Reversible electron–hole separation in a hot carrier solar cell

International Nuclear Information System (INIS)

Limpert, S; Bremner, S; Linke, H

2015-01-01

Hot-carrier solar cells are envisioned to utilize energy filtering to extract power from photogenerated electron–hole pairs before they thermalize with the lattice, and thus potentially offer higher power conversion efficiency compared to conventional, single absorber solar cells. The efficiency of hot-carrier solar cells can be expected to strongly depend on the details of the energy filtering process, a relationship which to date has not been satisfactorily explored. Here, we establish the conditions under which electron–hole separation in hot-carrier solar cells can occur reversibly, that is, at maximum energy conversion efficiency. We thus focus our analysis on the internal operation of the hot-carrier solar cell itself, and in this work do not consider the photon-mediated coupling to the Sun. After deriving an expression for the voltage of a hot-carrier solar cell valid under conditions of both reversible and irreversible electrical operation, we identify separate contributions to the voltage from the thermoelectric effect and the photovoltaic effect. We find that, under specific conditions, the energy conversion efficiency of a hot-carrier solar cell can exceed the Carnot limit set by the intra-device temperature gradient alone, due to the additional contribution of the quasi-Fermi level splitting in the absorber. We also establish that the open-circuit voltage of a hot-carrier solar cell is not limited by the band gap of the absorber, due to the additional thermoelectric contribution to the voltage. Additionally, we find that a hot-carrier solar cell can be operated in reverse as a thermally driven solid-state light emitter. Our results help explore the fundamental limitations of hot-carrier solar cells, and provide a first step towards providing experimentalists with a guide to the optimal configuration of devices. (paper)

Hot-carrier effects in MOS devices

CERN Document Server

Takeda, Eiji; Miura-Hamada, Akemi

1995-01-01

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work

Plasma relaxation of cold electrons and hot ions

International Nuclear Information System (INIS)

Potapenko, I.F.; Sakanaka, P.H.

1996-01-01

The relaxation process of a space uniform plasma composed of cold electrons and one species of hot ions studied numerically. Special attention has been paid to the deviation of relaxation from the classical picture which is characterized by a weakly non-isothermic situation. (author). 6 refs., 2 figs

Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

Science.gov (United States)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

International Nuclear Information System (INIS)

Feng, Shih-Wei; Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

2015-01-01

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun [Department of Applied Physics, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan Tzu Dist., 811 Kaohsiung, Taiwan (China); Leung, Benjamin; Han, Jung [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Yang, Fann-Wei [Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan, Taiwan (China); Wang, Hsiang-Chen [Graduate Institute of Opto-Mechatronics and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chia-Yi, Taiwan (China)

2015-07-28

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature

Science.gov (United States)

Nguyen, Dac-Trung; Lombez, Laurent; Gibelli, François; Boyer-Richard, Soline; Le Corre, Alain; Durand, Olivier; Guillemoles, Jean-François

2018-03-01

In common photovoltaic devices, the part of the incident energy above the absorption threshold quickly ends up as heat, which limits their maximum achievable efficiency to far below the thermodynamic limit for solar energy conversion. Conversely, the conversion of the excess kinetic energy of the photogenerated carriers into additional free energy would be sufficient to approach the thermodynamic limit. This is the principle of hot carrier devices. Unfortunately, such device operation in conditions relevant for utilization has never been evidenced. Here, we show that the quantitative thermodynamic study of the hot carrier population, with luminance measurements, allows us to discuss the hot carrier contribution to the solar cell performance. We demonstrate that the voltage and current can be enhanced in a semiconductor heterostructure due to the presence of the hot carrier population in a single InGaAsP quantum well at room temperature. These experimental results substantiate the potential of increasing photovoltaic performances in the hot carrier regime.

Dual resonance approach to optical signal processing beyond the carrier relaxation rate

DEFF Research Database (Denmark)

Heuck, Mikkel; Kristensen, Philip Trøst; Mørk, Jesper

2014-01-01

We propose using two optical cavities in a differential control scheme to increase the bandwidth of cavity-based semiconductor optical signal processing devices beyond the limit given by the slowest carrier relaxation rate of the medium.......We propose using two optical cavities in a differential control scheme to increase the bandwidth of cavity-based semiconductor optical signal processing devices beyond the limit given by the slowest carrier relaxation rate of the medium....

Hot Charge Carrier Transmission from Plasmonic Nanostructures

Science.gov (United States)

Christopher, Phillip; Moskovits, Martin

2017-05-01

Surface plasmons have recently been harnessed to carry out processes such as photovoltaic current generation, redox photochemistry, photocatalysis, and photodetection, all of which are enabled by separating energetic (hot) electrons and holes—processes that, previously, were the domain of semiconductor junctions. Currently, the power conversion efficiencies of systems using plasmon excitation are low. However, the very large electron/hole per photon quantum efficiencies observed for plasmonic devices fan the hope of future improvements through a deeper understanding of the processes involved and through better device engineering, especially of critical interfaces such as those between metallic and semiconducting nanophases (or adsorbed molecules). In this review, we focus on the physics and dynamics governing plasmon-derived hot charge carrier transfer across, and the electronic structure at, metal-semiconductor (molecule) interfaces, where we feel the barriers contributing to low efficiencies reside. We suggest some areas of opportunity that deserve early attention in the still-evolving field of hot carrier transmission from plasmonic nanostructures to neighboring phases.

Long-lived hot-carrier light emission and large blue shift in formamidinium tin triiodide perovskites

NARCIS (Netherlands)

Fang, Hong-Hua; Adjokatse, Sampson; Shao, Shuyan; Even, Jacky; Loi, Maria Antonietta

2018-01-01

A long-lived hot carrier population is critical in order to develop working hot carrier photovoltaic devices with efficiencies exceeding the Shockley-Queisser limit. Here, we report photoluminescence from hot-carriers with unexpectedly long lifetime (a few ns) in formamidinium tin triiodide. An

Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers

KAUST Repository

Khan, Mohammed Zahed Mustafa

2011-12-01

The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance. © 2011 IEEE.

On the relaxation of cold electrons and hot ions

International Nuclear Information System (INIS)

Potapenko, I.F.; Bobylev, A.V.; Azevedo, C.A. de; Sakanaka, P.H.; Assis, A.S. de

1998-01-01

The relaxation process of a space uniform plasma composed of cold electrons and one species of hot ions is studied numerically using one- and two-dimensional Landau - Fokker - Planck codes. Relaxation of a monoenergetic ion beam is considered in possibly extreme temperature regimes. Special attention is paid to the deviation of the relaxation process from the classical picture, which is characterized by the close initial temperatures T e >(m e /m i ) 1/3 T i . The present results give quite a clear idea of the relaxation picture for any initial temperatures also in extreme temperature regimes. A difference scheme, preserving the number of particles and the energy, gives the possibility of solving the problem numerically without error accumulation, except for machine errors. copyright 1998 American Institute of Physics

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

Science.gov (United States)

Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

2017-10-01

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

Trap-Free Hot Carrier Relaxation in Lead–Halide Perovskite Films

KAUST Repository

Bretschneider, Simon A.; Laquai, Fré dé ric; Bonn, Mischa

2017-01-01

Photovoltaic devices that employ lead-halide perovskites as photoactive materials exhibit power conversion efficiencies of 22%. One of the potential routes to go beyond the current efficiencies is to extract charge carriers that carry excess energy, that is, nonrelaxed or

Trap-Free Hot Carrier Relaxation in Lead–Halide Perovskite Films

KAUST Repository

Bretschneider, Simon A.

2017-05-08

Photovoltaic devices that employ lead-halide perovskites as photoactive materials exhibit power conversion efficiencies of 22%. One of the potential routes to go beyond the current efficiencies is to extract charge carriers that carry excess energy, that is, nonrelaxed or

Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure

Energy Technology Data Exchange (ETDEWEB)

Kurtze, H.; Bayer, M. [Experimentelle Physik 2, TU Dortmund, D-44221 Dortmund (Germany)

2016-07-04

Sophisticated models have been worked out to explain the fast relaxation of carriers into quantum dot ground states after non-resonant excitation, overcoming the originally proposed phonon bottleneck. We apply a magnetic field along the quantum dot heterostructure growth direction to transform the confined level structure, which can be approximated by a Fock–Darwin spectrum, from a nearly equidistant level spacing at zero field to strong anharmonicity in finite fields. This changeover leaves the ground state carrier population rise time unchanged suggesting that fast relaxation is maintained upon considerable changes of the level spacing. This corroborates recent models explaining the relaxation by polaron formation in combination with quantum kinetic effects.

Long-lived hot-carrier light emission and large blue shift in formamidinium tin triiodide perovskites

OpenAIRE

Fang, Hong-Hua; Adjokatse, Sampson; Shao, Shuyan; Even, Jacky; Loi, Maria Antonietta

2018-01-01

A long-lived hot carrier population is critical in order to develop working hot carrier photovoltaic devices with efficiencies exceeding the Shockley-Queisser limit. Here, we report photoluminescence from hot-carriers with unexpectedly long lifetime (a few ns) in formamidinium tin triiodide. An unusual large blue shift of the time-integrated photoluminescence with increasing excitation power (150 meV at 24 K and 75 meV at 293 K) is displayed. On the basis of the analysis of energy-resolved an...

Electron-Phonon Coupling and Resonant Relaxation from 1D and 1P States in PbS Quantum Dots.

Science.gov (United States)

Kennehan, Eric R; Doucette, Grayson S; Marshall, Ashley R; Grieco, Christopher; Munson, Kyle T; Beard, Matthew C; Asbury, John B

2018-05-31

Observations of the hot-phonon bottleneck, which is predicted to slow the rate of hot carrier cooling in quantum confined nanocrystals, have been limited to date for reasons that are not fully understood. We used time-resolved infrared spectroscopy to directly measure higher energy intraband transitions in PbS colloidal quantum dots. Direct measurements of these intraband transitions permitted detailed analysis of the electronic overlap of the quantum confined states that may influence their relaxation processes. In smaller PbS nanocrystals, where the hot-phonon bottleneck is expected to be most pronounced, we found that relaxation of parity selection rules combined with stronger electron-phonon coupling led to greater spectral overlap of transitions among the quantum confined states. This created pathways for fast energy transfer and relaxation that may bypass the predicted hot-phonon bottleneck. In contrast, larger, but still quantum confined nanocrystals did not exhibit such relaxation of the parity selection rules and possessed narrower intraband states. These observations were consistent with slower relaxation dynamics that have been measured in larger quantum confined systems. These findings indicated that, at small radii, electron-phonon interactions overcome the advantageous increase in energetic separation of the electronic states for PbS quantum dots. Selection of appropriately sized quantum dots, which minimize spectral broadening due to electron-phonon interactions while maximizing electronic state separation, is necessary to observe the hot-phonon bottleneck. Such optimization may provide a framework for achieving efficient hot carrier collection and multiple exciton generation.

Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors

International Nuclear Information System (INIS)

Witczak, S.C.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

1994-01-01

The combined effects of ionizing radiation and hot-carrier stress on the current gain of npn bipolar junction transistors were investigated. The analysis was carried out experimentally by examining the consequences of interchanging the order in which the two stress types were applied to identical transistors which were stressed to various levels of damage. The results indicate that the hot-carrier response of the transistor is improved by radiation damage, whereas hot-carrier damage has little effect on subsequent radiation stress. Characterization of the temporal progression of hot-carrier effects revealed that hot-carrier stress acts initially to reduce excess base current and improve current gain in irradiated transistors. PISCES simulations show that the magnitude of the peak electric-field within the emitter-base depletion region is reduced significantly by net positive oxide charges induced by radiation. The interaction of the two stress types is explained in a qualitative model based on the probability of hot-carrier injection determined by radiation damage and on the neutralization and compensation of radiation-induced positive oxide charges by injected electrons. The result imply that a bound on damage due to the combined stress types is achieved when hot-carrier stress precedes any irradiation

Carrier relaxation dynamics in InAs/InGaAlAs quantum dashes

KAUST Repository

Ryasnyanskiy, A.I.; Biaggio, I.; Djie, Hery Susanto; Ooi, Boon S.; Tan, C.L.

2011-01-01

We characterize size-dependent carrier relaxation dynamics of partial laser structures containing quantum dashes by time-resolved degenerate four wave mixing between 1.2 and 1.6 ?m. © 2010 Elsevier B.V. All rights reserved.

Carrier relaxation dynamics in InAs/InGaAlAs quantum dashes

KAUST Repository

Ryasnyanskiy, A.I.

2011-03-01

We characterize size-dependent carrier relaxation dynamics of partial laser structures containing quantum dashes by time-resolved degenerate four wave mixing between 1.2 and 1.6 ?m. © 2010 Elsevier B.V. All rights reserved.

Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium.

Science.gov (United States)

Yu, T; Wu, M W

2015-07-01

The hot-electron effect in the spin relaxation of electrically injected electrons in intrinsic germanium is investigated by the kinetic spin Bloch equations both analytically and numerically. It is shown that in the weak-electric-field regime with E ≲ 0.5 kV cm(-1), our calculations have reasonable agreement with the recent transport experiment in the hot-electron spin-injection configuration (2013 Phys. Rev. Lett. 111 257204). We reveal that the spin relaxation is significantly enhanced at low temperature in the presence of weak electric field E ≲ 50 V cm(-1), which originates from the obvious center-of-mass drift effect due to the weak electron-phonon interaction, whereas the hot-electron effect is demonstrated to be less important. This can explain the discrepancy between the experimental observation and the previous theoretical calculation (2012 Phys. Rev. B 86 085202), which deviates from the experimental results by about two orders of magnitude at low temperature. It is further shown that in the strong-electric-field regime with 0.5 ≲ E ≲ 2 kV cm(-1), the spin relaxation is enhanced due to the hot-electron effect, whereas the drift effect is demonstrated to be marginal. Finally, we find that when 1.4 ≲ E ≲ 2 kV cm(-1) which lies in the strong-electric-field regime, a small fraction of electrons (≲5%) can be driven from the L to Γ valley, and the spin relaxation rates are the same for the Γ and L valleys in the intrinsic sample without impurity. With the negligible influence of the spin dynamics in the Γ valley to the whole system, the spin dynamics in the L valley can be measured from the Γ valley by the standard direct optical transition method.

Dual-resonances approach to broadband cavity-assisted optical signal processing beyond the carrier relaxation rate

DEFF Research Database (Denmark)

Heuck, Mikkel; Kristensen, Philip Trøst; Mørk, Jesper

2014-01-01

We propose and analyze a differential control scheme for cavity-enhanced optical signal processing devices based on carrier nonlinearities. The scheme relies on two optical cavities to increase the bandwidth beyond the limit given by the slowest carrier relaxation rate of the medium. Practical...

Tin Oxide Nanowires: The Influence of Trap States on Ultrafast Carrier Relaxation

Directory of Open Access Journals (Sweden)

Zervos Matthew

2009-01-01

Full Text Available Abstract We have studied the optical properties and carrier dynamics in SnO2nanowires (NWs with an average radius of 50 nm that were grown via the vapor–liquid solid method. Transient differential absorption measurements have been employed to investigate the ultrafast relaxation dynamics of photogenerated carriers in the SnO2NWs. Steady state transmission measurements revealed that the band gap of these NWs is 3.77 eV and contains two broad absorption bands. The first is located below the band edge (shallow traps and the second near the center of the band gap (deep traps. Both of these absorption bands seem to play a crucial role in the relaxation of the photogenerated carriers. Time resolved measurements suggest that the photogenerated carriers take a few picoseconds to move into the shallow trap states whereas they take ~70 ps to move from the shallow to the deep trap states. Furthermore the recombination process of electrons in these trap states with holes in the valence band takes ~2 ns. Auger recombination appears to be important at the highest fluence used in this study (500 μJ/cm2; however, it has negligible effect for fluences below 50 μJ/cm2. The Auger coefficient for the SnO2NWs was estimated to be 7.5 ± 2.5 × 10−31 cm6/s.

Investigating the degradation behavior under hot carrier stress for InGaZnO TFTs with symmetric and asymmetric structures

International Nuclear Information System (INIS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Chen, Te-Chih; Hsieh, Tien-Yu; Chen, Yu-Te; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

2013-01-01

This letter studies the hot-carrier effect in indium–gallium–zinc oxide (IGZO) thin film transistors with symmetric and asymmetric source/drain structures. The different degradation behaviors after hot-carrier stress in symmetric and asymmetric source/drain devices indicate that different mechanisms dominate the degradation. Since the C–V measurement is highly sensitive to trap states compared to the I–V characterization, C–V curves are utilized to analyze the hot-carrier stress-induced trap state generation. Furthermore, the asymmetric C–V measurements C GD (gate-to-drain capacitance) and C GS (gate-to-source capacitance) are used to analyze the trap state in channel location. The asymmetric source/drain structure under hot-carrier stress induces an asymmetric electrical field and causes different degradation behaviors. In this work, the on-current and subthreshold swing (S.S.) degrade under low electrical field, whereas an apparent V t shift occurs under large electrical field. The different degradation behaviors indicate that trap states are generated under a low electrical field and the channel-hot-electron (CHE) effect occurs under a large electrical field. - Highlights: ► Asymmetric structure thin film transistors improve kick-back effect. ► Asymmetric structures under hot-carrier stress induce different degradation. ► Hot-carrier stress leads to capacitance–voltage curve distortion. ► Extra trap states are generated during hot-carrier stress

Correlation of carrier localization with relaxation time distribution and electrical conductivity relaxation in silver-nanoparticle-embedded moderately doped polypyrrole nanostructures

Science.gov (United States)

Biswas, Swarup; Dutta, Bula; Bhattacharya, Subhratanu

2014-02-01

The electrical conductivity relaxation in moderately doped polypyrrole and its nanocomposites reinforced with different proportion of silver nanoparticles was investigated in both frequency and time domain. An analytical distribution function of relaxation times is constructed from the results obtained in the frequency domain formalism and is used to evaluate the Kohlrausch-Williams-Watts (KWW) type decay function in the time domain. The thermal evolution of different relaxation parameters was analyzed. The temperature-dependent dc electrical conductivity, estimated from the average conductivity relaxation time is observed to depend strongly on the nanoparticle loading and follows Mott three-dimensional variable range hopping (VRH) conduction mechanism. The extent of charge carrier localization calculated from the VRH mechanism is well correlated to the evidences obtained from the structural characterizations of different nanostructured samples.

Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability

Science.gov (United States)

Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2017-11-01

An explicit surface potential and subthreshold current model for novel Dual Metal Gate (DMG) Asymmetric Vacuum (AV) as gate dielectric Schottky Barrier (SB) Cylindrical Gate All Around (CGAA) MOSFET with the incorporation of localized charges (Nf) is developed to provide excellent immunity against threshold voltage (Vth) degradation due to hot carriers. Hot carrier induced Localized Charges (LC) either positive or negative leads to degrade the threshold of the device. The major advantage of the proposed DMG-AV-SB-CGAA MOSFET is that it mitigates the ambipolar behavior thus offering very good on current to off current ratio; and also reduces the electron temperature which leads to less hot carrier generation thus lesser degradation in Vth and improved Hot Carrier reliability. The surface potential is determined for three different regions by solving 1-D Poisson's and 2-D Laplace equation through separation of variable method to facilitate an optimal model for calculating the subthreshold drain current from Si-SiO2 interface boundary. The developed model results are in good agreement with that of ATLAS-TCAD simulation.

Ultrafast collinear scattering and carrier multiplication in graphene.

Science.gov (United States)

Brida, D; Tomadin, A; Manzoni, C; Kim, Y J; Lombardo, A; Milana, S; Nair, R R; Novoselov, K S; Ferrari, A C; Cerullo, G; Polini, M

2013-01-01

Graphene is emerging as a viable alternative to conventional optoelectronic, plasmonic and nanophotonic materials. The interaction of light with charge carriers creates an out-of-equilibrium distribution, which relaxes on an ultrafast timescale to a hot Fermi-Dirac distribution, that subsequently cools emitting phonons. Although the slower relaxation mechanisms have been extensively investigated, the initial stages still pose a challenge. Experimentally, they defy the resolution of most pump-probe setups, due to the extremely fast sub-100 fs carrier dynamics. Theoretically, massless Dirac fermions represent a novel many-body problem, fundamentally different from Schrödinger fermions. Here we combine pump-probe spectroscopy with a microscopic theory to investigate electron-electron interactions during the early stages of relaxation. We identify the mechanisms controlling the ultrafast dynamics, in particular the role of collinear scattering. This gives rise to Auger processes, including charge multiplication, which is key in photovoltage generation and photodetectors.

Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

Science.gov (United States)

Teng, Lihua; Jiang, Tianran; Wang, Xia; Lai, Tianshu

2018-05-01

Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov-Perel' (DP) mechanism can be more important than the Bir-Aronov-Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping.

Non-equilibrium carrier efect in the optical properties of semiconductors

International Nuclear Information System (INIS)

Teschke, O.

1980-01-01

The time-resolved reflectivity of picosecond pulses from optically excited carrier distributions can provide important information about the energy relaxation rates of hot electrons and holes in semiconductors. the basic optical properties of non-equilibrium carrier distributions of GaAs are discussed. A semi-empirical analysis of the reflectivity spectrum is presented and the contributions of different effects are estimated. The results are in qualitative agreement with recent experiments employing dye lasers. (Author) [pt

Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

International Nuclear Information System (INIS)

Lei Xiao-Yi; Liu Hong-Xia; Zhang Kai; Zhang Yue; Zheng Xue-Feng; Ma Xiao-Hua; Hao Yue

2013-01-01

The hot carrier effect (HCE) of an ultra-deep sub-micron p-channel metal—oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W), channel length (L), and stress voltage (V d ) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface

NARCIS (Netherlands)

Parui, S.; Klandermans, P. S.; Venkatesan, S.; Scheu, C.; Banerjee, T.

2013-01-01

Hot electron transport of direct and scattered carriers across an epitaxial NiSi2/n-Si(111) interface, for different NiSi2 thickness, is studied using ballistic electron emission microscopy (BEEM). We find the BEEM transmission for the scattered hot electrons in NiSi2 to be significantly lower than

Study of charge-carrier relaxation in a disordered organic semiconductor by simulating impedance spectroscopy

NARCIS (Netherlands)

Mesta, M.; Cottaar, J.; Coehoorn, R.; Bobbert, P.A.

2014-01-01

Impedance spectroscopy is a very sensitive probe of nonstationary charge transport governed by charge-carrier relaxation in devices of disordered organic semiconductors. We simulate impedance spectroscopy measurements of hole-only devices of a polyfluorene-based disordered organic semiconductor by

Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

Science.gov (United States)

Vanderhoef, Laura R.

Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

Real-time relaxation and kinetics in hot scalar QED: Landau damping

International Nuclear Information System (INIS)

Boyanovsky, D.; Vega, H.J. de; Holman, R.; Kumar, S.P.; Pisarski, R.D.

1998-01-01

The real time evolution of non-equilibrium expectation values with soft length scales ∼k -1 >(eT) -1 is solved in hot scalar electrodynamics, with a view towards understanding relaxational phenomena in the QGP and the electroweak plasma. We find that the gauge invariant non-equilibrium expectation values relax via power laws to asymptotic amplitudes that are determined by the quasiparticle poles. The long time relaxational dynamics and relevant time scales are determined by the behavior of the retarded self-energy not at the small frequencies, but at the Landau damping thresholds. This explains the presence of power laws and not of exponential decay. In the process we rederive the HTL effective action using non-equilibrium field theory. Furthermore we obtain the influence functional, the Langevin equation and the fluctuation-dissipation theorem for the soft modes, identifying the correlators that emerge in the classical limit. We show that a Markovian approximation fails to describe the dynamics both at short and long times. We find that the distribution function for soft quasiparticles relaxes with a power law through Landau damping. We also introduce a novel kinetic approach that goes beyond the standard Boltzmann equation by incorporating off-shell processes and find that the distribution function for soft quasiparticles relaxes with a power law through Landau damping. We find an unusual dressing dynamics of bare particles and anomalous (logarithmic) relaxation of hard quasiparticles. copyright 1998 The American Physical Society

Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

Science.gov (United States)

Wang, Yuda; Jackson, Howard E; Smith, Leigh M; Burgess, Tim; Paiman, Suriati; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

2014-12-10

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effects

Science.gov (United States)

Lowry, Lynn E.; Macwilliams, Kenneth P.; Isaac, Mary

1991-01-01

The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.

Hot Carrier Generation and Extraction of Plasmonic Alloy Nanoparticles.

Science.gov (United States)

Valenti, Marco; Venugopal, Anirudh; Tordera, Daniel; Jonsson, Magnus P; Biskos, George; Schmidt-Ott, Andreas; Smith, Wilson A

2017-05-17

The conversion of light to electrical and chemical energy has the potential to provide meaningful advances to many aspects of daily life, including the production of energy, water purification, and optical sensing. Recently, plasmonic nanoparticles (PNPs) have been increasingly used in artificial photosynthesis (e.g., water splitting) devices in order to extend the visible light utilization of semiconductors to light energies below their band gap. These nanoparticles absorb light and produce hot electrons and holes that can drive artificial photosynthesis reactions. For n-type semiconductor photoanodes decorated with PNPs, hot charge carriers are separated by a process called hot electron injection (HEI), where hot electrons with sufficient energy are transferred to the conduction band of the semiconductor. An important parameter that affects the HEI efficiency is the nanoparticle composition, since the hot electron energy is sensitive to the electronic band structure of the metal. Alloy PNPs are of particular importance for semiconductor/PNPs composites, because by changing the alloy composition their absorption spectra can be tuned to accurately extend the light absorption of the semiconductor. This work experimentally compares the HEI efficiency from Ag, Au, and Ag/Au alloy nanoparticles to TiO 2 photoanodes for the photoproduction of hydrogen. Alloy PNPs not only exhibit tunable absorption but can also improve the stability and electronic and catalytic properties of the pure metal PNPs. In this work, we find that the Ag/Au alloy PNPs extend the stability of Ag in water to larger applied potentials while, at the same time, increasing the interband threshold energy of Au. This increasing of the interband energy of Au suppresses the visible-light-induced interband excitations, favoring intraband excitations that result in higher hot electron energies and HEI efficiencies.

Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

Science.gov (United States)

Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

2017-08-23

We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures

Energy Technology Data Exchange (ETDEWEB)

Rodière, Jean; Lombez, Laurent, E-mail: laurent.lombez@chimie-paristech.fr [IRDEP, Institute of R and D on Photovoltaic Energy, UMR 7174, CNRS-EDF-Chimie ParisTech, 6 Quai Watier-BP 49, 78401 Chatou Cedex (France); Le Corre, Alain; Durand, Olivier [INSA, FOTON-OHM, UMR 6082, F-35708 Rennes (France); Guillemoles, Jean-François [IRDEP, Institute of R and D on Photovoltaic Energy, UMR 7174, CNRS-EDF-Chimie ParisTech, 6 Quai Watier-BP 49, 78401 Chatou Cedex (France); NextPV, LIA CNRS-RCAST/U. Tokyo-U. Bordeaux, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan)

2015-05-04

We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells (QWs) using optical characterizations and demonstrate its potential to work as a hot carrier cell absorber. By analyzing photoluminescence spectra, the quasi Fermi level splitting Δμ and the carrier temperature are quantitatively measured as a function of the excitation power. Moreover, both thermodynamics values are measured at the QWs and the barrier emission energy. High values of Δμ are found for both transition, and high carrier temperature values in the QWs. Remarkably, the quasi Fermi level splitting measured at the barrier energy exceeds the absorption threshold of the QWs. This indicates a working condition beyond the classical Shockley-Queisser limit.

Determination of Hot-Carrier Distribution Functions in Uniaxially Stressed p-Type Germanium

DEFF Research Database (Denmark)

Christensen, Ove

1973-01-01

This paper gives a description of an experimental determination of distribution functions in k→ space of hot holes in uniaxially compressed germanium. The hot-carrier studies were made at 85°K at fields up to 1000 V/cm and uniaxial stresses up to 11 800 kg/cm2. The field and stress were always in...... probabilities with stress. A model based on the nonparabolicity of the upper p3 / 2 level is proposed for the negative differential conductivity in stressed p-type Ge....... function has been assumed. The parameters of the distribution function are then fitted to the experimental modulation. The calculation of absorption was performed numerically, using a four-band k→·p→ model. This model was checked for consistency by comparing with piezoabsorption measurements performed...... in thermal equilibrium. The average carrier energy calculated from the distribution function shows a fast increase with stress and almost saturates when the strain splitting of the two p3 / 2 levels reaches the optical-phonon energy. This saturation is interpreted in terms of the change in scattering...

Dynamics of photoexcited carrier relaxation and recombination in CdTe/CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Levi, D.H.; Fluegel, B.D.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. Femtosecond time-resolved pump/probe measurements indicate the possible existence of a two-phase CdS/CdSTe layer, rather than a continuously graded alloy layer at the CdTe/CdS interface. Complementary time-resolved photoluminescence (PL) measurements show that the photoexcited carriers are rapidly captured by deep-level defects. The temporal and density-dependent properties of the photoluminescence prove that the large Stokes shift of the PL relative to the band edge is due to strong phonon coupling to deep-level defects in CdS. The authors suggest that modifications in the CdS processing may enhance carrier collection efficiency in the blue spectral region.

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Directory of Open Access Journals (Sweden)

Jingyu Shen

2018-01-01

Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

Duchenne muscular dystrophy carriers. Proton spin-lattice relaxation times of skeletal muscles on magnetic resonance imaging

Energy Technology Data Exchange (ETDEWEB)

Matsumura, K.; Nakano, I. (Shimoshizu National Hospital, Chiba (Japan). Dept. of Neurology); Fukuda, N.; Ikehira, H.; Tateno, Y. (National Inst. of Radiological Sciences, Chiba (Japan). Div. of Clinical Research); Aoki, Y. (National Inst. of Radiological Sciences, Chiba (Japan))

1989-11-01

By means of magnetic resonance imaging (MRI), the proton spin-lattice relaxation times (T1 values) of the skeletal muscles were measured in Duchenne muscular dystrophy (DMD) carriers and normal controls. The bound water fraction (BWF) was calculated from the T1 values obtained, according to the fast proton diffusion model. In the DMD carriers, T1 values of the gluteus maximus and quadriceps femoris muscles were significantly higher, and BWFs of these muscles were significantly lower than in normal control. Degenerative muscular changes accompanied by interstitial edema were presumed responsible for this abnormality. No correlation was observed between the muscle T1 and serum creatine kinase values. The present study showed that MRI could be a useful method for studying the dynamic state of water in both normal and pathological skeletal muscles. Its possible utility for DMD carrier detection was discussed briefly. (orig.).

Relaxation of photogenerated carriers under He, H sub 2 , CO sub 2 and O sub 2 on ZnO

CERN Document Server

Han, C S; Jun, J

1998-01-01

The relaxation process of photogenerated carriers was investigated using conductivity measurement on ZnO under He,H sub 2 ,CO sub 2 and O sub 2. The process was well explained with the rate constant of reaction or recombination of hole and electron, k sub h and k sub e (k sub h >k sub e), respectively. Generally, k sub h increased with the pressure of the gases. The slope of k sub h with respect to the pressure increased in the order of H sub 2<=Herelaxation process on ZnO which was exposed to oxygen at 298 K and 573 K was observed during the illumination time. From the result, it was suggested that the rate constant of photo generated excess carriers was affected by the surface barrier of the semiconductor.

Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate

Science.gov (United States)

Pal, P.; Ghosh, A.

2016-07-01

In this paper, we have studied the dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate. Structural and thermal properties have been examined using X-ray diffraction and differential scanning calorimetry, respectively. We have analyzed the complex conductivity spectra by using power law model coupled with the contribution of electrode polarization at low frequencies and high temperatures. The temperature dependence of the ionic conductivity and crossover frequency exhibits Vogel-Tammann-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and ethylene carbonate concentrations. The analysis of the ac conductivity also shows the existence of a nearly constant loss in these polymer electrolytes at low temperatures and high frequencies. The fraction of free anions and ion pairs in polymer electrolyte have been obtained from the analysis of Fourier transform infrared spectra. It is observed that these quantities influence the behavior of the composition dependence of the ionic conductivity.

Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate

Energy Technology Data Exchange (ETDEWEB)

Pal, P.; Ghosh, A., E-mail: sspag@iacs.res.in [Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

2016-07-28

In this paper, we have studied the dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate. Structural and thermal properties have been examined using X-ray diffraction and differential scanning calorimetry, respectively. We have analyzed the complex conductivity spectra by using power law model coupled with the contribution of electrode polarization at low frequencies and high temperatures. The temperature dependence of the ionic conductivity and crossover frequency exhibits Vogel-Tammann-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and ethylene carbonate concentrations. The analysis of the ac conductivity also shows the existence of a nearly constant loss in these polymer electrolytes at low temperatures and high frequencies. The fraction of free anions and ion pairs in polymer electrolyte have been obtained from the analysis of Fourier transform infrared spectra. It is observed that these quantities influence the behavior of the composition dependence of the ionic conductivity.

Hot carrier injection degradation under dynamic stress

International Nuclear Information System (INIS)

Ma Xiao-Hua; Cao Yan-Rong; Hao Yue; Zhang Yue

2011-01-01

In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under V g = 0 V and V d = 1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under V g = −1.8 V and V d = 1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells

International Nuclear Information System (INIS)

Takeda, Yasuhiko; Sugimoto, Noriaki; Ichiki, Akihisa; Kusano, Yuya; Motohiro, Tomoyoshi

2015-01-01

Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs) and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs

Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells

Energy Technology Data Exchange (ETDEWEB)

Takeda, Yasuhiko, E-mail: takeda@mosk.tytlabs.co.jp; Sugimoto, Noriaki [Toyota Central Research and Development Laboratories, Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192 (Japan); Ichiki, Akihisa [Green Mobility Collaborative Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Kusano, Yuya [Green Mobility Collaborative Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Toyota Motor Corp., 1200 Mishuku, Susono, Shizuoka 410-1193 (Japan); Motohiro, Tomoyoshi [Toyota Central Research and Development Laboratories, Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192 (Japan); Green Mobility Collaborative Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan)

2015-09-28

Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs) and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs.

A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

Science.gov (United States)

Venter, Petrus J.; Alberts, Antonie C.; du Plessis, Monuko; Joubert, Trudi-Heleen; Goosen, Marius E.; Janse van Rensburg, Christo; Rademeyer, Pieter; Fauré, Nicolaas M.

2013-03-01

Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.

Hot-carrier solar cells using low-dimensional quantum structures

Energy Technology Data Exchange (ETDEWEB)

Watanabe, Daiki; Kasamatsu, Naofumi; Harada, Yukihiro; Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)

2014-10-27

We propose a high-conversion-efficiency solar cell (SC) utilizing the hot carrier (HC) population in an intermediate-band (IB) of a quantum dot superlattice (QDSL) structure. The bandgap of the host semiconductor in this device plays an important role as an energy-selective barrier for HCs in the QDSLs. According to theoretical calculation using the detailed balance model with an air mass 1.5 spectrum, the optimum IB energy is determined by a trade-off relation between the number of HCs with energy exceeding the conduction-band edge and the number of photons absorbed by the valence band−IB transition. Utilizing experimental data of HC temperature in InAs/GaAs QDSLs, the maximum conversion efficiency under maximum concentration (45 900 suns) has been demonstrated to increase by 12.6% as compared with that for a single-junction GaAs SC.

Ultrafast Carrier Dynamics Measured by the Transient Change in the Reflectance of InP and GaAs Film

Energy Technology Data Exchange (ETDEWEB)

Klopf, John [Helmholtz Association of German Research Centers, Dresden (Germany)

2005-10-31

Advancements in microfabrication techniques and thin film growth have led to complex integrated photonic devices, also known as optoelectronics. The performance of these devices relies upon precise control of the band gap and optical characteristics of the thin film structures, as well as a fundamental understanding of the photoexcited carrier thermalization, relaxation, and recombination processes. An optical pump-probe technique has been developed to measure the transient behavior of these processes on a sub-picosecond timescale. This method relies upon the generation of hot carriers by theabsorption of an intense ultrashort laser pulse (~ 135 fs). The transient changes in reflectance due to the pump pulse excitation are monitored using a weaker probe pulse. Control of the relative time delay between the pump and probe pulses allows for temporal measurements with resolution limited only by the pulse width. The transient change in reflectance is the result of a transient change in the carrier distribution. Observation of the reflectance response of indium phosphide (InP) and gallium arsenide (GaAs) films on a sub-picosecond timescale allows for detailed examination of thermalization and relaxation processes of the excited carriers. Longer timescales (> 100 ps) are useful for correlating the transient reflectance response to slower processes such as the diffusion and recombination of the photoexcited carriers. This research investigates the transient hot carrier processes in several InP and GaAs based films similar to those commonly used in optoelectronics. This technique is especially important as it provides a non-destructive means of evaluating these materials; whereas much of the research performed in this field has relied upon the measurement of transient changes in the transmission of transparent films. The process of preparing films that are transparent renders them unusable in functioning devices. This research should not only extend the understanding of

Hot phonon generation by split-off hole band electrons in AlxGa1-xAs alloys investigated by picosecond Raman scattering

International Nuclear Information System (INIS)

Jacob, J.M.; Kim, D.S.; Zhou, J.F.; Song, J.J.

1992-01-01

The initial generation of hot LO phonons by the relaxation of hot carriers in GaAs and Al x Ga 1-x As alloy semiconductors is studied. Within the initial 2ps of photoexcitation, only those electrons originating from the split-off hole bands are found to generate a significant number of I-valley hot phonons when photon energies of 2.33eV are used. A picosecond Raman scattering technique is used to determine the hot phonon occupation number in a series of MBE grown Al x Ga 1-x As samples with 0≤x≤0.39. The Stokes and anti-Stokes lines were measured for both GaAs-like and AlAs-like LO phonon modes to determine their occupation numbers. The authors observe a rapid decrease in the phonon occupation numbers as the aluminum concentration increases beyond x = 0.2. This rapid decrease is explained by considering only those electrons photoexcited from the split-off hole band. Almost all of the electrons originating from the heavy and light-hole bands are shown to quickly transfer and remain in the X and L valleys without generating significant numbers of hot LO phonons during the initial 2ps and at a carrier density of 10 17 cm -3 . A model based upon the instantaneous thermalization of hot electrons photoexcited from the split-off hole bands is used to fit the data. They have obtained very good agreement between experiment and theory. This work provides a clear understanding to the relaxation of Γ valley hot electrons by the generation of hot phonons on subpicosecond and picosecond time scales, which has long standing implications to previous time resolved Raman experiments

Carrier-carrier scattering in the gain dynamics of InxGa1-xAs/AlyGa1-yAs diode lasers

DEFF Research Database (Denmark)

Sanders, Gary D; Sun, C.-K.; Golubovic, B.

1996-01-01

Ultrafast optical nonlinearities in semiconductors play a central role in determining transient amplification and pulse-dependent gain saturation in diode lasers. Both carrier-phonon and carrier-carrier scattering are expected to determine the gain dynamics in these systems. We present a relaxation......-Dirac function where the chemical potential and temperature are self-consistently chosen so that both particle number and energy are conserved in the carrier-carrier scattering process. The relaxation approximation makes the problem an effective one-dimensional problem which can then be solved directly...

Carrier-carrier relaxation kinetics in quantum well semiconductor structures with nonparabolic energy bands

DEFF Research Database (Denmark)

Dery, H.; Tromborg, Bjarne; Eisenstein, G.

2003-01-01

We describe carrier-carrier scattering dynamics in an inverted quantum well structure including the nonparabolic nature of the valance band. A solution of the semiconductor Bloch equations yields strong evidence to a large change in the temporal evolution of the carrier distributions compared to ...

Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots

International Nuclear Information System (INIS)

Norris, T B; Kim, K; Urayama, J; Wu, Z K; Singh, J; Bhattacharya, P K

2005-01-01

We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the dependence of quantum dot carrier dynamics on temperature. At low temperatures and densities, the rates for relaxation between the quantum dot confined states and for capture from the barrier region into the various dot levels could be directly determined. For electron-hole pairs generated directly in the quantum dot excited state, relaxation is dominated by electron-hole scattering, and occurs on a 5 ps time scale. Capture times from the barrier into the quantum dot are of the order of 2 ps (into the excited state) and 10 ps (into the ground state). The phonon bottleneck was clearly observed in low-density capture experiments, and the conditions for its observation (namely, the suppression of electron-hole scattering for nongeminately captured electrons) were determined. As temperature increases beyond about 100 K, the dynamics become dominated by the re-emission of carriers from the lower dot levels, due to the large density of states in the wetting layer and barrier region. Measurements of the gain dynamics show fast (130 fs) gain recovery due to intradot carrier-carrier scattering, and picosecond-scale capture. Direct measurement of the transparency density versus temperature shows the dramatic effect of carrier re-emission for the quantum dots on thermally activated scattering. The carrier dynamics at elevated temperature are thus strongly dominated by the high density of the high energy continuum states relative to the dot confined levels. Deleterious hot carrier effects can be suppressed in quantum dot lasers by resonant tunnelling injection

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

Science.gov (United States)

Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

2017-02-01

Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas

Science.gov (United States)

Margetis, J.; Mosleh, A.; Al-Kabi, S.; Ghetmiri, S. A.; Du, W.; Dou, W.; Benamara, M.; Li, B.; Mortazavi, M.; Naseem, H. A.; Yu, S.-Q.; Tolle, J.

2017-04-01

High quality, thick (up to 1.1 μm), strain relaxed GeSn alloys were grown on Ge-buffered Si (1 0 0) in an ASM Epsilon® chemical vapor deposition system using SnCl4 and low-cost commercial GeH4 precursors. The significance of surface chemistry in regards to growth rate and Sn-incorporation is discussed by comparing growth kinetics data in H2 and N2 carrier gas. The role of carrier gas is also explored in the suppression of Sn surface segregation and evolution of layer composition and strain profiles via secondary ion mass spectrometry and X-ray diffraction. Transmission electron microscopy revealed the spontaneous compositional splitting and formation of a thin intermediate layer in which dislocations are pinned. This intermediate layer enables the growth of a thick, strain relaxed, and defect-free epitaxial layer on its top. Last, we present photoluminescence results which indicate that both N2 and H2 growth methods produce optoelectronic device quality material.

Ab initio study of hot electrons in GaAs

OpenAIRE

Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B.; Louie, Steven G.

2015-01-01

Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation...

All-inorganic perovskite nanocrystal assisted extraction of hot electrons and biexcitons from photoexcited CdTe quantum dots.

Science.gov (United States)

Mondal, Navendu; De, Apurba; Samanta, Anunay

2018-01-03

Excitation of semiconductor quantum dots (QDs) by photons possessing energy higher than the band-gap creates a hot electron-hole pair, which releases its excess energy as waste heat or under certain conditions (when hν > 2E g ) produces multiple excitons. Extraction of these hot carriers and multiple excitons is one of the key strategies for enhancing the efficiency of QD-based photovoltaic devices. However, this is a difficult task as competing carrier cooling and relaxation of multiple excitons (through Auger recombination) are ultrafast processes. Herein, we study the potential of all-inorganic perovskite nanocrystals (NCs) of CsPbX 3 (X = Cl, Br) as harvesters of these short-lived species from photo-excited CdTe QDs. The femtosecond transient absorption measurements show CsPbX 3 mediated extraction of both hot and thermalized electrons of the QDs (under a low pump power) and (under a high pump fluence) extraction of multiple excitons prior to their Auger assisted recombination. A faster timescale of thermalized electron transfer (∼2 ps) and a higher extraction efficiency of hot electrons (∼60%) are observed in the presence of CsPbBr 3 . These observations demonstrate the potential of all-inorganic perovskite NCs in the extraction of these short-lived energy rich species implying that complexes of the QDs and perovskite NCs are better suited for improving the efficiency of QD-sensitized solar cells.

Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

International Nuclear Information System (INIS)

Lei Xiao-Yi; Liu Hong-Xia; Zhang Yue; Ma Xiao-Hua; Hao Yue

2014-01-01

The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET (pMOFET) that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Influence of quasi-bound states on the carrier capture into quantum dots

DEFF Research Database (Denmark)

Magnúsdóttir, Ingibjörg; Uskov, A.; Bischoff, Svend

2002-01-01

An important characteristic of quantum dot (QD) materials is the timescale on which carriers are captured into the dots and relax to their ground state. The properties of devices based on QDs, such as lasers, thus rely on efficient carrier feeding to the active QD states. These processes are beli......An important characteristic of quantum dot (QD) materials is the timescale on which carriers are captured into the dots and relax to their ground state. The properties of devices based on QDs, such as lasers, thus rely on efficient carrier feeding to the active QD states. These processes...... are believed to be mediated by carrier-phonon and carrier-carrier interaction (Auger processes). In systems of higher dimensionality, carrier relaxation via emission of LO (Longitudinal Optical) phonons is dominant. However, due to the discrete QD density of states, this process is often considered impossible...... unless the energy level separation equals the LO phonon energy, leading to a so-called phonon bottleneck. This argument is based on the assumption that the carrier-LO phonon interaction is weak. It was shown that carriers in discrete QD states couple strongly to phonons and that the intersubband...

The causes of relaxation- and hot cracking in the heat-affected zone of 22 NiMoCr 37 and 20 MnMoNi 55

International Nuclear Information System (INIS)

Schellhammer, W.

1977-01-01

Non-destructive and metallographic investigations with a view to relaxation cracking and hot cracking were carried out in 53 component-specific welds with wall thicknesses of 40 to 360 mm and 21 experimental welds with wall thicknesses of 140 to 275 mm of high-temperature, fine-grained structural steel 22 NiMoCr 37 as well as in 27 component-specific welds of high-strength, fine-grained structural steel 20 MnMoNi 55. Non-destructive tests and conventional metallographic analyses by means of transverse structure micrography were unable to give a sufficiently accurate picture of the two types of cracks in the micro- and millimeter range, a 'volumetric' method was employed (tangential structure micrography with stepwise abrasion) which permitted semi-automatic and fast evaluation. The experimental results showed the selective influence of several elements and led to the development of a method to evaluate the cumulative effect of the chemical elements on relaxation cracking and hot cracking by addition of the selective influence. The method gives quantitative data on material optimisation with regard to the reduction of brittle and crack-prone states and confirms the findings of welding simulation tests. (orig./IHOE) 891 IHOE/orig.- 892 HIS [de

Screening in crystalline liquids protects energetic carriers in hybrid perovskites

Science.gov (United States)

Zhu, Haiming; Miyata, Kiyoshi; Fu, Yongping; Wang, Jue; Joshi, Prakriti; Niesner, Daniel; Williams, Kristopher; Jin, Song; Zhu, Xiaoyang

Hybrid lead halide perovskites exhibit carrier properties that resemble those of pristine nonpolar semiconductors despite static and dynamic disorder, but how carriers are protected from efficient scattering with charged defects and optical phonons is unknown. Here, we reveal the carrier protection mechanism by comparing three single-crystal lead bromide perovskites: CH3NH3PbBr3, CH(NH2)2PbBr3, and CsPbBr3. We observed hot fluorescence emission from energetic carriers with 102 picosecond lifetimes in CH3NH3PbBr3 or CH(NH,SUB>2)2PbBr3, but not in CsPbBr3. The hot fluorescence is correlated with liquid-like molecular reorientational motions, suggesting that dynamic screening protects energetic carriers via solvation or large polaron formation on time scales competitive with that of ultrafast cooling. Similar protections likely exist for band-edge carriers. The long-lived energetic carriers may enable hot-carrier solar cells with efficiencies exceeding the Shockley-Queisser limit. This work was supported by U.S. Department of Energy Grant ER46980, National Science Foundation, Grant DMR 1420634 (MRSEC), and Department of Energy Award DE-FG02-09ER46664.

Performance-based standards for South African car-carriers

CSIR Research Space (South Africa)

De Saxe, C

2012-12-01

Full Text Available Until recently, car-carriers in South Africa operated under abnormal load permits allowing a finite relaxation of legal height and length limits. This practice is being phased out, and exemption will only be granted if a car-carrier complies...

Relaxation of a kinetic hole due to carrier-carrier scattering in multisubband single-quantum-well semiconductors

DEFF Research Database (Denmark)

Dery, H.; Tromborg, Bjarne; Eisenstein, G.

2003-01-01

We describe a theoretical model for carrier-carrier scattering in an inverted semiconductor quantum well structure using a multisubband diagram. The model includes all possible nonvanishing interaction terms within the static screening approximation, and it enables one to calculate accurately...

Terahertz carrier dynamics in graphene and graphene nanostructures

DEFF Research Database (Denmark)

Jensen, Søren A.; Turchinovich, Dmitry; Tielrooij, Klaas Jan

2014-01-01

Photoexcited charge carriers in 2D graphene and in 1D graphene nanostructures were studied with optical pump-THz probe spectroscopy. We find efficient hot-carrier multiplication in 2D graphene, and predominantly free carrier early time response in 1D nanostructures. © 2014 OSA....

Synchrotron X-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides

International Nuclear Information System (INIS)

Tanaka, Yuusuke; Tanabe, Akira; Suzuki, Katsumi

1998-01-01

The effects of synchrotron x-ray irradiation on the device characteristics and hot-carrier resistance of n- and p-channel metal oxide semiconductor field effect transistors (MOSFETs) with 4 nm thick gate oxides are investigated. In p-channel MOSFETs, device characteristics were significantly affected by the x-ray irradiation but completely recovered after annealing, while the device characteristics in n-channel MOSFETs were not noticeably affected by the irradiation. This difference appears to be due to a difference in interface-state generation. In p-channel MOSFETs, defects caused by boron-ion penetration through the gate oxides may be sensitive to x-ray irradiation, causing the generation of many interface states. These interface states are completely eliminated after annealing in hydrogen gas. The effects of irradiation on the resistance to hot-carrier degradation in annealed 4 nm thick gate-oxide MOSFETs were negligible even at an x-ray dose of 6,000 mJ/cm 2

Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

International Nuclear Information System (INIS)

Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

2003-01-01

The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors

Science.gov (United States)

Mkhitaryan, V. V.; Dobrovitski, V. V.

2017-06-01

We investigate the role of the nuclear-spin quantum dynamics in hyperfine-induced spin relaxation of hopping carriers in organic semiconductors. The fast-hopping regime, when the carrier spin does not rotate much between subsequent hops, is typical for organic semiconductors possessing long spin coherence times. We consider this regime and focus on a carrier random-walk diffusion in one dimension, where the effect of the nuclear-spin dynamics is expected to be the strongest. Exact numerical simulations of spin systems with up to 25 nuclear spins are performed using the Suzuki-Trotter decomposition of the evolution operator. Larger nuclear-spin systems are modeled utilizing the spin-coherent state P -representation approach developed earlier. We find that the nuclear-spin dynamics strongly influences the carrier spin relaxation at long times. If the random walk is restricted to a small area, it leads to the quenching of carrier spin polarization at a nonzero value at long times. If the random walk is unrestricted, the carrier spin polarization acquires a long-time tail, decaying as 1 /√{t } . Based on the numerical results, we devise a simple formula describing the effect quantitatively.

Ultrafast carrier thermalization and cooling dynamics in few-layer MoS2.

Science.gov (United States)

Nie, Zhaogang; Long, Run; Sun, Linfeng; Huang, Chung-Che; Zhang, Jun; Xiong, Qihua; Hewak, Daniel W; Shen, Zexiang; Prezhdo, Oleg V; Loh, Zhi-Heng

2014-10-28

Femtosecond optical pump-probe spectroscopy with 10 fs visible pulses is employed to elucidate the ultrafast carrier dynamics of few-layer MoS2. A nonthermal carrier distribution is observed immediately following the photoexcitation of the A and B excitonic transitions by the ultrashort, broadband laser pulse. Carrier thermalization occurs within 20 fs and proceeds via both carrier-carrier and carrier-phonon scattering, as evidenced by the observed dependence of the thermalization time on the carrier density and the sample temperature. The n(-0.37 ± 0.03) scaling of the thermalization time with carrier density suggests that equilibration of the nonthermal carrier distribution occurs via non-Markovian quantum kinetics. Subsequent cooling of the hot Fermi-Dirac carrier distribution occurs on the ∼ 0.6 ps time scale via carrier-phonon scattering. Temperature- and fluence-dependence studies reveal the involvement of hot phonons in the carrier cooling process. Nonadiabatic ab initio molecular dynamics simulations, which predict carrier-carrier and carrier-phonon scattering time scales of 40 fs and 0.5 ps, respectively, lend support to the assignment of the observed carrier dynamics.

Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

Science.gov (United States)

Tisdale, William A., III

Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots

Terahertz radiation from accelerating charge carriers in graphene under ultrafast photoexcitation

Science.gov (United States)

Rustagi, Avinash; Stanton, C. J.

2016-11-01

We study the generation of terahertz (THz) radiation from the acceleration of ultrafast photoexcited charge carriers in graphene in the presence of a dc electric field. Our model is based on calculating the transient current density from the time-dependent distribution function which is determined using the Boltzmann transport equation (BTE) within a relaxation time approximation. We include the time-dependent generation of carriers by the pump pulse by solving for the carrier generation rate using the optical Bloch equations in the rotating wave approximation (RWA). The linearly polarized pump pulse generates an anisotropic distribution of photoexcited carriers in the kx-ky plane. The collision integral in the Boltzmann equation includes a term that leads to the thermalization of carriers via carrier-carrier scattering to an effective temperature above the lattice temperature, as well as a cooling term, which leads to energy relaxation via inelastic carrier-phonon scattering. The radiated signal is proportional to the time derivative of the transient current density. In spite of the fact that the magnitude of the velocity is the same for all the carriers in graphene, there is still emitted radiation from the photoexcited charge carriers with frequency components in the THz range due to a change in the direction of velocity of the photoexcited carriers in the external electric field as well as cooling of the photoexcited carriers on a subpicosecond time scale.

Pressure dependence of excited-state charge-carrier dynamics in organolead tribromide perovskites

Science.gov (United States)

Liu, X. C.; Han, J. H.; Zhao, H. F.; Yan, H. C.; Shi, Y.; Jin, M. X.; Liu, C. L.; Ding, D. J.

2018-05-01

Excited-state charge-carrier dynamics governs the performance of organometal trihalide perovskites (OTPs) and is strongly influenced by the crystal structure. Characterizing the excited-state charge-carrier dynamics in OTPs under high pressure is imperative for providing crucial insights into structure-property relations. Here, we conduct in situ high-pressure femtosecond transient absorption spectroscopy experiments to study the excited-state carrier dynamics of CH3NH3PbBr3 (MAPbBr3) under hydrostatic pressure. The results indicate that compression is an effective approach to modulate the carrier dynamics of MAPbBr3. Across each pressure-induced phase, carrier relaxation, phonon scattering, and Auger recombination present different pressure-dependent properties under compression. Responsiveness is attributed to the pressure-induced variation in the lattice structure, which also changes the electronic band structure. Specifically, simultaneous prolongation of carrier relaxation and Auger recombination is achieved in the ambient phase, which is very valuable for excess energy harvesting. Our discussion provides clues for optimizing the photovoltaic performance of OTPs.

Ultrafast carrier dynamics in tetrahedral amorphous carbon: carrier trapping versus electron-hole recombination

International Nuclear Information System (INIS)

Carpene, E; Mancini, E; Dallera, C; Schwen, D; Ronning, C; Silvestri, S De

2007-01-01

We report the investigation of the ultrafast carrier dynamics in thin tetrahedral amorphous carbon films by means of femtosecond time-resolved reflectivity. We estimated the electron-phonon relaxation time of a few hundred femtoseconds and we observed that under low optical excitation photo-generated carriers decay according to two distinct mechanisms attributed to trapping by defect states and direct electron-hole recombination. With high excitation, when photo-carrier and trap densities are comparable, a unique temporal evolution develops, as the time dependence of the trapping process becomes degenerate with the electron-hole recombination. This experimental evidence highlights the role of defects in the ultrafast electronic dynamics and is not specific to this particular form of carbon, but has general validity for amorphous and disordered semiconductors

Reduced white matter MRI transverse relaxation rate in cognitively normal H63D-HFE human carriers and H67D-HFE mice.

Science.gov (United States)

Meadowcroft, Mark D; Wang, Jianli; Purnell, Carson J; Peters, Douglas G; Eslinger, Paul J; Neely, Elizabeth B; Gill, David J; Vasavada, Megha; Ali-Rahmani, Fatima; Yang, Qing X; Connor, James R

2016-12-01

Mutations within the HFE protein gene sequence have been associated with increased risk of developing a number of neurodegenerative disorders. To this effect, an animal model has been created which incorporates the mouse homologue to the human H63D-HFE mutation: the H67D-HFE knock-in mouse. These mice exhibit alterations in iron management proteins, have increased neuronal oxidative stress, and a disruption in cholesterol regulation. However, it remains undetermined how these differences translate to human H63D carriers in regards to white matter (WM) integrity. To this endeavor, MRI transverse relaxation rate (R 2 ) parametrics were employed to test the hypothesis that WM alterations are present in H63D human carriers and are recapitulated in the H67D mice. H63D carriers exhibit widespread reductions in brain R 2 compared to non-carriers within white matter association fibers in the brain. Similar R 2 decreases within white matter tracts were observed in the H67D mouse brain. Additionally, an exacerbation of age-related R 2 decrease is found in the H67D animal model in white matter regions of interest. The decrease in R 2 within white matter tracts of both species is speculated to be multifaceted. The R 2 changes are hypothesized to be due to alterations in axonal biochemical tissue composition. The R 2 changes observed in both the human-H63D and mouse-H67D data suggest that modified white matter myelination is occurring in subjects with HFE mutations, potentially increasing vulnerability to neurodegenerative disorders.

Femtosecond pump-probe studies of phonons and carriers in bismuth under high pressure

International Nuclear Information System (INIS)

Kasami, M.; Ogino, T.; Mishina, T.; Yamamoto, S.; Nakahara, J.

2006-01-01

We investigate the high-pressure phase of Bi under hydrostatic pressure using pump-probe spectroscopy at pressures up to 3.0 GPa, and we observe coherent phonons signal and relaxation signal of photo-excited carriers at Bi(II) and Bi(III) phases. The pressure dependence of the coherent phonons shows that the amplitude of coherent phonons is extremely small and the frequency of coherent phonons changes at high-pressure phases. As results from our experiment, we obtain its frequencies are 2.5 and 2.2 THz at Bi(II) and Bi(III), respectively. Furthermore, photo-excited carrier relaxation indicates drastic changes near 2.5 GPa. Bismuth transforms from semimetal to semiconductor near 2.5 GPa, and band-overlapping between at L-point and at T-point disappears. We consider that the drastic changes of the photo-excited carrier relaxation are strongly correlated with the band-overlapping disappearing

Time Resolved Studies of Carrier Dynamics in III -v Heterojunction Semiconductors.

Science.gov (United States)

Westland, Duncan James

Available from UMI in association with The British Library. Requires signed TDF. Picosecond time-resolution photoluminescence spectroscopy has been used to study transient processes in Ga _{.47}In_{.53 }As/InP multiple quantum wells (MQWs), and in bulk Ga_{.47}In _{.53}As and GaSb. To facilitate the experimental studies, apparatus was constructed to allow the detection of transient luminescence with 3ps time resolution. A frequency upconversion technique was employed. Relaxation of energetic carriers in bulk Ga _{.47}In_{.53 }As by optic phonons has been investigated, and, at carrier densities ~3 times 10^{18}cm ^{-3} is found to be a considerably slower process than simple theory predicts. The discrepancy is resolved by the inclusion of a non-equilibrium population of longitudinal optic phonons in the theoretical description. Slow energy loss is also observed in a 154A MQW under similar conditions, but carriers are found to relax more quickly in a 14A MQW with a comparable repeat period. The theory of non-equilibrium mode occupation is modified to describe the case of a MQW and is found to agree with experiment. Carrier relaxation in GaSb is studied and the importance of occupation of the L _6 conduction band valley in this material is demonstrated. The ambipolar diffusion of a photoexcited carrier plasma through an InP capping layer was investigated using an optical time-of-flight technique. This experiment also enables the efficiency of carrier capture by a Ga _{.47}In_{.53 }As quantum well to be determined. A capture time of 4ps was found.

Heat to electricity conversion by cold carrier emissive energy harvesters

International Nuclear Information System (INIS)

Strandberg, Rune

2015-01-01

This paper suggests a method to convert heat to electricity by the use of devices called cold carrier emissive energy harvesters (cold carrier EEHs). The working principle of such converters is explained and theoretical power densities and efficiencies are calculated for ideal devices. Cold carrier EEHs are based on the same device structure as hot carrier solar cells, but works in an opposite way. Whereas a hot carrier solar cell receives net radiation from the sun and converts some of this radiative heat flow into electricity, a cold carrier EEH sustains a net outflux of radiation to the surroundings while converting some of the energy supplied to it into electricity. It is shown that the most basic type of cold carrier EEHs have the same theoretical efficiency as the ideal emissive energy harvesters described earlier by Byrnes et al. In the present work, it is also shown that if the emission from the cold carrier EEH originates from electron transitions across an energy gap where a difference in the chemical potential of the electrons above and below the energy gap is sustained, power densities slightly higher than those given by Byrnes et al. can be achieved

Ultrafast carrier dynamics of titanic acid nanotubes investigated by transient absorption spectroscopy.

Science.gov (United States)

Wang, Li; Zhao, Hui; Pan, Lin Yun; Weng, Yu Xiang; Nakato, Yoshihiro; Tamai, Naoto

2010-12-01

Carrier dynamics of titanic acid nanotubes (phase of H2Ti2O5.H2O) deposited on a quartz plate was examined by visible/near-IR transient absorption spectroscopy with an ultraviolet excitation. The carrier dynamics of titanic acid nanotubes follows the fast trapping process which attributed to the intrinsic tubular structure, the relaxation of shallow trapped carriers and the recombination as a second-order kinetic process. Transient absorption of titanic acid nanotubes was dominated by the absorption of surface-trapped holes in visible region around 500 nm, which was proved by the faster decay dynamics in the presence of polyvinyl alcohol as a hole-scavenger. However, the slow relaxation of free carriers was much more pronounced in the TiO2 single crystals, as compared with the transient absorption spectra of titanic acid nanotubes under the similar excitation.

Utilizing hot electrons

Energy Technology Data Exchange (ETDEWEB)

Nozik, Arthur J.

2018-03-01

In current solar cells, any photon energy exceeding the semiconductor bandgap is lost before being collected, limiting the cell performance. Hot carrier solar cells could avoid these losses. Now, a detailed experimental study and analysis shows that this strategy could lead to an improvement of the photoconversion efficiency in practice.

Hot Water Bathing Impairs Training Adaptation in Elite Teen Archers.

Science.gov (United States)

Hung, Ta-Cheng; Liao, Yi-Hung; Tsai, Yung-Shen; Ferguson-Stegall, Lisa; Kuo, Chia-Hua; Chen, Chung-Yu

2018-04-30

Despite heat imposes considerable physiological stress to human body, hot water immersion remains as a popular relaxation modality for athletes. Here we examined the lingering effect of hot tub relaxation after training on performance-associated measures and dehydroepiandrosterone sulfate (DHEA-S) in junior archers. Ten national level archers, aged 16.6 ± 0.3 years (M = 8, F = 2), participated in a randomized counter-balanced crossover study after baseline measurements. In particular, half participants were assigned to the hot water immersion (HOT) group, whereas another halves were assigned to the untreated control (CON) group. Crossover trial was conducted following a 2-week washout period. During the HOT trial, participants immersed in hot water for 30 min at 40°C, 1 h after training, twice a week (every 3 days) for 2 weeks. Participants during CON trial sat at the same environment without hot water after training. Performance-associated measures and salivary DHEA-S were determined 3 days after the last HOT session. We found that the HOT intervention significantly decreased shooting performance (CON: -4%; HOT: -22%, P HOT: -16%, P HOT: -60%, P < 0.05) of archers, compared with untreated CON trial. No group differences were found in motor unit recruitment (root mean square electromyography, RMS EMG) of arm muscles during aiming, autonomic nervous activity (sympathetic and vagal powers of heart rate variability, HRV), and plasma cortisol levels after treatments. Our data suggest that physiological adaptation against heat exposure takes away the sources needed for normal training adaptation specific to shooting performance in archers.

Spin dependent transport of hot electrons through ultrathin epitaxial metallic films

Energy Technology Data Exchange (ETDEWEB)

Heindl, Emanuel

2010-06-23

In this work relaxation and transport of hot electrons in thin single crystalline metallic films is investigated by Ballistic Electron Emission Microscopy. The electron mean free paths are determined in an energy interval of 1 to 2 eV above the Fermi level. While fcc Au-films appear to be quite transmissive for hot electrons, the scattering lengths are much shorter for the ferromagnetic alloy FeCo revealing, furthermore, a strong spin asymmetry in hot electron transport. Additional information is gained from temperature dependent studies in combination with golden rule approaches in order to disentangle the impact of several relaxation and transport properties. It is found that bcc Fe-films are much less effective in spin filtering than films made of the FeCo-alloy. (orig.)

Nonequilibrium carrier dynamics in transition metal dichalcogenide semiconductors

Science.gov (United States)

Steinhoff, A.; Florian, M.; Rösner, M.; Lorke, M.; Wehling, T. O.; Gies, C.; Jahnke, F.

2016-09-01

When exploring new materials for their potential in (opto)electronic device applications, it is important to understand the role of various carrier interaction and scattering processes. In atomically thin transition metal dichalcogenide semiconductors, the Coulomb interaction is known to be much stronger than in quantum wells of conventional semiconductors like GaAs, as witnessed by the 50 times larger exciton binding energy. The question arises, whether this directly translates into equivalently faster carrier-carrier Coulomb scattering of excited carriers. Here we show that a combination of ab initio band-structure and many-body theory predicts Coulomb-mediated carrier relaxation on a sub-100 fs time scale for a wide range of excitation densities, which is less than an order of magnitude faster than in quantum wells.

Thermal relaxation of charm in hadronic matter

Energy Technology Data Exchange (ETDEWEB)

He Min, E-mail: mhe@comp.tamu.edu [Cyclotron Institute and Department of Physics and Astronomy, Texas A and M University, College Station, TX 77843 (United States); Fries, Rainer J. [Cyclotron Institute and Department of Physics and Astronomy, Texas A and M University, College Station, TX 77843 (United States); RIKEN/BNL Research Center, Brookhaven National Laboratory, Upton, NY 11973 (United States); Rapp, Ralf [Cyclotron Institute and Department of Physics and Astronomy, Texas A and M University, College Station, TX 77843 (United States)

2011-07-18

The thermal relaxation rate of open-charm (D) mesons in hot and dense hadronic matter is calculated using empirical elastic scattering amplitudes. D-meson interactions with thermal pions are approximated by D{sup *} resonances, while scattering off other hadrons (K, {eta}, {rho}, {omega}, K{sup *}, N, {Delta}) is evaluated using vacuum scattering amplitudes as available in the literature based on effective Lagrangians and constrained by realistic spectroscopy. The thermal relaxation time of D-mesons in a hot {pi} gas is found to be around 25-50 fm/c for temperatures T=150-180 MeV, which reduces to 10-25 fm/c in a hadron-resonance gas. The latter values, argued to be conservative estimates, imply significant modifications of D-meson spectra in heavy-ion collisions. Close to the critical temperature (T{sub c}), the spatial diffusion coefficient (D{sub s}) is surprisingly similar to recent calculations for charm quarks in the Quark-Gluon Plasma using non-perturbative T-matrix interactions. This suggests a possibly continuous minimum structure of D{sub s} around T{sub c}.

Probing ultrafast carrier dynamics, nonlinear absorption

Indian Academy of Sciences (India)

We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time resolved differential reflectivity and transmission spectroscopy at 3.15 eV and 1.57 eV photon energies. The complex behaviour of the ...

Carrier dynamics in graphene. Ultrafast many-particle phenomena

Energy Technology Data Exchange (ETDEWEB)

Malic, E.; Brem, S.; Jago, R. [Department of Physics, Chalmers University of Technology, Goeteborg (Sweden); Winzer, T.; Wendler, F.; Knorr, A. [Institut fuer Theoretische Physik, Technische Universitaet Berlin (Germany); Mittendorff, M.; Koenig-Otto, J.C.; Schneider, H.; Helm, M.; Winnerl, S. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Ploetzing, T.; Neumaier, D. [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany)

2017-11-15

Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Duchenne muscular dystrophy carriers

International Nuclear Information System (INIS)

Matsumura, K.; Nakano, I.

1989-01-01

By means of magnetic resonance imaging (MRI), the proton spin-lattice relaxation times (T1 values) of the skeletal muscles were measured in Duchenne muscular dystrophy (DMD) carriers and normal controls. The bound water fraction (BWF) was calculated from the T1 values obtained, according to the fast proton diffusion model. In the DMD carriers, T1 values of the gluteus maximus and quadriceps femoris muscles were significantly higher, and BWFs of these muscles were significantly lower than in normal control. Degenerative muscular changes accompanied by interstitial edema were presumed responsible for this abnormality. No correlation was observed between the muscle T1 and serum creatine kinase values. The present study showed that MRI could be a useful method for studying the dynamic state of water in both normal and pathological skeletal muscles. Its possible utility for DMD carrier detection was discussed briefly. (orig.)

Carrier Dynamics Analysis in Metal-SemiconductorMetal Device for mid-IR Silicon Photonics

DEFF Research Database (Denmark)

Hui, Alvin Tak Lok; Ding, Yunhong; Hu, Hao

A modelling platform for active carrier removal based on metal-semiconductor-metal structure is reported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist in geometric singularities and curly trajectory of carriers should be considered when accurately estimati...

Carrier dynamics analysis in metal-semiconductor-metal device for mid-IR silicon photonics

DEFF Research Database (Denmark)

Hui, Alvin Tak Lok; Ding, Yunhong; Hu, Hao

2017-01-01

A modelling platform for active carrier removal based on metal-semiconductor-metal structure is reported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist in geometric singularities and curly trajectory of carriers should be considered when accurately estimati...

Ultrafast carrier dynamics in bimetallic nanostructure-enhanced methylammonium lead bromide perovskites.

Science.gov (United States)

Zarick, Holly F; Boulesbaa, Abdelaziz; Puretzky, Alexander A; Talbert, Eric M; DeBra, Zachary R; Soetan, Naiya; Geohegan, David B; Bardhan, Rizia

2017-01-26

In this work, we examine the impact of hybrid bimetallic Au/Ag core/shell nanostructures on the carrier dynamics of methylammonium lead tribromide (MAPbBr 3 ) mesoporous perovskite solar cells (PSCs). Plasmon-enhanced PSCs incorporated with Au/Ag nanostructures demonstrated improved light harvesting and increased power conversion efficiency by 26% relative to reference devices. Two complementary spectral techniques, transient absorption spectroscopy (TAS) and time-resolved photoluminescence (trPL), were employed to gain a mechanistic understanding of plasmonic enhancement processes. TAS revealed a decrease in the photobleach formation time, which suggests that the nanostructures improve hot carrier thermalization to an equilibrium distribution, relieving hot phonon bottleneck in MAPbBr 3 perovskites. TAS also showed a decrease in carrier decay lifetimes, indicating that nanostructures enhance photoinduced carrier generation and promote efficient electron injection into TiO 2 prior to bulk recombination. Furthermore, nanostructure-incorporated perovskite films demonstrated quenching in steady-state PL and decreases in trPL carrier lifetimes, providing further evidence of improved carrier injection in plasmon-enhanced mesoporous PSCs.

Enhanced AC conductivity and dielectric relaxation properties of polypyrrole nanoparticles irradiated with Ni12+ swift heavy ions

International Nuclear Information System (INIS)

Hazarika, J.; Kumar, A.

2014-01-01

In this paper, we report the 160 MeV Ni 12+ swift heavy ions (SHIs) irradiation effects on AC conductivity and dielectric relaxation properties of polypyrrole (PPy) nanoparticles in the frequency range of 42 Hz–5 MHz. Four ion fluences of 5 × 10 10 , 1 × 10 11 , 5 × 10 11 and 1 × 10 12 ions/cm 2 have been used for the irradiation purpose. Transport properties in the pristine and irradiated PPy nanoparticles have been investigated with permittivity and modulus formalisms to study the polarization effects and conductivity relaxation. With increasing ion fluence, the relaxation peak in imaginary modulus (M ″ ) plots shifts toward high frequency suggesting long range motion of the charge carriers. The AC conductivity studies suggest correlated barrier hopping as the dominant transport mechanism. The hopping distance (R ω ) of the charge carriers decreases with increasing the ion fluence. Binding energy (W m ) calculations depict that polarons are the dominant charge carriers

Direct View of Hot Carrier Dynamics in Graphene

DEFF Research Database (Denmark)

Johannsen, Jens Christian; Ulstrup, Søren; Cilento, Federico

2013-01-01

The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before th...

Ultrafast carrier dynamics in bilayer graphene studied by broadband infrared pump-probe spectroscopy

Science.gov (United States)

Limmer, Thomas; da Como, Enrico; Niggebaum, Alexander; Feldmann, Jochen

2010-03-01

Recently, bilayer graphene gained a large interest because of its electrically tunable gap appearing in the middle infrared part of the electromagnetic spectrum. This feature is expected to open a number of applications of bilayer graphene in optoelectronics. In this communication we report on the first pump-probe experiment on a single bilayer flake with an unprecedented probe photon energy interval (0.25 -- 1.3 eV). Single flakes were prepared by mechanical exfoliation of graphite and transferred to calcium fluoride substrates. When illuminated with 800 nm (1.5 eV) pump pulses the induced change in transmission shows an ultrafast saturation of the interband transitions from 1.3 to 0.5 eV. In this energy range the saturation recovery occurs within 3 ps and is consistent with an ultrafast relaxation of hot carriers. Interestingly, we report on the observation of a resonance at 0.4 eV characterized by a longer dynamics. The results are discussed considering many-body interactions.

Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells

International Nuclear Information System (INIS)

Wen, X M; Davis, J A; McDonald, D; Dao, L V; Hannaford, P; Coleman, V A; Tan, H H; Jagadish, C; Koike, K; Sasa, S; Inoue, M; Yano, M

2007-01-01

We have investigated carrier relaxation and exciton recombination dynamics in ZnO/ZnMgO multiple quantum wells using femtosecond pump-probe techniques at room temperature. For a probe energy above the band gap, the hot carriers exhibit an effective relaxation by longitudinal optical phonon scattering with a cooling time of 700-850 fs. By detecting the emission near the band-gap, a longer decay time of a few picoseconds was observed which is attributed to acoustic phonon scattering. As the probe energy is decreased further, the decay time continues to increase due to the transitions of exciton recombination or localized carrier recombination

Application of carrier and plasticizer to improve the dissolution and bioavailability of poorly water-soluble baicalein by hot melt extrusion.

Science.gov (United States)

Zhang, Yilan; Luo, Rui; Chen, Yi; Ke, Xue; Hu, Danrong; Han, Miaomiao

2014-06-01

The objective of this study was to develop a suitable formulation for baicalein (a poorly water-soluble drug exhibiting high melting point) to prepare solid dispersions using hot melt extrusion (HME). Proper carriers and plasticizers were selected by calculating the Hansen solubility parameters, evaluating melting processing condition, and measuring the solubility of obtained melts. The characteristic of solid dispersions prepared by HME was evaluated. The dissolution performance of the extrudates was compared to the pure drug and the physical mixtures. Physicochemical properties of the extrudates were characterized by differential scanning calorimetry (DSC), powder X-ray diffraction (PXRD), and Fourier transform infrared spectroscopy (FTIR). Relative bioavailability after oral administration in beagle dogs was assessed. As a result, Kollidon VA64 and Eudragit EPO were selected as two carriers; Cremophor RH was used as the plasticizer. The dissolution of all the extrudates was significantly improved. DSC and PXRD results suggested that baicalein in the extrudates was amorphous. FTIR spectroscopy revealed the interaction between drug and polymers. After oral administration, the relative bioavailability of solid dispersions with VA64 and EPO was comparative, about 2.4- and 2.9-fold greater compared to the pure drug, respectively.

Enhanced AC conductivity and dielectric relaxation properties of polypyrrole nanoparticles irradiated with Ni{sup 12+} swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

Hazarika, J.; Kumar, A., E-mail: ask@tezu.ernet.in

2014-08-15

In this paper, we report the 160 MeV Ni{sup 12+} swift heavy ions (SHIs) irradiation effects on AC conductivity and dielectric relaxation properties of polypyrrole (PPy) nanoparticles in the frequency range of 42 Hz–5 MHz. Four ion fluences of 5 × 10{sup 10}, 1 × 10{sup 11}, 5 × 10{sup 11} and 1 × 10{sup 12} ions/cm{sup 2} have been used for the irradiation purpose. Transport properties in the pristine and irradiated PPy nanoparticles have been investigated with permittivity and modulus formalisms to study the polarization effects and conductivity relaxation. With increasing ion fluence, the relaxation peak in imaginary modulus (M{sup ″}) plots shifts toward high frequency suggesting long range motion of the charge carriers. The AC conductivity studies suggest correlated barrier hopping as the dominant transport mechanism. The hopping distance (R{sub ω}) of the charge carriers decreases with increasing the ion fluence. Binding energy (W{sub m}) calculations depict that polarons are the dominant charge carriers.

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

Science.gov (United States)

Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

2018-04-01

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs

International Nuclear Information System (INIS)

Lee, Chao-Kuei; Lin, Yuan-Yao; Lin, Sung-Hui; Lin, Gong-Ru; Pan, Ci-Ling

2014-01-01

Chirped pulse controlled carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs are investigated by degenerate pump-probe technique. Varying the chirped condition of excited pulse from negative to positive increases the carrier relaxation time so as to modify the dispersion and reshape current pulse in time domain. The spectral dependence of carrier dynamics is analytically derived and explained by Shockley-Read Hall model. This observation enables the new feasibility of controlling carrier dynamics in ultrafast optical devices via the chirped pulse excitations

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

International Nuclear Information System (INIS)

Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

2016-01-01

This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons

Science.gov (United States)

Rossani, A.

2017-12-01

If electrons (e) and holes (h) in metals or semiconductors are heated to the temperatures T_e and T_h greater than the lattice temperature, the electron-phonon interaction causes energy relaxation. In the non-uniform case a momentum relaxation occurs as well. In view of such an application, a new model, based on an asymptotic procedure for solving the kinetic equations of carriers, phonons, and photons, is proposed, which gives naturally the displaced Maxwellian at the leading order. Several generation-recombination (GR) events occur in bipolar semiconductors. In the presence of photons the most important ones are the radiative GR events, direct, indirect, and exciton-catalyzed. Phonons and photons are treated here as a participating species, with their own equation. All the phonon-photon interactions are accounted for. Moreover, carrier-photon (Compton) interactions are introduced, which make complete the model. After that, balance equations for the electron number, hole number, energy densities, and momentum densities are constructed, which constitute now a system of macroscopic equations for the chemical potentials (carriers), the temperatures (carriers and bosons), and the drift velocities (carriers and bosons). In the drift-diffusion approximation the constitutive laws are derived and the Onsager relations recovered, even in the presence of an external magnetic field.

Dielectric relaxation and ac conductivity behaviour of polyvinyl alcohol–HgSe quantum dot hybrid films

International Nuclear Information System (INIS)

Sinha, Subhojyoti; Chatterjee, Sanat Kumar; Meikap, Ajit Kumar; Ghosh, Jiten

2014-01-01

Here we report a comparative study on the dielectric relaxation and ac conductivity behaviour of pure polyvinyl alcohol (PVA) and PVA–mercury selenide (HgSe) quantum dot hybrid films in the temperature range 298 K ⩽ T ⩽ 420 K and in the frequency range 100 Hz ⩽ f ⩽ 1 MHz. The prepared nanocomposite exhibits a larger dielectric constant as compared to the pure PVA. The real and imaginary parts of the dielectric constants were found to fit appreciably with the modified Cole–Cole equation, from which temperature-dependent values of the relaxation times, free charge carrier conductivity and space charge carrier conductivity were calculated. The relaxation time decreases with the quantum dot's inclusion in the PVA matrix and with an increase in temperature, whereas free charge carrier conductivity and space charge carrier conductivity increases with an increase in temperature. An increase in ac conductivity for the nanocomposites has also been observed, while the charge transport mechanism was found to follow the correlated barrier hopping model in both cases. An easy-path model with a suitable electrical equivalent circuit has been employed to analyse the temperature-dependent impedance spectra. The imaginary part of the complex electric modulus spectra exhibit an asymmetric nature and a non-Debye type of behaviour, which has been elucidated considering a generalized susceptibility function. The electric modulus spectra of the nanocomposite demonstrate a smaller amplitude and broader width, as compared to the pure PVA sample. (paper)

Microscopic study of carrier transport in the organic semiconductor zinc-phthalocyanine

Energy Technology Data Exchange (ETDEWEB)

Duarte, Joao Piroto [ESTeSC, Polytechnic Institute of Coimbra, 3040-854 Coimbra (Portugal); CEMDRX, Physics Department, University of Coimbra, Rua Larga, 3004-516 Coimbra (Portugal); Alberto, Helena Vieira; Vilao, Rui Cesar; Gil, Joao M.; Weidinger, Alois; Campos, Nuno Ayres de [CEMDRX, Physics Department, University of Coimbra, Rua Larga, 3004-516 Coimbra (Portugal)

2010-04-15

Nominally undoped zinc-phthalocyanine (ZnPc) was investigated using Muon Spin Rotation ({mu}SR) to probe microscopic carrier transport properties. The study focused on the relaxation of the positive muon's polarisation produced by spin-flip scattering with charge carriers. An energy of 71(8) meV was found for the temperature activation of carrier jumps, a value that does not match the activation energies known in ZnPc from electrical measurements, and that was attributed to a fast transport component in this material. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Study of conduction mechanisms and relaxation processes in NiCl2-PVA composites

International Nuclear Information System (INIS)

Basha, A.F.; Amin, M.; Abdel Samad, H.A.

1985-07-01

Electric conduction measurements were made at different temperatures and fields on thin films NiCl 2 -PVA composites prepared by casting. The conduction is assumed to be generally ionic in nature and polarization contribution is suggested to operate mainly at higher temperatures. Space-charge limited conduction and relaxation phenomena have been observed. The obtained results made it possible to determine a complete set of conduction parameters including carrier mobility, carrier concentration, traps density, Fermi energy, activation energy, etc. (author)

Photovoltaic Properties and Ultrafast Plasmon Relaxation Dynamics of Diamond-Like Carbon Nanocomposite Films with Embedded Ag Nanoparticles.

Science.gov (United States)

Meškinis, Šarūnas; Peckus, Domantas; Vasiliauskas, Andrius; Čiegis, Arvydas; Gudaitis, Rimantas; Tamulevičius, Tomas; Yaremchuk, Iryna; Tamulevičius, Sigitas

2017-12-01

Ultrafast relaxation dynamics of diamond-like carbon (DLC) films with embedded Ag nanoparticles (DLC:Ag) and photovoltaic properties of heterojunctions consisting of DLC:Ag and crystalline silicon (DLC:Ag/Si) were investigated by means of transient absorption (TAS) spectroscopy and photovoltaic measurements. The heterojunctions using both p type and n type silicon were studied. It was found that TAS spectra of DLC:Ag films were dependent on the used excitation wavelength. At wavelengths where Ag nanoparticles absorbed light most intensively, only DLC signal was registered. This result is in good accordance with an increase of the DLC:Ag/Si heterojunction short circuit current and open circuit voltage with the excitation wavelength in the photovoltaic measurements. The dependence of the TAS spectra of DLC:Ag films and photovoltaic properties of DLC:Ag/Si heterostructures on the excitation wavelength was explained as a result of trapping of the photoexcited hot charge carriers in DLC matrix. The negative photovoltaic effect was observed for DLC:Ag/p-Si heterostructures and positive ("conventional") for DLC:Ag/n-Si ones. It was explained by the excitation of hot plasmonic holes in the Ag nanoparticles embedded into DLC matrix. Some decrease of DLC:Ag/Si heterostructures photovoltage as well as photocurrent with DLC:Ag film thickness was observed, indicating role of the interface in the charge transfer process of photocarriers excited in Ag nanoparticles.

Ignition conditions relaxation for central hot-spot ignition with an ion-electron non-equilibrium model

Science.gov (United States)

Fan, Zhengfeng; Liu, Jie

2016-10-01

We present an ion-electron non-equilibrium model, in which the hot-spot ion temperature is higher than its electron temperature so that the hot-spot nuclear reactions are enhanced while energy leaks are considerably reduced. Theoretical analysis shows that the ignition region would be significantly enlarged in the hot-spot rhoR-T space as compared with the commonly used equilibrium model. Simulations show that shocks could be utilized to create and maintain non-equilibrium conditions within the hot spot, and the hot-spot rhoR requirement is remarkably reduced for achieving self-heating. In NIF high-foot implosions, it is observed that the x-ray enhancement factors are less than unity, which is not self-consistent and is caused by assuming Te =Ti. And from this non-consistency, we could infer that ion-electron non-equilibrium exists in the high-foot implosions and the ion temperature could be 9% larger than the equilibrium temperature.

Penetration length-dependent hot electrons in the field emission from ZnO nanowires

Science.gov (United States)

Chen, Yicong; Song, Xiaomeng; Li, Zhibing; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-01-01

In the framework of field emission, whether or not hot electrons can form in the semiconductor emitters under a surface penetration field is of great concern, which will provide not only a comprehensive physical picture of field emission from semiconductor but also guidance on how to improve device performance. However, apart from some theoretical work, its experimental evidence has not been reported yet. In this article, the field penetration length-dependent hot electrons were observed in the field emission of ZnO nanowires through the in-situ study of its electrical and field emission characteristic before and after NH3 plasma treatment in an ultrahigh vacuum system. After the treatment, most of the nanowires have an increased carrier density but reduced field emission current. The raised carrier density was caused by the increased content of oxygen vacancies, while the degraded field emission current was attributed to the lower kinetic energy of hot electrons caused by the shorter penetration length. All of these results suggest that the field emission properties of ZnO nanowires can be optimized by modifying their carrier density to balance both the kinetic energy of field induced hot electrons and the limitation of saturated current under a given field.

Non-equilibrium between ions and electrons inside hot spots from National Ignition Facility experiments

Directory of Open Access Journals (Sweden)

Zhengfeng Fan

2017-01-01

Full Text Available The non-equilibrium between ions and electrons in the hot spot can relax the ignition conditions in inertial confinement fusion [Fan et al., Phys. Plasmas 23, 010703 (2016], and obvious ion-electron non-equilibrium could be observed by our simulations of high-foot implosions when the ion-electron relaxation is enlarged by a factor of 2. On the other hand, in many shots of high-foot implosions on the National Ignition Facility, the observed X-ray enhancement factors due to ablator mixing into the hot spot are less than unity assuming electrons and ions have the same temperature [Meezan et al., Phys. Plasmas 22, 062703 (2015], which is not self-consistent because it can lead to negative ablator mixing into the hot spot. Actually, this non-consistency implies ion-electron non-equilibrium within the hot spot. From our study, we can infer that ion-electron non-equilibrium exists in high-foot implosions and the ion temperature could be ∼9% larger than the equilibrium temperature in some NIF shots.

Broadband Cooling Spectra of Hot Electrons and Holes in PbSe Quantum Dots

NARCIS (Netherlands)

Spoor, F.C.M.; Tomić, Stanko; Houtepen, A.J.; Siebbeles, L.D.A.

2017-01-01

Understanding cooling of hot charge carriers in semiconductor quantum dots (QDs) is of fundamental interest and useful to enhance the performance of QDs in photovoltaics. We study electron and hole cooling dynamics in PbSe QDs up to high energies where carrier multiplication occurs. We

Limitation and suppression of hot electron fluctuations in submicron semiconductor structures

International Nuclear Information System (INIS)

Kochelap, V.A.; Zahleniuk, N.A.; Sokolov, V.N.

1992-09-01

We present theoretical investigations of fluctuations of hot electrons in submicron active regions, where the dimensions 2 d of the region is comparable to the electron energy relaxation length L ε . The new physical phenomenon is reported; the fluctuations depend on the sample thickness, with 2d ε a suppression of fluctuations arises in the range of fluctuation frequencies ω much less than T -1 ε , T ε is the electron energy relaxation time. (author). 12 refs, 7 figs

Hot electron and hole dynamics in thiol-capped CdSe quantum dots revealed by 2D electronic spectroscopy

Czech Academy of Sciences Publication Activity Database

Lenngren, N.; Abdellah, M.A.; Zheng, K.; Al-Marri, M.J.; Zigmantas, D.; Žídek, Karel; Pullerits, T.

2016-01-01

Roč. 18, č. 37 (2016), s. 26199-26204 ISSN 1463-9076 Institutional support: RVO:61389021 Keywords : quantum dots (QDs) * two-dimesional coherent spectroscopy * carrier relaxation * carrier trapping Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.123, year: 2016

Relaxation of nonthermal hh and lh excitons in ZnSe quantum wells

DEFF Research Database (Denmark)

Kalt, H.; Hoffmann, J.; Umlauff, M.

1998-01-01

The strong exciton-LO phonon coupling in ZnSe QWs gives a direct access to the relaxation dynamics of nonthermal, free heavy-hole and light-hole excitons. Narrow hot-exciton distributions can be generated by LO-phonon assisted exciton formation. The thermalization of these excitons is monitored b...

Confinement sensitivity in quantum dot singlet-triplet relaxation

Science.gov (United States)

Wesslén, C. J.; Lindroth, E.

2017-11-01

Spin-orbit mediated phonon relaxation in a two-dimensional quantum dot is investigated using different confining potentials. Elliptical harmonic oscillator and cylindrical well results are compared to each other in the case of a two-electron GaAs quantum dot subjected to a tilted magnetic field. The lowest energy set of two-body singlet and triplet states are calculated including spin-orbit and magnetic effects. These are used to calculate the phonon induced transition rate from the excited triplet to the ground state singlet for magnetic fields up to where the states cross. The roll of the cubic Dresselhaus effect, which is found to be much more important than previously assumed, and the positioning of ‘spin hot-spots’ are discussed and relaxation rates for a few different systems are exhibited.

Two carrier temperatures non-equilibrium generalized Planck law for semiconductors

Science.gov (United States)

Gibelli, François; Lombez, Laurent; Guillemoles, Jean-François

2016-10-01

Planck's law of radiation describes the light emitted by a blackbody. This law has been generalized in the past for the case of a non-blackbody material having a quasi Fermi-level splitting: the lattice of the material and the carriers are then considered in an isothermal regime. Hot carrier spectroscopy deals with carriers out of the isothermal regime, as their respective temperatures (THe ≠ THh) are considered to be different than that of the lattice (TL). Here we show that Fermi-Dirac distribution temperature for each type of carrier still determine an effective radiation temperature: an explicit relationship is given involving the effective masses. Moreover, we show how to determine, in principle with an additional approximation, the carrier temperatures (THe, THh) and the corresponding absolute electrochemical potentials from photoluminescence measurements.

Ultrafast Physics Behind the Nonradiative Relaxation Process of Chromium Ions in Forsterite Crystals.

Science.gov (United States)

Demos, Stavros Gregorios

The nonradiative relaxation following photoexcitation has been studied in Cr^{4+} -doped forsterite (Mg_2SiO _4) using picosecond laser excitation and ultrasensitive photon counting detection. The experimental techniques utilized were time resolved antiStokes Raman scattering and up-converted hot and ordinary luminescence. The up-converted hot luminescence technique allowed the investigation of the upper state nonradiative relaxation of the excited state manifold of Cr^{4+ }-doped forsterite. The excitation involves the absorption of two photons per photoexcited ion in a two-step absorption. Discrete peaks are observed in the hot up-converted luminescence spectrum and are attributed to the population of nonequilibrium vibronic levels during the deexcitation of the ions by phonon emission. This work reveals that the phonon modes participating in the initial steps of the nonradiative relaxation of the photoexcited ions have energies 218 +/- 20, 325 +/- 20, 365 +/- 20 and 513 +/- 12 cm^ {-1}. The shape of the luminescence spectral envelope suggests two electronic bottlenecks at ~2.1 and ~2.45 eV associated with slower rates of vibrational relaxation at different parts of the excited state manifold. Time resolved measurements indicated that the average time for phonon emission is of the order of hundreds of fs. Information on the nonequilibrium phonon dynamics of the 225, 335 and 370 cm^{-1} modes of forsterite has been obtained using time resolved Raman scattering. Laser pulses of 450 fs in duration and 590 nm in wavelength were used to excite the Cr ions 2.1 eV above the ground state. The probe pulses (obtained from the same laser) are monitoring the nonequilibrium phonon population through the intensity of the antiStokes Raman lines at various pump-probe delay times. Experiments were performed at room and liquid nitrogen temperatures. The observed nonequilibrium phonon populations are associated with the overall complex nonradiative decay following the excitation of

Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

Directory of Open Access Journals (Sweden)

Taylor A.J.

2013-03-01

Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

Photoconductivity relaxation and electron transport in macroporous silicon structures

Directory of Open Access Journals (Sweden)

L.A. Karachevtseva

2017-12-01

Full Text Available Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with the wavelength 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surface barrier on the kinetics of photoconductivity at various temperatures was investigated. The kinetics of photoconductivity distribution in macroporous silicon and Si substrate has been calculated using the finite-difference time-domain method. The maximum of photoconductivity has been found both in the layer of macroporous silicon and in the monocrystalline substrate. The kinetics of photoconductivity distribution in macroporous silicon showed rapid relaxation of the photoconductivity maximum in the layer of macroporous silicon and slow relaxation of it in the monocrystalline substrate.

Contrast visibility for indirect MR arthrography with different protein contents and agent relaxivities at different field strengths: An in vitro model

International Nuclear Information System (INIS)

Nouh, M.R.; Schweitzer, M.E.; Ragatte, Ravinder R.

2011-01-01

Objectives: Protein binding and relaxivity are major determinants of the relative effectiveness of an MR arthrographic contrast agent. We sought to evaluate the optimal concentrations of high and usual relaxivity agents in two different proteinous environments at variable field strength for two MR contrast agents of different relaxivities. Materials and methods: At 1.5, 3.0 and 7.0 T, gadobenate dimeglumine (Multihance) with high-relaxivity in proteinous environment and gadoteridol (Prohance) with more typical behavior were studied at 1.25, 2.5, 5, and 10 mmol in 1.7 g/dL and 3 g/dL albumin (mimicking protein content of normal and inflammatory synovial fluids, respectively) vs. pure normal saline, as a control. Analysis of image signal intensity (SI) and relaxivity values was done. Results: In our study a change in concentration had no significant effect on T1 SI. In contrast, nearly every change in concentration led to a significant change in T2 SI. In 1.25 mmol concentration, there was no effect on T1 SI of either protein concentrations while higher concentrations showed significant decreased SI in either protein carrier compared to saline. The SI of Gadoteridol was significantly higher (p < 0.0001) than that of gadobenate at each of 3 T and 7 T, but was significantly lower (p < 0.001) at 1.5 T in saline solution while this was not significant for either protein carrier. Both protein carriers had significant effect on T1 (p = 0.0124) and T2 (p = 0.0118) relaxivities. Also solution concentration significantly (p < 0.01) affected both T1 and T2 relaxivities. Field strength did not affect T1 relaxivity (p = 0.02511) while it significantly affected T2 relaxivity (p < 0.001). This was significant (p = 0.035) in case of gadoteridol at 3 T. Conclusion: 1.25 mmol concentration of both gadoteridol and gadobenate solutions yields the best diagnostic T1 SI specially in higher fields (3 T and 7 T) and avoid the deleterious effect of increasing concentration on T2 SI

Effect of iodine impurity on relaxation of photoexcited silver chloride

International Nuclear Information System (INIS)

Vostrikova, Yu. V.; Klyuev, V. G.

2008-01-01

The time and temperature dependences of relaxation of excited AgCl and AgCl:I crystals is studied by the method of photostimulated flash of luminescence. The presence of iodine impurity in silver chloride gives rise to hole recombination (luminescence) centers and hole traps in the band gap. It is shown that the main contribution to the decrease in the concentration of electrons localized at deep traps is made by the recombination of electrons with holes released thermally from shallow localization levels (iodine-related centers). Estimation of activation energy for the relaxation process showed that these energies for the AgCl and AgCl:I samples under study are the same within the experimental error and are equal to E rel1 = 0.01 ± 0.0005 eV for the initial stage of relaxation and E rel2 = 0.09 ± 0.005 eV for the final state. This fact indicates that the majority of hole traps involved in the relaxation process in AgCl are related to iodine impurity. In the course of thermal relaxation in AgCl, relocalization of nonequilibrium charge carriers from shallow levels to deep levels is observed. The depth of the corresponding trap is E arl = 0.174 ± 0.03 eV.

Simulation studies on stability of hot electron plasma

International Nuclear Information System (INIS)

Ohsawa, Yukiharu

1985-01-01

Stability of a hot electron plasma in an NBT(EBT)-like geometry is studied by using a 2-1/2 dimensional relativistic, electromagnetic particle code. For the low-frequency hot electron interchange mode, comparison of the simulation results with the analytical predictions of linear stability theory show fairly good agreement with the magnitude of the growth rates calculated without hot electron finite Larmor radius effects. Strong stabilizing effects by finite Larmor radius of the hot electrons are observed for short wavelength modes. As for the high-frequency hot electron interchange mode, there is a discrepancy between the simulation results and the theory. The high-frequency instability is not observed though a parameter regime is chosen in which the high-frequency hot electron interchange mode is theoretically predicted to grow. Strong cross-field diffusion in a poloidal direction of the hot electrons might explain the stability. Each particle has a magnetic drift velocity, and the speed of the magnetic drift is proportional to the kinetic energy of each particle. Hence, if the particles have high temperature, the spread of the magnetic drift velocity is large. This causes a strong cross-field diffusion of the hot electrons. In the simulation for this interchange mode, an enhanced temperature relaxation is observed between the hot and cold electrons although the theoretically predicted high frequency modes are stable. (Nogami, K.)

Spin relaxation rates in quantum dots: Role of the phonon modulated spin orbit interaction

Science.gov (United States)

Alcalde, A. M.; Romano, C. L.; Marques, G. E.

2008-11-01

We calculate the spin relaxation rates in InAs and GaAs parabolic quantum dots due to the interaction of spin carriers with acoustical phonons. We consider a spin relaxation mechanism completely intrinsic to the system, since it is based on the modulation of the spin-orbit interaction by the acoustic phonon potential, which is independent of any structural properties of the confinement potential. The electron-phonon deformation potential and the piezoelectric interaction are described by the Pavlov-Firsov spin-phonon Hamiltonian. Our results demonstrate that, for narrow-gap semiconductors, the deformation potential interaction becomes dominant. This behavior is not observed for wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the relaxation processes. We also demonstrate that the spin relaxation rates are particularly sensitive to values of the Landé g-factor, which depend strongly on the spatial shape of the confinement.

High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

KAUST Repository

Torres, Carlos M.

2015-12-09

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

KAUST Repository

Torres, Carlos M.; Lan, Yann Wen; Zeng, Caifu; Chen, Jyun Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R.; Lerner, Mitchell B.; Zhong, Yuan Liang; Li, Lain-Jong; Chen, Chii Dong; Wang, Kang L.

2015-01-01

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

Equivalent circuit-level model of quantum cascade lasers with integrated hot-electron and hot-phonon effects

Science.gov (United States)

Yousefvand, H. R.

2017-12-01

We report a study of the effects of hot-electron and hot-phonon dynamics on the output characteristics of quantum cascade lasers (QCLs) using an equivalent circuit-level model. The model is developed from the energy balance equation to adopt the electron temperature in the active region levels, the heat transfer equation to include the lattice temperature, the nonequilibrium phonon rate to account for the hot phonon dynamics and simplified two-level rate equations to incorporate the carrier and photon dynamics in the active region. This technique simplifies the description of the electron-phonon interaction in QCLs far from the equilibrium condition. Using the presented model, the steady and transient responses of the QCLs for a wide range of sink temperatures (80 to 320 K) are investigated and analysed. The model enables us to explain the operating characteristics found in QCLs. This predictive model is expected to be applicable to all QCL material systems operating in pulsed and cw regimes.

Auto-correlation of velocity-fluctuations and frequency-dependent diffusion constant for hot electrons

International Nuclear Information System (INIS)

Roy, M.D.; Nag, B.R.

1981-01-01

A method has been developed for determining the auto-correlation functions of the fluctuations in the transverse and the parallel components of hot carrier-velocity in a semiconductor by Monte Carlo simulation. The functions for electrons in InSb are determined by this method for applied electric fields of 50 V/cm, 75 V/cm, and 100 V/cm. With increasing value of the time interval the transverse auto-correlation function fall nearly exponentially to zero, but the parallel function falls sharply to a negative peak, then rises to positive values and finally becomes zero. The interval beyond which the auto-correlation function is zero and the correlation time are also evaluated. The correlation time is found to be approximately 1.6 times the relaxation time calculated from the chord mobility. The effect of the flight sampling time on the value of variance of the displacement, is investigated in terms of the low frequency diffusion constants, determined from the variation of the correlation functions. It is found that the diffusion constants become independent of the sampling time if it is of the order of one hundred times the relaxation time. The frequency-dependent diffusion constants are calculated from the correlation functions. The transverse diffusion constant falls monotonically with frequency for all the field strengths studied. The parallel diffusion constant has similar variation for the lower fields (50 V/cm and 75 V/cm) but it has a peak at about 44 GHz for the field of 100 V/cm. (orig.)

Fatigue life estimation of welded components considering welding residual stress relaxation and its mean stress effect

International Nuclear Information System (INIS)

Han, Seung Ho; Han, Jeong Woo; Shin, Byung Chun; Kim, Jae Hoon

2003-01-01

The fatigue life of welded joints is sensitive to welding residual stress and complexity of their geometric shapes. To predict the fatigue life more reasonably, the effects of welding residual stress and its relaxation on their fatigue strengths should be considered quantitatively, which are often regarded to be equivalent to the effects of mean stresses by external loads. The hot-spot stress concept should be also adopted which can reduce the dependence of fatigue strengths for various welding details. Considering the factors mentioned above, a fatigue life prediction model using the modified Goodman's diagram was proposed. In this model, an equivalent stress was introduced which is composed of the mean stress based on the hot-spot stress concept and the relaxed welding residual stress. From the verification of the proposed model to real welding details, it is proved that this model can be applied to predict reasonably their fatigue lives

Tracking ultrafast relaxation dynamics of furan by femtosecond photoelectron imaging

International Nuclear Information System (INIS)

Liu, Yuzhu; Knopp, Gregor; Qin, Chaochao; Gerber, Thomas

2015-01-01

Graphical abstract: - Highlights: • Relaxation dynamics of furan are tracked by femtosecond photoelectron imaging. • The mechanism for ultrafast formation of α-carbene and β-carbene is proposed. • Ultrafast internal conversion from S 2 to S 1 is observed. • The transient characteristics of the fragment ions are obtained. • Single-color multi-photon ionization dynamics at 800 nm are also studied. - Abstract: Ultrafast internal conversion dynamics of furan has been studied by femtosecond photoelectron imaging (PEI) coupled with photofragmentation (PF) spectroscopy. Photoelectron imaging of single-color multi-photon ionization and two-color pump–probe ionization are obtained and analyzed. Photoelectron bands are assigned to the related states. The time evolution of the photoelectron signal by pump–probe ionization can be well described by a biexponential decay: two rapid relaxation pathways with time constants of ∼15 fs and 85 (±11) fs. The rapid relaxation is ascribed to the ultrafast internal conversion (IC) from the S 2 state to the vibrationally hot S 1 state. The second relaxation process is attributed to the redistributions and depopulation of secondarily populated high vibronic S 1 state and the formation of α-carbene and β-carbene by H immigration. Additionally, the transient characteristics of the fragment ions are also measured and discussed as a complementary understanding

Hot spots and heavily dislocated regions in multicrystalling silicon cells

International Nuclear Information System (INIS)

Simo, A.; Martinuzzi, S.

1990-01-01

The formation mechanism and the electrical consequences of hot spots have been investigated in multicrystalline solar cells. The hot spots were revealed by means of an infrared camera when the cells are reverse biassed in the dark. The minority carrier diffusion length (L n ), the photovoltage (V oc ) and the photocurrent (J sc ) were measured in the hot spot area and far from this zone thanks to mesa diodes. Dark forward I-V curves lead to values of ideality factor (M) and reverse saturation current (J o ). It is found that J o and M are higher in the hot spot area, while J sc , V oc and at a less extent L n are smaller. Large densities of dislocations and lineages structures are revealed in the abnormally heated regions

Ultrafast carrier dynamics in a GaN/Al 0.18Ga0.82N superlattice

Science.gov (United States)

Mahler, Felix; Tomm, Jens W.; Reimann, Klaus; Woerner, Michael; Elsaesser, Thomas; Flytzanis, Christos; Hoffmann, Veit; Weyers, Markus

2018-04-01

Relaxation processes of photoexcited carriers in a GaN /Al0.18Ga0.82N superlattice are studied in femtosecond spectrally resolved reflectivity measurements at ambient temperature. The transient reflectivity reveals electron trapping into defect states close to the conduction-band minimum with a 150-200 fs time constant, followed by few-picosecond carrier cooling. A second slower trapping process into a different manifold of defect states is observed on a time scale of approximately 10 ps. Our results establish the prominent role of structural defects and disorder for ultrafast carrier dynamics in nitride semiconductor structures.

Viscoelastic sliding and diffusive relaxation along grain boundaries in polycrystalline boron nitride

International Nuclear Information System (INIS)

Pezzotti, G.; Nishida, Toshihiko; Kleebe, H.J.; Ota, Kenichi

1997-01-01

Dense hexagonal boron nitride (BN) materials were prepared via two different processing routes: (1) hot-pressing with the addition of a Ca/B-containing glass and (2) chemical vapor deposition (CVD). The resulting microstructure of both materials was studied by scanning and transmission electron microscopy. While the hot-pressed BN material shows, apart from large BN matrix grains, an inhomogeneous distribution of residual glass at room temperature, the CVD deposition yields a homogeneous fine grained microstructure with no amorphous residue detectable. Internal-friction experiments were performed to study the micromechanical response of the materials when exposed to high temperatures. The CVD material revealed no relaxation peak during testing up to 2,300 C, while the glass-doped sample showed a pronounced relaxation peak at a peak-top temperature of about 600 C. This temperature corresponds to the softening temperature known for bulk Ca/B-glasses and it is, therefore, concluded that the glass homogeneously wets the BN grains at elevated temperatures. The results presented are seen as the first clear evidence that the internal friction peak monitored for various glass-containing ceramics is indeed related to a viscous sliding process along grain boundaries

Ultrafast carrier dynamics in band edge and broad deep defect emission ZnSe nanowires

Science.gov (United States)

Othonos, Andreas; Lioudakis, Emmanouil; Philipose, U.; Ruda, Harry E.

2007-12-01

Ultrafast carrier dynamics of ZnSe nanowires grown under different growth conditions have been studied. Transient absorption measurements reveal the dependence of the competing effects of state filling and photoinduced absorption on the probed energy states. The relaxation of the photogenerated carriers occupying defect states in the stoichiometric and Se-rich samples are single exponentials with time constants of 3-4ps. State filling is the main contribution for probe energies below 1.85eV in the Zn-rich grown sample. This ultrafast carrier dynamics study provides an important insight into the role that intrinsic point defects play in the observed photoluminescence from ZnSe nanowires.

Fatigue life estimation considering welding residual stress and hot-spot stress of welded components

International Nuclear Information System (INIS)

Han, S. H.; Lee, T. K.; Shin, B. C.

2002-01-01

The fatigue life of welded joints is sensitive to welding residual stress and complexity of their geometric shapes. To predict the fatigue life more reasonably, the effects of welding residual stress and its relaxation have to be considered quantitatively which are equivalent to mean stress by external loads. The hot-spot stress concept should be also adopted which can be reduce the dependence of fatigue strengths for various welding details. Considering the factors mentioned above, a fatigue life prediction model using the modified Goodman's diagram was proposed. In this model, an equivalent stress was introduced which are composed of the mean stress based on the hot-spot stress concept and the relaxed welding residual stress. From the verification of the proposed model to real welding details, it is confirmed that this model can be applied to predict reasonably their fatigue lives

Resonantly enhanced spin-lattice relaxation of Mn2 + ions in diluted magnetic (Zn,Mn)Se/(Zn,Be)Se quantum wells

Science.gov (United States)

Debus, J.; Ivanov, V. Yu.; Ryabchenko, S. M.; Yakovlev, D. R.; Maksimov, A. A.; Semenov, Yu. G.; Braukmann, D.; Rautert, J.; Löw, U.; Godlewski, M.; Waag, A.; Bayer, M.

2016-05-01

The dynamics of spin-lattice relaxation in the magnetic Mn2 + ion system of (Zn,Mn)Se/(Zn,Be)Se quantum-well structures are studied using optical methods. Pronounced cusps are found in the giant Zeeman shift of the quantum-well exciton photoluminescence at specific magnetic fields below 10 T, when the Mn spin system is heated by photogenerated carriers. The spin-lattice relaxation time of the Mn ions is resonantly accelerated at the cusp magnetic fields. Our theoretical analysis demonstrates that a cusp occurs at a spin-level mixing of single Mn2 + ions and a quick-relaxing cluster of nearest-neighbor Mn ions, which can be described as intrinsic cross-relaxation resonance within the Mn spin system.

Non-hormonal interventions for hot flushes in women with a history of breast cancer

Directory of Open Access Journals (Sweden)

Gabriel Rada

2013-04-01

Full Text Available BACKGROUND Hot flushes are common in women with a history of breast cancer. Hormonal therapies are known to reduce these symptoms but are not recommended in women with a history of breast cancer due to their potential adverse effects. The efficacy of non-hormonal therapies is still uncertain. OBJECTIVE To assess the efficacy of non-hormonal therapies in reducing hot flushes in women with a history of breast cancer. METHODS Search methods: We searched the Cochrane Breast Cancer Group Specialised Register, CENTRAL (The Cochrane Library, Medline, Embase, Lilacs, CINAHL, PsycINFO (August 2008 and WHO ICTRP Search Portal. We handsearched reference lists of reviews and included articles, reviewed conference proceedings and contacted experts. Selection criteria: Randomized controlled trials (RCTs comparing non-hormonal therapies with placebo or no therapy for reducing hot flushes in women with a history of breast cancer. Data collection and analysis: Two authors independently selected potentially relevant studies, decided upon their inclusion and extracted data on participant characteristics, interventions, outcomes and the risk of bias of included studies. MAIN RESULTS Sixteen RCTs met our inclusion criteria. We included six studies on selective serotonin (SSRI and serotonin-norepinephrine (SNRI reuptake inhibitors, two on clonidine, one on gabapentin, two each on relaxation therapy and homeopathy, and one each on vitamin E, magnetic devices and acupuncture. The risk of bias of most studies was rated as low or moderate. Data on continuous outcomes were presented inconsistently among studies, which precluded the possibility of pooling the results. Three pharmacological treatments (SSRIs and SNRIs, clonidine and gabapentin reduced the number and severity of hot flushes. One study assessing vitamin E did not show any beneficial effect. One of two studies on relaxation therapy showed a significant benefit. None of the other non-pharmacological therapies

Non-hormonal interventions for hot flushes in women with a history of breast cancer

Directory of Open Access Journals (Sweden)

Gabriel Rada

Full Text Available BACKGROUND Hot flushes are common in women with a history of breast cancer. Hormonal therapies are known to reduce these symptoms but are not recommended in women with a history of breast cancer due to their potential adverse effects. The efficacy of non-hormonal therapies is still uncertain. OBJECTIVE To assess the efficacy of non-hormonal therapies in reducing hot flushes in women with a history of breast cancer. METHODS Search methods: We searched the Cochrane Breast Cancer Group Specialised Register, CENTRAL (The Cochrane Library, Medline, Embase, Lilacs, CINAHL, PsycINFO (August 2008 and WHO ICTRP Search Portal. We handsearched reference lists of reviews and included articles, reviewed conference proceedings and contacted experts. Selection criteria: Randomized controlled trials (RCTs comparing non-hormonal therapies with placebo or no therapy for reducing hot flushes in women with a history of breast cancer. Data collection and analysis: Two authors independently selected potentially relevant studies, decided upon their inclusion and extracted data on participant characteristics, interventions, outcomes and the risk of bias of included studies. MAIN RESULTS Sixteen RCTs met our inclusion criteria. We included six studies on selective serotonin (SSRI and serotonin-norepinephrine (SNRI reuptake inhibitors, two on clonidine, one on gabapentin, two each on relaxation therapy and homeopathy, and one each on vitamin E, magnetic devices and acupuncture. The risk of bias of most studies was rated as low or moderate. Data on continuous outcomes were presented inconsistently among studies, which precluded the possibility of pooling the results. Three pharmacological treatments (SSRIs and SNRIs, clonidine and gabapentin reduced the number and severity of hot flushes. One study assessing vitamin E did not show any beneficial effect. One of two studies on relaxation therapy showed a significant benefit. None of the other non-pharmacological therapies

Hot Hole Collection and Photoelectrochemical CO2 Reduction with Plasmonic Au/p-GaN Photocathodes.

Science.gov (United States)

DuChene, Joseph S; Tagliabue, Giulia; Welch, Alex J; Cheng, Wen-Hui; Atwater, Harry A

2018-04-11

Harvesting nonequilibrium hot carriers from plasmonic-metal nanostructures offers unique opportunities for driving photochemical reactions at the nanoscale. Despite numerous examples of hot electron-driven processes, the realization of plasmonic systems capable of harvesting hot holes from metal nanostructures has eluded the nascent field of plasmonic photocatalysis. Here, we fabricate gold/p-type gallium nitride (Au/p-GaN) Schottky junctions tailored for photoelectrochemical studies of plasmon-induced hot-hole capture and conversion. Despite the presence of an interfacial Schottky barrier to hot-hole injection of more than 1 eV across the Au/p-GaN heterojunction, plasmonic Au/p-GaN photocathodes exhibit photoelectrochemical properties consistent with the injection of hot holes from Au nanoparticles into p-GaN upon plasmon excitation. The photocurrent action spectrum of the plasmonic photocathodes faithfully follows the surface plasmon resonance absorption spectrum of the Au nanoparticles and open-circuit voltage studies demonstrate a sustained photovoltage during plasmon excitation. Comparison with Ohmic Au/p-NiO heterojunctions confirms that the vast majority of hot holes generated via interband transitions in Au are sufficiently hot to inject above the 1.1 eV interfacial Schottky barrier at the Au/p-GaN heterojunction. We further investigated plasmon-driven photoelectrochemical CO 2 reduction with the Au/p-GaN photocathodes and observed improved selectivity for CO production over H 2 evolution in aqueous electrolytes. Taken together, our results offer experimental validation of photoexcited hot holes more than 1 eV below the Au Fermi level and demonstrate a photoelectrochemical platform for harvesting hot carriers to drive solar-to-fuel energy conversion.

Hot exciton relaxation in multiple layers CdSe/ZnSe self-assembled quantum dots separated by thick ZnSe barriers

International Nuclear Information System (INIS)

Eremenko, M; Budkin, G; Reznitsky, A

2015-01-01

We have studied PL and PLE spectra of two samples (A and B) of MBE grown CdSe/ZnSe asymmetric double quantum wells with different amount of deposited CdSe layers separated by 14 nm ZnSe barrier. It has been found that PLE spectra of the states forming short wavelength side of the PL spectra of both deep and shallow QWs of the sample A as well as that of deep QW of the sample B demonstrate oscillating structure in the spectral ranges corresponding to exciton states of self-assembled quantum dots only. Meanwhile PLE spectra of the short wavelength states of shallow QW the sample B revealed pronounced oscillating structure with energy period of ZnSe LO phonon under excitation with photons in a wide energy range both in the regions of quantum-dot states and in that of free states in the ZnSe barrier. In these spectra creating of excitons with kinetic energies more than 0.3 eV was observed which considerably exceed the exciton binding energy as well as LO phonon energy (both appr. 0.03 eV). It has been concluded that oscillating structure of the PLE spectra arises due to cascade relaxation of hot excitons. We discuss the model which explains these experimental findings. (paper)

Hot exciton relaxation in multiple layers CdSe/ZnSe self-assembled quantum dots separated by thick ZnSe barriers

Science.gov (United States)

Eremenko, M.; Budkin, G.; Reznitsky, A.

2015-11-01

We have studied PL and PLE spectra of two samples (A and B) of MBE grown CdSe/ZnSe asymmetric double quantum wells with different amount of deposited CdSe layers separated by 14 nm ZnSe barrier. It has been found that PLE spectra of the states forming short wavelength side of the PL spectra of both deep and shallow QWs of the sample A as well as that of deep QW of the sample B demonstrate oscillating structure in the spectral ranges corresponding to exciton states of self-assembled quantum dots only. Meanwhile PLE spectra of the short wavelength states of shallow QW the sample B revealed pronounced oscillating structure with energy period of ZnSe LO phonon under excitation with photons in a wide energy range both in the regions of quantum-dot states and in that of free states in the ZnSe barrier. In these spectra creating of excitons with kinetic energies more than 0.3 eV was observed which considerably exceed the exciton binding energy as well as LO phonon energy (both appr. 0.03 eV). It has been concluded that oscillating structure of the PLE spectra arises due to cascade relaxation of hot excitons. We discuss the model which explains these experimental findings.

Kinetics of photo-activated charge carriers in Sn:CdS

Energy Technology Data Exchange (ETDEWEB)

Patidar, Manju Mishra, E-mail: manjumishra.iuc@gmail.com; Gorli, V. R.; Gangrade, Mohan; Nath, R.; Ganesan, V. [UGC-DAE CSR, University Campus, Khandwa Road, Indore (M.P.)-452001 (India); Panda, Richa [S.S. Jain Subodh Girls College, Airport Road Sanganer, Jaipur - 302029 (India)

2016-05-23

Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd{sub 1-x}Sn{sub x}S (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ{sub 1}, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections

Science.gov (United States)

Barmparis, Georgios D.; Puzyrev, Yevgeniy S.; Zhang, X.-G.; Pantelides, Sokrates T.

2015-12-01

Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major issue in the performance of solar cells and light-emitting diodes. A theory of nonradiative (multiphonon) inelastic scattering by defects, however, is nonexistent, while the theory for carrier capture by defects has had a long and arduous history. Here we report the construction of a comprehensive theory of inelastic scattering by defects, with carrier capture being a special case. We distinguish between capture under thermal equilibrium conditions and capture under nonequilibrium conditions, e.g., in the presence of an electrical current or hot carriers where carriers undergo scattering by defects and are described by a mean free path. In the thermal-equilibrium case, capture is mediated by a nonadiabatic perturbation Hamiltonian, originally identified by Huang and Rhys and by Kubo, which is equal to linear electron-phonon coupling to first order. In the nonequilibrium case, we demonstrate that the primary capture mechanism is within the Born-Oppenheimer approximation (adiabatic transitions), with coupling to the defect potential inducing Franck-Condon electronic transitions, followed by multiphonon dissipation of the transition energy, while the nonadiabatic terms are of secondary importance (they scale with the inverse of the mass of typical atoms in the defect complex). We report first-principles density-functional-theory calculations of the capture cross section for a prototype defect using the projector-augmented wave, which allows us to employ all-electron wave functions. We adopt a Monte Carlo scheme to sample multiphonon configurations and obtain converged results. The theory and the results represent a foundation upon which to build engineering-level models for hot-electron degradation of power devices and the performance

Ultrafast Relaxation Dynamics of the Optical Nonlinearity in Nanometric Gold Particles

International Nuclear Information System (INIS)

Puech, K.; Blau, W.J.

2001-01-01

Measurements of the resonantly enhanced, third-order nonlinear optical properties of gold nanostructures exhibiting reduced charge-carrier mobility in three dimensions were performed with a number of ultrafast nonlinear optical techniques. The size of the particles investigated was varied between 5 and 40 nm. The magnitude of the nonlinear susceptibility is of the order of 5.10 -16 m 2 V -2 at resonance and an order of magnitude lower off-resonance. The response time of the nonlinearity is found to be extremely fast and could not be resolved in the experiments undertaken here. The only statement that can be made in this regard is that the phase relaxation time is of the order of or less than 20 fs while the energy relaxation time is of the order of or less than 75 fs

Delayed electron relaxation in CdTe nanorods studied by spectral analysis of the ultrafast transient absorption

International Nuclear Information System (INIS)

Kriegel, I.; Scotognella, F.; Soavi, G.; Brescia, R.; Rodríguez-Fernández, J.; Feldmann, J.; Lanzani, G.; Tassone, F.

2016-01-01

Highlights: • We study the photophysics of CdTe nanorods by ultrafast absorption spectroscopy. • We fit photobleaching and photoinduced absorption features at all time delays. • Dynamics are extracted from superpositions of bleaches (Gaussians) and derivatives. • Fast non-radiative recombination and slower hole trapping processes are extracted. • A potential approach to unveil ultrafast non-radiative recombination processes. - Abstract: In transient absorption (TA) spectra, the bleach features originating from state filling are overlapped by their energy-shifted derivatives, arising from excited state energy level shifts. This makes the direct extraction of carrier dynamics from a single-wavelength time-trace misleading. Fitting TA spectra in time, as Gaussian functions and their derivative-like shifted Gaussians, allows to individually extract the real dynamics of both photobleached transitions, and their energy shifts. In CdTe nanorods (NRs) we found a delayed heating of holes due to the release of the large excess energy in the electron relaxation process. The slow hole-trapping process is consistent with a high number of surface trap states in these model NRs. Our results show that only a correct disentanglement of bleaching and energy shift contributions provides a reliable framework to extract the underlying carrier relaxation dynamics, including trapping, non-radiative recombination, and eventually carrier multiplication.

Delayed electron relaxation in CdTe nanorods studied by spectral analysis of the ultrafast transient absorption

Energy Technology Data Exchange (ETDEWEB)

Kriegel, I., E-mail: ilka.kriegel@iit.it [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Scotognella, F. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy); Soavi, G. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Brescia, R. [Department of Nanochemistry, Istituto Italiano di Tecnologia (IIT), via Morego 30, 16163 Genova (Italy); Rodríguez-Fernández, J.; Feldmann, J. [Photonics and Optoelectronics Group, Department of Physics and CeNS, Ludwig-Maximilians-Universität München, Amalienstr. 54, 80799 Munich (Germany); Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 Munich (Germany); Lanzani, G., E-mail: guglielmo.lanzani@iit.it [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy); Tassone, F. [CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy)

2016-06-01

Highlights: • We study the photophysics of CdTe nanorods by ultrafast absorption spectroscopy. • We fit photobleaching and photoinduced absorption features at all time delays. • Dynamics are extracted from superpositions of bleaches (Gaussians) and derivatives. • Fast non-radiative recombination and slower hole trapping processes are extracted. • A potential approach to unveil ultrafast non-radiative recombination processes. - Abstract: In transient absorption (TA) spectra, the bleach features originating from state filling are overlapped by their energy-shifted derivatives, arising from excited state energy level shifts. This makes the direct extraction of carrier dynamics from a single-wavelength time-trace misleading. Fitting TA spectra in time, as Gaussian functions and their derivative-like shifted Gaussians, allows to individually extract the real dynamics of both photobleached transitions, and their energy shifts. In CdTe nanorods (NRs) we found a delayed heating of holes due to the release of the large excess energy in the electron relaxation process. The slow hole-trapping process is consistent with a high number of surface trap states in these model NRs. Our results show that only a correct disentanglement of bleaching and energy shift contributions provides a reliable framework to extract the underlying carrier relaxation dynamics, including trapping, non-radiative recombination, and eventually carrier multiplication.

Ultrafast carrier thermalization in lead iodide perovskite probed with two-dimensional electronic spectroscopy.

Science.gov (United States)

Richter, Johannes M; Branchi, Federico; Valduga de Almeida Camargo, Franco; Zhao, Baodan; Friend, Richard H; Cerullo, Giulio; Deschler, Felix

2017-08-29

In band-like semiconductors, charge carriers form a thermal energy distribution rapidly after optical excitation. In hybrid perovskites, the cooling of such thermal carrier distributions occurs on timescales of about 300 fs via carrier-phonon scattering. However, the initial build-up of the thermal distribution proved difficult to resolve with pump-probe techniques due to the requirement of high resolution, both in time and pump energy. Here, we use two-dimensional electronic spectroscopy with sub-10 fs resolution to directly observe the carrier interactions that lead to a thermal carrier distribution. We find that thermalization occurs dominantly via carrier-carrier scattering under the investigated fluences and report the dependence of carrier scattering rates on excess energy and carrier density. We extract characteristic carrier thermalization times from below 10 to 85 fs. These values allow for mobilities of 500 cm 2  V -1  s -1 at carrier densities lower than 2 × 10 19  cm -3 and limit the time for carrier extraction in hot carrier solar cells.Carrier-carrier scattering rates determine the fundamental limits of carrier transport and electronic coherence. Using two-dimensional electronic spectroscopy with sub-10 fs resolution, Richter and Branchi et al. extract carrier thermalization times of 10 to 85 fs in hybrid perovskites.

Birth, life and death of hot nuclei

International Nuclear Information System (INIS)

Suraud, E.; Tamain, B.; Gregoire, C.

1989-01-01

Intermediate energy heavy-ions (10-100 MeV/u) are the most powerful tool to study hot nuclear matter properties. In this paper we give a review of experimental and theoretical works which support this statement. The first challenge is to achieve hot nuclei formation. The second one is to study their properties. The formation step is governed by the relative influence of nucleon-nucleon collisions and mean field effects. Fundamental quantities such as excited matter decay time, thermalization time, relaxation time for collective modes are of major importance and are compared with typical collision times. It appears that semi-classical theories are able to give a reasonable description of the collision and that they are a good guide for defining further experiments. We show how it has been possible to experimentally establish that very hot equilibrated nuclei are really formed. Their decay properties are not basically different from decay properties at lower bombarding energy. However specific channels are open: in that sense, we take stock of the multifragmentation process. Moreover, compression effects may be an important feature of this energy range. Future studies will involve heavier projectiles around 30-50 MeV/u. They will be the best probe for hot and compressed nuclear matter studies

Tracking ultrafast relaxation dynamics of furan by femtosecond photoelectron imaging

Energy Technology Data Exchange (ETDEWEB)

Liu, Yuzhu, E-mail: yuzhu.liu@gmail.com [School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Knopp, Gregor [Paul Scherrer Institute, Villigen 5232 (Switzerland); Qin, Chaochao [Department of Physics, Henan Normal University, Xinxiang 453007 (China); Gerber, Thomas [Paul Scherrer Institute, Villigen 5232 (Switzerland)

2015-01-13

Graphical abstract: - Highlights: • Relaxation dynamics of furan are tracked by femtosecond photoelectron imaging. • The mechanism for ultrafast formation of α-carbene and β-carbene is proposed. • Ultrafast internal conversion from S{sub 2} to S{sub 1} is observed. • The transient characteristics of the fragment ions are obtained. • Single-color multi-photon ionization dynamics at 800 nm are also studied. - Abstract: Ultrafast internal conversion dynamics of furan has been studied by femtosecond photoelectron imaging (PEI) coupled with photofragmentation (PF) spectroscopy. Photoelectron imaging of single-color multi-photon ionization and two-color pump–probe ionization are obtained and analyzed. Photoelectron bands are assigned to the related states. The time evolution of the photoelectron signal by pump–probe ionization can be well described by a biexponential decay: two rapid relaxation pathways with time constants of ∼15 fs and 85 (±11) fs. The rapid relaxation is ascribed to the ultrafast internal conversion (IC) from the S{sub 2} state to the vibrationally hot S{sub 1} state. The second relaxation process is attributed to the redistributions and depopulation of secondarily populated high vibronic S{sub 1} state and the formation of α-carbene and β-carbene by H immigration. Additionally, the transient characteristics of the fragment ions are also measured and discussed as a complementary understanding.

Non-equilibrium between ions and electrons inside hot spots from National Ignition Facility experiments

OpenAIRE

Zhengfeng Fan; Yuanyuan Liu; Bin Liu; Chengxin Yu; Ke Lan; Jie Liu

2017-01-01

The non-equilibrium between ions and electrons in the hot spot can relax the ignition conditions in inertial confinement fusion [Fan et al., Phys. Plasmas 23, 010703 (2016)], and obvious ion-electron non-equilibrium could be observed by our simulations of high-foot implosions when the ion-electron relaxation is enlarged by a factor of 2. On the other hand, in many shots of high-foot implosions on the National Ignition Facility, the observed X-ray enhancement factors due to ablator mixing into...

Sound modes in hot nuclear matter

International Nuclear Information System (INIS)

Kolomietz, V. M.; Shlomo, S.

2001-01-01

The propagation of the isoscalar and isovector sound modes in a hot nuclear matter is considered. The approach is based on the collisional kinetic theory and takes into account the temperature and memory effects. It is shown that the sound velocity and the attenuation coefficient are significantly influenced by the Fermi surface distortion (FSD). The corresponding influence is much stronger for the isoscalar mode than for the isovector one. The memory effects cause a nonmonotonous behavior of the attenuation coefficient as a function of the relaxation time leading to a zero-to-first sound transition with increasing temperature. The mixing of both the isoscalar and the isovector sound modes in an asymmetric nuclear matter is evaluated. The condition for the bulk instability and the instability growth rate in the presence of the memory effects is studied. It is shown that both the FSD and the relaxation processes lead to a shift of the maximum of the instability growth rate to the longer-wavelength region

Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

Science.gov (United States)

Chen, Ke; Roy, Anupam; Rai, Amritesh; Movva, Hema C. P.; Meng, Xianghai; He, Feng; Banerjee, Sanjay K.; Wang, Yaguo

2018-05-01

Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated the effect of grain boundary/edge defects on the ultrafast dynamics of photoexcited carrier in molecular beam epitaxy (MBE)-grown MoTe2 and MoSe2. We found that, comparing with exfoliated samples, the carrier recombination rate in MBE-grown samples accelerates by about 50 times. We attribute this striking difference to the existence of abundant grain boundary/edge defects in MBE-grown samples, which can serve as effective recombination centers for the photoexcited carriers. We also observed coherent acoustic phonons in both exfoliated and MBE-grown MoTe2, indicating strong electron-phonon coupling in this materials. Our measured sound velocity agrees well with the previously reported result of theoretical calculation. Our findings provide a useful reference for the fundamental parameters: carrier lifetime and sound velocity and reveal the undiscovered carrier recombination effect of grain boundary/edge defects, both of which will facilitate the defect engineering in TMD materials for high speed opto-electronics.

Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

Directory of Open Access Journals (Sweden)

Ke Chen

2018-05-01

Full Text Available Defect-carrier interaction in transition metal dichalcogenides (TMDs plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated the effect of grain boundary/edge defects on the ultrafast dynamics of photoexcited carrier in molecular beam epitaxy (MBE-grown MoTe2 and MoSe2. We found that, comparing with exfoliated samples, the carrier recombination rate in MBE-grown samples accelerates by about 50 times. We attribute this striking difference to the existence of abundant grain boundary/edge defects in MBE-grown samples, which can serve as effective recombination centers for the photoexcited carriers. We also observed coherent acoustic phonons in both exfoliated and MBE-grown MoTe2, indicating strong electron-phonon coupling in this materials. Our measured sound velocity agrees well with the previously reported result of theoretical calculation. Our findings provide a useful reference for the fundamental parameters: carrier lifetime and sound velocity and reveal the undiscovered carrier recombination effect of grain boundary/edge defects, both of which will facilitate the defect engineering in TMD materials for high speed opto-electronics.

Variational formulation of relaxed and multi-region relaxed magnetohydrodynamics

Science.gov (United States)

Dewar, R. L.; Yoshida, Z.; Bhattacharjee, A.; Hudson, S. R.

2015-12-01

> Ideal magnetohydrodynamics (IMHD) is strongly constrained by an infinite number of microscopic constraints expressing mass, entropy and magnetic flux conservation in each infinitesimal fluid element, the latter preventing magnetic reconnection. By contrast, in the Taylor relaxation model for formation of macroscopically self-organized plasma equilibrium states, all these constraints are relaxed save for the global magnetic fluxes and helicity. A Lagrangian variational principle is presented that leads to a new, fully dynamical, relaxed magnetohydrodynamics (RxMHD), such that all static solutions are Taylor states but also allows state with flow. By postulating that some long-lived macroscopic current sheets can act as barriers to relaxation, separating the plasma into multiple relaxation regions, a further generalization, multi-region relaxed magnetohydrodynamics (MRxMHD) is developed.

Spin Relaxation in III-V Semiconductors in various systems: Contribution of Electron-Electron Interaction

Science.gov (United States)

Dogan, Fatih; Kesserwan, Hasan; Manchon, Aurelien

2015-03-01

In spintronics, most of the phenomena that we are interested happen at very fast time scales and are rich in structure in time domain. Our understanding, on the other hand, is mostly based on energy domain calculations. Many of the theoretical tools use approximations and simplifications that can be perceived as oversimplifications. We compare the structure, material, carrier density and temperature dependence of spin relaxation time in n-doped III-V semiconductors using Elliot-Yafet (EY) and D'yakanov-Perel'(DP) with real time analysis using kinetic spin Bloch equations (KSBE). The EY and DP theories fail to capture details as the system investigated is varied. KSBE, on the other hand, incorporates all relaxation sources as well as electron-electron interaction which modifies the spin relaxation time in a non-linear way. Since el-el interaction is very fast (~ fs) and spin-conserving, it is usually ignored in the analysis of spin relaxation. Our results indicate that electron-electron interaction cannot be neglected and its interplay with the other (spin and momentum) relaxation mechanisms (electron-impurity and electron-phonon scattering) dramatically alters the resulting spin dynamics. We use each interaction explicitly to investigate how, in the presence of others, each relaxation source behaves. We use GaAs and GaN for zinc-blend structure, and GaN and AlN for the wurtzite structure.

Optimization of carrier multiplication for more effcient solar cells: the case of Sn quantum dots.

Science.gov (United States)

Allan, Guy; Delerue, Christophe

2011-09-27

We present calculations of impact ionization rates, carrier multiplication yields, and solar-power conversion efficiencies in solar cells based on quantum dots (QDs) of a semimetal, α-Sn. Using these results and previous ones on PbSe and PbS QDs, we discuss a strategy to select QDs with the highest carrier multiplication rate for more efficient solar cells. We suggest using QDs of materials with a close to zero band gap and a high multiplicity of the bands in order to favor the relaxation of photoexcited carriers by impact ionization. Even in that case, the improvement of the maximum solar-power conversion efficiency appears to be a challenging task. © 2011 American Chemical Society

Effect of Au{sup 8+} irradiation on Ni/n-GaP Schottky diode: Its influence on interface state density and relaxation time

Energy Technology Data Exchange (ETDEWEB)

Shiwakoti, N.; Bobby, A. [Department of Applied Physics, Indian Institute of Technology (ISM) Dhanbad, Jharkhand 826004 (India); Asokan, K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Antony, Bobby, E-mail: bka.ism@gmail.com [Department of Applied Physics, Indian Institute of Technology (ISM) Dhanbad, Jharkhand 826004 (India)

2017-01-01

The in-situ capacitance-frequency and conductance-frequency measurements of 100 MeV Au{sup 8+} swift heavy ion irradiated Ni/n-GaP Schottky structure at a constant bias voltage have been carried out in the frequency range 1 kHz–1 MHz at room temperature. The interface states density and the relaxation time of the charge carriers have been calculated from Nicollian and Brews method. Various dielectric parameters such as dielectric constant, dielectric loss, loss tangent, series resistance, ac conductivity, real and imaginary parts of electric modulus have been extracted and analyzed under complex permittivity and complex electric modulus formalisms. The capacitance and conductance characteristics are found to exhibit complex behaviors at lower frequency region (1–20 kHz) for all the samples. The observed peaks and dips at low frequency region are attributed to the relaxation mechanisms of charge carriers and the interface or dipolar polarization at the interface. The dielectric properties are found to be effectively changed by the ion fluence which is attributed to the variation in interface states density and their relaxation time.

Dual-mode operation of 2D material-base hot electron transistors

KAUST Repository

Lan, Yann-Wen; Jr., Carlos M. Torres,; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R.; Lerner, Mitchell B.; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L.

2016-01-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V-CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (V-CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Dual-mode operation of 2D material-base hot electron transistors

KAUST Repository

Lan, Yann-Wen

2016-09-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V-CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (V-CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium

Energy Technology Data Exchange (ETDEWEB)

Dominici, Stefano [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary' s Street, Boston, Massachusetts 02215 (United States); Wen, Hanqing; Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary' s Street, Boston, Massachusetts 02215 (United States); Bertazzi, Francesco; Goano, Michele [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); IEIIT-CNR, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy)

2016-05-23

The potential applications of germanium and its alloys in infrared silicon-based photonics have led to a renewed interest in their optical properties. In this letter, we report on the numerical determination of Auger coefficients at T = 300 K for relaxed and biaxially strained germanium. We use a Green's function based model that takes into account all relevant direct and phonon-assisted processes and perform calculations up to a strain level corresponding to the transition from indirect to direct energy gap. We have considered excess carrier concentrations ranging from 10{sup 16} cm{sup −3} to 5 × 10{sup 19} cm{sup −3}. For use in device level simulations, we also provide fitting formulas for the calculated electron and hole Auger coefficients as functions of carrier density.

Proposal of a broadband, polarization-insensitive and high-efficiency hot-carrier schottky photodetector integrated with a plasmonic silicon ridge waveguide

International Nuclear Information System (INIS)

Yang, Liu; Kou, Pengfei; Shen, Jianqi; Lee, El Hang; He, Sailing

2015-01-01

We propose a broadband, polarization-insensitive and high-efficiency plasmonic Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission (IPE). The distinctive features of this design are that it has a gold film covering both the top and the sidewalls of a dielectric silicon ridge waveguide with the Schottky contact formed at the gold–silicon interface and the sidewall coverage of gold can be easily tuned by an insulating layer. An extensive physical model on IPE of hot carriers is presented in detail and is applied to calculate and examine the performance of this detector. In comparison with a diode having only the top gold contact, the polarization sensitivity of the responsivity is greatly minimized in our photodetector with gold film covering both the top and the sidewall. Much higher responsivities for both polarizations are also achieved over a broad wavelength range of 1.2–1.6 μm. Moreover, the Schottky contact is only 4 μm long, leading to a very small dark current. Our design is very promising for practical applications in high-density silicon photonic integration. (paper)

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

DEFF Research Database (Denmark)

Borri, Paola; Langbein, Wolfgang Werner; Hvam, Jørn Märcher

2000-01-01

recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH......The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast...

Strain relaxation and ambipolar electrical transport in GaAs/InSb core-shell nanowires.

Science.gov (United States)

Rieger, Torsten; Zellekens, Patrick; Demarina, Natalia; Hassan, Ali Al; Hackemüller, Franz Josef; Lüth, Hans; Pietsch, Ullrich; Schäpers, Thomas; Grützmacher, Detlev; Lepsa, Mihail Ion

2017-11-30

The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core-shell nanowires grown using molecular beam epitaxy are investigated. Due to the large lattice mismatch between GaAs and InSb of 14%, a transition from island-based to layer-like growth occurs during the formation of the shell. High resolution transmission electron microscopy in combination with geometric phase analyses as well as X-ray diffraction with synchrotron radiation are used to investigate the strain relaxation and prove the existence of different dislocations relaxing the strain on zinc blende and wurtzite core-shell nanowire segments. While on the wurtzite phase only Frank partial dislocations are found, the strain on the zinc blende phase is relaxed by dislocations with perfect, Shockley partial and Frank partial dislocations. Even for ultrathin shells of about 2 nm thickness, the strain caused by the high lattice mismatch between GaAs and InSb is relaxed almost completely. Transfer characteristics of the core-shell nanowires show an ambipolar conductance behavior whose strength strongly depends on the dimensions of the nanowires. The interpretation is given based on an electronic band profile which is calculated for completely relaxed core/shell structures. The peculiarities of the band alignment in this situation implies simultaneously occupied electron and hole channels in the InSb shell. The ambipolar behavior is then explained by the change of carrier concentration in both channels by the gate voltage.

High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

International Nuclear Information System (INIS)

Miah, M. Idrish

2008-01-01

High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained

High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong-4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-11-17

High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained.

Dual-mode operation of 2D material-base hot electron transistors.

Science.gov (United States)

Lan, Yann-Wen; Torres, Carlos M; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R; Lerner, Mitchell B; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L

2016-09-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Precipitation behavior in a nitride-strengthened martensitic heat resistant steel during hot deformation

Directory of Open Access Journals (Sweden)

Wenfeng Zhang

2015-09-01

Full Text Available The stress relaxation curves for three different hot deformation processes in the temperature range of 750–1000 °C were studied to develop an understanding of the precipitation behavior in a nitride-strengthened martensitic heat resistant steel (Zhang et al., Mater. Sci. Eng. A, 2015 [1]. This data article provides supporting data and detailed information on how to accurately analysis the stress relaxation data. The statistical analysis of the stress peak curves, including the number of peaks, the intensity of the peaks and the integral value of the pumps, was carried out. Meanwhile, the XRD energy spectrum data was also calculated in terms of lattice distortion.

Current leakage relaxation and charge trapping in ultra-porous low-k materials

International Nuclear Information System (INIS)

Borja, Juan; Plawsky, Joel L.; Gill, William N.; Lu, T.-M.; Bakhru, Hassaram

2014-01-01

Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k=k 0 ⋅(t+1) β−1 , where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523–5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films

Coupled energy-drift and force-balance equations for high-field hot-carrier transport

International Nuclear Information System (INIS)

Huang, Danhong; Alsing, P.M.; Apostolova, T.; Cardimona, D.A.

2005-01-01

Coupled energy-drift and force-balance equations that contain a frictional force for the center-of-mass motion of electrons are derived for hot-electron transport under a strong dc electric field. The frictional force is found to be related to the net rate of phonon emission, which takes away the momentum of a phonon from an electron during each phonon-emission event. The net rate of phonon emission is determined by the Boltzmann scattering equation, which depends on the distribution of electrons interacting with phonons. The work done by the frictional force is included into the energy-drift equation for the electron-relative scattering motion and is found to increase the thermal energy of the electrons. The importance of the hot-electron effect in the energy-drift term under a strong dc field is demonstrated in reducing the field-dependent drift velocity and mobility. The Doppler shift in the energy conservation of scattering electrons interacting with impurities and phonons is found to lead to an anisotropic distribution of electrons in the momentum space along the field direction. The importance of this anisotropic distribution is demonstrated through a comparison with the isotropic energy-balance equation, from which we find that defining a state-independent electron temperature becomes impossible. To the leading order, the energy-drift equation is linearized with a distribution function by expanding it into a Fokker-Planck-type equation, along with the expansions of both the force-balance equation and the Boltzmann scattering equation for hot phonons

Paramagnetic relaxation effects in perturbed angular correlations for arbitrary electronic relaxation time

International Nuclear Information System (INIS)

Chopin, C.; Spanjaard, D.; Hartmann-Boutron, F.

1975-01-01

Previous perturbation treatments of paramagnetic relaxation effects in γγ PAC were limited to the case of very short electronic relaxation times. This limitation is circumvented by invoking a new perturbation theory recently elaborated by Hirst and others for handling relaxation effects in Moessbauer spectra. Under the assumption of spherical electronic relaxation the perturbation factors are computed as functions of certain relaxation parameters which are directly related to the microscopic relaxation Hamiltonian. The results are compared to those of the stochastic theory of Scherer and Blume [fr

Large enhancements of thermopower and carrier mobility in quantum dot engineered bulk semiconductors.

Science.gov (United States)

Liu, Yuanfeng; Sahoo, Pranati; Makongo, Julien P A; Zhou, Xiaoyuan; Kim, Sung-Joo; Chi, Hang; Uher, Ctirad; Pan, Xiaoqing; Poudeu, Pierre F P

2013-05-22

The thermopower (S) and electrical conductivity (σ) in conventional semiconductors are coupled adversely through the carriers' density (n) making it difficult to achieve meaningful simultaneous improvements in both electronic properties through doping and/or substitutional chemistry. Here, we demonstrate the effectiveness of coherently embedded full-Heusler (FH) quantum dots (QDs) in tailoring the density, mobility, and effective mass of charge carriers in the n-type Ti(0.1)Zr(0.9)NiSn half-Heusler matrix. We propose that the embedded FH QD forms a potential barrier at the interface with the matrix due to the offset of their conduction band minima. This potential barrier discriminates existing charge carriers from the conduction band of the matrix with respect to their relative energy leading to simultaneous large enhancements of the thermopower (up to 200%) and carrier mobility (up to 43%) of the resulting Ti(0.1)Zr(0.9)Ni(1+x)Sn nanocomposites. The improvement in S with increasing mole fraction of the FH-QDs arises from a drastic reduction (up to 250%) in the effective carrier density coupled with an increase in the carrier's effective mass (m*), whereas the surprising enhancement in the mobility (μ) is attributed to an increase in the carrier's relaxation time (τ). This strategy to manipulate the transport behavior of existing ensembles of charge carriers within a bulk semiconductor using QDs is very promising and could pave the way to a new generation of high figure of merit thermoelectric materials.

Anisotropic carrier mobility in single- and bi-layer C3N sheets

Science.gov (United States)

Wang, Xueyan; Li, Qingfang; Wang, Haifeng; Gao, Yan; Hou, Juan; Shao, Jianxin

2018-05-01

Based on the density functional theory combined with the Boltzmann transport equation with relaxation time approximation, we investigate the electronic structure and predict the carrier mobility of single- and bi-layer newly fabricated 2D carbon nitrides C3N. Although C3N sheets possess graphene-like planar hexagonal structure, the calculated carrier mobility is remarkably anisotropic, which is found mainly induced by the anisotropic effective masses and deformation potential constants. Importantly, we find that both the electron and hole mobilities are considerable high, for example, the hole mobility along the armchair direction of single-layer C3N sheets can arrive as high as 1.08 ×104 cm2 V-1 s-1, greatly larger than that of C2N-h2D and many other typical 2D materials. Owing to the high and anisotropic carrier mobility and appropriate band gap, single- and bi-layer semiconducting C3N sheets may have great potential applications in high performance electronic and optoelectronic devices.

Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

International Nuclear Information System (INIS)

Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

2014-01-01

This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

Solid lipid nanoparticles: A drug carrier system

Directory of Open Access Journals (Sweden)

Rashmi R Kokardekar

2011-01-01

Full Text Available Solid lipid nanoparticles (SLN are a type of nanoparticles. They are submicron colloidal carriers which are composed of physiological lipids, dispersed in water or in aqueous surfactant solutions. SLN have wide range of advantages over other types of nanoparticles. These include availability of large-scale production methods and no signs of cytotoxicity, which are main hindrances in the application of other types of nanoparticles. Hot and cold homogenization techniques are mainly employed for its production. They are mainly evaluated on the basis of their drug release profile and particle internal structure. The products based on SLN are under development. They have a very wide range of applications in cosmetics and pharmaceuticals. They can be applied for any purpose, for which nanoparticles have a distinct advantage. Thus, SLN can be used extensively as an alternative to the existing drug carrier systems, providing more flexibility with respect to the area of applications and also aspects for commercialization.

SEMICONDUCTOR DEVICES: Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

Science.gov (United States)

Jin, Li; Hongxia, Liu; Bin, Li; Lei, Cao; Bo, Yuan

2010-08-01

For the first time, a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator (DMG SSOI) MOSFETs is developed. We investigate the improved short channel effect (SCE), hot carrier effect (HCE), drain-induced barrier-lowering (DIBL) and carrier transport efficiency for the novel structure MOSFET. The analytical model takes into account the effects of different metal gate lengths, work functions, the drain bias and Ge mole fraction in the relaxed SiGe buffer. The surface potential in the channel region exhibits a step potential, which can suppress SCE, HCE and DIBL. Also, strained-Si and SOI structure can improve the carrier transport efficiency, with strained-Si being particularly effective. Further, the threshold voltage model correctly predicts a “rollup" in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe buffer. The validity of the two-dimensional analytical model is verified using numerical simulations.

Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

International Nuclear Information System (INIS)

Li Jin; Liu Hongxia; Li Bin; Cao Lei; Yuan Bo

2010-01-01

For the first time, a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator (DMG SSOI) MOSFETs is developed. We investigate the improved short channel effect (SCE), hot carrier effect (HCE), drain-induced barrier-lowering (DIBL) and carrier transport efficiency for the novel structure MOSFET. The analytical model takes into account the effects of different metal gate lengths, work functions, the drain bias and Ge mole fraction in the relaxed SiGe buffer. The surface potential in the channel region exhibits a step potential, which can suppress SCE, HCE and DIBL. Also, strained-Si and SOI structure can improve the carrier transport efficiency, with strained-Si being particularly effective. Further, the threshold voltage model correctly predicts a 'rollup' in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe buffer. The validity of the two-dimensional analytical model is verified using numerical simulations. (semiconductor devices)

Relaxation of microparticles exposed to hydrodynamic forces in microfluidic conduits.

Science.gov (United States)

Janča, Josef; Halabalová, Věra; Polášek, Vladimír; Vašina, Martin; Menshikova, Anastasia Yu

2011-02-01

The behavior of microparticles exposed to gravitational and lift forces and to the velocity gradient in flow velocity profile formed in microfluidic conduits is studied from the viewpoint of the transient period (the relaxation) between the moment at which a particle starts to be transported by the hydrodynamic flow and the time at which it reaches an equilibrium position, characterized by a balance of all active forces. The theoretical model allowing the calculation of the relaxation time is proposed. The numerical calculus based on the proposed model is compared with the experimental data obtained under different experimental conditions, namely, for different lengths of microfluidic channels, different average linear velocities of the carrier liquid, and different sizes and densities of the particles used in the study. The results are important for the optimization of microfluidic separation units such as microthermal field-flow fractionation channels in which the separation or manipulation of the microparticles of various origin, synthetic, natural, biological, etc., is performed under similar experimental conditions but by applying an additional thermodynamic force.

Connecting optical and X-ray tracers of galaxy cluster relaxation

Science.gov (United States)

Roberts, Ian D.; Parker, Laura C.; Hlavacek-Larrondo, Julie

2018-04-01

Substantial effort has been devoted in determining the ideal proxy for quantifying the morphology of the hot intracluster medium in clusters of galaxies. These proxies, based on X-ray emission, typically require expensive, high-quality X-ray observations making them difficult to apply to large surveys of groups and clusters. Here, we compare optical relaxation proxies with X-ray asymmetries and centroid shifts for a sample of Sloan Digital Sky Survey clusters with high-quality, archival X-ray data from Chandra and XMM-Newton. The three optical relaxation measures considered are the shape of the member-galaxy projected velocity distribution - measured by the Anderson-Darling (AD) statistic, the stellar mass gap between the most-massive and second-most-massive cluster galaxy, and the offset between the most-massive galaxy (MMG) position and the luminosity-weighted cluster centre. The AD statistic and stellar mass gap correlate significantly with X-ray relaxation proxies, with the AD statistic being the stronger correlator. Conversely, we find no evidence for a correlation between X-ray asymmetry or centroid shift and the MMG offset. High-mass clusters (Mhalo > 1014.5 M⊙) in this sample have X-ray asymmetries, centroid shifts, and Anderson-Darling statistics which are systematically larger than for low-mass systems. Finally, considering the dichotomy of Gaussian and non-Gaussian clusters (measured by the AD test), we show that the probability of being a non-Gaussian cluster correlates significantly with X-ray asymmetry but only shows a marginal correlation with centroid shift. These results confirm the shape of the radial velocity distribution as a useful proxy for cluster relaxation, which can then be applied to large redshift surveys lacking extensive X-ray coverage.

Structural, optical and Carrier dynamics of self-assembled InGaN nanocolumns on Si(111)

Science.gov (United States)

Kumar, Praveen; Devi, Pooja; Soto Rodriguez, P. E. D.; Jain, Rishabh; Jaggi, Neena; Sinha, R. K.; Kumar, Mahesh

2018-05-01

We investigated the morphological, structural, optical, electrical and carrier relaxation dynamic changes on the self-assembled grown InGaN nanocolumns (NCs) directly on p-Si(111) substrate at two different substrate temperature, namely 580 °C (A) and 500 °C (B). The emission wavelength of comparably low temperature (LT) grown NCs was red-shifted from 3.2eV to 2.4eV. First observations on the charge carrier dynamics of these directly grown NCs show comparable broad excited state absorption (ESA) for LT gown NCs, which manifest bi-exponential decay due to the radiative defects generated during the coalescence of these NCs.

Enhanced Dissolution of a Porous Carrier-Containing Ternary Amorphous Solid Dispersion System Prepared by a Hot Melt Method.

Science.gov (United States)

Hanada, Masataka; Jermain, Scott V; Williams, Robert O

2018-01-01

The focus of our study was to employ a solvent-free, thermal process to evaluate the use of a porous carrier in a drug-polymer-porous carrier ternary formulation containing a high drug load (e.g., ≥50% w/w). The purpose of the study was to improve the dissolution properties of the biopharmaceutical classification system class II drug, indomethacin, in the ternary formulation. The effect that the selected polymer has on properties of the formulation was studied, and the formulation characteristics of hypromellose (AF15), copovidone (VA64), and polyvinyl alcohol-polyethylene glycol graft copolymer was evaluated to understand differences in dissolution rates and drug adsorption onto the porous carrier. The ternary formulations were manufactured using a thermal technique that relied on heating and mixing, without the necessity of mechanical shear. All thermally processed granules that employed the porous carrier exhibited immediate release compared with crystalline indomethacin and physical mixtures. In addition, the ternary formulations maintained supersaturation compared with the binary formulations without polymer. The results of this study indicated that the thermally processed ternary formulations containing a porous carrier demonstrated a much improved dissolution profile in nonsink conditions. Copyright © 2018 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

Relaxation characteristics of hastelloy X

International Nuclear Information System (INIS)

Suzuki, Kazuhiko

1980-02-01

Relaxation diagrams of Hastelloy X (relaxation curves, relaxation design diagrams, etc.) were generated from the creep constitutive equation of Hastelloy X, using inelastic stress analysis code TEPICC-J. These data are in good agreement with experimental relaxation data of ORNL-5479. Three typical inelastic stress analyses were performed for various relaxation behaviors of the high-temperature structures. An attempt was also made to predict these relaxation behaviors by the relaxation curves. (author)

Corroborative evidences of TV γ -scaling of the α-relaxation originating from the primitive relaxation/JG β relaxation

Science.gov (United States)

Ngai, K. L.; Paluch, M.

2017-12-01

Successful thermodynamic scaling of the structural alpha-relaxation time or transport coefficients of glass-forming liquids determined at various temperatures T and pressures P means the data conform to a single function of the product variable TVgamma, where V is the specific volume and gamma is a material specific constant. In the past two decades we have witnessed successful TVgamma-scaling in many molecular, polymeric, and even metallic glass-formers, and gamma is related to the slope of the repulsive part of the intermolecular potential. The advances made indicate TVgamma-scaling is an important aspect of the dynamic and thermodynamic properties of glass-formers. In this paper we show the origin of TVgamma-scaling is not from the structural alpha-relaxation time. Instead it comes from its precursor, the Johari-Goldstein beta-relaxation or the primitive relaxation of the Coupling Model and their relaxation times or tau_0 respectively. It is remarkable that all relaxation times are functions of TVgamma with the same gama, as well as the fractional exponent of the Kohlrausch correlation function of the structural alpha-relaxation. We arrive at this conclusion convincingly based on corroborative evidences from a number of experiments and molecular dynamics simulations performed on a wide variety of glass-formers and in conjunction with consistency with the predictions of the Coupling Model.

Potential of HfN, ZrN, and TiH as hot carrier absorber and Al2O3/Ge quantum well/Al2O3 and Al2O3/PbS quantum dots/Al2O3 as energy selective contacts

Science.gov (United States)

Shrestha, Santosh; Chung, Simon; Liao, Yuanxun; Wang, Pei; Cao, Wenkai; Wen, Xiaoming; Gupta, Neeti; Conibeer, Gavin

2017-08-01

The hot carrier (HC) solar cell is one of the most promising advanced photovoltaic concepts. It aims to minimise two major losses in single junction solar cells due to sub-band gap loss and thermalisation of above band gap photons by using a small bandgap absorber, and, importantly, collecting the photo-generated carriers before they thermalise. In this paper we will present recent development of the two critical components of the HC solar cell, i.e., the absorber and energy selective contacts (ESCs). For absorber, fabrication and carrier cooling rates in potential bulk materials — hafnium nitride, zirconium nitride, and titanium hydride are presented. Results of ESCs employing double barrier resonant tunneling structures Al2O3/Ge quantum well (QW)/Al2O3 and Al2O3/PbS quantum dots (QDs)/Al2O3 are also presented. These results are expected to guide further development of practical HC solar cell devices.

Capturing molecular multimode relaxation processes in excitable gases based on decomposition of acoustic relaxation spectra

Science.gov (United States)

Zhu, Ming; Liu, Tingting; Wang, Shu; Zhang, Kesheng

2017-08-01

Existing two-frequency reconstructive methods can only capture primary (single) molecular relaxation processes in excitable gases. In this paper, we present a reconstructive method based on the novel decomposition of frequency-dependent acoustic relaxation spectra to capture the entire molecular multimode relaxation process. This decomposition of acoustic relaxation spectra is developed from the frequency-dependent effective specific heat, indicating that a multi-relaxation process is the sum of the interior single-relaxation processes. Based on this decomposition, we can reconstruct the entire multi-relaxation process by capturing the relaxation times and relaxation strengths of N interior single-relaxation processes, using the measurements of acoustic absorption and sound speed at 2N frequencies. Experimental data for the gas mixtures CO2-N2 and CO2-O2 validate our decomposition and reconstruction approach.

Time-resolved terahertz spectroscopy of charge carrier dynamics in the chalcogenide glass As30Se30Te40 [Invited

DEFF Research Database (Denmark)

Wang, Tianwu; Romanova, Elena A.; Abdel-Moneim, Nabil

2016-01-01

absorption bands at 2-3 and 5-8 THz were observed. TRTS reveals an ultrafast relaxation process of the photoinduced carrier response, well described by a rate equation model with a finite concentration of mid-bandgap trap states for self-trapped excitons. The photoinduced conductivity can be well described...

Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/graphene/h -BN heterostructures

Science.gov (United States)

Zihlmann, Simon; Cummings, Aron W.; Garcia, Jose H.; Kedves, Máté; Watanabe, Kenji; Taniguchi, Takashi; Schönenberger, Christian; Makk, Péter

2018-02-01

Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition-metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of spin-orbit coupling and its relaxation mechanism remained unknown. We show an increased spin-orbit coupling close to the charge neutrality point in graphene, where topological states are expected to appear. Single-layer graphene encapsulated between the transition-metal dichalcogenide WSe2 and h -BN is found to exhibit exceptional quality with mobilities as high as 1 ×105 cm2 V-1 s-1. At the same time clear weak antilocalization indicates strong spin-orbit coupling, and a large spin relaxation anisotropy due to the presence of a dominating symmetric spin-orbit coupling is found. Doping-dependent measurements show that the spin relaxation of the in-plane spins is largely dominated by a valley-Zeeman spin-orbit coupling and that the intrinsic spin-orbit coupling plays a minor role in spin relaxation. The strong spin-valley coupling opens new possibilities in exploring spin and valley degree of freedom in graphene with the realization of new concepts in spin manipulation.

Infrared studies of impurity states and ultrafast carrier dynamics in semiconductor quantum structures

Energy Technology Data Exchange (ETDEWEB)

Stehr, D.

2007-12-28

This thesis deals with infrared studies of impurity states, ultrafast carrier dynamics as well as coherent intersubband polarizations in semiconductor quantum structures such as quantum wells and superlattices, based on the GaAs/AlGaAs material system. In the first part it is shown that the 2p{sub z} confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. These results also require reinterpretation of previous experimental data. The relaxation dynamics of interminiband transitions in doped GaAs/AlGaAs superlattices in the mid-IR are studied. This involves single-color pump-probe measurements to explore the dynamics at different wavelengths, which is performed with the Rossendorf freeelectron laser (FEL), providing picosecond pulses in a range from 3-200 {mu}m and are used for the first time within this thesis. In these experiments, a fast bleaching of the interminiband transition is observed followed by thermalization and subsequent relaxation, whose time constants are determined to be 1-2 picoseconds. This is followed by an additional component due to carrier cooling in the lower miniband. In the second part, two-color pump-probe measurements are performed, involving the FEL as the pump source and a table-top broad-band tunable THz source for probing the transmission changes. In addition, the dynamics of excited electrons within the minibands is explored and their contribution quantitatively extracted from the measurements. Intersubband absorption experiments of photoexcited carriers in single quantum well structures, measured directly in the time-domain, i.e. probing coherently the polarization between the first and the second subband, are presented. By varying the carrier

Applications of ultrashort laser pulses in science and technology; Proceedings of the Meeting, The Hague, Netherlands, Mar. 12, 13, 1990

Science.gov (United States)

Antonetti, Andre (Editor)

1990-01-01

Topics discussed are on the generation of high-intensity femtosecond lasers, the high-repetition and infrared femtosecond pulses, and physics of semiconductors and applications. Papers are presented on the femtosecond pulse generation at 193 nm; the generation of intense subpicosecond and femtosecond pulses; intense tunable subpicosecond and femtosecond pulses in the visible and infrared, generated by optical parametric oscillators; a high-efficiency high-energy optical amplifier for femtosecond pulses; and the generation of solitons, periodic pulsing, and nonlinearities in GaAs. Other papers are on ultrafast relaxation dynamics of photoexcited carriers in GaAs, high-order optical nonlinear susceptibilities of transparent glasses, subnanosecond risetime high-power pulse generation using photoconductive bulk GaAs devices, femtosecond studies of plasma formation in crystalline and amorphous silicon, and subpicosecond dynamics of hot carrier relaxation in InP and GaAs.

Real-Time Observation of Ultrafast Intraband Relaxation and Exciton Multiplication in PbS Quantum Dots

KAUST Repository

El-Ballouli, Ala’a O.

2014-03-19

We examine ultrafast intraconduction band relaxation and multiple-exciton generation (MEG) in PbS quantum dots (QDs) using transient absorption spectroscopy with 120 fs temporal resolution. The intraconduction band relaxation can be directly and excellently resolved spectrally and temporally by applying broadband pump-probe spectroscopy to excite and detect the wavelengths around the exciton absorption peak, which is located in the near-infrared region. The time-resolved data unambiguously demonstrate that the intraband relaxation time progressively increases as the pump-photon energy increases. Moreover, the relaxation time becomes much shorter as the size of the QDs decreases, indicating the crucial role of spatial confinement in the intraband relaxation process. Additionally, our results reveal the systematic scaling of the intraband relaxation time with both excess energy above the effective energy band gap and QD size. We also assess MEG in different sizes of the QDs. Under the condition of high-energy photon excitation, which is well above the MEG energy threshold, ultrafast bleach recovery due to the nonradiative Auger recombination of the multiple electron-hole pairs provides conclusive experimental evidence for the presence of MEG. For instance, we achieved quantum efficiencies of 159, 129 and 106% per single-absorbed photon at pump photoexcition of three times the band gap for QDs with band gaps of 880 nm (1.41 eV), 1000 nm (1.24 eV) and 1210 nm (1.0 eV), respectively. These findings demonstrate clearly that the efficiency of transferring excess photon energy to carrier multiplication is significantly increased in smaller QDs compared with larger ones. Finally, we discuss the Auger recombination dynamics of the multiple electron-hole pairs as a function of QD size.

Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

Science.gov (United States)

Lund, Cory; Hestroffer, Karine; Hatui, Nirupam; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-11-01

Smooth relaxed N-polar InGaN films were grown by metal-organic CVD (MOCVD) on N-polar InGaN pseudosubstrates (PSs) using a novel digital approach consisting of a constant In precursor flow with the pulsed injection of H2 carrier gas. InGaN layers grown on PSs exhibited an In composition of about 50% higher than those of the layers grown on N-polar GaN templates, assuming the in-plane lattice constant of the relaxed PSs, corresponding to In0.11Ga0.89N. Additionally, the luminescence recorded from InGaN layers grown on PSs at 490 nm was twice as intense as that obtained from the layers deposited on coloaded GaN-on-sapphire templates, which emitted at 430 nm.

Ultrafast surface carrier dynamics in the topological insulator Bi₂Te₃.

Science.gov (United States)

Hajlaoui, M; Papalazarou, E; Mauchain, J; Lantz, G; Moisan, N; Boschetto, D; Jiang, Z; Miotkowski, I; Chen, Y P; Taleb-Ibrahimi, A; Perfetti, L; Marsi, M

2012-07-11

We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi(2)Te(3) following a femtosecond laser excitation. Using time and angle-resolved photoelectron spectroscopy, we provide a direct real-time visualization of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface states is initially determined by interband scattering from the bulk conduction band, lasting for about 0.5 ps; subsequently, few picoseconds are necessary for the Dirac cone nonequilibrium electrons to recover a Fermi-Dirac distribution, while their relaxation extends over more than 10 ps. The surface sensitivity of our measurements makes it possible to estimate the range of the bulk-surface interband scattering channel, indicating that the process is effective over a distance of 5 nm or less. This establishes a correlation between the nanoscale thickness of the bulk charge reservoir and the evolution of the ultrafast carrier dynamics in the surface Dirac cone.

Fast-electron-relaxation measurement for laser-solid interaction at relativistic laser intensities

International Nuclear Information System (INIS)

Chen, H.; Shepherd, R.; Chung, H. K.; Kemp, A.; Hansen, S. B.; Wilks, S. C.; Ping, Y.; Widmann, K.; Fournier, K. B.; Beiersdorfer, P.; Dyer, G.; Faenov, A.; Pikuz, T.

2007-01-01

We present measurements of the fast-electron-relaxation time in short-pulse (0.5 ps) laser-solid interactions for laser intensities of 10 17 , 10 18 , and 10 19 W/cm 2 , using a picosecond time-resolved x-ray spectrometer and a time-integrated electron spectrometer. We find that the laser coupling to hot electrons increases as the laser intensity becomes relativistic, and that the thermalization of fast electrons occurs over time scales on the order of 10 ps at all laser intensities. The experimental data are analyzed using a combination of models that include Kα generation, collisional coupling, and plasma expansion

Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Klimov, V.; McBranch, D.; Schwarz, C.

1998-08-10

Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

Perspective on the prospects of a carrier multiplication nanocrystal solar cell.

Science.gov (United States)

Nair, Gautham; Chang, Liang-Yi; Geyer, Scott M; Bawendi, Moungi G

2011-05-11

This article presents a perspective on the experimental and theoretical work to date on the efficiency of carrier multiplication (CM) in colloidal semiconductor nanocrystals (NCs). Early reports on CM in NCs suggested large CM efficiency enhancements. However, recent experiments have shown that CM in nanocrystalline samples is not significantly stronger, and often is weaker, than in the parent bulk when compared on an absolute photon energy basis. This finding is supported by theoretical consideration of the CM process and the competing intraband relaxation. We discuss the experimental artifacts that may have led to the apparently strong CM estimated in early reports. The finding of bulklike CM in NCs suggests that the main promise of quantum confinement is to boost the photovoltage at which carriers can be extracted. With this in mind, we discuss research directions that may result in effective use of CM in a solar cell.

On the accuracy of current TCAD hot carrier injection models in nanoscale devices

Science.gov (United States)

Zaka, Alban; Rafhay, Quentin; Iellina, Matteo; Palestri, Pierpaolo; Clerc, Raphaël; Rideau, Denis; Garetto, Davide; Dornel, Erwan; Singer, Julien; Pananakakis, Georges; Tavernier, Clément; Jaouen, Hervé

2010-12-01

In this work, the hot electron injection models presently available for technology support have been investigated within the context of the development of advanced embedded non-volatile memories. The distribution functions obtained by these models (namely the Fiegna Model - FM [1], the Lucky Electron Model - LEM [2] and the recently implemented Spherical Harmonics Expansion of the Boltzman's Transport Equation - SHE [3]), have been systematically compared to rigorous Monte Carlo (MC) results [4], both in homogeneous and device conditions. Gate-to-drain current ratio and gate current density simulation has also been benchmarked in device simulations. Results indicate that local models such as FM, can partially capture the channel hot electron injection, at the price of model parameter adjustments. Moreover, at least in the device and field condition considered in this work, an overall better agreement with MC simulations has been obtained using the 1st order SHE, even without any particular fitting procedure. Extending the results presented in [3] by exploring shorter gate lengths and addressing the floating gate voltage dependence of the gate current, this work shows that the SHE method could contribute to bridge the gap between the rigorous but time consuming MC method and less rigorous but suitable TCAD local models.

Hot Deformation Behavior of Hot-Extruded AA7175 Through Hot Torsion Tests.

Science.gov (United States)

Lee, Se-Yeon; Jung, Taek-Kyun; Son, Hyeon-Woo; Kim, Sang-Wook; Son, Kwang-Tae; Choi, Ho-Joon; Oh, Sang-Ho; Lee, Ji-Woon; Hyun, Soong-Keun

2018-03-01

The hot deformation behavior of hot-extruded AA7175 was investigated with flow curves and processing maps through hot torsion tests. The flow curves and the deformed microstructures revealed that dynamic recrystallization (DRX) occurred in the hot-extruded AA7175 during hot working. The failure strain was highest at medium temperature. This was mainly influenced by the dynamic precipitation of fine rod-shaped MgZn2. The processing map determined the optimal deformation condition for the alloy during hot working.

Mozart versus new age music: relaxation states, stress, and ABC relaxation theory.

Science.gov (United States)

Smith, Jonathan C; Joyce, Carol A

2004-01-01

Smith's (2001) Attentional Behavioral Cognitive (ABC) relaxation theory proposes that all approaches to relaxation (including music) have the potential for evoking one or more of 15 factor-analytically derived relaxation states, or "R-States" (Sleepiness, Disengagement, Rested / Refreshed, Energized, Physical Relaxation, At Ease/Peace, Joy, Mental Quiet, Childlike Innocence, Thankfulness and Love, Mystery, Awe and Wonder, Prayerfulness, Timeless/Boundless/Infinite, and Aware). The present study investigated R-States and stress symptom-patterns associated with listening to Mozart versus New Age music. Students (N = 63) were divided into three relaxation groups based on previously determined preferences. Fourteen listened to a 28-minute tape recording of Mozart's Eine Kleine Nachtmusik and 14 listened to a 28-minute tape of Steven Halpern's New Age Serenity Suite. Others (n = 35) did not want music and instead chose a set of popular recreational magazines. Participants engaged in their relaxation activity at home for three consecutive days for 28 minutes a session. Before and after each session, each person completed the Smith Relaxation States Inventory (Smith, 2001), a comprehensive questionnaire tapping 15 R-States as well as the stress states of somatic stress, worry, and negative emotion. Results revealed no differences at Session 1. At Session 2, those who listened to Mozart reported higher levels of At Ease/Peace and lower levels of Negative Emotion. Pronounced differences emerged at Session 3. Mozart listeners uniquely reported substantially higher levels of Mental Quiet, Awe and Wonder, and Mystery. Mozart listeners reported higher levels, and New Age listeners slightly elevated levels, of At Ease/Peace and Rested/Refreshed. Both Mozart and New Age listeners reported higher levels of Thankfulness and Love. In summary, those who listened to Mozart's Eine Kleine Nachtmusik reported more psychological relaxation and less stress than either those who listened to

Drift of charge carriers in crystalline organic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Dong, Jingjuan; Si, Wei [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China); Wu, Chang-Qin, E-mail: cqw@fudan.edu.cn [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China); Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 (China)

2016-04-14

We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ∼10{sup 5} V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

Spin relaxation dynamics of holes in intrinsic GaAs quantum wells studied by transient circular dichromatic absorption spectroscopy at room temperature.

Science.gov (United States)

Fang, Shaoyin; Zhu, Ruidan; Lai, Tianshu

2017-03-21

Spin relaxation dynamics of holes in intrinsic GaAs quantum wells is studied using time-resolved circular dichromatic absorption spectroscopy at room temperature. It is found that ultrafast dynamics is dominated by the cooperative contributions of band filling and many-body effects. The relative contribution of the two effects is opposite in strength for electrons and holes. As a result, transient circular dichromatic differential transmission (TCD-DT) with co- and cross-circularly polarized pump and probe presents different strength at several picosecond delay time. Ultrafast spin relaxation dynamics of excited holes is sensitively reflected in TCD-DT with cross-circularly polarized pump and probe. A model, including coherent artifact, thermalization of nonthermal carriers and the cooperative contribution of band filling and many-body effects, is developed, and used to fit TCD-DT with cross-circularly polarized pump and probe. Spin relaxation time of holes is achieved as a function of excited hole density for the first time at room temperature, and increases with hole density, which disagrees with a theoretical prediction based on EY spin relaxation mechanism, implying that EY mechanism may be not dominant hole spin relaxation mechanism at room temperature, but DP mechanism is dominant possibly.

Electronic transport and lasing in microstructures

International Nuclear Information System (INIS)

Lax, M.

1992-01-01

We consider the interaction of hot carriers with hot phonons in a quantum well. Transport is considered in the transverse direction and tunneling through the well barriers. Time-dependent transport effects down to the femto-second regime are included, as are strong and/or microwave fields, with negative resistance effects. Resonant tunneling assisted by phonon relaxation and infra-red radiation will be explored. The limitations on transmission of information due to partition noise, as influenced by the design of semiconductor feedback lasers will be considered. The use of light scattering and decision theory to detect shell-like aerosols is examined

Mechanical relaxation in glasses

International Nuclear Information System (INIS)

Hiki, Y.

2004-01-01

The basic properties of glasses and the characteristics of mechanical relaxation in glasses were briefly reviewed, and then our studies concerned were presented. Experimental methods adopted were viscosity, internal friction, ultrasonic attenuation, and Brillouin scattering measurements. The specimens used were several kinds of inorganic, organic, and metallic glasses. The measurements were mainly carried out from the room temperature up to the glass transition temperature, and the relaxation time was determined as a function of temperature. The 'double relaxation' composed of two Arrhenius-type relaxations was observed in many materials. In both relaxations, the 'compensation effect' showing a correlation of the pre-exponential factor and the activation energy was observed. These results were explained by considering the 'complex relaxation' due to cooperative motions of atoms or group of atoms. Values of activation energy near the glass transition determined by the various experimental methods were compared with each other

Incorporating mesh-insensitive structural stress into the fatigue assessment procedure of common structural rules for bulk carriers

Directory of Open Access Journals (Sweden)

Seong-Min Kim

2015-01-01

Full Text Available This study introduces a fatigue assessment procedure using mesh-insensitive structural stress method based on the Common Structural Rules for Bulk Carriers by considering important factors, such as mean stress and thickness effects. The fatigue assessment result of mesh-insensitive structural stress method have been compared with CSR procedure based on equivalent notch stress at major hot spot points in the area near the ballast hold for a 180 K bulk carrier. The possibility of implementing mesh-insensitive structural stress method in the fatigue assessment procedure for ship structures is discussed.

ENERGY RELAXATION OF HELIUM ATOMS IN ASTROPHYSICAL GASES

International Nuclear Information System (INIS)

Lewkow, N. R.; Kharchenko, V.; Zhang, P.

2012-01-01

We report accurate parameters describing energy relaxation of He atoms in atomic gases, important for astrophysics and atmospheric science. Collisional energy exchange between helium atoms and atomic constituents of the interstellar gas, heliosphere, and upper planetary atmosphere has been investigated. Energy transfer rates, number of collisions required for thermalization, energy distributions of recoil atoms, and other major parameters of energy relaxation for fast He atoms in thermal H, He, and O gases have been computed in a broad interval of energies from 10 meV to 10 keV. This energy interval is important for astrophysical applications involving the energy deposition of energetic atoms and ions into atmospheres of planets and exoplanets, atmospheric evolution, and analysis of non-equilibrium processes in the interstellar gas and heliosphere. Angular- and energy-dependent cross sections, required for an accurate description of the momentum-energy transfer, are obtained using ab initio interaction potentials and quantum mechanical calculations for scattering processes. Calculation methods used include partial wave analysis for collisional energies below 2 keV and the eikonal approximation at energies higher than 100 eV, keeping a significant energy region of overlap, 0.1-2 keV, between these two methods for their mutual verification. The partial wave method and the eikonal approximation excellently match results obtained with each other as well as experimental data, providing reliable cross sections in the astrophysically important interval of energies from 10 meV to 10 keV. Analytical formulae, interpolating obtained energy- and angular-dependent cross sections, are presented to simplify potential applications of the reported database. Thermalization of fast He atoms in the interstellar gas and energy relaxation of hot He and O atoms in the upper atmosphere of Mars are considered as illustrative examples of potential applications of the new database.

Dephasing times in quantum dots due to elastic LO phonon-carrier collisions

DEFF Research Database (Denmark)

Uskov, A. V.; Jauho, Antti-Pekka; Tromborg, Bjarne

2000-01-01

Interpretation of experiments on quantum dot (QD) lasers presents a challenge: the phonon bottleneck, which should strongly suppress relaxation and dephasing of the discrete energy states, often seems to be inoperative. We suggest and develop a theory for an intrinsic mechanism for dephasing in Q......: second-order elastic interaction between quantum dot charge carriers and LO phonons. The calculated dephasing times are of the order of 200 fs at room temperature, consistent with experiments. The phonon bottleneck thus does not prevent significant room temperature dephasing....

Theoretical models of the spin-dependent charge-carrier dynamics in metals and semiconductors

International Nuclear Information System (INIS)

Krauss, Michael

2010-01-01

This thesis is concerned with spin-dependent carrier dynamics in semiconductors and metals. We are especially interested in the dynamics on ultrashort timescales, which can be driven by ultrashort optical excitation, and use of a theoretical description in terms of the dynamical spin-density matrix. The first part of this thesis is concerned with spin-dependent carrier dynamics in bulk GaAs. For conduction electrons in GaAs, the most important mechanisms, by which an electron spin polarization can be destroyed, are the Dyakonov-Perel and Bir-Aronov-Pikus mechanisms. For the Dyakonov-Perel effect, our treatment is the first calculation of the dynamics of the spindensity matrix for bulk GaAs. From our microsopic calculation, we extract spin-dephasing times. In particular, we can describe the dependence of the spin-dephasing time for a wide range of n-doping concentrations and explain the spin-dephasing dynamics in and out of the motional-narrowing regime. For the Bir-Aronov-Pikus mechanism, i.e., the exchange interaction of electronics with holes, approximate relaxation times for limiting cases were derived about 30 years ago. We show that these approaches provide an incomplete picture of spin relaxation, and are only valid for high or low densities, whereas the microscopic calculation is capable of explaining the electronic dynamics also for intermediate doping densities, which are most interesting for typical experiments. The spin-dependent hole dynamics in GaAs is much faster than that of electrons, because the p-like hole bands experience the spin-orbit interaction directly, rather than through the interaction with other bands. The resulting spin relaxation is sometimes referred to as an Elliott-Yafet mechanism. For the first time, we present results for the microscopic dynamics of this mechanism for holes in bulk GaAs, and we discuss the different results that may be obtained with different measurement techniques. We also analyze the importance of ''spin hot

Breathing and Relaxation

Science.gov (United States)

... Find a Doctor Relaxation is the absence of tension in muscle groups and a minimum or absence ... Drill Meditation Progressive Muscle Relaxation Minimizing Shortness of Breath Visualization This information has been approved by Shelby ...

A Hot-electron Direct Detector for Radioastronomy

Science.gov (United States)

Karasik, B. S.; McGrath, W. R.; LeDuc, H. G.

2000-01-01

A new approach is proposed to improve the sensitivity of direct-detection bolometers. The idea is to adjust a speed of the thermal relaxation of hot-electrons in a nanometer size normal metal or superconductive transition edge bolometer by controlling the elastic electron mean free path. If the bolometer contacts are made of a superconductor with high critical temperature then the thermal diffusion into the contacts is absent because of the Andreev's reflection and the electron-phonon relaxation is the only mechanism for heat removal. The relaxation rate should behave as 7(exp 4)l at subkelvin temperatures (l is the electron elastic mean free path) and can be reduced by factor of 10 - 100 by decreasing l. Then an antenna- or waveguide-coupled bolometer with a time constant approx. 10(exp -3) to 10(exp -5) S at T approx. = 0.1 - 0.3 K will exhibit photon-noise limited performance in millimeter and subn-millimeter range. The bolometer will have a figure-of-merit NEk square root of tau approx. = 10(exp -22) 10(exp -21) W/Hz at 100 mK which is 10(exp 3) times smaller than that of a state-of-the-art bolometer. This will allow for a tremendous increase in speed which will have a significant impact for observational mapping applications. Alternatively, the bolometer could operate at higher temperature with still superior sensitivity This research was performed by the Center for Space Microelectronics Technology, JPL, California Institute of Technology, under the contract for NASA.

Characterization of GaSb/InAs type II infrared detectors at very long wavelengths: carrier scattering at defect clusters

Science.gov (United States)

Kitchin, M. R.; Jaros, M.

2003-06-01

We report a systematic study into carrier scattering by isovalent defects within GaSb/InAs superlattices. The heterostructure system which we investigate has attracted recent interest as the active region of a photodetector for very long wavelength infrared (VLWIR) (⩾12 μm) radiation. To achieve our objective, we employed models of the electronic band structure and scattering cross-section. We considered isolated, substitutional defects at each atom site throughout the unit cell in turn and found that the scattering magnitude generally follows the carrier envelope function, being greatest where the overlap of charge with the defect is highest. We scrutinized the contribution of lattice relaxation around defects to the overall scattering, by comparing calculations where this effect was, in turn, included and excluded. We identified some anomalous contributions of relaxation to both qualitative and quantitative features of the cross-section. Physical mechanisms to explain these effects must be arrived at in order to attain satisfactory characterization of these materials, highlighting the need for both microscopic models and further research. Additional modelling of islands of such defects indicated that the cross-section is proportional to the square of the number of constituent atoms, for both carrier types (holes and electrons) and each defect type. This article demonstrates important links between key growth issues and the dynamical properties of these novel semiconductor devices.

Ultrafast relaxation dynamics of electrons in Au clusters capped with dodecanethiol molecules

International Nuclear Information System (INIS)

Hamanaka, Y.; Fukagawa, K.; Tai, Y.; Murakami, J.; Nakamura, A.

2006-01-01

We have investigated electron relaxation dynamics of size-selected Au clusters capped by dodecanethiol molecules in the cluster sizes of 28-142 atoms using femtosecond pump-probe spectroscopy. Absorption spectra of 28-71-atom clusters show discrete peaks due to the optical transitions between quantized states, while an absorption band due to the surface plasmon is observed in 142-atom clusters. In the differential absorption spectra measured by the pump-probe experiments, a large redshift of 140 meV lasting over 10 ps and absorption bleaching decaying within 2 ps are observed at the absorption peaks of 28-atom clusters. The redshift is ascribed to a charge transfer between Au clusters and dodecanethiol molecules adsorbed on the cluster surface, and the bleaching is due to blocking of the optical transitions between the ground state and the occupied electronic states due to the Pauli's-exclusion principle. Such behavior is in contrast to the 142-atom clusters, where the cooling of hot electrons generated by photo-excitation determines the relaxation dynamics. These results indicate molecular properties of the 28-atom Au cluster-dodecanethiol system

New insights for mesospheric OH: multi-quantum vibrational relaxation as a driver for non-local thermodynamic equilibrium

Directory of Open Access Journals (Sweden)

K. S. Kalogerakis

2018-01-01

Full Text Available The question of whether mesospheric OH(v rotational population distributions are in equilibrium with the local kinetic temperature has been debated over several decades. Despite several indications for the existence of non-equilibrium effects, the general consensus has been that emissions originating from low rotational levels are thermalized. Sky spectra simultaneously observing several vibrational levels demonstrated reproducible trends in the extracted OH(v rotational temperatures as a function of vibrational excitation. Laboratory experiments provided information on rotational energy transfer and direct evidence for fast multi-quantum OH(high-v vibrational relaxation by O atoms. We examine the relationship of the new relaxation pathways with the behavior exhibited by OH(v rotational population distributions. Rapid OH(high-v + O multi-quantum vibrational relaxation connects high and low vibrational levels and enhances the hot tail of the OH(low-v rotational distributions. The effective rotational temperatures of mesospheric OH(v are found to deviate from local thermodynamic equilibrium for all observed vibrational levels. Dedicated to Tom G. Slanger in celebration of his 5 decades of research in aeronomy.

Characterization of structural relaxation in inorganic glasses using length dilatometry

Science.gov (United States)

Koontz, Erick

The processes that govern how a glass relaxes towards its thermodynamic quasi-equilibrium state are major factors in understanding glass behavior near the glass transition region, as characterized by the glass transition temperature (Tg). Intrinsic glass properties such as specific volume, enthalpy, entropy, density, etc. are used to map the behavior of the glass network below in and near the transition region. The question of whether a true thermodynamic second order phase transition takes place in the glass transition region is another pending question. Linking viscosity behavior to entropy, or viewing the glass configuration as an energy landscape are just a couple of the most prevalent methods used for attempting to understand the glass transition. The structural relaxation behavior of inorganic glasses is important for more than scientific reasons, many commercial glass processing operations including glass melting and certain forms of optical fabrication include significant time spent in the glass transition region. For this reason knowledge of structural relaxation processes can, at a minimum, provide information for annealing duration of melt-quenched glasses. The development of a predictive model for annealing time prescription has the potential to save glass manufacturers significant time and money as well as increasing volume throughput. In optical hot forming processes such as precision glass molding, molded optical components can significantly change in shape upon cooling through the glass transition. This change in shape is not scientifically predictable as of yet though manufacturers typically use empirical rules developed in house. The classification of glass behavior in the glass transition region would allow molds to be accurately designed and save money for the producers. The work discussed in this dissertation is comprised of the development of a dilatometric measurement and characterization method of structural relaxation. The measurement and

Plasmonic photocatalytic reactions enhanced by hot electrons in a one-dimensional quantum well

Directory of Open Access Journals (Sweden)

H. J. Huang

2015-11-01

Full Text Available The plasmonic endothermic oxidation of ammonium ions in a spinning disk reactor resulted in light energy transformation through quantum hot charge carriers (QHC, or quantum hot electrons, during a chemical reaction. It is demonstrated with a simple model that light of various intensities enhance the chemical oxidization of ammonium ions in water. It was further observed that light illumination, which induces the formation of plasmons on a platinum (Pt thin film, provided higher processing efficiency compared with the reaction on a bare glass disk. These induced plasmons generate quantum hot electrons with increasing momentum and energy in the one-dimensional quantum well of a Pt thin film. The energy carried by the quantum hot electrons provided the energy needed to catalyze the chemical reaction. The results indicate that one-dimensional confinement in spherical coordinates (i.e., nanoparticles is not necessary to provide an extra excited state for QHC generation; an 8 nm Pt thin film for one-dimensional confinement in Cartesian coordinates can also provide the extra excited state for the generation of QHC.

Sleep, Stress & Relaxation: Rejuvenate Body & Mind

Science.gov (United States)

Sleep, Stress & Relaxation: Rejuvenate Body & Mind; Relieve Stress; best ways to relieve stress; best way to relieve stress; different ways to relieve stress; does smoking relieve stress; does tobacco relieve stress; how can I relieve stress; how can you relieve stress; how do I relieve stress; reduce stress; does smoking reduce stress; how can I reduce stress; how to reduce stress; reduce stress; reduce stress levels; reducing stress; smoking reduce stress; smoking reduces stress; stress reducing techniques; techniques to reduce stress; stress relief; best stress relief; natural stress relief; need stress relief; relief for stress; relief from stress; relief of stress; smoking and stress relief; smoking for stress relief; smoking stress relief; deal with stress; dealing with stress; dealing with anger; dealing with stress; different ways of dealing with stress; help dealing with stress; how to deal with anger; how to deal with stress; how to deal with stress when quitting smoking; stress management; free stress management; how can you manage stress; how do you manage stress; how to manage stress; manage stress; management of stress; management stress; managing stress; strategies for managing stress; coping with stress; cope with stress; copeing with stress; coping and stress; coping skills for stress; coping strategies for stress; coping strategies with stress; coping strategy for stress; coping with stress; coping with stress and anxiety; emotional health; emotional health; emotional health article; emotional health articles; deep relaxation; deep breathing relaxation techniques; deep muscle relaxation; deep relaxation; deep relaxation meditation; deep relaxation technique; deep relaxation techniques; meditation exercises; mindful exercises; mindful meditation exercises; online relaxation exercises; relaxation breathing exercises; relaxation exercise; relaxation exercises; stress relaxation; methods of relaxation for stress; relax stress; relax techniques stress

Spin Relaxation and Manipulation in Spin-orbit Qubits

Science.gov (United States)

Borhani, Massoud; Hu, Xuedong

2012-02-01

We derive a generalized form of the Electric Dipole Spin Resonance (EDSR) Hamiltonian in the presence of the spin-orbit interaction for single spins in an elliptic quantum dot (QD) subject to an arbitrary (in both direction and magnitude) applied magnetic field. We predict a nonlinear behavior of the Rabi frequency as a function of the magnetic field for sufficiently large Zeeman energies, and present a microscopic expression for the anisotropic electron g-tensor. Similarly, an EDSR Hamiltonian is devised for two spins confined in a double quantum dot (DQD). Finally, we calculate two-electron-spin relaxation rates due to phonon emission, for both in-plane and perpendicular magnetic fields. Our results have immediate applications to current EDSR experiments on nanowire QDs, g-factor optimization of confined carriers, and spin decay measurements in DQD spin-orbit qubits.

Spin and energy transfer between magnetic ions and free carriers in diluted-magnetic semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Yakovlev, D.R. [Experimental Physics 2, University of Dortmund, 44227 Dortmund (Germany); Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Kneip, M.; Bayer, M. [Experimental Physics 2, University of Dortmund, 44227 Dortmund (Germany); Maksimov, A.A.; Tartakovskii, I.I. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka (Russian Federation); Keller, D.; Ossau, W.; Molenkamp, L.W. [Physikalisches Institut der Universitaet Wuerzburg, 97074 Wuerzburg (Germany); Scherbakov, A.V.; Akimov, A.V. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Waag, A. [Abteilung Halbleiterphysik, Universitaet Ulm, 89081 Ulm (Germany)

2004-03-01

In this paper we give a brief overview of our studies on dynamical processes in diluted-magnetic-semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te. Presence of free carriers is an important factor which determines the energy- and spin transfer in a coupled systems of magnetic ions, lattice (the phonon system) and carriers. We report also new data on dynamical response of magnetic ions interacting with photogenerated electron-hole plasma. (Zn,Mn)Se/(Zn,Be)Se structures with relatively high Mn content of 11% provide spin-lattice relaxation time of about 20 ns, which is considerably shorter then the characteristic times of nonequilibrium phonons ranging to 1 {mu}s. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning

Science.gov (United States)

Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong

2014-07-01

The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.

Origin of localized states in zinc-blende ZnCdSe thin films and the influence on carrier relaxation of self-assembled ZnTe/ZnCdSe quantum dots

International Nuclear Information System (INIS)

Lee, Ling; Dai, Yue-Ru; Yang, Chu-Shou; Fan, Wen-Chung; Chou, Wu-Ching

2015-01-01

Highlights: • The localized emission in zinc-blende ZnCdSe is induced by excess selenium. • An optimized growth is demonstrated as the VI/II ratio approaches unity. • Size-independent lifetimes are observed in ZnTe/ZnCdSe quantum dots. • Localized electrons in the capping layer dominate size-independent lifetimes. - Abstract: This study discovered the origin of deep level emission in zinc-blende ZnCdSe thin films grown by molecular beam epitaxy, in which a localization behavior was noticed. Pronounced deep level emission observed in films grown under a VI/II ratio of 1.74 (Se-accumulated regime) could be suppressed by a lower VI/II ratio of 1.04 (intermediate regime) and 0.74 (metal-rich regime). Hence the localized states could be correlated to excess selenium accumulated at the growth surface. The localized states also influence the carrier relaxation process of self-assembled ZnTe quantum dots embedded in a ZnCdSe matrix. Once quantum dots surmount the wetting layer, localized electrons in the capping layer dominate the type-II transition and exhibit size-independent lifetimes

Influence of Carrier Gas Composition on the Stress of Al₂O₃ Coatings Prepared by the Aerosol Deposition Method.

Science.gov (United States)

Schubert, Michael; Exner, Jörg; Moos, Ralf

2014-08-05

Al₂O₃ films were prepared by the aerosol deposition method at room temperature using different carrier gas compositions. The layers were deposited on alumina substrates and the film stress of the layer was calculated by measuring the deformation of the substrate. It was shown that the film stress can be halved by using oxygen instead of nitrogen or helium as the carrier gas. The substrates were annealed at different temperature steps to gain information about the temperature dependence of the reduction of the implemented stress. Total relaxation of the stress can already be achieved at 300 °C. The XRD pattern shows crystallite growth and reduction of microstrain while annealing.

The effects of progressive muscle relaxation and autogenic relaxation on young soccer players' mood states.

Science.gov (United States)

Hashim, Hairul Anuar; Hanafi Ahmad Yusof, Hazwani

2011-06-01

This study was designed to compare the effects of two different relaxation techniques, namely progressive muscle relaxation (PMR) and autogenic relaxation (AGR) on moods of young soccer players. sixteen adolescent athletes (mean age: 14.1 ± 1.3) received either PMR or AGR training. Using Profile of Mood States- Adolescents, their mood states were measured one week before relaxation training, before the first relaxation session, and after the twelfth relaxation session. Mixed ANOVA revealed no significant interaction effects and no significant main effects in any of the subscales. However, significant main effects for testing sessions were found for confusion, depression, fatigue, and tension subscales. Post hoc tests revealed post-intervention reductions in the confusion, depression, fatigue, and tension subscale scores. These two relaxation techniques induce equivalent mood responses and may be used to regulate young soccer players' mood states.

Giant dipole resonances in hot nuclear matter in the model of self-relaxing mean field

International Nuclear Information System (INIS)

Okolowicz, J.; Ploszajczak, M.; Drozdz, S.; Caurier, E.

1989-01-01

The extended time-dependent Hartree-Fock approach is applied for the description of the isovector giant dipole resonance in 40 Ca at finite temperatures. The thermalization process is described using the relaxation-time ansatz for the collision integral. Strong inhibition of the giant-dipole-resonance γ-decay is found due to the fast vaporization of the nuclear surface for thermal excitation energies above E * /A ≅ 4.5 MeV. This pre-equilibrium emission of particles in the vapor phase is associated with the radial expansion of nucleus and with the vanishing particle binding energies mainly for protons. (orig.)

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

Science.gov (United States)

Wu, Haiyan; Ma, Ziguang; Jiang, Yang; Wang, Lu; Yang, Haojun; Li, Yangfeng; Zuo, Peng; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Liu, Wuming; Chen, Hong

2016-11-01

A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported. According to the well established light-to-electricity conversion theory, quantum wells (QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels, owing to quantum confinement, and cannot form a photocurrent. We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent, indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs. We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions. Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340) and the Innovative Clean-energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

Carrier Lifetime in Exfoliated Few-Layer Graphene Determined from Intersubband Optical Transitions

Science.gov (United States)

Limmer, Thomas; Feldmann, Jochen; Da Como, Enrico

2013-05-01

We report a femtosecond transient spectroscopy study in the near to middle infrared range, 0.8-0.35 eV photon energy, on graphene and few layer graphene single flakes. The spectra show an evolving structure of photoinduced absorption bands superimposed on the bleaching caused by Pauli blocking of the interband optically coupled states. Supported by tight-binding model calculations, we assign the photoinduced absorption features to intersubband transitions as the number of layers is increased. Interestingly, the intersubband photoinduced resonances show a longer dynamics than the interband bleaching, because of their independence from the absolute energy of the carriers with respect to the Dirac point. The dynamic of these intersubband transitions reflects the lifetime of the hot carriers and provides an elegant method to access it in this important class of semimetals.

Carrier lifetime in exfoliated few-layer graphene determined from intersubband optical transitions.

Science.gov (United States)

Limmer, Thomas; Feldmann, Jochen; Da Como, Enrico

2013-05-24

We report a femtosecond transient spectroscopy study in the near to middle infrared range, 0.8-0.35 eV photon energy, on graphene and few layer graphene single flakes. The spectra show an evolving structure of photoinduced absorption bands superimposed on the bleaching caused by Pauli blocking of the interband optically coupled states. Supported by tight-binding model calculations, we assign the photoinduced absorption features to intersubband transitions as the number of layers is increased. Interestingly, the intersubband photoinduced resonances show a longer dynamics than the interband bleaching, because of their independence from the absolute energy of the carriers with respect to the Dirac point. The dynamic of these intersubband transitions reflects the lifetime of the hot carriers and provides an elegant method to access it in this important class of semimetals.

Hopping ladder and power relaxation due to donor-acceptor pairs

International Nuclear Information System (INIS)

Kostadinov, I.Z.

1985-11-01

Hopping between donor-acceptor pairs leads to peculiar temperature dependence of the conductivity and the photoconductivity under subband gap illumination in the form of non-linear activation energies ladder. The correlated and uncorrelated distributions of pairs are considered and the conditions for the ladder existence are determined. The relaxation of the carrier concentration fluctuations is studied and power type decay is found. The temperature dependence of the exponent is calculated in agreement with the non-exponential decay of the pulse excited luminescence observed by Dean et al. The temperature dependence of the luminescence intensity also shows variable activation energy as found here. The exponent value α=1.316 is also in agreement with the data for crystalline and amorphous materials. (author)

The Effects of Progressive Muscle Relaxation and Autogenic Relaxation on Young Soccer Players’ Mood States

Science.gov (United States)

Hashim, Hairul Anuar; Hanafi@Ahmad Yusof, Hazwani

2011-01-01

Purpose This study was designed to compare the effects of two different relaxation techniques, namely progressive muscle relaxation (PMR) and autogenic relaxation (AGR) on moods of young soccer players. Methods Sixteen adolescent athletes (mean age: 14.1 ± 1.3) received either PMR or AGR training. Using Profile of Mood States- Adolescents, their mood states were measured one week before relaxation training, before the first relaxation session, and after the twelfth relaxation session. Results Mixed ANOVA revealed no significant interaction effects and no significant main effects in any of the subscales. However, significant main effects for testing sessions were found for confusion, depression, fatigue, and tension subscales. Post hoc tests revealed post-intervention reductions in the confusion, depression, fatigue, and tension subscale scores. Conclusion These two relaxation techniques induce equivalent mood responses and may be used to regulate young soccer players’ mood states. PMID:22375225

New bathing therapy in Japanese hot springs using radiation from radon

International Nuclear Information System (INIS)

Sugimori, Kenji; Okajima, Maiko; Oowada, Mizuno; Koyama, Yoshihisa; Shozugawa, Katsumi; Matsuo, Motoyuki

2015-01-01

Japanese-style bathing is an important part of the traditional culture of Japan, and most Japanese people love hot springs. Many kinds of hot springs exist all over Japan and are often a major factor when considering where to go for travel, relaxation and rest. However, other countries, especially in Europe, also use hot springs for medical treatments such as balneo therapy, hydrokinetic therapy, fango therapy and inhalation therapy. Some hot springs in Japan are located on radioactive springs. Five typical radioactive spring areas can be found in Tamagawa (Akita Pref.), Murasugi (Niigata Pref.), Masutomi (Yamanashi Pref.), Misasa (Tottori Pref.), and Sekigane (Tottori Pref.). While hot springs in Japan are mainly used for bathing, these radioactive springs are also used for bedrock bathing and/or inhalation therapy. In Italy, Fango therapy is a medical treatment conducted under a medical doctor's super vision with peloids maturated with hot spring water called 'Fango'. Japanese style Fango, named Biofango R , has already been made by using natural hot springs that have been modified with Italian Fango. Medical evaluation of test subjects has shown good results after treatment with Fango therapy. An important point in Fango therapy is how to make satisfactory maturated peloids. For this purpose, an experiment was conducted at Masutomi hot spring to confirm the possibility of using radioactive spring water to make maturated peloids. The basement material for the peloids used for this experiment was made from bentonite mixed with original rock from the Masutomi hot spring area consisting of crushed basalt and granite that have a fine amount of radioactivity. These peloids were circulated through hot spring water for two weeks to a month and then used for treatment. The medical data showed that therapy using this method resulted in greater improvement in 'test subjects' body functions compared with the data from previous observations. This

Operation of a novel hot-electron vertical-cavity surface-emitting laser

Science.gov (United States)

Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.

1998-07-01

The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

Charge carrier dynamics in PMMA-LiClO4 based polymer electrolytes plasticized with different plasticizers

Science.gov (United States)

Pal, P.; Ghosh, A.

2017-07-01

We have studied the charge carrier dynamics in poly(methylmethacrylate)-LiClO4 polymer electrolytes plasticized with different plasticizers such as ethylene carbonate (EC), propylene carbonate (PC), polyethylene glycol (PEG), and dimethyl carbonate (DMC). We have measured the broadband complex conductivity spectra of these electrolytes in the frequency range of 0.01 Hz-3 GHz and in the temperature range of 203 K-363 K and analyzed the conductivity spectra in the framework of the random barrier model by taking into account the contribution of the electrode polarization observed at low frequencies and/or at high temperatures. It is observed that the temperature dependences of the ionic conductivity and relaxation time follow the Vogel-Tammann-Fulcher relation for all plasticized electrolytes. We have also performed the scaling of the conductivity spectra, which indicates that the charge carrier dynamics is almost independent of temperature and plasticizers in a limited frequency range. The existence of nearly constant loss in these electrolytes has been observed at low temperatures and/or high frequencies. We have studied the dielectric relaxation in these electrolytes using electric modulus formalism and obtained the stretched exponent and the decay function. We have observed less cooperative ion dynamics in electrolytes plasticized with DMC compared to electrolytes plasticized with EC, PC, and PEG.

Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance

KAUST Repository

Banavoth, Murali

2016-12-14

Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including various fabrication methods, device architectures, and surface passivation, progress is yet to be made in understanding the actual operational temperature on the electronic properties and the device performances. Therefore, the substantial effect of temperature on the optoelectronic properties, charge separation, charge recombination dynamics, and photoconversion efficiency are explored. The results clearly demonstrated a significant enhancement in the carrier mobility, photocurrent, charge carrier lifetime, and solar cell performance in the 60 ± 5 °C temperature range. In this temperature range, perovskite crystal exhibits a highly symmetrical relaxed cubic structure with well-aligned domains that are perpendicular to a principal axis, thereby remarkably improving the device operation. This finding provides a new key variable component and paves the way toward using perovskite crystals in highly efficient photovoltaic cells.

Solar 'hot spots' are still hot

Science.gov (United States)

Bai, Taeil

1990-01-01

Longitude distributions of solar flares are not random but show evidence for active zones (or hot spots) where flares are concentrated. According to a previous study, two hot spots in the northern hemisphere, which rotate with a synodic period of about 26.72 days, produced the majority of major flares, during solar cycles 20 and 21. The more prominent of these two hot spots is found to be still active during the rising part of cycle 22, producing the majority of northern hemisphere major flares. The synodic rotation period of this hot spot is 26.727 + or - 0.007 days. There is also evidence for hot spots in the southern hemisphere. Two hot spots separated by 180 deg are found to rotate with a period of 29.407 days, with one of them having persisted in the same locations during cycles 19-22 and the other, during cycles 20-22.

NMR-CT in muscular disorders. Muscle T/sub 1/ values in Duchenne muscular dystrophy carriers

Energy Technology Data Exchange (ETDEWEB)

Matsumura, Kiichiro; Nakano, Imaharu; Fukuda, Nobuo; Ikehira, Hiroo; Tateno, Yukio

1987-02-01

Proton NMR-CT (magnetic field strength 0.1 Tesla, resonant frequency 4.5 MHz) was performed in 10 normal females and 19 Duchenne muscular dystrophy (DMD) carriers. The mean age was 39 +- 12 years for the normal females and 42 +- 6 years for the DMD carriers. In DMD carriers, there were 4 definite, 4 probable, and 11 possible carriers. T/sub 1/ (spin-lattice relaxation time) image was obtained for a slice at the buttock, mid-thigh and calf levels respectively. T/sub 1/ values were measured for the medial portion of the gluteus maximus, the vastus lateralis of the quadriceps femoris, and the gastrocnemius. The bound water fraction (BWF) was calculated from Fullerton's equation based on the fast proton diffusion model. The following results were obtained: (1) In normal females, muscle T/sub 1/ value was highest in the gastrocnemius and lowest in the gluteus maximus. (2) In DMD carriers, T/sub 1/ values of the gluteus maximus and quadriceps femoris were significantly higher than those of the normal females. There was, however, no significant difference in T/sub 1/ value of the gastrocnemius between DMD carriers and normal females. (3) In DMD carriers, BWFs of the gluteus maximus and quadriceps femoris were significantly lower than those of the normal females. (4) In DMD carriers, no significant correlation was observed between the muscle T/sub 1/ values and the serum creatine phosphokinase values. Increased tissue water content in the lower parts of the body due to gravity is considered to be the primary cause of the high T/sub 1/ value in the gastrocnemius of normal females. The presence of the degenerating muscle fibers are presumed responsible for the high T/sub 1/ value and low BWF in the proximal muscles of DMD carriers.

NMR-CT in muscular disorders. Muscle T/sub 1/ values in Duchenne muscular dystrophy carriers

Energy Technology Data Exchange (ETDEWEB)

Matsumura, Kiichiro; Nakano, Imaharu; Fukuda, Nobuo; Ikehira, Hiroo; Tateno, Yukio

1987-02-01

Proton NMR-CT (magnetic field strength 0.1 Tesla, resonant frequency 4.5 MHz) was performed in 10 normal females and 19 Duchenne muscular dystrophy (DMD) carriers. The mean age was 39 +- 12 years for the normal females and 42 +- 6 years for the DMD carriers. In DMD carriers, there were 4 definite, 4 probable, and 11 possible carriers. T/sub 1/ (spin-lattice relaxation time) image was obtained for a slice at the buttock, mid-thigh and calf levels respectively. T/sub 1/ values were measured for the medial portion of the gluteus maximus, the vastus lateralis of the quadriceps femoris, and the gastrocnemius. The bound water fraction (BWF) was calculated from Fullerton's equation based on the fast proton diffusion model. The following results were obtained: (1) In normal females, muscle T/sub 1/ value was highest in the gastrocnemius and lowest in the gluteus maximus. (2) In DMD carriers, T/sub 1/ values of the gluteus maximus and quadriceps femoris were significantly higher than those of the normal females. There was, however, no significant difference in T/sub 1/ value of the gastrocnemius between DMD carriers and normal females. (3) In DMD carriers, BWFs of the gluteus maximus and quadriceps femoris were significantly lower than those of the normal females. (4) In DMD carriers, no significant correlation was observed between the muscle T/sub 1/ values and the serum creatine phosphokinase values. Increased tissue water content in the lower parts of the body due to gravity is considered to be the primary cause of the high T/sub 1/ value in the gastrocnemius of normal females. The presence of the degenerating muscle fibers are presumed responsible for the high T/sub 1/ value and low BWF in the proximal muscles of DMD carriers.

Molecular Ions in Ion Upflows and their Effects on Hot Atomic Oxygen Production

Science.gov (United States)

Foss, V.; Yau, A. W.; Shizgal, B.

2017-12-01

We present new direct ion composition observations of molecular ions in auroral ion upflows from the CASSIOPE Enhanced Polar Outflow Probe (e-POP). These observed molecular ions are N2+, NO+, and possibly O2+, and are found to occur at all e-POP altitudes starting at about 400 km, during auroral substorms and the different phases of magnetic storms, sometimes with upflow velocities exceeding a few hundred meters per second and abundances of 5-10%. The dissociative recombination of both O2+ and NO+ was previously proposed as an important source of hot oxygen atoms in the topside thermosphere [Hickey et al., 1995]. We investigate the possible effect of the observed molecular ions on the production of hot oxygen atoms in the storm and substorm-time auroral thermosphere. We present numerical solutions of the Boltzmann equation for the steady-state oxygen energy distribution function, taking into account both the production of the hot atoms and their subsequent collisional relaxation. Our result suggests the formation of a hot oxygen population with a characteristic temperature on the order of 0.3 eV and constituting 1-5% of the oxygen density near the exobase. We discuss the implication of this result in the context of magnetosphere-ionosphere-thermosphere coupling.

Nonmaxwell relaxation in disordered media: Physical mechanisms and fractional relaxation equations

International Nuclear Information System (INIS)

Arkhincheev, V.E.

2004-12-01

The problem of charge relaxation in disordered systems has been solved. It is shown, that due to the inhomogeneity of the medium the charge relaxation has a non-Maxwell character. The two physical mechanisms of a such behavior have been founded. The first one is connected with the 'fractality' of conducting ways. The second mechanism of nonexponential non-Maxwell behavior is connected with the frequency dispersion of effective conductivity of heterogeneous medium, initially consisting of conducting phases without dispersion. The new generalized relaxation equations in the form of fractional temporal integro-differential equations are deduced. (author)

Relaxation and excitation electronic processes in dielectrics irradiated by ultrafast IR and VUV pulses

International Nuclear Information System (INIS)

Gaudin, J.

2005-11-01

We studied excitation and relaxation of electrons involved during interaction of visible and VUV femtosecond pulses with dielectrics. The generated population of hot electrons, having energy of few eV to few tens of eV above the bottom of the conduction band, is responsible of phenomena ranging to defect creation to optical breakdown. Owing to two techniques: photoemission and transient photoconductivity we improve the understanding of the The first photoemission experiments deal with dielectrics irradiated by 30 fs IR pulses. The photoemission spectra measured show a large population of electrons which energy rise up to 40 eV. We interpret this result in terms of a new absorption process: direct multi-photons inter-branch transitions. The 2. type of photoemission experiments are time resolved 'pump/probe' investigation. We study the relaxation of electrons excited by a VUV pulses. We used the high order harmonics (HOH) as light sources. We found surprisingly long decay time in the range of ps timescale. Last type of experiments is photoconductivity studies of diamond samples. Using HOH as light source we measure the displacement current induced by excited electrons in the conduction band. Those electrons relax mainly by impact ionisation creating secondary electrons. Hence by probing the number of electrons we were able to measure the efficiency of these relaxation processes. We observe a diminution of this efficiency when the energy of exciting photons is above 20 eV. Owing to Monte-Carlo simulation we interpret this result in terms of band structure effect. (author)

Electron-phonon relaxation and excited electron distribution in gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Zhukov, V. P. [Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Pervomayskaya st. 91, Yekaterinburg (Russian Federation); Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tyuterev, V. G., E-mail: valtyut00@mail.ru [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tomsk State Pedagogical University, Kievskaya st. 60, Tomsk (Russian Federation); Tomsk State University, Lenin st. 36, Tomsk (Russian Federation); Chulkov, E. V. [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tomsk State University, Lenin st. 36, Tomsk (Russian Federation); Departamento de Fisica de Materiales, Facultad de Ciencias Qumicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastian (Spain); Echenique, P. M. [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Departamento de Fisica de Materiales, Facultad de Ciencias Qumicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastian (Spain)

2016-08-28

We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates of inter-band recombination, and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy “tail” largely covers the conduction band. The shape of the high-energy “tail” strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in an irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of the electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi “tail” is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can essentially affect the charge transport in the irradiated and highly doped semiconductors.

The kinetics of low-temperature electron-phonon relaxation in a metallic film following instantaneous heating of the electrons

International Nuclear Information System (INIS)

Bezuglyi, A.I.; Shklovskii, V.A.

1997-01-01

The theoretical analysis of experiments on pulsed laser irradiation of metallic films sputtered on insulating supports is usually based on semiphenomenological dynamical equations for the electron and phonon temperatures, an approach that ignores the nonuniformity and the nonthermal nature of the phonon distribution function. In this paper we discuss a microscopic model that describes the dynamics of the electron-phonon system in terms of kinetic equations for the electron and phonon distribution functions. Such a model provides a microscopic picture of the nonlinear energy relaxation of the electron-phonon system of a rapidly heated film. We find that in a relatively thick film the energy relaxation of electrons consists of three stages: the emission of nonequilibrium phonons by 'hot' electrons, the thermalization of electrons and phonons due to phonon reabsorption, and finally the cooling of the thermalized electron-phonon system as a result of phonon exchange between film and substrate. In thin films, where there is no reabsorption of nonequilibrium phonons, the energy relaxation consists of only one stage, the first. The relaxation dynamics of an experimentally observable quantity, the phonon contribution to the electrical conductivity of the cooling film, is directly related to the dynamics of the electron temperature, which makes it possible to use the data of experiments on the relaxation of voltage across films to establish the electron-phonon and phonon-electron collision times and the average time of phonon escape from film to substrate

Solar hot spots are still hot

International Nuclear Information System (INIS)

Bai, T.

1990-01-01

Longitude distributions of solar flares are not random but show evidence for active zones (or hot spots) where flares are concentrated. According to a previous study, two hot spots in the northern hemisphere, which rotate with a synodic period of about 26.72 days, produced the majority of major flares, during solar cycles 20 and 21. The more prominent of these two hot spots is found to be still active during the rising part of cycle 22, producing the majority of northern hemisphere major flares. The synodic rotation period of this hot spot is 26.727 + or - 0.007 days. There is also evidence for hot spots in the southern hemisphere. Two hot spots separated by 180 deg are found to rotate with a period of 29.407 days, with one of them having persisted in the same locations during cycles 19-22 and the other, during cycles 20-22. 14 refs

Energy relaxation in IR laser excited Hg1-xCdxTe

International Nuclear Information System (INIS)

Storebo, A K; Brudevoll, T; Olsen, O; Norum, O C; Breivik, M

2009-01-01

IR laser excitation of Hg l-x Cd x Te by low-fluence femtosecond and high fluence microsecond pulses was explored for the technologically important alloy fractions x ∼ 0.2 and x ∼ 0.28. We have used first principles (LAPW) electronic structure calculations and finite element modelling, supported by Monte Carlo simulation for the description of femtosecond pulse carrier relaxation and the transport parameters. Laser wavelengths considered were 6.4 - 10.6 μm for x ∼ 0.2 and 3.8 - 4.8 μm for x ∼ 0.28, with an incident 1 microsecond pulse fluence of 2 J/cm 2 . Many energy transfer mechanisms are invoked due to the long timescales of the microsecond pulses, and a main challenge is therefore to elucidate how these interplay in situations away from thermal equilibrium. Mechanisms studied include one- and two-photon absorption (OPA and TPA) across the band gap, inter-valence band absorption (IVA) between light- and heavy hole bands, electron-hole recombination/impact ionization, band gap renormalisation, intra-band free carrier absorption (FCA), excess carrier temperatures, non-equilibrium phonon generation, and refractive index changes. In the high fluence case, lattice temperatures evolve considerably during the laser pulse in response to the heated carriers. The chosen photon energies lie just above the band gap at the starting lattice temperature of 77 K, and nonlinear effects therefore dominate as the material heats up and the band gap begins to exceed the photon energy. Because of the low photon energy we must rely on Auger recombination, inter-valence band absorption and free carrier absorption to heat the carrier plasma. Although some Hg l-x Cd x Te material parameters are now relatively well known, existing data for many of the processes are inadequate for cases far away from thermal equilibrium. Furthermore, the role of Auger recombination in relation to non-intrinsic recombination has been a matter of debate lately. In this respect, information from

HOT 2015

DEFF Research Database (Denmark)

Hannibal, Sara Stefansen

2016-01-01

HOT samler og formidler 21 literacykyndiges bud på, hvad der er hot, og hvad der bør være hot inden for literacy – og deres begrundelser for disse bud.......HOT samler og formidler 21 literacykyndiges bud på, hvad der er hot, og hvad der bør være hot inden for literacy – og deres begrundelser for disse bud....

TEACHING NEUROMUSCULAR RELAXATION.

Science.gov (United States)

NORRIS, JEANNE E.; STEINHAUS, ARTHUR H.

THIS STUDY ATTEMPTED TO FIND OUT WHETHER (1) THE METHODS FOR ATTAINING NEUROMUSCULAR RELAXATION THAT HAVE PROVED FRUITFUL IN THE ONE-TO-ONE RELATIONSHIP OF THE CLINIC CAN BE SUCCESSFULLY ADAPTED TO THE TEACHER-CLASS RELATIONSHIP OF THE CLASSROOM AND GYMNASIUM, AND (2) NEUROMUSCULAR RELAXATION CAN BE TAUGHT SUCCESSFULLY BY AN APPROPRIATELY TRAINED…

Beam-plasma interaction with an electron beam injecting into a symmetrically open plasma system; Electron beam relaxation. Puchkovo-plazmennoe vzaimodejstvie pri inzhektsii ehlektronnogo puchka v simmetrichno otkrytuyu plazmennuyu sistemu; Relaksatsiya ehlektronnogo puchka

Energy Technology Data Exchange (ETDEWEB)

Opanasenko, A V; Romanyuk, L I [AN Ukrainskoj SSR, Kiev (Ukrainian SSR). Inst. Yadernykh Issledovanij

1989-10-01

The relaxation of the electron beam with the electron density of 1-2 keV injected through the symmetrically open plasma system with the independent hot cathode Penning discharge is experimentally investigated. It is shown that the velocity distribution function of the electron beam changes after passing each wave generation zone induced by the beam. The contribution of different wave zones to the beam relaxation depends on the prehistory of the beam-plasma interaction and may be regulated by the selection of the plasma system parameters. By this way the complete relaxation of the electron beam can be achieved after the beam crossing the whole system.

The Effects of Progressive Relaxation and Music on Attention, Relaxation, and Stress Responses: An Investigation of the Cognitive-Behavioral Model of Relaxation

National Research Council Canada - National Science Library

Scheufele, Peter

1999-01-01

...) suggested that stress management techniques have specific effects A compromise position suggests that the specific effects of relaxation techniques are superimposed upon a general relaxation response...

Process controls for Bi2Te3-Sb2Te3 prepared by mechanical alloying and hot pressing

International Nuclear Information System (INIS)

Lee, Go-Eun; Kim, Il-Ho; Choi, Soon-Mok; Lim, Young-Soo; Seo, Won-Seon; Park, Jae-Soung; Yang, Seung-Ho

2014-01-01

p-Type Bi 2 Te 3 -Sb 2 Te 3 solid solutions were prepared by mechanical alloying (MA) and hot pressing (HP) under different process conditions, after which the transport and the thermoelectric properties were evaluated. The relative densities of all hot-pressed specimens were over 98%, and the microstructure and crystal orientation were independent of the HP direction. All specimens exhibited p-type conduction, and the electrical resistivity was observed to increase slightly with increasing temperature, indicating a degenerate semiconductor behavior. The carrier concentration decreased with increasing HP temperature while the mobility increased. The maximum figure of merit obtained was 0.86 at 323 K for Bi 0.5 Sb 1.5 Te 3 hot-pressed at 648 K.

HotRegion: a database of predicted hot spot clusters.

Science.gov (United States)

Cukuroglu, Engin; Gursoy, Attila; Keskin, Ozlem

2012-01-01

Hot spots are energetically important residues at protein interfaces and they are not randomly distributed across the interface but rather clustered. These clustered hot spots form hot regions. Hot regions are important for the stability of protein complexes, as well as providing specificity to binding sites. We propose a database called HotRegion, which provides the hot region information of the interfaces by using predicted hot spot residues, and structural properties of these interface residues such as pair potentials of interface residues, accessible surface area (ASA) and relative ASA values of interface residues of both monomer and complex forms of proteins. Also, the 3D visualization of the interface and interactions among hot spot residues are provided. HotRegion is accessible at http://prism.ccbb.ku.edu.tr/hotregion.

Relaxation and excitation electronic processes in dielectrics irradiated by ultrafast IR and VUV pulses; Processus electroniques d'excitation et de relaxation dans les solides dielectriques excites par des impulsions IR et XUV ultracourtes

Energy Technology Data Exchange (ETDEWEB)

Gaudin, J

2005-11-15

We studied excitation and relaxation of electrons involved during interaction of visible and VUV femtosecond pulses with dielectrics. The generated population of hot electrons, having energy of few eV to few tens of eV above the bottom of the conduction band, is responsible of phenomena ranging to defect creation to optical breakdown. Owing to two techniques: photoemission and transient photoconductivity we improve the understanding of the The first photoemission experiments deal with dielectrics irradiated by 30 fs IR pulses. The photoemission spectra measured show a large population of electrons which energy rise up to 40 eV. We interpret this result in terms of a new absorption process: direct multi-photons inter-branch transitions. The 2. type of photoemission experiments are time resolved 'pump/probe' investigation. We study the relaxation of electrons excited by a VUV pulses. We used the high order harmonics (HOH) as light sources. We found surprisingly long decay time in the range of ps timescale. Last type of experiments is photoconductivity studies of diamond samples. Using HOH as light source we measure the displacement current induced by excited electrons in the conduction band. Those electrons relax mainly by impact ionisation creating secondary electrons. Hence by probing the number of electrons we were able to measure the efficiency of these relaxation processes. We observe a diminution of this efficiency when the energy of exciting photons is above 20 eV. Owing to Monte-Carlo simulation we interpret this result in terms of band structure effect. (author)

A model for hot electron phenomena: Theory and general results

International Nuclear Information System (INIS)

Carrillo, J.L.; Rodriquez, M.A.

1988-10-01

We propose a model for the description of the hot electron phenomena in semiconductors. Based on this model we are able to reproduce accurately the main characteristics observed in experiments of electric field transport, optical absorption, steady state photoluminescence and relaxation process. Our theory does not contain free nor adjustable parameters, it is very fast computerwise, and incorporates the main collision mechanisms including screening and phonon heating effects. Our description on a set of nonlinear rate equations in which the interactions are represented by coupling coefficients or effective frequencies. We calculate three coefficients from the characteristic constants and the band structure of the material. (author). 22 refs, 5 figs, 1 tab

Magnetic relaxation in anisotropic magnets

DEFF Research Database (Denmark)

Lindgård, Per-Anker

1971-01-01

The line shape and the kinematic and thermodynamic slowing down of the critical and paramagnetic relaxation in axially anisotropic materials are discussed. Kinematic slowing down occurs only in the longitudinal relaxation function. The thermodynamic slowing down occurs in either the transverse...... or longitudinal relaxation function depending on the sign of the axial anisotropy....

Charge carrier dynamics in thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Strothkaemper, Christian

2013-06-24

This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

Time-resolved two-photon photoemission at the Si(001)-surface. Hot electron dynamics and two-dimensional Fano resonance; Zeitaufgeloeste Zweiphotonen-Photoemission an der Si(001)-Oberflaeche. Dynamik heisser Elektronen und zweidimensionaler Fano-Effekt

Energy Technology Data Exchange (ETDEWEB)

Eickhoff, Christian

2010-10-27

By combining ultrafast laser excitation with energy-, angle- and time-resolved twophoton photoemission (2PPE), the electronic properties of bulk silicon and the Si(001) surface are investigated in this thesis. A custom-built laser- and UHV-systemequipped with a display type 2D-CCD-detector gives new insight into the relaxation dynamics of excited carriers on a femtosecond timescale. The bandgap between occupied valence bands and unoccupied conduction bands characteristically influences the dynamics of excited electrons in the bulk, as well as in surface states and resonances. For the electron-phonon interaction this leads to the formation of a bottleneck during the relaxation of hot electrons in the conduction band, which maintains the elevated electronic temperature for several picoseconds. During relaxation, excited electrons also scatter from the conduction band into the unoccupied dangling-bond surface state D{sub down}. Depending on the excitation density this surface recombination is dominated by electron-electron- or electron-phonon scattering. The relaxation of the carriers in the D{sub down}-band is again slowed down by the formation of a bottleneck in electron-phonon coupling. Furthermore, the new laser system has allowed detection of the Rydberg-like series of image-potential resonances on the Si(001)-surface. It is shown that the lifetime of these image-potential resonances in front of the semiconducting surface exhibits the same behavior as those in front of metallic surfaces. Moreover the electron-phonon coupling in the first image-potential resonance was investigated and compared to the D{sub down}-surface state. For the first time, Fano-type lineprofiles are demonstrated and analyzed in a 2PPEprocess on a surface. Tuning the photon energy of the pump-laser across the resonance between the occupied dangling-bond state D{sub up}, and the unoccupied image-potential resonance n=1, reveals a clear intensity variation that can be successfully described

Relaxation and corrosion resistance of alloy 800 used for steam generator tubes of ship borne boilers

International Nuclear Information System (INIS)

Corrieu, J.M.; Cortial, F.; Maillard, J.L.; Vernot-Loier, C.; Lebeau, M.

1994-01-01

The INCO ''INCOLOY 800'' trademark groups the Fe-Cr-Ni alloys containing 30 to 35% nickel, 19 to 23% chromium, 0,15 to 0,60% aluminium, 0,15 to 0,60% titanium and less than 0,10% carbon contents, used as construction materials for condenser and heat exchanger tubes. In parallel with water chemistry control and studies aimed at reducing the residual stresses resulting from tube expansion, studies have been conducted to a better understanding of this alloy, its metallurgy and its corrosion behaviour under accurately defined fabrication and heat treatment conditions. The purpose of this paper is to present the results of a behaviour study of INDRET alloy 800 concerning isothermal relaxation and effects of the said relaxation heat treatments on alloy microstructure studied with a transmission electron-chemical method to determine the sensitiveness to intergranular corrosion, and by electrochemistry in pressurized hot water. (authors). 4 figs., 5 tabs., 7 refs

Three-dimensional hot electron photovoltaic device with vertically aligned TiO2 nanotubes.

Science.gov (United States)

Goddeti, Kalyan C; Lee, Changhwan; Lee, Young Keun; Park, Jeong Young

2018-05-09

Titanium dioxide (TiO 2 ) nanotubes with vertically aligned array structures show substantial advantages in solar cells as an electron transport material that offers a large surface area where charges travel linearly along the nanotubes. Integrating this one-dimensional semiconductor material with plasmonic metals to create a three-dimensional plasmonic nanodiode can influence solar energy conversion by utilizing the generated hot electrons. Here, we devised plasmonic Au/TiO 2 and Ag/TiO 2 nanodiode architectures composed of TiO 2 nanotube arrays for enhanced photon absorption, and for the subsequent generation and capture of hot carriers. The photocurrents and incident photon to current conversion efficiencies (IPCE) were obtained as a function of photon energy for hot electron detection. We observed enhanced photocurrents and IPCE using the Ag/TiO 2 nanodiode. The strong plasmonic peaks of the Au and Ag from the IPCE clearly indicate an enhancement of the hot electron flux resulting from the presence of surface plasmons. The calculated electric fields and the corresponding absorbances of the nanodiode using finite-difference time-domain simulation methods are also in good agreement with the experimental results. These results show a unique strategy of combining a hot electron photovoltaic device with a three-dimensional architecture, which has the clear advantages of maximizing light absorption and a metal-semiconductor interface area.

Time-dependent mobility and recombination of the photoinduced charge carriers in conjugated polymer/fullerene bulk heterojunction solar cells

Science.gov (United States)

Mozer, A. J.; Dennler, G.; Sariciftci, N. S.; Westerling, M.; Pivrikas, A.; Österbacka, R.; Juška, G.

2005-07-01

Time-dependent mobility and recombination in the blend of poly[2-methoxy-5-(3,7-dimethyloctyloxy)-phenylene vinylene] (MDMO-PPV) and 1-(3-methoxycarbonyl)propyl-1-phenyl-(6,6)- C61 (PCBM) is studied simultaneously using the photoinduced charge carrier extraction by linearly increasing voltage technique. The charge carriers are photogenerated by a strongly absorbed, 3 ns laser flash, and extracted by the application of a reverse bias voltage pulse after an adjustable delay time (tdel) . It is found that the mobility of the extracted charge carriers decreases with increasing delay time, especially shortly after photoexcitation. The time-dependent mobility μ(t) is attributed to the energy relaxation of the charge carriers towards the tail states of the density of states distribution. A model based on a dispersive bimolecular recombination is formulated, which properly describes the concentration decay of the extracted charge carriers at all measured temperatures and concentrations. The calculated bimolecular recombination coefficient β(t) is also found to be time-dependent exhibiting a power law dependence as β(t)=β0t-(1-γ) with increasing slope (1-γ) with decreasing temperatures. The temperature dependence study reveals that both the mobility and recombination of the photogenerated charge carriers are thermally activated processes with activation energy in the range of 0.1 eV. Finally, the direct comparison of μ(t) and β(t) shows that the recombination of the long-lived charge carriers is controlled by diffusion.

Spin manipulation and relaxation in spin-orbit qubits

Science.gov (United States)

Borhani, Massoud; Hu, Xuedong

2012-03-01

We derive a generalized form of the electric dipole spin resonance (EDSR) Hamiltonian in the presence of the spin-orbit interaction for single spins in an elliptic quantum dot (QD) subject to an arbitrary (in both direction and magnitude) applied magnetic field. We predict a nonlinear behavior of the Rabi frequency as a function of the magnetic field for sufficiently large Zeeman energies, and present a microscopic expression for the anisotropic electron g tensor. Similarly, an EDSR Hamiltonian is devised for two spins confined in a double quantum dot (DQD), where coherent Rabi oscillations between the singlet and triplet states are induced by jittering the inter-dot distance at the resonance frequency. Finally, we calculate two-electron-spin relaxation rates due to phonon emission, for both in-plane and perpendicular magnetic fields. Our results have immediate applications to current EDSR experiments on nanowire QDs, g-factor optimization of confined carriers, and spin decay measurements in DQD spin-orbit qubits.

Composition and structure of solid-phase carriers of activity in soils of the exclusion zone.; Stroenie i sostav tverdofaznykh nositelej aktivnosti v pochvakh Zony otchuzhdeniya ChAEhS.

Energy Technology Data Exchange (ETDEWEB)

Bondarenko, G N; Dolin, V V; Val` ter, A A; Tikhanov, Eh K [AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Geokhimii i Fiziki Mineralov; [Nauchno-Proizvodstvennoe Ob` ` edinenie Pripyat` , Chernobyl (Ukraine)

1994-12-31

From four different soils in the exclusion Chernobyl zone 35 << hot >> particles were picked out, their radionuclide and substance composition was investigated. To estimate a specific quantity of solid-phase carriers of activity we have calculated a ratio of activities of {sup 144} Ce and {sup 137} Cs in soils to the particles. Substance composition of the << hot >> particles investigated by the methods of electronic microscopy.

Cross relaxation in nitroxide spin labels

DEFF Research Database (Denmark)

Marsh, Derek

2016-01-01

Cross relaxation, and mI-dependence of the intrinsic electron spin-lattice relaxation rate We, are incorporated explicitly into the rate equations for the electron-spin population differences that govern the saturation behaviour of 14N- and 15N-nitroxide spin labels. Both prove important in spin......-label EPR and ELDOR, particularly for saturation recovery studies. Neither for saturation recovery, nor for CW-saturation EPR and CW-ELDOR, can cross relaxation be described simply by increasing the value of We, the intrinsic spin-lattice relaxation rate. Independence of the saturation recovery rates from...... the hyperfine line pumped or observed follows directly from solution of the rate equations including cross relaxation, even when the intrinsic spin-lattice relaxation rate We is mI-dependent....

Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene

Science.gov (United States)

Mihnev, Momchil T.; Tolsma, John R.; Divin, Charles J.; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A.; MacDonald, Allan H.; Norris, Theodore B.

2015-01-01

In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron–phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied. PMID:26399955

Relaxation System

Science.gov (United States)

1987-01-01

Environ Corporation's relaxation system is built around a body lounge, a kind of super easy chair that incorporates sensory devices. Computer controlled enclosure provides filtered ionized air to create a feeling of invigoration, enhanced by mood changing aromas. Occupant is also surrounded by multidimensional audio and the lighting is programmed to change colors, patterns, and intensity periodically. These and other sensory stimulators are designed to provide an environment in which the learning process is stimulated, because research has proven that while an individual is in a deep state of relaxation, the mind is more receptive to new information.

Cross-relaxation solid state lasers

International Nuclear Information System (INIS)

Antipenko, B.M.

1989-01-01

Cross-relaxation functional diagrams provide a high quantum efficiency for pumping bands of solid state laser media and a low waste heat. A large number of the cross-relaxation mechanisms for decay rare earth excited states in crystals have been investigated. These investigations have been a starting-point for development of the cross-relaxation solid state lasers. For example, the cross-relaxation interactions, have been used for the laser action development of LiYF 4 :Gd-Tb. These interactions are important elements of the functional diagrams of the 2 μm Ho-doped media sensitized with Er and Tm and the 3 μm Er-doped media. Recently, new efficient 2 μm laser media with cross-relaxation pumping diagrams have been developed. Physical aspects of these media are the subject of this paper. A new concept of the Er-doped medium, sensitized with Yb, is illustrated

Influence of Carrier Gas Composition on the Stress of Al2O3 Coatings Prepared by the Aerosol Deposition Method

Directory of Open Access Journals (Sweden)

Michael Schubert

2014-08-01

Full Text Available Al2O3 films were prepared by the aerosol deposition method at room temperature using different carrier gas compositions. The layers were deposited on alumina substrates and the film stress of the layer was calculated by measuring the deformation of the substrate. It was shown that the film stress can be halved by using oxygen instead of nitrogen or helium as the carrier gas. The substrates were annealed at different temperature steps to gain information about the temperature dependence of the reduction of the implemented stress. Total relaxation of the stress can already be achieved at 300 °C. The XRD pattern shows crystallite growth and reduction of microstrain while annealing.

The relaxation time approximation

International Nuclear Information System (INIS)

Gairola, R.P.; Indu, B.D.

1991-01-01

A plausible approximation has been made to estimate the relaxation time from a knowledge of the transition probability of phonons from one state (r vector, q vector) to other state (r' vector, q' vector), as a result of collision. The relaxation time, thus obtained, shows a strong dependence on temperature and weak dependence on the wave vector. In view of this dependence, relaxation time has been expressed in terms of a temperature Taylor's series in the first Brillouin zone. Consequently, a simple model for estimating the thermal conductivity is suggested. the calculations become much easier than the Callaway model. (author). 14 refs

Anomalous carrier life-time relaxation mediated by head group interaction in surface anchored MnSe quantum dots conjugated with albumin proteins

Energy Technology Data Exchange (ETDEWEB)

Sarma, Runjun; Mohanta, Dambarudhar, E-mail: best@tezu.ernet.in

2017-02-01

We report on the radiative emission decay dynamics of a less known, γ-phase manganese selenide quantum dot system (MnSe QDs) subjected to bio-functionalization. A short-ligand thioglycolic acid (TGA), and a long-chain sodium dodecyl sulfate (SDS) surfactants were used as surface anchors prior bioconjugation with albumin proteins (BSA). Time resolved photoluminescence (TR-PL) spectra of the QDs have revealed bi-exponential decay trends with the fast (τ{sub 1}) and slow (τ{sub 2}) decay parameters assigned to the core state recombination and surface trapped excitons; respectively. The average lifetime (τ{sub avg}) was found to get shortened from a value of ∼0.87 ns–0.72 ns in unconjugated and BSA conjugated MnSe-TGA QDs; respectively. Conversely, MnSe-SDS QDs with BSA conjugation exhibited nearly four-fold enhancement of τ{sub avg} with respect to its unconjugated counterpart. Moreover, a considerable amount of Förster resonance energy transfer (FRET) was found to occur from the TGA coated MnSe QDs to BSA and with an ensuing efficiency of ∼61%. The origin of anomalous carrier life-time relaxation features has also been encountered through a simplified model as regards head group interaction experienced by the MnSe QDs with different surfactant types. Exploiting luminescence decay characteristics of a magneto-fluorescent candidate could find immense scope in diverse biological applications including assays, labeling and imaging. - Highlights: • Surface anchored manganese selenide quantum dots (MnSe QDs) have been synthesized via a physico-chemical reduction route. • Time resolved luminescence spectra of the QDs have displayed bi-exponential decay trend. • Thioglycolic acid (TGA) coated QDs exhibited shorter lifetime as compared to sodium dodecyl sulfo-succinate (SDS) coated ones. • Upon BSA conjugation, the average life time is four-fold enhanced in MnSe-SDS QDs. • An efficient FRET process has been revealed in BSA conjugated TGA coated MnSe QDs.

HOT 2012

DEFF Research Database (Denmark)

Lund, Henriette Romme

Undersøgelse af, hvad der er hot - og hvad der burde være hot på læseområdet med 21 læsekyndige. Undersøgelsen er gennemført siden 2010. HOT-undersøgelsen er foretaget af Nationalt Videncenter for Læsning - Professionshøjskolerne i samarb. med Dansklærerforeningen......Undersøgelse af, hvad der er hot - og hvad der burde være hot på læseområdet med 21 læsekyndige. Undersøgelsen er gennemført siden 2010. HOT-undersøgelsen er foretaget af Nationalt Videncenter for Læsning - Professionshøjskolerne i samarb. med Dansklærerforeningen...

Stress relaxation of bi-disperse polystyrene melts

DEFF Research Database (Denmark)

Hengeller, Ludovica; Huang, Qian; Dorokhin, Andriy

2016-01-01

We present start-up of uniaxial extension followed by stress relaxation experiments of a bi-disperse 50 % by weight blend of 95k and 545k molecular weight polystyrene. We also show, for comparison, stress relaxation measurements of the polystyrene melts with molecular weight 95k and 545k, which...... are the components of the bi-disperse melt. The measurements show three separated relaxation regimes: a fast regime, a transition regime, and a slow regime. In the fast regime, the orientation of the long chains is frozen and the stress relaxation is due to stretch relaxation of the short chains primarily....... Conversely in the slow regime, the long chains have retracted and undergo relaxation of orientation in fully relaxed short chains....

New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

Science.gov (United States)

Aivazian, Grant; Sun, Dong; Jones, Aaron; Ross, Jason; Yao, Wang; Cobden, David; Xu, Xiaodong

2012-02-01

The remarkable electrical and optical properties of graphene make it a promising material for new optoelectronic applications. However, one important, but so far unexplored, property is the role of hot carriers in charge and energy transport at graphene interfaces. Here we investigate the photocurrent (PC) dynamics at a tunable graphene pn junction using ultrafast scanning PC microscopy. Pump-probe measurements show a temperature dependent relaxation time of photogenerated carriers that increases from 1.5ps at 290K to 4ps at 20K; while the amplitude of the PC is independent of the lattice temperature. These observations imply that it is hot carriers, not phonons, which dominate ultrafast energy transport. Gate dependent measurements show many interesting features such as pump induced saturation, enhancement, and sign reversal of probe generated PC. These observations reveal that the underlying PC mechanism is a combination of the thermoelectric and built-in electric field effects. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (˜500 GHz) for graphene-based photodetectors.

Idiosyncratic reality claims, relaxation dispositions, and ABC relaxation theory: happiness, literal christianity, miraculous powers, metaphysics, and the paranormal.

Science.gov (United States)

Smith, Jonathan C; Karmin, Aaron D

2002-12-01

This study examined idiosyncratic reality claims, that is, irrational or paranormal beliefs often claimed to enhance relaxation and happiness and reduce stress. The Smith Idiosyncratic Reality Claims Inventory and the Smith Relaxation Dispositions Inventory (which measures relaxation and stress dispositions, or enduring states of mind frequently associated with relaxation or stress) were given to 310 junior college student volunteers. Principal components factor analysis with varimax rotation identified five idiosyncratic reality claim factors: belief in Literal Christianity; Magic; Space Aliens: After Death experiences; and Miraculous Powers of Meditation, Prayer, and Belief. No factor correlated with increased relaxation dispositions Peace, Energy, or Joy, or reduced dispositional somatic stress, worry, or negative emotion on the Smith Relaxation Dispositions Inventory. It was concluded that idiosyncratic reality claims may not be associated with reported relaxation, happiness, or stress. In contrast, previous research strongly supported self-affirming beliefs with few paranormal assumptions display such an association.

Anomalous enthalpy relaxation in vitreous silica

DEFF Research Database (Denmark)

Yue, Yuanzheng

2015-01-01

scans. It is known that the liquid fragility (i.e., the speed of the viscous slow-down of a supercooled liquid at its Tg during cooling) has impact on enthalpy relaxation in glass. Here, we find that vitreous silica (as a strong system) exhibits striking anomalies in both glass transition and enthalpy...... relaxation compared to fragile oxide systems. The anomalous enthalpy relaxation of vitreous silica is discovered by performing the hyperquenching-annealing-calorimetry experiments. We argue that the strong systems like vitreous silica and vitreous Germania relax in a structurally cooperative manner, whereas...... the fragile ones do in a structurally independent fashion. We discuss the origin of the anomalous enthalpy relaxation in the HQ vitreous silica....

Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Khurgin, Jacob B., E-mail: jakek@jhu.edu [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Bajaj, Sanyam; Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

2015-12-28

Longitudinal optical (LO) phonons in GaN generated in the channel of high electron mobility transistors (HEMT) are shown to undergo nearly elastic scattering via collisions with hot electrons. The net result of these collisions is the diffusion of LO phonons in the Brillouin zone causing reduction of phonon and electron temperatures. This previously unexplored diffusion mechanism explicates how an increase in electron density causes reduction of the apparent lifetime of LO phonons, obtained from the time resolved Raman studies and microwave noise measurements, while the actual decay rate of the LO phonons remains unaffected by the carrier density. Therefore, the saturation velocity in GaN HEMT steadily declines with increased carrier density, in a qualitative agreement with experimental results.

Dynamics of the α-relaxation in glass-forming polymers. Study by neutron scattering and relaxation techniques

Science.gov (United States)

Colmenero, J.

1993-12-01

The dynamics of the α-relaxation in three different polymeric systems, poly(vinyl methyl ether) (PVME), poly(vinyl chloride) (PVC) and poly(bisphenol A, 2-hydroxypropylether) (PH) has been studied by means of relaxation techniques and quasielastic neutron scattering (backscattering spectrometers IN10 and IN13 at the ILL-Grenoble). By using these techniques we have covered a wide time scale ranging from mesoscopic to macroscopic times (10 -10 -10 1 s). For analyzing the experimental data we have developed a phenomenological procedure in the frequency domain based on the Havriliak-Negami relaxation function, which in fact implies a Kohlrausch-Williams-Watts relaxation function in the time domain. The results obtained indicate that the dynamics of the α-relaxation in a wide time scale shows a clear non-Debye behaviour. The shape of the relaxation functions is found to be similar for the different techniques used and independent of temperature and momentum transfer ( Q). Moreover, the characteristic relaxation times deduced from the fitting of the experimental data can also be described using only one Vogel-Fulcher functional form. Besides we found that the Q-dependence of the relaxation times obtained by QENS is given by a power law, τ( Q) ∞ Q- n ( n>2), n being dependent on the system, and that the Q-behaviour and the non-Debye behaviour are directly correlated. In the case of PVC, time of flight (TOF) neutron scattering experiments confirm these results in a shorter time scale (2×10 -11 -2× 10 -12 s). Moreover, TOF results also suggest the possibility of interpreting the “fast process” usually detected in glass-forming systems as a Debye-like short regime of the α-relaxation.

The relationships between suggestibility, influenceability, and relaxability.

Science.gov (United States)

Polczyk, Romuald; Frey, Olga; Szpitalak, Malwina

2013-01-01

This research explores the relationships between relaxability and various aspects of suggestibility and influenceability. The Jacobson Progressive Muscle Relaxation procedure was used to induce relaxation. Tests of direct suggestibility, relating to the susceptibility of overt suggestions, and indirect suggestibility, referring to indirect hidden influence, as well as self-description questionnaires on suggestibility and the tendency to comply were used. Thayer's Activation-Deactivation Adjective Check List, measuring various kinds of activation and used as a pre- and posttest, determined the efficacy of the relaxation procedure. Indirect, direct, and self-measured suggestibility proved to be positively related to the ability to relax, measured by Thayer's subscales relating to emotions. Compliance was not related to relaxability. The results are discussed in terms of the aspects of relaxation training connected with suggestibility.

Relaxation of Anisotropic Glasses

DEFF Research Database (Denmark)

Deubener, Joachim; Martin, Birgit; Wondraczek, Lothar

2004-01-01

. When the load was removed at room temperature a permanent optical anisotropy (birefringence) was observed only perpendicular to cylinder axis and the pressure direction indicating complete elimination of thermal stresses. Relaxation of structural anisotropy was studied from reheating experiments using...... the energy release, thermo-mechanical and optical relaxation behaviour are drawn....

Stress relaxation in viscous soft spheres.

Science.gov (United States)

Boschan, Julia; Vasudevan, Siddarth A; Boukany, Pouyan E; Somfai, Ellák; Tighe, Brian P

2017-10-04

We report the results of molecular dynamics simulations of stress relaxation tests in athermal viscous soft sphere packings close to their unjamming transition. By systematically and simultaneously varying both the amplitude of the applied strain step and the pressure of the initial condition, we access both linear and nonlinear response regimes and control the distance to jamming. Stress relaxation in viscoelastic solids is characterized by a relaxation time τ* that separates short time scales, where viscous loss is substantial, from long time scales, where elastic storage dominates and the response is essentially quasistatic. We identify two distinct plateaus in the strain dependence of the relaxation time, one each in the linear and nonlinear regimes. The height of both plateaus scales as an inverse power law with the distance to jamming. By probing the time evolution of particle velocities during relaxation, we further identify a correlation between mechanical relaxation in the bulk and the degree of non-affinity in the particle velocities on the micro scale.

Relaxation techniques for stress

Science.gov (United States)

... raise your heart rate. This is called the stress response. Relaxation techniques can help your body relax and lower your blood pressure ... also many other types of breathing techniques you can learn. In many cases, you do not need much ... including those that cause stress. Meditation has been practiced for thousands of years, ...

The Effects of Suggestibility on Relaxation.

Science.gov (United States)

Rickard, Henry C.; And Others

1985-01-01

Selected undergraduates (N=32) on the basis of Creative Imagination Scale scores and randomly assigned high and low suggestibility subjects to progressive relaxation (PR) and suggestions of relaxation (SR) training modes. Results revealed a significant pre-post relaxation effect, and main efffects for both suggestibility and training mode. (NRB)

Magneto-dependent stress relaxation of magnetorheological gels

KAUST Repository

Xu, Yangguang; Liu, Taixiang; Liao, G J; Lubineau, Gilles

2017-01-01

The stress relaxation behaviors of magnetorheological (MR) gels under stepwise shear loading are systematically investigated. The particle-enhanced effect, the magneto-induced effect, and the temperature-enhanced effect on the stress relaxation of MR gels are discussed. For further analysis of the magneto-induced stress relaxation mechanism in MR gels, a phenomenological model is established to describe the stress relaxation behavior of the matrix and the magnetic particle chains. All characteristic parameters introduced in the model, i.e. relaxation time, instantaneous modulus, and stable modulus, have well-defined physical meanings and are fitted based on the experimental results. The influence of each parameter on the macroscopic response is discussed and it is found that the relaxation stress induced by the magneto-mechanical coupling effect plays an important role in the stress relaxation process of MR gels.

Magneto-dependent stress relaxation of magnetorheological gels

KAUST Repository

Xu, Yangguang

2017-09-01

The stress relaxation behaviors of magnetorheological (MR) gels under stepwise shear loading are systematically investigated. The particle-enhanced effect, the magneto-induced effect, and the temperature-enhanced effect on the stress relaxation of MR gels are discussed. For further analysis of the magneto-induced stress relaxation mechanism in MR gels, a phenomenological model is established to describe the stress relaxation behavior of the matrix and the magnetic particle chains. All characteristic parameters introduced in the model, i.e. relaxation time, instantaneous modulus, and stable modulus, have well-defined physical meanings and are fitted based on the experimental results. The influence of each parameter on the macroscopic response is discussed and it is found that the relaxation stress induced by the magneto-mechanical coupling effect plays an important role in the stress relaxation process of MR gels.

Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

International Nuclear Information System (INIS)

Parui, Subir; Atxabal, Ainhoa; Ribeiro, Mário; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2015-01-01

We show the operation of a Cu/Al 2 O 3 /Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 ± 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ∼2 × 10 −13  A, an ON/OFF ratio of ∼10 5 , and an equivalent subthreshold swing of ∼96 mV/dec at low temperatures, which are suitable values for potential high frequency devices

Hot Flashes

Science.gov (United States)

Hot flashes Overview Hot flashes are sudden feelings of warmth, which are usually most intense over the face, neck and chest. Your skin might redden, as if you're blushing. Hot flashes can also cause sweating, and if you ...

Sandpile model for relaxation in complex systems

International Nuclear Information System (INIS)

Vazquez, A.; Sotolongo-Costa, O.; Brouers, F.

1997-10-01

The relaxation in complex systems is, in general, nonexponential. After an initial rapid decay the system relaxes slowly following a long time tail. In the present paper a sandpile moderation of the relaxation in complex systems is analysed. Complexity is introduced by a process of avalanches in the Bethe lattice and a feedback mechanism which leads to slower decay with increasing time. In this way, some features of relaxation in complex systems: long time tails relaxation, aging, and fractal distribution of characteristic times, are obtained by simple computer simulations. (author)

Relaxation Time of High-Density Amorphous Ice

Science.gov (United States)

Handle, Philip H.; Seidl, Markus; Loerting, Thomas

2012-06-01

Amorphous water plays a fundamental role in astrophysics, cryoelectron microscopy, hydration of matter, and our understanding of anomalous liquid water properties. Yet, the characteristics of the relaxation processes taking place in high-density amorphous ice (HDA) are unknown. We here reveal that the relaxation processes in HDA at 110-135 K at 0.1-0.2 GPa are of collective and global nature, resembling the alpha relaxation in glassy material. Measured relaxation times suggest liquid-like relaxation characteristics in the vicinity of the crystallization temperature at 145 K. By carefully relaxing pressurized HDA for several hours at 135 K, we produce a state that is closer to the ideal glass state than all HDA states discussed so far in literature.

Relaxation in x-space magnetic particle imaging.

Science.gov (United States)

Croft, Laura R; Goodwill, Patrick W; Conolly, Steven M

2012-12-01

Magnetic particle imaging (MPI) is a new imaging modality that noninvasively images the spatial distribution of superparamagnetic iron oxide nanoparticles (SPIOs). MPI has demonstrated high contrast and zero attenuation with depth, and MPI promises superior safety compared to current angiography methods, X-ray, computed tomography, and magnetic resonance imaging angiography. Nanoparticle relaxation can delay the SPIO magnetization, and in this work we investigate the open problem of the role relaxation plays in MPI scanning and its effect on the image. We begin by amending the x-space theory of MPI to include nanoparticle relaxation effects. We then validate the amended theory with experiments from a Berkeley x-space relaxometer and a Berkeley x-space projection MPI scanner. Our theory and experimental data indicate that relaxation reduces SNR and asymmetrically blurs the image in the scanning direction. While relaxation effects can have deleterious effects on the MPI scan, we show theoretically and experimentally that x-space reconstruction remains robust in the presence of relaxation. Furthermore, the role of relaxation in x-space theory provides guidance as we develop methods to minimize relaxation-induced blurring. This will be an important future area of research for the MPI community.

Hair Dye and Hair Relaxers

Science.gov (United States)

... For Consumers Consumer Information by Audience For Women Hair Dye and Hair Relaxers Share Tweet Linkedin Pin it More sharing ... products. If you have a bad reaction to hair dyes and relaxers, you should: Stop using the ...

Ultrahigh energy gamma rays: carriers of cosmological information

International Nuclear Information System (INIS)

Aharonian, F.A.; Atoyan, A.M.

1985-01-01

Observational data being the basis of contemporary cosmological models are not numerous: Hubble law of redshift for galaxies, element abundances, and observation of cosmic microwave background radiation (MBR). The significance of MBR discovery predicted in the Big-Band model is particularly stressed. Radio astronomical measurements give an information on MBR only near the Earth. Experimental confirmation of evolution of MBR, i.e., its probing in remote epochs, might obviously present a direct verification of the hypothesis of hot expanding Universe. The carriers of similar cosmological information should be particles which, firstly, effectively interact with MBR, and secondly, make it possible to identify unambiguously the epoch of interaction. A possibility to verify a number of cosmological hypotheses by searching the cutoffs in spectra of ultrahigh energy gamma-rays (UHEGR) from extragalactic sources is discussed

HOT 2011

DEFF Research Database (Denmark)

Lund, Henriette Romme

En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager 21 læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet.......En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager 21 læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet....

Natural lipids in nanostructured lipid carriers and its cytotoxicity

Science.gov (United States)

Lima, Paula A.; Rampazo, Caroline A. D.; Costa, Amanda F.; Rodrigues, Tiago; Watashi, Carolina M.; Durán, Nelson

2017-06-01

Nanostructured lipid carriers (NLCs) are active carrier systems which modulate the sustained release of actives and protect unstable compounds against degradation. NLCs can also protect skin from sun light, due to its particulates nature, which gives them intrinsic scattering properties. In this work, we present the preparation of NLCs using natural lipids and its cytotoxicity profile. It was used a vegetal butter with melting point (m.p.) ~32-40°C, an animal wax (m.p. 35-40°C) and a vegetal oil (boiling point ~120-150°C). NLCs were prepared by hot high pressure homogenization method and particles were characterized by average size (Zave), polydispersity index (PDI) and zeta potential (PZ) (Fig.1). The thermal behavior of the NLCs was studied using Differential Scanning Calorimetry (DSC). All the formulations were followed up for 60 days in order to evaluate their stability. NLCs exhibited a Zave around 150-200 nm, PDI less than 0.2 and PZ varying from -25 to -40 mV. The m.p. for the lyophilized NLCs was about 40-56°C. Cytotoxicity of the formulations were evaluated for human keratinocytes (HaCaT) and melanocytes (Melan-A) in the exponential growth phase. Cell viability was used as indicator of cytotoxicity and determined after 4 days of culture by MTT assay. It was found that the NLC formulations were not toxic against HaCaT and Melan-A cells. Results showed that the NLCs produced are potential carriers for nanocosmetics and sunscreen products.

Significant relaxation of residual negative carrier in polar Alq3 film directly detected by high-sensitivity photoemission

Science.gov (United States)

Kinjo, Hiroumi; Lim, Hyunsoo; Sato, Tomoya; Noguchi, Yutaka; Nakayama, Yasuo; Ishii, Hisao

2016-02-01

Tris(8-hydroxyquinoline)aluminum (Alq3) has been widely applied as a good electron-injecting layer (EIL) in organic light-emitting diodes. High-sensitivity photoemission measurement revealed a clear photoemission by visible light, although its ionization energy is 5.7 eV. This unusual photoemission is ascribed to Alq3 anions captured by positive polarization charges. The observed electron detachment energy of the anion was about 1 eV larger than the electron affinity reported by inverse photoemission. This difference suggests that the injected electron in the Alq3 layer is energetically relaxed, leading to the reduction in injection barrier. This nature is one of the reasons why Alq3 worked well as the EIL.

14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors

CERN Document Server

Saraniti, M; Nonequilibrium Carrier Dynamics in Semiconductors

2006-01-01

International experts gather every two years at this established conference to discuss recent developments in theory and experiment in non-equilibrium transport phenomena. These developments have been the driving force behind the spectacular advances in semiconductor physics and devices over the last few decades. Originally known as "Hot Carriers in Semiconductors," the 14th conference in the series covered a wide spectrum of traditional topics dealing with non-equilibrium phenomena, ranging from quantum transport to optical phenomena in mesoscopic and nano-scale structures. Particular attention was given this time to emerging areas of this rapidly evolving field, with many sessions covering terahertz devices, high field transport in nitride semiconductors, spintronics, molecular electronics, and bioelectronics applications.

Relaxation of synchronization on complex networks.

Science.gov (United States)

Son, Seung-Woo; Jeong, Hawoong; Hong, Hyunsuk

2008-07-01

We study collective synchronization in a large number of coupled oscillators on various complex networks. In particular, we focus on the relaxation dynamics of the synchronization, which is important from the viewpoint of information transfer or the dynamics of system recovery from a perturbation. We measure the relaxation time tau that is required to establish global synchronization by varying the structural properties of the networks. It is found that the relaxation time in a strong-coupling regime (K>Kc) logarithmically increases with network size N , which is attributed to the initial random phase fluctuation given by O(N-1/2) . After elimination of the initial-phase fluctuation, the relaxation time is found to be independent of the system size; this implies that the local interaction that depends on the structural connectivity is irrelevant in the relaxation dynamics of the synchronization in the strong-coupling regime. The relaxation dynamics is analytically derived in a form independent of the system size, and it exhibits good consistency with numerical simulations. As an application, we also explore the recovery dynamics of the oscillators when perturbations enter the system.

Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Atxabal, Ainhoa; Ribeiro, Mário; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country (Spain); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country (Spain)

2015-11-02

We show the operation of a Cu/Al{sub 2}O{sub 3}/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 ± 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ∼2 × 10{sup −13} A, an ON/OFF ratio of ∼10{sup 5}, and an equivalent subthreshold swing of ∼96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.

Evolving fuzzy rules for relaxed-criteria negotiation.

Science.gov (United States)

Sim, Kwang Mong

2008-12-01

In the literature on automated negotiation, very few negotiation agents are designed with the flexibility to slightly relax their negotiation criteria to reach a consensus more rapidly and with more certainty. Furthermore, these relaxed-criteria negotiation agents were not equipped with the ability to enhance their performance by learning and evolving their relaxed-criteria negotiation rules. The impetus of this work is designing market-driven negotiation agents (MDAs) that not only have the flexibility of relaxing bargaining criteria using fuzzy rules, but can also evolve their structures by learning new relaxed-criteria fuzzy rules to improve their negotiation outcomes as they participate in negotiations in more e-markets. To this end, an evolutionary algorithm for adapting and evolving relaxed-criteria fuzzy rules was developed. Implementing the idea in a testbed, two kinds of experiments for evaluating and comparing EvEMDAs (MDAs with relaxed-criteria rules that are evolved using the evolutionary algorithm) and EMDAs (MDAs with relaxed-criteria rules that are manually constructed) were carried out through stochastic simulations. Empirical results show that: 1) EvEMDAs generally outperformed EMDAs in different types of e-markets and 2) the negotiation outcomes of EvEMDAs generally improved as they negotiated in more e-markets.

Stress relaxation under cyclic electron irradiation

International Nuclear Information System (INIS)

Bystrov, L.N.; Reznitskij, M.E.

1990-01-01

The kinetics of deformation process in a relaxating sample under 2 MeV electron cyclic irradiation was studied experimentally. The Al-Mg alloys with controllable and different (in dislocation density precipitate presence and their character) structure were used in experiments. It was established that after the beam was switched on the deformation rate increased sharply and then, during prolonged irradiation, in a gradual manner. After the switching-off the relaxation rate decreases by jumps up to values close to extrapolated rates of pre-radiation relaxation. The exhibition of these effects with radiation switching-off and switchin-on is dependent on the initial rate of thermal relaxation, the test temperature, the preliminary cold deformation and the dominating deformation dislocation mechanism. The preliminary cold deformation and test temperature elevation slightly decrease the effect of instantaneous relaxation acceleration with the irradiation switch-on. 17 refs., 5 figs

Energy relaxation in IR laser excited Hg{sub 1-x}Cd{sub x}Te

Energy Technology Data Exchange (ETDEWEB)

Storebo, A K; Brudevoll, T [FFI - Norwegian Defence Research Establishment, PO Box 25, NO-2027 Kjeller, Norway NTNU (Norwegian University of Science and Technology) (Norway); Olsen, O; Norum, O C [Department of Physics and Department of Electronics and Telecommunications NO-7491 Trondheim (Norway); Breivik, M, E-mail: asta-katrine.storebo@ffi.n [Department of Electronics and Telecommunications NO-7491 Trondheim (Norway)

2009-11-15

IR laser excitation of Hg{sub l-x}Cd{sub x}Te by low-fluence femtosecond and high fluence microsecond pulses was explored for the technologically important alloy fractions x {approx} 0.2 and x {approx} 0.28. We have used first principles (LAPW) electronic structure calculations and finite element modelling, supported by Monte Carlo simulation for the description of femtosecond pulse carrier relaxation and the transport parameters. Laser wavelengths considered were 6.4 - 10.6 {mu}m for x {approx} 0.2 and 3.8 - 4.8 {mu}m for x {approx} 0.28, with an incident 1 microsecond pulse fluence of 2 J/cm{sup 2}. Many energy transfer mechanisms are invoked due to the long timescales of the microsecond pulses, and a main challenge is therefore to elucidate how these interplay in situations away from thermal equilibrium. Mechanisms studied include one- and two-photon absorption (OPA and TPA) across the band gap, inter-valence band absorption (IVA) between light- and heavy hole bands, electron-hole recombination/impact ionization, band gap renormalisation, intra-band free carrier absorption (FCA), excess carrier temperatures, non-equilibrium phonon generation, and refractive index changes. In the high fluence case, lattice temperatures evolve considerably during the laser pulse in response to the heated carriers. The chosen photon energies lie just above the band gap at the starting lattice temperature of 77 K, and nonlinear effects therefore dominate as the material heats up and the band gap begins to exceed the photon energy. Because of the low photon energy we must rely on Auger recombination, inter-valence band absorption and free carrier absorption to heat the carrier plasma. Although some Hg{sub l-x}Cd{sub x}Te material parameters are now relatively well known, existing data for many of the processes are inadequate for cases far away from thermal equilibrium. Furthermore, the role of Auger recombination in relation to non-intrinsic recombination has been a matter of debate

In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy.

Science.gov (United States)

Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

2015-12-18

In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells.

Momentum constraint relaxation

International Nuclear Information System (INIS)

Marronetti, Pedro

2006-01-01

Full relativistic simulations in three dimensions invariably develop runaway modes that grow exponentially and are accompanied by violations of the Hamiltonian and momentum constraints. Recently, we introduced a numerical method (Hamiltonian relaxation) that greatly reduces the Hamiltonian constraint violation and helps improve the quality of the numerical model. We present here a method that controls the violation of the momentum constraint. The method is based on the addition of a longitudinal component to the traceless extrinsic curvature A ij -tilde, generated by a vector potential w i , as outlined by York. The components of w i are relaxed to solve approximately the momentum constraint equations, slowly pushing the evolution towards the space of solutions of the constraint equations. We test this method with simulations of binary neutron stars in circular orbits and show that it effectively controls the growth of the aforementioned violations. We also show that a full numerical enforcement of the constraints, as opposed to the gentle correction of the momentum relaxation scheme, results in the development of instabilities that stop the runs shortly

Thermodynamic scaling of α-relaxation time and viscosity stems from the Johari-Goldstein β-relaxation or the primitive relaxation of the coupling model.

Science.gov (United States)

Ngai, K L; Habasaki, J; Prevosto, D; Capaccioli, S; Paluch, Marian

2012-07-21

By now it is well established that the structural α-relaxation time, τ(α), of non-associated small molecular and polymeric glass-formers obey thermodynamic scaling. In other words, τ(α) is a function Φ of the product variable, ρ(γ)/T, where ρ is the density and T the temperature. The constant γ as well as the function, τ(α) = Φ(ρ(γ)/T), is material dependent. Actually this dependence of τ(α) on ρ(γ)/T originates from the dependence on the same product variable of the Johari-Goldstein β-relaxation time, τ(β), or the primitive relaxation time, τ(0), of the coupling model. To support this assertion, we give evidences from various sources itemized as follows. (1) The invariance of the relation between τ(α) and τ(β) or τ(0) to widely different combinations of pressure and temperature. (2) Experimental dielectric and viscosity data of glass-forming van der Waals liquids and polymer. (3) Molecular dynamics simulations of binary Lennard-Jones (LJ) models, the Lewis-Wahnström model of ortho-terphenyl, 1,4 polybutadiene, a room temperature ionic liquid, 1-ethyl-3-methylimidazolium nitrate, and a molten salt 2Ca(NO(3))(2)·3KNO(3) (CKN). (4) Both diffusivity and structural relaxation time, as well as the breakdown of Stokes-Einstein relation in CKN obey thermodynamic scaling by ρ(γ)/T with the same γ. (5) In polymers, the chain normal mode relaxation time, τ(N), is another function of ρ(γ)/T with the same γ as segmental relaxation time τ(α). (6) While the data of τ(α) from simulations for the full LJ binary mixture obey very well the thermodynamic scaling, it is strongly violated when the LJ interaction potential is truncated beyond typical inter-particle distance, although in both cases the repulsive pair potentials coincide for some distances.

Overall conductivity and NCL-type relaxation behavior in nanocrystalline sodium peroxide Na{sub 2}O{sub 2}—Consequences for Na-oxygen batteries

Energy Technology Data Exchange (ETDEWEB)

Dunst, Andreas; Sternad, Michael; Wilkening, Martin, E-mail: wilkening@tugraz.at

2016-09-15

Highlights: • Na{sub 2}O{sub 2} turned out to be a poor electrical conductor. • Total conductivity of nanocrystalline Na{sub 2}O{sub 2} measured slightly above room temperature is in the order of 10{sup −15} S cm{sup −1}. • Activation energies of micro- and nanocrystalline Na{sub 2}O{sub 2} are in the order of 1 eV. • At low temperatures nearly constant loss behavior showed up pointing to locally restricted electrical relaxation processes. - Abstract: Metal air batteries are considered as promising candidates for room-temperature batteries with high-energy densities. On discharge, atmospheric oxygen is reduced at the positive electrode which, in the ideal case, forms the discharge products in a reversible cell reaction. In Na-O{sub 2} batteries upon discharge either sodium peroxide (Na{sub 2}O{sub 2}) or sodium superoxide (NaO{sub 2}) is reported to be formed. So far, the charge carrier transport remains relatively unexplored but is expected to crucially determine the efficiency of such energy storage systems. Na{sub 2}O{sub 2} is predicted to be an electrical insulator wherein the transport presumably is determined by very slow hopping processes. Understanding the basic fundamental properties of the overall charge carrier transport, including also nanostructured forms of Na{sub 2}O{sub 2}, is key to developing high-energy metal oxygen batteries. The present study answers the question how overall, i.e., total, conductivity changes when going from microcrystalline to nanocrystalline, defect-rich Na{sub 2}O{sub 2}. Nanocrystalline Na{sub 2}O{sub 2} was prepared via a top-down approach, viz by high-energy ball milling. Milling does not only shrink the average crystallite diameter but also introduces a large amount of defects which are anticipated to influence total conductivity. It turned out that even after vigorous mechanical treatment the conductivity of the sample is only increased by ca. one order of magnitude. The activation energy remains almost

Relaxed states with plasma flow

International Nuclear Information System (INIS)

Avinash, K.; Taylor, J.B.

1991-01-01

In the theory of relaxation, a turbulent plasma reaches a state of minimum energy subject to constant magnetic helicity. In this state the plasma velocity is zero. Attempts have been made by introducing a number of different constraints, to obtain relaxed states with plasma flow. It is shown that these alternative constraints depend on two self-helicities, one for ions, and one for electrons. However, whereas there are strong arguments for the effective invariance of the original magnetic-helicity, these arguments do not apply to the self-helicities. Consequently the existence of relaxed states with flow remains in doubt. (author)

Dielectric relaxations and conduction mechanisms in polyether-clay composite polymer electrolytes under high carbon dioxide pressure.

Science.gov (United States)

Kitajima, Shunsuke; Bertasi, Federico; Vezzù, Keti; Negro, Enrico; Tominaga, Yoichi; Di Noto, Vito

2013-10-21

The composite material P(EO/EM)-Sa consisting of synthetic saponite (Sa) dispersed in poly[ethylene oxide-co-2-(2-methoxyethoxy)ethyl glycidyl ether] (P(EO/EM)) is studied by "in situ" measurements using broadband electrical spectroscopy (BES) under pressurized CO2 to characterize the dynamic behavior of conductivity and the dielectric relaxations of the ion host polymer matrix. It is revealed that there are three dielectric relaxation processes associated with: (I) the dipolar motions in the short oxyethylene side chains of P(EO/EM) (β); and (II) the segmental motion of the main chains comprising the polyether components (αfast, αslow). αslow is attributed to the slow α-relaxation of P(EO/EM) macromolecules, which is hindered by the strong coordination interactions with the ions. Two conduction processes are observed, σDC and σID, which are attributed, respectively, to the bulk conductivity and the interdomain conductivity. The temperature dependence of conductivity and relaxation processes reveals that αfast and αslow are strongly correlated with σDC and σID. The "in situ" BES measurements under pressurized CO2 indicate a fast decrease in σDC at the initial CO2 treatment time resulting from the decrease in the concentration of polyether-M(n+) complexes, which is driven by the CO2 permeation. The relaxation frequency (fR) of αslow at the initial CO2 treatment time increases and shows a steep rise with time with the same behavior of the αfast mode. It is demonstrated that the interactions between polyether chains of P(EO/EM) and cations in the polymer electrolyte layers embedded in Sa are probably weakened by the low permittivity of CO2 (ε = 1.08). Thus, the formation of ion pairs in the polymer electrolyte domains of P(EO/EM)-Sa occurs, with a corresponding reduction in the concentration of ion carriers.

HOT 2014

DEFF Research Database (Denmark)

Lund, Henriette

Undersøgelse af, hvad der er hot - og hvad der burde være hot på læseområdet med 21 læsekyndige. Undersøgelsen er gennemført siden 2010. HOT-undersøgelsen er foretaget af Nationalt Videncenter for Læsning - Professionshøjskolerne i samarb. med Dansklærerforeningen...

Low-complexity Joint Sub-carrier Phase Noise Compensation for Digital Multi-carrier Systems

DEFF Research Database (Denmark)

Yankov, Metodi Plamenov; Barletta, Luca; Zibar, Darko

2017-01-01

Joint sub-carrier phase noise processing is proposed which recovers the SNR penalty related to decreased sub-carrier baudrate w.r.t. single carrier systems. The method enables digital sub-banding to be safely employed for nonlinear mitigation for modulation formats of up to 256-QAM.......Joint sub-carrier phase noise processing is proposed which recovers the SNR penalty related to decreased sub-carrier baudrate w.r.t. single carrier systems. The method enables digital sub-banding to be safely employed for nonlinear mitigation for modulation formats of up to 256-QAM....

Vibrational relaxation induced population inversions in laser pumped polyatomic molecules

International Nuclear Information System (INIS)

Shamah, I.; Flynn, G.; Columbia Univ., New York

1981-01-01

Conditions for population inversion in laser pumped polyatomic molecules are described. For systems which exhibit metastable vibrational population distributions, large, long lived inversions are possible even when the vibrational modes are strongly coupled by rapid collisional vibration-vibration (V-V) energy transfer. Overtone states of a hot mode are found to invert with respect to fundamental levels of a cold mode even at V-V steady state. Inversion persists for a V-T/R relaxation time. A gain of 4 m -1 for the 2ν 3 → ν 2 transition in CH 3 F (lambda approx. 15.9 μ) was found assuming a spontaneous emission lifetime of 10 s for this transition. General equations are derived which can be used to determine the magnitude of population inversion in any laser pumped, vibrationally metastable, polyatomic molecule. A discussion of factors controlling the population maxima of different vibrational states in optically pumped, V-V equilibrated metastable polyatomics is also given. (orig./WL)

On aggregation of relaxed T-indistinguishability operators

Energy Technology Data Exchange (ETDEWEB)

Fuster-Parra, P.

2017-07-01

The notion of T -indistinguishability operator was introduced by E. Trillas in [7] with the aim of fuzzifying the classical (crisp) notion of equivalence relation. Relaxed metrics and indistinguishability operators are closely related. Indeed, in [1] it has been stated that the logical counterpart for relaxed metrics is, in some sense, a generalized indistinguishability operator (relaxed T -indistinguishability operator). Notice that the notion of T -indistinguishability operator is retrieved as a particular case of relaxed T -indistinguishability operator whenever the relaxed T - indistinguishability operator satisfies also the reflexivity. In fact, a relaxed indistinguishability operator is a indistinguishability operator if and only if it holds the reflexivity. The same occurs when we consider T -indistinguishability operator that separates points. Several authors have studied the aggregation of some classes of fuzzy relations (see [3, 4, 5, 6]), where it is stated that transitivity is one of the most important properties of a fuzzy relation. In [5] a study of aggregation of T-indistinguishability operators is presented, motivated by this work the aim of this study is to analyze the case of aggregating relaxed T-indistinguishability operators. (Author)

Nuclear spin-lattice relaxation in carbon nanostructures

Energy Technology Data Exchange (ETDEWEB)

Panich, A.M., E-mail: pan@bgu.ac.i [Department of Physics, Ben-Gurion University of the Negev, P.O. Box 653, Beer Sheva 84105 (Israel); Sergeev, N.A. [Institute of Physics, University of Szczecin, 70-451 Szczecin (Poland)

2010-04-15

Interpretation of nuclear spin-lattice relaxation data in the carbon nanostructures is usually based on the analysis of fluctuations of dipole-dipole interactions of nuclear spins and anisotropic electron-nuclear interactions responsible for chemical shielding, which are caused by molecular dynamics. However, many nanocarbon systems such as fullerene and nanotube derivatives, nanodiamonds and carbon onions reveal noticeable amount of paramagnetic defects with unpaired electrons originating from dangling bonds. The interaction between nuclear and electron spins strongly influences the nuclear spin-lattice relaxation, but usually is not taken into account, thus the relaxation data are not correctly interpreted. Here we report on the temperature dependent NMR spectra and spin-lattice relaxation measurements of intercalated fullerenes C{sub 60}(MF{sub 6}){sub 2} (M=As and Sb), where nuclear relaxation is caused by both molecular rotation and interaction between nuclei and unpaired electron spins. We present a detailed theoretical analysis of the spin-lattice relaxation data taking into account both these contributions. Good agreement between the experimental data and calculations is obtained. The developed approach would be useful in interpreting the NMR relaxation data in different nanostructures and their intercalation compounds.

Carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool

International Nuclear Information System (INIS)

Cai, Yu; Sha, Shuang

2016-01-01

This paper proposes a new carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool used in a cylindrical borehole environment during oil-based mud drilling processes. The new tool is an orthogonal frequency division multiplexing access-based contactless multi-measurand detection tool. The tool can measure formation resistivity in different azimuthal angles and elevational depths. It can measure many more measurands simultaneously in a specified bandwidth than the legacy frequency division multiplexing multi-measurand tool without a channel-select filter while avoiding inter-carrier interference. The paper also shows that formation resistivity is not sensitive to frequency in certain frequency bands. The average resistivity collected from N subcarriers can increase the measurement of the signal-to-noise ratio (SNR) by N times given no amplitude clipping in the current-injection electrode. If the clipping limit is taken into account, with the phase rotation of each single carrier, the amplitude peak-to-average ratio can be reduced by 3 times, and the SNR can achieve a 9/ N times gain over the single-carrier system. The carrier-interleaving technique is also introduced to counter the carrier frequency offset (CFO) effect, where the CFO will cause inter-pad interference. A qualitative analysis and simulations demonstrate that block-interleaving performs better than tone-interleaving when coping with a large CFO. The theoretical analysis also suggests that increasing the subcarrier number can increase the measurement speed or enhance elevational resolution without sacrificing receiver performance. The complex orthogonal multi-pad multi-carrier resistivity logging tool, in which all subcarriers are complex signals, can provide a larger available subcarrier pool than other types of transceivers. (paper)

Nonequilibrium phenomena and determination of plasma parameters in the hot core of the cathode region in free-burning arc discharges

International Nuclear Information System (INIS)

Kuehn, Gerrit; Kock, Manfred

2007-01-01

We present spectroscopic measurements of plasma parameters (electron density n e , electron temperature T e , gas temperature T g , underpopulation factor b) in the hot-core region in front of the cathode of a low-current, free-burning arc discharge in argon under atmospheric pressure. The discharge is operated in the hot-core mode, creating a hot cathode region with plasma parameters similar to high-current arcs in spite of the fact that we use comparatively low currents (less than 20 A). We use continuum emission and (optically thin) line emission to determine n e and T e . We apply relaxation measurements based on a power-interruption technique to investigate deviations from local thermodynamic equilibrium (LTE). These measurements let us determine the gas temperature T g . All measurements are performed side-on with charge-coupled-device cameras as detectors, so that all measured plasma parameters are spatially resolved after an Abel inversion. This yields the first ever spatially resolved observation of the non-LTE phenomena of the hot core in the near-cathode region of free-burning arcs. The results only partly coincide with previously published predictions and measurements in the literature

Relaxation behavior and dose dependence of radiation induced radicals in irradiated mango

International Nuclear Information System (INIS)

Kameya, Hiromi; Kakita, Daisuke; Kaimori, Yoshihiko; Ukai, Mitsuko; Kikuchi, Masahiro; Kobayashi, Yasuhiko; Shimoyama, Yuhei

2010-01-01

Mangoes are imported to Japan after treated with hot water. Recently, irradiated mangoes imported to U. S. are widely used. This paper reports on the ESR method for analyzing the radiation induced radicals of irradiated mangoes. Upon the γ ray irradiation, a strong single peak in the flesh and skin of mangoes was observed at g=2.004. This singlet peak may be attributed to organic free radicals. The ESR spectra of the flesh and skin of mangoes showed the radiation induced radicals due to cellulose by irradiation over 12 kGy. The relaxation times (T 1 and T 2 ) of the singlet signal were calculated. T 2 showed dose response according to increasing the irradiation dose levels, while T 1 was almost constant. The value of (T 1 T 2 ) 1/2 showed the dependence of irradiation dose level. (author)

[A study on Korean concepts of relaxation].

Science.gov (United States)

Park, J S

1992-01-01

Relaxation technique is an independent nursing intervention used in various stressful situations. The concept of relaxation must be explored for the meaning given by the people in their traditional thought and philosophy. Korean relaxation technique, wanting to become culturally acceptable and effective, is learning to recognize and develop Korean concepts, experiences, and musics of relaxation. This study was aimed at discovering Korean concepts, experiences and musics of relaxation and contributing the development of the relaxation technique for Korean people. The subjects were 59 nursing students, 39 hospitalized patients, 61 housewives, 21 rural residents and 16 researchers. Data were collected from September 4th to October 24th, 1991 by interviews or questionnaires. The data analysis was done by qualitative research method, and validity assured by conformation of the concept and category by 2 nursing scientists who had written a Master's thesis on the relaxation technique. The results of the study were summarized as follows; 1. The meaning of the relaxation concept; From 298 statements, 107 concepts were extracted and then 5 categories "Physical domain", "Psychological domain", "Complex domain", "Situation", and "environment" were organized. 'Don't have discomforts, 'don't have muscle tension', 'don't have energy (him in Korean)', 'don't have activities' subcategories were included in "Physical domain". 'Don't have anxiety', 'feel good', 'emotional stability', 'don't have wordly thoughts', 'feel one's brain muddled', 'loss of desire' subcategories were included in "physical domain" 'Comfort body and mind', 'don't have tension of body and mind', 'be sagged' 'liveliness of thoughts' subcategories were included in "Complex domain". 'Rest', 'sleep', 'others' subcategories were included in "Situation domain". And 'quite environment' & 'comfortable environment' subcategories were included in "Environmental domain". 2. The experiences of the relaxation; From 151

HOT 2010

DEFF Research Database (Denmark)

Lund, Henriette Romme

En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager en række læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet. Undersøgelsen er gentaget hvert år siden 2010.......En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager en række læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet. Undersøgelsen er gentaget hvert år siden 2010....

HOT 2013

DEFF Research Database (Denmark)

Lund, Henriette Romme

En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager en række læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet. Undersøgelsen er gentaget hvert år siden 2010.......En undersøgelse af, hvad der er hot - og burde være hot på læseområdet. I undersøgelsen deltager en række læsekyndige fra praksisfeltet, professionshøjskolerne og forskningsområdet. Undersøgelsen er gentaget hvert år siden 2010....

Do methicillin resistant staphylococcus (MRSA) carrier patients influence MRSA infection more than MRSA-carrier medical officers and MRSA-carrier family?

Science.gov (United States)

Dilogo, Ismail H; Arya, Abikara; Phedy; Loho, Tony

2013-07-01

to determine the rate of MRSA-carrier among patients, family members and health care providers, and the association between MRSA-carrier family members and health care providers on MRSA infection patient after orthopaedic surgery. this is a cross-sectional analytical study. Samples were taken consecutively during December 2010 to December 2011, consisting of postoperative patients infected with MRSA, attending family members, and the medical officers with history of contact with the patient. Swab culture were taken from nasal and axilla of all subjects. The incidence of MRSA infection, and MRSA-carrier on the patient, family members and medical officers were presented descriptively, while their association with MRSA infection was statistically tested using Fischer exact test. during the study period, there were 759 surgeries, with 4 (0.5%) patients were identified to have MRSA infection. Of these four cases, 48 subjects were enrolled. The rate of MRSA-carrier among patients, family and health care providers were 50%, 25% and 0% respectively. There were no significant association between MRSA and the rates of MRSA-carrier on the family member or health care providers. the incidence of MRSA infection, MRSA-carrier patient, MRSA-carrier health care providers, and family member carrier were 0.5%, 50%, 0%, and 25% respectively. No significant association found between MRSA-carrier on the family member or health care providers and MRSA infection patient. There were no MRSA infection found on the health care provider.

Suppression of sawtooth oscillations due to hot electrons and hot ions

International Nuclear Information System (INIS)

Zhang, Y.Z.; Berk, H.L.

1989-01-01

The theory of m = 1 kink mode stabilization is discussed in the presence of either magnetically trapped hot electrons or hot ions. For instability hot ion requires particles peaked inside the q = 1 surface, while hot electrons require that its pressure profile be increasing at the q = 1 surface. Experimentally observed sawtooth stabilization usually occurs with off-axis heating with ECRH and near axis heating with ICRH. Such heating may produce the magnetically trapped hot particle pressure profiles that are consistent with theory. 17 refs., 2 figs

The mechanism of persistent photoconductivity induced by minority carrier trapping effect in ultraviolet photo-detector made of polycrystalline diamond film

International Nuclear Information System (INIS)

Wang Lanxi; Chen Xuekang; Wu Gan; Guo Wantu; Cao Shengzhu; Shang Kaiwen; Han Weihua

2011-01-01

Performances of long persistent photoconductivity, high responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photo-detector fabricated on a microcrystalline diamond film. Charge-based deep level transient spectroscopy measurement confirmed that a shallow level with activation energy of 0.21 eV and capture cross section of 9.9 × 10 −20 cm 2 is presented in the band gap of the diamond film. The shallow level may not act as effective recombination center due to the so small activation energy according to Schockly-Read-Hall statistics. The persistent photoconductivity relaxation fits in with the so called “barrier-limited recombination” model, which may be a minority carrier trapping effect related recombination process. The photo-induced minority carriers (electrons in this paper) may be trapped by the shallow level during light irradiation process and then de-trap slowly via thermal excitation or tunneling effect after removing the light source, which contributes to the persistent photoconductivity. The trapping effect can also reduce the probability of carrier recombination, resulting in the high responsivity and the high gain.

Magnetic Resonance Fingerprinting with short relaxation intervals.

Science.gov (United States)

Amthor, Thomas; Doneva, Mariya; Koken, Peter; Sommer, Karsten; Meineke, Jakob; Börnert, Peter

2017-09-01

The aim of this study was to investigate a technique for improving the performance of Magnetic Resonance Fingerprinting (MRF) in repetitive sampling schemes, in particular for 3D MRF acquisition, by shortening relaxation intervals between MRF pulse train repetitions. A calculation method for MRF dictionaries adapted to short relaxation intervals and non-relaxed initial spin states is presented, based on the concept of stationary fingerprints. The method is applicable to many different k-space sampling schemes in 2D and 3D. For accuracy analysis, T 1 and T 2 values of a phantom are determined by single-slice Cartesian MRF for different relaxation intervals and are compared with quantitative reference measurements. The relevance of slice profile effects is also investigated in this case. To further illustrate the capabilities of the method, an application to in-vivo spiral 3D MRF measurements is demonstrated. The proposed computation method enables accurate parameter estimation even for the shortest relaxation intervals, as investigated for different sampling patterns in 2D and 3D. In 2D Cartesian measurements, we achieved a scan acceleration of more than a factor of two, while maintaining acceptable accuracy: The largest T 1 values of a sample set deviated from their reference values by 0.3% (longest relaxation interval) and 2.4% (shortest relaxation interval). The largest T 2 values showed systematic deviations of up to 10% for all relaxation intervals, which is discussed. The influence of slice profile effects for multislice acquisition is shown to become increasingly relevant for short relaxation intervals. In 3D spiral measurements, a scan time reduction of 36% was achieved, maintaining the quality of in-vivo T1 and T2 maps. Reducing the relaxation interval between MRF sequence repetitions using stationary fingerprint dictionaries is a feasible method to improve the scan efficiency of MRF sequences. The method enables fast implementations of 3D spatially

Use of relaxation skills in differentially skilled athletes.

OpenAIRE

Kudlackova, K.; Eccles, D. W.; Dieffenbach, K.

2013-01-01

Objectives: To examine the use of relaxation skills by differentially skilled athletes in relation to the deliberate practice framework. Design: Differentially skilled athletes completed a survey about their use of relaxation skills. Method: 150 athletes representing three skill levels (recreational, college, and professional) completed the deliberate relaxation for sport survey, which assessed relaxation on three deliberate practice dimensions (relevancy, concentration, and ...

Hyperfine relaxation of an optically pumped cesium vapor

International Nuclear Information System (INIS)

Tornos, J.; Amare, J.C.

1986-01-01

The relaxation of hyperfine orientation indirectly induced by optical pumping with a σ-polarized D 1 -light in a cesium vapor in the presence of Ar is experimentally studied. The detection technique ensures the absence of quadrupole relaxation contributions in the relaxation signals. The results from the dependences of the hyperfine relaxation rate on the temperature and argon pressure are: diffusion coefficient of Cs in Ar, D 0 = 0.101 +- 0.010 cm 2 s -1 at 0 0 C and 760 Torr; relaxation cross section by Cs-Ar collisions, σ/sub c/ = (104 +- 5) x 10 -23 cm 2 ; relaxation cross section by Cs-Cs (spin exchange) collisions, σ/sub e//sub x/ = (1.63 +- 0.13) x 10 -14 cm 2

Relaxation dynamics following transition of solvated electrons

International Nuclear Information System (INIS)

Barnett, R.B.; Landman, U.; Nitzan, A.

1989-01-01

Relaxation dynamics following an electronic transition of an excess solvated electron in clusters and in bulk water is studied using an adiabatic simulation method. In this method the solvent evolves classically and the electron is constrained to a specified state. The coupling between the solvent and the excess electron is evaluated via the quantum expectation value of the electron--water molecule interaction potential. The relaxation following excitation (or deexcitation) is characterized by two time scales: (i) a very fast (/similar to/20--30 fs) one associated with molecular rotations in the first solvation shell about the electron, and (ii) a slower stage (/similar to/200 fs), which is of the order of the longitudinal dielectric relaxation time. The fast relaxation stage exhibits an isotope effect. The spectroscopical consequences of the relaxation dynamics are discussed

14 CFR 399.82 - Passing off of carrier identity by affiliation between carriers.

Science.gov (United States)

2010-01-01

... forth in paragraph (c) of this section. In such cases the Board may determine in an adjudicatory... carrier shall not engage in joint public relations activities at points served by both carriers which tend... either carrier are performed in common with the other carrier or as part of a single system. In cases...

Relaxation and Distraction in Experimental Desensitization.

Science.gov (United States)

Weir, R. O.; Marshall, W. L.

1980-01-01

Compared experimental desensitization with a procedure that replaced relaxation with a distraction task and with an approach that combined both relaxation and distraction. Desensitization generally was more effective than the other two procedures. (Author)

Relaxation training after stroke: potential to reduce anxiety.

Science.gov (United States)

Kneebone, Ian; Walker-Samuel, Natalie; Swanston, Jennifer; Otto, Elisabeth

2014-01-01

To consider the feasibility of setting up a relaxation group to treat symptoms of post stroke anxiety in an in-patient post-acute setting; and to explore the effectiveness of relaxation training in reducing self-reported tension. A relaxation group protocol was developed in consultation with a multidisciplinary team and a user group. Over a period of 24 months, 55 stroke patients attended group autogenic relaxation training on a rehabilitation ward. Attendance ranged between one and eleven sessions. Self-reported tension was assessed pre and post relaxation training using the Tension Rating Circles (TRCs). The TRCs identified a significant reduction in self-reported tension from pre to post training, irrespective of the number of sessions attended; z = -3.656, p training. The TRCs proved acceptable to group members, but should be validated against standard anxiety measures. Further exploration of the application of relaxation techniques in clinical practice is desirable. Implications for Rehabilitation Anxiety is prevalent after stroke and likely affects rehabilitation outcomes. Relaxation training is a well proven treatment for anxiety in the non-stroke population. A significant within session reduction in tension, a hallmark symptom of anxiety, was evidenced via group relaxation training delivered in a post-acute, in-patient stroke unit setting. Relaxation training a shows promise as a treatment for anxiety after stroke.

Relaxation properties in classical diamagnetism

Science.gov (United States)

Carati, A.; Benfenati, F.; Galgani, L.

2011-06-01

It is an old result of Bohr that, according to classical statistical mechanics, at equilibrium a system of electrons in a static magnetic field presents no magnetization. Thus a magnetization can occur only in an out of equilibrium state, such as that produced through the Foucault currents when a magnetic field is switched on. It was suggested by Bohr that, after the establishment of such a nonequilibrium state, the system of electrons would quickly relax back to equilibrium. In the present paper, we study numerically the relaxation to equilibrium in a modified Bohr model, which is mathematically equivalent to a billiard with obstacles, immersed in a magnetic field that is adiabatically switched on. We show that it is not guaranteed that equilibrium is attained within the typical time scales of microscopic dynamics. Depending on the values of the parameters, one has a relaxation either to equilibrium or to a diamagnetic (presumably metastable) state. The analogy with the relaxation properties in the Fermi Pasta Ulam problem is also pointed out.

Thermionic refrigeration at CNT-CNT junctions

Science.gov (United States)

Li, C.; Pipe, K. P.

2016-10-01

Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

Relaxation Techniques to Manage IBS Symptoms

Science.gov (United States)

... for 15–20 seconds and then begin again. Progressive Muscle Relaxation This method of relaxation focuses on ... helpful, please consider supporting IFFGD with a small tax- deductible donation. Make Donation Adapted from IFFGD Publication # ...

Smooth transition between SMM and SCM-type slow relaxing dynamics for a 1-D assemblage of {Dy(nitronyl nitroxide)2} units.

Science.gov (United States)

Liu, Ruina; Li, Licun; Wang, Xiaoling; Yang, Peipei; Wang, Chao; Liao, Daizheng; Sutter, Jean-Pascal

2010-04-21

A model example for size effects on the dynamic susceptibility behavior is provided by the chain compound [{Dy(hfac)(3)NitPhIm(2)}Dy(hfac)(3)] (NitPhIm = 2-[4-(1-imidazole)phenyl]nitronyl nitroxide radical). The Arrhenius plot reveals two relaxation regimes attributed to SMM (Delta = 17.1 K and tau(0) = 17.5 x 10(-6) s) and SCM (Delta = 82.7 K and tau(0) = 8.8 x 10(-8) s) behaviors. The ferromagnetic exchange among the spin carriers has been established for the corresponding Gd derivative.

Vibrational and Rotational Energy Relaxation in Liquids

DEFF Research Database (Denmark)

Petersen, Jakob

Vibrational and rotational energy relaxation in liquids are studied by means of computer simulations. As a precursor for studying vibrational energy relaxation of a solute molecule subsequent to the formation of a chemical bond, the validity of the classical Bersohn-Zewail model for describing......, the vibrational energy relaxation of I2 subsequent to photodissociation and recombination in CCl4 is studied using classical Molecular Dynamics simulations. The vibrational relaxation times and the time-dependent I-I pair distribution function are compared to new experimental results, and a qualitative agreement...... is found in both cases. Furthermore, the rotational energy relaxation of H2O in liquid water is studied via simulations and a power-and-work analysis. The mechanism of the energy transfer from the rotationally excited H2O molecule to its water neighbors is elucidated, i.e. the energy-accepting degrees...

HOT STARS WITH HOT JUPITERS HAVE HIGH OBLIQUITIES

International Nuclear Information System (INIS)

Winn, Joshua N.; Albrecht, Simon; Fabrycky, Daniel; Johnson, John Asher

2010-01-01

We show that stars with transiting planets for which the stellar obliquity is large are preferentially hot (T eff > 6250 K). This could explain why small obliquities were observed in the earliest measurements, which focused on relatively cool stars drawn from Doppler surveys, as opposed to hotter stars that emerged more recently from transit surveys. The observed trend could be due to differences in planet formation and migration around stars of varying mass. Alternatively, we speculate that hot-Jupiter systems begin with a wide range of obliquities, but the photospheres of cool stars realign with the orbits due to tidal dissipation in their convective zones, while hot stars cannot realign because of their thinner convective zones. This in turn would suggest that hot Jupiters originate from few-body gravitational dynamics and that disk migration plays at most a supporting role.

Interstitial relaxations due to hydrostatic stress in niobium--oxygen alloys

International Nuclear Information System (INIS)

Tewari, S.N.

1974-01-01

Experimental investigations of the anelastic relaxation induced by hydrostatic stress in the range from ambient to 81 ksi were made for niobium--oxygen alloys. The anelastic responses, both for the pressurization and the pressure release experiments, were followed by measuring the relative length change between the oxygenated niobium sample and a pure niobium frame with a precision of about 2 A. The relaxation spectrum observed was shown to be made up of three distinct relaxations with unique relaxation times and strengths. The pressure dependence of the relaxation times gave the apparent activation volume for these relaxations of the order of 4 cm 3 /mole. The relaxations were observed to have relaxation strengths of the order of 10 -4 which were found to be independent of pressure up to 81 ksi. The relaxation times for these relaxations were found to occur in the same general temperature range as those for the Snoek relaxations of oxygen clusters in niobium. The temperature dependence of the relaxation times, however, gave activation energies of about 11 to 15 kcal/mole, as compared with roughly 27 to 29 kcal/mole for the Snoek relaxation of oxygen clusters in niobium. Several possible models for these relaxations were developed, however, none could predict the observed temperature dependence. The best interpretation of the data is that due to some anomalous competing relaxation the actual temperature dependence of these relaxations could not be observed. A completely self-consistent analysis is found which is based upon this assumption. (U.S.)

Relaxed Bell inequalities and Kochen-Specker theorems

Energy Technology Data Exchange (ETDEWEB)

Hall, Michael J. W. [Theoretical Physics, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia)

2011-08-15

The combination of various physically plausible properties, such as no signaling, determinism, and experimental free will, is known to be incompatible with quantum correlations. Hence, these properties must be individually or jointly relaxed in any model of such correlations. The necessary degrees of relaxation are quantified here via natural distance and information-theoretic measures. This allows quantitative comparisons between different models in terms of the resources, such as the number of bits of randomness, communication, and/or correlation, that they require. For example, measurement dependence is a relatively strong resource for modeling singlet-state correlations, with only 1/15 of one bit of correlation required between measurement settings and the underlying variable. It is shown how various ''relaxed'' Bell inequalities may be obtained, which precisely specify the complementary degrees of relaxation required to model any given violation of a standard Bell inequality. The robustness of a class of Kochen-Specker theorems, to relaxation of measurement independence, is also investigated. It is shown that a theorem of Mermin remains valid unless measurement independence is relaxed by 1/3. The Conway-Kochen ''free will'' theorem and a result of Hardy are less robust, failing if measurement independence is relaxed by only 6.5% and 4.5%, respectively. An appendix shows that existence of an outcome-independent model is equivalent to existence of a deterministic model.

Correlation between excited d-orbital electron lifetime in polaron dynamics and coloration of WO3 upon ultraviolet exposure

Science.gov (United States)

Lee, Young-Ahn; Han, Seung-Ik; Rhee, Hanju; Seo, Hyungtak

2018-05-01

Polarons have been suggested to explain the mechanism of the coloration of WO3 induced by UV light. However, despite the many experimental results that support small polarons as a key mechanism, direct observation of the carrier dynamics of polarons have yet to be reported. Here, we investigate the correlation between the electronic structure and the coloration of WO3 upon exposure to UV light in 5% H2/N2 gas and, more importantly, reveal photon-induced excited d-electron generation/relaxation via the W5+ oxidation state. The WO3 is fabricated by radio-frequency magnetron sputtering. X-ray diffraction patterns show that prepared WO3 is amorphous. Optical bandgap of 3.1 eV is measured by UV-vis before and after UV light. The results of Fourier transform infrared and Raman exhibit pristine WO3 is formed with surface H2O. The colored WO3 shows reduced state of W5+ state (34.3 eV) by using X-ray photoelectron spectroscopy. The valence band maximum of WO3 after UV light in H2 is shifted from mid gap to shallow donor by using ultraviolet photoelectron spectroscopy. During the exploration of the carrier dynamics, pump (700 nm)-probe (1000 nm) spectroscopy at the femtosecond scale was used. The results indicated that electron-phonon relaxation of UV-irradiated WO3, which is the origin of the polaron-induced local surface plasmonic effect, is dominant, resulting in slow decay (within a few picoseconds); in contrast, pristine WO3 shows fast decay (less than a picosecond). Accordingly, the long photoinduced carrier relaxation is ascribed to the prolonged hot-carrier lifetime in reduced oxides resulting in a greater number of free d-electrons and, therefore, more interactions with the W5+ sub-gap states.

F-center mechanism of long-term relaxation in lead zirconate-titanate-based piezoelectric ceramics. 1. After-heating relaxation

Directory of Open Access Journals (Sweden)

V. M. Ishchuk

2015-12-01

The oxygen vacancies-based model for description of the long-time relaxation processes is suggested. The model takes into account oxygen vacancies on the sample’s surface ends, their conversion into F+- and F0-centers under external effects (due to the liberation of the pyroelectric charge and subsequent relaxation of these centers into the simple oxygen vacancies after the actions termination. The initial sample’s state is electroneutrality one. F-center formation leads to the violation of the original sample’s electroneutrality, and generates DC electric field into the sample. Relaxation of F-centers is accompanied by decreasing of electric field, induced by them, and dielectric constant relaxation as consequent effect.

Both Hemophilia Health Care Providers and Hemophilia A Carriers Report that Carriers have Excessive Bleeding

Science.gov (United States)

Paroskie, Allison; Oso, Olatunde; DeBaun, Michael R.; Sidonio, Robert F

2014-01-01

Introduction Hemophilia A, the result of reduced factor VIII (FVIII) activity, is an X-linked recessive bleeding disorder. Previous reports of Hemophilia A carriers suggest an increased bleeding tendency. Our objective was to determine the attitudes and understanding of the Hemophilia A carrier bleeding phenotype, and opinions regarding timing of carrier testing from the perspective of both medical providers and affected patients. Data from this survey was used as preliminary data for an ongoing prospective study. Material and Methods An electronic survey was distributed to physicians and nurses employed at Hemophilia Treatment Centers (HTC), and Hemophilia A carriers who were members of Hemophilia Federation of America. Questions focused on the clinical understanding of bleeding symptoms and management of Hemophilia A carriers, and the timing and intensity of carrier testing. Results Our survey indicates that 51% (36/51) of providers compared to 78% (36/46) of carriers believe that Hemophilia A carriers with normal FVIII activity have an increased bleeding tendency (pHemophilia A carriers report a high frequency of bleeding symptoms. Regarding carrier testing, 72% (50/69) of medical providers recommend testing after 14 years of age, conversely 65% (29/45) of Hemophilia A carriers prefer testing to be done prior to this age (pHemophilia A carriers self-report a higher frequency of bleeding than previously acknowledged, and have a preference for earlier testing to confirm carrier status. PMID:24309601

Cross-relaxation in multiple pulse NQR spin-locking

Energy Technology Data Exchange (ETDEWEB)

Beltjukov, P. A.; Kibrik, G. E. [Perm State University, Physics Department (Russian Federation); Furman, G. B., E-mail: gregoryf@bgu.ac.il; Goren, S. D. [Ben Gurion University, Physics Department (Israel)

2008-01-15

The experimental and theoretical NQR multiple-pulse spin locking study of cross-relaxation process in solids containing nuclei of two different sorts I > 1/2 and S = 1/2 coupled by the dipole-dipole interactions and influenced by an external magnetic field. Two coupled equations for the inverse spin temperatures of the both spin systems describing the mutual spin lattice relaxation and the cross-relaxation were obtained using the method of the nonequilibrium state operator. It is shown that the relaxation process is realized with non-exponential time dependence describing by a sum of two exponents. The cross relaxation time is calculated as a function of the multiple-pulse field parameters which agree with the experimental data. The calculated magnetization cross relaxation time vs the strength of the applied magnetic field agrees well with the obtained experimental data.

Collisional relaxation of electron tail distribution

International Nuclear Information System (INIS)

Yamagiwa, Mitsuru; Okamoto, Masao.

1985-05-01

Relaxation due to the Coulomb collisions of the electron velocity distribution function with a high energy tail is investigated in detail. In the course of the relaxation, a 'saddle' point can be created in velocity space owing to upsilon -3 dependence of the deflection rate and a positive slope or a 'dip' appears in the tail direction. The time evolution of the electron tail is studied analytically. A comparison is made with numerical results by using a Fokker-Planck code. Also discussed is the kinetic instability concerned with the positive slope during the relaxation. (author)

Charge carrier dynamics of methylammonium lead iodide: from PbI₂-rich to low-dimensional broadly emitting perovskites.

Science.gov (United States)

Klein, Johannes R; Flender, Oliver; Scholz, Mirko; Oum, Kawon; Lenzer, Thomas

2016-04-28

We provide an investigation of the charge carrier dynamics of the (MAI)(x)(PbI2)(1-x) system in the range x = 0.32-0.90 following the recently published "pseudobinary phase-composition processing diagram" of Song et al. (Chem. Mater., 2015, 27, 4612). The dynamics were studied using ultrafast pump-supercontinuum probe spectroscopy over the pump fluence range 2-50 μJ cm(-2), allowing for a wide variation of the initial carrier density. At high MAI excess (x = 0.90), low-dimensional perovskites (LDPs) are formed, and their luminescence spectra are significantly blue-shifted by ca. 50 nm and broadened compared to the 3D perovskite. The shift is due to quantum confinement effects, and the inhomogeneous broadening arises from different low-dimensional structures (predominantly 2D, but presumably also 1D and 0D). Accurate transient carrier temperatures are extracted from the transient absorption spectra. The regimes of carrier-carrier, carrier-optical phonon and acoustic phonon scattering are clearly distinguished. Perovskites with mole fractions x ≤ 0.71 exhibit extremely fast carrier cooling (ca. 300 fs) at low fluence of 2 μJ cm(-2), however cooling slows down significantly at high fluence of 50 μJ cm(-2) due to the "hot phonon effect" (ca. 2.8 ps). A kinetic analysis of the electron-hole recombination dynamics provides second-order recombination rate constants k2 which decrease from 5.3 to 1.5 × 10(-9) cm(3) s(-1) in the range x = 0.32-0.71. In contrast, recombination in the LDPs (x = 0.90) is more than one order of magnitude faster, 6.4 × 10(-8) cm(3) s(-1), which is related to the confined perovskite structure. Recombination in these LDPs should be however still slow enough for their potential application as efficient broadband emitters or solar light-harvesting materials.

The effect of pigment matrix, temperature and amount of carrier on the yield and final color properties of spray dried purple corn (Zea mays L.) cob anthocyanin powders.

Science.gov (United States)

Lao, Fei; Giusti, M Monica

2017-07-15

Spray drying is an economic technique to produce anthocyanin-based colorants. High pigments yields with minimum color degradation are desirable to maximize quality and profits. This study evaluated the impacts of purple corncob (PCC) anthocyanin extraction matrices (hot water, 40% ethanol, C18 purified), drying inlet temperature (130, 150, 170°C) and amount of carrier (2%, 5%, 10% maltodextrin) on the yields and quality of PCC anthocyanin powders. Monomeric and polymeric anthocyanins, color properties (CIELch, haze), and pigments composition before and after spray drying were determined. The yield and final color quality of spray dried PCC anthocyanins were affected (p<0.05) by all parameters evaluated. The pigment matrix, inlet temperature, and carrier amount had biggest impacts on product water solubility, pigments degradation and yield, respectively. The optimal combination of hot water extracts spray dried with 5% maltodextrin at 150°C gave the highest pigment yield (∼90%) with good solubility with the least color loss. Copyright © 2017 Elsevier Ltd. All rights reserved.

Multi-region relaxed Hall magnetohydrodynamics with flow

Energy Technology Data Exchange (ETDEWEB)

Lingam, Manasvi, E-mail: mlingam@princeton.edu [Department of Astrophysical Sciences, Princeton University, Princeton, New Jersey 08544 (United States); Abdelhamid, Hamdi M., E-mail: hamdi@ppl.k.u-tokyo.ac.jp [Graduate School of Frontier Sciences, The University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8561 (Japan); Physics Department, Faculty of Science, Mansoura University, Mansoura 35516 (Egypt); Hudson, Stuart R., E-mail: shudson@pppl.gov [Princeton Plasma Physics Laboratory, PO Box 451, Princeton, New Jersey 08543 (United States)

2016-08-15

The recent formulations of multi-region relaxed magnetohydrodynamics (MRxMHD) have generalized the famous Woltjer-Taylor states by incorporating a collection of “ideal barriers” that prevent global relaxation and flow. In this paper, we generalize MRxMHD with flow to include Hall effects, and thereby obtain the partially relaxed counterparts of the famous double Beltrami states as a special subset. The physical and mathematical consequences arising from the introduction of the Hall term are also presented. We demonstrate that our results (in the ideal MHD limit) constitute an important subset of ideal MHD equilibria, and we compare our approach against other variational principles proposed for deriving the partially relaxed states.

Dielectric Relaxation of Water: Theory and Experiment

International Nuclear Information System (INIS)

Adhikari, Narayan Prasad; Paudyal, Harihar; Johri, Manoj

2010-06-01

We have studied the hydrogen bond dynamics and methods for evaluation of probability and relaxation time for hydrogen bond network. Further, dielectric relaxation time has been calculated by using a diagonalization procedure by obtaining eigen values (inverse of relaxation time) of a master equation framed on the basis of Fokker-Planck equations. Microwave cavity spectrometer has been described to make measurements of relaxation time. Slater's perturbation equations are given for the analysis of the data. A comparison of theoretical and experimental data shows that there is a need for improvements in the theoretical model and experimental techniques to provide exact information about structural properties of water. (author)

Production of non carrier added (n.c.a.) {sup 177}Lu for radiopharmaceutical applications

Energy Technology Data Exchange (ETDEWEB)

Barkhausen, Christoph

2011-09-06

The goal of this dissertation was the development of a process to produce non carrier added {sup 177}Lu at the FRM II. For this purpose, preparative chromatographic methods were evaluated and applied. The highest quality of the nuclide which could only be achieved through a complex chemical process, has been already been proven by clinical studies to be very advantageous. The process has been built up in a hot cell as a semi-automated process and is now being adapted to the requirements of the 'Arzneimittelgesetz' in order to establish n.c.a. {sup 177}Lu as a pharmaceutical product.

Changes in the state of heat-resistant steel induced by repeated hot deformation

Science.gov (United States)

Lyubimova, Lyudmila L.; Fisenko, Roman N.; Tashlykov, Alexander A.; Tabakaev, Roman B.

2018-01-01

This work deals with the problems of structural regeneration by thermal restoration treatment (TRT). These include the lack of a structural sign showing that TRT is possible, a consensus on TRT modes, the data on the necessary relaxation depth of residual stresses, or criteria of structural restoration. Performing a TRT without solving these problems may deteriorate the properties of steel or even accelerate its destruction. With this in view, the purpose of this work is to determine experimentally how the residual stress state changes under thermal and mechanical loads in order to specify the signs of the restoration of structure and structural stability. The object of this research is unused 12Cr1MoV steel that has been aged naturally for 13 years. Using X-ray dosimetry with X-ray spectral analysis, we study the distribution of internal residual stresses of the first kind during the repeated hot deformation. After repeated thermal deformation, the sample under study transforms from a viscoelastic Maxwell material into a Kelvin-Voigt material, which facilitates structural stabilization. A sign of this is the relaxation limit increase, prevention of continuous decay of an α-solid solution of iron and restoration of the lattice parameter.

Hot-wire substoichiometric tungsten oxide films deposited in hydrogen environment with n-type conductivity

International Nuclear Information System (INIS)

Kostis, I; Vasilopoulou, M; Giannakopoulos, K; Papadimitropoulos, G; Davazoglou, D; Michalas, L; Papaioannou, G; Konofaos, N; Iliadis, A A; Kennou, S

2012-01-01

Substoichiometric tungsten oxide nanostructured films were synthesized by a hot-wire deposition technique in hydrogen-rich environment and characterized for their structural and electrical properties. A semiconducting behaviour was identified, allowing n-type conductivity even at room temperature which is an important result since it is well known that fully stoichiometric tungsten trioxide is nearly an insulator. Current-voltage characteristics for various temperatures were measured for tungsten oxide/Si heterostructures and analysed using proper modelling. As a result, the conduction mechanism inside the films was identified and found to be of a dual nature, with variable range hopping being dominant at near room temperatures. The saturation current was found to be thermally activated and the activation energy was calculated at 0.40 eV and the grain boundaries barrier at 150 meV. From Hall measurements it was also revealed that the dominant carriers are electrons and a carrier concentration of about 10 14 cm -3 was estimated.

Instantaneous band gap collapse in VO{sub 2} caused by photocarrier doping

Energy Technology Data Exchange (ETDEWEB)

Herzog, Marc; Wegkamp, Daniel; Wolf, Martin; Staehler, Julia [Fritz-Haber-Institut der MPG, Berlin (Germany); Xian, Lede; Cudazzo, Pierluigi [Univ. del Pais Vasco, San Sebastian (Spain); European Theoretical Spectroscopy Facility (ETSF) (France); Gatti, Matteo [European Theoretical Spectroscopy Facility (ETSF) (France); Ecole Polytechnique, Palaiseau (France); McGahan, Christina L.; Marvel, Robert E.; Haglund, Richard F. [Vanderbilt Univ., Nashville, Tennessee (United States); Rubio, Angel [Fritz-Haber-Institut der MPG, Berlin (Germany); Univ. del Pais Vasco, San Sebastian (Spain); European Theoretical Spectroscopy Facility (ETSF) (France); MPI for the Structure and Dynamics of Matter, Hamburg (Germany)

2015-07-01

We have investigated the controversially discussed mechanism of the insulator-to-metal transition (IMT) in VO{sub 2} by means of femtosecond time-resolved photoelectron spectroscopy (trPES). Our data show that photoexcitation transforms insulating monoclinic VO{sub 2} quasi-instantaneously into a metal without an 80 fs structural bottleneck for the photoinduced electronic phase transition. First-principles many-body perturbation theory calculations reveal an ultrahigh sensitivity of the VO{sub 2} band gap to variations of the dynamically screened Coulomb interaction thus supporting the fully electronically driven isostructural IMT indicated by our trPES results. We conclude that the ultrafast band structure renormalization is caused by photoexcitation of carriers from localized V 3d valence states, strongly changing the screening before significant hot-carrier relaxation or ionic motion has occurred.

Plasmonic tunnel junctions for single-molecule redox chemistry.

Science.gov (United States)

de Nijs, Bart; Benz, Felix; Barrow, Steven J; Sigle, Daniel O; Chikkaraddy, Rohit; Palma, Aniello; Carnegie, Cloudy; Kamp, Marlous; Sundararaman, Ravishankar; Narang, Prineha; Scherman, Oren A; Baumberg, Jeremy J

2017-10-20

Nanoparticles attached just above a flat metallic surface can trap optical fields in the nanoscale gap. This enables local spectroscopy of a few molecules within each coupled plasmonic hotspot, with near thousand-fold enhancement of the incident fields. As a result of non-radiative relaxation pathways, the plasmons in such sub-nanometre cavities generate hot charge carriers, which can catalyse chemical reactions or induce redox processes in molecules located within the plasmonic hotspots. Here, surface-enhanced Raman spectroscopy allows us to track these hot-electron-induced chemical reduction processes in a series of different aromatic molecules. We demonstrate that by increasing the tunnelling barrier height and the dephasing strength, a transition from coherent to hopping electron transport occurs, enabling observation of redox processes in real time at the single-molecule level.

Universal relaxation times for electron and nucleon gases

OpenAIRE

Pelc, M.; Marciak-Kozlowska, J.; Kozlowski, M.

2007-01-01

In this paper we calculate the universal relaxation times for electron and nucleon fermionic gases. We argue that the universal relaxation time tau(i) is equal tau(i)=h/m square v(i) where v(i)=alpha(i)c and alpha(1)=0.15 for nucleon gas and alpha(2)=1/137 for electron gas, c=light velocity. With the universal relaxation time we formulate the thermal Proca equation for fermionic gases. Key words: universal relaxation time, thermal universal Proca equation.

Anomalous relaxation and self-organization in nonequilibrium processes

International Nuclear Information System (INIS)

Fatkullin, Ibrahim; Kladko, Konstantin; Mitkov, Igor; Bishop, A. R.

2001-01-01

We study thermal relaxation in ordered arrays of coupled nonlinear elements with external driving. We find that our model exhibits dynamic self-organization manifested in a universal stretched-exponential form of relaxation. We identify two types of self-organization, cooperative and anticooperative, which lead to fast and slow relaxation, respectively. We give a qualitative explanation for the behavior of the stretched exponent in different parameter ranges. We emphasize that this is a system exhibiting stretched-exponential relaxation without explicit disorder or frustration

Spin relaxation of iron in mixed state hemoproteins

International Nuclear Information System (INIS)

Wajnberg, E.; Kalinowski, H.J.; Bemski, G.; Helman, J.S.

1984-01-01

In pure states hemoproteins the relaxation of iron depends on its spin state. It is found that in both mixed state met-hemoglobin and met-myoglobin, the low and high spin states relax through an Orbach-like process. Also, very short (approx. 1 ns) and temperature independent transverse relaxation times T 2 were estimated. This peculiar behaviour of the relaxation may result from the unusual electronic structure of mixed state hemoproteins that allows thermal equilibrium and interconversion of the spin states. (Author) [pt

Superparamagnetic relaxation of weakly interacting particles

DEFF Research Database (Denmark)

Mørup, Steen; Tronc, Elisabeth

1994-01-01

The influence of particle interactions on the superparamagnetic relaxation time has been studied by Mossbauer spectroscopy in samples of maghemite (gamma-Fe2O3) particles with different particle sizes and particle separations. It is found that the relaxation time decreases with decreasing particl...

Nuclear magnetic relaxation induced by exchange-mediated orientational randomization: longitudinal relaxation dispersion for a dipole-coupled spin-1/2 pair.

Science.gov (United States)

Chang, Zhiwei; Halle, Bertil

2013-10-14

In complex biological or colloidal samples, magnetic relaxation dispersion (MRD) experiments using the field-cycling technique can characterize molecular motions on time scales ranging from nanoseconds to microseconds, provided that a rigorous theory of nuclear spin relaxation is available. In gels, cross-linked proteins, and biological tissues, where an immobilized macromolecular component coexists with a mobile solvent phase, nuclear spins residing in solvent (or cosolvent) species relax predominantly via exchange-mediated orientational randomization (EMOR) of anisotropic nuclear (electric quadrupole or magnetic dipole) couplings. The physical or chemical exchange processes that dominate the MRD typically occur on a time scale of microseconds or longer, where the conventional perturbation theory of spin relaxation breaks down. There is thus a need for a more general relaxation theory. Such a theory, based on the stochastic Liouville equation (SLE) for the EMOR mechanism, is available for a single quadrupolar spin I = 1. Here, we present the corresponding theory for a dipole-coupled spin-1/2 pair. To our knowledge, this is the first treatment of dipolar MRD outside the motional-narrowing regime. Based on an analytical solution of the spatial part of the SLE, we show how the integral longitudinal relaxation rate can be computed efficiently. Both like and unlike spins, with selective or non-selective excitation, are treated. For the experimentally important dilute regime, where only a small fraction of the spin pairs are immobilized, we obtain simple analytical expressions for the auto-relaxation and cross-relaxation rates which generalize the well-known Solomon equations. These generalized results will be useful in biophysical studies, e.g., of intermittent protein dynamics. In addition, they represent a first step towards a rigorous theory of water (1)H relaxation in biological tissues, which is a prerequisite for unravelling the molecular basis of soft

Stress Relaxation in Entangled Polymer Melts

DEFF Research Database (Denmark)

Hou, Ji-Xuan; Svaneborg, Carsten; Everaers, Ralf

2010-01-01

We present an extensive set of simulation results for the stress relaxation in equilibrium and step-strained bead-spring polymer melts. The data allow us to explore the chain dynamics and the shear relaxation modulus, G(t), into the plateau regime for chains with Z=40 entanglements...... and into the terminal relaxation regime for Z=10. Using the known (Rouse) mobility of unentangled chains and the melt entanglement length determined via the primitive path analysis of the microscopic topological state of our systems, we have performed parameter-free tests of several different tube models. We find...

Relaxation processes during amorphous metal alloys heating

International Nuclear Information System (INIS)

Malinochka, E.Ya.; Durachenko, A.M.; Borisov, V.T.

1982-01-01

Behaviour of Te+15 at.%Ge and Fe+13 at.%P+7 at.%C amorphous metal alloys during heating has been studied using the method of differential scanning calorimetry (DSC) as the most convenient one for determination of the value of heat effects, activation energies, temperature ranges of relaxation processes. Thermal effects corresponding to high-temperature relaxation processes taking place during amorphous metal alloys (AMA) heating are detected. The change of ratio of relaxation peaks values on DSC curves as a result of AMA heat treatment can be explained by the presence of a number of levels of inner energy in amorphous system, separated with potential barriers, the heights of which correspond to certain activation energies of relaxation processes

Improved memristor-based relaxation oscillator

KAUST Repository

Mosad, Ahmed G.

2013-09-01

This paper presents an improved memristor-based relaxation oscillator which offers higher frequency and wider tunning range than the existing reactance-less oscillators. It also has the capability of operating on two positive supplies or alternatively a positive and negative supply. Furthermore, it has the advantage that it can be fully integrated on-chip providing an area-efficient solution. On the other hand, The oscillation concept is discussed then a complete mathematical analysis of the proposed oscillator is introduced. Furthermore, the power consumption of the new relaxation circuit is discussed and validated by the PSPICE circuit simulations showing an excellent agreement. MATLAB results are also introduced to demonstrate the resistance range and the corresponding frequency range which can be obtained from the proposed relaxation oscillator. © 2013 Elsevier Ltd.

Can quantum coherent solar cells break detailed balance?

International Nuclear Information System (INIS)

Kirk, Alexander P.

2015-01-01

Carefully engineered coherent quantum states have been proposed as a design attribute that is hypothesized to enable solar photovoltaic cells to break the detailed balance (or radiative) limit of power conversion efficiency by possibly causing radiative recombination to be suppressed. However, in full compliance with the principles of statistical mechanics and the laws of thermodynamics, specially prepared coherent quantum states do not allow a solar photovoltaic cell—a quantum threshold energy conversion device—to exceed the detailed balance limit of power conversion efficiency. At the condition given by steady-state open circuit operation with zero nonradiative recombination, the photon absorption rate (or carrier photogeneration rate) must balance the photon emission rate (or carrier radiative recombination rate) thus ensuring that detailed balance prevails. Quantum state transitions, entropy-generating hot carrier relaxation, and photon absorption and emission rate balancing are employed holistically and self-consistently along with calculations of current density, voltage, and power conversion efficiency to explain why detailed balance may not be violated in solar photovoltaic cells

Parameterization of NMR relaxation curves in terms of logarithmic moments of the relaxation time distribution.

Science.gov (United States)

Petrov, Oleg V; Stapf, Siegfried

2017-06-01

This work addresses the problem of a compact and easily comparable representation of multi-exponential relaxation data. It is often convenient to describe such data in a few parameters, all being of physical significance and easy to interpret, and in such a way that enables a model-free comparison between different groups of samples. Logarithmic moments (LMs) of the relaxation time constitute a set of parameters which are related to the characteristic relaxation time on the log-scale, the width and the asymmetry of an underlying distribution of exponentials. On the other hand, the calculation of LMs does not require knowing the actual distribution function and is reduced to a numerical integration of original data. The performance of this method has been tested on both synthetic and experimental NMR relaxation data which differ in a signal-to-noise ratio, the sampling range and the sampling rate. The calculation of two lower-order LMs, the log-mean time and the log-variance, has proved robust against deficiencies of the experiment such as scattered data point and incomplete sampling. One may consider using them as such to monitor formation of a heterogeneous structure, e.g., in phase separation, vitrification, polymerization, hydration, aging, contrast agent propagation processes. It may also assist in interpreting frequency and temperature dependences of relaxation, revealing a crossover from slow to fast exchange between populations. The third LM was found to be a less reliable quantity due to its susceptibility to the noise and must be used with caution. Copyright © 2017 Elsevier Inc. All rights reserved.

Parameterization of NMR relaxation curves in terms of logarithmic moments of the relaxation time distribution

Science.gov (United States)

Petrov, Oleg V.; Stapf, Siegfried

2017-06-01

This work addresses the problem of a compact and easily comparable representation of multi-exponential relaxation data. It is often convenient to describe such data in a few parameters, all being of physical significance and easy to interpret, and in such a way that enables a model-free comparison between different groups of samples. Logarithmic moments (LMs) of the relaxation time constitute a set of parameters which are related to the characteristic relaxation time on the log-scale, the width and the asymmetry of an underlying distribution of exponentials. On the other hand, the calculation of LMs does not require knowing the actual distribution function and is reduced to a numerical integration of original data. The performance of this method has been tested on both synthetic and experimental NMR relaxation data which differ in a signal-to-noise ratio, the sampling range and the sampling rate. The calculation of two lower-order LMs, the log-mean time and the log-variance, has proved robust against deficiencies of the experiment such as scattered data point and incomplete sampling. One may consider using them as such to monitor formation of a heterogeneous structure, e.g., in phase separation, vitrification, polymerization, hydration, aging, contrast agent propagation processes. It may also assist in interpreting frequency and temperature dependences of relaxation, revealing a crossover from slow to fast exchange between populations. The third LM was found to be a less reliable quantity due to its susceptibility to the noise and must be used with caution.

Vibrational-rotational relaxation of the simplest hydrogen-containing molecules (review)

International Nuclear Information System (INIS)

Molevich, N.E.; Oraevskii, A.N.

1987-01-01

In connection with the development of chemical lasers much attention is now devoted to the study of kinetic processes is gaseous mixtures containing the hydrogen halides. Vibrational relaxation of molecules if primarily studied without specifying its relation to the rational levels. Rotational relaxation is regarded a priori as faster than vibrational relaxation, so that the population of the rotational levels is assumed to be in equilibrium. This approach to the relaxation of hydrogen halide molecules (and other diatomic hydrogen-containing molecules), however, is unable to explain satisfactorily the results of the papers discussed below. An analysis of the data obtained in these papers leads to the conclusion that the general picture of relaxation in diatomic hydrogen-containing molecules must be viewed as a unified process of vibrational and rotational relaxation. It is shown that those effects observed during vibrational relaxation of such molecules which are unusual from the standpoint of the theory of vibrational-translational relaxation are well explained in terms of intermolecular vibrational-rotational relaxation together with pure rotational relaxation

Simulation study of stepwise relaxation in a spheromak plasma

International Nuclear Information System (INIS)

Horiuchi, Ritoku; Uchida, Masaya; Sato, Tetsuya.

1991-10-01

The energy relaxation process of a spheromak plasma in a flux conserver is investigated by means of a three-dimensional magnetohydrodynamic simulation. The resistive decay of an initial force-free profile brings the spheromak plasma to an m = 1/n = 2 ideal kink unstable region. It is found that the energy relaxation takes place in two steps; namely, the relaxation consists of two physically distinguished phases, and there exists an intermediate phase in between, during which the relaxation becomes inactive temporarily. The first relaxation corresponds to the transition from an axially symmetric force-free state to a helically symmetric one with an n = 2 crescent magnetic island structure via the helical kink instability. The n = 2 helical structure is nonlinearly sustained in the intermediate phase. The helical twisting of the flux tube creates a reconnection current in the vicinity of the geometrical axis. The second relaxation is triggered by the rapid growth of the n = 1 mode when the reconnection current exceeds a critical value. The helical twisting relaxes through magnetic reconnection toward an axially symmetric force-free state. It is also found that the poloidal flux reduces during the helical twisting in the first relaxation and the generation of the toroidal flux occurs through the magnetic reconnection process in the second relaxation. (author)

Superparamagnetic relaxation in alpha-Fe particles

DEFF Research Database (Denmark)

Bødker, Franz; Mørup, Steen; Pedersen, Michael Stanley

1998-01-01

The superparamagnetic relaxation time of carbon-supported alpha-Fe particles with an average size of 3.0 Mm has been studied over a large temperature range by the use of Mossbauer spectroscopy combined with AC and DC magnetization measurements. It is found that the relaxation time varies...

The Efficacy of Relaxation Training in Treating Anxiety

Science.gov (United States)

Francesco, Pagnini; Mauro, Manzoni Gian; Gianluca, Castelnuovo; Enrico, Molinari

2009-01-01

This paper provides a review of scientific literature about relaxation training and its effects on anxiety. Research investigating progressive relaxation, meditation, applied relaxation and autogenic training were considered. All these methods proved to be effective in reducing anxiety in all kind of samples, affected or not by physical or…

Magnetic relaxation in analytical, coordination and bioinorganic chemistry

International Nuclear Information System (INIS)

Mikhajlov, O.

1982-01-01

Nuclear magnetic relaxation is a special type of nuclear magnetic resonance in which the rate is measured of energy transfer between the excited nuclei and their molecular medium (spin-lattice relaxation) or the whole nuclear spin system (spin-spin relaxation). Nuclear magnetic relaxation relates to nuclei with a spin of 1/2, primarily H 1 1 , and is mainly measured in water solutions. It is suitable for (1) analytical chemistry because the relaxation time rapidly reduces in the presence of paramagnetic ions, (2) the study of complex compounds, (3) the study of biochemical reactions in the presence of different metal ions. It is also suitable for testing the composition of a flowing liquid. Its disadvantage is that it requires complex and expensive equipment. (Ha)

Structural relaxation in annealed hyperquenched basaltic glasses

DEFF Research Database (Denmark)

Guo, Xiaoju; Mauro, John C.; Potuzak, M.

2012-01-01

The enthalpy relaxation behavior of hyperquenched (HQ) and annealed hyperquenched (AHQ) basaltic glass is investigated through calorimetric measurements. The results reveal a common onset temperature of the glass transition for all the HQ and AHQ glasses under study, indicating that the primary...... relaxation is activated at the same temperature regardless of the initial departure from equilibrium. The analysis of secondary relaxation at different annealing temperatures provides insights into the enthalpy recovery of HQ glasses....

Sealed substrate carrier for electroplating

Science.gov (United States)

Ganti, Kalyana Bhargava [Fremont, CA

2012-07-17

One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier includes a non-conductive carrier body on which the substrates are held, and conductive lines are embedded within the carrier body. A conductive bus bar is embedded into a top side of the carrier body and is conductively coupled to the conductive lines. A thermoplastic overmold covers a portion of the bus bar, and there is a plastic-to-plastic bond between the thermoplastic overmold and the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Relaxed states of tokamak plasmas

International Nuclear Information System (INIS)

Kucinski, M.Y.; Okano, V.

1993-01-01

The relaxed states of tokamak plasmas are studied. It is assumed that the plasma relaxes to a quasi-steady state which is characterized by a minimum entropy production rate, compatible with a number of prescribed conditions and pressure balance. A poloidal current arises naturally due to the anisotropic resistivity. The minimum entropy production theory is applied, assuming the pressure equilibrium as fundamental constraint on the final state. (L.C.J.A.)

Negative magnetic relaxation in superconductors

Directory of Open Access Journals (Sweden)

Krasnoperov E.P.

2013-01-01

Full Text Available It was observed that the trapped magnetic moment of HTS tablets or annuli increases in time (negative relaxation if they are not completely magnetized by a pulsed magnetic field. It is shown, in the framework of the Bean critical-state model, that the radial temperature gradient appearing in tablets or annuli during a pulsed field magnetization can explain the negative magnetic relaxation in the superconductor.

Relaxation effects in ferrous complexes

International Nuclear Information System (INIS)

Nicolini, C.; Mathieu, J.P.; Chappert, J.

1976-01-01

The slow relaxation mechanism of the Fe 2+ ion in the tri-fluorinated TF(acac) and hexafluorinated HF(acac) complexes of Fe(II) acetylacetonate was investigated. The 300K and 77K Moessbauer spectra for TF(acac) consist in a slightly asymmetric quadrupole doublet. On the contrary, at 4.2K the higher energy line is strongly widened; that is typical of a slowing down in the electron relaxation frequency [fr

Electron - polar acoustical phonon interactions in nitride based diluted magnetic semiconductor quantum well via hot electron magnetotransport

International Nuclear Information System (INIS)

Pandya, Ankur; Shinde, Satyam; Jha, Prafulla K.

2015-01-01

In this paper the hot electron transport properties like carrier energy and momentum scattering rates and electron energy loss rates are calculated via interactions of electrons with polar acoustical phonons for Mn doped BN quantum well in BN nanosheets via piezoelectric scattering and deformation potential mechanisms at low temperatures with high electric field. Electron energy loss rate increases with the electric field. It is observed that at low temperatures and for low electric field the phonon absorption is taking place whereas, for sufficient large electric field, phonon emission takes place. Under the piezoelectric (polar acoustical phonon) scattering mechanism, the carrier scattering rate decreases with the reduction of electric field at low temperatures wherein, the scattering rate variation with electric field is limited by a specific temperature beyond which there is no any impact of electric field on such scattering

29 CFR 1201.1 - Carrier.

Science.gov (United States)

2010-07-01

... 29 Labor 4 2010-07-01 2010-07-01 false Carrier. 1201.1 Section 1201.1 Labor Regulations Relating to Labor (Continued) NATIONAL MEDIATION BOARD DEFINITIONS § 1201.1 Carrier. The term carrier includes any express company, sleeping car company, carrier by railroad, subject to the Interstate Commerce Act...

Spin transport and relaxation in graphene

International Nuclear Information System (INIS)

Han Wei; McCreary, K.M.; Pi, K.; Wang, W.H.; Li Yan; Wen, H.; Chen, J.R.; Kawakami, R.K.

2012-01-01

We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for

Observation of a Slater-type metal-to-insulator transition in Sr$_2$IrO$_4$ from time-resolved photo-carrier dynamics

OpenAIRE

Hsieh, D.; Mahmood, F.; Torchinsky, D. H.; Cao, G.; Gedik, N.

2012-01-01

We perform a time-resolved optical study of Sr$_2$IrO$_4$ to understand the influence of magnetic ordering on the low energy electronic structure of a strongly spin-orbit coupled $J_{eff}$=1/2 Mott insulator. By studying the recovery dynamics of photo-carriers excited across the Mott gap, we find that upon cooling through the N\\'{e}el temperature $T_N$ the system evolves continuously from a metal-like phase with fast ($\\sim$50 fs) and excitation density independent relaxation dynamics to a ga...

Structural relaxation and thermal conductivity coefficient of liquids

International Nuclear Information System (INIS)

Abdurasulov, A.

1992-01-01

Present article is devoted to structural relaxation and thermal conductivity coefficient of liquids. The thermoelastic properties of liquids were studied taking into account the contribution of translational and structural relaxation. The results of determination of dynamic coefficient of thermal conductivity of liquids taking into account the contribution of translational and structural relaxation are presented.

Nuclear spin-lattice relaxation in nitroxide spin-label EPR

DEFF Research Database (Denmark)

Marsh, Derek

2016-01-01

that the definition of nitrogen nuclear relaxation rate Wn commonly used in the CW-EPR literature for 14N-nitroxyl spin labels is inconsistent with that currently adopted in time-resolved EPR measurements of saturation recovery. Redefinition of the normalised 14N spin-lattice relaxation rate, b = Wn/(2We), preserves...... of spin-lattice relaxation in this three-level system. Expressions for CW-saturation EPR with the revised definitions are summarised. Data on nitrogen nuclear spin-lattice relaxation times are compiled according to the three-level scheme for 14N-relaxation: T1 n = 1/Wn. Results are compared and contrasted...

Methods of accounting the hot water consumption modes at the solar installations design

Directory of Open Access Journals (Sweden)

Vyacheslav O. Dubkovsky

2015-06-01

Full Text Available Peculiarities of the high-powered solar systems for hot water heating are considered. The purpose of work consists in development of methods for accounting the 24-hourly hot water consumption mode, determining the solar systems dynamic descriptions. The basic solar system schemes are analyzed with their shortages from the user satisfaction view point due to sun energy. For the dynamic parameters improvement the use of operative expense tank is examined such receptacle bearing built-in worm-pipe, through which all heat carrier from solar collectors passes before entering the fast heat exchanger which heats a tank-accumulator. The scientific novelty refers to the proof that this tank principal parameter is a not the volume, but the built-in exchanger capacity, determined by the solar collectors field total thermal power. As an ecological constituent of operating costs it is suggested to take into account cost paid for the emission of combustion products. As this method practical application example considered is the solar collectors capacity optimization for a communal enterprise.

Differential Analysis of the Nasal Microbiome of Pig Carriers or Non-Carriers of Staphylococcus aureus

DEFF Research Database (Denmark)

Espinosa-Gongora, Carmen; Larsen, Niels; Schonning, Kristian

2016-01-01

pathogen in animal carriers. The aim of this study was to determine whether the nasal microbiome of pig S. aureus carriers differs from that of non-carriers. The V3-V5 region of the 16S rRNA gene was sequenced from nasal swabs of 44 S. aureus carriers and 56 non-carriers using the 454 GS FLX titanium...... microbiome of pigs that are not colonized with S. aureus harbours several species/taxa that are significantly less abundant in pig carriers, suggesting that the nasal microbiota may play a role in the individual predisposition to S. aureus nasal carriage in pigs. Further research is warranted to isolate...

Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation

Science.gov (United States)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-02-01

Ultraviolet photoconductivity relaxation in ZnO thin films deposited by rf magnetron sputtering are investigated. Effect of oxygen partial pressure in the reactive gas mixture and film thickness on the photoconductivity transients is studied. A different photodetector configuration comprising ZnO thin film with an ultrathin overlayer of metals like Cu, Al, Sn, Au, Cr, and Te was designed and tested. Photoresponse signal were found to be stronger (four to seven times) in these configurations than the pure ZnO thin films. Sn(30 nm)/ZnO sample exhibits highest responsivity of ˜8.57 kV/W whereas Te(20 nm)/ZnO structure presents highest sensitivity of ˜31.3×103 compared to unloaded ZnO thin film. Enhancement in the photoresponse of ZnO thin films is attributed to the change in surface conductivity due to induced charge carriers at the interface because of the difference in work function and oxygen affinity values of metal overlayer with the underlying semiconducting layer. Charge carrier transfer from the metal layer to ZnO creates a surplus of electrons at the interface; a fraction of which are captured by the defect centers (traps) at the surface whereas the remaining one represents free carriers in the conduction band and are responsible for the enhanced photoconductivity.

Determination of hot carrier energy distributions from inversion of ultrafast pump-probe reflectivity measurements.

Science.gov (United States)

Heilpern, Tal; Manjare, Manoj; Govorov, Alexander O; Wiederrecht, Gary P; Gray, Stephen K; Harutyunyan, Hayk

2018-05-10

Developing a fundamental understanding of ultrafast non-thermal processes in metallic nanosystems will lead to applications in photodetection, photochemistry and photonic circuitry. Typically, non-thermal and thermal carrier populations in plasmonic systems are inferred either by making assumptions about the functional form of the initial energy distribution or using indirect sensors like localized plasmon frequency shifts. Here we directly determine non-thermal and thermal distributions and dynamics in thin films by applying a double inversion procedure to optical pump-probe data that relates the reflectivity changes around Fermi energy to the changes in the dielectric function and in the single-electron energy band occupancies. When applied to normal incidence measurements our method uncovers the ultrafast excitation of a non-Fermi-Dirac distribution and its subsequent thermalization dynamics. Furthermore, when applied to the Kretschmann configuration, we show that the excitation of propagating plasmons leads to a broader energy distribution of electrons due to the enhanced Landau damping.

Personality traits in Huntington's disease: An exploratory study of gene expansion carriers and non-carriers.

Science.gov (United States)

Larsen, Ida Unmack; Mortensen, Erik Lykke; Vinther-Jensen, Tua; Nielsen, Jørgen Erik; Knudsen, Gitte Moos; Vogel, Asmus

2016-12-01

Huntington's disease (HD) is associated with risk for developing psychiatric symptoms. Vulnerability or resilience to psychiatric symptoms may be associated with personality traits. This exploratory study, aimed to investigate personality traits in a large cohort of HD carriers and at risk gene-expansion negative individuals (HD non-carriers), exploring whether carrying the HD gene or growing up in an HD family influences personality traits. Forty-seven HD carriers, Thirty-nine HD non-carriers, and 121 healthy controls answered the Danish version of the revised NEO personality inventory. Comparisons between HD carriers and HD non-carriers were mostly non-significant but the combined group of HD carriers and non-carriers showed significantly higher scores on the facets: "hostility," "assertiveness," and "activity" and on the trait "Conscientiousness" relative to controls, "Conscientiousness" have been associated with resilience to psychiatric symptoms. Twelve HD carriers and non-carriers were classified as depressed and showed significantly lower scores on "Extraversion" and "Conscientiousness" and significantly higher scores on "Neuroticism," which are associated with vulnerability to psychiatric symptoms. Our findings suggest that, there is no direct effect of the HD gene on personality traits, but that personality assessment may be relevant to use when identifying individuals from HD families who are vulnerable to develop psychiatric symptoms. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

Picosecond absorption relaxation measured with nanosecond laser photoacoustics.

Science.gov (United States)

Danielli, Amos; Favazza, Christopher P; Maslov, Konstantin; Wang, Lihong V

2010-10-18

Picosecond absorption relaxation-central to many disciplines-is typically measured by ultrafast (femtosecond or picosecond) pump-probe techniques, which however are restricted to optically thin and weakly scattering materials or require artificial sample preparation. Here, we developed a reflection-mode relaxation photoacoustic microscope based on a nanosecond laser and measured picosecond absorption relaxation times. The relaxation times of oxygenated and deoxygenated hemoglobin molecules, both possessing extremely low fluorescence quantum yields, were measured at 576 nm. The added advantages in dispersion susceptibility, laser-wavelength availability, reflection sensing, and expense foster the study of natural-including strongly scattering and nonfluorescent-materials.

Calorimetric and relaxation properties of xylitol-water mixtures

Science.gov (United States)

Elamin, Khalid; Sjöström, Johan; Jansson, Helén; Swenson, Jan

2012-03-01

We present the first broadband dielectric spectroscopy (BDS) and differential scanning calorimetry study of supercooled xylitol-water mixtures in the whole concentration range and in wide frequency (10-2-106 Hz) and temperature (120-365 K) ranges. The calorimetric glass transition, Tg, decreases from 247 K for pure xylitol to about 181 K at a water concentration of approximately 37 wt. %. At water concentrations in the range 29-35 wt. % a plentiful calorimetric behaviour is observed. In addition to the glass transition, almost simultaneous crystallization and melting events occurring around 230-240 K. At higher water concentrations ice is formed during cooling and the glass transition temperature increases to a steady value of about 200 K for all higher water concentrations. This Tg corresponds to an unfrozen xylitol-water solution containing 20 wt. % water. In addition to the true glass transition we also observed a glass transition-like feature at 220 K for all the ice containing samples. However, this feature is more likely due to ice dissolution [A. Inaba and O. Andersson, Thermochim. Acta, 461, 44 (2007)]. In the case of the BDS measurements the presence of water clearly has an effect on both the cooperative α-relaxation and the secondary β-relaxation. The α-relaxation shows a non-Arrhenius temperature dependence and becomes faster with increasing concentration of water. The fragility of the solutions, determined by the temperature dependence of the α-relaxation close to the dynamic glass transition, decreases with increasing water content up to about 26 wt. % water, where ice starts to form. This decrease in fragility with increasing water content is most likely caused by the increasing density of hydrogen bonds, forming a network-like structure in the deeply supercooled regime. The intensity of the secondary β-relaxation of xylitol decreases noticeably already at a water content of 2 wt. %, and at a water content above 5 wt. % it has been replaced by a

Stress relaxation and hillock growth in thin films

International Nuclear Information System (INIS)

Jackson, M.S.; Li, C.Y.

1978-01-01

The relaxation of thermal stress in a thin film adhering to a substrate of differing expansion coefficient is discussed. Good agreement is found between literature data on relaxation during isothermal anneals of Pb films at up to 350 0 K and model calculations based on a state variable description of plastic flow. The stress system during relaxation is explored, and the absence of diffusional creep is explained. The plasticity-dominated relaxation process suggested by this analysis is shown to be in good qualitative agreement with data on rapid relaxation over the course of a cycle between room and cryogenic temperatures. The implications of this for long-range material transport in the film are discussed. It is shown that hillock volume should increase over the course of a temperature cycle. Finally, a mechanism for hillock nucleation based on grain boundary sliding is suggested

Peptide-Carrier Conjugation

DEFF Research Database (Denmark)

Hansen, Paul Robert

2015-01-01

To produce antibodies against synthetic peptides it is necessary to couple them to a protein carrier. This chapter provides a nonspecialist overview of peptide-carrier conjugation. Furthermore, a protocol for coupling cysteine-containing peptides to bovine serum albumin is outlined....

Relaxing music counters heightened consolidation of emotional memory.

Science.gov (United States)

Rickard, Nikki S; Wong, Wendy Wing; Velik, Lauren

2012-02-01

Emotional events tend to be retained more strongly than other everyday occurrences, a phenomenon partially regulated by the neuromodulatory effects of arousal. Two experiments demonstrated the use of relaxing music as a means of reducing arousal levels, thereby challenging heightened long-term recall of an emotional story. In Experiment 1, participants (N=84) viewed a slideshow, during which they listened to either an emotional or neutral narration, and were exposed to relaxing or no music. Retention was tested 1 week later via a forced choice recognition test. Retention for both the emotional content (Phase 2 of the story) and material presented immediately after the emotional content (Phase 3) was enhanced, when compared with retention for the neutral story. Relaxing music prevented the enhancement for material presented after the emotional content (Phase 3). Experiment 2 (N=159) provided further support to the neuromodulatory effect of music by post-event presentation of both relaxing music and non-relaxing auditory stimuli (arousing music/background sound). Free recall of the story was assessed immediately afterwards and 1 week later. Relaxing music significantly reduced recall of the emotional story (Phase 2). The findings provide further insight into the capacity of relaxing music to attenuate the strength of emotional memory, offering support for the therapeutic use of music for such purposes. Copyright © 2011 Elsevier Inc. All rights reserved.

Relaxation as a Factor in Semantic Desensitization

Science.gov (United States)

Bechtel, James E.; McNamara, J. Regis

1975-01-01

Relaxation and semantic desensitization were used to alleviate the fear of phobic females. Results showed that semantic desensitization, alone or in combination with relaxation, failed to modify the evaluative meanings evoked by the feared object. (SE)

Nuclear spin-lattice relaxation in nitroxide spin-label EPR.

Science.gov (United States)

Marsh, Derek

2016-11-01

Nuclear relaxation is a sensitive monitor of rotational dynamics in spin-label EPR. It also contributes competing saturation transfer pathways in T 1 -exchange spectroscopy, and the determination of paramagnetic relaxation enhancement in site-directed spin labelling. A survey shows that the definition of nitrogen nuclear relaxation rate W n commonly used in the CW-EPR literature for 14 N-nitroxyl spin labels is inconsistent with that currently adopted in time-resolved EPR measurements of saturation recovery. Redefinition of the normalised 14 N spin-lattice relaxation rate, b=W n /(2W e ), preserves the expressions used for CW-EPR, whilst rendering them consistent with expressions for saturation recovery rates in pulsed EPR. Furthermore, values routinely quoted for nuclear relaxation times that are deduced from EPR spectral diffusion rates in 14 N-nitroxyl spin labels do not accord with conventional analysis of spin-lattice relaxation in this three-level system. Expressions for CW-saturation EPR with the revised definitions are summarised. Data on nitrogen nuclear spin-lattice relaxation times are compiled according to the three-level scheme for 14 N-relaxation: T 1 n =1/W n . Results are compared and contrasted with those for the two-level 15 N-nitroxide system. Copyright © 2016 Elsevier Inc. All rights reserved.

Nuclear magnetic resonance relaxation in multiple sclerosis

DEFF Research Database (Denmark)

Larsson, H B; Barker, G J; MacKay, A

1998-01-01

OBJECTIVES: The theory of relaxation processes and their measurements are described. An overview is presented of the literature on relaxation time measurements in the normal and the developing brain, in experimental diseases in animals, and in patients with multiple sclerosis. RESULTS...... AND CONCLUSION: Relaxation time measurements provide insight into development of multiple sclerosis plaques, especially the occurrence of oedema, demyelination, and gliosis. There is also evidence that normal appearing white matter in patients with multiple sclerosis is affected. What is now needed are fast...

Repeatability and reliability of muscle relaxation properties induced by motor cortical stimulation.

Science.gov (United States)

Molenaar, Joery P; Voermans, Nicol C; de Jong, Lysanne A; Stegeman, Dick F; Doorduin, Jonne; van Engelen, Baziel G

2018-03-15

Impaired muscle relaxation is a feature of many neuromuscular disorders. However, there are few tests available to quantify muscle relaxation. Transcranial magnetic stimulation (TMS) of the motor cortex can induce muscle relaxation by abruptly inhibiting corticospinal drive. The aim of our study is to investigate if repeatability and reliability of TMS-induced relaxation is greater than voluntary relaxation. Furthermore, effects of sex, cooling and fatigue on muscle relaxation properties were studied. Muscle relaxation of deep finger flexors was assessed in twenty-five healthy subjects (14 M and 11 F, aged 39.1{plus minus}12.7 and 45.3{plus minus}8.7 years old, respectively) using handgrip dynamometry. All outcome measures showed greater repeatability and reliability in TMS-induced relaxation compared to voluntary relaxation. The within-subject coefficient of variability of normalized peak relaxation rate was lower in TMS-induced relaxation than in voluntary relaxation (3.0 vs 19.7% in men, and 6.1 vs 14.3% in women). The repeatability coefficient was lower (1.3 vs 6.1 s -1 in men and 2.3 vs 3.1 s -1 in women), and the intraclass correlation coefficient was higher (0.95 vs 0.53 in men and 0.78 vs 0.69 in women), for TMS-induced relaxation compared to voluntary relaxation. TMS enabled to demonstrate slowing effects of sex, muscle cooling, and muscle fatigue on relaxation properties that voluntary relaxation could not. In conclusion, repeatability and reliability of TMS-induced muscle relaxation was greater compared to voluntary muscle relaxation. TMS-induced muscle relaxation has the potential to be used in clinical practice for diagnostic purposes and therapy effect monitoring in patients with impaired muscle relaxation.

7 CFR 35.4 - Carrier.

Science.gov (United States)

2010-01-01

... AND PLUMS Definitions § 35.4 Carrier. Carrier means any common or private carrier, including, but not being limited to, trucks, rail, airplanes, vessels, tramp or chartered steamers, whether carrying for...

The use of (double) relaxation oscillation SQUIDs as a sensor

NARCIS (Netherlands)

van Duuren, M.J.; Brons, G.C.S.; Kattouw, H.; Flokstra, Jakob; Rogalla, Horst

1997-01-01

Relaxation Oscillation SQUIDs (ROSs) and Double Relaxation Oscillation SQUIDs (DROSs) are based on relaxation oscillations that are induced in hysteretic dc SQUIDs by an external L-R shunt. The relaxation frequency of a ROS varies with the applied flux Φ, whereas the output of a DROS is a dc

Relaxation strain measurements in cellular dislocation structures

International Nuclear Information System (INIS)

Tsai, C.Y.; Quesnel, D.J.

1984-01-01

The conventional picture of what happens during a stress relaxation usually involves imagining the response of a single dislocation to a steadily decreasing stress. The velocity of this dislocation decreases with decreasing stress in such a way that we can measure the stress dependence of the dislocation velocity. Analysis of the data from a different viewpoint enables us to calculate the apparent activation volume for the motion of the dislocation under the assumption of thermally activated glie. Conventional thinking about stress relaxation, however, does not consider the eventual fate of this dislocation. If the stress relaxes to a low enough level, it is clear that the dislocation must stop. This is consistent with the idea that we can determine the stress dependence of the dislocation velocity from relaxation data only for those cases where the dislocation's velocity is allowed to approach zero asymptotically, in short, for those cases where the dislocation never stops. This conflict poses a dilemma for the experimentalist. In real crystals, however, obstacles impede the dislocation's progress so that those dislocations which are stopped at a given stress will probably never resume motion under the influence of the steadily declining stress present during relaxation. Thus one could envision stress relaxation as a process of exhaustion of mobile dislocations, rather than a process of decreasing dislocation velocity. Clearly both points of view have merit and in reality both mechanisms contribute to the phenomena

Trend of the gas market and relaxation of regulation in major countries. Activities in Europe and America and problems of the gas industry in Japan; Shuyokoku no gas shijo to kisei kanwa no doko. Obei no ugoki to Nippon gas jigyo no kadai

Energy Technology Data Exchange (ETDEWEB)

Saita, A; Okaya, Y [Institute of Energy Economics, Tokyo (Japan)

1994-11-24

Recently, relaxation of regulation has been promoted in the gas markets of Europe and America. In Japan as well, an amendment to gas industry law including relaxation of regulation has been conducted, and it is to be effectuated from March 1995. In this report, position of gas in the energy market, consolidation status of infrastructure, market structure, and trend of regulation relaxation and competition promotion plan are compared in major countries. The future direction of the gas industry in Japan is discussed. Although there is vertical integration composed of producer, carrier and distributor in the traditional gas industry organization of major countries, Japan`s gas industry organization composes only of distributors. For the regulation relaxation in the U.K. and U.S.A., a third party access (TPA) system has been introduced, in which transportation net is opened to the third party. In Germany and France as well, regulation relaxation and liberation are discussed. For the regulation relaxation of gas market in Japan, it is pointed out that the poor consolidation of infrastructure, such as transportation net should be taken into account. 48 figs., 6 tabs.

Vibrational Energy Relaxation in Water-Acetonitrile Mixtures

NARCIS (Netherlands)

Cringus, Dan; Yeremenko, Sergey; Pshenichnikov, Maxim S.; Wiersma, Douwe A.; Kobayashi, Takayoshi; Kobayashi, Tetsuro; Nelson, Keith A.; Okada, Tadashi; Silvestri, Sandro De

2004-01-01

IR pump-probe spectroscopy is used to study the effect of hydrogen bonding on the vibrational energy relaxation pathways. Hydrogen bonding accelerates the population relaxation from 12ps in diluted acetonitrile solution to 700fs in bulk water.

Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells

Energy Technology Data Exchange (ETDEWEB)

Rumyantsev, V. V., E-mail: rumyantsev@ipm.sci-nnov.ru; Fadeev, M. A.; Morozov, S. V.; Dubinov, A. A.; Kudryavtsev, K. E.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Tuzov, I. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Dvoretskii, S. A.; Mikhailov, N. N. [Russian Academy of Sciences, Institute for Semiconductor Physics, Siberian Branch (Russian Federation); Gavrilenko, V. I. [Novosibirsk State University (Russian Federation); Teppe, F. [Universite Montpellier II, Laboratoire Charles Coulomb (L2C) (France)

2016-12-15

The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in n-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm{sup 2}) at 20 K. In the p-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.

F19 relaxation in non-magnetic hexafluorides

International Nuclear Information System (INIS)

Rigny, P.

1969-01-01

The interesting properties of the fluorine magnetic resonance in the hexafluorides of molybdenum, tungsten and uranium, are very much due to large anisotropies of the chemical shift tensors. In the solid phases these anisotropies, the values of which are deduced from line shape studies, allow one to show that the molecules undergo hindered rotations about the metal atom. The temperature and frequency dependence of the fluorine longitudinal relaxation times shows that the relaxation is due to the molecular motion. The dynamical parameters of this motion are then deduced from the complete study of the fluorine relaxation in the rotating frame. In the liquid phases, the existence of anisotropies allows an estimation of the different contributions to the relaxation. In particular, the frequency and temperature dependence of the relaxation shows it to be dominated by the spin-rotation interaction. We have shown that the strength of this interaction can be deduced from the chemical shifts, and the angle through which the molecule rotates quasi-freely can be determined. In the hexafluorides, this angle is roughly one radian at 70 C, and with the help of this value, the friction coefficients which describe the intermolecular interactions are discussed. (author) [fr

Electron spin relaxation in cryptochrome-based magnetoreception

DEFF Research Database (Denmark)

Kattnig, Daniel R; Solov'yov, Ilia A; Hore, P J

2016-01-01

The magnetic compass sense of migratory birds is thought to rely on magnetically sensitive radical pairs formed photochemically in cryptochrome proteins in the retina. An important requirement of this hypothesis is that electron spin relaxation is slow enough for the Earth's magnetic field to have...... this question for a structurally characterized model cryptochrome expected to share many properties with the putative avian receptor protein. To this end we combine all-atom molecular dynamics simulations, Bloch-Redfield relaxation theory and spin dynamics calculations to assess the effects of spin relaxation...... on the performance of the protein as a compass sensor. Both flavin-tryptophan and flavin-Z˙ radical pairs are studied (Z˙ is a radical with no hyperfine interactions). Relaxation is considered to arise from modulation of hyperfine interactions by librational motions of the radicals and fluctuations in certain...

Ultrafast carrier dynamics in a p-type GaN wafer under different carrier distributions

Science.gov (United States)

Fang, Yu; Yang, Junyi; Yang, Yong; Wu, Xingzhi; Xiao, Zhengguo; Zhou, Feng; Song, Yinglin

2016-02-01

The dependence of the carrier distribution on photoexcited carrier dynamics in a p-type Mg-doped GaN (GaN:Mg) wafer were systematically measured by femtosecond transient absorption (TA) spectroscopy. The homogeneity of the carrier distribution was modified by tuning the wavelength of the UV pulse excitation around the band gap of GaN:Mg. The TA kinetics appeared to be biexponential for all carrier distributions, and only the slower component decayed faster as the inhomogeneity of the carrier distribution increased. It was concluded that the faster component (50-70 ps) corresponded to the trap process of holes by the Mg acceptors, and the slower component (150-600 ps) corresponded to the combination of non-radiative surface recombination and intrinsic carrier recombination via dislocations. Moreover, the slower component increased gradually with the incident fluence due to the saturation of surface states.

Relaxation-phenomena in LiAl/FeS-cells

Science.gov (United States)

Borger, W.; Kappus, W.; Panesar, H. S.

A theoretical model of the capacity of strongly relaxing electrochemical systems is applied to the LiAl/FeS system. Relaxation phenomena in LiAl and FeS electrodes can be described by this model. Experimental relaxation data indicate that lithium transport through the alpha-LiAl layer to the particle surface is the capacity limiting process at high discharge current density in the LiAl electrode in LiCl-KCl and LiF-LiCl-LiBr mixtures. Strong relaxation is observed in the FeS electrode with LiCl-KCl electrolyte caused by lithium concentration gradients and precipitation of KCl in the pores.

Hot Dry Rock; Geothermal Energy

Energy Technology Data Exchange (ETDEWEB)

None

1990-01-01

The commercial utilization of geothermal energy forms the basis of the largest renewable energy industry in the world. More than 5000 Mw of electrical power are currently in production from approximately 210 plants and 10 000 Mw thermal are used in direct use processes. The majority of these systems are located in the well defined geothermal generally associated with crustal plate boundaries or hot spots. The essential requirements of high subsurface temperature with huge volumes of exploitable fluids, coupled to environmental and market factors, limit the choice of suitable sites significantly. The Hot Dry Rock (HDR) concept at any depth originally offered a dream of unlimited expansion for the geothermal industry by relaxing the location constraints by drilling deep enough to reach adequate temperatures. Now, after 20 years intensive work by international teams and expenditures of more than $250 million, it is vital to review the position of HDR in relation to the established geothermal industry. The HDR resource is merely a body of rock at elevated temperatures with insufficient fluids in place to enable the heat to be extracted without the need for injection wells. All of the major field experiments in HDR have shown that the natural fracture systems form the heat transfer surfaces and that it is these fractures that must be for geothermal systems producing from naturally fractured formations provide a basis for directing the forthcoming but, equally, they require accepting significant location constraints on HDR for the time being. This paper presents a model HDR system designed for commercial operations in the UK and uses production data from hydrothermal systems in Japan and the USA to demonstrate the reservoir performance requirements for viable operations. It is shown that these characteristics are not likely to be achieved in host rocks without stimulation processes. However, the long term goal of artificial geothermal systems developed by systematic

Relaxation of polarized nuclei in superconducting rhodium

DEFF Research Database (Denmark)

Knuuttila, T.A.; Tuoriniemi, J.T.; Lefmann, K.

2000-01-01

Nuclear spin lattice relaxation rates were measured in normal and superconducting (sc) rhodium with nuclear polarizations up to p = 0.55. This was sufficient to influence the sc state of Rh, whose T, and B-c, are exceptionally low. Because B-c ... is unchanged, the nuclear spin entropy was fully sustained across the sc transition. The relaxation in the sc state was slower at all temperatures without the coherence enhancement close to T-c. Nonzero nuclear polarization strongly reduced the difference between the relaxation rates in the sc and normal...

Spin relaxation in nanowires by hyperfine coupling

International Nuclear Information System (INIS)

Echeverria-Arrondo, C.; Sherman, E.Ya.

2012-01-01

Hyperfine interactions establish limits on spin dynamics and relaxation rates in ensembles of semiconductor quantum dots. It is the confinement of electrons which determines nonzero hyperfine coupling and leads to the spin relaxation. As a result, in nanowires one would expect the vanishing of this effect due to extended electron states. However, even for relatively clean wires, disorder plays a crucial role and makes electron localization sufficient to cause spin relaxation on the time scale of the order of 10 ns. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Escape time, relaxation, and sticky states of a softened Henon-Heiles model: Low-frequency vibrational mode effects and glass relaxation

Science.gov (United States)

Toledo-Marín, J. Quetzalcóatl; Naumis, Gerardo G.

2018-04-01

Here we study the relaxation of a chain consisting of three masses joined by nonlinear springs and periodic conditions when the stiffness is weakened. This system, when expressed in their normal coordinates, yields a softened Henon-Heiles system. By reducing the stiffness of one low-frequency vibrational mode, a faster relaxation is enabled. This is due to a reduction of the energy barrier heights along the softened normal mode as well as for a widening of the opening channels of the energy landscape in configurational space. The relaxation is for the most part exponential, and can be explained by a simple flux equation. Yet, for some initial conditions the relaxation follows as a power law, and in many cases there is a regime change from exponential to power-law decay. We pinpoint the initial conditions for the power-law decay, finding two regions of sticky states. For such states, quasiperiodic orbits are found since almost for all components of the initial momentum orientation, the system is trapped inside two pockets of configurational space. The softened Henon-Heiles model presented here is intended as the simplest model in order to understand the interplay of rigidity, nonlinear interactions and relaxation for nonequilibrium systems such as glass-forming melts or soft matter. Our softened system can be applied to model β relaxation in glasses and suggest that local reorientational jumps can have an exponential and a nonexponential contribution for relaxation, the latter due to asymmetric molecules sticking in cages for certain orientations.

Picosecond absorption relaxation measured with nanosecond laser photoacoustics

OpenAIRE

Danielli, Amos; Favazza, Christopher P.; Maslov, Konstantin; Wang, Lihong V.

2010-01-01

Picosecond absorption relaxation—central to many disciplines—is typically measured by ultrafast (femtosecond or picosecond) pump-probe techniques, which however are restricted to optically thin and weakly scattering materials or require artificial sample preparation. Here, we developed a reflection-mode relaxation photoacoustic microscope based on a nanosecond laser and measured picosecond absorption relaxation times. The relaxation times of oxygenated and deoxygenated hemoglobin molecules, b...

Milrinone relaxes pulmonary veins in guinea pigs and humans.

Directory of Open Access Journals (Sweden)

Annette D Rieg

Full Text Available INTRODUCTION: The phosphodiesterase-III inhibitor milrinone improves ventricular contractility, relaxes pulmonary arteries and reduces right ventricular afterload. Thus, it is used to treat heart failure and pulmonary hypertension (PH. However, its action on pulmonary veins (PVs is not defined, although particularly PH due to left heart disease primarily affects the pulmonary venous bed. We examined milrinone-induced relaxation in PVs from guinea pigs (GPs and humans. MATERIAL AND METHODS: Precision-cut lung slices (PCLS were prepared from GPs or from patients undergoing lobectomy. Milrinone-induced relaxation was studied by videomicroscopy in naïve PVs and in PVs pre-constricted with the ETA-receptor agonist BP0104. Baseline luminal area was defined as 100%. Intracellular cAMP was measured by ELISA and milrinone-induced changes of segmental vascular resistances were studied in the GP isolated perfused lung (IPL. RESULTS: In the IPL (GP, milrinone (10 µM lowered the postcapillary resistance of pre-constricted vessels. In PCLS (GP, milrinone relaxed naïve and pre-constricted PVs (120% and this relaxation was attenuated by inhibition of protein kinase G (KT 5823, adenyl cyclase (SQ 22536 and protein kinase A (KT 5720, but not by inhibition of NO-synthesis (L-NAME. In addition, milrinone-induced relaxation was dependent on the activation of K ATP-, BK Ca (2+- and Kv-channels. Human PVs also relaxed to milrinone (121%, however only if pre-constricted. DISCUSSION: Milrinone relaxes PVs from GPs and humans. In GPs, milrinone-induced relaxation is based on K ATP-, BK Ca (2+- and Kv-channel-activation and on cAMP/PKA/PKG. The relaxant properties of milrinone on PVs lead to reduced postcapillary resistance and hydrostatic pressures. Hence they alleviate pulmonary edema and suggest beneficial effects of milrinone in PH due to left heart disease.

Milrinone relaxes pulmonary veins in guinea pigs and humans.

Science.gov (United States)

Rieg, Annette D; Suleiman, Said; Perez-Bouza, Alberto; Braunschweig, Till; Spillner, Jan W; Schröder, Thomas; Verjans, Eva; Schälte, Gereon; Rossaint, Rolf; Uhlig, Stefan; Martin, Christian

2014-01-01

The phosphodiesterase-III inhibitor milrinone improves ventricular contractility, relaxes pulmonary arteries and reduces right ventricular afterload. Thus, it is used to treat heart failure and pulmonary hypertension (PH). However, its action on pulmonary veins (PVs) is not defined, although particularly PH due to left heart disease primarily affects the pulmonary venous bed. We examined milrinone-induced relaxation in PVs from guinea pigs (GPs) and humans. Precision-cut lung slices (PCLS) were prepared from GPs or from patients undergoing lobectomy. Milrinone-induced relaxation was studied by videomicroscopy in naïve PVs and in PVs pre-constricted with the ETA-receptor agonist BP0104. Baseline luminal area was defined as 100%. Intracellular cAMP was measured by ELISA and milrinone-induced changes of segmental vascular resistances were studied in the GP isolated perfused lung (IPL). In the IPL (GP), milrinone (10 µM) lowered the postcapillary resistance of pre-constricted vessels. In PCLS (GP), milrinone relaxed naïve and pre-constricted PVs (120%) and this relaxation was attenuated by inhibition of protein kinase G (KT 5823), adenyl cyclase (SQ 22536) and protein kinase A (KT 5720), but not by inhibition of NO-synthesis (L-NAME). In addition, milrinone-induced relaxation was dependent on the activation of K ATP-, BK Ca (2+)- and Kv-channels. Human PVs also relaxed to milrinone (121%), however only if pre-constricted. Milrinone relaxes PVs from GPs and humans. In GPs, milrinone-induced relaxation is based on K ATP-, BK Ca (2+)- and Kv-channel-activation and on cAMP/PKA/PKG. The relaxant properties of milrinone on PVs lead to reduced postcapillary resistance and hydrostatic pressures. Hence they alleviate pulmonary edema and suggest beneficial effects of milrinone in PH due to left heart disease.

Maintainable substrate carrier for electroplating

Science.gov (United States)

Chen, Chen-An [Milpitas, CA; Abas, Emmanuel Chua [Laguna, PH; Divino, Edmundo Anida [Cavite, PH; Ermita, Jake Randal G [Laguna, PH; Capulong, Jose Francisco S [Laguna, PH; Castillo, Arnold Villamor [Batangas, PH; Ma,; Xiaobing, Diana [Saratoga, CA

2012-07-17

One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.

Relaxed Poisson cure rate models.

Science.gov (United States)

Rodrigues, Josemar; Cordeiro, Gauss M; Cancho, Vicente G; Balakrishnan, N

2016-03-01

The purpose of this article is to make the standard promotion cure rate model (Yakovlev and Tsodikov, ) more flexible by assuming that the number of lesions or altered cells after a treatment follows a fractional Poisson distribution (Laskin, ). It is proved that the well-known Mittag-Leffler relaxation function (Berberan-Santos, ) is a simple way to obtain a new cure rate model that is a compromise between the promotion and geometric cure rate models allowing for superdispersion. So, the relaxed cure rate model developed here can be considered as a natural and less restrictive extension of the popular Poisson cure rate model at the cost of an additional parameter, but a competitor to negative-binomial cure rate models (Rodrigues et al., ). Some mathematical properties of a proper relaxed Poisson density are explored. A simulation study and an illustration of the proposed cure rate model from the Bayesian point of view are finally presented. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Peeling mode relaxation ELM model

International Nuclear Information System (INIS)

Gimblett, C. G.

2006-01-01

This paper discusses an approach to modelling Edge Localised Modes (ELMs) in which toroidal peeling modes are envisaged to initiate a constrained relaxation of the tokamak outer region plasma. Relaxation produces both a flattened edge current profile (which tends to further destabilise a peeling mode), and a plasma-vacuum negative current sheet which has a counteracting stabilising influence; the balance that is struck between these two effects determines the radial extent (rE) of the ELM relaxed region. The model is sensitive to the precise position of the mode rational surfaces to the plasma surface and hence there is a 'deterministic scatter' in the results that has an accord with experimental data. The toroidal peeling stability criterion involves the edge pressure, and using this in conjunction with predictions of rE allows us to evaluate the ELM energy losses and compare with experiment. Predictions of trends with the edge safety factor and collisionality are also made

Hot Surface Ignition

OpenAIRE

Tursyn, Yerbatyr; Goyal, Vikrant; Benhidjeb-Carayon, Alicia; Simmons, Richard; Meyer, Scott; Gore, Jay P.

2015-01-01

Undesirable hot surface ignition of flammable liquids is one of the hazards in ground and air transportation vehicles, which primarily occurs in the engine compartment. In order to evaluate the safety and sustainability of candidate replacement fuels with respect to hot surface ignition, a baseline low lead fuel (Avgas 100 LL) and four experimental unleaded aviation fuels recommended for reciprocating aviation engines were considered. In addition, hot surface ignition properties of the gas tu...

Non-permeable substrate carrier for electroplating

Science.gov (United States)

Abas, Emmanuel Chua; Chen, Chen-An; Ma, Diana Xiaobing; Ganti, Kalyana Bhargava

2012-11-27

One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Baryogenesis via Elementary Goldstone Higgs Relaxation

DEFF Research Database (Denmark)

Gertov, Helene; Pearce, Lauren; Sannino, Francesco

2016-01-01

We extend the relaxation mechanism to the Elementary Goldstone Higgs framework. Besides studying the allowed parameter space of the theory we add the minimal ingredients needed for the framework to be phenomenologically viable. The very nature of the extended Higgs sector allows to consider very ...... but radiatively generated, it is possible to generate the observed matter-antimatter asymmetry via the relaxation mechanism....

Disaggregating Hot Water Use and Predicting Hot Water Waste in Five Test Homes

Energy Technology Data Exchange (ETDEWEB)

Henderson, H.; Wade, J.

2014-04-01

While it is important to make the equipment (or 'plant') in a residential hot water system more efficient, the hot water distribution system also affects overall system performance and energy use. Energy wasted in heating water that is not used is estimated to be on the order of 10 to 30 percent of total domestic hot water (DHW) energy use. This field monitoring project installed temperature sensors on the distribution piping (on trunks and near fixtures) and programmed a data logger to collect data at 5 second intervals whenever there was a hot water draw. This data was used to assign hot water draws to specific end uses in the home as well as to determine the portion of each hot water that was deemed useful (i.e., above a temperature threshold at the fixture). Five houses near Syracuse NY were monitored. Overall, the procedures to assign water draws to each end use were able to successfully assign about 50% of the water draws, but these assigned draws accounted for about 95% of the total hot water use in each home. The amount of hot water deemed as useful ranged from low of 75% at one house to a high of 91% in another. At three of the houses, new water heaters and distribution improvements were implemented during the monitoring period and the impact of these improvements on hot water use and delivery efficiency were evaluated.

Disaggregating Hot Water Use and Predicting Hot Water Waste in Five Test Homes

Energy Technology Data Exchange (ETDEWEB)

Henderson, Hugh [ARIES Collaborative, New York, NY (United States); Wade, Jeremy [ARIES Collaborative, New York, NY (United States)

2014-04-01

While it is important to make the equipment (or "plant") in a residential hot water system more efficient, the hot water distribution system also affects overall system performance and energy use. Energy wasted in heating water that is not used is estimated to be on the order of 10%-30% of total domestic hot water (DHW) energy use. This field monitoring project installed temperature sensors on the distribution piping (on trunks and near fixtures) in five houses near Syracuse, NY, and programmed a data logger to collect data at 5 second intervals whenever there was a hot water draw. This data was used to assign hot water draws to specific end uses in the home as well as to determine the portion of each hot water that was deemed useful (i.e., above a temperature threshold at the fixture). Overall, the procedures to assign water draws to each end use were able to successfully assign about 50% of the water draws, but these assigned draws accounted for about 95% of the total hot water use in each home. The amount of hot water deemed as useful ranged from low of 75% at one house to a high of 91% in another. At three of the houses, new water heaters and distribution improvements were implemented during the monitoring period and the impact of these improvements on hot water use and delivery efficiency were evaluated.

Relationship between hot spot residues and ligand binding hot spots in protein-protein interfaces.

Science.gov (United States)

Zerbe, Brandon S; Hall, David R; Vajda, Sandor; Whitty, Adrian; Kozakov, Dima

2012-08-27

In the context of protein-protein interactions, the term "hot spot" refers to a residue or cluster of residues that makes a major contribution to the binding free energy, as determined by alanine scanning mutagenesis. In contrast, in pharmaceutical research, a hot spot is a site on a target protein that has high propensity for ligand binding and hence is potentially important for drug discovery. Here we examine the relationship between these two hot spot concepts by comparing alanine scanning data for a set of 15 proteins with results from mapping the protein surfaces for sites that can bind fragment-sized small molecules. We find the two types of hot spots are largely complementary; the residues protruding into hot spot regions identified by computational mapping or experimental fragment screening are almost always themselves hot spot residues as defined by alanine scanning experiments. Conversely, a residue that is found by alanine scanning to contribute little to binding rarely interacts with hot spot regions on the partner protein identified by fragment mapping. In spite of the strong correlation between the two hot spot concepts, they fundamentally differ, however. In particular, while identification of a hot spot by alanine scanning establishes the potential to generate substantial interaction energy with a binding partner, there are additional topological requirements to be a hot spot for small molecule binding. Hence, only a minority of hot spots identified by alanine scanning represent sites that are potentially useful for small inhibitor binding, and it is this subset that is identified by experimental or computational fragment screening.

The effects of music relaxation and muscle relaxation techniques on sleep quality and emotional measures among individuals with posttraumatic stress disorder

Directory of Open Access Journals (Sweden)

Iris Haimov

2012-07-01

Full Text Available Posttraumatic stress disorder (PTSD, an anxiety disorder with lifetime prevalence of 7.8%, is characterized by symptoms that develop following exposure to traumatic life events and that cause an immediate experience of intense fear, helplessness or horror. PTSD is marked by recurrent nightmares typified by the recall of intrusive experiences and by extended disturbance throughout sleep. Individuals with PTSD respond poorly to drug treatments for insomnia. The disadvantages of drug treatment for insomnia underline the importance of non-pharmacological alternatives. Thus, the present study had three aims: first, to compare the efficiency of two relaxation techniques (muscular relaxation and progressive music relaxation in alleviating insomnia among individuals with PTSD using both objective and subjective measures of sleep quality; second, to examine whether these two techniques have different effects on psychological indicators of PTSD, such as depression and anxiety; and finally, to examine how initial PTSD symptom severity and baseline emotional measures are related to the efficiency of these two relaxation methods. Thirteen PTSD patients with no other major psychiatric or neurological disorders participated in the study. The study comprised one seven-day running-in, no-treatment period, followed by two seven-day experimental periods. The treatments constituted either music relaxation or muscle relaxation techniques at desired bedtime. These treatments were randomly assigned. During each of these three experimental periods, subjects’ sleep was continuously monitored with a wrist actigraph (Ambulatory Monitoring, Inc., and subjects were asked to fill out several questionnaires concerned with a wide spectrum of issues, such as sleep, depression, and anxiety. Analyses revealed a significant increase in objective and subjective sleep efficiency and a significant reduction in depression level following music relaxation. Moreover, following music

Nuclear magnetic relaxation of methyl group in liquids

International Nuclear Information System (INIS)

Blicharska, B.

1986-01-01

The theoretical description of the relaxation process of methyl group in liquids and some results of the measurements of relaxation function and relaxation times for cryoprotective solutions are presented. Starting from the application of the operator formalism the general equation for spin operators e.g. components of the nuclear spin and magnetization is founded. Next, the spin Hamiltonian is presented as contraction of the symmetry adapted spherical tensors as well as the correlation functions and spectral densities. On the basis of extended and modified Woessner model of motion the correlation functions and spectral densities are calculated for methyl group in liquids. Using these functions the relaxation matrix elements, the spin-spin and spin-lattice relaxation times can be expressed. The prediction of the theory agrees with author's previous experiments on cryoprotective solutions. The observed dependence on temperature, frequency and isotopic dilution in methanol-water, methanol-dimethyl sulfoxide (DMSO) and DMSO-water solutions is in a satisfactory agreement with theoretical equations. 34 refs. (author)

Relaxations in spin glasses: Similarities and differences from ordinary glasses

International Nuclear Information System (INIS)

Ngai, K.L.; Rajagopal, A.K.; Huang, C.Y.

1984-01-01

Relaxation phenomena have become a major concern in the physics of spin glasses. There are certain resemblances of these relaxation properties to those of ordinary glasses. In this work, we compare the relaxation properties of spin glasses near the freezing temperature with those of glasses near the glass transition temperature. There are similarities between the two types of glasses. Moreover, the relaxation properties of many glasses and spin glasses are in conformity with two coupled ''universality'' relations predicted by a recent model of relaxations in condensed matter

STAR FORMATION AND RELAXATION IN 379 NEARBY GALAXY CLUSTERS

International Nuclear Information System (INIS)

Cohen, Seth A.; Hickox, Ryan C.; Wegner, Gary A.

2015-01-01

We investigate the relationship between star formation (SF) and level of relaxation in a sample of 379 galaxy clusters at z < 0.2. We use data from the Sloan Digital Sky Survey to measure cluster membership and level of relaxation, and to select star-forming galaxies based on mid-infrared emission detected with the Wide-Field Infrared Survey Explorer. For galaxies with absolute magnitudes M r < −19.5, we find an inverse correlation between SF fraction and cluster relaxation: as a cluster becomes less relaxed, its SF fraction increases. Furthermore, in general, the subtracted SF fraction in all unrelaxed clusters (0.117 ± 0.003) is higher than that in all relaxed clusters (0.097 ± 0.005). We verify the validity of our SF calculation methods and membership criteria through analysis of previous work. Our results agree with previous findings that a weak correlation exists between cluster SF and dynamical state, possibly because unrelaxed clusters are less evolved relative to relaxed clusters

The relaxation of plasmas with dust particles

International Nuclear Information System (INIS)

Chutov, Yu.I.; Kravchenko, A.Yu.; Schram, P.P.J.M.

1997-01-01

Various parameters of relaxing plasmas with dust particles including the electron and ion energy distributions function are numerically simulated at various parameters of the dust particles using the PIC method and taking into account the dynamics of the dust particle charge without the assumption about the equilibrium of electrons and ions. Coulomb collisions are taken into account in the framework of the method of stochastic differential equations. The relaxation of bounded plasma clouds expanding into a vacuum as well as the relaxation of a uniform plasma, in which dust particles appear at some initial time, are investigated. The obtained results show that the relaxation of plasmas can be accompanied by a deviation of the ion distribution function from equilibrium as well as a change of the mean energy of electrons and ions because of the dependence of the collection of electrons and ions by dust particles on their energy. (author)

The modified relaxation time function: A novel analysis technique for relaxation processes. Application to high-temperature molybdenum internal friction peaks

International Nuclear Information System (INIS)

Matteo, C.L.; Lambri, O.A.; Zelada-Lambri, G.I.; Sorichetti, P.A.; Garcia, J.A.

2008-01-01

The modified relaxation time (MRT) function, which is based on a general linear viscoelastic formalism, has several important mathematical properties that greatly simplify the analysis of relaxation processes. In this work, the MRT is applied to the study of the relaxation damping peaks in deformed molybdenum at high temperatures. The dependence of experimental data from these relaxation processes with temperature are adequately described by a Havriliak-Negami (HN) function, and the MRT makes it possible to find a relation between the parameters of the HN function and the activation energy of the process. The analysis reveals that for the relaxation peak appearing at temperatures below 900 K, the physical mechanism is related to a vacancy-diffusion-controlled movement of dislocations. In contrast, when the peak appears at temperatures higher than 900 K, the damping is controlled by a mechanism of diffusion in the low-temperature tail of the peak, and in the high-temperature tail of the peak the creation plus diffusion of vacancies at the dislocation line occurs

Energy flux of hot atoms

International Nuclear Information System (INIS)

Wotzak, G.P.; Kostin, M.D.

1976-01-01

The process in which hot atoms collide with thermal atoms of a gas, transfer kinetic energy to them, and produce additional hot atoms is investigated. A stochastic method is used to obtain numerical results for the spatial and time dependent energy flux of hot atoms in a gas. The results indicate that in hot atom systems a front followed by an intense energy flux of hot atoms may develop

Relationship between Structural and Stress Relaxation in a Block-Copolymer Melt

International Nuclear Information System (INIS)

Patel, Amish J.; Narayanan, Suresh; Sandy, Alec; Mochrie, Simon G. J.; Garetz, Bruce A.; Watanabe, Hiroshi; Balsara, Nitash P.

2006-01-01

The relationship between structural relaxation on molecular length scales and macroscopic stress relaxation was explored in a disordered block-copolymer melt. Experiments show that the structural relaxation time, measured by x-ray photon correlation spectroscopy is larger than the terminal stress relaxation time, measured by rheology, by factors as large as 100. We demonstrate that the structural relaxation data are dominated by the diffusion of intact micelles while the stress relaxation data are dominated by contributions due to disordered concentration fluctuations

Modelling Hot Air Balloons.

Science.gov (United States)

Brimicombe, M. W.

1991-01-01

A macroscopic way of modeling hot air balloons using a Newtonian approach is presented. Misleading examples using a car tire and the concept of hot air rising are discussed. Pressure gradient changes in the atmosphere are used to explain how hot air balloons work. (KR)

Simulation of hole-mobility in doped relaxed and strained Ge layers

Science.gov (United States)

Watling, Jeremy R.; Riddet, Craig; Chan, Morgan Kah H.; Asenov, Asen

2010-11-01

As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limits of their performance with scaling, alternative channel materials are being considered to maintain performance in future complementary metal-oxide semiconductor technology generations. Thus there is renewed interest in employing Ge as a channel material in p-MOSFETs, due to the significant improvement in hole mobility as compared to Si. Here we employ full-band Monte Carlo to study hole transport properties in Ge. We present mobility and velocity-field characteristics for different transport directions in p-doped relaxed and strained Ge layers. The simulations are based on a method for over-coming the potentially large dynamic range of scattering rates, which results from the long-range nature of the unscreened Coulombic interaction. Our model for ionized impurity scattering includes the affects of dynamic Lindhard screening, coupled with phase-shift, and multi-ion corrections along with plasmon scattering. We show that all these effects play a role in determining the hole carrier transport in doped Ge layers and cannot be neglected.

Dielectric relaxation studies of dilute solutions of amides

Energy Technology Data Exchange (ETDEWEB)

Malathi, M.; Sabesan, R.; Krishnan, S

2003-11-15

The dielectric constants and dielectric losses of formamide, acetamide, N-methyl acetamide, acetanilide and N,N-dimethyl acetamide in dilute solutions of 1,4-dioxan/benzene have been measured at 308 K using 9.37 GHz, dielectric relaxation set up. The relaxation time for the over all rotation {tau}{sub (1)} and that for the group rotation {tau}{sub (2)} of (the molecules were determined using Higasi's method. The activation energies for the processes of dielectric relaxation and viscous flow were determined by using Eyring's rate theory. From relaxation time behaviour of amides in non-polar solvent, solute-solvent and solute-solute type of molecular association is proposed.

Relaxation of coupled nuclear spin systems

International Nuclear Information System (INIS)

Koenigsberger, E.

1985-05-01

The subject of the present work is the relaxation behaviour of scalarly coupled spin-1/2 systems. In the theoretical part the semiclassical Redfield equations are used. Dipolar (D), Chemical Shift Anisotropy (CSA) and Random Field (RF) interactions are considered as relaxation mechanisms. Cross correlations of dipolar interactions of different nuclei pairs and those between the D and the CSA mechanisms are important. The model of anisotropic molecular rotational relaxation and the extreme narrowing approximation are used to obtain the spectral density functions. The longitudinal relaxation data are analyzed into normal modes following Werbelow and Grant. The time evolution of normal modes is derived for the AX system with D-CSA cross terms. In the experimental part the hypothesis of dimerization in the cinnamic acid and the methyl cinnamate - AMX systems with DD cross terms - is corroborated by T 1 -time measurements and a calculation of the diffusion constants. In pentachlorobenzene - an AX system - taking into account of D-CSA cross terms enables the complete determination of movements anosotropy and the determination of the sign of the indirect coupling constant 1 Jsub(CH). (G.Q.)

Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

Directory of Open Access Journals (Sweden)

Hao Wu

2016-08-01

Full Text Available The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4 ns at 10 (300 K, which was more than two (four times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

Experiments in paramagnetic relaxation

International Nuclear Information System (INIS)

Lijphart, E.E.

1976-01-01

This thesis presents two attempts to improve the resolving power of the relaxation measurement technique. The first attempt reconsiders the old technique of steady state saturation. When used in conjunction with the pulse technique, it offers the possibility of obtaining additional information about the system in which all-time derivatives are zero; in addition, non-linear effects may be distinguished from each other. The second attempt involved a systematic study of only one system: Cu in the Tutton salts (K and Rb). The systematic approach, the high accuracy of the measurement and the sheer amount of experimental data for varying temperature, magnetic field and concentration made it possible in this case to separate the prevailing relaxation mechanisms reliably

Time-resolved optical studies of wide-gap II-VI semiconductor heterostructures

Science.gov (United States)

Wang, Hong

ZnSe and ZnSe-based quantum well and superlattice structures are potential candidates for light emitting devices and other optical devices such as switches and modulators working in the blue-green wavelength range. Carrier dynamics studies of these structures are important in evaluating device performance as well as understanding the underlying physical processes. In this thesis, a carrier dynamics investigation is conducted for temperature from 77K to 295K on CdZnSSe/ZnSSe single quantum well structure (SQW) and ZnSe/ZnSTe superlattice fabricated by molecular beam epitaxy (MBE). Two experimental techniques with femtosecond time resolution are used in this work: up-conversion technique for time- resolved photoluminescence (PL) and pump-probe technique for time-resolved differential absorption studies. For both heterostructures, the radiative recombination is dominated by exciton transition due to the large exciton binding energy as a result of quantum confinement effect. The measured decay time of free exciton PL in CdZnSSe/ZnSSe SQW increases linearly with increasing temperature which agrees with the theoretical prediction by considering the conservation of momentum requirement for radiative recombination. However, the recombination of free carriers is also observed in CdZnSSe/ZnSSe SQW for the whole temperature range studied. On the other hand, in ZnSe/ZnSTe superlattice structures, the non- radiative recombination processes are non-negligible even at 77K and become more important in higher temperature range. The relaxation processes such as spectral hole burning, carrier thermalization and hot-carrier cooling are observed in ZnSe/ZnSTe superlattices at room temperature (295K) by the femtosecond pump-probe measurements. A rapid cooling of the thermalized hot- carrier from 763K to 450K within 4ps is deduced. A large optical nonlinearity (i.e., the induced absorption change) around the heavy-hole exciton energy is also obtained.

Probing hot-electron effects in wide area plasmonic surfaces using X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ayas, Sencer; Cupallari, Andi; Dana, Aykutlu, E-mail: aykutlu@unam.bilkent.edu.tr [UNAM Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

2014-12-01

Plasmon enhanced hot carrier formation in metallic nanostructures increasingly attracts attention due to potential applications in photodetection, photocatalysis, and solar energy conversion. Here, hot-electron effects in nanoscale metal-insulator-metal (MIM) structures are investigated using a non-contact X-ray photoelectron spectroscopy based technique using continuous wave X-ray and laser excitations. The effects are observed through shifts of the binding energy of the top metal layer upon excitation with lasers of 445, 532, and 650 nm wavelength. The shifts are polarization dependent for plasmonic MIM grating structures fabricated by electron beam lithography. Wide area plasmonic MIM surfaces fabricated using a lithography free route by the dewetting of evaporated Ag on HfO{sub 2} exhibit polarization independent optical absorption and surface photovoltage. Using a simple model and making several assumptions about the magnitude of the photoemission current, the responsivity and external quantum efficiency of wide area plasmonic MIM surfaces are estimated as 500 nA/W and 11 × 10{sup −6} for 445 nm illumination.

Universal Mechanism of Spin Relaxation in Solids

Science.gov (United States)

Chudnovsky, Eugene

2006-03-01

Conventional elastic theory ignores internal local twists and torques. Meantime, spin-lattice relaxation is inherently coupled with local elastic twists through conservation of the total angular momentum (spin + lattice). This coupling gives universal lower bound (free of fitting parameters) on the relaxation of the atomic or molecular spin in a solid [1] and on the relaxation of the electron spin in a quantum dot [2]. [1] E. M. Chudnovsky, D. A. Garanin, and R. Schilling, Phys. Rev. B 72, 094426 (2005). [2] C. Calero, E. M. Chudnovsky, and D. A. Garanin, Phys. Rev. Lett. 95, 166603 (2005).

Le Chatelier's principle with multiple relaxation channels

Science.gov (United States)

Gilmore, R.; Levine, R. D.

1986-05-01

Le Chatelier's principle is discussed within the constrained variational approach to thermodynamics. The formulation is general enough to encompass systems not in thermal (or chemical) equilibrium. Particular attention is given to systems with multiple constraints which can be relaxed. The moderation of the initial perturbation increases as additional constraints are removed. This result is studied in particular when the (coupled) relaxation channels have widely different time scales. A series of inequalities is derived which describes the successive moderation as each successive relaxation channel opens up. These inequalities are interpreted within the metric-geometry representation of thermodynamics.

Slow relaxation in weakly open rational polygons.

Science.gov (United States)

Kokshenev, Valery B; Vicentini, Eduardo

2003-07-01

The interplay between the regular (piecewise-linear) and irregular (vertex-angle) boundary effects in nonintegrable rational polygonal billiards (of m equal sides) is discussed. Decay dynamics in polygons (of perimeter P(m) and small opening Delta) is analyzed through the late-time survival probability S(m) approximately equal t(-delta). Two distinct slow relaxation channels are established. The primary universal channel exhibits relaxation of regular sliding orbits, with delta=1. The secondary channel is given by delta>1 and becomes open when m>P(m)/Delta. It originates from vertex order-disorder dual effects and is due to relaxation of chaoticlike excitations.

Ghost lines in Moessbauer relaxation spectra

International Nuclear Information System (INIS)

Price, D.C.

1985-01-01

The appearance in Moessbauer relaxation spectra of 'ghost' lines, which are narrow lines that do not correspond to transitions between real hyperfine energy levels of the resonant system, is examined. It is shown that in many cases of interest, the appearance of these 'ghost' lines can be interpreted in terms of the relaxational averaging of one or more of the static interactions of the ion. (orig.)

Software Simulation of Hot Tearing

DEFF Research Database (Denmark)

Andersen, S.; Hansen, P.N.; Hattel, Jesper Henri

1999-01-01

The brittleness of a solidifying alloy in a temperature range near the solidus temperature has been recognised since the fifties as the mechanism responsible for hot tearing. Due to this brittlenes, the metal will crack under even small amounts of strain in that temperature range. We see these hot...... tears in castings close to hot centres, where the level of strain is often too high.Although the hot tearing mechanism is well understood, until now it has been difficult to do much to reduce the hot tearing tendency in a casting. In the seventies, good hot tearing criteria were developed by considering...... the solidification rate and the strain rate of the hot tear prone areas. But, until recently it was only possible to simulate the solidification rate, so that the criteria could not be used effectively.Today, with new software developments, it is possible to also simulate the strain rate in the hot tear prone areas...

Momentum and mass relaxation in heavy-ion collisions

International Nuclear Information System (INIS)

Gregoire, C.; Scheuter, F.; Remaud, B.; Sebille, F.

1984-01-01

The momentum and mass relaxation are shown to be described by transport equations. The momentum relaxation, which can be studied in the intermediate energy regime by the particle emissions, refers to a microscopic slowing down and diffusion process in the momentum space. The mass relaxation refers to the coupling of the collective mass asymmetry degree of freedom and the intrinsic system. It can be illustrated by the fast fission of light and very heavy systems

Communication: Relaxation-limited electronic currents in extended reservoir simulations

Science.gov (United States)

Gruss, Daniel; Smolyanitsky, Alex; Zwolak, Michael

2017-10-01

Open-system approaches are gaining traction in the simulation of charge transport in nanoscale and molecular electronic devices. In particular, "extended reservoir" simulations, where explicit reservoir degrees of freedom are present, allow for the computation of both real-time and steady-state properties but require relaxation of the extended reservoirs. The strength of this relaxation, γ, influences the conductance, giving rise to a "turnover" behavior analogous to Kramers turnover in chemical reaction rates. We derive explicit, general expressions for the weak and strong relaxation limits. For weak relaxation, the conductance increases linearly with γ and every electronic state of the total explicit system contributes to the electronic current according to its "reduced" weight in the two extended reservoir regions. Essentially, this represents two conductors in series—one at each interface with the implicit reservoirs that provide the relaxation. For strong relaxation, a "dual" expression-one with the same functional form-results, except now proportional to 1/γ and dependent on the system of interest's electronic states, reflecting that the strong relaxation is localizing electrons in the extended reservoirs. Higher order behavior (e.g., γ2 or 1/γ2) can occur when there is a gap in the frequency spectrum. Moreover, inhomogeneity in the frequency spacing can give rise to a pseudo-plateau regime. These findings yield a physically motivated approach to diagnosing numerical simulations and understanding the influence of relaxation, and we examine their occurrence in both simple models and a realistic, fluctuating graphene nanoribbon.

Lifshitz quasinormal modes and relaxation from holography

NARCIS (Netherlands)

Sybesma, Watse|info:eu-repo/dai/nl/369283074; Vandoren, Stefan|info:eu-repo/dai/nl/304830739

2015-01-01

We obtain relaxation times for field theories with Lifshitz scaling and with holographic duals Einstein-Maxwell-Dilaton gravity theories. This is done by computing quasinormal modes of a bulk scalar field in the presence of Lifshitz black branes. We determine the relation between relaxation time and

Hot tub folliculitis

Science.gov (United States)

... survives in hot tubs, especially tubs made of wood. Symptoms The first symptom of hot tub folliculitis ... may help prevent the problem. Images Hair follicle anatomy References D'Agata E. Pseudomonas aeruginosa and other ...

Effectiveness of relaxation techniques before diagnostic screening of cancer patients

Directory of Open Access Journals (Sweden)

Montserrat Aiger

2016-07-01

Full Text Available Psychophysiological arousal was observed in cancer patients during the application of relaxation techniques prior to a diagnostic scan (PET-CT. The aim of the study is twofold: firstly, it is sought to establish whether such techniques can minimize patient arousal before diagnostic screening begins, and secondly to measure which of them are most effective. The dependent variable is electrodermal activity, recording the attentional level and emotional response, and the independent variable comprises the relaxation techniques used, namely Jacobson, breathing and visualization. The 39 patients were split into experimental groups to whom the relaxation techniques (Jacobson, breathing exercises, and visualization were applied before they went for the PET-CT. An activity-module procedure was applied to track electrodermal activity during the relaxation sessions, consisting of instructions, timeout; wait, task; relaxation and end of the recording session. The control group received no relaxation techniques before the PET-CT. Session-end results show that patients who perform relaxation techniques achieve greater attentional focus using Jacobson's technique (M = .212 and enhanced emotional containment using visualization (M = .206. It is concluded that relaxation techniques minimize the state of activation during the waiting period before a diagnostic scan.

State resolved vibrational relaxation modeling for strongly nonequilibrium flows

Science.gov (United States)

Boyd, Iain D.; Josyula, Eswar

2011-05-01

Vibrational relaxation is an important physical process in hypersonic flows. Activation of the vibrational mode affects the fundamental thermodynamic properties and finite rate relaxation can reduce the degree of dissociation of a gas. Low fidelity models of vibrational activation employ a relaxation time to capture the process at a macroscopic level. High fidelity, state-resolved models have been developed for use in continuum gas dynamics simulations based on computational fluid dynamics (CFD). By comparison, such models are not as common for use with the direct simulation Monte Carlo (DSMC) method. In this study, a high fidelity, state-resolved vibrational relaxation model is developed for the DSMC technique. The model is based on the forced harmonic oscillator approach in which multi-quantum transitions may become dominant at high temperature. Results obtained for integrated rate coefficients from the DSMC model are consistent with the corresponding CFD model. Comparison of relaxation results obtained with the high-fidelity DSMC model shows significantly less excitation of upper vibrational levels in comparison to the standard, lower fidelity DSMC vibrational relaxation model. Application of the new DSMC model to a Mach 7 normal shock wave in carbon monoxide provides better agreement with experimental measurements than the standard DSMC relaxation model.

On the Volterra integral equation relating creep and relaxation

International Nuclear Information System (INIS)

Anderssen, R S; De Hoog, F R; Davies, A R

2008-01-01

The evolving stress–strain response of a material to an applied deformation is causal. If the current response depends on the earlier history of the stress–strain dynamics of the material (i.e. the material has memory), then Volterra integral equations become the natural framework within which to model the response. For viscoelastic materials, when the response is linear, the dual linear Boltzmann causal integral equations are the appropriate model. The choice of one rather than the other depends on whether the applied deformation is a stress or a strain, and the associated response is, respectively, a creep or a relaxation. The duality between creep and relaxation is known explicitly and is referred to as the 'interconversion equation'. Rheologically, its importance relates to the fact that it allows the creep to be determined from knowledge of the relaxation and vice versa. Computationally, it has been known for some time that the recovery of the relaxation from the creep is more problematic than the creep from the relaxation. Recent research, using discrete models for the creep and relaxation, has confirmed that this is an essential feature of interconversion. In this paper, the corresponding result is generalized for continuous models of the creep and relaxation

Axisymmetric force-free states and relaxation of a spheroidal spheromak

International Nuclear Information System (INIS)

Throumoulopoulos, G.N.; Pantis, G.

1990-01-01

Axisymmetric force-free equilibrium eigenstates for a prolate as well as an oblate spheroidal Spheromak with arbitrary elongation are obtained. In the framework of the Woltjer-Taylor relaxation theory the relaxed states are also identified. A simple hypothesis for the relaxation process is introduced, which implies that the plasma relaxes from multitoroidal formations to a singly toroidal configuration, in qualitative agreement with experimental results. (author)

Axisymmetric force-free states and relaxation of a spheroidal spheromak

International Nuclear Information System (INIS)

Throumoulopoulos, G.N.; Pantis, G.

1990-01-01

Axisymmetric force-free equilibrium eigenstates for a prolate as well as an oblate spheroidal spheromak with arbitrary elongation are obtained. In the framework of the Woltjer-Taylor relaxation theory the relaxed states are also identified. A simple hypothesis for the relaxation process is introduced which implies that the plasma relaxes from multitoroidal formations to a singly toroidal configuration in qualitative agreement with experimental results. (Author)

Hot conditioning equipment conceptual design report

International Nuclear Information System (INIS)

Bradshaw, F.W.

1996-01-01

This report documents the conceptual design of the Hot Conditioning System Equipment. The Hot conditioning System will consist of two separate designs: the Hot Conditioning System Equipment; and the Hot Conditioning System Annex. The Hot Conditioning System Equipment Design includes the equipment such as ovens, vacuum pumps, inert gas delivery systems, etc.necessary to condition spent nuclear fuel currently in storage in the K Basins of the Hanford Site. The Hot Conditioning System Annex consists of the facility of house the Hot Conditioning System. The Hot Conditioning System will be housed in an annex to the Canister Storage Building. The Hot Conditioning System will consist of pits in the floor which contain ovens in which the spent nuclear will be conditioned prior to interim storage

Hot conditioning equipment conceptual design report

Energy Technology Data Exchange (ETDEWEB)

Bradshaw, F.W., Westinghouse Hanford

1996-08-06

This report documents the conceptual design of the Hot Conditioning System Equipment. The Hot conditioning System will consist of two separate designs: the Hot Conditioning System Equipment; and the Hot Conditioning System Annex. The Hot Conditioning System Equipment Design includes the equipment such as ovens, vacuum pumps, inert gas delivery systems, etc.necessary to condition spent nuclear fuel currently in storage in the K Basins of the Hanford Site. The Hot Conditioning System Annex consists of the facility of house the Hot Conditioning System. The Hot Conditioning System will be housed in an annex to the Canister Storage Building. The Hot Conditioning System will consist of pits in the floor which contain ovens in which the spent nuclear will be conditioned prior to interim storage.

Relaxation resistance of heat resisting alloys with cobalt

International Nuclear Information System (INIS)

Borzdyka, A.M.

1977-01-01

Relaxation resistance of refractory nickel-chromium alloys containing 5 to 14 % cobalt is under study. The tests involve the use of circular samples at 800 deg to 850 deg C. It is shown that an alloy containing 14% cobalt possesses the best relaxation resistance exceeding that of nickel-chromium alloys without any cobalt by a factor of 1.5 to 2. The relaxation resistance of an alloy with 5% cobalt can be increased by hardening at repeated loading

Multilayer Relaxation and Surface Energies of Metallic Surfaces

Science.gov (United States)

Bozzolo, Guillermo; Rodriguez, Agustin M.; Ferrante, John

1994-01-01

The perpendicular and parallel multilayer relaxations of fcc (210) surfaces are studied using equivalent crystal theory (ECT). A comparison with experimental and theoretical results is made for AI(210). The effect of uncertainties in the input parameters on the magnitudes and ordering of surface relaxations for this semiempirical method is estimated. A new measure of surface roughness is proposed. Predictions for the multilayer relaxations and surface energies of the (210) face of Cu and Ni are also included.