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Sample records for hybrid mode-locked semiconductor

  1. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Directory of Open Access Journals (Sweden)

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  2. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

  3. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten

    2003-01-01

    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

  4. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...

  5. Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

    DEFF Research Database (Denmark)

    Thompson, M. G.; Larsson, David; Rae, A. R.

    2006-01-01

    For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs.......For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs....

  6. Deep-red semiconductor monolithic mode-locked lasers

    International Nuclear Information System (INIS)

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A.; Wang, H. L.; Pan, J. Q.; Wang, X. L.; Cui, B. F.; Ding, Y.

    2014-01-01

    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications

  7. Delay differential equations for mode-locked semiconductor lasers.

    Science.gov (United States)

    Vladimirov, Andrei G; Turaev, Dmitry; Kozyreff, Gregory

    2004-06-01

    We propose a new model for passive mode locking that is a set of ordinary delay differential equations. We assume a ring-cavity geometry and Lorentzian spectral filtering of the pulses but do not use small gain and loss and weak saturation approximations. By means of a continuation method, we study mode-locking solutions and their stability. We find that stable mode locking can exist even when the nonlasing state between pulses becomes unstable.

  8. Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser

    Science.gov (United States)

    Alloush, M. Ali; Pilny, Rouven H.; Brenner, Carsten; Klehr, Andreas; Knigge, Andrea; Tränkle, Günther; Hofmann, Martin R.

    2018-02-01

    Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.

  9. Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2004-01-01

    The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order ...

  10. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo

    2005-01-01

    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  11. Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

    Science.gov (United States)

    Kim, Jimyung; Delfyett, Peter J

    2008-07-21

    We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

  12. Identification of amplitude and timing jitter in external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper; Kroh, Marcel

    2004-01-01

    We theoretically and experimentally investigate the dynamics of external-cavity mode-locked semiconductor lasers, focusing on stability properties, optimization of pulsewidth and timing jitter. A new numerical approach allows to clearly separate timing and amplitude jitter....

  13. Analysis of timing jitter in external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2006-01-01

    We develop a comprehensive theoretical description of passive mode-locking in external-cavity mode-locked semiconductor lasers based on a fully distributed time-domain approach. The model accounts for the dispersion of both gain and refractive index, nonlinear gain saturation from ultrafast...... processes, self-phase modulation, and spontaneous emission noise. Fluctuations of the mode-locked pulses are characterized from the fully distributed model using direct integration of noise-skirts in the phase-noise spectrum and the soliton perturbations introduced by Haus. We implement the model in order...

  14. Narrow-band modulation of semiconductor lasers at millimeter wave frequencies (7100 GHz) by mode locking

    International Nuclear Information System (INIS)

    Lau, K.Y.

    1990-01-01

    This paper reports on the possibility of mode locking a semiconductor laser at millimeter wave frequencies approaching and beyond 100 GHz which was investigated theoretically and experimentally. It is found that there are no fundamental theoretical limitations in mode locking at frequencies below 100 GHz. AT these high frequencies, only a few modes are locked and the output usually takes the form of a deep sinusoidal modulation which is synchronized in phase with the externally applied modulation at the intermodal heat frequency. This can be regarded for practical purposes as a highly efficient means of directly modulating an optical carrier over a narrow band at millimeter wave frequencies. Both active and passive mode locking are theoretically possible. Experimentally, predictions on active mode locking have been verified in prior publications up to 40 GHz. For passive mode locking, evidence consistent with passive mode locking was observed in an inhomogeneously pumped GaAIAs laser at a frequency of approximately 70 GHz. A large differential gain-absorption ratio such as that present in an inhomogeneously pumped single quantum well laser is necessary for pushing the passive mode-locking frequency beyond 100 GHz

  15. Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

    Science.gov (United States)

    Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

    2016-02-22

    With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

  16. A net normal dispersion all-fiber laser using a hybrid mode-locking mechanism

    International Nuclear Information System (INIS)

    Xu, Bo; Martinez, Amos; Yamashita, Shinji; Set, Sze Yun; Goh, Chee Seong

    2014-01-01

    We propose and demonstrate an all-fiber, dispersion-mapped, erbium-doped fiber laser with net normal dispersion generating dissipative solitons. The laser is mode-locked by a hybrid mode-locking mechanism consisting of a nonlinear amplifying loop mirror and a carbon nanotube saturable absorber. We achieve self-starting, mode-locked operation generating 2.75 nJ pulses at a fundamental repetition rate of 10.22 MHz with remarkable long term stability. (letter)

  17. Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion and pulse collisions

    NARCIS (Netherlands)

    Koumans, R.G.M.P.; Roijen, van R.

    1996-01-01

    We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other

  18. Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback

    Science.gov (United States)

    Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy

    2017-11-01

    Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

  19. Instability of stationary lasing and self-starting mode locking in external-cavity semiconductor lasers

    International Nuclear Information System (INIS)

    Smetanin, Igor V; Vasil'ev, Petr P

    2009-01-01

    Parameters of external-cavity semiconductor lasers, when the stationary lasing becomes unstable, were analysed within the framework of a theoretical model of self-starting mode locking. In this case, a train of ultrashort pulses can be generated due to intrinsic nonlinearities of the laser medium. A decisive role of the transverse optical field nonuniformity, pump rate, and gain spectral bandwidth in the development of the instability of stationary lasing was demonstrated. (control of laser radiation parameters)

  20. Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection

    OpenAIRE

    Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O

    2004-01-01

    We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

  1. Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

    Science.gov (United States)

    Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

    2018-03-01

    In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

  2. Influence of the nuclear Zeeman effect on mode locking in pulsed semiconductor quantum dots

    Science.gov (United States)

    Beugeling, Wouter; Uhrig, Götz S.; Anders, Frithjof B.

    2017-09-01

    The coherence of the electron spin in a semiconductor quantum dot is strongly enhanced by mode locking through nuclear focusing, where the synchronization of the electron spin to periodic pulsing is slowly transferred to the nuclear spins of the semiconductor material, mediated by the hyperfine interaction between these. The external magnetic field that drives the Larmor oscillations of the electron spin also subjects the nuclear spins to a Zeeman-like coupling, albeit a much weaker one. For typical magnetic fields used in experiments, the energy scale of the nuclear Zeeman effect is comparable to that of the hyperfine interaction, so that it is not negligible. In this work, we analyze the influence of the nuclear Zeeman effect on mode locking quantitatively. Within a perturbative framework, we calculate the Overhauser-field distribution after a prolonged period of pulsing. We find that the nuclear Zeeman effect can exchange resonant and nonresonant frequencies. We distinguish between models with a single type and with multiple types of nuclei. For the latter case, the positions of the resonances depend on the individual g factors, rather than on the average value.

  3. Dynamics of temporally localized states in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Schelte, C.; Javaloyes, J.; Gurevich, S. V.

    2018-05-01

    We study the emergence and the stability of temporally localized structures in the output of a semiconductor laser passively mode locked by a saturable absorber in the long-cavity regime. For large yet realistic values of the linewidth enhancement factor, we disclose the existence of secondary dynamical instabilities where the pulses develop regular and subsequent irregular temporal oscillations. By a detailed bifurcation analysis we show that additional solution branches that consist of multipulse (molecules) solutions exist. We demonstrate that the various solution curves for the single and multipeak pulses can splice and intersect each other via transcritical bifurcations, leading to a complex web of solutions. Our analysis is based on a generic model of mode locking that consists of a time-delayed dynamical system, but also on a much more numerically efficient, yet approximate, partial differential equation. We compare the results of the bifurcation analysis of both models in order to assess up to which point the two approaches are equivalent. We conclude our analysis by the study of the influence of group velocity dispersion, which is only possible in the framework of the partial differential equation model, and we show that it may have a profound impact on the dynamics of the localized states.

  4. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

    2017-08-01

    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  5. On the mechanisms governing the repetition rate of mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2004-01-01

    We investigate the mechanisms influencing the synchronization locking range of mode-locked lasers. We find that changes in repetition rates can be accomodated through a joint interplay of dispersion and pulse shaping effects....

  6. Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

    Science.gov (United States)

    Müller, Juliana; Hauck, Johannes; Shen, Bin; Romero-García, Sebastian; Islamova, Elmira; Azadeh, Saeed Sharif; Joshi, Siddharth; Chimot, Nicolas; Moscoso-Mártir, Alvaro; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2015-04-01

    We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

  7. Short pulse generation in a passively mode-locked photonic crystal semiconductor laser

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper

    2010-01-01

    We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties......We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties...

  8. Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm

    Science.gov (United States)

    Kolodeznyi, E. S.; Novikov, I. I.; Babichev, A. V.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Gadzhiev, I. M.; Buyalo, M. S.; Usikova, A. A.; Ilynskaya, N. D.; Bougrov, V. E.; Egorov, A. Yu

    2017-11-01

    We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.

  9. Experimental investigation of different regimes of mode-locking in a high repetition rate passively mode-locked semiconductor quantum-dot laser.

    Science.gov (United States)

    Kéfélian, Fabien; O'Donoghue, Shane; Todaro, Maria Teresa; McInerney, John; Huyet, Guillaume

    2009-04-13

    We report experimental investigations on a two-section 16-GHz repetition rate InAs/GaAs quantum dot passively mode-locked laser. Near the threshold current, pseudo-periodic Q-switching with complex dynamics is exhibited. Mode-locking operation regimes characterized by different repetition rates and timing jitter levels are encountered up to twice the threshold current. Evolution of the RF spectrum and optical spectrum with current is compared. The different mode-locked regimes are shown to be associated with different spectral and temporal shapes, ranging from 1.3 to 6 ps. This point is discussed by introducing the existence of two different supermodes. Repetition rate evolution and timing jitter increase is attributed to the coupling between the dominant and the secondary supermodes.

  10. Mode-Locked 1.5 um Semiconductor Optical Fiber Ring

    DEFF Research Database (Denmark)

    Pedersen, Niels Vagn; Jakobsen, Kaj Bjarne; Vaa, Michael

    1996-01-01

    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product = 0.7) 1.5 um 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental r...

  11. Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm.

    Science.gov (United States)

    Heck, Martijn J R; Salumbides, Edcel J; Renault, Amandine; Bente, Erwin A J M; Oei, Yok-Siang; Smit, Meint K; van Veldhoven, René; Nötzel, Richard; Eikema, Kjeld S E; Ubachs, Wim

    2009-09-28

    For the first time a detailed study of hybrid mode-locking in two-section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase noise is investigated by detailed radio-frequency and optical spectral studies as well as time-domain studies. The pulse shaping mechanism in these lasers is found to be fundamentally different than the mechanism observed in conventional mode-locked laser diodes, based on quantum well gain or bulk material.

  12. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    Energy Technology Data Exchange (ETDEWEB)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); Posilović, K. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); PBC Lasers GmbH, Hardenbergstrasse 36, 10623 Berlin (Germany); Pohl, J.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)

    2014-10-20

    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm{sup −2} sr{sup −1} are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  13. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    International Nuclear Information System (INIS)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D.; Posilović, K.; Pohl, J.; Weyers, M.

    2014-01-01

    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm −2  sr −1 are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  14. Hybrid silicon mode-locked laser with improved RF power by impedance matching

    Science.gov (United States)

    Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

    2015-02-01

    We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

  15. Dual-wavelength passive and hybrid mode-locking of 3, 4.5 and 10 GHz InAs/InP(100) quantum dot lasers

    NARCIS (Netherlands)

    Tahvili, M.S.; Du, L.; Heck, M.J.R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

    2012-01-01

    We present an investigation of passive and hybrid mode-locking in Fabry-Pérot type two-section InAs/InP(100) quantum dot lasers that show dual wavelength operation. Over the whole current and voltage range for mode-locking of these lasers, the optical output spectra show two distinct lobes. The two

  16. An ultra-long cavity passively mode-locked fiber laser based on nonlinear polarization rotation in a semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Liu, Tonghui; Jia, Dongfang; Yang, Jingwen; Chen, Jiong; Wang, Zhaoying; Yang, Tianxin

    2013-01-01

    In this paper we investigate an ultra-long cavity passively mode-locked fiber laser based on a semiconductor optical amplifier (SOA). Experimental results are presented which indicate that stable mode-locked pulses can be obtained by combining nonlinear polarization rotation (NPR) in the SOA with a polarization controller. By adding a 4 km single mode fiber into the ring cavity, a stable fundamental-order mode-locked pulse train with a repetition rate of 50.72 kHz is generated through the NPR effect in the SOA. The central wavelength, 3 dB bandwidth and single pulse energy of the output pulse are 1543.95 nm, 1.506 nm and 33.12 nJ, respectively. Harmonic mode-locked pulses are also observed in experiments when the parameters are chosen properly. (paper)

  17. Mode-locked 1.5 micrometers semiconductor optical amplifier fiber ring

    DEFF Research Database (Denmark)

    Pedersen, Niels V.; Jakobsen, Kaj Bjarne; Vaa, Michael

    1996-01-01

    The dynamics of a mode-locked SOA fiber ring are investigated experimentally and numerically. Generation of near transform-limited (time-bandwidth product=0.7) 1.5 μm 54 ps FWHM pulses with a peak power of 2.8 mW at a repetition rate of 960 MHz is demonstrated experimentally. The experimental...... results agree well with the simulation results obtained using a transmission line laser model (TLLM) model, Both experiments and numerical simulations show how the RF power and the detuning affect the pulsewidth...

  18. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    International Nuclear Information System (INIS)

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-01-01

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  19. Optical self-injection mode-locking of semiconductor optical amplifier fiber ring with electro-absorption modulation—fundamentals and applications

    International Nuclear Information System (INIS)

    Chi, Yu-Chieh; Lin, Gong-Ru

    2013-01-01

    The optical self-injection mode-locking of a semiconductor optical amplifier incorporated fiber ring laser (SOAFL) with spectrally sliced multi-channel carriers is demonstrated for applications. The synthesizer-free SOAFL pulse-train is delivered by optical injection mode-locking with a 10 GHz self-pulsed electro-absorption modulator (EAM). Such a coupled optical and electronic resonator architecture facilitates a self-feedback oscillation with a higher Q-factor and lower phase/intensity noises when compared with conventional approaches. The theoretical model of such an injection-mode-locking SOAFL is derived to improve the self-pulsating performance of the optical return-to-zero (RZ) carrier, thus providing optimized pulsewidth, pulse extinction ratio, effective Q-factor, frequency variation and timing jitter of 11.4 ps, 9.1 dB, 4 × 10 5 , −1 bi-directional WDM transmission network with down-stream RZ binary phase-shift keying (RZ-BPSK) and up-stream re-modulated RZ on–off-keying (RZ-OOK) formats. Under BPSK/OOK bi-directional data transmission, the self-pulsed harmonic mode-locking SOAFL simultaneously provides four to six WDM channels for down-stream RZ-BPSK and up-stream RZ-OOK formats with receiving sensitivities of −17 and −15.2 dBm at a bit error rate of 10 −9 , respectively. (paper)

  20. Study of the spectral width of intermode beats and optical spectrum of an actively mode-locked three-mirror semiconductor laser

    International Nuclear Information System (INIS)

    Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M; Kuznetsov, Sergei A; Pivtsov, V S

    2005-01-01

    Various oscillation regimes of an actively mode-locked semiconductor laser are studied experimentally. Two types of regimes are found in which the minimal spectral width (∼3.5 kHz) of intermode beats is achieved. The width of the optical spectrum of modes is studied as a function of their locking and the feedback coefficients. The maximum width of the spectrum is ∼3.7 THz. (control of laser radiation parameters)

  1. Optically stabilized Erbium fiber frequency comb with hybrid mode-locking and a broad tunable range of repetition rate.

    Science.gov (United States)

    Yang, Honglei; Wu, Xuejian; Zhang, Hongyuan; Zhao, Shijie; Yang, Lijun; Wei, Haoyun; Li, Yan

    2016-12-01

    We present an optically stabilized Erbium fiber frequency comb with a broad repetition rate tuning range based on a hybrid mode-locked oscillator. We lock two comb modes to narrow-linewidth reference lasers in turn to investigate the best performance of control loops. The control bandwidth of fast and slow piezoelectric transducers reaches 70 kHz, while that of pump current modulation with phase-lead compensation is extended to 32 kHz, exceeding laser intrinsic response. Eventually, simultaneous lock of both loops is realized to totally phase-stabilize the comb, which will facilitate precision dual-comb spectroscopy, laser ranging, and timing distribution. In addition, a 1.8-MHz span of the repetition rate is achieved by an automatic optical delay line that is helpful in manufacturing a secondary comb with a similar repetition rate. The oscillator is housed in a homemade temperature-controlled box with an accuracy of ±0.02  K, which not only keeps high signal-to-noise ratio of the beat notes with reference lasers, but also guarantees self-starting at the same mode-locking every time.

  2. Dual-wavelength passive and hybrid mode-locking of 3, 4.5 and 10 GHz InAs/InP(100) quantum dot lasers.

    Science.gov (United States)

    Tahvili, M S; Du, L; Heck, M J R; Nötzel, R; Smit, M K; Bente, E A J M

    2012-03-26

    We present an investigation of passive and hybrid mode-locking in Fabry-Pérot type two-section InAs/InP(100) quantum dot lasers that show dual wavelength operation. Over the whole current and voltage range for mode-locking of these lasers, the optical output spectra show two distinct lobes. The two lobes provide a coherent bandwidth and are verified to lead to two synchronized optical pulses. The generated optical pulses are elongated in time due to a chirp which shows opposite signs over the two spectral lobes. Self-induced mode-locking in the single-section laser shows that the dual-wavelength spectra correspond to emission from ground state. In the hybrid mode-locking regime, a map of locking range is presented by measuring the values of timing jitter for several values of power and frequency of the external electrical modulating signal. An overview of the systematic behavior of InAs/InP(100) quantum dot mode-locked lasers is presented as conclusion.

  3. Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

    DEFF Research Database (Denmark)

    Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.

    2010-01-01

    We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

  4. Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm

    NARCIS (Netherlands)

    Heck, M.J.R.; Salumbides, E.J.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Veldhoven, van P.J.; Nötzel, R.; Eikema, K.S.E.; Ubachs, W.

    2009-01-01

    For the first time a detailed study of hybrid mode-locking in two- section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase

  5. 18-THz-wide optical frequency comb emitted from monolithic passively mode-locked semiconductor quantum-well laser

    Science.gov (United States)

    Lo, Mu-Chieh; Guzmán, Robinson; Ali, Muhsin; Santos, Rui; Augustin, Luc; Carpintero, Guillermo

    2017-10-01

    We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB linewidth of 450 kHz and 35-dB SNR.

  6. 110 GHz hybrid mode-locked fiber laser with enhanced extinction ratio based on nonlinear silicon-on-insulator micro-ring-resonator (SOI MRR)

    International Nuclear Information System (INIS)

    Liu, Yang; Hsu, Yung; Chow, Chi-Wai; Yang, Ling-Gang; Lai, Yin-Chieh; Yeh, Chien-Hung; Tsang, Hon-Ki

    2016-01-01

    We propose and experimentally demonstrate a new 110 GHz high-repetition-rate hybrid mode-locked fiber laser using a silicon-on-insulator microring-resonator (SOI MRR) acting as the optical nonlinear element and optical comb filter simultaneously. By incorporating a phase modulator (PM) that is electrically driven at a fraction of the harmonic frequency, an enhanced extinction ratio (ER) of the optical pulses can be produced. The ER of the optical pulse train increases from 3 dB to 10 dB. As the PM is only electrically driven by the signal at a fraction of the harmonic frequency, in this case 22 GHz (110 GHz/5 GHz), a low bandwidth PM and driving circuit can be used. The mode-locked pulse width and the 3 dB spectral bandwidth of the proposed mode-locked fiber laser are measured, showing that the optical pulses are nearly transform limited. Moreover, stability evaluation for an hour is performed, showing that the proposed laser can achieve stable mode-locking without the need for optical feedback or any other stabilization mechanism. (letter)

  7. Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser

    International Nuclear Information System (INIS)

    Vasil'ev, Petr P; Kan, H; Ohta, H; Hiruma, T; Tanaka, K A

    2006-01-01

    A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 nm are fabricated. Wavelength tunable ultrashort pulses with duration of 1-2 ps at repetition rates of 0.4-1 GHz are obtained by active mode locking of an external cavity laser. (lasers)

  8. Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Carpintero, G.; Thompson, M. G.; Yvind, Kresten

    2011-01-01

    fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic......Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices...... and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre...

  9. Mode-locked silicon evanescent lasers.

    Science.gov (United States)

    Koch, Brian R; Fang, Alexander W; Cohen, Oded; Bowers, John E

    2007-09-03

    We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).

  10. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    International Nuclear Information System (INIS)

    Rantamäki, Antti; Lyytikäinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G

    2011-01-01

    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  11. Intensity Correlation Analysis on Blue-Violet FemtosecondPulses from a Dispersion-Compensated GaInN Mode-LockedSemiconductor Laser Diode

    Directory of Open Access Journals (Sweden)

    Shunsuke Kono

    2015-09-01

    Full Text Available We investigated the spectral and temporal characteristics of blue-violetfemtosecond optical pulses generated by a passively mode-locked GaInN laser diode ina dispersion-compensated external cavity. The output optical pulses at 400 nm wereanalyzed in detail by intensity auto- and cross-correlation measurements using secondharmonic generation on the surface of a β-BaB2O4 crystal. The obtained results clarifiedwavelength-dependent chirp characteristics of the optical pulses. The analysis suggestedthat a large frequency shift due to saturation in the saturable absorber and gain sectionsplayed an important role in the generation of femtosecond optical pulses.

  12. Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers

    Energy Technology Data Exchange (ETDEWEB)

    Habruseva, T. [CAPPA, Cork Institute of Technology, Cork (Ireland); Tyndall National Institute, Lee Maltings, Cork (Ireland); Aston University, Aston Triangle, B4 7ET Birmingham (United Kingdom); Arsenijević, D.; Kleinert, M.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin (Germany); Huyet, G.; Hegarty, S. P. [CAPPA, Cork Institute of Technology, Cork (Ireland); Tyndall National Institute, Lee Maltings, Cork (Ireland)

    2014-01-13

    Competing approaches exist, which allow control of phase noise and frequency tuning in mode-locked lasers, but no judgement of pros and cons based on a comparative analysis was presented yet. Here, we compare results of hybrid mode-locking, hybrid mode-locking with optical injection seeding, and sideband optical injection seeding performed on the same quantum dot laser under identical bias conditions. We achieved the lowest integrated jitter of 121 fs and a record large radio-frequency (RF) tuning range of 342 MHz with sideband injection seeding of the passively mode-locked laser. The combination of hybrid mode-locking together with optical injection-locking resulted in 240 fs integrated jitter and a RF tuning range of 167 MHz. Using conventional hybrid mode-locking, the integrated jitter and the RF tuning range were 620 fs and 10 MHz, respectively.

  13. Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers

    International Nuclear Information System (INIS)

    Habruseva, T.; Arsenijević, D.; Kleinert, M.; Bimberg, D.; Huyet, G.; Hegarty, S. P.

    2014-01-01

    Competing approaches exist, which allow control of phase noise and frequency tuning in mode-locked lasers, but no judgement of pros and cons based on a comparative analysis was presented yet. Here, we compare results of hybrid mode-locking, hybrid mode-locking with optical injection seeding, and sideband optical injection seeding performed on the same quantum dot laser under identical bias conditions. We achieved the lowest integrated jitter of 121 fs and a record large radio-frequency (RF) tuning range of 342 MHz with sideband injection seeding of the passively mode-locked laser. The combination of hybrid mode-locking together with optical injection-locking resulted in 240 fs integrated jitter and a RF tuning range of 167 MHz. Using conventional hybrid mode-locking, the integrated jitter and the RF tuning range were 620 fs and 10 MHz, respectively

  14. 35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 μm with Fourier-limited pulses

    DEFF Research Database (Denmark)

    Kuntz, M.; Fiol, G.; Laemmlin, M.

    2004-01-01

    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 1.3 ìm. Our investigations show ultrafast absorber recovery times and for the first time transform-limited mode-locked pulses.......We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 1.3 ìm. Our investigations show ultrafast absorber recovery times and for the first time transform-limited mode-locked pulses....

  15. Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

    Science.gov (United States)

    Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

    2012-04-15

    A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

  16. Self-stabilization of a mode-locked femtosecond fiber laser using a photonic bandgap fiber

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

    2010-01-01

    We demonstrate a self-stabilization mechanism of a semiconductor saturable absorber mode-locked linearcavity Yb-doped fiber laser using an intracavity photonic bandgap fiber. This mechanism relies on the spectral shift of the laser pulses to a spectral range of higher anomalous dispersion...... and higher loss of the photonic bandgap fiber, as a reaction to the intracavity power buildup. This, in particular, results in a smaller cavity loss for the stably mode-locked laser, as opposed to the Q-switched mode-locking scenario. The laser provides stable 39–49 pJ pulses of around 230 fs duration at 29...

  17. InP/InGaP quantum-dot SESAM mode-locked Alexandrite laser

    Science.gov (United States)

    Ghanbari, Shirin; Fedorova, Ksenia A.; Krysa, Andrey B.; Rafailov, Edik U.; Major, Arkady

    2018-02-01

    A semiconductor saturable absorber mirror (SESAM) passively mode-locked Alexandrite laser was demonstrated. Using an InP/InGaP quantum-dot saturable absorber mirror, pulse duration of 420 fs at 774 nm was obtained. The laser was pumped at 532 nm and generated 325 mW of average output power in mode-locked regime with a pump power of 7.12 W. To the best of our knowledge, this is the first report of a passively mode-locked Alexandrite laser using SESAM in general and quantum-dot SESAM in particular.

  18. Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media

    International Nuclear Information System (INIS)

    Shi, L W; Chen, Y H; Xu, B; Wang, Z C; Jiao, Y H; Wang, Z G

    2007-01-01

    In this review, the potential of mode-locked lasers based on advanced quantum-dot (QD) active media to generate short optical pulses is analysed. A comprehensive review of experimental and theoretical work on related aspects is provided, including monolithic-cavity mode-locked QD lasers and external-cavity mode-locked QD lasers, as well as mode-locked solid-state and fibre lasers based on QD semiconductor saturable absorber mirrors. Performance comparisons are made for state-of-the-art experiments. Various methods for improving important characteristics of mode-locked pulses such as pulse duration, repetition rate, pulse power, and timing jitter through optimization of device design parameters or mode-locking methods are addressed. In addition, gain switching and self-pulsation of QD lasers are also briefly reviewed, concluding with the summary and prospects. (topical review)

  19. An automatic mode-locked system for passively mode-locked fiber laser

    Science.gov (United States)

    Li, Sha; Xu, Jun; Chen, Guoliang; Mei, Li; Yi, Bo

    2013-12-01

    This paper designs and implements one kind of automatic mode-locked system. It can adjust a passively mode-locked fiber laser to keep steady mode-locked states automatically. So the unsteadiness of traditional passively mode-locked fiber laser can be avoided. The system transforms optical signals into electrical pulse signals and sends them into MCU after processing. MCU calculates the frequency of the signals and judges the state of the output based on a quick judgment algorithm. A high-speed comparator is used to check the signals and the comparison voltage can be adjusted to improve the measuring accuracy. Then by controlling two polarization controllers at an angle of 45degrees to each other, MCU extrudes the optical fibers to change the polarization until it gets proper mode-locked output. So the system can continuously monitor the output signal and get it back to mode-locked states quickly and automatically. States of the system can be displayed on the LCD and PC. The parameters of the steady mode-locked states can be stored into an EEPROM so that the system will get into mode-locked states immediately next time. Actual experiments showed that, for a 6.238MHz passively mode-locked fiber lasers, the system can get into steady mode-locked states automatically in less than 90s after starting the system. The expected lock time can be reduced to less than 20s after follow up improvements.

  20. Chirp of monolithic colliding pulse mode-locked diode lasers

    DEFF Research Database (Denmark)

    Hofmann, M.; Bischoff, S.; Franck, Thorkild

    1997-01-01

    Spectrally resolved streak camera measurements of picosecond pulses emitted by hybridly colliding pulse mode-locked (CPM) laser diodes are presented in this letter. Depending on the modulation frequency both blue-chirped (upchirped) and red-chirped (downchirped) pulses can be observed. The two...... different regimes and the transition between them are characterized experimentally and the behavior is explained on the basis of our model for the CPM laser dynamics. (C) 1997 American Institute of Physics....

  1. Self-mode-locked AlGaInP-VECSEL

    Science.gov (United States)

    Bek, R.; Großmann, M.; Kahle, H.; Koch, M.; Rahimi-Iman, A.; Jetter, M.; Michler, P.

    2017-10-01

    We report the mode-locked operation of an AlGaInP-based semiconductor disk laser without a saturable absorber. The active region containing 20 GaInP quantum wells is used in a linear cavity with a curved outcoupling mirror. The gain chip is optically pumped by a 532 nm laser, and mode-locking is achieved by carefully adjusting the pump spot size. For a pump power of 6.8 W, an average output power of up to 30 mW is reached at a laser wavelength of 666 nm. The pulsed emission is characterized using a fast oscilloscope and a spectrum analyzer, demonstrating stable single-pulse operation at a repetition rate of 3.5 GHz. Intensity autocorrelation measurements reveal a FWHM pulse duration of 22 ps with an additional coherence peak on top, indicating noise-like pulses. The frequency spectrum, as well as the Gaussian beam profile and the measured beam propagation factor below 1.1, shows no influence of higher order transverse modes contributing to the mode-locked operation.

  2. A novel mode-locking technique

    International Nuclear Information System (INIS)

    Chen Shaoh; Chen Youming; Chen Taolue; Si Xiangdong; Yang Yi; Deng Ximing

    1993-01-01

    A novel mode-locked Nd:YAG oscillator has been developed by using an ultrafast photoconductive feedback controlled loop, and mode-locked pulses with a duration of 100ps have been obtained. The energy instability of the pulse trains is ±5%. In this type of mode-locking technology, a type of deep-level doped GaAs (Cr-doped) photoconductive switch, which has a fast response in time and is free of avalance process, is used to drive a Pockels' cell to realize mode-locking. The dark resistance of this type of photoconductive switch is 6 orders of magnitude higher than that of the intrinsic single-crystal silicon, and it can reach a level as high as 10 9 ohms. Consequently, it is able to withstand longterm operation at several thousand DC volts. By means of the photoconductive ohmic switch characteristics, the authors have designed a positive feedback control network which has a very fast response time, and can couple a voltage of up to a thousand volts. Using this unit in a Nd:YAG laser, they have successfully realized a very stable mode-locked pulse train with pulse width shorter than 100 ps. The operation principle, and the results of the preliminary experiments are presented here. 1 ref., 3 figs

  3. Class-A mode-locked lasers: Fundamental solutions

    Science.gov (United States)

    Kovalev, Anton V.; Viktorov, Evgeny A.

    2017-11-01

    We consider a delay differential equation (DDE) model for mode-locked operation in class-A semiconductor lasers containing both gain and absorber sections. The material processes are adiabatically eliminated as these are considered fast in comparison to the delay time for a long cavity device. We determine the steady states and analyze their bifurcations using DDE-BIFTOOL [Engelborghs et al., ACM Trans. Math. Software 28, 1 (2002)]. Multiple forms of coexistence, transformation, and hysteretic behavior of stable steady states and fundamental periodic regimes are discussed in bifurcation diagrams.

  4. Novel design of low-jitter 10 GHz all-active monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Christiansen, Lotte Jin

    2004-01-01

    Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared.......Using a novel design, we have fabricated 10 GHz all-active monolithic mode-locked semiconductor lasers that generate 1.4 ps pulses with record-low timing jitter. The dynamical properties of lasers with 1 and 2 QWs are compared....

  5. A Mode Locked UV-FEL

    CERN Document Server

    Parvin, Parviz

    2004-01-01

    An appropriate resonator has been designed to generate femtosecond mode locked pulses in a UV FEL with the modulator performance based on the gain switching. The gain broadening due to electron energy spread affects on the gain parameters, small signal gain (γ0) and saturation intensity (Is), to determine the optimum output coupling as small.

  6. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  7. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  8. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  9. Terahertz-bandwidth coherence measurements of a quantum dash laser in passive and active mode-locking operation.

    Science.gov (United States)

    Martin, Eamonn; Watts, Regan; Bramerie, Laurent; Shen, Alexandre; Gariah, Harry; Blache, Fabrice; Lelarge, Francois; Barry, Liam

    2012-12-01

    This research carries out coherence measurements of a 42.7 GHz quantum dash (QDash) semiconductor laser when passively, electrically, and optically mode-locked. Coherence of the spectral lines from the mode-locked laser is determined by examining the radio frequency beat-tone linewidth as the mode spacing is increased up to 1.1 THz. Electric-field measurements of the QDash laser are also presented, from which a comparison between experimental results and accepted theory for coherence in passively mode-locked lasers has been performed.

  10. InP femtosecond mode-locked laser in a compound feedback cavity with a switchable repetition rate

    Science.gov (United States)

    Lo, Mu-Chieh; Guzmán, Robinson; Carpintero, Guillermo

    2018-02-01

    A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using on-chip reflectors at both ends, enabling harmonic mode locking. By changing DC-bias conditions, optical mode spacing from 50 to 450 GHz is experimentally demonstrated. Ultrafast pulses shorter than 0.3 ps emitted from this laser diode are shown in autocorrelation traces.

  11. Fourier domain mode-locked swept source at 1050 nm based on a tapered amplifier

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

    2010-01-01

    While swept source optical coherence tomography (OCT) in the 1050 nm range is promising for retinal imaging, there are certain challenges. Conventional semiconductor gain media have limited output power, and the performance of high-speed Fourier domain mode-locked (FDML) lasers suffers from...

  12. Wide-band residual phase-noise measurements on 40-GHz monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Larsson, David; Hvam, Jørn Märcher

    2005-01-01

    We have performed wide-band residual phase-noise measurements on semiconductor 40-GHz mode-locked lasers by employing electrical waveguide components for the radio-frequency circuit. The intrinsic timing jitters of lasers with one, two, and three quantum wells (QW) are compared and our design......-QW laser. There is good agreement between the measured results and existing theory....

  13. Mode-locking via dissipative Faraday instability.

    Science.gov (United States)

    Tarasov, Nikita; Perego, Auro M; Churkin, Dmitry V; Staliunas, Kestutis; Turitsyn, Sergei K

    2016-08-09

    Emergence of coherent structures and patterns at the nonlinear stage of modulation instability of a uniform state is an inherent feature of many biological, physical and engineering systems. There are several well-studied classical modulation instabilities, such as Benjamin-Feir, Turing and Faraday instability, which play a critical role in the self-organization of energy and matter in non-equilibrium physical, chemical and biological systems. Here we experimentally demonstrate the dissipative Faraday instability induced by spatially periodic zig-zag modulation of a dissipative parameter of the system-spectrally dependent losses-achieving generation of temporal patterns and high-harmonic mode-locking in a fibre laser. We demonstrate features of this instability that distinguish it from both the Benjamin-Feir and the purely dispersive Faraday instability. Our results open the possibilities for new designs of mode-locked lasers and can be extended to other fields of physics and engineering.

  14. A mode-locked external-cavity quantum-dot laser with a variable repetition rate

    International Nuclear Information System (INIS)

    Wu Jian; Jin Peng; Li Xin-Kun; Wei Heng; Wu Yan-Hua; Wang Fei-Fei; Chen Hong-Mei; Wu Ju; Wang Zhan-Guo

    2013-01-01

    A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest −3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  15. Control of fibre laser mode-locking by narrow-band Bragg gratings

    International Nuclear Information System (INIS)

    Laegsgaard, J

    2008-01-01

    The use of narrow-band high-reflectivity fibre Bragg gratings (FBGs) as end mirrors in a fibre laser cavity with passive mode-locking provided by a semiconductor saturable absorber mirror (SESAM) is investigated numerically. The FBG is found to control the energy range of stable mode-locking, which may be shifted far outside the regime of SESAM saturation by a suitable choice of FBG and cavity length. The pulse shape is controlled by the combined effects of FBG dispersion and self-phase modulation in the fibres, and a few ps pulses can be obtained with standard uniform FBGs

  16. Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

    Science.gov (United States)

    Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

    2018-05-01

    We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

  17. Instantaneous lineshape analysis of Fourier domain mode-locked lasers.

    Science.gov (United States)

    Todor, Sebastian; Biedermann, Benjamin; Wieser, Wolfgang; Huber, Robert; Jirauschek, Christian

    2011-04-25

    We present a theoretical and experimental analysis of the instantaneous lineshape of Fourier domain mode-locked (FDML) lasers, yielding good agreement. The simulations are performed employing a recently introduced model for FDML operation. Linewidths around 10 GHz are found, which is significantly below the sweep filter bandwidth. The effect of detuning between the sweep filter drive frequency and cavity roundtrip time is studied revealing features that cannot be resolved in the experiment, and shifting of the instantaneous power spectrum against the sweep filter center frequency is analyzed. We show that, in contrast to most other semiconductor based lasers, the instantaneous linewidth is governed neither by external noise sources nor by amplified spontaneous emission, but it is directly determined by the complex FDML dynamics.

  18. Commercial mode-locked vertical external cavity surface emitting lasers

    Science.gov (United States)

    Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

    2018-02-01

    This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

  19. Fabrication and Characterisation of Low-noise Monolithic Mode-locked Lasers

    DEFF Research Database (Denmark)

    Larsson, David

    2007-01-01

    This thesis deals with the fabrication and characterisation of monolithic semiconductor mode-locked lasers for use in optical communication systems. Other foreseeable applications may be as sources in microwave photonics and optical sampling. The thesis also deals with the design and fabrication...... of intracavity monolithically integrated filters. The common dnominator among the diffrent parts of the thesis is how to achieve and measure the lowest possible noise. Achieving low noise has been pinpointed as one of the most important and difficult challenges for semiconductor mode-locked lasers. The main...... result of this thesis are a fabrication process of a monolithic and deeply etched distributed Bragg reflector and a characterisation system for measurement of quantum limitid timing noise at high repetition rates. The Bragg reflector is a key component in achieving transform limited pulses with low noise...

  20. Scaling laws for mode lockings in circle maps

    International Nuclear Information System (INIS)

    Cvitanovic, P.; Shraiman, B.; Soederberg, B.

    1985-06-01

    The self-similar structure of mode lockings for circle maps is studied by means of the associated Farey trees. We investigate numerically several classes of scaling relations implicit in the Farey organization of mode lockings and discuss the extent to which they lead to universal scaling laws. (orig.)

  1. Hybrid anode for semiconductor radiation detectors

    Science.gov (United States)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  2. Heterogeneous Silicon III-V Mode-Locked Lasers

    Science.gov (United States)

    Davenport, Michael Loehrlein

    Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

  3. Testing ultrafast mode-locking at microhertz relative optical linewidth.

    Science.gov (United States)

    Martin, Michael J; Foreman, Seth M; Schibli, T R; Ye, Jun

    2009-01-19

    We report new limits on the phase coherence of the ultrafast mode-locking process in an octave-spanning Ti:sapphire comb.We find that the mode-locking mechanism correlates optical phase across a full optical octave with less than 2.5 microHZ relative linewidth. This result is at least two orders of magnitude below recent predictions for quantum-limited individual comb-mode linewidths, verifying that the mode-locking mechanism strongly correlates quantum noise across the comb spectrum.

  4. Testing ultrafast mode-locking at microhertz relative optical linewidth

    OpenAIRE

    Martin, Michael J.; Foreman, Seth M.; Schibli, T. R.; Ye, Jun

    2008-01-01

    We report new limits on the phase coherence of the ultrafast mode-locking process in an octave-spanning Ti:sapphire comb. We find that the mode-locking mechanism correlates optical phase across a full optical octave with less than 2.5 micro Hz relative linewidth. This result is at least two orders of magnitude below recent predictions for quantum-limited individual comb-mode linewidths, verifying that the mode-locking mechanism strongly correlates quantum noise across the comb spectrum.

  5. Wavelength-tunable prism-coupled external cavity passively mode-locked quantum-dot laser

    International Nuclear Information System (INIS)

    Wu Yan-Hua; Jian Wu; Jin Peng; Wang Fei-Fei; Hu Fa-Jie; Wei Heng; Wang Zhan-Guo

    2015-01-01

    A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm (from 1137.3 nm to 1182.8 nm) under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ. (paper)

  6. Quantum dash based single section mode locked lasers for photonic integrated circuits.

    Science.gov (United States)

    Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

    2014-05-05

    We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs.

  7. High-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser

    International Nuclear Information System (INIS)

    Zhuang, W Z; Chang, M T; Su, K W; Huang, K F; Chen, Y F

    2013-01-01

    We report on high-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser. A semiconductor saturable absorber mirror is developed to achieve synchronously mode-locked operation at two spectral bands centered at 1031.67 and 1049.42 nm with a pulse duration of 1.54 ps and a pulse repetition rate of 80.3 GHz. With a diamond heat spreader to improve the heat removal efficiency, the average output power can be up to 1.1 W at an absorbed pump power of 5.18 W. The autocorrelation traces reveal that the mode-locked pulse is modulated with a beat frequency of 4.92 THz and displays a modulation depth to be greater than 80%. (paper)

  8. The study of 80 MHz self starting passively mode-locked Erbium-Doped Fiber Laser via nonlinear polarization rotation with SESAM

    International Nuclear Information System (INIS)

    Qamar, F.

    2013-01-01

    Erbium-Doped Fiber Laser, EDF L, passively mode-locked via only Nonlinear Polarization Rotation, NPR, and via NPR with Semiconductor Saturable Absorber Mirror, SESAM, is studied. Self start single pulse train with pulse width of 114 fs and repetition rate (PRR) of 80 MHz has been obtained when 55 cm EDFL, passively mode-locked via NPR only. Inserting SESAM in EDFL cavity leads to shorten the pulse width up to 88 fs, increases the amplitude stability up to 96% and lower the phase noise jittering to around 26 fsec. Stable second harmonic self starting passively mode-locked EDFL with pulse width of 284 fs has also been observed only when SESAM was used in the cavity. Multi-pulsed system passively mode-locked via NPR for EDFL length of 80 cm with time difference between the successive multi-pulses ranged from few picoseconds to nanoseconds, has been observed. The time difference can be controlled by the polarizer controller and the half wave plate. Further controlling of the cavity polarization leads to developing the multiple mode locking pulses train to second harmonic mode-locking pulse train with PRR of 160MHz and pulse width of 156 fs. Three harmonic superposed trains of mode locked pulse have been achieved only when SESAM added to the cavity. (author)

  9. Self-mode-locked Nd3+:YAG laser

    International Nuclear Information System (INIS)

    Komarov, A K; Komarov, K P; Kuch'yanov, Aleksandr S

    2003-01-01

    Self-mode-locking was observed in a Nd 3+ :YAG laser with a negative feedback without introducing any nonlinear elements into the laser cavity. The laser generates during pumping 300 - 500-ps single pulses on an axial period. (lasers)

  10. Coupled opto electronic oscillator with a passively mode locked extended cavity diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jeongmin; Jang, Gwang Hoon; Yoon, Duseong; Song, Minsoo; Yoon, Tai Hyun [Korea Univ., Seoul (Korea, Republic of)

    2008-11-15

    An opto electronic oscillator(OEO)has very unique properties compared to the conventional quartz based microwave oscillators in that its oscillation frequency is determined by the beat note frequency of a phase coherent optical frequency comb generated as a side bands to an optical single mode carrier by using an electro optic modulator (EOM)or a direct current modulation of a semiconductor laser. Recently, a different type of OEO called a COEO has been demonstrated, where the optical carrier in the OEO system has been replaced by a mode locked laser so that an EOM or a direct current modulation are no longer necessary, but has potentially a much lower phase noise thanks to the high Q value of the optical frequency comb due to the mode locking mechanism. In this paper, we propose and demonstrate a COEO based on a passively mode locked ECDL at 852nm in which the fourth harmonic of the repetition frequency of the ECDL matched exactly the ground state hyperfine splitting frequency of the Cs atoms.

  11. Coupled opto electronic oscillator with a passively mode locked extended cavity diode laser

    International Nuclear Information System (INIS)

    Lee, Jeongmin; Jang, Gwang Hoon; Yoon, Duseong; Song, Minsoo; Yoon, Tai Hyun

    2008-01-01

    An opto electronic oscillator(OEO)has very unique properties compared to the conventional quartz based microwave oscillators in that its oscillation frequency is determined by the beat note frequency of a phase coherent optical frequency comb generated as a side bands to an optical single mode carrier by using an electro optic modulator (EOM)or a direct current modulation of a semiconductor laser. Recently, a different type of OEO called a COEO has been demonstrated, where the optical carrier in the OEO system has been replaced by a mode locked laser so that an EOM or a direct current modulation are no longer necessary, but has potentially a much lower phase noise thanks to the high Q value of the optical frequency comb due to the mode locking mechanism. In this paper, we propose and demonstrate a COEO based on a passively mode locked ECDL at 852nm in which the fourth harmonic of the repetition frequency of the ECDL matched exactly the ground state hyperfine splitting frequency of the Cs atoms

  12. Device geometry considerations for ridge waveguide quantum dot mode-locked lasers

    International Nuclear Information System (INIS)

    Mee, J K; Raghunathan, R; Lester, L F; Wright, J B

    2014-01-01

    Quantum dot mode-locked lasers have emerged as a leading source for the efficient generation of high-quality optical pulses from a compact package, attracting considerable attention for support of multiple high-speed applications, owing to characteristics such as low noise operation and high pulse peak power, in addition to the ability to multiplex the output pulse train in temporal and frequency domains in order to obtain hundreds of GHz pulse repetition rates potentially operating at 1 Tbps. This topical review provides a detailed explanation into the primary advantages of quantum dots, identifying the key features that have made them superior to other material systems for passive mode-locking in semiconductor lasers. Following this account, the impact of the device's cavity geometry on the operational range of two-section, monolithic passively mode-locked lasers is investigated both experimentally and analytically. A model is described that predicts regimes of pulsed operation as a function of absorber length to gain length ratio. Experimental measurements of the pulse time-domain characteristics over a wide range of operating temperatures are found to be in excellent agreement with analytical predictions. The impact of ridge waveguide design on the operational range is also examined and the key dimensions that most strongly impact efficient operation are identified. (topical review)

  13. Hybrid system of semiconductor and photosynthetic protein

    International Nuclear Information System (INIS)

    Kim, Younghye; Shin, Seon Ae; Lee, Jaehun; Yang, Ki Dong; Nam, Ki Tae

    2014-01-01

    Photosynthetic protein has the potential to be a new attractive material for solar energy absorption and conversion. The development of semiconductor/photosynthetic protein hybrids is an example of recent progress toward efficient, clean and nanostructured photoelectric systems. In the review, two biohybrid systems interacting through different communicating methods are addressed: (1) a photosynthetic protein immobilized semiconductor electrode operating via electron transfer and (2) a hybrid of semiconductor quantum dots and photosynthetic protein operating via energy transfer. The proper selection of materials and functional and structural modification of the components and optimal conjugation between them are the main issues discussed in the review. In conclusion, we propose the direction of future biohybrid systems for solar energy conversion systems, optical biosensors and photoelectric devices. (topical reviews)

  14. Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina; Larsson, David; Semenova, Elizaveta

    2012-01-01

    We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.......We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated....

  15. Pulse properties of external cavity mode locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Kroh, Marcel; Mørk, Jesper

    2006-01-01

    picosecond duration with more than 30 dB trailing pulse suppression. The limiting factors to the device performance are investigated on the basis of a fully-distributed time-domain model.We find that ultrafast gain dynamics effectively reduce the pulse-shaping strength and inhibit the generation...

  16. Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers.

    Science.gov (United States)

    Tandoi, Giuseppe; Ironside, Charles N; Marsh, John H; Bryce, A Catrina

    2012-03-01

    We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition rate of 6.8 GHz and with pulse duration of 0.71 ps. In particular, we compare two GaAs/AlGaAs epilayer designs, a double quantum well design operating at 830 nm and a single quantum well design operating at 795 nm, with vertical mode sizes of 0.5 and 0.75 μm, respectively. We show that a larger mode size not only shifts the mode locking regime of operation towards higher powers, but also produces other improvements in respect of two main failure mechanisms that limit the output power: the catastrophic optical mirror damage and the catastrophic optical saturable absorber damage. For the 830 nm material structure, we also investigate the effect of non-absorbing mirrors on output power and mode locked operation of colliding pulse mode locked lasers.

  17. Two-dimensional Semiconductor-Superconductor Hybrids

    DEFF Research Database (Denmark)

    Suominen, Henri Juhani

    This thesis investigates hybrid two-dimensional semiconductor-superconductor (Sm-S) devices and presents a new material platform exhibiting intimate Sm-S coupling straight out of the box. Starting with the conventional approach, we investigate coupling superconductors to buried quantum well....... To overcome these issues we integrate the superconductor directly into the semiconducting material growth stack, depositing it in-situ in a molecular beam epitaxy system under high vacuum. We present a number of experiments on these hybrid heterostructures, demonstrating near unity interface transparency...

  18. Actively mode-locked diode laser with a mode spacing stability of ∼6 × 10{sup -14}

    Energy Technology Data Exchange (ETDEWEB)

    Zakharyash, V F; Kashirsky, A V; Klementyev, V M [Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2015-10-31

    We have studied mode spacing stability in an actively mode-locked external-cavity semiconductor laser. It has been shown that, in the case of mode spacing pulling to the frequency of a highly stable external microwave signal produced by a hydrogen standard (stability of 4 × 10{sup -14} over an averaging period τ = 10 s), this configuration ensures a mode spacing stability of 5.92 × 10{sup -14} (τ = 10 s). (control of radiation parameters)

  19. Monolithic mode-locked lasers with deeply dry etched Bragg mirror

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    Background: Semiconductor mode-locked lasers are attractive as components in futureultra high-speed telecommunication systems (160-640Gb/s); as picosecond pulse sources,clock-recovery devices and for demultiplexing in Optical Time Division Multiplexing(OTDM) systems. We have recently designed...... it possible to buy epitaxial wafers fromphotonic foundries as in the microelectronic industry.Design: The reflectivity spectrum from the total grating is calculated by matrixmultiplication of the individual periodic grating elements. The period of the grating,given by the mean effective index of the low....... The SiO2-film functions as a mask in the subsequent RIE of thesemiconductor (InP). We are now optimizing the semiconductor RIE to achieve 2 µmdeep waveguides and gratings with smooth vertical sidewalls and smooth bottom surface.This optimization involves optimizing the reaction chamber parameters: CH4/H2...

  20. Mode locking of Yb:GdYAG ceramic lasers with an isotropic cavity

    International Nuclear Information System (INIS)

    Xu, C W; Tang, D Y; Zhu, H Y; Zhang, J

    2013-01-01

    We report on the passive mode locking of a diode pumped Yb:GdYAG ceramic laser with a near isotropic cavity. It is found that the laser could simultaneously mode lock in the two orthogonal principal polarization directions of the cavity, and the mode locked pulses of the two polarizations have identical features and are temporally perfectly synchronized. However, their pulse energy varies out-of-phase periodically, manifesting the antiphase dynamics of mode locked lasers. (letter)

  1. The transient evolution of AM mode locking a TEA CO2laser

    NARCIS (Netherlands)

    van Goor, F.A.; Bonnie, Ronald J.M.; Witteman, W.J.

    1985-01-01

    The evolution of the pulse in an AM mode-locked TEA CO2laser has been investigated. The experiments have been performed by injecting the mode-locked pulses in a high-pressure slave oscillator at various time intervals after the initiation of the mode-lock process. This technique allows the

  2. Diode array pumped, non-linear mirror Q-switched and mode-locked

    Indian Academy of Sciences (India)

    A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser while ...

  3. Dispersion engineering of mode-locked fibre lasers

    Science.gov (United States)

    Woodward, R. I.

    2018-03-01

    Mode-locked fibre lasers are important sources of ultrashort pulses, where stable pulse generation is achieved through a balance of periodic amplitude and phase evolutions. A range of distinct cavity pulse dynamics have been revealed, arising from the interplay between dispersion and nonlinearity in addition to dissipative processes such as filtering. This has led to the discovery of numerous novel operating regimes, offering significantly improved laser performance. In this Topical Review, we summarise the main steady-state pulse dynamics reported to date through cavity dispersion engineering, including average solitons, dispersion-managed solitons, dissipative solitons, giant-chirped pulses and similaritons. Characteristic features and the stabilisation mechanism of each regime are described, supported by numerical modelling, in addition to the typical performance and limitations. Opportunities for further pulse energy scaling are discussed, in addition to considering other recent advances including automated self-tuning cavities and fluoride-fibre-based mid-infrared mode-locked lasers.

  4. Color center lasers passively mode locked by quantum wells

    International Nuclear Information System (INIS)

    Islam, M.N.; Soccolich, C.E.; Bar-Joseph, I.; Sauer, N.; Chang, T.Y.; Miller, B.I.

    1989-01-01

    This paper describes how, using multiple quantum well (MQW) saturable absorbers, the authors passively mode locked a NaCl color center laser to produce 275 fs transform-limited, pedestal-free pulses with as high as 3.7 kW peak power. The pulses are tunable from λ = 1.59 to 1.7 μm by choosing MQW's with different bandgaps. They shortened the output pulses from the laser to 25 fs using the technique of soliton compression in a fiber. The steady-state operation of the laser requires the combination of a fast saturable absorber and gain saturation. In addition to the NaCl laser, they passively mode locked a Tl 0 (1):KCl color center laser and produced -- 22 ps pulses. Although the 275 fs pulses from the NaCl laser are Gaussian, when broadened, the pulses acquire an asymmetric spectrum because of carrier-induced refractive index changes

  5. Mode-locked solid state lasers using diode laser excitation

    Science.gov (United States)

    Holtom, Gary R [Boston, MA

    2012-03-06

    A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. An asymmetric cavity provides relatively large beam spot sizes in gain medium to permit efficient coupling to a volume pumped by a laser diode bar. The cavity can include a collimation region with a controlled beam spot size for insertion of a saturable absorber and dispersion components. Beam spot size is selected to provide stable mode locking based on Kerr lensing. Pulse durations of less than 100 fs can be achieved in Yb:KGW.

  6. The continuous-wave passive mode-locking operation of a diode-pumped mixed Nd:Lu0.5Y0.5VO4 laser

    International Nuclear Information System (INIS)

    Huang, H-T; Xu, J-L; He, J-L; Zhang, S-Y; Xu, J-Q; Zhao, B

    2011-01-01

    We reported a continuous-wave (CW) passively mode-locked Nd:Lu 0.5 Y 0.5 VO 4 laser at 1064 nm. A partially reflective semiconductor saturable absorber mirror was exploited in the Z-typed resonator. The Nd:Lu 0.5 Y 0.5 VO 4 laser generated CW mode-locked pulses with an average output power of 860 mW, a repetition rate of 53.7 MHz, and a pulse duration of 8.7 ps

  7. Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

    Science.gov (United States)

    Nadimi, Mohammad; Waritanant, Tanant; Major, Arkady

    2018-01-01

    We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

  8. Mode locking in overdamped charge-density-wave systems

    International Nuclear Information System (INIS)

    Alstroem, P.; Levinsen, M.T.

    1988-01-01

    We show that the rich mode-locking structure observed in overdamped charge-density-wave (CDW) systems can be understood in terms of a simple model of driven damped 'particles' without inertia in a non-sinusoidal periodic potential. The analysis shows that the nonchaotic system of a driven overdamped CDW without inertia in general has a 'close-to-chaotic' behavior in an appropriate frequency range. Our results also provide a natural basis for studies of spatially extended CDW systems. (orig.)

  9. Narrow Q-switching pulse width and low mode-locking repetition rate Q-switched mode locking with a new coupled laser cavity

    International Nuclear Information System (INIS)

    Peng, J Y; Zheng, Y; Shen, J P; Shi, Y X

    2013-01-01

    An original diode-pumped Q-switched and mode-locked solid state Nd:GdVO 4 laser is demonstrated. The laser operates with double saturable absorbers and a new coupled laser cavity. The Q-switching envelope width is compressed to be about 15 ns and the mode-locking repetition rate is as low as 90 MHz. (paper)

  10. Diode-pumped passively mode-locked sub-picosecond Yb:LuAG ceramic laser

    International Nuclear Information System (INIS)

    Zhu Jiang-Feng; Liu Kai; Wang Jun-Li; Yang Yu; Wang Hui-Bo; Gao Zi-Ye; Jiang Li; Xie Teng-Fei; Chao-Yu Li; Pan Yu-Bai; Wei Zhi-Yi

    2017-01-01

    In this paper the laser activities of a diode-pumped Yb:LuAG ceramic which was prepared by the solid-state reactive sintering method were reported. The maximum output power was 1.86 W in the continuous wave (CW) laser operation, corresponding to a slope efficiency of 53.6%. The CW laser could be tuned from 1030 to 1096 nm by inserting a prism in the cavity. With the assist of a semiconductor saturable absorber mirror (SESAM), passive mode-locking was realized, delivering sub-picosecond pulses with 933 fs duration and an average power of 532 mW at a repetition rate of 90.35 MHz. (paper)

  11. Mode locking in a bismuth fibre laser by using a SESAM

    International Nuclear Information System (INIS)

    Krylov, A A; Dvoirin, V V; Mashinsky, V M; Kryukov, P G; Okhotnikov, O G; Guina, M

    2008-01-01

    By using a semiconductor saturable-absorber mirror (SESAM) optimised for operation in the spectral range from 1100 to 1200 nm, passive mode locking is obtained in a cw bismuth-doped fibre laser. Pumping was performed by a cw ytterbium-doped fibre laser at a wavelength of 1075 nm. The operation of the laser is studied by using either a fibre Bragg grating or a loop fibre Sagnac mirror as the output resonator mirror. Stable laser pulses of duration from 50 ps to 3.5 ns, depending on the output mirror type, were generated. The pulse repetition rate was 11 MHz at a wavelength of ∼1160 nm and the maximum spectral width of 2.1 nm. The maximum average output power was 7.8 mW upon pumping by 1140 mW. (control of laser radiation parameters)

  12. Characterization of a FBG sensor interrogation system based on a mode-locked laser scheme.

    Science.gov (United States)

    Madrigal, Javier; Fraile-Peláez, Francisco Javier; Zheng, Di; Barrera, David; Sales, Salvador

    2017-10-02

    This paper is focused on the characterization of a fiber Bragg grating (FBG) sensor interrogation system based on a fiber ring laser with a semiconductor optical amplifier as the gain medium, and an in-loop electro-optical modulator. This system operates as a switchable active (pulsed) mode-locked laser. The operation principle of the system is explained theoretically and validated experimentally. The ability of the system to interrogate an array of different FBGs in wavelength and spatial domain is demonstrated. Simultaneously, the influence of several important parameters on the performance of the interrogation technique has been investigated. Specifically, the effects of the bandwidth and the reflectivity of the FBGs, the SOA gain, and the depth of the intensity modulation have been addressed.

  13. Inter-comb synchronization by mode-to-mode locking

    Science.gov (United States)

    Chun, Byung Jae; Kim, Young-Jin; Kim, Seung-Woo

    2016-08-01

    Two combs of fiber femtosecond lasers are synchronized through the optical frequency reference created by injection-locking of a diode laser to a single comb mode. Maintaining a mHz-level narrow linewidth, the optical frequency reference permits two combs to be stabilized by mode-to-mode locking with a relative stability of 1.52  ×  10-16 at 10 s with a frequency slip of 2.46 mHz. This inter-comb synchronization can be utilized for applications such as dual-comb spectroscopy or ultra-short pulse synthesis without extra narrow-linewidth lasers.

  14. Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450  kW of peak power.

    Science.gov (United States)

    Akbari, R; Zhao, H; Fedorova, K A; Rafailov, E U; Major, A

    2016-08-15

    The hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated. Using a quantum-dot saturable absorber with a 0.7% (0.5%) modulation depth, the mode-locked laser delivered 90 fs (93 fs) pulses with 3.2 W (2.9 W) of average power at the repetition rate of 77 MHz, corresponding to 462 kW (406 kW) of peak power and 41 nJ (38 nJ) of pulse energy. To the best of our knowledge, this represents the highest average and peak powers generated to date from quantum-dot saturable absorber-based mode-locked lasers.

  15. Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 microm.

    Science.gov (United States)

    Lagatsky, A A; Fusari, F; Calvez, S; Gupta, J A; Kisel, V E; Kuleshov, N V; Brown, C T A; Dawson, M D; Sibbett, W

    2009-09-01

    We report the first demonstration, to our knowledge, of passive mode locking in a Tm(3+), Ho(3+)-codoped KY(WO(4))(2) laser operating in the 2000-2060 nm spectral region. An InGaAsSb-based quantum well semiconductor saturable absorber mirror is used for the initiation and stabilization of the ultrashort pulse generation. Pulses as short as 3.3 ps were generated at 2057 nm with average output powers up to 315 mW at a pulse repetition frequency of 132 MHz for 1.15 W of absorbed pump power at 802 nm from a Ti:sapphire laser.

  16. A SESAM passively mode-locked fiber laser with a long cavity including a band pass filter

    International Nuclear Information System (INIS)

    Song, Rui; Chen, Hong-Wei; Chen, Sheng-Ping; Hou, Jing; Lu, Qi-Sheng

    2011-01-01

    A semiconductor saturable absorber mirror (SESAM) passively mode-locked fiber laser with a long cavity length over 700 m is demonstrated. A band pass filter is inserted into the laser cavity to stabilize the lasing wavelength. Some interesting phenomena are observed and discussed. The central wavelength, repetition rate, average power and single pulse energy of the laser are 1064 nm, 281.5 kHz, 11 mW and 39 nJ, respectively. The laser operates stably without Q-switching instabilities, which greatly reduces the damage opportunities of the SESAM

  17. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.; Kosel, Jü rgen

    2013-01-01

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a

  18. Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Thompson, M.G.; Marinelli, C.; Chu, Y.

    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.......Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance....

  19. 408-fs SESAM mode locked Cr:ZnSe laser

    Science.gov (United States)

    Bu, Xiangbao; Shi, Yuhang; Xu, Jia; Li, Huijuan; Wang, Pu

    2018-01-01

    We report self-starting femtosecond operation of a 127-MHz SESAM mode locked Cr:ZnSe laser around 2420 nm. A thulium doped double clad fiber laser at 1908 nm was used as the pumping source. In the normal dispersion regime, stable pulse pairs with constant phase differences in the multipulse regime were observed. The maximum output power was 342 mW with respect to incident pump power of 4.8 W and the corresponding slope efficiency was 10.4%. By inserting a piece of sapphire plate, dispersion compensation was achieved and the intra-cavity dispersion was moved to the anomalous regime. A maximum output power of 403 mW was obtained and the corresponding slope efficiency was 12.2%. Pulse width was measured to be 408 fs by a collinear autocorrelator using two-photon absorption in an InGaAs photodiode. The laser spectrum in multipulse operation showed a clear periodic modulation.

  20. Anapole nanolasers for mode-locking and ultrafast pulse generation

    KAUST Repository

    Gongora, J. S. Totero; Miroshnichenko, Andrey E.; Kivshar, Yuri S.; Fratalocchi, Andrea

    2017-01-01

    Nanophotonics is a rapidly developing field of research with many suggestions for a design of nanoantennas, sensors and miniature metadevices. Despite many proposals for passive nanophotonic devices, the efficient coupling of light to nanoscale optical structures remains a major challenge. In this article, we propose a nanoscale laser based on a tightly confined anapole mode. By harnessing the non-radiating nature of the anapole state, we show how to engineer nanolasers based on InGaAs nanodisks as on-chip sources with unique optical properties. Leveraging on the near-field character of anapole modes, we demonstrate a spontaneously polarized nanolaser able to couple light into waveguide channels with four orders of magnitude intensity than classical nanolasers, as well as the generation of ultrafast (of 100 fs) pulses via spontaneous mode locking of several anapoles. Anapole nanolasers offer an attractive platform for monolithically integrated, silicon photonics sources for advanced and efficient nanoscale circuitry.

  1. Anapole nanolasers for mode-locking and ultrafast pulse generation

    KAUST Repository

    Gongora, J. S. Totero

    2017-05-31

    Nanophotonics is a rapidly developing field of research with many suggestions for a design of nanoantennas, sensors and miniature metadevices. Despite many proposals for passive nanophotonic devices, the efficient coupling of light to nanoscale optical structures remains a major challenge. In this article, we propose a nanoscale laser based on a tightly confined anapole mode. By harnessing the non-radiating nature of the anapole state, we show how to engineer nanolasers based on InGaAs nanodisks as on-chip sources with unique optical properties. Leveraging on the near-field character of anapole modes, we demonstrate a spontaneously polarized nanolaser able to couple light into waveguide channels with four orders of magnitude intensity than classical nanolasers, as well as the generation of ultrafast (of 100 fs) pulses via spontaneous mode locking of several anapoles. Anapole nanolasers offer an attractive platform for monolithically integrated, silicon photonics sources for advanced and efficient nanoscale circuitry.

  2. Critical Behavior of Light in Mode-Locked Lasers

    Science.gov (United States)

    Weill, Rafi; Rosen, Amir; Gordon, Ariel; Gat, Omri; Fischer, Baruch

    2005-06-01

    Light is shown to exhibit critical and tricritical behavior in passively mode-locked lasers with externally injected pulses. It is a first and unique example of critical phenomena in a one-dimensional many-body light-mode system. The phase diagrams consist of regimes with continuous wave, driven parapulses, spontaneous pulses via mode condensation, and heterogeneous pulses, separated by phase transition lines that terminate with critical or tricritical points. Enhanced non-Gaussian fluctuations and collective dynamics are present at the critical and tricritical points, showing a mode system analog of the critical opalescence phenomenon. The critical exponents are calculated and shown to comply with the mean field theory, which is rigorous in the light system.

  3. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  4. Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

    Energy Technology Data Exchange (ETDEWEB)

    Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

    2014-12-29

    A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

  5. Picosecond pulses from wavelength-swept continuous-wave Fourier domain mode-locked lasers.

    Science.gov (United States)

    Eigenwillig, Christoph M; Wieser, Wolfgang; Todor, Sebastian; Biedermann, Benjamin R; Klein, Thomas; Jirauschek, Christian; Huber, Robert

    2013-01-01

    Ultrafast lasers have a crucial function in many fields of science; however, up to now, high-energy pulses directly from compact, efficient and low-power semiconductor lasers are not available. Therefore, we introduce a new approach based on temporal compression of the continuous-wave, wavelength-swept output of Fourier domain mode-locked lasers, where a narrowband optical filter is tuned synchronously to the round-trip time of light in a kilometre-long laser cavity. So far, these rapidly swept lasers enabled orders-of-magnitude speed increase in optical coherence tomography. Here we report on the generation of ~60-70 ps pulses at 390 kHz repetition rate. As energy is stored optically in the long-fibre delay line and not as population inversion in the laser-gain medium, high-energy pulses can now be generated directly from a low-power, compact semiconductor-based oscillator. Our theory predicts subpicosecond pulses with this new technique in the future.

  6. Comparison of the noise performance of 10GHz QW and QD mode-locked laser diodes

    DEFF Research Database (Denmark)

    Carpintero, Guillermo; Thompson, Mark G.; Yvind, Kresten

    2010-01-01

    This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes.......This paper reports the experimental characterization of the noise performance of a quantum dot and a quantum well 10GHz passive mode locked laser diodes....

  7. Independent tunability of the double-mode-locked cw dye laser.

    LENUS (Irish Health Repository)

    Bourkoff, E

    1979-06-01

    We report a new configuration that enables the double-mode-locked cw dye laser to be independently tunable. In addition, the output coupling at each of the two wavelengths can be independently specified. A series of oscillographs shows some interesting features unique to double mode locking and also shows the effects of varying the two cavity lengths with respect to each other.

  8. Colliding Pulse Mode-Locked Laser Diode using Multimode Interference Reflectors

    NARCIS (Netherlands)

    Gordon Gallegos, Carlos; Guzmán, R.C.; Jimenez, A.; Leijtens, X.J.M.; Carpintero, G.

    2014-01-01

    We present a novel fully monolithic Colliding Pulse Mode-Locked Laser Diode (CPML) using Multimode Interference Reflectors (MMIRs) to create the laser resonator. We demonstrate experimentally for the first time to our knowledge the Colliding Pulse mode-locking of a laser using MMIRs by observation

  9. Active mode locking of quantum cascade lasers in an external ring cavity.

    Science.gov (United States)

    Revin, D G; Hemingway, M; Wang, Y; Cockburn, J W; Belyanin, A

    2016-05-05

    Stable ultrashort light pulses and frequency combs generated by mode-locked lasers have many important applications including high-resolution spectroscopy, fast chemical detection and identification, studies of ultrafast processes, and laser metrology. While compact mode-locked lasers emitting in the visible and near infrared range have revolutionized photonic technologies, the systems operating in the mid-infrared range where most gases have their strong absorption lines, are bulky and expensive and rely on nonlinear frequency down-conversion. Quantum cascade lasers are the most powerful and versatile compact light sources in the mid-infrared range, yet achieving their mode-locked operation remains a challenge, despite dedicated effort. Here we report the demonstration of active mode locking of an external-cavity quantum cascade laser. The laser operates in the mode-locked regime at room temperature and over the full dynamic range of injection currents.

  10. Absorption properties of metal-semiconductor hybrid nanoparticles.

    Science.gov (United States)

    Shaviv, Ehud; Schubert, Olaf; Alves-Santos, Marcelo; Goldoni, Guido; Di Felice, Rosa; Vallée, Fabrice; Del Fatti, Natalia; Banin, Uri; Sönnichsen, Carsten

    2011-06-28

    The optical response of hybrid metal-semiconductor nanoparticles exhibits different behaviors due to the proximity between the disparate materials. For some hybrid systems, such as CdS-Au matchstick-shaped hybrids, the particles essentially retain the optical properties of their original components, with minor changes. Other systems, such as CdSe-Au dumbbell-shaped nanoparticles, exhibit significant change in the optical properties due to strong coupling between the two materials. Here, we study the absorption of these hybrids by comparing experimental results with simulations using the discrete dipole approximation method (DDA) employing dielectric functions of the bare components as inputs. For CdS-Au nanoparticles, the DDA simulation provides insights on the gold tip shape and its interface with the semiconductor, information that is difficult to acquire by experimental means alone. Furthermore, the qualitative agreement between DDA simulations and experimental data for CdS-Au implies that most effects influencing the absorption of this hybrid system are well described by local dielectric functions obtained separately for bare gold and CdS nanoparticles. For dumbbell shaped CdSe-Au, we find a shortcoming of the electrodynamic model, as it does not predict the "washing out" of the optical features of the semiconductor and the metal observed experimentally. The difference between experiment and theory is ascribed to strong interaction of the metal and semiconductor excitations, which spectrally overlap in the CdSe case. The present study exemplifies the employment of theoretical approaches used to describe the optical properties of semiconductors and metal nanoparticles, to achieve better understanding of the behavior of metal-semiconductor hybrid nanoparticles.

  11. Modeling of mode-locked coupled-resonator optical waveguide lasers

    DEFF Research Database (Denmark)

    Agger, Christian; Skovgård, Troels Suhr; Gregersen, Niels

    2010-01-01

    Coupled-resonator optical waveguides made from coupled high-Q photonic crystal nanocavities are investigated for use as cavities in mode-locked lasers. Such devices show great potential in slowing down light and can serve to reduce the cavity length of a mode-locked laser. An explicit expression...... of the emerging pulse train. A range of tuning around this frequency allows for effective mode locking. Finally, noise is added to the generalized single-cavity eigenfrequencies in order to evaluate the effects of fabrication imperfections on the cold-cavity transmission properties and consequently on the locking...

  12. 532 nm continuous wave mode-locked Nd:GdVO4 laser with SESAM

    International Nuclear Information System (INIS)

    Li, L; Liu, J; Liu, M; Liu, S; Chen, F; Wang, W; Wang, Y

    2009-01-01

    We obtain continuous wave mode-locked Nd:GdVO 4 -KTP laser with a SESAM. This is the first report of CW mode-locked Nd:GdVO 4 -KTP laser with a SESAM to our knowledge. 396 mw CW mode-locked pulse is achieved at the incident power of 7.653 W, with the repetition about 95 MHz. The pulse duration is assumed to be 5.5 ps, this is the shortest green pulse of 532 nm with SESAM

  13. Laser dynamics of asynchronous rational harmonic mode-locked fiber soliton lasers

    International Nuclear Information System (INIS)

    Jyu, Siao-Shan; Jiang, Guo-Hao; Lai, Yinchieh

    2013-01-01

    Laser dynamics of asynchronous rational harmonic mode-locked (ARHM) fiber soliton lasers are investigated in detail. In particular, based on the unique laser dynamics of asynchronous mode-locking, we have developed a new method for determining the effective active modulation strength in situ for ARHM lasers. By measuring the magnitudes of the slowly oscillating pulse timing position and central frequency, the effective phase modulation strength at the multiplication frequency of rational harmonic mode-locking can be accurately inferred. The method can be a very useful tool for developing ARHM fiber lasers. (paper)

  14. Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum.

    Science.gov (United States)

    Heck, Martijn J R; Bente, Erwin A J M; Smalbrugge, Barry; Oei, Yok-Siang; Smit, Meint K; Anantathanasarn, Sanguan; Nötzel, Richard

    2007-12-10

    First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 mum is reported. Pulse generation at 4.6 GHz from a 9 mm long device is verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched in time and heavily up-chirped with a value of 20 ps/nm, contrary to what is normally observed in passively mode-locked semiconductor lasers. The complete output spectrum is shown to be coherent over 10 nm. From a 7 mm long device Q-switching is observed over a large operating regime. The lasers have been realized using a fabrication technology that is compatible with further photonic integration. This makes the laser a promising candidate for e.g. a mode-comb generator in a complex photonic chip.

  15. Compact mode-locked diode laser system for high precision frequency comparisons in microgravity

    Science.gov (United States)

    Christopher, H.; Kovalchuk, E. V.; Wicht, A.; Erbert, G.; Tränkle, G.; Peters, A.

    2017-11-01

    Nowadays cold atom-based quantum sensors such as atom interferometers start leaving optical labs to put e.g. fundamental physics under test in space. One of such intriguing applications is the test of the Weak Equivalence Principle, the Universality of Free Fall (UFF), using different quantum objects such as rubidium (Rb) and potassium (K) ultra-cold quantum gases. The corresponding atom interferometers are implemented with light pulses from narrow linewidth lasers emitting near 767 nm (K) and 780 nm (Rb). To determine any relative acceleration of the K and Rb quantum ensembles during free fall, the frequency difference between the K and Rb lasers has to be measured very accurately by means of an optical frequency comb. Micro-gravity applications not only require good electro-optical characteristics but are also stringent in their demand for compactness, robustness and efficiency. For frequency comparison experiments the rather complex fiber laser-based frequency comb system may be replaced by one semiconductor laser chip and some passive components. Here we present an important step towards this direction, i.e. we report on the development of a compact mode-locked diode laser system designed to generate a highly stable frequency comb in the wavelength range of 780 nm.

  16. CsPbBr{sub 3} nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yan; Li, Yue; Xu, Jianqiu; Tang, Yulong, E-mail: yulong@sjtu.edu.cn [Key Laboratory for Laser Plasmas (MOE), Department of Physics and Astronomy, Collaborative Innovation Center of IFSA, Shanghai Jiao Tong University, Shanghai 200240 (China); Hu, Zhiping; Tang, Xiaosheng [Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044 (China)

    2016-06-27

    Cesium lead halide perovskite nanocrystals (CsPbX{sub 3}, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr{sub 3} nanocrystal films and characterize their physical properties. Broadband linear absorption from ∼0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr{sub 3} saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr{sub 3} liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm{sup 2}, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ∼216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ∼1076 nm. This work shows that CsPbBr{sub 3} films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  17. CsPbBr3 nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Science.gov (United States)

    Zhou, Yan; Hu, Zhiping; Li, Yue; Xu, Jianqiu; Tang, Xiaosheng; Tang, Yulong

    2016-06-01

    Cesium lead halide perovskite nanocrystals (CsPbX3, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr3 nanocrystal films and characterize their physical properties. Broadband linear absorption from ˜0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr3 saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr3 liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm2, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ˜216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ˜1076 nm. This work shows that CsPbBr3 films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  18. Dynamics of a broad-band quantum cascade laser: from chaos to coherent dynamics and mode-locking

    Science.gov (United States)

    Columbo, L. L.; Barbieri, S.; Sirtori, C.; Brambilla, M.

    2018-02-01

    The dynamics of a multimode Quantum Cascade Laser, is studied in a model based on effective semiconductor Maxwell-Bloch equations, encompassing key features for the radiationmedium interaction such as an asymmetric, frequency dependent, gain and refractive index as well as the phase-amplitude coupling provided by the Henry factor. By considering the role of the free spectral range and Henry factor, we develop criteria suitable to identify the conditions which allow to destabilize, close to threshold, the traveling wave emitted by the laser and lead to chaotic or regular multimode dynamics. In the latter case our simulations show that the field oscillations are associated to self-confined structures which travel along the laser cavity, bridging mode-locking and solitary wave propagation. In addition, we show how a RF modulation of the bias current leads to active mode-locking yielding high-contrast, picosecond pulses. Our results compare well with recent experiments on broad-band THz-QCLs and may help understanding the conditions for the generation of ultrashort pulses and comb operation in Mid-IR and THz spectral regions

  19. Diode-pumped passively mode-locked composite crystal Nd:Lu0.15Y0.85VO4 laser at 1342.2 nm

    International Nuclear Information System (INIS)

    Qiao, Wenchao; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian; Li, Tao; Zhao, Jia; Zhao, Bin

    2015-01-01

    A diode-pumped mode-locked Nd:Lu 0.15 Y 0.85 VO 4 laser running at 1342.2 nm is firstly demonstrated with a semiconductor saturable absorber mirror (SESAM). Stable mode-locking pulses with the pulse-duration of 15.2 ps and the repetition rate of 32.8 MHz have been achieved. With a pumping power of 7.1 W, an output power of 786 mW was obtained, corresponding to an optical conversion efficiency of 11%. A maximum mode-locked pulse energy was estimated to be 23.96 nJ with a peak power of 1.58 kW. (paper)

  20. Giant Geometrically Amplified Piezoresistance in Metal-Semiconductor Hybrid Resistors

    DEFF Research Database (Denmark)

    Hansen, Ole; Reck, Kasper; Thomsen, Erik Vilain

    2008-01-01

    We show that very high geometrically amplified piezoresistance can indeed be obtained in microstructured metal-semiconductor hybrid devices, even significantly higher amplification factors than the factor of approximately 8 demonstrated recently by Rowe and co-workers may be achieved. However, we...... than the sensitivity of conventional piezoresistors fabricated in the same piezoresistive material. ©2008 American Institute of Physics...

  1. High Gain Hybrid Graphene-Organic Semiconductor Phototransistors

    NARCIS (Netherlands)

    Huisman, Everardus H.; Shulga, Artem G.; Zomer, Paul J.; Tombros, Nikolaos; Bartesaghi, Davide; Bisri, Satria Zulkarnaen; Loi, Maria A.; Koster, L. Jan Anton; van Wees, Bart J.

    2015-01-01

    Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a

  2. Fabrication of a saturable absorber WS2 and its mode locking in solid-state laser

    Science.gov (United States)

    Zhang, Chun-Yu; Zhang, Ling; Tang, Xiao-Ying; Yang, Ying-Ying

    2018-04-01

    We report on a passively mode-locked Nd : LuVO4 laser using a type saturable absorber of tungsten disulfide (WS2) fabricated by chemical vapor deposition method. At the pump power of 3.3 W, 1.18-W average output power of continuous-wave mode-locked laser with optical conversion efficiency of 36% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser based on WS2. The repetition rate of passively mode-locked pulse was 80 MHz with the pulse energy of 14.8 nJ. Our experimental results show that WS2 is an excellent type of saturable absorber.

  3. L-band passively harmonic mode-locked fiber laser based on a graphene saturable absorber

    International Nuclear Information System (INIS)

    Du, J; Zhang, S M; Li, H F; Meng, Y C; Li, X L; Hao, Y P

    2012-01-01

    We have proposed and demonstrated an L-band passively harmonic mode-locked fiber laser based on a graphene saturable absorber (SA). By adjusting the pump power and the polarization controller, we have experimentally observed L-band fundamental and harmonic mode-locked optical pulses. The fundamental optical pulse has the duration of 1.3 ps, and the maximum average output power of 13.16 mW at the incident pump power of 98.8 mW. The order of the harmonic mode-locked optical pulses can be changed over the range from the second to the fourth. From the experimental results, we deduced that the likely origin of the harmonic mode-locked self-stabilization was the result of global and local soliton interactions induced by the unstability continuous wave (CW) components

  4. A 66 fs highly stable single wall carbon nanotube mode locked fiber laser

    International Nuclear Information System (INIS)

    Yu, Zhenhua; Zhang, Xiao; Dong, Xinzheng; Tian, Jinrong; Song, Yanrong; Wang, Yonggang

    2014-01-01

    We demonstrate a highly stable mode locked fiber laser based on single wall carbon nanotubes. The mode locking is achieved by the evanescent field interaction of the propagating light with a single wall carbon nanotube saturable absorber in a microfiber. The pulse width is 66 fs, which, to the best of our knowledge, is the shortest pulse achieved in a carbon nanotube mode locked fiber laser. The maximum average output power is 26 mW, which is about 20 times larger than that of a typical carbon nanotube mode locked fiber laser. The center of the wavelength is 1555 nm, with 54 nm spectral width. The repetition rate is 146 MHz. To investigate the laser’s stability, the output pulses are monitored for 120 h and there is no significant degradation of the laser spectral width or shape. (paper)

  5. Modelling and characterization of colliding-pulse mode-locked (CPM) quantum well lasers. [MPS1

    DEFF Research Database (Denmark)

    Bischoff, Svend; Brorson, S.D.; Franck, T.

    1996-01-01

    A theoretical and experimental study of passive colliding pulse mode-locked quantum well lasers is presented. The theoretical model for the gain dynamics is based on semi-classical density matrixequations. The gain dynamics are characterized exp...

  6. High performance mode locking characteristics of single section quantum dash lasers.

    Science.gov (United States)

    Rosales, Ricardo; Murdoch, S G; Watts, R T; Merghem, K; Martinez, Anthony; Lelarge, Francois; Accard, Alain; Barry, L P; Ramdane, Abderrahim

    2012-04-09

    Mode locking features of single section quantum dash based lasers are investigated. Particular interest is given to the static spectral phase profile determining the shape of the mode locked pulses. The phase profile dependence on cavity length and injection current is experimentally evaluated, demonstrating the possibility of efficiently using the wide spectral bandwidth exhibited by these quantum dash structures for the generation of high peak power sub-picosecond pulses with low radio frequency linewidths.

  7. Study of mode locking in a microwave-pumped diode laser close to the generation threshold

    International Nuclear Information System (INIS)

    Bagaev, Sergei N; Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M; Kuznetsov, Sergei A; Pivtsov, V S

    2004-01-01

    Active mode locking is studied in a diode laser with a three-mirror resonator upon the microwave modulation of the pump current. The mode-locking region with the minimal width of the spectrum of intermode beats is found, when the microwave frequency is close to the intermode frequency of an external resonator. This region is shown to be located close to the threshold pump current. (lasers, active media)

  8. Mode-locked terahertz quantum cascade laser by direct phase synchronization

    International Nuclear Information System (INIS)

    Maussang, K.; Maysonnave, J.; Jukam, N.; Freeman, J. R.; Cavalié, P.; Dhillon, S. S.; Tignon, J.; Khanna, S. P.; Linfield, E. H.; Davies, A. G.; Beere, H. E.; Ritchie, D. A.

    2013-01-01

    Mode-locking of a terahertz quantum cascade laser is achieved using multimode injection seeding. Contrary to standard methods that rely on gain modulation, here a fixed phase relationship is directly imprinted to the laser modes. In this work, we demonstrate the generation of 9 ps phase mode-locked pulses around 2.75 THz. A direct measurement of the emitted field phase shows that it results from the phase of the initial injection

  9. Organic / IV, III-V Semiconductor Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Pang-Leen Ong

    2010-03-01

    Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

  10. Repetition frequency scaling of an all-polarization maintaining erbium-doped mode-locked fiber laser based on carbon nanotubes saturable absorber

    Energy Technology Data Exchange (ETDEWEB)

    Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Jagiello, J.; Lipinska, L. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)

    2015-04-07

    We demonstrate an all-polarization maintaining (PM), mode-locked erbium (Er)-doped fiber laser based on a carbon nanotubes (CNT) saturable absorber (SA). The laser resonator was maximally simplified by using only one passive hybrid component and a pair of fiber connectors with deposited CNTs. The repetition frequency (F{sub rep}) of such a cost-effective and self-starting mode-locked laser was scaled from 54.3 MHz to 358.6 MHz. The highest F{sub rep} was obtained when the total cavity length was shortened to 57 cm. The laser allows ultrashort pulse generation with the duration ranging from 240 fs to 550 fs. Because the laser components were based on PM fibers the laser was immune to the external perturbations and generated laniary polarized light with the degree of polarization (DOP) of 98.7%.

  11. Low-timing-jitter, stretched-pulse passively mode-locked fiber laser with tunable repetition rate and high operation stability

    International Nuclear Information System (INIS)

    Liu, Yuanshan; Zhang, Jian-Guo; Chen, Guofu; Zhao, Wei; Bai, Jing

    2010-01-01

    We design a low-timing-jitter, repetition-rate-tunable, stretched-pulse passively mode-locked fiber laser by using a nonlinear amplifying loop mirror (NALM), a semiconductor saturable absorber mirror (SESAM), and a tunable optical delay line in the laser configuration. Low-timing-jitter optical pulses are stably produced when a SESAM and a 0.16 m dispersion compensation fiber are employed in the laser cavity. By inserting a tunable optical delay line between NALM and SESAM, the variable repetition-rate operation of a self-starting, passively mode-locked fiber laser is successfully demonstrated over a range from 49.65 to 50.47 MHz. The experimental results show that the newly designed fiber laser can maintain the mode locking at the pumping power of 160 mW to stably generate periodic optical pulses with width less than 170 fs and timing jitter lower than 75 fs in the 1.55 µm wavelength region, when the fundamental repetition rate of the laser is continuously tuned between 49.65 and 50.47 MHz. Moreover, this fiber laser has a feature of turn-key operation with high repeatability of its fundamental repetition rate in practice

  12. Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

    Directory of Open Access Journals (Sweden)

    Alex Hayat

    2012-12-01

    Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

  13. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.

    2013-02-13

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device\\'s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.

  14. Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review

    Directory of Open Access Journals (Sweden)

    Jürgen Kosel

    2013-02-01

    Full Text Available The Extraordinary Magnetoresistance (EMR effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device’s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed.

  15. Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review

    Science.gov (United States)

    Sun, Jian; Kosel, Jürgen

    2013-01-01

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device’s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. PMID:28809321

  16. Mode-locking behavior of Izhikevich neurons under periodic external forcing

    Science.gov (United States)

    Farokhniaee, AmirAli; Large, Edward W.

    2017-06-01

    Many neurons in the auditory system of the brain must encode periodic signals. These neurons under periodic stimulation display rich dynamical states including mode locking and chaotic responses. Periodic stimuli such as sinusoidal waves and amplitude modulated sounds can lead to various forms of n :m mode-locked states, in which a neuron fires n action potentials per m cycles of the stimulus. Here, we study mode-locking in the Izhikevich neurons, a reduced model of the Hodgkin-Huxley neurons. The Izhikevich model is much simpler in terms of the dimension of the coupled nonlinear differential equations compared with other existing models, but excellent for generating the complex spiking patterns observed in real neurons. We obtained the regions of existence of the various mode-locked states on the frequency-amplitude plane, called Arnold tongues, for the Izhikevich neurons. Arnold tongue analysis provides useful insight into the organization of mode-locking behavior of neurons under periodic forcing. We find these tongues for both class-1 and class-2 excitable neurons in both deterministic and noisy regimes.

  17. Quasi-continuously pumped passively mode-locked 2.4% doped Nd:YAG oscillator-amplifier system in a bounce geometry

    Science.gov (United States)

    Jelínek, Michal; Kubecek, Vaclav; Cech, Miroslav; Hirsl, Petr

    2010-02-01

    We report on oscillator-amplifier system based on two highly doped 2.4 at. % crystalline Czochralski grown Nd:YAG crystals in a diode pumped bounce geometry configuration under quasi-continuous pumping. The oscillator was passively mode-locked by the semiconductor saturable absorber in transmission mode. The output pulse train consisted of 5 pulses with total energy of 270 μJ and pulse duration of 75 ps. The output train from the oscillator was amplified to the energy of 1 mJ by single pass amplifier.

  18. Passive mode locking of an in-band-pumped Ho:YLiF4 laser at 2.06 μm.

    Science.gov (United States)

    Coluccelli, Nicola; Lagatsky, Alexander; Di Lieto, Alberto; Tonelli, Mauro; Galzerano, Gianluca; Sibbett, Wilson; Laporta, Paolo

    2011-08-15

    We demonstrate the passive mode-locking operation of an in-band-pumped Ho:YLiF(4) laser at 2.06 μm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. A transform-limited pulse train with minimum duration of 1.1 ps and average power of 0.58 W has been obtained at a repetition frequency of 122 MHz. A maximum output power of 1.7 W has been generated with a corresponding pulse duration of 1.9 ps. © 2011 Optical Society of America

  19. Generation of picosecond pulses and frequency combs in actively mode locked external ring cavity quantum cascade lasers

    International Nuclear Information System (INIS)

    Wójcik, Aleksander K.; Belyanin, Alexey; Malara, Pietro; Blanchard, Romain; Mansuripur, Tobias S.; Capasso, Federico

    2013-01-01

    We propose a robust and reliable method of active mode locking of mid-infrared quantum cascade lasers and develop its theoretical description. Its key element is the use of an external ring cavity, which circumvents fundamental issues undermining the stability of mode locking in quantum cascade lasers. We show that active mode locking can give rise to the generation of picosecond pulses and phase-locked frequency combs containing thousands of the ring cavity modes

  20. Mode-locking in an infinite set of coupled circle maps

    International Nuclear Information System (INIS)

    Alstroem, P.; Ritala, R.K.

    1986-06-01

    We show that the mode-locking in coupled circle maps with random phases is very different from that in a single circle map. A finite nonlinearity K c is needed for a step to appear. The width of the step behaves as (K-K c ) 2 . The complete mode-locking (at K=1 for uncoupled maps) behaves singularly as the coupling is turned on. We argue that our model describes the mode-locking in charge-density-wave materials. Our results are in qualitative agreement with experimental observations by Sherwin and Zettl that only few true steps exist in I-V characteristics and that in addition to these there are some 'incomplete' steps. (orig.)

  1. Deep learning and model predictive control for self-tuning mode-locked lasers

    Science.gov (United States)

    Baumeister, Thomas; Brunton, Steven L.; Nathan Kutz, J.

    2018-03-01

    Self-tuning optical systems are of growing importance in technological applications such as mode-locked fiber lasers. Such self-tuning paradigms require {\\em intelligent} algorithms capable of inferring approximate models of the underlying physics and discovering appropriate control laws in order to maintain robust performance for a given objective. In this work, we demonstrate the first integration of a {\\em deep learning} (DL) architecture with {\\em model predictive control} (MPC) in order to self-tune a mode-locked fiber laser. Not only can our DL-MPC algorithmic architecture approximate the unknown fiber birefringence, it also builds a dynamical model of the laser and appropriate control law for maintaining robust, high-energy pulses despite a stochastically drifting birefringence. We demonstrate the effectiveness of this method on a fiber laser which is mode-locked by nonlinear polarization rotation. The method advocated can be broadly applied to a variety of optical systems that require robust controllers.

  2. Gold nanorod saturable absorber for passive mode-locking at 1 μm wavelength

    International Nuclear Information System (INIS)

    Kang, Z; Li, Q; Gao, X J; Jia, Z X; Qin, G S; Qin, W P; Zhang, L; Feng, Y

    2014-01-01

    Gold nanorods (GNRs) were used as a saturable absorber (SA) for passive mode-locking at 1 μm wavelength. The GNR-SA film was fabricated by mixing GNRs with sodium carboxymethylcellulose. The longitudinal surface plasmon resonance absorption of GNRs was used to induce mode-locking. By using the GNR-SA film, stable passive mode-locking at 1039 nm was experimentally demonstrated in an ytterbium-doped fiber laser cavity pumped by a 980 nm laser diode. The laser produced ∼440 ps pulses with a repetition rate of 36.6 MHz and an average output power of ∼1.25 mW for a pump power of ∼82 mW. (letter)

  3. Characteristics and instabilities of mode-locked quantum-dot diode lasers.

    Science.gov (United States)

    Li, Yan; Lester, Luke F; Chang, Derek; Langrock, Carsten; Fejer, M M; Kane, Daniel J

    2013-04-08

    Current pulse measurement methods have proven inadequate to fully understand the characteristics of passively mode-locked quantum-dot diode lasers. These devices are very difficult to characterize because of their low peak powers, high bandwidth, large time-bandwidth product, and large timing jitter. In this paper, we discuss the origin for the inadequacies of current pulse measurement techniques while presenting new ways of examining frequency-resolved optical gating (FROG) data to provide insight into the operation of these devices. Under the assumptions of a partial coherence model for the pulsed laser, it is shown that simultaneous time-frequency characterization is a necessary and sufficient condition for characterization of mode-locking. Full pulse characterization of quantum dot passively mode-locked lasers (QD MLLs) was done using FROG in a collinear configuration using an aperiodically poled lithium niobate waveguide-based FROG pulse measurement system.

  4. Investigation of monolithic passively mode-locked quantum dot lasers with extremely low repetition frequency.

    Science.gov (United States)

    Xu, Tianhong; Cao, Juncheng; Montrosset, Ivo

    2015-01-01

    The dynamical regimes and performance optimization of quantum dot monolithic passively mode-locked lasers with extremely low repetition rate are investigated using the numerical method. A modified multisection delayed differential equation model is proposed to accomplish simulations of both two-section and three-section passively mode-locked lasers with long cavity. According to the numerical simulations, it is shown that fundamental and harmonic mode-locking regimes can be multistable over a wide current range. These dynamic regimes are studied, and the reasons for their existence are explained. In addition, we demonstrate that fundamental pulses with higher peak power can be achieved when the laser is designed to work in a region with smaller differential gain.

  5. An actively mode-locked Ho: YAG solid laser pumped by a Tm: YLF laser

    International Nuclear Information System (INIS)

    Yao, B Q; Cui, Z; Wang, J; Duan, X M; Dai, T Y; Du, Y Q; Yuan, J H; Liu, W

    2015-01-01

    A continuous wave mode-locked (CWML) Ho: YAG laser based on an acousto-optic modulator (AOM) pumped by a 1.9 μm Tm: YLF laser is demonstrated. This is the first time a report on an active CWML Ho: YAG laser has been published. A maximum output power of 1.04 W at 2097.25 nm in the CWML regime is obtained at a pump power of 13.2 W, corresponding to a slope efficiency of 13.3%. The mode-locked pulse repetition frequency is 82.76 MHz and the single pulse energy is 12.57 nJ. The mode-locked pulse width is 102 ps measured through a no-background second harmonic autocorrelation with KTP as the nonlinear crystal. Furthermore, the M 2 factor is calculated to be 1.146. (letter)

  6. Mode-locking in advection-reaction-diffusion systems: An invariant manifold perspective

    Science.gov (United States)

    Locke, Rory A.; Mahoney, John R.; Mitchell, Kevin A.

    2018-01-01

    Fronts propagating in two-dimensional advection-reaction-diffusion systems exhibit a rich topological structure. When the underlying fluid flow is periodic in space and time, the reaction front can lock to the driving frequency. We explain this mode-locking phenomenon using the so-called burning invariant manifolds (BIMs). In fact, the mode-locked profile is delineated by a BIM attached to a relative periodic orbit (RPO) of the front element dynamics. Changes in the type (and loss) of mode-locking can be understood in terms of local and global bifurcations of the RPOs and their BIMs. We illustrate these concepts numerically using a chain of alternating vortices in a channel geometry.

  7. Three types of pulses delivered from a nanotube-mode-locked fiber laser

    International Nuclear Information System (INIS)

    Yao, X K

    2015-01-01

    Three types of pulses are experimentally investigated in a switchable normal-dispersion nanotube-mode-locked fiber laser by adjusting polarizer controller and pump power. They are a standard dissipative-soliton (DS), conventional soliton (CS)-like pulse, and noiselike pulse, which correspond to three mode-locking states. The standard DS with a rectangular spectrum possesses a Gaussian-shape pulse. The CS-like operation has a Lorenz shape, and the spectrum involves several sidebands similar to the CS case. For the noiselike pulse with a bell-shaped spectrum, a 317 fs peak rides upon the 132.5 ps pedestal in the autocorrelation trace. The spectra of these three pulse operations are centered at three close wavelengths. The generation of three such different types of pulses in one identical normal- dispersion laser cavity may find an important application for the future of mode-locked laser research. (paper)

  8. Harmonic Mode-Locked Fiber Laser based on Photonic Crystal Fiber Filled with Topological Insulator Solution

    Directory of Open Access Journals (Sweden)

    Yu-Shan Chen

    2015-04-01

    Full Text Available We reported that the photonic crystal fiber (PCF filled with TI:Bi2Te3 nanosheets solution could act as an effective saturable absorber (SA. Employing this TI-PCF SA device; we constructed an ytterbium-doped all-fiber laser oscillator and achieved the evanescent wave mode-locking operation. Due to the large cavity dispersion; the fundamental mode-locking pulse had the large full width at half maximum (FWHM of 2.33 ns with the repetition rate of ~1.11 MHz; and the radio frequency (RF spectrum with signal-to-noise ratio (SNR of 61 dB. In addition; the transition dynamics from a bunched state of pulses to harmonic mode-locking (HML was also observed; which was up to 26th order.

  9. Harmonic mode-locking using the double interval technique in quantum dot lasers.

    Science.gov (United States)

    Li, Yan; Chiragh, Furqan L; Xin, Yong-Chun; Lin, Chang-Yi; Kim, Junghoon; Christodoulou, Christos G; Lester, Luke F

    2010-07-05

    Passive harmonic mode-locking in a quantum dot laser is realized using the double interval technique, which uses two separate absorbers to stimulate a specific higher-order repetition rate compared to the fundamental. Operating alone these absorbers would otherwise reinforce lower harmonic frequencies, but by operating together they produce the harmonic corresponding to their least common multiple. Mode-locking at a nominal 60 GHz repetition rate, which is the 10(th) harmonic of the fundamental frequency of the device, is achieved unambiguously despite the constraint of a uniformly-segmented, multi-section device layout. The diversity of repetition rates available with this method is also discussed.

  10. Mode-locking of a terahertz laser by direct phase synchronization.

    Science.gov (United States)

    Maysonnave, J; Maussang, K; Freeman, J R; Jukam, N; Madéo, J; Cavalié, P; Rungsawang, R; Khanna, S P; Linfield, E H; Davies, A G; Beere, H E; Ritchie, D A; Dhillon, S S; Tignon, J

    2012-09-10

    A novel scheme to achieve mode-locking of a multimode laser is demonstrated. Traditional methods to produce ultrashort laser pulses are based on modulating the cavity gain or losses at the cavity roundtrip frequency, favoring the pulsed emission. Here, we rather directly act on the phases of the modes, resulting in constructive interference for the appropriated phase relationship. This was performed on a terahertz quantum cascade laser by multimode injection seeding with an external terahertz pulse, resulting in phase mode-locked terahertz laser pulses of 9 ps duration, characterized unambiguously in the time domain.

  11. Pulse-shaping mechanism in colliding-pulse mode-locked laser diodes

    DEFF Research Database (Denmark)

    Bischoff, Svend; Sørensen, Mads Peter; Mørk, J.

    1995-01-01

    The large signal dynamics of passively colliding pulse mode-locked laser diodes is studied. We derive a model which explains modelocking via the interplay of gain and loss dynamics; no bandwidth limiting element is necessary for pulse formation. It is found necessary to have both fast and slow...... absorber dynamics to achieve mode-locking. Significant chirp is predicted for pulses emitted from long lasers, in agreement with experiment. The pulse width shows a strong dependence on both cavity and saturable absorber length. (C) 1995 American Institute of Physics....

  12. Low jitter and high power all-active mode-locked lasers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2003-01-01

    A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and fiber-coupled power of 7 mW.......A novel epitaxial design leading to low loss and low gain saturation improves the properties of 40 GHz mode-locked lasers. We obtain 2.8 ps nearly chirp free pulses with 228 fs jitter and fiber-coupled power of 7 mW....

  13. Three-dimensional graphene based passively mode-locked fiber laser.

    Science.gov (United States)

    Yang, Y; Loeblein, M; Tsang, S H; Chow, K K; Teo, E H T

    2014-12-15

    We present an all-fiber passively mode-locked fiber laser incorporating three-dimensional (3D) graphene as a saturable absorber (SA) for the first time to the best of our knowledge. The 3D graphene is synthesized by template-directed chemical vapor deposition (CVD). The SA is then simply formed by sandwiching the freestanding 3D graphene between two conventional fiber connectors without any deposition process. It is demonstrated that such 3D graphene based SA is capable to produce high quality mode-locked pulses. A passively mode-locked fiber laser is constructed and stable output pulses with a fundamental repetition rate of ~9.9 MHz and a pulse width of ~1 ps are generated from the fiber laser. The average output power of the laser is ~10.5 mW while the output pulse is operating at single pulse region. The results imply that the freestanding 3D graphene can be applied as an effective saturable absorption material for passively mode-locked lasers.

  14. Broadband Fourier domain mode-locked laser for optical coherence tomography at 1060 nm

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

    2012-01-01

    Optical coherence tomography (OCT) in the 1060nm range is interesting for in vivo imaging of the human posterior eye segment (retina, choroid, sclera) due to low absorption in water and deep penetration into the tissue. Rapidly tunable light sources, such as Fourier domain mode-locked (FDML) lasers...

  15. Effects of resonator input power on Kerr lens mode-locked lasers

    Indian Academy of Sciences (India)

    lasers. S KAZEMPOUR, A KESHAVARZ∗ and G HONARASA. Department of Physics, Faculty of Sciences, Shiraz University of Technology, Shiraz, Iran ... Keywords. Femtosecond pulses; Kerr lens sensitivity; Kerr lens mode-locked laser. ... The optical lengths of Kerr medium with thickness d and refractive index n under.

  16. High-power pulsed and CW diode-pumped mode-locked Nd:YAG lasers

    Science.gov (United States)

    Marshall, Larry R.; Hays, A. D.; Kaz, Alex; Kasinski, Jeff; Burnham, R. L.

    1991-01-01

    The operation of both pulsed and CW diode-pumped mode-locked Nd:YAG lasers are presented. The pulsed laser produced 1.0 mJ with pulsewidths of 90 psec at 20 Hz. The CW pumped laser produced 6 W output at 1.064 microns and 3 W output at 532 nm.

  17. The noise of ultrashort pulse mode-locked lasers beyond the slowly varying envelope approximation

    International Nuclear Information System (INIS)

    Takushima, Y; Haus, H A; Kaertner, F X

    2004-01-01

    The zero-point fluctuations in an L-C circuit of finite Q are revisited. The zero-point energy is shown to approach the value of hbarω 0 /2 only in the limit of an infinite Q. A Fabry-Perot resonator, on the other hand, has bounded zero-point energies of its modes that are equal to hbarω n /2 for each resonance. Based on the Fabry-Perot resonator with broadband noise, we analyse the noise of an ultrafast mode-locked laser when the slowly varying envelope approximation (SVEA) is not valid. This is achieved by reinterpreting the quantized form of the master equation of mode locking as an equation of motion for the electric field rather than for the creation operator of a photon. It is found that in this formulation quantum correlations exist that are not present in the SVEA. The correlations become evident in the spectrum of the zero-point fluctuations and therefore in the background noise of the laser. This behaviour can be detected by homodyne detection of the laser output. The linewidth of the frequency comb generated by the mode-locked laser is not affected by these correlations and is given by the Schawlow-Townes linewidth of an equivalent continuous wave taking the additional intracavity loss due to the mode locking process into account

  18. All-fiber Ho-doped mode-locked oscillator based on a graphene saturable absorber

    Czech Academy of Sciences Publication Activity Database

    Sotor, J.; Pawliszewska, M.; Sobon, G.; Kaczmarek, P.; Przewolka, A.; Pasternak, I.; Cajzl, Jakub; Peterka, Pavel; Honzátko, Pavel; Kašík, Ivan; Strupinski, W.; Abramski, K.

    2016-01-01

    Roč. 41, č. 11 (2016), s. 2592-2595 ISSN 0146-9592 R&D Projects: GA ČR GA14-35256S; GA MŠk(CZ) LD15122 Institutional support: RVO:67985882 Keywords : Fiber lasers * Graphene * Mode-locked oscillators Subject RIV: BH - Optics , Masers, Lasers Impact factor: 3.416, year: 2016

  19. All fiber passively mode locked zirconium-based erbium-doped fiber laser

    Science.gov (United States)

    Ahmad, H.; Awang, N. A.; Paul, M. C.; Pal, M.; Latif, A. A.; Harun, S. W.

    2012-04-01

    All passively mode locked erbium-doped fiber laser with a zirconium host is demonstrated. The fiber laser utilizes the Non-Linear Polarization Rotation (NPR) technique with an inexpensive fiber-based Polarization Beam Splitter (PBS) as the mode-locking element. A 2 m crystalline Zirconia-Yttria-Alumino-silicate fiber doped with erbium ions (Zr-Y-Al-EDF) acts as the gain medium and generates an Amplified Spontaneous Emission (ASE) spectrum from 1500 nm to 1650 nm. The generated mode-locked pulses have a spectrum ranging from 1548 nm to more than 1605 nm, as well as a 3-dB bandwidth of 12 nm. The mode-locked pulse train has an average output power level of 17 mW with a calculated peak power of 1.24 kW and energy per pulse of approximately 730 pJ. The spectrum also exhibits a Signal-to-Noise Ratio (SNR) of 50 dB as well as a repetition rate of 23.2 MHz. The system is very stable and shows little power fluctuation, in addition to being repeatable.

  20. Correlation coefficient measurement of the mode-locked laser tones using four-wave mixing.

    Science.gov (United States)

    Anthur, Aravind P; Panapakkam, Vivek; Vujicic, Vidak; Merghem, Kamel; Lelarge, Francois; Ramdane, Abderrahim; Barry, Liam P

    2016-06-01

    We use four-wave mixing to measure the correlation coefficient of comb tones in a quantum-dash mode-locked laser under passive and active locked regimes. We study the uncertainty in the measurement of the correlation coefficient of the proposed method.

  1. Broadband features of passively harmonic mode locking in dispersion-managed erbium-doped all-fiber lasers

    Science.gov (United States)

    Geng, Y.; Li, L.; Shu, C. J.; Wang, Y. F.; Tang, D. Y.; Zhao, L. M.

    2018-06-01

    Broadband features of passively harmonic mode locking (HML) in dispersion-managed erbium-doped all-fiber lasers are explored. The bandwidth of HML state is generally narrower than that of fundamental mode locking before pulse breaking occurs. There exists a broadest bandwidth versus the order of HML. HML state with bandwidth up to 61.5 nm is obtained.

  2. 10-GHz 1.59-μm quantum dash passively mode-locked two-section lasers

    DEFF Research Database (Denmark)

    Dontabactouny, Madhoussoudhana; Rosenberg, C.; Semenova, Elizaveta

    2010-01-01

    This paper reports the fabrication and the characterisation of a 10 GHz two-section passively mode-locked quantum dash laser emitting at 1.59 μm. The potential of the device's mode-locking is investigated through an analytical model taking into account both the material parameters and the laser...

  3. Optical properties of hybrid semiconductor-metal structures

    Energy Technology Data Exchange (ETDEWEB)

    Kreilkamp, L.E.; Pohl, M.; Akimov, I.A.; Yakovlev, D.R.; Bayer, M. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Belotelov, V.I.; Zvezdin, A.K. [A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, 119992 Moscow (Russian Federation); Karczewski, G.; Wojtowicz, T. [Institute of Physics, Polish Academy of Sciences, 02668 Warsaw (Poland); Rudzinski, A.; Kahl, M. [Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund (Germany)

    2012-07-01

    We study the optical properties of hybrid nanostructures comprising a semiconductor CdTe quantum well (QW) separated by a thin CdMgTe cap layer of 40 nm from a patterned gold film. The CdTe/CdMgTe QW structure with a well width of 10nm was grown by molecular beam epitaxy. The one-dimensional periodic gold films on top were made using e-beam lithography and lift-off process. The investigated structures can be considered as plasmonic crystals because the metal films attached to the semiconductor are patterned with a period in the range from 475 to 600 nm, which is comparable to the surface plasmon-polariton (SPP) wavelength. Angle dependent reflection spectra at room temperature clearly show plasmonic resonances. PL spectra taken at low temperatures of about 10 K under below- and above-barrier illumination show significant modifications compared to the unstructured QW sample. The number of emission lines and their position shift change depending on the excitation energy. The role of exciton-SPP coupling and Schottky barrier at the semiconductor-metal interface are discussed.

  4. Mode-locking dynamics in a quantum-dash Fabry-Pérot laser diode for packet based clock recovery applications

    NARCIS (Netherlands)

    Maldonado-Basilio, R.; Parra-Cetina, J.; Latkowski, S.; Landais, P.; Calabretta, N.

    2012-01-01

    We experimentally investigate the locking/unlocking dynamics of a mode-locked QDash laser diode for packet-based clock-recovery applications. Results show 20 ns locking times for the passively and externally synchronized mode-locking mechanisms.

  5. 11-GHz waveguide Nd:YAG laser CW mode-locked with single-layer graphene.

    Science.gov (United States)

    Okhrimchuk, Andrey G; Obraztsov, Petr A

    2015-06-08

    We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires-Tournois interferometer.

  6. Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser

    Science.gov (United States)

    Cao, W. L.; Vaucher, A. M.; Ling, J. D.; Lee, C. H.

    1982-04-01

    Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.

  7. Diode-pumped femtosecond mode-locked Nd, Y-codoped CaF2 laser

    International Nuclear Information System (INIS)

    Zhu, Jiangfeng; Zhang, Lijuan; Gao, Ziye; Wang, Junli; Wang, Zhaohua; Wei, Zhiyi; Su, Liangbi; Zheng, Lihe; Wang, Jingya; Xu, Jun

    2015-01-01

    A passively mode-locked femtosecond laser based on an Nd, Y-codoped CaF 2 disordered crystal was demonstrated. The Y 3+ -codoping in Nd : CaF 2 markedly suppressed the quenching effect and improved the fluorescence quantum efficiency and emission spectra. With a fiber-coupled laser diode as the pump source, the continuous wave tuning range covering from 1042 to 1076 nm was realized, while the mode-locked operation generated 264 fs pulses with an average output power of 180 mW at a repetition rate of 85 MHz. The experimental results show that the Nd, Y-codoped CaF 2 disordered crystal has potential in a new generation diode-pumped high repetition rate chirped pulse amplifier. (letter)

  8. Active mode-locking of mid-infrared quantum cascade lasers with short gain recovery time.

    Science.gov (United States)

    Wang, Yongrui; Belyanin, Alexey

    2015-02-23

    We investigate the dynamics of actively modulated mid-infrared quantum cascade lasers (QCLs) using space- and time-domain simulations of coupled density matrix and Maxwell equations with resonant tunneling current taken into account. We show that it is possible to achieve active mode locking and stable generation of picosecond pulses in high performance QCLs with a vertical laser transition and a short gain recovery time by bias modulation of a short section of a monolithic Fabry-Perot cavity. In fact, active mode locking in QCLs with a short gain recovery time turns out to be more robust to the variation of parameters as compared to previously studied lasers with a long gain recovery time. We investigate the effects of spatial hole burning and phase locking on the laser output.

  9. Optimizing the active region of interband cascade lasers for passive mode-locking

    Directory of Open Access Journals (Sweden)

    K. Ryczko

    2017-01-01

    Full Text Available The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.

  10. Dual comb generation from a mode-locked fiber laser with orthogonally polarized interlaced pulses.

    Science.gov (United States)

    Akosman, Ahmet E; Sander, Michelle Y

    2017-08-07

    Ultra-high precision dual-comb spectroscopy traditionally requires two mode-locked, fully stabilized lasers with complex feedback electronics. We present a novel mode-locked operation regime in a thulium-holmium co-doped fiber laser, a frequency-halved state with orthogonally polarized interlaced pulses, for dual comb generation from a single source. In a linear fiber laser cavity, an ultrafast pulse train composed of co-generated, equal intensity and orthogonally polarized consecutive pulses at half of the fundamental repetition rate is demonstrated based on vector solitons. Upon optical interference of the orthogonally polarized pulse trains, two stable microwave RF beat combs are formed, effectively down-converting the optical properties into the microwave regime. These co-generated, dual polarization interlaced pulse trains, from one all-fiber laser configuration with common mode suppression, thus provide an attractive compact source for dual-comb spectroscopy, optical metrology and polarization entanglement measurements.

  11. Passively mode-locked Nd:YVO4 laser operating at 1073 nm and 1085 nm

    Science.gov (United States)

    Waritanant, Tanant; Major, Arkady

    2018-02-01

    A passively mode-locked Nd:YVO4 laser operating at 1073 nm and 1085 nm was demonstrated with an intracavity birefringent filter as the wavelength selecting element. The average output powers achieved were 2.17 W and 2.18 W with optical-to-optical efficiency of 19.6% and 19.7%, respectively. The slope efficiencies were more than 31% at both output wavelengths. The pulse durations at the highest average output power were 10.3 ps and 8.4 ps, respectively. We believe that this is the first report of mode locking of a Nd:YVO4 laser operating at 1073 nm or 1085 nm lines.

  12. Diode-pumped Kerr-lens mode-locked femtosecond Yb:YAG ceramic laser

    Science.gov (United States)

    Zi-Ye, Gao; Jiang-Feng, Zhu; Ke, Wang; Jun-Li, Wang; Zhao-Hua, Wang; Zhi-Yi, Wei

    2016-02-01

    We experimentally demonstrated a diode-pumped Kerr-lens mode-locked femtosecond laser based on an Yb:YAG ceramic. Stable laser pulses with 97-fs duration, 2.8-nJ pulse energy, and 320-mW average power were obtained. The femtosecond oscillator operated at a central wavelength of 1049 nm and a repetition rate of 115 MHz. To the best of our knowledge, this is the first demonstration of a Kerr-lens mode-locked operation in a diode-pumped Yb:YAG ceramic laser with sub-100 fs pulse duration. Project supported by the National Major Scientific Instrument Development Project of China (Grant No. 2012YQ120047), the National Natural Science Foundation of China (Grant No. 61205130), and the Fundamental Research Funds for the Central Universities, China (Grant No. JB140502).

  13. Tungsten diselenide for mode-locked erbium-doped fiber lasers with short pulse duration

    Science.gov (United States)

    Liu, Wenjun; Liu, Mengli; OuYang, Yuyi; Hou, Huanran; Ma, Guoli; Lei, Ming; Wei, Zhiyi

    2018-04-01

    In this paper, a WSe2 film prepared by chemical vapor deposition (CVD) is transferred onto a tapered fiber, and a WSe2 saturable absorber (SA) is fabricated. In order to measure the third-order optical nonlinearity of the WSe2, the Z-scan technique is applied. The modulation depth of the WSe2 SA is measured as being 21.89%. Taking advantage of the remarkable nonlinear absorption characteristic of the WSe2 SA, a mode-locked erbium-doped fiber laser is demonstrated at 1557.4 nm with a bandwidth of 25.8 nm and signal to noise ratio of 96 dB. To the best of our knowledge, the pulse duration of 163.5 fs is confirmed to be the shortest compared with previous mode-locked fiber lasers based on transition-metal dichalcogenides SAs. These results indicate that WSe2 is a powerful competitor in the application of ultrashort pulse lasers.

  14. Mode-locked fiber laser using SU8 resist incorporating carbon nanotubes

    Science.gov (United States)

    Hernandez-Romano, Ivan; Mandridis, Dimitrios; May-Arrioja, Daniel A.; Sanchez-Mondragon, Jose J.; Delfyett, Peter J.

    2011-06-01

    We report the fabrication of a saturable absorber made of a novel polymer SU8 doped with Single Wall Carbon Nanotubes (SWCNTs). A passive mode-locked ring cavity fiber laser was built with a 100 μm thick SU8/SWCNT film inserted between two FC/APC connectors. Self-starting passively mode-locked lasing operation was observed at 1572.04 nm, with a FWHM of 3.26 nm. The autocorrelation trace was 1.536 ps corresponding to a pulse-width of 871 fs. The time-bandwidth product was 0.344, which is close enough to transform-limited sech squared pulses. The repetition rate was 21.27 MHz, and a maximum average output power of 1 mW was also measured.

  15. Quasiperiodicity, mode-locking, and universal scaling in Rayleigh-Benard convection

    International Nuclear Information System (INIS)

    Ecke, R.E.

    1990-01-01

    This major review paper describes research on a model nonlinear dynamical system of small-aspect-ratio Rayleigh-Benard convection in 3 He - 4 He mixtures. The nonlinear effects of mode locking and quasiperiodic behavior are described. Analysis techniques for characterizing the state of the dynamical system include Fourier transforms, Poincare sections, phase differences, transients, multifractal f(∝) spectra and scaling function dynamics. Theoretical results such as the fractal staircase of mode-locked intervals and the Arnold tongues are reproduced in experimental data. New techniques for analyzing scaling dynamics are developed and discussed. This is a tutorial article that introduces the major important concepts in nonlinear dynamics and focuses on experimental problems and techniques. 77 refs

  16. Tunneling conductance in semiconductor-superconductor hybrid structures

    Science.gov (United States)

    Stenger, John; Stanescu, Tudor D.

    2017-12-01

    We study the differential conductance for charge tunneling into a semiconductor wire-superconductor hybrid structure, which is actively investigated as a possible scheme for realizing topological superconductivity and Majorana zero modes. The calculations are done based on a tight-binding model of the heterostructure using both a Blonder-Tinkham-Klapwijk approach and a Keldysh nonequilibrium Green's function method. The dependence of various tunneling conductance features on the coupling strength between the semiconductor and the superconductor, the tunnel barrier height, and temperature is systematically investigated. We find that treating the parent superconductor as an active component of the system, rather than a passive source of Cooper pairs, has qualitative consequences regarding the low-energy behavior of the differential conductance. In particular, the presence of subgap states in the parent superconductor, due to disorder and finite magnetic fields, leads to characteristic particle-hole asymmetric features and to the breakdown of the quantization of the zero-bias peak associated with the presence of Majorana zero modes localized at the ends of the wire. The implications of these findings for the effort toward the realization of Majorana bound states with true non-Abelian properties are discussed.

  17. Hysteresis phenomena and multipulse formation of a dissipative system in a passively mode-locked fiber laser

    International Nuclear Information System (INIS)

    Liu Xueming

    2010-01-01

    A model describing the dissipative soliton evolution in a passively mode-locked fiber laser is proposed by using the nonlinear polarization rotation technique and the spectral filtering effect. It is numerically found that the laser alternately evolves on the stable and unstable mode-locking states as a function of the pump strength. Numerical simulations show that the passively mode-locked fiber lasers with large net normal dispersion can operate on multiple pulse behavior and hysteresis phenomena. The experimental observations confirm the theoretical predictions. The theoretical and experimental results achieved are qualitatively distinct from those observed in net-anomalous-dispersion conventional-soliton fiber lasers.

  18. Dynamics of a Dispersion-Managed Passively Mode-Locked Er-Doped Fiber Laser Using Single Wall Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Norihiko Nishizawa

    2015-07-01

    Full Text Available We investigated the dynamics of a dispersion-managed, passively mode-locked, ultrashort-pulse, Er-doped fiber laser using a single-wall carbon nanotube (SWNT device. A numerical model was constructed for analysis of the SWNT fiber laser. The initial process of passive mode-locking, the characteristics of the output pulse, and the dynamics inside the cavity were investigated numerically for soliton, dissipative-soliton, and stretched-pulse mode-locking conditions. The dependencies on the total dispersion and recovery time of the SWNTs were also examined. Numerical results showed similar behavior to experimental results.

  19. Compact and high repetition rate Kerr-lens mode-locked 532 nm Nd:YVO4 laser

    International Nuclear Information System (INIS)

    Li, Zuohan; Peng, Jiying; Yuan, Ruixia; Yao, Jianquan; Zheng, Yi; Wang, Tongtong

    2015-01-01

    A compact and feasible CW Kerr-lens-induced mode-locked 532 nm Nd:YVO 4 laser system was experimentally demonstrated for the first time with theoretical analysis. Kerr-lens mode locking with intracavity second harmonic generation provides a promising method to generate a high-repetition-rate picosecond green laser. With an incident pump power of 6 W, the average output power of mode locking was 258 mW at a high repetition rate of 1.1 GHz. (paper)

  20. A PASSIVELY MODE-LOCKED CR4+:FORSTERITE LASER WITH ELEСTRONICALLY CONTROLLED OUTPUT CHARACTERISTICS

    Directory of Open Access Journals (Sweden)

    S. A. Zolotovskaya

    2011-01-01

    Full Text Available Applicability of electronic control of laser output parameters to bulk solid-state laser sources is demonstrated. A single laser source with variable pulse duration for novel imaging and manipulation systems is presented. Stable passive mode-locking of a Cr4+:forsterite laser using a voltage controlled p-n junction quantum dot saturable absorber was achieved. Output shortening from 17,4 to 6,4 ps near-transform limited pulses was obtained by applying reverse bias.

  1. Instant recording of the duration of a single mode-locked Nd:YAG laser pulse

    International Nuclear Information System (INIS)

    Lompre, L.A.; Mainfray, G.; Thebault, J.

    1975-01-01

    An electro-optic streak camera incorporating a storage memory video system has been developed and used to instantly visualize and record the shape of a 1.06-μ-wavelength pulse generated by a mode-locked Nd:YAG laser. The duration of a single laser pulse (approximately 30 psec) has been directly measured with and without laser amplification. (U.S.)

  2. All-fiber nonlinearity- and dispersion-managed dissipative soliton nanotube mode-locked laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Nanjing University of Posts and Communications, Nanjing 210003 (China); Popa, D., E-mail: dp387@cam.ac.uk; Wittwer, V. J.; Milana, S.; Hasan, T.; Jiang, Z.; Ferrari, A. C. [Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Ilday, F. Ö. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara (Turkey)

    2015-12-14

    We report dissipative soliton generation from an Yb-doped all-fiber nonlinearity- and dispersion-managed nanotube mode-locked laser. A simple all-fiber ring cavity exploits a photonic crystal fiber for both nonlinearity enhancement and dispersion compensation. The laser generates stable dissipative solitons with large linear chirp in the net normal dispersion regime. Pulses that are 8.7 ps long are externally compressed to 118 fs, outperforming current nanotube-based Yb-doped fiber laser designs.

  3. Femtosecond Mode-locked Fiber Laser at 1 μm Via Optical Microfiber Dispersion Management.

    Science.gov (United States)

    Wang, Lizhen; Xu, Peizhen; Li, Yuhang; Han, Jize; Guo, Xin; Cui, Yudong; Liu, Xueming; Tong, Limin

    2018-03-16

    Mode-locked Yb-doped fiber lasers around 1 μm are attractive for high power applications and low noise pulse train generation. Mode-locked fiber lasers working in soliton and stretched-pulse regime outperform others in terms of the laser noise characteristics, mechanical stability and easy maintenance. However, conventional optical fibers always show a normal group velocity dispersion around 1 μm, leading to the inconvenience for necessary dispersion management. Here we show that optical microfibers having a large anomalous dispersion around 1 μm can be integrated into mode-locked Yb-doped fiber lasers with ultralow insertion loss down to -0.06 dB, enabling convenient dispersion management of the laser cavity. Besides, optical microfibers could also be adopted to spectrally broaden and to dechirp the ultrashort pulses outside the laser cavity, giving rise to a pulse duration of about 110 fs. We believe that this demonstration may facilitate all-fiber format high-performance ultrashort pulse generation at 1 μm and may find applications in precision measurements, large-scale facility synchronization and evanescent-field-based optical sensing.

  4. General description and understanding of the nonlinear dynamics of mode-locked fiber lasers.

    Science.gov (United States)

    Wei, Huai; Li, Bin; Shi, Wei; Zhu, Xiushan; Norwood, Robert A; Peyghambarian, Nasser; Jian, Shuisheng

    2017-05-02

    As a type of nonlinear system with complexity, mode-locked fiber lasers are known for their complex behaviour. It is a challenging task to understand the fundamental physics behind such complex behaviour, and a unified description for the nonlinear behaviour and the systematic and quantitative analysis of the underlying mechanisms of these lasers have not been developed. Here, we present a complexity science-based theoretical framework for understanding the behaviour of mode-locked fiber lasers by going beyond reductionism. This hierarchically structured framework provides a model with variable dimensionality, resulting in a simple view that can be used to systematically describe complex states. Moreover, research into the attractors' basins reveals the origin of stochasticity, hysteresis and multistability in these systems and presents a new method for quantitative analysis of these nonlinear phenomena. These findings pave the way for dynamics analysis and system designs of mode-locked fiber lasers. We expect that this paradigm will also enable potential applications in diverse research fields related to complex nonlinear phenomena.

  5. Mode-locking and the transition to chaos in dissipative systems

    International Nuclear Information System (INIS)

    Bak, P.; Bohr, T.; Jensen, M.H.

    1984-01-01

    Dissipative systems with two competing frequencies exhibit transitions to chaos. We have investigated the transition through a study of discrete maps of the circle onto itself, and by constructing and analyzing return maps of differential equations representing some physical systems. The transition is caused by interaction and overlap of mode-locked resonances and takes place at a critical line where the map losses invertibility. At this line the mode-locked intervals trace up a complete Devil's Staircase whose complementary set is a Cantor set with universal fractal dimension D approx. 0.87. Below criticality there is room for quasiperiodic orbits, whose measure is given by an exponent β approx. 0.34 which can be related to D through a scaling relation, just as for second order phase transitions. The Lebesgue measure serves as an order parameter for the transition to chaos. The resistively shunted Josephson junction, and charge density waves (CDWs) in rf electric fields are usually described by the differential equation of the damped driven pendulum. The 2d return map for this equation collapses to ld circle map at and below the transition to chaos. The theoretical results on universal behavior, derived here and elsewhere, can thus readily be checked experimentally by studying real physical systems. Recent experiments on Josephson junctions and CDWs indicating the predicted fractal scaling of mode-locking at criticality are reviewed

  6. High-energy harmonic mode-locked 2 μm dissipative soliton fiber lasers

    International Nuclear Information System (INIS)

    Yang, Nan; Tang, Yulong; Xu, Jianqiu

    2015-01-01

    High-pulse-energy harmonic mode-locking in 2 μm Tm-doped fiber lasers (TDFLs) is realized, for the first time, by using a short piece of anomalous dispersion gain fiber and the dissipative soliton mode-locking mechanism. Appropriately designing the cavity dispersion map and adjusting the cavity gain, stable harmonic mode-locking of the dissipative soliton TDFL from the 2nd to the 4th order is achieved, with the pulsing repetition rates and pulse energy being 43.4, 65.1, 86.8 MHz, and 6.27, 4.32 and 3.29 nJ, respectively. The harmonic laser pulse has a pulse width of ∼30 ps and a center wavelength of ∼1929 nm with a spectral bandwidth of ∼3.26 nm, giving a highly chirped laser pulse. Two types of soliton molecules are also observed in this laser system. (letter)

  7. Black phosphorus saturable absorber for ultrafast mode-locked pulse laser via evanescent field interaction

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kichul; Lee, Young Tack; Choi, Won-Kook; Song, Yong-Won [Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Lee, Junsu; Lee, Ju Han [School of Electrical and Computer Engineering, University of Seoul (Korea, Republic of)

    2015-12-15

    Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most recent studies have shown that the material has an excellent optical nonlinearity useful in many areas, one of which is in saturable absorption for passive mode-locking. A direct interaction scheme for mode-locking, however, has a potential to optically cause permanent damage to the already delicate material. Evanescent field interaction scheme has already been proven to be a useful method to prevent such danger for other 2-dimensional nanomaterials. In this report, we have utilized the evanescent field interaction to demonstrate that the optical nonlinear characteristics of BP is sufficiently strong to use in such an indirect interaction method. The successful demonstration of the passive mode-locking operation has generated pulses with the pulse duration, repetition rate, and time bandwidth product of 2.18 ps, 15.59 MHz, and 0.336, respectively. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Multi-operational tuneable Q-switched mode-locking Er fibre laser

    Science.gov (United States)

    Qamar, F. Z.

    2018-01-01

    A wavelength-spacing tuneable, Q-switched mode-locking (QML) erbium-doped fibre laser based on non-linear polarization rotation controlled by four waveplates and a cube polarizer is proposed. A mode-locked pulse train using two quarter-wave plates and a half-wave plate (HWP) is obtained first, and then an extra HWP is inserted into the cavity to produce different operation regimes. The evolutions of temporal and spectral dynamics with different orientation angles of the extra HWP are investigated. A fully modulated stable QML pulse train is observed experimentally. This is, to the author’s best knowledge, the first experimental work reporting QML operation without adding an extra saturable absorber inside the laser cavity. Multi-wavelength pulse laser operation, multi-pulse train continuous-wave mode-locking operation and pulse-splitting operations are also reported at certain HWP angles. The observed operational dynamics are interpreted as a mutual interaction of dispersion, non-linear effect and insertion loss. This work provides a new mechanism for fabricating cheap tuneable multi-wavelength lasers with QML pulses.

  9. Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structure

    KAUST Repository

    Sun, Jian

    2013-06-27

    In this dissertation, the extraordinary magnetoresistance (EMR) effect in semiconductor/metal hybrid structures is studied to improve the performance in sensing applications. Using two-dimensional finite element simulations, the geometric dependence of the output sensitivity, which is a more relevant parameter for EMR sensors than the magnetoresistance (MR), is studied. The results show that the optimal geometry in this case is different from the geometry reported before, where the MR ratio was optimized. A device consisting of a semiconductor bar with length/width ratio of 5~10 and having only 2 contacts is found to exhibit the highest sensitivity. A newly developed three-dimensional finite element model is employed to investigate parameters that have been neglected with the two dimensional simulations utilized so far, i.e., thickness of metal shunt and arbitrary semiconductor/metal interface. The simulations show the influence of those parameters on the sensitivity is up to 10 %. The model also enables exploring the EMR effect in planar magnetic fields. In case of a bar device, the sensitivity to planar fields is about 15 % to 20 % of the one to perpendicular fields. 5 A “top-contacted” structure is proposed to reduce the complexity of fabrication, where neither patterning of the semiconductor nor precise alignment is required. A comparison of the new structure with a conventionally fabricated device shows that a similar magnetic field resolution of 24 nT/√Hz is obtained. A new 3-contact device is developed improving the poor low-field sensitivity observed in conventional EMR devices, resulting from its parabolic magnetoresistance response. The 3-contact device provides a considerable boost of the low field response by combining the Hall effect with the EMR effect, resulting in an increase of the output sensitivity by 5 times at 0.01 T compared to a 2-contact device. The results of this dissertation provide new insights into the optimization of EMR devices

  10. Measuring a Fiber-Optic Delay Line Using a Mode-Locked Laser

    Science.gov (United States)

    Tu, Meirong; McKee, Michael R.; Pak, Kyung S.; Yu, Nan

    2010-01-01

    The figure schematically depicts a laboratory setup for determining the optical length of a fiber-optic delay line at a precision greater than that obtainable by use of optical time-domain reflectometry or of mechanical measurement of length during the delay-line-winding process. In this setup, the delay line becomes part of the resonant optical cavity that governs the frequency of oscillation of a mode-locked laser. The length can then be determined from frequency-domain measurements, as described below. The laboratory setup is basically an all-fiber ring laser in which the delay line constitutes part of the ring. Another part of the ring - the laser gain medium - is an erbium-doped fiber amplifier pumped by a diode laser at a wavelength of 980 nm. The loop also includes an optical isolator, two polarization controllers, and a polarizing beam splitter. The optical isolator enforces unidirectional lasing. The polarization beam splitter allows light in only one polarization mode to pass through the ring; light in the orthogonal polarization mode is rejected from the ring and utilized as a diagnostic output, which is fed to an optical spectrum analyzer and a photodetector. The photodetector output is fed to a radio-frequency spectrum analyzer and an oscilloscope. The fiber ring laser can generate continuous-wave radiation in non-mode-locked operation or ultrashort optical pulses in mode-locked operation. The mode-locked operation exhibited by this ring is said to be passive in the sense that no electro-optical modulator or other active optical component is used to achieve it. Passive mode locking is achieved by exploiting optical nonlinearity of passive components in such a manner as to obtain ultra-short optical pulses. In this setup, the particular nonlinear optical property exploited to achieve passive mode locking is nonlinear polarization rotation. This or any ring laser can support oscillation in multiple modes as long as sufficient gain is present to overcome

  11. Scaling Fiber Lasers to Large Mode Area: An Investigation of Passive Mode-Locking Using a Multi-Mode Fiber.

    Science.gov (United States)

    Ding, Edwin; Lefrancois, Simon; Kutz, Jose Nathan; Wise, Frank W

    2011-01-01

    The mode-locking of dissipative soliton fiber lasers using large mode area fiber supporting multiple transverse modes is studied experimentally and theoretically. The averaged mode-locking dynamics in a multi-mode fiber are studied using a distributed model. The co-propagation of multiple transverse modes is governed by a system of coupled Ginzburg-Landau equations. Simulations show that stable and robust mode-locked pulses can be produced. However, the mode-locking can be destabilized by excessive higher-order mode content. Experiments using large core step-index fiber, photonic crystal fiber, and chirally-coupled core fiber show that mode-locking can be significantly disturbed in the presence of higher-order modes, resulting in lower maximum single-pulse energies. In practice, spatial mode content must be carefully controlled to achieve full pulse energy scaling. This paper demonstrates that mode-locking performance is very sensitive to the presence of multiple waveguide modes when compared to systems such as amplifiers and continuous-wave lasers.

  12. Integrated Microwave Photonic Isolators: Theory, Experimental Realization and Application in a Unidirectional Ring Mode-Locked Laser Diode

    Directory of Open Access Journals (Sweden)

    Martijn J.R. Heck

    2015-09-01

    Full Text Available A novel integrated microwave photonic isolator is presented. It is based on the timed drive of a pair of optical modulators, which transmit a pulsed or oscillating optical signal with low loss, when driven in phase. A signal in the reverse propagation direction will find the modulators out of phase and, hence, will experience high loss. Optical and microwave isolation ratios were simulated to be in the range up to 10 dB and 20 dB, respectively, using parameters representative for the indium phosphide platform. The experimental realization of this device in the hybrid silicon platform showed microwave isolation in the 9 dB–22 dB range. Furthermore, we present a design study on the use of these isolators inside a ring mode-locked laser cavity. Simulations show that unidirectional operation can be achieved, with a 30–50-dB suppression of the counter propagating mode, at limited driving voltages. The potentially low noise and feedback-insensitive operation of such a laser makes it a very promising candidate for use as on-chip microwave or comb generators.

  13. Hybrid confocal Raman fluorescence microscopy on single cells using semiconductor quantum dots

    NARCIS (Netherlands)

    van Manen, H.J.; Otto, Cornelis

    2007-01-01

    We have overcome the traditional incompatibility of Raman microscopy with fluorescence microscopy by exploiting the optical properties of semiconductor fluorescent quantum dots (QDs). Here we present a hybrid Raman fluorescence spectral imaging approach for single-cell microscopy applications. We

  14. Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

    Science.gov (United States)

    Vela Becerra, Javier; Ruberu, T. Purnima A.

    2017-12-05

    A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

  15. Evanescent-wave coupled right angled buried waveguide: Applications in carbon nanotube mode-locking

    International Nuclear Information System (INIS)

    Mary, R.; Thomson, R. R.; Kar, A. K.; Brown, G.; Beecher, S. J.; Popa, D.; Sun, Z.; Torrisi, F.; Hasan, T.; Milana, S.; Bonaccorso, F.; Ferrari, A. C.

    2013-01-01

    We present an evanescent-field device based on a right-angled waveguide. This consists of orthogonal waveguides, with their points of intersection lying along an angled facet of the chip. Light guided along one waveguide is incident at the angled dielectric-air facet at an angle exceeding the critical angle, so that the totally internally reflected light is coupled into the second waveguide. By depositing a nanotube film on the angled surface, the chip is then used to mode-lock an Erbium doped fiber ring laser with a repetition rate of 26 MHz, and pulse duration of 800 fs

  16. Dispersive-cavity actively mode-locked fiber laser for stable radio frequency delivery

    International Nuclear Information System (INIS)

    Dai, Yitang; Wang, Ruixin; Yin, Feifei; Xu, Kun; Li, Jianqiang; Lin, Jintong

    2013-01-01

    We report a novel technique for highly stable transfer of a radio frequency (RF) comb over long optical fiber link, which is highly dispersive and is a part of an actively mode-locked fiber laser. Phase fluctuation along the fiber link, which is mainly induced by physical vibration and temperature fluctuations, is automatically compensated by the self-adapted wavelength shifting. Without phase-locking loop or any tunable parts, stable radio frequency is transferred over a 2-km fiber link, with a time jitter suppression ratio larger than 110. (letter)

  17. Active-passively mode-locked dye laser for diagnosis of laser-produced plasmas

    International Nuclear Information System (INIS)

    Teng, Y.L.; Fedosejevs, R.; Sigel, R.

    1981-03-01

    In this report an active-passively mode-locked, flashlamp-pumped dye laser for diagnosis of laser-produced plasmas is described. This dye laser system used as a pulsed light source for high-speed photography of laser-target experiments was synchronized to the ASTERIX III iodine laser pulse with better than 100 ps accuracy. The single pulse energy was 10 μJ, pulse duration less than 10 ps. In 111 shots clear shadowgrams were obtained during a total of 151 target shots, i.e. the system worked well in 74% of the shots. (orig.)

  18. Mode-locked Pr3+-doped silica fiber laser with an external cavity

    DEFF Research Database (Denmark)

    Shi, Yuan; Poulsen, Christian; Sejka, Milan

    1994-01-01

    We present a Pr3+-doped silica-based fiber laser mode-locked by using a linear external cavity with a vibrating mirror. Stable laser pulses with a FWHM of less than 44 ps, peak power greater than 9 W, and repetition rate up to 100 MHz are obtained. The pulse width versus cavity mismatch ΔL and pump...... power have been investigated. With a short piece of nonlinear fiber included in the external cavity, laser pulses of 45 ps have been measured...

  19. Polariton condensation, superradiance and difference combination parametric resonance in mode-locked laser

    Science.gov (United States)

    Bagayev, S. N.; Arkhipov, R. M.; Arkhipov, M. V.; Egorov, V. S.; Chekhonin, I. A.; Chekhonin, M. A.

    2017-11-01

    The generation of the ring mode-locked laser containing resonant absorption medium in the cavity was investigated. It is shown that near the strong resonant absorption lines a condensation of polaritons arises. Intensive radiation looks like as superradiance in a medium without population inversion. We studied theoretically the microscopic mechanism of these phenomena. It was shown that in this system in absorbing medium a strong self-induced difference combination parametric resonance exists. Superradiance on polaritonic modes in the absorbing medium are due to the emergence of light-induced resonant polarization as a result of fast periodic nonadiabatic quantum jumps in the absorber.

  20. Stability of the mode-locking regime in tapered quantum-dot lasers

    Science.gov (United States)

    Bardella, P.; Drzewietzki, L.; Rossetti, M.; Weber, C.; Breuer, S.

    2018-02-01

    We study numerically and experimentally the role of the injection current and reverse bias voltage on the pulse stability of tapered, passively mode-locked, Quantum Dot (QD) lasers. By using a multi-section delayed differential equation and introducing in the model the QD inhomogenous broadening, we are able to predict the onset of leading and trailing edge instabilities in the emitted pulse trains and to identify specific trends of stability in dependence on the laser biasing conditions. The numerical results are confirmed experimentally trough amplitude and timing stability analysis of the pulses.

  1. Mode locking of electron spin coherences in singly charged quantum dots.

    Science.gov (United States)

    Greilich, A; Yakovlev, D R; Shabaev, A; Efros, Al L; Yugova, I A; Oulton, R; Stavarache, V; Reuter, D; Wieck, A; Bayer, M

    2006-07-21

    The fast dephasing of electron spins in an ensemble of quantum dots is detrimental for applications in quantum information processing. We show here that dephasing can be overcome by using a periodic train of light pulses to synchronize the phases of the precessing spins, and we demonstrate this effect in an ensemble of singly charged (In,Ga)As/GaAs quantum dots. This mode locking leads to constructive interference of contributions to Faraday rotation and presents potential applications based on robust quantum coherence within an ensemble of dots.

  2. Towards attosecond synchronization of remote mode-locked lasers using stabilized transmission of optical comb frequencies

    Science.gov (United States)

    Wilcox, R. B.; Byrd, J. M.; Doolittle, L. R.; Holzwarth, R.; Huang, G.

    2011-09-01

    We propose a method of synchronizing mode-locked lasers separated by hundreds of meters with the possibility of achieving sub-fs performance by locking the phases of corresponding lines in the optical comb spectrum. The optical phase from one comb line is transmitted to the remote laser over an interferometrically stabilized link by locking a single frequency laser to a comb line with high phase stability. We describe how these elements are integrated into a complete system and estimate the potential performance.

  3. Picosecond trigger system useful in mode-locked laser pulse measurements

    International Nuclear Information System (INIS)

    Cunin, B.; Miehe, J.A.; Sipp, B.; Thebault, J.

    1976-01-01

    A highly sensitive tunnel diode trigger useful in temporal intensity build-up measurements of mode-locked lasers has been developed; the device reduces notably the time walk due to the lack of repeatability in intensity of the laser output. The performance of the trigger have been established by means of a GHz wideband-0.1V/cm sensitive real-time oscilloscope and of an image converter camera having a picosecond resolution: the experimental results show that a variation of the amplitude of the laser pulse train of a factor 5 leads to a time jitter of less than 30 ps (Auth.)

  4. Wavelength and pulse duration tunable ultrafast fiber laser mode-locked with carbon nanotubes

    OpenAIRE

    Li, Diao; Jussila, Henri; Wang, Yadong; Hu, Guohua; Albrow-Owen, Tom; C. T. Howe, Richard; Ren, Zhaoyu; Bai, Jintao; Hasan, Tawfique; Sun, Zhipei

    2018-01-01

    Ultrafast lasers with tunable parameters in wavelength and time domains are the choice of light source for various applications such as spectroscopy and communication. Here, we report a wavelength and pulse-duration tunable mode-locked Erbium doped fiber laser with single wall carbon nanotube-based saturable absorber. An intra-cavity tunable filter is employed to continuously tune the output wavelength for 34 nm (from 1525 nm to 1559 nm) and pulse duration from 545 fs to 6.1 ps, respectively....

  5. Terahertz repetition frequencies from harmonic mode-locked monolithic compound-cavity laser diodes

    International Nuclear Information System (INIS)

    Yanson, D. A.; Street, M. W.; McDougall, S. D.; Thayne, I. G.; Marsh, J. H.; Avrutin, E. A.

    2001-01-01

    Compound-cavity laser diodes are mode locked at a harmonic of the fundamental round-trip frequency to achieve repetition rates of up to 2.1 THz. The devices are fabricated from GaAs/AlGaAs material at a wavelength of 860 nm and incorporate two gain sections with an etched slot reflector between them, and a saturable absorber section. Autocorrelation studies are used to investigate device behavior for different reflector types and reflectivity. These lasers may find applications in terahertz imaging, medicine, ultrafast optical links, and atmospheric sensing. [copyright] 2001 American Institute of Physics

  6. An innovative interpretation of rotating tearing mode locking to an external static current

    International Nuclear Information System (INIS)

    Coelho, R.; Lazzaro, E.

    2001-01-01

    Naturally occurring error fields in tokamaks, which arise from misalignments of the external field coils, may trigger the onset of tearing modes. The conditions under which a static error field is able to lock a rotating tearing mode and how this process takes place are discussed. The analysis presented contributes to a new understanding and interpretation of mode locking, given in terms of the superposition of a slipping layer (a radial layer of very fast mode phase variations) and the tearing layer, where reconnection takes place. In addition, a stabilizing operating window is found to exist, independent of the phase time evolution of the mode. (author). Letter-to-the-editor

  7. Tunable radio-frequency photonic filter based on an actively mode-locked fiber laser.

    Science.gov (United States)

    Ortigosa-Blanch, A; Mora, J; Capmany, J; Ortega, B; Pastor, D

    2006-03-15

    We propose the use of an actively mode-locked fiber laser as a multitap optical source for a microwave photonic filter. The fiber laser provides multiple optical taps with an optical frequency separation equal to the external driving radio-frequency signal of the laser that governs its repetition rate. All the optical taps show equal polarization and an overall Gaussian apodization, which reduces the sidelobes. We demonstrate continuous tunability of the filter by changing the external driving radio-frequency signal of the laser, which shows good fine tunability in the operating range of the laser from 5 to 10 GHz.

  8. Spectral dynamics of square pulses in passively mode-locked fiber lasers

    Science.gov (United States)

    Semaan, Georges; Komarov, Andrey; Niang, Alioune; Salhi, Mohamed; Sanchez, François

    2018-02-01

    We investigate experimentally and numerically the spectral dynamics of square pulses generated in passively mode-locked fiber lasers under the dissipative soliton resonance. The features of the transition from the single-peak spectral profile to the doublet spectrum with increasing pump power are studied. The used master equation takes into account the gain saturation, the quadratic frequency dispersion of the gain and the refractive index, and the cubic-quintic nonlinearity of the losses and refractive index. Experimental data are obtained for an Er:Yb-doped fiber ring laser. The theoretical and experimental results are in good agreement with each other.

  9. Wannier-Frenkel hybrid exciton in organic-semiconductor quantum dot heterostructures

    International Nuclear Information System (INIS)

    Birman, Joseph L.; Huong, Nguyen Que

    2007-01-01

    The formation of a hybridization state of Wannier Mott exciton and Frenkel exciton in different hetero-structure configurations involving quantum dots is investigated. The hybrid excitons exist at the interfaces of the semiconductors quantum dots and the organic medium, having unique properties and a large optical non-linearity. The coupling at resonance is very strong and tunable by changing the parameters of the systems (dot radius, dot-dot distance, generation of the organic dendrites and the materials of the system etc...). Different semiconductor quantum dot-organic material combination systems have been considered such as a semiconductor quantum dot lattice embedded in an organic host, a semiconductor quantum dot at the center of an organic dendrite, a semiconductor quantum dot coated by an organic shell

  10. Multiple-Pulse Operation and Bound States of Solitons in Passive Mode-Locked Fiber Lasers

    Directory of Open Access Journals (Sweden)

    A. Komarov

    2012-01-01

    Full Text Available We present results of our research on a multiple-pulse operation of passive mode-locked fiber lasers. The research has been performed on basis of numerical simulation. Multihysteresis dependence of both an intracavity energy and peak intensities of intracavity ultrashort pulses on pump power is found. It is shown that the change of a number of ultrashort pulses in a laser cavity can be realized by hard as well as soft regimes of an excitation and an annihilation of new solitons. Bound steady states of interacting solitons are studied for various mechanisms of nonlinear losses shaping ultrashort pulses. Possibility of coding of information on basis of soliton trains with various bonds between neighboring pulses is discussed. The role of dispersive wave emitted by solitons because of lumped intracavity elements in a formation of powerful soliton wings is analyzed. It is found that such powerful wings result in large bounding energies of interacting solitons in steady states. Various problems of a soliton interaction in passive mode-locked fiber lasers are discussed.

  11. Electronic control of different generation regimes in mode-locked all-fibre F8 laser

    Science.gov (United States)

    Kobtsev, Sergey; Ivanenko, Aleksey; Kokhanovskiy, Alexey; Smirnov, Sergey

    2018-04-01

    We demonstrate for the first time an electronically controlled realisation of markedly different generation regimes in a mode-locked all-fibre figure-eight (F8) Yb-doped laser. Electronic adjustment of the ratio of pumping powers of two amplification stages in a nonlinear amplifying loop mirror enables the establishment of stable pulse generation regimes with different degrees of coherence and control over their parameters within relatively broad limits, with the pulse duration range exceeding a factor of two in the picosecond domain for coherent and incoherent pulses, the energy range exceeding an order of magnitude for incoherent pulses (2.2-24.8 nJ) and over a factor of 8 for coherent pulses (1.9-16.2 nJ). Adjustment of the pumping powers allows one to maintain the duration of the coherent pulses and to set their peak power in the range of 32.5-292.5 W. The proposed configuration of electronic control over the radiation parameters of a mode-locked all-fibre F8 laser enables reproducible generation of pulses of different types with specified parameters within a broad range of values.

  12. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers

    DEFF Research Database (Denmark)

    Klaime, K.; Piron, R.; Grillot, F.

    2013-01-01

    This paper aims to investigate the effects of the temperature on the mode-locking capability of two section InAs/InP quantum nanostructure (QN) passively mode locked lasers. Devices are made with multi-layers of self-assembled InAs QN either grown on InP(100) (5 quantum dashes (QDashes) layers......) or on InP (311)B (6 quantum dots (QDs) layers). Using an analytical model, the mode-locking stability map is extracted for the two types of QN as a function of optical absorption, cavity length, current density and temperature. We believe that this study is of first importance since it reports...... for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed through a proper analysis of the mode-locking stability maps. Experimental results also show...

  13. Self-mode-locking operation of a diode-end-pumped Tm:YAP laser with watt-level output power

    Science.gov (United States)

    Zhang, Su; Zhang, Xinlu; Huang, Jinjer; Wang, Tianhan; Dai, Junfeng; Dong, Guangzong

    2018-03-01

    We report on a high power continuous wave (CW) self-mode-locked Tm:YAP laser pumped by a 792 nm laser diode. Without any additional mode-locking elements in the cavity, stable and self-starting mode-locking operation has been realized. The threshold pump power of the CW self-mode-locked Tm:YAP laser is only 5.4 W. The maximum average output power is as high as 1.65 W at the pump power of 12 W, with the repetition frequency of 468 MHz and the center wavelength of 1943 nm. To the best of our knowledge, this is the first CW self-mode-locked Tm:YAP laser. The experiment results show that the Tm:YAP crystal is a promising gain medium for realizing the high power self-mode-locking operation at 2 µm.

  14. Experimental demonstration of an Er-doped fiber ring laser mode-locked with a Tm–Ho co-doped fiber saturable absorber

    International Nuclear Information System (INIS)

    Tao, Mengmeng; Wu, Junjie; Wu, Yong; Yang, Pengling; Ye, Xisheng; Peng, Junsong

    2013-01-01

    Mode-locking operation of an Er-doped fiber laser with a Tm–Ho co-doped fiber saturable absorber is demonstrated for the first time. Q-switching, Q-switched mode-locking and CW mode-locking operation modes are observed sequentially with increase of the pump power. In the mode-locking operation mode, a repetition rate at the fundamental cavity frequency of 9.05 MHz is obtained with a pulse duration of 46.3 ns. By rotating the polarization controller, a repetition rate up to 887 MHz is achieved, and the pulse duration is shortened to 0.548 ns. (paper)

  15. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  16. Detection of secondary electrons with pixelated hybrid semiconductor detectors

    International Nuclear Information System (INIS)

    Gebert, Ulrike Sonja

    2011-01-01

    Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10 -5 mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm 2 area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm 2 . To achieve this, a new photocathode was mounted in a shorter distance to the detector. The measurements where

  17. Nonlinear High-Energy Pulse Propagation in Graded-Index Multimode Optical Fibers for Mode-Locked Fiber Lasers

    Science.gov (United States)

    2014-12-23

    power kW at nm in a C-GIMF segment in the lowest order mode ; this pulse can be ob- tained from a typical titanium –sapphire mode-locked laser . A much...single- andmulticore double- clad and PCF lasers . He was a Senior Research Scientist at Corning Inc. from 2005 to 2008. He is currently an Assistant...High-Energy Pulse Propagation in Graded-Index Multimode Optical Fibers for Mode-Locked Fiber Lasers 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-12-1

  18. High-power femtosecond pulse generation in a passively mode-locked Nd:SrLaAlO4 laser

    Science.gov (United States)

    Liu, Shan-De; Dong, Lu-Lu; Zheng, Li-He; Berkowski, Marek; Su, Liang-Bi; Ren, Ting-Qi; Peng, Yan-Dong; Hou, Jia; Zhang, Bai-Tao; He, Jing-Liang

    2016-07-01

    A high optical quality Nd:SrLaAlO4 (Nd:SLA) crystal was grown using the Czochralski method and showed broad fluorescence spectrum with a full width at half maximum value of 34 nm, which is beneficial for generating femtosecond laser pulses. A stable diode-pumped passively mode-locked femtosecond Nd:SLA laser with 458 fs pulse duration was achieved for the first time at a central wavelength of 1077.9 nm. The average output power of the continuous-wave mode-locked laser was 520 mW and the repetition rate was 78.5 MHz.

  19. 1.34 µm picosecond self-mode-locked Nd:GdVO4 watt-level laser

    Science.gov (United States)

    Han, Ming; Peng, Jiying; Li, Zuohan; Cao, Qiuyuan; Yuan, Ruixia

    2017-01-01

    With a simple linear configuration, a diode-pumped, self-mode-locked Nd:GdVO4 laser at 1.34 µm is experimentally demonstrated for the first time. Based on the aberrationless theory of self-focusing and thermal lensing effect, through designing and optimizing the resonator, a pulse width as short as 9.1 ps is generated at a repetition rate of 2.0 GHz and the average output power is 2.51 W. The optical conversion efficiency and the slope efficiency for the stable mode-locked operation are approximately 16.7% and 19.2%, respectively.

  20. Effect of the doped fibre length on soliton pulses of a bidirectional mode-locked fibre laser

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, H; Alwi Kutty, N A; Zulkifli, M Z; Harun, S W [Photonics Research Center (Department of Physics), University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-08-31

    A passively bidirectional mode-locked fibre laser is demonstrated using a highly concentrated erbium-doped fibre (EDF) as a gain medium. To accomplish mode-locked operation in a short cavity, use is made of carbon nanotubes (CNTs) as a saturable absorber. Soliton pulses are obtained at a wavelength of 1560 nm with a repetition rate ranging from 43.92 MHz to 46.97 MHz and pulse width stretching from 0.56 ps to 0.41 ps as the EDF length is reduced from 60 cm to 30 cm. (lasers)

  1. Harmonic mode-locking and sub-round-trip time nonlinear dynamics of electro-optically controlled solid state laser

    Science.gov (United States)

    Gorbunkov, M. V.; Maslova, Yu Ya; Petukhov, V. A.; Semenov, M. A.; Shabalin, Yu V.; Tunkin, V. G.

    2018-03-01

    Harmonic mode-locking in a solid state laser due to optoelectronic control is studied numerically on the basis of two methods. The first one is detailed numeric simulation taking into account laser radiation fine time structure. It is shown that optimally chosen feedback delay leads to self-started mode-locking with generation of desired number of pulses in the laser cavity. The second method is based on discrete maps for short laser pulse energy. Both methods show that the application of combination of positive and negative feedback loops allows to reduce the period of regular nonlinear dynamics down to a fraction of a laser cavity round trip time.

  2. A modeling method of semiconductor fabrication flows with extended knowledge hybrid Petri nets

    Institute of Scientific and Technical Information of China (English)

    Zhou Binghai; Jiang Shuyu; Wang Shijin; Wu bin

    2008-01-01

    A modeling method of extended knowledge hybrid Petri nets (EKHPNs), incorporating object-oriented methods into hybrid Petri nets (HPNs), was presented and used for the representation and modeling of semiconductor wafer fabrication flows. To model the discrete and continuous parts of a complex semiconductor wafer fabrication flow, the HPNs were introduced into the EKHPNs. Object-oriented methods were combined into the EKHPNs for coping with the complexity of the fabrication flow. Knowledge annotations were introduced to solve input and output conflicts of the EKHPNs.Finally, to demonstrate the validity of the EKHPN method, a real semiconductor wafer fabrication case was used to illustrate the modeling procedure. The modeling results indicate that the proposed method can be used to model a complex semiconductor wafer fabrication flow expediently.

  3. Report on first masing and single mode locking in a prebunched beam FEM oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, M.; Eichenbaum, A.; Kleinman, H. [Tel-Aviv Univ., Ramat-Aviv (Israel)] [and others

    1995-12-31

    Radiation characteristics of a table-top free electron maser (FEM) are described in this paper. The FEM employs a prebunched electron beam and is operated as an oscillator in the low-gain collective (Raman) regime. Using electron beam prebunching single mode locking at any one of the possible oscillation modes was obtained. The electron beam is prebunched by a microwave tube section before it is injected into the wiggler. By tuning the electron beam bunching frequency, the FEM oscillation frequency can be locked to any eigen frequency of the resonant waveguide cavity which is within the frequency band of net gain of the FEM. The oscillation build up process is sped up, when the FEM operates with a prebunched electron beam, and the build-up time of radiation is shortened significantly. First measurements of masing with and without prebunching and characterization of the emitted radiation are reported.

  4. Mode locking and quasiperiodicity in a discrete-time Chialvo neuron model

    Science.gov (United States)

    Wang, Fengjuan; Cao, Hongjun

    2018-03-01

    The two-dimensional parameter spaces of a discrete-time Chialvo neuron model are investigated. Our studies demonstrate that for all our choice of two parameters (i) the fixed point is destabilized via Neimark-Sacker bifurcation; (ii) there exist mode locking structures like Arnold tongues and shrimps, with periods organized in a Farey tree sequence, embedded in quasiperiodic/chaotic region. We determine analytically the location of the parameter sets where Neimark-Sacker bifurcation occurs, and the location on this curve where Arnold tongues of arbitrary period are born. Properties of the transition that follows the so-called two-torus from quasiperiodicity to chaos are presented clearly and proved strictly by using numerical simulations such as bifurcation diagrams, the largest Lyapunov exponent diagram on MATLAB and C++.

  5. Cascade mode locking: a possible route to chaos in the two-waves hamiltonian system

    International Nuclear Information System (INIS)

    Gell, Y.; Nakach, R.

    1989-06-01

    We present a numerical study of the two-waves Hamiltonian system which reveals the route to large scale stochasticity as a process based on the mode-locking phenomenon. The final chaos is reached after a cascade of lockings, appearing successively for different independent modes of oscillation in the system. Using a Fourier analysis, the different steps in this cascade process are detected by following the change in the frequency of the pronounced modes in the power spectrum; when changing the strength of the pertubation, one observes the locking of the relevant mode to a fixed frequency inherent to the system. It is shown that this mechanism allows for the generation of low frequency oscillations which, due to the nonlinear coupling existing in the system, combine with all the existing peaks into a raised spectrum consisting of broad diffuse patterns, which is the signature of chaotic motion

  6. Mechanism of multisoliton formation and soliton energy quantization in passively mode-locked fiber lasers

    International Nuclear Information System (INIS)

    Tang, D.Y.; Zhao, L.M.; Zhao, B.; Liu, A.Q.

    2005-01-01

    We report results of numerical simulations on multiple-soliton generation and soliton energy quantization in a soliton fiber ring laser passively mode locked by using the nonlinear polarization rotation technique. We found numerically that the formation of multiple solitons in the laser is caused by a peak-power-limiting effect of the laser cavity. It is also the same effect that suppresses the soliton pulse collapse, an intrinsic feature of solitons propagating in gain media, and makes the solitons stable in the laser. Furthermore, we show that the soliton energy quantization observed in the lasers is a natural consequence of the gain competition between the multiple solitons. Enlightened by the numerical result we speculate that multisoliton formation and soliton energy quantization observed in other types of soliton fiber lasers could have a similar mechanism

  7. Soliton formation and evolution in passively-mode-locked lasers with ultralong anomalous-dispersion fibers

    International Nuclear Information System (INIS)

    Liu Xueming

    2011-01-01

    The soliton formation and evolution are numerically and experimentally investigated in passively-mode-locked lasers where pulses encounter ultralong anomalous-dispersion fibers. The pulse formation and evolution in lasers are determined by two balances, namely, nonlinearity and anomalous-dispersion balance and intracavity filtering and self-amplitude modulation balance. It is numerically found that a higher-energy soliton can be split into identical lower-energy multisolitons with exactly the same physical properties. Simulation results show that the separation of neighboring solitons is variational in the temporal domain. The temporal and spectral characteristics of solitons have large variations throughout the laser cavity, qualitatively distinct from the steady state of conventional solitons. The experimental observations confirm the theoretical predictions.

  8. Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

    Science.gov (United States)

    Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

    2018-04-01

    The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

  9. Hybrid organic semiconductor lasers for bio-molecular sensing.

    Science.gov (United States)

    Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

    2014-01-01

    Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

  10. Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning

    Science.gov (United States)

    Schlesinger, R.; Bianchi, F.; Blumstengel, S.; Christodoulou, C.; Ovsyannikov, R.; Kobin, B.; Moudgil, K.; Barlow, S.; Hecht, S.; Marder, S.R.; Henneberger, F.; Koch, N.

    2015-01-01

    The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach. PMID:25872919

  11. Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning.

    Science.gov (United States)

    Schlesinger, R; Bianchi, F; Blumstengel, S; Christodoulou, C; Ovsyannikov, R; Kobin, B; Moudgil, K; Barlow, S; Hecht, S; Marder, S R; Henneberger, F; Koch, N

    2015-04-15

    The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach.

  12. Tm-doped fiber laser mode-locking with MoS2-polyvinyl alcohol saturable absorber

    Science.gov (United States)

    Cao, Liming; Li, Xing; Zhang, Rui; Wu, Duanduan; Dai, Shixun; Peng, Jian; Weng, Jian; Nie, Qiuhua

    2018-03-01

    We have designed an all-fiber passive mode-locking thulium-doped fiber laser that uses molybdenum disulfide (MoS2) as a saturable absorber (SA) material. A free-standing few-layer MoS2-polyvinyl alcohol (PVA) film is fabricated by liquid phase exfoliation (LPE) and is then transferred onto the end face of a fiber connector. The excellent saturable absorption of the fabricated MoS2-based SA allows the laser to output soliton pulses at a pump power of 500 mW. Fundamental frequency mode-locking is realized at a repetition frequency of 13.9 MHz. The central wavelength is 1926 nm, the 3 dB spectral bandwidth is 2.86 nm and the pulse duration is 1.51 ps. Additionally, third-order harmonic mode-locking of the laser is also achieved. The pulse duration is 1.33 ps, which is slightly narrower than the fundamental frequency mode-locking bandwidth. The experimental results demonstrate that the few-layer MoS2-PVA SA is promising for use in 2 μm laser systems.

  13. 5-GHz passively mode-locked quantum dot ring laser diode at 1.5 μm

    NARCIS (Netherlands)

    Heck, M.J.R.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Eikema, K.S.E.; Ubachs, W.; Anantathanasarn, S.; Nötzel, R.

    2008-01-01

    In this paper we present the first observation of passive mode-locking in a quantum dot (QD) ring laser operating at wavelengths around 1.5 µm. The device consists of an 18-mm long (electrically pumped) ring cavity, corresponding to a 5-GHz roundtrip frequency. The waveguide width is 2 µm. A

  14. All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber

    Science.gov (United States)

    Zhang, Yue; Zhu, Jianqi; Li, Pingxue; Wang, Xiaoxiao; Yu, Hua; Xiao, Kun; Li, Chunyong; Zhang, Guangyu

    2018-04-01

    We report on an all-fiber passively mode-locked ytterbium-doped (Yb-doped) fiber laser with monolayer molybdenum disulfide (ML-MoS2) saturable absorber (SA) by three-temperature zone chemical vapor deposition (CVD) method. The modulation depth, saturation fluence, and non-saturable loss of this ML-MoS2 are measured to be 3.6%, 204.8 μJ/cm2 and 6.3%, respectively. Based on this ML-MoS2SA, a passively mode-locked Yb-doped fiber laser has been achieved at 979 nm with pulse duration of 13 ps and repetition rate of 16.51 MHz. A mode-locked fiber laser at 1037 nm is also realized with a pulse duration of 475 ps and repetition rate of 26.5 MHz. To the best of our knowledge, this is the first report that the ML-MoS2 SA is used in an all-fiber Yb-doped mode-locked fiber laser at 980 nm. Our work further points the excellent saturable absorption ability of ML-MoS2 in ultrafast photonic applications.

  15. Dual wavelength Mode-Locking of InAs/InP quantum dot laser diodes at 1.5µm

    NARCIS (Netherlands)

    Tahvili, M.S.; Heck, M.J.R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

    2011-01-01

    We report on stable dual-wavelength mode-locking of 3.1GHz and 10GHz two-section InAs/InP(100) quantum dot laser diodes. Evaluation of relative time delay between different spectral components indicates opposite sign of chirp over the two spectral lobes

  16. Pulse-forming and line-broadening in AM mode locking of the TEA-CO2laser

    NARCIS (Netherlands)

    Witteman, W.J.; Olbertz, A.H.M.

    1977-01-01

    The present paper describes AM mode locking for homogeneously broadened systems, a procedure for measuring linewidths under laser conditions, and finally, experimental results for a 1-atm CO2laser. Working in the frequency domain, analytic solutions are given for the pulse bandwidth and pulse shape

  17. Mode-locked ytterbium fiber lasers using a large modulation depth carbon nanotube saturable absorber without an additional spectral filter

    International Nuclear Information System (INIS)

    Pan, Y Z; Miao, J G; Liu, W J; Huang, X J; Wang, Y B

    2014-01-01

    We demonstrate an all-normal-dispersion ytterbium (Yb)-doped fiber laser mode-locked by a higher modulation depth carbon nanotube saturable absorber (CNT-SA) based on an evanescent field interaction scheme. The laser cavity consists of pure normal dispersion fibers without dispersion compensation and an additional spectral filter. It is exhibited that the higher modulation depth CNT-SA could contribute to stabilize the mode-locking operation within a limited range of pump power and generate the highly chirped pulses with a high-energy level in the cavity with large normal dispersion and strong nonlinearity. Stable mode-locked pulses with a maximal energy of 29 nJ with a 5.59 MHz repetition rate at the operating wavelength around 1085 nm have been obtained. The maximal time-bandwidth product is 262.4. The temporal and spectral characteristics of pulses versus pump power are demonstrated. The experimental results suggest that the CNT-SA provides a sufficient nonlinear loss to compensate high nonlinearity and catch up the gain at a different pump power and thus leads to the stable mode locking. (letter)

  18. High-speed polarization-sensitive OCT at 1060 nm using a Fourier domain mode-locked swept source

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Torzicky, Teresa; Klein, Thomas

    2012-01-01

    sufficiently large datasets. Here, we demonstrate PS-OCT imaging at 350 kHz A-scan rate using a two-channel PS-OCT system in conjunction with a Fourier domain mode-locked laser. The light source spectrum spans up to 100nm around the water absorption minimum at 1060 nm. By modulating the laser pump current, we...

  19. Laser-diode pumped self-mode-locked praseodymium visible lasers with multi-gigahertz repetition rate.

    Science.gov (United States)

    Zhang, Yuxia; Yu, Haohai; Zhang, Huaijin; Di Lieto, Alberto; Tonelli, Mauro; Wang, Jiyang

    2016-06-15

    We demonstrate efficient laser-diode pumped multi-gigahertz (GHz) self-mode-locked praseodymium (Pr3+) visible lasers with broadband spectra from green to deep red for the first time to our knowledge. With a Pr3+-doped GdLiF4 crystal, stable self-mode-locked visible pulsed lasers at the wavelengths of 522 nm, 607 nm, 639 nm, and 720 nm have been obtained with the repetition rates of 2.8 GHz, 3.1 GHz, 3.1 GHz, and 3.0 GHz, respectively. The maximum output power was 612 mW with the slope efficiency of 46.9% at 639 nm. The mode-locking mechanism was theoretically analyzed. The stable second-harmonic mode-locking with doubled repetition frequency was also realized based on the Fabry-Perot effect formed in the laser cavity. In addition, we find that the polarization directions were turned with lasing wavelengths. This work may provide a new way for generating efficient ultrafast pulses with high- and changeable-repetition rates in the visible range.

  20. Passive mode-locking dynamics in a 3.1GHz quantum dot laser diode operating around 1.5μm

    NARCIS (Netherlands)

    Tahvili, M.S.; Heck, M.J.R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

    2010-01-01

    We report on passive mode-locking in a 3.1GHz InAs/InP(100) quantum dot laser diode operating around 1.5µm. The range of stable passive mode-locking, detailed measurements of the linewidth of the optical modes and the phase modulation in output pulses are presented.

  1. Simultaneous Q-switching and mode-locking in an intracavity frequency doubled diode-pumped Nd:YVO4 / KTP green laser with Cr4+:YAG

    International Nuclear Information System (INIS)

    Mukhopadhyay, P. K.; Ranganathan, K.; George, J.; Nathan, T. P. S.; Alsous, M. B.

    2007-01-01

    We report intracavity second harmonic (at 532 nm) generation in passively Q-switched mode-locked Nd: YVO4 laser. The width of a typical Q-switched envelope of the mode locked pulses for the green laser was around 65 ± 5 ns and the repetition rate for the mode locked pulses was 400 MHz. The intracavity frequency doubling significantly improves the depth of modulation of the mode locked pulses. The peak power of a single mode locked green pulse near the center of the Q-switched envelope was estimated to be more than 2kw and the average green power was 6 times higher than the CW green power at an incident diode pump power of 6W. (author)

  2. Extraordinary Hall effect in Co implanted GaAs hybrid magnetic semiconductors

    International Nuclear Information System (INIS)

    Honda, S.; Tateishi, K.; Nawate, M.; Sakamoto, I.

    2004-01-01

    Hybrid Co/GaAs ferromagnetic semiconductors have been prepared by implantation method. In these samples, sheet resistance shows weak temperature dependence, and the extraordinary Hall effect with positive coefficient is observed. In small Co content samples, Hall resistance increases with decreasing temperature and maximum value of 3.6x10 -2 Ω is obtained at 150 K

  3. Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

    Science.gov (United States)

    Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

    2012-07-01

    Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

  4. Diode-Pumped Mode-Locked LiSAF Laser; FINAL

    International Nuclear Information System (INIS)

    None

    1996-01-01

    Under this contract we have developed Cr(sup 3+):LiSrAlF(sub 6) (Cr:LiSAF, LiSAF) mode-locked lasers suitable for generation of polarized electrons for CEBAF. As 670 nm is an excellent wavelength for optical pumping of Cr:LiSAF, we have used a LIGHTWAVE developed 670 nm diode pump module that combines the output of ten diode lasers and yields approximately 2 Watts of optical power. By the use of a diffraction limited pump beam however, it is possible to maintain a small mode size through the length of the crystal and hence extract more power from Cr:LiSAF laser. For this purpose we have developed a 1 Watt, red 660nm laser (LIGHTWAVE model 240R) which serves as an ideal pump for Cr:LiSAF and is a potential replacement of costly and less robust krypton laser. This new system is to compliment LIGHTWAVE Series 240, and is currently being considered for commercialization. Partially developed under this contract is LIGHTWAVEs product model 240 which has already been in our production lines for a few months and is commercially available. This laser produces 2 Watts of output at 532 nm using some of the same technology developed for production of the 660nm red system. It is a potential replacement for argon ion lasers and has better current and cooling requirements and is an excellent pump source for Ti:Al(sub 2)O(sub 3). Also, as a direct result of this contract we now have the capability of commercially developing a mode-locked 100MHz Cr:LiSAF system. Such a laser could be added to our 100 MHz LIGHTWAVE Series 131. The Series 131 lasers provide pico second pulses and were originally developed under another DOE SBIR. Both models of LIGHTWAVE Series 240 lasers, the fiber coupled pump module and the 100MHz LiSAF laser of Series 131 have been partially developed under this contract, and are commercially competitive products

  5. Stabilization of self-mode-locked quantum dash lasers by symmetric dual-loop optical feedback

    Science.gov (United States)

    Asghar, Haroon; Wei, Wei; Kumar, Pramod; Sooudi, Ehsan; McInerney, John. G.

    2018-02-01

    We report experimental studies of the influence of symmetric dual-loop optical feedback on the RF linewidth and timing jitter of self-mode-locked two-section quantum dash lasers emitting at 1550 nm. Various feedback schemes were investigated and optimum levels determined for narrowest RF linewidth and low timing jitter, for single-loop and symmetric dual-loop feedback. Two symmetric dual-loop configurations, with balanced and unbalanced feedback ratios, were studied. We demonstrate that unbalanced symmetric dual loop feedback, with the inner cavity resonant and fine delay tuning of the outer loop, gives narrowest RF linewidth and reduced timing jitter over a wide range of delay, unlike single and balanced symmetric dual-loop configurations. This configuration with feedback lengths 80 and 140 m narrows the RF linewidth by 4-67x and 10-100x, respectively, across the widest delay range, compared to free-running. For symmetric dual-loop feedback, the influence of different power split ratios through the feedback loops was determined. Our results show that symmetric dual-loop feedback is markedly more effective than single-loop feedback in reducing RF linewidth and timing jitter, and is much less sensitive to delay phase, making this technique ideal for applications where robustness and alignment tolerance are essential.

  6. Monolithic mode locked DBR laser with multiple-bandgap MQW structure realized by selective area growth

    Energy Technology Data Exchange (ETDEWEB)

    Schilling, M.; Bouayad-Amine, J.; Feeser, T.; Haisch, H.; Kuehn, E.; Lach, E.; Satzke, K.; Weber, J.; Zielinski, E. [Alcatel Telecom, Stuttgart (Germany). Research Div.

    1996-12-31

    The realization of novel monolithically integrated multiple-segment pulse laser sources in InGaAsP MQW technology is reported. The MQW layers for all functional sections of these devices, the modulator, the active (gain) and the passive waveguide, as well as the Bragg section were grown in a single selective area growth (SAG) step by LP-MOVPE on SiO{sub 2} patterned 2 inch InP substrates. Due to a properly selected pattern geometry 3 different bandgap regions with smooth interfaces are thereby formed along the laser cavity. The more than 4 mm long DBR lasers which exhibit a threshold current as low as 30 mA were mode locked by an intra-cavity electroabsorption modulator applying a sinusoidal voltage at around 10 GHz. In this way an optical pulse train with pulse widths < 13 ps (measured with a streak camera) and high extinction ratio was generated. A time-bandwidth product of 0.5 close to the Fourier limit is obtained. This device is very attractive for signal generation in 40 Gb/s OTDM transmission systems at 1.55 {micro}m wavelength.

  7. Advances and Promises of Layered Halide Hybrid Perovskite Semiconductors

    NARCIS (Netherlands)

    Pedesseau, Laurent; Sapori, Daniel; Traore, Boubacar; Robles, Roberto; Fang, Hong-Hua; Loi, Maria Antonietta; Tsai, Hsinhan; Nie, Wanyi; Blancon, Jean-Christophe; Neukirch, Amanda; Tretiak, Sergei; Mohite, Aditya D.; Katan, Claudine; Even, Jacky; Kepenekian, Mikael

    2016-01-01

    Layered halide hybrid organic inorganic perovskites (HOP) have been the subject of intense investigation before the rise of three-dimensional (3D) HOP and their impressive performance in solar cells. Recently, layered HOP have also been proposed as attractive alternatives for photostable solar cells

  8. Hysteresis in the tearing mode locking/unlocking due to resonant magnetic perturbations in EXTRAP T2R

    Science.gov (United States)

    Fridström, R.; Frassinetti, L.; Brunsell, P. R.

    2015-10-01

    The physical mechanisms behind the hysteresis in the tearing mode locking and unlocking to a resonant magnetic perturbation (RMP) are experimentally studied in EXTRAP T2R reversed-field pinch. The experiments show that the electromagnetic and the viscous torque increase with increasing perturbation amplitude until the mode locks to the wall. At the wall-locking, the plasma velocity reduction profile is peaked at the radius where the RMP is resonant. Thereafter, the viscous torque drops due to the relaxation of the velocity in the central plasma. This is the main reason for the hysteresis in the RMP locking and unlocking amplitude. The increased amplitude of the locked tearing mode produces further deepening of the hysteresis. Both experimental results are in qualitative agreement with the model in Fitzpatrick et al (2001 Phys. Plasmas 8 4489)

  9. Short pulse generation from a passively mode-locked fiber optical parametric oscillator with optical time-stretch.

    Science.gov (United States)

    Qiu, Yi; Wei, Xiaoming; Du, Shuxin; Wong, Kenneth K Y; Tsia, Kevin K; Xu, Yiqing

    2018-04-16

    We propose a passively mode-locked fiber optical parametric oscillator assisted with optical time-stretch. Thanks to the lately developed optical time-stretch technique, the onset oscillating spectral components can be temporally dispersed across the pump envelope and further compete for the parametric gain with the other parts of onset oscillating sidebands within the pump envelope. By matching the amount of dispersion in optical time-stretch with the pulse width of the quasi-CW pump and oscillating one of the parametric sidebands inside the fiber cavity, we numerically show that the fiber parametric oscillator can be operated in a single pulse regime. By varying the amount of the intracavity dispersion, we further verify that the origin of this single pulse mode-locking regime is due to the optical pulse stretching and compression.

  10. Wavelength-stepped, actively mode-locked fiber laser based on wavelength-division-multiplexed optical delay lines

    Science.gov (United States)

    Lee, Eunjoo; Kim, Byoung Yoon

    2017-12-01

    We propose a new scheme for an actively mode-locked wavelength-swept fiber laser that produces a train of discretely wavelength-stepped pulses from a short fiber cavity. Pulses with different wavelengths are split and combined by standard wavelength division multiplexers with fiber delay lines. As a proof of concept, we demonstrate a laser using an erbium doped fiber amplifier and commercially available wavelength-division multiplexers with wavelength spacing of 0.8 nm. The results show simultaneous mode-locking at three different wavelengths. Laser output parameters in time domain, optical and radio frequency spectral domain, and the noise characteristics are presented. Suggestions for the improved design are discussed.

  11. Structure of picosecond pulses of a Q-switched and mode-locked diode-pumped Nd:YAG laser

    Energy Technology Data Exchange (ETDEWEB)

    Donin, V I; Yakovin, D V; Gribanov, A V [Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2015-12-31

    The pulse duration of a diode-pumped Nd:YAG laser, in which Q-switching with mode-locking (QML regime) is achieved using a spherical mirror and a travelling-wave acousto-optic modulator, is directly measured with a streak camera. It is found that the picosecond pulses can have a non-single-pulse structure, which is explained by excitation of several competing transverse modes in the Q-switching regime with a pulse repetition rate of 1 kHz. In the case of cw mode-locking (without Q-switching), a new (auto-QML) regime is observed, in which the pulse train repetition rate is determined by the frequency of the relaxation oscillations of the laser field while the train contains single picosecond pulses. (control of laser radiation parameters)

  12. Compact 84 GHz passive mode-locked fiber laser using dual-fiber coupled fused-quartz microresonator

    Science.gov (United States)

    Liu, Tze-An; Hsu, Yung; Chow, Chi-Wai; Chuang, Yi-Chen; Ting, Wei-Jo; Wang, Bo-Chun; Peng, Jin-Long; Chen, Guan-Hong; Chang, Yuan-Chia

    2017-10-01

    We propose and demonstrate a compact and portable-size 84-GHz passive mode-locked fiber laser, in which a dual-fiber coupled fused-quartz microresonator is employed as the intracavity optical comb filter as well as the optical nonlinear material for optical frequency comb generation. About eight coherent optical tones can be generated in the proposed fiber laser. The 20-dB bandwidth is larger than 588 GHz. The full-width half-maximum pulse-width of the proposed laser is 2.5 ps. We also demonstrate the feasibility of using the proposed passive mode-locked fiber laser to carry a 5-Gbit/s on-off-keying signal and transmit over 20-km standard single mode fiber. A 7% forward error correction requirement can be achieved, showing the proposed fiber laser can be a potential candidate for fiber-wireless applications.

  13. Passive mode locking at harmonics of the free spectral range of the intracavity filter in a fiber ring laser.

    Science.gov (United States)

    Zhang, Shumin; Lu, Fuyun; Dong, Xinyong; Shum, Ping; Yang, Xiufeng; Zhou, Xiaoqun; Gong, Yandong; Lu, Chao

    2005-11-01

    We report the passive mode-locking at harmonics of the free spectral range (FSR) of the intracavity multi-channel filter in a fiber ring laser. The laser uses a sampled fiber Bragg grating (SFBG) with a free spectral range (FSR) of 0.8 nm, or 99 GHz at 1555 nm, and a length of highly nonlinear photonic crystal fiber with low and flat dispersion. Stable picosecond soliton pulse trains with twofold to sevenfold enhancement in the repetition rate, relative to the FSR of the SFBG, have been achieved. The passive mode-locking mechanism that is at play in this laser relies on a dissipative four-wave mixing process and switching of repetition rate is realized simply by adjustment of the intracavity polarization controllers.

  14. Adaptation to the edge of chaos in a self-starting Kerr-lens mode-locked laser

    Science.gov (United States)

    Hsu, C. C.; Lin, J. H.; Hsieh, W. F.

    2009-08-01

    We experimentally and numerically demonstrated that self-focusing acts as a slow-varying control parameter that suppresses the transient chaos to reach a stable mode-locking (ML) state in a self-starting Kerr-lens mode-locked Ti:sapphire laser without external modulation and feedback control. Based on Fox-Li’s approach, including the self-focusing effect, the theoretical simulation reveals that the self-focusing effect is responsible for the self-adaptation. The self-adaptation occurs at the boundary between the chaotic and continuous output regions in which the laser system begins with a transient chaotic state with fractal correlation dimension, and then evolves with reducing dimension into the stable ML state.

  15. 256 fs, 2 nJ soliton pulse generation from MoS2 mode-locked fiber laser

    Science.gov (United States)

    Jiang, Zike; Chen, Hao; Li, Jiarong; Yin, Jinde; Wang, Jinzhang; Yan, Peiguang

    2017-12-01

    We demonstrate an Er-doped fiber laser (EDFL) mode-locked by a MoS2 saturable absorber (SA), delivering a 256 fs, 2 nJ soliton pulse at 1563.4 nm. The nonlinear property of the SA prepared by magnetron sputtering deposition (MSD) is measured with a modulation depth (MD) of ∼19.48% and a saturable intensity of 4.14 MW/cm2. To the best of our knowledge, the generated soliton pulse has the highest pulse energy of 2 nJ among the reported mode-locked EDFLs based on transition metal dichalcogenides (TMDs). Our results indicate that MSD-grown SAs could offer an exciting platform for high pulse energy and ultrashort pulse generation.

  16. Mode-locking operation of a flash-lamp-pumped Nd:YAG laser at 1.064 μm with Zakharov-Manakov solitons

    International Nuclear Information System (INIS)

    Andreana, M; Tonello, A; Couderc, V; Baronio, F; Conforti, M; De Angelis, C

    2011-01-01

    We report experimental results on the mode-locked operation of a flash-lamp-pumped Nd:YAG laser at 1.064 μm. The KTP crystal, which induces passive mode-locking, exploits the existence and properties of spatial Zakharov-Manakov soliton dynamics. A train of pulses with duration close to 100 ps, repetition rate of 136 MHz and modulation depth almost 100% has been produced. The mode-locked pulses are modulated with a longer 180 ns pulse envelope with repetition rate of 10 Hz

  17. Free-standing nano-scale graphite saturable absorber for passively mode-locked erbium doped fiber ring laser

    International Nuclear Information System (INIS)

    Lin, Y-H; Lin, G-R

    2012-01-01

    The free-standing graphite nano-particle located between two FC/APC fiber connectors is employed as the saturable absorber to passively mode-lock the ring-type Erbium-doped fiber laser (EDFL). The host-solvent-free graphite nano-particles with sizes of 300 – 500 nm induce a comparable modulation depth of 54%. The interlayer-spacing and lattice fluctuations of polished graphite nano-particles are observed from the weak 2D band of Raman spectrum and the azimuth angle shift of –0.32 ° of {002}-orientation dependent X-ray diffraction peak. The graphite nano-particles mode-locked EDFL generates a 1.67-ps pulsewidth at linearly dispersion-compensated regime with a repetition rate of 9.1 MHz. The time-bandwidth product of 0.325 obtained under a total intra-cavity group-delay-dispersion of –0.017 ps 2 is nearly transform-limited. The extremely high stability of the nano-scale graphite saturable absorber during mode-locking is observed at an intra-cavity optical energy density of 7.54 mJ/cm 2 . This can be attributed to its relatively high damage threshold (one order of magnitude higher than the graphene) on handling the optical energy density inside the EDFL cavity. The graphite nano-particle with reduced size and sufficient coverage ratio can compete with other fast saturable absorbers such as carbon nanotube or graphene to passively mode-lock fiber lasers with decreased insertion loss and lasing threshold

  18. Passive harmonic mode locking by mode selection in Fabry-Perot diode lasers with patterned effective index.

    Science.gov (United States)

    Bitauld, David; Osborne, Simon; O'Brien, Stephen

    2010-07-01

    We demonstrate passive harmonic mode locking of a quantum-well laser diode designed to support a discrete comb of Fabry-Perot modes. Spectral filtering of the mode spectrum was achieved using a nonperiodic patterning of the cavity effective index. By selecting six modes spaced at twice the fundamental mode spacing, near-transform-limited pulsed output with 2 ps pulse duration was obtained at a repetition rate of 100 GHz.

  19. Generation of bound states of pulses in a SESAM mode-locked Cr:ZnSe laser

    Science.gov (United States)

    Bu, Xiangbao; Shi, Yuhang; Xu, Jia; Li, Huijuan; Wang, Pu

    2018-06-01

    We report on the generation of bound states of pulses in a SESAM mode-locked Cr:ZnSe laser around 2415 nm. A thulium-doped double-clad fiber laser at 1908 nm was used as the pump source. Bound states with various pulse separations at different dispersion regimes were obtained. Especially, in the anomalous dispersion regime, vibrating bound state of solitons exhibiting an evolving phase was obtained.

  20. Increasing the mode-locking efficiency of a cw solid-state laser with an auxiliary cavity

    International Nuclear Information System (INIS)

    Kalashnikov, V.L.; Kalosha, V.P.; Mikhailov, V.P.; Demchuk, M.I.

    1992-01-01

    It is predicted theoretically that the efficiency of self-mode locking can be raised by means of a bleachable shutter in the main cavity or an auxiliary cavity. The laser emits a stable train of ultrashort pulses under these conditions. The theory is based on a fluctuation model of the operation of a cw solid-state laser with a linear auxiliary cavity. The increase in efficiency involves a broadening of the region of parameter values of the system in which self-mode locking occurs, a significant decrease in the threshold pump intensity, and a reduced sensitivity of the operation to the phase mismatch of the lengths of the cavities. It is shown, for the first time, that a stable train of double ultrashort pulses can be generated by a system with a shutter in the auxiliary cavity. It is also shown that a self-mode locking is possible in the case in which there is a phase mismatch of the cavity lengths and there is no phase self-modulation in the main cavity. 15 refs., 8 figs

  1. Mid-infrared supercontinuum generation in tapered ZBLAN fiber with a standard Erbium mode-locked fiber laser

    DEFF Research Database (Denmark)

    Kubat, Irnis; Moselund, Peter M.; Bang, Ole

    2013-01-01

    to generate a broadband SC using direct pumping with commercially available Erbium (Er) mode-locked fiber lasers at 1550 nm. Formation of SC is manipulated both in the UV and IR by changing the fiber dispersion and nonlinearity using tapers. This has been much studied in various silica fiber designs...... and is now also becoming used in ZBLAN [2], and other soft glasses such as chalcogenide [3] and tellurite [4]. The aim of this nummerical work is to show how pumping tapered commercially available ZBLAN fibers with an Er mode-locked fiber laser can generate a broadband SC approaching the ZBLAN long....... commercially available), core diameter Dc=7 μm, and ZDW=1.5 μm, is pumped with TFWHM=10 ps and P0=10 kW pulses from an Er mode-locked laser with a 40 MHz repetition rate and 4W average power. The resulting MIR SC seen in Fig. 1(b) is based on Modulation Instability breakup of the pump pulse, which generates...

  2. Synthesis and optical properties of novel organic-inorganic hybrid nanolayer structure semiconductors

    International Nuclear Information System (INIS)

    Zhang Sanjun; Lanty, Gaetan; Lauret, Jean-Sebastien; Deleporte, Emmanuelle; Audebert, Pierre; Galmiche, Laurent

    2009-01-01

    We report on the synthesis of some novel organic-inorganic hybrid 2D perovskite semiconductors (R-(CH 2 ) n NH 3 ) 2 PbX 4 . These semiconductors are self-assembled intercalation nanolayers and have a multi-quantum-well energy level structure. We systematically vary the characteristic of organic groups (R-(CH 2 ) n NH 3 + ) to study the relationship between their structures and the optical properties of (R-(CH 2 ) n NH 3 ) 2 PbX 4 . From optical absorption and photoluminescence spectroscopy experiments performed on series of samples, we find some trends of choosing the organic groups to improve the optical performance of (R-(CH 2 ) n NH 3 ) 2 PbX 4 . A new organic group, which allows synthesis of nanolayer perovskite semiconductors with quite high photoluminescence efficiency and better long-term stability, has been found.

  3. Improvement of cosmic ray ruggedness of hybrid vehicles power semiconductor devices

    International Nuclear Information System (INIS)

    Nishida, Shuichi; Ohnishi, Toyokazu; Fujikawa, Touma; Nose, Noboru; Hamada, Kimimori; Shoji, Tomoyuki; Ishiko, Masayasu

    2010-01-01

    Power semiconductors which are used under high voltage conditions in HVs (Hybrid Vehicles) are required to have high destruction tolerance against cosmic rays as well as to meet conventional quality standards. In this paper, an SEB (Single Event Burnout) failure mechanism induced by cosmic rays in IGBTs (Insulated Gate Bipolar Transistors) was investigated. Through an optimized device design in which thyristor action was suppressed, the device destruction tolerance was greatly improved. (author)

  4. Interplay of Phonon and Exciton-Mediated Superconductivity in Hybrid Semiconductor-Superconductor Structures

    Science.gov (United States)

    Skopelitis, Petros; Cherotchenko, Evgenia D.; Kavokin, Alexey V.; Posazhennikova, Anna

    2018-03-01

    We predict a strong enhancement of the critical temperature in a conventional Bardeen-Cooper-Schrieffer (BCS) superconductor in the presence of a bosonic condensate of exciton polaritons. The effect depends strongly on the ratio of the cutoff frequencies for phonon and exciton-polariton mediated BCS superconductivity, respectively. We also discuss a possible design of hybrid semiconductor-superconductor structures suitable for the experimental observation of such an effect.

  5. Multiwavelength mode-locked erbium-doped fiber laser based on the interaction of graphene and fiber-taper evanescent field

    International Nuclear Information System (INIS)

    Luo, Z Q; Wang, J Z; Zhou, M; Xu, H Y; Cai, Z P; Ye, C C

    2012-01-01

    We report on the generation of multiwavelength passively mode-locked pulses in an erbium-doped fiber laser (EDFL) based on the interaction of graphene and fiber-taper evanescent field. Graphene-polymer nanocomposites in aqueous suspension are trapped by the optical evanescent light and deposited on taper region. The graphene-deposited fiber-taper device not only acts as an excellent saturable absorber for mode-locking, but also induces a polarizing effect to form an artificial birefringent filter for multiwavelength selection. By simultaneously exploiting both functions of this device, four-wavelength continuous-wave mode-locking operation of an EDFL is stably initiated with a pulse width of 8.8 ps and a fundamental repetition rate of 8.034 MHz. This is the first time, to our knowledge, the mode-locked EDFL using such a new geometry of graphene-based tapered-fiber saturable absorber has been demonstrated

  6. FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

  7. Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors.

    Science.gov (United States)

    Jie, Wenjing; Hao, Jianhua

    2014-06-21

    Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

  8. Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime

    NARCIS (Netherlands)

    Heck, M.J.R.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Eikema, K.S.E.; Ubachs, W.; Anantathanasarn, S.; Nötzel, R.

    2009-01-01

    Passive mode-locking in two-section InAs/InP quantum dot laser diodes operating at wavelengths around 1.55 µm is reported. For a 4.6-GHz laser, a large operating regime of stable mode-locking, with RF-peak heights of over 40 dB, is found for injection currents of 750 mA up to 1.0 A and for values of

  9. Surface-enhanced Raman effect in hybrid metal–semiconductor nanoparticle assemblies

    International Nuclear Information System (INIS)

    Lughi, Vanni; Bonifacio, Alois; Barbone, Matteo; Marsich, Lucia; Sergo, Valter

    2013-01-01

    Hybrid metal–semiconductor nanoparticles consisting of silver nanoparticle cores (AgNPs) coated with a layer of CdSe quantum dots (QDs) have been studied by Raman spectroscopy. The hybrid nanoparticles were prepared via electrostatic interaction by mixing aqueous suspensions of QDs and AgNPs, where opposite charges on the AgNPs and QDs surfaces were induced by opportunely selected capping agents. Assemblies of such hybrid nanoparticles show an increased intensity of the Raman spectrum of up to 500 times, when compared to that of the sole QDs. This enhancement is attributed to the SERS effect (Surface-enhanced Raman scattering). Such enhancement of the Raman modes suggests several opportunities for further research, both in imaging and sensing applications.

  10. Hybrid artificial photosynthetic systems comprising semiconductors as light harvesters and biomimetic complexes as molecular cocatalysts.

    Science.gov (United States)

    Wen, Fuyu; Li, Can

    2013-11-19

    Solar fuel production through artificial photosynthesis may be a key to generating abundant and clean energy, thus addressing the high energy needs of the world's expanding population. As the crucial components of photosynthesis, the artificial photosynthetic system should be composed of a light harvester (e.g., semiconductor or molecular dye), a reduction cocatalyst (e.g., hydrogenase mimic, noble metal), and an oxidation cocatalyst (e.g., photosystem II mimic for oxygen evolution from water oxidation). Solar fuel production catalyzed by an artificial photosynthetic system starts from the absorption of sunlight by the light harvester, where charge separation takes place, followed by a charge transfer to the reduction and oxidation cocatalysts, where redox reaction processes occur. One of the most challenging problems is to develop an artificial photosynthetic solar fuel production system that is both highly efficient and stable. The assembly of cocatalysts on the semiconductor (light harvester) not only can facilitate the charge separation, but also can lower the activation energy or overpotential for the reactions. An efficient light harvester loaded with suitable reduction and oxidation cocatalysts is the key for high efficiency of artificial photosynthetic systems. In this Account, we describe our strategy of hybrid photocatalysts using semiconductors as light harvesters with biomimetic complexes as molecular cocatalysts to construct efficient and stable artificial photosynthetic systems. We chose semiconductor nanoparticles as light harvesters because of their broad spectral absorption and relatively robust properties compared with a natural photosynthesis system. Using biomimetic complexes as cocatalysts can significantly facilitate charge separation via fast charge transfer from the semiconductor to the molecular cocatalysts and also catalyze the chemical reactions of solar fuel production. The hybrid photocatalysts supply us with a platform to study the

  11. Photophysical Properties of Novel Organic, Inorganic, and Hybrid Semiconductor Materials

    Science.gov (United States)

    Chang, Angela Yenchi

    For the past 200 years, novel materials have driven technological progress, and going forward these advanced materials will continue to deeply impact virtually all major industrial sectors. Therefore, it is vital to perform basic and applied research on novel materials in order to develop new technologies for the future. This dissertation describes the results of photophysical studies on three novel materials with electronic and optoelectronic applications, namely organic small molecules DTDCTB with C60 and C70, colloidal indium antimonide (InSb) nanocrystals, and an organic-inorganic hybrid perovskite with the composition CH3NH3PbI 3-xClx, using transient absorption (TA) and photoluminescence (PL) spectroscopy. In chapter 2, we characterize the timescale and efficiency of charge separation and recombination in thin film blends comprising DTDCTB, a narrow-band gap electron donor, and either C60 or C70 as an electron acceptor. TA and time-resolved PL studies show correlated, sub-picosecond charge separation times and multiple timescales of charge recombination. Our results indicate that some donors fail to charge separate in donor-acceptor mixed films, which suggests material manipulations may improve device efficiency. Chapter 3 describes electron-hole pair dynamics in strongly quantum-confined, colloidal InSb nanocrystal quantum dots. For all samples, TA shows a bleach feature that, for several picoseconds, dramatically red-shifts prior to reaching a time-independent position. We suggest this unusual red-shift relates transient population flow through two energetically comparable conduction band states. From pump-power-dependent measurements, we also determine biexciton lifetimes. In chapter 4, we examine carrier dynamics in polycrystalline methylammonium lead mixed halide perovskite (CH3NH3PbI3-xCl x) thin films as functions of temperature and photoexcitation wavelength. At room temperature, the long-lived TA signals stand in contrast to PL dynamics, where the

  12. Time-Gating Processes in Intra-Cavity Mode-Locking Devices Like Saturable Absorbers and Kerr Cells

    Science.gov (United States)

    Prasad, Narasimha; Roychoudhuri, Chandrasekhar

    2010-01-01

    Photons are non-interacting entities. Light beams do not interfere by themselves. Light beams constituting different laser modes (frequencies) are not capable of re-arranging their energies from extended time-domain to ultra-short time-domain by themselves without the aid of light-matter interactions with suitable intra-cavity devices. In this paper we will discuss the time-gating properties of intra-cavity "mode-locking" devices that actually help generate a regular train of high energy wave packets.

  13. Self-oscillations in cw solid-state ultrashort-pulse-generating lasers with mode locking by self-focusing

    International Nuclear Information System (INIS)

    Kalashnikov, V L; Krimer, D O; Mejid, F; Poloiko, I G; Mikhailov, V P

    1999-01-01

    Steady-state and transient regimes of ultrashort pulse generation are studied for cw solid-state lasers with mode locking by self-focusing. It is shown that the control parameter, which governs the nature of lasing, is the relationship between self-phase-modulation and the saturation intensity of an efficient shutter, induced by the Kerr self-focusing. Numerical modelling based on mapping the parameters of a quasi-soliton ultrashort pulse, considered in the aberration-free approximation, yields results in good agreement with experiments. (control of laser radiation parameters)

  14. Broadly tunable femtosecond mode-locking in a Tm:KYW laser near 2 μm.

    Science.gov (United States)

    Lagatsky, A A; Calvez, S; Gupta, J A; Kisel, V E; Kuleshov, N V; Brown, C T A; Dawson, M D; Sibbett, W

    2011-05-09

    Efficient mode-locking in a Tm:KY(WO(4))(2) laser is demonstrated by using InGaAsSb quantum-well SESAMs. Self-starting ultrashort pulse generation was realized in the 1979-2074 nm spectral region. Maximum average output power up to 411 mW was produced around 1986 nm with the corresponding pulse duration and repetition rate of 549 fs and 105 MHz respectively. Optimised pulse durations of 386 fs were produced with an average power of 235 mW at 2029 nm. © 2011 Optical Society of America

  15. Q-switching and mode-locking in a diode-pumped frequency-doubled Nd : YAG laser

    International Nuclear Information System (INIS)

    Donin, Valerii I; Yakovin, Dmitrii V; Gribanov, A V

    2012-01-01

    A new method for obtaining Q-switching simultaneously with mode-locking using one travelling-wave acousto-optic modulator in a frequency-doubled Nd : YAG laser cavity is described. Further shortening of output laser pulses (from 40 to 3.25 ps) is achieved by forming a Kerr lens in the frequency-doubling crystal. At an average power of ∼ 2 W and a Q-switching rate of 2 kHz, the peak power of the stably operating reached ∼ 50 MW.

  16. Kerr-Lens Mode-Locked Femtosecond Yb:GdYSiO5 Laser Directly Pumped by a Laser Diode

    Directory of Open Access Journals (Sweden)

    Jiangfeng Zhu

    2015-10-01

    Full Text Available We demonstrate the first Kerr-lens mode-locked operation in a diode-pumped Yb:GdYSiO5 oscillator. Under a diode pump power of 5 W, 141 fs pulses with an average power of 237 mW were obtained at a repetition rate of 118 MHz. The central wavelength was at 1094 nm with a bandwidth of 10.1 nm. Shorter pulses were obtained by adjusting the cavity to operate at a shorter wavelength, resulting in 55 fs pulse duration at the central wavelength of 1054 nm with a bandwidth of 23.5 nm.

  17. LD end pumped mode locked and cavity dumped Nd:YAP laser at 1.34 μm

    Science.gov (United States)

    Wang, X.; Wang, S.; Rhee, H.; Eichler, H. J.; Meister, S.

    2011-06-01

    We report a LD end pumped actively mode locked, passively Q switched and cavity dumped Nd:YAP laser at 1.34 μm. The dumped output pulse energy of 160 μJ is obtained at a repetition rate of 10 Hz. Passing through a LD end pumped, double-passed Nd:YAP amplifier the pulse energy is amplified to 1.44 mJ. The corresponding amplification factor is 9. Stimulated Raman scattering experiment is taken with a 9 mm long PbWO4 Raman crystal. Maximum of 20% Raman conversion is reached.

  18. Synthesis and spectroscopic properties of silica-dye-semiconductor nanocrystal hybrid particles.

    Science.gov (United States)

    Ren, Ting; Erker, Wolfgang; Basché, Thomas; Schärtl, Wolfgang

    2010-12-07

    We prepared silica-dye-nanocrystal hybrid particles and studied the energy transfer from semiconductor nanocrystals (= donor) to organic dye molecules (= acceptor). Multishell CdSe/CdS/ZnS semiconductor nanocrystals were adsorbed onto monodisperse Stöber silica particles with an outer silica shell of thickness 2-23 nm containing organic dye molecules (Texas Red). The thickness of this dye layer has a strong effect on the energy transfer efficiency, which is explained by the increase in the number of dye molecules homogeneously distributed within the silica shell, in combination with an enhanced surface adsorption of nanocrystals with increasing dye amount. Our conclusions were underlined by comparison of the experimental results with numerically calculated FRET efficiencies and by control experiments confirming attractive interaction between the nanocrystals and Texas Red freely dissolved in solution.

  19. Rapid Three-Dimensional Printing in Water Using Semiconductor-Metal Hybrid Nanoparticles as Photoinitiators.

    Science.gov (United States)

    Pawar, Amol Ashok; Halivni, Shira; Waiskopf, Nir; Ben-Shahar, Yuval; Soreni-Harari, Michal; Bergbreiter, Sarah; Banin, Uri; Magdassi, Shlomo

    2017-07-12

    Additive manufacturing processes enable fabrication of complex and functional three-dimensional (3D) objects ranging from engine parts to artificial organs. Photopolymerization, which is the most versatile technology enabling such processes through 3D printing, utilizes photoinitiators that break into radicals upon light absorption. We report on a new family of photoinitiators for 3D printing based on hybrid semiconductor-metal nanoparticles. Unlike conventional photoinitiators that are consumed upon irradiation, these particles form radicals through a photocatalytic process. Light absorption by the semiconductor nanorod is followed by charge separation and electron transfer to the metal tip, enabling redox reactions to form radicals in aerobic conditions. In particular, we demonstrate their use in 3D printing in water, where they simultaneously form hydroxyl radicals for the polymerization and consume dissolved oxygen that is a known inhibitor. We also demonstrate their potential for two-photon polymerization due to their giant two-photon absorption cross section.

  20. Boosting the ambipolar performance of solution-processable polymer semiconductors via hybrid side-chain engineering.

    Science.gov (United States)

    Lee, Junghoon; Han, A-Reum; Yu, Hojeong; Shin, Tae Joo; Yang, Changduk; Oh, Joon Hak

    2013-06-26

    Ambipolar polymer semiconductors are highly suited for use in flexible, printable, and large-area electronics as they exhibit both n-type (electron-transporting) and p-type (hole-transporting) operations within a single layer. This allows for cost-effective fabrication of complementary circuits with high noise immunity and operational stability. Currently, the performance of ambipolar polymer semiconductors lags behind that of their unipolar counterparts. Here, we report on the side-chain engineering of conjugated, alternating electron donor-acceptor (D-A) polymers using diketopyrrolopyrrole-selenophene copolymers with hybrid siloxane-solubilizing groups (PTDPPSe-Si) to enhance ambipolar performance. The alkyl spacer length of the hybrid side chains was systematically tuned to boost ambipolar performance. The optimized three-dimensional (3-D) charge transport of PTDPPSe-Si with pentyl spacers yielded unprecedentedly high hole and electron mobilities of 8.84 and 4.34 cm(2) V(-1) s(-1), respectively. These results provide guidelines for the molecular design of semiconducting polymers with hybrid side chains.

  1. The structure of mode-locking regions of piecewise-linear continuous maps: II. Skew sawtooth maps

    Science.gov (United States)

    Simpson, D. J. W.

    2018-05-01

    In two-parameter bifurcation diagrams of piecewise-linear continuous maps on , mode-locking regions typically have points of zero width known as shrinking points. Near any shrinking point, but outside the associated mode-locking region, a significant proportion of parameter space can be usefully partitioned into a two-dimensional array of annular sectors. The purpose of this paper is to show that in these sectors the dynamics is well-approximated by a three-parameter family of skew sawtooth circle maps, where the relationship between the skew sawtooth maps and the N-dimensional map is fixed within each sector. The skew sawtooth maps are continuous, degree-one, and piecewise-linear, with two different slopes. They approximate the stable dynamics of the N-dimensional map with an error that goes to zero with the distance from the shrinking point. The results explain the complicated radial pattern of periodic, quasi-periodic, and chaotic dynamics that occurs near shrinking points.

  2. Q-switching and mode-locking pulse generation with graphene oxide paper-based saturable absorber

    Directory of Open Access Journals (Sweden)

    Sulaiman Wadi Harun

    2015-06-01

    Full Text Available Q-switched and mode-locked erbium-doped fibre lasers (EDFLs are demonstrated by using non-conductive graphene oxide (GO paper as a saturable absorber (SA. A stable and self-starting Q-switched operation was achieved at 1534.4 nm by using a 0.8 m long erbium-doped fibre (EDF as a gain medium. The pulse repetition rate changed from 14.3 to 31.5 kHz, whereas the corresponding pulse width decreased from 32.8 to 13.8 µs as the pump power increased from 22 to 50.5 mW. A narrow spacing dual-wavelength Q-switched EDFL could also be realised by including a photonics crystal fibre and a tunable Bragg filter in the setup. It can operate at a maximum repetition rate of 31 kHz, with a pulse duration of 7.04 µs and pulse energy of 2.8 nJ. Another GOSA was used to realise mode-locked EDFL in a different cavity consisting of a 1.6 m long EDF in conjunction with 1480 nm pumping. The laser generated a soliton pulse train with a repetition rate of 15.62 MHz and pulse width of 870 fs. It is observed that the proposed fibre lasers have a low pulsing threshold pump power as well as a low damage threshold.

  3. Repetitively Mode-Locked Cavity-Enhanced Absorption Spectroscopy (RML-CEAS for Near-Infrared Gas Sensing

    Directory of Open Access Journals (Sweden)

    Qixin He

    2017-12-01

    Full Text Available A Pound-Drever-Hall (PDH-based mode-locked cavity-enhanced sensor system was developed using a distributed feedback diode laser centered at 1.53 µm as the laser source. Laser temperature scanning, bias control of the piezoelectric ceramic transducer (PZT and proportional-integral-derivative (PID feedback control of diode laser current were used to repetitively lock the laser modes to the cavity modes. A gas absorption spectrum was obtained by using a series of absorption data from the discrete mode-locked points. The 15 cm-long Fabry-Perot cavity was sealed using an enclosure with an inlet and outlet for gas pumping and a PZT for cavity length tuning. The performance of the sensor system was evaluated by conducting water vapor measurements. A linear relationship was observed between the measured absorption signal amplitude and the H2O concentration. A minimum detectable absorption coefficient of 1.5 × 10–8 cm–1 was achieved with an averaging time of 700 s. This technique can also be used for the detection of other trace gas species by targeting the corresponding gas absorption line.

  4. Continuous-wave to pulse regimes for a family of passively mode-locked lasers with saturable nonlinearity

    Science.gov (United States)

    Dikandé, Alain M.; Voma Titafan, J.; Essimbi, B. Z.

    2017-10-01

    The transition dynamics from continuous-wave to pulse regimes of operation for a generic model of passively mode-locked lasers with saturable absorbers, characterized by an active medium with non-Kerr nonlinearity, are investigated analytically and numerically. The system is described by a complex Ginzburg-Landau equation with a general m:n saturable nonlinearity (i.e {I}m/{(1+{{Γ }}I)}n, where I is the field intensity and m and n are two positive numbers), coupled to a two-level gain equation. An analysis of stability of continuous waves, following the modulational instability approach, provides a global picture of the self-starting dynamics in the system. The analysis reveals two distinct routes depending on values of the couple (m, n), and on the dispersion regime: in the normal dispersion regime, when m = 2 and n is arbitrary, the self-starting requires positive values of the fast saturable absorber and nonlinearity coefficients, but negative values of these two parameters for the family with m = 0. However, when the spectral filter is negative, the laser can self-start for certain values of the input field and the nonlinearity saturation coefficient Γ. The present work provides a general map for the self-starting mechanisms of rare-earth doped figure-eight fiber lasers, as well as Kerr-lens mode-locked solid-state lasers.

  5. Femtosecond mode-locked erbium-doped fiber laser based on MoS2-PVA saturable absorber

    Science.gov (United States)

    Ahmed, M. H. M.; Latiff, A. A.; Arof, H.; Ahmad, H.; Harun, S. W.

    2016-08-01

    We fabricate a free-standing few-layer molybdenum disulfide (MoS2)-polymer composite by liquid phase exfoliation of chemically pristine MoS2 crystals and use this to demonstrate a soliton mode-locked Erbium-doped fiber laser (EDFL). A stable self-started mode-locked soliton pulse is generated by fine-tuning the rotation of the polarization controller at a low threshold pump power of 25 mW. Its solitonic behavior is verified by the presence of Kelly sidebands in the output spectrum. The central wavelength, pulse width, and repetition rate of the laser are 1573.7 nm, 630 fs, and 27.1 MHz, respectively. The maximum pulse energy is 0.141 nJ with peak power of 210 W at pump power of 170 mW. This result contributes to the growing body of work studying the nonlinear optical properties of transition metal dichalcogenides that present new opportunities for ultrafast photonic applications.

  6. Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiantao; Gross, Simon; Withford, Michael J.; Fuerbach, Alexander [Centre for Ultrahigh bandwidth Devices for Optical Systems (CUDOS) and MQ Photonics Research Centre, Dept. of Physics and Astronomy, Macquarie Univ., NSW (Australia); Zhang, Han; Guo, Zhinan [SZU-NUS Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Lab. of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering, Shenzhen Univ. (China)

    2016-08-15

    Nanosheets of bismuth telluride (Bi{sub 2}Te{sub 3}), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi{sub 2}Te{sub 3} solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm{sup 2}. For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi{sub 2}Te{sub 3}. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Production of solar chemicals: gaining selectivity with hybrid molecule/semiconductor assemblies.

    Science.gov (United States)

    Hennessey, Seán; Farràs, Pau

    2018-05-29

    Research on the production of solar fuels and chemicals has rocketed over the past decade, with a wide variety of systems proposed to harvest solar energy and drive chemical reactions. In this Feature Article we have focused on hybrid molecule/semiconductor assemblies in both powder and supported materials, summarising recent systems and highlighting the enormous possibilities offered by such assemblies to carry out highly demanding chemical reactions with industrial impact. Of relevance is the higher selectivity obtained in visible light-driven organic transformations when using molecular catalysts compared to photocatalytic materials.

  8. Mode-Locked Multichromatic X-Rays in a Seeded Free-Electron Laser for Single-Shot X-Ray Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Dao; Ding, Yuantao; Raubenheimer, Tor; Wu, Juhao; /SLAC

    2012-05-10

    We present the promise of generating gigawatt mode-locked multichromatic x rays in a seeded free-electron laser (FEL). We show that, by using a laser to imprint periodic modulation in electron beam phase space, a single-frequency coherent seed can be amplified and further translated to a mode-locked multichromatic output in an FEL. With this configuration the FEL output consists of a train of mode-locked ultrashort pulses which span a wide frequency gap with a series of equally spaced sharp lines. These gigawatt multichromatic x rays may potentially allow one to explore the structure and dynamics of a large number of atomic states simultaneously. The feasibility of generating mode-locked x rays ranging from carbon K edge ({approx}284 eV) to copper L{sub 3} edge ({approx}931 eV) is confirmed with numerical simulation using the realistic parameters of the linac coherent light source (LCLS) and LCLS-II. We anticipate that the mode-locked multichromatic x rays in FELs may open up new opportunities in x-ray spectroscopy (i.e. resonant inelastic x-ray scattering, time-resolved scattering and spectroscopy, etc.).

  9. Frequency response control of semiconductor laser by using hybrid modulation scheme.

    Science.gov (United States)

    Mieda, Shigeru; Yokota, Nobuhide; Isshiki, Ryuto; Kobayashi, Wataru; Yasaka, Hiroshi

    2016-10-31

    A hybrid modulation scheme that simultaneously applies the direct current modulation and intra-cavity loss modulation to a semiconductor laser is proposed. Both numerical calculations using rate equations and experiments using a fabricated laser show that the hybrid modulation scheme can control the frequency response of the laser by changing a modulation ratio and time delay between the two modulations. The modulation ratio and time delay provide the degree of signal mixing of the two modulations and an optimum condition is found when a non-flat frequency response for the intra-cavity loss modulation is compensated by that for the direct current modulation. We experimentally confirm a 8.64-dB improvement of the modulation sensitivity at 20 GHz compared with the pure direct current modulation with a 0.7-dB relaxation oscillation peak.

  10. Synthesis and optical properties of novel organic-inorganic hybrid nanolayer structure semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Sanjun; Lanty, Gaetan; Lauret, Jean-Sebastien [Laboratoire de Photonique Quantique et Moleculaire de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France); Deleporte, Emmanuelle, E-mail: Emmanuelle.Deleporte@lpqm.ens-cachan.fr [Laboratoire de Photonique Quantique et Moleculaire de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France); Audebert, Pierre; Galmiche, Laurent [Laboratoire de Photophysique et Photochimie Supramoleculaires et Macromoleculaires de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France)

    2009-06-15

    We report on the synthesis of some novel organic-inorganic hybrid 2D perovskite semiconductors (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. These semiconductors are self-assembled intercalation nanolayers and have a multi-quantum-well energy level structure. We systematically vary the characteristic of organic groups (R-(CH{sub 2}){sub n}NH{sub 3}{sup +}) to study the relationship between their structures and the optical properties of (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. From optical absorption and photoluminescence spectroscopy experiments performed on series of samples, we find some trends of choosing the organic groups to improve the optical performance of (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. A new organic group, which allows synthesis of nanolayer perovskite semiconductors with quite high photoluminescence efficiency and better long-term stability, has been found.

  11. Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System.

    Science.gov (United States)

    He, Yong; Zhu, Ka-Di

    2017-06-20

    In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP) and the excitons in semiconductor quantum dots (SQDs) in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.

  12. Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

    Directory of Open Access Journals (Sweden)

    Yong He

    2017-06-01

    Full Text Available In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP and the excitons in semiconductor quantum dots (SQDs in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.

  13. Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.

    Science.gov (United States)

    Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A

    2014-07-03

    The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).

  14. Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber

    International Nuclear Information System (INIS)

    Xia Han-Ding; Li He-Ping; Lan Chang-Yong; Li Chun; Deng Guang-Lei; Li Jian-Feng; Liu Yong

    2015-01-01

    Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS 2 ) saturable absorber (SA) is demonstrated. The few-layer MoS 2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS 2 can serve as an effective SA for mode-locked fiber lasers. (paper)

  15. Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

    Energy Technology Data Exchange (ETDEWEB)

    Merghem, K.; Aubin, G.; Ramdane, A. [CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis (France); Teissier, R.; Baranov, A. N. [Institute of Electronics and Systems, CNRS UMR 5214, University of Montpellier, 34095 Montpellier (France); Monakhov, A. M. [Ioffe Institute, 194021 Saint Petersburg (Russian Federation)

    2015-09-14

    We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

  16. Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

    Science.gov (United States)

    Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Ng, Geok Ing; Zhang, Yu; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang

    2017-12-01

    Passive mode locking with a fundamental repetition rate at ˜18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the absorber bias voltage (Va) on the light output. The lasing action moves to longer wavelengths markedly with increasing negative Va. The light output contains more longitudinal modes in the mode locking regime if the gain bandwidth is larger at a certain Va. Our findings provide guidelines for output characteristics of the mode-locked laser.

  17. Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

    International Nuclear Information System (INIS)

    Merghem, K.; Aubin, G.; Ramdane, A.; Teissier, R.; Baranov, A. N.; Monakhov, A. M.

    2015-01-01

    We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation

  18. Hybrid structures based on gold nanoparticles and semiconductor quantum dots for biosensor applications

    Directory of Open Access Journals (Sweden)

    Kurochkina M

    2018-04-01

    Full Text Available Margarita Kurochkina,1 Elena Konshina,1 Aleksandr Oseev,2 Soeren Hirsch3 1Centre of Information Optical Technologies, ITMO University, Saint Petersburg, Russia; 2Institute of Micro and Sensor Systems, Otto-von-Guericke-University Magdeburg, Magdeburg, Germany; 3Department of Engineering, University of Applied Sciences Brandenburg, Brandenburg an der Havel, Germany Background: The luminescence amplification of semiconductor quantum dots (QD in the presence of self-assembled gold nanoparticles (Au NPs is one of way for creating biosensors with highly efficient transduction. Aims: The objective of this study was to fabricate the hybrid structures based on semiconductor CdSe/ZnS QDs and Au NP arrays and to use them as biosensors of protein. Methods: In this paper, the hybrid structures based on CdSe/ZnS QDs and Au NP arrays were fabricated using spin coating processes. Au NP arrays deposited on a glass wafer were investigated by optical microscopy and absorption spectroscopy depending on numbers of spin coating layers and their baking temperature. Bovine serum albumin (BSA was used as the target protein analyte in a phosphate buffer. A confocal laser scanning microscope was used to study the luminescent properties of Au NP/QD hybrid structures and to test BSA. Results: The dimensions of Au NP aggregates increased and the space between them decreased with increasing processing temperature. At the same time, a blue shift of the plasmon resonance peak in the absorption spectra of Au NP arrays was observed. The deposition of CdSe/ZnS QDs with a core diameter of 5 nm on the surface of the Au NP arrays caused an increase in absorption and a red shift of the plasmon peak in the spectra. The exciton–plasmon enhancement of the QDs’ photoluminescence intensity has been obtained at room temperature for hybrid structures with Au NPs array pretreated at temperatures of 100°C and 150°C. It has been found that an increase in the weight content of BSA

  19. 50-fs pulse generation directly from a colliding-pulse mode-locked Ti:sapphire laser using an antiresonant ring mirror

    Science.gov (United States)

    Naganuma, Kazunori; Mogi, Kazuo

    1991-05-01

    50-fs pulses were directly generated from a colliding-pulse mode-locked Ti:sapphire laser. To achieve the colliding-pulse mode locking, a miniature antiresonant ring containing an organic saturable dye jet was employed as the end mirror for the linear cavity laser. Based on measured dispersion of intracavity elements, a prism pair was implemented to control the cavity dispersion. The generated pulses have no linear chirp but do exhibit parabolic instantaneous frequency owing to third-order dispersion introduced by the prism pair.

  20. Study of simultaneous q-switching and mode-locking in ND:YVO4 laser with Cr4+:YAG crystal

    International Nuclear Information System (INIS)

    Al-Sous, M. B.

    2009-01-01

    A numerical model of rate equations for a four-level solid-state laser with Cr 4+ :YAG saturable absorber including excited state absorption ESA is presented. The cavity is divided into a large number of disks and the model is solved for each disk and its local corresponding photon flux. The flux array is shifted for each recurrence simulating the movement of photons inside the cavity during the round trip. This simulator can describe the mode locking phenomenon and can be used to simulate the simultaneous mode locking and Q-switching with a saturable absorber. (author)

  1. Passive mode locking of a femtosecond Ti:sapphire laser with pulsed synchronous pumping by a finite train of picosecond pulses

    International Nuclear Information System (INIS)

    Borisevich, N A; Buganov, O V; Tikhomirov, S A; Tolstorozhev, G B; Shkred, G L

    1999-01-01

    An analysis is made, with the aid of the self-consistent nonlinear ABCD matrix method, of the specific features of the mechanism of passive mode locking of a femtosecond Ti:sapphire laser under conditions of pulsed synchronous pumping. The conditions of stable laser operation are studied. It is proposed to use an additional aperture as an element of negative feedback for the stabilisation of passive mode locking. Practical recommendations concerning the optimisation of a femtosecond laser are given. (control of laser radiation parameters)

  2. Tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser based on nonlinear polarization rotation

    International Nuclear Information System (INIS)

    Luo, A-P; Luo, Z-C; Xu, W-C; Dvoyrin, V V; Mashinsky, V M; Dianov, E M

    2011-01-01

    We demonstrate a tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser by using nonlinear polarization rotation (NPR) technique. Exploiting the spectral filtering effect caused by the combination of the polarizer and intracavity birefringence, the wavelength separation of dual-wavelength mode-locked pulses can be flexibly tuned between 2.38 and 20.45 nm. Taking the advantage of NPR-induced intensity-dependent loss to suppress the mode competition, the stable dual-wavelength pulses output is obtained at room temperature. Moreover, the dual-wavelength switchable operation is achieved by simply rotating the polarization controllers (PCs)

  3. Study of simulations q-switching and mode-locking in Nd:YVO4 laser with Cr4+:YAG crystal

    International Nuclear Information System (INIS)

    Al-Sous, M. B.

    2007-12-01

    A numerical model of rate equations for a four-level solid-state laser with Cr 4+ :YAG saturable absorber including excited state absorption ESA is presented. The cavity is divided into a large number of disks and the model is solved for each disk and its local corresponding photon flux. The flux array is shifted for each recurrence simulating the movement of photons inside the cavity during the round trip. This simulator can describe the mode locking phenomenon and can be used to simulate the simultaneous mode locking and Q-switching with a saturable absorber.(author)

  4. Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM

    Science.gov (United States)

    Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.

    2018-04-01

    We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

  5. Real-time full-field characterization of transient dissipative soliton dynamics in a mode-locked laser

    Science.gov (United States)

    Ryczkowski, P.; Närhi, M.; Billet, C.; Merolla, J.-M.; Genty, G.; Dudley, J. M.

    2018-04-01

    Dissipative solitons are remarkably localized states of a physical system that arise from the dynamical balance between nonlinearity, dispersion and environmental energy exchange. They are the most universal form of soliton that can exist, and are seen in far-from-equilibrium systems in many fields, including chemistry, biology and physics. There has been particular interest in studying their properties in mode-locked lasers, but experiments have been limited by the inability to track the dynamical soliton evolution in real time. Here, we use simultaneous dispersive Fourier transform and time-lens measurements to completely characterize the spectral and temporal evolution of ultrashort dissipative solitons as their dynamics pass through a transient unstable regime with complex break-up and collisions before stabilization. Further insight is obtained from reconstruction of the soliton amplitude and phase and calculation of the corresponding complex-valued eigenvalue spectrum. These findings show how real-time measurements provide new insights into ultrafast transient dynamics in optics.

  6. Mode-locked thin-disk lasers and their potential application for high-power terahertz generation

    Science.gov (United States)

    Saraceno, Clara J.

    2018-04-01

    The progress achieved in the last few decades in the performance of ultrafast laser systems with high average power has been tremendous, and continues to provide momentum to new exciting applications, both in scientific research and technology. Among the various technological advances that have shaped this progress, mode-locked thin-disk oscillators have attracted significant attention as a unique technology capable of providing ultrashort pulses with high energy (tens to hundreds of microjoules) and at very high repetition rates (in the megahertz regime) from a single table-top oscillator. This technology opens the door to compact high repetition rate ultrafast sources spanning the entire electromagnetic spectrum from the XUV to the terahertz regime, opening various new application fields. In this article, we focus on their unexplored potential as compact driving sources for high average power terahertz generation.

  7. Real-time dual-comb spectroscopy with a free-running bidirectionally mode-locked fiber laser

    Science.gov (United States)

    Mehravar, S.; Norwood, R. A.; Peyghambarian, N.; Kieu, K.

    2016-06-01

    Dual-comb technique has enabled exciting applications in high resolution spectroscopy, precision distance measurements, and 3D imaging. Major advantages over traditional methods can be achieved with dual-comb technique. For example, dual-comb spectroscopy provides orders of magnitude improvement in acquisition speed over standard Fourier-transform spectroscopy while still preserving the high resolution capability. Wider adoption of the technique has, however, been hindered by the need for complex and expensive ultrafast laser systems. Here, we present a simple and robust dual-comb system that employs a free-running bidirectionally mode-locked fiber laser operating at telecommunication wavelength. Two femtosecond frequency combs (with a small difference in repetition rates) are generated from a single laser cavity to ensure mutual coherent properties and common noise cancellation. As the result, we have achieved real-time absorption spectroscopy measurements without the need for complex servo locking with accurate frequency referencing, and relatively high signal-to-noise ratio.

  8. Passive mode locking and formation of dissipative solitons in electron oscillators with a bleaching absorber in the feedback loop

    Energy Technology Data Exchange (ETDEWEB)

    Ginzburg, N. S., E-mail: ginzburg@appl.sci-nnov.ru; Kocharovskaya, E. R.; Vilkov, M. N.; Sergeev, A. S. [Russian Academy of Sciences, Institute of Applied Physics (Russian Federation)

    2017-01-15

    The mechanisms of passive mode locking and formation of ultrashort pulses in microwave electron oscillators with a bleaching absorber in the feedback loop have been analyzed. It is shown that in the group synchronism regime in which the translational velocity of particles coincides with the group velocity of the electromagnetic wave, the pulse formation can be described by the equations known in the theory of dissipative solitons. At the same time, the regimes in which the translational velocity of electrons differs from the group velocity and the soliton being formed and moving along the electron beam consecutively (cumulatively) receives energy from various electron fractions are optimal for generating pulses with the maximal peak amplitudes.

  9. Ultrafast spectral dynamics of dual-color-soliton intracavity collision in a mode-locked fiber laser

    Science.gov (United States)

    Wei, Yuan; Li, Bowen; Wei, Xiaoming; Yu, Ying; Wong, Kenneth K. Y.

    2018-02-01

    The single-shot spectral dynamics of dual-color-soliton collisions inside a mode-locked laser is experimentally and numerically investigated. By using the all-optically dispersive Fourier transform, we spectrally unveil the collision-induced soliton self-reshaping process, which features dynamic spectral fringes over the soliton main lobe, and the rebuilding of Kelly sidebands with wavelength drifting. Meanwhile, the numerical simulations validate the experimental observation and provide additional insights into the physical mechanism of the collision-induced spectral dynamics from the temporal domain perspective. It is verified that the dynamic interference between the soliton and the dispersive waves is responsible for the observed collision-induced spectral evolution. These dynamic phenomena not only demonstrate the role of dispersive waves in the sophisticated soliton interaction inside the laser cavity, but also facilitate a deeper understanding of the soliton's inherent stability.

  10. Experimental investigations of pulse shape control in passively mode-locked fiber lasers with net-normal dispersion

    International Nuclear Information System (INIS)

    Wang, L R; Han, D D

    2013-01-01

    Pulse shape control in passively mode-locked fiber lasers with net-normal dispersion is investigated experimentally. Three kinds of pulses with different spectral and temporal shapes are observed, and their pulse-shaping mechanisms are discussed. After a polarization-resolved system external to the cavity, the maximum intensity differences of the two polarization components for the rectangular-spectrum (RS), Gaussian-spectrum (GS), and super-broadband (SB) pulses are measured as ∼20 dB, ∼15 dB, and ∼1 dB, respectively. It is suggested that the equivalent saturable absorption effect plays an increasingly important role from the RS to GS and then to SB pulses in the pulse-shaping processes, while the spectral filtering effect declines. This work could help in systematically understanding pulse formation and proposing guidelines for the realization of pulses with better performance in fiber lasers. (paper)

  11. Performance Comparison of Mode-Locked Erbium-Doped Fiber Laser with Nonlinear Polarization Rotation and Saturable Absorber Approaches

    International Nuclear Information System (INIS)

    Ismail, M. A.; Tan, S. J.; Shahabuddin, N. S.; Harun, S. W.; Arof, H.; Ahmad, H.

    2012-01-01

    A mode-locked erbium-doped fiber laser (EDFL) is demonstrated using a highly concentrated erbium-doped fiber (EDF) as the gain medium in a ring configuration with and without a saturable absorber (SA). Without the SA, the proposed laser generates soliton pulses with a repetition rate of 12 MHz, pulse width of 1.11 ps and energy pulse of 1.6 pJ. By incorporating SA in the ring cavity, the optical output of the laser changes from soliton to stretched pulses due to the slight change in the group velocity dispersion. With the SA, a cleaner pulse is obtained with a repetition rate of 11.3 MHz, a pulse width of 0.58 ps and a pulse energy of 2.3 pJ. (fundamental areas of phenomenology(including applications))

  12. Optical and mode-locking properties of InGaN/GaN based hetero-structures

    International Nuclear Information System (INIS)

    Irshad, A.

    2011-01-01

    Short wavelength pulsed lasers are indispensable for high density and high speed optical data acquisition, storage and transfer applications. Passively mode-locked blue lasers are an attractive alternative for blue laser sources achieved by non-linear frequency conversion techniques. Although over the recent years it has been shown that InGaN/GaN based hetero-structures can be used as potential material for the fabrication of saturable absorbers, passive mode-locking in the blue spectral range has not been realized yet. The main reason for that is the complicated microscopic nature of InGaN/GaN materials and the difficulty to control the dynamics of photo-induced carriers which determine mode-locking properties of the material. In this work, we have characterized different InGaN based hetero-structures as potential saturable absorbers. Three different groups of the samples have been investigated: i) quantum well samples with different numbers of quantum wells grown under optimal conditions; ii)quantum well samples with modified optical properties due to different buffer layer thickness and postgrowth treatment; iii) a multilayered quantum dot sample. The characterized quantum well samples exhibit relatively high optical quality and sufficiently high saturable losses (which can be controlled by alternating a number of the quantum wells). Nevertheless, they have two major disadvantages as saturable absorbers, namely, a very long absorption recovery time (in the order of a few nanoseconds) and a rather high saturation fluence. The long recovery times are not desirable for achieving a stable and self-starting mode-locking without Q-switching. In order to understand the relaxation processes of photo-induced carriers that determine the absorption recovery times of the saturable absorbers, optical properties of the hetero-structures have been extensively studied by using the frequency and time resolved photo-luminescence technique. The obtained data reveal that, directly

  13. Frequency modulation of semiconductor disk laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

    2015-07-31

    A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

  14. Tuning the band gap in hybrid tin iodide perovskite semiconductors using structural templating.

    Science.gov (United States)

    Knutson, Jeremy L; Martin, James D; Mitzi, David B

    2005-06-27

    Structural distortions within the extensive family of organic/inorganic hybrid tin iodide perovskite semiconductors are correlated with their experimental exciton energies and calculated band gaps. The extent of the in- and out-of-plane angular distortion of the SnI4(2-) perovskite sheets is largely determined by the relative charge density and steric requirements of the organic cations. Variation of the in-plane Sn-I-Sn bond angle was demonstrated to have the greatest impact on the tuning of the band gap, and the equatorial Sn-I bond distances have a significant secondary influence. Extended Hückel tight-binding band calculations are employed to decipher the crystal orbital origins of the structural effects that fine-tune the band structure. The calculations suggest that it may be possible to tune the band gap by as much as 1 eV using the templating influence of the organic cation.

  15. Observation of phase noise reduction in photonically synthesized sub-THz signals using a passively mode-locked laser diode and highly selective optical filtering

    DEFF Research Database (Denmark)

    Criado, A. R.; Acedo, P.; Carpintero, G.

    2012-01-01

    A Continuous Wave (CW) sub-THz photonic synthesis setup based on a single Passively Mode-Locked Laser Diode (PMLLD) acting as a monolithic Optical Frequency Comb Generator (OFCG) and highly selective optical filtering has been implemented to evaluate the phase noise performance of the generated sub...

  16. 1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range

    Energy Technology Data Exchange (ETDEWEB)

    Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de; Arsenijević, D.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin (Germany); Franke, D.; Kreissl, J.; Künzel, H. [Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin (Germany)

    2015-01-19

    Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 to 300 mA leads to 30 MHz frequency tuning.

  17. 1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range

    International Nuclear Information System (INIS)

    Sadeev, T.; Arsenijević, D.; Bimberg, D.; Franke, D.; Kreissl, J.; Künzel, H.

    2015-01-01

    Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 to 300 mA leads to 30 MHz frequency tuning

  18. Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm.

    Science.gov (United States)

    Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther

    2017-07-01

    We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20  dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7  nm (full width at -20  dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100  Hz 2 /Hz and of at most 170  Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.

  19. Passively Q-switched mode-locked Nd3+:LuVO4 laser by LT-GaAs saturable absorber

    International Nuclear Information System (INIS)

    Li, M; Zhao, S; Li, Y; Yang, K; Li, G; Li, D; An, J; Li, T; Yu, Z

    2009-01-01

    By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the passively Q-switched pulse envelops ranges from 37.5 to 139 kHz as the pump power increased from 1.7 to 8.2 W. The mode-locked pulse inside the Q-switched envelop has an estimated pulse width of about 220 ps and a repetition rate of 111 MHz. Under an incident pump power of 8.2 W, the highest pulse energy of 6 μJ of each Q-switched envelope, and the highest peak power about 2.73 kW of Q-switched mode-locked pulses can be obtained

  20. An asymmetric integrated extended cavity 20GHz mode-locked quantum well ring laser fabricated in the JePPIX technology platform

    NARCIS (Netherlands)

    Tahvili, M.S.; Barbarin, Y.; Ambrosius, H.P.M.M.; Smit, M.K.; Bente, E.A.J.M.; Leijtens, X.J.M.; Vries, de T.; Smalbrugge, E.; Bolk, J.

    2011-01-01

    In this paper, we present mode-locked operation of a monolithic 20GHz integrated extended cavity ring laser. The 4mm-long laser ring cavity incorporates a 750µm-long optical amplifier section (SOA), a separate 40µm long saturable absorber (SA) section, passive waveguide sections (shallow and deep

  1. Photocatalytic Hybrid Semiconductor-Metal Nanoparticles; from Synergistic Properties to Emerging Applications.

    Science.gov (United States)

    Waiskopf, Nir; Ben-Shahar, Yuval; Banin, Uri

    2018-04-14

    Hybrid semiconductor-metal nanoparticles (HNPs) manifest unique combined and often synergetic properties stemming from the materials combination. These structures exhibit spatial charge separation across the semiconductor-metal junction upon light absorption, enabling their use as photocatalysts. So far, the main impetus of photocatalysis research in HNPs addresses their functionality in solar fuel generation. Recently, it was discovered that HNPs are functional in efficient photocatalytic generation of reactive oxygen species (ROS). This has opened the path for their implementation in diverse biomedical and industrial applications where high spatially temporally resolved ROS formation is essential. Here, the latest studies on the synergistic characteristics of HNPs are summarized, including their optical, electrical, and chemical properties and their photocatalytic function in the field of solar fuel generation is briefly discussed. Recent studies are then focused concerning photocatalytic ROS formation with HNPs under aerobic conditions. The emergent applications of this capacity are then highlighted, including light-induced modulation of enzymatic activity, photodynamic therapy, antifouling, wound healing, and as novel photoinitiators for 3D-printing. The superb photophysical and photocatalytic properties of HNPs offer already clear advantages for their utility in scenarios requiring on-demand light-induced radical formation and the full potential of HNPs in this context is yet to be revealed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Nonlinear Polarization Rotation-Based Mode-Locked Erbium-Doped Fiber Laser with Three Switchable Operation States

    International Nuclear Information System (INIS)

    Tiu Zian Cheak; Tan Sin Jin; Zarei Arman; Ahmad Harith; Harun Sulaiman Wadi

    2014-01-01

    A simple mode-locked erbium-doped fiber laser (EDFL) with three switchable operation states is proposed and demonstrated based on nonlinear polarization rotation. The EDFL generates a stable square pulse at a third harmonic pulse repetition rate of 87 kHz as the 1480 nm pump power increases from the threshold of 17.5 mW to 34.3 mW. The square pulse duration increases from 105 ns to 245 ns as the pump power increases within this region. The pulse operation switches to the second operation state as the pump power is varied from 48.2 mW to 116.7 mW. The laser operates at a fundamental repetition rate of 29 kHz with a fixed pulse width of 8.5 μs within the pump power region. At a pump power of 116.7 mW, the average output power is 3.84 mW, which corresponds to the pulse energy of 131.5 nJ. When the pump power continues to increase, the pulse train experiences unstable oscillation before it reaches the third stable operation state within a pump power region of 138.9 mW to 145.0 mW. Within this region, the EDFL produces a fixed pulse width of 2.8 μs and a harmonic pulse repetition rate of 58 kHz. (fundamental areas of phenomenology(including applications))

  3. Unidirectional, dual-comb lasing under multiple pulse formation mechanisms in a passively mode-locked fiber ring laser

    Science.gov (United States)

    Liu, Ya; Zhao, Xin; Hu, Guoqing; Li, Cui; Zhao, Bofeng; Zheng, Zheng

    2016-09-01

    Dual-comb lasers from which asynchronous ultrashort pulses can be simultaneously generated have recently become an interesting research subject. They could be an intriguing alternative to the current dual-laser optical-frequency-comb source with highly sophisticated electronic control systems. If generated through a common light path traveled by all pulses, the common-mode noises between the spectral lines of different pulse trains could be significantly reduced. Therefore, coherent dual-comb generation from a completely common-path, unidirectional lasing cavity would be an interesting territory to explore. In this paper, we demonstrate such a dual-comb lasing scheme based on a nanomaterial saturable absorber with additional pulse narrowing and broadening mechanisms concurrently introduced into a mode-locked fiber laser. The interactions between multiple soliton formation mechanisms result in unusual bifurcation into two-pulse states with quite different characteristics. Simultaneous oscillation of pulses with four-fold difference in pulsewidths and tens of Hz repetition rate difference is observed. The coherence between these spectral-overlapped, picosecond and femtosecond pulses is further verified by the corresponding asynchronous cross-sampling and dual-comb spectroscopy measurements.

  4. Observation of stable bound soliton with dual-wavelength in a passively mode-locked Er-doped fiber laser

    International Nuclear Information System (INIS)

    Zheng Yu; Tian Jin-Rong; Dong Zi-Kai; Xu Run-Qin; Li Ke-Xuan; Song Yan-Rong

    2017-01-01

    A phase-locked bound state soliton with dual-wavelength is observed experimentally in a passively mode-locked Er-doped fiber (EDF) laser with a fiber loop mirror (FLM). The pulse duration of the soliton is 15 ps and the peak-to-peak separation is 125 ps. The repetition rate of the pulse sequence is 3.47 MHz. The output power is 11.8 mW at the pump power of 128 mW, corresponding to the pulse energy of 1.52 nJ. The FLM with a polarization controller can produce a comb spectrum, which acts as a filter. By adjusting the polarization controller or varying the pump power, the central wavelength of the comb spectrum can be tuned. When it combines with the reflective spectrum of the fiber Bragg grating, the total spectrum of the cavity can be cleaved into two parts, then the bound state soliton with dual-wavelength at 1549.7 nm and 1550.4 nm is obtained. (paper)

  5. Visualization of hair follicles using high-speed optical coherence tomography based on a Fourier domain mode locking laser

    Science.gov (United States)

    Tsai, M.-T.; Chang, F.-Y.

    2012-04-01

    In this study, a swept-source optical coherence tomography (SS-OCT) system with a Fourier domain mode locking (FDML) laser is proposed for a dermatology study. The homemade FDML laser is one kind of frequency-sweeping light source, which can provide output power of >20 mW and an output spectrum of 65 nm in bandwidth centered at 1300 nm, enabling imaging with an axial resolution of 12 μm in the OCT system. To eliminate the forward scans from the laser output and insert the delayed backward scans, a Mach-Zehnder configuration is implemented. Compared with conventional frequency-sweeping light sources, the FDML laser can achieve much higher scan rates, as high as ˜240 kHz, which can provide a three-dimensional imaging rate of 4 volumes/s. Furthermore, the proposed high-speed SS-OCT system can provide three-dimensional (3D) images with reduced motion artifacts. Finally, a high-speed SS-OCT system is used to visualize hair follicles, demonstrating the potential of this technology as a tool for noninvasive diagnosis of alopecia.

  6. Generation of Q-Switched Mode-Locked Erbium-Doped Fiber Laser Operating in Dark Regime

    International Nuclear Information System (INIS)

    Tiu, Zian Cheak; Zarei, Arman; Ahmad, Harith; Harun, Sulaiman Wadi

    2016-01-01

    We demonstrate a stable Q-switched mode-locked erbium-doped fiber laser (EDFL) operating in dark regime based on the nonlinear polarization rotation technique. The EDFL produces a pulse train where the Q-switching envelope is formed by multiple dark pulses. The repetition rate of the Q-switched envelope can be increased from 0.96 kHz to 3.26 kHz, whereas the pulse width reduces from 211 μs to 86 μs. The highest pulse of 479 nJ is obtained at the pump power of 55 mW. It is also observed that the dark pulses inside the Q-switching envelope consist of two parts: square and trailing dark pulses. The shortest pulse width of the dark square pulse is obtained at 40.5 μs when the pump power is fixed at 145 mW. The repetition rate of trailing dark pulses can be increased from 27.62 kHz to 50 kHz as the pump power increases from 55 mW to 145 mW. (paper)

  7. Design and evaluation of modelocked semiconductor lasers for low noise and high stability

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2005-01-01

    We present work on design of monolithic mode-locked semiconductor lasers with focus on the gain medium. The use of highly inverted quantum wells in a low-loss waveguide enables both low quantum noise, low-chirped pulses and a large stability region. Broadband noise measurements are performed...

  8. A hybrid, broadband, low noise charge preamplifier for simultaneous high resolution energy and time information with large capacitance semiconductor detector

    International Nuclear Information System (INIS)

    Goyot, M.

    1975-05-01

    A broadband and low noise charge preamplifier was developed in hybrid form, for a recoil spectrometer requiring large capacitance semiconductor detectors. This new hybrid and low cost preamplifier permits good timing information without compromising energy resolution. With a 500 pF external input capacity, it provides two simultaneous outputs: (i) the faster, current sensitive, with a rise time of 9 nsec and 2 mV/MeV on 50 ohms load, (ii) the lower, charge sensitive, with an energy resolution of 14 keV (FWHM Si) using a RC-CR ungated filter of 2 μsec and a FET input protection [fr

  9. Photocatalytic oxidation of organic compounds in a hybrid system composed of a molecular catalyst and visible light-absorbing semiconductor.

    Science.gov (United States)

    Zhou, Xu; Li, Fei; Li, Xiaona; Li, Hua; Wang, Yong; Sun, Licheng

    2015-01-14

    Photocatalytic oxidation of organic compounds proceeded efficiently in a hybrid system with ruthenium aqua complexes as catalysts, BiVO4 as a light absorber, [Co(NH3)5Cl](2+) as a sacrificial electron acceptor and water as an oxygen source. The photogenerated holes in the semiconductor are used to oxidize molecular catalysts into the high-valent Ru(IV)=O intermediates for 2e(-) oxidation.

  10. Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber

    International Nuclear Information System (INIS)

    Li, T; Zhao, S; Li, Y; Zhuo, Z; Yang, K; Li, G; Li, D; Yu, Z

    2009-01-01

    A diode pumped passively mode-locked Nd:LuVO 4 laser with a low temperature (LT) In 0.25 Ga 0.75 As absorber is realized in this paper. An In 0.25 Ga 0.75 As single-quantum-well absorber, which is grown by use of the metal-organic chemical-vapor deposition technique, acts as nonlinear absorber and output coupler simultaneously. A special cavity is designed to keep the power density on In 0.25 Ga 0.75 As under its damage threshold. Both the Q-switched and continuous-wave (cw) mode locking operation are experimentally realized. An average output power of 5.9 W with pulse width of 4.9 ps is achieved at the pump power of 22 W, corresponding to an optical conversion efficiency of 26.8%

  11. Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

    Science.gov (United States)

    Dyksik, Mateusz; Motyka, Marcin; Kurka, Marcin; Ryczko, Krzysztof; Misiewicz, Jan; Schade, Anne; Kamp, Martin; Höfling, Sven; Sęk, Grzegorz

    2017-11-01

    Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.

  12. Asymmetric dual-loop feedback to suppress spurious tones and reduce timing jitter in self-mode-locked quantum-dash lasers emitting at 155 μm

    Science.gov (United States)

    Asghar, Haroon; McInerney, John G.

    2017-09-01

    We demonstrate an asymmetric dual-loop feedback scheme to suppress external cavity side-modes induced in self-mode-locked quantum-dash lasers with conventional single and dual-loop feedback. In this letter, we achieved optimal suppression of spurious tones by optimizing the length of second delay time. We observed that asymmetric dual-loop feedback, with large (~8x) disparity in cavity lengths, eliminates all external-cavity side-modes and produces flat RF spectra close to the main peak with low timing jitter compared to single-loop feedback. Significant reduction in RF linewidth and reduced timing jitter was also observed as a function of increased second feedback delay time. The experimental results based on this feedback configuration validate predictions of recently published numerical simulations. This interesting asymmetric dual-loop feedback scheme provides simplest, efficient and cost effective stabilization of side-band free optoelectronic oscillators based on mode-locked lasers.

  13. Passive mode-locking of 3.25μm GaSb-based type-I quantum-well cascade diode lasers

    Science.gov (United States)

    Feng, Tao; Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi; Wang, Meng; Belenky, Gregory

    2018-02-01

    Passively mode-locked type-I quantum well cascade diode lasers emitting in the methane absorption band near 3.25 μm were designed, fabricated and characterized. The deep etched 5.5-μm-wide single spatial mode ridge waveguide design utilizing split-contact architecture was implemented. The devices with absorber to gain section length ratios of 11% and 5.5% were studied. Lasers with the longer absorber section ( 300 μm) generated smooth bell-shape-like emission spectrum with about 30 lasing modes at full-width-at-half-maximum level. Devices with reverse biased absorber section demonstrated stable radio frequency beat with nearly perfect Lorentzian shape over four orders of magnitude of intensity. The estimated pulse-to-pulse timing jitter was about 110 fs/cycle. Laser generated average power of more than 1 mW in mode-locked regime.

  14. Soliton rains in a graphene-oxide passively mode-locked ytterbium-doped fiber laser with all-normal dispersion

    International Nuclear Information System (INIS)

    Huang, S S; Yan, P G; Zhang, G L; Zhao, J Q; Li, H Q; Lin, R Y; Wang, Y G

    2014-01-01

    We experimentally investigated soliton rains in an ytterbium-doped fiber (YDF) laser with a net normal dispersion cavity using a graphene-oxide (GO) saturable absorber (SA). The 195 m-long-cavity, the fiber birefringence filter and the inserted 2.5 nm narrow bandwidth filter play important roles in the formation of the soliton rains. The soliton rain states can be changed by the effective gain bandwidth of the laser. The experimental results can be conducive to an understanding of dissipative soliton features and mode-locking dynamics in all-normal dispersion fiber lasers with GOSAs. To the best of our knowledge, this is the first demonstration of soliton rains in a GOSA passively mode-locked YDF laser with a net normal dispersion cavity. (letter)

  15. Generation of 103 fs mode-locked pulses by a gain linewidth-variable Nd,Y:CaF2 disordered crystal.

    Science.gov (United States)

    Qin, Z P; Xie, G Q; Ma, J; Ge, W Y; Yuan, P; Qian, L J; Su, L B; Jiang, D P; Ma, F K; Zhang, Q; Cao, Y X; Xu, J

    2014-04-01

    We have demonstrated a diode-pumped passively mode-locked femtosecond Nd,Y:CaF2 disordered crystal laser for the first time to our knowledge. By choosing appropriate Y-doping concentration, a broad fluorescence linewidth of 31 nm has been obtained from the gain linewidth-variable Nd,Y:CaF2 crystal. With the Nd,Y:CaF2 disordered crystal as gain medium, the mode-locked laser generated pulses with pulse duration as short as 103 fs, average output power of 89 mW, and repetition rate of 100 MHz. To our best knowledge, this is the shortest pulse generated from Nd-doped crystal lasers so far. The research results show that the Nd,Y:CaF2 disordered crystal will be a potential alternative as gain medium of repetitive chirped pulse amplification for high-peak-power lasers.

  16. Characterisation of the light pulses of a cavity dumped dye laser pumped by a cw mode-locked and q-switched Nd:YAG laser

    International Nuclear Information System (INIS)

    Geist, P.; Heisel, F.; Martz, A.; Miehe, J.A.; Miller, R.J.D.

    1984-01-01

    The frequency doubled pulses (of 532 nm) obtained, with the help of a KTP crystal, from those delivered by either a continuous wave mode-locked (100 MHz) or mode-locked Q-switched (0-1 KHz) Nd: YAG laser, are analyzed by means of a streak camera, operating in synchroscan or triggered mode. In the step-by-step measurements the pulse stability, concerning form and amplitude, is shown. In addition, measurements effectuated with synchronously pumped and cavity dumped dye laser (Rhodamine 6G), controlled by a Pockels cell, allows the obtention of stable and reproducible single pulses of 30 ps duration, 10 μJ energy and 500Hz frequency [fr

  17. Comparative Study of the Photocatalytic Activity of Semiconductor Nanostructures and Their Hybrid Metal Nanocomposites on the Photodegradation of Malathion

    Directory of Open Access Journals (Sweden)

    Dina Mamdouh Fouad

    2012-01-01

    Full Text Available This work is devoted to synthesize different semiconductor nanoparticles and their metal-hybrid nanocomposites such as TiO2, Au/TiO2, ZnO, and Au/ZnO. The morphology and crystal structure of the prepared nanomaterials are characterized by the TEM and XRD, respectively. These materials are used as catalysts for the photodegradation of Malathion which is one of the most commonly used pesticides in the developing countries. The degradation of 10 ppm Malathion under ultraviolet (UV and visible light in the presence of the different synthesized nanocomposites was analyzed with high-performance liquid chromatography (HPLC and UV-Visible Spectra. A comprehensive study is carried out for the catalytic efficiency of the prepared nanoparticles. Different factors influencing the catalytic photodegradation are investigated, as different light source, surface coverage, and nature of the organic contaminants. The results indicate that hybrid nanocomposite of the semiconductor-metal hybrid serves as a better catalytic system compared with semiconductor nanoparticles themselves.

  18. Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

    Science.gov (United States)

    Lee, F. C.; Chen, D. Y.; Jovanovic, M.; Hopkins, D. C.

    1985-01-01

    The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

  19. Tungsten polyoxometalate molecules as active nodes for dynamic carrier exchange in hybrid molecular/semiconductor capacitors

    International Nuclear Information System (INIS)

    Balliou, A.; Douvas, A. M.; Normand, P.; Argitis, P.; Glezos, N.; Tsikritzis, D.; Kennou, S.

    2014-01-01

    In this work we study the utilization of molecular transition metal oxides known as polyoxometalates (POMs), in particular the Keggin structure anions of the formula PW 12 O 40 3− , as active nodes for potential switching and/or fast writing memory applications. The active molecules are being integrated in hybrid Metal-Insulator/POM molecules-Semiconductor capacitors, which serve as prototypes allowing investigation of critical performance characteristics towards the design of more sophisticated devices. The charging ability as well as the electronic structure of the molecular layer is probed by means of electrical characterization, namely, capacitance-voltage and current-voltage measurements, as well as transient capacitance measurements, C (t), under step voltage polarization. It is argued that the transient current peaks observed are manifestations of dynamic carrier exchange between the gate electrode and specific molecular levels, while the transient C (t) curves under conditions of molecular charging can supply information for the rate of change of the charge that is being trapped and de-trapped within the molecular layer. Structural characterization via surface and cross sectional scanning electron microscopy as well as atomic force microscopy, spectroscopic ellipsometry, UV and Fourier-transform IR spectroscopies, UPS, and XPS contribute to the extraction of accurate electronic structure characteristics and open the path for the design of new devices with on-demand tuning of their interfacial properties via the controlled preparation of the POM layer.

  20. Optical response of hybrid semiconductor quantum dot-metal nanoparticle system: Beyond the dipole approximation

    Science.gov (United States)

    Mohammadzadeh, Atefeh; Miri, MirFaez

    2018-01-01

    We study the response of a semiconductor quantum dot-metal nanoparticle system to an external field E 0 cos ( ω t ) . The borders between Fano, double peaks, weak transition, strong transition, and bistability regions of the phase diagram move considerably as one regards the multipole effects. The exciton-induced transparency is an artifact of the dipole approximation. The absorption of the nanoparticle, the population inversion of the quantum dot, the upper and lower limits of intensity where bistability occurs, the characteristic time to reach the steady state, and other features of the hybrid system change due to the multipole effects. The phase diagrams corresponding to the fields parallel and perpendicular to the axis of system are quite distinguishable. Thus, both the intensity and the polarization of the incident field can be used to control the system. In particular, the incident polarization can be used to switch on and switch off the bistable behavior. For applications such as miniaturized bistable devices and nanosensors sensitive to variations of the dielectric constant of the surrounding medium, multipole effects must be considered.

  1. Uniform spacing interrogation of a Fourier domain mode-locked fiber Bragg grating sensor system using a polarization-maintaining fiber Sagnac interferometer

    OpenAIRE

    Lee, Hwi Don; Jung, Eun Joo; Jeong, Myung Yung; Chen, Zhongping; Kim, Chang-Seok

    2013-01-01

    A novel linearized interrogation method is presented for a Fourier domain mode-locked (FDML) fiber Bragg grating (FBG) sensor system. In a high speed regime over several tens of kHz modulations, a sinusoidal wave is available to scan the center wavelength of an FDML wavelength-swept laser, instead of a conventional triangular wave. However, sinusoidal wave modulation suffers from an exaggerated non-uniform wavelength-spacing response in demodulating the time-encoded parameter to the absolute ...

  2. Dynamical modeling and experiment for an intra-cavity optical parametric oscillator pumped by a Q-switched self-mode-locking laser

    Science.gov (United States)

    Wang, Jing; Liu, Nianqiao; Song, Peng; Zhang, Haikun

    2016-11-01

    The rate-equation-based model for the Q-switched mode-locking (QML) intra-cavity OPO (IOPO) is developed, which includes the behavior of the fundamental laser. The intensity fluctuation mechanism of the fundamental laser is first introduced into the dynamics of a mode-locking OPO. In the derived model, the OPO nonlinear conversion is considered as a loss for the fundamental laser and thus the QML signal profile originates from the QML fundamental laser. The rate equations are solved by a digital computer for the case of an IOPO pumped by an electro-optic (EO) Q-switched self-mode-locking fundamental laser. The simulated results for the temporal shape with 20 kHz EO repetition and 11.25 W pump power, the signal average power, the Q-switched pulsewidth and the Q-switched pulse energy are obtained from the rate equations. The signal trace and output power from an EO QML Nd3+: GdVO4/KTA IOPO are experimentally measured. The theoretical values from the rate equations agree with the experimental results well. The developed model explains the behavior, which is helpful to system optimization.

  3. Effects of multiple resistive shells and transient electromagnetic torque on the dynamics of mode locking in reversed field pinch plasmas

    International Nuclear Information System (INIS)

    Guo, S.C.; Chu, M.S.

    2002-01-01

    The effects of multiple resistive shells and transient electromagnetic torque on the dynamics of mode locking in the reversed field pinch (RFP) plasmas are studied. Most RFP machines are equipped with one or more metal shells outside of the vacuum vessel. These shells have finite resistivities. The eddy currents induced in each of the shells contribute to the braking electromagnetic (EM) torque which slows down the plasma rotation. In this work we study the electromagnetic torque acting on the plasma (tearing) modes produced by a system of resistive shells. These shells may consist of several nested thin shells or several thin shells enclosed within a thick shell. The dynamics of the plasma mode is investigated by balancing the EM torque from the resistive shells with the plasma viscous torque. Both the steady state theory and the time-dependent theory are developed. The steady state theory is shown to provide an accurate account of the resultant EM torque if (dω/dt)ω -2 <<1 and the time scale of interest is much longer than the response (L/R) time of the shell. Otherwise, the transient theory should be adopted. As applications, the steady state theory is used to evaluate the changes of the EM torque response from the resistive shells in two variants of two RFP machines: (1) modification from Reversed Field Experiment (RFX) [Gnesotto et al., Fusion Eng. Des. 25, 335 (1995)] to the modified RFX: both of them are equipped with one thin shell plus one thick shell; (2) modification from Extrap T2 to Extrap T2R [Brunsell et al., Plasma Phys. Controlled Fusion 43, 1457 (2001)]: both of them are equipped with two thin shells. The transient theory has been applied numerically to study the time evolution of the EM torque during the unlocking of a locked tearing mode in the modified RFX

  4. Nanoscale charcoal powder induced saturable absorption and mode-locking of a low-gain erbium-doped fiber-ring laser

    International Nuclear Information System (INIS)

    Lin, Yung-Hsiang; Chi, Yu-Chieh; Lin, Gong-Ru

    2013-01-01

    Triturated charcoal nano-powder directly brushed on a fiber connector end-face is used for the first time as a fast saturable absorber for a passively mode-locked erbium-doped fiber-ring laser (EDFL). These dispersant-free charcoal nano-powders with a small amount of crystalline graphene phase and highly disordered carbon structure exhibit a broadened x-ray diffraction peak and their Raman spectrum shows the existence of a carbon related D-band at 1350 cm −1 and the disappearance of the 2D-band peak at 2700 cm −1 . The charcoal nano-powder exhibits a featureless linear absorbance in the infrared region with its linear transmittance of 0.66 nonlinearly saturated at 0.73 to give a ΔT/T of 10%. Picosecond mode-locking at a transform-limited condition of a low-gain EDFL is obtained by using the charcoal nano-powder. By using a commercial EDFA with a linear gain of only 17 dB at the saturated output power of 17.5 dB m required to initiate the saturable absorption of the charcoal nano-powder, the EDFL provides a pulsewidth narrowing from 3.3 to 1.36 ps associated with its spectral linewidth broadening from 0.8 to 1.83 nm on increasing the feedback ratio from 30 to 90%. This investigation indicates that all the carbon-based materials containing a crystalline graphene phase can be employed to passively mode-lock the EDFL, however, the disordered carbon structure inevitably induces a small modulation depth and a large mode-locking threshold, thus limiting the pulsewidth shortening. Nevertheless, the nanoscale charcoal passively mode-locked EDFL still shows the potential to generate picosecond pulses under a relatively low cavity gain. An appropriate cavity design can be used to compensate this defect-induced pulsewidth limitation and obtain a short pulsewidth. (letter)

  5. Passive mode locking of 2.09 microm Cr,Tm,Ho:Y3Sc2Al3O12 laser using PbS quantum-dot-doped glass.

    Science.gov (United States)

    Denisov, Igor A; Skoptsov, Nikolai A; Gaponenko, Maxim S; Malyarevich, Alexander M; Yumashev, Konstantin V; Lipovskii, Andrei A

    2009-11-01

    Passive Q-switched mode locking of a 2.09 microm flashlamp-pumped Cr(3+),Tm(3+),Ho(3+):Y(3)Sc(2)Al(3)O(12) laser by use of a phosphate glass doped with PbS quantum dots of 5 nm in radius was demonstrated. Mode-locked pulses of 290 ps in duration and up to 0.5 mJ in energy were registered.

  6. Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures

    Directory of Open Access Journals (Sweden)

    Jacky Even

    2014-01-01

    Full Text Available Potentialities of density functional theory (DFT based methodologies are explored for photovoltaic materials through the modeling of the structural and optoelectronic properties of semiconductor hybrid organic-inorganic perovskites and GaAs/GaP heterostructures. They show how the properties of these bulk materials, as well as atomistic relaxations, interfaces, and electronic band-lineups in small heterostructures, can be thoroughly investigated. Some limitations of available standard DFT codes are discussed. Recent improvements able to treat many-body effects or based on density-functional perturbation theory are also reviewed in the context of issues relevant to photovoltaic technologies.

  7. Detection of secondary electrons with pixelated hybrid semiconductor detectors; Sekundaerelektronennachweis mit pixelierten hybriden Halbleiterdetektoren

    Energy Technology Data Exchange (ETDEWEB)

    Gebert, Ulrike Sonja

    2011-09-14

    Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10{sup -5} mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm{sup 2} area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm{sup 2}. To achieve this, a new photocathode was mounted in a shorter distance to the detector. The

  8. The simultaneous generation of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a graphene saturable absorber

    Science.gov (United States)

    Wang, Zhenhong; Wang, Zhi; Liu, Yan-ge; He, Ruijing; Wang, Guangdou; Yang, Guang; Han, Simeng

    2018-05-01

    We experimentally report the coexistence of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a microfiber-based graphene saturable absorber. The soliton bunches, like isolated spikes with extreme amplitude and ultrashort duration, randomly generate in the background of the Q-switched-like pulses. The soliton bunches have some pulse envelopes in which pulses operate at a fundamental repetition rate in the temporal domain. Further investigation shows that the composite pulses are highly correlated with the noise-like pulses. Our work can make a further contribution to enrich the understanding of the nonlinear dynamics in fiber lasers.

  9. Crafting semiconductor organic-inorganic nanocomposites via placing conjugated polymers in intimate contact with nanocrystals for hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Lei; Lin, Zhiqun [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA (United States)

    2012-08-22

    Semiconductor organic-inorganic hybrid solar cells incorporating conjugated polymers (CPs) and nanocrystals (NCs) offer the potential to deliver efficient energy conversion with low-cost fabrication. The CP-based photovoltaic devices are complimented by an extensive set of advantageous characteristics from CPs and NCs, such as lightweight, flexibility, and solution-processability of CPs, combined with high electron mobility and size-dependent optical properties of NCs. Recent research has witnessed rapid advances in an emerging field of directly tethering CPs on the NC surface to yield an intimately contacted CP-NC nanocomposite possessing a well-defined interface that markedly promotes the dispersion of NCs within the CP matrix, facilitates the photoinduced charge transfer between these two semiconductor components, and provides an effective platform for studying the interfacial charge separation and transport. In this Review, we aim to highlight the recent developments in CP-NC nanocomposite materials, critically examine the viable preparative strategies geared to craft intimate CP-NC nanocomposites and their photovoltaic performance in hybrid solar cells, and finally provide an outlook for future directions of this extraordinarily rich field. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Mode-locking peculiarities in an all-fiber erbium-doped ring ultrashort pulse laser with a highly-nonlinear resonator

    Science.gov (United States)

    Dvoretskiy, Dmitriy A.; Sazonkin, Stanislav G.; Kudelin, Igor S.; Orekhov, Ilya O.; Pnev, Alexey B.; Karasik, Valeriy E.; Denisov, Lev K.

    2017-12-01

    Today ultrashort pulse (USP) fiber lasers are in great demand in a frequency metrology field, THz pulse spectroscopy, optical communication, quantum optics application, etc. Therefore mode-locked (ML) fiber lasers have been extensively investigated over the last decade due the number of scientific, medical and industrial applications. It should be noted, that USP fiber lasers can be treated as an ideal platform to expand future applications due to the complex ML nonlinear dynamics in a laser resonator. Up to now a series of novel ML regimes have been investigated e.g. self-similar pulses, noise-like pulses, multi-bound solitons and soliton rain generation. Recently, we have used a highly nonlinear germanosilicate fiber (with germanium oxides concentration in the core 50 mol. %) inside the resonator for more reliable and robust launching of passive mode-locking based on the nonlinear polarization evolution effect in fibers. In this work we have measured promising and stable ML regimes such as stretched pulses, soliton rain and multi-bound solitons formed in a highly-nonlinear ring laser and obtained by intracavity group velocity dispersion (GVD) variation in slightly negative region. As a result, we have obtained the low noise ultrashort pulse generation with duration 59 dB) and relative intensity noise <-101 dBc / Hz.

  11. Mode-locked Er-doped fiber laser based on PbS/CdS core/shell quantum dots as saturable absorber.

    Science.gov (United States)

    Ming, Na; Tao, Shina; Yang, Wenqing; Chen, Qingyun; Sun, Ruyi; Wang, Chang; Wang, Shuyun; Man, Baoyuan; Zhang, Huanian

    2018-04-02

    Previously, PbS/CdS core/shell quantum dots with excellent optical properties have been widely used as light-harvesting materials in solar cell and biomarkers in bio-medicine. However, the nonlinear absorption characteristics of PbS/CdS core/shell quantum dots have been rarely investigated. In this work, PbS/CdS core/shell quantum dots were successfully employed as nonlinear saturable absorber (SA) for demonstrating a mode-locked Er-doped fiber laser. Based on a film-type SA, which was prepared by incorporating the quantum dots with the polyvinyl alcohol (PVA), mode-locked Er-doped operation with a pulse width of 54 ps and a maximum average output power of 2.71 mW at the repetition rate of 3.302 MHz was obtained. Our long-time stable results indicate that the CdS shell can effectively protect the PbS core from the effect of photo-oxidation and PbS/CdS core/shell quantum dots were efficient SA candidates for demonstrating pulse fiber lasers due to its tunable absorption peak and excellent saturable absorption properties.

  12. Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

    Directory of Open Access Journals (Sweden)

    Malik Kemiche

    2018-01-01

    Full Text Available We exploit slow light (high ng modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28, this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate of the pulsed laser signal.

  13. Design optimization of a compact photonic crystal microcavity based on slow light and dispersion engineering for the miniaturization of integrated mode-locked lasers

    Science.gov (United States)

    Kemiche, Malik; Lhuillier, Jérémy; Callard, Ségolène; Monat, Christelle

    2018-01-01

    We exploit slow light (high ng) modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28), this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate) of the pulsed laser signal.

  14. Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm

    Science.gov (United States)

    Prziwarka, T.; Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Weyers, M.; Knigge, A.; Tränkle, G.

    2018-02-01

    Monolithic laser diodes which generate short infrared pulses in the picosecond and sub-picosecond ranges with high peak power are ideal sources for many applications like e.g. THz-time-domain spectroscopy (TDS) scanning systems. The achievable THz bandwidth is limited by the length of the optical pulses. Due to the fact that colliding-pulse mode locking (CPM) leads to the shortest pulses which could reached by passive mode locking, we experimentally investigated in detail the dynamical and electro optical performance of InGaAsP based quantum well CPM laser diodes with well-established vertical layer structures. Simple design modifications whose implementation is technically easy were realized. Improvements of the device performance in terms of pulse duration, output power, and noise properties are presented in dependence on the different adaptions. From the results we extract an optimized configuration with which we have reached pulses with durations of ≍1.5 ps, a peak power of > 1 W and a pulse-to-pulse timing jitter < 200 fs. The laser diodes emit pulses at a wavelength around 850 nm with a repetition frequency of ≍ 12.4 GHz and could be used as pump source for GaAs antennas to generate THz-radiation. Approaches for reducing pulse width, increasing output power, and improving noise performance are described.

  15. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    Energy Technology Data Exchange (ETDEWEB)

    Gadzhiyev, I. M., E-mail: idris.intop@mail.ru; Buyalo, M. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Gubenko, A. E. [Innolume GmbH (Germany); Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

  16. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    International Nuclear Information System (INIS)

    Gadzhiyev, I. M.; Buyalo, M. S.; Gubenko, A. E.; Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L.

    2016-01-01

    The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

  17. Effect of beam expansion loss in a carbon nanotube-doped PVA film on passively mode-locked erbium-doped fiber lasers with different feedback ratios

    International Nuclear Information System (INIS)

    Cheng, Kuang-Nan; Chi, Yu-Chieh; Cheng, Chih-Hsien; Lin, Yung-Hsiang; Lo, Jui-Yung; Lin, Gong-Ru

    2014-01-01

    The effect of beam expansion induced divergent loss in a single-wall carbon nanotube (SWCNT) doped polyvinyl alcohol (PVA) based ultrafast saturable absorber (SA) film thickness on the passive mode-locking (PML) performances of erbium-doped fiber lasers are demonstrated. The variation on the PML pulsewidth of the EDFL is discussed by changing the SWCNT-PVA SA film thicknesses, together with adjusting the pumping power and the intra-cavity feedback ratio. An almost 6 dB increment of divergent loss when enlarging the SWCNT-PVA based SA film thickness from 30–130 µm is observed. When shrinking the SA thickness to 30 µm at the largest pumping power of 52.5 mW, the optical spectrum red-shifts to 1558.8 nm with its 3 dB spectral linewidth broadening up to 2.7 nm, while the pulse has already entered the soliton regime with multi-order Kelly sidebands aside the spectral shoulder. The soliton pulsewidth is as short as 790 fs, which is much shorter than those obtained with other thicker SWCNT doped PVA polymer film based SAs; therefore, the peak power from the output of the PML-EDFL is significantly enlarged accompanied by a completely suppressed residual continuous-wave level to achieve the largest on/off extinction ratio. The main mechanism of pulse shortening with reducing thickness of SWCNT doped PVA polymer film based SA is attributed to the limited beam expansion as well as the enlarged modulation depth, which results in shortened soliton pulsewidth with a clean dc background, and broadened spectrum with enriched Kelly sidebands. The increase of total SWCNT amount in the thicker SA inevitably causes a higher linear absorption; hence, the mode-locking threshold also rises accordingly. By enlarging pumping power from 38.5–52.5 mW, the highest ascent on pulse extinction of up to 32 dB is observed among all kinds of feedback conditions. Nevertheless, the enlargement on the extinction slightly decays with increasing the feedback ratio from 30–90

  18. Standardization of Schwarz-Christoffel transformation for engineering design of semiconductor and hybrid integrated-circuit elements

    Science.gov (United States)

    Yashin, A. A.

    1985-04-01

    A semiconductor or hybrid structure into a calculable two-dimensional region mapped by the Schwarz-Christoffel transformation and a universal algorithm can be constructed on the basis of Maxwell's electro-magnetic-thermal similarity principle for engineering design of integrated-circuit elements. The design procedure involves conformal mapping of the original region into a polygon and then the latter into a rectangle with uniform field distribution, where conductances and capacitances are calculated, using tabulated standard mapping functions. Subsequent synthesis of a device requires inverse conformal mapping. Devices adaptable as integrated-circuit elements are high-resistance film resistors with periodic serration, distributed-resistance film attenuators with high transformation ratio, coplanar microstrip lines, bipolar transistors, directional couplers with distributed coupling to microstrip lines for microwave bulk devices, and quasirregular smooth matching transitions from asymmetric to coplanar microstrip lines.

  19. Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure

    KAUST Repository

    Sun, Jian; Kosel, Jü rgen; Gooneratne, Chinthaka Pasan; Soh, Yeongah

    2010-01-01

    The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show

  20. Multiway study of hybridization in nanoscale semiconductor labeled DNA based on fluorescence resonance energy transfer

    DEFF Research Database (Denmark)

    Gholami, Somayeh; Kompany Zare, Mohsen

    2013-01-01

    donor-QD acceptor) upon hybridization with a label free target was monitored by two-dimensional photoluminescence excitation spectroscopy (2D-PLE). Detection of a target oligonucleotide strand, using sandwiched nanoassembly in a separation-free format, was performed with the appearance of a new feature...... and model based analysis of 2D-PLE data was implemented by means of PAR-AFAC and hard trilinear decomposition (HTD), allowing to fit a proper model for FRET-based sandwich DNA hybridization systems. This study is the first successful application of a multiway chemometric technique to consider FRET based DNA...... hybridization in sandwiched nanoassemblies. A multi-equilibria model was properly fitted to the data and confirmed there is a competition between ternary and binary complex formation. Equilibrium constants of DNA hybridization in sandwiched nanoassemblies were estimated for the first time. Equilibrium constants...

  1. Synthesis, structural, thermal and optical studies of inorganic-organic hybrid semiconductors, R-PbI4

    Science.gov (United States)

    Pradeesh, K.; Nageswara Rao, K.; Vijaya Prakash, G.

    2013-02-01

    Wide varieties of naturally self-assembled two-dimensional inorganic-organic (IO) hybrid semiconductors, (4-ClC6H4NH3)2PbI4, (C6H9C2H4NH3)2PbI4, (CnH2n+1NH3)2PbI4 (where n = 12, 16, 18), (CnH2n-1NH3)2PbI4 (where n = 3, 4, 5), (C6H5C2H4NH3)2PbI4, NH3(CH2)12NH3PbI4, and (C4H3SC2H4NH3)2PbI4, were fabricated by intercalating structurally diverse organic guest moieties into lead iodide perovskite structure. The crystal packing of all these fabricated IO-hybrids comprises of well-ordered organic and inorganic layers, stacked-up alternately along c-axis. Almost all these hybrids are thermally stable upto 200 °C and show strong room-temperature exciton absorption and photoluminescence features. These strongly confined optical excitons are highly influenced by structural deformation of PbI matrix due to the conformation of organic moiety. A systematic correlation of optical exciton behavior of IO-hybrids with the organic/inorganic layer thicknesses, intercalating organic moieties, and various structural disorders were discussed. This systematic study clearly suggests that the PbI layer crumpling is directly responsible for the tunability of optical exciton energy.

  2. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    CERN Document Server

    Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

    1999-01-01

    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  3. Gigahertz repetition rate, sub-femtosecond timing jitter optical pulse train directly generated from a mode-locked Yb:KYW laser.

    Science.gov (United States)

    Yang, Heewon; Kim, Hyoji; Shin, Junho; Kim, Chur; Choi, Sun Young; Kim, Guang-Hoon; Rotermund, Fabian; Kim, Jungwon

    2014-01-01

    We show that a 1.13 GHz repetition rate optical pulse train with 0.70 fs high-frequency timing jitter (integration bandwidth of 17.5 kHz-10 MHz, where the measurement instrument-limited noise floor contributes 0.41 fs in 10 MHz bandwidth) can be directly generated from a free-running, single-mode diode-pumped Yb:KYW laser mode-locked by single-wall carbon nanotube-coated mirrors. To our knowledge, this is the lowest-timing-jitter optical pulse train with gigahertz repetition rate ever measured. If this pulse train is used for direct sampling of 565 MHz signals (Nyquist frequency of the pulse train), the jitter level demonstrated would correspond to the projected effective-number-of-bit of 17.8, which is much higher than the thermal noise limit of 50 Ω load resistance (~14 bits).

  4. High-resolution retinal swept source optical coherence tomography with an ultra-wideband Fourier-domain mode-locked laser at MHz A-scan rates.

    Science.gov (United States)

    Kolb, Jan Philip; Pfeiffer, Tom; Eibl, Matthias; Hakert, Hubertus; Huber, Robert

    2018-01-01

    We present a new 1060 nm Fourier domain mode locked laser (FDML laser) with a record 143 nm sweep bandwidth at 2∙ 417 kHz  =  834 kHz and 120 nm at 1.67 MHz, respectively. We show that not only the bandwidth alone, but also the shape of the spectrum is critical for the resulting axial resolution, because of the specific wavelength-dependent absorption of the vitreous. The theoretical limit of our setup lies at 5.9 µm axial resolution. In vivo MHz-OCT imaging of human retina is performed and the image quality is compared to the previous results acquired with 70 nm sweep range, as well as to existing spectral domain OCT data with 2.1 µm axial resolution from literature. We identify benefits of the higher resolution, for example the improved visualization of small blood vessels in the retina besides several others.

  5. Comparison of Monolithic Optical Frequency Comb Generators Based on Passively Mode-Locked Lasers for Continuous Wave mm-Wave and Sub-THz Generation

    DEFF Research Database (Denmark)

    Criado, A. R.; de Dios, C.; Acedo, P.

    2012-01-01

    In this paper, two different Passive Mode-Locked Laser Diodes (PMLLD) structures, a Fabry–Perot cavity and a ring cavity laser are characterized and evaluated as monolithic Optical Frequency Comb Generators (OFCG) for CW sub-THz generation. An extensive characterization of the devices under study...... is carried out based on an automated measurement system that systematically evaluates the dynamic characteristics of the devices, focusing on the figures of merit that define the optimum performance of a pulsed laser source when considered as an OFCG. Sub-THz signals generated with both devices at 60 GHz...... topologies that can be used for the implementation of photonic integrated sub-THz CW generation....

  6. Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking

    International Nuclear Information System (INIS)

    Kim, Won-Jun; Debnath, Pulak C; Song, Yong-Won; Lee, Junsu; Lee, Ju Han; Lim, Dae-Soon

    2013-01-01

    Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz. (paper)

  7. Uniform spacing interrogation of a Fourier domain mode-locked fiber Bragg grating sensor system using a polarization-maintaining fiber Sagnac interferometer

    Science.gov (United States)

    Lee, Hwi Don; Jung, Eun Joo; Jeong, Myung Yung; Chen, Zhongping; Kim, Chang-Seok

    2014-01-01

    A novel linearized interrogation method is presented for a Fourier domain mode-locked (FDML) fiber Bragg grating (FBG) sensor system. In a high speed regime over several tens of kHz modulations, a sinusoidal wave is available to scan the center wavelength of an FDML wavelength-swept laser, instead of a conventional triangular wave. However, sinusoidal wave modulation suffers from an exaggerated non-uniform wavelength-spacing response in demodulating the time-encoded parameter to the absolute wavelength. In this work, the calibration signal from a polarization-maintaining fiber Sagnac interferometer shares the FDML wavelength-swept laser for FBG sensors to convert the time-encoded FBG signal to the wavelength-encoded uniform-spacing signal. PMID:24489440

  8. Transfer of an exfoliated monolayer graphene flake onto an optical fiber end face for erbium-doped fiber laser mode-locking

    International Nuclear Information System (INIS)

    Rosa, Henrique Guimaraes; De Souza, Eunézio A Thoroh; Gomes, José Carlos Viana

    2015-01-01

    This paper presents, for the first time, the successful transfer of exfoliated monolayer graphene flake to the optical fiber end face and alignment to its core. By fabricating and optimizing a polymeric poly(methyl methacrylate) (PMMA) and polyvinyl alcohol (PVA) substrate, it is possible to obtain a contrast of up to 11% for green light illumination, allowing the identification of monolayer graphene flakes that were transferred to optical fiber samples and aligned to its core. With Raman spectroscopy, it is demonstrated that graphene flake completely covers the optical fiber core, and its quality remains unaltered after the transfer. The generation of mode-locked erbium-doped fiber laser pulses, with a duration of 672 fs, with a single-monolayer graphene flake as a saturable absorber, is demonstrated for the first time. This transfer technique is of general applicability and can be used for other two-dimensional (2D) exfoliated materials. (letter)

  9. Generation of “gigantic” ultra-short microwave pulses based on passive mode-locking effect in electron oscillators with saturable absorber in the feedback loop

    International Nuclear Information System (INIS)

    Ginzburg, N. S.; Denisov, G. G.; Vilkov, M. N.; Zotova, I. V.; Sergeev, A. S.

    2016-01-01

    A periodic train of powerful ultrashort microwave pulses can be generated in electron oscillators with a non-linear saturable absorber installed in the feedback loop. This method of pulse formation resembles the passive mode-locking widely used in laser physics. Nevertheless, there is a specific feature in the mechanism of pulse amplification when consecutive energy extraction from different fractions of a stationary electron beam takes place due to pulse slippage over the beam caused by the difference between the wave group velocity and the electron axial velocity. As a result, the peak power of generated “gigantic” pulses can exceed not only the level of steady-state generation but also, in the optimal case, the power of the driving electron beam.

  10. Uniform spacing interrogation of a Fourier domain mode-locked fiber Bragg grating sensor system using a polarization-maintaining fiber Sagnac interferometer

    International Nuclear Information System (INIS)

    Lee, Hwi Don; Jeong, Myung Yung; Chen, Zhongping; Kim, Chang-Seok; Jung, Eun Joo

    2013-01-01

    A novel linearized interrogation method is presented for a Fourier domain mode-locked (FDML) fiber Bragg grating (FBG) sensor system. In a high speed regime over several tens of kHz modulations, a sinusoidal wave is available to scan the center wavelength of an FDML wavelength-swept laser, instead of a conventional triangular wave. However, sinusoidal wave modulation suffers from an exaggerated non-uniform wavelength-spacing response in demodulating the time-encoded parameter to the absolute wavelength. In this work, the calibration signal from a polarization-maintaining fiber Sagnac interferometer shares the FDML wavelength-swept laser for FBG sensors to convert the time-encoded FBG signal to the wavelength-encoded uniform-spacing signal. (paper)

  11. Uniform spacing interrogation of a Fourier domain mode-locked fiber Bragg grating sensor system using a polarization-maintaining fiber Sagnac interferometer

    Science.gov (United States)

    Lee, Hwi Don; Jung, Eun Joo; Jeong, Myung Yung; Chen, Zhongping; Kim, Chang-Seok

    2013-06-01

    A novel linearized interrogation method is presented for a Fourier domain mode-locked (FDML) fiber Bragg grating (FBG) sensor system. In a high speed regime over several tens of kHz modulations, a sinusoidal wave is available to scan the center wavelength of an FDML wavelength-swept laser, instead of a conventional triangular wave. However, sinusoidal wave modulation suffers from an exaggerated non-uniform wavelength-spacing response in demodulating the time-encoded parameter to the absolute wavelength. In this work, the calibration signal from a polarization-maintaining fiber Sagnac interferometer shares the FDML wavelength-swept laser for FBG sensors to convert the time-encoded FBG signal to the wavelength-encoded uniform-spacing signal.

  12. Comparison on exfoliated graphene nano-sheets and triturated graphite nano-particles for mode-locking the Erbium-doped fibre lasers

    Science.gov (United States)

    Yang, Chun-Yu; Lin, Yung-Hsiang; Wu, Chung-Lun; Cheng, Chih-Hsien; Tsai, Din-Ping; Lin, Gong-Ru

    2018-06-01

    Comparisons on exfoliated graphene nano-sheets and triturated graphite nano-particles for mode-locking the Erbium-doped fiber lasers (EDFLs) are performed. As opposed to the graphite nano-particles obtained by physically triturating the graphite foil, the tri-layer graphene nano-sheets is obtained by electrochemically exfoliating the graphite foil. To precisely control the size dispersion and the layer number of the exfoliated graphene nano-sheet, both the bias of electrochemical exfoliation and the speed of centrifugation are optimized. Under a threshold exfoliation bias of 3 volts and a centrifugation at 1000 rpm, graphene nano-sheets with an average diameter of 100  ±  40 nm can be obtained. The graphene nano-sheets with an area density of 15 #/µm2 are directly imprinted onto the end-face of a single-mode fiber made patchcord connector inside the EDFL cavity. Such electrochemically exfoliated graphene nano-sheets show comparable saturable absorption with standard single-graphene and perform the self-amplitude modulation better than physically triturated graphite nano-particles. The linear transmittance and modulation depth of the inserted graphene nano-sheets are 92.5% and 53%, respectively. Under the operation with a power gain of 21.5 dB, the EDFL can be passively mode-locked to deliver a pulsewidth of 454.5 fs with a spectral linewidth of 5.6 nm. The time-bandwidth product of 0.31 is close to the transform limit. The Kelly sideband frequency spacing of 1.34 THz is used to calculate the chirp coefficient as  ‑0.0015.

  13. 75As-NQR study of the hybridization gap semiconductor CeOs4As12

    International Nuclear Information System (INIS)

    Yogi, M; Niki, H; Higa, N; Kawata, T; Sekine, C

    2016-01-01

    We performed an 75 As nuclear quadrupole resonance (NQR) measurement on CeOs 4 As 12 . The 75 As-NQR spectrum shape demonstrates that the Ce-site filling fraction of our high-pressure synthesized sample is close to unity. A presence of the c — f hybridization gap is confirmed from the temperature dependence of the nuclear spin-lattice relaxation rate 1/T 1 . An increase of 1/T 1 below ∼3 K indicates a development of the spin fluctuations. The 1/T 1 for CeOs 4 As 12 shows similar behavior as that for CeOs 4 Sb 12 with different magnitude of the c — f hybridization gap. An absence of phase transition in CeOs 4 As 12 may be caused by the increase of the c — f hybridization, which increases the gap magnitude and reduces the residual density of state inside the gap. (paper)

  14. Direct deposition of inorganic–organic hybrid semiconductors and their template-assisted microstructures

    International Nuclear Information System (INIS)

    Dwivedi, V.K.; Baumberg, J.J.; Prakash, G. Vijaya

    2013-01-01

    A straight-forward method is developed to deposit a new class of self-organized inorganic–organic (IO) hybrid, (C 12 H 25 NH 3 ) 2 PbI 4 . These IO hybrid structures are stacked-up as natural multiple quantum well structures and exhibit strong room-temperature exciton emission and other multifunctional features. Here it is successfully demonstrated that these materials can be directly carved into 2D photonic structures from the inexpensive template-assisted electrochemical deposition followed by solution processing. The applicability of this method for many such varieties of IO-hybrids is also explored. By appropriately controlling the deposition conditions and the self-assembly templates, target structures are developed for new-generation low-cost photonic devices. -- Highlights: ► New fabrication methodology for self-organized inorganic–organic hybrids. ► Strongly confined exciton emission and photoconductive properties. ► Simple bottom-up fabrication for device applications.

  15. Integer Charge Transfer and Hybridization at an Organic Semiconductor/Conductive Oxide Interface

    KAUST Repository

    Gruenewald, Marco

    2015-02-11

    We investigate the prototypical hybrid interface formed between PTCDA and conductive n-doped ZnO films by means of complementary optical and electronic spectroscopic techniques. We demonstrate that shallow donors in the vicinity of the ZnO surface cause an integer charge transfer to PTCDA, which is clearly restricted to the first monolayer. By means of DFT calculations, we show that the experimental signatures of the anionic PTCDA species can be understood in terms of strong hybridization with localized states (the shallow donors) in the substrate and charge back-donation, resulting in an effectively integer charge transfer across the interface. Charge transfer is thus not merely a question of locating the Fermi level above the PTCDA electron-transport level but requires rather an atomistic understanding of the interfacial interactions. The study reveals that defect sites and dopants can have a significant influence on the specifics of interfacial coupling and thus on carrier injection or extraction.

  16. Hybrid organic-inorganic porous semiconductor transducer for multi-parameters sensing.

    Science.gov (United States)

    Caliò, Alessandro; Cassinese, Antonio; Casalino, Maurizio; Rea, Ilaria; Barra, Mario; Chiarella, Fabio; De Stefano, Luca

    2015-07-06

    Porous silicon (PSi) non-symmetric multi-layers are modified by organic molecular beam deposition of an organic semiconductor, namely the N,N'-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide (PDIF-CN2). Joule evaporation of PDIF-CN2 into the PSi sponge-like matrix not only improves but also adds transducing skills, making this solid-state device a dual signal sensor for chemical monitoring. PDIF-CN2 modified PSi optical microcavities show an increase of about five orders of magnitude in electric current with respect to the same bare device. This feature can be used to sense volatile substances. PDIF-CN2 also improves chemical resistance of PSi against alkaline and acid corrosion. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

  17. Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure

    Science.gov (United States)

    Korenev, V. L.; Salewski, M.; Akimov, I. A.; Sapega, V. F.; Langer, L.; Kalitukha, I. V.; Debus, J.; Dzhioev, R. I.; Yakovlev, D. R.; Müller, D.; Schröder, C.; Hövel, H.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Kusrayev, Yu. G.; Bayer, M.

    2016-01-01

    Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wavefunction overlap and is therefore short-ranged, so that it may be compromised across the hybrid interface. Here we study a hybrid structure consisting of a ferromagnetic Co layer and a semiconducting CdTe quantum well, separated by a thin (Cd, Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wavefunction overlap of quantum well holes and magnetic atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 30 nm. We suggest that the resulting spin polarization of acceptor-bound holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.

  18. Hybrid composites of monodisperse pi-conjugated rodlike organic compounds and semiconductor quantum particles

    DEFF Research Database (Denmark)

    Hensel, V.; Godt, A.; Popovitz-Biro, R.

    2002-01-01

    Composite materials of quantum particles (Q-particles) arranged in layers within crystalline powders of pi-conjugated, rodlike dicarboxylic acids are reported. The synthesis of the composites, either as three-dimensional crystals or as thin films at the air-water interface, comprises a two...... analysis of the solids and grazing incidence X-ray diffraction analysis of the films on water. 2) Topotactic solid/gas reaction of these salts with H2S to convert the metal ions into Q-particles of CdS or PbS embedded in the organic matrix that consists of the acids 6(H) and 8(H). These hybrid materials...

  19. Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device

    Directory of Open Access Journals (Sweden)

    Shawn Sanctis

    2015-03-01

    Full Text Available Tobacco mosaic virus (TMV has been employed as a robust functional template for the fabrication of a TMV/zinc oxide field effect transistor (FET. A microwave based approach, under mild conditions was employed to synthesize stable zinc oxide (ZnO nanoparticles, employing a molecular precursor. Insightful studies of the decomposition of the precursor were done using NMR spectroscopy and material characterization of the hybrid material derived from the decomposition was achieved using dynamic light scattering (DLS, transmission electron microscopy (TEM, grazing incidence X-ray diffractometry (GI-XRD and atomic force microscopy (AFM. TEM and DLS data confirm the formation of crystalline ZnO nanoparticles tethered on top of the virus template. GI-XRD investigations exhibit an orientated nature of the deposited ZnO film along the c-axis. FET devices fabricated using the zinc oxide mineralized virus template material demonstrates an operational transistor performance which was achieved without any high-temperature post-processing steps. Moreover, a further improvement in FET performance was observed by adjusting an optimal layer thickness of the deposited ZnO on top of the TMV. Such a bio-inorganic nanocomposite semiconductor material accessible using a mild and straightforward microwave processing technique could open up new future avenues within the field of bio-electronics.

  20. Direct immobilization and hybridization of DNA on group III nitride semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Xu Xiaobin; Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh; Bergkvist, Magnus [College of Nanoscale Science and Engineering, University at Albany (SUNY), 255 Fuller Road, Albany, NY 12203 (United States); Cady, Nathaniel C. [College of Nanoscale Science and Engineering, University at Albany (SUNY), 255 Fuller Road, Albany, NY 12203 (United States)], E-mail: ncady@uamail.albany.edu

    2009-03-15

    A key concern for group III-nitride high electron mobility transistor (HEMT) biosensors is the anchoring of specific capture molecules onto the gate surface. To this end, a direct immobilization strategy was developed to attach single-stranded DNA (ssDNA) to AlGaN surfaces using simple printing techniques without the need for cross-linking agents or complex surface pre-functionalization procedures. Immobilized DNA molecules were stably attached to the AlGaN surfaces and were able to withstand a range of pH and ionic strength conditions. The biological activity of surface-immobilized probe DNA was also retained, as demonstrated by sequence-specific hybridization experiments. Probe hybridization with target ssDNA could be detected by PicoGreen fluorescent dye labeling with a minimum detection limit of 2 nM. These experiments demonstrate a simple and effective immobilization approach for attaching nucleic acids to AlGaN surfaces which can further be used for the development of HEMT-based DNA biosensors.

  1. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

    2015-08-24

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

  2. Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure

    KAUST Repository

    Sun, Jian

    2010-11-01

    The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.

  3. Non-equilibrium correlations and entanglement in a semiconductor hybrid circuit-QED system

    International Nuclear Information System (INIS)

    Contreras-Pulido, L D; Emary, C; Brandes, T; Aguado, Ramón

    2013-01-01

    We present a theoretical study of a hybrid circuit-quantum electrodynamics system composed of two semiconducting charge-qubits confined in a microwave resonator. The qubits are defined in terms of the charge states of two spatially separated double quantum dots (DQDs) which are coupled to the same photon mode in the microwave resonator. We analyse a transport setup where each DQD is attached to electronic reservoirs and biased out-of-equilibrium by a large voltage, and study how electron transport across each DQD is modified by the coupling to the common resonator. In particular, we show that the inelastic current through each DQD reflects an indirect qubit–qubit interaction mediated by off-resonant photons in the microwave resonator. As a result of this interaction, both charge qubits stay entangled in the steady (dissipative) state. Finite shot noise cross-correlations between currents across distant DQDs are another manifestation of this nontrivial steady-state entanglement. (paper)

  4. Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

    International Nuclear Information System (INIS)

    Li Mi-Feng; Ni Hai-Qiao; Niu Zhi-Chuan; Ding Ying; David Bajek; Liang Kong; Ana Cataluna Maria

    2014-01-01

    The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 °C, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1 × 10 −6 Torr (1 Torr = 1.33322 × 10 2 Pa), provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a ∼ 19.7-GHz repetition rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Ultrashort Generation Regimes in the All-Fiber Kerr Mode-Locked Erbium-Doped Fiber Ring Laser for Terahertz Pulsed Spectroscopy

    Directory of Open Access Journals (Sweden)

    V. S. Voropaev

    2015-01-01

    Full Text Available Many femtosecond engineering applications require for a stable generation of ultrashort pulses. Thus, in the terahertz pulsed spectroscopy a measurement error in the refractive index is strongly dependent on the pulse duration stability with allowable variation of few femtoseconds. The aim of this work is to study the ultrashort pulses (USP regimes stability in the all – fiber erbium doped ring laser with Kerr mode-locking. The study was conducted at several different values of the total resonator intra-cavity dispersion. Three laser schemes with the intra-cavity dispersion values from -1.232 ps2 to +0.008 ps2 have been studied. In the experiment there were two regimes of generation observed: the stretched pulse generation and ordinary soliton generation. Main attention is focused on the stability of regimes under study. The most stable regime was that of the stretched pulse generation with a spectrum form of sech2 , possible pulse duration of 490 fs at least, repetition rate of 2.9 MHz, and average output power of 17 mW. It is worth noting, that obtained regimes had characteristics suitable for the successful use in the terahertz pulsed spectroscopy. The results may be useful in the following areas of science and technology: a high-precision spectroscopy, optical frequency standards, super-continuum generation, and terahertz pulsed spectroscopy. The future system development is expected to stabilize duration and repetition rate of the obtained regime of ultra-short pulse generation.

  6. Asynchronous and synchronous dual-wavelength pulse generation in a passively mode-locked fiber laser with a mode-locker.

    Science.gov (United States)

    Hu, Guoqing; Pan, Yingling; Zhao, Xin; Yin, Siyao; Zhang, Meng; Zheng, Zheng

    2017-12-01

    The evolution from asynchronous to synchronous dual-wavelength pulse generation in a passively mode-locked fiber laser is experimentally investigated by tailoring the intracavity dispersion. Through tuning the intracavity-loss-dependent gain profile and the birefringence-induced filter effect, asynchronous dual-wavelength soliton pulses can be generated until the intracavity anomalous dispersion is reduced to ∼8  fs/nm. The transition from asynchronous to synchronous pulse generation is then observed at an elevated pump power in the presence of residual anomalous dispersion, and it is shown that pulses are temporally synchronized at the mode-locker in the cavity. Spectral sidelobes are observed and could be attributed to the four-wave-mixing effect between dual-wavelength pulses at the carbon nanotube mode-locker. These results could provide further insight into the design and realization of such dual-wavelength ultrafast lasers for different applications such as dual-comb metrology as well as better understanding of the inter-pulse interactions in such dual-comb lasers.

  7. Organic-inorganic semiconductor hybrid systems. Structure, morphology, and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    El Helou, Mira

    2012-08-22

    This dissertation addresses the preparation and characterization of hybrid semiconducting systems combining organic with inorganic materials. Characterization methods used included to determine the structure, morphology, and thermal stability comprised X-ray diffraction (XRD), atomic force microscopy (AFM), thermal desorption spectroscopy (TDS), and X-ray photoelectron spectroscopy (XPS). One organic-inorganic semiconducting system was pentacene (C{sub 22}H{sub 14}) and zinc oxide. This interface was investigated in detail for pentacene on an oxygen-terminated zinc oxide surface, i.e. ZnO(000 anti 1). An extended study on the promising p-n junction was carried out for pentacene on ZnO with different orientations which exhibit different chemical and structural characteristics: ZnO(000 anti 1), ZnO(0001), and ZnO(10 anti 10). Moreover, the organic crystal structure of pentacene was selectively tuned by carefully choosing the substrate temperature. This defined interface with a physisorbed pentacene layer on ZnO was characterized by optical absorption which depends on the temperature of the measured system, the pentacene film thickness, and the molecular orientation and packing. The high quality of the pentacene films allowed in one case to characterize the Davydov splitting by linear polarized light focused on a single crystallite. Another subject in the field of organic-inorganic hybrid materials comprised conjugated dithiols used as self-assembled monolayers (SAMs) for immobilizing semiconducting CdS nanoparticles (NPs) on Au substrates. It was demonstrated that an appropriate selection and preparation of the conjugated SAMs is crucial for building up a light-addressable potentiometric sensor with a sufficient efficiency. An optimized electron transfer was achieved with SAMs of long range ordering, high stability, and adequate conductivity. This was examined for different linkers and was best for stilbenedithiol immobilized in solution at higher temperatures. Due

  8. Exploiting energy transfer in hybrid metal and semiconductor nanoparticle systems for biosensing and energy harvesting

    Energy Technology Data Exchange (ETDEWEB)

    Mayilo, Sergiy

    2009-06-19

    In this work, gold and semiconductor nanoparticles are used as building blocks for nanostructures, in which energy transfer is investigated. Fluorescence quenching by gold nanoparticles is investigated and used to develop novel immunoassays for medically relevant molecules. The influence of gold nanoparticles on radiative and non-radiative rates of Cy3 and Cy3B dyes is studied here. A competitive, homogeneous immunoassay for digoxigenin and digoxin, a drug used to cure heart diseases, is developed. The assay has a limit of detection of 0.5 nM in buffer and 50 nM in serum. Time resolved spectroscopy reveals that the quenching is due to energy transfer with an efficiency of 70%. A homogeneous sandwich immunoassay for cardiac troponin T, an indicator of damage to the heart muscle, is developed. Gold nanoparticles and fluorophores are functionalized with anti-troponin T antibodies. In the presence of troponin T the nanoparticles and fluorophores form a sandwich structure, in which the dye fluorescence is quenched by a gold nanoparticle. The limit of detection of the immunoassay in buffer is 0.02 nM and 0.11 nM in serum. Energy transfer is demonstrated in clusters of CdTe nanocrystals assembled using three methods. In the first method, clusters of differently-sized water soluble CdTe nanocrystals capped by negatively charged mercaptoacid stabilizers are produced through electrostatic interactions with positively charged Ca{sup 2+} cations. The two other methods employ covalent binding through dithiols and thiolated DNA as linkers between nanocrystals. Energy transfer from smaller nanocrystals to larger nanocrystals in aggregates is demonstrated by means of steady-state and time-resolved photoluminescence spectroscopy, paving the way for nanocrystal-based light harvesting structures in solution. Multi-shell onion-like CdSe/ZnS/CdSe/ZnS nanocrystals are presented. The shade of the white light can be controlled by annealing the particles. Evidence for intra

  9. SEMICONDUCTOR INTEGRATED CIRCUITS: A high performance 90 nm CMOS SAR ADC with hybrid architecture

    Science.gov (United States)

    Xingyuan, Tong; Jianming, Chen; Zhangming, Zhu; Yintang, Yang

    2010-01-01

    A 10-bit 2.5 MS/s SAR A/D converter is presented. In the circuit design, an R-C hybrid architecture D/A converter, pseudo-differential comparison architecture and low power voltage level shifters are utilized. Design challenges and considerations are also discussed. In the layout design, each unit resistor is sided by dummies for good matching performance, and the capacitors are routed with a common-central symmetry method to reduce the nonlin-earity error. This proposed converter is implemented based on 90 nm CMOS logic process. With a 3.3 V analog supply and a 1.0 V digital supply, the differential and integral nonlinearity are measured to be less than 0.36 LSB and 0.69 LSB respectively. With an input frequency of 1.2 MHz at 2.5 MS/s sampling rate, the SFDR and ENOB are measured to be 72.86 dB and 9.43 bits respectively, and the power dissipation is measured to be 6.62 mW including the output drivers. This SAR A/D converter occupies an area of 238 × 214 μm2. The design results of this converter show that it is suitable for multi-supply embedded SoC applications.

  10. Magnetic-field-driven electron transport in ferromagnetic/ insulator/semiconductor hybrid structures

    Science.gov (United States)

    Volkov, N. V.; Tarasov, A. S.; Rautskii, M. V.; Lukyanenko, A. V.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 106% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 104% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.

  11. 41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

    DEFF Research Database (Denmark)

    Dontabactouny, M.; Piron, R.; Klaime, K.

    2012-01-01

    This paper reports recent results on InAs/InP quantum dash-based, two-section, passively mode-locked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 mu m at 20 degrees C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 m...

  12. Mathematical solutions of rate equations of a laser-diode end-pumped passively Q-switched and mode locked Nd-laser with Cr4+:YAG polarized saturable absorber

    International Nuclear Information System (INIS)

    Abdul Ghani, B.; Hammadi, M.

    2012-01-01

    The intracavity frequency-doubling (IFD) of a simultaneous passively Q-switched mode-locked diode-pumped Nd 3 + - laser is studied with a polarized isotropic Cr 4 +: YAG saturable absorber. A general recurrence formula for the mode-locked pulses under the Q-switched envelope at fundamental wavelength has been reconstructed in order to analyze the temporal shape behavior of a single Q-switched envelope with mode-locking pulse trains. This formula has been derived taking into account the impact of the IFD and polarized Cr 4 +: YAG saturable absorber.The presented mathematical model describes the self-induced anisotropy appeared in the polarized Cr 4 +: YAG in the nonlinear stage of the giant pulse formation. For the anisotropic Nd 3 +: YVO 4 active medium, the generated polarized waves are assumed to be fixed through the lasing cycle. Besides, the maximum absorber initial transmission and the minimum mirror reflectivity values have been determined from the second threshold criterion. The calculated numerical results demonstrate the impact of the variation of the input laser parameters (rotational angle of the polarized crystal, absorber initial transmission and the output mirror reflectivity) on the characteristics of the output laser pulse (SH peak power, pulse width, pulse duration and shift pulse position of central mode). The calculated numerical results in this work is in good qualitative and quantitative agreement with the available experimental data reported in the references. (author)

  13. Accuracy of dielectric-dependent hybrid functionals in the prediction of optoelectronic properties of metal oxide semiconductors: a comprehensive comparison with many-body GW and experiments

    Science.gov (United States)

    Gerosa, M.; E Bottani, C.; Di Valentin, C.; Onida, G.; Pacchioni, G.

    2018-01-01

    Understanding the electronic structure of metal oxide semiconductors is crucial to their numerous technological applications, such as photoelectrochemical water splitting and solar cells. The needed experimental and theoretical knowledge goes beyond that of pristine bulk crystals, and must include the effects of surfaces and interfaces, as well as those due to the presence of intrinsic defects (e.g. oxygen vacancies), or dopants for band engineering. In this review, we present an account of the recent efforts in predicting and understanding the optoelectronic properties of oxides using ab initio theoretical methods. In particular, we discuss the performance of recently developed dielectric-dependent hybrid functionals, providing a comparison against the results of many-body GW calculations, including G 0 W 0 as well as more refined approaches, such as quasiparticle self-consistent GW. We summarize results in the recent literature for the band gap, the band level alignment at surfaces, and optical transition energies in defective oxides, including wide gap oxide semiconductors and transition metal oxides. Correlated transition metal oxides are also discussed. For each method, we describe successes and drawbacks, emphasizing the challenges faced by the development of improved theoretical approaches. The theoretical section is preceded by a critical overview of the main experimental techniques needed to characterize the optoelectronic properties of semiconductors, including absorption and reflection spectroscopy, photoemission, and scanning tunneling spectroscopy (STS).

  14. Direct measurement of the long-range p -d exchange coupling in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure

    Science.gov (United States)

    Akimov, I. A.; Salewski, M.; Kalitukha, I. V.; Poltavtsev, S. V.; Debus, J.; Kudlacik, D.; Sapega, V. F.; Kopteva, N. E.; Kirstein, E.; Zhukov, E. A.; Yakovlev, D. R.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Korenev, V. L.; Kusrayev, Yu. G.; Bayer, M.

    2017-11-01

    The exchange interaction between magnetic ions and charge carriers in semiconductors is considered to be a prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range p -d exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10-nm-thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10 nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift ΔS on the external magnetic field B . We show that in a strong magnetic field, ΔS is a linear function of B with an offset of Δp d=50 -100 μ eV at zero field from the FM induced effective exchange field. On the other hand, the s -d exchange interaction between conduction band electrons and FM, as well as the p -d contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.

  15. A self-starting hybrid optoelectronic oscillator generating ultra low jitter 10-GHz optical pulses and low phase noise electrical signals

    DEFF Research Database (Denmark)

    Lasri, J.; Bilenca, A.; Dahan, D.

    2002-01-01

    In this letter, we describe a self-starting optical pulse source generating ultra low noise 15-ps-wide pulses at 10 GHz. It is based on a hybrid optoelectronic oscillator comprising a fiber extended cavity mode-locked diode laser which injection locks a self-oscillating heterojunction bipolar...

  16. Hybrid Pulsed Nd:YAG Laser

    Science.gov (United States)

    Miller, Sawyer; Trujillo, Skyler; Fort Lewis College Laser Group Team

    This work concerns the novel design of an inexpensive pulsed Nd:YAG laser, consisting of a hybrid Kerr Mode Lock (KLM) and Q-switch pulse. The two pulse generation systems work independently, non simultaneously of each other, thus generating the ability for the user to easily switch between ultra-short pulse widths or large energy density pulses. Traditionally, SF57 glass has been used as the Kerr medium. In this work, novel Kerr mode-locking mediums are being investigated including: tellurite compound glass (TeO2), carbon disulfide (CS2), and chalcogenide glass. These materials have a nonlinear index of refraction orders of magnitude,(n2), larger than SF57 glass. The Q-switched pulse will utilize a Pockels cell. As the two pulse generation systems cannot be operated simultaneously, the Pockels cell and Kerr medium are attached to kinematic mounts, allowing for quick interchange between systems. Pulse widths and repetition rates will vary between the two systems. A goal of 100 picosecond pulse widths are desired for the mode-locked system. A goal of 10 nanosecond pulse widths are desired for the Q-switch system, with a desired repetition rate of 50 Hz. As designed, the laser will be useful in imaging applications.

  17. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory

    Science.gov (United States)

    Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme M.; Da Silva, Juarez L. F.

    2018-02-01

    Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on an equal footing, is due to the unphysical self-interaction problem that mainly affects the band gap and spin-orbit splitting (SOC) in semiconductors and, in particular, III-V systems with similar magnitude of the band gap and SOC. In this work, we report a consistent study of the structural and electronic properties of the III-V semiconductors by using the screening hybrid-density functional theory framework, by fitting the α parameters for 12 different III-V compounds, namely, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, and InSb, to minimize the deviation between the theoretical and experimental values of the band gap and SOC. Structural relaxation effects were also included. Except for AlP, whose α = 0.127, we obtained α values that ranged from 0.209 to 0.343, which deviate by less than 0.1 from the universal value of 0.25. Our results for the lattice parameter and elastic constants indicate that the fitting of α does not affect those structural parameters when compared with the HSE06 functional, where α = 0.25. Our analysis of the band structure based on the k ṡ p method shows that the effective masses are in agreement with the experimental values, which can be attributed to the simultaneous fitting of the band gap and SOC. Also, we estimate the values of g-factors, extracted directly from the band structure, which are close to experimental results, which indicate that the obtained band structure produced a realistic set of k ṡ p parameters.

  18. A study of the talent training project management for semiconductor industry in Taiwan: the application of a hybrid data envelopment analysis approach.

    Science.gov (United States)

    Kao, Ling-Jing; Chiu, Shu-Yu; Ko, Hsien-Tang

    2014-01-01

    The purpose of this study is to evaluate the training institution performance and to improve the management of the Manpower Training Project (MTP) administered by the Semiconductor Institute in Taiwan. Much literature assesses the efficiency of an internal training program initiated by a firm, but only little literature studies the efficiency of an external training program led by government. In the study, a hybrid solution of ICA-DEA and ICA-MPI is developed for measuring the efficiency and the productivity growth of each training institution over the period. The technical efficiency change, the technological change, pure technical efficiency change, scale efficiency change, and the total factor productivity change were evaluated according to five inputs and two outputs. According to the results of the study, the training institutions can be classified by their efficiency successfully and the guidelines for the optimal level of input resources can be obtained for each inefficient training institution. The Semiconductor Institute in Taiwan can allocate budget more appropriately and establish withdrawal mechanisms for inefficient training institutions.

  19. Two-dimensional inorganic–organic hybrid semiconductors composed of double-layered ZnS and monoamines with aromatic and heterocyclic aliphatic rings: Syntheses, structures, and properties

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Sujing; Li, Jing, E-mail: jingli@rutgers.edu

    2015-04-15

    As an addition to the II–VI based inorganic–organic hybrid semiconductor family, five new two-dimensional (2D) double-layered structures have been synthesized employing monoamines with different aromatic or heterocyclic aliphatic rings. Zn{sub 2}S{sub 2}(bza) (1), Zn{sub 2}S{sub 2}(mbza) (2), Zn{sub 2}S{sub 2}(fbza) (3), Zn{sub 2}S{sub 2}(pca) (4), and Zn{sub 2}S{sub 2}(thfa) (5) (bza=benzylamine, mbza=4-methoxybenzylamine, fbza=4-flurobenzylamine, pca=3-picolylamine, and thfa=tetrahydrofurfurylamine) are prepared by solvothermal reactions and characterized by different analytical methods, including powder X-ray diffraction, optical diffuse reflection, thermogravimetric analysis and photoluminescence spectroscopy. The powder X-ray diffraction patterns show that all five compounds adopt 2D double-layered structures. Optical diffuse reflectance spectra of these compounds suggest that they have notably lower band gaps than those of the similar compounds composed of aliphatic alkyl amines. Their photoluminescence properties and thermal stability are also analyzed. - Graphical abstract: Five new members of two-dimensional double-layered 2D-Zn{sub 2}S{sub 2}(L) (L=Ligand) structures employing monoamines with different aromatic or heterocyclic aliphatic rings have been designed, synthesized, and characterized. - Highlights: • A new sub-family of II-VI based hybrid semiconductors are designed, synthesized, and structurally characterized using amines with aromatic or aliphatic cyclic rings. • These compounds have notably lower band gaps than those made of aliphatic alkyl amines, greatly broadening the range of band gaps of this material family. • They emit strongly with systematically tunable emission intensity and energy.

  20. Two-dimensional inorganic–organic hybrid semiconductors composed of double-layered ZnS and monoamines with aromatic and heterocyclic aliphatic rings: Syntheses, structures, and properties

    International Nuclear Information System (INIS)

    Wang, Sujing; Li, Jing

    2015-01-01

    As an addition to the II–VI based inorganic–organic hybrid semiconductor family, five new two-dimensional (2D) double-layered structures have been synthesized employing monoamines with different aromatic or heterocyclic aliphatic rings. Zn 2 S 2 (bza) (1), Zn 2 S 2 (mbza) (2), Zn 2 S 2 (fbza) (3), Zn 2 S 2 (pca) (4), and Zn 2 S 2 (thfa) (5) (bza=benzylamine, mbza=4-methoxybenzylamine, fbza=4-flurobenzylamine, pca=3-picolylamine, and thfa=tetrahydrofurfurylamine) are prepared by solvothermal reactions and characterized by different analytical methods, including powder X-ray diffraction, optical diffuse reflection, thermogravimetric analysis and photoluminescence spectroscopy. The powder X-ray diffraction patterns show that all five compounds adopt 2D double-layered structures. Optical diffuse reflectance spectra of these compounds suggest that they have notably lower band gaps than those of the similar compounds composed of aliphatic alkyl amines. Their photoluminescence properties and thermal stability are also analyzed. - Graphical abstract: Five new members of two-dimensional double-layered 2D-Zn 2 S 2 (L) (L=Ligand) structures employing monoamines with different aromatic or heterocyclic aliphatic rings have been designed, synthesized, and characterized. - Highlights: • A new sub-family of II-VI based hybrid semiconductors are designed, synthesized, and structurally characterized using amines with aromatic or aliphatic cyclic rings. • These compounds have notably lower band gaps than those made of aliphatic alkyl amines, greatly broadening the range of band gaps of this material family. • They emit strongly with systematically tunable emission intensity and energy

  1. New highly fluorescent biolabels based on II-VI semiconductor hybrid organic-inorganic nanostructures for bioimaging

    International Nuclear Information System (INIS)

    Santos, B.S.; Farias, P.M.A.; Menezes, F.D.; Brasil, A.G.; Fontes, A.; Romao, L.; Amaral, J.O.; Moura-Neto, V.; Tenorio, D.P.L.A.; Cesar, C.L.; Barbosa, L.C.; Ferreira, R.

    2008-01-01

    Semiconductor quantum dots based on II-VI materials may be prepared to develop good biolabeling properties. In this study we present some well-succeeded results related to the preparation, functionalization and bioconjugation of CdY (Y = S, Se and Te) to biological systems (live cells and fixed tissues). These nanostructured materials were prepared using colloidal synthesis in aqueous media resulting nanoparticles with very good optical properties and an excellent resistance to photodegradation

  2. [CH(3)(CH(2))(11)NH(3)]SnI(3): a hybrid semiconductor with MoO(3)-type tin(II) iodide layers.

    Science.gov (United States)

    Xu, Zhengtao; Mitzi, David B

    2003-10-20

    The organic-inorganic hybrid [CH(3)(CH(2))(11)NH(3)]SnI(3) presents a lamellar structure with a Sn-I framework isotypic to that of MoO(3). The SnI(3)(-) layer consists of edge and corner-sharing SnI(6) octahedra in which one of the six Sn-I bonds is distinctly elongated (e.g., 3.62 A), indicating lone-pair stereoactivity for the Sn(II) atom. The overall electronic character remains comparable with that of the well-studied SnI(4)(2)(-)-based perovskite semiconductors, such as [CH(3)(CH(2))(11)NH(3)](2)SnI(4), with a red-shifted and broadened exciton peak associated with the band gap, apparently due to the increased dimensionality of the Sn-I framework. The title compound offers, aside from the hybrid perovskites, a new type of solution-processable Sn-I network for potential applications in semiconductive devices.

  3. Hybrid p-n junction light-emitting diodes based on sputtered ZnO and organic semiconductors

    International Nuclear Information System (INIS)

    Na, Jong H.; Kitamura, M.; Arita, M.; Arakawa, Y.

    2009-01-01

    We fabricated light-emitting hybrid p-n junction devices using low temperature deposited ZnO and organic films, in which the ZnO and the organic films served as the n- and p-type component, respectively. The devices have a rectification factor as high as ∼10 3 and a current density greater than 2 A/cm 2 . Electroluminescence of the hybrid device shows the mixture of the emission bands arising from radiative charge recombination in organic and ZnO. The substantial device properties could provide various opportunities for low cost and large area multicolor light-emitting sources.

  4. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

    Science.gov (United States)

    2015-07-16

    catalyzed on either a copper foil or on nickel coated substrates. The graphene must be transferred off of these substrates and then on to the DBR/spacer to...properties of graphene in both the exfoliated single layer graphene (SLG) and few layer graphene (FLG) flakes . Sun et al. make use of bile salts to...semiconductors and dielectrics is the transfer of CVD graphene grown on copper foils. The graphene is grown on thin Cu-foils by CVD using methane and

  5. Self-starting and overclocking a harmonically mode-locking WRC-FPLD with a dual-loop feedback controller for 10 Gb s−1 pulse-data transmission

    International Nuclear Information System (INIS)

    Lin, Chun-Ju; Chi, Yu-Chieh; Lin, Gong-Ru

    2013-01-01

    The self-starting and overclocking of a harmonically mode-locked weak-resonant-cavity Fabry–Perot laser diode (WRC-FPLD) with a dual-loop coupled optoelectronic oscillator (COEO) based feedback controller is demonstrated to perform a clock-free pulsed data transmission at 10 Gb s −1 . The WRC-FPLD is considered as the preferred candidate for harmonic mode-locking due to its highly asymmetric cavity architecture, whereby the spontaneous noise can be significantly suppressed without inducing large intra-cavity loss. With the dual-loop COEO configuration, the WRC-FPLD can be boosted to four times of its original modulation bandwidth such that the pulsed carrier quality can be refined. The structure-optimizing principle with the closed-loop model is corroborated by the effective spurious-noise-suppression. The lowest phase noises as low as −100 dBc Hz −1 at 10 kHz with corresponding RMS timing jitter of 0.67 ps are measured. This is achieved by individually inserting 100 and 120 m long single mode fiber segments into two decoupled arms, the dual-loop COEO before the optical receiver pair. The BER performance reaches a minimum with the optimized SMF segment lengths. However, the spurious peaks arise to degrade the BER performance as the phase noise and jitter are inevitably enlarged when inserting longer SMF segments. After modulating the optimized output pulse train with the pseudo-random-bit-sequence data triggered by the same COEO clock, the SNR can achieve 10.9 dB and the receiving sensitivity is −19.2 dBm. (letter)

  6. Self-assembled hybrid materials based on conjugated polymers and semiconductors nano-crystals for plastic solar cells

    International Nuclear Information System (INIS)

    Girolamo, J. de

    2007-11-01

    This work is devoted to the elaboration of self-assembled hybrid materials based on poly(3- hexyl-thiophene) and CdSe nano-crystals for photovoltaic applications. For that, complementary molecular recognition units were introduced as side chain groups on the polymer and at the nano-crystals' surface. Diamino-pyrimidine groups were introduced by post-functionalization of a precursor copolymer, namely poly(3-hexyl-thiophene-co-3- bromo-hexyl-thiophene) whereas thymine groups were introduced at the nano-crystals' surface by a ligand exchange reaction with 1-(6-mercapto-hexyl)thymine. However, due to their different solubility, the mixing of the two components by solution processes is difficult. A 'one-pot' procedure was developed, but this method led to insoluble aggregates without control of the hybrid composition. To overcome the solubility problem, the layer-by-layer method was used to prepare the films. This method allows a precise control of the deposition process. Experimental parameters were tested in order to evaluate their impact on the resulting film. The films morphology was investigated by microscopy and X-Ray diffraction techniques. These analyses reveal an interpenetrated structure of nano-crystals within the polymer matrix rather than a multilayered structure. Electrochemical and spectro electrochemical studies were performed on the hybrid material deposited by the LBL process. Finally the materials were tested in a solar cell configuration and the I=f(V) curves reveals a clear photovoltaic behaviour. (author)

  7. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    International Nuclear Information System (INIS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-01-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

  8. Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer.

    Science.gov (United States)

    Jung, Soon-Won; Choi, Jeong-Seon; Park, Jung Ho; Koo, Jae Bon; Park, Chan Woo; Na, Bock Soon; Oh, Ji-Young; Lim, Sang Chul; Lee, Sang Seok; Chu, Hye Yong

    2016-03-01

    We demonstrate flexible organic/inorganic hybrid thin-film transistors (TFTs) on a polydimethysilox- ane (PDMS) elastomer substrate. The active channel and gate insulator of the hybrid TFT are composed of In-Ga-Zn-O (IGZO) and blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF- TrFE)] with poly(methyl methacrylate) (PMMA), respectively. It has been confirmed that the fabri- cated TFT display excellent characteristics: the recorded field-effect mobility, sub-threshold voltage swing, and I(on)/I(off) ratio were approximately 0.35 cm2 V(-1) s(-1), 1.5 V/decade, and 10(4), respectively. These characteristics did not experience any degradation at a bending radius of 15 mm. These results correspond to the first demonstration of a hybrid-type TFT using an organic gate insulator/oxide semiconducting active channel structure fabricated on PDMS elastomer, and demonstrate the feasibility of a promising device in a flexible electronic system.

  9. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    Energy Technology Data Exchange (ETDEWEB)

    Jovanović, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

    2014-04-07

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  10. Ferrimagnetic resonance study on photo-induced magnetism in hybrid magnetic semiconductor V(TCNE)x, x ˜2 film

    Science.gov (United States)

    Yoo, Jung-Woo; Shima Edelstein, R.; Lincoln, D. M.; Epstein, A. J.

    2007-03-01

    The V(TCNE)x, x˜2 is a fully spin-polarized magnetic semiconductor, whose magnetic order exceeds room temperature (Tc > 350 K), and electronic transport follows hopping mechanism through the Coulomb energy split &*circ; subband. In addition, it was determined that this material has thermally reversible persistent change in both magnetism and conductivity driven by the optical excitation [1]. Here, we report detailed investigation on photo-induced magnetism in V(TCNE)x by employing ferrimagnetic resonance (PIFMR) study with an in-situ light illumination. Upon optical excitation (λ˜ 457.9 nm), the FMR spectra display substantial change in their linewidth and resonance field. Angular dependence analyses of line shift indicate the increase of unixial anisotropy field in the film caused by the light irradiation. The results demonstrated that the change in overall magnetic anisotropy by the illumination plays an important role in inducing photo- induced magnetism in (TCNE) class magnet. [1] J.-W. Yoo, et al. to be published in Phys. Rev. Lett.

  11. Dynamism in a Semiconductor Industrial Machine Allocation Problem using a Hybrid of the Bio-inspired and Musical-Harmony Approach

    Science.gov (United States)

    Kalsom Yusof, Umi; Nor Akmal Khalid, Mohd

    2015-05-01

    Semiconductor industries need to constantly adjust to the rapid pace of change in the market. Most manufactured products usually have a very short life cycle. These scenarios imply the need to improve the efficiency of capacity planning, an important aspect of the machine allocation plan known for its complexity. Various studies have been performed to balance productivity and flexibility in the flexible manufacturing system (FMS). Many approaches have been developed by the researchers to determine the suitable balance between exploration (global improvement) and exploitation (local improvement). However, not much work has been focused on the domain of machine allocation problem that considers the effects of machine breakdowns. This paper develops a model to minimize the effect of machine breakdowns, thus increasing the productivity. The objectives are to minimize system unbalance and makespan as well as increase throughput while satisfying the technological constraints such as machine time availability. To examine the effectiveness of the proposed model, results for throughput, system unbalance and makespan on real industrial datasets were performed with applications of intelligence techniques, that is, a hybrid of genetic algorithm and harmony search. The result aims to obtain a feasible solution to the domain problem.

  12. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  13. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  14. Single molecule localization imaging of telomeres and centromeres using fluorescence in situ hybridization and semiconductor quantum dots.

    Science.gov (United States)

    Wang, Le; Zong, Shenfei; Wang, Zhuyuan; Lu, Ju; Chen, Chen; Zhang, Ruohu; Cui, Yiping

    2018-07-13

    Single molecule localization microscopy (SMLM) is a powerful tool for imaging biological targets at the nanoscale. In this report, we present SMLM imaging of telomeres and centromeres using fluorescence in situ hybridization (FISH). The FISH probes were fabricated by decorating CdSSe/ZnS quantum dots (QDs) with telomere or centromere complementary DNA strands. SMLM imaging experiments using commercially available peptide nucleic acid (PNA) probes labeled with organic fluorophores were also conducted to demonstrate the advantages of using QDs FISH probes. Compared with the PNA probes, the QDs probes have the following merits. First, the fluorescence blinking of QDs can be realized in aqueous solution or PBS buffer without thiol, which is a key buffer component for organic fluorophores' blinking. Second, fluorescence blinking of the QDs probe needs only one excitation light (i.e. 405 nm). While fluorescence blinking of the organic fluorophores usually requires two illumination lights, that is, the activation light (i.e. 405 nm) and the imaging light. Third, the high quantum yield, multiple switching times and a good optical stability make the QDs more suitable for long-term imaging. The localization precision achieved in telomeres and centromeres imaging experiments is about 30 nm, which is far beyond the diffraction limit. SMLM has enabled new insights into telomeres or centromeres on the molecular level, and it is even possible to determine the length of telomere and become a potential technique for telomere-related investigation.

  15. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  16. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  17. High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Xianshu eLuo

    2015-04-01

    Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

  18. Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

    Energy Technology Data Exchange (ETDEWEB)

    Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany); Gaafar, M.; Vaupel, M.; Stolz, W.; Rahimi-Iman, A.; Koch, M. [Department of Physics and Materials Science Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

    2015-07-27

    We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g{sup (2)}(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.

  19. All-fiber interferometer-based repetition-rate stabilization of mode-locked lasers to 10-14-level frequency instability and 1-fs-level jitter over 1  s.

    Science.gov (United States)

    Kwon, Dohyeon; Kim, Jungwon

    2017-12-15

    We report on all-fiber Michelson interferometer-based repetition-rate stabilization of femtosecond mode-locked lasers down to 1.3×10 -14 frequency instability and 1.4 fs integrated jitter in a 1 s time scale. The use of a compactly packaged 10 km long single-mode fiber (SMF)-28 fiber link as a timing reference allows the scaling of phase noise at a 10 GHz carrier down to -80  dBc/Hz at 1 Hz Fourier frequency. We also tested a 500 m long low-thermal-sensitivity fiber as a reference and found that, compared to standard SMF-28 fiber, it can mitigate the phase noise divergence by ∼10  dB/dec in the 0.1-1 Hz Fourier frequency range. These results suggest that the use of a longer low-thermal-sensitivity fiber may achieve sub-femtosecond integrated timing jitter with sub-10 -14 -level frequency instability in repetition rate by a simple and robust all-fiber-photonic method.

  20. Retraction of “Accurate Prediction of Essential Fundamental Properties for Semiconductors Used in Solar-Energy Conversion Devices from Range-Separated Hybrid Density Functional Theory”

    KAUST Repository

    Harb, Moussab

    2016-01-01

    The author retracts this article due to similarities with a previously published article by Le Bahers, T.; Rerat, M.; Sautet, ́ P. Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT. J. Phys

  1. Epitaxy of semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Krogstrup, P.; Ziino, N.L.B.; Chang, W.

    2015-01-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...

  2. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  3. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  4. Delay induced high order locking effects in semiconductor lasers

    Science.gov (United States)

    Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

    2017-11-01

    Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

  5. Retraction of “Accurate Prediction of Essential Fundamental Properties for Semiconductors Used in Solar-Energy Conversion Devices from Range-Separated Hybrid Density Functional Theory”

    KAUST Repository

    Harb, Moussab

    2016-03-08

    The author retracts this article due to similarities with a previously published article by Le Bahers, T.; Rerat, M.; Sautet, ́ P. Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT. J. Phys. Chem. C 2014, 118 (12), 5997−6008 (DOI: 10.1021/jp409724c).

  6. Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

    Science.gov (United States)

    Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

    2016-03-01

    We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

  7. Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

    Science.gov (United States)

    Link, S M; Maas, D J H C; Waldburger, D; Keller, U

    2017-06-16

    Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications. Copyright © 2017, American Association for the Advancement of Science.

  8. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  9. Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope.

    Science.gov (United States)

    Hagmann, Mark J; Yarotski, Dmitry A; Mousa, Marwan S

    2017-04-01

    Quasi-periodic excitation of the tunneling junction in a scanning tunneling microscope, by a mode-locked ultrafast laser, superimposes a regular sequence of 15 fs pulses on the DC tunneling current. In the frequency domain, this is a frequency comb with harmonics at integer multiples of the laser pulse repetition frequency. With a gold sample the 200th harmonic at 14.85 GHz has a signal-to-noise ratio of 25 dB, and the power at each harmonic varies inversely with the square of the frequency. Now we report the first measurements with a semiconductor where the laser photon energy must be less than the bandgap energy of the semiconductor; the microwave frequency comb must be measured within 200 μm of the tunneling junction; and the microwave power is 25 dB below that with a metal sample and falls off more rapidly at the higher harmonics. Our results suggest that the measured attenuation of the microwave harmonics is sensitive to the semiconductor spreading resistance within 1 nm of the tunneling junction. This approach may enable sub-nanometer carrier profiling of semiconductors without requiring the diamond nanoprobes in scanning spreading resistance microscopy.

  10. Synthesis, optical properties and photostability of novel fluorinated organic–inorganic hybrid (R–NH3)2PbX4 semiconductors

    International Nuclear Information System (INIS)

    Wei, Y; Lauret, J-S; Deleporte, E; Audebert, P; Galmiche, L

    2013-01-01

    We report on the synthesis and the optical properties of several novel semiconductors (R–NH 3 ) 2 PbX 4 (X = Br − , I − or Cl − ). These semiconductors are two-dimensional organic–inorganic perovskite (2DOIP) materials and have multiple quantum-well energy level structures. We vary the organic components (R-NH 3 + ), introducing fluorine atoms into the organic part, on the phenyl ring of the amine. We discuss its influence on the self-organization ability and long-term photostability of the 2DOIPs. The trends of introducing fluorine atoms on the self-organization and long-term photostability of 2DOIPs are obtained by analysing the optical experimental results, and show that the influence of the fluorine position on the benzene ring is quite important. The most promising compounds seem to be the ones with the fluorine atom sitting on the para position of the phenyl group. (paper)

  11. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  12. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  13. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  14. Toward the hybrid organic semiconductor FET (HOSFET) electrical and electrochemical characterization of functionalized and unfunctionalized, covalently bound organic monolayers on silicon

    NARCIS (Netherlands)

    Faber, Erik Jouwert

    2006-01-01

    Since their introduction in 1993 the class of covalently bound organic monolayers on oxide free silicon surfaces have found their way to multiple application fields such as passivation layers in solar cells, masking layers in lithographic processing, insulating films in hybrid moleculesilicon

  15. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  16. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  17. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  18. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  19. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  20. Effect of Thermal and Structural Disorder on the Electronic Structure of Hybrid Perovskite Semiconductor CH3NH3PbI3.

    Science.gov (United States)

    Singh, Shivam; Li, Cheng; Panzer, Fabian; Narasimhan, K L; Graeser, Anna; Gujar, Tanaji P; Köhler, Anna; Thelakkat, Mukundan; Huettner, Sven; Kabra, Dinesh

    2016-08-04

    In this Letter, we investigate the temperature dependence of the optical properties of methylammonium lead iodide (MAPbI3 = CH3NH3PbI3) from room temperature to 6 K. In both the tetragonal (T > 163 K) and the orthorhombic (T photoluminescence (PL) measurements) decreases with decrease in temperature, in contrast to what is normally seen for many inorganic semiconductors, such as Si, GaAs, GaN, etc. We show that in the perovskites reported here, the temperature coefficient of thermal expansion is large and accounts for the positive temperature coefficient of the band gap. A detailed analysis of the exciton line width allows us to distinguish between static and dynamic disorder. The low-energy tail of the exciton absorption is reminiscent of Urbach absorption. The Urbach energy is a measure of the disorder, which is modeled using thermal and static disorder for both the phases separately. The static disorder component, manifested in the exciton line width at low temperature, is small. Above 60 K, thermal disorder increases the line width. Both these features are a measure of the high crystal quality and low disorder of the perovskite films even though they are produced from solution.

  1. Multifunctional uranyl hybrid materials: structural diversities as a function of pH, luminescence with potential nitrobenzene sensing, and photoelectric behavior as p-type semiconductors.

    Science.gov (United States)

    Song, Jian; Gao, Xue; Wang, Zhi-Nan; Li, Cheng-Ren; Xu, Qi; Bai, Feng-Ying; Shi, Zhong-Feng; Xing, Yong-Heng

    2015-09-21

    A series of uranyl-organic frameworks (UOFs), {[(UO2)2(H2TTHA)(H2O)]·4,4'-bipy·2H2O}n (1), {[(UO2)3(TTHA)(H2O)3]}n (2), and {[(UO2)5(TTHA) (HTTHA)(H2O)3]·H3O}n (3), have been obtained by the hydrothermal reaction of uranyl acetate with a flexible hexapodal ligand (1,3,5-triazine-2,4,6-triamine hexaacetic acid, H6TTHA). These compounds exhibited three distinct 3D self-assembly architectures as a function of pH by single-crystal structural analysis, although the used ligand was the same in each reaction. Surprisingly, all of the coordination modes of the H6TTHA ligand in this work are first discovered. Furthermore, the photoluminescent results showed that these compounds displayed high-sensitivity luminescent sensing functions for nitrobenzene. Additionally, the surface photovoltage spectroscopy and electric-field-induced surface photovoltage spectroscopy showed that compounds 1-3 could behave as p-type semiconductors.

  2. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  3. Functionalized Self-Assembled InAs/GaAs Quantum-Dot Structures Hybridized with Organic Molecules

    DEFF Research Database (Denmark)

    Chen, Miaoxiang Max; Kobashi, K.; Chen, B.

    2010-01-01

    Low-dimensional III-V semiconductors have many advantages over other semiconductors; however, they are not particularly stable under physiological conditions. Hybridizing biocompatible organic molecules with advanced optical and electronic semiconductor devices based on quantum dots (QDs...

  4. Self-assembled hybrid materials based on conjugated polymers and semiconductors nano-crystals for plastic solar cells; Architectures hybrides auto-assemblees a base de systemes polyconjugues et de nanocristaux de semi-conducteurs pour le photovoltaique plastique

    Energy Technology Data Exchange (ETDEWEB)

    Girolamo, J. de

    2007-11-15

    This work is devoted to the elaboration of self-assembled hybrid materials based on poly(3- hexyl-thiophene) and CdSe nano-crystals for photovoltaic applications. For that, complementary molecular recognition units were introduced as side chain groups on the polymer and at the nano-crystals' surface. Diamino-pyrimidine groups were introduced by post-functionalization of a precursor copolymer, namely poly(3-hexyl-thiophene-co-3- bromo-hexyl-thiophene) whereas thymine groups were introduced at the nano-crystals' surface by a ligand exchange reaction with 1-(6-mercapto-hexyl)thymine. However, due to their different solubility, the mixing of the two components by solution processes is difficult. A 'one-pot' procedure was developed, but this method led to insoluble aggregates without control of the hybrid composition. To overcome the solubility problem, the layer-by-layer method was used to prepare the films. This method allows a precise control of the deposition process. Experimental parameters were tested in order to evaluate their impact on the resulting film. The films morphology was investigated by microscopy and X-Ray diffraction techniques. These analyses reveal an interpenetrated structure of nano-crystals within the polymer matrix rather than a multilayered structure. Electrochemical and spectro electrochemical studies were performed on the hybrid material deposited by the LBL process. Finally the materials were tested in a solar cell configuration and the I=f(V) curves reveals a clear photovoltaic behaviour. (author)

  5. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  6. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  7. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

    Science.gov (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-07-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  8. METHODOLOGICAL NOTES: Integrating magnetism into semiconductor electronics

    Science.gov (United States)

    Zakharchenya, Boris P.; Korenev, Vladimir L.

    2005-06-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

  9. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  10. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  11. Fundamental investigation of hybrid high-temperature superconductor-semiconductor sensors for magnetic signals in non-destructive evaluation. Final report; Grundlegende Untersuchungen hybrider Hochtemperatursupraleiter-Halbleiter-Magnetfelddetektoren auf Siliziumsubstraten fuer Anwendungen in der zerstoerungsfreien Pruefung. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, P.; Schmidl, F.; Linzen, S.; Schmidt, F.; Scherbel, J.

    2002-11-01

    A new magnetic sensor was realized using a Hall magnetometer coupled to an antenna out of high-temperature superconducting material. The resolution of the magnetometer was improved and a noise-limited field resolution of the system of 2.7 nT/{radical}(Hz) was obtained. The necessary thin film technology was developed and optimized. Further improvements will result in 0.5 nT/{radical}(Hz). The sensors were realized as single sensors as well as sensor arrays and successfully tested in a system for non-destructive evaluation. Within this system the cooling was established by a cryocooler which also cools down the electronics to about 80 K. (orig.) [German] Es wurde ein neuartiger Magnetfeldsensor realisiert, bei dem ein Hallmagnetometer mit einer Antenne aus Hochtemperatursupraleitenden Material gekoppelt wird. Die Magnetometerempfindlichkeit wird dadurch kiar verbessert und eine rauschbegrenzte Feldaufloesung des Systems von 2,7 nT{radical}(/Hz) erreicht. Die zur Herstellung noetige hybride Duennschichttechnologie wurde entwickelt und optimiert. Durch Layoutverbesserungen erscheinen Aufloesungen von 0,5 nT/{radical}(Hz) realisierbar. Die Sensoren wurden als Einzelsensor und Sensorarrays realisiert und in einer Anlage zur zerstoerungsfreien Pruefung erfolgreich getestet. Dabei erfolgte die Kuehlung mittels Kleinkuehler, der auch die Verarbeitungselektronik auf 80 K kuehlt. (orig.)

  12. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  13. Magnetoresistance effects in hybrid semiconductor devices

    NARCIS (Netherlands)

    Schoonus, J.J.H.M.

    2008-01-01

    Until recently, mainstream electronics was exclusively based on charge proper- ties. Apart from charge, an electron also possesses an intrinsic angular momen- tum (spin), and directly coupled to that a magnetic moment. A newly emerg- ing approach is to use this extra spin degree of freedom to

  14. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  15. Hybrid polymer-inorganic photovoltaic cells

    NARCIS (Netherlands)

    Beek, W.J.E.; Janssen, R.A.J.; Merhari, L.

    2009-01-01

    Composite materials made from organic conjugated polymers and inorganic semiconductors such as metal oxides attract considerable interest for photovoltaic applications. Hybrid polymer-inorganic solar cells offer the opportunity to combine the beneficial properties of the two materials in charge

  16. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  17. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  18. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  19. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  20. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  1. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  2. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  3. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  4. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  5. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  6. Mode locking and spatiotemporal chaos in periodically driven Gunn diodes

    DEFF Research Database (Denmark)

    Mosekilde, Erik; Feldberg, Rasmus; Knudsen, Carsten

    1990-01-01

    oscillation entrains with the external signal. This produces a devil’s staircase of frequency-locked solutions. At higher microwave amplitudes, period doubling and other forms of mode-converting bifurcations can be seen. In this interval the diode also exhibits spatiotemporal chaos. At still higher microwave...

  7. Renormalization, unstable manifolds, and the fractal structure of mode locking

    International Nuclear Information System (INIS)

    Cvitanovic, P.; Jensen, M.H.; Kadanoff, L.P.; Procaccia, I.

    1985-01-01

    The apparent universality of the fractal dimension of the set of quasiperiodic windings at the onset of chaos in a wide class of circle maps is described by construction of a universal one-parameter family of maps which lies along the unstable manifold of the renormalization group. The manifold generates a universal ''devil's staircase'' whose dimension agrees with direct numerical calculations. Applications to experiments are discussed

  8. Exact treatment of mode locking for a piecewise linear map

    International Nuclear Information System (INIS)

    Ding, E.J.; Hemmer, P.C.

    1987-01-01

    A piecewise linear map with one discontinuity is studied by analytic means in the two-dimensional parameter space. When the slope of the map is less than unity, periodic orbits are present, and they give the precise symbolic dynamic classification of these. The localization of the periodic domains in parameter space is given by closed expressions. The winding number forms a devil's terrace, a two-dimensional function whose cross sections are complete devil's staircases. In such a cross section the complementary set to the periodic intervals is a Cantor set with dimension D = 0

  9. Raman-Assisted Passively Mode-Locked Fiber Laser

    Science.gov (United States)

    Zhao, Lei; Yao, Pei-Jun; Gu, Chun; Xu, Li-Xin

    2018-04-01

    Not Available Supported by the National Natural Science Foundation of China under Grant No 61675188, and the Open Fund of Key Laboratory Pulse Power Laser Technology of China under Grant No SKL2016KF03.

  10. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  11. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  12. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  13. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  14. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  15. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  16. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  17. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  18. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  19. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  20. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs