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Sample records for hybrid light-emitting device

  1. Hybrid perovskites: Approaches towards light-emitting devices

    KAUST Repository

    Alias, Mohd Sharizal

    2016-10-06

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

  2. New hybrid encapsulation for flexible organic light-emitting devices on plastic substrates

    Institute of Scientific and Technical Information of China (English)

    LIU Song; ZHANG DeQiang; LI Yang; DUAN Lian; DONG GuiFang; WANG LiDuo; QIU Yong

    2008-01-01

    The hybrid encapsulation for flexible organic light-emitting devices on plastic substrate was investi-gated. The hybrid encapsulation consisted of four periods of Alq3/LiF layers as the pre-encapsulation layer and a flexible aluminum foil coated with getter as the encapsulation cap. We measured the device lifetime at a continuous constant current of 20 mA/cm2, which corresponded to an initial luminance of 2000 cd/m2, The half-luminance decay time of the encapsulated device was about 458 h. More over, the hybrid encapsulation is ultrathin and flexible, ensuring device bendability.

  3. Hybrid silicon nanocrystal-organic light-emitting devices for infrared electroluminescence.

    Science.gov (United States)

    Cheng, Kai-Yuan; Anthony, Rebecca; Kortshagen, Uwe R; Holmes, Russell J

    2010-04-14

    We demonstrate hybrid inorganic-organic light-emitting devices with peak electroluminescence (EL) at a wavelength of 868 nm using silicon nanocrystals (SiNCs). An external quantum efficiency of 0.6% is realized in the forward-emitted direction, with emission originating primarily from the SiNCs. Microscopic characterization indicates that complete coverage of the SiNCs on the conjugated polymer hole-transporting layer is required to observe efficient EL.

  4. White organic light emitting devices with hybrid emissive layers combining phosphorescence and fluorescence

    Energy Technology Data Exchange (ETDEWEB)

    Lei Gangtie; Chen Xiaolan; Wang Lei; Zhu Meixiang; Zhu Weiguo [Key Lab of Environmental-friendly Chemistry and Application of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan 411105 (China); Wang Liduo; Qiu Yong [Key Lab of Organic-Optoelectronics and Molecular Sciences of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084 (China)], E-mail: lgt@xtu.edu.cn

    2008-05-21

    We fabricated a white organic light-emitting diode (WOLED) by hybrid emissive layers which combined phosphorescence with fluorescence. In this device, the thin layer of 4-(dicyanomethylene)-2-(t-butyl)-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran played the role of undoped red emissive layer which was inserted between two blue phosphorescence emissive layers. The blue phosphorescent dye was bis[(4, 6-difluorophenyl)-pyridinato-N, C{sup 2}] (picolinato) Ir(III), which was doped in the host material, N, N'-dicarbazolyl-1, 4-dimethene-benzene. The WOLED showed stable Commission Internationale de L'Eclairage coordinates and a high efficency of 9.6 cd A{sup -1} when the current density was 1.8 A m{sup -2}. The maximum luminance of the device achieved was 17 400 cd m{sup -2} when the current density was 3000 A m{sup -2}.

  5. Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2016-01-01

    An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

  6. Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2017-01-01

    An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

  7. Light-Emitting Devices with Conjugated Polymers

    Directory of Open Access Journals (Sweden)

    Xian-Yu Deng

    2011-03-01

    Full Text Available This article introduces a previous study and tremendous progress in basic theoretical modeling, material developments and device engineering for polymer light-emitting devices (PLEDs.

  8. Quantum dot-block copolymer hybrids with improved properties and their application to quantum dot light-emitting devices.

    Science.gov (United States)

    Zorn, Matthias; Bae, Wan Ki; Kwak, Jeonghun; Lee, Hyemin; Lee, Changhee; Zentel, Rudolf; Char, Kookheon

    2009-05-26

    To combine the optical properties of CdSe@ZnS quantum dots (QDs) with the electrical properties of semiconducting polymers, we prepared QD/polymer hybrids by grafting a block copolymer (BCP) containing thiol-anchoring moieties (poly(para-methyl triphenylamine-b-cysteamine acrylamide)) onto the surfaces of QDs through the ligand exchange procedure. The prepared QD/polymer hybrids possess improved processability such as enhanced solubility in various organic solvents as well as the film formation properties along with the improved colloidal stability derived from the grafted polymer shells. We also demonstrated light-emitting diodes based on QD/polymer hybrids, exhibiting the improved device performance (i.e., 3-fold increase in the external quantum efficiency) compared with the devices prepared by pristine (unmodified) QDs.

  9. Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

    Science.gov (United States)

    Cao, Jin; Xie, Jing-Wei; Wei, Xiang; Zhou, Jie; Chen, Chao-Ping; Wang, Zi-Xing; Jhun, Chulgyu

    2016-12-01

    A bright white quantum dot light-emitting device (white-QLED) with 4-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-2- [3-(tri-phenylen-2-yl)phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2@8 V with the Commission Internationale de l’Eclairage (CIE) chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence (EL) spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED. Project supported by the National Natural Science Foundation of China (Grant No. 21302122) and the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13ZR1416600).

  10. Hybrid resonant organic-inorganic nanostructures for novel light emitting devices and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Agranovich, Vladimir M. [Institute of Spectroscopy, Russian Academy of Science, Troitsk, Moscow (Russian Federation); Chemistry Department, University of Texas at Dallas, Texas (United States); Rupasov, Valery I. [ANTEOS, Inc., Shrewsbury, Massachusetts 01545 (United States); Silvestri, Leonardo [Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

    2010-06-15

    The energy transfer from an inorganic layer to an organic component of resonant hybrid organic/inorganic nanos-tructures can be used for creation of new type of LED. We mentioned the problem of electrical pumping which has to be solved. As was first suggested in 1979 by Dexter the transfer energy in opposite direction from organic part of nanostructure to semiconductor layer can be used for the creation of new type of solar cells. In this note we stress the importance of the idea by Dexter for photovoltaics and solar cells. We argue that the organic part in such hybrid structures can play a role of an effective organic collector of the light energy (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Hybrid white organic light-emitting devices based on phosphorescent iridium-benzotriazole orange-red and fluorescent blue emitters

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Zhen-Yuan, E-mail: xiazhenyuan@hotmail.com [Key Laboratory for Advanced Materials and Institute of Fine Chemicals, East China University of Science and Technology, Shanghai 200237 (China); Su, Jian-Hua [Key Laboratory for Advanced Materials and Institute of Fine Chemicals, East China University of Science and Technology, Shanghai 200237 (China); Chang, Chi-Sheng; Chen, Chin H. [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan 300 (China)

    2013-03-15

    We demonstrate that high color purity or efficiency hybrid white organic light-emitting devices (OLEDs) can be generated by integrating a phosphorescent orange-red emitter, bis[4-(2H-benzotriazol-2-yl)-N,N-diphenyl-aniline-N{sup 1},C{sup 3}] iridium acetylacetonate, Ir(TBT){sub 2}(acac) with fluorescent blue emitters in two different emissive layers. The device based on deep blue fluorescent material diphenyl-[4-(2-[1,1 Prime ;4 Prime ,1 Double-Prime ]terphenyl-4-yl-vinyl)-phenyl]-amine BpSAB and Ir(TBT){sub 2}(acac) shows pure white color with the Commission Internationale de L'Eclairage (CIE) coordinates of (0.33,0.30). When using sky-blue fluorescent dopant N,N Prime -(4,4 Prime -(1E,1 Prime E)-2,2 Prime -(1,4-phenylene)bis(ethene-2,1-diyl) bis(4,1-phenylene))bis(2-ethyl-6-methyl-N-phenylaniline) (BUBD-1) and orange-red phosphor with a color-tuning phosphorescent material fac-tris(2-phenylpyridine) iridium (Ir(ppy){sub 3} ), it exhibits peak luminance yield and power efficiency of 17.4 cd/A and 10.7 lm/W, respectively with yellow-white color and CIE color rendering index (CRI) value of 73. - Highlights: Black-Right-Pointing-Pointer An iridium-based orange-red phosphor Ir(TBT){sub 2}(acac) was applied in hybrid white OLEDs. Black-Right-Pointing-Pointer Duel- and tri-emitter WOLEDs were achieved with either high color purity or efficiency performance. Black-Right-Pointing-Pointer Peak luminance yield of tri-emitter WOLEDs was 17.4 cd/A with yellow-white color and color rendering index (CRI) value of 73.

  12. Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

    DEFF Research Database (Denmark)

    Kopylov, Oleksii

    This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time...

  13. Organic bistable light-emitting devices

    Science.gov (United States)

    Ma, Liping; Liu, Jie; Pyo, Seungmoon; Yang, Yang

    2002-01-01

    An organic bistable device, with a unique trilayer structure consisting of organic/metal/organic sandwiched between two outmost metal electrodes, has been invented. [Y. Yang, L. P. Ma, and J. Liu, U.S. Patent Pending, U.S. 01/17206 (2001)]. When the device is biased with voltages beyond a critical value (for example 3 V), the device suddenly switches from a high-impedance state to a low-impedance state, with a difference in injection current of more than 6 orders of magnitude. When the device is switched to the low-impedance state, it remains in that state even when the power is off. (This is called "nonvolatile" phenomenon in memory devices.) The high-impedance state can be recovered by applying a reverse bias; therefore, this bistable device is ideal for memory applications. In order to increase the data read-out rate of this type of memory device, a regular polymer light-emitting diode has been integrated with the organic bistable device, such that it can be read out optically. These features make the organic bistable light-emitting device a promising candidate for several applications, such as digital memories, opto-electronic books, and recordable papers.

  14. Silicon Light Emitting Devices in CMOS Technology

    Institute of Scientific and Technical Information of China (English)

    CHEN Hong-Da; LIU Hai-Jun; LIU Jin-Bin; GU Ming; HUANG Bei-Ju

    2007-01-01

    @@ Two silicon light emitting devices with different structures are realized in standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6nW and 12.1 nW are measured at 10 V and 100 mA, respectively, and both the calculated light emission intensities are more than 1 mW/cm2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm.

  15. Solution-processed hybrid light emitting and photovoltaic devices comprising zinc oxide nanorod arrays and tungsten trioxide layers

    Directory of Open Access Journals (Sweden)

    Wei-Chi Chen

    2017-04-01

    Full Text Available The goal of this research is to prepare inverted optoelectronic devices with improved performance by combining zinc oxide (ZnO nanorod arrays and tungsten trioxide (WO3 layer. ZnO seed layers with thickness of 52 nm were established, followed by growth of ZnO nanorods with length of 300 nm vertical to the ITO substrates in the precursor bath. The ZnO nanorod arrays possess high transmittance up to 92% in the visible range. Inverted light-emitting devices with the configuration of ITO/ZnO nanorods/ionic PF/MEH-PPV/PEDOT:PSS/Au were constructed. The best device achieved a max brightness and current efficiency of 10,620 cd/m2 and 0.25 cd/A at 10 V, respectively, revealing much higher brightness compared with conventional devices using Ca/Al as cathode, or inverted devices based on ZnO thin film. By inserting a WO3 thin layer between PEDOT:PSS and Au electrode, the max brightness and current efficiency were further improved to 21,881 cd/m2 and 0.43 cd/A, respectively. Inverted polymer solar cells were also fabricated with the configuration of ITO/ZnO nanorods/ionic PF/P3HT:PC61BM/PEDOT/WO3/Au. The best device parameters, including the open-circuit voltage, short-circuit current density, fill factor, and power conversion efficiency, reached 0.54 V, 14.87 mA/cm2, 41%, and 3.31%, respectively

  16. Light emitting device having peripheral emissive region

    Science.gov (United States)

    Forrest, Stephen R

    2013-05-28

    Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

  17. Principles of phosphorescent organic light emitting devices.

    Science.gov (United States)

    Minaev, Boris; Baryshnikov, Gleb; Agren, Hans

    2014-02-07

    Organic light-emitting device (OLED) technology has found numerous applications in the development of solid state lighting, flat panel displays and flexible screens. These applications are already commercialized in mobile phones and TV sets. White OLEDs are of especial importance for lighting; they now use multilayer combinations of organic and elementoorganic dyes which emit various colors in the red, green and blue parts of the visible spectrum. At the same time the stability of phosphorescent blue emitters is still a major challenge for OLED applications. In this review we highlight the basic principles and the main mechanisms behind phosphorescent light emission of various classes of photofunctional OLED materials, like organic polymers and oligomers, electron and hole transport molecules, elementoorganic complexes with heavy metal central ions, and clarify connections between the main features of electronic structure and the photo-physical properties of the phosphorescent OLED materials.

  18. Colloidal quantum dot light-emitting devices

    Directory of Open Access Journals (Sweden)

    Vanessa Wood

    2010-07-01

    Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

  19. Carrier recombination spatial transfer by reduced potential barrier causes blue/red switchable luminescence in C8 carbon quantum dots/organic hybrid light-emitting devices

    Directory of Open Access Journals (Sweden)

    Xifang Chen

    2016-04-01

    Full Text Available The underlying mechanism behind the blue/red color-switchable luminescence in the C8 carbon quantum dots (CQDs/organic hybrid light-emitting devices (LEDs is investigated. The study shows that the increasing bias alters the energy-level spatial distribution and reduces the carrier potential barrier at the CQDs/organic layer interface, resulting in transition of the carrier transport mechanism from quantum tunneling to direct injection. This causes spatial shift of carrier recombination from the organic layer to the CQDs layer with resultant transition of electroluminescence from blue to red. By contrast, the pure CQDs-based LED exhibits green–red electroluminescence stemming from recombination of injected carriers in the CQDs.

  20. Novel Na(+) doped Alq3 hybrid materials for organic light-emitting diode (OLED) devices and flat panel displays.

    Science.gov (United States)

    Bhagat, S A; Borghate, S V; Kalyani, N Thejo; Dhoble, S J

    2015-05-01

    Pure and Na(+) -doped Alq3 complexes were synthesized by a simple precipitation method at room temperature, maintaining a stoichiometric ratio. These complexes were characterized by X-ray diffraction, Fourier transform infrared (FTIR), UV/Vis absorption and photoluminescence (PL) spectra. The X-ray diffractogram exhibits well-resolved peaks, revealing the crystalline nature of the synthesized complexes, FTIR confirms the molecular structure and the completion of quinoline ring formation in the metal complex. UV/Vis absorption and PL spectra of sodium-doped Alq3 complexes exhibit high emission intensity in comparison with Alq3 phosphor, proving that when doped in Alq3 , Na(+) enhances PL emission intensity. The excitation spectra of the synthesized complexes lie in the range 242-457 nm when weak shoulders are also considered. Because the sharp excitation peak falls in the blue region of visible radiation, the complexes can be employed for blue chip excitation. The emission wavelength of all the synthesized complexes lies in the bluish green/green region ranging between 485 and 531 nm. The intensity of the emission wavelength was found to be elevated when Na(+) is doped into Alq3 . Because both the excitation and emission wavelengths fall in the visible region of electromagnetic radiation, these phosphors can also be employed to improve the power conversion efficiency of photovoltaic cells by using the solar spectral conversion principle. Thus, the synthesized phosphors can be used as bluish green/green light-emitting phosphors for organic light-emitting diodes, flat panel displays, solid-state lighting technology - a step towards the desire to reduce energy consumption and generate pollution free light.

  1. Solution-Processed Hybrid Light-Emitting Devices Comprising TiO2 Nanorods and WO3 Layers as Carrier-Transporting Layers

    OpenAIRE

    Tsai, Tsung-Yan; Yan, Po-Ruei; Yang, Sheng-Hsiung

    2016-01-01

    The goal of this research is to prepare inverted light-emitting devices with improved performance by combining titanium dioxide (TiO2) nanorods and tungsten trioxide (WO3) layer. TiO2 nanorods with different lengths were established directly on the fluorine-doped tin oxide (FTO) substrates by the hydrothermal method. The prepared TiO2 nanorods with lengths shorter than 200 nm possess transmittance higher than 80% in the visible range. Inverted light-emitting devices with the configuration of ...

  2. High mobility solution-processed hybrid light emitting transistors

    Energy Technology Data Exchange (ETDEWEB)

    Walker, Bright; Kim, Jin Young [School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B., E-mail: e.namdas@uq.edu.au, E-mail: seojh@dau.ac.kr [Centre for Organic Photonics and Electronics, University of Queensland, Brisbane, Queensland 4072 (Australia); Chae, Gil Jo [Department of Materials Physics, Dong-A University, Busan 604-714 (Korea, Republic of); Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Cho, Shinuk [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Seo, Jung Hwa, E-mail: e.namdas@uq.edu.au, E-mail: seojh@dau.ac.kr [Department of Materials Physics, Dong-A University, Busan 604-714 (Korea, Republic of)

    2014-11-03

    We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm{sup 2}/V s, current on/off ratios of >10{sup 7}, and external quantum efficiency of 10{sup −2}% at 2100 cd/m{sup 2}. These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective.

  3. Efficient semiconductor light-emitting device and method

    Science.gov (United States)

    Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

    1996-01-01

    A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

  4. Towards fully spray coated organic light emitting devices

    OpenAIRE

    GILISSEN, Koen; STRYCKERS, Jeroen; Manca, Jean; DEFERME, Wim

    2014-01-01

    Pi-conjugated polymer light emitting devices have the potential to be the next generation of solid state lighting. In order to achieve this goal, a low cost, efficient and large area production process is essential. Polymer based light emitting devices are generally deposited using techniques based on solution processing e.g.: spin coating, ink jet printing. These techniques are not well suited for cost-effective, high throughput, large area mass production of these organic devices. Ultrasoni...

  5. Recent Advances in Conjugated Polymers for Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Mohan Raja

    2011-03-01

    Full Text Available A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

  6. Recent advances in conjugated polymers for light emitting devices.

    Science.gov (United States)

    Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

  7. Solution-Processed Hybrid Light-Emitting Devices Comprising TiO2 Nanorods and WO3 Layers as Carrier-Transporting Layers

    Science.gov (United States)

    Tsai, Tsung-Yan; Yan, Po-Ruei; Yang, Sheng-Hsiung

    2016-11-01

    The goal of this research is to prepare inverted light-emitting devices with improved performance by combining titanium dioxide (TiO2) nanorods and tungsten trioxide (WO3) layer. TiO2 nanorods with different lengths were established directly on the fluorine-doped tin oxide (FTO) substrates by the hydrothermal method. The prepared TiO2 nanorods with lengths shorter than 200 nm possess transmittance higher than 80% in the visible range. Inverted light-emitting devices with the configuration of FTO/TiO2 nanorods/ionic PF/MEH-PPV/PEDOT:PSS/WO3/Au were constructed. The best device based on 100-nm-height TiO2 nanorods achieved a max brightness of 4493 cd/m2 and current efficiency of 0.66 cd/A, revealing much higher performance compared with those using TiO2 compact layer or nanorods with longer lengths as electron-transporting layers.

  8. Silicon light-emitting diode antifuse: properties and devices

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.

    2006-01-01

    This paper reviews our research on the silicon light-emitting diode antifuse, a tiny source featuring a full white-light spectrum. Optical and electrical properties of the device are discussed together with the modelling of the spectral emission, explaining the emitting mechanism of the device. An e

  9. Laminated active matrix organic light-emitting devices

    Science.gov (United States)

    Liu, Hongyu; Sun, Runguang

    2008-02-01

    Laminated active matrix organic light-emitting device (AMOLED) realizing top emission by using bottom-emitting organic light-emitting diode (OLED) structure was proposed. The multilayer structure of OLED deposited in the conventional sequence is not on the thin film transistor (TFT) backplane but on the OLED plane. The contact between the indium tin oxide (ITO) electrode of TFT backplane and metal cathode of OLED plane is implemented by using transfer electrode. The stringent pixel design for aperture ratio of the bottom-emitting AMOLED, as well as special technology for the top ITO electrode of top-emitting AMOLED, is unnecessary in the laminated AMOLED.

  10. Device Physics of White Polymer Light-Emitting Diodes

    NARCIS (Netherlands)

    Nicolai, Herman T.; Hof, Andre; Blom, Paul W. M.

    2012-01-01

    The charge transport and recombination in white-emitting polymer light- emitting diodes (PLEDs) are studied. The PLED investigated has a single emissive layer consisting of a copolymer in which a green and red dye are incorporated in a blue backbone. From single-carrier devices the effect of the gre

  11. White organic light-emitting devices with mixed interfaces between light emitting layers

    Science.gov (United States)

    Lee, Young Gu; Kee, In Seo; Shim, Hong Shik; Ko, Ick Hwan; Lee, Soonil; Koh, Ken Ha

    2007-06-01

    White organic light-emitting devices with mixed interfaces between emitting layers (MI-EML WOLEDs) showed luminance and efficiency as large as 26213cd/m2 and 9.85cd/A. Efficiencies of MI-EML WOLEDs were about 1.5 times better than those of conventional three-EML WOLEDs for luminance of 1000-5000cd/m2, and their half-decay lifetime showed 3.1 times improvement. Note that if the authors operate typical active-matrix mobile-phone displays based on combination of WOLED and color filters to produce standard white emission for high definition televisions and illumination sources, MI-EML WOLEDs will have advantages of 25% less power consumption and 2.8 times longer lifetime over conventional three-EML WOLEDs.

  12. Concave-hemisphere-patterned organic top-light emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Forrest, Stephen R.; Slootsky, Michael; Lunt, Richard

    2015-06-09

    A first device is provided. The first device includes an organic light emitting device, which further comprises a first electrode, a second electrode, and an organic emissive layer disposed between the first and second electrode. Preferably, the second electrode is more transparent than the first electrode. The organic emissive layer has a first portion shaped to form an indentation in the direction of the first electrode, and a second portion shaped to form a protrusion in the direction of the second electrode. The first device may include a plurality of organic light emitting devices. The indentation may have a shape that is formed from a partial sphere, a partial cylinder, a pyramid, or a pyramid with a mesa, among others. The protrusions may be formed between adjoining indentations or between an indentation and a surface parallel to the substrate.

  13. Si light-emitting device in integrated photonic CMOS ICs

    Science.gov (United States)

    Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

    2017-07-01

    The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

  14. Numerical model of multilayer organic light-emitting devices

    Institute of Scientific and Technical Information of China (English)

    Hu Yue; Rao Hai-Bo

    2009-01-01

    A numerical model of multilayer organic light-emitting devices is presented in this article.This model is based on the drift-diffusion equations which include charge injection,transport,space charge effects,trapping,heterojunction interface and recombination process.The device structure in the simulation is ITO/CuPc(20 nm)/NPD(40 nm)/Alq3(60 nm)/LiF/Al.There are two heterojunctions which should be dealt with in the simulation.The Ⅰ-Ⅴ characteristics,carrier distribution and recombination rate of a device are calculated.The simulation results and measured data are in good agreement.

  15. Dispositivos poliméricos eletroluminescentes Polymeric light emitting devices

    Directory of Open Access Journals (Sweden)

    Hueder P. M. de Oliveira

    2006-04-01

    Full Text Available Here we present an overview of electroluminescent devices that use conjugated polymers as the active media. The principal components of the devices are described and we show some examples of conjugated polymers and copolymers usually employed in polymeric light emitting devices (PLED. Some aspects of the photo and electroluminescence properties as well as of the energy transfer processes are discussed. As an example, we present some of the photophysical properties of poly(fluorenes, a class of conjugated polymers with blue emission.

  16. Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

    Science.gov (United States)

    Zhang, Congcong; Chen, Penglei; Hu, Wenping

    2016-03-09

    Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.

  17. Capturing triplet emission in white organic light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [Faculty of EHSE, School of Engineering and IT, B-purple-12, Charles Darwin University, Darwin, NT 0909 (Australia)

    2011-08-15

    The state-of-the art in the white organic light emitting devices (WOLEDs) is reviewed for further developments with a view to enhance the capture of triplet emission. In particular, applying the new exciton-spin-orbit-photon interaction operator as a perturbation, rates of spontaneous emission are calculated in a few phosphorescent materials and compared with experimental results. For iridium based phosphorescent materials the rates agree quite well with the experimental results. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Smartphone-Driven Low-Power Light-Emitting Device

    Directory of Open Access Journals (Sweden)

    Hea-Ja An

    2017-01-01

    Full Text Available Low-level light (laser therapy (LLLT has been widely researched in the recent past. Existing LLLT studies were performed based on laser. Recently, studies using LED have increased. This study presents a smartphone-driven low-power light-emitting device for use in colour therapy as an alternative medicine. The device consists of a control unit and a colour probe. The device is powered by and communicates with a smartphone using USB On-The-Go (OTG technology. The control unit controls emitting time and intensity of illumination with the configuration value of a smartphone application. Intensity is controlled by pulse width modulation (PWM without feedback. A calibration is performed to resolve a drawback of no feedback. To calibrate, intensity is measured in every 10 percent PWM output. PWM value is linearly calibrated to obtain accurate intensity. The device can control the intensity of illumination, and so, it can find application in varied scenarios.

  19. Light collection optics for measuring flux and spectrum from light-emitting devices

    Science.gov (United States)

    McCord, Mark A.; DiRegolo, Joseph A.; Gluszczak, Michael R.

    2016-05-24

    Systems and methods for accurately measuring the luminous flux and color (spectra) from light-emitting devices are disclosed. An integrating sphere may be utilized to directly receive a first portion of light emitted by a light-emitting device through an opening defined on the integrating sphere. A light collector may be utilized to collect a second portion of light emitted by the light-emitting device and direct the second portion of light into the integrating sphere through the opening defined on the integrating sphere. A spectrometer may be utilized to measure at least one property of the first portion and the second portion of light received by the integrating sphere.

  20. Tailor-made directional emission in nanoimprinted plasmonic-based light-emitting devices

    Science.gov (United States)

    Lozano, G.; Grzela, G.; Verschuuren, M. A.; Ramezani, M.; Rivas, J. Gómez

    2014-07-01

    We demonstrate an enhanced and tailor-made directional emission of light-emitting devices using nanoimprinted hexagonal arrays of aluminum nanoparticles. Fourier microscopy reveals that the luminescence of the device is not only determined by the material properties of the organic dye molecules but is also strongly influenced by the coherent scattering resulting from periodically arranged metal nanoparticles. Emitters can couple to lattice-induced hybrid plasmonic-photonic modes sustained by plasmonic arrays. Such modes enhance the spatial coherence of an emitting layer, allowing the efficient beaming of the emission along narrow angular and spectral ranges. We show that tailoring the separation of the nanoparticles in the array yields an accurate angular distribution of the emission. This combination of large-area metal nanostructures fabricated by nanoimprint lithography and light-emitting devices is beneficial for the design and optimization of solid-state lighting systems.

  1. Specifics and Challenges to Flexible Organic Light-Emitting Devices

    Directory of Open Access Journals (Sweden)

    Mariya Aleksandrova

    2016-01-01

    Full Text Available Several recent developments in material science and deposition methods for flexible organic light-emitting devices (OLEDs are surveyed. The commonly used plastic substrates are compared, according to their mechanical, optical, thermal, and chemical properties. Multilayer electrode structures, used as transparent electrodes, replacing conventional indium tin oxide (ITO are presented and data about their conductivity, transparency, and bending ability are provided. Attention is paid to some of the most popular industrial processes for flexible OLEDs manufacturing, such as roll-to-roll printing, inkjet printing, and screen printing. Main specifics and challenges, related to the foils reliability, mechanical stability of the transparent electrodes, and deposition and patterning of organic emissive films, are discussed.

  2. Hybrid light emitting diodes based on solution processed polymers, colloidal quantum dots, and colloidal metal nanoparticles

    Science.gov (United States)

    Ma, Xin

    This dissertation focuses on solution-processed light-emitting devices based on polymer, polymer/PbS quantum dot, and polymer/silver nanoparticle hybrid materials. Solution based materials and organic/inorganic hybrid light emitting diodes attracted significant interest recently due to many of their advantages over conventional light emitting diodes (LEDs) including low fabrication cost, flexible, high substrate compatibility, as well as tunable emission wavelength of the quantum dot materials. However, the application of these novel solution processed materials based devices is still limited due to their low performances. Material properties and fabrication parameters need to be carefully examined and understood for further device improvement. This thesis first investigates the impact of solvent property and evaporation rate on the polymer molecular chain morphology and packaging in device structures. Solvent is a key component to make the active material solution for spin coating fabrication process. Their impacts are observed and examined on both polymer blend system and mono-polymer device. Secondly, PbS colloidal quantum dot are introduced to form hybrid device with polymer and to migrate the device emission into near-IR range. As we show, the dithiol molecules used to cross-link quantum dots determine the optical and electrical property of the resulting thin films. By choosing a proper ligand for quantum dot ligand exchange, a high performance polymer/quantum dot hybrid LED is fabricated. In the end, the interaction of polymer exciton with surface plasmon mode in colloidal silver nanoparticles and the use of this effect to enhance solution processed LEDs' performances are investigated.

  3. Device Architecture and Materials for Organic Light-Emitting Devices Targeting High Current Densities and Control of the Triplet Concentration

    CERN Document Server

    Schols, Sarah

    2011-01-01

    Device Architecture and Materials for Organic Light-Emitting Devices focuses on the design of new device and material concepts for organic light-emitting devices, thereby targeting high current densities and an improved control of the triplet concentration. A new light-emitting device architecture, the OLED with field-effect electron transport, is demonstrated. This device is a hybrid between a diode and a field-effect transistor. Compared to conventional OLEDs, the metallic cathode is displaced by one to several micrometers from the light-emitting zone, reducing optical absorption losses. The electrons injected by the cathode accumulate at an organic heterojunction and are transported to the light-emission zone by field-effect. High mobilities for charge carriers are achieved in this way, enabling a high current density and a reduced number of charge carriers in the device. Pulsed excitation experiments show that pulses down to 1 µs can be applied to this structure without affecting the light intensity, sug...

  4. A standardized light-emitting diode device for photoimmunotherapy.

    Science.gov (United States)

    de Boer, Esther; Warram, Jason M; Hartmans, Elmire; Bremer, Peter J; Bijl, Ben; Crane, Lucia M A; Nagengast, Wouter B; Rosenthal, Eben L; van Dam, Gooitzen M

    2014-11-01

    Antibody-based photodynamic therapy-photoimmunotherapy (PIT)-is an ideal modality to improve cancer treatment because of its selective and tumor-specific mode of therapy. Because the use of PIT for cancer treatment is continuing to be described, there is great need to characterize a standardized light source for PIT application. In this work, we designed and manufactured a light-emitting diode (LED)/PIT device and validated the technical feasibility, applicability, safety, and consistency of the system for cancer treatment. To outline the characteristics and photobiologic safety of the LED device, multiple optical measurements were performed in accordance with a photobiologic safety standard. A luciferase-transfected breast cancer cell line (2LMP-Luc) in combination with panitumumab-IRDye 700DX (pan-IR700) was used to validate the in vitro and in vivo performance of our LED device. Testing revealed the light source to be safe, easy to use, and independent of illumination and power output (mW cm(-2)) variations over time. For in vitro studies, an LED dose (2, 4, 6 J cm(-2))-dependent cytotoxicity was observed using propidium iodide exclusion and annexin V staining. Dose-dependent blebbing was also observed during microscopic analysis. Bioluminescence signals of tumors treated with 0.3 mg of pan-IR700 and 50 J cm(-2) decreased significantly (>80%) compared with signals of contralateral nontreated sites at 4 h and at 1 d after PIT. To our knowledge, a normalized and standardized LED device has not been explicitly described or developed. In this article, we introduce a standardized light source and validate its usability for PIT applications. © 2014 by the Society of Nuclear Medicine and Molecular Imaging, Inc.

  5. Using Organic Light-Emitting Electrochemical Thin-Film Devices to Teach Materials Science

    Science.gov (United States)

    Sevian, Hannah; Muller, Sean; Rudmann, Hartmut; Rubner, Michael F.

    2004-01-01

    Materials science can be taught by applying organic light-emitting electrochemical thin-film devices and in this method students were allowed to make a light-emitting device by spin coating a thin film containing ruthenium (II) complex ions onto a glass slide. Through this laboratory method students are provided with the opportunity to learn about…

  6. Photon extraction from nitride ultraviolet light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

    2015-02-24

    In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

  7. Characterization of Polyaniline Based Polymer Light-Emitting Devices During Operation by Electrical Impedance Spectroscopy

    Science.gov (United States)

    2004-07-01

    regions. 2. Experimental The light-emitting devices were prepared by Covion by spin coating and curing a 80 nm layer of Pani/PSS as HIL onto indium...tin oxide (ITO) patterned glass substrates followed by spin coating of the 80 nm light-emitting polymer layer. A water based Pani/PSS dispersion

  8. Green route synthesis of high quality CdSe quantum dots for applications in light emitting devices

    Science.gov (United States)

    Bera, Susnata; Singh, Shashi B.; Ray, S. K.

    2012-05-01

    Investigation was made on light emitting diodes fabricated using CdSe quantum dots. CdSe quantum dots were synthesized chemically using olive oil as the capping agent, instead of toxic phosphine. Room temperature photoluminescence investigation showed sharp 1st excitonic emission peak at 568 nm. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting devices were fabricated by solution process. The electroluminescence study showed low turn on voltage (˜2.2 V) .The EL peak intensity was found to increase by increasing the operating current.

  9. A Device Model for Polymer Light-Emitting Diodes with Mobile Ions

    NARCIS (Netherlands)

    Jong, M.J.M. de; Blom, P.W.M.

    1996-01-01

    A model is presented for the device operation of a polymer light-emitting diode (PLED) with mobile ions. It is calculated that the low efficiency of a PLED with a high injection barrier increases as the ions migrate.

  10. Effect of Heat Treatment on Luminescent Properties of White Organic Light Emitting Device

    Institute of Scientific and Technical Information of China (English)

    LI Juan; HUA Yu-lin; WANG Chang-sheng; XIONG Shao-zhen

    2004-01-01

    The white organic light emitting device (OLED) with single-structure using a polymer blend as the light emitting layer is fabricated. Heat treatment is used to control the ratio between the intensities of main electroluminescent spectral peaks. The electroluminescent spectrum of our device is quite similar to that of white inorganic LED produced by Nichia Corporation after being annealed, and its turn-on voltage can be decreased by 1 V.

  11. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    Energy Technology Data Exchange (ETDEWEB)

    Lijuan Zou

    2003-08-05

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

  12. Efficient light emitting devices based on phosphorescent partially doped emissive layers

    KAUST Repository

    Yang, Xiaohui

    2013-05-29

    We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices with the emissive layer consisting of multiple platinum-complex/spacer layer cells show a peak external quantum efficiency of 18.1%, which is among the best EQE values for platinum-complex based light emitting devices. Devices with an ultrathin phosphor emissive layer show stronger luminance decay with the operating time compared to the counterpart devices having a host-guest emissive layer.

  13. Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes

    Science.gov (United States)

    Caruso, Fulvio; Mosca, Mauro; Rinella, Salvatore; Macaluso, Roberto; Calì, Claudio; Saiano, Filippo; Feltin, Eric

    2016-01-01

    We report on the properties of a poly(methyl methacrylate)-based coating used as a host for an organic dye in hybrid white light-emitting diodes. The device is composed by a pump source, which is a standard inorganic GaN/InGaN blue light-emitting diode (LED) emitting at around 450 nm, and a spin-coated conversion layer making use of Lumogen® F Yellow 083. Under prolonged irradiation, the coating exhibits significant bleaching, thus degrading the color rendering performance of the LED. We present experimental results that confirm that the local temperature rise of the operating diode does not affect the conversion layer. It is also proven that, during the test, the photostability of the organic dye is compromised, resulting in a chromatic shift from Commission Internationale de l'Eclairage (CIE) ( x; y) coordinates (0.30;0.39) towards the color of the pump (0.15;0.04). Besides photodegradation of the dye, we address a phenomenon attributed to modification of the polymer matrix activated by the LED's blue light energy as confirmed by ultraviolet-visible and Fourier-transform infrared spectroscopic analyses. Three methods for improving the overall stability of the organic coating are presented.

  14. Efficient Hybrid White Organic Light-Emitting Diodes for Application of Triplet Harvesting with Simple Structure

    CERN Document Server

    Hwang, Kyo Min; Lee, Sungkyu; Yoo, Han Kyu; Baek, Hyun Jung; Kim, Jwajin; Yoon, Seung Soo; Kim, Young Kwan

    2016-01-01

    In this study, we fabricated hybrid white organic light-emitting diodes (WOLEDs) based on triplet harvesting with simple structure. All the hole transporting material and host in emitting layer (EML) of devices were utilized with same material by using N,N'-di-1-naphthalenyl-N,N'-diphenyl-[1,1':4',1":4",1"'-quaterphenyl]-4,4"'-diamine (4P-NPD) which were known to be blue fluorescent material. Simple hybrid WOLEDs were fabricated three color with blue fluorescent and green, red phosphorescent materials. We was investigated the effect of triplet harvesting (TH) by exciton generation zone on simple hybrid WOLEDs. Characteristic of simple hybrid WOLEDs were dominant hole mobility, therefore exciton generation zone was expected in EML. Additionally, we was optimization thickness of hole transporting layer and electron transporting layer was fabricated a simple hybrid WOLEDs. Simple hybrid WOLED exhibits maximum luminous efficiency of 29.3 cd/A and maximum external quantum efficiency of 11.2%. Commission Internatio...

  15. Hybrid tunnel junction contacts to III-nitride light-emitting diodes

    Science.gov (United States)

    Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

    2016-02-01

    In this work, we demonstrate highly doped GaN p-n tunnel junction (TJ) contacts on III-nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10-4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a (20\\bar{2}\\bar{1}) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

  16. Hybrid tunnel junction contacts to III–nitride light-emitting diodes

    KAUST Repository

    Young, Erin C.

    2016-01-26

    In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

  17. Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

    NARCIS (Netherlands)

    LeMinh, P.; Holleman, J.; Berenschot, J.W.; Tas, N.R.; Berg, van den A.

    2002-01-01

    Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. In this chapter, the devi

  18. Monolithic Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

    NARCIS (Netherlands)

    LeMinh, P.; Holleman, J.; Berenschot, J.W.; Tas, N.R.; Berg, van den A.

    2002-01-01

    Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution,

  19. Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

    CERN Document Server

    Ohtsu, Motoichi

    2016-01-01

    This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

  20. Organic Light-Emitting Device Based on Terbium Complex

    Institute of Scientific and Technical Information of China (English)

    Xu Ying; Deng Zhenbo; Xu Denghui; Xiao Jing; Wang Ruifen

    2005-01-01

    A new rare earth complex Tb(p-MBA)3phen was synthesized, which is first used as an emitting material in organic electroluminescence. By doping it into the conjugated polymer PVK, single-layer and double-layer devices were fabricated with structures: device 1: ITO/PVK∶ Tb(p-MBA)3phen/Al; device 2∶ ITO/PVK: Tb(p-MBA)3phen/AlQ/LiF/Al. The characteristics of these devices have been investigated. The emission of PVK is completely restrained, and only the pure green emission from Tb3+ can be observed in electroluminescence. The optimized device 2 has better monochromatic characteristics with the maximal brightness of 152 cd · m-2 at the voltage of 20 V.

  1. Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes.

    Science.gov (United States)

    Wang, Liancheng; Cheng, Yan; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong

    2016-01-20

    Graphene transparent conductive electrode (TCE) applications in nitride light emitting diodes (LEDs) are still limited by the large contact resistance and interface barrier between graphene and p-GaN. We propose a hybrid tunnel junction (TJ)-graphene TCE approach for nitride lateral LEDs theoretically and experimentally. Through simulation using commercial advanced physical models of semiconductor devices (APSYS), we found that low tunnel resistance can be achieved in the n(+)-GaN/u-InGaN/p(+)-GaN TJ, which has a lower tunneling barrier and an enhanced electric field due to the polarization effect. Graphene TCEs and hybrid graphene-TJ TCEs are then modeled. The designed hybrid TJ-graphene TCEs show sufficient current diffusion length (Ls), low introduced series resistance, and high transmittance. The assembled TJ LED with the triple-layer graphene (TLG) TCEs show comparable optoelectrical performance (3.99 V@20 mA, LOP = 10.8 mW) with the reference LED with ITO TCEs (3.36 V@20 mA, LOP = 12.6 mW). The experimental results further prove that the TJ-graphene structure can be successfully incorporated as TCEs for lateral nitride LEDs.

  2. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    CERN Document Server

    Li Juan Zo

    2003-01-01

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm sup 2 , the optimal radiance R could reach 0.38 mW/cm sup 2 , and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be approx 10 sup - sup 5 cm sup 2 /Vs and approx 10 sup - sup 4 cm sup 2 /Vs, respectively. Overshoot effects...

  3. Organic Light Emitting Devices Based on Terbium Complex

    Institute of Scientific and Technical Information of China (English)

    肖静; 邓振波; 张志锋; 徐登辉; 徐颖; 王瑞芬

    2004-01-01

    Rare earth complex TbY(m-MOBA)6(phen)2·2H2O was synthesized,which was first used as an emitting material in electroluminescence.The properties of monolayer device with the rate of 1000 r·min-1 (70 nm) and the impure concentration of 1∶5 were the best.And the highest brightness of this device reached 21.8 cd·cm-2 at a fixed bias of 20 V.Bright green emission can be obtained from the optimized double-layer device,and the highest EL brightness of the device reached 289 cd·m-2 at the voltage of 21 V.

  4. Organic Light Emitting Devices Based on Terbium Complex

    Institute of Scientific and Technical Information of China (English)

    Xiao Jing; Deng Zhenbo; Xu Denghui; Xu Ying; Wang Ruifen

    2005-01-01

    Rare earth complex Tb(BA)3phen was synthesized, which is first used as an emitting material in electroluminescence. The properties of monolayer device with the swing film rate of 1000 r·min-1(70 nm) and the weight ratio of 1:5(PVK:Tb(BA)3phen) are the best. And the highest brightness of this device reached 26.8 cd·cm-2 at a fixed bias of 21 V. Bright green emission could be obtained from the optimized double-layer device and the highest EL brightness of the device reached 322 cd·m-2 at the voltage of 22 V.

  5. Organic light emitting devices synthesis, properties and applications

    CERN Document Server

    Müllen, Klaus; Mllen, Klaus; Mü Llen, Klaus; Mullen, Klaus

    2006-01-01

    This high-class book reflects a decade of intense research, culminating in excellent successes over the last few years. The contributions from both academia as well as the industry leaders combine the fundamentals and latest research results with application know-how and examples of functioning displays. As a result, all the four important aspects of OLEDs are covered: - syntheses of the organic materials - physical theory of electroluminescence and device efficiency - device conception and construction - characterization of both materials and devices. The whole is naturally rounded off with a look at what the future holds in store. The editor, Klaus Muellen, is director of the highly prestigious MPI for polymer research in Mainz, Germany, while the authors include Nobel Laureate Alan Heeger, one of the most notable founders of the field, Richard Friend, as well as Ching Tang, Eastman Kodak's number-one OLED researcher, known throughout the entire community for his key publications.

  6. Unique Room Temperature Light Emitting Diode Based on 2D Hybrid Organic-Inorganic Low Dimensional Perovskite Semiconductor

    CERN Document Server

    Vassilakopoulou, Anastasia; Koutselas, Ioannis

    2016-01-01

    Room temperature single layer light emitting diode(LED), based on a two dimensional hybrid organic-inorganic semiconductor(HOIS), is demonstrated. This simple, low cost excitonic LED operates at low voltages. Such an excitonic device is presented for the first time as functioning at room temperature. The newly introduced class of perovskite LEDs, until now based on 3D perovksite HOIS, is now broadened with the implementation of the 2D HOIS. Novel functionalities can be realized since it is now possible to access the hybrid's 2D semiconductor advantageous properties, such as the increased excitonic peak wavelength tunability, excitonic binding energy and oscillator strength.

  7. Interband cascade light emitting devices based on type-II quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Rui Q.; Lin, C.H.; Murry, S.J. [Univ. of Houston, TX (United States). Space Vacuum Epitaxy Center] [and others

    1997-06-01

    The authors discuss physical processes in the newly developed type-II interband cascade light emitting devices, and review their recent progress in the demonstration of the first type-II interband cascade lasers and the observation of interband cascade electroluminescence up to room temperature in a broad mid-infrared wavelength region (extended to 9 {mu}m).

  8. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    Energy Technology Data Exchange (ETDEWEB)

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry

  9. Luminescent Enhancement of Heterostructure Organic Light-Emitting Devices Based on Aluminum Quinolines

    Institute of Scientific and Technical Information of China (English)

    Jun-Sheng Yu; Lu Li; Ya-Dong Jiang; Xing-Qiao Ji; Tao Wang

    2007-01-01

    High performance organic light-emitting devices (OLEDs) have been investigated by using fluorescent bis (2-methyl-8-quinolinolato)(para-phenyl-phenolato)aluminum(BAlq) as an emissive layer on the performance of multicolor devices consisting of N, N'-bis-(1-naphthyl)-N,N'diphenyI-l,l'-biphenyI-4,4'-diamine (NPB) as hole transport layer. The results show that the performance of heterostructure blue light-emitting device composed of 8-hydroxyquinoline aluminum (Alq3) as an electron transport layer has been dramatically enhanced. In the case of high performance heterostructure devices, the electroluminescent spectra has been perceived to vary strongly with the thickness of the organic layers due to the different recombination region, which indicates that various color devices composed of identical components could be implemented by changing the film thickness of different functional layers.

  10. Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.

    Science.gov (United States)

    Jung, Hyunchul; Chung, Wonkeun; Lee, Chang Hun; Kim, Sung Hyun

    2012-07-01

    White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.

  11. Influence of Energy Level Matching on Device Performances of Organic Light-emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    LIU Chen; ZOU Xue-cheng; YIN Sheng

    2004-01-01

    Through experiments and computer simulation, the influence of the energy levels of organic materials and electrode materials in the organic light-emitting diodes (OLEDs) on the device performances is discussed. Results show that the device performances are influenced by not only the carrier injection barriers at the electrode interface but also the barriers at the organic heterojunction interface. This result is helpful to the selection of the organic materials and their arrangement in the optimal design of OLEDs.

  12. Novel blue-light-emitting hybrid materials based on oligothiophene acids and ZnO

    Science.gov (United States)

    Jiu, Tonggang; Liu, Huibiao; Fu, Liming; He, Xiaorong; Wang, Ning; Li, Yuliang; Ai, Xicheng; Zhu, Daoben

    2004-11-01

    Novel blue-light-emitting materials based on ZnO and 2,2'-bithiophene-5,5'-dicarboxylic acid (DTDA), 4',3″-dipentyl-5,2': 5',2″: 5″,2‴-quaterthiophene-2,5‴-dicarboxylic acid (QTDA) have been prepared. The hybrid materials show that the PL λmax are at 450 and 425 nm for DTDA-ZnO and QTDA-ZnO, respectively.

  13. Substrate patterning for passive matrix organic light-emitting devices by photolithography processing

    Science.gov (United States)

    Wang, Jun; Yu, Jun-sheng; Lin, Hui; Lou, Shuang-ling; Jiang, Ya-dong

    2007-12-01

    The fabrication technology of high resolution substrate pattern for organic light-emitting devices (OLEDs) was discussed in the paper. Surface morphology and crystallization properties of ITO films and the shape of photolithography pattern were investigated. Experimental results show that three factors including deposition pressure, flow ratio of argon to oxygen and annealing temperature greatly influence the conductance of ITO film.. Some attempts about designing photomask were enumerated and the reverse taper angle separator was successfully fabricated with image reversal process.

  14. High efficiency tandem organic light-emitting devices with Al/WO3/Au interconnecting layer

    OpenAIRE

    2007-01-01

    An interconnecting layer of Al (2 nm)/WO3 (3 nm)/Au (16 nm) was studied for application in tandem organic light-emitting devices. It can be seen that the Al/WO3/Au structure plays the role of an excellent interconnecting layer. The introduction of WO3 in the connection unit significantly improves the device efficiency as compared to the case of Al/Au. Thus, the current efficiency of the two-unit tandem devices is enhanced by two factors with respect to the one-unit devices. The green two-u...

  15. Device Fabrication of 60 μm Resonant Cavity Light-Emitting Diode

    Directory of Open Access Journals (Sweden)

    J. J. C. Reyes

    2004-12-01

    Full Text Available An array of 60-mm-diameter resonant cavity light-emitting diodes suited for coupling with fiber opticwere fabricated using standard device fabrication technique. I-V characterization was used to determinethe viability of the device fabricating process. Under forward bias, the turn-on voltage of the devices is1.95–2.45 V with a series resistance of 17–14 kW. Under reverse bias, the devices showed a breakdownvoltage of 35 V.

  16. Highly efficient non-doped blue organic light emitting devices based on anthracene–pyridine derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Haykir, Gulcin; Tekin, Emine; Atalar, Taner; Türksoy, Figen

    2013-12-02

    Four different 2-(10-aryl)anthracen-9-yl)pyridine derivatives 5a–d were synthesized via the Suzuki cross-coupling reaction. Photo-physical characteristics of these materials having strong electron donating or electron withdrawing groups were explored. Multilayer small molecule organic light emitting diodes without any dopant were fabricated in the following sequence: Indium tin oxide/4,4′-bis(N-(1-naphthyl)-N-phenylamino)biphenyl (50 nm)/5a–d (30 nm)/4,7-diphenyl-1,10-phenanthroline (30 nm)/LiF/Al. The electroluminescent property of the device fabricated with 5d as an emitter exhibited a high external quantum efficiency of 3.80% (at around 1 mA/cm{sup 2}) with Commission Internationale De L'Eclairage coordinates of (0.14, 0.25). - Highlights: • Synthesis and characterization of 2-(10-aryl)anthracen-9-yl)pyridine derivatives • Thermal, photophysical and electrochemical properties of anthracene derivatives • Emitters from blue to greenish blue for organic light emitting device applications • Organic light emitting device fabrication and characterization of 2-(10-aryl)anthracen-9-yl)pyridine derivatives.

  17. White organic light-emitting device with both phosphorescent and fluorescent emissive layers

    Institute of Scientific and Technical Information of China (English)

    Zhang Li-Juan; Hun Yu-Lin; Wu Xiao-Ming; Wang Yu; Yin Shou-Geng

    2008-01-01

    This paper reports the fabrication of novel white organic light-emitting device(WOLED) by using a high efficiency blue fluorescent dye N-(4-((E)-2-(6-((E)-4-(diphenylamino)styryl)naphthalen-2-yl)vinyl)phenyl)-N-phenylbenzenamine (N-BDAVBi) and a red phosphoresecent dye bis (1-(phenyl) isoquinoline) iridium (Ⅲ) acety-lanetonate (Ir(piq)2(acac)). The configuration of the device was ITO/PVK:TPD/CBP: N-BDAVBi /CBP/ BALq:Ir(piq)2(acac)/BCP/Alq3/LiF:AL. By adjusting the proportion of the dopants (N-BDAVBi, Ir(piq)2(acac)) in the light-emitting layer, white light with Commission Internationale de l'Eclairage (CIE) coordinates of (0.35, 0.35) and a maximum luminance of 25350cd/m2 were obtained at an applied voltage of 22V. The WOLED exhibits maximum external quantum and current efficiency of 6.78% and 12ed/A respectively. By placing an undoped spacer CBP layer between the two light-emitting layers and using BCP as hole blocking layer, the colour stabilization slightly changed when the driving voltage increased from 6 to 22 V.

  18. Study on scalable Coulombic degradation for estimating the lifetime of organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Wenwen; Hou Xun [State Key Laboratory of Transient Optics and Photonics, Xi' an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi' an 710119 (China); Wu Zhaoxin; Liang Shixiong; Jiao Bo; Zhang Xinwen; Wang Dawei [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Key Laboratory of Photonics Technology for Information of ShaanXi Province, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Chen Zhijian; Gong Qihuang, E-mail: zhaoxinwu@mail.xjtu.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

    2011-04-20

    The luminance decays of organic light-emitting diodes (OLEDs) are investigated with initial luminance of 1000 to 20 000 cd m{sup -2} through a scalable Coulombic degradation and a stretched exponential decay. We found that the estimated lifetime by scalable Coulombic degradation deviates from the experimental results when the OLEDs work with high initial luminance. By measuring the temperature of the device during degradation, we found that the higher device temperatures will lead to instabilities of organic materials in devices, which is expected to result in the difference between the experimental results and estimation using the scalable Coulombic degradation.

  19. Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

    OpenAIRE

    2009-01-01

    Abstract We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO) nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene) (DBPPV). The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt%) before annealing (1.78 cd/A) and after annealing (2.45 cd/A) having a brightness 643 ...

  20. Efficient organic light-emitting devices with platinum-complex emissive layer

    KAUST Repository

    Yang, Xiaohui

    2011-01-18

    We report efficient organic light-emitting devices having a platinum-complex emissive layer with the peak external quantum efficiency of 17.5% and power efficiency of 45 lm W−1. Variation in the device performance with platinum-complex layer thickness can be attributed to the interplay between carrier recombination and intermolecular interactions in the layer. Efficient white devices using double platinum-complex layers show the external quantum efficiency of 10%, the Commission Internationale d’Énclairage coordinates of (0.42, 0.41), and color rendering index of 84 at 1000 cd m−2.

  1. Multicolor Emission from Poly(p-Phenylene)/Nanoporous ZnMnO Organic-Inorganic Hybrid Light-Emitting Diode.

    Science.gov (United States)

    Lee, Sejoon; Lee, Youngmin; Kim, Deuk Young; Panin, Gennady N

    2016-12-28

    The voltage-tunable multicolor emission was realized in a poly(p-phenylene)/nanoporous ZnMnO organic-inorganic hybrid light-emitting diode. Red, green, and blue (RGB) colors sequentially appeared with increasing magnitude of the bias voltage (i.e., R → RG → RGB with V↑). At a higher voltage (>2.4 V), eventually, the device emitted the visible light with a mixture of colors including RGB. These unique features may move us a step closer to the application of organic-inorganic hybrid solid-state lighting devices for the full-color display and/or the electrical-to-optical data converter for multivalue electronic signal processes. In-depth analyses on electrical and optical properties are presented, and voltage-controllable multicolor-emission mechanisms are discussed.

  2. Study on Microcavity Organic Light-emitting Devices Containing Negative Refractive Index Dielectric Layer

    Institute of Scientific and Technical Information of China (English)

    CAI Hong-xin; LI Li-xin

    2009-01-01

    A new structure containing negative refractive index dielectric layer(NRIDL) is introduced into microcavity.The properties of the new microcavity organic light-emitting devices(MOLEDs) are investigated.In the experiment,the transfer matrix method is adopted.The dependence of reflectance and transmittance on the refractive index and thickness of NRIDL are analyzed in detail.Compared with the electroluminescence spectra of non-NRIDL diodes,the line widths of the spectra of the MOLEDs are narrower and all the peaks enhance.The results show that the new structure is beneficial to improve the performance and reduce the thickness of microcavity devices.

  3. The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

    CERN Document Server

    Kwang Ohk Cheo

    2003-01-01

    Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either alpha-NPD or DPVBi host l...

  4. All-inorganic white light emitting devices based on ZnO nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Nannen, Ekaterina

    2012-09-21

    Semiconductor nanaocrystals (NCs) are very promising candidates for lightweight large-area rollable displays and light emitting devices (LEDs). They are expected to combine the efficiency, robustness and color tunability of conventional semiconductor LEDs with the flexible fabrication techniques known from OLED technology, since the NCs are compatible with solution processing and therefore can be deposited on virtually any substrates including glass and plastic. Today, NC-LEDs consist of chemically synthesized QDs embedded in organic charge injection and transport layers. The organic layers limit the robustness of the NC-LEDs and result in significant constrictions within the device fabrication procedure, such as organic evaporation steps, inert (i.e. humidity and oxygen free) atmosphere and obligatory encapsulation. These limitations during the production process as well as complex chemical synthesis route of the implemented NCs and organic components lead to high fabrication costs and low turnover. So far, only prototype devices have been introduced by several research groups and industrial companies. Still, the main concern retarding NC-LEDs from market launch is the high content of toxic heavy metals like Cd in the active nanocrystalline light emitting material. Within this work, possible environmentally safe and ambient-air-compatible alternatives to conventional QDs and organics were explored, with the main focus on design and fabrication of completely inorganic white NC-LEDs with commercial ZnO nanoparticles as an active light emitting material. While the electrical transport properties through the NC-network of the commercially available VP AdNano {sup registered} ZnO2O particles were already to some extent explored, their optical properties and therefore suitability as an active light emitter in NC-LEDs were not studied so far. (orig.)

  5. Bigger, Brighter, Bluer-Better?Current light-emitting devices- adverse sleep properties and preventative strategies.

    Directory of Open Access Journals (Sweden)

    Paul eGringras

    2015-10-01

    Full Text Available ObjectiveIn an effort to enhance the efficiency, brightness and contrast of light-emitting (LE devices during the day, displays often generate substantial short-wavelength (blue-enriched light emissions that can adversely affect sleep. We set out to verify the extent of such short-wavelength emissions, produced by a tablet (iPad Air, e-reader (Kindle Paperwhite 1st generation and smartphone (iPhone 5s and to determine the impact of strategies designed to reduce these light emissions. SettingUniversity of Surrey dedicated chronobiology facility.MethodsFirstly, the spectral power of all the light-emitting (LE devices was assessed when displaying identical text. Secondly, we compared the text output with that of ‘Angry Birds’-a popular top 100 ‘App Store’ game. Finally we measured the impact of two strategies that attempt to reduce the output of short-wavelength light emissions. The first strategy employed an inexpensive commercially available pair of orange-tinted ‘blue-blocking’ glasses. The second tested an app designed to be ‘sleep-aware’ whose designers deliberately attempted to reduce blue-enriched light emissions.ResultsAll the LE devices shared very similar enhanced blue-light peaks when displaying text. This included the output from the backlit Kindle Paperwhite device. The spectra when comparing text to the Angry Birds game were also very similar, although the

  6. Efficient light-emitting devices based on platinum-complexes-anchored polyhedral oligomeric silsesquioxane materials

    KAUST Repository

    Yang, Xiaohui

    2010-08-24

    The synthesis, photophysical, and electrochemical characterization of macromolecules, consisting of an emissive platinum complex and carbazole moieties covalently attached to a polyhedral oligomeric silsesquioxane (POSS) core, is reported. Organic light-emitting devices based on these POSS materials exhibit a peak external quantum efficiency of ca. 8%, which is significantly higher than that of the analogous devices with a physical blend of the platinum complexes and a polymer matrix, and they represent noticeable improvement in the device efficiency of solution-processable phosphorescent excimer devices. Furthermore, the ratio of monomer and excimer/aggregate electroluminescent emission intensity, as well as the device efficiency, increases as the platinum complex moiety presence on the POSS macromolecules decreases. © 2010 American Chemical Society.

  7. STUDY OF DEGRADATION MECHANISM AND PACKAGING OF ORGANIC LIGHT EMITTING DEVICES

    Institute of Scientific and Technical Information of China (English)

    Gu Xu

    2003-01-01

    Organic Light Emitting Devices (OLED) have attracted much attention recently, for their applications in future Flat Panel Displays and lighting products. However, their fast degradation remained a major obstacle to their commercialization. Here we present a brief summary of our studies on both extrinsic and intrinsic causes for the fast degradation of OLEDs. In particular, we focus on the origin of the dark spots by "rebuilding" cathodes, which confirms that the growth of dark spots occurs primarily due to cathode delamination. In the meantime, we recapture the findings from the search for suitable OLED packaging materials, in particular polymer composites, which provide both heat dissipation and moisture resistance, in addition to electrical insulation.

  8. Ambient fabrication of flexible and large-area organic light-emitting devices using slot-die coating

    DEFF Research Database (Denmark)

    Sandstrom, Andreas; Dam, Henrik Friis; Krebs, Frederik C;

    2012-01-01

    The grand vision of manufacturing large-area emissive devices with low-cost roll-to-roll coating methods, akin to how newspapers are produced, appeared with the emergence of the organic light-emitting diode about 20 years ago. Today, small organic light-emitting diode displays are commercially...... available in smartphones, but the promise of a continuous ambient fabrication has unfortunately not materialized yet, as organic light-emitting diodes invariably depend on the use of one or more time-and energy-consuming process steps under vacuum. Here we report an all-solution-based fabrication...... of an alternative emissive device, a light-emitting electrochemical cell, using a slot-die roll-coating apparatus. The fabricated flexible sheets exhibit bidirectional and uniform light emission, and feature a fault-tolerant >1-mu m-thick active material that is doped in situ during operation. It is notable...

  9. Efficient inverted organic light-emitting devices by amine-based solvent treatment (Presentation Recording)

    Science.gov (United States)

    Song, Myoung Hoon; Choi, Kyoung-Jin; Jung, Eui Dae

    2015-10-01

    The efficiency of inverted polymer light-emitting diodes (iPLEDs) were remarkably enhanced by introducing spontaneously formed ripple-shaped nanostructure of ZnO (ZnO-R) and amine-based polar solvent treatment using 2-methoxyethanol and ethanolamine (2-ME+EA) co-solvents on ZnO-R. The ripple-shape nanostructure of ZnO layer fabricated by solution process with optimal rate of annealing temperature improves the extraction of wave guide modes inside the device structure, and 2-ME+EA interlayer enhances the electron injection and hole blocking and reduces exciton quenching between polar solvent treated ZnO-R and emissive layer. As a result, our optimized iPLEDs show the luminous efficiency (LE) of 61.6 cd A-1, power efficiency (PE) of 19.4 lm W-1 and external quantum efficiency (EQE) of 17.8 %. This method provides a promising method, and opens new possibilities for not only organic light-emitting diodes (OLEDs) but also other organic optoelectronic devices such as organic photovoltaics, organic thin film transistors, and electrically driven organic diode laser.

  10. Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology

    Institute of Scientific and Technical Information of China (English)

    Wang Wei; Huang Bei-Ju; Dong Zan; Chen Hong-Da

    2011-01-01

    A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

  11. Light emitting devices based on Si nanoclusters: the integration with a photonic crystal and electroluminescence properties

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphous nanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical and electrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL). The EL properties of these devices have been studied as a function of current and of temperature. Moreover, to improve the extraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure opportunely fabricated by using conventional optical lithography to reduce the total internal reflection of the emitted light. The extraction efficiency in such devices increases by a factor of 4 at a resonance wavelength.

  12. Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Madhava Rao MV

    2009-01-01

    Full Text Available Abstract We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene (DBPPV. The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt% before annealing (1.78 cd/A and after annealing (2.45 cd/A having a brightness 643 and 776 cd/m2at a current density of 36.16 and 31.67 mA/cm2are observed, respectively. Current density–voltage and brightness–voltage characteristics indicate that addition of ZnO nanoparticles can facilitate electrical injection and charge transport. The thermal annealing is thought to result in the formation of an interfacial layer between emissive polymer film and cathode.

  13. Inkjet printed polymer light-emitting devices fabricated by thermal embedding of semiconducting polymer nanospheres in an inert matrix

    Science.gov (United States)

    Fisslthaler, Evelin; Sax, Stefan; Scherf, Ullrich; Mauthner, Gernot; Moderegger, Erik; Landfester, Katharina; List, Emil J. W.

    2008-05-01

    An aqueous dispersion of semiconducting polymer nanospheres was used to fabricate polymer light-emitting devices by inkjet printing in an easy-to-apply process with a minimum feature size of 20μm. To form the devices, the electroluminescent material was printed on a nonemitting polystyrene matrix layer and embedded by thermal annealing. The process allows the printing of light-emitting thin-film devices without extensive optimization of film homogeneity and thickness of the active layer. Optical micrographs of printed device arrays, electroluminescence emission spectra, and I /V characteristics of printed ITO/PEDOT:PSS/PS/SPN/Al devices are presented.

  14. Efficient hybrid organic-inorganic light emitting diodes with self-assembled dipole molecule deposited metal oxides

    Science.gov (United States)

    Park, Ji Sun; Lee, Bo Ram; Lee, Ju Min; Kim, Ji-Seon; Kim, Sang Ouk; Song, Myoung Hoon

    2010-06-01

    We investigate the effect of self-assembled dipole molecules (SADMs) on ZnO surface in hybrid organic-inorganic polymeric light-emitting diodes (HyPLEDs). Despite the SADM being extremely thin, the magnitude and orientation of SADM dipole moment effectively influenced the work function of the ZnO. As a consequence, the charge injection barrier between the conduction band of the ZnO and the lowest unoccupied molecular orbital of poly(9,9'-dioctylfluorene)-co-benzothiadiazole could be efficiently controlled resulting that electron injection efficiency is remarkably enhanced. The HyPLEDs modified with a negative dipolar SADM exhibited enhanced device performances, which correspond to approximately a fourfold compared to those of unmodified HyPLEDs.

  15. Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk; Kim, Tae Whan, E-mail: twk@hanayng.ac.kr

    2014-10-15

    The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightness of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.

  16. Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

    Science.gov (United States)

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

    2015-04-22

    Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

  17. Color optimization of conjugated-polymer/InGaN hybrid white light emitting diodes by incomplete energy transfer

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chi-Jung, E-mail: changcj@fcu.edu.tw [Department of Chemical Engineering, Feng Chia University, 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China); Lai, Chun-Feng [Department of Photonics, Feng Chia University, 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China); Madhusudhana Reddy, P.; Chen, Yung-Lin; Chiou, Wei-Yung [Department of Chemical Engineering, Feng Chia University, 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China); Chang, Shinn-Jen [Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 300, Taiwan (China)

    2015-04-15

    By using the wavelength conversion method, white light emitting diodes (WLEDs) were produced by applying mixtures of polysiloxane and fluorescent polymers on InGaN based light emitting diodes. UV curable organic–inorganic hybrid materials with high refractive index (1.561), compromised optical, thermal and mechanical properties was used as encapsulants. Red light emitting fluorescent FABD polymer (with 9,9-dioctylfluorene (F), anthracene (A) and 2,1,3-benzothiadiazole (B), and 4,7-bis(2-thienyl)-2,1,3-benzothiadiazole (D) repeating units) and green light emitting fluorescent FAB polymer were used as wavelength converters. The encapsulant/fluorescent polymer mixture and InGaN produce the white light by incomplete energy transfer mechanism. WLEDs with high color rendering index (CRI, about 93), and tunable correlated color temperature (CCT) properties can be produced by controlling the composition and chemical structures of encapsulating polymer and fluorescent polymer in hybrid materials, offering cool-white and neutral-white LEDs. - Highlights: • Highly efficient white light-emitting diodes (WLEDs) were produced. • Conjugated-polymer/InGaN hybrid WLEDs by incomplete energy transfer mechanism. • WLEDs with high color-rendering index and tunable correlated color temperature. • Polysiloxane encapsulant with superior optical, mechanical and thermal properties.

  18. Advances in phosphors based on organic materials for light emitting devices

    Science.gov (United States)

    Sharma, Kashma; Kumar, Vijay; Kumar, Vinod; Swart, Hendrik C.

    2016-01-01

    A brief overview is presented in the light emitting diodes (LEDs) based on purely organic materials. Organic LEDs are of great interest to the research community because of their outstanding properties and flexibility. Comparison between devices made using different organic materials and their derivatives with respect to synthetic protocols, characterizations, quantum efficiencies, sensitivity, specificity and their applications in various fields have been discussed. This review also discusses the essential requirement and scientific issues that arise in synthesizing cost-effective and environmental friendly organic LEDs diodes based on purely organic materials. This mini review aims to capture and convey some of the key current developments in phosphors formed by purely organic materials and highlights some possible future applications. Hence, this study comes up with a widespread discussion on the various contents in a single platform. Also, it offers avenues for new researchers for futuristic development in the area.

  19. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  20. Whole device printing for full colour displays with organic light emitting diodes

    Science.gov (United States)

    Choi, Jun-ho; Kim, Kyung-Ho; Choi, Se-Jin; Lee, Hong H.

    2006-05-01

    Whole device printing is presented for realizing full colour displays with red (R), green (G) and blue (B) organic light emitting diodes (OLEDs). In this process, the whole OLED structure is transferred from a patterned mould to a glass substrate. Therefore, a simple step and repeat of the transfer of each of R, G and B OLED for RGB pixels completes the fabrication of the full colour display over a given area. A difference in the work of adhesion at two interfaces enables the transfer. A 'rigiflex' mould is used for the printing. It is rigid enough to allow sub-100 nm resolution and yet flexible enough for intimate contact with the glass substrate, which permits large area application.

  1. Study of organic light emitting devices (OLEDs) with optimal emission efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [School of Engineering and IT, B-purple 12, Faculty of EHS, Charles Darwin University, Darwin, NT 0909 (Australia)

    2010-04-15

    The external emission efficiency of organic light emitting devices (OLEDs) is analysed by studying the rate of spontaneous emission of both singlet and triplet excitons and their corresponding radiative lifetimes. Rates of spontaneous emissions are calculated from the first order perturbation theory using the newly discovered time-dependent spin-orbit-exciton-photon interaction operator as the perturbation operator. It is clearly shown how the new interaction operator is responsible for attracting triplet excitons to a phosphor (heavy metal atom) and then it flips the spins to a singlet configuration. Thus, the spin forbidden transition becomes spin allowed. Calculated rates agree with the experimental results qualitatively. Results are of general interests for OLED studies. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Effects of diamond-like carbon thin film in organic light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Yap, Seong-Shan; Yong, Thian-Khok [Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia); Tou, Teck-Yong, E-mail: tytou@mmu.edu.m [Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia)

    2009-07-01

    Ultrathin diamond-like carbon (DLC) was deposited by pulsed Nd:YAG laserablation of graphite target on the indium tin oxide (ITO) surface that functioned as the buffered anode for single-layer organic light emitting devices (OLEDs). Deposited by 355 nm Nd:YAG laser, DLC films were characterized by the Raman spectroscopy and the bulk resistivity measurement. Insertion of DLC in the hole-transport ITO/DLC/TPD/Al device slightly increased the injection current density and reduced the turn-on voltage. But DLC insertion in the electron-transport ITO/DLC/Alq{sub 3}/Al device greatly decreased the injection current density and increased the turn-on voltage. For the ITO/DLC/(TPD + Alq{sub 3} + PVK)/Al device, that was doped with Alq{sub 3} and TPD, improved performance with a higher current density and brightness were consistently obtained. Possible mechanisms for the DLC effect in these single-layer devices were discussed.

  3. Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure

    Institute of Scientific and Technical Information of China (English)

    Liu Xiang; Wei Fuxiang; Liu Hui

    2009-01-01

    Blue and white top-emitting organic light-emitting devices OLEDs with cavity effect have been fabricated.TBADN:3%DSAPh and Alq3:DCJTB/TBADN:TBPe/Alq3:C545 were used as emitting materials of microcavity OLEDs.On a patterned glass substrate,silver was deposited as reflective anode,and copper phthalocyanine (CuPc)layer as HIL and 4'-bis[N-(1-Naphthyl)-N-phenyl-amino]biphenyl(NPB)layer as HTL were made.Al/Ag thin films were made as semi-transparent cathode with a transmittance of about 30%.By changing the thickness of indium tin oxide ITO,deep blue with Commission Internationale de L'Eclairage chromaticity coordinates(CIEx,y)of(0.141,0.049)was obtained on TBADN:3%DSAPh devices,and different color(red,blue and green)was obrained on Alq3:DCJTB/TBADN:TBPe/Alq3:C545 devices,full width at half maxima(FWHM)was only 17 nm.The spectral intensity and FWHM of emission in cavity devices have also been studied.

  4. Synthesis and design of organic light-emitting devices containing lanthanide-cored complexes

    Science.gov (United States)

    Phelan, Gregory D.; Carlson, Brenden; Lawson, Rhys; Rowe, Daniel; Allen, Kolby; Dalton, Larry; Jiang, Xuezhong; Kim, Joo H.; Jen, Alex K.

    2004-02-01

    There is a considerable interest in the use of metal centered materials as a light source in the growing field of organic light emitting devices (OLED's). In these devices, a polymeric host matrix containing either a carbazole type polymer or polyfluorene derivatives is used to help facilitate energy transfer to the luminophore. We have shown that by using a gadolinium complex that consist of three equivalents of a chelated dibenzoylmethane b-diketone ligand and one equivalent of a phenanthroline type ligand as a component in the host matrix, the performance of a double layer type OLED is improved. We have studied OLED systems that contain tris chelated europium compounds that contain three equivalents of partially fluorinated β-diketone type ligands and an equivalent of a phenanthroline type ligand. In these devices, the external efficiency has shown a 30-fold increase. We have also shown there is an increase for Osmium based OLED's that use the gadolinium complex as part of the polymer matrix. In these devices, the maximum quantum efficiency increased from 2.1% to a value of 3.8%.

  5. Bright luminescence from pure DNA-curcumin–based phosphors for bio hybrid light-emitting diodes

    Science.gov (United States)

    Reddy, M. Siva Pratap; Park, Chinho

    2016-08-01

    Recently, significant advances have occurred in the development of phosphors for bio hybrid light-emitting diodes (Bio-HLEDs), which have created brighter, metal-free, rare-earth phosphor-free, eco-friendly, and cost-competitive features for visible light emission. Here, we demonstrate an original approach using bioinspired phosphors in Bio-HLEDs based on natural deoxyribonucleic acid (DNA)-curcumin complexes with cetyltrimethylammonium (CTMA) in bio-crystalline form. The curcumin chromophore was bound to the DNA double helix structure as observed using field emission tunnelling electron microscopy (FE-TEM). Efficient luminescence occurred due to tightly bound curcumin chromophore to DNA duplex. Bio-HLED shows low luminous drop rate of 0.0551 s‑1. Moreover, the solid bio-crystals confined the activating bright luminescence with a quantum yield of 62%, thereby overcoming aggregation-induced quenching effect. The results of this study herald the development of commercially viable large-scale hybrid light applications that are environmentally benign.

  6. Colour tuning in white hybrid inorganic/organic light-emitting diodes

    Science.gov (United States)

    Bruckbauer, Jochen; Brasser, Catherine; Findlay, Neil J.; Edwards, Paul R.; Wallis, David J.; Skabara, Peter J.; Martin, Robert W.

    2016-10-01

    White hybrid inorganic/organic light-emitting diodes (LEDs) were fabricated by combining a novel organic colour converter with a blue inorganic LED. An organic small molecule was specifically synthesised to act as down-converter. The characteristics of the white colour were controlled by changing the concentration of the organic molecule based on the BODIPY unit, which was embedded in a transparent matrix, and volume of the molecule and encapsulant mixture. The concentration has a critical effect on the conversion efficiency, i.e. how much of the absorbed blue light is converted into yellow light. With increasing concentration the conversion efficiency decreases. This quenching effect is due to aggregation of the organic molecule at higher concentrations. Increasing the deposited amount of the converter does not increase the yellow emission despite more blue light being absorbed. Degradation of the organic converter was also observed during a period of 15 months from LED fabrication. Angular-dependent measurements revealed slight deviation from a Lambertian profile for the blue and yellow emission peaks leading to a small change in ‘whiteness’ with emission angle. Warm white and cool white light with correlated colour temperatures of 2770 K and 7680 K, respectively, were achieved using different concentrations of the converter molecule. Although further work is needed to improve the lifetime and poor colour rendering, these hybrid LEDs show promising results as an alternative approach for generating white LEDs compared with phosphor-based white LEDs.

  7. A study of tin oxide as an election injection layer in hybrid polymer light-emitting diodes

    Science.gov (United States)

    Lu, Li Ping; Finlayson, Chris E.; Friend, Richard H.

    2014-12-01

    We investigate the n-type metal oxide tin (IV) oxide (SnO2) as an electron injection and transport layer in hybrid polymer light-emitting diodes. SnO2 is air stable and bio-safe, with high optical transparency and electrical conductivity, and with a deep valence band energy, making it highly suitable for such applications. Results reveal that SnO2 is effective as an electron injecting cathode material when a thin hole-blocking interlayer of Cs2CO3 or Ba(OH)2 is coated on it. Devices are optimized with respect to injection-layer thickness and hole-blocking layer configuration, with high performance metrics (current efficiencies of 20 cd A-1, external quantum efficiencies of 6.5%) being demonstrated in the device with Ba(OH)2 as the inorganic interlayer in the hybrid architecture. Also, we characterize thin films of spray-pyrolysis-deposited SnO2, as compared with the commonly used interlayer material ZnO, in terms of film morphology and interfacial photophysics.

  8. Light-emitting Diodes

    Science.gov (United States)

    Opel, Daniel R.; Hagstrom, Erika; Pace, Aaron K.; Sisto, Krisanne; Hirano-Ali, Stefanie A.; Desai, Shraddha

    2015-01-01

    Background: In the early 1990s, the biological significance of light-emitting diodes was realized. Since this discovery, various light sources have been investigated for their cutaneous effects. Study design: A Medline search was performed on light-emitting diode lights and their therapeutic effects between 1996 and 2010. Additionally, an open-label, investigator-blinded study was performed using a yellow light-emitting diode device to treat acne, rosacea, photoaging, alopecia areata, and androgenetic alopecia. Results: The authors identified several case-based reports, small case series, and a few randomized controlled trials evaluating the use of four different wavelengths of light-emitting diodes. These devices were classified as red, blue, yellow, or infrared, and covered a wide range of clinical applications. The 21 patients the authors treated had mixed results regarding patient satisfaction and pre- and post-treatment evaluation of improvement in clinical appearance. Conclusion: Review of the literature revealed that differing wavelengths of light-emitting diode devices have many beneficial effects, including wound healing, acne treatment, sunburn prevention, phototherapy for facial rhytides, and skin rejuvenation. The authors’ clinical experience with a specific yellow light-emitting diode device was mixed, depending on the condition being treated, and was likely influenced by the device parameters. PMID:26155326

  9. Light-emitting diode and laser fluorescence-based devices in detecting occlusal caries

    Science.gov (United States)

    Rodrigues, Jonas A.; Hug, Isabel; Neuhaus, Klaus W.; Lussi, Adrian

    2011-10-01

    The aim of this study was to assess the performance of two light-emitting diode (LED)- and two laser fluorescence-based devices in detecting occlusal caries in vitro. Ninety-seven permanent molars were assessed twice by two examiners using two LED- (Midwest Caries - MID and VistaProof - VP) and two laser fluorescence-based (DIAGNOdent 2095 - LF and DIAGNOdent pen 2190 - LFpen) devices. After measuring, the teeth were histologically prepared and classified according to lesion extension. At D1 the specificities were 0.76 (LF and LFpen), 0.94 (MID), and 0.70 (VP); the sensitivities were 0.70 (LF), 0.62 (LFpen), 0.31 (MID), and 0.75 (VP). At D3 threshold the specificities were 0.88 (LF), 0.87 (LFpen), 0.90 (MID), and 0.70 (VP); the sensitivities were 0.63 (LF and LFpen), 0.70 (MID), and 0.96 (VP). Spearman's rank correlations with histology were 0.56 (LF), 0.51 (LFpen), 0.55 (MID), and 0.58 (VP). Inter- and intraexaminer ICC values were high and varied from 0.83 to 0.90. Both LF devices seemed to be useful auxiliary tools to the conventional methods, presenting good reproducibility and better accuracy at D3 threshold. MID was not able to differentiate sound surfaces from enamel caries and VP still needs improvement on the cut-off limits for its use.

  10. Highly flexible peeled-off silver nanowire transparent anode using in organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Ya-Hui; Duan, Yu, E-mail: duanyu@jlu.edu.cn; Wang, Xiao; Yang, Dan; Yang, Yong-Qiang; Chen, Ping; Sun, Feng-Bo; Xue, Kai-Wen; Zhao, Yi

    2015-10-01

    Graphical abstract: - Highlights: • An ultra-smooth AgNW film on a flexible photopolymer substrate has been fabricated. • The AgNW film has a low sheet resistance with high transparency and flexibility. • OLEDs based on AgNW:NOA63 substrate can be bent at a radius of curvature of 2 mm. - Abstract: Materials to replace indium tin oxide (ITO) for high transmittance and electrical conductivity are urgently needed. In this paper, we adopted a silver nanowire (AgNW)-photopolymer (NOA63) film as a new platform for flexible optoelectronic devices. This design combined a transparent electrode and a flexible substrate. We utilized this application to obtain flexible organic light-emitting devices (FOLEDs). A peel-off process combined with a spin-coating process created an ultra-smooth silver nanowire anode on a photopolymer substrate. The performance of the device was achieved via the perfect morphology of the AgNW anode, the optimal 5 mg/ml concentration of AgNW solution, and the 45.7 Ω/□ sheet resistance of the AgNW film. The maximum current efficiency of the FOLED is 13 cd/A with stable mechanical flexibility even when bent to a radius of curvature of 2 mm. The outstanding performance of the FOLED with peeled off AgNW anode shows that this approach is a promising alternative to ITO for FOLEDs.

  11. Spray deposition of organic electroluminescent coatings for application in flexible light emitting devices

    Directory of Open Access Journals (Sweden)

    Mariya Aleksandrova

    2015-12-01

    Full Text Available Organic electroluminescent (EL films of tris(8-hydroxyquinolinatoaluminum (Alq3 mixed with polystyrene (PS binder were produced by spray deposition. The influence of the substrate temperature on the layer’s morphology and uniformity was investigated. The deposition conditions were optimized and simple flexible light-emitting devices consisting of indium-tin oxide/Alq3:PS/aluminum were fabricated on polyethylene terephthalate (PET foil to demonstrate the advantages of the sprayed organic coatings. Same structure was produced by thermal evaporation of Alq3 film as a reference. The influence of the deposition method on the film roughness and contact resistance at the electrode interfaces for both types of structures was estimated. The results were related to the devices’ efficiency. It was found that the samples with sprayed films turn on at 4 V, which is 2 V lower in comparison to the device with thermal evaporated Alq3. The current through the sprayed device is six times higher as well (17 mA vs. 2.8 mA at 6.5 V, which can be ascribed to the lower contact resistance at the EL film/electrode interfaces. This is due to the lower surface roughness of the pulverized layers.

  12. Concentration-insensitive phosphorescent organic light emitting devices (PhOLEDs) for easy manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Dumur, Frédéric, E-mail: frederic.dumur@univ-amu.fr [Aix-Marseille Université, CNRS, ICR, UMR 7273, F-13397 Marseille (France); Lepeltier, Marc [Institut Lavoisier de Versailles, UMR 8180 CNRS, Université de Versailles Saint-Quentin en Yvelines, 45 avenue des Etats-Unis, 78035 Versailles Cedex (France); Zamani Siboni, Hossein, E-mail: hzamanis@uwaterloo.ca [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West Waterloo, ON, Canada N2L 3G1 (Canada); Xiao, Pu; Graff, Bernadette; Lalevée, Jacques [Institut de Science des Matériaux de Mulhouse IS2M, UMR 7361 CNRS, Université de Haute Alsace, 15 rue Jean Starcky, 68057 Mulhouse Cedex (France); Gigmes, Didier [Aix-Marseille Université, CNRS, ICR, UMR 7273, F-13397 Marseille (France); Aziz, Hany [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West Waterloo, ON, Canada N2L 3G1 (Canada)

    2014-07-01

    Two heteroleptic iridium(III) complexes Ir(piq){sub 2}(dbm) and Ir(btp){sub 2}(acac) have been tested as emitters for phosphorescent OLEDs (PhOLEDs). Interestingly, device performance exhibited a marked insensitivity to the dopant concentration. In this study, a dibenzoylmethane (dbm)-based complex has also been tested for the first time as dopant for OLEDs. To evaluate the emissive properties of this new emitter belonging to a family of complexes that has not been investigated yet, identical devices were prepared with the well-known red dopant Ir(btp){sub 2}(acac) for comparison. The new complex Ir(piq){sub 2}(dbm) exhibited comparable performance to that obtained with Ir(btp){sub 2}(acac). - Highlights: • A new neutral iridium complex has been tested as emitter. • TD-DFT calculations and electrochemical measurements were carried out to support the experimental results. • UV–visible absorption and photoluminescence spectroscopy of complexes were investigated. • Concentration-insensitive phosphorescent organic light emitting devices were obtained.

  13. Blue and green organic light-emitting devices with various film thicknesses for color tuning

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Blue and green organic light-emitting devices with a structure of indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1 '-biphenyl-4,4'-diamine (NPB)/aluminum(Ⅲ) bis(2-methyl-8-quinolinato)4 -phenylphenolato (BAlq)/tris(8-hydroxyquinolate)-aluminum (Alq3)/Mg:Ag have been fabricated. Blue to green light emission has been achieved with the change of organic film thickness. Based on energy band diagram and charge carrier tunneling theory, it is concluded that the films of different thicknesses play a role as a color-tuning layer and the color-variable electroluminescence (EL) is ascribed to the modulation function within the charge carrier recombination zone. In the case of heterostructure devices with high performance, the observed EL spectra varies significantly with the thickness of organic films, which is resulted from the shift of recombination region site. It has not been hitherto indicated that the devices compose of identical components could be implemented to realize different color emission by changing the film thickness of functional layers.

  14. Charge transport in light emitting devices based on colloidal quantum dots and a solution-processed nickel oxide layer.

    Science.gov (United States)

    Nguyen, Huu Tuan; Jeong, Huiseong; Park, Ji-Yong; Ahn, Y H; Lee, Soonil

    2014-05-28

    We fabricated hybrid light emitting devices based on colloidal CdSe/ZnS core/shell quantum dots and a solution-processed NiO layer. The use of a sol-gel NiO layer as a hole injection layer (HIL) resulted in overall improvement in device operation compared to a control device with a more conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) HIL. In particular, luminous efficiency increased substantially because of the suppression of excessive currents and became as large as 2.45 cd/A. To manifest the origin of current reduction, temperature- and electric field-dependent variations of currents with respect to bias voltages were investigated. In a low bias voltage range below the threshold for luminance turn-on, the Poole-Frenkel (PF) emission mechanism was responsible for the current-density variation. However, the space-charge-limited current modified with PF-type mobility ruled the current-density variation in high bias voltage range above the threshold.

  15. High-contrast top-emitting organic light-emitting devices

    Institute of Scientific and Technical Information of China (English)

    Chen Shu-Fen; Chen Chun-Yan; Yang Yang; Xie Jun; Huang Wei; Shi Hong-Ying; Cheng Fan

    2012-01-01

    In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni (30 nm)/MgF2 (62 nm)/ZnS (16 nm)/Ni (20 nm) and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A (at 62.3 mA/cm2) together with a very stable chromaticity.The contrast ratio reaches 561∶1 at an on-state brightness of 1000 cd/m2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can als0 enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.

  16. Bacterial cellulose membrane as flexible substrate for organic light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Legnani, C.; Vilani, C. [CeDO-Organic Device Center, Dimat-Dimat, Inmetro, Duque de Caxias, RJ (Brazil); Calil, V.L. [CeDO-Organic Device Center, Dimat-Dimat, Inmetro, Duque de Caxias, RJ (Brazil); LOEM-Molecular Optoelectronic Laboratory-Physics Department-PUC-Rio, Rio de Janeiro, RJ (Brazil); Barud, H.S. [Institute of Chemistry, Sao Paulo State University-UNESP, CP 355 Araraquara, SP (Brazil); Quirino, W.G. [CeDO-Organic Device Center, Dimat-Dimat, Inmetro, Duque de Caxias, RJ (Brazil); Achete, C.A. [CeDO-Organic Device Center, Dimat-Dimat, Inmetro, Duque de Caxias, RJ (Brazil); COPPE-Programa de Engenharia Metalurgica e de Materiais, UFRJ, Rio de Janeiro, RJ (Brazil); Ribeiro, S.J.L. [Institute of Chemistry, Sao Paulo State University-UNESP, CP 355 Araraquara, SP (Brazil); Cremona, M. [CeDO-Organic Device Center, Dimat-Dimat, Inmetro, Duque de Caxias, RJ (Brazil); LOEM-Molecular Optoelectronic Laboratory-Physics Department-PUC-Rio, Rio de Janeiro, RJ (Brazil)], E-mail: cremona@fis.puc-rio.br

    2008-12-01

    Bacterial cellulose (BC) membranes produced by gram-negative, acetic acid bacteria (Gluconacetobacter xylinus), were used as flexible substrates for the fabrication of Organic Light Emitting Diodes (OLED). In order to achieve the necessary conductive properties indium tin oxide (ITO) thin films were deposited onto the membrane at room temperature using radio frequency (r.f.) magnetron sputtering with an r.f. power of 30 W, at pressure of 8 mPa in Ar atmosphere without any subsequent thermal treatment. Visible light transmittance of about 40% was observed. Resistivity, mobility and carrier concentration of deposited ITO films were 4.90 x 10{sup -4} Ohm cm, 8.08 cm{sup 2}/V-s and - 1.5 x 10{sup 21} cm{sup -3}, respectively, comparable with commercial ITO substrates. In order to demonstrate the feasibility of devices based on BC membranes three OLEDs with different substrates were produced: a reference one with commercial ITO on glass, a second one with a SiO{sub 2} thin film interlayer between the BC membrane and the ITO layer and a third one just with ITO deposited directly on the BC membrane. The observed OLED luminance ratio was: 1; 0.5; 0.25 respectively, with 2400 cd/m{sup 2} as the value for the reference OLED. These preliminary results show clearly that the functionalized biopolymer, biodegradable, biocompatible bacterial cellulose membranes can be successfully used as substrate in flexible organic optoelectronic devices.

  17. Device based on the coupling of an organic light-emitting diode with a photoconductive material

    Energy Technology Data Exchange (ETDEWEB)

    El Amrani, A. [Universite de Limoges, Faculte des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Departement MINACOM, 123 Av Albert Thomas, 87060 Limoges (France); Lucas, B. [Universite de Limoges, Faculte des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Departement MINACOM, 123 Av Albert Thomas, 87060 Limoges (France)], E-mail: bruno.lucas@unilim.fr; Moliton, A. [Universite de Limoges, Faculte des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Departement MINACOM, 123 Av Albert Thomas, 87060 Limoges (France)

    2008-02-15

    We have realized a device based on the coupling of an organic light-emitting diode (with tri(8-hydroxyquinoline)aluminium for light emission) as an input unit with a photoconductive material as an output unit. Various photoconductive materials like pentacene, Cu-phtalocyanine and fullerene were investigated under green light illumination with an emission peak at 550 nm. Photocurrent measurements versus light intensity and bias voltage (applied between two 50 {mu}m distant indium-tin oxide bottom electrodes for the current to flow through the materials) were realized at room temperature a photocurrent gain around 4 is obtained when the materials are subjected to a luminance of about 5000 cd/m{sup 2} and for bias voltage of - 50 V. Besides, it was shown that to obtain a device with a fast photocurrent response by switching the light off and on, it is necessary to apply a bias voltage higher than - 200 V in these conditions, the gain is multiplied by a factor of 3.

  18. Organic Light-Emitting Devices (OLEDS) and Their Optically Detected Magnetic Resonance (ODMR)

    Energy Technology Data Exchange (ETDEWEB)

    Gang Li

    2003-12-12

    Organic Light-Emitting Devices (OLEDs), both small molecular and polymeric have been studied extensively since the first efficient small molecule OLED was reported by Tang and VanSlyke in 1987. Burroughes' report on conjugated polymer-based OLEDs led to another track in OLED development. These developments have resulted in full color, highly efficient (up to {approx} 20% external efficiency 60 lm/W power efficiency for green emitters), and highly bright (> 140,000 Cd/m{sup 2} DC, {approx}2,000,000 Cd/m{sup 2} AC), stable (>40,000 hr at 5 mA/cm{sup 2}) devices. OLEDs are Lambertian emitters, which intrinsically eliminates the view angle problem of liquid crystal displays (LCDs). Thus OLEDs are beginning to compete with the current dominant LCDs in information display. Numerous companies are now active in this field, including large companies such as Pioneer, Toyota, Estman Kodak, Philipps, DuPont, Samsung, Sony, Toshiba, and Osram, and small companies like Cambridge Display Technology (CDT), Universal Display Corporation (UDC), and eMagin. The first small molecular display for vehicular stereos was introduced in 1998, and polymer OLED displays have begun to appear in commercial products. Although displays are the major application for OLEDs at present, they are also candidates for nest generation solid-state lighting. In this case the light source needs to be white in most cases. Organic transistors, organic solar cells, etc. are also being developed vigorously.

  19. Ultrasonic spray coating polymer and small molecular organic film for organic light-emitting devices

    Science.gov (United States)

    Liu, Shihao; Zhang, Xiang; Zhang, Letian; Xie, Wenfa

    2016-11-01

    Ultrasonic spray coating process (USCP) with high material -utilization, low manufacture costs and compatibility to streamline production has been attractive in researches on photoelectric devices. However, surface tension exists in the solvent is still a huge obstacle to realize smooth organic film for organic light emitting devices (OLEDs) by USCP. Here, high quality polymer anode buffer layer and small molecular emitting layer are successfully realized through USCP by introducing extra-low surface tension diluent and surface tension control method. The introduction of low surface tension methyl alcohol is beneficial to the formation of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) films and brings obvious phase separation and improved conductivity to PEDOT:PSS film. Besides, a surface tension control method, in which new stable tension equilibrium is built at the border of wetting layer, is proposed to eliminate the effect of surface tension during the solvent evaporation stage of ultrasonic spray coating the film consists of 9,9-Spirobifluoren-2-yl-diphenyl-phosphine oxide doped with 10 wt% tris [2-(p -tolyl) pyridine] iridium (III). A smooth and homogenous small molecular emitting layer without wrinkles is successfully realized. The effectiveness of the ultrasonic spray coating polymer anode buffer layer and small molecular emitting layer are also proved by introducing them in OLEDs.

  20. Hole injection enhancement in organic light emitting devices using plasma treated graphene oxide

    Science.gov (United States)

    Jesuraj, P. Justin; Parameshwari, R.; Kanthasamy, K.; Koch, J.; Pfnür, H.; Jeganathan, K.

    2017-03-01

    The hole injection layer (HIL) with high work function (WF) is desirable to reduce the injection barrier between anode and hole transport layer in organic light emitting devices (OLED). Here, we report a novel approach to tune the WF of graphene oxide (GO) using oxygen and hydrogen plasma treatment and its hole injection properties in OLEDs. The mild exposure of oxygen plasma on GO (O2-GO) significantly reduces the injection barrier by increasing the WF of anode (4.98 eV) through expansion of Csbnd O bonds. In contrast, the hole injection barrier was drastically increased for hydrogen plasma treated GO (H2-GO) layers as the WF is lowered by the contraction of Csbnd O bond. By employing active O2-GO as HIL in OLEDs found to exhibit superior current efficiency of 4.2 cd/A as compared to 3.3 cd/A for pristine GO. Further, the high injection efficiency of O2-GO infused hole only device can be attributed to the improved energy level matching. Ultraviolet and X-ray photoelectron spectroscopy were used to correlate the WF of HIL infused anode towards the enhanced performance of OLEDs with their capricious content of Csbnd O in GO matrix.

  1. Organic light emitting device architecture for reducing the number of organic materials

    Science.gov (United States)

    D'Andrade, Brian; Esler, James

    2011-10-18

    An organic light emitting device is provided. The device includes an anode and a cathode. A first emissive layer is disposed between the anode and the cathode. The first emissive layer includes a first non-emitting organic material, which is an organometallic material present in the first emissive layer in a concentration of at least 50 wt %. The first emissive layer also includes a first emitting organic material. A second emissive layer is disposed between the first emissive layer and the cathode, preferably, in direct contact with the first emissive layer. The second emissive material includes a second non-emitting organic material and a second emitting organic material. The first and second non-emitting materials, and the first and second emitting materials, are all different materials. A first non-emissive layer is disposed between the first emissive layer and the anode, and in direct contact with the first emissive layer. The first non- emissive layer comprises the first non-emissive organic material.

  2. Ultrasonic spray coating polymer and small molecular organic film for organic light-emitting devices.

    Science.gov (United States)

    Liu, Shihao; Zhang, Xiang; Zhang, Letian; Xie, Wenfa

    2016-11-22

    Ultrasonic spray coating process (USCP) with high material -utilization, low manufacture costs and compatibility to streamline production has been attractive in researches on photoelectric devices. However, surface tension exists in the solvent is still a huge obstacle to realize smooth organic film for organic light emitting devices (OLEDs) by USCP. Here, high quality polymer anode buffer layer and small molecular emitting layer are successfully realized through USCP by introducing extra-low surface tension diluent and surface tension control method. The introduction of low surface tension methyl alcohol is beneficial to the formation of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) films and brings obvious phase separation and improved conductivity to PEDOT:PSS film. Besides, a surface tension control method, in which new stable tension equilibrium is built at the border of wetting layer, is proposed to eliminate the effect of surface tension during the solvent evaporation stage of ultrasonic spray coating the film consists of 9,9-Spirobifluoren-2-yl-diphenyl-phosphine oxide doped with 10 wt% tris [2-(p -tolyl) pyridine] iridium (III). A smooth and homogenous small molecular emitting layer without wrinkles is successfully realized. The effectiveness of the ultrasonic spray coating polymer anode buffer layer and small molecular emitting layer are also proved by introducing them in OLEDs.

  3. Improvement in Device Performance and Reliability of Organic Light-Emitting Diodes through Deposition Rate Control

    Directory of Open Access Journals (Sweden)

    Shun-Wei Liu

    2014-01-01

    Full Text Available We demonstrated a fabrication technique to reduce the driving voltage, increase the current efficiency, and extend the operating lifetime of an organic light-emitting diode (OLED by simply controlling the deposition rate of bis(10-hydroxybenzo[h]qinolinato beryllium (Bebq2 used as the emitting layer and the electron-transport layer. In our optimized device, 55 nm of Bebq2 was first deposited at a faster deposition rate of 1.3 nm/s, followed by the deposition of a thin Bebq2 (5 nm layer at a slower rate of 0.03 nm/s. The Bebq2 layer with the faster deposition rate exhibited higher photoluminescence efficiency and was suitable for use in light emission. The thin Bebq2 layer with the slower deposition rate was used to modify the interface between the Bebq2 and cathode and hence improve the injection efficiency and lower the driving voltage. The operating lifetime of such a two-step deposition OLED was 1.92 and 4.6 times longer than that of devices with a single deposition rate, that is, 1.3 and 0.03 nm/s cases, respectively.

  4. Hybrid Perovskite Light-Emitting Diodes Based on Perovskite Nanocrystals with Organic-Inorganic Mixed Cations.

    Science.gov (United States)

    Zhang, Xiaoli; Liu, He; Wang, Weigao; Zhang, Jinbao; Xu, Bing; Karen, Ke Lin; Zheng, Yuanjin; Liu, Sheng; Chen, Shuming; Wang, Kai; Sun, Xiao Wei

    2017-03-07

    Organic-inorganic hybrid perovskite materials with mixed cations have demonstrated tremendous advances in photovoltaics recently, by showing a significant enhancement of power conversion efficiency and improved perovskite stability. Inspired by this development, this study presents the facile synthesis of mixed-cation perovskite nanocrystals based on FA(1-x) Csx PbBr3 (FA = CH(NH2 )2 ). By detailed characterization of their morphological, optical, and physicochemical properties, it is found that the emission property of the perovskite, FA(1-x) Csx PbBr3 , is significantly dependent on the substitution content of the Cs cations in the perovskite composition. These mixed-cation perovskites are employed as light emitters in light-emitting diodes (LEDs). With an optimized composition of FA0.8 Cs0.2 PbBr3 , the LEDs exhibit encouraging performance with a highest reported luminance of 55 005 cd m(-2) and a current efficiency of 10.09 cd A(-1) . This work provides important instructions on the future compositional optimization of mixed-cation perovskite for obtaining high-performance LEDs. The authors believe this work is a new milestone in the development of bright and efficient perovskite LEDs.

  5. Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

    Science.gov (United States)

    Liao, Ying-Jie; Lou, Yan-Hui; Wang, Zhao-Kui; Liao, Liang-Sheng

    2014-11-01

    A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a suppression of the leak current in the current—voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.

  6. Genetic Algorithm for Innovative Device Designs in High-Efficiency III-V Nitride Light-Emitting Diodes

    Science.gov (United States)

    Zhu, Di; Schubert, Martin F.; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Shim, Hyunwook; Sone, Cheolsoo

    2012-01-01

    Light-emitting diodes are becoming the next-generation light source because of their prominent benefits in energy efficiency, versatility, and benign environmental impact. However, because of the unique polarization effects in III-V nitrides and the high complexity of light-emitting diodes, further breakthroughs towards truly optimized devices are required. Here we introduce the concept of artificial evolution into the device optimization process. Reproduction and selection are accomplished by means of an advanced genetic algorithm and device simulator, respectively. We demonstrate that this approach can lead to new device structures that go beyond conventional approaches. The innovative designs originating from the genetic algorithm and the demonstration of the predicted results by implementing structures suggested by the algorithm establish a new avenue for complex semiconductor device design and optimization.

  7. Luminescent ion pairs with tunable emission colors for light-emitting devices and electrochromic switches.

    Science.gov (United States)

    Guo, Song; Huang, Tianci; Liu, Shujuan; Zhang, Kenneth Yin; Yang, Huiran; Han, Jianmei; Zhao, Qiang; Huang, Wei

    2017-01-01

    Most recently, stimuli-responsive luminescent materials have attracted increasing interest because they can exhibit tunable emissive properties which are sensitive to external physical stimuli, such as light, temperature, force, and electric field. Among these stimuli, electric field is an important external stimulus. However, examples of electrochromic luminescent materials that exhibit emission color change induced by an electric field are limited. Herein, we have proposed a new strategy to develop electrochromic luminescent materials based on luminescent ion pairs. Six tunable emissive ion pairs (IP1-IP6) based on iridium(iii) complexes have been designed and synthesized. The emission spectra of ion pairs (IPs) show concentration dependence and the energy transfer process is very efficient between positive and negative ions. Interestingly, IP6 displayed white emission at a certain concentration in solution or solid state. Thus, in this contribution, UV-chip (365 nm) excited light-emitting diodes showing orange, light yellow and white emission colors were successfully fabricated. Furthermore, IPs displayed tunable and reversible electrochromic luminescence. For example, upon applying a voltage of 3 V onto the electrodes, the emission color of the solution of IP1 near the anode or cathode changed from yellow to red or green, respectively. Color tunable electrochromic luminescence has also been realized by using other IPs. Finally, a solid-film electrochromic switch device with a sandwiched structure using IP1 has been fabricated successfully, which exhibited fast and reversible emission color change.

  8. Tunable color parallel tandem organic light emitting devices with carbon nanotube and metallic sheet interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Oliva, Jorge; Desirena, Haggeo; De la Rosa, Elder [Centro de Investigaciones en Optica, A.P. 1-948, León, Guanajuato 37160 (Mexico); Papadimitratos, Alexios [Solarno Inc., Coppell, Texas 75019 (United States); University of Texas at Dallas, Richardson, Texas 75080 (United States); Zakhidov, Anvar A., E-mail: Zakhidov@utdallas.edu [Solarno Inc., Coppell, Texas 75019 (United States); University of Texas at Dallas, Richardson, Texas 75080 (United States); Energy Efficiency Center, National University of Science and Technology, MISiS, Moscow 119049 (Russian Federation)

    2015-11-21

    Parallel tandem organic light emitting devices (OLEDs) were fabricated with transparent multiwall carbon nanotube sheets (MWCNT) and thin metal films (Al, Ag) as interlayers. In parallel monolithic tandem architecture, the MWCNT (or metallic films) interlayers are an active electrode which injects similar charges into subunits. In the case of parallel tandems with common anode (C.A.) of this study, holes are injected into top and bottom subunits from the common interlayer electrode; whereas in the configuration of common cathode (C.C.), electrons are injected into the top and bottom subunits. Both subunits of the tandem can thus be monolithically connected functionally in an active structure in which each subunit can be electrically addressed separately. Our tandem OLEDs have a polymer as emitter in the bottom subunit and a small molecule emitter in the top subunit. We also compared the performance of the parallel tandem with that of in series and the additional advantages of the parallel architecture over the in-series were: tunable chromaticity, lower voltage operation, and higher brightness. Finally, we demonstrate that processing of the MWCNT sheets as a common anode in parallel tandems is an easy and low cost process, since their integration as electrodes in OLEDs is achieved by simple dry lamination process.

  9. Effect of BCP ultrathin layer on the performance of organic light-emitting devices

    Institute of Scientific and Technical Information of China (English)

    WANG Hong; YU Jun-sheng; LI Lu; TANG Xiao-qing; JIANG Ya-dong

    2008-01-01

    Based on conventional double layer device, triple layer organic light-emitting diodes (OLEDs) with two heterostructures of indium-tin oxide (ITO)/N,N'-diphenyl-N,N'-his(1-naphthyl)(1,1'-biphenyl)-4,4'-diamine(NPB)/2,9 -dimethyl-4,7 -diphenyl-1,10-phenanthroline (BCP)/8-Hydroxyquinoline aluminum (Alq3)/Mg:Ag using vacuum deposition method have been fabricated. The influence of different film thickness of BCP layer on the performance of OLEDs has been investigated. The results showed that when the thickness of the BCP layer film gradually varied from 0.1 nm to 4.0 nm, the electrolumines-cence (EL) spectra of the OLEDs shifted from green to greenish-blue to blue, and the BCP layer acted as the recombination region of charge carriers related to EL spectrum, enhancing the brightness and power efficiency. The power efficiency of OLEDs reached as high as 7.3 lm/W.

  10. Optimal nitrogen and phosphorus codoping carbon dots towards white light-emitting device

    Science.gov (United States)

    Zhang, Feng; Wang, Yaling; Miao, Yanqin; He, Yuheng; Yang, Yongzhen; Liu, Xuguang

    2016-08-01

    Through a one-step fast microwave-assisted approach, nitrogen and phosphorus co-doped carbon dots (N,P-CDs) were synthesized using ammonium citrate (AC) as a carbon source and phosphates as additive reagent. Under the condition of an optimal reaction time of 140 s, the influence of additive with different N and P content on fluorescent performance of N,P-CDs was further explored. It was concluded that high nitrogen content and moderate phosphorus content are necessary for obtaining high quantum yield (QY) N,P-CDs, among which the TAP-CDs (CDs synthesized using ammonium phosphate as additive reagent) show high quantum yield (QY) of 62% and red-green-blue (RGB) spectral composition of 51.67%. Besides, the TAP-CDs exhibit satisfying thermal stability within 180 °C. By virtue of good optical and thermal properties of TAP-CDs, a white light-emitting device (LED) was fabricated by combining ultraviolet chip with TAP-CDs as phosphor. The white LED emits bright warm-white light with the CIE chromaticity coordinate of (0.38, 0.35) and the corresponding color temperature (CCT) of 4450 K, indicating the potential of TAP-CDs phosphor in white LED.

  11. Degradation mechanism beyond device self-heating in high power light-emitting diodes

    Science.gov (United States)

    Yung, K. C.; Liem, H.; Choy, H. S.; Lun, W. K.

    2011-05-01

    A unique degradation property of high power InGaN/GaN multiple quantum well (MQW) white light-emitting diodes (LEDs) was identified. The LEDs were stressed under different forward-currents. The various ageing characteristics were analyzed for both the electrical response and electro-luminescence (EL) spectra. The Raman spectroscopy allowed noninvasive probing of LED junction temperature profiles which correlated well with the EL characteristics, showing a junction temperature drop during degradation at certain current levels. In addition to the common observations: (1) a broadening of the light intensity-current (L-I) characteristic in the nonlinear regime, and (2) a shift of the current-voltage (I-V) dependence to higher current levels, the EL spectra showed different temperature responses of the two blue emission peaks, 440 and 463 nm. The former was temperature sensitive and thus related to shallow defect levels, while the latter was thermally stable and deeper defect states were involved in the degradation process. This unique selection rule resulted in the enhancement of the blue emission peak at 463 nm after degrading the LEDs. This study suggests that LED device heating is not directly linked to the degradation process.

  12. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Xu Denghui [Institute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044 (China); Deng Zhenbo [Institute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044 (China)]. E-mail: zbdeng@center.njtu.edu.cn; Xu Ying [Institute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044 (China); Xiao Jing [Institute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044 (China); Liang Chunjun [Institute of Optoelectronic Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044 (China); Pei Zhiliang [Institute of Metal Research, Chinese Academy of Science, Shenyang 110016 (China); Sun Chao [Institute of Metal Research, Chinese Academy of Science, Shenyang 110016 (China)

    2005-10-10

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar {sup o}C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10{sup -4}{omega}cm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm{sup 2}.

  13. Application of exciplex in the fabrication of white organic light emitting devices with mixed fluorescent and phosphorescent layers

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Dan; Duan, Yahui; Yang, Yongqiang [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Hu, Nan [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Changchun University of Science and Technology, Changchun 130012 (China); Wang, Xiao [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Sun, Fengbo [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Changchun University of Science and Technology, Changchun 130012 (China); Duan, Yu, E-mail: duanyu@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China)

    2015-10-15

    In this study, a highly efficient fluorescent/phosphorescent white organic light-emitting device (WOLED) was fabricated using exciplex light emission. The hole-transport material 4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA), and electron-transport material, 4,7-diphenyl-1,10-phenanthroline (Bphen), were mixed to afford a blue-emitting exciplex. The WOLED was fabricated with a yellow phosphorescent dye, Ir(III) bis(4-phenylthieno [3,2-c] pyridinato-N,C{sup 2'}) acetylacetonate (PO-01), combined with the exciplex. In this structure, the energy can be efficiently transferred from the blend layer to the yellow phosphorescent dye, thus improving the efficiency of the utilization of the triplet exciton. The maximum power efficiency of the WOLED reached a value 9.03 lm/W with an external quantum efficiency of 4.3%. The Commission Internationale de I'Eclairage (CIE) color coordinates (x,y) of the device were from (0.39, 0.45) to (0.27, 0.31), with a voltage range of 4–9 V. - Highlights: • An exciplex/phosphorescence hybrid white OLED was fabricated for the first time with blue/orange complementary emitters. • By using exciplex as the blue emitter, non-radiative triplet-states on the exciplex can be harvested for light-emission by transferring them to low triplet-state phosphors.

  14. Design, simulation and characterization of silicon compatible light emitting devices for optical interconnects

    Science.gov (United States)

    Redding, Brandon Fairfield

    Silicon photonics is well suited to overcome the interconnect bottleneck currently limiting performance in electronic integrated circuits. Photonic interconnects benefit from higher bandwidth, reduced power consumption, and improved scaling with device size relative to their electronic counterparts. Realization of photonic interconnects on a Si platform would enable monolithic integration of electronic and photonic elements, thereby leveraging the considerable infrastructure developed by the Si electronics industry. Inspired by this goal, researchers in the field of Si microphotonics have demonstrated most of the capabilities required for optical communication, including waveguides, modulators, filters, switches and detectors. The key element missing from the Si photonics toolkit remains a monolithic light source. In this work, we study two of the most promising materials in the search for a Si based light source: silicon nanocrystals (Si-nc) and erbium doped glass (Er:SiO2). We developed fabrication processes for both of these materials and performed extensive material characterization to acquire the parameters governing their respective rate equation models. We then used our model to design a series of light emitting devices. We first designed Si-nc distributed Bragg reflector (DBR) microcavities for enhanced spontaneous emission and lasing. The optimized vertically emitting structure exhibited a quality factor of 115 and a peak luminescence enhancement factor of 14.5. We then fabricated a device based on our modeling and observed an experimental quality factor of 140 and an enhancement factor of 15.2. We also applied our simulation tool to investigate amplification and enhanced spontaneous emission in Er:SiO2 based devices. Due to the low refractive index of Er:SiO2, we presented a horizontal slot geometry in which the Er:SiO2 layer is sandwiched between Si layers. We used a modesolver to optimize this geometry and then integrated it in a ring microcavity to

  15. Development of fullerene-containing composites for organic light-emitting devices

    Science.gov (United States)

    Yuan, Yanyan

    2007-12-01

    In order to widen the practical applications of Organic Light Emitting Devices (OLEDs), the device efficiency and device stability must be improved. The anode structure of an OLED device, including the anode and the adjacent contacting organic layer, plays important roles in both device efficiency and stability issues. In this study, C60 is used to engineer the anode structure by incorporating C60 into common hole transport materials, forming organic-C60 composites. N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB):C 60 composites have been studied for use with indium tin oxide (ITO) anodes. Compared with a conventional device without C60, the composite device at a C60 composition of 10 wt.% has improved efficiency by 25% due to more balanced electron-hole currents. Copper phthalocyanine (CuPc):C60 composites have been studied for use with Au anodes. When the Au/CuPc:C60 composite anode structure at an optimum C60 composition of 30 wt.% is used to replace the conventional ITO/CuPc anode structure, a significant increase in current efficiency (˜2 times) is achieved. This result suggests a new possibility to replace the problematic ITO anode with an Au anode. Moreover, the CuPc:C60 composites also form efficient hole injection structures with other metals, namely, Ag, Mg, and Al. The versatility of the composite anode structure is attributed to the complementary role of the two constituents: C60 facilitates hole injection from the metals to the composite; CuPc plays the primary role of transferring holes from the composite to the hole transport NPB layer. The composites enable more thermally stable anode structures as concluded by annealing experiments. It is found that the main reason for the improved thermal stability of the composite anode structure is not interface modification, but the higher thermal stability of the composite materials. No chemical interaction between the components of the composites is detected.

  16. Efficient and mechanically robust stretchable organic light-emitting devices by a laser-programmable buckling process

    Science.gov (United States)

    Yin, Da; Feng, Jing; Ma, Rui; Liu, Yue-Feng; Zhang, Yong-Lai; Zhang, Xu-Lin; Bi, Yan-Gang; Chen, Qi-Dai; Sun, Hong-Bo

    2016-05-01

    Stretchable organic light-emitting devices are becoming increasingly important in the fast-growing fields of wearable displays, biomedical devices and health-monitoring technology. Although highly stretchable devices have been demonstrated, their luminous efficiency and mechanical stability remain impractical for the purposes of real-life applications. This is due to significant challenges arising from the high strain-induced limitations on the structure design of the device, the materials used and the difficulty of controlling the stretch-release process. Here we have developed a laser-programmable buckling process to overcome these obstacles and realize a highly stretchable organic light-emitting diode with unprecedented efficiency and mechanical robustness. The strained device luminous efficiency -70 cd A-1 under 70% strain - is the largest to date and the device can accommodate 100% strain while exhibiting only small fluctuations in performance over 15,000 stretch-release cycles. This work paves the way towards fully stretchable organic light-emitting diodes that can be used in wearable electronic devices.

  17. A device of comparison of light-emitting diodes for a light stream.

    Directory of Open Access Journals (Sweden)

    G. A. Mirskikh

    2011-03-01

    Full Text Available The simple method of comparison of light-emitting diodes after a light stream and possible construction of setting of this method are presented in this article. Parabolic mirrors are specially entered in a construction, as directing concentrators of light stream, and vibromotor with automatic control. Near one focus of mirrors set a light-emitting diode which is envisaged on a vibromotor, and on an opposite mirror in focus fasten fotodetector. After including to the vibromotor, by oscillation vibrations a light-emitting diode in one of moments is combined with focus of parabolic mirror. Whereupon, a light stream is directed by a parabolic mirror on opposite and gathers in focus last, where and registered by fotodetector. The entered vibration imitates the frequent measuring of stream that saves time on realization of measuring.

  18. Dependence of Performance of Organic Light-emitting Devices on Sheet Resistance of Indium-tin-oxide Anodes

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indium-tin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence(EL) efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.

  19. Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Mesta, M.; Coehoorn, R.; Bobbert, P. A. [Department of Applied Physics, Technische Universiteit Eindhoven, P.O. Box 513, NL-5600 MB Eindhoven (Netherlands); Eersel, H. van [Simbeyond B.V., P.O. Box 513, NL-5600 MB Eindhoven (Netherlands)

    2016-03-28

    Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance as a function of J in a multilayer hybrid white OLED that combines fluorescent blue with phosphorescent green and red emission. We investigate two models for TTA and TPQ involving the phosphorescent green and red emitters: short-range nearest-neighbor quenching and long-range Förster-type quenching. Short-range quenching predicts roll-off to occur at much higher J than measured. Taking long-range quenching with Förster radii for TTA and TPQ equal to twice the Förster radii for exciton transfer leads to a fair description of the measured IQE-J curve, with the major contribution to the roll-off coming from TPQ. The measured decrease of the ratio of phosphorescent to fluorescent component of the emitted light with increasing J is correctly predicted. A proper description of the J-dependence of the ratio of red and green phosphorescent emission needs further model refinements.

  20. Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

    Science.gov (United States)

    Mesta, M.; van Eersel, H.; Coehoorn, R.; Bobbert, P. A.

    2016-03-01

    Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance as a function of J in a multilayer hybrid white OLED that combines fluorescent blue with phosphorescent green and red emission. We investigate two models for TTA and TPQ involving the phosphorescent green and red emitters: short-range nearest-neighbor quenching and long-range Förster-type quenching. Short-range quenching predicts roll-off to occur at much higher J than measured. Taking long-range quenching with Förster radii for TTA and TPQ equal to twice the Förster radii for exciton transfer leads to a fair description of the measured IQE-J curve, with the major contribution to the roll-off coming from TPQ. The measured decrease of the ratio of phosphorescent to fluorescent component of the emitted light with increasing J is correctly predicted. A proper description of the J-dependence of the ratio of red and green phosphorescent emission needs further model refinements.

  1. High-Efficiency Saturated Red Bilayer Light-Emitting Diodes: Comparative Studies with Devices from Blend of the Same Light-Emitting Polymers

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; HOU Qiong; MO Yue-Qi; PENG Jun-Biao; CAO Yong

    2006-01-01

    @@ High-efficient saturated red light-emitting diodes are realized based on a bilayer of phenyl-substituted poly [p-phenylene vinylene] derivative (P-PPV) and copolymer (PFO-DBT15) of 9,9-dioctylfluorene (DOF) and 4,7-di2-thienyl-2,1,3-benzothiadiazole (DBT).

  2. Physical phenomena in efficiency and stability of organic light-emitting devices

    Science.gov (United States)

    Luo, Yichun

    2007-12-01

    Operational stability and luminescence efficiency of organic light-emitting devices (OLEDs) continue to be the most important issues for a wide commercialization of this technology. Thus, the main theme of this sandwich-style thesis is to investigate physical phenomena related to the operational stability and luminescence efficiency of OLEDs, and to eventually improve device performances by using various device structures and power driving schemes. Operational stability of OLEDs is generally governed by intrinsic degradation. Aimed at a comprehensive description of intrinsic degradation mechanism, a number of degradation models have been reported in literature. In these models, the intrinsic degradation is generally attributed to the role of positive charges (holes) in decreasing the luminescence efficiency during device operation. In this thesis, we report a further investigation that leads to the discovery that excessive injection of negative charges (electrons) can also induce significant degradation of devices. The rate of degradation is found to be determined primarily by the density of excessive charges (whether they are holes or electrons) in the vicinity of the emitting layer, where the higher the density, the faster the device degradation. In view of the above understanding of degradation mechanism, we developed a hole-injection-tunable-anode-buffer-layer (HITABL) at the anode contact of the devices to improve device stability. By using the HITABL, one can make the necessary diminutive adjustments to the hole injection of a device and achieve a proper charge balance, and thus significantly improve the operational stability of the devices. In terms of luminescence efficiency, the effects of electric field and electric current (hole current or electron current) on luminescence efficiency of a fluorescent dye doped emitting layer are studied, respectively. Results show that a doped emitting layer demonstrates a smaller decrease in luminescence efficiency than

  3. Hybrid electroluminescent devices

    Science.gov (United States)

    Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

    2010-08-03

    A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

  4. White organic light-emitting devices using Zn(BTZ)2 doped with Rubrene as emitting layer

    Institute of Scientific and Technical Information of China (English)

    ZHENG Jiajin; HUA Yulin; YIN Shougen; FENG Xiulan; WU Xiaoming; SUN Yuanyuan; LI Yongfang; YANG Chunhe; SHUAI Zhigang

    2005-01-01

    Zn(BTZ)2 was synthesized from the complex reaction between zinc acetate dihydrate and 2-(2- hydroxyphenyl) benzothiazolate. Then Zn(BTZ)2 was used as main light-emitting material doped with different amounts of fluorescent dye Rubrene and fabricated a series of white organic light emitting devices. The configurations were as follows: ITO/PVK:TPD/Zn(BTZ)2:Rubrene/Al. The doping concentration of Rubrene in Zn(BTZ)2 was 1.2%, 0.12%, 0.08% and 0.05%, respectively. According to the EL spectra and CIE coordinates of the above devices, the optimum doping concentration (0.05%, weight percent) had been determined. The steady and bright white light emitting of the device with 0.05% doping concentration had been obtained, and the white emission covered a wide range of driving voltage (10-22.5 V). The CIE coordinates were (x=0.341, y=0.334) at the driving voltage of 20 V, which was very close to the equi-energy point (x=0.333, y=0.333), and the corresponding luminance and external quantum efficiency were 4048 Cd/m2 and 0.63% (4.05 Cd/A), respectively. Lastly, we also discussed the emitting mechanisms of the material and the devices.

  5. Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices

    OpenAIRE

    Sarwar, A. T. M. Golam; Carnevale, Santino D.; Yang, Fan; Kent, Thomas F.; Jamison, John J.; McComb, David W.; Myers, Roberto C.

    2015-01-01

    Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light emitting diodes (LEDs), lasers, solar cells and sensors. However, expensive single crystalline substrates are commonly used as substrates for nanowire heterostructures as well as for epitaxial d...

  6. Efficient separation of conjugated polymers using a water soluble glycoprotein matrix: from fluorescence materials to light emitting devices.

    Science.gov (United States)

    Hendler, Netta; Wildeman, Jurjen; Mentovich, Elad D; Schnitzler, Tobias; Belgorodsky, Bogdan; Prusty, Deepak K; Rimmerman, Dolev; Herrmann, Andreas; Richter, Shachar

    2014-03-01

    Optically active bio-composite blends of conjugated polymers or oligomers are fabricated by complexing them with bovine submaxilliary mucin (BSM) protein. The BSM matrix is exploited to host hydrophobic extended conjugated π-systems and to prevent undesirable aggregation and render such materials water soluble. This method allows tuning the emission color of solutions and films from the basic colors to the technologically challenging white emission. Furthermore, electrically driven light emitting biological devices are prepared and operated.

  7. Organic Light Emitting Device as a fluorescence spectroscopy's light source : one step towards the lab-on-a-chip device

    Science.gov (United States)

    Camou, S.; Kitamura, M.; Gouy, Jean-Philippe; Fujita, Hiroyuki; Arakawa, Yasuhiko; Fujii, Teruo

    2003-02-01

    Many papers were recently dedicated to the lab-on-a-chip applications, where all the basic elements should be integrated directly onto the microchip. The fluorescence spectroscopy is mostly used as a detection method due to its high reliability and sensitivity, but requires light source and photo-detector. For the first time, we then propose to use Organic material Light Emitting Diode (OLED) to supply a light source for the optical detection based on fluorescence spectroscopy. By combining this OLED with micro-fluidic channels patterned in PDMS layer, the integration of light source on the chip is then achieved. First, the ability of Organic Material to excite fluorescent response from dye is demonstrated. Then, some configurations are described in order to decrease the major drawbacks that have to be solved before applying such kind of devices.

  8. OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Blochwitz-Nimoth, Jan; Bhandari, Abhinav; Boesch, Damien; Fincher, Curtis R.; Gaspar, Daniel J.; Gotthold, David W.; Greiner, Mark T.; Kido, Junji; Kondakov, Denis; Korotkov, Roman; Krylova, Valentina A.; Loeser, Falk; Lu, Min-Hao; Lu, Zheng-Hong; Lussem, Bjorn; Moro, Lorenza; Padmaperuma, Asanga B.; Polikarpov, Evgueni; Rostovtsev, Vsevolod V.; Sasabe, Hisahiro; Silverman, Gary; Thompson, Mark E.; Tietze, Max; Tyan, Yuan-Sheng; Weaver, Michael; Xin , Xu; Zeng, Xianghui

    2015-05-26

    What is an organic light emitting diode (OLED)? Why should we care? What are they made of? How are they made? What are the challenges in seeing these devices enter the marketplace in various applications? These are the questions we hope to answer in this book, at a level suitable for knowledgeable non-experts, graduate students and scientists and engineers working in the field who want to understand the broader context of their work. At the most basic level, an OLED is a promising new technology composed of some organic material sandwiched between two electrodes. When current is passed through the device, light is emitted. The stack of layers can be very thin and has many variations, including flexible and/or transparent. The organic material can be polymeric or composed small molecules, and may include inorganic components. The electrodes may consist of metals, metal oxides, carbon nanomaterials, or other species, though of course for light to be emitted, one electrode must be transparent. OLEDs may be fabricated on glass, metal foils, or polymer sheets (though polymeric substrates must be modified to protect the organic material from moisture or oxygen). In any event, the organic material must be protected from moisture during storage and operation. A control circuit, the exact nature of which depends on the application, drives the OLED. Nevertheless, the control circuit should have very stable current control to generate uniform light emission. OLEDs can be designed to emit a single color of light, white light, or even tunable colors. The devices can be switched on and off very rapidly, which makes them suitable for displays or for general lighting. Given the amazing complexity of the technical and design challenges for practical OLED applications, it is not surprising that applications are still somewhat limited. Although organic electroluminescence is more than 50 years old, the modern OLED field is really only about half that age – with the first high

  9. Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

    Institute of Scientific and Technical Information of China (English)

    Baiquan Liu; Miao Xu; Lei Wang; Hong Tao; Yueju Su; Dongyu Gao; Linfeng Lan; Jianhua Zou; Junbiao Peng

    2014-01-01

    A very-high color rendering index white organic light-emitting diode (WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,40-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED. These results may be beneficial to the design of both material and device architecture for high-performance WOLED.

  10. Perovskite Materials for Light-Emitting Diodes and Lasers.

    Science.gov (United States)

    Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

    2016-08-01

    Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices.

  11. A controlled trial of the Litebook light-emitting diode (LED) light therapy device for treatment of Seasonal Affective Disorder (SAD)

    National Research Council Canada - National Science Library

    Desan, Paul H; Weinstein, Anea J; Michalak, Erin E; Tam, Edwin M; Meesters, Ybe; Ruiter, Martine J; Horn, Edward; Telner, John; Iskandar, Hani; Boivin, Diane B; Lam, Raymond W

    2007-01-01

    .... Light treatment devices using efficient light-emitting diodes (LEDs) whose output is relatively concentrated in short wavelengths may enable a more convenient effective therapy for Seasonal Affective Disorder (SAD). Methods...

  12. Versatile light-emitting-diode-based spectral response measurement system for photovoltaic device characterization.

    Science.gov (United States)

    Hamadani, Behrang H; Roller, John; Dougherty, Brian; Yoon, Howard W

    2012-07-01

    An absolute differential spectral response measurement system for solar cells is presented. The system couples an array of light emitting diodes with an optical waveguide to provide large area illumination. Two unique yet complementary measurement methods were developed and tested with the same measurement apparatus. Good agreement was observed between the two methods based on testing of a variety of solar cells. The first method is a lock-in technique that can be performed over a broad pulse frequency range. The second method is based on synchronous multifrequency optical excitation and electrical detection. An innovative scheme for providing light bias during each measurement method is discussed.

  13. Group III nitride semiconductors for short wavelength light-emitting devices

    Science.gov (United States)

    Orton, J. W.; Foxon, C. T.

    1998-01-01

    The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so

  14. Polaron self-localization in white-light emitting hybrid perovskites

    KAUST Repository

    Cortecchia, Daniele

    2017-02-03

    Two-dimensional (2D) perovskites with the general formula APbX are attracting increasing interest as solution processable, white-light emissive materials. Recent studies have shown that their broadband emission is related to the formation of intra-gap colour centres. Here, we provide an in-depth description of the charge localization sites underlying the generation of such radiative centres and their corresponding decay dynamics, highlighting the formation of small polarons trapped within their lattice distortion field. Using a combination of spectroscopic techniques and first-principles calculations to study the white-light emitting 2D perovskites (EDBE)PbCl and (EDBE)PbBr, we infer the formation of Pb , Pb, and X (where X = Cl or Br) species confined within the inorganic perovskite framework. Due to strong Coulombic interactions, these species retain their original excitonic character and form self-trapped polaron-excitons acting as radiative colour centres. These findings are expected to be relevant for a broad class of white-light emitting perovskites with large polaron relaxation energy.

  15. A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    Rugang Geng

    2016-09-01

    Full Text Available In the preceding review paper, Paper I [Journal of Science: Advanced Materials and Devices 1 (2016 128–140], we showed the major experimental and theoretical studies on the first organic spintronic subject, namely organic magnetoresistance (OMAR in organic light emitting diodes (OLEDs. The topic has recently been of renewed interest as a result of a demonstration of the magneto-conductance (MC that exceeds 1000% at room temperature using a certain type of organic compounds and device operating condition. In this report, we will review two additional organic spintronic devices, namely organic spin valves (OSVs where only spin polarized holes exist to cause magnetoresistance (MR, and spin organic light emitting diodes (spin-OLEDs where both spin polarized holes and electrons are injected into the organic emissive layer to form a magneto-electroluminescence (MEL hysteretic loop. First, we outline the major advances in OSV studies for understanding the underlying physics of the spin transport mechanism in organic semiconductors (OSCs and the spin injection/detection at the organic/ferromagnet interface (spinterface. We also highlight some of outstanding challenges in this promising research field. Second, the first successful demonstration of spin-OLEDs is reviewed. We also discuss challenges to achieve the high performance devices. Finally, we suggest an outlook on the future of organic spintronics by using organic single crystals and aligned polymers for the spin transport layer, and a self-assembled monolayer to achieve more controllability for the spinterface.

  16. Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices

    Science.gov (United States)

    Hsun Su, Yen; Hsu, Chia-Yun; Chang, Chung-Chien; Tu, Sheng-Lung; Shen, Yun-Hwei

    2013-08-01

    Ultra-thin titanium films were deposited via ultra-high vacuum ion beam sputter deposition. Since the asymmetric electric field of the metal foil plane matches the B-band absorption of chlorophyll a, the ultra-thin titanium nanolayers were able to generate surface plasmon resonance, thus enhancing the photoluminescence of chlorophyll a. Because the density of the states of plasmon resonance increases, the enhancement of photoluminescence also rises. Due to the biocompatibility and inexpensiveness of titanium, it can be utilized to enhance the bioluminescence of chloroplast in biological light emitting devices, bio-laser, and biophotonics.

  17. Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Hsun Su, Yen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, Chia-Yun; Chang, Chung-Chien [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Tu, Sheng-Lung; Shen, Yun-Hwei [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2013-08-05

    Ultra-thin titanium films were deposited via ultra-high vacuum ion beam sputter deposition. Since the asymmetric electric field of the metal foil plane matches the B-band absorption of chlorophyll a, the ultra-thin titanium nanolayers were able to generate surface plasmon resonance, thus enhancing the photoluminescence of chlorophyll a. Because the density of the states of plasmon resonance increases, the enhancement of photoluminescence also rises. Due to the biocompatibility and inexpensiveness of titanium, it can be utilized to enhance the bioluminescence of chloroplast in biological light emitting devices, bio-laser, and biophotonics.

  18. TOPICAL REVIEW: Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

    Science.gov (United States)

    Willander, M.; Nur, O.; Zhao, Q. X.; Yang, L. L.; Lorenz, M.; Cao, B. Q.; Zúñiga Pérez, J.; Czekalla, C.; Zimmermann, G.; Grundmann, M.; Bakin, A.; Behrends, A.; Al-Suleiman, M.; El-Shaer, A.; Che Mofor, A.; Postels, B.; Waag, A.; Boukos, N.; Travlos, A.; Kwack, H. S.; Guinard, J.; LeSi Dang, D.

    2009-08-01

    Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

  19. Treatment of a vulvar Paget's disease by photodynamic therapy with a new light emitting fabric based device.

    Science.gov (United States)

    Vicentini, Claire; Carpentier, Olivier; Lecomte, Fabienne; Thecua, Elise; Mortier, Laurent; Mordon, Serge R

    2017-02-01

    The non-invasive vulvar Paget's disease is an intra-epidermal carcinoma with glandular characteristics. It appears like an erythematous plaque. The main symptoms are pruritus and pain. The standard treatment is surgical excision in depth. This treatment is complicated with a severe morbidity and photodynamic therapy can be an alternative choice. However, the pain experienced during the photodynamic treatment of vulvar lesion is intense and leads to a premature interruption of the treatment. The light emitting fabric is a part of a device under clinical evaluation for the treatment of actinic keratosis with photodynamic therapy. We report the observation of a vulvar Paget's disease treated by this device with a satisfactory result and an excellent tolerance. The patient has been diagnosed with non-invasive vulvar Paget's disease for 25 years. The disease recurred constantly despite several imiquimod applications, LASER treatments and conventional photodynamic therapy. These procedures were complicated with intense pain. To improve the tolerance, we performed three PDT sessions a month apart using a 16% methyl-aminolevulinate cream (Metvixia® Galderma, Lausanne, Switzerland) with the light emitting fabric at low irradiance (irradiance = 6 mW/cm(2) -fluence = 37 J/cm(2) ) with a satisfactory result and an excellent tolerance. There are no controlled trials evaluating the efficacy of photodynamic therapy in the treatment of vulvar Paget's disease. The treatment and follow-up protocols in the literature are heterogeneous. Pain is the most common side effect with greater intensity for perineal locations where photodynamic therapy is impractical outside of anesthesia or hypnosis. We report the case of a multirecidivant non-invasive vulvar Paget's disease treated with a satisfactory result and an excellent tolerance by the new light emitting fabric device. A specific study is required but the light emitting fabric could be indicated for the treatment of Paget

  20. Modeling of organic light emitting diodes: from molecular to device properties (Conference Presentation)

    Science.gov (United States)

    Andrienko, Denis; Kordt, Pascal; May, Falk; Badinski, Alexander; Lennartz, Christian

    2016-09-01

    We will review the progress in modeling of charge transport in disordered organic semiconductors on various length-scales, from atomistic to macroscopic. This includes evaluation of charge transfer rates from first principles, parametrization of coarse-grained lattice and off-lattice models, and solving the master and drift-diffusion equations. Special attention is paid to linking the length-scales and improving the efficiency of the methods. All techniques will be illustrated on an amorphous organic semiconductor, DPBIC, a hole conductor and electron blocker used in state of the art organic light emitting diodes (OLEDs). The outlined multiscale scheme can be used to predict OLED properties without fitting parameters, starting from chemical structures of compounds.

  1. A spectrally tunable all-graphene-based flexible field-effect light-emitting device

    Science.gov (United States)

    Wang, Xiaomu; Tian, He; Mohammad, Mohammad Ali; Li, Cheng; Wu, Can; Yang, Yi; Ren, Tian-Ling

    2015-07-01

    The continuous tuning of the emission spectrum of a single light-emitting diode (LED) by an external electrical bias is of great technological significance as a crucial property in high-quality displays, yet this capability has not been demonstrated in existing LEDs. Graphene, a tunable optical platform, is a promising medium to achieve this goal. Here we demonstrate a bright spectrally tunable electroluminescence from blue (~450 nm) to red (~750 nm) at the graphene oxide/reduced-graphene oxide interface. We explain the electroluminescence results from the recombination of Poole-Frenkel emission ionized electrons at the localized energy levels arising from semi-reduced graphene oxide, and holes from the top of the π band. Tuning of the emission wavelength is achieved by gate modulation of the participating localized energy levels. Our demonstration of current-driven tunable LEDs not only represents a method for emission wavelength tuning but also may find applications in high-quality displays.

  2. Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices

    Science.gov (United States)

    Irrera, Alessia; Iacona, Fabio; Franzò, Giorgia; Miritello, Maria; Lo Savio, Roberto; Castagna, Maria Eloisa; Coffa, Salvatore; Priolo, Francesco

    2010-03-01

    We investigated the properties of light emitting devices whose active layer consists of Er-doped Si nanoclusters (nc) generated by thermal annealing of Er-doped SiOx layers prepared by magnetron cosputtering. Differently from a widely used technique such as plasma enhanced chemical vapor deposition, sputtering allows to synthesize Er-doped Si nc embedded in an almost stoichiometric oxide matrix, so as to deeply influence the electroluminescence properties of the devices. Relevant results include the need for an unexpected low Si excess for optimizing the device efficiency and, above all, the strong reduction of the influence of Auger de-excitation, which represents the main nonradiative path which limits the performances of such devices and their application in silicon nanophotonics.

  3. Photoluminescence and carrier transport mechanisms of silicon-rich silicon nitride light emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Wugang [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Yao, Wei [Shenzhen Institute of Huazhong University of Science and Technology, Shenzhen 518000 (China); Wen, Xixing [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2015-10-01

    Highlights: • Amorphous silicon quantum dots (a-Si QDs) embedded in silicon nitride were fabricated using plasma-enhanced chemical vapor deposition (PECVD). • Two different excitation sources were used to investigate the PL mechanisms. • Light emitting diode (LED) with ITO/SiNx/p-Si/Al structure was fabricated and the carrier transport mechanisms were investigated. - Abstract: Silicon-rich silicon nitride (SRSN) films were prepared on p-type silicon substrates using plasma-enhanced chemical vapor deposition (PECVD). Small size (∼3 nm) amorphous silicon quantum dots (a-Si QDs) were obtained after 1100 °C annealing. Two different excitation sources, namely 325 nm and 532 nm lasers, were introduced to investigate the photoluminescence (PL) properties. The PL bands pumped by 325 nm laser at ∼2.90 eV and ∼1.80 eV were contributed to the radiative centers from N dangling bonds (DBs), while the dominant PL bands at 2.10 eV were ascribed to the instinct PL centers in the nitride matrix. However, PL emissions from band tail luminescence and quantum confined effect (QCE) in a-Si QDs were found under the excitation of 532 nm laser. Light emitting diode (LED) with ITO/SiNx/p-Si/Al structure was fabricated. Intensely red light emission was observed by naked eyes at room temperature under forward 20 V. Three different carrier transport mechanisms, namely Poole–Frenkel (P–F) tunneling, Fowler–Nordheim (F–N) tunneling and space charge limited current (SCLC), were found to fit different electric field regions. These results help to understand the PL mechanisms and to optimize the fabrication of a-Si QD LED.

  4. Quantum dots light emitting devices on MEMS: microcontact printing, near-field imaging, and early cancer detection

    Science.gov (United States)

    Gopal, Ashwini; Hoshino, Kazunori; Zhang, John X. J.

    2011-08-01

    Controlled patterning of light emitting devices on semiconductors and micro-electro-mechanical systems (MEMS) enables a vast variety of applications such as structured illumination, large-area flexible displays, integrated optoelectronic systems and micro-total analysis systems for real-time biomedical screening. We have demonstrated a series of techniques of creating quantum dot-based (QD) patterned inorganic light emitting devices at room temperature on silicon (Si) substrate. The innovative technology was translated to create localized QD-based light sources for two applications: (1) Three-dimensional scanning probe tip structures for near field imaging. Combined topographic and optical images were acquired using this new class of "self-illuminating" probe in commercial NSOM. The emission wavelength can be tuned through quantum-size effect of QDs. (2) Multispectral excitation sources integrated with microfluidic channels for tumor cell analyses. We were able to detect the variation of sub-cellular features, such as the nucleus-to-cytoplasm ratio, to quantify the absorption at different wavelength upon the near-field illumination of individual tumor cells towards the determination of cancer developmental stage.

  5. Device characteristics and thermal analysis of GaN-based vertical light-emitting diodes with different types of packages

    Science.gov (United States)

    Guan, Xiang-Yu; Lee, Hee Kwan; Lee, Soo Hyun; Yu, Jae Su

    2017-01-01

    We investigated the device characteristics of GaN-based blue vertical light-emitting diodes (VLEDs) with two different package structures (i.e., lead frame with metal/plastic body (MPLF package) and lead frame with metal body (MLF package)) under various measurement conditions. In comparison with the MPLF packaged VLEDs, the MLF packaged VLEDs exhibited relatively lower junction temperature and thermal resistance values due to the better heat dissipation capability, leading to further improved optical, spectral, and thermal device characteristics. Thermal simulations of the VLEDs with two different packages were performed using three-dimensional steady-state device models to theoretically calculate their thermal and mechanical behaviours. The maximum temperatures, internal temperature distributions, and thermomechanical stresses were analysed by a finite element method.

  6. Enhanced efficiency of organic light-emitting devices with corrugated nanostructures based on soft nano-imprinting lithography

    Science.gov (United States)

    Liu, Yue-Feng; An, Ming-Hui; Zhang, Xu-Lin; Bi, Yan-Gang; Yin, Da; Zhang, Yi-Fan; Feng, Jing; Sun, Hong-Bo

    2016-11-01

    An enhanced efficiency organic light-emitting device (OLED) with corrugated nanostructures on a small-molecule organic film has been demonstrated. By patterning the hole transport layer via soft nano-imprinting lithography and coating with Ag, a nanostructured cathode is introduced to enhance the light extraction of the OLED without affecting the flatness and conductivity of the indium-tin-oxide film. Both luminance and current efficiency are improved compared with those of conventional planar devices. The observable improvement in luminance and current efficiency can be ascribed to the surface plasmonic and scattering effects caused by the Ag nanostructures. Moreover, theoretical simulations also demonstrate that the power loss to surface plasmon-polariton modes has been recovered.

  7. Thin film encapsulation for organic light-emitting diodes using inorganic/organic hybrid layers by atomic layer deposition.

    Science.gov (United States)

    Zhang, Hao; Ding, He; Wei, Mengjie; Li, Chunya; Wei, Bin; Zhang, Jianhua

    2015-01-01

    A hybrid nanolaminates consisting of Al2O3/ZrO2/alucone (aluminum alkoxides with carbon-containing backbones) grown by atomic layer deposition (ALD) were reported for an encapsulation of organic light-emitting diodes (OLEDs). The electrical Ca test in this study was designed to measure the water vapor transmission rate (WVTR) of nanolaminates. We found that moisture barrier performance was improved with the increasing of the number of dyads (Al2O3/ZrO2/alucone) and the WVTR reached 8.5 × 10(-5) g/m(2)/day at 25°C, relative humidity (RH) 85%. The half lifetime of a green OLED with the initial luminance of 1,500 cd/m(2) reached 350 h using three pairs of the Al2O3 (15 nm)/ZrO2 (15 nm)/alucone (80 nm) as encapsulation layers.

  8. High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

    2012-03-30

    Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

  9. Organic/Organic' heterojunctions: organic light emitting diodes and organic photovoltaic devices.

    Science.gov (United States)

    Armstrong, Neal R; Wang, Weining; Alloway, Dana M; Placencia, Diogenes; Ratcliff, Erin; Brumbach, Michael

    2009-05-19

    Heterojunctions created from thin films of two dissimilar organic semiconductor materials [organic/organic' (O/O') heterojunctions] are an essential component of organic light emitting diode displays and lighting systems (OLEDs, PLEDs) and small molecule or polymer-based organic photovoltaic (solar cell) technologies (OPVs). O/O' heterojunctions are the site for exciton formation in OLEDs, and the site for exciton dissociation and photocurrent production in OPVs. Frontier orbital energy offsets in O/O' heterojunctions establish the excess free energy controlling rates of charge recombination and formation of emissive states in OLEDs and PLEDs. These energy offsets also establish the excess free energy which controls charge separation and the short-circuit photocurrent (J(SC) ) in OPVs, and set the upper limit for the open-circuit photopotential (V(OC) ). We review here how these frontier orbital energy offsets are determined using photoemission spectroscopies, how these energies change as a function of molecular environment, and the influence of interface dipoles on these frontier orbital energies. Recent examples of heterojunctions based on small molecule materials are shown, emphasizing those heterojunctions which are of interest for photovoltaic applications. These include heterojunctions of perylenebisimide dyes with trivalent metal phthalocyanines, and heterojunctions of titanyl phthalocyanine with C(60) , and with pentacene. Organic solar cells comprised of donor/acceptor pairs of each of these last three materials confirm that the V(OC) scales with the energy offsets between the HOMO of the donor and LUMO of the acceptor ($E_{{\\rm HOMO}^{\\rm D} } - E_{{\\rm LUMO}^{\\rm A} }$).

  10. Silver Nanowire-IZO-Conducting Polymer Hybrids for Flexible and Transparent Conductive Electrodes for Organic Light-Emitting Diodes

    Science.gov (United States)

    Yun, Ho Jun; Kim, Se Jung; Hwang, Ju Hyun; Shim, Yong Sub; Jung, Sun-Gyu; Park, Young Wook; Ju, Byeong-Kwon

    2016-01-01

    Solution-processed silver nanowire (AgNW) has been considered as a promising material for next-generation flexible transparent conductive electrodes. However, despite the advantages of AgNWs, some of their intrinsic drawbacks, such as large surface roughness and poor interconnection between wires, limit their practical application in organic light-emitting diodes (OLEDs). Herein, we report a high-performance AgNW-based hybrid electrode composed of indium-doped zinc oxide (IZO) and poly (3,4-ethylenediowythiophene):poly(styrenesulfonate) [PEDOT:PSS]. The IZO layer protects the underlying AgNWs from oxidation and corrosion and tightly fuses the wires together and to the substrate. The PEDOT:PSS effectively reduces surface roughness and increases the hybrid films’ transmittance. The fabricated electrodes exhibited a low sheet resistance of 5.9 Ωsq−1 with high transmittance of 86% at 550 nm. The optical, electrical, and mechanical properties of the AgNW-based hybrid films were investigated in detail to determine the structure-property relations, and whether optical or electrical properties could be controlled with variation in each layer’s thickness to satisfy different requirements for different applications. Flexible OLEDs (f-OLEDs) were successfully fabricated on the hybrid electrodes to prove their applicability; their performance was even better than those on commercial indium doped tin oxide (ITO) electrodes. PMID:27703182

  11. Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability.

    Science.gov (United States)

    Kim, Kyeong Heon; Kim, Su Jin; Lee, Tae Ho; Lee, Byeong Ryong; Kim, Tae Geun

    2016-08-08

    Transparent conductive electrodes with good conductivity and optical transmittance are an essential element for highly efficient light-emitting diodes. However, conventional indium tin oxide and its alternative transparent conductive electrodes have some trouble with a trade-off between electrical conductivity and optical transmittance, thus limiting their practical applications. Here, we present silicon nitride transparent conductive electrodes with conducting filaments embedded using the electrical breakdown process and investigate the dependence of the conducting filament density formed in the transparent conductive electrode on the device performance of gallium nitride-based vertical light-emitting diodes. Three gallium nitride-on-silicon-based vertical light-emitting diodes using silicon nitride transparent conductive electrodes with high, medium, and low conducting filament densities were prepared with a reference vertical light-emitting diode using metal electrodes. This was carried to determine the optimal density of the conducting filaments in the proposed silicon nitride transparent conductive electrodes. In comparison, the vertical light-emitting diodes with a medium conducting filament density exhibited the lowest optical loss, direct ohmic behavior, and the best current injection and distribution over the entire n-type gallium nitride surface, leading to highly reliable light-emitting diode performance.

  12. Ultraviolet electroluminescence properties from devices based on n-ZnO/i-NiO/p-Si light-emitting diode

    Science.gov (United States)

    Wang, Hui; Zhao, Yang; Wu, Chao; Wu, Guoguang; Ma, Yan; Dong, Xin; Zhang, Baolin; Du, Guotong

    2017-07-01

    We fabricated the Ultraviolet light-emitting diode (LED) based on n-ZnO/i-NiO/p-Si heterostructure by metal-organic chemical vapor deposition (MOCVD). The device exhibited diode-like rectifying characteristics with a turn-on voltage of 3.2 V. The NiO film with high resistance state and [200] preferred orientation acted as an electron blocking layer, which produced a larger ZnO/NiO conduction band offset of 2.93 eV than that of ZnO/Si (0.30 eV). Under forward bias, prominent ultraviolet emissions peaked around 375 nm accompanying with rather weak blue-white emissions peaked around 480 nm were observed at room temperature. Furthermore, the mechanism of the electroluminescence was tentatively discussed in terms of the band diagram of the diode.

  13. Preparation of organic light-emitting diode using coal tar pitch, a low-cost material, for printable devices.

    Directory of Open Access Journals (Sweden)

    Miki Yamaoka

    Full Text Available We have identified coal tar pitch, a very cheap organic material made from coal during the iron-making process, as a source from which could be obtained emissive molecules for organic light-emitting diodes. Coal tar pitch was separated by simple dissolution in organic solvent, and subsequent separation by preparative thin-layer chromatography was used to obtain emissive organic molecules. The retardation factor of preparative thin-layer chromatography played a major role in deciding the emission characteristics of the solution as photoluminescence spectra and emission-excitation matrix spectra could be controlled by modifying the solution preparation method. In addition, the device characteristics could be improved by modifying the solution preparation method. Two rounds of preparative thin-layer chromatography separation could improve the luminance of organic light-emitting diodes with coal tar pitch, indicating that less polar components are favorable for enhancing the luminance and device performance. By appropriate choice of the solvent, the photoluminescence peak wavelength of separated coal tar pitch could be shifted from 429 nm (cyclohexane to 550 nm (chloroform, and consequently, the optical properties of the coal tar pitch solution could be easily tuned. Hence, the use of such multicomponent materials is advantageous for fine-tuning the net properties at a low cost. Furthermore, an indium tin oxide/poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate/coal tar pitch/LiF/Al system, in which the emissive layer was formed by spin-coating a tetrahydrofuran solution of coal tar pitch on the substrate, showed a luminance of 176 cd/m(2. In addition, the emission spectrum of coal tar pitch was narrowed after the preparative thin-layer chromatography process by removing the excess emissive molecules.

  14. Preparation of organic light-emitting diode using coal tar pitch, a low-cost material, for printable devices.

    Science.gov (United States)

    Yamaoka, Miki; Asami, Shun-Suke; Funaki, Nayuta; Kimura, Sho; Yingjie, Liao; Fukuda, Takeshi; Yamashita, Makoto

    2013-01-01

    We have identified coal tar pitch, a very cheap organic material made from coal during the iron-making process, as a source from which could be obtained emissive molecules for organic light-emitting diodes. Coal tar pitch was separated by simple dissolution in organic solvent, and subsequent separation by preparative thin-layer chromatography was used to obtain emissive organic molecules. The retardation factor of preparative thin-layer chromatography played a major role in deciding the emission characteristics of the solution as photoluminescence spectra and emission-excitation matrix spectra could be controlled by modifying the solution preparation method. In addition, the device characteristics could be improved by modifying the solution preparation method. Two rounds of preparative thin-layer chromatography separation could improve the luminance of organic light-emitting diodes with coal tar pitch, indicating that less polar components are favorable for enhancing the luminance and device performance. By appropriate choice of the solvent, the photoluminescence peak wavelength of separated coal tar pitch could be shifted from 429 nm (cyclohexane) to 550 nm (chloroform), and consequently, the optical properties of the coal tar pitch solution could be easily tuned. Hence, the use of such multicomponent materials is advantageous for fine-tuning the net properties at a low cost. Furthermore, an indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/coal tar pitch/LiF/Al system, in which the emissive layer was formed by spin-coating a tetrahydrofuran solution of coal tar pitch on the substrate, showed a luminance of 176 cd/m(2). In addition, the emission spectrum of coal tar pitch was narrowed after the preparative thin-layer chromatography process by removing the excess emissive molecules.

  15. White Organic Light-Emitting Devices Based on 2-(2-Hydroxyphenyl) Benzothiazole and Its Chelate Metal Complex

    Institute of Scientific and Technical Information of China (English)

    WU Xiao-Ming; HUA Yu-Lin; WANG Zhao-Qi; ZHENG Jia-Jin; FENG Xiu-Lan; SUN Yuan-Yuan

    2005-01-01

    @@ We present three kinds of organic light-emitting devices (OLED) fabricated to achieve the emission of bright and pure white light. Device A, with a double-layered structure using 2-(2-hydroxyphenyl) benzothiazole (HBT) and poly (N-vinylcarbazole) (PVK) as the emitting layer (EML) and the hole transport layer (HTL) respectively,could realize the blue-green light emission. Bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTZ)2), synthesized with zinc acetate dihydrate and HBT to form a complex, is used as main EMLs in a similar structure to fabricate devices B and C. Bright and pure white light emissions can be obtained from device C which was fabricated with a green-white emitting host Zn(BTZ)2 and red dopant 5,6,11,12-tetraphenylnaphthacene (rubrene). The maximum quantum efficiency of device C could reach 0.63%, and the corresponding brightness and CIE coordinates were 4000cd/m2 and (x = 0.341, y = 0.334) at the driving voltage of 20 V.

  16. Optical Properties of Hybrid Inorganic/Organic Thin Film Encapsulation Layers for Flexible Top-Emission Organic Light-Emitting Diodes.

    Science.gov (United States)

    An, Jae Seok; Jang, Ha Jun; Park, Cheol Young; Youn, Hongseok; Lee, Jong Ho; Heo, Gi-Seok; Choi, Bum Ho; Lee, Choong Hun

    2015-10-01

    Inorganic/organic hybrid thin film encapsulation layers consist of a thin Al2O3 layer together with polymer material. We have investigated optical properties of thin film encapsulation layers for top-emission flexible organic light-emitting diodes. The transmittance of hybrid thin film encapsulation layers and the electroluminescent spectrum of organic light-emitting diodes that were passivated by hybrid organic/inorganic thin film encapsulation layers were also examined as a function of the thickness of inorganic Al203 and monomer layers. The number of interference peaks, their intensity, and their positions in the visible range can be controlled by varying the thickness of inorganic Al2O3 layer. On the other hand, changing the thickness of monomer layer had a negligible effect on the optical properties. We also verified that there is a trade-off between transparency in the visible range and the permeation of water vapor in hybrid thin film encapsulation layers. As the number of dyads decreased, optical transparency improved while the water vapor permeation barrier was degraded. Our study suggests that, in top-emission organic light-emitting diodes, the thickness of each thin film encapsulation layer, in particular that of the inorganic layer, and the number of dyads should be controlled for highly efficient top-emission flexible organic light-emitting diodes.

  17. Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer

    Institute of Scientific and Technical Information of China (English)

    Jiauo Zhi-Qiang; Wu Xiao-Ming; Hua Yu-Lin; Dong Mu-Sen; Su Yue-Ju; Shen Li-Ying; Yin Shou-Gen

    2011-01-01

    The efficiency of organic light-emitting devices (OLEDs) based on N,N'-bis(1-naphthyl)-N,N'-diphenyl-N,l' biphenyl-4,4'-diamine (NPB) (the hole transport layer) and tris(8-hydroxyquinoline) aluminum (Alq3) (both emission and electron transport layers) is improved remarkably by inserting a LiF interlayer into the hole transport layer.This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device.A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm2,which is about 86% higher than that of an ordinary device (without a LiF interlayer,3.2 cd/A).An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons.The results may provide some valuable references for improving OLED current efficiency.

  18. A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yue; Wu, Zhaoxin, E-mail: zhaoxinwu@mail.xjtu.edu.cn; He, Lin; Jiao, Bo; Hou, Xun

    2015-08-31

    We developed a solvent/non-solvent system to fabricate the multilayer organic light-emitting devices (OLEDs) based on poly(N-vinylcarbazole) (PVK) by solution-process. This solvent system consists of both the solvent and non-solvent of PVK, in which fluorescent small molecules could be fully dissolved and directly spin-coated on top of the PVK layer; it could effectively avoid the redissolution of PVK during the spin-coating process of small molecules emitting layer. In the further investigation of this system, we also demonstrated the three-component solvent system, and found out that the third component, a less volatile solvent of PVK, was crucial for preparing a smoother interface between PVK and emitting layer. Compared with OLEDs through the vacuum deposition, the devices fabricated by solution-process from the solvent/non-solvent system showed comparable efficiency, which indicate that the solvent/non-solvent system can be used as an alternative process to prepare the polymer and small molecule multilayer devices through all-solution-process. - Highlights: • We fabricate the multilayer OLEDs by solution-process using a novel system. • We develop a solvent/non-solvent system of polymer (PVK) to avoid redissolution. • Small molecules could be fully dissolved and directly spin-coated on PVK layer. • The devices fabricated by the system and vacuum deposition show comparable efficiency.

  19. Improving Light Extraction of Organic Light-Emitting Devices by Attaching Nanostructures with Self-Assembled Photonic Crystal Patterns

    Directory of Open Access Journals (Sweden)

    Kai-Yu Peng

    2014-01-01

    Full Text Available A single-monolayered hexagonal self-assembled photonic crystal (PC pattern fabricated onto polyethylene terephthalate (PET films by using simple nanosphere lithography (NSL method has been demonstrated in this research work. The patterned nanostructures acted as a scattering medium to extract the trapped photons from substrate mode of optical-electronic device for improving the overall external quantum efficiency of the organic light-emitting diodes (OLEDs. With an optimum latex concentration, the distribution of self-assembled polystyrene (PS nanosphere patterns on PET films can be easily controlled by adjusting the rotation speed of spin-coater. After attaching the PS nanosphere array brightness enhancement film (BEF sheet as a photonic crystal pattern onto the device, the luminous intensity of OLEDs in the normal viewing direction is 161% higher than the one without any BEF attachment. The electroluminescent (EL spectrum of OLEDs with PS patterned BEF attachment also showed minor color offset and superior color stabilization characteristics, and thus it possessed the potential applications in all kinds of display technology and solid-state optical-electronic devices.

  20. High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Hongying; Deng, Lingling; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Huang, Wei, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816 (China)

    2014-04-15

    Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

  1. Synthesis and Property of New Propeller Shaped Emitting Materials for Organic Light-Emitting Devices.

    Science.gov (United States)

    Kang, Seokwoo; Lee, Hayoon; Kim, Beomjin; Park, Youngil; Park, Jongwook

    2016-03-01

    New propeller type emitting compound, namely 3,6-di-anthracen-9-yl-9,10-bis-(4-anthracen-9-yi-phenyl)-phenanthrene[TAnDAP] and 3,6-bis-(10-phenyl-anthracen-9-yl)-9,10-bis-[4-(10-phenyl-anthracen-9-yl)-phenyl]-phenanthrene [TAnPDAP] were synthesized through Suzuki and McMurry reactions. We investigated their physical properties such as optical, electrochemical, and electroluminescent properties. The two compounds were used as an emitting layer in OLED devices: ITO/2-TNATA (60 nm)/NPB (15 nm)/non-doped: TAnDAP or TAnPDAP (35 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). The TAnDAP OLED device showed C.I.E. value of (0.28, 0.41) and luminance efficiency of 3.81 cd/A at 10 mA/cm2. The TAnPDAP device showed C.I.E. value of (0.20, 0.27) and high luminance efficiency of 5.40 cd/A at 10 mA/cm2. TAnPDAP was found to show better luminance efficiency and C.I.E. value than TAnDAP because it has a bulky 9-phenylanthracene.

  2. A Rat Model of Thrombosis in Common Carotid Artery Induced by Implantable Wireless Light-Emitting Diode Device

    Directory of Open Access Journals (Sweden)

    Jih-Chao Yeh

    2014-01-01

    Full Text Available This work has developed a novel approach to form common carotid artery (CCA thrombus in rats with a wireless implantable light-emitting diode (LED device. The device mainly consists of an external controller and an internal LED assembly. The controller was responsible for wirelessly transmitting electrical power. The internal LED assembly served as an implant to receive the power and irradiate light on CCA. The thrombus formation was identified with animal sonography, 7T magnetic resonance imaging, and histopathologic examination. The present study showed that a LED assembly implanted on the outer surface of CCA could induce acute occlusion with single irradiation with 6 mW/cm2 LED for 4 h. If intermittent irradiation with 4.3–4.5 mW/cm2 LED for 2 h was shut off for 30 min, then irradiation for another 2 h was applied; the thrombus was observed to grow gradually and was totally occluded at 7 days. Compared with the contralateral CCA without LED irradiation, the arterial endothelium in the LED-irradiated artery was discontinued. Our study has shown that, by adjusting the duration of irradiation and the power intensity of LED, it is possible to produce acute occlusion and progressive thrombosis, which can be used as an animal model for antithrombotic drug development.

  3. Low-temperature synthesis of indium tin oxide nanowires as the transparent electrodes for organic light emitting devices.

    Science.gov (United States)

    Kee, Yeh Yee; Tan, Sek Sean; Yong, Thian Khok; Nee, Chen Hon; Yap, Seong Shan; Tou, Teck Yong; Sáfrán, György; Horváth, Zsolt Endre; Moscatello, Jason P; Yap, Yoke Khin

    2012-01-20

    Low-temperature growth of indium tin oxide (ITO) nanowires (NWs) was obtained on catalyst-free amorphous glass substrates at 250 °C by Nd:YAG pulsed-laser deposition. These ITO NWs have branching morphology as grown in Ar ambient. As suggested by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM), our ITO NWs have the tendency to grow vertically outward from the substrate surface, with the (400) plane parallel to the longitudinal axis of the nanowires. These NWs are low in electrical resistivity (1.6×10⁻⁴ Ω cm) and high in visible transmittance (~90–96%), and were tested as the electrode for organic light emitting devices (OLEDs). An enhanced current density of ~30 mA cm⁻² was detected at bias voltages of ~19–21 V with uniform and bright emission. We found that the Hall mobility of these NWs is 2.2–2.7 times higher than that of ITO film, which can be explained by the reduction of Coulomb scattering loss. These results suggested that ITO nanowires are promising for applications in optoelectronic devices including OLED, touch screen displays, and photovoltaic solar cells.

  4. Organic Light-Emitting Devices with a LiF Hole Blocking Layer

    Institute of Scientific and Technical Information of China (English)

    LIAN Jia-Rong; YUAN Yong-Bo; ZHOU Xiang

    2007-01-01

    We introduce a thin LiF layer into tris-8-hydroxyquinoline aluminium (Alq3) based bilayer organic light-emittingdevices to block hole transport. By varying the thickness and position of this LiF layer in Alq3, we obtain an electroluminescent efficiency increase by a factor of two with respect to the control devices without a LiF blocking layer. By using a 10nm dye doped Alq3 sensor layer, we prove that LiF can block holes and excitons effectively.Experimental results suggest that the thin LiF layer may be a good hole and exciton blocking layer.

  5. Nitride based quantum well light-emitting devices having improved current injection efficiency

    Science.gov (United States)

    Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

    2014-12-09

    A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

  6. Preparation of organic light-emitting diode using coal tar pitch, a low-cost material, for printable devices

    National Research Council Canada - National Science Library

    Yamaoka, Miki; Asami, Shun-Suke; Funaki, Nayuta; Kimura, Sho; Yingjie, Liao; Fukuda, Takeshi; Yamashita, Makoto

    2013-01-01

    We have identified coal tar pitch, a very cheap organic material made from coal during the iron-making process, as a source from which could be obtained emissive molecules for organic light-emitting diodes...

  7. Study of liquid transparent encapsulants for the packaging of light emitting diode and other optoelectronic devices

    Science.gov (United States)

    Zhou, Yan

    Optically transparent polymeric materials required for the encapsulation of optoelectronic chips are critical to the manufacturability, cost, performance, and reliability of LED and other optoelectronic devices. This work is focused on the development of the transparent epoxy based liquid encapsulants with the objective to enhance the manufacturability, to reduce the cost, and to improve both the performance and the reliability of the packaged optoelectronic devices. First, three transparent encapsulants based on different chemistries were reviewed and their properties compared. These encapsulant systems serve as models of different epoxy chemistries suitable for LED applications. The experimental result gives an overview of the characteristics of each system and guides the further development of the encapsulant for different packaging needs. Then, two new encapsulants were developed and introduced. The first one was a two-component encapsulant based on DGEBA/MHHPA chemistry, but provides lower internal stress, better transmission retention upon thermal aging, and easier processing compared with the current best performer based on the same chemistry. The second one is a novel one-component, low temperature and fast cure encapsulant with a high refractive index of 1.6. This encapsulant provides not only the easy handling, convenient storage, and energy saving, but also higher light output for the packaged LED devices. The third part of this work deals with nanocomposites based on aromatic epoxy and cycloaliphatic epoxy. It was found that these composites provide lower CTE, better toughness, and other advantages while keeping good transparency, therefore are suitable for LED applications. Toughening is another topic studied. Three toughened transparent encapsulants were introduced and compared. The toughening agents selected effectively increased the toughness of the cycloaliphatic epoxy/MHHPA system with minimum negative effect on the transmission of the

  8. Organic light emitting devices with doped electron transport and hole blocking layers

    Energy Technology Data Exchange (ETDEWEB)

    Tardy, J. [Laboratoire d' Electronique, Optoelectronique et Microsystemes (LEOM, UMR CNRS no 5512) Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully Cedex (France)]. E-mail: jacques.tardy@ec-lyon.fr; Khalifa, M. Ben [Laboratoire d' Electronique, Optoelectronique et Microsystemes (LEOM, UMR CNRS no 5512) Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully Cedex (France); Vaufrey, D. [Laboratoire d' Electronique, Optoelectronique et Microsystemes (LEOM, UMR CNRS no 5512) Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully Cedex (France)

    2006-03-15

    This study reports on heterostructure OLEDs with n-type molecularly doped electron transport layer and hole blocking layer. The influence of doping on the operating voltage and on light emission performances was investigated. The n-type doping molecule is 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) dispersed into either an 8-(hydroquinoline) aluminum (Alq) electron transport layer (ETL) or a 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (Bathocuproine BCP) hole blocking layer (HBL). The typical device structure is glass substrate/indium tin oxide/PEDOT/TPD-F4-TCNQ/Alq-DCM/BCP/Alq/Mg-Ag where Poly(3,4)ethylenedioxythiophene/Polystyrenesulphonate (PEDOT/PSS) is a hole injecting layer, TPD-F4-TCNQ is a hole transport layer (HTL) made of N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) doped with 2 wt.% of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4-TCNQ) and Alq-DCM is the emitting layer (EML) made of Alq doped with 2 wt.% of 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) orange dye. The modified cathode consists in a combination of a BCP HBL and an Alq ETL where BCP or/and Alq were doped with PBD. Lowest operating voltage (3 V for a luminance of 10 Cd/m{sup 2}) and brightest devices (6000 Cd/m{sup 2}) were obtained with a hole blocking bilayer made of BCP doped with 28 wt.% deposited onto an undoped BCP (each one being 5 nm thick). Adding an undoped Alq layer improved the device current efficiency (4 Cd/A) but is detrimental to the operating voltage (6 V for a luminance of 10 Cd/m{sup 2}). In the absence of real n-type doping with organic molecules, our results point out that the design of molecular doped injection layer at the cathode will need for a compromise between high luminance and efficiency on one hand and low operating voltage on the other hand.

  9. Metal-nitride-oxide-semiconductor light-emitting devices for general lighting.

    Science.gov (United States)

    Berencén, Y; Carreras, Josep; Jambois, O; Ramírez, J M; Rodríguez, J A; Domínguez, C; Hunt, Charles E; Garrido, B

    2011-05-09

    The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to low-cost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options.

  10. Bright Visible-Infrared Light Emitting Diodes Based on Hybrid Halide Perovskite with Spiro-OMeTAD as a Hole-Injecting Layer.

    Science.gov (United States)

    Jaramillo-Quintero, Oscar A; Sanchez, Rafael S; Rincon, Marina; Mora-Sero, Ivan

    2015-05-21

    Hybrid halide perovskites that are currently intensively studied for photovoltaic applications, also present outstanding properties for light emission. Here, we report on the preparation of bright solid state light emitting diodes (LEDs) based on a solution-processed hybrid lead halide perovskite (Pe). In particular, we have utilized the perovskite generally described with the formula CH3NH3PbI(3-x)Cl(x) and exploited a configuration without electron or hole blocking layer in addition to the injecting layers. Compact TiO2 and Spiro-OMeTAD were used as electron and hole injecting layers, respectively. We have demonstrated a bright combined visible-infrared radiance of 7.1 W·sr(-1)·m(-2) at a current density of 232 mA·cm(-2), and a maximum external quantum efficiency (EQE) of 0.48%. The devices prepared surpass the EQE values achieved in previous reports, considering devices with just an injecting layer without any additional blocking layer. Significantly, the maximum EQE value of our devices is obtained at applied voltages as low as 2 V, with a turn-on voltage as low as the Pe band gap (V(turn-on) = 1.45 ± 0.06 V). This outstanding performance, despite the simplicity of the approach, highlights the enormous potentiality of Pe-LEDs. In addition, we present a stability study of unsealed Pe-LEDs, which demonstrates a dramatic influence of the measurement atmosphere on the performance of the devices. The decrease of the electroluminescence (EL) under continuous operation can be attributed to an increase of the non-radiative recombination pathways, rather than a degradation of the perovskite material itself.

  11. Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

    Science.gov (United States)

    Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

    2014-09-10

    Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

  12. Structurally Integrated Photoluminescence-Based Lactate Sensor Using Organic Light Emitting Devices (OLEDs) as the Light Source

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Chengliang [Iowa State Univ., Ames, IA (United States)

    2006-01-01

    Multianalyte bio(chemical) sensors are extensively researched for monitoring analytes in complex systems, such as blood serum. As a step towards developing such multianalyte sensors, we studied a novel, structurally integrated, organic light emitting device (OLED)-based sensing platform for detection of lactate. Lactate biosensors have attracted numerous research efforts, due to their wide applications in clinical diagnosis, athletic training and food industry. The OLED-based sensor is based on monitoring the oxidation reaction of lactate, which is catalyzed by the lactate oxidase (LOX) enzyme. The sensing component is based on an oxygen-sensitive dye, Platinum octaethyl porphyrin (PtOEP), whose photoluminescence (PL) lifetime τ decreases as the oxygen level increases. The PtOEP dye was embedded in a thin film polystyrene (PS) matrix; the LOX was dissolved in solution or immobilized in a sol-gel matrix. τ was measured as a function of the lactate concentration; as the lactate concentration increases, τ increases due to increased oxygen consumption. The sensors performance is discussed in terms of the detection sensitivity, dynamic range, and response time. A response time of ~32 sec was achieved when the LOX was dissolved in solution and kept in a closed cell. Steps towards development of a multianalyte sensor array using an array of individually addressable OLED pixels were also presented.

  13. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices [rapid communication

    Science.gov (United States)

    Xu, Denghui; Deng, Zhenbo; Xu, Ying; Xiao, Jing; Liang, Chunjun; Pei, Zhiliang; Sun, Chao

    2005-10-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150 °C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4×10Ωcm and the average transmission in the visible range 400 700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm2.

  14. Efficient White Light Emission Using a Single Copolymer with Red and Green Chromophores on a Conjugated Polyfluorene Backbone Hybridized with InGaN-Based Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; HOU Qiong; NIU Qiao-Li; ZHENG Shu-Wen; LI Shu-Ti; HE Miao; FAN Guang-Han

    2009-01-01

    We report an efficient white-light emission based on a single copolymer/InGaN hybrid light-emitting diode.The single copolymer consists of a conjugated polyfluorene backbone by incorporating 2,1,3-benzothiadiazole (BT) and 4, 7-bis(2-thienyl)-2,1,3-benzothiadiazole (DBT) as green and red light-emitting units, respectively. For the single eopolymer/lnGaN hybrid device, the Commission Internationale de l'Eclairage (CIE) coordinates,color temperature Tc and color rendering index Ra at 20mA are (0.323,0.329), 5960K and 86, respectively.In comparison with the performance of red copolymer PFO-DBT15 (DOF:DBT=85:15 with DOF being 9'9-dioctylfluorene) and green copolymer PFO-BT35 (DOF:BT=65:35) blend/InGaN hybrid white devices, it is concluded that the chemically doped copolymer hybridized device shows a higher emission intensity and spectral stability at a high driving current than the polymer blend.

  15. Top-Emitting Organic Light-Emitting Devices Based on Silicon Substrate with High Luminance and Low Turn-on Voltage

    Institute of Scientific and Technical Information of China (English)

    WU Zhi-Jun; CHEN Shu-Fen; YANG Hui-Shan; ZHAO Yi; LI Chuan-Nan; HOU Jing-Ying; LIU Shi-Yong

    2005-01-01

    @@ We have fabricated a top- emitting organic light-emitting device on silicon substrate with high yellow luminance based on 5,6,11,12-tetraphenylnaphthacene sub-monolayer. It consists of a thin layer of highly conductive silver as the semitransparent cathode and surfaced-modified Ag as the anode. The device turns on at 3 V with the luminance of 8.4 cd/m2. The maximum current efficiency is 1.3 cd/A at 6 V and the luminance reaches 14790 cd/m2at 14 V. The performance of the device is excellent in top-emitting organic light-emitting devices according to our knowledge.

  16. Enhancing Optical Out-Coupling of Organic Light-Emitting Devices with Nanostructured Composite Electrodes Consisting of Indium Tin Oxide Nanomesh and Conducting Polymer.

    Science.gov (United States)

    Chen, Chien-Yu; Lee, Wei-Kai; Chen, Yi-Jiun; Lu, Chun-Yang; Lin, Hoang Yan; Wu, Chung-Chih

    2015-09-02

    A nanostructured composite electrode consisting of a high-index indium-tin-oxide nanomesh and low-index high-conductivity conducting polymer effectively enhances coupling of internal radiation of organic light-emitting devices into their substrates. When combining this internal extraction structure and the external extraction scheme, a very high external quantum efficiency of nearly 62% is achieved with a green phosphorescent device.

  17. An organic light-emitting devices of highly efficient white phosphor using an electron/exciton blocker

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Highly efficient white phosphorescent organic light-emitting devices (WOLEDs) was fabricated using an electron/exciton blocker. The device structure is ITO/2T-NATA(25 nm)/NPBX(25-dnm)/CBP:5%Ir(ppy)3:0.5%Rubrene(8 nm)/NPBX(dnm)/DPVBi(30 nm)/TPBi(20 nm)/Alq(10nm)/LiF(1nm)/Al, in which N,N' -bis- (1-naphthyl)- N,N' -dipheny1-1, 1' - bi-phenyl-4,4 ' -diamine (NPBX) functions as a hole transport layer and electron/exciton blocker, 4,4,N,N 'dicarbazolebiphenyl (CB P) is host, 4,4' -bis(2,2 -diphenyl vinyl)-1,1' -biphenyl (DPVB. i) is blue fluorescent dye, 5,6,11,12,-tetraphenylnaphthacene (rubrene) is fluorescent dye, factris (2-phenylpyridine) iridium (Ir(ppy)3) is phosphorescent sensitizer and tris(8-hydroxyquinoline) aluminum (Alq3) is an electron transport layer. The WOLEDs have obtained white light emission by adjusting the thickness of NPBX, when the concentration of Ir(ppy)3 is 5-wt% and rubrene is 0.5-wt%,respectively, the thickness of the doped emissive layer is 8 nm, the WOLEDs show a maximum luminous efficiency is 11.2 cd/A with d of 10 nm at 7 V and a maximum luminance of 28170 cd/m2 at 17 V, the CIE coordinates is (0.37.0.42), which is in white region.

  18. Cascade energy transfer versus charge separation in ladder-type oligo(p-phenylene)/ZnO hybrid structures for light-emitting applications

    Energy Technology Data Exchange (ETDEWEB)

    Bianchi, F.; Sadofev, S.; Schlesinger, R.; Koch, N.; Henneberger, F.; Blumstengel, S., E-mail: sylke.blumstengel@physik.hu-berlin.de [Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany); Kobin, B.; Hecht, S. [Institut für Chemie and IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, 12489 Berlin (Germany)

    2014-12-08

    Usability of inorganic/organic semiconductor hybrid structures for light-emitting applications can be intrinsically limited by an unfavorable interfacial energy level alignment causing charge separation and nonradiative deactivation. Introducing cascaded energy transfer funneling away the excitation energy from the interface by transfer to a secondary acceptor molecule enables us to overcome this issue. We demonstrate a substantial recovery of the light output along with high inorganic-to-organic exciton conversion rates up to room temperature.

  19. Electrochemical Light-Emitting Gel

    Directory of Open Access Journals (Sweden)

    Nobuyuki Itoh

    2010-06-01

    Full Text Available Light-emitting gel, a gel state electroluminescence material, is reported. It is composed of a ruthenium complex as the emitter, an ionic liquid as the electrolyte, and oxide nanoparticles as the gelation filler. Emitted light was produced via electrogenerated chemiluminescence. The light-emitting gel operated at low voltage when an alternating current was passed through it, regardless of its structure, which is quite thick. The luminescence property of the gel is strongly affected by nanoparticle materials. TiO2 nanoparticles were a better gelation filler than silica or ZnO was, with respect to luminescence stability, thus indicating a catalytic effect. It is demonstrated that the light-emitting gel device, with quite a simple fabrication process, flashes with the application of voltage.

  20. Atomically thin quantum light-emitting diodes

    Science.gov (United States)

    Palacios-Berraquero, Carmen; Barbone, Matteo; Kara, Dhiren M.; Chen, Xiaolong; Goykhman, Ilya; Yoon, Duhee; Ott, Anna K.; Beitner, Jan; Watanabe, Kenji; Taniguchi, Takashi; Ferrari, Andrea C.; Atatüre, Mete

    2016-09-01

    Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

  1. White organic light-emitting devices based on fac tris(2-phenylpyridine) iridium sensitized 5,6,11,12-tetraphenylnap-hthacene

    Institute of Scientific and Technical Information of China (English)

    DING Gui-ying; WANG Jin; JIANG Wen-long; WANG Jing; WANG Li-zhong; CHANG XI

    2008-01-01

    We have fabricated the white organic light-emitting devices (WOLEDs) based on 4,4'-bis(2,2-diphenyl vinyl)-1,1'-biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene (rubrene).The device structure is ITO/2T-NATA (20 nm)/NPBX (20 nm)/CBP:x%Ir(ppy)3:0.5% rubrene (8 nm)/NPBX (5 nm)/DPVBi (30 nm)/Alq(30nm)/LiF(0.5 nm)/Al.In the devices,DPVBi acts as a blue light-emitting layer,the rubrene is sensitized by a phosphorescent material,fac tris (2-phenylpyridine) iridium [Ir(ppy)3],acts as a yellow light-emitting layer,and N,N'-bis-(1-naphthyl)-N,N'-dipheny1-1,1'-biphenyl-4,4'-diamine (NPBX) acts as a hole transporting and exciton blocker layer,respectively.When the concentration of Ir(PPY)3 is 6wt%,the maximum luminance is 24960 cd/m2 at an applied voltage of 15 V,and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.

  2. GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

    Science.gov (United States)

    Chen, Siming; Li, Wei; Zhang, Ziyang; Childs, David; Zhou, Kejia; Orchard, Jonathan; Kennedy, Ken; Hugues, Maxime; Clarke, Edmund; Ross, Ian; Wada, Osamu; Hogg, Richard

    2015-08-01

    A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature.

  3. ORGANIC LIGHT EMITTING DIODE (OLED

    Directory of Open Access Journals (Sweden)

    Aririguzo Marvis Ijeaku

    2015-09-01

    Full Text Available An Organic Light Emitting Diode (OLED is a device composed of an organic layer that emits lights in response to an electrical current. Organic light emitting diodes have advanced tremendously over the past decades. The different manufacturing processes of the OLED itself to several advantages over flat panel displays made with LCD technology which includes its light weight and flexible plastic substrates, wider viewing angles, improved brightness, better power efficiency and quicker response time. However, its drawbacks include shorter life span, poor color balance, poor outdoor performance, susceptibility to water damage etc.The application of OLEDs in electronics is on the increase on daily basics from cameras to cell phones to OLED televisions, etc. Although OLEDs provides prospects for thinner, smarter, lighter and ultraflexible electronics displays, however, due to high cost of manufacturing, it is not yet widely used.

  4. Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

    Science.gov (United States)

    Mikulics, M.; Arango, Y. C.; Winden, A.; Adam, R.; Hardtdegen, A.; Grützmacher, D.; Plinski, E.; Gregušová, D.; Novák, J.; Kordoš, P.; Moonshiram, A.; Marso, M.; Sofer, Z.; Lüth, H.; Hardtdegen, H.

    2016-02-01

    We propose a device concept for a hybrid nanocrystal/III-nitride based nano-LED. Our approach is based on the direct electro-optical pumping of nanocrystals (secondary excitation) by electrically driven InGaN/GaN nano-LEDs as the primary excitation source. To this end, a universal hybrid optoelectronic platform was developed for a large range of optically active nano- and mesoscopic structures. The advantage of the approach is that the emission of the nanocrystals can be electrically induced without the need of contacting them. The proof of principal was demonstrated for the electro-optical pumping of CdSe nanocrystals. The nano-LEDs with a diameter of 100 nm exhibit a very low current of ˜8 nA at 5 V bias which is several orders of magnitude smaller than for those conventionally used. The leakage currents in the device layout were typically in the range of 8 pA to 20 pA/cm2 at 5 V bias. The photon-photon down conversion efficiency was determined to be 27%. Microphotoluminescence and microelectroluminescence characterization demonstrate the potential for future optoelectronics and highly secure "green" information technology applications.

  5. Effect of different processing methods for the hole transporting layer on the performance of double layer organic light-emitting devices

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The hole transporting layer (HTL) of organic light-emitting device (OLED) was processed by vacuum deposition and spin coating method, respectively, where N,N'-biphenyl-N, N'-bis(3-methylphenyl)-1, 1'-biphenyl-4,4' -diamine (TPD) and poly (vinylcarbazole) (PVK) acted as the hole-transport materials. Tris-(8-hydroxyquinoline)- aluminum (Alq3) was utilized as both the light-emitting layer and the electron transporting layer. The basic structure of the device cell was: indium-tin-oxide (ITO)/PVK: TPD/Alq3/Mg:Ag. The electroluminescent (EL) characteristics of devices were characterized. The results showed that the peak of EL spectra was located at 530 nm, which conformed to the characterizing spectrum of Alq3.Compared with using vacuum deposition method, the green emission with a maximum luminance up to 26135 cd/m2 could be achieved at a drive voltage of 15 V by selecting proper solvent using spin-coating technique, and its maximum luminance efficiency was 2.56 lm/W at a drive voltage of 5.5 V.

  6. Cool and warm hybrid white organic light-emitting diode with blue delayed fluorescent emitter both as blue emitter and triplet host

    Science.gov (United States)

    Cho, Yong Joo; Yook, Kyoung Soo; Lee, Jun Yeob

    2015-01-01

    A hybrid white organic light-emitting diode (WOLED) with an external quantum efficiency above 20% was developed using a new blue thermally activated delayed fluorescent material, 4,6-di(9H-carbazol-9-yl)isophthalonitrile (DCzIPN), both as a blue emitter and a host for a yellow phosphorescent emitter. DCzIPN showed high quantum efficiency of 16.4% as a blue emitter and 24.9% as a host for a yellow phosphorescent emitter. The hybrid WOLEDs with the DCzIPN host based yellow emitting layer sandwiched between DCzIPN emitter based blue emitting layers exhibited high external quantum efficiency of 22.9% with a warm white color coordinate of (0.39, 0.43) and quantum efficiency of 21.0% with a cool white color coordinate of (0.31, 0.33) by managing the thickness of the yellow emitting layer. PMID:25598436

  7. Light-Emitting Pickles

    Science.gov (United States)

    Vollmer, M.; Mollmann, K-P.

    2015-01-01

    We present experiments giving new insights into the classical light-emitting pickle experiment. In particular, measurements of the spectra and temperatures, as well as high-speed recordings, reveal that light emission is connected to the polarity of the electrodes and the presence of hydrogen.

  8. Light-Emitting Pickles

    Science.gov (United States)

    Vollmer, M.; Mollmann, K-P.

    2015-01-01

    We present experiments giving new insights into the classical light-emitting pickle experiment. In particular, measurements of the spectra and temperatures, as well as high-speed recordings, reveal that light emission is connected to the polarity of the electrodes and the presence of hydrogen.

  9. Transparent Al-doped ZnO anodes in organic light-emitting diodes investigated using a hole-only device

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, Zong-Liang [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Kao, Po-Ching [Department of Electrophysics, National Chiayi University, Chiayi 600-83, Taiwan (China); Yang, Chi-Shin [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Juang, Yung-Der [Department of Material Science, National University of Tainan, Tainan 70005, Taiwan (China); Department of Greenergy, National University of Tainan, Tainan 70005, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer OLED devices with AZO films and commercial ITO. Black-Right-Pointing-Pointer Hole-only devices with AZO film and commercial ITO anodes were used to examine the efficiency of hole injection. Black-Right-Pointing-Pointer AZO films are suitable as anodes of OLED devices under a high applied voltage. Black-Right-Pointing-Pointer The indium diffuses into the organic layer. - Abstract: Al-doped ZnO (AZO) films with a thickness of {approx}400 nm were prepared by sputtering on glass substrates for use as transparent anodes of organic light-emitting diodes (OLED) devices. The operation voltages (at 100 cd/m{sup 2}) of OLED devices with AZO and ITO anode materials were 10.5 and 5.5 V, respectively. The maximum luminance output of the AZO device was 6450 cd/m{sup 2} (achieved at 12.5 V) and that of the ITO device was 9830 cd/m{sup 2} (achieved at 10.5 V). We demonstrate that a hole-only device method can be used to estimate the suitability of AZO and ITO anodes in the OLED devices and to verify experimental results. The AZO thin films with low price and non-toxicity may be suitable as alternative anodes in OLED devices under high voltage.

  10. A review on organic spintronic materials and devices: I. Magnetic field effect on organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    Rugang Geng

    2016-06-01

    Full Text Available Organic spintronics is an emerging and potential platform for future electronics and display due to the intriguing properties of organic semiconductors (OSCs. For the past decade, studies have focused on three types of organic spintronic phenomena: (i magnetic field effect (MFE in organic light emitting diodes (OLEDs, where spin mixing between singlet and triplet polaron pairs (PP can be influenced by an external magnetic field leading to organic magnetoresistive effect (OMAR; (ii magnetoresistance (MR in organic spin valves (OSVs, where spin injection, transport, manipulation, and detection have been demonstrated; and (iii magnetoelectroluminescence (MEL bipolar OSVs or spin-OLEDs, where spin polarized electrons and holes are simultaneously injected into the OSC layer, leading to the dependence of electroluminescence intensity on relative magnetization of the electrodes. In this first of two review papers, we present major experimental results on OMAR studies and current understanding of OMAR using several spin dependent processes in organic semiconductors. During the discussion, we highlight some of the outstanding challenges in this promising research field. Finally, we provide an outlook on the future of organic spintronics.

  11. Efficiency enhancement of tandem organic light-emitting devices by a combined charge generation layer and organic n-type bis(ethylenedithio)-tetrathiafulvalene-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jin Taek; Kim, Dae Hun; Koh, Eun Im; Kim, Tae Whan

    2014-11-03

    While the operating voltage of the tandem organic light-emitting devices (OLEDs) with both an organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile charge generation layer and a bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi) electron transport layer (ETL) was 1.3 V lower than that of the tandem OLEDs with a BEDT-TTF-undoped TPBi ETL. Luminance efficiency of the tandem OLEDs with a BEDT-TTF-doped TPBi ETL was 3.6 cd/A higher than that of the typical OLEDs. The increase in the luminance efficiency and the decrease in the operating voltage of the tandem OLEDs were attributed to improved electron injection due to the insertion of the BEDT-TTF-doped TPBi ETL. - Highlights: • Tandem organic light-emitting diodes (OLED) were fabricated. • OLED fabricated with an n-type bis(ethylenedithio)-tetrathiafulvalene. • Operating voltage of the tandem OLED was decreased from 19.8 to 18.5 V. • Luminance efficiency of the tandem OLED was increased from 31.8 to 35.4 cd/A. • Enhancement of the luminance efficiency in the tandem OLED was achieved.

  12. Controlling non-radiative energy transfer in organic binary blends: a route towards colour tunability and white emission from single-active-layer light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Pisignano, Dario [NNL, National Nanotechnology Laboratory of Istituto Nazionale di Fisica della Materia (INFM), c/o Dipartimento di Ingegneria dell' Innovazione, via Arnesano, I-73100 Lecce (Italy); Mazzeo, Marco [NNL, National Nanotechnology Laboratory of Istituto Nazionale di Fisica della Materia (INFM), c/o Dipartimento di Ingegneria dell' Innovazione, via Arnesano, I-73100 Lecce (Italy); Gigli, Giuseppe [NNL, National Nanotechnology Laboratory of Istituto Nazionale di Fisica della Materia (INFM), c/o Dipartimento di Ingegneria dell' Innovazione, via Arnesano, I-73100 Lecce (Italy); Barbarella, Giovanna [Consiglio Nazionale delle Ricerche (CNR), ICOCEA, Area della Ricerca di Bologna, via Gobetti 101, I-40129 Bologna (Italy); Favaretto, Laura [Consiglio Nazionale delle Ricerche (CNR), ICOCEA, Area della Ricerca di Bologna, via Gobetti 101, I-40129 Bologna (Italy); Cingolani, Roberto [NNL, National Nanotechnology Laboratory of Istituto Nazionale di Fisica della Materia (INFM), c/o Dipartimento di Ingegneria dell' Innovazione, via Arnesano, I-73100 Lecce (Italy)

    2003-10-21

    We show how colour tunability (including white) can be achieved by controlling non-radiative intermolecular energy transfer from the donor to the acceptor in binary blends of oligomeric compounds. Blends of different concentrations of a novel functionalized thiophene-based oligomer and a low-molar-mass diamine derivative (N, N'-diphenyl-N, N'-bis(3-methylphenyl)-1, 1'-biphenyl-4.4'diamine) are used to tune both the photoluminescence and the electroluminescence (EL) from red to blue, including balanced white, according to the standards of the Commission Internationale de l'Eclairage. The single-active-layer light-emitting devices, realized by spin-coating, exhibit good EL performance. In particular, the white-emitting device shows an EL efficiency of 5 x 10{sup -1} cd A{sup -1} and a luminance of more than 180 cd m{sup -2}.

  13. Highly efficient and inverted tandem organic light-emitting devices using a MoO3/Al/MoO3 charge generation layer

    Science.gov (United States)

    Li, Ya-Ze; Lee, Chih-Chien; Li, Yan-De; Yeh, Tzu-Hung; Chang, Po-Chien; Biring, Sajal; Huang, Kuan-Chieh; Su, Chia-Hung; Liu, Shun-Wei

    2017-03-01

    We present bottom-emission, inverted, tandem phosphorescent organic light-emitting devices (PHOLEDs) using a multilayer charge generation layer (CGL) of MoO3/Al/MoO3 (MAM), which exhibits a maximum external quantum efficiency of 40% and current efficiency of 120 cd/A. In this inverted tandem structure, the feature of MAM shows a high optical transmittance (approximately 90%) in visible light, an efficient charge generation property, and a relatively smooth morphology (root mean square of ∼0.336 nm) providing an efficient CGL to connect the bottom and top display units. In addition, the device structure of ITO/LiF/TAPC/MAM/BPhen:CS2CO3/BPhen/LiF/Al was proposed to capacitance characterization, and the results demonstrated that using the ultrathin Al of ∼2 nm in a MAM structure exhibited a more efficient CGL for high performance inverted tandem PHOLEDs.

  14. Rational Design and Characterization of Heteroleptic Phosphorescent Complexes for Highly Efficient Deep-Red Organic Light-Emitting Devices.

    Science.gov (United States)

    Li, Guomeng; Li, Ping; Zhuang, Xuming; Ye, Kaiqi; Liu, Yu; Wang, Yue

    2017-03-27

    Two new deep-red iridium(III) complexes, (fpiq)2Ir(dipba) (fIr1) and (f2piq)2Ir(dipba) (dfIr2), comprising two cyclometaling ligands of fluorophenyl-isoquinoline derivatives (fpiq and f2piq) and a N-heterocyclic carbene (NHC)-based ancillary ligand of N,N'-diisopropylbenzamidinate (dipba) are designed, synthesized, and characterized. Given the unique four-membered Ir-N-C-N backbone built by the metal center and the ancillary ligand, both phosphors achieve significant improvement for their comprehensive optoelectronic characteristics. Density function theory (DFT) calculations and electrochemical measurements support the genuine pure red phosphorescent emission of fIr1 and dfIr2 based on their clearly distinct electron density distributions of the HOMO/LUMO orbitals compared with other red-emitting Ir(III) derivatives. Both new phosphors show deep-red emission with λmax values in the region of 650-660 nm with high PLQYs and short excited-state lifetimes. The phosphorescent organic light emitting diodes (PhOLEDs) based on fIr1 and dfIr2 realize deep-red EL with the stable CIEx,y coordinates of (0.70, 0.30) and (0.69, 0.31), the peak EQE/PE values of 15.4%/9.3 lm W(-1) and 16.7%/10.4 lm W(-1), respectively, which maintain such high levels as 10.6%/3.5 lm W(-1) and 10.8%/3.6 lm W(-1) at the practical luminance of 1000 cd m(-2). They are the highest EL values reported for the OLEDs with such deep-red CIE coordinates.

  15. High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices

    Science.gov (United States)

    Kim, T. W.; Choo, D. C.; No, Y. S.; Choi, W. K.; Choi, E. H.

    2006-12-01

    Deposition of Al-doped ZnO (AZO) films with various film thicknesses on glass substrates was performed to investigate the feasibility of using AZO films as anode electrodes in organic light-emitting devices (OLEDs). The electrical resistivity of the AZO films with a 180-nm thickness was 4.085 × 10 -2 Ω cm, and the average optical transmittance in the visible range was 80.2%. The surface work function for the AZO films, determined from the secondary electron emission coefficients obtained with a focused ion beam, was as high as 4.62 eV. These results indicate that AZO films grown on glass substrates hold promise for potential applications as anode electrodes in high-efficiency OLEDs.

  16. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    Science.gov (United States)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-07-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A-1, 81.22 lm W-1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m-2 to 10 000 cd m-2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density-voltage (J-V) characteristics of the electron-only devices. In particular, by comparing the J-V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m-2 to 10870 cd m-2, as is beneficial to the lighting application.

  17. Incorporating a hole-transport material into the emissive layer of solid-state light-emitting electrochemical cells to improve device performance.

    Science.gov (United States)

    Huang, Po-Chin; Krucaite, Gintare; Su, Hai-Ching; Grigalevicius, Saulius

    2015-07-14

    Solid-state light-emitting electrochemical cells (LECs) based on ionic transition metal complexes (iTMCs) have several advantages such as high efficiency, low operation voltage and simple device structure. To improve the device efficiency of iTMC-based LECs for practical applications, improving the carrier balance to achieve a centered recombination zone would be an important issue. In this work, incorporating a hole-transport material (HTM) into the emissive layer of iTMC-based LECs is shown to improve device performance. When mixed with an HTM (12%), the LECs based on a Ru complex exhibit 1.9× and 1.5× enhancement in peak light output and peak external quantum efficiency (EQE) as compared to neat-film devices. Furthermore, over 2× enhancement in stabilized EQE can be achieved in LECs mixed with an HTM. It is attributed to that a more centered recombination zone in LECs mixed with an HTM is beneficial in reducing exciton quenching in the recombination zone approaching extended doped layers. Estimating the temporal evolution of the recombination zone in the LECs mixed with an HTM by employing the microcavity effect is demonstrated to confirm the physical origin for improved device performance. These results reveal that incorporating of an HTM in the emissive layer of LECs based on an iTMC is a feasible way to improve carrier balance and thus enhance light output and device efficiency.

  18. New blue-light-emitting ultralong [Cd(L)(TeO3)] (L = polyamine) organic-inorganic hybrid nanofibre bundles: their thermal stability and acidic sensitivity.

    Science.gov (United States)

    Yao, Hong-Bin; Li, Xiao-Bo; Yu, Shu-Hong

    2009-08-03

    A new type of blue-light-emitting ultralong [Cd(L)(TeO(3))] (L = ethylenediamine, diethylenetriamine) nanofibre bundle has been synthesised under reflux in a mixed solvent media. Inorganic Cd(TeO(3)) layers are assumed to exist in the structures and are connected by the organic amine molecules through the coordination between nitrogen atoms and cadmium ions. The composition and formulae of these hybrid materials, based on the proposed structures, have been identified through element analysis (EA), thermal gravity analysis (TGA) and energy dispersive spectra (EDS). The thermal stabilities and optical properties of these nanofibre bundles have been investigated. Thermal decomposition of [Cd(en)(TeO(3))] (en = ethylenediamine) and [Cd(DETA)(TeO(3))] (DETA = diethylenetriamine) at 450 degrees C allowed the formation of a mixture of CdTe and Cd(TeO(3)) phases, and a pure CdTe phase, respectively. In addition, this new kind of hybrid bundle, which demonstrates blue emission, was found to be sensitive to acids, and the emission intensity is strongly dependent on the acidity of the solutions, implying that these hybrid nanofibre bundles could be potentially applied as acid sensors.

  19. Study of the Distribution of Radiative Defects and Reabsorption of the UV in ZnO Nanorods-Organic Hybrid White Light Emitting Diodes (LEDs).

    Science.gov (United States)

    Hussain, Ijaz; Bano, Nargis; Hussain, Sajjad; Soomro, Yousuf; Nur, Omer; Willander, Magnus

    2011-07-08

    In this study, the low temperature aqueous chemical growth (ACG) method was employed to synthesized ZnO nanorods to process-organic hybrid white light emitting diodes (LEDs) on glass substrate. Electroluminescence spectra of the hybrid white LEDs demonstrate the combination of emission bands arising from radiative recombination of the organic and ZnO nanorods (NRs). Depth resolved luminescence was used for probing the nature and spatial distribution of radiative defects, especially to study the re-absorption of ultraviolet (UV) in this hybrid white LEDs structure. At room temperature the cathodoluminescence (CL) spectra intensity of the deep band emission (DBE) is increased with the increase of the electron beam penetration depth due to the increase of defect concentration at the ZnO NRs/Polyfluorene (PFO) interface and probably due to internal absorption of the UV. A strong dependency between the intensity ratio of the UV to the DBE bands and the spatial distribution of the radiative defects in ZnO NRs has been found. The comparison of the CL spectra from the PFO and the ZnO NRs demonstrate that PFO has a very weak violet-blue emission band, which confirms that most of the white emission components originate from the ZnO NRs.

  20. Study of the Distribution of Radiative Defects and Reabsorption of the UV in ZnO Nanorods-Organic Hybrid White Light Emitting Diodes (LEDs

    Directory of Open Access Journals (Sweden)

    Yousuf Soomro

    2011-07-01

    Full Text Available In this study, the low temperature aqueous chemical growth (ACG method was employed to synthesized ZnO nanorods to process-organic hybrid white light emitting diodes (LEDs on glass substrate. Electroluminescence spectra of the hybrid white LEDs demonstrate the combination of emission bands arising from radiative recombination of the organic and ZnO nanorods (NRs. Depth resolved luminescence was used for probing the nature and spatial distribution of radiative defects, especially to study the re-absorption of ultraviolet (UV in this hybrid white LEDs structure. At room temperature the cathodoluminescence (CL spectra intensity of the deep band emission (DBE is increased with the increase of the electron beam penetration depth due to the increase of defect concentration at the ZnO NRs/Polyfluorene (PFO interface and probably due to internal absorption of the UV. A strong dependency between the intensity ratio of the UV to the DBE bands and the spatial distribution of the radiative defects in ZnO NRs has been found. The comparison of the CL spectra from the PFO and the ZnO NRs demonstrate that PFO has a very weak violet-blue emission band, which confirms that most of the white emission components originate from the ZnO NRs.

  1. Very thin ITO/metal mesh hybrid films for a high-performance transparent conductive layer in GaN-based light-emitting diodes

    Science.gov (United States)

    Min, Jung-Hong; Kwak, Hoe-Min; Kim, Kiyoung; Jeong, Woo-Lim; Lee, Dong-Seon

    2017-01-01

    In this paper, we introduce very thin Indium tin oxide (ITO) layers (5, 10, and 15 nm) hybridized with a metal mesh to produce high-performance transparent conductive layers (TCLs) in near-ultraviolet light-emitting diodes (NUV LEDs). Using UV–vis–IR spectrometry, Hall measurement, and atomic force microscopy, we found that 10 nm was the optimal thickness for the very thin ITO layers in terms of outstanding transmittance and sheet resistance values as well as stable contact properties when hybridized with the metal mesh. The proposed layers showed a value of 4.56 Ω/□ for sheet resistance and a value of 89.1% for transmittance. Moreover, the NUV LEDs fabricated with the hybrid TCLs achieved ∼140% enhanced light output power compared to that of 150 nm thick ITO layers. Finally, to verify the practical usage of the TCLs for industrial applications, we packaged the NUV LED chips and obtained improved turn-on voltage (3.48 V) and light output power (∼116%) performance.

  2. Effect of a light-emitting timer device on the blink rate of non-dry eye individuals and dry eye patients.

    Science.gov (United States)

    Miura, Danielle Lumi; Hazarbassanov, Rossen Mihaylov; Yamasato, Camila Karim Nakase; Bandeira e Silva, Francisco; Godinho, Cléber José; Gomes, José Álvaro Pereira

    2013-08-01

    To evaluate blink rate effects by a novel light-emitting diode (LED) timer device (PISC) on non-dry eye (DE) subjects and DE patients during a reading task on liquid crystal display (LCD) screens, in different environmental conditions. This was a case-control study that included 15 DE patients and 15 non-DE subjects as controls. Participants had their blink rates measured while they read an electronic format text. These tasks were performed in four different conditions: with and without a LED timer device in two visits, and with and without air conditioning. All participants completed the Ocular Surface Disease Index and were examined by best spectacle-corrected visual acuity exam, biomicroscopy, Schirmer test 1, fluorescein staining and break-up time and lissamine green staining (Oxford scale grading). Outcomes between reading tasks conditions were compared independently for each group and blink rate frequency was higher in tasks with LED timer device, with and without air conditioning, for the DE group (ptimer device increased blink frequency for DE and control groups. Further studies need to be carried out in order to evaluate long-term effects of this new device, as well as its assessment with different reading scenarios.

  3. An integrated enzyme-linked immunosorbent assay system with an organic light-emitting diode and a charge-coupled device for fluorescence detection.

    Science.gov (United States)

    Nakajima, Hizuru; Okuma, Yukiko; Morioka, Kazuhiro; Miyake, Mayo; Hemmi, Akihide; Tobita, Tatsuya; Yahiro, Masayuki; Yokoyama, Daisuke; Adachi, Chihaya; Soh, Nobuaki; Nakano, Koji; Xue, Shuhua; Zeng, Hulie; Uchiyama, Katsumi; Imato, Toshihiko

    2011-10-01

    A fluorescence detection system for a microfluidic device using an organic light-emitting diode (OLED) as the excitation light source and a charge-coupled device (CCD) as the photo detector was developed. The OLED was fabricated on a glass plate by photolithography and a vacuum deposition technique. The OLED produced a green luminescence with a peak emission at 512 nm and a half bandwidth of 55 nm. The maximum external quantum efficiency of the OLED was 7.2%. The emission intensity of the OLED at 10 mA/cm(2) was 13 μW (1.7 mW/cm(2)). The fluorescence detection system consisted of the OLED device, two band-pass filters, a five microchannel poly(dimethylsiloxane) (PDMS) microfluidic device and a linear CCD. The fluorescence detection system was successfully used in a flow-based enzyme-linked immunosorbent assay on a PDMS microfluidic device for the rapid determination of immunoglobulin A (IgA), a marker for human stress. The detection limit (S/N=3) for IgA was 16.5 ng/mL, and the sensitivity was sufficient for evaluating stress. Compared with the conventional 96-well microtiter plate assay, the analysis time and the amounts of reagent and sample solutions could all be reduced.

  4. Nanofabrication of Hybrid Optoelectronic Devices

    Science.gov (United States)

    Dibos, Alan Michael

    The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can yield a nanoscale solar cell, and modeling of optical absorption and exciton diffusion in this device can provide insight into the efficiency of charge separation. Second, we use an on-chip nanowire light emitting diode to pump a colloidal quantum dot coupled to a silver waveguide. The resulting device is an electro-optic single plasmon source. Finally, we transfer diamond waveguides onto near-field avalanche photodiodes fabricated from GaAs. Embedded in the diamond waveguides are nitrogen vacancy color centers, and the mapping of emission from these single-photon sources is demonstrated using our on-chip detectors, eliminating the need for external photodetectors on an optical table. These studies show the promise of hybrid optoelectronic devices at the nanoscale with applications in alternative energy, optical communication, and quantum optics.

  5. Charge generation layers for all-solution processed organic tandem light emitting diodes with regular device architecture

    Science.gov (United States)

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Colsmann, Alexander

    2015-10-01

    We present multi-photon OLEDs where enhanced light emission was achieved by stacking two OLEDs utilizing a regular device architecture (top cathode) and an intermediate charge carrier generation layer (CGL) for monolithic device interconnection. With respect to future printing processes for organic optoelectronic devices, all functional layers were deposited from solution. The CGL comprises a low-work function zinc oxide layer that was applied from solution under ambient conditions and at moderate processing temperatures and a high-work function interlayer that was realized from various solution processable precursor-based metal oxides, like molybdenum-, vanadium- and tungsten-oxide. Since every injected electron-hole pair generates two photons, the luminance and the current efficiency of the tandem OLED at a given device current are doubled while the power efficiency remains constant. At a given luminance, the lower operating current in the tandem device reduces electrical stress and improves the device life-time. ToF-SIMS, TEM/FIB and EDX analyses provided evidence of a distinct layer sequence without intermixing upon solution deposition.

  6. Molecularly Engineered Organic-Inorganic Hybrid Perovskite with Multiple Quantum Well Structure for Multicolored Light-Emitting Diodes.

    Science.gov (United States)

    Hu, Hongwei; Salim, Teddy; Chen, Bingbing; Lam, Yeng Ming

    2016-09-16

    Organic-inorganic hybrid perovskites have the potential to be used as a new class of emitters with tunable emission, high color purity and good ease of fabrication. Recent studies have so far been focused on three-dimensional (3D) perovskites, such as CH3NH3PbBr3 and CH3NH3PbI3 for green and infrared emission. Here, we explore a new series of hybrid perovskite emitters with a general formula of (C4H9NH3)2(CH3NH3)n-1PbnI3n+1 (where n = 1, 2, 3), which possesses a multiple quantum well structure. The quantum well thickness of these materials is adjustable through simple molecular engineering which results in a continuously tunable bandgap and emission spectra. Deep saturated red emission was obtained with a peak external quantum efficiency of 2.29% and a maximum luminance of 214 cd/m(2). Green and blue LEDs were also demonstrated through halogen substitutions in these hybrid perovskites. We expect these results to open up the way towards high performance perovskite LEDs through molecular-structure engineering of these perovskite emitters.

  7. Molecularly Engineered Organic-Inorganic Hybrid Perovskite with Multiple Quantum Well Structure for Multicolored Light-Emitting Diodes

    Science.gov (United States)

    Hu, Hongwei; Salim, Teddy; Chen, Bingbing; Lam, Yeng Ming

    2016-01-01

    Organic-inorganic hybrid perovskites have the potential to be used as a new class of emitters with tunable emission, high color purity and good ease of fabrication. Recent studies have so far been focused on three-dimensional (3D) perovskites, such as CH3NH3PbBr3 and CH3NH3PbI3 for green and infrared emission. Here, we explore a new series of hybrid perovskite emitters with a general formula of (C4H9NH3)2(CH3NH3)n−1PbnI3n+1 (where n = 1, 2, 3), which possesses a multiple quantum well structure. The quantum well thickness of these materials is adjustable through simple molecular engineering which results in a continuously tunable bandgap and emission spectra. Deep saturated red emission was obtained with a peak external quantum efficiency of 2.29% and a maximum luminance of 214 cd/m2. Green and blue LEDs were also demonstrated through halogen substitutions in these hybrid perovskites. We expect these results to open up the way towards high performance perovskite LEDs through molecular-structure engineering of these perovskite emitters. PMID:27633084

  8. Enhanced Optoelectronic Properties of PFO/Fluorol 7GA Hybrid Light Emitting Diodes via Additions of TiO2 Nanoparticles

    Directory of Open Access Journals (Sweden)

    Bandar Ali Al-Asbahi

    2016-09-01

    Full Text Available The effect of TiO2 nanoparticle (NP content on the improvement of poly(9,9′-di-n-octylfluorenyl-2,7-diyl (PFO/Fluorol 7GA organic light emitting diode (OLED performance is demonstrated here. The PFO/Fluorol 7GA blend with specific ratios of TiO2 NPs was prepared via a solution blending method before being spin-coated onto an indium tin oxide (ITO substrate to act as an emissive layer in OLEDs. A thin aluminum layer as top electrode was deposited onto the emissive layer using the electron beam chamber. Improvement electron injection from the cathode was achieved upon incorporation of TiO2 NPs into the PFO/Fluorol 7GA blend, thus producing devices with intense luminance and lower turn-on voltage. The ITO/(PFO/Fluorol 7GA/TiO2/Al OLED device exhibited maximum electroluminescence intensity and luminance at 25 wt % of TiO2 NPs, while maximum luminance efficiency was achieved with 15 wt % TiO2 NP content. In addition, this work proved that the performance of the devices was strongly affected by the surface morphology, which in turn depended on the TiO2 NP content.

  9. Highly efficient and concentration-insensitive organic light-emitting devices based on self-quenching-resistant orange–red iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Yige; Wang, Xu [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-11-15

    Orange–red phosphorescent organic light-emitting devices (PHOLEDs) with high efficiency and concentration insensitivity based on a novel iridium complex, bis[2-(biphenyl-4-yl)benzothiazole-N,C{sup 2}′]iridium(III) (acetylacetonate) [(4Phbt){sub 2}Ir(acac)], were fabricated. With the heavily doped emissive layer (EML) of 4,4′-N,N′-dicarbazolylbiphenyl (CBP): (4Phbt){sub 2}Ir(acac) in a wide and easily controlled dopant concentration range from 12 wt% to 24 wt%, a maximum power efficiency of 29 lm/W and an external quantum efficiency of >16% of the PHOLEDs were obtained, implying the insensitivity of electroluminescence (EL) properties to doping concentration. Meanwhile, a maximum power efficiency of 5.0 lm/W was achieved from a non-doped device with neat (4Phbt){sub 2}Ir(acac) as the EML, indicating a superior property of self-quenching resistance. The mechanism of direct exciton formation, in which exciton-formation regions are distributed throughout the EML, is responsible for the significant alleviation of triplet–triplet annihilation and superior EL performance. - Highlights: • Highly efficient and concentration-insensitive PHOLEDs were obtained. • The high efficiency of non-doped PHOLEDs indicated a quenching-resistant property. • The independence of EL spectra on doping concentration was observed. • The heavily doped devices were dominated by mechanism of direct exciton formation.

  10. Influence of PVK:NPB hole transporting layer on the characteristics of organic light-emitting devices

    Institute of Scientific and Technical Information of China (English)

    WEN Wen; YU Jun-sheng; LI Lu; MA Tao; TANG Xiao-qing; JIANG Ya-dong

    2008-01-01

    A doping system consisting of NPB and PVK is employed as a composite hole transporting layer (CHTL).By adjusting the component ratio of the doping system,a series of devices with different concentration proportion of PVK:NPB are constructed.The result shows that doping concentration of NPB enhances the competence of hole transporting ability,and modifies the recombination region of charge as well as affects the surface morphology of doped film.Optimum device with a maximum brightness of 7852 cd/m2 and a power efficiency of 1.75 1m/W has been obtained by choosing a concentration

  11. White emitting polyfluorene functionalized with azide hybridized on near-UV light emitting diode for high color rendering index.

    Science.gov (United States)

    Huyal, Ilkem Ozge; Ozel, Tuncay; Koldemir, Unsal; Nizamoglu, Sedat; Tuncel, Donus; Demir, Hilmi Volkan

    2008-01-21

    We develop and demonstrate high-quality white light generation that relies on the use of a single-type simple conjugated polymer of polyfluorene functionalized with azide groups (PFA) integrated on a near-UV LED platform. The high-quality white emission from the polyfluorene is achieved by using the azide functionalization to facilitate cross-linking intentionally when cast into solid-state form. Hybridized on n-UV InGaN/GaN LED at 378 nm, the PFA emitters collectively generate a very broad down-converting photoluminescence at longer wavelengths across the entirety of the visible spectrum, yielding high color rendering indices up to 91.

  12. Simultaneously enhanced device efficiency, stabilized chromaticity of organic light emitting diodes with lambertian emission characteristic by random convex lenses

    Science.gov (United States)

    Lee, Keunsoo; Lee, Jonghee; Kim, Eunhye; Lee, Jeong-Ik; Cho, Doo-Hee; Lim, Jong Tae; Joo, Chul Woong; Kim, Joo Yeon; Yoo, Seunghyup; Ju, Byeong-Kwon; Moon, Jaehyun

    2016-02-01

    An optical functional film applicable to various lighting devices is demonstrated in this study. The phase separation of two immiscible polymers in a common solvent was used to fabricate the film. In this paper, a self-organized lens-like structure is realized in this manner with optical OLED functional film. For an OLED, there are a few optical drawbacks, including light confinement or viewing angle distortion. By applying the optical film to an OLED, the angular spectra distortion resulting from the designed organic stack which produced the highest efficiency was successfully stabilized, simultaneously enhancing the efficiency of the OLED. We prove the effect of the film on the efficiency of OLEDs through an optical simulation. With the capability to overcome the main drawbacks of OLEDs, we contend that the proposed film can be applied to various lighting devices.

  13. Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications

    Science.gov (United States)

    Mintairov, S. A.; Kalyuzhnyy, N. A.; Lantratov, V. M.; Maximov, M. V.; Nadtochiy, A. M.; Rouvimov, Sergei; Zhukov, A. E.

    2015-09-01

    Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm-2 for the terrestrial spectrum and by 4.1 mA cm-2 for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm-1 and 37 A cm-2 per layer, respectively.

  14. Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.

    Science.gov (United States)

    Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E

    2015-09-25

    Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.

  15. Phosphorescent Nanocluster Light-Emitting Diodes.

    Science.gov (United States)

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    Devices utilizing an entirely new class of earth abundant, inexpensive phosphorescent emitters based on metal-halide nanoclusters are reported. Light-emitting diodes with tunable performance are demonstrated by varying cation substitution to these nanoclusters. Theoretical calculations provide insight about the nature of the phosphorescent emitting states, which involves a strong pseudo-Jahn-Teller distortion.

  16. Efficient top-emitting white organic light emitting device with an extremely stable chromaticity and viewing-angle

    Institute of Scientific and Technical Information of China (English)

    Shao Ming; Guo Xu; Chen Shu-Fen; Fan Qu-Li; Huang Wei

    2012-01-01

    In this paper,we report on the fabrication of a top-emitting electrophosphorescent p-i- n white organic lightemitting diode on the basis of a low-reflectivity Sm/Ag semi-transparent cathode together with a thickness-optimized ZnS out-coupling layer.With a 24-nm out-coupling layer,the reflectivity of the cathode is reduced to 8% at 492 nm and the mean reflectivity is 24% in the visible area. By introducing an efficient electron blocking layer tris(1-phenylpyrazolato,N,C2')iridium(III) (Ir(ppz)3) to confine the exciton recombination area,the current efficiency and the colour stability of the device are effectively improved.A white emission with the Ir(ppz)3 layer exhibits a maximum current efficiency of 9.8 cd/A at 8 V,and the Commission Internationale de L'Eclairage (CIE) chromaticity coordinates are almost constant during a large voltage change of 6 V-11 V.There is almost no viewing angular dependence in the spectrum when the viewing angle is no more than 45°,with a CIEx,y coordinate variation of only (±0.0025,±0.0008).Even at a large viewing angle (75°),the CIEx,y coordinate change is as small as (±0.0087,±0.0013).

  17. Green light emitting nanostructures of Tb3+ doped LaOF prepared via ultrasound route applicable in display devices

    Science.gov (United States)

    Suresh, C.; Nagabhushana, H.; Basavaraj, R. B.; Prasad, B. Daruka

    2017-05-01

    For the first time Tb3+ (1-5 mol %) doped LaOF nanophosphors using Aloe vera (AV) leaves extract as bio-surfactant were synthesized by facile ultrasound supported sonochemical route at relatively high temperature (700°C) and short duration of 3h. The powder X-ray diffraction (PXRD) profiles of LaOF nanophosphors showed tetragonal structure. The morphological features of LaOF with effect of Sonication time and concentration of bio-surfactant were studied by scanning electron microscope (SEM). The particle size were estimated from transmission electron microscope (TEM) image was found to be in the range of 20-30 nm. The characteristic photoluminescence emission peaks at 487, 541, 586 and 620 nm in green region corresponding to 5D4→7Fj (j=6, 5, 4, 3) transitions of Tb3+ were observed. The LaOF: Tb3+ nanophosphors exhibit green luminescence with better chromaticity coordinates, colour purity and higher intensity under low-voltage electron beam excitation were observed by Commission International De I'Eclairage (CIE) along with colour correlated temperature (CCT). All results indicate that these obtained nanophosphors have potential applications in field emission display device.

  18. Light Emitting Diodes (LEDs)

    Science.gov (United States)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  19. Synthesis and characterization of a novel symmetrical sulfone-substituted polyphenylene vinylene (SO2EH-PPV) for applications in light emitting devices.

    Science.gov (United States)

    Hubijar, Emir; Papadimitratos, Alexios; Lee, Doyun; Zakhidov, Anvar; Ferraris, John P

    2013-04-25

    A novel symmetrical alkylsulfonyl-substituted poly(phenylenevinylene) derivative, poly [2,5-bis-(2'-ethylhexylsulfonyl)-1,4-phenylene)vinylene] (SO2EH-PPV), was synthesized via palladium-catalyzed Stille coupling, and its electronic and optical properties were investigated. The novel PPV derivative was characterized by NMR, UV-visible absorption, photoluminescence, gel permeation chromatography, infrared spectroscopy, and cyclic voltammetry (CV). The polymer with Mw of 27,800 and a polydispersity index of 2.6 is readily soluble in common organic solvents, such as THF, chloroform, and toluene. The fluorescence quantum yield of the polymer, determined against rhodamine 6G in dilute aqueous solutions, was 0.95. The HOMO and LUMO levels of SO2EH-PPV were calculated to be -6.0 and -3.61 eV, respectively. The results obtained by CV suggest that SO2EH-PPV is a strong electron acceptor polymer. Single layer stable polymer light-emitting diode devices with the configuration of (ITO/PEDOT:PSS/SO2EH-PPV polymer/Al) were fabricated exhibiting a green light emission.

  20. Pulsed Nd:YAG laser deposition of indium tin oxide thin films in different gases and organic light emitting device applications

    Energy Technology Data Exchange (ETDEWEB)

    Yong, T.Y. [Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia); Tou, T.Y. [Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia)], E-mail: tytou@mmu.edu.my; Yow, H.K. [Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia); Safran, G. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, 1121 Konkoly-Thege ut 29-33, Budapest XII (Hungary)

    2008-04-30

    The microstructures, electrical and optical properties of indium-doped tin oxide (ITO) films, deposited on glass substrates in different background gases by a pulsed Nd:YAG laser, were characterized. The optimal pressure for obtaining the lowest resistivity in ITO thin film is inversely proportional to the molecular weight of the background gases, namely the argon (Ar), oxygen (O{sub 2}), nitrogen (N{sub 2}) and helium (He). While substrate heating to 250 deg. C decreased the ITO resistivity to < 4 x 10{sup -4} {omega} cm, obtaining the optical transmittance of higher than 90% depended mainly on the background gas pressure for O{sub 2} and Ar. Obtaining the lowest ITO resistivity, however, did not beget a high optical transmittance for ITO deposition in N{sub 2} and He. Scanning electron microscope pictures show distinct differences in microstructures due to the background gas: nanostructures when using Ar and N{sub 2} but polycrystalline for using O{sub 2} and He. The ITO surface roughness varied with the deposition distance. The effects on the molecularly doped, single-layer organic light emitting device (OLED) operation and performance were also investigated. Only ITO thin films prepared in O{sub 2} and Ar are suitable for the fabrication OLED with performance comparable to that fabricated on the commercially available, magnetron-sputtered ITO.

  1. Structural refinement, band-gap analysis and optical properties of GdAlO3 nanophosphors influenced by Dy3+ ion concentrations for white light emitting device applications

    Science.gov (United States)

    Jisha, P. K.; Naik, Ramachandra; Prashantha, S. C.; Nagaswarupa, H. P.; Nagabhushana, H.; Basavaraj, R. B.; Sharma, S. C.; Prasad, Daruka

    2016-04-01

    Nanosized GdAlO3 phosphors activated with Dy3+ were prepared by a combustion method. Synthesized phosphors were calcined at 1000 °C for 3 h in order to achieve crystallinity. Powder x-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM) analysis was used to characterize the prepared product. The orthorhombic phase was observed in the XRD pattern. The particle size of the samples was calculated as around 25 nm. The SEM images show an irregular shape of the prepared nanophosphor. Functional groups of the phosphors were examined by Fourier transform infrared (FTIR) spectroscopy. Photoluminescence (PL) properties of Dy3+ doped GdAlO3 for near-ultraviolet excitation (352 nm) were studied in order to investigate the possibility of its use in white light emitting device applications. Judd-Ofelt intensity parameters, radiative transition rate (A T) and radiative lifetimes (τ rad) were evaluated from the emission spectrum by adopting a standard procedure. The Commission International de l’Eclairage (CIE) color coordinates and correlated color temperature (CCT) are studied for the optimized phosphor. It is found that the color coordinates of Dy3+ doped GdAlO3 powders fall in the white region of the CIE diagram, and the average CCT value was found to be about 6276 K. Therefore, the present phosphor is highly useful for display applications.

  2. Micro-structure Engineering of InGaN/GaN Quantum Wells for High Brightness Light Emitting Devices

    KAUST Repository

    Shen, Chao

    2013-05-01

    L > 3 μm in the array configuration would allow the building of practical devices. Overall, this work demonstrated a novel top-down approach to manufacture large effective-area, high brightness emitters for solid-state lighting applications.

  3. Studies on high power ultrasonic microembossing and organic light emitting diodes (OLEDs) for the creation of lab-on-CD devices for sensor related applications

    Science.gov (United States)

    Vengasandra, Srikanth G.

    This study demonstrates the application of High Power Ultrasonic Microembossing Technology (HPUMT) in producing microfeatures on polymer substrates. The work reviews a novel method of obtaining flash free and precise microfeatures by manipulating the material density through microcellular foaming. The microfeatures created on the polymer substrates were further characterized by analyzing the feature depth with respect to the critical ultrasonic embossing operating parameters such as embossing heating times (s), embossing amplitude (microm) at a constant embossing trigger force (N). An experiment design was constructed and performed to characterize the parameters on foamed and unfoamed (or regular) versions of polystyrene (PS) and polypropylene (PP) sample materials. Results indicated feature depth was proportional to heating times, amplitude and force. It was also seen the maximum depth was achieved in the shortest cycle times with higher amplitudes and forces of operation. HPUMT was further studied to create functional network of microchannels functioned as reservoirs, reaction chamber and burst or gate valves to form a centrifugal biosensing platform that is also referred to as a lab-on-CD or a bio-CD device. The surface energy of the polymer substrates was increased to enable fluid flow by using a surfactant based organic coating to facilitate hydrophilicity. Using an organic light emitting diode (OLEDs) as an electroluminescence source provided luminescence decay results in good agreement with stern-volmer relationship. The functionality of the OLED-coupled lab-on-CD device was further tested in measuring unknown concentrations of a particular analyte in corn slurry sample which contained numerous contaminants. Combinatorial multianalyte sensing was also made possible on a single bio-CD using a four photodetector (PD) quad preamp disk sensor.

  4. A controlled trial of the Litebook light-emitting diode (LED light therapy device for treatment of Seasonal Affective Disorder (SAD

    Directory of Open Access Journals (Sweden)

    Telner John

    2007-08-01

    Full Text Available Abstract Background Recent research has emphasized that the human circadian rhythm system is differentially sensitive to short wavelength light. Light treatment devices using efficient light-emitting diodes (LEDs whose output is relatively concentrated in short wavelengths may enable a more convenient effective therapy for Seasonal Affective Disorder (SAD. Methods The efficacy of a LED light therapy device in the treatment of SAD was tested in a randomized, double-blind, placebo-controlled, multi-center trial. Participants aged 18 to 65 with SAD (DSM-IV major depression with seasonal pattern were seen at Baseline and Randomization visits separated by 1 week, and after 1, 2, 3 and 4 weeks of treatment. Hamilton Depression Rating Scale scores (SIGH-SAD were obtained at each visit. Participants with SIGH-SAD of 20 or greater at Baseline and Randomization visits were randomized to active or control treatment: exposure to the Litebook LED treatment device (The Litebook Company Ltd., Alberta, Canada which delivers 1,350 lux white light (with spectral emission peaks at 464 nm and 564 nm at a distance of 20 inches or to an inactivated negative ion generator at a distance of 20 inches, for 30 minutes a day upon awakening and prior to 8 A.M. Results Of the 26 participants randomized, 23 completed the trial. Mean group SIGH-SAD scores did not differ significantly at randomization. At trial end, the proportions of participants in remission (SIGH-SAD less than 9 were significantly greater (Fisher's exact test, and SIGH-SAD scores, as percent individual score at randomization, were significantly lower (t-test, with active treatment than with control, both in an intent-to-treat analysis and an observed cases analysis. A longitudinal repeated measures ANOVA analysis of SIGH-SAD scores also indicated a significant interaction of time and treatment, showing superiority of the Litebook over the placebo condition. Conclusion The results of this pilot study support

  5. Identification of inorganic improvised explosive devices by analysis of postblast residues using portable capillary electrophoresis instrumentation and indirect photometric detection with a light-emitting diode.

    Science.gov (United States)

    Hutchinson, Joseph P; Evenhuis, Christopher J; Johns, Cameron; Kazarian, Artaches A; Breadmore, Michael C; Macka, Miroslav; Hilder, Emily F; Guijt, Rosanne M; Dicinoski, Greg W; Haddad, Paul R

    2007-09-15

    A commercial portable capillary electrophoresis (CE) instrument has been used to separate inorganic anions and cations found in postblast residues from improvised explosive devices (IEDs) of the type used frequently in terrorism attacks. The purpose of this analysis was to identify the type of explosive used. The CE instrument was modified for use with an in-house miniaturized light-emitting diode (LED) detector to enable sensitive indirect photometric detection to be employed for the detection of 15 anions (acetate, benzoate, carbonate, chlorate, chloride, chlorite, cyanate, fluoride, nitrate, nitrite, perchlorate, phosphate, sulfate, thiocyanate, thiosulfate) and 12 cations (ammonium, monomethylammonium, ethylammonium, potassium, sodium, barium, strontium, magnesium, manganese, calcium, zinc, lead) as the target analytes. These ions are known to be present in postblast residues from inorganic IEDs constructed from ammonium nitrate/fuel oil mixtures, black powder, and chlorate/perchlorate/sugar mixtures. For the analysis of cations, a blue LED (470 nm) was used in conjunction with the highly absorbing cationic dye, chrysoidine (absorption maximum at 453 nm). A nonaqueous background electrolyte comprising 10 mM chrysoidine in methanol was found to give greatly improved baseline stability in comparison to aqueous electrolytes due to the increased solubility of chrysoidine and its decreased adsorption onto the capillary wall. Glacial acetic acid (0.7% v/v) was added to ensure chrysoidine was protonated and to enhance separation selectivity by means of complexation with transition metal ions. The 12 target cations were separated in less than 9.5 min with detection limits of 0.11-2.30 mg/L (calculated at a signal-to-noise ratio of 3). The anions separation system utilized a UV LED (370 nm) in conjunction with an aqueous chromate electrolyte (absorption maximum at 371 nm) consisting of 10 mM chromium(VI) oxide and 10 mM sodium chromate, buffered with 40 mM tris

  6. Sky-Blue Organic Light Emitting Diode with 37% External Quantum Efficiency Using Thermally Activated Delayed Fluorescence from Spiroacridine-Triazine Hybrid.

    Science.gov (United States)

    Lin, Ting-An; Chatterjee, Tanmay; Tsai, Wei-Lung; Lee, Wei-Kai; Wu, Meng-Jung; Jiao, Min; Pan, Kuan-Chung; Yi, Chih-Lung; Chung, Chin-Lung; Wong, Ken-Tsung; Wu, Chung-Chih

    2016-08-01

    Extremely efficient sky-blue organic electroluminescence with external quantum efficiency of ≈37% is achieved in a conventional planar device structure, using a highly efficient thermally activated delayed fluorescence emitter based on the spiroacridine-triazine hybrid and simultaneously possessing nearly unitary (100%) photoluminescence quantum yield, excellent thermal stability, and strongly horizontally oriented emitting dipoles (with a horizontal dipole ratio of 83%).

  7. Design and geometry of hybrid white light-emitted diodes for efficient energy transfer from the quantum well to the nanocrystals

    DEFF Research Database (Denmark)

    Kopylov, Oleksii; Huck, Alexander; Shirazi, Roza

    2013-01-01

    We demonstrate light color conversion in patterned InGaN light-emitting diodes (LEDs), which is enhanced via nonradiative exciton resonant energy transfer (RET) from the electrically driven diode to colloidal semiconductor nanocrystals (NCs). Patterning of the diode is essential for the coupling...... between a quantum well (QW) and NCs, because the distance between the QW and NCs is a main and very critical factor of RET. Moreover, a proper design of the pattern can enhance light extraction....

  8. Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Bie, Ya-Qing; Liao, Zhi-Min; Wang, Peng-Wei; Zhou, Yang-Bo; Han, Xiao-Bing; Ye, Yu; Zhao, Qing; Wu, Xiao-Song; Dai, Lun; Xu, Jun; Sang, Li-Wen; Deng, Jun-Jing; Laurent, K.; Yu, Da-Peng [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Leprince-Wang, Y. [Laboratoire de Physique des Materiaux Divises et Interfaces (LPMDI), CNRS-UMR 8108, Universite Paris-Est., Marne la Vallee Cedex 2, 77454, (France)

    2010-10-08

    We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

    Science.gov (United States)

    Yao, Yung-Chi; Yang, Zu-Po; Hwang, Jung-Min; Chuang, Yi-Lun; Lin, Chia-Ching; Haung, Jing-Yu; Chou, Chun-Yang; Sheu, Jinn-Kong; Tsai, Meng-Tsan; Lee, Ya-Ju

    2016-02-01

    ZnO nanorods (NRs) and Ag nanoparticles (NPs) are known to enhance the luminescence of light-emitting diodes (LEDs) through the high directionality of waveguide mode transmission and efficient energy transfer of localized surface plasmon (LSP) resonances, respectively. In this work, we have demonstrated Ag NP-incorporated n-ZnO NRs/p-GaN heterojunctions by facilely hydrothermally growing ZnO NRs on Ag NP-covered GaN, in which the Ag NPs were introduced and randomly distributed on the p-GaN surface to excite the LSP resonances. Compared with the reference LED, the light-output power of the near-band-edge (NBE) emission (ZnO, λ = 380 nm) of our hybridized structure is increased almost 1.5-2 times and can be further modified in a controlled manner by varying the surface morphology of the surrounding medium of the Ag NPs. The improved light-output power is mainly attributed to the LSP resonance between the NBE emission of ZnO NRs and LSPs in Ag NPs. We also observed different behaviors in the electroluminescence (EL) spectra as the injection current increases for the treatment and reference LEDs. This observation might be attributed to the modification of the energy band diagram for introducing Ag NPs at the interface between n-ZnO NRs and p-GaN. Our results pave the way for developing advanced nanostructured LED devices with high luminescence efficiency in the UV emission regime.ZnO nanorods (NRs) and Ag nanoparticles (NPs) are known to enhance the luminescence of light-emitting diodes (LEDs) through the high directionality of waveguide mode transmission and efficient energy transfer of localized surface plasmon (LSP) resonances, respectively. In this work, we have demonstrated Ag NP-incorporated n-ZnO NRs/p-GaN heterojunctions by facilely hydrothermally growing ZnO NRs on Ag NP-covered GaN, in which the Ag NPs were introduced and randomly distributed on the p-GaN surface to excite the LSP resonances. Compared with the reference LED, the light-output power of the

  10. Bipolar Host Materials for Organic Light-Emitting Diodes.

    Science.gov (United States)

    Yook, Kyoung Soo; Lee, Jun Yeob

    2016-02-01

    It is important to balance holes and electrons in the emitting layer of organic light-emitting diodes to maximize recombination efficiency and the accompanying external quantum efficiency. Therefore, the host materials of the emitting layer should transport both holes and electrons for the charge balance. From this perspective, bipolar hosts have been popular as the host materials of thermally activated delayed fluorescent devices and phosphorescent organic light-emitting diodes. In this review, we have summarized recent developments of bipolar hosts and suggested perspectives of host materials for organic light-emitting diodes.

  11. Chemically Addressable Perovskite Nanocrystals for Light-Emitting Applications

    KAUST Repository

    Sun, Haizhu

    2017-07-10

    Whereas organic–inorganic hybrid perovskite nanocrystals (PNCs) have remarkable potential in the development of optoelectronic materials, their relatively poor chemical and colloidal stability undermines their performance in optoelectronic devices. Herein, this issue is addressed by passivating PNCs with a class of chemically addressable ligands. The robust ligands effectively protect the PNC surfaces, enhance PNC solution processability, and can be chemically addressed by thermally induced crosslinking or radical-induced polymerization. This thin polymer shield further enhances the photoluminescence quantum yields by removing surface trap states. Crosslinked methylammonium lead bromide (MAPbBr3) PNCs are applied as active materials to build light-emitting diodes that have low turn-on voltages and achieve a record luminance of over 7000 cd m−2, around threefold better than previous reported MA-based PNC devices. These results indicate the great potential of this ligand passivation approach for long lifespan, highly efficient PNC light emitters.

  12. Quantificaion of ion diffusion in gallium arsenide-based spintronic Light-Emitting Diode devices using time-of-flight secondary ion mass spectrometry

    Science.gov (United States)

    Cogswell, Jeffrey Ryan

    Depth profiling using Secondary Ion Mass Spectrometry (SIMS) is a direct method to measure diffusion of atomic or molecular species that have migrated distances of nanometers/micrometers in a specific material. For this research, the diffusion of Mn, sequentially Ga ions, in Gallium Arsenide (GaAs)-based spin Light Emitting Diode (LED) devices is studied by quantitative Time-of-Flight (ToF) SIMS. The goal is to prove conclusively the driving force and mechanism behind Mn diffusion in GaAs by quantifying the diffusion of these ions in each device. Previous work has identified two competing processes for the movement of Mn in GaAs: diffusion and phase separation. The process is dependent on the temperature the sample is exposed to, either by post-annealing, or during the molecular beam epitaxy (MBE) growth process. The hypothesis is that Manganese Arsenide (MnAs) is thermodynamically more stable than randomly distributed Mn ions in GaAs, and that by annealing at a certain temperature, a pure MnAs layer can be produced from a GaMnAs layer in a working spin LED device. Secondly, the spin efficiencies will be measured and the difference will be related to the formation of a pure MnAs layer. The first chapter of this dissertation discusses the history of spintronic devices, including details on the established methods for characterization, the importance for potential application to the semiconductor industry, and the requirements for the full implementation of spintronic devices in modern-day computers. MnAs and GaMnAs devices are studied, their preparation and properties are described, and the study's experimental design is covered in the latter part of Chapter 1. Chapter 2 includes a review of diffusion in semiconductors, including the types of diffusion, mechanisms they follow, and the different established experimental methods for studying diffusion. The later sections include summaries of Mn diffusion and previous studies investigating Mn diffusion in different

  13. Highly luminescent colloidal CdS quantum dots with efficient near-infrared electroluminescence in light-emitting diodes

    OpenAIRE

    Bansal, Ashu Kumar; Antolini, F.; Zhang, Shuyue; Stroea, L.; Orlotani, L; Lanzi, M; Serra, E; Allard, S; Scherf, U.; Samuel, Ifor David William

    2016-01-01

    We acknowledge financial support from FP7 project “Laser Induced Synthesis of Polymeric Nanocomposite Materials and Development of Micro-Patterned Hybrid Light Emitting Diodes (LED) and Transistors (LET)”-LAMP (Project G.A.247928). A.K.B. and I.D.W.S. also acknowledge financial support from EPSRC Programme “Challenging the Limits of Photonics: Structured Light” Grant EP/J01771X/1. Quantum dots are of growing interest as emissive materials in light emitting devices. Here first we report the fo...

  14. Experimental investigations into the physics of light emitting conjugated polymers

    CERN Document Server

    Whitelegg, S A

    2001-01-01

    chloroprecursor MEH-PPV in-situ of ITO results in a reaction of the polymer with ITO, which significantly shift the emission to high energies. Electroabsorption spectroscopy is used to probe the internal electric fields within operating polymer light emitting devices. When a PPV based LED in an oxygen/water atmosphere, degradation of the device occurs whereby an electric field develops, which opposes the applied electric field. This opposing electric field subsequently decays when the device is turned to its off state. Operating lifetimes and emission efficiencies of polymer light emitting devices are now approaching values suitable for the manufacture and sale of polymer light emitting based products. However, degradation and device performance still continues to be of chief concern and in order for these to be improved the underlying physical processes have to be identified. This thesis aims to identify some of these processes. An investigation in to the optical absorption and emission properties of insolub...

  15. Enhancement of the Color Rendering Index of White Organic Light-Emitting Devices Based on a Blue and Red Emitting Layer with a Y3Al5O12:Ce3+ Green Phosphor Color-Conversion Layer.

    Science.gov (United States)

    Jang, J S; Lee, K S; Lee, E J; Kwon, M S; Kim, T W

    2015-01-01

    White organic light-emitting devices (WOLEDs) were fabricated utilizing blue and red emitting organic light-emitting devices and a color conversion layer (CCL) made of yttrium aluminum garnet (YAG:Ce3+) phosphors embedded into polymethylmethacrylate. The good color balance for the color conversion of the WOLEDs was achieved utilizing 20-nm blue and 10-nm red OLEDs. The electroluminescence spectrum for the fabricated device showed a white color consisting of the blue color from the 4,4-bis(2,2-diphenylethen-1-yl)bipheny layer, the red color from the tris-(8-hydroxyquinolinato) aluminum: 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran layer, and the green color from the YAG:Ce3+ phosphor. The Commission Internationale de l'Eclairage coordinates of the WOLEDs slightly shifted from (0.25, 0.23) of the blue and red emission OLEDs without phosphors to (0.34, 0.35) of the OLEDs with green phosphors, indicative of the pure white color. WOLEDs with a CCL exhibited three wavelength white emissions with a color rendering index of 86.

  16. SEMICONDUCTOR DEVICES Theoretical analysis of enhanced light output from a GaN light emitting diode with an embedded photonic crystal

    Science.gov (United States)

    Feng, Wen; Deming, Liu; Lirong, Huang

    2010-10-01

    The enhancement of the light output of an embedded photonic crystal light emitting diode is investigated based on the finite-difference time-domain modeling. The embedded photonic crystal (PC) lattice type, multi-layer embedded PC, distance between the multiple quantum well and the embedded PC are studied. It is found that the embedded one dimensional PC can act as well as embedded two dimensional PCs. The emitted light flux in the up direction can be increased by a new kind of multi-layer embedded PC. Also, we show that the light output in the up direction for the LED with both surfaces and embedded PC could be as high as five times that of a conventional LED.

  17. Light Emitting Transistors of Organic Single Crystals

    Science.gov (United States)

    Iwasa, Yoshihiro

    2009-03-01

    Organic light emitting transistors (OLETs) are attracting considerable interest as a novel function of organic field effect transistors (OFETs). Besides a smallest integration of light source and current switching devices, OLETs offer a new opportunity in the fundamental research on organic light emitting devices. The OLET device structure allows us to use organic single crystals, in contrast to the organic light emitting diodes (OLEDs), the research of which have been conducted predominantly on polycrystalline or amorphous thin films. In the case of OFETs, use of single crystals have produced a significant amount of benefits in the studies of pursuit for the highest performance limit of FETs, intrinsic transport mechanism in organic semiconductors, and application of the single crystal transistors. The study on OLETs have been made predominantly on polycrystalline films or multicomponent heterojunctions, and single crystal study is still limited to tetracene [1] and rubrene [2], which are materials with relatively high mobility, but with low photoluminescence efficiency. In this paper, we report fabrication of single crystal OLETs of several kinds of highly luminescent molecules, emitting colorful light, ranging from blue to red. Our strategy is single crystallization of monomeric or oligomeric molecules, which are known to have a very high photoluminescence efficiency. Here we report the result on single crystal LETs of rubrene (red), 4,4'-bis(diphenylvinylenyl)-anthracene (green), 1,4-bis(5-phenylthiophene-2-yl)benzene (AC5) (green), and 1,3,6,8-tetraphenylpyrene (TPPy) (blue), all of which displayed ambipolar transport as well as peculiar movement of voltage controlled movement of recombination zone, not only from the surface of the crystal but also from the edges of the crystals, indicting light confinement inside the crystal. Realization of ambipolar OLET with variety of single crystals indicates that the fabrication method is quite versatile to various light

  18. Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, Shin-ichiro, E-mail: s-inoue@nict.go.jp [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Naoki, Tamari [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan); Kinoshita, Toru; Obata, Toshiyuki; Yanagi, Hiroyuki [Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan)

    2015-03-30

    Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.

  19. Light-emitting nanolattices with enhanced brightness

    Science.gov (United States)

    Ng, Ryan C.; Mandal, Rajib; Anthony, Rebecca J.; Greer, Julia R.

    2017-02-01

    Three-dimensional (3D) photonic crystals have potential in solid state lighting applications due to their advantages over conventional planar thin film devices. Periodicity in a photonic crystal structure enables engineering of the density of states to improve spontaneous light emission according to Fermi's golden rule. Unlike planar thin films, which suffer significantly from total internal reflection, a 3D architectured structure is distributed in space with many non-flat interfaces, which facilitates a substantial enhancement in light extraction. We demonstrate the fabrication of 3D nano-architectures with octahedron geometry that utilize luminescing silicon nanocrystals as active media with an aluminum cathode and indium tin oxide anode towards the realization of a 3D light emitting device. The developed fabrication procedure allows charge to pass through the nanolattice between two contacts for electroluminescence. These initial fabrication efforts suggest that 3D nano-architected devices are realizable and can reach greater efficiencies than planar devices.

  20. Fast-response Organic Light-emitting Devices for Optical Communication%用于光通信的高速响应有机电致发光器件

    Institute of Scientific and Technical Information of China (English)

    林宏; 周朋超; 王菲菲; 魏娜; 童亮; 王子兴; 魏斌

    2013-01-01

    A new type of optical signal transmission system based on organic light-emitting devices (OLED) has been investigated using direct light intensity modulation method. The results show that the response speed of OLED is significantly related to its emitting layer, light-emitting area and preset direct current voltage bias. The response speed can be improved by doping rubrene in Alq3 emitting layer with shorter fluorescence lifetime. And 100 Mbit/s of the transmission speed has been realized from OLED with a 0.02 mm2 of light-emitting area. Finally, flexible OLED combined with organic polymeric waveguide and organic photoelectric diode has been proposed to realizing the organic photoelectron system.%采用直接光强调制的方法,建立了一种新型有机电致发光器件(OLED)的光电信号传输体系,研究了发光层掺杂、发光面积和预置电压对OLED响应速度的影响.结果发现:与发光层为单独的Alq3的器件相比较,掺杂rubrene的发光层的荧光寿命较短,响应较快;减小OLED的发光面积能提高OLED的响应速度,并在0.02 mm2的发光面积上实现了100 Mbit/s的信号传输速度;同时,预置直流电压也能改善OLED的响应速度.最后,提出将柔性OLED与聚合物波导及有机光电二极管结合,实现了一种全有机的柔性光电子体系.

  1. Electrically and Optically Readable Light Emitting Memories

    Science.gov (United States)

    Chang, Che-Wei; Tan, Wei-Chun; Lu, Meng-Lin; Pan, Tai-Chun; Yang, Ying-Jay; Chen, Yang-Fang

    2014-06-01

    Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application.

  2. Micro-hardness evaluation of a micro-hybrid composite resin light cured with halogen light, light-emitting diode and argon ion laser.

    Science.gov (United States)

    Rode, Katia M; de Freitas, Patricia M; Lloret, Patricia R; Powell, Lynn G; Turbino, Miriam L

    2009-01-01

    This in vitro study aimed to determine whether the micro-hardness of a composite resin is modified by the light units or by the thickness of the increment. Composite resin disks were divided into 15 groups (n = 5), according to the factors under study: composite resin thickness (0 mm, 1 mm, 2 mm , 3 mm and 4 mm) and light units. The light activation was performed with halogen light (HL) (40 s, 500 mW/cm(2)), argon ion laser (AL) (30 s, 600 mW/cm(2)) or light-emitting diode (LED) (30 s, 400 mW/cm(2)). Vickers micro-hardness tests were performed after 1 week and were carried out on the top surface (0 mm-control) and at different depths of the samples. Analysis of variance (ANOVA) and Tukey tests (P hardness values than the LED. In groups with 3 mm and 4 mm thickness, the HL also showed higher micro-hardness values than the groups activated by the AL and the LED. Only the HL presented satisfactory polymerization with 3 mm of thickness. With a 4 mm increment no light unit was able to promote satisfactory polymerization.

  3. SEMICONDUCTOR DEVICES: Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes

    Science.gov (United States)

    Xiaoli, Ji; Fuhua, Yang; Junxi, Wang; Ruifei, Duan; Kai, Ding; Yiping, Zeng; Guohong, Wang; Jinmin, Li

    2010-09-01

    Asymmetric InGaN/GaN multiple-quantum well (MQW) light-emitting diodes were fabricated to expose the luminescence distribution and explore the hole transport. Under electrical injection, the sample with a wNQW active region in which the first QW nearest the p-side (QW1) is wider than the subsequent QWs shows a single long-wavelength light-emission peak arising from QW1. The inverse nWQW sample with a narrow QW1 shows one short-wavelength peak and one long-wavelength peak emitted separately from QW1 and the subsequent QWs. Increasing the barrier thickness between QW1 and the second QW (QWB1) in the nWQW structure, the long-wavelength peak is suppressed and the total light-emission intensity decreases. It was concluded that the nWQW and thin-QWB1 structure can improve the hole transport, and hence enhance the light-emission from the subsequent QWs and increase the internal quantum efficiency.

  4. Atom probe tomography of a commercial light emitting diode

    Science.gov (United States)

    Larson, D. J.; Prosa, T. J.; Olson, D.; Lefebvre, W.; Lawrence, D.; Clifton, P. H.; Kelly, T. F.

    2013-11-01

    The atomic-scale analysis of a commercial light emitting diode device purchased at retail is demonstrated using a local electrode atom probe. Some of the features are correlated with transmission electron microscopy imaging. Subtle details of the structure that are revealed have potential significance for the design and performance of this device.

  5. Solar-energy production and energy-efficient lighting: photovoltaic devices and white-light-emitting diodes using poly(2,7-fluorene), poly(2,7-carbazole), and poly(2,7-dibenzosilole) derivatives.

    Science.gov (United States)

    Beaupré, Serge; Boudreault, Pierre-Luc T; Leclerc, Mario

    2010-02-23

    World energy needs grow each year. To address global warming and climate changes the search for renewable energy sources with limited greenhouse gas emissions and the development of energy-efficient lighting devices are underway. This Review reports recent progress made in the synthesis and characterization of conjugated polymers based on bridged phenylenes, namely, poly(2,7-fluorene)s, poly(2,7-carbazole)s, and poly(2,7-dibenzosilole)s, for applications in solar cells and white-light-emitting diodes. The main strategies and remaining challenges in the development of reliable and low-cost renewable sources of energy and energy-saving lighting devices are discussed.

  6. Electrically driven surface plasmon light-emitting diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  7. Theory of piezo-phototronics for light-emitting diodes.

    Science.gov (United States)

    Zhang, Yan; Wang, Zhong Lin

    2012-09-04

    Devices fabricated by using the inner-crystal piezopotential as a "gate" voltage to tune/control the carrier generation, transport, and recombination processes at the vicinity of a p-n junction are named piezo-phototronics. Here, the theory of the photon emission and carrier transport behavior in piezo-phototronic devices is investigated as a p-n junction light-emitting diode. Numerical calculations are given for predicting the photon emission and current-voltage characteristics of a general piezo-phototronic light-emitting diode.

  8. Wavelength-tunable and white-light emission from polymer-converted micropixellated InGaN ultraviolet light-emitting diodes

    Science.gov (United States)

    Heliotis, G.; Gu, E.; Griffin, C.; Jeon, C. W.; Stavrinou, P. N.; Dawson, M. D.; Bradley, D. D. C.

    2006-07-01

    We report the use of light-emitting conjugated polymer materials to wavelength-convert the emission from a two-dimensional array of micropixellated InGaN light-emitting diodes (LEDs). We demonstrate hybrid organic/inorganic light-emitting devices that can operate across the entire visible spectrum, and we also fabricate white-emitting versions of these devices by employing single layers of carefully adjusted polymer blends in which cascade non-radiative energy transfer occurs between the constituent materials. Additional colours may be easily obtained by tuning the composition of the polymer blends. Our work demonstrates that the combination of conjugated polymers and UV micro-LED arrays provides an attractive approach to developing microscale wavelength-tunable light sources and may provide a route to low-cost full-colour microdisplays and other instrumentation devices.

  9. Hybrid silicon evanescent devices

    Directory of Open Access Journals (Sweden)

    Alexander W. Fang

    2007-07-01

    Full Text Available Si photonics as an integration platform has recently been a focus of optoelectronics research because of the promise of low-cost manufacturing based on the ubiquitous electronics fabrication infrastructure. The key challenge for Si photonic systems is the realization of compact, electrically driven optical gain elements. We review our recent developments in hybrid Si evanescent devices. We have demonstrated electrically pumped lasers, amplifiers, and photodetectors that can provide a low-cost, scalable solution for hybrid integration on a Si platform by using a novel hybrid waveguide architecture, consisting of III-V quantum wells bonded to Si waveguides.

  10. DNA Bases Thymine and Adenine in Bio-Organic Light Emitting Diodes

    Science.gov (United States)

    2014-11-24

    DNA Bases Thymine and Adenine in Bio-Organic Light Emitting Diodes Eliot F. Gomez1, Vishak Venkatraman1, James G. Grote2 & Andrew J. Steckl1...45433-7707 USA. We report on the use of nucleic acid bases (NBs) in organic light emitting diodes (OLEDs). NBs are small molecules that are the basic...polymer has been a frequent natural material integrated in electronic devices. DNA has been used in organic light - emitting diodes (OLEDs)4,5,7–14

  11. Electrical and Optical Properties of N, N`-Bis (Inaphthyl-N,N`-Diphenyl-1,1`-Biphenyl-4,4`-Diamine as Hole Transport Layer in Organic Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    M. Y. Lim

    2010-01-01

    Full Text Available Problem statement: The aim of this research was to study the electrical and optical properties of N, N`-bis(Inaphthyl-N,N`-diphenyl-1,1`-biphenyl-4,4`-diamine (NPB organic materials often used as hole transport layer in Organic Light-Emitting Devices (OLED. Approach: The NPB layer was prepared using the thermal evaporation method. From photoluminescence spectra, two peaks at 630 and 480 nm were observed with 55 nm NPB. The electrical conductivity was strongly influenced by the layer thickness. Results: The energy band gap of each NPB layer was successfully presented in the range of 2.4-2.9 eV. Conclusion: This study successfully showed the effect of different thickness of NPB in OLED.

  12. Synthesis, Properties, and Light-Emitting Electrochemical Cell (LEEC) Device Fabrication of Cationic Ir(III) Complexes Bearing Electron-Withdrawing Groups on the Cyclometallating Ligands.

    Science.gov (United States)

    Pal, Amlan K; Cordes, David B; Slawin, Alexandra M Z; Momblona, Cristina; Ortı, Enrique; Samuel, Ifor D W; Bolink, Henk J; Zysman-Colman, Eli

    2016-10-17

    quasireversible nature of the oxidation and reduction waves, fabrication of light-emitting electrochemical cells (LEECs) using these complexes as emitters was possible with the LEECs showing moderate efficiencies.

  13. Logarithmic current electrometer using light emitting diodes

    Science.gov (United States)

    Acharya, Y. B.; Aggarwal, A. K.

    1996-02-01

    The limit of low current measurement using logarithmic current to voltage converter is improved by 6 - 7 orders of magnitude with the use of diodes of large band gap as compared with silicon diodes. Low cost commercially available light emitting diodes (LEDs) have been used for this purpose. A theoretical study and experimental measurement of device constant and reverse saturation currents of the whole class of commercially available LEDs has been carried out. A circuit has been developed which makes use of a new technique for temperature compensation and its performance is compared with the technique in common use. The performance of the amplifier is found to be stable in the temperature range 5 - 600957-0233/7/2/005/img5 for both polarity of signals from 0957-0233/7/2/005/img6 to 0957-0233/7/2/005/img7 A.

  14. Design of vertically-stacked polychromatic light-emitting diodes.

    Science.gov (United States)

    Hui, K N; Wang, X H; Li, Z L; Lai, P T; Choi, H W

    2009-06-01

    A new design for a polychromatic light-emitting diode (LED) is proposed and demonstrated. LED chips of the primary colors are physically stacked on top of each other. Light emitted from each layer of the stack passes through each other, and thus is mixed naturally without additional optics. As a color-tunable device, a wide range of colors can be generated, making it suitable for display purposes. As a phosphor-free white light LED, luminous efficacy of 30 lm/watt was achieved.

  15. White light generation using CdSe/ZnS core shell nanocrystals hybridized with InGaN/GaN light emitting diodes

    Science.gov (United States)

    Nizamoglu, S.; Ozel, T.; Sari, E.; Demir, H. V.

    2007-02-01

    We introduce white light generation using CdSe/ZnS core-shell nanocrystals of single, dual, triple and quadruple combinations hybridized with InGaN/GaN LEDs. Such hybridization of different nanocrystal combinations provides the ability to conveniently adjust white light parameters including the tristimulus coordinates (x,y), correlated colour temperature (Tc) and colour rending index (Ra). We present the design, growth, fabrication and characterization of our white hybrid nanocrystal-LEDs that incorporate combinations of (1) yellow nanocrystals (λPL = 580 nm) on a blue LED (λEL = 440 nm) with (x,y) = (0.37,0.25), Tc = 2692 K and Ra = 14.69; (2) cyan and red nanocrystals (λPL = 500 and 620 nm) on a blue LED (λEL = 440 nm) with (x,y) = (0.37,0.28), Tc = 3246 K and Ra = 19.65; (3) green, yellow and red nanocrystals (λPL = 540, 580 and 620 nm) on a blue LED (λEL = 452 nm) with (x,y) = (0.30,0.28), Tc = 7521 K and Ra = 40.95; and (4) cyan, green, yellow and red nanocrystals (λPL = 500, 540, 580 and 620 nm) on a blue LED (λEL = 452 nm) with (x,y) = (0.24,0.33), Tc = 11 171 K and Ra = 71.07. These hybrid white light sources hold promise for future lighting and display applications with their highly adjustable properties.

  16. White Organic Light-emitting Diodes with A Sr2 SiO4:Eu3+ Color Conversion Layer%White Organic Light-emitting Diodes with A Sr2SiO4:Eu3+ Color Conversion Layer

    Institute of Scientific and Technical Information of China (English)

    Meiso Yokoyama

    2013-01-01

    Hybrid inorganic/organic white organic light emitting diodes (hybrid-WOLEDs) are fabricated by combining the blue phosphorescent organic light emitting diodes (PHOLEDs) with red Sr2 SiO4∶ Eu3+ phosphor spin coated as a color conversion layer (CCL) over the other side of glass substrate on the devices.The basic configuration of the PHOLEDs consists a host material,N,N'-dicarbazolyl-3,5-benzene (mCP) which doped with a blue phosphorescent iridium complexes iridium (Ⅲ)bis [(4,6-di-fluorophenyl)-pyridinato-N-C2'] (FIrpic) to produce high efficient blue organic light emitting diodes.The hybrid-WOLED shows maximum luminous efficiency of 22.1 cd/ A,maximum power efficiency of 11.26 lm/W,external quantum efficiency of 10.2% and CIE coordinates of (0.32,0.34).Moreover,the output spectra and CIE coordinates of the hybrid-WOLED have a small shift in different driving current density,which demonstrate good color stability.

  17. Efficient fluorescent deep-blue and hybrid white emitting devices based on carbazole/benzimidazole compound

    KAUST Repository

    Yang, Xiaohui

    2011-07-28

    We report the synthesis, photophysics, and electrochemical characterization of carbazole/benzimidazole-based compound (Cz-2pbb) and efficient fluorescent deep-blue light emitting devices based on Cz-2pbb with the peak external quantum efficiency of 4.1% and Commission Internationale dÉnclairage coordinates of (0.16, 0.05). Efficient deep-blue emission as well as high triplet state energy of Cz-2pbb enables fabrication of hybrid white organic light emitting diodes with a single emissive layer. Hybrid white emitting devices based on Cz-2pbb show the peak external quantum efficiency exceeding 10% and power efficiency of 14.8 lm/W at a luminance of 500 cd/m2. © 2011 American Chemical Society.

  18. Organic Single-Crystal Light-Emitting Transistor Coupling with Optical Feedback Resonators

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Sawabe, Kosuke; Imakawa, Masaki; Maruyama, Kenichi; Yamao, Takeshi; Hotta, Shu; Iwasa, Yoshihiro; Takenobu, Taishi

    2012-01-01

    Organic light-emitting transistors (OLETs) are of great research interest because they combine the advantage of the active channel of a transistor that can control the luminescence of an in-situ light-emitting diode in the same device. Here we report a novel single-crystal OLET (SCLET) that is coupl

  19. Life test results of OLED-XL long-life devices for use in active matrix organic light emitting diode (AMOLED) displays for head mounted applications

    Science.gov (United States)

    Fellowes, David A.; Wood, Michael V.; Hastings, Arthur R., Jr.; Ghosh, Amalkumar P.; Prache, Olivier

    2007-04-01

    eMagin Corporation has recently developed long-life OLED-XL devices for use in their AMOLED microdisplays for head-worn applications. AMOLED displays have been known to exhibit high levels of performance with regards to contrast, response time, uniformity, and viewing angle, but a lifetime improvement has been perceived to be essential for broadening the applications of OLED's in the military and in the commercial market. The new OLED-XL devices gave the promise of improvements in usable lifetime over 6X what the standard full color, white, and green devices could provide. The US Army's RDECOM CERDEC NVESD performed life tests on several standard and OLED-XL panels from eMagin under a Cooperative Research and Development Agreement (CRADA). Displays were tested at room temperature, utilizing eMagin's Design Reference Kit driver, allowing computer controlled optimization, brightness adjustment, and manual temperature compensation. The OLED Usable Lifetime Model, developed under a previous NVESD/eMagin SPIE paper presented at DSS 2005, has been adjusted based on the findings of these tests. The result is a better understanding of the applicability of AMOLEDs in military and commercial head mounted systems: where good fits are made, and where further development might be needed.

  20. Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range

    Science.gov (United States)

    2009-04-24

    Richmond VA 23284 USA. (e-mail: hmorkoc@vcu.edu). Donald Silversmith is with the Air Force Office of Scientific Research, Arlington, VA 22203 USA (e...for light-emitting optoelectronic devices for the blue/ultraviolet spectral range. Vitaliy Avrutin, Donald Silversmith , Fellow, IEEE, and Hadis Morkoç

  1. White and Red Organic Light Emitting Materials

    Institute of Scientific and Technical Information of China (English)

    CHOW Tahsin J.; CHIU Ching-Wen; TSAI Mu-Lin

    2004-01-01

    Derivatives of 2,3-(1,4-dialkoxyaceno)norbornadiene underwent ring-opening metathesis polymerization (ROMP) upon the catalysis of a ruthenium complex to afford the corresponding polymers. The polymeric materials containing anthracene chromophores emit white electro-luminescence, which can be fabricated into light-emitting diodes (LED). The broad emission band is composed of a blue emission from anthracene and a red emission from aggregates. A single layer device, ITO/polymer/Ca/Al, can be turned on at 7V and exhibits maximum intensity 427 cd/m2 at 15 V. A double layer device, ITO/polymer/TPBI/Mg:Ag (TPBI = (2,2′,2"-(1,3,5-benzenetriyl)-tris(1-phenyl-1H-benzimidazole)) displayed blue light with turn-on voltage 6 V and maximal intensity 930 cd/m2 at 15 V.Derivatives of bisindolylmaleimide were found to form amorphous solid films which exhibit intensive red luminescence. The property of forming glasses can be ascribed to the nonplanar geometry of these molecules. LED devices were fabricated by a layer of pure dye sandwiched between two charge transporting films. The yellow emission spectrum of the devices utilizing Alq (tris(8-hydoxyquinolinato)aluminum) contains a green component from Alq. Pure red emissions can be achieved by replacing Alq with TPBI. Typical devices can be turned on at ~3 V with maximal intensity 2000 cd/m2. White color devices are under current investigation, in which the green Alq layer is replaced by its blue derivative (bis(2-methyl-8-hydoxyquinolinato)(phenolato)aluminum).

  2. Photonic hybrid crystals constructed from in situ host-guest nanoconfinement of a light-emitting complex in metal-organic framework pores

    Science.gov (United States)

    Chaudhari, Abhijeet K.; Ryder, Matthew R.; Tan, Jin-Chong

    2016-03-01

    We report the concept underpinning the facile nanoconfinement of a bulky luminous guest molecule in the pores of a metal-organic framework (MOF) host, which yields a hybrid host ⊃ guest nanomaterial with tunable opto-electronic characteristics and enhanced photostability. Utilizing an in situ host-guest confinement strategy enabled by molecular self-assembly, we show that the highly emitting ZnQ [Zn-(bis-8-hydroxyquinoline)] guest complexes could be rapidly encapsulated within the sodalite nanocages of zeolitic imidazolate framework (ZIF-8) host crystals. The nature of optical and electronic transitions phenomena of the guest-encapsulated ZIF-8 ⊃ ZnQ has been elucidated by means of fluorescence and absorption spectroscopy measurements, and substantiated further via theoretical molecular orbital calculations revealing the plausible host-guest charge transfer mechanism involved. Evidence suggests that its photophysical properties are not only strongly determined by the host-guest co-operative bonding interactions within the environment of the confined MOF nanocage, but also can be engineered to manipulate its emission color chromaticity or to shield light-sensitive emitting guests against rapid photochemical degradation.We report the concept underpinning the facile nanoconfinement of a bulky luminous guest molecule in the pores of a metal-organic framework (MOF) host, which yields a hybrid host ⊃ guest nanomaterial with tunable opto-electronic characteristics and enhanced photostability. Utilizing an in situ host-guest confinement strategy enabled by molecular self-assembly, we show that the highly emitting ZnQ [Zn-(bis-8-hydroxyquinoline)] guest complexes could be rapidly encapsulated within the sodalite nanocages of zeolitic imidazolate framework (ZIF-8) host crystals. The nature of optical and electronic transitions phenomena of the guest-encapsulated ZIF-8 ⊃ ZnQ has been elucidated by means of fluorescence and absorption spectroscopy measurements, and

  3. All-Quantum-Dot Infrared Light-Emitting Diodes

    KAUST Repository

    Yang, Zhenyu

    2015-12-22

    © 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

  4. All-Quantum-Dot Infrared Light-Emitting Diodes.

    Science.gov (United States)

    Yang, Zhenyu; Voznyy, Oleksandr; Liu, Mengxia; Yuan, Mingjian; Ip, Alexander H; Ahmed, Osman S; Levina, Larissa; Kinge, Sachin; Hoogland, Sjoerd; Sargent, Edward H

    2015-12-22

    Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

  5. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

    Energy Technology Data Exchange (ETDEWEB)

    Ramírez, J. M., E-mail: jmramirez@el.ub.edu; Berencén, Y.; Garrido, B. [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Cueff, S. [Institut des Nanotechnologies de Lyon, École Centrale de Lyon, Écully 69134 (France); Labbé, C. [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

    2014-08-28

    Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.

  6. Simulation and Experimental Study on Anti-reflection Characteristics of Nano-patterned Si Structures for Si Quantum Dot-Based Light-Emitting Devices.

    Science.gov (United States)

    Shao, Wenyi; Lu, Peng; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji

    2016-12-01

    Surface-textured structure is currently an interesting topic since it can efficiently reduce the optical losses in advanced optoelectronic devices via light management. In this work, we built a model in finite-difference time-domain (FDTD) solutions by setting the simulation parameters based on the morphology of the Si nanostructures and compared with the experimental results in order to study the anti-reflection behaviors of the present nano-patterned structures. It is found that the reflectance is gradually reduced by increasing the depth of Si nanostructures which is in well agreement with the experimental observations. The reflectance can be lower than 10 % in the light range from 400 to 850 nm for Si nano-patterned structures with a depth of 150 nm despite the quite low aspect ratio, which can be understood as the formation of gradually changed index layer and the scattering effect of Si nano-patterned structures. By depositing the Si quantum dots/SiO2 multilayers on nano-patterned Si substrate, the reflectance can be further suppressed and the luminescence intensity centered at 820 nm from Si quantum dots is enhanced by 6.6-fold compared with that of flat one, which can be attributed to the improved light extraction efficiency. However, the further etch time causes the reduction of luminescence intensity from Si quantum dots which may ascribe to the serious surface recombination of carriers.

  7. New yellow-emitting Whitlockite-type structure Sr(1.75)Ca(1.25)(PO4)2:Eu(2+) phosphor for near-UV pumped white light-emitting devices.

    Science.gov (United States)

    Ji, Haipeng; Huang, Zhaohui; Xia, Zhiguo; Molokeev, Maxim S; Atuchin, Victor V; Fang, Minghao; Huang, Saifang

    2014-05-19

    New compound discovery is of interest in the field of inorganic solid-state chemistry. In this work, a whitlockite-type structure Sr1.75Ca1.25(PO4)2 newly found by composition design in the Sr3(PO4)2-Ca3(PO4)2 join was reported. Crystal structure and luminescence properties of Sr1.75Ca1.25(PO4)2:Eu(2+) were investigated, and the yellow-emitting phosphor was further employed in fabricating near-ultraviolet-pumped white light-emitting diodes (w-LEDs). The structure and crystallographic site occupancy of Eu(2+) in the host were identified via X-ray powder diffraction refinement using Rietveld method. The Sr1.75Ca1.25(PO4)2:Eu(2+) phosphors absorb in the UV-vis spectral region of 250-430 nm and exhibit an intense asymmetric broadband emission peaking at 518 nm under λex = 365 nm which is ascribed to the 5d-4f allowed transition of Eu(2+). The luminescence properties and mechanism are also investigated as a function of Eu(2+) concentration. A white LED device which is obtained by combining a 370 nm UV chip with commercial blue phosphor and the present yellow phosphor has been fabricated and exhibit good application properties.

  8. Solid-state, ambient-operation thermally activated delayed fluorescence from flexible, non-toxic gold-nanocluster thin films: towards the development of biocompatible light-emitting devices

    Science.gov (United States)

    Talite, M. J. A.; Lin, H. T.; Jiang, Z. C.; Lin, T. N.; Huang, H. Y.; Heredia, E.; Flores, A.; Chao, Y. C.; Shen, J. L.; Lin, C. A. J.; Yuan, C. T.

    2016-08-01

    Luminescent gold nanoclusters (AuNCs) with good biocompatibility have gained much attention in bio-photonics. In addition, they also exhibit a unique photo-physical property, namely thermally activated delayed fluorescence (TADF), by which both singlet and triplet excitons can be harvested. The combination of their non-toxic material property and unique TADF behavior makes AuNCs biocompatible nano-emitters for bio-related light-emitting devices. Unfortunately, the TADF emission is quenched when colloidal AuNCs are transferred to solid states under ambient environment. Here, a facile, low-cost and effective method was used to generate efficient and stable TADF emissions from solid AuNCs under ambient environment using polyvinyl alcohol as a solid matrix. To unravel the underlying mechanism, temperature-dependent static and transient photoluminescence measurements were performed and we found that two factors are crucial for solid TADF emission: small energy splitting between singlet and triplet states and the stabilization of the triplet states. Solid TADF films were also deposited on the flexible plastic substrate with patterned structures, thus mitigating the waveguide-mode losses. In addition, we also demonstrated that warm white light can be generated based on a co-doped single emissive layer, consisting of non-toxic, solution-processed TADF AuNCs and fluorescent carbon dots under UV excitation.

  9. High saturated blue phosphorescent organic lighting emitting devices%高饱和度蓝色磷光有机发光器件

    Institute of Scientific and Technical Information of China (English)

    丁磊; 张方辉; 李艳飞; 梁田静; 张静

    2011-01-01

    使用典型天蓝色磷光材料FIrpic作为磷光金属微腔有机发光器件(OLED)的发光层,以高反射的Al膜作为阴极顶电极和半透明的Al膜作为阳极底电极,采用空穴和电子注入层MoO3和LiF,制备了结构glass/Al(15nm)/MoO3(znm)/NPD(40nm)/mCP:Flrpic(30Ftm,7%)/BCP(20nm)/Alqa(20nm)/LiF(1nm)/Al(150nm)的底发射磷光金属微腔OLED,微腔OLED正方向电致发光(EL)光谱的中心波长为468nm,半波宽(FWHM)约为24nm,色坐标为(0.14,0.15),其发光波长得到调制,光谱得到窄化。理论模拟得到微腔OLED的发光增强因子与实际光谱吻合。%The sky-blue phosphor Flrpic-based electrophosphorescent bottom-emitting metallic microcavity organic lighvemitting device (OLED) employs a structure of glass/Al(15 nm)/MoO3 (x nm)/NPD (40 nm)/ mCP:FIrpie(30 nm,7%)/13CP(20 nm)/Alq3 (20 nm)/LiF(1 nm)/Al(150 nm),using MoO3 and LiF as efficient hole and electron injection layers, respectively. The cavity structure consists of the highly reflective Al cathode and the semitransparent Al anode. The emission spectrum of the microcavity OLED is centered at 468 nm with a full width at half maximum (FWHM) of 24 nm,and CIE color coordinates are x=0. 14 and y=0.15. It's indicated that the spectrum is modulated and narrowed. Theoretical simulations of the enhancement factor of the microcavity OLED agree with experimented results well.

  10. Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    FENG Lie-Feng; LI Yang; LI Ding; WANG Cun-Da; ZHANG Guo-Yi; YAO Dong-Sheng; LIU Wei-Fang; XING Peng-Fei

    2011-01-01

    Frequency responses of modulated electroluminescence (EL) of light-emitting diodes were measured using a testing setup.With increasing frequency of the ac signal,the relative light intensity (RLI) clearly decreases.Furthermore,a peculiar asynchrony between the RLI and ac small-signal is observed.At frequencies higher than 10kHz,the RLI clearly lags behind the ac signal and the absolute value of the lagging angle is nearly proportional to the signal frequency.Using the classical recombination model of light-emitting diodes under ac small-signal modulation,these abnormal characteristics of modulated EL can be clearly explained.High-power light-emitting diodes (LEDs) have received great attention recently owing to their applications in energy-saving lights,display items and many other fields;therefore,the optical and electrical characteristics of LEDs at forward bias hold significant potential for research.[1-4] However,for a new kind of light emission device,the general research on its performance focuses on the light emission and dc currentvoltage (I-V) characteristics.%Frequency responses of modulated electroluminescence (EL) of light-emitting diodes were measured using a testing setup. With increasing frequency of the ac signal, the relative light intensity (RLI) clearly decreases. Furthermore, a peculiar asynchrony between the RLI and ac small-signal is observed. At frequencies higher than 10kHz, the RLI clearly lags behind the ac signal and the absolute value of the lagging angle is nearly proportional to the signal frequency. Using the classical recombination model of light-emitting diodes under ac small-signal modulation, these abnormal characteristics of modulated EL can be clearly explained.

  11. Phosphorescent organic light emitting diodes with high efficiency and brightness

    Science.gov (United States)

    Forrest, Stephen R; Zhang, Yifan

    2015-11-12

    An organic light emitting device including a) an anode; b) a cathode; and c) an emissive layer disposed between the anode and the cathode, the emissive layer comprising an organic host compound and a phosphorescent compound exhibiting a Stokes Shift overlap greater than 0.3 eV. The organic light emitting device may further include a hole transport layer disposed between the emissive layer and the anode; and an electron transport layer disposed between the emissive layer and the cathode. In some embodiments, the phosphorescent compound exhibits a phosphorescent lifetime of less than 10 .mu.s. In some embodiments, the concentration of the phosphorescent compound ranges from 0.5 wt. % to 10 wt. %.

  12. Flip-chip light emitting diode with resonant optical microcavity

    Science.gov (United States)

    Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

    2005-11-29

    A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

  13. Bright light-emitting diodes based on organometal halide perovskite.

    Science.gov (United States)

    Tan, Zhi-Kuang; Moghaddam, Reza Saberi; Lai, May Ling; Docampo, Pablo; Higler, Ruben; Deschler, Felix; Price, Michael; Sadhanala, Aditya; Pazos, Luis M; Credgington, Dan; Hanusch, Fabian; Bein, Thomas; Snaith, Henry J; Friend, Richard H

    2014-09-01

    Solid-state light-emitting devices based on direct-bandgap semiconductors have, over the past two decades, been utilized as energy-efficient sources of lighting. However, fabrication of these devices typically relies on expensive high-temperature and high-vacuum processes, rendering them uneconomical for use in large-area displays. Here, we report high-brightness light-emitting diodes based on solution-processed organometal halide perovskites. We demonstrate electroluminescence in the near-infrared, green and red by tuning the halide compositions in the perovskite. In our infrared device, a thin 15 nm layer of CH3NH3PbI(3-x)Cl(x) perovskite emitter is sandwiched between larger-bandgap titanium dioxide (TiO2) and poly(9,9'-dioctylfluorene) (F8) layers, effectively confining electrons and holes in the perovskite layer for radiative recombination. We report an infrared radiance of 13.2 W sr(-1) m(-2) at a current density of 363 mA cm(-2), with highest external and internal quantum efficiencies of 0.76% and 3.4%, respectively. In our green light-emitting device with an ITO/PEDOT:PSS/CH3NH3PbBr3/F8/Ca/Ag structure, we achieved a luminance of 364 cd m(-2) at a current density of 123 mA cm(-2), giving external and internal quantum efficiencies of 0.1% and 0.4%, respectively. We show, using photoluminescence studies, that radiative bimolecular recombination is dominant at higher excitation densities. Hence, the quantum efficiencies of the perovskite light-emitting diodes increase at higher current densities. This demonstration of effective perovskite electroluminescence offers scope for developing this unique class of materials into efficient and colour-tunable light emitters for low-cost display, lighting and optical communication applications.

  14. Synthesis of Conjugated Polymers for Light Emitting and Photovoltalc Applications

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    1 Results The initial report of polymeric light-emitting diodes (PLEDs) based on poly(p-phenylenevinylene) gave birth to an intense research effort in conjugated polymers, primarily focused on the development of optoelectronic and electrochemical devices. Significant developments in modern synthetic chemistry, especially the chemistry of carbon-carbon bond formation have allowed the synthesis of various well-defined conjugated polymers and oligomers with optimized physical properties.Meanwhile, these re...

  15. Influence of Hole Buffer Layer ZnO on Properties of Organic Light-Emitting Devices%ZnO空穴缓冲层对OLED性能的影响

    Institute of Scientific and Technical Information of China (English)

    贾许望; 关云霞; 牛连斌; 黄琳琳; 刘德江; 傅小强

    2012-01-01

    本文利用无机材料ZnO作为空穴缓冲层,制备了结构为ITO/ZnO/NPB/Alq3/Al的有机电致发光器件.用计算机控制的KEITHLEY2400-PR655系统测量器件的电压-电流-亮度特性.研究结果表明,当ZnO薄膜的厚度为2 nm时,器件的电流效率可达1.65 cd/A,最大亮度为3 449 cd/m2;而没有加入缓冲层的同类器件,最大亮度仅为869.7 cd/m2,最大电流效率为0.46 cd/A.由此可以看出,加入ZnO空穴缓冲层后,最大亮度提高3.97倍,最大电流效率提高3.59倍.分析认为适当厚度的ZnO薄膜降低了发光层空穴的浓度,提高了电子和空穴的复合率,从而降低了电流密度,提高了器件的电流效率,改善了器件性能.%Organic light emitting diodes (OLEDs) are very promising candidates for flat-panel device applications due to low power consumption, improved contrast, wide viewing angle, self-emission and brightness in comparison to liquid crystal or plasma displays. The efficiency of OLEDs is highly dependent on the carrier injection behavior. To improve efficiency of the device, we used inorganic material ZnO as hole buffer layer. The device was built on ITO (sheet resistance 20 Ω/□) glass which was thoroughly cleaned. After the oxygen plasma treatment, the substrates were loaded into a vacuum chamber with a base pressure of 4. 0×10-4 Pa. NPB, ZnO, Alq3 and electrode were thermally deposited without breaking the vacuum respectively. The structure was as follows; ITO/ZnO/NPB/ Alq3/Al. In conclusion, it was found that 2 nm the ZnO layer can greatly improve the performance of the organic light emitting diode. The improved efficiency of the device could be due to the ultra-thin ZnO layer acting as the decreased holes injection into the emissive layer, which would make the number of electrons and holes injected into the emitter layer balance.

  16. Organic light-emitting diodes from homoleptic square planar complexes

    Science.gov (United States)

    Omary, Mohammad A

    2013-11-12

    Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

  17. Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

    2014-06-09

    The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

  18. Light-Emitting Diodes: Learning New Physics

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  19. Light-Emitting Diodes: Solving Complex Problems

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the fourth paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide readers with the description of experiments and the pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper provided…

  20. Light-Emitting Diodes: A Hidden Treasure

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  1. Light-Emitting Diodes: A Hidden Treasure

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  2. Light-Emitting Diodes: Learning New Physics

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  3. 小分子有机电致发光器件和材料的研究及应用%Development of Devices and Materials for Small Molecular Organic Light-emitting Diodes and Hurdles for Applications

    Institute of Scientific and Technical Information of China (English)

    密保秀; 王海珊; 高志强; 王旭鹏; 陈润锋; 黄维

    2011-01-01

    Organic light-emitting diodes (OLEDs) are electrical driven devices which contain organic materials as emitting media.OLEDs have attracted attention widely in modern science and technology, due to their good features of high brightness, quick response, large viewing angle, simple manufacture process, and flexibility,etc.Currently, OLEDs have stridden forward to commercialization in its application field, such as flat panel display (FPD) and solid state lighting (SSL).Although small-size FPD products based on OLED have been in the markets, and prototype products in large dimensions also have come to true, there still exist challenges and hurdles.In this paper, we review the progress in OLED research of devices and materials, as well as OLED applications.Firstly, devices with different structures, such as host emitter based- and dopant emitter based devices, single-, double-, triple- and multilayer devices, as well as white 0LED device are discussed, focusing on their working principles, corresponding device features and mechanism differences among them.Secondly, after introducing the strategies for OLED material research, different types of materials including hole transport materials, electron transport materials, various color emitters, and surface modification materials, are summarized,with their performance in OLED presented.Finally, the current challenges for applications are highlighted, and the focus of future research and development are proposed.%有机电致发光器件(OLED)是在电场作用下,以有机材料为活性发光层的器件.由于OLED具有亮度高、响应快、视角宽、工艺简单、可柔性等优点,在现代科学研究及技术应用中备受关注.其商业化应用,诸如平板显示(FPD)和固体照明(SSL)等,正在不断向前推进.本文综述了小分子OLED的各种器件结构和功能材料研究进展以及该领域存在的问题和挑战.在器件结构方面,着重介绍了每种器件的结构及相关工作原理

  4. Luminescence Properties of Red Phosphorescent Microcavity Organic Light-emitting Devices%红色磷光微腔有机电致发光器件的发光性能

    Institute of Scientific and Technical Information of China (English)

    张春玉; 秦莉; 王洪杰

    2014-01-01

    制备了结构为 G/DBR /ITO /MoO3(1 nm)/TcTa(55 nm )/CBP:Ir(piq)2acac(44 nm,6%)/TPBI(55 nm)/LiF(1 nm)/Al(80 nm)的红色磷光微腔有机电致发光器件(MOLED),同时制作了无腔对比器件OLED,研究微腔结构对磷光器件发光性能的影响。研究发现,OLED的电致发光( EL)峰值为626 nm,半高全宽( FWHM)为92 nm;MOLED的发光峰值为628 nm, FWHM为42 nm,窄化了1/2。MOLED的最大亮度、最大电流效率、最大外量子效率(EQE)分别为121000 cd/m2、27.8 cd/A和28.4%,OLED的最大亮度、最大电流效率、最大EQE分别为54500 cd/m2、13.1 cd/A和16.6%。结果表明,微腔器件的发光性能与无腔器件相比得到了较大幅度的提升。%Red phosphorescent microcavity organic light-emitting device ( MOLED) with structure of Glass/DBR /ITO /MoO3(1 nm)/TcTa(55 nm)/CBP:Ir(piq)2acac(44 nm, 6%)/TPBI(55 nm)/LiF(1 nm)/Al(80 nm) was fabricated. For comparison, an OLED without cavity also was fabrica-ted. The effect of microcavity structure on luminescent properties of phosphorescent devices was studied. The electroluminescence (EL) spectrum peak of OLED is at 626 nm, and the full width at half maximum ( FWHM) is 92 nm. The electroluminescence ( EL) spectrum peak of MOLED is at 628 nm, and the FWHM is 42 nm which is narrowed half compared with the 92 nm value. The mi-cro cavity structure can narrow the luminescence spectrum of OLED and improve the colour purity. For MOLED, the maximum brightness, the maximum current efficiency, the maximum external quantum efficiency (EQE) are 121 000 cd/m2, 27. 8 cd/A and 28. 4%, respectively. For OLED, its maximum brightness, current efficiency and external quantum efficiency are 54 500 cd/m2 , 13. 1 cd/A and 16. 6%, respectively. Comparing with the no cavity device, the luminescence properties of microcavity device have been improved greatly.

  5. Safety of light emitting diodes in toys.

    Science.gov (United States)

    Higlett, M P; O'Hagan, J B; Khazova, M

    2012-03-01

    Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

  6. Recent Progress toward white organic light emitting diodes

    Institute of Scientific and Technical Information of China (English)

    Tao Yu-Tai

    2004-01-01

    An efficient and stable white organic light emitting diode (WOLED) is highly desirable in potential applications such as lighting, background light source, and full color display.A series of highly fluorescent dyes based on a dipyrazolopyridine skeleton,1,7-diphenyl-l,7-dihydrodipyrazolo[3,4-b,4′,3′-e]pyridine, were synthesized and evaluated as emitting as well as charge-transporting material in the fabrication of electroluminescent devices.Several of the blue derivatives are found to be useful as the source of blue emission in fabricating bright white-emitting devices. The choice of dopants, cathode materials, electron-transporting materials as well as the device configurations greatly affect the emission profile, efficiencies, as well as the device lifetime. The latest progress in achieving a more efficient, color stable, durable white light device will be discussed.

  7. Stability study of saturated red polymer light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    XU Wei; PENG JunBiao; XU YunHua; WANG Jian; HUANG Zhe; NIU QiaoLi; CAO Yong

    2007-01-01

    Saturated red polymer light-emitting diodes have been fabricated with a single emitting polymer blend layer of poly[2-(2-ethylhexyloxy)-5-methoxy-1,4-phenylenevinylene](MEH-PPV)and poly[9,9-dioctylfluorene-co-4,7-di-2-thienyl-2,1,3-benzothiadiazole](PFO-DBT15).Saturated red emission with the Commission Internationale de I'Eclairage(CIE)coordinates of(0.67,0.33)was obtained.The device stability was investigated.The results showed that energy transfer occurred from MEH-PPV to PFO-DBT15,and MEH-PPV improved the hole injection and transportation.

  8. Inkjet printing the three organic functional layers of two-colored organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Coenen, Michiel J.J., E-mail: Michiel.Coenen@tmc.nl [Holst Centre, PO BOX 8550, 5605 KN Eindhoven (Netherlands); Slaats, Thijs M.W.L.; Eggenhuisen, Tamara M. [Holst Centre, PO BOX 8550, 5605 KN Eindhoven (Netherlands); Groen, Pim [Holst Centre, PO BOX 8550, 5605 KN Eindhoven (Netherlands); Novel Aerospace Materials Group, Faculty of Aerospace Engineering, Delft University of Technology, Kluyverweg 1, 2629HS Delft (Netherlands)

    2015-05-29

    Inkjet printing allows for the roll-2-roll fabrication of organic electronic devices at an industrial scale. In this paper we demonstrate the fabrication of two-colored organic light emitting diodes (OLEDs) in which three adjacent organic device layers were inkjet printed from halogen free inks. The resulting devices demonstrate the possibilities offered by this technique for the fabrication of OLEDs for signage and personalized electronics. - Highlights: • Two-colored organic light emitting diodes with 3 inkjet printed device layers were fabricated. • All materials were printed from halogen free inks. • Inkjet printing of emissive materials is suitable for signage applications.

  9. Response of adult mosquitoes to light emitting diodes placed in resting boxes and in the field.

    Science.gov (United States)

    Resting boxes are passive devices used to attract and capture mosquitoes seeking shelter. Increasing the attractiveness of these devices could improve their effectiveness. Light emitting diodes (LEDs) can be attractive to mosquitoes when used together with other trapping devices. Therefore restin...

  10. Yellow Organic Light-Emitting Devices Based on NPBX Doped CzHQZn%基于NPBX掺杂CzHQZn的黄色有机电致发光器件

    Institute of Scientific and Technical Information of China (English)

    高永慧; 姜文龙; 丁桂英; 丛林; 孟昭晖; 欧阳新华; 曾和平

    2011-01-01

    The performance of yellow organic light emitting devices (OLEDs) based on a no vel material [(E)- 2- (2-(9-ethyl-9H-carbazol-3-yl)vinyl) quinolato- zinc (CzHQZn)]with an emitting/hole- transporting layer as an acceptor was investigated.These devices were fabrica ted as follows: ITO/2T- NATA(30 nm)/NPBX: 25% CzHQZn(x nm)/BCP(10 nm)/Alq3(60- x) nm/LiF(0.5 nm)/Al(x: the thickness of doping layer).The x is 15,20,25,30 nm,respectively, the thickness of Alq3 is correspondingly changed, the total thickness of doping layer and Alq3 is a constant of 60 nm.When x is 20 nm, the thickness of Alq3 is 40 nm, a yellow OLED can be obtained with the CIE coordinates of (0.514 6,0.470 5), the luminance of 1.078 cd/m2 at 4 V.The maximum luminance is 449 0 cd/m2 at 14 V, and the maximum luminous efficiency is 0.98 cd/A.%利用一种既具有空穴传输特性又具有发光特性的新型荧光染料N-乙基咔唑-2-乙烯基-8-羟基喹啉锌[(E)-2-(2-(9-ethyl-9H-carbazol-3-yl)vinyl)quinolato-zinc,CzHQZn]掺杂在NPBX中作为空穴传输层,CzHQZn同时还作为发光的主体,制备了结构为ITO/2T-NATA(30 nm)/NPBX:25%CzHQZn(x nm)/BCP(10 nm)/Alq3(60-x)nm/LiF(0.5 nm)/Al的有机发光器件(x为掺杂发光层的厚度),掺杂发光层的厚度按照15,20,25,30 nm进行变化,相应改变Alq3的厚度,使得这两者的总厚度为60 nm保持不变.当掺杂发光层的厚度是20 nm,Alq3的厚度是40 nm,其他层厚度保持不变时,器件在4 V电压下实现了黄光发射,色坐标为(0.514 6,0.470 5),亮度是1.078 cd/m2.在14 V的电压下,器件最大发光亮度为449 0 cd/m2,最大发光效率为0.98 cd/A.

  11. The AlGaAs light emitting particle detector

    CERN Document Server

    Pozela, J; Silenas, A; Juciene, V; Dapkus, L; Jasutis, V; Tamulaitis, G; Zukauskas, A; Bendorius, R A

    1999-01-01

    An AlGaAs light emitting particle detector was fabricated and investigated experimentally. Light emitting semiconductor Al sub x Ga sub 1 sub - sub x As layers with graded-gap energy band structure were grown, and luminescence spectra were investigated. A light emitting X-ray detector was also fabricated. (author)

  12. Broadband mid-infrared superlattice light-emitting diodes

    Science.gov (United States)

    Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

    2017-05-01

    InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

  13. Efficient organic light emitting-diodes (OLEDs)

    CERN Document Server

    Chang, Yi-Lu

    2015-01-01

    Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

  14. Resonant cavity light-emitting diodes: modeling, design, and optimization

    Science.gov (United States)

    Dumitrescu, Mihail M.; Sipila, Pekko; Vilokkinen, Ville; Toikkanen, L.; Melanen, Petri; Saarinen, Mika J.; Orsila, Seppo; Savolainen, Pekka; Toivonen, Mika; Pessa, Markus

    2000-02-01

    Monolithic top emitting resonant cavity light-emitting diodes operating in the 650 and 880 nm ranges have been prepared using solid-source molecular beam epitaxy growth. Transfer matrix based modeling together with a self- consistent model have been sued to optimize the devices' performances. The design of the layer structure and doping profile was assisted by computer simulations that enabled many device improvements. Among the most significant ones intermediate-composition barrier-reduction layers were introduced in the DBR mirrors for improving the I-V characteristics and the cavity and mirrors were detuned aiming at maximum extraction efficiency. The fabricated devices showed line widths below 15 nm, CW light power output of 8 and 22.5 mW, and external quantum efficiencies of 3 percent and 14.1 percent in the 650 nm and 880 nm ranges, respectively - while the simulations indicate significant performance improvement possibilities.

  15. Investigations of thin p-GaN light-emitting diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    2016-01-01

    We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  16. Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    2016-01-01

    We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  17. Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure

    Science.gov (United States)

    Maiorano, V.; Bramanti, A.; Carallo, S.; Cingolani, R.; Gigli, G.

    2010-03-01

    A bottom contact/top gate ambipolar "p-i-n" layered light emitting field effect transistor with the active medium inserted between two doped transport layers, is reported. The doping profile results crucial to the capability of emitting light, as well as to the electrical characteristics of the device. In this sense, high output current at relative low applied gate/drain voltage and light emission along the whole large area transistor channel are observed, putting the basis to full integration of organic light emitting field effect transistors in planar complex devices.

  18. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

    Directory of Open Access Journals (Sweden)

    Andre F. S. Guedes

    2014-06-01

    Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

  19. Thermal resistance of light emitting diode PCB with thermal vias.

    Science.gov (United States)

    Lee, Hyo Soo; Shin, Hyung Won; Jung, Seung Boo

    2012-04-01

    Light emitting diodes (LEDs) are already familiar for use as lighting sources in various electronic devices and displays. LEDs have many advantages such as long life, low power consumption, and high reliability. In the future, as an alternative to fluorescent lighting, LEDs are certain to receive much attention. However, in components related to advanced LED packages or modules there has been an issue regarding the heat from the LED chip. The LED chip is still being developed for use in high-power devices which generate more heat. In this study, we investigate the variation of thermal resistance in LED modules embedded with thermal vias. Through the analysis of thermal resistance with various test vehicles, we obtained the concrete relationship between thermal resistance and the thermal via structure.

  20. High-Efficiency Light-Emitting Diodes of Organometal Halide Perovskite Amorphous Nanoparticles.

    Science.gov (United States)

    Xing, Jun; Yan, Fei; Zhao, Yawen; Chen, Shi; Yu, Huakang; Zhang, Qing; Zeng, Rongguang; Demir, Hilmi Volkan; Sun, Xiaowei; Huan, Alfred; Xiong, Qihua

    2016-07-26

    Organometal halide perovskite has recently emerged as a very promising family of materials with augmented performance in electronic and optoelectronic applications including photovoltaic devices, photodetectors, and light-emitting diodes. Herein, we propose and demonstrate facile solution synthesis of a series of colloidal organometal halide perovskite CH3NH3PbX3 (X = halides) nanoparticles with amorphous structure, which exhibit high quantum yield and tunable emission from ultraviolet to near-infrared. The growth mechanism and photoluminescence properties of the perovskite amorphous nanoparticles were studied in detail. A high-efficiency green-light-emitting diode based on amorphous CH3NH3PbBr3 nanoparticles was demonstrated. The perovskite amorphous nanoparticle-based light-emitting diode shows a maximum luminous efficiency of 11.49 cd/A, a power efficiency of 7.84 lm/W, and an external quantum efficiency of 3.8%, which is 3.5 times higher than that of the best colloidal perovskite quantum-dot-based light-emitting diodes previously reported. Our findings indicate the great potential of colloidal perovskite amorphous nanoparticles in light-emitting devices.

  1. Field errors in hybrid insertion devices

    Energy Technology Data Exchange (ETDEWEB)

    Schlueter, R.D. [Lawrence Berkeley Lab., CA (United States)

    1995-02-01

    Hybrid magnet theory as applied to the error analyses used in the design of Advanced Light Source (ALS) insertion devices is reviewed. Sources of field errors in hybrid insertion devices are discussed.

  2. Ionic liquid polyoxometalates as light emitting materials

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz-acosta, Denisse [Los Alamos National Laboratory; Del Sesto, Rico E [Los Alamos National Laboratory; Scott, Brian [Los Alamos National Laboratory; Bennett, Bryan L [Los Alamos National Laboratory; Purdy, Geraldine M [Los Alamos National Laboratory; Muenchausen, Ross E [Los Alamos National Laboratory; Mc Kigney, Edward [Los Alamos National Laboratory; Gilbertson, Robert [Los Alamos National Laboratory

    2008-01-01

    The low melting point, negligible vapor pressure, good solubility, and thermal and chemical stability make ionic liquids useful materials for a wide variety of applications. Polyoxometalates are early transition metal oxygen clusters that can be synthesized in many different sizes and with a variety of heterometals. The most attractive feature of POMs is that their physical properties, in particular electrical, magnetic, and optical properties, can be easily modified following known procedures. It has been shown that POMs can exhibit cooperative properties, as superconductivity and energy transfer. POM ionic liquids can be obtained by selecting the appropliate cation. Different alkyl ammonium and alkyl phosphonium salts are being used to produce new POM ionic liquids together with organic or inorganic luminescent centers to design light emitting materials. Ammonium and phosphonium cations with activated, polymerizable groups are being used to further polymerize the ionic liquid into transparent, solid materials with high metal density.

  3. Near infrared polymer light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; YANG Jian; HOU Qiong; MO Yueqi; PENG Junbiao; CAO Yong

    2005-01-01

    High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/L1/L2/Ba/Al, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7- bis(3-hexylthiophen)-2-yl-2,1,3-naphthothiadiazole (HDNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/cm2. The improvement of the diode's performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.

  4. Light-emitting diodes for analytical chemistry.

    Science.gov (United States)

    Macka, Mirek; Piasecki, Tomasz; Dasgupta, Purnendu K

    2014-01-01

    Light-emitting diodes (LEDs) are playing increasingly important roles in analytical chemistry, from the final analysis stage to photoreactors for analyte conversion to actual fabrication of and incorporation in microdevices for analytical use. The extremely fast turn-on/off rates of LEDs have made possible simple approaches to fluorescence lifetime measurement. Although they are increasingly being used as detectors, their wavelength selectivity as detectors has rarely been exploited. From their first proposed use for absorbance measurement in 1970, LEDs have been used in analytical chemistry in too many ways to make a comprehensive review possible. Hence, we critically review here the more recent literature on their use in optical detection and measurement systems. Cloudy as our crystal ball may be, we express our views on the future applications of LEDs in analytical chemistry: The horizon will certainly become wider as LEDs in the deep UV with sufficient intensity become available.

  5. TCNQ Interlayers for Colloidal Quantum Dot Light-Emitting Diodes.

    Science.gov (United States)

    Koh, Weon-kyu; Shin, Taeho; Jung, Changhoon; Cho, Dr-Kyung-Sang

    2016-04-18

    CdSe/CdS/ZnS quantum dot light-emitting diodes (QD-LEDs) show increased brightness (from ca. 18 000 to 27 000 cd m(-2) ) with 7,7,8,8-tetracyanoquinodimethane (TCNQ) between the QD and electron-transfer layers of ZnO nanoparticles. As QD/ZnO layers are known to have interface defects, our finding leads to the importance of interface engineering for QD-LEDs. Although the photoluminescent intensity and decay lifetime of ZnO/TCNQ/QD layers are similar to those of ZnO/QD layers, cyclic voltammetry suggests improved charge transfer of TCNQ/ZnO layers compared to that of pure ZnO layers. This helps us to understand the mechanism of electrically driven QD-LED behavior, which differs from that of conventional solid-state LEDs, and enables the rational design of QD-based optoelectronic devices.

  6. Electroluminescence property of organic light emitting diode (OLED)

    Energy Technology Data Exchange (ETDEWEB)

    Özdemir, Orhan; Kavak, Pelin; Saatci, A. Evrim; Gökdemir, F. Pınar; Menda, U. Deneb; Can, Nursel; Kutlu, Kubilay [Yıldız Technical University, Department of Physics, Esenler, Istanbul (Turkey); Tekin, Emine; Pravadalı, Selin [National Metrology Instıtute of Turkey (TUBİTAK-UME), Kocaeli (Turkey)

    2013-12-16

    Transport properties of electrons and holes were investigated not only in a anthracene-containing poly(p-phenylene-ethynylene)- alt - poly(p-phenylene-vinylene) (PPE-PPV) polymer (AnE-PVstat) light emitting diodes (OLED) but also in an ITO/Ag/polymer/Ag electron and ITO/PEDOT:PSS/polymer/Au hole only devices. Mobility of injected carriers followed the Poole-Frenkel type conduction mechanism and distinguished in the frequency range due to the difference of transit times in admittance measurement. Beginning of light output took place at the turn-on voltage (or flat band voltage), 1.8 V, which was the difference of energy band gap of polymer and two barrier offsets between metals and polymer.

  7. Synthesis and Photophysical Properties of Novel Red Light-Emitting Cyclometalated Iridium(Ⅲ) Complexes

    Institute of Scientific and Technical Information of China (English)

    ZHANG,Xiao-Wei; YANG,Chu-Luo; LI,Zhong-An; HUANG,Bing; QIN,Jin-Gui

    2004-01-01

    @@ Considerable research is currently focused on the organic electrophosphorescent materials due to their high luminescent efficiency. Electrophosphorescent material based on heavy metal complexes is a hot topic in the research of organic light-emitting devices (OLEDs). We synthesized a series of novel cyclometalated heavy metal complexes by introducing pheny-quinoline moieties into ligands by means of a convenient method (Scheme 1), and investigated their photophysical properties which indicated that those compounds exhibited red light-emitting and high luminescent efficiency.These complexes have been characterized by 1H NMR, UV-vis and PL.

  8. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

    Science.gov (United States)

    Li, Ting

    2013-08-13

    The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

  9. Light-Emitting Diodes: Phosphorescent Nanocluster Light-Emitting Diodes (Adv. Mater. 2/2016).

    Science.gov (United States)

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    On page 320, R. R. Lunt and co-workers demonstrate electroluminescence from earth-abundant phosphorescent metal halide nanoclusters. These inorganic emitters, which exhibit rich photophysics combined with a high phosphorescence quantum yield, are employed in red and near-infrared light-emitting diodes, providing a new platform of phosphorescent emitters for low-cost and high-performance light-emission applications.

  10. Escaped and Trapped Emission of Organic Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    LIANG Shi-Xiong; WU Zhao-Xin; ZHAO Xuan-Ke; HOU Xun

    2012-01-01

    By locating the emitters around the first and second antinode of the metal electrode, the escaped and trapped emission of small molecule based bottom emission organic light-emitting diodes is investigated by using an integrating sphere, a fiber spectrometer and a glass hemisphere. It is found that the external coupling ratio by locating the emitters at the second antinode (at a distance of 220 nm from the cathode) is 70%, which is higher than that of an emitter at the first antinode (60 nm from the cathode) in theory and experiment. Extending the "half-space" dipole model by taking the dipole radiation pattern into account, we also calculate the optical coupling efficiency for the emitter at both the first and second antinode. Our experimental and theoretical results will benefit the optimization of device structures for the higher out-coupling efficiency.%By locating the emitters around the first and second antinode of the metal electrode,the escaped and trapped emission of small molecule based bottom emission organic light-emitting diodes is investigated by using an integrating sphere,a fiber spectrometer and a glass hemisphere.It is found that the external coupling ratio by locating the emitters at the second antinode (at a distance of 220 nm from the cathode) is 70%,which is higher than that of an emitter at the first antinode (60nm from the cathode) in theory and experiment.Extending the "half-space" dipole model by taking the dipole radiation pattern into account,we also calculate the optical coupling efficiency for the emitter at both the first and second antinode.Our experimental and theoretical results will benefit the optimization of device structures for the higher out-coupling efficiency.

  11. Emerging Transparent Conducting Electrodes for Organic Light Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Tze-Bin Song

    2014-03-01

    Full Text Available Organic light emitting diodes (OLEDs have attracted much attention in recent years as next generation lighting and displays, due to their many advantages, including superb performance, mechanical flexibility, ease of fabrication, chemical versatility, etc. In order to fully realize the highly flexible features, reduce the cost and further improve the performance of OLED devices, replacing the conventional indium tin oxide with better alternative transparent conducting electrodes (TCEs is a crucial step. In this review, we focus on the emerging alternative TCE materials for OLED applications, including carbon nanotubes (CNTs, metallic nanowires, conductive polymers and graphene. These materials are selected, because they have been applied as transparent electrodes for OLED devices and achieved reasonably good performance or even higher device performance than that of indium tin oxide (ITO glass. Various electrode modification techniques and their effects on the device performance are presented. The effects of new TCEs on light extraction, device performance and reliability are discussed. Highly flexible, stretchable and efficient OLED devices are achieved based on these alternative TCEs. These results are summarized for each material. The advantages and current challenges of these TCE materials are also identified.

  12. Determination of the trap-assisted recombination strength in polymer light emitting diodes

    NARCIS (Netherlands)

    Kuik, M.; Nicolai, H.T.; Lenes, M.; Wetzelaer, G.-J.A.H.; Lu, M.; Blom, P.W.M.

    2011-01-01

    The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination c

  13. Polymer solar cells and infrared light emitting diodes : Dual function low bandgap polymer

    NARCIS (Netherlands)

    Winder, C.; Mühlbacher, D.; Neugebauer, H.; Sariciftci, N.S.; Brabec, C.J.; Janssen, R.A.J.; Hummelen, J.C.

    2002-01-01

    Conjugated Polymers with a HOMO-LUMO transition <2eV, i.e. a low bandgap, respectively, have interesting and desired properties for some thin film optoelectronic devices like light emitting diodes and solar cells. In this contribution we present the implementation of the novel copolymer PTPTB,

  14. Polymer solar cells and infrared light emitting diodes : Dual function low bandgap polymer

    NARCIS (Netherlands)

    Winder, C.; Mühlbacher, D.; Neugebauer, H.; Sariciftci, N.S.; Brabec, C.J.; Janssen, R.A.J.; Hummelen, J.C.

    2002-01-01

    Conjugated Polymers with a HOMO-LUMO transition <2eV, i.e. a low bandgap, respectively, have interesting and desired properties for some thin film optoelectronic devices like light emitting diodes and solar cells. In this contribution we present the implementation of the novel copolymer PTPTB, consi

  15. All-solution processed polymer light-emitting diodes with air stable metal-oxide electrodes

    NARCIS (Netherlands)

    Bruyn, P. de; Moet, D.J.D.; Blom, P.W.M.

    2012-01-01

    We present an all-solution processed polymer light-emitting diode (PLED) using spincoated zinc oxide (ZnO) and vanadium pentoxide (V2O5) as electron and hole injecting contact, respectively. We compare the performance of these devices to the standard PLED design using PEDOT:PSS as anode and Ba/Al as

  16. Fluorescent deep-blue and hybrid white emitting devices based on a naphthalene-benzofuran compound

    KAUST Repository

    Yang, Xiaohui

    2013-08-01

    We report the synthesis, photophysics and electrochemical properties of naphthalene-benzofuran compound 1 and its application in organic light emitting devices. Fluorescent deep-blue emitting devices employing 1 as the emitting dopant embedded in 4-4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) host show the peak external quantum efficiency of 4.5% and Commission Internationale d\\'Énclairage (CIE) coordinates of (0.15, 0.07). Hybrid white devices using fluorescent blue emitting layer with 1 and a phosphorescent orange emitting layer based on an iridium-complex show the peak external quantum efficiency above 10% and CIE coordinates of (0.31, 0.37). © 2013 Published by Elsevier B.V.

  17. Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

    Directory of Open Access Journals (Sweden)

    Siming Chen

    2015-06-01

    Full Text Available Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs as dislocation filter layers (DFLs to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ~1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates.

  18. White light emitting diode based on InGaN chip with core/shell quantum dots

    Science.gov (United States)

    Shen, Changyu; Hong, Yan; Ma, Jiandong; Ming, Jiangzhou

    2009-08-01

    Quantum dots have many applications in optoelectronic device such as LEDs for its many superior properties resulting from the three-dimensional confinement effect of its carrier. In this paper, single chip white light-emitting diodes (WLEDs) were fabricated by combining blue InGaN chip with luminescent colloidal quantum dots (QDs). Two kinds of QDs of core/shell CdSe /ZnS and core/shell/shell CdSe /ZnS /CdS nanocrystals were synthesized by thermal deposition using cadmium oxide and selenium as precursors in a hot lauric acid and hexadecylamine trioctylphosphine oxide hybrid. This two kinds of QDs exhibited high photoluminescence efficiency with a quantum yield more than 41%, and size-tunable emission wavelengths from 500 to 620 nm. The QDs LED mainly consists of flip luminescent InGaN chip, glass ceramic protective coating, glisten cup, QDs using as the photoluminescence material, pyroceram, gold line, electric layer, dielectric layer, silicon gel and bottom layer for welding. The WLEDs had the CIE coordinates of (0.319, 0.32). The InGaN chip white-light-emitting diodes with quantum dots as the emitting layer are potentially useful in illumination and display applications.

  19. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

    KAUST Repository

    Sun, Liangfeng

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

  20. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

    Science.gov (United States)

    Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

  1. Hyperbranched red light-emitting phosphorescent polymers based on iridium complex as the core

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Ting; Yu, Lei; Yang, Yong; Li, Yanhu; Tao, Yun [Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640 (China); Hou, Qiong [School of Chemistry & Environment, South China Normal University, Guangzhou 510006 (China); Ying, Lei, E-mail: msleiying@scut.edu.cn [Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640 (China); Yang, Wei; Wu, Hongbin; Cao, Yong [Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640 (China)

    2015-11-15

    A series of hyperbranched π-conjugated light-emitting polymers containing an iridium complex as the branched core unit and polyfluorene or poly(fluorene-alt-carbazole) as the branched segments were synthesized via a palladium catalyzed Suzuki polymerization. Apparent Förster energy transfer in the photoluminescent spectra as thin films was observed, while no discernible characteristic absorbance and photoluminescence of the iridium complex can be realized in dilute solutions. Copolymers based on poly(fluorene-alt-carbazole) as the branched segments demonstrated enhanced highest occupied molecular orbital energy levels relative to those based on polyfluorene. The electroluminescent spectra of these copolymers exclusively showed the characteristic emission of the iridium complex, with corresponding CIE coordinates of (0.67±0.01, 0.31). All devices exhibited relatively slow roll-off of efficiency, and the best device performance with the maximum luminous efficiency of 5.33 cd A{sup −1} was attained by using PFCzTiqIr3 as the emissive layer. These results indicated that the hyperbranched conjugated architectures can be a promising molecular design strategy for efficient electrophosphorescent light-emitting polymers. - Highlights: • Hyperbranched red light-emitting polymers are synthesized. • Red light-emitting iridium complex is used as the branched core unit. • Hyperbranched polymers based on PFCz exhibit higher luminescence. • The highest luminous efficiency of 5.33 cd A{sup −1} is attained.

  2. Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes

    KAUST Repository

    Wu, Junbo

    2010-01-26

    Theoretical estimates indicate that graphene thin films can be used as transparent electrodes for thin-film devices such as solar cells and organic light-emitting diodes, with an unmatched combination of sheet resistance and transparency. We demonstrate organic light-emitting diodes with solution-processed graphene thin film transparent conductive anodes. The graphene electrodes were deposited on quartz substrates by spincoating of an aqueous dispersion of functionalized graphene, followed by a vacuum anneal step to reduce the sheet resistance. Small molecular weight organic materials and a metal cathode were directly deposited on the graphene anodes, resulting in devices with a performance comparable to control devices on indium-tin-oxide transparent anodes. The outcoupling efficiency of devices on graphene and indium-tin-oxide is nearly identical, in agreement with model predictions. © 2010 American Chemical Society.

  3. Lossless hybridization between photovoltaic and thermoelectric devices.

    Science.gov (United States)

    Park, Kwang-Tae; Shin, Sun-Mi; Tazebay, Abdullah S; Um, Han-Don; Jung, Jin-Young; Jee, Sang-Won; Oh, Min-Wook; Park, Su-Dong; Yoo, Bongyoung; Yu, Choongho; Lee, Jung-Ho

    2013-01-01

    The optimal hybridization of photovoltaic (PV) and thermoelectric (TE) devices has long been considered ideal for the efficient harnessing solar energy. Our hybrid approach uses full spectrum solar energy via lossless coupling between PV and TE devices while collecting waste energy from thermalization and transmission losses from PV devices. Achieving lossless coupling makes the power output from the hybrid device equal to the sum of the maximum power outputs produced separately from individual PV and TE devices. TE devices need to have low internal resistances enough to convey photo-generated currents without sacrificing the PV fill factor. Concomitantly, a large number of p-n legs are preferred to drive a high Seebeck voltage in TE. Our simple method of attaching a TE device to a PV device has greatly improved the conversion efficiency and power output of the PV device (~30% at a 15°C temperature gradient across a TE device).

  4. Amber light-emitting diode comprising a group III-nitride nanowire active region

    Energy Technology Data Exchange (ETDEWEB)

    Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

    2014-07-22

    A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

  5. Optimized Performances of Thick Film Organic Lighting-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    WANG Xiu-Ru; ZHANG Zhi-Qiang; MA Dong-Ge; SUN Run-Guang

    2008-01-01

    @@ The performance of organic light-emitting diodes (OLEDs) with thick film is optimized.The alternative vana-dium oxide (V2O5) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) layers are used to enhance holes in the emissive region, and 4,7-dipheny-1,10-phenanthroline (Bphen) doped 8-tris-hydroxyquinoline alu-minium (Alq3) is used to enhance electrons is the emissive region, thus ITO/V2O5 (8nm)/NPB (52nm)/V2O5 (8nm)/NPB (52 nm)/Alq3 (30 and 45 nm)/Alq3:Bphen (30wt%, 30 and 45 nm)/LiF (1 nm)/Al (120nm) devices are fabricated.The thick-film devices show the turn-on voltage of about 3 V and the maximal power efficiency of 4.51m/W, which is 1.46 times higher than the conventional thin-film OLEDs.

  6. Curing efficacy of light emitting diodes of dental curing units

    Directory of Open Access Journals (Sweden)

    Seyd Mostafa Mousavinasab

    2009-03-01

    Full Text Available Background and aims. The aim of the present study was to compare the efficacy of quartz tungsten halogen (QTH and light emitting diode (LED curing lights on polymerization of resin composite. Materials and Methods. A hybrid resin composite was used to prepare samples which were cured using two QTH and ten LED light curing sources. Twelve groups, each containing ten samples, were prepared using each light source. The cured depth of the resin was determined using ISO 4049 method and Vickers hardness values were determined at 1.0 mm intervals. Data was analyzed by ANOVA and Tukey test. Results. Data analysis demonstrated a significant difference between light sources for depth of cure. At 1.0 mm below the surface all the tested light sources and at 2.0-mm intervals all light sources except two (Optilux 501 and LEDemetron I and at 3.0-mm intervals only two light sources (PenCure and LEDemetron II could produce hardness values higher than 80% of superficial layer values. Conclusion. This study showed that a variety of LED light sources used in the present study are as effective as the high-intensity QTH lights in polymerization of resin composite.

  7. New 3D Stereoconfigurated cis Tris (Fluorenylphenylamino) Benzene with Large Steric Hindrance to Minimize Stacking in Hybrid Light Emitting Devices (Preprint)

    Science.gov (United States)

    2017-05-31

    composition mass of 1-C9. Accordingly, we selected the narrow top-cut and bottom-cut bands for high performance liquid chromatography ( HPLC , µPorasil TM...125 Å, 10 µm, 35×300 mm, mobile phase: hexane‒EtOAc, flow rate: 1.0 mL/min, detector: UV at λ 350 nm) evaluation with the results Fig. 2 HPLC ...stereoisomeric fractions by TLC did match with those of Fig. 2a. Splitting peaks in Fig. 2c might be owing to unevenly injecting samples into the HPLC

  8. Organic light-emitting diodes: High-throughput virtual screening

    Science.gov (United States)

    Hirata, Shuzo; Shizu, Katsuyuki

    2016-10-01

    Computer networks, trained with data from delayed-fluorescence materials that have been successfully used in organic light-emitting diodes, facilitate the high-speed prediction of good emitters for display and lighting applications.

  9. Organic light emitting diode with surface modification layer

    Energy Technology Data Exchange (ETDEWEB)

    Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

    2017-09-12

    An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

  10. Organic light emitting diode with light extracting electrode

    Energy Technology Data Exchange (ETDEWEB)

    Bhandari, Abhinav; Buhay, Harry

    2017-04-18

    An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

  11. Wide-Area Thermal Processing of Light-Emitting Materials

    Energy Technology Data Exchange (ETDEWEB)

    Duty, C.; Quick, N. (AppliCote Associates, LLC)

    2011-09-30

    Silicon carbide based materials and devices have been successfully exploited for diverse electronic applications. However, they have not achieved the same success as Si technologies due to higher material cost and higher processing temperatures required for device development. Traditionally, SiC is not considered for optoelectronic applications because it has an indirect bandgap. However, AppliCote Associates, LLC has developed a laser-based doping process which enables light emission in SiC through the creation of embedded p-n junctions. AppliCote laser irradiation of silicon carbide allows two different interaction mechanisms: (1) Laser conversion or induced phase transformation which creates carbon rich regions that have conductive properties. These conductive regions are required for interconnection to the light emitting semiconducting region. (2) Laser doping which injects external dopant atoms into the substrate that introduces deep level transition states that emit light when electrically excited. The current collaboration with AppliCote has focused on the evaluation of ORNL's unique Pulse Thermal Processing (PTP) technique as a replacement for laser processing. Compared to laser processing, Pulse Thermal Processing can deliver similar energy intensities (20-50 kW/cm2) over a much larger area (up to 1,000 cm2) at a lower cost and much higher throughput. The main findings of our investigation; which are significant for the realization of SiC based optoelectronic devices, are as follows: (1) The PTP technique is effective in low thermal budget activation of dopants in SiC similar to the laser technique. The surface electrical conductivity of the SiC samples improved by about three orders of magnitude as a result of PTP processing which is significant for charge injection in the devices; (2) The surface composition of the SiC film can be modified by the PTP technique to create a carbon-rich surface (increased local C:Si ratio from 1:1 to 2.9:1). This is

  12. Light Emitting, Photovoltaic or Other Electronic Apparatus and System

    Science.gov (United States)

    Ray, William Johnstone (Inventor); Lowenthal, Mark D. (Inventor); Shotton, Neil O. (Inventor); Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

    2016-01-01

    The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

  13. Engineering of Semiconductor Nanocrystals for Light Emitting Applications

    Directory of Open Access Journals (Sweden)

    Francesco Todescato

    2016-08-01

    Full Text Available Semiconductor nanocrystals are rapidly spreading into the display and lighting markets. Compared with liquid crystal and organic LED displays, nanocrystalline quantum dots (QDs provide highly saturated colors, wide color gamut, resolution, rapid response time, optical efficiency, durability and low cost. This remarkable progress has been made possible by the rapid advances in the synthesis of colloidal QDs and by the progress in understanding the intriguing new physics exhibited by these nanoparticles. In this review, we provide support to the idea that suitably engineered core/graded-shell QDs exhibit exceptionally favorable optical properties, photoluminescence and optical gain, while keeping the synthesis facile and producing QDs well suited for light emitting applications. Solid-state laser emitters can greatly profit from QDs as efficient gain materials. Progress towards fabricating low threshold, solution processed DFB lasers that are optically pumped using one- and two-photon absorption is reviewed. In the field of display technologies, the exploitation of the exceptional photoluminescence properties of QDs for LCD backlighting has already advanced to commercial levels. The next big challenge is to develop the electroluminescence properties of QD to a similar state. We present an overview of QLED devices and of the great perspectives for next generation display and lighting technologies.

  14. Temperature-dependent photoluminescence in light-emitting diodes

    Science.gov (United States)

    Lu, Taiping; Ma, Ziguang; Du, Chunhua; Fang, Yutao; Wu, Haiyan; Jiang, Yang; Wang, Lu; Dai, Longgui; Jia, Haiqiang; Liu, Wuming; Chen, Hong

    2014-01-01

    Temperature-dependent photoluminescence (TDPL), one of the most effective and powerful optical characterisation methods, is widely used to investigate carrier transport and localized states in semiconductor materials. Resonant excitation and non-resonant excitation are the two primary methods of researching this issue. In this study, the application ranges of the different excitation modes are confirmed by analysing the TDPL characteristics of GaN-based light-emitting diodes. For resonant excitation, the carriers are generated only in the quantum wells, and the TDPL features effectively reflect the intrinsic photoluminescence characteristics within the wells and offer certain advantages in characterising localized states and the quality of the wells. For non-resonant excitation, both the wells and barriers are excited, and the carriers that drift from the barriers can contribute to the luminescence under the driving force of the built-in field, which causes the existing equations to become inapplicable. Thus, non-resonant excitation is more suitable than resonant excitation for studying carrier transport dynamics and evaluating the internal quantum efficiency. The experimental technique described herein provides fundamental new insights into the selection of the most appropriate excitation mode for the experimental analysis of carrier transport and localized states in p-n junction devices. PMID:25139682

  15. Emission characteristics of light-emitting diodes by confocal microscopy

    Science.gov (United States)

    Cheung, W. S.; Choi, H. W.

    2016-03-01

    The emission profiles of light-emitting diodes have typically be measured by goniophotometry. However this technique suffers from several drawbacks, including the inability to generate three-dimensional intensity profiles as well as poor spatial resolution. These limitations are particularly pronounced when the technique is used to compared devices whose emission patterns have been modified through surface texturing at the micrometer and nanometer scales,. In view of such limitations, confocal microscopy has been adopted for the study of emission characteristics of LEDs. This enables three-dimensional emission maps to be collected, from which two-dimensional cross-sectional emission profiles can be generated. Of course, there are limitations associated with confocal microscopy, including the range of emission angles that can be measured due to the limited acceptance angle of the objective. As an illustration, the technique has been adopted to compare the emission profiles of LEDs with different divergence angles using an objective with a numerical aperture of 0.8. It is found that the results are consistent with those obtained by goniophotometry when the divergence angle is less that the acceptance angle of the objective.

  16. Electrical and optical measurements of the bandgap energy of a light-emitting diode

    Science.gov (United States)

    Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

    2016-03-01

    Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy {{E}\\text{g}} . In the case of light-emitting diodes (LEDs) {{E}\\text{g}} fixes the colour of the light emitted by the diodes. In this article we propose an experiment to compare {{E}\\text{g}} of a green LED obtained by both electrical and optical measurements. The two slightly different results can be explained by the theoretical knowledge of students on solid physics and the internal structure of electronic devices.

  17. Thin Film Encapsulation of Light-Emitting Diodes with Photopolymerized Polyacrylate and Silver Films

    Institute of Scientific and Technical Information of China (English)

    WANG Li-Duo; WU Zhao-Xin; LI Yang; QIU Yong

    2005-01-01

    @@ A thin film encapsulation of organic light-emitting diodes (OLEDs) is investigated with a multi-layer stack of polyacrylate-Ag-polyacrylate-Ag-polyacrylate-Ag-polyacrylate (PAPAPAP). It is shown that the fabrication of polyacrylate films by a wet process does not affect the electroluminescent (EL) characteristics of the devices and polyacrylate films together with the silver layers can perform to minimize oxygen and water diffusion into the organic light-emitting device. The structure of polyacrylate(20 μm)-Ag(200nm)-polyacrylate(20 μm)-Ag(200nm)-polyacrylate(20μm)-Ag(200nm)-polyacrylate(20μm) is demonstrated to enhance dramatically the lifetime of OLEDs.

  18. Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

    DEFF Research Database (Denmark)

    Mesta, Murat; Carvelli, Marco; de Vries, Rein J;

    2013-01-01

    we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile......In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here...... are shown to agree well with experiment. The experimental emission profile was obtained with nanometre resolution from the measured angle- and polarization-dependent emission spectra. The simulations elucidate the crucial role of exciton transfer from green to red and the efficiency loss due to excitons...

  19. Highly Efficient, Simplified, Solution-Processed Thermally Activated Delayed-Fluorescence Organic Light-Emitting Diodes.

    Science.gov (United States)

    Kim, Young-Hoon; Wolf, Christoph; Cho, Himchan; Jeong, Su-Hun; Lee, Tae-Woo

    2016-01-27

    Highly efficient, simplified, solution-processed thermally activated delayed-fluorescence organic light-emitting diodes can be realized by using pure-organic thermally activated delayed fluorescence emitters and a multifunctional buffer hole-injection layer, in which high EQE (≈24%) and current efficiency (≈73 cd A(-1) ) are demonstrated. High-efficiency fluorescence red-emitting and blue-emitting devices can also be fabricated in this manner.

  20. Bright Light-Emitting Diodes Based on Organometal Halide Perovskite Nanoplatelets.

    Science.gov (United States)

    Ling, Yichuan; Yuan, Zhao; Tian, Yu; Wang, Xi; Wang, Jamie C; Xin, Yan; Hanson, Kenneth; Ma, Biwu; Gao, Hanwei

    2016-01-13

    Bright light-emitting diodes based on solution-processable organometal halide perovskite nanoplatelets are demonstrated. The nanoplatelets created using a facile one-pot synthesis exhibit narrow-band emissions at 529 nm and quantum yield up to 85%. Using these nanoparticles as emitters, efficient electroluminescence is achieved with a brightness of 10 590 cd m(-2) . These ligand-capped nanoplatelets appear to be quite stable in moisture, allowing out-of-glovebox device fabrication.

  1. Enhancement of Stability of Polymer Light-Emitting Diodes by Post Annealing

    Institute of Scientific and Technical Information of China (English)

    YAO Bing; XIE Zhi-Yuan; YANG Jun-Wei; CHENG Yan-Xiang; WANG Li-Xiang

    2007-01-01

    We investigate the effect of thermal annealing before and after cathode deposition on the stability of polymer light-emitting diodes (PLEDs) based on green fluorescent polyfluorene derivative. The annealed PLEDs exhibit improved charge transport and red-shift emission compared to the as-fabricated device. The stability of the PLEDs is largely enhanced by post-annealing before and after Ca deposition, which is attributed to the enhanced charge transport and the intimate contact between the cathode and the emissive layer.

  2. Performance evaluation of hybrid VLC using device cost and power over data throughput criteria

    Science.gov (United States)

    Lee, C. C.; Tan, C. S.; Wong, H. Y.; Yahya, M. B.

    2013-09-01

    Visible light communication (VLC) technology has attained its attention in both academic and industry lately. It is determined by the development of light emitting diode (LED) technology for solid-state lighting (SSL).It has great potential to gradually replace radio frequency (RF) wireless technology because it offers unregulated and unlicensed bandwidth to withstand future demand of indoor wireless access to real-time bandwidth-demanding applications. However, it was found to provide intrusive uplink channel that give rise to unpleasant irradiance from the user device which could interfere with the downlink channel of VLC and hence limit mobility to users as a result of small coverage (field of view of VLC).To address this potential problem, a Hybrid VLC system which integrates VLC (for downlink) and RF (for uplink) technology is proposed. It offers a non-intrusive RF back channel that provides high throughput VLC and maintains durability with conventional RF devices. To deploy Hybrid VLC system in the market, it must be energy and cost saving to attain its equivalent economical advantage by comparing to existing architecture that employs fluorescent or LED lights with RF technology. In this paper, performance evaluation on the proposed hybrid system was carried out in terms of device cost and power consumption against data throughput. Based on our simulation, Hybrid VLC system was found to reduce device cost by 3% and power consumption by 68% when compares to fluorescent lights with RF technology. Nevertheless, when it is compared to LED lights with RF technology, our proposed hybrid system is found to achieve device cost saving as high as 47% and reduced power consumption by 49%. Such promising results have demonstrated that Hybrid VLC system is a feasible solution and has paved the way for greater cost saving and energy efficient compares with the current RF architecture even with the increasing requirement of indoor area coverage.

  3. Optical, electrical, and magnetic field studies of organic materials for light emitting diodes and photovoltaic applications

    Science.gov (United States)

    Basel, Tek Prasad

    We studied optical, electrical, and magnetic field responses of films and devices based on organic semiconductors that are used for organic light emitting diodes (OLEDs) and photovoltaic (OPV) solar cell applications. Our studies show that the hyperfine interaction (HFI)-mediated spin mixing is the key process underlying various magnetic field effects (MFE) and spin transport in aluminum tris(8-hydroxyquinoline)[Alq3]-based OLEDs and organic spin-valve (OSV). Conductivity-detected magnetic resonance in OLEDs and magneto-resistance (MR) in OSVs show substantial isotope dependence. In contrast, isotope-insensitive behavior in the magneto-conductance (MC) of same devices is explained by the collision of spin ½ carriers with triplet polaron pairs. We used steady state optical spectroscopy for studying the energy transfer dynamics in films and OLEDs based on host-guest blends of the fluorescent polymer and phosphorescent molecule. We have also studied the magnetic-field controlled color manipulation in these devices, which provide a strong proof for the `polaron-pair' mechanism underlying the MFE in organic devices. The critical issue that hampers organic spintronics device applications is significant magneto-electroluminescence (MEL) at room temperature (RT). Whereas inorganic spin valves (ISVs) show RT magneto-resistance, MR>80%, however, the devices do not exhibit electroluminescence (EL). In contrast, OLEDs show substantive EL emission, and are particularly attractive because of their flexibility, low cost, and potential for multicolor display. We report a conceptual novel hybrid organic/inorganic spintronics device (h-OLED), where we employ both ISV with large MR at RT, and OLED that has efficient EL emission. We investigated the charge transfer process in an OPV solar cell through optical, electrical, and magnetic field measurements of thin films and devices based on a low bandgap polymer, PTB7 (fluorinated poly-thienothiophene-benzodithiophene). We found that

  4. Magnetic field effect in organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Niedermeier, Ulrich

    2009-12-14

    The discovery of a magnetic field dependent resistance change of organic light emitting diodes (OLEDs) in the year 2003 has attracted considerable scientific and industrial research interest. However, despite previous progress in the field of organic spin-electronics, the phenomenon of the ''organic magnetoresistance (OMR) effect'' is not yet completely understood. In order to improve the understanding of the microscopic mechanisms which ultimately cause the OMR effect, experimental investigations as well as theoretical considerations concerning the OMR are addressed in this thesis. In polymer-based OLED devices the functional dependencies of the OMR effect on relevant parameters like magnetic field, operating voltage, operating current and temperature are investigated. Based on these results, previously published models for potential OMR mechanisms are critically analyzed and evaluated. Finally, a concept for the OMR effect is favored which suggests magnetic field dependent changes of the spin state of electron-hole pairs as being responsible for changes in current flow and light emission in OLEDs. In the framework of this concept it is possible to explain all results from own measurements as well as results from literature. Another important finding made in this thesis is the fact that the value of the OMR signal in the investigated OLED devices can be enhanced by appropriate electrical and optical conditioning processes. In particular, electrical conditioning causes a significant enhancement of the OMR values, while at the same time it has a negative effect on charge carrier transport and optical device characteristics. These results can be explained by additional results from charge carrier extraction measurements which suggest that electrical conditioning leads to an increase in the number of electronic trap states inside the emission layer of the investigated OLED devices. The positive influence of trap states on the OMR effect is

  5. High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

    Science.gov (United States)

    Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

    2016-05-01

    Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

  6. Sr0.95Zn0.05Se:Eu2+ and CdSe/ZnS nanocrystals hybrid phosphors for enhancing color rendering index of white light emitting diode.

    Science.gov (United States)

    Chung, Wonkeun; Jung, Hyunchul; Lee, Chang Hun; Kim, Sung Hyun

    2012-07-01

    In this study, the yellow emitting cubic structure of Sr0.95Zn0.05Se:Eu2+ phosphors were prepared by high temperature solid state reaction. The Sr0.95Zn0.05Se:Eu2+ phosphors exhibited strong excitation intensity under 400-460 nm region, and broad band emission appeared at around 545-600 nm due to the d-f transition of Eu2+. To enhance the red emission, HDA/TOP/TOPO capped CdSe/ZnS NCs were synthesized via fast nucleation and slow growth method. The narrow emission peak was located at 615 nm with 69% of high quantum yield. Bright white emission was generated by combining a 460 nm InGaN LED chip with CdSe/ZnS NCs and Sr0.95Zn0.05Se:Eu2+ hybrid phosphors. The fabricated white LEDs showed warm white light with acceptable CIE chromaticity coordinate variation from (0.343, 0.255) at 20 mA to (0.335, 0.250) at 50 mA. The addition of CdSe/ZnS NCs contributed to the extension of white light spectrum by supplement of the red region. The color rendering index was largely enhanced from 41.7 to 79.7 compared to the Sr0.95Zn0.05Se:Eu2+ based phosphors white LED.

  7. Tuning the spectrometric properties of white light by surface plasmon effect using Ag nanoparticles in a colour converting light-emitting diode

    Science.gov (United States)

    Chandramohan, S.; Ryu, Beo Deul; Uthirakumar, P.; Kang, Ji Hye; Kim, Hyun Kyu; Kim, Hyung Gu; Hong, Chang-Hee

    2011-03-01

    We report on the spectral tunability of white light by localized surface plasmon (LSP) effect in a colour converting hybrid device made of CdSe/ZnS quantum dots (QDs) integrated on InGaN/GaN blue light-emitting diodes (LEDs). Silver (Ag) nanoparticles (NPs) are mixed with QDs for generating LSP effect. When the plasmon absorption of Ag NPs is synchronized to the QW emission at 448 nm, the NPs selectively absorb the blue light and subsequently enhance the QD emission. Using this energy transfer scheme, the ( x, y) chromaticity coordinates of the hybrid white LED was tuned from (0.32, 0.17) to (0.43, 0.26), and thereby generated warm white light emission with correlated colour temperature (CCT) around 1800 K. Moreover, a 47% enhancement in the external quantum efficiency (EQE) was realized.

  8. Sodium bromide additive improved film morphology and performance in perovskite light-emitting diodes

    Science.gov (United States)

    Li, Jinghai; Cai, Feilong; Yang, Liyan; Ye, Fanghao; Zhang, Jinghui; Gurney, Robert S.; Liu, Dan; Wang, Tao

    2017-07-01

    Organometal halide perovskite is a promising material to fabricate light-emitting diodes (LEDs) via solution processing due to its exceptional optoelectronic properties. However, incomplete precursor conversion and various defect states in the perovskite light-emitting layer lead to low luminance and external quantum efficiency of perovskite LEDs. We show here the addition of an optimum amount of sodium bromide in the methylammonium lead bromide (MAPbBr3) precursor during a one-step perovskite solution casting process can effectively improve the film coverage, enhance the crystallinity, and passivate ionic defects on the surface of MAPbBr3 crystal grains, resulting in LEDs with a reduced turn-on voltage from 2.8 to 2.3 V and an enhanced maximum luminance from 1059 to 6942 Cd/m2 when comparing with the pristine perovskite-based device.

  9. Substituent effect to prevent autoxidation and improve spectral stability in blue light-emitting polyfluorenes.

    Science.gov (United States)

    Li, Jiu Yan; Ziegler, Andreas; Wegner, Gerhard

    2005-07-18

    A group of fluorene-based polymers, PF-1SOR and PF-2SOR, were synthesized and characterized as blue light-emitting materials. PF-1SOR and PF-2SOR displayed nematic liquid crystalline mesophase in films cast from solution. Compared with conventional polyfluorene, PF-1SOR and PF-2SOR display blue-shifted UV absorption and structureless blue fluorescence. The photoluminescence spectra of PF-1SOR and PF-2SOR were found insensitive against thermal treatment in air up to 200 degrees C and the blue electroluminescence in their light-emitting devices was independent of the driving voltage. Compared to the conventional polyfluorenes, the improved spectral stability of these polymers is attributed to the anti-oxidization effect of (3,5-di(tert-butyl)phenoxy)sulfonyl side groups attached to the backbone.

  10. An Improved Blue Polymer Light-Emitting Diode by Using Sodium Hydroxide/Ca/Al Cathode

    Institute of Scientific and Technical Information of China (English)

    MA Liang; XIE Zhi-Yuan; LIU Jun; YANG Jun-Wei; CHENG Yan-Xiang; WANG Li-Xiang; WANG Fo-Song

    2005-01-01

    @@ The performance of blue polymer light-emitting diodes (PLEDs) based on poly(9,9-dioctylfluorene) (PFO) is improved by introducing a thin layer of sodium hydroxide (NaOH) between the calcium cathode and the PFO emissive layer. By replacing the commonly used Ca/Al cathode by a NaOH (2.5nm)/Ca (10 nm)/Al cathode,the driving voltage is reduced from 8.3 V to 5.4 V and the light-emitting efficiency is enhanced from 0.46cd/A to 0. 72 cd/A for achieving a luminance of 500 cd/m2, respectively. Moreover, the device with NaOH/Ca/Al cathode shows a pure blue emission of (0.17, 0. 12) at high brightnesses. These improvements are attributed to introduction of a thin layer of NaOH that can lower the interfacial barrier and facilitate electron injection.

  11. Soft lithography microlens fabrication and array for enhanced light extraction from organic light emitting diodes (OLEDs)

    Science.gov (United States)

    Leung, Wai Y.; Park, Joong-Mok; Gan, Zhengqing; Constant, Kristen P.; Shinar, Joseph; Shinar, Ruth; ho, Kai-Ming

    2014-06-03

    Provided are microlens arrays for use on the substrate of OLEDs to extract more light that is trapped in waveguided modes inside the devices and methods of manufacturing same. Light extraction with microlens arrays is not limited to the light emitting area, but is also efficient in extracting light from the whole microlens patterned area where waveguiding occurs. Large microlens array, compared to the size of the light emitting area, extract more light and result in over 100% enhancement. Such a microlens array is not limited to (O)LEDs of specific emission, configuration, pixel size, or pixel shape. It is suitable for all colors, including white, for microcavity OLEDs, and OLEDs fabricated directly on the (modified) microlens array.

  12. Low-Voltage, Low-Power, Organic Light-Emitting Transistors for Active Matrix Displays

    Science.gov (United States)

    McCarthy, M. A.; Liu, B.; Donoghue, E. P.; Kravchenko, I.; Kim, D. Y.; So, F.; Rinzler, A. G.

    2011-04-01

    Intrinsic nonuniformity in the polycrystalline-silicon backplane transistors of active matrix organic light-emitting diode displays severely limits display size. Organic semiconductors might provide an alternative, but their mobility remains too low to be useful in the conventional thin-film transistor design. Here we demonstrate an organic channel light-emitting transistor operating at low voltage, with low power dissipation, and high aperture ratio, in the three primary colors. The high level of performance is enabled by a single-wall carbon nanotube network source electrode that permits integration of the drive transistor and the light emitter into an efficient single stacked device. The performance demonstrated is comparable to that of polycrystalline-silicon backplane transistor-driven display pixels.

  13. Emitter Orientation as a Key Parameter in Organic Light-Emitting Diodes

    Science.gov (United States)

    Schmidt, Tobias D.; Lampe, Thomas; Sylvinson, Daniel M. R.; Djurovich, Peter I.; Thompson, Mark E.; Brütting, Wolfgang

    2017-09-01

    The distinct preferential alignment, i.e., horizontal orientation with respect to the substrate plane, of the optical transition dipole moment vectors (TDMVs) of organic dye molecules is of paramount importance for extracting the internally generated power of organic light-emitting diodes (OLEDs) to the outside world. This feature is one of the most promising approaches for the enhancement of the electrical efficacy in state-of-the-art OLEDs, as their internal quantum efficiencies are already close to the ultimate limit. If one can achieve complete horizontal orientation of the TDMVs, it is possible to increase the efficiency by at least 50% because alignment strongly influences the power dissipation into the different optical modes present in such a thin-film device. Thus, this feature of organic light-emitting molecules can lead to advanced performance for future applications. Therefore, we present here a review of recent achievements, ongoing research, and future tasks in this particular area of organic electronics.

  14. Efficient light-emitting diodes based on nanocrystalline perovskite in a dielectric polymer matrix.

    Science.gov (United States)

    Li, Guangru; Tan, Zhi-Kuang; Di, Dawei; Lai, May Ling; Jiang, Lang; Lim, Jonathan Hua-Wei; Friend, Richard H; Greenham, Neil C

    2015-04-08

    Electroluminescence in light-emitting devices relies on the encounter and radiative recombination of electrons and holes in the emissive layer. In organometal halide perovskite light-emitting diodes, poor film formation creates electrical shunting paths, where injected charge carriers bypass the perovskite emitter, leading to a loss in electroluminescence yield. Here, we report a solution-processing method to block electrical shunts and thereby enhance electroluminescence quantum efficiency in perovskite devices. In this method, a blend of perovskite and a polyimide precursor dielectric (PIP) is solution-deposited to form perovskite nanocrystals in a thin-film matrix of PIP. The PIP forms a pinhole-free charge-blocking layer, while still allowing the embedded perovskite crystals to form electrical contact with the electron- and hole-injection layers. This modified structure reduces nonradiative current losses and improves quantum efficiency by 2 orders of magnitude, giving an external quantum efficiency of 1.2%. This simple technique provides an alternative route to circumvent film formation problems in perovskite optoelectronics and offers the possibility of flexible and high-performance light-emitting displays.

  15. Degradation of light emitting diodes: a proposed methodology*

    Institute of Scientific and Technical Information of China (English)

    Sau Koh; Willem Van Driel; G.Q.Zhang

    2011-01-01

    Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters.

  16. Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

    Science.gov (United States)

    Zhang, Zhikun; Du, Jinhong; Zhang, Dingdong; Sun, Hengda; Yin, Lichang; Ma, Laipeng; Chen, Jiangshan; Ma, Dongge; Cheng, Hui-Ming; Ren, Wencai

    2017-02-01

    The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually organic light-emitting diode with a high brightness of about 10,000 cd m-2 that can already satisfy the requirements for lighting sources and displays.

  17. Luminescent ion pairs with tunable emission colors for light-emitting devices and electrochromic switches† †Electronic supplementary information (ESI) available: Details of NMR and MS spectra. See DOI: 10.1039/c6sc02837c Click here for additional data file.

    Science.gov (United States)

    Guo, Song; Huang, Tianci; Liu, Shujuan; Zhang, Kenneth Yin; Yang, Huiran; Han, Jianmei

    2017-01-01

    Most recently, stimuli-responsive luminescent materials have attracted increasing interest because they can exhibit tunable emissive properties which are sensitive to external physical stimuli, such as light, temperature, force, and electric field. Among these stimuli, electric field is an important external stimulus. However, examples of electrochromic luminescent materials that exhibit emission color change induced by an electric field are limited. Herein, we have proposed a new strategy to develop electrochromic luminescent materials based on luminescent ion pairs. Six tunable emissive ion pairs (IP1–IP6) based on iridium(iii) complexes have been designed and synthesized. The emission spectra of ion pairs (IPs) show concentration dependence and the energy transfer process is very efficient between positive and negative ions. Interestingly, IP6 displayed white emission at a certain concentration in solution or solid state. Thus, in this contribution, UV-chip (365 nm) excited light-emitting diodes showing orange, light yellow and white emission colors were successfully fabricated. Furthermore, IPs displayed tunable and reversible electrochromic luminescence. For example, upon applying a voltage of 3 V onto the electrodes, the emission color of the solution of IP1 near the anode or cathode changed from yellow to red or green, respectively. Color tunable electrochromic luminescence has also been realized by using other IPs. Finally, a solid-film electrochromic switch device with a sandwiched structure using IP1 has been fabricated successfully, which exhibited fast and reversible emission color change. PMID:28451179

  18. A Flexible and Thin Graphene/Silver Nanowires/Polymer Hybrid Transparent Electrode for Optoelectronic Devices.

    Science.gov (United States)

    Dong, Hua; Wu, Zhaoxin; Jiang, Yaqiu; Liu, Weihua; Li, Xin; Jiao, Bo; Abbas, Waseem; Hou, Xun

    2016-11-16

    A typical thin and fully flexible hybrid electrode was developed by integrating the encapsulation of silver nanowires (AgNWs) network between a monolayer graphene and polymer film as a sandwich structure. Compared with the reported flexible electrodes based on PET or PEN substrate, this unique electrode exhibits the superior optoelectronic characteristics (sheet resistance of 8.06 Ω/□ at 88.3% light transmittance). Meanwhile, the specific up-to-bottom fabrication process could achieve the superflat surface (RMS = 2.58 nm), superthin thickness (∼8 μm thickness), high mechanical robustness, and lightweight. In addition, the strong corrosion resistance and stability for the hybrid electrode were proved. With these advantages, we employ this electrode to fabricate the simple flexible organic light-emitting device (OLED) and perovskite solar cell device (PSC), which exhibit the considerable performance (best PCE of OLED = 2.11 cd/A(2); best PCE of PSC = 10.419%). All the characteristics of the unique hybrid electrode demonstrate its potential as a high-performance transparent electrode candidate for flexible optoelectronics.

  19. Luminescence and the light emitting diode the basics and technology of leds and the luminescence properties of the materials

    CERN Document Server

    Williams, E W; Pamplin, BR

    2013-01-01

    Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the lu

  20. Highly efficient greenish-blue platinum-based phosphorescent organic light-emitting diodes on a high triplet energy platform

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.; Lu, Z. H., E-mail: zhenghong.lu@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4 (Canada); Wang, X.; Wang, S., E-mail: wangs@chem.queensu.ca [Department of Chemistry, Queen' s University, 90 Bader Lane, Kingston, Ontario K7L 3N6 (Canada); Yang, C. [Department of Chemistry, Wuhan University, Wuhan 430072 (China)

    2014-04-28

    We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

  1. Fundamental emission characteristics of light-emitting liquid crystal cells with rubrene-doped 4-cyano-4'-pentylbiphenyl

    Science.gov (United States)

    Honma, Michinori; Horiuchi, Takao; Tanimoto, Masashi; Nose, Toshiaki

    2014-06-01

    We have investigated the light emission properties in rubrene-doped nematic liquid crystal (LC) cells from the following three standpoints: (i) effect of the heating temperature during the sample preparation, (ii) role of the emissive LC layer thickness, and (iii) role of different LC types used as the emissive layer. As a result, the light-emitting LC cells simultaneously exhibit the features of electrochemiluminescent cells (the carrier transport is governed by an ionic conduction) as well as of organic light-emitting diodes (the luminance strongly depends on the emissive layer thickness). Furthermore, we report that devices with cyano group containing LCs exhibit higher luminance compared to a fluorinated LC.

  2. Low Power, Red, Green and Blue Carbon Nanotube Enabled Vertical Organic Light Emitting Transistors for Active Matrix OLED Displays

    Energy Technology Data Exchange (ETDEWEB)

    McCarthy, M. A. [University of Florida, Gainesville; Liu, B. [University of Florida, Gainesville; Donoghue, E. P. [University of Florida, Gainesville; Kravchenko, Ivan I [ORNL; Kim, D. Y. [University of Florida, Gainesville; So, Franky [University of Florida, Gainesville; Rinzler, A. G. [University of Florida, Gainesville

    2011-01-01

    Organic semiconductors are potential alternatives to polycrystalline silicon as the semiconductor used in the backplane of active matrix organic light emitting diode displays. Demonstrated here is a light-emitting transistor with an organic channel, operating with low power dissipation at low voltage, and high aperture ratio, in three colors: red, green and blue. The single-wall carbon nanotube network source electrode is responsible for the high level of performance demonstrated. A major benefit enabled by this architecture is the integration of the drive transistor, storage capacitor and light emitter into a single device. Performance comparable to commercialized polycrystalline-silicon TFT driven OLEDs is demonstrated.

  3. Blue Light Emitting Diodes based on a partially conjugated Si-containing PPV-copolymer in a multilayer configuration

    NARCIS (Netherlands)

    Garten, F; Hilberer, A; Cacialli, F.; Esselink, F.J; van Dam, Y.; Schlatmann, A.R.; Friend, R.H.; Klapwijk, T.M; Hadziioannou, G

    1997-01-01

    Efficient blue Light Emitting Diodes (LEDs) based on a novel partially conjugated co-polymer (SiPPV) have been realized by a combination of techniques known to enhance the quantum efficiency of organic devices. The copolymer is homogeneously blended in a PVK-matrix to reduce the number of non-radiat

  4. CURRENT STATE OF AUTOMOTIVE LIGHTING EQUIPMENT WITH NON-REPLACEABLE LIGHT SOURCES ON BASIS OF LIGHT-EMITTING DIODE TECHNOLOGIES

    Directory of Open Access Journals (Sweden)

    S. Sernov

    2012-01-01

    Full Text Available The paper contains information on the current state of automotive lighting equipment. Different designs of automotive lighting devices, their merits and demerits are described in the paper. The paper includes a substantiation of expediency of developing light-emitting diode lighting and proposes recommendations about optimization of their design.

  5. Surface Plasmon Enhanced Phosphorescent Organic Light Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Guillermo Bazan; Alexander Mikhailovsky

    2008-08-01

    The objective of the proposed work was to develop the fundamental understanding and practical techniques for enhancement of Phosphorescent Organic Light Emitting Diodes (PhOLEDs) performance by utilizing radiative decay control technology. Briefly, the main technical goal is the acceleration of radiative recombination rate in organometallic triplet emitters by using the interaction with surface plasmon resonances in noble metal nanostructures. Increased photonic output will enable one to eliminate constraints imposed on PhOLED efficiency by triplet-triplet annihilation, triplet-polaron annihilation, and saturation of chromophores with long radiative decay times. Surface plasmon enhanced (SPE) PhOLEDs will operate more efficiently at high injection current densities and will be less prone to degradation mechanisms. Additionally, introduction of metal nanostructures into PhOLEDs may improve their performance due to the improvement of the charge transport through organic layers via multiple possible mechanisms ('electrical bridging' effects, doping-like phenomena, etc.). SPE PhOLED technology is particularly beneficial for solution-fabricated electrophosphorescent devices. Small transition moment of triplet emitters allows achieving a significant enhancement of the emission rate while keeping undesirable quenching processes introduced by the metal nanostructures at a reasonably low level. Plasmonic structures can be introduced easily into solution-fabricated PhOLEDs by blending and spin coating techniques and can be used for enhancement of performance in existing device architectures. This constitutes a significant benefit for a large scale fabrication of PhOLEDs, e.g. by roll-to-roll fabrication techniques. Besides multieexciton annihilation, the power efficacy of PhOLEDs is often limited by high operational bias voltages required for overcoming built-in potential barriers to injection and transport of electrical charges through a device. This problem is

  6. Large magnetic field effects in electrochemically doped organic light-emitting diodes

    Science.gov (United States)

    van Reenen, S.; Kersten, S. P.; Wouters, S. H. W.; Cox, M.; Janssen, P.; Koopmans, B.; Bobbert, P. A.; Kemerink, M.

    2013-09-01

    Large negative magnetoconductance (MC) of ˜12% is observed in electrochemically doped polymer light-emitting diodes at sub-band-gap bias voltages (Vbias). Simultaneously, a positive magnetoefficiency (Mη) of 9% is observed at Vbias = 2 V. At higher bias voltages, both the MC and Mη diminish while a negative magnetoelectroluminescence (MEL) appears. The negative MEL effect is rationalized by triplet-triplet annihilation that leads to delayed fluorescence, whereas the positive Mη effect is related to competition between spin mixing and exciton formation leading to an enhanced singlet:triplet ratio at nonzero magnetic field. The resultant reduction in triplet exciton density is argued to reduce detrapping of polarons in the recombination zone at low-bias voltages, explaining the observed negative MC. Regarding organic magnetoresistance, this study provides experimental data to verify existing models describing magnetic field effects in organic semiconductors, which contribute to better understanding hereof. Furthermore, we present indications of strong magnetic field effects related to interactions between trapped carriers and excitons, which specifically can be studied in electrochemically doped organic light-emitting diodes (OLEDs). Regarding light-emitting electrochemical cells (LECs), this work shows that delayed fluorescence from triplet-triplet annihilation substantially contributes to the electroluminescence and the device efficiency.

  7. Growth and properties of wide spectral white light emitting diodes

    Institute of Scientific and Technical Information of China (English)

    Xie Zi-Li; Shi Yi; Zheng You-Dou; Zhang Rong; Fu De-Yi; Liu Bin; Xiu Xiang-Qian; Hua Xue-Mei; Zhao Hong; Chen Peng; Han Ping

    2011-01-01

    Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system.Three quantum wells with blue-light-emitting,green-light-emitting and red-light-emitting structures were grown according to the design.The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells.The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region.The room temperature photolumineecence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained.The light spectrum covers 400-700 nm,which is almost the whole visible light spectrum.

  8. Toward inkjet printing of small molecule organic light emitting diodes

    NARCIS (Netherlands)

    Gorter, H.; Coenen, M.J.J.; Slaats, M.W.L.; Ren, M.; Lu, W.; Kuijpers, C.J.; Groen, W.A.

    2013-01-01

    Thermal evaporation is the current standard for the manufacture of small molecule organic light emitting diodes (smOLEDs), but it requires vacuum process, complicated shadow masks and is inefficient in material utilization, resulting in high cost of ownership. As an alternative, wet solution deposit

  9. Light Converting Inorganic Phosphors for White Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Chiao-Wen Yeh

    2010-03-01

    Full Text Available White light-emitting diodes (WLEDs have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV LEDs and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED or polymer light-emitting diode (PLED, have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450-480 nm and nUV (380-400 nm LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+ is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

  10. Organic light emitting diodes with spin polarized electrodes

    NARCIS (Netherlands)

    Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

    2003-01-01

    Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of e

  11. The Light-Emitting Diode as a Light Detector

    Science.gov (United States)

    Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

    2011-01-01

    A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

  12. Toward inkjet printing of small molecule organic light emitting diodes

    NARCIS (Netherlands)

    Gorter, H.; Coenen, M.J.J.; Slaats, M.W.L.; Ren, M.; Lu, W.; Kuijpers, C.J.; Groen, W.A.

    2013-01-01

    Thermal evaporation is the current standard for the manufacture of small molecule organic light emitting diodes (smOLEDs), but it requires vacuum process, complicated shadow masks and is inefficient in material utilization, resulting in high cost of ownership. As an alternative, wet solution deposit

  13. Theory Promises Brighter Perspective for Polymeric Light-Emitting-Diodes

    Institute of Scientific and Technical Information of China (English)

    2004-01-01

    @@ A new take on the theory of light-emitting polymers suggests that their efficiency can be largely increased, a development that would boost the introduction of flexible displays and possibly reduce the cost of flat panel displays which currently depend on very expansive materials.

  14. Tuning the colour of white polymer light emitting diodes

    NARCIS (Netherlands)

    Kok, M.M. de; Sarfert, W.; Paetzold, R.

    2010-01-01

    Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

  15. Operation of AC Adapters Visualized Using Light-Emitting Diodes

    Science.gov (United States)

    Regester, Jeffrey

    2016-01-01

    A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

  16. Tuning the colour of white polymer light emitting diodes

    NARCIS (Netherlands)

    Kok, M.M. de; Sarfert, W.; Paetzold, R.

    2010-01-01

    Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

  17. Fabrication of multipoint light emitting optical fibers for optogenetics

    Science.gov (United States)

    Sileo, Leonardo; Pisanello, Marco; De Vittorio, Massimo; Pisanello, Ferruccio

    2015-03-01

    Multipoint Light Emitting Optical Fibers (MPF) has been recently demonstrated as a versatile tool for spatially addressable optogenetics experiments. Their fabrication has been possible thanks to a number of key microfabrication technologies, in particular the unique nanofabrication capabilities of a Focused Ion Beam. This work provides the complete description of MPF fabrication, detailing the optimization process for each fabrication step.

  18. Molecular hosts for triplet emitters in organic light-emitting diodes and the corresponding working principle

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    This paper summarizes the mechanism and routes for excitation of triplet emitters in dopant emission based phosphorescent organic light-emitting diodes (PhOLEDs),providing a comprehensive overview of recent progress in molecular hosts for triplet emitters in PhOLEDs.Particularly,based on the nature of different hosts,e.g.,hole transporting,electron transporting or bipolar materials,in which the dopant emitters can be hosted to generate phosphorescence,the respective device performances are summarized and compared.Highlights are given to the relationships among the molecular structure,thermal stability,triplet energy,carrier mobility,molecular orbital energy level and their corresponding device performances.

  19. Light-emitting diodes for solid-state lighting: searching room for improvements

    Science.gov (United States)

    Karpov, Sergey Y.

    2016-03-01

    State-of-the art light-emitting diodes (LEDs) for solid-state lighting (SSL) are reviewed with the focus on their efficiency and ways for its improvement. Mechanisms of the LED efficiency losses are considered on the heterostructure, chip, and device levels, including high-current efficiency droop, recombination losses, "green gap", current crowding, Stokes losses, etc. Materials factors capable of lowering the LED efficiency, like composition fluctuations in InGaN alloys and plastic stress relaxation in device heterostructures, are also considered. Possible room for the efficiency improvement is discussed along with advanced schemes of color mixing and LED parameters optimal for generation of high-quality white light.

  20. High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    David, Aurelien, E-mail: adavid@soraa.com; Hurni, Christophe A.; Aldaz, Rafael I.; Cich, Michael J.; Ellis, Bryan; Huang, Kevin; Steranka, Frank M.; Krames, Michael R. [Soraa Inc., 6500 Kaiser Dr., Fremont, California 94555 (United States)

    2014-12-08

    We report on the light extraction efficiency of III-Nitride violet light-emitting diodes with a volumetric flip-chip architecture. We introduce an accurate optical model to account for light extraction. We fabricate a series of devices with varying optical configurations and fit their measured performance with our model. We show the importance of second-order optical effects like photon recycling and residual surface roughness to account for data. We conclude that our devices reach an extraction efficiency of 89%.

  1. Flexible organic light-emitting diodes with poly-3,4-ethylenedioxythiophene as transparent anode

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The flexible oragnic light-emitting diodes (OLEDs) fabricated on poly-3,4-ethylenedioxythiophene/poly- styrenesulfonate (PEDOT/PSS) coated substrates were demonstrated. How the fabricating processes and the device structure will affect the device performance was studied and the atomic force microscopy was employed to analyze the mophorlogy of the conducting polymer anode. Under optimized conditions, flexible OLEDs with PEDOT anode showed the brightness up to 2760 cd/m2 and maximum external quantum efficiency of 1.4%. These data are comparable to those of conventional flexible OLEDs with ITO anode.

  2. Towards developing a tandem of organic solar cell and light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [School of Engineering and IT, B-purple-12, Faculty of EHS, Charles Darwin University, Darwin, NT 0909 (Australia)

    2011-01-15

    It is proposed here to design a tandem of organic solar cell (OSC) and white organic light emitting diode (WOLED) which can generate power in the day time from the sun and provide lighting at night. With the advancement of chemical technology, such device is expected to be very-cost effective and reasonably efficient. A device thus fabricated has the potential of meeting the world's sustainable domestic and commercial power and lighting needs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Hybrid Lead Halide Perovskites for Ultrasensitive Photoactive Switching in Terahertz Metamaterial Devices.

    Science.gov (United States)

    Manjappa, Manukumara; Srivastava, Yogesh Kumar; Solanki, Ankur; Kumar, Abhishek; Sum, Tze Chien; Singh, Ranjan

    2017-08-01

    The recent meteoric rise in the field of photovoltaics with the discovery of highly efficient solar-cell devices is inspired by solution-processed organic-inorganic lead halide perovskites that exhibit unprecedented light-to-electricity conversion efficiencies. The stunning performance of perovskites is attributed to their strong photoresponsive properties that are thoroughly utilized in designing excellent perovskite solar cells, light-emitting diodes, infrared lasers, and ultrafast photodetectors. However, optoelectronic application of halide perovskites in realizing highly efficient subwavelength photonic devices has remained a challenge. Here, the remarkable photoconductivity of organic-inorganic lead halide perovskites is exploited to demonstrate a hybrid perovskite-metamaterial device that shows extremely low power photoswitching of the metamaterial resonances in the terahertz part of the electromagnetic spectrum. Furthermore, a signature of a coupled phonon-metamaterial resonance is observed at higher pump powers, where the Fano resonance amplitude is extremely weak. In addition, a low threshold, dynamic control of the highly confined electric field intensity is also observed in the system, which could tremendously benefit the new generation of subwavelength photonic devices as active sensors, low threshold optically controlled lasers, and active nonlinear devices with enhanced functionalities in the infrared, optical, and the terahertz parts of the electromagnetic spectrum. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. An Alkane-Soluble Dendrimer as Electron-Transport Layer in Polymer Light-Emitting Diodes.

    Science.gov (United States)

    Zhong, Zhiming; Zhao, Sen; Pei, Jian; Wang, Jian; Ying, Lei; Peng, Junbiao; Cao, Yong

    2016-08-10

    Polymer light-emitting diodes (PLEDs) have attracted broad interest due to their solution-processable properties. It is well-known that to achieve better performance, organic light-emitting diodes require multilayer device structures. However, it is difficult to realize multilayer device structures by solution processing for PLEDs. Because most semiconducting polymers have similar solubility in common organic solvents, such as toluene, xylene, chloroform, and chlorobenzene, the deposition of multilayers can cause layers to mix together and damage each layer. Herein, a novel semiorthogonal solubility relationship was developed and demonstrated. For the first time, an alkane-soluble dendrimer is utilized as the electron-transport layer (ETL) in PLEDs via a solution-based process. With the dendrimer ETL, the external quantum efficiency increases more than threefold. This improvement in the device performance is attributed to better exciton confinement, improved exciton energy transfer, and better charge carrier balance. The semiorthogonal solubility provided by alkane offers another process dimension in PLEDs. By combining them with water/alcohol-soluble polyelectrolytes, more exquisite multilayer devices can be fabricated to achieve high device performance, and new device structures can be designed and realized.

  5. Effect of the solvent used for fabrication of perovskite films by solvent dropping on performance of perovskite light-emitting diodes.

    Science.gov (United States)

    Yu, Jae Choul; Kim, Dae Woo; Kim, Da Bin; Jung, Eui Dae; Lee, Ki-Suk; Lee, Sukbin; Nuzzo, Daniele Di; Kim, Ji-Seon; Song, Myoung Hoon

    2017-02-02

    Organic-inorganic hybrid perovskites have emerged as a next-generation candidate for light-emitting device applications due to their excellent optical and electrical properties with narrow band emission compared to organic emitters. The morphological control of perovskite films with full surface coverage and few defect sites is essential for achieving highly efficient perovskite light-emitting diodes (PeLEDs). Here, we obtain a highly uniform perovskite film with a remarkably reduced number of defect sites in a perovskite crystal using chlorobenzene dropping. This effort leads to the enhanced performance of PeLEDs with a CH3NH3PbBr3 film using chlorobenzene dropping with a maximum luminance of 14 460 cd m(-2) (at 3.8 V) and a maximum external quantum efficiency (EQE) of 0.71% (at 2.8 V). This research confirms that the role of the solvent in the solvent dropping method is to fabricate a dense and uniform perovskite film and to passivate the defect sites of the perovskite crystal films.

  6. Approaches to hybrid synthetic devices

    Science.gov (United States)

    Verma, Vivek

    All living creatures are made up of cells that have the ability to replicate themselves in a repetitive process called cell division. As these cells mature and divide into two there is an extensive movement of cellular components. In order to perform this essential task that sustains life, cells have evolved machines composed of proteins. Biological motors, such as kinesin, transport intracellular cargo and position organelles in eukaryotic cells via unidirectional movement on cytoskeletal tracts called microtubules. Biomolecular motor proteins have the potential to be used as 'nano-engines' for switchable devices, directed self assembly, controlled bioseparations and powering nano- and microelectromechanical systems. However, engineering such systems requires fabrication processes that are compatible with biological materials such as kinesin motor proteins and microtubules. The first objective of the research was to establish biocompatibility between protein systems and nanofabrication. The second objective was to use current micro- and nanofabrication techniques for patterning proteins at specific locations and to study role of casein in supporting the operation of surface bound kinesin. The third objective was to link kinesin and microtubule system to cellulose nanowhiskers. The effects of micro- and nanofabrication processing chemicals and resists on the functionality of casein, kinesin, and microtubule proteins are systematically examined to address the important missing link of the biocompatibility of micro- and nanofabrication processes needed to realize hybrid system fabrication. It was found that both casein, which is used to prevent motor denaturation on surfaces, and kinesin motors are surprisingly tolerant of most of the processing chemicals examined. Microtubules, however, are much more sensitive. Exposure to the processing chemicals leads to depolymerization, which is partially attributed to the pH of the solutions examined. When the chemicals were

  7. Light emitting conjugated polymers for use in biological detection platforms

    Science.gov (United States)

    Gaylord, Brent S.

    Recent interest in conjugated polymers has grown from their demonstrated utility in various "plastic" and/or "molecular" electronic applications to include organic light emitting diodes (OLED's), thin film transistors and photovoltaics. Due to their intrinsically delocalized electronic structure, these same materials show enormous potential as highly responsive optical reporters for chemical and biological interactions. Inter- and intra-chain energy migration, coupled with the formation of strong electrostatic complexes between opposite charged acceptors, allows for extraordinary modulation of their fluorescent response. When these properties are correlated with a specific biological recognition event, the result is a biosensor with optically enhanced or amplified performance. Such features are highly desirable in detection schemes where the target analyte is in limited supply, as is most often the case. Within these studies we demonstrate how variations in test media composition (i.e. surfactant, buffers, proteins, DNA, etc.) and molecular structure influence those photophysical properties of conjugated polymers related to biosensor design. To this end, both anionic polyphenylenevinylene (PPV) and cationic polyfluorene-cophenylene structures were examined. Model oligomer structures were employed throughout the study for delineating structure-property relationships, as such detailed correlation is inherently more difficult for the less defined polymeric structures (i.e. polydispersity, batch-to-batch variation, purity, etc.). Studies using light scattering and optical spectroscopy highlight the extensive aggregation of these fluorescent, amphiphilic polyelectrolytes in aqueous solution. Variations in chromophore size, charge and concentration provide interesting comparisons in quenching and/or energy transfer processes, as well as, in their interactions with biological molecules. Ultimately, this information was utilized to develop a novel platform for highly

  8. White light emitting diodes realized by using an active packaging method with CdSe/ZnS quantum dots dispersed in photosensitive epoxy resins

    Science.gov (United States)

    Wang, Hao; Lee, Kyu-Seung; Ryu, Jae-Hyoung; Hong, Chang-Hee; Cho, Yong-Hoon

    2008-04-01

    White light emitting diodes (LEDs) have been realized using the active packaging (AP) method. The starting materials were bare InGaN LED chips and CdSe/ZnS core-shell quantum dots (QDs) dispersed in photosensitive epoxy resins. Such hybrid LED devices were fabricated using QD mixtures with one ('single'), two ('dual') or four ('multi') emission wavelengths. The AP method allows for convenient adjustment of multiple parameters such as the CIE-1931 coordinate (x, y), color temperature, and color rending index (CRI). All samples show good white balance, and under a 20 mA working current the luminous efficacies of the single, dual, and multi hybrid devices were 8.1 lm W-1, 5.1 lm W-1, and 6.4 lm W-1, respectively. The corresponding quantum efficiencies were 4.1%, 3.1%, and 3.1%; the CRIs were 21.46, 43.76, and 66.20; and the color temperatures were 12 000, 8190, and 7740 K. This shows that the CRI of the samples can be enhanced by broadening the QD emission band, as is exemplified by the 21.46 CRI of the single hybrid LED compared to the 66.20 value for the multi hybrid LED. In addition, we were able to increase the CRI of the single hybrid LED from 15.31 to 32.50 by increasing the working currents from 1 to 50 mA.

  9. Emissive ZnO-graphene quantum dots for white-light-emitting diodes.

    Science.gov (United States)

    Son, Dong Ick; Kwon, Byoung Wook; Park, Dong Hee; Seo, Won-Seon; Yi, Yeonjin; Angadi, Basavaraj; Lee, Chang-Lyoul; Choi, Won Kook

    2012-05-27

    Hybrid nanostructures combining inorganic materials and graphene are being developed for applications such as fuel cells, batteries, photovoltaics and sensors. However, the absence of a bandgap in graphene has restricted the electrical and optical characteristics of these hybrids, particularly their emissive properties. Here, we use a simple solution method to prepare emissive hybrid quantum dots consisting of a ZnO core wrapped in a shell of single-layer graphene. We then use these quantum dots to make a white-light-emitting diode with a brightness of 798 cd m(-2). The strain introduced by curvature opens an electronic bandgap of 250 meV in the graphene, and two additional blue emission peaks are observed in the luminescent spectrum of the quantum dot. Density functional theory calculations reveal that these additional peaks result from a splitting of the lowest unoccupied orbitals of the graphene into three orbitals with distinct energy levels. White emission is achieved by combining the quantum dots with other emissive materials in a multilayer light-emitting diode.

  10. Charge injection and accumulation in organic light-emitting diode with PEDOT:PSS anode

    Energy Technology Data Exchange (ETDEWEB)

    Weis, Martin, E-mail: martin.weis@stuba.sk [Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 81219 (Slovakia); Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@ome.pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-04-21

    Organic light-emitting diode (OLED) displays using flexible substrates have many attractive features. Since transparent conductive oxides do not fit the requirements of flexible devices, conductive polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative. The charge injection and accumulation in OLED devices with PEDOT:PSS anodes are investigated and compared with indium tin oxide anode devices. Higher current density and electroluminescence light intensity are achieved for the OLED device with a PEDOT:PSS anode. The electric field induced second-harmonic generation technique is used for direct observation of temporal evolution of electric fields. It is clearly demonstrated that the improvement in the device performance of the OLED device with a PEDOT:PSS anode is associated with the smooth charge injection and accumulation.

  11. Tunable high-refractive index hybrid for solution-processed light management devices (Conference Presentation)

    Science.gov (United States)

    Bachevillier, Stefan

    2016-10-01

    After the use of highly efficient but expensive inorganic optical materials, solution-processable polymers and hybrids have drawn more and more interest. Our group have recently developed a novel polymer-based hybrid optical material from titanium oxide hydrate exhibiting an outstanding set of optical and material properties. Firstly, their low cost, processability and cross-linked states are particularly attractive for many applications. Moreover, a high refractive index can be repeatedly achieved while optical losses stays considerably low over the entire visible and near-infrared wavelength regime. Indeed, the formation of inorganic nanoparticles, usually present in nanocomposites, is avoided by a specific formulation process. Even more remarkably, the refractive index can be tuned by either changing the inorganic content, using different titanium precursors or via a low-temperature curing process. A part of our work is focused on the reliable optical characterization of these properties, in particular a microscope-based setup allowing in-situ measurement and sample mapping has been developed. Our efforts are also concentrated on various applications of these exceptional properties. This hybrid material is tailored for photonic devices, with a specific emphasis on the production of highly efficient solution processable Distributed Bragg Reflectors (DBR) and anti-reflection coatings. Furthermore, waveguides can be fabricated from thin films along with in-coupling and out-coupling structures. These light managements structures are particularly adapted to organic photovoltaic cells (OPVs) and light emitting diodes (OLEDs).

  12. Light-emitting diodes in dermatology: stimulation of wound healing

    Directory of Open Access Journals (Sweden)

    Justyna Fryc

    2016-05-01

    Full Text Available Low-level light therapy (LLLT, which is sometimes included in phototherapy, is an effective therapeutic strategy to improve wound healing and reduce pain, inflammation and swelling. Nowadays, new sources of light, such as light-emitting diodes (LEDs with a broad range of wavelengths, are widely available. The biological effects promoted by LEDs are dependent on irradiation parameters, mainly wavelength and dose. This review article focuses on recent clinical trials using light-emitting diode low-level light therapy (LED-LLLT for enhancing wound healing. In this article, we also cover the mechanisms of action of LLLT on cells and tissues and highlight the importance of defining optimum LLLT parameters for stimulation of wound healing.

  13. High extraction efficiency ultraviolet light-emitting diode

    Science.gov (United States)

    Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

    2015-11-24

    Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (efficiently inject carriers in all the QWs, are preferred.

  14. Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure

    Science.gov (United States)

    Riuttanen, L.; Kivisaari, P.; Svensk, O.; Vasara, T.; Myllys, P.; Oksanen, J.; Suihkonen, S.

    2015-03-01

    Due to their potential to improve the performance of light-emitting diodes (LEDs), novel device structures based on nanowires, surface plasmons, and large-area high-power devices have received increasing amount of interest. These structures are almost exclusively based on the double hetero junction (DHJ) structure, that has remained essentially unchanged for decades. In this work we study a III-nitride diffusion injected light-emitting diode (DILED), in which the active region is located outside the pn-junction and the excitation of the active region is based on bipolar diffusion of charge carriers. This unorthodox approach removes the need of placing the active region in the conventional current path and thus enabling carrier injection in device structures, which would be challenging to realize with the conventional DHJ design. The structure studied in this work is has 3 indium gallium nitride / gallium nitride (InGaN/GaN) quantum wells (QWs) under a GaN pn-junction. The QWs are grown at diferent growth temperatures for obtaining distinctive luminescence peaks. This allows to obtain knowledge on the carrier diffusion in the structure. When the device is biased, all QWs emit light indicating a significant diffusion current into the QW stack.

  15. A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

    KAUST Repository

    Al-Saggaf, Abeer

    2015-05-01

    The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

  16. Stacking multiple connecting functional materials in tandem organic light-emitting diodes

    Science.gov (United States)

    Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

    2017-01-01

    Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency. PMID:28225028

  17. Light-emitting diode technology in vitreoretinal surgery.

    Science.gov (United States)

    Dithmar, Stefan; Hoeh, Alexandra E; Amberger, Roman; Ruppenstein, Mira; Ach, Thomas

    2011-05-01

    Systems for vitreoretinal illumination during surgery usually consist of an external light source and a light fiber. We introduce a new illumination system for vitreoretinal surgery based on the light-emitting diode technology, with an embedded light source in the handle of the light fiber, making a separate light source unnecessary. A prototype of a new illumination system for vitreoretinal surgery (ocuLED; Geuder, Heidelberg, Germany) was tested. This system consists of a handle with a built-in light-emitting diode, supported by an external power source. The OcuLED was analyzed in regards to wavelength, maximum radiant power, and maximum irradiance and was compared with three commercially available vitreoretinal illumination systems. Furthermore, the first intraoperative application and handling were evaluated. The ocuLED system works with a cool white or a neutral white light-emitting diode and is powered externally. The wavelength spectrum shows a maximum at 565 nm and a second peak at 455 nm. Compared with other light sources, the proportion of potentially harmful blue light is low. Maximum radiant power and irradiance are in line with xenon and mercury vapor light sources. The intrasurgical light is bright and offers good visibility. The handle of ocuLED is slightly wider than commonly used light fiber handles, which do not affect its use during surgery. Technical progress in light-emitting diode technology allows minimizing the equipment for vitreoretinal illumination. The OcuLED provides bright illumination without an external light source. Wavelength spectrum, maximum radiant power, and irradiance are safe from the risk of phototoxic damage. Intrasurgical handling is identical to conventional light fibers.

  18. Wide Area Thermal Processing of Light Emitting Materials

    Energy Technology Data Exchange (ETDEWEB)

    Duty, Chad E [ORNL; Joshi, Pooran C [ORNL; Jellison Jr, Gerald Earle [ORNL; Angelini, Joseph Attilio [ORNL; Sabau, Adrian S [ORNL

    2011-10-01

    Laboratory laser materials synthesis of wide bandgap materials has been successfully used to create white light emitting materials (LEMs). This technology development has progressed to the exploration on design and construction of apparatus for wide area doping and phase transformation of wide bandgap material substrates. The objective of this proposal is to develop concepts for wide area doping and phase transformation based on AppliCote Associates, LLC laser technology and ORNL high density pulsed plasma arc technology.

  19. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED)

    OpenAIRE

    Andre F. S. Guedes; Vilmar P. Guedes; Simone Tartari; Mônica L. Souza; Idaulo J. Cunha

    2014-01-01

    The development of Organic Light Emitting Diode (OLED), using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene), PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis), Optical Parameters (OP) and Scanning Electron Microscopy (SEM). In addition,...

  20. CRITICAL ASSESSMENT: Gallium nitride based visible light emitting diodes

    OpenAIRE

    Oliver, Rachel A.

    2016-01-01

    This is the author accepted manuscript. It is currently under an indefinite embargo pending publication by Maney Publishing. Solid state lighting based on light-emitting diodes (LEDs) is a technology with the potential to drastically reduce energy usage, made possible by the development of gallium nitride and its alloys. However, the nitride materials family exhibits high defect densities and, in the equilibrium wurtzite crystal phase, large piezo-electric and polarisation fields arising a...

  1. Fabrication of natural DNA-containing organic light emitting diodes

    Science.gov (United States)

    Gomez, Eliot F.; Spaeth, Hans D.; Steckl, Andrew J.; Grote, James G.

    2011-09-01

    The process of creating natural DNA-containing bio-organic light emitting diodes is a fascinating journey from salmon fish to the highly-efficient BiOLED. DNA from salmon sperm is used as a high-performance electron blocking layer, to enhance the efficiency of the BiOLED over its conventional OLED counterpart. An overview of the BiOLED fabrication process and its key steps are presented in this paper.

  2. Light emitting polymers on flexible substrates for Naval firefighting applications

    OpenAIRE

    Brisar, Jon David

    2005-01-01

    Approved for public release, distribution is unlimited Display technologies in the current market range from the simple and cheap incandescent bulb behind a graphic overlay to the upwardly expensive flat panel high definition plasma display. To provide a foundation of understanding for Light Emitting Polymers (LEP), samples were imaged in a scanning electron microscope. This was preformed to identify a potential method for answering questions on polymer charge mobility and diffusion mechan...

  3. Study on electroluminescence from porous silicon light-emitting diode

    Institute of Scientific and Technical Information of China (English)

    Yajun Yang; Qingshan Li; Xianyun Liu

    2006-01-01

    @@ Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.

  4. Active targeting of tumor cells using light emitting bacteria

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Sung Min; Min, Jung Joon; Hong, Yeong Jin; Kim, Hyun Ju; Le, Uuenchi N.; Rhee, Joon Haeng; Song, Ho Chun; Heo, Young Jun; Bom, Hee Seung; Choy, Hyon E [School of Medicine, Chonnam National University, Gwangju (Korea, Republic of)

    2004-07-01

    The presence of bacteria and viruses in human tumors has been recognized for more than 50 years. Today, with the discovery of bacterial strains that specifically target tumors, and aided by genomic sequencing and genetic engineering, there is new interest in the use of bacteria as tumor vectors. Here, we show that bacteria injected intravenously into live animals entered and replicated in solid tumors and metastases using the novel imaging technology of biophotonics. Bioluminescence operon (LuxCDABE) or fluorescence protein, GFP) has been cloned into pUC19 plasmid to engineer pUC19lux or pUC19gfp. Engineered plasmid was transformed into different kinds of wild type (MG1655) or mutant E. coli (DH5, ppGpp, fnr, purE, crpA, flagella, etc.) strains to construct light emitting bacteria. Xenograft tumor model has been established using CT26 colon cancer cell line. Light emitting bacteria was injected via tail vein into tumor bearing mouse. In vivo bioluminescence imaging has been done after 20 min to 14 days of bacterial injection. We observed localization of tumors by light-emitting E. coli in tumor (CT-26) bearing mice. We confirmed the presence of light-emitting bacteria under the fluorescence microscope with E. coli expressing GFP. Althoug varying mutants strain with deficient invading function has been found in tumor tissues, mutant strains of movement (flagella) couldn't show any light signal from the tumor tissue under the cooled CCD camera, indicating bacteria may actively target the tumor cells. Based on their 'tumor-finding' nature, bacteria may be designed to carry multiple genes or drugs for detection and treatment of cancer, such as prodrug-converting enzymes, toxins, angiogenesis inhibitors and cytokines.

  5. Employment of gold-coated silver nanowires as transparent conductive electrode for organic light emitting diodes

    Science.gov (United States)

    Kim, Sunho; Kim, Bongsung; Im, Inseob; Kim, Dongjae; Lee, Haeseong; Nam, Jaewook; Chung, Ho Kyoon; Lee, Hoo-Jeong; Cho, Sung Min

    2017-08-01

    This study proposes a simple method of Au coating on silver nanowires (Ag NWs) transparent conductive films as the anode of organic light emitting diodes (OLED) to increase the work function of the film and thus enhance hole transport. We carefully engineer the process conditions (pretreatment, solution concentrations, and coating number) of the coating using a diluted HAuCl4 solution on the Ag NWs film to minimize etching damage on Ag NWs accompanying the galvanic replacement reaction. Ultraviolet photoelectron spectroscopy and Kelvin probe force microscopy show work function increase of Ag NWs upon Au coating. OLED devices based on Au-coated Ag NWs show a lower turn-on voltage and higher luminance, compared with pristine Ag NWs device. Although the Ag NWs device displays poor efficiencies in the low luminance range due to a high leakage, some of the Au-coated Ag NWs devices showed efficiencies higher than those of the ITO device in a high luminance.

  6. Patterning of flexible organic light emitting diode (FOLED) stack using an ultrafast laser.

    Science.gov (United States)

    Mandamparambil, Rajesh; Fledderus, Henri; Van Steenberge, Geert; Dietzel, Andreas

    2010-04-12

    A femtosecond laser has been successfully utilized for patterning thin Flexible Organic Light Emitting Diode (FOLED) structures of individual layer thickness around 100nm. The authors report in this paper a step-like ablation behavior at the layer interfaces which accounts for a local removal of entire layers. Various surface analyzing techniques are used to investigate the morphologies and chemical compositions within and in the vicinity of the ablation areas. This study opens a new avenue in selectively ablating different layers from a multilayer stack on flexible substrates using fs lasers allowing post deposition structuring of large area flexible organic electronic devices.

  7. Fluorescent SiC and its application to white light-emitting diodes*

    Institute of Scientific and Technical Information of China (English)

    Satoshi Kamiyama; Motoaki Iwaya; Tetsuya Takeuchi; Isamu Akasaki; Mikael Syv(a)j(a)rvi; Rositza Yakimova

    2011-01-01

    Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations,has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination.This material can be used as a substrate for a nearUV light-emitting diode (LED) stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.

  8. Room temperature spin relaxation length in spin light-emitting diodes

    Science.gov (United States)

    Soldat, Henning; Li, Mingyuan; Gerhardt, Nils C.; Hofmann, Martin R.; Ludwig, Arne; Ebbing, Astrid; Reuter, Dirk; Wieck, Andreas D.; Stromberg, Frank; Keune, Werner; Wende, Heiko

    2011-08-01

    We investigate the spin relaxation length in GaAs spin light-emitting diode devices under drift transport at room temperature. The spin-polarised electrons are injected through a MgO tunnel barrier from a Fe/Tb multilayer in magnetic remanence. The decrease in circular polarization with increasing injection path length is investigated and found to be exponential, supporting drift-based transport. The spin relaxation length in our samples is 26 nm, and a lower bound for the spin injection efficiency at the spin injector/GaAs interface is estimated to be 25 ± 2%.

  9. Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    P. J. Carrington

    2011-01-01

    Full Text Available Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.

  10. Conjugated polymers and their use in optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

    2016-10-18

    The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  11. PEDOT:PSS/Graphene Nanocomposite Hole-Injection Layer in Polymer Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Chun-Hsuan Lin

    2012-01-01

    Full Text Available We report on effects of doping graphene in poly(3,4-ethylenedioxythiophene: poly(styrene sulfonate, PEDOT:PSS, as a PEDOT:PSS/graphene nanocomposite hole injection layer on the performance enhancement of polymer light-emitting diodes (PLEDs. Graphene oxides were first synthesized and then mixed in the PEDOT:PSS solution with specifically various amounts. Graphenes were reduced in the PEDOT:PSS matrix through thermal reduction. PLED devices with hole-injection nanocomposite layer containing particular doping concentration were fabricated, and the influence of doping concentration on device performance was examined by systematically characterizations of various device properties. Through the graphene doping, the resistance in the hole-injection layer and the turn-on voltage could be effectively reduced that benefited the injection and transport of holes and resulted in a higher overall efficiency. The conductivity of the hole-injection layer was monotonically increased with the increase of doping concentration, performance indices from various aspects, however, did not show the same dependence because faster injected holes might alter not only the balance of holes and electrons but also their combination locations in the light-emitting layer. Results show that optimal doping concentration was the case with 0.03 wt% of graphene oxide.

  12. Plasmonic Perovskite Light-Emitting Diodes Based on the Ag-CsPbBr3 System.

    Science.gov (United States)

    Zhang, Xiaoli; Xu, Bing; Wang, Weigao; Liu, Sheng; Zheng, Yuanjin; Chen, Shuming; Wang, Kai; Sun, Xiao Wei

    2017-02-08

    The enhanced luminescence through semiconductor-metal interactions suggests the great potential of device performance improvement via properly tailored plasmonic nanostructures. Surface plasmon enhanced electroluminescence in an all-inorganic CsPbBr3 perovskite light-emitting diode (LED) is fabricated by decorating the hole transport layer with the synthesized Ag nanorods. An increase of 42% and 43.3% in the luminance and efficiency is demonstrated for devices incorporated with Ag nanorods. The device with Ag introduction indicates identical optoelectronic properties to the controlled device without Ag nanostructures. The increased spontaneous emission rate caused by the Ag-induced plasmonic near-field effect is responsible for the performance enhancement. Therefore, the plasmonic Ag-CsPbBr3 nanostructure studied here provides a novel strategy on the road to the future development of perovskite LEDs.

  13. Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

    Science.gov (United States)

    Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

    2016-07-21

    Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

  14. Characterizing Ion Profiles in Dynamic Junction Light-Emitting Electrochemical Cells

    Energy Technology Data Exchange (ETDEWEB)

    Shoji, Tyko D.; Zhu, Zihua; Leger, Janelle M.

    2013-11-27

    Organic semiconductors have the unique ability to conduct both ionic and electronic charge carriers in thin films, an emerging advantage in applications such as light-emitting devices, transistors, and electrochromic devices, among others. Evidence suggests that the profiles of ions and electrochemical doping in the polymer film during operation significantly impact the performance and stability of the device. However, few studies have directly characterized ion profiles within LECs. Here, we present profiles of ion distributions in LECs following application of voltage, via time-of-flight secondary ion mass spectrometry. Ion distributions were characterized with regard to film thickness, salt concentration, applied voltage, and relaxation over time. Results provide insight into the correlation between ion profiles and device performance, as well as potential approaches to tuning electrochemical doping processes in LECs.

  15. Tuning the Microcavity of Organic Light Emitting Diodes by Solution Processable Polymer-Nanoparticle Composite Layers.

    Science.gov (United States)

    Preinfalk, Jan B; Schackmar, Fabian R; Lampe, Thomas; Egel, Amos; Schmidt, Tobias D; Brütting, Wolfgang; Gomard, Guillaume; Lemmer, Uli

    2016-02-01

    In this study, we present a simple method to tune and take advantage of microcavity effects for an increased fraction of outcoupled light in solution-processed organic light emitting diodes. This is achieved by incorporating nonscattering polymer-nanoparticle composite layers. These tunable layers allow the optimization of the device architecture even for high film thicknesses on a single substrate by gradually altering the film thickness using a horizontal dipping technique. Moreover, it is shown that the optoelectronic device parameters are in good agreement with transfer matrix simulations of the corresponding layer stack, which offers the possibility to numerically design devices based on such composite layers. Lastly, it could be shown that the introduction of nanoparticles leads to an improved charge injection, which combined with an optimized microcavity resulted in a maximum luminous efficacy increase of 85% compared to a nanoparticle-free reference device.

  16. 77 FR 21038 - Energy Conservation Program: Test Procedures for Light-Emitting Diode Lamps

    Science.gov (United States)

    2012-04-09

    ... Parts 429 and 430 RIN 1904-AC67 Energy Conservation Program: Test Procedures for Light-Emitting Diode... light-emitting diode (LED) lamps to support implementation of labeling provisions by the Federal Trade... procedures. This rulemaking establishes test procedures that manufacturers of light-emitting diode (LED...

  17. Ordered and ultrathin reduced graphene oxide LB films as hole injection layers for organic light-emitting diode.

    Science.gov (United States)

    Yang, Yajie; Yang, Xiaojie; Yang, Wenyao; Li, Shibin; Xu, Jianhua; Jiang, Yadong

    2014-01-01

    In this paper, we demonstrated the utilization of reduced graphene oxide (RGO) Langmuir-Blodgett (LB) films as high performance hole injection layer in organic light-emitting diode (OLED). By using LB technique, the well-ordered and thickness-controlled RGO sheets are incorporated between the organic active layer and the transparent conducting indium tin oxide (ITO), leading to an increase of recombination between electrons and holes. Due to the dramatic increase of hole carrier injection efficiency in RGO LB layer, the device luminance performance is greatly enhanced comparable to devices fabricated with spin-coating RGO and a commercial conducting polymer PEDOT:PSS as the hole transport layer. Furthermore, our results indicate that RGO LB films could be an excellent alternative to commercial PEDOT:PSS as the effective hole transport and electron blocking layer in light-emitting diode devices.

  18. The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes

    Science.gov (United States)

    Seo, Tae Hoon; Lee, Seula; Min, Kyung Hyun; Chandramohan, S.; Park, Ah Hyun; Lee, Gun Hee; Park, Min; Suh, Eun-Kyung; Kim, Myung Jong

    2016-07-01

    This paper reports a highly reliable transparent conductive electrode (TCE) that integrates silver nanowires (AgNWs) and high-quality graphene as a protecting layer. Graphene with minimized defects and large graphene domains has been successfully obtained through a facile two-step growth approach. Ultraviolet light emitting diodes (UV-LEDs) were fabricated with AgNWs or hybrid electrodes where AgNWs were combined with two-step grown graphene (A-2GE) or conventional one-step grown graphene (A-1GE). The device performance and reliability of the UV-LEDs with three different electrodes were compared. The A-2GE offered high figure of merit owing to the excellent UV transmittance and reduced sheet resistance. As a consequence, the UV-LEDs made with A-2GE demonstrated reduced forward voltage, enhanced electroluminescence (EL) intensity, and alleviated efficiency droop. The effects of joule heating and UV light illumination on the electrode stability were also studied. The present findings prove superior performance of the A-2GE under high current injection and continuous operation of UV LED, compared to other electrodes. From our observation, the A-2GE would be a reliable TCE for high power UV-LEDs.

  19. "Quasi-freestanding" graphene-on-single walled carbon nanotube electrode for applications in organic light-emitting diode.

    Science.gov (United States)

    Liu, Yanpeng; Jung, Eun; Wang, Yu; Zheng, Yi; Park, Eun Ji; Cho, Sung Min; Loh, Kian Ping

    2014-03-12

    An air-stable transparent conductive film with "quasi-freestanding" graphene supported on horizontal single walled carbon nanotubes (SWCNTs) arrays is fabricated. The sheet resistance of graphene films stacked via layer-by-layer transfer (LBL) on quartz, and modified by 1-Pyrenebutyric acid N-hydroxysuccinimide ester (PBASE), is reduced from 273 Ω/sq to about 76 Ω/sq. The electrical properties are stable to heat treatment (up to 200 ºC) and ambient exposure. Organic light-emitting diodes (OLEDs) constructed of this carbon anode (T ≈ 89.13% at 550 nm) exhibit ≈88% power efficiency of OLEDs fabricated on an ITO anode (low turn on voltage ≈3.1 eV, high luminance up to ≈29 490 cd/m(2) , current efficiency ≈14.7 cd/A). Most importantly, the entire graphene-on-SWCNT hybrid electrodes can be transferred onto plastic (PET) forming a highly-flexible OLED device, which continues to function without degradation in performance at bending angles >60°.

  20. Sticker-type ECG/PPG concurrent monitoring system hybrid integration of CMOS SoC and organic sensor device.

    Science.gov (United States)

    Lee, Yongsu; Lee, Hyeonwoo; Yoo, Seunghyup; Yoo, Hoi-Jun; Yongsu Lee; Hyeonwoo Lee; Seunghyup Yoo; Hoi-Jun Yoo; Yoo, Seunghyup; Lee, Yongsu; Yoo, Hoi-Jun; Lee, Hyeonwoo

    2016-08-01

    The sticker-type sensor system is proposed targeting ECG/PPG concurrent monitoring for cardiovascular diseases. The stickers are composed of two types: Hub and Sensor-node (SN) sticker. Low-power CMOS SoC for measuring ECG and PPG signal is hybrid integrated with organic light emitting diodes (OLEDs) and organic photo detector (OPD). The sticker has only 2g weight and only consumes 141μW. The optical calibration loop is adopted for maintaining SNR of PPG signal higher than 30dB. The pulse arrival time (PAT) and SpO2 value can be extracted from various body parts and verified comparing with the reference device from 20 people in-vivo experiments.

  1. Long-Range Energy Transfer and Singlet-Exciton Migration in Working Organic Light-Emitting Diodes

    Science.gov (United States)

    Ingram, Grayson L.; Nguyen, Carmen; Lu, Zheng-Hong

    2016-06-01

    Rapid industrialization of organic light-emitting devices for flat-panel displays and solid-state lighting makes a deep understanding of device physics more desirable than ever. Developing reliable experimental techniques to measure fundamental physical properties such as exciton diffusion lengths is a vital part of developing device physics. In this paper, we present a study of exciton diffusion and long-range energy transfer in working organic light-emitting devices, and a study of the interplay between these two tangled processes through both experimental probes and simulations. With the inclusion of multiple factors including long-range energy transfer, exciton boundary conditions, and the finite width of the exciton generation zone, we quantify exciton migration based on emission characteristics from rubrene sensing layers placed in working organic light-emitting devices. This comprehensive analysis is found to be essential to accurately measuring exciton diffusion length, and in the present case the measured singlet-exciton diffusion length in the archetype material 4' -bis(carbazol-9-yl)biphenyl is 4.3 ±0.3 nm with a corresponding diffusivity of (2.6 ±0.3 )×10-4 cm2/s .

  2. Study of electrical fatigue by defect engineering in organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Gassmann, Andrea, E-mail: gassmann@e-mat.tu-darmstadt.de [Technische Universität Darmstadt, Materials Science and Geoscience Department, Electronic Materials Division, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Yampolskii, Sergey V. [Technische Universität Darmstadt, Materials Science and Geoscience Department, Materials Modeling Division, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Klein, Andreas [Technische Universität Darmstadt, Materials Science and Geoscience Department, Surface Science Division, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Albe, Karsten [Technische Universität Darmstadt, Materials Science and Geoscience Department, Materials Modeling Division, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Vilbrandt, Nicole [Technische Universität Darmstadt, Chemistry Department, Ernst Berl Institute for Macromolecular Research, Alarich-Weiss-Str. 4, 64287 Darmstadt (Germany); Pekkola, Oili [Technische Universität Darmstadt, Materials Science and Geoscience Department, Electronic Materials Division, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Genenko, Yuri A. [Technische Universität Darmstadt, Materials Science and Geoscience Department, Materials Modeling Division, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Rehahn, Matthias [Technische Universität Darmstadt, Chemistry Department, Ernst Berl Institute for Macromolecular Research, Alarich-Weiss-Str. 4, 64287 Darmstadt (Germany); Seggern, Heinz von [Technische Universität Darmstadt, Materials Science and Geoscience Department, Electronic Materials Division, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany)

    2015-02-15

    Graphical abstract: - Highlights: • Electrical fatigue is investigated in PPV-based polymer light-emitting diodes. • Bromide defects remaining from Gilch synthesis limit PLED lifetime. • Electrical stress yields lower hole mobility and transition to dispersive transport. • Triplet excitons reduce lifetime and EL-emission-induced degradation observed. • Self-consistent drift-diffusion model for charge carrier injection and transport. - Abstract: In this work the current knowledge on the electrical degradation of polymer-based light-emitting diodes is reviewed focusing especially on derivatives of poly(p-phenylene-vinylene) (PPV). The electrical degradation will be referred to as electrical fatigue and is understood as mechanisms, phenomena and material properties that change during continuous operation of the device at constant current. The focus of this review lies especially on the effect of chemical synthesis on the transport properties of the organic semiconductor and the device lifetimes. In addition, the prominent transparent conductive oxide indium tin oxide as well as In{sub 2}O{sub 3} will be reviewed and how their properties can be altered by the processing conditions. The experiments are accompanied by theoretical modeling shining light on how the change of injection barriers, charge carrier mobility or trap density influence the current–voltage characteristics of the diodes and on how and which defects form in transparent conductive oxides used as anode.

  3. Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.

    Science.gov (United States)

    Han, Nam; Cuong, Tran Viet; Han, Min; Ryu, Beo Deul; Chandramohan, S; Park, Jong Bae; Kang, Ji Hye; Park, Young-Jae; Ko, Kang Bok; Kim, Hee Yun; Kim, Hyun Kyu; Ryu, Jae Hyoung; Katharria, Y S; Choi, Chel-Jong; Hong, Chang-Hee

    2013-01-01

    The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

  4. Effect of the structure on luminescent characteristics of SRO-based light emitting capacitors

    Science.gov (United States)

    Palacios-Huerta, L.; Cabañas-Tay, S. A.; Luna-López, J. A.; Aceves-Mijares, M.; Coyopol, A.; Morales-Sánchez, A.

    2015-10-01

    In this paper, we study the structural, optical and electro-optical properties of silicon rich oxide (SRO) films, with 6.2 (SRO30) and 7.3 at.% (SRO20) of silicon excess thermally annealed at different temperatures and used as an active layer in light emitting capacitors (LECs). A typical photoluminescence (PL) red-shift is observed as the silicon content and annealing temperature are increased. Nevertheless, when SRO30 films are used in LECs, a resistance switching (RS) behavior from a high current state (HCS) to a low conduction state (LCS) is observed, enhancing the intense blue electroluminescence (EL). This RS produces a long spectral blue-shift (˜227 nm) between the EL and PL band, and it is related to structural defects created by a high current flow through preferential conductive paths breaking off Si-Si bonds from very small silicon nanoparticles (Si-nps) (Eδ (Si ↑ Si ≡ Si) centers). LECs with SRO20 films do not present the RS behavior and only exhibit a slight shift between PL and EL, both in red spectra. The carrier transport in these LEC devices is analyzed as being trap assisted tunnelling and Poole-Frenkel through a quasi ‘continuum’ of defect traps and quantum dots for the conduction mechanism in SRO30 and SRO20 films, respectively. The results prove the feasibility of obtaining light emitting devices by using simple panel structures with Si-nps embedded in the dielectric layer.

  5. Improving the performance of MEH-PPV based light emitting diode by incorporation of graphene nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Prasad, Neetu, E-mail: neetu23686@gmail.com [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Singh, Inderpreet [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); SGTB Khalsa College, Department of Electronics, University of Delhi, Delhi 110007 (India); Kumari, Anita [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Madhwal, Devinder [Amity Institute for advanced research and studies, Amity University, UP (India); Madan, Shikha; Dixit, Shiv Kumar; Bhatnagar, P.K.; Mathur, P.C. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India)

    2015-03-15

    The effect of incorporation of graphene nanosheets on the efficiency of poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) based light emitting diodes (LED) has been examined by varying the graphene concentration from 0 to 0.1 wt%. It was observed that graphene doping enhances the photoluminescence (PL) emission from the PPV layer by ∼6 times at the blending concentration of 0.005 wt%. This is attributed to the isolation of individual polymer chains that quenches the inter-chain relaxations and boosts the intra-chain transitions. The improvement in device luminance is also found to be ∼6 times as compared to that with MEH-PPV only LED at 0.005 wt% graphene concentration. This is due to the high charge carrier mobility in graphene nanostructure that assists in balancing the charge carrier concentration in the emissive layer. Also due to its low LUMO level, graphene improves electron injection from the cathode. Both these effects lead to enhancement in the device luminescence. Employment of graphene in this manner also leads to lowering of turn-on voltage of the device. This is attributed to the ability of graphene sheets to establish an interconnected conducting network in the polymer matrix that lowers the device resistance. However, at higher graphene concentration, this property short circuits the device structure, which greatly deteriorates its performance. The graphene concentration, therefore, should be kept below the percolation threshold level to develop high efficiency devices. - Highlights: • Incorporation of graphene greatly improves the efficiency of MEH-PPV based light emitting diode. • It isolates individual polymer chain and suppresses inter-chain interaction leading to improve the luminescence. • Owing to its high carrier mobility, graphene balances the charge carrier concentration in the emissive layer. • Its low LUMO level also improves the electron injection from the cathode. • It also reduces the turn

  6. Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

    Science.gov (United States)

    Mesta, Murat; Carvelli, Marco; de Vries, Rein J.; van Eersel, Harm; van der Holst, Jeroen J. M.; Schober, Matthias; Furno, Mauro; Lüssem, Björn; Leo, Karl; Loebl, Peter; Coehoorn, Reinder; Bobbert, Peter A.

    2013-07-01

    In multilayer white organic light-emitting diodes the electronic processes in the various layers—injection and motion of charges as well as generation, diffusion and radiative decay of excitons—should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile are shown to agree well with experiment. The experimental emission profile was obtained with nanometre resolution from the measured angle- and polarization-dependent emission spectra. The simulations elucidate the crucial role of exciton transfer from green to red and the efficiency loss due to excitons generated in the interlayer between the green and blue layers. The perpendicular and lateral confinement of the exciton generation to regions of molecular-scale dimensions revealed by this study demonstrate the necessity of molecular-scale instead of conventional continuum simulation.

  7. Neodymium YAG lasers pumped by light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Bilak, V.I.; Goldobin, I.S.; Zverev, G.M.; Kuratev, I.I.; Pashkov, V.A.; Stel' makh, M.F.; Tsvetkov, Y.V.; Solov' eva, N.M.

    1981-11-01

    The results are presented of theoretical and experimental investigations of room-temperature YAG:Nd lasers pumped by light-emitting diodes. The lasing characteristics of a laser operated at the 1.06 and 1.32 ..mu.. wavelengths were investigated in the cw and pulsed regimes and dependences of its parameters on the temperature, pulse repetition frequency, and other factors were studied. In the pulsed regime the laser efficiency was 0.2% and in the cw regime the radiation power reached 50 and 17 mW at the 1.06 and 1.32 ..mu.. wavelengths, respectively.

  8. Using high-power light emitting diodes for photoacoustic imaging

    DEFF Research Database (Denmark)

    Hansen, René Skov

    The preliminary result of using a high-power light emitting diode, LED, for photoacoustic imaging is presented. The pulsed light source is created by a 1Watt red Luxeon LED. The LED delivers light pulses with 25W peak power when supplied by 40A peak, 60ns wide current pulses. The phantom used...... for the experiment consists of a 3mm high x 5mm wide slice of green colored gelatine overlaid by a 3cm layer of colorless gelatine. The light pulses from the LED is focused on the green gelatine. The photoacoustic response from the green gelatine is detected by a single transducer on the opposite (top) surface...

  9. High efficiency III-nitride light-emitting diodes

    Science.gov (United States)

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

    2013-05-28

    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  10. Light-emitting diodes - Their potential in biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Yeh, Naichia Gary; Wu, Chia-Hao [College of Applied Sciences, MingDao University, 369 Wen-Hua Road, Peetou, Changhua 52345 (China); Cheng, Ta Chih [Department of Tropical Agriculture and International Cooperation, National Pingtung University of Science and Technology, 1 Hseuh-Fu Rd., Nei-Pu Hsiang, Pingtung 91201 (China)

    2010-10-15

    The rapid development of high brightness light-emitting diodes (LEDs) makes feasible the use of LEDs, among other light sources (such as laser, intense pulse light and other incoherent light systems), for medical treatment and light therapy. This paper provides a general review on red, green, blue, ultraviolet LED applications in photo rejuvenation and medical treatments of a variety of physical abnormalities, as well as the relief of stress, circadian rhythm disorders, and seasonal affective disorder. The review, concentrated in the papers published after 1990, intends to show that LEDs are well qualified to succeed its more energy demanding counterparts in the named areas and beyond. (author)

  11. Camera vibration measurement using blinking light-emitting diode array.

    Science.gov (United States)

    Nishi, Kazuki; Matsuda, Yuichi

    2017-01-23

    We present a new method for measuring camera vibrations such as camera shake and shutter shock. This method successfully detects the vibration trajectory and transient waveforms from the camera image itself. We employ a time-varying pattern as the camera test chart over the conventional static pattern. This pattern is implemented using a specially developed blinking light-emitting-diode array. We describe the theoretical framework and pattern analysis of the camera image for measuring camera vibrations. Our verification experiments show that our method has a detection accuracy and sensitivity of 0.1 pixels, and is robust against image distortion. Measurement results of camera vibrations in commercial cameras are also demonstrated.

  12. Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy

    Science.gov (United States)

    Pynn, C. D.; Kowsz, S. J.; Oh, S. H.; Gardner, H.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P.

    2016-07-01

    The performance of multiple quantum well green and yellow semipolar light-emitting diodes (LEDs) is limited by relaxation of highly strained InGaN-based active regions and the subsequent formation of nonradiative defects. Limited area epitaxy was used to block glide of substrate threading dislocations and to reduce the density of misfit dislocations (MDs) directly beneath the active region of (20 2 ¯ 1 ) LEDs. Devices were grown and fabricated on a 1D array of narrow substrate mesas to limit the MD run length. Reducing the mesa width from 20 μm to 5 μm lowered the density of basal plane and non-basal plane MDs on the mesas and limited the number of defect-generating dislocation intersections. This improvement in material quality yielded a 73% enhancement in peak external quantum efficiency for the devices with the narrowest mesas compared to the devices with the widest mesas.

  13. Fully Printed Halide Perovskite Light-Emitting Diodes with Silver Nanowire Electrodes.

    Science.gov (United States)

    Bade, Sri Ganesh R; Li, Junqiang; Shan, Xin; Ling, Yichuan; Tian, Yu; Dilbeck, Tristan; Besara, Tiglet; Geske, Thomas; Gao, Hanwei; Ma, Biwu; Hanson, Kenneth; Siegrist, Theo; Xu, Chengying; Yu, Zhibin

    2016-02-23

    Printed organometal halide perovskite light-emitting diodes (LEDs) are reported that have indium tin oxide (ITO) or carbon nanotubes (CNTs) as the transparent anode, a printed composite film consisting of methylammonium lead tribromide (Br-Pero) and poly(ethylene oxide) (PEO) as the emissive layer, and printed silver nanowires as the cathode. The fabrication can be carried out in ambient air without humidity control. The devices on ITO/glass have a low turn-on voltage of 2.6 V, a maximum luminance intensity of 21014 cd m(-2), and a maximum external quantum efficiency (EQE) of 1.1%, surpassing previous reported perovskite LEDs. The devices on CNTs/polymer were able to be strained to 5 mm radius of curvature without affecting device properties.

  14. Organic oxide/Al composite cathode in small molecular organic light-emitting diodes

    Science.gov (United States)

    Guo, Tzung-Fang; Yang, Fuh-Shun; Tsai, Zen-Jay; Wen, Ten-Chin; Wu, Ching-In; Chung, Chia-Tin

    2006-07-01

    This study addresses the feasibility of using an organic oxide/Al composite cathode to fabricate the small molecular organic light-emitting diodes (OLEDs). A supplementary organic buffer film is placed at the interface between the tris(8-hydroxyquinoline) aluminum (Alq3) and the organic oxide/Al complex layers. Incorporating the rubrene/poly(ethylene glycol) dimethyl ether (PEGDE) buffer layers into the composite cathode structure markedly improves the performance of devices. The luminous efficiencies of Alq3-based OLEDs biased at ˜100mA /cm2 are 4.8 and 5.1cd/A for rubrene (50Å)/PEGDE (15Å)/Al and rubrene (50Å)/PEGDE (15Å)/LiF (5Å)/Al cathode devices, and 1.3 and 3.8cd/A for devices with Al and LiF (5Å)/Al cathodes, respectively.

  15. Gravure printed PEDOT:PSS as anode for flexible ITO-free organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    M. Montanino

    2017-06-01

    Full Text Available Roll-to-roll gravure printing is considered as potential leading manufacturing technology for flexible, low cost and large area optoelectronics. However, solution processed multilayer organic electronics are still challenging to be produced, especially in the case of electrodes. In this work, the gravure printing technique was successfully employed to realize the highly conductive poly(3,4ethylenedioxythiophene:poly(styrene sulfonate (PEDOT:PSS polymeric anode and tested for the first time in flexible ITO-free (Indium Thin Oxide organic light emitting diodes (OLEDs. The device performances were found to be similar to those of a reference device containing a spin-coated polymeric anode. A gravure printed dimethyl sulfoxide (DMSO post-treatment was successfully tried to improve the printed anode characteristics. The obtained results show the way for future development for processing flexible ITO-free devices using the most attractive printing technology for roll-to-roll large area manufacturing.

  16. GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

    KAUST Repository

    Hsiao, Yu Hsuan

    2015-03-01

    Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.

  17. The compromises of printing organic electronics: a case study of gravure-printed light-emitting electrochemical cells.

    Science.gov (United States)

    Hernandez-Sosa, Gerardo; Tekoglu, Serpil; Stolz, Sebastian; Eckstein, Ralph; Teusch, Claudia; Trapp, Jannik; Lemmer, Uli; Hamburger, Manuel; Mechau, Norman

    2014-05-28

    Light-emitting electrochemical cells (LECs) are fabricated by gravure printing. The compromise between device performance and printing quality is correlated to the ink formulation and the printing process. It is shown that the rheological properties of the ink formulations of LECs can be tailored without changing the chemical composition of the material blend. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Laser-induced forward transfer of polymer light-emitting diode pixels with increased charge injection.

    Science.gov (United States)

    Shaw-Stewart, James; Lippert, Thomas; Nagel, Matthias; Nüesch, Frank; Wokaun, Alexander

    2011-02-01

    Laser-induced forward transfer (LIFT) has been used to print 0.6 mm × 0.5 mm polymer light-emitting diode (PLED) pixels with poly[2-methoxy, 5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) as the light-emitting polymer. The donor substrate used in the LIFT process is covered by a sacrificial triazene polymer (TP) release layer on top of which the aluminium cathode and functional MEH-PPV layers are deposited. To enhance electron injection into the MEH-PPV layer, a thin poly(ethylene oxide) (PEO) layer on the Al cathode or a blend of MEH-PPV and PEO was used. These donor substrates have been transferred onto both plain indium tin oxide (ITO) and bilayer ITO/PEDOT:PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) blend) receiver substrates to create the PLED pixels. For comparison, devices were fabricated in a conventional manner on ITO substrates coated with a PEDOT:PSS hole-transporting layer. Compared to multilayer devices without PEO, devices with ITO/PEDOT:PSS/MEH-PPV:PEO blend/Al architecture show a 100 fold increase of luminous efficiency (LE) reaching a maximum of 0.45 cd/A for the blend at a brightness of 400 cd/m(2). A similar increase is obtained for the polymer light-emitting diode (PLED) pixels deposited by the LIFT process, although the maximum luminous efficiency only reaches 0.05 cd/A for MEH-PPV:PEO blend, which we have attributed to the fact that LIFT transfer was carried out in an ambient atmosphere. For all devices, we confirm a strong increase in device performance and stability when using a PEDOT:PSS film on the ITO anode. For PLEDs produced by LIFT, we show that a 25 nm thick PEDOT:PSS layer on the ITO receiver substrate considerably reduces the laser fluence required for pixel transfer from 250 mJ/cm(2) without the layer to only 80 mJ/cm(2) with the layer.

  19. Local and Long-Range Hybrid Density Functional Study on an Organic Light-Emitting Molecule with Pull-Push Structure%局域和长程杂化密度泛函研究推拉结构有机发光分子

    Institute of Scientific and Technical Information of China (English)

    刘小君; 王宁; 程浩

    2011-01-01

    用含时密度泛函方法研究了具有推拉结构的有机发光材料3-(二氰亚甲基)-5,5-二甲基-1-(4-[9-咔唑基]-苯乙烯基)环己烯(DCDCC)的吸收和荧光光谱,并考虑了溶剂效应.通过与实验光谱的比较,重点评价了包括局域和长程在内的8种交换泛函.结果表明泛函的选择对结果的可靠性至关重要,在密度泛函和含时密度泛函理论框架下,包含44%Hartree Fock交换泛函的BMK杂化函数联同连续极化模型和中等大小的基组最适合研究DCDCC分子的光谱性质.此外,尽管DCDCC分子内电荷转移并没有强致发出双荧光,但仍然可以用平面分子内电荷转移和扭转分子内电荷转移模型解释DCDCC激发态的结构.BMK泛函计算的结果表明DCDCC的激发态结构支持平面分子内电荷转移模型.%The absorption and fluorescence spectra of 3-(dicyanomethylene)-5,5-dimethyl-1-(4-[9-carbazol]-styryl)cyclohexene (DCDCC), an organic light emitting material with pull-push structure, were investigated using a time-dependent density functional theory (TD-DFT) approach and bulk solvent effects were taken into account. The performance of eight exchange-correlation functionals including both local and long-range hybrids was assessed by comparing the calculated electron transition energies to experimental observations. It turns out that the appropriate choice of functionals is crucial to obtain an accurate value and BMK hybrids, which contain 44% Hartree Fock exchange, in the frame of DFT and TD-DFT with the polarizable continuum model and a medium sized basis set, emerges as an effective strategy for DCDCC. Moreover, the planar and twisted intramolecular charge transfer (PICT and TICT)models were used to interpret the excited state structure of DCDCC although the charge transfer character of the excited-state was not as intense as to emit obvious double fluorescence. The accurate structures were optimized by BMK and supported the PICT model.

  20. Low temperature solution process-based defect-induced orange-red light emitting diode

    Science.gov (United States)

    Biswas, Pranab; Baek, Sung-Doo; Hoon Lee, Sang; Park, Ji-Hyeon; Jeong Lee, Su; Il Lee, Tae; Myoung, Jae-Min

    2015-01-01

    We report low-temperature solution-processed p-CuO nanorods (NRs)/n-ZnO NRs heterojunction light emitting diode (LED), exploiting the native point defects of ZnO NRs. ZnO NRs were synthesized at 90 °C by using hydrothermal method while CuO NRs were synthesized at 100 °C by using microwave reaction system. The electrical properties of newly synthesized CuO NRs revealed a promising p-type nature with a hole concentration of 9.64 × 1018 cm−3. The current-voltage characteristic of the heterojunction showed a significantly high rectification ratio of 105 at 4 V with a stable current flow. A broad orange-red emission was obtained from the forward biased LED with a major peak at 610 nm which was attributed to the electron transition from interstitial zinc to interstitial oxygen point defects in ZnO. A minor shoulder peak was also observed at 710 nm, corresponding to red emission which was ascribed to the transition from conduction band of ZnO to oxygen vacancies in ZnO lattice. This study demonstrates a significant progress toward oxide materials based, defect-induced light emitting device with low-cost, low-temperature methods. PMID:26648420

  1. P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Wang, Jiannong [Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-07-21

    We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.

  2. The electrodeposition of multilayers on a polymeric substrate in Flexible Organic Light Emitting Diode (OLED)

    Science.gov (United States)

    Guedes, Andre F. S.; Guedes, Vilmar P.; Tartari, Simone; Cunha, Idaulo Jose

    2016-09-01

    The development of Organic Light Emitting Diode (OLED), using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly(3,4-ethylenedioxythiophene), PEDOT, Poly(p-phenylenevinylene), PPV, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis), Optical Parameters (OP) and Scanning Electron Microscopy (SEM). In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the PET/ITO/PEDOT/PPV/PANI-X1/Al layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED), has indicated that the OLED has higher irradiance. After 1200 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

  3. A large-scale NEMS light-emitting array based on CVD graphene (Conference Presentation)

    Science.gov (United States)

    Kim, Hyungsik; Kim, Young Duck; Lee, Changhyuk; Lee, Sunwoo; Seo, Dong-jea; Jerng, Sahng-Kyoon; Chun, Seung-Hyun; Hone, James; Shepard, Kenneth L.

    2017-02-01

    Graphene has received much interest from optical communities largely owing to its photon-like linear energy band structure called Dirac cone. While majority of the recent research has dealt with plasmon and polariton of the two-dimensional material, a recently reported graphene light emitter could render a new dimension of applications, particularly in high-speed optical communication. Moreover chemical vapor deposition (CVD) growth technique for graphene is available today providing means for scalable high quality graphene. The reported graphene emitter provides broadband light emission from visible to mid-infrared which could be instrumental in multi-color display units and optical communications, however a truly large scale implementation has not previously been achieved. Here we demonstrate a CMOS-compatible 262,144 light-emitting pixels array (10 x 10 mm2) based on suspended CVD graphene nano-electro-mechanical systems (GNEMS). A single photoemission area is 19.6 µm2 and a unit pixel is consisting of 512 photoemission devices (16 x 16) where a multiplexer and a digital to analog converter (DAC) are used to control each pixel. This work clearly demonstrates scalability of multi-channel GNEMS light-emitting array, an atomically thin electro-optical module, and further paves a path for its commercial implementation transparent display or high-speed optical communication.

  4. ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    David P. Norton; Stephen Pearton; Fan Ren

    2007-09-30

    By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg for higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light

  5. Fused thiophene-based conjugated polymers and their use in optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Facchetti, Antonio; Marks, Tobin J; Takai, Atsuro; Seger, Mark; Chen, Zhihua

    2015-11-03

    The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  6. White organic light-emitting diodes with 4 nm metal electrode

    Science.gov (United States)

    Lenk, Simone; Schwab, Tobias; Schubert, Sylvio; Müller-Meskamp, Lars; Leo, Karl; Gather, Malte C.; Reineke, Sebastian

    2015-10-01

    We investigate metal layers with a thickness of only a few nanometers as anode replacement for indium tin oxide (ITO) in white organic light-emitting diodes (OLEDs). The ultrathin metal electrodes prove to be an excellent alternative that can, with regard to the angular dependence and efficiency of the OLED devices, outperform the ITO reference. Furthermore, unlike ITO, the thin composite metal electrodes are readily compatible with demanding architectures (e.g., top-emission or transparent OLEDs, device unit stacking, etc.) and flexible substrates. Here, we compare the sheet resistance of both types of electrodes on polyethylene terephthalate for different bending radii. The electrical performance of ITO breaks down at a radius of 10 mm, while the metal electrode remains intact even at radii smaller than 1 mm.

  7. Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Seokhwan; Kim, Ji Whan; Lee, Sangyeob, E-mail: sy96.lee@samsung.com [Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi 443-803 (Korea, Republic of)

    2015-07-27

    We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq){sub 2}(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq){sub 2}(acac). The lifetime of device (t{sub 95}: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.

  8. Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

    Science.gov (United States)

    Ray, William Johnstone (Inventor); Lowenthal, Mark David (Inventor); Shotton, Neil O. (Inventor); Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

    2014-01-01

    The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

  9. Aligning the Band Structures of Polymorphic Molybdenum Oxides and Organic Emitters in Light-Emitting Diodes

    Science.gov (United States)

    Yun, Jongmin; Jang, Woosun; Lee, Taehun; Lee, Yonghyuk; Soon, Aloysius

    2017-02-01

    Heavy transition-metal oxides are widely studied for key applications in electronics and energy technologies. In cutting-edge organic-light-emitting-diode (OLED) devices, there remain scientific challenges to achieve an efficient transfer of charges between electrodes and the organic layer. Recently, polymorphic MoO3 has been actively investigated to exploit its unique high work-function values, especially for its use in the electrode buffer layer to effectively transfer the charges in OLED devices. However, no systematic fundamental studies of its electronic structure are available. Thus, in this study, we use first-principles density-functional theory to investigate both the crystal structure and the electronic structure of the MoO3 polymorphs, and we conclude with a simple perspective to screen the best candidate for OLED applications via a hole transport-barrier descriptor.

  10. High-Resolution Organic Light-Emitting Diodes Patterned via Contact Printing.

    Science.gov (United States)

    Li, Jinhai; Xu, Lisong; Tang, Ching W; Shestopalov, Alexander A

    2016-07-01

    In this study, we report a contact printing technique that uses polyurethane-acrylate (PUA) polymers as the printing stamps to pattern electroluminescent layers of organic light emitting diodes (OLEDs). We demonstrate that electroluminescent thin films can be printed with high uniformity and resolution. We also show that the performance of the printed devices can be improved via postprinting thermal annealing, and that the external quantum efficiency of the printed devices is comparable with the efficiency of the vacuum-deposited OLEDs. Our results suggest that the PUA-based contact printing can be used as an alternative to the traditional shadow mask deposition, permitting manufacturing of OLED displays with the resolution up to the diffraction limit of visible-light emission.

  11. Very low color-temperature organic light-emitting diodes for lighting at night

    Science.gov (United States)

    Jou, Jwo-Huei; Tang, Ming-Chun; Chen, Pin-Chu; Chen, Szu-Hao; Shen, Shih-Ming; Chen, Chien-Chih; Wang, Ching-Chiun; Chen, Chien-Tien

    2011-12-01

    Light sources with low color temperature (CT) are essential for their markedly less suppression effect on the secretion of melatonin, and high power efficiency is crucial for energy-saving. To provide visual comfort, the light source should also have a reasonably high color rendering index (CRI). In this report, we demonstrate the design and fabrication of low CT and high efficiency organic light-emitting diodes. The best resultant device exhibits a CT of 1,880 K, much lower than that of incandescent bulbs (2,000-2,500 K) and even as low as that of candles, (1,800-2,000 K), a beyond theoretical limit external quantum efficiency 22.7 %, and 36.0 lm/W at 100 cd/m 2. The high efficiency of the proposed device may be attributed to its interlayer, which helps effectively distribute the entering carriers into the available recombination zones.

  12. Single nanowire green InGaN/GaN light emitting diodes

    Science.gov (United States)

    Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

    2016-10-01

    Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

  13. Tunability of InGaN/GaN quantum well light emitting diodes through current

    Science.gov (United States)

    Biswas, Dipankar; Panda, Siddhartha

    2013-07-01

    In the recent years, InGaN/GaN quantum well (QW) light emitting diodes (LEDs) have gathered much importance through the introduction of white LEDs and dual wavelength LEDs. However, the continuous tunability of InGaN/GaN QW LEDs has not been well addressed or discussed. In this paper, we introduce the tunability of an InGaN/GaN QW LED having a well width of 4 nm and In mole fraction of 0.3. The results, obtained from self-consistent solutions of the Schrödinger and Poisson equations, show that the transition energy of the LED may be continuously tuned by the device current. A prominent nonlinearity of the transition energy with the device current is generated, which should be of interest to the research workers in the field of optoelectronics.

  14. Vertical thinking in blue light emitting diodes: GaN-on-graphene technology

    Science.gov (United States)

    Bayram, C.; Kim, J.; Cheng, C.-W.; Ott, J.; Reuter, K. B.; Bedell, S. W.; Sadana, D. K.; Park, H.; Dimitrakopoulos, C.

    2014-03-01

    In this work, we show that a 2D cleave layer (such as epitaxial graphene on SiC) can be used for precise release of GaNbased light emitting diodes (LEDs) from the LED-substrate interface. We demonstrate the thinnest GaN-based blue LED and report on the initial electrical and optical characteristics. Our LED device employs vertical architecture: promising excellent current spreading, improved heat dissipation, and high light extraction with respect to the lateral one. Compared to conventional LED layer release techniques used for forming vertical LEDs (such as laser-liftoff and chemical lift-off techniques), our process distinguishes itself with being wafer-scalable (large area devices are possible) and substrate reuse opportunity.

  15. Polarized light emitting diode by long-range nanorod self-assembling on a water surface.

    Science.gov (United States)

    Rizzo, Aurora; Nobile, Concetta; Mazzeo, Marco; De Giorgi, Milena; Fiore, Angela; Carbone, Luigi; Cingolani, Roberto; Manna, Liberato; Gigli, Giuseppe

    2009-06-23

    We demonstrate a straightforward strategy to fabricate a multilayer inorganic/organic polarized light-emitting diode device based on highly ordered arrays of rod-shaped nanocrystals as the active species. We have developed a simple and effective method that allows colloidal CdSe/CdS core/shell nanorods to be laterally aligned in smectic or nematic phases on the surface of water. A floating film of such ordered nanorods has been collected by a poly(dimethylsiloxane) (PDMS) stamp pad and transferred by contact printing onto previously evaporated organic layers. Thanks to the lateral nanorod alignment the as-prepared film exhibited strong polarized photoluminescence and it has been used as emissive layer in the polarized electroluminescent device.

  16. Improved Carrier Transfer in Red Organic Light Emitting Diodes Doped with Rubrene

    Institute of Scientific and Technical Information of China (English)

    刘宏宇; 高文宝; 杨开霞; 刘式墉

    2002-01-01

    A red organic light emitting diode doped with rubrene is constructed with the configuration of ITO/NPB/Alq3:rubrene:DCM/Alq3/LiF/Al. In the device, N,N'-bis-(1-naphthl)-N,N:diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) is used as the hole-transporting layer, tris(8-quinolinolato) aluminium (Alq3) as the electron-transporting layer and Alq3 doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) and 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) as the emitting layer. When the doping concentration of rubrene is 6% and that of DCM is 4%, red purity of the device is improved effectively. The experimental phenomena are explained as the result of the improved carrier transfer from rubrene to DCM.

  17. White organic light-emitting diodes with 4 nm metal electrode

    Energy Technology Data Exchange (ETDEWEB)

    Lenk, Simone; Schwab, Tobias; Schubert, Sylvio; Müller-Meskamp, Lars; Leo, Karl; Reineke, Sebastian [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Gather, Malte C. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews KY16 9SS (United Kingdom)

    2015-10-19

    We investigate metal layers with a thickness of only a few nanometers as anode replacement for indium tin oxide (ITO) in white organic light-emitting diodes (OLEDs). The ultrathin metal electrodes prove to be an excellent alternative that can, with regard to the angular dependence and efficiency of the OLED devices, outperform the ITO reference. Furthermore, unlike ITO, the thin composite metal electrodes are readily compatible with demanding architectures (e.g., top-emission or transparent OLEDs, device unit stacking, etc.) and flexible substrates. Here, we compare the sheet resistance of both types of electrodes on polyethylene terephthalate for different bending radii. The electrical performance of ITO breaks down at a radius of 10 mm, while the metal electrode remains intact even at radii smaller than 1 mm.

  18. Organic semiconductor heterojunctions and its application in organic light-emitting diodes

    CERN Document Server

    Ma, Dongge

    2017-01-01

    This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

  19. A facile one-step solution deposition via non-solvent/solvent mixture for efficient organometal halide perovskite light-emitting diodes.

    Science.gov (United States)

    Jiao, Bo; Zhu, Xiaobo; Wu, Wen; Dong, Hua; Xia, Bin; Xi, Jun; Lei, Ting; Hou, Xun; Wu, Zhaoxin

    2016-06-01

    Although organometal halide perovskite materials have shown great potential in light-emitting diodes, their performance is greatly restricted by the poor morphology of the perovskite layer. In this work, we demonstrate a facile one-step solution method to improve the perovskite film morphology via a non-solvent/solvent mixture. An efficient CH3NH3PbBr3-based light-emitting diode was prepared with a chlorobenzene/N,N-dimethylformamide mixed solvent. A high efficiency of 0.54 cd A(-1) is demonstrated, which is 22 times higher than that of a device fabricated by a traditional one-step solution process. Furthermore, the uniformity of the emission region and the device stability are strongly improved by this facile one-step solution process. Our work paves a new way for the morphological control of perovskite films for application in light-emitting diodes.

  20. Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

    Science.gov (United States)

    Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

    2016-05-01

    Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

  1. Response time of light emitting diode-logarithmic electrometer

    Science.gov (United States)

    Acharya, Y. B.; Vyavahare, P. D.

    1998-02-01

    In a logarithmic electrometer which uses a transistor as a nonlinear element, a capacitance is generally connected across the feedback element of the operational amplifier. This stabilizes the loop but degrades the response at low current levels. However the stability problem is not so serious when a junction diode is used. In the present work an attempt was made to study the response time of a logarithmic electrometer which uses a light emitting diode (LED) as a nonlinear element and without external capacitance. The calculated values of rise time are based on an equivalent circuit with a depletion layer capacitance and voltage dependent conductance. These values are found to be in reasonable agreement with the experimentally measured values. This study will be useful in the estimation of dynamical errors in logarithmic electrometers using junction diode/LED, LED photometers and will be helpful in the techniques for improvements of the response time of logarithmic electrometers using a junction diode, particularly at low currents.

  2. LIGHT-EMITTING DIODE TECHNOLOGY IMPROVES INSECT TRAPPING

    Science.gov (United States)

    GILLEN, JONATHON I.; MUNSTERMANN, LEONARD E.

    2008-01-01

    In a climate of increased funding for vaccines, chemotherapy, and prevention of vector-borne diseases, fewer resources have been directed toward improving disease and vector surveillance. Recently developed light-emitting diode (LED) technology was applied to standard insect-vector traps to produce a more effective lighting system. This approach improved phlebotomine sand fly capture rates by 50%, and simultaneously reduced the energy consumption by 50–60%. The LEDs were incorporated into 2 lighting designs, 1) a LED combination bulb for current light traps and 2) a chip-based LED design for a modified Centers for Disease Control and Prevention light trap. Detailed descriptions of the 2 designs are presented. PMID:18666546

  3. Light emitting diodes (LEDs) applied to microalgal production.

    Science.gov (United States)

    Schulze, Peter S C; Barreira, Luísa A; Pereira, Hugo G C; Perales, José A; Varela, João C S

    2014-08-01

    Light-emitting diodes (LEDs) will become one of the world's most important light sources and their integration in microalgal production systems (photobioreactors) needs to be considered. LEDs can improve the quality and quantity of microalgal biomass when applied during specific growth phases. However, microalgae need a balanced mix of wavelengths for normal growth, and respond to light differently according to the pigments acquired or lost during their evolutionary history. This review highlights recently published results on the effect of LEDs on microalgal physiology and biochemistry and how this knowledge can be applied in selecting different LEDs with specific technical properties for regulating biomass production by microalgae belonging to diverse taxonomic groups. Copyright © 2014 Elsevier Ltd. All rights reserved.

  4. III-nitride based light emitting diodes and applications

    CERN Document Server

    Han, Jung; Amano, Hiroshi; Morkoç, Hadis

    2017-01-01

    The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performanc...

  5. Characterization, Modeling, and Optimization of Light-Emitting Diode Systems

    DEFF Research Database (Denmark)

    Thorseth, Anders

    This thesis explores, characterization, modeling, and optimization of light-emitting diodes (LED) for general illumination. An automated setup has been developed for spectral radiometric characterization of LED components with precise control of the settings of forward current and operating...... comparing the chromaticity of the measured SPD with tted models, the deviation is found to be larger than the lower limit of human color perception. A method has been developed to optimize multicolored cluster LED systems with respect to light quality, using multi objective optimization. The results...... temperature. The automated setup has been used to characterize commercial LED components with respect to multiple settings. It is shown that the droop in quantum efficiency can be approximated by a simple parabolic function. The investigated models of the spectral power distributions (SPD) from LEDs...

  6. Acceptor impurity activation in III-nitride light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Römer, Friedhard, E-mail: froemer@uni-kassel.de; Witzigmann, Bernd, E-mail: bernd.witzigmann@uni-kassel.de [Department of Electrical Engineering, University of Kassel, 34121 Kassel (Germany)

    2015-01-12

    In this work, the role of the acceptor doping and the acceptor activation and its impact on the internal quantum efficiency (IQE) of a Gallium Nitride (GaN) based multi-quantum well light emitting diode is studied by microscopic simulation. Acceptor impurities in GaN are subject to a high activation energy which depends on the presence of proximate dopant atoms and the electric field. A combined model for the dopant ionization and activation barrier reduction has been developed and implemented in a semiconductor carrier transport simulator. By model calculations, we demonstrate the impact of the acceptor activation mechanisms on the decay of the IQE at high current densities, which is known as the efficiency droop. A major contributor to the droop is the electron leakage which is largely affected by the acceptor doping.

  7. III-nitride based light emitting diodes and applications

    CERN Document Server

    Han, Jung; Amano, Hiroshi; Morkoç, Hadis

    2013-01-01

    Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on th...

  8. Application of Surface Plasmonics for Semiconductor Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed

    This thesis addresses the lack of an efficient semiconductor light source at green emission colours. Considering InGaN based quantum-well (QW) light-emitters and light-emitting diodes (LEDs), various ways of applying surface plasmonics and nano-patterning to improve the efficiency, are investigated....... By placing metallic thin films or nanoparticles (NPs) in the near-field of QW light-emitters, it is possible to improve their internal quantum efficiency (IQE) through the Purcell enhancement effect. It has been a general understanding that in order to achieve surface plasmon (SP) coupling with QWs...... is presented to obtain light extraction efficiency (LEE) improvement through nano-patterning, and IQE improvement through SP-QW coupling. Considering the fabrication process aspect, dry-etching damage on the semiconductor light-emitters from the nano-patterning is also addressed. Different ion-damage treatment...

  9. Resonance Raman measurements of carotenoids using light emitting diodes

    CERN Document Server

    Bergeson, S D; Eyring, N J; Fralick, J F; Stevenson, D N; Ferguson, S B

    2008-01-01

    We report on the development of a compact commercial instrument for measuring carotenoids in skin tissue. The instrument uses two light emitting diodes (LEDs) for dual-wavelength excitation and four photomultiplier tubes for multichannel detection. Bandpass filters are used to select the excitation and detection wavelengths. The f/1.3 optical system has high optical throughput and single photon sensitivity, both of which are crucial in LED-based Raman measurements. We employ a signal processing technique that compensates for detector drift and error. The sensitivity and reproducibility of the LED Raman instrument compares favorably to laser-based Raman spectrometers. This compact, portable instrument is used for non-invasive measurement of carotenoid molecules in human skin with a repeatability better than 10%.

  10. Simulations of charge transport in organic light emitting diodes

    CERN Document Server

    Martin, S J

    2002-01-01

    In this thesis, two approaches to the modelling of charge transport in organic light emitting diodes (OLEDs) are presented. The first is a drift-diffusion model, normally used when considering conventional crystalline inorganic semiconductors (e.g. Si or lll-V's) which have well defined energy bands. In this model, electron and hole transport is described using the current continuity equations and the drift-diffusion current equations, and coupled to Poisson's equation. These equations are solved with the appropriate boundary conditions, which for OLEDs are Schottky contacts; carriers are injected by thermionic emission and tunnelling. The disordered nature of the organic semiconductors is accounted for by the inclusion of field-dependent carrier mobilities and Langevin optical recombination. The second approach treats the transport of carriers in disordered organic semi-conductors as a hopping process between spatially and energetically disordered sites. This method has been used previously to account for th...

  11. A Pair of Light Emitting Diodes for Absorbance Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Dongyong; Eom, Inyong [Catholic Univ. of Daegu, Gyeongsan (Korea, Republic of)

    2013-10-15

    Two same wavelength LEDs (i. e. an emitter LED and a detector LED, respectively) were successfully used to measure absorbance of BTB solution. A linear calibration with r-squared value of 0.9945 was achieved. 0.03 μM of LOD was observed with a noise level of 2 Χ 10{sup -4} absorbance unit. We are now examining relative sensitivities of different LEDs with distinct wavelength. In the future, building a spectrophotometer equipped with LEDs is quite interesting both in scientifically and pedagogically (i. e. undergraduate lab course). Light emitting diodes (LEDs) have a semiconductor chip (∼1 mm{sup 2} area) mounted on a concave mirror and emit narrow band of wavelengths when forward biased. LEDs have been widely used in many fields. Conventional light bulbs are being replaced by LED bulbs.

  12. Quantum key distribution with an entangled light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Dzurnak, B.; Stevenson, R. M.; Nilsson, J.; Dynes, J. F.; Yuan, Z. L.; Skiba-Szymanska, J.; Shields, A. J. [Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

    2015-12-28

    Measurements performed on entangled photon pairs shared between two parties can allow unique quantum cryptographic keys to be formed, creating secure links between users. An advantage of using such entangled photon links is that they can be adapted to propagate entanglement to end users of quantum networks with only untrusted nodes. However, demonstrations of quantum key distribution with entangled photons have so far relied on sources optically excited with lasers. Here, we realize a quantum cryptography system based on an electrically driven entangled-light-emitting diode. Measurement bases are passively chosen and we show formation of an error-free quantum key. Our measurements also simultaneously reveal Bell's parameter for the detected light, which exceeds the threshold for quantum entanglement.

  13. Organic Light-Emitting Diodes Driven by Organic Transistors

    Institute of Scientific and Technical Information of China (English)

    胡远川; 董桂芳; 王立铎; 梁琰; 邱勇

    2004-01-01

    Organic thin-film field-effect transistors (OTFTs) with pentacene as the semiconductor have been fabricated for driving an organic light-emitting diode (OLED). The driving circuit includes two OTFTs and one storage capacitor. The field-effect mobility of the transistors in the driving circuit is more than 0.3 cm2/Vs, and the on/off ratio is larger than 104. The light-emission area of the OLED is 0. 04mm2 and the brightness is larger than 400cd/m2 when the selected line voltage, data line voltage and drive voltage all are -40 V. The responding characteristics and holding characteristics are also researched when the selected line voltage and the date line voltage are changed.

  14. Model for Triplet State Engineering in Organic Light Emitting Diodes

    CERN Document Server

    Prodhan, Suryoday; Ramasesha, S

    2014-01-01

    Engineering the position of the lowest triplet state (T1) relative to the first excited singlet state (S1) is of great importance in improving the efficiencies of organic light emitting diodes and organic photovoltaic cells. We have carried out model exact calculations of substituted polyene chains to understand the factors that affect the energy gap between S1 and T1. The factors studied are backbone dimerisation, different donor-acceptor substitutions and twisted geometry. The largest system studied is an eighteen carbon polyene which spans a Hilbert space of about 991 million. We show that for reverse intersystem crossing (RISC) process, the best system involves substituting all carbon sites on one half of the polyene with donors and the other half with acceptors.

  15. Kinetics of transient electroluminescence in organic light emitting diodes

    Science.gov (United States)

    Shukla, Manju; Kumar, Pankaj; Chand, Suresh; Brahme, Nameeta; Kher, R. S.; Khokhar, M. S. K.

    2008-08-01

    Mathematical simulation on the rise and decay kinetics of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is presented. The transient EL is studied with respect to a step voltage pulse. While rising, for lower values of time, the EL intensity shows a quadratic dependence on (t - tdel), where tdel is the time delay observed in the onset of EL, and finally attains saturation at a sufficiently large time. When the applied voltage is switched off, the initial EL decay shows an exponential dependence on (t - tdec), where tdec is the time when the voltage is switched off. The simulated results are compared with the transient EL performance of a bilayer OLED based on small molecular bis(2-methyl 8-hydroxyquinoline)(triphenyl siloxy) aluminium (SAlq). Transient EL studies have been carried out at different voltage pulse amplitudes. The simulated results show good agreement with experimental data. Using these simulated results the lifetime of the excitons in SAlq has also been calculated.

  16. Dr. Harry Whelan With the Light Emitting Diode Probe

    Science.gov (United States)

    1999-01-01

    The red light from the Light Emitting Diode (LED) probe shines through the fingers of Dr. Harry Whelan, a pediatric neurologist at the Children's Hospital of Wisconsin in Milwaukee. Dr. Whelan uses the long waves of light from the LED surgical probe to activate special drugs that kill brain tumors. Laser light previously has been used for this type of surgery, but the LED light illuminates through all nearby tissues, reaching parts of tumors that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. Also, it can be used for hours at a time while still remaining cool to the touch. The probe was developed for photodynamic cancer therapy under a NASA Small Business Innovative Research Program grant. The program is part of NASA's Technology Transfer Department at the Marshall Space Flight Center.

  17. Cooling analysis of a light emitting diode automotive fog lamp

    Directory of Open Access Journals (Sweden)

    Zadravec Matej

    2017-01-01

    Full Text Available Efficiency of cooling fins inside of a light emitting diode fog lamp is studied using computational fluid dynamics. Diffusion in heat sink, natural convection and radiation are the main principles of the simulated heat transfer. The Navier-Stokes equations were solved by the computational fluid dynamics code, including Monte Carlo radiation model and no additional turbulence model was needed. The numerical simulation is tested using the existing lamp geometry and temperature measurements. The agreement is excellent inside of few degrees at all measured points. The main objective of the article is to determine the cooling effect of various heat sink parts. Based on performed simulations, some heat sink parts are found to be very ineffective. The geometry and heat sink modifications are proposed. While radiation influence is significant, compressible effects are found to be minor.

  18. Empirical Measurements of Filtered Light Emitting Diode (FLED) Replacements

    Science.gov (United States)

    Craine, Eric R.

    2016-05-01

    Low pressure sodium (LPS) public lighting, long favored by astronomers and dark sky advocates, is in decline due to a variety of economic issues. Light emitting diode (LED) technology is a rapidly ascendant mode of lighting in everything from residential to commercial applications. The resulting transition from LPS to LED has been accompanied by great angst in the environmental community, but very little has been done in the way of empirical measurement of LEDs in the field and their actual impacts on communities. The community of Waikoloa Village, Hawaii is located on the western slopes of Mauna Kea, within direct line of sight view of the major astronomical observatories on the mountain summit. Waikoloa has been rigorously illuminated almost exclusively by LPS for many years in acknowledgement of the importance of the Mauna Kea Observatories to the Big Island of Hawaii. As LPS ceases to be a viable alternative for local government support, a decision has been made to experimentally retrofit all of the Waikoloa street lighting with filtered light emitting diode (FLED) fixtures. This action has rendered Waikoloa Village a unique laboratory for evaluating the effects of such a change. STEM Laboratory has been awarded a research grant to make a variety of measurements of the light at night environment of Waikoloa Village both before and after the street light retrofit program. Measurements were conducted using a combination of techniques: Satellite Data Surveys (SDS), Ground Static Surveys (GSS photometry), Ground Mobile Surveys (GMS photometry), Airborne Surveys (ABS photography), and Spectroscopic Surveys (SpecS). The impact of the changes in lighting sources was profound, and the preliminary results of this extensive program are discussed in this presentation.

  19. 基于红色荧光染料3-(dicyanomethylene)-5,5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene的高性能白色有机电致发光器件%High performance white organic light-emitting devices based on a novel red fluorescent dye 3-(dicyanomethylene)-5, 5-dimethyl-1-(4-dimethylamino-styryl) cyclohexene

    Institute of Scientific and Technical Information of China (English)

    文雯; 王博; 李璐; 于军胜; 蒋亚东

    2009-01-01

    研究了基于红色荧光染料3-(dicyanomethylene)-5,5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene(DCDDC)的白色有机电致发光器件的性能,分别制备了基于DCDDC超薄层和DCDDC掺杂主体材料的两种器件结构:1)indium-tin oxide(ITO)/N、,N'-diphenyl-N,N'-bis(1-naphthyl-phenyl)-1,1'-biphenyl-4,4'-diamine(NPB)/4,4'-bis(2,2'-diphenylvinyl)-1.1'-diphenyl(DPVBi)/tris(8-quinolinolato)aluminum(Alq3)/DCDDC/Alq_3/Mg:Ag;2)ITO/NPB/Alcb:DCDDC/NPB/2,9-dimethyl-4.7-diphenyl-,10-phenanthroline(BCP)/Mg:Ag,测试了超薄层器件A和掺杂器件B的发光特性,比较了两种器件的亮度、效率曲线和光谱曲线.结果表明,两种结构的器件均实现了红绿蓝三波段白光发射,其中器件A在4 v启亮,在5.5 V时达到最大功率效率2.5 lm/W,在18.5 V时达到最大亮度16690 cd/m~2,色坐标稳定在(0.330,0.300)附近,在较大电压范围内仅有(-0.020,+0.002)的微小变化;器件B的启亮电压为5 V,最大功率效率和最大亮度分别为1.4 hm/W(9.6 V)和12580 cd/m~2(17V),色坐标随电压增大有明显红移,当电压大于9 V后色坐标稳定在白光等能点附近.我们发现两种器件的不同发光特性依赖于载流子复合区域的变化,此外,DCDDC超薄层的直接载流子俘获特性和Alq_3:DCDDC体系中的不完全能量转移特性对器件性能也有一定影响.%White organic light-emitting devices based on a red fluorescent dye 3-(dicyanomethylene)-5, 5-dimethyl-1-(4-dimethylamino-styryl) cyclohexene (DCDDC) were fabricated and investigated. Two kinds of devices were processed using uhrathin technology and doping technology. The structures of the devices were as followed: 1) indium-tin oxide (ITO)/N, N'-diphenyl-N, N'-bis(1-naphthyl-phenyl)-1, 1'-biphenyl-4, 4'-diamine (NPB)/4, 4'-bis(2, 2'-diphenylvinyl)-l, 1'-diphenyl (DPVBi)/tris(8-quinolinolato) aluminum (Alq_3)/DCDDC/Alq3/Mg: Ag; 2) ITO/NPB/Alq3 : DCDDC/NPB/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP)/Mg: Ag. The

  20. White light emitting diodes realized by using an active packaging method with CdSe/ZnS quantum dots dispersed in photosensitive epoxy resins.

    Science.gov (United States)

    Wang, Hao; Lee, Kyu-Seung; Ryu, Jae-Hyoung; Hong, Chang-Hee; Cho, Yong-Hoon

    2008-04-09

    White light emitting diodes (LEDs) have been realized using the active packaging (AP) method. The starting materials were bare InGaN LED chips and CdSe/ZnS core-shell quantum dots (QDs) dispersed in photosensitive epoxy resins. Such hybrid LED devices were fabricated using QD mixtures with one ('single'), two ('dual') or four ('multi') emission wavelengths. The AP method allows for convenient adjustment of multiple parameters such as the CIE-1931 coordinate (x, y), color temperature, and color rending index (CRI). All samples show good white balance, and under a 20 mA working current the luminous efficacies of the single, dual, and multi hybrid devices were 8.1 lm W(-1), 5.1 lm W(-1), and 6.4 lm W(-1), respectively. The corresponding quantum efficiencies were 4.1%, 3.1%, and 3.1%; the CRIs were 21.46, 43.76, and 66.20; and the color temperatures were 12 000, 8190, and 7740 K. This shows that the CRI of the samples can be enhanced by broadening the QD emission band, as is exemplified by the 21.46 CRI of the single hybrid LED compared to the 66.20 value for the multi hybrid LED. In addition, we were able to increase the CRI of the single hybrid LED from 15.31 to 32.50 by increasing the working currents from 1 to 50 mA.