Honarvar, Hossein; Hussein, Mahmoud I.

    2018-05-01

    The thermal conductivity of a freestanding single-crystal silicon membrane may be reduced significantly by attaching nanoscale pillars on one or both surfaces. Atomic resonances of the nanopillars form vibrons that intrinsically couple with the base membrane phonons causing mode hybridization and flattening at each coupling location in the phonon band structure. This in turn causes group velocity reductions of existing phonons, in addition to introducing new modes that get excited but are localized and do not transport energy. The nanopillars also reduce the phonon lifetimes at and around the hybridization zones. These three effects, which in principle may be tuned to take place across silicon's full spectrum, lead to a lowering of the in-plane thermal conductivity in the base membrane. Using equilibrium molecular dynamics simulations, and utilizing the concept of vibrons compensation, we report a staggering two orders of magnitude reduction in the thermal conductivity at room temperature by this mechanism. Specifically, a reduction of a factor of 130 is demonstrated for a roughly 10-nm-thick pillared membrane compared to a corresponding unpillared membrane. This amounts to a record reduction of a factor of 481 compared to bulk crystalline silicon and nearly a factor of 2 compared to bulk amorphous silicon. These results are obtained while providing a path for preserving performance with upscaling.

  12. Avalanche hazard and control in Kazakhstan

    Directory of Open Access Journals (Sweden)

    V. P. Blagoveshchensky

    2014-01-01

    Full Text Available In Kazakhstan, area of 124 thousand km2 is prone to the avalanche hazard. Avalanches are released down in mountain regions situated along the eastern boundary of Kazakhstan. Systematic studies of avalanches here were started in 1958 by explorer I.S. Sosedov; later on, I.V. Seversky continued these investigations in Institute of Geography of the Kazakh Soviet Republic. Actually, he founded the Kazakh school of the avalanche studies. In 1970–1980s, five snow-avalanche stations operated in Kazakhstan: two in Il’ Alatau, two in Zhetysu Alatau, and one in the Altai. At the present time, only two stations and two snow-avalanche posts operate, and all of them are located in Il’ Alatau.Since 1951 to 2013, 75 avalanches took place in Kazakhstan, releases of them caused significant damages. For this period 172 people happened to be under avalanches, among them 86 perished. Large avalanche catastrophes causing human victims and destructions took place in Altai in 1977 and in Karatau in 1990. In spring of 1966, only in Il’ Alatau avalanches destroyed more 600 ha of mature fir (coniferous forest, and the total area of forest destroyed here by avalanches amounts to 2677 ha or 7% of the total forest area.For 48 years of the avalanche observations, there were 15 winters with increased avalanche activity in the river Almatinka basin when total volume of released snow exceeded annual mean value of 147 thousand m3. During this period, number of days with winter avalanches changed from three (in season of 1973/1974 to 28 (1986/1987, the average for a year is 16 days for a season. Winter with the total volume of snow 1300 thousand m3 occur once in 150 years. Individual avalanches with maximal volume of 350 thousand m3 happen once in 80 years.Preventive avalanche releases aimed at protection of roads and settlements are used in Kazakhstan since 1974. These precautions are taken in Il’ Alatau, Altai, and on Kalbinsky Range. Avalanches are released with the

  13. 2D Dark-Count-Rate Modeling of PureB Single-Photon Avalanche Diodes in a TCAD Environment

    NARCIS (Netherlands)

    Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav; Witzigmann, Bernd; Osiński, Marek; Arakawa, Yasuhiko

    2018-01-01

    PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow

  14. Silicon-organic pigment material hybrids for photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Mayer, T.; Weiler, U.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstreet 23, D-64287 Darmstadt (Germany); Kelting, C.; Schlettwein, D. [Institute for Applied Physics, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Makarov, S.; Woehrle, D. [Institute of Organic and Macromolecular Chemistry, University Bremen, Leobener Street NW II, D-28359 Bremen (Germany); Abdallah, O.; Kunst, M. [Department Solar Energy, Hahn-Meitner-Institute, D-14109 Berlin (Germany)

    2007-12-14

    Hybrid materials of silicon and organic dyes have been investigated for possible application as photovoltaic material in thin film solar cells. High conversion efficiency is expected from the combination of the advantages of organic dyes for light absorption and those of silicon for charge carrier separation and transport. Low temperature remote hot wire chemical vapor deposition (HWCVD) was developed for microcrystalline silicon ({mu}c-Si) deposition using SiH{sub 4}/H{sub 2} mixtures. As model dyes zinc phthalocyanines have been evaporated from Knudsen type sources. Layers of dye on {mu}c-Si and {mu}c-Si on dye films, and composites of simultaneously and sequentially deposited Si and dye have been prepared and characterized. Raman, absorption, and photoemission spectroscopy prove the stability of the organic molecules against the rough HWCVD-Si process. Transient microwave conductivity (TRMC) indicates good electronic quality of the {mu}c-Si matrix. Energy transfer from dye to Si is indicated indirectly by luminescence and directly by photoconductivity measurements. F{sub x}ZnPc pigments with x=0,4,8,16 have been synthesized, purified and adsorbed onto H-terminated Si(1 1 1) for electronic state line up determination by photoelectron spectroscopy. For x=4 and 8 the dye frontier orbitals line up symmetrically versus the Si energy gap offering similar energetic driving forces for electron and hole injection, which is considered optimum for bulk sensitization and indicates a direction to improve the optoelectronic coupling of the organic dyes to silicon. (author)

  15. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

    Science.gov (United States)

    Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

    2017-12-13

    Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

  16. Diffusion of interstitial oxygen in silicon and germanium: a hybrid functional study

    International Nuclear Information System (INIS)

    Colleoni, Davide; Pasquarello, Alfredo

    2016-01-01

    The minimum-energy paths for the diffusion of an interstitial O atom in silicon and germanium are studied through the nudged-elastic-band method and hybrid functional calculations. The reconsideration of the diffusion of O in silicon primarily serves the purpose of validating the procedure for studying the O diffusion in germanium. Our calculations show that the minimum energy path goes through an asymmetric transition state in both silicon and germanium. The stability of these transition states is found to be enhanced by the generation of unpaired electrons in the highest occupied single-particle states. Calculated energy barriers are 2.54 and 2.14 eV for Si and Ge, in very good agreement with corresponding experimental values of 2.53 and 2.08 eV, respectively. (paper)

  17. Radiation Effects of n-type, Low Resistivity, Spiral Silicon Drift Detector Hybrid Systems

    International Nuclear Information System (INIS)

    Chen, W.; De Geronimo, G.; Carini, G.A.; Gaskin, J.A.; Keister, J.W.; Li, S.; Li, Z.; Ramsey, B.D.; Siddons, D.P.; Smith, G.C.; Verbitskaya, E.

    2011-01-01

    We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.

  18. Spectral dependence of the main parameters of ITE silicon avalanche photodiodes

    Science.gov (United States)

    Wegrzecka, Iwona; Grynglas, Maria; Wegrzecki, Maciej

    2001-08-01

    New applications for avalanche photodiodes (APDs) as in systems using visible radiation, have prompted the need for the evaluation of detection properties of ITE APDs in the 400 divided by 700 nm spectral range. The paper presents the method and result of studies on the spectral dependence of the gain, dark and noise currents, sensitivity and excess noise factor of ITE APDs. The studies have shown that ITE APDs optimized for the near IR radiation can be effectively applied in the detection of radiation above the 500 nm wavelength.

  19. Avalanche risk assessment in Russia

    Science.gov (United States)

    Komarov, Anton; Seliverstov, Yury; Sokratov, Sergey; Glazovskaya, Tatiana; Turchaniniva, Alla

    2017-04-01

    The avalanche prone area covers about 3 million square kilometers or 18% of total area of Russia and pose a significant problem in most mountain regions of the country. The constant growth of economic activity, especially in the North Caucasus region and therefore the increased avalanche hazard lead to the demand of the large-scale avalanche risk assessment methods development. Such methods are needed for the determination of appropriate avalanche protection measures as well as for economic assessments during all stages of spatial planning of the territory. The requirement of natural hazard risk assessments is determined by the Federal Law of Russian Federation. However, Russian Guidelines (SP 11-103-97; SP 47.13330.2012) are not clearly presented concerning avalanche risk assessment calculations. A great size of Russia territory, vast diversity of natural conditions and large variations in type and level of economic development of different regions cause significant variations in avalanche risk values. At the first stage of research the small scale avalanche risk assessment was performed in order to identify the most common patterns of risk situations and to calculate full social risk and individual risk. The full social avalanche risk for the territory of country was estimated at 91 victims. The area of territory with individual risk values lesser then 1×10(-6) covers more than 92 % of mountain areas of the country. Within these territories the safety of population can be achieved mainly by organizational activities. Approximately 7% of mountain areas have 1×10(-6) - 1×10(-4) individual risk values and require specific mitigation measures to protect people and infrastructure. Territories with individual risk values 1×10(-4) and above covers about 0,1 % of the territory and include the most severe and hazardous mountain areas. The whole specter of mitigation measures is required in order to minimize risk. The future development of such areas is not recommended

  20. Hybrid silicon mode-locked laser with improved RF power by impedance matching

    Science.gov (United States)

    Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

    2015-02-01

    We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

  1. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

  2. Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Toçoğlu, Ubeyd, E-mail: utocoglu@sakarya.edu.tr; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

    2016-12-15

    Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

  3. Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

    International Nuclear Information System (INIS)

    Toçoğlu, Ubeyd; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

    2016-01-01

    Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

  4. A probabilistic model for snow avalanche occurrence

    Science.gov (United States)

    Perona, P.; Miescher, A.; Porporato, A.

    2009-04-01

    Avalanche hazard forecasting is an important issue in relation to the protection of urbanized environments, ski resorts and of ski-touring alpinists. A critical point is to predict the conditions that trigger the snow mass instability determining the onset and the size of avalanches. On steep terrains the risk of avalanches is known to be related to preceding consistent snowfall events and to subsequent changes in the local climatic conditions. Regression analysis has shown that avalanche occurrence indeed correlates to the amount of snow fallen in consecutive three snowing days and to the state of the settled snow at the ground. Moreover, since different type of avalanches may occur as a result of the interactions of different factors, the process of snow avalanche formation is inherently complex and with some degree of unpredictability. For this reason, although several models assess the risk of avalanche by accounting for all the involved processes with a great detail, a high margin of uncertainty invariably remains. In this work, we explicitly describe such an unpredictable behaviour with an intrinsic noise affecting the processes leading snow instability. Eventually, this sets the basis for a minimalist stochastic model, which allows us to investigate the avalanche dynamics and its statistical properties. We employ a continuous time process with stochastic jumps (snowfalls), deterministic decay (snowmelt and compaction) and state dependent avalanche occurrence (renewals) as a minimalist model for the determination of avalanche size and related intertime occurrence. The physics leading to avalanches is simplified to the extent where only meteorological data and terrain data are necessary to estimate avalanche danger. We explore the analytical formulation of the process and the properties of the probability density function of the avalanche process variables. We also discuss what is the probabilistic link between avalanche size and preceding snowfall event and

  5. Spatial shape of avalanches

    Science.gov (United States)

    Zhu, Zhaoxuan; Wiese, Kay Jörg

    2017-12-01

    In disordered elastic systems, driven by displacing a parabolic confining potential adiabatically slowly, all advance of the system is in bursts, termed avalanches. Avalanches have a finite extension in time, which is much smaller than the waiting time between them. Avalanches also have a finite extension ℓ in space, i.e., only a part of the interface of size ℓ moves during an avalanche. Here we study their spatial shape 〈S(x ) 〉 ℓ given ℓ , as well as its fluctuations encoded in the second cumulant 〈S2(x ) 〉 ℓ c. We establish scaling relations governing the behavior close to the boundary. We then give analytic results for the Brownian force model, in which the microscopic disorder for each degree of freedom is a random walk. Finally, we confirm these results with numerical simulations. To do this properly we elucidate the influence of discretization effects, which also confirms the assumptions entering into the scaling ansatz. This allows us to reach the scaling limit already for avalanches of moderate size. We find excellent agreement for the universal shape and its fluctuations, including all amplitudes.

  6. Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture application type thin film solar cells with new structure (development of technologies to manufacture amorphous silicon and thin film poly-crystal silicon hybrid thin film solar cells); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Research and development was performed with an objective to manufacture amorphous silicon and thin film poly-crystal silicon hybrid solar cells with large area and at low cost, being a high-efficiency next generation solar cell. The research was performed based on a principle that low-cost substrates shall be used, that a manufacturing process capable of forming amorphous silicon films with large area shall be based on, and that silicon film with as thin as possible thickness shall be used. Fiscal 1997 has started research and development on making the cells hybrid with amorphous silicon cells. As a result of the research and development, such achievements have been attained as using texture structure on the rear layer in thin poly-crystal silicon film solar cells with a thickness of two microns, and having achieved conversion efficiency of 10.1% by optimizing the junction interface forming conditions. A photo-deterioration test was carried out on hybrid cells which combine the thin poly-crystal silicon film cells having STAR structure with the amorphous silicon cells. Stabilization efficiency of 11.5% was attained after light has been irradiated for 500 hours or longer. (NEDO)

  7. Behaviour of Belle II ARICH Hybrid Avalanche Photo-Detector in magnetic field

    Science.gov (United States)

    Kindo, H.; Adachi, I.; Dolenec, R.; Hataya, K.; Iori, S.; Iwata, S.; Kakuno, H.; Kataura, R.; Kawai, H.; Kobayashi, T.; Konno, T.; Korpar, S.; Kriz˘an, P.; Kumita, T.; Mrvar, M.; Nishida, S.; Ogawa, K.; Ogawa, S.; Pestotnik, R.; Šantelj, L.; Sumiyoshi, T.; Tabata, M.; Yonenaga, M.; Yusa, Y.

    2017-12-01

    The proximity-focusing Aerogel Ring-Imaging Cherenkov detector (ARICH) has been designed to separate kaons from pions in the forward end-cap of the Belle II spectrometer. The detector will be placed in 1.5 T magnetic field and must have immunity to it. In ARICH R&D, we solve the problem with new equipment called Hybrid Avalanche Photo-Detector (HAPD) which developed by Hamamatsu Photonics. Recently the production of about 500 HAPDs was completed. We test HAPDs in magnetic field in KEK. We found some HAPDs have significant amount of dead time, which reaches up to 30% in the worst case. The dead time is caused by very large (more than 10,000 times larger than a single photon signal) and frequent (∼5 Hz) signals, which make electronics paralysed. The huge signals are observed in about 30% of HAPDs. To identify the origin and understand the mechanism, we perform some extra test of HAPDs. We find a strange dependence of the huge signals to the APD bias voltage. If we reduce the bias voltage applied to one of the 4 APDs by 10 V, the frequency of the huge signals is much reduced. On the other hand, if we reduce the voltage of all the 4 HAPDs, huge signals do not decrease, or even increase in some case. We also find the huge signals seems to be related to the vacuum inside HAPD. We present about the observation of the huge signals of HAPDs in the magnetic field, and our strategy to manage it.

  8. Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

    Science.gov (United States)

    Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

    2011-12-07

    Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

  9. First results of systematic studies done with silicon photomultipliers

    International Nuclear Information System (INIS)

    Bosio, C.; Gentile, S.; Kuznetsova, E.; Meddi, F.

    2008-01-01

    Multicell avalanche photodiode structure operated in Geiger mode usually referred as silicon photomultiplier is a new intensively developing technology for photon detection. Insensitivity to magnetic fields, low operation voltage and small size make silicon photomultipliers very attractive for high-energy physics, astrophysics and medical applications. The presented results are obtained during the first steps taken in order to develop a setup and measurement procedures which allow to compare properties of diverse samples of silicon photomultipliers available on market. The response to low-intensity light was studied for silicon photomultipliers produced by CPTA (Russia), Hamamatsu (Japan), ITC-irst (Italy) and SensL (Ireland).

  10. Silicon nanowires in polymer nanocomposites for photovoltaic hybrid thin films

    International Nuclear Information System (INIS)

    Ben Dkhil, S.; Bourguiga, R.; Davenas, J.; Cornu, D.

    2012-01-01

    Highlights: ► Hybrid solar cells based on blends of poly(N-vinylcarbazole) and silicon nanowires have been fabricated. ► We have investigated the charge transfer between PVK and SiNWs by the way of the quenching of the PVK photoluminescence. ► The relation between the morphology of the composite thin films and the charge transfer between SiNWs and PVK has been examined. ► We have investigated the effects of SiNWs concentration on the photovoltaic characteristics leading to the optimization of a critical SiNWs concentration. - Abstract: Hybrid thin films combining the high optical absorption of a semiconducting polymer film and the electronic properties of silicon fillers have been investigated in the perspective of the development of low cost solar cells. Bulk heterojunction photovoltaic materials based on blends of a semiconductor polymer poly(N-vinylcarbazole) (PVK) as electron donor and silicon nanowires (SiNWs) as electron acceptor have been studied. Composite PVK/SiNWs films were cast from a common solvent mixture. UV–visible spectrometry and photoluminescence of the composites have been studied as a function of the SiNWs concentration. Photoluminescence spectroscopy (PL) shows the existence of a critical SiNWs concentration of about 10 wt % for PL quenching corresponding to the most efficient charge pair separation. The photovoltaic (PV) effect has been studied under illumination. The optimum open-circuit voltage V oc and short-circuit current density J sc are obtained for 10 wt % SiNWs whereas a degradation of these parameters is observed at higher SiNWs concentrations. These results are correlated to the formation of aggregates in the composite leading to recombination of the photogenerated charge pairs competing with the dissociation mechanism.

  11. A-centers in silicon studied with hybrid density functional theory

    KAUST Repository

    Wang, Hao; Chroneos, Alexander; Londos, C. A.; Schwingenschlö gl, Udo; Sgourou, E. N.

    2013-01-01

    Density functional theory employing hybrid functional is used to gain fundamental insight into the interaction of vacancies with oxygen interstitials to form defects known as A-centers in silicon. We calculate the formation energy of the defect with respect to the Fermi energy for all possible charge states. It is found that the neutral and doubly negatively charged A-centers dominate. The findings are analyzed in terms of the density of states and discussed in view of previous experimental and theoretical studies.

  12. A-centers in silicon studied with hybrid density functional theory

    KAUST Repository

    Wang, Hao

    2013-07-29

    Density functional theory employing hybrid functional is used to gain fundamental insight into the interaction of vacancies with oxygen interstitials to form defects known as A-centers in silicon. We calculate the formation energy of the defect with respect to the Fermi energy for all possible charge states. It is found that the neutral and doubly negatively charged A-centers dominate. The findings are analyzed in terms of the density of states and discussed in view of previous experimental and theoretical studies.

  13. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  14. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  15. Calibration of snow avalanche mathematical models using the data of real avalanches in the Ile (Zailiyskiy Alatau Range

    Directory of Open Access Journals (Sweden)

    V. P. Blagoveshchensky

    2017-01-01

    Full Text Available The calibration of the dry friction and turbulent friction coefficients is necessary for computer simulation of avalanches. The method of back calculation based on data on actual avalanches is used for this purpose. The article presents the results of the calibration of the Eglit’s and RAMMS models for Ile Alatau range condi‑ tions. The range is located in Kazakhstan. The data on six avalanches in the same avalanche site were used. Five avalanches were dry, and one avalanche was wet. Avalanches volume varied from 2000 to 12000  m3. Maximum speed avalanches were between 15 and 30  m/s, the flow height  – from 3 to 10  m. Series of back calculations with different values of the friction coefficients was made to obtain the calibrated coeffi‑ cients. The calibrated coefficients were chosen under condition of the best fit with real avalanches. The cal‑ ibrated coefficients were following. For the Eglit’s model for dry avalanches of the volume 2000–5000  m3 μ = 0.46÷0.48, k = 0.005–0.006, and the volume 8000–12000 m3 μ = 0.38÷0.42, k = 0.002÷0.003. For RAMMS model for dry avalanches of the volume of 2000–5000 m3 μ (dry friction coefficient = 0.35÷0.4, ξ (viscous friction coefficient = 1500÷2000 m/s2, and the volume 8,000–12,000 m3 μ = 0.3÷0.35, ξ = 2000÷3000 m/s2. For wet avalanches of the volume 12,000 m3 μ = 0.35, ξ = 1500 m/s2. The work on the calibration will be con‑ tinued to obtain the friction coefficients for the Eglit’s and RAMMS models. The additional data on real ava‑ lanches will be needed for this purpose.

  16. Avalanches and Criticality in Driven Magnetic Skyrmions

    Science.gov (United States)

    Díaz, S. A.; Reichhardt, C.; Arovas, D. P.; Saxena, A.; Reichhardt, C. J. O.

    2018-03-01

    We show using numerical simulations that slowly driven Skyrmions interacting with random pinning move via correlated jumps or avalanches. The avalanches exhibit power-law distributions in their duration and size, and the average avalanche shape for different avalanche durations can be scaled to a universal function, in agreement with theoretical predictions for systems in a nonequilibrium critical state. A distinctive feature of Skyrmions is the influence of the nondissipative Magnus term. When we increase the ratio of the Magnus term to the damping term, a change in the universality class of the behavior occurs, the average avalanche shape becomes increasingly asymmetric, and individual avalanches exhibit motion in the direction perpendicular to their own density gradient.

  17. Technology developments and first measurements of Low Gain Avalanche Detectors (LGAD) for high energy physics applications

    International Nuclear Information System (INIS)

    Pellegrini, G.; Fernández-Martínez, P.; Baselga, M.; Fleta, C.; Flores, D.; Greco, V; Hidalgo, S.; Mandić, I.; Kramberger, G.; Quirion, D.; Ullan, M.

    2014-01-01

    This paper introduces a new concept of silicon radiation detector with intrinsic multiplication of the charge, called Low Gain Avalanche Detector (LGAD). These new devices are based on the standard Avalanche Photo Diodes (APD) normally used for optical and X-ray detection applications. The main differences to standard APD detectors are the low gain requested to detect high energy charged particles, and the possibility to have fine segmentation pitches: this allows fabrication of microstrip or pixel devices which do not suffer from the limitations normally found [1] in avalanche detectors. In addition, a moderate multiplication value will allow the fabrication of thinner devices with the same output signal of standard thick substrates. The investigation of these detectors provides important indications on the ability of such modified electrode geometry to control and optimize the charge multiplication effect, in order to fully recover the collection efficiency of heavily irradiated silicon detectors, at reasonable bias voltage, compatible with the voltage feed limitation of the CERN High Luminosity Large Hadron Collider (HL-LHC) experiments [2]. For instance, the inner most pixel detector layers of the ATLAS tracker will be exposed to fluences up to 2×10 16 1 MeV n eq /cm 2 , while for the inner strip detector region fluences of 1×10 15 n eq /cm 2 are expected. The gain implemented in the non-irradiated devices must retain some effect also after irradiation, with a higher multiplication factor with respect to standard structures, in order to be used in harsh environments such those expected at collider experiments

  18. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor.

    Science.gov (United States)

    Lee, Jieun; Jang, Jaeman; Choi, Bongsik; Yoon, Jinsu; Kim, Jee-Yeon; Choi, Yang-Kyu; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin

    2015-07-21

    This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5 × 10(5) times larger than that of a single SiNW sensor. In addition, we demonstrate charged polymer detection using the biosensor, with a high current change of 4.5 × 10(5) with a 500 nM concentration of poly(allylamine hydrochloride). In addition, we demonstrate a wide dynamic range can be obtained by adjusting the liquid gate voltage. We expect that this biosensor will be advantageous and practical for biosensor applications which requires lower noise, high speed, and high density.

  19. Avalanches in insulating gases

    International Nuclear Information System (INIS)

    Verhaart, H.F.A.

    1982-01-01

    Avalanches of charged particles in gases are often studied with the ''electrical method'', the measurement of the waveform of the current in the external circuit. In this thesis a substantial improvement of the time resolution of the measuring setup, to be used for the electrical method, is reported. The avalanche is started by an N 2 -laser with a pulse duration of only 0.6 ns. With this laser it is possible to release a high number of primary electrons (some 10 8 ) which makes it possible to obtain sizeable signals, even at low E/p values. With the setup it is possible to analyze current waveforms with a time resolution down to 1.4 ns, determined by both the laser and the measuring system. Furthermore it is possible to distinguish between the current caused by the electrons and the current caused by the ions in the avalanche and to monitor these currents simultaneously. Avalanche currents are measured in N 2 , CO 2 , O 2 , H 2 O, air of varying humidity, SF 6 and SF 6 /N 2 mixtures. Depending on the nature of the gas and the experimental conditions, processes as diffusion, ionization, attachment, detachment, conversion and secondary emission are observed. Values of parameters with which these processes can be described, are derived from an analysis of the current waveforms. For this analysis already published theories and new theories described in this thesis are used. The drift velocity of both the electrons and the ions could be easily determined from measured avalanche currents. Special attention is paid to avalanches in air becasue of the practical importance of air insulation. (Auth.)

  20. Hybrid vertical cavity laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide.......A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide....

  1. Radiation stable, hybrid, chemical vapor infiltration/preceramic polymer joining of silicon carbide components

    Energy Technology Data Exchange (ETDEWEB)

    Khalifa, Hesham E., E-mail: hesham.khalifa@ga.com [General Atomics, 3550 General Atomics Ct., San Diego 92121, CA (United States); Koyanagi, Takaaki [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge 37831, TN (United States); Jacobsen, George M.; Deck, Christian P.; Back, Christina A. [General Atomics, 3550 General Atomics Ct., San Diego 92121, CA (United States)

    2017-04-15

    This paper reports on a nuclear-grade joining material for bonding of silicon carbide-based components. The joint material is fabricated via a hybrid preceramic polymer, chemical vapor infiltration process. The joint is comprised entirely of β-SiC and results in excellent mechanical and permeability performance. The joint strength, composition, and microstructure have been characterized before and after irradiation to 4.5 dpa at 730 °C in the High Flux Isotope Reactor. The hybrid preceramic polymer-chemical vapor infiltrated joint exhibited complete retention of shear strength and no evidence of microstructural evolution or damage was detected following irradiation.

  2. Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection

    Directory of Open Access Journals (Sweden)

    André Darveau

    2007-09-01

    Full Text Available The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS. In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

  3. Study on control of defect mode in hybrid mirror chirped porous silicon photonic crystal

    Science.gov (United States)

    Chen, Ying; Luo, Pei; Han, Yangyang; Cui, Xingning; He, Lei

    2018-03-01

    Based on the optical resonance principle and the tight-binding theory, a hybrid mirror chirped porous silicon photonic crystal is proposed. The control of the defect mode in hybrid mirror chirped porous silicon photonic crystal is studied. Through the numerical simulation, the control regulations of the defect modes resulted by the number of the periodical layers for the fundamental unit and the cascading number of the chirped structures are analyzed, and the split and the degeneration of the defect modes resulted by the change of the relative location between the mirror structures and the quasi-mirror structures are discussed. The simulation results show that the band gap would be broadened with the increase of the chirp quantity and the layer number of unilateral chirp. Adjusting the structural parameters of the hybrid mirror structure, the multimode characteristics will occur in the band gap. The more the cascading number of the chirped units, the more the number of the filtering channels will be. In addition, with the increase of the relative location between the mirror structures and the quasi-mirror structures, the degeneration of the defect modes will occur and can obtain high Q value. The structure can provide effective theoretical references for the design the multi-channel filters and high Q value sensors.

  4. Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

    Science.gov (United States)

    Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2017-07-10

    We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

  5. Amorphous silicon radiation detectors

    Science.gov (United States)

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  6. Energy and dissipated work in snow avalanches

    Science.gov (United States)

    Bartelt, P.; Buser, O.

    2004-12-01

    Using the results of large scale avalanche experiments at the Swiss Vallée de la Sionne test site, the energy balance of several snow avalanches is determined. Avalanches convert approximately one-seventh of their potential energy into kinetic energy. The total potential energy depends strongly on the entrained snowcover, indicating that entrainment processes cannot be ignored when predicting terminal velocities and runout distances. We find energy dissipation rates on the order of 1 GW. Fluidization of the fracture slab can be identified in the experiments as an increase in dissipation rate, thereby explaining the initial and rapid acceleration of avalanches after release. Interestingly, the dissipation rates appear to be constant along the track, although large fluctuations in internal velocity exist. Thus, we can demonstrate within the context of non-equilibrium thermodynamics that -- in space -- granular snow avalanches are irreversible, dissipative systems that minimize entropy production because they appear to reach a steady-state non-equilibrium. A thermodynamic analysis reveals that fluctuations in velocity depend on the roughness of the flow surface and viscosity of the granular system. We speculate that this property explains the transition from flowing avalanches to powder avalanches.

  7. Silicon Photo-Multiplier Radiation Hardness Tests with a White Neutron Beam

    International Nuclear Information System (INIS)

    Montanari, A.; Tosi, N.; Pietropaolo, A.; Andreotti, M.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Luppi, E.; Cotta Ramusino, A.; Malaguti, R.; Santoro, V.; Tellarini, G.; Tomassetti, L.; De Donato, C.; Reali, E.

    2013-06-01

    We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron Linear Accelerator in Belgium on silicon Photo-Multipliers. These are semiconductor photon detectors made of a square matrix of Geiger-Mode Avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to about 6.2 x 10 9 1-MeV-equivalent neutrons per cm 2 . (authors)

  8. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  9. The design and investigation of hybrid ferromagnetic/silicon spin electronic devices

    International Nuclear Information System (INIS)

    Pugh, D.I.

    2001-01-01

    The focus of this study concerns the design and investigation of ferromagnetic/silicon hybrid spin electronic devices as part of a wider project to design a novel spin valve transistor. The key issue to obtain a room temperature spin electronic device is the electrical injection of a spin polarised current from a ferromagnetic contact into a semiconductor. Despite many attempts concentrating on GaAs and InAs only small (< 1%) effects have been observed, making it difficult to confirm spin injection. Lateral devices were designed and fabricated using standard device fabrication procedures to produce arrays of Co/Si/So junctions. Subsequent designs aimed to reduce the number of junctions and improve device isolation. Evidence for spin dependent MR of up to 0.56% was observed in Co/p-Si/Co junctions with silicon gaps up to 16 μm in length. The maximum MR was observed when the first Co/Si Schottky barrier was reverse biased forming a high resistance interface. Vertical devices were designed in an attempt to eliminate any alternative current paths by using a well defined, 1 μm thick silicon membrane. Despite attempts to include oxide barriers, no spin dependent MR was observed in these devices. However, a novel vertical silicon based design has been made which should facilitate further advanced studies of spin injection and transport. The spin diffusion length in n-type silicon has been calculated as a function of doping concentration and temperature by considering the spin relaxation mechanisms in the semiconductor. Discussion has been made concerning p-type silicon and comparisons made with GaAs, indicating that n-Si should show longer spin diffusion lengths. The key design criteria for designing room temperature spin electronic devices have been highlighted. These include the use of a high leakage Schottky barrier or tunnel barrier between the ferromagnet and p-Si and a contact to the silicon to enable appropriate biasing to each FM/Si interface. (author)

  10. Imaging findings of avalanche victims

    Energy Technology Data Exchange (ETDEWEB)

    Grosse, Alexandra B.; Grosse, Claudia A.; Anderson, Suzanne [University Hospital of Berne, Inselspital, Department of Diagnostic, Pediatric and Interventional Radiology, Berne (Switzerland); Steinbach, Lynne S. [University of California San Francisco, Department of Radiology, San Francisco, CA (United States); Zimmermann, Heinz [University Hospital of Berne, Inselspital, Department of Trauma and Emergency Medicine, Berne (Switzerland)

    2007-06-15

    Skiing and hiking outside the boundaries remains an attractive wilderness activity despite the danger of avalanches. Avalanches occur on a relatively frequent basis and may be devastating. Musculoskeletal radiologists should be acquainted with these injuries. Fourteen avalanche victims (11 men and 3 women; age range 17-59 years, mean age 37.4 years) were air transported to a high-grade trauma centre over a period of 2 years. Radiographs, CT and MR images were prospectively evaluated by two observers in consensus. Musculoskeletal findings (61%) were more frequent than extraskeletal findings (39%). Fractures were most commonly seen (36.6%), involving the spine (14.6%) more frequently than the extremities (9.8%). Blunt abdominal and thoracic trauma were the most frequent extraskeletal findings. A wide spectrum of injuries can be found in avalanche victims, ranging from extremity fractures to massive polytrauma. Asphyxia remains the main cause of death along with hypoxic brain injury and hypothermia. (orig.)

  11. Photothermal and biodegradable polyaniline/porous silicon hybrid nanocomposites as drug carriers for combined chemo-photothermal therapy of cancer.

    Science.gov (United States)

    Xia, Bing; Wang, Bin; Shi, Jisen; Zhang, Yu; Zhang, Qi; Chen, Zhenyu; Li, Jiachen

    2017-03-15

    To develop photothermal and biodegradable nanocarriers for combined chemo-photothermal therapy of cancer, polyaniline/porous silicon hybrid nanocomposites had been successfully fabricated via surface initiated polymerization of aniline onto porous silicon nanoparticles in our experiments. As-prepared polyaniline/porous silicon nanocomposites could be well dispersed in aqueous solution without any extra hydrophilic surface coatings, and showed a robust photothermal effect under near-infrared (NIR) laser irradiation. Especially, after an intravenous injection into mice, these biodegradable porous silicon-based nanocomposites as non-toxic agents could be completely cleared in body. Moreover, these polyaniline/porous silicon nanocomposites as drug carriers also exhibited an efficient loading and dual pH/NIR light-triggered release of doxorubicin hydrochloride (DOX, a model anticancer drug). Most importantly, assisted with NIR laser irradiation, polyaniline/PSiNPs nanocomposites with loading DOX showed a remarkable synergistic anticancer effect combining chemotherapy with photothermal therapy, whether in vitro or in vivo. Therefore, based on biodegradable PSiNPs-based nanocomposites, this combination approach of chemo-photothermal therapy would have enormous potential on clinical cancer treatments in the future. Considering the non-biodegradable nature and potential long-term toxicity concerns of photothermal nanoagents, it is of great interest and importance to develop biodegradable and photothermal nanoparticles with an excellent biocompatibility for their future clinical applications. In our experiments, we fabricated porous silicon-based hybrid nanocomposites via surface initiated polymerization of aniline, which showed an excellent photothermal effect, aqueous dispersibility, biodegradability and biocompatibility. Furthermore, after an efficient loading of DOX molecules, polyaniline/porous silicon nanocomposites exhibited the remarkable synergistic anticancer

  12. Measuring neuronal avalanches in disordered systems with absorbing states

    Science.gov (United States)

    Girardi-Schappo, M.; Tragtenberg, M. H. R.

    2018-04-01

    Power-law-shaped avalanche-size distributions are widely used to probe for critical behavior in many different systems, particularly in neural networks. The definition of avalanche is ambiguous. Usually, theoretical avalanches are defined as the activity between a stimulus and the relaxation to an inactive absorbing state. On the other hand, experimental neuronal avalanches are defined by the activity between consecutive silent states. We claim that the latter definition may be extended to some theoretical models to characterize their power-law avalanches and critical behavior. We study a system in which the separation of driving and relaxation time scales emerges from its structure. We apply both definitions of avalanche to our model. Both yield power-law-distributed avalanches that scale with system size in the critical point as expected. Nevertheless, we find restricted power-law-distributed avalanches outside of the critical region within the experimental procedure, which is not expected by the standard theoretical definition. We remark that these results are dependent on the model details.

  13. Spatial determination of magnetic avalanche ignition points

    International Nuclear Information System (INIS)

    Jaafar, Reem; McHugh, S.; Suzuki, Yoko; Sarachik, M.P.; Myasoedov, Y.; Zeldov, E.; Shtrikman, H.; Bagai, R.; Christou, G.

    2008-01-01

    Using time-resolved measurements of local magnetization in the molecular magnet Mn 12 -ac, we report studies of magnetic avalanches (fast magnetization reversals) with non-planar propagating fronts, where the curved nature of the magnetic fronts is reflected in the time-of-arrival at micro-Hall sensors placed at the surface of the sample. Assuming that the avalanche interface is a spherical bubble that grows with a radius proportional to time, we are able to locate the approximate ignition point of each avalanche in a two-dimensional cross-section of the crystal. We find that although in most samples the avalanches ignite at the long ends, as found in earlier studies, there are crystals in which ignition points are distributed throughout an entire weak region near the center, with a few avalanches still originating at the ends

  14. Spatial determination of magnetic avalanche ignition points

    Energy Technology Data Exchange (ETDEWEB)

    Jaafar, Reem; McHugh, S.; Suzuki, Yoko [Physics Department, City College of the City University of New York, New York, NY 10031 (United States); Sarachik, M.P. [Physics Department, City College of the City University of New York, New York, NY 10031 (United States)], E-mail: sarachik@sci.ccny.cuny.edu; Myasoedov, Y.; Zeldov, E.; Shtrikman, H. [Department Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100 (Israel); Bagai, R.; Christou, G. [Department of Chemistry, University of Florida, Gainesville, FL 32611 (United States)

    2008-03-15

    Using time-resolved measurements of local magnetization in the molecular magnet Mn{sub 12}-ac, we report studies of magnetic avalanches (fast magnetization reversals) with non-planar propagating fronts, where the curved nature of the magnetic fronts is reflected in the time-of-arrival at micro-Hall sensors placed at the surface of the sample. Assuming that the avalanche interface is a spherical bubble that grows with a radius proportional to time, we are able to locate the approximate ignition point of each avalanche in a two-dimensional cross-section of the crystal. We find that although in most samples the avalanches ignite at the long ends, as found in earlier studies, there are crystals in which ignition points are distributed throughout an entire weak region near the center, with a few avalanches still originating at the ends.

  15. Response of CMS avalanche photo-diodes to low energy neutrons

    Science.gov (United States)

    Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.

    2012-12-01

    The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.

  16. Real time avalanche detection for high risk areas.

    Science.gov (United States)

    2014-12-01

    Avalanches routinely occur on State Highway 21 (SH21) between Lowman and Stanley, Idaho each winter. The avalanches pose : a threat to the safety of maintenance workers and the traveling public. A real-time avalanche detection system will allow the :...

  17. Assessing the importance of terrain parameters on glide avalanche release

    Science.gov (United States)

    Peitzsch, E.; Hendrikx, J.; Fagre, D. B.

    2013-12-01

    Glide snow avalanches are dangerous and difficult to predict. Despite recent research there is still a lack of understanding regarding the controls of glide avalanche release. Glide avalanches often occur in similar terrain or the same locations annually and observations suggest that topography may be critical. Thus, to gain an understanding of the terrain component of these types of avalanches we examined terrain parameters associated with glide avalanche release as well as areas of consistent glide crack formation but no subsequent avalanches. Glide avalanche occurrences visible from the Going-to-the-Sun Road corridor in Glacier National Park, Montana from 2003-2013 were investigated using an avalanche database derived of daily observations each year from April 1 to June 15. This yielded 192 glide avalanches in 53 distinct avalanche paths. Each avalanche occurrence was digitized in a GIS using satellite, oblique, and aerial imagery as reference. Topographical parameters such as area, slope, aspect, elevation and elevation were then derived for the entire dataset utilizing GIS tools and a 10m DEM. Land surface substrate and surface geology were derived from National Park Service Inventory and Monitoring maps and U.S. Geological Survey surface geology maps, respectively. Surface roughness and glide factor were calculated using a four level classification index. . Then, each avalanche occurrence was aggregated to general avalanche release zones and the frequencies were compared. For this study, glide avalanches released in elevations ranging from 1300 to 2700 m with a mean aspect of 98 degrees (east) and a mean slope angle of 38 degrees. The mean profile curvature for all glide avalanches was 0.15 and a plan curvature of -0.01, suggesting a fairly linear surface (i.e. neither convex nor concave). The glide avalanches occurred in mostly bedrock made up of dolomite and limestone slabs and talus deposits with very few occurring in alpine meadows. However, not all glide

  18. Assessing the importance of terrain parameters on glide avalanche release

    Science.gov (United States)

    Peitzsch, Erich H.; Hendrikx, Jordy; Fagre, Daniel B.

    2014-01-01

    Glide snow avalanches are dangerous and difficult to predict. Despite recent research there is still a lack of understanding regarding the controls of glide avalanche release. Glide avalanches often occur in similar terrain or the same locations annually and observations suggest that topography may be critical. Thus, to gain an understanding of the terrain component of these types of avalanches we examined terrain parameters associated with glide avalanche release as well as areas of consistent glide crack formation but no subsequent avalanches. Glide avalanche occurrences visible from the Going-to-the-Sun Road corridor in Glacier National Park, Montana from 2003-2013 were investigated using an avalanche database derived of daily observations each year from April 1 to June 15. This yielded 192 glide avalanches in 53 distinct avalanche paths. Each avalanche occurrence was digitized in a GIS using satellite, oblique, and aerial imagery as reference. Topographical parameters such as area, slope, aspect, elevation and elevation were then derived for the entire dataset utilizing GIS tools and a 10m DEM. Land surface substrate and surface geology were derived from National Park Service Inventory and Monitoring maps and U.S. Geological Survey surface geology maps, respectively. Surface roughness and glide factor were calculated using a four level classification index. . Then, each avalanche occurrence was aggregated to general avalanche release zones and the frequencies were compared. For this study, glide avalanches released in elevations ranging from 1300 to 2700 m with a mean aspect of 98 degrees (east) and a mean slope angle of 38 degrees. The mean profile curvature for all glide avalanches was 0.15 and a plan curvature of -0.01, suggesting a fairly linear surface (i.e. neither convex nor concave). The glide avalanches occurred in mostly bedrock made up of dolomite and limestone slabs and talus deposits with very few occurring in alpine meadows. However, not all glide

  19. Sensors for ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

    2014-11-21

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

  20. Sensors for ultra-fast silicon detectors

    International Nuclear Information System (INIS)

    Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

    2014-01-01

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

  1. Study on Production of Silicon Nanoparticles from Quartz Sand for Hybrid Solar Cell Applications

    Science.gov (United States)

    Arunmetha, S.; Vinoth, M.; Srither, S. R.; Karthik, A.; Sridharpanday, M.; Suriyaprabha, R.; Manivasakan, P.; Rajendran, V.

    2018-01-01

    Nano silicon (nano Si) particles were directly prepared from natural mineral quartz sand and thereafter used to fabricate the hybrid silicon solar cells. Here, in this preparation technique, two process stages were involved. In the first stage, the alkaline extraction and acid precipitation processes were applied on quartz sand to fetch silica nanoparticles. In the second stage, magnesiothermic and modified magnesiothermic reduction reactions were applied on nano silica particles to prepare nano Si particles. The effect of two distinct reduction methodologies on nano Si particle preparation was compared. The magnesiothermic and modified magnesiothermic reductions in the silica to silicon conversion process were studied with the help of x-ray diffraction (XRD) with intent to study the phase changes during the reduction reaction as well as its crystalline nature in the pure silicon phase. The particles consist of a combination of fine particles with spherical morphology. In addition to this, the optical study indicated an increase in visible light absorption and also increases the performance of the solar cell. The obtained nano Si particles were used as an active layer to fabricate the hybrid solar cells (HSCs). The obtained results confirmed that the power conversion efficiency (PCE) of the magnesiothermically modified nano Si cells (1.06%) is much higher as compared to the nano Si cells that underwent magnesiothermic reduction (1.02%). Thus, this confirms the increased PCE of the investigated nano Si solar cell up to 1.06%. It also revealed that nano Si behaved as an electron acceptor and transport material. The present study provided valuable insights and direction for the preparation of nano Si particles from quartz sand, including the influence of process methods. The prepared nano Si particles can be utilized for HSCs and an array of portable electronic devices.

  2. SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector.

    Science.gov (United States)

    Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

    2014-01-13

    We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.

  3. Improved SPICE electrical model of silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Marano, D., E-mail: davide.marano@oact.inaf.it [INAF, Osservatorio Astrofisico di Catania, Via S. Sofia 78, I-95123 Catania (Italy); Bonanno, G.; Belluso, M.; Billotta, S.; Grillo, A.; Garozzo, S.; Romeo, G. [INAF, Osservatorio Astrofisico di Catania, Via S. Sofia 78, I-95123 Catania (Italy); Catalano, O.; La Rosa, G.; Sottile, G.; Impiombato, D.; Giarrusso, S. [INAF, Istituto di Astrofisica Spaziale e Fisica Cosmica di Palermo, Via U. La Malfa 153, I-90146 Palermo (Italy)

    2013-10-21

    The present work introduces an improved SPICE equivalent electrical model of silicon photomultiplier (SiPM) detectors, in order to simulate and predict their transient response to avalanche triggering events. In particular, the developed circuit model provides a careful investigation of the magnitude and timing of the read-out signals and can therefore be exploited to perform reliable circuit-level simulations. The adopted modeling approach is strictly related to the physics of each basic microcell constituting the SiPM device, and allows the avalanche timing as well as the photodiode current and voltage to be accurately simulated. Predictive capabilities of the proposed model are demonstrated by means of experimental measurements on a real SiPM detector. Simulated and measured pulses are found to be in good agreement with the expected results. -- Highlights: • An improved SPICE electrical model of silicon photomultipliers is proposed. • The developed model provides a truthful representation of the physics of the device. • An accurate charge collection as a function of the overvoltage is achieved. • The adopted electrical model allows reliable circuit-level simulations to be performed. • Predictive capabilities of the adopted model are experimentally demonstrated.

  4. Porous silicon-VO{sub 2} based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

    Energy Technology Data Exchange (ETDEWEB)

    Antunez, E. E.; Salazar-Kuri, U.; Estevez, J. O.; Basurto, M. A.; Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, Instituto de Investigación en Ciencias Básicas y Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Mor. 62209 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Mor. 62580 (Mexico); Jiménez Sandoval, S. [Laboratorio de Investigación en Materiales, Centro de Investigación y estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, Qro. 76001 (Mexico)

    2015-10-07

    Morphological properties of thermochromic VO{sub 2}—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO{sub 2} as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO{sub 2}(M) to a high-temperature tetragonal rutile VO{sub 2}(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching with temperature. As compared to VO{sub 2} film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology.

  5. [Effects of exogenous silicon on the pollination and fertility characteristics of hybrid rice under heat stress during anthesis].

    Science.gov (United States)

    Wu, Chen-Yang; Chen, Dan; Luo, Hai-Wei; Yao, Yi-min; Wang, Zhi-Wei; Tsutomu, Matsui; Tian, Xiao-Hai

    2013-11-01

    Taking two medium-maturing indica rice hybrids Jinyou 63 and Shanyou 63 as test materials, this paper studied the effects of applying silicon fertilizer on the flag leaf chlorophyll content, photosynthetic properties, antioxidant enzyme activities, malondialdehyde (MDA) content, pollen vigor, anther acid invertase activity, pollination, and seed-setting of hybrid rice under the heat stress during anthesis. This study was conducted in pots and under growth chamber. Soluble solution of silicon fertilizer applied as Na2SiO3 x 9H2O was sprayed on the growing plants after early jointing stage, with three times successively and at an interval of one week. The pots were then moved into growth chamber to subject to normal temperature vs. high temperature (termed as heat stress) for five days. In treatment normal temperature, the average daily temperature was set at 26.6 degrees C, and the maximum daily temperature was set at 29.4 degres C; in treatment high temperature, the average and the maximum daily temperature were set at 33.2 degrees C and 40.1 degrees C, respectively. As compared with the control, applying silicon increased the flag leaf chlorophyll content significantly, improved the net photosynthetic rate and stomatal conductance, decreased the accumulative inter- cellular CO2 concentration, improved the leaf photosynthesis, reduced the MDA content, and improved the activities of SOD, POD and CAT under heat stress. In addition, applying silicon improved the anther acid invertase activity and the pollen vigor, increased the anther basal dehiscence width, total number of pollination per stigma, germinated number, germination rate of pollen, and percentage of florets with more than 10 germinated pollen grains, decreased the percentage of florets with fewer than 20 germinated pollen grains, and thus, alleviated the fertility loss of Jinyou 63 and Shanyou 63 under heat stress by 13.4% and 14.1%, respectively. It was suggested that spraying exogenous silicon in the

  6. Hybrid Detectors for Neutrons Combining Phenyl- Polysiloxanes with 3D Silicon Detectors

    International Nuclear Information System (INIS)

    Dalla Palma, Matteo; Quaranta, Alberto; Collazuol, Gianmaria; Carturan, Sara; Cinausero, Marco; Gramegna, Fabiana; Marchi, Tommaso; Dalla Betta, Gian-Franco; Mendicino, Roberto; Povoli, Marco; Boscardin, Maurizio; Giacomini, Gabriele; Ronchin, Sabina; Zorzi, Nicola

    2013-06-01

    We report on the initial results of a research project aimed at the development hybrid detectors for fast neutrons by combining a phenyl-polysiloxane-based converter with a 3D silicon detector. To this purpose, new 3D sensor structures have been designed, fabricated and electrically tested, showing low depletion voltage and good leakage current. Moreover, the radiation detection capability of 3D sensors was tested by measuring the signals recorded from alpha particles, gamma rays, and pulsed lasers. The converter has been poured into the 3D cavities with excellent coupling, as confirmed by cross-section SEM analyses. Preliminary tests with neutrons have been carried out on the first hybrid detector prototypes at the CN accelerator of INFN LNL. The device design and technology are discussed, along with the first results from the electrical and functional characterization. (authors)

  7. Rock-avalanche dynamics revealed by large-scale field mapping and seismic signals at a highly mobile avalanche in the West Salt Creek valley, western Colorado

    Science.gov (United States)

    Coe, Jeffrey A.; Baum, Rex L.; Allstadt, Kate E.; Kochevar, Bernard; Schmitt, Robert G.; Morgan, Matthew L.; White, Jonathan L.; Stratton, Benjamin T.; Hayashi, Timothy A.; Kean, Jason W.

    2016-01-01

    On 25 May 2014, a rain-on-snow–induced rock avalanche occurred in the West Salt Creek valley on the northern flank of Grand Mesa in western Colorado (United States). The avalanche mobilized from a preexisting rock slide in the Green River Formation and traveled 4.6 km down the confined valley, killing three people. The avalanche was rare for the contiguous United States because of its large size (54.5 Mm3) and high mobility (height/length = 0.14). To understand the avalanche failure sequence, mechanisms, and mobility, we conducted a forensic analysis using large-scale (1:1000) structural mapping and seismic data. We used high-resolution, unmanned aircraft system imagery as a base for field mapping, and analyzed seismic data from 22 broadband stations (distances earth and tracked these forces using curves in the avalanche path. Our results revealed that the rock avalanche was a cascade of landslide events, rather than a single massive failure. The sequence began with an early morning landslide/debris flow that started ∼10 h before the main avalanche. The main avalanche lasted ∼3.5 min and traveled at average velocities ranging from 15 to 36 m/s. For at least two hours after the avalanche ceased movement, a central, hummock-rich core continued to move slowly. Since 25 May 2014, numerous shallow landslides, rock slides, and rock falls have created new structures and modified avalanche topography. Mobility of the main avalanche and central core was likely enhanced by valley floor material that liquefied from undrained loading by the overriding avalanche. Although the base was likely at least partially liquefied, our mapping indicates that the overriding avalanche internally deformed predominantly by sliding along discrete shear surfaces in material that was nearly dry and had substantial frictional strength. These results indicate that the West Salt Creek avalanche, and probably other long-traveled avalanches, could be modeled as two layers: a thin, liquefied

  8. An ion beam tracking system based on a parallel plate avalanche counter

    International Nuclear Information System (INIS)

    Carter, I. P.; Ramachandran, K.; Dasgupta, M.; Hinde, D. J.; Rafiei, R.; Luong, D. H.; Williams, E.; Cook, K. J.; McNeil, S.; Rafferty, D. C.; Harding, A. B.; Muirhead, A. G.; Tunningley, T.

    2013-01-01

    A pair of twin position-sensitive parallel plate avalanche counters have been developed at the Australian National University as a tracking system to aid in the further rejection of unwanted beam particles from a 6.5 T super conducting solenoid separator named SOLEROO. Their function is to track and identify each beam particle passing through the detectors on an event-by-event basis. In-beam studies have been completed and the detectors are in successful operation, demonstrating the tracking capability. A high efficiency 512-pixel wide-angle silicon detector array will then be integrated with the tracking system for nuclear reactions studies of radioactive ions. (authors)

  9. Characterizing the nature and variability of avalanche hazard in western Canada

    Science.gov (United States)

    Shandro, Bret; Haegeli, Pascal

    2018-04-01

    The snow and avalanche climate types maritime, continental and transitional are well established and have been used extensively to characterize the general nature of avalanche hazard at a location, study inter-seasonal and large-scale spatial variabilities and provide context for the design of avalanche safety operations. While researchers and practitioners have an experience-based understanding of the avalanche hazard associated with the three climate types, no studies have described the hazard character of an avalanche climate in detail. Since the 2009/2010 winter, the consistent use of Statham et al. (2017) conceptual model of avalanche hazard in public avalanche bulletins in Canada has created a new quantitative record of avalanche hazard that offers novel opportunities for addressing this knowledge gap. We identified typical daily avalanche hazard situations using self-organizing maps (SOMs) and then calculated seasonal prevalence values of these situations. This approach produces a concise characterization that is conducive to statistical analyses, but still provides a comprehensive picture that is informative for avalanche risk management due to its link to avalanche problem types. Hazard situation prevalence values for individual seasons, elevations bands and forecast regions provide unprecedented insight into the inter-seasonal and spatial variability of avalanche hazard in western Canada.

  10. Memory effect in gated single-photon avalanche diodes: a limiting noise contribution similar to afterpulsing

    Science.gov (United States)

    Contini, D.; Dalla Mora, A.; Di Sieno, L.; Cubeddu, R.; Tosi, A.; Boso, G.; Pifferi, A.

    2013-03-01

    In recent years, emerging applications, such as diffuse optical imaging and spectroscopy (e.g., functional brain imaging and optical mammography), in which a wide dynamic range is crucial, have turned the interest towards Single-Photon Avalanche Diode (SPAD). In these fields, the use of a fast-gated SPAD has proven to be a successful technique to increase the measurement sensitivity of different orders of magnitude. However, an unknown background noise has been observed at high illumination during the gate-OFF time, thus setting a limit to the maximum increase of the dynamic range. In this paper we describe this noise in thin-junction silicon single-photon avalanche diode when a large amount of photons reaches the gated detector during the OFF time preceding the enabling time. This memory effect increases the background noise with respect to primary dark count rate similarly to a classical afterpulsing process, but differently it is not related to a previous avalanche ignition in the detector. We discovered that memory effect increases linearly with the power of light impinging on the detector and it has an exponential trend with time constants far different from those of afterpulsing and independently of the bias voltage applied to the junction. For these reasons, the memory effect is not due to the same trapping states of afterpulsing and must be described as a different process.

  11. Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application

    International Nuclear Information System (INIS)

    Chehata, Nadia; Ltaief, Adnen; Ilahi, Bouraoui; Salem, Bassem; Bouazizi, Abdelaziz; Maaref, Hassen; Baron, Thierry

    2014-01-01

    Hybrid nanocomposites based on a nanoscale combination of organic and inorganic semiconductors are a promising way to enhance the performance of solar cells through a higher aspect ratio of the interface and the good processability of polymers. Nanocomposites are based on a heterojunction network between poly (2-methoxy-5-(2-ethyhexyl-oxy)-p-phenylenevinylene) (MEH-PPV) as an organic electron donor and silicon nanowires (SiNWs) as an inorganic electron acceptor. Nanowires (NWs) seem to be a promising material for this purpose, as they provide a large surface area for contact with the polymer and a designated conducting pathway whilst their volume is low. In this paper, silicon nanowires are introduced by mixing them into the polymer matrix. Hybrid nanocomposites films were deposited onto ITO substrate by spin coating method. Optical properties and photocurrent response were investigated. Charge transfer between the polymer and SiNWs has been demonstrated through photoluminescence measurements. The photocurrent density of ITO/MEH-PPV:SiNWs/Al structures have been obtained by J–V characteristics. The J sc value is about 0.39 µA/cm 2 . - Highlights: • SiNWs synthesis by Vapor–Liquid–Solid (VLS) mechanism. • SiNWs contribution to absorption spectra enhancement of MEH-PPV:SiNWs nanocomposites. • Decrease of PL intensity of MEH-PPV by addition of SiNWs. • Charge transfer process was taken place. • ITO/MEH-PPV:SiNWs/Al structure shows a photovoltaic effect, with a FF of 0.32

  12. Criticality and avalanches in neural networks

    International Nuclear Information System (INIS)

    Zare, Marzieh; Grigolini, Paolo

    2013-01-01

    Highlights: • Temporal criticality is used as criticality indicator. • The Mittag–Leffler function is proposed as a proper form of temporal complexity. • The distribution of avalanche size becomes scale free in the supercritical state. • The scale-free distribution of avalanche sizes is an epileptic manifestation. -- Abstract: Experimental work, both in vitro and in vivo, reveals the occurrence of neural avalanches with an inverse power law distribution in size and time duration. These properties are interpreted as an evident manifestation of criticality, thereby suggesting that the brain is an operating near criticality complex system: an attractive theoretical perspective that according to Gerhard Werner may help to shed light on the origin of consciousness. However, a recent experimental observation shows no clear evidence for power-law scaling in awake and sleeping brain of mammals, casting doubts on the assumption that the brain works at criticality. This article rests on a model proposed by our group in earlier publications to generate neural avalanches with the time duration and size distribution matching the experimental results on neural networks. We now refine the analysis of the time distance between consecutive firing bursts and observe the deviation of the corresponding distribution from the Poisson statistics, as the system moves from the non-cooperative to the cooperative regime. In other words, we make the assumption that the genuine signature of criticality may emerge from temporal complexity rather than from the size and time duration of avalanches. We argue that the Mittag–Leffler (ML) exponential function is a satisfactory indicator of temporal complexity, namely of the occurrence of non-Poisson and renewal events. The assumption that the onset of criticality corresponds to the birth of renewal non-Poisson events establishes a neat distinction between the ML function and the power law avalanches generating regime. We find that

  13. Ultracompact on-chip photothermal power monitor based on silicon hybrid plasmonic waveguides

    Directory of Open Access Journals (Sweden)

    Wu Hao

    2017-01-01

    Full Text Available We propose and demonstrate an ultracompact on-chip photothermal power monitor based on a silicon hybrid plasmonic waveguide (HPWG, which consists of a metal strip, a silicon core, and a silicon oxide (SiO2 insulator layer between them. When light injected to an HPWG is absorbed by the metal strip, the temperature increases and the resistance of the metal strip changes accordingly due to the photothermal and thermal resistance effects of the metal. Therefore, the optical power variation can be monitored by measuring the resistance of the metal strip on the HPWG. To obtain the electrical signal for the resistance measurement conveniently, a Wheatstone bridge circuit is monolithically integrated with the HPWG on the same chip. As the HPWG has nanoscale light confinement, the present power monitor is as short as ~3 μm, which is the smallest photothermal power monitor reported until now. The compactness helps to improve the thermal efficiency and the response speed. For the present power monitor fabricated with simple fabrication processes, the measured responsivity is as high as about 17.7 mV/mW at a bias voltage of 2 V and the power dynamic range is as large as 35 dB.

  14. Radiation Detection Measurements with a New 'Buried Junction' Silicon Avalanche Photodiode

    CERN Document Server

    Lecomte, R; Rouleau, D; Dautet, H; McIntyre, R J; McSween, D; Webb, P

    1999-01-01

    An improved version of a recently developed 'Buried Junction' avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the 'Reverse APD', is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of ener...

  15. Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Y.; Yun, Y. B. [Yonsei University, Seoul (Korea, Republic of); Ha, J. M. [Yonsei University, Seoul (Korea, Republic of); Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Lee, J. S.; Yoon, Y. S. [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Eun, J. W. [Namseoul University, Cheonan (Korea, Republic of)

    2012-05-15

    A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

  16. Adiabatic Nanofocusing in Hybrid Gap Plasmon Waveguides on the Silicon-on-Insulator Platform.

    Science.gov (United States)

    Nielsen, Michael P; Lafone, Lucas; Rakovich, Aliaksandra; Sidiropoulos, Themistoklis P H; Rahmani, Mohsen; Maier, Stefan A; Oulton, Rupert F

    2016-02-10

    We present an experimental demonstration of a new class of hybrid gap plasmon waveguides on the silicon-on-insulator (SOI) platform. Created by the hybridization of the plasmonic mode of a gap in a thin metal sheet and the transverse-electric (TE) photonic mode of an SOI slab, this waveguide is designed for efficient adiabatic nanofocusing simply by varying the gap width. For gap widths greater than 100 nm, the mode is primarily photonic in character and propagation lengths can be many tens of micrometers. For gap widths below 100 nm, the mode becomes plasmonic in character with field confinement predominantly within the gap region and with propagation lengths of a few microns. We estimate the electric field intensity enhancement in hybrid gap plasmon waveguide tapers at 1550 nm by three-photon absorption of selectively deposited CdSe/ZnS quantum dots within the gap. Here, we show electric field intensity enhancements of up to 167 ± 26 for a 24 nm gap, proving the viability of low loss adiabatic nanofocusing on a commercially relevant photonics platform.

  17. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    International Nuclear Information System (INIS)

    Alemi, M.; Campbell, M.; Gys, T.; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K.

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface

  18. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    Energy Technology Data Exchange (ETDEWEB)

    Alemi, M.; Campbell, M.; Gys, T. E-mail: thierry.gys@cern.ch; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K

    2000-07-11

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface.

  19. Rectangular-cladding silicon slot waveguide with improved nonlinear performance

    Science.gov (United States)

    Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

    2018-04-01

    Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

  20. Avalanche photoconductive switching

    Science.gov (United States)

    Pocha, M. D.; Druce, R. L.; Wilson, M. J.; Hofer, W. W.

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV to 35 kV and rise times of 300 to 500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10(exp 3) to over 10(exp 5). Switches with two very different physical configurations and with two different illumination wavelengths (1.06 micrometer, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation.

  1. Avalanche photoconductive switching

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L.; Wilson, M.J.; Hofer, W.W.

    1989-01-01

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV--35 kV and rise times of 300--500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10{sup 3} to over 10{sup 5}. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 {mu}m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation. 3 refs., 6 figs.

  2. First approximations in avalanche model validations using seismic information

    Science.gov (United States)

    Roig Lafon, Pere; Suriñach, Emma; Bartelt, Perry; Pérez-Guillén, Cristina; Tapia, Mar; Sovilla, Betty

    2017-04-01

    Avalanche dynamics modelling is an essential tool for snow hazard management. Scenario based numerical modelling provides quantitative arguments for decision-making. The software tool RAMMS (WSL Institute for Snow and Avalanche Research SLF) is one such tool, often used by government authorities and geotechnical offices. As avalanche models improve, the quality of the numerical results will depend increasingly on user experience on the specification of input (e.g. release and entrainment volumes, secondary releases, snow temperature and quality). New model developments must continue to be validated using real phenomena data, for improving performance and reliability. The avalanches group form University of Barcelona (RISKNAT - UB), has studied the seismic signals generated from avalanches since 1994. Presently, the group manages the seismic installation at SLF's Vallée de la Sionne experimental site (VDLS). At VDLS the recorded seismic signals can be correlated to other avalanche measurement techniques, including both advanced remote sensing methods (radars, videogrammetry) and obstacle based sensors (pressure, capacitance, optical sender-reflector barriers). This comparison between different measurement techniques allows the group to address the question if seismic analysis can be used alone, on more additional avalanche tracks, to gain insight and validate numerical avalanche dynamics models in different terrain conditions. In this study, we aim to add the seismic data as an external record of the phenomena, able to validate RAMMS models. The seismic sensors are considerable easy and cheaper to install than other physical measuring tools, and are able to record data from the phenomena in every atmospheric conditions (e.g. bad weather, low light, freezing make photography, and other kind of sensors not usable). With seismic signals, we record the temporal evolution of the inner and denser parts of the avalanche. We are able to recognize the approximate position

  3. Anthropogenic effect on avalanche and debris flow activity

    OpenAIRE

    S. A. Sokratov; Yu. G. Seliverstov; A. L. Shnyparkov; K. P. Koltermann

    2013-01-01

    The paper presents examples of the change in snow avalanches and debris flows activity due to the anthropogenic pressure on vegetation and relief. The changes in dynamical characteristics of selected snow avalanches and debris flows due to the anthropogenic activity are quantified. The conclusion is made that the anthropogenic effects on the snow avalanches and debris flows activity are more pronounced than the possible effects of the climate change. The necessity is expressed on the unavoida...

  4. Statistics of Electron Avalanches and Streamers

    Directory of Open Access Journals (Sweden)

    T. Ficker

    2007-01-01

    Full Text Available We have studied the severe systematic deviations of populations of electron avalanches from the Furry distribution, which has been held to be the statistical law corresponding to them, and a possible explanation has been sought. A  new theoretical concept based on fractal avalanche multiplication has been proposed and is shown to be a convenient candidate for explaining these deviations from Furry statistics. 

  5. An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

    International Nuclear Information System (INIS)

    Tang Yin; Cai Qing; Chen Dun-Jun; Lu Hai; Zhang Rong; Zheng You-Dou; Yang Lian-Hong; Dong Ke-Xiu

    2017-01-01

    To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al 0.3 Ga 0.7 N/Al 0.45 Ga 0.55 N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al 0.3 Ga 0.7 N which has about a six times higher hole ionization coefficient than the high-Al-content Al 0.45 Ga 0.55 N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device. (paper)

  6. Transient events in bright debris discs: Collisional avalanches revisited

    Science.gov (United States)

    Thebault, P.; Kral, Q.

    2018-01-01

    Context. A collisional avalanche is set off by the breakup of a large planetesimal, releasing vast amounts of small unbound grains that enter a debris disc located further away from the star, triggering there a collisional chain reaction that could potentially create detectable transient structures. Aims: We investigate this mechanism, using for the first time a fully self-consistent code coupling dynamical and collisional evolutions. We also quantify for the first time the photometric evolution of the system and investigate whether or not avalanches could explain the short-term luminosity variations recently observed in some extremely bright debris discs. Methods: We use the state-of-the-art LIDT-DD code. We consider an avalanche-favoring A6V star, and two set-ups: a "cold disc" case, with a dust release at 10 au and an outer disc extending from 50 to 120 au, and a "warm disc" case with the release at 1 au and a 5-12 au outer disc. We explore, in addition, two key parameters: the density (parameterized by its optical depth τ) of the main outer disc and the amount of dust released by the initial breakup. Results: We find that avalanches could leave detectable structures on resolved images, for both "cold" and "warm" disc cases, in discs with τ of a few 10-3, provided that large dust masses (≳1020-5 × 1022 g) are initially released. The integrated photometric excess due to an avalanche is relatively limited, less than 10% for these released dust masses, peaking in the λ 10-20 μm domain and becoming insignificant beyond 40-50 μm. Contrary to earlier studies, we do not obtain stronger avalanches when increasing τ to higher values. Likewise, we do not observe a significant luminosity deficit, as compared to the pre-avalanche level, after the passage of the avalanche. These two results concur to make avalanches an unlikely explanation for the sharp luminosity drops observed in some extremely bright debris discs. The ideal configuration for observing an

  7. VV and VO2 defects in silicon studied with hybrid density functional theory

    KAUST Repository

    Christopoulos, Stavros Richard G

    2014-12-07

    The formation of VO (A-center), VV and VO2 defects in irradiated Czochralski-grown silicon (Si) is of technological importance. Recent theoretical studies have examined the formation and charge states of the A-center in detail. Here we use density functional theory employing hybrid functionals to analyze the formation of VV and VO2 defects. The formation energy as a function of the Fermi energy is calculated for all possible charge states. For the VV and VO2 defects double negatively charged and neutral states dominate, respectively.

  8. G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

    KAUST Repository

    Wang, H.

    2014-05-13

    Electronic structure calculations employing screened hybrid density functional theory are used to gain fundamental insight into the interaction of carbon interstitial (Ci) and substitutional (Cs) atoms forming the CiCs defect known as G-center in silicon (Si). The G-center is one of the most important radiation related defects in Czochralski grown Si. We systematically investigate the density of states and formation energy for different types of CiCs defects with respect to the Fermi energy for all possible charge states. Prevalence of the neutral state for the C-type defect is established.

  9. Snow Avalanche Disturbance Ecology: Examples From the San Juan Mountains, Colorado.

    Science.gov (United States)

    Simonson, S.; Fassnacht, S. R.

    2008-12-01

    We evaluated landscape ecology approaches to characterize snow avalanche paths based on patterns of plant species composition and evidence of disturbance. Historical records of avalanche incidents, patterns in the annual growth layers of woody plants, and distributions of plant species can be used to quantify and map the frequency and magnitude of snow slide events. Near Silverton, Colorado, a series of snow storms in January of 2005 resulted in many avalanche paths running full track at 30 and 100 year return frequency. Many avalanches cut fresh trimlines, widening their tracks by uprooting, stripping, and breaking mature trees. Powerful avalanches deposited massive piles of snow, rocks, and woody debris in their runout zones. We used cross-section discs and cores of representative downed trees to detect dendro-ecological signals of past snow avalanche disturbance. Avalanche signals included impact scars from the moving snow and associated wind blast, relative width of annual growth rings, and development of reaction wood in response to tilting. Initial measurements of plant diversity and disturbance along the elevation gradient of an avalanche path near Silverton indicate that avalanche activity influences patterns of forest cover, contributes to the high local plant species diversity, and provides opportunities for new seedling establishment.

  10. SNOW AVALANCHE ACTIVITY IN PARÂNG SKI AREA REVEALED BY TREE-RINGS

    Directory of Open Access Journals (Sweden)

    F. MESEȘAN

    2014-11-01

    Full Text Available Snow Avalanche Activity in Parâng Ski Area Revealed by Tree-Rings. Snow avalanches hold favorable conditions to manifest in Parâng Mountains but only one event is historically known, without destructive impact upon infrastructure or fatalities and this region wasn’t yet the object of avalanche research. The existing ski infrastructure of Parâng resort located in the west of Parâng Mountains is proposed to be extended in the steep slopes of subalpine area. Field evidence pinpoints that these steep slopes were affected by snow avalanches in the past. In this study we analyzed 11 stem discs and 31 increment cores extracted from 22 spruces (Picea abies (L. Karst impacted by avalanches, in order to obtain more information about past avalanches activity. Using the dendrogeomorphological approach we found 13 avalanche events that occurred along Scărița avalanche path, since 1935 until 2012, nine of them produced in the last 20 years. The tree-rings data inferred an intense snow avalanche activity along this avalanche path. This study not only calls for more research in the study area but also proves that snow avalanches could constitute an important restrictive factor for the tourism infrastructure and related activities in the area. It must be taken into consideration by the future extension of tourism infrastructure. Keywords: snow avalanche, Parâng Mountains, dendrogeomorphology, ski area.

  11. Relating rock avalanche morphology to emplacement processes

    Science.gov (United States)

    Dufresne, Anja; Prager, Christoph; Bösmeier, Annette

    2015-04-01

    The morphology, structure and sedimentological characteristics of rock avalanche deposits reflect both internal emplacement processes and external influences, such as runout path characteristics. The latter is mainly predisposed by topography, substrate types, and hydrogeological conditions. Additionally, the geological setting at the source slope controls, e.g. the spatial distribution of accumulated lithologies and hence material property-related changes in morphology, or the maximum clast size and amount of fines of different lithological units. The Holocene Tschirgant rock avalanche (Tyrol, Austria) resulted from failure of an intensely deformed carbonate rock mass on the southeast face of a 2,370-m-high mountain ridge. The initially sliding rock mass rapidly fragmented as it moved towards the floor of the Inn River valley. Part of the 200-250 x 106 m3 (Patzelt 2012) rock avalanche debris collided with and moved around an opposing bedrock ridge and flowed into the Ötz valley, reaching up to 6.3 km from source. Where the Tschirgant rock avalanche spread freely it formed longitudinal ridges aligned along motion direction as well as smaller hummocks. Encountering high topography, it left runup ridges, fallback patterns (i.e. secondary collapse), and compressional morphology (successively elevated, transverse ridges). Further evidence for the mechanical landslide behaviour is given by large volumes of mobilized valley-fill sediments (polymict gravels and sands). These sediments indicate both shearing and compressional faulting within the rock avalanche mass (forming their own morphological units through, e.g. in situ bulldozing or as distinctly different hummocky terrain), but also indicate extension of the spreading landslide mass (i.e. intercalated/injected gravels encountered mainly in morphological depressions between hummocks). Further influences on its morphology are given by the different lithological units. E.g. the transition from massive dolomite

  12. Investigations of single-electron avalanches in a proportional drift tube

    International Nuclear Information System (INIS)

    Anderson, W.S.; Armitage, J.C.; Chevreau, P.; Heinrich, J.G.; Lu, C.; McDonald, I.; McDonald, K.T.; Miller, B.; Secrest, D.; Weckel, J.

    1990-01-01

    Detailed information on single-electron drift and avalanche behavior has a basic interest in an investigation of gas-chamber performance. Its timing, avalanche distribution, attachment by the working gas mixtures, etc., provide various criteria for choosing the best suitable gas mixture under a specific experimental circumstance. Investigations of single-electron avalanches in a proportional drift tube have been carried out with a pulsed N 2 laser. The study consists of two aspects: timing properties, and fluctuations in the gas avalanche

  13. Resonant silicon nanoparticles for enhancement of light absorption and photoluminescence from hybrid perovskite films and metasurfaces.

    Science.gov (United States)

    Tiguntseva, E; Chebykin, A; Ishteev, A; Haroldson, R; Balachandran, B; Ushakova, E; Komissarenko, F; Wang, H; Milichko, V; Tsypkin, A; Zuev, D; Hu, W; Makarov, S; Zakhidov, A

    2017-08-31

    Recently, hybrid halide perovskites have emerged as one of the most promising types of materials for thin-film photovoltaic and light-emitting devices because of their low-cost and potential for high efficiency. Further boosting their performance without detrimentally increasing the complexity of the architecture is critically important for commercialization. Despite a number of plasmonic nanoparticle based designs having been proposed for solar cell improvement, inherent optical losses of the nanoparticles reduce photoluminescence from perovskites. Here we use low-loss high-refractive-index dielectric (silicon) nanoparticles for improving the optical properties of organo-metallic perovskite (MAPbI 3 ) films and metasurfaces to achieve strong enhancement of photoluminescence as well as useful light absorption. As a result, we observed experimentally a 50% enhancement of photoluminescence intensity from a perovskite layer with silicon nanoparticles and 200% enhancement for a nanoimprinted metasurface with silicon nanoparticles on top. Strong increase in light absorption is also demonstrated and described by theoretical calculations. Since both silicon nanoparticle fabrication/deposition and metasurface nanoimprinting techniques are low-cost, we believe that the developed all-dielectric approach paves the way to novel scalable and highly effective designs of perovskite based metadevices.

  14. Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source

    International Nuclear Information System (INIS)

    Angelone, M.; Pillon, M.; Faccini, R.; Pinci, D.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Cotta Ramusino, A.; Malaguti, R.; Pozzati, M.

    2010-01-01

    Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7x10 10 1-MeV-equivalent neutrons per cm 2 . Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 10 8 1-MeV-equivalent neutrons per cm 2 was reached.

  15. Terrain Classification of Norwegian Slab Avalanche Accidents

    Science.gov (United States)

    Hallandvik, Linda; Aadland, Eivind; Vikene, Odd Lennart

    2016-01-01

    It is difficult to rely on snow conditions, weather, and human factors when making judgments about avalanche risk because these variables are dynamic and complex; terrain, however, is more easily observed and interpreted. Therefore, this study aimed to investigate (1) the type of terrain in which historical fatal snow avalanche accidents in Norway…

  16. Numerical simulation of evolution of electron-hole avalanches and streamers in silicon in a uniform electric field

    International Nuclear Information System (INIS)

    Kyuregyan, A. S.

    2010-01-01

    Numerical simulation of origination and evolution of streamers in Si is performed for the first time. It is assumed that an external electric field E 0 is constant and uniform, the avalanche and streamer are axially symmetric, and background electrons and holes are absent. The calculations have been performed in the context of the diffusion-drift approximation with impact and tunneling ionization, Auger recombination, and electron-hole scattering taken into account. The most realistic values of the ionization and recombination rates, diffusion coefficients, and drift mobilities of electrons and holes have been used. It is shown that the features of evolution of avalanches and streamers are generally consistent with the result obtained previously for a hypothetic semiconductor with equal kinetic coefficients for electrons and holes. Asymmetry of these coefficients (mostly, the impact-ionization coefficients) manifests itself only at the initial stage of evolution. However, with time, two exponentially self-similar streamers are formed, differing only in the sign of charge of fronts and directions of their propagation. Empirical dependences of the main parameters of streamers on E 0 in the range of 0.34-0.75 MV/cm have been derived for this most important stage of evolution.

  17. Graphene-on-silicon hybrid plasmonic-photonic integrated circuits.

    Science.gov (United States)

    Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke

    2017-06-16

    Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.

  18. Discrimination capability of avalanche counters detecting different ionizing particles

    International Nuclear Information System (INIS)

    Prete, G.; Viesti, G.; Padua Univ.

    1985-01-01

    The discrimination capability of avalanche counters to detect different ionizing particles has been studied using a 252 Cf source. Pulse height, pulse-height resolution and timing properties have been measured as a function of the reduced applied voltage for parallel-plate and parallel-grid avalanche counters. At the highest applied voltages, space charge effects shift the pulse-height signal of the avalanche counter away from being linearly proportional to the stopping power of the detected particles and cause the pulse-height resolution to deteriorate. To optimize the avalanche counter capability, without loss of time resolution, it appears better to operate the detector at voltages well below the breakdown threshold. Measurements with 32 S ions are also reported. (orig.)

  19. A low cost and hybrid technology for integrating silicon sensors or actuators in polymer microfluidic systems

    International Nuclear Information System (INIS)

    Charlot, Samuel; Gué, Anne-Marie; Tasselli, Josiane; Marty, Antoine; Abgrall, Patrick; Estève, Daniel

    2008-01-01

    This paper describes a new technology permitting a hybrid integration of silicon chips in polymer (PDMS and SU8) microfluidic structures. This two-step technology starts with transferring the silicon device onto a rigid substrate (typically PCB) and planarizing it, and then it proceeds with stacking of the polymer-made fluidic network onto the device. The technology is low cost, based on screen printing and lamination, can be applied to treat large surface areas, and is compatible with standard photolithography and vacuum based approaches. We show, as an example, the integration of a thermal sensor inside channels made of PDMS or SU8. The developed structures had no fluid leaks at the Si/polymer interfaces and the electrical circuit was perfectly tightproof. (note)

  20. Initial investigations of the performance of a microstrip gas-avalanche chamber fabricated on a thin silicon-dioxide substrate

    International Nuclear Information System (INIS)

    Biagi, S.F.; Jackson, J.N.; Jones, T.J.; Taylor, S.

    1992-01-01

    We report on the construction of a micro-strip gas-avalanche chamber, designed such that the effective thickness of the insulating dielectric is ≅ 3 μm. Experimental results are presented on the initial observation of pulses from the chamber originating from the energy depositions of X-rays from an Fe 55 source. (orig.)

  1. Statistical evaluation of waveform collapse reveals scale-free properties of neuronal avalanches

    Directory of Open Access Journals (Sweden)

    Aleena eShaukat

    2016-04-01

    Full Text Available Neural avalanches are a prominent form of brain activity characterized by network-wide bursts whose statistics follow a power-law distribution with a slope near 3/2. Recent work suggests that avalanches of different durations can be rescaled and thus collapsed together. This collapse mirrors work in statistical physics where it is proposed to form a signature of systems evolving in a critical state. However, no rigorous statistical test has been proposed to examine the degree to which neuronal avalanches collapse together. Here, we describe a statistical test based on functional data analysis, where raw avalanches are first smoothed with a Fourier basis, then rescaled using a time-warping function. Finally, an F ratio test combined with a bootstrap permutation is employed to determine if avalanches collapse together in a statistically reliable fashion. To illustrate this approach, we recorded avalanches from cortical cultures on multielectrode arrays as in previous work. Analyses show that avalanches of various durations can be collapsed together in a statistically robust fashion. However, a principal components analysis revealed that the offset of avalanches resulted in marked variance in the time-warping function, thus arguing for limitations to the strict fractal nature of avalanche dynamics. We compared these results with those obtained from cultures treated with an AMPA/NMDA receptor antagonist (APV/DNQX, which yield a power-law of avalanche durations with a slope greater than 3/2. When collapsed together, these avalanches showed marked misalignments both at onset and offset time-points. In sum, the proposed statistical evaluation suggests the presence of scale-free avalanche waveforms and constitutes an avenue for examining critical dynamics in neuronal systems.

  2. Avalanche and streamer mode operation of resistive plate chambers

    International Nuclear Information System (INIS)

    Cardarelli, R.; Makeev, V.; Santonico, R.

    1996-01-01

    A resistive plate chamber was operated at voltages increasing in steps of 200 V over a 3 kV interval and the transition between the avalanche and streamer modes was studied. The avalanche amplitude was observed to be exponentially dependent on the operating voltage up to a value, characteristic of the gas, where the avalanche saturation occurs and delayed streamer signals start to appear. Signal waveforms, charge and timing distributions are reported. (orig.)

  3. Avalanche localization and its effects in proportional counters

    International Nuclear Information System (INIS)

    Fischer, J.; Okuno, H.; Walenta, A.H.

    1977-11-01

    Avalanche development around the anode wire in a gas proportional counter is investigated. In the region of proportional gas amplification, the avalanche is found to be well localized on one side of the anode wire, where the electrons arrive along the field lines from the point of primary ionization. Induced signals on electrodes surrounding the anode wire are used to measure the azimuthal position of the avalanche on the anode wire. Practical applications of the phenomena such as left-right assignment in drift chambers and measurement of the angular direction of the primary ionization electrons drifting towards the anode wire are discussed

  4. Automated identification of potential snow avalanche release areas based on digital elevation models

    Directory of Open Access Journals (Sweden)

    Y. Bühler

    2013-05-01

    Full Text Available The identification of snow avalanche release areas is a very difficult task. The release mechanism of snow avalanches depends on many different terrain, meteorological, snowpack and triggering parameters and their interactions, which are very difficult to assess. In many alpine regions such as the Indian Himalaya, nearly no information on avalanche release areas exists mainly due to the very rough and poorly accessible terrain, the vast size of the region and the lack of avalanche records. However avalanche release information is urgently required for numerical simulation of avalanche events to plan mitigation measures, for hazard mapping and to secure important roads. The Rohtang tunnel access road near Manali, Himachal Pradesh, India, is such an example. By far the most reliable way to identify avalanche release areas is using historic avalanche records and field investigations accomplished by avalanche experts in the formation zones. But both methods are not feasible for this area due to the rough terrain, its vast extent and lack of time. Therefore, we develop an operational, easy-to-use automated potential release area (PRA detection tool in Python/ArcGIS which uses high spatial resolution digital elevation models (DEMs and forest cover information derived from airborne remote sensing instruments as input. Such instruments can acquire spatially continuous data even over inaccessible terrain and cover large areas. We validate our tool using a database of historic avalanches acquired over 56 yr in the neighborhood of Davos, Switzerland, and apply this method for the avalanche tracks along the Rohtang tunnel access road. This tool, used by avalanche experts, delivers valuable input to identify focus areas for more-detailed investigations on avalanche release areas in remote regions such as the Indian Himalaya and is a precondition for large-scale avalanche hazard mapping.

  5. Automated identification of potential snow avalanche release areas based on digital elevation models

    Science.gov (United States)

    Bühler, Y.; Kumar, S.; Veitinger, J.; Christen, M.; Stoffel, A.; Snehmani

    2013-05-01

    The identification of snow avalanche release areas is a very difficult task. The release mechanism of snow avalanches depends on many different terrain, meteorological, snowpack and triggering parameters and their interactions, which are very difficult to assess. In many alpine regions such as the Indian Himalaya, nearly no information on avalanche release areas exists mainly due to the very rough and poorly accessible terrain, the vast size of the region and the lack of avalanche records. However avalanche release information is urgently required for numerical simulation of avalanche events to plan mitigation measures, for hazard mapping and to secure important roads. The Rohtang tunnel access road near Manali, Himachal Pradesh, India, is such an example. By far the most reliable way to identify avalanche release areas is using historic avalanche records and field investigations accomplished by avalanche experts in the formation zones. But both methods are not feasible for this area due to the rough terrain, its vast extent and lack of time. Therefore, we develop an operational, easy-to-use automated potential release area (PRA) detection tool in Python/ArcGIS which uses high spatial resolution digital elevation models (DEMs) and forest cover information derived from airborne remote sensing instruments as input. Such instruments can acquire spatially continuous data even over inaccessible terrain and cover large areas. We validate our tool using a database of historic avalanches acquired over 56 yr in the neighborhood of Davos, Switzerland, and apply this method for the avalanche tracks along the Rohtang tunnel access road. This tool, used by avalanche experts, delivers valuable input to identify focus areas for more-detailed investigations on avalanche release areas in remote regions such as the Indian Himalaya and is a precondition for large-scale avalanche hazard mapping.

  6. Extremely small polarization beam splitter based on a multimode interference coupler with a silicon hybrid plasmonic waveguide.

    Science.gov (United States)

    Guan, Xiaowei; Wu, Hao; Shi, Yaocheng; Dai, Daoxin

    2014-01-15

    A novel polarization beam splitter (PBS) with an extremely small footprint is proposed based on a multimode interference (MMI) coupler with a silicon hybrid plasmonic waveguide. The MMI section, covered with a metal strip partially, is designed to achieve mirror imaging for TE polarization. On the other hand, for TM polarization, there is almost no MMI effect since the higher-order TM modes are hardly excited due to the hybrid plasmonic effect. With this design, the whole PBS including the 1.1 μm long MMI section as well as the output section has a footprint as small as ∼1.8 μm×2.5 μm. Besides, the fabrication process is simple since the waveguide dimension is relatively large (e.g., the input/output waveguides widths w ≥300 nm and the MMI width w(MMI)=800 nm). Numerical simulations show that the designed PBS has a broad band of ∼80 nm for an ER >10 dB as well as a large fabrication tolerance to allow a silicon core width variation of -30 nm<Δw<50 nm and a metal strip width variation of -200 nm<Δw(m)<0.

  7. Investigating the Inverse Square Law with the Timepix Hybrid Silicon Pixel Detector: A CERN [at] School Demonstration Experiment

    Science.gov (United States)

    Whyntie, T.; Parker, B.

    2013-01-01

    The Timepix hybrid silicon pixel detector has been used to investigate the inverse square law of radiation from a point source as a demonstration of the CERN [at] school detector kit capabilities. The experiment described uses a Timepix detector to detect the gamma rays emitted by an [superscript 241]Am radioactive source at a number of different…

  8. Avalanches near a solid insulator in nitrogen gas at atmospheric pressure

    International Nuclear Information System (INIS)

    Mahajan, S.M.; Sudarshan, T.S.; Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208)

    1989-01-01

    The pulsed Townsend (PT) technique was used to record the growth of avalanches near a solid insulator in nitrogen gas at 0.1 MPa. Several other nonconventional techniques for releasing initiatory electrons at the cathode are discussed. In this paper, experimental results of avalanches initiated by illuminating a fast (0.6-ns) nitrogen laser onto the cathode triple junction are presented. Data were recorded with plexiglas, Teflon, high-density polyethylene, low-density polyethylene, Delrin, etc. Effect of surface condition, variation of the distance between insulator surface and the avalanche initiation region, and the effect of a large number of previous avalanches on the avalanche characteristics at a particular voltage were studied. The Townsend primary ionization coefficient, hereafter referred to as growth coefficient (α), and drift velocity (V/sub e/) were evaluated through the PT technique. Results indicate that the avalanche growth in the vicinity of a solid insulator is less than that in an identical plain gas gap. Existence of a nonuniform field as a result of surface charges on the insulator and/or field modifications due to the avalanche space charge are believed to be responsible for this behavior

  9. Velocity distribution in snow avalanches

    Science.gov (United States)

    Nishimura, K.; Ito, Y.

    1997-12-01

    In order to investigate the detailed structure of snow avalanches, we have made snow flow experiments at the Miyanomori ski jump in Sapporo and systematic observations in the Shiai-dani, Kurobe Canyon. In the winter of 1995-1996, a new device to measure static pressures was used to estimate velocities in the snow cloud that develops above the flowing layer of avalanches. Measurements during a large avalanche in the Shiai-dani which damaged and destroyed some instruments indicate velocities increased rapidly to more than 50 m/s soon after the front. Velocities decreased gradually in the following 10 s. Velocities of the lower flowing layer were also calculated by differencing measurement of impact pressure. Both recordings in the snow cloud and in the flowing layer changed with a similar trend and suggest a close interaction between the two layers. In addition, the velocity showed a periodic change. Power spectrum analysis of the impact pressure and the static pressure depression showed a strong peak at a frequency between 4 and 6 Hz, which might imply the existence of either ordered structure or a series of surges in the flow.

  10. Improved Work Function of Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonic acid) and its Effect on Hybrid Silicon/Organic Heterojunction Solar Cells

    Science.gov (United States)

    Shen, Xiaojuan; Chen, Ling; Pan, Jianmei; Hu, Yue; Li, Songjun; Zhao, Jie

    2016-11-01

    Hybrid silicon/organic solar cells have been recently extensively investigated due to their simple structure and low-cost fabrication process. However, the efficiency of the solar cells is greatly limited by the barrier height as well as the carrier recombination at the silicon/organic interface. In this work, hydrochloroplatinic acid (H2PtCl6) is employed into the poly(3,4-ethlenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solution, and the work function (WF) of the PEDOT:PSS layer has been successfully improved. Based on the Pt-modified PEDOT:PSS layer, the efficiency of the silicon/PEDOT:PSS cell can be increased to 11.46%, corresponding to 20% enhancement to the one without platinum (Pt) modification. Theoretical and experimental results show that, when increasing the WF of the PEDO:PSS layer, the barrier height between the silicon/PEDOT:PSS interface can be effectively enhanced. Meanwhile, the carrier recombination at the interface is significantly reduced. These results can contribute to better understanding of the interfacial mechanism of silicon/PEDOT:PSS interface, and further improving the device performance of silicon/organic solar cells.

  11. Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

  12. Dynamic hybrid life cycle assessment of energy and carbon of multicrystalline silicon photovoltaic systems.

    Science.gov (United States)

    Zhai, Pei; Williams, Eric D

    2010-10-15

    This paper advances the life cycle assessment (LCA) of photovoltaic systems by expanding the boundary of the included processes using hybrid LCA and accounting for the technology-driven dynamics of embodied energy and carbon emissions. Hybrid LCA is an extended method that combines bottom-up process-sum and top-down economic input-output (EIO) methods. In 2007, the embodied energy was 4354 MJ/m(2) and the energy payback time (EPBT) was 2.2 years for a multicrystalline silicon PV system under 1700 kWh/m(2)/yr of solar radiation. These results are higher than those of process-sum LCA by approximately 60%, indicating that processes excluded in process-sum LCA, such as transportation, are significant. Even though PV is a low-carbon technology, the difference between hybrid and process-sum results for 10% penetration of PV in the U.S. electrical grid is 0.13% of total current grid emissions. Extending LCA from the process-sum to hybrid analysis makes a significant difference. Dynamics are characterized through a retrospective analysis and future outlook for PV manufacturing from 2001 to 2011. During this decade, the embodied carbon fell substantially, from 60 g CO(2)/kWh in 2001 to 21 g/kWh in 2011, indicating that technological progress is realizing reductions in embodied environmental impacts as well as lower module price.

  13. Anthropogenic effect on avalanche and debris flow activity

    Directory of Open Access Journals (Sweden)

    S. A. Sokratov

    2013-01-01

    Full Text Available The paper presents examples of the change in snow avalanches and debris flows activity due to the anthropogenic pressure on vegetation and relief. The changes in dynamical characteristics of selected snow avalanches and debris flows due to the anthropogenic activity are quantified. The conclusion is made that the anthropogenic effects on the snow avalanches and debris flows activity are more pronounced than the possible effects of the climate change. The necessity is expressed on the unavoidable changes of the natural environment as the result of a construction and of use of the constructed infrastructure to be account for in corresponding planning of the protection measures.

  14. Beyond Critical Exponents in Neuronal Avalanches

    Science.gov (United States)

    Friedman, Nir; Butler, Tom; Deville, Robert; Beggs, John; Dahmen, Karin

    2011-03-01

    Neurons form a complex network in the brain, where they interact with one another by firing electrical signals. Neurons firing can trigger other neurons to fire, potentially causing avalanches of activity in the network. In many cases these avalanches have been found to be scale independent, similar to critical phenomena in diverse systems such as magnets and earthquakes. We discuss models for neuronal activity that allow for the extraction of testable, statistical predictions. We compare these models to experimental results, and go beyond critical exponents.

  15. Toward the hybrid organic semiconductor FET (HOSFET) electrical and electrochemical characterization of functionalized and unfunctionalized, covalently bound organic monolayers on silicon

    NARCIS (Netherlands)

    Faber, Erik Jouwert

    2006-01-01

    Since their introduction in 1993 the class of covalently bound organic monolayers on oxide free silicon surfaces have found their way to multiple application fields such as passivation layers in solar cells, masking layers in lithographic processing, insulating films in hybrid moleculesilicon

  16. A novel approach to evaluate and compare computational snow avalanche simulation

    Directory of Open Access Journals (Sweden)

    J.-T. Fischer

    2013-06-01

    Full Text Available An innovative approach for the analysis and interpretation of snow avalanche simulation in three dimensional terrain is presented. Snow avalanche simulation software is used as a supporting tool in hazard mapping. When performing a high number of simulation runs the user is confronted with a considerable amount of simulation results. The objective of this work is to establish an objective, model independent framework to evaluate and compare results of different simulation approaches with respect to indicators of practical relevance, providing an answer to the important questions: how far and how destructive does an avalanche move down slope. For this purpose the Automated Indicator based Model Evaluation and Comparison (AIMEC method is introduced. It operates on a coordinate system which follows a given avalanche path. A multitude of simulation runs is performed with the snow avalanche simulation software SamosAT (Snow Avalanche MOdelling and Simulation – Advanced Technology. The variability of pressure-based run out and avalanche destructiveness along the path is investigated for multiple simulation runs, varying release volume and model parameters. With this, results of deterministic simulation software are processed and analysed by means of statistical methods. Uncertainties originating from varying input conditions, model parameters or the different model implementations are assessed. The results show that AIMEC contributes to the interpretation of avalanche simulations with a broad applicability in model evaluation, comparison as well as examination of scenario variations.

  17. Experimental method to predict avalanches based on neural networks

    Directory of Open Access Journals (Sweden)

    V. V. Zhdanov

    2016-01-01

    Full Text Available The article presents results of experimental use of currently available statistical methods to classify the avalanche‑dangerous precipitations and snowfalls in the Kishi Almaty river basin. The avalanche service of Kazakhstan uses graphical methods for prediction of avalanches developed by I.V. Kondrashov and E.I. Kolesnikov. The main objective of this work was to develop a modern model that could be used directly at the avalanche stations. Classification of winter precipitations into dangerous snowfalls and non‑dangerous ones was performed by two following ways: the linear discriminant function (canonical analysis and artificial neural networks. Observational data on weather and avalanches in the gorge Kishi Almaty in the gorge Kishi Almaty were used as a training sample. Coefficients for the canonical variables were calculated by the software «Statistica» (Russian version 6.0, and then the necessary formula had been constructed. The accuracy of the above classification was 96%. Simulator by the authors L.N. Yasnitsky and F.М. Cherepanov was used to learn the neural networks. The trained neural network demonstrated 98% accuracy of the classification. Prepared statistical models are recommended to be tested at the snow‑avalanche stations. Results of the tests will be used for estimation of the model quality and its readiness for the operational work. In future, we plan to apply these models for classification of the avalanche danger by the five‑point international scale.

  18. Spike avalanches exhibit universal dynamics across the sleep-wake cycle.

    Directory of Open Access Journals (Sweden)

    Tiago L Ribeiro

    2010-11-01

    Full Text Available Scale-invariant neuronal avalanches have been observed in cell cultures and slices as well as anesthetized and awake brains, suggesting that the brain operates near criticality, i.e. within a narrow margin between avalanche propagation and extinction. In theory, criticality provides many desirable features for the behaving brain, optimizing computational capabilities, information transmission, sensitivity to sensory stimuli and size of memory repertoires. However, a thorough characterization of neuronal avalanches in freely-behaving (FB animals is still missing, thus raising doubts about their relevance for brain function.To address this issue, we employed chronically implanted multielectrode arrays (MEA to record avalanches of action potentials (spikes from the cerebral cortex and hippocampus of 14 rats, as they spontaneously traversed the wake-sleep cycle, explored novel objects or were subjected to anesthesia (AN. We then modeled spike avalanches to evaluate the impact of sparse MEA sampling on their statistics. We found that the size distribution of spike avalanches are well fit by lognormal distributions in FB animals, and by truncated power laws in the AN group. FB data surrogation markedly decreases the tail of the distribution, i.e. spike shuffling destroys the largest avalanches. The FB data are also characterized by multiple key features compatible with criticality in the temporal domain, such as 1/f spectra and long-term correlations as measured by detrended fluctuation analysis. These signatures are very stable across waking, slow-wave sleep and rapid-eye-movement sleep, but collapse during anesthesia. Likewise, waiting time distributions obey a single scaling function during all natural behavioral states, but not during anesthesia. Results are equivalent for neuronal ensembles recorded from visual and tactile areas of the cerebral cortex, as well as the hippocampus.Altogether, the data provide a comprehensive link between behavior

  19. Flexible integration of free-standing nanowires into silicon photonics.

    Science.gov (United States)

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  20. Microstructure and Mechanical Behaviour of Stir-Cast Al-Mg-Sl Alloy Matrix Hybrid Composite Reinforced with Corn Cob Ash and Silicon Carbide

    Directory of Open Access Journals (Sweden)

    Oluwagbenga Babajide Fatile

    2014-10-01

    Full Text Available In this present study, the microstructural and mechanical behaviour of Al-Mg-Si alloy matrix composites reinforced with silicon carbide (SiC and Corn cob ash (An agro‑waste was investigated. This research work was aimed at assessing the suitability of developing low cost- high performance Al-Mg-Si hybrid composite. Silicon carbide (SiC particulates added with 0,1,2,3 and 4 wt% Corn cob ash (CCA were utilized to prepare 10 wt% of the reinforcing phase with Al-Mg-Si alloy as matrix using two-step stir casting method. Microstructural characterization, density measurement, estimated percent porosity, tensile testing, and micro‑hardness measurement were used to characterize the composites produced. From the results obtained, CCA has great potential to serve as a complementing reinforcement for the development of low cost‑high performance aluminum hybrid composites.

  1. Are dragon-king neuronal avalanches dungeons for self-organized brain activity?

    Science.gov (United States)

    de Arcangelis, L.

    2012-05-01

    Recent experiments have detected a novel form of spontaneous neuronal activity both in vitro and in vivo: neuronal avalanches. The statistical properties of this activity are typical of critical phenomena, with power laws characterizing the distributions of avalanche size and duration. A critical behaviour for the spontaneous brain activity has important consequences on stimulated activity and learning. Very interestingly, these statistical properties can be altered in significant ways in epilepsy and by pharmacological manipulations. In particular, there can be an increase in the number of large events anticipated by the power law, referred to herein as dragon-king avalanches. This behaviour, as verified by numerical models, can originate from a number of different mechanisms. For instance, it is observed experimentally that the emergence of a critical behaviour depends on the subtle balance between excitatory and inhibitory mechanisms acting in the system. Perturbing this balance, by increasing either synaptic excitation or the incidence of depolarized neuronal up-states causes frequent dragon-king avalanches. Conversely, an unbalanced GABAergic inhibition or long periods of low activity in the network give rise to sub-critical behaviour. Moreover, the existence of power laws, common to other stochastic processes, like earthquakes or solar flares, suggests that correlations are relevant in these phenomena. The dragon-king avalanches may then also be the expression of pathological correlations leading to frequent avalanches encompassing all neurons. We will review the statistics of neuronal avalanches in experimental systems. We then present numerical simulations of a neuronal network model introducing within the self-organized criticality framework ingredients from the physiology of real neurons, as the refractory period, synaptic plasticity and inhibitory synapses. The avalanche critical behaviour and the role of dragon-king avalanches will be discussed in

  2. Advances in gas avalanche photomultipliers

    CERN Document Server

    Breskin, Amos; Buzulutskov, A F; Chechik, R; Garty, E; Shefer, G; Singh, B K

    2000-01-01

    Gas avalanche detectors, combining solid photocathodes with fast electron multipliers, provide an attractive solution for photon localization over very large sensitive areas and under high illumination flux. They offer single-photon sensitivity and the possibility of operation under very intense magnetic fields. We discuss the principal factors governing the operation of gas avalanche photomultipliers. We summarize the recent progress made in alkali-halide and CVD-diamond UV-photocathodes, capable of operation under gas multiplication, and novel thin-film protected alkali-antimonide photocathodes, providing, for the first time, the possibility of operating gas photomultipliers in the visible range. Electron multipliers, adequate for these photon detectors, are proposed and some applications are briefly discussed.

  3. Nanostructural optimization of silicon/PEDOT:PSS hybrid solar cells for performance improvement

    International Nuclear Information System (INIS)

    Wang, Yanzhou; Shao, Pengfei; Li, Yali; Li, Junshuai; He, Deyan; Chen, Qiang

    2017-01-01

    In this paper, an inverted silicon (Si) nanopyramid (iSiNP) surface structure with low aspect ratio and remarkable antireflection is developed through sequential treatments of NaOH and HF/CH 3 COOH/HNO 3 solutions to Si nanowire (SiNW)-textured Si wafers, which are prepared by traditional electroless chemical etching. The iSiNP/PEDOT:PSS hybrid solar cell is fabricated through conformally spin-coating poly(3.4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) onto the iSiNPs; it exhibits enhanced device performance owing to the improved junction and contact quality as compared to the SiNW/PEDOT:PSS counterpart. A power conversion efficiency (PCE) of 9.6% mainly contributed from an increased fill factor (FF) of 0.61 and improved open circuit voltage ( V oc ) of 0.53 V is delivered by the iSiNP/PEDOT:PSS solar cell. As a comparison, the SiNW/PEDOT:PSS structure delivers a 7.1% PCE with a FF of 0.45 and V oc of 0.46 V. Considering the submicro-scale characteristic dimensions, iSiNPs are expected to be applicable to highly efficient thin film Si/PEDOT:PSS hybrid solar cells. (paper)

  4. Catastrophic avalanches and methods of their control

    Directory of Open Access Journals (Sweden)

    N. A. Volodicheva

    2014-01-01

    Full Text Available Definition of such phenomenon as “catastrophic avalanche” is presented in this arti-cle. Several situations with releases of catastrophic avalanches in mountains of Caucasus, Alps, and Central Asia are investigated. Materials of snow-avalanche ob-servations performed since 1960s at the Elbrus station of the Lomonosov Moscow State University (Central Caucasus were used for this work. Complex-valued measures of engineering protection demonstrating different efficiencies are consid-ered.

  5. Synthesis, characterization and functionalization of silicon nanoparticle based hybrid nanomaterials for photovoltaic and biological applications

    Science.gov (United States)

    Xu, Zejing

    Silicon nanoparticles are attractive candidates for biological, photovoltaic and energy storage applications due to their size dependent optoelectronic properties. These include tunable light emission, high brightness, and stability against photo-bleaching relative to organic dyes (see Chapter 1). The preparation and characterization of silicon nanoparticle based hybrid nanomaterials and their relevance to photovoltaic and biological applications are described. The surface-passivated silicon nanoparticles were produced in one step from the reactive high-energy ball milling (RHEBM) of silicon wafers with various organic ligands. The surface structure and optical properties of the passivated silicon nanoparticles were systematically characterized. Fast approaches for purifying and at the same time size separating the silicon nanoparticles using a gravity GPC column were developed. The hydrodynamic diameter and size distribution of these size-separated silicon nanoparticles were determined using GPC and Diffusion Ordered NMR Spectroscopy (DOSY) as fast, reliable alternative approaches to TEM. Water soluble silicon nanoparticles were synthesized by grafting PEG polymers onto functionalized silicon nanoparticles with distal alkyne or azide moieties. The surface-functionalized silicon nanoparticles were produced from the reactive high-energy ball milling (RHEBM) of silicon wafers with a mixture of either 5-chloro-1-pentyne in 1-pentyne or 1,7 octadiyne in 1-hexyne to afford air and water stable chloroalkyl or alkynyl terminated nanoparticles, respectively. Nanoparticles with the ω-chloroalkyl substituents were easily converted to ω-azidoalkyl groups through the reaction of the silicon nanoparticles with sodium azide in DMF. The azido terminated nanoparticles were then grafted with monoalkynyl-PEG polymers using a copper catalyzed alkyne-azide cycloaddition (CuAAC) reaction to afford core-shell silicon nanoparticles with a covalently attached PEG shell. Covalently

  6. Design and characterization of single photon avalanche diodes arrays

    Science.gov (United States)

    Neri, L.; Tudisco, S.; Lanzanò, L.; Musumeci, F.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.

    2010-05-01

    During the last years, in collaboration with ST-Microelectronics, we developed a new avalanche photo sensor, single photon avalanche diode (SPAD) see Ref.[S. Privitera, et al., Sensors 8 (2008) 4636 [1];S. Tudisco et al., IEEE Sensors Journal 8 (2008) 1324 [2

  7. Linear electro-optical behavior of hybrid nanocomposites based on silicon carbide nanocrystals and polymer matrices

    Science.gov (United States)

    Bouclé, J.; Kassiba, A.; Makowska-Janusik, M.; Herlin-Boime, N.; Reynaud, C.; Desert, A.; Emery, J.; Bulou, A.; Sanetra, J.; Pud, A. A.; Kodjikian, S.

    2006-11-01

    An electro-optical activity has been recently reported for hybrid nanocomposite thin films where inorganic silicon carbide nanocrystals (ncSiC) are incorporated into polymer matrices. The role of the interface SiC polymer is suggested as the origin of the observed second order nonlinear optical susceptibility in the hybrid materials based on poly-(methylmethacrylate) (PMMA) or poly-( N -vinylcarbazole) matrices. In this work, we report an analysis of the electro-optical response of this hybrid system as a function of the ncSiC content and surface state in order to precise the interface effect in the observed phenomenon. Two specific ncSiC samples with similar morphology and different surface states are incorporated in the PMMA matrix. The effective Pockels parameters of the corresponding hybrid nanocomposites have been estimated up to 7.59±0.74pm/V ( 1wt.% of ncSiC in the matrix). The interfacial region ncSiC polymer is found to play the main role in the observed effect. Particularly, the electronic defects on the ncSiC nanocrystal surface modify the interfacial electrical interactions between the two components. The results are interpreted and discussed on the basis of the strong influence of these active centers in the interfacial region at the nanoscale, which are found to monitor the local hyperpolarizabilities and the macroscopic nonlinear optical susceptibilities. This approach allows us to complete the description and understanding of the electro-optical response in the hybrid SiC /polymer systems.

  8. Relation of the runaway avalanche threshold to momentum space topology

    Science.gov (United States)

    McDevitt, Christopher J.; Guo, Zehua; Tang, Xian-Zhu

    2018-02-01

    The underlying physics responsible for the formation of an avalanche instability due to the generation of secondary electrons is studied. A careful examination of the momentum space topology of the runaway electron population is carried out with an eye toward identifying how qualitative changes in the momentum space of the runaway electrons is correlated with the avalanche threshold. It is found that the avalanche threshold is tied to the merger of an O and X point in the momentum space of the primary runaway electron population. Such a change of the momentum space topology is shown to be accurately described by a simple analytic model, thus providing a powerful means of determining the avalanche threshold for a range of model assumptions.

  9. Magnetic avalanches in manganese-acetate, "magnetic deflagration"

    Science.gov (United States)

    Suzuki, Yoko

    Mn12-acetate, first synthesized in 1980 by Lis, is one example of a class of many molecules called single molecule magnets (SMMs) or molecular nanomagnets. These molecules have several atomic spins strongly coupled together within each molecule. They exhibit interesting quantum mechanical phenomena at low temperatures such as quantum tunneling of magnetization, which was first found with Mn12-acetate in 1996 by Friedman, et al. , and Berry phase oscillations which were measured in Fe8 (another SMM) in 1999 by Wernsdorfer, et al. In addition to possible application as memory storage and qubits for quantum computers, these systems provide the means for studies of mesoscopic physics as well as the interactions of the molecules with their environment, such as phonon, photon, nuclear spin, intermolecular dipole, and exchange interactions. Mn12-acetate has twelve Mn ions magnetically coupled in the center of the molecule yielding a giant spin of S = 10 at low temperature. It also has a large uniaxial anisotropy of 65 K. Below 3 K, magnetization curves show strong hysteresis due to the anisotropy barrier. At thesis temperatures, the spin relaxes through the barrier by quantum tunneling of magnetization, which produces regularly-spaced multiple resonant steps in the hysteresis curve. Magnetic avalanches, first detected by Paulsen et al., also occur for some samples only at low temperature, leading to a very fast single-step reversal of the full magnetization, which clearly differs from relaxation by tunneling. In this thesis, I present the results of detailed experimental studies of two aspects of magnetic avalanche phenomenon: "conditions for the triggering of avalanches" and "propagation of the avalanche front". In the first study, we find the magnetic fields at which avalanches occur are stochastically distributed in a particular range of fields. For the second study, we conducted local time-resolved measurements. The results indicate the magnetization avalanches spread

  10. Poly(3-hexylthiophene) films by electrospray deposition for crystalline silicon/organic hybrid junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hiate, Taiga; Miyauchi, Naoto; Tang, Zeguo; Ishikawa, Ryo; Ueno, Keiji; Shirai, Hajime [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 858-3676 (Japan)

    2012-10-15

    The electrospray deposition (ESD) of poly(3-hexylthiophene) (P3HT) and conductive poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) on P3HT for use in crystalline silicon/organic hybrid heterojunction solar cells on CZ crystalline silicon (c-Si) (100) wafer was investigated using real-time characterization by spectroscopic ellipsometry (SE). In contrast to the nonuniform deposition of products frequently obtained by conventional spin-coating, a uniform deposition of P3HT and PEDOT:PSS films were achieved on flat and textured hydrophobic c-Si(100) wafers by adjusting the deposition conditions. The c-Si/P3HT/PEDOT:PSS heterojunction solar cells exhibited efficiencies of 4.1 and 6.3% on flat and textured c-Si(100) wafers, respectively. These findings suggest that ESD is a promising method for the uniform deposition of P3HT and PEDOT:PSS films on flat and textured hydrophobic substrates. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. La Carte de Localisation Probable des Avalanches (CPLA

    Directory of Open Access Journals (Sweden)

    Gilles BORREL

    1994-12-01

    Full Text Available La Carte de Localisation Probable des Avalanches (CPLA indique l’enveloppe des limites extrêmes connues atteintes par les avalanches, ainsi que les travaux de protection associés. Il s’agit d’un document informatif et non d’une carte de risque. Depuis 1990, les données thématiques sont numérisées.

  12. Phase avalanches in near-adiabatic evolutions

    International Nuclear Information System (INIS)

    Vertesi, T.; Englman, R.

    2006-01-01

    In the course of slow, nearly adiabatic motion of a system, relative changes in the slowness can cause abrupt and high magnitude phase changes, ''phase avalanches,'' superimposed on the ordinary geometric phases. The generality of this effect is examined for arbitrary Hamiltonians and multicomponent (>2) wave packets and is found to be connected (through the Blaschke term in the theory of analytic signals) to amplitude zeros in the lower half of the complex time plane. Motion on a nonmaximal circle on the Poincare-sphere suppresses the effect. A spectroscopic transition experiment can independently verify the phase-avalanche magnitudes

  13. LYSO crystal calorimeter readout with silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Berra, A., E-mail: alessandro.berra@gmail.com [Università degli Studi dell' Insubria (Italy); INFN sezione di Milano Bicocca (Italy); Bonvicini, V. [INFN sezione di Trieste (Italy); Cecchi, C.; Germani, S. [INFN sezione di Perugia (Italy); Guffanti, D. [Università degli Studi dell' Insubria (Italy); Lietti, D. [Università degli Studi dell' Insubria (Italy); INFN sezione di Milano Bicocca (Italy); Lubrano, P.; Manoni, E. [INFN sezione di Perugia (Italy); Prest, M. [Università degli Studi dell' Insubria (Italy); INFN sezione di Milano Bicocca (Italy); Rossi, A. [INFN sezione di Perugia (Italy); Vallazza, E. [INFN sezione di Trieste (Italy)

    2014-11-01

    Large area Silicon PhotoMultipliers (SiPMs) are the new frontier of the development of readout systems for scintillating detectors. A SiPM consists of a matrix of parallel-connected silicon micropixels operating in limited Geiger–Muller avalanche mode, and thus working as independent photon counters with a very high gain (∼10{sup 6}). This contribution presents the performance in terms of linearity and energy resolution of an electromagnetic homogeneous calorimeter composed of 9∼18X{sub 0} LYSO crystals. The crystals were readout by 36 4×4 mm{sup 2} SiPMs (4 for each crystal) produced by FBK-irst. This calorimeter was tested at the Beam Test Facility at the INFN laboratories in Frascati with a single- and multi-particle electron beam in the 100–500 MeV energy range.

  14. Charge transfer processes in hybrid solar cells composed of amorphous silicon and organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Sebastian; Neher, Dieter [Universitaet Potsdam, Inst. Physik u. Astronomie, Karl-Liebknecht-Strasse 24/25, 14467 Potsdam-Golm (Germany); Schulze, Tim; Korte, Lars [Helmholtz Zentrum Berlin, Inst. fuer Silizium Photovoltaik, Kekulestrasse 5, 12489 Berlin (Germany)

    2011-07-01

    The efficiency of hybrid solar cells composed of organic materials and amorphous hydrogenated silicon (a-Si:H) strongly depends upon the efficiency of charge transfer processes at the inorganic-organic interface. We investigated the performance of devices comprising an ITO/a-Si:H(n-type)/a-Si:H(intrinsic)/organic/metal multilayer structure and using two different organic components: zinc phthalocyanine (ZnPc) and poly(3-hexylthiophene) (P3HT). The results show higher power conversion- and quantum efficiencies for the P3HT based cells, compared to ZnPc. This can be explained by larger energy-level offset at the interface between the organic layer and a-Si:H, which facilitates hole transfer from occupied states in the valence band tail to the HOMO of the organic material and additionally promotes exciton splitting. The performance of the a-Si:H/P3HT cells can be further improved by treatment of the amorphous silicon surface with hydrofluoric acid (HF) and p-type doping of P3HT with F4TCNQ. The improved cells reached maximum power conversion efficiencies of 1%.

  15. Development of thin-film Si HYBRID solar module

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Akihiko; Gotoh, Masahiro; Sawada, Toru; Fukuda, Susumu; Yoshimi, Masashi; Yamamoto, Kenji; Nomura, Takuji [Kaneka Corporation, 2-1-1, Hieitsuji, Otsu, Shiga 520-0104 (Japan)

    2009-06-15

    The device current-voltage (I-V) characteristics of thin-film silicon stacked tandem solar modules (HYBRID modules), consisting of a hydrogenated amorphous silicon (a-Si:H) cell and a thin-film crystalline silicon solar cell ({mu}c-Si), have been investigated under various spectral irradiance distributions. The performance of the HYBRID module varied periodically in natural sunlight due to the current-limiting property of the HYBRID module and the environmental effects. The behavior based on the current-limiting property was demonstrated by the modelling of the I-V curves using the linear interpolation method for each component cell. The improvement of the performance for the HYBRID module in natural sunlight will also be discussed from the viewpoint of the device design of the component cells. (author)

  16. IFKIS - a basis for managing avalanche risk in settlements and on roads in Switzerland

    Directory of Open Access Journals (Sweden)

    M. Bründl

    2004-01-01

    Full Text Available After the avalanche winter of 1999 in Switzerland, which caused 17 deaths and damage of over CHF 600 mill. in buildings and on roads, the project IFKIS, aimed at improving the basics of organizational measures (closure of roads, evacuation etc. in avalanche risk management, was initiated. The three main parts of the project were the development of a compulsory checklist for avalanche safety services, a modular education and training course program and an information system for safety services. The information system was developed in order to improve both the information flux between the national centre for avalanche forecasting, the Swiss Federal Institute for Snow and Avalanche Research SLF, and the local safety services on the one hand and the communication between avalanche safety services in the communities on the other hand. The results of this project make a valuable contribution to strengthening organizational measures in avalanche risk management and to closing the gaps, which became apparent during the avalanche winter of 1999. They are not restricted to snow avalanches but can also be adapted for dealing with other natural hazard processes and catastrophes.

  17. A hybrid tandem solar cell based on hydrogenated amorphous silicon and dye-sensitized TiO{sub 2} film

    Energy Technology Data Exchange (ETDEWEB)

    Hao Sancun [Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, 362021 (China); Institute of Photo-Electronics of Nankai University, Tianjin 300071 (China); Jiangsu Shuangdeng Group Co. Ltd, Thaizhou, Jiangsu, 225526 (China); Wu Jihuai, E-mail: jhwu@hqu.edu.cn [Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, 362021 (China); Sun Zhonglin [Institute of Photo-Electronics of Nankai University, Tianjin 300071 (China)

    2012-01-01

    Hydrogenated amorphous silicon film (a-Si:H) as top cell is introduced to dye-sensitized titanium dioxide nanocrystalline solar cell (DSSC) as bottom cell to assemble a hybrid tandem solar cell. The hybrid tandem solar cell fabricated with the thicknesses a-Si:H layer of 235 nm, ZnO/Pt interlayer of 100 nm and DSSC layer of 8.5 {mu}m achieves a photo-to-electric energy conversion efficiency of 8.31%, a short circuit current density of 10.61 mA{center_dot}cm{sup -2} and an open-circuit voltage of 1.45 V under a simulated solar light irradiation of 100 mW{center_dot}cm{sup -2}.

  18. Stratigraphic reconstruction of two debris avalanche deposits at Colima Volcano (Mexico): Insights into pre-failure conditions and climate influence

    Science.gov (United States)

    Roverato, M.; Capra, L.; Sulpizio, R.; Norini, G.

    2011-10-01

    Throughout its history, Colima Volcano has experienced numerous partial edifice collapses with associated emplacement of debris avalanche deposits of contrasting volume, morphology and texture. A detailed stratigraphic study in the south-eastern sector of the volcano allowed the recognition of two debris avalanche deposits, named San Marcos (> 28,000 cal yr BP, V = ~ 1.3 km 3) and Tonila (15,000-16,000 cal yr BP, V = ~ 1 km 3 ). This work sheds light on the pre-failure conditions of the volcano based primarily on a detailed textural study of debris avalanche deposits and their associated pyroclastic and volcaniclastic successions. Furthermore, we show how the climate at the time of the Tonila collapse influenced the failure mechanisms. The > 28,000 cal yr BP San Marcos collapse was promoted by edifice steep flanks and ongoing tectonic and volcanotectonic deformation, and was followed by a magmatic eruption that emplaced pyroclastic flow deposits. In contrast, the Tonila failure occurred just after the Last Glacial Maximum (22,000-18,000 cal BP) and, in addition to the typical debris avalanche textural characteristics (angular to sub-angular clasts, coarse matrix, jigsaw fit) it shows a hybrid facies characterized by debris avalanche blocks embedded in a finer, homogenous and partially cemented matrix, a texture more characteristic of debris flow deposits. The Tonila debris avalanche is directly overlain by a 7-m thick hydromagmatic pyroclastic succession. Massive debris flow deposits, often more than 10 m thick and containing large amounts of tree trunk logs, represent the top unit in the succession. Fluvial deposits also occur throughout all successions; these represent periods of highly localized stream reworking. All these lines of evidence point to the presence of water in the edifice prior to the Tonila failure, suggesting it may have been a weakening factor. The Tonila failure appears to represent an anomalous event related to the particular climatic

  19. Approaches to single photon detection

    International Nuclear Information System (INIS)

    Thew, R.T.; Curtz, N.; Eraerds, P.; Walenta, N.; Gautier, J.-D.; Koller, E.; Zhang, J.; Gisin, N.; Zbinden, H.

    2009-01-01

    We present recent results on our development of single photon detectors, including: gated and free-running InGaAs/InP avalanche photodiodes (APDs); hybrid detection systems based on sum-frequency generation (SFG) and Si APDs-SFG-Si APDs; and SSPDs (superconducting single photon detectors), for telecom wavelengths; as well as SiPM (Silicon photomultiplier) detectors operating in the visible regime.

  20. Post-glacial rock avalanches in the Obersee Valley, Glarner Alps, Switzerland

    Science.gov (United States)

    Nagelisen, Jan; Moore, Jeffrey R.; Vockenhuber, Christoph; Ivy-Ochs, Susan

    2015-06-01

    The geological record of prehistoric rock avalanches provides invaluable data for assessing the hazard posed by these rare but destructive mass movements. Here we investigate two large rock avalanches in the Obersee valley of the Glarner Alps, Switzerland, providing detailed mapping of landslide and related Quaternary phenomena, revised volume estimates for each event, and surface exposure dating of rock avalanche deposits. The Rautispitz rock avalanche originated from the southern flank of the Obersee valley, releasing approximately 91 million m3 of limestone on steeply-dipping bedding planes. Debris had maximum horizontal travel distance of ~ 5000 m, a fahrboeschung angle (relating fall height to length) of 18°, and was responsible for the creation of Lake Obersee; deposits are more than 130 m thick in places. The Platten rock avalanche encompassed a source volume of 11 million m3 sliding from the northern flank of the Obersee valley on similar steeply-dipping limestone beds (bedrock forms a syncline under the valley). Debris had a maximum horizontal travel distance of 1600 m with a fahrboeschung angle of 21°, and is more than 80 m thick in places. Deposits of the Platten rock avalanche are superposed atop those from the Rautispitz event at the end of the Obersee valley where they dam Lake Haslensee. Runout for both events was simulated using the dynamic analysis code DAN3D; results showed excellent match to mapped deposit extents and thickness and helped confirm the hypothesized single-event failure scenarios. 36Cl cosmogenic nuclide surface exposure dating of 13 deposited boulders revealed a Younger Dryas age of 12.6 ± 1.0 ka for the Rautispitz rock avalanche and a mid-Holocene age of 6.1 ± 0.8 ka for the Platten rock avalanche. A seismological trigger is proposed for the former event due to potentially correlated turbidite deposits in nearby Lake Zurich.

  1. Forecasting of wet snow avalanche activity: Proof of concept and operational implementation

    Science.gov (United States)

    Gobiet, Andreas; Jöbstl, Lisa; Rieder, Hannes; Bellaire, Sascha; Mitterer, Christoph

    2017-04-01

    State-of-the-art tools for the operational assessment of avalanche danger include field observations, recordings from automatic weather stations, meteorological analyses and forecasts, and recently also indices derived from snowpack models. In particular, an index for identifying the onset of wet-snow avalanche cycles (LWCindex), has been demonstrated to be useful. However, its value for operational avalanche forecasting is currently limited, since detailed, physically based snowpack models are usually driven by meteorological data from automatic weather stations only and have therefore no prognostic ability. Since avalanche risk management heavily relies on timely information and early warnings, many avalanche services in Europe nowadays start issuing forecasts for the following days, instead of the traditional assessment of the current avalanche danger. In this context, the prognostic operation of detailed snowpack models has recently been objective of extensive research. In this study a new, observationally constrained setup for forecasting the onset of wet-snow avalanche cycles with the detailed snow cover model SNOWPACK is presented and evaluated. Based on data from weather stations and different numerical weather prediction models, we demonstrate that forecasts of the LWCindex as indicator for wet-snow avalanche cycles can be useful for operational warning services, but is so far not reliable enough to be used as single warning tool without considering other factors. Therefore, further development currently focuses on the improvement of the forecasts by applying ensemble techniques and suitable post processing approaches to the output of numerical weather prediction models. In parallel, the prognostic meteo-snow model chain is operationally used by two regional avalanche warning services in Austria since winter 2016/2017 for the first time. Experiences from the first operational season and first results from current model developments will be reported.

  2. Application of statistical and dynamics models for snow avalanche hazard assessment in mountain regions of Russia

    Science.gov (United States)

    Turchaninova, A.

    2012-04-01

    The estimation of extreme avalanche runout distances, flow velocities, impact pressures and volumes is an essential part of snow engineering in mountain regions of Russia. It implies the avalanche hazard assessment and mapping. Russian guidelines accept the application of different avalanche models as well as approaches for the estimation of model input parameters. Consequently different teams of engineers in Russia apply various dynamics and statistical models for engineering practice. However it gives more freedom to avalanche practitioners and experts but causes lots of uncertainties in case of serious limitations of avalanche models. We discuss these problems by presenting the application results of different well known and widely used statistical (developed in Russia) and avalanche dynamics models for several avalanche test sites in the Khibini Mountains (The Kola Peninsula) and the Caucasus. The most accurate and well-documented data from different powder and wet, big rare and small frequent snow avalanche events is collected from 1960th till today in the Khibini Mountains by the Avalanche Safety Center of "Apatit". This data was digitized and is available for use and analysis. Then the detailed digital avalanche database (GIS) was created for the first time. It contains contours of observed avalanches (ESRI shapes, more than 50 years of observations), DEMs, remote sensing data, description of snow pits, photos etc. Thus, the Russian avalanche data is a unique source of information for understanding of an avalanche flow rheology and the future development and calibration of the avalanche dynamics models. GIS database was used to analyze model input parameters and to calibrate and verify avalanche models. Regarding extreme dynamic parameters the outputs using different models can differ significantly. This is unacceptable for the engineering purposes in case of the absence of the well-defined guidelines in Russia. The frequency curves for the runout distance

  3. High voltage short plus generation based on avalanche circuit

    International Nuclear Information System (INIS)

    Hu Yuanfeng; Yu Xiaoqi

    2006-01-01

    Simulate the avalanche circuit in series with PSPICE module, design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera. The output voltage ranges 1.2 KV into 50 ohm load. The rise time of the circuit is less than 3 ns. (authors)

  4. Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

    Energy Technology Data Exchange (ETDEWEB)

    Pellion, D.; Jradi, K.; Brochard, N. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France); Prêle, D. [APC – CNRS/Univ. Paris Diderot, Paris (France); Ginhac, D. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France)

    2015-07-01

    Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 µm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm{sup 2}) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters (Silicon PhotoMultiplier – SiPM) or high resolution imagers (SPAD imager). The present work investigates SPAD geometry. MOS transistor has been used instead of resistor to adjust the quenching resistance and find optimum value. From this first set of results, a detailed study of the dark count rate (DCR) has been conducted. Our results show a dark count rate increase with the size of the photodiodes and the temperature (at T=22.5 °C, the DCR of a 10 µm-photodiode is 2020 count s{sup −1} while it is 270 count s{sup −1} at T=−40 °C for a overvoltage of 800 mV). A small pixel size is desirable, because the DCR per unit area decreases with the pixel size. We also found that the adjustment

  5. Electric field distribution and simulation of avalanche formation due ...

    Indian Academy of Sciences (India)

    Electric field distributions and their role in the formation of avalanche due to the passage of heavy ions in parallel grid avalanche type wire chamber detectors are evaluated using a Monte Carlo simulation. The relative merits and demerits of parallel and crossed wire grid configurations are studied. It is found that the crossed ...

  6. A new web-based system to improve the monitoring of snow avalanche hazard in France

    Science.gov (United States)

    Bourova, Ekaterina; Maldonado, Eric; Leroy, Jean-Baptiste; Alouani, Rachid; Eckert, Nicolas; Bonnefoy-Demongeot, Mylene; Deschatres, Michael

    2016-05-01

    Snow avalanche data in the French Alps and Pyrenees have been recorded for more than 100 years in several databases. The increasing amount of observed data required a more integrative and automated service. Here we report the comprehensive web-based Snow Avalanche Information System newly developed to this end for three important data sets: an avalanche chronicle (Enquête Permanente sur les Avalanches, EPA), an avalanche map (Carte de Localisation des Phénomènes d'Avalanche, CLPA) and a compilation of hazard and vulnerability data recorded on selected paths endangering human settlements (Sites Habités Sensibles aux Avalanches, SSA). These data sets are now integrated into a common database, enabling full interoperability between all different types of snow avalanche records: digitized geographic data, avalanche descriptive parameters, eyewitness reports, photographs, hazard and risk levels, etc. The new information system is implemented through modular components using Java-based web technologies with Spring and Hibernate frameworks. It automates the manual data entry and improves the process of information collection and sharing, enhancing user experience and data quality, and offering new outlooks to explore and exploit the huge amount of snow avalanche data available for fundamental research and more applied risk assessment.

  7. Evaluation and operationalization of a novel forest detrainment modeling approach for computational snow avalanche simulation

    Science.gov (United States)

    Teich, M.; Feistl, T.; Fischer, J.; Bartelt, P.; Bebi, P.; Christen, M.; Grêt-Regamey, A.

    2013-12-01

    Two-dimensional avalanche simulation software operating in three-dimensional terrain are widely used for hazard zoning and engineering to predict runout distances and impact pressures of snow avalanche events. Mountain forests are an effective biological protection measure; however, the protective capacity of forests to decelerate or even to stop avalanches that start within forested areas or directly above the treeline is seldom considered in this context. In particular, runout distances of small- to medium-scale avalanches are strongly influenced by the structural conditions of forests in the avalanche path. This varying decelerating effect has rarely been addressed or implemented in avalanche simulation. We present an evaluation and operationalization of a novel forest detrainment modeling approach implemented in the avalanche simulation software RAMMS. The new approach accounts for the effect of forests in the avalanche path by detraining mass, which leads to a deceleration and runout shortening of avalanches. The extracted avalanche mass caught behind trees stops immediately and, therefore, is instantly subtracted from the flow and the momentum of the stopped mass is removed from the total momentum of the avalanche flow. This relationship is parameterized by the empirical detrainment coefficient K [Pa] which accounts for the braking power of different forest types per unit area. To define K dependent on specific forest characteristics, we simulated 40 well-documented small- to medium-scale avalanches which released in and ran through forests with varying K-values. Comparing two-dimensional simulation results with one-dimensional field observations for a high number of avalanche events and simulations manually is however time consuming and rather subjective. In order to process simulation results in a comprehensive and standardized way, we used a recently developed automatic evaluation and comparison method defining runout distances based on a pressure

  8. Stratigraphic reconstruction of the 13 ka BP debris avalanche deposit at Colima volcano (Mexico): effect of climatic conditions on the flow mobility

    Science.gov (United States)

    Roverato, M.; Capra, L.

    2010-12-01

    Colima volcano is an andesitic stratovolcano located in the western part of the Trans-Mexican Volcanic Belt (TMVB) and at the southern end of the N-S trending Colima graben, about 70 km from the Pacific Ocean coast. It is probably the most active Mexican volcano in historic time and one of the most active of North America. Colima volcano yielded numerous partial edifice collapses with emplacement of debris avalanche deposits (DADs) of contrasting volume, morphology, texture and origin. This work has the aim to provide the evidences of how the climatic condition during the 13 ka flank collapse of the Colima volcano affected the textural characteristic and the mobility of the debris avalanche and debris flow originated from this event that occurred just after the Last Glacial Maximum in Mexico (18.4-14.5 ka 14C BP with snow line at 3600 m a.s.l. up to 13 ka BP). The 13,000 yrs old debris avalanche deposit, here named Tonila (TDAD) presents the typical debris avalanche textural characteristics (angular to sub-angular clasts, coarse matrix, jigsaw fit) but at approximately 13 km from the source, the deposit transforms to an hybrid phase with debris avalanche fragments imbedded in a finer, homogenous and indurated matrix more similar to a debris flow deposit. The debris avalanche deposit is directly overly by debris flows, often more than 10 m thick that contains large amount of logs from pine tree, mostly accumulated toward the base and imbricated down flow. Fluvial deposits also occur throughout all successions, representing periods of stream and river reworking highly localized and re-establishment. All these evidences point to the presence of water in the mass previous to the failure. The event here described represent an anomalous event between the previously described deposit associated to volcanic complex, and evidence as climatic condition can alter and modifies the depositional sequences incrementing the hazard.

  9. Rock avalanches clusters along the northern Chile coastal scarp

    Science.gov (United States)

    Crosta, G. B.; Hermanns, R. L.; Dehls, J.; Lari, S.; Sepulveda, S.

    2017-07-01

    Rock avalanche clusters can be relevant indicators of the evolution of specific regions. They can be used to define: the type and intensity of triggering events, their recurrence and potential probability of occurrence, the progressive damage of the rock mass, the mechanisms of transport and deposition, as well as the environmental conditions at the time of occurrence. This paper tackles these subjects by analyzing two main clusters of rock avalanches (each event between 0.6 and 30 Mm3), separated by few kilometers and located along the coastal scarp of Northern Chile, south of Iquique. It lies, hence, within a seismic area characterized by a long seismic gap that ended on April 1st, 2014 with a Mw 8.2 earthquake. The scar position, high along the coastal cliff, supports seismic triggering for these clusters. The deposits' relative positions are used to obtain the sequence of rock avalanching events for each cluster. The progressive decrease of volume in the sequence of rock avalanches forming each cluster fits well the theoretical models for successive slope failures. These sequences seem to agree with those derived by dating the deposits with ages spanning between 4 kyr and 60 kyr. An average uplift rate of 0.2 mm/yr in the last 40 kyr is estimated for the coastal plain giving a further constraint to the rock avalanche deposition considering the absence of reworking of the deposits. Volume estimates and datings allow the estimation of an erosion rate contribution of about 0.098-0.112 mm km- 2 yr- 1 which is well comparable to values presented in the literature for earthquake induced landslides. We have carried out numerical modeling in order to analyze the mobility of the rock avalanches and examine the environmental conditions that controlled the runout. In doing so, we have considered the sequence of individual rock avalanches within the specific clusters, thus including in the models the confining effect caused by the presence of previous deposits. Bingham

  10. Using stereo satellite imagery to account for ablation, entrainment, and compaction in volume calculations for rock avalanches on Glaciers: Application to the 2016 Lamplugh Rock Avalanche in Glacier Bay National Park, Alaska

    Science.gov (United States)

    Bessette-Kirton, Erin; Coe, Jeffrey A.; Zhou, Wendy

    2018-01-01

    The use of preevent and postevent digital elevation models (DEMs) to estimate the volume of rock avalanches on glaciers is complicated by ablation of ice before and after the rock avalanche, scour of material during rock avalanche emplacement, and postevent ablation and compaction of the rock avalanche deposit. We present a model to account for these processes in volume estimates of rock avalanches on glaciers. We applied our model by calculating the volume of the 28 June 2016 Lamplugh rock avalanche in Glacier Bay National Park, Alaska. We derived preevent and postevent 2‐m resolution DEMs from WorldView satellite stereo imagery. Using data from DEM differencing, we reconstructed the rock avalanche and adjacent surfaces at the time of occurrence by accounting for elevation changes due to ablation and scour of the ice surface, and postevent deposit changes. We accounted for uncertainties in our DEMs through precise coregistration and an assessment of relative elevation accuracy in bedrock control areas. The rock avalanche initially displaced 51.7 ± 1.5 Mm3 of intact rock and then scoured and entrained 13.2 ± 2.2 Mm3 of snow and ice during emplacement. We calculated the total deposit volume to be 69.9 ± 7.9 Mm3. Volume estimates that did not account for topographic changes due to ablation, scour, and compaction underestimated the deposit volume by 31.0–46.8 Mm3. Our model provides an improved framework for estimating uncertainties affecting rock avalanche volume measurements in glacial environments. These improvements can contribute to advances in the understanding of rock avalanche hazards and dynamics.

  11. A new detector concept for silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Sadigov, A., E-mail: saazik@yandex.ru [National Nuclear Research Center, Baku (Azerbaijan); Ahmadov, F.; Ahmadov, G. [National Nuclear Research Center, Baku (Azerbaijan); Ariffin, A.; Khorev, S. [Zecotek Photonics Inc., Vancouver (Canada); Sadygov, Z. [National Nuclear Research Center, Baku (Azerbaijan); Joint Institute for Nuclear Research, Dubna (Russian Federation); Suleymanov, S. [National Nuclear Research Center, Baku (Azerbaijan); Zerrouk, F. [Zecotek Photonics Inc., Vancouver (Canada); Madatov, R. [Institute of Radiation Problems, Baku (Azerbaijan)

    2016-07-11

    A new design and principle of operation of silicon photomultipliers are presented. The new design comprises a semiconductor substrate and an array of independent micro-phototransistors formed on the substrate. Each micro-phototransistor comprises a photosensitive base operating in Geiger mode and an individual micro-emitter covering a small part of the base layer, thereby creating, together with this latter, a micro-transistor. Both micro-emitters and photosensitive base layers are connected with two respective independent metal grids via their individual micro-resistors. The total value of signal gain in the proposed silicon photomultiplier is a result of both the avalanche gain in the base layer and the corresponding gain in the micro-transistor. The main goals of the new design are: significantly lower both optical crosstalk and after-pulse effects at high signal amplification, improve speed of single photoelectron pulse formation, and significantly reduce the device capacitance.

  12. Intermittent flow under constant forcing: Acoustic emission from creep avalanches

    Science.gov (United States)

    Salje, Ekhard K. H.; Liu, Hanlong; Jin, Linsen; Jiang, Deyi; Xiao, Yang; Jiang, Xiang

    2018-01-01

    While avalanches in field driven ferroic systems (e.g., Barkhausen noise), domain switching of martensitic nanostructures, and the collapse of porous materials are well documented, creep avalanches (avalanches under constant forcing) were never observed. Collapse avalanches generate particularly large acoustic emission (AE) signals and were hence chosen to investigate crackling noise under creep conditions. Piezoelectric SiO2 has a strong piezoelectric response even at the nanoscale so that we chose weakly bound SiO2 spheres in natural sandstone as a representative for the study of avalanches under time-independent, constant force. We found highly non-stationary crackling noise with four activity periods, each with power law distributed AE emission. Only the period before the final collapse shows the mean field behavior (ɛ near 1.39), in agreement with previous dynamic measurements at a constant stress rate. All earlier event periods show collapse with larger exponents (ɛ = 1.65). The waiting time exponents are classic with τ near 2.2 and 1.32. Creep data generate power law mixing with "effective" exponents for the full dataset with combinations of mean field and non-mean field regimes. We find close agreement with the predicted time-dependent fiber bound simulations, including events and waiting time distributions. Båth's law holds under creep conditions.

  13. Performance estimation of photovoltaic–thermoelectric hybrid systems

    International Nuclear Information System (INIS)

    Zhang, Jin; Xuan, Yimin; Yang, Lili

    2014-01-01

    A theoretical model for evaluating the efficiency of concentrating PV–TE (photovoltaic–thermoelectric) hybrid system is developed in this paper. Hybrid systems with different photovoltaic cells are studied, including crystalline silicon photovoltaic cell, silicon thin-film photovoltaic cell, polymer photovoltaic cell and copper indium gallium selenide photovoltaic cell. The influence of temperature on the efficiency of photovoltaic cell has been taken into account based on the semiconductor equations, which reveals different efficiency temperature characteristic of polymer photovoltaic cells. It is demonstrated that the polycrystalline silicon thin-film photovoltaic cell is suitable for concentrating PV–TE hybrid system through optimization of the convection heat transfer coefficient and concentrating ratio. The polymer photovoltaic cell is proved to be suitable for non-concentrating PV–TE hybrid system. - Highlights: • Performances of four types of photovoltaic–thermoelectric hybrid systems are studied. • Temperature is one of dominant factors of affecting the conversion efficiency of PV–TE systems. • One can select a proper PV–TE assembly system according to given operating conditions

  14. Stellar Winds and Dust Avalanches in the AU Mic Debris Disk

    Energy Technology Data Exchange (ETDEWEB)

    Chiang, Eugene; Fung, Jeffrey, E-mail: echiang@astro.berkeley.edu, E-mail: jeffrey.fung@berkeley.edu [Department of Astronomy, University of California at Berkeley, Campbell Hall, Berkeley, CA 94720-3411 (United States)

    2017-10-10

    We explain the fast-moving, ripple-like features in the edge-on debris disk orbiting the young M dwarf AU Mic. The bright features are clouds of submicron dust repelled by the host star’s wind. The clouds are produced by avalanches: radial outflows of dust that gain exponentially more mass as they shatter background disk particles in collisional chain reactions. The avalanches are triggered from a region a few au across—the “avalanche zone”—located on AU Mic’s primary “birth” ring at a true distance of ∼35 au from the star but at a projected distance more than a factor of 10 smaller: the avalanche zone sits directly along the line of sight to the star, on the side of the ring nearest Earth, launching clouds that disk rotation sends wholly to the southeast, as observed. The avalanche zone marks where the primary ring intersects a secondary ring of debris left by the catastrophic disruption of a progenitor up to Varuna in size, less than tens of thousands of years ago. Only where the rings intersect are particle collisions sufficiently violent to spawn the submicron dust needed to seed the avalanches. We show that this picture works quantitatively, reproducing the masses, sizes, and velocities of the observed escaping clouds. The Lorentz force exerted by the wind’s magnetic field, whose polarity reverses periodically according to the stellar magnetic cycle, promises to explain the observed vertical undulations. The timescale between avalanches, about 10 yr, might be set by time variability of the wind mass loss rate or, more speculatively, by some self-regulating limit cycle.

  15. Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

    Directory of Open Access Journals (Sweden)

    Matias Urdampilleta

    2015-08-01

    Full Text Available Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer because of silicon’s “semiconductor vacuum” character and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability, and scalability. Here, we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum-dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterize the charge dynamics, which reveals a charge T_{2}^{*} of 200 ps and a relaxation time T_{1} of 100 ns. Additionally, we demonstrate a spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.

  16. Time lapse photography as an approach to understanding glide avalanche activity

    Science.gov (United States)

    Hendrikx, Jordy; Peitzsch, Erich H.; Fagre, Daniel B.

    2012-01-01

    Avalanches resulting from glide cracks are notoriously difficult to forecast, but are a recurring problem for numerous avalanche forecasting programs. In some cases glide cracks are observed to open and then melt away in situ. In other cases, they open and then fail catastrophically as large, full-depth avalanches. Our understanding and management of these phenomena are currently limited. It is thought that an increase in the rate of snow gliding occurs prior to full-depth avalanche activity so frequent observation of glide crack movement can provide an index of instability. During spring 2011 in Glacier National Park, Montana, USA, we began an approach to track glide crack avalanche activity using a time-lapse camera focused on a southwest facing glide crack. This crack melted in-situ without failing as a glide avalanche, while other nearby glide cracks on north through southeast aspects failed. In spring 2012, a camera was aimed at a large and productive glide crack adjacent to the Going to the Sun Road. We captured three unique glide events in the field of view. Unfortunately, all of them either failed very quickly, or during periods of obscured view, so measurements of glide rate could not be obtained. However, we compared the hourly meteorological variables during the period of glide activity to the same variables prior to glide activity. The variables air temperature, relative humidity, air pressure, incoming and reflected long wave radiation, SWE, total precipitation, and snow depth were found to be statistically different for our cases examined. We propose that these are some of the potential precursors for glide avalanche activity, but do urge caution in their use, due to the simple approach and small data set size. It is hoped that by introducing a workable method to easily record glide crack movement, combined with ongoing analysis of the associated meteorological data, we will improve our understanding of when, or if, glide avalanche activity will ensue.

  17. Avalanches and plastic flow in crystal plasticity: an overview

    Science.gov (United States)

    Papanikolaou, Stefanos; Cui, Yinan; Ghoniem, Nasr

    2018-01-01

    Crystal plasticity is mediated through dislocations, which form knotted configurations in a complex energy landscape. Once they disentangle and move, they may also be impeded by permanent obstacles with finite energy barriers or frustrating long-range interactions. The outcome of such complexity is the emergence of dislocation avalanches as the basic mechanism of plastic flow in solids at the nanoscale. While the deformation behavior of bulk materials appears smooth, a predictive model should clearly be based upon the character of these dislocation avalanches and their associated strain bursts. We provide here a comprehensive overview of experimental observations, theoretical models and computational approaches that have been developed to unravel the multiple aspects of dislocation avalanche physics and the phenomena leading to strain bursts in crystal plasticity.

  18. La carte de localisation des phénomènes d'avalanche (CLPA : enjeux et perspectives The Localization Map of Avalanche Phenomena (CLPA in French: stakes and prospects

    Directory of Open Access Journals (Sweden)

    Mylène Bonnefoy, Gilles Borrel, Didier Richard, Laurent Bélanger et Mohamed Naaim

    2010-09-01

    Full Text Available Après presque quarante ans d’existence, la carte de localisation des phénomènes d'avalanche (CLPA constitue aujourd’hui un outil incontournable pour la prise en compte du risque d’avalanche dans l’aménagement et la gestion des territoires de montagne. Pour optimiser la sécurité des zones urbanisées, ce dispositif a su se rénover par une mise à jour régulière et étendue des données et l'étude de nouvelles zones, mais aussi par une meilleure diffusion auprès des opérationnels et du public concernés. Les auteurs nous rappellent ici l'évolution du fonctionnement de la CLPA et l'intérêt d'élargir la valorisation de ses données dans de nouveaux outils scientifiques.The Localization Map of Avalanche Phenomena (CLPA in French was created in 1971 as a response to the deadly avalanche occurred in Val d’Isère (February 1970, 39 persons killed. The aim is to inventory and to memorize areas where avalanches occurred in the past in order to keep in memory precisely greatest limits of those avalanches. The CLPA was rapidly considered as an essential element for developing plan in mountain areas. After the other catastrophic avalanche, which occurred in the Montroc Village (Chamonix in February 1999, it was recommended “the mutual valuation of the EPA and the CLPA integrated into an information system containing the information on avalanches and the information on the other natural risks in mountain”. The ministry in charge of environment decided therefore to continue and to modernize the CLPA, mission that was assigned to the Cemagref with the ONF collaboration. This modernization was based on the end of maps and testimonies records digitizing, on the compilation of summary notes concerning main avalanches information in reference to a mountain massif, on the institution of a durable updating of the map and on the possibility of having all information on line on the website www.avalanches.fr. Information recorded in the

  19. THEORY AND PRACTICE OF INDIVIDUAL SNOW AVALANCHE RISK ASSESSMENT IN THE RUSSIAN ARCTIC

    Directory of Open Access Journals (Sweden)

    Aleksandr Shnyparkov

    2012-01-01

    Full Text Available In recent years, the Government of the Russian Federation considerably increased attention to the exploitation of the Russian Arctic territories. Simultaneously, the evaluation of snow avalanches danger was enhanced with the aim to decrease fatalities and reduce economic losses. However, it turned out that solely reporting the degree of avalanche danger is not sufficient. Instead, quantitative information on probabilistic parameters of natural hazards, the characteristics of their effects on the environment and possibly resulting losses is increasingly needed. Such information allows for the estimation of risk, including risk related to snow avalanches. Here, snow avalanche risk is quantified for the Khibiny Mountains, one of the most industrialized parts of the Russian Arctic: Major parts of the territory have an acceptable degree of individual snow avalanche risk (<1×10-6. The territories with an admissible (10-4–10-6 or unacceptable (>1×10-4 degree of individual snow avalanche risk (0.5 and 2% of the total area correspond to the Southeast of the Khibiny Mountains where settlements and mining industries are situated. Moreover, due to an increase in winter tourism, some traffic infrastructure is located in valleys with an admissible or unacceptable degree of individual snow avalanches risk.

  20. Avalanche outbreaks emerging in cooperative contagions

    Science.gov (United States)

    Cai, Weiran; Chen, Li; Ghanbarnejad, Fakhteh; Grassberger, Peter

    2015-11-01

    The spreading of contagions can exhibit a percolation transition, which separates transitory prevalence from outbreaks that reach a finite fraction of the population. Such transitions are commonly believed to be continuous, but empirical studies have shown more violent spreading modes when the participating agents are not limited to one type. Striking examples include the co-epidemic of the Spanish flu and pneumonia that occurred in 1918 (refs , ), and, more recently, the concurrent prevalence of HIV/AIDS and a host of diseases. It remains unclear to what extent an outbreak in the presence of interacting pathogens differs from that due to an ordinary single-agent process. Here we study a mechanistic model for understanding contagion processes involving inter-agent cooperation. Our stochastic simulations reveal the possible emergence of a massive avalanche-like outbreak right at the threshold, which is manifested as a discontinuous phase transition. Such an abrupt change arises only if the underlying network topology supports a bottleneck for cascaded mutual infections. Surprisingly, all these discontinuous transitions are accompanied by non-trivial critical behaviours, presenting a rare case of hybrid transition. The findings may imply the origin of catastrophic occurrences in many realistic systems, from co-epidemics to financial contagions.

  1. High pressure pulsed avalanche discharges: Scaling of required preionization rate for homogeneity

    International Nuclear Information System (INIS)

    Brenning, N.; Axnaes, I.; Nilsson, J.O.; Eninger, J.E.

    1994-01-01

    Homogeneous high-pressure discharges can be formed by pulsed avalanche breakdown, provided that the individual avalanche heads have diffused to a large enough radius to overlap before streamer breakdown occurs. The overlap condition can be met by using an external mechanism to preionize the neutral gas, e.g., x-rays or uv radiation. There are several scenarios, (1) to preionize the gas, and then trigger the discharge by the sudden application of an electric field, (2) to apply an overvoltage over the discharge and trigger the discharge by external ionization, or (3) to have a continuous rate of external ionization and let the E field rise, with a comparatively long time constant τ, across the breakdown value (E/n) 0 . The authors here study the last of these scenarios, which gives a very efficient use of the preionization source because the avalanche startpoint can accumulate during the pre-avalanche phase. The authors have found that the required avalanche startpoint density N st.p , defined as the density of individual single, or clusters of, electrons at the time when the electric field crosses the breakdown value, scales with pressure and rise time as N st.p ∝ p 21/4 τ -3/4 . This pressure scaling disagrees with the p 3/2 scaling found by Levatter and Lin (J. Appl. Phys. 51(1), 210), while the rise time scaling agrees satisfactorily with their results. For an E field which rises slowly across the breakdown value, the pre-avalanche accumulation of electrons must be taken into account, as well as the fact that the density n e of free electrons becomes larger than the density N st.p of independent avalanche heads: when electron impact ionization closely balances attachment, individual electrons are replaced by clusters of electrons which are too close to form individual avalanche heads

  2. Doping strategies to control A-centres in silicon: Insights from hybrid density functional theory

    KAUST Repository

    Wang, Hao; Chroneos, Alexander I.; Londos, Charalampos A.; Sgourou, Efstratia N.; Schwingenschlö gl, Udo

    2014-01-01

    Hybrid density functional theory is used to gain insights into the interaction of intrinsic vacancies (V) and oxygen-vacancy pairs (VO, known as A-centres) with the dopants (D) germanium (Ge), tin (Sn), and lead (Pb) in silicon (Si). We determine the structures as well as binding and formation energies of the DVO and DV complexes. The results are discussed in terms of the density of states and in view of the potential of isovalent doping to control A-centres in Si. We argue that doping with Sn is the most efficient isovalent doping strategy to suppress A-centres by the formation of SnVO complexes, as these are charge neutral and strongly bound. © 2014 the Owner Societies.

  3. Stretched exponentials and power laws in granular avalanching

    Science.gov (United States)

    Head, D. A.; Rodgers, G. J.

    1999-02-01

    We introduce a model for granular surface flow which exhibits both stretched exponential and power law avalanching over its parameter range. Two modes of transport are incorporated, a rolling layer consisting of individual particles and the overdamped, sliding motion of particle clusters. The crossover in behaviour observed in experiments on piles of rice is attributed to a change in the dominant mode of transport. We predict that power law avalanching will be observed whenever surface flow is dominated by clustered motion.

  4. Preparation and characterization of hybrid materials of epoxy resin type bisphenol a with silicon and titanium oxides by sol-gel process

    International Nuclear Information System (INIS)

    Carrillo C, A.; Osuna A, J. G.

    2011-01-01

    Hybrid materials were synthesized from epoxy resins as a result bisphenol type A-silicon oxide and epoxy resin bisphenol type A-titanium oxide were obtained. The synthesis was done by sol-gel process using tetraethyl orthosilicate (Teos) and titanium isopropoxide (I Ti) as inorganic precursors. The molar ratio of bisphenol A to the inorganic precursors was the studied variable. The materials were characterized by thermal analysis, infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The hybrid nature of the materials was demonstrated through thermal analysis and infrared spectroscopy. In both systems, as the amount of alkoxide increased, the bands described above were more defined. This behavior indicates the interactions between the resin and the alkoxides. Hybrids with Teos showed a smoother and homogeneous surface in its entirety, without irregularities. Hybrids with titanium isopropoxide had low roughness. Both Teos and I Ti hybrids showed a decrease on the atomic weight percentage of carbon due to a slight reduction of the organic part on the surface. (Author)

  5. Preparation and characterization of hybrid materials of epoxy resin type bisphenol a with silicon and titanium oxides by sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo C, A.; Osuna A, J. G., E-mail: acc.carrillo@gmail.com [Universidad Autonoma de Coahuila, Facultad de Ciencias Quimicas, Blvd. Venustiano Carranza y Jose Cardenas Valdes, 25000 Saltillo, Coahuila (Mexico)

    2011-07-01

    Hybrid materials were synthesized from epoxy resins as a result bisphenol type A-silicon oxide and epoxy resin bisphenol type A-titanium oxide were obtained. The synthesis was done by sol-gel process using tetraethyl orthosilicate (Teos) and titanium isopropoxide (I Ti) as inorganic precursors. The molar ratio of bisphenol A to the inorganic precursors was the studied variable. The materials were characterized by thermal analysis, infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The hybrid nature of the materials was demonstrated through thermal analysis and infrared spectroscopy. In both systems, as the amount of alkoxide increased, the bands described above were more defined. This behavior indicates the interactions between the resin and the alkoxides. Hybrids with Teos showed a smoother and homogeneous surface in its entirety, without irregularities. Hybrids with titanium isopropoxide had low roughness. Both Teos and I Ti hybrids showed a decrease on the atomic weight percentage of carbon due to a slight reduction of the organic part on the surface. (Author)

  6. Regional snow-avalanche detection using object-based image analysis of near-infrared aerial imagery

    Directory of Open Access Journals (Sweden)

    K. Korzeniowska

    2017-10-01

    Full Text Available Snow avalanches are destructive mass movements in mountain regions that continue to claim lives and cause infrastructural damage and traffic detours. Given that avalanches often occur in remote and poorly accessible steep terrain, their detection and mapping is extensive and time consuming. Nonetheless, systematic avalanche detection over large areas could help to generate more complete and up-to-date inventories (cadastres necessary for validating avalanche forecasting and hazard mapping. In this study, we focused on automatically detecting avalanches and classifying them into release zones, tracks, and run-out zones based on 0.25 m near-infrared (NIR ADS80-SH92 aerial imagery using an object-based image analysis (OBIA approach. Our algorithm takes into account the brightness, the normalised difference vegetation index (NDVI, the normalised difference water index (NDWI, and its standard deviation (SDNDWI to distinguish avalanches from other land-surface elements. Using normalised parameters allows applying this method across large areas. We trained the method by analysing the properties of snow avalanches at three 4 km−2 areas near Davos, Switzerland. We compared the results with manually mapped avalanche polygons and obtained a user's accuracy of > 0.9 and a Cohen's kappa of 0.79–0.85. Testing the method for a larger area of 226.3 km−2, we estimated producer's and user's accuracies of 0.61 and 0.78, respectively, with a Cohen's kappa of 0.67. Detected avalanches that overlapped with reference data by > 80 % occurred randomly throughout the testing area, showing that our method avoids overfitting. Our method has potential for large-scale avalanche mapping, although further investigations into other regions are desirable to verify the robustness of our selected thresholds and the transferability of the method.

  7. Emplacement of rock avalanche material across saturated sediments, Southern Alp, New Zealand

    Science.gov (United States)

    Dufresne, A.; Davies, T. R.; McSaveney, M. J.

    2012-04-01

    The spreading of material from slope failure events is not only influenced by the volume and nature of the source material and the local topography, but also by the materials encountered in the runout path. In this study, evidence of complex interactions between rock avalanche and sedimentary runout path material were investigated at the 45 x 106 m3 long-runout (L: 4.8 km) Round Top rock avalanche deposit, New Zealand. It was sourced within myolinitic schists of the active strike-slip Alpine Fault. The narrow and in-failure-direction elongate source scarp is deep-seated, indicating slope failure was triggered by strong seismic activity. The most striking morphological deposit features are longitudinal ridges aligned radially to source. Trenching and geophysical surveys show bulldozed and sheared substrate material at ridge termini and laterally displaced sedimentary strata. The substrate failed at a minimum depth of 3 m indicating a ploughing motion of the ridges into the saturated material below. Internal avalanche compression features suggest deceleration behind the bulldozed substrate obstacle. Contorted fabric in material ahead of the ridge document substrate disruption by the overriding avalanche material deposited as the next down-motion hummock. Comparison with rock avalanches of similar volume but different emplacement environments places Round Top between longer runout avalanches emplaced over e.g. playa lake sediments and those with shorter travel distances, whose runout was apparently retarded by topographic obstacles or that entrained high-friction debris. These empirical observations indicate the importance of runout path materials on tentative trends in rock avalanche emplacement dynamics and runout behaviour.

  8. Application of avalanche photodiodes for the measurement of actinides by alpha liquid scintillation counting

    International Nuclear Information System (INIS)

    Reboli, A.

    2005-10-01

    Alpha emitters analysis using liquid scintillation spectroscopy is often used when sensitivity and fast samples preparation are the important points. A more extensive use of this technique is until now limited by its poor resolution compared to alpha particle spectroscopy with semiconductor detectors. To improve the resolution and thus promote this method for the measurement of actinides in environment, we have tested silicon avalanche photodiodes (APD) as new detectors for scintillation photons. The set-up consists of a large area avalanche photodiode (16 mm diameter) coupled to a thin vial containing alpha-emitters within a liquid scintillation cocktail. After optimization of several parameters like bias voltage, temperature, counting geometry and composition of the scintillating cocktail, energy resolutions have been found to be better than those obtained with standard photomultiplier tubes (PMT): 5% (200 keV FWHM) for 232 Th and 4.2% (240 keV FWHM) for 236 Pu. Our results show that the improvement is due to less fluctuations associated with light collection since the spatial response of APDs is more uniform than that of PMTs. The expected gain on quantum efficiency (80% for APDs instead of 25% for PMTs) is nullified by a corresponding increase on electronic noise and excess noise factor. Significant better results are foreseen by using green scintillators (450 - 550 nm wavelengths region) with larger Stokes-shift and blue-enhanced APDs which reach their maximum quantum efficiency in this region. (author)

  9. A convenient way of manufacturing silicon nanotubes on a silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

    2016-07-01

    A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

  10. Geneva University - Silicon photomultiplier : features and applications

    CERN Multimedia

    Université de Genève

    2012-01-01

    GENEVA UNIVERSITY École de physique Département de physique nucléaire et corspusculaire 24, quai Ernest-Ansermet 1211 Genève 4 Tél.: (022) 379 62 73 Fax: (022) 379 69 92   Wednesday 7 March 2012 SEMINAIRE DE PHYSIQUE CORPUSCULAIRE 11.15 a.m. - Science II, Auditoire 1S081, 30, quai Ernest-Ansermet, 1211 Genève 4 SILICON PHOTOMULTIPLIER : FEATURES AND APPLICATIONS Dr Giulio SARACINO   University of Naples, Federico II   Silicon photomultipliers were developed about ten years ago and their use, unlike traditional photomultiplier tubes, is increasing more and more. They are an evolution of the avalanche photodiode working in Geiger mode regime. Hundreds of such diodes are connected in parallel, allowing single photon response, high detection efficiency, high gain at low bias voltage and very good timing performance. In spite of their Geiger regime, they can be considered linear devices, until the number of photon...

  11. Nanomechanics of slip avalanches in amorphous plasticity

    Science.gov (United States)

    Cao, Penghui; Dahmen, Karin A.; Kushima, Akihiro; Wright, Wendelin J.; Park, Harold S.; Short, Michael P.; Yip, Sidney

    2018-05-01

    Discrete stress relaxations (slip avalanches) in a model metallic glass under uniaxial compression are studied using a metadynamics algorithm for molecular simulation at experimental strain rates. The onset of yielding is observed at the first major stress drop, accompanied, upon analysis, by the formation of a single localized shear band region spanning the entire system. During the elastic response prior to yielding, low concentrations of shear transformation deformation events appear intermittently and spatially uncorrelated. During serrated flow following yielding, small stress drops occur interspersed between large drops. The simulation results point to a threshold value of stress dissipation as a characteristic feature separating major and minor avalanches consistent with mean-field modeling analysis and mechanical testing experiments. We further interpret this behavior to be a consequence of a nonlinear interplay of two prevailing mechanisms of amorphous plasticity, thermally activated atomic diffusion and stress-induced shear transformations, originally proposed by Spaepen and Argon, respectively. Probing the atomistic processes at widely separate strain rates gives insight to different modes of shear band formation: percolation of shear transformations versus crack-like propagation. Additionally a focus on crossover avalanche size has implications for nanomechanical modeling of spatially and temporally heterogeneous dynamics.

  12. Thermal simulations of the new design for the BELLE silicon vertex detector

    International Nuclear Information System (INIS)

    Dragic, J.

    2000-01-01

    Full text: The experienced imperfections of the BELLE silicon vertex detector, SVD1 motioned the design of a new detector, SVD2, which targets on improving the main weaknesses encountered in the old design. In this report we focus on tile thermal aspects of the SVD2 ladder, whereby sufficient cooling of the detector is necessary in order to minimise the detector leakage currents. It is estimated that reducing the temperature of the silicon detector from 25 deg C to 15 deg C would result in a 50% reduction in leak current. Further, cooling the detector would help minimize mechanical stresses from the thermal cycling. Our task is to ensure that the heat generated by the readout chips is conducted down the SVD hybrid unit effectively, such that the chip and the hybrid temperature does not overbear the SVD silicon sensor temperature. We considered the performance of two materials to act as a heat spreading plate which is glued between the two hybrids in order to improve the heat conductivity of the hybrid unit, namely Copper and Thermal Pyrolytic Graphite (TPG). The effects of other ladder components were also considered in order to enhance the cooling of the silicon detectors. Finite element analysis with ANSYS software was used to simulate the thermal conditions of the SVD2 hybrid unit, in accordance with the baseline design for the mechanical structure of the ladder. It was found that Cu was a preferred material as it achieved equivalent silicon sensor cooling (3.6 deg C above cooling point), while its mechanical properties rendered it a lot more practical. Suppressing, the thermal path via a rib support block, by increasing its thermal resistivity, as well as increasing thermal conductivity of the ribs in the hybrid region, were deemed essential in the effective cooling of the silicon sensors

  13. Hybrid matrices of TiO2 and TiO2–Ag nanofibers with silicone for high water flux photocatalytic degradation of dairy effluent

    DEFF Research Database (Denmark)

    Kanjwal, Muzafar Ahmad; Alm, Martin; Thomsen, Peter

    2016-01-01

    TiO2 and TiO2–Ag nanofibers were produced by electrospinning technique and surface coated on silicone elastomer (diameter: 10.0 mm; thickness: 2.0 mm) by dipcoating method. These coated hybrid nanoporous matrices were characterized by various morphological and physicochemical techniques (like SEM...

  14. Theory of suppressing avalanche process of carrier in short pulse laser irradiated dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Deng, H. X., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu; Zu, X. T., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu; Xiang, X. [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, W. G.; Yuan, X. D. [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Sun, K., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu [Department of Materials Engineering and Sciences, University of Michigan, 413B Space Research Building, Ann Arbor, Michigan 48109-2143 (United States); Gao, F. [Pacific Northwest National Laboratory, P. O. Box 999, Richland, Washington 99352 (United States)

    2014-05-28

    A theory for controlling avalanche process of carrier during short pulse laser irradiation is proposed. We show that avalanche process of conduction band electrons (CBEs) is determined by the occupation number of phonons in dielectrics. The theory provides a way to suppress avalanche process and a direct judgment for the contribution of avalanche process and photon ionization process to the generation of CBEs. The obtained temperature dependent rate equation shows that the laser induced damage threshold of dielectrics, e.g., fused silica, increase nonlinearly with the decreases of temperature. Present theory predicts a new approach to improve the laser induced damage threshold of dielectrics.

  15. The December 2008 Crammont rock avalanche, Mont Blanc massif area, Italy

    Directory of Open Access Journals (Sweden)

    P. Deline

    2011-12-01

    Full Text Available We describe a 0.5 Mm3 rock avalanche that occurred in 2008 in the western Alps and discuss possible roles of controlling factors in the context of current climate change. The source is located between 2410 m and 2653 m a.s.l. on Mont Crammont and is controlled by a densely fractured rock structure. The main part of the collapsed rock mass deposited at the foot of the rock wall. A smaller part travelled much farther, reaching horizontal and vertical travel distances of 3050 m and 1560 m, respectively. The mobility of the rock mass was enhanced by channelization and snow. The rock-avalanche volume was calculated by comparison of pre- and post-event DTMs, and geomechanical characterization of the detachment zone was extracted from LiDAR point cloud processing. Back analysis of the rock-avalanche runout suggests a two stage event.

    There was no previous rock avalanche activity from the Mont Crammont ridge during the Holocene. The 2008 rock avalanche may have resulted from permafrost degradation in the steep rock wall, as suggested by seepage water in the scar after the collapse in spite of negative air temperatures, and modelling of rock temperatures that indicate warm permafrost (T > −2 °C.

  16. Avalanches in functional materials and geophysics

    CERN Document Server

    Saxena, Avadh; Planes, Antoni

    2017-01-01

    This book provides the state-of-the art of the present understanding of avalanche phenomena in both functional materials and geophysics. The main emphasis of the book is analyzing these apparently different problems within the common perspective of out-of-equilibrium phenomena displaying spatial and temporal complexity that occur in a broad range of scales. Many systems, when subjected to an external force, respond intermittently in the form of avalanches that often span over a wide range of sizes, energies and durations. This is often related to a class of critical behavior characterized by the absence of characteristic scales. Typical examples are magnetization processes, plastic deformation and failure occuring in functional materials. These phenomena share many similarities with seismicity arising from the earth crust failure due to stresses that originate from plate tectonics.

  17. Rockslide-debris avalanche of May 18, 1980, Mount St. Helens Volcano, Washington

    Science.gov (United States)

    Glicken, Harry

    1996-01-01

    This report provides a detailed picture of the rockslide-debris avalanche of the May 18, 1980, eruption of Mount St. Helens volcano. It provides a characterization of the deposit, a reinterpretation of the details of the first minutes of the eruption of May 18, and insight into the transport mechanism of the mass movement. Details of the rockslide event, as revealed by eyewitness photographs, are correlated with features of the deposit. The photographs show three slide blocks in the rockslide movement. Slide block I was triggered by a magnitude 5.1 earthquake at 8:32 a.m. Pacific Daylight Time (P.D.T.). An exploding cryptodome burst through slide block II to produce the 'blast surge.' Slide block III consisted of many discrete failures that were carried out in continuing pyroclastic currents generated from the exploding cryptodome. The cryptodome continued to depressurize after slide block III, producing a blast deposit that rests on top of the debris-avalanche deposit. The hummocky 2.5 cubic kilometer debris-avalanche deposit consists of block facies (pieces of the pre-eruption Mount St. Helens transported relatively intact) and matrix facies (a mixture of rocks from the old mountain and cryptodome dacite). Block facies is divided into five lithologic units. Matrix facies was derived from the explosively generated current of slide block III as well as from disaggregation and mixing of debris-avalanche blocks. The mean density of the old cone was measured to be abut 20 percent greater than the mean density of the avalanche deposit. Density in the deposit does not decrease with distance which suggests that debris-avalanche blocks were dilated at the mountain, rather than during transport. Various grain-size parameters that show that clast size converges about a mean with distance suggest mixing during transport. The debris-avalanche flow can be considered a grain flow, where particles -- either debris-avalanche blocks or the clasts within the blocks -- collided and

  18. Statistical analysis and trends of wet snow avalanches in the French Alps over the period 1959-2010

    Science.gov (United States)

    Naaim, Mohamed

    2017-04-01

    Since an avalanche contains a significant proportion of wet snow, its characteristics and its behavior change significantly (heterogeneous and polydisperse). Even if on a steep given slope, wet snow avalanches are slow. They can flow over gentle slopes and reach the same extensions as dry avalanches. To highlight the link between climate warming and the proliferation of wet snow avlanches, we crossed two well-documented avalanche databases: the permanent avalanche chronicle (EPA) and the meteorological re-analyzes. For each avalanche referenced in EPA, a moisture index I is buit. It represents the ratio of the thickness of the wet snow layer to the total snow thickness, at the date of the avalanche on the concerned massif at 2400 m.a.s.l. The daily and annual proportion of avalanches exceeding a given threshold of I are calculated for each massif of the French alps. The statistical distribution of wet avalanches per massif is calculated over the period 1959-2009. The statistical quantities are also calculated over two successive periods of the same duration 1959-1984 and 1984-2009, and the annual evolution of the proportion of wet avalanches is studied using time-series tools to detect potential rupture or trends. This study showed that about 77% of avalanches on the French alpine massif mobilize dry snow. The probability of having an avalanche of a moisture index greater than 10 % in a given year is 0.2. This value varies from one massif to another. The analysis between the two successive periods showed a significant growth of wet avalanches on 20 massifs and a decrease on 3 massifs. The study of time-series confirmed these trends, which are of the inter-annual variability level.

  19. Thermal resistance analysis and optimization of photovoltaic-thermoelectric hybrid system

    International Nuclear Information System (INIS)

    Yin, Ershuai; Li, Qiang; Xuan, Yimin

    2017-01-01

    Highlights: • A detailed thermal resistance analysis of the PV-TE hybrid system is proposed. • c-Si PV and p-Si PV cells are proved to be inapplicable for the PV-TE hybrid system. • Some criteria for selecting coupling devices and optimal design are obtained. • A detailed process of designing the practical PV-TE hybrid system is provided. - Abstract: The thermal resistance theory is introduced into the theoretical model of the photovoltaic-thermoelectric (PV-TE) hybrid system. A detailed thermal resistance analysis is proposed to optimize the design of the coupled system in terms of optimal total conversion efficiency. Systems using four types of photovoltaic cells are investigated, including monocrystalline silicon photovoltaic cell, polycrystalline silicon photovoltaic cell, amorphous silicon photovoltaic cell and polymer photovoltaic cell. Three cooling methods, including natural cooling, forced air cooling and water cooling, are compared, which demonstrates a significant superiority of water cooling for the concentrating photovoltaic-thermoelectric hybrid system. Influences of the optical concentrating ratio and velocity of water are studied together and the optimal values are revealed. The impacts of the thermal resistances of the contact surface, TE generator and the upper heat loss thermal resistance on the property of the coupled system are investigated, respectively. The results indicate that amorphous silicon PV cell and polymer PV cell are more appropriate for the concentrating hybrid system. Enlarging the thermal resistance of the thermoelectric generator can significantly increase the performance of the coupled system using amorphous silicon PV cell or polymer PV cell.

  20. Lumped transmission line avalanche pulser

    Science.gov (United States)

    Booth, Rex

    1995-01-01

    A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse.

  1. Information processing occurs via critical avalanches in a model of the primary visual cortex

    International Nuclear Information System (INIS)

    Bortolotto, G. S.; Girardi-Schappo, M.; Gonsalves, J. J.; Tragtenberg, M. H. R.; Pinto, L. T.

    2016-01-01

    We study a new biologically motivated model for the Macaque monkey primary visual cortex which presents power-law avalanches after a visual stimulus. The signal propagates through all the layers of the model via avalanches that depend on network structure and synaptic parameter. We identify four different avalanche profiles as a function of the excitatory postsynaptic potential. The avalanches follow a size-duration scaling relation and present critical exponents that match experiments. The structure of the network gives rise to a regime of two characteristic spatial scales, one of which vanishes in the thermodynamic limit. (paper)

  2. Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides.

    Science.gov (United States)

    Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A; Olsson, Roy H; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T

    2013-01-01

    Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic-phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized-with over 1,000 times larger nonlinearity than reported in previous systems-yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip.

  3. Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides

    Science.gov (United States)

    Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A.; Olsson, Roy H.; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T.

    2013-01-01

    Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic–phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized—with over 1,000 times larger nonlinearity than reported in previous systems—yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip. PMID:23739586

  4. Avalanches in the Bean critical-state model

    International Nuclear Information System (INIS)

    Barford, W.

    1997-01-01

    A macroscopic equation of motion for the flux density in dirty type-II superconductors is introduced. The flux density is subject to various types of spatially varying pinning force. When there is no stick-slip dynamics, i.e., when the static pinning force equals the dynamic pinning force, it is shown that in both one and two dimensions an increase in the surface magnetic field leads to an overall height change and hence to a change in magnetization equal to the change in the surface magnetic field. More interesting behavior occurs on introducing stick-slip dynamics, i.e., when the static pinning force exceeds the dynamic pinning force. In this limit a distribution of avalanche sizes over four orders of magnitude is found for a 100x100 lattice. Apart from the anomalous behavior at large sizes, this is shown to fit a distribution of the form P(s)∼s -ν exp(-s/α), where s is the avalanche size. The anomalous behavior for large sizes corresponds to avalanches which involve most of the lattice and, hence, cause the flux to open-quotes slide over the edge,close quotes as detected by a change in the edge magnetization. copyright 1997 The American Physical Society

  5. Preparation And Characterization Of Silicon Carbide Foam By Using In-Situ Generated Polyurethane Foam

    Directory of Open Access Journals (Sweden)

    Shalini Saxena

    2015-08-01

    Full Text Available Abstract The open cell silicon carbide SiC foam was prepared using highly crosslinked hybrid organic- inorganic polymer resin matrix. As inorganic polymer polycarbosilane was taken and organic resin was taken as a mixture of epoxy resin and diisocyanates. The resultant highly crosslinked hybrid resin matrix on heating and subsequently on pyrolysis yielded open cell silicon carbide foam. The hybrid resin matrix was characterized by Fourier transform Infrared Spectroscopy FT-IR and thermal properties i.e. Thermogravimetric analysis TGA amp Differential Scanning Calorimetry DSC were also studied. The morphological studies of silicon carbide ceramic foam were carried out using X-ray Spectroscopy XRD amp Scanning Electron Microscopy SEM.

  6. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  7. Investigation of multi-state charge-storage properties of redox-active organic molecules in silicon-molecular hybrid devices for DRAM and Flash applications

    Science.gov (United States)

    Gowda, Srivardhan Shivappa

    Molecular electronics has recently spawned a considerable amount of interest with several molecules possessing charge-conduction and charge-storage properties proposed for use in electronic devices. Hybrid silicon-molecular technology has the promise of augmenting the current silicon technology and provide for a transitional path to future molecule-only technology. The focus of this dissertation work has been on developing a class of hybrid silicon-molecular electronic devices for DRAM and Flash memory applications utilizing redox-active molecules. This work exploits the ability of molecules to store charges with single-electron precision at room temperature. The hybrid devices are fabricated by forming self-assembled monolayers of redox-active molecules on Si and oxide (SiO2 and HfO2) surfaces via formation of covalent linkages. The molecules possess discrete quantum states from which electrons can tunnel to the Si substrate at discrete applied voltages (oxidation process, cell write), leaving behind a positively charged layer of molecules. The reduction (erase) process, which is the process of electrons tunneling back from Si to the molecules, neutralizes the positively charged molecular monolayer. Hybrid silicon-molecular capacitor test structures were electrically characterized with an electrolyte gate using cyclic voltammetry (CyV) and impedance spectroscopy (CV) techniques. The redox voltages, kinetics (write/erase speeds) and charge-retention characteristics were found to be strongly dependent on the Si doping type and densities, and ambient light. It was also determined that the redox energy states in the molecules communicate with the valence band of the Si substrate. This allows tuning of write and read states by modulating minority carriers in n- and p-Si substrates. Ultra-thin dielectric tunnel barriers (SiO2, HfO2) were placed between the molecules and the Si substrate to augment charge-retention for Flash memory applications. The redox response was

  8. Snow-avalanche impact craters in southern Norway: Their morphology and dynamics compared with small terrestrial meteorite craters

    Science.gov (United States)

    Matthews, John A.; Owen, Geraint; McEwen, Lindsey J.; Shakesby, Richard A.; Hill, Jennifer L.; Vater, Amber E.; Ratcliffe, Anna C.

    2017-11-01

    This regional inventory and study of a globally uncommon landform type reveals similarities in form and process between craters produced by snow-avalanche and meteorite impacts. Fifty-two snow-avalanche impact craters (mean diameter 85 m, range 10-185 m) were investigated through field research, aerial photographic interpretation and analysis of topographic maps. The craters are sited on valley bottoms or lake margins at the foot of steep avalanche paths (α = 28-59°), generally with an easterly aspect, where the slope of the final 200 m of the avalanche path (β) typically exceeds 15°. Crater diameter correlates with the area of the avalanche start zone, which points to snow-avalanche volume as the main control on crater size. Proximal erosional scars ('blast zones') up to 40 m high indicate up-range ejection of material from the crater, assisted by air-launch of the avalanches and impulse waves generated by their impact into water-filled craters. Formation of distal mounds up to 12 m high of variable shape is favoured by more dispersed down-range deposition of ejecta. Key to the development of snow-avalanche impact craters is the repeated occurrence of topographically-focused snow avalanches that impact with a steep angle on unconsolidated sediment. Secondary craters or pits, a few metres in diameter, are attributed to the impact of individual boulders or smaller bodies of snow ejected from the main avalanche. The process of crater formation by low-density, low-velocity, large-volume snow flows occurring as multiple events is broadly comparable with cratering by single-event, high-density, high-velocity, small-volume projectiles such as small meteorites. Simple comparative modelling of snow-avalanche events associated with a crater of average size (diameter 85 m) indicates that the kinetic energy of a single snow-avalanche impact event is two orders of magnitude less than that of a single meteorite-impact event capable of producing a crater of similar size

  9. Design and fabrication of an optimum peripheral region for low gain avalanche detectors

    International Nuclear Information System (INIS)

    Fernández-Martínez, Pablo; Flores, D.; Hidalgo, S.; Greco, V.; Merlos, A.; Pellegrini, G.; Quirion, D.

    2016-01-01

    Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. This work deals with the critical technological aspects required to optimize the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral region improvement are also provided.

  10. Design and fabrication of an optimum peripheral region for low gain avalanche detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fernández-Martínez, Pablo; Flores, D., E-mail: david.flores@imb-cnm.csic.es; Hidalgo, S.; Greco, V.; Merlos, A.; Pellegrini, G.; Quirion, D.

    2016-06-11

    Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. This work deals with the critical technological aspects required to optimize the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral region improvement are also provided.

  11. Validating numerical simulations of snow avalanches using dendrochronology: the Cerro Ventana event in Northern Patagonia, Argentina

    Directory of Open Access Journals (Sweden)

    A. Casteller

    2008-05-01

    Full Text Available The damage caused by snow avalanches to property and human lives is underestimated in many regions around the world, especially where this natural hazard remains poorly documented. One such region is the Argentinean Andes, where numerous settlements are threatened almost every winter by large snow avalanches. On 1 September 2002, the largest tragedy in the history of Argentinean mountaineering took place at Cerro Ventana, Northern Patagonia: nine persons were killed and seven others injured by a snow avalanche. In this paper, we combine both numerical modeling and dendrochronological investigations to reconstruct this event. Using information released by local governmental authorities and compiled in the field, the avalanche event was numerically simulated using the avalanche dynamics programs AVAL-1D and RAMMS. Avalanche characteristics, such as extent and date were determined using dendrochronological techniques. Model simulation results were compared with documentary and tree-ring evidences for the 2002 event. Our results show a good agreement between the simulated projection of the avalanche and its reconstructed extent using tree-ring records. Differences between the observed and the simulated avalanche, principally related to the snow height deposition in the run-out zone, are mostly attributed to the low resolution of the digital elevation model used to represent the valley topography. The main contributions of this study are (1 to provide the first calibration of numerical avalanche models for the Patagonian Andes and (2 to highlight the potential of Nothofagus pumilio tree-ring records to reconstruct past snow-avalanche events in time and space. Future research should focus on testing this combined approach in other forested regions of the Andes.

  12. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  13. Massive Formation of Equiaxed Crystals by Avalanches of Mushy Zone Segments

    Science.gov (United States)

    Ludwig, A.; Stefan-Kharicha, M.; Kharicha, A.; Wu, M.

    2017-06-01

    It is well known that the growth and motion of equiaxed crystals govern important microstructural features, especially in larger castings such as heavy ingots. To determine the origin of the equiaxed crystals, heterogeneous nucleation, and/or fragmentation of dendrite arms from columnar regions are often discussed. In the present study, we demonstrate that under certain conditions relatively large areas of mushy regions slide downward and form spectacular crystal avalanches. These avalanches crumble into thousands of dendritic fragments, whereby the larger fragments immediately sediment and the smaller proceed to behave as equiaxed crystals. Traces of such crystal avalanches can be seen by conspicuous equiaxed layers in the lower part of the casting. From the arguments in the discussion, it is believed that such a phenomenon may occur in alloys which reveal an upward solutal buoyancy in the interdendritic mush. This would include certain steels and other alloys such as Cu-Al, Pb-Sn, or Ni-Al-alloys. Moreover, the occurrence of crystal avalanches contribute to the formation of V-segregations.

  14. A concept for optimizing avalanche rescue strategies using a Monte Carlo simulation approach.

    Directory of Open Access Journals (Sweden)

    Ingrid Reiweger

    Full Text Available Recent technical and strategical developments have increased the survival chances for avalanche victims. Still hundreds of people, primarily recreationists, get caught and buried by snow avalanches every year. About 100 die each year in the European Alps-and many more worldwide. Refining concepts for avalanche rescue means to optimize the procedures such that the survival chances are maximized in order to save the greatest possible number of lives. Avalanche rescue includes several parameters related to terrain, natural hazards, the people affected by the event, the rescuers, and the applied search and rescue equipment. The numerous parameters and their complex interaction make it unrealistic for a rescuer to take, in the urgency of the situation, the best possible decisions without clearly structured, easily applicable decision support systems. In order to analyse which measures lead to the best possible survival outcome in the complex environment of an avalanche accident, we present a numerical approach, namely a Monte Carlo simulation. We demonstrate the application of Monte Carlo simulations for two typical, yet tricky questions in avalanche rescue: (1 calculating how deep one should probe in the first passage of a probe line depending on search area, and (2 determining for how long resuscitation should be performed on a specific patient while others are still buried. In both cases, we demonstrate that optimized strategies can be calculated with the Monte Carlo method, provided that the necessary input data are available. Our Monte Carlo simulations also suggest that with a strict focus on the "greatest good for the greatest number", today's rescue strategies can be further optimized in the best interest of patients involved in an avalanche accident.

  15. Investigation of avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO{sub 4} crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO{sub 4} crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm{sup 2}. We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab.

  16. Investigation of avalanche photodiodes

    International Nuclear Information System (INIS)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO 4 crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO 4 crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm 2 . We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab

  17. Modeling the influence of snow cover temperature and water content on wet-snow avalanche runout

    Directory of Open Access Journals (Sweden)

    C. Vera Valero

    2018-03-01

    Full Text Available Snow avalanche motion is strongly dependent on the temperature and water content of the snow cover. In this paper we use a snow cover model, driven by measured meteorological data, to set the initial and boundary conditions for wet-snow avalanche calculations. The snow cover model provides estimates of snow height, density, temperature and liquid water content. This information is used to prescribe fracture heights and erosion heights for an avalanche dynamics model. We compare simulated runout distances with observed avalanche deposition fields using a contingency table analysis. Our analysis of the simulations reveals a large variability in predicted runout for tracks with flat terraces and gradual slope transitions to the runout zone. Reliable estimates of avalanche mass (height and density in the release and erosion zones are identified to be more important than an exact specification of temperature and water content. For wet-snow avalanches, this implies that the layers where meltwater accumulates in the release zone must be identified accurately as this defines the height of the fracture slab and therefore the release mass. Advanced thermomechanical models appear to be better suited to simulate wet-snow avalanche inundation areas than existing guideline procedures if and only if accurate snow cover information is available.

  18. Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

    Science.gov (United States)

    Di Bartolomeo, Antonio; Luongo, Giuseppe; Giubileo, Filippo; Funicello, Nicola; Niu, Gang; Schroeder, Thomas; Lisker, Marco; Lupina, Grzegorz

    2017-06-01

    We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 \\text{A} {{\\text{W}}-1} and a normalized detectivity higher than 3.5× {{10}12} \\text{cm} \\text{H}{{\\text{z}}1/2} {{\\text{W}}-1} in the visible range. It exhibits a photocurrent exceeding the forward current because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. We perform extensive I-V and C-V characterization at different temperatures and we measure a zero-bias Schottky barrier height of 0.52 eV at room temperature, as well as an effective Richardson constant A **  =  4× {{10}-5} \\text{A} \\text{c}{{\\text{m}}-2} {{\\text{K}}-2} and an ideality factor n≈ 3.6 , explained by a thin (<1 nm) oxide layer at the Gr/Si interface.

  19. High-Gain Avalanche Rushing amorphous Photoconductor (HARP) detector

    Energy Technology Data Exchange (ETDEWEB)

    Tanioka, K. [NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510 (Japan)], E-mail: tanioka.k-jg@nhk.or.jp

    2009-09-01

    We have been studying a very sensitive image sensor since the early 1980s. In 1985, the author found for the first time that an experimental pickup tube with an amorphous selenium photoconductive target exhibits high sensitivity with excellent picture quality because of a continuous and stable avalanche multiplication phenomenon. We named the pickup tube with an amorphous photoconductive layer operating in the avalanche-mode 'HARP': High-gain Avalanche Rushing amorphous Photoconductor. A color camera equipped with the HARP pickup tubes has a maximum sensitivity of 11 lx at F8. This means that the HARP camera is about 100 times as sensitive as that of CCD camera for broadcasting. This ultrahigh-sensitivity HARP pickup tube is a powerful tool for reporting breaking news at night and other low-light conditions, the production of scientific programs, and numerous other applications, including medical diagnoses, biotech research, and nighttime surveillance. In addition, since the HARP target can convert X-rays into electrons directly, it should be possible to exploit this capability to produce X-ray imaging devices with unparalleled levels of resolution and sensitivity.

  20. Avalanche transistor pulser for fast-gated operation of micro-channel plate image-intensifiers

    International Nuclear Information System (INIS)

    Lundy, A.; Parker, J.R.; Lunsford, J.S.; Martin, A.D.

    1977-01-01

    Transistors operated in the avalanche mode are employed to generate a 1000 volt 10 to 30 nsec wide pulse with less than 4 nsec rise and fall times. This pulse is resistively attenuated to approximately equal to 270 volts and drives the image intensifier tube which is a load of approximately equal to 200 pf. To reduce stray inductance and capacitance, transistor chips were assembled on a thick-film hybrid substrate. Circuit parameters, operating conditions, and coupling to the microchannel plate image-intensifier (MCPI 2 ) tube are described. To provide dc operating voltages and control of transient voltages on the MCPI 2 tube a resistance-capacitance network has been developed which (a) places the MCPI 2 output phosphor at ground, (b) provides programmable gains in ''f-stop'' steps, and (c) minimizes voltage transients on the MCPI 2 tube

  1. High gain multigap avalanche detectors for Cerenkov ring imaging

    Energy Technology Data Exchange (ETDEWEB)

    Gilmore, R.S.; Lavender, W.M.; Leith, D.W.G.S.; Williams, S.H.

    1980-10-01

    We report on a continuing study of multigap parallel plate avalanche chambers, primarily as photoelectron detectors for use with Cerenkov ring imaging counters. By suitable control of the fields in successive gaps and by introducing screens to reduce photon feedback to the cathode the gain many be increased considerably. We have obtained gains in excess of 6 x 10/sup 7/ for photoelectrons with a good pulse height spectrum and expect to increase this further. We discuss the use of resistive anodes to give avalanche positions in two dimensions by charge division.

  2. Hybrid Message-Embedded Cipher Using Logistic Map

    OpenAIRE

    Mishra, Mina; Mankar, V. H.

    2012-01-01

    The proposed hybrid message embedded scheme consists of hill cipher combined with message embedded chaotic scheme. Message-embedded scheme using non-linear feedback shift register as non-linear function and 1-D logistic map as chaotic map is modified, analyzed and tested for avalanche property and strength against known plaintext attack and brute-force attack. Parameter of logistic map acts as a secret key. As we know that the minimum key space to resist brute-force attack is 2100, and it is ...

  3. Porous silicon photoluminescence modification by colloidal gold nanoparticles: Plasmonic, surface and porosity roles

    International Nuclear Information System (INIS)

    Mora, M.B. de la; Bornacelli, J.; Nava, R.; Zanella, R.; Reyes-Esqueda, J.A.

    2014-01-01

    Metal nanoparticles on semiconductors are of interest because of the tunable effect of the surface plasmon resonance on the physical properties of the semiconductor. In this work, colloidal gold nanoparticles obtained by two different methods, with an average size of 6.1±2.0 nm and 5.0±2.0 nm, were added to luminescent porous silicon by drop casting. The gold nanoparticles interact with porous silicon by modifying its optical properties such as photoluminescence. That being said, plasmon effects are not the only to be taken into account; as shown in this work, surface chemical modification and porosity also play a key role in the final performance of photoluminescence of a porous silicon–gold nanoparticle hybrid system. -- Highlights: • A hybrid material consisting of porous silicon and gold nanoparticles was fabricated. • Porous silicon/gold nanoparticle hybrid material was made by drop casting. • Influence of plasmonics, surface chemical modification and porosity on the optical behavior of our material was analyzed. • Porosity is proposed as a parameter control to obtain the best effects on luminescence of the hybrid plasmonic material

  4. Porous silicon photoluminescence modification by colloidal gold nanoparticles: Plasmonic, surface and porosity roles

    Energy Technology Data Exchange (ETDEWEB)

    Mora, M.B. de la; Bornacelli, J. [Instituto de Física, Universidad Nacional Autónoma de México, México D.F. 04510 (Mexico); Nava, R. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico); Zanella, R. [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, México D.F. 04510 (Mexico); Reyes-Esqueda, J.A., E-mail: betarina@gmail.com [Instituto de Física, Universidad Nacional Autónoma de México, México D.F. 04510 (Mexico)

    2014-02-15

    Metal nanoparticles on semiconductors are of interest because of the tunable effect of the surface plasmon resonance on the physical properties of the semiconductor. In this work, colloidal gold nanoparticles obtained by two different methods, with an average size of 6.1±2.0 nm and 5.0±2.0 nm, were added to luminescent porous silicon by drop casting. The gold nanoparticles interact with porous silicon by modifying its optical properties such as photoluminescence. That being said, plasmon effects are not the only to be taken into account; as shown in this work, surface chemical modification and porosity also play a key role in the final performance of photoluminescence of a porous silicon–gold nanoparticle hybrid system. -- Highlights: • A hybrid material consisting of porous silicon and gold nanoparticles was fabricated. • Porous silicon/gold nanoparticle hybrid material was made by drop casting. • Influence of plasmonics, surface chemical modification and porosity on the optical behavior of our material was analyzed. • Porosity is proposed as a parameter control to obtain the best effects on luminescence of the hybrid plasmonic material.

  5. Integrating Soil Silicon Amendment into Management Programs for Insect Pests of Drill-Seeded Rice.

    Science.gov (United States)

    Villegas, James M; Way, Michael O; Pearson, Rebecca A; Stout, Michael J

    2017-08-13

    Silicon soil amendment has been shown to enhance plant defenses against insect pests. Rice is a silicon-accumulating graminaceous plant. In the southern United States, the rice water weevil and stem borers are important pests of rice. Current management tactics for these pests rely heavily on the use of insecticides. This study evaluated the effects of silicon amendment when combined with current management tactics for these rice insect pests in the field. Field experiments were conducted from 2013 to 2015. Rice was drill-planted in plots subjected to factorial combinations of variety (conventional and hybrid), chlorantraniliprole seed treatment (treated and untreated), and silicon amendment (treated and untreated). Silicon amendment reduced densities of weevil larvae on a single sampling date in 2014, but did not affect densities of whiteheads caused by stem borers. In contrast, insecticidal seed treatment strongly reduced densities of both weevil larvae and whiteheads. Higher densities of weevil larvae were also observed in the hybrid variety in 2014, while higher incidences of whiteheads were observed in the conventional variety in 2014 and 2015. Silicon amendment improved rice yields, as did chlorantraniliprole seed treatment and use of the hybrid variety.

  6. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  7. Hybrid Silicon Nanocone–Polymer Solar Cells

    KAUST Repository

    Jeong, Sangmoo

    2012-06-13

    Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

  8. Hybrid Silicon Nanocone–Polymer Solar Cells

    KAUST Repository

    Jeong, Sangmoo; Garnett, Erik C.; Wang, Shuang; Yu, Zongfu; Fan, Shanhui; Brongersma, Mark L.; McGehee, Michael D.; Cui, Yi

    2012-01-01

    Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

  9. Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions

    International Nuclear Information System (INIS)

    Lu Jiang; Tian Xiaoli; Lu Shuojin; Zhou Hongyu; Zhu Yangjun; Han Zhengsheng

    2013-01-01

    The ability of high-voltage power MOSFETs and IGBTs to withstand avalanche events under unclamped inductive switching (UIS) conditions is measured. This measurement is to investigate and compare the dynamic avalanche failure behavior of the power MOSFETs and the IGBT, which occur at different current conditions. The UIS measurement results at different current conditions show that the main failure reason of the power MOSFETs is related to the parasitic bipolar transistor, which leads to the deterioration of the avalanche reliability of power MOSFETs. However, the results of the IGBT show two different failure behaviors. At high current mode, the failure behavior is similar to the power MOSFETs situation. But at low current mode, the main failure mechanism is related to the parasitic thyristor activity during the occurrence of the avalanche process and which is in good agreement with the experiment result. (semiconductor devices)

  10. High rate particle tracking and ultra-fast timing with a thin hybrid silicon pixel detector

    Science.gov (United States)

    Fiorini, M.; Aglieri Rinella, G.; Carassiti, V.; Ceccucci, A.; Cortina Gil, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A.; Martin, E.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Perktold, L.; Petagna, P.; Petrucci, F.; Poltorak, K.; Riedler, P.; Rivetti, A.; Statera, M.; Velghe, B.

    2013-08-01

    The Gigatracker (GTK) is a hybrid silicon pixel detector designed for the NA62 experiment at CERN. The beam spectrometer, made of three GTK stations, has to sustain high and non-uniform particle rate (∼ 1 GHz in total) and measure momentum and angles of each beam track with a combined time resolution of 150 ps. In order to reduce multiple scattering and hadronic interactions of beam particles, the material budget of a single GTK station has been fixed to 0.5% X0. The expected fluence for 100 days of running is 2 ×1014 1 MeV neq /cm2, comparable to the one foreseen in the inner trackers of LHC detectors during 10 years of operation. To comply with these requirements, an efficient and very low-mass (< 0.15 %X0) cooling system is being constructed, using a novel microchannel cooling silicon plate. Two complementary read-out architectures have been produced as small-scale prototypes: one is based on a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other makes use of a constant-fraction discriminator followed by an on-pixel TDC. The read-out ASICs are produced in 130 nm IBM CMOS technology and will be thinned down to 100 μm or less. An overview of the Gigatracker detector system will be presented. Experimental results from laboratory and beam tests of prototype bump-bonded assemblies will be described as well. These results show a time resolution of about 170 ps for single hits from minimum ionizing particles, using 200 μm thick silicon sensors.

  11. New advances for modelling the debris avalanches

    Science.gov (United States)

    Cuomo, Sabatino; Cascini, Leonardo; Pastor, Manuel; Castorino, Giuseppe Claudio

    2013-04-01

    Flow-like landslides are a major global hazard and they occur worldwide causing a large number of casualties, significant structural damages to property and infrastructures as well as economic losses. When involving open slopes, these landslides often occur in triangular source areas where initial slides turn into avalanches through further failures and/or eventual soil entrainment. This paper deals with the numerical modelling of the propagation stage of debris avalanches which provides information such as the propagation pattern of the mobilized material, its velocity, thickness and run-out distance. In the paper, a "depth integrated" model is used which allows: i) adequately taking into account the irregular topography of real slopes which greatly affect the propagation stage and ii) using a less time consuming model than fully 3D approaches. The used model is named "GeoFlow_SPH" and it was formerly applied to theoretical, experimental and real case histories (Pastor et al., 2009; Cascini et al., 2012). In this work the behavior of debris avalanches is analyzed with special emphasis on the apical angle, one of the main features of this type of landslide, in relation to soil rheology, hillslope geometry and features of triggering area. Furthermore, the role of erosion has been investigated with reference to the uppermost parts of open slopes with a different steepness. These analyses are firstly carried out for simplified benchmark slopes, using both water-like materials (with no shear strength) and debris type materials. Then, three important case studies of Campania region (Cervinara, Nocera Inferiore e Sarno) are analyzed where debris avalanches involved pyroclastic soils originated from the eruptive products of Vesusius volcano. The results achieved for both benchmark slopes and real case histories outline the key role played by the erosion on the whole propagation stage of debris avalanches. The results are particularly satisfactory since they indicate the

  12. Scaling behavior of individual barkhausen avalanches in nucleation-mediated magnetization reversal processes

    Energy Technology Data Exchange (ETDEWEB)

    Im, Mi-Young; Fischer, Peter; Kim, Dong-Hyun; Shin, Sung-Chul

    2009-11-09

    We report the scaling behavior of Barkhausen avalanches along the hysteresis loop of a CoCrPt alloy film with perpendicular magnetic anisotropy for every field step of 200 Oe. Individual Barkhausen avalanches are directly observed via high-resolution soft X-ray microscopy with a spatial resolution of 15 nm. The Barkhausen avalanches exhibit a power-law scaling behavior, where the scaling exponent of the power-law distribution drastically changes from 1 {+-} 0.04 to 1.47 {+-} 0.03 as the applied magnetic field approaches the coercivity of the CoCrPt film. We infer that this is due to the coupling of adjacent domains.

  13. Angle sensitive single photon avalanche diode

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Changhyuk, E-mail: cl678@cornell.edu; Johnson, Ben, E-mail: bcj25@cornell.edu; Molnar, Alyosha, E-mail: am699@cornell.edu [Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

    2015-06-08

    An ideal light sensor would provide exact information on intensity, timing, location, and angle of incoming photons. Single photon avalanche diodes (SPADs) provide such desired high (single photon) sensitivity with precise time information and can be implemented at a pixel-scale to form an array to extract spatial information. Furthermore, recent work has demonstrated photodiode-based structures (combined with micro-lenses or diffraction gratings) that are capable of encoding both spatial and angular information of incident light. In this letter, we describe the implementation of such a grating structure on SPADs to realize a pixel-scale angle-sensitive single photon avalanche diode (A-SPAD) built in a standard CMOS process. While the underlying SPAD structure provides high sensitivity, the time information of the two layers of diffraction gratings above offers angle-sensitivity. Such a unique combination of SPAD and diffraction gratings expands the sensing dimensions to pave a path towards lens-less 3-D imaging and light-field time-of-flight imaging.

  14. First Townsend coefficient of organic vapour in avalanche counters

    International Nuclear Information System (INIS)

    Sernicki, J.

    1990-01-01

    A new concept is presented in the paper for implementing the proven method of determining the first Townsend coefficient (α) of gases using an avalanche counter. The A and B gas constants, interrelated by the expression α/p=A exp[-B/(K/p)], are analyzed. Parallel-plate avalanche counters (PPAC) with an electrode spacing d from 0.1 to 0.4 cm have been employed for the investigation, arranged to register low-energy alpha particles at n-heptane vapour pressures of p≥5 Torr. An in-depth discussion is given, covering the veracity and the behaviour vs K/p, of the n-heptane A and B constants determined at reduced electric-field intensity values ranging from 173.5 to 940 V/cm Torr; the constants have been found to depend upon d. The results of the investigation are compared to available data of the α coefficient of organic vapours used in avalanche counters. The PPAC method of determining α reveals some imperfections at very low values of the pd product. (orig.)

  15. AN MHD AVALANCHE IN A MULTI-THREADED CORONAL LOOP

    Energy Technology Data Exchange (ETDEWEB)

    Hood, A. W.; Cargill, P. J.; Tam, K. V. [School of Mathematics and Statistics, University of St Andrews, St Andrews, Fife, KY16 9SS (United Kingdom); Browning, P. K., E-mail: awh@st-andrews.ac.uk [School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom)

    2016-01-20

    For the first time, we demonstrate how an MHD avalanche might occur in a multithreaded coronal loop. Considering 23 non-potential magnetic threads within a loop, we use 3D MHD simulations to show that only one thread needs to be unstable in order to start an avalanche even when the others are below marginal stability. This has significant implications for coronal heating in that it provides for energy dissipation with a trigger mechanism. The instability of the unstable thread follows the evolution determined in many earlier investigations. However, once one stable thread is disrupted, it coalesces with a neighboring thread and this process disrupts other nearby threads. Coalescence with these disrupted threads then occurs leading to the disruption of yet more threads as the avalanche develops. Magnetic energy is released in discrete bursts as the surrounding stable threads are disrupted. The volume integrated heating, as a function of time, shows short spikes suggesting that the temporal form of the heating is more like that of nanoflares than of constant heating.

  16. Observation of the Avalanche of Runaway Electrons in Air in a Strong Electric Field

    Science.gov (United States)

    Gurevich, A. V.; Mesyats, G. A.; Zybin, K. P.; Yalandin, M. I.; Reutova, A. G.; Shpak, V. G.; Shunailov, S. A.

    2012-08-01

    The generation of an avalanche of runaway electrons is demonstrated for the first time in a laboratory experiment. Two flows of runaway electrons are formed sequentially in an extended air discharge gap at the stage of delay of a pulsed breakdown. The first, picosecond, runaway electron flow is emitted in the cathode region where the field is enhanced. Being accelerated in the gap, this beam generates electrons due to impact ionization. These secondary electrons form a delayed avalanche of runaway electrons if the field is strong enough. The properties of the avalanche correspond to the existing notions about the runaway breakdown in air. The measured current of the avalanche exceeds up to an order the current of the initiating electron beam.

  17. Evaluating terrain based criteria for snow avalanche exposure ratings using GIS

    Science.gov (United States)

    Delparte, Donna; Jamieson, Bruce; Waters, Nigel

    2010-05-01

    Snow avalanche terrain in backcountry regions of Canada is increasingly being assessed based upon the Avalanche Terrain Exposure Scale (ATES). ATES is a terrain based classification introduced in 2004 by Parks Canada to identify "simple", "challenging" and "complex" backcountry areas. The ATES rating system has been applied to well over 200 backcountry routes, has been used in guidebooks, trailhead signs and maps and is part of the trip planning component of the AVALUATOR™, a simple decision-support tool for backcountry users. Geographic Information Systems (GIS) offers a means to model and visualize terrain based criteria through the use of digital elevation model (DEM) and land cover data. Primary topographic variables such as slope, aspect and curvature are easily derived from a DEM and are compatible with the equivalent evaluation criteria in ATES. Other components of the ATES classification are difficult to extract from a DEM as they are not strictly terrain based. An overview is provided of the terrain variables that can be generated from DEM and land cover data; criteria from ATES which are not clearly terrain based are identified for further study or revision. The second component of this investigation was the development of an algorithm for inputting suitable ATES criteria into a GIS, thereby mimicking the process avalanche experts use when applying the ATES classification to snow avalanche terrain. GIS based classifications were compared to existing expert assessments for validity. The advantage of automating the ATES classification process through GIS is to assist avalanche experts with categorizing and mapping remote backcountry terrain.

  18. Optical properties of phosphorescent nano-silicon electrochemically doped with terbium

    Energy Technology Data Exchange (ETDEWEB)

    Gelloz, Bernard [Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Mentek, Romain; Koshida, Nobuyoshi [Tokyo University A and T, 2-24-16 Nakacho, Koganei, Tokyo 184-8588 (Japan)

    2012-12-15

    Hybrid thin films consisting of oxidized nano-silicon doped with terbium have been fabricated. Nano-silicon was formed by electrochemical etching of silicon wafers. Terbium was incorporated into nano-silicon pores by electrochemical deposition. Different oxidizing thermal treatments were applied to the films. The samples treated by high-pressure water vapor annealing (HWA) exhibited strong blue emission with a phosphorescent component, as previously reported by our group. The low temperature (260 C) HWA also led to strong emission from Tb{sup 3+} ions, whereas typical high temperature (900 C) treatment generally used to activate Tb{sup 3+} ions in silicon-based materials led to less luminescent samples. Spectroscopic and dynamic analyses suggest that terbium was incorporated as a separate oxide phase in the pores of the porous nano-silicon. The PL of the terbium phase and nano-silicon phase exhibit different temperature and excitation power dependences suggesting little optical or electronic interaction between the two phases. The luminescence of terbium is better activated at low temperature (260 C) than at high temperature (900 C). The hybrid material may find some applications in photonics, for instance as a display material. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. A mineralogical and granulometric study of Cayambe volcano debris avalanche deposit

    Science.gov (United States)

    Detienne, M.; Delmelle, P.; Guevara, A.; Samaniego, P.; Bustillos, J.; Sonnet, P.; Opfergelt, S.

    2013-12-01

    Volcano flank/sector collapse represents one of the most catastrophic volcanic hazards. Various volcanic and non-volcanic processes are known to decrease the stability of a volcanic cone, eventually precipitating its gravitational failure. Among them, hydrothermal alteration of volcanic rocks leading to clay mineral formation is recognized as having a large negative impact on rock strength properties. Furthermore, the presence of hydrothermal clays in the collapsing mass influences the behavior of the associated volcanic debris avalanche. In particular, clay-containing debris avalanches seem to travel farther and spread more widely than avalanches of similar volume but which do not incorporate hydrothermally-altered materials. However, the relationship between hydrothermal alteration, flank collapse and debris avalanche behavior is not well understood. The objective of this study is to better determine the volume and composition of hydrothermal clay minerals in the poorly characterized debris avalanche deposit (DAD) of Cayambe composite volcano, located in a densely populated area ~70 km northeast of Quito, Ecuador. Cayambe DAD originated from a sector collapse, which occurred less than 200 ka ago. The DAD is 10-20 m thick and has an estimated total volume of ~0.85 Km3. The H/L ratio (where H is the vertical drop and L is the travel distance of the avalanche) for Cayambe DAD is ~0.095, suggesting a high mobility. In the medial-distal zone, at 9-20 km from its source, the DAD consists of an unstratified and unsorted matrix supporting millimetric to metric clasts. It has a matrix facies (i.e. rich in particles DAD behaved as a cohesive debris flow. Analysis of 13 matrix samples reveals a large variability in particle size distribution. This may reflect poor mixing of the collapsed material during transport. The clay fraction content in the matrix ranges from 15 to 30 wt.%, and does not show a relationship with the sample position in the DAD. Mineralogical

  20. Critical state transformation in hard superconductors resulting from thermomagnetic avalanches

    International Nuclear Information System (INIS)

    Chabanenko, V.V.; Kuchuk, E.I.; Rusakov, V.F.; Abaloszewa, I.; Nabialek, A.; Perez-Rodriguez, F.

    2016-01-01

    The results of experimental investigations of magnetic flux dynamics in finite superconductors, obtained using integral and local measurements methods, are presented. Local methods were aimed at clarifying the role of demagnetizing factor in dynamic formation of a complex magnetic structure of the critical state of hard superconductors. To understand the reasons for cardinal restructuring of the induction, we further analyzed the literature data of flux dynamics visualization during avalanches, obtained by magneto-optical methods. New features in the behavior of the magnetic flux during and after the avalanche were discovered. Two stages of the formation of the induction structures in the avalanche area were established, i.e. of homogeneous and heterogeneous filling with the magnetic flux. The mechanism of the inversion of the induction profile was considered. Oscillations in the speed of the front of the magnetic flux were revealed. Transformation of the critical state near the edge of the sample was analyzed. The role of thermal effects and of de-magnetizing factor in the dissipative flux dynamics was shown. Generalized information allowed, in the framework of the Bean concept, to present a model the transformation of the picture of the induction of the critical state and of the superconducting currents of a finite superconductor as a result of flux avalanches for two regimes - of screening and trapping of the magnetic flux.

  1. Avalanches in a Bose-Einstein condensate

    NARCIS (Netherlands)

    Schuster, J.; Marte, A.; Amtage, S.; Sang, B.; Rempe, G.; Beijerinck, H.C.W.

    2001-01-01

    Collisional avalanches are identified to be responsible for an 8-fold increase of the initial loss rate of a large 87Rb condensate. We show that the collisional opacity of an ultracold gas exhibits a critical value. When exceeded, losses due to inelastic collisions are substantially enhanced. Under

  2. Silicon Nanowire/Polymer Hybrid Solar Cell-Supercapacitor: A Self-Charging Power Unit with a Total Efficiency of 10.5.

    Science.gov (United States)

    Liu, Ruiyuan; Wang, Jie; Sun, Teng; Wang, Mingjun; Wu, Changsheng; Zou, Haiyang; Song, Tao; Zhang, Xiaohong; Lee, Shuit-Tong; Wang, Zhong Lin; Sun, Baoquan

    2017-07-12

    An integrated self-charging power unit, combining a hybrid silicon nanowire/polymer heterojunction solar cell with a polypyrrole-based supercapacitor, has been demonstrated to simultaneously harvest solar energy and store it. By efficiency enhancement of the hybrid nanowire solar cells and a dual-functional titanium film serving as conjunct electrode of the solar cell and supercapacitor, the integrated system is able to yield a total photoelectric conversion to storage efficiency of 10.5%, which is the record value in all the integrated solar energy conversion and storage system. This system may not only serve as a buffer that diminishes the solar power fluctuations from light intensity, but also pave its way toward cost-effective high efficiency self-charging power unit. Finally, an integrated device based on ultrathin Si substrate is demonstrated to expand its feasibility and potential application in flexible energy conversion and storage devices.

  3. Avalanche effect in the planar array of superheated superconductors

    International Nuclear Information System (INIS)

    Meagher, G.; Pond, J.; Kotlicki, A.; Turrell, B.G.; Eska, G.; Drukier, A.K.

    1996-01-01

    An avalanche effect has been observed in a cryogenic detector based on the planar array of superheated superconductors (PASS). The indium PASS, fabricated by photolithography on a mylar substrate, consisted of 40 well-separated lines each containing about 175 spheres of diameter 18 μm and separation 20 μm with those at the end being shielded by superconducting wire. The magnetic field was applied in the PASS plane parallel to the lines. Avalanche events in which several granules changed their state from superconducting to normal were triggered by the nucleation of the transition in a single grain by an alpha particle. (author)

  4. Avalanche size scaling in sheared three-dimensional amorphous solid

    DEFF Research Database (Denmark)

    Bailey, Nicholas; Schiøtz, Jakob; Lemaître, A.

    2007-01-01

    We study the statistics of plastic rearrangement events in a simulated amorphous solid at T=0. Events are characterized by the energy release and the "slip volume", the product of plastic strain and system volume. Their distributions for a given system size L appear to be exponential......, but a characteristic event size cannot be inferred, because the mean values of these quantities increase as L-alpha with alpha similar to 3/2. In contrast with results obtained in 2D models, we do not see simply connected avalanches. The exponent suggests a fractal shape of the avalanches, which is also evidenced...

  5. Analysis of avalanche risk factors in backcountry terrain based on usage frequency and accident data in Switzerland

    Science.gov (United States)

    Techel, F.; Zweifel, B.; Winkler, K.

    2015-09-01

    Recreational activities in snow-covered mountainous terrain in the backcountry account for the vast majority of avalanche accidents. Studies analyzing avalanche risk mostly rely on accident statistics without considering exposure (or the elements at risk), i.e., how many, when and where people are recreating, as data on recreational activity in the winter mountains are scarce. To fill this gap, we explored volunteered geographic information on two social media mountaineering websites - bergportal.ch and camptocamp.org. Based on these data, we present a spatiotemporal pattern of winter backcountry touring activity in the Swiss Alps and compare this with accident statistics. Geographically, activity was concentrated in Alpine regions relatively close to the main Swiss population centers in the west and north. In contrast, accidents occurred equally often in the less-frequented inner-alpine regions. Weekends, weather and avalanche conditions influenced the number of recreationists, while the odds to be involved in a severe avalanche accident did not depend on weekends or weather conditions. However, the likelihood of being involved in an accident increased with increasing avalanche danger level, but also with a more unfavorable snowpack containing persistent weak layers (also referred to as an old snow problem). In fact, the most critical situation for backcountry recreationists and professionals occurred on days and in regions when both the avalanche danger was critical and when the snowpack contained persistent weak layers. The frequently occurring geographical pattern of a more unfavorable snowpack structure also explains the relatively high proportion of accidents in the less-frequented inner-alpine regions. These results have practical implications: avalanche forecasters should clearly communicate the avalanche danger and the avalanche problem to the backcountry user, particularly if persistent weak layers are of concern. Professionals and recreationists, on the

  6. Silicon spectral response extension through single wall carbon nanotubes in hybrid solar cells

    KAUST Repository

    Del Gobbo, Silvano; Castrucci, P.; Fedele, S.; Riele, L.; Convertino, A.; Morbidoni, M.; De Nicola, F.; Scarselli, M.; Camilli, L.; De Crescenzi, M.

    2013-01-01

    Photovoltaic devices based on single wall carbon nanotubes (SWCNTs) and n-silicon multiple heterojunctions have been fabricated by a SWCNT film transferring process. We report on the ability of the carbon nanotubes to extend the Si spectral range towards the near ultraviolet (UV) and the near infrared regions. Semiconducting and about metallic SWCNT networks have been studied as a function of the film sheet resistance, Rsh. Optical absorbance and Raman spectroscopy have been used to assign nanotube chirality and electronic character. This gave us hints of evidence of the participation of the metal nanotubes in the photocurrent generation. Moreover, we provide evidence that the external quantum efficiency spectral range can be modulated as a function of the SWCNT network sheet resistance in a hybrid SWCNT/Si solar cell. This result will be very useful to further design/optimize devices with improved performance in spectral regions generally not covered by conventional Si p-n devices. © 2013 The Royal Society of Chemistry.

  7. Fractal multiplication of electron avalanches and streamers: new mechanism of electrical breakdown?

    International Nuclear Information System (INIS)

    Ficker, T

    2007-01-01

    Long-lasting problems concerning peculiar statistical behaviour of high populated electron avalanches have been analysed. These avalanches are precursors of streamer breakdown in gases. The present streamer theory fails in explaining severe systematic deviations from the Furry statistics that is believed to be a governing statistical law. Such a deviated behaviour of high populated avalanches seems to be a consequence of a special pre-breakdown mechanism that is rather different from that known so far in discharge physics. This analysis tends towards formulating a modified theoretical concept supplementing the streamer theory by a new statistical view of pre-streamer states. The correctness of the concept is corroborated by a series of experiments

  8. Phosphorous–vacancy–oxygen defects in silicon

    KAUST Repository

    Wang, Hao; Chroneos, Alexander; Hall, D.; Schwingenschlö gl, Udo; Sgourou, E. N.

    2013-01-01

    Electronic structure calculations employing the hybrid functional approach are used to gain fundamental insight in the interaction of phosphorous with oxygen interstitials and vacancies in silicon. It recently has been proposed, based on a binding

  9. Lowering effect of radioactive irradiation on breakdown voltage and electron avalanche pulse characteristics

    International Nuclear Information System (INIS)

    Kawahashi, Akira; Nakano, Toru; Hosokawa, Tatsuzo; Miyoshi, Yosinori.

    1976-01-01

    In the time resolving measurement of the growing process and breakdown of electron avalanche in a gap of uniform electric field, the phenomenon that DC breakdown voltage slightly lowered was observed when β ray was irradiated as the initial electron source, as compared with unirradiated condition. Beta source used is 90 Sr- 90 Y of 2 mCi in radiative equilibrium. The experimental results and the examination are described in detail. In brief, the remarkable superposition of succeeding avalanche pulse over the preceeding avalanche pulse waveform was observed under the gap condition in which the breakdown voltage decreased in β-ray irradiation. Thus this superposition of avalanche pulses is considered as one of the causes of the breakdown voltage reduction. When β source is used as the initial electron source, the number of supplied initial electrons is very large as compared with unity, and at the same time, a great number of initial electrons can be supplied within the diffusion radius r of avalanche. Then the effect of initial electron number n 0 was considered by employing a diagram for breakdown scheme. The transition from Townsend type breakdown to streamer type breakdown occurs owing to increasing n 0 , and in that condition, the breakdown voltage lowers slightly. (Wakatsuki, Y)

  10. Volcanic avalanche fault zone with pseudotachylite and gouge in French Massif Central

    Science.gov (United States)

    Bernard, Karine; van Wyk de Vries, Benjamin

    2017-11-01

    Structures and textures with sedimentological variations at different scales of the lithofacies assemblage help us to constrain the basal kinematic transition from non-depositional to depositional conditions during volcanic avalanche emplacement. In the well-exposed impact-sheared contact along volcanic avalanche fault zone in the French Massif Central, we observe how the granular textures of the pseudotachylite and fault gouge have recorded the propagation of shock wave with granular oscillatory stress. Sequential events of basal aggradation along avalanche fault zone have been established related to fractal D-values, temperature pressure regime and oscillatory stress during slow wave velocity. A typical lithofacies assemblage with a reverse grading shows the pseudotachylite and fault gouge. A cataclastic gradient is characterised by the fractal D-values from 2.7 in jigsaw breccias with pseudotachylite partial melt, to 2.6 in the polymodal gouge. Shock, brecciation and comminution produce cataclastic shear bands in the pseudotachylite and quartz microstructures along the basal contact of the volcanic debris-avalanche deposit. Gouge microstructures show granular segregation, cataclasis with antithetic rotational Riedel shear, and an arching effect between the Riedel shear bands. X-ray microtomography provided 3D microfabrics along the clastic vein in the sandy-gouge. From the available statistical dataset, a few equations have been developed implicating the same cataclastic origin with a co-genetic evolution of lithofacies. An impact wave during primary shear propagation may contribute to produce hydroclastic matrix, pseudotachylite partial melt and proximal gouge thixotropy with v 50m/s and a T < 654 °C. The interseismic period with oscillatory stress is related to crushed clasts and basaltic melt around 800 °C, Riedel shear bands with granular segregation along the fault gouge. The secondary shock by matrix-rich avalanche (ΔP = 10GPa, T ≥ 1000-1500

  11. Prediction of picosecond voltage collapse and electromagnetic wave generation in gas avalanche switches

    International Nuclear Information System (INIS)

    Mayhall, D.J.; Yee, J.H.; Duong-Van, M.; Villa, F.

    1988-01-01

    A picosecond speed switch, the Gas Avalanche Switch (GAS), has been proposed for GeV linear accelerators. The medium is gas at high pressure (100 - 700 atm). An avalanche discharge is induced between pulse-charged high voltage electrodes by electron deposition from a fast laser pulse. Avalanche electrons move to the positive electrode, causing the applied voltage to collapse in picoseconds. A two-dimensional (2D) electromagnetic electron fluid computer code calculates the avalanche evolution and voltage collapse in air for an infinite parallel plate capacitor with a 0.1 mm spacing. Calculations are done for an accelerator switch geometry consisting of a 0.7 mm wide by 0.8 mm high, rectangular, high voltage center electrode (CE) between the grounded plates of a parallel plate line of 2 mm spacing. Several variations of CE elevation and initial electron deposition are investigated The 2D character of the outgoing TEM waves is shown

  12. Enabling Large Focal Plane Arrays Through Mosaic Hybridization

    Science.gov (United States)

    Miller, Timothy M.; Jhabvala, Christine A.; Leong, Edward; Costen, Nicholas P.; Sharp, Elmer; Adachi, Tomoko; Benford, Dominic J.

    2012-01-01

    We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

  13. Infrasound array criteria for automatic detection and front velocity estimation of snow avalanches: towards a real-time early-warning system

    Science.gov (United States)

    Marchetti, E.; Ripepe, M.; Ulivieri, G.; Kogelnig, A.

    2015-11-01

    Avalanche risk management is strongly related to the ability to identify and timely report the occurrence of snow avalanches. Infrasound has been applied to avalanche research and monitoring for the last 20 years but it never turned into an operational tool to identify clear signals related to avalanches. We present here a method based on the analysis of infrasound signals recorded by a small aperture array in Ischgl (Austria), which provides a significant improvement to overcome this limit. The method is based on array-derived wave parameters, such as back azimuth and apparent velocity. The method defines threshold criteria for automatic avalanche identification by considering avalanches as a moving source of infrasound. We validate the efficiency of the automatic infrasound detection with continuous observations with Doppler radar and we show how the velocity of a snow avalanche in any given path around the array can be efficiently derived. Our results indicate that a proper infrasound array analysis allows a robust, real-time, remote detection of snow avalanches that is able to provide the number and the time of occurrence of snow avalanches occurring all around the array, which represent key information for a proper validation of avalanche forecast models and risk management in a given area.

  14. Hybrid emitter all back contact solar cell

    Science.gov (United States)

    Loscutoff, Paul; Rim, Seung

    2016-04-12

    An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

  15. Spatially Extended Avalanches in a Hysteretic Capillary Condensation System: Superfluid 4He in Nuclepore

    International Nuclear Information System (INIS)

    Lilly, M.P.; Wootters, A.H.; Hallock, R.B.

    1996-01-01

    Capacitive studies of hysteretic capillary condensation of superfluid 4 He in Nuclepore have shown that the initial draining of the pores occurs over a small range of the chemical potential with avalanches present as groups of pores drain. In the work reported here, the avalanches in this system are shown to be nonlocal events which involve pores distributed at low density across the entire sample. The nonlocal avalanche behavior is shown to be enabled by the presence of a superfluid film connection among the pores. copyright 1996 The American Physical Society

  16. Hole-Initiated-Avalanche, Linear-Mode, Single-Photon-Sensitive Avalanche Photodetector with Reduced Excess Noise and Low Dark Count Rate, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A radiation hard, single photon sensitive InGaAs avalanche photodiode (APD) receiver technology will be demonstrated useful for long range space based optical...

  17. On the relativistic large-angle electron collision operator for runaway avalanches in plasmas

    Science.gov (United States)

    Embréus, O.; Stahl, A.; Fülöp, T.

    2018-02-01

    Large-angle Coulomb collisions lead to an avalanching generation of runaway electrons in a plasma. We present the first fully conservative large-angle collision operator, derived from the relativistic Boltzmann operator. The relation to previous models for large-angle collisions is investigated, and their validity assessed. We present a form of the generalized collision operator which is suitable for implementation in a numerical kinetic equation solver, and demonstrate the effect on the runaway-electron growth rate. Finally we consider the reverse avalanche effect, where runaways are slowed down by large-angle collisions, and show that the choice of operator is important if the electric field is close to the avalanche threshold.

  18. Mode-locked silicon evanescent lasers.

    Science.gov (United States)

    Koch, Brian R; Fang, Alexander W; Cohen, Oded; Bowers, John E

    2007-09-03

    We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).

  19. Reducing financial avalanches by random investments

    Science.gov (United States)

    Biondo, Alessio Emanuele; Pluchino, Alessandro; Rapisarda, Andrea; Helbing, Dirk

    2013-12-01

    Building on similarities between earthquakes and extreme financial events, we use a self-organized criticality-generating model to study herding and avalanche dynamics in financial markets. We consider a community of interacting investors, distributed in a small-world network, who bet on the bullish (increasing) or bearish (decreasing) behavior of the market which has been specified according to the S&P 500 historical time series. Remarkably, we find that the size of herding-related avalanches in the community can be strongly reduced by the presence of a relatively small percentage of traders, randomly distributed inside the network, who adopt a random investment strategy. Our findings suggest a promising strategy to limit the size of financial bubbles and crashes. We also obtain that the resulting wealth distribution of all traders corresponds to the well-known Pareto power law, while that of random traders is exponential. In other words, for technical traders, the risk of losses is much greater than the probability of gains compared to those of random traders.

  20. Avalanches in Mn12-Acetate: ``Magnetic Burning"

    Science.gov (United States)

    McHugh, Sean; Suzuki, Y.; Graybill, D.; Sarachik, M. P.; Avraham, N.; Myasoedov, Y.; Shtrikman, H.; Zeldov, E.; Bagai, R.; Chakov, N. E.; Christou, G.

    2006-03-01

    From local time-resolved measurements of fast reversal of the magnetization in single crystals of the molecular magnet Mn12-acetate, we have shown[1] that the magnetization avalanche spreads as a narrow interface that propagates through the crystal at a constant velocity roughly two orders of magnitude smaller than the speed of sound. This phenomenon is closely analogous to the propagation of a flame front (deflagration) through a flammable chemical substance. The propagation speed of the avalanche depends on the energy stored in each molecule, which can be controlled and tuned using an external magnetic field. We report studies of propagation speed with different external fields in Mn12-acetate. [1] Yoko Suzuki, M.P. Sarachik, E.M. Chudnovsky, S. McHugh, R. Gonzalez-Rubio, N. Avraham, Y. Myasoedov, H. Shtrikman, E. Zeldov, N.E. Chakov and G. Christou, Phys. Rev. Lett. 95, 147201 (2005).

  1. Using GIS and Google Earth for the creation of the Going-to-the-Sun Road Avalanche Atlas, Glacier National Park, Montana, USA

    Science.gov (United States)

    Peitzsch, Erich H.; Fagre, Daniel B.; Dundas, Mark

    2010-01-01

    Snow avalanche paths are key geomorphologic features in Glacier National Park, Montana, and an important component of mountain ecosystems: they are isolated within a larger ecosystem, they are continuously disturbed, and they contain unique physical characteristics (Malanson and Butler, 1984). Avalanches impact subalpine forest structure and function, as well as overall biodiversity (Bebi et al., 2009). Because avalanches are dynamic phenomena, avalanche path geometry and spatial extent depend upon climatic regimes. The USGS/GNP Avalanche Program formally began in 2003 as an avalanche forecasting program for the spring opening of the ever-popular Going-to-the-Sun Road (GTSR), which crosses through 37 identified avalanche paths. Avalanche safety and forecasting is a necessary part of the GTSR spring opening procedures. An avalanche atlas detailing topographic parameters and oblique photographs was completed for the GTSR corridor in response to a request from GNP personnel for planning and resource management. Using ArcMap 9.2 GIS software, polygons were created for every avalanche path affecting the GTSR using aerial imagery, field-based observations, and GPS measurements of sub-meter accuracy. Spatial attributes for each path were derived within the GIS. Resulting products include an avalanche atlas book for operational use, a geoPDF of the atlas, and a Google Earth flyover illustrating each path and associated photographs. The avalanche atlas aids park management in worker safety, infrastructure planning, and natural resource protection by identifying avalanche path patterns and location. The atlas was created for operational and planning purposes and is also used as a foundation for research such as avalanche ecology projects and avalanche path runout modeling.

  2. The development of structures in analogue and natural debris avalanches

    Science.gov (United States)

    Paguican, Engielle Mae; van Wyk de Vries, Benjamin; Mahar Francisco Lagmay, Alfredo; Grosse, Pablo

    2010-05-01

    All types of rockslide-debris avalanches present a plethora of internal structures that are also well observed on the surface. Many of these are seen as faults and folds that can be used to determine deformation history and kinematics. We present two sets of simple and well-constrained experiments of reduced basal friction laboratory rockslides, equivalent to a highly deformed simple shear layer, with plug-flow. These follow the original ramp-slide work of Shea and van Wyk de Vries (Geosphere, 2008). The experiments used a curved ramp where materials accelerate until reaching a gently-sloped depositional surface and a constantly inclined ramp with a more regular slope and longer slides. A detailed description of deposit structures, their sequential formation and morphology is then used to investigate the transport type and deformation chronology from slide initiation to runout stopping of avalanches. Results using a curved ramp show accumulation and thickening at where the slope decreases. The thickened mass then further remobilises and advances by secondary collapse of the mass. Such a stop-start process may be important in many mountainous avalanches where there are rapid changes in slope. The constantly inclined ramp shows shearing and extensional structures at the levees and a set of compression and extension structures in the middle. We noted that frontal accumulation during flow occurs as materials at the front move slower relative to those in the medial and proximal zones. This also leads to secondary frontal collapse, and helps to maintain a thicker mass that can flow further. Descriptions and analyses of these structures are then applied to the kinematics and dynamics of natural examples. We study the 2006 Guinsaugon Rockslide event in the Philippines and find that frontal accumulation and secondary avalanching had also occurred and were important in determining the distribution and runout of the mass. Frontal bulking and collapse may also have occurred at

  3. Hybrid integration of carbon nanotubes in silicon photonic structures

    Science.gov (United States)

    Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

    2017-02-01

    Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

  4. Efficient Sub-Bandgap Light Absorption and Signal Amplification in Silicon Photodetectors

    Science.gov (United States)

    Liu, Yu-Hsin

    This thesis focuses on two areas in silicon photodetectors, the first being enhancing the sub-bandgap light absorption of IR wavelenghts in silicon, and the second being intrinsic signal amplification in silicon photodetectors. Both of these are achieved using heavily doped p-n junction devices which create localized states that relax the k-selection rule of indirect bandgap material. The probability of transitions between impurity band and the conduction/valence band would be much more efficient than the one between band-to-band transition. The waveguide-coupled epitaxial p-n photodetector was demonstrated for 1310 nm wavelength detection. Incorporated with the Franz-Keldysh effect and the quasi-confined epitaxial layer design, an absorption coefficient around 10 cm-1 has been measured and internal quantum efficiency nearly 100% at -2.5V. The absorption coefficient is calculated from the wave function of the electron and hole in p-n diode. The heavily doped impurity wave function can be formulated as a delta function, and the quasi-confined conduction band energy states, and the wave function on each level can be obtained from the Silvaco software. The calculated theoretical absorption coefficient increases with the increasing applied bias and the doping concentration, which matches the experimental results. To solve the issues of large excess noise and high operation bias for avalanche photodiodes based on impact ionization, I presented a detector using the Cycling Excitation Process (CEP) for signal amplification. This can be realized in a heavily doped and highly compensated Si p-n junction, showing ultra high gain about 3000 at very low bias (<4 V), and possessing an intrinsic, phonon-mediated regulation process to keep the device stable without any quenching device required in today's Geiger-mode avalanche detectors. The CEP can be formulated with the rate equations in conduction bands and impurity states. The gain expression, which is a function of the

  5. Avalanche photodiodes for ISABELLE detectors

    International Nuclear Information System (INIS)

    Strand, R.C.

    1979-01-01

    At ISABELLE some requirements for detecting bursts of photons are not met by standard photomultiplier tubes. The characteristics of immunity to magnetic fields, small size (few mm), low power consumption (approx. 100 mW), insensitivity to optical overloads, and wide dynamic range (approx. 60 dB) are achieved with difficulty, if at all, with PMTs. These are characteristics of the solid state avalanche photodiode (APD), the preferred detector for light-wave communications. Successful field tests with APD detectors stimulated the design of standard optical-fiber communication systems to replace wire carriers by the early 1980's. In other characteristics, i.e., counting rate, pulse-height resolution, effective quantum efficiency, detection efficiency, and reliability, bare APDs are equivalent to standard PMTs. APDs with currently available amplifiers cannot resolve single photoelectrons but they could provide reasonable detection efficiencies and pulse-height resolution for packets of approx. > 100 photons. Commercially available APDs can cost up to 100 times as much as PMTs per active area, but they are potentially much cheaper. Six topics are discussed: (1) detectors for light-wave communication and detectors for particles, (2) avalanche photodiodes, (3) commercially available APDs, (4) dynamic response of PMTs and bare APDs, (5) photon counting with cold APDs, and (6) conclusions and recommendations

  6. Multiwire proportional chamber and multistage avalanche chamber with low concentration photoionization gas

    International Nuclear Information System (INIS)

    Zhao Pingde; Xu Zhiqing; Tang Xiaowei

    1986-01-01

    The characteristics of multiwire proportional chamber and multistage avalanche chamber filled with argon and photoionization gas (C 2 H 5 ) 3 N were measured. The spatial resolution curves and output pulse height spectra were measured as well. Low concentration (C 2 H 5 ) 3 N can play an effective part in quenching. At very low concentration, the phenomena of avalanche transverse expansion was observed obviously

  7. The Vaigat Rock Avalanche Laboratory, west-central Greenland

    Science.gov (United States)

    Dunning, S.; Rosser, N. J.; Szczucinski, W.; Norman, E. C.; Benjamin, J.; Strzelecki, M.; Long, A. J.; Drewniak, M.

    2013-12-01

    Rock avalanches have unusually high mobility and pose both an immediate hazard, but also produce far-field impacts associated with dam breach, glacier collapse and where they run-out into water, tsunami. Such secondary hazards can often pose higher risks than the original landslide. The prediction of future threats posed by potential rock avalanches is heavily reliant upon understanding of the physics derived from an interpretation of deposits left by previous events, yet drawing comparisons between multiple events is normally challenging as interactions with complex mountainous terrain makes deposits from each event unique. As such numerical models and the interpretation of the underlying physics which govern landslide mobility is commonly case-specific and poorly suited to extrapolation beyond the single events the model is tuned to. Here we present a high-resolution LiDAR and hyperspectral dataset captured across a unique cluster of large rock avalanche source areas and deposits in the Vaigat straight, west central Greenland. Vaigat offers the unprecedented opportunity to model a sample of > 15 rock avalanches of various age sourced from an 80 km coastal escarpment. At Vaigat many of the key variables (topography, geology, post-glacial history) are held constant across all landslides providing the chance to investigate the variations in dynamics and emplacement style related to variable landslide volume, drop-heights, and thinning/spreading over relatively simple, unrestricted run-out zones both onto land and into water. Our data suggest that this region represents excellent preservation of landslide deposits, and hence is well suited to calibrate numerical models of run out dynamics. We use this data to aid the interpretation of deposit morphology, structure lithology and run-out characteristics in more complex settings. Uniquely, we are also able to calibrate our models using a far-field dataset of well-preserved tsunami run-up deposits, resulting from the 21

  8. A method to harness global crowd-sourced data to understand travel behavior in avalanche terrain.

    Science.gov (United States)

    Hendrikx, J.; Johnson, J.

    2015-12-01

    To date, most studies of the human dimensions of decision making in avalanche terrain has focused on two areas - post-accident analysis using accident reports/interviews and, the development of tools as decision forcing aids. We present an alternate method using crowd-sourced citizen science, for understanding decision-making in avalanche terrain. Our project combines real-time GPS tracking via a smartphone application, with internet based surveys of winter backcountry users as a method to describe and quantify travel practices in concert with group decision-making dynamics, and demographic data of participants during excursions. Effectively, we use the recorded GPS track taken within the landscape as an expression of the decision making processes and terrain usage by the group. Preliminary data analysis shows that individual experience levels, gender, avalanche hazard, and group composition all influence the ways in which people travel in avalanche terrain. Our results provide the first analysis of coupled real-time GPS tracking of the crowd while moving in avalanche terrain combined with psychographic and demographic correlates. This research will lead to an improved understanding of real-time decision making in avalanche terrain. In this paper we will specifically focus on the presentation of the methods used to solicit, and then harness the crowd to obtain data in a unique and innovative application of citizen science where the movements within the terrain are the desired output data (Figure 1). Figure 1: Example GPS tracks sourced from backcountry winter users in the Teton Pass area (Wyoming), from the 2014-15 winter season, where tracks in red represent those recorded as self-assessed experts (as per our survey), and where tracks in blue represent those recorded as self-assessed intermediates. All tracks shown were obtained under similar avalanche conditions. Statistical analysis of terrain metrics showed that the experts used steeper terrain than the

  9. Photoluminescence studies on porous silicon/polymer heterostructure

    International Nuclear Information System (INIS)

    Mishra, J.K.; Bhunia, S.; Banerjee, S.; Banerji, P.

    2008-01-01

    Hybrid devices formed by filling porous silicon with MEH-PPV or poly [2-methoxy-5(2-ethylhexyloxy-p-phenylenevinylene)] have been investigated in this work. Analyses of the structures by scanning electron microscopy (SEM) demonstrated that the porous silicon layer was filled by the polymer with no significant change of the structures except that the polymer was infiltrated in the pores. The photoluminescence (PL) of the structures at 300 K showed that the emission intensity was very high as compared with that of the MEH-PPV films on different substrates such as crystalline silicon (c-Si) and indium tin oxide (ITO). The PL peak in the MEH-PPV/porous silicon composite structure is found to be shifted towards higher energy in comparison with porous silicon PL. A number of possibilities are discussed to explain the observations

  10. Polarization Control for Silicon Photonic Circuits

    Science.gov (United States)

    Caspers, Jan Niklas

    In recent years, the field of silicon photonics has received much interest from researchers and companies across the world. The idea is to use photons to transmit information on a computer chip in order to increase computational speed while decreasing the power required for computation. To allow for communication between the chip and other components, such as the computer memory, these silicon photonics circuits need to be interfaced with optical fiber. Unfortunately, in order to interface an optical fiber with an integrated photonics circuit two major challenges need to be overcome: a mode-size mismatch as well as a polarization mismatch. While the problem of mode-size has been well investigated, the polarization mismatch has yet to be addressed. In order to solve the polarization mismatch one needs to gain control over the polarization of the light in a waveguide. In this thesis, I will present the components required to solve the polarization mismatch. Using a novel wave guiding structure, the hybrid plasmonic waveguide, an ultra-compact polarization rotator is designed, fabricated, and tested. The hybrid plasmonic rotator has a performance similar to purely dielectric rotators while being more than an order of magnitude smaller. Additionally, a broadband hybrid plasmonic coupler is designed and measured. This coupler has a performance similar to dielectric couplers while having a footprint an order of magnitude smaller. Finally, a system solution to the polarization mismatch is provided. The system, a polarization adapter, matches the incoming changing polarization from the fiber actively to the correct one of the silicon photonics circuit. The polarization adapter is demonstrated experimentally to prove its operation. This proof is based on dielectric components, but the aforementioned hybrid plasmonic waveguide components would make the system more compact.

  11. Sol-gel Process in Preparation of Organic-inorganic Hybrid Materials

    Directory of Open Access Journals (Sweden)

    Macan, J

    2008-07-01

    Full Text Available Organic-inorganic hybrid materials are a sort of nanostructured material in which the organic and inorganic phases are mixed at molecular level. The inorganic phase in hybrid materials is formed by the sol-gel process, which consists of reactions of hydrolysis and condensation of metal (usually silicon alkoxides. Flexibility of sol-gel process enables creation of hybrid materials with varying organic and inorganic phases in different ratios, and consequently fine-tuning of their properties. In order to obtain true hybrid materials, contact between the phases should be at molecular level, so phase separation between thermodynamically incompatible organic and inorganic phases has to be prevented. Phase interaction can be improved by formation of hydrogen or covalent bonds between them during preparation of hybrid materials. Covalent bond can be introduced by organically modified silicon alkoxides containing a reactive organic group (substituent capable of reacting with the organic phase. In order to obtain hybrid materials with desired structures, a detailed knowledge of hydrolysis and condensation mechanism is necessary. The choice of catalyst, whether acid or base, has the most significant influence on the structure of the inorganic phase. Other important parameters are alkoxide concentration, water: alkoxide ratio, type of alkoxide groups, solvent used, temperature, purity of chemicals used, etc. Hydrolysis and condensation of organically modified silicon alkoxides are additionally influenced by nature and size of the organic supstituent.

  12. Hybrid Silicon-Based Organic/Inorganic Block Copolymers with Sol-Gel Active Moieties: Synthetic Advances, Self-Assembly and Applications in Biomedicine and Materials Science.

    Science.gov (United States)

    Czarnecki, Sebastian; Bertin, Annabelle

    2018-03-07

    Hybrid silicon-based organic/inorganic (multi)block copolymers are promising polymeric precursors to create robust nano-objects and nanomaterials due to their sol-gel active moieties via self-assembly in solution or in bulk. Such nano-objects and nanomaterials have great potential in biomedicine as nanocarriers or scaffolds for bone regeneration as well as in materials science as Pickering emulsifiers, photonic crystals or coatings/films with antibiofouling, antibacterial or water- and oil-repellent properties. Thus, this Review outlines recent synthetic efforts in the preparation of these hybrid inorganic/organic block copolymers, gives an overview of their self-assembled structures and finally presents recent examples of their use in the biomedical field and material science. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Gas sampling calorimeter studies in proportional, saturated avalanche, and streamer modes

    International Nuclear Information System (INIS)

    Atac, M.; Bedeschi, F.; Yoh, J.; Morse, R.; Procario, M.

    1982-01-01

    Recently, satisfactory new results were obtained at SLAC from gas sampling calorimeters running in the saturated avalanche mode within the energy range of 1.5 to 17.5 GeV. To study the higher energy behavior of this mode, more tests were carried out in the M4 beamline at Fermilab. This paper contains results obtained from the MAC prototype electromagnetic and hadronic calorimeters running in the proportional, saturated avalanche, and the streamer regions for energies between 12 and 150 GeV

  14. Development of Ultra-Fast Silicon Detectors for 4D tracking

    Science.gov (United States)

    Staiano, A.; Arcidiacono, R.; Boscardin, M.; Dalla Betta, G. F.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Ficorella, F.; Mandurrino, M.; Obertino, M.; Pancheri, L.; Paternoster, G.; Sola, V.

    2017-12-01

    In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 μm thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

  15. Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

    Directory of Open Access Journals (Sweden)

    Gammon P.M.

    2017-01-01

    Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

  16. Athermal avalanche in bilayer superconducting nanowire single-photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Verma, V. B., E-mail: verma@nist.gov; Lita, A. E.; Stevens, M. J.; Mirin, R. P.; Nam, S. W. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

    2016-03-28

    We demonstrate that two superconducting nanowires separated by a thin insulating barrier can undergo an avalanche process. In this process, Joule heating caused by a photodetection event in one nanowire and the associated production of athermal phonons which are transmitted through the barrier cause the transition of the adjacent nanowire from the superconducting to the normal state. We show that this process can be utilized in the fabrication of superconducting nanowire single photon detectors to improve the signal-to-noise ratio, reduce system jitter, maximize device area, and increase the external efficiency over a very broad range of wavelengths. Furthermore, the avalanche mechanism may provide a path towards a superconducting logic element based on athermal gating.

  17. Oscillatory regime of avalanche particle detectors

    International Nuclear Information System (INIS)

    Lukin, K.A.; Cerdeira, H.A.; Colavita, A.A.

    1995-06-01

    We describe the model of an avalanche high energy particle detector consisting of two pn-junctions, connected through an intrinsic semiconductor with a reverse biased voltage applied. We show that this detector is able to generate the oscillatory response on the single particle passage through the structure. The possibility of oscillations leading to chaotic behaviour is pointed out. (author). 15 refs, 7 figs

  18. A study of timing properties of Silicon Photomultipliers

    Science.gov (United States)

    Avella, Paola; De Santo, Antonella; Lohstroh, Annika; Sajjad, Muhammad T.; Sellin, Paul J.

    2012-12-01

    Silicon Photomultipliers (SiPMs) are solid-state pixelated photodetectors. Lately these sensors have been investigated for Time of Flight Positron Emission Tomography (ToF-PET) applications, where very good coincidence time resolution of the order of hundreds of picoseconds imply spatial resolution of the order of cm in the image reconstruction. The very fast rise time typical of the avalanche discharge improves the time resolution, but can be limited by the readout electronics and the technology used to construct the device. In this work the parameters of the equivalent circuit of the device that directly affect the pulse shape, namely the quenching resistance and capacitance and the diode and parasitic capacitances, were calculated. The mean rise time obtained with different preamplifiers was also measured.

  19. Smartphone applications for communicating avalanche risk information - a review of existing practices

    Science.gov (United States)

    Charrière, M. K. M.; Bogaard, T. A.

    2015-11-01

    Every year, in all mountainous regions, people are victims of avalanches. One way to decrease those losses is believed to be informing about danger levels. The paper presents a study on current practices in the development of smartphones applications that are dedicated to avalanche risk communication. The analysis based on semi-structured interviews with developers of smartphone apps highlights the context of their development, how choices of content and visualization were made as well as how their effectiveness is evaluated. It appears that although the communicators agree on the message to disseminate, its representation triggers debate. Moreover, only simple evaluation processes are conducted but there is a clear awareness that further scientific efforts are needed to analyze the effectiveness of the smartphone apps. Finally, the current or planned possibility for non-experts users to report feedback on the snow and avalanches conditions open the doors to a transition of these apps from one-way communication tools to two-ways communication platforms. This paper also indicates the remaining challenges that avalanche risk communication is facing, although it is disputably the most advanced and standardized practice compared to other natural hazards. Therefore, this research is of interest for the entire field of natural hazards related risk communication.

  20. Low-energy-consumption hybrid lasers for silicon photonics

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Ran, Qijiang; Mørk, Jesper

    2012-01-01

    Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed.......Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed....

  1. Study of an avalanche-mode resistive plate chamber

    International Nuclear Information System (INIS)

    Ying, J.; Ban, Y.; Liu, H.T.; Zhu, Z.M.; Zhu, Z.Y.; Chen, T.; Ma, J.G.; Ye, Y.L.

    2000-01-01

    Resistive plate chambers (RPCs) are widely used to detect high-energy charged particles, especially muons, due to the high gain, moderate time and spatial resolution, simple design and low cost of these detectors. While the simple streamer mode is adequate for cosmic-ray and low-rate accelerator experiments, the avalanche mode is required for high-rate experiments such as CMS at LHC. In this paper construction of a medium-sized double-gap RPC made of Chinese materials is reported. The experimental set-up of cosmic-ray and muon beam tests are introduced. The avalanche mode was clearly observed. Good efficiency and time resolution were obtained from the beam test at CERN under normal irradiation conditions. At very high radiation background the chamber efficiency decreases, indicating the necessity to change the resistivity value of the Chinese bakelites. (author)

  2. Parameters of an avalanche of runaway electrons in air under atmospheric pressure

    Science.gov (United States)

    Oreshkin, E. V.

    2018-01-01

    The features of runaway-electron avalanches developing in air under atmospheric pressures are investigated in the framework of a three-dimensional numerical simulation. The simulation results indicate that an avalanche of this type can be characterized, besides the time and length of its exponential growth, by the propagation velocity and by the average kinetic energy of the runaway electrons. It is shown that these parameters obey the similarity laws applied to gas discharges.

  3. Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

    International Nuclear Information System (INIS)

    Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

    1989-05-01

    Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs

  4. High-performance silicon nanowire bipolar phototransistors

    Science.gov (United States)

    Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

    2016-07-01

    Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

  5. CMOS-based avalanche photodiodes for direct particle detection

    International Nuclear Information System (INIS)

    Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

    2007-01-01

    Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

  6. Effect of Silicon Nitride Balls and Rollers on Rolling Bearing Life

    Science.gov (United States)

    Zaretsky, Erwin V.; Vlcek, Brian L.; Hendricks, Robert C.

    2005-01-01

    Three decades have passed since the introduction of silicon nitride rollers and balls into conventional rolling-element bearings. For a given applied load, the contact (Hertz) stress in a hybrid bearing will be higher than an all-steel rolling-element bearing. The silicon nitride rolling-element life as well as the lives of the steel races were used to determine the resultant bearing life of both hybrid and all-steel bearings. Life factors were determined and reported for hybrid bearings. Under nominal operating speeds, the resultant calculated lives of the deep-groove, angular-contact, and cylindrical roller hybrid bearings with races made of post-1960 bearing steel increased by factors of 3.7, 3.2, and 5.5, respectively, from those calculated using the Lundberg-Palmgren equations. An all-steel bearing under the same load will have a longer life than the equivalent hybrid bearing under the same conditions. Under these conditions, hybrid bearings are predicted to have a lower fatigue life than all-steel bearings by 58 percent for deep-groove bearings, 41 percent for angular-contact bearings, and 28 percent for cylindrical roller bearings.

  7. Modified porous silicon for electrochemical sensor of para-nitrophenol

    International Nuclear Information System (INIS)

    Belhousse, S.; Belhaneche-Bensemra, N.; Lasmi, K.; Mezaache, I.; Sedrati, T.; Sam, S.; Tighilt, F.-Z.; Gabouze, N.

    2014-01-01

    Highlights: • Hybrid device based on Porous silicon (PSi) and polythiophene (PTh) was prepared. • Three types of PSi/PTh hybrid structures were elaborated: PSi/PTh, oxide/PSi/PTh and Amino-propyltrimethoxysilane (APTMES)/oxide/PSi/PTh. • PTh was grafted on PSi using electrochemical polymerization. • The electrodetection of para-nitrophenol (p-NPh) was performed by cyclic voltammetry. • Oxide/PSi/PTh and APTMES/oxide/PSi/PTh, based electrochemical sensor showed a good response toward p-NPh. - Abstract: Hybrid structures based on polythiophene modified porous silicon was used for the electrochemical detection of para-nitrophenol, which is a toxic derivative of parathion insecticide and it is considered as a major toxic pollutant. The porous silicon was prepared by anodic etching in hydrofluodic acid. Polythiophene films were then grown by electropolymerisation of thiophene monomer on three different surfaces: hydrogenated PSi, oxidized PSi and amine-terminated PSi. The morphology of the obtained structures were observed by scanning electron microscopy and characterized by spectroscopy (FTIR). Cyclic voltammetry was used to study the electrochemical response of proposed structures to para-nitrophenol. The results show a high sensitivity of the sensor and a linearity of the electrochemical response in a large concentration interval ranging from 1.5 × 10 −8 M to the 3 × 10 −4 M

  8. Generation and manipulation of entangled photons on silicon chips

    Directory of Open Access Journals (Sweden)

    Matsuda Nobuyuki

    2016-08-01

    Full Text Available Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

  9. Enhanced UV photoresponse of KrF-laser-synthesized single-wall carbon nanotubes/n-silicon hybrid photovoltaic devices.

    Science.gov (United States)

    Le Borgne, V; Gautier, L A; Castrucci, P; Del Gobbo, S; De Crescenzi, M; El Khakani, M A

    2012-06-01

    We report on the KrF-laser ablation synthesis, purification and photocurrent generation properties of single-wall carbon nanotubes (SWCNTs). The thermally purified SWCNTs are integrated into hybrid photovoltaic (PV) devices by spin-coating them onto n-Si substrates. These novel SWCNTs/n-Si hybrid devices are shown to generate significant photocurrent (PC) over the entire 250-1050 nm light spectrum with external quantum efficiencies (EQE) reaching up to ~23%. Our SWCNTs/n-Si hybrid devices are not only photoactive in the traditional spectral range of Si solar cells, but generate also significant PC in the UV domain (below 400 nm). This wider spectral response is believed to be the result of PC generation from both the SWCNTs themselves and the tremendous number of local p-n junctions created at the nanotubes/Si interface. To assess the prevalence of these two contributions, the EQE spectra and J-V characteristics of these hybrid devices were investigated in both planar and top-down configurations, as a function of SWCNTs' film thickness. A sizable increase in EQE in the near UV with respect to the silicon is observed in both configurations, with a more pronounced UV photoresponse in the planar mode, confirming thereby the role of SWCNTs in the photogeneration process. The PC generation is found to reach its maximum for an optimal the SWCNT film thickness, which is shown to correspond to the best trade-off between lowest electrical resistance and highest optical transparency. Finally, by analyzing the J-V characteristics of our SWCNTs/n-Si devices with an equivalent circuit model, we were able to point out the contribution of the various electrical components involved in the photogeneration process. The SWCNTs-based devices demonstrated here open up the prospect for their use in highly effective photovoltaics and/or UV-light sensors.

  10. Graphene oxide-Ag nanoparticles-pyramidal silicon hybrid system for homogeneous, long-term stable and sensitive SERS activity

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jia [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Xu, Shicai [Shandong Provincial Key Laboratory of Biophysics, College of Physics and Electronic Information, Dezhou University, Dezhou 253023 (China); Liu, Xiaoyun; Li, Zhe; Hu, Litao; Li, Zhen; Chen, Peixi; Ma, Yong [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Jiang, Shouzhen, E-mail: jiang_sz@126.com [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Shandong Provincial Key Laboratory of Optics and Photonic Device, Jinan 250014 (China); Ning, Tingyin [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Shandong Provincial Key Laboratory of Optics and Photonic Device, Jinan 250014 (China)

    2017-02-28

    Highlights: • We directly grown AgNPs on substrate by annealing method in the quartz tube. Compare with spin-coating Ag nanoparticles solution method, we got more uniform distribution of AgNPs and the AgNPs better adsorption on the substrate. • We use a simple and lost-cost method to obtain the pyramidal silicon (PSi). The PSi possessing well-separated pyramid arrays can make contribution to the homogeneity and sensitivity of the substrate. • In our work, graphene oxide (GO) film is uniformly deposited on AgNPs and PSi by using a spin-coating method. The GO films endow the hybrid system a good stability and enhance the homogeneity and sensitivity of the substrate. - Abstract: In our work, few layers graphene oxide (GO) were directly synthesized on Ag nanoparticles (AgNPs) by spin-coating method to fabricate a GO-AgNPs hybrid structure on a pyramidal silicon (PSi) substrate for surface-enhanced Raman scattering (SERS). The GO-AgNPs-PSi substrate showed excellent Raman enhancement effect, the minimum detected concentration for Rhodamine 6G (R6G) can reach 10{sup −12} M, which is one order of magnitude lower than the AgNPs-PSi substrate and two order of magnitude lower than the GO-AgNPs-flat-Si substrate. The linear fit calibration curve with error bars is presented and the value of R{sup 2} of 612 and 773 cm{sup −1} can reach 0.986 and 0.980, respectively. The excellent linear response between the Raman intensity and R6G concentrations prove that the prepared GO-AgNPs-PSi substrates can serve as good SERS substrate for molecule detection. The maximum deviations of SERS intensities from 20 positions of the GO-AgNPs-PSi substrate are less than 8%, revealing the high homogeneity of the SERS substrate. The excellent homogeneity of the enhanced Raman signals can be attributed to well-separated pyramid arrays of PSi, the uniform morphology of AgNPs and multi-functions of GO layer. Besides, the uniform GO film can effectively protect AgNPs from oxidation and endow

  11. A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology

    Directory of Open Access Journals (Sweden)

    Preethi Padmanabhan

    2018-02-01

    Full Text Available Gallium nitride (GaN and its alloys are becoming preferred materials for ultraviolet (UV detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs, implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e−, obtaining avalanche gains up to 103. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology.

  12. A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology.

    Science.gov (United States)

    Padmanabhan, Preethi; Hancock, Bruce; Nikzad, Shouleh; Bell, L Douglas; Kroep, Kees; Charbon, Edoardo

    2018-02-03

    Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e - , obtaining avalanche gains up to 10³. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology.

  13. Hybrid electrolytes based on ionic liquids and amorphous porous silicon nanoparticles: Organization and electrochemical properties

    KAUST Repository

    Tchalala, Mohammed; El Demellawi, Jehad K.; Abou-Hamad, Edy; Duran Retamal, Jose Ramon; Varadhan, Purushothaman; He, Jr-Hau; Chaieb, Saharoui

    2017-01-01

    Ionic liquids (ILs) and ionic liquid-nanoparticle (IL-NP) hybrid electrolytes have garnered a lot of interest due to their unique properties that stimulate their use in various applications. Herein, we investigate the electrochemical and photo-physical properties of organic-inorganic hybrid electrolytes based on three imidazolium-based ionic liquids, i.e., 1-buthyl-3-methylimidazolium thiocyanate ([bmim] [SCN]), 1-ethyl-3-methylimidazolium tetrafluoroborate ([emim] [BF4]) and 1-buthyl-3-methylimidazolium acetate ([bmim] [Ac]) that are covalently tethered to amorphous porous silicon nanoparticles (ap-Si NPs). We found that the addition of ap-Si NPs confer to the ILs a pronounced boost in the electrocatalytic activity, and in mixtures of ap-Si NPs and [bmim] [SCN], the room-temperature current transport is enhanced by more than 5 times compared to bare [bmim] [SCN]. A detailed structural investigation by transmission electron microscope (TEM) showed that the ap-Si NPs were well dispersed, stabilized and highly aggregated in [bmim] [SCN], [emim] [BF4] and [bmim] [Ac] ILs, respectively. These observations correlate well with the enhanced current transport observed in ap-Si NPs/[bmim] [SCN] evidenced by electrochemical measurements. We interpreted these observations by the use of UV–vis absorbance, photoluminescence (PL), FTIR and solid-state NMR spectroscopy. We found that the ap-Si NPs/[bmim] [SCN] hybrid stands out due to its stability and optical transparency. This behavior is attributed to the iron(III) thiocyanate complexion as per the experimental findings. Furthermore, we found that the addition of NPs to [emim] [BF4] alters the equilibrium of the IL, which consequently improved the stability of the NPs through intermolecular interactions with the two ionic layers (anionic and cationic layers) of the IL. While in the case of [bmim] [Ac], the dispersion of ap-Si NPs was restrained because of the high viscosity of this IL.

  14. Hybrid electrolytes based on ionic liquids and amorphous porous silicon nanoparticles: Organization and electrochemical properties

    KAUST Repository

    Tchalala, Mohammed

    2017-05-06

    Ionic liquids (ILs) and ionic liquid-nanoparticle (IL-NP) hybrid electrolytes have garnered a lot of interest due to their unique properties that stimulate their use in various applications. Herein, we investigate the electrochemical and photo-physical properties of organic-inorganic hybrid electrolytes based on three imidazolium-based ionic liquids, i.e., 1-buthyl-3-methylimidazolium thiocyanate ([bmim] [SCN]), 1-ethyl-3-methylimidazolium tetrafluoroborate ([emim] [BF4]) and 1-buthyl-3-methylimidazolium acetate ([bmim] [Ac]) that are covalently tethered to amorphous porous silicon nanoparticles (ap-Si NPs). We found that the addition of ap-Si NPs confer to the ILs a pronounced boost in the electrocatalytic activity, and in mixtures of ap-Si NPs and [bmim] [SCN], the room-temperature current transport is enhanced by more than 5 times compared to bare [bmim] [SCN]. A detailed structural investigation by transmission electron microscope (TEM) showed that the ap-Si NPs were well dispersed, stabilized and highly aggregated in [bmim] [SCN], [emim] [BF4] and [bmim] [Ac] ILs, respectively. These observations correlate well with the enhanced current transport observed in ap-Si NPs/[bmim] [SCN] evidenced by electrochemical measurements. We interpreted these observations by the use of UV–vis absorbance, photoluminescence (PL), FTIR and solid-state NMR spectroscopy. We found that the ap-Si NPs/[bmim] [SCN] hybrid stands out due to its stability and optical transparency. This behavior is attributed to the iron(III) thiocyanate complexion as per the experimental findings. Furthermore, we found that the addition of NPs to [emim] [BF4] alters the equilibrium of the IL, which consequently improved the stability of the NPs through intermolecular interactions with the two ionic layers (anionic and cationic layers) of the IL. While in the case of [bmim] [Ac], the dispersion of ap-Si NPs was restrained because of the high viscosity of this IL.

  15. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

  16. Performance of hybrid photon detector prototypes with encapsulated silicon pixel detector and readout for the RICH counters of LHCb

    International Nuclear Information System (INIS)

    Campbell, M.; George, K.A.; Girone, M.; Gys, T.; Jolly, S.; Piedigrossi, D.; Riedler, P.; Rozema, P.; Snoeys, W.; Wyllie, K.

    2003-01-01

    These proceedings report on the performance of the latest prototype pixel hybrid photon detector in preparation for the LHCb Ring Imaging Cherenkov detectors. The prototype encapsulates a silicon pixel detector bump-bonded to a binary read-out chip with short (25 ns) peaking time and low ( - ) detection threshold. A brief description of the prototype is given, followed by the preliminary results of the characterisation of the prototype behaviour when tested using a low intensity pulsed light emitting diode. The results obtained are in good agreement with those obtained using previous prototypes. The proceedings conclude with a summary of the current status and future plans

  17. Universal Critical Dynamics in High Resolution Neuronal Avalanche Data

    Science.gov (United States)

    Friedman, Nir; Ito, Shinya; Brinkman, Braden A. W.; Shimono, Masanori; DeVille, R. E. Lee; Dahmen, Karin A.; Beggs, John M.; Butler, Thomas C.

    2012-05-01

    The tasks of neural computation are remarkably diverse. To function optimally, neuronal networks have been hypothesized to operate near a nonequilibrium critical point. However, experimental evidence for critical dynamics has been inconclusive. Here, we show that the dynamics of cultured cortical networks are critical. We analyze neuronal network data collected at the individual neuron level using the framework of nonequilibrium phase transitions. Among the most striking predictions confirmed is that the mean temporal profiles of avalanches of widely varying durations are quantitatively described by a single universal scaling function. We also show that the data have three additional features predicted by critical phenomena: approximate power law distributions of avalanche sizes and durations, samples in subcritical and supercritical phases, and scaling laws between anomalous exponents.

  18. Basic opto-electronics on silicon for sensor applications

    NARCIS (Netherlands)

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  19. Double-walled silicon nanotubes: an ab initio investigation

    Science.gov (United States)

    Lima, Matheus P.

    2018-02-01

    The synthesis of silicon nanotubes realized in the last decade demonstrates multi-walled tubular structures consisting of Si atoms in {{sp}}2 and the {{sp}}3 hybridizations. However, most of the theoretical models were elaborated taking as the starting point {{sp}}2 structures analogous to carbon nanotubes. These structures are unfavorable due to the natural tendency of the Si atoms to undergo {{sp}}3. In this work, through ab initio simulations based on density functional theory, we investigated double-walled silicon nanotubes proposing layered tubes possessing most of the Si atoms in an {{sp}}3 hybridization, and with few {{sp}}2 atoms localized at the outer wall. The lowest-energy structures have metallic behavior. Furthermore, the possibility to tune the band structure with the application of a strain was demonstrated, inducing a metal-semiconductor transition. Thus, the behavior of silicon nanotubes differs significantly from carbon nanotubes, and the main source of the differences is the distortions in the lattice associated with the tendency of Si to make four chemical bonds.

  20. Cherenkov luminescence measurements with digital silicon photomultipliers: a feasibility study

    Energy Technology Data Exchange (ETDEWEB)

    Ciarrocchi, Esther; Belcari, Nicola; Guerra, Alberto Del [Department of Physics, University of Pisa, Pisa (Italy); INFN, section of Pisa, Pisa (Italy); Cherry, Simon R. [Department of Biomedical Engineering, University of California, Davis, CA (United States); Lehnert, Adrienne; Hunter, William C. J.; McDougald, Wendy; Miyaoka, Robert S.; Kinahan, Paul E. [Department of Radiology, University of Washington, Seattle, WA (United States)

    2015-11-16

    A feasibility study was done to assess the capability of digital silicon photomultipliers to measure the Cherenkov luminescence emitted by a β source. Cherenkov luminescence imaging (CLI) is possible with a charge coupled device (CCD) based technology, but a stand-alone technique for quantitative activity measurements based on Cherenkov luminescence has not yet been developed. Silicon photomultipliers (SiPMs) are photon counting devices with a fast impulse response and can potentially be used to quantify β-emitting radiotracer distributions by CLI. In this study, a Philips digital photon counting (PDPC) silicon photomultiplier detector was evaluated for measuring Cherenkov luminescence. The PDPC detector is a matrix of avalanche photodiodes, which were read one at a time in a dark count map (DCM) measurement mode (much like a CCD). This reduces the device active area but allows the information from a single avalanche photodiode to be preserved, which is not possible with analog SiPMs. An algorithm to reject the noisiest photodiodes and to correct the measured count rate for the dark current was developed. The results show that, in DCM mode and at (10–13) °C, the PDPC has a dynamic response to different levels of Cherenkov luminescence emitted by a β source and transmitted through an opaque medium. This suggests the potential for this approach to provide quantitative activity measurements. Interestingly, the potential use of the PDPC in DCM mode for direct imaging of Cherenkov luminescence, as a opposed to a scalar measurement device, was also apparent. We showed that a PDPC tile in DCM mode is able to detect and image a β source through its Cherenkov radiation emission. The detector’s dynamic response to different levels of radiation suggests its potential quantitative capabilities, and the DCM mode allows imaging with a better spatial resolution than the conventional event-triggered mode. Finally, the same acquisition procedure and data processing could

  1. Cherenkov luminescence measurements with digital silicon photomultipliers: a feasibility study

    International Nuclear Information System (INIS)

    Ciarrocchi, Esther; Belcari, Nicola; Guerra, Alberto Del; Cherry, Simon R.; Lehnert, Adrienne; Hunter, William C. J.; McDougald, Wendy; Miyaoka, Robert S.; Kinahan, Paul E.

    2015-01-01

    A feasibility study was done to assess the capability of digital silicon photomultipliers to measure the Cherenkov luminescence emitted by a β source. Cherenkov luminescence imaging (CLI) is possible with a charge coupled device (CCD) based technology, but a stand-alone technique for quantitative activity measurements based on Cherenkov luminescence has not yet been developed. Silicon photomultipliers (SiPMs) are photon counting devices with a fast impulse response and can potentially be used to quantify β-emitting radiotracer distributions by CLI. In this study, a Philips digital photon counting (PDPC) silicon photomultiplier detector was evaluated for measuring Cherenkov luminescence. The PDPC detector is a matrix of avalanche photodiodes, which were read one at a time in a dark count map (DCM) measurement mode (much like a CCD). This reduces the device active area but allows the information from a single avalanche photodiode to be preserved, which is not possible with analog SiPMs. An algorithm to reject the noisiest photodiodes and to correct the measured count rate for the dark current was developed. The results show that, in DCM mode and at (10–13) °C, the PDPC has a dynamic response to different levels of Cherenkov luminescence emitted by a β source and transmitted through an opaque medium. This suggests the potential for this approach to provide quantitative activity measurements. Interestingly, the potential use of the PDPC in DCM mode for direct imaging of Cherenkov luminescence, as a opposed to a scalar measurement device, was also apparent. We showed that a PDPC tile in DCM mode is able to detect and image a β source through its Cherenkov radiation emission. The detector’s dynamic response to different levels of radiation suggests its potential quantitative capabilities, and the DCM mode allows imaging with a better spatial resolution than the conventional event-triggered mode. Finally, the same acquisition procedure and data processing could

  2. Optical fibers and avalanche photodiodes for scintillator counters

    International Nuclear Information System (INIS)

    Borenstein, S.R.; Palmer, R.B.; Strand, R.C.

    1980-01-01

    Fine hodoscopes can be made of new scintillating optical fibers and one half inch end-on PMT's. An avalanche photodiode with small size and immunity to magnetic fields remains as a tempting new device to be proven as a photodetector for the fibers

  3. Characterization of midwave infrared InSb avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  4. Positron camera with high-density avalanche chambers

    International Nuclear Information System (INIS)

    Manfrass, D.; Enghardt, W.; Fromm, W.D.; Wohlfarth, D.; Hennig, K.

    1988-01-01

    The results of an extensive investigation of the properties of high-density avalanche chambers (HIDAC) are presented. This study has been performed in order to optimize the layout of HIDAC detectors, since they are intended to be applied as position sensitive detectors for annihilation radiation in a positron emission tomograph being under construction. (author)

  5. Photonic Crystal Sensors Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Claudia Pacholski

    2013-04-01

    Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  6. Photonic Crystal Sensors Based on Porous Silicon

    Science.gov (United States)

    Pacholski, Claudia

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

  7. Developing an Experimental Simulation Method for Rock Avalanches: Fragmentation Behavior of Brittle Analogue Material

    Science.gov (United States)

    Thordén Haug, Øystein; Rosenau, Matthias; Leever, Karen; Oncken, Onno

    2013-04-01

    Gravitational mass movement on earth and other planets show a scale dependent behavior, of which the physics is not fully understood. In particular, the runout distance for small to medium sized landslides (volume dynamics control small and large landslides/rock avalanches. Several mechanisms have been proposed to explain this scale dependent behavior, but no consensus has been reached. Experimental simulations of rock avalanches usually involve transport of loose granular material down a chute. Though such granular avalanche models provide important insights into avalanche dynamics, they imply that the material fully disintegrate instantaneously. Observations from nature, however, suggests that a transition from solid to "liquid" occurs over some finite distance downhill, critically controlling the mobility and energy budget of the avalanche. Few experimental studies simulated more realistically the material failing during sliding and those were realized in a labscale centrifuge, where the range of volumes/scales is limited. To develop a new modeling technique to study the scale dependent runout behavior of rock avalanches, we designed, tested and verified several brittle materials allowing fragmentation to occur under normal gravity conditions. According to the model similarity theory, the analogue material must behave dynamically similar to the rocks in natural rock avalanches. Ideally, the material should therefore deform in a brittle manner with limited elastic and ductile strains up to a certain critical stress, beyond which the material breaks and deforms irreversibly. According to scaling relations derived from dimensional analysis and for a model-to-prototype length ratio of 1/1000, the appropriate yield strength for an analogue material is in the order of 10 kPa, friction coefficient around 0.8 and stiffness in the order of MPa. We used different sand (garnet, quartz) in combination with different matrix materials (sugar, salt, starch, plaster) to cement

  8. Effect of forging on mechanical properties of rice husk ash-silicon carbide reinforced Al1100 hybrid composites

    Science.gov (United States)

    Ghanaraja, S.; Gireesha, B. L.; Ravikumar, K. S.; Likith, P.

    2018-04-01

    During the past few years, material design has changed prominence to pursue light weight, environment friendliness, low cost, quality, higher service temperature, higher elastic modulus, improved wear resistance and performance. Straight monolithic materials have limitations in achieving the above decisive factors. To overcome these limitations and to convince the ever increasing demand of modern day technology, Attention has been shifted towards Metal Matrix Composites (MMC). Stir casting route is most hopeful for synthesizing discontinuous reinforcement aluminium matrix composites because of its relative simplicity and easy adaptability with all shape casting process used in metal casting industry. Hybridization of metal matrix composites is the introduction of more than one type/kind, size and shape of reinforcement during processing of composites. It is carried out to obtain synergistic properties of different reinforcements and matrix used, which may not be rea1ised in monolithic alloy or in conventional monocomposites. The present study involves synthesis of hybrid composites by addition of the desired amount of Silicon Carbide (SiC) and Rice Husk Ash (RHA) particles in to the molten Al 1100-Mg alloy through stir casting technique fallowed by hot forging of the cast composites. The influence of increasing in the wt% (3, 6, 9, 12 and 15 wt%) of SiC particles addition (3 wt% Rice husk ash kept constant) on evolution of microstructure is studied through XRD and SEM and their impact on the mechanical properties like hardness and tensile strength of the resulting forged hybrid composites has been investigated.

  9. Optimization of the digital Silicon Photomultiplier for Cherenkov light detection

    International Nuclear Information System (INIS)

    Frach, T

    2012-01-01

    The Silicon Photomultiplier is a promising alternative to fast vacuum photodetectors. We developed a fully digital implementation of the Silicon Photomultiplier. The sensor is based on a single photon avalanche photodiode (SPAD) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bit memory for the selective inhibit of detector cells. A balanced trigger network is used to propagate the trigger signal from all cells to the integrated time-to-digital converter. Photons are detected and counted as digital signals, thus making the sensor less susceptible to temperature variations and electronic noise. The integration with CMOS logic has the added benefit of low power consumption and possible integration of data post-processing in the sensor. In this paper, we discuss the sensor architecture together with its characteristics, and its possible optimizations for applications requiring the detection of Cherenkov light.

  10. Development of the DC-RF Hybrid Plasma Source and the Application to the Etching and Texturing of the Silicon Surface

    International Nuclear Information System (INIS)

    Kim, Ji Hun

    2011-02-01

    the vacuum chamber for vacuum processing. The experiment was provided on the mono-crystalline silicon wafer. The etching was carried out with plasma consisting of SF 6 (50 sccm) as a reactive etching gas with O 2 (300 sccm) as a supporting gas and Argon (2000 ∼ 3000 sccm) as a cathode protecting gas. Etching rates were 60 μm/min at low pressure (3-5 torr) and 300 μm/min at a atmospheric pressure. The sample was positioned in such as way that the plasma flow axis would coincide with the side facet of the silicon crystal. A texturing process was performed on a crystalline silicon (c-Si) wafer to increase the efficiency of a solar cell by using a high durability DC arc plasma source at atmospheric pressure and low pressure. CF 4 and SF 6 were used as the reactive etching gases at flow rates 2 as the supporting gas in the range of the 5 - 15 %. To survey the characteristics of the pyramid formation process, plasma texturing experiments were performed by varying the working time. The optimal operating conditions of the gas flow (Ar, O 2 , CF 4 , SF 6 ), plasmatron current and processing time were determined. The pyramid angle was approximately 50 .deg. to 60 .deg. when a single-crystalline silicon surface was textured in a vacuum whereas it was approximately 75 .deg. to 90 .deg. when textured at atmospheric pressure. The reflectance decreases with decreasing pyramid angle. The reflectance of the bare silicon ranged from 40 % to the 60 % but that of the textured silicon was approximately 5 % to 20 %. This reflectance is quite low, approximately half that reported by other studies using wet and reactive ion etching (RIE) texturing. Even though DC arc plasmatron has many advantages, it is difficult to apply an industry due to the small applied area. To increase an effective processing area, we suggest a DC-RF hybrid plasma system. The DC-RF hybrid plasma system was designed and made. This system consists of a DC arc plasmatron, RF parts, reaction chamber, power feeder

  11. A new solver for granular avalanche simulation: Indoor experiment verification and field scale case study

    Science.gov (United States)

    Wang, XiaoLiang; Li, JiaChun

    2017-12-01

    A new solver based on the high-resolution scheme with novel treatments of source terms and interface capture for the Savage-Hutter model is developed to simulate granular avalanche flows. The capability to simulate flow spread and deposit processes is verified through indoor experiments of a two-dimensional granular avalanche. Parameter studies show that reduction in bed friction enhances runout efficiency, and that lower earth pressure restraints enlarge the deposit spread. The April 9, 2000, Yigong avalanche in Tibet, China, is simulated as a case study by this new solver. The predicted results, including evolution process, deposit spread, and hazard impacts, generally agree with site observations. It is concluded that the new solver for the Savage-Hutter equation provides a comprehensive software platform for granular avalanche simulation at both experimental and field scales. In particular, the solver can be a valuable tool for providing necessary information for hazard forecasts, disaster mitigation, and countermeasure decisions in mountainous areas.

  12. From silicon to organic nanoparticle memory devices.

    Science.gov (United States)

    Tsoukalas, D

    2009-10-28

    After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

  13. Swedish skiers knowledge, experience and attitudes towards off-piste skiing and avalanches

    OpenAIRE

    Mårtensson, Stefan; Wikberg, Per-Olov; Palmgren, Petter

    2013-01-01

    The winter of 2012/2013 was the most accident-prone season in the Swedish avalanche history with a total of seven dead Swedes. In April 2013 the Swedish Mountain Safety Council initiated a web-based survey aimed towards Swedish skiers. The aim was to identify the target group's knowledge, experience and attitudes towards off-piste skiing and avalanches. Respondents were asked to answer a total of 28 questions. 1047 Swedish off-piste skiers answered, and we analysed them in more detail. The Sw...

  14. Analysis of the snow-atmosphere energy balance during wet-snow instabilities and implications for avalanche prediction

    Directory of Open Access Journals (Sweden)

    C. Mitterer

    2013-02-01

    Full Text Available Wet-snow avalanches are notoriously difficult to predict; their formation mechanism is poorly understood since in situ measurements representing the thermal and mechanical evolution are difficult to perform. Instead, air temperature is commonly used as a predictor variable for days with high wet-snow avalanche danger – often with limited success. As melt water is a major driver of wet-snow instability and snow melt depends on the energy input into the snow cover, we computed the energy balance for predicting periods with high wet-snow avalanche activity. The energy balance was partly measured and partly modelled for virtual slopes at different elevations for the aspects south and north using the 1-D snow cover model SNOWPACK. We used measured meteorological variables and computed energy balance and its components to compare wet-snow avalanche days to non-avalanche days for four consecutive winter seasons in the surroundings of Davos, Switzerland. Air temperature, the net shortwave radiation and the energy input integrated over 3 or 5 days showed best results in discriminating event from non-event days. Multivariate statistics, however, revealed that for better predicting avalanche days, information on the cold content of the snowpack is necessary. Wet-snow avalanche activity was closely related to periods when large parts of the snowpack reached an isothermal state (0 °C and energy input exceeded a maximum value of 200 kJ m−2 in one day, or the 3-day sum of positive energy input was larger than 1.2 MJ m−2. Prediction accuracy with measured meteorological variables was as good as with computed energy balance parameters, but simulated energy balance variables accounted better for different aspects, slopes and elevations than meteorological data.

  15. Neuronal avalanches and learning

    Energy Technology Data Exchange (ETDEWEB)

    Arcangelis, Lucilla de, E-mail: dearcangelis@na.infn.it [Department of Information Engineering and CNISM, Second University of Naples, 81031 Aversa (Italy)

    2011-05-01

    Networks of living neurons represent one of the most fascinating systems of biology. If the physical and chemical mechanisms at the basis of the functioning of a single neuron are quite well understood, the collective behaviour of a system of many neurons is an extremely intriguing subject. Crucial ingredient of this complex behaviour is the plasticity property of the network, namely the capacity to adapt and evolve depending on the level of activity. This plastic ability is believed, nowadays, to be at the basis of learning and memory in real brains. Spontaneous neuronal activity has recently shown features in common to other complex systems. Experimental data have, in fact, shown that electrical information propagates in a cortex slice via an avalanche mode. These avalanches are characterized by a power law distribution for the size and duration, features found in other problems in the context of the physics of complex systems and successful models have been developed to describe their behaviour. In this contribution we discuss a statistical mechanical model for the complex activity in a neuronal network. The model implements the main physiological properties of living neurons and is able to reproduce recent experimental results. Then, we discuss the learning abilities of this neuronal network. Learning occurs via plastic adaptation of synaptic strengths by a non-uniform negative feedback mechanism. The system is able to learn all the tested rules, in particular the exclusive OR (XOR) and a random rule with three inputs. The learning dynamics exhibits universal features as function of the strength of plastic adaptation. Any rule could be learned provided that the plastic adaptation is sufficiently slow.

  16. Neuronal avalanches and learning

    International Nuclear Information System (INIS)

    Arcangelis, Lucilla de

    2011-01-01

    Networks of living neurons represent one of the most fascinating systems of biology. If the physical and chemical mechanisms at the basis of the functioning of a single neuron are quite well understood, the collective behaviour of a system of many neurons is an extremely intriguing subject. Crucial ingredient of this complex behaviour is the plasticity property of the network, namely the capacity to adapt and evolve depending on the level of activity. This plastic ability is believed, nowadays, to be at the basis of learning and memory in real brains. Spontaneous neuronal activity has recently shown features in common to other complex systems. Experimental data have, in fact, shown that electrical information propagates in a cortex slice via an avalanche mode. These avalanches are characterized by a power law distribution for the size and duration, features found in other problems in the context of the physics of complex systems and successful models have been developed to describe their behaviour. In this contribution we discuss a statistical mechanical model for the complex activity in a neuronal network. The model implements the main physiological properties of living neurons and is able to reproduce recent experimental results. Then, we discuss the learning abilities of this neuronal network. Learning occurs via plastic adaptation of synaptic strengths by a non-uniform negative feedback mechanism. The system is able to learn all the tested rules, in particular the exclusive OR (XOR) and a random rule with three inputs. The learning dynamics exhibits universal features as function of the strength of plastic adaptation. Any rule could be learned provided that the plastic adaptation is sufficiently slow.

  17. Towards hybrid heterojunction silicon solar cells with organic charge carrier selective contacts

    OpenAIRE

    Jäckle, Sara Lisa

    2017-01-01

    Photovoltaic is an essential part of the needed global transition towards renewable energies. Even though many materials have good absorption and energy conversion properties, the market is dominated by technologies based on crystalline silicon. Silicon has the advantage of being neither toxic nor rare on earth and it is very well investigated due to its extensive use in microelectronics. The best power conversion efficiencies of silicon solar cells and modules are achieved by sophisticated d...

  18. Recalculation of an artificially released avalanche with SAMOS and validation with measurements from a pulsed Doppler radar

    Directory of Open Access Journals (Sweden)

    R. Sailer

    2002-01-01

    Full Text Available A joint experiment was carried out on 10 February 1999 by the Swiss Federal Institute for Snow and Avalanche Research (SFISAR and the Austrian Institute for Avalanche and Torrent Research (AIATR, of the Federal Office and Re-search Centre for Forests, BFW to measure forces and velocities at the full scale experimental site CRÊTA BESSE in VALLÉE DE LA SIONNE, Canton du Valais, Switzerland. A huge avalanche could be released artificially, which permitted extensive investigations (dynamic measurements, im-provement of measurement systems, simulation model verification, design of protective measures, etc.. The results of the velocity measurements from the dual frequency pulsed Doppler avalanche radar of the AIATR and the recalculation with the numerical simulation model SAMOS are explained in this paper.

  19. Plasma simulation of electron avalanche in a linear thyratron

    International Nuclear Information System (INIS)

    Kushner, M.J.

    1985-01-01

    Thyratrons typically operate at sufficiently small PD (pressure x electrode separation) that holdoff is obtained by operating on the near side of the Paschen curve, and by shielding the slot in the control grid so there is no straight line path for electrons to reach the anode from the cathode. Electron avalanche is initiated by pulsing the control grid to a high voltage. Upon collapse of voltage in the cathode-control grid space, the discharge is sustained by penetration of potential through the control grid slot into the cathode-control grid region. To better understand the electron avalanche process in multi-grid and slotted structures such as thyratrons, a plasma simulation code has been constructed. This effort is in support of a companion program in which a linear thyratron is being electrically and spectroscopically characterized

  20. Research and development on a sub 100 PICO second time-of-flight system based on silicon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Y.; Hirsch, A.; Hauger, A.; Scharenberg, R.; Tincknell, M. [Purdue Univ., West Lafayette, IN (United States); Rai, G. [Lawrence Berkeley Lab., CA (United States)

    1991-12-31

    Particle identification requires a momentum measurement and a second independent determination either energy loss (dE/dx) or time of flight (TOF). To cover a momentum range from 0.1 GeV/c to 1.5 GeV/c in the STAR detector requires both the dE/dx and TOF techniques. This research is designed to develop the avalanche diode (AVD) detectors for TOF systems and evaluate their performance. The test of a small prototype system would be carried out at Purdue and at accelerator test beam sites. The Purdue group has developed a complete test setup for evaluating the time resolution of the AVD`s which includes fast-slow electronic channels, CAMAC based electronic modules and a temperature controlled environment. The AVDs also need to be tested in a 0.5 tesla magnetic field. The Purdue group would augment this test set up to include a magnetic field.

  1. A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology †

    Science.gov (United States)

    Hancock, Bruce; Nikzad, Shouleh; Bell, L. Douglas; Kroep, Kees; Charbon, Edoardo

    2018-01-01

    Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e−, obtaining avalanche gains up to 103. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology. PMID:29401655

  2. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Development of application type novel-structure thin-film solar cell manufacturing technology - Development of amorphous silicon/thin-film polycrystalline silicon hybrid thin-film solar cell manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu / amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The project aims to manufacture the above for the development of low-cost high-efficiency practical cells. Technologies were developed to homogeneously fabricate films with an average efficiency of 10% or more in a 100mm times 85mm area in a STAR (naturally surface texture and enhanced absorption with a back reflector) structure thin-film polycrystalline silicon (poly-Si) solar cell. The texture shape was improved for a higher light trapping effect and a STAR structure cell highly sensitive to long wavelengths and fit for use for a hybrid cell bottom layer was obtained. Various cells were examined for temperature characteristics, and it was found that thin-film poly-Si cells present a temperature coefficient equal to or less than that of bulk single-crystal silicon systems, and hybrid cells a temperature coefficient similar to that of a-Si systems. The technology was applied to a hybrid solar cell in which an a-Si cell was placed on STAR structure thin film poly-Si cells, and a resultant 3-layer a-Si/poly-Si/poly-Si cell exhibited a stabilization factor of 12.0% after 550 hours of optical irradiation. (NEDO)

  3. High Dynamic Range Imaging at the Quantum Limit with Single Photon Avalanche Diode-Based Image Sensors †

    Science.gov (United States)

    Mattioli Della Rocca, Francescopaolo

    2018-01-01

    This paper examines methods to best exploit the High Dynamic Range (HDR) of the single photon avalanche diode (SPAD) in a high fill-factor HDR photon counting pixel that is scalable to megapixel arrays. The proposed method combines multi-exposure HDR with temporal oversampling in-pixel. We present a silicon demonstration IC with 96 × 40 array of 8.25 µm pitch 66% fill-factor SPAD-based pixels achieving >100 dB dynamic range with 3 back-to-back exposures (short, mid, long). Each pixel sums 15 bit-planes or binary field images internally to constitute one frame providing 3.75× data compression, hence the 1k frames per second (FPS) output off-chip represents 45,000 individual field images per second on chip. Two future projections of this work are described: scaling SPAD-based image sensors to HDR 1 MPixel formats and shrinking the pixel pitch to 1–3 µm. PMID:29641479

  4. Disorder Improves Light Absorption in Thin Film Silicon Solar Cells with Hybrid Light Trapping Structure

    Directory of Open Access Journals (Sweden)

    Yanpeng Shi

    2016-01-01

    Full Text Available We present a systematic simulation study on the impact of disorder in thin film silicon solar cells with hybrid light trapping structure. For the periodical structures introducing certain randomness in some parameters, the nanophotonic light trapping effect is demonstrated to be superior to their periodic counterparts. The nanophotonic light trapping effect can be associated with the increased modes induced by the structural disorders. Our study is a systematic proof that certain disorder is conceptually an advantage for nanophotonic light trapping concepts in thin film solar cells. The result is relevant to the large field of research on nanophotonic light trapping which currently investigates and prototypes a number of new concepts including disordered periodic and quasiperiodic textures. The random effect on the shape of the pattern (position, height, and radius investigated in this paper could be a good approach to estimate the influence of experimental inaccuracies for periodic or quasi-periodic structures.

  5. 3D track reconstruction capability of a silicon hybrid active pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Bergmann, Benedikt; Pichotka, Martin; Pospisil, Stanislav; Vycpalek, Jiri [Czech Technical University in Prague, Institute of Experimental and Applied Physics, Praha (Czech Republic); Burian, Petr; Broulim, Pavel [Czech Technical University in Prague, Institute of Experimental and Applied Physics, Praha (Czech Republic); University of West Bohemia, Faculty of Electrical Engineering, Pilsen (Czech Republic); Jakubek, Jan [Advacam s.r.o., Praha (Czech Republic)

    2017-06-15

    Timepix3 detectors are the latest generation of hybrid active pixel detectors of the Medipix/Timepix family. Such detectors consist of an active sensor layer which is connected to the readout ASIC (application specific integrated circuit), segmenting the detector into a square matrix of 256 x 256 pixels (pixel pitch 55 μm). Particles interacting in the active sensor material create charge carriers, which drift towards the pixelated electrode, where they are collected. In each pixel, the time of the interaction (time resolution 1.56 ns) and the amount of created charge carriers are measured. Such a device was employed in an experiment in a 120 GeV/c pion beam. It is demonstrated, how the drift time information can be used for ''4D'' particle tracking, with the three spatial dimensions and the energy losses along the particle trajectory (dE/dx). Since the coordinates in the detector plane are given by the pixelation (x,y), the x- and y-resolution is determined by the pixel pitch (55 μm). A z-resolution of 50.4 μm could be achieved (for a 500 μm thick silicon sensor at 130 V bias), whereby the drift time model independent z-resolution was found to be 28.5 μm. (orig.)

  6. 3D track reconstruction capability of a silicon hybrid active pixel detector

    Science.gov (United States)

    Bergmann, Benedikt; Pichotka, Martin; Pospisil, Stanislav; Vycpalek, Jiri; Burian, Petr; Broulim, Pavel; Jakubek, Jan

    2017-06-01

    Timepix3 detectors are the latest generation of hybrid active pixel detectors of the Medipix/Timepix family. Such detectors consist of an active sensor layer which is connected to the readout ASIC (application specific integrated circuit), segmenting the detector into a square matrix of 256 × 256 pixels (pixel pitch 55 μm). Particles interacting in the active sensor material create charge carriers, which drift towards the pixelated electrode, where they are collected. In each pixel, the time of the interaction (time resolution 1.56 ns) and the amount of created charge carriers are measured. Such a device was employed in an experiment in a 120 GeV/c pion beam. It is demonstrated, how the drift time information can be used for "4D" particle tracking, with the three spatial dimensions and the energy losses along the particle trajectory (dE/dx). Since the coordinates in the detector plane are given by the pixelation ( x, y), the x- and y-resolution is determined by the pixel pitch (55 μm). A z-resolution of 50.4 μm could be achieved (for a 500 μm thick silicon sensor at 130 V bias), whereby the drift time model independent z-resolution was found to be 28.5 μm.

  7. Modified porous silicon for electrochemical sensor of para-nitrophenol

    Energy Technology Data Exchange (ETDEWEB)

    Belhousse, S., E-mail: all_samia_b@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Belhaneche-Bensemra, N., E-mail: nbelhaneche@yahoo.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Lasmi, K., E-mail: kahinalasmi@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Mezaache, I., E-mail: lyeso_44@hotmail.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Sedrati, T., E-mail: tarek_1990m@hotmail.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Sam, S., E-mail: Sabrina.sam@polytechnique.edu [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Tighilt, F.-Z., E-mail: mli_zola@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Gabouze, N., E-mail: ngabouze@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria)

    2014-11-15

    Highlights: • Hybrid device based on Porous silicon (PSi) and polythiophene (PTh) was prepared. • Three types of PSi/PTh hybrid structures were elaborated: PSi/PTh, oxide/PSi/PTh and Amino-propyltrimethoxysilane (APTMES)/oxide/PSi/PTh. • PTh was grafted on PSi using electrochemical polymerization. • The electrodetection of para-nitrophenol (p-NPh) was performed by cyclic voltammetry. • Oxide/PSi/PTh and APTMES/oxide/PSi/PTh, based electrochemical sensor showed a good response toward p-NPh. - Abstract: Hybrid structures based on polythiophene modified porous silicon was used for the electrochemical detection of para-nitrophenol, which is a toxic derivative of parathion insecticide and it is considered as a major toxic pollutant. The porous silicon was prepared by anodic etching in hydrofluodic acid. Polythiophene films were then grown by electropolymerisation of thiophene monomer on three different surfaces: hydrogenated PSi, oxidized PSi and amine-terminated PSi. The morphology of the obtained structures were observed by scanning electron microscopy and characterized by spectroscopy (FTIR). Cyclic voltammetry was used to study the electrochemical response of proposed structures to para-nitrophenol. The results show a high sensitivity of the sensor and a linearity of the electrochemical response in a large concentration interval ranging from 1.5 × 10{sup −8} M to the 3 × 10{sup −4}M.

  8. Prototyping of Silicon Strip Detectors for the Inner Tracker of the ALICE Experiment

    CERN Document Server

    Sokolov, Oleksiy

    2006-01-01

    The ALICE experiment at CERN will study heavy ion collisions at a center-of-mass energy 5.5∼TeV per nucleon. Particle tracking around the interaction region at radii r<45 cm is done by the Inner Tracking System (ITS), consisting of six cylindrical layers of silicon detectors. The outer two layers of the ITS use double-sided silicon strip detectors. This thesis focuses on testing of these detectors and performance studies of the detector module prototypes at the beam test. Silicon strip detector layers will require about 20 thousand HAL25 front-end readout chips and about 3.5 thousand hybrids each containing 6 HAL25 chips. During the assembly procedure, chips are bonded on a patterned TAB aluminium microcables which connect to all the chip input and output pads, and then the chips are assembled on the hybrids. Bonding failures at the chip or hybrid level may either render the component non-functional or deteriorate its the performance such that it can not be used for the module production. After each bond...

  9. Silicon photomultipliers as readout elements for a Compton effect polarimeter: the COMPASS project

    CERN Document Server

    Del Monte, E; Brandonisio, A; Muleri, F; Soffitta, P; Costa, E; di Persio, G; Cosimo, S Di; Massaro, E; Morbidini, A; Morelli, E; Pacciani, L; Fabiani, S; Michilli, D; Giarrusso, S; Catalano, O; Impiombato, D; Mineo, T; Sottile, G; Billotta, S

    2016-01-01

    COMpton Polarimeter with Avalanche Silicon readout (COMPASS) is a research and development project that aims to measure the polarization of X-ray photons through Compton Scattering. The measurement is obtained by using a set of small rods of fast scintillation materials with both low-Z (as active scatterer) and high-Z (as absorber), all read-out with Silicon Photomultipliers. By this method we can operate scattering and absorbing elements in coincidence, in order to reduce the background. In the laboratory we are characterising the SiPMs using different types of scintillators and we are optimising the performances in terms of energy resolution, energy threshold and photon tagging efficiency. We aim to study the design of two types of satellite-borne instruments: a focal plane polarimeter to be coupled with multilayer optics for hard X-rays and a large area and wide field of view polarimeter for transients and Gamma Ray Bursts. In this paper we describe the status of the COMPASS project, we report about the la...

  10. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    Science.gov (United States)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  11. An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

    Science.gov (United States)

    Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

    2017-09-01

    Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

  12. High density micro-pyramids with silicon nanowire array for photovoltaic applications

    International Nuclear Information System (INIS)

    Rahman, Tasmiat; Navarro-Cía, Miguel; Fobelets, Kristel

    2014-01-01

    We use a metal assisted chemical etch process to fabricate silicon nanowire arrays (SiNWAs) onto a dense periodic array of pyramids that are formed using an alkaline etch masked with an oxide layer. The hybrid micro-nano structure acts as an anti-reflective coating with experimental reflectivity below 1% over the visible and near-infrared spectral regions. This represents an improvement of up to 11 and 14 times compared to the pyramid array and SiNWAs on bulk, respectively. In addition to the experimental work, we optically simulate the hybrid structure using a commercial finite difference time domain package. The results of the optical simulations support our experimental work, illustrating a reduced reflectivity in the hybrid structure. The nanowire array increases the absorbed carrier density within the pyramid by providing a guided transition of the refractive index along the light path from air into the silicon. Furthermore, electrical simulations which take into account surface and Auger recombination show an efficiency increase for the hybrid structure of 56% over bulk, 11% over pyramid array and 8.5% over SiNWAs. (paper)

  13. Stability of the discretization of the electron avalanche phenomenon

    Energy Technology Data Exchange (ETDEWEB)

    Villa, Andrea, E-mail: andrea.villa@rse-web.it [Ricerca Sul Sistema Energetico (RSE), Via Rubattino 50, 20134, Milano (Italy); Barbieri, Luca, E-mail: luca.barbieri@rse-web.it [Ricerca Sul Sistema Energetico (RSE), Via Rubattino 50, 20134, Milano (Italy); Gondola, Marco, E-mail: marco.gondola@rse-web.it [Ricerca Sul Sistema Energetico (RSE), Via Rubattino 50, 20134, Milano (Italy); Leon-Garzon, Andres R., E-mail: andresricardo.leon@polimi.it [CMIC Department “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133, Milano (Italy); Malgesini, Roberto, E-mail: roberto.malgesini@rse-web.it [Ricerca Sul Sistema Energetico (RSE), Via Rubattino 50, 20134, Milano (Italy)

    2015-09-01

    The numerical simulation of the discharge inception is an active field of applied physics with many industrial applications. In this work we focus on the drift-reaction equation that describes the electron avalanche. This phenomenon is one of the basic building blocks of the streamer model. The main difficulty of the electron avalanche equation lies in the fact that the reaction term is positive when a high electric field is applied. It leads to exponentially growing solutions and this has a major impact on the behavior of numerical schemes. We analyze the stability of a reference finite volume scheme applied to this latter problem. The stability of the method may impose a strict mesh spacing, therefore a proper stabilized scheme, which is stable whatever spacing is used, has been developed. The convergence of the scheme is treated as well as some numerical experiments.

  14. Network dynamics in nociceptive pathways assessed by the neuronal avalanche model

    Directory of Open Access Journals (Sweden)

    Wu José

    2012-04-01

    Full Text Available Abstract Background Traditional electroencephalography provides a critical assessment of pain responses. The perception of pain, however, may involve a series of signal transmission pathways in higher cortical function. Recent studies have shown that a mathematical method, the neuronal avalanche model, may be applied to evaluate higher-order network dynamics. The neuronal avalanche is a cascade of neuronal activity, the size distribution of which can be approximated by a power law relationship manifested by the slope of a straight line (i.e., the α value. We investigated whether the neuronal avalanche could be a useful index for nociceptive assessment. Findings Neuronal activity was recorded with a 4 × 8 multichannel electrode array in the primary somatosensory cortex (S1 and anterior cingulate cortex (ACC. Under light anesthesia, peripheral pinch stimulation increased the slope of the α value in both the ACC and S1, whereas brush stimulation increased the α value only in the S1. The increase in α values was blocked in both regions under deep anesthesia. The increase in α values in the ACC induced by peripheral pinch stimulation was blocked by medial thalamic lesion, but the increase in α values in the S1 induced by brush and pinch stimulation was not affected. Conclusions The neuronal avalanche model shows a critical state in the cortical network for noxious-related signal processing. The α value may provide an index of brain network activity that distinguishes the responses to somatic stimuli from the control state. These network dynamics may be valuable for the evaluation of acute nociceptive processes and may be applied to chronic pathological pain conditions.

  15. Development of high performance readout ASICs for silicon photomultipliers (SiPMs)

    International Nuclear Information System (INIS)

    Shen, Wei

    2012-01-01

    Silicon Photomultipliers (SiPMs) are novel kind of solid state photon detectors with extremely high photon detection resolution. They are composed of hundreds or thousands of avalanche photon diode pixels connected in parallel. These avalanche photon diodes are operated in Geiger Mode. SiPMs have the same magnitude of multiplication gain compared to the conventional photomultipliers (PMTs). Moreover, they have a lot of advantages such as compactness, relatively low bias voltage and magnetic field immunity etc. Special readout electronics are required to preserve the high performance of the detector. KLauS and STiC are two CMOS ASIC chips designed in particular for SiPMs. KLauS is used for SiPM charge readout applications. Since SiPMs have a much larger detector capacitance compared to other solid state photon detectors such as PIN diodes and APDs, a few special techniques are used inside the chip to make sure a descent signal to noise ratio for pixel charge signal can be obtained. STiC is a chip dedicated to SiPM time-of-flight applications. High bandwidth and low jitter design schemes are mandatory for such applications where time jitter less than tens of picoseconds is required. Design schemes and error analysis as well as measurement results are presented in the thesis.

  16. Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire; Sagnes, Isabelle; Raj, Rama [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Lenglé, Kevin; Gay, Mathilde; Bramerie, Laurent [Université Européenne de Bretagne (UEB), 5 Boulevard Laënnec, 35000 Rennes (France); CNRS-Foton Laboratory (UMR 6082), Enssat, BP 80518, 22305 Lannion Cedex (France); Braive, Rémy; Raineri, Fabrice, E-mail: fabrice.raineri@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Université Paris Diderot, Sorbonne Paris Cité, 75207 Paris Cedex 13 (France)

    2014-01-06

    Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

  17. Assessing the value of real-time snow and avalanche information

    Science.gov (United States)

    Zeidler, Antonia; Adams, Marc; Schuster, Martin; Berner, Martin; Nagy, Wilhelm

    2017-04-01

    This poster presentation shows first results from a pilot study on exploring the possibilities of using existing and new information and communication technologies (ICT) for snow and avalanche assessments. Today, ICT solutions allow the utilisation of information at a high spatiotemporal resolution, due to the widespread availability of internet access, high computing power and affordable mobile devices. Therefore, there is an increasing request for up to date information on snow and avalanche decision-making. However, there are challenges that need to be addressed from different view points. These include topics in the field of technological feasibility of providing a stable network, exchanging trustworthy information and motivation of experts to participate. This contribution discusses the lessons-learnt, from the establishment of a platform to the user-experience.

  18. Investigation of the performance of alpha particle counting and alpha-gamma discrimination by pulse shape with micro-pixel avalanche photodiode

    International Nuclear Information System (INIS)

    Ahmadov, G.; Madatov, R.; Sadigov, A.; Sadygov, Z.; Jafarova, E.; Ahmadov, G.; Sadygov, Z.; Olshevski, A.; Zerrouk, F.; Mukhtarov, R.

    2015-01-01

    Being capable measuring small lights gives possibility to use micro-pixel avalanche photodiodes with scintillators. It is shown two prototypes to use micro-pixel avalanche photodiodes with and without scintillators as alpha and gamma counters in this paper. First prototype is to use two micro-pixel avalanche photodiodes. One for detecting alpha particles and closer to it, the second one with a thin plastic scintillator for detecting gamma rays. Second prototype is called two-layers configuration in which it is used only one micro-pixel avalanche photodiode, but two scntillators with different decay times. One can distinquish alpha particle and gamma ray events by using pulse shape discrimination techniques in the two-layer configuration. In this work an alpha particle and gamma ray counting performance of micro-pixel avalanche photodiodes without scintillators and its combination of plastic and BGO+ plastic scintillators was investigated. Obtained results showed the detection performance of the micro-pixel avalanche photodiodes in combination with plastic scintillator was about the same as conventional semiconductor detectors

  19. Avalanches of Singing Sand in the Laboratory

    Science.gov (United States)

    Dagois-Bohy, Simon; Courrech Du Pont, Sylvain; Douady, Stéphane

    2011-03-01

    The song of dunes is a natural phenomenon that has arisen travellers' curiosity for a long time, from Marco Polo to R.A. Bagnold. Scientific observations in the XXth century have shown that the sound is emitted during a shear flow of these particular grains, the free surface of the flow having coherent vibrations like a loud speaker. The sound emission is also submitted to a threshold effect with many parameters like humidity, flow speed, surface of the grains. The sound has been reproduced in laboratory avalanche experiments close to the natural phenomenon on field, but set in a channel with a hard bottom and a few centimeters of sand flowing, which contradicts explanations of the sound that involve a sand dune under the avalanche flow. Flow rates measurements also show the presence of a plug region in the flow above the sheared band, with the same characteristic length as the coherence zones of the sound. Finally we show experimentally that the Froude number, once modified to take into account the height of this plug band, is the parameter that sets the amplitude of the sound, and produces a threshold that depends on the grain type.

  20. Townsend coefficients of gases in avalanche counters

    International Nuclear Information System (INIS)

    Brunner, G.

    1978-01-01

    Though much work has been done by many authors in the last few years in the development and application of avalanche counters for ion radiation, it is based upon values of the Townsend coefficients as the essential gas parameter, which were determined many years ago for much lower reduced field strengths F/p than prevail in such counters. Therefore absolute determinations of α in vapours of methyl alcohol, cyclohexane, acetone, and n-heptene were performed under original conditions of avalanche counters. The values obtained do not differ by more than 30%-50% from the former values indeed, extrapolated over F/p for the first three mentioned substances, but the amounts of A and B in the usual representation α/p=A exp(-B(F/p)) are much greater for the stronger reduced fields. This is of importance for such counter properties as the dependence of pulse heights on pressure, voltage, electrode distance etc., which are governed by other combinations of A and B than α/p itself. A comparison of results for different ionic radiations shows a marked influence of the primary ionization density along the particle tracks which is hard to explain. (Auth.)

  1. X-ray imaging with amorphous selenium: Pulse height measurements of avalanche gain fluctuations

    International Nuclear Information System (INIS)

    Lui, Brian J. M.; Hunt, D. C.; Reznik, A.; Tanioka, K.; Rowlands, J. A.

    2006-01-01

    Avalanche multiplication in amorphous selenium (a-Se) can provide a large, adjustable gain for active matrix flat panel imagers (AMFPI), enabling quantum noise limited x-ray imaging during both radiography and fluoroscopy. In the case of direct conversion AMFPI, the multiplication factor for each x ray is a function of its depth of interaction, and the resulting variations in gain can reduce the detective quantum efficiency (DQE) of the system. An experimental method was developed to measure gain fluctuations by analyzing images of individual x rays that were obtained using a video camera with an a-Se target operated in avalanche mode. Pulse height spectra (PHS) of the charge produced per x ray were recorded for monoenergetic 30.9, 49.4, and 73.8 keV x-ray sources. The rapid initial decay and long tail of each PHS can be explained by a model in which positive charge dominates the initiation of avalanche. The Swank information factor quantifies the effect of gain fluctuation on DQE and was calculated from the PHS. The information factor was found to be 0.5 for a 25 μm a-Se layer with a maximum gain of ∼300. Changing the energy of the incident x ray influenced the range of the primary photoelectron and noticeably affected the tail of the experimental PHS, but did not significantly change the avalanche Swank factor

  2. Characterization of silicon photomultipliers and validation of the electrical model

    Science.gov (United States)

    Peng, Peng; Qiang, Yi; Ross, Steve; Burr, Kent

    2018-04-01

    This paper introduces a systematic way to measure most features of the silicon photomultipliers (SiPM). We implement an efficient two-laser procedure to measure the recovery time. Avalanche probability was found to play an important role in explaining the right behavior of the SiPM recovery process. Also, we demonstrate how equivalent circuit parameters measured by optical tests can be used in SPICE modeling to predict details of the time constants relevant to the pulse shape. The SiPM properties measured include breakdown voltage, gain, diode capacitor, quench resistor, quench capacitor, dark count rate, photodetection efficiency, cross-talk and after-pulsing probability, and recovery time. We apply these techniques on the SiPMs from two companies: Hamamatsu and SensL.

  3. Avalanche weak layer shear fracture parameters from the cohesive crack model

    Science.gov (United States)

    McClung, David

    2014-05-01

    Dry slab avalanches release by mode II shear fracture within thin weak layers under cohesive snow slabs. The important fracture parameters include: nominal shear strength, mode II fracture toughness and mode II fracture energy. Alpine snow is not an elastic material unless the rate of deformation is very high. For natural avalanche release, it would not be possible that the fracture parameters can be considered as from classical fracture mechanics from an elastic framework. The strong rate dependence of alpine snow implies that it is a quasi-brittle material (Bažant et al., 2003) with an important size effect on nominal shear strength. Further, the rate of deformation for release of an avalanche is unknown, so it is not possible to calculate the fracture parameters for avalanche release from any model which requires the effective elastic modulus. The cohesive crack model does not require the modulus to be known to estimate the fracture energy. In this paper, the cohesive crack model was used to calculate the mode II fracture energy as a function of a brittleness number and nominal shear strength values calculated from slab avalanche fracture line data (60 with natural triggers; 191 with a mix of triggers). The brittleness number models the ratio of the approximate peak value of shear strength to nominal shear strength. A high brittleness number (> 10) represents large size relative to fracture process zone (FPZ) size and the implications of LEFM (Linear Elastic Fracture Mechanics). A low brittleness number (e.g. 0.1) represents small sample size and primarily plastic response. An intermediate value (e.g. 5) implies non-linear fracture mechanics with intermediate relative size. The calculations also implied effective values for the modulus and the critical shear fracture toughness as functions of the brittleness number. The results showed that the effective mode II fracture energy may vary by two orders of magnitude for alpine snow with median values ranging from 0

  4. Error diagrams and temporal correlations in a fracture model with characteristic and power-law distributed avalanches

    DEFF Research Database (Denmark)

    Moreno, Y.; Vázquez-Prada, M.; Pacheco, A.F.

    2003-01-01

    to the heterogeneity of the system. In one regime, a characteristic event is observed while for the second regime a power-law spectrum of avalanches is obtained reminiscent of self-organized criticality. We find that both regimes are different when predicting large avalanches and that, in the second regime...

  5. Emplacement mechanisms of contrasting debris avalanches at Volcán Mombacho (Nicaragua), provided by structural and facies analysis

    Science.gov (United States)

    Shea, Thomas; van Wyk de Vries, Benjamin; Pilato, Martín

    2008-07-01

    We study the lithology, structure, and emplacement of two debris-avalanche deposits (DADs) with contrasting origins and materials from the Quaternary-Holocene Mombacho Volcano, Nicaragua. A clear comparison is possible because both DADs were emplaced onto similar nearly flat (3° slope) topography with no apparent barrier to transport. This lack of confinement allows us to study, in nature, the perfect case scenario of a freely spreading avalanche. In addition, there is good evidence that no substratum was incorporated in the events during flow, so facies changes are related only to internal dynamics. Mombacho shows evidence of at least three large flank collapses, producing the two well-preserved debris avalanches of this study; one on its northern flank, “Las Isletas,” directed northeast, and the other on its southern flank, “El Crater,” directed south. Other south-eastern features indicate that the debris-avalanche corresponding to the third collapse (La Danta) occurred before Las Isletas and El Crater events. The materials involved in each event were similar, except in their alteration state and in the amount of substrata initially included in the collapse. While “El Crater” avalanche shows no signs of substratum involvement and has characteristics of a hydrothermal weakening-related collapse, the “Las Isletas” avalanche involves significant substratum and was generated by gravity spreading-related failure. The latter avalanche may have interacted with Lake Nicaragua during transport, in which case its run-out could have been modified. Through a detailed morphological and structural description of the Mombacho avalanches, we provide two contrasting examples of non-eruptive volcanic flank collapse. We show that, remarkably, even with two distinct collapse mechanisms, the debris avalanches developed the same gross stratigraphy of a coarse layer above a fine layer. This fine layer provided a low friction basal slide layer. Whereas DAD layering and

  6. Meshfree simulation of avalanches with the Finite Pointset Method (FPM)

    Science.gov (United States)

    Michel, Isabel; Kuhnert, Jörg; Kolymbas, Dimitrios

    2017-04-01

    Meshfree methods are the numerical method of choice in case of applications which are characterized by strong deformations in conjunction with free surfaces or phase boundaries. In the past the meshfree Finite Pointset Method (FPM) developed by Fraunhofer ITWM (Kaiserslautern, Germany) has been successfully applied to problems in computational fluid dynamics such as water crossing of cars, water turbines, and hydraulic valves. Most recently the simulation of granular flows, e.g. soil interaction with cars (rollover), has also been tackled. This advancement is the basis for the simulation of avalanches. Due to the generalized finite difference formulation in FPM, the implementation of different material models is quite simple. We will demonstrate 3D simulations of avalanches based on the Drucker-Prager yield criterion as well as the nonlinear barodesy model. The barodesy model (Division of Geotechnical and Tunnel Engineering, University of Innsbruck, Austria) describes the mechanical behavior of soil by an evolution equation for the stress tensor. The key feature of successful and realistic simulations of avalanches - apart from the numerical approximation of the occurring differential operators - is the choice of the boundary conditions (slip, no-slip, friction) between the different phases of the flow as well as the geometry. We will discuss their influences for simplified one- and two-phase flow examples. This research is funded by the German Research Foundation (DFG) and the FWF Austrian Science Fund.

  7. Silicon induced improvement in morpho-physiological traits of maize (zea mays l.) under water deficit

    International Nuclear Information System (INIS)

    Amin, M.; Ahmad, R.; Basra, S.M.A.; Murtaza, G.

    2014-01-01

    Current water scarcity is an emerging issue in semi-arid regions like Pakistan and cause of deterioration in productivity of crops to reduce crop yield all over the world. Silicon is known to be better against the deleterious effects of drought on plant growth and development. A pot study was conducted to evaluate the effect of Si nutrition (0, 50, 100 and 150 mg/kg) on the growth of a relatively drought tolerant (P-33H25) and sensitive (FH-810) maize hybrids. Two levels of soil water content were used viz. 100 and 60% of field capacity. Water deficit condition in soil significantly reduced morphological and physiological attributes of maize plants. Silicon application significantly improved the plant height, leaf area per plant, primary root length, dry matter of shoot and roots and plant dry matter, water relation and gas exchange characteristics of both maize cultivars under water deficit condition. Poor growth of drought stressed plants was significantly improved with Si application. The silicon fertilized (100 mg/kg) drought stressed plants of hybrid P-33H25 produced maximum (21.68% more) plant dry matter as compared to plants that were not provided with silicon nutrition. Nonetheless, silicon application (150 mg/kg) resulted in maximum increase (26.03%) in plant dry weight of hybrid FH-810 plants that were grown under limited moisture supply i.e., 60% FC. In conclusion silicon application to drought stressed maize plants was better to improve the growth and dry matter could be attributed to improved osmotic adjustment, photosynthetic rate and lowered transpiration. (author)

  8. Silicon based quantum dot hybrid qubits

    Science.gov (United States)

    Kim, Dohun

    2015-03-01

    The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron's charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a `hybrid' qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the `sweet spot' for charge qubit operation. Along with fast (>GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), DOE (DE-FG02-03ER46028), and by the Laboratory Directed Research and Development program at Sandia National Laboratories

  9. Silicon fiber with p-n junction

    International Nuclear Information System (INIS)

    Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

    2014-01-01

    In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

  10. Electric properties and carrier multiplication in breakdown sites in multi-crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schneemann, Matthias; Carius, Reinhard; Rau, Uwe [IEK5-Photovoltaics, Forschungszentrum Jülich, Jülich 52425 (Germany); Kirchartz, Thomas, E-mail: t.kirchartz@fz-juelich.de [IEK5-Photovoltaics, Forschungszentrum Jülich, Jülich 52425 (Germany); Faculty of Engineering and CENIDE, University of Duisburg-Essen, Carl-Benz-Str. 199, Duisburg 47057 (Germany)

    2015-05-28

    This paper studies the effective electrical size and carrier multiplication of breakdown sites in multi-crystalline silicon solar cells. The local series resistance limits the current of each breakdown site and is thereby linearizing the current-voltage characteristic. This fact allows the estimation of the effective electrical diameters to be as low as 100 nm. Using a laser beam induced current (LBIC) measurement with a high spatial resolution, we find carrier multiplication factors on the order of 30 (Zener-type breakdown) and 100 (avalanche breakdown) as new lower limits. Hence, we prove that also the so-called Zener-type breakdown is followed by avalanche multiplication. We explain that previous measurements of the carrier multiplication using thermography yield results higher than unity, only if the spatial defect density is high enough, and the illumination intensity is lower than what was used for the LBIC method. The individual series resistances of the breakdown sites limit the current through these breakdown sites. Therefore, the measured multiplication factors depend on the applied voltage as well as on the injected photocurrent. Both dependencies are successfully simulated using a series-resistance-limited diode model.

  11. Martian Dust Devil Electron Avalanche Process and Associated Electrochemistry

    Science.gov (United States)

    Jackson, Telana L.; Farrell, William M.; Delory, Gregory T.; Nithianandam, Jeyasingh

    2010-01-01

    Mars' dynamic atmosphere displays localized dust devils and larger, global dust storms. Based on terrestrial analog studies, electrostatic modeling, and laboratory work these features will contain large electrostatic fields formed via triboelectric processes. In the low-pressure Martian atmosphere, these fields may create an electron avalanche and collisional plasma due to an increase in electron density driven by the internal electrical forces. To test the hypothesis that an electron avalanche is sustained under these conditions, a self-consistent atmospheric process model is created including electron impact ionization sources and electron losses via dust absorption, electron dissociation attachment, and electron/ion recombination. This new model is called the Dust Devil Electron Avalanche Model (DDEAM). This model solves simultaneously nine continuity equations describing the evolution of the primary gaseous chemical species involved in the electrochemistry. DDEAM monitors the evolution of the electrons and primary gas constituents, including electron/water interactions. We especially focus on electron dynamics and follow the electrons as they evolve in the E field driven collisional gas. When sources and losses are self-consistently included in the electron continuity equation, the electron density grows exponentially with increasing electric field, reaching an equilibrium that forms a sustained time-stable collisional plasma. However, the character of this plasma differs depending upon the assumed growth rate saturation process (chemical saturation versus space charge). DDEAM also shows the possibility of the loss of atmospheric methane as a function of electric field due to electron dissociative attachment of the hydrocarbon. The methane destruction rates are presented and can be included in other larger atmospheric models.

  12. Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

    Science.gov (United States)

    Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

    2016-01-01

    A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

  13. Effect of nanodimensional polyethylenimine layer on surface potential barriers of hybrid structures based on silicon single crystal

    Science.gov (United States)

    Malyar, Ivan V.; Gorin, Dmitry A.; Stetsyura, Svetlana V.

    2013-01-01

    In this report we present the analysis of I-V curves for MIS-structures like silicon substrate / nanodimensional polyelectrolyte layer / metal probe (contact) which is promising for biosensors, microfluidic chips, different devices of molecular electronics, such as OLEDs, solar cells, where polyelectrolyte layers can be used to modify semiconductor surface. The research is directed to investigate the contact phenomena which influence the resulting signal of devices mentioned above. The comparison of I-V characteristics of such structures measured by scanning tunnel microscopy (contactless technique) and using contact areas deposited by thermal evaporation onto the organic layer (the contact one) was carried out. The photoassisted I-V measurements and complex analysis based on Simmons and Schottky models allow one to extract the potential barriers and to observe the changes of charge transport in MIS-structures under illumination and after polyelectrolyte adsorption. The direct correlation between the thickness of the deposited polyelectrolyte layer and both equilibrium tunnel barrier and Schottky barrier height was observed for hybrid structures with polyethylenimine. The possibility of control over the I-V curves of hybrid structure and the height of the potential barriers (for different charge transports) by illumination was confirmed. Based on experimental data and complex analysis the band diagrams were plotted which illustrate the changes of potential barriers for MIS-structures due to the polyelectrolyte adsorption and under the illumination.

  14. Isolation and Expression Analysis of Novel Silicon Absorption Gene from Roots of Mangrove (Rhizophora apiculata via Suppression Subtractive Hybridization

    Directory of Open Access Journals (Sweden)

    Mahbod Sahebi

    2014-01-01

    Full Text Available Silicon (Si is the second most abundant element in soil after oxygen. It is not an essential element for plant growth and formation but plays an important role in increasing plant tolerance towards different kinds of abiotic and biotic stresses. The molecular mechanism of Si absorption and accumulation may differ between plants, such as monocotyledons and dicotyledons. Silicon absorption and accumulation in mangrove plants are affected indirectly by some proteins rich in serine and proline amino acids. The expression level of the genes responsible for Si absorption varies in different parts of plants. In this study, Si is mainly observed in the epidermal roots’ cell walls of mangrove plants compared to other parts. The present work was carried out to discover further information on Si stress responsive genes in Rhizophora apiculata, using the suppression subtractive hybridization technique. To construct the cDNA library, two-month-old seedlings were exposed to 0.5, 1, and 1.5 mM SiO2 for 15 hrs and for 1 to 6 days resulting in a total of 360 high quality ESTs gained. Further examination by RT-PCR and real-time qRT-PCR showed the expression of a candidate gene of serine-rich protein.

  15. Early Holocene (8.6 ka) rock avalanche deposits, Obernberg valley (Eastern Alps): Landform interpretation and kinematics of rapid mass movement.

    Science.gov (United States)

    Ostermann, Marc; Sanders, Diethard; Ivy-Ochs, Susan; Alfimov, Vasily; Rockenschaub, Manfred; Römer, Alexander

    2012-10-15

    In the Obernberg valley, the Eastern Alps, landforms recently interpreted as moraines are re-interpreted as rock avalanche deposits. The catastrophic slope failure involved an initial rock volume of about 45 million m³, with a runout of 7.2 km over a total vertical distance of 1330 m (fahrböschung 10°). 36 Cl surface-exposure dating of boulders of the avalanche mass indicates an event age of 8.6 ± 0.6 ka. A 14 C age of 7785 ± 190 cal yr BP of a palaeosoil within an alluvial fan downlapping the rock avalanche is consistent with the event age. The distal 2 km of the rock-avalanche deposit is characterized by a highly regular array of transverse ridges that were previously interpreted as terminal moraines of Late-Glacial. 'Jigsaw-puzzle structure' of gravel to boulder-size clasts in the ridges and a matrix of cataclastic gouge indicate a rock avalanche origin. For a wide altitude range the avalanche deposit is preserved, and the event age of mass-wasting precludes both runout over glacial ice and subsequent glacial overprint. The regularly arrayed transverse ridges thus were formed during freezing of the rock avalanche deposits.

  16. Avalanches and generalized memory associativity in a network model for conscious and unconscious mental functioning

    Science.gov (United States)

    Siddiqui, Maheen; Wedemann, Roseli S.; Jensen, Henrik Jeldtoft

    2018-01-01

    We explore statistical characteristics of avalanches associated with the dynamics of a complex-network model, where two modules corresponding to sensorial and symbolic memories interact, representing unconscious and conscious mental processes. The model illustrates Freud's ideas regarding the neuroses and that consciousness is related with symbolic and linguistic memory activity in the brain. It incorporates the Stariolo-Tsallis generalization of the Boltzmann Machine in order to model memory retrieval and associativity. In the present work, we define and measure avalanche size distributions during memory retrieval, in order to gain insight regarding basic aspects of the functioning of these complex networks. The avalanche sizes defined for our model should be related to the time consumed and also to the size of the neuronal region which is activated, during memory retrieval. This allows the qualitative comparison of the behaviour of the distribution of cluster sizes, obtained during fMRI measurements of the propagation of signals in the brain, with the distribution of avalanche sizes obtained in our simulation experiments. This comparison corroborates the indication that the Nonextensive Statistical Mechanics formalism may indeed be more well suited to model the complex networks which constitute brain and mental structure.

  17. Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

    International Nuclear Information System (INIS)

    Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

    1999-01-01

    The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

  18. First characterisation of the "Rumi-Pana" rock avalanche deposits (Famatina Range, La Rioja, Argentina)

    Science.gov (United States)

    Santiago Pullarello, José; Derron, Marc-Henri; Penna, Ivanna; Leiva, Alicia; Jaboyadoff, Michel

    2017-04-01

    Active mountain fronts are subject to large scale slope collapses which have the capacity to run long distances on piedmont areas. Along time, fluvial activity and other gravitatory processes can intensively erode and mask primary features related to the collapses. Therefore, to reconstruct the history of their occurrence, further analyses are needed, e.g. sedimentologic analyses. This work focuses on the occurrence of large rock avalanches in the Vinchina region, La Rioja (28°43'27.81'' S / 68°00'25.42'' W) on the western side of the Famatina range(Argentina). Here, photointerpretation of high resolution satellite images (Google Earth) allowed us to identify two rock avalanches, main scarps developed at 2575 and 2750 m a.s.l. . There are no absolute ages for these deposits, however, comparing their preservation degree with those dated further north (in similar climatic and landscape dynamics contexts [i]), we can suggest these rock avalanches took place during the Pleistocene. We carried out a fieldwork survey in this remote area, including classical landslide mapping, structural analysis, deposits characterization and sampling. The deposits reach the valley bottom (at around 1700 m a.s.l.) with runouts about 5 and 5.3 km long. In one of the cases, the morphology of the deposit is well preserved, allowing to reconstruct accurately its extension. However, in the second case, the deposits are strongly eroded by courses draining the mountain front, therefore further analyses should be done to reconstruct its extension. In addition to morphologic interpretations, a multiscale grain-size analysis was done to differentiate rock avalanches from other hillslope deposits: (1) 3D surface models of surface plots (5x5m) have been built by SfM photogrammetry; 2) classical sieving and 3) laser grain-size analysis of deposits. Samples were collected on different parts of the slope, but also along cross sections through the avalanche deposit. This deposits characterization will

  19. The electromagnetic radiation fields of a relativistic electron avalanche with special attention to the origin of narrow bipolar pulses

    Science.gov (United States)

    Cooray, G. V.; Cooray, G. K.

    2011-12-01

    Gurevich et al. [1] postulated that the source of narrow bipolar pulses, a class of high energy pulses that occur during thunderstorms, could be a runaway electron avalanche driven by the intense electric fields of a thunderstorm. Recently, Watson and Marshall [2] used the modified transmission line model to test the mechanism of the source of narrow bipolar pulses. In a recent paper, Cooray and Cooray [3] demonstrated that the electromagnetic fields of accelerating charges could be used to evaluate the electromagnetic fields from electrical discharges if the temporal and spatial variation of the charges in the discharge is known. In the present study, those equations were utilized to evaluate the electromagnetic fields generated by a relativistic electron avalanche. In the analysis it is assumed that all the electrons in the avalanche are moving with the same speed. In other words, the growth or the decay of the number of electrons takes place only at the head of the avalanche. It is shown that the radiation is emanating only from the head of the avalanche where electrons are being accelerated. It is also shown that an analytical expression for the radiation field of the avalanche at any distance can be written directly in terms of the e-folding length of the avalanche. This makes it possible to extract directly the spatial variation of the e-folding length of the avalanche from the measured radiation fields. In the study this model avalanche was used to investigate whether it can be used to describe the measured electromagnetic fields of narrow bipolar pulses. The results obtained are in reasonable agreement with the two station data of Eack [4] for speeds of propagation around (2 - 2.5) x 10^8 m/s and when the propagation effects on the electric fields measured at the distant station is taken into account. [1] Gurevich et al. (2004), Phys. Lett. A., 329, pp. 348 -361. [2] Watson, S. S. and T. C. Marshall (2007), Geophys. Res. Lett., Vol. 34, L04816, doi: 10

  20. 2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment

    Science.gov (United States)

    Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

    2018-02-01

    PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow p+ -anode has high perimeter curvature that enhances the electric field. In SPADs, noise is quantified by the dark count rate (DCR) that is a measure for the number of false counts triggered by unwanted processes in the non-illuminated device. Just like for desired events, the probability a dark count increases with increasing electric field and the perimeter conditions are critical. In this work, the DCR was studied by two 2D methods of analysis: the "quasi-2D" (Q-2D) method where vertical 1D cross-sections were assumed for calculating the electron/hole avalanche-probabilities, and the "ionization-integral 2D" (II-2D) method where crosssections were placed where the maximum ionization-integrals were calculated. The Q-2D method gave satisfactory results in structures where the peripheral regions had a small contribution to the DCR, such as in devices with conventional deepjunction guard rings (GRs). Otherwise, the II-2D method proved to be much more precise. The results show that the DCR simulation methods are useful for optimizing the compromise between fill-factor and p-/n-doping profile design in SPAD devices. For the experimentally investigated PureB SPADs, excellent agreement of the measured and simulated DCR was achieved. This shows that although an implicit GR is attractively compact, the very shallow pn-junction gives a risk of having such a low breakdown voltage at the perimeter that the DCR of the device may be negatively impacted.

  1. Trigger mechanisms of debris avalanche. Comparison between Bandai-san 1888 and the other cases

    Energy Technology Data Exchange (ETDEWEB)

    Ui, Tadahide

    1988-08-25

    This report describes a trial of classifying the trigger mechanisms of debris avalanche in a volcanic action, on the basis of a geography and the structure of the sedimentation. Reason of disintegration is diversified but the debris avalanche is caused by the destruction of the unstable mountain mass. In the case of the 1888 debris avalanche of Bandai-san, a small steam explosion at the end of the strato-volcanic activity caused the instability of a part of the mountain mass, inducing a landslide. At the active period of the volcano, a viscous magma penetrates into the volcano mass, sometimes deforming the mountain body and eventually reaching disintegration. Furthermore, an eroded valley on the surface of the volcano body develops and disintegrates and, also along the slope of the volcano, a disintegration towards the sea-bottom will occur. (4 figs, 4 tabs, 19 refs)

  2. Wear Characteristics of Hybrid Composites Based on Za27 Alloy Reinforced With Silicon Carbide and Graphite Particles

    Directory of Open Access Journals (Sweden)

    S. Mitrović

    2014-06-01

    Full Text Available The paper presents the wear characteristics of a hybrid composite based on zinc-aluminium ZA27 alloy, reinforced with silicon-carbide and graphite particles. The tested sample contains 5 vol.% of SiC and 3 vol.% Gr particles. Compocasting technique has been used to prepare the samples. The experiments were performed on a “block-on-disc” tribometer under conditions of dry sliding. The wear volumes of the alloy and the composite were determined by varying the normal loads and sliding speeds. The paper contains the procedure for preparation of sample composites and microstructure of the composite material and the base ZA27 alloy. The wear surface of the composite material was examined using the scanning electronic microscope (SEM and energy dispersive spectrometry (EDS. Conclusions were obtained based on the observed impact of the sliding speed, normal load and sliding distance on tribological behaviour of the observed composite.

  3. Facile preparation of carbon nanotubes-graphene hybrids and the effect of aspect ratio of carbon nanotubes on electrical and thermal properties of silicone rubber based composites

    Science.gov (United States)

    Zhao, Shizhen; Bai, Lu; Zheng, Junping

    2018-01-01

    Thermal exfoliation, as an effective and easily scalable method, was widely used to produce graphene (GE). In order to prevent the severe stacking of GE sheets after thermal exfoliation process, a facile technique was used to solve this problem through the barrier effect of carbon nanotubes (CNTs). Two kinds of CNTs with different aspect ratios (AR) were taken to prepare CNTs-GE hybrids using this technique, and then the effect of AR of CNTs (namely CNTs-L for low AR and CNTs-H for high AR) in the hybrids on the performance of silicone rubber (SR) composites was investigated. The results indicate that the presence of CNTs can effectively impede the stacking of GE sheets and the hybrids are dispersed uniformly in the SR matrix. With the addition of CNTs-GE hybrids, the resulted SR composites exhibit greatly improved electrical and thermal properties, especially for the composites filled with CNTs-H-GE hybrid. At the hybrids content of 3.0 wt%, the volume resistivity of CNTs-H-GE/SR composite is 5 × 104 Ω cm (about 10 orders of magnitude decrease compared with pure SR). And the thermal conductivity increases by 78% compared to the pure SR. But as for the CNTs-L-GE/SR composite, the corresponding values are 3 × 106 Ω cm and 59%, respectively. In terms of thermal stability, the CNTs-H-GE/SR composite containing 1.0 wt% hybrid exhibits the maximum improvement of initial degradation temperature (419 °C) compared with the CNTs-L-GE/SR composite (393 °C) and pure SR (365 °C).

  4. The Large-Scale Debris Avalanche From The Tancitaro Volcano (Mexico): Characterization And Modeling

    Science.gov (United States)

    Morelli, S.; Gigli, G.; Falorni, G.; Garduno Monroy, V. H.; Arreygue, E.

    2008-12-01

    The Tancitaro is an andesitic-dacitic stratovolcano located in the Michoacán Guanajuato volcanic field within the west-central portion of the trans-Mexican Volcanic Belt. The volcanism in this area is characterized by two composite volcanoes, the highest of which is the Tancitaro volcanic edifice (3840 m), some low angle lava cones and more than 1,000 monogenetic cinder cones. The distribution of the cinder cones is controlled by NE-SW active faults, although there are also additional faults with NNW-SSE trends along which some cones are aligned. The Tancitaro stratovolcano is located at the intersection of the tectonical structures that originate these alignments. All this geological activity has contributed to the gravitational instability of the volcano, leading to a huge sector collapse which produced the investigated debris avalanche. The collapse structure is an east-facing horseshoe-shaped crater (4 km wide and 5.3 km long), related with a large fan that was deposited within the Tepalcatepec depression. The deposit starts only 7 km downslope from the failure scar, it is 66 km long and covers an area of approximately 1155 km2. The landslide magnitude is about 20 km3 and it was firstly determined by the reconstruction of the paleo-edifice using a GIS software and then validated by the observation of significant outcrops. The fan was primarily formed by the deposit of this huge debris avalanche and subsequently by debris flow and fluvial deposits. Field investigations on the fan area highlighted the presence of two texturally distinct parts, which are referred to the 'block facies' and the 'matrix facies'. The first sedimentary structure is responsible for the typical hummock morphologies in the proximal area, as seen in many other debris avalanche deposits. Instead in the distal zones, the deposit is made up by the 'mixed block and matrix facies'. Blocks and megablocks, some of which are characterized by a jigsaw puzzle texture, gradually decrease in size

  5. Indirect flat-panel detector with avalanche gain: Fundamental feasibility investigation for SHARP-AMFPI (scintillator HARP active matrix flat panel imager)

    International Nuclear Information System (INIS)

    Zhao Wei; Li Dan; Reznik, Alla; Lui, B.J.M.; Hunt, D.C.; Rowlands, J.A.; Ohkawa, Yuji; Tanioka, Kenkichi

    2005-01-01

    An indirect flat-panel imager (FPI) with avalanche gain is being investigated for low-dose x-ray imaging. It is made by optically coupling a structured x-ray scintillator CsI(Tl) to an amorphous selenium (a-Se) avalanche photoconductor called HARP (high-gain avalanche rushing photoconductor). The final electronic image is read out using an active matrix array of thin film transistors (TFT). We call the proposed detector SHARP-AMFPI (scintillator HARP active matrix flat panel imager). The advantage of the SHARP-AMFPI is its programmable gain, which can be turned on during low dose fluoroscopy to overcome electronic noise, and turned off during high dose radiography to avoid pixel saturation. The purpose of this paper is to investigate the important design considerations for SHARP-AMFPI such as avalanche gain, which depends on both the thickness d Se and the applied electric field E Se of the HARP layer. To determine the optimal design parameter and operational conditions for HARP, we measured the E Se dependence of both avalanche gain and optical quantum efficiency of an 8 μm HARP layer. The results were used in a physical model of HARP as well as a linear cascaded model of the FPI to determine the following x-ray imaging properties in both the avalanche and nonavalanche modes as a function of E Se : (1) total gain (which is the product of avalanche gain and optical quantum efficiency); (2) linearity; (3) dynamic range; (4) gain nonuniformity resulting from thickness nonuniformity; and (5) effects of direct x-ray interaction in HARP. Our results showed that a HARP layer thickness of 8 μm can provide adequate avalanche gain and sufficient dynamic range for x-ray imaging applications to permit quantum limited operation over the range of exposures needed for radiography and fluoroscopy

  6. Caldera formation at Volcán Colima, Mexico, by a large large holocene volcanic debris avalanche

    Science.gov (United States)

    Luhr, James F.; Prestegaard, Karen L.

    1988-12-01

    About 4,300 years ago, 10 km 3 of the upper cone of ancestral Volcán Colima collapsed to the southwest leaving a horseshoe-shaped caldera 4 km in diameter. The collapse produced a massive volcanic debris avalanche deposit covering over 1550 km 2 on the southern flanks of the volcano and extending at least 70 km from the former summit. The avalanche followed a steep topographic gradient unobstructed by barriers, resulting in an unusually high area/volume ratio for the Colima deposit. The apparent coefficient of friction (fall height/distance traveled) for the Colima avalanche is 0.06, a low value similar to those of other large-volume deposits. The debris avalanche deposit contains 40-75% angular volcanic clasts from the ancestral cone, a small proportion of vesicular blocks that may be juvenile, and in distal exposures, rare carbonate clasts plucked from the underlying surface by the moving avalanche. Clasts range in size to over 20 m in diameter and are brecciated to different degrees, pulverized, and surrounded by a rock-flour matrix. The upper surface of the deposit shows prominent hummocky topography with closed depressions and surface boulders. A thick, coarse-grained, compositionally zoned scoria-fall layer on the upper northeastern slope of the volcano may have erupted at the time of collapse. A fine-grained surge layer is present beneath the avalanche deposit at one locality, apparently representing an initial blast event. Most of the missing volume of the ancestral volcano has since been restored at an average rate of 0.002 km 3/yr through repeated eruptions from the post-caldera cone. As a result, the southern slope of Volcán Colima may again be susceptible to collapse. Over 200,000 people are now living on primary or secondary deposits of the debris avalanche, and a repetition of this event would constitute a volcanic disaster of great magnitude. Ancestral Volcán Colima grew on the southern, trenchward flank of the earlier and larger volcano Nevado de

  7. Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Britvitch, I. [Swiss Federal Institute of Technology, CH-8092 Zurich (Switzerland)]. E-mail: Ilia.britvitch@psi.ch; Johnson, I. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Renker, D. [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stoykov, A. [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Lorenz, E. [Swiss Federal Institute of Technology, CH-8092 Zurich (Switzerland); Max Planck Institute for Physics, 80805 Munich (Germany)

    2007-02-01

    Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate.

  8. Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

    International Nuclear Information System (INIS)

    Britvitch, I.; Johnson, I.; Renker, D.; Stoykov, A.; Lorenz, E.

    2007-01-01

    Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate

  9. An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

    Science.gov (United States)

    Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

    2012-12-17

    An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

  10. Performance tests of developed silicon strip detector by using a 150 GeV electron beam

    International Nuclear Information System (INIS)

    Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

    2008-01-01

    We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

  11. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes/polymer composite thin film.

    Science.gov (United States)

    Rajanna, Pramod Mulbagal; Gilshteyn, Evgenia; Yagafarov, Timur; Alekseeva, Alena; Anisimov, Anton; Sergeev, Oleg; Neumueller, Alex; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert

    2018-01-09

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and a thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high quality SWCNTs with an enhanced conductivity by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with different SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit Jsc, open-circuit Voc, and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and efficiency of 3.4% under simulated one-sun AM 1.5G direct illumination. © 2018 IOP Publishing Ltd.

  12. A digital silicon photomultiplier with multiple time-to-digital converters

    Energy Technology Data Exchange (ETDEWEB)

    Garutti, Erika [University Hamburg (Germany); Silenzi, Alessandro [DESY, Hamburg (Germany); Xu, Chen [DESY, Hamburg (Germany); University Hamburg (Germany)

    2013-07-01

    A silicon photomultiplier (SiPM) with pixel level signal digitization and column-wise connected time-to-digital converters (TDCs) has been developed for an endoscopic Positron Emission Tomography (PET) detector. A digital SiPM has pixels consist of a single photon avalanche diode (SPAD) and circuit elements to optimize overall dark counts and temporal response. Compared with conventional analog SiPM, digital SiPM's direct signal route from SPAD to TDC improves single photon time resolution. In addition, using multiple TDCs can perform the statistical estimation of the time-of-arrival in multiple photon detection case such as readout of scintillation crystals. Characterization measurements of the prototype digital SiPM and a Monte-Carlo simulation to predict the timing performance of the PET detector are shown.

  13. Hybrid organic-inorganic heterojunctions for photovoltaic applications

    OpenAIRE

    Dietmüller, Roland

    2012-01-01

    Hybrid organic-inorganic bulk heterojunction solar cells based on silicon nanocrystals (Si-nc) have been realized and investigated. A photo-induced charge transfer could be demonstrated in composites made of silicon nanocrystals and poly(3-hexylthiophene) (P3HT) or [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) via light-induced electron spin resonance measurements. With bulk heterojunction solar cells made of P3HT/Si-nc composites in a sandwich structure, open-circuit voltages of up to 0....

  14. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Directory of Open Access Journals (Sweden)

    Yulong Zhang

    2018-05-01

    Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  15. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Science.gov (United States)

    Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

    2018-05-01

    High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  16. Large area avalanche MRS-photodiodes for nuclear spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ermalitski, F A; Zalesski, V B

    1996-12-31

    Problems of application of avalanche photodiodes (APD) in readout systems of nuclear spectrometers are considered. APD`s with a large sensitive area of a diameter 1-5 mm and a high multiplication coefficient 200-1000 are created. MPS-photodiodes provide for the energy resolution 80% at temperature 231 K for detecting gamma-quanta with energy 662 keV. 4 refs.

  17. Silicon technology-based micro-systems for atomic force microscopy/photon scanning tunnelling microscopy.

    Science.gov (United States)

    Gall-Borrut, P; Belier, B; Falgayrettes, P; Castagne, M; Bergaud, C; Temple-Boyer, P

    2001-04-01

    We developed silicon nitride cantilevers integrating a probe tip and a wave guide that is prolonged on the silicon holder with one or two guides. A micro-system is bonded to a photodetector. The resulting hybrid system enables us to obtain simultaneously topographic and optical near-field images. Examples of images obtained on a longitudinal cross-section of an optical fibre are shown.

  18. Statistical distributions of avalanche size and waiting times in an inter-sandpile cascade model

    Science.gov (United States)

    Batac, Rene; Longjas, Anthony; Monterola, Christopher

    2012-02-01

    Sandpile-based models have successfully shed light on key features of nonlinear relaxational processes in nature, particularly the occurrence of fat-tailed magnitude distributions and exponential return times, from simple local stress redistributions. In this work, we extend the existing sandpile paradigm into an inter-sandpile cascade, wherein the avalanches emanating from a uniformly-driven sandpile (first layer) is used to trigger the next (second layer), and so on, in a successive fashion. Statistical characterizations reveal that avalanche size distributions evolve from a power-law p(S)≈S-1.3 for the first layer to gamma distributions p(S)≈Sαexp(-S/S0) for layers far away from the uniformly driven sandpile. The resulting avalanche size statistics is found to be associated with the corresponding waiting time distribution, as explained in an accompanying analytic formulation. Interestingly, both the numerical and analytic models show good agreement with actual inventories of non-uniformly driven events in nature.

  19. Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

    Science.gov (United States)

    Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

    2017-12-12

    We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

  20. Electrochemical trench etching of silicon triggered via mechanical nanocontacts

    Energy Technology Data Exchange (ETDEWEB)

    Gassilloud, R.; Michler, J. [EMPA, Materials Science and Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland); Schmuki, P. [Department of Materials Science, LKO, University of Erlangen-Nuernberg, Martensstrasse 7, D-91058 Erlangen (Germany)

    2007-12-01

    We report a method to produce microstructures on silicon wafers using a microscratching technique followed by a subsequent electrochemical trench etching in hydrofluoric-based electrolyte. Micro-scratches are used to trigger macropore formation. We show that mask-less dissolved trenches with aspect ratios up to 1:7 are formed at the scratched regions on (0 0 1)Si surface. The micro-scratches orientate the macropores formation by aligning them in the scratching direction. We propose that dislocations formed during scratching are firstly dissolved leading to the formation of V-shape grooves. The V-shape geometries obtained by this way are used to initiate the macropores nucleation; i.e. due to the geometry, an avalanche current occurs at the grooves base and thus induces local dissolutions of the substrate. High rate local dissolutions are achieved by back-side illumination of the Si wafer. (author)

  1. Posttraumatic stress and other health consequences of catastrophic avalanches: A 16-year follow-up of survivors.

    Science.gov (United States)

    Thordardottir, Edda Bjork; Valdimarsdottir, Unnur Anna; Hansdottir, Ingunn; Resnick, Heidi; Shipherd, Jillian C; Gudmundsdottir, Berglind

    2015-05-01

    To date, no study has investigated the effects of avalanches on survivor's health beyond the first years. The aim of this study was to examine long-term health status 16 years after exposure to avalanches using a matched cohort design. Mental health, sleep quality and somatic symptoms among avalanche survivors (n=286) and non-exposed controls (n=357) were examined. Results showed that 16% of survivors currently experience avalanche-specific PTSD symptoms (PDS score>14). In addition, survivors presented with increased risk of PTSD hyperarousal symptoms (>85th percentile) (aRR=1.83; 98.3% CI [1.23-2.74]); sleep-related problems (PSQI score>5) (aRR=1.34; 95% CI [1.05-1.70]); PTSD-related sleep disturbances (PSQI-A score≥4) (aRR=1.86; 95% CI [1.30-2.67]); musculoskeletal and nervous system problems (aRR 1.43; 99% CI 1.06-1.93) and gastrointestinal problems (aRR 2.16; 99% CI 1.21-3.86) compared to the unexposed group. Results highlight the need for treatment for long-term PTSD symptoms and sleep disruption in disaster communities. Copyright © 2015 Elsevier Ltd. All rights reserved.

  2. Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

    International Nuclear Information System (INIS)

    He Ying; Wang Junan; Pei Changlong; Song Jizhong; Zhu Di; Chen Jie

    2010-01-01

    A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

  3. heat flow in a finite isolated pulsed avalanche semiconductor diode

    African Journals Online (AJOL)

    ES Obe

    1981-03-01

    Mar 1, 1981 ... high-power high-efficiency avalanche semiconductor devices. The ... computed, and useful practical design curves for a specified operation .... iv. For spherical shells of radius, ρ(x,y,z) = √x2+y2+z2. > R, the heat source.

  4. A position sensitive parallel plate avalanche counter

    International Nuclear Information System (INIS)

    Lombardi, M.; Tan Jilian; Potenza, R.; D'amico, V.

    1986-01-01

    A position sensitive parallel plate avalanche counter with a distributed constant delay-line-cathode (PSAC) is described. The strips formed on the printed board were served as the cathode and the delay line for readout of signals. The detector (PSAC) was operated in isobutane gas at the pressure range from 10 to 20 torr. The position resolution is better than 1 mm and the time resolution is about 350 ps, for 252 Cf fission-spectrum source

  5. Current oscillations in avalanche particle detectors with PNIPN-structure

    International Nuclear Information System (INIS)

    Lukin, K.A.

    1995-08-01

    The model of an avalanche high energy particle detector consisting of two pn-junctions, connected through an intrinsic semiconductor with a reverse biased voltage applied. This detector is able to generate the oscillatory response on the single particle passage through the structure. The possibility of oscillations leading to chaotic behaviour is pointed out

  6. Fabrication and characterization of aluminium hybrid composites reinforced with fly ash and silicon carbide through powder metallurgy

    Science.gov (United States)

    Bilal Naim Shaikh, Mohd; Arif, Sajjad; Arif Siddiqui, M.

    2018-04-01

    This paper reports the fabrication and characterization of aluminium hybrid composites (AMCs) reinforced with commonly available and inexpensive fly ash (FA, 0, 5, 10 and 15 wt.%) particles along silicon carbide (SiC) using powder metallurgy process. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were employed for microstructural characterization and phase identification respectively. Wear behaviour were investigated using pin-on-disc wear tester for the different combinations of wear parameters like load (10, 20 and 30 N), sliding speed (1.5, 2 and 2.5 m s‑1) and sliding distance (300, 600 and 900 m). SEM confirms the uniform distribution of FA and SiC in aluminium matrix. The hardness of Al/SiC/FA is increased by 20%–25% while wear rate decreased by 15%–40%. From wear analysis, sliding distance was the least significant parameter influencing the wear loss followed by applied load and sliding speed. To identify the mechanism of wear, worn out surface were also analysed by SEM.

  7. A simulated avalanche search and rescue mission induces temporary physiological and behavioural changes in military dogs.

    Science.gov (United States)

    Diverio, Silvana; Barbato, Olimpia; Cavallina, Roberta; Guelfi, Gabriella; Iaboni, Martina; Zasso, Renato; Di Mari, Walter; Santoro, Michele Matteo; Knowles, Toby G

    2016-09-01

    Saving human lives is of paramount importance in avalanche rescue missions. Avalanche military dogs represent an invaluable resource in these operations. However, their performance can be influenced by several environmental, social and transport challenges. If too severe, these are likely to activate a range of responses to stress, which might put at risk the dogs' welfare. The aim of this study was to assess the physiological and behavioural responses of a group of military dogs to a Simulated Avalanche Search and Rescue mission (SASR). Seventeen avalanche dogs from the Italian Military Force Guardia di Finanza (SAGF dogs) were monitored during a simulated search for a buried operator in an artificial avalanche area (SASR). Heart rate (HR), body temperature (RBT) and blood samples were collected at rest the day before the trial (T0), immediately after helicopter transport at the onset of the SASR (T1), after the discovery of the buried operator (T2) and 2h later (T3). Heart rate (HR), rectal body temperature (RBT), cortisol, aspartate aminotransferase (AST), creatine kinase (CK), non-esterified fatty acids (NEFA) and lactate dehydrogenase (LDH) were measured. During the search mission the behaviour of each SAGF dog was measured by focal animal sampling and qualitatively assessed by its handler and two observers. Inter-rater agreement was evaluated. Snow and environmental variables were also measured. All dogs successfully completed their search for the buried, simulated victim within 10min. The SASR was shown to exert significant increases on RBT, NEFA and cortisol (Pdog's search mission ability was found only for motivation, signalling behaviour, signs of stress and possessive reward playing. More time signalling was related to shorter search time. In conclusion, despite extreme environmental and training conditions only temporary physiological and behavioural changes were recorded in the avalanche dogs. Their excellent performance in successful simulated SASR

  8. FY 2000 report on the results of the development of technology for commercialization of the photovoltaic power system - Development of production technology of thin film solar cells. Development of production technology of low-cost/large-area modules (Development of production technology of application type new structure thin film solar cells/Development of production technology of amorphous silicon-thin film polycrystal silicon hybrid thin film solar cells); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Oyogata shinkozo hakumaku taiyodenchi no seizo gijutsu kaihatsu, Amorufasusilicon hakumaku takessho silicon hybrid hakumaku taiyodenchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    For the purpose of developing the application type new structure thin film solar cell that is low-cost, high-efficient and practical, a developmental study was made of production technology of amorphous silicon/thin film polycrystal silicon hybrid thin film solar cells, and the FY 2000 results were reported. In the study of the heightening of efficiency of the small area hybrid cell, a structure was adopted in which a transparent intermediate layer was installed between a-Si cell and bottom poly-Si cell, and the initial efficiency of 14.0% was obtained in the small area cell 1cm square. As to the large area hybrid module, the initial efficiency of 11.7% and maximum output of 44.9W were achieved in the large area substrate module with a size of 910 x 455mm. In the indoor/outdoor evaluation of the output of hybrid modules, conducted were the outdoor measurement and the output measurement made every season under the mock spectral light in two-light simulator. In summer, F.F. was improved by spectral gain and anneal effect, and the effective output about 8% higher was recognized in the module after stabilization. (NEDO)

  9. Graphene-on-dielectric micromembrane for optoelectromechanical hybrid devices

    DEFF Research Database (Denmark)

    Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil

    2013-01-01

    Due to their exceptional mechanical and optical properties, dielectric silicon nitride (SiN) micromembranes have become the centerpiece of many optomechanical experiments. Efficient capacitive coupling of the membrane to an electrical system would facilitate exciting hybrid optoelectromechanical ...

  10. A detector insert based on continuous scintillators for hybrid MR–PET imaging of the human brain

    Energy Technology Data Exchange (ETDEWEB)

    Rato Mendes, P., E-mail: pedro.rato@ciemat.es [CIEMAT, Avenida Complutense 40, 28040 Madrid (Spain); Cuerdo, R.; Sarasola, I.; García de Acilu, P.; Navarrete, J.; Vela, O.; Oller, J.C.; Cela, J.M. [CIEMAT, Avenida Complutense 40, 28040 Madrid (Spain); Núñez, L.; Pastrana, M. [Hospital Universitario Puerta de Hierro Majadahonda, Manuel de Falla 1, 28222 Majadahonda (Spain); Romero, L.; Willmott, C. [CIEMAT, Avenida Complutense 40, 28040 Madrid (Spain)

    2013-02-21

    We are developing a positron emission tomography (PET) insert for existing magnetic resonance (MR) equipment, aiming at hybrid MR–PET imaging. Our detector block design is based on trapezoid-shaped LYSO:Ce monolithic scintillators coupled to magnetically compatible Hamamatsu S8550-02 silicon avalanche photodiode (APD) matrices with a dedicated ASIC front-end readout from GammaMedica-Ideas (Fornebu, Norway). The detectors are position sensitive, capable of determining the incidence point of 511 keV gammas with an intrinsic spatial resolution on the order of 2 mm by means of supervised learning neural-network (NN) algorithms. These algorithms, apart from providing continuous coordinates, are also intrinsically corrected for depth of interaction effects and thus parallax-free. Recently we have implemented an advanced prototype featuring two heads with four detector blocks each and final front-end and readout electronics, improving the spatial resolution of reconstructed point source images down to 1.7 mm full width at half maximum (FWHM). Presently we are carrying out operational tests of components and systems under magnetic fields using a 3 T MR scanner. In this paper we present a description of our project, a summary of the results obtained with laboratory prototypes, and the strategy to build and install the complete system at the nuclear medicine department of a collaborating hospital.

  11. A detector insert based on continuous scintillators for hybrid MR–PET imaging of the human brain

    International Nuclear Information System (INIS)

    Rato Mendes, P.; Cuerdo, R.; Sarasola, I.; García de Acilu, P.; Navarrete, J.; Vela, O.; Oller, J.C.; Cela, J.M.; Núñez, L.; Pastrana, M.; Romero, L.; Willmott, C.

    2013-01-01

    We are developing a positron emission tomography (PET) insert for existing magnetic resonance (MR) equipment, aiming at hybrid MR–PET imaging. Our detector block design is based on trapezoid-shaped LYSO:Ce monolithic scintillators coupled to magnetically compatible Hamamatsu S8550-02 silicon avalanche photodiode (APD) matrices with a dedicated ASIC front-end readout from GammaMedica-Ideas (Fornebu, Norway). The detectors are position sensitive, capable of determining the incidence point of 511 keV gammas with an intrinsic spatial resolution on the order of 2 mm by means of supervised learning neural-network (NN) algorithms. These algorithms, apart from providing continuous coordinates, are also intrinsically corrected for depth of interaction effects and thus parallax-free. Recently we have implemented an advanced prototype featuring two heads with four detector blocks each and final front-end and readout electronics, improving the spatial resolution of reconstructed point source images down to 1.7 mm full width at half maximum (FWHM). Presently we are carrying out operational tests of components and systems under magnetic fields using a 3 T MR scanner. In this paper we present a description of our project, a summary of the results obtained with laboratory prototypes, and the strategy to build and install the complete system at the nuclear medicine department of a collaborating hospital

  12. Prediction of electromagnetic pulse generation by picosecond avalanches in high-pressure air

    International Nuclear Information System (INIS)

    Mayhall, D.J.; Yee, J.H.

    1993-01-01

    The gas avalanche switch is a laser-activated, high-voltage switch, consisting of a set of pulse-charged electrodes in a high-pressure gas. Induced electrons from a picosecond-scale laser pulse initiate an avalanche discharge between high-voltage and grounded electrodes. If the voltage, pressure, and dimensions are correct, the rapid avalanche, fueled by the immense number of electrons available in the gas, collapses the applied voltage in picoseconds and generates electromagnetic pulses with widths as short as 1-10 ps and 3 dB bandwidths of 20-120 GHz. With proper voltage or pressure detuning, wider pulses and lower bandwidths occur. In addition to picosecond electromagnetic pulse generation, application of this switch should result in ultra-fast Marx bank pulsers. A number of versions of the switch are possible. The simplest is a parallel plate capacitor, consisting of a gas between two parallel plate conductors. High voltage is applied across the two plates. A parallel plate, Blumlein geometry features a center electrode between two grounded parallel plates. This geometry emits a single pulse in each direction along the parallel plates. A frozen wave geometry with multiple, oppositely charged center electrodes will emit AC pulses. Series switches consisting of gas gaps between two electrodes are also possible

  13. Quantum Dot Laser for a Light Source of an Athermal Silicon Optical Interposer

    Directory of Open Access Journals (Sweden)

    Nobuaki Hatori

    2015-04-01

    Full Text Available This paper reports a hybrid integrated light source fabricated on a silicon platform using a 1.3 μm wavelength quantum dot array laser. Temperature insensitive characteristics up to 120 °C were achieved by the optimum quantum dot structure and laser structure. Light output power was obtained that was high enough to achieve an optical error-free link of a silicon optical interposer. Furthermore, we investigated a novel spot size convertor in a silicon waveguide suitable for a quantum dot laser for lower energy cost operation of the optical interposer.

  14. Progresses in the simulation of Resistive Plate Chambers in avalanche mode

    Energy Technology Data Exchange (ETDEWEB)

    Abbrescia, M.; Colaleo, A.; Iaselli, G.; Loddo, F.; Maggi, M.; Marangelli, B.; Natali, S.; Nuzzo, S.; Pugliese, G.; Ranieri, A.; Romano, F.; Altieri, S.; Bruno, G.; Gianini, G.; Ratti, S.P.; Viola, L.; Vitulo, P

    1999-08-01

    New results about the simulation of Resistive Plate Chambers are reported; particular emphasis is put in the understanding of charge spectra in regions where deviations from the pure avalanche mode of operation can be present.

  15. The Chimborazo sector collapse and debris avalanche : deposit characteristics as evidence of emplacement mechanisms

    OpenAIRE

    Bernard, B.; Vries de, B. V.; Barba, D.; Leyrit, H.; Robin, Claude; Alcaraz, S.; Samaniego, Pablo

    2008-01-01

    Chimborazo is a Late Pleistocene to Holocene stratovolcano located at the southwest end of the main Ecuadorian volcanic arc. It experienced a large sector collapse and debris avalanche (DA) of the initial edifice (CH-1). This left a 4 km wide scar, removing 8.0 +/- 0.5 km(3) of the edifice. The debris avalanche deposit (DAD) is abundantly exposed throughout the Riobamba Basin to the Rio Chambo, more than 35 km southeast of the volcano. The DAD averages a thickness of 40 m, covers about 280 km...

  16. Cataclysmic Rock Avalanche from El Capitan, Yosemite Valley, circa 3.6 ka

    Science.gov (United States)

    Stock, G. M.

    2008-12-01

    El Capitan in Yosemite Valley is one of the largest and most iconic granite faces in the world. Despite glacially steepened walls exceeding 90 degrees, a historic database shows relatively few rock falls from El Capitan in the past 150 years. However, a massive bouldery deposit beneath the southeast face suggests an earlier rock avalanche of unusually large size. Spatial analysis of airborne LiDAR data indicate that the rock avalanche deposit has a volume of ~2.70 x 106 m3, a maximum thickness of 18 m, and a runout distance of 660 m, roughly twice the horizontal extent of the adjacent talus. The deposit is very coarse on its distal edge, with individual boulder volumes up to 2500 m3. Cosmogenic 10Be exposure dates from boulders distributed across the deposit confirm this interpretation. Four 10Be samples are tightly clustered between 3.5 and 3.8 ka, with a mean age of 3.6 +/- 0.6 ka. A fifth sample gives a much older age of 22.0 ka, but a glacier occupied Yosemite Valley at this time, prohibiting deposition; thus, the older age likely results from exposure on the cliff face prior to failure. The similarity of ages and overall morphology suggest that the entire deposit formed during a single event. The mean exposure age coincides with inferred Holocene rupture of the northern Owens Valley and/or White Mountain fault(s) between 3.3 and 3.8 ka (Lee et al., 2001; Bacon and Pezzopane, 2007). This time coincidence, combined with the fact that historic rupture of the Owens Valley fault in A.D. 1872 generated numerous large rock falls in Yosemite Valley, strongly suggests that the El Capitan rock avalanche was triggered by a seismic event along the eastern margin of the Sierra Nevada circa 3.6 ka. As there is not an obvious "scar" on the expansive southeast face, the exact source area of the rock avalanche is not yet known. Detrital apatite U-Th/(He) thermochronometry can determine the elevation(s) from which rock fall boulders originate, but significant inter-sample age

  17. Data collapse and critical dynamics in neuronal avalanche data

    Science.gov (United States)

    Butler, Thomas; Friedman, Nir; Dahmen, Karin; Beggs, John; Deville, Lee; Ito, Shinya

    2012-02-01

    The tasks of information processing, computation, and response to stimuli require neural computation to be remarkably flexible and diverse. To optimally satisfy the demands of neural computation, neuronal networks have been hypothesized to operate near a non-equilibrium critical point. In spite of their importance for neural dynamics, experimental evidence for critical dynamics has been primarily limited to power law statistics that can also emerge from non-critical mechanisms. By tracking the firing of large numbers of synaptically connected cortical neurons and comparing the resulting data to the predictions of critical phenomena, we show that cortical tissues in vitro can function near criticality. Among the most striking predictions of critical dynamics is that the mean temporal profiles of avalanches of widely varying durations are quantitatively described by a single universal scaling function (data collapse). We show for the first time that this prediction is confirmed in neuronal networks. We also show that the data have three additional features predicted by critical phenomena: approximate power law distributions of avalanche sizes and durations, samples in subcritical and supercritical phases, and scaling laws between anomalous exponents.

  18. Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Liu Fei; Yang Sen; Zhou Dong; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed. (paper)

  19. Secondary instability in drift wave turbulence as a mechanism for avalanche and zonal flow formation

    International Nuclear Information System (INIS)

    Diamond, P.H.; Champeaux, S.; Malkov, M.

    2001-01-01

    We report on recent developments in the theory of secondary instability in drift-ITG turbulence. Specifically, we explore secondary instability as a mechanism for avalanche formation. A theory of radially extended streamer cell formation and self-regulation is presented. Aspects of streamer structure and dynamics are used to estimate the variance of the drift-wave induced flux. The relation between streamer cell structures and the avalanche concept is discussed, as are the implications of our results for transport modeling. (author)

  20. Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode

    International Nuclear Information System (INIS)

    Mallick, Shubhrangshu; Banerjee, Koushik; Ghosh, Siddhartha; Plis, Elena; Rodriguez, Jean Baptiste; Krishna, Sanjay; Grein, Christoph

    2007-01-01

    Eye-safe midwavelength infrared InAs-GaSb strain layer superlattice p + -n - -n homojunction avalanche photodiodes (APDs) grown by solid source molecular beam epitaxy were fabricated and characterized. Maximum multiplication gain of 1800 was measured at -20 V at 77 K. Excess noise factors between 0.8 and 1.2 were measured up to gain of 300. Gain of 200 was measured at 120 K. Exponential nature of the gain as a function of reverse bias along with low excess noise factor at higher gain confirms single carrier electron-only impact ionization in the avalanche regime. Decrease in the multiplication gain at higher temperatures correlates with standard APD characteristics

  1. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film

    Science.gov (United States)

    Rajanna, Pramod M.; Gilshteyn, Evgenia P.; Yagafarov, Timur; Aleekseeva, Alena K.; Anisimov, Anton S.; Neumüller, Alex; Sergeev, Oleg; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert G.

    2018-03-01

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with varying SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit J sc , open-circuit V oc , and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and an efficiency of 3.4% under simulated one-sun AM 1.5 G direct illumination.

  2. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Energy Technology Data Exchange (ETDEWEB)

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  3. The characteristic patterns of neuronal avalanches in mice under anesthesia and at rest: An investigation using constrained artificial neural networks

    Science.gov (United States)

    Knöpfel, Thomas; Leech, Robert

    2018-01-01

    Local perturbations within complex dynamical systems can trigger cascade-like events that spread across significant portions of the system. Cascades of this type have been observed across a broad range of scales in the brain. Studies of these cascades, known as neuronal avalanches, usually report the statistics of large numbers of avalanches, without probing the characteristic patterns produced by the avalanches themselves. This is partly due to limitations in the extent or spatiotemporal resolution of commonly used neuroimaging techniques. In this study, we overcome these limitations by using optical voltage (genetically encoded voltage indicators) imaging. This allows us to record cortical activity in vivo across an entire cortical hemisphere, at both high spatial (~30um) and temporal (~20ms) resolution in mice that are either in an anesthetized or awake state. We then use artificial neural networks to identify the characteristic patterns created by neuronal avalanches in our data. The avalanches in the anesthetized cortex are most accurately classified by an artificial neural network architecture that simultaneously connects spatial and temporal information. This is in contrast with the awake cortex, in which avalanches are most accurately classified by an architecture that treats spatial and temporal information separately, due to the increased levels of spatiotemporal complexity. This is in keeping with reports of higher levels of spatiotemporal complexity in the awake brain coinciding with features of a dynamical system operating close to criticality. PMID:29795654

  4. Avalanche analysis from multi-electrode ensemble recordings in cat, monkey and human cerebral cortex during wakefulness and sleep.

    Directory of Open Access Journals (Sweden)

    Nima eDehghani

    2012-08-01

    Full Text Available Self-organized critical states are found in many natural systems, from earthquakes to forest fires, they have also been observed in neural systems, particularly, in neuronal cultures. However, the presence of critical states in the awake brain remains controversial. Here, we compared avalanche analyses performed on different in vivo preparations during wakefulness, slow-wave sleep and REM sleep, using high-density electrode arrays in cat motor cortex (96 electrodes, monkey motor cortex and premotor cortex and human temporal cortex (96 electrodes in epileptic patients. In neuronal avalanches defined from units (up to 160 single units, the size of avalanches never clearly scaled as power-law, but rather scaled exponentially or displayed intermediate scaling. We also analyzed the dynamics of local field potentials (LFPs and in particular LFP negative peaks (nLFPs among the different electrodes (up to 96 sites in temporal cortex or up to 128 sites in adjacent motor and pre-motor cortices. In this case, the avalanches defined from nLFPs displayed power-law scaling in double logarithmic representations, as reported previously in monkey. However, avalanche defined as positive LFP (pLFP peaks, which are less directly related to neuronal firing, also displayed apparent power-law scaling. Closer examination of this scaling using the more reliable cumulative distribution function (CDF and other rigorous statistical measures, did not confirm power-law scaling. The same pattern was seen for cats, monkey and human, as well as for different brain states of wakefulness and sleep. We also tested other alternative distributions. Multiple exponential fitting yielded optimal fits of the avalanche dynamics with bi-exponential distributions. Collectively, these results show no clear evidence for power-law scaling or self-organized critical states in the awake and sleeping brain of mammals, from cat to man.

  5. Group Dynamics and Decision Making: Backcountry Recreationists in Avalanche Terrain

    Science.gov (United States)

    Bright, Leslie Shay

    2010-01-01

    The purpose of this study was to describe and determine the prevalence of decision-making characteristics of recreational backcountry groups when making a decision of where to travel and ride in avalanche terrain from the perspective of individuals. Decision-making characteristics encompassed communication, decision-making processes, leadership,…

  6. The AMS silicon tracker readout, performance results with minimum ionizing particles

    CERN Document Server

    Alpat, B; Battiston, R; Bourquin, Maurice; Burger, W J; Extermann, Pierre; Chang, Y H; Hou, S R; Pauluzzi, M; Produit, N; Qiu, S; Rapin, D; Ribordy, R; Toker, O; Wu, S X

    2000-01-01

    First results for the AMS silicon tracker readout performance are presented. Small 20.0*20.0*0.300 mm/sup 3/ silicon microstrip detectors were installed in a 50 GeV electron beam at CERN. The detector readout consisted of prototypes of the tracker data reduction card equipped with a 12-bit ADC and the tracker frontend hybrid with VA_hdr readout chips. The system performance is assessed in terms of signal-to-noise, position resolution, and efficiency. (13 refs).

  7. Analysis of transit time spread on FBK silicon photomultipliers

    International Nuclear Information System (INIS)

    Acerbi, F.; Gola, A.; Ferri, A.; Zorzi, N.; Paternoster, G.; Piemonte, C.

    2015-01-01

    In this paper we studied one of the aspects potentially limiting the single-photon time-resolution (SPTR) of the silicon photomultiplier (SiPM): the transit time spread (TTS). We illuminated the SiPM in different positions with a fast-pulsed laser collimated to a circular spot of 0.2 mm-diameter and acquired bi-dimensional maps of the avalanche-signal arrival time of RGB and RGB-HD SiPMs, produced at FBK. We studied the effect of both the number of bonding wires connecting the device to the package and the layout of the top-metal connection (on the device). We found that the TTS does not simply depend on the trace length between the cell and the bonding pad and it could vary in the range between tens of picoseconds (with 3 bonding connections) to more than one hundred of picoseconds (with one connection)

  8. Tuning magnetization avalanches in Mn12-acetate

    Science.gov (United States)

    Wen, Bo; McHugh, S.; Ma, Xiang; Sarachik, M. P.; Myasoedov, Y.; Shtrikman, H.; Zeldov, E.; Bagai, R.; Christou, G.

    2009-03-01

    We report the results of a systematic study of magnetic avalanches (abrupt magnetization reversals) in the molecular magnet Mn12-acetate using a micron-sized Hall sensor array. Measurements were taken for: (a) fixed magnetic field (constant barrier against spin reversal); and (b) fixed energy release obtained by adjusting the barrier and δM. A detailed comparison with the theory of magnetic deflagration of Garanin and Chudnovsky [1] will be presented and discussed. [1] D. A. Garanin and E. M. Chudnovsky, Phys. Rev. B 76, 054410 (2007)

  9. Readout of scintillator light with avalanche photodiodes for positron emission tomography

    International Nuclear Information System (INIS)

    Chen, Ruru; Fremout, A.; Tavernier, S.; Bruyndonckx, P.; Clement, D.; Loude, J.-F.; Morel, C.

    1999-01-01

    The noise properties and other relevant characteristics of avalanche photodiodes have been investigated with the perspective of replacing photomultiplier tubes in positron emission tomography. It is clearly demonstrated that they are a valid alternative to photomultiplier tubes in this application

  10. Characteristics of debris avalanche deposits inferred from source volume estimate and hummock morphology around Mt. Erciyes, central Turkey

    Science.gov (United States)

    Hayakawa, Yuichi S.; Yoshida, Hidetsugu; Obanawa, Hiroyuki; Naruhashi, Ryutaro; Okumura, Koji; Zaiki, Masumi; Kontani, Ryoichi

    2018-02-01

    Debris avalanches caused by volcano sector collapse often form characteristic depositional landforms such as hummocks. Sedimentological and geomorphological analyses of debris avalanche deposits (DADs) are crucial to clarify the size, mechanisms, and emplacement of debris avalanches. We describe the morphology of hummocks on the northeastern flank of Mt. Erciyes in Kayseri, central Turkey, likely formed in the late Pleistocene. Using a remotely piloted aircraft system (RPAS) and the structure-from-motion and multi-view stereo (SfM-MVS) photogrammetry, we obtained high-definition digital elevation model (DEM) and orthorectified images of the hummocks to investigate their geometric features. We estimated the source volume of the DAD by reconstructing the topography of the volcano edifice using a satellite-based DEM. We examined the topographic cross sections based on the slopes around the scar regarded as remnant topography. Spatial distribution of hummocks is anomalously concentrated at a certain distance from the source, unlike those that follow the distance-size relationship. The high-definition land surface data by RPAS and SfM revealed that many of the hummocks are aligned toward the flow direction of the debris avalanche, suggesting that the extensional regime of the debris avalanche was dominant. However, some displaced hummocks were also found, indicating that the compressional regime of the flow contributed to the formation of hummocks. These indicate that the flow and emplacement of the avalanche were constrained by the topography. The existing caldera wall forced the initial eastward flow to move northward, and the north-side caldera wall forced the flow into the narrow and steepened outlet valley where the sliding debris underwent a compressional regime, and out into the unconfined terrain where the debris was most likely emplaced on an extensional regime. Also, the estimated volume of 12-15 × 108 m3 gives a mean thickness of 60-75 m, which is much

  11. A high current, high speed pulser using avalanche transistors

    International Nuclear Information System (INIS)

    Hosono, Yoneichi; Hasegawa, Ken-ichi

    1985-01-01

    A high current, high speed pulser for the beam pulsing of a linear accelerator is described. It uses seven avalanche transistors in cascade. Design of a trigger circuit to obtain fast rise time is discussed. The characteristics of the pulser are : (a) Rise time = 0.9 ns (FWHM) and (d) Life time asymptotically equals 2000 -- 3000 hr (at 50 Hz). (author)

  12. Kinetic modelling of runaway electron avalanches in tokamak plasmas.

    Czech Academy of Sciences Publication Activity Database

    Nilsson, E.; Decker, J.; Peysson, Y.; Granetz, R.S.; Saint-Laurent, F.; Vlainic, Milos

    2015-01-01

    Roč. 57, č. 9 (2015), č. článku 095006. ISSN 0741-3335 EU Projects: European Commission(XE) 633053 - EUROfusion Institutional support: RVO:61389021 Keywords : plasma physics * runaway electrons * knock-on collisions * tokamak * Fokker-Planck * runaway avalanches Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.404, year: 2015

  13. Snow avalanche hazard of the Krkonose National Park, Czech Republic

    Czech Academy of Sciences Publication Activity Database

    Blahůt, Jan; Klimeš, Jan; Balek, Jan; Hájek, P.; Červená, L.; Lysák, J.

    2017-01-01

    Roč. 13, č. 2 (2017), s. 86-90 ISSN 1744-5647 R&D Projects: GA MV VG20132015115 Institutional support: RVO:67985891 Keywords : snow avalanches * hazard * inventory * hazard mitigation * Krkonoše Subject RIV: DE - Earth Magnetism, Geodesy, Geography OBOR OECD: Physical geography Impact factor: 2.174, year: 2016

  14. ATLAS SCT - Progress on the Silicon Modules

    CERN Multimedia

    Tyndel, M.

    The ATLAS SCT consists of 4088 silicon modules. Each module is made up of 4 silicon sensors with 1536 readout strips. Individual strips are connected to FE amplifiers, discriminators and pipelines on the module, i.e. there are 12 radiation hard ASICs, each containing 128 channels on the module. The sensors and the ASICs were developed for the ATLAS experiment and production is proceeding smoothly with over half the components delivered. The components of a module - 4 silicon sensors, a Cu/polyimide hybrid and pitch adaptor, and 12 ASICs - need to be carefully and precisely assembled onto a carbon and ceramic framework, which supports the module and removes the heat. Eleven production clusters are preparing to carry this out over the next two years. An important milestone for the barrel modules has been passed with the first cluster (KEK) now in production (~40 modules produced). A second cluster UK-B has qualified by producing five modules within specification (see below) and is about to start production. T...

  15. Hybridization assay of insect antifreezing protein gene by novel multilayered porous silicon nucleic acid biosensor.

    Science.gov (United States)

    Lv, Xiaoyi; Chen, Liangliang; Zhang, Hongyan; Mo, Jiaqing; Zhong, Furu; Lv, Changwu; Ma, Ji; Jia, Zhenhong

    2013-01-15

    A fabrication of a novel simple porous silicon polybasic photonic crystal with symmetrical structure has been reported as a nucleic acid biosensor for detecting antifreeze protein gene in insects (Microdera puntipennis dzhungarica), which would be helpful in the development of some new transgenic plants with tolerance of freezing stress. Compared to various porous silicon-based photonic configurations, porous silicon polytype layered structure is quite easy to prepare and shows more stability; moreover, polybasic photonic crystals with symmetrical structure exhibit interesting optical properties with a sharp resonance in the reflectance spectrum, giving a higher Q factor which causes higher sensitivity for sensing performance. In this experiment, DNA oligonucleotides were immobilized into the porous silicon pores using a standard crosslink chemistry method. The porous silicon polybasic symmetrical structure sensor possesses high specificity in performing controlled experiments with non-complementary DNA. The detection limit was found to be 21.3nM for DNA oligonucleotides. The fabricated multilayered porous silicon-based DNA biosensor has potential commercial applications in clinical chemistry for determination of an antifreeze protein gene or other genes. Copyright © 2012 Elsevier B.V. All rights reserved.

  16. Investigation of a Mesoporous Silicon Based Ferromagnetic Nanocomposite

    Directory of Open Access Journals (Sweden)

    Roca AG

    2009-01-01

    Full Text Available Abstract A semiconductor/metal nanocomposite is composed of a porosified silicon wafer and embedded ferromagnetic nanostructures. The obtained hybrid system possesses the electronic properties of silicon together with the magnetic properties of the incorporated ferromagnetic metal. On the one hand, a transition metal is electrochemically deposited from a metal salt solution into the nanostructured silicon skeleton, on the other hand magnetic particles of a few nanometres in size, fabricated in solution, are incorporated by immersion. The electrochemically deposited nanostructures can be tuned in size, shape and their spatial distribution by the process parameters, and thus specimens with desired ferromagnetic properties can be fabricated. Using magnetite nanoparticles for infiltration into porous silicon is of interest not only because of the magnetic properties of the composite material due to the possible modification of the ferromagnetic/superparamagnetic transition but also because of the biocompatibility of the system caused by the low toxicity of both materials. Thus, it is a promising candidate for biomedical applications as drug delivery or biomedical targeting.

  17. Cosmogenic Nuclide Exposure Dating of the Tiltill Rock Avalanche, Yosemite National Park

    Science.gov (United States)

    Ford, K. R.; Pluhar, C. J.; Stone, J. O.; Stock, G. M.; Zimmerman, S. R.

    2013-12-01

    Yosemite National Park serves as an excellent natural laboratory for studying rock falls and rock avalanches because these are the main processes modifying the nearly vertical slopes of this recently glaciated landscape. Mass wasting represents a significant hazard in the region and the database of previous rock falls and other mass wasting events in Yosemite is extensive, dating back to the mid-1800s. However, this record is too short to capture the recurrence characteristics and triggering mechanisms of the very largest events, necessitating studies of the geologic record of mass wasting. Rock falls and rock avalanches are readily dated by cosmogenic nuclide methods due to their instantaneous formation, and results can be tied to triggering events such as seismic activity (e.g. Stock et al., 2009). Here, we apply exposure dating to the Holocene Tiltill rock avalanche north of Hetch Hetchy Reservoir. The deposit comprises what appear to be two separate lobes of rock and debris, yielding a total volume of ~3.1 x 106 m3. Assuming an erosion rate of 0.0006 cm/yr and neglecting snowpack shielding, preliminary data suggest a mean exposure age of 11,000 + 600 year B.P. for both deposits, indicating that they were emplaced in a single event. The age of the Tiltill 'slide' is similar to earthquakes on the Owens Valley Fault between 10,800 + 600 and 10,200 + 200 cal year B.P. (Bacon, 2007) and the White Mountain Fault, ~10,000 cal year B.P. (Reheis, 1996; DePolo, 1989). Given that movement on the Owens Valley fault in 1872 caused a number of rock falls in Yosemite and the coincidence of ages between the Tiltill 'slide' and paleoseismic events, a large earthquake in Eastern Sierra Nevada may have triggered this event. Other trigger events are also possibilities, but only through compilation of a database of large rock avalanches can statistically significant groupings of events begin to demonstrate whether seismic triggering is a dominant process.

  18. Gold nanorods-silicone hybrid material films and their optical limiting property

    Science.gov (United States)

    Li, Chunfang; Qi, Yanhai; Hao, Xiongwen; Peng, Xue; Li, Dongxiang

    2015-10-01

    As a kind of new optical limiting materials, gold nanoparticles have optical limiting property owing to their optical nonlinearities induced by surface plasmon resonance (SPR). Gold nanorods (GNRs) possess transversal SPR absorption and tunable longitudinal SPR absorption in the visible and near-infrared region, so they can be used as potential optical limiting materials against tunable laser pulses. In this letter, GNRs were prepared using seed-mediated growth method and surface-modified by silica coating to obtain good dispersion in polydimethylsiloxane prepolymers. Then the silicone rubber films doped with GNRs were prepared after vulcanization, whose optical limiting property and optical nonlinearity were investigated. The silicone rubber samples doped with more GNRs were found to exhibit better optical limiting performance.

  19. Radiation damage effect on avalanche photodiodes

    CERN Document Server

    Baccaro, S; Cavallari, F; Da Ponte, V; Deiters, K; Denes, P; Diemoz, M; Kirn, Th; Lintern, A L; Longo, E; Montecchi, M; Musienko, Y; Pansart, J P; Renker, D; Reucroft, S; Rosi, G; Rusack, R; Ruuska, D; Stephenson, R; Torbet, M J

    1999-01-01

    Avalanche Photodiodes have been chosen as photon sensors for the electromagnetic calorimeter of the CMS experiment at the LHC. These sensors should operate in the 4T magnetic field of the experiment. Because of the high neutron radiation in the detector extensive studies have been done by the CMS collaboration on the APD neutron radiation damage. The characteristics of these devices after irradiation have been analized, with particular attention to the quantum efficiency and the dark current. The recovery of the radiation induced dark current has been studied carefully at room temperature and at slightly lower and higher temperatures. The temperature dependence of the defects decay-time has been evaluated.

  20. Optically controlled redshift switching effects in hybrid fishscale metamaterials

    Science.gov (United States)

    Wang, Yu; Zhu, Jinwei; Zhang, Hao; Zhang, Wenxing; Dong, Guohua; Ye, Peng; Lv, Tingting; Zhu, Zheng; Li, Yuxiang; Guan, Chunying; Shi, Jinhui

    2018-05-01

    We numerically demonstrate optically controlled THz response in a hybrid fishscale metamaterial with embedded photoconductive silicon at oblique incidence of TE wave. The oblique incidence allows excitation of Fano-type trapped mode resonance in a 2-fold rotational symmetric metamaterial. The hybrid fishscale metamaterial exhibits an optically controlled redshift switching effect in the THz range. The switching effect is dominated by the conductivity of the silicon instead of mechanically adjusting angles of incidence. The tuning frequency range is up to 0.3THz with a large modulation depth and high transmission in the "ON" state. The fishscale metamaterial-based switching has been experimentally verified by its microwave counterpart integrated by variable resistors. Our work provides an alternative route to realize tunable Fano-type response in metamaterials and is of importance to active manipulation, sensing and switching of THz waves in practical applications.

  1. Scintillator high-gain avalanche rushing photoconductor active-matrix flat panel imager: zero-spatial frequency x-ray imaging properties of the solid-state SHARP sensor structure.

    Science.gov (United States)

    Wronski, M; Zhao, W; Tanioka, K; Decrescenzo, G; Rowlands, J A

    2012-11-01

    The authors are investigating the feasibility of a new type of solid-state x-ray imaging sensor with programmable avalanche gain: scintillator high-gain avalanche rushing photoconductor active matrix flat panel imager (SHARP-AMFPI). The purpose of the present work is to investigate the inherent x-ray detection properties of SHARP and demonstrate its wide dynamic range through programmable gain. A distributed resistive layer (DRL) was developed to maintain stable avalanche gain operation in a solid-state HARP. The signal and noise properties of the HARP-DRL for optical photon detection were investigated as a function of avalanche gain both theoretically and experimentally, and the results were compared with HARP tube (with electron beam readout) used in previous investigations of zero spatial frequency performance of SHARP. For this new investigation, a solid-state SHARP x-ray image sensor was formed by direct optical coupling of the HARP-DRL with a structured cesium iodide (CsI) scintillator. The x-ray sensitivity of this sensor was measured as a function of avalanche gain and the results were compared with the sensitivity of HARP-DRL measured optically. The dynamic range of HARP-DRL with variable avalanche gain was investigated for the entire exposure range encountered in radiography∕fluoroscopy (R∕F) applications. The signal from HARP-DRL as a function of electric field showed stable avalanche gain, and the noise associated with the avalanche process agrees well with theory and previous measurements from a HARP tube. This result indicates that when coupled with CsI for x-ray detection, the additional noise associated with avalanche gain in HARP-DRL is negligible. The x-ray sensitivity measurements using the SHARP sensor produced identical avalanche gain dependence on electric field as the optical measurements with HARP-DRL. Adjusting the avalanche multiplication gain in HARP-DRL enabled a very wide dynamic range which encompassed all clinically relevant

  2. Scintillator high-gain avalanche rushing photoconductor active-matrix flat panel imager: Zero-spatial frequency x-ray imaging properties of the solid-state SHARP sensor structure

    International Nuclear Information System (INIS)

    Wronski, M.; Zhao, W.; Tanioka, K.; DeCrescenzo, G.; Rowlands, J. A.

    2012-01-01

    Purpose: The authors are investigating the feasibility of a new type of solid-state x-ray imaging sensor with programmable avalanche gain: scintillator high-gain avalanche rushing photoconductor active matrix flat panel imager (SHARP-AMFPI). The purpose of the present work is to investigate the inherent x-ray detection properties of SHARP and demonstrate its wide dynamic range through programmable gain. Methods: A distributed resistive layer (DRL) was developed to maintain stable avalanche gain operation in a solid-state HARP. The signal and noise properties of the HARP-DRL for optical photon detection were investigated as a function of avalanche gain both theoretically and experimentally, and the results were compared with HARP tube (with electron beam readout) used in previous investigations of zero spatial frequency performance of SHARP. For this new investigation, a solid-state SHARP x-ray image sensor was formed by direct optical coupling of the HARP-DRL with a structured cesium iodide (CsI) scintillator. The x-ray sensitivity of this sensor was measured as a function of avalanche gain and the results were compared with the sensitivity of HARP-DRL measured optically. The dynamic range of HARP-DRL with variable avalanche gain was investigated for the entire exposure range encountered in radiography/fluoroscopy (R/F) applications. Results: The signal from HARP-DRL as a function of electric field showed stable avalanche gain, and the noise associated with the avalanche process agrees well with theory and previous measurements from a HARP tube. This result indicates that when coupled with CsI for x-ray detection, the additional noise associated with avalanche gain in HARP-DRL is negligible. The x-ray sensitivity measurements using the SHARP sensor produced identical avalanche gain dependence on electric field as the optical measurements with HARP-DRL. Adjusting the avalanche multiplication gain in HARP-DRL enabled a very wide dynamic range which encompassed all

  3. Burial duration, depth and air pocket explain avalanche survival patterns in Austria and Switzerland.

    Science.gov (United States)

    Procter, Emily; Strapazzon, Giacomo; Dal Cappello, Tomas; Zweifel, Benjamin; Würtele, Andreas; Renner, Andreas; Falk, Markus; Brugger, Hermann

    2016-08-01

    To calculate the first Austrian avalanche survival curve and update a Swiss survival curve to explore survival patterns in the Alps. Avalanche accidents occurring between 2005/06 and 2012/13 in Austria and Switzerland were collected. Completely buried victims (i.e. burial of the head and chest) in open terrain with known outcome (survived or not survived) were included in the analysis. Extrication and survival curves were calculated using the Turnbull algorithm, as in previous studies. 633 of the 796 completely buried victims were included (Austria n=333, Switzerland n=300). Overall survival was 56% (Austria 59%; Switzerland 52%; p=0.065). Time to extrication was shorter in Austria for victims buried ≤60min (p15min. The survival curves resembled those previously published and support the idea that underlying survival patterns are reproducible. The results are in accordance with current recommendations for management of avalanche victims and serve as a reminder that expedient companion rescue within a few minutes is critical for survival. An air pocket was shown to be a positive prognostic factor for survival. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  4. Azimuthal spread of the avalanche in proportional chambers

    International Nuclear Information System (INIS)

    Okuno, H.; Fischer, J.; Radeka, V.; Walenta, A.H.

    1978-10-01

    The angular distribution of the avalanche around the anode wire in the gas proportional counter is determined by measuring the distribution of positive ions arriving on cathode strips surrounding the anode wire for each single event. The shape and width of the distribution depend on such factors as the gas gain, the anode diameter, the counting gas and the primary ionization density. Effects of these factors are studied systematically, and their importance for practical counter applications is discussed

  5. Study of a silicon photodetector thermal stabilization using a Peltier cell

    International Nuclear Information System (INIS)

    Foschi, E.; Levi, G.; Quadrani, L.; Sbarra, C.; Guandalini, C.; Zuffa, M.; Sbarra, C.

    2007-01-01

    In recent years a new type of silicon photon detection device (SiPM) has been developed by many groups. These devices have strong advantages in comparison to normal photomultipliers tubes (PMT) but, being made by an array of avalanche photo diodes operated in Geiger mode, are much more sensitive to temperature changes than standard PMTs. Typical SiPM gain, in fact, varies from 3 to 5 percent per Celsius degree. In space environment, where operative temperature can change from -40 deg.C to 50 deg.C, a definitive temperature stabilization is needed. In order to use SiPMs in space we have developed a thermoelectric model of a Peltier cell that allows us to simulate the final detector circuit assembly predicting the operative temperatures and the adsorbed powers. The characteristics of the model and the obtained results are shown. (authors)

  6. Lasing in silicon–organic hybrid waveguides

    Science.gov (United States)

    Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

    2016-01-01

    Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry. PMID:26949229

  7. Subsampling effects in neuronal avalanche distributions recorded in vivo

    Directory of Open Access Journals (Sweden)

    Munk Matthias HJ

    2009-04-01

    Full Text Available Abstract Background Many systems in nature are characterized by complex behaviour where large cascades of events, or avalanches, unpredictably alternate with periods of little activity. Snow avalanches are an example. Often the size distribution f(s of a system's avalanches follows a power law, and the branching parameter sigma, the average number of events triggered by a single preceding event, is unity. A power law for f(s, and sigma = 1, are hallmark features of self-organized critical (SOC systems, and both have been found for neuronal activity in vitro. Therefore, and since SOC systems and neuronal activity both show large variability, long-term stability and memory capabilities, SOC has been proposed to govern neuronal dynamics in vivo. Testing this hypothesis is difficult because neuronal activity is spatially or temporally subsampled, while theories of SOC systems assume full sampling. To close this gap, we investigated how subsampling affects f(s and sigma by imposing subsampling on three different SOC models. We then compared f(s and sigma of the subsampled models with those of multielectrode local field potential (LFP activity recorded in three macaque monkeys performing a short term memory task. Results Neither the LFP nor the subsampled SOC models showed a power law for f(s. Both, f(s and sigma, depended sensitively on the subsampling geometry and the dynamics of the model. Only one of the SOC models, the Abelian Sandpile Model, exhibited f(s and sigma similar to those calculated from LFP activity. Conclusion Since subsampling can prevent the observation of the characteristic power law and sigma in SOC systems, misclassifications of critical systems as sub- or supercritical are possible. Nevertheless, the system specific scaling of f(s and sigma under subsampling conditions may prove useful to select physiologically motivated models of brain function. Models that better reproduce f(s and sigma calculated from the physiological

  8. High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Xianshu eLuo

    2015-04-01

    Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

  9. CERN manufactured hybrid photon detectors

    CERN Multimedia

    Maximilien Brice

    2004-01-01

    These hybrid photon detectors (HPDs) produce an electric signal from a single photon. An electron is liberated from a photocathode and accelerated to a silicon pixel array allowing the location of the photon on the cathode to be recorded. The electronics and optics for these devices have been developed in close collaboration with industry. HPDs have potential for further use in astrophysics and medical imaging.

  10. Reforestation and land use change as drivers for a decrease of avalanche damage in mid-latitude mountains (NW Spain)

    Science.gov (United States)

    García-Hernández, Cristina; Ruiz-Fernández, Jesús; Sánchez-Posada, Covadonga; Pereira, Susana; Oliva, Marc; Vieira, Gonçalo

    2017-06-01

    Natural conditions that explain the triggering of snow avalanches are becoming better-known, but our understanding of how socio-environmental changes can influence the occurrence of damaging avalanches is still limited. This study analyses the evolution of snow avalanche damage in the Asturian Massif (NW Spain) between 1800 and 2015, paying special attention to changes in land-use and land-cover patterns. A damage index has been performed using historical sources, photointerpretation and fieldwork-based data, which were introduced in a GIS and processed by means of statistical analysis. Mapping allowed connecting spatiotemporal variations of damage and changes in human-environment interactions. The total number of victims was 342 (192 dead and 150 injured). Results show stability in the number of avalanches during the study period, but a progressive decrease in the damage per avalanche. Changes in land use explain the evolution of damage and its spatial/temporal behaviour. The role played by vegetation cover is at the root of this process: damage was the highest during the late 19th and early 20th centuries, when a massive deforestation process affected the protective forest. This deforestation was the result of demographic growth and intensive grazing, disentailment laws and emerging coal mining. Since the mid-20th century, the transformation of a traditional land-management system based on overexploitation into a system based on land marginalization and reforestation, together with the decline of deforestation due to industrial and legal causes, resulted in the decrease of avalanches that affected settlements (mostly those released below the potential timberline). The decrease of damage has been sharper in the western sector of the Asturian Massif, where oak deforestation was very intense in the past and where lithology allows for a more successful ecological succession at present. Taking into account that reforestation can be observed in mountain environments of

  11. Characteristics of debris avalanche deposits inferred from source volume estimate and hummock morphology around Mt. Erciyes, central Turkey

    Directory of Open Access Journals (Sweden)

    Y. S. Hayakawa

    2018-02-01

    Full Text Available Debris avalanches caused by volcano sector collapse often form characteristic depositional landforms such as hummocks. Sedimentological and geomorphological analyses of debris avalanche deposits (DADs are crucial to clarify the size, mechanisms, and emplacement of debris avalanches. We describe the morphology of hummocks on the northeastern flank of Mt. Erciyes in Kayseri, central Turkey, likely formed in the late Pleistocene. Using a remotely piloted aircraft system (RPAS and the structure-from-motion and multi-view stereo (SfM–MVS photogrammetry, we obtained high-definition digital elevation model (DEM and orthorectified images of the hummocks to investigate their geometric features. We estimated the source volume of the DAD by reconstructing the topography of the volcano edifice using a satellite-based DEM. We examined the topographic cross sections based on the slopes around the scar regarded as remnant topography. Spatial distribution of hummocks is anomalously concentrated at a certain distance from the source, unlike those that follow the distance–size relationship. The high-definition land surface data by RPAS and SfM revealed that many of the hummocks are aligned toward the flow direction of the debris avalanche, suggesting that the extensional regime of the debris avalanche was dominant. However, some displaced hummocks were also found, indicating that the compressional regime of the flow contributed to the formation of hummocks. These indicate that the flow and emplacement of the avalanche were constrained by the topography. The existing caldera wall forced the initial eastward flow to move northward, and the north-side caldera wall forced the flow into the narrow and steepened outlet valley where the sliding debris underwent a compressional regime, and out into the unconfined terrain where the debris was most likely emplaced on an extensional regime. Also, the estimated volume of 12–15 × 108 m3 gives a mean thickness of

  12. Numerical modeling of debris avalanches at Nevado de Toluca (Mexico): implications for hazard evaluation and mapping

    Science.gov (United States)

    Grieco, F.; Capra, L.; Groppelli, G.; Norini, G.

    2007-05-01

    The present study concerns the numerical modeling of debris avalanches on the Nevado de Toluca Volcano (Mexico) using TITAN2D simulation software, and its application to create hazard maps. Nevado de Toluca is an andesitic to dacitic stratovolcano of Late Pliocene-Holocene age, located in central México near to the cities of Toluca and México City; its past activity has endangered an area with more than 25 million inhabitants today. The present work is based upon the data collected during extensive field work finalized to the realization of the geological map of Nevado de Toluca at 1:25,000 scale. The activity of the volcano has developed from 2.6 Ma until 10.5 ka with both effusive and explosive events; the Nevado de Toluca has presented long phases of inactivity characterized by erosion and emplacement of debris flow and debris avalanche deposits on its flanks. The largest epiclastic events in the history of the volcano are wide debris flows and debris avalanches, occurred between 1 Ma and 50 ka, during a prolonged hiatus in eruptive activity. Other minor events happened mainly during the most recent volcanic activity (less than 50 ka), characterized by magmatic and tectonic-induced instability of the summit dome complex. According to the most recent tectonic analysis, the active transtensive kinematics of the E-W Tenango Fault System had a strong influence on the preferential directions of the last three documented lateral collapses, which generated the Arroyo Grande and Zaguàn debris avalanche deposits towards E and Nopal debris avalanche deposit towards W. The analysis of the data collected during the field work permitted to create a detailed GIS database of the spatial and temporal distribution of debris avalanche deposits on the volcano. Flow models, that have been performed with the software TITAN2D, developed by GMFG at Buffalo, were entirely based upon the information stored in the geological database. The modeling software is built upon equations

  13. Setting best practice criteria for self-differencing avalanche photodiodes in quantum key distribution

    Science.gov (United States)

    Koehler-Sidki, Alexander; Dynes, James F.; Lucamarini, Marco; Roberts, George L.; Sharpe, Andrew W.; Savory, Seb J.; Yuan, Zhiliang; Shields, Andrew J.

    2017-10-01

    In recent years, the security of avalanche photodiodes as single photon detectors for quantum key distribution has been subjected to much scrutiny. The most prominent example of this surrounds the vulnerability of such devices to blinding under strong illumination. We focus on self-differencing avalanche photodiodes, single photon detectors that have demonstrated count rates exceeding 1 GCounts/s resulting in secure key rates over 1 MBit/s. These detectors use a passive electronic circuit to cancel any periodic signals thereby enhancing detection sensitivity. However this intrinsic feature can be exploited by adversaries to gain control of the devices using illumination of a moderate intensity. Through careful experimental examinations, we define here a set of criteria for these detectors to avoid such attacks.

  14. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

    Science.gov (United States)

    Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

    2018-04-01

    Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

  15. Avalanche fluctuations within the multigap resistive plate chamber

    International Nuclear Information System (INIS)

    Cerron Zeballos, E.; Crotty, I.; Lamas Valverde, J.; Veenhof, R.J.; Williams, M.C.S.; Zichichi, A.

    1996-01-01

    The multigap resistive plate chamber (MRPC) was originally designed to have improved time resolution (compared to the wide gap RPC), but also to keep the good high rate behaviour and ease of construction associated with the wide gap RPC. However in addition we observed a very long efficiency plateau, even at high rates. Here we consider fluctuations in avalanche growth, and show that the inherent ''averaging'' of these fluctuations can account for the enhanced performance of the multigap RPC. (orig.)

  16. Phosphorous–vacancy–oxygen defects in silicon

    KAUST Repository

    Wang, Hao

    2013-07-30

    Electronic structure calculations employing the hybrid functional approach are used to gain fundamental insight in the interaction of phosphorous with oxygen interstitials and vacancies in silicon. It recently has been proposed, based on a binding energy analysis, that phosphorous–vacancy–oxygen defects may form. In the present study we investigate the stability of this defect as a function of the Fermi energy for the possible charge states. Spin polarization is found to be essential for the charge neutral defect.

  17. Parameter changes in silicon IMPATT diodes for mm wavelength range exposed to gamma-radiation

    International Nuclear Information System (INIS)

    Shcherbina, L.V.; Torchinskaya, T.V.; Shcherbina, E.S.; Polupan, G.P.

    1999-01-01

    We investigated the p + -n-n + -silicon mesa-diodes fabricated using batch technique whose breakdown voltage was 19±1 V. The exposition of IMPATT diodes to 60 Co gamma-radiation was made in the 10 3 to 10 7 Gy dose range. When the gamma-irradiation dose was increased up to (5-8)*10 5 Gy, then the thermal-generation component of the reverse current was monotonously decreasing. The breakdown voltage remained the same during gamma-irradiation. It was shown experimentally that exposition of diodes to (5-8)*10 5 Gy doses of gamma-irradiation led to some drop of both the number of microplasmas in the avalanche breakdown region and the micro plasma noise level. 60 Co gamma-irradiation in the 10 3 -8*10 5 Gy dose range led also to the growth of the microwave output power P out . The decrease of the micro plasma number in the avalanche breakdown region and Pout growth may be explained if one assumes that gamma-irradiation in the 10 3 - 8*10 5 Gy dose range leads to 'healing' of structural defects in the semiconductor due to their interaction with the radiation-induced point defects. The gamma-irradiation dose increase over 8*10 5 Gy results in a storage of some radiation-induced defects in the IMPATT diode base and electrical parameters of diodes are degrading

  18. Propagation of avalanches in Mn12-acetate: magnetic deflagration.

    Science.gov (United States)

    Suzuki, Yoko; Sarachik, M P; Chudnovsky, E M; McHugh, S; Gonzalez-Rubio, R; Avraham, Nurit; Myasoedov, Y; Zeldov, E; Shtrikman, H; Chakov, N E; Christou, G

    2005-09-30

    Local time-resolved measurements of fast reversal of the magnetization of single crystals of Mn12-acetate indicate that the magnetization avalanche spreads as a narrow interface that propagates through the crystal at a constant velocity that is roughly 2 orders of magnitude smaller than the speed of sound. We argue that this phenomenon is closely analogous to the propagation of a flame front (deflagration) through a flammable chemical substance.

  19. Graphene oxide-Ag nanoparticles-pyramidal silicon hybrid system for homogeneous, long-term stable and sensitive SERS activity

    Science.gov (United States)

    Guo, Jia; Xu, Shicai; Liu, Xiaoyun; Li, Zhe; Hu, Litao; Li, Zhen; Chen, Peixi; Ma, Yong; Jiang, Shouzhen; Ning, Tingyin

    2017-02-01

    In our work, few layers graphene oxide (GO) were directly synthesized on Ag nanoparticles (AgNPs) by spin-coating method to fabricate a GO-AgNPs hybrid structure on a pyramidal silicon (PSi) substrate for surface-enhanced Raman scattering (SERS). The GO-AgNPs-PSi substrate showed excellent Raman enhancement effect, the minimum detected concentration for Rhodamine 6G (R6G) can reach 10-12 M, which is one order of magnitude lower than the AgNPs-PSi substrate and two order of magnitude lower than the GO-AgNPs-flat-Si substrate. The linear fit calibration curve with error bars is presented and the value of R2 of 612 and 773 cm-1 can reach 0.986 and 0.980, respectively. The excellent linear response between the Raman intensity and R6G concentrations prove that the prepared GO-AgNPs-PSi substrates can serve as good SERS substrate for molecule detection. The maximum deviations of SERS intensities from 20 positions of the GO-AgNPs-PSi substrate are less than 8%, revealing the high homogeneity of the SERS substrate. The excellent homogeneity of the enhanced Raman signals can be attributed to well-separated pyramid arrays of PSi, the uniform morphology of AgNPs and multi-functions of GO layer. Besides, the uniform GO film can effectively protect AgNPs from oxidation and endow the hybrid system a good stability and long lifetime. This GO-AgNPs-PSi substrate may provide a new way toward practical applications for the ultrasensitive and label-free SERS detection in areas of medicine, food safety and biotechnology.

  20. Optically controlled redshift switching effects in hybrid fishscale metamaterials

    Directory of Open Access Journals (Sweden)

    Yu Wang

    2018-05-01

    Full Text Available We numerically demonstrate optically controlled THz response in a hybrid fishscale metamaterial with embedded photoconductive silicon at oblique incidence of TE wave. The oblique incidence allows excitation of Fano-type trapped mode resonance in a 2-fold rotational symmetric metamaterial. The hybrid fishscale metamaterial exhibits an optically controlled redshift switching effect in the THz range. The switching effect is dominated by the conductivity of the silicon instead of mechanically adjusting angles of incidence. The tuning frequency range is up to 0.3THz with a large modulation depth and high transmission in the “ON” state. The fishscale metamaterial-based switching has been experimentally verified by its microwave counterpart integrated by variable resistors. Our work provides an alternative route to realize tunable Fano-type response in metamaterials and is of importance to active manipulation, sensing and switching of THz waves in practical applications.

  1. Projected changes of snow conditions and avalanche activity in a warming climate: the French Alps over the 2020-2050 and 2070-2100 periods

    Science.gov (United States)

    Castebrunet, H.; Eckert, N.; Giraud, G.; Durand, Y.; Morin, S.

    2014-09-01

    Projecting changes in snow cover due to climate warming is important for many societal issues, including the adaptation of avalanche risk mitigation strategies. Efficient modelling of future snow cover requires high resolution to properly resolve the topography. Here, we introduce results obtained through statistical downscaling techniques allowing simulations of future snowpack conditions including mechanical stability estimates for the mid and late 21st century in the French Alps under three climate change scenarios. Refined statistical descriptions of snowpack characteristics are provided in comparison to a 1960-1990 reference period, including latitudinal, altitudinal and seasonal gradients. These results are then used to feed a statistical model relating avalanche activity to snow and meteorological conditions, so as to produce the first projection on annual/seasonal timescales of future natural avalanche activity based on past observations. The resulting statistical indicators are fundamental for the mountain economy in terms of anticipation of changes. Whereas precipitation is expected to remain quite stationary, temperature increase interacting with topography will constrain the evolution of snow-related variables on all considered spatio-temporal scales and will, in particular, lead to a reduction of the dry snowpack and an increase of the wet snowpack. Overall, compared to the reference period, changes are strong for the end of the 21st century, but already significant for the mid century. Changes in winter are less important than in spring, but wet-snow conditions are projected to appear at high elevations earlier in the season. At the same altitude, the southern French Alps will not be significantly more affected than the northern French Alps, which means that the snowpack will be preserved for longer in the southern massifs which are higher on average. Regarding avalanche activity, a general decrease in mean (20-30%) and interannual variability is

  2. Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes

    International Nuclear Information System (INIS)

    Wang, Ling; Bao, Xichang; Zhang, Wenjing; Li, Chao; Yuan, Yonggang; Xu, Jintong; Zhang, Yan; Li, Xiangyang

    2009-01-01

    Dark current is critical for GaN-based avalanche photodiodes because it significantly increases the noise current and limits the multiplication factor. It has been found that the band-to-band tunneling current is the dominant origin of the dark current for avalanche photodiodes at the onset of breakdown voltage. Experimentally, for GaN-based avalanche photodiodes with a thinner intrinsic layer, the dark current increases nearly exponentially with the applied voltage even at a lower bias voltage. In this paper, the intrinsic layer (i-layer) width of GaN-based avalanche photodiodes has been varied to study its effect on the band-to-band tunneling current. A widely used equation was used to calculate the band-to-band tunneling current of avalanche photodiodes with different i-layer widths (i-layer 0.1 µm, 0.2 µm and 0.4 µm). At −40 V, the band-to-band tunneling current significantly reduces by a magnitude of 10 −15 A with an increase in the i-layer width from 0.1 µm to 0.2 µm, and a magnitude of 10 −29 A with an increase in the i-layer width from 0.2 µm to 0.4 µm. Then, GaN-based avalanche photodiodes (i-layer 0.1 µm, 0.2 µm and 0.4 µm) with different-sized mesa were fabricated. Also, the measurement of dark current of all three different structures was performed, and their multiplication factors were given

  3. Enhanced four-wave mixing in graphene-silicon slow-light photonic crystal waveguides

    International Nuclear Information System (INIS)

    Zhou, Hao; Gu, Tingyi; McMillan, James F.; Wong, Chee Wei; Petrone, Nicholas; Zande, Arend van der; Hone, James C.; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Feng, Guoying; Zhou, Shouhuan

    2014-01-01

    We demonstrate the enhanced four-wave mixing of monolayer graphene on slow-light silicon photonic crystal waveguides. 200-μm interaction length, a four-wave mixing conversion efficiency of −23 dB is achieved in the graphene-silicon slow-light hybrid, with an enhanced 3-dB conversion bandwidth of about 17 nm. Our measurements match well with nonlinear coupled-mode theory simulations based on the measured waveguide dispersion, and provide an effective way for all-optical signal processing in chip-scale integrated optics.

  4. The silicon shower maximum detector for the STIC

    International Nuclear Information System (INIS)

    Alvsvaag, S.J.; Maeland, O.A.; Klovning, A.

    1995-01-01

    The structure of a shashlik calorimeter allows the insertion of tracking detectors within the longitudinal sampling to improve the accuracy in the determination of the direction of the showering particle and the e/π separation ability. The new forward calorimeter of the DELPHI detector has been equipped with two planes of silicon pad detectors respectively after 4 and 7.4 radiation lengths. The novelty of these silicon detectors is that to cope with the shashlik readout fibers, they had to incorporate 1.4 mm holes every cm 2 . The detector consists of circular strips with a radial pitch of 1.7 mm and an angular granularity of 22.5 , read out by means of the MX4 preamplifier. The preamplifier is located at 35 cm from the silicon detector and the signal is carried by Kapton cables bonded to the detector. The matching to the MX4 input pitch of 44 μm was made by a specially developed fanin hybrid. (orig.)

  5. Lifetime of Bubble Rafts: Cooperativity and Avalanches

    Science.gov (United States)

    Ritacco, Hernán; Kiefer, Flavien; Langevin, Dominique

    2007-06-01

    We have studied the collapse of pseudo-bi-dimensional foams. These foams are made of uniformly sized soap bubbles packed in an hexagonal lattice sitting at the top of a liquid surface. The collapse process follows the sequence: (1) rupture of a first bubble, driven by thermal fluctuations and (2) a cascade of bursting bubbles. We present a simple numerical model which captures the main characteristics of the dynamics of foam collapse. We show that in a certain range of viscosities of the foaming solutions, the size distribution of the avalanches follows power laws as in self-organized criticality processes.

  6. Functionalization of silicon-doped single walled carbon nanotubes at the doping site: An ab initio study

    International Nuclear Information System (INIS)

    Song Chen; Xia Yueyuan; Zhao Mingwen; Liu Xiangdong; Li Feng; Huang Boda; Zhang Hongyu; Zhang Bingyun

    2006-01-01

    We performed ab initio calculations on the cytosine-functionalized silicon-doped single walled carbon nanotubes (SWNT). The results show that silicon substitutional doping to SWNT can dramatically change the atomic and electronic structures of the SWNT. And more importantly, it may provide an efficient pathway for further sidewall functionalization to synthesize more complicated SWNT based complex materials, for example, our previously proposed base-functionalized SWNTs, because the doping silicon atom can improve the reaction activity of the tube at the doping site due to its preference to form sp3 hybridization bonding

  7. Hybrid Percolation Transition in Cluster Merging Processes: Continuously Varying Exponents

    Science.gov (United States)

    Cho, Y. S.; Lee, J. S.; Herrmann, H. J.; Kahng, B.

    2016-01-01

    Consider growing a network, in which every new connection is made between two disconnected nodes. At least one node is chosen randomly from a subset consisting of g fraction of the entire population in the smallest clusters. Here we show that this simple strategy for improving connection exhibits a more unusual phase transition, namely a hybrid percolation transition exhibiting the properties of both first-order and second-order phase transitions. The cluster size distribution of finite clusters at a transition point exhibits power-law behavior with a continuously varying exponent τ in the range 2 power-law behavior of the avalanche size distribution arising in models with link-deleting processes in interdependent networks.

  8. Avalanche breakdown and the probabilistic nature of laser failure

    Energy Technology Data Exchange (ETDEWEB)

    Mitropol' skii, M M; Khote' enkov, V A; Khodakov, G S

    1976-01-01

    A study was made of the probabilistic aspects of the development of an electron avalanche arising under the influence of a powerful laser beam in a solid transparent dielectric. The distribution function of time and relative fluctuation of the number of electrons was found. The width of the probability function of failure was determined as a function of intensity. The relative dispersion of time of beginning of breakdown can also be determined. Its numerical value under identical conditions is +-7%. These results are similar to the experimentally defined dispersion from an earlier work. The data produced also show that, in spite of the clearly probabilistic nature of the development of an avalanche, the slight width of the distribution causes the use of the threshold criterion for rupture of transparent dielectrics by laser radiation to be practically correct. The dependence of I/sub 0/ on pulse length agrees with experimental data, whereas I/sub 0/ (V) is significantly weaker than the actually observed value. This disagreement can be explained by various imperfections in the structure of the crystals and by their contamination, the frequency of appearance of which, in the focal volume, is proportional to its size and which were not considered in the theoretical statements developed here.

  9. TH-CD-207B-07: Noise Modeling of Single Photon Avalanche Diode (SPAD) for Photon Counting CT Applications

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Z; Zheng, X; Deen, J; Peng, H [McMaster University, Hamilton, ON (Canada); Xing, L [Stanford University School of Medicine, Stanford, CA (United States)

    2016-06-15

    Purpose: Silicon photomultiplier (SiPM) has recently emerged as a promising photodetector for biomedical imaging applications. Due to its high multiplication gain (comparable to PMT), fast timing, low cost and compactness, it is considered a good candidate for photon counting CT. Dark noise is a limiting factor which impacts both energy resolution and detection dynamic range. Our goal is to develop a comprehensive model for noise sources for SiPM sensors. Methods: The physical parameters used in this work were based upon a test SPAD fabricated in 130nm CMOS process. The SPAD uses an n+/p-well junction, which is isolated from the p-substrate by a deep n-well junction. Inter-avalanche time measurement was used to record the time interval between two adjacent avalanche pulses. After collecting 1×106 counts, the histogram was obtained and multiple exponential fitting process was used to extract the lifetime associated with the traps within the bandgap. Results: At room temperature, the breakdown voltage of the SPAD is ∼11.4V and shows a temperature coefficient of 7.7mV/°C. The dark noise of SPAD increases with both the excess biasing voltage and temperature. The primary dark counts from the model were validated against the measurement results. A maximum relative error of 8.7% is observed at 20 °C with an excess voltage of 0.5V. The probabilities of after-pulsing are found to be dependent of both temperature and excess voltage. With 0.5V excess voltage, the after-pulsing probability is 63.5% at - 30 °C and drops to ∼6.6% at 40 °C. Conclusion: A comprehensive noise model for SPAD sensor was proposed. The model takes into account of static, dynamic and statistical behavior of SPADs. We believe that this is the first SPAD circuit simulation model that includes the band-to-band tunneling dark noise contribution and temporal dependence of the after-pulsing probability.

  10. Deactivation of group III acceptors in silicon during keV electron irradiation

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.; Pan, S.C.

    1983-01-01

    Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N/sub infinity/, with N/sub infinity/(B) Al--H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond

  11. Neural avalanches at the critical point between replay and non-replay of spatiotemporal patterns.

    Directory of Open Access Journals (Sweden)

    Silvia Scarpetta

    Full Text Available We model spontaneous cortical activity with a network of coupled spiking units, in which multiple spatio-temporal patterns are stored as dynamical attractors. We introduce an order parameter, which measures the overlap (similarity between the activity of the network and the stored patterns. We find that, depending on the excitability of the network, different working regimes are possible. For high excitability, the dynamical attractors are stable, and a collective activity that replays one of the stored patterns emerges spontaneously, while for low excitability, no replay is induced. Between these two regimes, there is a critical region in which the dynamical attractors are unstable, and intermittent short replays are induced by noise. At the critical spiking threshold, the order parameter goes from zero to one, and its fluctuations are maximized, as expected for a phase transition (and as observed in recent experimental results in the brain. Notably, in this critical region, the avalanche size and duration distributions follow power laws. Critical exponents are consistent with a scaling relationship observed recently in neural avalanches measurements. In conclusion, our simple model suggests that avalanche power laws in cortical spontaneous activity may be the effect of a network at the critical point between the replay and non-replay of spatio-temporal patterns.

  12. Thermo-mechanical characterization of siliconized E-glass fiber/hematite particles reinforced epoxy resin hybrid composite

    Energy Technology Data Exchange (ETDEWEB)

    Arun Prakash, V.R., E-mail: vinprakash101@gmail.com; Rajadurai, A., E-mail: rajadurai@annauniv.edu.in

    2016-10-30

    Highlights: • Particles dimension have reduced using Ball milling process. • Importance of surface modification was explored. • Surface modification has been done to improve adhesion of fiber/particles with epoxy. • Mechanical properties has been increased by adding modified fiber and particles. • Thermal properties have been increased. - Abstract: In this present work hybrid polymer (epoxy) matrix composite has been strengthened with surface modified E-glass fiber and iron(III) oxide particles with varying size. The particle sizes of 200 nm and <100 nm has been prepared by high energy ball milling and sol-gel methods respectively. To enhance better dispersion of particles and improve adhesion of fibers and fillers with epoxy matrix surface modification process has been done on both fiber and filler by an amino functional silane 3-Aminopropyltrimethoxysilane (APTMS). Crystalline and functional groups of siliconized iron(III) oxide particles were characterized by XRD and FTIR spectroscopy analysis. Fixed quantity of surface treated 15 vol% E-glass fiber was laid along with 0.5 and 1.0 vol% of iron(III) oxide particles into the matrix to fabricate hybrid composites. The composites were cured by an aliphatic hardener Triethylenetetramine (TETA). Effectiveness of surface modified particles and fibers addition into the resin matrix were revealed by mechanical testing like tensile testing, flexural testing, impact testing, inter laminar shear strength and hardness. Thermal behavior of composites was evaluated by TGA, DSC and thermal conductivity (Lee’s disc). The scanning electron microscopy was employed to found shape and size of iron(III) oxide particles adhesion quality of fiber with epoxy matrix. Good dispersion of fillers in matrix was achieved with surface modifier APTMS. Tensile, flexural, impact and inter laminar shear strength of composites was improved by reinforcing surface modified fiber and filler. Thermal stability of epoxy resin was improved

  13. Intrinsic Bistability and Critical Slowing in Tm3+/Yb3+ Codoped Laser Crystal with the Photon Avalanche Mechanism

    International Nuclear Information System (INIS)

    Li, Li; Li-Xue, Chen; Xin-Lu, Zhang

    2009-01-01

    We present theoretically a novel intrinsic optical bistability (IOB) in the Tm 3+ /Yb 3+ codoped system with a photon avalanche mechanism. Numerical simulations based on the rate equation model demonstrate distinct IOB hysteresis and critical slowing dynamics around the avalanche thresholds. Such an IOB characteristic in Tm 3+ /Yb 3+ codoped crystal has potential applications in solid-state bistable optical displays and luminescence switchers in visible-infrared spectra. (fundamental areas of phenomenology (including applications))

  14. Optical micro-cavities on silicon

    Science.gov (United States)

    Dai, Daoxin; Liu, Erhu; Tan, Ying

    2018-01-01

    Silicon-based optical microcavities are very popular for many applications because of the ultra-compact footprint, easy scalability, and functional versatility. In this paper we give a discussion about the challenges of the optical microcavities on silicon and also give a review of our recent work, including the following parts. First, a near-"perfect" high-order MRR optical filter with a box-like filtering response is realized by introducing bent directional couplers to have sufficient coupling between the access waveguide and the microrings. Second, an efficient thermally-tunable MRR-based optical filter with graphene transparent nano-heater is realized by introducing transparent graphene nanoheaters. Thirdly, a polarization-selective microring-based optical filter is realized to work with resonances for only one of TE and TM polarizations for the first time. Finally, a on-chip reconfigurable optical add-drop multiplexer for hybrid mode- /wavelength-division-multiplexing systems is realized for the first time by monolithically integrating a mode demultiplexer, four MRR optical switches, and a mode multiplexer.

  15. A microstrip gas avalanche chamber with two-dimensional readout

    International Nuclear Information System (INIS)

    Angelini, F.; Bellazzini, R.; Brez, A.; Massai, M.M.; Spandre, G.; Torquati, M.R.

    1989-01-01

    A microstrip gas avalanche chamber with a 200 μm anode pitch has been built and successfully tested in our laboratory. A gas gain of 10 4 and an energy resolution of 18% (FWHM) at 6 keV have been measured using a gas mixture of argon-CO 2 at atmospheric pressure. A preliminary measurement of the positional sensitivity indicates that a spatial resolution of 50 μm can be obtained. (orig.)

  16. Real-time transmission electron microscope observation of gold nanoclusters diffusing into silicon at room temperature

    International Nuclear Information System (INIS)

    Ishida, Tadashi; Nakajima, Yuuki; Fujita, Hiroyuki; Endo, Junji; Collard, Dominique

    2009-01-01

    Gold diffusion into silicon at room temperature was observed in real time with atomic resolution. Gold nanoclusters were formed on a silicon surface by an electrical discharge between a silicon tip and a gold coated tip inside an ultrahigh-vacuum transmission electron microscope (TEM) specimen chamber. At the moment of the gold nanocluster deposition, the gold nanoclusters had a crystalline structure. The crystalline structure gradually disappeared due to the interdiffusion between silicon and gold as observed after the deposition of gold nanoclusters. The shape of the nanocluster gradually changed due to the gold diffusion into the damaged silicon. The diffusion front between silicon and gold moved toward the silicon side. From the observations of the diffusion front, the gold diffusivity at room temperature was extracted. The extracted activation energy, 0.21 eV, matched the activation energy in bulk diffusion between damaged silicon and gold. This information is useful for optimizing the hybridization between solid-state and biological nanodevices in which gold is used as an adhesive layer between the two devices.

  17. Thermodynamics of the Heat-Flux Avalanches at the First-Order Magnetic Transition in Magnetocaloric Materials

    Science.gov (United States)

    Piazzi, Marco; Bennati, Cecilia; Basso, Vittorio

    2017-10-01

    We investigate the kinetics of first-order magnetic phase transitions by measuring and modeling the heat-flux avalanches corresponding to the irreversible motion of the phase-boundary interface separating the coexisting low- and high-temperature stable magnetic phases. By means of out-of-equilibrium thermodynamics, we encompass the damping mechanisms of the boundary motion in a phenomenological parameter αs. By analyzing the time behavior of the heat-flux signals measured on La (Fe -Mn -Si )13-H magnetocaloric compounds through Peltier calorimetry temperature scans performed at low rates, we relate the linear rise of the individual avalanches to the intrinsic-damping parameter αs.

  18. Room temperature NO2 gas sensing of Au-loaded tungsten oxide nanowires/porous silicon hybrid structure

    International Nuclear Information System (INIS)

    Wang Deng-Feng; Liang Ji-Ran; Li Chang-Qing; Yan Wen-Jun; Hu Ming

    2016-01-01

    In this work, we report an enhanced nitrogen dioxide (NO 2 ) gas sensor based on tungsten oxide (WO 3 ) nanowires/porous silicon (PS) decorated with gold (Au) nanoparticles. Au-loaded WO 3 nanowires with diameters of 10 nm–25 nm and lengths of 300 nm–500 nm are fabricated by the sputtering method on a porous silicon substrate. The high-resolution transmission electron microscopy (HRTEM) micrographs show that Au nanoparticles are uniformly distributed on the surfaces of WO 3 nanowires. The effect of the Au nanoparticles on the NO 2 -sensing performance of WO 3 nanowires/porous silicon is investigated over a low concentration range of 0.2 ppm–5 ppm of NO 2 at room temperature (25 °C). It is found that the 10-Å Au-loaded WO 3 nanowires/porous silicon-based sensor possesses the highest gas response characteristic. The underlying mechanism of the enhanced sensing properties of the Au-loaded WO 3 nanowires/porous silicon is also discussed. (paper)

  19. Vortex Avalanches with Periodic Arrays of Pinning Sites

    Science.gov (United States)

    Abbas, J.; Heckel, T.; Kakalios, J.

    2001-03-01

    Numerical simulations by Nori and co-workers of dynamical phase transitions for magnetic vortices in type II superconductors when the defects which act as pinning sites are arranged in a periodic array have found a dramatic non-linear relationship between vortex voltage and driving current.2,4 In order to experimentally test the predictions of these simulations, a macroscopic physical analog of an array of flux vortices in the presense of an ordered lattice of pinning sites has been constructed. This simple table-top experimental system consists of conventional household magnets, arranged in an ordered grid (serving as the lattice of fixed pinning centers). A plexiglass sheet is positioned above these fixed magnets, and another collection of magnets (representing the magnetic flux vortices), oriented so that they are attracted to the fixed magnets are placed on top of the sheet. The entire apparatus is then tilted to a given angle (the analog of the driving voltage) and the velocity of the avalanching magnets is recorded using the induced voltage in a pick-up coil. By varying the ratio of movable magnets to fixed pinning magnets, the filling fraction can be adjusted, as can the pinning strength, by adjusting the separation of the plexiglass sheet between the fixed and movable magnets. The velocity of the avalanching magnets as the filling fraction is varied displays a jamming transition, with a non-trivial dependence on the pinning strength of the lattice of fixed magnets below the sheet.

  20. Space charge limited avalanche growth in multigap resistive plate chambers

    International Nuclear Information System (INIS)

    Akindinov, A.N.; Kaidalov, A.B.; Kisselev, S.M.; Alici, A.; Basile, M.; Cifarelli, L.; Anselmo, F.; Antonioli, P.; Romeo, G. Cara; Cindolo, F.; Baek, Y.; Kim, D.H.; Cosenza, F.; Caro, A. De; Pasquale, S. De; Bartolomeo, A. Di; Girard, M. Fusco; Guida, M.; Hatzifotiadou, D.; Kim, D.W.; Laurenti, G.; Lee, K.; Lee, S.C.; Lioublev, E.; Luvisetto, M.L.; Margotti, A.; Martemiyanov, A.N.; Nania, R.; Noferini, F.; Otiougova, P.; Pierella, F.; Polozov, P.A.; Scapparone, E.; Scioli, G.; Sellitto, S.B.; Smirnitski, A.V.; Tchoumakov, M.M.; Valenti, G.; Vicinanza, D.; Voloshin, K.G.; Williams, M.C.S.; Zagreev, B.V.; Zampolli, C.; Zichichi, A.

    2004-01-01

    Abstract The ALICE TOF array will be built using the Multigap Resistive Plate Chamber(MRPC) configured as a double stack. Each stack contains 5 gas gaps with width of 250 μm. There has been an intense R and D effort to optimise this new detector to withstand the problems connected with the high level of radiation at the LHC. One clear outcome of the R and D is that the growth of the gas avalanche is strongly affected by space charge. The effect of the space charge is a decrease in the rate of change in gain with electric field; this allows more stable operation of this detector. We have measured the gain as a function of the electric field and also measured the ratio of the fast charge to the total charge produced in the gas gap. It is well established that RPCs built with 250 μm gas gap have a much superior performance than 2 mm gaps; we discuss and compare the performance of 250 μm gap MRPCs with 2 mm gap RPCs to show the importance of space-charge limitation of avalanche growth. (orig.)