WorldWideScience

Sample records for hybrid microelectronic circuits

  1. Microelectronic circuit design for energy harvesting systems

    CERN Document Server

    Di Paolo Emilio, Maurizio

    2017-01-01

    This book describes the design of microelectronic circuits for energy harvesting, broadband energy conversion, new methods and technologies for energy conversion. The author also discusses the design of power management circuits and the implementation of voltage regulators. Coverage includes advanced methods in low and high power electronics, as well as principles of micro-scale design based on piezoelectric, electromagnetic and thermoelectric technologies with control and conditioning circuit design. Provides a single-source reference to energy harvesting and its applications; Serves as a practical guide to microelectronics design for energy harvesting, with application to mobile power supplies; Enables readers to develop energy harvesting systems for wearable/mobile electronics.

  2. Temperature-independent resistor for microelectronic circuits

    Science.gov (United States)

    Aegerter, S.; Libby, W. F.

    1970-01-01

    Heat treating insulating crystals in gaseous hydrogen atmosphere produce resistive device which is temperature-independent from 77 to 295 degrees K. Increasing the concentration of hydrogen within the crystal yields semiconductor, hybrid, and metallic conduction characteristics which are combined with a depletion layer at the surface.

  3. Active Trimming of Hybrid Integrated Circuits

    OpenAIRE

    Németh, P.; Krémer, P.

    1984-01-01

    One of the more important fields of the microelectronics industry is the manufacturing of hybrid integrated circuits.An important part of the manufacturing process is concerned with the trimming of the hybrid integratedl circuits. This article deals with the basic principles of active trimming and introduces a microprocessor controlled trimming machine. By comparing active trimming with passive techniques, it can be shown that the active system has some advantages. This article outlines these...

  4. Microwaves integrated circuits: hybrids and monolithics - fabrication technology

    International Nuclear Information System (INIS)

    Cunha Pinto, J.K. da

    1983-01-01

    Several types of microwave integrated circuits are presented together with comments about technologies and fabrication processes; advantages and disadvantages in their utilization are analysed. Basic structures, propagation modes, materials used and major steps in the construction of hybrid thin film and monolithic microwave integrated circuits are described. Important technological applications are revised and main activities of the microelectronics lab. of the University of Sao Paulo (Brazil) in the field of hybrid and monolithic microwave integrated circuits are summarized. (C.L.B.) [pt

  5. Synthesis of the System Modeling and Signal Detecting Circuit of a Novel Vacuum Microelectronic Accelerometer

    Directory of Open Access Journals (Sweden)

    Zhengguo Shang

    2009-05-01

    Full Text Available A novel high-precision vacuum microelectronic accelerometer has been successfully fabricated and tested in our laboratory. This accelerometer has unique advantages of high sensitivity, fast response, and anti-radiation stability. It is a prototype intended for navigation applications and is required to feature micro-g resolution. This paper briefly describes the structure and working principle of our vacuum microelectronic accelerometer, and the mathematical model is also established. The performances of the accelerometer system are discussed after Matlab modeling. The results show that, the dynamic response of the accelerometer system is significantly improved by choosing appropriate parameters of signal detecting circuit, and the signal detecting circuit is designed. In order to attain good linearity and performance, the closed-loop control mode is adopted. Weak current detection technology is studied, and integral T-style feedback network is used in I/V conversion, which will eliminate high-frequency noise at the front of the circuit. According to the modeling parameters, the low-pass filter is designed. This circuit is simple, reliable, and has high precision. Experiments are done and the results show that the vacuum microelectronic accelerometer exhibits good linearity over -1 g to +1 g, an output sensitivity of 543 mV/g, and a nonlinearity of 0.94 %.

  6. Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

    DEFF Research Database (Denmark)

    Katsia, E.; Huby, N.; Tallarida, G.

    2009-01-01

    Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V...

  7. Microelectronics and nanoelectronics trends, and applications to HEP instrumentation

    CERN Multimedia

    CERN. Geneva

    2004-01-01

    Lecture 1 : Microelectronics and HEP instrumentation CMOS technology has been the leading technology in microelectronics for more that 30 years thanks to its outstanding capability to miniaturization and low power consumption. A brief history of the microelectronics semiconductor industry is presented with applications for LEP and LHC experiments. Lecture 2: Future trends in microelectronics and nanoelectronics Trends in miniaturization point to the fabrication of ULSI nanoscale CMOS circuits by the end of the decade. Device issues and quantum effects in nanoscale MOS transistor will be discussed. Beyond CMOS technology, several technology avenues based on nanotechnology are under investigation. We will present some promising nanoelectronic devices and circuits based on Single Electron Tunneling (SET) transistor, nanowire, quantum dot and carbon nanotubes. Lecture 3: Monolithic pixel detectors Microvertex detectors for particle physics experiments currently uses hybrid silicon pixel detector. Novel emerging m...

  8. Microelectronic packaging

    CERN Document Server

    Datta, M; Schultze, J Walter

    2004-01-01

    Microelectronic Packaging analyzes the massive impact of electrochemical technologies on various levels of microelectronic packaging. Traditionally, interconnections within a chip were considered outside the realm of packaging technologies, but this book emphasizes the importance of chip wiring as a key aspect of microelectronic packaging, and focuses on electrochemical processing as an enabler of advanced chip metallization.Divided into five parts, the book begins by outlining the basics of electrochemical processing, defining the microelectronic packaging hierarchy, and emphasizing the impac

  9. Integration of microelectronic chips in microfluidic systems on printed circuit board

    International Nuclear Information System (INIS)

    Burdallo, I; Jimenez-Jorquera, C; Fernández-Sánchez, C; Baldi, A

    2012-01-01

    A new scheme for the integration of small semiconductor transducer chips with microfluidic structures on printed circuit board (PCB) is presented. The proposed approach is based on a packaging technique that yields a large and flat area with small and shallow (∼44 µm deep) openings over the chips. The photocurable encapsulant material used, based on a diacrylate bisphenol A polymer, enables irreversible bonding of polydimethylsiloxane microfluidic structures at moderate temperatures (80 °C). This integration scheme enables the insertion of transducer chips in microfluidic systems with a lower added volume than previous schemes. Leakage tests have shown that the bonded structures withstand more than 360 kPa of pressure. A prototype microfluidic system with two detection chips, including one inter-digitated electrode (IDE) chip for conductivity and one ion selective field effect transistor (ISFET) chip for pH, has been implemented and characterized. Good electrical insulation of the chip contacts and silicon edge surfaces from the solution in the microchannels has been achieved. This integration procedure opens the door to the low-cost fabrication of complex analytical microsystems that combine the extraordinary potential of both the microfluidics and silicon microtechnology fields. (paper)

  10. Hybrid CMOS/Molecular Integrated Circuits

    Science.gov (United States)

    Stan, M. R.; Rose, G. S.; Ziegler, M. M.

    CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

  11. Circuit QED with hybrid metamaterial transmission lines

    Energy Technology Data Exchange (ETDEWEB)

    Ruloff, Stefan; Taketani, Bruno; Wilhelm, Frank [Theoretical Physics, Universitaet des Saarlandes, Saarbruecken (Germany)

    2016-07-01

    We're working on the theory of metamaterials providing some interesting results. The negative refraction index causes an opposite orientation of the wave vector k and the Poynting vector S of the travelling waves. Hence the metamaterial has a falling dispersion relation ∂ω(k)/∂k < 0 implying that low frequencies correspond to short wavelengths. Metamaterials are simulated by left-handed transmission lines consisting of discrete arrays of series capacitors and parallel inductors to ground. Unusual physics arises when right-and left-handed transmission lines are coupled forming a hybrid metamaterial transmission line. E.g. if a qubit is placed in front of a hybrid metamaterial transmission line terminated in an open circuit, the spontaneous emission rate is weakened or unaffected depending on the transition frequency of the qubit. Some other research interests are the general analysis of metamaterial cavities and the mode structure of hybrid metamaterial cavities for QND readout of multi-qubit operators. Especially the precise answer to the question about the definition of the mode volume of a metamaterial cavity is one of our primary goals.

  12. Giant microelectronics

    International Nuclear Information System (INIS)

    Della Sala, D.; Privato, C.; Di Lazzaro, P.; Fortunato, G.

    1999-01-01

    Giant microelectronics, on which the technology of flat liquid-crystal screens is based, is an example of fruitful interaction among independently-developed technologies, in this case thin film micro devices and laser applications. It typifies the interdisciplinary approach needed to produce innovations in microelectronics [it

  13. III-V microelectronics

    CERN Document Server

    Nougier, JP

    1991-01-01

    As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental p

  14. Application specific integrated circuits and hybrid micro circuits for nuclear instrumentation

    International Nuclear Information System (INIS)

    Chandratre, V.B.; Sukhwani, Menka; Mukhopadhyay, P.K.; Shastrakar, R.S.; Sudheer, M.; Shedam, V.; Keni, Anubha

    2009-01-01

    Rapid development in semiconductor technology, sensors, detectors and requirements of high energy physics experiments as well as advances in commercially available nuclear instruments have lead to challenges for instrumentation. These challenges are met with development of Application Specific Integrated Circuits and Hybrid Micro Circuits. This paper discusses various activities in ASIC and HMC development in Bhabha Atomic Research Centre. (author)

  15. Hybrid integrated circuit for charge-to-time interval conversion

    Energy Technology Data Exchange (ETDEWEB)

    Basiladze, S.G.; Dotsenko, Yu.Yu.; Man' yakov, P.K.; Fedorchenko, S.N. (Joint Inst. for Nuclear Research, Dubna (USSR))

    The hybrid integrated circuit for charge-to time interval conversion with nanosecond input fast response is described. The circuit can be used in energy measuring channels, time-to-digital converters and in the modified variant in amplitude-to-digital converters. The converter described consists of a buffer amplifier, a linear transmission circuit, a direct current source and a unit of time interval separation. The buffer amplifier represents a current follower providing low input and high output resistances by the current feedback. It is concluded that the described converter excelled the QT100B circuit analogous to it in a number of parameters especially, in thermostability.

  16. Hybrid Direct-Current Circuit Breaker

    Science.gov (United States)

    Wang, Ruxi (Inventor); Premerlani, William James (Inventor); Caiafa, Antonio (Inventor); Pan, Yan (Inventor)

    2017-01-01

    A circuit breaking system includes a first branch including at least one solid-state snubber; a second branch coupled in parallel to the first branch and including a superconductor and a cryogenic contactor coupled in series; and a controller operatively coupled to the at least one solid-state snubber and the cryogenic contactor and programmed to, when a fault occurs in the load circuit, activate the at least one solid-state snubber for migrating flow of the electrical current from the second branch to the first branch, and, when the fault is cleared in the load circuit, activate the cryogenic contactor for migrating the flow of the electrical current from the first branch to the second branch.

  17. Hybrid Circuit QED with Electrons on Helium

    Science.gov (United States)

    Yang, Ge

    Electrons on helium (eHe) is a 2-dimensional system that forms naturally at the interface between superfluid helium and vacuum. It has the highest measured electron mobility, and long predicted spin coherence time. In this talk, we will first review various quantum computer architecture proposals that take advantage of these exceptional properties. In particular, we describe how electrons on helium can be combined with superconducting microwave circuits to take advantage of the recent progress in the field of circuit quantum electrodynamics (cQED). We will then demonstrate how to reliably trap electrons on these devices hours at a time, at millikelvin temperatures inside a dilution refrigerator. The coupling between the electrons and the microwave resonator exceeds 1 MHz, and can be reproduced from the design geometry using our numerical simulation. Finally, we will present our progress on isolating individual electrons in such circuits, to build single-electron quantum dots with electrons on helium.

  18. A Hybrid, Current-Source/Voltage-Source Power Inverter Circuit

    DEFF Research Database (Denmark)

    Trzynadlowski, Andrzej M.; Patriciu, Niculina; Blaabjerg, Frede

    2001-01-01

    A combination of a large current-source inverter and a small voltage-source inverter circuits is analyzed. The resultant hybrid inverter inherits certain operating advantages from both the constituent converters. In comparison with the popular voltage-source inverter, these advantages include...... reduced switching losses, improved quality of output current waveforms, and faster dynamic response to current control commands. Description of operating principles and characteristics of the hybrid inverter is illustrated with results of experimental investigation of a laboratory model....

  19. Advanced engineering materials and thick film hybrid circuit technology

    International Nuclear Information System (INIS)

    Faisal, S.; Aslam, M.; Mehmood, K.

    2006-01-01

    The use of Thick Film hybrid Technology to manufacture electronic circuits and passive components continues to grow at rapid rate. Thick Film Technology can be viewed as a means of packaging active devices, spanning the gap between monolithic integrated circuit chips and printed circuit boards with attached active and passive components. An advancement in engineering materials has moved from a formulating art to a base of greater understanding of relationship of material chemistry to the details of electrical and mechanical performance. This amazing advancement in the field of engineering materials has brought us up to a magnificent standard that we are able to manufacture small size, low cost and sophisticated electronic circuits of Military, Satellite systems, Robotics, Medical and Telecommunications. (author)

  20. Radiation effects on microelectronics

    International Nuclear Information System (INIS)

    Gover, J.E.

    1987-01-01

    Applications of radiation-hardened microelectronics in nuclear power systems include (a) light water reactor (LWR) containment building, postaccident instrumentation that can operate through the beta and gamma radiation released in a design basis loss-of-coolant accident; (b) advanced LWR instrumentation and control systems employing distributed digital integrated circuit (IC) technology to achieve a high degree of artificial intelligence and thereby reduce the probability of operator error under accident conditions; (c) instrumentation, command, control and communication systems for space nuclear power applications that must operate during the neutron and gamma-ray core leakage environments as well as the background electron, proton, and heavy charged particle environments of space; and (d) robotics systems designed for the described functions. Advanced microelectronics offer advantages in cost and reliability over alternative approaches to instrumentation and control. No semiconductor technology is hard to all classes of radiation effects phenomena. As the effects have become better understood, however, significant progress has been made in hardening IC technology. Application of hardened microelectronics to nuclear power systems has lagged military applications because of the limited market potential of hardened instruments and numerous institutional impediments

  1. Calorimeter Preamplifier Hybrid Circuit Test Jig

    International Nuclear Information System (INIS)

    Abraham, B.M.

    1999-01-01

    There are two ways in which the testing may be initiated, remotely or locally. If the remote operation is desired, an external TTL level signal must be provided to the test jig with the remotellocal switch on the side of the test jig switched to remote. A logic high will initiate the test. A logic low will terminate the test. In the event that an external signal is connected to the test jig while local operation occurs, the local control takes precedence over remote control. Once a DVT has been locked in the ZIF socket and the DIP switches are selected, the Push-to-Test button may be depressed. Momentarily depressing the button will initiate a test with a minimum 400 ms duration. At the same time a PBCLOCK and PBLATCH pulses will be initiated and the power rails +12V, +8V, and -6V will be ramped to full voltage. The time at which the power rails reach the full voltage is about 13 ms and it is synchronized with bypass capacitors placed on COMP input of U20 and U22 and on the output of U23 voltage regulators. The voltage rails are supplied to a ±10% window comparator. A red LED indicates the rail is below or above 10% of the design value. A green LED indicates the rail is within acceptable limits. For DDT with a 5 pF and 10 pF feed back capacitor, the +12V and +8V rails are current-regulated to 19rnA and 22 rnA respectively and the -6V rail is short-circuit protected within the regulator. For DUT with a 22 pF feed back capacitor the current regulation is the same as above except that the +8V rail is current regulated to 43 rnA. The power rails are supplied to the DUT via a 10 (Omega) resistor. The voltage drop across this resistor is sensed by a differential amplifier AD620 and amplified by a gain of 10. An external BNC connection is provided from this point to allow for current measurements by the vendor. The current value for each rail is calculated by measuring the voltage value at this point and divided by (10*10(Omega)). The next stage inverts and amplifies the

  2. Calorimeter Preamplifier Hybrid Circuit Test Jig

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, B.M.; /Fermilab

    1999-04-19

    There are two ways in which the testing may be initiated, remotely or locally. If the remote operation is desired, an external TTL level signal must be provided to the test jig with the remotellocal switch on the side of the test jig switched to remote. A logic high will initiate the test. A logic low will terminate the test. In the event that an external signal is connected to the test jig while local operation occurs, the local control takes precedence over remote control. Once a DVT has been locked in the ZIF socket and the DIP switches are selected, the Push-to-Test button may be depressed. Momentarily depressing the button will initiate a test with a minimum 400 ms duration. At the same time a PBCLOCK and PBLATCH pulses will be initiated and the power rails +12V, +8V, and -6V will be ramped to full voltage. The time at which the power rails reach the full voltage is about 13 ms and it is synchronized with bypass capacitors placed on COMP input of U20 and U22 and on the output of U23 voltage regulators. The voltage rails are supplied to a {+-}10% window comparator. A red LED indicates the rail is below or above 10% of the design value. A green LED indicates the rail is within acceptable limits. For DDT with a 5 pF and 10 pF feed back capacitor, the +12V and +8V rails are current-regulated to 19rnA and 22 rnA respectively and the -6V rail is short-circuit protected within the regulator. For DUT with a 22 pF feed back capacitor the current regulation is the same as above except that the +8V rail is current regulated to 43 rnA. The power rails are supplied to the DUT via a 10 {Omega} resistor. The voltage drop across this resistor is sensed by a differential amplifier AD620 and amplified by a gain of 10. An external BNC connection is provided from this point to allow for current measurements by the vendor. The current value for each rail is calculated by measuring the voltage value at this point and divided by (10*10{Omega}). The next stage inverts and amplifies

  3. Microelectronic systems

    CERN Document Server

    Heuberger, Albert; Hanke, Randolf

    2011-01-01

    This book is dedicated to Prof. Dr. Heinz Gerhauser on the occasion of his retirement both from the position of Executive Director of the Fraunhofer Institute for Integrated Circuits IIS and from the Endowed Chair of Information Technologies with a Focus on Communication Electronics (LIKE) at the Friedrich-Alexander-Universitat Erlangen-Nurnberg. Heinz Gerhauser's vision and entrepreneurial spirit have made the Fraunhofer IIS one of the most successful and renowned German research institutions. He has been Director of the Fraunhofer IIS since 1993, and under his leadership it has grown to beco

  4. Physics in microelectronics and microelectronics in physics

    International Nuclear Information System (INIS)

    Mooser, E.

    1983-01-01

    Modern semiconductor technology and its many different facets such as micro-electronics, optoelectronics, integrated optics, solar energy conversion, etc... have their origin in solid state physics. However, because of their enormous economic impact, their development has been so rapid and has lead to such a high degree of complexity and sophistication, that to the newcomer in the field, the links between solid state electronics and solid state physics are no longer evident. The processes involved in the production of integrated circuits and solid state lasers afford very instructive examples on which to demostrate the impact of physics on semiconductor technology. Processes discussed include: Purification of silicon; Crystal growth; Liquid and vapour phase epitaxy; Photo- and electronbeam lithography; Mask production; Wet and dry etching; Doping and metal deposition, etc... The inverse phenomenon, i.e. the impact of semiconductor technology on physics will be demonstrated on examples involving two-dimensional electron gases. Such gases can readily be obtained in 'synthetic' layer structures, produced by molecular beam epitaxy and in the depletion layers of field-effect transistors with MOS geometry. the examples discussed involve the multiple potential well laser and the 'von Klitzing experiment'. (Author) [pt

  5. Problems in CEMA microelectronic cooperation noted

    Science.gov (United States)

    Grzybowski, J.; Kusinski, J.

    1983-10-01

    The development and market trends of products, which use large scale integrated circuits are discussed. Products such as pocket calculators, electronic wrist watches, telephones, and automobiles are used to illustrate the economic results of market saturation with specialized integrated circuits. The status of microelectronics in socialist countries in Europe is addressed.

  6. Microelectronics in energy technology

    Energy Technology Data Exchange (ETDEWEB)

    Oeding, D; Jesse, G

    1984-07-01

    This meeting, which will take place on the 16th and 17th of October 1984 at the Old Opera House at Frankfurt on Main, in the context of the VDE Congress, will consist of 14 lectures on the state of the application of microelectronics to energy technology, and give its participants information on and a chance for discussion of this subject. The meeting will cover the following subjects: Microelectronics in energy supply undertakings; Microelectronics in the automation of power stations; Microelectronics in switchgear and transmission networks; Microelectronics in measurement technology; Microelectronics in lighting technology; Microelectronics in drive technology; Microelectronics in railway technology. The following shortened versions of these lectures are intended to motivate people to visit this event and to prepare contributions to and questions for the discussions.

  7. Hybrid planar lightwave circuits for defense and aerospace applications

    Science.gov (United States)

    Zhang, Hua; Bidnyk, Serge; Yang, Shiquan; Balakrishnan, Ashok; Pearson, Matt; O'Keefe, Sean

    2010-04-01

    We present innovations in Planar Lightwave Circuits (PLCs) that make them ideally suited for use in advanced defense and aerospace applications. We discuss PLCs that contain no micro-optic components, no moving parts, pose no spark or fire hazard, are extremely small and lightweight, and are capable of transporting and processing a range of optical signals with exceptionally high performance. This PLC platform is designed for on-chip integration of active components such as lasers and detectors, along with transimpedance amplifiers and other electronics. These active components are hybridly integrated with our silica-on-silicon PLCs using fully-automated robotics and image recognition technology. This PLC approach has been successfully applied to the design and fabrication of multi-channel transceivers for aerospace applications. The chips contain hybrid DFB lasers and high-efficiency detectors, each capable of running over 10 Gb/s, with mixed digital and analog traffic multiplexed to a single optical fiber. This highlyintegrated functionality is combined onto a silicon chip smaller than 4 x 10 mm, weighing failures after extreme temperature cycling through a range of > 125 degC, and more than 2,000 hours operating at 95 degC ambient air temperature. We believe that these recent advancements in planar lightwave circuits are poised to revolutionize optical communications and interconnects in the aerospace and defense industries.

  8. Microelectronics Reliability

    Science.gov (United States)

    2017-01-17

    inverters  connected in a chain. ................................................. 5  Figure 3  Typical graph showing frequency versus square root of...developing an experimental  reliability estimating methodology that could both illuminate the  lifetime  reliability of advanced devices,  circuits and...or  FIT of the device. In other words an accurate estimate of the device  lifetime  was found and thus the  reliability  that  can  be  conveniently

  9. Design and implementation of a hybrid circuit system for micro sensor signal processing

    International Nuclear Information System (INIS)

    Wang Zhuping; Chen Jing; Liu Ruqing

    2011-01-01

    This paper covers a micro sensor analog signal processing circuit system (MASPS) chip with low power and a digital signal processing circuit board implementation including hardware connection and software design. Attention has been paid to incorporate the MASPS chip into the digital circuit board. The ultimate aim is to form a hybrid circuit used for mixed-signal processing, which can be applied to a micro sensor flow monitoring system. (semiconductor integrated circuits)

  10. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  11. The ATPG Attack for Reverse Engineering of Combinational Hybrid Custom-Programmable Circuits

    Science.gov (United States)

    2017-03-23

    Introduction The widely practiced horizontal integrated circuit supply chain exposes a design to various types of attacks including the reverse engineering ...STT_CMOS designs for reverse- engineering prevention, DAC 2016. [5] M. E. Massad and et. al. Integrated circuit (IC) decamouflaging: reverse...The ATPG Attack for Reverse Engineering of Combinational Hybrid Custom-Programmable Circuits Raza Shafiq Hamid Mahmoodi Houman Homayoun Hassan

  12. Organic-inorganic hybrid material SUNCONNECT® for photonic integrated circuit

    Science.gov (United States)

    Nawata, Hideyuki; Oshima, Juro; Kashino, Tsubasa

    2018-02-01

    In this paper, we report the feature and properties about organic-inorganic hybrid material, "SUNCONNECT®" for photonic integrated circuit. "SUNCONNECT®" materials have low propagation loss at 1310nm (0.29dB/cm) and 1550nm (0.45dB/cm) respectively. In addition, the material has high thermal resistance both high temperature annealing test at 300°C and also 260°C solder heat resistance test. For actual device application, high reliability is required. 85°C /85% test was examined by using multi-mode waveguide. As a result, it indicated that variation of insertion loss property was not changed significantly after high temperature / high humidity test. For the application to photonic integrated circuit, it was demonstrated to fabricate polymer optical waveguide by using three different methods. Single-micron core pattern can be fabricated on cladding layer by using UV lithography with proximity gap exposure. Also, single-mode waveguide can be also fabricated with over cladding. On the other hands, "Mosquito method" and imprint method can be applied to fabricate polymer optical waveguide. Remarkably, these two methods can fabricate gradedindex type optical waveguide without using photo mask. In order to evaluate the optical performance, NFP's observation, measurement of insertion loss and propagation loss by cut-back methods were carried out by using each waveguide sample.

  13. Hybrid circuit prototypes for the CMS Tracker upgrade front-end electronics

    International Nuclear Information System (INIS)

    Blanchot, G; Honma, A; Kovacs, M; Braga, D; Raymond, M

    2013-01-01

    New high-density interconnect hybrid circuits are under development for the CMS tracker modules at the HL-LHC. These hybrids will provide module connectivity between flip-chip front-end ASICs, strip sensors and a service board for the data transmission and powering. Rigid organic-based substrate prototypes and also a flexible hybrid design have been built, containing up to eight front-end flip chip ASICs. A description of the function of the hybrid circuit in the tracker, the first prototype designs, results of some electrical and mechanical properties from the prototypes, and examples of the integration of the hybrids into detector modules are presented

  14. Graphene-on-silicon hybrid plasmonic-photonic integrated circuits.

    Science.gov (United States)

    Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke

    2017-06-16

    Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.

  15. Radiation effects on microelectronics in space

    International Nuclear Information System (INIS)

    Srour, J.R.; McGarrity, J.M.

    1988-01-01

    The basic mechanisms of space radiation effects on microelectronics are reviewed in this paper. Topics discussed include the effects of displacement damage and ionizing radiation on devices and circuits, single event phenomena, dose enhancement, radiation effects on optoelectronic devices and passive components, hardening approaches, and simulation of the space radiation environment. A summary is presented of damage mechanisms that can cause temporary or permanent failure of devices and circuits operating in space

  16. Microelectronic systems 1 checkbook

    CERN Document Server

    Vears, R E

    2013-01-01

    Microelectronic Systems 1 Checkbook provides coverage of the Business and Technician Education Council level 1 unit in Microelectronic Systems. However, it can be regarded as a basic textbook in microelectronic systems for a much wider range of studies. Each topic considered in the text is presented in a way that assumes the reader has little prior knowledge of electronics. The aim of the book is to provide an introduction to the concept of systems, to differentiate analogue and digital systems, and to describe the nature of microprocessor-controlled systems. An introduction to programming is

  17. Physics in microelectronics and microelectronics in physics

    International Nuclear Information System (INIS)

    Mooser, E.

    1983-01-01

    Modern semiconductor technology and its many different facets such as microelectronics, optoelectronics, integrated optics, solar energy conversion, etc... have their origin in solid state physics, However, because of their enormous economic impact, their development has been so rapid and has lead to such a high degree of complexity and sophistication, that to the newcomer in the field, the links between solid state electronics and solid state physics are no longer evident. (author) [pt

  18. First applications of high temperature superconductors in microelectronic. Subproject: Foundations of a reality-near simulation of superconducting high frequency circuits. Final report

    International Nuclear Information System (INIS)

    Wolff, I.; Konopka, J.; Fritsch, U.; Hofschen, S.; Rittweger, M.; Becks, T.; Schroeder, W.; Ma Jianguo.

    1994-01-01

    The basis of computer aided design of the physical properties of high temperature superconductors in high frequency and microwave areas were not well known and understood at the beginning of this research project. For this reason within in the research project as well new modells for describing the microwave properties of these superconductors have been developed as alos well known numerical analysis techniques as e.g. the boundary integral method, the method of finite differences in time domain and the spectral domain analysis technique have been changed so that they meet the requirements of superconducting high frequency and microwave circuits. Hereby it especially also was considered that the substrate materials used for high temperature superconductors normally have high dielectric constants and big anisotropies so that new analysis techniques had to be developed to consider the influence of these parameters on the components and circuits. The dielectric properties of the substrate materials furthermore have been a subject of measurement activities in which the permittivity tensor of the materials have been determined with high accuracy and ogver a large frequency range. As a result of the performed investigations now improved numerical simulation techniques on a realistic basis are available for the analysis of superconducting high frequency and microwave circuits. (orig.) [de

  19. Microelectronics from fundamentals to applied design

    CERN Document Server

    Di Paolo Emilio, Maurizio

    2016-01-01

    This book serves as a practical guide for practicing engineers who need to design analog circuits for microelectronics.  Readers will develop a comprehensive understanding of the basic techniques of analog modern electronic circuit design, discrete and integrated, application as sensors and control and data acquisition systems,and techniques of PCB design.  ·         Describes fundamentals of microelectronics design in an accessible manner; ·         Takes a problem-solving approach to the topic, offering a hands-on guide for practicing engineers; ·         Provides realistic examples to inspire a thorough understanding of system-level issues, before going into the detail of components and devices; ·         Uses a new approach and provides several skills that help engineers and designers retain key and advanced concepts.

  20. Ion implantation for microelectronics

    International Nuclear Information System (INIS)

    Dearnaley, G.

    1977-01-01

    Ion implantation has proved to be a versatile and efficient means of producing microelectronic devices. This review summarizes the relevant physics and technology and assesses the advantages of the method. Examples are then given of widely different device structures which have been made by ion implantation. While most of the industrial application has been in silicon, good progress continues to be made in the more difficult field of compound semiconductors. Equipment designed for the industrial ion implantation of microelectronic devices is discussed briefly. (Auth.)

  1. Microelectronic systems 3 checkbook

    CERN Document Server

    Vears, R E

    1985-01-01

    Microelectronic Systems 3: Checkbook aims to extend the range of hardware, software, and interfacing techniques developed at level 2. This book concentrates on the highly popular 6502, Z80, and 6800 microprocessors and contains approximately 70 tested programs that may be used with little or no modification on most systems based on these microprocessors. This text also covers the main points concerned with computer hardware configuration, interfacing devices, subroutines and the stack, polling and interrupts, microelectronic stores, and address decoding and organization. Each chapter of the b

  2. Delay-area trade-off for MPRM circuits based on hybrid discrete particle swarm optimization

    International Nuclear Information System (INIS)

    Jiang Zhidi; Wang Zhenhai; Wang Pengjun

    2013-01-01

    Polarity optimization for mixed polarity Reed—Muller (MPRM) circuits is a combinatorial issue. Based on the study on discrete particle swarm optimization (DPSO) and mixed polarity, the corresponding relation between particle and mixed polarity is established, and the delay-area trade-off of large-scale MPRM circuits is proposed. Firstly, mutation operation and elitist strategy in genetic algorithm are incorporated into DPSO to further develop a hybrid DPSO (HDPSO). Then the best polarity for delay and area trade-off is searched for large-scale MPRM circuits by combining the HDPSO and a delay estimation model. Finally, the proposed algorithm is testified by MCNC Benchmarks. Experimental results show that HDPSO achieves a better convergence than DPSO in terms of search capability for large-scale MPRM circuits. (semiconductor integrated circuits)

  3. Manufacturing experience and test results of the PS prototype flexible hybrid circuit for the CMS Tracker Upgrade

    CERN Document Server

    Kovacs, Mark Istvan; Gadek, Tomasz; Honma, Alan; Vasey, Francois

    2017-01-01

    The CMS Tracker Phase-2 Upgrade for HL-LHC requires High Density Interconnect (HDI) flexible hybrid circuits to build modules with low mass and high granularity. The hybrids are carbon fibre reinforced flexible circuits with flip-chips and passives. Three different manufacturers produced prototype hybrids for the Pixel-Strip type modules. The first part of the presentation will focus on the design challenges of this state of the art circuit. Afterwards, the difficulties and experience related to the circuit manufacturing and assembly are presented. The description of quality inspection methods with comprehensive test results will lead to the conclusion.

  4. Microelectronic test structures for CMOS technology

    CERN Document Server

    Ketchen, Mark B

    2011-01-01

    Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

  5. The Hybrid Integrated Circuit of the ALICE Inner Tracking System upgrade

    CERN Document Server

    Fiorenza, G; Pastore, C; Valentino, V

    2016-01-01

    The upgrade of the Inner Tracking System scheduled during the second long shutdown is an important milestone of the ALICE upgrade and it will provide a high improvement of its performances. In this contribution the smallest operator unit of the detector, the Hybrid Integrated Circuits, is presented.

  6. A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit.

    Science.gov (United States)

    Chakrabarti, B; Lastras-Montaño, M A; Adam, G; Prezioso, M; Hoskins, B; Payvand, M; Madhavan, A; Ghofrani, A; Theogarajan, L; Cheng, K-T; Strukov, D B

    2017-02-14

    Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore's law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + "Molecular") architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.

  7. Hybrid quantum circuit with a superconducting qubit coupled to an electron spin ensemble

    Energy Technology Data Exchange (ETDEWEB)

    Kubo, Yuimaru; Grezes, Cecile; Vion, Denis; Esteve, Daniel; Bertet, Patrice [Quantronics Group, SPEC (CNRS URA 2464), CEA-Saclay, 91191 Gif-sur-Yvette (France); Diniz, Igor; Auffeves, Alexia [Institut Neel, CNRS, BP 166, 38042 Grenoble (France); Isoya, Jun-ichi [Research Center for Knowledge Communities, University of Tsukuba, 305-8550 Tsukuba (Japan); Jacques, Vincent; Dreau, Anais; Roch, Jean-Francois [LPQM (CNRS, UMR 8537), Ecole Normale Superieure de Cachan, 94235 Cachan (France)

    2013-07-01

    We report the experimental realization of a hybrid quantum circuit combining a superconducting qubit and an ensemble of electronic spins. The qubit, of the transmon type, is coherently coupled to the spin ensemble consisting of nitrogen-vacancy (NV) centers in a diamond crystal via a frequency-tunable superconducting resonator acting as a quantum bus. Using this circuit, we prepare arbitrary superpositions of the qubit states that we store into collective excitations of the spin ensemble and retrieve back into the qubit. We also report a new method for detecting the magnetic resonance of electronic spins at low temperature with a qubit using the hybrid quantum circuit, as well as our recent progress on spin echo experiments.

  8. Recent trends in hardware security exploiting hybrid CMOS-resistive memory circuits

    Science.gov (United States)

    Sahay, Shubham; Suri, Manan

    2017-12-01

    This paper provides a comprehensive review and insight of recent trends in the field of random number generator (RNG) and physically unclonable function (PUF) circuits implemented using different types of emerging resistive non-volatile (NVM) memory devices. We present a detailed review of hybrid RNG/PUF implementations based on the use of (i) Spin-Transfer Torque (STT-MRAM), and (ii) metal-oxide based (OxRAM), NVM devices. Various approaches on Hybrid CMOS-NVM RNG/PUF circuits are considered, followed by a discussion on different nanoscale device phenomena. Certain nanoscale device phenomena (variability/stochasticity etc), which are otherwise undesirable for reliable memory and storage applications, form the basis for low power and highly scalable RNG/PUF circuits. Detailed qualitative comparison and benchmarking of all implementations is performed.

  9. Moore's law and the impact on trusted and radiation-hardened microelectronics.

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Kwok Kee

    2011-12-01

    In 1965 Gordon Moore wrote an article claiming that integrated circuit density would scale exponentially. His prediction has remained valid for more than four decades. Integrated circuits have changed all aspects of everyday life. They are also the 'heart and soul' of modern systems for defense, national infrastructure, and intelligence applications. The United States government needs an assured and trusted microelectronics supply for military systems. However, migration of microelectronics design and manufacturing from the United States to other countries in recent years has placed the supply of trusted microelectronics in jeopardy. Prevailing wisdom dictates that it is necessary to use microelectronics fabricated in a state-of-the-art technology for highest performance and military system superiority. Close examination of silicon microelectronics technology evolution and Moore's Law reveals that this prevailing wisdom is not necessarily true. This presents the US government the possibility of a totally new approach to acquire trusted microelectronics.

  10. Free-world microelectronic manufacturing equipment

    Science.gov (United States)

    Kilby, J. S.; Arnold, W. H.; Booth, W. T.; Cunningham, J. A.; Hutcheson, J. D.; Owen, R. W.; Runyan, W. R.; McKenney, Barbara L.; McGrain, Moira; Taub, Renee G.

    1988-12-01

    Equipment is examined and evaluated for the manufacture of microelectronic integrated circuit devices and sources for that equipment within the Free World. Equipment suitable for the following are examined: single-crystal silicon slice manufacturing and processing; required lithographic processes; wafer processing; device packaging; and test of digital integrated circuits. Availability of the equipment is also discussed, now and in the near future. Very adequate equipment for most stages of the integrated circuit manufacturing process is available from several sources, in different countries, although the best and most widely used versions of most manufacturing equipment are made in the United States or Japan. There is also an active market in used equipment, suitable for manufacture of capable integrated circuits with performance somewhat short of the present state of the art.

  11. Wire bonding in microelectronics

    CERN Document Server

    Harman, George G

    2010-01-01

    Wire Bonding in Microelectronics, Third Edition, has been thoroughly revised to help you meet the challenges of today's small-scale and fine-pitch microelectronics. This authoritative guide covers every aspect of designing, manufacturing, and evaluating wire bonds engineered with cutting-edge techniques. In addition to gaining a full grasp of bonding technology, you'll learn how to create reliable bonds at exceedingly high yields, test wire bonds, solve common bonding problems, implement molecular cleaning methods, and much more. Coverage includes: Ultrasonic bonding systems and technologies, including high-frequency systems Bonding wire metallurgy and characteristics, including copper wire Wire bond testing Gold-aluminum intermetallic compounds and other interface reactions Gold and nickel-based bond pad plating materials and problems Cleaning to improve bondability and reliability Mechanical problems in wire bonding High-yield, fine-pitch, specialized-looping, soft-substrate, and extreme-temperature wire bo...

  12. Equivalent Circuit Analysis of Photovoltaic-Thermoelectric Hybrid Device with Different TE Module Structure

    Directory of Open Access Journals (Sweden)

    Haijun Chen

    2014-01-01

    Full Text Available Combining two different types of solar cells with different absorption bands into a hybrid cell is a very useful method to improve the utilization efficiency of solar energy. The experimental data of dye-sensitized solar cells (DSSCs and thermoelectric generators (TEG was simulated by equivalent circuit method, and some parameters of DSSCs were obtained. Then, the equivalent circuit model with the obtained parameters was used to optimize the structure design of photovoltaic- (PV- thermoelectric (TE hybrid devices. The output power (Pout first increases to a maximum and then decreases by increasing the TE prism size, and a smaller spacing between p-type prism and n-type prism of a TE p-n junction causes a higher output power of TEG and hybrid device. When the spacing between TE prisms is 15 μm and the optimal base side length of TE prism is 40 μm, the maximum theoretical efficiency reaches 24.6% according to the equivalent circuit analysis. This work would give some enlightenment for the development of high-performance PV-TE hybrid devices.

  13. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

    Energy Technology Data Exchange (ETDEWEB)

    Li Shu; Zhang Tong [Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)], E-mail: lis4@rpi.edu, E-mail: tzhang@ecse.rpi.edu

    2008-05-07

    Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

  14. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect.

    Science.gov (United States)

    Li, Shu; Zhang, Tong

    2008-05-07

    Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

  15. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

    International Nuclear Information System (INIS)

    Li Shu; Zhang Tong

    2008-01-01

    Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance

  16. Microelectronic systems N2 checkbook

    CERN Document Server

    Vears, R E

    2013-01-01

    Microelectronic Systems N2 Checkbook provides coverage of the Business and Technician Education Council level NII unit in Microelectronic Systems. However, it can be regarded as a textbook in microelectronic systems for a much wider range of studies. The aim of this book is to provide a foundation in microelectronic systems hardware and software techniques. Each topic considered in the text is presented in a way that assumes in the reader only the knowledge attained in BTEC Information Technology Studies F, Engineering Fundamentals F, or equivalent. This book concentrates on the highly popular

  17. Microelectronic circuit design for energy harvesting systems

    National Research Council Canada - National Science Library

    Emilio, Maurizio Di Paolo

    2017-01-01

    .... Coverage includes advanced methods in low and high power electronics, as well as principles of micro-scale design based on piezoelectric, electromagnetic and thermoelectric technologies with control...

  18. Adhesion in microelectronics

    CERN Document Server

    Mittal, K L

    2014-01-01

    This comprehensive book will provide both fundamental and applied aspects of adhesion pertaining to microelectronics in a single and easily accessible source. Among the topics to be covered include; Various theories or mechanisms of adhesionSurface (physical or chemical) characterization of materials as it pertains to adhesionSurface cleaning as it pertains to adhesionWays to improve adhesionUnraveling of interfacial interactions using an array of pertinent techniquesCharacterization of interfaces / interphasesPolymer-polymer adhesionMetal-polymer adhesion  (metallized polymers)Polymer adhesi

  19. A hybrid analytical model for open-circuit field calculation of multilayer interior permanent magnet machines

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhen [School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072 (China); Xia, Changliang [School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072 (China); Tianjin Engineering Center of Electric Machine System Design and Control, Tianjin 300387 (China); Yan, Yan, E-mail: yanyan@tju.edu.cn [School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072 (China); Geng, Qiang [Tianjin Engineering Center of Electric Machine System Design and Control, Tianjin 300387 (China); Shi, Tingna [School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072 (China)

    2017-08-01

    Highlights: • A hybrid analytical model is developed for field calculation of multilayer IPM machines. • The rotor magnetic field is calculated by the magnetic equivalent circuit method. • The field in the stator and air-gap is calculated by subdomain technique. • The magnetic scalar potential on rotor surface is modeled as trapezoidal distribution. - Abstract: Due to the complicated rotor structure and nonlinear saturation of rotor bridges, it is difficult to build a fast and accurate analytical field calculation model for multilayer interior permanent magnet (IPM) machines. In this paper, a hybrid analytical model suitable for the open-circuit field calculation of multilayer IPM machines is proposed by coupling the magnetic equivalent circuit (MEC) method and the subdomain technique. In the proposed analytical model, the rotor magnetic field is calculated by the MEC method based on the Kirchhoff’s law, while the field in the stator slot, slot opening and air-gap is calculated by subdomain technique based on the Maxwell’s equation. To solve the whole field distribution of the multilayer IPM machines, the coupled boundary conditions on the rotor surface are deduced for the coupling of the rotor MEC and the analytical field distribution of the stator slot, slot opening and air-gap. The hybrid analytical model can be used to calculate the open-circuit air-gap field distribution, back electromotive force (EMF) and cogging torque of multilayer IPM machines. Compared with finite element analysis (FEA), it has the advantages of faster modeling, less computation source occupying and shorter time consuming, and meanwhile achieves the approximate accuracy. The analytical model is helpful and applicable for the open-circuit field calculation of multilayer IPM machines with any size and pole/slot number combination.

  20. A hybrid analytical model for open-circuit field calculation of multilayer interior permanent magnet machines

    Science.gov (United States)

    Zhang, Zhen; Xia, Changliang; Yan, Yan; Geng, Qiang; Shi, Tingna

    2017-08-01

    Due to the complicated rotor structure and nonlinear saturation of rotor bridges, it is difficult to build a fast and accurate analytical field calculation model for multilayer interior permanent magnet (IPM) machines. In this paper, a hybrid analytical model suitable for the open-circuit field calculation of multilayer IPM machines is proposed by coupling the magnetic equivalent circuit (MEC) method and the subdomain technique. In the proposed analytical model, the rotor magnetic field is calculated by the MEC method based on the Kirchhoff's law, while the field in the stator slot, slot opening and air-gap is calculated by subdomain technique based on the Maxwell's equation. To solve the whole field distribution of the multilayer IPM machines, the coupled boundary conditions on the rotor surface are deduced for the coupling of the rotor MEC and the analytical field distribution of the stator slot, slot opening and air-gap. The hybrid analytical model can be used to calculate the open-circuit air-gap field distribution, back electromotive force (EMF) and cogging torque of multilayer IPM machines. Compared with finite element analysis (FEA), it has the advantages of faster modeling, less computation source occupying and shorter time consuming, and meanwhile achieves the approximate accuracy. The analytical model is helpful and applicable for the open-circuit field calculation of multilayer IPM machines with any size and pole/slot number combination.

  1. Understanding microelectronics a top-down approach

    CERN Document Server

    Maloberti, Franco

    2011-01-01

    The microelectronics evolution has given rise to many modern benefits but has also changed design methods and attitudes to learning. Technology advancements shifted focus from simple circuits to complex systems with major attention to high-level descriptions. The design methods moved from a bottom-up to a top-down approach. For today's students, the most beneficial approach to learning is this top-down method that demonstrates a global view of electronics before going into specifics. Franco Maloberti uses this approach to explain the fundamentals of electronics, such as processing functions,

  2. Microelectronics materials characterization studies at the Cornell TRIGA Reactor

    International Nuclear Information System (INIS)

    McGuire, Stephen C.

    1992-01-01

    The Cornell program of microelectronics materials characterization by neutron activation analysis (NAA) is described. Experimental details and results from the successful application of NAA to silicon germanium circuit structures and nickel silicide layers are presented. In doing so, the potential for using X rays from isotopes that decay by electron capture is demonstrated. (author)

  3. The Electrical Engineering Curriculum at the Technical University of Denmark - Options in Microelectronics

    DEFF Research Database (Denmark)

    Bruun, Erik; Nielsen, Lars Drud

    1997-01-01

    This paper describes the modular structure of the engineering curriculum at the Technical University of Denmark. The basic requirements for an electrical engineering curriculum are presented and different possibilities for specialization in microelectronics and integrated circuit design...

  4. Multi-valued logic circuits using hybrid circuit consisting of three gates single-electron transistors (TG-SETs) and MOSFETs.

    Science.gov (United States)

    Shin, SeungJun; Yu, YunSeop; Choi, JungBum

    2008-10-01

    New multi-valued logic (MVL) families using the hybrid circuits consisting of three gates single-electron transistors (TG-SETs) and a metal-oxide-semiconductor field-effect transistor (MOSFET) are proposed. The use of SETs offers periodic literal characteristics due to Coulomb oscillation of SET, which allows a realization of binary logic (BL) circuits as well as multi-valued logic (MVL) circuits. The basic operations of the proposed MVL families are successfully confirmed through SPICE circuit simulation based on the physical device model of a TG-SET. The proposed MVL circuits are found to be much faster, but much larger power consumption than a previously reported MVL, and they have a trade-off between speed and power consumption. As an example to apply the newly developed MVL families, a half-adder is introduced.

  5. All-fiber hybrid photon-plasmon circuits: integrating nanowire plasmonics with fiber optics.

    Science.gov (United States)

    Li, Xiyuan; Li, Wei; Guo, Xin; Lou, Jingyi; Tong, Limin

    2013-07-01

    We demonstrate all-fiber hybrid photon-plasmon circuits by integrating Ag nanowires with optical fibers. Relying on near-field coupling, we realize a photon-to-plasmon conversion efficiency up to 92% in a fiber-based nanowire plasmonic probe. Around optical communication band, we assemble an all-fiber resonator and a Mach-Zehnder interferometer (MZI) with Q-factor of 6 × 10(6) and extinction ratio up to 30 dB, respectively. Using the MZI, we demonstrate fiber-compatible plasmonic sensing with high sensitivity and low optical power.

  6. A novel circuit topology of modified switched boost hybrid resonant inverter fitted induction heating equipment

    Directory of Open Access Journals (Sweden)

    Bhattacharya Ananyo

    2016-12-01

    Full Text Available A novel circuit topology of modified switched boost high frequency hybrid resonant inverter fitted induction heating equipment is presented in this paper for efficient induction heating. Recently, induction heating technique is becoming very popular for both domestic and industrial purposes because of its high energy efficiency and controllability. Generally in induction heating, a high frequency alternating magnetic field is required to induce the eddy currents in the work piece. High frequency resonant inverters are incorporated in induction heating equipment which produce a high frequency alternating magnetic field surrounding the coil. Previously this high frequency alternating magnetic field was produced by voltage source inverters. But VSIs have several demerits. So, in this paper, a new scheme of modified switched boost high frequency hybrid resonant inverter fitted induction heating equipment has been depicted which enhances the energy efficiency and controllability and the same is validated by PSIM.

  7. A Hybrid Circuit for Spoof Surface Plasmons and Spatial Waveguide Modes to Reach Controllable Band-Pass Filters.

    Science.gov (United States)

    Zhang, Qian; Zhang, Hao Chi; Wu, Han; Cui, Tie Jun

    2015-11-10

    We propose a hybrid circuit for spoof surface plasmon polaritons (SPPs) and spatial waveguide modes to develop new microwave devices. The hybrid circuit includes a spoof SPP waveguide made of two anti-symmetric corrugated metallic strips and a traditional substrate integrated waveguide (SIW). From dispersion relations, we show that the electromagnetic waves only can propagate through the hybrid circuit when the operating frequency is less than the cut-off frequency of the SPP waveguide and greater than the cut-off frequency of SIW, generating efficient band-pass filters. We demonstrate that the pass band is controllable in a large range by designing the geometrical parameters of SPP waveguide and SIW. Full-wave simulations are provided to show the large adjustability of filters, including ultra wideband and narrowband filters. We fabricate a sample of the new hybrid device in the microwave frequencies, and measurement results have excellent agreements to numerical simulations, demonstrating excellent filtering characteristics such as low loss, high efficiency, and good square ratio. The proposed hybrid circuit gives important potential to accelerate the development of plasmonic integrated functional devices and circuits in both microwave and terahertz frequencies.

  8. Quality control considerations for the development of the front end hybrid circuits for the CMS Outer Tracker upgrade

    CERN Document Server

    Gadek, Tomasz; Bonnaud, Julien Yves Robert; De Clercq, Jarne Theo; Honma, Alan; Koliatos, Alexandros; Kovacs, Mark Istvan; Luetic, Jelena

    2017-01-01

    The upgrade of the CMS Outer Tracker for the HL-LHC requires the design of new double-sensor modules. They contain two high-density front end hybrid circuits, equipped with flip-chip ASICs, passives and mechanical structures. First prototype hybrids in a close-to-final form have been ordered from three manufacturers. To qualify these hybrids a test setup was built, which emulates future tracker temperature and humidity conditions, provides temporary interconnection, and implements testing features. The system was automated to minimize the testing time in view of the production phase. Failure modes, deliberately implemented in the produced hybrids, provided feedback on the system’s effectiveness.

  9. Single axis controlled hybrid magnetic bearing for left ventricular assist device: hybrid core and closed magnetic circuit.

    Science.gov (United States)

    da Silva, Isaias; Horikawa, Oswaldo; Cardoso, Jose R; Camargo, Fernando A; Andrade, Aron J P; Bock, Eduardo G P

    2011-05-01

    In previous studies, we presented main strategies for suspending the rotor of a mixed-flow type (centrifugal and axial) ventricular assist device (VAD), originally presented by the Institute Dante Pazzanese of Cardiology (IDPC), Brazil. Magnetic suspension is achieved by the use of a magnetic bearing architecture in which the active control is executed in only one degree of freedom, in the axial direction of the rotor. Remaining degrees of freedom, excepting the rotation, are restricted only by the attraction force between pairs of permanent magnets. This study is part of a joint project in development by IDPC and Escola Politecnica of São Paulo University, Brazil. This article shows advances in that project, presenting two promising solutions for magnetic bearings. One solution uses hybrid cores as electromagnetic actuators, that is, cores that combine iron and permanent magnets. The other solution uses actuators, also of hybrid type, but with the magnetic circuit closed by an iron core. After preliminary analysis, a pump prototype has been developed for each solution and has been tested. For each prototype, a brushless DC motor has been developed as the rotor driver. Each solution was evaluated by in vitro experiments and guidelines are extracted for future improvements. Tests have shown good results and demonstrated that one solution is not isolated from the other. One complements the other for the development of a single-axis-controlled, hybrid-type magnetic bearing for a mixed-flow type VAD. © 2011, Copyright the Authors. Artificial Organs © 2011, International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

  10. A microfluidic microprocessor: controlling biomimetic containers and cells using hybrid integrated circuit/microfluidic chips.

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A; Westervelt, Robert M

    2010-11-07

    We present an integrated platform for performing biological and chemical experiments on a chip based on standard CMOS technology. We have developed a hybrid integrated circuit (IC)/microfluidic chip that can simultaneously control thousands of living cells and pL volumes of fluid, enabling a wide variety of chemical and biological tasks. Taking inspiration from cellular biology, phospholipid bilayer vesicles are used as robust picolitre containers for reagents on the chip. The hybrid chip can be programmed to trap, move, and porate individual living cells and vesicles and fuse and deform vesicles using electric fields. The IC spatially patterns electric fields in a microfluidic chamber using 128 × 256 (32,768) 11 × 11 μm(2) metal pixels, each of which can be individually driven with a radio frequency (RF) voltage. The chip's basic functions can be combined in series to perform complex biological and chemical tasks and can be performed in parallel on the chip's many pixels for high-throughput operations. The hybrid chip operates in two distinct modes, defined by the frequency of the RF voltage applied to the pixels: Voltages at MHz frequencies are used to trap, move, and deform objects using dielectrophoresis and voltages at frequencies below 1 kHz are used for electroporation and electrofusion. This work represents an important step towards miniaturizing the complex chemical and biological experiments used for diagnostics and research onto automated and inexpensive chips.

  11. Fundamentals of microelectronics

    CERN Document Server

    Razavi, Behzad

    2008-01-01

    Designed to build a strong foundation in both design and analysis of electronic circuits, Razavi teaches conceptual understanding and mastery of the material by using modern examples to motivate and prepare students for advanced courses and their careers. Razavi's unique problem-solving framework enables students to deconstruct complex problems into components that they are familiar with which builds the confidence and intuitive skills needed for success.

  12. Lessons learned from early microelectronics production at Sandia National Laboratories

    Energy Technology Data Exchange (ETDEWEB)

    Weaver, H.T.

    1998-02-01

    During the 1980s Sandia designed, developed, fabricated, tested, and delivered hundreds of thousands of radiation hardened Integrated Circuits (IC) for use in weapons and satellites. Initially, Sandia carried out all phases, design through delivery, so that development of next generation ICs and production of current generation circuits were carried out simultaneously. All this changed in the mid-eighties when an outside contractor was brought in to produce ICs that Sandia developed, in effect creating a crisp separation between development and production. This partnership had a severe impact on operations, but its more damaging effect was the degradation of Sandia`s microelectronics capabilities. This report outlines microelectronics development and production in the early eighties and summarizes the impact of changing to a separate contractor for production. This record suggests that low volume production be best accomplished within the development organization.

  13. Non-equilibrium correlations and entanglement in a semiconductor hybrid circuit-QED system

    International Nuclear Information System (INIS)

    Contreras-Pulido, L D; Emary, C; Brandes, T; Aguado, Ramón

    2013-01-01

    We present a theoretical study of a hybrid circuit-quantum electrodynamics system composed of two semiconducting charge-qubits confined in a microwave resonator. The qubits are defined in terms of the charge states of two spatially separated double quantum dots (DQDs) which are coupled to the same photon mode in the microwave resonator. We analyse a transport setup where each DQD is attached to electronic reservoirs and biased out-of-equilibrium by a large voltage, and study how electron transport across each DQD is modified by the coupling to the common resonator. In particular, we show that the inelastic current through each DQD reflects an indirect qubit–qubit interaction mediated by off-resonant photons in the microwave resonator. As a result of this interaction, both charge qubits stay entangled in the steady (dissipative) state. Finite shot noise cross-correlations between currents across distant DQDs are another manifestation of this nontrivial steady-state entanglement. (paper)

  14. A hybrid nanomemristor/transistor logic circuit capable of self-programming.

    Science.gov (United States)

    Borghetti, Julien; Li, Zhiyong; Straznicky, Joseph; Li, Xuema; Ohlberg, Douglas A A; Wu, Wei; Stewart, Duncan R; Williams, R Stanley

    2009-02-10

    Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metal-oxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information. As an illustrative demonstration, the compound Boolean logic operation (A AND B) OR (C AND D) was performed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET inverter/amplifier outputs. By routing the output signal of a logic operation back onto a target memristor inside the array, the crossbar was conditionally configured by setting the state of a nonvolatile switch. Such conditional programming illuminates the way for a variety of self-programmed logic arrays, and for electronic synaptic computing.

  15. Swirling flow and its influence on dc arcs in a duo-flow hybrid circuit breaker

    International Nuclear Information System (INIS)

    Kweon, K Y; Lee, H S; Yan, J D; Fang, M T C; Park, K Y

    2009-01-01

    The effects of swirling flow on the behaviour of dc SF 6 arcs in a duo-flow nozzle are computationally investigated in the electric current range 3-7 kA. A swirling flow is produced by the interaction of the magnetic field of a current-carrying coil and the plasma. Results show that a strong swirling flow is generated in regions where a large radial current density exists as a result of the conducting arc column rapidly changing its radial dimension. The presence of the swirling flow reduces the axis pressure, modifies the arc shape and slightly lowers the arc voltage (2-5%) in comparison with the case without considering the swirling flow. The different natures of swirling flows in a plasma jet/arc heater and in a hybrid circuit breaker are also discussed.

  16. Nanoelectronics: The perspective in microelectronics

    International Nuclear Information System (INIS)

    Mutihac, R.; Mutihac, R.C.; Cicuttin, A.; Colavita, A.A.

    2001-10-01

    The present survey briefly presents the-state-of-the-art in microelectronics, invokes physical considerations in estimating the intrinsic limits of present microelectronic devices, and highlights the future trends in the perspectives of the incoming nanoscale technologies. In order to design artificial systems with molecular precision, molecular brand new engineering methods must be developed, that is, to hold, position, and assemble nanoscale parts in compliance with the laws of physics. In the framework of the nanoscale technologies, the thermodynamically reversible single electron switching systems are considered as ultimate evolutionary end point of electronic logic devices built up at molecular level. (author)

  17. Improved method for detection of “hot spots” in microelectronic devices

    Directory of Open Access Journals (Sweden)

    Popov V. M.

    2008-06-01

    Full Text Available New method of liquid crystal thermography of “hot spots” in crystals of microelectronic products have been developed. The method is based on the use of local cholesteric phase image of “hot spot” in transparent smectic phase of cholesteric liquid crystal against a background of clearly visible topological elements on the surface of microelectronic device crystal. Examples of “hot spot” images in crystals of different types of integrated circuits are shown.

  18. Progress in nuclear measuring and experimental techniques by application of microelectronics. 1

    International Nuclear Information System (INIS)

    Meiling, W.

    1984-01-01

    In the past decade considerable progress has been made in nuclear measuring and experimental techniques by developing position-sensitive detector systems and widely using integrated circuits and microcomputers for data acquisition and processing as well as for automation of measuring processes. In this report which will be published in three parts those developments are reviewed and demonstrated on selected examples. After briefly characterizing microelectronics, the use of microelectronic elements for radiation detectors is reviewed. (author)

  19. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    International Nuclear Information System (INIS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-01-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

  20. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    Energy Technology Data Exchange (ETDEWEB)

    Jovanović, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

    2014-04-07

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  1. On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits.

    Science.gov (United States)

    Elshaari, Ali W; Zadeh, Iman Esmaeil; Fognini, Andreas; Reimer, Michael E; Dalacu, Dan; Poole, Philip J; Zwiller, Val; Jöns, Klaus D

    2017-08-30

    Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.

  2. A One-Dimensional Magnetic Chip with a Hybrid Magnetosensor and a Readout Circuit

    Directory of Open Access Journals (Sweden)

    Guo-Ming Sung

    2018-01-01

    Full Text Available This work presents a one-dimensional magnetic chip composed of a hybrid magnetosensor and a readout circuit, which were fabricated with 0.18 μm 1P6M CMOS technology. The proposed magnetosensor includes a polysilicon cross-shaped Hall plate and two separated metal-oxide semiconductor field-effect transistors (MOSFETs to sense the magnetic induction perpendicular to the chip surface. The readout circuit, which comprises a current-to-voltage converter, a low-pass filter, and an instrumentation amplifier, is designed to amplify the output Hall voltage with a gain of 43 dB. Furthermore, a SPICE macro model is proposed to predict the sensor’s performance in advance and to ensure sufficient comprehension of the magnetic mechanism of the proposed magnetosensor. Both simulated and measured results verify the correctness and flexibility of the proposed SPICE macro model. Measurements reveal that the maximum output Hall voltage VH, the optimum current-related magnetosensitivity SRI, the optimum voltage-related magnetosensitivity SRV, the averaged nonlinearity error NLE, and the relative bias current Ibias are 4.381 mV, 520.5 V/A·T, 40.04 V/V·T, 7.19%, and 200 μA, respectively, for the proposed 1-D magnetic chip with a readout circuit of 43 dB. The averaged NLE is small at high magnetic inductions of ±30 mT, whereas it is large at low magnetic inductions of ±30 G.

  3. Whole body perfusion for hybrid aortic arch repair: evolution of selective regional perfusion with a modified extracorporeal circuit.

    Science.gov (United States)

    Fernandes, Philip; Walsh, Graham; Walsh, Stephanie; O'Neil, Michael; Gelinas, Jill; Chu, Michael W A

    2017-04-01

    Patients undergoing hybrid aortic arch reconstruction require careful protection of vital organs. We believe that whole body perfusion with tailored dual circuitry may help to achieve optimal patient outcomes. Our circuit has evolved from a secondary circuit utilizing a cardioplegia delivery device for lower body perfusion to a dual-oxygenator circuit. This allows individually controlled regional perfusion with ease of switching from secondary to primary circuit for total body flow. The re-design allows for separate flow and temperature regulation with two oxygenators in parallel. All patients underwent a single-stage operation for simultaneous treatment of arch and descending aortic pathology via a sternotomy, using a hybrid frozen elephant trunk technique. We report six consecutive patients undergoing hybrid arch and frozen elephant trunk reconstruction using a dual-oxygenator circuit. Five patients underwent elective surgery and one was emergent. One patient had an acute dissection while three underwent concomitant procedures, including a Ross procedure and two valve-sparing root reconstructions. Three cases were redo sternotomies. The mean pump time was 358 ± 131 min, the aortic cross clamp time 243 ± 135 min, the cardioplegia volume of 33,208 ml ± 16,173, cerebral ischemia 0 min, lower body ischemia 76 ± 34 min and the average lower body perfusion time was 142 min. Two patients did not require any donor blood products. The median intensive care unit (ICU) and hospital lengths of stay (LOS) were two days and 10 days, respectively. The average peak serum lactate on CPB was 7.47 mmol/L and, at admission to the ICU, it was 3.37 mmol/L. Renal and respiratory failure developed in the salvage acute type A dissection patient. No other complications occurred in this series. Whole body perfusion as delivered through individually controlled dual-oxygenator circuitry allows maximum flexibility for hybrid aortic arch reconstruction. A modified circuit perfusion

  4. Application of Cu-polyimide flex circuit and Al-on-glass pitch adapter for the ATLAS SCT barrel hybrid

    CERN Document Server

    Unno, Y; Ikegami, Y; Iwata, Y; Kohriki, T; Kondo, T; Nakano, I; Ohsugi, T; Takashima, R; Tanaka, R; Terada, S; Ujiie, N

    2005-01-01

    We applied the surface build-up Cu-polyimide flex-circuit technology with laser vias to the ATLAS SCT barrel hybrid to be made in one piece from the connector to the electronics sections including cables. The hybrids, reinforced with carbon-carbon substrates, provide mechanical strength, thermal conductivity, low-radiation length, and stability in application-specific integrated circuit (ASIC) operation. By following the design rules, we experienced little trouble in breaking the traces. The pitch adapter between the sensor and the ASICs was made of aluminum traces on glass substrate. We identified that the generation of whiskers around the wire-bonding feet was correlated with the hardness of metallized aluminum. The appropriate hardness has been achieved by keeping the temperature of the glasses as low as room temperature during the metallization. The argon plasma cleaning procedure cleaned the contamination on the gold pads of the hybrids for successful wire bonding, although it was unsuccessful in the alu...

  5. Investigation of DC hybrid circuit breaker based on high-speed switch and arc generator

    Science.gov (United States)

    Wu, Yifei; Rong, Mingzhe; Wu, Yi; Yang, Fei; Li, Mei; Zhong, Jianying; Han, Guohui; Niu, Chunping; Hu, Yang

    2015-02-01

    A new design of DC hybrid circuit breaker based on high-speed switch (HSS) and arc generator (AG), which can drastically profit from low heat loss in normal state and fast current breaking under fault state, is presented and analyzed in this paper. AG is designed according to the magnetic pinch effect of liquid metal. By utilizing the arc voltage generated across AG, the fault current is rapidly commutated from HSS into parallel connected branch. As a consequence, the arcless open of HSS is achieved. The post-arc conducting resume time (Δ tc) of AG and the commutation original voltage (Uc), two key factors in the commutation process, are investigated experimentally. Particularly, influences of the liquid metal channel diameter (Φ) of AG, fault current rate of rise (di/dt) and Uc on Δ tc are focused on. Furthermore, a suitable Uc is determined during the current commutation process, aiming at the reliable arcless open of HSS and short breaking time. Finally, the fault current breaking test is carried out for the current peak value of 11.8 kA, and the validity of the design is confirmed by the experimental results.

  6. Investigation of DC hybrid circuit breaker based on high-speed switch and arc generator.

    Science.gov (United States)

    Wu, Yifei; Rong, Mingzhe; Wu, Yi; Yang, Fei; Li, Mei; Zhong, Jianying; Han, Guohui; Niu, Chunping; Hu, Yang

    2015-02-01

    A new design of DC hybrid circuit breaker based on high-speed switch (HSS) and arc generator (AG), which can drastically profit from low heat loss in normal state and fast current breaking under fault state, is presented and analyzed in this paper. AG is designed according to the magnetic pinch effect of liquid metal. By utilizing the arc voltage generated across AG, the fault current is rapidly commutated from HSS into parallel connected branch. As a consequence, the arcless open of HSS is achieved. The post-arc conducting resume time (Δ tc) of AG and the commutation original voltage (Uc), two key factors in the commutation process, are investigated experimentally. Particularly, influences of the liquid metal channel diameter (Φ) of AG, fault current rate of rise (di/dt) and Uc on Δ tc are focused on. Furthermore, a suitable Uc is determined during the current commutation process, aiming at the reliable arcless open of HSS and short breaking time. Finally, the fault current breaking test is carried out for the current peak value of 11.8 kA, and the validity of the design is confirmed by the experimental results.

  7. SEMICONDUCTOR INTEGRATED CIRCUITS: A high performance 90 nm CMOS SAR ADC with hybrid architecture

    Science.gov (United States)

    Xingyuan, Tong; Jianming, Chen; Zhangming, Zhu; Yintang, Yang

    2010-01-01

    A 10-bit 2.5 MS/s SAR A/D converter is presented. In the circuit design, an R-C hybrid architecture D/A converter, pseudo-differential comparison architecture and low power voltage level shifters are utilized. Design challenges and considerations are also discussed. In the layout design, each unit resistor is sided by dummies for good matching performance, and the capacitors are routed with a common-central symmetry method to reduce the nonlin-earity error. This proposed converter is implemented based on 90 nm CMOS logic process. With a 3.3 V analog supply and a 1.0 V digital supply, the differential and integral nonlinearity are measured to be less than 0.36 LSB and 0.69 LSB respectively. With an input frequency of 1.2 MHz at 2.5 MS/s sampling rate, the SFDR and ENOB are measured to be 72.86 dB and 9.43 bits respectively, and the power dissipation is measured to be 6.62 mW including the output drivers. This SAR A/D converter occupies an area of 238 × 214 μm2. The design results of this converter show that it is suitable for multi-supply embedded SoC applications.

  8. 18k Channels single photon counting readout circuit for hybrid pixel detector

    International Nuclear Information System (INIS)

    Maj, P.; Grybos, P.; Szczygiel, R.; Zoladz, M.; Sakumura, T.; Tsuji, Y.

    2013-01-01

    We have performed measurements of an integrated circuit named PXD18k designed for hybrid pixel semiconductor detectors used in X-ray imaging applications. The PXD18k integrated circuit, fabricated in CMOS 180 nm technology, has dimensions of 9.64 mm×20 mm and contains approximately 26 million transistors. The core of the IC is a matrix of 96×192 pixels with 100 μm×100 μm pixel size. Each pixel works in a single photon counting mode. A single pixel contains two charge sensitive amplifiers with Krummenacher feedback scheme, two shapers, two discriminators (with independent thresholds A and B) and two 16-bit ripple counters. The data are read out via eight low voltage differential signaling (LVDS) outputs with 100 Mbps rate. The power consumption is dominated by analog blocks and it is about 23 μW/pixel. The effective peaking time at the discriminator input is 30 ns and is mainly determined by the time constants of the charge sensitive amplifier (CSA). The gain is equal to 42.5 μV/e − and the equivalent noise charge is 168 e − rms (with bump-bonded silicon pixel detector). Thanks to the use of trim DACs in each pixel, the effective threshold spread at the discriminator input is only 1.79 mV. The dead time of the front end electronics for a standard setting is 172 ns (paralyzable model). In the standard readout mode (when the data collection time is separated from the time necessary to readout data from the chip) the PXD18k IC works with two energy thresholds per pixel. The PXD18k can also be operated in the continuous readout mode (with a zero dead time) where one can select the number of bits readout from each pixel to optimize the PXD18k frame rate. For example, for reading out 16 bits/pixel the frame rate is 2.7 kHz and for 4 bits/pixel it rises to 7.1 kHz.

  9. 18k Channels single photon counting readout circuit for hybrid pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Maj, P., E-mail: piotr.maj@agh.edu.pl [AGH University of Science and Technology, Department of Measurements and Electronics, Al. Mickiewicza 30, 30-059 Krakow (Poland); Grybos, P.; Szczygiel, R.; Zoladz, M. [AGH University of Science and Technology, Department of Measurements and Electronics, Al. Mickiewicza 30, 30-059 Krakow (Poland); Sakumura, T.; Tsuji, Y. [X-ray Analysis Division, Rigaku Corporation, Matsubara, Akishima, Tokyo 196-8666 (Japan)

    2013-01-01

    We have performed measurements of an integrated circuit named PXD18k designed for hybrid pixel semiconductor detectors used in X-ray imaging applications. The PXD18k integrated circuit, fabricated in CMOS 180 nm technology, has dimensions of 9.64 mm Multiplication-Sign 20 mm and contains approximately 26 million transistors. The core of the IC is a matrix of 96 Multiplication-Sign 192 pixels with 100 {mu}m Multiplication-Sign 100 {mu}m pixel size. Each pixel works in a single photon counting mode. A single pixel contains two charge sensitive amplifiers with Krummenacher feedback scheme, two shapers, two discriminators (with independent thresholds A and B) and two 16-bit ripple counters. The data are read out via eight low voltage differential signaling (LVDS) outputs with 100 Mbps rate. The power consumption is dominated by analog blocks and it is about 23 {mu}W/pixel. The effective peaking time at the discriminator input is 30 ns and is mainly determined by the time constants of the charge sensitive amplifier (CSA). The gain is equal to 42.5 {mu}V/e{sup -} and the equivalent noise charge is 168 e{sup -} rms (with bump-bonded silicon pixel detector). Thanks to the use of trim DACs in each pixel, the effective threshold spread at the discriminator input is only 1.79 mV. The dead time of the front end electronics for a standard setting is 172 ns (paralyzable model). In the standard readout mode (when the data collection time is separated from the time necessary to readout data from the chip) the PXD18k IC works with two energy thresholds per pixel. The PXD18k can also be operated in the continuous readout mode (with a zero dead time) where one can select the number of bits readout from each pixel to optimize the PXD18k frame rate. For example, for reading out 16 bits/pixel the frame rate is 2.7 kHz and for 4 bits/pixel it rises to 7.1 kHz.

  10. A Novel Topology of Hybrid HVDC Circuit Breaker for VSC-HVDC Application

    Directory of Open Access Journals (Sweden)

    Van-Vinh Nguyen

    2017-10-01

    Full Text Available The use of high voltage direct current (HVDC circuit breakers (CBs with the capabilities of bidirectional fault interruption, reclosing, and rebreaking can improve the reliable and safe operation of HVDC grids. Although several topologies of CBs have been proposed to perform these capabilities, the limitation of these topologies is either high on-state losses or long time interruption in the case bidirectional fault current interruption. Long time interruption results in the large magnitude of the fault current in the voltage source converter based HVDC (VSC-HVDC system due to the high rate of rise of fault current. This paper proposes a new topology of hybrid CB (HCB with lower conduction loss and lower interruption time to solve the problems. The proposed topology is based on the inverse current injection method, which uses the capacitor to enforce the fault current to zero. In the case of the bidirectional fault current interruption, the capacitor does not change its polarity after identifying the direction of fault current, which can reduce the interruption time accordingly. A switching control algorithm for the proposed topology is presented in detail. Different operation modes of proposed HCB, such as normal current mode, breaking fault current mode, discharging, and reversing capacitor voltage modes after clearing the fault, are considered in the proposed algorithm. The proposed topology with the switching control algorithm is tested in a simulation-based system. Different simulation scenarios such as temporary and permanent faults are carried out to verify the performance of the proposed topology. The simulation is performed in the Matlab/Simulink environment.

  11. CRRES microelectronics test package (MEP)

    International Nuclear Information System (INIS)

    Mullen, E.G.; Ray, K.P.

    1993-01-01

    The Microelectronics Test Package (MEP) flown on board the Combined Release and Radiation Effects Satellite (CRRES) contained over 60 device types and approximately 400 total devices which were tested for both single event upset (SEU) and total dose (parametric degradation and annealing). A description of the experiment, the method of testing devices, and the structure of data acquisition are presented. Sample flight data are shown. These included SEUs from a GaAs 1 K RAM during the March 1991 solar flare, and a comparison between passive shielding and a specially designed spot shielding package

  12. IP validation in remote microelectronics testing

    Science.gov (United States)

    Osseiran, Adam; Eshraghian, Kamran; Lachowicz, Stefan; Zhao, Xiaoli; Jeffery, Roger; Robins, Michael

    2004-03-01

    This paper presents the test and validation of FPGA based IP using the concept of remote testing. It demonstrates how a virtual tester environment based on a powerful, networked Integrated Circuit testing facility, aimed to complement the emerging Australian microelectronics based research and development, can be employed to perform the tasks beyond the standard IC test. IC testing in production consists in verifying the tested products and eliminating defective parts. Defects could have a number of different causes, including process defects, process migration and IP design and implementation errors. One of the challenges in semiconductor testing is that while current fault models are used to represent likely faults (stuck-at, delay, etc.) in a global context, they do not account for all possible defects. Research in this field keeps growing but the high cost of ATE is preventing a large community from accessing test and verification equipment to validate innovative IP designs. For these reasons a world class networked IC teletest facility has been established in Australia under the support of the Commonwealth government. The facility is based on a state-of-the-art semiconductor tester operating as a virtual centre spanning Australia and accessible internationally. Through a novel approach the teletest network provides virtual access to the tester on which the DUT has previously been placed. The tester software is then accessible as if the designer is sitting next to the tester. This paper presents the approach used to test and validate FPGA based IPs using this remote test approach.

  13. Use of COTS microelectronics in radiation environments

    International Nuclear Information System (INIS)

    Winokur, P.S.; Lum, G.K.; Shaneyfelt, M.R.; Sexton, F.W.; Hash, G.L.; Scott, L.

    1999-01-01

    This paper addresses key issues for the cost-effective use of COTS (Commercially available Off The Shelf) microelectronics in radiation environments that enable circuit or system designers to manage risks and ensure mission success. They review several factors and tradeoffs affecting the successful application of COTS parts including (1) hardness assurance and qualification issues, (2) system hardening techniques, and (3) life-cycle costs. The paper also describes several experimental studies that address trends in total-dose, transient, and single-event radiation hardness as COTS technology scales to smaller feature sizes. As an example, the level at which dose-rate upset occurs in Samsung SRAMs increases from 1.4 x 10 8 rad(Si)/s for a 256K SRAM to 7.7 x 10 9 rad(Si)/s for a 4M SRAM, indicating unintentional hardening improvements in the design of process of a commercial technology. Additional experiments were performed to quantify variations in radiation hardness for COTS parts. In one study, only small (10--15%) variations were found in the dose-rate upset and latchup thresholds for Samsung 4M SRAMs from three different date codes. In another study, irradiations of 4M SRAMs from Samsung, Hitachi, and Toshiba indicate large differences in total-dose radiation hardness. The paper attempts to carefully define terms and clear up misunderstandings about the definitions of COTS and radiation-hardened (RH) technology

  14. Carbon-ionogel supercapacitors for integrated microelectronics

    Science.gov (United States)

    Leung, Greg; Smith, Leland; Lau, Jonathan; Dunn, Bruce; Chui, Chi On

    2016-01-01

    To exceed the performance limits of dielectric capacitors in microelectronic circuit applications, we design and demonstrate on-chip coplanar electric double-layer capacitors (EDLCs), or supercapacitors, employing carbon-coated gold electrodes with ionogel electrolyte. The formation of carbon-coated microelectrodes is accomplished by solution processing and results in a ten-fold increase in EDLC capacitance compared to bare gold electrodes without carbon. At frequencies up to 10 Hz, an areal capacitance of 2.1 pF μm-2 is achieved for coplanar carbon-ionogel EDLCs with 10 μm electrode gaps and 0.14 mm2 electrode area. Our smallest devices, comprised of 5 μm electrode gaps and 80 μm2 of active electrode area, reach areal capacitance values of ˜0.3 pF μm-2 at frequencies up to 1 kHz, even without carbon. To our knowledge, these are the highest reported values to date for on-chip EDLCs with sub-mm2 areas. A physical EDLC model is developed through the use of computer-aided simulations for design exploration and optimization of coplanar EDLCs. Through modeling and comparison with experimental data, we highlight the importance of reducing the electrode gap and electrolyte resistance to achieve maximum performance from on-chip EDLCs.

  15. Free-space coherent optical communication with orbital angular, momentum multiplexing/demultiplexing using a hybrid 3D photonic integrated circuit.

    Science.gov (United States)

    Guan, Binbin; Scott, Ryan P; Qin, Chuan; Fontaine, Nicolas K; Su, Tiehui; Ferrari, Carlo; Cappuzzo, Mark; Klemens, Fred; Keller, Bob; Earnshaw, Mark; Yoo, S J B

    2014-01-13

    We demonstrate free-space space-division-multiplexing (SDM) with 15 orbital angular momentum (OAM) states using a three-dimensional (3D) photonic integrated circuit (PIC). The hybrid device consists of a silica planar lightwave circuit (PLC) coupled to a 3D waveguide circuit to multiplex/demultiplex OAM states. The low excess loss hybrid device is used in individual and two simultaneous OAM states multiplexing and demultiplexing link experiments with a 20 Gb/s, 1.67 b/s/Hz quadrature phase shift keyed (QPSK) signal, which shows error-free performance for 379,960 tested bits for all OAM states.

  16. Experimental investigation of single-phase microjet cooling of microelectronics

    Science.gov (United States)

    Rusowicz, Artur; Leszczyński, Maciej; Grzebielec, Andrzej; Laskowski, Rafał

    2015-09-01

    Development of electronics, which aims to improve the functionality of electronic devices, aims at increasing the packing of transistors in a chip and boosting clock speed (the number of elementary operations per second). While pursuing this objective, one encounters the growing problem of thermal nature. Each switching of the logic state at the elementary level of an integrated circuit is associated with the generation of heat. Due to a large number of transistors and high clock speeds, higher heat flux is emitted by the microprocessor to a level where the component needs to be intensively cooled, or otherwise it will become overheated. This paper presents the cooling of microelectronic components using microjets.

  17. Guanidinium: A Route to Enhanced Carrier Lifetime and Open-Circuit Voltage in Hybrid Perovskite Solar Cells.

    Science.gov (United States)

    De Marco, Nicholas; Zhou, Huanping; Chen, Qi; Sun, Pengyu; Liu, Zonghao; Meng, Lei; Yao, En-Ping; Liu, Yongsheng; Schiffer, Andy; Yang, Yang

    2016-02-10

    Hybrid perovskites have shown astonishing power conversion efficiencies owed to their remarkable absorber characteristics including long carrier lifetimes, and a relatively substantial defect tolerance for solution-processed polycrystalline films. However, nonradiative charge carrier recombination at grain boundaries limits open circuit voltages and consequent performance improvements of perovskite solar cells. Here we address such recombination pathways and demonstrate a passivation effect through guanidinium-based additives to achieve extraordinarily enhanced carrier lifetimes and higher obtainable open circuit voltages. Time-resolved photoluminescence measurements yield carrier lifetimes in guanidinium-based films an order of magnitude greater than pure-methylammonium counterparts, giving rise to higher device open circuit voltages and power conversion efficiencies exceeding 17%. A reduction in defect activation energy of over 30% calculated via admittance spectroscopy and confocal fluorescence intensity mapping indicates successful passivation of recombination/trap centers at grain boundaries. We speculate that guanidinium ions serve to suppress formation of iodide vacancies and passivate under-coordinated iodine species at grain boundaries and within the bulk through their hydrogen bonding capability. These results present a simple method for suppressing nonradiative carrier loss in hybrid perovskites to further improve performances toward highly efficient solar cells.

  18. Standardization of Schwarz-Christoffel transformation for engineering design of semiconductor and hybrid integrated-circuit elements

    Science.gov (United States)

    Yashin, A. A.

    1985-04-01

    A semiconductor or hybrid structure into a calculable two-dimensional region mapped by the Schwarz-Christoffel transformation and a universal algorithm can be constructed on the basis of Maxwell's electro-magnetic-thermal similarity principle for engineering design of integrated-circuit elements. The design procedure involves conformal mapping of the original region into a polygon and then the latter into a rectangle with uniform field distribution, where conductances and capacitances are calculated, using tabulated standard mapping functions. Subsequent synthesis of a device requires inverse conformal mapping. Devices adaptable as integrated-circuit elements are high-resistance film resistors with periodic serration, distributed-resistance film attenuators with high transformation ratio, coplanar microstrip lines, bipolar transistors, directional couplers with distributed coupling to microstrip lines for microwave bulk devices, and quasirregular smooth matching transitions from asymmetric to coplanar microstrip lines.

  19. Design and fabrication of advanced hybrid circuits for high energy physics

    International Nuclear Information System (INIS)

    Haller, G.M.; Moss, J.; Freytag, D.R.; Nelson, D.; Yim, A.; Lo, C.C.

    1987-10-01

    Current design and fabrication techniques of hybrid devices are explained for the Drift Chamber and the Liquid Argon Calorimeter for the Stanford Linear Collider Large Detector (SLD) at SLAC. Methods of developing layouts, ranging from hand-cut templates to advanced designs utilizing CAD tools with special hybrid design software were applied. Physical and electrical design rules for good yield and performance are discussed. Fabrication and assembly of the SLD hybrids are described. 7 refs., 10 figs

  20. Feasibility analysis of a novel hybrid-type superconducting circuit breaker in multi-terminal HVDC networks

    International Nuclear Information System (INIS)

    Khan, Umer Amir; Lee, Jong-Geon; Seo, In-Jin; Amir, Faisal; Lee, Bang-Wook

    2015-01-01

    Highlights: • A novel hybrid-type superconducting circuit breaker (SDCCB) is proposed. • SDCCB has SFCL located in the main current path to limit the fault current until the final trip signal. • SFCL in SDCCB suppressed the fast rising DC fault current for a predefined time. • SFCL significantly reduced the DC current breaking stress on SDCCB components. • SDCCB isolated the HVDC faulty line in three, four, and five converter stations MTDC. - Abstract: Voltage source converter-based HVDC systems (VSC-HVDC) are a better alternative than conventional thyristor-based HVDC systems, especially for developing multi-terminal HVDC systems (MTDC). However, one of the key obstacles in developing MTDC is the absence of an adequate protection system that can quickly detect faults, locate the faulty line and trip the HVDC circuit breakers (DCCBs) to interrupt the DC fault current. In this paper, a novel hybrid-type superconducting circuit breaker (SDCCB) is proposed and feasibility analyses of its application in MTDC are presented. The SDCCB has a superconducting fault current limiter (SFCL) located in the main current path to limit fault currents until the final trip signal is received. After the trip signal the IGBT located in the main line commutates the current into a parallel line where DC current is forced to zero by the combination of IGBTs and surge arresters. Fault simulations for three-, four- and five-terminal MTDC were performed and SDCCB performance was evaluated in these MTDC. Passive current limitation by SFCL caused a significant reduction of fault current interruption stress in the SDCCB. It was observed that the DC current could change direction in MTDC after a fault and the SDCCB was modified to break the DC current in both the forward and reverse directions. The simulation results suggest that the proposed SDCCB could successfully suppress the DC fault current, cause a timely interruption, and isolate the faulty HVDC line in MTDC.

  1. Feasibility analysis of a novel hybrid-type superconducting circuit breaker in multi-terminal HVDC networks

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Umer Amir [Hanyang University, Sa-3dong, Sangrok-gu, Ansan 426-791 (Korea, Republic of); National University of Sciences and Technology, PNEC Campus, Habib Rehmatullah Road, Karachi (Pakistan); Lee, Jong-Geon; Seo, In-Jin [Hanyang University, Sa-3dong, Sangrok-gu, Ansan 426-791 (Korea, Republic of); Amir, Faisal [National University of Sciences and Technology, PNEC Campus, Habib Rehmatullah Road, Karachi (Pakistan); Lee, Bang-Wook, E-mail: bangwook@hanyang.ac.kr [Hanyang University, Sa-3dong, Sangrok-gu, Ansan 426-791 (Korea, Republic of)

    2015-11-15

    Highlights: • A novel hybrid-type superconducting circuit breaker (SDCCB) is proposed. • SDCCB has SFCL located in the main current path to limit the fault current until the final trip signal. • SFCL in SDCCB suppressed the fast rising DC fault current for a predefined time. • SFCL significantly reduced the DC current breaking stress on SDCCB components. • SDCCB isolated the HVDC faulty line in three, four, and five converter stations MTDC. - Abstract: Voltage source converter-based HVDC systems (VSC-HVDC) are a better alternative than conventional thyristor-based HVDC systems, especially for developing multi-terminal HVDC systems (MTDC). However, one of the key obstacles in developing MTDC is the absence of an adequate protection system that can quickly detect faults, locate the faulty line and trip the HVDC circuit breakers (DCCBs) to interrupt the DC fault current. In this paper, a novel hybrid-type superconducting circuit breaker (SDCCB) is proposed and feasibility analyses of its application in MTDC are presented. The SDCCB has a superconducting fault current limiter (SFCL) located in the main current path to limit fault currents until the final trip signal is received. After the trip signal the IGBT located in the main line commutates the current into a parallel line where DC current is forced to zero by the combination of IGBTs and surge arresters. Fault simulations for three-, four- and five-terminal MTDC were performed and SDCCB performance was evaluated in these MTDC. Passive current limitation by SFCL caused a significant reduction of fault current interruption stress in the SDCCB. It was observed that the DC current could change direction in MTDC after a fault and the SDCCB was modified to break the DC current in both the forward and reverse directions. The simulation results suggest that the proposed SDCCB could successfully suppress the DC fault current, cause a timely interruption, and isolate the faulty HVDC line in MTDC.

  2. Materials contamination control in the microelectronic industry

    International Nuclear Information System (INIS)

    Tardif, F.

    1993-01-01

    This paper deals with many aspects of the contamination of materials in the microelectronic industry. The contamination's control of chemicals, process gases, silicon and the survey of the ions free water's purity are treated. (TEC). 29 figs., 7 tabs

  3. Microelectronics to nanoelectronics materials, devices & manufacturability

    CERN Document Server

    Kaul, Anupama B

    2012-01-01

    Composed of contributions from top experts, Microelectronics to Nanoelectronics: Materials, Devices and Manufacturability offers a detailed overview of important recent scientific and technological developments in the rapidly evolving nanoelectronics arena.Under the editorial guidance and technical expertise of noted materials scientist Anupama B. Kaul of California Institute of Technology's Jet Propulsion Lab, this book captures the ascent of microelectronics into the nanoscale realm. It addresses a wide variety of important scientific and technological issues in nanoelectronics research and

  4. Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

    Science.gov (United States)

    Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

    2017-01-01

    Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

  5. Swarm intelligence-based approach for optimal design of CMOS differential amplifier and comparator circuit using a hybrid salp swarm algorithm

    Science.gov (United States)

    Asaithambi, Sasikumar; Rajappa, Muthaiah

    2018-05-01

    In this paper, an automatic design method based on a swarm intelligence approach for CMOS analog integrated circuit (IC) design is presented. The hybrid meta-heuristics optimization technique, namely, the salp swarm algorithm (SSA), is applied to the optimal sizing of a CMOS differential amplifier and the comparator circuit. SSA is a nature-inspired optimization algorithm which mimics the navigating and hunting behavior of salp. The hybrid SSA is applied to optimize the circuit design parameters and to minimize the MOS transistor sizes. The proposed swarm intelligence approach was successfully implemented for an automatic design and optimization of CMOS analog ICs using Generic Process Design Kit (GPDK) 180 nm technology. The circuit design parameters and design specifications are validated through a simulation program for integrated circuit emphasis simulator. To investigate the efficiency of the proposed approach, comparisons have been carried out with other simulation-based circuit design methods. The performances of hybrid SSA based CMOS analog IC designs are better than the previously reported studies.

  6. Towards co-packaging of photonics and microelectronics in existing manufacturing facilities

    Science.gov (United States)

    Janta-Polczynski, Alexander; Cyr, Elaine; Bougie, Jerome; Drouin, Alain; Langlois, Richard; Childers, Darrell; Takenobu, Shotaro; Taira, Yoichi; Lichoulas, Ted W.; Kamlapurkar, Swetha; Engelmann, Sebastian; Fortier, Paul; Boyer, Nicolas; Barwicz, Tymon

    2018-02-01

    The impact of integrated photonics on optical interconnects is currently muted by challenges in photonic packaging and in the dense integration of photonic modules with microelectronic components on printed circuit boards. Single mode optics requires tight alignment tolerance for optical coupling and maintaining this alignment in a cost-efficient package can be challenging during thermal excursions arising from downstream microelectronic assembly processes. In addition, the form factor of typical fiber connectors is incompatible with the dense module integration expected on printed circuit boards. We have implemented novel approaches to interfacing photonic chips to standard optical fibers. These leverage standard high throughput microelectronic assembly tooling and self-alignment techniques resulting in photonic packaging that is scalable in manufacturing volume and in the number of optical IOs per chip. In addition, using dense optical fiber connectors with space-efficient latching of fiber patch cables results in compact module size and efficient board integration, bringing the optics closer to the logic chip to alleviate bandwidth bottlenecks. This packaging direction is also well suited for embedding optics in multi-chip modules, including both photonic and microelectronic chips. We discuss the challenges and rewards in this type of configuration such as thermal management and signal integrity.

  7. Development of hybrid micro circuit based multi-channel programmable HV supply for BARC-pelletron experimental facility

    International Nuclear Information System (INIS)

    Manna, A.; Thombare, S.; Moitra, S.; Kuswarkar, M.; Punna, M.; Nair, P.M.; Diwakar, M.P.; Pithawa, C.K.

    2013-01-01

    Electronics Division, BARC has developed a Multi channel programmable HV bias supply system for charge particle detector array for use in BARC-TIFR Pelletron-LINAC facility. The HV supplies are compact in size due to use of hybrid micro-circuits developed indigenously and are modular in construction to achieve versatility, scalability and serviceability. All programming operations and monitoring are performed remotely through PC over Ethernet. Each supply has a built-in over voltage, over current and thermal overload protections for safe operation and employs a Zero Voltage Switching (ZVS) technique to reduce thermal stress on the inverter switches. This article describes salient design aspects and performance of the HV supply system. (author)

  8. Micro-Electronic Nose System

    Science.gov (United States)

    Zee, Frank C.

    2011-12-01

    The ability to "smell" various gas vapors and complex odors is important for many applications such as environmental monitoring for detecting toxic gases as well as quality control in the processing of food, cosmetics, and other chemical products for commercial industries. Mimicking the architecture of the biological nose, a miniature electronic nose system was designed and developed consisting of an array of sensor devices, signal-processing circuits, and software pattern-recognition algorithms. The array of sensors used polymer/carbon-black composite thin-films, which would swell or expand reversibly and reproducibly and cause a resistance change upon exposure to a wide variety of gases. Two types of sensor devices were fabricated using silicon micromachining techniques to form "wells" that confined the polymer/carbon-black to a small and specific area. The first type of sensor device formed the "well" by etching into the silicon substrate using bulk micromachining. The second type built a high-aspect-ratio "well" on the surface of a silicon wafer using SU-8 photoresist. Two sizes of "wells" were fabricated: 500 x 600 mum² and 250 x 250 mum². Custom signal-processing circuits were implemented on a printed circuit board and as an application-specific integrated-circuit (ASIC) chip. The circuits were not only able to measure and amplify the small resistance changes, which corresponded to small ppm (parts-per-million) changes in gas concentrations, but were also adaptable to accommodate the various characteristics of the different thin-films. Since the thin-films were not specific to any one particular gas vapor, an array of sensors each containing a different thin-film was used to produce a distributed response pattern when exposed to a gas vapor. Pattern recognition, including a clustering algorithm and two artificial neural network algorithms, was used to classify the response pattern and identify the gas vapor or odor. Two gas experiments were performed, one

  9. Feasibility analysis of a novel hybrid-type superconducting circuit breaker in multi-terminal HVDC networks

    Science.gov (United States)

    Khan, Umer Amir; Lee, Jong-Geon; Seo, In-Jin; Amir, Faisal; Lee, Bang-Wook

    2015-11-01

    Voltage source converter-based HVDC systems (VSC-HVDC) are a better alternative than conventional thyristor-based HVDC systems, especially for developing multi-terminal HVDC systems (MTDC). However, one of the key obstacles in developing MTDC is the absence of an adequate protection system that can quickly detect faults, locate the faulty line and trip the HVDC circuit breakers (DCCBs) to interrupt the DC fault current. In this paper, a novel hybrid-type superconducting circuit breaker (SDCCB) is proposed and feasibility analyses of its application in MTDC are presented. The SDCCB has a superconducting fault current limiter (SFCL) located in the main current path to limit fault currents until the final trip signal is received. After the trip signal the IGBT located in the main line commutates the current into a parallel line where DC current is forced to zero by the combination of IGBTs and surge arresters. Fault simulations for three-, four- and five-terminal MTDC were performed and SDCCB performance was evaluated in these MTDC. Passive current limitation by SFCL caused a significant reduction of fault current interruption stress in the SDCCB. It was observed that the DC current could change direction in MTDC after a fault and the SDCCB was modified to break the DC current in both the forward and reverse directions. The simulation results suggest that the proposed SDCCB could successfully suppress the DC fault current, cause a timely interruption, and isolate the faulty HVDC line in MTDC.

  10. A Bistable Microelectronic Circuit for Sensing Extremely Low Electric Field

    Science.gov (United States)

    2010-01-01

    potential system describing the ferromagnetic ma- terials employed in the fluxgate magnetometers .1 To give a clearer picture of the separations between...this behavior in a specific prototype system comprised of three unidirectionally coupled ferromagnetic cores, the basis of a coupled core fluxgate ... magnetometer . Another prototypical quartic poten- tial based system of coupled overdamped Duffing elements has been applied to describe the dynamics

  11. Hierarchical hybrid control of manipulators: Artificial intelligence in large scale integrated circuits

    Science.gov (United States)

    Greene, P. H.

    1972-01-01

    Both in practical engineering and in control of muscular systems, low level subsystems automatically provide crude approximations to the proper response. Through low level tuning of these approximations, the proper response variant can emerge from standardized high level commands. Such systems are expressly suited to emerging large scale integrated circuit technology. A computer, using symbolic descriptions of subsystem responses, can select and shape responses of low level digital or analog microcircuits. A mathematical theory that reveals significant informational units in this style of control and software for realizing such information structures are formulated.

  12. Experimental investigation of single-phase microjet cooling of microelectronics

    Directory of Open Access Journals (Sweden)

    Rusowicz Artur

    2015-09-01

    Full Text Available Development of electronics, which aims to improve the functionality of electronic devices, aims at increasing the packing of transistors in a chip and boosting clock speed (the number of elementary operations per second. While pursuing this objective, one encounters the growing problem of thermal nature. Each switching of the logic state at the elementary level of an integrated circuit is associated with the generation of heat. Due to a large number of transistors and high clock speeds, higher heat flux is emitted by the microprocessor to a level where the component needs to be intensively cooled, or otherwise it will become overheated. This paper presents the cooling of microelectronic components using microjets.

  13. Radiation-Induced Prompt Photocurrents in Microelectronics Physics

    CERN Document Server

    Dodd, P E; Buller, D L; Doyle, B L; Vizkelethy, G; Walsh, D S

    2003-01-01

    The effects of photocurrents in nuclear weapons induced by proximal nuclear detonations are well known and remain a serious hostile environment threat for the US stockpile. This report describes the final results of an LDRD study of the physical phenomena underlying prompt photocurrents in microelectronic devices and circuits. The goals of this project were to obtain an improved understanding of these phenomena, and to incorporate improved models of photocurrent effects into simulation codes to assist designers in meeting hostile radiation requirements with minimum build and test cycles. We have also developed a new capability on the ion microbeam accelerator in Sandia's Ion Beam Materials Research Laboratory (the Transient Radiation Microscope, or TRM) to supply ionizing radiation in selected micro-regions of a device. The dose rates achieved in this new facility approach those possible with conventional large-scale dose-rate sources at Sandia such as HERMES III and Saturn. It is now possible to test the phy...

  14. Hermeticity testing of MEMS and microelectronic packages

    CERN Document Server

    Costello, Suzanne

    2013-01-01

    Packaging of microelectronics has been developing since the invention of the transistor in 1947. With the increasing complexity and decreasing size of the die, packaging requirements have continued to change. A step change in package requirements came with the introduction of the Micro-Electro-Mechanical System (MEMS) whereby interactions with the external environment are, in some cases, required.This resource is a rapid, definitive reference on hermetic packaging for the MEMS and microelectronics industry, giving practical guidance on traditional and newly developed test methods. This book in

  15. Radiation Effects and Hardening Techniques for Spacecraft Microelectronics

    Science.gov (United States)

    Gambles, J. W.; Maki, G. K.

    2002-01-01

    The natural radiation from the Van Allen belts, solar flares, and cosmic rays found outside of the protection of the earth's atmosphere can produce deleterious effects on microelectronics used in space systems. Historically civil space agencies and the commercial satellite industry have been able to utilize components produced in special radiation hardened fabrication process foundries that were developed during the 1970s and 1980s under sponsorship of the Departments of Defense (DoD) and Energy (DoE). In the post--cold war world the DoD and DoE push to advance the rad--hard processes has waned. Today the available rad--hard components lag two-plus technology node generations behind state- of-the-art commercial technologies. As a result space craft designers face a large performance gap when trying to utilize available rad--hard components. Compounding the performance gap problems, rad--hard components are becoming increasingly harder to get. Faced with the economic pitfalls associated with low demand versus the ever increasing investment required for integrated circuit manufacturing equipment most sources of rad--hard parts have simply exited this market in recent years, leaving only two domestic US suppliers of digital rad--hard components. This paper summarizes the radiation induced mechanisms that can cause digital microelectronics to fail in space, techniques that can be applied to mitigate these failure mechanisms, and ground based testing used to validate radiation hardness/tolerance. The radiation hardening techniques can be broken down into two classes, Hardness By Process (HBP) and Hardness By Design (HBD). Fortunately many HBD techniques can be applied to commercial fabrication processes providing space craft designer with radiation tolerant Application Specific Integrated Circuits (ASICs) that can bridge the performance gap between the special HBP foundries and the commercial state-of-the-art performance.

  16. Interconnect mechanisms in microelectronic packaging

    Science.gov (United States)

    Roma, Maria Penafrancia C.

    Global economic, environmental and market developments caused major impact in the microelectronics industry. Astronomical rise of gold metal prices over the last decade shifted the use of copper and silver alloys as bonding wires. Environmental legislation on the restriction of the use of Pb launched worldwide search for lead-free solders and platings. Finally, electrical and digital uses demanded smaller, faster and cheaper devices. Ultra-fine pitch bonding, decreasing bond wire sizes and hard to bond substrates have put the once-robust stitch bond in the center of reliability issues due to stitch bond lift or open wires .Unlike the ball bond, stitch bonding does not lead to intermetallic compound formation but adhesion is dependent on mechanical deformation, interdiffusion, solid solution formation, void formation and mechanical interlocking depending on the wire material, bond configuration, substrate type , thickness and surface condition. Using Au standoff stitch bonds on NiPdAu plated substrates eliminated stitch bond lift even when the Au and Pd layers are reduced. Using the Matano-Boltzmann analysis on a STEM (Scanning Transmission Analysis) concentration profile the interdiffusion coefficient is measured to be 10-16 cm 2/s. Wire pull strength data showed that the wire pull strength is 0.062N and increases upon stress testing. Meanwhile, coating the Cu wire with Pd, not only increases oxidation resistance but also improved adhesion due to the formation of a unique interfacial adhesion layers. Adhesion strength as measured by pull showed the Cu wire bonded to Ag plated Cu substrate (0.132N) to be stronger than the Au wire bonded on the same substrate (0.124N). Ag stitch bonded to Au is predicted to be strong but surface modification made the adhesion stronger. However, on the Ag ball bonded to Al showed multiple IMC formation with unique morphology exposed by ion milling and backscattered scanning electron microscopy. Adding alloying elements in the Ag wire

  17. Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics.

    Science.gov (United States)

    Weigel, Peter O; Savanier, Marc; DeRose, Christopher T; Pomerene, Andrew T; Starbuck, Andrew L; Lentine, Anthony L; Stenger, Vincent; Mookherjea, Shayan

    2016-03-01

    We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.

  18. Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics

    Science.gov (United States)

    Weigel, Peter O.; Savanier, Marc; DeRose, Christopher T.; Pomerene, Andrew T.; Starbuck, Andrew L.; Lentine, Anthony L.; Stenger, Vincent; Mookherjea, Shayan

    2016-01-01

    We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost. PMID:26927022

  19. A bidirectional soft switched ultracapacitor interface circuit for hybrid electric vehicles

    Energy Technology Data Exchange (ETDEWEB)

    Farzanehfard, Hosein; Beyragh, Dawood Shekari; Adib, Ehsan [Electrical and Computer Engineering Department, Isfahan University of Technology, Isfahan 84156 (Iran)

    2008-12-15

    Ultracapacitors are used as auxiliary elements beside batteries to increase peak power capability and battery life in hybrid electric vehicles. In such a configuration, a bidirectional high efficiency converter is required as an interface between ultracapacitors and batteries. Since the voltage level of ultracapacitors and batteries are different, the interface must be able to increase or decrease the voltage level in each power flow direction while limiting the current. This paper presents a zero voltage transition (ZVT) buck-and-boost converter for ultracapacitors interface. All the switches in the proposed converter are soft switched to reduce switching losses and increase efficiency. The converter operational modes are analyzed and its performance is discussed. Finally, the experimental results from a 150 W laboratory prototype are presented which justify the theoretical analysis. (author)

  20. Government Microelectronics Assessment for Trust (GOMAT)

    Science.gov (United States)

    Berg, Melanie D.; LaBel, Kenneth A.

    2018-01-01

    NASA Electronic Parts and Packaging (NEPP) is developing a process to be employed in critical applications. The framework assesses levels of trust and assurance in microelectronic systems. The process is being created with participation from a variety of organizations. We present a synopsis of the framework that includes contributions from The Aerospace Corporation.

  1. Dictionary of microelectronics and microcomputer technology

    International Nuclear Information System (INIS)

    Attiyate, Y.H.; Shah, R.R.

    1984-01-01

    This bilingual dictionary (German-English and English-German) is to give the general public a clearer idea of the terminology of microelectronics, microcomputers, data processing, and computer science. Each part contains about 7500 terms frequently encountered in practice, about 2000 of which are supplemented by precise explanations. (orig./HP) [de

  2. International Conference on Microelectronics, Electromagnetics and Telecommunications

    CERN Document Server

    Rao, N; Kumar, S; Raj, C; Rao, V; Sarma, G

    2016-01-01

    This volume contains 73 papers presented at ICMEET 2015: International Conference on Microelectronics, Electromagnetics and Telecommunications. The conference was held during 18 – 19 December, 2015 at Department of Electronics and Communication Engineering, GITAM Institute of Technology, GITAM University, Visakhapatnam, INDIA. This volume contains papers mainly focused on Antennas, Electromagnetics, Telecommunication Engineering and Low Power VLSI Design.

  3. Microelectronics in power electronics and electrical drives

    Energy Technology Data Exchange (ETDEWEB)

    1982-01-01

    From October, 1214, 1982 at Darmstadt (FRG) a meeting took place on ''Microelectronics in power electronics and Electrical Drives''. This volume contains the papers of the 65 lectures, held at the symposium. For each of the 10 papers dealing with problems on electric-powered vehicles a separate subject analysis has been carried out.

  4. Microelectronics used for Semiconductor Imaging Detectors

    CERN Document Server

    Heijne, Erik H M

    2010-01-01

    Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

  5. Hybrid Spintronic-CMOS Spiking Neural Network with On-Chip Learning: Devices, Circuits, and Systems

    Science.gov (United States)

    Sengupta, Abhronil; Banerjee, Aparajita; Roy, Kaushik

    2016-12-01

    Over the past decade, spiking neural networks (SNNs) have emerged as one of the popular architectures to emulate the brain. In SNNs, information is temporally encoded and communication between neurons is accomplished by means of spikes. In such networks, spike-timing-dependent plasticity mechanisms require the online programing of synapses based on the temporal information of spikes transmitted by spiking neurons. In this work, we propose a spintronic synapse with decoupled spike-transmission and programing-current paths. The spintronic synapse consists of a ferromagnet-heavy-metal heterostructure where the programing current through the heavy metal generates spin-orbit torque to modulate the device conductance. Low programing energy and fast programing times demonstrate the efficacy of the proposed device as a nanoelectronic synapse. We perform a simulation study based on an experimentally benchmarked device-simulation framework to demonstrate the interfacing of such spintronic synapses with CMOS neurons and learning circuits operating in the transistor subthreshold region to form a network of spiking neurons that can be utilized for pattern-recognition problems.

  6. Tribochemical investigation of microelectronic materials

    Science.gov (United States)

    Kulkarni, Milind Sudhakar

    To achieve efficient planarization with reduced device dimensions in integrated circuits, a better understanding of the physics, chemistry, and the complex interplay involved in chemical mechanical planarization (CMP) is needed. The CMP process takes place at the interface of the pad and wafer in the presence of the fluid slurry medium. The hardness of Cu is significantly less than the slurry abrasive particles which are usually alumina or silica. It has been accepted that a surface layer can protect the Cu surface from scratching during CMP. Four competing mechanisms in materials removal have been reported: the chemical dissolution of Cu, the mechanical removal through slurry abrasives, the formation of thin layer of Cu oxide and the sweeping surface material by slurry flow. Despite the previous investigation of Cu removal, the electrochemical properties of Cu surface layer is yet to be understood. The motivation of this research was to understand the fundamental aspects of removal mechanisms in terms of electrochemical interactions, chemical dissolution, mechanical wear, and factors affecting planarization. Since one of the major requirements in CMP is to have a high surface finish, i.e., low surface roughness, optimization of the surface finish in reference to various parameters was emphasized. Three approaches were used in this research: in situ measurement of material removal, exploration of the electropotential activation and passivation at the copper surface and modeling of the synergistic electrochemical-mechanical interactions on the copper surface. In this research, copper polishing experiments were conducted using a table top tribometer. A potentiostat was coupled with this tribometer. This combination enabled the evaluation of important variables such as applied pressure, polishing speed, slurry chemistry, pH, materials, and applied DC potential. Experiments were designed to understand the combined and individual effect of electrochemical interactions

  7. [Application of microelectronics CAD tools to synthetic biology].

    Science.gov (United States)

    Madec, Morgan; Haiech, Jacques; Rosati, Élise; Rezgui, Abir; Gendrault, Yves; Lallement, Christophe

    2017-02-01

    Synthetic biology is an emerging science that aims to create new biological functions that do not exist in nature, based on the knowledge acquired in life science over the last century. Since the beginning of this century, several projects in synthetic biology have emerged. The complexity of the developed artificial bio-functions is relatively low so that empirical design methods could be used for the design process. Nevertheless, with the increasing complexity of biological circuits, this is no longer the case and a large number of computer aided design softwares have been developed in the past few years. These tools include languages for the behavioral description and the mathematical modelling of biological systems, simulators at different levels of abstraction, libraries of biological devices and circuit design automation algorithms. All of these tools already exist in other fields of engineering sciences, particularly in microelectronics. This is the approach that is put forward in this paper. © 2017 médecine/sciences – Inserm.

  8. RF and microwave microelectronics packaging II

    CERN Document Server

    Sturdivant, Rick

    2017-01-01

    Reviews RF, microwave, and microelectronics assembly process, quality control, and failure analysis Bridges the gap between low cost commercial and hi-res RF/Microwave packaging technologies Engages in an in-depth discussion of challenges in packaging and assembly of advanced high-power amplifiers This book presents the latest developments in packaging for high-frequency electronics. It is a companion volume to “RF and Microwave Microelectronics Packaging” (2010) and covers the latest developments in thermal management, electrical/RF/thermal-mechanical designs and simulations, packaging and processing methods, and other RF and microwave packaging topics. Chapters provide detailed coverage of phased arrays, T/R modules, 3D transitions, high thermal conductivity materials, carbon nanotubes and graphene advanced materials, and chip size packaging for RF MEMS. It appeals to practicing engineers in the electronic packaging and high-frequency electronics domain, and to academic researchers interested in underst...

  9. Laser processing of ceramics for microelectronics manufacturing

    Science.gov (United States)

    Sposili, Robert S.; Bovatsek, James; Patel, Rajesh

    2017-03-01

    Ceramic materials are used extensively in the microelectronics, semiconductor, and LED lighting industries because of their electrically insulating and thermally conductive properties, as well as for their high-temperature-service capabilities. However, their brittleness presents significant challenges for conventional machining processes. In this paper we report on a series of experiments that demonstrate and characterize the efficacy of pulsed nanosecond UV and green lasers in machining ceramics commonly used in microelectronics manufacturing, such as aluminum oxide (alumina) and aluminum nitride. With a series of laser pocket milling experiments, fundamental volume ablation rate and ablation efficiency data were generated. In addition, techniques for various industrial machining processes, such as shallow scribing and deep scribing, were developed and demonstrated. We demonstrate that lasers with higher average powers offer higher processing rates with the one exception of deep scribes in aluminum nitride, where a lower average power but higher pulse energy source outperformed a higher average power laser.

  10. Carbon nanotubes as heat dissipaters in microelectronics

    DEFF Research Database (Denmark)

    Pérez Paz, Alejandro; García-Lastra, Juan María; Markussen, Troels

    2013-01-01

    We review our recent modelling work of carbon nanotubes as potential candidates for heat dissipation in microelectronics cooling. In the first part, we analyze the impact of nanotube defects on their thermal transport properties. In the second part, we investigate the loss of thermal properties...... of nanotubes in presence of an interface with various substances, including air and water. Comparison with previous works is established whenever is possible....

  11. 3D-Printed Disposable Wireless Sensors with Integrated Microelectronics for Large Area Environmental Monitoring

    KAUST Repository

    Farooqui, Muhammad Fahad

    2017-05-19

    Large area environmental monitoring can play a crucial role in dealing with crisis situations. However, it is challenging as implementing a fixed sensor network infrastructure over large remote area is economically unfeasible. This work proposes disposable, compact, dispersible 3D-printed wireless sensor nodes with integrated microelectronics which can be dispersed in the environment and work in conjunction with few fixed nodes for large area monitoring applications. As a proof of concept, the wireless sensing of temperature, humidity, and H2S levels are shown which are important for two critical environmental conditions namely forest fires and industrial leaks. These inkjet-printed sensors and an antenna are realized on the walls of a 3D-printed cubic package which encloses the microelectronics developed on a 3D-printed circuit board. Hence, 3D printing and inkjet printing are uniquely combined in order to realize a low-cost, fully integrated wireless sensor node.

  12. Photopolymerizable liquid encapsulants for microelectronic devices

    Science.gov (United States)

    Baikerikar, Kiran K.

    2000-10-01

    Plastic encapsulated microelectronic devices consist of a silicon chip that is physically attached to a leadframe, electrically interconnected to input-output leads, and molded in a plastic that is in direct contact with the chip, leadframe, and interconnects. The plastic is often referred to as the molding compound, and is used to protect the chip from adverse mechanical, thermal, chemical, and electrical environments. Encapsulation of microelectronic devices is typically accomplished using a transfer molding process in which the molding compound is cured by heat. Most transfer molding processes suffer from significant problems arising from the high operating temperatures and pressures required to fill the mold. These aspects of the current process can lead to thermal stresses, incomplete mold filling, and wire sweep. In this research, a new strategy for encapsulating microelectronic devices using photopolymerizable liquid encapsulants (PLEs) has been investigated. The PLEs consist of an epoxy novolac-based vinyl ester resin (˜25 wt.%), fused silica filler (70--74 wt.%), and a photoinitiator, thermal initiator, and silane coupling agent. For these encapsulants, the use of light, rather than heat, to initiate the polymerization allows precise control over when the reaction starts, and therefore completely decouples the mold filling and the cure. The low viscosity of the PLEs allows for low operating pressures and minimizes problems associated with wire sweep. In addition, the in-mold cure time for the PLEs is equivalent to the in-mold cure times of current transfer molding compounds. In this thesis, the thermal and mechanical properties, as well as the viscosity and adhesion of photopolymerizable liquid encapsulants, are reported in order to demonstrate that a UV-curable formulation can have the material properties necessary for microelectronic encapsulation. In addition, the effects of the illumination time, postcure time, fused silica loading, and the inclusion

  13. Integrated Microelectronics and Photonics Active Cooling Technology (IMPACT)

    National Research Council Canada - National Science Library

    Bowers, John

    2003-01-01

    ...) coolers and their integration with microelectronics and photonics. The majority of our research involves the development of this new technology through nanostructured materials design and growth...

  14. Heavy ions testing experimental results on programmable integrated circuits

    International Nuclear Information System (INIS)

    Velazco, R.; Provost-Grellier, A.

    1988-01-01

    The natural radiation environment in space has been shown to produce anomalies in satellite-borne microelectronics. It becomes then mandatory to define qualification strategies allowing to choose the less vulnerable circuits. In this paper, is presented a strategy devoted to one of the most critical effects, the soft errors (so called upset). The method addresses programmable integrated circuits i.e. circuits able to execute an instruction or command set. Experimental results on representative circuits will illustrate the approach. 11 refs [fr

  15. Hybrid finite difference/finite element solution method development for non-linear superconducting magnet and electrical circuit breakdown transient analysis

    International Nuclear Information System (INIS)

    Kraus, H.G.; Jones, J.L.

    1986-01-01

    The problem of non-linear superconducting magnet and electrical protection circuit system transients is formulated. To enable studying the effects of coil normalization transients, coil distortion (due to imbalanced magnetic forces), internal coil arcs and shorts, and other normal and off-normal circuit element responses, the following capabilities are included: temporal, voltage and current-dependent voltage sources, current sources, resistors, capacitors and inductors. The concept of self-mutual inductance, and the form of the associated inductance matrix, is discussed for internally shorted coils. This is a Kirchhoff's voltage loop law and Kirchhoff's current node law formulation. The non-linear integrodifferential equation set is solved via a unique hybrid finite difference/integral finite element technique. (author)

  16. Evaluation of 320x240 pixel LEC GaAs Schottky barrier X-ray imaging arrays, hybridized to CMOS readout circuit based on charge integration

    CERN Document Server

    Irsigler, R; Alverbro, J; Borglind, J; Froejdh, C; Helander, P; Manolopoulos, S; O'Shea, V; Smith, K

    1999-01-01

    320x240 pixels GaAs Schottky barrier detector arrays were fabricated, hybridized to silicon readout circuits, and subsequently evaluated. The detector chip was based on semi-insulating LEC GaAs material. The square shaped pixel detector elements were of the Schottky barrier type and had a pitch of 38 mu m. The GaAs wafers were thinned down prior to the fabrication of the ohmic back contact. After dicing, the chips were indium bump, flip-chip bonded to CMOS readout circuits based on charge integration, and finally evaluated. A bias voltage between 50 and 100 V was sufficient to operate the detector. Results on I-V characteristics, noise behaviour and response to X-ray radiation are presented. Images of various objects and slit patterns were acquired by using a standard dental imaging X-ray source. The work done was a part of the XIMAGE project financed by the European Community (Brite-Euram). (author)

  17. Wireless Data Transmission at Terahertz Carrier Waves Generated from a Hybrid InP-Polymer Dual Tunable DBR Laser Photonic Integrated Circuit.

    Science.gov (United States)

    Carpintero, Guillermo; Hisatake, Shintaro; de Felipe, David; Guzman, Robinson; Nagatsuma, Tadao; Keil, Norbert

    2018-02-14

    We report for the first time the successful wavelength stabilization of two hybrid integrated InP/Polymer DBR lasers through optical injection. The two InP/Polymer DBR lasers are integrated into a photonic integrated circuit, providing an ideal source for millimeter and Terahertz wave generation by optical heterodyne technique. These lasers offer the widest tuning range of the carrier wave demonstrated to date up into the Terahertz range, about 20 nm (2.5 THz) on a single photonic integrated circuit. We demonstrate the application of this source to generate a carrier wave at 330 GHz to establish a wireless data transmission link at a data rate up to 18 Gbit/s. Using a coherent detection scheme we increase the sensitivity by more than 10 dB over direct detection.

  18. Hybrid solar cells with outstanding short-circuit currents based on a room temperature soft-chemical strategy: the case of P3HT:Ag2S.

    Science.gov (United States)

    Lei, Yan; Jia, Huimin; He, Weiwei; Zhang, Yange; Mi, Liwei; Hou, Hongwei; Zhu, Guangshan; Zheng, Zhi

    2012-10-24

    P3HT:Ag(2)S hybrid solar cells with broad absorption from the UV to NIR band were directly fabricated on ITO glass by using a room temperature, low energy consumption, and low-cost soft-chemical strategy. The resulting Ag(2)S nanosheet arrays facilitate the construction of a perfect percolation structure with organic P3HT to form ordered bulk heterojunctions (BHJ); without interface modification, the assembled P3HT:Ag(2)S device exhibits outstanding short-circuit current densities (J(sc)) around 20 mA cm(-2). At the current stage, the optimized device exhibited a power conversion efficiency of 2.04%.

  19. Electromigration of intergranular voids in metal films for microelectronic interconnects

    CERN Document Server

    Averbuch, A; Ravve, I

    2003-01-01

    Voids and cracks often occur in the interconnect lines of microelectronic devices. They increase the resistance of the circuits and may even lead to a fatal failure. Voids may occur inside a single grain, but often they appear on the boundary between two grains. In this work, we model and analyze numerically the migration and evolution of an intergranular void subjected to surface diffusion forces and external voltage applied to the interconnect. The grain-void interface is considered one-dimensional, and the physical formulation of the electromigration and diffusion model results in two coupled fourth-order one-dimensional time-dependent PDEs. The boundary conditions are specified at the triple points, which are common to both neighboring grains and the void. The solution of these equations uses a finite difference scheme in space and a Runge-Kutta integration scheme in time, and is also coupled to the solution of a static Laplace equation describing the voltage distribution throughout the grain. Since the v...

  20. Technology library modeling for information-driven circuit synthesis

    NARCIS (Netherlands)

    Jozwiak, L.; Bieganski, S.J.

    2008-01-01

    Due to weaknesses in circuit synthesis methods used in todaypsilas CAD tools, the opportunities created by modern microelectronic technology cannot effectively be exploited. This paper considers major issues and requirements of circuit synthesis for the nano CMOS technologies, and discusses our new

  1. Multi-format all-optical processing based on a large-scale, hybridly integrated photonic circuit.

    Science.gov (United States)

    Bougioukos, M; Kouloumentas, Ch; Spyropoulou, M; Giannoulis, G; Kalavrouziotis, D; Maziotis, A; Bakopoulos, P; Harmon, R; Rogers, D; Harrison, J; Poustie, A; Maxwell, G; Avramopoulos, H

    2011-06-06

    We investigate through numerical studies and experiments the performance of a large scale, silica-on-silicon photonic integrated circuit for multi-format regeneration and wavelength-conversion. The circuit encompasses a monolithically integrated array of four SOAs inside two parallel Mach-Zehnder structures, four delay interferometers and a large number of silica waveguides and couplers. Exploiting phase-incoherent techniques, the circuit is capable of processing OOK signals at variable bit rates, DPSK signals at 22 or 44 Gb/s and DQPSK signals at 44 Gbaud. Simulation studies reveal the wavelength-conversion potential of the circuit with enhanced regenerative capabilities for OOK and DPSK modulation formats and acceptable quality degradation for DQPSK format. Regeneration of 22 Gb/s OOK signals with amplified spontaneous emission (ASE) noise and DPSK data signals degraded with amplitude, phase and ASE noise is experimentally validated demonstrating a power penalty improvement up to 1.5 dB.

  2. A hybrid pulse combining topology utilizing the combination of modularized avalanche transistor Marx circuits, direct pulse adding, and transmission line transformer.

    Science.gov (United States)

    Li, Jiangtao; Zhao, Zheng; Sun, Yi; Liu, Yuhao; Ren, Ziyuan; He, Jiaxin; Cao, Hui; Zheng, Minjun

    2017-03-01

    Numerous applications driven by pulsed voltage require pulses to be with high amplitude, high repetitive frequency, and narrow width, which could be satisfied by utilizing avalanche transistors. The output improvement is severely limited by power capacities of transistors. Pulse combining is an effective approach to increase the output amplitude while still adopting conventional pulse generating modules. However, there are drawbacks in traditional topologies including the saturation tendency of combining efficiency and waveform oscillation. In this paper, a hybrid pulse combining topology was adopted utilizing the combination of modularized avalanche transistor Marx circuits, direct pulse adding, and transmission line transformer. The factors affecting the combining efficiency were determined including the output time synchronization of Marx circuits, and the quantity and position of magnetic cores. The numbers of the parallel modules and the stages were determined by the output characteristics of each combining method. Experimental results illustrated the ability of generating pulses with 2-14 kV amplitude, 7-11 ns width, and a maximum 10 kHz repetitive rate on a matched 50-300 Ω resistive load. The hybrid topology would be a convinced pulse combining method for similar nanosecond pulse generators based on the solid-state switches.

  3. Applications of focused ion beams in microelectronics

    International Nuclear Information System (INIS)

    Broughton, C.; Beale, M.I.J.; Deshmukh, V.G.I.

    1986-04-01

    We present the conclusions of the RSRE programme on the application of focused ion beams in microelectronics and review the literature published in this field. We discuss the design and performance of focused beam implanters and the viability of their application to semiconductor device fabrication. Applications in the areas of lithography, direct implantation and micromachining are discussed in detail. Comparisons are made between the use of focused ion beams and existing techniques for these fabrication processes with a strong emphasis placed on the relative throughputs. We present results on a novel spot size measurement technique and the effect of beam heating on resist. We also present the results of studies into implantation passivation of resist to oxygen plasma attack as basis for a dry development lithography scheme. A novel lithography system employing flood electron exposure from a photocathode which is patterned by a focused ion beam which can also be used to repair mask defects is considered. (author)

  4. Effects of microelectronics on industrial level measuring

    International Nuclear Information System (INIS)

    Schaudel, D.E.

    1979-01-01

    Microelectronic elements and production technologies have begun to change industrial level measurement, and this trend will continue. Spectacular breakthroughs cannot be expected, due to the major demand of reliability and to administrative constraints. The demand for transducers has increased with the advance of low-cost computer hardware. Electronics makes well-known method of measurements more universally applicable; it helps to realize new methods, and to design multifunctional transducers which always give the necessary signal for process guidance. The effects on society and environment are wholly positive: More and better measuring technologies permit a better utilisation of raw materials and energies, help to prevent environmental damage, and to raise the standard of living. Negative results are not to be expected on this sector. (orig./RW) [de

  5. Heteromagnetic Microelectronics Microsystems of Active Type

    CERN Document Server

    Ignatiev, Alexander A

    2010-01-01

    Heteromagnetic Microelectronics: Microsystems of Active Type, by Alexander A. Ignatiev of Saratov State University and Alexander V. Lyashenko of JSC Research Institute Tantal in Russia, offers a very detailed and specialized account of the author's research and development of heteromagnetic materials and devices. The book is based on original material from the author's programs of designing heteromagnetic microsystems. Polyvalent, multiple parameter magneto-semiconductor microsystems are described and the book reports on extensive experimental and theoretical results of research in a range of frequencies up to 1000 GHz. For the first time the direction of satisfying criteria, and burst technologies, which can make a subject of discovery, are discussed in great detail. This book is intended for post-graduate students and researchers specializing in the design and application of heteromagnetic materials and devices. Alexander A. Ignatiev is author of Magnetoelectronics of Microwaves and Extremely High Frequenci...

  6. Future trends in microelectronics journey into the unknown

    CERN Document Server

    Xu, Jimmy; Zaslavsky, Alexander

    2016-01-01

    Presents the developments in microelectronic-related fields, with comprehensive insight from a number of leading industry professionals. The book presents the future developments and innovations in the developing field of microelectronics. The book’s chapters contain contributions from various authors, all of whom are leading industry professionals affiliated either with top universities, major semiconductor companies, or government laboratories, discussing the evolution of their profession. A wide range of microelectronic-related fields are examined, including solid-state electronics, material science, optoelectronics, bioelectronics, and renewable energies. The topics covered range from fundamental physical principles, materials and device technologies, and major new market opportunities.

  7. Processes and procedures for a thin film multilevel hybrid circuit metallization system based on W--Au/SiO2/Al/SiO2

    International Nuclear Information System (INIS)

    Hampy, R.E.; Knauss, G.L.; Komarek, E.E.; Kramer, D.K.; Villanueva, J.

    1976-04-01

    The processes and procedures developed for the deposition and photodefinition of a W-Au/SiO 2 /Al/SiO 2 hybrid circuit metallization system for the SLL Micro Actuator are described. The metallization system affords a high degree of miniaturization and permits effective interconnection of a mixture of semiconductor devices and passive components with both gold and aluminum terminations without creating undesirable gold-aluminum interfaces. Sputtered tungsten-gold is the first level conductor except at crossovers where tungsten only is used and aluminum is the second level conductor. Silicon dioxide serves as an insulator between the tungsten and aluminum for crossovers. Vias in the insulating layer permit tungsten-aluminum interconnections where desired. A second layer of silicon dioxide is deposited over the metallization and opened for all gold and aluminum bonding pads. Substrates used were polished sapphire and fine grained alumina. The metallization is capable of withstanding processing temperatures up to 400 0 C for short times

  8. Enabling laser applications in microelectronics manufacturing

    Science.gov (United States)

    Delmdahl, Ralph; Brune, Jan; Fechner, Burkhard; Senczuk, Rolf

    2016-02-01

    In this experimental study, we report on high-pulse-energy excimer laser drilling into high-performance build-up films which are pivotal in microelectronics manufacturing. Build-up materials ABF-GX13 from Ajinomoto as well as ZS-100 from Zeon Corporation are evaluated with respect to their viability for economic excimer laser-based micro-via formation. Excimer laser mask imaging projection at laser wavelengths of 193, 248 and 308 nm is employed to generate matrices of smaller micro-vias with different diameters and via pitches. High drilling quality is achievable for all excimer laser wavelengths with the fastest ablation rates measured in the case of 248 and 308 nm wavelengths. The presence of glass fillers in build-up films as in the ABF-GX13 material poses some limitations to the minimum achievable via diameter. However, surprisingly good drilling results are obtainable as long as the filler dimensions are well below the diameter of the micro-vias. Sidewall angles of vias are controllable by adjusting the laser energy density and pulse number. In this work, the structuring capabilities of excimer lasers in build-up films as to taper angle variations, attainable via diameters, edge-stop behavior and ablation rates will be elucidated.

  9. Air cooling of refrigerating loops: 'dry-hybrid' systems; Refroidissement par air des circuits frigorifiques: les systemes ''secs hybrides''

    Energy Technology Data Exchange (ETDEWEB)

    Becker, W. [Societe Jaggi-Gunter (Switzerland)

    2003-02-01

    Different type of cooling systems can be implemented on coldness production plants. The choice very often depends on the initial investment, but from a technical and economical point of view, this choice is not necessary the best solution. Thus, it can be useful to know the different existing systems and their exploitation costs with respect to the expected needs. A particular solution which uses a 'dry-hybrid' cooler is presented in this study: 1 - open-loop evaporative cooler; 2 - open-loop evaporative cooler with intermediate exchanger; 3 - close-loop evaporative cooler; 4 - dry-cooler; 5 - dry cooler with spraying in the air flow way; 6 - dry cooler with counterflow spraying; 7 - hybrid dry cooler; 8 - example of a realization in Germany: technical and economical value of the project, description of compared solutions and hypotheses, interpretation of results. (J.S.)

  10. High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Xianshu eLuo

    2015-04-01

    Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

  11. Plan for advanced microelectronics processing technology application

    Energy Technology Data Exchange (ETDEWEB)

    Goland, A.N.

    1990-10-01

    The ultimate objective of the tasks described in the research agreement was to identify resources primarily, but not exclusively, within New York State that are available for the development of a Center for Advanced Microelectronics Processing (CAMP). Identification of those resources would enable Brookhaven National Laboratory to prepare a program plan for the CAMP. In order to achieve the stated goal, the principal investigators undertook to meet the key personnel in relevant NYS industrial and academic organizations to discuss the potential for economic development that could accompany such a Center and to gauge the extent of participation that could be expected from each interested party. Integrated of these discussions was to be achieved through a workshop convened in the summer of 1990. The culmination of this workshop was to be a report (the final report) outlining a plan for implementing a Center in the state. As events unfolded, it became possible to identify the elements of a major center for x-ray lithography on Lone Island at Brookhaven National Laboratory. The principal investigators were than advised to substitute a working document based upon that concept in place of a report based upon the more general CAMP workshop originally envisioned. Following that suggestion from the New York State Science and Technology Foundation, the principals established a working group consisting of representatives of the Grumman Corporation, Columbia University, the State University of New York at Stony Brook, and Brookhaven National Laboratory. Regular meetings and additional communications between these collaborators have produced a preproposal that constitutes the main body of the final report required by the contract. Other components of this final report include the interim report and a brief description of the activities which followed the establishment of the X-ray Lithography Center working group.

  12. Computer simulation of electromigration in microelectronics interconnect

    OpenAIRE

    Zhu, Xiaoxin

    2014-01-01

    Electromigration (EM) is a phenomenon that occurs in metal conductor carrying high density electric current. EM causes voids and hillocks that may lead to open or short circuits in electronic devices. Avoiding these failures therefore is a major challenge in semiconductor device and packaging design and manufacturing, and it will become an even greater challenge for the semiconductor assembly and packaging industry as electronics components and interconnects get smaller and smaller. According...

  13. Implementation of Microelectronics Track in Electronics Engineering in a Philippines State University

    Directory of Open Access Journals (Sweden)

    Gil B. Barte

    2015-11-01

    Full Text Available The evolving trends in electronics continuous to attract students to take upElectronics Engineering.However, it also adds to discipline implementation complexities.Institutions of Higher Learning offering this program must adapt to this realities to avoid obsolescence. This paper looked at Batangas State University, in the Philippines,ongoingimplementation of the Microelectronics track under the Electronics Engineering (ECEProgram. It describes the restructuring done to the ECE curriculum to overcome the enormous complexity inherent in microelectronics design and the teaching pedagogy adopted to promote active learning. The ongoing program has produced encouraging outcomes:1students were able to design, and simulate complex gate CMOS circuits using EDA tools, in the four(4 course electives identified for the track; 2 the culture of independent learning among students improvement in students soft skills, communication skills, time-management and teamwork skill,; 3. useof free and web-based tools overcome the issue of high cost of license for EDA tools and seminar/training for continuous upgrading of faculty. Another encouraging outcome was the acceptance of the student-centered teaching approach used, Problem-Based Learning (PBL,in enhancing the students learning experience.

  14. Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

    KAUST Repository

    Isakov, Ivan

    2016-12-29

    We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

  15. Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

    KAUST Repository

    Isakov, Ivan; Paterson, Alexandra F.; Solomeshch, Olga; Tessler, Nir; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Fei, Zhuping; Heeney, Martin; Anthopoulos, Thomas D.

    2016-01-01

    We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

  16. Photoluminescence and Photoconductivity to Assess Maximum Open-Circuit Voltage and Carrier Transport in Hybrid Perovskites and Other Photovoltaic Materials.

    Science.gov (United States)

    Braly, Ian L; Stoddard, Ryan J; Rajagopal, Adharsh; Jen, Alex K-Y; Hillhouse, Hugh W

    2018-06-06

    Photovoltaic (PV) device development is much more expensive and time consuming than the development of the absorber layer alone. This perspective focuses on two methods that can be used to rapidly assess and develop PV absorber materials independent of device development. The absorber material properties of quasi-Fermi level splitting and carrier diffusion length under steady effective one-Sun illumination are indicators of a material's ability to achieve high VOC and JSC. These two material properties can be rapidly and simultaneously assessed with steady-state absolute intensity photoluminescence and photoconductivity measurements. As a result, these methods are extremely useful for predicting the quality and stability of PV materials prior to PV device development. Here, we summarize the methods, discuss their strengths and weaknesses, and compare photoluminescence and photoconductivity results with device performance for four hybrid perovskite compositions of various bandgaps (1.35 to 1.82 eV), CISe, CIGSe, and CZTSe.

  17. A Spaceborne Synthetic Aperture Radar Partial Fixed-Point Imaging System Using a Field- Programmable Gate Array-Application-Specific Integrated Circuit Hybrid Heterogeneous Parallel Acceleration Technique.

    Science.gov (United States)

    Yang, Chen; Li, Bingyi; Chen, Liang; Wei, Chunpeng; Xie, Yizhuang; Chen, He; Yu, Wenyue

    2017-06-24

    With the development of satellite load technology and very large scale integrated (VLSI) circuit technology, onboard real-time synthetic aperture radar (SAR) imaging systems have become a solution for allowing rapid response to disasters. A key goal of the onboard SAR imaging system design is to achieve high real-time processing performance with severe size, weight, and power consumption constraints. In this paper, we analyse the computational burden of the commonly used chirp scaling (CS) SAR imaging algorithm. To reduce the system hardware cost, we propose a partial fixed-point processing scheme. The fast Fourier transform (FFT), which is the most computation-sensitive operation in the CS algorithm, is processed with fixed-point, while other operations are processed with single precision floating-point. With the proposed fixed-point processing error propagation model, the fixed-point processing word length is determined. The fidelity and accuracy relative to conventional ground-based software processors is verified by evaluating both the point target imaging quality and the actual scene imaging quality. As a proof of concept, a field- programmable gate array-application-specific integrated circuit (FPGA-ASIC) hybrid heterogeneous parallel accelerating architecture is designed and realized. The customized fixed-point FFT is implemented using the 130 nm complementary metal oxide semiconductor (CMOS) technology as a co-processor of the Xilinx xc6vlx760t FPGA. A single processing board requires 12 s and consumes 21 W to focus a 50-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384.

  18. A Spaceborne Synthetic Aperture Radar Partial Fixed-Point Imaging System Using a Field- Programmable Gate Array−Application-Specific Integrated Circuit Hybrid Heterogeneous Parallel Acceleration Technique

    Directory of Open Access Journals (Sweden)

    Chen Yang

    2017-06-01

    Full Text Available With the development of satellite load technology and very large scale integrated (VLSI circuit technology, onboard real-time synthetic aperture radar (SAR imaging systems have become a solution for allowing rapid response to disasters. A key goal of the onboard SAR imaging system design is to achieve high real-time processing performance with severe size, weight, and power consumption constraints. In this paper, we analyse the computational burden of the commonly used chirp scaling (CS SAR imaging algorithm. To reduce the system hardware cost, we propose a partial fixed-point processing scheme. The fast Fourier transform (FFT, which is the most computation-sensitive operation in the CS algorithm, is processed with fixed-point, while other operations are processed with single precision floating-point. With the proposed fixed-point processing error propagation model, the fixed-point processing word length is determined. The fidelity and accuracy relative to conventional ground-based software processors is verified by evaluating both the point target imaging quality and the actual scene imaging quality. As a proof of concept, a field- programmable gate array−application-specific integrated circuit (FPGA-ASIC hybrid heterogeneous parallel accelerating architecture is designed and realized. The customized fixed-point FFT is implemented using the 130 nm complementary metal oxide semiconductor (CMOS technology as a co-processor of the Xilinx xc6vlx760t FPGA. A single processing board requires 12 s and consumes 21 W to focus a 50-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384.

  19. 3D microelectronic packaging from fundamentals to applications

    CERN Document Server

    Goyal, Deepak

    2017-01-01

    This volume provides a comprehensive reference for graduate students and professionals in both academia and industry on the fundamentals, processing details, and applications of 3D microelectronic packaging, an industry trend for future microelectronic packages. Chapters written by experts cover the most recent research results and industry progress in the following areas: TSV, die processing, micro bumps, direct bonding, thermal compression bonding, advanced materials, heat dissipation, thermal management, thermal mechanical modeling, quality, reliability, fault isolation, and failure analysis of 3D microelectronic packages. Numerous images, tables, and didactic schematics are included throughout. This essential volume equips readers with an in-depth understanding of all aspects of 3D packaging, including packaging architecture, processing, thermal mechanical and moisture related reliability concerns, common failures, developing areas, and future challenges, providing insights into key areas for future resea...

  20. Kovar Micro Heat Pipe Substrates for Microelectronic Cooling

    Energy Technology Data Exchange (ETDEWEB)

    Benson, David A.; Burchett, Steven N.; Kravitz, Stanley H.; Robino, Charles V.; Schmidt, Carrie; Tigges, Chris P.

    1999-04-01

    We describe the development of a new technology for cooling microelectronics. This report documents the design, fabrication, and prototype testing of micro scale heat pipes embedded in a flat plate substrate or heat spreader. A thermal model tuned to the test results enables us to describe heat transfer in the prototype, as well as evaluate the use of this technology in other applications. The substrate walls are Kovar alloy, which has a coefficient of thermal expansion close to that of microelectronic die. The prototype designs integrating micro heat pipes with Kovar enhance thermal conductivity by more than a factor of two over that of Kovar alone, thus improving the cooling of micro-electronic die.

  1. Photonic integrated circuits : a new approach to laser technology

    NARCIS (Netherlands)

    Piramidowicz, R.; Stopinski, S.T.; Lawniczuk, K.; Welikow, K.; Szczepanski, P.; Leijtens, X.J.M.; Smit, M.K.

    2012-01-01

    In this work a brief review on photonic integrated circuits (PICs) is presented with a specific focus on integrated lasers and amplifiers. The work presents the history of development of the integration technology in photonics and its comparison to microelectronics. The major part of the review is

  2. A self-regulating valve for single-phase liquid cooling of microelectronics

    International Nuclear Information System (INIS)

    Donose, Radu; De Volder, Michaël; Peirs, Jan; Reynaerts, Dominiek

    2011-01-01

    This paper reports on the design, optimization and testing of a self-regulating valve for single-phase liquid cooling of microelectronics. Its purpose is to maintain the integrated circuit (IC) at constant temperature and to reduce power consumption by diminishing flow generated by the pump as a function of the cooling requirements. It uses a thermopneumatic actuation principle that combines the advantages of zero power consumption and small size in combination with a high flow rate and low manufacturing costs. The valve actuation is provided by the thermal expansion of a liquid (actuation fluid) which, at the same time, actuates the valve and provides feed-back sensing. A maximum flow rate of 38 kg h −1 passes through the valve for a heat load up to 500 W. The valve is able to reduce the pumping power by up to 60% and it has the capability to maintain the IC at a more uniform temperature.

  3. Approximation for Transient of Nonlinear Circuits Using RHPM and BPES Methods

    Directory of Open Access Journals (Sweden)

    H. Vazquez-Leal

    2013-01-01

    Full Text Available The microelectronics area constantly demands better and improved circuit simulation tools. Therefore, in this paper, rational homotopy perturbation method and Boubaker Polynomials Expansion Scheme are applied to a differential equation from a nonlinear circuit. Comparing the results obtained by both techniques revealed that they are effective and convenient.

  4. Application of ionizing radiation processing in biomedical engineering and microelectronics

    International Nuclear Information System (INIS)

    Hongfej, H.; Jilan, W.

    1988-01-01

    The applied radiation chemistry has made great contributions to the development of polymeric industrial materials by the characteristics reaction means such as crosslinking, graft copolymerization and low-temperature or solid-phase polymerization, and become a important field on peaceful use of atomic energy. A brief review on the applications of ionizing radiation processing in biomedical engineering and microelectronics is presented. The examples of this technique were the studies on biocompatible and biofunctional polymers for medical use and on resists of lithography in microelectronics

  5. Applications of ionizing radiation processing in biomedical engineering and microelectronics

    International Nuclear Information System (INIS)

    Ha Hongfei; Wu Jilan

    1987-01-01

    The applied radiation chemistry has made great contributions to the development of polymeric industrial materials by the characteristic reaction means such as corsslinking, graft copolymerization and low-temperature or solid-phase polymerization, and become an important field on peaceful use of atomic energy. A brief review on the applications of ionizing radiation processing in biomedical engineering and microelectronics is presented. The examples of this techique were the studies on biocompatible and biofunctional polymers for medical use and on resists of lithography in microelectronics. (author)

  6. Wireless Integrated Microelectronic Vacuum Sensor System

    Science.gov (United States)

    Krug, Eric; Philpot, Brian; Trott, Aaron; Lawrence, Shaun

    2013-01-01

    NASA Stennis Space Center's (SSC's) large rocket engine test facility requires the use of liquid propellants, including the use of cryogenic fluids like liquid hydrogen as fuel, and liquid oxygen as an oxidizer (gases which have been liquefied at very low temperatures). These fluids require special handling, storage, and transfer technology. The biggest problem associated with transferring cryogenic liquids is product loss due to heat transfer. Vacuum jacketed piping is specifically designed to maintain high thermal efficiency so that cryogenic liquids can be transferred with minimal heat transfer. A vacuum jacketed pipe is essentially two pipes in one. There is an inner carrier pipe, in which the cryogenic liquid is actually transferred, and an outer jacket pipe that supports and seals the vacuum insulation, forming the "vacuum jacket." The integrity of the vacuum jacketed transmission lines that transfer the cryogenic fluid from delivery barges to the test stand must be maintained prior to and during engine testing. To monitor the vacuum in these vacuum jacketed transmission lines, vacuum gauge readings are used. At SSC, vacuum gauge measurements are done on a manual rotation basis with two technicians, each using a handheld instrument. Manual collection of vacuum data is labor intensive and uses valuable personnel time. Additionally, there are times when personnel cannot collect the data in a timely fashion (i.e., when a leak is detected, measurements must be taken more often). Additionally, distribution of this data to all interested parties can be cumbersome. To simplify the vacuum-gauge data collection process, automate the data collection, and decrease the labor costs associated with acquiring these measurements, an automated system that monitors the existing gauges was developed by Invocon, Inc. For this project, Invocon developed a Wireless Integrated Microelectronic Vacuum Sensor System (WIMVSS) that provides the ability to gather vacuum

  7. Electrical Qualification of the Pre-production of Analogue Opto-Hybrid Circuits for the CMS Tracker Inner Barrel and Inner Disks.

    CERN Document Server

    Brunetti, Maria Teresa; Postolache, Vasile; Ricci, Daniel

    2003-01-01

    A pre-production of 50 analogue opto-hybrid (AOH) circuits to be used in the front-end electronics of the CMS tracker was extensively tested before the incoming start of the massive production. A total of 4000 AOHs are required for the tracker inner barrel (TIB) and inner disk (TID) construction. The electrical response of the TIB/TID AOH pre-production was tested at 25°C both for the static and dynamic behavior. A subset of five AOHs was cooled and tested at -10°C and -15°C. A passive thermal cycle test from -20°C to 25°C was done on a sample of 22 pre-production AOHs, including the previous subset, to measure the mechanical response at possible variations of the nominal tracker temperature of -10°C. Four AOHs from the subset were also kept at -15°C for 20 hours in order to check the long-term stability of the response. The measurements were obtained with the automatic test equip ment (ATE) built for the fast qualification during the massive AOH production and with a custom setup dedicat...

  8. Radiation effects in advanced microelectronics technologies

    Science.gov (United States)

    Johnston, A. H.

    1998-06-01

    The pace of device scaling has increased rapidly in recent years. Experimental CMOS devices have been produced with feature sizes below 0.1 /spl mu/m, demonstrating that devices with feature sizes between 0.1 and 0.25 /spl mu/m will likely be available in mainstream technologies after the year 2000. This paper discusses how the anticipated changes in device dimensions and design are likely to affect their radiation response in space environments. Traditional problems, such as total dose effects, SEU and latchup are discussed, along with new phenomena. The latter include hard errors from heavy ions (microdose and gate-rupture errors), and complex failure modes related to advanced circuit architecture. The main focus of the paper is on commercial devices, which are displacing hardened device technologies in many space applications. However, the impact of device scaling on hardened devices is also discussed.

  9. Modern Microelectronics as Hardware Face of Information Technologies

    NARCIS (Netherlands)

    Jozwiak, L.; Luba, T.; Zbierzchowski, B.

    2000-01-01

    Development trends of contemporary microelectronics, as well as its influence on development of widely grasped information systems are discussed. It was proved, that about this development decide not only quantitative, but also qualitative reasons, such as technology of manufacturing and technology

  10. Micro-electronics and employment in the Japanese automobile industry.

    OpenAIRE

    Watanabe, S

    1984-01-01

    ILO pub-WEP pub. Working paper on the employment effects of microelectronics technological change and industrial robots in the motor vehicle industry in Japan - examines industrial processes, labour productivity, job requirements of automobile workers, effects on the subcontracting system and small scale industry, diffusion patterns and prospects, etc. Bibliography, references and statistical tables.

  11. Oscillator circuits

    CERN Document Server

    Graf, Rudolf F

    1996-01-01

    This series of circuits provides designers with a quick source for oscillator circuits. Why waste time paging through huge encyclopedias when you can choose the topic you need and select any of the specialized circuits sorted by application?This book in the series has 250-300 practical, ready-to-use circuit designs, with schematics and brief explanations of circuit operation. The original source for each circuit is listed in an appendix, making it easy to obtain additional information.Ready-to-use circuits.Grouped by application for easy look-up.Circuit source listing

  12. Measuring circuits

    CERN Document Server

    Graf, Rudolf F

    1996-01-01

    This series of circuits provides designers with a quick source for measuring circuits. Why waste time paging through huge encyclopedias when you can choose the topic you need and select any of the specialized circuits sorted by application?This book in the series has 250-300 practical, ready-to-use circuit designs, with schematics and brief explanations of circuit operation. The original source for each circuit is listed in an appendix, making it easy to obtain additional information.Ready-to-use circuits.Grouped by application for easy look-up.Circuit source listings

  13. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  14. Integrated circuit design using design automation

    International Nuclear Information System (INIS)

    Gwyn, C.W.

    1976-09-01

    Although the use of computer aids to develop integrated circuits is relatively new at Sandia, the program has been very successful. The results have verified the utility of the in-house CAD design capability. Custom IC's have been developed in much shorter times than available through semiconductor device manufacturers. In addition, security problems were minimized and a saving was realized in circuit cost. The custom CMOS IC's were designed at less than half the cost of designing with conventional techniques. In addition to the computer aided design, the prototype fabrication and testing capability provided by the semiconductor development laboratory and microelectronics computer network allows the circuits to be fabricated and evaluated before the designs are transferred to the commercial semiconductor manufacturers for production. The Sandia design and prototype fabrication facilities provide the capability of complete custom integrated circuit development entirely within the ERDA laboratories

  15. PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

    Science.gov (United States)

    Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

    2012-12-01

    More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible

  16. Exploration Of `Click' Chemistry For Microelectronic Applications

    Science.gov (United States)

    Musa, Osama M.; Sridhar, Laxmisha M.

    The ‘Click’ chemistry was explored for low temperature snap cure and for possible use as an adhesion promoter in electronic applications. Several azide and alkyne resins were synthesized and their curing potential was evaluated with a special emphasis on exploring Cu(I) catalyst effect. The preliminary curing study in the absence of catalysts showed a strong dependence of cure temperatures on the electronic nature of alkynes. The cure temperatures showed a tendency to increase with decreasing electronegativity of the substituent on alkynes. The capability of Cu(I) catalysts to accelerate the ‘Click’ chemistry was demonstrated for the first time in bulk phase. Using several Cu(I) catalysts, the cure temperatures could be lowered by as much as 40-100°C compared to the control, depending on the nature of catalyst and the catalyst loading. We discovered a novel synergistic effect between Cu(I) and silver filler in lowering the cure temperatures. Using this combination, lower cure temperatures could be obtained than using either alone. Among several resins screened, one resin system has shown promise for 80°C snap-cure in which the aforementioned synergistic effect is operative. Solution phase ‘Click’ chemistry was employed for the synthesis of a hybrid triazole-epoxy resin system. This system was found to cure without added amine curative. The triazole group here serves as a linker as well as an internal adhesion promoter. To address the incompatibility and volatility issues, which arose during evaluation, a controlled oligomerization method has been developed using controlled heating of azides and alkynes in solution phase.

  17. The Principle of the Micro-Electronic Neural Bridge and a Prototype System Design.

    Science.gov (United States)

    Huang, Zong-Hao; Wang, Zhi-Gong; Lu, Xiao-Ying; Li, Wen-Yuan; Zhou, Yu-Xuan; Shen, Xiao-Yan; Zhao, Xin-Tai

    2016-01-01

    The micro-electronic neural bridge (MENB) aims to rebuild lost motor function of paralyzed humans by routing movement-related signals from the brain, around the damage part in the spinal cord, to the external effectors. This study focused on the prototype system design of the MENB, including the principle of the MENB, the neural signal detecting circuit and the functional electrical stimulation (FES) circuit design, and the spike detecting and sorting algorithm. In this study, we developed a novel improved amplitude threshold spike detecting method based on variable forward difference threshold for both training and bridging phase. The discrete wavelet transform (DWT), a new level feature coefficient selection method based on Lilliefors test, and the k-means clustering method based on Mahalanobis distance were used for spike sorting. A real-time online spike detecting and sorting algorithm based on DWT and Euclidean distance was also implemented for the bridging phase. Tested by the data sets available at Caltech, in the training phase, the average sensitivity, specificity, and clustering accuracies are 99.43%, 97.83%, and 95.45%, respectively. Validated by the three-fold cross-validation method, the average sensitivity, specificity, and classification accuracy are 99.43%, 97.70%, and 96.46%, respectively.

  18. Applicability of LET to single events in microelectronic structures

    Science.gov (United States)

    Xapsos, Michael A.

    1992-12-01

    LET is often used as a single parameter to determine the energy deposited in a microelectronic structure by a single event. The accuracy of this assumption is examined for ranges of ion energies and volumes of silicon appropriate for modern microelectronics. It is shown to be accurate only under very restricted conditions. Significant differences arise because (1) LET is related to energy lost by the ion, not energy deposited in the volume; and (2) LET is an average value and does not account for statistical variations in energy deposition. Criteria are suggested for determining when factors other than LET should be considered, and new analytical approaches are presented to account for them. One implication of these results is that improvements can be made in space upset rate predictions by incorporating the new methods into currently used codes such as CREME and CRUP.

  19. Performance Evaluation of Management Environment in Microelectronics Enterprise

    OpenAIRE

    Hui-ying Gao

    2013-01-01

    For the microelectronics manufacturing industries that have uncertain demand, high volume cost and Oligarchs characteristics, we often discuss the possibility of competitors on the capacity of strategy. First of all we use the industry data to analysis the manufacturing cost, demand and the historical situation of the revenue and we also discuss the influence about the uncertain demand and high volume cost to the industrial structure. Secondly, it put the individual manufacturer not consideri...

  20. Using federal technology policy to strength the US microelectronics industry

    Science.gov (United States)

    Gover, J. E.; Gwyn, C. W.

    1994-07-01

    A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan's government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for and often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.

  1. Using federal technology policy to strength the US microelectronics industry

    Energy Technology Data Exchange (ETDEWEB)

    Gover, J.E.; Gwyn, C.W.

    1994-07-01

    A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan`s government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for and often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.

  2. Entangled Coherent States Generation in two Superconducting LC Circuits

    International Nuclear Information System (INIS)

    Chen Meiyu; Zhang Weimin

    2008-01-01

    We proposed a novel pure electronic (solid state) device consisting of two superconducting LC circuits coupled to a superconducting flux qubit. The entangled coherent states of the two LC modes is generated through the measurement of the flux qubit states. The interaction of the flux qubit and two LC circuits is controlled by the external microwave control lines. The geometrical structure of the LC circuits is adjustable and makes a strong coupling between them achievable. This entangled coherent state generator can be realized by using the conventional microelectronic fabrication techniques which increases the feasibility of the experiment.

  3. SETA Support for the DARPA Microelectronics Technology Insertion Program of the Microelectronics Technology Office

    Science.gov (United States)

    1992-08-17

    Banerjee of UAH. The Harris study rated Pb2MoO5, GaP, and TeO2 highly. GE is concerned about the availability of Pb2MoO5 and is thus leaning toward using... TeO2 . The buy decision will be made after consideration of both of the aforementioned reports. For the integlatoi, GE is considering Rockwell’s...integrated circuit with polysilicate glass (PSG) optical waveguides, micromechanical membrane switches, and 11 bits of delay. TI’s demonstration array

  4. Back End of Line Nanorelays for Ultra-low Power Monolithic Integrated NEMS-CMOS Circuits

    KAUST Repository

    Lechuga Aranda, Jesus Javier

    2016-05-01

    Since the introduction of Complementary-Metal-Oxide-Semiconductor (CMOS) technology, the chip industry has enjoyed many benefits of transistor feature size scaling, including higher speed and device density and improved energy efficiency. However, in the recent years, the IC designers have encountered a few roadblocks, namely reaching the physical limits of scaling and also increased device leakage which has resulted in a slow-down of supply voltage and power density scaling. Therefore, there has been an extensive hunt for alternative circuit architectures and switching devices that can alleviate or eliminate the current crisis in the semiconductor industry. The Nano-Electro-Mechanical (NEM) relay is a promising alternative switch that offers zero leakage and abrupt turn-on behaviour. Even though these devices are intrinsically slower than CMOS transistors, new circuit design techniques tailored for the electromechanical properties of such devices can be leveraged to design medium performance, ultra-low power integrated circuits. In this thesis, we deal with a new generation of such devices that is built in the back end of line (BEOL) CMOS process and is an ideal option for full integration with current CMOS transistor technology. Simulation and verification at the circuit and system level is a critical step in the design flow of microelectronic circuits, and this is especially important for new technologies that lack the standard design infrastructure and well-known verification platforms. Although most of the physical and electrical properties of NEM structures can be simulated using standard electronic automation software, there is no report of a reliable behavioural model for NEMS switches that enable large circuit simulations. In this work, we present an optimised model of a BEOL nano relay that encompasses all the electromechanical characteristics of the device and is robust and lightweight enough for VLSI applications that require simulation of thousands of

  5. Hybdrid integral circuit for proportional chambers

    International Nuclear Information System (INIS)

    Yanik, R.; Khudy, M.; Povinets, P.; Strmen', P.; Grabachek, Z.; Feshchenko, A.A.

    1978-01-01

    Outlined briefly are a hybrid integrated circuit of the channel. One channel contains an input amplifier, delay circuit, and memory register on the base of the D-type flip-flop and controlled by the recording gate pulse. Provided at the output of the channel is a readout gating circuit. Presented are the flowsheet of the channel, the shaper amplifier and logical channel. At present the logical circuit was accepted for manufacture

  6. Micromachined sensor and actuator research at Sandia`s Microelectronics Development Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Smith, J.H.

    1996-11-01

    An overview of the surface micromachining program at the Microelectronics Development Laboratory of Sandia National Laboratories is presented. Development efforts are underway for a variety of surface micromachined sensors and actuators for both defense and commercial applications. A technology that embeds micromechanical devices below the surface of the wafer prior to microelectronics fabrication has been developed for integrating microelectronics with surface-micromachined micromechanical devices. The application of chemical-mechanical polishing to increase the manufacturability of micromechanical devices is also presented.

  7. Microelectronic Status Analysis and Secondary Part Procureability Assessment of the HAWK Weapon System

    National Research Council Canada - National Science Library

    Maddux, Gary

    2000-01-01

    The MT Division, Engineering Directorate (ED), RDEC, AMCOM has the mission and function of providing microelectronic technology assessments, and producibility and supportability analyses for the HAWK weapon system...

  8. Microelectronic Status Analysis and Secondary Part Procureability Assessment of the HAWK Weapon System

    National Research Council Canada - National Science Library

    Maddux, Gary

    1999-01-01

    The Industrial Operations Division (IOD), SEPD, RDEC, AMCOM has the mission and function of providing microelectronic technology assessments, and producibility and supportability analyses for the HAWK weapon system...

  9. An Approach for Impression Creep of Lead Free Microelectronic Solders

    Science.gov (United States)

    Anastasio, Onofrio A.

    2002-06-01

    Currently, the microelectronics industry is transitioning from lead-containing to lead-free solders in response to legislation in the EU and Japan. Before an alternative alloy can be designated as a replacement for current Pb-Sn extensive testing must be accomplished. One major characteristic of the alloy that must be considered is creep. Traditionally, creep testing requires numerous samples and a long tin, which thwarts the generation of comprehensive creep databases for difficult to prepare samples such as microelectronic solder joints. However, a relatively new technique, impression creep enables us to rapidly generate creep data. This test uses a cylindrical punch with a flat end to make an impression on the surface of a specimen under constant load. The steady state velocity of the indenter is found to have the same stress and temperature dependence as the conventional unidirectional creep test using bulk specimens. This thesis examines impression creep tests of eutectic Sn-Ag. A testing program and apparatus was developed constructed based on a servo hydraulic test frame. The apparatus is capable of a load resolution of 0.01N with a stability of plus/minus 0.1N, and a displacement resolution of 0.05 microns with a stability of plus/minus 0.1 microns. Samples of eutectic Sn-Ag solder were reflowed to develop the microstructure used in microelectronic packaging. Creep tests were conducted at various stresses and temperatures and showed that coarse microstructures creep more rapidly than the microstructures in the tested regime.

  10. Thermoelectric cooling of microelectronic circuits and waste heat electrical power generation in a desktop personal computer

    International Nuclear Information System (INIS)

    Gould, C.A.; Shammas, N.Y.A.; Grainger, S.; Taylor, I.

    2011-01-01

    Thermoelectric cooling and micro-power generation from waste heat within a standard desktop computer has been demonstrated. A thermoelectric test system has been designed and constructed, with typical test results presented for thermoelectric cooling and micro-power generation when the computer is executing a number of different applications. A thermoelectric module, operating as a heat pump, can lower the operating temperature of the computer's microprocessor and graphics processor to temperatures below ambient conditions. A small amount of electrical power, typically in the micro-watt or milli-watt range, can be generated by a thermoelectric module attached to the outside of the computer's standard heat sink assembly, when a secondary heat sink is attached to the other side of the thermoelectric module. Maximum electrical power can be generated by the thermoelectric module when a water cooled heat sink is used as the secondary heat sink, as this produces the greatest temperature difference between both sides of the module.

  11. Using SDI-12 with ST microelectronics MCU's

    Energy Technology Data Exchange (ETDEWEB)

    Saari, Alexandra [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Hinzey, Shawn Adrian [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Frigo, Janette Rose [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Proicou, Michael Chris [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Borges, Louis [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-09-03

    ST Microelectronics microcontrollers and processors are readily available, capable and economical processors. Unfortunately they lack a broad user base like similar offerings from Texas Instrument, Atmel, or Microchip. All of these devices could be useful in economical devices for remote sensing applications used with environmental sensing. With the increased need for environmental studies, and limited budgets, flexibility in hardware is very important. To that end, and in an effort to increase open support of ST devices, I am sharing my teams' experience in interfacing a common environmental sensor communication protocol (SDI-12) with ST devices.

  12. Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics

    Science.gov (United States)

    Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A.

    2018-03-01

    Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

  13. Low level radiation testing of micro-electronic components. Pt. 1

    International Nuclear Information System (INIS)

    Farren, J.; Stephen, J.H.; Mapper, D.; Sanderson, T.K.; Hardman, M.

    1984-05-01

    A review of the existing literature has been carried out, dealing with the current technology relating to low level radiation testing of microelectronic devices, as used in space satellite systems. After consideration of the space radiation environment, the general effects of cosmic radiation on MOSFET structures and other MOS devices have been assessed. The important aspect of annealing phenomena in relation to gamma-ray induced damage has also been reviewed in detail. The experimental and theoretical aspects of radiation testing have been assessed, with particular reference to the Harwell LORAD low level irradiation test facility. In addition, a review of modern dosimetry methods has been carried out, with specific regard to the problems of accurately measuring low radiation fields (1 to 10 R/hour) over periods of many months. Finally, a detailed account of the proposed experimental programme to be carried out in the LORAD facility is presented, and aspects of the experimental set-up discussed. The particular types of test circuits to be studied are dealt with, and full consideration is given to the various CMOS memory devices of special interest in the ESA space satellite programme. (author)

  14. Advanced Microelectronics Technologies for Future Small Satellite Systems

    Science.gov (United States)

    Alkalai, Leon

    1999-01-01

    Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

  15. Analysis of Hybrid-Integrated High-Speed Electro-Absorption Modulated Lasers Based on EM/Circuit Co-simulation

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor; Kazmierski, C.

    2009-01-01

    An improved electromagnetic simulation (EM) based approach has been developed for optimization of the electrical to optical (E/O) transmission properties of integrated electro-absorption modulated lasers (EMLs) aiming at 100 Gbit/s Ethernet applications. Our approach allows for an accurate analysis...... of the EML performance in a hybrid microstrip assembly. The established EM-based approach provides a design methodology for the future hybrid integration of the EML with its driving electronics....

  16. Resonance circuits for adiabatic circuits

    Directory of Open Access Journals (Sweden)

    C. Schlachta

    2003-01-01

    Full Text Available One of the possible techniques to reduces the power consumption in digital CMOS circuits is to slow down the charge transport. This slowdown can be achieved by introducing an inductor in the charging path. Additionally, the inductor can act as an energy storage element, conserving the energy that is normally dissipated during discharging. Together with the parasitic capacitances from the circuit a LCresonant circuit is formed.

  17. Building a Library for Microelectronics Verification with Topological Constraints

    Science.gov (United States)

    2017-03-01

    with topological constraints. Circuits at the second level of abstraction are selected from prior work on simulated reverse- engineered hardware...entering DoD systems. The Defense Advanced Research Project Agency (DARPA) Trusted Integrated Circuits (TRUST) [12-14] program was introduced to focus on...serious- risks-from-counterfeit-electronic-parts/ 4. “Trusted Integrated Circuits (TRUST)”. [Online]. DARPA Microsystems Technology Office. Available

  18. ICMCS-2014: 8. international conference on microelectronics and computer science and 5. conference of physicists of Moldova. Proceedings

    International Nuclear Information System (INIS)

    Canter, V.; Balmus, I.

    2014-10-01

    This book includes communications presented at the 8th International conference on microelectronics and computer science. The papers presented in the book cover certain issues of microelectronics, modern theoretical and experimental physics and advanced technology.

  19. Electronic circuit encyclopedia 2

    International Nuclear Information System (INIS)

    Park, Sun Ho

    1992-10-01

    This book is composed of 15 chapters, which are amplification of weak signal and measurement circuit audio control and power amplification circuit, data transmission and wireless system, forwarding and isolation, signal converting circuit, counter and comparator, discriminator circuit, oscillation circuit and synthesizer, digital and circuit on computer image processing circuit, sensor drive circuit temperature sensor circuit, magnetic control and application circuit, motor driver circuit, measuring instrument and check tool and power control and stability circuit.

  20. Electronic circuit encyclopedia 2

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sun Ho

    1992-10-15

    This book is composed of 15 chapters, which are amplification of weak signal and measurement circuit audio control and power amplification circuit, data transmission and wireless system, forwarding and isolation, signal converting circuit, counter and comparator, discriminator circuit, oscillation circuit and synthesizer, digital and circuit on computer image processing circuit, sensor drive circuit temperature sensor circuit, magnetic control and application circuit, motor driver circuit, measuring instrument and check tool and power control and stability circuit.

  1. Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

    International Nuclear Information System (INIS)

    Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

    2010-01-01

    This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100 deg. C, 1300 deg. C and 1500 deg. C for about 20 hours using heating and cooling rates of 2 deg. C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

  2. Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

    Science.gov (United States)

    Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

    2010-03-01

    This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

  3. Applications of synchrotron X-rays in microelectronics industry research

    International Nuclear Information System (INIS)

    Jordan-Sweet, Jean L.; Detavernier, Christophe; Lavoie, Christian; Mooney, Patricia M.; Toney, Michael F.

    2005-01-01

    The high flux and density of X-rays produced at synchrotrons provide the microelectronics industry with a powerful probe of the structure and behavior of a wide array of solid materials that are being developed for use in devices of the future. They also are of great use in determining why currently-used materials and processes sometimes fail. This paper describes the X20 X-ray beamline facility operated by IBM at the National Synchrotron Light Source, and presents a series of three industry challenges and results that illustrate the variety of techniques used and problems addressed. The value of this research ranges from solving short-term, technically specific problems to increasing our academic understanding of materials in general. Techniques discussed include high-resolution diffraction, time-resolved diffraction, texture measurements, and grazing-incidence diffraction

  4. Soft-Matter Printed Circuit Board with UV Laser Micropatterning.

    Science.gov (United States)

    Lu, Tong; Markvicka, Eric J; Jin, Yichu; Majidi, Carmel

    2017-07-05

    When encapsulated in elastomer, micropatterned traces of Ga-based liquid metal (LM) can function as elastically deformable circuit wiring that provides mechanically robust electrical connectivity between solid-state elements (e.g., transistors, processors, and sensor nodes). However, LM-microelectronics integration is currently limited by challenges in rapid fabrication of LM circuits and the creation of vias between circuit terminals and the I/O pins of packaged electronics. In this study, we address both with a unique layup for soft-matter electronics in which traces of liquid-phase Ga-In eutectic (EGaIn) are patterned with UV laser micromachining (UVLM). The terminals of the elastomer-sealed LM circuit connect to the surface mounted chips through vertically aligned columns of EGaIn-coated Ag-Fe 2 O 3 microparticles that are embedded within an interfacial elastomer layer. The processing technique is compatible with conventional UVLM printed circuit board (PCB) prototyping and exploits the photophysical ablation of EGaIn on an elastomer substrate. Potential applications to wearable computing and biosensing are demonstrated with functional implementations in which soft-matter PCBs are populated with surface-mounted microelectronics.

  5. Materials science in microelectronics II the effects of structure on properties in thin films

    CERN Document Server

    Machlin, Eugene

    2005-01-01

    The subject matter of thin-films - which play a key role in microelectronics - divides naturally into two headings: the processing / structure relationship, and the structure / properties relationship. Part II of 'Materials Science in Microelectronics' focuses on the latter of these relationships, examining the effect of structure on the following: Electrical properties Magnetic properties Optical properties Mechanical properties Mass transport properties Interface and junction properties Defects and properties Captures the importance of thin films to microelectronic development Examines the cause / effect relationship of structure on thin film properties.

  6. Hybridization of biomedical circuitry

    Science.gov (United States)

    Rinard, G. A.

    1978-01-01

    The design and fabrication of low power hybrid circuits to perform vital signs monitoring are reported. The circuits consist of: (1) clock; (2) ECG amplifier and cardiotachometer signal conditioner; (3) impedance pneumobraph and respiration rate processor; (4) hear/breath rate processor; (5) temperature monitor; and (6) LCD display.

  7. A Flexible Power Control Method of VSC-HVDC Link for the Enhancement of Effective Short-Circuit Ratio in a Hybrid Multi-Infeed HVDC System

    DEFF Research Database (Denmark)

    Liu, Yan; Chen, Zhe

    2013-01-01

    . To evaluate the contribution of the VSC-HVDC link on the voltage stability of HMIDC system, this paper proposes an effective short circuit ratio (ESCR) calculation method. Through the calculation, the voltage support capability of the VSC-HVDC link can be quantitatively represented by the ESCR. Furthermore......, based on the calculation results, a flexible power control strategy for the VSC-HVDC link is developed to provide maximum reactive power support under grid faults. The theoretical analysis of the HMIDC system is based on the Danish transmission grid, evaluated through PSCAD simulations under different...

  8. Thermo-mechanical properties and integrity of metallic interconnects in microelectronics

    Science.gov (United States)

    Ege, Efe Sinan

    In this dissertation, combined numerical (Finite Element Method) and experimental efforts were undertaken to study thermo-mechanical behavior in microelectronic devices. Interconnects, including chip-level metallization and package-level solder joints, are used to join many of the circuit parts in modern equipment. The dissertation is structured into six independent studies after the introductory chapter. The first two studies focus on thermo-mechanical fatigue of solder joints. Thermo-mechanical fatigue, in the form of damage along a microstructurally coarsened region in tin-lead solder, is analyzed along with the effects of intermetallic morphology. Also, lap-shear testing is modeled to characterize the joint and to investigate the validity of experimental data from different solder and substrate geometries. In the third study, the effects of pre-machined holes on strain localization and overall ductility in bulk eutectic tin-lead alloy is examined. Finite element analyses, taking into account the viscoplastic response, were carried out to provide a mechanistic rationale to corroborate the experimental findings. The fourth study concerns chip-level copper interconnects. Various combinations of oxide and polymer-based low-k dielectric schemes, with and without the thin barrier layers surrounding the Cu line, are considered. Attention is devoted to the thermal stress and strain fields and their dependency on material properties, geometry, and modeling details. This study is followed by a chapter on atomistics of interface-mediated plasticity in thin metallic films. The objective is to gain fundamental insight into the underlying mechanisms affecting the mechanical response of nanoscale thin films. The final study investigates the effect of microstructural heterogeneity on indentation response, for the purpose of raising awareness of the uncertainties involved in applying indentation techniques in probing mechanical properties of miniaturized devices.

  9. Use of COTS [commercial-off-the-shelf] Microelectronics in Radiation Environments

    Energy Technology Data Exchange (ETDEWEB)

    Winokur, P.S.; Lum, G.K.; Shaneyfelt, M.R.; Sexton, F.W.; Hash, G.L.; Scott, L.

    1999-07-07

    This paper addresses key issues for the cost-effective use of COTS microelectronics in radiation environments that enable circuit or system designers to manage risks and ensure mission success. COTS parts with low radiation tolerance should not be used when they degrade mission critical functions or lead to premature system failure. We review several factors and tradeoffs affecting the successful application of COTS parts including (1) hardness assurance and qualification issues, (2) system hardening techniques, and (3) life-cycle costs. The paper also describes several experimental studies that address trends in total-dose, transient, and single-event radiation hardness as COTS technology scales to smaller feature sizes. As an example, the level at which dose-rate upset occurs in Samsung SRAMS increases from 1.4x10{sup 8} rads(Si)/s for a 256K SRAM to 7.7x10{sup 9} rads(Si)/s for a 4M SRAM, indicating unintentional hardening improvements in the design or process of a commercial technology. Additional experiments were performed to quantify variations in radiation hardness for COTS parts. In one study, only small (10-15%) variations were found in the dose-rate upset and latchup thresholds for Samsung 4M SRAMS from three different date codes. In another study, irradiations of 4M SRAMS from Samsung, Hitachi, and Toshiba indicate large differences in total-dose radiation hardness. The paper attempts to carefully define terms and clear up misunderstandings about the definitions of ''COTS'' and ''radiation-hardened'' technology.

  10. Use of COTS [commercial-off-the-shelf] Microelectronics in Radiation Environments

    International Nuclear Information System (INIS)

    Winokur, P.S.; Lum, G.K.; Shaneyfelt, M.R.; Sexton, F.W.; Hash, G.L.; Scott, L.

    1999-01-01

    This paper addresses key issues for the cost-effective use of COTS microelectronics in radiation environments that enable circuit or system designers to manage risks and ensure mission success. COTS parts with low radiation tolerance should not be used when they degrade mission critical functions or lead to premature system failure. We review several factors and tradeoffs affecting the successful application of COTS parts including (1) hardness assurance and qualification issues, (2) system hardening techniques, and (3) life-cycle costs. The paper also describes several experimental studies that address trends in total-dose, transient, and single-event radiation hardness as COTS technology scales to smaller feature sizes. As an example, the level at which dose-rate upset occurs in Samsung SRAMS increases from 1.4x10 8 rads(Si)/s for a 256K SRAM to 7.7x10 9 rads(Si)/s for a 4M SRAM, indicating unintentional hardening improvements in the design or process of a commercial technology. Additional experiments were performed to quantify variations in radiation hardness for COTS parts. In one study, only small (10-15%) variations were found in the dose-rate upset and latchup thresholds for Samsung 4M SRAMS from three different date codes. In another study, irradiations of 4M SRAMS from Samsung, Hitachi, and Toshiba indicate large differences in total-dose radiation hardness. The paper attempts to carefully define terms and clear up misunderstandings about the definitions of ''COTS'' and ''radiation-hardened'' technology

  11. Microelectronic Status Analysis and Secondary Part Procureability Assessment of the ATACMS-BAT Weapon System

    National Research Council Canada - National Science Library

    Maddux, Gary

    2000-01-01

    The MT Division, Engineering Directorate (ED), RDEC, AMCOM has the mission and function of providing microelectronic technology assessments, and producibility and supportability analyses for the ATACMS-BAT weapon system...

  12. 3D-Printed Disposable Wireless Sensors with Integrated Microelectronics for Large Area Environmental Monitoring

    KAUST Repository

    Farooqui, Muhammad Fahad; Karimi, Muhammad Akram; Salama, Khaled N.; Shamim, Atif

    2017-01-01

    disposable, compact, dispersible 3D-printed wireless sensor nodes with integrated microelectronics which can be dispersed in the environment and work in conjunction with few fixed nodes for large area monitoring applications. As a proof of concept

  13. Flexible and tunable silicon photonic circuits on plastic substrates

    Science.gov (United States)

    Chen, Yu; Li, Huan; Li, Mo

    2012-09-01

    Flexible microelectronics has shown tremendous promise in a broad spectrum of applications, especially those that cannot be addressed by conventional microelectronics in rigid materials and constructions. These unconventional yet important applications range from flexible consumer electronics to conformal sensor arrays and biomedical devices. A recent paradigm shift in implementing flexible electronics is to physically transfer highly integrated devices made in high-quality, crystalline semiconductors on to plastic substrates. Here we demonstrate a flexible form of silicon photonics using the transfer-and-bond fabrication method. Photonic circuits including interferometers and resonators have been transferred onto flexible plastic substrates with preserved functionalities and performance. By mechanically deforming, the optical characteristics of the devices can be tuned reversibly over a remarkably large range. The demonstration of the new flexible photonic systems based on the silicon-on-plastic (SOP) platform could open the door to many future applications, including tunable photonics, optomechanical sensors and biomechanical and bio-photonic probes.

  14. Piezoelectric-nanowire-enabled power source for driving wireless microelectronics.

    Science.gov (United States)

    Xu, Sheng; Hansen, Benjamin J; Wang, Zhong Lin

    2010-10-19

    Harvesting energy from irregular/random mechanical actions in variable and uncontrollable environments is an effective approach for powering wireless mobile electronics to meet a wide range of applications in our daily life. Piezoelectric nanowires are robust and can be stimulated by tiny physical motions/disturbances over a range of frequencies. Here, we demonstrate the first chemical epitaxial growth of PbZr(x)Ti(1-x)O(3) (PZT) nanowire arrays at 230 °C and their application as high-output energy converters. The nanogenerators fabricated using a single array of PZT nanowires produce a peak output voltage of ~0.7 V, current density of 4 μA cm(-2) and an average power density of 2.8 mW cm(-3). The alternating current output of the nanogenerator is rectified, and the harvested energy is stored and later used to light up a commercial laser diode. This work demonstrates the feasibility of using nanogenerators for powering mobile and even personal microelectronics.

  15. Japanese technology assessment: Computer science, opto- and microelectronics mechatronics, biotechnology

    Energy Technology Data Exchange (ETDEWEB)

    Brandin, D.; Wieder, H.; Spicer, W.; Nevins, J.; Oxender, D.

    1986-01-01

    The series studies Japanese research and development in four high-technology areas - computer science, opto and microelectronics, mechatronics (a term created by the Japanese to describe the union of mechanical and electronic engineering to produce the next generation of machines, robots, and the like), and biotechnology. The evaluations were conducted by panels of U.S. scientists - chosen from academia, government, and industry - actively involved in research in areas of expertise. The studies were prepared for the purpose of aiding the U.S. response to Japan's technological challenge. The main focus of the assessments is on the current status and long-term direction and emphasis of Japanese research and development. Other aspects covered include evolution of the state of the art; identification of Japanese researchers, R and D organizations, and resources; and comparative U.S. efforts. The general time frame of the studies corresponds to future industrial applications and potential commercial impacts spanning approximately the next two decades.

  16. Wireless link and microelectronics design for retinal prostheses

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wentai [Univ. of California, Santa Cruz, CA (United States)

    2012-02-29

    This project focuses on delivering power and data to the artificial retinal implant inside the eye and the implant microstimulator electronics which delivers the current pulses to stimulate the retinal layer to elicit visual perception. Since the use of invasive means such as tethering wires to transmit power and data results in discomfort to the patients which could eventually cause infection due to the abrasion caused by the wire and contact of the internals of the eye to the external environment, a completely wireless approach is used to transfer both power and data. Power is required inside the eye for the microelectronic implant which uses a dual voltage supply scheme (positive and negative) to deliver biphasic (anodic and cathodic) current pulses. Data in the form of digital bits from the data transmitter external to the eye, carries information about the amplitude, phase width, interphase delay, stimulation sequence for each implant electrode. The data receiver unit decodes the digital stream and the microstimulator unit generates the appropriate current stimuli. Since the external unit consisting of the power transmitter can experience coupling a variation with the power receiver due to the patient’s movements, a closed loop approach is used which varies the transmitted power dynamically to automatically compensate for such movements. This report presents the salient features of this research activities and results.

  17. Controllable circuit

    DEFF Research Database (Denmark)

    2010-01-01

    A switch-mode power circuit comprises a controllable element and a control unit. The controllable element is configured to control a current in response to a control signal supplied to the controllable element. The control unit is connected to the controllable element and provides the control...

  18. Circuit Training.

    Science.gov (United States)

    Nelson, Jane B.

    1998-01-01

    Describes a research-based activity for high school physics students in which they build an LC circuit and find its resonant frequency of oscillation using an oscilloscope. Includes a diagram of the apparatus and an explanation of the procedures. (DDR)

  19. HYBRID VEHICLE CONTROL SYSTEM

    Directory of Open Access Journals (Sweden)

    V. Dvadnenko

    2016-06-01

    Full Text Available The hybrid vehicle control system includes a start–stop system for an internal combustion engine. The system works in a hybrid mode and normal vehicle operation. To simplify the start–stop system, there were user new possibilities of a hybrid car, which appeared after the conversion. Results of the circuit design of the proposed system of basic blocks are analyzed.

  20. High density microelectronics package using low temperature cofirable ceramics

    International Nuclear Information System (INIS)

    Fu, S.-L.; Hsi, C.-S.; Chen, L.-S.; Lin, W. K.

    1997-01-01

    Low Temperature Cofired Ceramics (LTCC) is a relative new thick film process and has many engineering and manufacturing advantages over both the sequential thick film process and high temperature cofired ceramic modules. Because of low firing temperature, low sheet resistance metal conductors, commercial thick film resistors, and thick film capacitors can be buried in or printed on the substrates. A 3-D multilayer ceramic substrate can be prepared via laminating and co-firing process. The packing density of the LTCC substrates can be increased by this 3-D packing technology. At Kaohsiung Polytechnic Institute (KPI), a LTCC substrate system has been developed for high density packaging applications, which had buried surface capacitors and resistors. The developed cordierite-glass ceramic substrate, which has similar thermal expansion as silicon chip, is a promising material for microelectronic packaging. When the substrates were sintered at temperatures between 850-900 degree centigrade, a relative density higher than 96 % can be obtained. The substrate had a dielectric constant between 5.5 and 6.5. Ruthenium-based resistor pastes were used for resistors purposes. The resistors fabricated in/on the LTCC substrates were strongly depended on the microstructures developed in the resistor films. Surface resistors were laser trimmed in order to obtain specific values for the resistors. Material with composition Pb(Fe 2/3 W 1/3 ) x (Fe l/2 Nb l/2 ) y Ti 2 O 3 was used as dielectric material of the capacitor in the substrate. The material can be sintered at temperatures between 850-930 degree centigrade, and has dielectric constant as high as 26000. After cofiring, good adhesion between dielectric and substrate layers was obtained. Combing the buried resistors and capacitors together with the lamination of LTCC layer, a 3-dimensional multilayered ceramic package was fabricated. (author)

  1. High density microelectronics package using low temperature cofirable ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Fu, S -L; Hsi, C -S; Chen, L -S; Lin, W K [Kaoshiung Polytechnic Institute Ta-Hsu, Kaoshiung (China)

    1998-12-31

    Low Temperature Cofired Ceramics (LTCC) is a relative new thick film process and has many engineering and manufacturing advantages over both the sequential thick film process and high temperature cofired ceramic modules. Because of low firing temperature, low sheet resistance metal conductors, commercial thick film resistors, and thick film capacitors can be buried in or printed on the substrates. A 3-D multilayer ceramic substrate can be prepared via laminating and co-firing process. The packing density of the LTCC substrates can be increased by this 3-D packing technology. At Kaohsiung Polytechnic Institute (KPI), a LTCC substrate system has been developed for high density packaging applications, which had buried surface capacitors and resistors. The developed cordierite-glass ceramic substrate, which has similar thermal expansion as silicon chip, is a promising material for microelectronic packaging. When the substrates were sintered at temperatures between 850-900 degree centigrade, a relative density higher than 96 % can be obtained. The substrate had a dielectric constant between 5.5 and 6.5. Ruthenium-based resistor pastes were used for resistors purposes. The resistors fabricated in/on the LTCC substrates were strongly depended on the microstructures developed in the resistor films. Surface resistors were laser trimmed in order to obtain specific values for the resistors. Material with composition Pb(Fe{sub 2/3}W{sub 1/3}){sub x}(Fe{sub l/2}Nb{sub l/2}){sub y}Ti{sub 2}O{sub 3} was used as dielectric material of the capacitor in the substrate. The material can be sintered at temperatures between 850-930 degree centigrade, and has dielectric constant as high as 26000. After cofiring, good adhesion between dielectric and substrate layers was obtained. Combing the buried resistors and capacitors together with the lamination of LTCC layer, a 3-dimensional multilayered ceramic package was fabricated. (author)

  2. Experiences with integral microelectronics on smart structures for space

    Science.gov (United States)

    Nye, Ted; Casteel, Scott; Navarro, Sergio A.; Kraml, Bob

    1995-05-01

    One feature of a smart structure implies that some computational and signal processing capability can be performed at a local level, perhaps integral to the controlled structure. This requires electronics with a minimal mechanical influence regarding structural stiffening, heat dissipation, weight, and electrical interface connectivity. The Advanced Controls Technology Experiment II (ACTEX II) space-flight experiments implemented such a local control electronics scheme by utilizing composite smart members with integral processing electronics. These microelectronics, tested to MIL-STD-883B levels, were fabricated with conventional thick film on ceramic multichip module techniques. Kovar housings and aluminum-kapton multilayer insulation was used to protect against harsh space radiation and thermal environments. Development and acceptance testing showed the electronics design was extremely robust, operating in vacuum and at temperature range with minimal gain variations occurring just above room temperatures. Four electronics modules, used for the flight hardware configuration, were connected by a RS-485 2 Mbit per second serial data bus. The data bus was controlled by Actel field programmable gate arrays arranged in a single master, four slave configuration. An Intel 80C196KD microprocessor was chosen as the digital compensator in each controller. It was used to apply a series of selectable biquad filters, implemented via Delta Transforms. Instability in any compensator was expected to appear as large amplitude oscillations in the deployed structure. Thus, over-vibration detection circuitry with automatic output isolation was incorporated into the design. This was not used however, since during experiment integration and test, intentionally induced compensator instabilities resulted in benign mechanical oscillation symptoms. Not too surprisingly, it was determined that instabilities were most detectable by large temperature increases in the electronics, typically

  3. Plan for advanced microelectronics processing technology application. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Goland, A.N.

    1990-10-01

    The ultimate objective of the tasks described in the research agreement was to identify resources primarily, but not exclusively, within New York State that are available for the development of a Center for Advanced Microelectronics Processing (CAMP). Identification of those resources would enable Brookhaven National Laboratory to prepare a program plan for the CAMP. In order to achieve the stated goal, the principal investigators undertook to meet the key personnel in relevant NYS industrial and academic organizations to discuss the potential for economic development that could accompany such a Center and to gauge the extent of participation that could be expected from each interested party. Integrated of these discussions was to be achieved through a workshop convened in the summer of 1990. The culmination of this workshop was to be a report (the final report) outlining a plan for implementing a Center in the state. As events unfolded, it became possible to identify the elements of a major center for x-ray lithography on Lone Island at Brookhaven National Laboratory. The principal investigators were than advised to substitute a working document based upon that concept in place of a report based upon the more general CAMP workshop originally envisioned. Following that suggestion from the New York State Science and Technology Foundation, the principals established a working group consisting of representatives of the Grumman Corporation, Columbia University, the State University of New York at Stony Brook, and Brookhaven National Laboratory. Regular meetings and additional communications between these collaborators have produced a preproposal that constitutes the main body of the final report required by the contract. Other components of this final report include the interim report and a brief description of the activities which followed the establishment of the X-ray Lithography Center working group.

  4. Carbon nanotubes for thermal interface materials in microelectronic packaging

    Science.gov (United States)

    Lin, Wei

    As the integration scale of transistors/devices in a chip/system keeps increasing, effective cooling has become more and more important in microelectronics. To address the thermal dissipation issue, one important solution is to develop thermal interface materials with higher performance. Carbon nanotubes, given their high intrinsic thermal and mechanical properties, and their high thermal and chemical stabilities, have received extensive attention from both academia and industry as a candidate for high-performance thermal interface materials. The thesis is devoted to addressing some challenges related to the potential application of carbon nanotubes as thermal interface materials in microelectronics. These challenges include: 1) controlled synthesis of vertically aligned carbon nanotubes on various bulk substrates via chemical vapor deposition and the fundamental understanding involved; 2) development of a scalable annealing process to improve the intrinsic properties of synthesized carbon nanotubes; 3) development of a state-of-art assembling process to effectively implement high-quality vertically aligned carbon nanotubes into a flip-chip assembly; 4) a reliable thermal measurement of intrinsic thermal transport property of vertically aligned carbon nanotube films; 5) improvement of interfacial thermal transport between carbon nanotubes and other materials. The major achievements are summarized. 1. Based on the fundamental understanding of catalytic chemical vapor deposition processes and the growth mechanism of carbon nanotube, fast synthesis of high-quality vertically aligned carbon nanotubes on various bulk substrates (e.g., copper, quartz, silicon, aluminum oxide, etc.) has been successfully achieved. The synthesis of vertically aligned carbon nanotubes on the bulk copper substrate by the thermal chemical vapor deposition process has set a world record. In order to functionalize the synthesized carbon nanotubes while maintaining their good vertical alignment

  5. Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea

    Science.gov (United States)

    Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

    2015-01-01

    Objectives Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Methods Based on claim data from the National Health Insurance (2008–2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Results Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Conclusions Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results. PMID:25938673

  6. Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea.

    Directory of Open Access Journals (Sweden)

    Inah Kim

    Full Text Available Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990 s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea.Based on claim data from the National Health Insurance (2008-2012, we estimated age-specific rates of spontaneous abortion (SAB and menstrual aberration (MA among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs were estimated.Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties.Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results.

  7. Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea.

    Science.gov (United States)

    Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

    2015-01-01

    Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990 s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Based on claim data from the National Health Insurance (2008-2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results.

  8. Realizing a supercapacitor in an electrical circuit

    International Nuclear Information System (INIS)

    Fukuhara, Mikio; Kuroda, Tomoyuki; Hasegawa, Fumihiko

    2014-01-01

    Capacitors are commonly used in electronic resonance circuits; however, capacitors have not been used for storing large amounts of electrical energy in electrical circuits. Here, we report a superior RC circuit which serves as an electrical storage system characterized by quick charging and long-term discharging of electricity. The improved energy storage characteristics in this mixed electric circuit (R 1  + R 2 C 1 ) with small resistor R 1 , large resistor R 2 , and large capacitor C 1 are derived from the damming effect by large R 2 in simple parallel R 2 C 1 circuit. However, no research work has been carried out previously on the use of capacitors as electrical energy storage devices in circuits. Combined with nanotechnology, we hope that our finding will play a remarkable role in a variety of applications such as hybrid electric vehicles and backup power supplies

  9. Creep of Two-Phase Microstructures for Microelectronic Applications

    Energy Technology Data Exchange (ETDEWEB)

    Reynolds, Heidi Linch [Univ. of California, Berkeley, CA (United States)

    1998-12-01

    The mechanical properties of low-melting temperature alloys are highly influenced by their creep behavior. This study investigates the dominant mechanisms that control creep behavior of two-phase, low-melting temperature alloys as a function of microstructure. The alloy systems selected for study were In-Ag and Sn-Bi because their eutectic compositions represent distinctly different microstructure.” The In-Ag eutectic contains a discontinuous phase while the Sn-Bi eutectic consists of two continuous phases. In addition, this work generates useful engineering data on Pb-free alloys with a joint specimen geometry that simulates microstructure found in microelectronic applications. The use of joint test specimens allows for observations regarding the practical attainability of superplastic microstructure in real solder joints by varying the cooling rate. Steady-state creep properties of In-Ag eutectic, Sn-Bi eutectic, Sn-xBi solid-solution and pure Bi joints have been measured using constant load tests at temperatures ranging from O°C to 90°C. Constitutive equations are derived to describe the steady-state creep behavior for In-Ageutectic solder joints and Sn-xBi solid-solution joints. The data are well represented by an equation of the form proposed by Dom: a power-law equation applies to each independent creep mechanism. Rate-controlling creep mechanisms, as a function of applied shear stress, test temperature, and joint microstructure, are discussed. Literature data on the steady-state creep properties of Sn-Bi eutectic are reviewed and compared with the Sn-xBi solid-solution and pure Bi joint data measured in the current study. The role of constituent phases in controlling eutectic creep behavior is discussed for both alloy systems. In general, for continuous, two-phase microstructure, where each phase exhibits significantly different creep behavior, the harder or more creep resistant phase will dominate the creep behavior in a lamellar microstructure. If a

  10. Process Variations and Probabilistic Integrated Circuit Design

    CERN Document Server

    Haase, Joachim

    2012-01-01

    Uncertainty in key parameters within a chip and between different chips in the deep sub micron era plays a more and more important role. As a result, manufacturing process spreads need to be considered during the design process.  Quantitative methodology is needed to ensure faultless functionality, despite existing process variations within given bounds, during product development.   This book presents the technological, physical, and mathematical fundamentals for a design paradigm shift, from a deterministic process to a probability-orientated design process for microelectronic circuits.  Readers will learn to evaluate the different sources of variations in the design flow in order to establish different design variants, while applying appropriate methods and tools to evaluate and optimize their design.  Trains IC designers to recognize problems caused by parameter variations during manufacturing and to choose the best methods available to mitigate these issues during the design process; Offers both qual...

  11. LOGIC CIRCUIT

    Science.gov (United States)

    Strong, G.H.; Faught, M.L.

    1963-12-24

    A device for safety rod counting in a nuclear reactor is described. A Wheatstone bridge circuit is adapted to prevent de-energizing the hopper coils of a ball backup system if safety rods, sufficient in total control effect, properly enter the reactor core to effect shut down. A plurality of resistances form one arm of the bridge, each resistance being associated with a particular safety rod and weighted in value according to the control effect of the particular safety rod. Switching means are used to switch each of the resistances in and out of the bridge circuit responsive to the presence of a particular safety rod in its effective position in the reactor core and responsive to the attainment of a predetermined velocity by a particular safety rod enroute to its effective position. The bridge is unbalanced in one direction during normal reactor operation prior to the generation of a scram signal and the switching means and resistances are adapted to unbalance the bridge in the opposite direction if the safety rods produce a predetermined amount of control effect in response to the scram signal. The bridge unbalance reversal is then utilized to prevent the actuation of the ball backup system, or, conversely, a failure of the safety rods to produce the predetermined effect produces no unbalance reversal and the ball backup system is actuated. (AEC)

  12. Magnetic circuit design of magnetically driving gliding arc discharge device

    International Nuclear Information System (INIS)

    Jiang Zhonghe; Liu Minghai; Gu Chenglin; Pan Yuan

    2002-01-01

    A gliding arc discharge driven by magnetic field at atmospheric pressure can generate non-equilibrium plasma with good confinement property, and has extensive application in the areas of microelectronic fabrication, environmental engineering, etc. The magnetic circuit of the generator is designed with the permeance method, and analytic expression is obtained on the magnetic induction, the permeant magnetic material thickness and length of air gap. The results have been compared with those of the finite element method, the difference is 3.1%. But the permeance method is more concise and convenient and more universal and economical. So the permeance method is a more credible and useful engineering arithmetic

  13. A compact atomic force-scanning tunneling microscope for studying microelectronics and environmental aerosols

    International Nuclear Information System (INIS)

    Chen, G.

    1996-06-01

    This dissertation describes the characteristics and the construction of a compact atomic force/scanning tunneling microscope (AFM/STM). The basics and the method of preparing a tunneling junction between a chemically etched tunneling tip and a micro-manufactured cantilever is outlined by analyzing the forces between tunneling tip and cantilever as well as between force-sensing tip and sample surfaces. To our best knowledge this instrument is the first one using a commercial cantilever with only one piezoelectric tube carrying the whole tunneling sensor. The feedback control system has been optimized after a careful analysis of the electronic loop characteristics. The mode of operation has been determined by analyzing the dynamic characteristics of the scan heads and by investigating the time characteristics of the data acquisition system. The vibration isolation system has been calibrated by analyzing the characteristics of the damping setup and the stiffness of the scan head. The calculated results agree well with the measured ones. Also, a software package for data acquisition and real time display as well as for image processing and three-dimensional visualization has been developed. With this home-made software package, the images can be processed by means of a convolution filter, a Wiener filter and other 2-D FFT filters, and can be displayed in different ways. Atomic resolution images of highly oriented pyrolytic graphite (HOPG) and graphite surfaces have been obtained in AFM and STM mode. New theoretical explanations have been given for the observed anomalous STM and AFM images of graphite by calculating the asymmetric distribution of quantum conductance and tip-surface forces on a graphite surface. This not only resolved the theoretical puzzles of STM and AFM of graphite, but also revealed the relation between atomic force microscopy and scanning tunneling microscopy of graphite. Applications of STM and AFM to micro-electronic devices have been investigated

  14. Short- circuit tests of circuit breakers

    OpenAIRE

    Chorovský, P.

    2015-01-01

    This paper deals with short-circuit tests of low voltage electrical devices. In the first part of this paper, there are described basic types of short- circuit tests and their principles. Direct and indirect (synthetic) tests with more details are described in the second part. Each test and principles are explained separately. Oscilogram is obtained from short-circuit tests of circuit breakers at laboratory. The aim of this research work is to propose a test circuit for performing indirect test.

  15. Interfacial Compatibility in Microelectronics Moving Away from the Trial and Error Approach

    CERN Document Server

    Laurila, Tomi; Paulasto-Kröckel, Mervi; Turunen, Markus; Mattila, Toni T; Kivilahti, Jorma

    2012-01-01

    Interfaces between dissimilar materials are met everywhere in microelectronics and microsystems. In order to ensure faultless operation of these highly sophisticated structures, it is mandatory to have fundamental understanding of materials and their interactions in the system. In this difficult task, the “traditional” method of trial and error is not feasible anymore; it takes too much time and repeated efforts. In Interfacial Compatibility in Microelectronics, an alternative approach is introduced. In this revised method four fundamental disciplines are combined: i) thermodynamics of materials ii) reaction kinetics iii) theory of microstructures and iv) stress and strain analysis. The advantages of the method are illustrated in Interfacial Compatibility in Microelectronics which includes: •solutions to several common reliability issues in microsystem technology, •methods to understand and predict failure mechanisms at interfaces between dissimilar materials and •an approach to DFR based on deep un...

  16. Adhesion-delamination phenomena at the surfaces and interfaces in microelectronics and MEMS structures and packaged devices

    International Nuclear Information System (INIS)

    Khanna, V K

    2011-01-01

    Physico-chemical mechanisms of adhesion and debonding at the various surfaces and interfaces of semiconductor devices, integrated circuits and microelectromechanical systems are systematically examined, starting from chip manufacturing and traversing the process stages to the ultimate finished product. Sources of intrinsic and thermal stresses in these devices are pointed out. Thin film ohmic contacts to the devices call for careful attention. The role of an adhesion layer in multilayer metallization schemes is highlighted. In packaged devices, sites facing potential risks of delamination are indicated. As MEMS devices incorporate moving parts, there are additional issues due to adhesion of suspended structures to surfaces in the vicinity, both during chip fabrication and their subsequent operation. Proper surface treatments for preventing adhesion together with design considerations for overcoming stiction pave the way to reliable functioning of these devices. Adhesion-delamination issues in microelectronics and MEMS continue to pose significant challenges to both design and process engineers. This paper is an attempt to survey the adhesion characteristics of materials, their compatibilities and limitations and look at future research trends. In addition, it addresses some of the techniques for improved or reduced adhesion, as demanded by the situation. The paper encompasses fundamental aspects to contemporary applications.

  17. Comparison of CREME (cosmic-ray effects on microelectronics) model LET (linear energy transfer) spaceflight dosimetry data

    Energy Technology Data Exchange (ETDEWEB)

    Letaw, J.R.; Adams, J.H.

    1986-07-15

    The galactic cosmic radiation (GCR) component of space radiation is the dominant cause of single-event phenomena in microelectronic circuits when Earth's magnetic shielding is low. Spaceflights outside the magnetosphere and in high inclination orbits are examples of such circumstances. In high-inclination orbits, low-energy (high LET) particles are transmitted through the field only at extreme latitudes, but can dominate the orbit-averaged dose. GCR is an important part of the radiation dose to astronauts under the same conditions. As a test of the CREME environmental model and particle transport codes used to estimate single event upsets, we have compiled existing measurements of HZE doses were compiled where GCR is expected to be important: Apollo 16 and 17, Skylab, Apollo Soyuz Test Project, and Kosmos 782. The LET spectra, due to direct ionization from GCR, for each of these missions has been estimated. The resulting comparisons with data validate the CREME model predictions of high-LET galactic cosmic-ray fluxes to within a factor of two. Some systematic differences between the model and data are identified.

  18. Overview and future prospects of the use of lasers for packaging by the microelectronics and photonics industry in Japan

    Science.gov (United States)

    Washio, Kunihiko; Kouta, Hikaru

    2002-06-01

    This paper presents an overview and future prospects of the use of lasers for packaging by the microelectronics and photonics industry in Japan. Various kinds of lasers and material processing technologies have been developed and applied for manufacturing electronic and photonic devices to meet the strong demands for high-performance, lightweight, low energy-consumption mobile digital consumer electronics, broadband optical fiber communications, low-emission and fuel-efficient, easy-to-steer smart cars, etc. This paper emphasizes solid-state lasers as convenient and versatile light sources for packaging advanced compact devices with sensitive passive or active components having small feature sizes. Some of the representative material processing applications using solid-state lasers for electronic and photonic devices are, opaque and clear defects repairing of LCDs, trimming of functional modules, fine-tuning of optical characteristics of photonic devices, forming of various micro-vias for high-density interconnection circuits, laser patterning of amorphous solar-cells, and high-precision laser welding of electronic components such as optical modules, miniature relays and lithium ion batteries. The recent progress in high-power ultra-short pulse solid-state lasers seems to be rapidly increasing their processing capabilities such as for fine adjustment of optical filters, etc.

  19. Collective of mechatronics circuit

    International Nuclear Information System (INIS)

    1987-02-01

    This book is composed of three parts, which deals with mechatronics system about sensor, circuit and motor. The contents of the first part are photo sensor of collector for output, locating detection circuit with photo interrupts, photo sensor circuit with CdS cell and lamp, interface circuit with logic and LED and temperature sensor circuit. The second part deals with oscillation circuit with crystal, C-R oscillation circuit, F-V converter, timer circuit, stability power circuit, DC amp and DC-DC converter. The last part is comprised of bridge server circuit, deformation bridge server, controlling circuit of DC motor, controlling circuit with IC for PLL and driver circuit of stepping motor and driver circuit of Brushless.

  20. Collective of mechatronics circuit

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1987-02-15

    This book is composed of three parts, which deals with mechatronics system about sensor, circuit and motor. The contents of the first part are photo sensor of collector for output, locating detection circuit with photo interrupts, photo sensor circuit with CdS cell and lamp, interface circuit with logic and LED and temperature sensor circuit. The second part deals with oscillation circuit with crystal, C-R oscillation circuit, F-V converter, timer circuit, stability power circuit, DC amp and DC-DC converter. The last part is comprised of bridge server circuit, deformation bridge server, controlling circuit of DC motor, controlling circuit with IC for PLL and driver circuit of stepping motor and driver circuit of Brushless.

  1. Materials science in microelectronics I the relationships between thin film processing and structure

    CERN Document Server

    Machlin, Eugene

    2005-01-01

    Thin films play a key role in the material science of microelectronics, and the subject matter of thin-films divides naturally into two headings: processing / structure relationship, and structure / properties relationship.The first volume of Materials Science in Microelectronics focuses on the first relationship - that between processing and the structure of the thin-film. The state of the thin film's surface during the period that one monolayer exists - before being buried in the next layer - determines the ultimate structure of the thin film, and thus its properties. This

  2. Circuit parties.

    Science.gov (United States)

    Guzman, R

    2000-03-01

    Circuit parties are extended celebrations, lasting from a day to a week, primarily attended by gay and bisexual men in their thirties and forties. These large-scale dance parties move from city to city and draw thousands of participants. The risks for contracting HIV during these parties include recreational drug use and unsafe sex. Limited data exists on the level of risk at these parties, and participants are skeptical of outside help because of past criticism of these events. Health care and HIV advocates can promote risk-reduction strategies with the cooperation of party planners and can counsel individuals to personally reduce their own risk. To convey the message, HIV prevention workers should emphasize positive and community-centered aspects of the parties, such as taking care of friends and avoiding overdose.

  3. Radiation-hardened micro-electronics for nuclear instrumentation

    International Nuclear Information System (INIS)

    Van Uffelen, M.

    2007-01-01

    The successful development and deployment of future fission and thermonuclear fusion reactors depends to a large extent on the advances of different enabling technologies. Not only the materials need to be custom engineered but also the instrumentation, the electronics and the communication equipment need to support operation in this harsh environment, with expected radiation levels during maintenance up to several MGy. Indeed, there are yet no commercially available electronic devices available off-the-shelf which demonstrated a satisfying operation at these extremely high radiation levels. The main goal of this task is to identify commercially available radiation tolerant technologies, and to design dedicated and integrated electronic circuits, using radiation hardening techniques, both at the topological and architectural level. Within a stepwise approach, we first design circuits with discrete components and look for an equivalent integrated technology. This will enable us to develop innovative instrumentation and communication tools for the next generation of nuclear reactors, where both radiation hardening and miniaturization play a dominant role

  4. Commutation circuit for an HVDC circuit breaker

    Science.gov (United States)

    Premerlani, William J.

    1981-01-01

    A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

  5. Design and realization of a fast low noise electronics for a hybrid pixel X-ray detector dedicated to small animal imaging

    International Nuclear Information System (INIS)

    Chantepie, B.

    2008-12-01

    Since the invention of computerized tomography (CT), charge integration detector were widely employed for X-ray biomedical imaging applications. Nevertheless, other options exist. A new technology of direct detection using semiconductors has been developed for high energy physics instrumentation. This new technology, called hybrid pixel detector, works in photon counting mode and allows for selecting the minimum energy of the counted photons. The ImXgam research team at CPPM develops the PIXSCAN demonstrator, a CT-scanner using the hybrid pixel detector XPAD. The aim of this project is to evaluate the improvement in image quality and in dose delivered during X-ray examinations of a small animal. After a first prototype of a hybrid pixel detector XPAD1 proving the feasibility of the project, a complete imager XPAD2 was designed and integrated in the PIXSCAN demonstrator. Since then, with the evolution of microelectronic industry, important improvements are conceivable. To reducing the size of pixels and to improving the energy resolution of detectors, a third design XPAD3 was conceived and will be soon integrated in a second generation of PIXSCAN demonstrator. In this project, my thesis work consisted in taking part to the design of the detector readout electronics, to the characterization of the chips and of the hybrid pixel detectors, and also to the definition of a auto-zeroing architecture for pixels. The first and second chapters present X-ray medical imaging and particle detection with semi-conductors and its modelling. The third chapter deals with the specifications of electronic circuits for imaging applications first for analog pixels then for digital pixels and describes the general architecture of the integrated circuits. The validation tests are presented in the fourth chapter while the last chapter gives an account of expected changes in pixel electronics

  6. Dictionary of microelectronics and microcomputer technology. Woerterbuch der Mikroelektronik und Mikrorechnertechnik

    Energy Technology Data Exchange (ETDEWEB)

    Attiyate, Y H; Shah, R R

    1984-01-01

    This bilingual dictionary (German-English and English-German) is to give the general public a clearer idea of the terminology of microelectronics, microcomputers, data processing, and computer science. Each part contains about 7500 terms frequently encountered in practice, about 2000 of which are supplemented by precise explanations.

  7. The microelectronics and photonics test bed (MPTB) space, ground test and modeling experiments

    International Nuclear Information System (INIS)

    Campbell, A.

    1999-01-01

    This paper is an overview of the MPTB (microelectronics and photonics test bed) experiment, a combination of a space experiment, ground test and modeling programs looking at the response of advanced electronic and photonic technologies to the natural radiation environment of space. (author)

  8. Numerical Analysis and Experimental Verification of Stresses Building up in Microelectronics Packaging

    NARCIS (Netherlands)

    Rezaie Adli, A.R.

    2017-01-01

    This thesis comprises a thorough study of the microelectronics packaging process by means of various experimental and numerical methods to estimate the process induced residual stresses. The main objective of the packaging is to encapsulate the die, interconnections and the other exposed internal

  9. Labour-Saving versus Work-Amplifying Effects of Micro-Electronics.

    Science.gov (United States)

    Watanabe, Susumu

    1986-01-01

    This article argues that the labor-displacement effect of microelectronic machinery, especially numerically controlled machine tools and robots, has been exaggerated and that people tend to confuse the impact of intensified international competition with that of the new technology. (Author/CT)

  10. Investigation of “benign” ionic content in epoxy that induces microelectronic device failure

    Science.gov (United States)

    Gregory T. Schueneman; Jeffery Kingsbury; Edmund Klinkerch

    2011-01-01

    Microelectronics and the devices dependent upon them have the extremely challenging requirements of becoming more capable and less expensive every year. This drives the industry to pack more functions into an ever smaller footprint until the next technological revolution. Adding to this situation is the removal of lead from the bill of materials followed closely by...

  11. Analog circuit design designing dynamic circuit response

    CERN Document Server

    Feucht, Dennis

    2010-01-01

    This second volume, Designing Dynamic Circuit Response builds upon the first volume Designing Amplifier Circuits by extending coverage to include reactances and their time- and frequency-related behavioral consequences.

  12. Trigger circuit

    International Nuclear Information System (INIS)

    Verity, P.R.; Chaplain, M.D.; Turner, G.D.J.

    1984-01-01

    A monostable trigger circuit comprises transistors TR2 and TR3 arranged with their collectors and bases interconnected. The collector of the transistor TR2 is connected to the base of transistor TR3 via a capacitor C2 the main current path of a grounded base transistor TR1 and resistive means R2,R3. The collector of transistor TR3 is connected to the base of transistor TR2 via resistive means R6, R7. In the stable state all the transistors are OFF, the capacitor C2 is charged, and the output is LOW. A positive pulse input to the base of TR2 switches it ON, which in turn lowers the voltage at points A and B and so switches TR1 ON so that C2 can discharge via R2, R3, which in turn switches TR3 ON making the output high. Thus all three transistors are latched ON. When C2 has discharged sufficiently TR1 switches OFF, followed by TR3 (making the output low again) and TR2. The components C1, C3 and R4 serve to reduce noise, and the diode D1 is optional. (author)

  13. Towards a modeling synthesis of two or three-dimensional circuits through substrate coupling and interconnections

    CERN Document Server

    Gontrand, Christian

    2014-01-01

    The number of transistors in integrated circuits doubles every two years, as stipulated by Moore's law, and this has been the driving force for the huge development of the microelectronics industry in the past 50 years - currently advanced to the nanometric scale.This e-book is dedicated to electronic noises and parasites, accounting for issues involving substrate coupling and interconnections, in the perspective of the 3D integration: a second track for enhancing integration, also compatible with Moore's law. This reference explains the modeling of 3D circuits without delving into the latest

  14. Modeling of low pressure plasma sources for microelectronics fabrication

    International Nuclear Information System (INIS)

    Agarwal, Ankur; Bera, Kallol; Kenney, Jason; Rauf, Shahid; Likhanskii, Alexandre

    2017-01-01

    Chemically reactive plasmas operating in the 1 mTorr–10 Torr pressure range are widely used for thin film processing in the semiconductor industry. Plasma modeling has come to play an important role in the design of these plasma processing systems. A number of 3-dimensional (3D) fluid and hybrid plasma modeling examples are used to illustrate the role of computational investigations in design of plasma processing hardware for applications such as ion implantation, deposition, and etching. A model for a rectangular inductively coupled plasma (ICP) source is described, which is employed as an ion source for ion implantation. It is shown that gas pressure strongly influences ion flux uniformity, which is determined by the balance between the location of plasma production and diffusion. The effect of chamber dimensions on plasma uniformity in a rectangular capacitively coupled plasma (CCP) is examined using an electromagnetic plasma model. Due to high pressure and small gap in this system, plasma uniformity is found to be primarily determined by the electric field profile in the sheath/pre-sheath region. A 3D model is utilized to investigate the confinement properties of a mesh in a cylindrical CCP. Results highlight the role of hole topology and size on the formation of localized hot-spots. A 3D electromagnetic plasma model for a cylindrical ICP is used to study inductive versus capacitive power coupling and how placement of ground return wires influences it. Finally, a 3D hybrid plasma model for an electron beam generated magnetized plasma is used to understand the role of reactor geometry on plasma uniformity in the presence of E  ×  B drift. (paper)

  15. Modeling of low pressure plasma sources for microelectronics fabrication

    Science.gov (United States)

    Agarwal, Ankur; Bera, Kallol; Kenney, Jason; Likhanskii, Alexandre; Rauf, Shahid

    2017-10-01

    Chemically reactive plasmas operating in the 1 mTorr-10 Torr pressure range are widely used for thin film processing in the semiconductor industry. Plasma modeling has come to play an important role in the design of these plasma processing systems. A number of 3-dimensional (3D) fluid and hybrid plasma modeling examples are used to illustrate the role of computational investigations in design of plasma processing hardware for applications such as ion implantation, deposition, and etching. A model for a rectangular inductively coupled plasma (ICP) source is described, which is employed as an ion source for ion implantation. It is shown that gas pressure strongly influences ion flux uniformity, which is determined by the balance between the location of plasma production and diffusion. The effect of chamber dimensions on plasma uniformity in a rectangular capacitively coupled plasma (CCP) is examined using an electromagnetic plasma model. Due to high pressure and small gap in this system, plasma uniformity is found to be primarily determined by the electric field profile in the sheath/pre-sheath region. A 3D model is utilized to investigate the confinement properties of a mesh in a cylindrical CCP. Results highlight the role of hole topology and size on the formation of localized hot-spots. A 3D electromagnetic plasma model for a cylindrical ICP is used to study inductive versus capacitive power coupling and how placement of ground return wires influences it. Finally, a 3D hybrid plasma model for an electron beam generated magnetized plasma is used to understand the role of reactor geometry on plasma uniformity in the presence of E  ×  B drift.

  16. Integrated circuit devices in control systems of coal mining complexes

    Energy Technology Data Exchange (ETDEWEB)

    1983-01-01

    Systems of automatic monitoring and control of coal mining complexes developed in the 1960's used electromagnetic relays, thyristors, and flip-flops on transistors of varying conductivity. The circuits' designers, devoted much attention to ensuring spark safety, lowering power consumption, and raising noise immunity and repairability of functional devices. The fast development of integrated circuitry led to the use of microelectronic components in most devices of mine automation. An analysis of specifications and experimental research into integrated circuits (IMS) shows that the series K 176 IMS components made by CMOS technology best meet mine conditions of operation. The use of IMS devices under mine conditions has demonstrated their high reliability. Further development of integrated circuitry involve using microprocessors and microcomputers. (SC)

  17. PRECISION MOTION SYSTEM FOR OPTO-MECHANICAL EQUIPMENT OF MICROELECTRONICS

    Directory of Open Access Journals (Sweden)

    I. V. Dainiak

    2015-01-01

    Full Text Available The paper proposes a structure of precision motion system built on the basis of a circular multi-coordinate synchronous segment motor and reconfigurable parallel kinematic mechanism. The multi-coordinate synchronous segment motor may have from two to six movable segments depending on the design, and number of the segments generally defines an internal mobility of the motor. A specific feature of the parallel kinematic mechanism consists in the possibility of its structure reconfiguration by serial connection of two neighboring rods with the help of free elements of their spherical joints into triangular circuits with one spherical hinge at the common vertex. As result of this, the controlled motion of motor movable segments is transformed into the complex spatial displacement of circular platform with number of degrees of freedom up to six inclusively.A mathematical model for solution of the kinematic problem in the investigated parallel mechanism has been offered in the paper. The model allows to calculate a position of movable segments of multi-coordinate synchronous motor depending on the desired position and orientation of the executive circular platform. The parametric definition of base point positions in the motor segments in time allows eventually to form algorithms of programmable motions.The paper substantiates ability to embed the developed motion system into projection unit of opto-mechanical equipment while preserving traditional configuration scheme. This provides the possibility of adaptive adjustment of optical elements during operation; it allows to adjust the optical elements when the geometry of projection system is changed due to deterioration. As result, main characteristics of projection system: resolution, depth of field and image contrast and distortion are maintained at the required level. The developed motion system can be used as a coordinate system of positioning, alignment and scanning in the assembly and other

  18. Solid-state circuits

    CERN Document Server

    Pridham, G J

    2013-01-01

    Solid-State Circuits provides an introduction to the theory and practice underlying solid-state circuits, laying particular emphasis on field effect transistors and integrated circuits. Topics range from construction and characteristics of semiconductor devices to rectification and power supplies, low-frequency amplifiers, sine- and square-wave oscillators, and high-frequency effects and circuits. Black-box equivalent circuits of bipolar transistors, physical equivalent circuits of bipolar transistors, and equivalent circuits of field effect transistors are also covered. This volume is divided

  19. Circuit analysis for dummies

    CERN Document Server

    Santiago, John

    2013-01-01

    Circuits overloaded from electric circuit analysis? Many universities require that students pursuing a degree in electrical or computer engineering take an Electric Circuit Analysis course to determine who will ""make the cut"" and continue in the degree program. Circuit Analysis For Dummies will help these students to better understand electric circuit analysis by presenting the information in an effective and straightforward manner. Circuit Analysis For Dummies gives you clear-cut information about the topics covered in an electric circuit analysis courses to help

  20. Current limiter circuit system

    Science.gov (United States)

    Witcher, Joseph Brandon; Bredemann, Michael V.

    2017-09-05

    An apparatus comprising a steady state sensing circuit, a switching circuit, and a detection circuit. The steady state sensing circuit is connected to a first, a second and a third node. The first node is connected to a first device, the second node is connected to a second device, and the steady state sensing circuit causes a scaled current to flow at the third node. The scaled current is proportional to a voltage difference between the first and second node. The switching circuit limits an amount of current that flows between the first and second device. The detection circuit is connected to the third node and the switching circuit. The detection circuit monitors the scaled current at the third node and controls the switching circuit to limit the amount of the current that flows between the first and second device when the scaled current is greater than a desired level.

  1. Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L. [CEA, DAM, DIF, F-91297 Arpajon (France); Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P. [ISAE, Universite de Toulouse, 10 avenue Edouard Belin, BP 54032, 31055 Toulouse Cedex 4 (France); Girard, S.; Ouerdane, Y.; Boukenter, A. [Universite de Saint-Etienne, Laboratoire H. Curien, UMR-5516, 42000, Saint-Etienne (France)

    2015-07-01

    Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered

  2. Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

    International Nuclear Information System (INIS)

    Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L.; Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P.; Girard, S.; Ouerdane, Y.; Boukenter, A.

    2015-01-01

    Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered

  3. Microwave integrated circuits for space applications

    Science.gov (United States)

    Leonard, Regis F.; Romanofsky, Robert R.

    1991-01-01

    Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.

  4. Emerging epidemic in a growing industry: cigarette smoking among female micro-electronics workers in Taiwan.

    Science.gov (United States)

    Lin, Y-P; Yen, L-L; Pan, L-Y; Chang, P-J; Cheng, T-J

    2005-03-01

    To explore the emerging tobacco epidemic in female workers in the growing micro-electronics industry of Taiwan. Workers were surveyed regarding their smoking status, sociodemographics and work characteristics. In total, 1950 female employees in two large micro-electronics companies in Taiwan completed the survey. Approximately 9.3% of the female employees were occasional or daily smokers at the time of the survey. The prevalence of smoking was higher in those aged 16-19 years (20.9%), those not married (12.9%), those with a high school education or less (11.7%), those employed by Company A (11.7%), shift workers (14.3%), and those who had been in their present employment for 1 year or less (13.6%). Results of multivariate adjusted logistic regression indicated that younger age, lower level of education, shorter periods of employment with the company and shift working were the important factors in determining cigarette smoking among the study participants. The odds ratio of being a daily smoker was similar to that of being a current smoker. Marital status was the only significant variable when comparing former smokers with current smokers. Smoking prevalence in female workers in the two micro-electronics companies studied was much higher than previous reports have suggested about female smoking prevalence in Taiwan and China. We suggest that smoking is no longer a 'male problem' in Taiwan. Future smoking cessation and prevention programmes should target young working women as well as men.

  5. Intuitive analog circuit design

    CERN Document Server

    Thompson, Marc

    2013-01-01

    Intuitive Analog Circuit Design outlines ways of thinking about analog circuits and systems that let you develop a feel for what a good, working analog circuit design should be. This book reflects author Marc Thompson's 30 years of experience designing analog and power electronics circuits and teaching graduate-level analog circuit design, and is the ideal reference for anyone who needs a straightforward introduction to the subject. In this book, Dr. Thompson describes intuitive and ""back-of-the-envelope"" techniques for designing and analyzing analog circuits, including transistor amplifi

  6. The circuit designer's companion

    CERN Document Server

    Williams, Tim

    1991-01-01

    The Circuit Designer's Companion covers the theoretical aspects and practices in analogue and digital circuit design. Electronic circuit design involves designing a circuit that will fulfill its specified function and designing the same circuit so that every production model of it will fulfill its specified function, and no other undesired and unspecified function.This book is composed of nine chapters and starts with a review of the concept of grounding, wiring, and printed circuits. The subsequent chapters deal with the passive and active components of circuitry design. These topics are foll

  7. Electronic devices and circuits

    CERN Document Server

    Pridham, Gordon John

    1972-01-01

    Electronic Devices and Circuits, Volume 3 provides a comprehensive account on electronic devices and circuits and includes introductory network theory and physics. The physics of semiconductor devices is described, along with field effect transistors, small-signal equivalent circuits of bipolar transistors, and integrated circuits. Linear and non-linear circuits as well as logic circuits are also considered. This volume is comprised of 12 chapters and begins with an analysis of the use of Laplace transforms for analysis of filter networks, followed by a discussion on the physical properties of

  8. Cosimulation of electromagnetics-circuit systems exploiting DGTD and MNA

    KAUST Repository

    Li, Ping

    2014-06-01

    A hybrid electromagnetics (EM)-circuit simulator exploiting the discontinuous Galerkin time domain (DGTD) method and the modified nodal analysis (MNA) algorithm is developed for analyzing hybrid distributive and nonlinear multiport lumped circuit systems. The computational domain is split into two subsystems. One is the EM subsystem that is analyzed by DGTD, while the other is the circuit subsystem that is solved by the MNA method. The coupling between the EM and circuit subsystems is enforced at the lumped port where related field and circuit unknowns are coupled via the use of numerical flux, port voltages, and current sources. Since the spatial operations of DGTD are localized, thanks to the use of numerical flux, coupling matrices between EM and circuit subsystems are small and are directly inverted. To handle nonlinear devices within the circuit subsystem, the standard Newton-Raphson method is applied to the nonlinear coupling matrix system. In addition, a local time-stepping scheme is applied to improve the efficiency of the hybrid solver. Numerical examples including single and multiport linear/nonlinear circuit networks are presented to validate the proposed solver. © 2014 IEEE.

  9. Electrical Circuits and Water Analogies

    Science.gov (United States)

    Smith, Frederick A.; Wilson, Jerry D.

    1974-01-01

    Briefly describes water analogies for electrical circuits and presents plans for the construction of apparatus to demonstrate these analogies. Demonstrations include series circuits, parallel circuits, and capacitors. (GS)

  10. Electric circuits essentials

    CERN Document Server

    REA, Editors of

    2012-01-01

    REA's Essentials provide quick and easy access to critical information in a variety of different fields, ranging from the most basic to the most advanced. As its name implies, these concise, comprehensive study guides summarize the essentials of the field covered. Essentials are helpful when preparing for exams, doing homework and will remain a lasting reference source for students, teachers, and professionals. Electric Circuits I includes units, notation, resistive circuits, experimental laws, transient circuits, network theorems, techniques of circuit analysis, sinusoidal analysis, polyph

  11. Piezoelectric drive circuit

    Science.gov (United States)

    Treu, C.A. Jr.

    1999-08-31

    A piezoelectric motor drive circuit is provided which utilizes the piezoelectric elements as oscillators and a Meacham half-bridge approach to develop feedback from the motor ground circuit to produce a signal to drive amplifiers to power the motor. The circuit automatically compensates for shifts in harmonic frequency of the piezoelectric elements due to pressure and temperature changes. 7 figs.

  12. Load testing circuit

    DEFF Research Database (Denmark)

    2009-01-01

    A load testing circuit a circuit tests the load impedance of a load connected to an amplifier. The load impedance includes a first terminal and a second terminal, the load testing circuit comprising a signal generator providing a test signal of a defined bandwidth to the first terminal of the load...

  13. Short-circuit logic

    NARCIS (Netherlands)

    Bergstra, J.A.; Ponse, A.

    2010-01-01

    Short-circuit evaluation denotes the semantics of propositional connectives in which the second argument is only evaluated if the first argument does not suffice to determine the value of the expression. In programming, short-circuit evaluation is widely used. A short-circuit logic is a variant of

  14. Signal sampling circuit

    NARCIS (Netherlands)

    Louwsma, S.M.; Vertregt, Maarten

    2011-01-01

    A sampling circuit for sampling a signal is disclosed. The sampling circuit comprises a plurality of sampling channels adapted to sample the signal in time-multiplexed fashion, each sampling channel comprising a respective track-and-hold circuit connected to a respective analogue to digital

  15. Signal sampling circuit

    NARCIS (Netherlands)

    Louwsma, S.M.; Vertregt, Maarten

    2010-01-01

    A sampling circuit for sampling a signal is disclosed. The sampling circuit comprises a plurality of sampling channels adapted to sample the signal in time-multiplexed fashion, each sampling channel comprising a respective track-and-hold circuit connected to a respective analogue to digital

  16. Feedback in analog circuits

    CERN Document Server

    Ochoa, Agustin

    2016-01-01

    This book describes a consistent and direct methodology to the analysis and design of analog circuits with particular application to circuits containing feedback. The analysis and design of circuits containing feedback is generally presented by either following a series of examples where each circuit is simplified through the use of insight or experience (someone else’s), or a complete nodal-matrix analysis generating lots of algebra. Neither of these approaches leads to gaining insight into the design process easily. The author develops a systematic approach to circuit analysis, the Driving Point Impedance and Signal Flow Graphs (DPI/SFG) method that does not require a-priori insight to the circuit being considered and results in factored analysis supporting the design function. This approach enables designers to account fully for loading and the bi-directional nature of elements both in the feedback path and in the amplifier itself, properties many times assumed negligible and ignored. Feedback circuits a...

  17. Realizing a supercapacitor in an electrical circuit

    Energy Technology Data Exchange (ETDEWEB)

    Fukuhara, Mikio, E-mail: fukuhara@niche.tohoku.ac.jp; Kuroda, Tomoyuki; Hasegawa, Fumihiko [New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579 (Japan)

    2014-11-17

    Capacitors are commonly used in electronic resonance circuits; however, capacitors have not been used for storing large amounts of electrical energy in electrical circuits. Here, we report a superior RC circuit which serves as an electrical storage system characterized by quick charging and long-term discharging of electricity. The improved energy storage characteristics in this mixed electric circuit (R{sub 1} + R{sub 2}C{sub 1}) with small resistor R{sub 1}, large resistor R{sub 2}, and large capacitor C{sub 1} are derived from the damming effect by large R{sub 2} in simple parallel R{sub 2}C{sub 1} circuit. However, no research work has been carried out previously on the use of capacitors as electrical energy storage devices in circuits. Combined with nanotechnology, we hope that our finding will play a remarkable role in a variety of applications such as hybrid electric vehicles and backup power supplies.

  18. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Rosales, E.; Cedeño, E. [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil); Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Hernandez-Wong, J. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); CONACYT, México, DF, México (Mexico); Rojas-Trigos, J. B.; Marin, E. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Gandra, F. C. G.; Mansanares, A. M., E-mail: manoel@ifi.unicamp.br [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil)

    2016-07-25

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  19. The Plateau de Bure ASTEP Platform Test in natural radiation environment of electronic components and circuits

    International Nuclear Information System (INIS)

    Autran, J.L.; Munteanu, D.; Sauze, S.; Roche, Ph.; Gasiot, G.; Borel, J.

    2010-01-01

    Reducing the size of microelectronic devices and increasing the integration density of circuits lead (following the famous Moore's law) to an increased sensitivity of circuits to natural terrestrial radiation environment. - Such sensitivity to atmospheric particles (mainly neutrons) can cause non-destructive (soft-errors) or destructive (latch-up) failures in most electronic circuits, including volatile static memories (SRAM), object of the research work carried out since 2004 on the European Test Platform ASTER. - This paper presents in details the ASTEP platform, its location, the instruments (neutron monitor of the Plateau de Bure) and the experiences (memory tester) currently installed on the Plateau de Bure. In a second part, we also report a synthesis of the key results concerning the natural radiation sensitivity of SRAM fabricated in 130 nm and 65 nm bulk silicon technologies. (authors)

  20. Job stress models, depressive disorders and work performance of engineers in microelectronics industry.

    Science.gov (United States)

    Chen, Sung-Wei; Wang, Po-Chuan; Hsin, Ping-Lung; Oates, Anthony; Sun, I-Wen; Liu, Shen-Ing

    2011-01-01

    Microelectronic engineers are considered valuable human capital contributing significantly toward economic development, but they may encounter stressful work conditions in the context of a globalized industry. The study aims at identifying risk factors of depressive disorders primarily based on job stress models, the Demand-Control-Support and Effort-Reward Imbalance models, and at evaluating whether depressive disorders impair work performance in microelectronics engineers in Taiwan. The case-control study was conducted among 678 microelectronics engineers, 452 controls and 226 cases with depressive disorders which were defined by a score 17 or more on the Beck Depression Inventory and a psychiatrist's diagnosis. The self-administered questionnaires included the Job Content Questionnaire, Effort-Reward Imbalance Questionnaire, demography, psychosocial factors, health behaviors and work performance. Hierarchical logistic regression was applied to identify risk factors of depressive disorders. Multivariate linear regressions were used to determine factors affecting work performance. By hierarchical logistic regression, risk factors of depressive disorders are high demands, low work social support, high effort/reward ratio and low frequency of physical exercise. Combining the two job stress models may have better predictive power for depressive disorders than adopting either model alone. Three multivariate linear regressions provide similar results indicating that depressive disorders are associated with impaired work performance in terms of absence, role limitation and social functioning limitation. The results may provide insight into the applicability of job stress models in a globalized high-tech industry considerably focused in non-Western countries, and the design of workplace preventive strategies for depressive disorders in Asian electronics engineering population.

  1. Active quenching circuit for a InGaAs single-photon avalanche diode

    International Nuclear Information System (INIS)

    Zheng Lixia; Wu Jin; Xi Shuiqing; Shi Longxing; Liu Siyang; Sun Weifeng

    2014-01-01

    We present a novel gated operation active quenching circuit (AQC). In order to simulate the quenching circuit a complete SPICE model of a InGaAs SPAD is set up according to the I–V characteristic measurement results of the detector. The circuit integrated with aROIC (readout integrated circuit) is fabricated in an CSMC 0.5 μm CMOS process and then hybrid packed with the detector. Chip measurement results show that the functionality of the circuit is correct and the performance is suitable for practical system applications. (semiconductor integrated circuits)

  2. Modeling biology with HDL languages: a first step toward a genetic design automation tool inspired from microelectronics.

    Science.gov (United States)

    Gendrault, Yves; Madec, Morgan; Lallement, Christophe; Haiech, Jacques

    2014-04-01

    Nowadays, synthetic biology is a hot research topic. Each day, progresses are made to improve the complexity of artificial biological functions in order to tend to complex biodevices and biosystems. Up to now, these systems are handmade by bioengineers, which require strong technical skills and leads to nonreusable development. Besides, scientific fields that share the same design approach, such as microelectronics, have already overcome several issues and designers succeed in building extremely complex systems with many evolved functions. On the other hand, in systems engineering and more specifically in microelectronics, the development of the domain has been promoted by both the improvement of technological processes and electronic design automation tools. The work presented in this paper paves the way for the adaptation of microelectronics design tools to synthetic biology. Considering the similarities and differences between the synthetic biology and microelectronics, the milestones of this adaptation are described. The first one concerns the modeling of biological mechanisms. To do so, a new formalism is proposed, based on an extension of the generalized Kirchhoff laws to biology. This way, a description of all biological mechanisms can be made with languages widely used in microelectronics. Our approach is therefore successfully validated on specific examples drawn from the literature.

  3. Proceedings of the Goddard Space Flight Center Workshop on Robotics for Commercial Microelectronic Processes in Space

    Science.gov (United States)

    1987-01-01

    Potential applications of robots for cost effective commercial microelectronic processes in space were studied and the associated robotic requirements were defined. Potential space application areas include advanced materials processing, bulk crystal growth, and epitaxial thin film growth and related processes. All possible automation of these processes was considered, along with energy and environmental requirements. Aspects of robot capabilities considered include system intelligence, ROM requirements, kinematic and dynamic specifications, sensor design and configuration, flexibility and maintainability. Support elements discussed included facilities, logistics, ground support, launch and recovery, and management systems.

  4. Automatic differentiation for gradient-based optimization of radiatively heated microelectronics manufacturing equipment

    Energy Technology Data Exchange (ETDEWEB)

    Moen, C.D.; Spence, P.A.; Meza, J.C.; Plantenga, T.D.

    1996-12-31

    Automatic differentiation is applied to the optimal design of microelectronic manufacturing equipment. The performance of nonlinear, least-squares optimization methods is compared between numerical and analytical gradient approaches. The optimization calculations are performed by running large finite-element codes in an object-oriented optimization environment. The Adifor automatic differentiation tool is used to generate analytic derivatives for the finite-element codes. The performance results support previous observations that automatic differentiation becomes beneficial as the number of optimization parameters increases. The increase in speed, relative to numerical differences, has a limited value and results are reported for two different analysis codes.

  5. Radiation protection measurements in nuclear engineering. The use of microelectronics is only just beginning

    International Nuclear Information System (INIS)

    Maushart, R.

    1986-01-01

    The progress achieved by microelectronics is impressive already now, but it is only a beginning. The contribution deals with the modern methods of representing measured data and with the processing of measured data as the optimum area of use of microprocessors. It outlines the uses of personnel dosimeters and portable dose rate meters, portable units with data storage capacity, new possibilities in monitoring the room air in large building complexes, gamma spectroscopy with very high purity germanium detectors, equivalent dose measurement with multichannel data evaluation, 'talking' equipment, and it also presents a forecast of future radiation protection measuring equipment. (orig.) [de

  6. RD53A Integrated Circuit Specifications

    OpenAIRE

    Garcia-Sciveres, Mauricio

    2015-01-01

    Specifications for the RD53 collaboration’s first engineering wafer run of an integrated circuit (IC) for hybrid pixel detector readout, called RD53A. RD53A is intended to demonstrate in a large format IC the suitability of the technology (including radiation tolerance), the stable low threshold operation, and the high hit and trigger rate capabilities, required for HL-LHC upgrades of ATLAS and CMS. The wafer scale production will permit the experiments to prototype bump bonding assembly with...

  7. ST Microelectronics

    CERN Document Server

    Patrice Loïez

    2002-01-01

    Photo 01 : Prof. Roger Cashmore, Research Director for Collider Programmes, Dr Salvatore Castorina, Corporate Vice President, DSG, Prof. Gigi Rolandi, CMS Tracker Project Manager. Photo 02 : Dr Salvatore Castorina signing the Guest Book. Photo 03 : Prof. Roger Cashmore, Dr Salvatore Castorina.

  8. Polymeric Microelectronics.

    Science.gov (United States)

    1981-06-01

    Swelling Procedure For Crosslinked Gel 2A.1 Materials: Spectral grade hexane Petri dish with glass plate cover Planchette Balance Vacuum oven 2A.2...Uncrosslinked Material) To determine the amount of uncrosslinked material decant the dupernatant hexane into a weighed planchette . Wash the gel and...swelling flask or dish with hexane again and pour into planchette . Place the planchette and its contents into a vacuum oven at 350C until the contents

  9. Modular thought in the circuit analysis

    Science.gov (United States)

    Wang, Feng

    2018-04-01

    Applied to solve the problem of modular thought, provides a whole for simplification's method, the complex problems have become of, and the study of circuit is similar to the above problems: the complex connection between components, make the whole circuit topic solution seems to be more complex, and actually components the connection between the have rules to follow, this article mainly tells the story of study on the application of the circuit modular thought. First of all, this paper introduces the definition of two-terminal network and the concept of two-terminal network equivalent conversion, then summarizes the common source resistance hybrid network modular approach, containing controlled source network modular processing method, lists the common module, typical examples analysis.

  10. Electric circuits and signals

    CERN Document Server

    Sabah, Nassir H

    2007-01-01

    Circuit Variables and Elements Overview Learning Objectives Electric Current Voltage Electric Power and Energy Assigned Positive Directions Active and Passive Circuit Elements Voltage and Current Sources The Resistor The Capacitor The Inductor Concluding Remarks Summary of Main Concepts and Results Learning Outcomes Supplementary Topics on CD Problems and Exercises Basic Circuit Connections and Laws Overview Learning Objectives Circuit Terminology Kirchhoff's Laws Voltage Division and Series Connection of Resistors Current Division and Parallel Connection of Resistors D-Y Transformation Source Equivalence and Transformation Reduced-Voltage Supply Summary of Main Concepts and Results Learning Outcomes Supplementary Topics and Examples on CD Problems and Exercises Basic Analysis of Resistive Circuits Overview Learning Objectives Number of Independent Circuit Equations Node-Voltage Analysis Special Considerations in Node-Voltage Analysis Mesh-Current Analysis Special Conside...

  11. [Shunt and short circuit].

    Science.gov (United States)

    Rangel-Abundis, Alberto

    2006-01-01

    Shunt and short circuit are antonyms. In French, the term shunt has been adopted to denote the alternative pathway of blood flow. However, in French, as well as in Spanish, the word short circuit (court-circuit and cortocircuito) is synonymous with shunt, giving rise to a linguistic and scientific inconsistency. Scientific because shunt and short circuit made reference to a phenomenon that occurs in the field of the physics. Because shunt and short circuit are antonyms, it is necessary to clarify that shunt is an alternative pathway of flow from a net of high resistance to a net of low resistance, maintaining the stream. Short circuit is the interruption of the flow, because a high resistance impeaches the flood. This concept is applied to electrical and cardiovascular physiology, as well as to the metabolic pathways.

  12. Microelectronics Revolution And The Impact Of Automation In The New Industrialized Countries

    Science.gov (United States)

    Baranauskas, Vitor

    1984-08-01

    A brief review of some important historical points on the origin of the Factories and the Industrial Revolution is presented with emphasis in the social problems related to the automation of the human labor. Until the World War I, the social changes provoked by the Industrial Revolution caused one division of the World in developed and underdeveloped countries. After that period, the less developed nations began their industrialization mainly through the Multinationals Corporations (MC). These enterprises were very important to the production and exportation of utilities and manufactures in general, mainly in those products which required intensive and direct human labor. At present time, with the pervasiveness of microelectronics in the automation, this age seems to reaching an end because all continous processes in industry tend economicaly toward total automation. This fact will cause a retraction in long-term investments and, beyond massive unemployment, there is a tendency for these MC industries to return to their original countries. The most promising alternative to avoid these events, and perhaps the unique, is to incentive an autonomous development in areas of high technology, as for instance, the microelectronics itself.

  13. Analog circuits cookbook

    CERN Document Server

    Hickman, Ian

    2013-01-01

    Analog Circuits Cookbook presents articles about advanced circuit techniques, components and concepts, useful IC for analog signal processing in the audio range, direct digital synthesis, and ingenious video op-amp. The book also includes articles about amplitude measurements on RF signals, linear optical imager, power supplies and devices, and RF circuits and techniques. Professionals and students of electrical engineering will find the book informative and useful.

  14. Analog circuit design

    CERN Document Server

    Dobkin, Bob

    2012-01-01

    Analog circuit and system design today is more essential than ever before. With the growth of digital systems, wireless communications, complex industrial and automotive systems, designers are being challenged to develop sophisticated analog solutions. This comprehensive source book of circuit design solutions aids engineers with elegant and practical design techniques that focus on common analog challenges. The book's in-depth application examples provide insight into circuit design and application solutions that you can apply in today's demanding designs. <

  15. Regenerative feedback resonant circuit

    Science.gov (United States)

    Jones, A. Mark; Kelly, James F.; McCloy, John S.; McMakin, Douglas L.

    2014-09-02

    A regenerative feedback resonant circuit for measuring a transient response in a loop is disclosed. The circuit includes an amplifier for generating a signal in the loop. The circuit further includes a resonator having a resonant cavity and a material located within the cavity. The signal sent into the resonator produces a resonant frequency. A variation of the resonant frequency due to perturbations in electromagnetic properties of the material is measured.

  16. CMOS circuits manual

    CERN Document Server

    Marston, R M

    1995-01-01

    CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

  17. Timergenerator circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Timer/Generator Circuits Manual is an 11-chapter text that deals mainly with waveform generator techniques and circuits. Each chapter starts with an explanation of the basic principles of its subject followed by a wide range of practical circuit designs. This work presents a total of over 300 practical circuits, diagrams, and tables.Chapter 1 outlines the basic principles and the different types of generator. Chapters 2 to 9 deal with a specific type of waveform generator, including sine, square, triangular, sawtooth, and special waveform generators pulse. These chapters also include pulse gen

  18. Electronic devices and circuits

    CERN Document Server

    Pridham, Gordon John

    1968-01-01

    Electronic Devices and Circuits, Volume 1 deals with the design and applications of electronic devices and circuits such as passive components, diodes, triodes and transistors, rectification and power supplies, amplifying circuits, electronic instruments, and oscillators. These topics are supported with introductory network theory and physics. This volume is comprised of nine chapters and begins by explaining the operation of resistive, inductive, and capacitive elements in direct and alternating current circuits. The theory for some of the expressions quoted in later chapters is presented. Th

  19. Maximum Acceleration Recording Circuit

    Science.gov (United States)

    Bozeman, Richard J., Jr.

    1995-01-01

    Coarsely digitized maximum levels recorded in blown fuses. Circuit feeds power to accelerometer and makes nonvolatile record of maximum level to which output of accelerometer rises during measurement interval. In comparison with inertia-type single-preset-trip-point mechanical maximum-acceleration-recording devices, circuit weighs less, occupies less space, and records accelerations within narrower bands of uncertainty. In comparison with prior electronic data-acquisition systems designed for same purpose, circuit simpler, less bulky, consumes less power, costs and analysis of data recorded in magnetic or electronic memory devices. Circuit used, for example, to record accelerations to which commodities subjected during transportation on trucks.

  20. MOS integrated circuit design

    CERN Document Server

    Wolfendale, E

    2013-01-01

    MOS Integral Circuit Design aims to help in the design of integrated circuits, especially large-scale ones, using MOS Technology through teaching of techniques, practical applications, and examples. The book covers topics such as design equation and process parameters; MOS static and dynamic circuits; logic design techniques, system partitioning, and layout techniques. Also featured are computer aids such as logic simulation and mask layout, as well as examples on simple MOS design. The text is recommended for electrical engineers who would like to know how to use MOS for integral circuit desi

  1. Circuits and filters handbook

    CERN Document Server

    Chen, Wai-Kai

    2003-01-01

    A bestseller in its first edition, The Circuits and Filters Handbook has been thoroughly updated to provide the most current, most comprehensive information available in both the classical and emerging fields of circuits and filters, both analog and digital. This edition contains 29 new chapters, with significant additions in the areas of computer-aided design, circuit simulation, VLSI circuits, design automation, and active and digital filters. It will undoubtedly take its place as the engineer's first choice in looking for solutions to problems encountered in the design, analysis, and behavi

  2. Security electronics circuits manual

    CERN Document Server

    MARSTON, R M

    1998-01-01

    Security Electronics Circuits Manual is an invaluable guide for engineers and technicians in the security industry. It will also prove to be a useful guide for students and experimenters, as well as providing experienced amateurs and DIY enthusiasts with numerous ideas to protect their homes, businesses and properties.As with all Ray Marston's Circuits Manuals, the style is easy-to-read and non-mathematical, with the emphasis firmly on practical applications, circuits and design ideas. The ICs and other devices used in the practical circuits are modestly priced and readily available ty

  3. Circuits on Cylinders

    DEFF Research Database (Denmark)

    Hansen, Kristoffer Arnsfelt; Miltersen, Peter Bro; Vinay, V

    2006-01-01

    We consider the computational power of constant width polynomial size cylindrical circuits and nondeterministic branching programs. We show that every function computed by a Pi2 o MOD o AC0 circuit can also be computed by a constant width polynomial size cylindrical nondeterministic branching pro...

  4. CMOS analog circuit design

    CERN Document Server

    Allen, Phillip E

    1987-01-01

    This text presents the principles and techniques for designing analog circuits to be implemented in a CMOS technology. The level is appropriate for seniors and graduate students familiar with basic electronics, including biasing, modeling, circuit analysis, and some familiarity with frequency response. Students learn the methodology of analog integrated circuit design through a hierarchically-oriented approach to the subject that provides thorough background and practical guidance for designing CMOS analog circuits, including modeling, simulation, and testing. The authors' vast industrial experience and knowledge is reflected in the circuits, techniques, and principles presented. They even identify the many common pitfalls that lie in the path of the beginning designer--expert advice from veteran designers. The text mixes the academic and practical viewpoints in a treatment that is neither superficial nor overly detailed, providing the perfect balance.

  5. Polarization Control for Silicon Photonic Circuits

    Science.gov (United States)

    Caspers, Jan Niklas

    In recent years, the field of silicon photonics has received much interest from researchers and companies across the world. The idea is to use photons to transmit information on a computer chip in order to increase computational speed while decreasing the power required for computation. To allow for communication between the chip and other components, such as the computer memory, these silicon photonics circuits need to be interfaced with optical fiber. Unfortunately, in order to interface an optical fiber with an integrated photonics circuit two major challenges need to be overcome: a mode-size mismatch as well as a polarization mismatch. While the problem of mode-size has been well investigated, the polarization mismatch has yet to be addressed. In order to solve the polarization mismatch one needs to gain control over the polarization of the light in a waveguide. In this thesis, I will present the components required to solve the polarization mismatch. Using a novel wave guiding structure, the hybrid plasmonic waveguide, an ultra-compact polarization rotator is designed, fabricated, and tested. The hybrid plasmonic rotator has a performance similar to purely dielectric rotators while being more than an order of magnitude smaller. Additionally, a broadband hybrid plasmonic coupler is designed and measured. This coupler has a performance similar to dielectric couplers while having a footprint an order of magnitude smaller. Finally, a system solution to the polarization mismatch is provided. The system, a polarization adapter, matches the incoming changing polarization from the fiber actively to the correct one of the silicon photonics circuit. The polarization adapter is demonstrated experimentally to prove its operation. This proof is based on dielectric components, but the aforementioned hybrid plasmonic waveguide components would make the system more compact.

  6. Determining DfT Hardware by VHDL-AMS Fault Simulation for Biological Micro-Electronic Fluidic Arrays

    NARCIS (Netherlands)

    Kerkhoff, Hans G.; Zhang, X.; Liu, H.; Richardson, A.; Nouet, P.; Azais, F.

    2005-01-01

    The interest of microelectronic fluidic arrays for biomedical applications, like DNA determination, is rapidly increasing. In order to evaluate these systems in terms of required Design-for-Test structures, fault simulations in both fluidic and electronic domains are necessary. VHDL-AMS can be used

  7. Assessing Advanced High School and Undergraduate Students' Thinking Skills: The Chemistry--From the Nanoscale to Microelectronics Module

    Science.gov (United States)

    Dori, Yehudit Judy; Dangur, Vered; Avargil, Shirly; Peskin, Uri

    2014-01-01

    Chemistry students in Israel have two options for studying chemistry: basic or honors (advanced placement). For instruction in high school honors chemistry courses, we developed a module focusing on abstract topics in quantum mechanics: Chemistry--From the Nanoscale to Microelectronics. The module adopts a visual-conceptual approach, which…

  8. Characterization by ion beams of surfaces and interfaces of alternative materials for future microelectronic devices

    International Nuclear Information System (INIS)

    Krug, C.; Stedile, F.C.; Radtke, C.; Rosa, E.B.O. da; Morais, J.; Freire, F.L.; Baumvol, I.J.R.

    2003-01-01

    We present the potential use of ion beam techniques such as nuclear reactions, channelling Rutherford backscattering spectrometry, and low energy ion scattering in the characterization of the surface and interface of materials thought to be possible substitutes to Si (like SiC, for example) and to SiO 2 films (like Al 2 O 3 films, for example) in microelectronic devices. With narrow nuclear reaction resonance profiling the depth distribution of light elements such as Al and O in the films can be obtained non-destructively and with subnanometric depth resolution, allowing one to follow the mobility of each species under thermal treatments, for instance. Thinning of an amorphous layer at the surface of single-crystalline samples can be determined using channelling of He + ions and detection of the scattered light particles. Finally, the use of He + ions in the 1 keV range allows elemental analysis of the first monolayer at the sample surface

  9. CREME96: A revision of the Cosmic Ray Effects on Micro-Electronics code

    International Nuclear Information System (INIS)

    Tylka, A.J.; Adams, J.H. Jr.; Boberg, P.R.

    1997-01-01

    CREME96 is an update of the Cosmic Ray Effects on Micro-Electronics code, a widely-used suite of programs for creating numerical models of the ionizing-radiation environment in near-Earth orbits and for evaluating radiation effects in spacecraft. CREME96, which is now available over the World-Wide Web (WWW) at http://crsp3.nrl.navy.mil/creme96/, has many significant features, including (1) improved models of the galactic cosmic ray, anomalous cosmic ray, and solar energetic particle (flare) components of the near-Earth environment; (2) improved geomagnetic transmission calculations; (3) improved nuclear transport routines; (4) improved single-event upset (SEU) calculation techniques, for both proton-induced and direct-ionization-induced SEUs; and (5) an easy-to-use graphical interface, with extensive on-line tutorial information. In this paper the authors document some of these improvements

  10. Approximate circuits for increased reliability

    Science.gov (United States)

    Hamlet, Jason R.; Mayo, Jackson R.

    2015-08-18

    Embodiments of the invention describe a Boolean circuit having a voter circuit and a plurality of approximate circuits each based, at least in part, on a reference circuit. The approximate circuits are each to generate one or more output signals based on values of received input signals. The voter circuit is to receive the one or more output signals generated by each of the approximate circuits, and is to output one or more signals corresponding to a majority value of the received signals. At least some of the approximate circuits are to generate an output value different than the reference circuit for one or more input signal values; however, for each possible input signal value, the majority values of the one or more output signals generated by the approximate circuits and received by the voter circuit correspond to output signal result values of the reference circuit.

  11. Circuit for Driving Piezoelectric Transducers

    Science.gov (United States)

    Randall, David P.; Chapsky, Jacob

    2009-01-01

    The figure schematically depicts an oscillator circuit for driving a piezoelectric transducer to excite vibrations in a mechanical structure. The circuit was designed and built to satisfy application-specific requirements to drive a selected one of 16 such transducers at a regulated amplitude and frequency chosen to optimize the amount of work performed by the transducer and to compensate for both (1) temporal variations of the resonance frequency and damping time of each transducer and (2) initially unknown differences among the resonance frequencies and damping times of different transducers. In other words, the circuit is designed to adjust itself to optimize the performance of whichever transducer is selected at any given time. The basic design concept may be adaptable to other applications that involve the use of piezoelectric transducers in ultrasonic cleaners and other apparatuses in which high-frequency mechanical drives are utilized. This circuit includes three resistor-capacitor networks that, together with the selected piezoelectric transducer, constitute a band-pass filter having a peak response at a frequency of about 2 kHz, which is approximately the resonance frequency of the piezoelectric transducers. Gain for generating oscillations is provided by a power hybrid operational amplifier (U1). A junction field-effect transistor (Q1) in combination with a resistor (R4) is used as a voltage-variable resistor to control the magnitude of the oscillation. The voltage-variable resistor is part of a feedback control loop: Part of the output of the oscillator is rectified and filtered for use as a slow negative feedback to the gate of Q1 to keep the output amplitude constant. The response of this control loop is much slower than 2 kHz and, therefore, does not introduce significant distortion of the oscillator output, which is a fairly clean sine wave. The positive AC feedback needed to sustain oscillations is derived from sampling the current through the

  12. Wide Bandgap Semiconductor Based Solid State Smart Circuit Protection, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Advanced solid state power component technology is necessary for future hybrid aircraft systems with increased power demands. There is a need for adequate circuit...

  13. Troubleshooting analog circuits

    CERN Document Server

    Pease, Robert A

    1991-01-01

    Troubleshooting Analog Circuits is a guidebook for solving product or process related problems in analog circuits. The book also provides advice in selecting equipment, preventing problems, and general tips. The coverage of the book includes the philosophy of troubleshooting; the modes of failure of various components; and preventive measures. The text also deals with the active components of analog circuits, including diodes and rectifiers, optically coupled devices, solar cells, and batteries. The book will be of great use to both students and practitioners of electronics engineering. Other

  14. Modern TTL circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Modern TTL Circuits Manual provides an introduction to the basic principles of Transistor-Transistor Logic (TTL). This book outlines the major features of the 74 series of integrated circuits (ICs) and introduces the various sub-groups of the TTL family.Organized into seven chapters, this book begins with an overview of the basics of digital ICs. This text then examines the symbology and mathematics of digital logic. Other chapters consider a variety of topics, including waveform generator circuitry, clocked flip-flop and counter circuits, special counter/dividers, registers, data latches, com

  15. Circuit analysis with Multisim

    CERN Document Server

    Baez-Lopez, David

    2011-01-01

    This book is concerned with circuit simulation using National Instruments Multisim. It focuses on the use and comprehension of the working techniques for electrical and electronic circuit simulation. The first chapters are devoted to basic circuit analysis.It starts by describing in detail how to perform a DC analysis using only resistors and independent and controlled sources. Then, it introduces capacitors and inductors to make a transient analysis. In the case of transient analysis, it is possible to have an initial condition either in the capacitor voltage or in the inductor current, or bo

  16. Optoelectronics circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Optoelectronics Circuits Manual covers the basic principles and characteristics of the best known types of optoelectronic devices, as well as the practical applications of many of these optoelectronic devices. The book describes LED display circuits and LED dot- and bar-graph circuits and discusses the applications of seven-segment displays, light-sensitive devices, optocouplers, and a variety of brightness control techniques. The text also tackles infrared light-beam alarms and multichannel remote control systems. The book provides practical user information and circuitry and illustrations.

  17. 'Speedy' superconducting circuits

    International Nuclear Information System (INIS)

    Holst, T.

    1994-01-01

    The most promising concept for realizing ultra-fast superconducting digital circuits is the Rapid Single Flux Quantum (RSFQ) logic. The basic physical principle behind RSFQ logic, which include the storage and transfer of individual magnetic flux quanta in Superconducting Quantum Interference Devices (SQUIDs), is explained. A Set-Reset flip-flop is used as an example of the implementation of an RSFQ based circuit. Finally, the outlook for high-temperature superconducting materials in connection with RSFQ circuits is discussed in some details. (au)

  18. Analogue circuits simulation

    Energy Technology Data Exchange (ETDEWEB)

    Mendo, C

    1988-09-01

    Most analogue simulators have evolved from SPICE. The history and description of SPICE-like simulators are given. From a mathematical formulation of the electronic circuit the following analysis are possible: DC, AC, transient, noise, distortion, Worst Case and Statistical.

  19. Printed circuit for ATLAS

    CERN Multimedia

    Laurent Guiraud

    1999-01-01

    A printed circuit board made by scientists in the ATLAS collaboration for the transition radiaton tracker (TRT). This will read data produced when a high energy particle crosses the boundary between two materials with different electrical properties.

  20. Magnonic logic circuits

    International Nuclear Information System (INIS)

    Khitun, Alexander; Bao Mingqiang; Wang, Kang L

    2010-01-01

    We describe and analyse possible approaches to magnonic logic circuits and basic elements required for circuit construction. A distinctive feature of the magnonic circuitry is that information is transmitted by spin waves propagating in the magnetic waveguides without the use of electric current. The latter makes it possible to exploit spin wave phenomena for more efficient data transfer and enhanced logic functionality. We describe possible schemes for general computing and special task data processing. The functional throughput of the magnonic logic gates is estimated and compared with the conventional transistor-based approach. Magnonic logic circuits allow scaling down to the deep submicrometre range and THz frequency operation. The scaling is in favour of the magnonic circuits offering a significant functional advantage over the traditional approach. The disadvantages and problems of the spin wave devices are also discussed.

  1. Peak reading detector circuit

    International Nuclear Information System (INIS)

    Courtin, E.; Grund, K.; Traub, S.; Zeeb, H.

    1975-01-01

    The peak reading detector circuit serves for picking up the instants during which peaks of a given polarity occur in sequences of signals in which the extreme values, their time intervals, and the curve shape of the signals vary. The signal sequences appear in measuring the foetal heart beat frequence from amplitude-modulated ultrasonic, electrocardiagram, and blood pressure signals. In order to prevent undesired emission of output signals from, e. g., disturbing intermediate extreme values, the circuit consists of the series connections of a circuit to simulate an ideal diode, a strong unit, a discriminator for the direction of charging current, a time-delay circuit, and an electronic switch lying in the decharging circuit of the storage unit. The time-delay circuit thereby causes storing of a preliminary maximum value being used only after a certain time delay for the emission of the output signal. If a larger extreme value occurs during the delay time the preliminary maximum value is cleared and the delay time starts running anew. (DG/PB) [de

  2. Color Coding of Circuit Quantities in Introductory Circuit Analysis Instruction

    Science.gov (United States)

    Reisslein, Jana; Johnson, Amy M.; Reisslein, Martin

    2015-01-01

    Learning the analysis of electrical circuits represented by circuit diagrams is often challenging for novice students. An open research question in electrical circuit analysis instruction is whether color coding of the mathematical symbols (variables) that denote electrical quantities can improve circuit analysis learning. The present study…

  3. Project Circuits in a Basic Electric Circuits Course

    Science.gov (United States)

    Becker, James P.; Plumb, Carolyn; Revia, Richard A.

    2014-01-01

    The use of project circuits (a photoplethysmograph circuit and a simple audio amplifier), introduced in a sophomore-level electric circuits course utilizing active learning and inquiry-based methods, is described. The development of the project circuits was initiated to promote enhanced engagement and deeper understanding of course content among…

  4. Alternative ceramic circuit constructions for low cost, high reliability applications

    International Nuclear Information System (INIS)

    Modes, Ch.; O'Neil, M.

    1997-01-01

    The growth in the use of hybrid circuit technology has recently been challenged by recent advances in low cost laminate technology, as well as the continued integration of functions into IC's. Size reduction of hybrid 'packages' has turned out to be a means to extend the useful life of this technology. The suppliers of thick film materials technology have responded to this challenge by developing a number of technology options to reduce circuit size, increase density, and reduce overall cost, while maintaining or increasing reliability. This paper provides an overview of the processes that have been developed, and, in many cases are used widely to produce low cost, reliable microcircuits. Comparisons of each of these circuit fabrication processes are made with a discussion of advantages and disadvantages of each technology. (author)

  5. Analog and Power Microelectronics to Higher Radiation Levels and Lower Temperatures

    Data.gov (United States)

    National Aeronautics and Space Administration — A study was done to examine low-temperature effects and radiation damage properties of bipolar integrated circuits. Anticipated benefits: useful in missions with...

  6. Simplifying the circuit of Josephson parametric converters

    Science.gov (United States)

    Abdo, Baleegh; Brink, Markus; Chavez-Garcia, Jose; Keefe, George

    Josephson parametric converters (JPCs) are quantum-limited three-wave mixing devices that can play various important roles in quantum information processing in the microwave domain, including amplification of quantum signals, transduction of quantum information, remote entanglement of qubits, nonreciprocal amplification, and circulation of signals. However, the input-output and biasing circuit of a state-of-the-art JPC consists of bulky components, i.e. two commercial off-chip broadband 180-degree hybrids, four phase-matched short coax cables, and one superconducting magnetic coil. Such bulky hardware significantly hinders the integration of JPCs in scalable quantum computing architectures. In my talk, I will present ideas on how to simplify the JPC circuit and show preliminary experimental results

  7. Low latency asynchronous interface circuits

    Science.gov (United States)

    Sadowski, Greg

    2017-06-20

    In one form, a logic circuit includes an asynchronous logic circuit, a synchronous logic circuit, and an interface circuit coupled between the asynchronous logic circuit and the synchronous logic circuit. The asynchronous logic circuit has a plurality of asynchronous outputs for providing a corresponding plurality of asynchronous signals. The synchronous logic circuit has a plurality of synchronous inputs corresponding to the plurality of asynchronous outputs, a stretch input for receiving a stretch signal, and a clock output for providing a clock signal. The synchronous logic circuit provides the clock signal as a periodic signal but prolongs a predetermined state of the clock signal while the stretch signal is active. The asynchronous interface detects whether metastability could occur when latching any of the plurality of the asynchronous outputs of the asynchronous logic circuit using said clock signal, and activates the stretch signal while the metastability could occur.

  8. Nonlinear optics quantum computing with circuit QED.

    Science.gov (United States)

    Adhikari, Prabin; Hafezi, Mohammad; Taylor, J M

    2013-02-08

    One approach to quantum information processing is to use photons as quantum bits and rely on linear optical elements for most operations. However, some optical nonlinearity is necessary to enable universal quantum computing. Here, we suggest a circuit-QED approach to nonlinear optics quantum computing in the microwave regime, including a deterministic two-photon phase gate. Our specific example uses a hybrid quantum system comprising a LC resonator coupled to a superconducting flux qubit to implement a nonlinear coupling. Compared to the self-Kerr nonlinearity, we find that our approach has improved tolerance to noise in the qubit while maintaining fast operation.

  9. A cell-microelectronic sensing technique for profiling cytotoxicity of chemicals

    International Nuclear Information System (INIS)

    Boyd, Jessica M.; Huang, Li; Xie Li; Moe, Birget; Gabos, Stephan; Li Xingfang

    2008-01-01

    A cell-microelectronic sensing technique is developed for profiling chemical cytotoxicity and is used to study different cytotoxic effects of the same class chemicals using nitrosamines as examples. This technique uses three human cell lines (T24 bladder, HepG2 liver, and A549 lung carcinoma cells) and Chinese hamster ovary (CHO-K1) cells in parallel as the living components of the sensors of a real-time cell electronic sensing (RT-CES) method for dynamic monitoring of chemical toxicity. The RT-CES technique measures changes in the impedance of individual microelectronic wells that is correlated linearly with changes in cell numbers during t log phase of cell growth, thus allowing determination of cytotoxicity. Four nitrosamines, N-nitrosodimethylamine (NDMA), N-nitrosodiphenylamine (NDPhA), N-nitrosopiperidine (NPip), and N-nitrosopyrrolidine (NPyr), were examined and unique cytotoxicity profiles were detected for each nitrosamine. In vitro cytotoxicity values (IC 50 ) for NDPhA (ranging from 0.6 to 1.9 mM) were significantly lower than the IC 50 values for the well-known carcinogen NDMA (15-95 mM) in all four cell lines. T24 cells were the most sensitive to nitrosamine exposure among the four cell lines tested (T24 > CHO > A549 > HepG2), suggesting that T24 may serve as a new sensitive model for cytotoxicity screening. Cell staining results confirmed that administration of the IC 50 concentration from the RT-CES experiments inhibited cell growth by 50% compared to the controls, indicating that the RT-CES method provides reliable measures of IC 50 . Staining and cell-cycle analysis confirmed that NDPhA caused cell-cycle arrest at the G0/G1 phase, whereas NDMA did not disrupt the cell cycle but induced cell death, thus explaining the different cytotoxicity profiles detected by the RT-CES method. The parallel cytotoxicity profiling of nitrosamines on the four cell lines by the RT-CES method led to the discovery of the unique cytotoxicity of NDPhA causing cell

  10. A cell-microelectronic sensing technique for profiling cytotoxicity of chemicals

    Energy Technology Data Exchange (ETDEWEB)

    Boyd, Jessica M [Division of Analytical and Environmental Toxicology, Department of Laboratory Medicine and Pathology, Faculty of Medicine and Dentistry, 10-102 Clinical Sciences Building, Edmonton, Alberta, T6G 2G3 (Canada); Huang, Li [Environmental Health Sciences, Department of Public Health Sciences, School of Public Health, University of Alberta, 10-102 Clinical Sciences Building, Edmonton, Alberta, T6G 2G3 (Canada); Li, Xie; Moe, Birget [Division of Analytical and Environmental Toxicology, Department of Laboratory Medicine and Pathology, Faculty of Medicine and Dentistry, 10-102 Clinical Sciences Building, Edmonton, Alberta, T6G 2G3 (Canada); Gabos, Stephan [Public Health Surveillance and Environmental Health, Alberta Health and Wellness, 10025 Jasper Avenue, Box 1360, Edmonton, Alberta, T5J 2N3 (Canada); Xingfang, Li [Division of Analytical and Environmental Toxicology, Department of Laboratory Medicine and Pathology, Faculty of Medicine and Dentistry, 10-102 Clinical Sciences Building, Edmonton, Alberta, T6G 2G3 (Canada); Environmental Health Sciences, Department of Public Health Sciences, School of Public Health, University of Alberta, 10-102 Clinical Sciences Building, Edmonton, Alberta, T6G 2G3 (Canada)], E-mail: xingfang.li@ualberta.ca

    2008-05-12

    A cell-microelectronic sensing technique is developed for profiling chemical cytotoxicity and is used to study different cytotoxic effects of the same class chemicals using nitrosamines as examples. This technique uses three human cell lines (T24 bladder, HepG2 liver, and A549 lung carcinoma cells) and Chinese hamster ovary (CHO-K1) cells in parallel as the living components of the sensors of a real-time cell electronic sensing (RT-CES) method for dynamic monitoring of chemical toxicity. The RT-CES technique measures changes in the impedance of individual microelectronic wells that is correlated linearly with changes in cell numbers during t log phase of cell growth, thus allowing determination of cytotoxicity. Four nitrosamines, N-nitrosodimethylamine (NDMA), N-nitrosodiphenylamine (NDPhA), N-nitrosopiperidine (NPip), and N-nitrosopyrrolidine (NPyr), were examined and unique cytotoxicity profiles were detected for each nitrosamine. In vitro cytotoxicity values (IC{sub 50}) for NDPhA (ranging from 0.6 to 1.9 mM) were significantly lower than the IC{sub 50} values for the well-known carcinogen NDMA (15-95 mM) in all four cell lines. T24 cells were the most sensitive to nitrosamine exposure among the four cell lines tested (T24 > CHO > A549 > HepG2), suggesting that T24 may serve as a new sensitive model for cytotoxicity screening. Cell staining results confirmed that administration of the IC{sub 50} concentration from the RT-CES experiments inhibited cell growth by 50% compared to the controls, indicating that the RT-CES method provides reliable measures of IC{sub 50}. Staining and cell-cycle analysis confirmed that NDPhA caused cell-cycle arrest at the G0/G1 phase, whereas NDMA did not disrupt the cell cycle but induced cell death, thus explaining the different cytotoxicity profiles detected by the RT-CES method. The parallel cytotoxicity profiling of nitrosamines on the four cell lines by the RT-CES method led to the discovery of the unique cytotoxicity of NDPh

  11. RD53A Integrated Circuit Specifications

    CERN Document Server

    Garcia-Sciveres, Mauricio

    2015-01-01

    Specifications for the RD53 collaboration’s first engineering wafer run of an integrated circuit (IC) for hybrid pixel detector readout, called RD53A. RD53A is intended to demonstrate in a large format IC the suitability of the technology (including radiation tolerance), the stable low threshold operation, and the high hit and trigger rate capabilities, required for HL-LHC upgrades of ATLAS and CMS. The wafer scale production will permit the experiments to prototype bump bonding assembly with realistic sensors in this new technology and to measure the performance of hybrid assemblies. RD53A is not intended to be a final production IC for use in an experiment, and will contain design variations for testing purposes, making the pixel matrix non-uniform.

  12. Junction and circuit fabrication

    International Nuclear Information System (INIS)

    Jackel, L.D.

    1980-01-01

    Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

  13. Displacement Damage Effects in Solar Cells: Mining Damage From the Microelectronics and Photonics Test Bed Space Experiment

    Science.gov (United States)

    Hardage, Donna (Technical Monitor); Walters, R. J.; Morton, T. L.; Messenger, S. R.

    2004-01-01

    The objective is to develop an improved space solar cell radiation response analysis capability and to produce a computer modeling tool which implements the analysis. This was accomplished through analysis of solar cell flight data taken on the Microelectronics and Photonics Test Bed experiment. This effort specifically addresses issues related to rapid technological change in the area of solar cells for space applications in order to enhance system performance, decrease risk, and reduce cost for future missions.

  14. Preliminary Flight Results of the Microelectronics and Photonics Test Bed: NASA DR1773 Fiber Optic Data Bus Experiment

    Science.gov (United States)

    Jackson, George L.; LaBel, Kenneth A.; Marshall, Cheryl; Barth, Janet; Seidleck, Christina; Marshall, Paul

    1998-01-01

    NASA Goddard Spare Flight Center's (GSFC) Dual Rate 1773 (DR1773) Experiment on the Microelectronic and Photonic Test Bed (MPTB) has provided valuable information on the performance of the AS 1773 fiber optic data bus in the space radiation environment. Correlation of preliminary experiment data to ground based radiation test results show the AS 1773 bus is employable in future spacecraft applications requiring radiation tolerant communication links.

  15. Robust design of microelectronics assemblies against mechanical shock, temperature and moisture effects of temperature, moisture and mechanical driving forces

    CERN Document Server

    Wong, E-H

    2015-01-01

    Robust Design of Microelectronics Assemblies Against Mechanical Shock, Temperature and Moisture discusses how the reliability of packaging components is a prime concern to electronics manufacturers. The text presents a thorough review of this important field of research, providing users with a practical guide that discusses theoretical aspects, experimental results, and modeling techniques. The authors use their extensive experience to produce detailed chapters covering temperature, moisture, and mechanical shock induced failure, adhesive interconnects, and viscoelasticity. Useful progr

  16. Small circuits for cryptography.

    Energy Technology Data Exchange (ETDEWEB)

    Torgerson, Mark Dolan; Draelos, Timothy John; Schroeppel, Richard Crabtree; Miller, Russell D.; Anderson, William Erik

    2005-10-01

    This report examines a number of hardware circuit design issues associated with implementing certain functions in FPGA and ASIC technologies. Here we show circuit designs for AES and SHA-1 that have an extremely small hardware footprint, yet show reasonably good performance characteristics as compared to the state of the art designs found in the literature. Our AES performance numbers are fueled by an optimized composite field S-box design for the Stratix chipset. Our SHA-1 designs use register packing and feedback functionalities of the Stratix LE, which reduce the logic element usage by as much as 72% as compared to other SHA-1 designs.

  17. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  18. Primer printed circuit boards

    CERN Document Server

    Argyle, Andrew

    2009-01-01

    Step-by-step instructions for making your own PCBs at home. Making your own printed circuit board (PCB) might seem a daunting task, but once you master the steps, it's easy to attain professional-looking results. Printed circuit boards, which connect chips and other components, are what make almost all modern electronic devices possible. PCBs are made from sheets of fiberglass clad with copper, usually in multiplelayers. Cut a computer motherboard in two, for instance, and you'll often see five or more differently patterned layers. Making boards at home is relatively easy

  19. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  20. Circuit design for reliability

    CERN Document Server

    Cao, Yu; Wirth, Gilson

    2015-01-01

    This book presents physical understanding, modeling and simulation, on-chip characterization, layout solutions, and design techniques that are effective to enhance the reliability of various circuit units.  The authors provide readers with techniques for state of the art and future technologies, ranging from technology modeling, fault detection and analysis, circuit hardening, and reliability management. Provides comprehensive review on various reliability mechanisms at sub-45nm nodes; Describes practical modeling and characterization techniques for reliability; Includes thorough presentation of robust design techniques for major VLSI design units; Promotes physical understanding with first-principle simulations.

  1. Electronic circuits fundamentals & applications

    CERN Document Server

    Tooley, Mike

    2015-01-01

    Electronics explained in one volume, using both theoretical and practical applications.New chapter on Raspberry PiCompanion website contains free electronic tools to aid learning for students and a question bank for lecturersPractical investigations and questions within each chapter help reinforce learning Mike Tooley provides all the information required to get to grips with the fundamentals of electronics, detailing the underpinning knowledge necessary to appreciate the operation of a wide range of electronic circuits, including amplifiers, logic circuits, power supplies and oscillators. The

  2. Feasibility of Observing and Characterizing Single Ion Strikes in Microelectronic Components

    International Nuclear Information System (INIS)

    Dingreville, Remi Philippe Michel; Hattar, Khalid Mikhiel; Bufford, Daniel Charles

    2015-01-01

    The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. A single high-energy charged particle can degrade or permanently destroy the microelectronic component, potentially altering the course or function of the systems. Disruption of the the crystalline structure through the introduction of quasi-stable defect structures can change properties from semiconductor to conductor. Typically, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. In this LDRD Express, in-situ ion irradiation transmission microscopy (TEM) in-situ TEM experiments combined with atomistic simulations have been conducted to determine the feasibility of imaging and characterizing the defect structure resulting from a single cascade in silicon. In-situ TEM experiments have been conducted to demonstrate that a single ion strike can be observed in Si thin films with nanometer resolution in real time using the in-situ ion irradiation transmission electron microscope (I 3 TEM). Parallel to this experimental effort, ion implantation has been numerically simulated using Molecular Dynamics (MD). This numerical framework provides detailed predictions of the damage and follow the evolution of the damage during the first nanoseconds. The experimental results demonstrate that single ion strike can be observed in prototypical semiconductors.

  3. Enhancement of microelectronic device performances by photothermal annealing under SiCl4 ambient

    International Nuclear Information System (INIS)

    Hassen, M.; Ben Jaballah, A.; Hajji, M.; Ezzaouia, H.

    2006-01-01

    The use of low cost silicon wafers seems to be very attractive for photovoltaic and microelectronic devices. However, this material is widely contaminated by different impurities particularly transitions metals, which deteriorate the lifetimes and the bulk diffusion lengths of the minority charge carriers. One possible way to overcome this undesirable behavior is to include an efficient purification technique in the process of device fabrication. In this work, we present the effect of photothermal treatments of monocrystalline Czochralski silicon substrates under SiCl 4 /N 2 atmosphere using a thin sacrificial porous silicon layer. The main results show a decrease of the resistivity over 40 μm depth. The Hall mobility of the majority charge carriers is improved from 300 to 1417 cm 2 V -1 s -1 . The capacitance-voltage (C-V) characteristics of metal/SiO 2 /Si (MIS) structures indicate a decrease of carrier concentration which confirms the results obtained by Hall Effect and Van Der Pauw method. The reduction of boron concentration in Czochralski silicon may reduce boron- and oxygen related metastable defect centers

  4. Quality politics: an immaterial investment for companies in (micro)electronics

    Science.gov (United States)

    Bacivarov, I. C.; Lupan, R.; Robledo, C.; Bacivarov, Angelica

    2010-11-01

    With the globalization of the markets and the growth of competitiveness in the manufacturing sector, quality has become a key factor of success. Quality is particularly important for the companies which activate in the micro(electronics) field. The quality management system holds a vital place in the company's structure. Implementing such a system requires important operating costs. These costs are known as Quality Obtaining Costs (QOC) and may be considered as an investment. Planning an investment, means evaluating its return in order to see if it is profitable or not. Measuring the return of quality politics investment raise some delicate problems. We may calculate some aspects of the return of investment by measuring the shape of non-quality costs. An eventual decrease of these costs could be synonym with a profitable investment. But the advantages of good quality politics cannot be measured only by taking into consideration the non-quality costs (even if they include direct and indirect costs). There are also intangible advantages (like mark image, competences, polyvalence, client's satisfaction...) that derive from quality approaches. How to evaluate this type of consequences / advantages? The idea developed in this article is to considerate the quality politics like un immaterial/intelligent investment. Therefore could it be advantageous / possible to use the immaterial investment's measuring and evaluation techniques for studying the quality politics return of investment?

  5. Microelectronics in LMFBR: Activities sponsored by the Commission 1979-1983

    International Nuclear Information System (INIS)

    Nordwall, H.J. de

    1986-01-01

    These studies were designed to draw attention to signal handling techniques which have become applicable to the automatic control of reactors as a result of advances in microelectronics. The underlying concepts being explored are the extent to which more information may be obtained from existing sensors, whether changes in the state of a system may be acted upon automatically and the acceptability of stochastic methods of state estimation. If a given state may arise in a number of different ways, automatic action necessarily involves diagnosis of causes if any but the simplest actions, e.g. scram, is required. Up to now this diagnosis has been made by an operator, though a number of schemes intended to identify the primary cause of an abnormal state or to guide an operator to the most easily accessible safe state are in advanced states of development, e.g. at Halden, Westinghouse and GRS-Garching. The activity decribed is continuing, current emphasis being upon diagnostics using approaches based upon artificial intelligence concepts, system optimisation and quantification of the benefits of networking

  6. Femtosecond laser pulses for fast 3-D surface profilometry of microelectronic step-structures.

    Science.gov (United States)

    Joo, Woo-Deok; Kim, Seungman; Park, Jiyong; Lee, Keunwoo; Lee, Joohyung; Kim, Seungchul; Kim, Young-Jin; Kim, Seung-Woo

    2013-07-01

    Fast, precise 3-D measurement of discontinuous step-structures fabricated on microelectronic products is essential for quality assurance of semiconductor chips, flat panel displays, and photovoltaic cells. Optical surface profilers of low-coherence interferometry have long been used for the purpose, but the vertical scanning range and speed are limited by the micro-actuators available today. Besides, the lateral field-of-view extendable for a single measurement is restricted by the low spatial coherence of broadband light sources. Here, we cope with the limitations of the conventional low-coherence interferometer by exploiting unique characteristics of femtosecond laser pulses, i.e., low temporal but high spatial coherence. By scanning the pulse repetition rate with direct reference to the Rb atomic clock, step heights of ~69.6 μm are determined with a repeatability of 10.3 nm. The spatial coherence of femtosecond pulses provides a large field-of-view with superior visibility, allowing for a high volume measurement rate of ~24,000 mm3/s.

  7. C-share: Optical circuits sharing for software-defined data-centers [arXiv

    DEFF Research Database (Denmark)

    Ben-Itzhak, Yaniv; Caba, Cosmin Marius; Schour, Liran

    2016-01-01

    Integrating optical circuit switches in data-centers is an ongoing research challenge. In recent years, state-of-the-art solutions introduce hybrid packet/circuit architectures for different optical circuit switch technologies, control techniques, and traffic rerouting methods. These solutions...... are based on separated packet and circuit planes which do not have the ability to utilize an optical circuit with flows that do not arrive from or delivered to switches directly connected to the circuit’s end-points. Moreover, current SDN-based elephant flow rerouting methods require a forwarding rule...... for each flow, which raise scalability issues. In this paper, we present C-Share - a practical, scalable SDN-based circuit sharing solution for data center networks. C-Share inherently enable elephant flows to share optical circuits by exploiting a flat upper tier network topology. C-Share is based...

  8. Interrogating the topological robustness of gene regulatory circuits by randomization.

    Directory of Open Access Journals (Sweden)

    Bin Huang

    2017-03-01

    Full Text Available One of the most important roles of cells is performing their cellular tasks properly for survival. Cells usually achieve robust functionality, for example, cell-fate decision-making and signal transduction, through multiple layers of regulation involving many genes. Despite the combinatorial complexity of gene regulation, its quantitative behavior has been typically studied on the basis of experimentally verified core gene regulatory circuitry, composed of a small set of important elements. It is still unclear how such a core circuit operates in the presence of many other regulatory molecules and in a crowded and noisy cellular environment. Here we report a new computational method, named random circuit perturbation (RACIPE, for interrogating the robust dynamical behavior of a gene regulatory circuit even without accurate measurements of circuit kinetic parameters. RACIPE generates an ensemble of random kinetic models corresponding to a fixed circuit topology, and utilizes statistical tools to identify generic properties of the circuit. By applying RACIPE to simple toggle-switch-like motifs, we observed that the stable states of all models converge to experimentally observed gene state clusters even when the parameters are strongly perturbed. RACIPE was further applied to a proposed 22-gene network of the Epithelial-to-Mesenchymal Transition (EMT, from which we identified four experimentally observed gene states, including the states that are associated with two different types of hybrid Epithelial/Mesenchymal phenotypes. Our results suggest that dynamics of a gene circuit is mainly determined by its topology, not by detailed circuit parameters. Our work provides a theoretical foundation for circuit-based systems biology modeling. We anticipate RACIPE to be a powerful tool to predict and decode circuit design principles in an unbiased manner, and to quantitatively evaluate the robustness and heterogeneity of gene expression.

  9. Tunnelling conductive hybrid films of gold nanoparticles and cellulose and their applications as electrochemical electrodes

    International Nuclear Information System (INIS)

    Liu, Zhiming; Wang, Xuefeng; Wu, Wenjian; Li, Mei

    2015-01-01

    Conductive hybrid films of metal nanoparticles and polymers have practical applications in the fields of sensing, microelectronics and catalysis, etc. Herein, we present the electrochemical availability of tunnelling conductive hybrid films of gold nanoparticles (GNPs) and cellulose. The hybrid films were provided with stable tunnelling conductive properties with 12 nm GNPs of 12.7% (in weight). For the first time, the conductive hybrid films were used as substrates of electrochemical electrodes to load calmodulin (CaM) proteins for sensing of calcium cations. The electrodes of hybrid films with 20 nm GNPs of 46.7% (in weight) exhibited stable electrochemical properties, and showed significant responses to calcium cations with concentrations as low as 10 −9 M after being loaded with CaM proteins. (paper)

  10. ESD analog circuits and design

    CERN Document Server

    Voldman, Steven H

    2014-01-01

    A comprehensive and in-depth review of analog circuit layout, schematic architecture, device, power network and ESD design This book will provide a balanced overview of analog circuit design layout, analog circuit schematic development, architecture of chips, and ESD design.  It will start at an introductory level and will bring the reader right up to the state-of-the-art. Two critical design aspects for analog and power integrated circuits are combined. The first design aspect covers analog circuit design techniques to achieve the desired circuit performance. The second and main aspect pres

  11. Unstable oscillators based hyperchaotic circuit

    DEFF Research Database (Denmark)

    Murali, K.; Tamasevicius, A.; G. Mykolaitis, A.

    1999-01-01

    A simple 4th order hyperchaotic circuit with unstable oscillators is described. The circuit contains two negative impedance converters, two inductors, two capacitors, a linear resistor and a diode. The Lyapunov exponents are presented to confirm hyperchaotic nature of the oscillations in the circ...... in the circuit. The performance of the circuit is investigated by means of numerical integration of appropriate differential equations, PSPICE simulations, and hardware experiment.......A simple 4th order hyperchaotic circuit with unstable oscillators is described. The circuit contains two negative impedance converters, two inductors, two capacitors, a linear resistor and a diode. The Lyapunov exponents are presented to confirm hyperchaotic nature of the oscillations...

  12. The test of VLSI circuits

    Science.gov (United States)

    Baviere, Ph.

    Tests which have proven effective for evaluating VLSI circuits for space applications are described. It is recommended that circuits be examined after each manfacturing step to gain fast feedback on inadequacies in the production system. Data from failure modes which occur during operational lifetimes of circuits also permit redefinition of the manufacturing and quality control process to eliminate the defects identified. Other tests include determination of the operational envelope of the circuits, examination of the circuit response to controlled inputs, and the performance and functional speeds of ROM and RAM memories. Finally, it is desirable that all new circuits be designed with testing in mind.

  13. Electronic Circuit Analysis Language (ECAL)

    Science.gov (United States)

    Chenghang, C.

    1983-03-01

    The computer aided design technique is an important development in computer applications and it is an important component of computer science. The special language for electronic circuit analysis is the foundation of computer aided design or computer aided circuit analysis (abbreviated as CACD and CACA) of simulated circuits. Electronic circuit analysis language (ECAL) is a comparatively simple and easy to use circuit analysis special language which uses the FORTRAN language to carry out the explanatory executions. It is capable of conducting dc analysis, ac analysis, and transient analysis of a circuit. Futhermore, the results of the dc analysis can be used directly as the initial conditions for the ac and transient analyses.

  14. An integrated circuit switch

    Science.gov (United States)

    Bonin, E. L.

    1969-01-01

    Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

  15. Automatic sweep circuit

    International Nuclear Information System (INIS)

    Keefe, D.J.

    1980-01-01

    An automatically sweeping circuit for searching for an evoked response in an output signal in time with respect to a trigger input is described. Digital counters are used to activate a detector at precise intervals, and monitoring is repeated for statistical accuracy. If the response is not found then a different time window is examined until the signal is found

  16. Automatic sweep circuit

    Science.gov (United States)

    Keefe, Donald J.

    1980-01-01

    An automatically sweeping circuit for searching for an evoked response in an output signal in time with respect to a trigger input. Digital counters are used to activate a detector at precise intervals, and monitoring is repeated for statistical accuracy. If the response is not found then a different time window is examined until the signal is found.

  17. "Printed-circuit" rectenna

    Science.gov (United States)

    Dickinson, R. M.

    1977-01-01

    Rectifying antenna is less bulky structure for absorbing transmitted microwave power and converting it into electrical current. Printed-circuit approach, using microstrip technology and circularly polarized antenna, makes polarization orientation unimportant and allows much smaller arrays for given performance. Innovation is particularly useful with proposed electric vehicles powered by beam microwaves.

  18. Het onzichtbare circuit

    NARCIS (Netherlands)

    Nauta, Bram

    2013-01-01

    De chip, of geïntegreerde schakeling, heeft in een razend tempo ons leven ingrijpend veranderd. Het lijkt zo vanzelfsprekend dat er weer een nieuwe generatie smartphones, tablets of computers is. Maar dat is het niet. Prof.dr.ir. Bram Nauta, hoogleraar Integrated Circuit Design, laat in zijn rede

  19. Voltage regulating circuit

    NARCIS (Netherlands)

    2005-01-01

    A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

  20. Streaming Reduction Circuit

    NARCIS (Netherlands)

    Gerards, Marco Egbertus Theodorus; Kuper, Jan; Kokkeler, Andre B.J.; Molenkamp, Egbert

    2009-01-01

    Reduction circuits are used to reduce rows of floating point values to single values. Binary floating point operators often have deep pipelines, which may cause hazards when many consecutive rows have to be reduced. We present an algorithm by which any number of consecutive rows of arbitrary lengths

  1. A Magnetic Circuit Demonstration.

    Science.gov (United States)

    Vanderkooy, John; Lowe, June

    1995-01-01

    Presents a demonstration designed to illustrate Faraday's, Ampere's, and Lenz's laws and to reinforce the concepts through the analysis of a two-loop magnetic circuit. Can be made dramatic and challenging for sophisticated students but is suitable for an introductory course in electricity and magnetism. (JRH)

  2. Hybrid quantum computation

    International Nuclear Information System (INIS)

    Sehrawat, Arun; Englert, Berthold-Georg; Zemann, Daniel

    2011-01-01

    We present a hybrid model of the unitary-evolution-based quantum computation model and the measurement-based quantum computation model. In the hybrid model, part of a quantum circuit is simulated by unitary evolution and the rest by measurements on star graph states, thereby combining the advantages of the two standard quantum computation models. In the hybrid model, a complicated unitary gate under simulation is decomposed in terms of a sequence of single-qubit operations, the controlled-z gates, and multiqubit rotations around the z axis. Every single-qubit and the controlled-z gate are realized by a respective unitary evolution, and every multiqubit rotation is executed by a single measurement on a required star graph state. The classical information processing in our model requires only an information flow vector and propagation matrices. We provide the implementation of multicontrol gates in the hybrid model. They are very useful for implementing Grover's search algorithm, which is studied as an illustrative example.

  3. The LMT circuit and SPICE

    DEFF Research Database (Denmark)

    Lindberg, Erik; Murali, K.; Tamacevicius, Arunas

    2006-01-01

    The state equations of the LMT circuit are modeled as a dedicated analogue computer circuit and solved by means of PSpice. The nonlinear part of the system is studied. Problems with the PSpice program are presented....

  4. Resistor Combinations for Parallel Circuits.

    Science.gov (United States)

    McTernan, James P.

    1978-01-01

    To help simplify both teaching and learning of parallel circuits, a high school electricity/electronics teacher presents and illustrates the use of tables of values for parallel resistive circuits in which total resistances are whole numbers. (MF)

  5. Detecting short circuits during assembly

    Science.gov (United States)

    Deboo, G. J.

    1980-01-01

    Detector circuit identifies shorts between bus bars of electronic equipment being wired. Detector sounds alarm and indicates which planes are shorted. Power and ground bus bars are scanned continuously until short circuit occurs.

  6. BR-5 primary circuit decontamination

    International Nuclear Information System (INIS)

    Efimov, I.A.; Nikulin, M.P.; Smirnov-Averin, A.P.; Tymosh, B.S.; Shereshkov, V.S.

    1976-01-01

    Results and methodology of steam-water and acid decontamination of the primary coolant circuit SBR-5 reactor in 1971 are discussed. Regeneration process in a cold trap of the primary coolant circuit is discussed

  7. Developing magnonic architectures in circuit QED

    Science.gov (United States)

    Karenowska, Alexy; van Loo, Arjan; Morris, Richard; Kosen, Sandoko

    The development of low-temperature experiments aimed at exploring and exploiting magnonic systems at the quantum level is rapidly becoming a highly active and innovative area of microwave magnetics research. Magnons are easily excited over the microwave frequency range typical of established solid-state quantum circuit technology, and couple readily to electromagnetic fields. These facts, in combination with the highly tunable dispersion of the excitations, make them a particularly interesting proposition in the context of quantum device design. In this talk, we survey recent progress made in our group in the area of the hybridization of planar superconducting circuit technology (circuit-QED) with magnon systems. We discuss the technical requirements of successful experiments, including the choice of suitable materials. We go on to describe the results of investigations including the study spin-wave propagation in magnetic waveguides at the single magnon level, the investigation of magnon modes in spherical magnetic resonators, and the development of systems incorporating Josephson-junction based qubits. The authors would like to acknowledge funding by the EPSRC through Grant EP/K032690/1.

  8. MOS voltage automatic tuning circuit

    OpenAIRE

    李, 田茂; 中田, 辰則; 松本, 寛樹

    2004-01-01

    Abstract ###Automatic tuning circuit adjusts frequency performance to compensate for the process variation. Phase locked ###loop (PLL) is a suitable oscillator for the integrated circuit. It is a feedback system that compares the input ###phase with the output phase. It can make the output frequency equal to the input frequency. In this paper, PLL ###fomed of MOSFET's is presented.The presented circuit consists of XOR circuit, Low-pass filter and Relaxation ###Oscillator. On PSPICE simulation...

  9. Behavioral synthesis of asynchronous circuits

    DEFF Research Database (Denmark)

    Nielsen, Sune Fallgaard

    2005-01-01

    This thesis presents a method for behavioral synthesis of asynchronous circuits, which aims at providing a synthesis flow which uses and tranfers methods from synchronous circuits to asynchronous circuits. We move the synchronous behavioral synthesis abstraction into the asynchronous handshake...... is idle. This reduces unnecessary switching activity in the individual functional units and therefore the energy consumption of the entire circuit. A collection of behavioral synthesis algorithms have been developed allowing the designer to perform time and power constrained design space exploration...

  10. Selected collection of circuit drawings

    International Nuclear Information System (INIS)

    1977-01-01

    The many electronics circuits have been constracted in the Electronics Shop for use in nuclear experiments or other purposes of this Institute. The types of these circuits amount to about 500 items in total since 1968. This report describes the electronics circuit diagrams selected from this collection. The circuit details are not presented in this report, because these are already been published in the other technical reports. (auth.)

  11. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  12. Spoked-ring microcavities: enabling seamless integration of nanophotonics in unmodified advanced CMOS microelectronics chips

    Science.gov (United States)

    Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.

    2014-03-01

    We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.

  13. PV power system using hybrid converter for LED indictor applications

    International Nuclear Information System (INIS)

    Tseng, Sheng-Yu; Wang, Hung-Yuan; Chen, Chien-Chih

    2013-01-01

    Highlights: • This paper presents a LED indictor driving circuit with a PV arrays as its power source. • The perturb-and-observe method is adopted to extract the maximum power of PV arrays. • The proposed circuit structure has a less component counts and higher conversion efficiency. • A prototype of LED indictor driving circuit has been implemented to verify its feasibility. • The proposed hybrid converter is suitable for LED inductor applications. - Abstract: This paper presents a LED indictor driving circuit with a PV arrays as its power source. The LED indictor driving circuit includes battery charger and discharger (LED driving circuit). In this research, buck converter is used as a charger, and forward converter with active clamp circuit is adopted as a discharger to drive the LED indictor. Their circuit structures use switch integration technique to simplify them and to form the proposed hybrid converter, which has a less component counts, lighter weight, smaller size, and higher conversion efficiency. Moreover, the proposed hybrid converter uses a perturb-and-observe method to extract the maximum power from PV arrays. Finally, a prototype of an LED indictor driving circuit with output voltage of 10 V and output power of 20 W has been implemented to verify its feasibility. It is suitable for the LED inductor applications

  14. Analysis of Bernstein's factorization circuit

    NARCIS (Netherlands)

    Lenstra, A.K.; Shamir, A.; Tomlinson, J.; Tromer, E.; Zheng, Y.

    2002-01-01

    In [1], Bernstein proposed a circuit-based implementation of the matrix step of the number field sieve factorization algorithm. These circuits offer an asymptotic cost reduction under the measure "construction cost x run time". We evaluate the cost of these circuits, in agreement with [1], but argue

  15. High voltage MOSFET switching circuit

    Science.gov (United States)

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  16. Neuromorphic Silicon Neuron Circuits

    Science.gov (United States)

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  17. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  18. Integrated circuit structure

    International Nuclear Information System (INIS)

    1981-01-01

    The invention describes the fabrication of integrated circuit structures, such as read-only memory components of field-effect transistors, which may be fabricated and then maintained in inventory, and later selectively modified in accordance with a desired pattern. It is claimed that MOS depletion-mode devices in accordance with the invention can be fabricated at lower cost and at higher yields. (U.K.)

  19. Integrated Circuit Immunity

    Science.gov (United States)

    Sketoe, J. G.; Clark, Anthony

    2000-01-01

    This paper presents a DOD E3 program overview on integrated circuit immunity. The topics include: 1) EMI Immunity Testing; 2) Threshold Definition; 3) Bias Tee Function; 4) Bias Tee Calibration Set-Up; 5) EDM Test Figure; 6) EMI Immunity Levels; 7) NAND vs. and Gate Immunity; 8) TTL vs. LS Immunity Levels; 9) TP vs. OC Immunity Levels; 10) 7805 Volt Reg Immunity; and 11) Seventies Chip Set. This paper is presented in viewgraph form.

  20. Integrated coincidence circuits

    International Nuclear Information System (INIS)

    Borejko, V.F.; Grebenyuk, V.M.; Zinov, V.G.

    1976-01-01

    The description is given of two coincidence units employing integral circuits in the VISHNYA standard. The units are distinguished for the coincidence selection element which is essentially a combination of a tunnel diode and microcircuits. The output fast response of the units is at least 90 MHz in the mode of the output signal unshaped in duration and 50 MHz minimum in the mode of the output signal shaping. The resolution time of the units is dependent upon the duration of input signals

  1. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  2. A hybrid approach to nanoelectronics

    Science.gov (United States)

    Cerofolini, G. F.; Arena, G.; Camalleri, C. M.; Galati, C.; Reina, S.; Renna, L.; Mascolo, D.

    2005-08-01

    The definition of features on the nanometre length scale (NLS) is impossible via conventional lithography, but can be done using extreme ultraviolet, synchrotron-radiation, or electron beam lithography. However, since these techniques are very expensive and still in their infancy, their exploitation in integrated circuit (IC) processing is still highly putative. Geometries on the NLS can however be produced with relative ease using the spacer patterning technique, i.e. transforming vertical features (like film thickness) in the vicinity of a step of a sacrificial layer into horizontal features. The ultimate length that can be produced in this way is controlled by the steepness of the step defining the sacrificial layer, the uniformity of the deposited or grown films, and the anisotropy of its etching. While useful for the preparation of a few devices with special needs, the above trick does not allow by itself the development of a nanotechnology where each layer useful for defining the circuit should be on the NLS and aligned on the underlying geometries with tolerances on the NLS. Setting up such a nanotechnology is a major problem which will involve the IC industry in the post-Roadmap era. Irrespective of the detailed structure of the basic constituents (molecules, supramolecular structures, clusters, etc), ICs with nanoscopic active elements can hardly be prepared without the ability to produce arrays of conductive strips with pitch on the NLS. This work is devoted to describing a scheme (essentially based on the existing microelectronic technology) for their production without the use of advanced lithography and how it can be arranged to host molecular devices.

  3. Interface Circuit For Printer Port

    Science.gov (United States)

    Tucker, Jerry H.; Yadlowsky, Ann B.

    1991-01-01

    Electronic circuit, called printer-port interface circuit (PPI) developed to overcome certain disadvantages of previous methods for connecting IBM PC or PC-compatible computer to other equipment. Has both reading and writing modes of operation. Very simple, requiring only six integrated circuits. Provides for moderately fast rates of transfer of data and uses existing unmodified circuit card in IBM PC. When used with appropriate software, circuit converts printer port on IBM PC, XT, AT, or compatible personal computer to general purpose, 8-bit-data, 16-bit address bus that connects to multitude of devices.

  4. Changes to the shuttle circuits

    CERN Multimedia

    GS Department

    2011-01-01

    To fit with passengers expectation, there will be some changes to the shuttle circuits as from Monday 10 October. See details on http://cern.ch/ShuttleService (on line on 7 October). Circuit No. 5 is cancelled as circuit No. 1 also stops at Bldg. 33. In order to guarantee shorter travel times, circuit No. 1 will circulate on Meyrin site only and circuit No. 2, with departures from Bldg. 33 and 500, on Prévessin site only. Site Services Section

  5. Thermionic integrated circuits: electronics for hostile environments

    International Nuclear Information System (INIS)

    Lynn, D.K.; McCormick, J.B.; MacRoberts, M.D.J.; Wilde, D.K.; Dooley, G.R.; Brown, D.R.

    1985-01-01

    Thermionic integrated circuits combine vacuum tube technology with integrated circuit techniques to form integrated vacuum triode circuits. These circuits are capable of extended operation in both high-temperature and high-radiation environments

  6. Power system with an integrated lubrication circuit

    Science.gov (United States)

    Hoff, Brian D [East Peoria, IL; Akasam, Sivaprasad [Peoria, IL; Algrain, Marcelo C [Peoria, IL; Johnson, Kris W [Washington, IL; Lane, William H [Chillicothe, IL

    2009-11-10

    A power system includes an engine having a first lubrication circuit and at least one auxiliary power unit having a second lubrication circuit. The first lubrication circuit is in fluid communication with the second lubrication circuit.

  7. Integrated coherent matter wave circuits

    International Nuclear Information System (INIS)

    Ryu, C.; Boshier, M. G.

    2015-01-01

    An integrated coherent matter wave circuit is a single device, analogous to an integrated optical circuit, in which coherent de Broglie waves are created and then launched into waveguides where they can be switched, divided, recombined, and detected as they propagate. Applications of such circuits include guided atom interferometers, atomtronic circuits, and precisely controlled delivery of atoms. We report experiments demonstrating integrated circuits for guided coherent matter waves. The circuit elements are created with the painted potential technique, a form of time-averaged optical dipole potential in which a rapidly moving, tightly focused laser beam exerts forces on atoms through their electric polarizability. Moreover, the source of coherent matter waves is a Bose-Einstein condensate (BEC). Finally, we launch BECs into painted waveguides that guide them around bends and form switches, phase coherent beamsplitters, and closed circuits. These are the basic elements that are needed to engineer arbitrarily complex matter wave circuitry

  8. A high-precision synchronization circuit for clock distribution

    International Nuclear Information System (INIS)

    Lu Chong; Tan Hongzhou; Duan Zhikui; Ding Yi

    2015-01-01

    In this paper, a novel structure of a high-precision synchronization circuit, HPSC, using interleaved delay units and a dynamic compensation circuit is proposed. HPSCs are designed for synchronization of clock distribution networks in large-scale integrated circuits, where high-quality clocks are required. The application of a hybrid structure of a coarse delay line and dynamic compensation circuit performs roughly the alignment of the clock signal in two clock cycles, and finishes the fine tuning in the next three clock cycles with the phase error suppressed under 3.8 ps. The proposed circuit is implemented and fabricated using a SMIC 0.13 μm 1P6M process with a supply voltage at 1.2 V. The allowed operation frequency ranges from 200 to 800 MHz, and the duty cycle ranges between [20%, 80%]. The active area of the core circuits is 245 × 134 μm 2 , and the power consumption is 1.64 mW at 500 MHz. (paper)

  9. Estimation of the LET threshold of single event upset of microelectronics in experiments with Cf-252

    International Nuclear Information System (INIS)

    Kuznetsov, N.V.; Nymmik, R.A.

    1996-01-01

    A method is proposed for analyzing single event upsets (SEU) in large scale integration circuits of random access memory (RAM) when exposed to Cf-252 fission fragments. The method makes is possible to find the RAM linear energy transfer (LET) threshold to be used for estimations of RAM SEU rates in space. The method is illustrated by analyzing experimental data for the 2 x 8 kbit CMOS/bulk RAM. (author)

  10. Advances in research and development modeling of film deposition for microelectronic applications

    CERN Document Server

    Francombe, Maurice H

    1997-01-01

    Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.

  11. High-speed high-efficiency 500-W cw CO2 laser hermetization of metal frames of microelectronics devices

    Science.gov (United States)

    Levin, Andrey V.

    1996-04-01

    High-speed, efficient method of laser surface treatment has been developed using (500 W) cw CO2 laser. The principal advantages of CO2 laser surface treatment in comparison with solid state lasers are the basis of the method. It has been affirmed that high efficiency of welding was a consequence of the fundamental properties of metal-IR-radiation (10,6 mkm) interaction. CO2 laser hermetization of metal frames of microelectronic devices is described as an example of the proposed method application.

  12. Dynamic pulse difference circuit

    International Nuclear Information System (INIS)

    Erickson, G.L.

    1978-01-01

    A digital electronic circuit of especial use for subtracting background activity pulses in gamma spectrometry is disclosed which comprises an up-down counter connected to count up with signal-channel pulses and to count down with background-channel pulses. A detector responsive to the count position of the up-down counter provides a signal when the up-down counter has completed one scaling sequence cycle of counts in the up direction. In an alternate embodiment, a detector responsive to the count position of the up-down counter provides a signal upon overflow of the counter

  13. Electronics circuits and systems

    CERN Document Server

    Bishop, Owen

    2007-01-01

    The material in Electronics - Circuits and Systems is a truly up-to-date textbook, with coverage carefully matched to the electronics units of the 2007 BTEC National Engineering and the latest AS and A Level specifications in Electronics from AQA, OCR and WJEC. The material has been organized with a logical learning progression, making it ideal for a wide range of pre-degree courses in electronics. The approach is student-centred and includes: numerous examples and activities; web research topics; Self Test features, highlighted key facts, formulae and definitions. Each chapter ends with a set

  14. Electric circuits problem solver

    CERN Document Server

    REA, Editors of

    2012-01-01

    Each Problem Solver is an insightful and essential study and solution guide chock-full of clear, concise problem-solving gems. All your questions can be found in one convenient source from one of the most trusted names in reference solution guides. More useful, more practical, and more informative, these study aids are the best review books and textbook companions available. Nothing remotely as comprehensive or as helpful exists in their subject anywhere. Perfect for undergraduate and graduate studies.Here in this highly useful reference is the finest overview of electric circuits currently av

  15. Digital logic circuit test

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Gil Jung; Yang, Hong Young

    2011-03-15

    This book is about digital logic circuit test, which lists the digital basic theory, basic gate like and, or And Not gate, NAND/NOR gate such as NAND gate, NOR gate, AND and OR, logic function, EX-OR gate, adder and subtractor, decoder and encoder, multiplexer, demultiplexer, flip-flop, counter such as up/down counter modulus N counter and Reset type counter, shift register, D/A and A/D converter and two supplements list of using components and TTL manual and CMOS manual.

  16. Photonic Integrated Circuits

    Science.gov (United States)

    Krainak, Michael; Merritt, Scott

    2016-01-01

    Integrated photonics generally is the integration of multiple lithographically defined photonic and electronic components and devices (e.g. lasers, detectors, waveguides passive structures, modulators, electronic control and optical interconnects) on a single platform with nanometer-scale feature sizes. The development of photonic integrated circuits permits size, weight, power and cost reductions for spacecraft microprocessors, optical communication, processor buses, advanced data processing, and integrated optic science instrument optical systems, subsystems and components. This is particularly critical for small spacecraft platforms. We will give an overview of some NASA applications for integrated photonics.

  17. Integrated circuit cell library

    Science.gov (United States)

    Whitaker, Sterling R. (Inventor); Miles, Lowell H. (Inventor)

    2005-01-01

    According to the invention, an ASIC cell library for use in creation of custom integrated circuits is disclosed. The ASIC cell library includes some first cells and some second cells. Each of the second cells includes two or more kernel cells. The ASIC cell library is at least 5% comprised of second cells. In various embodiments, the ASIC cell library could be 10% or more, 20% or more, 30% or more, 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, or 95% or more comprised of second cells.

  18. Nano integrated circuit process

    International Nuclear Information System (INIS)

    Yoon, Yung Sup

    2004-02-01

    This book contains nine chapters, which are introduction of manufacture of semiconductor chip, oxidation such as Dry-oxidation, wet oxidation, oxidation model and oxide film, diffusion like diffusion process, diffusion equation, diffusion coefficient and diffusion system, ion implantation, including ion distribution, channeling, multiimplantation and masking and its system, sputtering such as CVD and PVD, lithography, wet etch and dry etch, interconnection and flattening like metal-silicon connection, silicide, multiple layer metal process and flattening, an integrated circuit process, including MOSFET and CMOS.

  19. Electronic logic circuits

    CERN Document Server

    Gibson, J

    2013-01-01

    Most branches of organizing utilize digital electronic systems. This book introduces the design of such systems using basic logic elements as the components. The material is presented in a straightforward manner suitable for students of electronic engineering and computer science. The book is also of use to engineers in related disciplines who require a clear introduction to logic circuits. This third edition has been revised to encompass the most recent advances in technology as well as the latest trends in components and notation. It includes a wide coverage of application specific integrate

  20. Linear integrated circuits

    CERN Document Server

    Carr, Joseph

    1996-01-01

    The linear IC market is large and growing, as is the demand for well trained technicians and engineers who understand how these devices work and how to apply them. Linear Integrated Circuits provides in-depth coverage of the devices and their operation, but not at the expense of practical applications in which linear devices figure prominently. This book is written for a wide readership from FE and first degree students, to hobbyists and professionals.Chapter 1 offers a general introduction that will provide students with the foundations of linear IC technology. From chapter 2 onwa

  1. Nano integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Yung Sup

    2004-02-15

    This book contains nine chapters, which are introduction of manufacture of semiconductor chip, oxidation such as Dry-oxidation, wet oxidation, oxidation model and oxide film, diffusion like diffusion process, diffusion equation, diffusion coefficient and diffusion system, ion implantation, including ion distribution, channeling, multiimplantation and masking and its system, sputtering such as CVD and PVD, lithography, wet etch and dry etch, interconnection and flattening like metal-silicon connection, silicide, multiple layer metal process and flattening, an integrated circuit process, including MOSFET and CMOS.

  2. Electronics circuits and systems

    CERN Document Server

    Bishop, Owen

    2011-01-01

    The material in Electronics - Circuits and Systems is a truly up-to-date textbook, with coverage carefully matched to the electronics units of the 2007 BTEC National Engineering and the latest AS and A Level specifications in Electronics from AQA, OCR and WJEC. The material has been organized with a logical learning progression, making it ideal for a wide range of pre-degree courses in electronics. The approach is student-centred and includes: numerous examples and activities; web research topics; Self Test features, highlighted key facts, formulae and definitions. Ea

  3. Optoelectronics circuits manual

    CERN Document Server

    Marston, R M

    1999-01-01

    This manual is a useful single-volume guide specifically aimed at the practical design engineer, technician, and experimenter, as well as the electronics student and amateur. It deals with the subject in an easy to read, down to earth, and non-mathematical yet comprehensive manner, explaining the basic principles and characteristics of the best known devices, and presenting the reader with many practical applications and over 200 circuits. Most of the ICs and other devices used are inexpensive and readily available types, with universally recognised type numbers.The second edition

  4. Optically controllable molecular logic circuits

    International Nuclear Information System (INIS)

    Nishimura, Takahiro; Fujii, Ryo; Ogura, Yusuke; Tanida, Jun

    2015-01-01

    Molecular logic circuits represent a promising technology for observation and manipulation of biological systems at the molecular level. However, the implementation of molecular logic circuits for temporal and programmable operation remains challenging. In this paper, we demonstrate an optically controllable logic circuit that uses fluorescence resonance energy transfer (FRET) for signaling. The FRET-based signaling process is modulated by both molecular and optical inputs. Based on the distance dependence of FRET, the FRET pathways required to execute molecular logic operations are formed on a DNA nanostructure as a circuit based on its molecular inputs. In addition, the FRET pathways on the DNA nanostructure are controlled optically, using photoswitching fluorescent molecules to instruct the execution of the desired operation and the related timings. The behavior of the circuit can thus be controlled using external optical signals. As an example, a molecular logic circuit capable of executing two different logic operations was studied. The circuit contains functional DNAs and a DNA scaffold to construct two FRET routes for executing Input 1 AND Input 2 and Input 1 AND NOT Input 3 operations on molecular inputs. The circuit produced the correct outputs with all possible combinations of the inputs by following the light signals. Moreover, the operation execution timings were controlled based on light irradiation and the circuit responded to time-dependent inputs. The experimental results demonstrate that the circuit changes the output for the required operations following the input of temporal light signals

  5. Tomography of integrated circuit interconnect with an electromigration void

    Energy Technology Data Exchange (ETDEWEB)

    Levine, Zachary H. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States); Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States); Kalukin, Andrew R. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States); Kuhn, Markus [Intel Corporation RA1-329, 5200 Northeast Elam Young Parkway, Hillsboro, Oregon 74124 (United States); Frigo, Sean P. [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); McNulty, Ian [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Retsch, Cornelia C. [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Wang, Yuxin [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Arp, Uwe [National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States); Lucatorto, Thomas B. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States); Ravel, Bruce D. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States)] (and others)

    2000-05-01

    An integrated circuit interconnect was subject to accelerated-life test conditions to induce an electromigration void. The silicon substrate was removed, leaving only the interconnect test structure encased in silica. We imaged the sample with 1750 eV photons using the 2-ID-B scanning transmission x-ray microscope at the Advanced Photon Source, a third-generation synchrotron facility. Fourteen views through the sample were obtained over a 170 degree sign range of angles (with a 40 degree sign gap) about a single rotation axis. Two sampled regions were selected for three-dimensional reconstruction: one of the ragged end of a wire depleted by the void, the other of the adjacent interlevel connection (or ''via''). We applied two reconstruction techniques: the simultaneous iterative reconstruction technique and a Bayesian reconstruction technique, the generalized Gaussian Markov random field method. The stated uncertainties are total, with one standard deviation, which resolved the sample to 200{+-}70 and 140{+-}30 nm, respectively. The tungsten via is distinguished from the aluminum wire by higher absorption. Within the void, the aluminum is entirely depleted from under the tungsten via. The reconstructed data show the applicability of this technique to three-dimensional imaging of buried defects in submicrometer structures relevant to the microelectronics industry. (c) 2000 American Institute of Physics.

  6. Sequential circuit design for radiation hardened multiple voltage integrated circuits

    Science.gov (United States)

    Clark, Lawrence T [Phoenix, AZ; McIver, III, John K.

    2009-11-24

    The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

  7. Single Day Construction of Multigene Circuits with 3G Assembly.

    Science.gov (United States)

    Halleran, Andrew D; Swaminathan, Anandh; Murray, Richard M

    2018-05-18

    The ability to rapidly design, build, and test prototypes is of key importance to every engineering discipline. DNA assembly often serves as a rate limiting step of the prototyping cycle for synthetic biology. Recently developed DNA assembly methods such as isothermal assembly and type IIS restriction enzyme systems take different approaches to accelerate DNA construction. We introduce a hybrid method, Golden Gate-Gibson (3G), that takes advantage of modular part libraries introduced by type IIS restriction enzyme systems and isothermal assembly's ability to build large DNA constructs in single pot reactions. Our method is highly efficient and rapid, facilitating construction of entire multigene circuits in a single day. Additionally, 3G allows generation of variant libraries enabling efficient screening of different possible circuit constructions. We characterize the efficiency and accuracy of 3G assembly for various construct sizes, and demonstrate 3G by characterizing variants of an inducible cell-lysis circuit.

  8. Direct Desktop Printed-Circuits-on-Paper Flexible Electronics

    Science.gov (United States)

    Zheng, Yi; He, Zhizhu; Gao, Yunxia; Liu, Jing

    2013-01-01

    There currently lacks of a way to directly write out electronics, just like printing pictures on paper by an office printer. Here we show a desktop printing of flexible circuits on paper via developing liquid metal ink and related working mechanisms. Through modifying adhesion of the ink, overcoming its high surface tension by dispensing machine and designing a brush like porous pinhead for printing alloy and identifying matched substrate materials among different papers, the slightly oxidized alloy ink was demonstrated to be flexibly printed on coated paper, which could compose various functional electronics and the concept of Printed-Circuits-on-Paper was thus presented. Further, RTV silicone rubber was adopted as isolating inks and packaging material to guarantee the functional stability of the circuit, which suggests an approach for printing 3D hybrid electro-mechanical device. The present work paved the way for a low cost and easygoing method in directly printing paper electronics.

  9. Intermetallic compounds in 3D integrated circuits technology: a brief review

    Science.gov (United States)

    Annuar, Syahira; Mahmoodian, Reza; Hamdi, Mohd; Tu, King-Ning

    2017-12-01

    The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

  10. Intermetallic compounds in 3D integrated circuits technology: a brief review.

    Science.gov (United States)

    Annuar, Syahira; Mahmoodian, Reza; Hamdi, Mohd; Tu, King-Ning

    2017-01-01

    The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

  11. EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS

    Directory of Open Access Journals (Sweden)

    S. A. Chizhik

    2013-01-01

    Full Text Available The advantages of using an atomic force microscopy in manufacturing of submicron integrated circuits are described. The possibilities of characterizing the surface morphology and the etching profile for silicon substrate and bus lines, estimation of the periodicity and size of bus lines, geometrical stability for elementary bus line are shown. Methods of optical and atomic force microcopies are combined in one diagnostic unit. Scanning  probe  microscope  (SPM  200  is  designed  and  produced.  Complex  SPM  200  realizes  nondestructive control of microelectronics elements made on silicon wafers up to 200 mm in diameter and it is introduced by JSC «Integral» for the purpose of operational control, metrology and acceptance of the final product.

  12. Electromigration in integrated circuit interconnects studied by X-ray microscopy

    CERN Document Server

    Schneider, G; Anderson, E; Bates, W; Salmassi, F; Nachimuthu, P; Pearson, A; Richardson, D; Hambach, D; Hoffmann, N; Hasse, W; Hoffmann, K

    2003-01-01

    To study mass transport phenomena in advanced microelectronic devices with X-rays requires penetration of dielectric and Si layers up to 30 mu m thick. X-ray imaging at 1.8 keV photon energy provides a high amplitude contrast between Cu or Al interconnects and dielectric layers and can penetrate through the required thickness. To perform X-ray microscopy at 1.8 keV, a new Ru/Si multilayer was designed for the transmission X-ray microscope XM-1 installed at the Advanced Light Source in Berkeley. The mass flow in a passivated Cu interconnect was studied at current densities up to 10 sup 7 A/cm sup 2. In addition, we demonstrated the high material contrast from different elements in integrated circuits with a resolution of about 40 nm.

  13. Electromigration in integrated circuit interconnects studied by X-ray microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, G. E-mail: gschnei1@gwdg.de; Denbeaux, G.; Anderson, E.; Bates, W.; Salmassi, F.; Nachimuthu, P.; Pearson, A.; Richardson, D.; Hambach, D.; Hoffmann, N.; Hasse, W.; Hoffmann, K

    2003-01-01

    To study mass transport phenomena in advanced microelectronic devices with X-rays requires penetration of dielectric and Si layers up to 30 {mu}m thick. X-ray imaging at 1.8 keV photon energy provides a high amplitude contrast between Cu or Al interconnects and dielectric layers and can penetrate through the required thickness. To perform X-ray microscopy at 1.8 keV, a new Ru/Si multilayer was designed for the transmission X-ray microscope XM-1 installed at the Advanced Light Source in Berkeley. The mass flow in a passivated Cu interconnect was studied at current densities up to 10{sup 7} A/cm{sup 2}. In addition, we demonstrated the high material contrast from different elements in integrated circuits with a resolution of about 40 nm.

  14. Hybrid reactors

    International Nuclear Information System (INIS)

    Moir, R.W.

    1980-01-01

    The rationale for hybrid fusion-fission reactors is the production of fissile fuel for fission reactors. A new class of reactor, the fission-suppressed hybrid promises unusually good safety features as well as the ability to support 25 light-water reactors of the same nuclear power rating, or even more high-conversion-ratio reactors such as the heavy-water type. One 4000-MW nuclear hybrid can produce 7200 kg of 233 U per year. To obtain good economics, injector efficiency times plasma gain (eta/sub i/Q) should be greater than 2, the wall load should be greater than 1 MW.m -2 , and the hybrid should cost less than 6 times the cost of a light-water reactor. Introduction rates for the fission-suppressed hybrid are usually rapid

  15. Properties of zirconium silicate and zirconium-silicon oxynitride high-k dielectric alloys for advanced microelectronic applications: Chemical and electrical characterizations

    Science.gov (United States)

    Ju, Byongsun

    2005-11-01

    As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase packing density of ultra-large scale integrated circuits (ULSI). High-k alternative dielectrics can provide the required levels of EOT for device scaling at larger physical thickness, thereby providing a materials pathway for reducing the tunneling current. Zr silicates and its end members (SiO2 and ZrO2) and Zr-Si oxynitride films, (ZrO2)x(Si3N 4)y(SiO2)z, have been deposited using a remote plasma-enhanced chemical vapor deposition (RPECVD) system. After deposition of Zr silicate, the films were exposed to He/N2 plasma to incorporate nitrogen atoms into the surface of films. The amount of incorporated nitrogen atoms was measured by on-line Auger electron spectrometry (AES) as a function of silicate composition and showed its local minimum around the 30% silicate. The effect of nitrogen atoms on capacitance-voltage (C-V) and leakage-voltage (J-V) were also investigated by fabricating metal-oxide-semiconductor (MOS) capacitors. Results suggested that incorporating nitrogen into silicate decreased the leakage current in SiO2-rich silicate, whereas the leakage increased in the middle range of silicate. Zr-Si oxynitride was a pseudo-ternary alloy and no phase separation was detected by x-ray photoelectron spectroscopy (XPS) analysis up to 1100°C annealing. The leakage current of Zr-Si oxynitride films showed two different temperature dependent activation energies, 0.02 eV for low temperature and 0.3 eV for high temperature. Poole-Frenkel emission was the dominant leakage mechanism. Zr silicate alloys with no Si3N4 phase were chemically separated into the SiO2 and ZrO2 phase as annealed above 900°C. While chemical phase separation in Zr silicate films with Si 3N4 phase (Zr-Si oxynitride) were suppressed as increasing the amount of Si3N4 phase due to the narrow bonding network m Si3

  16. Simple Cell Balance Circuit

    Science.gov (United States)

    Johnson, Steven D.; Byers, Jerry W.; Martin, James A.

    2012-01-01

    A method has been developed for continuous cell voltage balancing for rechargeable batteries (e.g. lithium ion batteries). A resistor divider chain is provided that generates a set of voltages representing the ideal cell voltage (the voltage of each cell should be as if the cells were perfectly balanced). An operational amplifier circuit with an added current buffer stage generates the ideal voltage with a very high degree of accuracy, using the concept of negative feedback. The ideal voltages are each connected to the corresponding cell through a current- limiting resistance. Over time, having the cell connected to the ideal voltage provides a balancing current that moves the cell voltage very close to that ideal level. In effect, it adjusts the current of each cell during charging, discharging, and standby periods to force the cell voltages to be equal to the ideal voltages generated by the resistor divider. The device also includes solid-state switches that disconnect the circuit from the battery so that it will not discharge the battery during storage. This solution requires relatively few parts and is, therefore, of lower cost and of increased reliability due to the fewer failure modes. Additionally, this design uses very little power. A preliminary model predicts a power usage of 0.18 W for an 8-cell battery. This approach is applicable to a wide range of battery capacities and voltages.

  17. Quantum-Circuit Refrigerator

    Science.gov (United States)

    MöTtöNen, Mikko; Tan, Kuan Y.; Masuda, Shumpei; Partanen, Matti; Lake, Russell E.; Govenius, Joonas; Silveri, Matti; Grabert, Hermann

    Quantum technology holds great potential in providing revolutionizing practical applications. However, fast and precise cooling of the functional quantum degrees of freedom on demand remains a major challenge in many solid-state implementations, such as superconducting circuits. We demonstrate direct cooling of a superconducting resonator mode using voltage-controllable quantum tunneling of electrons in a nanoscale refrigerator. In our first experiments on this type of a quantum-circuit refrigerator, we measure the drop in the mode temperature by electron thermometry at a resistor which is coupled to the resonator mode through ohmic losses. To eliminate unwanted dissipation, we remove the probe resistor and directly observe the power spectrum of the resonator output in agreement with the so-called P(E) theory. We also demonstrate in microwave reflection experiments that the internal quality factor of the resonator can be tuned by orders of magnitude. In the future, our refrigerator can be integrated with different quantum electric devices, potentially enhancing their performance. For example, it may prove useful in the initialization of superconducting quantum bits and in dissipation-assisted quantum annealing. We acknowledge European Research Council Grant SINGLEOUT (278117) and QUESS (681311) for funding.

  18. Quasi-Linear Circuit

    Science.gov (United States)

    Bradley, William; Bird, Ross; Eldred, Dennis; Zook, Jon; Knowles, Gareth

    2013-01-01

    This work involved developing spacequalifiable switch mode DC/DC power supplies that improve performance with fewer components, and result in elimination of digital components and reduction in magnetics. This design is for missions where systems may be operating under extreme conditions, especially at elevated temperature levels from 200 to 300 degC. Prior art for radiation-tolerant DC/DC converters has been accomplished utilizing classical magnetic-based switch mode converter topologies; however, this requires specific shielding and component de-rating to meet the high-reliability specifications. It requires complex measurement and feedback components, and will not enable automatic re-optimization for larger changes in voltage supply or electrical loading condition. The innovation is a switch mode DC/DC power supply that eliminates the need for processors and most magnetics. It can provide a well-regulated voltage supply with a gain of 1:100 step-up to 8:1 step down, tolerating an up to 30% fluctuation of the voltage supply parameters. The circuit incorporates a ceramic core transformer in a manner that enables it to provide a well-regulated voltage output without use of any processor components or magnetic transformers. The circuit adjusts its internal parameters to re-optimize its performance for changes in supply voltage, environmental conditions, or electrical loading at the output

  19. Arithmetic circuits for DSP applications

    CERN Document Server

    Stouraitis, Thanos

    2017-01-01

    Arithmetic Circuits for DSP Applications is a complete resource on arithmetic circuits for digital signal processing (DSP). It covers the key concepts, designs and developments of different types of arithmetic circuits, which can be used for improving the efficiency of implementation of a multitude of DSP applications. Each chapter includes various applications of the respective class of arithmetic circuits along with information on the future scope of research. Written for students, engineers, and researchers in electrical and computer engineering, this comprehensive text offers a clear understanding of different types of arithmetic circuits used for digital signal processing applications. The text includes contributions from noted researchers on a wide range of topics, including a review o circuits used in implementing basic operations like additions and multiplications; distributed arithmetic as a technique for the multiplier-less implementation of inner products for DSP applications; discussions on look ...

  20. Integrated circuit cooled turbine blade

    Science.gov (United States)

    Lee, Ching-Pang; Jiang, Nan; Um, Jae Y.; Holloman, Harry; Koester, Steven

    2017-08-29

    A turbine rotor blade includes at least two integrated cooling circuits that are formed within the blade that include a leading edge circuit having a first cavity and a second cavity and a trailing edge circuit that includes at least a third cavity located aft of the second cavity. The trailing edge circuit flows aft with at least two substantially 180-degree turns at the tip end and the root end of the blade providing at least a penultimate cavity and a last cavity. The last cavity is located along a trailing edge of the blade. A tip axial cooling channel connects to the first cavity of the leading edge circuit and the penultimate cavity of the trailing edge circuit. At least one crossover hole connects the penultimate cavity to the last cavity substantially near the tip end of the blade.

  1. Control circuit for transformer relay

    International Nuclear Information System (INIS)

    Wyatt, G.A.

    1984-01-01

    A control circuit for a transformer relay which will automatically momentarily control the transformer relay to a selected state upon energization of the control circuit. The control circuit has an energy storage element and a current director coupled in series and adapted to be coupled with the secondary winding of the transformer relay. A device for discharge is coupled across the energy storage element. The energy storage element and current director will momentarily allow a unidirectional flow of current in the secondary winding of the transformer relay upon application of energy to the control circuit. When energy is not applied to the control circuit the device for discharge will allow the energy storage element to discharge and be available for another operation of the control circuit

  2. Source-circuit design overview

    Science.gov (United States)

    Ross, R. G., Jr.

    1983-01-01

    The source circuit is the fundamental electrical building block of a large central-station array; it consists of a series-parallel network of solar cells that develops full system voltage. The array field is generally made up of a large number of parallel source circuits. Source-circuit electrical configuration is driven by a number of design considerations, which must be considered simultaneously. Array fault tolerance and hot spot heating endurance are examined in detail.

  3. Radiation-sensitive switching circuits

    Energy Technology Data Exchange (ETDEWEB)

    Moore, J.H.; Cockshott, C.P.

    1976-03-16

    A radiation-sensitive switching circuit has a light emitting diode which supplies light to a photo-transistor, the light being interrupted from time to time. When the photo-transistor is illuminated, current builds up and when this current reaches a predetermined value, a trigger circuit changes state. The peak output of the photo-transistor is measured and the trigger circuit is arranged to change state when the output of the device is a set proportion of the peak output, so as to allow for aging of the components. The circuit is designed to control the ignition system in an automobile engine.

  4. Four-junction superconducting circuit

    Science.gov (United States)

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  5. Thermal simulation of a cooling system of hybrid commercial vehicles; Thermalsimulation eine Hybrid-LKW-Kuehlsystems

    Energy Technology Data Exchange (ETDEWEB)

    Stroh, Christoph; Schnoerch, Stefan; Rathberger, Christian [Magna Powertrain Engineering Center Steyr GmbH und Co. KG, St. Valentin (Austria)

    2012-11-01

    In the past few years hybrid vehicles have been in the center of automotive engineering efforts, in particular in the field of passenger cars. But hybrid powertrains will also be important for commercial trucks. This focus on hybrid vehicles leads to high demands on thermal management since the additional components in a hybrid vehicle need appropriate cooling or even heating. In the given paper the simulation of a complete cooling system of a hybrid commercial vehicle will be explained. For this virtual examination the commercial 1D thermal management software KULI will be used, a co-simulation with several programs will not be done deliberately. Yet all aspects which are relevant for a global assessment of the thermal management are considered. The main focus is put on the investigation of appropriate concepts for the fluid circuits, including low and high temperature circuits, electric water pumps, etc. Moreover, also a refrigerant circuit with a chiller for active battery cooling will be used, the appropriate control strategy is implemented as well. For simulating transient profiles a simple driving simulation model is included, using road profile, ambient conditions, and various vehicle parameters as input. In addition an engine model is included which enables the investigation of fuel consumption potentials. This simulation model shows how the thermal management of a hybrid vehicle can be investigated with a single program and with reasonable effort. (orig.)

  6. Circuit QED with 3D cavities

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Edwar; Eder, Peter; Fischer, Michael; Goetz, Jan; Deppe, Frank; Gross, Rudolf [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Physik-Department, TU Muenchen, 85748 Garching (Germany); Nanosystems Initiative Munich (NIM), 80799 Muenchen (Germany); Haeberlein, Max; Wulschner, Karl Friedrich [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Physik-Department, TU Muenchen, 85748 Garching (Germany); Fedorov, Kirill; Marx, Achim [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany)

    2016-07-01

    In typical circuit QED systems, on-chip superconducting qubits are coupled to integrated coplanar microwave resonators. Due to the planar geometry, the resonators are often a limiting factor regarding the total coherence of the system. Alternatively, similar hybrid systems can be realized using 3D microwave cavities. Here, we present studies on transmon qubits capacitively coupled to 3D cavities. The internal quality factors of our 3D cavities, machined out of high purity aluminum, are above 1.4 .10{sup 6} at the single photon level and a temperature of 50 mK. For characterization of the sample, we perform dispersive shift measurements up to the third energy level of the qubit. We show simulations and data describing the effect of the transmon geometry on it's capacitive properties. In addition, we present progress towards an integrated quantum memory application.

  7. Circuit QED with 3D cavities

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Edwar; Baust, Alexander; Zhong, Ling; Gross, Rudolf [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Physik-Department, TU Muenchen, Garching (Germany); Nanosystems Initiative Munich (NIM), Muenchen (Germany); Anderson, Gustav; Wang, Lujun; Eder, Peter; Fischer, Michael; Goetz, Jan; Haeberlein, Max; Schwarz, Manuel; Wulschner, Karl Friedrich; Deppe, Frank; Fedorov, Kirill; Huebl, Hans; Menzel, Edwin [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Physik-Department, TU Muenchen, Garching (Germany); Marx, Achim [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany)

    2015-07-01

    In typical circuit QED systems on-chip superconducting qubits are coupled to integrated coplanar microwave resonators. Due to the planar geometry, the resonators are often a limiting factor regarding the total coherence of the system. Alternatively, similar hybrid systems can be realized using 3D microwave cavities. Here, we present design considerations for the 3D microwave cavity as well as the superconducting transmon qubit. Moreover, we show experimental data of a high purity aluminum cavity demonstrating quality factors above 1.4 .10{sup 6} at the single photon level and a temperature of 50 mK. Our experiments also demonstrate that the quality factor is less dependent on the power compared to planar resonator geometries. Furthermore, we present strategies for tuning both the cavity and the qubit individually.

  8. A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

    CERN Multimedia

    2002-01-01

    % RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

  9. Counting and integrating microelectronics development for direct conversion X-ray imaging

    International Nuclear Information System (INIS)

    Kraft, E.

    2008-02-01

    A novel signal processing concept for X-ray imaging with directly converting pixelated semiconductor sensors is presented. The novelty of this approach compared to existing concepts is the combination of charge integration and photon counting in every single pixel. Simultaneous operation of both signal processing chains extends the dynamic range beyond the limits of the individual schemes and allows determination of the mean photon energy. Medical applications such as X-ray computed tomography can benefit from this additional spectral information through improved contrast and the ability to determine the hardening of the tube spectrum due to attenuation by the scanned object. A prototype chip in 0.35-micrometer technology has been successfully tested. The pixel electronics are designed using a low-swing differential current mode logic. Key element is a configurable feedback circuit for the charge sensitive amplifier which provides continuous reset, leakage current compensation and replicates the input signal for the integrator. The thesis focusses on the electronic characterization of a second generation prototype chip and gives a detailed discussion of the circuit design. (orig.)

  10. Integrated microelectronic capacitive readout subsystem for lab-on-a-chip applications

    International Nuclear Information System (INIS)

    Spathis, Christos; Georgakopoulou, Konstantina; Petrellis, Nikos; Efstathiou, Konstantinos; Birbas, Alexios

    2014-01-01

    A mixed-signal capacitive biosensor readout system is presented with its main readout functionality embedded in an integrated circuit, compatible with complementary metal oxide semiconductor-type biosensors. The system modularity allows its usage as a consumable since it eventually leads to a system-on-chip where sensor and readout circuitry are hosted on the same die. In this work, a constant current source is used for measuring the input capacitance. Compared to most capacitive biosensor readout circuits, this method offers the convenience of adjusting both the range and the resolution, depending on the requirements dictated by the application. The chip consumes less than 5 mW of power and the die area is 0.06 mm 2 . It shows a broad input capacitance range (capable of measuring bio-capacitances from 6 pF to 9.8 nF), configurable resolution (down to 1 fF), robustness to various biological experiments and good linearity. The integrated nature of the readout system is proven to be sufficient both for one-time in situ (consumable-type) bio-measurements and its incorporation into a point-of-care system. (paper)

  11. Counting and integrating microelectronics development for direct conversion X-ray imaging

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, E.

    2008-02-15

    A novel signal processing concept for X-ray imaging with directly converting pixelated semiconductor sensors is presented. The novelty of this approach compared to existing concepts is the combination of charge integration and photon counting in every single pixel. Simultaneous operation of both signal processing chains extends the dynamic range beyond the limits of the individual schemes and allows determination of the mean photon energy. Medical applications such as X-ray computed tomography can benefit from this additional spectral information through improved contrast and the ability to determine the hardening of the tube spectrum due to attenuation by the scanned object. A prototype chip in 0.35-micrometer technology has been successfully tested. The pixel electronics are designed using a low-swing differential current mode logic. Key element is a configurable feedback circuit for the charge sensitive amplifier which provides continuous reset, leakage current compensation and replicates the input signal for the integrator. The thesis focusses on the electronic characterization of a second generation prototype chip and gives a detailed discussion of the circuit design. (orig.)

  12. Effects of atmospheric neutrons on advanced micro-electronic devices, standards and applications

    International Nuclear Information System (INIS)

    Leray, J.L.; Baggio, J.; Ferlet-Cavrois, V.; Flament, O.

    2005-01-01

    Since the 1980's, it is known that terrestrial cosmic rays, mainly reported as atmospheric neutrons, can penetrate the natural shielding of buildings, equipments and circuit package and induce soft errors in integrated circuits and breakdown of power devices. The high-energy neutron fluxes of interest, larger than 10 MeV, range between 10 particles/cm 2 /hour at sea level and 10 4 particles/cm 2 /hour at typical airplanes flight altitude of 30000 feet, with modulation due to solar flares. In the 1990's, the phenomenon has pervaded as a consequence of the road-map of electronic devices especially the down-scaling of transistor dimensions, the increase of signal bandwidth and the increase of the size of DRAM and SRAM memory, stand-alone or embedded on processors and system-on-chips. Failure-in-time and soft error rate became unacceptable. Test standards and design solutions have been proposed to maintain reliability of commercial products and improve those used in special high-reliability equipments such as avionic computers. The paper describes the atmospheric neutron flux, the effects in the main classes of devices and specific cases such as neutron induced single event upset observed in CMOS vs. CMOS/SOI and some mitigation issues. In this paper, a model called CCPM (critical cross-point model) is proposed to provide critical graphs of technology node sensitivity along the scaling trend of CMOS. (authors)

  13. Development of Drop/Shock Test in Microelectronics and Impact Dynamic Analysis for Uniform Board Response

    Science.gov (United States)

    Kallolimath, Sharan Chandrashekar

    -joints. No ring test conditions was proposed and verified for the current widely used JEDEC standard. The significance of impact loading parameters such as pulse magnitude, pulse duration, pulse shapes and board dynamic parameter such as linear hysteretic damping and dynamic stiffness were discussed. Third, Kirchhoff's plate theory by principle of minimum potential energy was adopted to develop the FEA formulation to consider the effect of material hysteretic damping for the currently used JEDEC board test and proposed no-ring response test condition. Fourth, a hexagonal symmetrical board model was proposed to address the uniform stress and strain distribution throughout the test board and identify the critical failure factors. Dynamic stress and strain of the hexagonal board model were then compared with standard JEDEC board for both standard and proposed no-ring test conditions. In general, this line of research demonstrates that advanced techniques of FEA analysis can provide useful insights concerning the optimal design of drop test in microelectronics.

  14. Memristor Circuits and Systems

    KAUST Repository

    Zidan, Mohammed A.

    2015-05-01

    Current CMOS-based technologies are facing design challenges related to the continuous scaling down of the minimum feature size, according to Moore’s law. Moreover, conventional computing architecture is no longer an effective way of fulfilling modern applications demands, such as big data analysis, pattern recognition, and vector processing. Therefore, there is an exigent need to shift to new technologies, at both the architecture and the device levels. Recently, memristor devices and structures attracted attention for being promising candidates for this job. Memristor device adds a new dimension for designing novel circuits and systems. In addition, high-density memristor-based crossbar is widely considered to be the essential element for future memory and bio-inspired computing systems. However, numerous challenges need to be addressed before the memristor genuinely replaces current memory and computing technologies, which is the motivation behind this research effort. In order to address the technology challenges, we begin by fabricating and modeling the memristor device. The devices fabricated at our local clean room enriched our understanding of the memristive phenomenon and enabled the experimental testing for our memristor-based circuits. Moreover, our proposed mathematical modeling for memristor behavior is an essential element for the theoretical circuit design stage. Designing and addressing the challenges of memristor systems with practical complexity, however, requires an extra step, which takes the form of a reliable and modular simulation platform. We, therefore, built a new simulation platform for the resistive crossbar, which can simulate realistic size arrays filled with real memory data. In addition, this simulation platform includes various crossbar nonidealities in order to obtain accurate simulation results. Consequently, we were able to address the significant challenges facing the high density memristor crossbar, as the building block for

  15. Basic electronic circuits

    CERN Document Server

    Buckley, P M

    1980-01-01

    In the past, the teaching of electricity and electronics has more often than not been carried out from a theoretical and often highly academic standpoint. Fundamentals and basic concepts have often been presented with no indication of their practical appli­ cations, and all too frequently they have been illustrated by artificially contrived laboratory experiments bearing little relationship to the outside world. The course comes in the form of fourteen fairly open-ended constructional experiments or projects. Each experiment has associated with it a construction exercise and an explanation. The basic idea behind this dual presentation is that the student can embark on each circuit following only the briefest possible instructions and that an open-ended approach is thereby not prejudiced by an initial lengthy encounter with the theory behind the project; this being a sure way to dampen enthusiasm at the outset. As the investigation progresses, questions inevitably arise. Descriptions of the phenomena encounte...

  16. ECCS control circuit

    International Nuclear Information System (INIS)

    Sato, Takashi.

    1986-01-01

    Purpose: To afford a sufficient margin to pressure vibrations upon starting of an automatic depressurization system by dispersing pressure vibration in suppression water due to the opening action of an automatic releaf valve in the automatic depressurization system thereby reducing the dynamic load exerted to the surface of the suppression walls. Constitution: Upon occurrence of loss of coolant accidents, an automatic releaf valve for automatic depressurization is opened to deliver the steams in the pressure vessel into the suppression pool. Since a plurality of automatic releaf valves have usually been disposed, if they are opened simultaneously, excess dynamic loads are exerted due to the pressure vibrations to the wall surface of the suppression pool. In this invention, a control circuit is disposed such that the opening timing for each of the automatic releaf valves is deviated upon occurrence of a driving signal for the automatic depressurization system to thereby disperse the pressure vibrations in the suppression water. (Kamimura, M.)

  17. A dishwasher for circuits

    CERN Multimedia

    Rosaria Marraffino

    2014-01-01

    You have always been told that electronic devices fear water. However, at the Surface Mount Devices (SMD) Workshop here at CERN all the electronic assemblies are cleaned with a machine that looks like a… dishwasher.   The circuit dishwasher. Credit: Clara Nellist.  If you think the image above shows a dishwasher, you wouldn’t be completely wrong. Apart from the fact that the whole pumping system and the case itself are made entirely from stainless steel and chemical resistant materials, and the fact that it washes electrical boards instead of dishes… it works exactly like a dishwasher. It’s a professional machine (mainly used in the pharmaceutical industry) designed to clean everything that can be washed with a water-based chemical soap. This type of treatment increases the lifetime of the electronic boards and therefore the LHC's reliability by preventing corrosion problems in the severe radiation and ozone environment of the LHC tunn...

  18. Modeling cortical circuits.

    Energy Technology Data Exchange (ETDEWEB)

    Rohrer, Brandon Robinson; Rothganger, Fredrick H.; Verzi, Stephen J.; Xavier, Patrick Gordon

    2010-09-01

    The neocortex is perhaps the highest region of the human brain, where audio and visual perception takes place along with many important cognitive functions. An important research goal is to describe the mechanisms implemented by the neocortex. There is an apparent regularity in the structure of the neocortex [Brodmann 1909, Mountcastle 1957] which may help simplify this task. The work reported here addresses the problem of how to describe the putative repeated units ('cortical circuits') in a manner that is easily understood and manipulated, with the long-term goal of developing a mathematical and algorithmic description of their function. The approach is to reduce each algorithm to an enhanced perceptron-like structure and describe its computation using difference equations. We organize this algorithmic processing into larger structures based on physiological observations, and implement key modeling concepts in software which runs on parallel computing hardware.

  19. Inductive circuit arrangements

    International Nuclear Information System (INIS)

    Mansfield, Peter; Coxon, R.J.

    1987-01-01

    A switched coil arrangement is connected in a bridge configuration of four switches S 1 , S 2 , S 3 and S 4 which are each shunted by diodes D 1 , D 2 , D 3 and D 4 so that current can flow in either direction through a coil L depending on the setting of the switches. A capacitor C is connected across the bridge through a switch S 5 to receive the inductive energy stored in coil L on breaking the current flow path through the coil. The electrostatic energy stored in capacitor C can then be used to supply current through the coil in the reverse direction either immediately or after a time delay. Coil L may be a superconductive coil. Losses in the circuit can be made up by a trickle charge of capacitor C from a separate supply V 2 . The device may be used in nuclear magnetic resonance imaging. (author)

  20. Artificial immune system algorithm in VLSI circuit configuration

    Science.gov (United States)

    Mansor, Mohd. Asyraf; Sathasivam, Saratha; Kasihmuddin, Mohd Shareduwan Mohd

    2017-08-01

    In artificial intelligence, the artificial immune system is a robust bio-inspired heuristic method, extensively used in solving many constraint optimization problems, anomaly detection, and pattern recognition. This paper discusses the implementation and performance of artificial immune system (AIS) algorithm integrated with Hopfield neural networks for VLSI circuit configuration based on 3-Satisfiability problems. Specifically, we emphasized on the clonal selection technique in our binary artificial immune system algorithm. We restrict our logic construction to 3-Satisfiability (3-SAT) clauses in order to outfit with the transistor configuration in VLSI circuit. The core impetus of this research is to find an ideal hybrid model to assist in the VLSI circuit configuration. In this paper, we compared the artificial immune system (AIS) algorithm (HNN-3SATAIS) with the brute force algorithm incorporated with Hopfield neural network (HNN-3SATBF). Microsoft Visual C++ 2013 was used as a platform for training, simulating and validating the performances of the proposed network. The results depict that the HNN-3SATAIS outperformed HNN-3SATBF in terms of circuit accuracy and CPU time. Thus, HNN-3SATAIS can be used to detect an early error in the VLSI circuit design.

  1. Block copolymer-nanoparticle hybrid self-assembly

    KAUST Repository

    Hoheisel, Tobias N.; Hur, Kahyun; Wiesner, Ulrich B.

    2015-01-01

    © 2014 Published by Elsevier Ltd. Polymer-inorganic hybrid materials provide exciting opportunities as they may display favorable properties from both constituents that are desired in applications including catalysis and energy conversion and storage. For the preparation of hybrid materials with well-defined morphologies, block copolymer-directed nanoparticle hybrids present a particularly promising approach. As will be described in this review, once the fundamental characteristics for successful nanostructure formation at or close to the thermodynamic equilibrium of these nanocomposites are identified, the approach can be generalized to various materials classes. In addition to the discussion of recent materials developments based on the use of AB diblock copolymers as well as ABC triblock terpolymers, this review will therefore emphasize progress in the fundamental understanding of the underlying formation mechanisms of such hybrid materials. To this end, critical experiments for, as well as theoretical progress in the description of these nanostructured block copolymer-based hybrid materials will be discussed. Rather than providing a comprehensive overview, the review will emphasize work by the Wiesner group at Cornell University, US, on block copolymer-directed nanoparticle assemblies as well as their use in first potential application areas. The results provide powerful design criteria for wet-chemical synthesis methodologies for the generation of functional nanomaterials for applications ranging from microelectronics to catalysis to energy conversion and storage.

  2. Hybrid composites

    CSIR Research Space (South Africa)

    Jacob John, Maya

    2009-04-01

    Full Text Available mixed short sisal/glass hybrid fibre reinforced low density polyethylene composites was investigated by Kalaprasad et al [25].Chemical surface modifications such as alkali, acetic anhydride, stearic acid, permanganate, maleic anhydride, silane...

  3. Compact Circuit Preprocesses Accelerometer Output

    Science.gov (United States)

    Bozeman, Richard J., Jr.

    1993-01-01

    Compact electronic circuit transfers dc power to, and preprocesses ac output of, accelerometer and associated preamplifier. Incorporated into accelerometer case during initial fabrication or retrofit onto commercial accelerometer. Made of commercial integrated circuits and other conventional components; made smaller by use of micrologic and surface-mount technology.

  4. Comminution circuits for compact itabirites

    Directory of Open Access Journals (Sweden)

    Pedro Ferreira Pinto

    Full Text Available Abstract In the beneficiation of compact Itabirites, crushing and grinding account for major operational and capital costs. As such, the study and development of comminution circuits have a fundamental importance for feasibility and optimization of compact Itabirite beneficiation. This work makes a comparison between comminution circuits for compact Itabirites from the Iron Quadrangle. The circuits developed are: a crushing and ball mill circuit (CB, a SAG mill and ball mill circuit (SAB and a single stage SAG mill circuit (SSSAG. For the SAB circuit, the use of pebble crushing is analyzed (SABC. An industrial circuit for 25 million tons of run of mine was developed for each route from tests on a pilot scale (grinding and industrial scale. The energy consumption obtained for grinding in the pilot tests was compared with that reported by Donda and Bond. The SSSAG route had the lowest energy consumption, 11.8kWh/t and the SAB route had the highest energy consumption, 15.8kWh/t. The CB and SABC routes had a similar energy consumption of 14.4 kWh/t and 14.5 kWh/t respectively.

  5. Current-mode minimax circuit

    NARCIS (Netherlands)

    Wassenaar, R.F.

    1992-01-01

    The minimum-maximum (minimax) circuit selects the minimum and maximum of two input currents. Four transistors in matched pairs are operated in the saturation region. Because the behavior of the circuit is based on matched devices and is independent of the relationship between the drain current and

  6. Short-circuit impedance measurement

    DEFF Research Database (Denmark)

    Pedersen, Knud Ole Helgesen; Nielsen, Arne Hejde; Poulsen, Niels Kjølstad

    2003-01-01

    Methods for estimating the short-circuit impedance in the power grid are investigated for various voltage levels and situations. The short-circuit impedance is measured, preferably from naturally occurring load changes in the grid, and it is shown that such a measurement system faces different...

  7. Cell short circuit, preshort signature

    Science.gov (United States)

    Lurie, C.

    1980-01-01

    Short-circuit events observed in ground test simulations of DSCS-3 battery in-orbit operations are analyzed. Voltage signatures appearing in the data preceding the short-circuit event are evaluated. The ground test simulation is briefly described along with performance during reconditioning discharges. Results suggest that a characteristic signature develops prior to a shorting event.

  8. Enhancement of Linear Circuit Program

    DEFF Research Database (Denmark)

    Gaunholt, Hans; Dabu, Mihaela; Beldiman, Octavian

    1996-01-01

    In this report a preliminary user friendly interface has been added to the LCP2 program making it possible to describe an electronic circuit by actually drawing the circuit on the screen. Component values and other options and parameters can easily be set by the aid of the interface. The interface...

  9. Hybrid intermediaries

    OpenAIRE

    Cetorelli, Nicola

    2014-01-01

    I introduce the concept of hybrid intermediaries: financial conglomerates that control a multiplicity of entity types active in the "assembly line" process of modern financial intermediation, a system that has become known as shadow banking. The complex bank holding companies of today are the best example of hybrid intermediaries, but I argue that financial firms from the "nonbank" space can just as easily evolve into conglomerates with similar organizational structure, thus acquiring the cap...

  10. Automatic circuit analysis based on mask information

    International Nuclear Information System (INIS)

    Preas, B.T.; Lindsay, B.W.; Gwyn, C.W.

    1976-01-01

    The Circuit Mask Translator (CMAT) code has been developed which converts integrated circuit mask information into a circuit schematic. Logical operations, pattern recognition, and special functions are used to identify and interconnect diodes, transistors, capacitors, and resistances. The circuit topology provided by the translator is compatible with the input required for a circuit analysis program

  11. Early works on the nuclear microprobe for microelectronics irradiation tests at the CEICI (Sevilla, Spain)

    International Nuclear Information System (INIS)

    Palomo, F.R.; Morilla, Y.; Mogollon, J.M.; Garcia-Lopez, J.; Labrador, J.A.; Aguirre, M.A.

    2011-01-01

    Particle radiation effects are a fundamental problem in the use of numerous electronic devices for space applications, which is aggravated with the technology shrinking towards smaller and smaller scales. The suitability of low-energy accelerators for irradiation testing is being considered nowadays. Moreover, the possibility to use a nuclear microprobe, with a lateral resolution of a few microns, allows us to evaluate the behavior under ion irradiation of specific elements in an electronic device. The CEICI is the new CEnter for Integrated Circuits Irradiation tests, created into the facilities at the Centro Nacional de Aceleradores (CNA) in Sevilla-Spain. We have verified that our 3 MV Tandem accelerator, typically used for ion beam characterization of materials, is also a valuable tool to perform irradiation experiments in the low LET (Linear Energy Transfer) region.

  12. Materials contamination control in the microelectronic industry; Controle de la contamination des materiaux dans l`industrie de la micro-electronique

    Energy Technology Data Exchange (ETDEWEB)

    Tardif, F

    1994-12-31

    This paper deals with many aspects of the contamination of materials in the microelectronic industry. The contamination`s control of chemicals, process gases, silicon and the survey of the ions free water`s purity are treated. (TEC). 29 figs., 7 tabs.

  13. Magnetomicrofluidics Circuits for Organizing Bioparticle Arrays

    Science.gov (United States)

    Abedini-Nassab, Roozbeh

    integrated circuits, I have built devices which are capable of organizing a precise number of cells into individually addressable array sites, similar to how a random access memory (RAM) stores electronic data. My programmable magnetic circuits allow for the organization of both cells and single-cell pairs into large arrays. Single cells can also potentially be retrieved for downstream high-throughput genomic analysis. In order to enhance the efficiency of the tool and to increase the delivery speed of the particles, I have also developed microfluidics systems that are combined with the magnetophoretic circuits. This hybrid system, called magnetomicrofluidics, is capable of rapidly organizing an array of particles and cells with the high precision and control. I have also shown that cells can be grown inside these chips for multiple days, enabling the long-term phenotypic analysis of rare cellular events. These types of studies can reveal important insights about the intercellular signaling networks and answer crucial questions in biology and immunology.

  14. Nuclear data relevant to single-event upsets (SEU) in microelectronics and their application to SEU simulation

    International Nuclear Information System (INIS)

    Watanabe, Yukinobu; Tukamoto, Yasuyuki; Kodama, Akihiro; Nakashima, Hideki

    2004-01-01

    A cross-section database for neutron-induced reactions on 28 Si was developed in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model was proposed for simulation of the initial process of SEUs. The model was applied to SEU cross-section calculations for semiconductor memory devices. The calculated results were compared with measured SEU cross-sections and the other simulation result. The dependence of SEU cross-sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed. (author)

  15. Measuring the diffusion of Ti and Cu in low-k materials for microelectronic devices by EELS, EFTEM and EDX

    International Nuclear Information System (INIS)

    Barnes, J-P; Lafond, D; Guedj, C; Fayolle, M; Meininger, P; Maitrejean, S; David, T; Posseme, N; Bayle-Guillemaud, P; Chabli, Amal

    2006-01-01

    The need to reduce RC delay and cross talk in Cu interconnects means that ultra low-k dielectrics such as porous SiCOH are being integrated into microelectronic devices. Unfortunately porous materials lead to integration issues such as metal diffusion into the porosity of the dielectric, especially when chemical vapour deposition (CVD) methods are used for metal deposition. In our case, the copper anti-diffusion barrier used before Cu deposition is MOCVD TiN. Without an appropriate surface treatment (pore sealing) of the low-k the TiN may diffuse in the porosity. The presence of Ti or Cu in the low-k is deleterious as it can raise the dielectric constant and the leakage current. EFTEM EELS and EDX have been used to map Ti, Cu, O and C as a function of process conditions

  16. Nanofluidic Transistor Circuits

    Science.gov (United States)

    Chang, Hsueh-Chia; Cheng, Li-Jing; Yan, Yu; Slouka, Zdenek; Senapati, Satyajyoti

    2012-02-01

    Non-equilibrium ion/fluid transport physics across on-chip membranes/nanopores is used to construct rectifying, hysteretic, oscillatory, excitatory and inhibitory nanofluidic elements. Analogs to linear resistors, capacitors, inductors and constant-phase elements were reported earlier (Chang and Yossifon, BMF 2009). Nonlinear rectifier is designed by introducing intra-membrane conductivity gradient and by asymmetric external depletion with a reverse rectification (Yossifon and Chang, PRL, PRE, Europhys Lett 2009-2011). Gating phenomenon is introduced by functionalizing polyelectrolytes whose conformation is field/pH sensitive (Wang, Chang and Zhu, Macromolecules 2010). Surface ion depletion can drive Rubinstein's microvortex instability (Chang, Yossifon and Demekhin, Annual Rev of Fluid Mech, 2012) or Onsager-Wien's water dissociation phenomenon, leading to two distinct overlimiting I-V features. Bipolar membranes exhibit an S-hysteresis due to water dissociation (Cheng and Chang, BMF 2011). Coupling the hysteretic diode with some linear elements result in autonomous ion current oscillations, which undergo classical transitions to chaos. Our integrated nanofluidic circuits are used for molecular sensing, protein separation/concentration, electrospray etc.

  17. Experimental Device for Learning of Logical Circuit Design using Integrated Circuits

    OpenAIRE

    石橋, 孝昭

    2012-01-01

    This paper presents an experimental device for learning of logical circuit design using integrated circuits and breadboards. The experimental device can be made at a low cost and can be used for many subjects such as logical circuits, computer engineering, basic electricity, electrical circuits and electronic circuits. The proposed device is effective to learn the logical circuits than the usual lecture.

  18. Variational integrators for electric circuits

    International Nuclear Information System (INIS)

    Ober-Blöbaum, Sina; Tao, Molei; Cheng, Mulin; Owhadi, Houman; Marsden, Jerrold E.

    2013-01-01

    In this contribution, we develop a variational integrator for the simulation of (stochastic and multiscale) electric circuits. When considering the dynamics of an electric circuit, one is faced with three special situations: 1. The system involves external (control) forcing through external (controlled) voltage sources and resistors. 2. The system is constrained via the Kirchhoff current (KCL) and voltage laws (KVL). 3. The Lagrangian is degenerate. Based on a geometric setting, an appropriate variational formulation is presented to model the circuit from which the equations of motion are derived. A time-discrete variational formulation provides an iteration scheme for the simulation of the electric circuit. Dependent on the discretization, the intrinsic degeneracy of the system can be canceled for the discrete variational scheme. In this way, a variational integrator is constructed that gains several advantages compared to standard integration tools for circuits; in particular, a comparison to BDF methods (which are usually the method of choice for the simulation of electric circuits) shows that even for simple LCR circuits, a better energy behavior and frequency spectrum preservation can be observed using the developed variational integrator

  19. Integrated circuits, and design and manufacture thereof

    Science.gov (United States)

    Auracher, Stefan; Pribbernow, Claus; Hils, Andreas

    2006-04-18

    A representation of a macro for an integrated circuit layout. The representation may define sub-circuit cells of a module. The module may have a predefined functionality. The sub-circuit cells may include at least one reusable circuit cell. The reusable circuit cell may be configured such that when the predefined functionality of the module is not used, the reusable circuit cell is available for re-use.

  20. Studying the Mechanism of Hybrid Nanoparticle Photoresists: Effect of Particle Size on Photopatterning

    KAUST Repository

    Li, Li

    2015-07-28

    © 2015 American Chemical Society. Hf-based hybrid photoresist materials with three different organic ligands were prepared by a sol-gel-based method, and their patterning mechanism was investigated in detail. All hybrid nanoparticle resists are patternable using UV exposure. Their particle sizes show a dramatic increase from the initial 3-4 nm to submicron size after exposure, with no apparent inorganic content or thermal property change detected. XPS results showed that the mass percentage of the carboxylic group in the structure of nanoparticles decreased with increasing exposure duration. The particle coarsening sensitivities of those hybrid nanoparticles are consistent with their EUV performance. The current work provides an understanding for the development mechanism and future guidance for the design and processing of high performance resist materials for large-scale microelectronics device fabrication.

  1. Radiation-sensitive switching circuits

    Energy Technology Data Exchange (ETDEWEB)

    Moore, J.H.; Cockshott, C.P.

    1976-03-16

    A radiation-sensitive switching circuit includes a light emitting diode which from time to time illuminates a photo-transistor, the photo-transistor serving when its output reaches a predetermined value to operate a trigger circuit. In order to allow for aging of the components, the current flow through the diode is increased when the output from the transistor falls below a known level. Conveniently, this is achieved by having a transistor in parallel with the diode, and turning the transistor off when the output from the phototransistor becomes too low. The circuit is designed to control the ignition system in an automobile engine.

  2. The Maplin electronic circuits handbook

    CERN Document Server

    Tooley, Michael

    1990-01-01

    The Maplin Electronic Circuits Handbook provides pertinent data, formula, explanation, practical guidance, theory and practical guidance in the design, testing, and construction of electronic circuits. This book discusses the developments in electronics technology techniques.Organized into 11 chapters, this book begins with an overview of the common types of passive component. This text then provides the reader with sufficient information to make a correct selection of passive components for use in the circuits. Other chapters consider the various types of the most commonly used semiconductor

  3. Secure integrated circuits and systems

    CERN Document Server

    Verbauwhede, Ingrid MR

    2010-01-01

    On any advanced integrated circuit or 'system-on-chip' there is a need for security. In many applications the actual implementation has become the weakest link in security rather than the algorithms or protocols. The purpose of the book is to give the integrated circuits and systems designer an insight into the basics of security and cryptography from the implementation point of view. As a designer of integrated circuits and systems it is important to know both the state-of-the-art attacks as well as the countermeasures. Optimizing for security is different from optimizations for speed, area,

  4. INTEGRATED SENSOR EVALUATION CIRCUIT AND METHOD FOR OPERATING SAID CIRCUIT

    OpenAIRE

    Krüger, Jens; Gausa, Dominik

    2015-01-01

    WO15090426A1 Sensor evaluation device and method for operating said device Integrated sensor evaluation circuit for evaluating a sensor signal (14) received from a sensor (12), having a first connection (28a) for connection to the sensor and a second connection (28b) for connection to the sensor. The integrated sensor evaluation circuit comprises a configuration data memory (16) for storing configuration data which describe signal properties of a plurality of sensor control signals (26a-c). T...

  5. A Hybrid DGTD-MNA Scheme for Analyzing Complex Electromagnetic Systems

    KAUST Repository

    Li, Peng; Jiang, Li-Jun; Bagci, Hakan

    2015-01-01

    lumped circuit elements, the standard Newton-Raphson method is applied at every time step. Additionally, a local time-stepping scheme is developed to improve the efficiency of the hybrid solver. Numerical examples consisting of EM systems loaded

  6. Hydrostatic and hybrid bearing design

    CERN Document Server

    Rowe, W B

    1983-01-01

    Hydrostatic and Hybrid Bearing Design is a 15-chapter book that focuses on the bearing design and testing. This book first describes the application of hydrostatic bearings, as well as the device pressure, flow, force, power, and temperature. Subsequent chapters discuss the load and flow rate of thrust pads; circuit design, flow control, load, and stiffness; and the basis of the design procedures and selection of tolerances. The specific types of bearings, their design, dynamics, and experimental methods and testing are also shown. This book will be very valuable to students of engineering des

  7. Quantum circuit behaviour

    International Nuclear Information System (INIS)

    Poulton, D.

    1989-09-01

    Single electron tunnelling in multiply connected weak link systems is considered. Using a second quantised approach the tunnel current, in both normal and superconducting systems, using perturbation theory, is derived. The tunnel currents are determined as a function of an Aharanov-Bohm phase (acquired by the electrons). Using these results, the multiply connected system is then discussed when coupled to a resonant LC circuit. The resulting dynamics of this composite system are then determined. In the superconducting case the results are compared and contrasted with flux mode behaviour seen in large superconducting weak link rings. Systems in which the predicted dynamics may be seen are also discussed. In analogy to the electron tunnelling analysis, the tunnelling of magnetic flux quanta through the weak link is also considered. Here, the voltage across the weak link, due to flux tunnelling, is determined as a function of an externally applied current. This is done for both singly and multiply connected flux systems. The results are compared and contrasted with charge mode behaviour seen in superconducting weak link systems. Finally, the behaviour of simple quantum fluids is considered when subject to an external rotation. Using a microscopic analysis it is found that the microscopic quantum behaviour of the particles is manifest on a macroscopic level. Results are derived for bosonic, fermionic and BCS pair-type systems. The connection between flux quantisation in electromagnetic systems is also made. Using these results, the dynamics of such a quantum fluid is considered when coupled to a rotating torsional oscillator. The results are compared with those found in SQUID devices. A model is also presented which discusses the possible excited state dynamics of such a fluid. (author)

  8. Transistor and integrated circuit manufacture

    International Nuclear Information System (INIS)

    Colman, D.

    1978-01-01

    This invention relates to the manufacture of transistors and integrated circuits by ion bombardment techniques and is particularly, but not exclusively, of value in the manufacture of so-called integrated injection logic circuitry. (author)

  9. Time domain analog circuit simulation

    NARCIS (Netherlands)

    Fijnvandraat, J.G.; Houben, S.H.M.J.; Maten, ter E.J.W.; Peters, J.M.F.

    2006-01-01

    Recent developments of new methods for simulating electric circuits are described. Emphasis is put on methods that fit existing datastructures for backward differentiation formulae methods. These methods can be modified to apply to hierarchically organized datastructures, which allows for efficient

  10. Circuit design on plastic foils

    CERN Document Server

    Raiteri, Daniele; Roermund, Arthur H M

    2015-01-01

    This book illustrates a variety of circuit designs on plastic foils and provides all the information needed to undertake successful designs in large-area electronics.  The authors demonstrate architectural, circuit, layout, and device solutions and explain the reasons and the creative process behind each. Readers will learn how to keep under control large-area technologies and achieve robust, reliable circuit designs that can face the challenges imposed by low-cost low-temperature high-throughput manufacturing.   • Discusses implications of problems associated with large-area electronics and compares them to standard silicon; • Provides the basis for understanding physics and modeling of disordered material; • Includes guidelines to quickly setup the basic CAD tools enabling efficient and reliable designs; • Illustrates practical solutions to cope with hard/soft faults, variability, mismatch, aging and bias stress at architecture, circuit, layout, and device levels.

  11. Discharge quenching circuit for counters

    International Nuclear Information System (INIS)

    Karasik, A.S.

    1982-01-01

    A circuit for quenching discharges in gas-discharge detectors with working voltage of 3-5 kV based on transistors operating in the avalanche mode is described. The quenching circuit consists of a coordinating emitter follower, amplifier-shaper for avalanche key cascade control which changes potential on the counter electrodes and a shaper of discharge quenching duration. The emitter follower is assembled according to a widely used flowsheet with two transistors. The circuit permits to obtain a rectangular quenching pulse with front of 100 ns and an amplitude of up to 3.2 kV at duration of 500 μm-8 ms. Application of the quenching circuit described permits to obtain countering characteristics with the slope less than or equal to 0.02%/V and plateau extent greater than or equal to 300 V [ru

  12. Transistor and integrated circuit manufacture

    Energy Technology Data Exchange (ETDEWEB)

    Colman, D

    1978-09-27

    This invention relates to the manufacture of transistors and integrated circuits by ion bombardment techniques and is particularly, but not exclusively, of value in the manufacture of so-called integrated injection logic circuitry.

  13. Ignition circuit for combustion engines

    Energy Technology Data Exchange (ETDEWEB)

    Becker, H W

    1977-05-26

    The invention refers to the ignition circuit for combustion engines, which are battery fed. The circuit contains a transistor and an oscillator to produce an output voltage on the secondary winding of an output transformer to supply an ignition current. The plant is controlled by an interrupter. The purpose of the invention is to form such a circuit that improved sparks for ignition are produced, on the one hand, and that on the other hand, the plant can continue to function after loss of the oscillator. The problem is solved by the battery and the secondary winding of the output transformers of the oscillator are connected via a rectifier circuit to produce a resultant total voltage with the ignition coil from the battery voltage and the rectified pulsating oscillator output.

  14. Reverse engineering of integrated circuits

    Science.gov (United States)

    Chisholm, Gregory H.; Eckmann, Steven T.; Lain, Christopher M.; Veroff, Robert L.

    2003-01-01

    Software and a method therein to analyze circuits. The software comprises several tools, each of which perform particular functions in the Reverse Engineering process. The analyst, through a standard interface, directs each tool to the portion of the task to which it is most well suited, rendering previously intractable problems solvable. The tools are generally used iteratively to produce a successively more abstract picture of a circuit, about which incomplete a priori knowledge exists.

  15. Receiver Gain Modulation Circuit

    Science.gov (United States)

    Jones, Hollis; Racette, Paul; Walker, David; Gu, Dazhen

    2011-01-01

    A receiver gain modulation circuit (RGMC) was developed that modulates the power gain of the output of a radiometer receiver with a test signal. As the radiometer receiver switches between calibration noise references, the test signal is mixed with the calibrated noise and thus produces an ensemble set of measurements from which ensemble statistical analysis can be used to extract statistical information about the test signal. The RGMC is an enabling technology of the ensemble detector. As a key component for achieving ensemble detection and analysis, the RGMC has broad aeronautical and space applications. The RGMC can be used to test and develop new calibration algorithms, for example, to detect gain anomalies, and/or correct for slow drifts that affect climate-quality measurements over an accelerated time scale. A generalized approach to analyzing radiometer system designs yields a mathematical treatment of noise reference measurements in calibration algorithms. By treating the measurements from the different noise references as ensemble samples of the receiver state, i.e. receiver gain, a quantitative description of the non-stationary properties of the underlying receiver fluctuations can be derived. Excellent agreement has been obtained between model calculations and radiometric measurements. The mathematical formulation is equivalent to modulating the gain of a stable receiver with an externally generated signal and is the basis for ensemble detection and analysis (EDA). The concept of generating ensemble data sets using an ensemble detector is similar to the ensemble data sets generated as part of ensemble empirical mode decomposition (EEMD) with exception of a key distinguishing factor. EEMD adds noise to the signal under study whereas EDA mixes the signal with calibrated noise. It is mixing with calibrated noise that permits the measurement of temporal-functional variability of uncertainty in the underlying process. The RGMC permits the evaluation of EDA by

  16. Chemical-mechanical polishing of metal and dielectric films for microelectronic applications

    Science.gov (United States)

    Hegde, Sharath

    The demand for smaller, faster devices has led the integrated circuit (IC) industry to continually increase the device density on a chip while simultaneously reducing feature dimensions. Copper interconnects and multilevel metallization (MLM) schemes were introduced to meet some of these challenges. With the employment of MLM in the ultra-large-scale-integrated (ULSI) circuit fabrication technology, repeated planarization of different surface layers with tolerance of a few nanometers is required. Presently, chemical-mechanical planarization (CMP) is the only technique that can meet this requirement. Damascene and shallow trench isolation processes are currently used in conjunction with CMP in the fabrication of multilevel copper interconnects and isolation of devices, respectively, for advanced logic and memory devices. These processes, at some stage, require simultaneous polishing of two different materials using a single slurry that offers high polish rates, high polish selectivity to one material over the other and good post-polish surface finish. Slurries containing one kind of abrasive particles do not meet most of these demands due mainly to the unique physical and chemical properties of each abrasive. However, if a composite particle is formed that takes the advantages of different abrasives while mitigating their disadvantages, the CMP performance of resulting abrasives would be compelling. It is demonstrated that electrostatic interactions between ceria and silica particles at pH 4 can be used to produce composite particles with enhanced functionality. Zeta potential measurement and TEM images used for particle characterization show the presence of such composite particles with smaller shell particles attached onto larger core particles. Slurries containing ceria (core)/silica (shell) and silica (core)/ceria (shell) composite particles when used to polish metal and dielectric films, respectively, yield both enhanced metal and dielectric film removal rates

  17. Hybrid stars

    Indian Academy of Sciences (India)

    Hybrid stars. AsHOK GOYAL. Department of Physics and Astrophysics, University of Delhi, Delhi 110 007, India. Abstract. Recently there have been important developments in the determination of neutron ... number and the electric charge. ... available to the system to rearrange concentration of charges for a given fraction of.

  18. Universal discrete Fourier optics RF photonic integrated circuit architecture.

    Science.gov (United States)

    Hall, Trevor J; Hasan, Mehedi

    2016-04-04

    This paper describes a coherent electro-optic circuit architecture that generates a frequency comb consisting of N spatially separated orders using a generalised Mach-Zenhder interferometer (MZI) with its N × 1 combiner replaced by an optical N × N Discrete Fourier Transform (DFT). Advantage may be taken of the tight optical path-length control, component and circuit symmetries and emerging trimming algorithms offered by photonic integration in any platform that offers linear electro-optic phase modulation such as LiNbO3, silicon, III-V or hybrid technology. The circuit architecture subsumes all MZI-based RF photonic circuit architectures in the prior art given an appropriate choice of output port(s) and dimension N although the principal application envisaged is phase correlated subcarrier generation for all optical orthogonal frequency division multiplexing. A transfer matrix approach is used to model the operation of the architecture. The predictions of the model are validated by simulations performed using an industry standard software tool. Implementation is found to be practical.

  19. Equivalent circuit and characteristic simulation of a brushless electrically excited synchronous wind power generator

    Science.gov (United States)

    Wang, Hao; Zhang, Fengge; Guan, Tao; Yu, Siyang

    2017-09-01

    A brushless electrically excited synchronous generator (BEESG) with a hybrid rotor is a novel electrically excited synchronous generator. The BEESG proposed in this paper is composed of a conventional stator with two different sets of windings with different pole numbers, and a hybrid rotor with powerful coupling capacity. The pole number of the rotor is different from those of the stator windings. Thus, an analysis method different from that applied to conventional generators should be applied to the BEESG. In view of this problem, the equivalent circuit and electromagnetic torque expression of the BEESG are derived on the basis of electromagnetic relation of the proposed generator. The generator is simulated and tested experimentally using the established equivalent circuit model. The experimental and simulation data are then analyzed and compared. Results show the validity of the equivalent circuit model.

  20. Moving the boundary between wavelength resources in optical packet and circuit integrated ring network.

    Science.gov (United States)

    Furukawa, Hideaki; Miyazawa, Takaya; Wada, Naoya; Harai, Hiroaki

    2014-01-13

    Optical packet and circuit integrated (OPCI) networks provide both optical packet switching (OPS) and optical circuit switching (OCS) links on the same physical infrastructure using a wavelength multiplexing technique in order to deal with best-effort services and quality-guaranteed services. To immediately respond to changes in user demand for OPS and OCS links, OPCI networks should dynamically adjust the amount of wavelength resources for each link. We propose a resource-adjustable hybrid optical packet/circuit switch and transponder. We also verify that distributed control of resource adjustments can be applied to the OPCI ring network testbed we developed. In cooperation with the resource adjustment mechanism and the hybrid switch and transponder, we demonstrate that automatically allocating a shared resource and moving the wavelength resource boundary between OPS and OCS links can be successfully executed, depending on the number of optical paths in use.

  1. A neuromorphic circuit mimicking biological short-term memory.

    Science.gov (United States)

    Barzegarjalali, Saeid; Parker, Alice C

    2016-08-01

    Research shows that the way we remember things for a few seconds is a different mechanism from the way we remember things for a longer time. Short-term memory is based on persistently firing neurons, whereas storing information for a longer time is based on strengthening the synapses or even forming new neural connections. Information about location and appearance of an object is segregated and processed by separate neurons. Furthermore neurons can continue firing using different mechanisms. Here, we have designed a biomimetic neuromorphic circuit that mimics short-term memory by firing neurons, using biological mechanisms to remember location and shape of an object. Our neuromorphic circuit has a hybrid architecture. Neurons are designed with CMOS 45nm technology and synapses are designed with carbon nanotubes (CNT).

  2. Entangling distant resonant exchange qubits via circuit quantum electrodynamics

    Science.gov (United States)

    Srinivasa, V.; Taylor, J. M.; Tahan, Charles

    2016-11-01

    We investigate a hybrid quantum system consisting of spatially separated resonant exchange qubits, defined in three-electron semiconductor triple quantum dots, that are coupled via a superconducting transmission line resonator. Drawing on methods from circuit quantum electrodynamics and Hartmann-Hahn double resonance techniques, we analyze three specific approaches for implementing resonator-mediated two-qubit entangling gates in both dispersive and resonant regimes of interaction. We calculate entangling gate fidelities as well as the rate of relaxation via phonons for resonant exchange qubits in silicon triple dots and show that such an implementation is particularly well suited to achieving the strong coupling regime. Our approach combines the favorable coherence properties of encoded spin qubits in silicon with the rapid and robust long-range entanglement provided by circuit QED systems.

  3. Spectral Purity Enhancement via Polyphase Multipath Circuits

    NARCIS (Netherlands)

    Mensink, E.; Klumperink, Eric A.M.; Nauta, Bram

    2004-01-01

    The central question of this paper is: can we enhance the spectral purity of nonlinear circuits by using polyphase multipath circuits? The basic idea behind polyphase multipath circuits is to split the nonlinear circuits into two or more paths and exploit phase differences between these paths to

  4. Distortion Cancellation via Polyphase Multipath Circuits

    NARCIS (Netherlands)

    Mensink, E.; Klumperink, Eric A.M.; Nauta, Bram

    The central question of this paper is: can we enhance the spectral purity of nonlinear circuits with the help of polyphase multipath circuits. Polyphase multipath circuits are circuits with two or more paths that exploit phase differences between the paths to cancel unwanted signals. It turns out

  5. Dynamic theory for the mesoscopic electric circuit

    International Nuclear Information System (INIS)

    Chen Bin; Shen Xiaojuan; Li Youquan; Sun LiLy; Yin Zhujian

    2005-01-01

    The quantum theory for mesoscopic electric circuit with charge discreteness is briefly described. The minibands of quasienergy in LC design mesoscopic electric circuit have been found. In the mesoscopic 'pure' inductance design circuit, just like in the mesoscopic metallic rings, the quantum dynamic characteristics have been obtained explicitly. In the 'pure' capacity design circuit, the Coulomb blockade had also been addressed

  6. Multi-Layer E-Textile Circuits

    Science.gov (United States)

    Dunne, Lucy E.; Bibeau, Kaila; Mulligan, Lucie; Frith, Ashton; Simon, Cory

    2012-01-01

    Stitched e-textile circuits facilitate wearable, flexible, comfortable wearable technology. However, while stitched methods of e-textile circuits are common, multi-layer circuit creation remains a challenge. Here, we present methods of stitched multi-layer circuit creation using accessible tools and techniques.

  7. The Circuit Theory Behind Coupled-Mode Magnetic Resonance-Based Wireless Power Transmission.

    Science.gov (United States)

    Kiani, Mehdi; Ghovanloo, Maysam

    2012-09-01

    Inductive coupling is a viable scheme to wirelessly energize devices with a wide range of power requirements from nanowatts in radio frequency identification tags to milliwatts in implantable microelectronic devices, watts in mobile electronics, and kilowatts in electric cars. Several analytical methods for estimating the power transfer efficiency (PTE) across inductive power transmission links have been devised based on circuit and electromagnetic theories by electrical engineers and physicists, respectively. However, a direct side-by-side comparison between these two approaches is lacking. Here, we have analyzed the PTE of a pair of capacitively loaded inductors via reflected load theory (RLT) and compared it with a method known as coupled-mode theory (CMT). We have also derived PTE equations for multiple capacitively loaded inductors based on both RLT and CMT. We have proven that both methods basically result in the same set of equations in steady state and either method can be applied for short- or midrange coupling conditions. We have verified the accuracy of both methods through measurements, and also analyzed the transient response of a pair of capacitively loaded inductors. Our analysis shows that the CMT is only applicable to coils with high quality factor ( Q ) and large coupling distance. It simplifies the analysis by reducing the order of the differential equations by half compared to the circuit theory.

  8. Highly Selective and Sensitive Self-Powered Glucose Sensor Based on Capacitor Circuit.

    Science.gov (United States)

    Slaughter, Gymama; Kulkarni, Tanmay

    2017-05-03

    Enzymatic glucose biosensors are being developed to incorporate nanoscale materials with the biological recognition elements to assist in the rapid and sensitive detection of glucose. Here we present a highly sensitive and selective glucose sensor based on capacitor circuit that is capable of selectively sensing glucose while simultaneously powering a small microelectronic device. Multi-walled carbon nanotubes (MWCNTs) is chemically modified with pyrroloquinoline quinone glucose dehydrogenase (PQQ-GDH) and bilirubin oxidase (BOD) at anode and cathode, respectively, in the biofuel cell arrangement. The input voltage (as low as 0.25 V) from the biofuel cell is converted to a stepped-up power and charged to the capacitor to the voltage of 1.8 V. The frequency of the charge/discharge cycle of the capacitor corresponded to the oxidation of glucose. The biofuel cell structure-based glucose sensor synergizes the advantages of both the glucose biosensor and biofuel cell. In addition, this glucose sensor favored a very high selectivity towards glucose in the presence of competing and non-competing analytes. It exhibited unprecedented sensitivity of 37.66 Hz/mM.cm 2 and a linear range of 1 to 20 mM. This innovative self-powered glucose sensor opens new doors for implementation of biofuel cells and capacitor circuits for medical diagnosis and powering therapeutic devices.

  9. Potential for integrated optical circuits in advanced aircraft with fiber optic control and monitoring systems

    Science.gov (United States)

    Baumbick, Robert J.

    1991-02-01

    Fiber optic technology is expected to be used in future advanced weapons platforms as well as commercial aerospace applications. Fiber optic waveguides will be used to transmit noise free high speed data between a multitude of computers as well as audio and video information to the flight crew. Passive optical sensors connected to control computers with optical fiber interconnects will serve both control and monitoring functions. Implementation of fiber optic technology has already begun. Both the military and NASA have several programs in place. A cooperative program called FOCSI (Fiber Optic Control System Integration) between NASA Lewis and the NAVY to build environmentally test and flight demonstrate sensor systems for propul sion and flight control systems is currently underway. Integrated Optical Circuits (IOC''s) are also being given serious consideration for use in advanced aircraft sys tems. IOC''s will result in miniaturization and localization of components to gener ate detect optical signals and process them for use by the control computers. In some complex systems IOC''s may be required to perform calculations optically if the technology is ready replacing some of the electronic systems used today. IOC''s are attractive because they will result in rugged components capable of withstanding severe environments in advanced aerospace vehicles. Manufacturing technology devel oped for microelectronic integrated circuits applied to IOC''s will result in cost effective manufacturing. This paper reviews the current FOCSI program and describes the role of IOC''s in FOCSI applications.

  10. Design of two digital radiation tolerant integrated circuits for high energy physics experiments data readout

    CERN Document Server

    Bonacini, Sandro

    2003-01-01

    High Energy Physics research (HEP) involves the design of readout electron- ics for its experiments, which generate a high radiation ¯eld in the detectors. The several integrated circuits placed in the future Large Hadron Collider (LHC) experiments' environment have to resist the radiation and carry out their normal operation. In this thesis I will describe in detail what, during my 10-months partic- ipation in the digital section of the Microelectronics group at CERN, I had the possibility to work on: - The design of a radiation-tolerant data readout digital integrated cir- cuit in a 0.25 ¹m CMOS technology, called \\the Kchip", for the CMS preshower front-end system. This will be described in Chapter 3. - The design of a radiation-tolerant SRAM integrated circuit in a 0.13 ¹m CMOS technology, for technology radiation testing purposes and fu- ture applications in the HEP ¯eld. The SRAM will be described in Chapter 4. All the work has carried out under the supervision and with the help of Dr. Kostas Klouki...

  11. Adhesion and failure analysis of metal-polymer interface in flexible printed circuits boards

    Science.gov (United States)

    Park, Sanghee; Kim, Ye Chan; Choi, Kisuk; Chae, Heeyop; Suhr, Jonghwan; Nam, Jae-Do

    2017-12-01

    As device miniaturization in microelectronics is currently requested in the development of high performance device, which usually include highly-integrated metal-polyimide multilayer structures. A redistribution layer (RDL) process is currently emerging as one of the most advance fabrication techniques for on-chip interconnect and packaging. One of the major issues in this process is the poor adhesion of the metal-polyimide interfaces particularly in flexible circuit boards due to the flexibility and bendability of devices. In this study, low pressure O2 plasma treatment was investigated to improve the adhesion of metal-polyimide interfaces, using inductively coupled plasma (ICP) treatment. We identified that the adhesion of metal-polyimide interfaces was greatly improved by the surface roughness control providing 46.1 MPa of shear force in the ball shear test after O2 plasma treatment, compared 14.2 MPa without O2 plasma treatment. It was seemingly due to the fact that the adhesion in metal-polyimide interfaces was improved by a chemical conversion of C=O to C-O bonds and by a ring opening reaction of imide groups, which was confirmed with FT-IR analysis. In the finite element numerical analysis of metal-polyimide interfaces, the O2 plasma treated interface showed that the in-plane stress distribution and the vertical directional deformation agreed well with real failure modes in flexible circuits manufacturing.

  12. An Asynchronous Circuit Design Technique for a Flexible 8-Bit Microprocessor

    Science.gov (United States)

    Karaki, Nobuo; Nanmoto, Takashi; Inoue, Satoshi

    This paper presents an asynchronous design technique, an enabler for the emerging technology of flexible microelectronics that feature low-temperature processed polysilicon (LTPS) thin-film transistors (TFT) and surface-free technology by laser annealing/ablation (SUFTLA®). The first design instance chosen is an 8-bit microprocessor. LTPS TFTs are good for realizing displays having integrated VLSI circuit at lower costs. However, LTPS TFTs have drawbacks, including substantial deviations in characteristics and the self-heating phenomenon. To solve these problems, the authors adopted the asynchronous circuit design technique and developed an asynchronous design language called Verilog+, which is based on a subset of Verilog HDL® and includes minimal primitives used for describing the communications between modules, and the dedicated tools including a translator called xlator and a synthesizer called ctrlsyn. The flexible 8-bit microprocessor stably operates at 500kHz, drawing 180μA from a 5V power source. The microprocessor's electromagnetic emissions are 21dB less than those of the synchronous counterpart.

  13. Hybrid integrated sensor for position measurement

    International Nuclear Information System (INIS)

    Schmidt, B.; Schott, H.; Just, H.-J.

    1986-01-01

    The design, fabrication and performance of an integrated two-dimensional position sensitive photodetector are presented. The optoelectronic device used as sensitive element in the circuit is a full area position sensitive photodiode (PPD) with high linearity over the full sensitive area. The PPD is integrated with the analog electronics in a hybrid circuit using thick film technology. The analog electronics includes the signal amplification and the signal conditioning to form the output signals proportional to the light beam center position at the sensor surface and an output signal proportional to the light beam intensity. Using hybrid integration a new position sensitive transducer is developed giving output signals, transmiting in large distances without problems and driving directly actuators in any control system

  14. Cooling high heat flux micro-electronic systems using refrigerants in high aspect ratio multi-microchannel evaporators

    International Nuclear Information System (INIS)

    Costa-Patry, E.

    2011-11-01

    Improving the energy efficiency of cooling systems can contribute to reduce the emission of greenhouse gases. Currently, most microelectronic applications are air-cooled. Switching to two-phase cooling systems would decrease power consumption and allow for the reuse of the extracted heat. For this type of application, multi-microchannel evaporators are thought to be well adapted. However, such devices have not been tested for a wide range of operating conditions, such that their thermal response to the high non-uniform power map typically generated by microelectronics has not been studied. This research project aims at clarifying these gray areas by investigating the behavior of the two-phase flow of different refrigerants in silicon and copper multi-microchannel evaporators under uniform, non-uniform and transient heat fluxes operating conditions. The test elements use as a heat source a pseudo-chip able to mimic the behavior of a CPU. It is formed by 35 independent sub-heaters, each having its own temperature sensor, such that 35 temperature and 35 heat flux measurements can be made simultaneously. Careful measurements of each pressure drop component (inlet, microchannels and outlet) found in the micro-evaporators showed the importance of the inlet and outlet restriction pressure losses. The overall pressure drop levels found in the copper test section were low enough to possibly be driven by a thermosyphon system. The heat transfer coefficients measured for uniform heat flux conditions were very high and typically followed a V-shape curve. The first branch was associated to the slug flow regime and the second to the annular flow regime. By tracking the minimum level of heat transfer, a transition criteria between the regimes was established, which included the effect of heat flux on the transition. Then for each branch, a different prediction method was used to form the first flow pattern-based prediction method for two-phase heat transfer in microchannels. A

  15. Hybrid microcircuit technology handbook materials, processes, design, testing and production

    CERN Document Server

    Licari, James J

    1998-01-01

    The Hybrid Microcircuit Technology Handbook integrates the many diverse technologies used in the design, fabrication, assembly, and testing of hybrid segments crucial to the success of producing reliable circuits in high yields. Among these are: resistor trimming, wire bonding, die attachment, cleaning, hermetic sealing, and moisture analysis. In addition to thin films, thick films, and assembly processes, important chapters on substrate selections, handling (including electrostatic discharge), failure analysis, and documentation are included. A comprehensive chapter of design guidelines will

  16. Instrumentation and test gear circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Instrumentation and Test Gear Circuits Manual provides diagrams, graphs, tables, and discussions of several types of practical circuits. The practical circuits covered in this book include attenuators, bridges, scope trace doublers, timebases, and digital frequency meters. Chapter 1 discusses the basic instrumentation and test gear principles. Chapter 2 deals with the design of passive attenuators, and Chapter 3 with passive and active filter circuits. The subsequent chapters tackle 'bridge' circuits, analogue and digital metering techniques and circuitry, signal and waveform generation, and p

  17. The FE-I4 pixel readout integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Sciveres, M., E-mail: mgarcia-sciveres@bl.gov [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Arutinov, D.; Barbero, M. [University of Bonn, Bonn (Germany); Beccherle, R. [Istituto Nazionale di Fisica Nucleare Sezione di Genova, Genova (Italy); Dube, S.; Elledge, D. [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Fleury, J. [Laboratoire de l' Accelerateur Lineaire, Orsay (France); Fougeron, D.; Gensolen, F. [Centre de Physique des Particules de Marseille, Marseille (France); Gnani, D. [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Gromov, V. [Nationaal Instituut voor Subatomaire Fysica, Amsterdam (Netherlands); Hemperek, T.; Karagounis, M. [University of Bonn, Bonn (Germany); Kluit, R. [Nationaal Instituut voor Subatomaire Fysica, Amsterdam (Netherlands); Kruth, A. [University of Bonn, Bonn (Germany); Mekkaoui, A. [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Menouni, M. [Centre de Physique des Particules de Marseille, Marseille (France); Schipper, J.-D. [Nationaal Instituut voor Subatomaire Fysica, Amsterdam (Netherlands)

    2011-04-21

    A new pixel readout integrated circuit denominated FE-I4 is being designed to meet the requirements of ATLAS experiment upgrades. It will be the largest readout IC produced to date for particle physics applications, filling the maximum allowed reticle area. This will significantly reduce the cost of future hybrid pixel detectors. In addition, FE-I4 will have smaller pixels and higher rate capability than the present generation of LHC pixel detectors. Design features are described along with simulation and test results, including low power and high rate readout architecture, mixed signal design strategy, and yield hardening.

  18. International Conference on Nano-electronics, Circuits & Communication Systems

    CERN Document Server

    2017-01-01

    This volume comprises select papers from the International Conference on Nano-electronics, Circuits & Communication Systems(NCCS). The conference focused on the frontier issues and their applications in business, academia, industry, and other allied areas. This international conference aimed to bring together scientists, researchers, engineers from academia and industry. The book covers technological developments and current trends in key areas such as VLSI design, IC manufacturing, and applications such as communications, ICT, and hybrid electronics. The contents of this volume will prove useful to researchers, professionals, and students alike.

  19. Logic circuits from zero forcing.

    Science.gov (United States)

    Burgarth, Daniel; Giovannetti, Vittorio; Hogben, Leslie; Severini, Simone; Young, Michael

    We design logic circuits based on the notion of zero forcing on graphs; each gate of the circuits is a gadget in which zero forcing is performed. We show that such circuits can evaluate every monotone Boolean function. By using two vertices to encode each logical bit, we obtain universal computation. We also highlight a phenomenon of "back forcing" as a property of each function. Such a phenomenon occurs in a circuit when the input of gates which have been already used at a given time step is further modified by a computation actually performed at a later stage. Finally, we show that zero forcing can be also used to implement reversible computation. The model introduced here provides a potentially new tool in the analysis of Boolean functions, with particular attention to monotonicity. Moreover, in the light of applications of zero forcing in quantum mechanics, the link with Boolean functions may suggest a new directions in quantum control theory and in the study of engineered quantum spin systems. It is an open technical problem to verify whether there is a link between zero forcing and computation with contact circuits.

  20. Installations having pressurised fluid circuits

    International Nuclear Information System (INIS)

    Rigg, S.; Grant, J.

    1977-01-01

    Reference is made to nuclear installations having pressurised coolant flow circuits. Breaches in such circuits may quickly result in much damage to the plant. Devices such as non-return valves, orifice plates, and automatically operated shut-off valves have been provided to prevent or reduce fluid flow through a breached pipe line, but such devices have several disadvantages; they may present large restrictions to normal flow of coolant, and may depend on the operation of ancillary equipment, with consequent delay in bringing them into operation in an emergency. Other expedients that have been adopted to prevent or reduce reverse flow through an upstream breach comprise various forms of hydraulic counter flow brakes. The arrangement described has at least one variable fluid brake comprising a fluidic device connected into a duct in the pressurised circuit, the device having an inlet, an outlet, a vortex chamber between the inlet and outlet, a control jet for introducing fluid into the vortex chamber, connections communicating the inlet and the outlet into one part of the circuit and the control jet into another region at a complementary pressure so that, in the event of a breach in the circuit in one region, fluid passes from the other region to enter the vortex chamber to stimulate pressure to create a flow restricting vortex in the chamber that reduces flow through the breach. The system finds particular application to stream generating pressure tube reactors, such as the steam generating heavy water reactor at UKAEA, Winfrith. (U.K.)