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Sample records for hybrid silicon avalanche

  1. Silicon Geiger mode avalanche photodiodes

    Institute of Scientific and Technical Information of China (English)

    M. Mazzillo; S. Billotta; G. Bonanno; A. Campisi; L. Cosentino; P. Finocchiaro; F. Musumeci; S.Privitera; S. Tudisco; G. Condorelli; D. Sanfilippo; G. Fallica; E. Sciacca; S. Aurite; S. Lombardo; E. Rlmini; M. Belluso

    2007-01-01

    In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes (GMAP) fabricated by silicon standard planar technology. Low dark count rates, negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields, as telecommunications and nuclear medical imaging.

  2. Precise method for determining avalanche breakdown voltage of silicon photomultipliers

    Science.gov (United States)

    Chirikov-Zorin, I.

    2017-07-01

    A physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDErel) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDErel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts.

  3. Photon counting techniques with silicon avalanche photodiodes.

    Science.gov (United States)

    Dautet, H; Deschamps, P; Dion, B; Macgregor, A D; Macsween, D; McIntyre, R J; Trottier, C; Webb, P P

    1993-07-20

    The properties of avalanche photodiodes and associated electronics required for photon counting in the Geiger and the sub-Geiger modes are reviewed. When the Geiger mode is used, there are significant improvements reported in overall photon detection efficiencies (approaching 70% at 633 nm), and a timing jitter (under 200 ps) is achieved with passive quenching at high overvoltages (20-30 V). The results obtained by using an active-mode fast quench circuit capable of switching overvoltages as high as 15 V (giving photon detection efficiencies in the 50% range) with a dead time of less than 50 ns are reported. Larger diodes (up to 1 mm in diameter) that are usable in the Geiger mode and that have quantum efficiencies over 80% in the 500-800-nm range are also reported.

  4. Silicon avalanche photodiodes for direct detection of X-rays.

    Science.gov (United States)

    Baron, Alfred Q R; Kishimoto, Shunji; Morse, John; Rigal, Jean Marie

    2006-03-01

    Silicon avalanche photodiodes (APDs) are discussed as fast X-ray detectors for synchrotron radiation. The emphasis is on ;direct' detection, where the X-ray is absorbed within the silicon APD itself, and, therefore, on use with medium-energy X-rays, <30 keV. The impact of APD structure on device performance is examined, and representative data from many different commercial devices are presented. Specific areas discussed include signal shapes, high-rate behavior, time resolution and pulse-height response. Data from several APD arrays are also presented, as is a detailed description of an integrated package system. Tables are included comparing commercially available devices, including arrays.

  5. 10 Gbps silicon waveguide-integrated infrared avalanche photodiode.

    Science.gov (United States)

    Ackert, Jason J; Karar, Abdullah S; Paez, Dixon J; Jessop, Paul E; Cartledge, John C; Knights, Andrew P

    2013-08-26

    We have fabricated monolithic silicon avalanche photodiodes capable of 10 Gbps operation at a wavelength of 1550 nm. The photodiodes are entirely CMOS process compatible and comprise a p-i-n junction integrated with a silicon-on-insulator (SOI) rib waveguide. Photo-generation is initiated via the presence of deep levels in the silicon bandgap, introduced by ion implantation and modified by subsequent annealing. The devices show a small signal 3 dB bandwidth of 2.0 GHz as well as an open eye pattern at 10 Gbps. A responsivity of 4.7 ± 0.5 A/W is measured for a 600 µm device at a reverse bias of 40 V.

  6. Silicon avalanche photodiode operation and lifetime analysis for small satellites.

    Science.gov (United States)

    Tan, Yue Chuan; Chandrasekara, Rakhitha; Cheng, Cliff; Ling, Alexander

    2013-07-15

    Silicon avalanche photodiodes (APDs) are sensitive to operating temperature fluctuations and are also susceptible to radiation flux expected in satellite-based quantum experiments. We introduce a low power voltage adjusting mechanism to overcome the effects of in-orbit temperature fluctuations. We also present data on the performance of Si APDs after irradiation (γ-ray and proton beam). Combined with an analysis of expected orbital irradiation, we propose that a Si APD in a 400 km equatorial orbit may operate beyond the lifetime of the satellite.

  7. Silicon avalanche photodiode operation and lifetime analysis for small satellites

    CERN Document Server

    Tan, Yue Chuan; Cheng, Cliff; Ling, Alexander

    2013-01-01

    Silicon avalanche photodiodes (APDs) are sensitive to operating temperature fluctuations and are also susceptible to radiation flux expected in satellite-based quantum experiments. We introduce a low power voltage adjusting mechanism to overcome the effects of in-orbit temperature fluctuations. We also present data on the performance of Si APDs after irradiation (gamma-ray and proton beam). Combined with an analysis of expected orbital irradiation, we propose that a Si APD in a 400 km equatorial orbit may operate beyond the lifetime of the satellite.

  8. Hybrid phase transition into an absorbing state: Percolation and avalanches.

    Science.gov (United States)

    Lee, Deokjae; Choi, S; Stippinger, M; Kertész, J; Kahng, B

    2016-04-01

    Interdependent networks are more fragile under random attacks than simplex networks, because interlayer dependencies lead to cascading failures and finally to a sudden collapse. This is a hybrid phase transition (HPT), meaning that at the transition point the order parameter has a jump but there are also critical phenomena related to it. Here we study these phenomena on the Erdős-Rényi and the two-dimensional interdependent networks and show that the hybrid percolation transition exhibits two kinds of critical behaviors: divergence of the fluctuations of the order parameter and power-law size distribution of finite avalanches at a transition point. At the transition point global or "infinite" avalanches occur, while the finite ones have a power law size distribution; thus the avalanche statistics also has the nature of a HPT. The exponent β_{m} of the order parameter is 1/2 under general conditions, while the value of the exponent γ_{m} characterizing the fluctuations of the order parameter depends on the system. The critical behavior of the finite avalanches can be described by another set of exponents, β_{a} and γ_{a}. These two critical behaviors are coupled by a scaling law: 1-β_{m}=γ_{a}.

  9. Silicon Avalanche Pixel Sensor for High Precision Tracking

    CERN Document Server

    D'Ascenzo, N; Moon, C S; Morsani, F; Ratti, L; Saveliev, V; Navarro, A Savoy; Xie, Q

    2013-01-01

    The development of an innovative position sensitive pixelated sensor to detect and measure with high precision the coordinates of the ionizing particles is proposed. The silicon avalanche pixel sensors (APiX) is based on the vertical integration of avalanche pixels connected in pairs and operated in coincidence in fully digital mode and with the processing electronics embedded on the chip. The APiX sensor addresses the need to minimize the material budget and related multiple scattering effects in tracking systems requiring a high spatial resolution in the presence of a large occupancy. The expected operation of the new sensor features: low noise, low power consumption and suitable radiation tolerance. The APiX device provides on-chip digital information on the position of the coordinate of the impinging charged particle and can be seen as the building block of a modular system of pixelated arrays, implementing a sparsified readout. The technological challenges are the 3D integration of the device under CMOS ...

  10. Photon-counting techniques with silicon avalanche photodiodes

    Science.gov (United States)

    Dautet, Henri; Deschamps, P.; Dion, Bruno; MacGregor, Andrew D.; MacSween, D.; McIntyre, Robert J.; Trottier, C.; Webb, Paul P.

    1993-05-01

    Silicon avalanche photodiodes (APD) have been used for photon counting for a number of years. This paper reviews their properties and the associated electronics required for photon counting in the Geiger mode. Significant improvements are reported in overall photon detection efficiencies (approaching 75% at 633 nm), and timing jitter (under 200 ps) achieved at high over-voltages (20 - 30 V). Results obtained using an active-mode fast quench circuit capable of switching over-voltages as high as 20 V (giving photon detection efficiencies in the 50% range), are reported with a dead-time of less than 50 ns. Larger diodes (up to 1 mm diameter), usable in the Geiger mode, which have quantum efficiencies over 80% in the 500 - 800 nm range also are reported.

  11. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    CERN Document Server

    Wegrzecka, I

    1999-01-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  12. Characterization of silicon avalanche photodiodes for photon correlation measurements. 2: Active quenching.

    Science.gov (United States)

    Brown, R G; Jones, R; Rarity, J G; Ridley, K D

    1987-06-15

    We continue examination of the photon correlation properties of silicon avalanche photodiodes operated in photon-counting mode by extending their operation from that of passive quenching(1) to active quenching, yielding shorter dead time and higher frequency operation.

  13. Avalanche dynamics in silicon avalanche single- and few-photon sensitive photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Blazej, J; Prochazka, I, E-mail: blazej@fjfi.cvut.c [Czech Technical University in Prague, Brehova 7, 115 19 Prague 1 (Czech Republic)

    2009-11-15

    We are presenting the results of the study of the Single Photon Avalanche Diode (SPAD) avalanche pulse response rise-time and its dependence on several key parameters. We were investigating the unique properties of K14 type SPAD with its high delay uniformity of 200 {mu}m active area, the character of avalanche, and the correlation between the avalanche build-up time and the photon number involved in the avalanche trigger. The detection chip was operated with bias higher then breakdown voltage, ie. in Geiger mode. The detection chip was operated in a passive quenching circuit with active gating. This set-up enabled us to monitor both the diode reverse current using an electrometer and a fast digitizing oscilloscope. The electrometer reading enabled to estimate the photon number per detection event, the avalanche build up was recorded on the oscilloscope and processed by custom designed waveform analysis package. The correlation of avalanche build up to the photon number, bias above break, photon absorption location, optical pulse length and photon energy was investigated in detail. The experimental results are presented.

  14. Numerical analysis of the temperature field in silicon avalanche photodiode by millisecond laser irradiation

    Science.gov (United States)

    Wang, Di; Jin, Guangyong; Wei, Zhi; Zhao, Hongyu

    2016-10-01

    Recent years, millisecond laser become a research hotspot. Avalanche photodiode (APD) based on silicon structure has excellent characteristics such as low noise and high-sensitivity. It is key components in receives for long-haul high-bit-rate optical communication system. The failure mechanism of silicon APD remains quite unknown, although some silicon p-i-n photodiode failure modes have been speculated. The COMSOL Multiphysics finite element analysis software was utilized in this paper. And the 2D model, which based on heat conduction equation, was established to simulate the temperature field of the silicon avalanche photodiode irradiated by millisecond laser. The model presented in the following section is a work which considers only melting of silicon by a millisecond laser pulse. The temperature dependences of material properties are taken into account, which has a great influence on the temperature fields indicated by the numerical results. The pulsed laser-induced transient temperature fields in silicon avalanche photodiode are obtained, which will be useful in the research on the mechanism of interactions between millisecond laser and photodiode. The evolution of temperature at the central point of the top surface, the temperature distribution along the radial direction in the end of laser irradiation and the temperature distribution along the axial direction in the end of laser irradiation were considered. Meanwhile, the fluence threshold value was obtained through the model. The conclusions had a reference value for revealing the mechanism of interactions between millisecond laser and the silicon avalanche photodiode.

  15. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  16. Wavelength dependence of silicon avalanche photodiode fabricated by CMOS process

    Science.gov (United States)

    Mohammed Napiah, Zul Atfyi Fauzan; Hishiki, Takuya; Iiyama, Koichi

    2017-07-01

    Avalanche photodiodes fabricated by CMOS process (CMOS-APDs) have features of high avalanche gain below 10 V, wide bandwidth over 5 GHz, and easy integration with electronic circuits. In CMOS-APDs, guard ring structure is introduced for high-speed operation by canceling photo-generated carriers in the substrate at the sacrifice of the responsivity. We describe here wavelength dependence of the responsivity and the bandwidth of the CMOS-APDs with shorted and opened guard ring structure.

  17. Avalanche-enhanced photocurrents in pin silicon waveguides at 1550 nm wavelength

    Institute of Scientific and Technical Information of China (English)

    Zhao Yong; Xu Chao; Jiang Xiaoqing; Ge Huiliang

    2013-01-01

    The photocurrent effect in pin silicon waveguides at 1550 nm wavelength is experimentally investigated.The photocurrent is mainly attributed to surface-state absorption,defect-state absorption and/or two-photon absorption.Experimental results show that the photocurrent is enhanced by the avalanche effect.A pin silicon waveguide with an intrinsic region width of 3.4 μm and a length of 2000 μm achieves a responsivity of 4.6 mA/W and an avalanche multiplication factor of about five.

  18. Hybrid silicon evanescent devices

    Directory of Open Access Journals (Sweden)

    Alexander W. Fang

    2007-07-01

    Full Text Available Si photonics as an integration platform has recently been a focus of optoelectronics research because of the promise of low-cost manufacturing based on the ubiquitous electronics fabrication infrastructure. The key challenge for Si photonic systems is the realization of compact, electrically driven optical gain elements. We review our recent developments in hybrid Si evanescent devices. We have demonstrated electrically pumped lasers, amplifiers, and photodetectors that can provide a low-cost, scalable solution for hybrid integration on a Si platform by using a novel hybrid waveguide architecture, consisting of III-V quantum wells bonded to Si waveguides.

  19. Characterization of silicon avalanche photodiodes for photon correlation measurements. 3: Sub-Geiger operation.

    Science.gov (United States)

    Brown, R G; Daniels, M

    1989-11-01

    We continue examination of the photon correlation properties of silicon avalanche photodiodes operated in the single-photon counting mode by extending their operation from that of passive [Appl. Opt. 25, 4122-4126 (1986)] and active [Appl. Opt. 26, 2383-2389 (1987)] quenching to the sub-Geiger mode, with potential for high quantum efficiency and very low afterpulsing.

  20. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    CERN Document Server

    Saveliev, V

    2000-01-01

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  1. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    Energy Technology Data Exchange (ETDEWEB)

    Saveliev, V. E-mail: saveliev@mail.desy.de; Golovin, V

    2000-03-11

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10{sup 5}-10{sup 6}) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  2. Photon counting modules using RCA silicon avalanche photodiodes

    Science.gov (United States)

    Lightstone, Alexander W.; Macgregor, Andrew D.; Macsween, Darlene E.; Mcintyre, Robert J.; Trottier, Claude; Webb, Paul P.

    1989-01-01

    Avalanche photodiodes (APD) are excellent small area, solid state detectors for photon counting. Performance possibilities include: photon detection efficiency in excess of 50 percent; wavelength response from 400 to 1000 nm; count rate to 10 (exp 7) counts per sec; afterpulsing at negligible levels; timing resolution better than 1 ns. Unfortunately, these performance levels are not simultaneously available in a single detector amplifier configuration. By considering theoretical performance predictions and previous and new measurements of APD performance, the anticipated performance of a range of proposed APD-based photon counting modules is derived.

  3. Multipixel silicon avalanche photodiode with ultralow dark count rate at liquid nitrogen temperature.

    Science.gov (United States)

    Akiba, M; Tsujino, K; Sato, K; Sasaki, M

    2009-09-14

    Multipixel silicon avalanche photodiodes (Si APDs) are novel photodetectors used as silicon photomultipliers (SiPMs), or multipixel photon counter (MPPC), because they have fast response, photon-number resolution, and a high count rate; one drawback, however, is the high dark count rate. We developed a system for cooling an MPPC to liquid nitrogen temperature and thus reduce the dark count rate. Our system achieved dark count rates of <0.2 cps. Here we present the afterpulse probability, counting capability, timing jitter, and photon-number resolution of our system at 78.5 K and 295 K.

  4. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  5. Hybrid silicon evanescent approach to optical interconnects

    OpenAIRE

    Liang, Di; Fang, Alexander W.; Chen, Hui-Wen; Sysak, Matthew N; Koch, Brian R.; Lively, Erica; Raday, Omri; Kuo, Ying-hao; Jones, Richard; Bowers, John E

    2009-01-01

    We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III–V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication...

  6. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    Science.gov (United States)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  7. The performance of photon counting imaging with a Geiger mode silicon avalanche photodiode

    Science.gov (United States)

    Qu, Hui-Ming; Zhang, Yi-Fan; Ji, Zhong-Jie; Chen, Qian

    2013-10-01

    In principle, photon counting imaging can detect a photon. With the development of low-level-light image intensifier techniques and low-level-light detection devices, photon counting imaging can now detect photon images under extremely low illumination. Based on a Geiger mode silicon avalanche photodiode single photon counter, an experimental system for photon counting imaging was built through two-dimensional scanning of a SPAD (single photon avalanche diode) detector. The feasibility of the imaging platform was validated experimentally. Two images with different characteristics, namely, the USAF 1951 resolution test panel and the image of Lena, were chosen to evaluate the imaging performance of the experimental system. The results were compared and analysed. The imaging properties under various illumination and scanning steps were studied. The lowest illumination limit of the SPAD photon counting imaging was determined.

  8. Design and realization of a facility for the characterization of Silicon Avalanche PhotoDiodes

    CERN Document Server

    Celentano, Andrea; De Vita, Raffaella; Fegan, Stuart; Mini, Giuseppe; Nobili, Gianni; Ottonello, Giacomo; Parodi, Franco; Rizzo, Alessandro; Zonta, Irene

    2015-01-01

    We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between -2 $^\\circ$C and 25 $^\\circ$C. The system can simultaneously measure up to 24 photo-detectors, in a completely automatic way, within one day of operations. The measured data for each sensor are: the internal gain as a function of the bias voltage and temperature, the gain variation with respect to the bias voltage, and the dark current as a function of the gain. The systematic uncertainties have been evaluated during the commissioning of the system to be of the order of 1%. This paper describes in detail the facility design and layout, and the procedure employed to characterize the sensors. The results obtained from the measurement of the 380 Avalanche Photodiodes of the CLAS12-Forward Tagger calorimeter detector are then reported, as the first example of the massive usage of the facility.

  9. Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

    Science.gov (United States)

    Thomas, O; Yuan, Z L; Shields, A J

    2012-01-24

    Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

  10. DNA hybridization on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Shalini, E-mail: shalinsin@gmail.co [Electronic Materials Division, National Physical Laboratory (CSIR), Dr. K. S. Krishnan Marg, New Delhi-110012 (India); Faculty of Life Science, Aligarh Muslim University, Aligarh-202001 (India); Zack, Jyoti [Dr. B.R Ambedkar Center for Biomedical Research, University of Delhi, Delhi-110007 (India); Kumar, Dinesh; Srivastava, S.K.; Govind [Electronic Materials Division, National Physical Laboratory (CSIR), Dr. K. S. Krishnan Marg, New Delhi-110012 (India); Saluja, Daman [Dr. B.R Ambedkar Center for Biomedical Research, University of Delhi, Delhi-110007 (India); Khan, M.A. [Faculty of Life Science, Aligarh Muslim University, Aligarh-202001 (India); Singh, P.K. [Electronic Materials Division, National Physical Laboratory (CSIR), Dr. K. S. Krishnan Marg, New Delhi-110012 (India)

    2010-11-30

    Nanowire-based detection strategies provide promising new routes to bioanalysis and indeed are attractive to conventional systems because of their small size, high surface-to-volume ratios, electronic, and optical properties. A sequence-specific detection of single-stranded oligonucleotides using silicon nanowires (SiNWs) is demonstrated. The surface of the SiNWs is functionalized with densely packed organic monolayer via hydrosilylation for covalent attachment. Subsequently, deoxyribonucleic acid (DNA) is immobilized to recognize the complementary target DNA. The biomolecular recognition properties of the nanowires are tested via hybridization with {sup {gamma}P32} tagged complementary and non-complementary DNA oligonucleotides, showing good selectivity and reversibility. No significant non-specific binding to the incorrect sequences is observed. X-ray photoelectron spectroscopy, fluorescence imaging, and nanodrop techniques are used to characterize the modified SiNWs and covalent attachment with DNA. The results show that SiNWs are excellent substrates for the absorption, stabilization and detection of DNA sequences and could be used for DNA microarrays and micro fabricated SiNWs DNA sensors.

  11. High-efficiency and low-jitter Silicon single-photon avalanche diodes based on nanophotonic absorption enhancement

    CERN Document Server

    Ma, Jian; Yu, Zongfu; Jiang, Xiao; Huo, Yijie; Zang, Kai; Zhang, Jun; Harris, James S; Jin, Ge; Zhang, Qiang; Pan, Jian-Wei

    2015-01-01

    Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device fabrication for current silicon SPADs, the key parameters of detection befficiency and timing jitter are often forced to compromise. Here, we propose a nanostructured silicon SPAD, which achieves high detection efficiency with excellent timing jitter simultaneously over a broad spectral range. The optical and electric simulations show significant performance enhancement compared with conventional silicon SPAD devices. This nanostructured devices can be easily fabricated and thus well suited for practical applications.

  12. Towards stable silicon nanoarray hybrid solar cells.

    Science.gov (United States)

    He, W W; Wu, K J; Wang, K; Shi, T F; Wu, L; Li, S X; Teng, D Y; Ye, C H

    2014-01-16

    Silicon nanoarray hybrid solar cells benefit from the ease of fabrication and the cost-effectiveness of the hybrid structure, and represent a new research focus towards the utilization of solar energy. However, hybrid solar cells composed of both inorganic and organic components suffer from the notorious stability issue, which has to be tackled before the hybrid solar cells could become a viable alternative for harvesting solar energy. Here we show that Si nanoarray/PEDOT:PSS hybrid solar cells with improved stability can be fabricated via eliminating the water inclusion in the initial formation of the heterojunction between Si nanoarray and PEDOT:PSS. The Si nanoarray hybrid solar cells are stable against rapid degradation in the atmosphere environment for several months without encapsulation. This finding paves the way towards the real-world applications of Si nanoarray hybrid solar cells.

  13. Numerical Examination of Silicon Avalanche Photodiodes Operated in Charge Storage Mode

    Science.gov (United States)

    Parks, Joseph W., Jr.; Brennan, Kevin F.

    1998-01-01

    The behavior of silicon-based avalanche photodiodes (APD's) operated in the charge storage mode is examined. In the charge storage mode, the diodes are periodically biased to a sub-breakdown voltage and then open-circuited. During this integration period, photo-excited and thermally generated carriers are accumulated within the structure. The dynamics of this accumulation and its effects upon the avalanching of the diode warrants a detailed, fully numerical analysis. The salient features of this investigation include device sensitivity to the input photo-current including the self-quenching effect of the diode and its limitations in sensing low light levels, the dependence of the response on the bulk lifetime and hence on the generation current within the device, the initial gain, transient response, dependence of the device uniformity upon performance, and the quantity of storable charge within the device. To achieve these tasks our device simulator, STEBS-2D, was utilized. A modified current-controlled boundary condition is employed which allows for the simulation of the isolated diode after the initial reset bias has been applied. With this boundary condition, it is possible to establish a steady-state voltage on the ohmic contact and then effectively remove the device from the external circuit while still including effects from surface recombination, trapped surface charge, and leakage current from the read-out electronics.

  14. A view on progress of silicon single-photon avalanche diodes and quenching circuits

    Science.gov (United States)

    Cova, Sergio; Ghioni, Massimo; Zappa, Franco; Rech, Ivan; Gulinatti, Angelo

    2006-10-01

    Silicon Single-Photon Avalanche-Diodes (SPAD) are nowadays considered a solid-state alternative to Photomultiplier Tubes (PMT) in single photon counting (SPC) and time-correlated single photon-counting (TCSPC) over the visible spectral range up to 1 micron wavelength. SPADs implemented in planar epitaxial technology compatible with CMOS circuits offer the typical advantages of microelectronic devices (small size, ruggedness, low voltage and low power, etc.). Furthermore, they have inherently higher photon detection efficiency, since they do not rely on electron emission in vacuum from a photocathode as PMT, but instead on the internal photoelectric effect. However, PMTs offer much wider sensitive area, which greatly simplifies the design of optical systems; they provide position-sensitive photon detection and imaging capability; they attain remarkable performance at high counting rate and offer picosecond timing resolution with Micro-Channel Plate (MCP) models. In order to make SPADs more competitive in a broader range of SPC and TCPC applications it is necessary to face both semiconductor technology issues and circuit design issues, which will be here dealt with. Technology issues will be discussed in the context of two possible approaches: employing a standard industrial high-voltage compatible CMOS technology or developing a dedicated CMOS-compatible technology. Circuit design issues will be discussed taking into account problems arising from conflicting requirements set by various required features, such as fast and efficient avalanche quenching and reset, high resolution photon timing, etc.

  15. Detection efficiency calibration of single-photon silicon avalanche photodiodes traceable using double attenuator technique.

    Science.gov (United States)

    López, Marco; Hofer, Helmuth; Kück, Stefan

    2015-12-08

    A highly accurate method for the determination of the detection efficiency of a silicon single-photon avalanche diode (Si-SPAD) is presented. This method is based on the comparison of the detected count rate of the Si-SPAD compared to the photon rate determined from a calibrated silicon diode using a modified attenuator technique, in which the total attenuation is measured in two attenuation steps. Furthermore, a validation of this two-step method is performed using attenuators of higher transmittance. The setup is a tabletop one, laser-based, and fully automated. The measurement uncertainty components are determined and analyzed in detail. The obtained standard measurement uncertainty is < 0.5%. Main contributions are the transmission of the neutral density filters used as attenuators and the spectral responsivity of the calibrated analog silicon diode. Furthermore, the dependence of the detection efficiency of the Si-SPAD on the mean photon number of the impinging laser radiation with Poissonian statistics is investigated.

  16. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  17. A laser ranging system operating at 1036 nm with Geiger-mode silicon avalanche photodiode

    Science.gov (United States)

    Wu, Guang; Ren, Min; Liang, Yan; Wang, Zhiyuan; Pan, Haifeng; Zeng, Heping

    2012-09-01

    We demonstrated a laser ranging experiment obtained with a Geiger-mode silicon avalanche photodiode (Si GAPD). The Surface-to-surface resolution of 15 cm was achieved with the technique of time-correlated single-photon counting. In the experiment, a mode-locked Yb-doped fiber laser at 1036 nm was applied, as the detection efficiency at 1036 nm of Si GAPDs is much higher than that at 1064nm which was widely applied in remote sensing. Due to the single-photon detector, the laser ranging system was able to measure the reflected photon pulses at single-photon level. We realized 32- m laser ranging experiment with a 135-mm diameter Newtonian telescope in daylight. And the system could measure the non-cooperated object longer than 11.3 km far away, which was tested through inserting the optical loss. It presented a potential for hundreds-of-kilometer laser ranging at low-light level.

  18. Application of PN and avalanche silicon photodiodes to low-level optical

    Science.gov (United States)

    Eppeldauer, G.; Schaefer, A. R.

    1988-01-01

    New approaches to the discovery of other planetary systems require very sensitive and stable detection techniques in order to succeed. Two methods in particular, the astrometric and the photometric methods, require this. To begin understanding the problems and limitations of solid state detectors regarding this application, preliminary experiments were performed at the National Bureau of Standards and a low light level detector characterization facility was built. This facility is briefly described, and the results of tests conducted in it are outlined. A breadboard photometer that was used to obtain stellar brightness ratio precision data is described. The design principles of PN and avalanche silicon photodiodes based on low light level measuring circuits are discussed.

  19. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  20. Sub-bandgap linear-absorption-based photodetectors in avalanche mode in PN-diode-integrated silicon microring resonators.

    Science.gov (United States)

    Li, Yu; Feng, Shaoqi; Zhang, Yu; Poon, Andrew W

    2013-12-01

    We report a sub-bandgap linear-absorption-based photodetector in avalanche mode at 1550 nm in a PN-diode-integrated silicon microring resonator. The photocurrent is primarily generated by the defect-state absorption introduced by the boron and phosphorous ion implantation during the PN diode formation. The responsivity is enhanced by both the cavity effect and the avalanche multiplication. We measure a responsivity of ~72.8 mA/W upon 8 V at cavity resonances in avalanche mode, corresponding to a gain of ~72 relative to the responsivity of ~1.0 mA/W upon 3 V at cavity resonances in normal mode. Our device exhibits a 3 dB bandwidth of ~7 GHz and an open eye diagram at 15 Gbit/s upon 8 V.

  1. Hybrid silicon evanescent approach to optical interconnects

    Science.gov (United States)

    Liang, Di; Fang, Alexander W.; Chen, Hui-Wen; Sysak, Matthew N.; Koch, Brian R.; Lively, Erica; Raday, Omri; Kuo, Ying-Hao; Jones, Richard; Bowers, John E.

    2009-06-01

    We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III-V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, Mach-Zehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III-V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM regions are 1520, 1440 and 1480 nm, respectively. The high-temperature operation characteristics of the HSEP are studied experimentally and theoretically. An overall characteristic temperature ( T 0) of 51°C, an above threshold characteristic temperature ( T 1) of 100°C, and a thermal impedance ( Z T ) of 41.8°C/W, which agrees with the theoretical prediction of 43.5°C/W, are extracted from the Fabry-Perot devices. Scaling this platform to larger dimensions is demonstrated up to 150 mm wafer diameter. A vertical outgassing channel design is developed to accomplish high-quality III-V epitaxial transfer to silicon in a timely and dimension-independent fashion.

  2. R and D status of a large-aperture hybrid avalanche photo-detector

    Energy Technology Data Exchange (ETDEWEB)

    Abe, Toshinori, E-mail: toshi@hep.phys.s.u-tokyo.ac.j [University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Aihara, Hiroaki; Iwasaki, Masako; Fujimori, Hiroki; Kasimura, Keizo; Mineo, Sogo; Uchida, Tomohisa [University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Tanaka, Manobu [Institute for Particle and Nuclear Studies, High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Kawai, Yoshihiko; Kyushima, Hiroyuki; Suyama, Motohiro [Electron Tube Division, Hamamatsu Photonics K.K., 314-5 Shimokanzo, Iwata City, Shizuoka 438-0193 (Japan); Shiozawa, Masato [Kamioka Observatory, Institute for Cosmic Ray Research ICRR, University of Tokyo, Higashi-Mozumi, Kamioka-cho, Hida City, Gifu 506-1205 (Japan)

    2010-11-01

    This paper reports on the R and D status of a large-aperture Hybrid Avalanche Photo-Detector (HAPD). We have developed a 13-inch aperture HAPD and its readout system. The HAPD is a photo-detector expected to replace the photomultiplier tube (PMT) in next-generation imaging water Cherenkov detectors such as Hyper Kamiokande. We will present the recent progress made in readout system development. The readout system involves a fast sampling device. The sampling depth (number of cells) has been extended to 256 from 64 in order to measure longer waveform length. The variation in AC gain is now fixed and the input analog bandwidth improved.

  3. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

    Science.gov (United States)

    Chuang, Linus C; Sedgwick, Forrest G; Chen, Roger; Ko, Wai Son; Moewe, Michael; Ng, Kar Wei; Tran, Thai-Truong D; Chang-Hasnain, Connie

    2011-02-09

    Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.

  4. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    Science.gov (United States)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  5. Development of silicon single-photon avalanche diode at Voxtel Inc.

    Science.gov (United States)

    Dhulla, Vinit; Miller, Drake; Mitaru-Berceanu, Dumitru; Kogan, Grigory

    2016-05-01

    In this paper we present the results of electrical and optical characterization of silicon single-photon avalanche diode (SPAD) development at Voxel Inc. Measurements are made on a 40 x 40 SPAD array test chip with column readout, inpixel integrated active quenching circuit, and pixel enable/disable circuit and ability to control dead time from 37 ns to 1.5 μs. The pixel pitch is 35 micrometers and includes three different SPADs with active-area diameters of 8 micrometers, 10 micrometers, and 14 micrometers. The realized SPADs have a breakdown voltage of 22.5 V with peak-to-peak variation of less than 36 mV across the array. At room temperature, with 10% over-bias the DCR is only 0.22 Hz/μm2. The SPADs have a sensitive range of 400 - 900 nm, with a peak photon-detection probability of 23% at 500 nm. After-pulsing and crosstalk are within the noise fluctuation of the SPAD and are not significant.

  6. Silicon nanocrystal-noble metal hybrid nanoparticles

    Science.gov (United States)

    Sugimoto, H.; Fujii, M.; Imakita, K.

    2016-05-01

    We report a novel and facile self-limiting synthesis route of silicon nanocrystal (Si NC)-based colloidally stable semiconductor-metal (gold, silver and platinum) hybrid nanoparticles (NPs). For the formation of hybrid NPs, we employ ligand-free colloidal Si NCs with heavily boron (B) and phosphorus (P) doped shells. By simply mixing B and P codoped colloidal Si NCs with metal salts, hybrid NPs consisting of metal cores and Si NC shells are spontaneously formed. We demonstrate the synthesis of highly uniform and size controllable hybrid NPs. It is shown that codoped Si NCs act as a reducing agent for metal salts and also as a protecting layer to stop metal NP growth. The process is thus self-limiting. The development of a variety of Si NC-based hybrid NPs is a promising first step for the design of biocompatible multifunctional NPs with broad material choices for biosensing, bioimaging and solar energy conversion.We report a novel and facile self-limiting synthesis route of silicon nanocrystal (Si NC)-based colloidally stable semiconductor-metal (gold, silver and platinum) hybrid nanoparticles (NPs). For the formation of hybrid NPs, we employ ligand-free colloidal Si NCs with heavily boron (B) and phosphorus (P) doped shells. By simply mixing B and P codoped colloidal Si NCs with metal salts, hybrid NPs consisting of metal cores and Si NC shells are spontaneously formed. We demonstrate the synthesis of highly uniform and size controllable hybrid NPs. It is shown that codoped Si NCs act as a reducing agent for metal salts and also as a protecting layer to stop metal NP growth. The process is thus self-limiting. The development of a variety of Si NC-based hybrid NPs is a promising first step for the design of biocompatible multifunctional NPs with broad material choices for biosensing, bioimaging and solar energy conversion. Electronic supplementary information (ESI) available: Additional TEM images and extinction spectra of Si-metal hybrid NPs are shown in Fig. S1

  7. Lasing in silicon-organic hybrid waveguides

    Science.gov (United States)

    Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

    2016-03-01

    Silicon photonics enables large-scale photonic-electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon-organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry.

  8. Lasing in silicon-organic hybrid waveguides.

    Science.gov (United States)

    Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

    2016-03-07

    Silicon photonics enables large-scale photonic-electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon-organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry.

  9. An Analytical Avalanche Multiplication Model for Partially Depleted Silicon-on-Insulator SiGe Heterojunction Bipolar Transistors

    Institute of Scientific and Technical Information of China (English)

    XU Xiao-Bo; ZHANG He-Ming

    2011-01-01

    An analytical expression for avalanche multiplication of a novel vertical SiGe partially depleted heterojunction bipolar transistor (HBT) on a thin silicon-on-insulator (SOI) layer is obtained,considering vertical and horizontal impact ionization effects.The avalanche multiplication is found to be dependent on the collector width and doping concentration,and shows kinks with the increase of reverse base-collector bias,which is quite different from that of a conventional bulk HBT.The model is consistent with the experimental and simulation data and is found to be significant for the design and simulation of 0.13μm millimeter wave SiGe SOI BiCMOS technology.

  10. Silicone-containing aqueous polymer dispersions with hybrid particle structure.

    Science.gov (United States)

    Kozakiewicz, Janusz; Ofat, Izabela; Trzaskowska, Joanna

    2015-09-01

    In this paper the synthesis, characterization and application of silicone-containing aqueous polymer dispersions (APD) with hybrid particle structure are reviewed based on available literature data. Advantages of synthesis of dispersions with hybrid particle structure over blending of individual dispersions are pointed out. Three main processes leading to silicone-containing hybrid APD are identified and described in detail: (1) emulsion polymerization of organic unsaturated monomers in aqueous dispersions of silicone polymers or copolymers, (2) emulsion copolymerization of unsaturated organic monomers with alkoxysilanes or polysiloxanes with unsaturated functionality and (3) emulsion polymerization of alkoxysilanes (in particular with unsaturated functionality) and/or cyclic siloxanes in organic polymer dispersions. The effect of various factors on the properties of such hybrid APD and films as well as on hybrid particles composition and morphology is presented. It is shown that core-shell morphology where silicones constitute either the core or the shell is predominant in hybrid particles. Main applications of silicone-containing hybrid APD and related hybrid particles are reviewed including (1) coatings which show specific surface properties such as enhanced water repellency or antisoiling or antigraffiti properties due to migration of silicone to the surface, and (2) impact modifiers for thermoplastics and thermosets. Other processes in which silicone-containing particles with hybrid structure can be obtained (miniemulsion polymerization, polymerization in non-aqueous media, hybridization of organic polymer and polysiloxane, emulsion polymerization of silicone monomers in silicone polymer dispersions and physical methods) are also discussed. Prospects for further developments in the area of silicone-containing hybrid APD and related hybrid particles are presented.

  11. Hybrid Lithium Niobate and Silicon Photonic Waveguides

    CERN Document Server

    Weigel, Peter O; DeRose, Christopher; Pomerene, Andrew T; Starbuck, Andrew L; Lentine, Anthony L; Stenger, Vincent; Mookherjea, Shayan

    2015-01-01

    We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with adiabatic tapers that preserve the symmetry of the fundamental quasi TE mode and prevent mode rotation. We find the average propagation loss in cross section B to be 4.3 dB/cm with a standard deviation of 2.1 dB/cm, comparable with a 3 um SiO2 clad (in place of LN) Si waveguide whose average propagation loss was 3.1 dB/cm with a standard deviation of 2.1 dB/cm.

  12. Widely tunable Vernier ring laser on hybrid silicon.

    Science.gov (United States)

    Hulme, J C; Doylend, J K; Bowers, J E

    2013-08-26

    A hybrid silicon tunable Vernier ring laser is designed and fabricated by integration of two intra-cavity ring resonators, hybrid III-V-on-silicon gain elements, and resistive heaters for thermal tuning. Thermal tuning of more than 40 nm is demonstrated with side mode suppression ratio greater than 35 dB and linewidth of 338 kHz.

  13. Hybrid III-V Silicon Lasers

    Science.gov (United States)

    Bowers, John

    2014-03-01

    Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

  14. Development of a 13-in. Hybrid Avalanche Photo-Detector (HAPD) for a next generation water Cherenkov detector

    Energy Technology Data Exchange (ETDEWEB)

    Nakayama, H. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)]. E-mail: nakkan@hep.phys.s.u-tokyo.ac.jp; Kusaka, A. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Kakuno, H. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Abe, T. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Iwasaki, M. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Aihara, H. [Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Shiozawa, M. [Institute for Cosmic Ray Research, University of Tokyo, Higashi-Mozumi, Kamioka-cho, Hida city, Gifu 506-1205 (Japan); Tanaka, M. [Institute for Particle and Nuclear Studies, High Energy Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Kyushima, H. [Electron Tube Division, Hamamatsu Photonics K.K., 314-5 Simokanzo, Iwata City 438-0193, Shizuoka (Japan); Suyama, M. [Electron Tube Division, Hamamatsu Photonics K.K., 314-5 Simokanzo, Iwata City 438-0193, Shizuoka (Japan); Kawai, Y. [Electron Tube Division, Hamamatsu Photonics K.K., 314-5 Simokanzo, Iwata City 438-0193, Shizuoka (Japan)

    2006-11-01

    We have developed a 13-in. Hybrid Avalanche Photo-Detector (HAPD) for photosensors in next generation water Cherenkov type detectors. We study the performance of the HAPD and the results show good time resolution better than {sigma}=1ns, good sensitivity for single photon detection, wide dynamic range, and good uniformity on the photocathode. The HAPD is also expected to be less expensive than large PMTs because of its simpler structure without dynodes.

  15. Photonic Integration on the Hybrid Silicon Evanescent Device Platform

    Directory of Open Access Journals (Sweden)

    Hyundai Park

    2008-01-01

    Full Text Available This paper reviews the recent progress of hybrid silicon evanescent devices. The hybrid silicon evanescent device structure consists of III-V epitaxial layers transferred to silicon waveguides through a low-temperature wafer bonding process to achieve optical gain, absorption, and modulation efficiently on a silicon photonics platform. The low-temperature wafer bonding process enables fusion of two different material systems without degradation of material quality and is scalable to wafer-level bonding. Lasers, amplifiers, photodetectors, and modulators have been demonstrated with this hybrid structure and integration of these individual components for improved optical functionality is also presented. This approach provides a unique way to build photonic active devices on silicon and should allow application of silicon photonic integrated circuits to optical telecommunication and optical interconnects.

  16. Ultrafast laser functionalized rare phased gold-silicon/silicon oxide nanostructured hybrid biomaterials.

    Science.gov (United States)

    Premnath, P; Tan, B; Venkatakrishnan, K

    2015-12-01

    We introduce a hybrid nanostructured biomaterial that is a combination of rare phases of immiscible gold and silicon oxide, functionalized via ultrafast laser synthesis. For the first time, we show cancer controlling properties of rare phases of gold silicides, which include Au7Si, Au5Si, Au0.7Si2.3 and Au8Si2. Conventionally, pure forms of gold and silicon/silicon oxide are extensively employed in targeted therapy and drug delivery systems due to their unique properties. While silicon and silicon oxide nanoparticles have shown biocompatibility, gold nanoparticles show conflicting results based on their size and material properties. Several studies have shown that gold and silicon combinations produce cell controlling properties, however, these studies were not able to produce a homogenous combination of gold and silicon, owing to its immiscibility. A homogenous combination of gold and silicon may potentially enable properties that have not previously been reported. We describe rare phased gold-silicon oxide nanostructured hybrid biomaterials and its unique cancer controlling properties, owing to material properties, concentration, size and density. The gold-silicon oxide nanostructured hybrid is composed of individual gold-silicon oxide nanoparticles in various concentrations of gold and silicon, some nanoparticles possess a gold-core and silicon-shell like structure. The individual nanoparticles are bonded together forming a three dimensional nanostructured hybrid. The interaction of the nanostructured hybrids with cervical cancer cells showed a 96% reduction in 24h. This engineered nanostructured hybrid biomaterial presents significant potential due to the combination of immiscible gold and silicon oxide in varying phases and can potentially satiate the current vacuum in cancer therapy.

  17. Studies of a hybrid avalanche photo-detector in magnetic field

    Science.gov (United States)

    Šantelj, L.; Adachi, I.; Hataya, K.; Iori, S.; Iwata, S.; Kakuno, H.; Kataura, R.; Kawai, H.; Kindo, H.; Korpar, S.; Križan, P.; Mrvar, M.; Nath, K.; Nishida, S.; Ogawa, S.; Pestotnik, R.; Stanovnik, A.; Seljak, A.; Sumiyoshi, T.; Tabata, M.; Tahirovič, E.; Yusa, Y.

    2017-02-01

    For the Belle II spectrometer a proximity focusing RICH counter with an aerogel radiator (ARICH) will be employed as a PID system in the forward endcap region of the spectrometer. The main challenge was the development of a reliable multichannel sensor for single photons that operates in the high magnetic field of the spectrometer (1.5 T) and withstands the radiation levels expected at the experiment. A 144-channel Hybrid Avalanche Photo-Detector (HAPD) was developed with Hamamatsu Photonics K.K. and the mass production of ∼480 HAPDs was completed recently. While our first tests of HAPD performance in the magnetic field (before mass production) showed no issues, we lately observed a presence of very large signal pulses (∼5000× single photon signal), generated internally within about 20% of HAPDs, while operating in the magnetic field. The rate of these pulses varies from sample to sample. These pulses impact the HAPD performance in two ways: they introduce periods of dead time and, in some cases, damage to the front-end electronics was observed. Here we present conditions under which such large pulses are generated, their properties and impact on HAPD performance, and discuss possible mechanism of their origin.

  18. Silicon bulk micromachined hybrid dimensional artifact.

    Energy Technology Data Exchange (ETDEWEB)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  19. Silicon Geiger-mode avalanche photodiode arrays for photon-starved imaging

    Science.gov (United States)

    Aull, Brian F.

    2015-05-01

    Geiger-mode avalanche photodiodes (GMAPDs) are capable of detecting single photons. They can be operated to directly trigger all-digital circuits, so that detection events are digitally counted or time stamped in each pixel. An imager based on an array of GMAPDs therefore has zero readout noise, enabling quantum-limited sensitivity for photon-starved imaging applications. In this review, we discuss devices developed for 3D imaging, wavefront sensing, and passive imaging.

  20. Hybrid photovoltaics based on semiconductor nanocrystals and amorphous silicon.

    Science.gov (United States)

    Sun, Baoquan; Findikoglu, Alp T; Sykora, Milan; Werder, Donald J; Klimov, Victor I

    2009-03-01

    Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and, perhaps, increased conversion efficiency in the ultraviolet region through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC energy states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared region. The hybrid silicon/PbS NC solar cells show external quantum efficiencies of approximately 7% at infrared energies and 50% in the visible and a power conversion efficiency of up to 0.9%. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs.

  1. Development of a 144-channel Hybrid Avalanche Photo-Detector for Belle II ring-imaging Cherenkov counter with an aerogel radiator

    Energy Technology Data Exchange (ETDEWEB)

    Nishida, S., E-mail: shohei.nishida@kek.jp [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Adachi, I. [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Hamada, N. [Toho University, Funabashi (Japan); Hara, K. [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Iijima, T. [Nagoya University, Nagoya (Japan); Iwata, S.; Kakuno, H. [Tokyo Metropolitan University, Hachioji (Japan); Kawai, H. [Chiba University, Chiba (Japan); Korpar, S.; Krizan, P. [Jozef Stefan Institute, Ljubljana (Slovenia); Ogawa, S. [Toho University, Funabashi (Japan); Pestotnik, R.; Ŝantelj, L.; Seljak, A. [Jozef Stefan Institute, Ljubljana (Slovenia); Sumiyoshi, T. [Tokyo Metropolitan University, Hachioji (Japan); Tabata, M. [Chiba University, Chiba (Japan); Tahirovic, E. [Jozef Stefan Institute, Ljubljana (Slovenia); Yoshida, K. [Tokyo Metropolitan University, Hachioji (Japan); Yusa, Y. [Niigata University, Niigata (Japan)

    2015-07-01

    The Belle II detector, a follow up of the very successful Belle experiment, is under construction at the SuperKEKB electron–positron collider at KEK in Japan. For the PID system in the forward region of the spectrometer, a proximity-focusing ring-imaging Cherenkov counter with an aerogel radiator is being developed. For the position sensitive photon sensor, a 144-channel Hybrid Avalanche Photo-Detector has been developed with Hamamatsu Photonics K.K. In this report, we describe the specification of the Hybrid Avalanche Photo-Detector and the status of the mass production.

  2. Ultrahigh-speed hybrid laser for silicon photonic integrated chips

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Park, Gyeong Cheol; Ran, Qijiang;

    2013-01-01

    and will be 80% in near future. This challenge strongly has motivated replacing electrical interconnects with optical ones even in chip level communications [1]. This chip-level optical interconnects need quite different performance of optoelectronic devices than required for conventional optical communications....... For a light source, the energy consumption per sending a bit is required to be laser diode...... and light-emitting diode (LED) structures have been proposed so far. Our hybrid laser is one of these efforts [2]. The hybrid laser consists of a dielectric reflector, a III-V semiconductor active material, and a high-index-contrast grating (HCG) reflector formed in the silicon layer of a silicon...

  3. Second-order nonlinear silicon-organic hybrid waveguides.

    Science.gov (United States)

    Alloatti, L; Korn, D; Weimann, C; Koos, C; Freude, W; Leuthold, J

    2012-08-27

    We describe a concept for second-order nonlinear optical processes in silicon photonics. A silicon-organic hybrid (SOH) double slot waveguide is dispersion-engineered for mode phase-matching (MPM). The proposed waveguide enables highly efficient nonlinear processes in the mid-IR range. With a cladding nonlinearity of χ(2) = 230 pm/V and 20 dBm pump power at a CW wavelength of 1550 nm, we predict a gain of 14.7 dB/cm for a 3100 nm signal. The suggested structure enables for the first time efficient second-order nonlinear optical mixing in silicon photonics with standard technology.

  4. Investigation of silicon Avalanche Photodiodes for use in scintillating fiber trackers

    CERN Document Server

    Bähr, J; Kantserov, V A; Kell, G; Nahnhauer, R

    2000-01-01

    The readout of scintillating fibers using Silicon APDs and Metal-Resistive-Semiconductor (MRS) devices was investigated in a large temperature range down to -150 deg. C in the laboratory and at an electron beam. In comparison to conventional PMs with bialkali cathodes an improved efficiency was found for low light signals from blue and green scintillating fibers of 0.5 mm diameter.

  5. Radiation Detection Measurements with a New 'Buried Junction' Silicon Avalanche Photodiode

    CERN Document Server

    Lecomte, R; Rouleau, D; Dautet, H; McIntyre, R J; McSween, D; Webb, P

    1999-01-01

    An improved version of a recently developed 'Buried Junction' avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the 'Reverse APD', is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of ener...

  6. Radiation detection measurements with a new ``Buried Junction'' silicon avalanche photodiode

    Science.gov (United States)

    Lecomte, R.; Pepin, C.; Rouleau, D.; Dautet, H.; McIntyre, R. J.; McSween, D.; Webb, P.

    1999-02-01

    An improved version of a recently developed "Buried Junction" avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the "Reverse APD", is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of energy and timing resolution of this device with several scintillators (BGO, LSO and GSO) of potential interest in high-energy physics and PET imaging systems are presented.

  7. A hybrid silicon-PDMS optofluidic platform for sensing applications

    NARCIS (Netherlands)

    Testa, G.; Persichetti, G.; Sarro, P.M.; Bernini, R.

    2014-01-01

    A hybrid silicon-poly(dimethysiloxane) (PDMS) optofluidic platform for lab-on-a-chip applications is proposed. A liquid-core waveguide with a self-aligned solid-core waveguide and a microfluidic device are integrated with a multilayer approach, resulting in a three-dimensional device assembly. The

  8. Organic layers on silicon result in a unique hybrid fet

    NARCIS (Netherlands)

    Faber, E.J.; Albers, M.; Smet, de L.C.P.M.; Olthuis, W.; Zuilhof, H.; Sudholter, E.J.R.; Bergveld, P.; Berg, van den A.

    2008-01-01

    A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent e

  9. A stamped PEDOT:PSS-silicon nanowire hybrid solar cell.

    Science.gov (United States)

    Moiz, Syed Abdul; Nahhas, Ahmed Muhammad; Um, Han-Don; Jee, Sang-Won; Cho, Hyung Koun; Kim, Sang-Woo; Lee, Jung-Ho

    2012-04-13

    A novel stamped hybrid solar cell was proposed using the stamping transfer technique by stamping an active PEDOT:PSS thin layer onto the top of silicon nanowires (SiNWs). Compared to a bulk-type counterpart that fully embeds SiNWs inside PEDOT:PSS, an increase in the photovoltaic efficiency was observed by a factor of ∼4.6, along with improvements in both electrical and optical responses for the stamped hybrid cell. Such improvements for hybrid cells was due to the formation of well-connected and linearly aligned active PEDOT:PSS channels at the top ends of the nanowires after the stamping process. These stamped channels facilitated not only to improve the charge transport, light absorption, but also to decrease the free carriers as well as exciton recombination losses for stamped hybrid solar cells.

  10. Hybrid Silicon Nanocone–Polymer Solar Cells

    KAUST Repository

    Jeong, Sangmoo

    2012-06-13

    Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

  11. Active graphene-silicon hybrid diode for terahertz waves.

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  12. Active graphene–silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

  13. Active graphene-silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  14. Active graphene–silicon hybrid diode for terahertz waves

    OpenAIRE

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The di...

  15. Role of majority and minority carrier barriers silicon/organic hybrid heterojunction solar cells.

    Science.gov (United States)

    Avasthi, Sushobhan; Lee, Stephanie; Loo, Yueh-Lin; Sturm, James C

    2011-12-22

    A hybrid approach to solar cells is demonstrated in which a silicon p-n junction, used in conventional silicon-based photovoltaics, is replaced by a room-temperature fabricated silicon/organic heterojunction. The unique advantage of silicon/organic heterojunction is that it exploits the cost advantage of organic semiconductors and the performance advantages of silicon to enable potentially low-cost, efficient solar cells.

  16. 40 Gbit/s silicon-organic hybrid (SOH) phase modulator

    OpenAIRE

    Alloatti L.; Korn D.; Hillerkuss D.; Vallaitis T.; Li J; Bonk R.; Palmer R.; Schellinger T.; Barklund A.; Dinu R.

    2010-01-01

    A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with an organic material. The silicon organic hybrid (SOH) approach allows combining highly nonlinear electro-optic organic materials with CMOS-compatible silicon photonics technology.

  17. Silicon nanowires in polymer nanocomposites for photovoltaic hybrid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Dkhil, S., E-mail: sadok.bendekhil@gmail.com [Laboratoire Physique des Materiaux, Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Ingenierie des Materiaux Polymeres, IMP, UMR CNRS 5223, Universite Claude Bernard - Lyon 1, 15, boulevard Latarjet, 69622 Villeurbanne (France); Bourguiga, R. [Laboratoire Physique des Materiaux, Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Davenas, J. [Ingenierie des Materiaux Polymeres, IMP, UMR CNRS 5223, Universite Claude Bernard - Lyon 1, 15, boulevard Latarjet, 69622 Villeurbanne (France); Cornu, D. [Institut Europeen des Membranes, UMR CNRS 5635, Ecole Nationale superieure de Chimie, Universite de Montpellier, 1919 route de Mende, F34000 Montpellier (France)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Hybrid solar cells based on blends of poly(N-vinylcarbazole) and silicon nanowires have been fabricated. Black-Right-Pointing-Pointer We have investigated the charge transfer between PVK and SiNWs by the way of the quenching of the PVK photoluminescence. Black-Right-Pointing-Pointer The relation between the morphology of the composite thin films and the charge transfer between SiNWs and PVK has been examined. Black-Right-Pointing-Pointer We have investigated the effects of SiNWs concentration on the photovoltaic characteristics leading to the optimization of a critical SiNWs concentration. - Abstract: Hybrid thin films combining the high optical absorption of a semiconducting polymer film and the electronic properties of silicon fillers have been investigated in the perspective of the development of low cost solar cells. Bulk heterojunction photovoltaic materials based on blends of a semiconductor polymer poly(N-vinylcarbazole) (PVK) as electron donor and silicon nanowires (SiNWs) as electron acceptor have been studied. Composite PVK/SiNWs films were cast from a common solvent mixture. UV-visible spectrometry and photoluminescence of the composites have been studied as a function of the SiNWs concentration. Photoluminescence spectroscopy (PL) shows the existence of a critical SiNWs concentration of about 10 wt % for PL quenching corresponding to the most efficient charge pair separation. The photovoltaic (PV) effect has been studied under illumination. The optimum open-circuit voltage V{sub oc} and short-circuit current density J{sub sc} are obtained for 10 wt % SiNWs whereas a degradation of these parameters is observed at higher SiNWs concentrations. These results are correlated to the formation of aggregates in the composite leading to recombination of the photogenerated charge pairs competing with the dissociation mechanism.

  18. Precision distance measurement using a two-photon absorption process in a silicon avalanche photodiode with saw-tooth phase modulation.

    Science.gov (United States)

    Tanaka, Yosuke; Tominaka, Seiji; Kurokawa, Takashi

    2015-10-01

    We present a novel configuration of a precision laser distance measurement based on the two-photon absorption (TPA) photocurrent from a silicon avalanche photodiode (Si-APD). The proposed system uses saw-tooth phase modulation, known as serrodyne modulation, in order to shift the frequency of the reference light from that of the probe light. It suppresses the coherent interference noise between the probe and the reference. The serrodyne modulation also enables lock-in detection of the TPA photocurrent. Furthermore, it contributes to the reduction of the system components. The precision measurement is experimentally demonstrated by measuring a fiber length difference of 2.6 m with a standard deviation of 27 μm under constant temperature. The high-precision displacement measurement is also demonstrated by measuring the temperature-induced change in the optical path length difference of a fiber interferometer.

  19. Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes

    Science.gov (United States)

    Zhou, P. Y.; Dou, X. M.; Wu, X. F.; Ding, K.; Li, M. F.; Ni, H. Q.; Niu, Z. C.; Jiang, D. S.; Sun, B. Q.

    2014-01-01

    We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 μm emissions of InAs/GaAs QDs to 0.9 μm for detection by silicon avalanche photodiodes. The obtained g(2)(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 μm single-photon source based on semiconductor materials. PMID:24407193

  20. Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes.

    Science.gov (United States)

    Zhou, P Y; Dou, X M; Wu, X F; Ding, K; Li, M F; Ni, H Q; Niu, Z C; Jiang, D S; Sun, B Q

    2014-01-10

    We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 μm emissions of InAs/GaAs QDs to 0.9 μm for detection by silicon avalanche photodiodes. The obtained g((2))(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 μm single-photon source based on semiconductor materials.

  1. Nano-multiplication region avalanche photodiodes and arrays

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  2. Simulation of Low Gain Avalanche Detector characteristics based on the concept of negative feedback in irradiated silicon detectors with carrier impact ionization

    Science.gov (United States)

    Verbitskaya, E.; Eremin, V.; Zabrodskii, A.; Luukka, P.

    2016-12-01

    In this study the main characteristics of silicon Low Gain Avalanche Detectors (LGAD), the dependencies of the collected charge versus bias voltage and fluence, are calculated to fit experimental data. The calculations are based on two previously developed Ioffe Institute models of radiation degradation in Si detectors: 1) a model of two effective energy levels of radiation-induced defects, and 2) a mechanism of internal negative feedback responsible for the gain degradation in irradiated Si detectors originating from the avalanche multiplication at the detector junction. The combination of these models describes well the properties of irradiated p-i-n detectors in a wide range of fluences. For simulating the LGAD characteristics the models are adapted to its n+-pbi-p-p+ structure, where the built-in boron-doped layer pbi produces high electric field sufficient for carrier impact ionization. It is shown that the developed models give adequate quantitative description of the experimental results for the LGADs up to the fluence of 2×1015 n/cm2 including the detector pulse response; however, additional boron removal from the pbi layer is required to have the best correlation with the experimental data. Similar to the physical model developed for silicon strip detectors operated at high voltage, the results are interpreted in terms of the internal negative feedback mechanism. It is shown that in irradiated LGADs this feedback leads to the transfer of a significant fraction of the potential drop from the built-in layer toward the p+ contact. It initiates two negative effects, which both cause the gain degradation with irradiation: the lowering of the electric field in the n+-pbi region that reduces the multiplication probability, and the increase of the collection time and trapping-related charge losses.

  3. Hybrid Silicon Nanostructures with Conductive Ligands and Their Microscopic Conductivity

    Science.gov (United States)

    Bian, Tiezheng; Peck, Jamie N.; Cottrell, Stephen P.; Jayasooriya, Upali A.; Chao, Yimin

    2016-09-01

    Silicon nanoparticles (SiNPs) functionalized with conjugated molecules are a promising potential pathway for generating an alternative category of thermoelectric materials. While the thermoelectric performance of materials based on phenylacetylene-capped SiNPs has been proven, their low conductivity is still a problem for their general application. A muon study of phenylacetylene-capped SiNPs was recently carried out using the HIFI spectrometer at the Rutherford Appleton Laboratory, measuring the avoided level-crossing spectra as a function of temperature. The results show a reduction in the measured line width of the resonance above room temperature, suggesting an activated behaviour for this system. This study shows that the muon study could be a powerful method for investigating microscopic conductivity of hybrid thermoelectric materials.

  4. Effects of optical backscattering on silicon photonic hybrid laser performance

    Science.gov (United States)

    Pacradouni, V.; Klein, J.; Pond, J.

    2016-04-01

    We present numerical results on the effect of backscattering at the junctions of double bus ring resonators in a Vernier ring hybrid laser design. The structure is comprised off a pair of III-V gain media evanescently coupled to a silicon on insulator racetrack comprised of a pair of double bus ring resonators coupled together through straight and flared waveguide sections. We show how the small backscattering at the ring resonator junctions has the effect of splitting and shifting the resonances off the clockwise and counter clockwise propagating modes thereby modifying the feedback spectrum from the ideal case. We then simulate results such as light current (LI) curves, relative intensity noise (RIN) and laser spectrum, and compare the laser performance including backscattering effects with the ideal case.

  5. Integration of hybrid silicon lasers and electroabsorption modulators.

    Science.gov (United States)

    Sysak, Matthew N; Anthes, Joel O; Bowers, John E; Raday, Omri; Jones, Richard

    2008-08-18

    We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of 2GHz with 5 dB DC extinction.

  6. Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection

    Directory of Open Access Journals (Sweden)

    André Darveau

    2007-09-01

    Full Text Available The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS. In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

  7. Optical properties of highly nonlinear silicon-organic hybrid (SOH) waveguide geometries.

    Science.gov (United States)

    Vallaitis, Thomas; Bogatscher, Siegwart; Alloatti, Luca; Dumon, Pieter; Baets, Roel; Scimeca, Michelle L; Biaggio, Ivan; Diederich, François; Koos, Christian; Freude, Wolfgang; Leuthold, Juerg

    2009-09-28

    Geometry, nonlinearity, dispersion and two-photon absorption figure of merit of three basic silicon-organic hybrid waveguide designs are compared. Four-wave mixing and heterodyne pump-probe measurements show that all designs achieve high nonlinearities. The fundamental limitation of two-photon absorption in silicon is overcome using silicon-organic hybrid integration, with a five-fold improvement for the figure of merit (FOM). The value of FOM = 2.19 measured for silicon-compatible nonlinear slot waveguides is the highest value published.

  8. A hybrid pulse combining topology utilizing the combination of modularized avalanche transistor Marx circuits, direct pulse adding, and transmission line transformer.

    Science.gov (United States)

    Li, Jiangtao; Zhao, Zheng; Sun, Yi; Liu, Yuhao; Ren, Ziyuan; He, Jiaxin; Cao, Hui; Zheng, Minjun

    2017-03-01

    Numerous applications driven by pulsed voltage require pulses to be with high amplitude, high repetitive frequency, and narrow width, which could be satisfied by utilizing avalanche transistors. The output improvement is severely limited by power capacities of transistors. Pulse combining is an effective approach to increase the output amplitude while still adopting conventional pulse generating modules. However, there are drawbacks in traditional topologies including the saturation tendency of combining efficiency and waveform oscillation. In this paper, a hybrid pulse combining topology was adopted utilizing the combination of modularized avalanche transistor Marx circuits, direct pulse adding, and transmission line transformer. The factors affecting the combining efficiency were determined including the output time synchronization of Marx circuits, and the quantity and position of magnetic cores. The numbers of the parallel modules and the stages were determined by the output characteristics of each combining method. Experimental results illustrated the ability of generating pulses with 2-14 kV amplitude, 7-11 ns width, and a maximum 10 kHz repetitive rate on a matched 50-300 Ω resistive load. The hybrid topology would be a convinced pulse combining method for similar nanosecond pulse generators based on the solid-state switches.

  9. A hybrid pulse combining topology utilizing the combination of modularized avalanche transistor Marx circuits, direct pulse adding, and transmission line transformer

    Science.gov (United States)

    Li, Jiangtao; Zhao, Zheng; Sun, Yi; Liu, Yuhao; Ren, Ziyuan; He, Jiaxin; Cao, Hui; Zheng, Minjun

    2017-03-01

    Numerous applications driven by pulsed voltage require pulses to be with high amplitude, high repetitive frequency, and narrow width, which could be satisfied by utilizing avalanche transistors. The output improvement is severely limited by power capacities of transistors. Pulse combining is an effective approach to increase the output amplitude while still adopting conventional pulse generating modules. However, there are drawbacks in traditional topologies including the saturation tendency of combining efficiency and waveform oscillation. In this paper, a hybrid pulse combining topology was adopted utilizing the combination of modularized avalanche transistor Marx circuits, direct pulse adding, and transmission line transformer. The factors affecting the combining efficiency were determined including the output time synchronization of Marx circuits, and the quantity and position of magnetic cores. The numbers of the parallel modules and the stages were determined by the output characteristics of each combining method. Experimental results illustrated the ability of generating pulses with 2-14 kV amplitude, 7-11 ns width, and a maximum 10 kHz repetitive rate on a matched 50-300 Ω resistive load. The hybrid topology would be a convinced pulse combining method for similar nanosecond pulse generators based on the solid-state switches.

  10. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

  11. The Vacuum Silicon Photomultiplier Tube (VSiPMT): A new version of a hybrid photon detector

    Energy Technology Data Exchange (ETDEWEB)

    Russo, Stefano, E-mail: srusso@na.infn.i [Universita di Napoli ' Federico II' , Dipartimento di Scienze fisiche, via Cintia 80126 Napoli (Italy); Barbarino, Giancarlo [Universita di Napoli ' Federico II' , Dipartimento di Scienze fisiche, via Cintia 80126 Napoli (Italy); Asmundis, Riccardo de; De Rosa, Gianfranca [Istituto Nazionale di fisica Nucleare, sezione di Napoli, Complesso di Monte S. Angelo Ed. 6, via Cintia 80126 Napoli (Italy)

    2010-11-01

    The future astroparticle experiments will study both energetic phenomena and extremely rare events from astrophysical sources. Since most of these families of experiments are carried out by using scintillation phenomena, Cherenkov or fluorescence radiation, the development of photosensitive detectors seems to be the right way to increase the experimental sensitivity. Therefore we propose an innovative design for a modern, high gain, silicon-based Vacuum Silicon Photomultiplier Tube (VSiPMT), which combines three fully established and well-understood technologies: the manufacture of hemispherical vacuum tubes with the possibility of very large active areas, the photocathode glass deposition and the novel Geiger-mode avalanche silicon photodiode (G-APD) for which a mass production is today available. This new design, based on G-APD as the electron multiplier, allows overcoming the limits of a classical PMT dynode chain.

  12. Research and development on a sub 100 PICO second time-of-flight system based on silicon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Y.; Hirsch, A.; Hauger, A.; Scharenberg, R.; Tincknell, M. [Purdue Univ., West Lafayette, IN (United States); Rai, G. [Lawrence Berkeley Lab., CA (United States)

    1991-12-31

    Particle identification requires a momentum measurement and a second independent determination either energy loss (dE/dx) or time of flight (TOF). To cover a momentum range from 0.1 GeV/c to 1.5 GeV/c in the STAR detector requires both the dE/dx and TOF techniques. This research is designed to develop the avalanche diode (AVD) detectors for TOF systems and evaluate their performance. The test of a small prototype system would be carried out at Purdue and at accelerator test beam sites. The Purdue group has developed a complete test setup for evaluating the time resolution of the AVD`s which includes fast-slow electronic channels, CAMAC based electronic modules and a temperature controlled environment. The AVDs also need to be tested in a 0.5 tesla magnetic field. The Purdue group would augment this test set up to include a magnetic field.

  13. Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

    2016-01-01

    of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

  14. Silver nanoprisms/silicone hybrid rubber materials and their optical limiting property to femtosecond laser

    Science.gov (United States)

    Li, Chunfang; Liu, Miao; Jiang, Nengkai; Wang, Chunlei; Lin, Weihong; Li, Dongxiang

    2017-08-01

    Optical limiters against femtosecond laser are essential for eye and sensor protection in optical processing system with femtosecond laser as light source. Anisotropic Ag nanoparticles are expected to develop into optical limiting materials for femtosecond laser pulses. Herein, silver nanoprisms are prepared and coated by silica layer, which are then doped into silicone rubber to obtain hybrid rubber sheets. The silver nanoprisms/silicone hybrid rubber sheets exhibit good optical limiting property to femtosecond laser mainly due to nonlinear optical absorption.

  15. Nano- and micro-structured silicon for hybrid near-infrared photodetectors

    Science.gov (United States)

    Äńerek, V.; Głowacki, E. D.; Bednorz, M.; Demchyshyn, S.; Sariciftci, N. S.; Ivanda, M.

    2016-05-01

    Structuring surface and bulk of crystalline silicon on different length scales can significantly alter its properties and possibly improve the performance of opto-electronic devices and sensors based on silicon. Different dominant feature scales are responsible for modification of some of electronic and optical properties of silicon. Several easily reproducible chemical methods for facile structuring of silicon on nano and micro-scales, based on both electroless and anodic etching of silicon in hydrofluoric acid based etchants, and chemical anisotropic etching of silicon in basic environments, are presented. We show how successive micro and nano structuring creates hierarchical silicon surfaces, which can be used to simultaneously exploit the advantages of both structuring feature length scales. Finally, we demonstrate a large increase in photocurrent obtained from a hybrid structured silicon/organic near-infrared photodetector. Improved silicon/6,6'-dibromoindigo hybrid photodiodes were prepared by nano- and micro-structuring the silicon part of the heterojunction by wet chemical etching methods. Photocurrent and spectral responsivity were improved in comparison to planar diodes by up to two orders of magnitude by optimization of the silicon structuring process. We show that the improvement in photocurrent is not due to the increase in surface area or light trapping.

  16. Nanostructured copper/porous silicon hybrid systems as efficient sound-emitting devices.

    OpenAIRE

    Recio-Sánchez, Gonzalo; Namura, Kyoko; Suzuki, Motofumi; Martín-Palma, Raúl J.

    2014-01-01

    In the present work, the photo-acoustic emission from nanostructured copper/porous silicon hybrid systems was studied. Copper nanoparticles were grown by photo-assisted electroless deposition on crystalline silicon and nanostructured porous silicon (nanoPS). Both the optical and photo-acoustic responses from these systems were determined. The experimental results show a remarkable increase in the photo-acoustic intensity when copper nanoparticles are incorporated to the porous structure. The ...

  17. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    Energy Technology Data Exchange (ETDEWEB)

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C. [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe (Germany); Koeber, S.; Freude, W., E-mail: christian.koos@kit.edu; Koos, C., E-mail: christian.koos@kit.edu [Institute of Photonics and Quantum Electronics, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen (Germany); Rembe, C. [Polytec GmbH, 76337 Waldbronn (Germany)

    2014-05-27

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB.

  18. Nanostructured copper/porous silicon hybrid systems as efficient sound-emitting devices.

    Science.gov (United States)

    Recio-Sánchez, Gonzalo; Namura, Kyoko; Suzuki, Motofumi; Martín-Palma, Raúl J

    2014-01-01

    In the present work, the photo-acoustic emission from nanostructured copper/porous silicon hybrid systems was studied. Copper nanoparticles were grown by photo-assisted electroless deposition on crystalline silicon and nanostructured porous silicon (nanoPS). Both the optical and photo-acoustic responses from these systems were determined. The experimental results show a remarkable increase in the photo-acoustic intensity when copper nanoparticles are incorporated to the porous structure. The results thus suggest that the Cu/nanoPS hybrid systems are suitable candidates for several applications in the field of thermoplasmonics, including the development of sound-emitting devices of great efficiency.

  19. Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

    Institute of Scientific and Technical Information of China (English)

    Aritra Acharyya; Suranjana Banerjee; J.P.Banerjee

    2013-01-01

    The authors have developed a large-signal simulation technique extending an in-house small-signal simulation code for analyzing a 94 GHz double-drift region impact avalanche transit time device based on silicon with a non-sinusoidal voltage excitation and studied the effect of junction temperature between 300 and 550 K on the large-signal characteristics of the device for both continuous wave (CW) and pulsed modes of operation.Results show that the large-signal RF power output of the device in both CW and pulsed modes increases with the increase of voltage modulation factor up to 60%,but decreases sharply with further increase of voltage modulation factor for a particular junction temperature; while the same parameter increases with the increase of junction temperature for a particular voltage modulation factor.Heat sinks made of copper and type-ⅡA diamond are designed to carry out the steady-state and transient thermal analysis of the device operating in CW and pulsed modes respectively.Authors have adopted Olson's method to carry out the transient analysis of the device,which clearly establishes the superiority of type-ⅡA diamond over copper as the heat sink material of the device from the standpoint of the undesirable effect of frequency chirping due to thermal transients in the pulsed mode.

  20. Aging Avalanches

    Science.gov (United States)

    Boettcher, Stefan; Paczuski, Maya

    1997-03-01

    We have shown that in an analytically solvable model of Self-Organized Criticality (SOC)(S. Boettcher & M. Paczuski, Phys. Rev. Lett. 76), 348 (1996). the evolving avalanche is governed by an equation of motion with a memory term that ranges over all past events.(S. Boettcher & M. Paczuski, Phys. Rev. E 54), 1082 (1996). The solution for the propagator shows sub-diffusive behavior with a broad exponential tail. Numerical studies of the temporal correlations during avalanches in a variety of SOC systems indicate that history dependence and hierarchical structures are generic features which emerge dynamically from simple local update rules. In particular, we find(S. Boettcher & M. Paczuski, ``Off-Equilibrium Behavior and Aging in Self-Organized Criticality'', (in preparation).) ``aging'' similar to the slow relaxation behavior in disordered systems that move through ``rugged landscapes'' in phase space, such as spin glasses.

  1. Numerical simulations for the effiency improvement of hybrid dye-microcrystalline silicon pin-solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Burdorf, Sven; Bauer, Gottfried Heinrich; Brueggemann, Rudolf [Institut fuer Physik, Carl von Ossietzky Universitaet, Oldenburg (Germany)

    2011-07-01

    Hybrid solar cells consisting of dye sensitizers incorporated in the i-layer of microcrystalline silicon pin solar cell have been proposed and even recently processed. The dye sensitizer molecules are embedded in the matrix and enhance the overall absorption of the dye-matrix system due to their high absorption coefficient in the spectral range interesting for photovoltaic applications. However, the charge transport properties of dyes are quite poor. Microcrystalline silicon on the other hand has acceptable charge transport properties, while the absorption, given a layer thickness in the micron range, is relatively poor. This contribution investigates the effiency improvement of hybrid dye-microcrystalline solar cells compared to pure microcrystalline solar cells by simulation. The results indicate that, under optimal conditions, the effiency can be improved by more than 20 % compared to a pure microcrystalline silicon cell. The thickness reduction for the hybrid system can be as large as 50 % for the same effiency.

  2. Rear interface engineering of hybrid organic-silicon nanowire solar cells via blade coating.

    Science.gov (United States)

    Lai, Yi-Chun; Chang, Yu-Fan; Tsai, Pei-Ting; Chang, Jan-kai; Tseng, Wei-Hsuan; Lin, Yi-Cheng; Hsiao, Chu-Yen; Zan, Hsiao-Wen; Wu, Chih-I; Chi, Gou-Chung; Meng, Hsin-Fei; Yu, Peichen

    2016-01-25

    In this work, we investigate blade-coated organic interlayers at the rear surface of hybrid organic-silicon photovoltaics based on two small molecules: Tris(8-hydroxyquinolinato) aluminium (Alq(3)) and 1,3-bis(2-(4-tert-butylphenyl)-1,3,4-oxadiazol-5-yl) benzene (OXD-7). In particular, soluble Alq(3) resulting in a uniform thin film with a root-mean-square roughness organic-silicon photovoltaics.

  3. A hybrid organic semiconductor/silicon photodiode for efficient ultraviolet photodetection.

    Science.gov (United States)

    Levell, J W; Giardini, M E; Samuel, I D W

    2010-02-15

    A method employing conjugated polymer thin film blends is shown to provide a simple and convenient way of greatly enhancing the ultraviolet response of silicon photodetectors. Hybrid organic semiconductor/silicon photodetectors are demonstrated using fluorene copolymers and give a quantum efficiency of 60% at 200 nm. The quantum efficiency is greater than 34% over the entire 200-620 nm range. These devices show promise for use in high sensitivity, low cost UV-visible photodetection and imaging applications.

  4. Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

    2015-09-21

    Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

  5. High Power Broadband Multispectral Source on a Hybrid Silicon Chip

    Science.gov (United States)

    2017-03-14

    silicon photonic network on chip,” Optica 3(7), 785–786 (2016). [8] Stanton, E. J., Heck, M. J. R., Bovington, J., Spott, A., and Bowers, J. E...Hutchinson, J., Shin, J.-H., Fish, G., and Fang, A., “Integrated silicon photonic laser sources for telecom and datacom,” in [National Fiber Optic...Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom -band-derived pump source,” Nat. Photon. 4(8), 561–564 (2010

  6. One-dimensional/two-dimensional hybridization for self-supported binder-free silicon-based lithium ion battery anodes.

    Science.gov (United States)

    Wang, Bin; Li, Xianglong; Luo, Bin; Jia, Yuying; Zhi, Linjie

    2013-02-21

    A unique silicon-based anode for lithium ion batteries is developed via the facile hybridization of one-dimensional silicon nanowires and two-dimensional graphene sheets. The resulting paper-like film holds advantages highly desirable for not only accommodating the volume change of silicon, but also facilitating the fast transport of electron and lithium ions.

  7. Integrated optical frequency shifter in silicon-organic hybrid (SOH) technology.

    Science.gov (United States)

    Lauermann, M; Weimann, C; Knopf, A; Heni, W; Palmer, R; Koeber, S; Elder, D L; Bogaerts, W; Leuthold, J; Dalton, L R; Rembe, C; Freude, W; Koos, C

    2016-05-30

    We demonstrate for the first time a waveguide-based frequency shifter on the silicon photonic platform using single-sideband modulation. The device is based on silicon-organic hybrid (SOH) electro-optic modulators, which combine conventional silicon-on-insulator waveguides with highly efficient electro-optic cladding materials. Using small-signal modulation, we demonstrate frequency shifts of up to 10 GHz. We further show large-signal modulation with optimized waveforms, enabling a conversion efficiency of -5.8 dB while suppressing spurious side-modes by more than 23 dB. In contrast to conventional acousto-optic frequency shifters, our devices lend themselves to large-scale integration on silicon substrates, while enabling frequency shifts that are several orders of magnitude larger than those demonstrated with all-silicon serrodyne devices.

  8. First-Principles Study of Electronic Structure of Type I Hybrid Carbon-Silicon Clathrates

    Science.gov (United States)

    Chan, Kwai S.; Peng, Xihong

    2016-08-01

    A new class of type I hybrid carbon-silicon clathrates has been designed using computational methods by substituting some of the Si atoms in the silicon clathrate framework with carbon atoms. In this work, the electronic structure of hybrid carbon-silicon clathrates with and without alkaline or alkaline-earth metal guest atoms has been computed within the density functional theory framework. The theoretical calculations indicate that a small number of carbon substitutions in the Si46 framework slightly reduces the density of states (DOS) near the band edge and narrows the bandgap of carbon-silicon clathrates. Weak hybridization of the conduction band occurs when alkaline metal (Li, Na, K) atoms are inserted into the structure, while strong hybridization of the conduction band occurs when alkaline-earth metal (Mg, Ca, Ba) atoms are inserted into the hybrid structure. Empty C y Si46- y clathrates within the composition range of 2 ≤ y ≤ 15 can be tuned to exhibit indirect bandgaps of 1.5 eV or less, and may be considered as potential electronic materials.

  9. Analysis of the inner collection efficiency in hybrid silicon solar cells

    OpenAIRE

    Nubile, P.; Torres, P; Hof, Ch.; Fischer, D.

    2008-01-01

    The collection of photogenerated carriers in hybrid silicon solar cells structures were determined by the DICE (dynamic inner collection efficiency) technique. The hybrid solar cells have a microcrystalline n-type emitter and a crystalline p-type base. Cells with amorphous buffers of several thickness and p+ back surface field microcrystalline layers were also studied. Spectral response and reflectivity were measured for each sample in order to obtain the internal spectral response or quantum...

  10. Improved performance of silicon nanowire/cadmium telluride quantum dots/organic hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Zhaoyun [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Jiangsu University of Science and Technology, Zhenjiang 212003, Jiangsu Province (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang, Renqi; Xue, Zhaoguo; Wang, Hongyu; Xu, Jun; Yu, Yao; Su, Weining; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2015-04-15

    Highlights: • We introduce an intermediate cadmium telluride quantum dots (CdTe QDs) layer between the organic with silicon nanowires of hybrid solar cells as a down-shifting layer. • The hybrid solar cell got the maximum short circuit current density of 33.5 mA/cm{sup 2}, getting an increase of 15.1% comparing to solar cell without CdTe QDs. • The PCE of the hybrid solar cells with CdTe QDs layer increases 28.8%. - Abstract: We fabricated silicon nanowire/cadmium telluride quantum dots (CdTe QDs)/organic hybrid solar cells and investigated their structure and electrical properties. Transmission electron microscope revealed that CdTe QDs were uniformly distributed on the surface of the silicon nanowires, which made PEDOT:PSS easily filled the space between SiNWs. The current density–voltage (J–V) characteristics of hybrid solar cells were investigated both in dark and under illumination. The result shows that the performance of the hybrid solar cells with CdTe QDs layer has an obvious improvement. The optimal short-circuit current density (J{sub sc}) of solar cells with CdTe QDs layer can reach 33.5 mA/cm{sup 2}. Compared with the solar cells without CdTe QDs, J{sub sc} has an increase of 15.1%. Power conversion efficiency of solar cells also increases by 28.8%. The enhanced performance of the hybrid solar cells with CdTe QDs layers are ascribed to down-shifting effect of CdTe QDs and the modification of the silicon nanowires surface with CdTe QDs. The result of our experiments suggests that hybrid solar cells with CdTe QDs modified are promising candidates for solar cell application.

  11. [Avalanche accidents and treatment of avalanche victims].

    Science.gov (United States)

    Skaiaa, Sven Christjar; Thomassen, Øyvind

    2016-03-15

    Avalanches may be provoked spontaneously or as a result of human activity, and they trigger the need for considerable rescue resources. Avalanche search and rescue operations are complex and characterised by physical and mental stress. The guidelines for resuscitation of avalanche victims may be perceived as complex and abstruse, which can lead to suboptimal treatment and an increased strain on rescue teams. The purpose of this article is to summarise the principles for medical treatment of avalanche victims.

  12. Low-energy-consumption hybrid lasers for silicon photonics

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Ran, Qijiang; Mørk, Jesper

    2012-01-01

    Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed.......Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed....

  13. Biomimetic and plasmonic hybrid light trapping for highly efficient ultrathin crystalline silicon solar cells.

    Science.gov (United States)

    Zhang, Y; Jia, B; Gu, M

    2016-03-21

    Designing effective light-trapping structures for the insufficiently absorbed long-wavelength light in ultrathin silicon solar cells represents a key challenge to achieve low cost and highly efficient solar cells. We propose a hybrid structure based on the biomimetic silicon moth-eye structure combined with Ag nanoparticles to achieve advanced light trapping in 2 μm thick crystalline silicon solar cells approaching the Yablonovitch limit. By synergistically using the Mie resonances of the silicon moth-eye structure and the plasmonic resonances of the Ag nanoparticles, the integrated absorption enhancement achieved across the usable solar spectrum is 69% compared with the cells with the conventional light trapping design. This is significantly larger than both the silicon moth-eye structure (58%) and Ag nanoparticle (41%) individual light trapping. The generated photocurrent in the 2 μm thick silicon layer is as large as 33.4 mA/cm2, which is equivalent to that generated by a 30 μm single-pass absorption in the silicon. The research paves the way for designing highly efficient light trapping structures in ultrathin silicon solar cells.

  14. Pyramidal texturing of silicon surface via inorganic-organic hybrid alkaline liquor for heterojunction solar cells

    Science.gov (United States)

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Zhao, Ying

    2015-10-01

    We demonstrate a new class of silicon texturing approach based on inorganic (sodium hydroxide, NaOH) and organic (tetramethylammonium hydroxide, TMAH) alkaline liquor etching processes for photovoltaic applications. The first stage of inorganic alkaline etching textures the silicon surface rapidly with large pyramids and reduces the cost. The subsequent organic alkaline second-etching improves the coverage of small pyramids on the silicon surface and strip off the metallic contaminants produced by the first etching step. In addition, it could smoothen the surface of the pyramids to yield good morphology. In this study, the texturing duration of both etching steps was controlled to optimize the optical and electrical properties as well as the surface morphology and passivation characteristics of the silicon substrates. Compared with traditional inorganic NaOH texturing, this hybrid process yields smoother (111) facets of the pyramids, fewer residual Na+ ions on the silicon surface, and a shorter processing period. It also offers the advantage of lower cost compared with the organic texturing method based on the use of only TMAH. We applied this hybrid texturing process to fabricate silicon heterojunction solar cells, which showed a remarkable improvement compared with the cells based on traditional alkaline texturing processes.

  15. Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Sungho, E-mail: shwoo@dgist.ac.kr [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Hoon Jeong, Jae [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kun Lyu, Hong; Jeong, Seonju; Hyoung Sim, Jun; Hyun Kim, Wook [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Soo Han, Yoon [Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongbuk 712-702 (Korea, Republic of); Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

    2012-08-01

    Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-electrochemical redox reaction. This investigation shows that the photocurrent-to-voltage characteristics of the n-Si NW/PEDOT:PSS cells clearly exhibit a stable rectifying diode behavior. The increase in current density and fill factor using high conductive silicon is attributed to an improved charge transport towards the electrodes achieved by lowering the device's series resistance. Our results also show that the surface area of the nanowire that can form heterojunction domains significantly influences the device performance.

  16. Chip-integrated plasmonic Schottky photodetection based on hybrid silicon waveguides

    Science.gov (United States)

    Lu, Hua; Gu, Min

    2017-03-01

    We numerically and theoretically investigate the plasmonic Schottky photodetection in a novel hybrid silicon-on-insulator waveguide system, which consists of the silicon waveguides and detection area with the metal stripes and doped silicon film on the silicon dioxide substrate. The results illustrate that the fundamental TE mode in the silicon waveguide can be effectively coupled into the metal/silicon waveguide with the excitation of surface plasmon polaritons (SPPs). The coupling is suppressed for the TM mode due to the mismatch between the electric field distributions of the TM and SPP modes. It is found that the coupling efficiency from the TE to SPP mode is dependent on the width and height of the silicon waveguide and can significantly approach 36.1%. The ultracompact configuration yields a high responsivity of 21.7 mA/W and low dark current of 0.45 μA for the photodetection at the communication wavelength. The plasmonic Schottky photodetector could find favorable applications in the chip-integrated optical interconnects and signal processing.

  17. Design of integrated hybrid silicon waveguide optical gyroscope.

    Science.gov (United States)

    Srinivasan, Sudharsanan; Moreira, Renan; Blumenthal, Daniel; Bowers, John E

    2014-10-20

    We propose and analyze a novel highly integrated optical gyroscope using low loss silicon nitride waveguides. By integrating the active optical components on chip, we show the possibility of reaching a detection limit on the order of 19°/hr/√Hz in an area smaller than 10 cm(2). This study examines a number of parameters, including the dependence of sensitivity on sensor area.

  18. Hybrid indium phosphide-on-silicon nanolaser diode

    Science.gov (United States)

    Crosnier, Guillaume; Sanchez, Dorian; Bouchoule, Sophie; Monnier, Paul; Beaudoin, Gregoire; Sagnes, Isabelle; Raj, Rama; Raineri, Fabrice

    2017-04-01

    The most-awaited convergence of microelectronics and photonics promises to bring about a revolution for on-chip data communications and processing. Among all the optoelectronic devices to be developed, power-efficient nanolaser diodes able to be integrated densely with silicon photonics and electronics are essential to convert electrical data into the optical domain. Here, we report a demonstration of ultracompact laser diodes based on one-dimensional (1D) photonic crystal (PhC) nanocavities made in InP nanoribs heterogeneously integrated on a silicon-waveguide circuitry. The specific nanorib design enables an efficient electrical injection of carriers in the nanocavity without spoiling its optical properties. Room-temperature continuous-wave (CW) single-mode operation is obtained with a low current threshold of 100 µA. Laser emission at 1.56 µm in the silicon waveguides is obtained with wall-plug efficiencies greater than 10%. This result opens up exciting avenues for constructing optical networks at the submillimetre scale for on-chip interconnects and signal processing.

  19. Modelling of an ultra-thin silicatene/silicon-carbide hybrid film

    Science.gov (United States)

    Schlexer, Philomena; Pacchioni, Gianfranco

    2016-09-01

    Recently, a well-ordered silicatene/silicon-carbide hybrid thin-film supported on Ru(0 0 0 1) has been reported (2015 Surf. Sci. 632 9-13). The thin-film consist of a monolayer of corner sharing (SiO4)-tetrahedra on top of a (Si2C3) monolayer supported on the Ru(0 0 0 1) surface. This silicatene/silicon-carbide hybrid system may exhibit interesting properties for nano-technological applications and represents another example of a 2D material. We explore the physical and chemical properties of the silicatene/silicon-carbide thin-film using DFT and compare the vibrational spectra with existing experimental data. The characteristics of the silicatene/silicon-carbide hybrid system are compared with those of the bilayer-silicatene (pure SiO2 film). We found large differences in the adsorption modes of the two thin-films on the Ru(0 0 0 1) support. Whereas the bilayer-silicatene physisorbs on the Ru(0 0 0 1) surface, the silicatene/silicon-carbide layer binds via chemisorption. The chemical properties of the two thin-films were probed by adsorption of H atoms at various positions, as well as by Al-doping and the formation of hydroxyl groups (Al-OH). These results show that despite the similar structure of the top layer and the identical metal support (Ru), the mixed silicatene/silicon-carbide system behaves quite differently from the pure silica two-layer counterpart.

  20. Synthesis and characterization of silicon-based polymers for use as organic/inorganic hybrids and silicon carbide precursors

    Science.gov (United States)

    Sellinger, Alan

    Organic/inorganic hybrids from silsesquioxanes. This Dissertation describes the synthesis and characterization of methacrylate, epoxy and liquid crystalline (LC)-containing organic/inorganic hybrid materials based on silsesquioxanes. While the methacrylate and epoxy groups provide polymerizable moieties to the hybrids, the LC component is anticipated to provide toughness, and oxidative stability as well as minimize shrinkage during curing. The inorganic silsesquioxane portion, ((RSiOsb{1.5})sb8, cubes), which closely resembles specific crystalline forms of silica and zeolites, may be covalently linked to a variety of organic functional groups. As a result, single-phase organic/inorganic hybrids are formed that when polymerized mimic silica-reinforced composites. The resultant hybrids are liquids at room temperature, and hence allow for single-phase composite processing, ideal for abrasion-resistant coatings and filling molds, as in dental restorative applications. The reactions are based on inexpensive starting materials, have high yields (>80%), and form soluble products containing up to 65% masked silica. The hybrids were characterized using NMR spectroscopy (sp1H,\\ sp{13}C,\\ sp{29}Si), FTIR, size exclusion chromatography (SEC), and thermal analysis (TGA, DSC). A modified polymethylsilane as a precursor of silicon carbide. It is generally known that polymer precursor routes to silicon carbide (SiC) are very important in the processing of SiC fibers and high performance SiC parts with specific shapes. It is further known that commercial SiC precursor polymers are often not resistant to oxidation, and are based on monomers rich in carbon. As a result of this, their pyrolysis yields SiC rich in oxygen and carbon, a feature which drastically reduces the final materials' ultimate properties (high temperature resistance, tensile strength, modulus). To remedy this, we describe in this work the synthesis and characterization of a modified polymethylsilane (mPMS) which

  1. Hybrid silicon plasmonic organic directional coupler-based modulator

    Science.gov (United States)

    Abdelatty, M. Y.; Zaki, A. O.; Swillam, M. A.

    2017-01-01

    An optical directional coupler (ODC)-based hybrid plasmonic waveguide is designed and demonstrated with a power splitting mechanism that can be tuned by applying an external electric field. The tuning mechanism takes the advantage of electro-optic properties of the embedded polymer layer. The ODC operates under 1550 nm telecommunication wavelength. A finite element method with a perfect matching layer, absorbing boundary condition, is taken up to simulate and analyze the ODC.

  2. Structural and electronic properties of hybrid silicon-germanium nanosheets

    Directory of Open Access Journals (Sweden)

    F. L. Pérez Sánchez

    2014-12-01

    Full Text Available Using first principles molecular calculations, based on the Density Functional Theory (DFT, structural and electronic properties of hybrid graphene—like silicon—germanium circular nanosheets of hexagonal symmetry are investigated. The exchange—correlation functional of Perdew—Wang (PW in the local spin density approximation (LSDA based on the pseudopotentials of Dolg—Bergnre is applied. The finite extension nanosheets are represented by the CnHm—like cluster model with mono—hydrogenated armchair edges. Changes of the physicochemical properties were analyzed to learn on the chemical composition. We have obtained that the corrugation of the hybrid nanosheets is maintained (with respect to the pristine nanosheets of Ge and Si and is more pronounced when there is a high percentage of germanium. Moreover, hybrid nanosheets have ionic bonds (polarity in the interval from 0.18 to 0.77 D and exhibit a semimetal behavior. Three types of chemical compositions are considered: 1 the one—one relationship, 2 formation of Ge dimers and 3 formation of Ge hexagons. In each case it is observed an increase in the chemical reactivity. Finally, analyzing the work function we conclude that in cases 1 and 2 the chemical compositions improve the efficiency of the field emission and thereby they could expand the scope of nanotechnology applications.

  3. Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles.

    Science.gov (United States)

    Liu, Kong; Qu, Shengchun; Zhang, Xinhui; Tan, Furui; Wang, Zhanguo

    2013-02-18

    Silicon nanowire (SiNW) arrays show an excellent light-trapping characteristic and high mobility for carriers. Surface plasmon resonance of silver nanoparticles (AgNPs) can be used to increase light scattering and absorption in solar cells. We fabricated a new kind of SiNW/organic hybrid solar cell by introducing AgNPs. Reflection spectra confirm the improved light scattering of AgNP-decorated SiNW arrays. A double-junction tandem structure was designed to manufacture our hybrid cells. Both short-circuit current and external quantum efficiency measurements show an enhancement in optical absorption of organic layer, especially at lower wavelengths.

  4. Polarization rotation and coupling between silicon waveguide and hybrid plasmonic waveguide.

    Science.gov (United States)

    Kim, Sangsik; Qi, Minghao

    2015-04-20

    We present a polarization rotation and coupling scheme that rotates a TE(0) mode in a silicon waveguide and simultaneously couples the rotated mode to a hybrid plasmonic (HP(0)) waveguide mode. Such a polarization rotation can be realized with a partially etched asymmetric hybrid plasmonic waveguide consisting of a silicon strip waveguide, a thin oxide spacer, and a metal cap made from copper, gold, silver or aluminum. Two implementations, one with and one without the tapering of the metal cap are presented, and different taper shapes (linear and exponential) are also analyzed. The devices have large 3 dB conversion bandwidths (over 200 nm at near infrared) and short length (< 5 μm), and achieve a maximum coupling factor of ∼ 78% with a linearly tapered silver metal cap.

  5. Development of hybrid photon detectors with integrated silicon pixel readout for the RICH counters of LHCb

    CERN Document Server

    Alemi, M; Formenti, F; Gys, Thierry; Piedigrossi, D; Puertolas, D; Rosso, E; Snoeys, W; Wyllie, Ken H

    1999-01-01

    We report on the ongoing work towards a hybrid photon detector with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based $9 on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a fast, binary readout chip with matching pixel electronics. The $9 performance of a half-scale prototype is presented, together with the developments and tests of a full-scale tube with large active area. Specific requirements for pixel front-end and readout electronics in LHCb are outlined, and $9 recent results obtained from pixel chips applicable to hybrid photon detector design are summarized.

  6. Diffusion of interstitial oxygen in silicon and germanium: a hybrid functional study

    Science.gov (United States)

    Colleoni, Davide; Pasquarello, Alfredo

    2016-12-01

    The minimum-energy paths for the diffusion of an interstitial O atom in silicon and germanium are studied through the nudged-elastic-band method and hybrid functional calculations. The reconsideration of the diffusion of O in silicon primarily serves the purpose of validating the procedure for studying the O diffusion in germanium. Our calculations show that the minimum energy path goes through an asymmetric transition state in both silicon and germanium. The stability of these transition states is found to be enhanced by the generation of unpaired electrons in the highest occupied single-particle states. Calculated energy barriers are 2.54 and 2.14 eV for Si and Ge, in very good agreement with corresponding experimental values of 2.53 and 2.08 eV, respectively.

  7. Efficient red emission from europium chelate-silicone host-guest hybrids

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Thanh H.; Bentlage, Michael; Kynast, Ulrich [Muenster Univ. of Applied Sciences, Steinfurt (Germany). Dept. of Chemical Engineering; Lezhnina, Marina M.

    2014-02-15

    Due to their ease of fabrication, chemical stability and optical transparency polydimethylsiloxane-derived silicones ([O-Si(CH{sub 3}){sub 2}]{sub ∞}) are excellent matrices to enable optical functions. We here report on the luminescence of silicone hybrids with red-emitting europium diketonate complexes, which have not been described previously in this matrix. The problem of too low solubility of the pure complexes has been resolved by co-coordination with trioctylphosphine oxide (TOPO), which permits complex concentrations of up to 5 x 10{sup -3} mol L{sup -1}, at the same time maintaining complete transparency. Quantum efficiencies in excess of 60 % could thus be obtained for benzoyltrifluoroacetonates, and near 50 % for thenoyltrifluoroacetonates. These high efficiencies have been confirmed by room-temperature life time measurements, which displayed straight single-exponential decay behavior for both complexes independent of their concentration in the silicone. (orig.)

  8. Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats.

    Science.gov (United States)

    Lauermann, M; Palmer, R; Koeber, S; Schindler, P C; Korn, D; Wahlbrink, T; Bolten, J; Waldow, M; Elder, D L; Dalton, L R; Leuthold, J; Freude, W; Koos, C

    2014-12-01

    We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.

  9. Hybrid silicon nanocrystal-organic light-emitting devices for infrared electroluminescence.

    Science.gov (United States)

    Cheng, Kai-Yuan; Anthony, Rebecca; Kortshagen, Uwe R; Holmes, Russell J

    2010-04-14

    We demonstrate hybrid inorganic-organic light-emitting devices with peak electroluminescence (EL) at a wavelength of 868 nm using silicon nanocrystals (SiNCs). An external quantum efficiency of 0.6% is realized in the forward-emitted direction, with emission originating primarily from the SiNCs. Microscopic characterization indicates that complete coverage of the SiNCs on the conjugated polymer hole-transporting layer is required to observe efficient EL.

  10. Platinum nanoparticle interlayer promoted improvement in photovoltaic performance of silicon/PEDOT:PSS hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Xiao-Qing; Liu, L.F., E-mail: lifeng.liu@inl.int

    2015-01-15

    Inorganic–organic hybrid solar cells have attracted considerable interest in recent years for their low production cost, good mechanical flexibility and ease of processing of polymer films over a large area. Particularly, silicon/conducting polymer hybrid solar cells are extensively investigated and widely believed to be a low-cost alternative to the crystalline silicon solar cells. However, the power conversion efficiency of silicon/conducting polymer solar cells remains low in case hydrogen-terminated silicon is used. In this paper, we report that by introducing a platinum nanoparticle interlayer between the hydrogen-terminated silicon and the conducting polymer poly(3,4-ethylenedioxy thiophene):poly(styrene sulfonate), namely PEDOT:PSS, the power conversion efficiency of the resulting Si/PEDOT:PSS hybrid solar cells can be improved by a factor of 2–3. The possible mechanism responsible for the improvement has been investigated using different techniques including impedance spectroscopy, Mott–Schottky analysis and intensity modulated photocurrent/photovoltage spectroscopy (IMPS/IMVS). The results show that with a platinum nanoparticle interlayer, both the series resistance and charge transport/transfer resistance of the Si/PEDOT:PSS hybrid solar cells are reduced leading to an increased short circuit current density, and the built-in voltage at the space charge region is raised facilitating electron-hole separation. Moreover, the lifetime of charge carriers in the Si/PEDOT:PSS solar cells is extended, namely, the recombination is effectively suppressed which also contributes to the improvement of photovoltaic performance. - Graphical abstract: A platinum nanoparticle interlayer electrolessly deposited between the n-Si:H and PEDOT:PSS can markedly improve the photovoltaic performance of the resulting Si/PEDOT:PSS hybrid solar cells. - Highlights: • A Pt nanoparticle layer is introduced between the Si and PEDOT:PSS in hybrid cells. • The Pt interlayer

  11. A hybrid life-cycle inventory for multi-crystalline silicon PV module manufacturing in China

    Science.gov (United States)

    Yao, Yuan; Chang, Yuan; Masanet, Eric

    2014-11-01

    China is the world’s largest manufacturer of multi-crystalline silicon photovoltaic (mc-Si PV) modules, which is a key enabling technology in the global transition to renewable electric power systems. This study presents a hybrid life-cycle inventory (LCI) of Chinese mc-Si PV modules, which fills a critical knowledge gap on the environmental implications of mc-Si PV module manufacturing in China. The hybrid LCI approach combines process-based LCI data for module and poly-silicon manufacturing plants with a 2007 China IO-LCI model for production of raw material and fuel inputs to estimate ‘cradle to gate’ primary energy use, water consumption, and major air pollutant emissions (carbon dioxide, methane, sulfur dioxide, nitrous oxide, and nitrogen oxides). Results suggest that mc-Si PV modules from China may come with higher environmental burdens that one might estimate if one were using LCI results for mc-Si PV modules manufactured elsewhere. These higher burdens can be reasonably explained by the efficiency differences in China’s poly-silicon manufacturing processes, the country’s dependence on highly polluting coal-fired electricity, and the expanded system boundaries associated with the hybrid LCI modeling framework. The results should be useful for establishing more conservative ranges on the potential ‘cradle to gate’ impacts of mc-Si PV module manufacturing for more robust LCAs of PV deployment scenarios.

  12. One-dimensional photonic crystal slot waveguide for silicon-organic hybrid electro-optic modulators.

    Science.gov (United States)

    Yan, Hai; Xu, Xiaochuan; Chung, Chi-Jui; Subbaraman, Harish; Pan, Zeyu; Chakravarty, Swapnajit; Chen, Ray T

    2016-12-01

    In an on-chip silicon-organic hybrid electro-optic (EO) modulator, the mode overlap with EO materials, in-device effective r33, and propagation loss are among the most critical factors that determine the performance of the modulator. Various waveguide structures have been proposed to optimize these factors, yet there is a lack of comprehensive consideration on all of them. In this Letter, a one-dimensional (1D) photonic crystal (PC) slot waveguide structure is proposed that takes all these factors into consideration. The proposed structure takes advantage of the strong mode confinement within a low-index region in a conventional slot waveguide and the slow-light enhancement from the 1D PC structure. Its simple geometry makes it robust to resist fabrication imperfections and helps reduce the propagation loss. Using it as a phase shifter in a Mach-Zehnder interferometer structure, an integrated silicon-organic hybrid EO modulator was experimentally demonstrated. The observed effective EO coefficient is as high as 490 pm/V. The measured half-wave voltage and length product is less than 1  V·cm and can be further improved. A potential bandwidth of 61 GHz can be achieved and further improved by tailoring the doping profile. The proposed structure offers a competitive novel phase-shifter design, which is simple, highly efficient, and with low optical loss, for on-chip silicon-organic hybrid EO modulators.

  13. Adsorption of Cr(VI onto Hybrid Membrane of Carboxymethyl Chitosan and Silicon Dioxide

    Directory of Open Access Journals (Sweden)

    Yanling Deng

    2017-01-01

    Full Text Available In this study, a new adsorbent material was synthesized by using carboxymethyl chitosan and silicon dioxide. The hybrid membrane was used as an adsorbent for the removal of Cr(VI from aqueous solutions. The adsorption potential of Cr(VI by the hybrid materials was investigated by varying experimental conditions such as pH, contact time, and the dosage of the hybrid membrane. Adsorption isotherms of Cr(VI onto the hybrid membrane were studied with varying initial concentrations under optimum experiment conditions. The surface property of the hybrid membrane was characterized by SEM (scanning electron microscope and Fourier transform infrared spectrometer (FTIR. The concentrations of Cr(VI in solution are determined by ICP-AES (inductively coupled plasma atomic emission spectrometry. The present study investigates the adsorption mechanisms of Cr(VI onto the hybrid membrane. The results provide new insight, demonstrating that the modified hybrid membrane can be an efficient adsorbent for Cr(VI from the aqueous solution.

  14. The avalanche-mode superjunction LED

    NARCIS (Netherlands)

    Dutta, Satadal; Steeneken, Peter G.; Agarwal, Vishal Vishal; Schmitz, Jurriaan; Annema, Anne J.; Hueting, Raymond Josephus Engelbart

    2017-01-01

    Avalanche-mode light-emitting diodes (AMLEDs) in silicon (Si) are potential light sources to enable monolithic optical links in standard CMOS technology, due to the large overlap of their electroluminescent (EL) spectra with the responsivity of Si photodiodes. These EL spectra depend on the reverse

  15. Negative feedback avalanche diode

    Science.gov (United States)

    Itzler, Mark Allen (Inventor)

    2010-01-01

    A single-photon avalanche detector is disclosed that is operable at wavelengths greater than 1000 nm and at operating speeds greater than 10 MHz. The single-photon avalanche detector comprises a thin-film resistor and avalanche photodiode that are monolithically integrated such that little or no additional capacitance is associated with the addition of the resistor.

  16. A hybrid biofuel cell based on electrooxidation of glucose using ultra-small silicon nanoparticles.

    Science.gov (United States)

    Choi, Yongki; Wang, Gang; Nayfeh, Munir H; Yau, Siu-Tung

    2009-06-15

    The ultra-small silicon nanoparticle was shown to be an electrocatalyst for the electrooxidation of glucose. The oxidation appeared to be a first order reaction which involves the transfer of 1 electron. The oxidation potential showed a low onset of -0.4V vs. Ag/AgCl (-0.62 V vs. RHE). The particle was used as the anode catalyst of a prototype hybrid biofuel cell, which operated on glucose and hydrogen peroxide. The output power of the hybrid cell showed a dependence on the enzymes used as the cathode catalyst. The power density was optimized to 3.7 microW/cm(2) when horseradish peroxidase was replaced by microperoxidase-11 (MP-11). Comparing the output power of the hybrid cell to that of a biofuel cell indicates enhanced cell performance due to the fast reaction kinetics of the particle. The long-term stability of the hybrid cell was characterized by monitoring the cell voltage for 5 days. It appeared to that the robustness of the silicon particle resulted in more cell stability compared to the long-term performance of a biofuel cell.

  17. Design and investigation of a novel silicon/ferroelectric hybrid electro-optical microring modulator

    Science.gov (United States)

    Qi, Zhipeng; Hu, Guohua; Liu, Chang; Li, Lei; Yun, Binfeng; Zhang, Ruohu; Cui, Yiping

    2017-02-01

    A silicon (Si) and lanthanum-doped lead zirconium titanate (PLZT) hybrid microring modulator based on silicon-on-insulator (SOI) platform is designed theoretically and investigated numerically in this paper. The heterogeneous integration of PLZT film with Si material enables the waveguide to acquire both excellent electro-optical property and strong mode confinement capacity. Such hybrid microring modulator (100 μm in radius) has a PLZT rib-loaded cladding and is integrated with optimized tuning electrodes. The simulation results demonstrated that the Si/PLZT hybrid microring modulator could operate at 14 GHz with a relative high modulation efficiency (<0.8 V cm), which is much better than the other proposed Si/ferroelectric modulators. Meanwhile, under a driving voltage of 20 V, our modulator exhibits an extinction ratio of 32 dB at 1550.22 nm wavelength and a resonant wavelength tunability of 25 pm/V for TE mode. With these outstanding performances, the Si/PLZT hybrid microring modulator holds a great potential as a reliable on-chip device for optical communications and links.

  18. Flexible silver nanowire meshes for high-efficiency microtextured organic-silicon hybrid photovoltaics.

    Science.gov (United States)

    Chen, Ting-Gang; Huang, Bo-Yu; Liu, Hsiao-Wei; Huang, Yang-Yue; Pan, Huai-Te; Meng, Hsin-Fei; Yu, Peichen

    2012-12-01

    Hybrid organic-silicon heterojunction solar cells promise a significant reduction on fabrication costs by avoiding energy-intensive processes. However, their scalability remains challenging without a low-cost transparent electrode. In this work, we present solution-processed silver-nanowire meshes that uniformly cover the microtextured surface of hybrid heterojunction solar cells to enable efficient carrier collection for large device area. We systematically compare the characteristics and device performance with long and short nanowires with an average length/diameter of 30 μm/115 nm and 15 μm/45 nm, respectively, to those with silver metal grids. A remarkable power conversion efficiency of 10.1% is achieved with a device area of 1 × 1 cm(2) under 100 mW/cm(2) of AM1.5G illumination for the hybrid solar cells employing long wires, which represents an enhancement factor of up to 36.5% compared to the metal grid counterpart. The high-quality nanowire network displays an excellent spatial uniformity of photocurrent generation via distributed nanowire meshes and low dependence on efficient charge transport under a high light-injection condition with increased device area. The capability of silver nanowires as flexible transparent electrodes presents a great opportunity to accelerate the mass deployment of high-efficiency hybrid silicon photovoltaics via simple and rapid soluble processes.

  19. Hybrid organic-inorganic heterojunction solar cells with 12% efficiency by utilizing flexible film-silicon with a hierarchical surface.

    Science.gov (United States)

    Thiyagu, Subramani; Hsueh, Chen-Chih; Liu, Chien-Ting; Syu, Hong-Jhang; Lin, Tzu-Ching; Lin, Ching-Fuh

    2014-03-21

    This paper reports an organic-inorganic hybrid solar cell with a hierarchical surface composed of high density silicon nanoholes and micro-desert textures. High-efficiency organic-inorganic hybrid solar cell Si/PEDOT-PSS with a hierarchical surface, showing a power conversion efficiency of 12%. The structure provides excellent light absorption over 97% for the spectral range of 300 to 1100 nm with a thickness of 60 μm due to internal multiple reflections caused by subwavelength features of high density silicon nanoholes and micro-desert textures. In addition, from the angle of incidence (AOI) observed, even at the large angle of 75°, the reflectance value still exhibits less than 1%. With the advantage of very thin silicon material and inexpensive processing, hybrid silicon/polymer solar cells are promising for various applications and thus could be an economically feasible alternative energy solution in the future.

  20. High Efficiency Organic/Silicon-Nanowire Hybrid Solar Cells: Significance of Strong Inversion Layer

    Science.gov (United States)

    Yu, Xuegong; Shen, Xinlei; Mu, Xinhui; Zhang, Jie; Sun, Baoquan; Zeng, Lingsheng; Yang, Lifei; Wu, Yichao; He, Hang; Yang, Deren

    2015-11-01

    Organic/silicon nanowires (SiNWs) hybrid solar cells have recently been recognized as one of potentially low-cost candidates for photovoltaic application. Here, we have controllably prepared a series of uniform silicon nanowires (SiNWs) with various diameters on silicon substrate by metal-assisted chemical etching followed by thermal oxidization, and then fabricated the organic/SiNWs hybrid solar cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). It is found that the reflective index of SiNWs layer for sunlight depends on the filling ratio of SiNWs. Compared to the SiNWs with the lowest reflectivity (LR-SiNWs), the solar cell based on the SiNWs with low filling ratio (LF-SiNWs) has a higher open-circuit voltage and fill factor. The capacitance-voltage measurements have clarified that the built-in potential barrier at the LF-SiNWs/PEDOT:PSS interface is much larger than that at the LR-SiNWs/PEDOT one, which yields a strong inversion layer generating near the silicon surface. The formation of inversion layer can effectively suppress the carrier recombination, reducing the leakage current of solar cell, and meanwhile transfer the LF-SiNWs/PEDOT:PSS device into a p-n junction. As a result, a highest efficiency of 13.11% is achieved for the LF-SiNWs/PEDOT:PSS solar cell. These results pave a way to the fabrication of high efficiency organic/SiNWs hybrid solar cells.

  1. Extreme Environment Silicon Carbide Hybrid Temperature & Pressure Optical Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Nabeel Riza

    2010-09-01

    This final report contains the main results from a 3-year program to further investigate the merits of SiC-based hybrid sensor designs for extreme environment measurements in gas turbines. The study is divided in three parts. Part 1 studies the material properties of SiC such as temporal response, refractive index change with temperature, and material thermal response reversibility. Sensor data from a combustion rig-test using this SiC sensor technology is analyzed and a robust distributed sensor network design is proposed. Part 2 of the study focuses on introducing redundancy in the sensor signal processing to provide improved temperature measurement robustness. In this regard, two distinct measurement methods emerge. A first method uses laser wavelength sensitivity of the SiC refractive index behavior and a second method that engages the Black-Body (BB) radiation of the SiC package. Part 3 of the program investigates a new way to measure pressure via a distance measurement technique that applies to hot objects including corrosive fluids.

  2. Synthesis, characterization and functionalization of silicon nanoparticle based hybrid nanomaterials for photovoltaic and biological applications

    Science.gov (United States)

    Xu, Zejing

    Silicon nanoparticles are attractive candidates for biological, photovoltaic and energy storage applications due to their size dependent optoelectronic properties. These include tunable light emission, high brightness, and stability against photo-bleaching relative to organic dyes (see Chapter 1). The preparation and characterization of silicon nanoparticle based hybrid nanomaterials and their relevance to photovoltaic and biological applications are described. The surface-passivated silicon nanoparticles were produced in one step from the reactive high-energy ball milling (RHEBM) of silicon wafers with various organic ligands. The surface structure and optical properties of the passivated silicon nanoparticles were systematically characterized. Fast approaches for purifying and at the same time size separating the silicon nanoparticles using a gravity GPC column were developed. The hydrodynamic diameter and size distribution of these size-separated silicon nanoparticles were determined using GPC and Diffusion Ordered NMR Spectroscopy (DOSY) as fast, reliable alternative approaches to TEM. Water soluble silicon nanoparticles were synthesized by grafting PEG polymers onto functionalized silicon nanoparticles with distal alkyne or azide moieties. The surface-functionalized silicon nanoparticles were produced from the reactive high-energy ball milling (RHEBM) of silicon wafers with a mixture of either 5-chloro-1-pentyne in 1-pentyne or 1,7 octadiyne in 1-hexyne to afford air and water stable chloroalkyl or alkynyl terminated nanoparticles, respectively. Nanoparticles with the ω-chloroalkyl substituents were easily converted to ω-azidoalkyl groups through the reaction of the silicon nanoparticles with sodium azide in DMF. The azido terminated nanoparticles were then grafted with monoalkynyl-PEG polymers using a copper catalyzed alkyne-azide cycloaddition (CuAAC) reaction to afford core-shell silicon nanoparticles with a covalently attached PEG shell. Covalently

  3. Resonant silicon nanoparticles for enhancement of light absorption and photoluminescence from hybrid perovskite films and metasurfaces.

    Science.gov (United States)

    Tiguntseva, E; Chebykin, A; Ishteev, A; Haroldson, R; Balachandran, B; Ushakova, E; Komissarenko, F; Wang, H; Milichko, V; Tsypkin, A; Zuev, D; Hu, W; Makarov, S; Zakhidov, A

    2017-08-31

    Recently, hybrid halide perovskites have emerged as one of the most promising types of materials for thin-film photovoltaic and light-emitting devices because of their low-cost and potential for high efficiency. Further boosting their performance without detrimentally increasing the complexity of the architecture is critically important for commercialization. Despite a number of plasmonic nanoparticle based designs having been proposed for solar cell improvement, inherent optical losses of the nanoparticles reduce photoluminescence from perovskites. Here we use low-loss high-refractive-index dielectric (silicon) nanoparticles for improving the optical properties of organo-metallic perovskite (MAPbI3) films and metasurfaces to achieve strong enhancement of photoluminescence as well as useful light absorption. As a result, we observed experimentally a 50% enhancement of photoluminescence intensity from a perovskite layer with silicon nanoparticles and 200% enhancement for a nanoimprinted metasurface with silicon nanoparticles on top. Strong increase in light absorption is also demonstrated and described by theoretical calculations. Since both silicon nanoparticle fabrication/deposition and metasurface nanoimprinting techniques are low-cost, we believe that the developed all-dielectric approach paves the way to novel scalable and highly effective designs of perovskite based metadevices.

  4. Hybrid silicon-plasmonics: efficient waveguide interfacing for low-loss integrated switching components

    Science.gov (United States)

    Tsilipakos, Odysseas; Pitilakis, Alexandros; Kriezis, Emmanouil E.

    2012-04-01

    We present a thorough numerical investigation of end-fire coupling between dielectric-loaded surface plasmon polariton (DLSPP) and compact rib/wire silicon-on-insulator (SOI) waveguides. Simulations are based on the three-dimensional vector finite element method. The interface geometrical parameters leading to optimum performance, i.e., maximum coupling efficiency or, equivalently, minimum insertion loss (IL), are identified. We show that coupling efficiencies as high as 85 % are possible. In addition, we quantify the fabrication tolerances about the optimum parameter values. In the same context, we assess the effect of a metallic stripe gap and that of a horizontal offset between waveguides on insertion loss. Finally, we demonstrate that by benefiting form the low-loss coupling between the two waveguides, hybrid silicon-plasmonic 2 x 2 thermo-optic switching elements can outperform their all-plasmonic counterparts in terms of IL. Specifically, we examine two hybrid SOI-DLSPP switching elements, namely, a Mach-Zehnder Interferometer (MZI) and a Multi-Mode-Interference (MMI) switch. In particular, in the MZI case the IL improvement compared to the all-plasmonic counterpart is 4.5 dB. Moreover, the proposed hybrid components maintain the high extinction ratio, small footprint, and efficient tuning traits of plasmonic technology.

  5. Avalanche speed in thin avalanche photodiodes

    Science.gov (United States)

    Ong, D. S.; Rees, G. J.; David, J. P. R.

    2003-04-01

    The duration of the avalanche multiplication process in thin GaAs avalanche photodiodes is investigated using a full band Monte Carlo (FBMC) model. The results are compared with those of a simple random path length (RPL) model which makes the conventional assumptions of a displaced exponential for the ionization path length probability distribution function and that carriers always travel at their saturated drift velocities. We find that the avalanche duration calculated by the RPL model is almost twice of that predicted by the FBMC model, although the constant drift velocities used in the former model are estimated using the latter. The faster response predicted by FBMC model arises partly from the reduced dead space but mainly from the velocity overshoot of ionizing carriers. While the feedback multiplication processes forced by the effects of dead space extend the avalanche duration in short structures, the effects of velocity overshoot in the realistic model more than compensate, significantly improving multiplication bandwidth.

  6. Hybrid Microresonator Enhanced Emission from Silicon-Vacancy and Chromium-Related Color Centers in Diamond

    CERN Document Server

    Radulaski, Marina; Zhang, Jingyuan Linda; Lagoudakis, Konstantinos G; Ishiwata, Hitoshi; Dory, Constantin; Alassaad, Kassem; Ferro, Gabriel; Shen, Zhi-Xun; Melosh, Nicholas; Chu, Steven; Vuckovic, Jelena

    2016-01-01

    We develop hybrid silicon carbide-nanodiamond microresonators for enhancing SiV- and Cr-related color center emission in diamond. Our approach utilizes the similarity of the refractive indices between the two materials, allowing for the resonant mode to be distributed across both components, which is beneficial for achieving Purcell enhancement. In a diamondoid-seeded chemical vapor deposition step, color center rich nanodiamonds are grown on top of 3C-SiC microdisks fabricated on a silicon wafer. The microdisk geometry facilitates preferential positioning of nanodiamonds relative to the whispering gallery mode field distribution. This scalable design has high yield and integrates diamond color centers with a CMOS-compatible platform.

  7. 17.6%-Efficient radial junction solar cells using silicon nano/micro hybrid structures

    Science.gov (United States)

    Lee, Kangmin; Hwang, Inchan; Kim, Namwoo; Choi, Deokjae; Um, Han-Don; Kim, Seungchul; Seo, Kwanyong

    2016-07-01

    We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm2 exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm-2 because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the proposed hybrid structure to become a foundational technology for the development of highly efficient radial junction solar cells.We developed a unique nano- and microwire hybrid structure by selectively modifying only the tops of microwires using metal-assisted chemical etching. The proposed nano/micro hybrid structure not only minimizes surface recombination but also absorbs 97% of incident light under AM 1.5G illumination, demonstrating outstanding light absorption compared to that of planar (59%) and microwire arrays (85%). The proposed hybrid solar cells with an area of 1 cm2 exhibit power conversion efficiencies (Eff) of up to 17.6% under AM 1.5G illumination. In particular, the solar cells show a high short-circuit current density (Jsc) of 39.5 mA cm-2 because of the high light-absorbing characteristics of the nanostructures. This corresponds to an approximately 61.5% and 16.5% increase in efficiency compared to that of a planar silicon solar cell (Eff = 10.9%) and a microwire solar cell (Eff = 15.1%), respectively. Therefore, we expect the

  8. G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

    KAUST Repository

    Wang, H.

    2014-05-13

    Electronic structure calculations employing screened hybrid density functional theory are used to gain fundamental insight into the interaction of carbon interstitial (Ci) and substitutional (Cs) atoms forming the CiCs defect known as G-center in silicon (Si). The G-center is one of the most important radiation related defects in Czochralski grown Si. We systematically investigate the density of states and formation energy for different types of CiCs defects with respect to the Fermi energy for all possible charge states. Prevalence of the neutral state for the C-type defect is established.

  9. A-centers in silicon studied with hybrid density functional theory

    KAUST Repository

    Wang, Hao

    2013-07-29

    Density functional theory employing hybrid functional is used to gain fundamental insight into the interaction of vacancies with oxygen interstitials to form defects known as A-centers in silicon. We calculate the formation energy of the defect with respect to the Fermi energy for all possible charge states. It is found that the neutral and doubly negatively charged A-centers dominate. The findings are analyzed in terms of the density of states and discussed in view of previous experimental and theoretical studies.

  10. VV and VO2 defects in silicon studied with hybrid density functional theory

    KAUST Repository

    Christopoulos, Stavros Richard G

    2014-12-07

    The formation of VO (A-center), VV and VO2 defects in irradiated Czochralski-grown silicon (Si) is of technological importance. Recent theoretical studies have examined the formation and charge states of the A-center in detail. Here we use density functional theory employing hybrid functionals to analyze the formation of VV and VO2 defects. The formation energy as a function of the Fermi energy is calculated for all possible charge states. For the VV and VO2 defects double negatively charged and neutral states dominate, respectively.

  11. Directly modulated and fully tunable hybrid silicon lasers for future generation of coherent colorless ONU.

    Science.gov (United States)

    de Valicourt, G; Le Liepvre, A; Vacondio, F; Simonneau, C; Lamponi, M; Jany, C; Accard, A; Lelarge, F; Make, D; Poingt, F; Duan, G H; Fedeli, J-M; Messaoudene, S; Bordel, D; Lorcy, L; Antona, J-C; Bigo, S

    2012-12-10

    We propose and demonstrate asymmetric 10 Gbit/s upstream--100 Gbit/s downstream per wavelength colorless WDM/TDM PON using a novel hybrid-silicon chip integrating two tunable lasers. The first laser is directly modulated in burst mode for upstream transmission over up to 25 km of standard single mode fiber and error free transmission over 4 channels across the C-band is demonstrated. The second tunable laser is successfully used as local oscillator in a coherent receiver across the C-band simultaneously operating with the presence of 80 downstream co-channels.

  12. Enhanced photovoltaic performance of organic/silicon nanowire hybrid solar cells by solution-evacuated method.

    Science.gov (United States)

    Wang, Wei-Li; Zou, Xian-Shao; Zhang, Bin; Dong, Jun; Niu, Qiao-Li; Yin, Yi-An; Zhang, Yong

    2014-06-01

    A method has been developed to fabricate organic-inorganic hybrid heterojunction solar cells based on n-type silicon nanowire (SiNW) and poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) hybrid structures by evacuating the PEDOT:PSS solution with dip-dropping on the top of SiNWs before spin-coating (solution-evacuating). The coverage and contact interface between PEDOT:PSS and SiNW arrays can be dramatically enhanced by optimizing the solution-evacuated time. The maximum power conversion efficiency (PCE) reaches 9.22% for a solution-evacuated time of 2 min compared with 5.17% for the untreated pristine device. The improvement photovoltaic performance is mainly attributed to better organic coverage and contact with an n-type SiNW surface.

  13. Dynamic hybrid life cycle assessment of energy and carbon of multicrystalline silicon photovoltaic systems.

    Science.gov (United States)

    Zhai, Pei; Williams, Eric D

    2010-10-15

    This paper advances the life cycle assessment (LCA) of photovoltaic systems by expanding the boundary of the included processes using hybrid LCA and accounting for the technology-driven dynamics of embodied energy and carbon emissions. Hybrid LCA is an extended method that combines bottom-up process-sum and top-down economic input-output (EIO) methods. In 2007, the embodied energy was 4354 MJ/m(2) and the energy payback time (EPBT) was 2.2 years for a multicrystalline silicon PV system under 1700 kWh/m(2)/yr of solar radiation. These results are higher than those of process-sum LCA by approximately 60%, indicating that processes excluded in process-sum LCA, such as transportation, are significant. Even though PV is a low-carbon technology, the difference between hybrid and process-sum results for 10% penetration of PV in the U.S. electrical grid is 0.13% of total current grid emissions. Extending LCA from the process-sum to hybrid analysis makes a significant difference. Dynamics are characterized through a retrospective analysis and future outlook for PV manufacturing from 2001 to 2011. During this decade, the embodied carbon fell substantially, from 60 g CO(2)/kWh in 2001 to 21 g/kWh in 2011, indicating that technological progress is realizing reductions in embodied environmental impacts as well as lower module price.

  14. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays.

    Science.gov (United States)

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-06-07

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.

  15. Optimization of hybrid organic/inorganic poly(3-hexylthiophene-2,5-diyl)/silicon solar cells

    Science.gov (United States)

    Weingarten, Martin; Sanders, Simon; Stümmler, Dominik; Pfeiffer, Pascal; Vescan, Andrei; Kalisch, Holger

    2016-04-01

    In the last years, hybrid organic/silicon solar cells have attracted great interest in photovoltaic research due to their potential to become a low-cost alternative for the conventionally used silicon pn-junction solar cells. This work is focused on hybrid solar cells based on the polymer poly(3-hexylthiophene-2,5-diyl), which was deposited on n-doped crystalline silicon via spin-coating under ambient conditions. By employing an anisotropic etching step with potassium hydroxide (KOH), the reflection losses at the silicon surface were reduced. Hereby, the short-circuit current density of the hybrid devices was increased by 31%, leading to a maximum power conversion efficiency (PCE) of 13.1% compared to a PCE of 10.7% for the devices without KOH etching. In addition, the contacts were improved by replacing gold with the more conductive silver as top grid material to reduce the contact resistance and by introducing a thin (˜0.5 nm) lithium fluoride layer between the silicon and the aluminum backside contact to improve electron collection and hole blocking. Hereby, the open-circuit voltage and the fill factor of the hybrid solar cells were further improved and devices with very high PCE up to 14.2% have been realized.

  16. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial

    Science.gov (United States)

    Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

    2016-01-01

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications.

  17. Ultracompact on-chip photothermal power monitor based on silicon hybrid plasmonic waveguides

    Science.gov (United States)

    Wu, Hao; Ma, Ke; Shi, Yaocheng; Wosinski, Lech; Dai, Daoxin

    2017-08-01

    We propose and demonstrate an ultracompact on-chip photothermal power monitor based on a silicon hybrid plasmonic waveguide (HPWG), which consists of a metal strip, a silicon core, and a silicon oxide (SiO2) insulator layer between them. When light injected to an HPWG is absorbed by the metal strip, the temperature increases and the resistance of the metal strip changes accordingly due to the photothermal and thermal resistance effects of the metal. Therefore, the optical power variation can be monitored by measuring the resistance of the metal strip on the HPWG. To obtain the electrical signal for the resistance measurement conveniently, a Wheatstone bridge circuit is monolithically integrated with the HPWG on the same chip. As the HPWG has nanoscale light confinement, the present power monitor is as short as 3 μm, which is the smallest photothermal power monitor reported until now. The compactness helps to improve the thermal efficiency and the response speed. For the present power monitor fabricated with simple fabrication processes, the measured responsivity is as high as about 17.7 mV/mW at a bias voltage of 2 V and the power dynamic range is as large as 35 dB.

  18. Ultracompact on-chip photothermal power monitor based on silicon hybrid plasmonic waveguides

    Directory of Open Access Journals (Sweden)

    Wu Hao

    2017-08-01

    Full Text Available We propose and demonstrate an ultracompact on-chip photothermal power monitor based on a silicon hybrid plasmonic waveguide (HPWG, which consists of a metal strip, a silicon core, and a silicon oxide (SiO2 insulator layer between them. When light injected to an HPWG is absorbed by the metal strip, the temperature increases and the resistance of the metal strip changes accordingly due to the photothermal and thermal resistance effects of the metal. Therefore, the optical power variation can be monitored by measuring the resistance of the metal strip on the HPWG. To obtain the electrical signal for the resistance measurement conveniently, a Wheatstone bridge circuit is monolithically integrated with the HPWG on the same chip. As the HPWG has nanoscale light confinement, the present power monitor is as short as ~3 μm, which is the smallest photothermal power monitor reported until now. The compactness helps to improve the thermal efficiency and the response speed. For the present power monitor fabricated with simple fabrication processes, the measured responsivity is as high as about 17.7 mV/mW at a bias voltage of 2 V and the power dynamic range is as large as 35 dB.

  19. Avalanche robustness of SiC Schottky diode

    OpenAIRE

    Dchar, Ilyas; Buttay, Cyril; Morel, Hervé

    2016-01-01

    International audience; Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in the device can increase quickly and will not be uniformly distributed across t...

  20. Ultrathin, flexible organic-inorganic hybrid solar cells based on silicon nanowires and PEDOT:PSS.

    Science.gov (United States)

    Sharma, Manisha; Pudasaini, Pushpa Raj; Ruiz-Zepeda, Francisco; Elam, David; Ayon, Arturo A

    2014-03-26

    Recently, free-standing, ultrathin, single-crystal silicon (c-Si) membranes have attracted considerable attention as a suitable material for low-cost, mechanically flexible electronics. In this paper, we report a promising ultrathin, flexible, hybrid solar cell based on silicon nanowire (SiNW) arrays and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The free-standing, ultrathin c-Si membranes of different thicknesses were produced by KOH etching of double-side-polished silicon wafers for various etching times. The processed free-standing silicon membranes were observed to be mechanically flexible, and in spite of their relatively small thickness, the samples tolerated the different steps of solar cell fabrication, including surface nanotexturization, spin-casting, dielectric film deposition, and metallization. However, in terms of the optical performance, ultrathin c-Si membranes suffer from noticeable transmission losses, especially in the long-wavelength region. We describe the experimental performance of a promising light-trapping scheme in the aforementioned ultrathin c-Si membranes of thicknesses as small as 5.7 μm employing front-surface random SiNW texturization in combination with a back-surface distribution of silver (Ag) nanoparticles (NPs). We report the enhancement of both the short-circuit current density (JSC) and the open-circuit voltage (VOC) that has been achieved in the described devices. Such enhancement is attributable to the plasmonic backscattering effect of the back-surface Ag NPs, which led to an overall 10% increase in the power conversion efficiency (PCE) of the devices compared to similar structures without Ag NPs. A PCE in excess of 6.62% has been achieved in the described devices having a c-Si membrane of thickness 8.6 μm. The described device technology could prove crucial in achieving an efficient, low-cost, mechanically flexible photovoltaic device in the near future.

  1. Hybrid microsystem with functionalized silicon substrate and PDMS sample operating microchannel: A reconfigurable microfluidics scheme

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    A hybrid microsystem with separately functioned temperature controlling substrate and sample operating fluidic microchannel was developed to demonstrate a reconfigurable microfluidics scheme.The temperature controlling substrate integrated a micro heater and a temperature sensor by using traditional silicon-based micromechanical system(MEMS)technique,which guaranteed high performance and robust reliability for repeatable usage.The sample operating fluidic microchannel was prepared by poly-(dimethylsiloxane) (PDMS)based soft lithography technique,which made it cheap enough for disposable applications.The PDMS microchannel chip was attached to the temperature controlling substrate for reconfigurable thermal applications.A thin PDMS film was used to seal the microchannel and bridge the functionalized substrate and the sample inside the channel,which facilitated heat transferring and prevented sample contaminating the temperature controlling substrate.Demonstrated by a one dimensional thermal resistance model,the thin PDMS film was important for the present reconfiguration applications.Thermal performance of this hybrid microsystem was examined,and the experimental results demonstrated that the chip system could work stably over hours with temperature variation less than 0.1oC.Multiple PDMS microchannel chips were tested on one heating substrate sequentially with a maximum intra-chip temperature difference of 1.0oC.DNA extracted from serum of a chronic hepatitis B virus(HBV)patient was amplified by this hybrid microsystem and the gel electrophoresis result indicated that the present reconfigurable microfluidic scheme worked successfully.

  2. Hybrid porphyrin-silicon nanowire field-effect transistor by opto-electrical excitation.

    Science.gov (United States)

    Seol, Myeong-Lok; Choi, Sung-Jin; Choi, Ji-Min; Ahn, Jae-Hyuk; Choi, Yang-Kyu

    2012-09-25

    A porphyrin-silicon nanowire (Si-NW) hybrid field-effect transistor is introduced. The hybrid device has separate electrical and optical gates surrounding the Si-NW channel. Porphyrin, a component of chlorophyll, is employed as an optical gate to modulate the potential of the Si-NW channel. Due to the independently formed hybrid gates, both optical and electrical excitation can effectively modulate the device. The exposed porphyrin optical gate responds to the optical excitation, and independently formed electrical gates respond to the electrical excitation. Charge transfer characteristics between a semiconductor channel and the porphyrin optical gate are deeply investigated. Optical, electrical, and opto-electrical excitation methods are employed to analyze the charging and discharging behaviors. Of these methods, opto-electrical excitation enables the strongest charge transfer because the inversion electron formation by an electrical pulse and the photoinduced charge transfer by an optical stimulus are affected simultaneously. Discharging processes, such as rapid discharging, exponential detrapping, and the formation of metastable states are also analyzed.

  3. Technological and Physical Compatibilities in Hybrid Integration of Laser and Monolithic Integration of Waveguide, Photodetector and CMOS Circuits on Silicon

    NARCIS (Netherlands)

    Zhou, M.J.; Ikkink, T.; Chalmers, J.; Kranenburg, H. van; Albers, H.; Holleman, J.; Lambeck, P.V.; Joppe, J.L.; Bekman, H.H.P.T.; Krijger, A.J.T. de

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  4. Technological and physical compatibilities in hybrid integration of laser and monolithic integration of waveguide, photodetector and CMOS circuits on silicon

    NARCIS (Netherlands)

    Zhou, Ming-Jiang; Ikkink, Ton; Chalmers, John; Kranenburg, van Herma; Albers, Hans; Holleman, Jisk; Lambeck, Paul; Joppe, Jan Leendert; Bekman, Herman; Krijger, de Ton; Lambeck, P.V.

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  5. Investigating the Inverse Square Law with the Timepix Hybrid Silicon Pixel Detector: A CERN [at] School Demonstration Experiment

    Science.gov (United States)

    Whyntie, T.; Parker, B.

    2013-01-01

    The Timepix hybrid silicon pixel detector has been used to investigate the inverse square law of radiation from a point source as a demonstration of the CERN [at] school detector kit capabilities. The experiment described uses a Timepix detector to detect the gamma rays emitted by an [superscript 241]Am radioactive source at a number of different…

  6. Hybrid matrices of ZnO nanofibers with silicone for high water flux photocatalytic degradation of dairy effluent

    DEFF Research Database (Denmark)

    Kanjwal, Muzafar Ahmad; Shawabkeh, Ali Qublan; Alm, Martin

    2016-01-01

    Zinc oxide (ZnO) nanofibers were produced by electrospinning technique and surface coated on silicone elastomer substrate (diameter: 10.0 mm; thickness: 2.0 mm) by a dipcoating method. The obtained hybrid nanoporous matrices were investigated by scanning and transmission electron microscopy (SEM,...

  7. Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s.

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2016-12-26

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

  8. Ultrabroadband Electro-Optic Modulator Based on Hybrid Silicon-Polymer Dual Vertical Slot Waveguide

    Directory of Open Access Journals (Sweden)

    Shouyuan Shi

    2011-01-01

    Full Text Available We present a novel hybrid silicon-polymer dual slot waveguide for high speed and ultra-low driving voltage electro-optic (EO modulation. The proposed design utilizes the unique properties of ferroelectric materials such as LiNbO3 to achieve dual RF and optical modes within a low index nanoslot. The tight mode concentration and overlap in the slot allow the infiltrated organic EO polymers to experience enhanced nonlinear interaction with the applied electric field. Half-wavelength voltage-length product and electro-optic response are rigorously simulated to characterize the proposed design, which reveals ultrabroadband operation, up to 250 GHz, and subvolt driving voltage for a 1 cm long modulator.

  9. Ultrafast laser based hybrid methodology of silicon microstructure fabrication for optoelectronic applications

    Science.gov (United States)

    Kanaujia, Pawan K.; Bulbul, Angika; Parmar, Vinod; Prakash, G. Vijaya

    2017-10-01

    As an alternative approach to conventional lithography based fabrication, simple methodology of ultrafast laser writing followed by chemical processing for fabrication of silicon microstructures is studied and presented. Laser fluence and number of pulses dependent laser-matter interaction study reveals several concurrent extreme nonlinearities that influence the structural morphology in both longitudinal and transverse directions. High intensity femtosecond pulse propagation produces inevitable structural features, such as quasi aperiodic surface textures, V-shaped craters, re-casted melt and debris. To minimize such undesired effects, isotropic and anisotropic chemical etching processes have been systematically optimized. Such hybrid protocols resulted into definite microstructures, with surface quality comparable to those obtained from other lithographic fabrication methods. The proposed methodology is expected to provide control over desired feature sizes, for large-scale and cost-effective fabrication of microstructures for many optoelectronics applications.

  10. Doping strategies to control A-centres in silicon: Insights from hybrid density functional theory

    KAUST Repository

    Wang, Hao

    2014-01-01

    Hybrid density functional theory is used to gain insights into the interaction of intrinsic vacancies (V) and oxygen-vacancy pairs (VO, known as A-centres) with the dopants (D) germanium (Ge), tin (Sn), and lead (Pb) in silicon (Si). We determine the structures as well as binding and formation energies of the DVO and DV complexes. The results are discussed in terms of the density of states and in view of the potential of isovalent doping to control A-centres in Si. We argue that doping with Sn is the most efficient isovalent doping strategy to suppress A-centres by the formation of SnVO complexes, as these are charge neutral and strongly bound. © 2014 the Owner Societies.

  11. G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H.; Schwingenschlögl, U., E-mail: Udo.Schwingenschlogl@kaust.edu.sa [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia); Chroneos, A., E-mail: Alex.Chroneos@open.ac.uk [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom); Department of Materials, Imperial College, London SW7 2AZ (United Kingdom); Londos, C. A.; Sgourou, E. N. [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece)

    2014-05-14

    Electronic structure calculations employing screened hybrid density functional theory are used to gain fundamental insight into the interaction of carbon interstitial (C{sub i}) and substitutional (C{sub s}) atoms forming the C{sub i}C{sub s} defect known as G-center in silicon (Si). The G-center is one of the most important radiation related defects in Czochralski grown Si. We systematically investigate the density of states and formation energy for different types of C{sub i}C{sub s} defects with respect to the Fermi energy for all possible charge states. Prevalence of the neutral state for the C-type defect is established.

  12. Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing.

    Science.gov (United States)

    Jain, Siddharth R; Sysak, Matthew N; Kurczveil, Geza; Bowers, John E

    2011-07-04

    We demonstrate multiple bandgap integration on the hybrid silicon platform using quantum well intermixing. A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering. The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-grown bandgap for optical gain and a 30 nm blue shifted bandgap for modulation. The multi-channel DFB array includes 13 lasers with >90 nm gain-bandwidth. The transponder includes four DFB-EAMs with 14 dB DC extinction at 4 V bias.

  13. Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Chehata, Nadia, E-mail: nadiachehata2@gmail.com [Equipe Dispositifs Electroniques Organiques et Photovoltaïque Moléculaire, Laboratoire de la Matière Condensée et des Nanosciences, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Ltaief, Adnen [Equipe Dispositifs Electroniques Organiques et Photovoltaïque Moléculaire, Laboratoire de la Matière Condensée et des Nanosciences, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Ilahi, Bouraoui [Laboratoire de Micro-optoélectronique et Nanostructures, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Salem, Bassem [Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS - UJF, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Bouazizi, Abdelaziz [Equipe Dispositifs Electroniques Organiques et Photovoltaïque Moléculaire, Laboratoire de la Matière Condensée et des Nanosciences, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Maaref, Hassen [Laboratoire de Micro-optoélectronique et Nanostructures, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Baron, Thierry [Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS - UJF, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); and others

    2014-12-15

    Hybrid nanocomposites based on a nanoscale combination of organic and inorganic semiconductors are a promising way to enhance the performance of solar cells through a higher aspect ratio of the interface and the good processability of polymers. Nanocomposites are based on a heterojunction network between poly (2-methoxy-5-(2-ethyhexyl-oxy)-p-phenylenevinylene) (MEH-PPV) as an organic electron donor and silicon nanowires (SiNWs) as an inorganic electron acceptor. Nanowires (NWs) seem to be a promising material for this purpose, as they provide a large surface area for contact with the polymer and a designated conducting pathway whilst their volume is low. In this paper, silicon nanowires are introduced by mixing them into the polymer matrix. Hybrid nanocomposites films were deposited onto ITO substrate by spin coating method. Optical properties and photocurrent response were investigated. Charge transfer between the polymer and SiNWs has been demonstrated through photoluminescence measurements. The photocurrent density of ITO/MEH-PPV:SiNWs/Al structures have been obtained by J–V characteristics. The J{sub sc} value is about 0.39 µA/cm{sup 2}. - Highlights: • SiNWs synthesis by Vapor–Liquid–Solid (VLS) mechanism. • SiNWs contribution to absorption spectra enhancement of MEH-PPV:SiNWs nanocomposites. • Decrease of PL intensity of MEH-PPV by addition of SiNWs. • Charge transfer process was taken place. • ITO/MEH-PPV:SiNWs/Al structure shows a photovoltaic effect, with a FF of 0.32.

  14. High rate particle tracking and ultra-fast timing with a thin hybrid silicon pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Fiorini, M., E-mail: Massimiliano.Fiorini@cern.ch [CERN, CH-1211 Geneva 23 (Switzerland); Aglieri Rinella, G. [CERN, CH-1211 Geneva 23 (Switzerland); Carassiti, V. [INFN Sezione di Ferrara (Italy); Ceccucci, A. [CERN, CH-1211 Geneva 23 (Switzerland); Cortina Gil, E. [Université Catholique de Louvain, Louvain-la-Neuve (Belgium); Cotta Ramusino, A. [INFN Sezione di Ferrara (Italy); Dellacasa, G.; Garbolino, S.; Jarron, P. [INFN Sezione di Torino (Italy); Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A. [CERN, CH-1211 Geneva 23 (Switzerland); Martin, E. [Université Catholique de Louvain, Louvain-la-Neuve (Belgium); Mazza, G. [INFN Sezione di Torino (Italy); Morel, M.; Noy, M. [CERN, CH-1211 Geneva 23 (Switzerland); Nuessle, G. [Université Catholique de Louvain, Louvain-la-Neuve (Belgium); Perktold, L.; Petagna, P. [CERN, CH-1211 Geneva 23 (Switzerland); and others

    2013-08-01

    The Gigatracker (GTK) is a hybrid silicon pixel detector designed for the NA62 experiment at CERN. The beam spectrometer, made of three GTK stations, has to sustain high and non-uniform particle rate (∼1GHz in total) and measure momentum and angles of each beam track with a combined time resolution of 150 ps. In order to reduce multiple scattering and hadronic interactions of beam particles, the material budget of a single GTK station has been fixed to 0.5% X{sub 0}. The expected fluence for 100 days of running is 2×10{sup 14} 1 MeV n{sub eq}/cm{sup 2}, comparable to the one foreseen in the inner trackers of LHC detectors during 10 years of operation. To comply with these requirements, an efficient and very low-mass (<0.15%X{sub 0}) cooling system is being constructed, using a novel microchannel cooling silicon plate. Two complementary read-out architectures have been produced as small-scale prototypes: one is based on a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other makes use of a constant-fraction discriminator followed by an on-pixel TDC. The read-out ASICs are produced in 130 nm IBM CMOS technology and will be thinned down to 100μm or less. An overview of the Gigatracker detector system will be presented. Experimental results from laboratory and beam tests of prototype bump-bonded assemblies will be described as well. These results show a time resolution of about 170 ps for single hits from minimum ionizing particles, using 200μm thick silicon sensors.

  15. Long-period suspended silicon Bragg grating filter for hybrid near- and mid-infrared operation

    CERN Document Server

    Alonso-Ramos, Carlos; Benedikovic, Daniel; Vakarin, Vladyslav; Duran-Valdeiglesias, Elena; Perez-Galacho, Diego; Cassan, Eric; Marris-Morini, Delphine; Cheben, Pavel; Vivien, Laurent

    2016-01-01

    The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the mid-infrared (MIR) by using near-infrared (NIR) wavelengths, thereby enabling the realization of MIR absorption spectrometers without the need for MIR photodetectors. Nevertheless, due to their comparatively large index contrast and cross-sections, MIR Si strip waveguides are multi-mode at NIR wavelengths, hindering device implementation. Here we present, for the first time, an integrated Bragg grating waveguide filter for hybrid near- and mid-infrared operation. Specifically, the filter is implemented in a single-etch suspended silicon corrugated waveguide with an effectively single-mode operation in NIR region for a waveguide cross-section as large as 0.5 um x 1.1 um. At the same time, the waveguide supports single-mode propagation in MIR region. We demonstrate a long-period w...

  16. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    Science.gov (United States)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-07-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.

  17. Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

    Directory of Open Access Journals (Sweden)

    Matias Urdampilleta

    2015-08-01

    Full Text Available Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer because of silicon’s “semiconductor vacuum” character and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability, and scalability. Here, we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum-dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterize the charge dynamics, which reveals a charge T_{2}^{*} of 200 ps and a relaxation time T_{1} of 100 ns. Additionally, we demonstrate a spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.

  18. Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers.

    Science.gov (United States)

    Zhang, Jingyuan Linda; Ishiwata, Hitoshi; Babinec, Thomas M; Radulaski, Marina; Müller, Kai; Lagoudakis, Konstantinos G; Dory, Constantin; Dahl, Jeremy; Edgington, Robert; Soulière, Veronique; Ferro, Gabriel; Fokin, Andrey A; Schreiner, Peter R; Shen, Zhi-Xun; Melosh, Nicholas A; Vučković, Jelena

    2016-01-13

    We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV(-) color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV(-) on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV(-) centers. Scanning confocal photoluminescence measurements reveal optically active SiV(-) lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV(-) lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV(-) centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

  19. Antenna-coupled silicon-organic hybrid integrated photonic crystal modulator for broadband electromagnetic wave detection

    CERN Document Server

    Zhang, Xingyu; Subbaraman, Harish; Wang, Shiyi; Zhan, Qiwen; Luo, Jingdong; Jen, Alex K -Y; Chung, Chi-jui; Yan, Hai; Pan, Zeyu; Nelson, Robert L; Lee, Charles Y -C; Chen, Ray T

    2015-01-01

    In this work, we design, fabricate and characterize a compact, broadband and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. The large electro-optic (EO) coefficient of organic polymer, the slow-light effects in the silicon slot photonic crystal waveguide (PCW), and the broadband field enhancement provided by the bowtie antenna, are all combined to enhance the interaction of microwaves and optical waves, enabling a high EO modulation efficiency and thus a high sensitivity. The modulator is experimentally demonstrated with a record-high effective in-device EO modulation efficiency of r33=1230pm/V. Modulation response up to 40GHz is measured, with a 3-dB bandwidth of 11GHz. The slot PCW has an interaction length of 300um, and the bowtie antenna has an area smaller than 1cm2. The bowtie antenna in the device is experimentally demonstrated to have a broadband characteristics with a central resonance frequency of 10GHz, as we...

  20. Mode-evolution-based polarization rotation and coupling between silicon and hybrid plasmonic waveguides

    Science.gov (United States)

    Kim, Sangsik; Qi, Minghao

    2015-12-01

    Hybrid plasmonic (HP) modes allow strong optical field confinement and simultaneously low propagation loss, offering a potentially compact and efficient platform for on-chip photonic applications. However, their implementation is hampered by the low coupling efficiency between dielectric guided modes and HP modes, caused by mode mismatch and polarization difference. In this work, we present a mode-evolution-based polarization rotation and coupling structure that adiabatically rotates the TE mode in a silicon waveguide and couples it to the HP mode in a strip silicon-dielectric-metal waveguide. Simulation shows that high coupling factors of 92%, 78%, 75%, and 73% are achievable using Ag, Au, Al, and Cu as the metal cap, respectively, at a conversion length of about 5 μm. For an extremely broad wavelength range of 1300-1800 nm, the coupling factor is >64% with a Ag metal cap, and the total back-reflection power, including all the mode reflections and backscattering, is below -40 dB, due to the adiabatic mode transition. Our device does not require high-resolution lithography and is tolerant to fabrication variations and imperfections. These attributes together make our device suitable for optical transport systems spanning all telecommunication bands.

  1. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Directory of Open Access Journals (Sweden)

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  2. Rock avalanches on glaciers

    OpenAIRE

    Shugar, Daniel

    2011-01-01

    This thesis examines relations between rock avalanches and the glaciers on which they are deposited. I have attempted to understand a geophysical phenomenon from two viewpoints: sedimentology and glaciology. The contributions are both methodological, and practical. I have used a GIS to quantify debris sheet geomorphology. A thorough characterization of rock avalanche debris is a necessary step in understanding the flow mechanics of large landslide. I have also developed a technique for solvin...

  3. Mode hybridization and conversion in silicon-on-insulator nanowires with angled sidewalls.

    Science.gov (United States)

    Dai, Daoxin; Zhang, Ming

    2015-12-14

    The mode property and light propagation in a tapered silicon-on-insulator (SOI) nanowire with angled sidewalls is analyzed. Mode hybridization is observed and mode conversion between the TM fundamental mode and higher-order TE modes happens when light propagates in a waveguide taper which is used very often in the design of photonic integrated devices. This mode conversion ratio is possible to be very high (even close to 100%) when the taper is long enough to be adiabatic, which might be useful for some applications of multimode photonics. When the mode conversion is undesired to avoid any excess loss as well as crosstalk for photonic integrated circuits, one can depress the mode conversion by compensating the vertical asymmetry in the way of reducing the sidewall angle or introducing an optimal refractive index for the upper-cladding. It is also possible to eliminate the undesired mode conversion almost and improve the desired mode conversion greatly by introducing an abrupt junction connecting two sections with different widths to jump over the mode hybridization region.

  4. Structure of biomembrane-on-silicon hybrids derived from X-ray reflectometry

    Energy Technology Data Exchange (ETDEWEB)

    Birkholz, M. [IHP, Im Technologiepark 25, D-15236 Frankfurt (Germany)]. E-mail: birkholz@ihp-microelectronics.com; Zaumseil, P. [IHP, Im Technologiepark 25, D-15236 Frankfurt (Germany); Kittler, M. [IHP, Im Technologiepark 25, D-15236 Frankfurt (Germany); Wallat, I. [Fachbereich Physik, FU Berlin, Arnimallee 14, D-14195 Berlin (Germany); Heyn, M.P. [Fachbereich Physik, FU Berlin, Arnimallee 14, D-14195 Berlin (Germany)

    2006-10-15

    The organic-inorganic interface and its proper structural adjustment are of central importance for the fabrication of hybrid material systems from biomolecules and semiconductors. Such material hybrids are currently under development for several advanced applications, in particular for biomolecular sensing. An investigation of biomolecular immobilization on semiconductor surfaces by X-ray reflectometry (XRR) will be presented. Complete biomembrane patches of purple membrane (PM) from Halobacterium salinarum were immobilized on oxidized and nitrided silicon wafers. A covalent immobilization protocol based on 3-aminopropyltriethoxysilane (APTS) and glutaric dialdehyde (GD) was applied for cross-linking the biomolecules to the semiconductor surface. XRR could be shown to yield the relevant morphological parameters of biomolecular monolayers such as layer thickness, interface roughness and coverage. Synchrotron radiation was not required, but a laboratory rotating anode set-up was sufficient to study the prepared stacking of organic monolayers. According to the measurement and analysis of XRR patterns both cross-linking layers APTS and GD are required for bonding purple membrane patches to SiO{sub 2}/Si, whereas GD alone suffices for cross-linking to Si{sub 3}N{sub 4}/Si. This distinct behavior offers a pathway for nanopatterning of biomolecules on Si surfaces by selective passivation.

  5. Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching

    Science.gov (United States)

    Liu, Ruiyuan; Sun, Teng; Liu, Jiawei; Wu, Shan; Sun, Baoquan

    2016-06-01

    Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm-2 due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization.

  6. Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching.

    Science.gov (United States)

    Liu, Ruiyuan; Sun, Teng; Liu, Jiawei; Wu, Shan; Sun, Baoquan

    2016-06-24

    Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm(-2) due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization.

  7. Hybrid matrices of ZnO nanofibers with silicone for high water flux photocatalytic degradation of dairy effluent

    Energy Technology Data Exchange (ETDEWEB)

    Kanjwal, Muzafar A., E-mail: kanjwalmuzafar@gmail.com [Nano-Bio Science Research Group, DTU-Food Technical University of Denmark, Soltofts Plads, B 227, 2800 Kgs. Lyngby (Denmark); Dept. of Chemical Engineering, College of Engineering, University of Hail, Hail 81451 (Saudi Arabia); Shawabkeh, Ali Qublan [Dept. of Chemical Engineering, College of Engineering, University of Hail, Hail 81451 (Saudi Arabia); Alm, Martin; Thomsen, Peter [BioModics ApS, Gregersensvej 7, DK-2630 Taastrup (Denmark); Barakat, Nasser A.M. [Department of Textile Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Chronakis, Ioannis S., E-mail: ioach@food.dtu.dk [Nano-Bio Science Research Group, DTU-Food Technical University of Denmark, Soltofts Plads, B 227, 2800 Kgs. Lyngby (Denmark)

    2016-09-15

    Zinc oxide (ZnO) nanofibers were produced by electrospinning technique and surface coated on silicone elastomer substrate (diameter: 10.0 mm; thickness: 2.0 mm) by a dipcoating method. The obtained hybrid nanoporous matrices were investigated by scanning and transmission electron microscopy (SEM, TEM), X-ray diffraction (XRD) and Fourier transformation infrared techniques (FTIR). These characterizations reveal that the surface morphology of electrospun nanofibers remained intact by the dipcoating technique. The produced hybrid matrices showed high water flux of 9407 L/m{sup 2}h, 38% removal rate of dairy effluent (DE) and 2298 ml/g h rate of hydrogen production. - Highlights: • Hybrid ZnO silicon nanoporous matrices are introduced. • The water flux is high 9407 L/m{sup 2}h for ZnO silicon nanoporous matrices. • The ZnO silicon nanoporous matrices showed good photocatalytic properties. • The ZnO nanoporous matrices showed 2298 ml/g h rate of hydrogen production.

  8. Preliminary tests of silicon carbide based concretes for hybrid rocket nozzles in a solar furnace

    Science.gov (United States)

    D'Elia, Raffaele; Bernhart, Gérard; Cutard, Thierry; Peraudeau, Gilles; Balat-Pichelin, Marianne

    2014-06-01

    This research is part of the PERSEUS project, a space program concerning hybrid propulsion and supported by CNES. The main goal of this study is to characterise silicon carbide based micro-concrete with a maximum aggregates size of 800 μm, in a hybrid propulsion environment. The nozzle throat has to resist to a highly oxidising polyethylene (PE)/N2O hybrid environment, under temperatures ranging up to 2980 K. The study is divided into two main parts: the first one deals with the thermo-mechanical characterisation of the material up to 1500 K and the second one with an investigation on the oxidation behaviour in a standard atmosphere, under a solar flux up to 13.5 MW/m2. Young's modulus was determined by resonant frequency method: results show an increase with the stabilisation temperature. Four point bending tests have shown a rupture tensile strength increasing with stabilisation temperature, up to 1473 K. Sintering and densification processes are primary causes of this phenomenon. Visco-plastic behaviour appears at 1373 K, due to the formation of liquid phases in cement ternary system. High-temperature oxidation in ambient air was carried out at PROMES-CNRS laboratory, on a 2 kW solar furnace, with a concentration factor of 15,000. A maximum 13.5 MW/m2 incident solar flux and a 7-90 s exposure times have been chosen. Optical microscopy, SEM, EDS analyses were used to determine the microstructure evolution and the mass loss kinetics. During these tests, silicon carbide undergoes active oxidation with production of SiO and CO smokes and ablation. A linear relation between mass loss and time is found. Oxidation tests performed at 13.5 MW/m2 solar flux have shown a mass loss of 10 mg/cm2 after 15 s. After 90 s, the mass loss reaches 60 mg/cm2. Surface temperature measurement is a main point in this study, because of necessity of a thermo-mechanical-ablative model for the material. Smokes appear at around 5.9 MW/m2, leading to the impossibility of useful temperature

  9. Hybrid electrolytes based on ionic liquids and amorphous porous silicon nanoparticles: Organization and electrochemical properties

    KAUST Repository

    Tchalala, Mohammed

    2017-05-06

    Ionic liquids (ILs) and ionic liquid-nanoparticle (IL-NP) hybrid electrolytes have garnered a lot of interest due to their unique properties that stimulate their use in various applications. Herein, we investigate the electrochemical and photo-physical properties of organic-inorganic hybrid electrolytes based on three imidazolium-based ionic liquids, i.e., 1-buthyl-3-methylimidazolium thiocyanate ([bmim] [SCN]), 1-ethyl-3-methylimidazolium tetrafluoroborate ([emim] [BF4]) and 1-buthyl-3-methylimidazolium acetate ([bmim] [Ac]) that are covalently tethered to amorphous porous silicon nanoparticles (ap-Si NPs). We found that the addition of ap-Si NPs confer to the ILs a pronounced boost in the electrocatalytic activity, and in mixtures of ap-Si NPs and [bmim] [SCN], the room-temperature current transport is enhanced by more than 5 times compared to bare [bmim] [SCN]. A detailed structural investigation by transmission electron microscope (TEM) showed that the ap-Si NPs were well dispersed, stabilized and highly aggregated in [bmim] [SCN], [emim] [BF4] and [bmim] [Ac] ILs, respectively. These observations correlate well with the enhanced current transport observed in ap-Si NPs/[bmim] [SCN] evidenced by electrochemical measurements. We interpreted these observations by the use of UV–vis absorbance, photoluminescence (PL), FTIR and solid-state NMR spectroscopy. We found that the ap-Si NPs/[bmim] [SCN] hybrid stands out due to its stability and optical transparency. This behavior is attributed to the iron(III) thiocyanate complexion as per the experimental findings. Furthermore, we found that the addition of NPs to [emim] [BF4] alters the equilibrium of the IL, which consequently improved the stability of the NPs through intermolecular interactions with the two ionic layers (anionic and cationic layers) of the IL. While in the case of [bmim] [Ac], the dispersion of ap-Si NPs was restrained because of the high viscosity of this IL.

  10. Performance of Ultra-Fast Silicon Detectors

    CERN Document Server

    Cartiglia, N; Ely, S; Fadeyev, V; Galloway, Z; Marchetto, F; Mazza, G; Ngo, J; Obertino, M; Parker, C; Rivetti, A; Shumacher, D; Sadrozinski, H F-W; Seiden, A; Zatserklyaniy, A

    2013-01-01

    The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond.

  11. Avalanche diode having reduced dark current and method for its manufacture

    Energy Technology Data Exchange (ETDEWEB)

    Davids, Paul; Starbuck, Andrew Lee; Pomerene, Andrew T. S.

    2017-08-29

    An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

  12. Nanostructured hybrid of immiscible gold and silicon and its effect on proliferation and adhesion of fibroblasts and osteoblasts.

    Science.gov (United States)

    Premnath, Priyatha; Tan, Bo; Venkatakrishnan, Krishnan

    2014-06-01

    Hybrid biomaterials are a combination of two or more different materials that work synergistically to produce superior properties. Nano structuring of such hybrid materials has also posed complications. In this study, we present, for the first time a nanofibrous hybrid of gold and silicon fabricated by femtosecond laser synthesis for tissue engineering applications. The formation of a completely new phase, Au3Si (212) is reported. The formation mechanism is explained by vapor condensation. Particle sizes of 2-10 nm and 37-49 nm for gold and gold concentrations of 35-78% are achieved. The effect of this hybrid on cell growth was assessed using fibroblasts and osteoblasts. There was a significant decrease in both osteoblast and fibroblast proliferation with the increase of gold in the hybrid nanostructure. This novel hybrid nanofibrous matrix provides a method to effectively control the proliferation and adhesion of cells. Femtosecond laser synthesis presents a new standard by which not only a single element biomaterial but also multiple immiscible element hybrid biomaterials can be fabricated. This technique provides a paradigm shift in the fabrication of novel nanostructured immiscible hybrid biomaterials.

  13. Large-Area Superconducting Nanowire Single-Photon Detector with Double-Stage Avalanche Structure

    OpenAIRE

    2016-01-01

    We propose a novel design of superconducting nanowire avalanche photodetectors (SNAPs), which combines the advantages of multi-stage avalanche SNAPs to lower the avalanche current I_AV and that of series-SNAPs to reduce the reset time. As proof of principle, we fabricated 800 devices with large detection area (15 um * 15 um) and five different designs on a single silicon chip for comparison, which include standard SNSPDs, series-3-SNAPs and our modified series-SNAPs with double-stage avalanch...

  14. A Novel Compact and Reliable Hybrid Silicon/Silicon Carbide Device Module for Efficient Power Conversion Project

    Data.gov (United States)

    National Aeronautics and Space Administration — United Silicon Carbide, Inc. proposes to develop a novel compact, efficient and high-temperature power module, based on unique co-packaging approach of normally-off...

  15. High rate particle tracking and ultra-fast timing with a thin hybrid silicon pixel detector

    Science.gov (United States)

    Fiorini, M.; Aglieri Rinella, G.; Carassiti, V.; Ceccucci, A.; Cortina Gil, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A.; Martin, E.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Perktold, L.; Petagna, P.; Petrucci, F.; Poltorak, K.; Riedler, P.; Rivetti, A.; Statera, M.; Velghe, B.

    2013-08-01

    The Gigatracker (GTK) is a hybrid silicon pixel detector designed for the NA62 experiment at CERN. The beam spectrometer, made of three GTK stations, has to sustain high and non-uniform particle rate (∼ 1 GHz in total) and measure momentum and angles of each beam track with a combined time resolution of 150 ps. In order to reduce multiple scattering and hadronic interactions of beam particles, the material budget of a single GTK station has been fixed to 0.5% X0. The expected fluence for 100 days of running is 2 ×1014 1 MeV neq /cm2, comparable to the one foreseen in the inner trackers of LHC detectors during 10 years of operation. To comply with these requirements, an efficient and very low-mass (architectures have been produced as small-scale prototypes: one is based on a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other makes use of a constant-fraction discriminator followed by an on-pixel TDC. The read-out ASICs are produced in 130 nm IBM CMOS technology and will be thinned down to 100 μm or less. An overview of the Gigatracker detector system will be presented. Experimental results from laboratory and beam tests of prototype bump-bonded assemblies will be described as well. These results show a time resolution of about 170 ps for single hits from minimum ionizing particles, using 200 μm thick silicon sensors.

  16. A novel hybrid plasmonic waveguide with loss compensation via electrically pumped gain medium based on silicon platform

    Science.gov (United States)

    Zhu, Ning

    2013-01-01

    In this paper we propose and study a new hybrid plasmonic waveguide structure with gain medium. The structure is based on silicon platform with gain medium to be III-V material, which can be electrically pumped. The whole structure can be realized through the bonding technique. An adhesive polymer layer adopted in the bonding process acts as the low refractive index layer here in the hybrid plasmonic waveguide. Further simulation with gain presented shows that a moderate gain coefficient of 891 cm-1 is required for lossless propagation while keeping subwavelength modal size, especially in the lateral direction which is important for high density integration. Considering the fabrication compatibility, this new SPP structure would be highly favorable in the silicon photonics.

  17. Parametric study of dielectric loaded surface plasmon polariton add-drop filters for hybrid silicon/plasmonic optical circuitry

    Science.gov (United States)

    Dereux, A.; Hassan, K.; Weeber, J.-C.; Djellali, N.; Bozhevolnyi, S. I.; Tsilipakos, O.; Pitilakis, A.; Kriezis, E.; Papaioannou, S.; Vyrsokinos, K.; Pleros, N.; Tekin, T.; Baus, M.; Kalavrouziotis, D.; Giannoulis, G.; Avramopoulos, H.

    2011-01-01

    Surface plasmons polaritons are electromagnetic waves propagating along the surface of a conductor. Surface plasmons photonics is a promising candidate to satisfy the constraints of miniaturization of optical interconnects. This contribution reviews an experimental parametric study of dielectric loaded surface plasmon waveguides ring resonators and add-drop filters within the perspective of the recently suggested hybrid technology merging plasmonic and silicon photonics on a single board (European FP7 project PLATON "Merging Plasmonic and Silicon Photonics Technology towards Tb/s routing in optical interconnects"). Conclusions relevant for dielectric loaded surface plasmon switches to be integrated in silicon photonic circuitry will be drawn. They rely on the opportunity offered by plasmonic circuitry to carry optical signals and electric currents through the same thin metal circuitry. The heating of the dielectric loading by the electric current enables to design low foot-print thermo-optical switches driving the optical signal flow.

  18. Computational studies of formation silicon nanotubes-propylthiouracil hybrids to investigate its role in confining propylthiouracil drug

    Directory of Open Access Journals (Sweden)

    A. Shameli

    2016-03-01

    Full Text Available In order to search for the interaction between Propythiouracil(ptu and infinitely long armchair single-walled silicon nanotubes (SiNTs is investigated using density functional theory (DFT. The structures of individual counterparts and hybrids have been optimized and the molecular properties have been evaluated. The Nuclear magnetic resonance spectroscopy (NMR are witness to the substantial changes in the electronic properties of the SiNTs systems following the attachment of the ptu with the tube surface.

  19. A micropixel avalanche phototransistor for time of flight measurements

    Science.gov (United States)

    Sadigov, A.; Suleymanov, S.; Ahmadov, F.; Ahmadov, G.; Abdullayev, K.; Akberov, R.; Heydarov, N.; Madatov, R.; Mukhtarov, R.; Nazarov, M.; Valiyev, R.

    2017-02-01

    This paper presents results of studies of the silicon based new micropixel avalanche phototransistor (MAPT). MAPT is a modification of well-known silicon photomultipliers (SiPMs) and differs since each photosensitive pixel of the MAPT operates in Geiger mode and comprises an individual micro-transistor operating in binary mode. This provides a high amplitude single photoelectron signal with significantly shorter rise time. The obtained results are compared with appropriate parameters of known SiPMs.

  20. Dealing with the white death: avalanche risk management for traffic routes.

    Science.gov (United States)

    Rheinberger, Christoph M; Bründl, Michael; Rhyner, Jakob

    2009-01-01

    This article discusses mitigation strategies to protect traffic routes from snow avalanches. Up to now, mitigation of snow avalanches on many roads and railways in the Alps has relied on avalanche sheds, which require large initial investments resulting in high opportunity costs. Therefore, avalanche risk managers have increasingly adopted organizational mitigation measures such as warning systems and closure policies instead. The effectiveness of these measures is, however, greatly dependent on human decisions. In this article, we present a method for optimizing avalanche mitigation for traffic routes in terms of both their risk reduction impact and their net benefit to society. First, we introduce a generic framework for assessing avalanche risk and for quantifying the impact of mitigation. This allows for sound cost-benefit comparisons between alternative mitigation strategies. Second, we illustrate the framework with a case study from Switzerland. Our findings suggest that site-specific characteristics of avalanche paths, as well as the economic importance of a traffic route, are decisive for the choice of optimal mitigation strategies. On routes endangered by few avalanche paths with frequent avalanche occurrences, structural measures are most efficient, whereas reliance on organizational mitigation is often the most appropriate strategy on routes endangered by many paths with infrequent or fuzzy avalanche risk. Finally, keeping a traffic route open may be very important for tourism or the transport industry. Hence, local economic value may promote the use of a hybrid strategy that combines organizational and structural measures to optimize the resource allocation of avalanche risk mitigation.

  1. Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

    Science.gov (United States)

    Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

    2016-09-27

    The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels.

  2. Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics

    Science.gov (United States)

    Durel, Jocelyn; Ferrotti, Thomas; Chantre, Alain; Cremer, Sébastien; Harduin, Julie; Bernabé, Stéphane; Kopp, Christophe; Boeuf, Frédéric; Ben Bakir, Badhise; Broquin, Jean-Emmanuel

    2016-02-01

    In this paper, the simulation, design and fabrication of a back-side coupling (BSC) concept for silicon photonics, which targets heterogeneous hybrid III-V/Si laser integration is presented. Though various demonstrations of a complete SOI integration of passive and active photonic devices have been made, they all feature multi-level planar metal interconnects, and a lack of integrated light sources. This is mainly due to the conflict between the need of planar surfaces for III-V/Si bonding and multiple levels of metallization. The proposed BSC solution to this topographical problem consists in fabricating lasers on the back-side of the Si waveguides using a new process sequence. The devices are based on a hybrid structure composed of an InGaAsP MQW active area and a Si-based DBR cavity. The emitted light wavelength is accordable within a range of 20 nm around 1.31μm thanks to thermal heaters and the laser output is fiber coupled through a Grating Coupler (GC). From a manufacturing point of view, the BSC approach provides not only the advantages of allowing the use of a thin-BOX SOI instead of a thick one; but it also shifts the laser processing steps and their materials unfriendly to CMOS process to the far back-end areas of fabrication lines. Moreover, aside from solving technological integration issues, the BSC concept offers several new design opportunities for active and passive devices (heat sink, Bragg gratings, grating couplers enhanced with integrated metallic mirrors, tapers…). These building boxes are explored here theoretically and experimentally.

  3. Hybrid lidar radar receiver for underwater imaging applications

    Science.gov (United States)

    Seetamraju, Madhavi; Gurjar, Rajan; Squillante, Michael; Derderian, Jeffrey P.

    2009-05-01

    In this work, we present research performed to improve the receiver characteristics for underwater imaging applications using the hybrid lidar-radar detection technique. We report the development of the next-generation coherent heterodyne receiver using modulation of the optical receiver's amplifier gain. Significant advantages in the receiver specifications are achieved using a large-area, high gain, low-noise silicon avalanche photodiode (APD) as the photodetector cum frequency mixer-demodulator. We demonstrate that heterodyne detection by gain modulation of APD can be used to increase the signal-to-noise ratio, detection sensitivity and bandwidth for the hybrid receiver system.

  4. Saturated logistic avalanche model

    Science.gov (United States)

    Aielli, G.; Camarri, P.; Cardarelli, R.; Di Ciaccio, A.; Liberti, B.; Paoloni, A.; Santonico, R.

    2003-08-01

    The search for an adequate avalanche RPC working model evidenced that the simple exponential growth can describe the electron multiplication phenomena in the gas with acceptable accuracy until the external electric field is not perturbed by the growing avalanche. We present here a model in which the saturated growth induced by the space charge effects is explained in a natural way by a constant coefficient non-linear differential equation, the Logistic equation, which was originally introduced to describe the evolution of a biological population in a limited resources environment. The RPCs, due to the uniform and intense field, proved to be an ideal device to test experimentally the presented model.

  5. Dune Avalanche Scars

    Science.gov (United States)

    2004-01-01

    05 August 2004 This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows large, low albedo (dark) sand dunes in Kaiser Crater near 47.2oS, 340.4oW. The dunes are--ever so slowly--moving east to west (right to left) as sand avalanches down the steeper, slip face slopes of each. Avalanching sand in the Kaiser dune field has left deep scars on these slopes, suggesting that the sand is not loose but is instead weakly cemented. The image covers an area approximately 3 km (1.9 mi) wide and is illuminated by sunlight from the upper left.

  6. A new Design for an High Gain Vacuum Photomultiplier: The Silicon PMT Used as Amplification Stage

    Energy Technology Data Exchange (ETDEWEB)

    Barbarino, Giancarlo [Universita di Napoli ' Federico II' , Dipartimento di Scienze fisiche, via Cintia 80126 Napoli (Italy); Asmundis, Riccardo de; De Rosa, Gianfranca [Istituto Nazionale di fisica Nucleare, sezione di Napoli, Complesso di Monte S. Angelo Ed. 6, via Cintia 80126 Napoli (Italy); Fiorillo, Giuliana; Russo, Stefano [Universita di Napoli ' Federico II' , Dipartimento di Scienze fisiche, via Cintia 80126 Napoli (Italy)

    2009-12-15

    Photons detection will continue to be a channel of great interest in the High Energy Physics and Astroparticle Physics fields for medium and big scale experiments in the next future. Thus, new solutions for photon detectors, that overcome the current limits of classical photomultipliers, are welcomed. We propose an innovative design for a hybrid, modern, high gain Vacuum Silicon Photomultiplier Tube (VSiPMT) which is boosted by the recent Geiger-mode avalanche silicon photodiode (G-APD) for which a massive production is today available.

  7. Porous silicon-cell penetrating peptide hybrid nanocarrier for intracellular delivery of oligonucleotides.

    Science.gov (United States)

    Rytkönen, Jussi; Arukuusk, Piret; Xu, Wujun; Kurrikoff, Kaido; Langel, Ulo; Lehto, Vesa-Pekka; Närvänen, Ale

    2014-02-01

    The largest obstacle to the use of oligonucleotides as therapeutic agents is the delivery of these large and negatively charged biomolecules through cell membranes into intracellular space. Mesoporous silicon (PSi) is widely recognized as a potential material for drug delivery purposes due to its several beneficial features like large surface area and pore volume, high loading capacity, biocompatibility, and biodegradability. In the present study, PSi nanoparticles stabilized by thermal oxidation or thermal carbonization and subsequently modified by grafting aminosilanes on the surface are utilized as an oligonucleotide carrier. Splice correcting oligonucleotides (SCOs), a model oligonucleotide drug, were loaded into the positively charged PSi nanoparticles with a loading degree as high as 14.3% (w/w). Rapid loading was achieved by electrostatic interactions, with the loading efficiencies reaching 100% within 5 min. The nanoparticles were shown to deliver and release SCOs, in its biologically active form, inside cells when formulated together with cell penetrating peptides (CPP). The biological effect was monitored with splice correction assay and confocal microscopy utilizing HeLa pLuc 705 cells. Furthermore, the use of PSi carrier platform in oligonucleotide delivery did not reduce the cell viability. Additionally, the SCO-CPP complexes formed in the pores of the carrier were stabilized against proteolytic digestion. The advantageous properties of protecting and releasing the cargo and the possibility to further functionalize the carrier surface make the hybrid nanoparticles a potential system for oligonucleotide delivery.

  8. Silicon spectral response extension through single wall carbon nanotubes in hybrid solar cells

    KAUST Repository

    Del Gobbo, Silvano

    2013-01-01

    Photovoltaic devices based on single wall carbon nanotubes (SWCNTs) and n-silicon multiple heterojunctions have been fabricated by a SWCNT film transferring process. We report on the ability of the carbon nanotubes to extend the Si spectral range towards the near ultraviolet (UV) and the near infrared regions. Semiconducting and about metallic SWCNT networks have been studied as a function of the film sheet resistance, Rsh. Optical absorbance and Raman spectroscopy have been used to assign nanotube chirality and electronic character. This gave us hints of evidence of the participation of the metal nanotubes in the photocurrent generation. Moreover, we provide evidence that the external quantum efficiency spectral range can be modulated as a function of the SWCNT network sheet resistance in a hybrid SWCNT/Si solar cell. This result will be very useful to further design/optimize devices with improved performance in spectral regions generally not covered by conventional Si p-n devices. © 2013 The Royal Society of Chemistry.

  9. 3D track reconstruction capability of a silicon hybrid active pixel detector

    Science.gov (United States)

    Bergmann, Benedikt; Pichotka, Martin; Pospisil, Stanislav; Vycpalek, Jiri; Burian, Petr; Broulim, Pavel; Jakubek, Jan

    2017-06-01

    Timepix3 detectors are the latest generation of hybrid active pixel detectors of the Medipix/Timepix family. Such detectors consist of an active sensor layer which is connected to the readout ASIC (application specific integrated circuit), segmenting the detector into a square matrix of 256 × 256 pixels (pixel pitch 55 μm). Particles interacting in the active sensor material create charge carriers, which drift towards the pixelated electrode, where they are collected. In each pixel, the time of the interaction (time resolution 1.56 ns) and the amount of created charge carriers are measured. Such a device was employed in an experiment in a 120 GeV/c pion beam. It is demonstrated, how the drift time information can be used for "4D" particle tracking, with the three spatial dimensions and the energy losses along the particle trajectory (dE/dx). Since the coordinates in the detector plane are given by the pixelation ( x, y), the x- and y-resolution is determined by the pixel pitch (55 μm). A z-resolution of 50.4 μm could be achieved (for a 500 μm thick silicon sensor at 130 V bias), whereby the drift time model independent z-resolution was found to be 28.5 μm.

  10. Photothermal and biodegradable polyaniline/porous silicon hybrid nanocomposites as drug carriers for combined chemo-photothermal therapy of cancer.

    Science.gov (United States)

    Xia, Bing; Wang, Bin; Shi, Jisen; Zhang, Yu; Zhang, Qi; Chen, Zhenyu; Li, Jiachen

    2017-03-15

    To develop photothermal and biodegradable nanocarriers for combined chemo-photothermal therapy of cancer, polyaniline/porous silicon hybrid nanocomposites had been successfully fabricated via surface initiated polymerization of aniline onto porous silicon nanoparticles in our experiments. As-prepared polyaniline/porous silicon nanocomposites could be well dispersed in aqueous solution without any extra hydrophilic surface coatings, and showed a robust photothermal effect under near-infrared (NIR) laser irradiation. Especially, after an intravenous injection into mice, these biodegradable porous silicon-based nanocomposites as non-toxic agents could be completely cleared in body. Moreover, these polyaniline/porous silicon nanocomposites as drug carriers also exhibited an efficient loading and dual pH/NIR light-triggered release of doxorubicin hydrochloride (DOX, a model anticancer drug). Most importantly, assisted with NIR laser irradiation, polyaniline/PSiNPs nanocomposites with loading DOX showed a remarkable synergistic anticancer effect combining chemotherapy with photothermal therapy, whether in vitro or in vivo. Therefore, based on biodegradable PSiNPs-based nanocomposites, this combination approach of chemo-photothermal therapy would have enormous potential on clinical cancer treatments in the future.

  11. Abelian avalanches and Tutte polynomials

    Science.gov (United States)

    Gabrielov, Andrei

    1993-04-01

    We introduce a class of deterministic lattice models of failure, Abelian avalanche (AA) models, with continuous phase variables, similar to discrete Abelian sandpile (ASP) models. We investigate analytically the structure of the phase space and statistical properties of avalanches in these models. We show that the distributions of avalanches in AA and ASP models with the same redistribution matrix and loading rate are identical. For an AA model on a graph, statistics of avalanches is linked to Tutte polynomials associated with this graph and its subgraphs. In the general case, statistics of avalanches is linked to an analog of a Tutte polynomial defined for any symmetric matrix.

  12. Reuyl Crater Dust Avalanches

    Science.gov (United States)

    2002-01-01

    (Released 13 May 2002) The Science The rugged, arcuate rim of the 90 km crater Reuyl dominates this THEMIS image. Reuyl crater is at the southern edge of a region known to be blanketed in thick dust based on its high albedo (brightness) and low thermal inertia values. This thick mantle of dust creates the appearance of snow covered mountains in the image. Like snow accumulation on Earth, Martian dust can become so thick that it eventually slides down the face of steep slopes, creating runaway avalanches of dust. In the center of this image about 1/3 of the way down is evidence of this phenomenon. A few dozen dark streaks can be seen on the bright, sunlit slopes of the crater rim. The narrow streaks extend downslope following the local topography in a manner very similar to snow avalanches on Earth. But unlike their terrestrial counterparts, no accumulation occurs at the bottom. The dust particles are so small that they are easily launched into the thin atmosphere where they remain suspended and ultimately blow away. The apparent darkness of the avalanche scars is due to the presence of relatively dark underlying material that becomes exposed following the passage of the avalanche. Over time, new dust deposition occurs, brightening the scars until they fade into the background. Although dark slope streaks had been observed in Viking mission images, a clear understanding of this dynamic phenomenon wasn't possible until the much higher resolution images from the Mars Global Surveyor MOC camera revealed the details. MOC images also showed that new avalanches have occurred during the time MGS has been in orbit. THEMIS images will allow additional mapping of their distribution and frequency, contributing new insights about Martian dust avalanches. The Story The stiff peaks in this image might remind you of the Alps here on Earth, but they really outline the choppy edge of a large Martian crater over 50 miles wide (seen in the context image at right). While these aren

  13. Hybrid integration of III-V and silicon materials and devices

    Science.gov (United States)

    Luo, Zhongsheng

    Laser liftoff (LLO) based hybrid integration techniques including the double-transfer process and the pixel-to-point transfer process have been developed to integrate III-V photonics with silicon materials and circuitry. No degradation in the device performance has been observed using the LLO based transfer techniques. On the contrary, performance improvements in both electrical characteristics and electroluminescence (EL) output have been found for the (In,Ga)N light emitting diodes (LEDs) transferred onto Si substrate. Based on computer simulation, it is found that as much as 70% enhancement in EL output could be expected by optimizing the metal layering on the backside of the transferred LEDs. In order to understand the existing experimental data and improve controllability and damage-free transfer yield of the LLO process, a novel, comprehensive LLO model based on thermal-mechanical analysis has been proposed and developed. The LLO model has been validated in the well-studied GaN/sapphire system. By employing the LLO based transfer technique, two optoelectronic systems have been designed and demonstrated. The first one is an integrated fluorescence microsystem, which involved the integration of Cd(S,Se) bandgap filters, (In,Ga)N LEDs, Poly(dimethylsiloxane) (PDMS) microfluidic channels with a pre-fabricated Si PIN photodiode chip. Prototypes with both one color (blue LED) excitation and two-color (blue and green LED) excitation have consistently demonstrated a detection capability of as low as 1 nM fluosphere beads using Molecular Probes FluoSpheresRTM dye. Furthermore, the feasibility of multi-wavelength design has been verified using the bi-wavelength prototype. To optimize signal-to-noise ratio and detection sensitivity of the microsystem via system design, an in-depth mathematic analysis has also been performed. The second application is a zero-footprint optical metrology wafer, which relies on the reflection at the optical detection window, through which

  14. Three-dimensional numerical analysis of hybrid heterojunction silicon wafer solar cells with heterojunction rear point contacts

    Directory of Open Access Journals (Sweden)

    Zhi Peng Ling

    2015-07-01

    Full Text Available This paper presents a three-dimensional numerical analysis of homojunction/heterojunction hybrid silicon wafer solar cells, featuring front-side full-area diffused homojunction contacts and rear-side heterojunction point contacts. Their device performance is compared with conventional full-area heterojunction solar cells as well as conventional diffused solar cells featuring locally diffused rear point contacts, for both front-emitter and rear-emitter configurations. A consistent set of simulation input parameters is obtained by calibrating the simulation program with intensity dependent lifetime measurements of the passivated regions and the contact regions of the various types of solar cells. We show that the best efficiency is obtained when a-Si:H is used for rear-side heterojunction point-contact formation. An optimization of the rear contact area fraction is required to balance between the gains in current and voltage and the loss in fill factor with shrinking rear contact area fraction. However, the corresponding optimal range for the rear-contact area fraction is found to be quite large (e.g. 20-60 % for hybrid front-emitter cells. Hybrid rear-emitter cells show a faster drop in the fill factor with decreasing rear contact area fraction compared to front-emitter cells, stemming from a higher series resistance contribution of the rear-side a-Si:H(p+ emitter compared to the rear-side a-Si:H(n+ back surface field layer. Overall, we show that hybrid silicon solar cells in a front-emitter configuration can outperform conventional heterojunction silicon solar cells as well as diffused solar cells with rear-side locally diffused point contacts.

  15. Hybrid charge division multiplexing method for silicon photomultiplier based PET detectors

    Science.gov (United States)

    Park, Haewook; Ko, Guen Bae; Lee, Jae Sung

    2017-06-01

    Silicon photomultiplier (SiPM) is widely utilized in various positron emission tomography (PET) detectors and systems. However, the individual recording of SiPM output signals is still challenging owing to the high granularity of the SiPM; thus, charge division multiplexing is commonly used in PET detectors. Resistive charge division method is well established for reducing the number of output channels in conventional multi-channel photosensors, but it degrades the timing performance of SiPM-based PET detectors by yielding a large resistor-capacitor (RC) constant. Capacitive charge division method, on the other hand, yields a small RC constant and provides a faster timing response than the resistive method, but it suffers from an output signal undershoot. Therefore, in this study, we propose a hybrid charge division method which can be implemented by cascading the parallel combination of a resistor and a capacitor throughout the multiplexing network. In order to compare the performance of the proposed method with the conventional methods, a 16-channel Hamamatsu SiPM (S11064-050P) was coupled with a 4  ×  4 LGSO crystal block (3  ×  3  ×  20 mm3) and a 9  ×  9 LYSO crystal block (1.2  ×  1.2  ×  10 mm3). In addition, we tested a time-over-threshold (TOT) readout using the digitized position signals to further demonstrate the feasibility of the time-based readout of multiplexed signals based on the proposed method. The results indicated that the proposed method exhibited good energy and timing performance, thus inheriting only the advantages of conventional resistive and capacitive methods. Moreover, the proposed method showed excellent pulse shape uniformity that does not depend on the position of the interacted crystal. Accordingly, we can conclude that the hybrid charge division method is useful for effectively reducing the number of output channels of the SiPM array.

  16. Influence of the polymer matrix on the efficiency of hybrid solar cells based on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ben Dkhil, S., E-mail: sadok.bendekhil@gmail.com [Laboratoire Physique des Materiaux: Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Ingenierie des Materiaux Polymeres: IMP, UMR CNRS 5223, Universite Claude Bernard Lyon 1, 15 boulevard Latarjet, 69622 Villeurbanne (France); Bourguiga, R. [Laboratoire Physique des Materiaux: Structures et Proprietes Groupe Physique des Composants et Dispositifs Nanometriques, 7021 Jarzouna, Bizerte (Tunisia); Davenas, J. [Ingenierie des Materiaux Polymeres: IMP, UMR CNRS 5223, Universite Claude Bernard Lyon 1, 15 boulevard Latarjet, 69622 Villeurbanne (France); Cornu, D. [Institut Europeen des Membranes, UMR CNRS 5635, Ecole Nationale superieure de Chimie, Universite de Montpellier, 1919 route de Mende, 34000 Montpellier (France)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Hybrid solar cells based on silicon nanowires have been fabricated. Black-Right-Pointing-Pointer The relation between the morphology of the composite thin films and the charge transfer between the polymer matrices and SiNWs has been examined. Black-Right-Pointing-Pointer We have investigated the effect of the polymer matrix on the photovoltaic characteristics. - Abstract: Poly (N-vinylcarbazole) (PVK):SiNWs and poly (2-methoxy, 5-(2-ethyl-hexyloxy)-p-phenyl vinylene) (MEH-PPV):SiNWs bulk-heterojunctions (BHJ) have been elaborated from blends of SiNWs and the polymer in solution from a common solvent. Optical properties of these nanocomposites have been investigated by UV-vis absorption and photoluminescence (PL) spectral measurements. We have studied the charge transfer between SiNWs and the two polymers using the photoluminescence quenching of PVK and MEH-PPV which is a convenient signature of the reduced radiative recombination of the generated charge pairs upon exciton dissociation. We found that PVK and SiNWs constitutes the better donor-acceptor system. In order to understand the difference between PVK:SiNWs or MEH-PPV:SiNWs behaviours, photoluminescence responses were correlated with the topography (SEM) of the thin films. The photovoltaic effect of ITO/PEDOT:PSS/SiNWs:PVK/Al and ITO/PEDOT:PSS/SiNWs:MEH-PPV/Al structures was studied by current-voltage (I-V) measurements in dark and under illumination and interpreted on the basis of the charge transfer differences resulting from the morphologies.

  17. Hybrid plasma bonding for void-free strong bonded interface of silicon/glass at 200 degrees C.

    Science.gov (United States)

    Howlader, M M R; Kibria, M G; Zhang, F; Kim, M J

    2010-07-15

    A novel hybrid plasma bonding (HPB) that combines sequential plasma activation (reactive ion etching followed by microwave radicals) with anodic bonding has been developed to achieve void-free and strong silicon/glass bonding at low temperature. The interfacial voids were observed at the silicon/glass interface both in the anodic bonding and in the plasma activated anodic bonding, but the voids were completely disappeared in the HPB method at 200 degrees C. The bonding strength of the silicon/glass in the HPB was as high as 30 MPa at 200 degrees C, which was higher than that in the individual treatment of anodic and plasma activated bonding methods. The improved characteristic behavior of the interface in the HPB is attributed to the higher hydrophilicity and smooth surfaces of silicon and glass after sequential plasma activation. These highly reactive and clean surfaces enhance the mobility of alkaline cations from the glass surface across the interface toward the bulk of glass in the HPB. This transportation resulted in a approximately 353 nm thick alkaline depletion layer in the glass and enlarged the amorphous SiO(2) across the interface. The void-free strong bonding is attributed to the clean hydrophilic surfaces and the amorphous SiO(2) layer across the interface. Copyright 2010 Elsevier B.V. All rights reserved.

  18. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    CERN Document Server

    Alemi, M; Gys, Thierry; Mikulec, B; Piedigrossi, D; Puertolas, D; Rosso, E; Schomaker, R; Snoeys, W; Wyllie, Ken H

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface...

  19. Statistical theory of hierarchical avalanche ensemble

    OpenAIRE

    Olemskoi, Alexander I.

    1999-01-01

    The statistical ensemble of avalanche intensities is considered to investigate diffusion in ultrametric space of hierarchically subordinated avalanches. The stationary intensity distribution and the steady-state current are obtained. The critical avalanche intensity needed to initiate the global avalanche formation is calculated depending on noise intensity. The large time asymptotic for the probability of the global avalanche appearance is derived.

  20. Subtractive Color Filters Based on a Silicon-Aluminum Hybrid-Nanodisk Metasurface Enabling Enhanced Color Purity

    Science.gov (United States)

    Yue, Wenjing; Gao, Song; Lee, Sang-Shin; Kim, Eun-Soo; Choi, Duk-Yong

    2016-07-01

    Highly efficient subtractive tri-color filters of cyan, magenta, and yellow with enhanced color purity and robustness have been proposed and realized, by exploiting a silicon-aluminum (Si-Al) hybrid-nanodisk (ND) metasurface atop a Si substrate. The aspect ratio of the Si-Al hybrid ND is much lower than that of the conventional Si nanowire, which is disadvantageous due to its fragility and low color purity. In response to incident light impinging upon the metasurface, the hybrid-NDs individually play the role in exciting a magnetic dipole (MD) resonance through the mediation of Mie-scattering between the hybrid ND and air. The light stored in the resonance is coupled to the substrate, giving rise to a suppressed reflection. By virtue of the top Al ND, the excited MD resonance is strongly confined by the Si ND. As a consequence, a near-zero resonant dip that exhibits high off-resonance reflection and narrow bandwidth is produced for embodying highly efficient tri-color filters with enhanced color purity. The spectral position can be tuned by a simple adjustment of the hybrid-ND diameter. A full-color palette was successfully created with a high color purity and large color gamut. The proposed devices may be applied for photorealistic high-resolution color printing and holographic displays.

  1. Hierarchically porous silicon-carbon-nitrogen hybrid materials towards highly efficient and selective adsorption of organic dyes.

    Science.gov (United States)

    Meng, Lala; Zhang, Xiaofei; Tang, Yusheng; Su, Kehe; Kong, Jie

    2015-01-21

    The hierarchically macro/micro-porous silicon-carbon-nitrogen (Si-C-N) hybrid material was presented with novel functionalities of totally selective and highly efficient adsorption for organic dyes. The hybrid material was conveniently generated by the pyrolysis of commercial polysilazane precursors using polydivinylbenzene microspheres as sacrificial templates. Owing to the Van der Waals force between sp-hybridized carbon domains and triphenyl structure of dyes, and electrostatic interaction between dyes and Si-C-N matrix, it exhibites high adsorption capacity and good regeneration and recycling ability for the dyes with triphenyl structure, such as methyl blue (MB), acid fuchsin (AF), basic fuchsin and malachite green. The adsorption process is determined by both surface adsorption and intraparticle diffusion. According to the Langmuir model, the adsorption capacity is 1327.7 mg·g(-1) and 1084.5 mg·g(-1) for MB and AF, respectively, which is much higher than that of many other adsorbents. On the contrary, the hybrid materials do not adsorb the dyes with azo benzene structures, such as methyl orange, methyl red and congro red. Thus, the hierarchically porous Si-C-N hybrid material from a facile and low cost polymer-derived strategy provides a new perspective and possesses a significant potential in the treatment of wastewater with complex organic pollutants.

  2. Hierarchically porous silicon-carbon-nitrogen hybrid materials towards highly efficient and selective adsorption of organic dyes

    Science.gov (United States)

    Meng, Lala; Zhang, Xiaofei; Tang, Yusheng; Su, Kehe; Kong, Jie

    2015-01-01

    The hierarchically macro/micro-porous silicon-carbon-nitrogen (Si-C-N) hybrid material was presented with novel functionalities of totally selective and highly efficient adsorption for organic dyes. The hybrid material was conveniently generated by the pyrolysis of commercial polysilazane precursors using polydivinylbenzene microspheres as sacrificial templates. Owing to the Van der Waals force between sp-hybridized carbon domains and triphenyl structure of dyes, and electrostatic interaction between dyes and Si-C-N matrix, it exhibites high adsorption capacity and good regeneration and recycling ability for the dyes with triphenyl structure, such as methyl blue (MB), acid fuchsin (AF), basic fuchsin and malachite green. The adsorption process is determined by both surface adsorption and intraparticle diffusion. According to the Langmuir model, the adsorption capacity is 1327.7 mg.g-1 and 1084.5 mg.g-1 for MB and AF, respectively, which is much higher than that of many other adsorbents. On the contrary, the hybrid materials do not adsorb the dyes with azo benzene structures, such as methyl orange, methyl red and congro red. Thus, the hierarchically porous Si-C-N hybrid material from a facile and low cost polymer-derived strategy provides a new perspective and possesses a significant potential in the treatment of wastewater with complex organic pollutants.

  3. AVALANCHES - EXTREME WINTER EVENTS. MONITORING AND AVALANCHE RISK

    Directory of Open Access Journals (Sweden)

    NARCISA MILIAN

    2012-03-01

    Full Text Available This paper presents the avalanches monitored by the National Meteorological Administration within the nivo-meteorological program since february 2004. Daily observations and weekly snow measurements are made at the weather stations from Bucegi Mountains - Vârful Omu (2504 m, Sinaia (1500 m şi Predeal (1100m and Făgăraş Mountains – Bâlea-Lac (2055m, to provide data for avalanche risk estimation using the european avalanche danger scale. Increasing winter sport activities had led to several avalanche accidents, some of them fatal.

  4. [Effects of exogenous silicon on the pollination and fertility characteristics of hybrid rice under heat stress during anthesis].

    Science.gov (United States)

    Wu, Chen-Yang; Chen, Dan; Luo, Hai-Wei; Yao, Yi-min; Wang, Zhi-Wei; Tsutomu, Matsui; Tian, Xiao-Hai

    2013-11-01

    Taking two medium-maturing indica rice hybrids Jinyou 63 and Shanyou 63 as test materials, this paper studied the effects of applying silicon fertilizer on the flag leaf chlorophyll content, photosynthetic properties, antioxidant enzyme activities, malondialdehyde (MDA) content, pollen vigor, anther acid invertase activity, pollination, and seed-setting of hybrid rice under the heat stress during anthesis. This study was conducted in pots and under growth chamber. Soluble solution of silicon fertilizer applied as Na2SiO3 x 9H2O was sprayed on the growing plants after early jointing stage, with three times successively and at an interval of one week. The pots were then moved into growth chamber to subject to normal temperature vs. high temperature (termed as heat stress) for five days. In treatment normal temperature, the average daily temperature was set at 26.6 degrees C, and the maximum daily temperature was set at 29.4 degres C; in treatment high temperature, the average and the maximum daily temperature were set at 33.2 degrees C and 40.1 degrees C, respectively. As compared with the control, applying silicon increased the flag leaf chlorophyll content significantly, improved the net photosynthetic rate and stomatal conductance, decreased the accumulative inter- cellular CO2 concentration, improved the leaf photosynthesis, reduced the MDA content, and improved the activities of SOD, POD and CAT under heat stress. In addition, applying silicon improved the anther acid invertase activity and the pollen vigor, increased the anther basal dehiscence width, total number of pollination per stigma, germinated number, germination rate of pollen, and percentage of florets with more than 10 germinated pollen grains, decreased the percentage of florets with fewer than 20 germinated pollen grains, and thus, alleviated the fertility loss of Jinyou 63 and Shanyou 63 under heat stress by 13.4% and 14.1%, respectively. It was suggested that spraying exogenous silicon in the

  5. On-Chip Integrated, Silicon–Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

    Science.gov (United States)

    2016-01-01

    We report an on-chip integrated metal graphene–silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal–silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics. PMID:27053042

  6. Design of a polymer-filled silicon nitride strip/slot asymmetric hybrid waveguide for realizing both flat dispersion and athermal operation.

    Science.gov (United States)

    Bian, Dandan; Chen, Shaowu; Lei, Xun; Qin, Guanshi; Chen, Zhanguo

    2016-06-20

    An asymmetric strip/slot hybrid silicon nitride waveguide is designed to simultaneously realize athermal operation and flat dispersion. The slot filling and upper cladding materials are negative thermal-optical coefficient (TOC), low refractive index polyurethane acrylate, while the left and right cladding layers are positive TOC, high refractive index silicon nitride. With suitable waveguide parameter selection, an optimum strip/slot hybrid silicon nitride waveguide exhibits an effective TOC of 1.263×10-7/K at 1550 nm, flattened dispersion in the wavelength range from 1200 to 1800 nm with the maximum dispersion of 30.51 ps/(nm·km), and a minimum of 10.89 ps/(nm·km). The proposed hybrid waveguide has great potential in building up broadband athermal microresonator optical frequency combs.

  7. Redox-active organometallics: magnetic and electronic couplings through carbon-silicon hybrid molecular connectors.

    Science.gov (United States)

    Hamon, Paul; Justaud, Frederic; Cador, Olivier; Hapiot, Philippe; Rigaut, Stéphane; Toupet, Loïc; Ouahab, Lahcène; Stueger, Harald; Hamon, Jean-René; Lapinte, Claude

    2008-12-24

    Treatment of the triflate complex Cp*(dppe)FeOTf [12; Cp* = eta(5)-C(5)(CH(3))(5), dppe = 1,2-bis(diphenylphosphino)ethane, OTf = CF(3)SO(3)] with an excess of HC[triple bond]C-(Si(CH(3))(2))(x)-C[triple bond]CH (x = 2-4) in diethyl ether provides the binuclear bis(vinylidene) derivatives [Cp*(dppe)Fe=C=CH(Si(CH(3))(2))(x)CH=C=Fe(dppe)Cp*][OTf](2) (x = 2, 13; x = 3, 14; x = 4, 15), which were isolated as ochre solids and rapidly characterized by FT-IR, (1)H, (31)P, and (13)C NMR spectroscopies. The complexes 13-15 were reacted with potassium tert-butoxide to afford the bis(alkynediyl) complexes [Cp*(dppe)Fe-C[triple bond]C(Si(CH(3))(2))(x)C[triple bond]C-Fe(dppe)Cp*] (x = 2, 1; x = 3, 2; x = 4, 3), which were isolated as orange powders in yields ranging from 76 to 91%. The IR, cyclic voltammetry, and UV-vis data obtained for 1-3 and the X-ray crystal structures determined for 1 and 3 reveal the importance of the sigma-pi conjugation (hyperconjugation) between the Si-Si sigma bond and the adjacent C[triple bond]C pi-symmetric orbitals in the description of the electronic structure of the ground state of these complexes. When reacted at low temperature with 2 equiv of [(C(5)H(5))(2)Fe]X or AgX [X = BPh(4), B(3,5-(CF(3))(2)C(6)H(3))(4))], compounds 1-3 provide 1[X](2), 2[X](2), and 3[X](2), which can be isolated and stored below -20 degrees C. EPR spectroscopy and magnetization measurements established that the superexchange interaction propagates through the Si-Si bonds (J = -0.97(2) cm(-1) for 3[X](2)). UV-vis-near-IR spectra were obtained with an optically transparent thin-layer electrosynthetic (OTTLE) cell for 1-3[OTf](n) (n = 0-2). A band with a maximum that increases from 6400 cm(-1) (1[OTf]) to 8500 cm(-1) (3[OTf]) observed for the mixed-valence species was ascribed to intervalence charge transfer evidencing photodriven electron transfer through the carbon-silicon hybrid connectors with H(ab) parameters ranging from 64 to 285 cm(-1).

  8. Metamaterials: A New Ba0.6 Sr0.4 TiO3 -Silicon Hybrid Metamaterial Device in Terahertz Regime (Small 19/2016).

    Science.gov (United States)

    Wu, Liang; Du, Ting; Xu, Ningning; Ding, Chunfeng; Li, Hui; Sheng, Quan; Liu, Ming; Yao, Jianquan; Wang, Zhiyong; Lou, Xiaojie; Zhang, Weili

    2016-05-01

    A giant terahertz modulation based on a Ba0.6 Sr0.4 TiO3 -silicon hybrid metamaterial is reported by L. Wu, W. Zhang, and co-workers on page 2610. The proposed nanoscale Ba0.6 Sr0.4 TiO3 (BST) hybrid metamaterial, delivering a transmission contrast of up to ≈79% due to electrically enabled carrier transport between the ferroelectric thin film and silicon substrate, is promising in developing high-performance real world photonic devices for terahertz technology.

  9. Hybrid matrices of TiO2 and TiO2–Ag nanofibers with silicone for high water flux photocatalytic degradation of dairy effluent

    DEFF Research Database (Denmark)

    Kanjwal, Muzafar Ahmad; Alm, Martin; Thomsen, Peter

    2016-01-01

    TiO2 and TiO2–Ag nanofibers were produced by electrospinning technique and surface coated on silicone elastomer (diameter: 10.0 mm; thickness: 2.0 mm) by dipcoating method. These coated hybrid nanoporous matrices were characterized by various morphological and physicochemical techniques (like SEM......, TEM, XRD, FTIR, EDS and UV). These characterizations reveal that the surface morphology of electrospun nanofibers remain intact by the dipcoating technique. The produced hybrid matrices of TiO2 and TiO2–Ag silicone were utilized as photocatalysts to degrade dairy waste water with an efficient water...

  10. Characteristics of avalanche accidents and a overview of avalanche equipment

    Directory of Open Access Journals (Sweden)

    Mateusz Biela

    2015-12-01

    Full Text Available Avalanches are one of the most spectacular phenomena which may occur in the mountains. Unfortunately they are often caused by humans and pose for him a big danger. In the Polish Tatras alone they represent 18% of all causes of death among 1996-2013. One fourth of the people caught by an avalanche dies, and their chances of survival depends on the depth of burial, burial time, the presence of an air pocket and the degree of injuries. The most common cause of death is asphyxiation, the next is injuries and hypothermia is the rarest cause of death. The fate of the buried people depends on their equipment such as avalanche transceiver, ABS backpack and AvaLung, and also from the equipment of the people who are seeking (avalanche probes, avalanche transceiver and shovels, which has been proven in practice and research.

  11. Solid-state flat panel imager with avalanche amorphous selenium

    Science.gov (United States)

    Scheuermann, James R.; Howansky, Adrian; Goldan, Amir H.; Tousignant, Olivier; Levéille, Sébastien; Tanioka, K.; Zhao, Wei

    2016-03-01

    Active matrix flat panel imagers (AMFPI) have become the dominant detector technology for digital radiography and fluoroscopy. For low dose imaging, electronic noise from the amorphous silicon thin film transistor (TFT) array degrades imaging performance. We have fabricated the first prototype solid-state AMFPI using a uniform layer of avalanche amorphous selenium (a-Se) photoconductor to amplify the signal to eliminate the effect of electronic noise. We have previously developed a large area solid-state avalanche a-Se sensor structure referred to as High Gain Avalanche Rushing Photoconductor (HARP) capable of achieving gains of 75. In this work we successfully deposited this HARP structure onto a 24 x 30 cm2 TFT array with a pixel pitch of 85 μm. An electric field (ESe) up to 105 Vμm-1 was applied across the a-Se layer without breakdown. Using the HARP layer as a direct detector, an X-ray avalanche gain of 15 +/- 3 was achieved at ESe = 105 Vμm-1. In indirect mode with a 150 μm thick structured CsI scintillator, an optical gain of 76 +/- 5 was measured at ESe = 105 Vμm-1. Image quality at low dose increases with the avalanche gain until the electronic noise is overcome at a constant exposure level of 0.76 mR. We demonstrate the success of a solid-state HARP X-ray imager as well as the largest active area HARP sensor to date.

  12. Broadband energy-efficient optical modulation by hybrid integration of silicon nanophotonics and organic electro-optic polymer

    CERN Document Server

    Zhang, Xingyu; Subbaraman, Harish; Luo, Jingdong; Jen, Alex K -Y; Chung, Chi-jui; Yan, Hai; Pan, Zeyu; Nelson, Robert L; Chen, Ray T

    2015-01-01

    Silicon-organic hybrid integrated devices have emerging applications ranging from high-speed optical interconnects to photonic electromagnetic-field sensors. Silicon slot photonic crystal waveguides (PCWs) filled with electro-optic (EO) polymers combine the slow-light effect in PCWs with the high polarizability of EO polymers, which promises the realization of high-performance optical modulators. In this paper, a broadband, power-efficient, low-dispersion, and compact optical modulator based on an EO polymer filled silicon slot PCW is presented. A small voltage-length product of V{\\pi}*L=0.282Vmm is achieved, corresponding to an unprecedented record-high effective in-device EO coefficient (r33) of 1230pm/V. Assisted by a backside gate voltage, the modulation response up to 50GHz is observed, with a 3-dB bandwidth of 15GHz, and the estimated energy consumption is 94.4fJ/bit at 10Gbit/s. Furthermore, lattice-shifted PCWs are utilized to enhance the optical bandwidth by a factor of ~10X over other modulators bas...

  13. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) proposes to manufacture new silicon carbide (SiC) foam-based optics that are composite, athermal and lightweight (FOCAL) that provide...

  14. Avalanches in UGe 2

    Science.gov (United States)

    Lhotel, E.; Paulsen, C.; Huxley, A. D.

    2004-05-01

    In UGe 2 ferromagnetism and superconductivity co-exist for pressures in the range 1.0- 1.6 GPa. The magnetic state, however, has several unusual properties. Here we report measurements of hysteresis loops for fields parallel to the easy-axis at low temperature and ambient pressure, measured for two separate UGe 2 single crystals. Steps in the magnetization as the field is changed at low temperature are observed for both crystals. The general phenomenology associated with the steps strongly suggests that they correspond to avalanches of domain-wall motion.

  15. Integrated avalanche photodiode arrays

    Science.gov (United States)

    Harmon, Eric S.

    2015-07-07

    The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

  16. Improving the organic/Si heterojunction hybrid solar cell property by optimizing PEDOT:PSS film and with amorphous silicon as back surface field

    Science.gov (United States)

    Wen, Hongbin; Cai, Hongkun; Du, Yangyang; Dai, Xiaowan; Sun, Yun; Ni, Jian; Li, Juan; Zhang, Dexian; Zhang, Jianjun

    2017-01-01

    Organic/Si hybrid heterojunction hybrid solar cells have got a great progress. The hybrid device may be promising in terms of reducing cost due to its simple technological process. It is crucial for high efficiency solar cells to form better coating films on the Si substrate. Here, the performance of organic/Si heterojunction hybrid solar cells is obviously enhanced by adding surfactant (FS300) into poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) film and the device with amorphous silicon as back surface field is successfully fabricated. The proper amount of surfactant addition improves the uniformity and homogeneous of the polymer film that can be reflected by scanning electron microscope and atomic force microscope, which allows good contact on the texture-Si substrate resulting in excellent device property. Also, the power conversion efficiency of cells is boosted to 9.37 from 7.31% displayed a 28% enhancement by embedding amorphous silicon thin film layer at rear interface as holes blocking layer. The insertion layer of amorphous silicon enhances the extraction of photon-generated carrier and suppresses the recombination of hole-electron at the rear cathode. Which results all improvement in the short-circuit current density, the open-circuit voltage and the fill factor. By optimizing the polymer film property and inserting the hole blocking layer, the performance of hybrid Si/organic hybrid solar cells is greatly improved.

  17. Automated characterization of single-photon avalanche photodiode

    CERN Document Server

    Ghazali, Aina M M; Sauge, Sebastien; Makarov, Vadim

    2012-01-01

    We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 uW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer.

  18. Avalanche photodiodes and quenching circuits for single-photon detection.

    Science.gov (United States)

    Cova, S; Ghioni, M; Lacaita, A; Samori, C; Zappa, F

    1996-04-20

    Avalanche photodiodes, which operate above the breakdown voltage in Geiger mode connected with avalanche-quenching circuits, can be used to detect single photons and are therefore called singlephoton avalanche diodes SPAD's. Circuit configurations suitable for this operation mode are critically analyzed and their relative merits in photon counting and timing applications are assessed. Simple passive-quenching circuits (PQC's), which are useful for SPAD device testing and selection, have fairly limited application. Suitably designed active-quenching circuits (AQC's) make it possible to exploit the best performance of SPAD's. Thick silicon SPAD's that operate at high voltages (250-450 V) have photon detection efficiency higher than 50% from 540- to 850-nm wavelength and still ~3% at 1064 nm. Thin silicon SPAD's that operate at low voltages (10-50 V) have 45% efficiency at 500 nm, declining to 10% at 830 nm and to as little as 0.1% at 1064 nm. The time resolution achieved in photon timing is 20 ps FWHM with thin SPAD's; it ranges from 350 to 150 ps FWHM with thick SPAD's. The achieved minimum counting dead time and maximum counting rate are 40 ns and 10 Mcps with thick silicon SPAD's, 10 ns and 40 Mcps with thin SPAD's. Germanium and III-V compound semiconductor SPAD's extend the range of photon-counting techniques in the near-infrared region to at least 1600-nm wavelength.

  19. Avalanche photodiodes and quenching circuits for single-photon detection

    Science.gov (United States)

    Cova, S.; Ghioni, M.; Lacaita, A.; Samori, C.; Zappa, F.

    1996-04-01

    Avalanche photodiodes, which operate above the breakdown voltage in Geiger mode connected with avalanche-quenching circuits, can be used to detect single photons and are therefore called single-photon avalanche diodes SPAD's. Circuit configurations suitable for this operation mode are critically analyzed and their relative merits in photon counting and timing applications are assessed. Simple passive-quenching circuits (PQC's), which are useful for SPAD device testing and selection, have fairly limited application. Suitably designed active-quenching circuits (AQC's) make it possible to exploit the best performance of SPAD's. Thick silicon SPAD's that operate at high voltages (250-450 V) have photon detection efficiency higher than 50% from 540-to 850-nm wavelength and still approximately 3% at 1064 nm. Thin silicon SPAD's that operate at low voltages (10-50 V) have 45% efficiency at 500 nm, declining to 10% at 830 nm and to as little as 0.1% at 1064 nm. The time resolution achieved in photon timing is 20 ps FWHM with thin SPAD's; it ranges from 350 to 150 ps FWHM with thick SPAD's. The achieved minimum counting dead time and maximum counting rate are 40 ns and 10 Mcps with thick silicon SPAD's, 10 ns and 40 Mcps with thin SPAD's. Germanium and III-V compound semiconductor SPAD's extend the range of photon-counting techniques in the near-infrared region to at least 1600-nm wavelength.

  20. Towards the hybrid organic semiconductor fet (hosfet) : electrical and electrochemical characterization of functionalized and unfunctionalized, covalently bound organic monolayers on silicon surfaces

    NARCIS (Netherlands)

    Faber, Erik Jouwert

    2006-01-01

    Since their introduction in 1993 the class of covalently bound organic monolayers on oxide free silicon surfaces have found their way to multiple application fields such as passivation layers in solar cells, masking layers in lithographic processing, insulating films in hybrid moleculesilicon electr

  1. Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...... by doping the hybrid film with Au nanoparticles, and the power conversion efficiency can be increased to 8.8%. The fabrication processes are simple, low cost and fit for scaling. The results demonstrate that planar transparent hybrid of GPs/SCNTs/n-Si heterojunction is efficient for solar energy conversion...

  2. 40 GHz electro-optic modulation in hybrid silicon-organic slotted photonic crystal waveguides.

    Science.gov (United States)

    Wülbern, Jan Hendrik; Prorok, Stefan; Hampe, Jan; Petrov, Alexander; Eich, Manfred; Luo, Jingdong; Jen, Alex K-Y; Jenett, Martin; Jacob, Arne

    2010-08-15

    In this Letter we demonstrate broadband electro-optic modulation with frequencies of up to 40 GHz in slotted photonic crystal waveguides based on silicon-on-insulator substrates covered and infiltrated with a nonlinear optical polymer. Two-dimensional photonic crystal waveguides in silicon enable integrated optical devices with an extremely small geometric footprint on the scale of micrometers. The slotted waveguide design optimizes the overlap of the optical and electric fields in the second-order nonlinear optical medium and, hence, the interaction of the optical and electric waves.

  3. Technological advances in avalanche survival.

    Science.gov (United States)

    Radwin, Martin I; Grissom, Colin K

    2002-01-01

    Over the last decade, a proliferation of interest has emerged in the area of avalanche survival, yielding both an improved understanding of the pathophysiology of death after avalanche burial and technological advances in the development of survival equipment. The dismal survival statistics born out of the modern era of winter recreation unmistakably reveal that elapsed time and depth of burial are the most critical variables of survival and the focus of newer survival devices on the market. Although blunt trauma may kill up to one third of avalanche victims, early asphyxiation is the predominant mechanism of death, and hypothermia is rare. A survival plateau or delay in asphyxiation may be seen in those buried in respiratory communication with an air pocket until a critical accumulation of CO2 or an ice lens develops. The newest survival devices available for adjunctive protection, along with a transceiver and shovel, are the artificial air pocket device (AvaLung), the avalanche air bag system (ABS), and the Avalanche Ball. The artificial air pocket prolongs adequate respiration during snow burial and may improve survival by delaying asphyxiation. The ABS, which forces the wearer to the surface of the avalanche debris by inverse segregation to help prevent burial, has been in use in Europe for the last 10 years with an impressive track record. Finally, the Avalanche Ball is a visual locator device in the form of a spring-loaded ball attached to a tether, which is released from a fanny pack by a rip cord. Despite the excitement surrounding these novel technologies, avalanche avoidance through knowledge and conservative judgment will always be the mainstay of avalanche survival, never to be replaced by any device.

  4. Enhanced UV photoresponse of KrF-laser-synthesized single-wall carbon nanotubes/n-silicon hybrid photovoltaic devices.

    Science.gov (United States)

    Le Borgne, V; Gautier, L A; Castrucci, P; Del Gobbo, S; De Crescenzi, M; El Khakani, M A

    2012-06-01

    We report on the KrF-laser ablation synthesis, purification and photocurrent generation properties of single-wall carbon nanotubes (SWCNTs). The thermally purified SWCNTs are integrated into hybrid photovoltaic (PV) devices by spin-coating them onto n-Si substrates. These novel SWCNTs/n-Si hybrid devices are shown to generate significant photocurrent (PC) over the entire 250-1050 nm light spectrum with external quantum efficiencies (EQE) reaching up to ~23%. Our SWCNTs/n-Si hybrid devices are not only photoactive in the traditional spectral range of Si solar cells, but generate also significant PC in the UV domain (below 400 nm). This wider spectral response is believed to be the result of PC generation from both the SWCNTs themselves and the tremendous number of local p-n junctions created at the nanotubes/Si interface. To assess the prevalence of these two contributions, the EQE spectra and J-V characteristics of these hybrid devices were investigated in both planar and top-down configurations, as a function of SWCNTs' film thickness. A sizable increase in EQE in the near UV with respect to the silicon is observed in both configurations, with a more pronounced UV photoresponse in the planar mode, confirming thereby the role of SWCNTs in the photogeneration process. The PC generation is found to reach its maximum for an optimal the SWCNT film thickness, which is shown to correspond to the best trade-off between lowest electrical resistance and highest optical transparency. Finally, by analyzing the J-V characteristics of our SWCNTs/n-Si devices with an equivalent circuit model, we were able to point out the contribution of the various electrical components involved in the photogeneration process. The SWCNTs-based devices demonstrated here open up the prospect for their use in highly effective photovoltaics and/or UV-light sensors.

  5. Neuronal avalanches and learning

    Energy Technology Data Exchange (ETDEWEB)

    Arcangelis, Lucilla de, E-mail: dearcangelis@na.infn.it [Department of Information Engineering and CNISM, Second University of Naples, 81031 Aversa (Italy)

    2011-05-01

    Networks of living neurons represent one of the most fascinating systems of biology. If the physical and chemical mechanisms at the basis of the functioning of a single neuron are quite well understood, the collective behaviour of a system of many neurons is an extremely intriguing subject. Crucial ingredient of this complex behaviour is the plasticity property of the network, namely the capacity to adapt and evolve depending on the level of activity. This plastic ability is believed, nowadays, to be at the basis of learning and memory in real brains. Spontaneous neuronal activity has recently shown features in common to other complex systems. Experimental data have, in fact, shown that electrical information propagates in a cortex slice via an avalanche mode. These avalanches are characterized by a power law distribution for the size and duration, features found in other problems in the context of the physics of complex systems and successful models have been developed to describe their behaviour. In this contribution we discuss a statistical mechanical model for the complex activity in a neuronal network. The model implements the main physiological properties of living neurons and is able to reproduce recent experimental results. Then, we discuss the learning abilities of this neuronal network. Learning occurs via plastic adaptation of synaptic strengths by a non-uniform negative feedback mechanism. The system is able to learn all the tested rules, in particular the exclusive OR (XOR) and a random rule with three inputs. The learning dynamics exhibits universal features as function of the strength of plastic adaptation. Any rule could be learned provided that the plastic adaptation is sufficiently slow.

  6. Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

    Energy Technology Data Exchange (ETDEWEB)

    Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

    1989-05-01

    Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs.

  7. Wear Characteristics of Hybrid Composites Based on Za27 Alloy Reinforced With Silicon Carbide and Graphite Particles

    Directory of Open Access Journals (Sweden)

    S. Mitrović

    2014-06-01

    Full Text Available The paper presents the wear characteristics of a hybrid composite based on zinc-aluminium ZA27 alloy, reinforced with silicon-carbide and graphite particles. The tested sample contains 5 vol.% of SiC and 3 vol.% Gr particles. Compocasting technique has been used to prepare the samples. The experiments were performed on a “block-on-disc” tribometer under conditions of dry sliding. The wear volumes of the alloy and the composite were determined by varying the normal loads and sliding speeds. The paper contains the procedure for preparation of sample composites and microstructure of the composite material and the base ZA27 alloy. The wear surface of the composite material was examined using the scanning electronic microscope (SEM and energy dispersive spectrometry (EDS. Conclusions were obtained based on the observed impact of the sliding speed, normal load and sliding distance on tribological behaviour of the observed composite.

  8. Heterogeneous oligonucleotide-hybridization assay based on hot electron-induced electrochemiluminescence of a rhodamine label at oxide-coated aluminum and silicon electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Spehar-Deleze, Anna-Maria [Laboratory of Sensors, Actuators and Microsystems, Institute of Microtechnology, University of Neuchatel, Rue Jaquet-Droz 1, CH-2007 Neuchatel (Switzerland) and Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, Kemistintie 1, FIN-02015 HUT (Finland)]. E-mail: anna-maria.spehar@unine.ch; Suomi, Johanna [Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, Kemistintie 1, FIN-02015 HUT (Finland); Jiang Qinghong [Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, Kemistintie 1, FIN-02015 HUT (Finland); Rooij, Nico de [Laboratory of Sensors, Actuators and Microsystems, Institute of Microtechnology, University of Neuchatel, Rue Jaquet-Droz 1, CH-2007 Neuchatel (Switzerland); Koudelka-Hep, Milena [Laboratory of Sensors, Actuators and Microsystems, Institute of Microtechnology, University of Neuchatel, Rue Jaquet-Droz 1, CH-2007 Neuchatel (Switzerland); Kulmala, Sakari [Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, Kemistintie 1, FIN-02015 HUT (Finland)

    2006-07-28

    This paper describes a heterogeneous oligonucleotide-hybridization assay based on hot electron-induced electrochemiluminescence (HECL) of a rhodamine label. Thin oxide-film coated aluminum and silicon electrodes were modified with an aminosilane layer and derivatized with short, 15-mer oligonucleotides via diisothiocyanate coupling. Target oligonucleotides were conjugated with tetramethylrhodamine (TAMRA) dye at their amino modified 5' end and hybridization was detected using HECL of TAMRA. Preliminary results indicate sensitivity down to picomolar level and low nonspecific adsorption. The sensitivity was better on oxide-coated silicon compared to oxide-coated aluminum electrodes and two-base pair mismatched hybrids were successfully discriminated. The experimental results presented here might be useful for the design of disposable electrochemiluminescent DNA biosensors.

  9. Fe{sub 3}O{sub 4}/carbon coated silicon ternary hybrid composite as supercapacitor electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Ilgeun; Kim, Myeongjin; Kim, Jooheon, E-mail: jooheonkim@cau.ac.kr

    2015-02-15

    Highlights: • Silicon was covered with carbon by thermal vapor deposition. • Carbon layer prevent exposure of silicon to reactive electrolyte. • Fe{sub 3}O{sub 4} contents in the composites optimized for electrochemical performance. • Fe{sub 3}O{sub 4}/carbon coated Si exhibits higher electrochemical performance than raw Si. - Abstract: In this study, Fe{sub 3}O{sub 4}/carbon-coated Si ternary hybrid composites were fabricated. A carbon layer was directly formed on the surface of Si by the thermal vapor deposition. The carbon-coating layer not only prevented the contact between Si and reactive electrolyte but also provided anchoring sites for the deposition of Fe{sub 3}O{sub 4}. Fe{sub 3}O{sub 4} nanoparticles were deposited on the surface of carbon-coated Si by the hydrazine reducing method. The morphology and structure of Fe{sub 3}O{sub 4} and carbon layer were characterized via X-ray diffractometry, field emission scanning electron microscopy, field emission transmission electron microscopy, X-ray photoelectron spectroscopy, and thermogravimetric analyses. These characterizations indicate that a carbon layer was fully coated on the Si particles, and Fe{sub 3}O{sub 4} particles were homogeneously deposited on the carbon-coated Si particles. The Fe{sub 3}O{sub 4}/carbon-coated Si electrode exhibited enhanced electrochemical performance, attributed to the high conductivity and stability of carbon layer and pseudocapacitive reaction of Fe{sub 3}O{sub 4}. The proposed ternary-hybrid composites may be potentially useful for the fabrication of high-performance electrodes.

  10. Characterizing microscale aluminum composite layer properties on silicon solar cells with hybrid 3D scanning force measurements

    Science.gov (United States)

    Bae, Sung-Kuk; Choi, Beomjoon; Chung, Haseung; Shin, Seungwon; Song, Hee-Eun; Seo, Jung Hwan

    2016-03-01

    This article presents a novel technique to estimate the mechanical properties of the aluminum composite layer on silicon solar cells by using a hybrid 3-dimensional laser scanning force measurement (3-D LSFM) system. The 3-D LSFM system measures the material properties of sub-layers constituting a solar cell. This measurement is critical for realizing high-efficient ultra-thin solar cells. The screen-printed aluminum layer, which significantly affects the bowing phenomenon, is separated from the complete solar cell by removing the silicon (Si) layer with deep reactive ion etching. An elastic modulus of ~15.1 GPa and a yield strength of ~35.0 MPa for the aluminum (Al) composite layer were obtained by the 3-D LSFM system. In experiments performed for 6-inch Si solar cells, the bowing distances decreased from 12.02 to 1.18 mm while the Si layer thicknesses increased from 90 to 190 μm. These results are in excellent agreement with the theoretical predictions for ultra-thin Si thickness (90 μm) based on the obtained Al composite layer properties.

  11. Isolation and Expression Analysis of Novel Silicon Absorption Gene from Roots of Mangrove (Rhizophora apiculata via Suppression Subtractive Hybridization

    Directory of Open Access Journals (Sweden)

    Mahbod Sahebi

    2014-01-01

    Full Text Available Silicon (Si is the second most abundant element in soil after oxygen. It is not an essential element for plant growth and formation but plays an important role in increasing plant tolerance towards different kinds of abiotic and biotic stresses. The molecular mechanism of Si absorption and accumulation may differ between plants, such as monocotyledons and dicotyledons. Silicon absorption and accumulation in mangrove plants are affected indirectly by some proteins rich in serine and proline amino acids. The expression level of the genes responsible for Si absorption varies in different parts of plants. In this study, Si is mainly observed in the epidermal roots’ cell walls of mangrove plants compared to other parts. The present work was carried out to discover further information on Si stress responsive genes in Rhizophora apiculata, using the suppression subtractive hybridization technique. To construct the cDNA library, two-month-old seedlings were exposed to 0.5, 1, and 1.5 mM SiO2 for 15 hrs and for 1 to 6 days resulting in a total of 360 high quality ESTs gained. Further examination by RT-PCR and real-time qRT-PCR showed the expression of a candidate gene of serine-rich protein.

  12. Isolation and expression analysis of novel silicon absorption gene from roots of mangrove (Rhizophora apiculata) via suppression subtractive hybridization.

    Science.gov (United States)

    Sahebi, Mahbod; Hanafi, Mohamed M; Abdullah, Siti Nor Akmar; Rafii, Mohd Y; Azizi, Parisa; Nejat, Naghmeh; Idris, Abu Seman

    2014-01-01

    Silicon (Si) is the second most abundant element in soil after oxygen. It is not an essential element for plant growth and formation but plays an important role in increasing plant tolerance towards different kinds of abiotic and biotic stresses. The molecular mechanism of Si absorption and accumulation may differ between plants, such as monocotyledons and dicotyledons. Silicon absorption and accumulation in mangrove plants are affected indirectly by some proteins rich in serine and proline amino acids. The expression level of the genes responsible for Si absorption varies in different parts of plants. In this study, Si is mainly observed in the epidermal roots' cell walls of mangrove plants compared to other parts. The present work was carried out to discover further information on Si stress responsive genes in Rhizophora apiculata, using the suppression subtractive hybridization technique. To construct the cDNA library, two-month-old seedlings were exposed to 0.5, 1, and 1.5 mM SiO2 for 15 hrs and for 1 to 6 days resulting in a total of 360 high quality ESTs gained. Further examination by RT-PCR and real-time qRT-PCR showed the expression of a candidate gene of serine-rich protein.

  13. Characterizing microscale aluminum composite layer properties on silicon solar cells with hybrid 3D scanning force measurements.

    Science.gov (United States)

    Bae, Sung-Kuk; Choi, Beomjoon; Chung, Haseung; Shin, Seungwon; Song, Hee-eun; Seo, Jung Hwan

    2016-03-07

    This article presents a novel technique to estimate the mechanical properties of the aluminum composite layer on silicon solar cells by using a hybrid 3-dimensional laser scanning force measurement (3-D LSFM) system. The 3-D LSFM system measures the material properties of sub-layers constituting a solar cell. This measurement is critical for realizing high-efficient ultra-thin solar cells. The screen-printed aluminum layer, which significantly affects the bowing phenomenon, is separated from the complete solar cell by removing the silicon (Si) layer with deep reactive ion etching. An elastic modulus of ~15.1 GPa and a yield strength of ~35.0 MPa for the aluminum (Al) composite layer were obtained by the 3-D LSFM system. In experiments performed for 6-inch Si solar cells, the bowing distances decreased from 12.02 to 1.18 mm while the Si layer thicknesses increased from 90 to 190 μm. These results are in excellent agreement with the theoretical predictions for ultra-thin Si thickness (90 μm) based on the obtained Al composite layer properties.

  14. Imaging findings of avalanche victims

    Energy Technology Data Exchange (ETDEWEB)

    Grosse, Alexandra B.; Grosse, Claudia A.; Anderson, Suzanne [University Hospital of Berne, Inselspital, Department of Diagnostic, Pediatric and Interventional Radiology, Berne (Switzerland); Steinbach, Lynne S. [University of California San Francisco, Department of Radiology, San Francisco, CA (United States); Zimmermann, Heinz [University Hospital of Berne, Inselspital, Department of Trauma and Emergency Medicine, Berne (Switzerland)

    2007-06-15

    Skiing and hiking outside the boundaries remains an attractive wilderness activity despite the danger of avalanches. Avalanches occur on a relatively frequent basis and may be devastating. Musculoskeletal radiologists should be acquainted with these injuries. Fourteen avalanche victims (11 men and 3 women; age range 17-59 years, mean age 37.4 years) were air transported to a high-grade trauma centre over a period of 2 years. Radiographs, CT and MR images were prospectively evaluated by two observers in consensus. Musculoskeletal findings (61%) were more frequent than extraskeletal findings (39%). Fractures were most commonly seen (36.6%), involving the spine (14.6%) more frequently than the extremities (9.8%). Blunt abdominal and thoracic trauma were the most frequent extraskeletal findings. A wide spectrum of injuries can be found in avalanche victims, ranging from extremity fractures to massive polytrauma. Asphyxia remains the main cause of death along with hypoxic brain injury and hypothermia. (orig.)

  15. Nanopillar Optical Antenna Avalanche Detectors

    Science.gov (United States)

    2014-08-30

    68 , (11), 10. 51. Adachi, S., Properties of aluminium gallium ...bandwidth products > 100 GHz. 2 UNIVERSITY OF CALIFORNIA Los Angeles Nanopillar Optical Antenna Avalanche Detectors A dissertation... products > 100 GHz. 6 iii The dissertation of Pradeep

  16. Hybrid vertical cavity laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide.......A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide....

  17. NATO Advanced Research Workshop on Environmental and Biological Risks of Hybrid Organic-Silicon Nanodevices

    CERN Document Server

    Kozyrev, Sergey; Vaseashta, Ashok

    2009-01-01

    Even though there is no generally accepted definition of nanotechnologies to be defined as distinct discipline there is an emerging consensus that their advent and development is a growing in importance factor of the contemporary and future technological civilization. One of these most fundamental issues we are confronted with is the compatibility with life itself. From single cell organisms to humans, carbon is a key building block of all molecular structures of life. In contrast the man created electronic industry to build on other elements, of which silicon is the most common. Both carbon and silicon create molecular chains, although different in their internal structure. All life is built from carbon-based chains. As long as the man built technological products do not directly interfere with the physiology of life the associated risks from them are relatively easy to identify. They are primarily in the environmental pollution and the possibility of upsetting the natural balance of biocoenosis, on a planet...

  18. Optical detection of PNA/DNA hybridization in resonant porous silicon-based devices

    Science.gov (United States)

    Rotiroti, Lucia; Arcari, Paolo; Lamberti, Annalisa; Sanges, Carmen; De Tommasi, Edoardo; Rea, Ilaria; Rendina, Ivo; De Stefano, Luca

    2008-04-01

    The development of label-free optical biosensors could have a great impact on life sciences as well as on screening techniques for medical and environmental applications. Peptide nucleic acid (PNA) is a nucleic acid analog in which the sugar phosphate backbone of natural nucleic acid has been replaced by a synthetic peptide backbone, resulting in an achiral and uncharged mimic. Due to the uncharged nature of PNA, PNA-DNA duplexes show a better thermal stability respect the DNA-DNA equivalents. In this work, we used an optical biosensor, based on the porous silicon (PSi) nanotechnology, to detect PNA-DNA interactions. PSi optical sensors are based on changes of reflectivity spectrum when they are exposed to the target analytes. The porous silicon surface was chemically modified to covalently link the PNA which acts as a very specific probe for its ligand (cDNA).

  19. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Science.gov (United States)

    Tune, Daniel D.; Shapter, Joseph G.

    2013-01-01

    The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs) on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  20. Thermo-mechanical characterization of siliconized E-glass fiber/hematite particles reinforced epoxy resin hybrid composite

    Science.gov (United States)

    V. R., Arun prakash; Rajadurai, A.

    2016-10-01

    In this present work hybrid polymer (epoxy) matrix composite has been strengthened with surface modified E-glass fiber and iron(III) oxide particles with varying size. The particle sizes of 200 nm and surface modification process has been done on both fiber and filler by an amino functional silane 3-Aminopropyltrimethoxysilane (APTMS). Crystalline and functional groups of siliconized iron(III) oxide particles were characterized by XRD and FTIR spectroscopy analysis. Fixed quantity of surface treated 15 vol% E-glass fiber was laid along with 0.5 and 1.0 vol% of iron(III) oxide particles into the matrix to fabricate hybrid composites. The composites were cured by an aliphatic hardener Triethylenetetramine (TETA). Effectiveness of surface modified particles and fibers addition into the resin matrix were revealed by mechanical testing like tensile testing, flexural testing, impact testing, inter laminar shear strength and hardness. Thermal behavior of composites was evaluated by TGA, DSC and thermal conductivity (Lee's disc). The scanning electron microscopy was employed to found shape and size of iron(III) oxide particles adhesion quality of fiber with epoxy matrix. Good dispersion of fillers in matrix was achieved with surface modifier APTMS. Tensile, flexural, impact and inter laminar shear strength of composites was improved by reinforcing surface modified fiber and filler. Thermal stability of epoxy resin was improved when surface modified fiber was reinforced along with hard hematite particles. Thermal conductivity of epoxy increased with increase of hematite content in epoxy matrix.

  1. Reducing the thermal stress in a heterogeneous material stack for large-area hybrid optical silicon-lithium niobate waveguide micro-chips

    Science.gov (United States)

    Weigel, P. O.; Mookherjea, S.

    2017-04-01

    The bonding of silicon-on-insulator (SOI) to lithium niobate-on-insulator (LNOI) is becoming important for a new category of linear and nonlinear micro-photonic optical devices. In studying the bonding of SOI to LNOI through benzocyclobutene (BCB), a popular interlayer bonding dielectric used in hybrid silicon photonic devices, we use thermal stress calculations to suggest that BCB thickness does not affect thermal stress in this type of structure, and instead, thermal stress can be mitigated satisfactorily by matching the handles of the SOI and LNOI. We bond LNOI with a silicon handle to a silicon chip, remove the handle on the LNOI side, and thermally cycle the bonded stack repeatedly from room temperature up to 300°C and back down without incurring thermal stress cracks, which do appear when using LNOI with a lithium niobate handle, regardless of the BCB thickness. We show that this process can be used to create many hybrid silicon-lithium niobate waveguiding structures on a single patterned SOI chip bonded to a large-area (16 mm × 4.2 mm) lithium niobate film.

  2. Porous silicon-VO{sub 2} based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

    Energy Technology Data Exchange (ETDEWEB)

    Antunez, E. E.; Salazar-Kuri, U.; Estevez, J. O.; Basurto, M. A.; Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, Instituto de Investigación en Ciencias Básicas y Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Mor. 62209 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Mor. 62580 (Mexico); Jiménez Sandoval, S. [Laboratorio de Investigación en Materiales, Centro de Investigación y estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, Qro. 76001 (Mexico)

    2015-10-07

    Morphological properties of thermochromic VO{sub 2}—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO{sub 2} as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO{sub 2}(M) to a high-temperature tetragonal rutile VO{sub 2}(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching with temperature. As compared to VO{sub 2} film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology.

  3. Amorphous silicon carbon films prepared by hybrid plasma enhanced chemical vapor/sputtering deposition system: Effects of r.f. power

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Nur Maisarah Abdul, E-mail: nurmaisarahrashid@gmail.com [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ritikos, Richard; Othman, Maisara; Khanis, Noor Hamizah; Gani, Siti Meriam Ab. [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Muhamad, Muhamad Rasat [Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Rahman, Saadah Abdul, E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2013-02-01

    Silicon carbon films were deposited using a hybrid radio frequency (r.f.) plasma enhanced chemical vapor deposition (PECVD)/sputtering deposition system at different r.f. powers. This deposition system combines the advantages of r.f. PECVD and sputtering techniques for the deposition of silicon carbon films with the added advantage of eliminating the use of highly toxic silane gas in the deposition process. Silicon (Si) atoms were sputtered from a pure amorphous silicon (a-Si) target by argon (Ar) ions and carbon (C) atoms were incorporated into the film from C based growth radicals generated through the discharge of methane (CH{sub 4}) gas. The effects of r.f. powers of 60, 80, 100, 120 and 150 W applied during the deposition process on the structural and optical properties of the films were investigated. Raman spectroscopic studies showed that the silicon carbon films contain amorphous silicon carbide (SiC) and amorphous carbon (a-C) phases. The r.f. power showed significant influence on the C incorporation in the film structure. The a-C phases became more ordered in films with high C incorporation in the film structure. These films also produced high photoluminescence emission intensity at around 600 nm wavelength as a result of quantum confinement effects from the presence of sp{sup 2} C clusters embedded in the a-SiC and a-C phases in the films. - Highlights: ► Effects of radio frequency (r.f.) power on silicon carbon (SiC) films were studied. ► Hybrid plasma enhanced chemical vapor deposition/sputtering technique was used. ► r.f. power influences C incorporation in the film structure. ► High C incorporation results in higher ordering of the amorphous C phase. ► These films produced high photoluminescence emission intensity.

  4. Avalanche effects near nanojunctions

    Science.gov (United States)

    Nandigana, Vishal V. R.; Aluru, N. R.

    2016-07-01

    In this article, we perform a computational investigation of a nanopore connected to external fluidic reservoirs of asymmetric geometries. The asymmetry between the reservoirs is achieved by changing the cross-sectional areas, and the reservoirs are designated as the micropore reservoir and macropore reservoir. When an electric field is applied, which is directed from the macropore towards the micropore reservoir, we observe local nonequilibrium chaotic current oscillations. The current oscillations originate at the micropore-nanopore interface owing to the local cascade of ions; we refer to this phenomenon as the "avalanche effects." We mathematically quantify chaos in terms of the maximum Lyapunov exponent. The maximum Lyapunov exponent exhibits a monotonic increase with the applied voltage and the macropore reservoir diameter. The temporal power spectra maps of the chaotic currents depict a low-frequency "1 /f "-type dynamics for the voltage chaos and "1 /f2 "-type dynamics for the macropore reservoir chaos. The results presented here offer avenues to manipulate ionic diodes and fluidic pumps.

  5. Ultraviolet avalanche photodiodes

    Science.gov (United States)

    McClintock, Ryan; Razeghi, Manijeh

    2015-08-01

    The III-Nitride material system is rapidly maturing; having proved itself as a material for LEDs and laser, and now finding use in the area of UV photodetectors. However, many UV applications are still dominated by the use of photomultiplier tubes (PMT). PMTs are capable of obtaining very high sensitivity using internal electron multiplication gain (typically ~106). It is highly desirable to develop a compact semiconductor-based photodetector capable of realizing this level of sensitivity. In principle, this can be obtained in III-Nitrides by taking advantage of avalanche multiplication under high electric fields - typically 2.7 MV/cm, which with proper design can correspond to an external reverse bias of less than 100 volts. In this talk, we review the current state-of-the-art in III-Nitride solar- and visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.

  6. Automated Characterization of Single-Photon Avalanche Photodiode

    Directory of Open Access Journals (Sweden)

    Aina Mardhiyah M. Ghazali

    2012-01-01

    Full Text Available We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH. The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW, dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer. ABSTRAK: Kami melaporkan pencirian pengesan foton tunggal secara automatik berdasarkan kepada diod foto runtuhan silikon (silicon avalanche photodiode (PerkinElmer C30902SH komersial. Pencirian  diod foto adalah berdasarkan kepada plot arus-voltan (I-V pada tahap pencahayaan yang berbeza (kelam - tanpa cahaya, 10pW, dan 10µW, kadar bacaan latar belakang, kecekapan pengesanan foton pada voltan picuan yang berbeza. Pengaturcaraan C++ digunakan di dalam rutin pencirian automatik melalui komputer dengan sistem pengendalian LINUX.KEYWORDS: avalanche photodiode (APD; single photon detector; photon counting; experiment automation

  7. Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology

    Science.gov (United States)

    Bashouti, Muhammad Y.; Sardashti, Kasra; Schmitt, Sebastian W.; Pietsch, Matthias; Ristein, Jürgen; Haick, Hossam; Christiansen, Silke H.

    2013-02-01

    The ability to control physical properties of silicon nanowires (Si NWs) by designing their surface bonds is important for their applicability in devices in the areas of nano-electronics, nano-photonics, including photovoltaics and sensing. In principle a wealth of different molecules can be attached to the bare Si NW surface atoms to create e.g. Si-O, Si-C, Si-N, etc. to mention just the most prominent ones. Si-O bond formation, i.e. oxidation usually takes place automatically as soon as Si NWs are exposed to ambient conditions and this is undesired is since a defective oxide layer (i.e. native silicon dioxide - SiO2) can cause uncontrolled trap states in the band gap of silicon. Surface functionalization of Si NW surfaces with the aim to avoid oxidation can be carried out by permitting e.g. Si-C bond formation when alkyl chains are covalently attached to the Si NW surfaces by employing a versatile two-step chlorination/alkylation process that does not affect the original length and diameter of the NWs. Termination of Si NWs with alkyl molecules through covalent Si-C bonds can provide long term stability against oxidation of the Si NW surfaces. The alkyl chain length determines the molecular coverage of Si NW surfaces and thus the surface energy and next to simple Si-C bonds even bond types such as Cdbnd C and Ctbnd C can be realized. When integrating differently functionalized Si NWs in functional devices such as field effect transistors (FETs) and solar cells, the physical properties of the resultant devices vary.

  8. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Daniel D. Tune

    2013-12-01

    Full Text Available The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  9. Improved Work Function of Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonic acid) and its Effect on Hybrid Silicon/Organic Heterojunction Solar Cells.

    Science.gov (United States)

    Shen, Xiaojuan; Chen, Ling; Pan, Jianmei; Hu, Yue; Li, Songjun; Zhao, Jie

    2016-12-01

    Hybrid silicon/organic solar cells have been recently extensively investigated due to their simple structure and low-cost fabrication process. However, the efficiency of the solar cells is greatly limited by the barrier height as well as the carrier recombination at the silicon/organic interface. In this work, hydrochloroplatinic acid (H2PtCl6) is employed into the poly(3,4-ethlenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solution, and the work function (WF) of the PEDOT:PSS layer has been successfully improved. Based on the Pt-modified PEDOT:PSS layer, the efficiency of the silicon/PEDOT:PSS cell can be increased to 11.46%, corresponding to ~20% enhancement to the one without platinum (Pt) modification. Theoretical and experimental results show that, when increasing the WF of the PEDO:PSS layer, the barrier height between the silicon/PEDOT:PSS interface can be effectively enhanced. Meanwhile, the carrier recombination at the interface is significantly reduced. These results can contribute to better understanding of the interfacial mechanism of silicon/PEDOT:PSS interface, and further improving the device performance of silicon/organic solar cells.

  10. Improved Work Function of Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonic acid) and its Effect on Hybrid Silicon/Organic Heterojunction Solar Cells

    Science.gov (United States)

    Shen, Xiaojuan; Chen, Ling; Pan, Jianmei; Hu, Yue; Li, Songjun; Zhao, Jie

    2016-11-01

    Hybrid silicon/organic solar cells have been recently extensively investigated due to their simple structure and low-cost fabrication process. However, the efficiency of the solar cells is greatly limited by the barrier height as well as the carrier recombination at the silicon/organic interface. In this work, hydrochloroplatinic acid (H2PtCl6) is employed into the poly(3,4-ethlenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solution, and the work function (WF) of the PEDOT:PSS layer has been successfully improved. Based on the Pt-modified PEDOT:PSS layer, the efficiency of the silicon/PEDOT:PSS cell can be increased to 11.46%, corresponding to 20% enhancement to the one without platinum (Pt) modification. Theoretical and experimental results show that, when increasing the WF of the PEDO:PSS layer, the barrier height between the silicon/PEDOT:PSS interface can be effectively enhanced. Meanwhile, the carrier recombination at the interface is significantly reduced. These results can contribute to better understanding of the interfacial mechanism of silicon/PEDOT:PSS interface, and further improving the device performance of silicon/organic solar cells.

  11. Avalanche risk assessment in Russia

    Science.gov (United States)

    Komarov, Anton; Seliverstov, Yury; Sokratov, Sergey; Glazovskaya, Tatiana; Turchaniniva, Alla

    2017-04-01

    The avalanche prone area covers about 3 million square kilometers or 18% of total area of Russia and pose a significant problem in most mountain regions of the country. The constant growth of economic activity, especially in the North Caucasus region and therefore the increased avalanche hazard lead to the demand of the large-scale avalanche risk assessment methods development. Such methods are needed for the determination of appropriate avalanche protection measures as well as for economic assessments during all stages of spatial planning of the territory. The requirement of natural hazard risk assessments is determined by the Federal Law of Russian Federation. However, Russian Guidelines (SP 11-103-97; SP 47.13330.2012) are not clearly presented concerning avalanche risk assessment calculations. A great size of Russia territory, vast diversity of natural conditions and large variations in type and level of economic development of different regions cause significant variations in avalanche risk values. At the first stage of research the small scale avalanche risk assessment was performed in order to identify the most common patterns of risk situations and to calculate full social risk and individual risk. The full social avalanche risk for the territory of country was estimated at 91 victims. The area of territory with individual risk values lesser then 1×10(-6) covers more than 92 % of mountain areas of the country. Within these territories the safety of population can be achieved mainly by organizational activities. Approximately 7% of mountain areas have 1×10(-6) - 1×10(-4) individual risk values and require specific mitigation measures to protect people and infrastructure. Territories with individual risk values 1×10(-4) and above covers about 0,1 % of the territory and include the most severe and hazardous mountain areas. The whole specter of mitigation measures is required in order to minimize risk. The future development of such areas is not recommended

  12. Complementary Metal-Oxide-Silicon (CMOS)-Memristor Hybrid Nanoelectronics for Advanced Encryption Standard (AES) Encryption

    Science.gov (United States)

    2016-04-01

    Encryption Standard (AES). This new hybrid CMOS/memristor technology will be available for future novel, emerging unconventional architecture with size...new encryption paradigms by changing the algorithm and building blocks that can fundamentally improve AES architecture and implementation. Thus, the...compatible HfO2 tool. Because of this, we have collaborated with Canon-Anelva ( Japan ), to deposit 15 nm of HfO2 on our M1 wafers by reactive sputtering. After

  13. Progress report on the use of hybrid silicon pin diode arrays in high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Shapiro, S.L. (Stanford Linear Accelerator Center, Menlo Park, CA (USA)); Jernigan, J.G.; Arens, J.F. (California Univ., Berkeley, CA (USA). Space Sciences Lab.)

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump-bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format has 10 {times} 64 pixels, each 120 {mu}m square; and the other format has 256 {times} 156 pixels, each 30 {mu}m square. In both cases, the thickness of the PIN diode layer is 300 {mu}m. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 17 figs.

  14. Investigation of organic semiconductor interlayers in hybrid PEDOT:PSS/silicon solar cells

    Science.gov (United States)

    Weingarten, Martin; Zweipfennig, Thorsten; Sanders, Simon; Stümmler, Dominik; Pfeiffer, Pascal; Vescan, Andrei; Kalisch, Holger

    2016-10-01

    In the last years, hybrid organic/inorganic solar cells have attracted great interest in photovoltaic research due to their expected potential to combine the advantages of both material classes, the excellent electrical properties and stability of the inorganic and the low-cost processability of the organic semiconductors. This work is focused on hybrid solar cells based on n-doped crystalline Si as the inorganic and the polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as the organic part of the device. The hole-conducting organic semiconductors poly(3-hexylthiophene-2,5-diyl) (P3HT) and 2,2‧,7,7‧-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9‧-spirobifluorene (Spiro-MeOTAD) are investigated as electron blocking interlayers to reduce the parasitic electron current into the metal top contact and thereby increase the efficiency of the solar cell. In this context, P3HT is identified to be insufficient as an interlayer material due to unfavorable hysteresis effects. On the other hand, for solar cells with a Spiro-MeOTAD interlayer, the power conversion efficiency (PCE) is significantly increased. This is mainly attributed to an increased short-circuit current density. For the best performing device, a PCE of 14.3% is achieved, which is one of the highest values reported for this type of hybrid solar cells so far.

  15. Microstructure and Mechanical Behaviour of Stir-Cast Al-Mg-Sl Alloy Matrix Hybrid Composite Reinforced with Corn Cob Ash and Silicon Carbide

    Directory of Open Access Journals (Sweden)

    Oluwagbenga Babajide Fatile

    2014-10-01

    Full Text Available In this present study, the microstructural and mechanical behaviour of Al-Mg-Si alloy matrix composites reinforced with silicon carbide (SiC and Corn cob ash (An agro‑waste was investigated. This research work was aimed at assessing the suitability of developing low cost- high performance Al-Mg-Si hybrid composite. Silicon carbide (SiC particulates added with 0,1,2,3 and 4 wt% Corn cob ash (CCA were utilized to prepare 10 wt% of the reinforcing phase with Al-Mg-Si alloy as matrix using two-step stir casting method. Microstructural characterization, density measurement, estimated percent porosity, tensile testing, and micro‑hardness measurement were used to characterize the composites produced. From the results obtained, CCA has great potential to serve as a complementing reinforcement for the development of low cost‑high performance aluminum hybrid composites.

  16. High-optical-quality blends of anionic polymethine salts and polycarbonate with enhanced third-order non-linearities for silicon-organic hybrid devices.

    Science.gov (United States)

    Li, Zhong'an; Liu, Yang; Kim, Hyeongeu; Hales, Joel M; Jang, Sei-Hum; Luo, Jingdong; Baehr-Jones, Tom; Hochberg, Michael; Marder, Seth R; Perry, Joseph W; Jen, Alex K-Y

    2012-11-20

    A series of anionic polymethine dyes with different aromatic counterions are prepared to improve their compatibility as guests in an amorphous polycarbonate host. When they are used as the cladding material for silicon hybrid slot waveguides, four-wave mixing wavelength conversion and two-photon absorption-based optical-power modulation are observed. Such guest-host materials may be attractive candidates for all-optical signal-processing applications.

  17. Observations and modelling of snow avalanche entrainment

    OpenAIRE

    2002-01-01

    In this paper full scale avalanche dynamics measurements from the Italian Pizzac and Swiss Vallée de la Sionne test sites are used to develop a snowcover entrainment model. A detailed analysis of three avalanche events shows that snowcover entrainment at the avalanche front appears to dominate over bed erosion at the basal sliding surface. Furthermore, the distribution of mass within the avalanche body is primarily a function of basal fric...

  18. Correlations in avalanche critical points

    Science.gov (United States)

    Cerruti, Benedetta; Vives, Eduard

    2009-07-01

    Avalanche dynamics and related power-law statistics are ubiquitous in nature, arising in phenomena such as earthquakes, forest fires, and solar flares. Very interestingly, an analogous behavior is associated with many condensed-matter systems, such as ferromagnets and martensites. Bearing it in mind, we study the prototypical random-field Ising model at T=0 . We find a finite correlation between waiting intervals and the previous avalanche size. This correlation is not found in other models for avalanches but it is experimentally found in earthquakes and in forest fires. Our study suggests that this effect occurs in critical points that are at the end of a first-order discontinuity separating two regimes: one with high activity from another with low activity.

  19. 10.5% efficient polymer and amorphous silicon hybrid tandem photovoltaic cell.

    Science.gov (United States)

    Kim, Jeehwan; Hong, Ziruo; Li, Gang; Song, Tze-bin; Chey, Jay; Lee, Yun Seog; You, Jingbi; Chen, Chun-Chao; Sadana, Devendra K; Yang, Yang

    2015-03-04

    Thin-film solar cells made with amorphous silicon (a-Si:H) or organic semiconductors are considered as promising renewable energy sources due to their low manufacturing cost and light weight. However, the efficiency of single-junction a-Si:H or organic solar cells is typically photovoltaic cell by employing an a-Si:H film as a front sub-cell and a low band gap polymer:fullerene blend film as a back cell on planar glass substrates. Monolithic integration of 6.0% efficienct a-Si:H and 7.5% efficient polymer:fullerene blend solar cells results in a power conversion efficiency of 10.5%. Such high-efficiency thin-film tandem cells can be achieved by optical management and interface engineering of fully optimized high-performance front and back cells without sacrificing photovoltaic performance in both cells.

  20. 10.5% efficient polymer and amorphous silicon hybrid tandem photovoltaic cell

    Science.gov (United States)

    Kim, Jeehwan; Hong, Ziruo; Li, Gang; Song, Tze-Bin; Chey, Jay; Lee, Yun Seog; You, Jingbi; Chen, Chun-Chao; Sadana, Devendra K.; Yang, Yang

    2015-03-01

    Thin-film solar cells made with amorphous silicon (a-Si:H) or organic semiconductors are considered as promising renewable energy sources due to their low manufacturing cost and light weight. However, the efficiency of single-junction a-Si:H or organic solar cells is typically photovoltaic cell by employing an a-Si:H film as a front sub-cell and a low band gap polymer:fullerene blend film as a back cell on planar glass substrates. Monolithic integration of 6.0% efficienct a-Si:H and 7.5% efficient polymer:fullerene blend solar cells results in a power conversion efficiency of 10.5%. Such high-efficiency thin-film tandem cells can be achieved by optical management and interface engineering of fully optimized high-performance front and back cells without sacrificing photovoltaic performance in both cells.

  1. Hybrid graphene/silicon integrated optical isolators with photonic spin-orbit interaction

    CERN Document Server

    Ma, Jingwen; Yu, Zejie; Sun, Xiankai

    2016-01-01

    Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spin exhibit different response to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 um. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light to monolithic integration of nonrecipro...

  2. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    Science.gov (United States)

    Aull, Brian

    2016-04-08

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  3. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    Directory of Open Access Journals (Sweden)

    Brian Aull

    2016-04-01

    Full Text Available This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  4. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    OpenAIRE

    Brian Aull

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  5. Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology

    NARCIS (Netherlands)

    Lee, M.J.; Sun, P.; Charbon, E.

    2015-01-01

    We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several

  6. Graphene oxide-Ag nanoparticles-pyramidal silicon hybrid system for homogeneous, long-term stable and sensitive SERS activity

    Science.gov (United States)

    Guo, Jia; Xu, Shicai; Liu, Xiaoyun; Li, Zhe; Hu, Litao; Li, Zhen; Chen, Peixi; Ma, Yong; Jiang, Shouzhen; Ning, Tingyin

    2017-02-01

    In our work, few layers graphene oxide (GO) were directly synthesized on Ag nanoparticles (AgNPs) by spin-coating method to fabricate a GO-AgNPs hybrid structure on a pyramidal silicon (PSi) substrate for surface-enhanced Raman scattering (SERS). The GO-AgNPs-PSi substrate showed excellent Raman enhancement effect, the minimum detected concentration for Rhodamine 6G (R6G) can reach 10-12 M, which is one order of magnitude lower than the AgNPs-PSi substrate and two order of magnitude lower than the GO-AgNPs-flat-Si substrate. The linear fit calibration curve with error bars is presented and the value of R2 of 612 and 773 cm-1 can reach 0.986 and 0.980, respectively. The excellent linear response between the Raman intensity and R6G concentrations prove that the prepared GO-AgNPs-PSi substrates can serve as good SERS substrate for molecule detection. The maximum deviations of SERS intensities from 20 positions of the GO-AgNPs-PSi substrate are less than 8%, revealing the high homogeneity of the SERS substrate. The excellent homogeneity of the enhanced Raman signals can be attributed to well-separated pyramid arrays of PSi, the uniform morphology of AgNPs and multi-functions of GO layer. Besides, the uniform GO film can effectively protect AgNPs from oxidation and endow the hybrid system a good stability and long lifetime. This GO-AgNPs-PSi substrate may provide a new way toward practical applications for the ultrasensitive and label-free SERS detection in areas of medicine, food safety and biotechnology.

  7. Thermo-mechanical characterization of siliconized E-glass fiber/hematite particles reinforced epoxy resin hybrid composite

    Energy Technology Data Exchange (ETDEWEB)

    Arun Prakash, V.R., E-mail: vinprakash101@gmail.com; Rajadurai, A., E-mail: rajadurai@annauniv.edu.in

    2016-10-30

    Highlights: • Particles dimension have reduced using Ball milling process. • Importance of surface modification was explored. • Surface modification has been done to improve adhesion of fiber/particles with epoxy. • Mechanical properties has been increased by adding modified fiber and particles. • Thermal properties have been increased. - Abstract: In this present work hybrid polymer (epoxy) matrix composite has been strengthened with surface modified E-glass fiber and iron(III) oxide particles with varying size. The particle sizes of 200 nm and <100 nm has been prepared by high energy ball milling and sol-gel methods respectively. To enhance better dispersion of particles and improve adhesion of fibers and fillers with epoxy matrix surface modification process has been done on both fiber and filler by an amino functional silane 3-Aminopropyltrimethoxysilane (APTMS). Crystalline and functional groups of siliconized iron(III) oxide particles were characterized by XRD and FTIR spectroscopy analysis. Fixed quantity of surface treated 15 vol% E-glass fiber was laid along with 0.5 and 1.0 vol% of iron(III) oxide particles into the matrix to fabricate hybrid composites. The composites were cured by an aliphatic hardener Triethylenetetramine (TETA). Effectiveness of surface modified particles and fibers addition into the resin matrix were revealed by mechanical testing like tensile testing, flexural testing, impact testing, inter laminar shear strength and hardness. Thermal behavior of composites was evaluated by TGA, DSC and thermal conductivity (Lee’s disc). The scanning electron microscopy was employed to found shape and size of iron(III) oxide particles adhesion quality of fiber with epoxy matrix. Good dispersion of fillers in matrix was achieved with surface modifier APTMS. Tensile, flexural, impact and inter laminar shear strength of composites was improved by reinforcing surface modified fiber and filler. Thermal stability of epoxy resin was improved

  8. Epitaxial silicon semiconductor detectors, past developments, future prospects

    Energy Technology Data Exchange (ETDEWEB)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized.

  9. Epitaxial silicon semiconductor detectors: past developments, future prospects

    Energy Technology Data Exchange (ETDEWEB)

    Gruhn, C.R.

    1977-02-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized.

  10. Fe3O4/carbon coated silicon ternary hybrid composite as supercapacitor electrodes

    Science.gov (United States)

    Oh, Ilgeun; Kim, Myeongjin; Kim, Jooheon

    2015-02-01

    In this study, Fe3O4/carbon-coated Si ternary hybrid composites were fabricated. A carbon layer was directly formed on the surface of Si by the thermal vapor deposition. The carbon-coating layer not only prevented the contact between Si and reactive electrolyte but also provided anchoring sites for the deposition of Fe3O4. Fe3O4 nanoparticles were deposited on the surface of carbon-coated Si by the hydrazine reducing method. The morphology and structure of Fe3O4 and carbon layer were characterized via X-ray diffractometry, field emission scanning electron microscopy, field emission transmission electron microscopy, X-ray photoelectron spectroscopy, and thermogravimetric analyses. These characterizations indicate that a carbon layer was fully coated on the Si particles, and Fe3O4 particles were homogeneously deposited on the carbon-coated Si particles. The Fe3O4/carbon-coated Si electrode exhibited enhanced electrochemical performance, attributed to the high conductivity and stability of carbon layer and pseudocapacitive reaction of Fe3O4. The proposed ternary-hybrid composites may be potentially useful for the fabrication of high-performance electrodes.

  11. Polymer Nanodot-Hybridized Alkyl Silicon Oxide Nanostructures for Organic Memory Transistors with Outstanding High-Temperature Operation Stability

    Science.gov (United States)

    Lee, Chulyeon; Seo, Jooyeok; Kim, Jeongnam; Jeong, Jaehoon; Han, Hyemi; Kim, Hwajeong; Kim, Youngkyoo

    2016-01-01

    Organic memory devices (OMDs) are becoming more important as a core component in flexible electronics era because of their huge potentials for ultrathin, lightweight and flexible plastic memory modules. In particular, transistor-type OMDs (TOMDs) have been gradually spotlighted due to their structural advantages possessing both memory and driving functions in single devices. Although a variety of TOMDs have been developed by introducing various materials, less attention has been paid to the stable operation at high temperatures. Here we demonstrate that the polymer nanodot-embedded alkyl silicon oxide (ASiO) hybrid materials, which are prepared by sol-gel and thermal cross-linking reactions between poly(4-vinylphenol) (PVP) and vinyltriethoxysilane, can deliver low-voltage (1~5 V) TOMDs with outstanding operation stability (>4700 cycles) at high temperatures (150 °C). The efficient low-voltage memory function is enabled by the embedded PVP nanodots with particular lattice nanostructures, while the high thermal stability is achieved by the cross-linked ASiO network structures. PMID:27703187

  12. Polymer Nanodot-Hybridized Alkyl Silicon Oxide Nanostructures for Organic Memory Transistors with Outstanding High-Temperature Operation Stability

    Science.gov (United States)

    Lee, Chulyeon; Seo, Jooyeok; Kim, Jeongnam; Jeong, Jaehoon; Han, Hyemi; Kim, Hwajeong; Kim, Youngkyoo

    2016-10-01

    Organic memory devices (OMDs) are becoming more important as a core component in flexible electronics era because of their huge potentials for ultrathin, lightweight and flexible plastic memory modules. In particular, transistor-type OMDs (TOMDs) have been gradually spotlighted due to their structural advantages possessing both memory and driving functions in single devices. Although a variety of TOMDs have been developed by introducing various materials, less attention has been paid to the stable operation at high temperatures. Here we demonstrate that the polymer nanodot-embedded alkyl silicon oxide (ASiO) hybrid materials, which are prepared by sol-gel and thermal cross-linking reactions between poly(4-vinylphenol) (PVP) and vinyltriethoxysilane, can deliver low-voltage (1~5 V) TOMDs with outstanding operation stability (>4700 cycles) at high temperatures (150 °C). The efficient low-voltage memory function is enabled by the embedded PVP nanodots with particular lattice nanostructures, while the high thermal stability is achieved by the cross-linked ASiO network structures.

  13. Optical data exchange of m-QAM signals using a silicon-organic hybrid slot waveguide: proposal and simulation.

    Science.gov (United States)

    Gui, Chengcheng; Wang, Jian

    2014-10-01

    We present modulation-format-transparent data exchange for m-ary quadrature amplitude modulation (m-QAM) signals using a single silicon-organic hybrid slot waveguide which offers tight light confinement and enhanced nonlinearity. By exploiting the parametric depletion effect of non-degenerate four-wave mixing (ND-FWM) process in the slot waveguide, we simulate low-power (waveguide length is studied, showing an optimized waveguide length of ~17 mm. For a given waveguide length of 17 mm, the SNR penalty of data exchange, at a BER of 2e-3, is kept below 4 dB when varying input pump power from 8.4 to 9.8 mW for 2.56 Tbit/s 16-QAM and from 8.9 to 9.2 mW for 3.84 Tbit/s 64-QAM. In addition, data exchange running at low speed (e.g. 20 Gbaud) and data exchange taking into account waveguide propagation loss are also analyzed with favorable operation performance.

  14. Fabrication of Silicon Nitride Ion Sensitive Field-Effect Transistor for pH Measurement and DNA Immobilization/Hybridization

    Directory of Open Access Journals (Sweden)

    U. Hashim

    2013-01-01

    Full Text Available The fabrication of ion sensitive field-effect transistor (ISFET using silicon nitride (Si3N4 as the sensing membrane for pH measurement and DNA is reported. For the pH measurement, the Ag/AgCl electrode was used as the reference electrode, and different pH values of buffer solution were used in the ISFET analysis. The ISFET device was tested with pH buffer solutions of pH2, pH3, pH7, pH8, and pH9. The results show that the IV characteristic of ISFET devices is directly proportional and the device’s sensitivity was 43.13 mV/pH. The ISFET is modified chemically to allow the integration with biological element to form a biologically active field-effect transistor (BIOFET. It was found that the DNA immobilization activities which occurred on the sensing membrane caused the drain current to drop due to the negatively charged backbones of the DNA probes repelled electrons from accumulating at the conducting channel. The drain current was further decreased when the DNA hybridization took place.

  15. NOTE: First images of a digital autoradiography system based on a Medipix2 hybrid silicon pixel detector

    Science.gov (United States)

    Mettivier, Giovanni; Montesi, Maria Cristina; Russo, Paolo

    2003-06-01

    We present the first images of beta autoradiography obtained with the high-resolution hybrid pixel detector consisting of the Medipix2 single photon counting read-out chip bump-bonded to a 300 µm thick silicon pixel detector. This room temperature system has 256 × 256 square pixels of 55 µm pitch (total sensitive area of 14 × 14 mm2), with a double threshold discriminator and a 13-bit counter in each pixel. It is read out via a dedicated electronic interface and control software, also developed in the framework of the European Medipix2 Collaboration. Digital beta autoradiograms of 14C microscale standard strips (containing separate bands of increasing specific activity in the range 0.0038-32.9 kBq g-1) indicate system linearity down to a total background noise of 1.8 × 10-3 counts mm-2 s-1. The minimum detectable activity is estimated to be 0.012 Bq for 36 000 s exposure and 0.023 Bq for 10 800 s exposure. The measured minimum detection threshold is less than 1600 electrons (equivalent to about 6 keV Si). This real-time system for beta autoradiography offers lower pixel pitch and higher sensitive area than the previous Medipix1-based system. It has a 14C sensitivity better than that of micro channel plate based systems, which, however, shows higher spatial resolution and sensitive area.

  16. Operation and test of hybridized silicon p-i-n arrays using open-source array control hardware and software

    Science.gov (United States)

    Moore, Andrew C.; Ninkov, Zoran; Burley, Gregory S.; Forrest, William J.; McMurtry, Craig W.; Avery, Lars E.

    2003-05-01

    A system for controlling and testing high-resolution non-destructive astronomical imagers was constructed using open-source components, both hardware and software. The open-source electronics design, originated by Carnegie Observatories (OCIW) for CCD cameras, was modified, assembled, and augmented with new circuitry which facilitates monitoring of voltages and currents. The electronics was run from Python user interface software based on a design from the University of Rochester. This new software utilized the Numarray and pyFITS modules developed at the Space Telescope Science Institute (STScI). Interfacing to the "dv" FITS image analysis package from the NASA IRTF was also implemented. Python (the STScI language of choice) was used as the primary language for systems integration, scripts for data acquisition, and scripts for data analysis. The DSP clocking software was a mixture of C and Motorola 56303 assembly. An interrupt-driven kernel-mode PCI device driver for Red Hat Linux was written in C, and used the PC processor and memory for image processing and acquisition. Two 1Κ × 1Κ Raytheon SB226-based hybridized silicon p-i-n arrays were operated and tested with the new system at temperatures as low as 10K. Signal path gain, node capacitance, well depth, dark current, and MTF measurements were made and are presented here.

  17. Luminescent Properties of Silicon Nanocrystals:Spin on Glass Hybrid Materials

    Directory of Open Access Journals (Sweden)

    Marco Antonio Vásquez-Agustín

    2017-01-01

    Full Text Available The photoluminescence characteristics of films consisting of Si nanocrystals either coated with or embedded into Spin on Glass (SOG were studied. Si nanocrystals showing red or blue luminescence when suspended in alcohol solution were obtained from porous silicon films. These were then either deposited in Si substrates and coated with SOG, or mixed in an SOG solution that was later spun on Si substrates. Both types of films were thermally annealed at 1100 °C for three hours in N2 atmosphere. Transmission electron microscopy measurements showed a mean diameter of 2.5 nm for the Si nanocrystals, as well as the presence of polycrystalline Si nanoagglomerates. These results were confirmed by X-ray diffraction studies, which revealed the (111, (220 and (311 Bragg peaks in Si nanocrystals. Fourier transform infrared spectroscopy studies showed that the coated films present higher chemical reactivity, promoting the formation of non-stoichiometric SiO2, while the embedded films behave as a stoichiometric SiO2 after the thermal annealing. The PL (photoluminescence characterization showed that both embedded and coated films present emission dominated by the Quantum Confinement Effect before undergoing any thermal treatment. After annealing, the spectra were found to be modified only in the case of the coated films, due to the formation of defects in the nanocrystals/SiO2 interface.

  18. Superstructured Carbon Nanotube/Porous Silicon Hybrid Materials for Lithium-Ion Battery Anodes

    Science.gov (United States)

    Lee, Jun-Ki; Kang, Shin-Hyun; Choi, Sung-Min

    2015-03-01

    High energy Li-ion batteries (LIBs) are in great demand for electronics, electric-vehicles, and grid-scale energy storage. To further increase the energy and power densities of LIBs, Si anodes have been intensively explored due to their high capacity, and high abundance compared with traditional carbon anodes. However, the poor cycle-life caused by large volume expansion during charge/discharge process has been an impediment to its applications. Recently, superstructured Si materials were received attentions to solve above mentioned problem in excellent mechanical properties, large surface area, and fast Li and electron transportation aspects, but applying superstructures to anode is in early stage yet. Here, we synthesized superstructured carbon nanotubes (CNTs)/porous Si hybrid materials and its particular electrochemical properties will be presented. Department of Nuclear and Quantum Engineering

  19. Transport and emplacement mechanisms of channelised long-runout debris avalanches, Ruapehu volcano, New Zealand

    Science.gov (United States)

    Tost, M.; Cronin, S. J.; Procter, J. N.

    2014-12-01

    The steep flanks of composite volcanoes are prone to collapse, producing debris avalanches that completely reshape the landscape. This study describes new insights into the runout of large debris avalanches enhanced by topography, using the example of six debris avalanche deposits from Mount Ruapehu, New Zealand. Individual large flank collapses (>1 km3) produced all of these units, with four not previously recognised. Five major valleys within the highly dissected landscape surrounding Mount Ruapehu channelled the debris avalanches into deep gorges (≥15 m) and resulted in extremely long debris avalanche runouts of up to 80 km from source. Classical sedimentary features of debris avalanche deposits preserved in these units include the following: very poor sorting with a clay-sand matrix hosting large subrounded boulders up to 5 m in diameter, jigsaw-fractured clasts, deformed clasts and numerous rip-up clasts of late-Pliocene marine sediments. The unusually long runouts led to unique features in distal deposits, including a pervasive and consolidated interclast matrix, and common rip-up clasts of Tertiary mudstone, as well as fluvial gravels and boulders. The great travel distances can be explained by the debris avalanches entering deep confined channels (≥15 m), where friction was minimised by a reduced basal contact area along with loading of water-saturated substrates which formed a basal lubrication zone for the overlying flowing mass. Extremely long-runout debris avalanches are most likely to occur in settings where initially partly saturated collapsing masses move down deep valleys and become thoroughly liquified at their base. This happens when pore water is available within the base of the flowing mass or in the sediments immediately below it. Based on their H/L ratio, confined volcanic debris avalanches are two to three times longer than unconfined, spreading flows of similar volume. The hybrid qualities of the deposits, which have some similarities to

  20. Lumped transmission line avalanche pulser

    Science.gov (United States)

    Booth, Rex

    1995-01-01

    A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse.

  1. Kinetics of Coloration in Photochromic Tungsten(VI) Oxide/Silicon Oxycarbide/Silica Hybrid Xerogel: Insight into Cation Self-diffusion Mechanisms.

    Science.gov (United States)

    Adachi, Kenta; Tokushige, Masataka; Omata, Kaoru; Yamazaki, Suzuko; Iwadate, Yoshiaki

    2016-06-08

    Silicon oxycarbide/silica composites with well-dispersed tungsten(VI) oxide (WO3) nanoparticles were obtained as transparent hybrid xerogels via an acid-catalyzed sol-gel process (hydrolysis/condensation polymerization) of 3-(triethoxysilyl)propyl methacrylate (TESPMA) and tetraethoxysilane (TEOS). The self-diffusion mechanism of alkali-metal cations and the kinetics of the photochromic coloration process in the WO3/TESPMA/TEOS hybrid xerogel systems have been systematically investigated. Under continuous UV illumination, a gradual color change (colorless → blue) corresponding to the reduction of W(6+) into W(5+) states in WO3 nanoparticles can be confirmed from the WO3/TESPMA/TEOS hybrid xerogels containing alkali-metal sulfates, although no coloration of the hybrid xerogel without alkali-metal sulfate was observed. The coloration behavior depended exclusively on a variety of alkali-metal cations present in the hybrid xerogel system. Furthermore, a detailed analysis of the self-diffusion mechanism confirmed that the alkali-metal cations electrostatically interact with a layer of unreacted silanol groups on the TESPMA/TEOS matrix surface, and subsequently pass through the interconnected pore network of the hybrid xerogel. More interestingly, in the context of an Arrhenius analysis, we found a good coincidence between the activation energies for alkali-metal cation self-diffusion and UV-induced coloration in the WO3/TESPMA/TEOS hybrid xerogel system containing the corresponding alkali-metal sulfate. It is experimentally obvious that the photochromic properties are dominated by the diffusion process of alkali-metal cations in the WO3/TESPMA/TEOS hybrid xerogel system. Such hybrid materials with cation-controlled photochromic properties will show promising prospects in applications demanding energy-efficient "smart windows" and "smart glasses".

  2. Avalanche dynamics on a rough inclined plane.

    Science.gov (United States)

    Börzsönyi, Tamás; Halsey, Thomas C; Ecke, Robert E

    2008-07-01

    The avalanche behavior of gravitationally forced granular layers on a rough inclined plane is investigated experimentally for different materials and for a variety of grain shapes ranging from spherical beads to highly anisotropic particles with dendritic shape. We measure the front velocity, area, and height of many avalanches and correlate the motion with the area and height. We also measure the avalanche profiles for several example cases. As the shape irregularity of the grains is increased, there is a dramatic qualitative change in avalanche properties. For rough nonspherical grains, avalanches are faster, bigger, and overturning in the sense that individual particles have down-slope speeds u p that exceed the front speed uf as compared with avalanches of spherical glass beads that are quantitatively slower and smaller and where particles always travel slower than the front speed. There is a linear increase of three quantities: (i) dimensionless avalanche height, (ii) ratio of particle to front speed, and (iii) the growth rate of avalanche speed with increasing avalanche size with increasing tan theta r where theta r is the bulk angle of repose, or with increasing beta P, the slope of the depth averaged flow rule, where both theta r and beta P reflect the grain shape irregularity. These relations provide a tool for predicting important dynamical properties of avalanches as a function of grain shape irregularity. A relatively simple depth-averaged theoretical description captures some important elements of the avalanche motion, notably the existence of two regimes of this motion.

  3. Geiger-mode avalanche photodiodes for Cherenkov detectors

    Energy Technology Data Exchange (ETDEWEB)

    Renker, D [Paul Scherrer Institue, 5232 Villigen PSI (Switzerland)], E-mail: dieter.renker@psi.ch

    2010-01-15

    Semiconductor photo sensors have in comparison with other detectors used in the ring image Cherenkov (RICH) and in the internally reflected Cherenkov light (DIRC) technique, photomultipier tubes and their derivates, a number of advantages: they have high photon detection efficiency ( {approx} 50%), are insensitive to magnetic fields, operate at low voltages and allow a compact, light and robust design. Specially the relatively new Geiger-mode avalanche photodiode (also called silicon photomultiplier) is a promising candidate for a detector of Cherenkov photons. The state of the development and the problems of this device will be described.

  4. Thin Film Silicon Nanowire/PEDOT:PSS Hybrid Solar Cells with Surface Treatment

    Science.gov (United States)

    Wang, Hao; Wang, Jianxiong; Hong, Lei; Tan, Yew Heng; Tan, Chuan Seng; Rusli

    2016-06-01

    SiNW/PEDOT:PSS hybrid solar cells are fabricated on 10.6-μm-thick crystalline Si thin films. Cells with Si nanowires (SiNWs) of different lengths fabricated using the metal-catalyzed electroless etching (MCEE) technique have been investigated. A surface treatment process using oxygen plasma has been applied to improve the surface quality of the SiNWs, and the optimized cell with 0.7-μm-long SiNWs achieved a power conversion efficiency (PCE) of 7.83 %. The surface treatment process is found to remove surface defects and passivate the SiNWs and substantially improve the average open circuit voltage from 0.461 to 0.562 V for the optimized cell. The light harvesting capability of the SiNWs has also been investigated theoretically using optical simulation. It is found that the inherent randomness of the MCEE SiNWs, in terms of their diameter and spacing, accounts for the excellent light harvesting capability. In comparison, periodic SiNWs of comparable dimensions have been shown to exhibit much poorer trapping and absorption of light.

  5. Simulation of Silicon Photomultiplier Signals

    NARCIS (Netherlands)

    Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Loehner, Herbert; Schaart, Dennis R.

    2009-01-01

    In a silicon photomultiplier (SiPM), also referred to as multi-pixel photon counter (MPPC), many Geiger-mode avalanche photodiodes (GM-APDs) are connected in parallel so as to combine the photon counting capabilities of each of these so-called microcells into a proportional light sensor. The

  6. Simulation of silicon photomultiplier signals

    NARCIS (Netherlands)

    Seifert, S.; Van Dam, H.T.; Huizenga, J.; Vinke, R.; Dendooven, P.; Löhner, H.; Schaart, D.R.

    2009-01-01

    In a silicon photomultiplier (SiPM), also referred to as multi-pixel photon counter (MPPC), many Geiger-mode avalanche photodiodes (GM-APDs) are connected in parallel so as to combine the photon counting capabilities of each of these so-called microcells into a proportional light sensor. The

  7. STUDY ON SIMULATION METHOD OF AVALANCHE : FLOW ANALYSIS OF AVALANCHE USING PARTICLE METHOD

    OpenAIRE

    2015-01-01

    In this paper, modeling for the simulation of the avalanche by a particle method is discussed. There are two kinds of the snow avalanches, one is the surface avalanche which shows a smoke-like flow, and another is the total-layer avalanche which shows a flow like Bingham fluid. In the simulation of the surface avalanche, the particle method in consideration of a rotation resistance model is used. The particle method by Bingham fluid is used in the simulation of the total-layer avalanche. At t...

  8. Large-area avalanche photodiodes for the detection of soft x rays.

    Science.gov (United States)

    Gullikson, E M; Gramsch, E; Szawlowski, M

    1995-08-01

    The charge-collection efficiency of beveled-edge-type silicon avalanche photodiodes has been determined for soft x rays in the 50-300-eV range. An efficiency of greater than 80% is measured for energies below the Si L absorption edge. The measured efficiency is well described by a model that accounts for absorption in an oxide overlayer and recombination at the front surface of the diode. The avalanche photodiodes are shown to be significantly more sensitive compared with other detectors for pulsed sources such as a laser-produced plasma source. These results are also very encouraging for soft-xray/ extreme-UV applications involving synchrotron radiation.

  9. Avalanche hazard and control in Kazakhstan

    Directory of Open Access Journals (Sweden)

    V. P. Blagoveshchensky

    2014-01-01

    Full Text Available In Kazakhstan, area of 124 thousand km2 is prone to the avalanche hazard. Avalanches are released down in mountain regions situated along the eastern boundary of Kazakhstan. Systematic studies of avalanches here were started in 1958 by explorer I.S. Sosedov; later on, I.V. Seversky continued these investigations in Institute of Geography of the Kazakh Soviet Republic. Actually, he founded the Kazakh school of the avalanche studies. In 1970–1980s, five snow-avalanche stations operated in Kazakhstan: two in Il’ Alatau, two in Zhetysu Alatau, and one in the Altai. At the present time, only two stations and two snow-avalanche posts operate, and all of them are located in Il’ Alatau.Since 1951 to 2013, 75 avalanches took place in Kazakhstan, releases of them caused significant damages. For this period 172 people happened to be under avalanches, among them 86 perished. Large avalanche catastrophes causing human victims and destructions took place in Altai in 1977 and in Karatau in 1990. In spring of 1966, only in Il’ Alatau avalanches destroyed more 600 ha of mature fir (coniferous forest, and the total area of forest destroyed here by avalanches amounts to 2677 ha or 7% of the total forest area.For 48 years of the avalanche observations, there were 15 winters with increased avalanche activity in the river Almatinka basin when total volume of released snow exceeded annual mean value of 147 thousand m3. During this period, number of days with winter avalanches changed from three (in season of 1973/1974 to 28 (1986/1987, the average for a year is 16 days for a season. Winter with the total volume of snow 1300 thousand m3 occur once in 150 years. Individual avalanches with maximal volume of 350 thousand m3 happen once in 80 years.Preventive avalanche releases aimed at protection of roads and settlements are used in Kazakhstan since 1974. These precautions are taken in Il’ Alatau, Altai, and on Kalbinsky Range. Avalanches are released with the

  10. On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

    Science.gov (United States)

    Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

    2015-02-11

    The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

  11. Preparation and characterization of hybrid materials of epoxy resin type bisphenol a with silicon and titanium oxides by sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo C, A.; Osuna A, J. G., E-mail: acc.carrillo@gmail.com [Universidad Autonoma de Coahuila, Facultad de Ciencias Quimicas, Blvd. Venustiano Carranza y Jose Cardenas Valdes, 25000 Saltillo, Coahuila (Mexico)

    2011-07-01

    Hybrid materials were synthesized from epoxy resins as a result bisphenol type A-silicon oxide and epoxy resin bisphenol type A-titanium oxide were obtained. The synthesis was done by sol-gel process using tetraethyl orthosilicate (Teos) and titanium isopropoxide (I Ti) as inorganic precursors. The molar ratio of bisphenol A to the inorganic precursors was the studied variable. The materials were characterized by thermal analysis, infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The hybrid nature of the materials was demonstrated through thermal analysis and infrared spectroscopy. In both systems, as the amount of alkoxide increased, the bands described above were more defined. This behavior indicates the interactions between the resin and the alkoxides. Hybrids with Teos showed a smoother and homogeneous surface in its entirety, without irregularities. Hybrids with titanium isopropoxide had low roughness. Both Teos and I Ti hybrids showed a decrease on the atomic weight percentage of carbon due to a slight reduction of the organic part on the surface. (Author)

  12. Single-photon avalanche photodiodes with integrated quenching resistor

    Energy Technology Data Exchange (ETDEWEB)

    Mazzillo, M. [STMicroelectronics, IMS R and D Stradale Primosole 50, 95121 Catania (Italy)], E-mail: massimo.mazzillo@st.com; Condorelli, G.; Piazza, A.; Sanfilippo, D.; Valvo, G.; Carbone, B.; Fallica, G. [STMicroelectronics, IMS R and D Stradale Primosole 50, 95121 Catania (Italy); Billotta, S.; Belluso, M.; Bonanno, G. [INAF-Osservatorio Astrofisico di Catania, Via Santa Sofia 78, 95123 Catania (Italy); Pappalardo, A.; Cosentino, L.; Finocchiaro, P. [INFN-Laboratori Nazionali del Sud, Via Santa Sofia 64, 95125 Catania (Italy)

    2008-06-21

    In this paper we present the results of the first electrical and optical characterization performed on STMicroelectronics new photosensor technology based on silicon single-photon avalanche photodiodes (SPAD). On the prospective of the design and the manufacturing of large-area silicon photomultipliers to be used as photodetectors for nuclear medicine imaging applications, we have modified our previous SPAD technology by means of the integration of a high-value quenching resistor to the photodiode. Moreover, an appropriate antireflective coating layer and the reduction of the quasi-neutral region thickness above the thin junction depletion layer have been introduced in the process flow of the device to enhance its spectral response in blue and near ultraviolet wavelength ranges. High gain, low leakage currents, low dark noise, very good quantum detection efficiency in blue-near UV ranges and a good linearity of the photodiode response to the incident luminous flux are the main characterization results.

  13. The prehospital management of avalanche victims.

    Science.gov (United States)

    Kornhall, Daniel K; Martens-Nielsen, Julie

    2016-12-01

    Avalanche accidents are frequently lethal events with an overall mortality of 23%. Mortality increases dramatically to 50% in instances of complete burial. With modern day dense networks of ambulance services and rescue helicopters, health workers often become involved during the early stages of avalanche rescue. Historically, some of the most devastating avalanche accidents have involved military personnel. Armed forces are frequently deployed to mountain regions in order to train for mountain warfare or as part of ongoing conflicts. Furthermore, military units are frequently called to assist civilian organised rescue in avalanche rescue operations. It is therefore important that clinicians associated with units operating in mountain regions have an understanding of, the medical management of avalanche victims, and of the preceding rescue phase. The ensuing review of the available literature aims to describe the pathophysiology particular to avalanche victims and to outline a structured approach to the search, rescue and prehospital medical management.

  14. Avalanche ecology and large magnitude avalanche events: Glacier National Park, Montana, USA

    Science.gov (United States)

    Fagre, Daniel B.; Peitzsch, Erich H.

    2010-01-01

    Large magnitude snow avalanches play an important role ecologically in terms of wildlife habitat, vegetation diversity, and sediment transport within a watershed. Ecological effects from these infrequent avalanches can last for decades. Understanding the frequency of such large magnitude avalanches is also critical to avalanche forecasting for the Going-to-the-Sun Road (GTSR). In January 2009, a large magnitude avalanche cycle occurred in and around Glacier National Park, Montana. The study site is the Little Granite avalanche path located along the GTSR. The study is designed to quantify change in vegetative cover immediately after a large magnitude event and document ecological response over a multi-year period. GPS field mapping was completed to determine the redefined perimeter of the avalanche path. Vegetation was inventoried using modified U.S. Forest Service Forest Inventory and Analysis plots, cross sections were taken from over 100 dead trees throughout the avalanche path, and an avalanche chronology was developed. Initial results indicate that the perimeter of this path was expanded by 30%. The avalanche travelled approximately 1200 vertical meters and 3 linear kilometers. Stands of large conifers as old as 150 years were decimated by the avalanche, causing a shift in dominant vegetation types in many parts of the avalanche path. Woody debris is a major ground cover up to 3 m in depth on lower portions of the avalanche path and will likely affect tree regrowth. Monitoring and measuring the post-avalanche vegetation recovery of this particular avalanche path provides a unique dataset for determining the ecological role of avalanches in mountain landscapes.

  15. Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire; Sagnes, Isabelle; Raj, Rama [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Lenglé, Kevin; Gay, Mathilde; Bramerie, Laurent [Université Européenne de Bretagne (UEB), 5 Boulevard Laënnec, 35000 Rennes (France); CNRS-Foton Laboratory (UMR 6082), Enssat, BP 80518, 22305 Lannion Cedex (France); Braive, Rémy; Raineri, Fabrice, E-mail: fabrice.raineri@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Université Paris Diderot, Sorbonne Paris Cité, 75207 Paris Cedex 13 (France)

    2014-01-06

    Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

  16. Corrosion and wear behaviour of Al–Mg–Si alloy matrix hybrid composites reinforced with rice husk ash and silicon carbide

    OpenAIRE

    Kenneth Kanayo Alaneme; Tolulope Moyosore Adewale; Peter Apata Olubambi

    2014-01-01

    The corrosion and wear behaviour of Al–Mg–Si alloy matrix hybrid composites developed with the use of rice husk ash (RHA) and silicon carbide (SiC) particulates as reinforcements were investigated. RHA and SiC mixed in weight ratios 0:1, 1:3, 1:1, 3:1, and 1:0 were utilized to prepare 5, 7.5 and 10 wt% of the reinforcing phase with Al Mg Si alloy as matrix using double stir casting process. Open circuit corrosion potential (OCP) and potentiodynamic polarization measurements were used to study...

  17. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

    Science.gov (United States)

    Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2016-08-22

    We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

  18. Simulation of avalanche electron multiplication in photodetectors with blocked jump conductivity

    CERN Document Server

    Sinitsa, S P

    2002-01-01

    The process of the avalanche electron multiplication in silicon BIB-structure is simulated by Monte Carlo method for the regime single-photon counting. The electron acceleration in the linear electric field, the elastic scattering of electrons on longitudinal acoustic phonons the inelastic scattering of electrons on intervalley phonons and ionization of neutral impurity centers are taken into account during electron motion. The simple algorithm is proposed to calculate coordinates of all ionized centers in the avalanche and the probability function of N electron yield from the avalanche at entering one electron into the multiplication range. It is shown that this function has maximum near the average value that correlates with experimental data

  19. [Avalanche emergencies. Review of the current situation].

    Science.gov (United States)

    Paal, P; Beikircher, W; Brugger, H

    2006-03-01

    In North America and Europe around 140 persons die every year due to avalanches, approximately 35 in North America, 100 in the European Alps, and 5 in other parts of Europe. Most of the victims are skiers and snowboarders. This article outlines the specific pathophysiology of avalanche burials, such as hypoxia, hypercapnia, and hypothermia and also other factors which influence survival. Strategies to minimize the mortality due to avalanches and the on-site treatment of buried persons are discussed. Finally, possibilities to reduce the number of avalanche deaths are pointed out.

  20. Silicon Nanowire/Polymer Hybrid Solar Cell-Supercapacitor: A Self-Charging Power Unit with a Total Efficiency of 10.5.

    Science.gov (United States)

    Liu, Ruiyuan; Wang, Jie; Sun, Teng; Wang, Mingjun; Wu, Changsheng; Zou, Haiyang; Song, Tao; Zhang, Xiaohong; Lee, Shuit-Tong; Wang, Zhong Lin; Sun, Baoquan

    2017-07-12

    An integrated self-charging power unit, combining a hybrid silicon nanowire/polymer heterojunction solar cell with a polypyrrole-based supercapacitor, has been demonstrated to simultaneously harvest solar energy and store it. By efficiency enhancement of the hybrid nanowire solar cells and a dual-functional titanium film serving as conjunct electrode of the solar cell and supercapacitor, the integrated system is able to yield a total photoelectric conversion to storage efficiency of 10.5%, which is the record value in all the integrated solar energy conversion and storage system. This system may not only serve as a buffer that diminishes the solar power fluctuations from light intensity, but also pave its way toward cost-effective high efficiency self-charging power unit. Finally, an integrated device based on ultrathin Si substrate is demonstrated to expand its feasibility and potential application in flexible energy conversion and storage devices.

  1. Remote detection of artificially triggered avalanches below a fixed avalanche control installation

    Science.gov (United States)

    van Herwijnen, Alec; Simioni, Stephan; Schweizer, Juerg

    2014-05-01

    Avalanche control by explosives is widely used as a temporary preventive measure to reduce avalanche hazard. The goal is to artificially trigger smaller less destructive avalanches, by detonating charges either above or on the snow surface. Hand charges are most often used, whereby the explosives are deployed by manually hand tossing or lowering onto the snow slope. Given the inherent dangers and limitations of this type of avalanche control, fixed avalanche control installations are increasingly used. These consist of strategically placed remote controlled installations that generate an explosion above the snow pack in an avalanche starting zone. While fixed installations can be used at any time and minimize the risk to avalanche control personnel, visual confirmation is still required to verify if an avalanche released. In order to remotely detect artificially triggered avalanches, we therefore developed a low-cost seismic monitoring system. We deployed the monitoring system in a ski area above the town of Davos , in the eastern Swiss Alps, below a Gazex installation, a remote controlled installation that generates an air blast by detonating a fuel-air explosive above the snow pack. The monitoring system consists of three vertical component geophones inserted in the ground at approximately 14, 27 and 46 meters from the Gazex installation. Our results show that, despite the relatively low precision of the monitoring equipment, both the detonation and the resulting avalanches can clearly be identified in the seismic data. Specifically, detonations are characterized by short, high amplitude broadband signals, while avalanches generate much longer, low frequency signals. Furthermore, information on the size of the artificially triggered avalanches is also obtained as it directly relates to the duration of the generated seismic signal. The overall goal is to assess the effectiveness of the fixed avalanche control installation with regards to yield (i.e. number of

  2. A bioanalytical microsystem for protein and DNA sensing based on a monolithic silicon optoelectronic transducer

    Energy Technology Data Exchange (ETDEWEB)

    Misiakos, K [Microelectronics Institute, NCSR ' Demokritos' , 15310, Athens (Greece); Petrou, P S [Immunoassay Lab., I/R-RP, NCSR ' Demokritos' , 15310, Athens (Greece); Kakabakos, S E [Immunoassay Lab., I/R-RP, NCSR ' Demokritos' , 15310, Athens (Greece); Ruf, H H [Fraunhofer Institute of Biomedical Engineering (IBMT) and University of Saarland, 66386, St Ingbert (Germany); Ehrentreich-Foerster, E [Department of Molecular Bioanalytics and Bioelectronics, Fraunhofer Institute for Biomedical Engineering, D-14558 Nuthetal (Germany); Bier, F F [Department of Molecular Bioanalytics and Bioelectronics, Fraunhofer Institute for Biomedical Engineering, D-14558 Nuthetal (Germany)

    2005-01-01

    A bioanalytical microsystem that is based on a monolithic silicon optical transducer and a microfluidic module and it is appropriate for real-time sensing of either DNA or protein analytes is presented. The optical transducer monolithically integrates silicon avalanche diodes as light sources, silicon nitride optical fibers and detectors and efficiently intercouples these optical elements through a self-alignment technique. After hydrophilization and silanization of the transducer surface, the biomolecular probes are immobilized through physical adsorption. Detection is performed through reaction of the immobilized biomolecules with gold nanoparticle labeled counterpart molecules. The binding of these molecules within the evanescent field at the surface of the optical fiber cause attenuated total reflection of the waveguided modes and reduction of the detector photocurrent. Using the developed microsystem, determination of single nucleotide polymorphism (SNP) in the gene of the human phenol sulfotransferase SULT1A1 was achieved. Full-matching hybrid resulted in 4-5 times higher signals compared to the mismatched hybrid after hybridization and dissociation processes. The protein sensing abilities of the developed microsystem were also investigated through a non-competitive assay for the determination of the MB isoform of creatine kinase enzyme (CK-MB) that is a widely used cardiac marker.

  3. On the temporal organization of neuronal avalanches.

    Science.gov (United States)

    Lombardi, Fabrizio; Herrmann, Hans J; Plenz, Dietmar; De Arcangelis, Lucilla

    2014-01-01

    Spontaneous activity of cortex in vitro and in vivo has been shown to organize as neuronal avalanches. Avalanches are cascades of neuronal activity that exhibit a power law in their size and duration distribution, typical features of balanced systems in a critical state. Recently it has been shown that the distribution of quiet times between consecutive avalanches in rat cortex slice cultures displays a non-monotonic behavior with a power law decay at short time scales. This behavior has been attributed to the slow alternation between up and down-states. Here we further characterize the avalanche process and investigate how the functional behavior of the quiet time distribution depends on the fine structure of avalanche sequences. By systematically removing smaller avalanches from the experimental time series we show that size and quiet times are correlated and highlight that avalanche occurrence exhibits the characteristic periodicity of θ and β/γ oscillations, which jointly emerge in most of the analyzed samples. Furthermore, our analysis indicates that smaller avalanches tend to be associated with faster β/γ oscillations, whereas larger ones are associated with slower θ and 1-2 Hz oscillations. In particular, large avalanches corresponding to θ cycles trigger cascades of smaller ones, which occur at β/γ frequency. This temporal structure follows closely the one of nested θ - β/γ oscillations. Finally we demonstrate that, because of the multiple time scales characterizing avalanche dynamics, the distributions of quiet times between avalanches larger than a certain size do not collapse onto a unique function when rescaled by the average occurrence rate. However, when considered separately in the up-state and in the down-state, these distributions are solely controlled by the respective average rate and two different unique function can be identified.

  4. Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

    Science.gov (United States)

    Toçoǧlu, Ubeyd; Hatipoǧlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

    2016-12-01

    In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and internal resistance of cells. Results showed that improvement on cyclic performance of silicon anodes was achieved with novel composite silicon/graphene/MWCNT composite anode structures.

  5. Avalanche outbreaks emerging in cooperative contagions

    Science.gov (United States)

    Cai, Weiran; Chen, Li; Ghanbarnejad, Fakhteh; Grassberger, Peter

    2015-11-01

    The spreading of contagions can exhibit a percolation transition, which separates transitory prevalence from outbreaks that reach a finite fraction of the population. Such transitions are commonly believed to be continuous, but empirical studies have shown more violent spreading modes when the participating agents are not limited to one type. Striking examples include the co-epidemic of the Spanish flu and pneumonia that occurred in 1918 (refs , ), and, more recently, the concurrent prevalence of HIV/AIDS and a host of diseases. It remains unclear to what extent an outbreak in the presence of interacting pathogens differs from that due to an ordinary single-agent process. Here we study a mechanistic model for understanding contagion processes involving inter-agent cooperation. Our stochastic simulations reveal the possible emergence of a massive avalanche-like outbreak right at the threshold, which is manifested as a discontinuous phase transition. Such an abrupt change arises only if the underlying network topology supports a bottleneck for cascaded mutual infections. Surprisingly, all these discontinuous transitions are accompanied by non-trivial critical behaviours, presenting a rare case of hybrid transition. The findings may imply the origin of catastrophic occurrences in many realistic systems, from co-epidemics to financial contagions.

  6. Influence of the hybrid material size in silicon oxycarbide materials characteristics; Influencia del tamano del material hibrido en las caracteristicas de los oxicarburos de silicio obtenidos

    Energy Technology Data Exchange (ETDEWEB)

    Mazo, M. A.; Palencia, C.; Nistal, A.; Rubio, F.; Rubio, J.; Oteo, J. L.

    2012-11-01

    In this work has been investigated the influence of the TEOS/PDMS hybrid size during the pyrolysis process to obtain the related silicon oxycarbide glasses. Hybrids monolithic pieces (100 mm x 50 mm x 5 mm), were crushed (1 mm x 1 mm x 1 mm) and grounded in agate or attrition to 16 and 3 {mu}m, respectively. Then, they were pyrolyzed at 1100 degree centigrade to obtain silicon oxycarbide glasses (SiOC). These materials present structural and microstructural differences. The monolithic sample showed the highest %C into the silica network (34 %), and after grounding in agate mortar decreased to 26 %. However the attrition milled sample reached %C values similar to the monolithic (32 %). This agrees with FT-IR band at 880 cm-1 assigned to Si-C bonds formation and related to higher carbon content into silica network. The carbon free phase displays a domain size of 3.44 nm which increased to 3.66 nm for the attrition milled. This result is due to a higher graphitization degree. The SiOC monolithic sample morphology displays spherical interconnected particles with pores of 12 {mu}m. This morphology disappeared for the SiOC attrition milled sample, formed by irregular particles of 3 {mu}m. (Author) 38 refs.

  7. Triaging multiple victims in an avalanche setting: the Avalanche Survival Optimizing Rescue Triage algorithmic approach.

    Science.gov (United States)

    Bogle, Lee B; Boyd, Jeff J; McLaughlin, Kyle A

    2010-03-01

    As winter backcountry activity increases, so does exposure to avalanche danger. A complicated situation arises when multiple victims are caught in an avalanche and where medical and other rescue demands overwhelm resources in the field. These mass casualty incidents carry a high risk of morbidity and mortality, and there is no recommended approach to patient care specific to this setting other than basic first aid principles. The literature is limited with regard to triaging systems applicable to avalanche incidents. In conjunction with the development of an electronic avalanche rescue training module by the Canadian Avalanche Association, we have designed the Avalanche Survival Optimizing Rescue Triage algorithm to address the triaging of multiple avalanche victims to optimize survival and disposition decisions.

  8. Avalanche!--Teachable Moments in Outdoor Education

    Science.gov (United States)

    Galloway, Shayne

    2005-01-01

    Rarely do outdoor educators get the opportunity to safely incorporate an avalanche while the topic of the day is actually avalanche awareness and forecasting. Many similar possibilities exist in the expeditionary context, but even brief excursions may result in incredible learning experiences. These "teachable moments" occur regularly in the…

  9. A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

    NARCIS (Netherlands)

    Lee, M.J.; Sun, P.; Charbon, E.

    2015-01-01

    This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring

  10. Observations and modelling of snow avalanche entrainment

    Directory of Open Access Journals (Sweden)

    B. Sovilla

    2002-01-01

    Full Text Available In this paper full scale avalanche dynamics measurements from the Italian Pizzac and Swiss Vallée de la Sionne test sites are used to develop a snowcover entrainment model. A detailed analysis of three avalanche events shows that snowcover entrainment at the avalanche front appears to dominate over bed erosion at the basal sliding surface. Furthermore, the distribution of mass within the avalanche body is primarily a function of basal friction. We show that the mass distribution in the avalanche changes the flow dynamics significantly. Two different dynamical models, the Swiss Voellmy-fluid model and the Norwegian NIS model, are used to back calculate the events. Various entrainment methods are investigated and compared to measurements. We demon-strate that the Norwegian NIS model is clearly better able to simulate the events once snow entrainment has been included in the simulations.

  11. Thermal energy in dry snow avalanches

    Science.gov (United States)

    Steinkogler, W.; Sovilla, B.; Lehning, M.

    2015-09-01

    Avalanches can exhibit many different flow regimes from powder clouds to slush flows. Flow regimes are largely controlled by the properties of the snow released and entrained along the path. Recent investigations showed the temperature of the moving snow to be one of the most important factors controlling the mobility of the flow. The temperature of an avalanche is determined by the temperature of the released and entrained snow but also increases by frictional processes with time. For three artificially released avalanches, we conducted snow profiles along the avalanche track and in the deposition area, which allowed quantifying the temperature of the eroded snow layers. This data set allowed to calculate the thermal balance, from release to deposition, and to discuss the magnitudes of different sources of thermal energy of the avalanches. For the investigated dry avalanches, the thermal energy increase due to friction was mainly depending on the effective elevation drop of the mass of the avalanche with a warming of approximately 0.3 °C per 100 vertical metres. Contrarily, the temperature change due to entrainment varied for the individual avalanches, from -0.08 to 0.3 °C, and depended on the temperature of the snow along the path and the erosion depth. Infrared radiation thermography (IRT) was used to assess the surface temperature before, during and just after the avalanche with high spatial resolution. This data set allowed to identify the warmest temperatures to be located in the deposits of the dense core. Future research directions, especially for the application of IRT, in the field of thermal investigations in avalanche dynamics are discussed.

  12. Thermal energy in dry snow avalanches

    Directory of Open Access Journals (Sweden)

    W. Steinkogler

    2014-11-01

    Full Text Available Avalanches can exhibit many different flow regimes from powder clouds to slush flows. Flow regimes are largely controlled by the properties of the snow released and entrained along the path. Recent investigations showed the temperature of the moving snow to be one of the most important factors controlling the mobility of the flow. The temperature of an avalanche is determined by the temperature of the released and entrained snow but also increases by frictional and collisional processes with time. For three artificially released avalanches, we conducted snow profiles along the avalanche track and in the deposition area, which allowed quantifying the temperature of the eroded snow layers. Infrared radiation thermography (IRT was used to assess the surface temperature before, during and just after the avalanche with high spatial resolution. This data set allowed to calculate the thermal balance, from release to deposition, and to discuss the magnitudes of different sources of thermal energy of the avalanches. We could confirm that, for the investigated dry avalanches, the thermal energy increase due to friction was mainly depending on the elevation drop of the avalanche with a warming of approximately 0.5 °C per 100 height meters. Contrary, warming due to entrainment was very specific to the individual avalanche and depended on the temperature of the snow along the path and the erosion depth ranging from nearly no warming to a maximum observed warming of 1 °C. Furthermore, we could observe the warmest temperatures are located in the deposits of the dense core. Future research directions, especially for the application of IRT, in the field of thermal investigations in avalanche dynamics are discussed.

  13. Equilibrium avalanches in spin glasses

    Science.gov (United States)

    Le Doussal, Pierre; Müller, Markus; Wiese, Kay Jörg

    2012-06-01

    We study the distribution of equilibrium avalanches (shocks) in Ising spin glasses which occur at zero temperature upon small changes in the magnetic field. For the infinite-range Sherrington-Kirkpatrick (SK) model, we present a detailed derivation of the density ρ(ΔM) of the magnetization jumps ΔM. It is obtained by introducing a multicomponent generalization of the Parisi-Duplantier equation, which allows us to compute all cumulants of the magnetization. We find that ρ(ΔM)˜ΔM-τ with an avalanche exponent τ=1 for the SK model, originating from the marginal stability (criticality) of the model. It holds for jumps of size 1≪ΔMmodel. For finite-range models, using droplet arguments, we obtain the prediction τ=(df+θ)/dm where df,dm, and θ are the fractal dimension, magnetization exponent, and energy exponent of a droplet, respectively. This formula is expected to apply to other glassy disordered systems, such as the random-field model and pinned interfaces. We make suggestions for further numerical investigations, as well as experimental studies of the Barkhausen noise in spin glasses.

  14. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection.

    Science.gov (United States)

    Kang, Y; Zadka, M; Litski, S; Sarid, G; Morse, M; Paniccia, M J; Kuo, Y-H; Bowers, J; Beling, A; Liu, H D; McIntosh, D C; Campbell, J; Pauchard, A

    2008-06-23

    We designed and fabricated Ge/Si avalanche photodiodes grown on silicon substrates. The mesa-type photodiodes exhibit a responsivity at 1310 nm of 0.54 A/W, a breakdown voltage thermal coefficient of 0.05%/ degrees C, a 3 dB-bandwidth of 10 GHz. The gain-bandwidth product was measured as 153 GHz. The effective k value extracted from the excess noise factor was 0.1.

  15. Hummock alignment in Japanese volcanic debris avalanches controlled by pre-avalanche slope of depositional area

    Science.gov (United States)

    Yoshida, Hidetsugu

    2014-10-01

    This paper investigates the relationship of hummock orientation to the flow dynamics of volcanic debris avalanches. There are opposing views on whether hummocks are systematically aligned along debris avalanche paths, or not. To investigate this geomorphologically fundamental question, I investigated hummock orientation for six Japanese debris avalanches of two simple styles: four "freely spreading" debris avalanches, and two "valley-filling" debris avalanches. Quantitative GIS-based data analysis revealed that hummock orientation along the avalanche flow path alternated between dominantly parallel to and dominantly perpendicular to the flow direction. These changes of alignment reflect dynamic changes of the local stress field within the avalanche, alternating between extensional and compressional in response to changes of the slope of the pre-avalanche ground surface. Changes of hummock alignment from perpendicular to parallel indicate that the local stress regime has changed from compressional to extensional. Conversely, changes of hummock alignment from parallel to perpendicular indicate that the local stress regime has changed from extensional to compressional. Thus, this research demonstrated a clear relationship between hummock orientation and dynamic changes of stress regime within avalanches that are related to changes of the slope of the pre-avalanche ground surface.

  16. Temporal correlations in neuronal avalanche occurrence

    Science.gov (United States)

    Lombardi, F.; Herrmann, H. J.; Plenz, D.; de Arcangelis, L.

    2016-04-01

    Ongoing cortical activity consists of sequences of synchronized bursts, named neuronal avalanches, whose size and duration are power law distributed. These features have been observed in a variety of systems and conditions, at all spatial scales, supporting scale invariance, universality and therefore criticality. However, the mechanisms leading to burst triggering, as well as the relationship between bursts and quiescence, are still unclear. The analysis of temporal correlations constitutes a major step towards a deeper understanding of burst dynamics. Here, we investigate the relation between avalanche sizes and quiet times, as well as between sizes of consecutive avalanches recorded in cortex slice cultures. We show that quiet times depend on the size of preceding avalanches and, at the same time, influence the size of the following one. Moreover we evidence that sizes of consecutive avalanches are correlated. In particular, we show that an avalanche tends to be larger or smaller than the following one for short or long time separation, respectively. Our analysis represents the first attempt to provide a quantitative estimate of correlations between activity and quiescence in the framework of neuronal avalanches and will help to enlighten the mechanisms underlying spontaneous activity.

  17. Temporal correlations in neuronal avalanche occurrence.

    Science.gov (United States)

    Lombardi, F; Herrmann, H J; Plenz, D; de Arcangelis, L

    2016-04-20

    Ongoing cortical activity consists of sequences of synchronized bursts, named neuronal avalanches, whose size and duration are power law distributed. These features have been observed in a variety of systems and conditions, at all spatial scales, supporting scale invariance, universality and therefore criticality. However, the mechanisms leading to burst triggering, as well as the relationship between bursts and quiescence, are still unclear. The analysis of temporal correlations constitutes a major step towards a deeper understanding of burst dynamics. Here, we investigate the relation between avalanche sizes and quiet times, as well as between sizes of consecutive avalanches recorded in cortex slice cultures. We show that quiet times depend on the size of preceding avalanches and, at the same time, influence the size of the following one. Moreover we evidence that sizes of consecutive avalanches are correlated. In particular, we show that an avalanche tends to be larger or smaller than the following one for short or long time separation, respectively. Our analysis represents the first attempt to provide a quantitative estimate of correlations between activity and quiescence in the framework of neuronal avalanches and will help to enlighten the mechanisms underlying spontaneous activity.

  18. Avalanche Initiaition Mechanism - A Finite-element Approach

    Directory of Open Access Journals (Sweden)

    S. Senthil

    2003-01-01

    Full Text Available The Himalayas, the longest chain of mountains in the world, experiences extensive snowfall and avalanche activity during winter. Some of these areas are densely populated, and death and destruction on large scale due to avalanche activity has been reported in these areas. One of the ways of reducing the loss of life and material due to avalanches is through prediction of avalanches. An understanding of weather forecasting, terrain, and avalanche initiation mechanism is a prerequisite for avalanche prediction. In the present paper mathematical modelling of avalanche initiation mechanism has been discussed.

  19. Performance of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon Pixel readout for Cherenkov ring detection

    CERN Document Server

    Alemi, M; Bibby, J H; Campbell, M; Duane, A; Easo, S; Gys, Thierry; Halley, A W; Piedigrossi, D; Puertolas, D; Rosso, E; Simmons, B; Snoeys, W; Websdale, David M; Wotton, S A; Wyllie, Ken H

    1999-01-01

    We report on the first test beam performance of a hybrid photon detector prototype, using binary readout electronics, intended for use in the ring imaging Cherenkov detectors of the LHCb experiment at the CERN Large Hadron Collider. The photon detector is based on a cross-focussed image intensifier tube geometry. The anode consists of a silicon pixel array bump-bonded to a binary readout chip with matching pixel electronics. The detector has been installed in a quarter-scale prototype vessel of the LHCb ring imaging Cherenkov system. Focussed ring images produced by 120 GeV/c negative pions traversing an air radiator have been recorded. The observed light yield and Cherenkov angle resolution are discussed.

  20. Performance of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout for Cherenkov ring detection

    Energy Technology Data Exchange (ETDEWEB)

    Alemi, M.; Barber, G.; Bibby, J.; Campbell, M.; Duane, A.; Easo, S.; Gys, T.; Halley, A.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Simmons, B.; Snoeys, W.; Websdale, D.; Wotton, S.; Wyllie, K

    1999-08-01

    We report on the first test beam performance of a hybrid photon detector prototype, using binary readout electronics, intended for use in the ring imaging Cherenkov detectors of the LHCb experiment at the CERN Large Hadron Collider. The photon detector is based on a cross-focussed image intensifier tube geometry. The anode consists of a silicon pixel array bump-bonded to a binary readout chip with matching pixel electronics. The detector has been installed in a quarter-scale prototype vessel of the LHCb ring imaging Cherenkov system. Focussed ring images produced by 120 GeV/c negative pions traversing an air radiator have been recorded. The observed light yield and Cherenkov angle resolution are discussed.

  1. Self-aligned multi-channel superconducting nanowire avalanche photodetector

    CERN Document Server

    Cheng, Risheng; Ma, Xiaosong; Fan, Linran; Fong, King Y; Poot, Menno; Tang, Hong X

    2016-01-01

    We describe a micromachining process to allow the coupling of an array of single-mode telecommunication fibers to individual superconducting nanowire single photon detectors (SNSPDs). As proof of principle, we show the integration of four detectors on the same silicon chip, including two standard single-section nanowire detectors and two superconducting nanowire avalanche photodetectors (SNAPs) with modified series structure without external inductor, and their performances are compared. The SNAP shows saturated system detection efficiency of 16% while the dark count rate is less than 20 Hz, without the use of photon-recycling reflectors. The SNAP also demonstrates doubled signal-to-noise ratio, reduced reset time (~ 4.9 ns decay time) and improved timing jitter (62 ps FWHM) compared to standard SNSPDs.

  2. The breakdown flash of Silicon Avalance Photodiodes - backdoor for eavesdropper attacks?

    OpenAIRE

    Kurtsiefer, Christian; Zarda, Patrick; Mayer, Sonja; Weinfurter, Harald

    2001-01-01

    Silicon avalanche photodiodes are the most sensitive photodetectors in the visible to near infrared region. However, when they are used for single photon detection in a Geiger mode, they are known to emit light on the controlled breakdown used to detect a photoelectron. This fluorescence light might have serious impacts on experimental applications like quantum cryptography or single-particle spectroscopy. We characterized the fluorescence behaviour of silicon avalanche photodiodes in the exp...

  3. Monitoring and modelling snow avalanches in Svalbard

    Science.gov (United States)

    Humlum, O.; Christiansen, H.; Neumann, U.; Eckerstorfer, M.; Sjöblom, A.; Stalsberg, K.; Rubensdotter, L.

    2009-04-01

    Monitoring and modelling snow avalanches in Svalbard Ole Humlum 1,3, Hanne H. Christiansen 1, Ulrich Neumann 1, Markus Eckerstorfer 1, Anna Sjöblom 1, Knut Stalsberg 2 and Lena Rubensdotter 2. 1: The University Centre in Svalbard (UNIS). 2: Geological Survey of Norway (NGU) 3: University of Oslo Ground based transportation in Svalbard landscape all takes place across mountainous terrain affected by different geomorphological slope processes. Traffic in and around the Svalbard settlements is increasing, and at the same time global climate models project substantial increases in temperature and precipitation in northern high latitudes for coming century. Therefore improved knowledge on the effect of climatic changes on slope processes in such high arctic landscapes is becoming increasingly important. Motivated by this, the CRYOSLOPE Svalbard research project since 2007 has carried out field observations on snow avalanche frequency and associated meteorological conditions. Snow avalanches are important geomorphic agents of erosion and deposition, and have long been a source of natural disasters in many mid-latitude mountain areas. Avalanches as a natural hazard has thereby been familiar to inhabitants of the Alps and Scandinavia for centuries, while it is a more recent experience in high arctic Svalbard. In addition, overall climate, topography and especially high winter wind speeds makes it difficult to apply snow avalanche models (numerical or empirical) developed for use at lower latitudes, e.g. in central Europe. In the presentation we examplify results from the ongoing (since winter 2006-07) monitoring of snow avalanches in Svalbard along a 70 km long observational route in the mountains. In addition, we present observations on the geomorphological impact of avalanches, with special reference to the formation of rock glaciers. Finally, we also present some initial results from numerical attempts of snow avalanche risk modelling within the study area.

  4. Statistics of Electron Avalanches and Streamers

    Directory of Open Access Journals (Sweden)

    T. Ficker

    2007-01-01

    Full Text Available We have studied the severe systematic deviations of populations of electron avalanches from the Furry distribution, which has been held to be the statistical law corresponding to them, and a possible explanation has been sought. A  new theoretical concept based on fractal avalanche multiplication has been proposed and is shown to be a convenient candidate for explaining these deviations from Furry statistics. 

  5. Catastrophic avalanches and methods of their control

    Directory of Open Access Journals (Sweden)

    N. A. Volodicheva

    2014-01-01

    Full Text Available Definition of such phenomenon as “catastrophic avalanche” is presented in this arti-cle. Several situations with releases of catastrophic avalanches in mountains of Caucasus, Alps, and Central Asia are investigated. Materials of snow-avalanche ob-servations performed since 1960s at the Elbrus station of the Lomonosov Moscow State University (Central Caucasus were used for this work. Complex-valued measures of engineering protection demonstrating different efficiencies are consid-ered.

  6. Evolution of the average avalanche shape with the universality class.

    Science.gov (United States)

    Laurson, Lasse; Illa, Xavier; Santucci, Stéphane; Tore Tallakstad, Ken; Måløy, Knut Jørgen; Alava, Mikko J

    2013-01-01

    A multitude of systems ranging from the Barkhausen effect in ferromagnetic materials to plastic deformation and earthquakes respond to slow external driving by exhibiting intermittent, scale-free avalanche dynamics or crackling noise. The avalanches are power-law distributed in size, and have a typical average shape: these are the two most important signatures of avalanching systems. Here we show how the average avalanche shape evolves with the universality class of the avalanche dynamics by employing a combination of scaling theory, extensive numerical simulations and data from crack propagation experiments. It follows a simple scaling form parameterized by two numbers, the scaling exponent relating the average avalanche size to its duration and a parameter characterizing the temporal asymmetry of the avalanches. The latter reflects a broken time-reversal symmetry in the avalanche dynamics, emerging from the local nature of the interaction kernel mediating the avalanche dynamics.

  7. Investigation of multi-state charge-storage properties of redox-active organic molecules in silicon-molecular hybrid devices for DRAM and Flash applications

    Science.gov (United States)

    Gowda, Srivardhan Shivappa

    Molecular electronics has recently spawned a considerable amount of interest with several molecules possessing charge-conduction and charge-storage properties proposed for use in electronic devices. Hybrid silicon-molecular technology has the promise of augmenting the current silicon technology and provide for a transitional path to future molecule-only technology. The focus of this dissertation work has been on developing a class of hybrid silicon-molecular electronic devices for DRAM and Flash memory applications utilizing redox-active molecules. This work exploits the ability of molecules to store charges with single-electron precision at room temperature. The hybrid devices are fabricated by forming self-assembled monolayers of redox-active molecules on Si and oxide (SiO2 and HfO2) surfaces via formation of covalent linkages. The molecules possess discrete quantum states from which electrons can tunnel to the Si substrate at discrete applied voltages (oxidation process, cell write), leaving behind a positively charged layer of molecules. The reduction (erase) process, which is the process of electrons tunneling back from Si to the molecules, neutralizes the positively charged molecular monolayer. Hybrid silicon-molecular capacitor test structures were electrically characterized with an electrolyte gate using cyclic voltammetry (CyV) and impedance spectroscopy (CV) techniques. The redox voltages, kinetics (write/erase speeds) and charge-retention characteristics were found to be strongly dependent on the Si doping type and densities, and ambient light. It was also determined that the redox energy states in the molecules communicate with the valence band of the Si substrate. This allows tuning of write and read states by modulating minority carriers in n- and p-Si substrates. Ultra-thin dielectric tunnel barriers (SiO2, HfO2) were placed between the molecules and the Si substrate to augment charge-retention for Flash memory applications. The redox response was

  8. Design optimization of ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Cartiglia, N., E-mail: cartiglia@to.infn.it [INFN Torino (Italy); Arcidiacono, R. [Università del Piemonte Orientale, Novara (Italy); Baselga, M. [Centro Nacional de Microeletronica, IMB-CNM, Barcelona (Spain); Bellan, R. [Università di Torino, Torino (Italy); Boscardin, M. [Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento (Italy); Cenna, F. [INFN Torino (Italy); Dalla Betta, G.F. [Università di Trento, Via Sommarive 9, 38123 Trento (Italy); Fernndez-Martnez, P. [Centro Nacional de Microeletronica, IMB-CNM, Barcelona (Spain); Ferrero, M. [INFN Torino (Italy); Università di Torino, Torino (Italy); Flores, D. [Centro Nacional de Microeletronica, IMB-CNM, Barcelona (Spain); Galloway, Z. [Santa Cruz Institute for Particle Physics UC Santa Cruz, CA 95064 (United States); Greco, V.; Hidalgo, S. [Centro Nacional de Microeletronica, IMB-CNM, Barcelona (Spain); Marchetto, F. [INFN Torino (Italy); Monaco, V. [Università di Torino, Torino (Italy); Obertino, M. [Università del Piemonte Orientale, Novara (Italy); Pancheri, L. [Università di Trento, Via Sommarive 9, 38123 Trento (Italy); Paternoster, G. [Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento (Italy); Picerno, A. [Università di Torino, Torino (Italy); Pellegrini, G. [Centro Nacional de Microeletronica, IMB-CNM, Barcelona (Spain); and others

    2015-10-01

    Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors.

  9. Corrosion and wear behaviour of Al–Mg–Si alloy matrix hybrid composites reinforced with rice husk ash and silicon carbide

    Directory of Open Access Journals (Sweden)

    Kenneth Kanayo Alaneme

    2014-01-01

    Full Text Available The corrosion and wear behaviour of Al–Mg–Si alloy matrix hybrid composites developed with the use of rice husk ash (RHA and silicon carbide (SiC particulates as reinforcements were investigated. RHA and SiC mixed in weight ratios 0:1, 1:3, 1:1, 3:1, and 1:0 were utilized to prepare 5, 7.5 and 10 wt% of the reinforcing phase with Al Mg Si alloy as matrix using double stir casting process. Open circuit corrosion potential (OCP and potentiodynamic polarization measurements were used to study the corrosion behaviour while coefficient of friction was used to assess the wear behaviour of the composites. The corrosion and wear mechanisms were established with the aid of scanning electron microscopy. The results show that the effect of RHA/SiC weight ratio on the corrosion behaviour of the composites in 3.5% NaCl solution was not consistent for the different weight percent of reinforcement (5, 7.5, and 10 wt% used in developing the Al–Mg–Si based composites. It was evident that for most cases the use of hybrid reinforcement of RHA and SiC resulted in improved corrosion resistance of the composites in 3.5% NaCl solution. Preferential dissolution of the more anodic Al–Mg–Si alloy matrix around the Al–Mg–Si matrix/RHA/SiC particle interfaces was identified as the primary corrosion mechanism. The coefficient of friction and consequently the wear resistance of the hybrid composites were comparable to that of the Al–Mg–Si alloy matrix reinforced with only SiC.

  10. Tensile Mechanical Properties and Strengthening Mechanism of Hybrid Carbon Nanotube and Silicon Carbide Nanoparticle-Reinforced Magnesium Alloy Composites

    National Research Council Canada - National Science Library

    Zhou, Xia; Su, Depeng; Wu, Chengwei; Liu, Liming

    2012-01-01

    .... The results showed that grains of the matrix in the AZ91/(CNT + SiC) composites were obviously refined after adding hybrid CNTs and SiC nanoparticles to the AZ91 alloy, and the room-temperature mechanical properties of AZ91/(CNT + SiC...

  11. Hybrids perfluorosulfonic acid ionomer and silicon oxide membrane for application in ion-exchange polymer-metal composite actuators

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    This paper reports a new technique to fabricate an ion-exchange polymer-metal composite (IPMC) actuator. This technique is based on a hybrid organic-inorganic composite membrane. In the fabrication course, silica oxide particles, prepared from hydrolysis of tetraethyl orthosilicate in situ with sol-gel reaction, co-crystallize with perfluorosulfonate acid (PFSA) ionomer. Attenuated total reflectance fourier transform infrared spectroscopy (ATR-FTIR) analyses demonstrate that a highly water-saving hybrid membrane is formed. Measurements of mechanical properties reveal that elastic modulus and hardness of the hybrid membrane are about 2 times compared to a commercial PFSA membrane. Scanning electron microscopy (SEM) results show that the hybrid membrane has a high porosity. Inside the membrane pores, there exists a great quantity of micro scale channels in the range of 100―300 nm. After fabrication of IPMC actuator, an electric current sensor, a force sensor, and a high speed camera are assembled and used to evaluate IPMC performance. It is shown that, compared to an IPMC actuator made from a commercial membrane, the electromechanical performance of the new actuator increases 6―8 times; when it is actuated in air, its stable non-water working time is prolonged for 6―7 times.

  12. Novel synthesis of covalently linked silicon quantum dot–polystyrene hybrid materials: Silicon quantum dot–polystyrene polymers of tunable refractive index

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jin-Kyu; Dung, Mai Xuan; Jeong, Hyun-Dam, E-mail: hdjeong@chonnam.ac.kr

    2014-11-14

    We present a new material design concept, silicon quantum dot (Si QD) polymers, for which surface-functionalized Si QDs can be regarded as a large monomer in the polymers. As a prototypical example, vinyl-functionalized Si QDs, i.e., divinylbenzene-capped Si QDs (DVB-Si QDs) synthesized by adopting divinylbenzene (DVB) capping molecule to the hydride-terminated Si QD (H-Si QD) via Pt-catalyzed hydrosilylation was introduced and polymerized with a styrene monomer to yield Si QD–polystyrene (Si QD–PS) polymers. To demonstrate controllability of the content of Si QDs in the polymers as in conventional polymers, three Si QD content varied Si QD–PS polymers were systematically prepared, named as Si QD–PS-A, Si QD–PS-B, and Si QD–PS-C. It has been demonstrated that the content of the Si QDs in the Si QD–PS polymers was well controlled by the amount of the DVB-Si QD used, as found to be 3.8 wt% (Si QD–PS-A), 10.0 wt% (Si QD–PS-B), 20.0 wt% (Si QD–PS-A), and 37.4 wt% (DVB-Si QD), which was deduced from TGA results. Thin films of the Si QD–PS polymers and the freestanding DVB-Si QDs were successfully fabricated by a spin-coating method and it was found that the refractive index of the thin films dried at 40 °C was linearly increased as the content of the Si QD in the polymers was increased from 1.586 (0 wt%), to 1.590 (3.8 wt%), to 1.592 (10.0 wt%), to 1.592 (20.0 wt%), and to 1.614 (37.4 wt%). - Highlights: • A new material design concept, Si QD polymer, is presented. • Freestanding vinyl-functionalized Si QD was synthesized as a monomer for polymer. • Si QD–PS polymers were synthesized by polymerization of styrene with vinyl-Si QD. • Concentration of Si QD in the polymer was well controlled by amount of Si QD used. • Refractive index of polymer thin films linearly increased with concentration of Si QD.

  13. Nano-Multiplication-Region Avalanche Photodiodes and Arrays

    Science.gov (United States)

    Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

    2008-01-01

    Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be

  14. Porous silicon biomaterials: PSi/Cyclodextrin drug delivery hybrids and PSi/Calcium phosphate bioceramic cell scaffolds

    OpenAIRE

    2013-01-01

    Tesis doctoral inédita, leída en Universidad Autónoma de Madrid, Facultad de Ciencias, Departamento de Física Aplicada. Fecha de lectura: 14-11-2013 Porous silicon (PSi) is an excellent biomaterial given its biocompatibility, biodegradability and bioresorbability. Nevertheless, it is necessary to adapt its properties depending on the specific application. In that sense, two new PSi-based biomaterials were developed to work in the field of drug delivery and cell scaffolds. PSi-b...

  15. Rock avalanches: significance and progress (Invited)

    Science.gov (United States)

    Davies, T. R.

    2013-12-01

    1. The probability distribution of landslide volumes follows a power-law indicating that large rock avalanches dominate the terrestrial sediment supply from mountains, and that their source area morphologies dominate mountain topography. 2. Large rock slope failures (~ 106 m3 or greater) often mobilise into rock avalanches, which can travel extraordinarily long distances with devastating effect. This hypermobility has been the subject of many investigations; we have demonstrated that it can be explained quantitatively and accurately by considering the energetics of the intense rock fragmentation that always occurs during motion of a large rock mass. 3. Study of rock avalanche debris psd shows that the energy used in creating new rock surface area during fragmentation is not lost to surface energy, but is recycled generating a high-frequency elastic energy field that reduces the frictional resistance to motion during runout. 4. Rock avalanches that deposit on glaciers can eventually form large terminal moraines that have no connection with any climatic event; unless these are identified as rock-avalanche-influenced they can confuse palaeoclimatic inferences drawn from moraine ages. Rock-avalanche-derived fines, however, can be identified in moraine debris up to ten thousand years old by the characteristic micron-scale agglomerates that form during intense fragmentation, and which are absent from purely climatically-induced moraines; there is thus a strong case for re-examining existing palaeoclimatic databases to eliminate potentially rock-avalanche-influenced moraine ages. 5. Rock avalanches (especially coseismic ones) are a serious hazard, being very destructive in their own right; they also block river valleys, forming landslide dams and potentially devastating dambreak floods, and subsequent severe decade-scale aggradation of downstream fans and floodplains. Rock avalanches falling into lakes or fiords can cause catastrophic tsunami that pose a serious risk to

  16. Electron avalanches in liquid argon mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J.G.; Dardin, S.M.; Kadel, R.W.; Kadyk, J.A.; Wenzel, W.B.; Peskov, V.

    2004-03-19

    We have observed stable avalanche gain in liquid argon when mixed with small amounts of xenon in the high electric field (>7 MV/cm) near the point of a chemically etched needle in a point-plane geometry. We identify two gain mechanisms, one pressure dependent, and the other independent of the applied pressure. We conclude that the pressure dependent signals are from avalanche gain in gas bubbles at the tip of the needle, while the pressure independent pulses are from avalanche gain in liquid. We measure the decay time spectra of photons from both types of avalanches. The decay times from the pressure dependent pulses decrease (increase) with the applied pressure (high voltage), while the decay times from the pressure independent pulses are approximately independent of pressure or high voltage. For our operating conditions, the collected charge distribution from avalanches is similar for 60 keV or 122 keV photon sources. With krypton additives, instead of Xe, we measure behavior consistent with only the pressure dependent pulses. Neon and TMS were also investigated as additives, and designs for practical detectors were tested.

  17. Deterministically Driven Avalanche Models of Solar Flares

    Science.gov (United States)

    Strugarek, Antoine; Charbonneau, Paul; Joseph, Richard; Pirot, Dorian

    2014-08-01

    We develop and discuss the properties of a new class of lattice-based avalanche models of solar flares. These models are readily amenable to a relatively unambiguous physical interpretation in terms of slow twisting of a coronal loop. They share similarities with other avalanche models, such as the classical stick-slip self-organized critical model of earthquakes, in that they are driven globally by a fully deterministic energy-loading process. The model design leads to a systematic deficit of small-scale avalanches. In some portions of model space, mid-size and large avalanching behavior is scale-free, being characterized by event size distributions that have the form of power-laws with index values, which, in some parameter regimes, compare favorably to those inferred from solar EUV and X-ray flare data. For models using conservative or near-conservative redistribution rules, a population of large, quasiperiodic avalanches can also appear. Although without direct counterparts in the observational global statistics of flare energy release, this latter behavior may be relevant to recurrent flaring in individual coronal loops. This class of models could provide a basis for the prediction of large solar flares.

  18. Deterministically Driven Avalanche Models of Solar Flares

    CERN Document Server

    Strugarek, Antoine; Joseph, Richard; Pirot, Dorian

    2014-01-01

    We develop and discuss the properties of a new class of lattice-based avalanche models of solar flares. These models are readily amenable to a relatively unambiguous physical interpretation in terms of slow twisting of a coronal loop. They share similarities with other avalanche models, such as the classical stick--slip self-organized critical model of earthquakes, in that they are driven globally by a fully deterministic energy loading process. The model design leads to a systematic deficit of small scale avalanches. In some portions of model space, mid-size and large avalanching behavior is scale-free, being characterized by event size distributions that have the form of power-laws with index values, which, in some parameter regimes, compare favorably to those inferred from solar EUV and X-ray flare data. For models using conservative or near-conservative redistribution rules, a population of large, quasiperiodic avalanches can also appear. Although without direct counterparts in the observational global st...

  19. High Resolution Radar Measurements of Snow Avalanches

    Science.gov (United States)

    McElwaine, Jim; Sovilla, Betty; Vriend, Nathalie; Brennan, Paul; Ash, Matt; Keylock, Chris

    2013-04-01

    Geophysical mass flows, such as snow avalanches, are a major hazard in mountainous areas and have a significant impact on the infrastructure, economy and tourism of such regions. Obtaining a thorough understanding of the dynamics of snow avalanches is crucial for risk assessment and the design of defensive structures. However, because the underlying physics is poorly understood there are significant uncertainties concerning current models, which are poorly validated due to a lack of high resolution data. Direct observations of the denser core of a large avalanche are particularly difficult, since it is frequently obscured by the dilute powder cloud. We have developed and installed a phased array FMCW radar system that penetrates the powder cloud and directly images the dense core with a resolution of around 1 m at 50 Hz over the entire slope. We present data from recent avalanches at Vallee de la Sionne that show a wealth of internal structure and allow the tracking of individual fronts, roll waves and surges down the slope for the first time. We also show good agreement between the radar results and existing measurement systems that record data at particular points on the avalanche track.

  20. Side chain engineering of poly-thiophene and its impact on crystalline silicon based hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zellmeier, M.; Rappich, J.; Nickel, N. H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics, Kekuléstr. 5, 12489 Berlin (Germany); Klaus, M.; Genzel, Ch. [Department of Microstructure and Residual Stress Analysis, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Janietz, S. [Department of Polymer Electronics, Fraunhofer Institute for Applied Polymer Research, Geiselbergstr. 69, 14476 Potsdam (Germany); Frisch, J.; Koch, N. [Humboldt Universität zu Berlin, Brook-Taylor-Straße 6, 12489 Berlin (Germany)

    2015-11-16

    The influence of ether groups in the side chain of spin coated regioregular polythiophene derivatives on the polymer layer formation and the hybrid solar cell properties was investigated using electrical, optical, and X-ray diffraction experiments. The polymer layers are of high crystallinity but the polymer with 3 ether groups in the side chain (P3TOT) did not show any vibrational fine structure in the UV-Vis spectrum. The presence of ether groups in the side chains leads to better adhesion resulting in thinner and more homogeneous polymer layers. This, in turn, enhances the electronic properties of the planar c-Si/poly-thiophene hybrid solar cell. We find that the power conversion efficiency increases with the number of ether groups in the side chains, and a maximum power conversion efficiency of η = 9.6% is achieved even in simple planar structures.

  1. Pixelated Geiger-Mode Avalanche Photo-Diode Characterization through Dark Current Measurement

    CERN Document Server

    Amaudruz, Pierre-André; Gilhully, Colleen; Goertzen, Andrew; James, Lloyd; Kozlowski, Piotr; Retière, Fabrice; Shams, Ehsan; Sossi, Vesna; Stortz, Greg; Thiessen, Jonathan D; Thompson, Christopher J

    2013-01-01

    PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic physics experiments, which requires extensive test and operation procedures in order to achieve uniform responses from all the devices. In this paper, we show for two PPD brands, Hamamatsu MPPC and SensL SPM, that the dark noise rate, breakdown voltage and rate of correlated avalanches can be inferred from the sole measure of dark current as a function of operating voltage, hence greatly simplifying the characterization procedure. We introduce a custom electronics system that allows measurement for many devices concurrently, hence allowing rapid testing and monitoring of many devices at low cost. Finally, we show that the dark current of Hamamastu Multi-Pixel Photon Counter (MPPC) is rather independent of temperature at constant operating voltage, hence the current measure...

  2. Omnidirectional Harvesting of Weak Light Using a Graphene Quantum Dot-Modified Organic/Silicon Hybrid Device

    KAUST Repository

    Tsai, Meng-Lin

    2017-04-21

    Despite great improvements in traditional inorganic photodetectors and photovoltaics, more progress is needed in the detection/collection of light at low-level conditions. Traditional photodetectors tend to suffer from high noise when operated at room temperature; therefore, these devices require additional cooling systems to detect weak or dim light. Conventional solar cells also face the challenge of poor light-harvesting capabilities in hazy or cloudy weather. The real world features such varying levels of light, which makes it important to develop strategies that allow optical devices to function when conditions are less than optimal. In this work, we report an organic/inorganic hybrid device that consists of graphene quantum dot-modified poly(3,4-ethylenedioxythiophene) polystyrenesulfonate spin-coated on Si for the detection/harvest of weak light. The hybrid configuration provides the device with high responsivity and detectability, omnidirectional light trapping, and fast operation speed. To demonstrate the potential of this hybrid device in real world applications, we measured near-infrared light scattered through human tissue to demonstrate noninvasive oximetric photodetection as well as characterized the device\\'s photovoltaic properties in outdoor (i.e., weather-dependent) and indoor weak light conditions. This organic/inorganic device configuration demonstrates a promising strategy for developing future high-performance low-light compatible photodetectors and photovoltaics.

  3. Assessment of the Perchertal avalanche in Tyrol, Austria

    OpenAIRE

    KURT, Tayfun

    2014-01-01

    The present study has been conducted to analyze the Perchertal avalanche area near Bärenkopf Mountain, which has several avalanche-prone areas on its slopes, within the area of Pertisau, Tyrol, in Austria. The main focus is on identifying the characteristics of the avalanche process itself to determine the potential risk to endangered objects, which include an important road and a hotel. Another focus is to evaluate the current local hazard map. Based on the dynamic avalanche models (Samos-AT...

  4. Solution processed SiN{sub x}C{sub y}O{sub z} thin films thermally transformed from silicon oxide/melamine hybrid system

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Jaehun [Department of Polymer Science and Engineering, Sungkyunkwan University, 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Fujihara, Kan [KANEKA Corporation, 5-1-1 Torikai-Nishi, Settsu, Osaka 566-007 (Japan); Pu, Lyongsun [KANEKA Corporation, 5-1-1 Torikai-Nishi, Settsu, Osaka 566-007 (Japan); School of Advanced Materials Science and Engineering, Sungkyunkwan University 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Yoo, Ji-Beom [School of Advanced Materials Science and Engineering, Sungkyunkwan University 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Lee, Jun Young; Cho, Sung M.; Lee, Youngkwan [Department of Chemical Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Kim, Seong Woo [Department of Chemical Engineering, Kyonggi University, 94-6 yiui-dong Yeongton-gu, Suwon, Gyeonggi-do 443-760 (Korea, Republic of); Hwang, Taeseon, E-mail: Taeseon.Hwang@unlv.edu [Department of Polymer Science and Engineering, Sungkyunkwan University, 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Mechanical Engineering, University of Nevada, Las Vegas, 4505 Maryland Parkway, Las Vegas, NV 89154 (United States); Nam, Jae-Do, E-mail: jdnam@skku.edu [Department of Polymer Science and Engineering, Sungkyunkwan University, 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2013-07-31

    In this study, a solution-processable precursor of melamine and silicon oxide, was prepared and thermally converted into inorganic thin films of SiN{sub x}C{sub y}O{sub z}. Using tetra-ethoxysilane and hydroxyl-methyl-melamine, a transparent coating with a high loading content of silica of up to 50% was achieved through the hydrolysis/condensation reactions, which provided a transmittance of 85.1% (thickness of 1.5 ± 0.2 μm) and hard coating grade of 4H pencil test. When the silica/melamine coating was further heat-treated up to 900 °C in an inert environment, the organic melamine was converted into an inorganic compound composed of Si, N, C, and O atoms in the form of SiN{sub x}C{sub y}O{sub z}. The relative compositions of films varied with the heat-treatment temperature, e.g., providing SiN{sub 0.03}C{sub 0.59}O{sub 1.87} for the thin film heat-treated at 700 °C. The resulting inorganic thin films were mechanically strong and optically shiny with a low root mean square of roughness (< 1.0 nm) giving dielectric constants varying from 2.75 to 1.82 with heat treatment temperature that could be used as low-k materials in commercialized optoelectronic devices. - Highlights: • A solution-processable dielectric layer was fabricated through sol–gel process. • A fabricated hybrid film has an excellent optical transmittance and hardness. • The hybrid film was converted into an inorganic compound in the form of SiN{sub x}C{sub y}O{sub z}. • The dielectric constant of heat-treated specimen was measured lower than 2.0.

  5. Relating rock avalanche morphology to emplacement processes

    Science.gov (United States)

    Dufresne, Anja; Prager, Christoph; Bösmeier, Annette

    2015-04-01

    The morphology, structure and sedimentological characteristics of rock avalanche deposits reflect both internal emplacement processes and external influences, such as runout path characteristics. The latter is mainly predisposed by topography, substrate types, and hydrogeological conditions. Additionally, the geological setting at the source slope controls, e.g. the spatial distribution of accumulated lithologies and hence material property-related changes in morphology, or the maximum clast size and amount of fines of different lithological units. The Holocene Tschirgant rock avalanche (Tyrol, Austria) resulted from failure of an intensely deformed carbonate rock mass on the southeast face of a 2,370-m-high mountain ridge. The initially sliding rock mass rapidly fragmented as it moved towards the floor of the Inn River valley. Part of the 200-250 x 106 m3 (Patzelt 2012) rock avalanche debris collided with and moved around an opposing bedrock ridge and flowed into the Ötz valley, reaching up to 6.3 km from source. Where the Tschirgant rock avalanche spread freely it formed longitudinal ridges aligned along motion direction as well as smaller hummocks. Encountering high topography, it left runup ridges, fallback patterns (i.e. secondary collapse), and compressional morphology (successively elevated, transverse ridges). Further evidence for the mechanical landslide behaviour is given by large volumes of mobilized valley-fill sediments (polymict gravels and sands). These sediments indicate both shearing and compressional faulting within the rock avalanche mass (forming their own morphological units through, e.g. in situ bulldozing or as distinctly different hummocky terrain), but also indicate extension of the spreading landslide mass (i.e. intercalated/injected gravels encountered mainly in morphological depressions between hummocks). Further influences on its morphology are given by the different lithological units. E.g. the transition from massive dolomite

  6. Adjoint method and runaway electron avalanche

    Science.gov (United States)

    Liu, Chang; Brennan, Dylan P.; Boozer, Allen H.; Bhattacharjee, Amitava

    2017-02-01

    The adjoint method for the study of runaway electron dynamics in momentum space Liu et al (2016 Phys. Plasmas 23 010702) is rederived using the Green’s function method, for both the runaway probability function (RPF) and the expected loss time (ELT). The RPF and ELT obtained using the adjoint method are presented, both with and without the synchrotron radiation reaction force. The adjoint method is then applied to study the runaway electron avalanche. Both the critical electric field and the growth rate for the avalanche are calculated using this fast and novel approach.

  7. Assessing the importance of terrain parameters on glide avalanche release

    Science.gov (United States)

    Peitzsch, Erich H.; Hendrikx, Jordy; Fagre, Daniel B.

    2014-01-01

    Glide snow avalanches are dangerous and difficult to predict. Despite recent research there is still a lack of understanding regarding the controls of glide avalanche release. Glide avalanches often occur in similar terrain or the same locations annually and observations suggest that topography may be critical. Thus, to gain an understanding of the terrain component of these types of avalanches we examined terrain parameters associated with glide avalanche release as well as areas of consistent glide crack formation but no subsequent avalanches. Glide avalanche occurrences visible from the Going-to-the-Sun Road corridor in Glacier National Park, Montana from 2003-2013 were investigated using an avalanche database derived of daily observations each year from April 1 to June 15. This yielded 192 glide avalanches in 53 distinct avalanche paths. Each avalanche occurrence was digitized in a GIS using satellite, oblique, and aerial imagery as reference. Topographical parameters such as area, slope, aspect, elevation and elevation were then derived for the entire dataset utilizing GIS tools and a 10m DEM. Land surface substrate and surface geology were derived from National Park Service Inventory and Monitoring maps and U.S. Geological Survey surface geology maps, respectively. Surface roughness and glide factor were calculated using a four level classification index. . Then, each avalanche occurrence was aggregated to general avalanche release zones and the frequencies were compared. For this study, glide avalanches released in elevations ranging from 1300 to 2700 m with a mean aspect of 98 degrees (east) and a mean slope angle of 38 degrees. The mean profile curvature for all glide avalanches was 0.15 and a plan curvature of -0.01, suggesting a fairly linear surface (i.e. neither convex nor concave). The glide avalanches occurred in mostly bedrock made up of dolomite and limestone slabs and talus deposits with very few occurring in alpine meadows. However, not all glide

  8. Scalable Production of the Silicon-Tin Yin-Yang Hybrid Structure with Graphene Coating for High Performance Lithium-Ion Battery Anodes.

    Science.gov (United States)

    Jin, Yan; Tan, Yingling; Hu, Xiaozhen; Zhu, Bin; Zheng, Qinghui; Zhang, Zijiao; Zhu, Guoying; Yu, Qian; Jin, Zhong; Zhu, Jia

    2017-05-10

    Alloy anodes possessed of high theoretical capacity show great potential for next-generation advanced lithium-ion battery. Even though huge volume change during lithium insertion and extraction leads to severe problems, such as pulverization and an unstable solid-electrolyte interphase (SEI), various nanostructures including nanoparticles, nanowires, and porous networks can address related challenges to improve electrochemical performance. However, the complex and expensive fabrication process hinders the widespread application of nanostructured alloy anodes, which generate an urgent demand of low-cost and scalable processes to fabricate building blocks with fine controls of size, morphology, and porosity. Here, we demonstrate a scalable and low-cost process to produce a porous yin-yang hybrid composite anode with graphene coating through high energy ball-milling and selective chemical etching. With void space to buffer the expansion, the produced functional electrodes demonstrate stable cycling performance of 910 mAh g(-1) over 600 cycles at a rate of 0.5C for Si-graphene "yin" particles and 750 mAh g(-1) over 300 cycles at 0.2C for Sn-graphene "yang" particles. Therefore, we open up a new approach to fabricate alloy anode materials at low-cost, low-energy consumption, and large scale. This type of porous silicon or tin composite with graphene coating can also potentially play a significant role in thermoelectrics and optoelectronics applications.

  9. High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes.

    Science.gov (United States)

    Sandall, Ian C; Xie, Shiyu; Xie, Jingjing; Tan, Chee Hing

    2011-11-01

    The evolution of the dark currents and breakdown at elevated temperatures of up to 450  K are studied using thin AlAsSb avalanche regions. While the dark currents increase rapidly as the temperature is increased, the avalanche gain is shown to only have a weak temperature dependence. Temperature coefficients of breakdown voltage of 0.93 and 1.93  mV/K were obtained from the diodes of 80 and 230  nm avalanche regions (i-regions), respectively. These values are significantly lower than for other available avalanche materials at these temperatures. The wavelength dependence of multiplication characteristics of AlAsSb p-i-n diodes has also been investigated, and it was found that the ionization coefficients for electrons and holes are comparable within the electric field and wavelength ranges measured.

  10. A 1.5k x 1.5k class photon counting HgCdTe linear avalanche photo-diode array for low background space astronomy in the 1-5micron infrared

    Science.gov (United States)

    Hall, Donald

    Under a current award, NASA NNX 13AC13G "EXTENDING THE ASTRONOMICAL APPLICATION OF PHOTON COUNTING HgCdTe LINEAR AVALANCHE PHOTODIODE ARRAYS TO LOW BACKGROUND SPACE OBSERVATIONS" UH has used Selex SAPHIRA 320 x 256 MOVPE L-APD HgCdTe arrays developed for Adaptive Optics (AO) wavefront (WF) sensing to investigate the potential of this technology for low background space astronomy applications. After suppressing readout integrated circuit (ROIC) glow, we have placed upper limits on gain normalized dark current of 0.01 e-/sec at up to 8 volts avalanche bias, corresponding to avalanche gain of 5, and have operated with avalanche gains of up to several hundred at higher bias. We have also demonstrated detection of individual photon events. The proposed investigation would scale the format to 1536 x 1536 at 12um (the largest achievable in a standard reticule without requiring stitching) while incorporating reference pixels required at these low dark current levels. The primary objective is to develop, produce and characterize a 1.5k x 1.5k at 12um pitch MOVPE HgCdTe L-APD array, with nearly 30 times the pixel count of the 320 x 256 SAPHIRA, optimized for low background space astronomy. This will involve: 1) Selex design of a 1.5k x 1.5k at 12um pitch ROIC optimized for low background operation, silicon wafer fabrication at the German XFab foundry in 0.35 um 3V3 process and dicing/test at Selex, 2) provision by GL Scientific of a 3-side close-buttable carrier building from the heritage of the HAWAII xRG family, 3) Selex development and fabrication of 1.5k x 1.5k at 12 um pitch MOVPE HgCdTe L-APD detector arrays optimized for low background applications, 4) hybridization, packaging into a sensor chip assembly (SCA) with initial characterization by Selex and, 5) comprehensive characterization of low background performance, both in the laboratory and at ground based telescopes, by UH. The ultimate goal is to produce and eventually market a large format array, the L

  11. Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

    Energy Technology Data Exchange (ETDEWEB)

    Naquin, Clint; Lee, Mark [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Edwards, Hal; Mathur, Guru; Chatterjee, Tathagata; Maggio, Ken [Texas Instruments, Inc., Richardson, Texas 75243 (United States)

    2014-11-24

    Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (V{sub G}). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on V{sub G} that reduces drain-source current through the QW. These devices establish the feasibility of exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.

  12. Hybrids of organic molecules and flat, oxide-free silicon: high-density monolayers, electronic properties, and functionalization.

    Science.gov (United States)

    Li, Yan; Calder, Steven; Yaffe, Omer; Cahen, David; Haick, Hossam; Kronik, Leeor; Zuilhof, Han

    2012-07-03

    Since the first report of Si-C bound organic monolayers on oxide-free Si almost two decades ago, a substantial amount of research has focused on studying the fundamental mechanical and electronic properties of these Si/molecule surfaces and interfaces. This feature article covers three closely related topics, including recent advances in achieving high-density organic monolayers (i.e., atomic coverage >55%) on oxide-free Si(111) substrates, an overview of progress in the fundamental understanding of the energetics and electronic properties of hybrid Si/molecule systems, and a brief summary of recent examples of subsequent functionalization on these high-density monolayers, which can significantly expand the range of applicability. Taken together, these topics provide an overview of the present status of this active area of research.

  13. Measuring acoustic emissions in an avalanche slope

    Science.gov (United States)

    Reiweger, Ingrid; Schweizer, Jürg

    2014-05-01

    Measurements of acoustic emissions are a common technique for monitoring damage and predicting imminent failure of a material. Within natural hazards it has already been used to successfully predict the break-off of a hanging glacier. To explore the applicability of the acoustic emission (AE) technique for avalanche prediction, we installed two acoustic sensors (with 30 kHz and 60 kHz resonance frequency) in an avalanche prone slope at the Mittelgrat in the Parsenn ski area above Davos, Switzerland. The slope is north-east facing, frequently wind loaded, and approximately 35° steep. The AE signals - in particular the event energy and waiting time distributions - were compared with slope stability. The latter was determined by observing avalanche activity. The results of two winter's measurements yielded that the exponent β of the inverse cumulative distribution of event energy showed a significant drop (from a value of 3.5 to roughly 2.5) at very unstable conditions, i.e. on the three days during our measurement periods when spontaneous avalanches released on our study slope.

  14. Characterization and Monte Carlo simulation of single ion Geiger mode avalanche diodes integrated with a quantum dot nanostructure

    Science.gov (United States)

    Sharma, Peter; Abraham, J. B. S.; Ten Eyck, G.; Childs, K. D.; Bielejec, E.; Carroll, M. S.

    Detection of single ion implantation within a nanostructure is necessary for the high yield fabrication of implanted donor-based quantum computing architectures. Single ion Geiger mode avalanche (SIGMA) diodes with a laterally integrated nanostructure capable of forming a quantum dot were fabricated and characterized using photon pulses. The detection efficiency of this design was measured as a function of wavelength, lateral position, and for varying delay times between the photon pulse and the overbias detection window. Monte Carlo simulations based only on the random diffusion of photo-generated carriers and the geometrical placement of the avalanche region agrees qualitatively with device characterization. Based on these results, SIGMA detection efficiency appears to be determined solely by the diffusion of photo-generated electron-hole pairs into a buried avalanche region. Device performance is then highly dependent on the uniformity of the underlying silicon substrate and the proximity of photo-generated carriers to the silicon-silicon dioxide interface, which are the most important limiting factors for reaching the single ion detection limit with SIGMA detectors. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  15. Simulations of avalanche breakdown statistics: probability and timing

    Science.gov (United States)

    Ng, Jo Shien; Tan, Chee Hing; David, John P. R.

    2010-04-01

    Important avalanche breakdown statistics for Single Photon Avalanche Diodes (SPADs), such as avalanche breakdown probability, dark count rate, and the distribution of time taken to reach breakdown (providing mean time to breakdown and jitter), were simulated. These simulations enable unambiguous studies on effects of avalanche region width, ionization coefficient ratio and carrier dead space on the avalanche statistics, which are the fundamental limits of the SPADs. The effects of quenching resistor/circuit have been ignored. Due to competing effects between dead spaces, which are significant in modern SPADs with narrow avalanche regions, and converging ionization coefficients, the breakdown probability versus overbias characteristics from different avalanche region widths are fairly close to each other. Concerning avalanche breakdown timing at given value of breakdown probability, using avalanche material with similar ionization coefficients yields fast avalanche breakdowns with small timing jitter (albeit higher operating field), compared to material with dissimilar ionization coefficients. This is the opposite requirement for abrupt breakdown probability versus overbias characteristics. In addition, by taking band-to-band tunneling current (dark carriers) into account, minimum avalanche region width for practical SPADs was found to be 0.3 and 0.2 μm, for InP and InAlAs, respectively.

  16. The DELPHI silicon tracker

    CERN Document Server

    Pernegger, H

    1997-01-01

    The DELPHI collaboration has upgraded the Silicon Vertex Detector in order to cope with the physics requirements for LEP200. The new detector consists of a barrel section with three layers of microstrip detectors and a forward extension made of hybrid pixel and large pitch strip detectors. The layout of the detector and the techniques used for the different parts of the new silicon detector shall be described.

  17. An Ion Beam Tracking System based on a Parallel Plate Avalanche Counter

    Directory of Open Access Journals (Sweden)

    Carter I. P.

    2013-12-01

    Full Text Available A pair of twin position-sensitive parallel plate avalanche counters have been developed at the Australian National University as a tracking system to aid in the further rejection of unwanted beam particles from a 6.5 T super conducting solenoid separator named SOLEROO. Their function is to track and identify each beam particle passing through the detectors on an event-by-event basis. In-beam studies have been completed and the detectors are in successful operation, demonstrating the tracking capability. A high efficiency 512-pixelwide-angle silicon detector array will then be integrated with the tracking system for nuclear reactions studies of radioactive ions.

  18. Characterization of a commercially available large area, high detection efficiency single-photon avalanche diode

    CERN Document Server

    Stipčević, Mario; Ursin, Rupert

    2013-01-01

    We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a significant interplay exists between dark counts, detection efficiency, afterpulsing, excess voltage and operating temperature, sometimes requiring a careful optimization tailored for a specific application. We find that a large flat plateau of sensitive area of about 0.5 mm in diameter, a peak quantum efficiency of 73% at 560 nm and timing precision down to 150 ps FWHM are the main distinguishing characteristics of this SPAD.

  19. Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton Irradiation

    Science.gov (United States)

    Becker, Heidi N.; Johnston, Allan H.

    2004-01-01

    InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.

  20. Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton Irradiation

    Science.gov (United States)

    Becker, Heidi N.; Johnston, Allan H.

    2004-01-01

    InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.

  1. Ultra-low noise single-photon detector based on Si avalanche photodiode.

    Science.gov (United States)

    Kim, Yong-Su; Jeong, Youn-Chang; Sauge, Sebastien; Makarov, Vadim; Kim, Yoon-Ho

    2011-09-01

    We report operation and characterization of a lab-assembled single-photon detector based on commercial silicon avalanche photodiodes (PerkinElmer C30902SH, C30921SH). Dark count rate as low as 5 Hz was achieved by cooling the photodiodes down to -80 °C. While afterpulsing increased as the photodiode temperature was decreased, total afterpulse probability did not become significant due to detector's relatively long deadtime in a passively-quenched scheme. We measured photon detection efficiency >50% at 806 nm. © 2011 American Institute of Physics

  2. Hybrid photon detectors

    CERN Document Server

    D'Ambrosio, C

    2003-01-01

    Hybrid photon detectors detect light via vacuum photocathodes and accelerate the emitted photoelectrons by an electric field towards inversely polarized silicon anodes, where they are absorbed, thus producing electron-hole pairs. These, in turn, are collected and generate electronic signals on their ohmic contacts. This review first describes the characteristic properties of the main components of hybrid photon detectors: light entrance windows, photocathodes, and silicon anodes. Then, essential relations describing the trajectories of photoelectrons in electric and magnetic fields and their backscattering from the silicon anodes are derived. Depending on their anode configurations, three families of hybrid photon detectors are presented: hybrid photomultiplier tubes with single anodes for photon counting with high sensitivity and for gamma spectroscopy; multi-anode photon detector tubes with anodes subdivided into square or hexagonal pads for position-sensitive photon detection; imaging silicon pixel array t...

  3. X-ray imaging using avalanche multiplication in amorphous selenium: investigation of depth dependent avalanche noise.

    Science.gov (United States)

    Hunt, D C; Tanioka, Kenkichi; Rowlands, J A

    2007-03-01

    The past decade has seen the swift development of the flat-panel detector (FPD), also known as the active matrix flat-panel imager, for digital radiography. This new technology is applicable to other modalities, such as fluoroscopy, which require the acquisition of multiple images, but could benefit from some improvements. In such applications where more than one image is acquired less radiation is available to form each image and amplifier noise becomes a serious problem. Avalanche multiplication in amorphous selenium (a-Se) can provide the necessary amplification prior to read out so as to reduce the effect of electronic noise of the FPD. However, in direct conversion detectors avalanche multiplication can lead to a new source of gain fluctuation noise called depth dependent avalanche noise. A theoretical model was developed to understand depth dependent avalanche noise. Experiments were performed on a direct imaging system implementing avalanche multiplication in a layer of a-Se to validate the theory. For parameters appropriate for a diagnostic imaging FPD for fluoroscopy the detective quantum efficiency (DQE) was found to drop by as much as 50% with increasing electric field, as predicted by the theoretical model. This drop in DQE can be eliminated by separating the collection and avalanche regions. For example by having a region of low electric field where x rays are absorbed and converted into charge that then drifts into a region of high electric field where the x-ray generated charge undergoes avalanche multiplication. This means quantum noise limited direct conversion FPD for low exposure imaging techniques are a possibility.

  4. Nearest neighbour models for local and regional avalanche forecasting

    Directory of Open Access Journals (Sweden)

    M. Gassner

    2002-01-01

    Full Text Available This paper presents two avalanche forecasting applications NXD2000 and NXD-REG which were developed at the Swiss Federal Institute for Snow and Avalanche Re-search (SLF. Even both are based on the nearest neighbour method they are targeted to different scales. NXD2000 is used to forecast avalanches on a local scale. It is operated by avalanche forecasters responsible for snow safety at snow sport areas, villages or cross country roads. The area covered ranges from 10 km2 up to 100 km2 depending on the climatological homogeneity. It provides the forecaster with ten most similar days to a given situation. The observed avalanches of these days are an indication of the actual avalanche danger. NXD-REG is used operationally by the Swiss avalanche warning service for regional avalanche forecasting. The Nearest Neighbour approach is applied to the data sets of 60 observer stations. The results of each station are then compiled into a map of current and future avalanche hazard. Evaluation of the model by cross-validation has shown that the model can reproduce the official SLF avalanche forecasts in about 52% of the days.

  5. Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)

    Science.gov (United States)

    Bank, Seth; Maddox, Scott J.; Sun, Wenlu; Nair, Hari P.; Campbell, Joe C.

    2015-08-01

    InAs possesses nearly ideal material properties for the fabrication of near- and mid-infrared avalanche photodiodes (APDs), which result in strong electron-initiated impact ionization and negligible hole-initiated impact ionization [1]. Consequently, InAs multiplication regions exhibit several appealing characteristics, including extremely low excess noise factors and bandwidth independent of gain [2], [3]. These properties make InAs APDs attractive for a number of near- and mid-infrared sensing applications including remote gas sensing, light detection and ranging (LIDAR), and both active and passive imaging. Here, we discuss our recent advances in the growth and fabrication of high gain, low noise InAs APDs. Devices yielded room temperature multiplication gains >300, with much reduced (~10x) lower dark current densities. We will also discuss a likely key contributor to our current performance limitations: silicon diffusion into the intrinsic (multiplication) region from the underlying n-type layer during growth. Future work will focus on increasing the intrinsic region thickness, targeting gains >1000. This work was supported by the Army Research Office (W911NF-10-1-0391). [1] A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, "Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes," Applied Physics Letters, vol. 93, p. 111107, 2008. [2] A. R. J. Marshall, A. Krysa, S. Zhang, A. S. Idris, S. Xie, J. P. R. David, and C. H. Tan, "High gain InAs avalanche photodiodes," in 6th EMRS DTC Technical Conference, Edinburgh, Scotland, UK, 2009. [3] S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping," Applied Physics Letters, vol. 101, no. 15, pp. 151124-151124-3, Oct. 2012.

  6. Avalanches in functional materials and geophysics

    CERN Document Server

    Saxena, Avadh; Planes, Antoni

    2017-01-01

    This book provides the state-of-the art of the present understanding of avalanche phenomena in both functional materials and geophysics. The main emphasis of the book is analyzing these apparently different problems within the common perspective of out-of-equilibrium phenomena displaying spatial and temporal complexity that occur in a broad range of scales. Many systems, when subjected to an external force, respond intermittently in the form of avalanches that often span over a wide range of sizes, energies and durations. This is often related to a class of critical behavior characterized by the absence of characteristic scales. Typical examples are magnetization processes, plastic deformation and failure occuring in functional materials. These phenomena share many similarities with seismicity arising from the earth crust failure due to stresses that originate from plate tectonics.

  7. Fractal properties of LED avalanche breakdown

    Directory of Open Access Journals (Sweden)

    Antonina S. Shashkina

    2016-12-01

    Full Text Available The conventional model of the processes occurring in the course of a p–n-junction's partial avalanche breakdown has been analyzed in this paper. Microplasma noise spectra of industrially produced LEDs were compared with those predicted by the model. It was established that the data obtained experimentally on reverse-biased LEDs could not be described in terms of this model. The degree to which the fractal properties were pronounced was shown to be variable by changing the reverse voltage. The discovered fractal properties of microplasma noise can serve as the basis for further studies which are bound to explain the breakdown characteristics of real LEDs and to correct the conventional model of p–n-junction's avalanche breakdown.

  8. Single electron multiplication distribution in GEM avalanches

    CERN Document Server

    Laszlo, Andras; Kiss, Gabor; Varga, Dezso

    2016-01-01

    In this paper measurement results and experimental methodology is presented on the determination of multiplication distributions of avalanches in GEM foils initiated by a single electron. The measurement relies on the amplification of photoelectrons by the GEM under study, which is subsequently amplified in an MWPC. The intrinsic detector resolution, namely the sigma over mean ratio of this distribution is also elaborated. Small gain dependence of the avalanche size is observed in the range of net effective gain of 15 to 100. The distribution has an exponentially decaying tail at large amplitudes, whereas the applied working gas is seen to have a well visible effect on the shape of the multiplication distribution at low amplitudes; or equivalently, the working gas has an influence on the intrinsic detector resolution of GEMs via suppression of the low amplitude responses. A sigma over mean ratio down to 0.75 was reached using neon based mixture, whereas other gases provided an intrinsic detector resolution cl...

  9. Do Neural Avalanches Indicate Criticality After All?

    CERN Document Server

    Dehghani, Mohammad; Shahbazi, Farhad

    2016-01-01

    Neural avalanches in size and duration exhibit a power law distribution illustrating as a straight line when plotted on the logarithmic scales. The power-law exponent is interpreted as the signature of criticality and it is assumed that the resting brain operates near criticality. However, there is no clear evidence that supports this assumption, and even there are extensive research studies conflicting one another. The model of the current paper is an extension of a previous publication wherein we used an integrate-and-fire model on a regular lattice with periodic boundary conditions and introduced the temporal complexity as a genuine signature of criticality. However, in that model the power-law distribution of neural avalanches were manifestation of super-criticality rather than criticality. Here, however, we show that replacing the discrete noise in the model with a Gaussian noise and continuous time solution of the equation leads to coincidence of temporal complexity and spatiotemporal patterns of neural...

  10. Electrothermal simulation of superconducting nanowire avalanche photodetectors

    Science.gov (United States)

    Marsili, Francesco; Najafi, Faraz; Herder, Charles; Berggren, Karl K.

    2011-02-01

    We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.

  11. Shot noise suppression in avalanche photodiodes.

    Science.gov (United States)

    Ma, Feng; Wang, Shuling; Campbell, Joe C

    2005-10-21

    We identify a new shot noise suppression mechanism in a thin (approximately 100 nm) heterostructure avalanche photodiode. In the low-gain regime the shot noise is suppressed due to temporal correlations within amplified current pulses. We demonstrate in a Monte Carlo simulation that the effective excess noise factors can be < 1, and reconcile the apparent conflict between theory and experiments. This shot noise suppression mechanism is independent of known mechanisms such as Coulomb interaction, or reflection at heterojunction interfaces.

  12. Characterization of Advanced Avalanche Photodiodes for Water Vapor Lidar Receivers

    Science.gov (United States)

    Refaat, Tamer F.; Halama, Gary E.; DeYoung, Russell J.

    2000-01-01

    Development of advanced differential absorption lidar (DIAL) receivers is very important to increase the accuracy of atmospheric water vapor measurements. A major component of such receivers is the optical detector. In the near-infrared wavelength range avalanche photodiodes (APD's) are the best choice for higher signal-to-noise ratio, where there are many water vapor absorption lines. In this study, characterization experiments were performed to evaluate a group of silicon-based APD's. The APD's have different structures representative of different manufacturers. The experiments include setups to calibrate these devices, as well as characterization of the effects of voltage bias and temperature on the responsivity, surface scans, noise measurements, and frequency response measurements. For each experiment, the setup, procedure, data analysis, and results are given and discussed. This research was done to choose a suitable APD detector for the development of an advanced atmospheric water vapor differential absorption lidar detection system operating either at 720, 820, or 940 nm. The results point out the benefits of using the super low ionization ratio (SLIK) structure APD for its lower noise-equivalent power, which was found to be on the order of 2 to 4 fW/Hz(sup (1/2)), with an appropriate optical system and electronics. The water vapor detection systems signal-to-noise ratio will increase by a factor of 10.

  13. Silicon/Organic Hybrid Solar Cells with 16.2% Efficiency and Improved Stability by Formation of Conformal Heterojunction Coating and Moisture-Resistant Capping Layer.

    Science.gov (United States)

    He, Jian; Gao, Pingqi; Yang, Zhenhai; Yu, Jing; Yu, Wei; Zhang, Yu; Sheng, Jiang; Ye, Jichun; Amine, Joseph Chen; Cui, Yi

    2017-02-02

    Silicon/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells with 16.2% efficiency and excellent stability are fabricated on pyramid-textured silicon substrates by applying a water-insoluble ester as capping layer. It shows that conformal coating of PEDOT:PSS on textured silicon can greatly improve the junction quality with the main stability failure routes related to the moisture-induced poly(3,4-ethylenedioxythiophene) aggregations and the tunneling silicon oxide autothickening.

  14. Neuronal avalanches in spontaneous activity in vivo.

    Science.gov (United States)

    Hahn, Gerald; Petermann, Thomas; Havenith, Martha N; Yu, Shan; Singer, Wolf; Plenz, Dietmar; Nikolic, Danko

    2010-12-01

    Many complex systems give rise to events that are clustered in space and time, thereby establishing a correlation structure that is governed by power law statistics. In the cortex, such clusters of activity, called "neuronal avalanches," were recently found in local field potentials (LFPs) of spontaneous activity in acute cortex slices, slice cultures, the developing cortex of the anesthetized rat, and premotor and motor cortex of awake monkeys. At present, it is unclear whether neuronal avalanches also exist in the spontaneous LFPs and spike activity in vivo in sensory areas of the mature brain. To address this question, we recorded spontaneous LFPs and extracellular spiking activity with multiple 4 × 4 microelectrode arrays (Michigan Probes) in area 17 of adult cats under anesthesia. A cluster of events was defined as a consecutive sequence of time bins Δt (1-32 ms), each containing at least one LFP event or spike anywhere on the array. LFP cluster sizes consistently distributed according to a power law with a slope largely above -1.5. In two thirds of the corresponding experiments, spike clusters also displayed a power law that displayed a slightly steeper slope of -1.8 and was destroyed by subsampling operations. The power law in spike clusters was accompanied with stronger temporal correlations between spiking activities of neurons that spanned longer time periods compared with spike clusters lacking power law statistics. The results suggest that spontaneous activity of the visual cortex under anesthesia has the properties of neuronal avalanches.

  15. Edge effect on the power law distribution of granular avalanches.

    Science.gov (United States)

    Lorincz, Kinga A; Wijngaarden, Rinke J

    2007-10-01

    Many punctuated phenomena in nature are claimed [e.g., by the theory of self-organized criticality (SOC)] to be power-law distributed. In our experiments on a three-dimensional pile of long-grained rice, we find that by only changing the boundary condition of the system, we switch from such power-law-distributed avalanche sizes to quasiperiodic system-spanning avalanches. Conversely, by removing ledges the incidence of system-spanning avalanches is significantly reduced. This may offer a perspective on new avalanche prevention schemes. In addition, our findings may help to explain why the archetype of SOC, the sandpile, was found to have power-law-distributed avalanches in some experiments, while in other experiments quasiperiodic system-spanning avalanches were found.

  16. Advantages of gated silicon single photon detectors

    Science.gov (United States)

    Legré, Matthieu; Lunghi, Tommaso; Stucki, Damien; Zbinden, Hugo

    2013-05-01

    We present gated silicon single photon detectors based on two commercially available avalanche photodiodes (APDs) and one customised APD from ID Quantique SA. This customised APD is used in a commercially available device called id110. A brief comparison of the two commercial APDs is presented. Then, the charge persistence effect of all of those detectors that occurs just after a strong illumination is shown and discussed.

  17. Monte Carlo investigation of avalanche multiplication process in thin InP avalanche photodiodes

    Institute of Scientific and Technical Information of China (English)

    WANG Gang; MA YuXiang

    2009-01-01

    An ensemble Monte Carlo simulation is presented to investigate the avalanche multiplication process in thin InP avalanche photodiodes (APDs). Analytical band structures are applied to the description of the conduction and valence band, and impact ionization is treated as an additional scattering mecha-nism with the Keldysh formula. Multiplication gain and excess noise factor of InP p~+-i-n~+ APDs aresimulated and obvious excess noise reduction is found in the thinner devices. The effect of dead space on excess noise in thin APD structures is investigated by the distribution of impact ionization events within the multiplication region. It is found that the dead space can suppress the feedback ionization events resulting in a more deterministic avalanche multiplication process and reduce the excess noise in thinner APDs.

  18. Modelling avalanche danger and understanding snow depth variability

    OpenAIRE

    2010-01-01

    This thesis addresses the causes of avalanche danger at a regional scale. Modelled snow stratigraphy variables were linked to [1] forecasted avalanche danger and [2] observed snowpack stability. Spatial variability of snowpack parameters in a region is an additional important factor that influences the avalanche danger. Snow depth and its change during individual snow fall periods are snowpack parameters which can be measured at a high spatial resolution. Hence, the spatial distribution of sn...

  19. Determining avalanche modelling input parameters using terrestrial laser scanning technology

    OpenAIRE

    2013-01-01

    International audience; In dynamic avalanche modelling, data about the volumes and areas of the snow released, mobilized and deposited are key input parameters, as well as the fracture height. The fracture height can sometimes be measured in the field, but it is often difficult to access the starting zone due to difficult or dangerous terrain and avalanche hazards. More complex is determining the areas and volumes of snow involved in an avalanche. Such calculations require high-resolution spa...

  20. Readout electronics for low dark count Geiger mode avalanche photodiodes fabricated in conventional HV-CMOS technologies for future linear colliders

    Energy Technology Data Exchange (ETDEWEB)

    Vilella, E; Arbat, A; Alonso, O; Vila, A; Dieguez, A [Department of Electronics, University of Barcelona (UB) MartI i Franques 1, 08028 Barcelona (Spain); Comerma, A; Trenado, J; Gascon, D; Garrido, L, E-mail: evilella@el.ub.es [Department of Structure and Constituents of Matter, University of Barcelona (UB) MartI i Franques 1, 08028 Barcelona (Spain)

    2011-01-15

    This work presents low noise readout circuits for silicon pixel detectors based on Geiger mode avalanche photodiodes. Geiger mode avalanche photodiodes offer a high intrinsic gain as well as an excellent timing accuracy. In addition, they can be compatible with standard CMOS technologies. However, they suffer from a high intrinsic noise, which induces false counts indistinguishable from real events and represents an increase of the readout electronics area to store the false counts. We have developed new front-end electronic circuitry for Geiger mode avalanche photodiodes in a conventional 0.35 {mu}m HV-CMOS technology based on a gated mode of operation that allows low noise operation. The performance of the pixel detector is triggered and synchronized with the particle beam thanks to the gated acquisition. The circuits allow low reverse bias overvoltage operation which also improves the noise figures. Experimental characterization of the fabricated front-end circuit is presented in this work.

  1. New advances for modelling the debris avalanches

    Science.gov (United States)

    Cuomo, Sabatino; Cascini, Leonardo; Pastor, Manuel; Castorino, Giuseppe Claudio

    2013-04-01

    Flow-like landslides are a major global hazard and they occur worldwide causing a large number of casualties, significant structural damages to property and infrastructures as well as economic losses. When involving open slopes, these landslides often occur in triangular source areas where initial slides turn into avalanches through further failures and/or eventual soil entrainment. This paper deals with the numerical modelling of the propagation stage of debris avalanches which provides information such as the propagation pattern of the mobilized material, its velocity, thickness and run-out distance. In the paper, a "depth integrated" model is used which allows: i) adequately taking into account the irregular topography of real slopes which greatly affect the propagation stage and ii) using a less time consuming model than fully 3D approaches. The used model is named "GeoFlow_SPH" and it was formerly applied to theoretical, experimental and real case histories (Pastor et al., 2009; Cascini et al., 2012). In this work the behavior of debris avalanches is analyzed with special emphasis on the apical angle, one of the main features of this type of landslide, in relation to soil rheology, hillslope geometry and features of triggering area. Furthermore, the role of erosion has been investigated with reference to the uppermost parts of open slopes with a different steepness. These analyses are firstly carried out for simplified benchmark slopes, using both water-like materials (with no shear strength) and debris type materials. Then, three important case studies of Campania region (Cervinara, Nocera Inferiore e Sarno) are analyzed where debris avalanches involved pyroclastic soils originated from the eruptive products of Vesusius volcano. The results achieved for both benchmark slopes and real case histories outline the key role played by the erosion on the whole propagation stage of debris avalanches. The results are particularly satisfactory since they indicate the

  2. Correcting for accidental correlations in saturated avalanche photodiodes

    National Research Council Canada - National Science Library

    Grieve, J A; Chandrasekara, R; Tang, Z; Cheng, C; Ling, A

    2016-01-01

    .... As an example, we provide a detailed high-level model for the behaviour of passively quenched avalanche photodiodes, and demonstrate effective background subtraction at rates commonly associated...

  3. Application of silicon photomultipliers to positron emission tomography.

    Science.gov (United States)

    Roncali, Emilie; Cherry, Simon R

    2011-04-01

    Historically, positron emission tomography (PET) systems have been based on scintillation crystals coupled to photomultipliers tubes (PMTs). However, the limited quantum efficiency, bulkiness, and relatively high cost per unit surface area of PMTs, along with the growth of new applications for PET, offers opportunities for other photodetectors. Among these, small-animal scanners, hybrid PET/MRI systems, and incorporation of time-of-flight information are of particular interest and require low-cost, compact, fast, and magnetic field compatible photodetectors. With high quantum efficiency and compact structure, avalanche photodiodes (APDs) overcome several of the drawbacks of PMTs, but this is offset by degraded signal-to-noise and timing properties. Silicon photomultipliers (SiPMs) offer an alternative solution, combining many of the advantages of PMTs and APDs. They have high gain, excellent timing properties and are insensitive to magnetic fields. At the present time, SiPM technology is rapidly developing and therefore an investigation into optimal design and operating conditions is underway together with detailed characterization of SiPM-based PET detectors. Published data are extremely promising and show good energy and timing resolution, as well as the ability to decode small scintillator arrays. SiPMs clearly have the potential to be the photodetector of choice for some, or even perhaps most, PET systems.

  4. Radiation damage effect on avalanche photodiodes

    CERN Document Server

    Baccaro, S; Cavallari, F; Da Ponte, V; Deiters, K; Denes, P; Diemoz, M; Kirn, Th; Lintern, A L; Longo, E; Montecchi, M; Musienko, Y; Pansart, J P; Renker, D; Reucroft, S; Rosi, G; Rusack, R; Ruuska, D; Stephenson, R; Torbet, M J

    1999-01-01

    Avalanche Photodiodes have been chosen as photon sensors for the electromagnetic calorimeter of the CMS experiment at the LHC. These sensors should operate in the 4T magnetic field of the experiment. Because of the high neutron radiation in the detector extensive studies have been done by the CMS collaboration on the APD neutron radiation damage. The characteristics of these devices after irradiation have been analized, with particular attention to the quantum efficiency and the dark current. The recovery of the radiation induced dark current has been studied carefully at room temperature and at slightly lower and higher temperatures. The temperature dependence of the defects decay-time has been evaluated.

  5. Photon detection with cooled avalanche photodiodes

    Science.gov (United States)

    Robinson, D. L.; Metscher, B. D.

    1987-01-01

    Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5-3 times more sensitive than presently available photomultiplier tubes (PMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than twice that of a PMT were obtained with detector noise levels below 100 counts per second. Higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

  6. Cooled avalanche photodiode used for photon detection

    Science.gov (United States)

    Robinson, Deborah L.; Metscher, Brian D.

    1987-01-01

    Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5 to 3 times more sensitive than presently-available photomultiplier tubes (PPMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than 25 percent were obtained with detector noise levels comparable to the noise of a PMT; higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

  7. Avalanche Photodiode Arrays for Optical Communications Receivers

    Science.gov (United States)

    Srinivasan, M.; Vilnrotter, V.

    2001-01-01

    An avalanche photodiode (APD) array for ground-based optical communications receivers is investigated for the reception of optical signals through the turbulent atmosphere. Kolmogorov phase screen simulations are used to generate realistic spatial distributions of the received optical field. It is shown that use of an APD array for pulse-position modulation detection can improve performance by up to 4 dB over single APD detection in the presence of turbulence, but that photon-counting detector arrays yield even greater gains.

  8. Avalanches in UGe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Lhotel, E. E-mail: lhotel@grenoble.cnrs.fr; Paulsen, C.; Huxley, A.D

    2004-05-01

    In UGe{sub 2} ferromagnetism and superconductivity co-exist for pressures in the range 1.0-1.6 GPa. The magnetic state, however, has several unusual properties. Here we report measurements of hysteresis loops for fields parallel to the easy-axis at low temperature and ambient pressure, measured for two separate UGe{sub 2} single crystals. Steps in the magnetization as the field is changed at low temperature are observed for both crystals. The general phenomenology associated with the steps strongly suggests that they correspond to avalanches of domain-wall motion.

  9. TCAD simulation of Low Gain Avalanche Detectors

    Science.gov (United States)

    Dalal, Ranjeet; Jain, Geetika; Bhardwaj, Ashutosh; Ranjan, Kirti

    2016-11-01

    In the present work, detailed simulation using Technology Computer Aided Design (TCAD) tool, Silvaco for non-irradiated and irradiated LGAD (Low Gain Avalanche Detector) devices has been carried out. The effects of different design parameters and proton irradiation on LGAD operation are discussed in detail. An already published effective two trap bulk damage model is used to simulate the radiation damage without implementing any acceptor removal term. The TCAD simulation for irradiated LGAD devices produce decreasing gain with increasing fluence, similar to the measurement results. The space charge density and electric field distribution are used to illustrate the possible reasons for the degradation of gain of the irradiated LGAD devices.

  10. Avalanche Effect in Improperly Initialized CAESAR Candidates

    Directory of Open Access Journals (Sweden)

    Martin Ukrop

    2016-12-01

    Full Text Available Cryptoprimitives rely on thorough theoretical background, but often lack basic usability features making them prone to unintentional misuse by developers. We argue that this is true even for the state-of-the-art designs. Analyzing 52 candidates of the current CAESAR competition has shown none of them have an avalanche effect in authentication tag strong enough to work properly when partially misconfigured. Although not directly decreasing their security profile, this hints at their security usability being less than perfect. Paper details available at crcs.cz/papers/memics2016

  11. Bilayer avalanche spin-diode logic

    Energy Technology Data Exchange (ETDEWEB)

    Friedman, Joseph S., E-mail: joseph.friedman@u-psud.fr; Querlioz, Damien [Institut d’Electronique Fondamentale, Univ. Paris-Sud, CNRS, 91405 Orsay (France); Fadel, Eric R. [Department of Materials Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wessels, Bruce W. [Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States); Department of Materials Science & Engineering, Northwestern University, Evanston, IL 60208 (United States); Sahakian, Alan V. [Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States); Department of Biomedical Engineering, Northwestern University, Evanston, IL 60208 (United States)

    2015-11-15

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

  12. A cooled avalanche photodiode with high photon detection probability

    Science.gov (United States)

    Robinson, D. L.; Metscher, B. D.

    1986-01-01

    An avalanche photodiode has been operated as a photon-counting detector with 2 to 3 times the sensitivity of currently-available photomultiplier tubes. APD (avalanche photodiodes) detection probabilities that exceed 27% and approach 50% have been measured at an optimum operating temperature which minimizes noise. The sources of noise and their dependence on operating temperature and bias voltage are discussed.

  13. Radiation and Temperature Hard Multi-Pixel Avalanche Photodiodes

    Science.gov (United States)

    Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)

    2017-01-01

    The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.

  14. Validation of DEM prediction for granular avalanches on irregular terrain

    Science.gov (United States)

    Mead, Stuart R.; Cleary, Paul W.

    2015-09-01

    Accurate numerical simulation can provide crucial information useful for a greater understanding of destructive granular mass movements such as rock avalanches, landslides, and pyroclastic flows. It enables more informed and relatively low cost investigation of significant risk factors, mitigation strategy effectiveness, and sensitivity to initial conditions, material, or soil properties. In this paper, a granular avalanche experiment from the literature is reanalyzed and used as a basis to assess the accuracy of discrete element method (DEM) predictions of avalanche flow. Discrete granular approaches such as DEM simulate the motion and collisions of individual particles and are useful for identifying and investigating the controlling processes within an avalanche. Using a superquadric shape representation, DEM simulations were found to accurately reproduce transient and static features of the avalanche. The effect of material properties on the shape of the avalanche deposit was investigated. The simulated avalanche deposits were found to be sensitive to particle shape and friction, with the particle shape causing the sensitivity to friction to vary. The importance of particle shape, coupled with effect on the sensitivity to friction, highlights the importance of quantifying and including particle shape effects in numerical modeling of granular avalanches.

  15. Avalanche Statistics of Driven Granular Slides in a Miniature Mound

    CERN Document Server

    Juanico, D E; Batac, R; Monterola, C

    2008-01-01

    We examine avalanche statistics of rain- and vibration-driven granular slides in miniature soil mounds using experimental and numerical approaches. A crossover from power-law to non power-law avalanche-size statistics is demonstrated as a generic driving rate $\

  16. Avalanches mediate crystallization in a hard-sphere glass.

    Science.gov (United States)

    Sanz, Eduardo; Valeriani, Chantal; Zaccarelli, Emanuela; Poon, Wilson C K; Cates, Michael E; Pusey, Peter N

    2014-01-07

    By molecular-dynamics simulations, we have studied the devitrification (or crystallization) of aged hard-sphere glasses. First, we find that the dynamics of the particles are intermittent: Quiescent periods, when the particles simply "rattle" in their nearest-neighbor cages, are interrupted by abrupt "avalanches," where a subset of particles undergo large rearrangements. Second, we find that crystallization is associated with these avalanches but that the connection is not straightforward. The amount of crystal in the system increases during an avalanche, but most of the particles that become crystalline are different from those involved in the avalanche. Third, the occurrence of the avalanches is a largely stochastic process. Randomizing the velocities of the particles at any time during the simulation leads to a different subsequent series of avalanches. The spatial distribution of avalanching particles appears random, although correlations are found among avalanche initiation events. By contrast, we find that crystallization tends to take place in regions that already show incipient local order.

  17. Avalanche behavior of power MOSFETs under different temperature conditions

    Institute of Scientific and Technical Information of China (English)

    Lu Jiang; Wang Lixin; Lu Shuojin; Wang Xuesheng; Han Zhengsheng

    2011-01-01

    The ability of high-voltage power MOSFETs to withstand avalanche events under different temperature conditions are studied by experiment and two-dimensional device simulation. The experiment is performed to investigate dynamic avalanche failure behavior of the domestic power MOSFETs which can occur at the rated maximum operation temperature range (-55 to 150 ℃). An advanced ISE TCAD two-dimensional mixed mode simulator with thermodynamic non-isothermal model is used to analyze the avalanche failure mechanism. The unclamped inductive switching measurement and simulation results show that the parasitic components and thermal effect inside the device will lead to the deterioration of the avalanche reliability of power MOSFETs with increasing temperature. The main failure mechanism is related to the parasitic bipolar transistor activity during the occurrence of the avalanche behavior.

  18. Recent Sand Avalanching on Rabe Crater Dunes

    Science.gov (United States)

    2000-01-01

    Dark streaks on the steep, down-wind slopes of sand dunes in Rabe Crater are seen at several locations in this Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image. These streaks indicate relatively recent (i.e., in the past few years or less) movement of sand down these slopes.Sand dunes move forward by the combined action of wind that drives sand up the shallow slope on the windward side of the dune (in this case, the slopes that face toward the lower right) and the avalanching of this sand down the steeper, lee-side slope. The steep slope is also known as the slip face. The dark streaks indicated by arrows are evidence for sand avalanches that occurred within a few months or years of the time when the picture was taken in March 1999. Other streaks which are seen criss-crossing the dunes may be the result of passing dust devils. This image is illuminated from the upper left and located in Rabe Crater of the Hellespontus-Noachis region near 44.2oS, 325.6oW.

  19. Disordered artificial spin ices: Avalanches and criticality (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Reichhardt, Cynthia J. Olson, E-mail: cjrx@lanl.gov; Chern, Gia-Wei; Reichhardt, Charles [Center for Nonlinear Studies and Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Libál, Andras [Faculty of Mathematics and Computer Science, Babes-Bolyai University, RO-400591 Cluj-Napoca (Romania)

    2015-05-07

    We show that square and kagome artificial spin ices with disconnected islands exhibit disorder-induced nonequilibrium phase transitions. The critical point of the transition is characterized by a diverging length scale and the effective spin reconfiguration avalanche sizes are power-law distributed. For weak disorder, the magnetization reversal is dominated by system-spanning avalanche events characteristic of a supercritical regime, while at strong disorder, the avalanche distributions have subcritical behavior and are cut off above a length scale that decreases with increasing disorder. The different type of geometrical frustration in the two lattices produces distinct forms of critical avalanche behavior. Avalanches in the square ice consist of the propagation of locally stable domain walls separating the two polarized ground states, and we find a scaling collapse consistent with an interface depinning mechanism. In the fully frustrated kagome ice, however, the avalanches branch strongly in a manner reminiscent of directed percolation. We also observe an interesting crossover in the power-law scaling of the kagome ice avalanches at low disorder. Our results show that artificial spin ices are ideal systems in which to study a variety of nonequilibrium critical point phenomena as the microscopic degrees of freedom can be accessed directly in experiments.

  20. 溶胶-凝胶法制备有机硅/SiO2杂化材料的研究进展%Research on Organic Silicone/SiO2 Hybrid Materials Prepared by the Method of Sol-gel

    Institute of Scientific and Technical Information of China (English)

    杨晓东; 刘光明

    2012-01-01

    介绍了溶胶-凝胶法制备有机硅/SiO2杂化材料的原理与工艺,综述了有机硅/SiO2杂化材料在耐热材料、腐蚀防护材料、光学材料领域的应用研究情况.使用溶胶-凝胶法制备的有机硅/SiO2杂化材料作为一种全硅体系,很好地结合了有机硅和纳米SiO2的优势,具有很好的发展前景.%The principle and preparation process of organic silicone/SiO2 hybrid materials prepared by the method of sol-gel were described. The applied research of organic silicone/SiO2 hybrid materials in the field of heat-resistant materials, corrosion protection and optical materials were summarized. The organic silicone/SiO2 hybrid materials prepared by the sol-gel as an all-silicon system combined the advantage of the organic silicone and nano-SiO2, which render it a promising material.

  1. Weak avalanche discrimination for gated-mode single-photon avalanche photodiodes.

    Science.gov (United States)

    Cho, Seok-Beom; Kang, Sae-Kyoung

    2011-09-12

    The after-pulsing effect is a common problem that needs to be overcome for high-speed single-photon detection based on gated-mode single-photon avalanche photodiodes (SPADs). This paper presents a simple and practical method for suppression of the after-pulsing probability using an auxiliary signal to discriminate quite weak avalanches. The detection efficiency and after-pulse probability of an InGaAs/InP SPAD are investigated with a 10 MHz gating for conventional and proposed methods, and a sharp decrease of after-pulse probability is demonstrated with the application of the proposed method. At a gating frequency of 100 MHz, a detection efficiency of 10.4% is achieved with an after-pulse probability of 5.6% without dead time.

  2. Statistical analyses support power law distributions found in neuronal avalanches.

    Directory of Open Access Journals (Sweden)

    Andreas Klaus

    Full Text Available The size distribution of neuronal avalanches in cortical networks has been reported to follow a power law distribution with exponent close to -1.5, which is a reflection of long-range spatial correlations in spontaneous neuronal activity. However, identifying power law scaling in empirical data can be difficult and sometimes controversial. In the present study, we tested the power law hypothesis for neuronal avalanches by using more stringent statistical analyses. In particular, we performed the following steps: (i analysis of finite-size scaling to identify scale-free dynamics in neuronal avalanches, (ii model parameter estimation to determine the specific exponent of the power law, and (iii comparison of the power law to alternative model distributions. Consistent with critical state dynamics, avalanche size distributions exhibited robust scaling behavior in which the maximum avalanche size was limited only by the spatial extent of sampling ("finite size" effect. This scale-free dynamics suggests the power law as a model for the distribution of avalanche sizes. Using both the Kolmogorov-Smirnov statistic and a maximum likelihood approach, we found the slope to be close to -1.5, which is in line with previous reports. Finally, the power law model for neuronal avalanches was compared to the exponential and to various heavy-tail distributions based on the Kolmogorov-Smirnov distance and by using a log-likelihood ratio test. Both the power law distribution without and with exponential cut-off provided significantly better fits to the cluster size distributions in neuronal avalanches than the exponential, the lognormal and the gamma distribution. In summary, our findings strongly support the power law scaling in neuronal avalanches, providing further evidence for critical state dynamics in superficial layers of cortex.

  3. Statistical analyses support power law distributions found in neuronal avalanches.

    Science.gov (United States)

    Klaus, Andreas; Yu, Shan; Plenz, Dietmar

    2011-01-01

    The size distribution of neuronal avalanches in cortical networks has been reported to follow a power law distribution with exponent close to -1.5, which is a reflection of long-range spatial correlations in spontaneous neuronal activity. However, identifying power law scaling in empirical data can be difficult and sometimes controversial. In the present study, we tested the power law hypothesis for neuronal avalanches by using more stringent statistical analyses. In particular, we performed the following steps: (i) analysis of finite-size scaling to identify scale-free dynamics in neuronal avalanches, (ii) model parameter estimation to determine the specific exponent of the power law, and (iii) comparison of the power law to alternative model distributions. Consistent with critical state dynamics, avalanche size distributions exhibited robust scaling behavior in which the maximum avalanche size was limited only by the spatial extent of sampling ("finite size" effect). This scale-free dynamics suggests the power law as a model for the distribution of avalanche sizes. Using both the Kolmogorov-Smirnov statistic and a maximum likelihood approach, we found the slope to be close to -1.5, which is in line with previous reports. Finally, the power law model for neuronal avalanches was compared to the exponential and to various heavy-tail distributions based on the Kolmogorov-Smirnov distance and by using a log-likelihood ratio test. Both the power law distribution without and with exponential cut-off provided significantly better fits to the cluster size distributions in neuronal avalanches than the exponential, the lognormal and the gamma distribution. In summary, our findings strongly support the power law scaling in neuronal avalanches, providing further evidence for critical state dynamics in superficial layers of cortex.

  4. IFKIS a basis for organizational measures in avalanche risk management

    Science.gov (United States)

    Bründl, M.; Etter, H.-J.; Klingler, Ch.; Steiniger, M.; Rhyner, J.; Ammann, W.

    2003-04-01

    The avalanche winter 1999 in Switzerland showed that the combination of protection measures like avalanche barriers, hazard zone mapping, artificial avalanche release and organisational measures (closure of roads, evacuation etc.) proved to perform well. However, education as well as information and communication between the involved organizations proved to be a weak link in the crisis management. In the first part of the project IFKIS we developed a modular education and training course program for security responsibles of settlements and roads. In the second part an information system was developed which improves on the one hand the information fluxes between the national center for avalanche forecasting, the Swiss Federal Institute for Snow and Avalanche Research SLF, and the local forecasters. On the other hand the communication between the avalanche security services in the communities can be enhanced. During the last two years an information system based on Internet technology has been developed for this purpose. This system allows the transmission of measured data and observations to a central database at SLF and visualization of the data for different users. It also provides the possibility to exchange information on organizational measures like closure of roads, artificial avalanche release etc. on a local and regional scale. This improves the information fluxes and the coordination of safety-measures because all users, although at different places, are on the same information level. Inconsistent safety-measures can be avoided and information and communication concerning avalanche safety becomes much more transparent for all persons involved in hazard management. The training program as well the concept for the information-system are important basics for an efficient avalanche risk management but also for other natural processes and catastrophes.

  5. Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Y.; Yun, Y. B. [Yonsei University, Seoul (Korea, Republic of); Ha, J. M. [Yonsei University, Seoul (Korea, Republic of); Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Lee, J. S.; Yoon, Y. S. [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Eun, J. W. [Namseoul University, Cheonan (Korea, Republic of)

    2012-05-15

    A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

  6. Stratigraphic reconstruction of two debris avalanche deposits at Colima Volcano (Mexico): Insights into pre-failure conditions and climate influence

    Science.gov (United States)

    Roverato, M.; Capra, L.; Sulpizio, R.; Norini, G.

    2011-10-01

    Throughout its history, Colima Volcano has experienced numerous partial edifice collapses with associated emplacement of debris avalanche deposits of contrasting volume, morphology and texture. A detailed stratigraphic study in the south-eastern sector of the volcano allowed the recognition of two debris avalanche deposits, named San Marcos (> 28,000 cal yr BP, V = ~ 1.3 km 3) and Tonila (15,000-16,000 cal yr BP, V = ~ 1 km 3 ). This work sheds light on the pre-failure conditions of the volcano based primarily on a detailed textural study of debris avalanche deposits and their associated pyroclastic and volcaniclastic successions. Furthermore, we show how the climate at the time of the Tonila collapse influenced the failure mechanisms. The > 28,000 cal yr BP San Marcos collapse was promoted by edifice steep flanks and ongoing tectonic and volcanotectonic deformation, and was followed by a magmatic eruption that emplaced pyroclastic flow deposits. In contrast, the Tonila failure occurred just after the Last Glacial Maximum (22,000-18,000 cal BP) and, in addition to the typical debris avalanche textural characteristics (angular to sub-angular clasts, coarse matrix, jigsaw fit) it shows a hybrid facies characterized by debris avalanche blocks embedded in a finer, homogenous and partially cemented matrix, a texture more characteristic of debris flow deposits. The Tonila debris avalanche is directly overlain by a 7-m thick hydromagmatic pyroclastic succession. Massive debris flow deposits, often more than 10 m thick and containing large amounts of tree trunk logs, represent the top unit in the succession. Fluvial deposits also occur throughout all successions; these represent periods of highly localized stream reworking. All these lines of evidence point to the presence of water in the edifice prior to the Tonila failure, suggesting it may have been a weakening factor. The Tonila failure appears to represent an anomalous event related to the particular climatic

  7. III-V alloy heterostructure high speed avalanche photodiodes

    Science.gov (United States)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  8. Characterization of avalanche photodiodes for lidar atmospheric return signal detectors

    Science.gov (United States)

    Antill, C. W., Jr.; Holloway, R. M.

    1988-01-01

    Results are presented from tests to characterize noise, dark current, overload, and gain versus bias, relationships of ten avalanche photodiodes. The advantages of avalanche photodiodes over photomultiplier tubes for given laser wavelengths and return signal amplitudes are outlined. The relationship between responsivity and temperature and dark current and temperature are examined. Also, measurements of the noise equivalent power, the excess noise factor, and linearity are given. The advantages of using avalanche photodiodes in the Lidar Atmospheric Sensing Experiment and the Lidar In-Space Technology Experiment are discussed.

  9. Anthropogenic effect on avalanche and debris flow activity

    Directory of Open Access Journals (Sweden)

    S. A. Sokratov

    2013-01-01

    Full Text Available The paper presents examples of the change in snow avalanches and debris flows activity due to the anthropogenic pressure on vegetation and relief. The changes in dynamical characteristics of selected snow avalanches and debris flows due to the anthropogenic activity are quantified. The conclusion is made that the anthropogenic effects on the snow avalanches and debris flows activity are more pronounced than the possible effects of the climate change. The necessity is expressed on the unavoidable changes of the natural environment as the result of a construction and of use of the constructed infrastructure to be account for in corresponding planning of the protection measures.

  10. Seeded excitation avalanches in off-resonantly driven Rydberg gases

    CERN Document Server

    Simonelli, Cristiano; Masella, Guido; Asteria, Luca; Arimondo, Ennio; Ciampini, Donatella; Morsch, Oliver

    2016-01-01

    We report an experimental investigation of the facilitated excitation dynamics in off-resonantly driven Rydberg gases by separating the initial off-resonant excitation phase from the facilitation phase, in which successive facilitation events lead to excitation avalanches. We achieve this by creating a controlled number of initial seed excitations. Greater insight into the avalanche mechanism is obtained from an analysis of the full counting distributions. We also present simple mathematical models and numerical simulations of the excitation avalanches that agree well with our experimental results.

  11. Avalanche of particles in evaporating coffee drops

    CERN Document Server

    Marin, Alvaro G; Snoeijer, Jacco; Lohse, Detlef

    2010-01-01

    The pioneering work of Deegan et al. [Nature 389, (1997)] showed how a drying sessile droplet suspension of particles presents a maximum evaporating flux at its contact line which drags liquid and particles creating the well known coffee stain ring. In this Fluid Dynamics Video, measurements using micro Particle Image Velocimetry and Particle Tracking clearly show an avalanche of particles being dragged in the last moments, for vanishing contact angles and droplet height. This explains the different characteristic packing of the particles in the layers of the ring: the outer one resembles a crystalline array, while the inner one looks more like a jammed granular fluid. Using the basic hydrodynamic model used by Deegan et al. [Phys. Rev. E 62, (2000)] it will be shown how the liquid radial velocity diverges as the droplet life comes to an end, yielding a good comparison with the experimental data.

  12. Avalanche photodiodes now and possible developments

    CERN Document Server

    Britvitch, I; Ingram, Q; Kuznetsov, A; Musienko, Y; Renker, D; Reucroft, S; Sakhelashvili, T M; Swain, J

    2004-01-01

    Avalanche Photodiodes (APDs) are now out of their infancy and are used in large numbers in the electromagnetic calorimeter of CMS where they have to stand the extremely hostile environment of LHC. This type - with smaller sensitive area and arranged in monolithic arrays - is an excellent candidate for the read out of scintillating crystals in medical imaging and a PET scanner operates already successfully since more than 3 years. We present the properties of the device used in CMS and possible improvements of the structure, which could open the door for new applications. Operating APDs at low temperatures or in Geiger mode will allow single photon counting and in future they could replace photomultiplier tubes.

  13. Overspill avalanching in a dense reservoir network

    CERN Document Server

    Mamede, G L; Schneider, C M; de Araújo, J C; Herrmann, H J

    2012-01-01

    Sustainability of communities, agriculture, and industry is strongly dependent on an effective storage and supply of water resources. In some regions the economic growth has led to a level of water demand which can only be accomplished through efficient reservoir networks. Such infrastructures are not always planned at larger scale but rather made by farmers according to their local needs of irrigation during droughts. Based on extensive data from the upper Jaguaribe basin, one of the world's largest system of reservoirs, located in the Brazilian semiarid northeast, we reveal that surprisingly it self-organizes into a scale-free network exhibiting also a power-law in the distribution of the lakes and avalanches of discharges. With a new self-organized-criticality-type model we manage to explain the novel critical exponents. Implementing a flow model we are able to reproduce the measured overspill evolution providing a tool for catastrophe mitigation and future planning.

  14. Lautaret avalanche test site: outcomes from the 11th april 2012 event

    OpenAIRE

    2012-01-01

    International audience; The Lautaret full-scale avalanche test site has been used by Cemagref-Irstea since the early 70's. The first studies were dedicated to avalanche released systems. Later, experiments focused on avalanche dynamics and avalanche impact pressures both in relation with the fundamental knowledge of snow flow rheology and the engineering of defense structures and avalanche hazard zoning. Recent instrumentation developments now provide rich-documented in situ measurements of a...

  15. Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET

    CERN Document Server

    Koyama, Akihiro; Takahashi, Hiroyuki; Orita, Tadashi; Arai, Yasuo; Kurachi, Ikuo; Miyoshi, Toshinobu; Nio, Daisuke; Hamasaki, Ryutaro

    2015-01-01

    To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche multiplication. However higher gain of SPAD seems very attractive, photon detection efficiency per unit area is low. This weak point is mainly caused by Geiger avalanche mechanism. To overcome these difficulties, we designed Pixelated Linear Avalanche Integration Detector using Silicon on Insulator technology (SOI-Plaid). To avoid dark count noise and dead time comes from quench circuit, we are planning to use APD in linear multiplication mode. SOI technology enables laminating readout circuit and APD layer, and high-speed and low-noise signal reading regardless smaller gain of linear APD. This study shows design of linear APD by using SOI fabrication process. We designed test element group (TEG) of linear APD and inspected optimal structure of linear APD.

  16. Interplanetary Space Weather Effects on Lunar Reconnaissance Orbiter Avalanche Photodiode Performance

    Science.gov (United States)

    Clements, E. B.; Carlton, A. K.; Joyce, C. J.; Schwadron, N. A.; Spence, H. E.; Sun, X.; Cahoy, K.

    2016-01-01

    Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

  17. Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection.

    Science.gov (United States)

    Hayden, Oliver; Agarwal, Ritesh; Lieber, Charles M

    2006-05-01

    Integrating nanophotonics with electronics could enhance and/or enable opportunities in areas ranging from communications and computing to novel diagnostics. Light sources and detectors are important elements for integration, and key progress has been made using semiconducting nanowires and carbon nanotubes to yield electrically driven sources and photoconductor detectors. Detection with photoconductors has relatively poor sensitivity at the nanometre scale, and thus large amplification is required to detect low light levels and ultimately single photons with reasonable response time. Here, we report avalanche multiplication of the photocurrent in nanoscale p-n diodes consisting of crossed silicon-cadmium sulphide nanowires. Electrical transport and optical measurements demonstrate that the nanowire avalanche photodiodes (nanoAPDs) have ultrahigh sensitivity with detection limits of less than 100 photons, and subwavelength spatial resolution of at least 250 nm. Crossed nanowire arrays also show that nanoAPDs are reproducible and can be addressed independently without cross-talk. NanoAPDs and arrays could open new opportunities for ultradense integrated systems, sensing and imaging applications.

  18. Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

    Science.gov (United States)

    Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2017-07-10

    We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

  19. First prototypes of two-tier avalanche pixel sensors for particle detection

    Science.gov (United States)

    Pancheri, L.; Brogi, P.; Collazuol, G.; Dalla Betta, G.-F.; Ficorella, A.; Marrocchesi, P. S.; Morsani, F.; Ratti, L.; Savoy-Navarro, A.

    2017-02-01

    In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150 nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16 pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m2 have a median dark count rate of 3 kHz at 3.3 V excess bias and a breakdown voltage non-uniformity lower than 20 mV.

  20. Interplanetary Space Weather Effects on Lunar Reconnaissance Orbiter Avalanche Photodiode Performance

    Science.gov (United States)

    Clements, E. B.; Carlton, A. K.; Joyce, C. J.; Schwadron, N. A.; Spence, H. E.; Sun, X.; Cahoy, K.

    2016-01-01

    Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

  1. Single photon avalanche detectors: prospects of new quenching and gain mechanisms

    Directory of Open Access Journals (Sweden)

    Hall David

    2015-11-01

    Full Text Available While silicon single-photon avalanche diodes (SPAD have reached very high detection efficiency and timing resolution, their use in fibre-optic communications, optical free space communications, and infrared sensing and imaging remains limited. III-V compounds including InGaAs and InP are the prevalent materials for 1550 nm light detection. However, even the most sensitive 1550 nm photoreceivers in optical communication have a sensitivity limit of a few hundred photons. Today, the only viable approach to achieve single-photon sensitivity at 1550 nm wavelength from semiconductor devices is to operate the avalanche detectors in Geiger mode, essentially trading dynamic range and speed for sensitivity. As material properties limit the performance of Ge and III-V detectors, new conceptual insight with regard to novel quenching and gain mechanisms could potentially address the performance limitations of III-V SPADs. Novel designs that utilise internal self-quenching and negative feedback can be used to harness the sensitivity of single-photon detectors,while drastically reducing the device complexity and increasing the level of integration. Incorporation of multiple gain mechanisms, together with self-quenching and built-in negative feedback, into a single device also hold promise for a new type of detector with single-photon sensitivity and large dynamic range.

  2. Hybrid membranes PVA/silicon for use in fuel cells; Membranas hibridas de PVA/silica para aplicacao em celula a combustivel

    Energy Technology Data Exchange (ETDEWEB)

    Aguiar, Liz C.V. de; Almeida, Raquel D. de; Gomes, Ailton de S. [Universidade Federal do Rio de Janeiro - UFRJ, Instituto de Macromoleculas Professora Eloisa Mano - IMA, RJ (Brazil)], e-mail: lizcontino@ima.ufrj.br; Ramos Filho, Florencio G. de [Centro Universitario Estadual da Zona Oeste - UEZO, Rio de Janeiro, RJ (Brazil)

    2011-07-01

    Hybrids organic-inorganic membranes PVA-silica have been prepared using sol-gel process in situ with the objective of study the influence of inorganic particles incorporation on the water uptake, pervaporation and proton conductivity of PVA membranes. The silica was constituted of mercaptopropyltrimethoxysilane (MPTMS) with or without the mixture with the tetra ethoxysilane (TEOS). The hybrids membranes were oxidated to convert the -SH groups in -SO{sub 3}H groups, becoming them proton conducting. The hybrids membranes not oxidated showed lesser water uptake and pervaporated material, probably, due to the formation of crosslink that restricted the swell of the PVA membrane. The protonic conductivity of the hybrid membranes after the oxidation was up to 26 times bigger than of the membrane not oxidated. (author)

  3. A facile synthesis of C{sub 60}-organosilicon hybrid polymers: Considering their tunable optical properties for spin-on-silicon hardmask materials

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jin-Kyu; Dao, Tung Duy; Kim, Ye-Seul; Jeong, Hyun-Dam, E-mail: hdjeong@chonnam.ac.kr

    2016-09-15

    Organic-inorganic hybrid materials with high refractive index have attracted considerable attention for many optoelectronic applications, including spin-on-type hardmask for ArF lithography (193 nm). In this study, we demonstrate the synthesis of a C{sub 60}-embedded organosilicon hybrid polymer, C{sub 60}-embedded poly-xylene-hexamethyltrisiloxane hybrid (C{sub 60}-PXS), of tunable optical properties. C{sub 60} was covalently bonded to the PXS backbone through Pt-catalyzed hydrosilylation, in which the PXS was formed possibly by unexpected transition metal-catalyzed benzylic C−H silylation and oxygenation of the o-xylene. The C{sub 60}-PXS thin films fabricated using a spin-coating method showed much higher refractive index by 5–22% according to the curing temperatures, than the PXS thin films containing no C{sub 60}. In particular, the C{sub 60}-PXS thin film cured at 350 °C showed the refractive index (n) and extinction coefficient (k) at 193 nm to be 1.61 and 0.29 that are very close to the optimum values for the Si-hardmask. This implies the high applicability of the C{sub 60}-embedded organosilicon hybrid polymer, C{sub 60}-PXS, for the spin-on Si-hardmask in ArF lithography. - Highlights: • A facile synthetic route for C{sub 60}-embedded organosilicon hybrid polymer was presented. • The hybrid polymer showed much higher refractive index than the polymer without C{sub 60}. • The hybrid polymer is highly applicable for Si-hardmask in terms of optical properties. • It is believed that the properties of the hybrid polymer can be further optimized.

  4. A cooled avalanche photodiode detector for X-ray magnetic diffraction experiments

    CERN Document Server

    Kishimoto, S; Ito, M

    2001-01-01

    A cooled avalanche photodiode (APD) detector was developed for X-ray magnetic diffraction experiments. A stack of four silicon APDs was cooled down to 243 K by a thermoelectric cooler. The energy widths of 0.89 and 1.55 keV (FWHM) were obtained for 8.05 keV X-rays at 1x10 sup 6 s sup - sup 1 and for 16.53 keV X-rays at 2x10 sup 6 s sup - sup 1 , respectively. Test measurements of X-ray magnetic diffraction were executed using a terbium single crystal and white synchrotron radiation. A peak width of (1 0 3) reflection (5.4 keV) was roughly three times wider than that with a high-purity germanium detector.

  5. Design and fabrication of an optimum peripheral region for low gain avalanche detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fernández-Martínez, Pablo; Flores, D., E-mail: david.flores@imb-cnm.csic.es; Hidalgo, S.; Greco, V.; Merlos, A.; Pellegrini, G.; Quirion, D.

    2016-06-11

    Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. This work deals with the critical technological aspects required to optimize the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral region improvement are also provided.

  6. Design and Fabrication of an Optimum Peripheral Region for Low Gain Avalanche Detectors

    CERN Document Server

    Fernandez-Martinez, Pablo; Hidalgo, Salvador; Greco, Virginia; Merlos, Angel; Pellegrini, Giulio; Quirion, David

    2015-01-01

    Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. This work deals with the critical technological aspects when optimising the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral...

  7. SiC Avalanche Photodiodes and Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Aymont Technology, Inc. (Aymont) will demonstrate the feasibility of SiC p-i-n avalanche photodiodes (APD) arrays. Aymont will demonstrate 4 x 4 arrays of 2 mm2 APDs...

  8. Relative degradation of near infrared avalanche photodiodes from proton irradiation

    Science.gov (United States)

    Becker, Heidi; Johnston, Allan H.

    2004-01-01

    InGaAs and Ge avalanche photodiodes are compared for the effects of 63-MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.

  9. Relative degradation of near infrared avalanche photodiodes from proton irradiation

    Science.gov (United States)

    Becker, Heidi; Johnston, Allan H.

    2004-01-01

    InGaAs and Ge avalanche photodiodes are compared for the effects of 63-MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.

  10. Non-linear behaviour of large-area avalanche photodiodes

    CERN Document Server

    Fernandes, L M P; Monteiro, C M B; Santos, J M; Morgado, R E

    2002-01-01

    The characterisation of photodiodes used as photosensors requires a determination of the number of electron-hole pairs produced by scintillation light. One method involves comparing signals produced by X-ray absorptions occurring directly in the avalanche photodiode with the light signals. When the light is derived from light-emitting diodes in the 400-600 nm range, significant non-linear behaviour is reported. In the present work, we extend the study of the linear behaviour to large-area avalanche photodiodes, of Advanced Photonix, used as photosensors of the vacuum ultraviolet (VUV) scintillation light produced by argon (128 nm) and xenon (173 nm). We observed greater non-linearities in the avalanche photodiodes for the VUV scintillation light than reported previously for visible light, but considerably less than the non-linearities observed in other commercially available avalanche photodiodes.

  11. Dynamic intermittency in discrete erodible-bed avalanches

    Science.gov (United States)

    Arran, Matthew; Vriend, Nathalie

    2016-11-01

    The coexistence of fluid-like and solid-like behaviour in granular matter allows avalanches of grains to flow on the surface of a static but erodible bed. For sufficiently slow inflow, these avalanches are discrete, with previous experimentalists reporting that avalanche fronts pass a given point quasi-periodically. We report instead observations of dynamic intermittency between two regimes, one in which avalanches occur quasi-periodically and another in which the intervals between them are irregular. Finding the first regime consistent with existing models, we introduce a model for the second regime within the framework of Self-Organised Criticality, and describe the transition between the regimes with reference to the state of the erodible bed.

  12. Avalanche statistics from data with low time resolution.

    Science.gov (United States)

    LeBlanc, Michael; Nawano, Aya; Wright, Wendelin J; Gu, Xiaojun; Uhl, J T; Dahmen, Karin A

    2016-11-01

    Extracting avalanche distributions from experimental microplasticity data can be hampered by limited time resolution. We compute the effects of low time resolution on avalanche size distributions and give quantitative criteria for diagnosing and circumventing problems associated with low time resolution. We show that traditional analysis of data obtained at low acquisition rates can lead to avalanche size distributions with incorrect power-law exponents or no power-law scaling at all. Furthermore, we demonstrate that it can lead to apparent data collapses with incorrect power-law and cutoff exponents. We propose new methods to analyze low-resolution stress-time series that can recover the size distribution of the underlying avalanches even when the resolution is so low that naive analysis methods give incorrect results. We test these methods on both downsampled simulation data from a simple model and downsampled bulk metallic glass compression data and find that the methods recover the correct critical exponents.

  13. UNIQUENESS OF SOLUTIONS FOR SEMICONDUCTOR EQUATIONS WITH AVALANCHE TERM

    Institute of Scientific and Technical Information of China (English)

    Xing Jiasheng; Wang Yuanming

    2000-01-01

    In this paper, we consider the initial and mixed boundary value problems for the semiconductor equations with avalanche term, the uniqueness of the weak solution for the semiconductor equation has been proved.

  14. Geiger-Mode Avalanche Photodiodes in Particle Detection

    OpenAIRE

    Vilella, E.; Alonso, O.; Trenado, J.; Vilà, A.; De Vos, M.; Garrido, L.; Diéguez, A.

    2012-01-01

    It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite sensitivity and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection remains still unexplored. In this contribution, we are going to expose the different steps that we have taken in order to prove the efficiency of Geiger mode avalanche photodiodes in the aforementioned field. In particula...

  15. Influence of snow-cover properties on avalanche dynamics

    Science.gov (United States)

    Steinkogler, W.; Sovilla, B.; Lehning, M.

    2012-04-01

    Snow avalanches with the potential of reaching traffic routes and settlements are a permanent winter threat for many mountain communities. Snow safety officers have to take the decision whether to close a road, a railway line or a ski slope. Those decisions are often very difficult as they demand the ability to interpret weather forecasts, to establish their implication for the stability and the structure of the snow cover and to evaluate the influence of the snow cover on avalanche run-out distances. In the operational programme 'Italy-Switzerland, project STRADA' we focus on the effects of snow cover on avalanche dynamics, and thus run-out distance, with the aim to provide a better understanding of this influence and to ultimately develop tools to support snow safety officers in their decision process. We selected five avalanches, measured at the Vallée de la Sionne field site, with similar initial mass and topography but different flow dynamics and run-out distances. Significant differences amongst the individual avalanches could be observed for front and internal velocities, impact pressures, flow regimes, deposition volumes and run-out distances. For each of these avalanches, the prevailing snow conditions at release were reconstructed using field data from local snowpits or were modeled with SNOWPACK. Combining flow dynamical data with snow cover properties shows that erodible snow depth, snow density and snow temperature in the snow pack along the avalanche track are among the decisive variables that appear to explain the observed differences. It is further discussed, how these influencing factors can be quantified and used for improved predictions of site and time specific avalanche hazard.

  16. Effect of volume fraction on granular avalanche dynamics.

    Science.gov (United States)

    Gravish, Nick; Goldman, Daniel I

    2014-09-01

    We study the evolution and failure of a granular slope as a function of prepared volume fraction, ϕ(0). We rotated an initially horizontal layer of granular material (0.3-mm-diam glass spheres) to a 45° angle while we monitor the motion of grains from the side and top with high-speed video cameras. The dynamics of grain motion during the tilt process depended sensitively on ϕ(0)∈[0.58-0.63] and differed above or below the granular critical state, ϕ(c), defined as the onset of dilation as a function of increasing volume fraction. For ϕ(0)-ϕ(c)avalanche. Precursor compaction events began at an initial angle θ(0)=7.7±1.4° and occurred intermittently prior to the onset of an avalanche. Avalanches occurred at the maximal slope angle θ(m)=28.5±1.0°. Granular material at ϕ(0)-ϕ(c)>0 did not experience precursor compaction prior to avalanche flow, and instead experienced a single dilational motion at θ(0)=32.1±1.5° prior to the onset of an avalanche at θ(m)=35.9±0.7°. Both θ(0) and θ(m) increased with ϕ(0) and approached the same value in the limit of random close packing. The angle at which avalanching grains came to rest, θ(R)=22±2°, was independent of ϕ(0). From side-view high-speed video, we measured the velocity field of intermittent and avalanching flow. We found that flow direction, depth, and duration were affected by ϕ(0), with ϕ(0)-ϕ(c)0. Our study elucidates how initial conditions-including volume fraction-are important determinants of granular slope stability and the onset of avalanches.

  17. Avalanche Phenomenon of Runaway Electrons During Additional Fuelling

    Institute of Scientific and Technical Information of China (English)

    杨进蔚; 曹建勇; 曾庆希; 张炜; 唐年益; 董贾福; 邓中朝; 肖正贵; 姚良骅

    2002-01-01

    During pellet injection and supersonic molecular beam injection, we have observed the increase of electron density and the enhancement of hard x-ray radiation, but the runaway electrons normally decrease without additional fuelling when the density of plasma increases. This phenomenon may come from the synergetic effects of Dreicer and avalanche runaway electrons. The experimental results are consistent with the calculation based on the theory of avalanche runaway in the HL-1M tokamak.

  18. 含磷有机硅杂化环氧树脂固化体系性能研究%PROPERTIES OF PHOSPHORUS-CONTAINING ORGANIC SILICON/EPOXY HYBRID RESIN

    Institute of Scientific and Technical Information of China (English)

    魏振杰; 刘伟区; 李宏静; 马松琪; 闫振龙

    2012-01-01

    A phosphorus-containing organic silicone was synthesized from γ-glycidoxypropyltrimethoxysilane and phosphoric acid reacting. Phosphorus-containing organic silicone/epoxy hybrid resins were prepared by sol-gel method, and the cured resins were prepared from the in situ curing of the bisphenol-A type epoxy resin/4, 4'-diaminodiphenylmethane,and phosphorus-containing organic silicone. The properties of the hybrid resin and neat epoxy resin were studied by using thermogravimetric analysis, differential scanning calorimetry, limited oxygen index, tensile strength and impact strength measurements. The flame retardancy was indicated by the limited oxygen index in the range of 25. 8 ~ 29. 3, higher than that of the neat epoxy resin. The glass transition temperature is in the range of 161 - 179℃, higher than that of the neat epoxy by resin. The thermal stability of the hybrid resin is not superior to that of the neat epoxy resin at low temperature, however, the char yield of it can reach 26. 5% , higher than that of the neat epoxy by 36% at 800℃. The tensile strengths of the hybrid resin are 60 ~ 80 Mpa, higher than that of the neat epoxy resin and the impact strengths can reach 14. 36 kJ/ m2,higher than that of the neat epoxy resin by 14%. Compared to the neat epoxy resin, the hybrid resin possesses better flame retardancy and thermal stability, and the tensile strength and impact strength are improved.%通过磷酸与γ-环氧丙氧基三甲氧基硅烷反应得到含磷有机硅氧烷,并加入到环氧树脂/4,4’-二氨基二苯基甲烷体系中混合,通过溶胶-凝胶的方法制备了含磷有机硅杂化环氧树脂固化物.对固化体系进行了玻璃化转变温度、热失重、阻燃、拉伸强度、冲击强度测试分析.结果表明,该固化体系的阻燃性得到提高,极限氧指数在25.8~29.3,玻璃化转变温度得到提高,在161~179℃;虽然初始分解温度比纯环氧树脂固化物低,但800℃残炭率可以达到26.5

  19. Ultra-Fast Silicon Detectors for 4D tracking

    Science.gov (United States)

    Sola, V.; Arcidiacono, R.; Bellora, A.; Cartiglia, N.; Cenna, F.; Cirio, R.; Durando, S.; Ferrero, M.; Galloway, Z.; Gruey, B.; Freeman, P.; Mashayekhi, M.; Mandurrino, M.; Monaco, V.; Mulargia, R.; Obertino, M. M.; Ravera, F.; Sacchi, R.; Sadrozinski, H. F.-W.; Seiden, A.; Spencer, N.; Staiano, A.; Wilder, M.; Woods, N.; Zatserklyaniy, A.

    2017-02-01

    We review the progress toward the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~ 10 larger than standard silicon detectors.

  20. Spatio-temporal avalanche forecasting with Support Vector Machines

    Directory of Open Access Journals (Sweden)

    A. Pozdnoukhov

    2011-02-01

    Full Text Available This paper explores the use of the Support Vector Machine (SVM as a data exploration tool and a predictive engine for spatio-temporal forecasting of snow avalanches. Based on the historical observations of avalanche activity, meteorological conditions and snowpack observations in the field, an SVM is used to build a data-driven spatio-temporal forecast for the local mountain region. It incorporates the outputs of simple physics-based and statistical approaches used to interpolate meteorological and snowpack-related data over a digital elevation model of the region. The interpretation of the produced forecast is discussed, and the quality of the model is validated using observations and avalanche bulletins of the recent years. The insight into the model behaviour is presented to highlight the interpretability of the model, its abilities to produce reliable forecasts for individual avalanche paths and sensitivity to input data. Estimates of prediction uncertainty are obtained with ensemble forecasting. The case study was carried out using data from the avalanche forecasting service in the Locaber region of Scotland, where avalanches are forecast on a daily basis during the winter months.

  1. Repertoires of spike avalanches are modulated by behavior and novelty

    Directory of Open Access Journals (Sweden)

    Tiago Lins Ribeiro

    2016-03-01

    Full Text Available Neuronal avalanches measured as consecutive bouts of thresholded field potentials represent a statistical signature that the brain operates near a critical point. In theory, criticality optimizes stimulus sensitivity, information transmission, computational capability and mnemonic repertoires size. Field potential avalanches recorded via multielectrode arrays from cortical slice cultures are repeatable spatiotemporal activity patterns. It remains unclear whether avalanches of action potentials observed in forebrain regions of freely-behaving rats also form recursive repertoires, and whether these have any behavioral relevance. Here we show that spike avalanches, recorded from hippocampus and sensory neocortex of freely-behaving rats, constitute distinct families of recursive spatiotemporal patterns. A significant number of those patterns were specific to a behavioral state. Although avalanches produced during sleep were mostly similar to others that occurred during waking, the repertoire of patterns recruited during sleep differed significantly from that of waking. More importantly, exposure to novel objects increased the rate at which new patterns arose, also leading to changes in post-exposure repertoires, which were significantly different from those before the exposure. A significant number of families occurred exclusively during periods of whisker contact with objects, but few were associated with specific objects. Altogether, the results provide original evidence linking behavior and criticality at the spike level: spike avalanches form repertoires that emerge in waking, recur during sleep, are diversified by novelty and contribute to object representation.

  2. Repertoires of Spike Avalanches Are Modulated by Behavior and Novelty.

    Science.gov (United States)

    Ribeiro, Tiago L; Ribeiro, Sidarta; Copelli, Mauro

    2016-01-01

    Neuronal avalanches measured as consecutive bouts of thresholded field potentials represent a statistical signature that the brain operates near a critical point. In theory, criticality optimizes stimulus sensitivity, information transmission, computational capability and mnemonic repertoires size. Field potential avalanches recorded via multielectrode arrays from cortical slice cultures are repeatable spatiotemporal activity patterns. It remains unclear whether avalanches of action potentials observed in forebrain regions of freely-behaving rats also form recursive repertoires, and whether these have any behavioral relevance. Here, we show that spike avalanches, recorded from hippocampus (HP) and sensory neocortex of freely-behaving rats, constitute distinct families of recursive spatiotemporal patterns. A significant number of those patterns were specific to a behavioral state. Although avalanches produced during sleep were mostly similar to others that occurred during waking, the repertoire of patterns recruited during sleep differed significantly from that of waking. More importantly, exposure to novel objects increased the rate at which new patterns arose, also leading to changes in post-exposure repertoires, which were significantly different from those before the exposure. A significant number of families occurred exclusively during periods of whisker contact with objects, but few were associated with specific objects. Altogether, the results provide original evidence linking behavior and criticality at the spike level: spike avalanches form repertoires that emerge in waking, recur during sleep, are diversified by novelty and contribute to object representation.

  3. A revision of the Haiming rock avalanche (Eastern Alps)

    Science.gov (United States)

    Dufresne, Anja; Ostermann, Marc; Kelfoun, Karim; Ring, Max; Asam, Dario; Prager, Christoph

    2016-04-01

    The carbonate Haiming rock avalanche is directly neighbouring the larger Tschirgant rock avalanche deposit, both located in the upper Inn valley (Tyrol, Austria). Based on detailed morpho-lithologic mapping of the deposit, which has not been done at Haiming before, the sedimentology of the Holocene landslide debris is characterised. Structural-tectonic elements of the bedrock units at the scarp area are supplemented with borehole data from drillings at the source area giving valuable insights into the complex geological bedrock composition and structure. New source and runout reconstructions allow updated volumetric calculations, which are subsequently integrated into numerical runout modelling. Haiming is one of few topographically unobstructed rock avalanches, yet its morphology was greatly influenced by fluvial terraces, which are still discernible through the deposit on LiDAR hillshade images. We also address the influence of the rock avalanche on the valley floor and local river system as a short-lived dam and its interaction with fluvial incision. Finally, we discuss the Haiming rock avalanche in view of the other massive rock slope failures in the area ("Fernpass cluster"), their spatio-temporal distribution, and point out further highlights of this simple(?) rock avalanche deposit.

  4. Avalanches, plasticity, and ordering in colloidal crystals under compression.

    Science.gov (United States)

    McDermott, D; Reichhardt, C J Olson; Reichhardt, C

    2016-06-01

    Using numerical simulations we examine colloids with a long-range Coulomb interaction confined in a two-dimensional trough potential undergoing dynamical compression. As the depth of the confining well is increased, the colloids move via elastic distortions interspersed with intermittent bursts or avalanches of plastic motion. In these avalanches, the colloids rearrange to minimize their colloid-colloid repulsive interaction energy by adopting an average lattice constant that is isotropic despite the anisotropic nature of the compression. The avalanches take the form of shear banding events that decrease or increase the structural order of the system. At larger compression, the avalanches are associated with a reduction of the number of rows of colloids that fit within the confining potential, and between avalanches the colloids can exhibit partially crystalline or anisotropic ordering. The colloid velocity distributions during the avalanches have a non-Gaussian form with power-law tails and exponents that are consistent with those found for the velocity distributions of gliding dislocations. We observe similar behavior when we subsequently decompress the system, and find a partially hysteretic response reflecting the irreversibility of the plastic events.

  5. Avalanches and hysteresis in frustrated superconductors and XY spin glasses.

    Science.gov (United States)

    Sharma, Auditya; Andreanov, Alexei; Müller, Markus

    2014-10-01

    We study avalanches along the hysteresis loop of long-range interacting spin glasses with continuous XY symmetry, which serves as a toy model of granular superconductors with long-range and frustrated Josephson couplings. We identify sudden jumps in the T=0 configurations of the XY phases as an external field is increased. They are initiated by the softest mode of the inverse susceptibility matrix becoming unstable, which induces an avalanche of phase updates (or spin alignments). We analyze the statistics of these events and study the correlation between the nonlinear avalanches and the soft mode that initiates them. We find that the avalanches follow the directions of a small fraction of the softest modes of the inverse susceptibility matrix, similarly as was found in avalanches in jammed systems. In contrast to the similar Ising spin glass (Sherrington-Kirkpatrick) studied previously, we find that avalanches are not distributed with a scale-free power law but rather have a typical size which scales with the system size. We also observe that the Hessians of the spin-glass minima are not part of standard random matrix ensembles as the lowest eigenvector has a fractal support.

  6. Modeling of snow avalanches for protection measures designing

    Science.gov (United States)

    Turchaninova, Alla; Lazarev, Anton; Loginova, Ekaterina; Seliverstov, Yuri; Glazovskaya, Tatiana; Komarov, Anton

    2017-04-01

    Avalanche protection structures such as dams have to be designed using well known standard engineering procedures that differ in different countries. Our intent is to conduct a research on structural avalanche protection measures designing and their reliability assessment during the operation using numerical modeling. In the Khibini Mountains, Russia, several avalanche dams have been constructed at different times to protect settlements and mining. Compared with other mitigation structures dams are often less expensive to construct in mining regions. The main goal of our investigation was to test the capabilities of Swiss avalanche dynamics model RAMMS and Russian methods to simulate the interaction of avalanches with mitigation structures such as catching and reflecting dams as well as to reach the observed runout distances after the transition through a dam. We present the RAMMS back-calculation results of an artificially triggered and well-documented catastrophic avalanche occurred in the town of Kirovsk, Khibini Mountains in February 2016 that has unexpectedly passed through a system of two catching dams and took the lives of 3 victims. The estimated volume of an avalanche was approximately 120,000 m3. For the calculation we used a 5 m DEM including catching dams generated from field measurements in summer 2015. We simulated this avalanche (occurred below 1000 m.a.s.l.) in RAMMS having taken the friction parameters (µ and ζ) from the upper altitude limit (above 1500 m.a.s.l.) from the table recommended for Switzerland (implemented into RAMMS) according to the results of our previous research. RAMMS reproduced the observed avalanche behavior and runout distance. No information is available concerning the flow velocity; however, calculated values correspond in general to the values measured in this avalanche track before. We applied RAMMS using an option of adding structures to DEM (including a dam in GIS) in other to test other operating catching dams in

  7. Highly Conductive PEDOT:PSS Transparent Hole Transporting Layer with Solvent Treatment for High Performance Silicon/Organic Hybrid Solar Cells

    Science.gov (United States)

    Li, Qingduan; Yang, Jianwei; Chen, Shuangshuang; Zou, Jizhao; Xie, Weiguang; Zeng, Xierong

    2017-08-01

    Efficient Si/organic hybrid solar cells were fabricated with dimethyl sulfoxide (DMSO) and surfactant-doped poly(3,4-ethylenedioxythiophene): polystyrene (PEDOT:PSS). A post-treatment on PEDOT:PSS films with polar solvent was performed to increase the device performance. We found that the performance of hybrid solar cells increase with the polarity of solvent. A high conductivity of 1105 S cm- 1 of PEDOT:PSS was achieved by adopting methanol treatment, and the best efficiency of corresponding hybrid solar cells reaches 12.22%. X-ray photoelectron spectroscopy (XPS) and RAMAN spectroscopy were utilized to conform to component changes of PEDOT:PSS films after solvent treatment. It was found that the removal of the insulator PSS from the film and the conformational changes are the determinants for the device performance enhancement. Electrochemical impedance spectroscopy (EIS) was used to investigate the recombination resistance and capacitance of methanol-treated and untreated hybrid solar cells, indicating that methanol-treated devices had a larger recombination resistance and capacitance. Our findings bring a simple and efficient way for improving the performance of hybrid solar cell.

  8. Highly Conductive PEDOT:PSS Transparent Hole Transporting Layer with Solvent Treatment for High Performance Silicon/Organic Hybrid Solar Cells.

    Science.gov (United States)

    Li, Qingduan; Yang, Jianwei; Chen, Shuangshuang; Zou, Jizhao; Xie, Weiguang; Zeng, Xierong

    2017-08-23

    Efficient Si/organic hybrid solar cells were fabricated with dimethyl sulfoxide (DMSO) and surfactant-doped poly(3,4-ethylenedioxythiophene): polystyrene (PEDOT:PSS). A post-treatment on PEDOT:PSS films with polar solvent was performed to increase the device performance. We found that the performance of hybrid solar cells increase with the polarity of solvent. A high conductivity of 1105 S cm(- 1) of PEDOT:PSS was achieved by adopting methanol treatment, and the best efficiency of corresponding hybrid solar cells reaches 12.22%. X-ray photoelectron spectroscopy (XPS) and RAMAN spectroscopy were utilized to conform to component changes of PEDOT:PSS films after solvent treatment. It was found that the removal of the insulator PSS from the film and the conformational changes are the determinants for the device performance enhancement. Electrochemical impedance spectroscopy (EIS) was used to investigate the recombination resistance and capacitance of methanol-treated and untreated hybrid solar cells, indicating that methanol-treated devices had a larger recombination resistance and capacitance. Our findings bring a simple and efficient way for improving the performance of hybrid solar cell.

  9. Powerful, Efficient Electric Vehicle Chargers: Low-Cost, Highly-Integrated Silicon Carbide (SiC) Multichip Power Modules (MCPMs) for Plug-In Hybrid Electric

    Energy Technology Data Exchange (ETDEWEB)

    None

    2010-09-14

    ADEPT Project: Currently, charging the battery of an electric vehicle (EV) is a time-consuming process because chargers can only draw about as much power from the grid as a hair dryer. APEI is developing an EV charger that can draw as much power as a clothes dryer, which would drastically speed up charging time. APEI's charger uses silicon carbide (SiC)-based power transistors. These transistors control the electrical energy flowing through the charger's circuits more effectively and efficiently than traditional transistors made of straight silicon. The SiC-based transistors also require less cooling, enabling APEI to create EV chargers that are 10 times smaller than existing chargers.

  10. Skier triggering of backcountry avalanches with skilled route selection

    Science.gov (United States)

    Sinickas, Alexandra; Haegeli, Pascal; Jamieson, Bruce

    2015-04-01

    Jamieson (2009) provided numerical estimates for the baseline probabilities of triggering an avalanche by a backcountry skier making fresh tracks without skilled route selection as a function of the North American avalanche danger scale (i.e., hazard levels Low, Moderate, Considerable, High and Extreme). Using the results of an expert survey, he showed that triggering probabilities while skiing directly up, down or across a trigger zone without skilled route selection increase roughly by a factor of 10 with each step of the North American avalanche danger scale (i.e. hazard level). The objective of the present study is to examine the effect of skilled route selection on the relationship between triggering probability and hazard level. To assess the effect of skilled route selection on triggering probability by hazard level, we analysed avalanche hazard assessments as well as reports of skiing activity and triggering of avalanches from 11 Canadian helicopter and snowcat operations during two winters (2012-13 and 2013-14). These reports were submitted to the daily information exchange among Canadian avalanche safety operations, and reflect professional decision-making and route selection practices of guides leading groups of skiers. We selected all skier-controlled or accidentally triggered avalanches with a destructive size greater than size 1 according to the Canadian avalanche size classification, triggered by any member of a guided group (guide or guest). These operations forecast the avalanche hazard daily for each of three elevation bands: alpine, treeline and below treeline. In contrast to the 2009 study, an exposure was defined as a group skiing within any one of the three elevation bands, and consequently within a hazard rating, for the day (~4,300 ratings over two winters). For example, a group that skied below treeline (rated Moderate) and treeline (rated Considerable) in one day, would receive one count for exposure to Moderate hazard, and one count for

  11. Synthesis and characterization of hybrid silicon based complexing materials: extraction of transuranic elements from high level liquid waste; Synthese et caracterisation de gels hybrides de silice a proprietes complexantes: applications a l'extraction des transuraniens des effluents aqueux

    Energy Technology Data Exchange (ETDEWEB)

    Conocar, O

    1999-07-01

    Hybrid organic/inorganic silica compounds with extractive properties have been developed under an enhanced decontamination program for radioactive aqueous nitric acid waste in nuclear facilities. The materials were obtained by the sol-gel process through hydrolysis and poly-condensation of complexing organo-tri-alkoxy-silanes with the corresponding tetra-alkoxy-silane. Hybrid silica compounds were initially synthesized and characterized from mono- and bis-silyl precursors with malonamide or ethylenediamine patterns. Solids with different specific areas and pore diameters were obtained depending on the nature of the precursor, its functionality and its concentration in the tetra-alkoxy-silane. These compounds were then considered and assessed for use in plutonium and americium extraction. Excellent results-partitioning coefficients and capacities have been obtained with malonamide hybrid silica. The comparison with silica compounds impregnated or grafted with the same type of organic group is significant in this respect. Much of the improved performance obtained with hybrid silica may be attributed to the large quantity of complexing groups that can be incorporated in these materials. The effect of the solid texture on the extraction performance was also studied. Although the capacity increased with the specific area, little effect was observed on the distribution coefficients -notably for americium- indicating that the most favorable complexation sites are found on the outer surface. Macroporous malonamide hybrid silica compounds were synthesized to study the effects of the pore diameter, but the results have been inconclusive to date because of the unexpected molecular composition of the materials. (author)

  12. Corrosion behaviour of groundnut shell ash and silicon carbide hybrid reinforced Al-Mg-Si alloy matrix composites in 3.5% NaCl and 0.3M H2SO4 solutions

    Directory of Open Access Journals (Sweden)

    Kenneth Kanayo ALANEME

    2015-05-01

    Full Text Available The corrosion behaviour of Al-Mg-Si alloy based composites reinforced with groundnut shell ash (GSA and silicon carbide (SiC was investigated. The aim is to assess the corrosion properties of Al-Mg-Si alloy based hybrid reinforced composites developed using different mix ratios of GSA (a cheaply processed agro waste derivative which served as partial replacement for SiC and SiC as reinforcing materials. GSA and SiC mixed in weight ratios 0:1, 1:3, 1:1, 3:1, and 1:0 were utilized to prepare 6 and 10 wt% of the reinforcing phase with Al‐Mg‐Si alloy as matrix using two‐step stir casting method. Mass loss and corrosion rate measurement was used to study the corrosion behaviour of the produced composites in 3.5% NaCl and 0.3M H2SO4 solutions. The results show that the Al-Mg-Si alloy based composites containing 6 and 10 wt% GSA and SiC in varied weight ratios were resistant to corrosion in 3.5% NaCl solution. The composites were however more susceptible to corrosion in 0.3M H2SO4 solution (in comparison with the 3.5% NaCl solution. It was noted that the Al-Mg-Si/6 wt% GSA-SiC hybrid composite grades containing GSA and SiC in weight ratio 1:3 and 3:1 respectively exhibited superior corrosion resistance in the 0.3M H2SO4 solution compared to other composites produced for this series. In the case of the Al-Mg-Si/10 wt% GSA-SiC hybrid composite grades, the corrosion resistance was relatively superior for the composites containing a greater weight ratio of GSA (75% and 100% in 0.3M H2SO4 solution.

  13. Avalanches in a granular stick-slip experiment: detection using wavelets

    Science.gov (United States)

    Abed Zadeh, Aghil; Barés, Jonathan; Behringer, Robert P.

    2017-06-01

    Avalanches have been experimentally investigated in a wide range of physical systems from granular physics to friction. Here, we measure and detect avalanches in a 2D granular stick-slip experiment. We discuss the conventional way of signal processing for avalanche extraction and how statistics depend on several parameters that are chosen in the analysis process. Then, we introduce another way of detecting avalanches using wavelet transformations that can be applied in many other systems. We show that by using this method and measuring Lipschitz exponents, we can intelligently detect noise in a signal, which leads to a better avalanche extraction and more reliable avalanche statistics.

  14. First approximations in avalanche model validations using seismic information

    Science.gov (United States)

    Roig Lafon, Pere; Suriñach, Emma; Bartelt, Perry; Pérez-Guillén, Cristina; Tapia, Mar; Sovilla, Betty

    2017-04-01

    Avalanche dynamics modelling is an essential tool for snow hazard management. Scenario based numerical modelling provides quantitative arguments for decision-making. The software tool RAMMS (WSL Institute for Snow and Avalanche Research SLF) is one such tool, often used by government authorities and geotechnical offices. As avalanche models improve, the quality of the numerical results will depend increasingly on user experience on the specification of input (e.g. release and entrainment volumes, secondary releases, snow temperature and quality). New model developments must continue to be validated using real phenomena data, for improving performance and reliability. The avalanches group form University of Barcelona (RISKNAT - UB), has studied the seismic signals generated from avalanches since 1994. Presently, the group manages the seismic installation at SLF's Vallée de la Sionne experimental site (VDLS). At VDLS the recorded seismic signals can be correlated to other avalanche measurement techniques, including both advanced remote sensing methods (radars, videogrammetry) and obstacle based sensors (pressure, capacitance, optical sender-reflector barriers). This comparison between different measurement techniques allows the group to address the question if seismic analysis can be used alone, on more additional avalanche tracks, to gain insight and validate numerical avalanche dynamics models in different terrain conditions. In this study, we aim to add the seismic data as an external record of the phenomena, able to validate RAMMS models. The seismic sensors are considerable easy and cheaper to install than other physical measuring tools, and are able to record data from the phenomena in every atmospheric conditions (e.g. bad weather, low light, freezing make photography, and other kind of sensors not usable). With seismic signals, we record the temporal evolution of the inner and denser parts of the avalanche. We are able to recognize the approximate position

  15. The structure of powder snow avalanches

    Science.gov (United States)

    Sovilla, Betty; McElwaine, Jim N.; Louge, Michel Y.

    2015-01-01

    Powder snow avalanches (PSAs) can be hundreds of metres high and descend at astonishing speeds. This review paints a composite picture of PSAs from data acquired at the Vallée de la Sionne test site in Switzerland, including time-histories of snow cover thickness from buried RADAR and, at several elevations on a pylon, impact pressures from load cells, air pressure, particle velocity from optical sensors, and cloud density and particle cluster size from capacitance probes. PSAs feature distinct flow regions with stratification in mean density. At the head, highly fluctuating impact pressures weaken with elevation, while vertical velocity profiles evolve rapidly along the flow, suggesting that surface snow layers of light, cold, cohesionless snow erupt into a turbulent, inhomogeneous, recirculating frontal cloud region. For hundreds of metres behind the head, cloud stratification sharpens with the deposition of suspended cloud particles, while a denser basal flow of increasing thickness forms as deeper, warmer and heavier parts of the weakened snow cover are entrained. Toward the tail, vertical velocity profiles are more uniform, impact pressures become lower and steadier as the flow becomes thinner, and snow pack entrainment is negligible.

  16. Granular avalanches down inclined and vibrated planes

    Science.gov (United States)

    Gaudel, Naïma; Kiesgen de Richter, Sébastien; Louvet, Nicolas; Jenny, Mathieu; Skali-Lami, Salaheddine

    2016-09-01

    In this article, we study granular avalanches when external mechanical vibrations are applied. We identify conditions of flow arrest and compare with the ones classically observed for nonvibrating granular flows down inclines [Phys. Fluids 11, 542 (1999), 10.1063/1.869928]. We propose an empirical law to describe the thickness of the deposits with the inclination angle and the vibration intensity. The link between the surface velocity and the depth of the flow highlights a competition between gravity and vibrations induced flows. We identify two distinct regimes: (a) gravity-driven flows at large angles where vibrations do not modify dynamical properties but the deposits (scaling laws in this regime are in agreement with the literature for nonvibrating granular flows) and (b) vibrations-driven flows at small angles where no flow is possible without applied vibrations (in this last regime, the flow behavior can be properly described by a vibration induced activated process). We show, in this study, that granular flows down inclined planes can be finely tuned by external mechanical vibrations.

  17. Infrasonic monitoring of snow avalanches in the Alps

    Science.gov (United States)

    Marchetti, E.; Ulivieri, G.; Ripepe, M.; Chiambretti, I.; Segor, V.

    2012-04-01

    Risk assessment of snow avalanches is mostly related to weather conditions and snow cover. However a robust risk validation requires to identify all avalanches occurring, in order to compare predictions to real effects. For this purpose on December 2010 we installed a permanent 4-element, small aperture (100 m), infrasound array in the Alps, after a pilot experiment carried out in Gressonay during the 2009-2010 winter season. The array has been deployed in the Ayas Valley, at an elevation of 2000 m a.s.l., where natural avalanches are expected and controlled events are regularly performed. The array consists into 4 Optimic 2180 infrasonic microphones, with a sensitivity of 10-3 Pa in the 0.5-50 Hz frequency band and a 4 channel Guralp CMG-DM24 A/D converter, sampling at 100 Hz. Timing is achieved with a GPS receiver. Data are transmitted to the Department of Earth Sciences of the University of Firenze, where data is recorded and processed in real-time. A multi-channel semblance is carried out on the continuous data set as a function of slowness, back-azimuth and frequency of recorded infrasound in order to detect all avalanches occurring from the back-ground signal, strongly affected by microbarom and mountain induced gravity waves. This permanent installation in Italy will allow to verify the efficiency of the system in short-to-medium range (2-8 km) avalanche detection, and might represent an important validation to model avalanches activity during this winter season. Moreover, the real-time processing of infrasonic array data, might strongly contribute to avalanche risk assessments providing an up-to-description of ongoing events.

  18. Avalanches in a stochastic model of spiking neurons.

    Directory of Open Access Journals (Sweden)

    Marc Benayoun

    Full Text Available Neuronal avalanches are a form of spontaneous activity widely observed in cortical slices and other types of nervous tissue, both in vivo and in vitro. They are characterized by irregular, isolated population bursts when many neurons fire together, where the number of spikes per burst obeys a power law distribution. We simulate, using the Gillespie algorithm, a model of neuronal avalanches based on stochastic single neurons. The network consists of excitatory and inhibitory neurons, first with all-to-all connectivity and later with random sparse connectivity. Analyzing our model using the system size expansion, we show that the model obeys the standard Wilson-Cowan equations for large network sizes ( neurons. When excitation and inhibition are closely balanced, networks of thousands of neurons exhibit irregular synchronous activity, including the characteristic power law distribution of avalanche size. We show that these avalanches are due to the balanced network having weakly stable functionally feedforward dynamics, which amplifies some small fluctuations into the large population bursts. Balanced networks are thought to underlie a variety of observed network behaviours and have useful computational properties, such as responding quickly to changes in input. Thus, the appearance of avalanches in such functionally feedforward networks indicates that avalanches may be a simple consequence of a widely present network structure, when neuron dynamics are noisy. An important implication is that a network need not be "critical" for the production of avalanches, so experimentally observed power laws in burst size may be a signature of noisy functionally feedforward structure rather than of, for example, self-organized criticality.

  19. Avalanches in a stochastic model of spiking neurons.

    Science.gov (United States)

    Benayoun, Marc; Cowan, Jack D; van Drongelen, Wim; Wallace, Edward

    2010-07-08

    Neuronal avalanches are a form of spontaneous activity widely observed in cortical slices and other types of nervous tissue, both in vivo and in vitro. They are characterized by irregular, isolated population bursts when many neurons fire together, where the number of spikes per burst obeys a power law distribution. We simulate, using the Gillespie algorithm, a model of neuronal avalanches based on stochastic single neurons. The network consists of excitatory and inhibitory neurons, first with all-to-all connectivity and later with random sparse connectivity. Analyzing our model using the system size expansion, we show that the model obeys the standard Wilson-Cowan equations for large network sizes ( neurons). When excitation and inhibition are closely balanced, networks of thousands of neurons exhibit irregular synchronous activity, including the characteristic power law distribution of avalanche size. We show that these avalanches are due to the balanced network having weakly stable functionally feedforward dynamics, which amplifies some small fluctuations into the large population bursts. Balanced networks are thought to underlie a variety of observed network behaviours and have useful computational properties, such as responding quickly to changes in input. Thus, the appearance of avalanches in such functionally feedforward networks indicates that avalanches may be a simple consequence of a widely present network structure, when neuron dynamics are noisy. An important implication is that a network need not be "critical" for the production of avalanches, so experimentally observed power laws in burst size may be a signature of noisy functionally feedforward structure rather than of, for example, self-organized criticality.

  20. Advantages of gated silicon single photon detectors

    CERN Document Server

    Lunghi, T; Barreiro, C; Stucki, D; Sanguinetti, B; Zbinden, H

    2012-01-01

    We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45\\pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and -30{\\deg}C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the "charge persistence" effect, whereby a detector clicks some time after having been illuminated.

  1. Sediment Transport by Spring Avalanches in the Southern Swiss Alps

    Science.gov (United States)

    Egloff, J. M.; Hunziker, M.; Moore, J. R.; Christen, M.

    2010-12-01

    Dense wet-snow avalanches breaking through to the base of the snow pack or overriding snow-free surfaces can entrain basal material and act as important agents of sediment transport in steep Alpine catchments. As part of an ongoing study, we investigated two debris fans in the Matter Valley of southern Switzerland during spring 2009 and 2010, with emphasis on quantifying avalanche sediment transport. Deposited debris ranged from soil parcels and plant material to cobbles and boulders greater than 1 m3. Large boulders were generally angular and fresh with clear signs of recent impacts. The seasonal sediment load transported by avalanches was estimated at one fan by sampling the debris content within a number of representative areas, and then extrapolating the cumulative volume. Results reveal a total transported sediment volume of ~150 m3 in 2009 and ~15 m3 in 2010, which likely reflects varying snowfall and avalanche frequency between years. When distributed over the deposition area on the fan, these results imply an average accumulated sediment thickness of 12 mm in 2009 and 3 mm in 2010. Calculated catchment-wide erosion rates are ~0.1 mm/yr for 2009 and ~0.01 mm/yr for 2010. Cross-sections through avalanche debris revealed that transported sediment generally resides on top of the snow surface. As the avalanches melt, entrained sediment is set down gently, often resulting in precariously balanced boulders and rows of blocks perched on the walls of the fan’s channels. In flat lying areas, snowmelt resulted in sparse sediment deposits with no clear structure or sorting. Observations show that the fan surface is usually protected from erosion by snow and older avalanche deposits, which provide a smooth gliding plane for new events. Within the bedrock gulley adjacent to the fan, and in the avalanche source region above, signs of abrasive wear were evident on exposed bedrock surfaces. These include rounded and scoured bedrock, fresh signs of boulder impacts, and

  2. Implications of Grainfall for Avalanches and Barchan Dune Morphodynamics

    Science.gov (United States)

    Nield, J. M.; Wiggs, G.; Baddock, M. C.; Hipondoka, M.

    2016-12-01

    Sediment accumulation on aeolian dunes is predominately though avalanching (or grainflow). This grainflow is initiated by the accumulation of grainfall deposits, close to the dune brink. When the accumulation, or `bulge', exceeds an angle of repose, avalanches are initiated and sediment is transported down the lee of the dune. The location of sediment accumulation, or avalanche initiation point, is determined by the distance that grainfall can travel from the dune brink. While previous studies have focused on determining angles at which avalanches occur, along with depositional flux rates, technical constraints have limited the testing of models to predict grainfall zone dynamics under varying wind conditions. Here we use terrestrial laser scanning (TLS) to measure both grainfall distance and associated lee slope surface change of a 5 m high barchan dune under variable wind speeds, on the Skeleton Coast, Namibia. We find that under stronger winds, the distance that grainfall can travel from the brink expands (by up to 0.45 m for a 3 m/s increase in wind speed). Along with this expansion of the grainfall distance there is an increase in saltation flux over the brink. The increased grainfall distance shifts sand further from the brink resulting in dominant avalanche initiation point locations expanding from 0.3 m to 0.4 m for wind speeds above 6 m/s. This shift also corresponds to the appearance of secondary avalanches, which are initiated by primary avalanche lobe deposits extending outside of the main grainfall zone. Ultimately, under stronger winds the expansion of the grainfall distance contributes to the destabilisation and movement of increased sediment volumes down the lee slope. Avalanches under stronger wind speeds, therefore, increase in thickness, width and length, while during weaker wind speeds, most of the grainfall and grainflow is limited to the upper section of the lee slope. The implication of this dual avalanche behaviour under variable wind

  3. Dynamics of the Bingham Canyon rock avalanches (Utah, USA) resolved from topographic, seismic, and infrasound data: Bingham Canyon Rock Avalanches

    Energy Technology Data Exchange (ETDEWEB)

    Moore, Jeffrey R. [Department of Geology and Geophysics, University of Utah, Salt Lake City Utah USA; Pankow, Kristine L. [Department of Geology and Geophysics, University of Utah, Salt Lake City Utah USA; Ford, Sean R. [Atmospheric, Earth, and Energy Division, Lawrence Livermore National Laboratory, Livermore California USA; Koper, Keith D. [Department of Geology and Geophysics, University of Utah, Salt Lake City Utah USA; Hale, J. Mark [Department of Geology and Geophysics, University of Utah, Salt Lake City Utah USA; Aaron, Jordan [Department of Earth, Ocean and Atmospheric Sciences, University of British Columbia, Vancouver British Columbia Canada; Larsen, Chris F. [Geophysical Institute, University of Alaska Fairbanks, Fairbanks Alaska USA

    2017-03-01

    The 2013 Bingham Canyon Mine rock avalanches represent one of the largest cumulative landslide events in recorded U.S. history and provide a unique opportunity to test remote analysis techniques for landslide characterization. Here we combine aerial photogrammetry surveying, topographic reconstruction, numerical runout modeling, and analysis of broadband seismic and infrasound data to extract salient details of the dynamics and evolution of the multiphase landslide event. Our results reveal a cumulative intact rock source volume of 52 Mm3, which mobilized in two main rock avalanche phases separated by 1.5 h. We estimate that the first rock avalanche had 1.5–2 times greater volume than the second. Each failure initiated by sliding along a gently dipping (21°), highly persistent basal fault before transitioning to a rock avalanche and spilling into the inner pit. The trajectory and duration of the two rock avalanches were reconstructed using runout modeling and independent force history inversion of intermediate-period (10–50 s) seismic data. Intermediate- and shorter-period (1–50 s) seismic data were sensitive to intervals of mass redirection and constrained finer details of the individual slide dynamics. Back projecting short-period (0.2–1 s) seismic energy, we located the two rock avalanches within 2 and 4 km of the mine. Further analysis of infrasound and seismic data revealed that the cumulative event included an additional 11 smaller landslides (volumes ~104–105 m3) and that a trailing signal following the second rock avalanche may result from an air-coupled Rayleigh wave. Our results demonstrate new and refined techniques for detailed remote characterization of the dynamics and evolution of large landslides.

  4. Snow avalanche friction relation based on extended kinetic theory

    Science.gov (United States)

    Rauter, Matthias; Fischer, Jan-Thomas; Fellin, Wolfgang; Kofler, Andreas

    2016-11-01

    Rheological models for granular materials play an important role in the numerical simulation of dry dense snow avalanches. This article describes the application of a physically based model from the field of kinetic theory to snow avalanche simulations. The fundamental structure of the so-called extended kinetic theory is outlined and the decisive model behavior for avalanches is identified. A simplified relation, covering the basic features of the extended kinetic theory, is developed and implemented into an operational avalanche simulation software. To test the obtained friction relation, simulation results are compared to velocity and runout observations of avalanches, recorded from different field tests. As reference we utilize a classic phenomenological friction relation, which is commonly applied for hazard estimation. The quantitative comparison is based on the combination of normalized residuals of different observation variables in order to take into account the quality of the simulations in various regards. It is demonstrated that the extended kinetic theory provides a physically based explanation for the structure of phenomenological friction relations. The friction relation derived with the help of the extended kinetic theory shows advantages to the classic phenomenological friction, in particular when different events and various observation variables are investigated.

  5. Solitary granular avalanches: stability, fingering and theoretical modeling

    Science.gov (United States)

    Malloggi, Florent; Andreotti, Bruno; Clément, Eric; Aronson, Igor; Tsimring, Lev

    2008-03-01

    Avalanching processes do not only occur in the air as we know of snow avalanches, mud flows and land-slides. Such events frequently happen below the see level as they take many forms from turbidity currents to thick sediment waves. In this study we report results on laboratory scale avalanche experiments taking place both in the air and under-water. In both cases a family of stable solitary erosion/deposition waves is observed [1]. At higher inclination angles, we show the existence of a long wavelength transverse instability followed by a coarsening and the onset of a fingering pattern. While the experiments strongly differ by the spatial and time scales, the agreement between the stability diagrams, the wavelengths selection and the avalanche morphology suggest a common erosion/deposition scenario. We also use these erosion/deposition waves to investigate the dynamics of granular flow and jamming in the frame work of the Partial Fluidization Theory (PFT) proposed by Aronson et al. to describe the dynamics of granular matter near jamming [2]. [1] F. Malloggi et al. Europhysics Letters, 2006, Erosion waves: Transverse instabilities and fingering 75, 825-831 [2] I. S. Aranson et al.. Transverse instability of avalanches in granular flows down an incline. Physical Review E, 2006, 73, 050302; I.S.Aronson et al., Non rheological properties of granular flows: exploring the near jamming limit, preprint (2007).

  6. Infrasound monitoring of snow avalanches in the Italian Alps

    Science.gov (United States)

    Ripepe, Maurizio; Ulivieri, Giacomo; Marchetti, Emanuele; Chiambretti, Igor; Segor, Valerio; Pitet, Luca

    2010-05-01

    Risk assessment of snow avalanches is mostly related to weather conditions and snow cover. However a robust risk validation requires to identify all avalanches occurring, in order to compare predictions to real effects. For this purpose on December 2009 we installed a temporary 4-element, small aperture (100 m), infrasound array in the Alps. The array has been deployed south of Mt. Rosa, at an elevation of 2000 m a.s.l. in the valley of Gressoney, where natural avalanches are expected and triggered ones are regularly programmed. The array consists into 4 absolute pressure transducers with a sensitivity of 0.01 Pa in the 0.1-50 Hz frequency band and a 7 channel Guralp CMG-DM24 A/D converter, sampling at 100 Hz. Timing is achieved with a GPS receiver. The array is completely buried in snow. Gel cell batteries and 200 W solar panels provide the array power requirements (~3 W) and should allow a continuous operation during the winter season. A multi-channel semblance is carried out on the continuous data set as a function of slowness, back-azimuth and frequency of recorded infrasound in order to detect all avalanches occurring from the back-ground signal, strongly affected by microbarom and mountain induced gravity waves. This pilot experiment in Italy will allow to verify the efficiency of the system, and might represent an important validation to modeled avalanches activity during this winter season.

  7. The effectiveness of mean-field theory for avalanche distributions

    Science.gov (United States)

    Lee, Edward; Raju, Archishman; Sethna, James

    We explore the mean-field theory of the pseudogap found in avalanche systems with long-range anisotropic interactions using analytical and numerical tools. The pseudogap in the density of low-stability states emerges from the competition between stabilizing interactions between spins in an avalanche and the destabilizing random movement towards the threshold caused by anisotropic couplings. Pazmandi et al. have shown that for the Sherrington-Kirkpatrick model, the pseudogap scales linearly and produces a distribution of avalanche sizes with exponent t=1 in contrast with that predicted from RFIM t=3/2. Lin et al. have argued that the scaling exponent ? of the pseudogap depends on the tail of the distribution of couplings and on non-universal values like the strain rate and the magnitude of the coupling strength. Yet others have argued that the relationship between the pseudogap scaling and the distribution of avalanche sizes is dependent on dynamical details. Despite the theoretical arguments, the class of RFIM mean-field models is surprisingly good at predicting the distribution of avalanche sizes in a variety of different magnetic systems. We investigate these differences with a combination of theory and simulation.

  8. Segregation induced fingering instabilities in granular avalanches

    Science.gov (United States)

    Woodhouse, Mark; Thornton, Anthony; Johnson, Chris; Kokelaar, Pete; Gray, Nico

    2013-04-01

    It is important to be able to predict the distance to which a hazardous natural granular flows (e.g. snow slab avalanches, debris-flows and pyroclastic flows) might travel, as this information is vital for accurate assessment of the risks posed by such events. In the high solids fraction regions of these flows the large particles commonly segregate to the surface, where they are transported to the margins to form bouldery flow fronts. In many natural flows these bouldery margins experience a much greater frictional force, leading to frontal instabilities. These instabilities create levees that channelize the flow vastly increasing the run-out distance. A similar effect can be observed in dry granular experiments, which use a combination of small round and large rough particles. When this mixture is poured down an inclined plane, particle size segregation causes the large particles to accumulate near the margins. Being rougher, the large particles experience a greater friction force and this configuration (rougher material in front of smoother) can be unstable. The instability causes the uniform flow front to break up into a series of fingers. A recent model for particle size-segregation has been coupled to existing avalanche models through a particle concentration dependent friction law. In this talk numerical solutions of this coupled system are presented and compared to both large scale experiments carried out at the USGS flume and more controlled small scale laboratory experiments. The coupled depth-averaged model captures the accumulation of large particles at the flow front. We show this large particle accumulation at the head of the flow can lead to the break-up of the initially uniform front into a series of fingers. However, we are unable to obtain a fully grid-resolved numerical solution; the width of the fingers decreases as the grid is refined. By considering the linear stability of a steady, fully-developed, bidisperse granular layer it is shown that

  9. Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor.

    Science.gov (United States)

    Han, Jin-Woo; Rim, Taiuk; Baek, Chang-Ki; Meyyappan, M

    2015-09-30

    Gas sensors based on metal-oxide-semiconductor transistor with the polysilicon gate replaced by a gas sensitive thin film have been around for over 50 years. These are not suitable for the emerging mobile and wearable sensor platforms due to operating voltages and powers far exceeding the supply capability of batteries. Here we present a novel approach to decouple the chemically sensitive region from the conducting channel for reducing the drive voltage and increasing reliability. This chemically gated field effect transistor uses silicon nanowire for the current conduction channel with a tin oxide film on top of the nanowire serving as the gas sensitive medium. The potential change induced by the molecular adsorption and desorption allows the electrically floating tin oxide film to gate the silicon channel. As the device is designed to be normally off, the power is consumed only during the gas sensing event. This feature is attractive for the battery operated sensor and wearable electronics. In addition, the decoupling of the chemical reaction and the current conduction regions allows the gas sensitive material to be free from electrical stress, thus increasing reliability. The device shows excellent gas sensitivity to the tested analytes relative to conventional metal oxide transistors and resistive sensors.

  10. Precision Blasting Techniques For Avalanche Control

    Science.gov (United States)

    Powell, Kevin M.

    Experimental firings sponsored by the Center For Snow Science at Alta, Utah have demonstrated the potential of a unique prototype shaped charge device designed to stimulate snow pack and ice. These studies, conducted against stable snow pack, demonstrated a fourfold increase in crater volume yield and introduced a novel application of Shock Tube technology to facilitate position control, detonation and dud recovery of manually deployed charges. The extraordinary penetration capability of the shaped charge mechanism has been exploited in many non-military applications to meet a wide range of rapidpiercing and/or cutting requirements. The broader exploitation of the potential of the shaped charge mechanism has nevertheless remained confined to defence based applications. In the studies reported in this paper, the inimitable ability of the shaped charge mechanism to project shock energy, or a liner material, into a highly focussed energetic stream has been applied uniquely to the stimulation of snow pack. Recent research and development work, conducted within the UK, has resulted in the integration of shaped charge technology into a common Avalauncher and hand charge device. The potential of the common charge configuration and spooled Shock Tube fire and control system to improve the safety and cost effectiveness of explosives used in avalanche control operations was successfully demonstrated at Alta in March 2001. Future programmes of study will include focussed shock/blast mechanisms for suspended wire traverse techniques, application of the shaped charge mechanism to helibombing, and the desig n and development of non-fragmenting shaped charge ammunition formilitary artillery gun systems.

  11. Modeling and monitoring avalanches caused by rain-on-snow events

    Science.gov (United States)

    Havens, S.; Marshall, H. P.; Trisca, G. O.; Johnson, J. B.; Nicholson, B.

    2014-12-01

    Direct-action avalanches occur during large storm cycles in mountainous regions, when stresses on the snowpack increase rapidly due to the load of new snow and outpace snow strengthening due to compaction. If temperatures rise above freezing during the storm and snowfall turns to rain, the near-surface snow undergoes rapid densification caused by the introduction of liquid water. This shock to the snowpack, if stability is near critical, can cause widespread immediate avalanching due to the large induced strain rates in the slab, followed by secondary delayed avalanches due to both the increased load as well as water percolation to the depth of a weak layer. We use the semi-empirical SNOow Slope Stability model (SNOSS) to estimate the evolution of stability prior to large avalanches during rain-on-snow events on Highway 21 north of Boise, Idaho. We have continuously monitored avalanche activity using arrays of infrasound sensors in the avalanche-prone section of HW21 near Stanley, in collaboration with the Idaho Transportation Department's avalanche forecasting program. The autonomous infrasound avalanche monitoring system provides accurate timing of avalanche events, in addition to capturing avalanche dynamics during some major releases adjacent to the array. Due to the remote location and low winter traffic volume, the highway is typically closed for multiple days during major avalanche cycles. Many major avalanches typically release naturally and reach the road, but due the complex terrain and poor visibility, manual observations are often not possible until several days later. Since most avalanche programs typically use explosives on a regular basis to control slope stability, the infrasound record of avalanche activity we have recorded on HW21 provides a unique opportunity to study large naturally triggered avalanches. We use a first-order physically based stability model to estimate the importance of precipitation phase, amount, and rate during major rain

  12. Towards an automated detection of avalanche deposits using their directional properties

    OpenAIRE

    2009-01-01

    Snow avalanches killed more people in the Swiss alpine area during the past decades than any other natural hazard. To further improve the avalanche prediction and the protection of people and infrastructure, information about the occurrence and the distribution of avalanche activity is crucial. Nevertheless this information is missing for large parts of the Alpine area. The surface roughness of avalanche deposits differs considerably from the adjacent undisturbed snow cover and is an impor...

  13. Elementary excitations and avalanches in the Coulomb glass

    Science.gov (United States)

    Palassini, Matteo; Goethe, Martin

    2012-07-01

    We study numerically the statistics of elementary excitations and charge avalanches in the classical Coulomb glass model of localized charges with unscreened Coulomb interaction and disorder. We compute the single-particle density of states with an energy minimization algorithm for systems of up to 1003 sites. The shape of the Coulomb gap is consistent with a power-law with exponent δ simeq 2.4 and marginally consistent with exponential behavior. The results are also compared with a recently proposed self-consistent approach. We then analyze the size distribution of the charge avalanches produced by a small perturbation of the system. We show that the distribution decays as a power law in the limit of large system size, and explain this behavior in terms of the elementary excitations. Similarities and differences with the scale-free avalanches observed in mean-field spin glasses are discussed.

  14. Studies of Electron Avalanche Behavior in Liquid Argon

    CERN Document Server

    Kim, J G; Jackson, K H; Kadel, R W; Kadyk, J A; Peskov, Vladimir; Wenzel, W A

    2002-01-01

    Electron avalanching in liquid argon is being studied as a function of voltage, pressure, radiation intensity, and the concentrations of certain additives, especially xenon. The avalanches produced in an intense electric field at the tip of a tungsten needle are initiated by ionization from a moveable americium (241Am) gamma ray source. Photons from xenon excimers are detected as photomultiplier signals in coincidence with the current pulse from the needle. In pure liquid argon the avalanche behavior is erratic, but the addition of even a small amount of xenon (>100ppm) stabilizes the performance. Similar attempts with neon (30%) as an additive to argon have been unsuccessful. Tests with higher energy gamma rays (57Co) yield spectra and other performance characteristics quite similar to those using the 241Am source. Two types of signal pulses are commonly observed: a set of pulses that are sensitive to ambient pressure, and a set of somewhat smaller pulses that are not pressure dependent.

  15. Model of single-electron performance of micropixel avalanche photodiodes

    CERN Document Server

    Sadygov, Z; Akhmedov, G; Akhmedov, F; Khorev, S; Mukhtarov, R; Sadigov, A; Sidelev, A; Titov, A; Zerrouk, F; Zhezher, V

    2014-01-01

    An approximate iterative model of avalanche process in a pixel of micropixel avalanche photodiode initiated by a single photoelectron is presented. The model describes development of the avalanche process in time, taking into account change of electric field within the depleted region caused by internal discharge and external recharge currents. Conclusions obtained as a result of modelling are compared with experimental data. Simulations show that typical durations of the front and rear edges of the discharge current have the same magnitude of less than 50 ps. The front of the external recharge current has the same duration, however duration of the rear edge depends on value of the quenching micro-resistor. It was found that effective capacitance of the pixel calculated as the slope of linear dependence of the pulse charge on bias voltage exceeds its real capacitance by a factor of two.

  16. Controlling avalanche criticality in 2D nano arrays.

    Science.gov (United States)

    Zohar, Y C; Yochelis, S; Dahmen, K A; Jung, G; Paltiel, Y

    2013-01-01

    Many physical systems respond to slowly changing external force through avalanches spanning broad range of sizes. Some systems crackle even without apparent external force, such as bursts of neuronal activity or charge transfer avalanches in 2D molecular layers. Advanced development of theoretical models describing disorder-induced critical phenomena calls for experiments probing the dynamics upon tuneable disorder. Here we show that isomeric structural transitions in 2D organic self-assembled monolayer (SAM) exhibit critical dynamics with experimentally tuneable disorder. The system consists of field effect transistor coupled through SAM to illuminated semiconducting nanocrystals (NCs). Charges photoinduced in NCs are transferred through SAM to the transistor surface and modulate its conductivity. Avalanches of isomeric structural transitions are revealed by measuring the current noise I(t) of the transistor. Accumulated surface traps charges reduce dipole moments of the molecules, decrease their coupling, and thus decrease the critical disorder of the SAM enabling its tuning during experiments.

  17. [Death by avalanche in the minor mountain range].

    Science.gov (United States)

    Geisenberger, Dorothee; Kramer, Lena; Pircher, Rebecca; Pollak, Stefan

    2015-01-01

    On 30 Jan 2015, two avalanche accidents happened in the Black Forest (at the foot of the 1493 m high Feldberg and the Herzogenhorn situated next to it), in which experienced ski tourers--a 58-year-old woman and a 20-year-old man--were completely buried by snow masses. Both victims were recovered dead after nearly 2 hours under the snow. The avalanches were promoted by strong snowfalls, snowdrift by the wind and steep downwind slopes. One of the victims, the 20-year-old man, underwent a forensic autopsy. The findings suggested death by protracted asphyxiation with agonal hypothermia. A mechanical traumatization with internal injuries suspected by the emergency doctor at the scene could not be confirmed at autopsy. The possible causes of death in the avalanche are discussed using the reported case as an example and in reference to the relevant literature.

  18. Flux avalanches in Nb superconducting shifted strip arrays

    Science.gov (United States)

    Tsuchiya, Y.; Mawatari, Y.; Ibuka, J.; Tada, S.; Pyon, S.; Nagasawa, S.; Hidaka, M.; Maezawa, M.; Tamegai, T.

    2013-09-01

    Flux penetrations into three-dimensional Nb superconducting strip arrays, where two layers of strip arrays are stacked by shifting a half period, are studied using a magneto-optical imaging method. Flux avalanches are observed when the overlap between the top and bottom layers is large even if the width of each strip is well below the threshold value. In addition, anomalous linear avalanches perpendicular to the strip are observed in the shifted strip array when the overlap is very large and the thickness of the superconductor is greater than the penetration depth. We discuss possible origins for the flux avalanches, including linear ones, by considering flux penetration calculated by the Campbell method assuming the Bean model.

  19. Experimental method to predict avalanches based on neural networks

    Directory of Open Access Journals (Sweden)

    V. V. Zhdanov

    2016-01-01

    Full Text Available The article presents results of experimental use of currently available statistical methods to classify the avalanche‑dangerous precipitations and snowfalls in the Kishi Almaty river basin. The avalanche service of Kazakhstan uses graphical methods for prediction of avalanches developed by I.V. Kondrashov and E.I. Kolesnikov. The main objective of this work was to develop a modern model that could be used directly at the avalanche stations. Classification of winter precipitations into dangerous snowfalls and non‑dangerous ones was performed by two following ways: the linear discriminant function (canonical analysis and artificial neural networks. Observational data on weather and avalanches in the gorge Kishi Almaty in the gorge Kishi Almaty were used as a training sample. Coefficients for the canonical variables were calculated by the software «Statistica» (Russian version 6.0, and then the necessary formula had been constructed. The accuracy of the above classification was 96%. Simulator by the authors L.N. Yasnitsky and F.М. Cherepanov was used to learn the neural networks. The trained neural network demonstrated 98% accuracy of the classification. Prepared statistical models are recommended to be tested at the snow‑avalanche stations. Results of the tests will be used for estimation of the model quality and its readiness for the operational work. In future, we plan to apply these models for classification of the avalanche danger by the five‑point international scale.

  20. Spectral method for characterization of avalanche photodiode working as single-photon detector.

    Science.gov (United States)

    Cavalcanti, Maria Daniela Santabaia; Mendonça, Fábio Alencar; Ramos, Rubens Viana

    2011-09-01

    In this Letter, a new method for avalanche photodiode characterization, based on the spectral analysis of the photocurrent produced during an avalanche, is proposed. The theory is developed, and an experimental characterization of an avalanche photodiode working in the Geiger mode with CW laser is performed.