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Sample records for hvpe-grown gan templates

  1. Orthodox etching of HVPE-grown GaN

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    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  2. LEDs on HVPE grown GaN substrates: Influence of macroscopic surface features

    Directory of Open Access Journals (Sweden)

    SK. S. Rahman

    2014-07-01

    Full Text Available We demonstrate the strong influence of GaN substrate surface morphology on optical properties and performance of light emitting devices grown on freestanding GaN. As-grown freestanding HVPE GaN substrates show excellent AFM RMS and XRD FWHM values over the whole area, but distinctive features were observed on the surface, such as macro-pits, hillocks and facets extending over several millimeters. Electroluminescence measurements reveal a strong correlation of the performance and peak emission wavelength of LEDs with each of these observed surface features. This results in multiple peaks and non-uniform optical output power for LEDs on as-grown freestanding GaN substrates. Removal of these surface features by chemical mechanical polishing results in highly uniform peak wavelength and improved output power over the whole wafer area.

  3. Positron annihilation study of HVPE grown thick GaN layers

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    Misheva, M. [Department of Physics, Sofia University, Blvd. J. Boucher 5, 1164 Sofia (Bulgaria); Larsson, H.; Monemar, B. [Department of Physics and Measurement Technology, Linkoeping University, 58183 Linkoeping (Sweden); Gogova, D. [Department of Physics and Measurement Technology, Linkoeping University, 58183 Linkoeping (Sweden); Central Laboratory of Solar Energy and New Energy Sources at the Bulg. Acad. Sci., Blvd. Tzarigradsko shose 72, 1784 Sofia (Bulgaria)

    2005-04-01

    Single-crystalline GaN layers with a thickness up to 330 {mu}m were grown by hydride vapor phase epitaxy on basal plane sapphire at gallium stable conditions in a bottom-fed vertical reactor at atmospheric pressure. Positron annihilation spectroscopy experiments were implemented in order to identify native point defects in the as-grown non-intentionally doped n-type GaN. Comparatively low concentrations of Ga vacancy related defects in the order of 10{sup 16} to 10{sup 17} cm{sup -3} were extracted from the positron annihilation spectroscopy data. The Ga vacancy defect concentration was related to the intensity of the yellow photoluminescence band centered at 2.2 eV. The influence of the growth rate on the Ga vacancy related defect concentration was investigated. A trend of decreasing of the defect concentration with increasing of layer thickness is observed, which correlates with improving crystalline quality with the thickness. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

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    Nagarajan, S.; Svensk, O.; Ali, M.; Naresh-Kumar, G.; Trager-Cowan, C.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.

    2013-07-01

    High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.

  5. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

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    Choudhary, B. S. [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India); Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Singh, A.; Tyagi, P. K. [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Tanwar, S. [Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Kumar, M. Senthil; Kushvaha, S. S., E-mail: kushvahas@nplindia.org [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India)

    2016-04-13

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

  6. Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template

    Institute of Scientific and Technical Information of China (English)

    XIE Xin-Jian; CHEN Jia-Rong; CAO Xian-Cun; ZHONG Fei; QIU Kai; LIU Gui-Feng; YIN Zhi-Jun; WANG Yu-Qi; LI Xin-Hua; JI Chang-Jian; HAN Qi-Fen

    2006-01-01

    We report the reduced-strain gallium-nitride (GaN) epitaxial growth on (0001) oriented sapphire by using quasi-porous GaN template. A GaN film in thickness of about 1μm was initially grown on a (0001) sapphire substrate by molecular beam epitaxy. Then it was dealt by putting, into 45% NaOH solution at 100°C for Wmin. By this process a quasi-porous GaN Rim was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050°C in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.

  7. Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets

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    Yeh, Ting-Wei; Lin, Yen-Ting; Ahn, Byungmin; Stewart, Lawrence S.; Daniel Dapkus, P.; Nutt, Steven R.

    2012-01-01

    We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaN nanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells (MQWs) grown on the facets of these nanosheets are demonstrated by cross-sectional transmission electron microscopy. Owing to the high aspect ratio of the GaN nanosheet structure, the MQWs predominantly grow on nonpolar GaN planes. The results suggest that GaN nanosheets provide a conduction path for device fabrication and also a growth template to reduce the piezoelectric field inside the active region of InGaN-based light emitting diodes.

  8. Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates

    Science.gov (United States)

    Svensk, O.; Ali, M.; Riuttanen, L.; Törmä, P. T.; Sintonen, S.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.

    2013-05-01

    In this paper we report on the MOCVD growth and characterization of GaN structures and InGaN single quantum wells grown on pillar patterned GaN/sapphire templates. During the regrowth a network of voids was intentionally formed at the interface of sapphire substrate and GaN epitaxial layer. The regrowth process was found to decrease the threading dislocation density of the overgrown layer. The quantum well sample grown on patterned template showed significantly higher optical output in photoluminescence measurements compared to the reference sample with identical internal quantum efficiency characteristics. We attribute the increase to enhanced light extraction efficiency caused by strong scattering and redirection of light from the scattering elements.

  9. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

    Science.gov (United States)

    Hubbard, S. M.; Zhao, G.; Pavlidis, D.; Sutton, W.; Cho, E.

    2005-11-01

    High-resistance (HR) GaN templates for AlGaN/GaN heterojunction field effect transistor (HFET) applications were grown using organometallic vapor phase epitaxy. The GaN sheet resistance was tuned using final nucleation layer (NL) annealing temperature and NL thickness. Using an annealing temperature of 1033 °C and NL thickness of 26 nm, GaN with sheet resistance of 10 10 Ω/sq was achieved, comparable to that of Fe-doped GaN. Material characterization results show that the high-resistance GaN is achieved due to compensating acceptor levels that may be introduced through edge-type threading dislocations. Optimization of annealing temperature and NL thickness provided a means to maximize GaN sheet resistance without significantly degrading material quality. In situ laser reflectance was used to correlate the NL properties to sheet resistance and material quality, providing a figure of merit for expected sheet resistance. AlGaN/GaN HFET layers grown using HR GaN templates with R of 10 10 Ω/sq gave surface and interface roughness of 14 and 7 Å, respectively. The 2DEG Hall mobility and sheet charge of HFETs grown using HR GaN templates was comparable to similar layers grown using unintentionally doped (UID) GaN templates.

  10. Investigation of InN layers grown by molecular beam epitaxy on GaN templates

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    Vilalta-Clemente, A.; Mutta, G.R.; Chauvat, M.P.; Morales, M.; Doualan, J.L.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, Caen (France); Grandal, J.; Sanchez-Garcia, M.A.; Calle, F. [ISOM y Department de Ingenieria Electronica, E.T.S.I. Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria (Spain); Valcheva, E.; Kirilov, K. [Faculty of Physics, Sofia University (Bulgaria)

    2010-05-15

    An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X-ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  11. Growth of GaN based structures on focused ion beam patterned templates

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    Cordier, Y.; Tottereau, O.; Nguyen, L. [Centre de Recherche sur l' Heteroepitaxie et ses Application, UPR-CNRS, Valbonne (France); Ramdani, M.; Soltani, A.; Boucherit, M.; Troadec, D.; Lo, F.Y.; Hu, Y.Y.; Ludwig, A.; Wieck, A.D. [Centre de Recherche sur l' Heteroepitaxie et ses Application, UPR-CNRS, Valbonne (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie, Cite Scientifique, Villeneuve d' Ascq (France); Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum (Germany)

    2011-05-15

    Focused ion beam technique is a powerful tool for defining patterns within a semiconductor film. In this paper, we show that it is possible to realize patterns such as disks and columns within thick GaN templates and that it is compatible with the regrowth of GaN based heterostructures. We study the effect of the pattern size and shape on the regrowth by molecular beam epitaxy. We show that the growth using ammonia as the nitrogen source with flux at temperature optimized for 2-dimensional growth leads to the apparition of well defined growth planes. We show that the development of these planes is dependent with the initial pattern size and shape. These results confirm the difficulty for realizing micro or nano-columns with axial heterostructures. At the opposite, these growth conditions seem favourable for core-shell heterostructures column with well defined m-plane and eventually a-plane lateral facets. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

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    Jang, Lee-Woon; Jeon, Dae-Woo [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Polyakov, A.Y.; Govorkov, A.V. [Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Sokolov, V.N. [Department of Engineering and Ecological Geology, Moscow State University, Vorobyovygory, Moscow 119991 (Russian Federation); Smirnov, N.B. [Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Cho, Han-Su; Yun, Jin-Hyeon [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shcherbatchev, K.D. [National University of Science and Technology MISiS, Leninsky Ave. 4, Moscow 119049 (Russian Federation); Baek, Jong-Hyeob [LED R and D Division, Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Lee, In-Hwan, E-mail: ihlee@jbnu.ac.kr [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-03-15

    Highlights: • Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme. • InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template. • Overgrown GaN films and LEDs showed lower strain and lower density of surface defects. • The overgrown LED structures showed enhanced electroluminescence efficiency. -- Abstract: Porous GaN templates were prepared by combined electrochemical etching (ECE) and back-side photoelectrochemical etching (PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures. Structural, luminescent, and electrical properties of the GaN and LED structures were studied and compared with the properties of structures grown under the same conditions on templates not subjected to ECE–PECE treatment. Overgrowth of LED structures on the ECE–PECE templates reduced strain, cracking, and micropits, leading to increased internal quantum efficiency and light extraction efficiency. This luminescence enhancement was observed in overgrown GaN films, but was more pronounced for InGaN/GaN LED structures due to suppression of piezoelectric polarization field in QWs.

  13. Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

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    Qing, Wang; Yang, Liu; Yongjian, Sun; Yuzhen, Tong; Guoyi, Zhang

    2016-08-01

    A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template. Project supported by the Guangdong Innovative Research Team Program (No. 2009010044), the China Postdoctoral Science Foundation (No. 2014M562233), the National Natural Science Foundation of Guangdong, China (No. 2015A030312011), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (No. IOSKL2014KF17).

  14. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

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    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain); Zuñiga-Perez, J.; Mierry, P. de [CRHEA-CNRS, 06560 Valbonne (France); Trampert, A. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  15. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates

    Science.gov (United States)

    Bengoechea-Encabo, A.; Albert, S.; Zuñiga-Perez, J.; de Mierry, P.; Trampert, A.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E.

    2013-12-01

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11-22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  16. Microstructures of GaN and In{sub x}Ga{sub 1-x}N films grown by MOCVD on free-standing GaN templates

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    Jasinski, J.; Liliental-Weber, Z.; Huang, D.; Reshchikov, M.A.; Yun, F.; Morkoc, H.; Sone, C.; Park, S.S.; Lee, K.Y.

    2002-04-30

    We summarize structural properties of thick HVPE GaN templates from the point of view of their application as substrates for growth of nitride layers. This is followed by the results of optical and structural studies, mostly transmission electron microscopy, of nitride layers grown by MOCVD on top of the HVPE substrates. The results indicate high structural quality of these layers with a low density of threading dislocations (in the range of 10{sup 6} cm{sup -2}). Convergent beam electron diffraction studies showed that the MOCVD GaN films have Ga-polarity, the same polarity as the HVPE GaN substrates. Structural studies of an InGaN layer grown on top of the MOCVD GaN film showed the presence of two layers, which differed in lattice parameter and composition. The upper layer, on the top of the structure had a c-lattice parameter about 2% larger than that of GaN and contained 10.3 {+-} 0.8% of In. Values measured for the thinner, intermediate layer adjacent to the GaN layer were about 2 .5 times lower.

  17. Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

    Science.gov (United States)

    Ali, M.; Svensk, O.; Riuttanen, L.; Kruse, M.; Suihkonen, S.; Romanov, A. E.; Törmä, P. T.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2012-08-01

    We present near-UV GaN light-emitting diodes (LEDs) grown on patterned GaN/sapphire templates with improved material quality and light extraction efficiency. Enhancement of light extraction efficiency is attributed to voids generated at the GaN/sapphire interface. The sidewall inclination angle of the voids can be controlled from nearly vertical (˜ 85°) to fully inclined (˜ 60°) by changing the initial patterning dimensions. Light extraction efficiency and material quality improve with a decreasing void sidewall angle. A 20% increase in the light output is observed at 20 mA of input current for LED structures with ˜60° inclined sidewall voids.

  18. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    Science.gov (United States)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  19. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

    Directory of Open Access Journals (Sweden)

    Yu-An Chen

    2014-01-01

    Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

  20. Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

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    Zhang, Y.; Bai, J.; Hou, Y.; Smith, R. M.; Yu, X.; Gong, Y.; Wang, T., E-mail: t.wang@sheffield.ac.uk [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom)

    2016-02-15

    We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO{sub 2} mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.

  1. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

    Science.gov (United States)

    Storm, D. F.; Hardy, M. T.; Katzer, D. S.; Nepal, N.; Downey, B. P.; Meyer, D. J.; McConkie, Thomas O.; Zhou, Lin; Smith, David J.

    2016-12-01

    While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitaxy. Nevertheless, freestanding GaN wafers are becoming more widely available, and there is great interest in growing GaN films and devices on bulk GaN substrates, in order to take advantage of the greatly reduced density of threading dislocations, particularly for vertical devices. However, homoepitaxial GaN growth is far from a trivial task due to the reactivity and different chemical sensitivities of N-polar (000_1) and Ga-polar (0001) GaN surfaces, which can affect the microstructure and concentrations of impurities in homoepitaxial GaN layers. In order to achieve high quality, high purity homoepitaxial GaN, it is necessary to investigate the effect of the ex situ wet chemical clean, the use of in situ cleaning procedures, the sensitivity of the GaN surface to thermal decomposition, and the effect of growth temperature. We review the current understanding of these issues with a focus on homoepitaxial growth of GaN by molecular beam epitaxy (MBE) on c-plane surfaces of freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE), as HVPE-grown substrates are most widely available. We demonstrate methods for obtaining homoepitaxial GaN layers by plasma-assisted MBE in which no additional threading dislocations are generated from the regrowth interface and impurity concentrations are greatly reduced.

  2. Evolution of threading dislocations in GaN epitaxial laterally overgrown on GaN templates using self-organized graphene as a nano-mask

    Science.gov (United States)

    Xu, Yu; Cao, Bing; He, Shunyu; Qi, Lin; Li, Zongyao; Cai, Demin; Zhang, Yumin; Ren, Guoqiang; Wang, Jianfeng; Wang, Chinhua; Xu, Ke

    2017-09-01

    Growth of high-quality GaN within a limited thickness is still a challenge, which is important both in improving device performance and in reducing the cost. In this work, a self-organized graphene is investigated as a nano-mask for two-step GaN epitaxial lateral overgrowth (2S-ELOG) in hydride vapor phase epitaxy. Efficient improvement of crystal quality was revealed by x-ray diffraction. The microstructural properties, especially the evolution of threading dislocations (TDs), were investigated by scanning electron microscopy and transmission electron microscopy. Stacking faults blocked the propagation of TDs, and fewer new TDs were subsequently generated by the coalescence of different orientational domains and lateral-overgrown GaN. This evolution mechanism of TDs was different from that of traditional ELOG technology or one-step ELOG (1S-ELOG) technology using a two-dimensional (2D) material as a mask.

  3. Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates.

    Science.gov (United States)

    Sundaram, S; Li, X; El Gmili, Y; Bonanno, P L; Puybaret, R; Pradalier, C; Pantzas, K; Patriarche, G; Voss, P L; Salvestrini, J P; Ougazzaden, A

    2016-03-18

    We report nano-selective area growth (NSAG) of BGaN by MOCVD on AlN/Si(111) and GaN templates resulting in 150 nm single crystalline nanopyramids. This is in contrast to unmasked or micro-selective area growth, which results in a multi-crystalline structure on both substrates. Various characterization techniques were used to evaluate NSAG as a viable technique to improve BGaN material quality on AlN/Si(111) using results of GaN NSAG and unmasked BGaN growth for comparison. Evaluation of BGaN nanopyramid quality, shape and size uniformity revealed that the growth mechanism is the same on both the templates. Further STEM analysis of BGaN nanopyramids on AlN/Si (111) templates confirmed that these are single-crystalline structures without any dislocations, likely due to single nucleation occurring in the 80 nm mask opening. CL results correspond to boron content between 1.7% and 2.0% in the nanopyramids. We conclude that NSAG is promising for growth of high-quality BGaN nanostructures and complex nano-heterostructures, especially for low-cost silicon substrates.

  4. Fabrication of a-plane InN nanostructures on patterned a-plane GaN template by ECR-MBE

    Energy Technology Data Exchange (ETDEWEB)

    Araki, Tsutomu; Yamashita, Shuhei [Department of Photonics, Ritsumeikan University, Kusatsu, Shiga (Japan); Yamaguchi, Tomohiro [Ritsumeikan Global Innovation Research Organization (R-GIRO), Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga (Japan); Yoon, Euijoon [Department of Materials Science and Engineering, WCU Hybrid Materials Program, Seoul National University, Mt56-1, Sillim-dong, Gwanak-gu, Seoul (Korea, Republic of); Nanishi, Yasushi [Ritsumeikan Global Innovation Research Organization (R-GIRO), Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga (Japan); Department of Materials Science and Engineering, WCU Hybrid Materials Program, Seoul National University, Mt56-1, Sillim-dong, Gwanak-gu, Seoul (Korea, Republic of)

    2012-03-15

    a-plane InN nanostructures were fabricated on a hole-patterned a-plane GaN template by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE). The growth temperature should be optimized to realize precise nucleation at the patterned holes with sufficient In desorption and a sufficiently long In migration length. Polarity determination clearly revealed that a-plane InN crystals have an anisotropic growth morphology. The InN growth rate in the N-polar [000-1] direction is higher than those in the In-polar [0001] and [1-100] directions. a-plane InN nano-walls were fabricated by exploiting the different the growth rates in the left angle 0001 right angle and left angle 1-100 right angle directions. SEM image of position-controlled a-plane InN nanostructures grown by ECR-MBE on a hole-patterned a-plane GaN template. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Evaluation of deep levels in GaN grown by RF-MBE on GaN template by capacitance DLTS

    Energy Technology Data Exchange (ETDEWEB)

    Mitsunaga, T.; Yagishita, Y.; Osaka, J.; Mizutani, T. [Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya (Japan); Kurouchi, M. [Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya (Japan); Kishimoto, S. [Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya (Japan); Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya (Japan)

    2008-07-01

    The dependence of deep levels in GaN epitaxial layer grown by molecular beam epitaxy on the V/III ratio was studied by capacitance deep level transient spectroscopy (DLTS). Four peaks corresponding to the electron traps were observed in the unintentionally n-doped GaN films grown at various growth conditions. The deep level concentrations of T1 (0.31 eV) and T4 (0.21 eV) traps increased with decrease of the V/III ratio. This suggests that T1 and T4 traps are related to the N-vacancies. Those of T2 (0.84 eV) and T3 (1.13 eV) traps did not show obvious dependence on the V/III ratio, but the concentration of the T2 and T3 traps increased with increase of the residual carrier concentration. T2 and T3 traps might have some correlation with the residual donor species. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (112{sup -}2) GaN templates

    Energy Technology Data Exchange (ETDEWEB)

    Niehle, M., E-mail: niehle@pdi-berlin.de; Trampert, A., E-mail: trampert@pdi-berlin.de [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Albert, S.; Bengoechea-Encabo, A.; Calleja, E. [ISOM and Departamento de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2015-03-01

    We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN(112{sup -}2) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

  7. Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar ( 11 2 ¯ 2 ) GaN templates

    Science.gov (United States)

    Niehle, M.; Trampert, A.; Albert, S.; Bengoechea-Encabo, A.; Calleja, E.

    2015-03-01

    We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 11 2 ¯ 2 ) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

  8. Electron tomography of (In,GaN insertions in GaN nanocolumns grown on semi-polar ( 11 2 ̄ 2 GaN templates

    Directory of Open Access Journals (Sweden)

    M. Niehle

    2015-03-01

    Full Text Available We present results of scanning transmission electron tomography on GaN/(In,GaN/GaN nanocolumns (NCs that grew uniformly inclined towards the patterned, semi-polar GaN( 11 2 ̄ 2 substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,GaN layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

  9. Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint

    Science.gov (United States)

    Gómez, V. J.; Gačević, Ž.; Soto-Rodríguez, P. E. D.; Aseev, P.; Nötzel, R.; Calleja, E.; Sánchez-García, M. A.

    2016-08-01

    This work presents a comparative study, based mainly on X-ray diffraction analysis, of compact (~100 nm thick) and uniform single crystal InGaN layers (In content <35%) grown by plasma-assisted molecular beam epitaxy. InGaN layers have been grown directly on Si(111) substrates and on commercially available GaN(0001)-on-sapphire templates.. A high reactivity of atomic N with Si leads to a formation of amorphous SiN on Si substrate, i.e. an indirect crystal-to-crystal InGaN/SiN/Si contact; the weak InGaN interaction with the underlying substrate (weak epitaxial constraint) further leads to poor surface "wetting" and consequent 3D nucleation. The InGaN growth on GaN is, on the other hand, characterized by a direct crystal-to-crystal InGaN/GaN contact; the strong InGaN interaction with the underlying substrate (strong epitaxial constraint) leads to good surface "wetting" and consequent 2D nucleation. All studied InGaN layers show single epitaxial relationship to both Si(111) and GaN(0001)-on-sapphire substrates as well as a relatively good compositional uniformity (no trace of InGaN phase separation). However, layers grown on Si show significantly lower strain and inferior crystallographic uniformity i.e. higher disorder in crystallographic tilt and twist. The surface "wetting" (poor vs. good) and epitaxial constraint (weak vs. strong) are suggested as the main origins of these discrepancies.

  10. Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

    Science.gov (United States)

    Wong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi

    2012-08-01

    AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation.

  11. Growth kinetics and structural perfection of (InN)1/(GaN)1-20 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    Science.gov (United States)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Itoi, Takaomi; Wang, Ke; Imai, Daichi; Yoshikawa, Akihiko

    2016-04-01

    The growth kinetics and structural perfection of (InN)1/(GaN)1-20 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN)1/(GaN)4 SPSs was around 10%, and the corresponding InN coverage in the ˜1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ˜1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  12. Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing

    Energy Technology Data Exchange (ETDEWEB)

    Paskova, T. [Department of Physics and Measurement Technology, Linkoeping University, 581 83 Linkoeping (Sweden); Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany); Darakchieva, V.; Paskov, P.P.; Monemar, B. [Department of Physics and Measurement Technology, Linkoeping University, 581 83 Linkoeping (Sweden); Bukowski, M.; Suski, T. [High Pressure Research Center, Unipress, Polish Academy of Sciences, 01-142 Warsaw (Poland); Ashkenov, N.; Schubert, M. [Fakultaet fuer Physik and Geowissenschaften, Universitaet Leipzig, 04103 Leipzig (Germany); Hommel, D. [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany)

    2006-06-15

    We have studied the effects of laser lift-off and polishing processes on the bending of free-standing HVPE grown GaN thick films. Their structural characteristics were accessed by reciprocal space mapping and lattice parameters measurements as well as by Raman scattering and photoluminescence. The in-plane strain difference between the two faces was found to have determining effect on the bending of the free-standing films. Removing the high-defect-density near-interface region either by melting caused by laser lift-off, or by polishing, or by point defects dissociation caused by high-pressure annealing was found to lead to flattening of the strain distribution along the film thickness and a significant reduction of the bending of the free-standing films. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Improvement of crystal quality of GaN grown on AlN template by MOCVD using HT-AlN interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Yuebin, Tao; Zhizhong, Chen; Zhijian, Yang; Liwen, Sang; Zhitao, Chen; Ding, Li; Hao, Fang; Guoyi, Zhang [State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing (China); Yaobo, Pan; Jianfeng, Yan; Guangmin, Zhu; Cheng, Chen; Shitao, Li; Maosheng, Hao [Epilight Technology Co., Ltd., Shanghai (China)

    2009-06-15

    Two GaN samples, with and without high temperature (HT)-AlN interlayer (labelled as sample A and B, respectively) grown by MOCVD on AlN template, were investigated by double-crystal X-ray diffraction (DC-XRD), photoluminescence (PL), and atomic force microscope (AFM) measurements. It was found that the crystal quality of GaN could be greatly improved by the HT-AlN interlayer. The full width at half maximum (FWHM) of (102) reflection in XRD rocking curve was narrower for sample A than that for sample B. However, the FWHMs of (002) reflections were almost the same for the two samples. In addition, the tilt degree which reflected screw dislocation density was almost the same, while the twist degree which reflected edge dislocation density changed from 0.214 to 0.152 when the HT-AlN interlayer was used. Both the intensities of (102) reflection in XRD and band edge emission in PL for sample A were stronger too. In the AFM images, the atomic growth steps of sample A were clearer than those of sample B. According to the results of the in situ optical reflectivity spectra and the atomic force microscope (AFM) images, the above results were attributed to the three-dimensional (3D) growth mode of the HT-AlN interlayer. The HT-AlN interlayer may work as a kind of ''micro-area'' seed for epitaxial lateral overgrowth (ELOG) resulting in bending some dislocations. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Strain-relaxation in NH{sub 3}-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates

    Energy Technology Data Exchange (ETDEWEB)

    Koyama, T.; Onuma, T.; Chichibu, S.F. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); NICP, ERATO, Japan Science and Technology Agency (JST), Kawaguchi 332-0012 (Japan); Sugawara, M.; Uchinuma, Y. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Kaeding, J.F.; Sharma, R. [Department of Materials Engineering, University of California, Santa Barbara, CA 93106 (United States); Nakamura, S. [NICP, ERATO, Japan Science and Technology Agency (JST), Kawaguchi 332-0012 (Japan); Department of Materials Engineering, University of California, Santa Barbara, CA 93106 (United States)

    2006-05-15

    Temporal evolution of surface morphology in AlN epilayers grown by NH{sub 3}-source molecular beam epitaxy on the GaN/(0001) Al{sub 2}O{sub 3} epitaxial templates was correlated with changes in the degree of the residual strain and the layer thickness. They began to crack for the thickness as thin as 10 nm. However, atomic-layer step-and-terrace surface structures were maintained for the thickness up to 32 nm. Tensile biaxial stress decreased with further increase in the thickness due to the lattice relaxation, which caused surface roughening. An 1580-nm-thick, nearly strain-compensated AlN epilayer, of which threading dislocation density was reduced down to 6 x 10{sup 9} cm{sup -2}, exhibited excitonic photoluminescence peaks at 6.002 and 6.023 eV at 9 K and a near-band-edge peak at 5.872 eV at 293 K. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2011-01-15

    We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates

    OpenAIRE

    M. Niehle; Trampert, A; Albert, S; Bengoechea-Encabo, A.; Calleja, E.

    2015-01-01

    We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 11 2 ̄ 2 ) substrate surface by molecular beam epitaxy. For the pract...

  17. Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy

    Science.gov (United States)

    Duc, Tran Thien; Pozina, Galia; Amano, Hiroshi; Monemar, Bo; Janzén, Erik; Hemmingsson, Carl

    2016-07-01

    Deep levels in Mg-doped GaN grown by metal organic chemical vapor deposition (MOCVD), undoped GaN grown by MOCVD, and halide vapor phase epitaxy (HVPE)-grown GaN have been studied using deep level transient spectroscopy and minority charge carrier transient spectroscopy on Schottky diodes. One hole trap, labeled HT1, was detected in the Mg-doped sample. It is observed that the hole emission rate of the trap is enhanced by increasing electric field. By fitting four different theoretical models for field-assisted carrier emission processes, the three-dimensional Coulombic Poole-Frenkel (PF) effect, three-dimensional square well PF effect, phonon-assisted tunneling, and one-dimensional Coulombic PF effect including phonon-assisted tunneling, it is found that the one-dimensional Coulombic PF model, including phonon-assisted tunneling, is consistent with the experimental data. Since the trap exhibits the PF effect, we suggest it is acceptorlike. From the theoretical model, the zero field ionization energy of the trap and an estimate of the hole capture cross section have been determined. Depending on whether the charge state is -1 or -2 after hole emission, the zero field activation energy Ei 0 is 0.57 eV or 0.60 eV, respectively, and the hole capture cross section σp is 1.3 ×10-15c m2 or 1.6 ×10-16c m2 , respectively. Since the level was not observed in undoped GaN, it is suggested that the trap is associated with an Mg related defect.

  18. Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 10 1 ¯ ) semipolar GaN template

    Science.gov (United States)

    Li, Yueliang; Qi, Haoyuan; Meisch, Tobias; Hocker, Matthias; Thonke, Klaus; Scholz, Ferdinand; Kaiser, Ute

    2017-01-01

    In this work, I2-type basal-plane stacking faults (BSFs) were observed in In0.25Ga0.75N multiple quantum wells (MQWs) grown on a ( 10 1 ¯1 ) semipolar GaN template by high-resolution transmission electron microscopy. The structure and formation mechanisms of the I2-type BSFs at the GaN-InGaN interface were investigated in detail. The formation of the I2-type BSFs contributes to lattice mismatch accommodation within the InGaN QWs. Their density varies in different regions of the sample due to the inhomogeneous distribution of the In content in the InGaN layer. The relationship between the In content in the InxGa1-xN layer and the I2-type BSFs is discussed.

  19. Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template

    Institute of Scientific and Technical Information of China (English)

    Zhang Dong-Yan; Zheng Xin-He; Li Xue-Fei; Wu Yuan-Yuan; Wang Hui; Wang Jian-Feng; Yang Hui

    2012-01-01

    InGaN/GaN epilayers,which are grown on sapphire substrates by the metal-organic chemical-vapour deposition (MOCVD) method,are formed into nanorod arrays using inductively coupled plasma etching via self-assembled Ni nanomasks.The formation of nanorod arrays eliminates the tilt of the InGaN (0002) crystallographic plane with respect to its GaN bulk layer.Photoluninescence results show an apparent S-shaped dependence on temperature.The light extraction efficiency and intensity of photoluminescence emission at low temperature of less than 30 K for the nanorod arrays are enhanced by the large surface area,which increases the quenching effect because of the high density of surface states for the temperature above 30 K.Additionally,a red-shift for the InGaN/GaN nanorod arrays is observed due to the strain relaxation,which is confirmed by reciprocal space mapping measurements.

  20. Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

    Science.gov (United States)

    Ali, M.; Romanov, A. E.; Suihkonen, S.; Svensk, O.; Törmä, P. T.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2011-01-01

    We present the results of GaN re-growth on hexagonally patterned GaN templates. Sapphire was used as the original substrate and the samples were grown by metalorganic vapor phase epitaxy (MOVPE). The re-growth on the patterned templates results in the formation of voids at the GaN/sapphire interface. Our extensive scanning electron microscopy (SEM)-based experimental investigations show that the void shape can be controlled from nearly vertical to fully inclined configurations. It was found that the initial hexagon hole diameter plays a key role in determining the final profile of the void sidewalls. X-ray diffraction analysis of the GaN layers indicates that the layers with inclined sidewall voids have an improved crystalline quality. Knowledge of the void configurations in the GaN layers and a possibility to control their shape can help in enhancing light extraction from the light emitting structures.

  1. Taevo Gans / Ene Ammer

    Index Scriptorium Estoniae

    Ammer, Ene

    1998-01-01

    Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos

  2. Taevo Gans / Ene Ammer

    Index Scriptorium Estoniae

    Ammer, Ene

    1998-01-01

    Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos

  3. III-nitride grown on freestanding GaN nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yongjin; Zhu, Hongbo [Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003 (China); Hu, Fangren; Hane, Kazuhiro [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)

    2012-03-15

    We report here the epitaxial growth of III-nitride on the freestanding GaN nanostructures by molecular beam epitaxy growth. Various GaN nanostructures are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN nanostructures is removed from the backside to form the freestanding GaN slab, and the epitaxial growth of III-nitride by MBE is performed on the prepared GaN template. The selective growth takes place with the assistance of GaN nanostructures and generates hexagonal III-nitride pyramids. Thin epitaxial structures, depending on the shape and the size of GaN nanostructure, can produce the promising optical performance. This work opens the way to combine silicon micromachining with the epitaxial growth of III-nitride by MBE on GaN-on-silicon substrate for further integrated optics (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Brown, April [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the temporal variation of the GaN pseudodielectric function over the temperature range of 650 C to 850 C. The structural, morphological, and optical properties are also discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. MOCVD epitaxy of InAlN on different templates

    Institute of Scientific and Technical Information of China (English)

    Yun Lijun; Wei Tongbo; Yan Jianchang; Liu Zhe; Wang Junxi; Li Jinmin

    2011-01-01

    InAlN epilayers were grown on high quality GaN and AlN templates with the same growth parameters.Measurement results showed that two samples had the same In content of ~ 16%,while the crystal quality and surface topography of the InA1N epilayer grown on the AlN template,with 282.3" (002) full width at half maximum (FWHM) of rocking curve,313.5" (102) FWHM,surface roughness of 0.39 nm and V-pit density of 2.8 ×108 cm-2,were better than that of the InAlN epilayer grown on the GaN template,309.3",339.1",0.593 nm and 4.2 × 108 cm-2.A primary conclusion was proposed that both the crystal quality and the surface topography of the InAlN epilayer grown on the AlN template were better than that of the InAlN epilayer grown on the GaN template.Therefore,the AlN template was a better choice than the GaN template for getting high quality InA1N epilayers.

  6. Characterization of HVPE-Grown Thick GaAs Structures for IR and THz Generation

    Science.gov (United States)

    2006-01-01

    8. PERFORMING ORGANIZATION Electromagnetics Technology Branch, AFRURYHC, 80 Scon Drive, Hansc om AFB, MA REPORT 01731; ’ Fisica de la Materia...Yu3 I Air Force Research Laboratory, Hanscom AFB, MA 0173 I ’ Fisica de la Materia Condensada, ETSII, 4701 I Yalladolid, Spain ) E.L. Ginzton Laboratory...requirement for mm-thick epitax ial layers drives the use of HVPE over other techno logies such as molecular beam epitaxy (MBE) and organomet allic vapor phase

  7. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    OpenAIRE

    Wang Yongjin; Hu Fangren; Hane Kazuhiro

    2011-01-01

    Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place wit...

  8. GaN HEMTs

    Science.gov (United States)

    Anderson, Jonathan W.; Lee, Kyoung-Keun; Piner, Edwin L.

    2012-03-01

    Gallium nitride (GaN) has enormous potential for applications in high electron mobility transistors (HEMTs) used in RF and power devices. Intrinsic device properties such as high electron mobility, high breakdown voltage, very high current density, electron confinement in a narrow channel, and high electron velocity in the 2-dimensional electron gas of the HEMT structure are due in large part to the wide band gap of this novel semiconductor material system. This presentation discusses the properties of GaN that make it superior to other semiconductor materials, and outlines the research that will be undertaken in a new program at Texas State University to advance GaN HEMT technology. This program's aim is to further innovate the exceptional performance of GaN through improved material growth processes and epitaxial structure design.

  9. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

    Science.gov (United States)

    Oshima, Yuichi; Eri, Takeshi; Shibata, Masatomo; Sunakawa, Haruo; Kobayashi, Kenji; Ichihashi, Toshinari; Usui, Akira

    2003-01-01

    We have developed a novel technique for preparing large-scale freestanding GaN wafers. Hydride vapor phase epitaxy (HVPE) growth of thick GaN layer was performed on a GaN template with a thin TiN film on the top. After the cooling process of the HVPE growth, the thick GaN layer was easily separated from the template by the assistance of many voids generated around the TiN film. As a result, a freestanding GaN wafer was obtained. The wafer obtained had a diameter of 45 mm, and a mirror-like surface. The-full-width-at-half-maximum (FWHM) of (0002) and (10\\bar{1}0) peaks in the X-ray rocking curve profile were 60 and 92 arcsec, respectively. The dislocation density was evaluated at 5× 106 cm-3 by etch pit density measurement.

  10. Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

    KAUST Repository

    Wang, Ping

    2017-01-18

    Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

  11. Research on fabrication and properties of nanoporous GaN epilayers

    Institute of Scientific and Technical Information of China (English)

    WANG Xiaolong; YU Guanghui; WANG Xinzhong; LIN Chaotong; LEI Benliang; QI Ming; NOUET Gérard; RUTERANA Pierre; CHEN Jun

    2006-01-01

    Gallium nitride (GaN) epilayers with nanopore arrays were fabricated by inductive coupled plasma (ICP) etching using anodic aluminum oxide (AAO) as mask.Nanoporous AAO templates were formed by anodizing the Al films deposited on GaN epilayers.The diameter of the perforations in the AAO masks could be easily controlled by tuning the technique parameters of AAO fabrication process.Cl2/Ar and Cl2/He were employed as etching gas.Scanning electron microscopy (SEM) analysis shows that vertical nanoporous arrays with uniform distribution can directly be transferred from AAO masks to GaN films in some proper conditions.Photoluminescence (PL) spectra, X-ray diffraction (XRD) and Raman spectroscopy were applied to assess properties of the nanoporous GaN films with different average pore diameters and interpore distances.

  12. Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy

    Science.gov (United States)

    Akasaka, Tetsuya; Kobayashi, Yasuyuki; Kasu, Makoto

    2009-09-01

    Selective-area metalorganic vapor phase epitaxy of GaN has been investigated using the optimized growth conditions for the layer (Frank-van der Merwe) growth and GaN-template substrates with low dislocation density. The surface of a GaN hexagon with 16-µm diameter has a single wide terrace over almost the whole area (step-free surface), when there are no screw-type dislocations in the finite area. Step-free GaN hexagons grew in the two-dimensional nucleus growth mode and had approximately an eight times lower growth rate than that of a GaN film grown in the step-flow mode under the growth conditions used in this study.

  13. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

    OpenAIRE

    Hashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, Hideki

    2001-01-01

    Chemical and electrical properties of the surfaces of GaN and GaN/AlGaN heterostructures were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance–voltage, and current–voltage measurements. From in situ XPS study, relatively smaller band bending of 0.6 eV was seen at the GaN (2×2) surface grown by radio frequency-assisted molecular beam epitaxy on the metalorganic vapor phase epitaxy GaN template. After exposing the sample surface to air, strong band bending took...

  14. Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Wei-Kai Wang

    2017-01-01

    Full Text Available Approximately 4-μm-thick GaN epitaxial films were directly grown onto a GaN/sapphire template, sapphire, Si(111, and Si(100 substrates by high-temperature pulsed laser deposition (PLD. The influence of the substrate type on the crystalline quality, surface morphology, microstructure, and stress states was investigated by X-ray diffraction (XRD, photoluminescence (PL, atomic force microscopy (AFM, transmission electron microscopy (TEM, and Raman spectroscopy. Raman scattering spectral analysis showed a compressive film stress of −0.468 GPa for the GaN/sapphire template, whereas the GaN films on sapphire, Si(111, and Si(100 exhibited a tensile stress of 0.21, 0.177, and 0.081 GPa, respectively. Comparative analysis indicated the growth of very close to stress-free GaN on the Si(100 substrate due to the highly directional energetic precursor migration on the substrate’s surface and the release of stress in the nucleation of GaN films during growth by the high-temperature (1000 °C operation of PLD. Moreover, TEM images revealed that no significant GaN meltback (Ga–Si etching process was found in the GaN/Si sample surface. These results indicate that PLD has great potential for developing stress-free GaN templates on different substrates and using them for further application in optoelectronic devices.

  15. Nucleation phenomena during molecular beam epitaxy of GaN observed by line-of-sight quadrupole mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Koblmueller, G.; Averbeck, R.; Riechert, H. [Infineon Technologies AG, Corporate Research Photonics, Otto-Hahn-Ring 6, 81739 Munich (Germany); Pongratz, P. [Vienna University of Technology, Institute of Solid State Physics, Wiedner Hauptstrasse 8-10, 1040 Vienna (Austria)

    2002-12-16

    We investigate nucleation and growth phenomena during molecular beam epitaxy of GaN on sapphire, 6H-SiC and GaN templates using in situ line-of-sight quadrupole mass spectrometry. Moreover, this method allows the quantitative study of nucleation phenomena by monitoring desorption processes. Heteroepitaxial growth of GaN on sapphire and 6H-SiC faces a high energy barrier to nucleation giving rise to a substantial Ga desorption during the initial phase of nucleation. The amount of initial Ga desorption in heteroepitaxy is independent of the chosen substrate material and is as high as 8 {+-} 1.5 nm equivalent GaN thickness. Once critical-sized islands have nucleated they grow three-dimensional (3D) leading to a quadratic increase of the GaN coverage and finally to a steady growth rate after coalescence, as also determined by Rutherford backscattering and atomic force microscopy. In contrast, homoepitaxy on Ga- and N-face GaN templates is distinguished by immediate nucleation. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  16. Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions

    Science.gov (United States)

    Aseev, P.; Gačević, Ž.; Torres-Pardo, A.; González-Calbet, J. M.; Calleja, E.

    2016-06-01

    Series of GaN nanowires (NW) with controlled diameters (160-500 nm) and heights (420-1100 nm) were homoepitaxially grown on three different templates: GaN/Si(111), GaN/AlN/Si(111), and GaN/sapphire(0001). Transmission electron microscopy reveals a strong influence of the NW diameter on dislocation filtering effect, whereas photoluminescence measurements further relate this effect to the GaN NWs near-bandgap emission efficiency. Although the templates' quality has some effects on the GaN NWs optical and structural properties, the NW diameter reduction drives the dislocation filtering effect to the point where a poor GaN template quality becomes negligible. Thus, by a proper optimization of the homoepitaxial GaN NWs growth, the propagation of dislocations into the NWs can be greatly prevented, leading to an exceptional crystal quality and a total dominance of the near-bandgap emission over sub-bandgap, defect-related lines, such as basal stacking faults and so called unknown exciton (UX) emission. In addition, a correlation between the presence of polarity inversion domain boundaries and the UX emission lines around 3.45 eV is established.

  17. Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Aseev, P., E-mail: pavel.aseev@isom.upm.es, E-mail: gacevic@isom.upm.es; Gačević, Ž., E-mail: pavel.aseev@isom.upm.es, E-mail: gacevic@isom.upm.es; Calleja, E. [ISOM-ETSIT, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Torres-Pardo, A.; González-Calbet, J. M. [Departamento de Química Inorgánica, Facultad de Químicas, Universidad Complutense (UCM), CEI Moncloa, 28040 Madrid (Spain)

    2016-06-20

    Series of GaN nanowires (NW) with controlled diameters (160–500 nm) and heights (420–1100 nm) were homoepitaxially grown on three different templates: GaN/Si(111), GaN/AlN/Si(111), and GaN/sapphire(0001). Transmission electron microscopy reveals a strong influence of the NW diameter on dislocation filtering effect, whereas photoluminescence measurements further relate this effect to the GaN NWs near-bandgap emission efficiency. Although the templates' quality has some effects on the GaN NWs optical and structural properties, the NW diameter reduction drives the dislocation filtering effect to the point where a poor GaN template quality becomes negligible. Thus, by a proper optimization of the homoepitaxial GaN NWs growth, the propagation of dislocations into the NWs can be greatly prevented, leading to an exceptional crystal quality and a total dominance of the near-bandgap emission over sub-bandgap, defect-related lines, such as basal stacking faults and so called unknown exciton (UX) emission. In addition, a correlation between the presence of polarity inversion domain boundaries and the UX emission lines around 3.45 eV is established.

  18. Formation of aligned CrN nanoclusters in Cr-delta-doped GaN

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Y K; Kimura, S; Emura, S; Hasegawa, S; Asahi, H [Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)], E-mail: zhou21@sanken.osaka-u.ac.jp

    2009-02-11

    Cr-delta-doped GaN layers were grown by radio-frequency plasma-assisted molecular-beam epitaxy on GaN template substrates. Cr flux was supplied without nitrogen flow during Cr-delta-doping. Cr incorporation into a narrow thin layer region was confirmed with the depth profile measured by secondary ion mass spectrometry. Structural properties and Cr atom alignments were studied with transmission electron microscopy. It was found that Cr-delta-doped GaN layers were coherently grown with Cr or CrGa nanoclusters in the delta-doped region for low temperature growth (350, 500 deg. C). It was also found that aligned CrN nanoclusters (approximately 5 nm vertical thickness) with NaCl-type structure were formed in the delta-doped region for the growth at 700 deg. C.

  19. Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a-Plane and Semipolar (11(2)2) GaN

    Institute of Scientific and Technical Information of China (English)

    XU Sheng-Rui; HAO Yue; LIN Zhi-Yu; XUE Xiao-Yong; LIU Zi-Yang; MA Jun-Cai; JIANG Teng; MAO Wei; WANG Dang-Hui; ZHANG Jin-Cheng

    2012-01-01

    Nonpolar (11-20) and semipolar (11222) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs). Transmission electron microscopy reveals that the density of BSFs for the semipolar (11-22) and nonpolar a-plane GaN template is 3×105cm-1 and 8×10 cm'1, respectively. The semipolar (11-22) GaN shows an arrowhead-like structure, and the nonpolar a-plane GaN has a much smoother morphology with a streak along the c-axis. Both nonpolar (11-20) and semipolar (11-22) GaN have very strong BSF luminescence due to the optically active character of the BSFs.%Nonpolar (11(2)0) and semipolar (11(2)2) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs).Transmission electron microscopy reveals that the density of BSFs for the semipolar (11(2)2) and nonpolar a-plane GaN template is 3x105 cm-1 and 8×105 cm-1,respectively.The semipolar (11(2)2) GaN shows an arrowhead-like structure,and the nonpolar a-plane GaN has a much smoother morphology with a streak along the c-axis.Both nonpolar (11(2)0) and semipolar (11(2)2) GaN have very strong BSF luminescence due to the optically active character of the BSFs.

  20. Code Generation with Templates

    CERN Document Server

    Arnoldus, Jeroen; Serebrenik, A

    2012-01-01

    Templates are used to generate all kinds of text, including computer code. The last decade, the use of templates gained a lot of popularity due to the increase of dynamic web applications. Templates are a tool for programmers, and implementations of template engines are most times based on practical experience rather than based on a theoretical background. This book reveals the mathematical background of templates and shows interesting findings for improving the practical use of templates. First, a framework to determine the necessary computational power for the template metalanguage is presen

  1. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Wang Yongjin

    2011-01-01

    Full Text Available Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE. Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. PACS 81.05.Ea; 81.65.Cf; 81.15.Hi.

  2. XPS investigation of ion beam induced conversion of GaAs(0 0 1) surface into GaN overlayer

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Praveen [Surface Physics and Nanostructure Group, National Physical Laboratory, New Delhi 110012 (India); Department of Physics, Indian Institute of Technology, New Delhi 110016 (India); Kumar, Mahesh; Govind [Surface Physics and Nanostructure Group, National Physical Laboratory, New Delhi 110012 (India); Mehta, B.R. [Department of Physics, Indian Institute of Technology, New Delhi 110016 (India); Shivaprasad, S.M., E-mail: smsprasad@jncasr.ac.in [Jawaharlal Nehru Centre for Advanced Scientific Research, International Center for Material Science and Chemistry and Physics Materials Unit, Jakkur, 560064 Bangalore, Karnataka (India)

    2009-10-30

    For the advance of GaN based optoelectronic devices, one of the major barriers has been the high defect density in GaN thin films, due to lattice parameter and thermal expansion incompatibility with conventional substrates. Of late, efforts are focused in fine tuning epitaxial growth and in search for a low temperature method of forming low defect GaN with zincblende structure, by a method compatible to the molecular beam epitaxy process. In principle, to grow zincblende GaN the substrate should have four-fold symmetry and thus zincblende GaN has been prepared on several substrates including Si, 3C-SiC, GaP, MgO, and on GaAs(0 0 1). The iso-structure and a common shared element make the epitaxial growth of GaN on GaAs(0 0 1) feasible and useful. In this study ion-induced conversion of GaAs(0 0 1) surface into GaN at room temperature is optimized. At the outset a Ga-rich surface is formed by Ar{sup +} ion bombardment. Nitrogen ion bombardment of the Ga-rich GaAs surface is performed by using 2-4 keV energy and fluence ranging from 3 x 10{sup 13} ions/cm{sup 2} to 1 x 10{sup 18} ions/cm{sup 2}. Formation of surface GaN is manifested as chemical shift. In situ core level and true secondary electron emission spectra by X-ray photoelectron spectroscopy are monitored to observe the chemical and electronic property changes. Using XPS line shape analysis by deconvolution into chemical state, we report that 3 keV N{sub 2}{sup +} ions and 7.2 x 10{sup 17} ions/cm{sup 2} are the optimal energy and fluence, respectively, for the nitridation of GaAs(0 0 1) surface at room temperature. The measurement of electron emission of the interface shows the dependence of work function to the chemical composition of the interface. Depth profile study by using Ar{sup +} ion sputtering, shows that a stoichiometric GaN of 1 nm thickness forms on the surface. This, room temperature and molecular beam epitaxy compatible, method of forming GaN temperature can serve as an excellent template for

  3. Anelasticity of GaN Epitaxial Layer in GaN LED

    Science.gov (United States)

    Chung, C. C.; Yang, C. T.; Liu, C. Y.

    2016-10-01

    In this work, the anelasticity of the GaN layer in the GaN light-emitting-diode device was studied. The present results show that the forward-voltage of GaN LED increases with time, as the GaN light-emitting-diode was maintained at a constant temperature of 100 °C. We found that the increase of the forward-voltage with time attributes to the delay-response of the piezoelectric fields (internal electrical fields in GaN LED device). And, the delay-response of the internal electrical fields with time is caused by the anelasticity (time-dependent strain) of the GaN layer. Therefore, using the correlation of strain-piezoelectric-forward voltage, a plot of thermal strain of the GaN layer against time can be obtained by measuring the forward-voltage of the studied GaN LED against time. With the curves of the thermal strain of GaN epi-layers versus time, the anelasticity of the GaN compound can be studied. The key anelasticity parameter, characteristic relaxation time, of the GaN is defined to be 2623.76 min in this work.

  4. Growth of planar semipolar GaN via epitaxial lateral overgrowth on pre-patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Schwaiger, Stephan; Argut, Ilona; Wunderer, Thomas; Lipski, Frank; Roesch, Rudolf; Scholz, Ferdinand [Institute of Optoelectronics, University of Ulm (Germany)

    2010-07-01

    We report on the growth of planar semipolar GaN on pre-patterned sapphire substrates via metalorganic vapor phase epitaxy. The sapphire templates were structured with grooves perpendicular to the c-direction of the crystal. Using appropriate growth parameters semipolar GaN can be grown from the c-plane like sidewall of the patterned sapphire, resulting in a flat and planar semipolar surface. Hence, this method allows the growth of semipolar GaN on large areas. Scanning electron, transmission electron and atomic force microscopy measurements show an atomically flat surface. Photoluminescence spectroscopy spectra show the high quality of the material since the spectra are dominated by the near band edge emission but still exhibit some defect related contributions. Furthermore high resolution X-ray diffraction rocking curve measurements result in small full widths at half maximum of less than 400 arcsec for both, the symmetrical reflection and the asymmetrical (0002) reflection.

  5. Graphene-Oxide-Assisted Synthesis of GaN Nanosheets as a New Anode Material for Lithium-Ion Battery.

    Science.gov (United States)

    Sun, Changlong; Yang, Mingzhi; Wang, Tailin; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng

    2017-08-16

    As the most-studied III-nitride, theoretical researches have predicted the presence of gallium nitride (GaN) nanosheets (NSs). Herein, a facile synthesis approach is reported to prepare GaN NSs using graphene oxide (GO) as sacrificial template. As a new anode material of Li-ion battery (LIBs), GaN NSs anodes deliver the reversible discharge capacity above 600 mA h g(-1) at 1.0 A g(-1) after 1000 cycles, and excellent rate performance at current rates from 0.1 to 10 A g(-1). These results not only extend the family of 2D materials but also facilitate their use in energy storage and other applications.

  6. Bandgap engineering of GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ming, Bang-Ming; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn, E-mail: yamcy@csrc.ac.cn [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Computational Science Research Center, Beijing, 100094 (China); Yam, Chi-Yung, E-mail: wrz@bjut.edu.cn, E-mail: yamcy@csrc.ac.cn [Beijing Computational Science Research Center, Beijing, 100094 (China); Xu, Li-Chun [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Lau, Woon-Ming [Beijing Computational Science Research Center, Beijing, 100094 (China); Chengdu Green Energy and Green Manufacturing Technology R& D Center, Chengdu, Sichuan, 610207 (China)

    2016-05-15

    Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.

  7. Epitaxial growth of aligned GaN nanowires and nanobridges

    OpenAIRE

    2007-01-01

    Homo-epitaxialy grown aligned GaN nanowires were prepared on crystalline GaN mesas. The GaN nanowires showed preferential growth along the 〈100〉 direction (m-axis direction). By using selectively positioned and crystallographically well defined GaN epitaxial lateral overgrowth (ELO) mesas as substrate, we obtained horizontally aligned GaN nanowires, in comb-like arrays and hexagonal network interconnecting the ELO mesas. Preliminary testing of the nanomechanical behavior of horizontal nanowir...

  8. Bulk ammonothermal GaN

    Science.gov (United States)

    Dwiliński, R.; Doradziński, R.; Garczyński, J.; Sierzputowski, L. P.; Puchalski, A.; Kanbara, Y.; Yagi, K.; Minakuchi, H.; Hayashi, H.

    2009-05-01

    In this work, results of structural characterization of high-quality ammonothermal GaN are presented. Besides expected low dislocation density (being of the order of 10 3 cm -2) the most interesting feature seems perfect flatness of the crystal lattice of studied crystals. Regardless the size of crystals, lattice curvature radius exceeds 100 m, whereas better crystals reveal radius of several hundred meters and the best above 1000 m. Excellent crystallinity manifests in very narrow X-ray diffraction peaks of full-width at half-maximum (FWHM) values about 16 arcsec.

  9. Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy

    Science.gov (United States)

    Barchuk, M.; Lukin, G.; Zimmermann, F.; Röder, C.; Motylenko, M.; Pätzold, O.; Heitmann, J.; Kortus, J.; Rafaja, D.

    2016-12-01

    High-temperature vapor phase epitaxy (HTVPE) is a physical vapor transport technology for a deposition of gallium nitride (GaN) layers. However, little is known about the influence of the deposition parameters on the microstructure of the layers. In order to fill this gap, the influence of the ammonia (NH3) flow applied during the HTVPE growth on the microstructure of the deposited GaN layers is investigated in this work. Although the HTVPE technology is intended to grow GaN layers on foreign substrates, the GaN layers under study were grown on GaN templates produced by metal organic vapor phase epitaxy in order to be able to separate the growth defects from the defects induced by the lattice misfit between the foreign substrate and the GaN layer. The microstructure of the layers is characterized by means of high-resolution x-ray diffraction (XRD), transmission electron microscopy and photoluminescence. In samples deposited at low ammonia flow, planar defects were detected, along which the nitrogen atoms are found to be substituted by impurity atoms. The interplay between these planar defects and the threading dislocations is discussed. A combination of XRD and micro-Raman spectroscopy reveals the presence of compressive residual stress in the samples.

  10. Templating mesoporous zeolites

    DEFF Research Database (Denmark)

    Egeblad, Kresten; Christensen, Christina Hviid; Kustova, Marina

    2008-01-01

    The application of templating methods to produce zeolite materials with hierarchical bi- or trimodal pore size distributions is reviewed with emphasis on mesoporous materials. Hierarchical zeolite materials are categorized into three distinctly different types of materials: hierarchical zeolite...... crystals, nanosized zeolite crystals, and supported zeolite crystals. For the pure zeolite materials in the first two categories, the additional meso- or macroporosity can be classified as being either intracrystalline or intercrystalline, whereas for supported zeolite materials, the additional porosity...... originates almost exclusively from the support material. The methods for introducing mesopores into zeolite materials are discussed and categorized. In general, mesopores can be templated in zeolite materials by use of solid templating, supramolecular templating, or indirect templating...

  11. GaN three dimensional nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Dmitriev, V.; Irvin, K. [Cree Research, Inc., Durham, NC (United States); Zubrilov, A.; Tsvetkov, D.; Nikolaev, V. [Cree Research EED, St. Petersburg (Russian Federation); Jakobson, M.; Nelson, D.; Sitnikova, A. [A.F. Ioffe Inst., St. Petersburg (Russian Federation)

    1996-11-01

    The authors report on the growth and characterization of three dimensional nanoscale structures of GaN. GaN dots were grown by metal organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. The actual size of the dots measured by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) ranged from {approximately}20 nm to more than 2 {micro}m. The average dot density ranged from 10{sup 7} to 10{sup 9} cm{sup {minus}2}. The single crystal structure of the dots was verified by reflectance high energy electron diffraction (HEED) and TEM. Cathodoluminescence (CL) and photoluminescence (PL) of the dots were studied at various temperatures and excitation levels. The PL and CL edge peak for the GaN dots exhibited a blue shift as compared with edge peak position for continuous GaN layers grown on SiC.

  12. Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106 cm-2 range by novel two-side hydride vapor-phase epitaxial growth

    Science.gov (United States)

    Fujikura, Hajime; Konno, Taichiro

    2017-10-01

    Large GaN templates with high flatness (i.e., negligible wafer bowing and smooth as-grown surfaces) and low threading dislocation densities (TTDs) were fabricated by a novel two-side hydride vapor-phase epitaxial (HVPE) growth, beginning with deposition of polycrystalline GaN on the rear side of the wafer. Appropriate gas-flow management realized by our homemade HVPE system permitted the growth of a GaN layer with a smooth as-grown surface and excellent thickness uniformity on the front surfaces of 4- or 6-inch patterned sapphire substrates (PSSs). However, when the grown thickness exceeded 20 μm, single-side HVPE-growth induced fractures in GaN crystals. The fracture resistance of the GaN increased markedly when it was in a cleavage-resistant polycrystalline form (poly-GaN), permitting its growth to a thickness of 100 μm. In the presence of a back-side poly-GaN layer, extremely thick GaN crystal layers could be grown on the front side without fractures. An 80-μm-thick GaN template fabricated by two-side growth on a 4-inch PSS had a device-quality surface, negligible bowing, and low TDD (7 × 106 cm-2). Issues of high fabrication costs, unavailability of large-size wafers, and large off-angle variations associated with native GaN wafers could be overcome by using our high-quality GaN templates as alternative substrates.

  13. The Trouble With Templates

    CERN Document Server

    Sampson, Laura; Yunes, Nicolas

    2013-01-01

    Waveform templates are a powerful tool for extracting and characterizing gravitational wave signals, acting as highly restrictive priors on the signal morphologies that allow us to extract weak events buried deep in the instrumental noise. The templates map the waveform shapes to physical parameters, thus allowing us to produce posterior probability distributions for these parameters. However, there are attendant dangers in using highly restrictive signal priors. If strong field gravity is not accurately described by General Relativity (GR), then using GR templates may result in fundamental bias in the recovered parameters, or even worse, a complete failure to detect signals. Here we study such dangers, concentrating on three distinct possibilities. First, we show that there exist modified theories compatible with all existing tests that would fail to be detected by the LIGO/Virgo network using searches based on GR templates, but which would be detected using a one parameter post-Einsteinian extension. Second...

  14. E3 Charter Template

    Science.gov (United States)

    This is a charter template which includes decisions made during the project planning phase, as well as local project goals, a communication strategy, an outreach strategy, distribution of responsibilities and a schedule.

  15. images_template

    Data.gov (United States)

    National Aeronautics and Space Administration — Images for the website template go here. It will not change their names or locations, but will hopefully help to organize them. Oh, but for a directory structure...

  16. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  17. Synthetic Strategies and Applications of GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Guoquan Suo

    2014-01-01

    Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

  18. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

    DEFF Research Database (Denmark)

    Rozhavskaia, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey

    2017-01-01

    crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si doping eliminates these defects in the case of growth on SiC templates...

  19. Theoretical study of gallium nitride molecules, GaN2 and GaN4.

    Science.gov (United States)

    Tzeli, Demeter; Theodorakopoulos, Giannoula; Petsalakis, Ioannis D

    2008-09-18

    The electronic and geometric structures of gallium dinitride GaN 2, and gallium tetranitride molecules, GaN 4, were systematically studied by employing density functional theory and perturbation theory (MP2, MP4) in conjunction with the aug-cc-pVTZ basis set. In addition, for the ground-state of GaN 4( (2)B 1) a density functional theory study was carried out combining different functionals with different basis sets. A total of 7 minima have been identified for GaN 2, while 37 structures were identified for GaN 4 corresponding to minima, transition states, and saddle points. We report geometries and dissociation energies for all the above structures as well as potential energy profiles, potential energy surfaces and bonding mechanisms for some low-lying electronic states of GaN 4. The dissociation energy of the ground-state GaN 2 ( X (2)Pi) is 1.1 kcal/mol with respect to Ga( (2)P) + N 2( X (1)Sigma g (+)). The ground-state and the first two excited minima of GaN 4 are of (2)B 1( C 2 v ), (2)A 1( C 2 v , five member ring), and (4)Sigma g (-)( D infinityh ) symmetry, respectively. The dissociation energy ( D e) of the ground-state of GaN 4, X (2)B 1, with respect to Ga( (2)P) + 2 N 2( X (1)Sigma g (+)), is 2.4 kcal/mol, whereas the D e of (4)Sigma g (-) with respect to Ga( (4)P) + 2 N 2( X (1)Sigma g (+)) is 17.6 kcal/mol.

  20. Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001) 1 x 1 surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Orani, D.; Rubini, S.; Pelucchi, E.; Bonanni, B. [Laboratorio Nazionale TASC-INFM, Area di Ricerca, S.S. 14, Km. 163.5, 34012 Trieste (Italy); Piccin, M. [Laboratorio Nazionale TASC-INFM, Area di Ricerca, S.S. 14, Km. 163.5, 34012 Trieste (Italy); Also with Dipartimento di Fisica, Universita' di Trieste, 34127 Trieste (Italy); Franciosi, A. [Laboratorio Nazionale TASC-INFM, Area di Ricerca, S.S. 14, Km. 163.5, 34012 Trieste (Italy); Passaseo, A.; Cingolani, R. [INFM e Dipartimento di Scienza dei Materiali, Universita' di Lecce, Via per Arnesano, 73100 Lecce (Italy); Khan, A. [Department of Electrical and Computer Engineering, University of South Carolina, Columbia, SC 29208 (United States)

    2005-04-01

    GaN(0001) epilayers were fabricated by rf-plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 x 2 reconstruction of the Ga-face during growth and the 1 x 1 reconstruction upon cooling. On such surfaces, Al/n-GaN and Au/n-GaN junctions were fabricated in-situ by molecular beam epitaxy. X-ray photoemission spectroscopy studies allowed us to determine n-type Schottky barrier heights of 0.61{+-}0.06 and 0.98{+-}0.06 eV, respectively, for the two types of epitaxial junctions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Selective area growth of GaN nanostructures: A key to produce high quality (11-20) a-plane pseudo-substrates

    Science.gov (United States)

    Albert, S.; Bengoechea-Encabo, A.; Zuniga-Perez, J.; de Mierry, P.; Val, P.; Sanchez-Garcia, M. A.; Calleja, E.

    2014-09-01

    Selective area growth of GaN nanostructures was performed on (11-20) a-plane GaN/sapphire templates. The dominant lateral growth rate along the in-plane c-direction produces the coalescence of the individual nanostructures into a continuous film. Photoluminescence measurements show the appearance of donor-bound and free exciton emissions in individual nanostructures, pointing towards an improvement of the material quality as compared to the original template. Upon nanostructures coalescence a decrease of the full width half maximum value, down to 2 meV, is observed. These results reveal the high quality of the coalesced film, opening the way to fabricate high quality, non-polar GaN pseudo-substrates.

  2. Joomla! 3 template essentials

    CERN Document Server

    Frankowski, Pawel

    2013-01-01

    Using this hands-on, step-by step tutorial filled with practical examples, the readers will be able to create beautiful templates and themes for your websites that will make them stand out from others.This book is written for all of you who wish to create your own unique templates for Joomla! 3.x. This book can be used by Joomla! administrators or visual designers (with no programming experience) or those of you who are used to working with common web developer tools like HTML/CSS editors for coding purposes. You would need basic knowledge of Joomla! and some knowledge of CSS and HTML.

  3. Computing layouts with deformable templates

    KAUST Repository

    Peng, Chihan

    2014-07-27

    In this paper, we tackle the problem of tiling a domain with a set of deformable templates. A valid solution to this problem completely covers the domain with templates such that the templates do not overlap. We generalize existing specialized solutions and formulate a general layout problem by modeling important constraints and admissible template deformations. Our main idea is to break the layout algorithm into two steps: a discrete step to lay out the approximate template positions and a continuous step to refine the template shapes. Our approach is suitable for a large class of applications, including floorplans, urban layouts, and arts and design. Copyright © ACM.

  4. Template Composite Dark Matter

    DEFF Research Database (Denmark)

    Drach, Vincent; Hietanen, Ari; Pica, Claudio

    2015-01-01

    We present a non perturbative study of SU(2) gauge theory with two fundamental Dirac flavours. We discuss how the model can be used as a template for composite Dark Matter (DM). We estimate one particular interaction of the DM candidate with the Standard Model : the interaction through photon...

  5. Template Composite Dark Matter

    DEFF Research Database (Denmark)

    Drach, Vincent; Hietanen, Ari; Pica, Claudio

    2015-01-01

    We present a non perturbative study of SU(2) gauge theory with two fundamental Dirac flavours. We discuss how the model can be used as a template for composite Dark Matter (DM). We estimate one particular interaction of the DM candidate with the Standard Model : the interaction through photon...

  6. Biometric template revocation

    Science.gov (United States)

    Arndt, Craig M.

    2004-08-01

    Biometric are a powerful technology for identifying humans both locally and at a distance. In order to perform identification or verification biometric systems capture an image of some biometric of a user or subject. The image is then converted mathematical to representation of the person call a template. Since we know that every human in the world is different each human will have different biometric images (different fingerprints, or faces, etc.). This is what makes biometrics useful for identification. However unlike a credit card number or a password to can be given to a person and later revoked if it is compromised and biometric is with the person for life. The problem then is to develop biometric templates witch can be easily revoked and reissued which are also unique to the user and can be easily used for identification and verification. In this paper we develop and present a method to generate a set of templates which are fully unique to the individual and also revocable. By using bases set compression algorithms in an n-dimensional orthogonal space we can represent a give biometric image in an infinite number of equally valued and unique ways. The verification and biometric matching system would be presented with a given template and revocation code. The code will then representing where in the sequence of n-dimensional vectors to start the recognition.

  7. Growth and characterisation of GaN

    CERN Document Server

    Li, T

    2002-01-01

    This thesis describes mainly the studies on growth mechanism of GaN in UHV-MOVPE process, and structural and optical properties of As-doped GaN films grown by PA-MBE. In a novel Thomas Swan growth chamber, we have grown GaN films on Si substrates using TEGa, plasma nitrogen and ammonia. Using a combination of in-situ optical reflectivity and mass spectrometry, we have investigated the parameters controlling the growth process of UHV-MOVPE. In particular we have used sup 1 sup 5 N in order to distinguish gas phase species containing N from those associated purely with metal-organics. We found the surface pyrolysis of TEGa is the rate limiting step, which is similar to GaAs grown by CBE. We also identify the parasitic reactions costing the active nitrogen from plasma, which in turn limits the growth rate. Using Philips X' pert MRD, we have investigated the structural properties of As-doped GaN epitaxial films on sapphire grown by PA-MBE including phase, lattice parameters and mosacity. We have also studied the ...

  8. GaN Micromechanical Resonators with Meshed Metal Bottom Electrode

    Directory of Open Access Journals (Sweden)

    Azadeh Ansari

    2015-03-01

    Full Text Available This work describes a novel architecture to realize high-performance gallium nitride (GaN bulk acoustic wave (BAW resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111 substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W/silicon dioxide (SiO2 forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient (d33 for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF2 etch and therefore eliminating the need for backside lithography and etching.

  9. GaN membrane MSM ultraviolet photodetectors

    Science.gov (United States)

    Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

    2006-12-01

    GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

  10. Manufacturing ontology through templates

    Directory of Open Access Journals (Sweden)

    Diciuc Vlad

    2017-01-01

    Full Text Available The manufacturing industry contains a high volume of knowhow and of high value, much of it being held by key persons in the company. The passing of this know-how is the basis of manufacturing ontology. Among other methods like advanced filtering and algorithm based decision making, one way of handling the manufacturing ontology is via templates. The current paper tackles this approach and highlights the advantages concluding with some recommendations.

  11. The Watermark Template Attack

    OpenAIRE

    Herrigel, Alexander; Voloshynovskyy, Svyatoslav; Rytsar, Yuriy

    2001-01-01

    This paper presents a new attack, called the watermark template attach, for watermarked images. In contrast to the Stirmark benchmark, this attack does not severely reduce the quality of the image. This attack maintains, therefore, the commercial value of the watermarked image. In contrast to previous approaches, it is not the aim of the attack to change the statistics of embedded watermarks fooling the detection process but to utilize specific concepts that have been recently developed for m...

  12. GaN Nanowire Arrays for High-Output Nanogenerators

    KAUST Repository

    Huang, Chi-Te

    2010-04-07

    Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.

  13. Gallium Nitride (GaN) High Power Electronics (FY11)

    Science.gov (United States)

    2012-01-01

    for HPE GaN high electron mobility transistors ( HEMTs ) compared to SiC metal-oxide-semiconductor field effect transistors (MOSFETs). Although a few...Figure 16. Asymmetric rocking curve for an HVPE film grown on an HVPE substrate. ............19 Figure 17. Schematic of a GaN /AlGaN HEMT structure grown...frequency (RF) HEMTs . These considerable investments can be leveraged for GaN HPE. Some people are concerned about the relative scarcity of gallium

  14. Temperature Dependence of GaN HEMT Small Signal Parameters

    Science.gov (United States)

    2011-11-01

    original work is properly cited. This study presents the temperature dependence of small signal parameters of GaN /SiC HEMTs across the 0–150◦C range...the performance of GaN /SiC device, two state-of-the-art AlGaN/ GaN HEMT devices were characterized at −25, 25, 75, and 125◦C base plate (on-wafer...number. 1. REPORT DATE NOV 2011 2. REPORT TYPE 3. DATES COVERED 00-00-2011 to 00-00-2011 4. TITLE AND SUBTITLE Temperature Dependence of GaN HEMT

  15. Novel oxide buffer approach for GaN integration on Si(111) platform through Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bi-layer

    Energy Technology Data Exchange (ETDEWEB)

    Tarnawska, Lidia

    2012-12-19

    Motivation: Preparation of GaN virtual substrates on large-scale Si wafers is intensively pursued as a cost-effective approach for high power/high frequency electronics (HEMT's etc.) and optoelectronic applications (LED, LASER). However, the growth of high quality GaN layers on Si is hampered by several difficulties mainly related to a large lattice mismatch (-17%) and a huge difference in the thermal expansion coefficient (56%). As a consequence, GaN epitaxial layers grown on Si substrates show a high number of defects (threading dislocations etc.), which severely deteriorate the overall quality of the GaN films. Additionally, due to the different thermal expansion coefficients of the substrate and the film, um-thick GaN layers crack during post-growth cooling. To solve these integration problems, different semiconducting (e.g. AlN, GaAs, ZnO, HfN) and insulating (e.g. Al{sub 2}O{sub 3}, MgO, LiGaO{sub 2}) buffer layers, separating the Si substrate from the GaN film, are applied. Goal: In this thesis, a novel buffer approach for the integration of GaN on Si is proposed and investigated. The new approach employs Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bilayer templates as a step-graded buffer to reduce the lattice mismatch between GaN and the Si(111) substrate. According to the bulk crystal lattices, since the Y{sub 2}O{sub 3} has an in-plane lattice misfit of -2% to Si, Sc{sub 2}O{sub 3} -7% to Y{sub 2}O{sub 3}, the lattice misfit between GaN and the substrate can be theoretically reduced by about 50% from -17% (GaN/Si) to -8% (GaN/Sc{sub 2}O{sub 3}). Experimental: The GaN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) heterostructures are prepared in a multichamber molecular beam epitaxy system on 4 inch Si(111) wafers. In order to obtain complete information on the structural quality of the oxide buffer as well as the GaN layer, synchrotron- and laboratory-based X-ray diffraction, transmission electron microscopy and photoluminescence measurements are performed. The

  16. Amphoteric arsenic in GaN

    CERN Document Server

    Wahl, U; Araújo, J P; Rita, E; Soares, JC

    2007-01-01

    We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive $^{73}$As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As$\\scriptstyle_{Ga}\\,$ " anti-sites ” are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called “ miscibility gap ” in ternary GaAs$\\scriptstyle_{1-x}$N$\\scriptstyle_{x}$ compounds, which cannot be grown with a single phase for values of $x$ in the range 0.1<${x}$< 0.99.

  17. Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

    Institute of Scientific and Technical Information of China (English)

    CHEN; Jun(陈俊); ZHANG; Shuming(张书明); ZHANG; Baoshun(张宝顺); ZHU; Jianjun(朱建军); FENG; Gan(冯淦); DUAN; Lihong(段俐宏); WANG; Yutian(王玉田); YANG; Hui(杨辉); ZHENG; Wenchen(郑文琛)

    2003-01-01

    The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on α-Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.

  18. The Cadastral Template Project

    DEFF Research Database (Denmark)

    Enemark, Stig; Steudler, Daniel; Williamson, Ian P.

    2004-01-01

      While many country reports have been compiled in the area of land administration over the last decade, there has not much attention been given to the basic cadastral issues. As a result, one of the objectives of Working Group 3 ?Cadastre? of the PCGIAP is the establishment of a cadastral template....... The work of the PCGIAP-Working Group 3 ?Cadastre? is being done in collaboration with Comission 7 ?Cadastre and Land Management? of the International Federation of Surveyors (FIG), which has extensive experience in comparative cadastral studies. This article describes the creation and the content...

  19. MOVPE growth of position-controlled InGaN / GaN core-shell nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Mandl, Martin [Osram Opto Semiconductors GmbH, Regensburg (Germany); Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Schimpke, Tilman; Binder, Michael; Galler, Bastian; Lugauer, Hans-Juergen; Strassburg, Martin [Osram Opto Semiconductors GmbH, Regensburg (Germany); Wang, Xue; Ledig, Johannes; Ehrenburg, Milena; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Kong, Xiang; Trampert, Achim [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2013-07-01

    Core-shell group III-nitride nano- and microrods (NAMs) enable a significant increase of the active layer area by exploiting the non-polar side facets (m-planes) and thus can potentially contribute to mitigating the so-called efficiency droop in LEDs. GaN NAMs exhibiting high aspect ratios were grown in a production-type MOVPE system. Low V/III ratio, hydrogen-rich carrier gas mixture and surfactants supported the 3D growth of the pencil-shape n-type GaN core. Desired narrow distributions of shape, diameter and height were achieved. The arrangement of the NAMs was controlled by patterns etched into SiO{sub 2} masks deposited on GaN templates. The active layer (InGaN/GaN SQW and MQWs) and the layer for the p-side were deposited with 2D-like conditions wrapped around the core. The crystalline quality of the NAMs, shell growth rates and the Indium distribution were investigated by high resolution transmission electron microscopy. Furthermore, optical emission was studied using density-dependent photoluminescence spectroscopy.

  20. Faceting control in core-shell GaN micropillars using selective epitaxy

    Directory of Open Access Journals (Sweden)

    Sergiy Krylyuk

    2014-10-01

    Full Text Available We report on the fabrication of large-area, vertically aligned GaN epitaxial core-shell micropillar arrays. The two-step process consists of inductively coupled plasma (ICP etching of lithographically patterned GaN-on-Si substrate to produce an array of micropillars followed by selective growth of GaN shells over these pillars using Hydride Vapor Phase Epitaxy (HVPE. The most significant aspect of the study is the demonstration of the sidewall facet control in the shells, ranging from {1 1 ̄ 01} semi-polar to {1 1 ̄ 00} non-polar planes, by employing a post-ICP chemical etch and by tuning the HVPE growth temperature. Room-temperature photoluminescence, cathodoluminescence, and Raman scattering measurements reveal substantial reduction of parasitic yellow luminescence as well as strain-relaxation in the core-shell structures. In addition, X-ray diffraction indicates improved crystal quality after the shell formation. This study demonstrates the feasibility of selective epitaxy on micro-/nano- engineered templates for realizing high-quality GaN-on-Si devices.

  1. HVPE GaN wafers with improved crystalline and electrical properties

    Science.gov (United States)

    Freitas, J. A.; Culbertson, J. C.; Mahadik, N. A.; Sochacki, T.; Iwinska, M.; Bockowski, M. S.

    2016-12-01

    The quest for low cost GaN substrates with optimized crystalline and electrical properties continues to fuel the search for a fast growth method to produce commercial wafers that will allow the fabrication of devices capable of achieving high performance at high power and/or high frequency. Thick films grown by hydride vapor phase epitaxy (HVPE) on Ammono substrates in addition to reproducing the high crystalline quality of those substrates show significant reduction in free carrier concentration. This work presents a detailed spectroscopic, X-ray diffraction, and Raman spectroscopy imaging investigation of thick freestanding HVPE GaN films deposited on HVPE/Ammono-GaN templates. The results demonstrate that they are stress-free, and have a nearly uniform and relatively lower residual background doping, in addition to high crystalline quality. This result is extremely important, because it demonstrates the usefulness of this new type of HVPE-GaN substrate to fabricate highly efficient optoelectronic and electronic devices.

  2. Integration and electrical properties of epitaxial LiNbO{sub 3} ferroelectric film on n-type GaN semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Hao Lanzhong, E-mail: hao_lanzhong@live.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Zhu Jun, E-mail: junzhu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu Yunjie [Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Wang Shuili; Zeng Huizhong; Liao Xiuwei; Liu Yingying; Lei Huawei; Zhang Ying; Zhang Wanli; Li Yanrong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2012-01-31

    LiNbO{sub 3} (LNO) films were epitaxially grown on n-type GaN templates using pulsed laser deposition technique. The microstructures and electrical properties of the LNO/GaN heterostructure were characterized by x-ray diffraction, transmission electron microscope, and capacitance-voltage (C-V) measurements. The LNO films had two variants of grains rotated 60 Degree-Sign in-plane to each other. The epitaxial relationship of the respective variants could be built as [10-10]LNO//[1-210]GaN and [1-100]LNO//[11-20]GaN via 30 Degree-Sign in-plane rotation of the LNO film relative to the GaN layer. Interface analysis of the heterostructure demonstrated that two different epitaxial growth mechanisms vertical heteroepitaxy and lateral homoepitaxy, should happen at the interface of LNO/GaN. Counterclockwise C-V windows induced by the ferroelectric polarizations of LNO film could be observed clearly. The size of the window increased with increasing the sweep bias and a large window of 5.8 V was achieved at {+-} 15 V. By solving Poisson and drift-diffusion equations, the physical mechanisms of the C-V characteristics were demonstrated.

  3. A Deformable Template Model, with Special Reference to Elliptical Templates

    DEFF Research Database (Denmark)

    Hobolth, Asger; Pedersen, Jan; Jensen, Eva Bjørn Vedel

    2002-01-01

    This paper suggests a high-level continuous image model for planar star-shaped objects. Under this model, a planar object is a stochastic deformation of a star-shaped template. The residual process, describing the difference between the radius-vector function of the template and the object...

  4. Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts

    Science.gov (United States)

    Harotoonian, Vache; Woodall, Jerry M.

    2016-12-01

    High-quality, single crystal wurtzite InN films were fabricated by radio-frequency magnetron reactive sputtering on GaN templates. The sputtered InN films in this study were about 100 nm thick. Atomic force microscopy analysis revealed the sputtered InN film had root-mean-square surface roughness of about 0.4 nm, which is comparable to the underlying GaN template. Coupled x-ray diffraction (XRD) measurements confirmed the (0001) preferred growth orientation and ω-rocking curve full-width-half-maximum (FWHM) = 0.85° for the symmetrical (0002) diffraction peak. The present InN film has the best crystal quality in terms of narrower FWHM of XRD rocking curve among reported sputtered InN thin films. In-plane and out-of-plane XRD measurements revealed a relaxed film. Room temperature Hall Effect measurements showed mobility of 110 cm2/V.s and electron concentration of 1-2 × 1020/cm3. The feasibility of utilizing a cost effective and productive method of sputtering to form robust Schottky contacts to GaN using InN, an immiscible and metallic-like semiconductor, was explored.

  5. Preparation and Characterization of GaN Nanowires

    Institute of Scientific and Technical Information of China (English)

    薛成山; 杨莺歌; 马洪磊; 庄惠照; 马瑾

    2003-01-01

    GaN Nanowires were prepared by the post-nitridation technique. The morphology and structure of GaN nanowires are investigated by transmission-electron microscopy and scanning electron microscopy. A strong blue photoluminescence is observed for room-temperature measurement, which attributes to electron transition from DX centre to valence band.

  6. Silicon—a new substrate for GaN growth

    Indian Academy of Sciences (India)

    S Pal; C Jacob

    2004-12-01

    Generally, GaN-based devices are grown on silicon carbide or sapphire substrates. But these substrates are costly and insulating in nature and also are not available in large diameter. Silicon can meet the requirements for a low cost and conducting substrate and will enable integration of optoelectronic or high power electronic devices with Si based electronics. But the main problem that hinders the rapid development of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the first MBE grown GaN based LED on Si was made and now the quality of material grown on silicon is comparable to that on sapphire substrate. It is only a question of time before Si based GaN devices appear on the market. This article is a review of the latest developments in GaN based devices on silicon.

  7. Synthesis of GaN films on porous silicon substrates

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A novel and simple method was employed to synthesize GaN films on porous silicon (PS) substrates. GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering.Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS.The samples were analyzed with X-ray diffraction (XRD) to identify crystalline structure. Fourier transmit infrared (FTIR)spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy (SEM) and were found to consist of many big crystal grains. Photoluminescence (PL) spectrum was used to illuminate the optical property of the GaN films.

  8. DNA-templated nanofabrication.

    Science.gov (United States)

    Becerril, Héctor A; Woolley, Adam T

    2009-02-01

    Nanofabrication, or the organizational control over matter at the nanometre scale, is an intriguing scientific challenge requiring multidisciplinary tools for its solution. DNA is a biomolecule that can be combined with other nanometre-scale entities through chemical self-assembly to form a broad variety of nanomaterials. In this tutorial review we present the principles that allow DNA to interact with other chemical species, and describe the challenges and potential applications of DNA as a template for making both biological and inorganic features with nanometre resolution. As such, this report should be of interest to chemists, surface and materials scientists, biologists, and nanotechnologists, as well as others who seek to use DNA in nanofabrication.

  9. Templated quasicrystalline molecular layers

    Science.gov (United States)

    Smerdon, Joe; Young, Kirsty; Lowe, Michael; Hars, Sanger; Yadav, Thakur; Hesp, David; Dhanak, Vinod; Tsai, An-Pang; Sharma, Hem Raj; McGrath, Ronan

    2014-03-01

    Quasicrystals are materials with long range ordering but no periodicity. We report scanning tunneling microscopy (STM) observations of quasicrystalline molecular layers on five-fold quasicrystal surfaces. The molecules adopt positions and orientations on the surface consistent with the quasicrystalline ordering of the substrate. Carbon-60 adsorbs atop sufficiently-separated Fe atoms on icosahedral Al-Cu-Fe to form a unique quasicrystalline lattice whereas further C60 molecules decorate remaining surface Fe atoms in a quasi-degenerate fashion. Pentacene (Pn) adsorbs at tenfold-symmetric points around surface-bisected rhombic triacontahedral clusters in icosahedral Ag-In-Yb. These systems constitute the first demonstrations of quasicrystalline molecular ordering on a template. EPSRC EP/D05253X/1, EP/D071828/1, UK BIS.

  10. Template-synthesized opal hydrogels

    Institute of Scientific and Technical Information of China (English)

    LI Jun; JI Lijun; RONG Jianhua; YANG Zhenzhong

    2003-01-01

    Opal hydrogels could be synthesized with polymer inverse opal template. A pH responsive opal N-iso- propylacrylamide/acrylic acid copolymerized hydrogel was prepared as an example. The ordered structure and response to pH were investigated. Through the sol-gel process of tetrabutyl titanate, opal titania was obtained with the opal hydrogel template.

  11. Making Deformable Template Models Operational

    DEFF Research Database (Denmark)

    Fisker, Rune

    2000-01-01

    Deformable template models are a very popular and powerful tool within the field of image processing and computer vision. This thesis treats this type of models extensively with special focus on handling their common difficulties, i.e. model parameter selection, initialization and optimization...... published during the Ph.D. project. To put these articles into the general context of deformable template models and to pass on an overview of the deformable template model literature, the thesis starts with a compact survey of the deformable template model literature with special focus on representation....... A proper handling of the common difficulties is essential for making the models operational by a non-expert user, which is a requirement for intensifying and commercializing the use of deformable template models. The thesis is organized as a collection of the most important articles, which has been...

  12. Nonlinear characterization of GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Chen Chi; Hao Yue; Yang Ling; Quan Si; Ma Xiaohua; Zhang Jincheng, E-mail: ccachi@163.com [National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-11-15

    DC I-V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 {mu}m and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 {mu}m to 1mm, owing to the reduced contribution of the parasitic effect. The devices investigated with different gate widths are enough to work in the C band and X band. The large signal measurements include the load-pull measurements and power sweep measurements at the C band (5.5 GHz) and X band (8 GHz). When biasing the gate voltage in class AB and selecting the source impedance, the optimum load impedances seen from the device for output power and PAE were localized in the load-pull map. The results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage, and the CW power density of 10.16 W/mm was obtained. From the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed, although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

  13. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); Niermann, T.; Lehmann, M. [Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany); Thapa, S. B.; Haeberlen, M.; Storck, P. [SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); BTU Cottbus, Konrad-Zuse-Str. 1, 03046 Cottbus (Germany)

    2015-11-16

    We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

  14. Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN

    Energy Technology Data Exchange (ETDEWEB)

    Garrett, Gregory A.; Rotella, Paul; Shen, Hongen; Wraback, Michael [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783 (United States); Haeger, Daniel A.; Chung, Roy B.; Pfaff, Nathan; Young, Erin C.; DenBaars, Steven P.; Speck, James S.; Cohen, Daniel A. [Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106 (United States)

    2012-03-15

    Active regions for mid-ultraviolet laser diodes grown on bulk AlGaN templates are investigated by time-resolved photoluminescence. The active regions were grown pseudomorphically on thick, relaxed AlGaN on bulk GaN in the semi-polar orientation where it has been shown that the glide of dislocations create strain relieving defects confined to the AlGaN/GaN interface, away from the active region. The photoluminescence lifetimes were found to have mono-exponential decays of around 500 ps and calculated radiative and non-radiative lifetimes are compared to previously reported results for active regions on bulk m-plane GaN. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off

    Science.gov (United States)

    Mu, Fengwen; Morino, Yuki; Jerchel, Kathleen; Fujino, Masahisa; Suga, Tadatomo

    2017-09-01

    Room temperature GaN-Si direct wafer bonding was done by surface activated bonding (SAB). At first, a feasibility study using GaN template has been done. Then, crystal-face dependence of the bonding results for freestanding GaN substrate has been investigated between Ga-face and N-face. The results of Ga-face to Si bonding are better than that of N-face to Si bonding such as higher bonding energy and larger bonded area. This difference should be caused by their different surface roughnesses after chemical-mechanical polishing (CMP). Besides, both of the structure and composition of the two kinds of interfaces were investigated to understand the bonding mechanisms. The phenomenon of Ga-enrichment during surface activation and Ga-diffusion into Si at room temperature for both Ga-face bonding and N-face bonding has been confirmed.

  16. A Ga2O·11Al2O3 nanonet prepared by interfacial reaction growth approach and its application in fabricating GaN nanowires

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 730 °C to form Ga2O·11Al2O3 at the interfaces of a porous anodic aluminum oxide (AAO) template. The prepared Ga2O·11Al2O3 nanonet then served as a Ga2O-stablizing reservoir to fabricate single crystal GaN nanowires. The residual Ga2O3 powder at the surface of the produced Ga2O·11Al2O3 nanonet and the metallic Ga or Ga2O from the Ga2O·11Al2O3 decomposition reacted with ammonia to yield GaN nanowires at 780 °C. The reaction mechanisms were investigated.

  17. GaN: Defect and Device Issues

    Energy Technology Data Exchange (ETDEWEB)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  18. Novel oxide buffer approach for GaN integration on Si(111) platform through Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bi-layer

    Energy Technology Data Exchange (ETDEWEB)

    Tarnawska, Lidia

    2012-12-19

    Motivation: Preparation of GaN virtual substrates on large-scale Si wafers is intensively pursued as a cost-effective approach for high power/high frequency electronics (HEMT's etc.) and optoelectronic applications (LED, LASER). However, the growth of high quality GaN layers on Si is hampered by several difficulties mainly related to a large lattice mismatch (-17%) and a huge difference in the thermal expansion coefficient (56%). As a consequence, GaN epitaxial layers grown on Si substrates show a high number of defects (threading dislocations etc.), which severely deteriorate the overall quality of the GaN films. Additionally, due to the different thermal expansion coefficients of the substrate and the film, um-thick GaN layers crack during post-growth cooling. To solve these integration problems, different semiconducting (e.g. AlN, GaAs, ZnO, HfN) and insulating (e.g. Al{sub 2}O{sub 3}, MgO, LiGaO{sub 2}) buffer layers, separating the Si substrate from the GaN film, are applied. Goal: In this thesis, a novel buffer approach for the integration of GaN on Si is proposed and investigated. The new approach employs Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bilayer templates as a step-graded buffer to reduce the lattice mismatch between GaN and the Si(111) substrate. According to the bulk crystal lattices, since the Y{sub 2}O{sub 3} has an in-plane lattice misfit of -2% to Si, Sc{sub 2}O{sub 3} -7% to Y{sub 2}O{sub 3}, the lattice misfit between GaN and the substrate can be theoretically reduced by about 50% from -17% (GaN/Si) to -8% (GaN/Sc{sub 2}O{sub 3}). Experimental: The GaN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) heterostructures are prepared in a multichamber molecular beam epitaxy system on 4 inch Si(111) wafers. In order to obtain complete information on the structural quality of the oxide buffer as well as the GaN layer, synchrotron- and laboratory-based X-ray diffraction, transmission electron microscopy and photoluminescence measurements are performed. The

  19. Cloning nanocrystal morphology with soft templates

    Science.gov (United States)

    Thapa, Dev Kumar; Pandey, Anshu

    2016-08-01

    In most template directed preparative methods, while the template decides the nanostructure morphology, the structure of the template itself is a non-general outcome of its peculiar chemistry. Here we demonstrate a template mediated synthesis that overcomes this deficiency. This synthesis involves overgrowth of silica template onto a sacrificial nanocrystal. Such templates are used to copy the morphologies of gold nanorods. After template overgrowth, gold is removed and silver is regrown in the template cavity to produce a single crystal silver nanorod. This technique allows for duplicating existing nanocrystals, while also providing a quantifiable breakdown of the structure - shape interdependence.

  20. Growth and Microstructure of GaN on (111) Si

    Science.gov (United States)

    Follstaedt, D. M.; Han, J.; Provencio, P.; Fleming, J.

    1998-10-01

    GaN grown on (111) Si by MOCVD was examined by TEM. This structure is of interest for possible integration of short-wavelength optical emission with Si microelectronics. A rotating disc reactor with TMGa, TMAl and ammonia precursors was used to first grow an 30 nm-thick AlN buffer on the Si at 1080^oC, followed by GaN at 1060^oC. The resulting 2 μm layer appeared smooth by in situ reflectance, but developed a high density of cracks when cooled to room temperature due to the difference in thermal expansions of GaN and Si. Between the cracks, cross-section and plan-view TEM identified the orientation as (0001)GaN parallel (111)Si, with [11-20]GaN parallel [1-10]Si. A high density of threading dislocations (4 to 8x10^9/cm^2) was found and determined to be 2/3 pure edge and 1/3 mixed (edge + screw) in character. A low density (10^8/cm^2) of nanotubes was also identified. This defect microstructure is much like that of GaN on sapphire. The thin AlN buffer was continuous and consists of 20 to 40 nm grains, with some exhibiting slight misorientations. A few dislocations threading the GaN layer could be traced to an interface between the AlN grains. The continuous thin layer indicates that the AlN buffer "wets" Si, whereas thin GaN layers are discontinuous on sapphire; 0.4 μm thickness of GaN is needed for a continuous layer.

  1. UMA/GAN network architecture analysis

    Science.gov (United States)

    Yang, Liang; Li, Wensheng; Deng, Chunjian; Lv, Yi

    2009-07-01

    This paper is to critically analyze the architecture of UMA which is one of Fix Mobile Convergence (FMC) solutions, and also included by the third generation partnership project(3GPP). In UMA/GAN network architecture, UMA Network Controller (UNC) is the key equipment which connects with cellular core network and mobile station (MS). UMA network could be easily integrated into the existing cellular networks without influencing mobile core network, and could provides high-quality mobile services with preferentially priced indoor voice and data usage. This helps to improve subscriber's experience. On the other hand, UMA/GAN architecture helps to integrate other radio technique into cellular network which includes WiFi, Bluetooth, and WiMax and so on. This offers the traditional mobile operators an opportunity to integrate WiMax technique into cellular network. In the end of this article, we also give an analysis of potential influence on the cellular core networks ,which is pulled by UMA network.

  2. Investigation of deep levels in bulk GaN

    OpenAIRE

    2014-01-01

    The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobel Laureates in Physics, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. GaN and its alloys with In and Al belong to a semiconductor group which is referred as the III-nitrides. It has outstanding ...

  3. Synthesis of Single Crystal GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Lining Fang

    2016-05-01

    Full Text Available The straight and curved gallium nitride (GaN nanowires were successfully synthesized by controlling the gallium/ nitrogen reactant ratio via a chemical vapour deposition method. The structure and morphology of nanowires were characterized by X-ray diffraction (XRD, transmission electronic microscopy (TEM, field emission scanning electron microscopy (FESEM, selected area electron diffraction (SAED and high resolution transmission electron microscopy (HRTEM. The straight and curved GaN nanowires are composed of wurtzite and a zinc blende structure, respectively. Photoluminescence (PL spectra of zinc blende GaN nanowires showed a strong UV emission band at 400 nm, indicating potential application in optoe‐ lectronic devices.

  4. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David

    2014-01-01

    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  5. Templated Growth of Carbon Nanotubes

    Science.gov (United States)

    Siochik Emilie J. (Inventor)

    2007-01-01

    A method of growing carbon nanotubes uses a synthesized mesoporous si lica template with approximately cylindrical pores being formed there in. The surfaces of the pores are coated with a carbon nanotube precu rsor, and the template with the surfaces of the pores so-coated is th en heated until the carbon nanotube precursor in each pore is convert ed to a carbon nanotube.

  6. Annealing of ion-implanted GaN

    CERN Document Server

    Burchard, A; Stötzler, A; Weissenborn, R; Deicher, M

    1999-01-01

    $^{111m}$Cd and $^{112}$Cd ions have been implanted into GaN. With photoluminescence spectroscopy and perturbed $\\gamma-\\gamma$-angular correlation spectroscopy (PAC) the reduction of implantation damage and the optical activation of the implants have been observed as a function of annealing temperature using different annealing methods. The use of N$_{2}$ or NH$_{3}$ atmosphere during annealing allows temperatures up to 1323k and 1373 K, respectively, but above 1200 K a strong loss of Cd from the GaN has been observed. Annealing GaN together with elementary Al forms a protective layer on the GaN surface allowing annealing temperatures up to 1570 K for 10 min. (11 refs).

  7. Application of Generative Adversarial Networks (GANs) to jet images

    CERN Document Server

    CERN. Geneva

    2017-01-01

    https://arxiv.org/abs/1701.05927 We provide a bridge between generative modeling in the Machine Learning community and simulated physical processes in High Energy Particle Physics by applying a novel Generative Adversarial Network (GAN) architecture to the production of jet images -- 2D representations of energy depositions from particles interacting with a calorimeter. We propose a simple architecture, the Location-Aware Generative Adversarial Network, that learns to produce realistic radiation patterns from simulated high energy particle collisions. The pixel intensities of GAN-generated images faithfully span over many orders of magnitude and exhibit the desired low-dimensional physical properties (i.e., jet mass, n-subjettiness, etc.). We shed light on limitations, and provide a novel empirical validation of image quality and validity of GAN-produced simulations of the natural world. This work provides a base for further explorations of GANs for use in faster simulation in High Energy Particle Physics.

  8. Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

    Science.gov (United States)

    Conroy, M.; Li, H.; Kusch, G.; Zhao, C.; Ooi, B.; Edwards, P. R.; Martin, R. W.; Holmes, J. D.; Parbrook, P. J.

    2016-05-01

    We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD

  9. Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

    Institute of Scientific and Technical Information of China (English)

    冯淦; 朱建军; 沈晓明; 张宝顺; 赵德刚; 王玉田; 杨辉; 梁骏吾

    2003-01-01

    In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 μm. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.

  10. GaN nanorods coated with pure BN

    Science.gov (United States)

    Han, Wei-Qiang; Zettl, A.

    2002-12-01

    We report a method to efficiently synthesize gallium nitride (GaN) nanorods coated with insulating boron nitride (BN) layers. The GaN core is crystalline (with either a cubic zincblende or hexagonal wurtzite structure) and has diameters ranging from 10 to 85 nm and lengths up to 60 μm. The outer encapsulating BN shells with typical thicknesses less than 5 nm extend fully over, and adhere well to, the entire nanorod surface.

  11. Effect of photocatalytic oxidation technology on GaN CMP

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jie, E-mail: jie-wang11@mails.tsinghua.edu.cn; Wang, Tongqing, E-mail: wtq@mail.tsinghua.edu.cn; Pan, Guoshun, E-mail: pangs@mail.tsinghua.edu.cn; Lu, Xinchun, E-mail: xclu@mail.tsinghua.edu.cn

    2016-01-15

    Graphical abstract: - Highlights: • Photocatalytic oxidation technology was introduced to GaN CMP for the first time and proves to be more efficient than before. • XPS analysis reveals the planarization process by different N-type semiconductor particles. • Analyzing the effect of pH on photocatalytic oxidation in GaN CMP. • Proposing the photocatalytic oxidation model to reveal the removal mechanism. - Abstract: GaN is so hard and so chemically inert that it is difficult to obtain a high material removal rate (MRR) in the chemical mechanical polishing (CMP) process. This paper discusses the application of photocatalytic oxidation technology in GaN planarization. Three N-type semiconductor particles (TiO{sub 2}, SnO{sub 2}, and Fe{sub 2}O{sub 3}) are used as catalysts and added to the H{sub 2}O{sub 2}–SiO{sub 2}-based slurry. By optical excitation, highly reactive photoinduced holes are produced on the surface of the particles, which can oxidize OH{sup −} and H{sub 2}O absorbed on the surface of the catalysts; therefore, more OH* will be generated. As a result, GaN MRRs in an H{sub 2}O{sub 2}–SiO{sub 2}-based polishing system combined with catalysts are improved significantly, especially when using TiO{sub 2}, the MRR of which is 122 nm/h. The X-ray photoelectron spectroscopy (XPS) analysis shows the variation trend of chemical composition on the GaN surface after polishing, revealing the planarization process. Besides, the effect of pH on photocatalytic oxidation combined with TiO{sub 2} is analyzed deeply. Furthermore, the physical model of GaN CMP combined with photocatalytic oxidation technology is proposed to describe the removal mechanism of GaN.

  12. Terahertz response of GaN thin films.

    Science.gov (United States)

    Tsai, Tsong-Ru; Chen, Shi-Jie; Chang, Chih-Fu; Hsu, Sheng-Hsien; Lin, Tai-Yuan; Chi, Cheng-Chung

    2006-05-29

    The indices of refraction, extinction constants and complex conductivities of the GaN film for frequencies ranging from 0.2 to 2.5 THz are obtained using THz time-domain spectroscopy. The results correspond well with the Kohlrausch stretched exponential model. Using the Kohlrausch model fit not only provides the mobility of the free carriers in the GaN film, but also estimates the relaxation time distribution function and average relaxation time.

  13. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

    Energy Technology Data Exchange (ETDEWEB)

    Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

    2011-04-11

    The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde

  14. Study of GaN adsorption on the Si surface

    Energy Technology Data Exchange (ETDEWEB)

    Li Wei, E-mail: tolwwt@163.com [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, 510006 Guangzhou (China); Chen Junfang [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, 510006 Guangzhou (China); Wang Teng [School of Computer, South China Normal University, 510006 Guangzhou (China)

    2009-10-15

    The adsorption energy, the band structures and DOS (density of states) of GaN on surface of Si(1 0 0) and Si(1 1 1) are calculated by the first-principle using plane-wave pseudo-potentials method based on the density functional theory in order to know the adsorption between the surface of Si and GaN. The calculation results show that GaN is easier adsorbed on the surface of Si(1 0 0) than the surface of Si(1 1 1) under the same experimental condition. There are strong charge distributions between N and Si atom. The bandgap of GaN on surface of Si(1 0 0) becomes a little narrower than that of pure GaN. On the other hand, GaN film is deposited on the surface of Si(1 0 0) by ECR-MOPECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition) at low temperature. For substrate of Si(1 1 1), no film is obtained under the same experimental condition.

  15. The LOLITA User-Definable Template Interface

    OpenAIRE

    Košmelj, Katarina

    2001-01-01

    The development of user-definable templates interfaces which allow the user to design new templates definitions in a user-friendly way is a new issue in the field of information extraction. The LOLITA user-definable templates interface allows the user to define new templates using sentences in natural language text with a few restrictions and formal elements. This approach is rather different from previous approaches to information extraction which require developers to code the template defi...

  16. DLTS study of n-type GaN grown by MOCVD on GaN substrates

    Science.gov (United States)

    Tokuda, Y.; Matsuoka, Y.; Ueda, H.; Ishiguro, O.; Soejima, N.; Kachi, T.

    2006-10-01

    Electron traps in n-type GaN layers grown homoepitaxially by MOCVD on free-standing GaN substrates have been characterized using DLTS for vertical Schottky diodes. Two free-standing HVPE GaN substrates (A and B), obtained from two different sources, are used. The Si-doped GaN layers with the thickness of 5 μm are grown on an area of 0.9×0.9 cm 2 of substrate A and on an area of 1×1 cm 2 of substrate B. Two traps labeled B1 (Ec-0.23 eV) and B2 (Ec-0.58 eV) are observed with trap B2 dominant in GaN on both substrates. There exist no dislocation-related traps which have been previously observed in MOCVD GaN on sapphire. This might be correlated to the reduction in dislocation density due to the homoepitaxial growth. However, it is found that there is a large variation, more than an order of magnitude, in trap B2 concentration and that the B2 spatial distributions are different between the two substrates used.

  17. Biometric template transformation: a security analysis

    Science.gov (United States)

    Nagar, Abhishek; Nandakumar, Karthik; Jain, Anil K.

    2010-01-01

    One of the critical steps in designing a secure biometric system is protecting the templates of the users that are stored either in a central database or on smart cards. If a biometric template is compromised, it leads to serious security and privacy threats because unlike passwords, it is not possible for a legitimate user to revoke his biometric identifiers and switch to another set of uncompromised identifiers. One methodology for biometric template protection is the template transformation approach, where the template, consisting of the features extracted from the biometric trait, is transformed using parameters derived from a user specific password or key. Only the transformed template is stored and matching is performed directly in the transformed domain. In this paper, we formally investigate the security strength of template transformation techniques and define six metrics that facilitate a holistic security evaluation. Furthermore, we analyze the security of two wellknown template transformation techniques, namely, Biohashing and cancelable fingerprint templates based on the proposed metrics. Our analysis indicates that both these schemes are vulnerable to intrusion and linkage attacks because it is relatively easy to obtain either a close approximation of the original template (Biohashing) or a pre-image of the transformed template (cancelable fingerprints). We argue that the security strength of template transformation techniques must consider also consider the computational complexity of obtaining a complete pre-image of the transformed template in addition to the complexity of recovering the original biometric template.

  18. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions...

  19. Quantificational Etching of AAO Template

    Institute of Scientific and Technical Information of China (English)

    Guojun SONG; Dong CHEN; Zhi PENG; Xilin SHE; Jianjiang LI; Ping HAN

    2007-01-01

    Ni nanowires were prepared by electrodeposition in porous anodized aluminum oxide (AAO) template from a composite electrolyte solution. Well-ordered Ni nanowire arrays with controllable length were then made by the partial removal of AAO using a mixture of phosphoric acid and chromic acid (6 wt pct H3PO4:1.8 wt pct H3CrO4). The images of Ni nanowire arrays were studied by scanning electron microscopy (SEM) to determine the relationship between etching time and the length of Ni nanowire arrays. The results indicate that the length of nanowires exposed from the template can be accurately controlled by controlling etching time.

  20. Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

    Science.gov (United States)

    Uedono, Akira; Malinverni, Marco; Martin, Denis; Okumura, Hironori; Ishibashi, Shoji; Grandjean, Nicolas

    2016-06-01

    Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5-0.7 μm were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadening spectra. Although no vacancies were detected in samples with a Mg concentration [Mg] below 7 × 1019 cm-3, vacancy-type defects were introduced starting at above [Mg] = 1 × 1020 cm-3. The major defect species was identified as a complex between Ga vacancy (VGa) and multiple nitrogen vacancies (VNs). The introduction of vacancy complexes was found to correlate with a decrease in the net acceptor concentration, suggesting that the defect introduction is closely related to the carrier compensation. We also investigated Mg-doped GaN layers grown using In as the surfactant. The formation of vacancy complexes was suppressed in the subsurface region (≤80 nm). The observed depth distribution of defects was attributed to the thermal instability of the defects, which resulted in the introduction of vacancy complexes during the deposition process.

  1. Thick Homoepitaxial GaN with Low Carrier Concentration for High Blocking Voltage

    Science.gov (United States)

    2010-01-01

    demonstrated that GaN Schottky diodes fabricated on freestanding GaN substrates with simple metal overlap edge termination show reverse recovery time...Prior to ramping up to the growth temperature for MOCVD deposition of GaN, the flows of palladium -diffused high purity hydrogen and ammonia were

  2. Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications

    Science.gov (United States)

    Kum, Hyun; Seong, Han-Kyu; Lim, Wantae; Chun, Daemyung; Kim, Young-Il; Park, Youngsoo; Yoo, Geonwook

    2017-01-01

    We present a method of epitaxially growing thermodynamically stable gallium nitride (GaN) nanorods via metal-organic chemical vapor deposition (MOCVD) by invoking a two-step self-limited growth (TSSLG) mechanism. This allows for growth of nanorods with excellent geometrical uniformity with no visible extended defects over a 100 mm sapphire (Al2O3) wafer. An ex-situ study of the growth morphology as a function of growth time for the two self-limiting steps elucidate the growth dynamics, which show that formation of an Ehrlich-Schwoebel barrier and preferential growth in the c-plane direction governs the growth process. This process allows monolithic formation of dimensionally uniform nanowires on templates with varying filling matrix patterns for a variety of novel electronic and optoelectronic applications. A color tunable phosphor-free white light LED with a coaxial architecture is fabricated as a demonstration of the applicability of these nanorods grown by TSSLG.

  3. High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gacevic, Z.; Fernandez-Garrido, S.; Calleja, E. [ISOM, Universidad Politecnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain); Rebled, J. M.; Peiro, F. [LENS-MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Estrade, S. [LENS-MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); TEM-MAT, CCiT-UB, Sole i Sabaris 1, 08028 Barcelona (Spain)

    2011-07-18

    We report on properties of high quality {approx}60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be {+-} 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

  4. Progress of NIL template making

    Science.gov (United States)

    Yusa, Satoshi; Hiraka, Takaaki; Kobiki, Ayumi; Sasaki, Shiho; Itoh, Kimio; Toyama, Nobuhito; Kurihara, Masaaki; Mohri, Hiroshi; Hayashi, Naoya

    2007-05-01

    Nano-imprint lithography (NIL) has been counted as one of the lithography solutions for hp32nm node and beyond. Recently, the small line edge roughness (LER) as well as the potentially high resolution that will ensure no-OPC mask feature is attracting many researchers. The template making is one of the most critical issues for the realization of NIL. Especially when we think of a practical template fabrication process on a 65mm square format that is going to be the industry standard, the resolution of the template making process showed a limitation. We have achieved for the first time an hp22nm resolution on the 65nm template format. Both line and space patterns and hole patterns were well resolved. Regarding dot patterns, we still need improvement, but we have achieved resolution down to hp28nm. Although so far we cannot achieve these resolution limits of various pattern category at the same time on one substrate, an intermediate process condition showed sufficient uniformity both in lateral CD and in vertical depth. Global pattern image placement also showed sufficient numbers at this stage of lithography development. A 20nm feature (with a pitch of 80nm) showed sufficient imprint result.

  5. Supply-Chain Optimization Template

    Science.gov (United States)

    Quiett, William F.; Sealing, Scott L.

    2009-01-01

    The Supply-Chain Optimization Template (SCOT) is an instructional guide for identifying, evaluating, and optimizing (including re-engineering) aerospace- oriented supply chains. The SCOT was derived from the Supply Chain Council s Supply-Chain Operations Reference (SCC SCOR) Model, which is more generic and more oriented toward achieving a competitive advantage in business.

  6. Viral-templated Palladium Nanocatalysts

    Science.gov (United States)

    Yang, Cuixian

    Despite recent progress on nanocatalysis, there exist several critical challenges in simple and readily controllable nanocatalyst synthesis including the unpredictable particle growth, deactivation of catalytic activity, cumbersome catalyst recovery and lack of in-situ reaction monitoring. In this dissertation, two novel approaches are presented for the fabrication of viral-templated palladium (Pd) nanocatalysts, and their catalytic activities for dichromate reduction reaction and Suzuki Coupling reaction were thoroughly studied. In the first approach, viral template based bottom-up assembly is employed for the Pd nanocatalyst synthesis in a chip-based format. Specifically, genetically displayed cysteine residues on each coat protein of Tobacco Mosaic Virus (TMV) templates provide precisely spaced thiol functionalities for readily controllable surface assembly and enhanced formation of catalytically active Pd nanoparticles. Catalysts with the chip-based format allow for simple separation and in-situ monitoring of the reaction extent. Thorough examination of synthesis-structure-activity relationship of Pd nanoparticles formed on surface-assembled viral templates shows that Pd nanoparticle size, catalyst loading density and catalytic activity of viral-templated Pd nanocatalysts can be readily controlled simply by tuning the synthesis conditions. The viral-templated Pd nanocatalysts with optimized synthesis conditions are shown to have higher catalytic activity per unit Pd mass than the commercial Pd/C catalysts. Furthermore, tunable and selective surface assembly of TMV biotemplates is exploited to control the loading density and location of Pd nanocatalysts on solid substrates via preferential electroless deposition. In addition, the catalytic activities of surface-assembled TMV-templated Pd nanocatalysts were also investigated for the ligand-free Suzuki Coupling reaction under mild reaction conditions. The chip-based format enables simple catalyst separation and

  7. Tailoring GaN semiconductor surfaces with biomolecules.

    Science.gov (United States)

    Estephan, Elias; Larroque, Christian; Cuisinier, Frédéric J G; Bálint, Zoltán; Gergely, Csilla

    2008-07-24

    Functionalization of semiconductors constitutes a crucial step in using these materials for various electronic, photonic, biomedical, and sensing applications. Within the various possible approaches, selection of material-binding biomolecules from a random biological library, based on the natural recognition of proteins or peptides toward specific material, offers many advantages, most notably biocompatibility. Here we report on the selective functionalization of GaN, an important semiconductor that has found broad uses in the past decade due to its efficient electroluminescence and pronounced chemical stability. A 12-mer peptide ("GaN_probe") with specific recognition for GaN has evolved. The subtle interplay of mostly nonpolar hydrophobic and some polar amino acidic residues defines the high affinity adhesion properties of the peptide. The interaction forces between the peptide and GaN are quantified, and the hydrophobic domain of the GaN_probe is identified as primordial for the binding specificity. These nanosized binding blocks are further used for controlled placement of biotin-streptavidin complexes on the GaN surface. Thus, the controlled grow of a new, patterned inorganic-organic hybrid material is achieved. Tailoring of GaN by biological molecules can lead to a new class of nanostructured semiconductor-based devices.

  8. Macro-pyramid in GaN Film

    Institute of Scientific and Technical Information of China (English)

    ZHOU Jing; YANG Zhi-Jian; XU Shi-Fa; ZHU Xing; ZHANG Guo-Yi

    2001-01-01

    A thin film of GaN with the thickness of 1.0μm was grown on α-Al2Oa substrate by metal organic chemical vapour disposition and then a thick GaN film with thickness of 12μm was grown in the halide vapour phase epitaxy system. Some macro-pyramids appeared on the surface of the sample. The macro-pyramids made the surfaceof the GaN film rough, which was harmful to the devices made by GaN materials. These defects changed the distribution of carrier concentration and affected the optical properties of GaN. The step height of the pyramids was about 30-40 nm measured by atomic force microscopy. A simple model was proposed to explain the macro- pyramid phenomenon compared with the growth spiral The growth of the macro-pyramid was relative to the physical conditions in the reaction zone. Both increasing growth temperature and low pressure may reduce the pyramid size.

  9. National Wildlife Refuge System Survey Protocol Template

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This template was developed for drafting National Wildlife Refuge System (NWRS) Survey Protocols. The template is arranged in the same order as the eight basic...

  10. Web Template Extraction Based on Hyperlink Analysis

    Directory of Open Access Journals (Sweden)

    Julián Alarte

    2015-01-01

    Full Text Available Web templates are one of the main development resources for website engineers. Templates allow them to increase productivity by plugin content into already formatted and prepared pagelets. For the final user templates are also useful, because they provide uniformity and a common look and feel for all webpages. However, from the point of view of crawlers and indexers, templates are an important problem, because templates usually contain irrelevant information such as advertisements, menus, and banners. Processing and storing this information is likely to lead to a waste of resources (storage space, bandwidth, etc.. It has been measured that templates represent between 40% and 50% of data on the Web. Therefore, identifying templates is essential for indexing tasks. In this work we propose a novel method for automatic template extraction that is based on similarity analysis between the DOM trees of a collection of webpages that are detected using menus information. Our implementation and experiments demonstrate the usefulness of the technique.

  11. Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods

    KAUST Repository

    Conroy, Michele Ann

    2016-03-10

    We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips’ broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD’s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.

  12. GaN on sapphire mesa technology

    Energy Technology Data Exchange (ETDEWEB)

    Herfurth, Patrick; Men, Yakiv; Kohn, Erhard [Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein Allee 45, 89081 Ulm (Germany); Roesch, Rudolph [Institute of Optoelectronics, Albert-Einstein Allee 45, 89081 Ulm (Germany); Carlin, Jean-Francois; Grandjean, Nicolas [Laboratory of Advanced Semiconductors for Photonics and Electronics, Ecole Polytechnique Federal de Lausanne, 1015 Lausanne (Switzerland)

    2012-03-15

    This contribution reports on a GaN on sapphire mesa technology for lattice matched InAlN/GaN HEMTs similar to a silicon on insulator technology. Ultrathin buffer layers between 500 nm and 100 nm have been deep mesa etched down to the substrate to avoid cross talk between devices through the buffer and provide full transparency outside the active device area (of special interest to biochemical sensor applications).The heterostructure characteristics were: N{sub S}> 1.6 x 10{sup 13} cm{sup -2}, R{sub sh}< 600 {omega}/{open_square}. 0.25 {mu}m gate length HEMT device characteristics are moderate, but essentially similar down to 200 nm buffer thickness. Devices on 100 nm buffer layer are still difficult to reproduce. I{sub on}/I{sub off} was up to 10{sup 9} and sub-threshold slopes down to 90 mV/dec (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  14. Synthesis and Characterization of Glomerate GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Xue Chengshan

    2009-01-01

    Full Text Available Abstract Glomerate GaN nanowires were synthesized on Si(111 substrates by annealing sputtered Ga2O3/Co films under flowing ammonia at temperature of 950 °C. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscopy and Fourier transformed infrared spectra were used to characterize the morphology, crystallinity and microstructure of the as-synthesized samples. Our results show that the samples are of hexagonal wurtzite structure. For the majority of GaN nanowires, the length is up to tens of microns and the diameter is in the range of 50–200 nm. The growth process of the GaN nanowires is dominated by Co–Ga–N alloy mechanism.

  15. Gallium incorporation kinetics during GSMBE of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Jones, C.R.; Kaspi, R. [Wright State Univ. Research Center, Dayton, OH (United States); Lei, T.; Evans, K.R. [Wright Lab., Wright-Patterson AFB, OH (United States). Solid State Electronics Directorate

    1996-11-01

    The kinetics of Ga incorporation during gas-source molecular beam epitaxy of GaN are investigated for varying substrate temperature and incident ammonia flux. Incident Ga atoms eventually either: (1) react with NH{sub 3} to form GaN; (2) accumulate on the film surface, or (3) desorb. Low substrate temperatures lead to significant Ga surface accumulation due to the temperature-dependent reactivity of NH{sub 3} towards Ga. High substrate temperatures give rise to significant Ga desorption. Increasing NH{sub 3} flux retards both Ga surface accumulation and Ga desorption. The GaN formation rate variation with substrate temperature peaks near 750 C and increases with NH{sub 3} flux. The observation of two distinct and very low activation energies for Ga desorption suggests a relatively complex surface chemistry and a strong likelihood that hydrogen is playing an important role.

  16. High-Sensitivity GaN Microchemical Sensors

    Science.gov (United States)

    Son, Kyung-ah; Yang, Baohua; Liao, Anna; Moon, Jeongsun; Prokopuk, Nicholas

    2009-01-01

    Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

  17. Stability of Carbon Incorpoated Semipolar GaN(1101) Surface

    Science.gov (United States)

    Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

    2011-08-01

    The structural stability of carbon incorporated GaN(1101) surfaces is theoretically investigated by performing first-principles pseudopotential calculations. The calculated surface formation energies taking account of the metal organic vapor phase epitaxy conditions demonstrate that several carbon incorporated surfaces are stabilized depending on the growth conditions. Using surface phase diagrams, which are obtained by comparing the calculated adsorption energy with vapor-phase chemical potentials, we find that the semipolar surface forms NH2 and CH2 below ˜1660 K while the polar GaN(0001) surface with CH3 is stabilized below ˜1550 K. This difference could be one of possible explanations for p-type doping on the semipolar GaN(1101) surface.

  18. Ablation of GaN Using a Femtosecond Laser

    Institute of Scientific and Technical Information of China (English)

    刘伟民; 朱荣毅; 钱土雄; 袁述; 张国义

    2002-01-01

    We study the pulsed laser ablation of wurtzite gallium nitride (GaN) films grown on sapphire, using the fem tosecond laser beam at a central wavelength of 800nm as the source for the high-speed ablation of GaN films. By measuring the backscattered Raman spectrum of ablated samples, the dependence of the ablation depth on laser fluence with one pulse was obtained. The threshold laser fluence for the ablation of GaN films was determined to be about 0.25J/cm2. Laser ablation depth increases with the increasing laser fluence until the amount of removed material is not further increased. The ablated surface was investigated by an optical surface interference profile meter.

  19. Studies on electronic structure of GaN(0001) surface

    CERN Document Server

    Xie Chang Kun; Xu Fa Qiang; Deng Rui; Liu Feng; Yibulaxin, K

    2002-01-01

    An electronic structure investigation on GaN(0001) is reported. The authors employ a full-potential linearized augmented plane-wave (FPLAPW) approach to calculate the partial density of state, which is in agreement with previous experimental results. The effects of the Ga3d semi-core levels on the electronic structure of GaN are discussed. The valence-electronic structure of the wurtzite GaN(0001) surface is investigated using synchrotron radiation excited angle-resolved photoemission spectroscopy. The bulk bands dispersion along GAMMA A direction in the Brillouin zones is measured using normal-emission spectra by changing photon-energy. The band structure derived from authors' experimental data is compared well with the results of authors' FPLAPW calculation. Furthermore, off-normal emission spectra are also measured along the GAMMA K and GAMMA M directions. Two surface states are identified, and their dispersions are characterized

  20. Application of GaN for photoelectrolysis of water

    Science.gov (United States)

    Puzyk, M. V.; Usikov, A. S.; Kurin, S. Yu; Puzyk, A. M.; Fomichev, A. D.; Ermakov, I. A.; Kovalev, D. S.; Papchenko, B. P.; Helava, H.; Makarov, Yu N.

    2015-11-01

    GaN layers of n-type and p-type conductivity grown by HVPE on sapphire substrates were used as working electrodes for water electrolysis, photoelectrolysis and hydrogen gas generation. Specifically the water splitting process is discussed. Corrosion of the GaN materials is also considered. The hydrogen production rate under 365-nm UV LED irradiation of the GaN and external bias was 0.3 ml/(cm2*h) for an n-GaN photoanode (n∼8×1016 cm-3) in 1M Na2SO4 electrolyte and 1.2 ml/(cm2*h) for an n-GaN photoanode (n∼1×1017 cm-3) in 1M KOH electrolyte.

  1. Magnesium doped GaN grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guarneros, C., E-mail: cesyga@yahoo.com.mx [Ingenieria Electrica, Seccion Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. I.P.N. 2508, San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Sanchez, V. [Ingenieria Electrica, Seccion Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. I.P.N. 2508, San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico)

    2010-10-25

    We have studied the optical and electrical characteristics of undoped and doped GaN layers. The n- and p-type layers have been prepared by low pressure MOCVD technique. Photoluminescence (PL) studies were carried at low temperature. In the PL spectra of undoped GaN layer, a low intensity band edge emission and a broad yellow emission band were observed. The donor-acceptor pair (DAP) emission and its phonon replicas were observed in Mg lightly doped GaN layer. The dominance of the blue and the yellow emissions increased in the PL spectra as the Mg concentration was increased. The X-ray diffraction was employed to study the structure of the layers. Both the undoped and the doped layers exhibited hexagonal structure. The samples were annealed and significant changes were not observed in Hall Effect and in the PL measurements, so we suggest that there is no need of a thermal annealing for magnesium acceptor activation.

  2. Conductivity based on selective etch for GaN devices and applications thereof

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  3. Highly transparent ammonothermal bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D' Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  4. Ferromagnetism in undoped One-dimensional GaN Nanowires

    Directory of Open Access Journals (Sweden)

    K. Jeganathan

    2014-05-01

    Full Text Available We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ∼0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10−8 mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  5. Chemical mechanical polishing of freestanding GaN substrates

    Institute of Scientific and Technical Information of China (English)

    颜怀跃; 修向前; 刘战辉; 张荣; 华雪梅; 谢自力; 韩平; 施毅; 郑有炓

    2009-01-01

    Chemical mechanical polishing (CMP) has been used to produce smooth and scratch-free surfaces for GaN. In the aqueous solution of KOH, GaN is subjected to etching. At the same time, all surface irregularities, including etch pyramids, roughness after mechanical polishing and so on will be removed by a polishing pad. The experiments had been performed under the condition of different abrasive particle sizes of the polishing pad. Also the polishing results for different polishing times are analyzed, and chemical mechanical polishing resulted in an average root mean square (RMS) surface roughness of 0.565 nm, as measured by atomic force microscopy.

  6. Photoemission of graded-doping GaN photocathode

    Institute of Scientific and Technical Information of China (English)

    Fu Xiao-Qian; Chang Ben-Kang; Wang Xiao-Hui; Li Biao; Du Yu-Jie; Zhang Jun-Ju

    2011-01-01

    We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×1017 cm-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.

  7. Template electrodeposition of catalytic nanomotors.

    Science.gov (United States)

    Wang, Joseph

    2013-01-01

    The combination of nanomaterials with electrode materials has opened new horizons in electroanalytical chemistry, and in electrochemistry in general. Over the past two decades we have witnessed an enormous activity aimed at designing new electrochemical devices based on nanoparticles, nanotubes or nanowires, and towards the use of electrochemical routes--particularly template-assisted electrodeposition--for preparing nanostructured materials. The power of template-assisted electrochemical synthesis is demonstrated in this article towards the preparation and the realization of self-propelled catalytic nanomotors, ranging from Pt-Au nanowire motors to polymer/Pt microtube engines. Design considerations affecting the propulsion behavior of such catalytic nanomotors are discussed along with recent bioanalytical and environmental applications. Despite recent major advances, artificial nanomotors have a low efficiency compared to their natural counterparts. Hopefully, the present Faraday Discussion will stimulate other electrochemistry teams to contribute to the fascinating area of artificial nanomachines.

  8. LTL - The Little Template Library

    Science.gov (United States)

    Gössl, C. A.; Drory, N.; Snigula, J.

    2004-07-01

    The Little Template Library is an expression templates based C++ library for array processing, image processing, FITS and ASCII I/O, and linear algebra. It is released under the GNU Public License (GPL). Although the library is developed with application to astronomical image and data processing in mind, it is by no means restricted to these fields of application. In fact, it qualifies as a fully general array processing package. Focus is laid on a high abstraction level regarding the handling of expressions involving arrays or parts thereof and linear algebra related operations without the usually involved negative impact on performance. The price to pay is dependence on a compiler implementing enough of the current ANSI C++ specification, as well as significantly higher demand on resources at compile time. The LTL provides dynamic arrays of up to 5 dimensions, sub-arrays and slicing, support for fixed size vectors and matrices including basic linear algebra operations, expression templates based evaluation, and I/O facilities for columnar ASCII and FITS format files. In addition it supplies utility classes for statistics, linear and non-linear least squares fitting, and command line and configuration file parsing. YODA (Drory 2002) and all elements of the WeCAPP reduction pipeline (Riffeser et al. 2001, Gössl & Riffeser 2002, 2003) were implemented using the LTL.

  9. Testing sensory evidence against mnemonic templates.

    Science.gov (United States)

    Myers, Nicholas E; Rohenkohl, Gustavo; Wyart, Valentin; Woolrich, Mark W; Nobre, Anna C; Stokes, Mark G

    2015-01-01

    Most perceptual decisions require comparisons between current input and an internal template. Classic studies propose that templates are encoded in sustained activity of sensory neurons. However, stimulus encoding is itself dynamic, tracing a complex trajectory through activity space. Which part of this trajectory is pre-activated to reflect the template? Here we recorded magneto- and electroencephalography during a visual target-detection task, and used pattern analyses to decode template, stimulus, and decision-variable representation. Our findings ran counter to the dominant model of sustained pre-activation. Instead, template information emerged transiently around stimulus onset and quickly subsided. Cross-generalization between stimulus and template coding, indicating a shared neural representation, occurred only briefly. Our results are compatible with the proposal that template representation relies on a matched filter, transforming input into task-appropriate output. This proposal was consistent with a signed difference response at the perceptual decision stage, which can be explained by a simple neural model.

  10. Growth of ZnO and GaN Films

    Science.gov (United States)

    Chang, J.; Hong, S.-K.; Matsumoto, K.; Tokunaga, H.; Tachibana, A.; Lee, S. W.; Cho, M.-W.

    . Zinc oxide (ZnO) and gallium nitride (GaN) are wide bandgap semi conductors applicable to light emitting diodes (LEDs) and laser diodes (LDs) with wavelengths ranging from ultraviolet to blue light. Now ZnO and GaN are key ma terials for optoelectronic device applications and their applications are being rapidly expanded to lots of other technology including electronics, biotechnology, nanotech-nology, and fusion technology among all these. As a fundamental starting point for the development of this new technique, epitaxy of ZnO and GaN films is one of the most important key technology. Hence, development of the growth technique for high quality epitaxial films is highly necessary. Among the various kinds of epi taxy technique for semiconductor films developed so far, physical vapor deposition (PVD)-based epitaxy technique has been revealed to be the appropriate way for the high quality ZnO film and related alloy growths, while chemical vapor deposition (CVD)-based epitaxy technique has been proved to be the best method for the high quality GaN film and related alloy growths.

  11. Photoluminescence of Zn-implanted GaN

    Science.gov (United States)

    Pankove, J. I.; Hutchby, J. A.

    1974-01-01

    The photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.

  12. Basic ammonothermal GaN growth in molybdenum capsules

    Science.gov (United States)

    Pimputkar, S.; Speck, J. S.; Nakamura, S.

    2016-12-01

    Single crystal, bulk gallium nitride (GaN) crystals were grown using the basic ammonothermal method in a high purity growth environment created using a non-hermetically sealed molybdenum (Mo) capsule and compared to growths performed in a similarly designed silver (Ag) capsule and capsule-free René 41 autoclave. Secondary ion mass spectrometry (SIMS) analysis revealed transition metal free (<1×1017 cm-3) GaN crystals. Anomalously low oxygen concentrations ((2-6)×1018 cm-3) were measured in a {0001} seeded crystal boule grown using a Mo capsule, despite higher source material oxygen concentrations ((1-5)×1019 cm-3) suggesting that molybdenum (or molybdenum nitrides) may act to getter oxygen under certain conditions. Total system pressure profiles from growth runs in a Mo capsule system were comparable to those without a capsule, with pressures peaking within 2 days and slowly decaying due to hydrogen diffusional losses. Measured Mo capsule GaN growth rates were comparable to un-optimized growth rates in capsule-free systems and appreciably slower than in Ag-capsule systems. Crystal quality replicated that of the GaN seed crystals for all capsule conditions, with high quality growth occurring on the (0001) Ga-face. Optical absorption and impurity concentration characterization suggests reduced concentrations of hydrogenated gallium vacancies (VGa-Hx).

  13. Simulation of growing GaN in vertical HVPE reactor

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. It is found that when the direction of gravity is opposite to the direction of GaCl flow inlet,there exits a distance at which the uniformity of the deposition is optimal. Here the good uniformity of the deposition is obtained when the distance between the substrate and GaCl inlet is 5 cm. The parameters of gas flow used in growing GaN are also optimized. In addition, the influence of gravity and buoyancy on the deposition of GaN is discussed, too. It is found that the angle between the direction of gravity and the direction of GaCl flow inlet has a major effect on the deposition rate and the uniformity of the growth. Compared with the situation when the direction of gravity is the same with the direction of GaCl flow inlet, although the deposition rate of GaN has decreased obviously, the uniformity of the deposition has improved largely when the direction of gravity is opposite to the direction of GaCl flow inlet.

  14. Taevo Gans : särama pandud postmodernism / Kadi Viljak

    Index Scriptorium Estoniae

    Viljak, Kadi

    2004-01-01

    Viking Window ASi büroo ja ekspositsioonisaal 1979. a. Jüri Okase projekteeritud endises Paide KEKi remontmehaanikatöökoja hoones Mäos. Sisearhitekt Taevo Gans, kelle projekteeritud on ka ettevõtte juhi töölaud. T. Gansi kommentaarid. Ill.: 6 värv. sisevaadet

  15. Radiation effects in GaN devices and materials (Conference Presentation)

    Science.gov (United States)

    Sun, Ke-Xun; Nelson, Ron; Yeamans, Charles

    2016-10-01

    Gallium Nitride (GaN) is a wide-bandgap semiconductor having excellent radiation properties. GaN crystal is ionic-covalent with significant iconicity resulting in stronger molecular bond strength, which in in turn leads to excellent radiation hardness. Further, GaN has ultrafast carrier relaxation time. GaN transistors are promising for high-frequency applications due to their large bandgap (3.9eV) and higher breakdown field (NIF) high foot, high yield shots. In 2013 LANSCE run cycle, we tested GaN UV LED devices at 3.1E11 neutrons/cm^2. In 2015-2016 LANSCE run cycles, we have been operating three neutron beam lines with fluence level 1.2E11, 1.5E13, and 1E15 neutrons/cm^2. The irradiated samples include GaN UV LEDs, GaN HEMTs, and GaN substrates. In the experiments up to 2015 run cycle, we have characterized electrical and optical performances of GaN device before and after neutron irradiation, including the device IV curve measurements monitored at over the three months neutron irradiation time, and device IV curve measurements before and after NIF high yield shot irradiation. We observed no substantial degradation. These experiments firmly established GaN devices as the radiation hard platform of the next generation fusion plasma diagnostic instruments.

  16. I - Template Metaprogramming for Massively Parallel Scientific Computing - Expression Templates

    CERN Document Server

    CERN. Geneva

    2016-01-01

    Large scale scientific computing raises questions on different levels ranging from the fomulation of the problems to the choice of the best algorithms and their implementation for a specific platform. There are similarities in these different topics that can be exploited by modern-style C++ template metaprogramming techniques to produce readable, maintainable and generic code. Traditional low-level code tend to be fast but platform-dependent, and it obfuscates the meaning of the algorithm. On the other hand, object-oriented approach is nice to read, but may come with an inherent performance penalty. These lectures aim to present he basics of the Expression Template (ET) idiom which allows us to keep the object-oriented approach without sacrificing performance. We will in particular show to to enhance ET to include SIMD vectorization. We will then introduce techniques for abstracting iteration, and introduce thread-level parallelism for use in heavy data-centric loads. We will show to to apply these methods i...

  17. GaN as a radiation hard particle detector

    Science.gov (United States)

    Grant, J.; Bates, R.; Cunningham, W.; Blue, A.; Melone, J.; McEwan, F.; Vaitkus, J.; Gaubas, E.; O'Shea, V.

    2007-06-01

    Semiconductor tracking detectors at experiments such as ATLAS and LHCb at the CERN Large Hadron Collider (LHC) will be subjected to intense levels of radiation. The proposed machine upgrade, the Super-LHC (SLHC), to 10 times the initial luminosity of the LHC will require detectors that are ultra-radiation hard. Much of the current research into finding a detector that will meet the requirements of the SLHC has focused on using silicon substrates with enhanced levels of oxygen, for example Czochralski silicon and diffusion oxygenated float zone silicon, and into novel detector structures such as 3D devices. Another avenue currently being investigated is the use of wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). Both SiC and GaN should be intrinsically more radiation hard than silicon. Pad and guard ring structures were fabricated on three epitaxial GaN wafers. The epitaxial GaN thickness was either 2.5 or 12 μm and the fabricated detectors were irradiated to various fluences with 24 GeV/c protons and 1 MeV neutrons. Detectors were characterised pre- and post-irradiation by performing current-voltage ( I- V) and charge collection efficiency (CCE) measurements. Devices fabricated on 12 μm epitaxial GaN irradiated to fluences of 1016 protons cm-2 and 1016 neutrons cm-2 show maximum CCE values of 26% and 20%, respectively, compared to a maximum CCE of 53% of the unirradiated device.

  18. A template for design personas

    DEFF Research Database (Denmark)

    Nielsen, Lene; Storgaard Nielsen, Kira; Stage, Jan

    2015-01-01

    The persona method is gaining widespread use and support. Many researchers have reported from single cases and from novel domains on how they have used the method. However, the way companies and design groups describe personas has not been the focus of attention. This paper analyses 47 descriptions...... from 13 companies and compares these to an analysis of recommendations from 11 templates from literature. Furthermore, 28 interviews with Danish practitioners with experience in using personas are analyzed for content on persona descriptions. The study finds that a Danish persona style has developed...

  19. Templated growth of graphenic materials

    Energy Technology Data Exchange (ETDEWEB)

    Nicholas, Nolan W; Connors, L Matthew [Department of Physics, Rice University, 6100 Main, Houston, TX (United States); Ding, Feng [Institute of Textile and Clothing, Hong Kong Polytechnic University, Kowloon (Hong Kong); Yakobson, Boris I [Department of Mechanical Engineering and Materials Science, Rice University, 6100 Main, Houston, TX (United States); Schmidt, Howard K; Hauge, Robert H [Richard E Smalley Institute for Nanoscale Science and Technology, Rice University, 6100 Main, Houston, TX (United States)], E-mail: nolan.nicholas@matricresearch.com

    2009-06-17

    A novel strategy is proposed for the topologically controlled synthesis of extended graphenic sheets by additively reacting carbon into a pre-existing graphene sheet which is on top of a templating substrate. This concept is implemented and demonstrated using chemical vapor deposition (CVD). Novel morphological features observed in this study suggest unusual aspects of the CVD growth process. CVD results demonstrate the basic soundness of the synthesis strategy but highlight the sensitivity of the process to certain types of disruption and the need for alternative forms of embodiment.

  20. Hard template synthesis of metal nanowires

    Directory of Open Access Journals (Sweden)

    Go eKawamura

    2014-11-01

    Full Text Available Metal nanowires (NWs have attracted much attention because of their high electron conductivity, optical transmittance and tunable magnetic properties. Metal NWs have been synthesized using soft templates such as surface stabilizing molecules and polymers, and hard templates such as anodic aluminum oxide, mesoporous oxide, carbon nanotubes. NWs prepared from hard templates are composites of metals and the oxide/carbon matrix. Thus, selecting appropriate elements can simplify the production of composite devices. The resulting NWs are immobilized and spatially arranged, as dictated by the ordered porous structure of the template. This avoids the NWs from aggregating, which is common for NWs prepared with soft templates in solution. Herein, the hard template synthesis of metal NWs is reviewed, and the resulting structures, properties and potential applications are discussed.

  1. Vertical Carbon Nanotube Device in Nanoporous Templates

    Science.gov (United States)

    Maschmann, Matthew Ralph (Inventor); Fisher, Timothy Scott (Inventor); Sands, Timothy (Inventor); Bashir, Rashid (Inventor)

    2014-01-01

    A modified porous anodic alumina template (PAA) containing a thin CNT catalyst layer directly embedded into the pore walls. CNT synthesis using the template selectively catalyzes SWNTs and DWNTs from the embedded catalyst layer to the top PAA surface, creating a vertical CNT channel within the pores. Subsequent processing allows for easy contact metallization and adaptable functionalization of the CNTs and template for a myriad of applications.

  2. Influence of template fill in graphoepitaxy DSA

    Science.gov (United States)

    Doise, Jan; Bekaert, Joost; Chan, Boon Teik; Hong, SungEun; Lin, Guanyang; Gronheid, Roel

    2016-03-01

    Directed self-assembly (DSA) of block copolymers (BCP) is considered a promising patterning approach for the 7 nm node and beyond. Specifically, a grapho-epitaxy process using a cylindrical phase BCP may offer an efficient solution for patterning randomly distributed contact holes with sub-resolution pitches, such as found in via and cut mask levels. In any grapho-epitaxy process, the pattern density impacts the template fill (local BCP thickness inside the template) and may cause defects due to respectively over- or underfilling of the template. In order to tackle this issue thoroughly, the parameters that determine template fill and the influence of template fill on the resulting pattern should be investigated. In this work, using three process flow variations (with different template surface energy), template fill is experimentally characterized as a function of pattern density and film thickness. The impact of these parameters on template fill is highly dependent on the process flow, and thus pre-pattern surface energy. Template fill has a considerable effect on the pattern transfer of the DSA contact holes into the underlying layer. Higher fill levels give rise to smaller contact holes and worse critical dimension uniformity. These results are important towards DSA-aware design and show that fill is a crucial parameter in grapho-epitaxy DSA.

  3. Growth of GaN micro/nanolaser arrays by chemical vapor deposition

    Science.gov (United States)

    Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

    2016-09-01

    Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ˜1 μm and a length of ˜15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm-2. The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

  4. Structures, nanomechanics, and disintegration of single-walled GaN nanotubes: atomistic simulations

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Jeong Won; Hwang, Ho Jung; Song, Ki Oh; Choi, Won Young; Byun, Ki Ryang [Chung-Ang University, Seoul (Korea, Republic of); Kwon, Oh Keun [Semyung University, Jecheon (Korea, Republic of); Lee, Jun Ha [Sangmyung University, Chonan (Korea, Republic of); Kim, Won Woo [Juseong College, Cheongwon (Korea, Republic of)

    2003-09-15

    We have investigated the structural, mechanical, and thermal properties of single-walled GaN nanotubes by using atomistic simulations and a Tersoff-type potential. The Tersoff potential for GaN effectively describes the properties of GaN nanotubes. The nanomechanics of GaN nanotubes under tensile and compressive loadings have also been investigated, and Young's modulus has been calculated. The caloric curves of single-walled GaN nanotubes can be divided into three regions corresponding to nanotubes, the disintegrating range, and vapor. Since the stability or the stiffness of a tube decreases with increasing curving sheet-to-tube strain energy, the disintegration temperatures of GaN nanotubes are closely related to the curving sheet-to-tube strain energy.

  5. Study of radiation detection properties of GaN pn diode

    Science.gov (United States)

    Sugiura, Mutsuhito; Kushimoto, Maki; Mitsunari, Tadashi; Yamashita, Kohei; Honda, Yoshio; Amano, Hiroshi; Inoue, Yoku; Mimura, Hidenori; Aoki, Toru; Nakano, Takayuki

    2016-05-01

    Recently, GaN, which has remarkable properties as a material for optical devices and high-power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I-V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector.

  6. Gadolinium-Based GaN for Neutron Detection with Gamma Discrimination

    Science.gov (United States)

    2016-06-01

    from evaluating these detectors are summarized as, 1) semi-insulating GaN [1] does not show radiation response due to the high density carrier...Praneeth Kandlakunta, 2012 2) “ Evaluation of GaN as a Radiation Detection Material “, Jinghui Wang, 2012 Journal Articles: 1) P. Kandlakunta... Evaluation of GaN as a Radiation Detection Material. Thesis,The Ohio State University, 2012. 8. Kandlakunta, P., Gamma Rays Rejection in a Gadolinium based

  7. Fully Coupled Thermoelectromechanical Analysis of GaN High Electron Mobility Transistor Degradation

    Science.gov (United States)

    2012-04-05

    multi-dimensional continuum model of the thermoelectromechanics of GaN HEMTs is presented and discussed. The governing equations are those of linear...understanding the mechanisms of both electrical and mechanical degradation in GaN HEMTs . Various possible contributors to degradation are discussed...layers in conventional GaN HEMTs , there is another limit, observed following sustained operation at high current/voltage levels, wherein highly

  8. Preparation and properties of GaN films on Si(111) substrates

    Institute of Scientific and Technical Information of China (English)

    杨莺歌; 马洪磊; 郝晓涛; 马瑾; 薛成山; 庄惠照

    2003-01-01

    High-quality gallium nitride (GaN) films were prepared on Si(111) substrates by sputtering post-annealing-reaction technique. XRD, XPS, and SEM measurement results indicate that polycrystalline GaN with hexagonal structure was successfully prepared. Intense room- temperature photoluminescence that peaked at 354 nm of the films is observed. The bandgap of these films has a blueshift with respect to bulk GaN.

  9. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.

  10. Comparison between the standard SPM2 template and Korean-standard template in FDG-PET

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jung Hee; Lee, Byeong Il; Song, Ho Chun; Min, Jung Joon; Bom, Hee Seung [Chonnam National University Hospital, Gwangju (Korea, Republic of); Lee, Jae Sung [Seoul National University Hospital, Seoul (Korea, Republic of)

    2005-07-01

    The preprocessing step of statistical parametric mapping (SPM) requires the procedure of spatial normalization that consists of applying the nonlinear deformations needed to force every particular PET scan to match a reference template. The purpose of this study is to asses the statistic influence of using 2 different templates (the standard SPM2-PET template and Korean-standard PET template) in the normalization. We compared the regional metabolic patterns on 18F-FDG (fluorodeoxyglucose) images obtained from 4 patients with Alzheimers disease (AD) and 16 normal subjects. The statistical outcome of between- group comparison was analyzed with SPM2 and was applied into two levels of thresholds (an uncorrected P value of P <0.001, a corrected P value of P < 0.05). As a result, the most significant hypometabolic region was commonly found in the left temporal gyrus regardless of template type or thresholds. However, inconsistent results including different extent and the t-score statistics representing metabolic changes could be also observed between two templates. While the standard SPM2 template showed hypometabolic regions corresponding to Brodman area (BA) 7 and 9, Korean-standard template was not observed these regions. In addition, hypometabolic regions corresponding to BA 38 and 46 indicated not the standard SPM2 template but Korean-standard template. Statistic result showed that the standard SPM2 template effectively reflects the dorsal region of the brain while Korean-standard template is more sensitive to the medial region of the brain.

  11. Formation of Amine Groups on the Surface of GaN: A Method for Direct Biofunctionalization

    Science.gov (United States)

    2010-01-01

    the formation of surface sensitive GaN /AlGaN two- dimensional electron gas HEMT devices [5–14]. Furthermore, GaN is robust in aqueous solutions [15...variations are particularly detrimental to GaN HEMT sensors, as they are highly sensitive to the separation between the target and the device surface. Because...locate /apsuscFormation of amine groups on the surface of GaN : A method for direct biofunctionalization R. Stine, B.S. Simpkins, S.P. Mulvaney, L.J

  12. High surface hole concentration p-type GaN using Mg implantation

    CERN Document Server

    Long Tao; Zhang Guo Yi

    2001-01-01

    Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

  13. Demonstration of flexible thin film transistors with GaN channels

    Science.gov (United States)

    Bolat, S.; Sisman, Z.; Okyay, A. K.

    2016-12-01

    We report on the thin film transistors (TFTs) with Gallium Nitride (GaN) channels directly fabricated on flexible substrates. GaN thin films are grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) at 200 °C. TFTs exhibit 103 on-to-off current ratios and are shown to exhibit proper transistor saturation behavior in their output characteristics. Gate bias stress tests reveal that flexible GaN TFTs have extremely stable electrical characteristics. Overall fabrication thermal budget is below 200 °C, the lowest reported for the GaN based transistors so far.

  14. Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

    Science.gov (United States)

    Fernández-Garrido, Sergio; Kong, Xiang; Gotschke, Tobias; Calarco, Raffaella; Geelhaar, Lutz; Trampert, Achim; Brandt, Oliver

    2012-12-12

    We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained AlN layers on 6H-SiC(0001) and SiC(0001̅) substrates to ensure a well-defined polarity and an absence of structural and morphological defects. On N-polar AlN, a homogeneous and dense N-polar GaN nanowire array forms, evidencing that GaN nanowires form spontaneously in the absence of defects. On Al-polar AlN, we do not observe the formation of Ga-polar GaN NWs. Instead, sparse N-polar GaN nanowires grow embedded in a Ga-polar GaN layer. These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si(x)N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar. Due to the strong impact of the polarity on the properties of GaN-based devices, these results are not only essential to understand the spontaneous formation of GaN nanowires but also of high technological relevance.

  15. Templates for integrated nanofiber growth

    DEFF Research Database (Denmark)

    Oliveira Hansen, Roana Melina de

    Para-hexaphenylene (p6P) molecules have the ability to self-assemble into organic nanofibers. These nanofibers hold unique optoelectronic properties, which make them interesting candidates as elements in electronic and optoelectronic devices. Typically these nanofibers are grown on specific single......, high-volume integration. Besides such single-crystalline templates, the nanofibers can also be grown on non-crystalline gold surfaces, on which the orientation of the nanofibers can be manipulated by structuring the gold surface prior to p6P deposition. In this work, a novel method for in-situ growth...... of p6P nanofibers on nano-structured gold surfaces is presented. The substrates are prepared by conventional nanofabrication techniques such as e-beam lithography and metal deposition, which increase their potential as device platforms. Some of the results presented here demonstrate, that both...

  16. Testing by C++ template metaprograms

    CERN Document Server

    Pataki, Norbert

    2010-01-01

    Testing is one of the most indispensable tasks in software engineering. The role of testing in software development has grown significantly because testing is able to reveal defects in the code in an early stage of development. Many unit test frameworks compatible with C/C++ code exist, but a standard one is missing. Unfortunately, many unsolved problems can be mentioned with the existing methods, for example usually external tools are necessary for testing C++ programs. In this paper we present a new approach for testing C++ programs. Our solution is based on C++ template metaprogramming facilities, so it can work with the standard-compliant compilers. The metaprogramming approach ensures that the overhead of testing is minimal at runtime. This approach also supports that the specification language can be customized among other advantages. Nevertheless, the only necessary tool is the compiler itself.

  17. A Template for Design Personas:

    DEFF Research Database (Denmark)

    Nielsen, Lene; Hansen, Kira Storgaard; Stage, Jan;

    2015-01-01

    The persona method is gaining widespread use and support. Many researchers have reported from single cases and from novel domains on how they have used the method. However, the way companies and design groups describe personas has not been the focus of attention. This paper analyses 47 descriptions...... from 13 companies and compares these to an analysis of recommendations from 11 templates from literature. Furthermore, 28 interviews with Danish practitioners with experience in using personas are analyzed for content on persona descriptions. The study finds that a Danish persona style has developed...... that is different from the recommendations in the lack of marketing and business related information and the absence of goals as differentiator for personas. Furthermore, the inspiration and knowledge on personas originates from co-workers and seminars and not much from literature. This indicates that the community...

  18. Template synthesis of ordered macroporous hydroxyapatite bioceramics.

    Science.gov (United States)

    Ji, Lijun; Jell, Gavin; Dong, Yixiang; Jones, Julian R; Stevens, Molly M

    2011-08-28

    Hydroxyapatite has found wide application in bone tissue engineering. Here we use a macroporous carbon template to generate highly ordered macroporous hydroxyapatite bioceramics composed of close-packed hollow spherical pores with interconnected channels. The template has advantages for the preparation of ordered materials.

  19. Screening for templates that promote crystallization

    NARCIS (Netherlands)

    Urbanus, J.; Roelands, C.P.M.; Horst, J.H. ter; Verdoes, D.; Jansens, P.J.

    2008-01-01

    In Situ Product Recovery (ISPR) applied in fermentation processes leads to improved yield and productivity of these processes. In principle, ISPR can be achieved using Template Induced Crystallization (TIC), which is one possible ISPR technique. With TIC, templates are added to the solution as a spe

  20. Indexing Images: Testing an Image Description Template.

    Science.gov (United States)

    Jorgensen, Corinne

    1996-01-01

    A template for pictorial image description to be used by novice image searchers in recording their descriptions of images was tested; image attribute classes derived in previous research were used to model the template. Results indicated that users may need training and/or more guidance to correctly assign descriptors to higher-level classes.…

  1. Fabrication of Syringe-Shaped GaN Nanorods

    Institute of Scientific and Technical Information of China (English)

    XUE Cheng-Shan; CAO Yu-Ping; WU Yu-Xin; ZHUANG Hui-Zhao; TIAN De-Heng; LIU Yi-An; HE Jian-Ting; AI Yu-Jie; SUN Li-Li; WANG Fu-Xue

    2006-01-01

    @@ Syringe-shaped GaN nanorods are synthesized on Si(111) substrates by annealing sputtered Ga2O3/BN films under flowing ammonia at temperature of 950° C. Most of the nanorods consist of a main rod and a top needle, looking like a syringe. X-ray diffraction and selected-area electron diffraction confirm that the syringe-shaped nanorods are hexagonal wurtzite GaN. Scanning electron microscopy and high-resolution transmission electron microscopy reveal that these nanorods are as long as several micrometres, with diameters ranging from 100 to 300 nm. In addition to the BN intermediate layer, the proper annealing temperature has been demonstrated to be a crucial factor for the growth of syringe-shaped nanorods by this method.

  2. ITON Schottky contacts for GaN based UV photodetectors

    Science.gov (United States)

    Vanhove, N.; John, J.; Lorenz, A.; Cheng, K.; Borghs, G.; Haverkort, J. E. M.

    2006-12-01

    Lateral Schottky ultraviolet detectors were fabricated in GaN using indium-tin-oxynitride (ITON) as a contact metal. The GaN semiconductor material was grown on 2 in. sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The Schottky contact has been realized using ITON that has been deposited using sputter techniques. I- V characteristics have been measured with and without UV illumination. The device shows photo-to-dark current ratios of 10 3 at -1 V bias. The spectral responsivity of the UV detectors has been determined. The high spectral responsivity of more than 30 A/W at 240 nm is explained by a high internal gain caused by generation-recombination centers at the ITON/GaN interface. Persistent photocurrent effect has been observed in UV light (on-off) switching operation, time constant and electron capture coefficient of the transition has been determined.

  3. Indirect interband transition in hexagonal GaN

    Energy Technology Data Exchange (ETDEWEB)

    Lancry, O; Pichonat, E [Laboratoire de Spectrochimie Infrarouge et Raman (LASIR), UMR CNRS 8516, Universite des Sciences et Technologies de Lille, bat C5, 59655 Villeneuve d' Ascq cedex (France); Farvacque, J-L [Unite Materiaux et Transformations (UMET), UMR CNRS 8207, Universite des Sciences et Technologies de Lille, bat C6, 59655 Villeneuve d' Ascq cedex (France); Gaquiere, C, E-mail: emmanuelle.pichonat@univ-lille1.fr [Institut d' Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq cedex (France)

    2011-02-23

    In this paper, we report on optical investigations with Raman experiment to underline a new ultraviolet (UV) luminescence band in hexagonal gallium nitride (GaN) at 4.56 eV. GaN is a direct band gap semiconductor, the photoluminescence peak corresponding to the energy gap at 3.43 eV dominates the spectrum. Nevertheless, other electronic interband transitions can appear on the spectrum: the electronic indirect interband transitions. We attribute one of them to the observed new photoluminescence band at 4.56 eV. This interpretation is supported by photoluminescence spectra obtained on three different samples at room temperature and at -50 deg. C with UV excitation source: mbd-266 nm solid laser (4.66 eV) and by the study of three criteria: the partly opposite parities of initial and final wave function, the implication of acoustic phonons and temperature control.

  4. Step bunching on the vicinal GaN(0001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Ramana Murty, M. V.; Fini, P.; Stephenson, G. B.; Thompson, Carol; Eastman, J. A.; Munkholm, A.; Auciello, O.; Jothilingam, R.; DenBaars, S. P.; Speck, J. S.

    2000-10-15

    Nominally 2{sup o} vicinal GaN(0001) surfaces exhibit monolayer-height steps at 990{sup o}C in the metal-organic chemical vapor deposition environment. Real-time x-ray scattering observations at 715--990{sup o}C indicate that there is a tendency for step bunching during growth. Below 850{sup o}C, step bunches nucleated during growth remain and coarsen after growth, while above 850{sup o}C, the surface reverts to monolayer-height steps after growth. Surfaces vicinal toward the {l_brace}1{bar 1}00{r_brace} and the {l_brace}11{bar 2}0{r_brace} planes exhibit similar behavior. We suggest a simple equilibrium surface orientational phase diagram for vicinal GaN(0001) that is consistent with these observations.

  5. Study of Charge Carrier Transport in GaN Sensors

    Directory of Open Access Journals (Sweden)

    Eugenijus Gaubas

    2016-04-01

    Full Text Available Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects.

  6. Study of Charge Carrier Transport in GaN Sensors.

    Science.gov (United States)

    Gaubas, Eugenijus; Ceponis, Tomas; Kuokstis, Edmundas; Meskauskaite, Dovile; Pavlov, Jevgenij; Reklaitis, Ignas

    2016-04-18

    Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE) GaN material have been estimated as μe = 1000 ± 200 cm²/Vs for electrons, and μh = 400 ± 80 cm²/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects.

  7. Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

    Science.gov (United States)

    Ko, Young-Ho; Bae, Sung-Bum; Kim, Sung-Bock; Kim, Dong Churl; Leem, Young Ahn; Cho, Yong-Hoon; Nam, Eun-Soo

    2016-07-01

    Crack-free AlGaN template has been successfully grown over entire 2-in. wafer by using 2-step selective-area growth (SAG). The GaN truncated structure was obtained by vertical growth mode with low growth temperature. AlGaN of second step was grown under lateral growth mode. Low pressure enhanced the relative ratio of lateral to vertical growth rate as well as absolute overall growth rate. High V/III ratio was favorable for lateral growth mode. Crack-free planar AlGaN was obtained under low pressure of 30 Torr and high V/III ratio of 4400. The AlGaN was crack-free over entire 2-in. wafer and had quite uniform Al-mole fraction. The dislocation density of the AlGaN with 20% Al-composition was as low as ~7.6×108 /cm2, measured by cathodoluminescence. GaN/AlGaN multi-quantum well (MQW) with cladding and waveguide layers were grown on the crack-free AlGaN template with low dislocation density. It was confirmed that the MQW on the AlGaN template emitted the stimulated emission at 355.5 nm through optical pumping experiment. The AlGaN obtained by 2-step SAG would provide high crystal quality for highly-efficient optoelectronic devices as well as the ultraviolet laser diode.

  8. Optical properties of Yb ions in GaN epilayer

    Science.gov (United States)

    Jadwisienczak, W. M.; Lozykowski, H. J.

    2003-07-01

    In recent years, an important effort in semiconductor materials research has been devoted to III-nitrides semiconductors doped with rare earth ions due to the high potential of these materials in light-emitting device applications. Ytterbium (Yb 3+) is one of a few lanthanide ions which have not been investigated as an optically active center in these materials yet. In this paper we report the observation of luminescence from GaN films grown on sapphire (0 0 0 1) substrate by metal organic chemical vapor deposition and doped by implantation with Yb 3+ ions. The high resolution photo- and cathodoluminescence spectra of GaN:Yb 3+ were studied at different excitation conditions in temperatures ranging from 8 to 330 K and revealed weak thermal quenching. The luminescence emission lines are assigned to transitions between the spin-orbit levels 2F 5/2 → 2F 7/2 of Yb 3+ (4f 13). The analysis of the Yb luminescence spectra allowed us to suggest the energy level diagram of the crystal-field-split 4f 13 levels for the Yb ion center. The most probable lattice location of Yb in GaN is the substitutional Ga site. Furthermore, the luminescence kinetics of internal transitions of Yb 3+ incorporated in GaN was investigated by means of decay and time-resolved luminescence measurements. It was found that the ytterbium decay is non-exponential with dominant exponential term of ˜100 μs with little dependence on the ambient temperature. The results indicate that Yb-doped GaN epilayer may be suitable as a material for near infrared optoelectronic devices.

  9. Temperature Dependence of GaN HEMT Small Signal Parameters

    Directory of Open Access Journals (Sweden)

    Ali M. Darwish

    2011-01-01

    Full Text Available This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150°C range. The changes with temperature for transconductance (m, output impedance (ds and ds, feedback capacitance (dg, input capacitance (gs, and gate resistance (g are measured. The variations with temperature are established for m, ds, ds, dg, gs, and g in the GaN technology. This information is useful for MMIC designs.

  10. Photoluminescence of ion-implanted GaN

    Science.gov (United States)

    Pankove, J. I.; Hutchby, J. A.

    1976-01-01

    Thirty-five elements were implanted in GaN. Their photoluminescence spectra were measured and compared to those of an unimplanted control sample. Most impurities emit a peak at about 2.15 eV. Mg, Zn, Cd, Ca, As, Hg, and Ag have more characteristic emissions. Zn provides the most efficient recombination center. A set of midgap states is generated during the damage-annealing treatment.

  11. Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

    KAUST Repository

    Das, Ayan

    2011-08-01

    We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.

  12. Model for radiation damage buildup in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Titov, A.I. [State Polytechnic University, St. Petersburg 195251 (Russian Federation); Karaseov, P.A., E-mail: platon.karaseov@rphf.spbstu.ru [State Polytechnic University, St. Petersburg 195251 (Russian Federation); Kataev, A.Yu. [State Polytechnic University, St. Petersburg 195251 (Russian Federation); Azarov, A.Yu. [Department of Physics, University of Oslo, P.O. Box 1048, Blindern, Oslo NO-0316 (Norway); Kucheyev, S.O. [Lawrence Livermore National Laboratory, Livermore, CA 94551 (United States)

    2012-04-15

    We propose a model that explains both saturation and a shift of the maximum of bulk disorder profiles in ion-implanted GaN. Our model is based on two main assumptions that (i) the advancing amorphous/crystalline interface acts as a perfect sink for mobile point defects generated in the crystal bulk and (ii) the diffusion length of mobile defects increases with increasing ion fluence due to saturation of defect sinks in the bulk.

  13. Voltage controlled terahertz transmission through GaN quantum wells

    OpenAIRE

    Laurent, T.; Sharma, R.; Torres, J.; Nouvel, P; Blin, S.; Varani, L.; Cordier, Y.; Chmielowska, M.; Chenot, S.; Faurie, JP; Beaumont, B.; P. Shiktorov; Starikov, E.; Gruzinskis, V.; Korotyevyev, V.

    2011-01-01

    We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement ...

  14. Template Assembly for Detailed Urban Reconstruction

    KAUST Repository

    Nan, Liangliang

    2015-05-04

    We propose a new framework to reconstruct building details by automatically assembling 3D templates on coarse textured building models. In a preprocessing step, we generate an initial coarse model to approximate a point cloud computed using Structure from Motion and Multi View Stereo, and we model a set of 3D templates of facade details. Next, we optimize the initial coarse model to enforce consistency between geometry and appearance (texture images). Then, building details are reconstructed by assembling templates on the textured faces of the coarse model. The 3D templates are automatically chosen and located by our optimization-based template assembly algorithm that balances image matching and structural regularity. In the results, we demonstrate how our framework can enrich the details of coarse models using various data sets.

  15. Solvable model for template coexistence in protocells

    CERN Document Server

    Fontanari, J F

    2012-01-01

    Compartmentalization of self-replicating molecules (templates) in protocells is a necessary step towards the evolution of modern cells. However, coexistence between distinct template types inside a protocell can be achieved only if there is a selective pressure favoring protocells with a mixed template composition. Here we study analytically a group selection model for the coexistence between two template types using the diffusion approximation of population genetics. The model combines competition at the template and protocell levels as well as genetic drift inside protocells. At the steady state, we find a continuous phase transition separating the coexistence and segregation regimes, with the order parameter vanishing linearly with the distance to the critical point. In addition, we derive explicit analytical expressions for the critical steady-state probability density of protocell compositions.

  16. Solvable model for template coexistence in protocells

    Science.gov (United States)

    Fontanari, J. F.; Serva, M.

    2013-02-01

    Compartmentalization of self-replicating molecules (templates) in protocells is a necessary step towards the evolution of modern cells. However, coexistence between distinct template types inside a protocell can be achieved only if there is a selective pressure favoring protocells with a mixed template composition. Here we study analytically a group selection model for the coexistence between two template types using the diffusion approximation of population genetics. The model combines competition at the template and protocell levels as well as genetic drift inside protocells. At the steady state, we find a continuous phase transition separating the coexistence and segregation regimes, with the order parameter vanishing linearly with the distance to the critical point. In addition, we derive explicit analytical expressions for the critical steady-state probability density of protocell compositions.

  17. Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan)

    2016-04-11

    The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  18. Metal contacts on ZnSe and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  19. Rare earth point defects in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Sanna, S.

    2007-12-14

    In this work we investigate rare earth doped GaN, by means of theoretical simulations. The huge unit cells necessary to model the experimental system, where dilute amount of rare earth ions are used, are handled with the charge self consistent density-functional based-tight binding (SCC-DFTB) calculational scheme. The method has been extended to include LDA+U and simplified self interaction corrected (SIC)-like potentials for the simulation of systems with localised and strongly correlated electrons. A set of tight-binding parameters has been created to model the interaction of GaN with some dopants, including a selection of lanthanide ions interesting due to their optical or magnetic properties (Pr, Eu, Gd, Er and Tm). The f-electrons were treated as valence electrons. A qualitatively correct description of the band gap is crucial for the simulation of rare earth doped GaN, because the luminescence intensity of the implanted samples depends on the size of the host band gap and because the rare earths could introduce charge transition levels near the conduction band. In this work these levels are calculated with the Slater-Janak (SJ) transition state model, which allows an approximate calculation of the charge transition levels by analysing the Kohn-Sham eigenvalues of the DFT. (orig.)

  20. Annealing of GaN under high pressure of nitrogen

    CERN Document Server

    Porowski, S; Kolesnikov, D; Lojkowski, W; Jager, V; Jäger, W; Bogdanov, V; Suski, T; Krukowski, S

    2002-01-01

    Gallium nitride, aluminum nitride and indium nitride are basic materials for blue optoelectronic devices. The essential part of the technology of these devices is annealing at high temperatures. Thermodynamic properties of the Ga-N system and their consequences to application of high nitrogen pressure for the annealing of GaN based materials are summarized. The diffusion of Zn, Mg and Au in high dislocation density heteroepitaxial GaN/Al sub 2 O sub 3 layers will be compared with the diffusion in dislocation-free GaN single crystals and homoepitaxial layers. It will be shown that high dislocation density can drastically change the diffusion rates, which strongly affects the performance of nitride devices. Inter-diffusion of Al, Ga and In in AlGaN/GaN and InGaN/GaN quantum well (QW) structures will be also considered. It will be shown that in contrast to stability of metal contacts, which is strongly influenced by dislocations, the inter-diffusion of group III atoms in QW structures is not affected strongly by...

  1. Study of neutron irradiated structures of ammonothermal GaN

    Science.gov (United States)

    Gaubas, E.; Ceponis, T.; Deveikis, L.; Meskauskaite, D.; Miasojedovas, S.; Mickevicius, J.; Pavlov, J.; Pukas, K.; Vaitkus, J.; Velicka, M.; Zajac, M.; Kucharski, R.

    2017-04-01

    Study of the radiation damage in GaN-based materials becomes an important aspect for possible application of the GaN detectors in the harsh radiation environment at the Large Hadron Collider and at other particle acceleration facilities. Intentionally doped and semi-insulating bulk ammonothermal GaN materials were studied to reveal the dominant defects introduced by reactor neutron irradiations. These radiation defects have been identified by combining electron spin resonance and transmission spectroscopy techniques. Characteristics of carrier lifetime dependence on neutron irradiation fluence were examined. Variations of the response of the capacitor-type sensors with neutron irradiation fluence have been correlated with the carrier lifetime changes. The measurements of the photoconductivity and photoluminescence transients have been used to study the variation of the parameters of radiative and non-radiative recombination. The examined characteristics indicate that AT GaN as a particle sensing material is radiation hard up to high hadron fluences  ⩾1016 cm‑2.

  2. Abnormal selective area growth of irregularly-shaped GaN structures on the apex of GaN pyramids and its application for wide spectral emission

    Science.gov (United States)

    Yu, Yeon Su; Lee, Jun Hyeong; Ahn, Hyung Soo; Yang, Min

    2014-12-01

    We report on the growth and the characterization of three-dimensional randomly-shaped InGaN/GaN structures selectively grown on the apex of GaN pyramids for the purpose of enlarging the emission spectral range. We found that the variations in the shape and the size of the three-dimensional GaN structures depend on the growth temperature and the surface area for selective growth under intentional turbulence in the gas stream. The selectively grown GaN structures grown at 1020 °C have irregular shape, while the samples grown at 1100 °C have rather uniform hexagonal pyramidal shapes. Irregularly shaped GaN structures were also obtained on the apex of GaN pyramids when the SiO2 mask was removed to 1/10 of the total height of the underlying GaN pyramid. When only 1/5 of the SiO2 mask was removed, however, the selectively grown GaN structures had similar hexagonal pyramidal shapes resembling those of the underlying GaN pyramids. The CL (Cathodoluminescence) spectra of the InGaN layers grown on the randomly shaped GaN structures showed a wide emission spectral range from 388 to 433 nm due to the non-uniform thickness and spatially inhomogeneous indium composition of the InGaN layers. This new selective growth method might have great potential for applications of non-phosphor white light emitting diodes (LEDs) with optimized growth conditions for InGaN active layers of high indium composition and with optimum process for fabrication of electrodes for electrical injection.

  3. Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

    Science.gov (United States)

    Kang, Eun-Sil; Ju, Jin-Woo; Kim, Jin Soo; Ahn, Haeng-Keun; Lee, June Key; Kim, Jin Hyeok; Shin, Dong-Chan; Lee, In-Hwan

    2007-11-01

    InGaN/GaN multiple quantum wells (MQWs) were successfully grown on the inclined GaN(1101) microfacets. Conventional photolithography and subsequent growth of GaN were employed to generate the V-shaped microfacets along (1120) direction. The well-developed microfacets observed by scanning electron microscopy and the clear transmission electron microscope interfacial images indicated that the MQW was successfully grown on the GaN microfacets. Interestingly, cathodoluminescence (CL) spectra measured on the microfacets showed a continuous change in the luminescence peak positions. The CL peaks were shifted to a longer wavelength from 420 nm to 440 nm as the probing points were changed along upward direction. This could be attributed to the nonuniform distribution of the In composition and/or the wavefunction overlapping between adjacent wells. Present works thus propose a novel route to fabricate a monolithic white light emitting diode without phosphors by growing the InGaN/GaN MQWs on (1101) facet.

  4. Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes

    Science.gov (United States)

    Park, Ah Hyun; Chandramohan, S.; Seo, Tae Hoon; Lee, Gun Hee; Min, Kyung Hyun; Hong, Chang-Hee; Jong Kim, Myung; Suh, Eun-Kyung

    2016-07-01

    Using single-walled carbon nanotubes (SWCNTs) as nanomasks on an undoped GaN template, a significant biaxial stress relaxation was achieved in the subsequently-grown Si-doped n-GaN layer. Enhanced near band edge (NBE) emission intensity, similar free carrier concentrations, and the reduced peak width of the asymmetric (102) crystallographic plane all confirmed the suppression of threading dislocations due to the nanoepitaxial growth process. Temperature-dependent photoluminescence (PL) revealed improved internal quantum efficiency (IQE) of InGaN/GaN multi-quantum wells (MQWs) grown on this n-GaN layer. Furthermore, enhanced light output power and a remarkable reduction in efficiency droop were observed for the blue light-emitting diodes (LEDs), especially at higher injection currents. Our results emphasize the strong potential for SWCNTs as nanomasks in the heteroepitaxy of GaN-based devices without the exploitation of complicated lithography or etching processes.

  5. A Bayesian method for pulsar template generation

    CERN Document Server

    Imgrund, M; Kramer, M; Lesch, H

    2015-01-01

    Extracting Times of Arrival from pulsar radio signals depends on the knowledge of the pulsars pulse profile and how this template is generated. We examine pulsar template generation with Bayesian methods. We will contrast the classical generation mechanism of averaging intensity profiles with a new approach based on Bayesian inference. We introduce the Bayesian measurement model imposed and derive the algorithm to reconstruct a "statistical template" out of noisy data. The properties of these "statistical templates" are analysed with simulated and real measurement data from PSR B1133+16. We explain how to put this new form of template to use in analysing secondary parameters of interest and give various examples: We implement a nonlinear filter for determining ToAs of pulsars. Applying this method to data from PSR J1713+0747 we derive ToAs self consistently, meaning all epochs were timed and we used the same epochs for template generation. While the average template contains fluctuations and noise as unavoida...

  6. Templated Growth of Magnetic Recording Media

    Science.gov (United States)

    Sundar, Vignesh

    Current and potential next-generation magnetic recording technologies are based on the writing and reading of bits on a magnetic thin film with a granular microstructure, with grains of the magnetic material surrounded by an amorphous segregant. In order to realize the highest achievable data storage capabilities, there is a need for better control of the magnetic media microstructure, particularly in terms of minimizing grain size and grain boundary thickness distributions. In this work, a guided magnetic media growth is attempted by creating a pre-fabricated template with a specific material and morphology. The template is designed in such a way that, when magnetic media consisting of the magnetic alloy and segregant are sputtered, the sites on the template result in a controlled two-phase growth of magnetic media. The template is fabricated using self-assembling block copolymers, which can be used to fabricate nanostructures with a regular hexagonal lattice of spheres of one block in the other's matrix. These are then used as etch-masks to fabricate the template. In this thesis, we describe the approach used to fabricate these templates and demonstrate the two-phase growth of magnetic recording media. In such an approach, the magnetic grain size is defined by the uniform pitch of the block copolymer pattern, resulting in a uniform microstructure with much better grain size distribution than can be obtained with conventional un-templated media growth. The templated growth technique is also a suitable additive technique for the fabrication of Bit Patterned Media, another potential next-generation technology wherein the magnetic bits are isolated patterned islands. Combining nanoimprint lithography with templated growth, we can generate a long range spatially ordered array of magnetic islands with no etching of the magnetic material.

  7. Theoretical study of Structural and analytical potential energy functions of GaN

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Using Density Function Theory,the present work has optimized the equilibrium geometry of GaN. Murrell-Sorbie analytical potential energy functions of GaN have been derived by using ab initio data and the least-square fitting method,and harmonic frequency,force constant and spectroscopic data also have been calculated.

  8. Luminescence evolution of porous GaN thin films prepared via UV-assisted electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Cheah, S.F., E-mail: sookfongcheah@yahoo.com [Nano-Optoelectronic Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Lee, S.C. [Nano-Optoelectronic Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ng, S.S.; Yam, F.K.; Abu Hassan, H.; Hassan, Z. [Nano-Optoelectronic Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2015-03-15

    Porous gallium nitride (GaN) thin films with different surface morphologies and free carriers properties were fabricated from Si-doped GaN thin films using ultra-violet assisted electrochemical etching approach under various etching voltages. Fluctuation of luminescence signals was observed in the photoluminescence spectra of porous GaN thin films. Taking advantage of the spectral sensitivity of infrared attenuated total reflection spectroscopy on semiconductor materials, roles of free carriers and porous structure in controlling luminescence properties of GaN were investigated thoroughly. The results revealed that enhancement in luminescence signal is not always attained upon porosification. Although porosification is correlated to the luminescence enhancement, however, free carrier is the primary factor to enhance luminescence intensity. Due to unavoidable significant reduction of free carriers from Si-doped GaN in the porosification process, control of etching depth (i.e., thickness of porous layer formed from the Si-doped layer) is critical in fabricating porous GaN thin film with enhanced luminescence response. - Highlights: • Various pore morphologies with free carrier properties are produced by Si-doped GaN. • Free carriers are important to control the luminescence signal of porous GaN. • Enhancement of luminescence signal relies on the pore depth of Si-doped layer.

  9. Transmission measurement of the photonic band gap of GaN photonic crystal slabs

    NARCIS (Netherlands)

    Caro, J.; Roeling, E.M.; Rong, B.; Nguyen, H.M.; Van der Drift, E.W.J.M.; Rogge, S.; Karouta, F.; Van der Heijden, R.W.; Salemink, H.W.M.

    2008-01-01

    A high-contrast-ratio (30 dB) photonic band gap in the near-infrared transmission of hole-type GaN two-dimensional photonic crystals (PhCs) is reported. These crystals are deeply etched in a 650 nm thick GaN layer grown on sapphire. A comparison of the measured spectrum with finite difference time d

  10. Conduction, reverse conduction and switching characteristics of GaN E-HEMT

    DEFF Research Database (Denmark)

    Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe;

    2015-01-01

    In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using...

  11. Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles

    Directory of Open Access Journals (Sweden)

    Tudor Braniste

    2016-09-01

    Full Text Available Nanotechnology is a rapidly growing and promising field of interest in medicine; however, nanoparticle–cell interactions are not yet fully understood. The goal of this work was to examine the interaction between endothelial cells and gallium nitride (GaN semiconductor nanoparticles. Cellular viability, adhesion, proliferation, and uptake of nanoparticles by endothelial cells were investigated. The effect of free GaN nanoparticles versus the effect of growing endothelial cells on GaN functionalized surfaces was examined. To functionalize surfaces with GaN, GaN nanoparticles were synthesized on a sacrificial layer of zinc oxide (ZnO nanoparticles using hydride vapor phase epitaxy. The uptake of GaN nanoparticles by porcine endothelial cells was strongly dependent upon whether they were fixed to the substrate surface or free floating in the medium. The endothelial cells grown on surfaces functionalized with GaN nanoparticles demonstrated excellent adhesion and proliferation, suggesting good biocompatibility of the nanostructured GaN.

  12. High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN

    DEFF Research Database (Denmark)

    Jorgensen, J.E.; Jakobsen, J.M.; Jiang, Jianzhong

    2003-01-01

    Bulk- and nanocrystalline GaN have been studied by high-pressure energy-dispersive X-ray diffraction. Pressure-induced structural phase transitions from the wurtzite to the NaCl phase were observed in both materials. The transition pressure was found to be 40 GPa for the bulk-crystalline GaN, while...

  13. Terahertz study of m-plane GaN thin fims

    Science.gov (United States)

    Quadir, Shaham; Jang, Der-Jun; Lin, Ching-Liang; Lo, Ikai

    2014-03-01

    We investigate the optical properties of m-plane GaN thin films using the terahertz time domain spectroscopy. The m-plane GaN thin films were grown on γ-LiAlO2 substrates with buffer layers of low temperature grown GaN. The thin films were illuminated with terahertz radiation generated by a LT-GaAs antenna and the transmitted signal was detected by a ZnTe crystal. The polarization of the terahertz wave was chosen to be either parallel or perpendicular to the GaN [0001] direction. We compared the transmitted signals of the m-plane GaN thin films to that of the LAO substrate. The samples as well as the LAO substrate exhibited polarization dependence of absorption in terahertz spectrum. The carrier densities and the mobilities were derived from the transmittance of the THz wave using extended Drude model. We found, in all samples, both the carrier densities and mobilities along the GaN [0001] direction were smaller than those along the GaN [1120] direction due to the stripe formation along the GaN [1120].

  14. Templating irreversible covalent macrocyclization by using anions.

    Science.gov (United States)

    Kataev, Evgeny A; Kolesnikov, Grigory V; Arnold, Rene; Lavrov, Herman V; Khrustalev, Victor N

    2013-03-11

    Inorganic anions were used as templates in the reaction between a diamine and an activated diacid to form macrocyclic amides. The reaction conditions were found to perform the macrocyclization sufficiently slow to observe a template effect. A number of analytical methods were used to clarify the reaction mechanisms and to show that the structure of the intermediate plays a decisive role in determining the product distribution. For the macrocyclization under kinetic control, it was shown that the amount of a template, the conformational rigidity of building blocks, and the anion affinities of reaction components and intermediates are important parameters that one should take into consideration to achieve high yields.

  15. Evaluation of subsurface damage in GaN substrate induced by mechanical polishing with diamond abrasives

    Energy Technology Data Exchange (ETDEWEB)

    Aida, Hideo, E-mail: h-aida@namiki.net [NJC Institute of Technology, Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi, Tokyo 123-8511 (Japan); KASTEC, Kyushu University, Kasuga-shi, Fukuoka 816-8580 (Japan); Takeda, Hidetoshi; Kim, Seong-Woo; Aota, Natsuko; Koyama, Koji [NJC Institute of Technology, Namiki Precision Jewel Co., Ltd., 3-8-22 Shinden, Adachi, Tokyo 123-8511 (Japan); Yamazaki, Tsutomu; Doi, Toshiro [KASTEC, Kyushu University, Kasuga-shi, Fukuoka 816-8580 (Japan)

    2014-02-15

    The relationship between the depth of the subsurface damage (SSD) and the size of the diamond abrasive used for mechanical polishing (MP) of GaN substrates was investigated in detail. GaN is categorized as a hard, brittle material, and material removal in MP proceeds principally to the fracture of GaN crystals. Atomic force microscopy and cathodoluminescence imaging revealed that the mechanical processing generated surface scratches and SSD. The SSD depth reduced as the diamond abrasive size reduced. A comparison of the relationship between the SSD depth and the diamond abrasive size used in the MP of GaN with the same relationship for typical brittle materials such as glass substrates suggests that the MP of GaN substrates proceeds via the same mechanism as glass.

  16. Frequency response and design consideration of GaN SAM avalanche photodiodes

    Science.gov (United States)

    Xie, Feng; Yang, Guofeng; Zhou, Dong; Lu, Hai; Wang, Guosheng

    2016-11-01

    In this work, a method is developed for estimating the frequency response characteristics of GaN avalanche photodiodes (APDs) with separated absorption and multiplication regions (SAM). The method calculates the total diode current with varying frequency by solving transport equations analytically and uses a commercial device simulator as a supplement for determining the exact electrical field profile within the device. Due to the high carrier saturation velocity of GaN, a high-gain-bandwidth product over THz is found achievable for GaN SAM-APDs. The potential performances of GaN SAM-APDs with different structural designs are further compared through numerical studies. It is found that a close-to-reach-through design is attractive for simultaneously achieving both relatively low operation voltage and high working frequency. In addition, transit-time limit and RC-delay limit for the frequency response of GaN SAM-APDs are also discussed.

  17. Surface decomposition and annealing behavior of GaN implanted with Eu

    CERN Document Server

    Liu Hua Ming; Chen Chang Chun; Wang Sen; Zhu De Zhang; Xu Hong Jie

    2002-01-01

    Investigations on surface decomposition of GaN implanted with low energy (80 keV) Eu ion to a low dose (1 x 10 sup 1 sup 4 cm sup - sup 2), and its annealing behavior under high temperature (1050 degree C) in N sub 2 are performed. The as-grown, as-implanted and annealed GaN films are characterized by proton elastic scattering (PES), Rutherford backscattering spectrometry (RBS), photoluminescence (PL) and atomic force microscopy (AFM). The results show that Eu ion implantation induces radiation defects and decomposition of GaN. The GaN surface decomposition is more serious during high temperature annealing. The atomic ratio of N in as-grown, as-implanted and annealed GaN film is 47 at.%, 44 at.% and 40 at.%, respectively. As a result, a rough Ga-rich layer is formed at the surface, though the lattice defects are partly removed after high temperature annealing

  18. Synchrotron X-ray diffraction analysis of epitaxial GaN layer laterally overgrown

    CERN Document Server

    Feng Gan; Wang Yu Tian; Yang Hui; Liang Jun Wu; Zheng Wen Li; Jia Quan Jie

    2002-01-01

    The GaN layer grown by epitaxial lateral overgrowth on sapphire (0001) has been investigated by synchrotron X-ray diffraction. The results show that ELO GaN stripes bend towards the SiN sub x mask in directions perpendicular to the stripe direction. This lead to the GaN (0001) crystal planes in the 'wings' (overgrown GaN) exhibit crystallographic tilts away from those in the 'window' (seed) regions. The GaN (0002) diffraction was used to determine the grain sizes in the wing region and window region, respectively. It is found that the grain size in the wing region increases about three times comparing to those in window region

  19. Ultra-high Efficiency DC-DC Converter using GaN Devices

    DEFF Research Database (Denmark)

    Ramachandran, Rakesh

    2016-01-01

    The demands for high efficiency dc-dc power converters are increasing day by day in various applications such as telecommunication, data-centers, electric vehicles and various renewable energy systems. Silicon (Si) has been used as the semiconductor material in majority of the power devices...... properties of GaN devices can be utilized in power converters to make them more compact and highly efficient. This thesis entitled “Ultra-high Efficiency DC-DC Converter using GaN devices” focuses on achieving ultra-high conversion efficiency in an isolated dc-dc converter by the optimal utilization of Ga......N devices. Simple replacement of Si or SiC devices with GaN devices in the converter will not give an expected increase in efficiency or any improvement in the performance of the converter. The use of GaN devices has defined another dimension in the design of power converters, which mainly deals...

  20. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

    Science.gov (United States)

    Su, Ming; Chen, Chingchi; Rajan, Siddharth

    2013-07-01

    GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600-1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles.

  1. GaN: From three- to two-dimensional single-layer crystal and its multilayer van der Waals solids

    Science.gov (United States)

    Onen, A.; Kecik, D.; Durgun, E.; Ciraci, S.

    2016-02-01

    Three-dimensional (3D) GaN is a III-V compound semiconductor with potential optoelectronic applications. In this paper, starting from 3D GaN in wurtzite and zinc-blende structures, we investigated the mechanical, electronic, and optical properties of the 2D single-layer honeycomb structure of GaN (g -GaN ) and its bilayer, trilayer, and multilayer van der Waals solids using density-functional theory. Based on high-temperature ab initio molecular-dynamics calculations, we first showed that g -GaN can remain stable at high temperature. Then we performed a comparative study to reveal how the physical properties vary with dimensionality. While 3D GaN is a direct-band-gap semiconductor, g -GaN in two dimensions has a relatively wider indirect band gap. Moreover, 2D g -GaN displays a higher Poisson ratio and slightly less charge transfer from cation to anion. In two dimensions, the optical-absorption spectra of 3D crystalline phases are modified dramatically, and their absorption onset energy is blueshifted. We also showed that the physical properties predicted for freestanding g -GaN are preserved when g -GaN is grown on metallic as well as semiconducting substrates. In particular, 3D layered blue phosphorus, being nearly lattice-matched to g -GaN , is found to be an excellent substrate for growing g -GaN . Bilayer, trilayer, and van der Waals crystals can be constructed by a special stacking sequence of g -GaN , and they can display electronic and optical properties that can be controlled by the number of g -GaN layers. In particular, their fundamental band gap decreases and changes from indirect to direct with an increasing number of g -GaN layers.

  2. Templated and template-free fabrication strategies for zero-dimensional hollow MOF superstructures.

    Science.gov (United States)

    Kim, Hyehyun; Lah, Myoung Soo

    2017-03-23

    Various fabrication strategies for hollow metal-organic framework (MOF) superstructures are reviewed and classified using various types of external templates and their properties. Hollow MOF superstructures have also been prepared without external templates, wherein unstable intermediates obtained during reactions convert to the final hollow MOF superstructures. Many hollow MOF superstructures have been fabricated using hard templates. After the core-shell core@MOF structure was prepared using a hard template, the core was selectively etched to generate a hollow MOF superstructure. Another approach for generating hollow superstructures is to use a solid reactant as a sacrificial template; this method requires no additional etching process. Soft templates such as discontinuous liquid/emulsion droplets and gas bubbles in a continuous soft phase have also been employed to prepare hollow MOF superstructures.

  3. Preparation of Porous GaN Buffer and Its Influence on the Residual Stress of GaN Epilayers Grown by Hydride Vapor Phase Epitaxy

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The preparation of porous structure on the molecular beam epitaxy (MBE)-grown mixed-polarity GaN epilayers was reported by using the wet chemical etching method. The effect of this porous structure on the residual stress of subsequent-growth GaN epilayers was studied by Raman and photoluminescence (PL) spectrum.Substantial decrease in the biaxial stresse can be achieved by employing the porous buffers in the hydride vapour phase epitaxy (HVPE) epilayer growth.

  4. Template for safety reports with descriptive example

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-12-01

    This report provides a template for future safety reports on long-term safety in support of important decisions and permit applications in connection with the construction of a deep repository system. The template aims at providing a uniform structure for describing long-term safety, after the repository has been closed and sealed. The availability of such a structure will simplify both preparation and review of the safety reports, and make it possible to follow how safety assessments are influenced by the progressively more detailed body of data that emerges. A separate section containing `descriptive examples` has been appended to the template. This section illustrates what the different chapters of the template should contain. 279 refs.

  5. Surgical Templates for Dental Implant Positioning; Current ...

    African Journals Online (AJOL)

    applied scientifically based research techniques to develop an endosseous implant that forms ... KEYWORDS: Dental implants, surgical templates, surgical procedure, stent .... during the surgical stage for single implant therapy.[24] Afterward,.

  6. Nanowires and nanostructures fabrication using template methods

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.; Vlad, A.;

    2009-01-01

    One of the great challenges of today is to find reliable techniques for the fabrication of nanomaterials and nanostructures. Methods based on template synthesis and on self organization are the most promising due to their easiness and low cost. This paper focuses on the electrochemical synthesis ...... of nanowires and nanostructures using nanoporous host materials such as supported anodic aluminum considering it as a key template for nanowires based devices. New ways are opened for applications by combining such template synthesis methods with nanolithographic techniques.......One of the great challenges of today is to find reliable techniques for the fabrication of nanomaterials and nanostructures. Methods based on template synthesis and on self organization are the most promising due to their easiness and low cost. This paper focuses on the electrochemical synthesis...

  7. Template Approach for Adaptive Learning Strategies

    NARCIS (Netherlands)

    Abbing, Jana; Koidl, Kevin

    2006-01-01

    Please, cite this publication as: Abbing, J. & Koidl, K. (2006). Template Approach for Adaptive Learning Strategies. Proceedings of Adaptive Hypermedia. June, Dublin, Ireland. Retrieved June 30th, 2006, from http://dspace.learningnetworks.org

  8. Performance Evaluation of Biometric Template Update

    CERN Document Server

    Giot, Romain; Dorizzi, Bernadette

    2012-01-01

    Template update allows to modify the biometric reference of a user while he uses the biometric system. With such kind of mechanism we expect the biometric system uses always an up to date representation of the user, by capturing his intra-class (temporary or permanent) variability. Although several studies exist in the literature, there is no commonly adopted evaluation scheme. This does not ease the comparison of the different systems of the literature. In this paper, we show that using different evaluation procedures can lead in different, and contradictory, interpretations of the results. We use a keystroke dynamics (which is a modality suffering of template ageing quickly) template update system on a dataset consisting of height different sessions to illustrate this point. Even if we do not answer to this problematic, it shows that it is necessary to normalize the template update evaluation procedures.

  9. Fast Legendre moment computation for template matching

    Science.gov (United States)

    Li, Bing C.

    2017-05-01

    Normalized cross correlation (NCC) based template matching is insensitive to intensity changes and it has many applications in image processing, object detection, video tracking and pattern recognition. However, normalized cross correlation implementation is computationally expensive since it involves both correlation computation and normalization implementation. In this paper, we propose Legendre moment approach for fast normalized cross correlation implementation and show that the computational cost of this proposed approach is independent of template mask sizes which is significantly faster than traditional mask size dependent approaches, especially for large mask templates. Legendre polynomials have been widely used in solving Laplace equation in electrodynamics in spherical coordinate systems, and solving Schrodinger equation in quantum mechanics. In this paper, we extend Legendre polynomials from physics to computer vision and pattern recognition fields, and demonstrate that Legendre polynomials can help to reduce the computational cost of NCC based template matching significantly.

  10. Macroporous polymer foams by hydrocarbon templating

    OpenAIRE

    Shastri, Venkatram Prasad; Martin, Ivan; Langer, Robert

    2000-01-01

    Porous polymeric media (polymer foams) are utilized in a wide range of applications, such as thermal and mechanical insulators, solid supports for catalysis, and medical devices. A process for the production of polymer foams has been developed. This process, which is applicable to a wide range of polymers, uses a hydrocarbon particulate phase as a template for the precipitation of the polymer phase and subsequent pore formation. The use of a hydrocarbon template allows for enhanced control ov...

  11. Scalable, Fast Cloud Computing with Execution Templates

    OpenAIRE

    Mashayekhi, Omid; Qu, Hang; Shah, Chinmayee; Levis, Philip

    2016-01-01

    Large scale cloud data analytics applications are often CPU bound. Most of these cycles are wasted: benchmarks written in C++ run 10-51 times faster than frameworks such as Naiad and Spark. However, calling faster implementations from those frameworks only sees moderate (3-5x) speedups because their control planes cannot schedule work fast enough. This paper presents execution templates, a control plane abstraction for CPU-bound cloud applications, such as machine learning. Execution template...

  12. Template synthesis of monodisperse carbon nanodots

    Science.gov (United States)

    Kurdyukov, D. A.; Eurov, D. A.; Stovpiaga, E. Yu.; Kirilenko, D. A.; Konyakhin, S. V.; Shvidchenko, A. V.; Golubev, V. G.

    2016-12-01

    Monodisperse carbon nanodots in pores of mesoporous silica particles are obtained by template synthesis. This method is based on introducing a precursor (organosilane) into pores, its thermal decomposition with formation of carbon nanodots, and the template removal. Structural analysis of the nanomaterial has been performed, which showed that carbon nanodots have an approximately spherical form and a graphite-like structure. According to dynamic light scattering data, the size of carbon nanodots is 3.3 ± 0.9 nm.

  13. Lipid bilayers on nano-templates

    Science.gov (United States)

    Noy, Aleksandr; Artyukhin, Alexander B.; Bakajin, Olgica; Stoeve, Pieter

    2009-08-04

    A lipid bilayer on a nano-template comprising a nanotube or nanowire and a lipid bilayer around the nanotube or nanowire. One embodiment provides a method of fabricating a lipid bilayer on a nano-template comprising the steps of providing a nanotube or nanowire and forming a lipid bilayer around the polymer cushion. One embodiment provides a protein pore in the lipid bilayer. In one embodiment the protein pore is sensitive to specific agents

  14. Ab initio investigations of the strontium gallium nitride ternaries Sr 3GaN3 and Sr6GaN5: Promising materials for optoelectronic

    KAUST Repository

    Goumri-Said, Souraya

    2013-05-31

    Sr3GaN3 and Sr6GaN5 could be promising potential materials for applications in the microelectronics, optoelectronics and coating materials areas of research. We studied in detail their structural, elastic, electronic, optical as well as the vibrational properties, by means of density functional theory framework. Both of these ternaries are semiconductors, where Sr3GaN3 exhibits a small indirect gap whereas Sr6GaN5 has a large direct gap. Indeed, their optical properties are reported for radiation up to 40 eV. Charge densities contours, Hirshfeld and Mulliken populations, are reported to investigate the role of each element in the bonding. From the mechanical properties calculation, it is found that Sr6GaN5 is harder than Sr3GaN3, and the latter is more anisotropic than the former. The phonon dispersion relation, density of phonon states and the vibrational stability are reported from the density functional perturbation theory calculations. © 2013 IOP Publishing Ltd.

  15. Multi-template polymerase chain reaction

    Directory of Open Access Journals (Sweden)

    Elena Kalle

    2014-12-01

    Full Text Available PCR is a formidable and potent technology that serves as an indispensable tool in a wide range of biological disciplines. However, due to the ease of use and often lack of rigorous standards many PCR applications can lead to highly variable, inaccurate, and ultimately meaningless results. Thus, rigorous method validation must precede its broad adoption to any new application. Multi-template samples possess particular features, which make their PCR analysis prone to artifacts and biases: multiple homologous templates present in copy numbers that vary within several orders of magnitude. Such conditions are a breeding ground for chimeras and heteroduplexes. Differences in template amplification efficiencies and template competition for reaction compounds undermine correct preservation of the original template ratio. In addition, the presence of inhibitors aggravates all of the above-mentioned problems. Inhibitors might also have ambivalent effects on the different templates within the same sample. Yet, no standard approaches exist for monitoring inhibitory effects in multitemplate PCR, which is crucial for establishing compatibility between samples.

  16. Current steering effect of GaN nanoporous structure

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chia-Feng, E-mail: cflin@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Department of Electrical Engineering, Yale University, New Haven, CT 06520 (United States); Wang, Jing-Hao; Cheng, Po-Fu; Tseng, Wang-Po; Fan, Feng-Hsu; Wu, Kaun-Chun; Lee, Wen-Che [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Han, Jung [Department of Electrical Engineering, Yale University, New Haven, CT 06520 (United States)

    2014-11-03

    Current steering effect of InGaN light emitting diode (LED) structure was demonstrated by forming a high resistivity GaN nanoporous structure. Disk-array patterns with current-injection bridge structures were fabricated on InGaN LED devices through a focused ion beam (FIB) system. GaN nanoporous structure was formed around the FIB-drilled holes through a electrochemical (EC) wet-etching process on a n-type GaN:Si layer under the InGaN active layer. High emission intensity and small peak wavelength blueshift phenomenon of the electroluminescence spectra were observed in the EC-treated region compared with the non-treated region. The branch-like nanoporous structure was formed along the lateral etched direction to steer the injection current in 5 μm-width bridge structures. In the FIB-drilled hole structure, high light emission intensity of the central-disk region was observed by enlarging the bridge width to 10 μm, with a 5 μm EC-treated width, that reduced the current steering effect and increased the light scattering effect on the nanoporous structure. The EC-treated GaN:Si nanoporous structure acted as a high light scattering structure and a current steering structure that has potential on the current confinement for vertical cavity surface emitting laser applications. - Highlights: • High resistivity nanoporous-GaN formed in InGaN LED through electrochemical process. • Branch-like nanoporous in 5 μm-width bridge structure can steer the injection current. • Nanoporous GaN acted as s light scattering and current steering structures in InGaN LED.

  17. Devices for medical diagnosis with GaN lasers

    Science.gov (United States)

    Kwasny, Miroslaw; Mierczyk, Zygmunt

    2003-10-01

    This paper presents laser-induced fluroescence method (LIF) employing endogenous ("autofluroescence") and exogenous fluorophores. LIF is applied for clinical diagnosis in dermatology, gynaecology, urology, lung tumors as well as for early dentin caries. We describe the analysers with He-Ne, He-Cd, and SHG Nd:YAG lasers and new generation systems based on blue semiconductor GaN lasers that have been implemented into clinical practice till now. The LIF method, fundamental one for many medical applications, with excitation radiation of wavelength 400 nm could be appl,ied only using tunable dye lasers or titanium lasers adequte for laboratory investigations. Development of GaN laser shows possibility to design portable, compact diagnostic devices as multi-channel analysers of fluorescence spectra and surface imaging devoted to clinical application. The designed systems used for spectra measurement and registration of fluorescence images include lasers of power 5-30 mW and generate wavelengths of 405-407 nm. They are widely used in PDT method for investigation of superficial distribution of accumulation kinetics of all known photosensitizers, their elimination, and degradation as well as for treatment of superficial lesions of mucosa and skin. Excitation of exogenous porphrins in Soret band makes possible to estimate their concentration and a period of healthy skin photosensitivity that occurs after photosensitiser injections. Due to high sensitivity of spectrum analysers, properties of photosensitisers can be investigated in vitro (e.g. their aggregation, purity, chromatographic distributions) when their concentrations are 2-3 times lower in comparison to concentrations investigated with typical spectrofluorescence methods. Dentistry diagnosis is a new field in which GaN laser devices can be applied. After induction with blue light, decreased autofluorescence intensity can be observed when dentin caries occur and strong characteristic bands of endogenous porphyrines

  18. GaN Nanowire Devices: Fabrication and Characterization

    Science.gov (United States)

    Scott, Reum

    The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

  19. Visible fiber lasers excited by GaN laser diodes

    Science.gov (United States)

    Fujimoto, Yasushi; Nakanishi, Jun; Yamada, Tsuyoshi; Ishii, Osamu; Yamazaki, Masaaki

    2013-07-01

    This paper describes and discusses visible fiber lasers that are excited by GaN laser diodes. One of the attractive points of visible light is that the human eye is sensitive to it between 400 and 700 nm, and therefore we can see applications in display technology. Of course, many other applications exist. First, we briefly review previously developed visible lasers in the gas, liquid, and solid-state phases and describe the history of primary solid-state visible laser research by focusing on rare-earth doped fluoride media, including glasses and crystals, to clarify the differences and the merits of primary solid-state visible lasers. We also demonstrate over 1 W operation of a Pr:WPFG fiber laser due to high-power GaN laser diodes and low-loss optical fibers (0.1 dB/m) made by waterproof fluoride glasses. This new optical fiber glass is based on an AlF3 system fluoride glass, and its waterproof property is much better than the well known fluoride glass of ZBLAN. The configuration of primary visible fiber lasers promises highly efficient, cost-effective, and simple laser systems and will realize visible lasers with photon beam quality and quantity, such as high-power CW or tunable laser systems, compact ultraviolet lasers, and low-cost ultra-short pulse laser systems. We believe that primary visible fiber lasers, especially those excited by GaN laser diodes, will be effective tools for creating the next generation of research and light sources.

  20. Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach

    Directory of Open Access Journals (Sweden)

    Ashutosh Kumar

    2013-05-01

    Full Text Available Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN layer which degrades the device performance. Nanostructuring the GaN can reduce this stress leading to reduction in Quantum Confined Stark Effect. Aligned GaN nanorods based nanodevices have potential applications in electronics and optoelectronics. This paper describes the fabrication of GaN nanorods using Ni nanomasking and reactive ion etching. The morphology of GaN nanorods was studied by field emission scanning electron microscopy. The optical properties of GaN nanorods were studied by Cathodoluminescence (CL spectroscopy. CL results revealed the existence of characteristic band-edge luminescence and yellow band luminescence.

  1. MOCVD growth of GaN on Si through novel substrate modification techniques

    Science.gov (United States)

    Gagnon, Jarod C.

    GaN is a semiconductor material with great potential for use in high power electronics and optoelectronics due to the high electron mobility, high breakdown voltage, high thermal stability, and large direct bandgap of GaN. Si is a desirable substrate material for GaN heteroepitaxy due to the low cost of production, large wafer sizes available, and current widespread use in the electronics industry. The growth of GaN/Si devices suffers from the lattice and CTE mismatches between GaN and Si and therefore multiple methods of strain reduction have been employed to counter these effects. In this work we presented two novel methods of substrate modification to promote the growth of device quality GaN on Si. Initial work focused on the implantation of AlN/Si(111) substrates with N+ ions below the AlN/Si(111) interface. A reduction in the initial compressive stress in GaN films as well as the degree of tensile stress generation during growth was observed on implanted samples. Optical microscopy of the GaN surfaces showed reduced channeling crack density on implanted substrates. Transmission electron microscopy (TEM) studies showed a disordered layer in the Si substrate at the implantation depth which consisted of a mixture of polycrystalline and amorphous Si. Evidence was provided to suggest that the disordered layer at the implantation depth was acting as a compliant layer which decoupled the GaN film from the bulk Si substrate and partially accommodated the tensile stress formed during growth and cooling. A reduction in threading dislocation (TD) density on ion implanted substrates was also observed. Additional studies showed that by increasing the lateral size of AlN islands, the tensile growth stress and TD density in GaN films on ion implanted substrates could be further reduced. XRD studies showed an expansion of the AlN lattice on implanted substrates with larger lateral island sizes. The final tensile growth stress of films on implanted substrates was further

  2. Field emission from quantum size GaN structures

    Science.gov (United States)

    Yilmazoglu, O.; Pavlidis, D.; Litvin, Yu. M.; Hubbard, S.; Tiginyanu, I. M.; Mutamba, K.; Hartnagel, H. L.; Litovchenko, V. G.; Evtukh, A.

    2003-12-01

    Whisker structures and quantum dots fabricated by photoelectrochemical (PEC) etching of undoped and doped metalorganic chemical vapor deposition (MOCVD)-grown GaN (2×10 17 or 3×10 18 cm -3) are investigated in relation with their field-emission characteristics. Different surface morphologies, corresponding to different etching time and photocurrent, results in different field-emission characteristics with low turn-on voltage down to 4 V/μm and the appearance of quantum-size effect in the I- V curves.

  3. Field emission from quantum size GaN structures

    Energy Technology Data Exchange (ETDEWEB)

    Yilmazoglu, O.; Pavlidis, D.; Litvin, Yu.M.; Hubbard, S.; Tiginyanu, I.M.; Mutamba, K.; Hartnagel, H.L.; Litovchenko, V.G.; Evtukh, A

    2003-12-30

    Whisker structures and quantum dots fabricated by photoelectrochemical (PEC) etching of undoped and doped metalorganic chemical vapor deposition (MOCVD)-grown GaN (2x10{sup 17} or 3x10{sup 18} cm{sup -3}) are investigated in relation with their field-emission characteristics. Different surface morphologies, corresponding to different etching time and photocurrent, results in different field-emission characteristics with low turn-on voltage down to 4 V/{mu}m and the appearance of quantum-size effect in the I-V curves.

  4. Photoluminescence study on Eu-implanted GaN

    Institute of Scientific and Technical Information of China (English)

    Zhang Chun-Guang; Bian Liu-Fang; Chen Wei-De

    2005-01-01

    The photoluminescence (PL) properties of Eu-implanted GaN thin films are studied. The experimental results show that the PL intensity is seriously affected by ion implantation conditions. The PL efficiency increases exponentially with annealing temperature increasing up to a maximum temperature of 1050℃. Moreover, the PL intensity for the sample implanted along the channelling direction is nearly twice more than that observed from the sample implanted along the random direction. The thermal quenching of PL intensity from 10K to 300K for sample annealed at 1050℃ is only 42.%.

  5. Acceptor and donor impurities in GaN nanocrystals

    OpenAIRE

    Echeverría-Arrondo, C.; Pérez-Conde, J.; Bhattacharjee, A. K.

    2010-01-01

    We investigate acceptor and donor states in GaN nanocrystals doped with a single substitutional impurity. Quantum dots (QD's) of zinc-blende structure and spherical shape are considered with the radius ranging from 4.5 to 67.7 A. The size-dependent energy spectra are calculated within the sp3d5s* tight-binding model, which yields a good agreement with the confinement-induced blue shifts observed in undoped QD's. The computed binding energy is strongly enhanced with respect to the experimental...

  6. Stress related aspects of GaN technology physics

    Science.gov (United States)

    Suhir, Ephraim

    2015-03-01

    Simple, easy-to-use and physically meaningful analytical models have been developed for the assessment of the combined effect of the lattice and thermal mismatch on the induced stresses in an elongated bi-material assembly, as well as on the thermal mismatch on the thermal stresses in a tri-material assembly, in which the lattice mismatched stresses are eliminated in one way or another. This could be done, e.g., by using a polished or an etched substrate. The analysis is carried out in application to Gallium Nitride (GaN)-Silicon Carbide (SiC) and GaN-diamond (C) filmsubstrate assemblies. The calculated data are obtained, assuming that no annealing or other stress reduction means is applied. The data agree reasonably well with the reported (available) in-situ measurements. The most important conclusion from the computed data is that even if a reasonably good lattice match takes place (as, e.g., in the case of a GaN film fabricated on a SiC substrate, when the mismatch strain is only about 3%) and, in addition, the temperature change (from the fabrication/growth temperature to the operation temperature) is significant (as high as 1000 °C), the thermal stresses are still considerably lower than the lattice-mismatch stresses. Although there are structural and technological means for further reduction of the lattice-mismatch stresses (e.g., by high temperature annealing or by providing one or more buffering layers, or by using patterned or porous substrates), there is still a strong incentive to eliminate completely the lattice mismatch stresses. This seems to be indeed possible, if polished or otherwise flattened (e.g., chemically etched) substrates and sputter deposited GaN film is employed. In such a case only thermal stresses remain, but even these could be reduced, if necessary, by using compliant buffering layers, including layers of variable compliance, or by introducing variable compliance into the properly engineered substrate. In any event, it is expected

  7. Pressure-induced phase transition in GaN nanocrystals

    CERN Document Server

    Cui, Q; Zhang, W; Wang, X; Zhang, J; Cui, T; Xie, Y; Liu, J; Zou, G

    2002-01-01

    High-pressure in situ energy-dispersive x-ray diffraction experiments on GaN nanocrystals with 50 nm diameter have been carried out using a synchrotron x-ray source and a diamond-anvil cell up to about 79 GPa at room temperature. A pressure-induced first-order structural phase transition from the wurtzite-type structure to the rock-salt-type structure starts at about 48.8 GPa. The rock-salt-type phase persists to the highest pressure in our experimental range.

  8. Modelling of GaN quantum dot terahertz cascade laser

    Science.gov (United States)

    Asgari, A.; Khorrami, A. A.

    2013-03-01

    In this paper GaN based spherical quantum dot cascade lasers has been modelled, where the generation of the terahertz waves are obtained. The Schrödinger, Poisson, and the laser rate equations have been solved self-consistently including all dominant physical effects such as piezoelectric and spontaneous polarization in nitride-based QDs and the effects of the temperature. The exact value of the energy levels, the wavefunctions, the lifetimes of electron levels, and the lasing frequency are calculated. Also the laser parameters such as the optical gain, the output power and the threshold current density have been calculated at different temperatures and applied electric fields.

  9. Photoluminescence enhancement from GaN by beryllium doping

    Science.gov (United States)

    García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

    2016-10-01

    High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

  10. Simplification of Template-free Method to Prepare Polyaniline Nanotubes

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    1 Introduction Conducting polymer nanostructures (e.g.nanotubes or nanofibers) have received considerable attention owing their unique properties and promising applications in technology and nano-devices[1]. Conducting polymer nanostructures can be generally synthesized through "hard" and "soft" template method.Usually an external hard template in a "hard-template" method is required and the post-treatment of removing template is rather tedious."Soft-template" method is advantageous of omitting external...

  11. Effect of reactor pressure on the growth rate and structural properties of GaN films

    Institute of Scientific and Technical Information of China (English)

    NI JinYu; HAO Yue; ZHANG JinCheng; YANG LinAn

    2009-01-01

    The effect of reactor pressure on the growth rate,surface morphology and crystalline quality of GaN films grown on sapphire by metalorganic chemical vapor deposition is studied.The results show that as the reactor pressure increases from 2500 to 20000 Pa,the GaN surface becomes rough and the growth rate of GaN films decreases.The rough surface morphology is associated with the initial high temperature GaN islands,which are large with low density due to low adatom surface diffusion under high reactor pressure.These islands prolong the occurrence of 2D growth mode and decrease the growth rate of GaN film.Meanwhile,the large GaN islands with low density lead to the reduction of threading dislocation density during subsequent island growth and coalescence,and consequently decrease the full width at half maximum of X-ray rocking curve of the GaN film.

  12. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  13. GaN quantum dot polarity determination by X-ray photoelectron diffraction

    Science.gov (United States)

    Romanyuk, O.; Bartoš, I.; Brault, J.; Mierry, P. De; Paskova, T.; Jiříček, P.

    2016-12-01

    Growth of GaN quantum dots (QDs) on polar and semipolar GaN substrates is a promising technology for efficient nitride-based light emitting diodes (LED). The QDs crystal orientation typically repeats the polarity of the substrate. In case of non-polar or semipolar substrates, the polarity of QDs is not obvious. In this article, the polarity of GaN QDs and of underlying layers was investigated nondestructively by X-ray photoelectron diffraction (XPD). Polar and semipolar GaN/Al0.5Ga0.5N heterostructures were grown on the sapphire substrates with (0001) and (1 1 bar 00) orientations by molecular beam epitaxy (MBE). Polar angle dependence of N 1s core-level photoelectron intensities were measured from GaN QDs and compared with the corresponding experimental curves from free-standing GaN crystals. It is confirmed experimentally, that the crystalline orientation of polar (0001) GaN QDs follows the orientation of the (0001) sapphire substrate. In case of semipolar GaN QDs grown on (1 1 bar 00) sapphire substrate, the (11 2 bar 2) polarity of QDs was determined.

  14. Influence of surface scattering on the thermal properties of spatially confined GaN nanofilm

    Science.gov (United States)

    Hou, Yang; Zhu, Lin-Li

    2016-08-01

    Gallium nitride (GaN), the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation (BTE). The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of GaN nanostructures in nanoelectronic devices through surface engineering. Project supported by the National Natural Science Foundation of China (Grant Nos. 11302189 and 11321202) and the Doctoral Fund of Ministry of Education of China (Grant No. 20130101120175).

  15. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.

    Science.gov (United States)

    Zhong, Aihua; Hane, Kazuhiro

    2012-12-27

    GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining.

  16. One-step graphene coating of heteroepitaxial GaN films.

    Science.gov (United States)

    Choi, Jae-Kyung; Huh, Jae-Hoon; Kim, Sung-Dae; Moon, Daeyoung; Yoon, Duhee; Joo, Kisu; Kwak, Jinsung; Chu, Jae Hwan; Kim, Sung Youb; Park, Kibog; Kim, Young-Woon; Yoon, Euijoon; Cheong, Hyeonsik; Kwon, Soon-Yong

    2012-11-02

    Today, state-of-the-art III-Ns technology has been focused on the growth of c-plane nitrides by metal-organic chemical vapor deposition (MOCVD) using a conventional two-step growth process. Here we show that the use of graphene as a coating layer allows the one-step growth of heteroepitaxial GaN films on sapphire in a MOCVD reactor, simplifying the GaN growth process. It is found that the graphene coating improves the wetting between GaN and sapphire, and, with as little as ~0.6 nm of graphene coating, the overgrown GaN layer on sapphire becomes continuous and flat. With increasing thickness of the graphene coating, the structural and optical properties of one-step grown GaN films gradually transition towards those of GaN films grown by a conventional two-step growth method. The InGaN/GaN multiple quantum well structure grown on a GaN/graphene/sapphire heterosystem shows a high internal quantum efficiency, allowing the use of one-step grown GaN films as 'pseudo-substrates' in optoelectronic devices. The introduction of graphene as a coating layer provides an atomic playground for metal adatoms and simplifies the III-Ns growth process, making it potentially very useful as a means to grow other heteroepitaxial films on arbitrary substrates with lattice and thermal mismatch.

  17. The influence of Fe doping on the surface topography of GaN epitaxial material

    Science.gov (United States)

    Lei, Cui; Haibo, Yin; Lijuan, Jiang; Quan, Wang; Chun, Feng; Hongling, Xiao; Cuimei, Wang; Jiamin, Gong; Bo, Zhang; Baiquan, Li; Xiaoliang, Wang; Zhanguo, Wang

    2015-10-01

    Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 1019 cm-3. High resistivity GaN epitaxial material which is 1 × 109 Ω·cm is achieved. Project supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences (No. YYY-0701-02), the National Natural Science Foundation of China (Nos. 61204017, 61334002), the State Key Development Program for Basic Research of China, and the National Science and Technology Major Project.

  18. Photoelectrochemical water splitting on nanoporous GaN thin films for energy conversion under visible light

    Science.gov (United States)

    Cao, Dezhong; Xiao, Hongdi; Fang, Jiacheng; Liu, Jianqiang; Gao, Qingxue; Liu, Xiangdong; Ma, Jin

    2017-01-01

    Nanoporous (NP) GaN thin films, which were fabricated by an electrochemical etching method at different voltages, were used as photoelectrodes during photoelectrochemical (PEC) water splitting in 1 M oxalic acid solution. Upon illumination at a power density of 100 mW cm‑2 (AM 1.5), water splitting is observed in NP GaN thin films, presumably resulting from the valence band edge which is more positive than the redox potential of the oxidizing species. In comparison with NP GaN film fabricated at 8 V, NP GaN obtained at 18 V shows nearly twofold enhancement in photocurrent with the maximum photo-to-hydrogen conversion efficiency of 1.05% at ~0 V (versus Ag/AgCl). This enhancement could be explained with (i) the increase of surface area and surface states, and (ii) the decrease of resistances and carrier concentration in the NP GaN thin films. High stability of the NP GaN thin films during the PEC water splitting further confirms that the NP GaN thin film could be applied to the design of efficient solar cells and solar fuel devices.

  19. Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application

    Science.gov (United States)

    Chunjiang, Ren; Shichang, Zhong; Yuchao, Li; Zhonghui, Li; Yuechan, Kong; Tangsheng, Chen

    2016-08-01

    Ku-band GaN power transistor with output power over 100 W under the pulsed operation mode is presented. A high temperature A1N nucleation together with an Fe doped GaN buffer was introduced for the developed GaN HEMT. The AlGaN/GaN hetero-structure deposited on 3 inch SiC substrate exhibited a 2DEG hall mobility and density of ˜2100 cm2/(V·s) and 1.0 × 1013 cm-2, respectively, at room temperature. Dual field plates were introduced to the designed 0.25 μm GaN HEMT and the source connected field plate was optimized for minimizing the peak field plate near the drain side of the gate, while maintaining excellent power gain performance for Ku-band application. The load-pull measurement at 14 GHz showed a power density of 5.2 W/mm for the fabricated 400 μm gate periphery GaN HEMT operated at a drain bias of 28 V. A Ku-band internally matched GaN power transistor was developed with two 10.8 mm gate periphery GaN HEMT chips combined. The GaN power transistor exhibited an output power of 102 W at 13.3 GHz and 32 V operating voltage under pulsed operation mode with a pulse width of 100 μs and duty cycle of 10%. The associated power gain and power added efficiency were 9.2 dB and 48%, respectively. To the best of the authors' knowledge, the PAE is the highest for Ku-band GaN power transistor with over 100 W output power.

  20. Conversion of Radiology Reporting Templates to the MRRT Standard.

    Science.gov (United States)

    Kahn, Charles E; Genereaux, Brad; Langlotz, Curtis P

    2015-10-01

    In 2013, the Integrating the Healthcare Enterprise (IHE) Radiology workgroup developed the Management of Radiology Report Templates (MRRT) profile, which defines both the format of radiology reporting templates using an extension of Hypertext Markup Language version 5 (HTML5), and the transportation mechanism to query, retrieve, and store these templates. Of 200 English-language report templates published by the Radiological Society of North America (RSNA), initially encoded as text and in an XML schema language, 168 have been converted successfully into MRRT using a combination of automated processes and manual editing; conversion of the remaining 32 templates is in progress. The automated conversion process applied Extensible Stylesheet Language Transformation (XSLT) scripts, an XML parsing engine, and a Java servlet. The templates were validated for proper HTML5 and MRRT syntax using web-based services. The MRRT templates allow radiologists to share best-practice templates across organizations and have been uploaded to the template library to supersede the prior XML-format templates. By using MRRT transactions and MRRT-format templates, radiologists will be able to directly import and apply templates from the RSNA Report Template Library in their own MRRT-compatible vendor systems. The availability of MRRT-format reporting templates will stimulate adoption of the MRRT standard and is expected to advance the sharing and use of templates to improve the quality of radiology reports.

  1. Research on quantum efficiency of GaN wire photocathode

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Diao, Yu; Kong, Yike

    2017-02-01

    On the basis of three-dimensional continuity equation in semiconductors and finite difference method, the carrier concentration and the quantum efficiency of GaN wire photocathode as a function of incident photon energy are achieved. Results show that the quantum efficiency of the wire photocathode is largely enhanced compared with the conventional planar photocathode. The superiority of the wire photocathode is reflected in its structure with surrounding surfaces. The quantum efficiency of the wire photocathode largely depends on the wire width, surface reflectivity, surface escape probability and incident angle of light. The back interface recombination rate, however, has little influences on the quantum efficiency of the wire photocathode. The simulation results suggest that the optimal width for photoemission is 150-200 nm. Besides, the quantum efficiency increases and decreases linearly with increasing surface escape probability and surface reflectivity, respectively. With increasing ratio of wire spacing to wire height, the optimal incident angle of light is reduced. These simulations are expected to guide the preparation of a better performing GaN wire photocathode.

  2. Radiotracer Spectroscopy on Group II Acceptors in GaN

    CERN Multimedia

    2002-01-01

    The semiconductor GaN is already used for the production of high power light emitting diodes in the blue and UV spectral range. But the $\\rho$-type doping, which is usually obtained by Mg doping, is still inefficient due to compensation and passivation effects caused by defects present in the material. It is theoretically predicted, that Be is a more promising candidate for $\\rho$-doping with a lower ionization energy of 60meV. It is our goal to investigate the electrical and optical properties of Be- and Mg-related defects in GaN to clarify the problem of compensation and passivation. The used methods are standard spectroscopic methods in semiconductor physics which are improved by using radioactive isotopes. The radioactive decay of $^{7}$Be and $^{28}$Mg is used to clearly correlate different signals with Be or Mg related defects. We intend to use the spectroscopic techniques Deep Level Transient Spectroscopy (DLTS), Thermal Admittance Spectroscopy (TAS), photoluminescence (PL) and additionally Hall-effect...

  3. A GaN photonic crystal membrane laser.

    Science.gov (United States)

    Lin, Cheng-Hung; Wang, Jyh-Yang; Chen, Cheng-Yen; Shen, Kun-Ching; Yeh, Dong-Ming; Kiang, Yean-Woei; Yang, C C

    2011-01-14

    The implementation of a series of optically pumped GaN photonic crystal (PhC) membrane lasers is demonstrated at room temperature. The photonic crystal is composed of a scalene-triangular arrangement of circular holes in GaN. Three defect structures are fabricated for comparing their lasing characteristics with those of perfect PhC. It is observed that all the lasing defect modes have lasing wavelengths very close to the band-edge modes in the perfect PhC structure. Although those lasing modes, including band-edge and defect modes, have different optical pump thresholds, different lasing spectral widths, different quality factors (Q factors), and different polarization ratios, all their polarization distributions show maxima in the directions around one of the hole arrangement axes. The similar lasing characteristics between the band-edge and defect modes are attributed to the existence of extremely narrow partial band gaps for forming the defect modes. Also, the oriented polarization properties are due to the scalene-triangle PhC structure. In one of the defect lasing modes, the lasing threshold is as low as 0.82 mJ cm(-2), the cavity Q factor is as large as 1743, and the polarization ratio is as large as 25.4. Such output parameters represent generally superior lasing behaviors when compared with previously reported implementations of similar laser structures.

  4. Gas source molecular beam epitaxial growth of GaN

    Science.gov (United States)

    Brown, Duncan W.

    1992-11-01

    Aluminum gallium nitride (AlGaN) has long been recognized as a promising radiation hard optoelectronic material. AlGaN has a wide direct band gap and therefore has potential applications in the fabrication of short wave-length devices, e.g., detectors and light-emitting diodes in the visible to ultraviolet region. Additionally, its piezoelectric properties and high acoustic velocities make it attractive for acoustic devices. The technical objective in Phase 1 was to determine if low temperature sources based on covalently bonded Group 3-nitrogen compounds could be used to prepare AlGaN films by gas source molecular beam epitaxy. The program required to investigate low temperature AlGaN source materials was separated into two parts: (1) the synthesis, purification, and pyrolysis of gallium-nitrogen adducts and aluminum-nitrogen adducts; and (2) the growth of GaN by chemical beam epitaxy. We clearly demonstrated under CBE conditions GaN(x)C(y) films could be grown using compounds with pre-existing Ga-N bonds whereas no films were formed using trimethylgallium. Dimethylgallium amide was shown to produce dramatically lower carbon content films in the presence of ammonia than did trimethylgallium in the presence of ammonia.

  5. High Quality, Low Cost Ammonothermal Bulk GaN Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ehrentraut, D; Pakalapati, RT; Kamber, DS; Jiang, WK; Pocius, DW; Downey, BC; McLaurin, M; D' Evelyn, MP

    2013-12-18

    Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5-3 mm. The highest growth rates are greater than 40 mu m/h and rates in the 10-30 mu m/h range are routinely observed for all orientations. These values are 5-100x larger than those achieved by conventional ammonothermal GaN growth. The crystals have been characterized by X-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is similar to or better than that of the seed crystals, with FWHM values of about 20-100 arcsec and dislocation densities of 1 x 10(5)-5 x 10(6) cm(-2). Dislocation densities below 10(4) cm(-2) are observed in laterally-grown crystals. Epitaxial InGaN quantum well structures have been successfully grown on ammonothermal wafers. (C) 2013 The Japan Society of Applied Physics

  6. X-ray detection with GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, Markus; Schmid, Martin; Thalhammer, Stefan [Helmholtz Zentrum Muenchen, Institute for Radiation Protection, Ingolstaedter Landstrasse 1, D-85764 Neuherberg (Germany); Howgate, John; Stutzmann, Martin [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany)

    2013-07-01

    In recent years precise miniature-dosimeters for real-time detection of X-rays in medicine have been developed with two aspects to monitor radiation in the region of interest and to improve therapeutic methods. Sensors include Germanium or Silicon photoconductive detectors, MOSFETs, and PIN-diodes. While miniaturization of these systems for spatial resolved detection is possible, they suffer from disadvantages. Sensor properties like material degradation, poor measurement stability and a limited detection range circumvent routine clinical applications. Here we show the development and evaluation of radiation detectors based on gallium nitride (GaN) thin films. While previous publications revealed relative low energy absorption of GaN, it is possible to achieve very high signal amplification factors inside the material due to an appropriate sensor configuration, which, in turn, compensates the low energy absorption. Our devices, which have detection volumes smaller than 10{sup (}-6) cm{sup 3}, show a high sensitivity to X-ray intensity and can record the air kerma rate (free-in-air) range of 1 microgray/s to 10 mGy/s with a signal stability of 1% and a linear total dose response over time. The presented results show the potential of GaN-based thin films for dosimetry and imaging applications.

  7. High Frequency Performance of GaN Based IMPATT Diodes

    Directory of Open Access Journals (Sweden)

    B. Chakrabarti

    2011-08-01

    Full Text Available IMPATT is a p+n junction diode reversed bias to breakdown and can generate microwave power when properly embedded in a resonant cavity. Till emergence on 1965 day by day it became more powerful solid state source for microwave as well as mm-wave frequency range. To get higher efficiency and power output different structures like SDR, DDR, DAR, lo-high-lo, etc. were proposed and developed by different scientists over the years. Then the IMPATT development started with different semiconductor materials like GaAs, InP, GaN, etc. along with Silicon to achieve higher efficiency, power output and frequency range. In this paper the performance of GaN based SDR IMPATT have thoroughly studied in terms of (i electric field profile[E(x] (iinormalized current density profile [P(x] (iii Susceptance Vs Conductance characteristics (ivRF power output (v negative resistivity profile [R(x] of the diodes through simulation scheme. It is being observed that the efficiency is 17.9% at Ka-band and because of the very high breakdown voltage, power output is as high as1.56W in comparison with other frequency band of operations.

  8. Magneto-ballistic transport in GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Santoruvo, Giovanni, E-mail: giovanni.santoruvo@epfl.ch; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison, E-mail: elison.matioli@epfl.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), CH 1015 Lausanne (Switzerland)

    2016-09-05

    The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

  9. Synthesis of RNA oligomers on heterogeneous templates

    Science.gov (United States)

    Ertem, G.; Ferris, J. P.

    1996-01-01

    The concept of an RNA world in the chemical origin of life is appealing, as nucleic acids are capable of both information storage and acting as templates that catalyse the synthesis of complementary molecules. Template-directed synthesis has been demonstrated for homogeneous oligonucleotides that, like natural nucleic acids, have 3',5' linkages between the nucleotide monomers. But it seems likely that prebiotic routes to RNA-like molecules would have produced heterogeneous molecules with various kinds of phosphodiester linkages and both linear and cyclic nucleotide chains. Here we show that such heterogeneity need be no obstacle to the templating of complementary molecules. Specifically, we show that heterogeneous oligocytidylates, formed by the montmorillonite clay-catalysed condensation of actuated monomers, can serve as templates for the synthesis of oligoguanylates. Furthermore, we show that oligocytidylates that are exclusively 2',5'-linked can also direct synthesis of oligoguanylates. Such heterogeneous templating reactions could have increased the diversity of the pool of protonucleic acids from which life ultimately emerged.

  10. Automated Template Quantification for DNA Sequencing Facilities

    Science.gov (United States)

    Ivanetich, Kathryn M.; Yan, Wilson; Wunderlich, Kathleen M.; Weston, Jennifer; Walkup, Ward G.; Simeon, Christian

    2005-01-01

    The quantification of plasmid DNA by the PicoGreen dye binding assay has been automated, and the effect of quantification of user-submitted templates on DNA sequence quality in a core laboratory has been assessed. The protocol pipets, mixes and reads standards, blanks and up to 88 unknowns, generates a standard curve, and calculates template concentrations. For pUC19 replicates at five concentrations, coefficients of variance were 0.1, and percent errors were from 1% to 7% (n = 198). Standard curves with pUC19 DNA were nonlinear over the 1 to 1733 ng/μL concentration range required to assay the majority (98.7%) of user-submitted templates. Over 35,000 templates have been quantified using the protocol. For 1350 user-submitted plasmids, 87% deviated by ≥ 20% from the requested concentration (500 ng/μL). Based on data from 418 sequencing reactions, quantification of user-submitted templates was shown to significantly improve DNA sequence quality. The protocol is applicable to all types of double-stranded DNA, is unaffected by primer (1 pmol/μL), and is user modifiable. The protocol takes 30 min, saves 1 h of technical time, and costs approximately $0.20 per unknown. PMID:16461949

  11. Design and maskless fabrication of ultrathin suspended membranes of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Tiginyanu, I.M. [Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau (Moldova); National Center for Materials Study and Testing, Technical University of Moldova, Chisinau (Moldova); Popa, V. [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau (Moldova); Stevens-Kalceff, M.A. [School of Physics, University of New South Wales, Sydney, NSW (Australia); Gerthsen, D.; Brenner, P. [Laboratory for Electron Microscopy, University of Karlsruhe (Germany); Pavlidis, D. [Institute of Electronics, Microelectronics and Nanotechnology, Cite Scientifique, Villeneuve d' Ascq Cedex (France)

    2012-04-15

    We report the maskless fabrication of ultrathin suspended GaN membranes designed by focused ion beam treatment of the GaN epilayer surface with subsequent photoelectrochemical etching. This technological approach allows the fabrication of ultrathin membranes, as well as supporting micro/nanocolumns in a controlled fashion. The analysis of the spatial and spectral distribution of microcathodoluminescence demonstrates that the membranes exhibit mainly yellow luminescence. These results pave the way for the fabrication of ultrathin suspended GaN membranes for MEMS/NEMS applications. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Stress and Defect Control in GaN Using Low Temperature Interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Akasaki, I.; Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Iwaya, M.; Kashima, T.; Katsuragcawa, M.

    1998-12-04

    In organometallic vapor phase epitaxial growth of Gail on sapphire, the role of the low- temperature-deposited interlayers inserted between high-temperature-grown GaN layers was investigated by in situ stress measurement, X-ray diffraction, and transmission electron microscopy. Insertion of a series of low temperature GaN interlayers reduces the density of threading dislocations while simultaneously increasing the tensile stress during growth, ultimately resulting in cracking of the GaN film. Low temperature AIN interlayers were found to be effective in suppressing cracking by reducing tensile stress. The intedayer approach permits tailoring of the film stress to optimize film structure and properties.

  13. Synthesis and Photoluminescence of GaN Nanowires with Nb Catalyst

    Institute of Scientific and Technical Information of China (English)

    ZHUANG Hui-zhao; LI Bao-li; XUE Cheng-shan; ZHANG Shi-ying; WANG De-xiao; SHEN Jia-bing

    2008-01-01

    Large-scale GaN nanowires are successfully synthesized by ammoniating Ga2O3 films on Nb layer deposited on Si(111) substrates at 850 ℃. X-ray diffraction(XRD), scanning electron microscopy(SEM), field-emssion transmission electron microscope(FETEM), Fourier transformed infrared spectrum(FTIR) are used to characterize the structural and morphological properties of the as-synthesized GaN nanowires. The results reveal that the nanowires are pure hexagonal GaN wurtzite structure with a length of about several microns and a diameter between 50 nm and 100 nm. Finally, discussed briefly is the formation mechanism of gallium nitride nanowires.

  14. Characterization of plasma etching damage on p -type GaN using Schottky diodes

    OpenAIRE

    2008-01-01

    The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was ...

  15. Etching of GaN layers at electrolysis under UV-irradiation

    Science.gov (United States)

    Zubenko, T. K.; Puzyk, M. V.; Stozharov, V. M.; Ermakov, I. A.; Kovalev, D. S.; Ivanova, S. A.; Usikov, A. S.; Medvedev, O. S.; Papchenko, B. P.; Kurin, S. Yu; Antipov, A. A.; Chernyakov, A. E.

    2016-08-01

    Etching of the GaN layers in 1M KOH aqua solution under irradiation was studied by the electro-stimulated photolysis using N2-laser (337 nm, 60 W/m2) as a light source. It was observed that the size and the depth of the failure monotonically depend on the optical power and the irradiation time of the N2 laser and the GaN layer type of conductivity. The GaN layers etching rate was evaluated. A mechanism of the failure in the n-GaN layers is discussed.

  16. Role of Stress Voltage on Structural Degradation of GaN High-Electron-Mobility Transistors

    Science.gov (United States)

    2010-01-01

    GaN high-electron-mobility transistors ( HEMTs ) under high- voltage electrical stress degradation in the drain and gate current is electric field... GaN HEMTs after long-term DC and RF life tests at high voltage [12–16]. Crystallographic defects such as pits and cracks have been observed at the...created by high-voltage stress in GaN HEMTs . A complementary study of the evolution of these de- fects in the cross section as a function of stress

  17. An Octave Bandwidth, High PAE, Linear, Class J GaN High Power Amplifier

    Science.gov (United States)

    2012-03-12

    versus the modeled small-signal gain and return loss response of the Class J amplifier using a 45-W CREE GaN HEMT . The amplifier has a gain of 13 to...AFFTC-PA-12055 An Octave Bandwidth, High PAE, Linear, Class J GaN High Power Amplifier Kris Skowronski, Steve Nelson, Rajesh Mongia, Howard...Technical Paper 3. DATES COVERED (From - To) 11/11 – 03/12 (etc.) 4. TITLE AND SUBTITLE An Octave Bandwidth, High PAE, Linear, Class J GaN High

  18. P-Type Doping of GaN by Mg+ Implantation

    Institute of Scientific and Technical Information of China (English)

    YAO Shu-De; ZHAO Qiang; ZHOU Sheng-Qiang; YANG Zi-Jian; LU Yi-Hong; SUN Chang-Chun; SUN Chang; ZHANG Guo-Yi; VANTOMME Andre; PIPELEERS Bert

    2003-01-01

    Mg+ and Mg++P+ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channelling spectrometry before (xmin = 1.6%) and after implantation (Xmin = 4.1%). X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.

  19. Growth of Semi-Insulating GaN by Using Two-Step A1N Buffer Layer

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhong-Tang; QUO Li-Wei; XING Zhi-Gang; DING Guo-Jian; ZHANG Jie; PENG Ming-Zeng; JIA Hai-Qiang; CHEN Hong; ZHOU Jun-Ming

    2007-01-01

    Semi-insulating GaN is grown by using a two-step A1N buffer layer by metalorganic chemical vapour deposition. The sheet resistance of as-grown semi-insulating GaN is dramatically increased to 1013 Ω/sq by using two-step A1N buffer instead of the traditional low-temperature GaN buffer. The high sheet resistance of as-grown GaN over 10 Ωfi/sq is due to inserting an insulating buffer layer (two-step A1N buffer) between the high-temperature GaN layer and a sapphire substrate which blocks diffusion of oxygen and overcomes the weakness of generating high density carrier near interface of GaN and sapphire when a low-temperature GaN buffer is used. The result suggests that the high conductive feature of unintentionally doped GaN is mainly contributed from the highly conductive channel near interface between GaN and the sapphire substrate, which is indirectly manifested by room-temperature photoluminescence excited by an incident laser beam radiating on growth surface and on the substrate. The functions of the two-step A1N buffer layer in reducing screw dislocation and improving crystal quality of GaN are also discussed.

  20. Polymer templated nickel cobaltate for energy storage★

    Directory of Open Access Journals (Sweden)

    Albohani Shaymaa

    2017-01-01

    Full Text Available In order to take advantage of the increasing sophistication of technology for harnessing renewable energy resources, serious attention must be paid to how to store and re-access this energy. Electrochemical storage, in the guise of batteries, supercapacitors and pseudocapacitors, has attracted much attention as a viable option for enhanced energy storage applications. But in order for these technologies to be implemented successfully we need to find materials that perform better and are relatively easy to synthesise. Bimetallic transition metal oxides are materials that are readily synthesised and may be multifunctional, i.e. have a role at the electrochemical atomic level as well as the device level. In order for these materials to work efficiently in new generation systems based on sodium and lithium they also need to be mesoporous. This can be achieved by trying to find synthetic techniques that produce specific, highly regulated nanostructures or by adding a ‘templating’ agent during the bulk synthesis step. We have investigated the simple hydrothermal preparation of a number of nickel cobaltate (NiCo2O4 materials using polymer templates, eggshell membrane (ESM and poly methyl methacrylate (PMMA, as potential electrode materials for supercapacitors. The ESM was expected to act as a fibrous, random polymeric template while the PMMA should produce a much more ordered material. Electrochemical testing showed that the different templates have led to changes in material morphology and these have resulted in a difference in electrochemical properties. Templated materials increased specific capacitance compared to non-templated and the choice of template could influence the capacitance by as much as 30%.

  1. Microwave assisted template synthesis of silver nanoparticles

    Indian Academy of Sciences (India)

    K J Sreeram; M Nidhin; B U Nair

    2008-12-01

    Easier, less time consuming, green processes, which yield silver nanoparticles of uniform size, shape and morphology are of interest. Various methods for synthesis, such as conventional temperature assisted process, controlled reaction at elevated temperatures, and microwave assisted process have been evaluated for the kind of silver nanoparticles synthesized. Starch has been employed as a template and reducing agent. Electron microscopy, photon correlation spectroscopy and surface plasmon resonance have been employed to characterize the silver nanoparticles synthesized. Compared to conventional methods, microwave assisted synthesis was faster and provided particles with an average particle size of 12 nm. Further, the starch functions as template, preventing the aggregation of silver nanoparticles.

  2. Templates for Deposition of Microscopic Pointed Structures

    Science.gov (United States)

    Pugel, Diane E.

    2008-01-01

    Templates for fabricating sharply pointed microscopic peaks arranged in nearly regular planar arrays can be fabricated by a relatively inexpensive technique that has recently been demonstrated. Depending on the intended application, a semiconducting, insulating, or metallic film could be deposited on such a template by sputtering, thermal evaporation, pulsed laser deposition, or any other suitable conventional deposition technique. Pointed structures fabricated by use of these techniques may prove useful as photocathodes or field emitters in plasma television screens. Selected peaks could be removed from such structures and used individually as scanning tips in atomic force microscopy or mechanical surface profiling.

  3. Preparation of porous lanthanum phosphate with templates

    Energy Technology Data Exchange (ETDEWEB)

    Onoda, Hiroaki, E-mail: onoda@kpu.ac.jp [Department of Informatics and Environmental Sciences, Faculty of Life and Environmental Sciences, Kyoto Prefectural University, 1-5, Shimogamo Nakaragi-cyo, Sakyo-ku, Kyoto 606-8522 (Japan); Ishima, Yuya [Department of Applied Chemistry, Faculty of Life Sciences, Ritsumeikan University, 1-1-1, Nojihigashi, Kusatsu, Shiga 525-8577 (Japan); Takenaka, Atsushi [Department of Materials Science, Yonago National College of Technology, 4448, Hikona-cho, Yonago, Tottori 683-8502 (Japan); Tanaka, Isao [Department of Materials Science and Engineering, Faculty of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)

    2009-08-05

    Malonic acid, propionic acid, glycine, n-butylamine, and urea were added to the preparation of lanthanum phosphate from lanthanum nitrate and phosphoric acid solutions. All additives were taken into lanthanum phosphate particles. The additives that have a basic site were easy to contain in precipitates. The addition of templates improved the specific surface area of lanthanum phosphate. The amount of pore, with radius smaller than 4 nm, increased with the addition of templates. The remained additives had influence on the acidic properties of lanthanum phosphate.

  4. Vertex finding with deformable templates at LHC

    Energy Technology Data Exchange (ETDEWEB)

    Stepanov, N. [European Organization for Nuclear Research, Geneva (Switzerland); Khanov, A. [European Organization for Nuclear Research, Geneva (Switzerland)

    1997-04-11

    We present a novel vertex finding technique. The task is formulated as a discrete-continuous optimisation problem in a way similar to the deformable templates approach for the track finding. Unlike the track finding problem, ``elastic hedgehogs`` rather than elastic arms are used as deformable templates. They are initialised by a set of procedures which provide zero level approximation for vertex positions and track parameters at the vertex point. The algorithm was evaluated using the simulated events for the LHC CMS detector and demonstrated good performance. (orig.).

  5. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

    Science.gov (United States)

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-09-02

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

  6. Transparent, Flexible Piezoelectric Nanogenerator Based on GaN Membrane Using Electrochemical Lift-Off.

    Science.gov (United States)

    Kang, Jin-Ho; Jeong, Dae Kyung; Ryu, Sang-Wan

    2017-03-29

    A transparent and flexible piezoelectric nanogenerator (TF PNG) is demonstrated based on a GaN membrane fabricated by electrochemical lift-off. Under shear stress on the TF PNG by finger force (∼182 mN), the GaN membrane effectively undergoes normal stress and generates piezoelectric polarization along the c-axis, resulting in the generation of piezoelectric output from the TF PNG. Although the GaN layer is 315 times thinner than the flexible polyethylene terephthalate (PET) substrate, the low Young's modulus of PET allows the GaN membranes to absorb ∼41% of the applied strain energy, which leads to their large lattice deformation under extremely low applied stress. Maximum output voltage and current values of 4.2 V and 150 nA are obtained, and the time decay of the output voltage is discussed.

  7. Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals

    Science.gov (United States)

    Gao, B.; Kakimoto, K.

    2015-01-01

    To dynamically model the grown-in dislocation multiplication on prismatic slip planes for GaN single crystal growth, the Alexander-Haasen (AH) model, which was originally used to model the plastic deformation of silicon crystals, is extended to GaN single crystals. By fitting the model to the experimental data, we found that it can accurately describe the plastic deformation of GaN caused by prismatic slip. A set of unified parameters for the AH model at different temperatures can be found. This model provides a possible method to minimize grown-in dislocations caused due to prismatic slip by optimizing growing and cooling conditions during GaN single crystal growth.

  8. Role of lateral growth on the structural properties of high temperature GaN layer

    Institute of Scientific and Technical Information of China (English)

    GAO ZhiYuan; HAO Yue; LI PeiXian; ZHANG JinCheng

    2009-01-01

    The role of lateral growth on the structural properties of high temperature (HT) GaN epitaxial layer has been investigated by means of transmission electron microscopy (TEM) and X-ray diffraction (XRD).Variations of the lateral growth rate of HT GaN in metal-organic chemical vapor deposition (MOCVD)can be obtained by changing the Ⅴ/Ⅲ ratio. It is found that under higher lateral growth rate, dislocation is easier to bend into subgrains away from c axis, and the position where bend occurs is closer to the buffer layer, however, dislocation density does not show to monotonically vary with increasing lateral growth rate. A model concerning the GaN growth dynamics and dislocation bending mechanics has been proposed to explain the correlation between lateral growth and the structural properties of GaN.

  9. Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

    Science.gov (United States)

    Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji; Nishikawa, Koichi; Kachi, Tetsu

    2016-03-01

    GaN substrate produced by the basic ammonothermal method and an epitaxial layer on the substrate was evaluated using synchrotron radiation x-ray topography and transmission electron microscopy. We revealed that the threading dislocations present in the GaN substrate are deformed into helical dislocations and the generation of the voids by heat treatment in the substrate for the first observation in the GaN crystal. These phenomena are formed by the interactions between the dislocations and vacancies. The helical dislocation was formed in the substrate region, and not in the epitaxial layer region. Furthermore, the evaluation of the influence of the dislocations on the leakage current of Schottky barrier diodes fabricated on the epitaxial layer is discussed. The dislocations did not affect the leakage current characteristics of the epitaxial layer. Our results suggest that the deformation of dislocations in the GaN substrate does not adversely affect the epitaxial layer.

  10. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States); Bader, Samuel [Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  11. Theoretical study of Ni adsorption on the GaN(0 0 0 1) surface

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Hernandez, Rafael, E-mail: rhernandezj@uninorte.edu.co [Grupo de Fisica de la Materia Condensada - GFMC, Departamento de Fisica, Universidad del Norte, Barranquilla (Colombia); GEMA - Grupo de Estudio de Materiales, Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia); Lopez, William [Grupo de Fisica de la Materia Condensada - GFMC, Departamento de Fisica, Universidad del Norte, Barranquilla (Colombia); Ortega, Cesar [Grupo Avanzado de Materiales y Sistemas Complejos - GAMASCO, Universidad de Cordoba, Monteria (Colombia); Moreno-Armenta, Maria Guadalupe [Centro de Nanociencias y Nanotecnologia de la UNAM, Ensenada, Baja California (Mexico); Arbey Rodriguez, Jairo [GEMA - Grupo de Estudio de Materiales, Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia)

    2010-09-01

    First-principles pseudo-potential calculations within density-functional theory framework are performed in order to study the structural and electronic properties of nickel adsorption and diffusion on a GaN(0 0 0 1)-2x2 surface. The adsorption energies and potential energy surfaces are investigated for a Ni adatom on the Ga-terminated (0 0 0 1) surface of GaN. This surface is also used to study the effect of the nickel surface coverage. The results show that the most stable positions of a Ni adatom on GaN(0 0 0 1) are at the H{sub 3} sites and T{sub 4} sites, for low and high Ni coverage respectively. In addition, confirming previous experimental results, we have found that the growth of Ni monolayers on the GaN(0 0 0 1) surface is possible.

  12. Efficient light extraction from GaN LEDs using gold-coated ZnO nanoparticles

    KAUST Repository

    Alhadidi, A.

    2015-11-01

    We experimentally demonstrate the effect of depositing gold-coated ZnO nanoparticles on the surface of GaN multi-quantum well LED structures. We show that this method can significantly increase the amount of extracted light.

  13. Room-temperature ferromagnetism in V-doped GaN thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Souissi, M.; El Jani, B. [Unite de Recherche sur les Hetero-Epitaxies et Applications, Faculte des Sciences de Monastir, 5000 Monastir (Tunisia); Schmerber, G.; Derory, A. [Institut de Physique et Chimie des Materiaux de Strasbourg (IPCMS), UMR7504 CNRS-UDS, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France)

    2010-09-15

    V-doped GaN thin films were grown on c-sapphire substrate by metal organic chemical vapour deposition method (MOCVD). We have used vanadium tetrachloride (VCl{sub 4}) to intentionally incorporate vanadium (V) during the crystal growth of GaN. X-ray diffraction measurements revealed no secondary phase in the samples. Magnetic experiments using superconducting quantum interference device (SQUID) showed clear hysteresis loop in magnetization versus applied field (M -H) curves for V-doped GaN films. The ferromagnetic behavior was evidenced at 300 K, implying the Curie temperature to be over 300 K. Strong and broad blue-luminescent band (centered at 2.6 eV) is induced by the V doping in GaN. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Preparation and characterization of GaN films grown on Ga-diffused Si(111) substrates

    Institute of Scientific and Technical Information of China (English)

    SUN Zhencui; CAO Wentian; WEI Qinqin; WANG Shuyun; XUE Chengshan; SUN Haibo

    2005-01-01

    Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15min and nitrided at the temperature of 900℃ for 10, 15, and 20 min, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.

  15. FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip....

  16. Spectroscopic investigation of native defect induced electron-phonon coupling in GaN nanowires

    Science.gov (United States)

    Parida, Santanu; Patsha, Avinash; Bera, Santanu; Dhara, Sandip

    2017-07-01

    The integration of advanced optoelectronic properties in nanoscale devices of group III nitride can be realized by understanding the coupling of charge carriers with optical excitations in these nanostructures. The native defect induced electron-phonon coupling in GaN nanowires are reported using various spectroscopic studies. The GaN nanowires having different native defects are grown in an atmospheric pressure chemical vapor deposition technique. X-ray photoelectron spectroscopic analysis revealed the variation of Ga/N ratios in nanowires having possible native defects, with respect to their growth parameters. The analysis of the characteristic features of electron-phonon coupling in the Raman spectra show the variations in carrier density and mobility, with respect to the native defects in unintentionally doped GaN nanowires. The radiative recombination of donor acceptor pair transitions and the corresponding LO phonon replicas observed in photoluminescence studies further emphasize the role of native defects in electron-phonon coupling.

  17. Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

  18. In situ studies of the effect of silicon on GaN growth modes.

    Energy Technology Data Exchange (ETDEWEB)

    Munkholm, A.; Stephenson, G. B.; Eastman, J. A.; Auciello, O.; Murty, M. V. R.; Thompson, C.; Fini, P.; Speck, J. S.; DenBaars, S. P.; Northern Illinois Univ.; Univ. of California at Santa Barbara

    2000-12-01

    We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change the mode of subsequent growth from step-flow to layer-by-layer. By comparing the growth behavior induced by doped layers which have been annealed to that induced by surface dosing, we extract an approximate diffusion coefficient for Si in GaN of 3.5 x 10{sup -18} cm{sup 2}/s at 810{sup o}C.

  19. Role of lateral growth on the structural properties of high temperature GaN layer

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The role of lateral growth on the structural properties of high temperature(HT) GaN epitaxial layer has been investigated by means of transmission electron microscopy(TEM) and X-ray diffraction(XRD).Variations of the lateral growth rate of HT GaN in metal-organic chemical vapor deposition(MOCVD) can be obtained by changing the V/Ⅲ ratio.It is found that under higher lateral growth rate,dislocation is easier to bend into subgrains away from c axis,and the position where bend occurs is closer to the buffer layer,however,dislocation density does not show to monotonically vary with increasing lateral growth rate.A model concerning the GaN growth dynamics and dislocation bending mechanics has been proposed to explain the correlation between lateral growth and the structural properties of GaN.

  20. Effects of Al additives on growth of GaN polycrystals by the Na flux method

    Science.gov (United States)

    Imabayashi, Hiroki; Murakami, Kosuke; Matsuo, Daisuke; Honjo, Masatomo; Imanishi, Masayuki; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke

    2017-03-01

    In this study, we investigated the growth of GaN polycrystals using the Al-added Na flux method. We studied the effects of Al on accelerating the nucleation and purity of GaN polycrystals. The yields of GaN crystals grown in Al-added Na flux were dramatically increased from those in Al-free Na flux, and the polycrystals grown by the Al-added Na flux method were highly transparent. As observed in secondary ion mass spectroscopy measurements, the Al content of the polycrystals was below the detection limit of 3 × 1016 atoms/cm3. From these results, the Al-added Na flux method is found to be appropriate for fabricating a large amount of GaN polycrystals without deteriorating the crystal quality.

  1. N-polar GaN epitaxy and high electron mobility transistors

    Science.gov (United States)

    Hoi Wong, Man; Keller, Stacia; Nidhi; Dasgupta, Sansaptak; Denninghoff, Daniel J.; Kolluri, Seshadri; Brown, David F.; Lu, Jing; Fichtenbaum, Nicholas A.; Ahmadi, Elaheh; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

    2013-07-01

    This paper reviews the progress of N-polar (000\\mathop 1\\limits^\\_) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized.

  2. Ivestigation of an InGaN - GaN nanowire heterstructure

    Energy Technology Data Exchange (ETDEWEB)

    Limbach, Friederich; Gotschke, Tobias; Stoica, Toma; Calarco, Raffaella; Gruetzmacher, Detlev [Institute of Bio- and Nanosystems (IBN-1), Research Center Juelich GmbH, Juelich (Germany); JARA-Fundamentals of Future Information Technology, Juelich (Germany); Sutter, Eli; Ciston, Jim [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY (United States); Cusco, Ramon; Artus, Luis [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Barcelona, Catalonia (Spain); Kremling, Stefan; Hoefling, Sven; Worschech, Lukas [University Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wuerzburg (Germany)

    2011-07-01

    InGaN/GaN nanowire (NW) heterostructures grown by molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multi-faceted InGaN cap wrapping the top part of the GaN NW. Transmission electron microscopy images taken from different parts of a InGaN/GaN nanowire show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it. Photoluminescence spectra of these heterostructure NW ensembles show an emission peak at 2.1 eV. However, {mu}-PL spectra measured on single nanowires reveal much sharper luminescence peaks. A Raman analysis reveals a variation of the In content between 20 % and 30 %, in agreement with PL and TEM investigations.

  3. Development of Epitaxial GaN Films for RF Communications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The primary objective of this SBIR is to develop epitaxial GaN films with threading dislocation density less than 10^6 cm^-2. We propose an innovative approach...

  4. GaN nano-membrane for optoelectronic and electronic device applications

    KAUST Repository

    Ooi, Boon S.

    2014-01-01

    The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

  5. Droplet heteroepitaxy of zinc-blende vs. wurtzite GaN quantum dots

    Science.gov (United States)

    Reese, C.; Jeon, S.; Hill, T.; Jones, C.; Shusterman, S.; Yacoby, Y.; Clarke, R.; Deng, H.; Goldman, Rs

    We have developed a GaN droplet heteroepitaxy process based upon plasma-assisted molecular-beam epitaxy. Using various surface treatments and Ga deposition parameters, we have demonstrated polycrystalline, zinc-blende (ZB), and wurtzite (WZ) GaN quantum dots (QDs) on Si(001), r-Al2O3, Si(111), and c-GaN substrates. For the polar substrates (i.e. Si(111) and c-GaN), high-resolution transmission electron microscopy and coherent Bragg rod analysis reveals the formation of coherent WZ GaN QDs with nitridation-temperature-dependent sizes and densities. For the non-polar substrates (i.e. Si(001) and r-Al2O3) , QDs with strong near-band photoluminescence emission are observed and ZB GaN QD growth on Si(001) is demonstrated for the first time.

  6. Surface chemistry and electronic structure of nonpolar and polar GaN films

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna, T.C. Shibin; Aggarwal, Neha; Gupta, Govind, E-mail: govind@nplindia.org

    2015-08-01

    Highlights: • Surface chemistry and electronic structure of polar and nonpolar GaN is reported. • Influence of polarization on electron affinity of p & np GaN films is investigated. • Correlation between surface morphology and polarity has been deduced. - Abstract: Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is reported. The effect of polarization on surface properties like surface states, electronic structure, chemical bonding and morphology has been investigated and correlated. It was observed that polarization lead to shifts in core level (CL) as well as valence band (VB) spectra. Angle dependent X-ray Photoelectron Spectroscopic analysis revealed higher surface oxide in polar GaN film compared to nonpolar GaN film. On varying the take off angle (TOA) from 0° to 60°, the Ga−O/Ga−N ratio varied from 0.11–0.23 for nonpolar and 0.17–0.36 for polar GaN film. The nonpolar film exhibited N-face polarity while Ga-face polarity was perceived in polar GaN film due to the inherent polarization effect. Polarization charge compensated surface states were observed on the polar GaN film and resulted in downward band bending. Ultraviolet photoelectron spectroscopic measurements revealed electron affinity and ionization energy of 3.4 ± 0.1 eV and 6.8 ± 0.1 eV for nonpolar GaN film and 3.8 ± 0.1 eV and 7.2 ± 0.1 eV for polar GaN film respectively. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with pits on polar GaN film. The nonpolar film on the other hand showed pyramidal structures having facets all over the surface.

  7. The biogeochemical cycle of the adsorbed template. II - Selective adsorption of mononucleotides on adsorbed polynucleotide templates

    Science.gov (United States)

    Lazard, Daniel; Lahav, Noam; Orenberg, James B.

    1988-01-01

    Experimental results are presented for the verification of the specific interaction step of the 'adsorbed template' biogeochemical cycle, a simple model for a primitive prebiotic replication system. The experimental system consisted of gypsum as the mineral to which an oligonucleotide template attaches (Poly-C or Poly-U) and (5-prime)-AMP, (5-prime)-GMP, (5-prime)-CMP and (5-prime)-UMP as the interacting biomonomers. When Poly-C or Poly-U were used as adsorbed templates, (5-prime)-GMP and (5-prime)-AMP, respectively, were observed to be the most strongly adsorbed species.

  8. The biogeochemical cycle of the adsorbed template. II - Selective adsorption of mononucleotides on adsorbed polynucleotide templates

    Science.gov (United States)

    Lazard, Daniel; Lahav, Noam; Orenberg, James B.

    1988-01-01

    Experimental results are presented for the verification of the specific interaction step of the 'adsorbed template' biogeochemical cycle, a simple model for a primitive prebiotic replication system. The experimental system consisted of gypsum as the mineral to which an oligonucleotide template attaches (Poly-C or Poly-U) and (5-prime)-AMP, (5-prime)-GMP, (5-prime)-CMP and (5-prime)-UMP as the interacting biomonomers. When Poly-C or Poly-U were used as adsorbed templates, (5-prime)-GMP and (5-prime)-AMP, respectively, were observed to be the most strongly adsorbed species.

  9. High efficiency DC-DC converter using GaN transistors

    Science.gov (United States)

    Tómaş, Cosmin-Andrei; Grecu, Cristian; Pantazicǎ, Mihaela; Marghescu, Ion

    2015-02-01

    The paper presents a new high-efficiency power switching supply using the Gallium Nitride (GaN) technology. There are compared two solutions, the first using standard MOS transistors and the second using the new GaN transistor. The actual green technologies for obtaining the maximum energy and minimum losses have pushed the semiconductor industry into a continuous research regarding high power and high frequency devices, having uses in both digital communications and switching power supplies.

  10. The Effect of Atomic Vacancies and Grain Boundaries on Mechanical Properties of GaN Nanowires

    Institute of Scientific and Technical Information of China (English)

    XIE Shi-Feng; CHEN Shang-Da; SOS Ai-Kah

    2011-01-01

    @@ Molecular dynamics simulations are carried out to investigate the influences of various defects on mechanical properties of wurtzite GaN nanowires by adopting the empirical Stillinger-Weber potential.Different types of vacancies and grain boundaries are considered and the uniaxial loading condition is implemented along the [001] direction.It is found that surface defects have less impact on Voung's moduli and critical stresses of GaN nanowires compared with random defects.The grain boundary normal to the axial direction of a nanowire would not significantly affect Young's moduli of nanowires.However, the inversion domain grain boundaries with and without wrong bonds would significantly lower Young's moduli of GaN nanowires.In addition, the inversion domain grain boundary affects the critical stress of GaN nanowires more than the grain boundary with interface normal to the axial direction of the nanowire.%Molecular dynamics simulations are carried out to investigate the influences of various defects on mechanical properties of wurtzite GaN nanowires by adopting the empirical Stillinger-Weber potential. Different types of vacancies and grain boundaries are considered and the uniaxial loading condition is implemented along the [001] direction. It is found that surface defects have less impact on Young's moduli and critical stresses of GaN nanowires compared with random defects. The grain boundary normal to the axial direction of a nanowire would not significantly affect Young's moduli of nanowires. However, the inversion domain grain boundaries with and without wrong bonds would significantly lower Young's moduli of GaN nanowires. In addition, the inversion domain grain boundary affects the critical stress of GaN nanowires more than the grain boundary with interface normal to the axial direction of the nanowire.

  11. A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces

    Energy Technology Data Exchange (ETDEWEB)

    González-Hernández, Rafael, E-mail: rhernandezj@uninorte.edu.co [Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla (Colombia); González-García, Alvaro [Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla (Colombia); Barragán-Yani, Daniel [Fachgebiet Material modellierung, Institut für Materialwissenschaft, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, 64287 Darmstadt (Germany); López-Pérez, William [Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla (Colombia)

    2014-09-30

    Highlights: • A comparative analysis of the geometry and the electronic characteristics of nonpolar GaN surfaces was carried out. • Surface energies are too low for LDA, but lower still for GGA and MGGA functionals, except for PBEsol. • PBEsol exhibits good lattice parameters and surface energies. • Surface intra-gap states reduce the band gap of the nonpolar GaN surfaces. • Slight changes in the dispersion of surface states were observed for the LDA, GGA, and MGGA functionals. - Abstract: A comparative analysis of the geometry and the electronic characteristics of nonpolar GaN surfaces was carried out using density-functional theory (DFT) with different approximations for the exchange-correlation energy (LDA, PBE, PBEsol, RPBE, TPSS, revTPSS, and HSE). The obtained data show that the GaN(101{sup ¯}0) (m-plane) is more energetically stable than the GaN(112{sup ¯}0) (a-plane) surface. However, these surfaces have similar surface relaxation geometry, with a Ga-N surface bond-length contraction of around 6–7% and a Ga-N surface rotational angle in the range of 6–9°. Our results show that the use of different exchange-correlation functionals does not significantly change the surface energy and surface geometry. In addition, we found the presence of surface intra-gap states that reduce the band gap of the nonpolar GaN surface with respect to the bulk value, in agreement with recent photoelectron and surface optical spectroscopy experiments.

  12. Layer-by-layer growth of GaN induced by silicon

    Energy Technology Data Exchange (ETDEWEB)

    Munkholm, A. [Chemistry Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Thompson, Carol [Department of Physics, Northern Illinois University, DeKalb, Illinois 60115 (United States); Ramana Murty, M. V. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Eastman, J. A. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Auciello, O. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Stephenson, G. B. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Fini, P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2000-09-11

    We present in situ x-ray scattering studies of surface morphology evolution during metal-organic chemical vapor deposition of GaN. Dosing the GaN(0001) surface with Si is shown to change the growth mode from step-flow to layer-by-layer over a wide temperature range. Annealing of highly doped layers causes Si to segregate to the surface, which also induces layer-by-layer growth. (c) 2000 American Institute of Physics.

  13. Effects of Mg Doping on Photoconductivity of GaN Films

    Institute of Scientific and Technical Information of China (English)

    Deheng ZHANG; Qingpu WANG; Yunyan LIU

    2003-01-01

    This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the relax time was relatively short. With an increase in doped Mg content, the samples became p-type, the photocurrent response became weak and the relax time became longer.

  14. The dispersion of BED ° in unintentional doped GaN crystals

    Science.gov (United States)

    Qingcheng, Bao; Fungleng, Zhang; Ke, Shi; Rensong, Dai; Xurong, Xu

    1986-09-01

    The polarization and the wavelength of the photoluminescence of BED ° in not intentionaly doped GaN crystal wafers are observed to be dependent on the excitation intensity (I-exc). When I-exc increases from 1 KW/CM 2 to 1000 KW/CM 2, they vary at first quadratically, and then, appear saturated. This phenomenon is resulted from dispersion effect of BED ° in GaN crystal wafers, which is proposed earlier (1).

  15. Comparison of Electronic and Optical Properties of GaN Monolayer and Bulk Structure: a First Principle Study

    Science.gov (United States)

    Imran, Muhammad; Hussain, Fayyaz; Rashid, Muhammad; Ullah, Hafeez; Sattar, Atif; Iqbal, Faisal; Ahmad, Ejaz

    2016-03-01

    The semiconducting two-dimensional (2D) architectures materials have potential applications in electronics and optics. The design and search of new 2D materials have attracted extensive attention recently. In this study, first principle calculation has been done on 2D gallium nitride (GaN) monolayer with respect to its formation and binding energies. The electronic and optical properties are also investigated. It is found that the single isolated GaN sheet is forming mainly ionic GaN bonds despite a slightly weaker GaN interaction as compared with its bulk counterpart. The dielectric constant value of 2D GaN is smaller as compared to 3D GaN due to less effective electronic screening effect in the layer, which is accompanied by lesser optical adsorption range and suggested to be a promising candidate in electronic and optoelectronic devices.

  16. Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface

    Science.gov (United States)

    Sun, Xiaojuan; Li, Dabing; Jiang, Hong; Li, Zhiming; Song, Hang; Chen, Yiren; Miao, Guoqing

    2011-03-01

    GaN metal-semiconductor-metal (MSM) ultraviolet detectors were investigated by depositing different density of SiO2 nanoparticles (SNPs) on the GaN. It was shown that the dark current of the detectors with SNPs was more than one order of magnitude lower than that without SNPs and the peak responsivity was enhanced after deposition of the SNPs. Atomic force microscopy observations indicated that the SNPs usually formed at the termination of screw and mixed dislocations, and further current-voltage measurements showed that the leakage of the Schottky contact for the GaN MSM detector decreased with deposited the SNPs. Moreover, the leakage obeyed the Frenkel-Poole emission model, which meant that the mechanism for improving the performance is the SNPs passivation of the dislocations followed by the reduction in the dark current.

  17. Controlling monomer-sequence using supramolecular templates

    OpenAIRE

    ten Brummelhuis, Niels

    2014-01-01

    The transcription and translation of information contained in nucleic acids that has been perfected by nature serves as inspiration for chemists to devise strategies for the creation of polymers with welldefined monomer sequences. In this review the various approaches in which templates (either biopolymers or synthetic ones) are used to influence the monomer-sequence are discussed.

  18. A lightweight approach for biometric template protection

    Science.gov (United States)

    Al-Assam, Hisham; Sellahewa, Harin; Jassim, Sabah

    2009-05-01

    Privacy and security are vital concerns for practical biometric systems. The concept of cancelable or revocable biometrics has been proposed as a solution for biometric template security. Revocable biometric means that biometric templates are no longer fixed over time and could be revoked in the same way as lost or stolen credit cards are. In this paper, we describe a novel and an efficient approach to biometric template protection that meets the revocability property. This scheme can be incorporated into any biometric verification scheme while maintaining, if not improving, the accuracy of the original biometric system. However, we shall demonstrate the result of applying such transforms on face biometric templates and compare the efficiency of our approach with that of the well-known random projection techniques. We shall also present the results of experimental work on recognition accuracy before and after applying the proposed transform on feature vectors that are generated by wavelet transforms. These results are based on experiments conducted on a number of well-known face image databases, e.g. Yale and ORL databases.

  19. Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chan-Mi; Lee, Gang Seok [Department of Applied Science, Korea Maritime and Ocean University, Busan 606-791 (Korea, Republic of); Jeon, In-Jun [Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791 (Korea, Republic of); Ahn, Hyung Soo [Department of Applied Science, Korea Maritime and Ocean University, Busan 606-791 (Korea, Republic of); Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791 (Korea, Republic of); Yi, Sam Nyung, E-mail: snyi@kmou.ac.kr [Department of Applied Science, Korea Maritime and Ocean University, Busan 606-791 (Korea, Republic of); Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791 (Korea, Republic of); Ha, Dong Han [Division of Convergence Technology, Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of)

    2015-08-15

    Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.

  20. Strain-induced step bunching in orientation-controlled GaN on Si

    Science.gov (United States)

    Narita, Tetsuo; Iguchi, Hiroko; Horibuchi, Kayo; Otake, Nobuyuki; Hoshi, Shinichi; Tomita, Kazuyoshi

    2016-05-01

    We report a technique for the fabrication of high-quality GaN-on-silicon (Si) substrates for use in various power applications. GaN epitaxial layers were generated on Si(111) vicinal faces that had been previously covered with a thin coating of Al2O3 to control the orientation of the AlN seed layers. We obtained orientation-controlled GaN layers and found a linear relationship between the GaN c-axis and Si[111] tilt angles. As a result, the threading dislocation density in the AlN seed layer was reduced and high-quality GaN layers were generated. The X-ray rocking curves for these layers exhibited full width at half maximum values of 390‧‧ and 550‧‧ for the (004) and (114) reflections, respectively. Significant step bunching was observed on a GaN(0001) vicinal face produced using this technique, attributed to strain-induced attractive interactions between steps. Thus, by controlling the strain near the surface layer, we achieved the step flow growth of GaN on Si.

  1. Carbon nanotube assisted Lift off of GaN layers on sapphire

    Science.gov (United States)

    Long, Hao; Feng, Xiaohui; Wei, Yang; Yu, Tongjun; Fan, Shoushan; Ying, Leiying; Zhang, Baoping

    2017-02-01

    Laser lift off (LLO) was one of the most essential processes in fabrication of vertical GaN-based LEDs. However, traditional laser lift off of GaN on sapphire substrates needed high laser energy threshold, which deteriorated the GaN crystal. In this paper, it was found that inserting carbon nanotube between GaN and sapphire could effectively reduce the laser energy threshold in GaN LLO, from 1.5 J /cm2 of conventional GaN/sapphire to 1.3 J /cm2 of CNT inserted GaN/sapphire. The temperature distributions at the GaN/sapphire interfaces with and without CNTs were simulated by the finite elements calculation under laser irradiation. It was found that, due to the higher laser absorption coefficient of CNT, the CNT played as a powerful heating wire, sending out the thermal outside to elevate the GaN's temperature, and thus reduce the laser threshold for LLO. Raman and photoluminescence measurements indicated that residual stress of GaN membranes was as small as 0.3 GPa by the carbon nanotube assisted LLO. This work not only opens new application of CNTs, but also demonstrates the potential of high performance blue and green LEDs.

  2. Fabrication and characterization of GaN nanowire doubly clamped resonators

    Energy Technology Data Exchange (ETDEWEB)

    Maliakkal, Carina B., E-mail: carina@tifr.res.in; Mathew, John P.; Hatui, Nirupam; Rahman, A. Azizur; Deshmukh, Mandar M.; Bhattacharya, Arnab [Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)

    2015-09-21

    Gallium nitride (GaN) nanowires (NWs) have been intensely researched as building blocks for nanoscale electronic and photonic device applications; however, the mechanical properties of GaN nanostructures have not been explored in detail. The rigidity, thermal stability, and piezoelectric properties of GaN make it an interesting candidate for nano-electromechanical systems. We have fabricated doubly clamped GaN NW electromechanical resonators on sapphire using electron beam lithography and estimated the Young's modulus of GaN from resonance frequency measurements. For wires of triangular cross section with side ∼90 nm, we obtained values for the Young's modulus to be about 218 and 691 GPa, which are of the same order of magnitude as the values reported for bulk GaN. We also discuss the role of residual strain in the nanowire on the resonant frequency and the orientation dependence of the Young's modulus in wurtzite crystals.

  3. From Stable ZnO and GaN Clusters to Novel Double Bubbles and Frameworks

    Directory of Open Access Journals (Sweden)

    Matthew R. Farrow

    2014-05-01

    Full Text Available A bottom up approach is employed in the design of novel materials: first, gas-phase “double bubble” clusters are constructed from high symmetry, Th, 24 and 96 atom, single bubbles of ZnO and GaN. These are used to construct bulk frameworks. Upon geometry optimization—minimisation of energies and forces computed using density functional theory—the symmetry of the double bubble clusters is reduced to either C1 or C2, and the average bond lengths for the outer bubbles are 1.9 Å, whereas the average bonds for the inner bubble are larger for ZnO than for GaN; 2.0 Å and 1.9 Å, respectively. A careful analysis of the bond distributions reveals that the inter-bubble bonds are bi-modal, and that there is a greater distortion for ZnO. Similar bond distributions are found for the corresponding frameworks. The distortion of the ZnO double bubble is found to be related to the increased flexibility of the outer bubble when composed of ZnO rather than GaN, which is reflected in their bulk moduli. The energetics suggest that (ZnO12@(GaN48 is more stable both in gas phase and bulk frameworks than (ZnO12@(ZnO48 and (GaN12@(GaN48. Formation enthalpies are similar to those found for carbon fullerenes.

  4. Synthesis of GaN Nanorods by a Solid-State Reaction

    Directory of Open Access Journals (Sweden)

    Keyan Bao

    2010-01-01

    Full Text Available An atom-economical and eco-friendly chemical synthetic route was developed to synthesize wurtzite GaN nanorods by the reaction of NaNH2 and the as-synthesized orthorhombic GaOOH nanorods in a stainless steel autoclave at 600∘C. The lengths of the GaN nanorods are in the range of 400–600 nm and the diameters are about 80–150 nm. The process of orthorhombic GaOOH nanorods transformation into wurtzite GaN nanorods was investigated by powder X-ray diffraction (XRD and field emission scanning electron microscope (FESEM, indicating that the GaN product retained essentially the same basic topological morphology in contrast to that of the GaOOH precursor. It was found that rhombohedral Ga2O3 was the intermediate between the starting orthorhombic GaOOH precursor and the final wurtzite GaN product. The photoluminescence measurements reveal that the as-prepared wurtzite GaN nanorods showed strong blue emission.

  5. Enhanced water splitting with silver decorated GaN photoelectrode

    Science.gov (United States)

    Hou, Y.; Syed, Z. A.; Smith, R.; Athanasiou, M.; Gong, Y.; Yu, X.; Bai, J.; Wang, T.

    2016-07-01

    By means of a cost-effective approach, we demonstrate a GaN-based photoelectrode decorated with self-organized silver nano-islands employed for solar powered hydrogen generation, demonstrating 4 times increase in photocurrent compared with a reference sample without using any silver. Our photoelectrode exhibits a 60% incident photon-to-electron conversion efficiency. The enhanced hydrogen generation is attributed to a significantly increased carrier generation rate as a result of strongly localized electric fields induced by surface plasmon coupling effect. The silver coating also contributes to the good chemical stability of our photoelectrode in a strong alkali electrolyte. This work paves the way for the development of GaN and also InGaN based photoelectrodes with ultra-high solar hydrogen conversion efficiency.

  6. 5 Watt GaN HEMT Power Amplifier for LTE

    Directory of Open Access Journals (Sweden)

    K. Niotaki

    2014-04-01

    Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

  7. GaN Metal Oxide Semiconductor Field Effect Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

    1999-03-02

    A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

  8. Microstructure of laterally overgrown GaN layers

    Energy Technology Data Exchange (ETDEWEB)

    Liliental-Weber, Zuzanna; Cherns, David

    2001-04-03

    Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.

  9. Monte Carlo Evaluation of Tritium Beta Spectrum Energy Deposition in Gallium Nitride (GaN) Direct Energy Conversion Devices

    Science.gov (United States)

    2014-09-01

    Monte Carlo Evaluation of Tritium Beta Spectrum Energy Deposition in Gallium Nitride (GaN) Direct Energy Conversion Devices by Marc Litz...MD 20783-1138 ARL-TR-7082 September 2014 Monte Carlo Evaluation of Tritium Beta Spectrum Energy Deposition in Gallium Nitride (GaN... Tritium Beta Spectrum Energy Deposition in Gallium Nitride (GaN) Direct Energy Conversion Devices 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  10. Status of Structural Analysis of Substrates and Film Growth Inputs for GaN Device Development Program

    Science.gov (United States)

    2011-01-01

    from 8 scans per 2” sample to 32. Our team has been developing GaN Schottky diodes and HEMTs with segments of these wafers. 12 Figure 7. Ranking...analysis of variance Asym asymmetric x-ray scan CL cathodoluminescence FOM figure of merit FWHM full width at half maximum GaN gallium nitride HEMT ...Status of Structural Analysis of Substrates and Film Growth Inputs for GaN Device Development Program by Kevin Kirchner ARL-TR-5427

  11. Templated Self Assemble of Nano-Structures

    Energy Technology Data Exchange (ETDEWEB)

    Suo, Zhigang [Harvard University

    2013-04-29

    This project will identify and model mechanisms that template the self-assembly of nanostructures. We focus on a class of systems involving a two-phase monolayer of molecules adsorbed on a solid surface. At a suitably elevated temperature, the molecules diffuse on the surface to reduce the combined free energy of mixing, phase boundary, elastic field, and electrostatic field. With no template, the phases may form a pattern of stripes or disks. The feature size is on the order of 1-100 nm, selected to compromise the phase boundary energy and the long-range elastic or electrostatic interaction. Both experimental observations and our theoretical simulations have shown that the pattern resembles a periodic lattice, but has abundant imperfections. To form a perfect periodic pattern, or a designed aperiodic pattern, one must introduce a template to guide the assembly. For example, a coarse-scale pattern, lithographically defined on the substrate, will guide the assembly of the nanoscale pattern. As another example, if the molecules on the substrate surface carry strong electric dipoles, a charged object, placed in the space above the monolayer, will guide the assembly of the molecular dipoles. In particular, the charged object can be a mask with a designed nanoscale topographic pattern. A serial process (e.g., e-beam lithography) is necessary to make the mask, but the pattern transfer to the molecules on the substrate is a parallel process. The technique is potentially a high throughput, low cost process to pattern a monolayer. The monolayer pattern itself may serve as a template to fabricate a functional structure. This project will model fundamental aspects of these processes, including thermodynamics and kinetics of self-assembly, templated self-assembly, and self-assembly on unconventional substrates. It is envisioned that the theory will not only explain the available experimental observations, but also motivate new experiments.

  12. Review of Research on Template Methods in Preparation of Nanomaterials

    Directory of Open Access Journals (Sweden)

    Yadian Xie

    2016-01-01

    Full Text Available The nanomaterials have been widely used in various fields, such as photonics, catalysis, and adsorption, because of their unique physical and chemical properties. Therefore, their production methods are of utmost importance. Compared with traditional synthetic methods, the template method can effectively control the morphology, particle size, and structure during the preparation of nanomaterials, which is an effective method for their synthesis. The key for the template method is to choose different templates, which are divided into hard template and soft template according to their different structures. In this paper, the effects of different types of templates on the morphology of nanomaterials during their preparation are investigated from two aspects: hard template and soft template, combined with the mechanism of action.

  13. Emergency department documentation templates: variability in template selection and association with physical examination and test ordering in dizziness presentations

    Directory of Open Access Journals (Sweden)

    Meurer William J

    2011-03-01

    Full Text Available Abstract Background Clinical documentation systems, such as templates, have been associated with process utilization. The T-System emergency department (ED templates are widely used but lacking are analyses of the templates association with processes. This system is also unique because of the many different template options available, and thus the selection of the template may also be important. We aimed to describe the selection of templates in ED dizziness presentations and to investigate the association between items on templates and process utilization. Methods Dizziness visits were captured from a population-based study of EDs that use documentation templates. Two relevant process outcomes were assessed: head computerized tomography (CT scan and nystagmus examination. Multivariable logistic regression was used to estimate the probability of each outcome for patients who did or did not receive a relevant-item template. Propensity scores were also used to adjust for selection effects. Results The final cohort was 1,485 visits. Thirty-one different templates were used. Use of a template with a head CT item was associated with an increase in the adjusted probability of head CT utilization from 12.2% (95% CI, 8.9%-16.6% to 29.3% (95% CI, 26.0%-32.9%. The adjusted probability of documentation of a nystagmus assessment increased from 12.0% (95%CI, 8.8%-16.2% when a nystagmus-item template was not used to 95.0% (95% CI, 92.8%-96.6% when a nystagmus-item template was used. The associations remained significant after propensity score adjustments. Conclusions Providers use many different templates in dizziness presentations. Important differences exist in the various templates and the template that is used likely impacts process utilization, even though selection may be arbitrary. The optimal design and selection of templates may offer a feasible and effective opportunity to improve care delivery.

  14. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    Science.gov (United States)

    Zhao, Qian; Xiong, Zhihua; Luo, Lan; Sun, Zhenhui; Qin, Zhenzhen; Chen, Lanli; Wu, Ning

    2017-02-01

    To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic-antiferromagnetic transformation occurs under compressive strain of -9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  15. An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

    Science.gov (United States)

    Törmä, P. T.; Ali, M.; Svensk, O.; Sintonen, S.; Kostamo, P.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2009-12-01

    GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface.

  16. Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    CHEN Yao; JIANG Yang; XU Pei-Qiang; MA Zi-Guang; WANG Xiao-Li; WANG Lu; JIA Hai-Qiang; CHEN Hong

    2011-01-01

    The strain in GaN epitaxial layers grown on 6H-SiC substrates with an AIN buffer by metalorganic chemical wpor deposition is investigated.It is found that the insertion of a graded AlGaN layer between the GaN layer and the AIN buffer can change the signs of strain.A compressive strain in an overgrown thick (2 μm) GaN layer is obtained.High-resolution x-ray diffraction, Raman spectroscopy and photoluminescence measurements are used to determine the strain state in the GaN layers.The mechanism of stress control by inserting graded AlGaN in subsequent GaN layers is discussed briefly.%@@ The strain in GaN epitaxial layers grown on 611-SiC substrates with an AIN buffer by metalorganic chemical vapor deposition is investigated.It is found that the insertion of a graded AlGaN layer between the GaN layer and the AIN buffer can change the signs of strain.A compressive strain in an overgrown thick(2μm)GaN layer is obtained.High-resolution x-ray diffraction, Raman spectroscopy and photoluminescence measurements are used to determine the strain state in the GaN layers.The mechanism of stress control by inserting graded AlGaN in subsequent GaN layers is discussed briefly.

  17. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    McSkimming, Brian M., E-mail: mcskimming@engineering.ucsb.edu; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Chaix, Catherine [RIBER S.A., 3a Rue Casimir Périer, BP 70083, 95873 Bezons Cedex (France)

    2015-09-15

    In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.

  18. Business Process Variability : A Tool for Declarative Template Design

    NARCIS (Netherlands)

    Bulanov, P.; Groefsema, H.; Aiello, M.

    2012-01-01

    To lower both implementation time and cost, many Business Process Management tools use process templates to implement highly recurring processes. However, in order for such templates to be used, a process has to adhere substantially to the template. Therefore, current practice for processes which de

  19. Templated electrodeposition of functional nanostructures: nanowires, nanotubes and nanocubes

    NARCIS (Netherlands)

    Maijenburg, Albert Wouter

    2014-01-01

    This thesis is entitled “Templated electrodeposition of functional nanostructures: nanowires, nanotubes and nanocubes”. Templated electrodeposition is the synthesis technique that was used throughout this thesis, and it comprises the use of a template with specific shape and dimensions for the forma

  20. Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bartłomiej; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Sankowska, Iwona [The Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa (Poland)

    2016-09-15

    Herein, silicon substrates in alternative orientations from the commonly used Si(111) were used to enable the growth of polar and semipolar GaN-based structures by the metalorganic vapor phase epitaxy method. Specifically, Si(112) and Si(115) substrates were used for the epitaxial growth of nitride multilayer structures, while the same layer schemes were also deposited on Si(111) for comparison purposes. Multiple approaches were studied to examine the influence of the seed layers and the growth process conditions upon the final properties of the GaN/Si(11x) templates. Scanning electron microscope images were acquired to examine the topography of the deposited samples. It was observed that the substrate orientation and the process conditions allow control to produce an isolated GaN block growth or a coalesced layer growth, resulting in inclined c-axis GaN structures under various forms. The angles of the GaN c-axis inclination were determined by x-ray diffraction measurements and compared with the results obtained from the analysis of the atomic force microscope (AFM) images. The AFM image analysis method to determine the structure tilt was found to be a viable method to estimate the c-axis inclination angles of the isolated blocks and the not-fully coalesced layers. The quality of the grown samples was characterized by the photoluminescence method conducted at a wide range of temperatures from 77 to 297 K, and was correlated with the sample degree of coalescence. Using the free-excitation peak positions plotted as a function of temperature, analytical Bose-Einstein model parameters were fitted to obtain further information about the grown structures.

  1. Piezo-generator integrating a vertical array of GaN nanowires.

    Science.gov (United States)

    Jamond, N; Chrétien, P; Houzé, F; Lu, L; Largeau, L; Maugain, O; Travers, L; Harmand, J C; Glas, F; Lefeuvre, E; Tchernycheva, M; Gogneau, N

    2016-08-12

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm(-3). This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  2. Carbon Nanotube Templated Asembly of Protein

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Guodong; Lin, Yuehe

    2006-04-01

    This paper describes a novel general strategy for fabricating protein-polyion multilayers by electrostatic layer-by-layer (LBL) self-assembly on a carbon nanotube (CNT) template. Such a noncovalent functionalization method is important for preserving the activity of biomolecules and the mechanical and electrical properties of CNTs. Glucose oxidase and poly (diallydimethylammonium) chloride polymer were used as a model to investigate the LBL process on a CNT template. High-resolution transmission electron microscopy and electrochemical characterization confirm the formation of LBL nanostructures on carboxyl functionalized CNTs. We have also demonstrated the applications of these nanoshell bioreactors to the direct electrochemistry of proteins and biosensing. This strategy can be applied to assemble other biological molecules, such as antibodies, antigens, and DNA, for wide bioassay applications.

  3. Physical synthesis of quantum circuits using templates

    Science.gov (United States)

    Mirkhani, Zahra; Mohammadzadeh, Naser

    2016-10-01

    Similar to traditional CMOS circuits, quantum circuit design flow is divided into two main processes: logic synthesis and physical design. Addressing the limitations imposed on optimization of the quantum circuit metrics because of no information sharing between logic synthesis and physical design processes, the concept of " physical synthesis" was introduced for quantum circuit flow, and a few techniques were proposed for it. Following that concept, in this paper a new approach for physical synthesis inspired by template matching idea in quantum logic synthesis is proposed to improve the latency of quantum circuits. Experiments show that by using template matching as a physical synthesis approach, the latency of quantum circuits can be improved by more than 23.55 % on average.

  4. Metathesis depolymerization for removable surfactant templates.

    Energy Technology Data Exchange (ETDEWEB)

    Zifer, Thomas (Sandia National Laboratories, Livermore, CA); Wheeler, David Roger; Rahimian, Kamayar; McElhanon, James Ross (Sandia National Laboratories, Livermore, CA); Long, Timothy Michael; Jamison, Gregory Marks; Loy, Douglas Anson (Los Alamos National Laboratories, Los Alamos, NM); Kline, Steven R. (National Institute of Standards and Technology, Gaithersburg, MD); Simmons, Blake Alexander (Sandia National Laboratories, Livermore, CA)

    2005-03-01

    Current methodologies for the production of meso- and nanoporous materials include the use of a surfactant to produce a self-assembled template around which the material is formed. However, post-production surfactant removal often requires centrifugation, calcination, and/or solvent washing which can damage the initially formed material architecture(s). Surfactants that can be disassembled into easily removable fragments following material preparation would minimize processing damage to the material structure, facilitating formation of templated hybrid architectures. Herein, we describe the design and synthesis of novel cationic and anionic surfactants with regularly spaced unsaturation in their hydrophobic hydrocarbon tails and the first application of ring closing metathesis depolymerization to surfactant degradation resulting in the mild, facile decomposition of these new compounds to produce relatively volatile nonsurface active remnants.

  5. Deep Human Parsing with Active Template Regression.

    Science.gov (United States)

    Liang, Xiaodan; Liu, Si; Shen, Xiaohui; Yang, Jianchao; Liu, Luoqi; Dong, Jian; Lin, Liang; Yan, Shuicheng

    2015-12-01

    In this work, the human parsing task, namely decomposing a human image into semantic fashion/body regions, is formulated as an active template regression (ATR) problem, where the normalized mask of each fashion/body item is expressed as the linear combination of the learned mask templates, and then morphed to a more precise mask with the active shape parameters, including position, scale and visibility of each semantic region. The mask template coefficients and the active shape parameters together can generate the human parsing results, and are thus called the structure outputs for human parsing. The deep Convolutional Neural Network (CNN) is utilized to build the end-to-end relation between the input human image and the structure outputs for human parsing. More specifically, the structure outputs are predicted by two separate networks. The first CNN network is with max-pooling, and designed to predict the template coefficients for each label mask, while the second CNN network is without max-pooling to preserve sensitivity to label mask position and accurately predict the active shape parameters. For a new image, the structure outputs of the two networks are fused to generate the probability of each label for each pixel, and super-pixel smoothing is finally used to refine the human parsing result. Comprehensive evaluations on a large dataset well demonstrate the significant superiority of the ATR framework over other state-of-the-arts for human parsing. In particular, the F1-score reaches 64.38 percent by our ATR framework, significantly higher than 44.76 percent based on the state-of-the-art algorithm [28].

  6. Multibiometric Systems: Fusion Strategies and Template Security

    Science.gov (United States)

    2008-01-01

    gratitude to Linda Moore, Debbie Kruch, Cathy Davison, Starr Portice, Norma Teague, Kim Thompson, Cathy Sparks, Sue Watson and Adam Pitcher for their...Weighted sum rule Red, Green , Blue channels for face [109] Match score Sum and min rules [166] Feature; match score Feature selection and concatenation...FVC2002-DB2 database, mosaiced template leads to a GAR of 94% and 3The core point was detected using the commercial Neurotechnologija Verifinger software

  7. CPU and GPU (Cuda Template Matching Comparison

    Directory of Open Access Journals (Sweden)

    Evaldas Borcovas

    2014-05-01

    Full Text Available Image processing, computer vision or other complicated opticalinformation processing algorithms require large resources. It isoften desired to execute algorithms in real time. It is hard tofulfill such requirements with single CPU processor. NVidiaproposed CUDA technology enables programmer to use theGPU resources in the computer. Current research was madewith Intel Pentium Dual-Core T4500 2.3 GHz processor with4 GB RAM DDR3 (CPU I, NVidia GeForce GT320M CUDAcompliable graphics card (GPU I and Intel Core I5-2500K3.3 GHz processor with 4 GB RAM DDR3 (CPU II, NVidiaGeForce GTX 560 CUDA compatible graphic card (GPU II.Additional libraries as OpenCV 2.1 and OpenCV 2.4.0 CUDAcompliable were used for the testing. Main test were made withstandard function MatchTemplate from the OpenCV libraries.The algorithm uses a main image and a template. An influenceof these factors was tested. Main image and template have beenresized and the algorithm computing time and performancein Gtpix/s have been measured. According to the informationobtained from the research GPU computing using the hardwarementioned earlier is till 24 times faster when it is processing abig amount of information. When the images are small the performanceof CPU and GPU are not significantly different. Thechoice of the template size makes influence on calculating withCPU. Difference in the computing time between the GPUs canbe explained by the number of cores which they have.

  8. UV NIL template making and imprint evaluation

    Science.gov (United States)

    Sasaki, Shiho; Hiraka, Takaaki; Mizuochi, Jun; Sakai, Yuko; Yusa, Satoshi; Morikawa, Yasutaka; Mohri, Hiroshi; Hayashi, Naoya

    2009-01-01

    UV NIL shows excellent resolution capability with remarkable low line edge roughness, and has been attracting pioneers in the industry who were searching for the finest patterns. We have been focused on the resolution improvement in NIL template making with a 100keV acceleration voltage spot beam EB writer process, and have established a template making process to meet the requirements of the pioneers. Usually such templates needed just a small field (several hundred microns square or so) Now, for several semiconductor devices, the UV NIL is considered not only as a patterning solution for R&D purpose but eventually as a potential candidate for production, and instead of a small field, a full chip field mask is required. Although the 100kV EB writers have excellent resolution capability, they are adopting spot beams (SB) to generate the pattern and have a fatally low throughput if we need full chip writing. In this paper, we are focusing on the 50keV variable shaped beam (VSB) EB writers, which are used in current 4X photomask manufacturing. The 50keV VSB writers can generate full chip pattern in a reasonable time, and by choosing the right patterning material and process, we achieved resolution down to hp28nm, and initial promising results of hp22nm (partial resolution) for line and spaces, and hp26nm for dense holes were observed..

  9. Template learning in morphological neural nets

    Science.gov (United States)

    Davidson, Jennifer L.; Sun, K.

    1991-07-01

    This paper presents an application of morphology neural networks to a template learning problem. Morphology neural networks are a nonlinear version of the familiar artificial neural networks. Typically, an artificial neural net is used to solve pattern classification problems One useful characterization of many neural network algorithms is the ability to 'learn' to respond correctly to new data based only on a selection of known data responses. For example, in the multilayer perceptron model, the 'learning' is a procedure whereby parameters are fed back from output to input neurons and the weights changed to give a better response. The morphological neural net in this paper solves a different type of image processing problem. Specifically, given an input image and an output image which corresponds to a dilated version of the input, one would like to determine what template produced the output. The problem corresponds to teaching the network to solve for the weights in a morphological net, as the weights are the template's values. A reasonable method has been investigated for the boolean case; in this paper results are presented for gray scale images. Image algebra has been shown to provide a succinct expression of neural networks algorithms and also to allow a generalization of neural networks, and thus the authors describe the algorithm in image algebra. The remainder of the paper gives a brief discussion of image algebra, the relationship of image algebra and neural networks, a recap of the dilation morphology neural network boolean for boolean images, and the generalization to grayscale data.

  10. Raman scattering study of B{sub x}Ga{sub 1-x}N growth on AlN template substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ould Saad Hamady, S. [LMOPS - UMR CNRS, Univ. Paul Verlaine Metz and Supelec - UMI, Georgia Tech-CNRS (France); Baghdadli, T.; Gautier, S.; Bouchaour, M.; Martin, J. [LMOPS - UMR CNRS, Univ. Paul Verlaine Metz and Supelec, Metz (France); Ougazzaden, A. [Georgia Institute of Technology/GTL, UMI, Georgia Tech-CNRS, Metz (France)

    2008-07-01

    In this study, Raman scattering measurements are reported on the B{sub x}Ga{sub 1-x}N layers grown on AlN-on-sapphire templates by MOVPE. The boron content covered the composition range from 0% (pure GaN) to 1.75%. The Raman spectra were recorded at 300 K with a confocal micro-Raman spectrometer in the backscattering geometries. Raman cartography at a lateral resolution of 1{mu}m was performed to study the spatial variation of the phonon peaks characteristics. The homogeneity of BGaN layers was studied and the phonon modes characteristics are determined as a function of composition, with respect to the laser polarisation. The E{sub 2} and A{sub 1}(LO) modes frequencies are shifted with respect to the pure GaN. The A{sub 1}(LO) mode behaviour correlates well with the free carriers concentration measured by Hall Effect method, indicating a phonon-plasmon coupling decreasing with increasing boron content in alloy. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. GaN Initiative for Grid Applications (GIGA)

    Energy Technology Data Exchange (ETDEWEB)

    Turner, George [MIT Lincoln Lab., Lexington, MA (United States)

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and

  12. Converting Basic D3 Charts into Reusable Style Templates.

    Science.gov (United States)

    Harper, Jonathan; Agrawala, Maneesh

    2017-02-07

    We present a technique for converting a basic D3 chart into a reusable style template. Then, given a new data source we can apply the style template to generate a chart that depicts the new data, but in the style of the template. To construct the style template we first deconstruct the input D3 chart to recover its underlying structure: the data, the marks and the mappings that describe how the marks encode the data. We then rank the perceptual effectiveness of the deconstructed mappings. To apply the resulting style template to a new data source we first obtain importance ranks for each new data field. We then adjust the template mappings to depict the source data by matching the most important data fields to the most perceptually effective mappings. We show how the style templates can be applied to source data in the form of either a data table or another D3 chart. While our implementation focuses on generating templates for basic chart types (e.g. variants of bar charts, line charts, dot plots, scatterplots, etc.), these are the most commonly used chart types today. Users can easily find such basic D3 charts on the Web, turn them into templates, and immediately see how their own data would look in the visual style (e.g. colors, shapes, fonts, etc.) of the templates. We demonstrate the effectiveness of our approach by applying a diverse set of style templates to a variety of source datasets.

  13. GaN Microwave DC-DC Converters

    Science.gov (United States)

    Ramos Franco, Ignacio

    Increasing the operating frequency of switching converters can have a direct impact in the miniaturization and integration of power converters. The size of energy-storage passive components and the difficulty to integrate them with the rest of the circuitry is a major challenge in the development of a fully integrated power supply on a chip. The work presented in this thesis attempts to address some of the difficulties encountered in the design of high-frequency converters by applying concepts and techniques usually used in the design of high-efficiency power amplifiers and high-efficiency rectifiers at microwave frequencies. The main focus is in the analysis, design, and characterization of dc-dc converters operating at microwave frequencies in the low gigahertz range. The concept of PA-rectifier duality, where a high-efficiency power amplifier operates as a high-efficiency rectifier is investigated through non-linear simulations and experimentally validated. Additionally, the concept of a self-synchronous rectifier, where a transistor rectifier operates synchronously without the need of a RF source or driver is demonstrated. A theoretical analysis of a class-E self-synchronous rectifier is presented and validated through non-linear simulations and experiments. Two GaN class-E2 dc-dc converters operating at a switching frequency of 1 and 1.2 GHz are demonstrated. The converters achieve 80 % and 75 % dc-dc efficiency respectively and are among the highest-frequency and highest-efficiency reported in the literature. The application of the concepts established in the analysis of a self-synchronous rectifier to a power amplifier culminated in the development of an oscillating, self-synchronous class-E 2 dc-dc converter. Finally, a proof-of-concept fully integrated GaN MMIC class-E 2 dc-dc converter switching at 4.6 GHz is demonstrated for the first time to the best of our knowledge. The 3.8 mm x 2.6 mm chip contains distributed inductors and does not require any

  14. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    Energy Technology Data Exchange (ETDEWEB)

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined

  15. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    Energy Technology Data Exchange (ETDEWEB)

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined

  16. A Neonatal Bimodal MR-CT Head Template

    Science.gov (United States)

    Mohtasebi, Mehrana; Abrishami Moghaddam, Hamid; Grebe, Reinhard; Gity, Masoumeh; Wallois, Fabrice

    2017-01-01

    Neonatal MR templates are appropriate for brain structural analysis and spatial normalization. However, they do not provide the essential accurate details of cranial bones and fontanels-sutures. Distinctly, CT images provide the best contrast for bone definition and fontanels-sutures. In this paper, we present, for the first time, an approach to create a fully registered bimodal MR-CT head template for neonates with a gestational age of 39 to 42 weeks. Such a template is essential for structural and functional brain studies, which require precise geometry of the head including cranial bones and fontanels-sutures. Due to the special characteristics of the problem (which requires inter-subject inter-modality registration), a two-step intensity-based registration method is proposed to globally and locally align CT images with an available MR template. By applying groupwise registration, the new neonatal CT template is then created in full alignment with the MR template to build a bimodal MR-CT template. The mutual information value between the CT and the MR template is 1.17 which shows their perfect correspondence in the bimodal template. Moreover, the average mutual information value between normalized images and the CT template proposed in this study is 1.24±0.07. Comparing this value with the one reported in a previously published approach (0.63±0.07) demonstrates the better generalization properties of the new created template and the superiority of the proposed method for the creation of CT template in the standard space provided by MR neonatal head template. The neonatal bimodal MR-CT head template is freely downloadable from https://www.u-picardie.fr/labo/GRAMFC. PMID:28129340

  17. Strain engineering of atomic and electronic structures of few-monolayer-thick GaN

    Science.gov (United States)

    Kolobov, A. V.; Fons, P.; Saito, Y.; Tominaga, J.; Hyot, B.; André, B.

    2017-07-01

    Two-dimensional (2D) semiconductors possess the potential to ultimately minimize the size of devices and concomitantly drastically reduce the corresponding energy consumption. In addition, materials in their atomic-scale limit often possess properties different from their bulk counterparts paving the way to conceptually novel devices. While graphene and 2D transition-metal dichalcogenides remain the most studied materials, significant interest also exists in the fabrication of atomically thin structures from traditionally 3D semiconductors such as GaN. While in the monolayer limit GaN possesses a graphenelike structure and an indirect band gap, it was recently demonstrated that few-layer GaN acquires a Haeckelite structure in the direction of growth with an effectively direct gap. In this work, we demonstrate the possibility of strain engineering of the atomic and electronic structure of few-monolayer-thick GaN structures, which opens new avenues for their practical application in flexible nanoelectronics and nano-optoelectronics. Our simulations further suggest that due to the weak van der Waals-like interaction between a substrate and an overlayer, the use of a MoS2 substrate may be a promising route to fabricate few-monolayer Haeckelite GaN experimentally.

  18. Morphological characterization of selectively overgrown GaN via lateral epitaxy

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    @@ Introduction GaN has attracted a lot of research attention because it has lower Ohmic contact resistance, large electron saturation velocity and a large breakdown field, combined with excellent thermal conductivity and stability, making it an excellent material for high-temperature, high-power and high-brightness optoelectronic devices such as field effect transistors (FET), junction (FET), bipolar transistors and photodiodes[1]. Since threading dislocations resulting from large lattice mismatach and the difference between thermal expansion coefficients of epitaxial GaN and substrate severely degrade the optical and electric qualities of the GaN layer, high quality GaN is indeed required for manufacture of high performance optical device[2]. Characterization of the microstructures of selectively lateral overgrowth of epitaxial GaN using SEM is presented in this work with focus on fully understanding evolution of the morphology and dislocation distribution that occurs in the different growth situations in order for establishment of procession-microstructure-properties interrelations.

  19. The study of electronic structures and optical properties of Al-doped GaN

    Energy Technology Data Exchange (ETDEWEB)

    Li Enling; Hou Liping; Liu Mancang; Xi Meng; Wang Xiqiang; Dai Yuanbin [Sciences School, Xi' an University of Technology, Xi' an, China 710054 (China); Li Lisha, E-mail: lienling@xaut.edu.cn, E-mail: ping4917305@163.com [Physics, Northwest University, Xi' an, China 710068 (China)

    2011-02-01

    The electronic structures and optical properties of undoped and Al-doped GaN (Al{sub x}Ga{sub 1-x}N, x=0.0625, 0.125, 0.25) have been studied based on generalized gradient approximation (GGA) method of density functional theory (DFT). The differences of the electronic structures and optical properties of undoped and Al-doped GaN have been discussed in detail. The result shows: according to total density of state of undoped and Al-doped GaN, the conduction band becomes width and moves to high energy level with gradual increase concentration of Al impurity. Impurity energy band isn't found in energy band structures of Al{sub x}Ga{sub 1-x}N, the same as energy band structures of undoped GaN, but the band gaps gradually become wide with increase of Al impurity. Absorption spectra of undoped and Al-doped GaN of main absorption peak moves to high energy level with increase of Al impurity.

  20. Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN

    Science.gov (United States)

    Wang, Jie; Wang, Tongqing; Pan, Guoshun; Lu, Xinchun

    2016-08-01

    Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing (CMP) of GaN were deeply investigated in this paper. Working as an ideal homogeneous substrate material in LED industry, GaN ought to be equipped with a smooth and flat surface. Taking the strong chemical stability of GaN into account, photocatalytic oxidation technology was adopted in GaN CMP process to realize efficient removal. It was found that, because of the improved reaction rate of photocatalytic oxidation, GaN material removal rate (MRR) increases by a certain extent with catalyst concentration increasing. Cross single line analysis on the surface after polishing by Phase Shift MicroXAM-3D was carried out to prove the better removal effect with higher catalyst concentration. Ultraviolet intensity field in H2O2-SiO2-based polishing system was established and simulated, revealing the variation trend of ultraviolet intensity around the outlet of the slurry. It could be concluded that, owing to the higher planarization efficiency and lower energy damage, the UV lamp of 125 W is the most appropriate lamp in this system. Based on the analysis, defects removal model of this work was proposed to describe the effects of higher catalyst concentration and higher power of UV lamp.

  1. The finding of natural GaN crystals in sediments from the East Pacific Ocean

    Institute of Scientific and Technical Information of China (English)

    CHEN Jing; SHI Xuefa; ZHANG Haiping; Lü Huahua; FU Zhendong

    2006-01-01

    The first finding of natural GaN crystals is reported in sediments from the East Pacific. They are identified by multiple micro-beam techniques such as TEM, EDS and EELS. Detailed examinations show that these GaN crystals are euhedral and authigenic, and belong to the hexagonal system (space group P63mc) with cell parameters: a = b = 0.3186 nm, c = 0.5178 nm. Structure data fit closely with those of the synthetic GaN crystals obtained from high-temperature and high-pressure experiments. Moreover, the nearly perfect euhedral form of the sample excludes the possible synthetic origin of the GaN crystals as artifacts with long transport. The sampling localities are located between the Clarion and Clipperton Fracture Zone in the East Pacific where ongoing hydrothermal activities, deformation, and volcanic eruptions are very intensive. It is suggested that the natural GaN crystals may form at relatively high-temperature and high-pressure conditions in geologic environments that have been affected by intense hydrothermal activities.

  2. The optimal thickness of a transmission-mode GaN photocathode

    Institute of Scientific and Technical Information of China (English)

    Wang Xiao-Hui; Shi Feng; Guo Hui; Hu Cang-Lu; Cheng Hong-Chang; Chang Ben-Kang; Ren Ling; Du Yu-Jie; Zhang Jun-Ju

    2012-01-01

    A 150-nm-thick GaN photocathode with a Mg doping concentration of 1.6 × 1017 cm-3 is activated by Cs/O in an ultrahigh vacuum chamber,and a quantum efficiency (QE) curve of the negative electron affinity transmission-mode (t-mode) of the GaN photocathode is obtained.The maximum QE reaches 13.0% at 290 nm.According to the t-mode QE equation solved from the diffusion equation,the QE curve is fitted.From the fitting results,the electron escape probability is 0.32,the back-interface recombination velocity is 5 × 104 cm·s-1,and the electron diffusion length is 116 nm.Based on these parameters,the influence of GaN thickness on t-mode QE is simulated.The simulation shows that the optimal thickness of GaN is 90 nm,which is better than the 150-nm GaN.

  3. Nanotexturing of GaN light-emitting diode material through mask-less dry etching

    Energy Technology Data Exchange (ETDEWEB)

    Dylewicz, Rafal; Khokhar, Ali Z; Rahman, Faiz [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Wasielewski, Radoslaw; Mazur, Piotr, E-mail: Faiz.Rahman@glasgow.ac.uk [Institute of Experimental Physics, University of Wroclaw, plac Maxa Borna 9, 50-204 Wroclaw (Poland)

    2011-02-04

    We describe a new technique for random surface texturing of a gallium nitride (GaN) light-emitting diode wafer through a mask-less dry etch process. This involves depositing a sub-monolayer film of silica nanospheres (typical diameter of 200 nm) and then subjecting the coated wafer to a dry etch process with enhanced physical bombardment. The silica spheres acting as nanotargets get sputtered and silica fragments are randomly deposited on the GaN epi-layer. Subsequently, the reactive component of the dry etch plasma etches through the exposed GaN surface. Silica fragments act as nanoparticles, locally masking the underlying GaN. The etch rate is much reduced at these sites and consequently a rough topography develops. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) inspections show that random topographic features at the scale of a few tens of nanometres are formed. Optical measurements using angle-resolved photoluminescence show that GaN light-emitting diode material thus roughened has the capability to extract more light from within the epilayers.

  4. Nanotexturing of GaN light-emitting diode material through mask-less dry etching

    Science.gov (United States)

    Dylewicz, Rafal; Khokhar, Ali Z.; Wasielewski, Radoslaw; Mazur, Piotr; Rahman, Faiz

    2011-02-01

    We describe a new technique for random surface texturing of a gallium nitride (GaN) light-emitting diode wafer through a mask-less dry etch process. This involves depositing a sub-monolayer film of silica nanospheres (typical diameter of 200 nm) and then subjecting the coated wafer to a dry etch process with enhanced physical bombardment. The silica spheres acting as nanotargets get sputtered and silica fragments are randomly deposited on the GaN epi-layer. Subsequently, the reactive component of the dry etch plasma etches through the exposed GaN surface. Silica fragments act as nanoparticles, locally masking the underlying GaN. The etch rate is much reduced at these sites and consequently a rough topography develops. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) inspections show that random topographic features at the scale of a few tens of nanometres are formed. Optical measurements using angle-resolved photoluminescence show that GaN light-emitting diode material thus roughened has the capability to extract more light from within the epilayers.

  5. Design and Analysis of a 34 dBm Ka-Band GaN High Power Amplifier MMIC

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.

    2006-01-01

    This paper presents the design and analysis issues related to the use of recent GaN technologies for realizing high power millimeter wave MMICs. Two GaN Ka-band amplifier MMICs have been designed, fabricated and characterized. The small-signal and power measurement results are presented for both amp

  6. Improved crystalline quality of N-polar GaN epitaxial layers grown with reformed flow-rate-modulation technology

    Science.gov (United States)

    Zhang, Heng; Zhang, Xiong; Wang, Shuchang; Wang, Xiaolei; Zhao, Jianguo; Wu, Zili; Dai, Qian; Yang, Hongquan; Cui, Yiping

    2017-01-01

    A reformed flow-rate-modulation technology was developed for the metalorganic vapor phase epitaxy (MOVPE) growth of the N-polar GaN epitaxial layers. To improve the crystalline quality of the N-polar GaN epitaxial layers, a GaN nucleation layer was grown at relatively low temperature with carefully-controlled pulsed supply of Ga source and showed diverse morphology with atomic force microscope (AFM). Furthermore, the electrical and optical properties of the grown N-polar GaN epitaxial layers were investigated extensively by means of Hall effect, photoluminescence (PL), and X-ray rocking curve (XRC) measurements. The characterization results revealed that as compared with the N-polar GaN epitaxial layer grown over the conventional GaN nucleation layer which was deposited with continuous supply of both N and Ga sources, the electrical and optical properties of the N-polar GaN epitaxial layer grown with optimized supply of Ga source for the GaN nucleation layer were significantly improved.

  7. Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Castellazzi, Alberto; Iannuzzo, Francesco;

    2016-01-01

    In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contr...

  8. Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers

    NARCIS (Netherlands)

    Kamler, G.; Borysiuk, J.; Weyher, J.L.; Czernecki, R.; Leszczynski, M.; Grzegory, I.; Porowski, S.

    2005-01-01

    Two different etching techniques were used for the investigation of polarity inversion in the magnesium-doped MOVPE GaN layers deposited on GaN pressure grown substrates. Etching in KOH solution at 100 degrees C and in molten bases at 450 degrees C allowed us to determine precisely the regions of di

  9. Research on fabrication and application of nanodots on GaN substrate%GaN衬底上纳米点阵列的制备及其应用研究

    Institute of Scientific and Technical Information of China (English)

    王新中; 于广辉; 李世国

    2011-01-01

    This paper investigates nanomask application in gallium nitride epitaxy and device fabrication.The nanodots Ni and SiO2 were obtained by electro-chemical erode and e-beam evaporation. Nanocones were formed on Ni/GaN template using inductively coupled plasma system and the GaN crystal was overgrown on SiO2/GaN template by hydride vapor phase epitaxy (HVPE). It is indicated that SiO2 nanodots can obstruct from dislocations,which will obviously decrease the density of dislocation,and is propitious to the release of stress.%研究了纳米掩膜在材料外延生长及器件制备中的应用.通过电化学腐蚀和电子束蒸发方法在GaN表面生成Ni和SiO纳米点阵列,经过等离子体刻蚀在Ni/GaN模板上形成GaN纳米锥形结构;利用氢化物气相外延(HVPE)方法,在SiO/GaN模板上制备厚膜GaN材料.X射线衍射(XRD)和光致发光(PL)谱测试表明,SiO纳米点阵能有效阻挡衬底中位错往上延伸,大大降低外延层中位错密度,并有利于厚膜GaN中应力释放.

  10. DNA repair by RNA: Templated, or not templated, that is the question.

    Science.gov (United States)

    Meers, Chance; Keskin, Havva; Storici, Francesca

    2016-08-01

    Cells are continuously exposed to both endogenous and exogenous sources of genomic stress. To maintain chromosome stability, a variety of mechanisms have evolved to cope with the multitude of genetic abnormalities that can arise over the life of a cell. Still, failures to repair these lesions are the driving force of cancers and other degenerative disorders. DNA double-strand breaks (DSBs) are among the most toxic genetic lesions, inhibiting cell ability to replicate, and are sites of mutations and chromosomal rearrangements. DSB repair is known to proceed via two major mechanisms: homologous recombination (HR) and non-homologous end joining (NHEJ). HR reliance on the exchange of genetic information between two identical or nearly identical DNA molecules offers increased accuracy. While the preferred substrate for HR in mitotic cells is the sister chromatid, this is limited to the S and G2 phases of the cell cycle. However, abundant amounts of homologous genetic substrate may exist throughout the cell cycle in the form of RNA. Considered an uncommon occurrence, the direct transfer of information from RNA to DNA is thought to be limited to special circumstances. Studies have shown that RNA molecules reverse transcribed into cDNA can be incorporated into DNA at DSB sites via a non-templated mechanism by NHEJ or a templated mechanism by HR. In addition, synthetic RNA molecules can directly template the repair of DSBs in yeast and human cells via an HR mechanism. New work suggests that even endogenous transcript RNA can serve as a homologous template to repair a DSB in chromosomal DNA. In this perspective, we will review and discuss the recent advancements in DSB repair by RNA via non-templated and templated mechanisms. We will provide current findings, models and future challenges investigating RNA and its role in DSB repair.

  11. High pressure annealing of Europium implanted GaN

    KAUST Repository

    Lorenz, K.

    2012-02-09

    GaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  12. Optical Properties of GaN and ZnO

    Science.gov (United States)

    Song, J.-H.

    A brief review on the optical properties of wurtzite ZnO and GaN is presented in this chapter with an emphasis on comparison between the materials. The properties of free excitons and impurity-bound excitons, such as their energetic positions and binding energies, are summarized. The localization energy and the ionization energy of the dominant impurities obtained by emission spectroscopy are also presented. Typical aspects of emissions from donor—acceptor pairs, free-to-bound transition, and deep level recombination are discussed. Several experimental characteristics of the relevant heterostructures, InGaN/GaN and MgZnO/ZnO, are also given below. Basic optical methods characterizing the effects of internal electric fields and carrier-localization are summarized. The unique properties of polarization sensitive emissions from nonpolar films are presented. Based on the valence band structures, the polarization selection rules can be obtained in simpler forms. Some recent reports will also be introduced stating that the anisotropic strain in nonpolar films plays an important role in deciding the polarization selectivity. The results of Raman spectroscopy are summarized in the end, with the emphasis on deciding the residual strain and the carrier concentration.

  13. Photoluminescence of localized excitons in InGan quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Usov, S. O., E-mail: S.Usov@mail.ioffe.ru; Tsatsul' nikov, A. F.; Lundin, V. V.; Sakharov, A. V.; Zavarin, E. E.; Ledentsov, N. N. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2008-02-15

    Photoluminescence spectra of samples with ultrathin InGaN layers embedded in AlGaN and GaN matrices are studied experimentally in the temperature range of 80 to 300 K. It is shown that the temperature dependences can be understood in the context of Eliseev's model and that, in the active region of the structures under study, the dispersion {sigma} of the exciton-localization energy depends on the average In content in InGaN-alloy layers. Furthermore, the Urbach energy E{sub U}, which characterizes the localization energy of excitons in the tails of the density of states, was determined from an analysis of the shape of the low-energy slope of the spectrum. It is shown that {sigma} and E{sub U}, quantities representing the scale of the exciton-localization effects, vary linearly with the photoluminescence-peak wavelength in the range from the ultraviolet to the green region of the spectrum.

  14. AMIE Gan Island Ancillary Disdrometer Field Campaign Report

    Energy Technology Data Exchange (ETDEWEB)

    Oue, Mariko [Stony Brook Univ., NY (United States)

    2016-04-01

    As part of the U.S. Department of Energy (DOE)’s Atmospheric Radiation Measurement Climate Research Facility (ARM) Madden-Julian Oscillation (MJO) Investigation Experiment (AMIE), in January 2012 a disdrometer observation took place with the second ARM Mobile Facility (AMF2), the Scanning ARM Cloud Radar (SACR), the Texas A&M SMART-R C-band radar, and the National Center for Atmospheric Research (NCAR) dual wavelength S- and Ka-bands polarimetric (SPolKa) radar on Gan Island, Maldives. In order to measure raindrop size distributions, a disdrometer of Nagoya University, Japan, was set up close to the ARM Two-Dimensional (2D) Video Disdrometer (2DVD). The SMART-R and SPolKa radars performed range-height-indicator scanning in the direction of the disdrometer site. Comparing the disdrometer data with 2DVD data, the raindrop size distribution data will be calibrated. Furthermore, the analysis of the raindrop size distribution and radar data will be expected to clarify the microphysics in tropical convective clouds.

  15. High pressure luminescence studies of europium doped GaN

    Institute of Scientific and Technical Information of China (English)

    K.Wisniewski; W.Jadwisie(n)czak; T.Thomas; M.Spencer

    2009-01-01

    We reported on the high pressure luminescence spectra of polycrystalline Eu-doped GaN material synthesized in the reaction tween alloys of gallium,bismuth and europium in ammonia atmosphere.The integrated luminescence intensity of the dominant Eu3+ ion transition (5D0→7F2) at 622 nm increased approximately one order of magnitude whereas its spectral position and line width did not change significantly between ambient and 6.8 GPa pressure,respectively.Moreover,material was characterized with photo- and cathodo-luminescence,and photoluminescence excitation spectra at different temperatures.It was found that the Eu3+ ions occupying substitutional Ga site created different centers which could be effectively excited with above band gap excitation and from excitons resonantly photoexcited at the I2 bound exciton energy.Furthermore,the less efficient Eu3+ ions excitation path existed through intrinsic impurities and defects generating shallow energy levels in the forbidden gap.It was proposed that reduction of the thermal quenching and consequent enhancement of Eu3+ ion emission intensity resulted from stronger localization of bound exciton on RESI trap induced by applied pressure.

  16. Simulations of electron transport in GaN devices

    CERN Document Server

    Arabshahi, H

    2002-01-01

    model of a device with traps to investigate this suggestion. The model includes the simulation of the capture and release of electrons by traps whose charge has a direct effect on the current flowing through the transistor terminals. The influence of temperature and light on the occupancy of the traps and the I-V characteristics are considered. It is concluded that traps are likely to play a substantial role in the behaviour of GaN field effect transistors. Further simulations were performed to model electron transport in AIGaN/GaN heterojunction FETs. So called HFET structures with a 78 nm Al sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N pseudomorphically strained layer have been simulated, with the inclusion of spontaneous and piezoelectric polarization effects in the strained layer. The polarization effects are shown to not only increase the current density, but also improve the electron transport by inducing a higher electron density close to the positive charge sheet that occurs in the channel. This thesis de...

  17. Synthesis of GaN nanorods on Si substrates with assistance of the volatilization of ZnO middle layers

    Institute of Scientific and Technical Information of China (English)

    ZHUANG Huizhao; GAO Haiyong; XUE Chengshan; WANG Shuyun; DONG Zhihua; HE Jianting

    2005-01-01

    GaN nanorods have successfully been synthesized on Si(111) substrates via ammoniating ZnO/Ga2O3 films at 950℃. Ga2O3 thin films and ZnO middle layers were deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. ZnO volatilized at 950℃ in the ammonia ambience and Ga2O3 reacted to NH3 to fabricate GaN nanorods in the later ammoniating process. The volatilization of ZnO layers played an important role in the fabrication. The structure and composition of the GaN nanorods were studied by X-ray diffraction (XRD) and Fourier transform infrared spectrophotometer (FTIR). The morphology of GaN nanorods was investigated using scanning electron microscopy (SEM) and transmission electronic microscope (TEM). The analyses of measured results revealed that GaN nanorods with hexagonal wurtzite structure were prepared by this method.

  18. Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy

    Science.gov (United States)

    Dasgupta, Sansaptak; Nidhi; Wu, Feng; Speck, James S.; Mishra, Umesh K.

    2012-11-01

    Smooth N-polar GaN films were epitaxially grown by plasma assisted molecular beam epitaxy (PAMBE) on on-axis p-Si(111). The structural quality of the as-grown GaN films was further improved by insertion of AlGaN/GaN superlattice structures, resulting in reduced threading dislocation density and also efficient stress management in the GaN film to mitigate crack formation. The structural quality of these films was comparable to N-polar GaN grown on C-SiC by MBE. Convergent beam electron diffraction (CBED) imaging and KOH etch studies were performed to confirm the N-polarity of the sample. Room temperature photoluminescence measurements revealed strong GaN band-edge emission.

  19. Ear Authentication and Template Protection using Bio-key

    Directory of Open Access Journals (Sweden)

    K. Annapurani

    2014-09-01

    Full Text Available Biometric authentication is gaining popularity in the current scenario. Biometric based authentication is the science of using physical or behavioral characteristic for ensuring that the person is the claimed identity. Biometric authentication system is also vulnerable to attacks in various phases. The biometric data stored in the template has to be protected, since variety of attacks like circumvent, covert acquisition affects the normal functioning of the system. An attacker may create new biometric data or steal the template or modify the template. Once the biometric template is compromised then the entire system is lost. So securing biometric template is an important aspect in biometric authentication system. In this study ear biometric template is secured by a new method of generating bio key from the ear fused template. Here the transformed template is stored in the database. During verification phase, for the new biometric sample a bio key is generated. Using this bio key the person is authenticated if the transformed feature generated is matched with the stored one. Hence the template is protected with the bio key. The authenticated person alone can access the system, since the key to decrypt the encrypted template is obtained from the ear trait of the authenticated person. FAR and FRR are used to evaluate the system performance.

  20. Correlation of doping, structure, and carrier dynamics in a single GaN nanorod

    Science.gov (United States)

    Zhou, Xiang; Lu, Ming-Yen; Lu, Yu-Jung; Gwo, Shangjr; Gradečak, Silvija

    2013-06-01

    We report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was correlated to doping and structural defect in the nanorod, and used to determine p-n junction position and minority carrier diffusion lengths of 650 nm and 165 nm for electrons and holes, respectively. Temperature-dependent CL study reveals an activation energy of 19 meV for non-radiative recombination in Mg-doped GaN nanorods. These results directly correlate doping, structure, carrier dynamics, and optical properties of GaN nanostructure, and provide insights for device design and fabrication.

  1. On the phenomenon of large photoluminescence red shift in GaN nanoparticles

    KAUST Repository

    Ben Slimane, Ahmed

    2013-07-01

    We report on the observation of broad photoluminescence wavelength tunability from n-type gallium nitride nanoparticles (GaN NPs) fabricated using the ultraviolet metal-assisted electroless etching method. Transmission and scanning electron microscopy measurements performed on the nanoparticles revealed large size dispersion ranging from 10 to 100 nm. Nanoparticles with broad tunable emission wavelength from 362 to 440 nm have been achieved by exciting the samples using the excitation power-dependent method. We attribute this large wavelength tunability to the localized potential fluctuations present within the GaN matrix and to vacancy-related surface states. Our results show that GaN NPs fabricated using this technique are promising for tunable-color-temperature white light-emitting diode applications. © 2013 Slimane et al.; licensee Springer.

  2. Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

    Institute of Scientific and Technical Information of China (English)

    WANG Mao-Jun; SHEN Bo; XU Fu-Jun; WANG Yan; XU Jian; HUANG Sen; YANG Zhi-Jian; QIN Zhi-Xin; ZHANG Guo-Yi

    2007-01-01

    High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 50CPC. The increment of electron concentration from room temperature to 500°C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements (XRD). The buildup levels in persistent photoconductivity (PPC) are also shown to be directly proportional to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related.

  3. Measurement of the electrostatic edge effect in wurtzite GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Henning, Alex; Rosenwaks, Yossi [Department of Physical Electronics, School of Electrical Engineering, Tel-Aviv University, Ramat-Aviv 69978 (Israel); Klein, Benjamin [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Bertness, Kris A.; Blanchard, Paul T.; Sanford, Norman A. [NIST, Physical Measurement Laboratory, Division 686, 325 Broadway, Boulder, Colorado 80305 (United States)

    2014-11-24

    The electrostatic effect of the hexagonal corner on the electronic structure in wurtzite GaN nanowires (NWs) was directly measured using Kelvin probe force microscopy (KPFM). By correlating electrostatic simulations with the measured potential difference between the nanowire face and the hexagonal vertices, the surface state concentration and band bending of GaN NWs were estimated. The surface band bending is important for an efficient design of high electron mobility transistors and for opto-electronic devices based on GaN NWs. This methodology provides a way to extract NW parameters without making assumptions concerning the electron affinity. We are taking advantage of electrostatic modeling and the high precision that KPFM offers to circumvent a major source of uncertainty in determining the surface band bending.

  4. RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION

    Directory of Open Access Journals (Sweden)

    Dhiyauddin Ahmad Fauzi

    2017-05-01

    Full Text Available In addition to their useful optoelectronics functions, gallium nitride (GaN and quantum dots (QDs based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED and InAs/GaAs dot-in-a well (DWELL samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V and capacitance-voltage (C-V electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.

  5. Study of electrical properties of single GaN nanowires grown by molecular beam epitaxy

    Science.gov (United States)

    Mozharov, A. M.; Komissarenko, F. E.; Vasiliev, A. A.; Bolshakov, A. D.; Moiseev, E. I.; Mukhin, M. S.; Cirlin, G. E.; Mukhin, I. S.

    2016-08-01

    Electrical properties of single GaN nanowires grown by means of molecular beam epitaxy with N-plasma source were studied. Ohmic contacts connected to single n-type GaN wires were produced by the combination of electron beam lithography, metal vacuum evaporation and rapid thermal annealing technique. The optimal annealing temperature to produce ohmic contacts implemented in the form of Ti/Al/Ti/Au stack has been determined. By means of 2-terminal measurement wiring diagram the conductivity of single NW has been obtained for NWs with different growth parameters. The method of MESFET measurement circuit layout of single GaN nanowires (NWs) has been developed. In accordance with performed numerical calculation, free carriers' concentration and mobility of single NWs could be independently estimated using MESFET structure.

  6. Ammonothermal synthesis of GaN using Ba(NH2)2 as mineralizer

    Science.gov (United States)

    Hertrampf, J.; Alt, N. S. A.; Schlücker, E.; Knetzger, M.; Meissner, E.; Niewa, R.

    2016-12-01

    It is demonstrated that hexagonal GaN can be obtained under ammonothermal conditions (125 MPa and 723 K) using Ba(NH2)2 as mineralizer. The hexagonal wurtzite-type GaN crystallites are several μm in diameter, as examined by scanning electron microscopy. This is to our knowledge the first successful ammonothermal GaN synthesis using an alkaline-earth metal as mineralizer. Ba[Ga(NH2)4]2 was identified as intermediate species in the ammonothermal synthesis process. The formation of h-GaN using Sr(NH2)2 as mineralizer was indicated only at higher temperatures above 1000 K.

  7. Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

    Science.gov (United States)

    Bessolov, V.; Kalmykov, A.; Konenkova, E.; Kukushkin, S.; Myasoedov, A.; Poletaev, N.; Rodin, S.

    2017-01-01

    Hydride vapor phase epitaxy (HVPE) growth of semipolar AlN and GaN layers on planar Si(100) substrates with SiC nanolayer is investigated. It is shown experimentally that the solid-phase epitaxial formation of a specially oriented SiC nucleation layer followed by epitaxy of AlN layer by HVPE at low rates enables growth of aluminum and gallium nitrides in the semipolar direction. For the best GaN(20-23) layers obtained, the full width at half maximum (FWHM) value for the x-ray diffraction rocking curve is 24 arcmin. The photoluminescence spectrum of the semipolar GaN measured at 4 K exhibits bands related to basal-plane and prismatic stacking faults (BSF and PSF).

  8. The pyroelectric coefficient of free standing GaN grown by HVPE

    Science.gov (United States)

    Jachalke, Sven; Hofmann, Patrick; Leibiger, Gunnar; Habel, Frank S.; Mehner, Erik; Leisegang, Tilmann; Meyer, Dirk C.; Mikolajick, Thomas

    2016-10-01

    The present study reports on the temperature dependent pyroelectric coefficient of free-standing and strain-free gallium nitride (GaN) grown by hydride vapor phase epitaxy (HVPE). The Sharp-Garn method is applied to extract the pyroelectric coefficient from the electrical current response of the crystals subjected to a sinusoidal temperature excitation in a range of 0 °C to 160 °C. To avoid compensation of the pyroelectric response by an internal conductivity, insulating GaN crystals were used by applying C, Mn, and Fe doping during HVPE growth. The different pyroelectric coefficients observed at room temperature due to the doping correlate well with the change of the lattice parameter c. The obtained data are compared to previously published theoretical and experimental values of thin film GaN and discussed in terms of a strained lattice.

  9. A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

    Science.gov (United States)

    Lu, Y.; Zhao, B. C.; Zheng, J. X.; Zhang, H. S.; Zheng, X. F.; Ma, X. H.; Hao, Y.; Ma, P. J.

    2016-09-01

    In this paper, a high efficiency C-band gallium nitride (GaN) internally-matched power amplifier (PA) is presented. This amplifier consists of 2-chips of self-developed GaN high-electron mobility transistors (HEMTs) with 16 mm total gate width on SiC substrate. New harmonic manipulation circuits are induced both in the input and output matching networks for high efficiency matching at fundamental and 2nd-harmonic frequency, respectively. The developed amplifier has achieved 72.1% power added efficiency (PAE) with 107.4 W output power at 5 GHz. To the best of our knowledge, this amplifier exhibits the highest PAE in C-band GaN HEMT amplifiers with over 100 W output power. Additionally, 1000 hours' aging test reveals high reliability for practical applications.

  10. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    CERN Document Server

    Xiong, Chi; Ryu, Kevin K; Schuck, Carsten; Fong, King Y; Palacios, Tomas; Tang, Hong X

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of \\{chi}(2) enabled sum-/difference-frequency processes.

  11. Self-induced growth of vertical GaN nanowires on silica

    Science.gov (United States)

    Kumaresan, V.; Largeau, L.; Oehler, F.; Zhang, H.; Mauguin, O.; Glas, F.; Gogneau, N.; Tchernycheva, M.; Harmand, J.-C.

    2016-04-01

    We study the self-induced growth of GaN nanowires on silica. Although the amorphous structure of this substrate offers no possibility of an epitaxial relationship, the nanowires are remarkably aligned with the substrate normal whereas, as expected, their in-plane orientation is random. Their structural and optical characteristics are compared to those of GaN nanowires grown on standard crystalline Si (111) substrates. The polarity inversion domains are much less frequent, if not totally absent, in the nanowires grown on silica, which we find to be N-polar. This work demonstrates that high-quality vertical GaN nanowires can be elaborated without resorting to bulk crystalline substrates.

  12. Investigation of HCl-based surface treatment for GaN devices

    Energy Technology Data Exchange (ETDEWEB)

    Okada, Hiroshi, E-mail: okada@ee.tut.ac.jp [Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan); Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan); Shinohara, Masatohi; Kondo, Yutaka; Sekiguchi, Hiroto; Yamane, Keisuke [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan); Wakahara, Akihiro [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan); Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan)

    2016-02-01

    Surface treatments of GaN in HCl-based solutions are studied by X-ray photoelectron spectroscopy (XPS) and electrical characterization of fabricated GaN surfaces. A dilute-HCl treatment (HCl:H{sub 2}O=1:1) at room temperature and a boiled-HCl treatment (undiluted HCl) at 108°C are made on high-temperature annealed n-GaN. From the XPS study, removal of surface oxide by the dilute-HCl treatment was found, and more thoroughly oxide-removal was confirmed in the boiled-HCl treatment. Effect of the surface treatment on electrical characteristics on AlGaN/GaN transistor is also studied by applying treatment processes prior to the surface SiN deposition. Increase of drain current is found in boiled-HCl treated samples. The results suggest that the boiled-HCl treatment is effective for GaN device fabrication.

  13. Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths

    Science.gov (United States)

    Pardo, D.; Grajal, J.

    2015-11-01

    This work presents an analysis of the capabilities of GaN Schottky diodes for frequency multipliers and mixers at millimeter wavelengths. By using a Monte Carlo (MC) model of the diode coupled to a harmonic balance technique, the electrical and noise performances of these circuits are investigated. Despite the lower electron mobility of GaN compared to GaAs, multipliers based on GaN Schottky diodes can be competitive in the first stages of multiplier chains, due to the excellent power handling capabilities of this material. The performance of these circuits can be improved by taking advantage of the lateral Schottky diode structures based on AlGaN/GaN HEMT technology.

  14. Nonresonant tunneling phonon depopulated GaN based terahertz quantum cascade structures

    Science.gov (United States)

    Freeman, Will; Karunasiri, Gamani

    2013-04-01

    GaN based terahertz quantum cascade structures are theoretically studied. Since the Fröhlich interaction is ˜15 times higher in GaN than in GaAs, level broadening makes obtaining appreciable optical gain difficult even with a large population inversion. A density matrix Monte Carlo method is used to calculate the broadening of the optical gain spectra as a function of lattice temperature. We find by using a proposed method of nonresonant tunneling and electron-longitudinal-optical phonon scattering for depopulation of the lower lasing state, that it is possible to sufficiently isolate the upper lasing state and control the lower lasing state lifetime to obtain high optical gain in GaN. The results predict lasing out to 300 K which is significantly higher than for GaAs based structures.

  15. Visualization of GaN surface potential using terahertz emission enhanced by local defects

    Science.gov (United States)

    Sakai, Yuji; Kawayama, Iwao; Nakanishi, Hidetoshi; Tonouchi, Masayoshi

    2015-09-01

    Wide-gap semiconductors have received significant attention for their advantages over existing semiconductors in energy-efficient power devices. To realize stable and reliable wide-gap semiconductor devices, the basic physical properties, such as the electric properties on the surface and at the interface, should be revealed. Here, we report visualization of terahertz (THz) emission from the surface of GaN, which is excited by ultraviolet femtosecond laser pulses. We found that the THz emission is enhanced by defects related to yellow luminescence, and this phenomenon is explained through the modification of band structures in the surface depletion layer owing to trapped electrons at defect sites. Our results demonstrate that the surface potential in a GaN surface could be detected by laser-induced THz emission. Moreover, this method enables feasible evaluation of the distribution of non-radiative defects, which are undetectable with photoluminescence, and it contributes to the realization normally-off GaN devices.

  16. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    Science.gov (United States)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  17. LASER LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATES

    Institute of Scientific and Technical Information of China (English)

    J. Xu; R. Zhang; Y.P. Wang; X.Q. Xiu; S.L. Gu; B. Shen; Y. Shi; Z.G. Liu; Y.D. Zheng

    2001-01-01

    Gallium Nitride film was successfully separated from sapphire substrate by laser radi-ation. The absorption of the 248nm radiation by the GaN at the interface results inrapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas.The substrate can be easily removed by heating above the Ga melting point (29℃).X-ray diffraction, atomic force microscopy and Photoluminescence of GaN before andafter lift-off process have been performed, which demonstrated that the separation andtransfer process do not alter the structural quality of the GaN films. And further dis-cussions on the threshold energy and crack-free strategies of laser lift-off process havealso been presented.

  18. High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN

    DEFF Research Database (Denmark)

    Jorgensen, J.E.; Jakobsen, J.M.; Jiang, Jianzhong;

    2003-01-01

    Bulk- and nanocrystalline GaN have been studied by high-pressure energy-dispersive X-ray diffraction. Pressure-induced structural phase transitions from the wurtzite to the NaCl phase were observed in both materials. The transition pressure was found to be 40 GPa for the bulk-crystalline GaN, while...... the wurtzite phase was retained up to 60 GPa in the case of nanocrystalline GaN. The bulk moduli for the wurtzite phases were determined to be 187 ( 7) and 319 ( 10) GPa for the bulk- and nanocrystalline phases, respectively, while the respective NaCl phases were found to have very similar bulk moduli [ 208...

  19. A low cost, green method to synthesize GaN nanowires

    Science.gov (United States)

    Zhao, Jun-Wei; Zhang, Yue-Fei; Li, Yong-He; Su, Chao-Hua; Song, Xue-Mei; Yan, Hui; Wang, Ru-Zhi

    2015-12-01

    The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 μm, with a maximum diameter about 140 nm. The morphology and quantity of the nanowires can be modulated by the growth substrate and process parameters. In addition, the photoluminescence and field emission properties of the prepared GaN nanowires have been investigated, which were found to be largely affected by their structures. This work renders an environmentally benign strategy and a facile approach for controllable structures on nanodevice.

  20. Controlling the morphology of GaN layers grown on AlN in Ga self-surfactant conditions: from quantum wells to quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Adelmann, C.; Daudin, B.; Monroy, E.; Sarigiannidou, E.; Rouviere, J.L.; Hori, Y.; Brault, J.; Gogneau, N. [Departement de Recherche Fondamentale sur la Matiere Condensee, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9 (France); Fanget, S.; Bru-Chevallier, C. [Laboratoire de Physique de la Matiere - CNRS (UMR5511), INSA de Lyon, Batiment Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2002-12-01

    We show that the growth mode of GaN deposited by plasma-assisted molecular beam epitaxy on AlN can be controlled by tuning Ga/N ratio. This enables to grow either quantum dots (Ga/N<1) or quantum wells (Ga/N>>1). The inhibition of 2D/3D transition results from a decrease in effective mismatch induced by the presence of a continuous Ga film on growing GaN surface in Ga-rich conditions. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  1. A survey on GaN- based devices for terahertz photonics

    Science.gov (United States)

    Ahi, Kiarash; Anwar, Mehdi

    2016-09-01

    With fast growing of the photonics and power electronic systems, the need for high power- high frequency semiconductor devices is sensed tremendously. GaN provides the highest electron saturation velocity, breakdown voltage and operation temperature, and thus combined frequency-power performance among commonly used semiconductors. With achieving the first THz image in just two decades ago, generation and detection of terahertz (THz) radiation is one of the most emerging photonic areas. The industrial needs for compact, economical, high resolution and high power THz imaging and spectroscopy systems are fueling the utilization of GaN for the realizing of the next generation of THz systems. As it is reviewed in this paper, the mentioned characteristics of GaN together with its capabilities of providing high 2-dimentional election densities and large longitudinal-optical phonon of 90 meV, make it one of the most promising semiconductor materials for the future of the THz generation, detection, mixing, and frequency multiplication. GaN- based devices have shown capabilities of operating in the upper THz frequency band of 5- 12 THz with relatively high photon densities and in room temperature. As a result, THz imaging and spectroscopy systems with high resolutions and depths of penetrations can be realized via utilizing GaN- based devices. In this paper, a comprehensive review on the history and state of the art of the GaN- based electronic devices, including plasma HFETs, NDRs, HDSDs, IMPATTs, QCLs, HEMTs, Gunn diodes and TeraFETs together with their impact on the future of THz imaging and spectroscopy systems is provided.

  2. Rank-based decompositions of morphological templates.

    Science.gov (United States)

    Sussner, P; Ritter, G X

    2000-01-01

    Methods for matrix decomposition have found numerous applications in image processing, in particular for the problem of template decomposition. Since existing matrix decomposition techniques are mainly concerned with the linear domain, we consider it timely to investigate matrix decomposition techniques in the nonlinear domain with applications in image processing. The mathematical basis for these investigations is the new theory of rank within minimax algebra. Thus far, only minimax decompositions of rank 1 and rank 2 matrices into outer product expansions are known to the image processing community. We derive a heuristic algorithm for the decomposition of matrices having arbitrary rank.

  3. The Contextualization of Archetypes: Clinical Template Governance.

    Science.gov (United States)

    Pedersen, Rune; Ulriksen, Gro-Hilde; Ellingsen, Gunnar

    2015-01-01

    This paper is a status report from a large-scale openEHR-based EPR project from the North Norway Regional Health Authority. It concerns the standardization of a regional ICT portfolio and the ongoing development of a new process oriented EPR systems encouraged by the unfolding of a national repository for openEHR archetypes. Subject of interest; the contextualization of clinical templates is governed over multiple national boundaries which is complex due to the dependency of clinical resources. From the outset of this, we are interested in how local, regional, and national organizers maneuver to standardize while applying OpenEHR technology.

  4. Progress of UV-NIL template making

    Science.gov (United States)

    Hiraka, Takaaki; Mizuochi, Jun; Nakanishi, Yuko; Yusa, Satoshi; Sasaki, Shiho; Morikawa, Yasutaka; Mohri, Hiroshi; Hayashi, Naoya

    2009-04-01

    Nano-imprint lithography (NIL) has been counted as one of the lithography candidates for hp32nm node and beyond and has showed excellent resolution capability with remarkable low line edge roughness that is attracting many researchers in the industry who were searching for the finest patterning technology. Therefore, recently we have been focusing on the resolution improvement on the NIL templates with the 100keV acceleration voltage spot beam (SB) EB writer and the 50keV acceleration voltage variable shaped beam (VSB) EB writer. The 100keV SB writers have high resolution capability, but they show fatally low throughput if we need full chip writing. Usually templates for resolution pioneers needed just a small field (several hundred microns square or so), but recently requirements for full chip templates are increasing. For full chip writing, we have also started the resolution improvement with the 50keV VSB writers used in current 4X photomask manufacturing. The 50keV VSB writers could generate full chip pattern in a reasonable time though resolution limits are inferior to that with the 100keV SB writers. In this paper, we will show latest results with both the 100keV SB and the 50keV VSB EB writers. With the 100keV SB EB writer, we have achieved down to hp15nm resolution for line and space pattern, but found that to achieve further improvement, an innovation in pattern generation method or material would be inevitable. With the 50keV VSB EB writer, we have achieved down to hp22nm resolution for line and space pattern. Though NIL has excellent resolution capability, solutions for defect inspection and repair are not clearly shown yet. In this paper, we will show preliminary inspection results with an EB inspection tool. We tested an EB inspection tool by Hermes Microvision, Inc. (HMI), which was originally developed for and are currently used as a wafer inspection tool, and now have been started to seek the application for mask use, using a programmed defect

  5. Template-directed porous electrodes in electroanalysis.

    Science.gov (United States)

    Walcarius, Alain

    2010-01-01

    Nano- and/or macrostructuring of electrode surfaces has recently emerged as a powerful method of improving the performances of electrochemical devices by enhancing both molecular accessibility and rapid mass transport via diffusion, by increasing the electroactive surface area in comparison to the geometric one, and/or by providing confinement platforms for hosting suitable reagents. This brief overview highlights how template technology offers advantages in terms of designing new types of porous electrodes-mostly based on thin films, and functionalized or not-and discusses their use in analytical chemistry via some recent examples from the literature on electrochemical sensors and biosensors.

  6. Structural features in GaN grown on a Ge(111) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Y.; McAleese, C.; Xiu, H.; Humphreys, C.J. [Department of Materials Science and Metallurgy, University of Cambridge (United Kingdom); Lieten, R.R.; Degroote, S.; Borghs, G. [Interuniversity Microelectronics Center, Leuven (Belgium)

    2008-07-01

    Using electron microscopy, structural characterisation has been carried out on a GaN epilayer grown directly on a Ge(111) substrate using plasma assisted molecular beam epitaxy (PAMBE) without any intermediate buffer layers. It was determined that a defect with a triangular shape, initially observed with optical microscopy, is essentially a faceted void in the Ge extending from the interface into the substrate. Both hexagonal and cubic phase GaN were observed in the epilayer which may be due to temperature variation during growth. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching

    Science.gov (United States)

    Tiginyanu, I. M.; Ursaki, V. V.; Zalamai, V. V.; Langa, S.; Hubbard, S.; Pavlidis, D.; Föll, H.

    2003-08-01

    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence spectroscopy characterization shows that the as-grown bulk GaN layers suffer from compressive biaxial strain of 0.5 GPa. The majority of nanocolumns are fully relaxed from strain, and the room-temperature luminescence is free excitonic. The high quality of the columnar nanostructures evidenced by the enhanced intensity of the exciton luminescence and by the decrease of the yellow luminescence is explained by the peculiarities of the anodic etching processing.

  8. Determination of satellite valley position in GaN emitter from photoexcited field emission investigations

    Science.gov (United States)

    Semenenko, M.; Yilmazoglu, O.; Hartnagel, H. L.; Pavlidis, D.

    2011-01-01

    Argon plasma etched GaN field-emitter rods with nanometer-scale diameter were fabricated on GaN grown on an n+-GaN substrate. Their electron field emission properties were investigated both without and under illumination by using light sources with various wavelengths. The Fowler-Nordheim current-voltage characteristics of the cathodes show a change in slope for illuminated cathodes. The electron affinity difference ΔE between the different valleys in the conduction band has been ascertained and is in the range from 1.18 up to 1.21 eV.

  9. Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers.

    Science.gov (United States)

    Henneghien, Anne-Line; Tourbot, Gabriel; Daudin, Bruno; Lartigue, Olivier; Désières, Yohan; Gérard, Jean-Michel

    2011-01-17

    The use of nanowires as active medium seems very promising for the development of high brightness LEDs. With a lower effective refractive index than bulk, semiconductor nanowire layers may lead to a high light extraction efficiency. We hereafter discuss the anisotropic properties of dense arrays of molecular beam epitaxy (MBE) grown gallium nitride (GaN) nanowires and the consequences on the optical design of nanowire based LEDs. In particular we show numerically that light extraction efficiency as high as 72% can be expected for GaN nanowires layer grown on a low cost Si substrate.

  10. Extraction of absorption coefficients from GaN nanowires grown on opaque substrates

    CERN Document Server

    Jayaprakash, Rahul; Germanis, Savvas; Androulidaki, Maria; Tsagaraki, Katerina; Georgakilas, Alexandros; Pelekanos, Nikos T

    2014-01-01

    We demonstrate a new method to measure absorption coefficients in any family of nanowires, provided they are grown on a substrate having considerable difference in permittivity with the nanowire-air matrix. In the case of high crystal quality, strain-free GaN nanowires, grown on Si (111) substrates with a density of ~1010 cm-2, the extracted absorption coefficients do not exhibit any enhancement compared to bulk GaN values, unlike relevant claims in the literature. This may be attributed to the relatively small diameters, short heights, and high densities of our nanowire arrays.

  11. A forgotten Ottoman composer: Ali Şîrûganî Dede

    Directory of Open Access Journals (Sweden)

    M. Emin Soydaş

    2007-10-01

    Full Text Available Although being one of the major composers of religious music in the Ottoman era, Ali Şîrûganî Dede, who was famous throughout his life as well as afterwards, is not known nowadays much well as he deserves. In this article Ali Şîrûganî Dede is introduced and information is given on his musicianship and his works, while his situation in the history of Ottoman music is pointed out and especially his importance with regard to religious music is emphasized. Some new information about the subject is also presented within this work.

  12. Characterization of an Mg-implanted GaN p-i-n Diode

    Science.gov (United States)

    2016-03-31

    The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for...future power electronic devices. Keywords: GaN, p-i-n diode, ion implantation Introduction III-nitride materials have attracted a continuous interest...implantation to a concentration of 2x1019 cm-3 following a box profile to a depth of 500nm. A photoresist mask was used for the implantation, aligned to

  13. GaN ultraviolet detector based demonstrator board for UV-index monitoring

    Science.gov (United States)

    Song, Man; Xie, Feng; Wang, Jun; Wang, Tanglin; Guo, Jin

    2015-04-01

    Currently, various types of III nitride-based materials have been successfully used for short-wavelength optoelectronic devices. The GaN ultraviolet detector has been wildly used for UV-Index(UVI) monitoring, UV curing and water disinfection. The global solar UVI describes the levels of solar UV radiation at the Earth's surface. The higher the UVI value, the greater the potential damage to the skin and eyes. The UVI monitoring demonstrator board with GaN detector is briefly introduced in this paper.

  14. Nucleation and Growth of GaN on GaAs (001) Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

    1999-05-03

    The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

  15. Investigation of structural and optical properties of GaN on flat and porous silicon

    Science.gov (United States)

    Abud, Saleh H.; Selman, Abbas M.; Hassan, Z.

    2016-09-01

    In this work, gallium nitride (GaN) layers were successfully grown on Flat-Si and porous silicon (PSi) using a radio frequency-magnetron sputtering system. Field emission scanning electron microscopy and atomic force microscopy images showed that the grown film on Flat-Si had smoother surface, even though there were some cracks on it. Furthermore, the X-ray diffraction measurements showed that the peak intensity of all the grown layers on PSi was higher than that of the grown layer on Flat-Si. Our detailed observation showed that PSi is a promising substrate to obtain GaN films.

  16. Molecular dynamics study of defect formation in GaN cascades

    CERN Document Server

    Nord, J D; Keinonen, J; Albe, K

    2003-01-01

    Simulations of irradiation effects in compound semiconductors require interatomic potentials which describe not only the compound phases, but also the pure constituents and defects. We discuss a systematic approach based on the analytic bond-order scheme for constructing such potentials and give an example for GaN. Finally, this potential is employed for simulations of defect formation in GaN by ion irradiation for recoils in the 200 eV to 10 keV energy range. Results on the total damage production are presented and compared with other semiconductors and experiments.

  17. The use of doping spikes in GaN Gunn diodes

    Science.gov (United States)

    Macpherson, R. F.; Dunn, G. M.

    2008-08-01

    The possibility of circumventing the difficulties of fine doping control in GaN Gunn diode devices by the substitution of a fully depleted p-type doping spike for the doping notch used to promote domain formation is explored using a Monte Carlo model. The p-type doping spike is a commonly used structure, but its potential use in GaN has not been previously evaluated. The results for a functional doping spike are compared, favorably, to those for a physically reasonable doping notch.

  18. Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors

    Science.gov (United States)

    Dasgupta, Sansaptak; Lu, Jing; Nidhi; Raman, Ajay; Hurni, Christophe; Gupta, Geetak; Speck, James S.; Mishra, Umesh K.

    2013-03-01

    In this paper, we report for the first time an estimation of hot electron relaxation time in GaN using electrical measurements. Hot electron transistors (HETs) with GaN as the base layer and different base-emitter barrier-height configurations and base thicknesses were fabricated. Common-base measurements were performed to extract the differential transfer ratio, and an exponential decay of the transfer ratio with increasing base thickness was observed. A hot electron mean free path was extracted from the corresponding exponential fitting and a relaxation time was computed, which, for low energy injection, matched well with theoretically predicted relaxation times based on longitudinal optical (LO) phonon scattering.

  19. Simulation of optimum parameters for GaN MSM UV photodetector

    Science.gov (United States)

    Alhelfi, Mohanad A.; Ahmed, Naser M.; Hashim, M. R.; Al-Rawi, Ali Amer; Hassan, Z.

    2016-07-01

    In this study the optimum parameters of GaN M-S-M photodetector are discussed. The evaluation of the photodetector depends on many parameters, the most of the important parameters the quality of the GaN film and others depend on the geometry of the interdigited electrode. In this simulation work using MATLAB software with consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode spacings (S) and widths (W) reveals conclusive results in device design. The optimum interelectrode design for interdigitated MSM-PD has been specified and evaluated by effect on quantum efficiency and responsivity.

  20. Structural properties of undoped and doped cubic GaN grown on SiC(001)

    OpenAIRE

    Martínez-Guerrero, Esteban; Bellet-Amalric, E.; Martinet, L.; Feuillet, G.; Daudin, B.

    2002-01-01

    Transmission electron microscopy and x-ray diffraction measurements reveal the presence of stacking faults ~SFs! in undoped cubic GaN thin layers. We demonstrate the importance of the defects in the interfacial region of the films by showing that the SFs act as nucleation sites for precipitates of residual impurities such as C and Si present in the GaN layers grown on SiC~001! substrates. We used the imaging secondary ion mass spectroscopy technique to locate these impurities. The systemat...

  1. Observers change their target template based on expected context.

    Science.gov (United States)

    Bravo, Mary J; Farid, Hany

    2016-04-01

    Previous studies have shown that when observers search repeatedly for a target in a particular context, they may develop a target template that is biased for that context. Because the same target may appear in multiple contexts, we wondered whether observers are able to develop multiple templates for the same target, with each template biased for a particular context. In a series of behavioral experiments, we show that observers can learn multiple target templates for a single target and that they can voluntarily switch among these templates depending on the context they expect to see. Our results suggest that these biased templates may coexist with an unbiased representation of the target, provided they are learned first.

  2. A New Vectorization Technique for Expression Templates in C++

    CERN Document Server

    Progsch, J; Adelmann, A

    2011-01-01

    Vector operations play an important role in high performance computing and are typically provided by highly optimized libraries that implement the BLAS (Basic Linear Algebra Subprograms) interface. In C++ templates and operator overloading allow the implementation of these vector operations as expression templates which construct custom loops at compile time and providing a more abstract interface. Unfortunately existing expression template libraries lack the performance of fast BLAS(Basic Linear Algebra Subprograms) implementations. This paper presents a new approach - Statically Accelerated Loop Templates (SALT) - to close this performance gap by combining expression templates with an aggressive loop unrolling technique. Benchmarks were conducted using the Intel C++ compiler and GNU Compiler Collection to assess the performance of our library relative to Intel's Math Kernel Library as well as the Eigen template library. The results show that the approach is able to provide optimization comparable to the fas...

  3. Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

    Science.gov (United States)

    2010-05-17

    properties of AlGaN/ GaN HEMTs grown on SiC sub- strates [11,15], and that these effects may vary with the proximity of the doped layer to the two...properties of Al- GaN / GaN HEMTs grown by rf-MBE on native GaN substrates. 2. Experimental Seven AlGaN/ GaN heterostructures were grown by rf-plasma assisted...buffer needs to include Be-doped GaN isolation layers in MBE-grown AlGaN/ GaN HEMTs and must be separated from the 2DEG by 200 nm to 500 nm. Acknowledgments

  4. A nanocluster beacon based on the template transformation of DNA-templated silver nanoclusters.

    Science.gov (United States)

    Teng, Ye; Jia, Xiaofang; Zhang, Shan; Zhu, Jinbo; Wang, Erkang

    2016-01-28

    In this work, we developed a novel light-up nanocluster beacon (NCB) based on shuttling dark silver nanoclusters (NCs) to a bright scaffold through hybridization. The fluorescence enhancement was as high as 70-fold when the two templates were on the opposite sides of the duplexes, enabling sensitive and selective detection of DNA.

  5. Silicon template preparation for the fabrication of thin patterned gold films via template stripping

    Science.gov (United States)

    Schmidl, G.; Dellith, J.; Dellith, A.; Teller, N.; Zopf, D.; Li, G.; Dathe, A.; Mayer, G.; Hübner, U.; Zeisberger, M.; Stranik, O.; Fritzsche, W.

    2015-12-01

    Metallic nanostructures play an important role in the vast field of modern nanophotonics, which ranges from the life sciences to biomedicine and beyond. Gold is a commonly-used and attractive material for plasmonics in the visible wavelength range, most importantly due to its chemical stability. In the present work, we focused on the different methods of plasmonic nanostructure fabrication that possess the greatest potential for cost-efficient fabrication. Initially, reusable (1 0 0) silicon templates were prepared. For this purpose, three different lithography methods (i.e. e-beam, optical, and nanoparticle lithography) were used that correspond to the desired structural scales. The application of a subsequent anisotropic crystal orientation-dependent wet etching process produced well-defined pyramidal structures in a wide variety of sizes, ranging from several microns to less than 100 nm. Finally, a 200 nm-thick gold layer was deposited by means of confocal sputtering on the silicon templates and stripped in order to obtain gold films that feature a surface replica of the initial template structure. The surface roughness that was achieved on the stripped films corresponds well with the roughness of the template used. This makes it possible to prepare cost-efficient high-quality structured films in large quantities with little effort. The gold films produced were thoroughly characterized, particularly with respect to their plasmonic response.

  6. Novel encoding methods for DNA-templated chemical libraries.

    Science.gov (United States)

    Li, Gang; Zheng, Wenlu; Liu, Ying; Li, Xiaoyu

    2015-06-01

    Among various types of DNA-encoded chemical libraries, DNA-templated library takes advantage of the sequence-specificity of DNA hybridization, enabling not only highly effective DNA-templated chemical reactions, but also high fidelity in library encoding. This brief review summarizes recent advances that have been made on the encoding strategies for DNA-templated libraries, and it also highlights their respective advantages and limitations for the preparation of DNA-encoded libraries.

  7. Structural analysis of GaN using high-resolution X-ray diffraction at variable temperatures; Analyse struktureller Eigenschaften von GaN mittels hochaufloesender Roentgenbeugung bei variabler Messtemperatur

    Energy Technology Data Exchange (ETDEWEB)

    Roder, C.

    2007-02-26

    The main topic of this thesis was the study of stress phenomena in GaN layers by application of high-resolution X-ray diffractometry at variable measurement temperature. For this a broad spectrum of different GaN samples was studied, which extended from bulk GaN crystals as well as thick c-plane oriented HVPE-GaN layers on c-plane sapphire over laterlaly overgrown c-plane GaN Layers on Si(111) substrates toon-polar a-plnae GaN layers on r-plane sapphire. The main topic of the measurements was the determination of the lattice parameters. Supplementarily the curvature of the waver as well as the excitonic resosance energies were studied by means of photoluminescence respectively photoreflection spectroscopy. By the measurement of the temperature-dependent lattice parameters of different GaN bulk crystals for the first time a closed set of thermal-expansion coefficients of GaN was determined from 12 to 1205 K with large accuracy. Analoguously the thermal-expansion coefficents of the substrate material sapphire were determinde over a temperature range from 10 to 1166 K.

  8. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2014-08-01

    GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

  9. Biocompatibility of Soft-Templated Mesoporous Carbons

    Energy Technology Data Exchange (ETDEWEB)

    Gencoglu, Maria F. [Michigan Technological Univ., Houghton, MI (United States). Dept. of Chemical Engineering; Spurri, Amanda [Widener Univ., Chester, PA (United States). Dept. of Chemical Engineering; Franko, Mitchell [Widener Univ., Chester, PA (United States). Dept. of Chemical Engineering; Chen, Jihua [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Hensley, Dale K. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Heldt, Caryn L. [Michigan Technological Univ., Houghton, MI (United States). Dept. of Chemical Engineering; Saha, Dipendu [Widener Univ., Chester, PA (United States). Dept. of Chemical Engineering

    2014-08-21

    We report that soft-templated mesoporous carbon is morphologically a non-nano type of carbon. It is a relatively newer variety of biomaterial, which has already demonstrated its successful role in drug delivery applications. To investigate the toxicity and biocompatibility, we introduced three types of mesoporous carbons with varying synthesis conditions and pore textural properties. We compared the Brunauer–Emmett–Teller (BET) surface area and pore width and performed cytotoxicity experiments with HeLa cells, cell viability studies with fibroblast cells and hemocomapatibility studies. Cytotoxicity tests reveal that two of the carbons are not cytotoxic, with cell survival over 90%. The mesoporous carbon with the highest surface area showed slight toxicity (~70% cell survival) at the highest carbon concentration of 500 μg/mL. Fibroblast cell viability assays suggested high and constant viability of over 98% after 3 days with no apparent relation with materials property and good visible cell-carbon compatibility. No hemolysis (<1%) was confirmed for all the carbon materials. Protein adsorption experiments with bovine serum albumin (BSA) and fibrinogen revealed a lower protein binding capacity of 0.2–0.6 mg/m2 and 2–4 mg/m2 for BSA and fibrinogen, respectively, with lower binding associated with an increase in surface area. The results of this study confirm the biocompatibility of soft-templated mesoporous carbons.

  10. Roles of Ⅴ/Ⅲ ratio and mixture degree in GaN growth: CFD and MD simulation study

    Institute of Scientific and Technical Information of China (English)

    Zhou An; Xiu Xiang-Qian; Zhang Rong; Xie Zi-Li; Hua Xue-Mei; Liu Bin; Han Ping

    2013-01-01

    To understand the mechanism of Gallium nitride (GaN) film growth is of great importance for their potential applications.In this paper,we investigate the growth behavior of the GaN film by combining computational fluid dynamics (CFD) and molecular dynamics (MD) simulations.Both of the simulations show that Ⅴ/Ⅲ mixture degree can have important impacts on the deposition behavior,and it is found that the more uniform the mixture is,the better the growth is.Besides,by using MD simulations,we illustrate the whole process of the GaN growth.Furthermore,we also find that the Ⅴ/Ⅲ ratio can affect the final roughness of the GaN film.When the Ⅴ/Ⅲ ratio is high,the surface of final GaN film is smooth.The present study provides insights into GaN growth from the macroscopic and microscopic views,which may provide some suggestions on better experimental GaN preparation.

  11. Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ansah-Antwi, KwaDwo Konadu, E-mail: kakadee@gmail.com; Chua, Soo Jin [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis # 08-03, Singapore 138634 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, E4-5-45, 4 Engineering Drive 3, Singapore 117576 (Singapore); Soh, Chew Beng [Singapore Institute of Technology, 10 Dover Drive, Singapore 138683 (Singapore); Liu, Hongfei [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis # 08-03, Singapore 138634 (Singapore)

    2015-11-15

    The four nearest Si(111) multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si(111) facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holes resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.

  12. A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation

    Science.gov (United States)

    Park, Byung-Guon; Lee, Sang-Tae; Reddeppa, Maddaka; Kim, Moon-Deock; Oh, Jae-Eung; Lee, Sang-Kwon

    2017-09-01

    In this paper we account for the physics behind the exciton peak shift in GaN nanorods (NRs) due to hydrogenation. GaN NRs were selectively grown on a patterned Ti/Si(111) substrate using plasma-assisted molecular beam epitaxy, and the effect of hydrogenation on their optical properties was investigated in detail using low-temperature photoluminescence measurements. Due to hydrogenation, the emissions corresponding to the donor-acceptor pair and yellow luminescence in GaN NRs were strongly suppressed, while the emission corresponding to the neutral to donor bound exciton (D0X) exhibited red-shift. Thermal annealing of hydrogenated GaN NRs demonstrated the recovery of the D0X and deep level emission. To determine the nature of the D0X peak shift due to hydrogenation, comparative studies were carried out on various diameters of GaN NRs, which can be controlled by different growth conditions and wet-etching times. Our experimental results reveal that the D0X shift depends on the diameter of the GaN NRs after hydrogenation. The results clearly demonstrate that the hydrogenation leads to band bending of GaN NRs as compensated by hydrogen ions, which causes a red-shift in the D0X emission.

  13. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University (Japan)

    2015-06-15

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. The photocatalytic properties of hollow (GaN)1-x(ZnO)x composite nanofibers synthesized by electrospinning

    Science.gov (United States)

    Wang, Ding; Zhang, Minglu; Zhuang, Huaijuan; Chen, Xu; Wang, Xianying; Zheng, Xuejun; Yang, Junhe

    2017-02-01

    (GaN)1-x(ZnO)x composite nanofibers with hollow structure were prepared by initial electrospinning, and the subsequent calcination and nitridation. The structure and morphology characteristics of samples were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). The characterization results showed the phase transition from ZnGa2O4 to (GaN)1-x(ZnO)x solid-solution under ammonia atmosphere. The preparation conditions were explored and the optimum nitridation temperature and holding time are 750 °C and 2 h, respectively. The photocatalytic properties of (GaN)1-x(ZnO)x with different Ga:Zn atomic ratios were investigated by degrading Rhodamine B under the visible light irradiation. The photocatalytic activity sequence is (GaN)1-x(ZnO)x (Ga:Zn = 1:2) > (GaN)1-x(ZnO)x (Ga:Zn = 1:3) > ZnO nanofibers > (GaN)1-x(ZnO)x (Ga:Zn = 1:4) > (GaN)1-x(ZnO)x (Ga:Zn = 1:1). The photocatalytic mechanism of the (GaN)1-x(ZnO)x hollow nanofibers was further studied by UV-vis diffuse reflectance spectra. The excellent photocatalytic performance of (GaN)1-x(ZnO)x hollow nanofibers was attributed to the narrow band gap and high surface area of porous nanofibers with hollow structure.

  15. Structural and optical properties of ZnO nanorods grown chemically on sputtered GaN buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Nandi, R.; Joshi, Pranav [Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Singh, Devendra; Mohanta, Pravanshu [Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Srinivasa, R.S. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Major, S.S., E-mail: syed@iitb.ac.in [Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2014-03-31

    ZnO nanorods were grown on 200 nm thick sputtered ZnO and GaN buffer layers on quartz substrates by chemical bath deposition. Field emission scanning electron microscopy and X-ray diffraction studies show that the ZnO nanorods on GaN buffer layer possess larger diameter and smaller lengths and are vertically misaligned, compared to those grown on ZnO buffer layer. These differences are attributed to lack of complete c-axis orientation of crystallites in GaN buffer layer, its lattice mismatch with that of ZnO and a hindered nucleation process of ZnO on GaN surface, owing to a finite nucleation barrier and limited surface diffusion. Photoluminescence spectrum of ZnO nanorods on GaN buffer layer, however, exhibits a much stronger near-band-edge luminescence and drastically suppressed defect luminescence compared to the luminescence spectrum of the nanorods grown on ZnO buffer layer. Deconvolution of the photoluminescence peaks and Raman studies indicate significant reduction of oxygen vacancies and gallium incorporation in the ZnO nanorods grown on GaN buffer layer. These observations suggest the possibility of exchange reaction mediated by the aqueous medium, particularly during the initial stages of growth. - Highlights: • ZnO nanorods were grown on sputtered GaN buffer layer deposited on quartz. • ZnO nanorods on polycrystalline GaN show limited vertical alignment of c-axis. • ZnO nanorods on GaN show high band edge and negligible defect luminescence. • Raman and photoluminescence studies indicate solution mediated interface reaction.

  16. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    Science.gov (United States)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  17. Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

    Science.gov (United States)

    Ali, M.; Romanov, A. E.; Suihkonen, S.; Svensk, O.; Sintonen, S.; Sopanen, M.; Lipsanen, H.; Nevedomsky, V. N.; Bert, N. A.; Odnoblyudov, M. A.; Bougrov, V. E.

    2012-04-01

    In this article, we analyze the behavior of threading dislocations in GaN layers re-grown on hexagonally patterned mask-less GaN. The growth mode of the material with patterned hexagonal morphology changes with the diameter and the periodicity of the hexagonal patterns. The growth mode directly affects the shape of the voids that are formed in this kind of lateral epitaxy. Transmission electron microscopy has been used to study threading dislocations in GaN layers with voids having different sizes and sidewall angles. The results show that a significant number of threading dislocations near the tapered void's surface undergo a 90° reorientation in their propagation trajectory whereas almost no dislocations bend in the case of smaller voids having more vertical sidewalls. Different types of dislocations in the vicinity of the voids have also been identified using the invisibility g·b criteria. The full width at half maximum values for XRD ω-scan recorded in (002) reflection drop from 256″ to 181″ as the void sidewall inclination changes from 85° to 60°. A similar dropping trend in the full width at half maximum values for asymmetric diffraction reflections has also been observed.

  18. Scanning tunneling microscopy and spectroscopy on GaN and InGaN surfaces; Rastertunnelmikroskopie und -spektroskopie an GaN- und InGaN-Oberflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, David

    2009-12-02

    Optelectronic devices based on gallium nitride (GaN) and indium gallium nitride (InGaN) are in the focus of research since more than 20 years and still have great potential for optical applications. In the first part of this work non-polar surfaces of GaN are investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and scanning tunneling microscopy (STM). In SEM and AFM, the (1 anti 100)- and especially the (anti 2110)-plane are quite corrugated. For the first time, the (anti 2110)-plane of GaN is atomically resolved in STM. In the second part InGaN quantum dot layers are investigated by X-ray photoelectron spectroscopy (XPS), scanning tunneling spectroscopy (STS) and STM. The STMmeasurements show the dependency of surface morphology on growth conditions in the metalorganic vapour phase epitaxy (MOVPE). Nucleation, a new MOVPE-strategy, is based on phase separations on surfaces. It is shown that locally varying density of states and bandgaps can be detected by STS, that means bandgap histograms and 2D-bandgap-mapping. (orig.)

  19. Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

    Science.gov (United States)

    Fujikura, Hajime; Konno, Taichiro; Yoshida, Takehiro; Horikiri, Fumimasa

    2017-08-01

    Thick (20-30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm-3, with a maximum mobility of 1150 cm2·V-1·s-1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm-3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

  20. Evaluation of freestanding GaN as an alpha and neutron detector

    Energy Technology Data Exchange (ETDEWEB)

    Mulligan, Padhraic; Wang, Jinghui; Cao, Lei, E-mail: cao.152@osu.edu

    2013-08-11

    The wide bandgap (3.39) eV and large dislocation energy of the III–V semiconductor gallium nitride (GaN) make this a desirable material for charged particle spectroscopy in high temperature, high radiation environments. While other research groups have established that charged particle detectors can be fabricated from high quality, thin films of molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) grown GaN, this work demonstrates the feasibility of ionizing radiation detectors created from significantly thicker freestanding n-type GaN, grown via hydride vapor phase epitaxy (HVPE). Detectors were fabricated by depositing Ni/Au pads on n-type GaN, forming a Schottky barrier diode. Capacitance–voltage measurements on the detectors showed an intrinsic carrier concentration in the range of 10{sup −16} cm{sup −3}–10{sup –15} cm{sup −3}, and indicated an inhomogeneous distribution between diodes on the same wafer. The radiation sensitivity of the fabricated detectors was analyzed using alpha particles from an {sup 241}Am source. Charge collection efficiency (CCE) calculations from these experiments indicate an efficiency of 100 percent. The detectors were also successfully used to detect neutron induced charged particles using a Li{sub 2}O foil in a neutron beam.

  1. 10kW TWT Transition to GaN IRE

    Science.gov (United States)

    2015-03-31

    Office. Phase III of this effort would align to a NISE 219 project due to the amount of funding required for thermal modeling and analysis, FEA...done to prepare the 10kW TWT transition to GaN for sponsorship by a Program Office. Phase III of this effort would align to a NISE 219 project due to

  2. Strain effect on optical polarization properties of a -plane GaN on r -plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Chao; Yu, Tongjun; Tao, Renchun; Jia, Chuanyu; Yang, Zhijian; Zhang, Guoyi [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, 100871 Beijing (China)

    2010-07-15

    In this study, the optical polarization properties under varying strains in a-plane GaN were investigated. The valence band (VB) structure for a-plane GaN is derived from the effective-mass Hamiltonian based on k.p perturbation theory. The relative oscillator strength (ROS) calculations of the transitions related to the top three VBs near {gamma} point are applied to analyzing the optical polarized properties. For a-plane GaN, the main components of the first, the second and the third VBs are vertical stroke Y right angle -like (y-axis //[1 anti 100]), vertical stroke Z right angle -like (z-axis //[0001]) and vertical stroke X right angle -like (x-axis //[11 anti 20]) states, respectively. Under small compressive strain along c-axis, the polarization degree increases with compressive strain increasing. According to X-ray diffraction (XRD) scans and Raman backscattering spectra, both the in-plane and out-plane strains were evaluated. Polarized photoluminescence (PL) is employed to obtain the polarization degree. The experimental results of a-plane GaN samples under different strains showed good accordance with our theoretical calculations (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Nanopipes in GaN: photo-etching and TEM study

    NARCIS (Netherlands)

    Lazar, S.; Weyher, J.L.; Macht, L.; Tichelaar, F.D.; Zandbergen, H.W.

    2004-01-01

    Photochemical (PEC) etching and transmission electron microscopy (TEM) have been used to study the defects in hetero-epitaxial GaN layers. TEM proved that PEC etching reveals not only dislocations but also nanopipes in the form of protruding, whisker-like etch features. It is shown by diffraction co

  4. Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

    NARCIS (Netherlands)

    de Boer, W.D.A.M.; McGonigle, C.; Gregorkiewicz, T.; Fujiwara, Y.; Stallinga, P.

    2014-01-01

    We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of

  5. Electron field emission from nanostructured surfaces of GaN and AlGaN

    Energy Technology Data Exchange (ETDEWEB)

    Evtukh, A.; Litovchenko, V.; Semenenko, M.; Gorbanyuk, T.; Grygoriev, A. [Institute of Semiconductor Physics, 41 prospekt Nauki, 03028 Kiev (Ukraine); Yilmazoglu, O.; Hartnagel, H.; Pavlidis, D. [Technische Universitaet Darmstadt, Institut fuer Hochfrequenztechnik, Merckstr. 25, 64283 Darmstadt (Germany)

    2008-07-01

    The possibility of high frequency electromagnetic wave generation by field emission based devices has great interest. The wide bandgap materials GaN and AlGaN are very promising for these applications due to low electron affinity and the existence of satellite valleys in conduction band. The results of investigations of the peculiarities of electron field emission from nanostructured surfaces of GaN and AlGaN are presented. Multilayer GaN and AlGaN structures with various levels of layer doping on sapphire and bulk GaN substrates were used as initial wafers. The surface of the upper layers was nanostructured by photoelectrochemical etching in water solution of KOH. Intensive electron field emission into vacuum was observed and explained by low electron affinity and electric field enhancement on surface nanowires. A decrease of the slope in the Fowler-Nordheim characteristics was revealed. The changing slope suggests a lowering of effective work function. It is caused by electron heating and transfer into an upper satellite valley with lower electron affinity. A theory was developed for the observed phenomena and interpretation of results. It is based on electron intervalley transition upon heating and on energy band reconstruction of the surface of the nanowires due to quantum size-confinement effect. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Cu Ions Irradiation Impact on Structural and Optical Properties of GaN Thin Film

    Science.gov (United States)

    Shah, A.; Husnain, G.; Ahmad, Ishaq; Mahmood, Arshad

    2013-03-01

    Epitaxial grown Gallium nitride (GaN) thin film on sapphire was irradiated with Cu ions at various fluences (5×1014, 1 ×1015 and 5×1015cm-2). The level of lattice disorder, as measured by Rutherford backscattering spectrometry and channeling (RBS/C), gradually increases with the increasing of ions fluence. Lattice amorphization is observed for the sample irradiated with fluence of 5×1015cm-2 which is also confirmed by X-ray diffractometer (XRD) analysis. It was found that both Raman modes of GaN layer clearly shifted with Cu+ fluences. Both Raman and X-ray analyses explore that Cu atom substituted into Ga sites. Atomic force microscopy (AFM) images show the irradiated GaN surface roughness increases with the increasing ions fluence. The UV-visible transmittance spectrum and ellipsometric measurements show a decrease in the band gap value after irradiation of Cu ions in the GaN film. Moreover, the optical constants (n and k) of the films vary with the increasing of Cu ion fluences.

  7. MBE Growth and Characterization of Zincblende GaN and GaN/AlN Structures

    Science.gov (United States)

    1997-07-15

    This Program includes fundamental studies of Molecular beam epitaxial ( MBE ) growth of GaN and its related alloys and heterostructures. In additions...physics of MBE growth , and the optical and electrical properties for GaN-based device application. 1

  8. Electrical properties of Si-doped GaN prepared using pulsed sputtering

    Science.gov (United States)

    Arakawa, Yasuaki; Ueno, Kohei; Imabeppu, Hideyuki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-01-01

    In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range between 1.5 × 1016 and 2.0 × 1020 cm-3. For lightly Si-doped GaN ([Si] = 2.1 × 1016 cm-3), the room temperature (RT) electron mobility was as high as 1008 cm2 V-1 s-1, which was dominantly limited by polar optical phonon scattering. Moreover, we found that heavily Si-doped GaN prepared using PSD exhibited an RT mobility as high as 110 cm2 V-1 s-1 at an electron concentration of 2 × 1020 cm-3, which indicated that the resistivity of this film was almost as small as those of typical transparent conductive oxides such as indium tin oxide. At lower temperatures, the electron mobility increased to 1920 cm2 V-1 s-1 at 136 K, and the temperature dependence was well explained by conventional scattering models. These results indicate that Si-doped GaN prepared using PSD is promising not only for the fabrication of GaN-based power devices but also for use as epitaxial transparent electrode materials for nitride based optical devices.

  9. Modeling and Simulation of a Gallium Nitride (GaN) Betavoltaic Energy Converter

    Science.gov (United States)

    2016-06-01

    technologies, nuclear materials detection, accelerator shielding, and dose/energy deposition in materials for medical therapies . An electron beam with...semiconductor devices have the potential to improve the efficiency of direct energy conversion and indirect energy conversion isotope batteries, making...offering higher- energy-conversion efficiency than 2-dimensional geometries. 15. SUBJECT TERMS GaN, betavoltaic, device simulation, isotope power source

  10. Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Saidi, C.; Chaaben, N.; Laifi, J.; Sekrafi, T. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Tottereau, O. [Centre de Recherche sur l’Hétéro-Epitaxie et Ses Applications, Centre National de la Recherche Scientifique, CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne, Sophia Antipolis (France); Bchetnia, A.; El Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia)

    2015-03-15

    Highlights: • We examined the Bi doping effect on GaN layers properties, grown by LT-MOVPE. • No obvious dependence of growth rate with TMBi flow rate. • TMBi flow rate addition resulted in a reduction of reflectivity oscillation mean value. • We note the appearance of islands and columns containing Bi on layers surface. • While there is a decrease in surface roughness suggesting Bi surfactant effect. - Abstract: Undoped GaN and diluted GaNBi alloys were grown on (0 0 0 1) sapphire substrate by metal–organic vapor phase epitaxy (MOVPE) at 480 °C. By using in-situ laser reflectometry, it is found that the increase of TMBi flow rate leads to a reduction of the average value of reflectivity oscillations. Scanning electron microscopy (SEM) images gave a clear observation of the TMBi increasing amount effect on the surface morphology. The appearance of different structure (islands and columns) on GaN surface could be responsible to the reduction of the reflectivity oscillations average value. The energy dispersive X-ray (EDX) analysis showed that the observed structures were only composed of Bi compared to the flat GaN surface. Moreover, the surface morphology between islands and columns is improved when we increase the TMBi flow rate. This improvement is consistent with the decrease of root mean square (RMS) roughness, as measured by atomic force microscopy (AFM)

  11. Plasmon enhanced green GaN light-emitting diodes - Invited paper

    DEFF Research Database (Denmark)

    Ou, Haiyan; Fadil, Ahmed; Iida, Daisuke

    in spectral design, more compact etc. TheIII-nitride (GaN, InNetc.) semiconductors are attracting a lot of research effort because the combination of both could emit light with wavelength range from UV to infrared. Basically one material platform could provide all the solutions to light sources.However huge...

  12. Fabrication and Characterization of Mg-Doped GaN Nanowires

    Institute of Scientific and Technical Information of China (English)

    ZHANG Dong-Dong; XUE Cheng-Shan; ZHUANG Hui-Zhao; HUANG Ying-Long; WANG Zou-Ping; WANG Ying; GUO Yong-Fu

    2008-01-01

    Mg-doped GaN nanowires have been synthesized by ammoniating Ga2O3 films doped with Mg under flowing ammonia atmosphere at 850℃. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD),scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20-30nm and the lengths are 50-100μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein-Moss effect. The peak at 3.26eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly.

  13. Deep level defect in Si-implanted GaN n +-p junction

    OpenAIRE

    2003-01-01

    The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.

  14. GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting

    Science.gov (United States)

    Hou, Y.; Yu, X.; Syed, Z. Ahmed; Shen, S.; Bai, J.; Wang, T.

    2016-11-01

    A prototype photoelectrode has been fabricated using a GaN nano-pyramid array structure grown on a cost-effective Si (111) substrate, demonstrating a significant improvement in performance of solar-powered water splitting compared with any planar GaN photoelectrode. Such a nano-pyramid structure leads to enhanced optical absorption as a result of a multi-scattering process which can effectively produce a reduction in reflectance. A simulation based on a finite-difference time-domain approach indicates that the nano-pyramid architecture enables incident light to be concentrated within the nano-pyramids as a result of micro-cavity effects, further enhancing optical absorption. Furthermore, the shape of the nano-pyramid further facilitates the photo-generated carrier transportation by enhancing a hole-transfer efficiency. All these features as a result of the nano-pyramid configuration lead to a large photocurrent of 1 mA cm-2 under an illumination density of 200 mW cm-2, with a peak incident photon-to-current conversion efficiency of 46.5% at ˜365 nm, around the band edge emission wavelength of GaN. The results presented are expected to pave the way for the fabrication of GaN based photoelectrodes with a high energy conversion efficiency of solar powered water splitting.

  15. CFD and reaction computational analysis of the growth of GaN by HVPE method

    Science.gov (United States)

    Kempisty, P.; Łucznik, B.; Pastuszka, B.; Grzegory, I.; Boćkowski, M.; Krukowski, S.; Porowski, S.

    2006-10-01

    GaCl synthesis reaction during hydride vapor phase epitaxy (HVPE) growth of GaN in horizontal flow reactor has been analyzed using computerized fluid dynamics (CFD) and molecular estimates of the reaction rates. Finite element code FIDAP (commercially available from Fluent Inc.) [Fidap User Manual, Fluent Inc. [1

  16. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Reza, Shahed; Chumbes, Eduardo M. [Raytheon Integrated Defense Systems, Andover, Massachusetts 01810 (United States); Khurgin, Jacob [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2015-10-12

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

  17. GaN Power Stage for Switch-mode Audio Amplification

    DEFF Research Database (Denmark)

    Ploug, Rasmus Overgaard; Knott, Arnold; Poulsen, Søren Bang

    2015-01-01

    Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction of the enhancement mode eGaN Field Effect Transistor (FET) which makes an adaptation from Metal-Oxide Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode Ga...

  18. Green high-power tunable external-cavity GaN diode laser at 515 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-01-01

    A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam ...

  19. GaN C-band HPA for phased-array applications

    NARCIS (Netherlands)

    Wanum, M. van; Hek, A.P. de; Vliet, F.E. van

    2013-01-01

    In the UMS GH25-10 GaN MMIC technology a Cband high power amplifier (HPA) has been realized. The current design is primarily intended for use in a space-based SAR system with a center frequency of 5.4 GHz and a sweep bandwidth of 100 MHz. To enable reuse of the amplifier in other radar systems such

  20. Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT).

    Science.gov (United States)

    Seo, Jae Hwa; Yoon, Young Jun; Lee, Hwan Gi; Yoo, Gwan Min; Jo, Young-Woo; Son, Dong-Hyeok; Lee, Jung-Hee; Cho, Eou-Sik; Cho, Seongjae; Kang, In Man

    2014-11-01

    Vertical-channel gallium nitride (GaN) junctionless nanowire transistor (JNT) has been designed and characterized by technology computer-aided design (TCAD) simulations. Various characteristics such as wide bandgap, strong polariztion field, and high electron velocity make GaN one of the attractive materials in advanced electronics in recent times. Nanowire-structured GaN can be applicable to various transistors for enhanced electrical performances by its geometrical feature. In this paper, we analyze the direct-current (DC) characteristics depending on various channel doping concentrations (N(ch)) and nanowire radii (R(NW)). Furthermore, the radio-frequency (RF) characteristics under optimized conditions are extracted by small-signal equivalent circuit modeling. For the optimally designed vertical GaN JNT demonstrated on-state current (I(on)) of 345 μA/μm and off-state current (I(off)) of 3.7 x 10(-18) A/μm with a threshold voltage (V(t)) of 0.22 V, and subthreshold swing (S) of 68 mV/dec. Besides, f(T) and f(max) under different operating conditions (gate voltage, V(GS)) have been obtained.

  1. GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium

    Energy Technology Data Exchange (ETDEWEB)

    Bartram, Michael E.; Creighton, J. Randall

    1999-05-26

    Isotopic labeling experiments have revealed correlations between hydrogen reactions, Ga desorption, and ammonia decomposition in GaN CVD. Low energy electron diffraction (LEED) and temperature programmed desorption (TPD) were used to demonstrate that hydrogen atoms are available on the surface for reaction after exposing GaN(0001) to deuterium at elevated temperatures. Hydrogen reactions also lowered the temperature for Ga desorption significantly. Ammonia did not decompose on the surface before hydrogen exposure. However, after hydrogen reactions altered the surface, N15H3 did undergo both reversible and irreversible decomposition. This also resulted in the desorption of N2 of mixed isotopes below the onset of GaN sublimation, This suggests that the driving force of the high nitrogen-nitrogen bond strength (226 kcal/mol) can lead to the removal of nitrogen from the substrate when the surface is nitrogen rich. Overall, these findings indicate that hydrogen can influence G-aN CVD significantly, being a common factor in the reactivity of the surface, the desorption of Ga, and the decomposition of ammonia.

  2. Lanthanide impurity level location in GaN, AlN, and ZnO

    NARCIS (Netherlands)

    Dorenbos, P.; Van der Kolk, E.

    2007-01-01

    A method that has proven succesful in locating the energy levels of divalent and trivalent lanthanide ions (Ce, Pr,..., Eu,...Yb, Lu) in wide band gap inorganic compounds like YPO4 and CaF2 is applied to locate lanthanide levels in the wideband semiconductors GaN, AlN, their solid solutions AlxGa1-x

  3. Location of lanthanide impurity levels in the III-V semiconductor GaN

    NARCIS (Netherlands)

    Dorenbos, P.; Van der Kolk, E.

    2006-01-01

    Knowledge from lanthanide spectroscopy on wide band gap (6–10 eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent l

  4. Evaluation of the influence mode on the CVC GaN HEMT using numerical modeling

    Science.gov (United States)

    Parnes, Ya M.; Tikhomirov, V. G.; Petrov, V. A.; Gudkov, A. G.; Marzhanovskiy, I. N.; Kukhareva, E. S.; Vyuginov, V. N.; Volkov, V. V.; Zybin, A. A.

    2016-08-01

    Done numerically simulated the effects of certain modes of operation on the CVC of field microwave transistors on the basis of heterostructures AlGaN / GaN (HEMT). The results of these studies suggest the possibility of quite efficient use of numerical simulation for the development of HEMT microwave transistors allowing for the real instrument designs.

  5. GaN IMPATT diode: a photo-sensitive high power terahertz source

    Science.gov (United States)

    Mukherjee, Moumita; Mazumder, Nilraton; Roy, Sitesh Kumar; Goswami, Kushalendu

    2007-12-01

    The prospects of wurtzite phase single-drift-region (SDR), flat and single-low-high-low (SLHL) type GaN IMPATT devices as terahertz sources are studied through a simulation experiment. The study indicates that GaN IMPATT diodes are capable of generating high RF power (at least 2.5 W) at around 1.45 THz with high efficiency (17-20%). The superior electronic properties of GaN make this a promising candidate for IMPATT operation in the THz regime, unapproachable by conventional Si, GaAs and InP based IMPATT diodes. The effect of parasitic series resistance on the THz performance of the device is further simulated. It is interesting to note that the presence of a charge bump in a flatly doped SDR structure reduces the value of parasitic series resistance by 22%. The effects of photo- illumination on the devices are also investigated using a modified double iterative simulation technique. Under photo-illumination (i) the negative conductance and (ii) the negative resistance of the devices (both flat and SLHL) decrease, while the frequency of operation and the device quality factor shift upwards. However, the upward shift in operating frequency is found to be more (~16 GHz) in the case of the SLHL SDR IMPATT device. The study indicates that GaN IMPATT is a promising opto-sensitive high power THz source.

  6. Tavatu juhtum / Toomas Rein, Helle Gans, Leonhard Lapin ; interv. Reet Varblane

    Index Scriptorium Estoniae

    Rein, Toomas, 1940-

    2007-01-01

    Arhitektid Toomas Rein ja Leonhard Lapin ning sisearhitekt Helle Gans meenutavad Valgevene näidiskolhoosile Rassvet projekteeritud lasteaeda, mis valmis 1987. aastal. Kompleks pälvis 1987. a. NSVL Arhitektide Liidu preemia ja üleliidulise ametiühingupreemia

  7. Treatment of Chronic Bronchitis with Modified Ma Xing Shi Gan Tang and Er Chen Tang

    Institute of Scientific and Technical Information of China (English)

    朱颖; 刘晓东

    2004-01-01

    @@ Chronic bronchitis is a disease commonly seen in the clinic. The authors have treated 78 cases of the disease with modified Ma Xing Shi Gan Tang (麻杏石甘汤 Decoction of Ephedra, Armeniacae Amarum, Glycyrrhizae and Gypsum Fibrosum) plus Er Chen Tang (二陈汤 Two Old Drugs Decoction). The results were satisfactory and reported as follows.

  8. GaN growth on silane exposed AlN seed layers

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz-Zepeda, F. [Posgrado en Fisica de Materiales, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carret, Tijuana-Ensenada, C.P. 22860, Ensenada, B.C. (Mexico); Contreras, O. [Centro de Ciencias de la Materia Condesada, Universidad Nacional Autonoma de Mexico, Apdo. Postal 356, C.P. 22800, Ensenada, B.C. (Mexico); Dadgar, A.; Krost, A. [Otto-von-Guericke-Universitaet Magdeburg, FNW-IEP, Universitaetsplatz 2, 39106 Magdeburg (Germany)

    2008-07-01

    The microstructure and surface morphology of GaN films grown on AlN seed layers exposed to silane flow has been studied by TEM and AFM. The epilayers were grown on silicon(111) substrates by MOCVD. The AlN seed layer surface was treated at different SiH{sub 4} exposure times prior to the growth of the GaN film. A reduction in the density of threading dislocations is observed in the GaN films and their surface roughness is minimized for an optimal SiH{sub 4} exposure time between 75-90 sec. At this optimal condition a step-flow growth mode of GaN film is predominant. The improvement of the surface and structure quality of the epilayers is observed to be related to an annihilation process of threading dislocations done by SiN{sub x} masking. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Velazquez, R.; Rivera, M.; Feng, P., E-mail: p.feng@upr.edu [Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, 00936-8377, PR/USA (Puerto Rico); Aldalbahi, A. [Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

    2016-08-15

    High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

  10. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

    Directory of Open Access Journals (Sweden)

    R. Velazquez

    2016-08-01

    Full Text Available High-quality single crystalline Gallium Nitride (GaN semiconductor has been synthesized using molecule beam epitaxy (MBE technique for development of high-performance deep ultraviolet (UV photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM. Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

  11. GaN nanostructure-based light emitting diodes and semiconductor lasers.

    Science.gov (United States)

    Viswanath, Annamraju Kasi

    2014-02-01

    GaN and related materials have received a lot of attention because of their applications in a number of semiconductor devices such as LEDs, laser diodes, field effect transistors, photodetectors etc. An introduction to optical phenomena in semiconductors, light emission in p-n junctions, evolution of LED technology, bandgaps of various semiconductors that are suitable for the development of LEDs are discussed first. The detailed discussion on photoluminescence of GaN nanostructures is made, since this is crucial to develop optical devices. Fabrication technology of many nanostructures of GaN such as nanowires, nanorods, nanodots, nanoparticles, nanofilms and their luminescence properties are given. Then the optical processes including ultrafast phenomena, radiative, non-radiative recombination, quantum efficiency, lifetimes of excitons in InGaN quantum well are described. The LED structures based on InGaN that give various important colors of red, blue, green, and their design considerations to optimize the output were highlighted. The recent efforts in GaN technology are updated. Finally the present challenges and future directions in this field are also pointed out.

  12. Piezo-phototronic effect on electroluminescence properties of p-type GaN thin films.

    Science.gov (United States)

    Hu, Youfan; Zhang, Yan; Lin, Long; Ding, Yong; Zhu, Guang; Wang, Zhong Lin

    2012-07-11

    We present that the electroluminescence (EL) properties of Mg-doped p-type GaN thin films can be tuned by the piezo-phototronic effect via adjusting the minority carrier injection efficiency at the metal-semiconductor (M-S) interface by strain induced polarization charges. The device is a metal-semiconductor-metal structure of indium tin oxide (ITO)-GaN-ITO. Under different straining conditions, the changing trend of the transport properties of GaN films can be divided into two types, corresponding to the different c-axis orientations of the films. An extreme value was observed for the integral EL intensity under certain applied strain due to the adjusted minority carrier injection efficiency by piezoelectric charges introduced at the M-S interface. The external quantum efficiency of the blue EL at 430 nm was changed by 5.84% under different straining conditions, which is 1 order of magnitude larger than the change of the green peak at 540 nm. The results indicate that the piezo-phototronic effect has a larger impact on the shallow acceptor states related EL process than on the one related to the deep acceptor states in p-type GaN films. This study has great significance on the practical applications of GaN in optoelectronic devices under a working environment where mechanical deformation is unavoidable such as for flexible/printable light emitting diodes.

  13. Dopant Effects on Defects in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    陆敏; 杨华; 黎子兰; 杨志坚; 李忠辉; 任谦; 金春来; 陆曙; 章蓓; 张国义

    2003-01-01

    The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet,etching of pits, x-ray diffraction and photoluminescence (PL). Three kinds of the samples were prepared with different dopants, that is, nominally undoped, Si-doped and Mg-doped GaN films. It was found that the lowest density of the, etched pit was existed in the nominally undoped GaN, while the highest in the Mg-doped sample.The effects of the dopants on the, etching pits were discussed.

  14. Fabrication of GaN Nanorods in a Large Scale on Si(111) Substrate by Ammoniating Technique

    Institute of Scientific and Technical Information of China (English)

    AI Yu-Jie; XUE Cheng-Shan; SUN Li-Li; SUN Chuan-Wei; ZHUANG Hui-Zhao; WANG Fu-Xue; CHEN Jin-Hua; LI Hong

    2006-01-01

    @@ GaN nanorods in a large scale have been synthesized on Si (111) substrates by ammoniating Ga2Os/Mg films under flowing ammonia atmosphere at the temperature of 1000℃ for 15 min. The as-synthesized GaN nanorods are characterized by scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and highresolution transmission electron microscopy. The results demonstrate that these straight nanorods are hexagonal wurtzite GaN single crystals in diameters ranging from 200 nm to 600 nm.

  15. Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Benton, J.; Bai, J.; Wang, T., E-mail: t.wang@sheffield.ac.uk [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2014-12-01

    We report a cost-effective approach to the fabrication of GaN based nanoporous structure for applications in renewable hydrogen production. Photoelectrochemical etching in a KOH solution has been employed to fabricate both GaN and InGaN/GaN nanoporous structures with pore sizes ranging from 25 to 60 nm, obtained by controlling both etchant concentration and applied voltage. Compared to as-grown planar devices the nanoporous structures have exhibited a significant increase of photocurrent with a factor of up to four times. An incident photon conversion efficiency of up to 46% around the band edge of GaN has been achieved.

  16. Ultra High p-doping Material Research for GaN Based Light Emitters

    Energy Technology Data Exchange (ETDEWEB)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing

  17. Virus Assemblies as Templates for Nanocircuits

    Energy Technology Data Exchange (ETDEWEB)

    James N Culver; Michael T Harris

    2011-08-31

    The goals of this project were directed at the identification and characterization of bio-mineralization processes and patterning methods for the development of nano scale materials and structures with novel energy and conductive traits. This project utilized a simple plant virus as a model template to investigate methods to attach and coat metals and other inorganic compounds onto biologically based nanotemplates. Accomplishments include: the development of robust biological nanotemplates with enhanced inorganic coating activities; novel coating strategies that allow for the deposition of a continuous inorganic layer onto a bio-nanotemplate even in the absence of a reducing agent; three-dimensional patterning methods for the assemble of nano-featured high aspect ratio surfaces and the demonstrated use of these surfaces in enhancing battery and energy storage applications. Combined results from this project have significantly advanced our understanding and ability to utilize the unique self-assembly properties of biologically based molecules to produce novel materials at the nanoscale level.

  18. Pattern formation in nanoporous titania templates.

    Science.gov (United States)

    Richter, C; Wu, Z; Menon, L

    2007-02-01

    We have carried out a systematic investigation into the formation of nanoscaled patterns in titania (TiO2) templates under dc anodization of Ti in HF acid. At lower acid concentrations (around 0.5 wt% HF) either pores or tubes form at the surface of anodized titanium foil. The pores or nanotubes are separated from the bottom Ti layer by a thin barrier layer of TiO2. The critical voltage where the transition from pores to tubes occurs has been determined. It is observed that the transition voltage shift towards higher voltages as acid concentration is increased, with pore formation disappearing altogether at high acid concentrations. We have also carried out a systematic investigation into the dependence of pore and tube parameters on the applied dc anodization voltage. Our results indicate that the barrier layer thickness, pore and tube length increase as a function of applied voltage.

  19. Automated spectral classification using template matching

    Institute of Scientific and Technical Information of China (English)

    Fu-Qing Duan; Rong Liu; Ping Guo; Ming-Quan Zhou; Fu-Chao Wu

    2009-01-01

    An automated spectral classification technique for large sky surveys is pro-posed. We firstly perform spectral line matching to determine redshift candidates for an observed spectrum, and then estimate the spectral class by measuring the similarity be-tween the observed spectrum and the shifted templates for each redshift candidate. As a byproduct of this approach, the spectral redshift can also be obtained with high accuracy. Compared with some approaches based on computerized learning methods in the liter-ature, the proposed approach needs no training, which is time-consuming and sensitive to selection of the training set. Both simulated data and observed spectra are used to test the approach; the results show that the proposed method is efficient, and it can achieve a correct classification rate as high as 92.9%, 97.9% and 98.8% for stars, galaxies and quasars, respectively.

  20. Using archetypes for defining CDA templates.

    Science.gov (United States)

    Moner, David; Moreno, Alberto; Maldonado, José A; Robles, Montserrat; Parra, Carlos

    2012-01-01

    While HL7 CDA is a widely adopted standard for the documentation of clinical information, the archetype approach proposed by CEN/ISO 13606 and openEHR is gaining recognition as a means of describing domain models and medical knowledge. This paper describes our efforts in combining both standards. Using archetypes as an alternative for defining CDA templates permit new possibilities all based on the formal nature of archetypes and their ability to merge into the same artifact medical knowledge and technical requirements for semantic interoperability of electronic health records. We describe the process followed for the normalization of existing legacy data in a hospital environment, from the importation of the HL7 CDA model into an archetype editor, the definition of CDA archetypes and the application of those archetypes to obtain normalized CDA data instances.