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Sample records for hot wet etching

  1. Simulation of convection-driven wet-chemical etching

    NARCIS (Netherlands)

    Driesen, C.H.

    1999-01-01

    In a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

  2. Simulation of convection-driven wet-chemical etching

    NARCIS (Netherlands)

    Driesen, C.H.

    1999-01-01

    a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

  3. Physical chemistry of wet chemical anisotropic etching of silicon

    NARCIS (Netherlands)

    Elwenspoek, Michael Curt

    1995-01-01

    In this paper we explain a view to understand the anisotropy of the etching of silicon in certain wet chemical agents (such as KOH). The starting point is the assumption that the [Left angle bracket]111[Right Angle Bracket] face of silicon is a flat face, the etch rate of which is then governed by a

  4. Level Set Approach to Anisotropic Wet Etching of Silicon

    Directory of Open Access Journals (Sweden)

    Branislav Radjenović

    2010-05-01

    Full Text Available In this paper a methodology for the three dimensional (3D modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community, extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.

  5. Wet-etch sequence optimisation incorporating time dependent chemical maintenance

    NARCIS (Netherlands)

    Kruif, B.J. de

    2015-01-01

    Wafer fabrication is the major cost contributor in semiconductor manufacturing. One of the steps in the fabrication is the removal of exposed layers in an automatic wet-etch station with chemicals. In time, these chemicals get polluted and their effectiveness decreases. Therefore, the chemicals in

  6. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  7. Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

    Directory of Open Access Journals (Sweden)

    Tiago S. Monteiro

    2015-10-01

    Full Text Available In this paper, Isopropanol (IPA availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH solutions was investigated. Squares of 8 to 40 µm were patterned to (100 oriented silicon wafers through DWL (Direct Writing Laser photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing and the angle formed towards the (100 plane.

  8. Model of wet chemical etching of swift heavy ions tracks

    Science.gov (United States)

    Gorbunov, S. A.; Malakhov, A. I.; Rymzhanov, R. A.; Volkov, A. E.

    2017-10-01

    A model of wet chemical etching of tracks of swift heavy ions (SHI) decelerated in solids in the electronic stopping regime is presented. This model takes into account both possible etching modes: etching controlled by diffusion of etchant molecules to the etching front, and etching controlled by the rate of a reaction of an etchant with a material. Olivine ((Mg0.88Fe0.12)2SiO4) crystals were chosen as a system for modeling. Two mechanisms of chemical activation of olivine around the SHI trajectory are considered. The first mechanism is activation stimulated by structural transformations in a nanometric track core, while the second one results from neutralization of metallic atoms by generated electrons spreading over micrometric distances. Monte-Carlo simulations (TREKIS code) form the basis for the description of excitations of the electronic subsystem and the lattice of olivine in an SHI track at times up to 100 fs after the projectile passage. Molecular dynamics supplies the initial conditions for modeling of lattice relaxation for longer times. These simulations enable us to estimate the effects of the chemical activation of olivine governed by both mechanisms. The developed model was applied to describe chemical activation and the etching kinetics of tracks of Au 2.1 GeV ions in olivine. The estimated lengthwise etching rate (38 µm · h-1) is in reasonable agreement with that detected in the experiments (24 µm · h-1).

  9. Etching of fused silica fiber by metallic laser-induced backside wet etching technique

    Energy Technology Data Exchange (ETDEWEB)

    Vass, Cs., E-mail: vasscsaba@physx.u-szeged.hu [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary); Kiss, B.; Kopniczky, J.; Hopp, B. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary)

    2013-08-01

    The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ{sub FWHM} = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm{sup 2}, while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm{sup 2}. The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

  10. Etching of fused silica fiber by metallic laser-induced backside wet etching technique

    International Nuclear Information System (INIS)

    Vass, Cs.; Kiss, B.; Kopniczky, J.; Hopp, B.

    2013-01-01

    The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ FWHM = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm 2 , while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm 2 . The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

  11. Fabrication of high quality GaN nanopillar arrays by dry and wet chemical etching

    OpenAIRE

    Paramanik, Dipak; Motayed, Abhishek; King, Matthew; Ha, Jong-Yoon; Kryluk, Sergi; Davydov, Albert V.; Talin, Alec

    2013-01-01

    We study strain relaxation and surface damage of GaN nanopillar arrays fabricated using inductively coupled plasma (ICP) etching and post etch wet chemical treatment. We controlled the shape and surface damage of such nanopillar structures through selection of etching parameters. We compared different substrate temperatures and different chlorine-based etch chemistries to fabricate high quality GaN nanopillars. Room temperature photoluminescence and Raman scattering measurements were carried ...

  12. Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

    International Nuclear Information System (INIS)

    Kakati, A; Maji, D; Das, S

    2017-01-01

    Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µ m thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C 16 H 36 FN) and tetra-n-butylammonium fluoride (C 5 H 9 NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µ m min −1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5–15 gm l −1 of silicic acid (SiO 2xH2 O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µ m etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures. (paper)

  13. The mechanism of selective corrugation removal by KOH anisotropic wet etching

    International Nuclear Information System (INIS)

    Shikida, M; Inagaki, N; Sasaki, H; Amakawa, H; Fukuzawa, K; Sato, K

    2010-01-01

    The mechanism of selective corrugation removal by anisotropic wet etching—which reduces a periodic corrugation, called 'scalloping', formed on the sidewalls of microstructures by the Bosch process in deep reactive-ion etching (D-RIE)—was investigated. In particular, the corrugation-removal mechanism was analyzed by using the etching rate distribution pattern, and two equations for predicting the corrugation-removal time by the etching were derived. A Si{1 0 0} wafer was first etched by D-RIE at a depth of 29.4 µm (60 cycles) to form the corrugation on the sidewall surface. The height and pitch of the corrugation were 196 and 494 nm, respectively. Selective removal of the corrugation by using 50% KOH (40 °C) was experimentally tried. The corrugation formed on Si{1 0 0} sidewall surfaces was gradually reduced in size as the etching progressed, and it was completely removed after 5 min of etching. Similarly, the corrugation formed on a Si{1 1 0} sidewall surface was also selectively removed by KOH etching (etching time: 3 min). The roughness value of the sidewall surface was reduced from 17.6 nm to a few nanometers by the etching. These results confirm that the corrugation-removal mechanism using anisotropic wet etching can be explained in terms of the distribution pattern of etching rate

  14. Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

    International Nuclear Information System (INIS)

    Su, Y.K.; Chang, S.J.; Kuan, T.M.; Ko, C.H.; Webb, J.B.; Lan, W.H.; Cherng, Y.T.; Chen, S.C.

    2004-01-01

    Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al 0.175 Ga 0.825 N, Al 0.23 Ga 0.77 N, and Al 0.4 Ga 0.6 N, respectively. It was also found that we could achieve a high Al 0.175 Ga 0.825 N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I D larger than 850 mA/mm and a maximum g m about 163 mS/mm from PEC wet etched HFET with a 0.5 μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller

  15. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

    2015-12-30

    Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  16. Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

    Science.gov (United States)

    Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

    2010-06-01

    In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

  17. Quadrilateral Micro-Hole Array Machining on Invar Thin Film: Wet Etching and Electrochemical Fusion Machining

    Directory of Open Access Journals (Sweden)

    Woong-Kirl Choi

    2018-01-01

    Full Text Available Ultra-precision products which contain a micro-hole array have recently shown remarkable demand growth in many fields, especially in the semiconductor and display industries. Photoresist etching and electrochemical machining are widely known as precision methods for machining micro-holes with no residual stress and lower surface roughness on the fabricated products. The Invar shadow masks used for organic light-emitting diodes (OLEDs contain numerous micro-holes and are currently machined by a photoresist etching method. However, this method has several problems, such as uncontrollable hole machining accuracy, non-etched areas, and overcutting. To solve these problems, a machining method that combines photoresist etching and electrochemical machining can be applied. In this study, negative photoresist with a quadrilateral hole array pattern was dry coated onto 30-µm-thick Invar thin film, and then exposure and development were carried out. After that, photoresist single-side wet etching and a fusion method of wet etching-electrochemical machining were used to machine micro-holes on the Invar. The hole machining geometry, surface quality, and overcutting characteristics of the methods were studied. Wet etching and electrochemical fusion machining can improve the accuracy and surface quality. The overcutting phenomenon can also be controlled by the fusion machining. Experimental results show that the proposed method is promising for the fabrication of Invar film shadow masks.

  18. Characterization of deep wet etching of fused silica glass for single cell and optical sensor deposition

    International Nuclear Information System (INIS)

    Zhu, Haixin; Holl, Mark; Ray, Tathagata; Bhushan, Shivani; Meldrum, Deirdre R

    2009-01-01

    The development of a high-throughput single-cell metabolic rate monitoring system relies on the use of transparent substrate material for a single cell-trapping platform. The high optical transparency, high chemical resistance, improved surface quality and compatibility with the silicon micromachining process of fused silica make it very attractive and desirable for this application. In this paper, we report the results from the development and characterization of a hydrofluoric acid (HF) based deep wet-etch process on fused silica. The pin holes and notching defects of various single-coated masking layers during the etching are characterized and the most suitable masking materials are identified for different etch depths. The dependence of the average etch rate and surface roughness on the etch depth, impurity concentration and HF composition are also examined. The resulting undercut from the deep HF etch using various masking materials is also investigated. The developed and characterized process techniques have been successfully implemented in the fabrication of micro-well arrays for single cell trapping and sensor deposition. Up to 60 µm deep micro-wells have been etched in a fused silica substrate with over 90% process yield and repeatability. To our knowledge, such etch depth has never been achieved in a fused silica substrate by using a non-diluted HF etchant and a single-coated masking layer at room temperature

  19. A study on electric properties for pulse laser annealing of ITO film after wet etching

    International Nuclear Information System (INIS)

    Lee, C.J.; Lin, H.K.; Li, C.H.; Chen, L.X.; Lee, C.C.; Wu, C.W.; Huang, J.C.

    2012-01-01

    The electric properties of ITO thin film after UV or IR laser annealing and wet etching was analyzed via grazing incidence in-plane X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectra and residual stress measurement. The laser annealing process readily induced microcracks or quasi-microcracks on the ITO thin film due to the residual tension stress of crystalline phase transformation between irradiated and non-irradiated areas, and these defects then became the preferred sites for a higher etching rate, resulting in discontinuities in the ITO thin film after the wet etching process. The discontinuities in the residual ITO thin film obstruct carrier transmission and further result in electric failure. - Highlights: ► The laser annealing process induces microcracks in InSnO 2 thin films. ► The defects result in higher local etching rate during wet etching. ► These process defects originate from residual tension stress. ► Decreasing the thermal shock is suggested in order to reduce these process defects.

  20. Aluminum oxide mask fabrication by focused ion beam implantation combined with wet etching

    International Nuclear Information System (INIS)

    Liu Zhengjun; Iltanen, Kari; Chekurov, Nikolai; Tittonen, Ilkka; Grigoras, Kestutis

    2013-01-01

    A novel aluminum oxide (Al 2 O 3 ) hard mask fabrication process with nanoscale resolution is introduced. The Al 2 O 3 mask can be used for various purposes, but in this work it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE). The patterning of Al 2 O 3 is a two-step process utilizing focused ion beam (FIB) irradiation combined with wet chemical etching. Gallium (Ga + ) FIB maskless patterning confers wet etch selectivity between the irradiated region and the non-irradiated one on the Al 2 O 3 layer, and mask patterns can easily be revealed by wet etching. This method is a modification of Ga + FIB mask patterning for the silicon etch stop, which eliminates the detrimental lattice damage and doping of the silicon substrate in critical devices. The shallow surface gallium FIB irradiated Al 2 O 3 mask protects the underlying silicon from Ga + ions. The performance of the masking capacity was tested by drawing pairs consisting of a line and an empty space with varying width. The best result was seven such pairs for 1 μm. The smallest half pitch was 59 nm. This method is capable of arbitrary pattern generation. The fabrication of a freestanding single-ended tuning fork resonator utilizing the introduced masking method is demonstrated. (paper)

  1. SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2009-12-01

    Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

  2. Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

    International Nuclear Information System (INIS)

    Tang Longjuan; Zhu Yinfang; Yang Jinling; Li Yan; Zhou Wei; Xie Jing; Liu Yunfei; Yang Fuhua

    2009-01-01

    The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN x :H by HF solution. A low etch rate was achieved by increasing the SiH 4 gas flow rate or annealing temperature, or decreasing the NH 3 and N2 gas flow rate. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO 2 and SiN x :H. A high etching selectivity of SiO 2 over SiN x :H was obtained using highly concentrated buffered HF.

  3. Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

    NARCIS (Netherlands)

    Sokolovskij, R.; Sun, J.; Santagata, F.; Iervolino, E.; Li, S.; Zhang, G.Y.; Sarro, P.M.; Zhang, G.Q.

    2016-01-01

    A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O2 plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported

  4. Simulation of the evolution of fused silica's surface defect during wet chemical etching

    Science.gov (United States)

    Liu, Taixiang; Yang, Ke; Li, Heyang; Yan, Lianghong; Yuan, Xiaodong; Yan, Hongwei

    2017-08-01

    Large high-power-laser facility is the basis for achieving inertial confinement fusion, one of whose missions is to make fusion energy usable in the near future. In the facility, fused silica optics plays an irreplaceable role to conduct extremely high-intensity laser to fusion capsule. But the surface defect of fused silica is a major obstacle limiting the output power of the large laser facility and likely resulting in the failure of ignition. To mitigate, or event to remove the surface defect, wet chemical etching has been developed as a practical way. However, how the surface defect evolves during wet chemical etching is still not clearly known so far. To address this problem, in this work, the three-dimensional model of surface defect is built and finite difference time domain (FDTD) method is developed to simulate the evolution of surface defect during etching. From the simulation, it is found that the surface defect will get smooth and result in the improvement of surface quality of fused silica after etching. Comparatively, surface defects (e.g. micro-crack, scratch, series of pinholes, etc.) of a typical fused silica at different etching time are experimentally measured. It can be seen that the simulation result agrees well with the result of experiment, indicating the FDTD method is valid for investigating the evolution of surface defect during etching. With the finding of FDTD simulation, one can optimize the treatment process of fused silica in practical etching or even to make the initial characterization of surface defect traceable.

  5. Low-loss slot waveguides with silicon (111 surfaces realized using anisotropic wet etching

    Directory of Open Access Journals (Sweden)

    Kapil Debnath

    2016-11-01

    Full Text Available We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI platform. Waveguides oriented along the (11-2 direction on the Si (110 plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

  6. The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

    International Nuclear Information System (INIS)

    Sievilae, Paeivi; Chekurov, Nikolai; Tittonen, Ilkka

    2010-01-01

    Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10 13 ions cm -2 has been determined to be the threshold value for achieving observable etching resistance. Only a thin, approx. 50 nm, surface layer is found to be durable enough to serve as a mask with a high selectivity of at least 2000:1 between implanted and non-implanted areas. The combined FIB-TMAH process has been used to generate various types of 3D nanostructures including nanochannels separated by thin vertical sidewalls with aspect ratios up to 1:30, ultra-narrow (approx. 25 nm) freestanding bridges and cantilevers, and gratings with a resolution of 20 lines μm -1 .

  7. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

    International Nuclear Information System (INIS)

    Chaghi, R; Cervera, C; Aït-Kaci, H; Grech, P; Rodriguez, J B; Christol, P

    2009-01-01

    In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H 3 PO 4 ), citric acid (C 6 H 8 O 7 ) and H 2 O 2 , followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current–voltage measurements. The zero-bias resistance area product R 0 A above 4 × 10 5 Ω cm 2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air

  8. Wet etching mechanism and crystallization of indium-tin oxide layer for application in light-emitting diodes

    Science.gov (United States)

    Su, Shui-Hsiang; Kong, Hsieng-Jen; Tseng, Chun-Lung; Chen, Guan-Yu

    2018-01-01

    In the article, we describe the etching mechanism of indium-tin oxide (ITO) film, which was wet-etched using a solution of hydrochloric acid (HCl) and ferric chloride (FeCl3). The etching mechanism is analyzed at various etching durations of ITO films by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and selective area diffraction (SAD) analysis. In comparison with the crystalline phase of SnO2, the In2O3 phase can be more easily transformed to In3+ and can form an inverted conical structure during the etching process. By adjusting the etching duration, the residual ITO is completely removed to show a designed pattern. This is attributed to the negative Gibbs energy of In2O3 transformed to In3+. The result also corresponds to the finding of energy-dispersive X-ray spectroscopy (EDS) analysis that the Sn/In ratio increases with increasing etching duration.

  9. Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

    Science.gov (United States)

    Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

    2016-05-01

    Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

  10. SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2010-03-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

  11. Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    International Nuclear Information System (INIS)

    Li Yongliang; Xu Qiuxia

    2010-01-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 0 C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. (semiconductor technology)

  12. Composite shear bond strength to dry and wet enamel with three self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Shafiee F

    2006-01-01

    Full Text Available Background and Aim: The bonding mechanisms of self etching primers, based upon the simultaneous etching and priming of dentin, simplifies the bonding technique, but the efficiency of these systems is still controversial. This study compared the shear bond strength of three self etch adhesive systems in dry and wet conditions. Materials and Method: In this experimental study, 77 intact bovine lower incisors with flat 600 grit sanded enamel surface were fixed in acrylic molds and divided into 7 groups, of 11 teeth. The enamel surfaces were treated according to a special procedure as follows: Group 1: Prompt L-Pop (PLP in dry condition, Group 2: Prompt L-Pop in wet condition, Group 3: Clearfield SE Bond (CSEB in dry condition, Group 4: Clearfield SE Bond in wet condition, Group 5: iBond (iB in dry condition, Group 6: iBond in wet condition, Group 7: Margin Bond (Control in dry condition. Surfaces were air dried for ten seconds, or blot dried in wet condition. Composite resin was bonded on the enamel and built up by applying a cylindric teflon split mold (4 mm height 2mm diameter. After 24 hours storage in dionized water at room temperature, all specimens were thermocycled and shear bond test was employed by a universal testing machine (Instron with a cross-head speed of 1mm/min. The shear bond strength was recorded in MPa and data were analyzed with ANOVA and Scheffe statistical tests. P<0.05 was considered as statistically significant. The mode of failure was examined under a stereomicroscope. Results: 1- Shear bond strength of CSEB in dry condition (21.5 ± 4.8 MPa was significantly higher than PLP and iB groups (p<0.0001. 2- Shear bond strength of iB and PLP groups in dry condition (9.60 ± 2.2, 9.49 ± 3 MPa were significantly lower than CSEB and control (2.99 ± 5.1 MPa (P<0.0001. 3- There was no significant difference between PLP and iB groups in dry condition (P=1. 4- Shear bond strength of CSEB in wet condition (21.8 ± 3 MPa was

  13. Simple fabrication of closed-packed IR microlens arrays on silicon by femtosecond laser wet etching

    Science.gov (United States)

    Meng, Xiangwei; Chen, Feng; Yang, Qing; Bian, Hao; Du, Guangqing; Hou, Xun

    2015-10-01

    We demonstrate a simple route to fabricate closed-packed infrared (IR) silicon microlens arrays (MLAs) based on femtosecond laser irradiation assisted by wet etching method. The fabricated MLAs show high fill factor, smooth surface and good uniformity. They can be used as optical devices for IR applications. The exposure and etching parameters are optimized to obtain reproducible microlens with hexagonal and rectangular arrangements. The surface roughness of the concave MLAs is only 56 nm. This presented method is a maskless process and can flexibly change the size, shape and the fill factor of the MLAs by controlling the experimental parameters. The concave MLAs on silicon can work in IR region and can be used for IR sensors and imaging applications.

  14. Fabrication of 3D solenoid microcoils in silica glass by femtosecond laser wet etch and microsolidics

    Science.gov (United States)

    Meng, Xiangwei; Yang, Qing; Chen, Feng; Shan, Chao; Liu, Keyin; Li, Yanyang; Bian, Hao; Du, Guangqing; Hou, Xun

    2015-02-01

    This paper reports a flexible fabrication method for 3D solenoid microcoils in silica glass. The method consists of femtosecond laser wet etching (FLWE) and microsolidics process. The 3D microchannel with high aspect ratio is fabricated by an improved FLWE method. In the microsolidics process, an alloy was chosen as the conductive metal. The microwires are achieved by injecting liquid alloy into the microchannel, and allowing the alloy to cool and solidify. The alloy microwires with high melting point can overcome the limitation of working temperature and improve the electrical property. The geometry, the height and diameter of microcoils were flexibly fabricated by the pre-designed laser writing path, the laser power and etching time. The 3D microcoils can provide uniform magnetic field and be widely integrated in many magnetic microsystems.

  15. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  16. Micropore x-ray optics using anisotropic wet etching of (110) silicon wafers.

    Science.gov (United States)

    Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Mitsuda, Kazuhisa; Hoshino, Akio; Ishisaki, Yoshitaka; Yang, Zhen; Takano, Takayuki; Maeda, Ryutaro

    2006-12-10

    To develop x-ray mirrors for micropore optics, smooth silicon (111) sidewalls obtained after anisotropic wet etching of a silicon (110) wafer were studied. A sample device with 19 microm wide (111) sidewalls was fabricated using a 220 microm thick silicon (110) wafer and potassium hydroxide solution. For what we believe to be the first time, x-ray reflection on the (111) sidewalls was detected in the angular response measurement. Compared to ray-tracing simulations, the surface roughness of the sidewalls was estimated to be 3-5 nm, which is consistent with the atomic force microscope and the surface profiler measurements.

  17. Light-trapping optimization in wet-etched silicon photonic crystal solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eyderman, Sergey, E-mail: sergey.eyderman@utoronto.ca [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); John, Sajeev [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Hafez, M.; Al-Ameer, S. S.; Al-Harby, T. S.; Al-Hadeethi, Y. [Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Bouwes, D. M. [iX-factory GmbH, Konrad Adenauer–Allee 11, 44263 Dortmund (Germany)

    2015-07-14

    We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

  18. Micropore x-ray optics using anisotropic wet etching of (110) silicon wafers

    International Nuclear Information System (INIS)

    Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Mitsuda, Kazuhisa; Hoshino, Akio; Ishisaki, Yoshitaka; Yang Zhen; Takano, Takayuki; Maeda, Ryutaro

    2006-01-01

    To develop x-ray mirrors for micropore optics, smooth silicon (111)sidewalls obtained after anisotropic wet etching of a silicon (110) wafer were studied. A sample device with 19 μm wide (111) sidewalls was fabricated using a 220 μm thick silicon (110) wafer and potassium hydroxide solution. For what we believe to be the first time,x-ray reflection on the (111) sidewalls was detected in the angular response measurement. Compared to ray-tracing simulations, the surface roughness of the sidewalls was estimated to be 3-5 nm, which is consistent with the atomic force microscope and the surface profiler measurements

  19. The influence of the laser spot size and the pulse number on laser-induced backside wet etching

    International Nuclear Information System (INIS)

    Boehme, R.; Zimmer, K.

    2005-01-01

    The laser-induced backside wet etching (LIBWE) of transparent solids at the interface to absorbing liquid is a new promising method for laser microstructuring. The influence of the laser spot size and the applied pulse number to the etch rate were investigated in detail for fused silica and two different liquids. Additional to the significant rise of the etch rate with increasing spot size considerable incubation effects have been observed at low laser fluences and pulse numbers. Based on the bubble formation during LIBWE processing, a relation between the bubble collapse time and the etch rate was ascertained. This relation fits the etch rate dependence on the spot size well. It is assumed that the deposition of decomposition products from the bubble accounts for the spot size influence the etch rate

  20. Nanowall formation by maskless wet-etching on a femtosecond laser irradiated silicon surface

    Science.gov (United States)

    Lee, Siwoo; Jo, Kukhyun; Keum, Hee-sung; Chae, Sangmin; Kim, Yonghyeon; Choi, Jiyeon; Lee, Hyun Hwi; Kim, Hyo Jung

    2018-04-01

    We found that micro-cells surrounded by nanowalls can be formed by a maskless wet-etching process on Si (100) surfaces possessing Laser Induced Periodic Surface Structure (LIPSS) by femtosecond laser irradiation. The LIPSS process could produce periodic one-dimensional micron scale ripples on a Si surface, which could be developed into micro-cells by a subsequent etching process. The solution etching conditions strongly affected both the micro-cell and nanowall shapes such as the height and the thickness of nanowalls. The tetramethylammonium hydroxide solution created thin nanowalls and the resulting micro-cells with a well-flattened bottom while the KOH solution formed thick walls and incomplete micro-cells. The bottoms of micro-cells surrounded by the nanowalls were considerably flat with a 3.10 nm surface roughness. A pentacene layer was deposited on the micro-cells of a Si surface to evaluate the film properties by grazing incidence wide angle x-ray scattering measurements. The pentacene film on the micro-cell Si surface showed a strong film phase, which was comparable to the film phase grown on the atomically flat Si surface.

  1. Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

    Science.gov (United States)

    Slepičková Kasálková, N.; Slepička, P.; Sajdl, P.; Švorčík, V.

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers - polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  2. Nickel silicide thin films as masking and structural layers for silicon bulk micro-machining by potassium hydroxide wet etching

    International Nuclear Information System (INIS)

    Bhaskaran, M; Sriram, S; Sim, L W

    2008-01-01

    This paper studies the feasibility of using titanium and nickel silicide thin films as mask materials for silicon bulk micro-machining. Thin films of nickel silicide were found to be more resistant to wet etching in potassium hydroxide. The use of nickel silicide as a structural material, by fabricating micro-beams of varying dimensions, is demonstrated. The micro-structures were realized using these thin films with wet etching using potassium hydroxide solution on (1 0 0) and (1 1 0) silicon substrates. These results show that nickel silicide is a suitable alternative to silicon nitride for silicon bulk micro-machining

  3. Growing Embossed Nanostructures of Polymer Brushes on Wet-Etched Silicon Templated via Block Copolymers

    Science.gov (United States)

    Lu, Xiaobin; Yan, Qin; Ma, Yinzhou; Guo, Xin; Xiao, Shou-Jun

    2016-02-01

    Block copolymer nanolithography has attracted enormous interest in chip technologies, such as integrated silicon chips and biochips, due to its large-scale and mass production of uniform patterns. We further modified this technology to grow embossed nanodots, nanorods, and nanofingerprints of polymer brushes on silicon from their corresponding wet-etched nanostructures covered with pendent SiHx (X = 1-3) species. Atomic force microscopy (AFM) was used to image the topomorphologies, and multiple transmission-reflection infrared spectroscopy (MTR-IR) was used to monitor the surface molecular films in each step for the sequential stepwise reactions. In addition, two layers of polymethacrylic acid (PMAA) brush nanodots were observed, which were attributed to the circumferential convergence growth and the diffusion-limited growth of the polymer brushes. The pH response of PMAA nanodots in the same region was investigated by AFM from pH 3.0 to 9.0.

  4. Anisotropic etching of polycrystalline silicon with a hot Cl2 molecular beam

    International Nuclear Information System (INIS)

    Suzuki, K.; Hiraoka, S.; Nishimatsu, S.

    1988-01-01

    A hot Cl 2 molecular (Cl/sup */ 2 ) beam was successfully applied to achieve highly anisotropic, highly selective, and almost damage-free etching of polycrystalline Si. The anisotropy, the ratio of etch rates in vertical and horizontal directions, was larger than 25. The selectivity, the ratio of polycrystalline Si and SiO 2 etch rates, was larger than 1000. The Cl/sup */ 2 beam was produced by free jet expansion of a Cl 2 gas heated in a graphite furnace. The furnace temperature was 830 0 C. The substrate temperature was 180 0 C. The average total energy (0.38 eV) of a Cl/sup */ 2 molecule impinging on a substrate surface is much lower than the critical energy (approximately 10 eV) to displace the atoms of the etched material and to cause surface damage. This is the essential reason why this highly selective and almost damage-free etching has been achieved. The highly anisotropic etching mechanism is explained by a model taking into account the directional incidence of Cl/sup */ 2 molecules to the surface, and the deactivation process of the Cl/sup */ 2 molecules on a cold surface

  5. Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching.

    Science.gov (United States)

    Irrera, Alessia; Artoni, Pietro; Fioravanti, Valeria; Franzò, Giorgia; Fazio, Barbara; Musumeci, Paolo; Boninelli, Simona; Impellizzeri, Giuliana; Terrasi, Antonio; Priolo, Francesco; Iacona, Fabio

    2014-02-12

    Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS: 61.46.Km; 78.55.-m; 78.67.Lt.

  6. Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures.

    Science.gov (United States)

    Melkonyan, D; Fleischmann, C; Veloso, A; Franquet, A; Bogdanowicz, J; Morris, R J H; Vandervorst, W

    2018-03-01

    We introduce an innovative specimen preparation method employing the selectivity of a wet-chemical etching step to improve data quality and success rates in the atom probe analysis of contemporary semiconductor devices. Firstly, on the example of an SiGe fin embedded in SiO 2 we demonstrate how the selective removal of SiO 2 from the final APT specimen significantly improves accuracy and reliability of the reconstructed data. With the oxide removal, we eliminate the origin of shape artefacts, i.e. the formation of a non-hemispherical tip shape, that are typically observed in the reconstructed volume of complex systems. Secondly, using the same approach, we increase success rates to ∼90% for the damage-free, 3D site-specific localization of short (250 nm), vertical Si nanowires at the specimen apex. The impact of the abrupt emitter radius change that is introduced by this specimen preparation method is evaluated as being minor using field evaporation simulation and comparison of different reconstruction schemes. The Ge content within the SiGe fin as well as the 3D boron distribution in the Si NW as resolved by atom probe analysis are in good agreement with TEM/EDS and ToF-SIMS analysis, respectively. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene

    Science.gov (United States)

    O, Ryong-Sok; Takamura, Makoto; Furukawa, Kazuaki; Nagase, Masao; Hibino, Hiroki

    2015-03-01

    We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5 µm/h under UV light irradiation in 1 wt % KOH at a constant current of 0.5 mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.

  8. Study on morphology of high-aspect-ratio grooves fabricated by using femtosecond laser irradiation and wet etching

    International Nuclear Information System (INIS)

    Chen, Tao; Pan, An; Li, Cunxia; Si, Jinhai; Hou, Xun

    2015-01-01

    Highlights: • We studied morphologies of silicon grooves fabricated by laser irradiation and wet etching. • We found nano-ripple structures formed on the groove sidewall. • Formations of nano-ripples were due to the formation of standing wave and nanoplanes. • Remaining debris on the groove bottom was removed by KOH etching. - Abstract: Morphologies of high-aspect-ratio silicon grooves fabricated by using femtosecond laser irradiation and selective chemical etching of hydrofluoric acid (HF) were studied. Oxygen was deeply doped into silicon under femtosecond laser irradiation in air, and then the oxygen-doped regions were removed by HF etching to form high-aspect-ratio grooves. After HF etching, periodic nano-ripples which were induced in silicon by femtosecond laser were observed on the groove sidewalls. The ripple orientation was perpendicular or parallel to the laser propagation direction (z direction), which depended on the relative direction between the laser polarization direction and the scanning direction. The formation of nano-ripples with orientations perpendicular to z direction could be attributed to the standing wave generated by the interference of the incident light and the reflected light in z direction. The formation of nano-ripples with orientations parallel to z direction could be attributed to the formation of self-organized periodic nanoplanes (bulk nanogratings) induced by femtosecond laser inside silicon. Materials in the tail portion of laser-induced oxygen doping (LIOD) regions were difficult to be etched by HF solution due to low oxygen concentration. The specimen was etched further in KOH solution to remove remaining materials in LIOD regions and all-silicon grooves were fabricated

  9. Fatigue Performance of SFPSC under Hot-Wet Environments and Cyclic Bending Loads

    Directory of Open Access Journals (Sweden)

    Shanshan Luo

    2018-01-01

    Full Text Available A new structural material named “steel fiber polymer structural concrete (SFPSC” with features of both high strength and high toughness was developed by this research group and applied to the bridge superstructures in the hot-wet environments. In order to investigate the fatigue performance and durability of SFPSC under hot-wet environments, the environment and fatigue load uncoupling method and the coupling action of environment and fatigue load were used or developed. Three-point bending fatigue experiments with uncoupling action of environments and cyclic loads were carried out for SFPSC specimens which were pretreated under hot-wet environments, and the experiments with the coupling action of environments and cyclic loads for SFPSC specimens were carried out under hot-wet environments. Then, the effects of hot-wet environments and the experimental methods on the fatigue mechanism of SFPSC material were discussed, and the environmental fatigue equations of SFPSC material under coupling and uncoupling action of hot-wet environments and cyclic bending loads were established. The research results show that the fatigue limits of SFPSC under the coupling action of the environments and cyclic loads were lower about 15%. The proposed fatigue equations could be used to estimate the fatigue lives and fatigue limits of SFPSC material.

  10. Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates

    International Nuclear Information System (INIS)

    Lee, Chi-Yuan; Chang, Chienliu; Shih, Wen-Pin; Dai, Ching-Liang

    2010-01-01

    The wet etch process for amorphous indium gallium zinc oxide (a-IGZO or a-InGaZnO) by using various etchants is reported. The etch rates of a-IGZO, compared to another indium-based oxides including indium gallium oxide (IGO), indium zinc oxide (IZO), and indium tin oxide (ITO), are measured by using acetic acid, citric acid, hydrochloric acid, perchloric acid, and aqua ammonia as etchants, respectively. In our experimental results, the etch rate of the transparent oxide semiconductor (TOS) films by using acid solutions ranked accordingly from high to low are IZO, IGZO, IGO and ITO. Comparatively, the etch rate of the TOS films by using alkaline ammonia solution ranked from high to low are IGZO, IZO, IGO and ITO, in that order. Using the proposed wet etching process with high etch selectivity, bottom-gate-type thin-film transistors (TFTs) based on a-IGZO channels and Y 2 O 3 gate-insulators were fabricated by radio-frequency sputtering on plastic substrates. The wet etch processed TFT with 30 μm gate length and 120 μm gate width exhibits a saturation mobility of 46.25 cm 2 V -1 s -1 , a threshold voltage of 1.3 V, a drain current on-off ratio > 10 6 , and subthreshold gate voltage swing of 0.29 V decade -1 . The performance of the TFTs ensures the applicability of the wet etching process for IGZO to electronic devices on organic polymer substrates.

  11. Nanoscale silver-assisted wet etching of crystalline silicon for anti-reflection surface textures.

    Science.gov (United States)

    Li, Rui; Wang, Shuling; Chuwongin, Santhad; Zhou, Weidong

    2013-01-01

    We report here an electro-less metal-assisted chemical etching (MacEtch) process as light management surface-texturing technique for single crystalline Si photovoltaics. Random Silver nanostructures were formed on top of the Si surface based on the thin film evaporation and annealing process. Significant reflection reduction was obtained from the fabricated Si sample, with approximately 2% reflection over a wide spectra range (300 to 1050 nm). The work demonstrates the potential of MacEtch process for anti-reflection surface texture fabrication of large area, high efficiency, and low cost thin film solar cell.

  12. Evaluation of the soft x-ray reflectivity of micropore optics using anisotropic wet etching of silicon wafers.

    Science.gov (United States)

    Mitsuishi, Ikuyuki; Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Maeda, Yoshitomo; Yamasaki, Noriko Y; Mitsuda, Kazuhisa; Shirata, Takayuki; Hayashi, Takayuki; Takano, Takayuki; Maeda, Ryutaro

    2010-02-20

    The x-ray reflectivity of an ultralightweight and low-cost x-ray optic using anisotropic wet etching of Si (110) wafers is evaluated at two energies, C K(alpha)0.28 keV and Al K(alpha)1.49 keV. The obtained reflectivities at both energies are not represented by a simple planar mirror model considering surface roughness. Hence, an geometrical occultation effect due to step structures upon the etched mirror surface is taken into account. Then, the reflectivities are represented by the theoretical model. The estimated surface roughness at C K(alpha) (approximately 6 nm rms) is significantly larger than approximately 1 nm at Al K(alpha). This can be explained by different coherent lengths at two energies.

  13. Evaluation of the soft x-ray reflectivity of micropore optics using anisotropic wet etching of silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Mitsuishi, Ikuyuki; Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Maeda, Yoshitomo; Yamasaki, Noriko Y.; Mitsuda, Kazuhisa; Shirata, Takayuki; Hayashi, Takayuki; Takano, Takayuki; Maeda, Ryutaro

    2010-02-20

    The x-ray reflectivity of an ultralightweight and low-cost x-ray optic using anisotropic wet etching of Si (110) wafers is evaluated at two energies, C K{alpha}0.28 keV and Al K{alpha}1.49 keV. The obtained reflectivities at both energies are not represented by a simple planar mirror model considering surface roughness. Hence, an geometrical occultation effect due to step structures upon the etched mirror surface is taken into account. Then, the reflectivities are represented by the theoretical model. The estimated surface roughness at C K{alpha} ({approx}6 nm rms) is significantly larger than {approx}1 nm at Al K{alpha}. This can be explained by different coherent lengths at two energies.

  14. Nanosecond laser-induced back side wet etching of fused silica with a copper-based absorber liquid

    Science.gov (United States)

    Lorenz, Pierre; Zehnder, Sarah; Ehrhardt, Martin; Frost, Frank; Zimmer, Klaus; Schwaller, Patrick

    2014-03-01

    Cost-efficient machining of dielectric surfaces with high-precision and low-roughness for industrial applications is still challenging if using laser-patterning processes. Laser induced back side wet etching (LIBWE) using UV laser pulses with liquid heavy metals or aromatic hydrocarbons as absorber allows the fabrication of well-defined, nm precise, free-form surfaces with low surface roughness, e.g., needed for optical applications. The copper-sulphatebased absorber CuSO4/K-Na-Tartrate/NaOH/formaldehyde in water is used for laser-induced deposition of copper. If this absorber can also be used as precursor for laser-induced ablation, promising industrial applications combining surface structuring and deposition within the same setup could be possible. The etching results applying a KrF excimer (248 nm, 25 ns) and a Nd:YAG (1064 nm, 20 ns) laser are compared. The topography of the etched surfaces were analyzed by scanning electron microscopy (SEM), white light interferometry (WLI) as well as laser scanning microscopy (LSM). The chemical composition of the irradiated surface was studied by energy-dispersive X-ray spectroscopy (EDX) and Fourier transform infrared spectroscopy (FT-IR). For the discussion of the etching mechanism the laser-induced heating was simulated with finite element method (FEM). The results indicate that the UV and IR radiation allows micro structuring of fused silica with the copper-based absorber where the etching process can be explained by the laser-induced formation of a copper-based absorber layer.

  15. Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

    Science.gov (United States)

    Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

    2017-09-01

    Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

  16. Enhancement of terahertz radiation in a Smith-Purcell backward-wave oscillator by an inverse wet-etched grating

    International Nuclear Information System (INIS)

    Kim, Jung-Il; Jeon, Seok-Gy; Kim, Geun-Ju; Kim, Jaehong

    2011-01-01

    A terahertz (THz) Smith-Purcell (SP) backward-wave oscillator with an inverse wet-etched grating based on silicon has been proposed to enhance radiation intensity. This grating strengthens the interactions between an electron beam and the evanescent wave due to the adjacent surface structure between gratings that improves the magnitude of the electric field up to 1.7 times compared to the conventional rectangular gratings. A two-dimensional particle-in-cell (PIC) simulation shows that the radiated power is increased up to 2.3 times higher at the radiated frequency of 0.66 THz for an electron-beam energy of 30 keV.

  17. Antireflective surface structures in glass by self-assembly of SiO2 nanoparticles and wet etching.

    Science.gov (United States)

    Maier, Thomas; Bach, David; Müllner, Paul; Hainberger, Rainer; Brückl, Hubert

    2013-08-26

    We describe the fabrication of an antireflective surface structure with sub-wavelength dimensions on a glass surface using scalable low-cost techniques involving sol-gel coating, thermal annealing, and wet chemical etching. The glass surface structure consists of sand dune like protrusions with 250 nm periodicity and a maximum peak-to-valley height of 120 nm. The antireflective structure increases the transmission of the glass up to 0.9% at 700 nm, and the transmission remains enhanced over a wide spectral range and for a wide range of incident angles. Our measurements reveal a strong polarization dependence of the transmission change.

  18. Effect of surface acid etching on the biaxial flexural strength of two hot-pressed glass ceramics.

    Science.gov (United States)

    Hooshmand, Tabassom; Parvizi, Shaghayegh; Keshvad, Alireza

    2008-07-01

    The purpose of this study was to assess the effect of surface acid etching on the biaxial flexural strength of two hot-pressed glass ceramics reinforced by leucite or lithium disilicate crystals. Forty glass ceramic disks (14-mm diameter, 2-mm thick) consisting of 20 leucite-based ceramic disks (IPS Empress) and 20 lithia disilicate-based ceramic (IPS Empress 2) were produced by hot-pressing technique. All specimens were polished and then cleaned ultrasonically in distilled water. Ten specimens of each ceramic group were then etched with 9% hydrofluoric (HF) acid gel for 2 minutes and cleaned ultrasonically again. The biaxial flexural strength was measured by the piston-on-three-ball test in a universal testing machine. Data based on ten specimens in each group were analyzed by two-way ANOVA (alpha= 0.05). Microstructure of ceramic surfaces before and after acid etching was also examined by a scanning electron microscope. The mean biaxial flexural strength values for each group tested were (in MPa): nonetched IPS Empress = 118.6 +/- 25.5; etched IPS Empress = 102.9 +/- 15.4; nonetched IPS Empress 2 = 283.0 +/- 48.5; and etched IPS Empress 2 = 250.6 +/- 34.6. The results showed that the etching process reduced the biaxial flexural strengths significantly for both ceramic types (p= 0.025). No significant interaction between the ceramic type and etching process was found (p= 0.407). From the results, it was concluded that surface HF acid etching could have a weakening effect on hot-pressed leucite or lithia disilicate-based glass ceramic systems.

  19. Surface changes of biopolymers PHB and PLLA induced by Ar{sup +} plasma treatment and wet etching

    Energy Technology Data Exchange (ETDEWEB)

    Slepičková Kasálková, N. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Sajdl, P. [Department of Power Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar{sup +} plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers – polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  20. Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

    International Nuclear Information System (INIS)

    Tokuda, Yutaka; Shimada, Hitoshi

    1998-01-01

    Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

  1. Fabrication of 3D electro-thermal micro actuators in silica glass by femtosecond laser wet etch and microsolidics

    Science.gov (United States)

    Li, Qichao; Shan, Chao; Yang, Qing; Chen, Feng; Bian, Hao; Hou, Xun

    2017-02-01

    This paper demonstrates a novel electro-thermal micro actuator's design, fabrication and device tests which combine microfluidic technology and microsolidics process. A three-dimensional solenoid microchannel with high aspect ratio is fabricated inside the silica glass by an improved femtosecond laser wet etch (FLWE) technology, and the diameter of the spiral coil is only 200 μm. Molten alloy (Bi/In/Sn/Pb) with high melting point is injected into the three-dimensional solenoid microchannel inside the silica glass , then it solidifys and forms an electro-thermal micro actuator. The device is capable of achieving precise temperature control and quick response, and can also be easily integrated into MEMS, sensors and `lab on a chip' (LOC) platform inside the fused silica substrate.

  2. Imaging and etching, soft x-ray microscopy on whole wet cells

    International Nuclear Information System (INIS)

    Gilbert, J.R.; Pine, J.

    1993-01-01

    The authors have produced images of whole wet tissue culture cells with the Stony Brook/BNL scanning transmission x-ray microscope (STXM). For fixed cells the authors have taken images at theoretical resolutions of ∼50-75nm, and in practice have measured FWHM of features down to near 100nm, without any exotic image processing. For unfixed (i.e., initially live) cells the authors have imaged with 100nm pixels and measured features down to 250nm. In order to do this the authors have developed, tested and used a wet cell for maintaining fixed or live cells on the STXM stage during imaging. The design of the wet cell and the culture substrates that go with it make the STXM compatible with almost all standard systems for surface adherent tissue culture. The authors will show some new images of whole wet fixed and unfixed cells, with visible sub-micron features. The authors will also report data that helps to characterize the tissue damage due to x-ray absorption during STXM imaging

  3. Electrodeless wet etching of n-GaN assisted with ultraviolet light

    International Nuclear Information System (INIS)

    Skriniarova, J.; Novotny, I.

    2012-01-01

    In this paper we studied photo-assisted electrodeless etching (ELPEC) of n-GaN in a K_2S_2O_8/KOH solution irradiated continuously with UV light. We investigated the impact of mask material on n-GaN patterning. As mask material thin layers of Ti, Pt and Au were used. The ratio of mask covered surface area to uncovered one was 7:1, 1:2 and 1:5. The K_2S_2O_8 oxidizing agent concentration was kept in the range from 0.006 to 0.1 M, the KOH electrolyte concentration was kept in the range from 0.004 to 0.04 M. (authors)

  4. Single step sequential polydimethylsiloxane wet etching to fabricate a microfluidic channel with various cross-sectional geometries

    Science.gov (United States)

    Wang, C.-K.; Liao, W.-H.; Wu, H.-M.; Lo, Y.-H.; Lin, T.-R.; Tung, Y.-C.

    2017-11-01

    Polydimethylsiloxane (PDMS) has become a widely used material to construct microfluidic devices for various biomedical and chemical applications due to its desirable material properties and manufacturability. PDMS microfluidic devices are usually fabricated using soft lithography replica molding methods with master molds made of photolithogrpahy patterned photoresist layers on silicon wafers. The fabricated microfluidic channels often have rectangular cross-sectional geometries with single or multiple heights. In this paper, we develop a single step sequential PDMS wet etching process that can be used to fabricate microfluidic channels with various cross-sectional geometries from single-layer PDMS microfluidic channels. The cross-sections of the fabricated channel can be non-rectangular, and varied along the flow direction. Furthermore, the fabricated cross-sectional geometries can be numerically simulated beforehand. In the experiments, we fabricate microfluidic channels with various cross-sectional geometries using the developed technique. In addition, we fabricate a microfluidic mixer with alternative mirrored cross-sectional geometries along the flow direction to demonstrate the practical usage of the developed technique.

  5. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  6. Anti-reflection textured structures by wet etching and island lithography for surface-enhanced Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Chao, Bo-Kai [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Cheng, Hsin-Hung [Department of Marine Engineering, Taipei College of Maritime Technology, Taipei 11174, Taiwan (China); Nien, Li-Wei; Chen, Miin-Jang [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Nagao, Tadaaki [Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Li, Jia-Han [Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Hsueh, Chun-Hway, E-mail: hsuehc@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2015-12-01

    Graphical abstract: - Highlights: • We fabricated textured SERS substrate with a high surface area and low reflectance. • Large surface area of substrate contains more gold nanodroplets to absorb analytes. • Low reflectance of textured SERS substrate enabled multiple reflections of incident laser light. • We obtained strong SERS enhancement from nanopillar-on-pyramid SERS substrate. - Abstract: A high surface area and low reflection textured surface-enhanced Raman scattering (SERS) substrate with plasmonic gold nanodroplets fabricated by wet etching and island lithography was reported in the present study. Specifically, four textured substrates, planar, pyramid, nanopillar, and nanopillar-on-pyramid, were fabricated. The fabricated structures were simulated using the finite-difference time-domain method and the results agreed with the reflection and dark-field scattering measurements. Although the SERS signals varied in different measured regions because of the random nanostructure, the SERS substrates with nanopillar-on-pyramid structure always have the stronger enhancement factor than the SERS substrates with only pyramids or nanopillars. Based on the atomic force microscope and reflection measurements, the nanopillar-on-pyramid structure provided a large surface area and multiple reflections for SERS enhancement, which was about 3 orders of magnitude larger than that of the planar substrate. Our results can be applied to fabricate the inexpensive, large surface area, and high SERS enhancement substrates.

  7. Measurement and analysis of the re-wetting front velocity during quench cooling of hot horizontal tubes

    Energy Technology Data Exchange (ETDEWEB)

    Takrouri, Kifah, E-mail: takroukj@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Luxat, John, E-mail: luxatj@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Hamed, Mohamed [Thermal Processing Laboratory (TPL), Department of Mechanical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada)

    2017-01-15

    Highlights: • Two phase flow & re-wetting front velocity were studied for quench of hot tubes. • The velocity decreased as temperature difference between tube and coolant decreased. • Increasing surface curvature was found to decrease the re-wetting front velocity. • Increasing tube thermal conductivity decreased the velocity. • Correlations were developed to predict the front velocity. - Abstract: When a liquid is put into contact with a hot dry surface, there exists a maximum temperature called the re-wetting temperature below which the liquid is in actual contact with the surface. Re-wetting occurs after destabilization of a vapor film that exists between the hot surface and the liquid. If re-wetting is established at a location on the hot surface, a wet patch appears at that location and starts to spread to cover and cool the entire surface. The outer edge of the wet patch is called the re-wetting front and can proceed only if the surface ahead of it cools down to the re-wetting temperature. Study of re-wetting heat transfer is very important in nuclear reactor safety for limiting the extent of core damage during the early stages of severe accidents after loss of coolant accidents LOCA and is essential for predicting the rate at which the coolant cools an overheated core. One of the important parameters in re-wetting cooling is the velocity at which the re-wetting front moves on the surface. In this study, experimental tests were carried out to investigate the re-wetting front velocity on hot horizontal cylindrical tubes being cooled by a vertical rectangular water multi-jet system. Effects of initial surface temperature in the range 400–740 °C, water subcooling in the range 15–80 °C and jet velocity in the range 0.17–1.43 m/s on the re-wetting front velocity were investigated. The two-phase flow behavior was observed by using a high-speed camera. The re-wetting front velocity was found to increase by increasing water subcooling, decreasing

  8. The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001 GaAs Surface

    Directory of Open Access Journals (Sweden)

    Lyamkina AA

    2011-01-01

    Full Text Available Abstract In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

  9. Interface and transport properties of metallization contacts to flat and wet-etching roughed N-polar n-type GaN.

    Science.gov (United States)

    Wang, Liancheng; Liu, Zhiqiang; Guo, Enqing; Yang, Hua; Yi, Xiaoyan; Wang, Guohong

    2013-06-26

    The electrical characteristics of metallization contacts to flat (F-sample, without wet-etching roughed) and wet-etching roughed (R-sample) N-polar (Nitrogen-polar) n-GaN have been investigated. R-sample shows higher contact resistance (Rc) to Al/Ti/Au (~2.5 × 10(-5) Ω·cm(2)) and higher Schottky barriers height (SBH, ~0.386 eV) to Ni/Au, compared with that of F-sample (~1.3 × 10(-6) Ω·cm(2), ~0.154 eV). Reasons accounting for this discrepancy has been detail investigated and discussed: for R-sample, wet-etching process caused surface state and spontaneous polarization variation will degraded its electrical characteristics. Metal on R-sample shows smoother morphology, however, the effect of metal deposition state on electrical characteristics is negligible. Metallization contact area for both samples has also been further considered. Electrical characteristics of metallization contact to both samples show degradation upon annealing. The VLED chip (1 mm × 1 mm), which was fabricated on the basis of a hybrid scheme, coupling the advantage of F- and R-sample, shows the lowest forward voltage (2.75 V@350 mA) and the highest light output power.

  10. Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Nathan A., E-mail: 523615@swansea.ac.uk [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom); Evans, Jon E.; Jones, Daniel R. [Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Lord, Alex M. [Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Wilks, S.P. [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom)

    2015-03-15

    Highlights: • Arrays of catalyst-free ZnO NWs have been grown by CVD without seed layers on Si. • Si surface topography was altered by substrate etching, resulting in NW growth. • XPS analysis shows growth is related to topography and not surface contamination. • Using e-beam lithography with etching, selective nanowire growth is demonstrated. • Electrical measurements on the arrays show improved conduction through the Si. - Abstract: Arrays of CVD catalyst-free ZnO nanowires have been successfully grown without the use of seed layers, using both wet chemical and dry plasma etching methods to alter surface topography. XPS analysis indicates that the NW growth cannot be attributed to a substrate surface chemistry and is therefore directly related to the substrate topography. These nanowires demonstrate structural and optical properties typical of CVD ZnO nanowires. Moreover, the NW arrays exhibit a degree of vertical alignment of less than 20° from the substrate normal. Electrical measurements suggest an improved conduction path through the substrate over seed layer grown nanowires. Furthermore, the etching technique was combined with e-beam lithography to produce high resolution selective area nanowire growth. The ability to pattern uniform nanowires using mature dry etch technology coupled with the increased charge transport through the substrate demonstrates the potential of this technique in the vertical integration of nanowire arrays.

  11. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Basudev, E-mail: swain@iae.re.kr [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Mishra, Chinmayee [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Hong, Hyun Seon [Sungshin University, Dept. of Interdisciplinary ECO Science, Seoul, 142-732 (Korea, Republic of); Cho, Sung-Soo [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of)

    2016-05-15

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m{sup 3} of copper and 1.35 kg/m{sup 3} of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching

  12. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

    International Nuclear Information System (INIS)

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-01-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m 3 of copper and 1.35 kg/m 3 of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching wastewater

  13. Glass frit bonding with controlled width and height using a two-step wet silicon etching procedure

    Science.gov (United States)

    Yifang, Liu; Daner, Chen; Liwei, Lin; Gaofeng, Zheng; Jianyi, Zheng; Lingyun, Wang; Daoheng, Sun

    2016-03-01

    A simple and versatile two-step silicon wet etching technique for the control of the width and height of the glass frit bonding layer has been developed to improve bonding strength and reliability in wafer-level microelectromechanical systems (MEMS) packaging processes. The height of the glass frit bonding layer is set by the design of a vertical reference wall which regulates the distance between the silicon wafer and the encapsulation capping substrate. On the other hand, the width of the bonding layer is constrained between two micro grooves which are used to accommodate the spillages of extra glass frit during the bonding process. An optimized thermal bonding process, including the formation of glass liquid, removal of gas bubbles under vacuum and the filling of voids under normal atmospheric condition has been developed to suppress the formation of the bubbles/voids. The stencil printing and pre-sintering processes for the glass frit have been characterized before the thermal bonding process under different magnitudes of bonding pressure. The bonding gap thickness is found to be equal to the height of the reference wall of 10 μm in the prototype design. The bubbles/voids are found to be suppressed effectively and the bonding strength increases from 10.2 to 19.1 MPa as compared with a conventional thermal annealing process in air. Experimentally, prototype samples are measured to have passed the high hermetic sealing leakage tests of 5  ×  10-8 atm cc s-1.

  14. Using chemical wet-etching methods of textured AZO films on a-Si:H solar cells for efficient light trapping

    International Nuclear Information System (INIS)

    Lin, Guo-Sheng; Li, Chien-Yu; Huang, Kuo-Chan; Houng, Mau-Phon

    2015-01-01

    In this paper, Al-doped ZnO (AZO) films are deposited on glasses substrate by RF magnetron sputtering. The optical, electrical and morphological properties of AZO films textured by wet-etching with different etchants, H 3 PO 4 , HCl, and HNO 3 are studied. It is found that the textured structure could enhance the light scattering and light trapping ability of amorphous silicon solar cells. The textured AZO film etched with HNO 3 exhibits optimized optical properties (T% ≧ 80% over entire wavelength, haze ratio > 40% at 550 nm wavelength) and excellent electrical properties (ρ = 5.86 × 10 −4 Ωcm). Scanning electron microscopy and Atomic force microscopy are used to observe surface morphology and average roughness of each textured AZO films. Finally, the textured AZO films etched by H 3 PO 4 , HCl and HNO 3 were applied to front electrode layer for p–i–n amorphous silicon solar cells. The highest conversion efficiency of amorphous silicon solar cell fabricated on HNO 3 -etched AZO film was 7.08% with open-circuit voltage, short-circuit current density and fill factor of 895 mV, 14.92 mA/cm 2 and 0.56, respectively. It shows a significantly enhancement in the short-circuit current density and conversion efficiency by 16.2% and 20.2%, respectively, compared with the solar cell fabricated on as-grown AZO film. - Highlights: • The textured surface enhances light scattering and light trapping ability. • The HNO 3 -etched AZO film exhibits excellent optical and electrical properties. • The efficiency of a-Si:H solar cell fabricated on HNO 3 -etched AZO film was 7.08%. • The short-circuit current density enhances to 16.2%. • The conversion efficiency enhances to 20.2%

  15. Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Boukhicha, Rym, E-mail: rym.boukhicha@polytechnique.edu [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Charpentier, Coralie [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Prod' Homme, Patricia [Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Roca i Cabarrocas, Pere [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Lerat, Jean-François; Emeraud, Thierry [Photovoltaic Business Unit, Excico Group NV, Kempische Steenweg 305/2, B-3500 Hasselt (Belgium); Johnson, Erik [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France)

    2014-03-31

    We explore the influence of the sputtering deposition conditions on the outcome of an excimer laser anneal and chemical etching process with the goal of producing highly textured substrates for thin film silicon solar cells. Aluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency magnetron sputtering from a ceramic target at room temperature. The effects of the process pressure (0.11–1.2 Pa) and oxygen flow (0–2 sccm) on the optical and electrical properties of ZnO:Al thin films have been studied both before and after an excimer laser annealing treatment followed by a dilute HCl chemical etch. The as-deposited films varied from completely opaque to yellowish. Thin film laser annealing dramatically improves the optical properties of the most opaque thin films. After laser annealing at the optimum fluence, the average transmittance in the visible wavelength range was around 80% for most films, and reasonable electrical performance was obtained for the films deposited at lower pressures and without oxygen flux (7 Ω/□ for films of 1 μm). After etching, all films displayed a dramatic improvement in haze, but only the low pressure, low oxygen films retained acceptable electrical properties (< 11 Ω/□). - Highlights: • Al:ZnO thin films were deposited at room temperature. • The ZnO:Al films were excimer laser annealed and then wet-etched. • The optical and electrical properties were studied in details.

  16. Optical ridge waveguides preserving the thermo-optic features in LiNbO3 crystals fabricated by combination of proton implantation and selective wet etching.

    Science.gov (United States)

    Tan, Yang; Chen, Feng

    2010-05-24

    We report on a new, simple method to fabricate optical ridge waveguides in a z-cut LiNbO3 wafer by using proton implantation and selective wet etching. The measured modal field is well confined in the ridge waveguide region, which is also confirmed by the numerical simulation. With thermal annealing treatment at 400 degrees C, the propagation loss of the ridge waveguides is determined to be as low as approximately 0.9 dB/cm. In addition, the measured thermo-optic coefficients of the waveguides are in good agreement with those of the bulk, suggesting potential applications in integrated photonics.

  17. Using chemical wet-etching methods of textured AZO films on a-Si:H solar cells for efficient light trapping

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Guo-Sheng; Li, Chien-Yu; Huang, Kuo-Chan; Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw

    2015-06-15

    In this paper, Al-doped ZnO (AZO) films are deposited on glasses substrate by RF magnetron sputtering. The optical, electrical and morphological properties of AZO films textured by wet-etching with different etchants, H{sub 3}PO{sub 4}, HCl, and HNO{sub 3} are studied. It is found that the textured structure could enhance the light scattering and light trapping ability of amorphous silicon solar cells. The textured AZO film etched with HNO{sub 3} exhibits optimized optical properties (T% ≧ 80% over entire wavelength, haze ratio > 40% at 550 nm wavelength) and excellent electrical properties (ρ = 5.86 × 10{sup −4} Ωcm). Scanning electron microscopy and Atomic force microscopy are used to observe surface morphology and average roughness of each textured AZO films. Finally, the textured AZO films etched by H{sub 3}PO{sub 4}, HCl and HNO{sub 3} were applied to front electrode layer for p–i–n amorphous silicon solar cells. The highest conversion efficiency of amorphous silicon solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08% with open-circuit voltage, short-circuit current density and fill factor of 895 mV, 14.92 mA/cm{sup 2} and 0.56, respectively. It shows a significantly enhancement in the short-circuit current density and conversion efficiency by 16.2% and 20.2%, respectively, compared with the solar cell fabricated on as-grown AZO film. - Highlights: • The textured surface enhances light scattering and light trapping ability. • The HNO{sub 3}-etched AZO film exhibits excellent optical and electrical properties. • The efficiency of a-Si:H solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08%. • The short-circuit current density enhances to 16.2%. • The conversion efficiency enhances to 20.2%.

  18. Hot water extraction with in situ wet oxidation: Kinetics of PAHs removal from soil

    International Nuclear Information System (INIS)

    Dadkhah, Ali A.; Akgerman, Aydin

    2006-01-01

    Finding environmentally friendly and cost-effective methods to remediate soils contaminated with polycyclic aromatic hydrocarbons (PAHs) is currently a major concern of researchers. In this study, a series of small-scale semi-continuous extractions - with and without in situ wet oxidation - were performed on soils polluted with PAHs, using subcritical water (i.e. liquid water at high temperatures and pressures, but below the critical point) as the removal agent. Experiments were performed in a 300 mL reactor using an aged soil sample. To find the desorption isotherms and oxidation reaction rates, semi-continuous experiments with residence times of 1 and 2 h were performed using aged soil at 250 deg. C and hydrogen peroxide as oxidizing agent. In all combined extraction and oxidation flow experiments, PAHs in the remaining soil after the experiments were almost undetectable. In combined extraction and oxidation no PAHs could be detected in the liquid phase after the first 30 min of the experiments. Based on these results, extraction with hot water, if combined with oxidation, should reduce the cost of remediation and can be used as a feasible alternative technique for remediating contaminated soils and sediments

  19. Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN.

    Science.gov (United States)

    Jang, Dongsoo; Jue, Miyeon; Kim, Donghoi; Kim, Hwa Seob; Lee, Hyunkyu; Kim, Chinkyo

    2018-03-07

    On an SiO 2 -patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at the boundary of the circular openings. After etching of N-polar GaN on the circular openings by H 3 PO 4 , this template was coated with 40-nm Si by sputtering and was slightly etched by KOH. After slight etching, a thin layer of Si left on the circular openings of sapphire,but not on GaN, was oxidized during thermal annealing and served as a dielectric mask during subsequent regrowth. Thus, the subsequent growth of GaN was made only on the existing Ga-polar GaN domains, not on the circular openings of the sapphire substrate. Transmission electron microscopy analysis revealed no sign of threading dislocations in this film. This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO 2 -patterned sapphire.

  20. Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique

    Science.gov (United States)

    Liu, J.; Wang, J.; Wang, H.; Zhu, L.; Wu, W.

    2017-06-01

    Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω·mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

  1. Wet-etching induced abnormal phase transition in highly strained VO{sub 2}/TiO{sub 2} (001) epitaxial film

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Hui; Chen, Shi; Chen, Yuliang; Luo, Zhenlin; Zhou, Jingtian; Zheng, Xusheng; Wang, Liangxin; Li, Bowen; Zou, Chongwen [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei (China)

    2018-01-15

    The metal-insulator transition (MIT) behavior in vanadium dioxide (VO{sub 2}) epitaxial film is known to be dramatically affected by interfacial stress due to lattice mismatching. For the VO{sub 2}/TiO{sub 2} (001) system, there exists a considerable strain in ultra-thin VO{sub 2} thin film, which shows a lower T{sub c} value close to room temperature. As the VO{sub 2} epitaxial film grows thicker layer-by-layer along the ''bottom-up'' route, the strain will be gradually relaxed and T{sub c} will increase as well, until the MIT behavior becomes the same as that of bulk material with a T{sub c} of about 68 C. Whereas, in this study, we find that the VO{sub 2}/TiO{sub 2} (001) film thinned by ''top-down'' wet-etching shows an abnormal variation in MIT, which accompanies the potential relaxation of film strain with thinning. It is observed that even when the strained VO{sub 2} film is etched up to several nanometers, the MIT persists, and T{sub c} will increase up to that of bulk material, showing the trend to a stress-free ultra-thin VO{sub 2} film. The current findings demonstrate a facial chemical-etching way to change interfacial strain and modulate the phase transition behavior of ultrathinVO{sub 2} films, which can also be applied to other strained oxide films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

    Science.gov (United States)

    Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2014-07-23

    Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

  3. Improvement of the optical quality of site-controlled InAs quantum dots by a double stack growth technique in wet-chemically etched holes

    Energy Technology Data Exchange (ETDEWEB)

    Pfau, Tino Johannes; Gushterov, Aleksander; Reithmaier, Johann-Peter [Technische Physik, INA, Universitaet Kassel (Germany); Cestier, Isabelle; Eisenstein, Gadi [Electrical Engineering Dept., Technion, Haifa (Israel); Linder, Evgany; Gershoni, David [Solid State Institute and Physics Dept., Technion, Haifa (Israel)

    2010-07-01

    The optimization of the wet-chemically etching of holes and a special MBE growth stack technique allows enlarging the site-control of low density InAs QDs on GaAs substrates up to a buffer layer thickness of 55 nm. The strain of InAs QDs, grown in the etched holes, reduces the hole closing, so that a pre-patterned surface is conserved for the second QD layer. The distance of 50 nm GaAs between the two QD layers exceeds drastically the maximum vertical alignment based on pure strain coupling (20 nm). Compared to stacks with several QD layers, this method avoids electronic coupling between the different QD layers and reduces the problems to distinguish the dots of different layers optically. Confocal microphotoluminescence reveals a significant diminution of the low temperature photoluminescence linewidth of the second InAs QD layer to an average value of 505{+-}53 {mu}eV and a minimum width of 460 {mu}eV compared to 2 to 4 meV for QDs grown on thin buffer layers. The increase of the buffer layer thickness decreases the influence of the surface defects caused by prepatterning.

  4. Design and application of a metal wet-etching post-process for the improvement of CMOS-MEMS capacitive sensors

    International Nuclear Information System (INIS)

    Tsai, Ming-Han; Sun, Chih-Ming; Liu, Yu-Chia; Fang, Weileun; Wang, Chuanwei

    2009-01-01

    This study presents a process design methodology to improve the performance of a CMOS-MEMS gap-closing capacitive sensor. In addition to the standard CMOS process, the metal wet-etching approach is employed as the post-CMOS process to realize the present design. The dielectric layers of the CMOS process are exploited to form the main micro mechanical structures of the sensor. The metal layers of the CMOS process are used as the sensing electrodes and sacrificial layers. The advantages of the sensor design are as follows: (1) the parasitic capacitance is significantly reduced by the dielectric structure, (2) in-plane and out-of-plane sensing gaps can be reduced to increase the sensitivity, and (3) plate-type instead of comb-type out-of-plane sensing electrodes are available to increase the sensing electrode area. To demonstrate the feasibility of the present design, a three-axis capacitive CMOS-MEMS accelerometers chip is implemented and characterized. Measurements show that the sensitivities of accelerometers reach 11.5 mV G −1 (in the X-, Y-axes) and 7.8 mV G −1 (in the Z-axis), respectively, which are nearly one order larger than existing designs. Moreover, the detection of 10 mG excitation using the three-axis accelerometer is demonstrated for both in-plane and out-of-plane directions

  5. High-quality InN grown on KOH wet etched N-polar InN template by RF-MBE

    International Nuclear Information System (INIS)

    Muto, D.; Araki, T.; Kitagawa, S.; Kurouchi, M.; Nanishi, Y.; Naoi, H.; Na, H.

    2006-01-01

    We have succeeded in dramatically decreasing the density of dislocations in InN by regrowing InN films on micro-facetted N-polar InN templates. The micro-facetted N-polar InN templates were formed by wet etching in a 10 mol/l KOH solution. InN films were regrown on the micro-facetted N-polar InN templates and on flat surface N-polar InN templates for comparison by radio-frequency plasma-assisted molecular beam epitaxy. InN regrown on micro-facetted InN had considerably smaller twist distribution than that grown on the flat InN templates. From transmission electron microscopy observation, it was confirmed that the InN grown on the micro-facetted InN template had much lower density of dislocations than that grown on the flat InN template, and moreover the propagation of edge dislocations was almost completely terminated at the interface between the regrown InN and the micro-facetted InN template. Based on the results, we propose that regrowth of InN on micro-facetted InN templates is an effective way to obtain high-quality InN films. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Six-month evaluation of adhesives interface created by a hydrophobic adhesive to acid-etched ethanol-wet bonded dentine with simplified dehydration protocols.

    Science.gov (United States)

    Sadek, Fernanda T; Mazzoni, Annalisa; Breschi, Lorenzo; Tay, Franklin R; Braga, Roberto R

    2010-04-01

    To evaluate the efficacy of simplified dehydration protocols, in the absence of tubular occlusion, on bond strength and interfacial nanoleakage of a hydrophobic experimental adhesive blend to acid-etched, ethanol-dehydrated dentine immediately and after 6 months. Molars were randomly assigned to 6 treatment groups (n=5). Under pulpal pressure simulation, dentine crowns were acid-etched with 35% H(3)PO(4) and rinsed with water. Adper Scotchbond Multi-Purpose was used for the control group. The remaining groups had their dentine surface dehydrated with ethanol solutions: group 1=50%, 70%, 80%, 95% and 3x100%, 30s for each application; group 2 the same ethanol sequence with 15s for each solution; groups 3, 4 and 5 used 100% ethanol only, applied in seven, three or one 30s step, respectively. After dehydration, a primer (50% BisGMA+TEGDMA, 50% ethanol) was used, followed by the neat comonomer adhesive application. Resin composite build-ups were then prepared using an incremental technique. Specimens were stored for 24h, sectioned into beams and stressed to failure after 24h or after 6 months of artificial ageing. Interfacial silver leakage evaluation was performed for both storage periods (n=5 per subgroup). Group 1 showed higher bond strengths at 24h or after 6 months of ageing (45.6+/-5.9(a)/43.1+/-3.2(a)MPa) and lower silver impregnation. Bond strength results were statistically similar to control group (41.2+/-3.3(ab)/38.3+/-4.0(ab)MPa), group 2 (40.0+/-3.1(ab)/38.6+/-3.2(ab)MPa), and group 3 at 24h (35.5+/-4.3(ab)MPa). Groups 4 (34.6+/-5.7(bc)/25.9+/-4.1(c)MPa) and 5 (24.7+/-4.9(c)/18.2+/-4.2(c)MPa) resulted in lower bond strengths, extensive interfacial nanoleakage and more prominent reductions (up to 25%) in bond strengths after 6 months of ageing. Simplified dehydration protocols using one or three 100% ethanol applications should be avoided for the ethanol-wet bonding technique in the absence of tubular occlusion, as they showed decreased bond strength, more

  7. Effects of evaporative cooling on reproductive performance and milk production of dairy cows in hot wet conditions

    Science.gov (United States)

    Khongdee, S.; Chaiyabutr, N.; Hinch, G.; Markvichitr, K.; Vajrabukka, C.

    2006-05-01

    Fourteen animals of second and third lactation of Thai Friesian crossbred cows (87.5% Friesian × 12.5% Bos indicus) located at Sakol Nakhon Research and Breeding Centre, Department of Livestock Development, Ministry of Agriculture and Cooperatives, were divided randomly into two groups of seven each to evaluate the effects of evaporative cooling on reproductive and physiological traits under hot, humid conditions. Results indicated that installation of evaporating cooling in the open shed gave a further improvement in ameliorating heat stress in dairy cows in hot-wet environments by utilising the low humidity conditions that naturally occur during the day. The cows housed in an evaporatively cooled environment had both a rectal temperature and respiration rate (39.09°C, 61.39 breaths/min, respectively) significantly lower than that of the non-cooled cows (41.21°C; 86.87 breaths/min). The former group also had higher milk yield and more efficient reproductive performance (pregnancy rate and reduced days open) than the latter group. It is suggested that the non-evaporatively cooled cows did not gain benefit from the naturally lower heat stress during night time.

  8. Wet chemical etching of Al-doped ZnO film deposited by RF magnetron sputtering method on textured glass substrate for energy application

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Ki Hwan; Nam, Sang Hun; Jung, Won Suk; Lee, Yong Min; Yang, Hee Su; Boo, Jin Hyo [Dept. of Chemistry, Sungkyunkwan University, Suwon (Korea, Republic of)

    2015-03-15

    The etching of glasses in aqueous hydrofluoric acid (HF) solutions is applied in many technological fields. Particularly, the textured transparent conductive oxide materials on the glass substrate etched by HF were used to improve the current density of solar cells. In this study, the textured glass substrate has been etched by solution and the Al-doped ZnO (AZO) thin films have been prepared on this textured glass substrates by RF magnetron sputtering method. After the AZO film deposition, the surface of AZO has been etched by hydrochloric acid with different concentration and etching time. Etched AZO thin films had higher haze ratio and sheet resistance than bare AZO glass. Increases in the root-mean-square surface roughness of AZO films enhanced from 53.78 to 84.46 nm the haze ratio in above 700 nm wavelength. Our process could be applicable in texturing glass and etching AZO surface to fabricate solar cell in industrial scale. We also carried out fabricating an organic solar-cell device. Energy conversion efficiency improvement of 123% was obtained with textured AZO-based solar-cell device compared with that of nontextured solar-cell device.

  9. Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

    Science.gov (United States)

    Naddaf, M.

    2017-01-01

    Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

  10. Effect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cells

    OpenAIRE

    Sahayaraj, Sylvester; Brammertz, Guy; Vermang, Bart; Ranjbar, Samaneh; Meuris, Marc; Vleugels, Jef; Poortmans, Jef

    2016-01-01

    The influence of the duration of the KCN etching step on the efficiency of Cu2ZnSnSe4 (CZTSe) solar cells and Post deposition annealing (PDA) has been explored. CZTSe thin film absorbers prepared by selenization at 450 degrees C were etched by 5 wt% KCN/KOH from 30s up to 360 s before solar cell processing. KCN etching times above 120 s resulted in poor efficiencies. The fill factor (FF) and short circuit current density Jsc) of these devices were affected severely. After annealing the solar ...

  11. Impact of Climate Change on Outdoor Thermal Comfort and Health in Tropical Wet and Hot Zone (Douala, Cameroon

    Directory of Open Access Journals (Sweden)

    Modeste Kameni Nematchoua

    2014-04-01

    Full Text Available Abstract Background and purpose:Climate change has an important role on the health and productivity of the occupant of the building. The objective of this study is to estimate the effects of climate change on thermal comfort in hot and wet areas, as in the case of the city of Douala. Materials and Methods:The general circulation model (CSMK3 Model, Scenario B1 was adopted for this purpose.Outdoor daily parameters of temperature, sunshine, and precipitation of last 40 years were analyzed and allowed us to make forecast on this area. The past (1990-2000, the present (2001-2011, and the future (2012-2022 were considered in the hypotheses. Results:It has been found that Douala like some large cities of Africa is already and will be severely hit of advantage by climate change if anything is not going to slow. By 2033, it is expected to have an increase of more than 0.21° C of temperature thus, a decrease of precipitation. Conclusion:In 2023, total discomfort will reign in the dry season, especially in January where humidex could reach 42.9. On the other hand, in the rainy season, humidex will increase of 0.91 compared to year 2013. This effect will have an increase of temperature. When we maintain relative humidity, and we increase temperature, humidex varies enormously and displays a maximum value, with maximum temperature.

  12. Experimental investigation of quench and re-wetting temperatures of hot horizontal tubes well above the limiting temperature for solid–liquid contact

    Energy Technology Data Exchange (ETDEWEB)

    Takrouri, Kifah, E-mail: takroukj@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Luxat, John, E-mail: luxatj@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Hamed, Mohamed [Thermal Processing Laboratory (TPL), Department of Mechanical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada)

    2017-01-15

    Highlights: • Quench and re-wetting temperatures were measured upon jet quenching of hot cylindrical tubes. • Correlations have been developed and provided good fit of data. • Quench and re-wetting temperatures were found to greatly depend on water subcooling. • Stagnation point showed higher quench and re-wetting temperatures than other locations. • Quench temperature decreased by increasing surface curvature and tube conductivity. • Re-wetting temperature is a weak function of both variables. - Abstract: Quench cooling of a hot dry surface involves the rapid decrease in surface temperature resulting from bringing the hot surface into sudden contact with a coolant at a lower temperature. Quench temperature is the onset of the rapid decrease in surface temperature and corresponds to the onset of destabilization of a vapor film that exists between the hot surface and the coolant. Situations involving quench cooling are encountered in a number of postulated accidents in Canada Deuterium Uranium CANDU reactors, such as the quench of a hot calandria tube in certain Loss of Coolant Accidents LOCA. If the calandria tube temperature is not reduced by initiation of quench heat transfer, then this may lead to subsequent fuel channel failure and for this accident knowledge of quench heat transfer characteristics is of great importance. In this study, a Water Quench Facility WQF has been designed and built at the Thermal Processing Laboratory TPL at McMaster University and a series of experimental tests were carried out to investigate the quench of hot horizontal tubes using a vertical rectangular water multi-jet system. The tubes were heated to a temperature between 380 and 780 °C then cooled to the jet temperature. The temperature variation with time in tube circumferential and axial directions was measured. The two-phase flow behavior and the propagation of the re-wetting front around and along the tubes were simultaneously observed using a high-speed camera

  13. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  14. Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

    Science.gov (United States)

    Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

    2018-03-01

    Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

  15. Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

    International Nuclear Information System (INIS)

    Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo

    2014-01-01

    Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples

  16. Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-10-30

    Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.

  17. Evaluation of wet bulb globe temperature index for estimation of heat strain in hot/humid conditions in the Persian Gulf

    OpenAIRE

    Habibolah Dehghan; Seyed Bagher Mortazavi; Mohammad J Jafari; Mohammad R Maracy

    2012-01-01

    Background: Heat exposure among construction workers in the Persian Gulf region is a serious hazard for health. The aim of this study was to evaluate the performance of wet bulb globe temperature (WBGT) Index for estimation of heat strain in hot/humid conditions by the use of Physiological Strain Index (PSI) as the gold standard. Material and Methods : This cross-sectional study was carried out on 71 workers of two Petrochemical Companies in South of Iran in 2010 summer. The WBGT index, heart...

  18. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

  19. An Overt Chemical Protective Garment Reduces Thermal Strain Compared with a Covert Garment in Warm-Wet but Not Hot-Dry Environments

    Directory of Open Access Journals (Sweden)

    Matthew J. Maley

    2017-11-01

    Full Text Available Objectives: A commercial chemical, biological, radiological and nuclear (CBRN protective covert garment has recently been developed with the aim of reducing thermal strain. A covert CBRN protective layer can be worn under other clothing, with equipment added for full chemical protection when needed. However, it is unknown whether the covert garment offers any alleviation to thermal strain during work compared with a traditional overt ensemble. Therefore, the aim of this study was to compare thermal strain and work tolerance times during work in an overt and covert ensemble offering the same level of CBRN protection.Methods: Eleven male participants wore an overt (OVERT or covert (COVERT CBRN ensemble and walked (4 km·h−1, 1% grade for a maximum of 120 min in either a wet bulb globe temperature [WBGT] of 21, 30, or 37°C (Neutral, WarmWet and HotDry, respectively. The trials were ceased if the participants' gastrointestinal temperature reached 39°C, heart rate reached 90% of maximum, walking time reached 120 min or due to self-termination.Results: All participants completed 120 min of walking in Neutral. Work tolerance time was greater in OVERT compared with COVERT in WarmWet (P < 0.001, 116.5[9.9] vs. 88.9[12.2] min, respectively, though this order was reversed in HotDry (P = 0.003, 37.3[5.3] vs. 48.4[4.6] min, respectively. The rate of change in mean body temperature and mean skin temperature was greater in COVERT (0.025[0.004] and 0.045[0.010]°C·min−1, respectively compared with OVERT (0.014[0.004] and 0.027[0.007]°C·min−1, respectively in WarmWet (P < 0.001 and P = 0.028, respectively. However, the rate of change in mean body temperature and mean skin temperature was greater in OVERT (0.068[0.010] and 0.170[0.026]°C·min−1, respectively compared with COVERT (0.059[0.004] and 0.120[0.017]°C·min−1, respectively in HotDry (P = 0.002 and P < 0.001, respectively. Thermal sensation, thermal comfort, and ratings of perceived

  20. Combined pretreatment with hot compressed water and wet disk milling opened up oil palm biomass structure resulting in enhanced enzymatic digestibility.

    Science.gov (United States)

    Zakaria, Mohd Rafein; Hirata, Satoshi; Fujimoto, Shinji; Hassan, Mohd Ali

    2015-10-01

    Combined pretreatment with hot compressed water and wet disk milling was performed with the aim to reduce the natural recalcitrance of oil palm biomass by opening its structure and provide maximal access to cellulase attack. Oil palm empty fruit bunch and oil palm frond fiber were first hydrothermally pretreated at 150-190° C and 10-240 min. Further treatment with wet disk milling resulted in nanofibrillation of fiber which caused the loosening of the tight biomass structure, thus increasing the subsequent enzymatic conversion of cellulose to glucose. The effectiveness of the combined pretreatments was evaluated by chemical composition changes, power consumption, morphological alterations by SEM and the enzymatic digestibility of treated samples. At optimal pretreatment process, approximately 88.5% and 100.0% of total sugar yields were obtained from oil palm empty fruit bunch and oil palm frond fiber samples, which only consumed about 15.1 and 23.5 MJ/kg of biomass, respectively. Copyright © 2015 Elsevier Ltd. All rights reserved.

  1. Effect of solar radiation on the performance of cross flow wet cooling tower in hot climate of Iran

    Science.gov (United States)

    Banooni, Salem; Chitsazan, Ali

    2016-11-01

    In some cities such as Ahvaz-Iran, the solar radiation is very high and the annual-mean-daily of the global solar radiation is about 17.33 MJ m2 d-1. Solar radiation as an external heat source seems to affect the thermal performance of the cooling towers. Usually, in modeling cooling tower, the effects of solar radiation are ignored. To investigate the effect of sunshade on the performance and modeling of the cooling tower, the experiments were conducted in two different states, cooling towers with and without sunshade. In this study, the Merkel's approach and finite difference technique are used to predict the thermal behavior of cross flow wet cooling tower without sunshade and the results are compared with the data obtained from the cooling towers with and without sunshade. Results showed that the sunshade is very efficient and it reduced the outlet water temperature, the approach and the water exergy of the cooling tower up to 1.2 °C, 15 and 1.1 %, respectively and increased the range and the efficiency of the cooling tower up to 29 and 37 %, respectively. Also, the sunshade decreased the error between the experimental data of the cooling tower with sunshade and the modeling results of the cooling tower without sunshade 1.85 % in average.

  2. Wet cutting

    Energy Technology Data Exchange (ETDEWEB)

    Hole, B. [IMC Technical Services (United Kingdom)

    1999-08-01

    Continuous miners create dust and methane problems in underground coal mining. Control has usually been achieved using ventilation techniques as experiments with water based suppression have led to flooding and electrical problems. Recent experience in the US has led to renewed interest in wet head systems. This paper describes tests of the Hydraphase system by IMC Technologies. Ventilation around the cutting zone, quenching of hot ignition sources, dust suppression, the surface trial gallery tests, the performance of the cutting bed, and flow of air and methane around the cutting head are reviewed. 1 ref., 2 figs., 2 photos.

  3. Influence of Gas Atmosphere Dew Point on the Selective Oxidation and the Reactive Wetting During Hot Dip Galvanizing of CMnSi TRIP Steel

    Science.gov (United States)

    Cho, Lawrence; Lee, Seok Jae; Kim, Myung Soo; Kim, Young Ha; De Cooman, Bruno C.

    2013-01-01

    The selective oxidation and reactive wetting of intercritically annealed Si-bearing CMnSi transformation-induced plasticity steels were investigated by high-resolution transmission electron microscopy. In a N2 + 10 pct H2 gas atmosphere with a dew point (DP) ranging from 213 K to 278 K (-60 °C to 5 °C), a continuous layer of selective oxides was formed on the surface. Annealing in a higher DP gas atmosphere resulted in a thinner layer of external oxidation and a greater depth of internal oxidation. The hot dipping was carried out in a Zn bath containing 0.22 mass pct Al, and the bath temperature was 733 K (460 °C). Coarse and discontinuous Fe2Al5- x Zn x grains and Fe-Zn intermetallics (ζ and δ) were observed at the steel/coating interface after the hot dip galvanizing (HDG) of panels were annealed in a low DP atmosphere 213 K (-60 °C). The Fe-Zn intermetallics were formed both in areas where the Fe2Al5- x Zn x inhibition layer had not been formed and on top of non-stoichiometric Fe-Al-Zn crystals. Poor wetting was observed on panels annealed in a low DP atmosphere because of the formation of thick film-type oxides on the surface. After annealing in higher DP gas atmospheres, i.e., 263 K and 278 K (-10 °C and 5 °C), a continuous and fine-grained Fe2Al5- x Zn x layer was formed. No Fe-Zn intermetallics were formed. The small grain size of the inhibition layer was attributed to the nucleation of the Fe2Al5- x Zn x grains on small ferrite sub-surface grains and the presence of granular surface oxides. A high DP atmosphere can therefore significantly contribute to the decrease of Zn-coating defects on CMnSi TRIP steels processed in HDG lines.

  4. Evaluation of wet bulb globe temperature index for estimation of heat strain in hot/humid conditions in the Persian Gulf.

    Science.gov (United States)

    Dehghan, Habibolah; Mortazavi, Seyed Bagher; Jafari, Mohammad J; Maracy, Mohammad R

    2012-12-01

    Heat exposure among construction workers in the Persian Gulf region is a serious hazard for health. The aim of this study was to evaluate the performance of wet bulb globe temperature (WBGT) Index for estimation of heat strain in hot/humid conditions by the use of Physiological Strain Index (PSI) as the gold standard. This cross-sectional study was carried out on 71 workers of two Petrochemical Companies in South of Iran in 2010 summer. The WBGT index, heart rate, and aural temperature were measured by Heat Stress Monitor (Casella Microtherm WBGT), Heart Rate Monitor (Polar RS100), and Personal Heat Strain Monitor (Questemp II), respectively. The obtained data were analyzed with descriptive statistics and Pearson correlation analysis. The mean (SD) of WBGT values was 33.1 (2.7). The WBGT values exceed from American Conference of Governmental Industrial Hygienists (ACGIH) standard (30°C) in 96% work stations, whereas the PSI values were more than 5.0 (moderate strain) in 11% of workstations. The correlation between WBGT and PSI values was 0.61 (P = 0.001). When WBGT values were less and more than 34°C, the mean of PSI was 2.6 (low strain) and 5.2 (moderate strain), respectively. In the Persian Gulf weather, especially hot and humid in the summer months, due to the WBGT values exceeding 30°C (in 96% of cases) and weak correlation between WBGT and PSI, the work/rest cycles of WBGT Index is not suitable for heat stress management. Therefore, in Persian Gulf weather, heat stress evaluation based on physiologic variables may have higher validity than WBGT index.

  5. Evaluation of wet bulb globe temperature index for estimation of heat strain in hot/humid conditions in the Persian Gulf

    Directory of Open Access Journals (Sweden)

    Habibolah Dehghan

    2012-01-01

    Full Text Available Background: Heat exposure among construction workers in the Persian Gulf region is a serious hazard for health. The aim of this study was to evaluate the performance of wet bulb globe temperature (WBGT Index for estimation of heat strain in hot/humid conditions by the use of Physiological Strain Index (PSI as the gold standard. Material and Methods : This cross-sectional study was carried out on 71 workers of two Petrochemical Companies in South of Iran in 2010 summer. The WBGT index, heart rate, and aural temperature were measured by Heat Stress Monitor (Casella Microtherm WBGT, Heart Rate Monitor (Polar RS100, and Personal Heat Strain Monitor (Questemp II, respectively. The obtained data were analyzed with descriptive statistics and Pearson correlation analysis. Results: The mean (SD of WBGT values was 33.1 (2.7. The WBGT values exceed from American Conference of Governmental Industrial Hygienists (ACGIH standard (30°C in 96% work stations, whereas the PSI values were more than 5.0 (moderate strain in 11% of workstations. The correlation between WBGT and PSI values was 0.61 ( P = 0.001. When WBGT values were less and more than 34°C, the mean of PSI was 2.6 (low strain and 5.2 (moderate strain, respectively. Conclusion: In the Persian Gulf weather, especially hot and humid in the summer months, due to the WBGT values exceeding 30°C (in 96% of cases and weak correlation between WBGT and PSI, the work/rest cycles of WBGT Index is not suitable for heat stress management. Therefore, in Persian Gulf weather, heat stress evaluation based on physiologic variables may have higher validity than WBGT index.

  6. A Vision Controlled Robot to Detect and Collect Fallen Hot Cobalt60 Capsules inside Wet Storage Pool of Cobalt60 Irradiators

    International Nuclear Information System (INIS)

    Solyman, A.E.M.

    2015-01-01

    In a typical irradiator that use radioactive cobalt-60 capsules source is one of the peaceful uses of atomic energy, it originated strategy in terms of its importance in the sterilization of medical products and food processing from bacteria and fungi before being exported. However, there are several well-known problems related to the fall of the cobalt-60 capsules inside the wet storage pool as a result of manufacturing defects, defects welds or a problem occurs in the vertical movement of the radioactive source rack. Therefore it is necessary to study this problem and solve it in a scientific way so as to keep the human as much as possible from radiation exposure, according to the principles of radiation protection and safety issued by the International Atomic Energy Agency. The present work considers the possibility to use a vision based control arm robot to collect fallen hot cobalt-60 capsules inside wet storage pool. A 5-DOF arm robot is designed and vision algorithms are established to pick the fallen capsule on the bottom surface of the storage pool, read the information printed on its edge (cap) and move it to a safe storage place. Two object detection approaches are studied; RGB-based filter and background subtraction technique. Vision algorithms and camera calibration are done using MATLAB/SIMULINK program. Robot arm forward and inverse kinematics are developed and programmed using an embedded micro controller system. Experiments show the validity of the proposed system and prove its success. The collecting process will be done without interference of operators, so radiation safety will be increased. The results showed camera calibration equations accuracy. And also the presence of vibrations in the hands of the movement of the robot and thus were seized motor rotation speed to 10 degrees per second to avoid these vibrations.This scientific application keeps the operators as much as possible from radiation exposure so it leads to increase radiation

  7. Single Mode Optical Fiber based Refractive Index Sensor using Etched Cladding

    OpenAIRE

    Kumar, Ajay; Gupta, Geeta; Mallik, Arun; Bhatnagar, Anuj

    2011-01-01

    The use of optical fiber for sensor applications is a topic of current interest. We report the fabrication of etched single mode optical fiber based refractive index sensor. Experiments are performed to determine the etch rate of fiber in buffered hydrofluoric acid, which can be high or low depending upon the temperature at which etching is carried out. Controlled wet etching of fiber cladding is performed using these measurements and etched fiber region is tested for refractive index sensing...

  8. Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

    International Nuclear Information System (INIS)

    Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

    2009-01-01

    This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

  9. Selective Oxidation and Reactive Wetting During Hot-Dip Galvanizing of a 1.0 pct Al-0.5 pct Si TRIP-Assisted Steel

    Science.gov (United States)

    Bellhouse, E. M.; McDermid, J. R.

    2012-07-01

    Selective oxidation and reactive wetting during continuous galvanizing were studied for a low-alloy transformation induced plasticity (TRIP)-assisted steel with 0.2 pct C, 1.5 pct Mn, 1.0 pct Al and 0.5 pct Si. Three process atmospheres were tested during annealing prior to galvanizing: 220 K (-53 °C) dew point (dp) N2-20 pct H2, 243 K (-30 °C) dp N2-5 pct H2 and 278 K (+5 °C) dp N2-5 pct H2. The process atmosphere oxygen partial pressure affected the oxide chemistry, morphology and thickness. For the 220 K (-53 °C) dp and 243 K (-30 °C) dp process atmospheres, film and nodule-type manganese, silicon and aluminum containing oxides were observed at the surface. For the 278 K (+5 °C) dp atmosphere, MnO was observed at the grain boundaries and as thicker localized surface films. Oxide morphology, thickness and chemistry affected reactive wetting, with complete wetting being observed for the 220 K (-53 °C) dp and 243 K (-30 °C) dp process atmospheres and incomplete reactive wetting being observed for the 278 K (+5 °C) dp atmosphere. Complete reactive wetting for the 220 K (-53 °C) dp and 243 K (-30 °C) dp process atmospheres was attributed to a combination of zinc bridging of oxides, aluminothermic reduction of surface oxides and wetting of the oxides. Incomplete wetting for the 278 K (+5 °C) dp atmosphere was attributed to localized thick MnO films.

  10. Ex-situ XPS-investigation of the interface between PE-CVD SiO{sub 2} and wet chemically etched MO-CVD epitaxial layers of In{sub 0.53}Ga{sub 0.47}As

    Energy Technology Data Exchange (ETDEWEB)

    Procop, M. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Wandel, K. [Humboldt-Universitaet, Berlin (Germany). Inst. fuer Festkoerperphysik; Verucchi, R. [Modena Univ. (Italy). Ist. di Fisica

    1995-11-01

    The As rich SiO{sub 2}/In{sub 0.53}Ga{sub 0.47}As interface which is produced by wet chemical etching before SiO{sub 2} deposition to improve the electronic properties of the interface has been studied. SiO{sub 2}-layers of about 10 to 20 nm thickness have been deposited in a plasma enhanced chemical vapour deposition (PECVD) reactor and then thinned down to about 4 to 3 nm by 1.5 keV Ar ion beam bombardment at grazing incidence (85 ) in the XPS analysis chamber. The photoelectron spectra show that an additional broadening of the In and As lines due to a possible ion beam damage can be neglected in case of a qualitative interpretation of the interface spectra. Moreover, TRIM simulations of the collision cascade reveal low damage production in the SiO{sub 2}/In{sub 0.53}Ga{sub 0.47}As interface region. Therefore such ex-situ XPS experiments allow a supervision of the interface chemistry after the fabrication process and an optimisation of the technology with regard to the etching solution and deposition conditions. The conservation or removal of the elemental arsenic and the oxidation of the semiconductor due to the SiO{sub 2} deposition are well reflected in the photoelectron spectra. (orig.)

  11. Nanoscale analysis of the influence of pre-oxidation on oxide formation and wetting behavior of hot-dip galvanized high strength steel

    International Nuclear Information System (INIS)

    Arndt, M.; Duchoslav, J.; Steinberger, R.; Hesser, G.; Commenda, C.; Samek, L.; Arenholz, E.

    2015-01-01

    Highlights: • Pre-oxidized hot-dip galvanized advanced high strength steel was examined. • The interface was analyzed in detail via high energy resolution Auger spectra. • Evidence for an aluminothermic reduction of the Mn oxide was found. • A new model for galvanizing high manganese steel was developed. - Abstract: Hot-dip galvanized (HDG) 2nd generation advanced high strength steel (AHSS), nano-TWIP (twinning induced plasticity) with 15.8 wt.% Mn, 0.79 wt.% C, was analyzed at the interface between steel and zinc by scanning Auger electron microscopy (AES) in order to confirm and improve an existing model of additional pre-oxidation treatment before annealing and immersion into the hot zinc bath. Furthermore these steel samples were fractured in the analysis chamber of the AES and analyzed without breaking vacuum. In these measurements the results of an aluminothermic reduction of the manganese and iron surface oxides on the steel could be confirmed by AES

  12. Plasma etching: Yesterday, today, and tomorrow

    Energy Technology Data Exchange (ETDEWEB)

    Donnelly, Vincent M.; Kornblit, Avinoam [Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204 (United States)

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  13. Plasma etching: Yesterday, today, and tomorrow

    International Nuclear Information System (INIS)

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-01-01

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices

  14. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

    International Nuclear Information System (INIS)

    Angermann, Heike

    2014-01-01

    Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D it (E), and density D it,min of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly based on

  15. Fabrication of etched facets and vertical couplers in InP for packaging and on-wafer test

    NARCIS (Netherlands)

    Lemos Alvares Dos Santos, Rui; D'Agostino, D.; Soares, F. M.; Haghighi, H. Rabbani; Williams, K. A.; Leijtens, X. J. M.

    2016-01-01

    In this letter, the fabrication and the characterization of angled and straight etched facets in InP-based technology are reported. In addition, we report on etched facets combined with coupler mirrors for vertical outcoupling, realized with a wet-etching process.

  16. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  17. Influence of Minor Alloying Elements on Selective Oxidation and Reactive Wetting of CMnSi TRIP Steel during Hot Dip Galvanizing

    Science.gov (United States)

    Cho, Lawrence; Kim, Myung Soo; Kim, Young Ha; De Cooman, Bruno C.

    2014-09-01

    The influence of the addition of minor alloying elements on the selective oxidation and the reactive wetting of CMnSi transformation-induced plasticity (TRIP) steels was studied by means of galvanizing simulator tests. Five TRIP steels containing small alloying additions of Cr, Ni, Ti, Cu, and Sn were investigated. After intercritical annealing (IA) at 1093 K (820 °C) in a N2 + 5 pct H2 gas atmosphere with a dew point of 213 K (-60 °C), two types of oxides were formed on the strip surface: Mn-rich xMnO·SiO2 ( x > 1.5) and Si-rich xMnO·SiO2 ( x galvanizing. The addition of a small amount of Sn is shown to significantly decrease the density of Zn-coating defects on CMnSi TRIP steels.

  18. Reactive ion etching of microphotonic structures

    International Nuclear Information System (INIS)

    Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

    2004-01-01

    Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

  19. Effect of Hydrofluoric Acid Etching Time on Titanium Topography, Chemistry, Wettability, and Cell Adhesion.

    Directory of Open Access Journals (Sweden)

    R Zahran

    Full Text Available Titanium implant surface etching has proven an effective method to enhance cell attachment. Despite the frequent use of hydrofluoric (HF acid, many questions remain unresolved, including the optimal etching time and its effect on surface and biological properties. The objective of this study was to investigate the effect of HF acid etching time on Ti topography, surface chemistry, wettability, and cell adhesion. These data are useful to design improved acid treatment and obtain an improved cell response. The surface topography, chemistry, dynamic wetting, and cell adhesiveness of polished Ti surfaces were evaluated after treatment with HF acid solution for 0, 2; 3, 5, 7, or 10 min, revealing a time-dependent effect of HF acid on their topography, chemistry, and wetting. Roughness and wetting increased with longer etching time except at 10 min, when roughness increased but wetness decreased. Skewness became negative after etching and kurtosis tended to 3 with longer etching time. Highest cell adhesion was achieved after 5-7 min of etching time. Wetting and cell adhesion were reduced on the highly rough surfaces obtained after 10-min etching time.

  20. Controlled ion track etching

    Science.gov (United States)

    George, J.; Irkens, M.; Neumann, S.; Scherer, U. W.; Srivastava, A.; Sinha, D.; Fink, D.

    2006-03-01

    It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e . by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given.

  1. Plasma etching of patterned tungsten

    International Nuclear Information System (INIS)

    Franssila, S.

    1993-01-01

    Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed. (orig.)

  2. [Wet work].

    Science.gov (United States)

    Kieć-Swierczyńska, Marta; Chomiczewska, Dorota; Krecisz, Beata

    2010-01-01

    Wet work is one of the most important risk factors of occupational skin diseases. Exposure of hands to the wet environment for more than 2 hours daily, wearing moisture-proof protective gloves for a corresponding period of time or necessity to wash hands frequently lead to the disruption of epidermal stratum corneum, damage to skin barrier function and induction of irritant contact dermatitis. It may also promote penetration of allergens into the skin and increase the risk of sensitization to occupational allergens. Exposure to wet work plays a significant role in occupations, such as hairdressers and barbers, nurses and other health care workers, cleaning staff, food handlers and metalworkers. It is more common among women because many occupations involving wet work are female-dominated. The incidence of wet-work-induced occupational skin diseases can be reduced by taking appropriate preventive measures. These include identification of high-risk groups, education of workers, organization of work enabling to minimize the exposure to wet work, use of personal protective equipment and skin care after work.

  3. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  4. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  5. Etching method employing radiation

    International Nuclear Information System (INIS)

    Chapman, B.N.; Winters, H.F.

    1982-01-01

    This invention provides a method for etching a silicon oxide, carbide, nitride, or oxynitride surface using an electron or ion beam in the presence of a xenon or krypton fluoride. No additional steps are required after exposure to radiation

  6. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  7. Device fabrication by plasma etching

    International Nuclear Information System (INIS)

    Mogab, C.J.

    1980-01-01

    Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect-the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis

  8. Selective dry etching of silicon containing anti-reflective coating

    Science.gov (United States)

    Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

    2018-03-01

    Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic

  9. The chemical and electrochemical anisotropic etching of silicon

    International Nuclear Information System (INIS)

    Dixon, E.

    1997-06-01

    The success of silicon IC technology in producing a wide variety of microstructures relies heavily on the orientation dependant etching observed for silicon in alkaline media. Despite the rapid growth of this industry, the chemical and electrochemical mechanisms by which anisotropic etching occurs remain poorly understood. The most common etchant systems in use are ethylenediamine-pyrocatechol-water (EPW) and potassium hydroxide-isopropanol-water (KOH-IPA), and whilst these systems are highly plane selective they each have distinct disadvantages. The occurrence of inhomogeneities such as micropyramids and pits on the surface of etched substrates is a particularly disadvantageous characteristic of many alkaline etching systems. A complete understanding of the chemical and electrochemical anisotropic etching mechanisms is essential in order to obtain more reproducible etching, improved etch rate ratios and the development of more reliable etching baths. Wet chemical etching experiments to evaluate the etching rates for the different alkali metal cations have shown that similar etch rates are observed for LiOH, NaOH and KOH but those of RbOH and CsOH are significantly lower. The presence of impurities was shown to worsen the etched wafer's surface finish obtained in these etching baths. Additives have been shown to dramatically improve the surface finish with the presence of IPA in conjunction with etchant oxygenation virtually eliminating all surface defects. Electrochemical experiments were used to assess the electrochemical behaviour of Si p-(100) in of a wide variety of etchants and variations were seen according to the etchant used. A.C impedance spectroscopy showed a variation in the flat-band potential (V FB ) according to alkali metal hydroxide etchant used. These trends were similarly observed in the presence of isopropanol. Oxygenation was observed to reproducibly alter the flat-band potentials. A.c impedance spectroscopic studies additionally confirmed the

  10. Liquid droplet sensing using twisted optical fiber couplers fabricated by hydrofluoric acid flow etching

    Science.gov (United States)

    Son, Gyeongho; Jung, Youngho; Yu, Kyoungsik

    2017-04-01

    We report a directional-coupler-based refractive index sensor and its cost-effective fabrication method using hydrofluoric acid droplet wet-etching and surface-tension-driven liquid flows. The proposed fiber sensor consists of a pair of twisted tapered optical fibers with low excess losses. The fiber cores in the etched microfiber region are exposed to the surrounding medium for efficient interaction with the guided light. We observe that the etching-based low-loss fiber-optic sensors can measure the water droplet volume by detecting the refractive index changes of the surrounding medium around the etched fiber core region.

  11. Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection

    Science.gov (United States)

    Qi, Zhiyang; Zhai, Yusheng; Wen, Long; Wang, Qilong; Chen, Qin; Iqbal, Sami; Chen, Guangdian; Xu, Ji; Tu, Yan

    2017-07-01

    The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10-5 A cm-2. The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.

  12. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  13. Ethanol Wet-bonding Technique Sensitivity Assessed by AFM

    OpenAIRE

    Osorio, E.; Toledano, M.; Aguilera, F.S.; Tay, F.R.; Osorio, R.

    2010-01-01

    In ethanol wet bonding, water is replaced by ethanol to maintain dehydrated collagen matrices in an extended state to facilitate resin infiltration. Since short ethanol dehydration protocols may be ineffective, this study tested the null hypothesis that there are no differences in ethanol dehydration protocols for maintaining the surface roughness, fibril diameter, and interfibrillar spaces of acid-etched dentin. Polished human dentin surfaces were etched with phosphoric acid and water-rinsed...

  14. Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

    Science.gov (United States)

    Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

    2017-12-01

    Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

  15. Etching of Niobium Sample Placed on Superconducting Radio Frequency Cavity Surface in Ar/CL2 Plasma

    International Nuclear Information System (INIS)

    Upadhyay, Janardan; Phillips, Larry; Valente, Anne-Marie

    2011-01-01

    Plasma based surface modification is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. It has been proven with flat samples that the bulk Niobium (Nb) removal rate and the surface roughness after the plasma etchings are equal to or better than wet etching processes. To optimize the plasma parameters, we are using a single cell cavity with 20 sample holders symmetrically distributed over the cell. These holders serve the purpose of diagnostic ports for the measurement of the plasma parameters and for the holding of the Nb sample to be etched. The plasma properties at RF (100 MHz) and MW (2.45 GHz) frequencies are being measured with the help of electrical and optical probes at different pressures and RF power levels inside of this cavity. The niobium coupons placed on several holders around the cell are being etched simultaneously. The etching results will be presented at this conference.

  16. Etching of Niobium Sample Placed on Superconducting Radio Frequency Cavity Surface in Ar/CL2 Plasma

    Energy Technology Data Exchange (ETDEWEB)

    Janardan Upadhyay, Larry Phillips, Anne-Marie Valente

    2011-09-01

    Plasma based surface modification is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. It has been proven with flat samples that the bulk Niobium (Nb) removal rate and the surface roughness after the plasma etchings are equal to or better than wet etching processes. To optimize the plasma parameters, we are using a single cell cavity with 20 sample holders symmetrically distributed over the cell. These holders serve the purpose of diagnostic ports for the measurement of the plasma parameters and for the holding of the Nb sample to be etched. The plasma properties at RF (100 MHz) and MW (2.45 GHz) frequencies are being measured with the help of electrical and optical probes at different pressures and RF power levels inside of this cavity. The niobium coupons placed on several holders around the cell are being etched simultaneously. The etching results will be presented at this conference.

  17. Overview Of Dry-Etch Techniques

    Science.gov (United States)

    Salzer, John M.

    1986-08-01

    With pattern dimensions shrinking, dry methods of etching providing controllable degrees of anisotropy become a necessity. A number of different configurations of equipment - inline, hex, planar, barrel - have been offered, and within each type, there are numerous significant variations. Further, each specific type of machine must be perfected over a complex, interactive parameter space to achieve suitable removal of various materials. Among the most critical system parameters are the choice of cathode or anode to hold the wafers, the chamber pressure, the plasma excitation frequency, and the electrode and magnetron structures. Recent trends include the use of vacuum load locks, multiple chambers, multiple electrodes, downstream etching or stripping, and multistep processes. A major percentage of etches in production handle the three materials: polysilicon, oxide and aluminum. Recent process developments have targeted refractory metals, their silicides, and with increasing emphasis, silicon trenching. Indeed, with new VLSI structures, silicon trenching has become the process of greatest interest. For stripping, dry processes provide advantages other than anisotropy. Here, too, new configurations and methods have been introduced recently. While wet processes are less than desirable from a number of viewpoints (handling, safety, disposal, venting, classes of clean room, automatability), dry methods are still being perfected as a direct, universal replacement. The paper will give an overview of these machine structures and process solutions, together with examples of interest. These findings and the trends discussed are based on semiannual survey of manufacturers and users of the various types of equipment.

  18. Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

    Science.gov (United States)

    Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

    2018-04-27

    Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

  19. Formative Assessment Probes: Wet Jeans

    Science.gov (United States)

    Keeley, Page

    2015-01-01

    Picture a wet towel or a puddle of water on a hot, sunny day. An hour later, the towel is dry and the puddle no longer exists. What happened to the water? Where did it go? These are questions that reveal myriad interesting student ideas about evaporation and the water cycle--ideas that provide teachers with a treasure trove of data they can use to…

  20. Anisotropic etching of silicon for application in micro machine using plasma of SF6/CH4/O2/Ar and SF6/CF4/O2/Ar

    International Nuclear Information System (INIS)

    Reyes B, C.; Moshkalyov, S.A.; Swart, J.W.

    2004-01-01

    We investigated the reactive ion etching of silicon using SF 6 /CH 4 (CF 4 )/O 2 /Ar gas mixtures containing fluorine for MEMS applications. Etch rates and anisotropy of etch profiles were examined as a function of gas composition, material of electrode, and RF power. Etch depths were measured using a profilometers, and etch profiles were analyzed by scanning electron microscope. As a mask material, an aluminium film deposited by evaporation, was used. High anisotropy of etching of 0.95 was achieved at etch depths up to 20-30 micrometers and etch rates of approximately 0.3-0.6 μm/min. Highly anisotropic etching is based on a mechanism that enhance the ion bombarding and protects the sidewalls due to polymerization and/or oxidation mechanisms in order to avoid the lateral etch. However, under the anisotropic etching conditions, considerable damages of the etched surfaces (roughness formation), were observed. After etching experiments, wet / dry cleaning procedures were applied to remove surface residues resulting from the reactive ion etching and to improve the etched surface morphology. (Author)

  1. Metal-assisted etch combined with regularizing etch

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

    2018-03-06

    In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

  2. Development of etched nuclear tracks

    International Nuclear Information System (INIS)

    Somogyi, G.

    1980-01-01

    The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotropic and anisotropic bulk etching as well as for thick and thin detectors. It is summarized how one can calculate the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, track profile and track contour. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (orig.)

  3. Development of etched nuclear tracks

    International Nuclear Information System (INIS)

    Somogyi, G.

    1979-01-01

    The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotopic and unisotropic bulk etching as well as for thick and thin detectors. It is summarized how the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, the track profile and the track contour can be calculated. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (author)

  4. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Angermann, Heike, E-mail: angermann@helmholtz-berlin.de

    2014-09-01

    Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D{sub it}(E), and density D{sub it,min} of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly

  5. Optical diagnostics for plasma etching

    NARCIS (Netherlands)

    Bisschops, T.H.J.; Kroesen, G.M.W.; Veldhuizen, van E.M.; de Zeeuw, C.J.H.; Timmermans, C.J.

    1985-01-01

    Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer etch reactor. Results of UV-visible spectroscopy and IR absorption spectroscopy, indicating different mol. species and their densities are presented. The construction of an interferometer to det. the

  6. Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

    Energy Technology Data Exchange (ETDEWEB)

    Grégoire, Geneviève, E-mail: genevieve.gregoire@univ-tlse3.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062 Toulouse (France); Sharrock, Patrick, E-mail: patrick.sharrock@gmail.com [CNRS UMR 5302, University Toulouse III, Mines-Albi, 81013 Albi (France); Prigent, Yann, E-mail: prigent@chimie.ups-tlse.fr [Institut de Chimie de Toulouse (ICT) – FR 2599, Faculté des Sciences et de l' Ingénierie, University Toulouse III, 31062 Toulouse (France)

    2016-09-01

    A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

  7. Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

    International Nuclear Information System (INIS)

    Grégoire, Geneviève; Sharrock, Patrick; Prigent, Yann

    2016-01-01

    A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

  8. Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

    Science.gov (United States)

    Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

    2017-04-01

    Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the

  9. Etch bias inversion during EUV mask ARC etch

    Science.gov (United States)

    Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

    2017-07-01

    The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

  10. Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

    Science.gov (United States)

    Lee, Kiwon

    2018-04-01

    Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

  11. Hot Flashes

    Science.gov (United States)

    Hot flashes Overview Hot flashes are sudden feelings of warmth, which are usually most intense over the face, neck and chest. Your skin might redden, as if you're blushing. Hot flashes can also cause sweating, and if you ...

  12. HOT 2015

    DEFF Research Database (Denmark)

    Hannibal, Sara Stefansen

    2016-01-01

    HOT samler og formidler 21 literacykyndiges bud på, hvad der er hot, og hvad der bør være hot inden for literacy – og deres begrundelser for disse bud.......HOT samler og formidler 21 literacykyndiges bud på, hvad der er hot, og hvad der bør være hot inden for literacy – og deres begrundelser for disse bud....

  13. Phase change materials and the perception of wetness

    NARCIS (Netherlands)

    Bergmann Tiest, W.M.; Kosters, N.D.; Kappers, A.M.L.; Daanen, H.A.M.

    2012-01-01

    Phase change materials (PCMs) are increasingly incorporated in textiles in order to serve as a thermal buffer when humans change from a hot to a cold environment and the reverse. Due to the absence of wetness sensors in the skin, cooling of the skin may be perceived as a sensation of wetness instead

  14. Phase Change Materials and the perception of wetness.

    NARCIS (Netherlands)

    Bergmann Tiest, W.M.; Kappers, A.M.L.; Daanen, H.A.M.

    2012-01-01

    Phase change materials (PCMs) are increasingly incorporated in textiles in order to serve as a thermal buffer when humans change from a hot to a cold environment and the reverse. Due to the absence of wetness sensors in the skin, cooling of the skin may be perceived as a sensation of wetness instead

  15. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-01-01

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during

  16. Thermodynamics of nuclear track chemical etching

    Science.gov (United States)

    Rana, Mukhtar Ahmed

    2018-05-01

    This is a brief paper with new and useful scientific information on nuclear track chemical etching. Nuclear track etching is described here by using basic concepts of thermodynamics. Enthalpy, entropy and free energy parameters are considered for the nuclear track etching. The free energy of etching is determined using etching experiments of fission fragment tracks in CR-39. Relationship between the free energy and the etching temperature is explored and is found to be approximately linear. The above relationship is discussed. A simple enthalpy-entropy model of chemical etching is presented. Experimental and computational results presented here are of fundamental interest in nuclear track detection methodology.

  17. In situ reflectivity investigations of solid/liquid interface during laser backside etching

    International Nuclear Information System (INIS)

    Boehme, R.; Otto, T.; Zimmer, K.

    2006-01-01

    In situ reflectivity measurements of the solid/liquid interface with a pump-probe setup were performed during laser-induced backside wet etching (LIBWE) of fused silica with KrF excimer laser using toluene as absorbing liquid. The intensity, the temporal shape, and the duration of the reflected light measured in dependence on the laser fluence are discussed referring to the surface modification and the bubble formation. The vaporisation of the superheated liquid at the solid interface causes a considerable increase of the reflectivity and gives information about the bubble lifetime. The alterations of the reflectivity after bubbles collapse can be explained with the changed optical properties due to surface modifications of the solid surface. Comparative studies of the reflectivity at different times and the etch rate behaviour in dependence on the laser fluence show that the in situ measured surface modification begins just at the etch threshold fluence and correlates further with etch rate behaviour and the etched surface appearance. The already observed surface modification at LIBWE due to a carbon deposition and structural changes of the near surface region are approved by the changes of the interface reflectivity and emphasizes the importance of the modified surface region in the laser-induced backside wet etching process

  18. Suitability of N2 plasma for the RIE etching of thin Ag layers

    International Nuclear Information System (INIS)

    Hrkut, P.; Matay, L.; Kostic, I.; Bencurova, A.; Konecnikova, A.; Nemec, P.; Andok, R.; Hacsik, S.

    2013-01-01

    Silver layers of 48 nm thickness were evaporated using EB PVD on Si wafers. The masking resist layers were spin-coated and patterned by the EBDW lithography on the ZBA 21 (20 keV) (Carl-Zeiss, Jena; currently Vistec, Ltd.) variable shaped e-beam pattern generator in II SAS. In order to check the etching process in N 2 , we covered a part of the samples containing Ag with a layer of various resists. The samples were dried on a hot-plate and RIE etched in SCM 600 (1 Pa; 20 sccm; 500 W). After 8 minutes the non-masked Ag layer was completely etched away, what testified suitability of N 2 as an etching gas. Also the etch time of 4 minutes showed to be sufficient for etching through the Ag layer. In order to optimize the etching process it was necessary to estimate the etch-rate (E.R.) of suitable resist layers and of the silver layer. The (authors)

  19. Real-Time Observation of Carbon Nanotube Etching Process Using Polarized Optical Microscope.

    Science.gov (United States)

    Zhao, Qiuchen; Yao, Fengrui; Wang, Zequn; Deng, Shibin; Tong, Lianming; Liu, Kaihui; Zhang, Jin

    2017-08-01

    Controllable synthesis of carbon nanotubes (CNTs) is of great importance in its further application, which attracts broad attention. As growth and etching are the two sides in the process of material crystallography and the control of the competition between them forms the foundation for modern technology of materials design and manufacture, the understanding on etching process of carbon nanotubes is still very unclear because technically it is of great challenge to characterize the dynamics in such small one-dimensional (1D) scale. Here the real-time investigation on the etching process of CNTs is reported, by the hot-wall chemical reactor equipped with a polarized optical microscope. It is discovered that the CNT etching behavior in air is totally of random, including the etching sites, termination sites, and structure dependence. Combining with the dynamic simulation, it is revealed that the random behavior reflects the unique "self-termination" phenomenon. A structure-independent etching propagation barrier of 2.4 eV is also obtained, which indicates that the etching propagation process still follows the conventional Kinetic Wulff construction theory. The results represent the new knowledge on the etching process in carbon nanotube and can contribute to its selective enrichment. Furthermore, the "self-termination" phenomenon may be a universal behavior in 1D process. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Modeled Wet Nitrate Deposition

    Data.gov (United States)

    U.S. Environmental Protection Agency — Modeled data on nitrate wet deposition was obtained from Dr. Jeff Grimm at Penn State Univ. Nitrate wet depostion causes acidification and eutrophication of surface...

  1. Introduction to wetting phenomena

    International Nuclear Information System (INIS)

    Indekeu, J.O.

    1995-01-01

    In these lectures the field of wetting phenomena is introduced from the point of view of statistical physics. The phase transition from partial to complete wetting is discussed and examples of relevant experiments in binary liquid mixtures are given. Cahn's concept of critical-point wetting is examined in detail. Finally, a connection is drawn between wetting near bulk criticality and the universality classes of surface critical phenomena. (author)

  2. Haptic perception of wetness

    NARCIS (Netherlands)

    Bergmann Tiest, W.M.; Kosters, N.D.; Daanen, H.A.M.; Kappers, A.M.L.

    2011-01-01

    The sensation of wetness is well-known but barely investigated. There are no specific wetness receptors in the skin, but the sensation is mediated by temperature and pressure perception. In our study, we have measured discrimination thresholds for the haptic perception of wetness of three di erent

  3. Haptic perception of wetness

    NARCIS (Netherlands)

    Bergmann Tiest, W.M.; Dolfine Kosters, N.; Daanen, h.a.m.; Kappers, A.M.L.

    2012-01-01

    In daily life, people interact with textiles of different degrees of wetness, but little is known about the me-chanics of wetness perception. This paper describes an experiment with six conditions regarding haptic dis-crimination of the wetness of fabrics. Three materials were used: cotton wool,

  4. Haptic perception of wetness

    NARCIS (Netherlands)

    Bergmann Tiest, W.M.; Kosters, N.D.; Kappers, Astrid M.L.; Daanen, H.A.M.

    2012-01-01

    In daily life, people interact with textiles of different degrees of wetness, but little is known about the mechanics of wetness perception. This paper describes an experiment with six conditions regarding haptic discrimination of the wetness of fabrics. Three materials were used: cotton wool,

  5. Deep reactive ion etching of fused silica using a single-coated soft mask layer for bio-analytical applications

    International Nuclear Information System (INIS)

    Ray, Tathagata; Zhu, Haixin; Meldrum, Deirdre R

    2010-01-01

    In this note, we present our results from process development and characterization of reactive ion etching (RIE) of fused silica using a single-coated soft masking layer (KMPR® 1025, Microchem Corporation, Newton, MA). The effects of a number of fluorine-radical-based gaseous chemistries, the gas flow rate, RF power and chamber pressure on the etch rate and etching selectivity of fused silica were studied using factorial experimental designs. RF power and pressure were found to be the most important factors in determining the etch rate. The highest fused silica etch rate obtained was about 933 Å min −1 by using SF 6 -based gas chemistry, and the highest etching selectivity between the fused silica and KMPR® 1025 was up to 1.2 using a combination of CF 4 , CHF 3 and Ar. Up to 30 µm deep microstructures have been successfully fabricated using the developed processes. The average area roughness (R a ) of the etched surface was measured and results showed it is comparable to the roughness obtained using a wet etching technique. Additionally, near-vertical sidewalls (with a taper angle up to 85°) have been obtained for the etched microstructures. The processes developed here can be applied to any application requiring fabrication of deep microstructures in fused silica with near-vertical sidewalls. To our knowledge, this is the first note on deep RIE of fused silica using a single-coated KMPR® 1025 masking layer and a non-ICP-based reactive ion etcher. (technical note)

  6. PREFACE: Dynamics of wetting Dynamics of wetting

    Science.gov (United States)

    Grest, Gary S.; Oshanin, Gleb; Webb, Edmund B., III

    2009-11-01

    Capillary phenomena associated with fluids wetting other condensed matter phases have drawn great scientific interest for hundreds of years; consider the recent bicentennial celebration of Thomas Young's paper on equilibrium contact angles, describing the geometric shape assumed near a three phase contact line in terms of the relevant surface energies of the constituent phases [1]. Indeed, nearly a century has passed since the seminal papers of Lucas and Washburn, describing dynamics of capillary imbibition [2, 3]. While it is generally appreciated that dynamics of fluid wetting processes are determined by the degree to which a system is out of capillary equilibrium, myriad complications exist that challenge the fundamental understanding of dynamic capillary phenomena. The topic has gathered much interest from recent Nobel laureate Pierre-Gilles de Gennes, who provided a seminal review of relevant dissipation mechanisms for fluid droplets spreading on solid surfaces [4] Although much about the dynamics of wetting has been revealed, much remains to be learned and intrinsic technological and fundamental interest in the topic drives continuing high levels of research activity. This is enabled partly by improved experimental capabilities for resolving wetting processes at increasingly finer temporal, spatial, and chemical resolution. Additionally, dynamic wetting research advances via higher fidelity computational modeling capabilities, which drive more highly refined theory development. The significance of this topic both fundamentally and technologically has resulted in a number of reviews of research activity in wetting dynamics. One recent example addresses the evaluation of existing wetting dynamics theories from an experimentalist's perspective [5]. A Current Opinion issue was recently dedicated to high temperature capillarity, including dynamics of high temperature spreading [6]. New educational tools have recently emerged for providing instruction in wetting

  7. Laser etching as an alternative

    International Nuclear Information System (INIS)

    Dreyfus, R.W.; Kelly, R.

    1989-01-01

    Atoms and molecules are removed from surfaces by intense laser beams. This fact has been known almost since the discovery of the laser. Within the present overall area of interest, namely understanding ion-beam-induced sputtering, it is equally important both to contrast laser etching to ion sputtering and to understand the underlying physics taking place during laser etching. Beyond some initial broad observations, the specific discussion is limited to, and aimed at, two areas: (i) short wavelength, UV, laser-pulse effects and (ii) energy fluences sufficiently small that only monolayers (and not microns) of material are removed per pulse. 38 refs.; 13 figs.; 5 tabs

  8. Introducing etch kernels for efficient pattern sampling and etch bias prediction

    Science.gov (United States)

    Weisbuch, François; Lutich, Andrey; Schatz, Jirka

    2018-01-01

    Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

  9. Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

    DEFF Research Database (Denmark)

    Stöhr, Frederik; Michael-Lindhard, Jonas; Hübner, Jörg

    2015-01-01

    This article describes the realization of complex high-aspect ratio silicon structures with feature dimensions from 100 lm to 100nm by deep reactive ion etching using the Bosch process. As the exact shape of the sidewall profiles can be crucial for the proper functioning of a device, the authors...... of the sacrificial structures was accomplished by thermal oxidation and subsequent selective wet etching. The effects of the dimensions and relative placement of sacrificial walls and pillars on the etching result were determined through systematic experiments. The authors applied this process for exact sidewall...

  10. Performance test of wet type decontamination device

    International Nuclear Information System (INIS)

    Lee, E. P.; Kim, E. G.; Min, D. K.; Jun, Y. B.; Lee, H. K.; Seu, H. S.; Kwon, H. M.; Hong, K.P.

    2003-01-01

    The intervention area located at rear hot cell can be contaminated by hot cell maintenance work. For effective decontamination of the intervention floor a wet type decontamination device was developed. The device was assembled with a brush rotating part, a washing liquid supplying part, an intake part for recovering contaminated liquid and a device moving cart part. The device was made of stainless steel for easy decontamination and corrosion resistance. The function test carried out at intervention area of the PIE facility showed good performance

  11. Process margin enhancement for 0.25-μm metal etch process

    Science.gov (United States)

    Lee, Chung Y.; Ma, Wei Wen; Lim, Eng H.; Cheng, Alex T.; Joy, Raymond; Ross, Matthew F.; Wong, Selmer S.; Marlowe, Trey

    2000-06-01

    This study evaluates electron beam stabilization of UV6, a positive tone Deep-UV (DUV) resist from Shipley, for a 0.25 micrometer metal etch application. Results are compared between untreated resist and resist treated with different levels of electron beam stabilization. The electron beam processing was carried out in an ElectronCureTM flood electron beam exposure system from Honeywell International Inc., Electron Vision. The ElectronCureTM system utilizes a flood electron beam source which is larger in diameter than the substrate being processed, and is capable of variable energy so that the electron range is matched to the resist film thickness. Changes in the UV6 resist material as a result of the electron beam stabilization are monitored via spectroscopic ellipsometry for film thickness and index of refraction changes and FTIR for analysis of chemical changes. Thermal flow stability is evaluated by applying hot plate bakes of 150 degrees Celsius and 200 degrees Celsius, to patterned resist wafers with no treatment and with an electron beam dose level of 2000 (mu) C/cm2. A significant improvement in the thermal flow stability of the patterned UV6 resist features is achieved with the electron beam stabilization process. Etch process performance of the UV6 resist was evaluated by performing a metal pattern transfer process on wafers with untreated resist and comparing these with etch results on wafers with different levels of electron beam stabilization. The etch processing was carried out in an Applied Materials reactor with an etch chemistry including BCl3 and Cl2. All wafers were etched under the same conditions and the resist was treated after etch to prevent further erosion after etch but before SEM analysis. Post metal etch SEM cross-sections show the enhancement in etch resistance provided by the electron beam stabilization process. Enhanced process margin is achieved as a result of the improved etch resistance, and is observed in reduced resist side

  12. On the long standing question of nuclear track etch induction time: Surface-cap model

    International Nuclear Information System (INIS)

    Rana, Mukhtar Ahmed

    2008-01-01

    Using a systematic set of experiments, nuclear track etch induction time measurements in a widely used CR-39 detector were completed for accessible track-forming particles (fission fragments, 5.2 MeV alpha particles and 5.9 MeV antiprotons). Results of the present work are compared with appropriately selected published results. The possibility of the use of etch induction time for charged particle identification is evaluated. Analysis of experimental results along with the use of well-established theoretical concepts yielded a model about delay in the start of chemical etching of nuclear tracks. The suggested model proposes the formation of a surface-cap (top segment) in each nuclear track consisting of chemically modified material with almost same or even higher resistance to chemical etching compared with bulk material of the track detector. Existing track formation models are reviewed very briefly, which provide one of the two bases of the proposed model. The other basis of the model is the general behavior of hot or energised material having a connection with an environment containing a number of species like ordinary air. Another reason for the delay in the start of etching is suggested as the absence of localization of etching atoms/molecules, which is present during etching at depth along the latent track

  13. Influence of chemistry on wetting dynamics of nanotextured hydrophobic surfaces.

    Science.gov (United States)

    Di Mundo, Rosa; Palumbo, Fabio; d'Agostino, Riccardo

    2010-04-06

    In this work, the role of a chemical parameter, such as the degree of fluorination, on the wetting behavior of nanotextured hydrophobic surfaces is investigated. Texture and chemistry tuning of the surfaces has been accomplished with single batch radiofrequency low-pressure plasma processes. Polystyrene substrates have been textured by CF(4) plasma etching and subsequently covered by thin films with a tunable F-to-C ratio, obtained in discharges fed with C(4)F(8)-C(2)H(4). Measurements of wetting dynamics reveal a regime transition from adhesive-hydrophobic to slippery-superhydrophobic, i.e., from wet to non wet states, as the F-to-C rises at constant topography. Such achievements are strengthened by calculation of the solid fraction of surface water contact area applying Cassie-Baxter advancing and receding equations to water contact angle data of textured and flat reference surfaces.

  14. Wet Gas Airfoil Analyses

    OpenAIRE

    Larsen, Tarjei Thorrud

    2011-01-01

    Subsea wet gas compression renders new possibilities for cost savings and enhanced gas recovery on existing gas wells. Technology like this opens to make traditional offshore processing plants redundant. With new technology, follows new challenges. Multiphase flows is regarded as a complex field of study, and increased knowledge on the fundamental mechanisms regarding wet gas flow is of paramount importance to the efficiency and stability of the wet gas compressor. The scope of this work was ...

  15. Wetted foam liquid fuel ICF target experiments

    International Nuclear Information System (INIS)

    Olson, R E; Leeper, R J; Yi, S A; Kline, J L; Zylstra, A B; Peterson, R R; Shah, R; Braun, T; Biener, J; Kozioziemski, B J; Sater, J D; Biener, M M; Hamza, A V; Nikroo, A; Hopkins, L Berzak; Ho, D; LePape, S; Meezan, N B

    2016-01-01

    We are developing a new NIF experimental platform that employs wetted foam liquid fuel layer ICF capsules. We will use the liquid fuel layer capsules in a NIF sub-scale experimental campaign to explore the relationship between hot spot convergence ratio (CR) and the predictability of hot spot formation. DT liquid layer ICF capsules allow for flexibility in hot spot CR via the adjustment of the initial cryogenic capsule temperature and, hence, DT vapor density. Our hypothesis is that the predictive capability of hot spot formation is robust and 1D-like for a relatively low CR hot spot (CR∼15), but will become less reliable as hot spot CR is increased to CR>20. Simulations indicate that backing off on hot spot CR is an excellent way to reduce capsule instability growth and to improve robustness to low-mode x-ray flux asymmetries. In the initial experiments, we will test our hypothesis by measuring hot spot size, neutron yield, ion temperature, and burn width to infer hot spot pressure and compare to predictions for implosions with hot spot CR's in the range of 12 to 25. Larger scale experiments are also being designed, and we will advance from sub-scale to full-scale NIF experiments to determine if 1D-like behavior at low CR is retained as the scale-size is increased. The long-term objective is to develop a liquid fuel layer ICF capsule platform with robust thermonuclear burn, modest CR, and significant α-heating with burn propagation. (paper)

  16. Neutron dosimetry using electrochemical etching

    International Nuclear Information System (INIS)

    Su, S.J.; Stillwagon, G.B.; Morgan, K.Z.

    1977-01-01

    Registration of α-tracks and fast-neutron-induced recoils tracks by the electrochemical etching technique as applied to sensitive polymer foils (e.g., polycarbonate) provides a simple, sensitive and inexpensive means of fast neutron personnel dosimetry as well as a valuable research tool for microdosimetry. When tracks were amplified by our electrochemical technique and the etching results compared with conventional etching technique a striking difference was noted. The electrochemically etched tracks were of much larger diameter (approx. 100 μm) and gave superior contrast. Two optical devices--the transparency projector and microfiche reader--were adapted to facilitate counting of the tracks appearing on our polycarbonate foils. The projector produced a magnification of 14X for a screen to projector distance of 5.0 meter and read's magnification was 50X. A Poisson distribution was determined for the number of tracks located in a particular area of the foil and experimentally verified by random counting of quarter sections of the microfiche reader screen. Finally, in an effort to determine dose equivalent (rem), a conversion factor is being determined by finding the sensitivity response (tracks/neutron) of recoil particle induced tracks as a function of monoenergetic fast neutrons and comparing results with those obtained by others

  17. Neutron-induced modifications on Hostaphan and Makrofol wettability and etching behaviors

    International Nuclear Information System (INIS)

    El-Sayed, D.; El-Saftawy, A.A.; Abd El Aal, S.A.; Fayez-Hassan, M.; Al-Abyad, M.; Mansour, N.A.; Seddik, U.

    2017-01-01

    Understanding the nature of polymers used as nuclear detectors is crucial to enhance their behaviors. In this work, the induced modifications in wettability and etching properties of Hostaphan and Makrofol polymers irradiated by different fluences of thermal neutrons are investigated. The wetting properties are studied by contact angle technique which showed the spread out of various liquids over the irradiated polymers surfaces (wettability enhanced). This wetting behavior is attributed to the induced changes in surface free energy (SFE), morphology, roughness, structure, hardness, and chemistry. SFE values are calculated by three different models and found to increase after neutrons irradiation associated with differences depending on the used model. These differences result from the intermolecular interactions in the liquid/polymer system. Surface morphology and roughness of both polymers showed drastic changes after irradiation. Additionally, surface structure and hardness of pristine and irradiated polymers were discussed and correlated to the surface wettability improvements. The changes in surface chemistry are examined by Fourier transform infrared spectroscopy (FTIR), which indicate an increase in surface polarity due to the formation of polar groups. The irradiated polymers etching characteristics and activation energies are discussed as well. Lastly, it is evident that thermal neutrons show efficiency in improving surface wettability and etching properties of Hostaphan and Makrofol in a controlled way. - Highlights: • Neutrons radiation used to modify Hostaphan and Makrofol polymer wetting behavior. • Tailoring surface structure, topography and chemistry control its wettability. • Bulk etching rate and activation energy improved after neutrons irradiation.

  18. Effect of ethanol-wet-bonding technique on resin–enamel bonds

    Directory of Open Access Journals (Sweden)

    Muhammet Kerim Ayar

    2014-03-01

    Conclusion: The ethanol-wet-bonding technique may increase the bond strength of commercial adhesives to enamel. The chemical composition of the adhesives can affect the bond strength of adhesives when bonding to acid-etched enamel, using the ethanol-wet-bonding technique. Some adhesive systems used in the present study may simultaneously be applied to enamel and dentin using ethanol-wet-bonding. Furthermore, deploying ethanol-wet-bonding for the tested commercial adhesives to enamel can increase the adhesion abilities of these adhesives to enamel.

  19. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    Science.gov (United States)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  20. Fabrication of Ni stamp with high aspect ratio, two-leveled, cylindrical microstructures using dry etching and electroplating

    DEFF Research Database (Denmark)

    Petersen, Ritika Singh; Keller, Stephan Sylvest; Hansen, Ole

    2015-01-01

    obtained by defining a reservoir and a separating trench with different depths of 85 and 125 μm, respectively, in a single embossing step. The fabrication of the required two leveled stamp is done using a modified DEEMO (dry etching, electroplating and molding) process. Dry etching using the Bosch process...... and electroplating are optimized to obtain a stamp with smooth stamp surfaces and a positive sidewall profile. Using this stamp, hot embossing is performed successfully with excellent yield and high replication fidelity....

  1. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    International Nuclear Information System (INIS)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  2. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  3. Surface etching technologies for monocrystalline silicon wafer solar cells

    Science.gov (United States)

    Tang, Muzhi

    With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

  4. A numerical model for etching through a circular hole

    International Nuclear Information System (INIS)

    Rath, P; Chai, J C; Zheng, H; Lam, Y C; Murukeshan, V M

    2006-01-01

    A numerical model based on the total concentration of etchant is proposed to model the wet chemical etching through a circular hole. The reaction at the etchant-substrate interface is assumed to be infinitely fast i.e. etching is controlled by the diffusion of etchant to the interface. The proposed model is based on a fixed-grid approach analogous to the enthalpy method. The total concentration of etchant is the sum of the unreacted etchant concentration and the reacted etchant concentration. The reacted concentration of etchant is a measure of the etchfront position during etching. The governing mass diffusion equation based on the total concentration of etchant includes the interface condition. The etchfront position is found implicitly using the proposed approach. The computational domain is fixed, which includes the whole etchant and substrate domain including the mask region. For demonstration purposes, the finite volume method is used to solve the governing mass diffusion equation with prescribed initial and boundary conditions. The effect of mask thickness and initial etchant concentration on the shape evolution of etchfront is studied

  5. Self-etching ceramic primer versus hydrofluoric acid etching: Etching efficacy and bonding performance.

    Science.gov (United States)

    El-Damanhoury, Hatem M; Gaintantzopoulou, Maria D

    2018-01-01

    This study assessed the effect of pretreatment of hybrid and glass ceramics using a self-etching primer on the shear bond strength (SBS) and surface topography, in comparison to pretreatment with hydrofluoric acid and silane. 40 rectangular discs from each ceramic material (IPS e.max CAD;EM, Vita Mark II;VM, Vita Enamic;VE), were equally divided (n=10) and assigned to one of four surface pretreatment methods; etching with 4.8% hydrofluoric acid followed by Monobond plus (HFMP), Monobond etch & prime (Ivoclar Vivadent) (MEP), No treatment (NT) as negative control and Monobond plus (Ivoclar Vivadent) with no etching (MP) as positive control. SBS of resin cement (Multilink-N, Ivoclar Vivadent) to ceramic surfaces was tested following a standard protocol. Surface roughness was evaluated using an Atomic force microscope (AFM). Surface topography and elemental analysis were analyzed using SEM/EDX. Data were analyzed with two-way analysis of variance (ANOVA) and post-hoc Bonferroni test at a significance level of α=0.05. Pretreatment with HFMP resulted in higher SBS and increased surface roughness in comparison to MEP and MP. Regardless the method of surface pretreatment, the mean SBS values of EM ceramic was significantly higher (pceramics for resin-luting cementation. Copyright © 2017 Japan Prosthodontic Society. Published by Elsevier Ltd. All rights reserved.

  6. HOT 2012

    DEFF Research Database (Denmark)

    Lund, Henriette Romme

    Undersøgelse af, hvad der er hot - og hvad der burde være hot på læseområdet med 21 læsekyndige. Undersøgelsen er gennemført siden 2010. HOT-undersøgelsen er foretaget af Nationalt Videncenter for Læsning - Professionshøjskolerne i samarb. med Dansklærerforeningen......Undersøgelse af, hvad der er hot - og hvad der burde være hot på læseområdet med 21 læsekyndige. Undersøgelsen er gennemført siden 2010. HOT-undersøgelsen er foretaget af Nationalt Videncenter for Læsning - Professionshøjskolerne i samarb. med Dansklærerforeningen...

  7. HOT 2014

    DEFF Research Database (Denmark)

    Lund, Henriette

    Undersøgelse af, hvad der er hot - og hvad der burde være hot på læseområdet med 21 læsekyndige. Undersøgelsen er gennemført siden 2010. HOT-undersøgelsen er foretaget af Nationalt Videncenter for Læsning - Professionshøjskolerne i samarb. med Dansklærerforeningen...

  8. Particle-assisted wetting

    International Nuclear Information System (INIS)

    Xu Hui; Yan Feng; Tierno, Pietro; Marczewski, Dawid; Goedel, Werner A

    2005-01-01

    Wetting of a solid surface by a liquid is dramatically impeded if either the solid or the liquid is decorated by particles. Here it is shown that in the case of contact between two liquids the opposite effect may occur; mixtures of a hydrophobic liquid and suitable particles form wetting layers on a water surface though the liquid alone is non-wetting. In these wetting layers, the particles adsorb to, and partially penetrate through, the liquid/air and/or the liquid/water interface. This formation of wetting layers can be explained by the reduction in total interfacial energy due to the replacement of part of the fluid/fluid interfaces by the particles. It is most prominent if the contact angles at the fluid/fluid/particle contact lines are close to 90 0

  9. Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography

    International Nuclear Information System (INIS)

    Woldering, Leon A; Tjerkstra, R Willem; Vos, Willem L; Jansen, Henri V; Setija, Irwan D

    2008-01-01

    We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF 6 , optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips

  10. HOT 2011

    DEFF Research Database (Denmark)

    Lund, Henriette Romme

    En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager 21 læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet.......En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager 21 læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet....

  11. Process for etching zirconium metallic objects

    International Nuclear Information System (INIS)

    Panson, A.J.

    1988-01-01

    In a process for etching of zirconium metallic articles formed from zirconium or a zirconium alloy, wherein the zirconium metallic article is contacted with an aqueous hydrofluoric acid-nitric acid etching bath having an initial ratio of hydrofluoric acid to nitric acid and an initial concentration of hydrofluoric and nitric acids, the improvement, is described comprising: after etching of zirconium metallic articles in the bath for a period of time such that the etching rate has diminished from an initial rate to a lesser rate, adding hydrofluoric acid and nitric acid to the exhausted bath to adjust the concentration and ratio of hydrofluoric acid to nitric acid therein to a value substantially that of the initial concentration and ratio and thereby regenerate the etching solution without removal of dissolved zirconium therefrom; and etching further zirconium metallic articles in the regenerated etching bath

  12. Methods of etching a substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cosmo, J J; Gambino, R J; Harper, J M.E.

    1979-05-16

    The invention relates to a method of etching a substrate. The substrate is located opposite a target electrode in a vacuum chamber, and the surface of the target electrode is bombarded with energetic particles of atomic dimensions. The target electrode is an intermetallic composition (compound, alloy or finely divided homogeneous mixture) of two metals A and B such that upon bombardment the electrode emits negative ions of metal B which have sufficient energy to produce etching of the substrate. Many target materials are exemplified. Typically the metal A has an electronegativity XA and metal B has an electronegativity XB such that Xb - Xa is greater than about 2.55 electron volts, with the exception of combinations of metals having a fractional ionicity Q less than about 0.314. The source of the energetic particles may be an ionised gas in the vacuum chamber. The apparatus and its mode of operation are described in detail.

  13. Methods of etching a substrate

    International Nuclear Information System (INIS)

    Cosmo, J.J.; Gambino, R.J.; Harper, J.M.E.

    1979-01-01

    The invention relates to a method of etching a substrate. The substrate is located opposite a target electrode in a vacuum chamber, and the surface of the target electrode is bombarded with energetic particles of atomic dimensions. The target electrode is an intermetallic composition (compound, alloy or finely divided homogeneous mixture) of two metals A and B such that upon bombardment the electrode emits negative ions of metal B which have sufficient energy to produce etching of the substrate. Many target materials are exemplified. Typically the metal A has an electronegativity XA and metal B has an electronegativity XB such that Xb - Xa is greater than about 2.55 electron volts, with the exception of combinations of metals having a fractional ionicity Q less than about 0.314. The source of the energetic particles may be an ionised gas in the vacuum chamber. The apparatus and its mode of operation are described in detail. (U.K.)

  14. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  15. Thermal history-based etching

    Science.gov (United States)

    Simpson, John T.

    2017-11-28

    A method for adjusting an etchability of a first borosilicate glass by heating the first borosilicate glass; combining the first borosilicate glass with a second borosilicate glass to form a composite; and etching the composite with an etchant. A material having a protrusive phase and a recessive phase, where the protrusive phase protrudes from the recessive phase to form a plurality of nanoscale surface features, and where the protrusive phase and the recessive phase have the same composition.

  16. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

    Directory of Open Access Journals (Sweden)

    Zhan Zhan

    2017-02-01

    Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  17. Two-year Randomized Clinical Trial of Self-etching Adhesives and Selective Enamel Etching.

    Science.gov (United States)

    Pena, C E; Rodrigues, J A; Ely, C; Giannini, M; Reis, A F

    2016-01-01

    The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. A one-step self-etching adhesive (Xeno V(+)) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with each adhesive system and divided into two subgroups (n=28; etch and non-etch). All 112 cavities were restored with the nanohybrid composite Esthet.X HD. The clinical effectiveness of restorations was recorded in terms of retention, marginal integrity, marginal staining, caries recurrence, and postoperative sensitivity after 3, 6, 12, 18, and 24 months (modified United States Public Health Service). The Friedman test detected significant differences only after 18 months for marginal staining in the groups Clearfil SE non-etch (p=0.009) and Xeno V(+) etch (p=0.004). One restoration was lost during the trial (Xeno V(+) etch; p>0.05). Although an increase in marginal staining was recorded for groups Clearfil SE non-etch and Xeno V(+) etch, the clinical effectiveness of restorations was considered acceptable for the single-step and two-step self-etching systems with or without selective enamel etching in this 24-month clinical trial.

  18. Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

  19. Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

    International Nuclear Information System (INIS)

    Kagilik, Ahmed S.

    2014-01-01

    As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer removal using Trifluormethane/Sulfur Hexafluoride (CHF 3 / SF 6 ) gas mixture in commercial silicon-nitride plasma enhanced chemical vapour deposition (SiN-PECVD) system is applied. The dependence of the solar cell performance on the etching temperature is investigated and optimized. It is found that the SiN-PECVD system temperature variation has a significant impact on the whole solar cell characteristics. A dry plasma cleaning treatment of the Si wafer surface after the PSG removal step is also investigated and developed. The cleaning step is used to remove the polymer film which is formed during the PSG etching using both oxygen and hydrogen gases. By applying an additional cleaning step, the polymer film deposited on the silicon wafer surface after PSG etching is eliminated. The effect of different plasma cleaning conditions on solar cell performance is investigated. After optimization of the plasma operating conditions, the performance of the solar cell is improved and the overall gain in efficiency of 0.6% absolute is yielded compared to a cell without any further cleaning step. On the other hand, the best solar cell characteristics can reach values close to that achieved by the conventional wet chemical etching processes demonstrating the effectiveness of the additional O 2 /H 2 post cleaning treatment.(author)

  20. AFM and SEM study of the effects of etching on IPS-Empress 2 TM dental ceramic

    Science.gov (United States)

    Luo, X.-P.; Silikas, N.; Allaf, M.; Wilson, N. H. F.; Watts, D. C.

    2001-10-01

    The aim of this study was to investigate the effects of increasing etching time on the surface of the new dental material, IPS-Empress 2 TM glass ceramic. Twenty one IPS-Empress 2 TM glass ceramic samples were made from IPS-Empress 2 TM ingots through lost-wax, hot-pressed ceramic fabrication technology. All samples were highly polished and cleaned ultrasonically for 5 min in acetone before and after etching with 9.6% hydrofluoric acid gel. The etching times were 0, 10, 20, 30, 60, 90 and 120 s respectively. Microstructure was analysed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) was used to evaluate the surface roughness and topography. Observations with SEM showed that etching with hydrofluoric acid resulted in preferential dissolution of glass matrix, and that partially supported crystals within the glass matrix were lost with increasing etching time. AFM measurements indicated that etching increased the surface roughness of the glass-ceramic. A simple least-squares linear regression was used to establish a relationship between surface roughness parameters ( Ra, RMS), and etching time, for which r2>0.94. This study demonstrates the benefits of combining two microscopic methods for a better understanding of the surface. SEM showed the mode of action of hydrofluoric acid on the ceramic and AFM provided valuable data regarding the extent of surface degradation relative to etching time.

  1. The etching behaviour of silicon carbide compacts

    International Nuclear Information System (INIS)

    Jepps, N.W.; Page, T.F.

    1981-01-01

    A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

  2. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

    Science.gov (United States)

    Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

    2014-11-21

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

  3. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

    International Nuclear Information System (INIS)

    Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

    2014-01-01

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

  4. Estimation of track registration efficiency in solution medium and study of gamma irradiation effects on the bulk-etch rate and the activation energy for bulk etching of CR-39 (DOP) Solid State Nuclear Track Detector

    International Nuclear Information System (INIS)

    Kalsi, P.C.

    2010-01-01

    The fission track registration efficiency of diethylene glycol bis allyl carbonate (dioctyl phthalate doped) (CR-39 (DOP)) solid state nuclear track detector (SSNTD) in solution medium (K wet ) has been experimentally determined and is found to be (9.7 ± 0.5).10 -4 cm. This is in good agreement with the values of other SSNTDs. The gamma irradiation effects in the dose range of 50.0-220.0 kGy on the bulk etch rate, V b and the activation energy for bulk etching, E of this solid state nuclear track detector (SSNTD) have also been studied. It is observed that the bulk etch rates increase and the activation energies for bulk etching decrease with the increase in gamma dose. These results have been explained on the basis of scission of the detector due to gamma irradiation

  5. ABB wet flue gas desulfurization

    Energy Technology Data Exchange (ETDEWEB)

    Niijhawan, P.

    1994-12-31

    The wet limestone process for flue gas desulfurization (FGD) is outlined. The following topics are discussed: wet flue gas desulfurization, wet FGD characteristics, wet scrubbers, ABB wet FGD experience, wet FGD forced oxidation, advanced limestone FGD systems, key design elements, open spray tower design, spray tower vs. packed tower, important performance parameters, SO{sub 2} removal efficiency, influence by L/G, limestone utilization, wet FGD commercial database, particulate removal efficiencies, materials of construction, nozzle layout, spray nozzles, recycle pumps, mist elimination, horizontal flow demister, mist eliminator washing, reagent preparation system, spray tower FGDS power consumption, flue gas reheat options, byproduct conditioning system, and wet limestone system.

  6. Selective photochemical dry etching of compound semiconductors

    International Nuclear Information System (INIS)

    Ashby, C.I.H.

    1988-01-01

    When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

  7. Plasma etching of electrospun polymeric nanofibres

    Energy Technology Data Exchange (ETDEWEB)

    Verdonck, Patrick [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil)]. E-mail: verdonck@imec.be; Braga Caliope, Priscila [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Moral Hernandez, Emilio del [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Silva, Ana Neilde R. da [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); FATEC-SP, Pca Fernando Prestes, 30 Sao Paulo, SP (Brazil)

    2006-10-25

    Electrospun polymeric nanofibres have several applications because of their high surface area to volume and high length to diameter ratios. This paper investigates the influence of plasma etching on these fibres and the etching mechanisms. For the characterization, SEM analysis was performed to determine the forms and shapes of the fibres and SEM photos were analysed by the technique of mathematical morphology, in order to determine the area on the sample occupied by the fibres and the frequency distribution of the nanofibre diameters. The results showed that the oxygen plasma etches the nanofibres much faster when ion bombardment is present. The form of the fibres is not altered by the etching, indicating the possibility of transport of oxygen atoms over the fibre surface. The most frequent diameter, somewhat surprisingly, is not significantly dependent on the etching process, and remains of the order of 80 nm, indicating that fibres with smaller diameters are etched at high rates.

  8. Sub-micrometer-scale patterning on Zr-based metallic glass using focused ion beam irradiation and chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Morita, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Yamada, Shigeru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Takano, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Ashida, Kiwamu [Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan); Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kochi 782-8502 (Japan); Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Ofune, Hitoshi [YKK Corporation, 200 Yoshida, Kurobe, Toyama 938-8601 (Japan)

    2007-09-19

    This report describes a method of sub-micrometer-scale rapid patterning on a Zr-based metallic glass surface using a combination of focused ion beam irradiation and wet chemical etching. We found that a Zr-based metallic glass surface irradiated with Ga{sup +} ions could be selectively etched; a concave structure with a width and depth of several tens to hundreds of nanometers rapidly formed in the irradiated area. Moreover, we determined that the etching was enhanced by the presence of Ga{sup +} ions rather than a change in the crystal structure, and the structure could be fabricated while the substrate remained amorphous. The shape of the structure was principally a function of the dose and the etch time.

  9. Effect of a re‑wetting agent on bond strength of an adhesive to ...

    African Journals Online (AJOL)

    Objective: This study investigated the effect of a re‑wetting agent on the microtensile bond strengths (μTBS) of primary and permanent dentin after acid or laser etching. Materials and Methods: Twelve permanent and 12 primary molar teeth were ground to expose an occlusal dentin surface. Each group teeth were randomly ...

  10. Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

    Science.gov (United States)

    Lu, J.; Meng, X.; Springthorpe, A. J.; Shepherd, F. R.; Poirier, M.

    2004-05-01

    A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated ``T electrodes'' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ~0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 °C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes. .

  11. Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

    International Nuclear Information System (INIS)

    Lu, J.; Meng, X.; SpringThorpe, A.J.; Shepherd, F.R.; Poirier, M.

    2004-01-01

    A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated 'T electrodes' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl 2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ∼0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl 2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 deg. C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes

  12. HOT 2010

    DEFF Research Database (Denmark)

    Lund, Henriette Romme

    En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager en række læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet. Undersøgelsen er gentaget hvert år siden 2010.......En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager en række læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet. Undersøgelsen er gentaget hvert år siden 2010....

  13. HOT 2013

    DEFF Research Database (Denmark)

    Lund, Henriette Romme

    En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager en række læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet. Undersøgelsen er gentaget hvert år siden 2010.......En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager en række læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet. Undersøgelsen er gentaget hvert år siden 2010....

  14. Etching radical controlled gas chopped deep reactive ion etching

    Science.gov (United States)

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  15. Etching conditions and shape of tracks

    International Nuclear Information System (INIS)

    Kudo, Shuichi

    1979-01-01

    The etching effect of hydrogen fluoride (HF) solution of 5%, 10%, 20% and 46% was investigated, using the perlite dug out at Wada-toge, Japan. They were studied by the progressive etching at 30 deg C, after the perlite was subjected to thermal neutron irradiation for 8 hours in the research reactor of the Institute for Atomic Energy of St. Paul (Rikkyo) University. Observation was performed mainly by replica, and false tracks, which are difficult to be judged whether they are the tracks or not, didn't appear as far as this experiment was concerned. Measurements of etch-pits and track density were carried out. The results of these investigations were considered and analyzed to describe them in five sections. The conclusions are as follows: (1) Regarding the ease of etch-pit observation and the adjustment of etching time, etching with 5% HF solution is most advantageous among four solutions of 5, 10, 20 and 46% HF. (2) The measurement of track density is more affected by the difference in counting criteria than the difference in etching conditions. The data on the size of etch-pits are required to discuss the problems of track density and counting efficiency. (3) If linear tracks are to be observed using hydrogen fluoride, it is necessary to investigate the etching characteristics with the solution of lower concentration. (Wakatsuki, Y.)

  16. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  17. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  18. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  19. Etching.

    Science.gov (United States)

    1980-09-01

    4 - 0 2- G xC 0 .- 04.410Zt .0 f.-C 13-a U Z W:; LU OU SS 0 L = 0 . 6c C! tun a.- I- -. 4 *CZ=U K 0 2N 0 (3 A LWE’-0 Z W Z4 £C 0.C ?A C. V;, 4US CI US...z Q. cm -2 C’S *-D WX 4 an 0 N 4 W 0(A1 -O 0-C -C ZaW U. aNi x 400 C O CD0 0 00Ix - WA - C 0 0 C A. J -4 * 0-4 w~ aT L C M 0n N U- X ZOWO 2 %-0 IM

  20. Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

    Science.gov (United States)

    Ozer, Fusun; Blatz, Markus B

    2013-01-01

    Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

  1. Nanostructuring of Mo/Si multilayers by means of reactive ion etching using a three-level mask

    International Nuclear Information System (INIS)

    Dreeskornfeld, L.; Haindl, G.; Kleineberg, U.; Heinzmann, U.; Shi, F.; Volland, B.; Rangelow, I.W.; Majkova, E.; Luby, S.; Kostic,; Matay, L.; Hrkut, P.; Hudek, P.; Lee, H.-Y.

    2004-01-01

    Recently, Mo/Si multilayer reflectors have been gaining industry interest as a promising choice for the next generation extreme ultraviolet mask material for printing sub 70 nm feature size devices. A reactive ion etching system with optimized hardware using CHF 3 /Ar process regime shows the capability for highly anisotropic etching of sub congruent with 400 nm feature sizes in Mo/Si test multilayers with ten periods and a bilayer thickness of 7.8 nm which were prepared by e-beam evaporation. A three-level-mask technique consisting of a top resist mask layer poly-methyl-meth-acrylate, a middle hard amorphous Si mask layer and a bottom-level polyimide layer is used to create the etch mask. The etch characteristics of the polyimide film is shown to be one of the major factors determining the success of the described multilayer etching process. The developed etching technology demonstrates superior process performance without facets, excellent uniformity and good profile control. No contamination, degeneration or defect generation in the unetched multilayer structure could be detected. This non-conventional process results in minimum deposition during the etching thus eliminating the need for a dry or wet cleaning. Sidewall angles in Mo/Si multilayers of 85 deg. , without undercut, bowing and ripples resulting in smooth sidewalls are achieved

  2. Wet gas sampling

    Energy Technology Data Exchange (ETDEWEB)

    Welker, T.F.

    1997-07-01

    The quality of gas has changed drastically in the past few years. Most gas is wet with hydrocarbons, water, and heavier contaminants that tend to condense if not handled properly. If a gas stream is contaminated with condensables, the sampling of that stream must be done in a manner that will ensure all of the components in the stream are introduced into the sample container as the composite. The sampling and handling of wet gas is extremely difficult under ideal conditions. There are no ideal conditions in the real world. The problems related to offshore operations and other wet gas systems, as well as the transportation of the sample, are additional problems that must be overcome if the analysis is to mean anything to the producer and gatherer. The sampling of wet gas systems is decidedly more difficult than sampling conventional dry gas systems. Wet gas systems were generally going to result in the measurement of one heating value at the inlet of the pipe and a drastic reduction in the heating value of the gas at the outlet end of the system. This is caused by the fallout or accumulation of the heavier products that, at the inlet, may be in the vapor state in the pipeline; hence, the high gravity and high BTU. But, in fact, because of pressure and temperature variances, these liquids condense and form a liquid that is actually running down the pipe as a stream or is accumulated in drips to be blown from the system. (author)

  3. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    Science.gov (United States)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  4. In-situ photoluminescence imaging for passivation-layer etching process control for photovoltaics

    Science.gov (United States)

    Lee, J. Z.; Michaelson, L.; Munoz, K.; Tyson, T.; Gallegos, A.; Sullivan, J. T.; Buonassisi, T.

    2014-07-01

    Light-induced plating (LIP) of solar-cell metal contacts is a scalable alternative to silver paste. However, LIP requires an additional patterning step to create openings in the silicon nitride (SiNx) antireflection coating (ARC) layer prior to metallization. One approach to pattern the SiNx is masking and wet chemical etching. In-situ real-time photoluminescence imaging (PLI) is demonstrated as a process-monitoring method to determine when SiNx has been fully removed during etching. We demonstrate that the change in PLI signal intensity during etching is caused by a combination of (1) decreasing light absorption from the reduction in SiNx ARC layer thickness and (2) decreasing surface lifetime as the SiNx/Si interface transitions to an etch-solution/Si. Using in-situ PLI to guide the etching process, we demonstrate a full-area plated single-crystalline silicon device. In-situ PLI has the potential to be integrated into a commercial processing line to improve process control and reliability.

  5. The interplay between surface charging and microscale roughness during plasma etching of polymeric substrates

    Science.gov (United States)

    Memos, George; Lidorikis, Elefterios; Kokkoris, George

    2018-02-01

    The surface roughness developed during plasma etching of polymeric substrates is critical for a variety of applications related to the wetting behavior and the interaction of surfaces with cells. Toward the understanding and, ultimately, the manipulation of plasma induced surface roughness, the interplay between surface charging and microscale roughness of polymeric substrates is investigated by a modeling framework consisting of a surface charging module, a surface etching model, and a profile evolution module. The evolution of initially rough profiles during plasma etching is calculated by taking into account as well as by neglecting charging. It is revealed, on the one hand, that the surface charging contributes to the suppression of root mean square roughness and, on the other hand, that the decrease of the surface roughness induces a decrease of the charging potential. The effect of charging on roughness is intense when the etching yield depends solely on the ion energy, and it is mitigated when the etching yield additionally depends on the angle of ion incidence. The charging time, i.e., the time required for reaching a steady state charging potential, is found to depend on the thickness of the polymeric substrate, and it is calculated in the order of milliseconds.

  6. Wet storage integrity update

    International Nuclear Information System (INIS)

    Bailey, W.J.; Johnson, A.B. Jr.

    1983-09-01

    This report includes information from various studies performed under the Wet Storage Task of the Spent Fuel Integrity Project of the Commercial Spent Fuel Management (CSFM) Program at Pacific Northwest Laboratory. An overview of recent developments in the technology of wet storage of spent water reactor fuel is presented. Licensee Event Reports pertaining to spent fuel pools and the associated performance of spent fuel and storage components during wet storage are discussed. The current status of fuel that was examined under the CSFM Program is described. Assessments of the effect of boric acid in spent fuel pool water on the corrosion and stress corrosion cracking of stainless steel and the stress corrosion cracking of stainless steel piping containing stagnant water at spent fuel pools are discussed. A list of pertinent publications is included. 84 references, 21 figures, 11 tables

  7. Characteristics of wetting temperature during spray cooling

    International Nuclear Information System (INIS)

    Mitsutake, Yuichi; Monde, Masanori; Hidaka, Shinichirou

    2006-01-01

    An experimental study has been done to elucidate the effects of mass flux and subcooling of liquid and thermal properties of solid on the wetting temperature during cooling of a hot block with spray. A water spray was impinged at one of the end surfaces of a cylindrical block initially heated at 400 or 500degC. The experimental condition was mass fluxes G=1-9 kg/m 2 s and degrees of subcooling ΔT sub =20, 50, 80 K. Three blocks of copper, brass and carbon steel were prepared. During spray cooling internal block temperature distribution and sputtering sound pressure level were recorded and the surface temperature and heat flux were evaluated with 2D inverse heat conducting analysis. Cooling process on cooling curves is divided into four regimes categorized by change in a flow situation and the sound level. The wetting temperature defined as the wall temperature at a minimum heat flux point was measured over an extensive experimental range. The wetting wall temperature was correlated well with the parameter of GΔT sub . The wetting wall temperature increases as GΔT sub increases and reaches a constant value depending on the material of the surface at higher region of GΔT sub . (author)

  8. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Science.gov (United States)

    Li, Kun-Dar; Miao, Jin-Ru

    2018-02-01

    To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  9. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Directory of Open Access Journals (Sweden)

    Kun-Dar Li

    2018-02-01

    Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  10. Etching Behavior of Aluminum Alloy Extrusions

    Science.gov (United States)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  11. Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

    Directory of Open Access Journals (Sweden)

    Iatsunskyi I. R.

    2013-12-01

    Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

  12. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.

    1992-01-01

    This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

  13. Wetting of real surfaces

    CERN Document Server

    Bormashenko, Edward Yu

    2013-01-01

    The problem of wetting and drop dynamics on various surfaces is very interesting from both the scientificas well as thepractical viewpoint, and subject of intense research.The results are scattered across papers in journals, sothis workwill meet the need for a unifying, comprehensive work.

  14. Wet oxidation of quinoline

    DEFF Research Database (Denmark)

    Thomsen, A.B.; Kilen, H.H.

    1998-01-01

    The influence of oxygen pressure (0.4 and 2 MPa). reaction time (30 and 60 min) and temperature (260 and 280 degrees C) on the wet oxidation of quinoline has been studied. The dominant parameters for the decomposition of quinoline were oxygen pressure and reaction temperature. whereas the reactio...

  15. Deep-etched sinusoidal polarizing beam splitter grating.

    Science.gov (United States)

    Feng, Jijun; Zhou, Changhe; Cao, Hongchao; Lv, Peng

    2010-04-01

    A sinusoidal-shaped fused-silica grating as a highly efficient polarizing beam splitter (PBS) is investigated based on the simplified modal method. The grating structure depends mainly on the ratio of groove depth to grating period and the ratio of incident wavelength to grating period. These ratios can be used as a guideline for the grating design at different wavelengths. A sinusoidal-groove PBS grating is designed at a wavelength of 1310 nm under Littrow mounting, and the transmitted TM and TE polarized waves are mainly diffracted into the zeroth order and the -1st order, respectively. The grating profile is optimized by using rigorous coupled-wave analysis. The designed PBS grating is highly efficient (>95.98%) over the O-band wavelength range (1260-1360 nm) for both TE and TM polarizations. The sinusoidal grating can exhibit higher diffraction efficiency, larger extinction ratio, and less reflection loss than the rectangular-groove PBS grating. By applying wet etching technology on the rectangular grating, which was manufactured by holographic recording and inductively coupled plasma etching technology, the sinusoidal grating can be approximately fabricated. Experimental results are in agreement with theoretical values.

  16. Effects of the Addictives on Etching Characteristics of Aluminum Foil

    Energy Technology Data Exchange (ETDEWEB)

    Kim, S.K.; Jang, J.M.; Chi, C.S. [Kookmin University, Seoul (Korea); Shin, D.C. [Sungnam Polytechnic, Sungnam (Korea); Lee, J.H.; Oh, H.J. [Hanseo University, Seosan (Korea)

    2001-01-01

    The effects of additives in the HCI etching solution on etching behaviors of aluminium foil as dielectric film for electrolytic capacitors were investigated. The etch pits formed in 1M hydrochloric acid containing ethylene glycol as an additive contain more fine and homogeneous etch tunnels compared to thoese in 1 M hydrochloric acid only, which led to the increase in the effective internal surface area of aluminum foil. After anodizing of aluminum foil etched in etching solutions, the LCR meter results have shown that the capacitance of dielectric film etched in hydrochloric acid with ethylene glycol was increased remarkably compared to that etched in hydrochloric acid only. (author). 21 refs., 10 figs.

  17. Sputter etching of polymer fibres

    International Nuclear Information System (INIS)

    Carter, G.; Hill, A.E.; Nobes, M.J.; Jeffries, R.; Simmens, S.C.

    1979-01-01

    Fibres of polyamide, polyester and an aromatic polyamide (Kevlar) have been subjected to Ar + ion bombardment erosion in an ion accelerator or an rf discharge system. In the case of the former two polymers, cones are observed to develop upon the fibre surface and these are associated with etch protection resulting from the presence of particles of titanium dioxide pigment. This effect is absent in the third, unpigmented, fibre. In all cases ripple structures with a habit transverse to the fibre axes and of wavelength of approximately 1000 Angstrom are gradually developed during ion bombardment. It is suggested that this morphology results from an underlying periodicity of the fibre structure either inherent in the fibre structure or induced by the irradiation. (author)

  18. Development of the DC-RF Hybrid Plasma Source and the Application to the Etching and Texturing of the Silicon Surface

    International Nuclear Information System (INIS)

    Kim, Ji Hun

    2011-02-01

    Plasma used in dry etching, thin film deposition and surface treatment for display or semiconductor industries are operating at low pressures in general. However, low pressure processing is very costly due to the use of vacuum equipment and vacuum components. Subsequent wet processing is environmentally undesirable due to the use of a large amount of chemicals. Also, the usage of vacuum processing increases fabrication cost and decreases productivity. If stable atmospheric plasmas can be used, not only the decrease in processing costs but also the increase in productivity could be obtained. New DC arc plasmatron with a hot rod cathode and cold nozzle anode was developed and its V-A (Volt-Ampere) characteristics were investigated. Outlook of the measured V-A characteristics cleared the question of the stability of arc burning in the new DC arc plasmatron. The plasmatron that has a stable operations with distributed anode spot could possibly be applied to plasma chemical processing. And measured value of the erosion rate for copper anode is m Cu 3.6x10 -10 g/C which is better than corresponding data for thermo-ionic emission cathodes made of tungsten mw ∼10 -9 g/C. These facts mean that plasmatron durability reaches ∼10 3 h. The low anode erosion rate is related to the large surface of arc-anode contact due to distributed anode arc spot, which reduces the current density. Unique characteristics of the new plasma source concerning its durability and plasma purity at rather low temperatures make it an interesting tool for technical applications, such as etching/deposition and chemical reaction. To apply a plasma processing, the T-type plasmatron was modified to A-type. The A-type plasmatron was used to activate the CF 4 and SF 6 gases in etching experiments at atmospheric and low pressure. To reduce the recombination rate of the activated gas particles inside a plasmatron and let them preserve their activated state outside, the whole device was installed outside of

  19. Effectiveness of immediate bonding of etch-and-rinse adhesives to simplified ethanol-saturated dentin

    Directory of Open Access Journals (Sweden)

    Leandro Afonso Guimarães

    2012-04-01

    Full Text Available This study examined the immediate bond strength of etch-and-rinse adhesives to demineralized dentin saturated with either water or absolute ethanol. The research hypothesis was that there would be no difference in bond strength to dentin between water or ethanol wet-bonding techniques. The medium dentin of 20 third molars was exposed (n = 5. The dentin surface was then acid-etched, left moist and randomly assigned to be saturated via either water wet-bonding (WBT or absolute ethanol wet-bonding (EBT. The specimens were then treated with one of the following etch-and-rinse adhesive systems: a 3-step, water-based system (Adper Scotchbond Multipurpose, or SBMP or a 2-step, ethanol/water-based system (Adper Single Bond 2, or SB. Resin composite build-ups were then incrementally constructed. After water storage for 24 h at 37°C, the tensile strength of the specimens was tested in a universal testing machine (0.5 mm/min. Data were analyzed by two-way ANOVA and Tukey's test (a = 5%. The failure modes were verified using a stereomicroscope (40'. For both adhesives, no significant difference in bond strength was observed between WBT and EBT (p > 0.05. The highest bond strength was observed for SB, regardless of the bonding technique (p < 0.05. No significant interaction between adhesives and bonding techniques was noticed (p = 0.597. There was a predominance of adhesive failures for all tested groups. The EBT and WBT displayed similar immediate bond strength means for both adhesives. The SB adhesive exhibited higher means for all conditions tested. Further investigations are needed to evaluate long-term bonding to dentin mediated by commercial etch-and-rinse adhesives using the EBT approach.

  20. Complex three-dimensional structures in Si{1 0 0} using wet bulk micromachining

    International Nuclear Information System (INIS)

    Pal, Prem; Sato, Kazuo

    2009-01-01

    Complex three-dimensional structures for microelectromechanical systems (MEMS) are fabricated in Si{1 0 0} wafers using wet bulk micromachining. The structures are divided into two categories: fixed and freestanding. The fabrication processes for both types utilize single wafers with sequentially deposited nitride and oxide layers, local oxidation of silicon (LOCOS) and two steps of wet anisotropic etching. The fixed structures contain perfectly sharp edges. Thermally deposited oxide is used as the material for the freestanding structures. Wet etching is performed in tetramethyl ammonium hydroxide (TMAH) with and without Triton X-100 (C 14 H 22 O(C 2 H 4 O) n , n = 9–10). For the fixed structures, both etching steps are performed either in 25 wt% TMAH + Triton or pure TMAH or both, depending upon the type of the structures. In the case of freestanding systems, TMAH + Triton is utilized first, followed by pure TMAH. The fabrication methods enable densely arrayed structures, allowing the manufacture of corrugated diaphragms, compact size liquid (or gas) flow delivery systems, newly shaped mold for soft MEMS structures (e.g. PDMS (polydimethylsiloxane)) and other applications. The present research is an approach to fabricate advanced MEMS structures, extending the range of 3D structures fabricated by silicon anisotropic etching

  1. Optimization of the etch-and-rinse technique: New perspectives to improve resin-dentin bonding and hybrid layer integrity by reducing residual water using dimethyl sulfoxide pretreatments.

    Science.gov (United States)

    Stape, Thiago Henrique Scarabello; Tjäderhane, Leo; Abuna, Gabriel; Sinhoreti, Mário Alexandre Coelho; Martins, Luís Roberto Marcondes; Tezvergil-Mutluay, Arzu

    2018-04-13

    To determine whether bonding effectiveness and hybrid layer integrity on acid-etched dehydrated dentin would be comparable to the conventional wet-bonding technique through new dentin biomodification approaches using dimethyl sulfoxide (DMSO). Etched dentin surfaces from extracted sound molars were randomly bonded in wet or dry conditions (30s air drying) with DMSO/ethanol or DMSO/H 2 O as pretreatments using a simplified (Scotchbond Universal Adhesive, 3M ESPE: SU) and a multi-step (Adper Scotchbond Multi-Purpose, 3M ESPE: SBMP) etch-and-rinse adhesives. Untreated dentin surfaces served as control. Bonded teeth (n=8) were stored in distilled water for 24h and sectioned into resin-dentin beams (0.8mm 2 ) for microtensile bond strength test and quantitative interfacial nanoleakage analysis (n=8) under SEM. Additional teeth (n=2) were prepared for micropermeability assessment by CFLSM under simulated pulpar pressure (20cm H 2 O) using 5mM fluorescein as a tracer. Microtensile data was analyzed by 3-way ANOVA followed by Tukey Test and nanoleakage by Kruskal-Wallis and Dunn-Bonferroni multiple comparison test (α=0.05). While dry-bonding of SBMP produced significantly lower bond strengths than wet-bonding (padhesives to demineralized air-dried dentin beyond conventional wet-bonding. Less porous resin-dentin interfaces with higher bond strengths on air-dried etched dentin were achieved; nonetheless, overall efficiency varied according to DMSO's co-solvent and adhesive type. DMSO pretreatments permit etched dentin to be air-dried before hybridization facilitating residual water removal and thus improving bonding effectiveness. This challenges the current paradigm of wet-bonding requirement for the etch-and-rinse approach creating new possibilities to enhance the clinical longevity of resin-dentin interfaces. Copyright © 2018 The Academy of Dental Materials. Published by Elsevier Inc. All rights reserved.

  2. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik

    2014-01-01

    ‐ray beam down to a spot size of some 100 nm, the sidewalls of the cavities etched down to 300 μm into a silicon wafer must be perfectly straight and normal to the surface and have minimum roughness.The range of possible applications of the silicon etches is greatly extended if combined with electroplating...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

  3. HOT 2017

    DEFF Research Database (Denmark)

    Hannibal, Sara Stefansen

    HOT er en kvalitativ undersøgelse, der hvert år diskuterer og undersøger en lille udvalgt skare af danskkyndige fagpersoners bud på, hvad de er optagede af på literacyområdet her og nu – altså hvilke emner, de vil vurdere som aktuelle at forholde sig til i deres nuværende praksis.......HOT er en kvalitativ undersøgelse, der hvert år diskuterer og undersøger en lille udvalgt skare af danskkyndige fagpersoners bud på, hvad de er optagede af på literacyområdet her og nu – altså hvilke emner, de vil vurdere som aktuelle at forholde sig til i deres nuværende praksis....

  4. Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

    International Nuclear Information System (INIS)

    Aydemir, A; Akin, T

    2012-01-01

    In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures. (paper)

  5. Hot particles

    International Nuclear Information System (INIS)

    Merwin, S.E.; Moeller, M.P.

    1989-01-01

    Nuclear Regulatory Commission (NRC) licensees are required to assess the dose to skin from a hot particle contamination event at a depth of skin of7mg/cm 2 over an area of 1 cm 2 and compare the value to the current dose limit for the skin. Although the resulting number is interesting from a comparative standpoint and can be used to predict local skin reactions, comparison of the number to existing limits based on uniform exposures is inappropriate. Most incidents that can be classified as overexposures based on this interpretation of dose actually have no effect on the health of the worker. As a result, resources are expended to reduce the likelihood that an overexposure event will occur when they could be directed toward eliminating the cause of the problem or enhancing existing programs such as contamination control. Furthermore, from a risk standpoint, this practice is not ALARA because some workers receive whole body doses in order to minimize the occurrence of hot particle skin contaminations. In this paper the authors suggest an alternative approach to controlling hot particle exposures

  6. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Unknown

    Department of Physics, University of Rajasthan, Jaipur 302 004, India. MS received 10 June 2005 ... Both the track and bulk etching takes place in the irradiated membrane. ... using rotating flywheel attachment, the details having been given ...

  7. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  8. Directional Etching of Silicon by Silver Nanostructures

    Science.gov (United States)

    Sharma, Pradeep; Wang, Yuh-Lin

    2011-02-01

    We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

  9. Dry etching of thin chalcogenide films

    Energy Technology Data Exchange (ETDEWEB)

    Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

    2010-04-01

    Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

  10. Optical and Electrical Performance of ZnO Films Textured by Chemical Etching

    Directory of Open Access Journals (Sweden)

    Shiuh-Chuan HER

    2015-11-01

    Full Text Available Zinc oxide (ZnO films were prepared by radio frequency (RF magnetron sputtering on the glass substrate as transparent conductive oxide films. For silicon solar cells, a proper surface texture is essential to introduce light scattering and subsequent light trapping to enhance the current generation. In this study, the magnetron-sputtered ZnO films were textured by wet-chemical etching in diluted hydrochloric acid (HCl for better light scattering. The diffuse transmittance of the surface textured ZnO films was measured to evaluate the light scattering. The influence of hydrochloric acid concentration on the morphology, optical and electrical properties of the surface-textured ZnO film was investigated. The ZnO film etched in 0.05M HCl solution for 30 s exhibited average diffuse transmittance in the visible wavelength range of 9.52 % and good resistivity of 1.10 x 10-3 W×cm while the as-deposited ZnO film had average diffuse transmittance of 0.51 % and relatively high resistivity of 5.84 x 10-2 W×cm. Experimental results illustrated that the optical and electrical performance of ZnO films can be significantly improved by introducing the surface texture through the wet-chemical etching process.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9624

  11. Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

    International Nuclear Information System (INIS)

    Dajko, G.

    1991-01-01

    Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

  12. Self-etching adhesive on intact enamel, with and without pre-etching.

    Science.gov (United States)

    Devarasa, G M; Subba Reddy, V V; Chaitra, N L; Swarna, Y M

    2012-05-01

    Bond strengths of composite resin to enamel using self-etch adhesive (SEA) Clearfil SE bond system on intact enamel and enamel pre-etched with phosphoric acid were compared. The objective was to determine if the pre-etching would increase the bond strengths of the SEA systems to intact enamel and to evaluate the effect of pre-etching on bond formation of self-etch adhesives on intact enamel. Labial surfaces of 40 caries free permanent upper central and lateral incisors were cleaned, sectioned of their roots. All specimens were mounted on acrylic block and divided randomly into four groups. In two groups the application of self-etch adhesive, Clearfil SE bond was carried as per manufacturer's instructions, composite cylinders were built, whereas in the other two groups, 37% phosphoric acid etching was done before the application of self-etching adhesives. Then the resin tags were analyzed using scanning electron microscope and shear bond strength was measured using Instron universal testing machine. When phosphoric acid was used, there was significant increase in the depth of penetration of resin tags and in the Shear Bond Strength of composite to enamel. The results indicate that out of both treatment groups, pre-etching the intact enamel with 37% phosphoric acid resulted in formation of longer resin tags and higher depth of penetration of resin tags of the Clearfil SE bond, and attaining higher bond strength of the Clearfil SE bond to intact enamel. Copyright © 2011 Wiley Periodicals, Inc.

  13. Shear bond strength of self-etch adhesives to enamel with additional phosphoric acid etching.

    Science.gov (United States)

    Lührs, Anne-Katrin; Guhr, Silke; Schilke, Reinhard; Borchers, Lothar; Geurtsen, Werner; Günay, Hüsamettin

    2008-01-01

    This study evaluated the shear bond strength of self-etch adhesives to enamel and the effect of additional phosphoric acid etching. Seventy sound human molars were randomly divided into three test groups and one control group. The enamel surfaces of the control group (n=10) were treated with Syntac Classic (SC). Each test group was subdivided into two groups (each n=10). In half of each test group, ground enamel surfaces were coated with the self-etch adhesives AdheSe (ADH), Xeno III (XE) or Futurabond NR (FNR). In the remaining half of each test group, an additional phosphoric acid etching of the enamel surface was performed prior to applying the adhesives. The shear bond strength was measured with a universal testing machine at a crosshead speed of 1 mm/minute after storing the samples in distilled water at 37 degrees C for 24 hours. Fracture modes were determined by SEM examination. For statistical analysis, one-way ANOVA and the two-sided Dunnett Test were used (p>0.05). Additional phosphoric etching significantly increased the shear bond strength of all the examined self-etch adhesives (padhesive fractures. For all the self-etch adhesives, a slight increase in mixed fractures occurred after conditioning with phosphoric acid. An additional phosphoric acid etching of enamel should be considered when using self-etch adhesives. More clinical studies are needed to evaluate the long-term success of the examined adhesives.

  14. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  15. Development of a Silicon Microneedle with Three-Dimensional Sharp Tip by Electrochemical Etching

    Science.gov (United States)

    Izumi, Hayato; Okamoto, Tokusuke; Suzuki, Masato; Aoyagi, Seiji

    Aiming at the use in low-invasive medical treatments, this paper reports a fabrication technique of silicon microneedle of conical sharp point. The electrochemical etching technique is employed for sharpening the tip of a pillar, which is diced from a silicon wafer. A finely smooth tip surface is obtained due to electrochemical etching reactions, and is effective for easy insertion. The fabrication method is based on inexpensive wet etching, which does not require expensive fabrication facilities such as deep reactive ion etching (DRIE). A sharp needle was successfully fabricated, the tip angle of which was considerably small and was distributed within the range from 15 to 30 deg. An experiment of inserting the fabricated needle into an artificial skin of silicone rubber was carried out. As the results, the resistance force during insertion was much reduced compared to those of two-dimensional sharp needles. Imitating mosquito's motion, the effectiveness of applying vibration to the fabricated needle during insertion was also confirmed. After biocompatible Parylene coating, puncturing a human skin was demonstrated assuming a lancet usage for the diabetics, in which the bleeding was surely observed.

  16. Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

    Science.gov (United States)

    Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

    2017-01-01

    This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

  17. Synthesis of Platinum Nanotubes and Nanorings via Simultaneous Metal Alloying and Etching

    KAUST Repository

    Huang, Zhiqi

    2016-04-19

    Metallic nanotubes represent a class of hollow nanostructures with unique catalytic properties. However, the wet-chemical synthesis of metallic nanotubes remains a substantial challenge, especially for those with dimensions below 50 nm. This communication describes a simultaneous alloying-etching strategy for the synthesis of Pt nanotubes with open ends by selective etching Au core from coaxial Au/Pt nanorods. This approach can be extended for the preparation of Pt nanorings when Saturn-like Au core/Pt shell nanoparticles are used. The diameter and wall thickness of both nanotubes and nanorings can be readily controlled in the range of 14-37 nm and 2-32 nm, respectively. We further demonstrated that the nanotubes with ultrathin side walls showed superior catalytic performance in oxygen reduction reaction. © 2016 American Chemical Society.

  18. Metal-assisted chemical etching of CIGS thin films for grain size analysis

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Chaowei [Research and Development Centre, Hanergy Thin Film Power Group Limited, Chengdu (China); Loi, Huu-Ha; Duong, Anh; Parker, Magdalena [Failure Analysis Department, MiaSole Hi-Tech Corp., Santa Clara, CA (United States)

    2016-09-15

    Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi-component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal-assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Investigation of Plasma Etching for Superconducting RF Cavities Surface Preparation. Final Report

    International Nuclear Information System (INIS)

    Vuskovic, Leposava

    2009-01-01

    Our results show that plasma-treated samples are comparable or superior to a BCP sample, both in the size of features and sharpness of the boundaries between individual features at the surface. Plasma treatment of bulk Nb cavities is a promising technique for microwave cavities preparation used in particle acceleration application. Etching rates are sufficiently high to enable efficient removal of mechanically damaged surface layer with high reproducibility. No impurities are deposited on the bulk Nb surface during plasma treatment. Surface topology characteristic are promising for complex cavity geometry, since discharge conforms the profile of the reaction chamber. In view of these experimental results, we propose plasma treatment for producing microwave cavities with high Q factor instead of using bulk Nb treated with wet etching process.

  20. Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

    Directory of Open Access Journals (Sweden)

    Shih-Jeh Wu

    2016-10-01

    Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

  1. PREFACE: Wetting: introductory note

    Science.gov (United States)

    Herminghaus, S.

    2005-03-01

    The discovery of wetting as a topic of physical science dates back two hundred years, to one of the many achievements of the eminent British scholar Thomas Young. He suggested a simple equation relating the contact angle between a liquid surface and a solid substrate to the interfacial tensions involved [1], γlg cos θ = γsg - γsl (1) In modern terms, γ denotes the excess free energy per unit area of the interface indicated by its indices, with l, g and s corresponding to the liquid, gas and solid, respectively [2]. After that, wetting seems to have been largely ignored by physicists for a long time. The discovery by Gabriel Lippmann that θ may be tuned over a wide range by electrochemical means [3], and some important papers about modifications of equation~(1) due to substrate inhomogeneities [4,5] are among the rare exceptions. This changed completely during the seventies, when condensed matter physics had become enthusiastic about critical phenomena, and was vividly inspired by the development of the renormalization group by Kenneth Wilson [6]. This had solved the long standing problem of how to treat fluctuations, and to understand the universal values of bulk critical exponents. By inspection of the critical exponents of the quantities involved in equation~(1), John W Cahn discovered what he called critical point wetting: for any liquid, there should be a well-defined transition to complete wetting (i.e., θ = 0) as the critical point of the liquid is approached along the coexistence curve [7]. His paper inspired an enormous amount of further work, and may be legitimately viewed as the entrance of wetting into the realm of modern physics. Most of the publications directly following Cahn's work were theoretical papers which elaborated on wetting in relation to critical phenomena. A vast amount of interesting, and in part quite unexpected, ramifications were discovered, such as the breakdown of universality in thin film systems [8]. Simultaneously, a number

  2. Wet steam wetness measurement in a 10 MW steam turbine

    Directory of Open Access Journals (Sweden)

    Kolovratník Michal

    2014-03-01

    Full Text Available The aim of this paper is to introduce a new design of the extinction probes developed for wet steam wetness measurement in steam turbines. This new generation of small sized extinction probes was developed at CTU in Prague. A data processing technique is presented together with yielded examples of the wetness distribution along the last blade of a 10MW steam turbine. The experimental measurement was done in cooperation with Doosan Škoda Power s.r.o.

  3. An etching mask and a method to produce an etching mask

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

  4. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  5. Preparation of composite micro/nano structure on the silicon surface by reactive ion etching: Enhanced anti-reflective and hydrophobic properties

    Science.gov (United States)

    Zeng, Yu; Fan, Xiaoli; Chen, Jiajia; He, Siyu; Yi, Zao; Ye, Xin; Yi, Yougen

    2018-05-01

    A silicon substrate with micro-pyramid structure (black silicon) is prepared by wet chemical etching and then subjected to reactive ion etching (RIE) in the mixed gas condition of SF6, CHF3 and He. We systematically study the impacts of flow rates of SF6, CHF3 and He, the etching pressure and the etching time on the surface morphology and reflectivity through various characterizations. Meanwhile, we explore and obtain the optimal combination of parameters for the preparation of composite structure that match the RIE process based on the basis of micro-pyramid silicon substrate. The composite sample prepared under the optimum parameters exhibits excellent anti-reflective performance, hydrophobic, self-cleaning and anti-corrosive properties. Based on the above characteristics, the composite micro/nano structure can be applied to solar cells, photodetectors, LEDs, outdoor devices and other important fields.

  6. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  7. Plasma etching of niobium-SiO/sub x/ layers

    International Nuclear Information System (INIS)

    Schelle, D.; Tiller, H.J.

    1986-01-01

    CF 4 -plasma etching of niobium and SiO/sub x/ layers has been investigated in a r.f. diode reactor. Etch rates increase linearly with increasing power density and also increase with pressure. The etch rate ratio can be changed using different etch gases or operating in different plasma modes (PE or IEPE). Changing from the ion enhanced plasma etching mode (IEPE) to plasma etching mode (PE) the etch rate ratio is changing by a factor of ten. On the basis of etch rate dependences on process parametes and thermodynamic data it has been suggested the generation of fluorine radicals as the rate limiting step. A general etching model has been proposed, which explains qualitatively and quantitatively (on account of data from literature) the measured results. (author)

  8. Wetting of alkanes on water

    Energy Technology Data Exchange (ETDEWEB)

    Bertrand, E.; Bonn, D.; Meunier, J.; Shahidzadeh, N. [Ecole Normale Superieure, Laboratoire de Physique Statistique, 24 rue Lhomond, 75231, Cedex 05 Paris (France); Broseta, D.; Ragil, K. [Institut Francais du Petrole, 1-4 avenue de Bois Preau, 92852 Rueil-Malmaison Cedex (France); Dobbs, H.; Indekeu, J.O. [Katholieke Universiteit Leuven, Laboratorium voor Vaste-Stoffysica en Magnetisme, B-3001 Leuven (Belgium)

    2002-04-01

    The wetting behavior of oil on water (or brine) has important consequences for the transport properties of oil in water-containing porous reservoirs, and consequently for oil recovery. The equilibrium wetting behavior of model oils composed of pure alkanes or alkane mixtures on brine is reviewed in this paper. Intermediate between the partial wetting state, in which oil lenses coexist on water with a thin film of adsorbed alkane molecules, and the complete wetting state, in which a macroscopically thick oil layer covers the water, these systems display a third, novel wetting state, in which oil lenses coexist with a mesoscopic (a few-nanometers-thick) oil film. The nature and location of the transitions between these wetting regimes depend on oil and brine compositions, temperature and pressure.

  9. Plasma etching a ceramic composite. [evaluating microstructure

    Science.gov (United States)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  10. Wetting of cholesteric liquid crystals.

    Science.gov (United States)

    Silvestre, Nuno M; Figueirinhas Pereira, Maria Carolina; Bernardino, Nelson R; Telo da Gama, Margarida M

    2016-02-01

    We investigate theoretically the wetting properties of cholesteric liquid crystals at a planar substrate. If the properties of substrate and of the interface are such that the cholesteric layers are not distorted, the wetting properties are similar to those of a nematic liquid crystal. If, on the other hand, the anchoring conditions force the distortion of the liquid crystal layers the wetting properties are altered, the free cholesteric-isotropic interface is non-planar and there is a layer of topological defects close to the substrate. These deformations can either promote or hinder the wetting of the substrate by a cholesteric, depending on the properties of the cholesteric liquid crystal.

  11. Isotropically etched radial micropore for cell concentration, immobilization, and picodroplet generation.

    Science.gov (United States)

    Perroud, Thomas D; Meagher, Robert J; Kanouff, Michael P; Renzi, Ronald F; Wu, Meiye; Singh, Anup K; Patel, Kamlesh D

    2009-02-21

    To enable several on-chip cell handling operations in a fused-silica substrate, small shallow micropores are radially embedded in larger deeper microchannels using an adaptation of single-level isotropic wet etching. By varying the distance between features on the photolithographic mask (mask distance), we can precisely control the overlap between two etch fronts and create a zero-thickness semi-elliptical micropore (e.g. 20 microm wide, 6 microm deep). Geometrical models derived from a hemispherical etch front show that micropore width and depth can be expressed as a function of mask distance and etch depth. These models are experimentally validated at different etch depths (25.03 and 29.78 microm) and for different configurations (point-to-point and point-to-edge). Good reproducibility confirms the validity of this approach to fabricate micropores with a desired size. To illustrate the wide range of cell handling operations enabled by micropores, we present three on-chip functionalities: continuous-flow particle concentration, immobilization of single cells, and picoliter droplet generation. (1) Using pressure differentials, particles are concentrated by removing the carrier fluid successively through a series of 44 shunts terminated by 31 microm wide, 5 microm deep micropores. Theoretical values for the concentration factor determined by a flow circuit model in conjunction with finite volume modeling are experimentally validated. (2) Flowing macrophages are individually trapped in 20 microm wide, 6 microm deep micropores by hydrodynamic confinement. The translocation of transcription factor NF-kappaB into the nucleus upon lipopolysaccharide stimulation is imaged by fluorescence microscopy. (3) Picoliter-sized droplets are generated at a 20 microm wide, 7 microm deep micropore T-junction in an oil stream for the encapsulation of individual E. coli bacteria cells.

  12. The role of Triton surfactant in anisotropic etching of {1 1 0} reflective planes on (1 0 0) silicon

    Science.gov (United States)

    Resnik, Drago; Vrtacnik, Danilo; Aljancic, Uros; Mozek, Matej; Amon, Slavko

    2005-06-01

    Etching characteristics and properties of {1 1 0} silicon crystal planes used as 45° optical mirrors for deflecting optical beams from/to optical fibers were investigated. Fiber aligning grooves and passive mirror-like planes were realized by wet micromachining of (1 0 0) silicon in KOH IPA and TMAH IPA systems. Implementation of Triton-x-100 surfactant as an additive to 25% TMAH in anisotropic etching of {1 1 0} silicon passive mirror planes is reported and discussed. It was found that Triton-x-100 contents in the range of 10 200 ppm to the 25% TMAH water etchant significantly increase the anisotropy mostly by decreasing the {1 1 0} etch rate and retaining the {1 0 0} etch rate. It is also shown that {1 1 0} surface roughness is substantially improved compared to two other etching systems. Furthermore, efficient convex corner underetching reduction is demonstrated. The results of optical characterization of passive mirrors with 632 nm incident light show reduced scattering of reflected optical beam due to improved microroughness for mirrors made by TMAH Triton. For the reflection of the optical beam with 1.33 µm and 1.54 µm wavelengths, sputtered layer of gold is used as reflective coating on silicon mirrors thus increasing the reflected optical beam intensity by an additional 8%.

  13. Model calculations for electrochemically etched neutron detectors

    International Nuclear Information System (INIS)

    Pitt, E.; Scharmann, A.; Werner, B.

    1988-01-01

    Electrochemical etching has been established as a common method for visualisation of nuclear tracks in solid state nuclear track detectors. Usually the Mason equation, which describes the amplification of the electrical field strength at the track tip, is used to explain the treeing effect of electrochemical etching. The yield of neutron-induced tracks from electrochemically etched CR-39 track detectors was investigated with respect to the electrical parameters. A linear dependence on the response from the macroscopic field strength was measured which could not be explained by the Mason equation. It was found that the reality of a recoil proton track in the detector does not fit the boundary conditions which are necessary when the Mason equation is used. An alternative model was introduced to describe the track and detector geometry in the case of a neutron track detector. The field strength at the track tip was estimated with this model and compared with the experimental data, yielding good agreement. (author)

  14. Pattern transfer with stabilized nanoparticle etch masks

    International Nuclear Information System (INIS)

    Hogg, Charles R; Majetich, Sara A; Picard, Yoosuf N; Narasimhan, Amrit; Bain, James A

    2013-01-01

    Self-assembled nanoparticle monolayer arrays are used as an etch mask for pattern transfer into Si and SiO x substrates. Crack formation within the array is prevented by electron beam curing to fix the nanoparticles to the substrate, followed by a brief oxygen plasma to remove excess carbon. This leaves a dot array of nanoparticle cores with a minimum gap of 2 nm. Deposition and liftoff can transform the dot array mask into an antidot mask, where the gap is determined by the nanoparticle core diameter. Reactive ion etching is used to transfer the dot and antidot patterns into the substrate. The effect of the gap size on the etching rate is modeled and compared with the experimental results. (paper)

  15. Ion transport by gating voltage to nanopores produced via metal-assisted chemical etching method

    Science.gov (United States)

    Van Toan, Nguyen; Inomata, Naoki; Toda, Masaya; Ono, Takahito

    2018-05-01

    In this work, we report a simple and low-cost way to create nanopores that can be employed for various applications in nanofluidics. Nano sized Ag particles in the range from 1 to 20 nm are formed on a silicon substrate with a de-wetting method. Then the silicon nanopores with an approximate 15 nm average diameter and 200 μm height are successfully produced by the metal-assisted chemical etching method. In addition, electrically driven ion transport in the nanopores is demonstrated for nanofluidic applications. Ion transport through the nanopores is observed and could be controlled by an application of a gating voltage to the nanopores.

  16. Wetting front instability in an initially wet unsaturated fracture

    International Nuclear Information System (INIS)

    Nicholl, M.J.; Glass, R.J.; Nguyen, H.A.

    1993-01-01

    Experimental results exploring gravity-driven wetting from instability in a pre-wetted, rough-walled analog fractures such as those at Yucca Mountain are presented. Initial conditions considered include a uniform moisture field wetted to field capacity of the analog fracture and the structured moisture field created by unstable infiltration into an initially dry fracture. As in previous studies performed under dry initial conditions, instability was found to result both at the cessation of stable infiltration and at flux lower than the fracture capacity under gravitational driving force. Individual fingers were faster, narrower, longer, and more numerous than observed under dry initial conditions. Wetting fronts were found to follow existing wetted structure, providing a mechanism for rapid recharge and transport

  17. Wetting front instability in an initially wet unsaturated fracture

    International Nuclear Information System (INIS)

    Nicholl, M.J.; Glass, R.J.; Nguyen, H.A.

    1992-01-01

    Experimental results exploring gravity-driven wetting front instability in a pre-wetted, rough-walled analog fracture are presented. Initial conditions considered include a uniform moisture field wetted to field capacity of the analog fracture and the structured moisture field created by unstable infiltration into an initially dry fracture. As in previous studies performed under dry initial conditions, instability was found to result both at the cessation of stable infiltration and at flux lower than the fracture capacity under gravitational driving force. Individual fingers were faster, narrower, longer, and more numerous than observed under dry initial conditions. Wetting fronts were found to follow existing wetted structure, providing a mechanism for rapid recharge and transport

  18. Wet Mars, Dry Mars

    Science.gov (United States)

    Fillingim, M. O.; Brain, D. A.; Peticolas, L. M.; Yan, D.; Fricke, K. W.; Thrall, L.

    2012-12-01

    The magnetic fields of the large terrestrial planets, Venus, Earth, and Mars, are all vastly different from each other. These differences can tell us a lot about the interior structure, interior history, and even give us clues to the atmospheric history of these planets. This poster highlights the third in a series of presentations that target school-age audiences with the overall goal of helping the audience visualize planetary magnetic field and understand how they can impact the climatic evolution of a planet. Our first presentation, "Goldilocks and the Three Planets," targeted to elementary school age audiences, focuses on the differences in the atmospheres of Venus, Earth, and Mars and the causes of the differences. The second presentation, "Lost on Mars (and Venus)," geared toward a middle school age audience, highlights the differences in the magnetic fields of these planets and what we can learn from these differences. Finally, in the third presentation, "Wet Mars, Dry Mars," targeted to high school age audiences and the focus of this poster, the emphasis is on the long term climatic affects of the presence or absence of a magnetic field using the contrasts between Earth and Mars. These presentations are given using visually engaging spherical displays in conjunction with hands-on activities and scientifically accurate 3D models of planetary magnetic fields. We will summarize the content of our presentations, discuss our lessons learned from evaluations, and show (pictures of) our hands-on activities and 3D models.

  19. DURIP 99 - Instrumentation for Deposition and Etching of Ferromagnetic Nanoparticles

    National Research Council Canada - National Science Library

    Kummel, Andrew

    2000-01-01

    .... Since silver is much more difficult to etch than iron due to the lack of volatile silver halides, this spontaneous coating of Fe by Ag explains the difficulty in etching Fe particles deposited on Ag substrates. (b...

  20. Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-04-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

  1. Low surface damage dry etched black silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface dam...

  2. Special equipment for etching nitrocellulose film

    International Nuclear Information System (INIS)

    Domanus, J.C.

    1983-08-01

    Nitrocellulose film and converter screens used for neutron radiography are described. Difficulties in visualization of radiographs on those films are mentioned. Because there is no equipment for etching nitrocellulose film available on the market Risoe has designed and produced such equipment at an estimated cost of Dkr. 15,000. Design criteria for this equipment are given and its performance described

  3. Technique for etching monolayer and multilayer materials

    Science.gov (United States)

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  4. Current problems in chemical track etching

    International Nuclear Information System (INIS)

    Somogyi, G.

    1984-01-01

    A schematic survey is given on the current relevant problems of the etching (or revelation) of multi-track and single-track events in dielectric solids. Some aspects of the research trends and possible new applications of the effects observable here, are also considered. (author)

  5. Wetted Foam Liquid DT Layer ICF Experiments at the NIF

    Science.gov (United States)

    Olson, R. E.; Leeper, R. J.; Peterson, R. R.; Yi, S. A.; Zylstra, A. B.; Kline, J. L.; Bradley, P. A.; Yin, L.; Wilson, D. C.; Haines, B. M.; Batha, S. H.

    2016-10-01

    A key physics issue in indirect-drive ICF relates to the understanding of the limitations on hot spot convergence ratio (CR), principally set by the hohlraum drive symmetry, the capsule mounting hardware (the ``tent''), and the capsule fill tube. An additional key physics issue relates to the complex process by which a hot spot must be dynamically formed from the inner ice surface in a DT ice-layer implosion. These physics issues have helped to motivate the development of a new liquid DT layer wetted foam platform at the NIF that provides an ability to form the hot spot from DT vapor and experimentally study and understand hot spot formation at a variety of CR's in the range of 12hot spot and the low adiabat cold fuel during the stagnation process and can allow for a fundamentally different (and potentially more robust) process of hot spot formation. This new experimental platform is currently being used in a series of experiments to discover a range of CR's at which DT layered implosions will have understandable performance - providing a sound basis from which to determine the requirements for ICF ignition. This work was performed under the auspices of the U. S. DOE by LANL under contract DE-AC52-06NA25396.

  6. More vertical etch profile using a Faraday cage in plasma etching

    Science.gov (United States)

    Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

    1999-05-01

    Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

  7. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

    Science.gov (United States)

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

    2016-01-01

    Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (pbracket bonding after enamel conditioning with any of the SEPs tested. The SEPs used in Groups C (Xeno V

  8. Bulk and track etching of PET studied by spectrophotometer

    International Nuclear Information System (INIS)

    Zhu, Z.Y.; Duan, J.L.; Maekawa, Y.; Koshikawa, H.; Yoshida, M.

    2004-01-01

    UV-VIS spectra of poly(ethylene terephthalate) (PET) solutions formed by etching PET in NaOH solution were analyzed with respect to the etching time. A linear relationship between absorptions centered at 4.45 and 5.11 eV with weight loss of PET in NaOH solution was established. The relation was applied to study the influence of UV light illumination on bulk etching of PET and to evaluate pore size of etched-through tracks. It is found that bulk etching of PET can be greatly enhanced by UV illumination in air in the wavelength range around 313 nm. A surface area of about 350 nm in thickness shows a 23 times increase in bulk-etching rate after illuminated for 6 h. The phenomenon is attributed to the oxygen-assisted photo-degradation through generating of new photo-unstable species. The enhancement in bulk etching was immediately reduced as the etching proceeds below the surface with an exponential decay constant of about 1.5 μm -1 . Etching of Xe ion irradiated PET films gives extra etching products with similar chemical structure as revealed by spectrophotometer measurements. Quantitative analysis of etching products from latent tracks implies that pores of about 14.6 nm in radius are formed after etching in 0.74 N NaOH at 40 deg. C for 35 min, which is in agreement with the conductometric measurement

  9. Method of plastic track detector electrochemical etching

    International Nuclear Information System (INIS)

    D'yakov, A.A.

    1984-01-01

    The review of studies dealing with the development of the method for the electro-chemical etching (ECE) of the plastic track detectors on the base of polyethy-leneterephthalate (PET) and polycarbonate (PC) is given. Physical essence of the method, basic parameters of the processes, applied equipment and methods of measurement automation are considered. The advantages of the method over the traditional chemical etching are pointed out. Recommendations on the detector operation modes when detecting fission fragments, α-particles and fast neutrons are given. The ECE method is based on the condition that during chemical etching the high-voltage sound frequency alternating electric field is applied to the detector. In this case the detector serves as an isolating layer betWeen two vessels with etching solution in which high-voltage electrode are submerged. At a fixed electric field potential higher (over than the threshold value) at the end of the etching track cone atree-like discharge spot arises. It is shown that when PET is used for fast neutron detection it is advisable to apply for ECE the PEW solution (15g KOH+40 g C 2 H 2 OH + 45g H 2 O) the field potential should constitute 30 kVxcm -1 at the freqUency of 9 kHz. In the case of fission fragment detection Using ECE and PC the following ECE conditions are recommended: 30% KOH etcher, field potential of 10 kVxcm -1 , 2-4 kHz frequency. It is concluded that the ECE method permits considerably eXtend the sphere of plastic track detector application for detecting ionizing particles,

  10. Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

    International Nuclear Information System (INIS)

    Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

    2008-01-01

    Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

  11. WET SOLIDS FLOW ENHANCEMENT; SEMIANNUAL

    International Nuclear Information System (INIS)

    Hugo S Caram; Natalie Foster

    1998-01-01

    The strain-stress behavior of a wet granular media was measured using a split Parfitt tensile tester. In all cases the stress increases linearly with distance until the maximum uniaxial tensile stress is reached. The stress then decreases exponentially with distance after this maximum is reached. The linear region indicates that wet solids behave elastically for stresses below the tensile stresses and can store significant elastic energy. The elastic deformation cannot be explained by analyzing the behavior of individual capillary bridges and may require accounting for the deformation of the solids particles. The elastic modulus of the wet granular material remains unexplained

  12. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    Abdalla, A.I.; Feilzer, A.J.

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

  13. Effect of Dentin Wetness on the Bond Strength of Universal Adhesives

    Directory of Open Access Journals (Sweden)

    An-Na Choi

    2017-10-01

    Full Text Available The effects of dentin wetness on the bond strength and adhesive interface morphology of universal adhesives have been investigated using micro-tensile bond strength (μTBS testing and confocal laser scanning microscopy (CLSM. Seventy-two human third molars were wet ground to expose flat dentin surfaces. They were divided into three groups according to the air-drying time of the dentin surfaces: 0 (without air drying, 5, and 10 s. The dentin surfaces were then treated with three universal adhesives: G-Premio Bond, Single Bond Universal, and All-Bond Universal in self-etch or etch-and-rinse mode. After composite build up, a μTBS test was performed. One additional tooth was prepared for each group by staining the adhesives with 0.01 wt % of Rhodamine B fluorescent dye for CLSM analysis. The data were analyzed statistically using ANOVA and Tukey’s post hoc tests (α = 0.05. Two-way ANOVA showed significant differences among the adhesive systems and dentin moisture conditions. An interaction effect was also observed (p < 0.05. One-way ANOVA showed that All-Bond Universal was the only material influenced by the wetness of the dentin surfaces. Wetness of the dentin surface is a factor influencing the micro-tensile bond strength of universal adhesives.

  14. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  15. Fabrication of a vertical sidewall using double-sided anisotropic etching of 〈1 0 0〉 oriented silicon

    International Nuclear Information System (INIS)

    Kim, Hyun-Seok; Bang, Yong-Seung; Song, Eun-Seok; Kim, Yong-Kweon; Kim, Jung-Mu; Ji, Chang-Hyeon

    2012-01-01

    A double-sided wet etch process has been proposed to fabricate vertical structures in 〈1 0 0〉 oriented silicon substrate. Both sides of a {1 0 0} silicon wafer have been patterned identically along the 〈1 1 0〉 direction, and etched using potassium hydroxide (KOH) solution. By precisly controlling the etch time, using etch-timer structure and additive control, structures with smooth and vertical {1 1 0} sidewalls have been fabricated at the edges of a rectangular opening without undercut. Rectangular through-holes, bridges and cantilevers have been constructed using the proposed process. The measured average surface roughness of the vertical sidewall was 481 nm, which has been further reduced to 217 nm and 218 nm by postetching using a KOH–IPA and TMAH–Triton mixture, respectively. Slanted {4 1 1} planes exposed at the concave corners during the vertical etch process have been successfully removed or diminished by the postetching process. A bridge structure with a high aspect ratio of 39:1 has been fabricated, and cantilevers without undercutting were successfully constructed by applying the compensation technique. The proposed process can potentially be utilized in place of the deep reactive ion etching process for the fabrication of structures having vertical through-holes, such as through-silicon vias, high aspect ratio springs and filters for microfluidic applications. (paper)

  16. Accelerated Drying of Wet Boots

    National Research Council Canada - National Science Library

    Dyck, Walter

    2002-01-01

    .... One such material is sodium polyacrylate. Because recent field trials with Canadian Forces soldiers have reconfirmed that donning wet combat boots is very uncomfortable, a study was done to assess the efficacy of using sodium polyacrylate...

  17. Comparative study of resist stabilization techniques for metal etch processing

    Science.gov (United States)

    Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

    1999-06-01

    This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

  18. Influence factors on etching rate of PET nuclear pore membrane

    International Nuclear Information System (INIS)

    Zuo Zhenzhong; Wu Zhendong; Liang Haiying; Ju Wei; Chen Dongfeng; Fu Yuanyong; Qu Guopu

    2014-01-01

    Background: The nuclear pore membrane is a kind of liquid filtration material manufactured by irradiation and chemical etching. Various conditions in etch process have a great influence on etch rate. Purpose: The influence factors of concentration and temperature of etch solution and the irradiation energy of heavy ions on etch rate was studied. Methods: Four layers of PET (polyethylene terephthalate) films were stacked together and were irradiated with 140-MeV 32 S ions at room temperature under vacuum conditions. Utilizing conductivity measurement technique, the electrical current changes through the u:radiated PET film were monitored during etching, from which the breakthrough time and therefore the track etching rate was calculated. Results: The results show that there is an exponential correlation between etch rate and temperature, and a linear correlation between etch rate and concentration. The track etching rate increases linearly with energy loss rate. Empirical formula for the bulk etching rate as a function of etchant concentration and temperature was also established via fitting of measurements. Conclusion: It is concluded that by using 1.6-MeV·u -1 32 S ions, PET nuclear pore membrane with cylindrical pore shape can be prepared at 85℃ with etchant concentration of l mol·L -1 . (authors)

  19. Si etching with reactive neutral beams of very low energy

    Energy Technology Data Exchange (ETDEWEB)

    Hara, Yasuhiro [Organization for Research and Development of Innovative Science and Technology, Kansai University, 3-3-35 Yamate-chou, Suita, Osaka 565-0871 (Japan); Hamagaki, Manabu; Mise, Takaya [RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan); Iwata, Naotaka; Hara, Tamio [Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku-ku, Nagoya 468-8511 (Japan)

    2014-12-14

    A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

  20. Effect of Phosphoric Acid Pre-etching on Fatigue Limits of Self-etching Adhesives.

    Science.gov (United States)

    Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Scheidel, D D; Erickson, R L; Latta, M A; Miyazaki, M

    2015-01-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue limit (SFL) testing to determine the effect of phosphoric acid pre-etching of enamel and dentin prior to application of self-etch adhesives for bonding resin composite to these substrates. Three self-etch adhesives--1) G- ænial Bond (GC Corporation, Tokyo, Japan); 2) OptiBond XTR (Kerr Corp, Orange, CA, USA); and 3) Scotchbond Universal (3M ESPE Dental Products, St Paul, MN, USA)--were used to bond Z100 Restorative resin composite to enamel and dentin surfaces. A stainless-steel metal ring with an inner diameter of 2.4 mm was used to bond the resin composite to flat-ground (4000 grit) tooth surfaces for determination of both SBS and SFL. Fifteen specimens each were used to determine initial SBS to human enamel/dentin, with and without pre-etching with a 35% phosphoric acid (Ultra-Etch, Ultradent Products Inc, South Jordan, UT, USA) for 15 seconds prior to the application of the adhesives. A staircase method of fatigue testing (25 specimens for each test) was then used to determine the SFL of resin composite bonded to enamel/dentin using a frequency of 10 Hz for 50,000 cycles or until failure occurred. A two-way analysis of variance and Tukey post hoc test were used for analysis of SBS data, and a modified t-test with Bonferroni correction was used for the SFL data. Scanning electron microscopy was used to examine the area of the bonded restorative/tooth interface. For all three adhesive systems, phosphoric acid pre-etching of enamel demonstrated significantly higher (padhesives clearly demonstrated different tendencies between enamel and dentin. The effect of using phosphoric acid, prior to the application of the self-etching adhesives, on SBS and SFL was dependent on the adhesive material and tooth substrate and should be carefully considered in clinical situations.

  1. Wet-Bulb-Globe Temperature Data Report

    Science.gov (United States)

    2015-03-01

    Hour Min Pressure Dry Nat Wet Globe Dry Nat Wet Globe Dry Nat Wet Globe Wind Cld amt Cld type Obscuration Quest RH Kestrel RH VPSc RH S1 WBGT Q WBGT...Wet Globe Dry Nat Wet Globe Dry Nat Wet Globe Wind Cld amt Cld type Obscuration Quest RH Kestrel RH VPSc RH S1 WBGT Q WBGT K2 WBGT GMT millibars deg F...Dry Nat Wet Globe Dry Nat Wet Globe Wind Cld amt Cld type Obscuration Quest RH Kestrel RH VPSc RH S1 WBGT Q WBGT K2 WBGT GMT millibars deg F deg F deg

  2. Solar 'hot spots' are still hot

    Science.gov (United States)

    Bai, Taeil

    1990-01-01

    Longitude distributions of solar flares are not random but show evidence for active zones (or hot spots) where flares are concentrated. According to a previous study, two hot spots in the northern hemisphere, which rotate with a synodic period of about 26.72 days, produced the majority of major flares, during solar cycles 20 and 21. The more prominent of these two hot spots is found to be still active during the rising part of cycle 22, producing the majority of northern hemisphere major flares. The synodic rotation period of this hot spot is 26.727 + or - 0.007 days. There is also evidence for hot spots in the southern hemisphere. Two hot spots separated by 180 deg are found to rotate with a period of 29.407 days, with one of them having persisted in the same locations during cycles 19-22 and the other, during cycles 20-22.

  3. Solar hot spots are still hot

    International Nuclear Information System (INIS)

    Bai, T.

    1990-01-01

    Longitude distributions of solar flares are not random but show evidence for active zones (or hot spots) where flares are concentrated. According to a previous study, two hot spots in the northern hemisphere, which rotate with a synodic period of about 26.72 days, produced the majority of major flares, during solar cycles 20 and 21. The more prominent of these two hot spots is found to be still active during the rising part of cycle 22, producing the majority of northern hemisphere major flares. The synodic rotation period of this hot spot is 26.727 + or - 0.007 days. There is also evidence for hot spots in the southern hemisphere. Two hot spots separated by 180 deg are found to rotate with a period of 29.407 days, with one of them having persisted in the same locations during cycles 19-22 and the other, during cycles 20-22. 14 refs

  4. Wetting properties of hybrid structure with hydrophilic ridges and hydrophobic channels

    Science.gov (United States)

    Lee, Dong-Ki; Choi, Su Young; Park, Min Soo; Cho, Young Hak

    2018-02-01

    In the present study, we fabricated a hybrid structure where the upper surface of the ridge is hydrophilic and the inner surface of the channel is hydrophobic. Laser-induced backside wet etching (LIBWE) process was performed to machine the hybrid structure on a Pyrex glass substrate. Wetting properties were evaluated from static contact angles (CAs) measurement in parallel and orthogonal directions. The water droplet on the hybrid structure was in the Cassie-Baxter state and showed anisotropic wetting property along groove lines. Moisture condensation studies under humid condition indicated that water droplets grew and coalesced on the ridge with hydrophilicity. Furthermore, water-oil separation was tested using a microfluidic chip with the developed hybrid structure. In case of hybrid microfluidic chip, the water could not flow into channel but the hexadecane could flow due to the capillary pressure difference.

  5. Wafer scale oblique angle plasma etching

    Science.gov (United States)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  6. Effect of a whitening agent application on enamel bond strength of self-etching primer systems.

    Science.gov (United States)

    Miyazaki, Masashi; Sato, Hikaru; Sato, Tomomi; Moore, B Keith; Platt, Jeffrey A

    2004-06-01

    Though reduction in bond strength after tooth whitening has been reported, little is known about it's effect on enamel bond strength of two-step bonding systems that exclude phosphoric acid etching prior to bonding agent application. The purpose of this study was to determine the effect of whitening procedure using an in-office whitening agent on enamel bond strength of self-etching primer systems. Three self-etching primer systems, Imperva Fluoro Bond, Mac Bond II, Clearfil SE Bond, and a one-bottle adhesive system Single Bond as a control material, were used. Bovine mandibular incisors were mounted in self-curing resin and the facial enamel or dentin surfaces were ground wet on 600-grit SiC paper. An in-office whitening agent, Hi-Lite was applied on the tooth surface according to the manufacturer's instruction. Bonding procedures were done soon after rinsing off the whitening agent or after 24 hours storage in distilled water. Specimens without whitening procedure were prepared as controls. Fifteen specimens per test group were stored in 37 degrees C distilled water for 24 hours, then shear tested at a crosshead speed of 1.0 mm/minute. One-way ANOVA followed by Duncan multiple range test were used for statistical analysis of the results. For the specimens made soon after rinsing off the whitening agent, a significant decrease in enamel bond strength was observed for all the bonding systems used. For the specimens made after 24 hours storage in water, a small decrease in enamel bond strength was observed and no significant differences were found compared to those of controls (without whitening). From the results of this study, enamel bond strengths of the self-etching primer systems might be affected to a lesser degree after rinsing with water followed by 24 hours storage in water.

  7. Etching of glass microchips with supercritical water

    Czech Academy of Sciences Publication Activity Database

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-01

    Roč. 15, č. 1 (2015), s. 311-318 ISSN 1473-0197 R&D Projects: GA ČR(CZ) GAP106/12/0522; GA ČR(CZ) GBP206/12/G014; GA MŠk(CZ) EE2.3.20.0182 Institutional support: RVO:68081715 Keywords : glass microchips * channel etching * supercritical water Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 5.586, year: 2015

  8. Ethanol wet-bonding technique sensitivity assessed by AFM.

    Science.gov (United States)

    Osorio, E; Toledano, M; Aguilera, F S; Tay, F R; Osorio, R

    2010-11-01

    In ethanol wet bonding, water is replaced by ethanol to maintain dehydrated collagen matrices in an extended state to facilitate resin infiltration. Since short ethanol dehydration protocols may be ineffective, this study tested the null hypothesis that there are no differences in ethanol dehydration protocols for maintaining the surface roughness, fibril diameter, and interfibrillar spaces of acid-etched dentin. Polished human dentin surfaces were etched with phosphoric acid and water-rinsed. Tested protocols were: (1) water-rinse (control); (2) 100% ethanol-rinse (1-min); (3) 100% ethanol-rinse (5-min); and (4) progressive ethanol replacement (50-100%). Surface roughness, fibril diameter, and interfibrillar spaces were determined with atomic force microscopy and analyzed by one-way analysis of variance and the Student-Newman-Keuls test (α = 0.05). Dentin roughness and fibril diameter significantly decreased when 100% ethanol (1-5 min) was used for rinsing (p ethanol produced collapse and shrinkage of collagen fibrils. Ascending ethanol concentrations did not collapse the matrix and shrank the fibrils less than absolute ethanol-rinses.

  9. Predicting synergy in atomic layer etching

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J. [Lam Research Corp., Fremont, CA (United States); Tan, Samantha [Lam Research Corp., Fremont, CA (United States); Yang, Wenbing [Lam Research Corp., Fremont, CA (United States); Kim, Taeseung [Lam Research Corp., Fremont, CA (United States); Lill, Thorsten [Lam Research Corp., Fremont, CA (United States); Kabansky, Alexander [Lam Research Corp., Fremont, CA (United States); Hudson, Eric A. [Lam Research Corp., Fremont, CA (United States); Ohba, Tomihito [Lam Research Corp., Fremont, CA (United States); Nojiri, Kazuo [Lam Research Corp., Fremont, CA (United States); Yu, Jengyi [Lam Research Corp., Fremont, CA (United States); Wise, Rich [Lam Research Corp., Fremont, CA (United States); Berry, Ivan L. [Lam Research Corp., Fremont, CA (United States); Pan, Yang [Lam Research Corp., Fremont, CA (United States); Marks, Jeffrey [Lam Research Corp., Fremont, CA (United States); Gottscho, Richard A. [Lam Research Corp., Fremont, CA (United States)

    2017-03-27

    Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.

  10. Laser etching of polymer masked leadframes

    Science.gov (United States)

    Ho, C. K.; Man, H. C.; Yue, T. M.; Yuen, C. W.

    1997-02-01

    A typical electroplating production line for the deposition of silver pattern on copper leadframes in the semiconductor industry involves twenty to twenty five steps of cleaning, pickling, plating, stripping etc. This complex production process occupies large floor space and has also a number of problems such as difficulty in the production of rubber masks and alignment, generation of toxic fumes, high cost of water consumption and sometimes uncertainty on the cleanliness of the surfaces to be plated. A novel laser patterning process is proposed in this paper which can replace many steps in the existing electroplating line. The proposed process involves the application of high speed laser etching techniques on leadframes which were protected with polymer coating. The desired pattern for silver electroplating is produced by laser ablation of the polymer coating. Excimer laser was found to be most effective for this process as it can expose a pattern of clean copper substrate which can be silver plated successfully. Previous working of Nd:YAG laser ablation showed that 1.06 μm radiation was not suitable for this etching process because a thin organic and transparent film remained on the laser etched region. The effect of excimer pulse frequency and energy density upon the removal rate of the polymer coating was studied.

  11. Shapes of agglomerates in plasma etching reactors

    International Nuclear Information System (INIS)

    Huang, F.Y.; Kushner, M.J.

    1997-01-01

    Dust particle contamination of wafers in reactive ion etching (RIE) plasma tools is a continuing concern in the microelectronics industry. It is common to find that particles collected on surfaces or downstream of the etch chamber are agglomerates of smaller monodisperse spherical particles. The shapes of the agglomerates vary from compact, high fractal dimension structures to filamentary, low fractal dimension structures. These shapes are important with respect to the transport of particles in RIE tools under the influence electrostatic and ion drag forces, and the possible generation of polarization forces. A molecular dynamics simulation has been developed to investigate the shapes of agglomerates in plasma etching reactors. We find that filamentary, low fractal dimension structures are generally produced by smaller (<100s nm) particles in low powered plasmas where the kinetic energy of primary particles is insufficient to overcome the larger Coulomb repulsion of a compact agglomerate. This is analogous to the diffusive regime in neutral agglomeration. Large particles in high powered plasmas generally produce compact agglomerates of high fractal dimension, analogous to ballistic agglomeration of neutrals. copyright 1997 American Institute of Physics

  12. Low surface damage dry etched black silicon

    Science.gov (United States)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt; Lindhard, Jonas Michael; Hirsch, Jens; Lausch, Dominik; Schmidt, Michael Stenbæk; Stamate, Eugen; Hansen, Ole

    2017-10-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface damage that causes significant recombination. Here, we present a process optimization strategy for bSi, where surface damage is reduced and surface passivation is improved while excellent light trapping and low reflectance are maintained. We demonstrate that reduction of the capacitively coupled plasma power, during reactive ion etching at non-cryogenic temperature (-20 °C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 μs for both polished and bSi surfaces.

  13. Track-etch membranes enabled nano-/microtechnology: A review

    International Nuclear Information System (INIS)

    Chakarvarti, S.K.

    2009-01-01

    The art and science of fabricating structures with nano-/micrometric dimensions as well as precision is of the immense concern to any one investigating into nano-/microtechnology. The synergetic support of radiation and its potential in combining radiation effects with nano-/micromaterials has been recognized from the very early stages of nano-science research. In the myriad of applications and uses of nano-/microstructures, and nano particles in particular, from filtration, fabrication of biosensors, a chemical catalysis, magnetic structures, nano-electronics, MEMS, mechano-chemical conversion, quantum computing etc to name a few, radiation can play a significant role. One such potential application is track-etch membranes- a spin-off from the matter-radiation interaction. In the recent years, there has been a tremendous leap in the potential applications of metallic as well as non-metallic nano-/microstructures and materials. Nanotechnology has initiated a big hop and appears to be all set for bringing in revolution in the development and advancement of techniques involved in the synthesis and fabrication of sensors and devices. The conventional techniques for fabrication of very low dimensional wires - say quantum wires, include wet chemistry, electron beam lithography, focused ion beam techniques and atomic-beam lithography but for certain drawbacks and problems mentioned further. That has shown the ways for adopting newer alternative approaches which are relatively inexpensive, easier to handle and synergistically adorned with high efficacy. It is now well known that size of the devices and components dictate many unusual traits where quantum effects become more predominant. Quasi-one-dimensional nanostructures and materials like nanowires, fibres, tubules etc, having high aspect ratio would provide unusual and uncommon properties. Some properties like strength and hardness enhancement, dramatic changes in electrical conduction, field-ion-emission through

  14. Track-etch membranes enabled nano-/microtechnology: A review

    Energy Technology Data Exchange (ETDEWEB)

    Chakarvarti, S.K., E-mail: skchakarvarti@gmail.co [Department of Physics, National Institute of Technology, Institution of National Importance, Kurukshetra 136 119 (India)

    2009-10-15

    The art and science of fabricating structures with nano-/micrometric dimensions as well as precision is of the immense concern to any one investigating into nano-/microtechnology. The synergetic support of radiation and its potential in combining radiation effects with nano-/micromaterials has been recognized from the very early stages of nano-science research. In the myriad of applications and uses of nano-/microstructures, and nano particles in particular, from filtration, fabrication of biosensors, a chemical catalysis, magnetic structures, nano-electronics, MEMS, mechano-chemical conversion, quantum computing etc to name a few, radiation can play a significant role. One such potential application is track-etch membranes- a spin-off from the matter-radiation interaction. In the recent years, there has been a tremendous leap in the potential applications of metallic as well as non-metallic nano-/microstructures and materials. Nanotechnology has initiated a big hop and appears to be all set for bringing in revolution in the development and advancement of techniques involved in the synthesis and fabrication of sensors and devices. The conventional techniques for fabrication of very low dimensional wires - say quantum wires, include wet chemistry, electron beam lithography, focused ion beam techniques and atomic-beam lithography but for certain drawbacks and problems mentioned further. That has shown the ways for adopting newer alternative approaches which are relatively inexpensive, easier to handle and synergistically adorned with high efficacy. It is now well known that size of the devices and components dictate many unusual traits where quantum effects become more predominant. Quasi-one-dimensional nanostructures and materials like nanowires, fibres, tubules etc, having high aspect ratio would provide unusual and uncommon properties. Some properties like strength and hardness enhancement, dramatic changes in electrical conduction, field-ion-emission through

  15. Studies of biocompatibility of chemically etched CR-39 SSNTDs in view of their applications in alpha-particle radiobiological experiments

    International Nuclear Information System (INIS)

    Li, W.Y.; Chan, K.F.; Tse, A.K.W.; Fong, W.F.; Yu, K.N.

    2006-01-01

    Alpha-particle radiobiological experiments involve irradiating cells with alpha particles and require thin biocompatible materials which can record alpha-particle traversals as substrates for cell cultures. The biocompatibilities of chemically etched CR-39 solid-state nuclear track detectors (SSNTDs) using aqueous NaOH or NaOH/ehtanol are studied through the abundance and morphology of the cultured HeLa cells. The wetting properties of these etched CR-39 SSNTDs are also studied. The moderately hydrophobic CR-39 SSNTDs as well as the hydrophobic NaOH/ethanol-etched CR-39 SSNTDs are more biocompatible than the hydrophilic aqueous-NaOH-etched SSNTDs. Too small water contact angles, too large surface energy (γ s ) or the polar component γ s p do not favor the cell culture. On the other hand, the dispersive component γ s d of the surface energy and the ratio γ s p /γ s d do not seem to significantly affect the biocompatibility

  16. Wetting of Water on Graphene

    KAUST Repository

    Bera, Bijoyendra; Shahidzadeh, Noushine; Mishra, Himanshu; Bonn, Daniel

    2016-01-01

    The wetting properties of graphene have proven controversial and difficult to assess. The presence of a graphene layer on top of a substrate does not significantly change the wetting properties of the solid substrate, suggesting that a single graphene layer does not affect the adhesion between the wetting phase and the substrate. However, wetting experiments of water on graphene show contact angles that imply a large amount of adhesion. Here, we investigate the wetting of graphene by measuring the mass of water vapor adsorbing to graphene flakes of different thickness at different relative humidities. Our experiments unambiguously show that the thinnest of graphene flakes do not adsorb water, from which it follows that the contact angle of water on these flakes is ~180o. Thicker flakes of graphene nanopowder, on the other hand, do adsorb water. A calculation of the van der Waals (vdW) interactions that dominate the adsorption in this system confirms that the adhesive interactions between a single atomic layer of graphene and water are so weak that graphene is superhydrophobic. The observations are confirmed in an independent experiment on graphene-coated water droplets that shows that it is impossible to make liquid 'marbles' with molecularly thin graphene.

  17. Wetting of Water on Graphene

    KAUST Repository

    Bera, Bijoyendra

    2016-11-28

    The wetting properties of graphene have proven controversial and difficult to assess. The presence of a graphene layer on top of a substrate does not significantly change the wetting properties of the solid substrate, suggesting that a single graphene layer does not affect the adhesion between the wetting phase and the substrate. However, wetting experiments of water on graphene show contact angles that imply a large amount of adhesion. Here, we investigate the wetting of graphene by measuring the mass of water vapor adsorbing to graphene flakes of different thickness at different relative humidities. Our experiments unambiguously show that the thinnest of graphene flakes do not adsorb water, from which it follows that the contact angle of water on these flakes is ~180o. Thicker flakes of graphene nanopowder, on the other hand, do adsorb water. A calculation of the van der Waals (vdW) interactions that dominate the adsorption in this system confirms that the adhesive interactions between a single atomic layer of graphene and water are so weak that graphene is superhydrophobic. The observations are confirmed in an independent experiment on graphene-coated water droplets that shows that it is impossible to make liquid \\'marbles\\' with molecularly thin graphene.

  18. Phase change materials and the perception of wetness.

    Science.gov (United States)

    Tiest, Wouter M Bergmann; Kosters, N Dolfine; Kappers, Astrid M L; Daanen, Hein A M

    2012-01-01

    Phase change materials (PCMs) are increasingly incorporated in textiles in order to serve as a thermal buffer when humans change from a hot to a cold environment and the reverse. Due to the absence of wetness sensors in the skin, cooling of the skin may be perceived as a sensation of wetness instead of cold. In order to investigate if this phenomenon occurs when manipulating textiles, nine subjects were asked to touch or manipulate PCM-treated and untreated fabrics. In 75% of the cases, the subjects indicated that the treated material felt wetter than the untreated material independent of the way the textiles were manipulated. We conclude that incorporating PCMs in textiles may lead to a feeling of wetness which might be uncomfortable. Therefore, we recommend investigating a change in cooling properties to minimise this feeling. This article describes a psychophysical experiment into the sensation of wetness of textiles treated with phase change materials. It was found that in 75% of the cases, subjects found the treated fabric to feel wetter than the untreated. This may affect the comfort of wearing clothes made of these textiles.

  19. Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

    Science.gov (United States)

    Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

    2018-04-01

    A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

  20. In vitro bonding effectiveness of three different one-step self-etch adhesives with additional enamel etching.

    Science.gov (United States)

    Batra, Charu; Nagpal, Rajni; Tyagi, Shashi Prabha; Singh, Udai Pratap; Manuja, Naveen

    2014-08-01

    To evaluate the effect of additional enamel etching on the shear bond strength of three self-etch adhesives. Class II box type cavities were made on extracted human molars. Teeth were randomly divided into one control group of etch and rinse adhesive and three test groups of self-etch adhesives (Clearfil S3 Bond, Futurabond NR, Xeno V). The teeth in the control group (n = 10) were treated with Adper™ Single Bond 2. The three test groups were further divided into two subgroups (n = 10): (i) self-etch adhesive was applied as per the manufacturer's instructions; (ii) additional etching of enamel surfaces was done prior to the application of self-etch adhesives. All cavities were restored with Filtek Z250. After thermocycling, shear bond strength was evaluated using a Universal testing machine. Data were analyzed using anova independent sample's 't' test and Dunnett's test. The failure modes were evaluated with a stereomicroscope at a magnification of 10×. Additional phosphoric acid etching of the enamel surface prior to the application of the adhesive system significantly increased the shear bond strength of all the examined self-etch adhesives. Additional phosphoric acid etching of enamel surface significantly improved the shear bond strength. © 2013 Wiley Publishing Asia Pty Ltd.

  1. Hot tub folliculitis

    Science.gov (United States)

    ... survives in hot tubs, especially tubs made of wood. Symptoms The first symptom of hot tub folliculitis ... may help prevent the problem. Images Hair follicle anatomy References D'Agata E. Pseudomonas aeruginosa and other ...

  2. Hot Laboratories and Remote Handling

    International Nuclear Information System (INIS)

    Bart, G.; Blanc, J.Y.; Duwe, R.

    2003-01-01

    The European Working Group on ' Hot Laboratories and Remote Handling' is firmly established as the major contact forum for the nuclear R and D facilities at the European scale. The yearly plenary meetings intend to: - Exchange experience on analytical methods, their implementation in hot cells, the methodologies used and their application in nuclear research; - Share experience on common infrastructure exploitation matters such as remote handling techniques, safety features, QA-certification, waste handling; - Promote normalization and co-operation, e.g., by looking at mutual complementarities; - Prospect present and future demands from the nuclear industry and to draw strategic conclusions regarding further needs. The 41. plenary meeting was held in CEA Saclay from September 22 to 24, 2003 in the premises and with the technical support of the INSTN (National Institute for Nuclear Science and Technology). The Nuclear Energy Division of CEA sponsored it. The Saclay meeting was divided in three topical oral sessions covering: - Post irradiation examination: new analysis methods and methodologies, small specimen technology, programmes and results; - Hot laboratory infrastructure: decommissioning, refurbishment, waste, safety, nuclear transports; - Prospective research on materials for future applications: innovative fuels (Generation IV, HTR, transmutation, ADS), spallation source materials, and candidate materials for fusion reactor. A poster session was opened to transport companies and laboratory suppliers. The meeting addressed in three sessions the following items: Session 1 - Post Irradiation Examinations. Out of 12 papers (including 1 poster) 7 dealt with surface and solid state micro analysis, another one with an equally complex wet chemical instrumental analytical technique, while the other four papers (including the poster) presented new concepts for digital x-ray image analysis; Session 2 - Hot laboratory infrastructure (including waste theme) which was

  3. Modelling Hot Air Balloons.

    Science.gov (United States)

    Brimicombe, M. W.

    1991-01-01

    A macroscopic way of modeling hot air balloons using a Newtonian approach is presented. Misleading examples using a car tire and the concept of hot air rising are discussed. Pressure gradient changes in the atmosphere are used to explain how hot air balloons work. (KR)

  4. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2017-01-30

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  5. Study on the etched carnelian beads unearthed in China

    Institute of Scientific and Technical Information of China (English)

    Deyun Zhao

    2014-01-01

    Etched carnelian beads originated in the Indus Civilization;this kind of ornaments and its manufacturing techniques were spread to the whole Eurasia Continent.The etched carnelian beads unearthed in China can be classified into four types,the comparisons of which to their foreign counterparts may reveal their different sources and diffusion routes.The etched carnelian beads and their glass imitations unearthed in China had influences to the making of the glass "eye beads" in

  6. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    International Nuclear Information System (INIS)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  7. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    OpenAIRE

    Ajay Kumar; Dr. Pramod Kumar

    2014-01-01

    This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF) optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that th...

  8. Effects of etching time on enamel bond strengths.

    Science.gov (United States)

    Triolo, P T; Swift, E J; Mudgil, A; Levine, A

    1993-12-01

    This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

  9. Optimization of some electrochemical etching parameters for cellulose derivatives

    International Nuclear Information System (INIS)

    Chowdhury, Annis; Gammage, R.B.

    1978-01-01

    Electrochemical etching of fast neutron induced recoil particle tracks in cellulose derivatives and other polymers provides an inexpensive and sensitive means of fast neutron personnel dosimetry. A study of the shape, clarity, and size of the tracks in Transilwrap polycarbonate indicated that the optimum normality of the potassium hydroxide etching solution is 9 N. Optimizations have also been attempted for cellulose nitrate, triacetate, and acetobutyrate with respect to such electrochemical etching parameters as frequency, voltage gradient, and concentration of the etching solution. The measurement of differential leakage currents between the undamaged and the neutron damaged foils aided in the selection of optimum frequencies. (author)

  10. 3D memory: etch is the new litho

    Science.gov (United States)

    Petti, Christopher

    2018-03-01

    This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

  11. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    and even contaminate the surface with metal flakes after resist removal. Ion beam etching has also been used for etching of steel without any problems with redeposition. For steel the etch rate was low which reduced the selectivity to the photo resist. Sapphire, a crystal of aluminum oxide, has a very low....... However, just generating an oxygen plasma does not result in a controllable etch and may give rise to a poor surface for later use. It may be necessary to introduce other gases such as SF6 to reduce surface roughness. Roughness can also be introduced by the mask in the form of redeposition of material...

  12. Preparation of Track Etch Membrane Filters Using Polystyrene Film

    International Nuclear Information System (INIS)

    Kaewsaenee, Jerawut; Ratanatongchai, Wichian; Supaphol, Pitt; Visal-athaphand, Pinpan

    2007-08-01

    Full text: Polystyrene nuclear track etch membrane filters was prepared by exposed 13 .m thin film polystyrene with fission fragment. Nuclear latent track was enlarged to through hole on the film by etching with 80 o C 40% H 2 SO 4 with K 2 Cr 2 O 7 solution for 6-10 hour. The hole size was depend on concentration of etching solution and etching time with 1.3-3.4 .m hole diameter. The flow rate test of water was 0.79-1.56 mm cm-2 min-1 at 109.8-113.7 kPa pressure

  13. Ion-beam etching of ramps in thin film heterostructures

    International Nuclear Information System (INIS)

    Mozhaev, P. B.; Mozhaeva, Ju. E.; Komissinskii, P. V.

    2002-01-01

    Ion-beam patterning of thin films and heterostructures is one of the most common processes of fabrication of thin film devices and structures. 'Directed' nature of ion-beam etching provides a possibility to form certain profiles on the films surface, like shallow ramps, when etching is performed at some inclination angle. A simple geometrical model is presented, describing the formation of a ramp as a shadow of the mask on the film surface. Good agreement with the experiment can be obtained if the mask etching is taken into account. The etching at the opposite direction ('high-angle etching') also can be satisfactory described by the model. The profile of the slope - positive or negative curvature, pits near the end of the ramp - is discussed as a function of the etch rate dependence on the incidence angle. Such etch rate dependences for some often used materials were measured. An area of instability of the resulting ramp shape is found for the 'high-angle etching'. The model is compared with the experimental data reported by other groups. Finally ion-beam etching of a rotating sample at non-normal incidence is discussed, the results are compared with experimental data. (Authors)

  14. Chemical etching of fission tracks in ethylene-tetrafluoroethylene copolymer

    International Nuclear Information System (INIS)

    Komaki, Y.; Tsujimura, S.; Seguchi, T.

    1979-01-01

    The chemical etching of fission tracks in ethylene-tetrafluoroethylene copolymer was studied. Etched holes 3000 to 4000 A in diameter were recognized by electron microscopy for a film bombarded by fission fragments in oxygen and etched in a 12N sodium hydroxide solution at 125 0 C. The radial etching rate at 125 0 C was 6 to 8 A/hr, which is less than 17 A/hr for polyvinylidene fluoride in the same sodium hydroxide concentration at 85 0 C. The smaller rate is a reflection of the larger chemical resistivity of ethylene-tetrafluoroethylene copolymer than polyvinylidene fluoride. (author)

  15. Influence of asymmetric etching on ion track shapes in polycarbonate

    International Nuclear Information System (INIS)

    Clochard, M.-C.; Wade, T.L.; Wegrowe, J.-E.; Balanzat, E.

    2007-01-01

    By combining low-energy ion irradiation with asymmetric etching, conical nanopores of controlled geometry can be etched in polycarbonate (PC). Cone bases vary from 0.5 to 1 μm. Top diameters down to 17 nm are reached. When etching from one side, the pH on the other side (bathed in neutral or acidic buffer) was monitored. Etching temperature ranged from 65 deg. C to 80 deg. C. Pore shape characterization was achieved by electro replication combined with SEM observation. The tip shape depended on whether an acidic buffer was used or not on the stopped side

  16. Modeling of the angular dependence of plasma etching

    International Nuclear Information System (INIS)

    Guo Wei; Sawin, Herbert H.

    2009-01-01

    An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl 2 plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at ∼60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10 15 atoms/cm 2 on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

  17. Does Surface Roughness Amplify Wetting?

    Czech Academy of Sciences Publication Activity Database

    Malijevský, Alexandr

    2014-01-01

    Roč. 141, č. 18 (2014), s. 184703 ISSN 0021-9606 R&D Projects: GA ČR GA13-09914S Institutional support: RVO:67985858 Keywords : density functional theory * wetting * roughness Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.952, year: 2014

  18. Symphony and cacophony in ion track etching: how to control etching results

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Kiv, A.; Cruz, S. A.; Munoz, G. H.; Vacík, Jiří

    2012-01-01

    Roč. 167, č. 7 (2012), s. 527-540 ISSN 1042-0150 R&D Projects: GA AV ČR IAA200480702 Institutional support: RVO:61389005 Keywords : ion track s * polymers * etching * diodes * resistances Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.502, year: 2012

  19. In vitro evaluation of microleakage around orthodontic brackets using laser etching and Acid etching methods.

    Directory of Open Access Journals (Sweden)

    Mohammad Hossein Toodehzaeim

    2014-06-01

    Full Text Available path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques.The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1, laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2, and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3. After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test.For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups.According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding.

  20. Water regime history drives responses of soil Namib Desert microbial communities to wetting events

    Science.gov (United States)

    Frossard, Aline; Ramond, Jean-Baptiste; Seely, Mary; Cowan, Don A.

    2015-07-01

    Despite the dominance of microorganisms in arid soils, the structures and functional dynamics of microbial communities in hot deserts remain largely unresolved. The effects of wetting event frequency and intensity on Namib Desert microbial communities from two soils with different water-regime histories were tested over 36 days. A total of 168 soil microcosms received wetting events mimicking fog, light rain and heavy rainfall, with a parallel “dry condition” control. T-RFLP data showed that the different wetting events affected desert microbial community structures, but these effects were attenuated by the effects related to the long-term adaptation of both fungal and bacterial communities to soil origins (i.e. soil water regime histories). The intensity of the water pulses (i.e. the amount of water added) rather than the frequency of wetting events had greatest effect in shaping bacterial and fungal community structures. In contrast to microbial diversity, microbial activities (enzyme activities) showed very little response to the wetting events and were mainly driven by soil origin. This experiment clearly demonstrates the complexity of microbial community responses to wetting events in hyperarid hot desert soil ecosystems and underlines the dynamism of their indigenous microbial communities.

  1. Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering

    Science.gov (United States)

    Toor, Fatima; Miller, Jeffrey B.; Davidson, Lauren M.; Nichols, Logan; Duan, Wenqi; Jura, Michael P.; Yim, Joanne; Forziati, Joanne; Black, Marcie R.

    2016-10-01

    There are a range of different methods to generate a nanostructured surface on silicon (Si) but the most cost effective and optically interesting is the metal assisted wet chemical etching (MACE) (Koynov et al 2006 Appl. Phys. Lett. 88 203107). MACE of Si is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features or ‘black silicon’. MACE-fabricated nanowires (NWs) provide improved antireflection and light trapping functionality (Toor et al 2016 Nanoscale 8 15448-66) compared with the traditional ‘iso-texturing’ (Campbell and Green 1987 J. Appl. Phys. 62 243-9). The resulting lower reflection and improved light trapping can lead to higher short circuit currents in NW solar cells (Toor et al 2011 Appl. Phys. Lett. 99 103501). In addition, NW cells can have higher fill factors and voltages than traditionally processed cells, thus leading to increased solar cell efficiencies (Cabrera et al 2013 IEEE J. Photovolt. 3 102-7). MACE NW processing also has synergy with next generation Si solar cell designs, such as thin epitaxial-Si and passivated emitter rear contact (Toor et al 2016 Nanoscale 8 15448-66). While several companies have begun manufacturing black Si, and many more are researching these techniques, much of the work has not been published in traditional journals and is publicly available only through conference proceedings and patent publications, which makes learning the field challenging. There have been three specialized review articles published recently on certain aspects of MACE or black Si, but do not present a full review that would benefit the industry (Liu et al 2014 Energy Environ. Sci. 7 3223-63 Yusufoglu et al 2015 IEEE J. Photovolt. 5 320-8 Huang et al 2011 Adv. Mater. 23 285-308). In this feature article, we review the chemistry of MACE and explore how changing parameters in the wet etch process effects the resulting

  2. Radiation resistance of track etched membranes

    International Nuclear Information System (INIS)

    Buczkowski, M.; Sartowska, B.; Wawszczak, D.; Starosta, W.

    2001-01-01

    Track etched membranes (TEMs) obtained by irradiation of polymer films with heavy ions and subsequent etching of latent tracks can be applied in many fields and among others in biomedicine as well. It is important to know radiation resistance of TEMs because of wide use of radiation sterilization in the case of biomedical devices. Tensile properties of TEMs made of PET and PC films with the thickness of 10 μm after electron irradiation at different doses are known from literature. Nowadays TEMs are being manufactured from thicker (20 μm) PET and PC films as well as polyethylene naphthalate (PEN) films are proposed for TEMs. It seems to be important to get data about radiation resistance of new kinds of TEMs. Samples of polymer films made of PET and PEN with the thickness of 19-25 μm and TEMs made of such materials have been irradiated using 10 MeV electron beam with doses up to 990 kGy. Tensile properties and SEM photographs of the samples after irradiation are given in the paper

  3. Designer-Wet Micromodels for Studying Potential Changes in Wettability during Microbial Enhanced Oil Recovery

    Science.gov (United States)

    Armstrong, R. T.; Wildenschild, D.

    2010-12-01

    Microbial Enhanced Oil Recovery (MEOR) is a process where microorganisms are used for tertiary recovery of oil. Some bacteria can facilitate the mobilization of oil through the production of amphiphilic compounds called biosurfactants that reduce the interfacial tension (IFT) between immiscible phases. Additionally, most bacteria have an inclination to colonize surfaces and form biofilm, which can change a reservoir's wetting properties or clog preferential flow paths. Herein, we aim to understand changes in wettability during MEOR under mixed wettability conditions within silicon etched micromodels and to identify the type of oil field (i.e. based on wettability) in which MEOR is likely to be most profitable. To quantify porous media wettability, macro-scale indexes (obtained with techniques such as the Carter or Amott methods) are used regularly. However, these measurements lack the capability for characterization of changes in wettability during MEOR treatment, and only provide macro-scale information. In an effort to understand micro-scale temporal and spatial changes in wettability we measure interfacial curvature from stereo microscope images using level set methods. Curvature, from the perspective of the oil phase, is positive for a concave interface (i.e. water-wet surface) and negative for a convex interface (i.e. oil-wet surface). Thus, shifts in the radius of curvature distribution (i.e. from positive to negative or conversely) are indicative of wettability changes. Both curvature distributions using level-set methods and the Carter method are used to characterize wettability before and after microbial treatment. In preliminary studies aimed at understanding wettability changes due to microbial surface interactions by Bacillus mojavensis JF-2, oil droplets were placed on glass slides suspended in growth media and the resulting contact angle was measured over time. Results showed that a water-wet surface will become more water wet as JF-2 accumulated in

  4. Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Takhar, Kuldeep; Meer, Mudassar; Upadhyay, Bhanu B.; Ganguly, Swaroop; Saha, Dipankar

    2017-05-01

    We have demonstrated that a thin layer of Al2O3 grown by wet-oxidation of wet-recessed AlGaN barrier layer in an AlGaN/GaN heterostructure can significantly improve the performance of GaN based high electron mobility transistors (HEMTs). The wet-etching leads to a damage free recession of the gate region and compensates for the decreased gate capacitance and increased gate leakage. The performance improvement is manifested as an increase in the saturation drain current, transconductance, and unity current gain frequency (fT). This is further augmented with a large decrease in the subthreshold current. The performance improvement is primarily ascribed to an increase in the effective velocity in two-dimensional electron gas without sacrificing gate capacitance, which make the wet-recessed gate oxide-HEMTs much more scalable in comparison to their conventional counterpart. The improved scalability leads to an increase in the product of unity current gain frequency and gate length (fT × Lg).

  5. Selective laser etching or ablation for fabrication of devices

    KAUST Repository

    Buttner, Ulrich; Salama, Khaled N.; Sapsanis, Christos

    2017-01-01

    Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can

  6. Particle precipitation in connection with KOH etching of silicon

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

    2004-01-01

    This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...... not removed, the iron oxide particles cause etch pits on the Si surface when later processed and exposed to phosphoric acid. It has been found that the particles can be removed in an HCl solution, but not completely in an H2SO4- H2O2 solution. The paper discusses the involved precipitation mechanism in terms...

  7. Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

    International Nuclear Information System (INIS)

    Cho, Chull Hee; Shin, Hong Shik; Chu, Chong Nam

    2014-01-01

    Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

  8. Longevity of Self-etch Dentin Bonding Adhesives Compared to Etch-and-rinse Dentin Bonding Adhesives: A Systematic Review.

    Science.gov (United States)

    Masarwa, Nader; Mohamed, Ahmed; Abou-Rabii, Iyad; Abu Zaghlan, Rawan; Steier, Liviu

    2016-06-01

    A systematic review and meta-analysis were performed to compare longevity of Self-Etch Dentin Bonding Adhesives to Etch-and-Rinse Dentin Bonding Adhesives. The following databases were searched for PubMed, MEDLINE, Web of Science, CINAHL, the Cochrane Library complemented by a manual search of the Journal of Adhesive Dentistry. The MESH keywords used were: "etch and rinse," "total etch," "self-etch," "dentin bonding agent," "bond durability," and "bond degradation." Included were in-vitro experimental studies performed on human dental tissues of sound tooth structure origin. The examined Self-Etch Bonds were of two subtypes; Two Steps and One Step Self-Etch Bonds, while Etch-and-Rinse Bonds were of two subtypes; Two Steps and Three Steps. The included studies measured micro tensile bond strength (μTBs) to evaluate bond strength and possible longevity of both types of dental adhesives at different times. The selected studies depended on water storage as the aging technique. Statistical analysis was performed for outcome measurements compared at 24 h, 3 months, 6 months and 12 months of water storage. After 24 hours (p-value = 0.051), 3 months (p-value = 0.756), 6 months (p-value=0.267), 12 months (p-value=0.785) of water storage self-etch adhesives showed lower μTBs when compared to the etch-and-rinse adhesives, but the comparisons were statistically insignificant. In this study, longevity of Dentin Bonds was related to the measured μTBs. Although Etch-and-Rinse bonds showed higher values at all times, the meta-analysis found no difference in longevity of the two types of bonds at the examined aging times. Copyright © 2016 Elsevier Inc. All rights reserved.

  9. Phoenix's Wet Chemistry Laboratory Units

    Science.gov (United States)

    2008-01-01

    This image shows four Wet Chemistry Laboratory units, part of the Microscopy, Electrochemistry, and Conductivity Analyzer (MECA) instrument on board NASA's Phoenix Mars Lander. This image was taken before Phoenix's launch on August 4, 2007. The Phoenix Mission is led by the University of Arizona, Tucson, on behalf of NASA. Project management of the mission is by NASA's Jet Propulsion Laboratory, Pasadena, Calif. Spacecraft development is by Lockheed Martin Space Systems, Denver.

  10. Etched ion track polymer membranes for sustained drug delivery

    International Nuclear Information System (INIS)

    Rao, Vijayalakshmi; Amar, J.V.; Avasthi, D.K.; Narayana Charyulu, R.

    2003-01-01

    The method of track etching has been successfully used for the production of polymer membranes with capillary pores. In the present paper, micropore membranes have been prepared by swift heavy ion irradiation of polycarbonate (PC). PC films were irradiated with ions of gold, silicon and oxygen of varying energies and fluence. The ion tracks thus obtained were etched chemically for various time intervals to get pores and these etched films were used as membranes for the drug release. Ciprofloxacine hydrochloride was used as model drug for the release studies. The drug content was estimated spectrophotometrically. Pore size and thus the drug release is dependent on the etching conditions, ions used, their energy and fluence. Sustained drug release has been observed in these membranes. The films can be selected for practical utilization by optimizing the irradiation and etching conditions. These films can be used as transdermal patches after medical treatment

  11. Features of copper etching in chlorine-argon plasma

    International Nuclear Information System (INIS)

    Efremov, A.M.; Svettsov, V.I.

    1995-01-01

    Chlorine mixtures with inert gases including argon exhibit promise as plasma feed gases for etching metals and semiconductors in the microelectronics industry. It was shown that even strong dilution of reactive gas with an inert gas (up to 80-90% of the latter) has virtually no effect in decreasing the rate of plasma etching of materials such as silicon and gallium arsenide, compared to etching in pure chlorine. The principal reactive species responsible for etching these substrates are chlorine atoms therefore, a possible explanation of the effect is an increase in the rate of bulk generation of chlorine atoms in the presence of argon. In this work the authors studied the influence of argon on the rate of copper etching in chlorine, because copper, unlike the above substrates, reacts effectively not only with the atoms but with the ground-state molecules of chlorine

  12. Future developments in etched track detectors for neutron dosimetry

    International Nuclear Information System (INIS)

    Tommasino, L.

    1987-01-01

    Many laboratories engaged in the field of personal neutron dosimetry are interested in developing better etching processes and improving the CR-39 detecting materials. To know how much effort must still be devoted to the development of etch track dosimetry, it is necessary to understand the advantages. limitations and degree of exploitation of the currently available techniques. So much has been learned about the chemical and electrochemical etching processes that an optimised combination of etching processes could make possible the elimination of many of the existing shortcomings. Limitations of etched track detectors for neutron dosimetry arise mainly because the registration occurs only on the detector surface. These damage type detectors are based on radiation induced chain scission processes in polymers, which result in hole-type tracks in solids. The converse approach, yet to be discovered, would be the development of cure-track detectors, where radiation induced cross linking between organic polymer chains could result in solid tracks in liquids. (author)

  13. Optimization of permanganic etching of polyethylenes for scanning electron microscopy

    International Nuclear Information System (INIS)

    Naylor, K.L.; Phillips, P.J.

    1983-01-01

    The permanganic etching technique has been studied as a function of time, temperature, and concentration for a series of polyethylenes. Kinetic studies show that a film of reaction products builds up on the surface, impeding further etching, an effect which is greatest for the lowest-crystallinity polymers. SEM studies combined with EDS show that the film contains sulfur, potassium and some manganese. An artifact is produced by the etching process which is impossible to remove by washing procedures if certain limits of time, temperature, and concentration are exceeded. For lower-crystallinity polyethylenes multiple etching and washing steps were required for optimal resolution. Plastic deformation during specimen preparation, whether from scratches or freeze fracturing, enhances artifact formation. When appropriate procedures are used, virtually artifact-free surfaces can be produced allowing a combination of permanganic etching and scanning electron microscopy to give a rapid method for detailed morphological characterization of bulk specimens

  14. Etch characteristics of BCB film using inductively coupled plasma

    International Nuclear Information System (INIS)

    Kang, Pil Seung; Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il; Kim, Sang Gi

    2003-01-01

    The etching characteristics and mechanism of BCB thin films were investigated as a function of CF 4 /O 2 mixing ratio in ICP system. Maximum etch rate of 830 nm/min is obtained at the mixture of O 2 /CF 4 (=80%/20%). OES actinometry results showed that volume density of oxygen atoms fallows the same extreme behavior with the BCB etch rate, while the density of fluorine atoms changes monotonously. Therefore chemical destruction of BCB by oxygen atoms was proposed as the dominant etch mechanism. XPS analysis showed that the addition of CF 4 to O 2 helps to volatilize silicon atoms containing in BCB but leads to the formation of F-containing polymer layer. The profile of etched BCB film was close to 90 .deg. and the surface was clean

  15. Effects of mask imperfections on InP etching profiles

    International Nuclear Information System (INIS)

    Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

    1990-01-01

    The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

  16. Optical-fiber strain sensors with asymmetric etched structures.

    Science.gov (United States)

    Vaziri, M; Chen, C L

    1993-11-01

    Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

  17. Photonic jet μ-etching: from static to dynamic process

    Science.gov (United States)

    Abdurrochman, A.; Lecler, S.; Zelgowski, J.; Mermet, F.; Fontaine, J.; Tumbelaka, B. Y.

    2017-05-01

    Photonic jet etching is a direct-laser etching method applying photonic jet phenomenon to concentrate the laser beam onto the proceeded material. We call photonic jet the phenomenon of the localized sub-wavelength propagative beam generated at the shadow-side surfaces of micro-scale dielectric cylinders or spheres, when they are illuminated by an electromagnetic plane-wave or laser beam. This concentration has made possible the laser to yield sub-μ etching marks, despite the laser was a near-infrared with nano-second pulses sources. We will present these achievements from the beginning when some spherical glasses were used for static etching to dynamic etching using an optical fiber with a semi-elliptical tip.

  18. Hydrogen-Etched TiO2−x as Efficient Support of Gold Catalysts for Water–Gas Shift Reaction

    Directory of Open Access Journals (Sweden)

    Li Song

    2018-01-01

    Full Text Available Hydrogen-etching technology was used to prepare TiO2−x nanoribbons with abundant stable surface oxygen vacancies. Compared with traditional Au-TiO2, gold supported on hydrogen-etched TiO2−x nanoribbons had been proven to be efficient and stable water–gas shift (WGS catalysts. The disorder layer and abundant stable surface oxygen vacancies of hydrogen-etched TiO2−x nanoribbons lead to higher microstrain and more metallic Au0 species, respectively, which all facilitate the improvement of WGS catalytic activities. Furthermore, we successfully correlated the WGS thermocatalytic activities with their optoelectronic properties, and then tried to understand WGS pathways from the view of electron flow process. Hereinto, the narrowed forbidden band gap leads to the decreased Ohmic barrier, which enhances the transmission efficiency of “hot-electron flow”. Meanwhile, the abundant surface oxygen vacancies are considered as electron traps, thus promoting the flow of “hot-electron” and reduction reaction of H2O. As a result, the WGS catalytic activity was enhanced. The concept involved hydrogen-etching technology leading to abundant surface oxygen vacancies can be attempted on other supported catalysts for WGS reaction or other thermocatalytic reactions.

  19. Erosion corrosion in wet steam

    International Nuclear Information System (INIS)

    Tavast, J.

    1988-03-01

    The effect of different remedies against erosion corrosion in wet steam has been studied in Barsebaeck 1. Accessible steam systems were inspected in 1984, 1985 and 1986. The effect of hydrogen peroxide injection of the transport of corrosion products in the condensate and feed water systems has also been followed through chemical analyses. The most important results of the project are: - Low alloy chromium steels with a chromium content of 1-2% have shown excellent resistance to erosion corrosion in wet steam. - A thermally sprayed coating has shown good resistance to erosion corrosion in wet steam. In a few areas with restricted accessibility minor attacks have been found. A thermally sprayed aluminium oxide coating has given poor results. - Large areas in the moisture separator/reheater and in steam extraction no. 3 have been passivated by injection of 20 ppb hydrogen peroxide to the high pressure steam. In other inspected systems no significant effect was found. Measurements of the wall thickness in steam extraction no. 3 showed a reduced rate of attack. - The injection of 20 ppb hydrogen peroxide has not resulted in any significant reduction of the iron level result is contrary to that of earlier tests. An increase to 40 ppb resulted in a slight decrease of the iron level. - None of the feared disadvantages with hydrogen peroxide injection has been observed. The chromium and cobalt levels did not increase during the injection. Neither did the lifetime of the precoat condensate filters decrease. (author)

  20. Wet water glass production plant

    Directory of Open Access Journals (Sweden)

    Stanković Mirjana S.

    2003-01-01

    Full Text Available The IGPC Engineering Department designed basic projects for a wet hydrate dissolution plant, using technology developed in the IGPC laboratories. Several projects were completed: technological, machine, electrical, automation. On the basis of these projects, a production plant of a capacity of 75,000 t/y was manufactured, at "Zeolite Mira", Mira (VE, Italy, in 1997. and 1998, increasing detergent zeolite production, from 50,000 to 100,000 t/y. Several goals were realized by designing a wet hydrate dissolution plant. The main goal was increasing the detergent zeolite production. The technological cycle of NaOH was closed, and no effluents emitted, and there is no pollution (except for the filter cake. The wet water glass production process is fully automatized, and the product has uniform quality. The production process can be controlled manually, which is necessary during start - up, and repairs. By installing additional process equipment (centrifugal pumps and heat exchangers technological bottlenecks were overcome, and by adjusting the operation of autoclaves, and water glass filters and also by optimizing the capacities of process equipment.

  1. Adult Bed-Wetting: A Concern?

    Science.gov (United States)

    Adult bed-wetting: A concern? My 24-year-old husband has started to wet the bed at ... of Privacy Practices Notice of Nondiscrimination Manage Cookies Advertising Mayo Clinic is a not-for-profit organization ...

  2. Effect of etching time and resin bond on the flexural strength of IPS e.max Press glass ceramic.

    Science.gov (United States)

    Xiaoping, Luo; Dongfeng, Ren; Silikas, Nick

    2014-12-01

    To evaluate the effect of hydrofluoric acid (HFA) etching time and resin cement bond on the flexural strength of IPS e.max(®) Press glass ceramic. Two hundred and ten bars, 25mm×3mm×2mm, were made from IPS e.max(®) Press ingots through lost-wax, hot-pressed ceramic fabrication technology and randomly divided into five groups with forty-two per group after polishing. The ceramic surfaces of different groups were etched by 9.5% hydrofluoric acid gel for 0, 20, 40, 60 and 120s respectively. Two specimens of each group were selected randomly to examine the surface roughness and 3-dimensional topography with atomic force microscope (AFM), and microstructure was analyzed by the field emission scanning electron microscope (FE-SEM). Then each group were subdivided into two subgroups (n=20). One subgroup of this material was selected to receive a thin (approximately 0.1mm) layer of resin luting agent (Variolink N) whereas the other subgroup remained unaltered. Half of subgroup's specimens were thermocycled 10,000 times before a 3-point bending test in order to determine the flexural strength. Interface between resin cement and ceramic was examined with field emission scanning electronic microscope. Roughness values increased with increasing etching time. The mean flexural strength values of group 0s, 20s, 40s, 60s and 120s were 384±33, 347±43, 330±53, 327±67 and 317±41MPa respectively. Increasing HF etching times reduced the mean flexural strength (pglass ceramic, but resin cement bonding to appropriately etched surface would strengthen the dental ceramic. Copyright © 2014 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  3. ICP dry etching ITO to improve the performance of GaN-based LEDs

    International Nuclear Information System (INIS)

    Meng Lili; Chen Yixin; Ma Li; Liu Zike; Shen Guangdi

    2011-01-01

    In order to improve the light efficiency of the conventional GaN-based light-emitting diodes (LEDs), the indium tin oxide (ITO) film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface. There is a big problem with the ITO thin film's corrosion during the electrode preparation. In this paper, at least, the edge of the ITO film was lateral corroded 3.5 μm width, i.e. 6.43%-1/3 of ITO film's area. An optimized simple process, i.e. inductively couple plasma (ICP), was introduced to solve this problem. The ICP process not only prevented the ITO film from lateral corrosion, but also improved the LED's light intensity and device performance. The edge of the ITO film by ICP dry etching is steep, and the areas of ITO film are whole. Compared with the chip by wet etching, the areas of light emission increase by 6.43% at least and the chip's lop values increase by 45.9% at most. (semiconductor devices)

  4. Hot Surface Ignition

    OpenAIRE

    Tursyn, Yerbatyr; Goyal, Vikrant; Benhidjeb-Carayon, Alicia; Simmons, Richard; Meyer, Scott; Gore, Jay P.

    2015-01-01

    Undesirable hot surface ignition of flammable liquids is one of the hazards in ground and air transportation vehicles, which primarily occurs in the engine compartment. In order to evaluate the safety and sustainability of candidate replacement fuels with respect to hot surface ignition, a baseline low lead fuel (Avgas 100 LL) and four experimental unleaded aviation fuels recommended for reciprocating aviation engines were considered. In addition, hot surface ignition properties of the gas tu...

  5. Effect of etching on bonding of a self-etch adhesive to dentine affected by amelogenesis imperfecta.

    Science.gov (United States)

    Epasinghe, Don Jeevanie; Yiu, Cynthia Kar Yung

    2018-02-01

    Dentine affected by amelogenesis imperfecta (AI) is histologically altered due to loss of hypoplastic enamel and becomes hypermineralized. In the present study, we examined the effect of additional acid etching on microtensile bond strength of a self-etch adhesive to AI-affected dentine. Flat coronal dentine obtained from extracted AI-affected and non-carious permanent molars were allocated to two groups: (a) Clearfil SE Bond (control); and (b) Clearfil SE Bond and additional etching with 34% phosphoric acid for 15 seconds. The bonded teeth were sectioned into .8-mm 2 beams for microtensile bond strength testing, and stressed to failure under tension. The bond strength data were analyzed using two-way analysis of variance (dentine type and etching step) and Student-Newman-Keuls multiple comparison test (P<.05). Representative fractured beams from each group were examined under scanning electron microscopy. Both factors, dentine substrate (P<.001) and etching step (P<.05), and their interactions (P<.001), were statistically significant. Additional etching had an adverse effect on the bond strength of Clearfil SE Bond to normal dentine (P<.005), and no significant improvement was found for AI-affected dentine (P=.479). Additional acid etching does not improve the bond strength of a self-etch adhesive to AI-affected dentine. © 2017 John Wiley & Sons Australia, Ltd.

  6. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    International Nuclear Information System (INIS)

    Ji, J; Tay, F E H; Miao Jianmin; Sun Jianbo

    2006-01-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions

  7. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Ji, J [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Tay, F E H [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Miao Jianmin [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore); Sun Jianbo [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore)

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  8. 49 CFR 173.159 - Batteries, wet.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 2 2010-10-01 2010-10-01 false Batteries, wet. 173.159 Section 173.159... Batteries, wet. (a) Electric storage batteries, containing electrolyte acid or alkaline corrosive battery fluid (wet batteries), may not be packed with other materials except as provided in paragraphs (g) and...

  9. European wet deposition maps based on measurements

    NARCIS (Netherlands)

    Leeuwen EP van; Erisman JW; Draaijers GPJ; Potma CJM; Pul WAJ van; LLO

    1995-01-01

    To date, wet deposition maps on a European scale have been based on long-range transport model results. For most components wet deposition maps based on measurements are only available on national scales. Wet deposition maps of acidifying components and base cations based on measurements are needed

  10. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Directory of Open Access Journals (Sweden)

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  11. Hot gas cleaning, a targeted project

    Energy Technology Data Exchange (ETDEWEB)

    Romey, I. [University of Essen, Essen (Germany)

    1998-11-01

    Advanced hot gas cleaning systems will play a key role in future integrated combined cycle technologies. IGCC demonstration plants in operation or under construction are at present equipped with conventional wet gas scrubbing and cleaning systems. Feasibility studies for those IGCC plants have shown that the total efficiency of the processes can be improved using hot gas cleaning systems. However, this technology has not been developed and tested at a technical scale. Six well-known European industrial companies and research centres jointly worked together since January 1996 on a Targeted Project `Hot Gas Cleaning` to investigate and develop new hot gas cleaning systems for advanced clean coal power generation processes. In addition project work on chemical analysis and modelling was carried out in universities in England and Germany. The latest main findings were presented at the workshop. The main project aims are summarised as follows: to increase efficiency of advanced power generation processes; to obtain a reduction of alkalis and environmental emissions e.g. SO{sub 2}, NO{sub x}, CO{sub 2} and dust; and to develop the design basis for future industrial plants based on long-term operation of laboratory, pilot and demo-plants. To cover a range of possible process routes for future hot gas cleaning systems the following research programme is under investigation: removal of trace elements by different commercial and self developed sorbents; gas separation by membranes; separation of gas turbine relevant pollutants by hot filter dust and; H{sub 2}S removal and gas dedusting at high temperatures. 13 figs.

  12. Semiconductor Deposition and Etching Interactions of Laser-Generated Translationally Hot Atoms and Radicals

    Science.gov (United States)

    1991-05-01

    fluorescence," J. Chem. Phys. 86, 6731 (1987). J. E. Smedley , H. K. Haugen and S. R. Leone, "Collision-induced dissociation of laser- excited Br 2 [B3Fl(Ou... Robert J. Levis, postdoc, presently Assistant Professor of Chemistry, Wayne State University. Lisa M. Cousins, graduate student, Ph.D. 1989, presently

  13. COMPOSITE RESIN BOND STRENGTH TO ETCHED DENTINWITH ONE SELF PRIMING ADHESIVE

    Directory of Open Access Journals (Sweden)

    P SAMIMI

    2002-09-01

    Full Text Available Introduction. The purpose of this study was to compare shear bond strength of composite resins to etched dentin in both dry and wet dentin surface with active and inactive application of a single-bottle adhesive resin (Single Bond, 3M Dental products. Methods. Fourthy four intact human extracted molars and premolars teeth were selected. The facial surfaces of the teeth were grounded with diamond bur to expose dentin. Then specimens were divided into four groups of 11 numbers (9 Molars and 2 Premolars. All the samples were etched with Phosphoric Acid Gel 35% and then rinsed for 10 seconds. The following stages were carried out for each group: Group I (Active-Dry: After rinsing, air drying of dentin surface for 15 seconds, active priming of adhesive resin for 15 seconds, air drying for 5 seconds, the adhesive resin layer was light cured for 10 seconds. Group III (Inactive-Dry:After rinsing, air drying of dentin surface for 15 seconds, adhesive resin was applied and air dryied for 5 seconds, the adhesive layer was light cured for 10 seconds. Group III (Active-Wet:After rinsing, removal of excess water of dentin surface with a cotton roll, active priming of adhesive resin for 15 seconds and air drying for 5 seconds, the adhesive layer was light cured for 10 seconds. Group IV (Inactive-Wet:After rinsing, removal of excess water of dentin surface with a cotton roll, the adhesive resin was applied and air dryied for 5 seconds and then cured for 10 seconds. After adhesive resin application, composite resin (Z250, 3M Dental products was applied on prepared surface with cylindrical molds (with internal diameter of 2.8mm, & height of 5mm and light-cured for 100 seconds (5x20s. The samples were then thermocycled. They were located in 6±3c water .temperature for 10 seconds and then 15 seconds in inviromental temperature, 10s in 55±3c water temperature and then were located at room temperature for 15s. This test was repeated for 100s. All of the specimens

  14. Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

    Science.gov (United States)

    Angermann, H.; Rappich, J.; Korte, L.; Sieber, I.; Conrad, E.; Schmidt, M.; Hübener, K.; Polte, J.; Hauschild, J.

    2008-04-01

    Special sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of differently oriented silicon to prepare very smooth silicon interfaces with excellent electronic properties on mono- and poly-crystalline substrates. Surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and scanning electron microscopy (SEM) investigations were utilised to develop wet-chemical smoothing procedures for atomically flat and structured surfaces, respectively. Hydrogen-termination as well as passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological processing. Compared to conventional pre-treatments, significantly lower micro-roughness and densities of surface states were achieved on mono-crystalline Si(100), on evenly distributed atomic steps, such as on vicinal Si(111), on silicon wafers with randomly distributed upside pyramids, and on poly-crystalline EFG ( Edge-defined Film-fed- Growth) silicon substrates. The recombination loss at a-Si:H/c-Si interfaces prepared on c-Si substrates with randomly distributed upside pyramids was markedly reduced by an optimised wet-chemical smoothing procedure, as determined by PL measurements. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H(n)/c-Si(p)/Al) with textured c-Si substrates the smoothening procedure results in a significant increase of short circuit current Isc, fill factor and efficiency η. The scatter in the cell parameters for measurements on different cells is much narrower, as compared to conventional pre-treatments, indicating more well-defined and reproducible surface conditions prior to a-Si:H emitter deposition and/or a higher stability of the c-Si surface against variations in the a-Si:H deposition conditions.

  15. Interrelated temperature dependence of bulk etch rate and track length saturation time in CR-39 detector

    International Nuclear Information System (INIS)

    Azooz, A.A.; Al-Jubbori, M.A.

    2013-01-01

    Highlights: • New empirical parameterization of CR-39 bulk etch rate. • Bulk etch rates measurements using two different methods give consistent results. • Temperature independence of track saturation length. • Two empirical relation between bulk etch rate and temperature are suggested. • Simple inverse relation between bulk etch rate and track saturation time. -- Abstract: Experimental measurements of the etching solution temperature dependence of bulk etch rate using two independent methods revealed a few interesting properties. It is found that while the track saturation length is independent of etching temperature, the etching time needed to reach saturation is strongly temperature-dependent. It is demonstrated that there is systematic simple inverse relation between track saturation time, and etching solution temperature. In addition, and although, the relation between the bulk etch rate and etching solution temperature can be reasonably described by a modified form of the Arrhenius equation, better fits can be obtained by another equation suggested in this work

  16. Cradle-to-gate life cycle assessment of the dry etching step in the manufacturing of photovoltaic cells

    Directory of Open Access Journals (Sweden)

    Otto Andersen

    2014-11-01

    Full Text Available A new photovoltaic silicon crystalline solar cell dry chemical etching process (DCEP is developed. It is an alternative to the current State-of-the-Art (SoA wet chemical etching process (WCEP, associated with relatively large environmental loadings in the form of high water consumption and emissions of greenhouse gases with high Global Warming Potential (GWP. In order to compare the environmental impacts of DCEP to the corresponding impacts from WCEP, a comparative attributional life cycle assessment (LCA is conducted. From the LCA it can be concluded that the DCEP will lead to 86% reduction in water consumption compared to WCEP (acidic, and 89% reduction compared to WCEP (alkaline. The emissions of greenhouse gases, as expressed by the GWP100 indicator of the etching step, are also reduced with 63% and 20% respectively, when compared with current SoA acidic and alkaline WCEP. The toxicity impacts are also assessed to be lower for the DCEP compared to WCEP technologies, although the uncertainty is relatively high for the applied toxicity indicators. All in all, DCEP can reduce the CO2eq emissions of solar photovoltaic systems production by 5-10%.

  17. Response of murine bone marrow-derived mesenchymal stromal cells to dry-etched porous silicon scaffolds.

    Science.gov (United States)

    Hajj-Hassan, Mohamad; Khayyat-Kholghi, Maedeh; Wang, Huifen; Chodavarapu, Vamsy; Henderson, Janet E

    2011-11-01

    Porous silicon shows great promise as a bio-interface material due to its large surface to volume ratio, its stability in aqueous solutions and to the ability to precisely regulate its pore characteristics. In the current study, porous silicon scaffolds were fabricated from single crystalline silicon wafers by a novel xenon difluoride dry etching technique. This simplified dry etch fabrication process allows selective formation of porous silicon using a standard photoresist as mask material and eliminates the post-formation drying step typically required for the wet etching techniques, thereby reducing the risk of damaging the newly formed porous silicon. The porous silicon scaffolds supported the growth of primary cultures of bone marrow derived mesenchymal stromal cells (MSC) plated at high density for up to 21 days in culture with no significant loss of viability, assessed using Alamar Blue. Scanning electron micrographs confirmed a dense lawn of cells at 9 days of culture and the presence of MSC within the pores of the porous silicon scaffolds. Copyright © 2011 Wiley Periodicals, Inc.

  18. Defect sensitive etching of hexagonal boron nitride single crystals

    Science.gov (United States)

    Edgar, J. H.; Liu, S.; Hoffman, T.; Zhang, Yichao; Twigg, M. E.; Bassim, Nabil D.; Liang, Shenglong; Khan, Neelam

    2017-12-01

    Defect sensitive etching (DSE) was developed to estimate the density of non-basal plane dislocations in hexagonal boron nitride (hBN) single crystals. The crystals employed in this study were precipitated by slowly cooling (2-4 °C/h) a nickel-chromium flux saturated with hBN from 1500 °C under 1 bar of flowing nitrogen. On the (0001) planes, hexagonal-shaped etch pits were formed by etching the crystals in a eutectic mixture of NaOH and KOH between 450 °C and 525 °C for 1-2 min. There were three types of pits: pointed bottom, flat bottom, and mixed shape pits. Cross-sectional transmission electron microscopy revealed that the pointed bottom etch pits examined were associated with threading dislocations. All of these dislocations had an a-type burgers vector (i.e., they were edge dislocations, since the line direction is perpendicular to the [ 2 11 ¯ 0 ]-type direction). The pit widths were much wider than the pit depths as measured by atomic force microscopy, indicating the lateral etch rate was much faster than the vertical etch rate. From an Arrhenius plot of the log of the etch rate versus the inverse temperature, the activation energy was approximately 60 kJ/mol. This work demonstrates that DSE is an effective method for locating threading dislocations in hBN and estimating their densities.

  19. Dry etching technologies for the advanced binary film

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  20. Feedback control of chlorine inductively coupled plasma etch processing

    International Nuclear Information System (INIS)

    Lin Chaung; Leou, K.-C.; Shiao, K.-M.

    2005-01-01

    Feedback control has been applied to poly-Si etch processing using a chlorine inductively coupled plasma. Since the positive ion flux and ion energy incident upon the wafer surface are the key factors that influence the etch rate, the ion current and the root mean square (rms) rf voltage on the wafer stage, which are measured using an impedance meter connected to the wafer stage, are adopted as the controlled variables to enhance etch rate. The actuators are two 13.56 MHz rf power generators, which adjust ion density and ion energy, respectively. The results of closed-loop control show that the advantages of feedback control can be achieved. For example, with feedback control, etch rate variation under the transient chamber wall condition is reduced roughly by a factor of 2 as compared to the open-loop case. In addition, the capability of the disturbance rejection was also investigated. For a gas pressure variation of 20%, the largest etch rate variation is about 2.4% with closed-loop control as compared with as large as about 6% variation using open-loop control. Also the effect of ion current and rms rf voltage on etch rate was studied using 2 2 factorial design whose results were used to derive a model equation. The obtained formula was used to adjust the set point of ion current and rf voltage so that the desired etch rate was obtained

  1. Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Miao-Rong [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); University of Chinese Academy of Sciences, 100049 Beijing (China); Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); Changchun University of Science and Technology, 130022 Changchun (China); Pan, Ge-Bo, E-mail: gbpan2008@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China)

    2017-07-15

    Graphical abstract: GaN surface was etched by 0.3 M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field. - Highlights: • GaN surface was etched by EDTA-2Na. • GaN may be dissolved into EDTA-2Na by forming Ga–EDTA complex. • We propose the complexation dissolution mechanism for the first time. - Abstract: Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 10{sup 9} per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga–EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.

  2. A Wet Chemistry Laboratory Cell

    Science.gov (United States)

    2008-01-01

    This picture of NASA's Phoenix Mars Lander's Wet Chemistry Laboratory (WCL) cell is labeled with components responsible for mixing Martian soil with water from Earth, adding chemicals and measuring the solution chemistry. WCL is part of the Microscopy, Electrochemistry, and Conductivity Analyzer (MECA) instrument suite on board the Phoenix lander. The Phoenix Mission is led by the University of Arizona, Tucson, on behalf of NASA. Project management of the mission is by NASA's Jet Propulsion Laboratory, Pasadena, Calif. Spacecraft development is by Lockheed Martin Space Systems, Denver.

  3. WET SOLIDS FLOW ENHANCEMENT; SEMIANNUAL

    International Nuclear Information System (INIS)

    Hugo S. Caram; Natalie Foster

    1997-01-01

    The objective was to visualize the flow of granular materials in flat bottomed silo. This was done by for dry materials introducing mustard seeds and poppy seeds as tracer particles and imaging them using Nuclear Magnetic Resonance. The region sampled was a cylinder 25 mm in diameter and 40 mm in length. Eight slices containing 128*128 to 256*256 pixels were generated for each image. The size of the silo was limited by the size of the high resolution NMR imager available. Cross-sections of 150mm flat bottomed silos, with the tracer layers immobilized by a gel, showed similar qualitative patterns for both dry and wet granular solids

  4. High-throughput anisotropic plasma etching of polyimide for MEMS

    International Nuclear Information System (INIS)

    Bliznetsov, Vladimir; Manickam, Anbumalar; Ranganathan, Nagarajan; Chen, Junwei

    2011-01-01

    This note describes a new high-throughput process of polyimide etching for the fabrication of MEMS devices with an organic sacrificial layer approach. Using dual frequency superimposed capacitively coupled plasma we achieved a vertical profile of polyimide with an etching rate as high as 3.5 µm min −1 . After the fabrication of vertical structures in a polyimide material, additional steps were performed to fabricate structural elements of MEMS by deposition of a SiO 2 layer and performing release etching of polyimide. (technical note)

  5. Spot formation of radiation particles by electrochemical etching

    International Nuclear Information System (INIS)

    Nozaki, Tetsuya

    1999-01-01

    An electrochemical etching (ECE) spot formation from the top of chemical etching (CE) spot was confirmed by a series of experiments. One of polycarbonate (Iupilon) could not make the spot, because ECE spot had grown up before the microscope confirming the CE spot. Clear CEC spots by α-ray and neutron were found on Harzlas and Baryotrak, both improvements of CR-39. Under the same etching conditions, the growth of ECE spot on Harzlas was more rapid than Baryotrak, but both spots were almost the same. All CE spot by α-ray produced the CEC spots, but a part of CE circle spot by neutron formed them. (S.Y.)

  6. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  7. Metal-assisted chemical etch porous silicon formation method

    Science.gov (United States)

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  8. Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

    Directory of Open Access Journals (Sweden)

    Ana Paula Morales Cobra Carvalho

    2009-06-01

    Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

  9. Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

    Science.gov (United States)

    Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

    2000-07-01

    In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

  10. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    Science.gov (United States)

    Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

    2012-01-01

    Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Rinse adhesive, AdheSE One (ADSE-1), a 1-step Self-Etch adhesive, and AdheSE (ADSE), a 2-step Self-Etch adhesive. Teeth were thermocycled and immersed in 50% silver nitrate solution. When both interfaces were considered, SBMP has exhibited significantly less microleakage than other adhesive systems (resp., for SB1, ADSE-1 and ADSE, P = 0.0007, P adhesives, microleakage was found greater at enamel than at dentin interfaces (for ADSE, P = 0.024 and for ADSE-1, P adhesive systems, there was no significant difference between enamel and dentin interfaces; (3) SBMP was found significantly better than other adhesives both at enamel and dentin interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1) and 2-step (ADSE) Self-Etch adhesives. PMID:22675358

  11. [Evaluation of shear bond strengths of self-etching and total-etching dental adhesives to enamel and dentin].

    Science.gov (United States)

    Yu, Ling; Liu, Jing-Ming; Wang, Xiao-Yan; Gao, Xue-Jun

    2009-03-01

    To evaluate the shear bond strengths of four dental adhesives in vitro. The facial surfaces of 20 human maxillary incisors were prepared to expose fresh enamel and randomly divided into four groups, in each group 5 teeth were bonded with one adhesives: group A (Clearfil Protect Bond, self-etching two steps), group B (Adper( Prompt, self-etching one step), group C (SwissTEC SL Bond, total-etching two steps), group D (Single Bond, total-etching two steps). Shear bond strengths were determined using an universal testing machine after being stored in distilled water for 24 h at 37 degrees C. The bond strengths to enamel and dentin were (25.33 +/- 2.84) and (26.07 +/- 5.56) MPa in group A, (17.08 +/- 5.13) and (17.93 +/- 4.70) MPa in group B, (33.14 +/- 6.05) and (41.92 +/- 6.25) MPa in group C, (22.51 +/- 6.25) and (21.45 +/- 7.34) MPa in group D. Group C showed the highest and group B the lowest shear bond strength to enamel and dentin among the four groups. The two-step self-etching adhesive showed comparable shear bond strength to some of the total-etching adhesives and higher shear bond strength than one-step self-etching adhesive.

  12. The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

    International Nuclear Information System (INIS)

    Mahmodi, H.; Hashim, M. R.

    2010-01-01

    In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.

  13. Effect of Dentin Wetness on the Bond Strength of Universal Adhesives

    Science.gov (United States)

    Lee, Ji-Hye; Son, Sung-Ae; Jung, Kyoung-Hwa; Kwon, Yong Hoon

    2017-01-01

    The effects of dentin wetness on the bond strength and adhesive interface morphology of universal adhesives have been investigated using micro-tensile bond strength (μTBS) testing and confocal laser scanning microscopy (CLSM). Seventy-two human third molars were wet ground to expose flat dentin surfaces. They were divided into three groups according to the air-drying time of the dentin surfaces: 0 (without air drying), 5, and 10 s. The dentin surfaces were then treated with three universal adhesives: G-Premio Bond, Single Bond Universal, and All-Bond Universal in self-etch or etch-and-rinse mode. After composite build up, a μTBS test was performed. One additional tooth was prepared for each group by staining the adhesives with 0.01 wt % of Rhodamine B fluorescent dye for CLSM analysis. The data were analyzed statistically using ANOVA and Tukey’s post hoc tests (α = 0.05). Two-way ANOVA showed significant differences among the adhesive systems and dentin moisture conditions. An interaction effect was also observed (p adhesives. PMID:29068404

  14. Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

    International Nuclear Information System (INIS)

    Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

    1999-01-01

    The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

  15. Bond efficacy and interface morphology of self-etching adhesives to ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

    2010-01-01

    Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray)

  16. Electronegativity-dependent tin etching from thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de; Lee, C. J.; Bijkerk, F. [Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, Enschede (Netherlands)

    2016-07-15

    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

  17. Etching properties of BLT films in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il

    2003-01-01

    CF 4 /Ar plasma mass content and etching rate behavior of BLT thin films were investigated in inductively coupled plasma (ICP) reactor as functions of CF 4 /Ar gas mixing ratio, rf power, and dc bias voltage. The variation of relative volume densities for F and Ar atoms were measured by the optical emission spectroscopy (OES). The etching rate as functions of Ar content showed the maximum of 803 A/min at 80 % Ar addition into CF 4 plasma. The presence of maximum etch rate may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The role of Ar ion bombardment includes destruction of metal (Bi, La, Ti)-O bonds as well as support of chemical reaction of metals with fluorine atoms

  18. What's new in dentine bonding? Self-etch adhesives.

    Science.gov (United States)

    Burke, F J Trevor

    2004-12-01

    Bonding to dentine is an integral part of contemporary restorative dentistry, but early systems were not user-friendly. The introduction of new systems which have a reduced number of steps--the self-etch adhesives--could therefore be an advantage to clinicians, provided that they are as effective as previous adhesives. These new self-etch materials appear to form hybrid layers as did the previous generation of materials. However, there is a need for further clinical research on these new materials. Advantages of self-etch systems include, no need to etch and rinse, reduced post-operative sensitivity and low technique sensitivity. Disadvantages include, the inhibition of set of self- or dual-cure resin materials and the need to roughen untreated enamel surfaces prior to bonding.

  19. In situ ion etching in a scanning electron microscope

    International Nuclear Information System (INIS)

    Dhariwal, R.S.; Fitch, R.K.

    1977-01-01

    A facility for ion etching in a scanning electron microscope is described which incorporates a new type of electrostatic ion source and viewing of the specimen is possible within about 30 sec after terminating the ion bombardment. Artefacts produced during etching have been studied and cone formation has been followed during its growth. The instrument has provided useful structural information on metals, alloys, and sinters. However, although insulating materials, such as plastics, glass and resins, have been successfully etched, interpretation of the resultant micrographs is more difficult. Ion etching of soft biological tissues, such as the rat duodenum was found to be of considerable interest. The observed structural features arise from the selective intake of the heavy fixation elements by different parts of the tissue. Hard biological materials, such as dental tissues and restorative materials, have also been studied and the prismatic structure of the enamel and the form and distribution of the dentinal tubules have been revealed. (author)

  20. Impact of electron irradiation on particle track etching response in ...

    Indian Academy of Sciences (India)

    energy by an ionizing particle traversing a material medium. When the ... Their amorphous nature and radiation sensitivity further ... The samples were washed thoroughly in lukewarm soap solution to avoid non-uniformity in etching due to ...

  1. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  2. Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

    International Nuclear Information System (INIS)

    Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

    2005-01-01

    Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

  3. Erbium doped stain etched porous silicon

    International Nuclear Information System (INIS)

    Gonzalez-Diaz, B.; Diaz-Herrera, B.; Guerrero-Lemus, R.; Mendez-Ramos, J.; Rodriguez, V.D.; Hernandez-Rodriguez, C.; Martinez-Duart, J.M.

    2008-01-01

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO 3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er 3+ ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy

  4. Organization of silicon nanocrystals by localized electrochemical etching

    International Nuclear Information System (INIS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-01-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  5. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  6. Note: Electrochemical etching of cylindrical nanoprobes using a vibrating electrolyte

    International Nuclear Information System (INIS)

    Wang, Yufeng; Zeng, Yongbin; Qu, Ningsong; Zhu, Di

    2015-01-01

    An electrochemical etching process using a vibrating electrolyte of potassium hydroxide to prepare tungsten cylindrical nanotips is developed. The vibrating electrolyte eases the effects of a diffusion layer and extends the etching area, which aid in the production of cylindrical nanotips. Larger amplitudes and a vibration frequency of 35 Hz are recommended for producing cylindrical nanotips. Nanotips with a tip radius of approximately 43 nm and a conical angle of arctan 0.0216 are obtained

  7. Energy dependence of fast neutron dosimetry using electrochemical etching

    International Nuclear Information System (INIS)

    Su, S.J.; Morgan, K.Z.

    1978-01-01

    Registration of fast-neutron induced recoil tracks by the electrochemical etching technique as applied to sensitive Lexan polycarbonate foils provides a simple and inexpensive means of fast neutron personnel dosimetry. The sensitivity (tracks/neutron) of recoil particle registration is given as a function of neutron energy. Neutrons of 7 Li (p,n) 7 Be, 3 T (d,n) 4 He and 9 B, respectively. Results are compared with other studies using other neutron sources and conventional etching method

  8. Microdroplet-etched highly birefringent low-loss fiber tapers.

    Science.gov (United States)

    Mikkelsen, Jared C; Poon, Joyce K S

    2012-07-01

    We use hydrofluoric acid microdroplets to directly etch highly birefringent biconical fiber tapers from standard single-mode fibers. The fiber tapers have micrometer-sized cross sections, which are controlled by the etching condition. The characteristic teardrop cross section leads to a high group birefringence of B(G)≈0.017 and insertion losses <0.7 dB over waist lengths of about 2.1 mm.

  9. Plasma Etching of Tapered Features in Silicon for MEMS and Wafer Level Packaging Applications

    International Nuclear Information System (INIS)

    Ngo, H-D; Hiess, Andre; Seidemann, Volker; Studzinski, Daniel; Lange, Martin; Leib, Juergen; Shariff, Dzafir; Ashraf, Huma; Steel, Mike; Atabo, Lilian; Reast, Jon

    2006-01-01

    This paper is a brief report of plasma etching as applied to pattern transfer in silicon. It will focus more on concept overview and strategies for etching of tapered features of interest for MEMS and Wafer Level Packaging (WLP). The basis of plasma etching, the dry etching technique, is explained and plasma configurations are described elsewhere. An important feature of plasma etching is the possibility to achieve etch anisotropy. The plasma etch process is extremely sensitive to many variables such as mask material, mask openings and more important the plasma parameters

  10. High rate dry etching of InGaZnO by BCl3/O2 plasma

    Science.gov (United States)

    Park, Wanjae; Whang, Ki-Woong; Gwang Yoon, Young; Hwan Kim, Jeong; Rha, Sang-Ho; Seong Hwang, Cheol

    2011-08-01

    This paper reports the results of the high-rate dry etching of indium gallium zinc oxide (IGZO) at room temperature using BCl3/O2 plasma. We achieved an etch rate of 250 nm/min. We inferred from the x-ray photoelectron spectroscopy analysis that BOx or BOClx radicals generated from BCl3/O2 plasma cause the etching of the IGZO material. O2 initiates the etching of IGZO, and Ar removes nonvolatile byproducts from the surface during the etching process. Consequently, a smooth etched surface results when these gases are added to the etch gas.

  11. Comparison of enamel bond fatigue durability between universal adhesives and two-step self-etch adhesives: Effect of phosphoric acid pre-etching.

    Science.gov (United States)

    Suda, Shunichi; Tsujimoto, Akimasa; Barkmeier, Wayne W; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

    2018-03-30

    The effect of phosphoric acid pre-etching on enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives was investigated. Four universal adhesives and three two-step self-etch adhesives were used. The initial shear bond strengths and shear fatigue strengths to enamel with and without phosphoric acid pre-etching using the adhesives were determined. SEM observations were also conducted. Phosphoric acid pre-etching of enamel was found to increase the bond fatigue durability of universal adhesives, but its effect on two-step self-etch adhesives was material-dependent. In addition, some universal adhesives with phosphoric acid pre-etching showed similar bond fatigue durability to the two-step self-etch adhesives, although the bond fatigue durability of universal adhesives in self-etch mode was lower than that of the two-step self-etch adhesives. Phosphoric acid pre-etching enhances enamel bond fatigue durability of universal adhesives, but the effect of phosphoric acid pre-etching on the bond fatigue durability of two-step self-etch adhesives was material-dependent.

  12. Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

    Science.gov (United States)

    Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

    1975-01-01

    Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

  13. Wetting and evaporation of binary mixture drops.

    Science.gov (United States)

    Sefiane, Khellil; David, Samuel; Shanahan, Martin E R

    2008-09-11

    Experimental results on the wetting behavior of water, methanol, and binary mixture sessile drops on a smooth, polymer-coated substrate are reported. The wetting behavior of evaporating water/methanol drops was also studied in a water-saturated environment. Drop parameters (contact angle, shape, and volume) were monitored in time. The effects of the initial relative concentrations on subsequent evaporation and wetting dynamics were investigated. Physical mechanisms responsible for the various types of wetting behavior during different stages are proposed and discussed. Competition between evaporation and hydrodynamic flow are evoked. Using an environment saturated with water vapor allowed further exploration of the controlling mechanisms and underlying processes. Wetting stages attributed to differential evaporation of methanol were identified. Methanol, the more volatile component, evaporates predominantly in the initial stage. The data, however, suggest that a small proportion of methanol remained in the drop after the first stage of evaporation. This residual methanol within the drop seems to influence subsequent wetting behavior strongly.

  14. Bond strength with various etching times on young permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  15. Acid-catalyzed kinetics of indium tin oxide etching

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

    2014-08-28

    We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

  16. Thermal etching of silver: Influence of rolling defects

    Energy Technology Data Exchange (ETDEWEB)

    Ollivier, M., E-mail: o.maelig@imperial.ac.uk [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom); Harker, R.M. [AWE Aldermaston, Aldermaston, Reading RG7 4PR (United Kingdom); Chater, R.J.; Gourlay, C.M. [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom)

    2016-08-15

    Silver is well known to be thermally etched in an oxygen-rich atmosphere and has been extensively studied in the laboratory to understand thermal etching and to limit its effect when this material is used as a catalyst. Yet, in many industrial applications the surface of rolled silver sheets is used without particular surface preparation. Here, it is shown by combining FIB-tomography, FIB-SIMS and analytical SEM that the kinetics of thermal etch pitting are significantly faster on rolled Ag surfaces than on polished surfaces. This occurs due to range of interacting phenomena including (i) the reaction of subsurface carbon-contamination with dissolved oxygen to form pores that grow to intersect the surface, (ii) surface reconstruction around corrosion pits and surface scratches, and (iii) sublimation at low pressure and high temperature. A method to identify subsurface pores is developed to show that the pores have (111) and (100) internal facets and may be filled with a gas coming from the chemical reaction of oxygen and carbon contamination. - Highlights: Thermal etching of industrial silver sheets vs. polished silver sheets Effect of annealing atmosphere on the thermal etching of silver: surface and subsurface characterization Link between etch pitting and defects induced by rolling. FIB-tomography coupled with EBSD for determining crystal planes of the facets of subsurface pores. FIB-SIMS characterization to probe the gas confined inside subsurface pores.

  17. Dry etch challenges for CD shrinkage in memory process

    Science.gov (United States)

    Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

    2015-03-01

    Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

  18. Plasma etching of polymers like SU8 and BCB

    Science.gov (United States)

    Mischke, Helge; Gruetzner, Gabi; Shaw, Mark

    2003-01-01

    Polymers with high viscosity, like SU8 and BCB, play a dominant role in MEMS application. Their behavior in a well defined etching plasma environment in a RIE mode was investigated. The 40.68 MHz driven bottom electrode generates higher etch rates combined with much lower bias voltages by a factor of ten or a higher efficiency of the plasma with lower damaging of the probe material. The goal was to obtain a well-defined process for the removal and structuring of SU8 and BCB using fluorine/oxygen chemistry, defined using variables like electron density and collision rate. The plasma parameters are measured and varied using a production proven technology called SEERS (Self Excited Electron Resonance Spectroscopy). Depending on application and on Polymer several metals are possible (e.g., gold, aluminum). The characteristic of SU8 and BCB was examined in the case of patterning by dry etching in a CF4/O2 chemistry. Etch profile and etch rate correlate surprisingly well with plasma parameters like electron density and electron collision rate, thus allowing to define to adjust etch structure in situ with the help of plasma parameters.

  19. Wetting of flat gradient surfaces.

    Science.gov (United States)

    Bormashenko, Edward

    2018-04-01

    Gradient, chemically modified, flat surfaces enable directed transport of droplets. Calculation of apparent contact angles inherent for gradient surfaces is challenging even for atomically flat ones. Wetting of gradient, flat solid surfaces is treated within the variational approach, under which the contact line is free to move along the substrate. Transversality conditions of the variational problem give rise to the generalized Young equation valid for gradient solid surfaces. The apparent (equilibrium) contact angle of a droplet, placed on a gradient surface depends on the radius of the contact line and the values of derivatives of interfacial tensions. The linear approximation of the problem is considered. It is demonstrated that the contact angle hysteresis is inevitable on gradient surfaces. Electrowetting of gradient surfaces is discussed. Copyright © 2018 Elsevier Inc. All rights reserved.

  20. Wet motor geroter fuel pump

    Energy Technology Data Exchange (ETDEWEB)

    Wiernicki, M.V.

    1987-05-05

    This patent describes a wet motor gerotor fuel pump for pumping fuel from a fuel source to an internal combustion which consists of: gerotor pump means comprising an inner pump gear, an outer pump gear, and second tang means located on one of the inner and outer pump gears. The second tang means further extends in a second radial direction radially offset from the first radial direction and forms a driving connection with the first tang means such that the fuel pump pumps fuel from the fuel source into the narrow conduit inlet chamber, through the gerotor pump means past the electric motor means into the outlet housing means substantially along the flow axis to the internal combustion engine.

  1. Mechanisms of wet oxidation by hydrogen peroxide

    International Nuclear Information System (INIS)

    Baxter, R.A.

    1987-08-01

    A research programme is currently under way at BNL and MEL to investigate the possible use of Hydrogen Peroxide with metal ion catalysts as a wet oxidation treatment system for CEGB organic radioactive wastes. The published literature relating to the kinetics and mechanism of oxidation and decomposition reactions of hydrogen peroxide is reviewed and the links with practical waste management by wet oxidation are examined. Alternative wet oxidation systems are described and the similarities to the CEGB research effort are noted. (author)

  2. Hot Weather Tips

    Science.gov (United States)

    ... the person plenty of water and fruit or vegetable juice even if they say they’re not thirsty. No alcohol, coffee or tea. Seek medical help if you suspect dehydration. Light meals: Avoid hot, heavy meals and don’ ...

  3. China's 'Hot Money' Problems

    National Research Council Canada - National Science Library

    Martin, Michael F; Morrison, Wayne M

    2008-01-01

    .... The recent large inflow of financial capital into China, commonly referred to as "hot money," has led some economists to warn that such flows may have a destabilizing effect on China's economy...

  4. Wetting, superhydrophobicity, and icephobicity in biomimetic composite materials

    Science.gov (United States)

    Hejazi, Vahid

    data are collected in terms of oleophobicity especially when underwater applications are of interest. We develop models for four-phase rough interface of underwater oleophobicity and develop a novel approach to predict the CA of organic liquid on the rough surfaces immersed in water. We investigate wetting transition on a patterned surface in underwater systems, using a phase field model. We demonstrated that roughening on an immersed solid surface can drive the transition from Wenzel to Cassie-Baxter state. This discovery improves our understanding of underwater systems and their surface interactions during the wetting phenomenon and can be applied for the development of underwater oil-repellent materials which are of interest for various applications in the water industry, and marine devices. In chapter five, we experimentally and theoretically investigate the icephobicity of composite materials. A novel comprehensive definition of icephobicity, broad enough to cover a variety of situations including low adhesion strength, delayed ice crystallization, and bouncing is determined. Wetting behavior and ice adhesion properties of various samples are theoretically and experimentally compared. We conclude superhydrophobic surfaces are not necessarily icephobic. The models are tested against the experimental data to verify the good agreement between them. The models can be used for the design of novel superhydrophobic, oleophobic, omniphobic and icephobic composite materials. Finally we conclude that creating surface micro/nanostructures using mechanical abrasion or chemical etching as well as applying low energy materials are the most simple, inexpensive, and durable techniques to create superhydrophobic, oleophobic, and icephobic materials.

  5. Carbon nanotube fiber spun from wetted ribbon

    Science.gov (United States)

    Zhu, Yuntian T; Arendt, Paul; Zhang, Xiefei; Li, Qingwen; Fu, Lei; Zheng, Lianxi

    2014-04-29

    A fiber of carbon nanotubes was prepared by a wet-spinning method involving drawing carbon nanotubes away from a substantially aligned, supported array of carbon nanotubes to form a ribbon, wetting the ribbon with a liquid, and spinning a fiber from the wetted ribbon. The liquid can be a polymer solution and after forming the fiber, the polymer can be cured. The resulting fiber has a higher tensile strength and higher conductivity compared to dry-spun fibers and to wet-spun fibers prepared by other methods.

  6. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    OpenAIRE

    Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

    2012-01-01

    Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Ri...

  7. Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors

    Science.gov (United States)

    Sohrabi, Mehdi

    2017-11-01

    A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

  8. Wettability between TiN,TiC Containing Carbon Composite Refractory and Molten Slag or Hot Metal

    Institute of Scientific and Technical Information of China (English)

    SHIYue-xun; LIYingand; 等

    1994-01-01

    In order to develop a new-type TiC-TiN containing carbon composite refractory so as to improve the service life of blast furnace hearth,the wettability between the carbon refractory and molten slag or metal has been mea-sured.It was indicated that the carbon refractory is wet-ted by slag(θ≤90°) when(TiC+TiN)>33.52%,The effects of TiN or TiC on wetting behavior are basi-cally identical.When the amount of TiC in the carbon com-posite refractory is greater than 60% it will be wetted by hot metal;therefore,the carbon composite refractory will be wetted by slag but not permeated by hot metal when the amount of TiC is restricted.

  9. Temperature increase beneath etched dentin discs during composite polymerization.

    Science.gov (United States)

    Karaarslan, Emine Sirin; Secilmis, Asli; Bulbul, Mehmet; Yildirim, Cihan; Usumez, Aslihan

    2011-01-01

    The purpose of this in vitro study was to measure the temperature increase during the polymerization of a composite resin beneath acid-etched or laser-etched dentin discs. The irradiation of dentin with an Er:YAG laser may have a positive effect on the thermal conductivity of dentin. This technique has not been studied extensively. Forty dentin discs (5 mm in diameter and 0.5 or 1 mm in height) were prepared from extracted permanent third molars. These dentin discs were etched with 20% orthophosphoric acid or an Er:YAG laser, and were then placed on an apparatus developed to measure temperature increases. The composite resin was polymerized with a high-intensity quartz tungsten halogen (HQTH) or light-emitting diode unit (LED). The temperature increase was measured under the dentin disc with a J-type thermocouple wire that was connected to a data logger. Five measurements were made for each dentin disc, curing unit, and etching system combination. Differences between the initial and the highest temperature readings were taken, and the five calculated temperature changes were averaged to determine the value of the temperature increase. Statistical analysis was performed with a three-way ANOVA and Tukey HSD tests at a 0.05 level of significance. Further SEM examinations were performed. The temperature increase values varied significantly, depending on etching systems (p < 0.05), dentin thicknesses (p < 0.05), and curing units (p < 0.05). Temperature increases measured beneath laser-etched discs were significantly higher than those for acid-etched dentin discs (p < 0.05). The HQTH unit induced significantly higher temperature increases than the LED unit (p < 0.05). The LED unit induced the lowest temperature change (5.2°C) in the 1-mm, acid-etched dentin group. The HQTH unit induced the highest temperature change (10.4°C) for the 0.5-mm, laser-etched dentin group. The risk of heat-induced pulpal damage should be taken into consideration

  10. Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

    2008-10-01

    Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

  11. Enamel Wetness Effects on Microshear Bond Strength of Different Bonding Agents (Adhesive Systems): An in vitro Comparative Evaluation Study.

    Science.gov (United States)

    Kulkarni, Girish; Mishra, Vinay K

    2016-05-01

    The purpose of this study was to compare the effect of enamel wetness on microshear bond strength using different adhesive systems. To evaluate microshear bond strength of three bonding agents on dry enamel; to evaluate microshear bond strength of three bonding agents on wet enamel; and to compare microshear bond strength of three different bonding agents on dry and wet enamel. Sixty extracted noncarious human premolars were selected for this study. Flat enamel surfaces of approximately 3 mm were obtained by grinding the buccal surfaces of premolars with water-cooled diamond disks. This study evaluated one etch-and-rinse adhesive system (Single Bond 2) and two self-etching adhesive systems (Clearfil SE Bond and Xeno-V). The specimens were divided into two groups (n = 30). Group I (dry) was air-dried for 30 seconds and in group II (wet) surfaces were blotted with absorbent paper to remove excess water. These groups were further divided into six subgroups (n = 10) according to the adhesives used. The resin composite, Filtek Z 250, was bonded to flat enamel surfaces that had been treated with one of the adhesives, following the manufacturer's instructions. After being stored in water at 37°C for 24 hours, bonded specimens were stressed in universal testing machine (Fig. 3) at a crosshead speed of 1 mm/min. The data were evaluated with one-way and two-way analysis of variance (ANOVA), t-test, and Tukey's Multiple Post hoc tests (a = 0.05). The two-way ANOVA and Tukey's Multiple Post hoc tests showed significant differences among adhesive systems, but wetness did not influence microshear bond strength (p = 0.1762). The one-way ANOVA and t-test showed that the all-in-one adhesive (Xeno-V) was the only material influenced by the presence of water on the enamel surface. Xeno-V showed significantly higher microshear bond strength when the enamel was kept wet. Single Bond 2 adhesive showed significantly higher microshear bond strength as compared with Xeno-V adhesive but no

  12. Forced draft wet cooling systems

    International Nuclear Information System (INIS)

    Daubert, A.; Caudron, L.; Viollet, P.L.

    1975-01-01

    The disposal of the heat released from a 1000MW power plant needs a natural draft tower of about 130m of diameter at the base, and 170m height, or a cooling system with a draft forced by about forty vans, a hundred meters in diameter, and thirty meters height. The plumes from atmospheric cooling systems form, in terms of fluid mechanics, hot jets in a cross current. They consist in complex flows that must be finely investigated with experimental and computer means. The study, currently being performed at the National Hydraulics Laboratory, shows that as far as the length and height of visible plumes are concerned, the comparison is favorable to some types of forced draft cooling system, for low and medium velocities, (below 5 or 6m/s at 10m height. Beyond these velocities, the forced draft sends the plume up to smaller heights, but the plume is generally more dilute [fr

  13. Variability of extreme wet events over Malawi

    Directory of Open Access Journals (Sweden)

    Libanda Brigadier

    2017-01-01

    Full Text Available Adverse effects of extreme wet events are well documented by several studies around the world. These effects are exacerbated in developing countries like Malawi that have insufficient risk reduction strategies and capacity to cope with extreme wet weather. Ardent monitoring of the variability of extreme wet events over Malawi is therefore imperative. The use of the Expert Team on Climate Change Detection and Indices (ETCCDI has been recommended by many studies as an effective way of quantifying extreme wet events. In this study, ETCCDI indices were used to examine the number of heavy, very heavy, and extremely heavy rainfall days; daily and five-day maximum rainfall; very wet and extremely wet days; annual wet days and simple daily intensity. The Standard Normal Homogeneity Test (SNHT was employed at 5% significance level before any statistical test was done. Trend analysis was done using the nonparametric Mann-Kendall statistical test. All stations were found to be homogeneous apart from Mimosa. Trend results show high temporal and spatial variability with the only significant results being: increase in daily maximum rainfall (Rx1day over Karonga and Bvumbwe, increase in five-day maximum rainfall (Rx5day over Bvumbwe. Mzimba and Chileka recorded a significant decrease in very wet days (R95p while a significant increase was observed over Thyolo. Chileka was the only station which observed a significant trend (decrease in extremely wet rainfall (R99p. Mzimba was the only station that reported a significant trend (decrease in annual wet-day rainfall total (PRCPTOT and Thyolo was the only station that reported a significant trend (increase in simple daily intensity (SDII. Furthermore, the findings of this study revealed that, during wet years, Malawi is characterised by an anomalous convergence of strong south-easterly and north-easterly winds. This convergence is the main rain bringing mechanism to Malawi.

  14. Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors

    International Nuclear Information System (INIS)

    Ikegawa, Masato; Kobayashi, Jun'ichi; Fukuyama, Ryoji

    2001-01-01

    To achieve high etch rate, uniformity, good selectivity, and etch profile control across large diameter wafers, the distributions of ions, radicals, and etch products in magnetomicrowave high-etch-rate plasma etching reactors must be accurately controlled. In this work the effects of chamber heights, a focus ring around the wafer, and gas supply structures (or gas flow structures) on the radicals and etch products flux distribution onto the wafer were examined using the direct simulation Monte Carlo method and used to determine the optimal reactor geometry. The pressure uniformity on the wafer was less than ±1% when the chamber height was taller than 60 mm. The focus ring around the wafer produced uniform radical and etch-product fluxes but increased the etch-product flux on the wafer. A downward-flow gas-supply structure (type II) produced a more uniform radical distribution than that produced by a radial gas-supply structure (type I). The impact flow of the type II structure removed etch products from the wafer effectively and produced a uniform etch-product distribution even without the focus ring. Thus the downward-flow gas-supply structure (type II) was adopted in the design for the second-generation of a magnetomicrowave plasma etching reactor with a higher etching rate

  15. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    Science.gov (United States)

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  16. Pulsed high-density plasmas for advanced dry etching processes

    International Nuclear Information System (INIS)

    Banna, Samer; Agarwal, Ankur; Cunge, Gilles; Darnon, Maxime; Pargon, Erwine; Joubert, Olivier

    2012-01-01

    Plasma etching processes at the 22 nm technology node and below will have to satisfy multiple stringent scaling requirements of microelectronics fabrication. To satisfy these requirements simultaneously, significant improvements in controlling key plasma parameters are essential. Pulsed plasmas exhibit considerable potential to meet the majority of the scaling challenges, while leveraging the broad expertise developed over the years in conventional continuous wave plasma processing. Comprehending the underlying physics and etching mechanisms in pulsed plasma operation is, however, a complex undertaking; hence the full potential of this strategy has not yet been realized. In this review paper, we first address the general potential of pulsed plasmas for plasma etching processes followed by the dynamics of pulsed plasmas in conventional high-density plasma reactors. The authors reviewed more than 30 years of academic research on pulsed plasmas for microelectronics processing, primarily for silicon and conductor etch applications, highlighting the potential benefits to date and challenges in extending the technology for mass-production. Schemes such as source pulsing, bias pulsing, synchronous pulsing, and others in conventional high-density plasma reactors used in the semiconductor industry have demonstrated greater flexibility in controlling critical plasma parameters such as ion and radical densities, ion energies, and electron temperature. Specifically, plasma pulsing allows for independent control of ion flux and neutral radicals flux to the wafer, which is key to eliminating several feature profile distortions at the nanometer scale. However, such flexibility might also introduce some difficulty in developing new etching processes based on pulsed plasmas. Therefore, the main characteristics of continuous wave plasmas and different pulsing schemes are compared to provide guidelines for implementing different schemes in advanced plasma etching processes based on

  17. Surfactant-enhanced control of track-etch pore morphology

    International Nuclear Information System (INIS)

    Apel', P.Yu.; Blonskaya, I.V.; Didyk, A.Yu.; Dmitriev, S.N.; Orelovich, O.L.; Samojlova, L.I.; Vutsadakis, V.A.; Root, D.

    2000-01-01

    The influence of surfactants on the process of chemical development of ion tracks in polymers is studied. Based on the experimental data, a mechanism of the surfactant effect on the track-etch pore morphology is proposed. In the beginning of etching the surfactant is adsorbed on the surface and creates a layer that is quasi-solid and partially protects the surface from the etching agent. However, some etchant molecules diffuse through the barrier and react with the polymer surface. This results in the formation of a small hole at the entrance to the ion track. After the hole has attained a few annometers in diameter, the surfactant molecules penetrate into the track and cover its walls. Further diffusion of the surfactant into the growing pore is hindered. The adsorbed surfactant layer is not permeable for large molecules. In contrast, small alkali molecules and water molecules diffuse into the track and provide the etching process enlarging the pore. At this stage the transport of the surfactant into the pore channel can proceed only due to the lateral diffusion in the adsorbed layer. The volume inside the pore is free of surfactant molecules and grows at a higher rate than pore entrance. After a more prolonged etching the bottle-like (or 'cigar-like') pore channels are formed. The bottle-like shape of the pore channels depends on the etching conditions such as alkali and surfactant concentration, temperature, and type of the surfactant. The use of surfactants enables one to produce track-etch membranes with improved flow rate characteristics compared with those having cylindrical pores with the same nominal pore diameters

  18. Leaf Wetness within a Lily Canopy

    NARCIS (Netherlands)

    Jacobs, A.F.G.; Heusinkveld, B.G.; Klok, E.J.

    2005-01-01

    A wetness duration experiment was carried out within a lily field situated adjacent to coastal dunes in the Netherlands. A within-canopy model was applied to simulate leaf wetness in three layers, with equal leaf area indices, within the canopy. This simulation model is an extension of an existing

  19. Defined wetting properties of optical surfaces

    Science.gov (United States)

    Felde, Nadja; Coriand, Luisa; Schröder, Sven; Duparré, Angela; Tünnermann, Andreas

    2017-10-01

    Optical surfaces equipped with specific functional properties have attracted increasing importance over the last decades. In the light of cost reduction, hydrophobic self-cleaning behavior is aspired. On the other side, hydrophilic properties are interesting due to their anti-fog effect. It has become well known that such wetting states are significantly affected by the surface morphology. For optical surfaces, however, this fact poses a problem, as surface roughness can induce light scattering. The generation of optical surfaces with specific wetting properties, hence, requires a profound understanding of the relation between the wetting and the structural surface properties. Thus, our work concentrates on a reliable acquisition of roughness data over a wide spatial frequency range as well as on the comprehensive description of the wetting states, which is needed for the establishment of such correlations. We will present our advanced wetting analysis for nanorough optical surfaces, extended by a vibration-based procedure, which is mainly for understanding and tailoring the wetting behavior of various solid-liquid systems in research and industry. Utilizing the relationships between surface roughness and wetting, it will be demonstrated how different wetting states for hydrophobicity and hydrophilicity can be realized on optical surfaces with minimized scatter losses.

  20. Water wizards : reshaping wet nature and society

    NARCIS (Netherlands)

    Vleuten, van der E.B.A.; Disco, C.

    2004-01-01

    The article investigates how humans ‘networked’ wet nature and how this affected the shaping of Dutch society. First, it takes a grand view of Dutch history and describes how wet network building intertwined with the shaping of the Dutch landscape, its economy and its polity. Second, it investigates

  1. 7 CFR 29.2316 - Wet (W).

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Wet (W). 29.2316 Section 29.2316 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... INSPECTION Standards Official Standard Grades for Virginia Fire-Cured Tobacco (u.s. Type 21) § 29.2316 Wet (W...

  2. 7 CFR 29.2570 - Wet (W).

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Wet (W). 29.2570 Section 29.2570 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing...-Cured Tobacco (u.s. Types 22, 23, and Foreign Type 96) § 29.2570 Wet (W). Any sound tobacco containing...

  3. 7 CFR 29.3567 - Wet (W).

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Wet (W). 29.3567 Section 29.3567 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Type 95) § 29.3567 Wet (W). Any sound tobacco containing excessive moisture to the extent that it is in...

  4. 7 CFR 29.1083 - Wet (W).

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Wet (W). 29.1083 Section 29.1083 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Type 92) § 29.1083 Wet (W). Any sound tobacco containing excessive moisture to the extent that it is in...

  5. 7 CFR 29.3077 - Wet (W).

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Wet (W). 29.3077 Section 29.3077 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Wet (W). Any sound tobacco containing excessive moisture to the extent that it is in an unsafe or...

  6. Energy flux of hot atoms

    International Nuclear Information System (INIS)

    Wotzak, G.P.; Kostin, M.D.

    1976-01-01

    The process in which hot atoms collide with thermal atoms of a gas, transfer kinetic energy to them, and produce additional hot atoms is investigated. A stochastic method is used to obtain numerical results for the spatial and time dependent energy flux of hot atoms in a gas. The results indicate that in hot atom systems a front followed by an intense energy flux of hot atoms may develop

  7. Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits.

    Science.gov (United States)

    Grydlik, Martyna; Brehm, Moritz; Schäffler, Friedrich

    2012-10-30

    We demonstrate the formation of Ge quantum dots in ring-like arrangements around predefined {111}-faceted pits in the Si(001) substrate. We report on the complex morphological evolution of the single quantum dots contributing to the rings by means of atomic force microscopy and demonstrate that by careful adjustment of the epitaxial growth parameters, such rings containing densely squeezed islands can be grown with large spatial distances of up to 5 μm without additional nucleation of randomly distributed quantum dots between the rings.

  8. Wetting of the diamond surface

    International Nuclear Information System (INIS)

    Hansen, J.O.

    1987-01-01

    The surface conditions which lead to a wide variation in the wettability of diamond surfaces have been investigated using macroscopic surfaces to allow for the crystal anisotropy. A wetting balance method of calculating adhesion tension and hence contact angle has been used for diamonds having major faces near the [111] and [110] lattice planes. Three classes of behaviour have been identified. Surface analyses by Rutherford Backscattering of helium ions, X-ray Photoelectron Spectroscopy and Low Energy Electron Diffraction (LEED) have been used to define the role of the oxygen coverage of the surface in the transition I → O → H. Ferric ion has a hydrophilizing effect on the diamond surface, thought to be the consequence of attachment to the hydroxyl groups at the surface by a ligand mechanism. Other transition metal ions did not show this effect. The phenomenon of hydration of the surface, i.e. progressively more hydrophilic behaviour on prolonged exposure to liquid water, has been quantified. Imbibition or water penetration at microcracks are thought unlikely, and a water cluster build-up at hydrophilic sites is thought to be the best explanation. Dynamic studies indicate little dependence of the advancing contact angle on velocity for velocities up to 10 -4 m/s, and slight dependence of the receding contact angle. Hence advancing angles by this technique are similar to equilibrated contact angles found by optical techniques, but the receding angles are lower than found by other non-dynamic measurements

  9. Long term wet spent nuclear fuel storage

    International Nuclear Information System (INIS)

    1987-04-01

    The meeting showed that there is continuing confidence in the use of wet storage for spent nuclear fuel and that long-term wet storage of fuel clad in zirconium alloys can be readily achieved. The importance of maintaining good water chemistry has been identified. The long-term wet storage behaviour of sensitized stainless steel clad fuel involves, as yet, some uncertainties. However, great reliance will be placed on long-term wet storage of spent fuel into the future. The following topics were treated to some extent: Oxidation of the external surface of fuel clad, rod consolidation, radiation protection, optimum methods of treating spent fuel storage water, physical radiation effects, and the behaviour of spent fuel assemblies of long-term wet storage conditions. A number of papers on national experience are included

  10. The Effect of Phosphoric Acid Pre-etching Times on Bonding Performance and Surface Free Energy with Single-step Self-etch Adhesives.

    Science.gov (United States)

    Tsujimoto, A; Barkmeier, W W; Takamizawa, T; Latta, M A; Miyazaki, M

    2016-01-01

    The purpose of this study was to evaluate the effect of phosphoric acid pre-etching times on shear bond strength (SBS) and surface free energy (SFE) with single-step self-etch adhesives. The three single-step self-etch adhesives used were: 1) Scotchbond Universal Adhesive (3M ESPE), 2) Clearfil tri-S Bond (Kuraray Noritake Dental), and 3) G-Bond Plus (GC). Two no pre-etching groups, 1) untreated enamel and 2) enamel surfaces after ultrasonic cleaning with distilled water for 30 seconds to remove the smear layer, were prepared. There were four pre-etching groups: 1) enamel surfaces were pre-etched with phosphoric acid (Etchant, 3M ESPE) for 3 seconds, 2) enamel surfaces were pre-etched for 5 seconds, 3) enamel surfaces were pre-etched for 10 seconds, and 4) enamel surfaces were pre-etched for 15 seconds. Resin composite was bonded to the treated enamel surface to determine SBS. The SFEs of treated enamel surfaces were determined by measuring the contact angles of three test liquids. Scanning electron microscopy was used to examine the enamel surfaces and enamel-adhesive interface. The specimens with phosphoric acid pre-etching showed significantly higher SBS and SFEs than the specimens without phosphoric acid pre-etching regardless of the adhesive system used. SBS and SFEs did not increase for phosphoric acid pre-etching times over 3 seconds. There were no significant differences in SBS and SFEs between the specimens with and without a smear layer. The data suggest that phosphoric acid pre-etching of ground enamel improves the bonding performance of single-step self-etch adhesives, but these bonding properties do not increase for phosphoric acid pre-etching times over 3 seconds.

  11. ECE laboratory in the Vinca Institute - its basic characteristics and fundamentals of electrochemical etching on polycarbonate

    International Nuclear Information System (INIS)

    Zunic, Z.S.; Ujic, P.; Celikovic, I.; Fujimoto, K.

    2003-01-01

    This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINCA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up, i. e., bulk etching speeds of chemical etching and electrochemical etching in the VINCA Electrochemical Etching Laboratory itself. Beside this initial step, other concerns were taken into consideration in this preliminary experimental phase such as the following: the measurable energy range of the polycarbonate film, background etch pit density of the film and its standard deviation and reproducibility of the response to alpha particles for different sets of etchings. (author)

  12. HotRegion: a database of predicted hot spot clusters.

    Science.gov (United States)

    Cukuroglu, Engin; Gursoy, Attila; Keskin, Ozlem

    2012-01-01

    Hot spots are energetically important residues at protein interfaces and they are not randomly distributed across the interface but rather clustered. These clustered hot spots form hot regions. Hot regions are important for the stability of protein complexes, as well as providing specificity to binding sites. We propose a database called HotRegion, which provides the hot region information of the interfaces by using predicted hot spot residues, and structural properties of these interface residues such as pair potentials of interface residues, accessible surface area (ASA) and relative ASA values of interface residues of both monomer and complex forms of proteins. Also, the 3D visualization of the interface and interactions among hot spot residues are provided. HotRegion is accessible at http://prism.ccbb.ku.edu.tr/hotregion.

  13. Dust emission from wet, low-emission coke quenching process

    Science.gov (United States)

    Komosiński, Bogusław; Bobik, Bartłomiej; Konieczny, Tomasz; Cieślik, Ewelina

    2018-01-01

    Coke plants, which produce various types of coke (metallurgical, foundry or heating), at temperatures between 600 and 1200°C, with limited access to oxygen, are major emitters of particulates and gaseous pollutants to air, water and soils. Primarily, the process of wet quenching should be mentioned, as one of the most cumbersome. Atmospheric pollutants include particulates, tar substances, organic pollutants including B(a)P and many others. Pollutants are also formed from the decomposition of water used to quench coke (CO, phenol, HCN, H2S, NH3, cresol) and decomposition of hot coke in the first phase of quenching (CO, H2S, SO2) [1]. The development of the coke oven technology has resulted in the changes made to different types of technological installations, such as the use of baffles in quench towers, the removal of nitrogen oxides by selective NOx reduction, and the introduction of fabric filters for particulates removal. The BAT conclusions for coke plants [2] provide a methodology for the measurement of particulate emission from a wet, low-emission technology using Mohrhauer probes. The conclusions define the emission level for wet quenching process as 25 g/Mgcoke. The conducted research was aimed at verification of the presented method. For two of three quench towers (A and C) the requirements included in the BAT conclusions are not met and emissions amount to 87.34 and 61.35 g/Mgcoke respectively. The lowest particulates emission was recorded on the quench tower B and amounted to 22.5 g/Mgcoke, therefore not exceeding the requirements.

  14. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

    Directory of Open Access Journals (Sweden)

    Shiva Alavi

    2014-01-01

    Full Text Available Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under Χ10 magnification and adhesive remnant index (ARI score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa (P = 0.41. There was no significant difference in the ARI scores between two groups (P = 0.08. However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching.

  15. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching(SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition,etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000?C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  16. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  17. Plasma atomic layer etching using conventional plasma equipment

    International Nuclear Information System (INIS)

    Agarwal, Ankur; Kushner, Mark J.

    2009-01-01

    The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer resolution. The basis of plasma atomic layer etching (PALE) is forming a layer of passivation that allows the underlying substrate material to be etched with lower activation energy than in the absence of the passivation. The subsequent removal of the passivation with carefully tailored activation energy then removes a single layer of the underlying material. If these goals are met, the process is self-limiting. A challenge of PALE is the high cost of specialized equipment and slow processing speed. In this work, results from a computational investigation of PALE will be discussed with the goal of demonstrating the potential of using conventional plasma etching equipment having acceptable processing speeds. Results will be discussed using inductively coupled and magnetically enhanced capacitively coupled plasmas in which nonsinusoidal waveforms are used to regulate ion energies to optimize the passivation and etch steps. This strategy may also enable the use of a single gas mixture, as opposed to changing gas mixtures between steps

  18. Ion-beam enhanced etching for the 3D structuration of lithium niobate

    International Nuclear Information System (INIS)

    Gischkat, Thomas

    2010-01-01

    The present thesis deals with the usage of the ion-beam enhanced etching (IBEE) for the 3D structuration of lithium niobate (LiNbO 3 ).Hereby the approach of the enhancement of the wet-chemical etching rate due to the irradiation with energetic ions is pursued. This method is very success promising for the realization of micro- and nanostructures with perpendicular structural walls as well as small roughnesses. The aim of this thesis consisted therein to form the foundations for the realization of three-dimensional micro- and nanostructures (for instance: Layer systems and photonic crystals) in LiNbO 3 with high optical quality and to demonstrate on selected examples. Conditions for the success of the IBEE structuration technique is first of all the understanding of the defect formation under ion irradiation as well as the radiation-induced structure changes in the crystal and the change of the chemical resistance connected with this. For this the defect formation was studied in dependence on th ion mass, the ion energy, and the irradiation temperature. Thermally induced influences and effects on the radiation damage, as they can occur in intermediate steps in the complex processing, must be known and were studied by means of subsequent temperature treatment. The results from the defect studies were subsequently applied for the fabrication of micro- and nanostructures in LiNbO 3 . Shown is the realization of lateral structure with nearly perpendicular structure walls as well as the realization of thin membranes and slits. The subsequent combination of lateral structuration with the fabrication of thin membranes and slits allowed the three-dimensional structuration of LiNbO 3 . This is exemplarily shown for a microresonator and for a 2D photonic crystal with below lying air slit. [de

  19. Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

    Science.gov (United States)

    Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

    2018-06-01

    The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

  20. Influence of redeposition on the plasma etching dynamics

    International Nuclear Information System (INIS)

    Stafford, L.; Margot, J.; Delprat, S.; Chaker, M.; Pearton, S. J.

    2007-01-01

    This work reports on measurements of the degree of redeposition of sputtered species during the etching of platinum (Pt), barium-strontium-titanate (BST), strontium-bismuth-tantalate (SBT), and photoresist (PR) in a high-density argon plasma. While PR exhibits a redeposition-free behavior, the degree of redeposition of Pt, BST, and SBT species increases from 10% to 95% as the argon pressure increases from 0.5 to 10 mTorr. These results are in good agreement with the predictions of a simple model accounting for the backscattering of sputtered species following their interaction with the gas phase. Based on these results and using other experimental data reported in the literature, it is further demonstrated that, depending on the plasma etching conditions, redeposition effects can induce misinterpretation of the etch rate data

  1. Etched track radiometers in radon measurements: a review

    CERN Document Server

    Nikolaev, V A

    1999-01-01

    Passive radon radiometers, based on alpha particle etched track detectors, are very attractive for the assessment of radon exposure. The present review considers various devices used for measurement of the volume activity of radon isotopes and their daughters and determination of equilibrium coefficients. Such devices can be classified into 8 groups: (i) open or 'bare' detectors, (ii) open chambers, (iii) sup 2 sup 2 sup 2 Rn chambers with an inlet filter, (iv) advanced sup 2 sup 2 sup 2 Rn radiometers, (v) multipurpose radiometers, (vi) radiometers based on a combination of etched track detectors and an electrostatic field, (vii) radiometers based on etched track detectors and activated charcoal and (viii) devices for the measurement of radon isotopes and/or radon daughters by means of track parameter measurements. Some of them such as the open detector and the chamber with an inlet filter have a variety of modifications and are applied widely both in geophysical research and radon dosimetric surveys. At the...

  2. Method of plasma etching Ga-based compound semiconductors

    Science.gov (United States)

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  3. Femtosecond laser etching of dental enamel for bracket bonding.

    Science.gov (United States)

    Kabas, Ayse Sena; Ersoy, Tansu; Gülsoy, Murat; Akturk, Selcuk

    2013-09-01

    The aim is to investigate femtosecond laser ablation as an alternative method for enamel etching used before bonding orthodontic brackets. A focused laser beam is scanned over enamel within the area of bonding in a saw tooth pattern with a varying number of lines. After patterning, ceramic brackets are bonded and bonding quality of the proposed technique is measured by a universal testing machine. The results are compared to the conventional acid etching method. Results show that bonding strength is a function of laser average power and the density of the ablated lines. Intrapulpal temperature changes are also recorded and observed minimal effects are observed. Enamel surface of the samples is investigated microscopically and no signs of damage or cracking are observed. In conclusion, femtosecond laser exposure on enamel surface yields controllable patterns that provide efficient bonding strength with less removal of dental tissue than conventional acid-etching technique.

  4. Adiabatic tapered optical fiber fabrication in two step etching

    Science.gov (United States)

    Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

    2016-01-01

    A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

  5. High density plasma via hole etching in SiC

    International Nuclear Information System (INIS)

    Cho, H.; Lee, K.P.; Leerungnawarat, P.; Chu, S.N.G.; Ren, F.; Pearton, S.J.; Zetterling, C.-M.

    2001-01-01

    Throughwafer vias up to 100 μm deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF 6 /O 2 at a controlled rate of ∼0.6 μm min-1 and use of Al masks. Selectivities of >50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining

  6. Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

    OpenAIRE

    Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

    2017-01-01

    This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted ...

  7. Technical Efficiency of Wet Season Melon Farming

    Directory of Open Access Journals (Sweden)

    Ananti Yekti

    2017-03-01

    Full Text Available Melon is one of high-value horticulture commodity which is cultivated widely in Kulon Progo regency. The nature of agricultural products is heavily dependent on the season, so it causes the prices of agricultural products always fluctuated every time. In wet season the price of agricultural products tends to be more expensive. Melon cultivation in wet season provide an opportunity to earn higher profits than in the dry season. The price of agricultural products tends to be more expensive in wet season, thus melon cultivation in wet season prospectively generate high profits. In order to achieve high profitability, melon farming has to be done efficiently. Objective of this study was to 1 determined the factors that influence melon production in wet season 2 measured technical efficiency of melon farming and 3 identified the factors that influanced technical efficiency. Data collected during April – June 2014. Location determined by multistage cluster sampling. 45 samples of farmers who cultivated melon during wet season obtained based on quota sampling technique. Technical efficiency was measured using Cobb-Douglas Stochastic Frontier. The result reveals that 1 land use, quantity of seed, K fertilizer contributed significantly increasing melon production, while N fertilizer decreased melon production significantly 2 technical efficiency indeces ranged from 0.40 to 0.99, with a mean of  0.77; 3 farmer’s experience gave significant influence to technical efficiency of melon farming in wet season.

  8. Order of wetting transitions in electrolyte solutions.

    Science.gov (United States)

    Ibagon, Ingrid; Bier, Markus; Dietrich, S

    2014-05-07

    For wetting films in dilute electrolyte solutions close to charged walls we present analytic expressions for their effective interface potentials. The analysis of these expressions renders the conditions under which corresponding wetting transitions can be first- or second-order. Within mean field theory we consider two models, one with short- and one with long-ranged solvent-solvent and solvent-wall interactions. The analytic results reveal in a transparent way that wetting transitions in electrolyte solutions, which occur far away from their critical point (i.e., the bulk correlation length is less than half of the Debye length) are always first-order if the solvent-solvent and solvent-wall interactions are short-ranged. In contrast, wetting transitions close to the bulk critical point of the solvent (i.e., the bulk correlation length is larger than the Debye length) exhibit the same wetting behavior as the pure, i.e., salt-free, solvent. If the salt-free solvent is governed by long-ranged solvent-solvent as well as long-ranged solvent-wall interactions and exhibits critical wetting, adding salt can cause the occurrence of an ion-induced first-order thin-thick transition which precedes the subsequent continuous wetting as for the salt-free solvent.

  9. A comparison of orthodontic bracket shear bond strength on enamel deproteinized by 5.25% sodium hypochlorite using total etch and self-etch primer

    Science.gov (United States)

    Ongkowidjaja, F.; Soegiharto, B. M.; Purbiati, M.

    2017-08-01

    The shear bond strength (SBS) can be increased by removing protein pellicles from the enamel surface by deproteinization using 5.25% sodium hypochlorite (NaOCl). The SBS of a self-etch primer is lower than that of a total etch primer; nonetheless, it prevents white spot lesions. This study aimed to assess the SBS of the Anyetch (AE) total etch primer and FL-Bond II Shofu (FL) self-etch primer after enamel deproteinization using 5.25% NaOCl. Forty eight human maxillary first premolars were extracted, cleaned, and divided into four groups. In group A, brackets were bonded to the enamel without deproteinization before etching (A1: 10 teeth using total etch primer (AE); A2: 10 teeth using self-etch primer (FL)). In group B, brackets were bonded to the enamel after deproteinization with 5.25% NaOCl before etching (B1: 10 teeth using total etch primer (AE); B2: 10 teeth using self-etch primer (FL)). Brackets were bonded using Transbond XT, stored in artificial saliva for 24 h at 37°C, mounted on acrylic cylinders, and debonded using a Shimadzu AG-5000 universal testing machine. There were no significant differences in SBS between the total etch (AE) groups (p > 0.05) and between the self-etch (FL) groups (p > 0.05). There were significant differences in SBS between groups A and B. The mean SBS for groups A1, A2, B1, and B2 was 12.91±3.99, 4.46±2.47, 13.06±3.66, and 3.62±2.36 MPa, respectively. Deproteinization using NaOCl did not affect the SBS of the total etch primer (AE) group; it reduced the SBS of the self-etch primer (FL) group, but not with a statistically significant difference.

  10. Electron microscopy analysis of structural changes within white etching areas

    DEFF Research Database (Denmark)

    Diederichs, Annika Martina; Schwedt, A.; Mayer, J.

    2016-01-01

    In the present work, crack networks with white etching areas (WEAs) in cross-sections of bearings were investigated by a complementary use of SEM and TEM with the focus on the use of orientation contrast imaging and electron backscatter diffraction (EBSD). Orientation contrast imaging was used...... for the first time to give detailed insight into the microstructure of WEA. A significant difference between Nital-etched and polished WEA samples was observed. It was revealed that WEAs are composed of different areas with varying grain sizes. As a result of secondary transformation, needle-shaped grains were...

  11. Gamma dosimetry with CR-39 etch track detector

    International Nuclear Information System (INIS)

    Matiullah; Dogar, A.H.; Ahmad, N.; Amin, M.; Kudo, Katsuhisa

    1999-01-01

    To preserve and improve the safety of food for commercial purposes, it is exposed to high gamma-ray doses. The gamma-ray doses used for this purpose range from 0.15 kGy to 50 kGy. At such high doses, the etching characteristics of CR-39 are severely affected. This property, therefore, can be used to develop a CR-39-based gamma dosimeter. In this context, systematic studies were carried out and the bulk etching rate was determined as a function of gamma-ray dose using different methods. (author)

  12. A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

    Science.gov (United States)

    Yang, Eui-Hyeok; Wild, Larry

    2003-01-01

    Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article

  13. Enhanced optical performance of electrochemically etched porous silicon carbide

    International Nuclear Information System (INIS)

    Naderi, N; Hashim, M R; Saron, K M A; Rouhi, J

    2013-01-01

    Porous silicon carbide (PSC) was successfully synthesized via electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using various current densities. The cyclic voltammograms of SiC dissolution show that illumination is required for the accumulation of carriers at the surface, followed by surface oxidation and dissolution of the solid. The morphological and optical characterizations of PSC were reported. Scanning electron microscopy results demonstrated that the current density can be considered an important etching parameter that controls the porosity and uniformity of PSC; hence, it can be used to optimize the optical properties of the porous samples. (paper)

  14. Etching Effect of an Atmospheric DC Arc Plasmatron

    International Nuclear Information System (INIS)

    Chun, Se Min; Kim, Ji Hun; Kang, In Je; Lee, Heon Ju

    2010-01-01

    Thermal plasmas (especially arc plasma) were extensively industrialized, principally by aeronautic sector. Cold plasma technologies have been developed in the microelectronics but their vacuum equipment limits their implantation. Plasmas used in dry etching, thin film deposition and surface treatment for display or semiconductor industries are operating at low pressures in very costly due to the use of vacuum equipment and vacuum components. Use of DC arc plasmatrons in welding, soldering, and cutting of metals is well known. A DC-arc plasmatron with high durability was reported to be a suitable device for etching silicon and photo-resist surfaces

  15. Multifragmentation of hot nuclei

    International Nuclear Information System (INIS)

    Tamain, B.

    1990-10-01

    It is difficult to deposit a large amount (∼ 1 Gev) of excitation energy into a nucleus. And if one wants to deposit large excitation energy values, the best way consists of shooting a given target nucleus with several nucleons, which can be achieved by using intermediate energy (10-100 MeV/nucleon) heavy ions. Such very excited objects were named hot nuclei. The study of hot nuclei has been undertaken only for 7 years because intermediate energy heavy ion facilities were not available before. The game is then to determine the decay properties of such nuclei, their limits of existence. Their study is connected with general properties of nuclear matter: namely its equation of state. Of special interest, is the onset of a new decay mechanism: multifragmentation, which is the non-sequential disassembly of a hot nucleus into several light nuclei (often called intermediate-mass fragments or IMF) or particles. This paper, shows how this mechanism can reflect fundamental properties of nuclear matter, but also how its experimental signature is difficult to establish. Multifragmentation has also been studied by using very energetic projectiles (protons and heavy ions) in the relativistic or ultra-relativistic region. The multifragmentation question of hot nuclei is far from being solved. One knows that IMF production increases when the excitation energy brought into a system is strongly increased, but very little is known about the mechanisms involved and a clear onset for multifragmentation is not established

  16. Utilizing hot electrons

    Energy Technology Data Exchange (ETDEWEB)

    Nozik, Arthur J.

    2018-03-01

    In current solar cells, any photon energy exceeding the semiconductor bandgap is lost before being collected, limiting the cell performance. Hot carrier solar cells could avoid these losses. Now, a detailed experimental study and analysis shows that this strategy could lead to an improvement of the photoconversion efficiency in practice.

  17. Mechanical shielded hot cell

    International Nuclear Information System (INIS)

    Higgy, H.R.; Abdel-Rassoul, A.A.

    1983-01-01

    A plan to erect a mechanical shielded hot cell in the process hall of the Radiochemical Laboratory at Inchas is described. The hot cell is designed for safe handling of spent fuel bundles, from the Inchas reactor, and for dismantling and cutting the fuel rods in preparation for subsequent treatment. The biological shielding allows for the safe handling of a total radioactivity level up to 10,000 MeV-Ci. The hot cell consists of an α-tight stainless-steel box, connected to a γ-shielded SAS, through an air-lock containing a movable carriage. The α-box is tightly connected with six dry-storage cavities for adequate storage of the spent fuel bundles. Both the α-box, with the dry-storage cavities, and the SAS are surrounded by 200-mm thick biological lead shielding. The α-box is equipped with two master-slave manipulators, a lead-glass window, a monorail crane and Padirac and Minirag systems. The SAS is equipped with a lead-glass window, tong manipulator, a shielded pit and a mechanism for the entry of the spent fuel bundle. The hot cell is served by adequate ventilation and monitoring systems. (author)

  18. Micromorphological characterization of adhesive interface of sound dentin and total-etch and self-etch adhesives.

    Science.gov (United States)

    Drobac, Milan; Stojanac, Igor; Ramić, Bojana; Premović, Milica; Petrović, Ljubomir

    2015-01-01

    The ultimate goal in restorative dentistry has always been to achieve strong and permanent bond between the dental tissues and filling materials. It is not easy to achieve this task because the bonding process is different for enamel and dentin-dentin is more humid and more organic than enamel. It is moisture and organic nature of dentin that make this hard tissue very complex to achieve adhesive bond. One of the first and most widely used tools for examining the adhesive bond between hard dental tissues and composite restorative materials is scanning electron microscopy. The aim of this study was scanning electron microscopy analyzes the interfacial micro morphology of total-etch and self-etch adhesives. Micro morphological characteristics of interface between total-etch adhesive (Prime & Bond NT) in combination with the corresponding composite (Ceram X Mono) were compared with those of self-etching adhesive (AdheSE One) in, combination with the corresponding composite (Tetric EvoCeram). The specimens were observed under 1000 x magnification of scanning electron microscopy (JEOL, JSM-6460 Low Vacuum). Measurement of the thickness of the hybrid layer of the examined com posite systems was performed with the software of the device used (NIH Image Analyser). Micromorphological analysis of interface showed that the hybrid layer in sound dentin was well formed, its average thickness being 2.68 microm, with a large number of resin tags and a large amount of lateral branches for specimens with a composite system Prime & Bond NT-Ceram X Mono. However, the specimens' with composite systems Adhese One-Tetric EvoCeram did not show the presence of hybrid layer and the resin tags were poorly represented. The results of this study suggest that total-etch adhesives bond better with sound dentin than self-etch adhesive.

  19. Hot Deformation Behavior of Hot-Extruded AA7175 Through Hot Torsion Tests.

    Science.gov (United States)

    Lee, Se-Yeon; Jung, Taek-Kyun; Son, Hyeon-Woo; Kim, Sang-Wook; Son, Kwang-Tae; Choi, Ho-Joon; Oh, Sang-Ho; Lee, Ji-Woon; Hyun, Soong-Keun

    2018-03-01

    The hot deformation behavior of hot-extruded AA7175 was investigated with flow curves and processing maps through hot torsion tests. The flow curves and the deformed microstructures revealed that dynamic recrystallization (DRX) occurred in the hot-extruded AA7175 during hot working. The failure strain was highest at medium temperature. This was mainly influenced by the dynamic precipitation of fine rod-shaped MgZn2. The processing map determined the optimal deformation condition for the alloy during hot working.

  20. Wet granular matter a truly complex fluid

    CERN Document Server

    Herminghaus, Stephan

    2013-01-01

    This is a monograph written for the young and advanced researcher who is entering the field of wet granular matter and keen to understand the basic physical principles governing this state of soft matter. It treats wet granulates as an instance of a ternary system, consisting of the grains, a primary, and a secondary fluid. After addressing wetting phenomena in general and outlining the basic facts on dry granular systems, a chapter on basic mechanisms and their effects is dedicated to every region of the ternary phase diagram. Effects of grain shape and roughness are considered as well. Rather than addressing engineering aspects such as existing books on this topic do, the book aims to provide a generalized framework suitable for those who want to understand these systems on a more fundamental basis. Readership: For the young and advanced researcher entering the field of wet granular matter.

  1. 7 CFR 51.897 - Wet.

    Science.gov (United States)

    2010-01-01

    ... the grapes are wet from moisture from crushed, leaking, or decayed berries or from rain. Grapes which are moist from dew or other moisture condensation such as that resulting from removing grapes from a...

  2. Medications to Treat Bed-Wetting

    Science.gov (United States)

    ... suggest that depression plays a role in the cause of bed-wetting. This type of drug is thought to work one of several ways: by changing the child's sleep and wakening pattern by affecting the time ...

  3. A WET TALE: TOXICITY OF COMPLEX EFFLUENTS

    Science.gov (United States)

    This course covers standards, regulations, policy, guidance and technical aspects of implementing the whole effluent toxicity program. The curriculum incorporates rationale and information on WET test requirements from USEPA documents, such as the Technical Support Document for W...

  4. ROE Wet Sulfate Deposition 2009-2011

    Data.gov (United States)

    U.S. Environmental Protection Agency — The raster data represent the amount of wet sulfate deposition in kilograms per hectare from 2009 to 2011. Summary data in this indicator were provided by EPA’s...

  5. Zero percolation threshold in electric conductivity of aluminum nanowire network fabricated by chemical etching using an electrospun nanofiber mask

    Science.gov (United States)

    Azuma, Keisuke; Sakajiri, Koichi; Okabe, Takashi; Matsumoto, Hidetoshi; Kang, Sungmin; Watanabe, Junji; Tokita, Masatoshi

    2017-09-01

    We investigated the sheet resistance (R s) and transmittance (T) of seamless two-dimensional networks of 50-nm-thick aluminum (Al) nanowires (NWs) with widths (W) ranging from 380 to 1410 nm. The Al NWs were fabricated by wet-etching of Al metalized polyester films with using polystyrene (PS) nanofibers as the mask. The PS nanofibers were deposited by the electrospinning of a PS solution and adhered to the film by annealing. W and the area coverage (φ) were increased with increasing PS solution concentration and deposition time, respectively. With increasing φ from 3 to 34%, T and R s decreased from 99 to 75% and from 800 to 10 Ω/sq, respectively, and the network with W = 878 nm at φ = 0.21 attained values of T = 91% and R s = 31 Ω/sq. The conductivity increases with φ with an exponent of 2, demonstrating that seamless NW networks are characterized by the zero percolation threshold.

  6. Site-specific Pt deposition and etching on electrically and thermally isolated SiO2 micro-disk surfaces

    International Nuclear Information System (INIS)

    Saraf, Laxmikant V

    2010-01-01

    Electrically and thermally isolated surfaces are crucial for improving the detection sensitivity of microelectronic sensors. The site-specific in situ growth of Pt nano-rods on thermally and electrically isolated SiO 2 micro-disks using wet chemical etching and a focused ion/electron dual beam (FIB-SEM) is demonstrated. Fabrication of an array of micro-cavities on top of a micro-disk is also demonstrated. The FIB source is utilized to fabricate through-holes in the micro-disks. Due to the amorphous nature of SiO 2 micro-disks, the Ga implantation possibly modifies through-hole sidewall surface chemistry rather than affecting its transport properties. Some sensor design concepts based on micro-fabrication of SiO 2 micro-disks utilizing thermally and electrically isolated surfaces are discussed from the viewpoint of applications in photonics and bio-sensing.

  7. Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

    Science.gov (United States)

    Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

    2017-06-01

    The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

  8. Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

    Science.gov (United States)

    Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

    2018-06-01

    A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

  9. Preliminary quantification of a shape model for etch-pits formed during natural weathering of olivine

    International Nuclear Information System (INIS)

    Nowicki, M. Anna; Velbel, Michael A.

    2011-01-01

    Many etch-pits on olivine grains occur as a pair of cone-shaped pits sharing a base, which consequently appear as diamond-shaped etch-pits in cross-section. Quantitative image analysis of back-scattered electron images establishes empirical dimensions of olivine etch-pits in naturally weathered samples from Hawaii and North Carolina. Images of naturally etched olivine were acquired from polished thin-sections by scanning electron microscopy. An average cone-radius-to-height ratio (r:h) of 1.78 was determined for diamond-shaped cross-sections of etch-pits occurring in naturally weathered olivine grains, largely consistent with previous qualitative results. Olivine etch-pit shape as represented by r:h varies from slightly more than half the average value to slightly more than twice the average. Etch-pit shape does not appear to vary systematically with etch-pit size.

  10. Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

    Science.gov (United States)

    Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

    2015-01-14

    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

  11. Polymer degradation in reactive ion etching and its possible application to all dry processes

    International Nuclear Information System (INIS)

    Hiraoka, H.; Welsh, L.W. Jr.

    1981-01-01

    Dry etching processes involving CF 4 -plasma and reactive ion etching become increasingly important for microcircuit fabrication techniques. In these techniques polymer degradation and etch resistance against reactive species like F atoms and CF 3 + ions are the key factors in the processes. It is well-known that classical electron beam resists like poly(methyl methacrylate) and poly(1-butene sulfone) are not suitable for dry etching processes because they degrade rapidly under these etching conditions. In order to find a correlation of etching rate and polymer structures the thickness loss of polymer films have been measured for a variety of polymer films in reactive ion etching conditions, where CF 3 + ions are the major reactive species with an accelerating potential of 500 volts. Because of its high CF 4 -plasma and reactive ion etch resistance, and because of its high electron beam sensitivity, poly(methacrylonitrile) provides a positive working electron beam resist uniquely suited for all dry processes. (author)

  12. Software Simulation of Hot Tearing

    DEFF Research Database (Denmark)

    Andersen, S.; Hansen, P.N.; Hattel, Jesper Henri

    1999-01-01

    The brittleness of a solidifying alloy in a temperature range near the solidus temperature has been recognised since the fifties as the mechanism responsible for hot tearing. Due to this brittlenes, the metal will crack under even small amounts of strain in that temperature range. We see these hot...... tears in castings close to hot centres, where the level of strain is often too high.Although the hot tearing mechanism is well understood, until now it has been difficult to do much to reduce the hot tearing tendency in a casting. In the seventies, good hot tearing criteria were developed by considering...... the solidification rate and the strain rate of the hot tear prone areas. But, until recently it was only possible to simulate the solidification rate, so that the criteria could not be used effectively.Today, with new software developments, it is possible to also simulate the strain rate in the hot tear prone areas...

  13. Hot Fuel Examination Facility (HFEF)

    Data.gov (United States)

    Federal Laboratory Consortium — The Hot Fuel Examination Facility (HFEF) is one of the largest hot cells dedicated to radioactive materials research at Idaho National Laboratory (INL). The nation's...

  14. Curvature controlled wetting in two dimensions

    DEFF Research Database (Denmark)

    Gil, Tamir; Mikheev, Lev V.

    1995-01-01

    . As the radius of the substrate r0→∞, the leading effect of the curvature is adding the Laplace pressure ΠL∝r0-1 to the pressure balance in the film. At temperatures and pressures under which the wetting is complete in planar geometry, Laplace pressure suppresses divergence of the mean thickness of the wetting...... term reduces the thickness by the amount proportional to r0-1/3...

  15. Comparison of enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives in self-etch mode.

    Science.gov (United States)

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Hosoya, Yumiko; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

    2017-10-01

    To comparatively evaluate universal adhesives and two-step self-etch adhesives for enamel bond fatigue durability in self-etch mode. Three universal adhesives (Clearfil Universal Bond; G-Premio Bond; Scotchbond Universal Adhesive) and three two-step self-etch adhesives (Clearfil SE Bond; Clearfil SE Bond 2; OptiBond XTR) were used. The initial shear bond strength and shear fatigue strength of the adhesive to enamel in self-etch mode were determined. The initial shear bond strengths of the universal adhesives to enamel in self-etch mode was significantly lower than those of two-step self-etch adhesives and initial shear bond strengths were not influenced by type of adhesive in each adhesive category. The shear fatigue strengths of universal adhesives to enamel in self-etch mode were significantly lower than that of Clearfil SE Bond and Clearfil SE Bond 2, but similar to that OptiBond XTR. Unlike two-step self-etch adhesives, the initial shear bond strength and shear fatigue strength of universal adhesives to enamel in self-etch mode was not influenced by the type of adhesive. This laboratory study showed that the enamel bond fatigue durability of universal adhesives was lower than Clearfil SE Bond and Clearfil SE Bond 2, similar to Optibond XTR, and was not influenced by type of adhesive, unlike two-step self-etch adhesives.

  16. High-Performance Black Multicrystalline Silicon Solar Cells by a Highly Simplified Metal-Catalyzed Chemical Etching Method

    KAUST Repository

    Ying, Zhiqin

    2016-05-20

    A wet-chemical surface texturing technique, including a two-step metal-catalyzed chemical etching (MCCE) and an extra alkaline treatment, has been proven as an efficient way to fabricate high-efficiency black multicrystalline (mc) silicon solar cells, whereas it is limited by the production capacity and the cost cutting due to the complicated process. Here, we demonstrated that with careful control of the composition in etching solution, low-aspect-ratio bowl-like nanostructures with atomically smooth surfaces could be directly achieved by improved one-step MCCE and with no posttreatment, like alkali solution. The doublet surface texture of implementing this nanobowl structure upon the industrialized acidic-textured surface showed concurrent improvement in optical and electrical properties for realizing 18.23% efficiency mc-Si solar cells (156 mm × 156 mm), which is sufficiently higher than 17.7% of the solely acidic-textured cells in the same batch. The one-step MCCE method demonstrated in this study may provide a cost-effective way to manufacture high-performance mc-Si solar cells for the present photovoltaic industry. © 2016 IEEE.

  17. Effect of moisture and drying time on the bond strength of the one-step self-etching adhesive system

    Directory of Open Access Journals (Sweden)

    Yoon Lee

    2012-08-01

    Full Text Available Objectives To investigate the effect of dentin moisture degree and air-drying time on dentin-bond strength of two different one-step self-etching adhesive systems. Materials and Methods Twenty-four human third molars were used for microtensile bond strength testing of G-Bond and Clearfil S3 Bond. The dentin surface was either blot-dried or air-dried before applying these adhesive agents. After application of the adhesive agent, three different air drying times were evaluated: 1, 5, and 10 sec. Composite resin was build up to 4 mm thickness and light cured for 40 sec with 2 separate layers. Then the tooth was sectioned and trimmed to measure the microtensile bond strength using a universal testing machine. The measured bond strengths were analyzed with three-way ANOVA and regression analysis was done (p = 0.05. Results All three factors, materials, dentin wetness and air drying time, showed significant effect on the microtensile bond strength. Clearfil S3 Bond, dry dentin surface and 10 sec air drying time showed higher bond strength. Conclusions Within the limitation of this experiment, air drying time after the application of the one-step self-etching adhesive agent was the most significant factor affecting the bond strength, followed by the material difference and dentin moisture before applying the adhesive agent.

  18. Leaf wetness distribution within a potato crop

    Science.gov (United States)

    Heusinkveld, B. G.

    2010-07-01

    The Netherlands has a mild maritime climate and therefore the major interest in leaf wetness is associated with foliar plant diseases. During moist micrometeorological conditions (i.e. dew, fog, rain), foliar fungal diseases may develop quickly and thereby destroy a crop quickly. Potato crop monocultures covering several hectares are especially vulnerable to such diseases. Therefore understanding and predicting leaf wetness in potato crops is crucial in crop disease control strategies. A field experiment was carried out in a large homogeneous potato crop in the Netherlands during the growing season of 2008. Two innovative sensor networks were installed as a 3 by 3 grid at 3 heights covering an area of about 2 hectares within two larger potato crops. One crop was located on a sandy soil and one crop on a sandy peat soil. In most cases leaf wetting starts in the top layer and then progresses downward. Leaf drying takes place in the same order after sunrise. A canopy dew simulation model was applied to simulate spatial leaf wetness distribution. The dew model is based on an energy balance model. The model can be run using information on the above-canopy wind speed, air temperature, humidity, net radiation and within canopy air temperature, humidity and soil moisture content and temperature conditions. Rainfall was accounted for by applying an interception model. The results of the dew model agreed well with the leaf wetness sensors if all local conditions were considered. The measurements show that the spatial correlation of leaf wetness decreases downward.

  19. Allergenic Ingredients in Personal Hygiene Wet Wipes.

    Science.gov (United States)

    Aschenbeck, Kelly A; Warshaw, Erin M

    Wet wipes are a significant allergen source for anogenital allergic contact dermatitis. The aim of the study was to calculate the frequency of potentially allergenic ingredients in personal hygiene wet wipes. Ingredient lists from brand name and generic personal hygiene wet wipes from 4 large retailers were compiled. In the 54 personal hygiene wet wipes evaluated, a total of 132 ingredients were identified (average of 11.9 ingredients per wipe). The most common ingredients were Aloe barbadensis (77.8%), citric acid (77.8%), fragrance (72.2%), sorbic acid derivatives (63.0%), tocopherol derivatives (63.0%), glycerin (59.3%), phenoxyethanol (55.6%), disodium cocoamphodiacetate (53.7%), disodium ethylenediaminetetraacetic acid (EDTA) (42.6%), propylene glycol (42.6%), iodopropynyl butylcarbamate (40.7%), chamomile extracts (38.9%), sodium benzoate (35.2%), bronopol (22.2%), sodium citrate (22.2%), lanolin derivatives (20.4%), parabens (20.4%), polyethylene glycol derivatives (18.5%), disodium phosphate (16.7%), dimethylol dimethyl hydantoin (DMDM) (14.8%), and cocamidopropyl propylene glycol (PG)-dimonium chloride phosphate (11.1%). Of note, methylisothiazolinone (5.6%) was uncommon; methylchloroisothiazolinone was not identified in the personal hygiene wet wipes examined. There are many potential allergens in personal hygiene wet wipes, especially fragrance and preservatives.

  20. Direct determination of bulk etching rate for LR-115-II solid state ...

    Indian Academy of Sciences (India)

    The thickness of the removed layer of the LR-115-II solid state nuclear track detector during etching is measured directly with a rather precise instrument. Dependence of bulk etching rate on temperature of the etching solution is investigated. It has been found that the bulk etching rate is 3.2 m/h at 60°C in 2.5 N NaOH of ...