Synthesis of solid and hollow ATO spheres by carbothermal reduction of ATO nanoparticles

International Nuclear Information System (INIS)

Chai Chunfang; Huang Zaiyin; Liao Dankui; Tan Xuecai; Wu Jian; Yuan Aiqun

2007-01-01

Solid and hollow ATO spheres were fabricated by heating ATO nanoparticles and graphite mixture in a tube furnace. The as-synthesized samples were characterized by EDS, XRD, FE-SEM, TEM and HRTEM. The size of the solid spheres could be controlled by adjusting the rate of Ar flow and deposition positions. The hollow spheres were synthesized in an alumina tube system under conditions of a relatively high oxygen concentration. The growth mechanism of solid and hollow spheres was analysed

Determination of corrosion potential of coated hollow spheres

International Nuclear Information System (INIS)

Fedorkova, Andrea; Orinakova, Renata; Orinak, Andrej; Dudrova, Eva; Kupkova, Miriam; Kalavsky, Frantisek

2008-01-01

Copper hollow spheres were created on porous iron particles by electro-less deposition. The consequent Ni plating was applied to improve the mechanical properties of copper hollow micro-particles. Corrosion properties of coated hollow spheres were investigated using potentiodynamic polarisation method in 1 mol dm -3 NaCl solution. Surface morphology and composition were studied by scanning electron microscopy (SEM), light microscopy (LM) and energy-dispersive X-ray spectroscopy (EDX). Original iron particles, uncoated copper spheres and iron particles coated with nickel were studied as the reference materials. The effect of particle composition, particularly Ni content on the corrosion potential value was investigated. The results indicated that an increase in the amount of Ni coating layer deteriorated corrosion resistivity of coated copper spheres. Amount of Ni coating layer depended on conditions of Ni electrolysis, mainly on electrolysis time and current intensity. Corrosion behaviour of sintered particles was also explored by potentiodynamic polarisation experiments for the sake of comparison. Formation of iron rich micro-volumes on the particle surface during sintering caused the corrosion potential shift towards more negative values. A detailed study of the morphological changes between non-sintered and sintered micro-particles provided explanation of differences in corrosion potential (E corr )

Catalyst-Free Synthesis of Hollow-Sphere-Like ZnO and Its Photoluminescence Property

Directory of Open Access Journals (Sweden)

Junye Cheng

2014-01-01

Full Text Available Hollow-sphere-like ZnO was successfully prepared by a facile combustion route at 950°C, and no external catalysts or additives were introduced. The morphology and structure of the hollow-sphere-like ZnO were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, high-resolution transmission electron microscopy (HRTEM, and energy dispersive spectrometer (EDS. The possible growth mechanism was discussed in detail. In addition, the as-obtained hollow-sphere-like ZnO exhibited a strong green emission at 518 nm and a weak UV emission at 385 nm. We believe that the hollow-sphere-like ZnO material may be a good candidate for application in optical devices and catalyst systems.

Fabrication of hollow silica–zirconia composite spheres and their activity for hydrolytic dehydrogenation of ammonia borane

Energy Technology Data Exchange (ETDEWEB)

Umegaki, Tetsuo, E-mail: umegaki.tetsuo@nihon-u.ac.jp [Department of Materials and Applied Chemistry, College of Science and Engineering, Nihon University, 1-8-14, Kanda-Surugadai, Chiyoda-Ku, Tokyo 101-8308 (Japan); Hosoya, Tatsuya; Toyama, Naoki [Department of Materials and Applied Chemistry, College of Science and Engineering, Nihon University, 1-8-14, Kanda-Surugadai, Chiyoda-Ku, Tokyo 101-8308 (Japan); Xu, Qiang [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Kojima, Yoshiyuki [Department of Materials and Applied Chemistry, College of Science and Engineering, Nihon University, 1-8-14, Kanda-Surugadai, Chiyoda-Ku, Tokyo 101-8308 (Japan)

2014-09-01

Highlights: • Hollow silica–zirconia composite spheres were fabricated on polystyrene templates by the sol–gel method. • We study the effect of preparation conditions on the activity for hydrolytic dehydrogenation of ammonia borane. • The activity of hollow silica–zirconia composite spheres depends on wall thickness. - Abstract: In this paper, we report fabrication of hollow silica–zirconia composite spheres by polystyrene (PS) template method and control of wall thickness of the hollow spheres in nanoscale. Both the hollow spheres before and after calcination were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), elemental analysis, and powder X-ray diffraction analysis (XRD). Morphology of the hollow spheres does not significantly change after calcination from the results of SEM and TEM images, while the amount of residual PS templates drastically decreases via the calcination procedure from the results of FTIR and elemental analysis. The sample after calcination mainly includes amorphous silica from the results of XRD, indicating that the hollow silica–zirconia composite spheres consist of amorphous phases and/or fine particles. Wall thicknesses of the samples after calcination are controlled by adjusting the amount of PS template suspension, and hollow silica–zirconia composite spheres with the wall thicknesses of 17.5, 15.0, 10.0, and 2.0 nm are obtained using the PS template suspension of 25.0, 33.5, 100.0, and 400.0 g, respectively. The activities of the hollow spheres for hydrolytic dehydrogenation of ammonia borane (NH{sub 3}BH{sub 3}) were compared. The evolutions of 2.0, 3.1, 5.0, and 8.0 mL hydrogen from aqueous NH{sub 3}BH{sub 3} solution were finished in about 4, 5, 3, and 7 min in the presence of the hollow spheres with wall thicknesses of 17.5, 15.0, 10.0, and 2.0 nm, respectively. The molar ratios of the hydrolytically generated hydrogen to

Hierarchical Ag/AgCl-TiO{sub 2} hollow spheres with enhanced visible-light photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Wang, Xu Long; Yin, Hao Yong [College of Materials Environment Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Nie, Qiu Lin, E-mail: nieqiulin@hdu.edu.cn [College of Materials Environment Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Wu, Wei Wei [College of Materials Environment Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhang, Yang; LiYuan, Qiu [College of Science, Hangzhou Dianzi University, Hangzhou 310018 (China)

2017-01-01

The hierarchical Ag/AgCl-TiO{sub 2} hollow spheres were synthesized by depositing Ag/AgCl nanoparticles on TiO{sub 2} hollow spheres via a precipitation photoreduction method, and they were further characterized using TGA, SEM, TEM, XRD, XPS, UV–vis DRS and photoelectric chemical analysis. The analysis showed that the hierarchical Ag/AgCl-TiO{sub 2} hollow spheres exhibited the highest photocatalytic activity, which was approximately 13 times higher than that of TiO{sub 2} hollow spheres. The high photocatalytic activity of the composites is due to efficient electron-hole pairs separation at the photocatalyst interfaces, and localized surface plasmon resonance of Ag nanoparticles formed on AgCl particles in the degradation reaction. - Highlights: • TiO{sub 2} hollow spheres were prepared by a sacrificial template method. • The hollow spheres were modified with Ag/AgCl to form the heterojunctions. • The modification may produce synergistic effect of LSPR and hollow structure. • Visible light photocatalytic activity was enhanced on this hollow catalyst. • The mechanism of the improved photocatalytic performance was discussed.

Fabrication of porous silver/titania composite hollow spheres with enhanced photocatalytic performance

International Nuclear Information System (INIS)

Li, Sa; Halperin, Shakked O.; Wang, Chang-An

2015-01-01

Silver/titania composite hollow spheres were first synthesized through an in-situ chemical reaction using functional-grouped carbon spheres as the template in this study. The prepared samples were characterized through an X-ray diffraction, N 2 adsorption–desorption, scanning electron microscopy, transmission electron microscopy and UV–Vis spectrophotometer. The photocatalytic activity of as-prepared samples was evaluated by photocatalytic decolorization of Methyl orange (MO) aqueous solution at ambient temperature under UV light. We found a structure with an optimal Ag:TiO 2 composition that exhibited a photodecomposition rate constant more than twice as high as titania hollow spheres lacking silver, and over three times higher than a commercial photocatalyst. - Highlights: • Ag/silver composites. • Hollow spheres. • Photocatalysis enhancement

Nanosized aluminum nitride hollow spheres formed through a self-templating solid-gas interface reaction

International Nuclear Information System (INIS)

Zheng Jie; Song Xubo; Zhang Yaohua; Li Yan; Li Xingguo; Pu Yikang

2007-01-01

Nanosized aluminum nitride hollow spheres were synthesized by simply heating aluminum nanoparticles in ammonia at 1000 deg. C. The as-synthesized sphere shells are polycrystalline with cavity diameters ranging from 15 to 100 nm and shell thickness from 5 to 15 nm. The formation mechanism can be explained by the nanoscale Kirkendall effect, which results from the difference in diffusion rates between aluminum and nitrogen. The Al nanoparticles served as both reactant and templates for the hollow sphere formation. The effects of precursor particle size and temperature were also investigated in terms of product morphology. Room temperature cathode luminescence spectrum of the nanosized hollow spheres showed a broad emission band centered at 415 nm, which is originated from oxygen related luminescence centers. The hollow structure survived a 4-h heat treatment at 1200 deg. C, exhibiting excellent thermal stability. - Graphical abstract: Nanosized aluminum nitride hollow spheres were synthesized by nitridation of aluminum nanoparticles at 1000 deg. C using ammonia

Facile synthesis and electrochemical performances of hollow graphene spheres as anode material for lithium-ion batteries

Science.gov (United States)

Yao, Ran-Ran; Zhao, Dong-Lin; Bai, Li-Zhong; Yao, Ning-Na; Xu, Li

2014-07-01

The hollow graphene oxide spheres have been successfully fabricated from graphene oxide nanosheets utilizing a water-in-oil emulsion technique, which were prepared from natural flake graphite by oxidation and ultrasonic treatment. The hollow graphene oxide spheres were reduced to hollow graphene spheres at 500°C for 3 h under an atmosphere of Ar(95%)/H2(5%). The first reversible specific capacity of the hollow graphene spheres was as high as 903 mAh g-1 at a current density of 50 mAh g-1. Even at a high current density of 500 mAh g-1, the reversible specific capacity remained at 502 mAh g-1. After 60 cycles, the reversible capacity was still kept at 652 mAh g-1 at the current density of 50 mAh g-1. These results indicate that the prepared hollow graphene spheres possess excellent electrochemical performances for lithium storage. The high rate performance of hollow graphene spheres thanks to the hollow structure, thin and porous shells consisting of graphene sheets.

Hydrothermal synthesis of lindgrenite with a hollow and prickly sphere-like architecture

International Nuclear Information System (INIS)

Xu Jiasheng; Xue Dongfeng

2007-01-01

Lindgrenite [Cu 3 (OH) 2 (MoO 4 ) 2 ] with a hollow and prickly sphere-like architecture has been synthesized via a simple and mild hydrothermal route in the absence of any external inorganic additives or organic structure-directing templates. The hierarchical lindgrenite particles are hollow and prickly spheres, which are comprised of numerous small crystal strips that are aligned perpendicularly to the spherical surface. Two factors are important for the formation of hollow and prickly architecture in the present process. One is the general phenomenon of Ostwald ripening in solution, which can be responsible for the hollow structure; the other is that lindgrenite crystals have a rhombic growth habit, which plays an important role in the formation of prickly surface. Furthermore, Cu 3 Mo 2 O 9 with the similar size and morphology can be easily obtained by a simple thermal treatment of the as-prepared lindgrenite in air atmosphere. - Graphical abstract: Lindgrenite [Cu 3 (OH) 2 (MoO 4 ) 2 ] with a hollow and prickly sphere-like architecture has been synthesized via a hydrothermal route. The hierarchical lindgrenite particles are hollow and prickly spheres, which are comprised of numerous crystal strips that are aligned perpendicularly to the spherical surface. Cu 3 Mo 2 O 9 with the similar size and morphology can be easily obtained by a thermal treatment of the as-prepared lindgrenite

Template free fabrication of hollow hematite spheres via a one-pot polyoxometalate-assisted hydrolysis process

International Nuclear Information System (INIS)

Mao Baodong; Kang Zhenhui; Wang Enbo; Tian Chungui; Zhang Zhiming; Wang Chunlei; Song Yanli; Li Meiye

2007-01-01

Uniform hollow hematite (α-Fe 2 O 3 ) spheres with diameter of about 600-700 nm and shell thickness lower than 100 nm are obtained by direct hydrothermal treatment of dilute FeCl 3 and tungstophosphoric acid H 3 PW 12 O 40 solution at 180 deg. C. The hollow spheres are composed of robust shells with small nanoparticles standing out of the surface and present a high-surface area and a weak ferromagnetic behavior at room temperature. The effect of concentration of H 3 PW 12 O 40 , reaction time and temperature for the formation of the hollow spheres are investigated in series of experiments. The formation of the hollow spheres may be ascribed to a polyoxometalte-assisted forced hydrolysis and dissolution process. - Graphical abstract: Uniform hollow hematite (α-Fe 2 O 3 ) spheres with diameter of about 600-700 nm and shell thickness lower than 100 nm are obtained by direct hydrothermal treatment of dilute FeCl 3 and tungstophosphoric acid H 3 PW 12 O 40 solution at 180 deg. C. The hollow spheres present a high surface area and weak ferromagnetic behavior at room temperature

Hierarchical VOOH hollow spheres for symmetrical and asymmetrical supercapacitor devices

Science.gov (United States)

Jing, Xuyang; Wang, Cong; Feng, Wenjing; Xing, Na; Jiang, Hanmei; Lu, Xiangyu; Zhang, Yifu; Meng, Changgong

2018-01-01

Hierarchical VOOH hollow spheres with low crystallinity composed of nanoparticles were prepared by a facile and template-free method, which involved a precipitation of precursor microspheres in aqueous solution at room temperature and subsequent hydrothermal reaction. Quasi-solid-state symmetric and asymmetric supercapacitor (SSC and ASC) devices were fabricated using hierarchical VOOH hollow spheres as the electrodes, and the electrochemical properties of the VOOH//VOOH SSC device and the VOOH//AC ASC device were studied by cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) and electrochemical impedance spectroscopy (EIS). Results demonstrated that the electrochemical performance of the VOOH//AC ASC device was better than that of the VOOH//VOOH SSC device. After 3000 cycles, the specific capacitance of the VOOH//AC ASC device retains 83% of the initial capacitance, while the VOOH//VOOH SSC device retains only 7.7%. Findings in this work proved that hierarchical VOOH hollow spheres could be a promising candidate as an ideal electrode material for supercapacitor devices.

MoS2 coated hollow carbon spheres for anodes of lithium ion batteries

International Nuclear Information System (INIS)

Zhang, Yufei; Wang, Ye; Shi, Wenhui; Yang, Huiying; Yang, Jun; Huang, Wei; Dong, Xiaochen

2016-01-01

With the assistance of resorcinol–formaldehyde, MoS 2 coated hollow carbon spheres (C@MoS 2 ) were synthesized through a facile hydrothermal route followed by heat and alkali treatments. The measurements indicate that the hollow carbon spheres with an average diameter of 300 nm and shell thickness of 20 nm. And the hollow core are uniformly covered by ultrathin MoS 2 nanosheets with a length increased to 400 nm. The unique hollow structure and the synergistic effect between carbon layer and MoS 2 nanosheets significantly enhance the rate capability and electrochemical stability of C@MoS 2 spheres as anode material of lithium-ion battery. The synthesized C@MoS 2 delivered a capacity of 750 mAh g −1 at a current density of 100 mA g −1 . More importantly, the C@MoS 2 maintained a reversible capacity of 533 mAh g −1 even at a high current density of 1000 mA g −1 . The study indicated that MoS 2 coated hollow carbon spheres can be promising anode material for next generation high-performance lithium-ion batteries. (paper)

Three-dimensional interconnected cobalt oxide-carbon hollow spheres arrays as cathode materials for hybrid batteries

Directory of Open Access Journals (Sweden)

Jiye Zhan

2016-06-01

Full Text Available Hierarchical porous metal oxides arrays is critical for development of advanced energy storage devices. Herein, we report a facile template-assisted electro-deposition plus glucose decomposition method for synthesis of multilayer CoO/C hollow spheres arrays. The CoO/C arrays consist of multilayer interconnected hollow composite spheres with diameters of ∼350 nm as well as thin walls of ∼20 nm. Hierarchical hollow spheres architecture with 3D porous networks are achieved. As cathode of high-rate hybrid batteries, the multilayer CoO/C hollow sphere arrays exhibit impressive enhanced performances with a high capacity (73.5 mAh g−1 at 2 A g−1, and stable high-rate cycling life (70 mAh g−1 after 12,500 cycles at 2 A g−1. The improved electrochemical performance is owing to the composite hollow-sphere architecture with high contact area between the active materials and electrolyte as well as fast ion/electron transportation path.

Comparison of NiS2 and α-NiS hollow spheres for supercapacitors, non-enzymatic glucose sensors and water treatment.

Science.gov (United States)

Wei, Chengzhen; Cheng, Cheng; Cheng, Yanyan; Wang, Yan; Xu, Yazhou; Du, Weimin; Pang, Huan

2015-10-21

NiS2 hollow spheres are successfully prepared by a one-step template free method. Meanwhile, α-NiS hollow spheres can also be synthesized via the calcination of the pre-obtained NiS2 hollow spheres at 400 °C for 1 h in air. The electrochemical performances of the as-prepared NiS2 and α-NiS hollow sphere products are evaluated. When used for supercapacitors, compared with NiS2 hollow spheres, the α-NiS hollow sphere electrode shows a large specific capacitance of 717.3 F g(-1) at 0.6 A g(-1) and a good cycle life. Furthermore, NiS2 and α-NiS hollow spheres are successfully applied to fabricate non-enzymatic glucose sensors. In particular, the α-NiS hollow spheres exhibit good catalytic activity for the oxidation of glucose, a fast amperometric response time of less than 5 s, and the detection limit is estimated to be 0.08 μM. More importantly, compared with other normally co-existing interfering species, such as ascorbic acid, uric acid and dopamine, the electrode modified with α-NiS hollow spheres shows good selectivity. Moreover, the α-NiS hollow spheres also present good capacity to remove Congo red organic pollutants from wastewater by their surface adsorption ability.

Epitaxial GaN around ZnO nanopillars

Energy Technology Data Exchange (ETDEWEB)

Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

2011-07-01

We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

Synthesis and characterization of ZnO and TiO2 hollow spheres with enhanced photoreactivity

International Nuclear Information System (INIS)

Li Xiaofang; Lv Kangle; Deng Kejian; Tang Junfeng; Su Rong; Sun Jie; Chen Lianqing

2009-01-01

To study the relationship between the morphology and the photoreactivity of the catalyst, hollow spheres of two semiconductors of ZnO and TiO 2 were synthesized by using sulfonated polystyrene (PS) as template. The catalyst samples were then characterized by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), diffuse reflectance spectra (DRS), transmission electron microscopy (TEM) and N 2 sorption. Reactive brilliant red X3B, an anionic organic dye, was used in this study as a model chemical with the aim of organic pollutants control. The results show that, whatever the catalyst was, both the adsorptive ability and photoreactivity of the hollow spheres were much higher than that of nanoparticles. The adsorption and photoreactivity of ZnO hollow spheres increased by a factor of 7.36 and 4.66, respectively compared with ZnO nanoparticles, while 3.74 times increased in adsorption and 3.41 times increased in photoreactivity for TiO 2 hollow spheres compared with TiO 2 nanoparticles. Correlations between adsorption and photoreactivity reflected the importance of adsorption in the enhanced photoreactivity of ZnO and TiO 2 hollow spheres

Zinc oxide hollow micro spheres and nano rods: Synthesis and applications in gas sensor

International Nuclear Information System (INIS)

Jamil, Saba; Janjua, Muhammad Ramzan Saeed Ashraf; Ahmad, Tauqeer; Mehmood, Tahir; Li, Songnan; Jing, Xiaoyan

2014-01-01

Zinc oxide nano rods and micro hollow spheres are successfully fabricated by adopting a simple solvo-thermal approach without employing any surfactant/template by keeping heating time as variable. The prepared products are characterized by using different instruments such as X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). In order to investigate the morphological dependence on the reaction time, analogous experiments with various reaction times are carried out. Depending upon heating time, different morphological forms have been identified such as hollow microsphere (4 μm to 5 μm) and nano rods with an average diameter of approximately 100 nm. The fabricated materials are also tested for ethanol gas sensor applications and zinc oxide hollow microsphere proven to be an efficient gas sensing materials. Nitrogen adsorption–desorption measurement was performed to understand better performance of zinc oxide micro hollow spheres as effective ethanol gas sensing material. - Graphical abstract: Graphical abstract is represented by zinc oxide sphere (prepared by simple solvothermal approach), its XRD pattern(characterization) and finally its application in gas sensing. - Highlights: • Zinc oxide spheres were prepared by using solvothermal method. • Detailed description of the morphology of microspheres assembled by nano rods. • Formation mechanism of zinc oxide spheres assembled by nano rods. • Zinc oxide spheres and nano rods displayed very good gas sensing ability

Influence of preparation conditions of hollow silica–nickel composite spheres on their catalytic activity for hydrolytic dehydrogenation of ammonia borane

Energy Technology Data Exchange (ETDEWEB)

Umegaki, Tetsuo, E-mail: umegaki.tetsuo@nihon-u.ac.jp [Department of Materials and Applied Chemistry, College of Science and Engineering, Nihon University, 1-8-14, Kanda-Surugadai, Chiyoda-Ku, Tokyo 101-8308 (Japan); Seki, Ayano [Department of Materials and Applied Chemistry, College of Science and Engineering, Nihon University, 1-8-14, Kanda-Surugadai, Chiyoda-Ku, Tokyo 101-8308 (Japan); Xu, Qiang [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Kojima, Yoshiyuki [Department of Materials and Applied Chemistry, College of Science and Engineering, Nihon University, 1-8-14, Kanda-Surugadai, Chiyoda-Ku, Tokyo 101-8308 (Japan)

2014-03-05

Highlights: • We study influence of preparation conditions on activity of hollow silica–nickel composite spheres. • The activity for hydrolytic dehydrogenation of NH{sub 3}BH{sub 3} increases with increase of Si+Ni content. • The particle size distribution affects the activity and reducibility of active nickel species. • The amount of PS residue in the hollow spheres decreases by treatment of as-prepared sample in toluene. -- Abstract: In this paper, we investigated influence of preparation conditions of hollow silica–nickel composite spheres on their morphology and catalytic activity for hydrolytic dehydrogenation of ammonia borane. In the preparation method of this study, when silica–nickel composite shells were coated on polystyrene templates by the sol–gel method using L(+)-arginine as the promoter for the reaction to form silica–nickel composite shell, the polystyrene templates were dissolved subsequently, even synchronously, in the same medium to form hollow spheres. The as-prepared silica–nickel composite spheres were characterized by transmission electron microscopy and scanning electron microscopy. The effects of Si+Ni content on the morphology were systematically evaluated. All the as-prepared hollow silica–nickel composite spheres have the similar morphology as identified by SEM and TEM measurement. Homogeneity of the hollow silica–nickel composite spheres increases with the increase in the Si+Ni content as shown by the laser diffraction particle size analysis. The catalytic activities of the hollow silica–nickel composite spheres for hydrolytic dehydrogenation of ammonia borane prepared with different Si+Ni contents were compared. The catalytic activity for the hydrogen evolution in the presence of the hollow spheres increases with the increase of Si+Ni content. The results of FTIR spectra of the hollow silica–nickel composite spheres indicate that a certain amount of residual PS templates exists in hollow silica�

TEACHING PHYSICS: Biking around a hollow sphere

Science.gov (United States)

Mak, Se-yuen; Yip, Din-yan

1999-11-01

The conditions required for a cyclist riding a motorbike in a horizontal circle on or above the equator of a hollow sphere are derived using concepts of equilibrium and the condition for uniform circular motion. The result is compared with an empirical analysis based on a video show. Some special cases of interest derived from the general solution are elaborated.

Synthesis of Hollow Sphere and 1D Structural Materials by Sol-Gel Process.

Science.gov (United States)

Li, Fa-Liang; Zhang, Hai-Jun

2017-08-25

The sol-gel method is a simple and facile wet chemical process for fabricating advanced materials with high homogeneity, high purity, and excellent chemical reactivity at a relatively low temperature. By adjusting the processing parameters, the sol-gel technique can be used to prepare hollow sphere and 1D structural materials that exhibit a wide application in the fields of catalyst, drug or gene carriers, photoactive, sensors and Li-ion batteries. This feature article reviewed the development of the preparation of hollow sphere and 1D structural materials using the sol-gel method. The effects of calcination temperature, soaking time, pH value, surfactant, etc., on the preparation of hollow sphere and 1D structural materials were summarized, and their formation mechanisms were generalized. Finally, possible future research directions of the sol-gel technique were outlined.

Characterization of silane coated hollow sphere alumina-reinforced

Indian Academy of Sciences (India)

Silane coated hollow sphere alumina ceramic particles were moulded with ultra high molecular weight polyethylene (UHMWPE) to form a series of composites with alumina weight percent in the range from 15 to 50. The composites were prepared in a cylindrical mould using powder-processing technique. The composites ...

Influence of preparation conditions of hollow titania–nickel composite spheres on their catalytic activity for hydrolytic dehydrogenation of ammonia borane

Energy Technology Data Exchange (ETDEWEB)

Umegaki, Tetsuo, E-mail: umegaki.tetsuo@nihon-u.ac.jp [Department of Materials and Applied Chemistry, College of Science and Technology, Nihon University, 1-8-14, Kanda-Surugadai, Chiyoda-Ku, Tokyo 101-8308 (Japan); Ohashi, Takato [Department of Materials and Applied Chemistry, College of Science and Technology, Nihon University, 1-8-14, Kanda-Surugadai, Chiyoda-Ku, Tokyo 101-8308 (Japan); Xu, Qiang [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Kojima, Yoshiyuki [Department of Materials and Applied Chemistry, College of Science and Technology, Nihon University, 1-8-14, Kanda-Surugadai, Chiyoda-Ku, Tokyo 101-8308 (Japan)

2014-04-01

Highlights: • We study influence of preparation conditions on activity of hollow titania–nickel composite spheres. • The activity for hydrolytic dehydrogenation of NH{sub 3}BH{sub 3} increases with increase of Ti + Ni content. • The activity depends on the amount of PS residue in the hollow spheres. - Abstract: The present work reports influence of preparation conditions of hollow titania–nickel composite spheres on their morphology and catalytic activity for hydrolytic dehydrogenation of ammonia borane (NH{sub 3}BH{sub 3}). The as-prepared hollow titania–nickel composite spheres were characterized by transmission electron microscopy (TEM). Catalytic activities of the hollow spheres for hydrolytic dehydrogenation of aqueous NaBH{sub 4}/NH{sub 3}BH{sub 3} solution improve with the decrease of Ti + Ni content. From the results of FTIR spectra and elemental analysis, the amount of residual polystyrene (PS) templates is able to be reduced by increasing aging time for the preparation, and the catalytic activity of the hollow spheres increases when the amount of residual PS templates decreases. The carbon content in the hollow spheres prepared with aging time = 24 h is 17.3 wt.%, and the evolution of 62 mL hydrogen is finished in about 22 min in the presence of the hollow spheres from aqueous NaBH{sub 4}/NH{sub 3}BH{sub 3} solution. The molar ratio of the hydrolytically generated hydrogen to the initial NH{sub 3}BH{sub 3} in the presence of the hollow spheres is 2.7.

Preparation of porous hollow silica spheres via a layer-by-layer process and the chromatographic performance

Science.gov (United States)

Wei, Xiaobing; Gong, Cairong; Chen, Xujuan; Fan, Guoliang; Xu, Xinhua

2017-03-01

Hollow silica spheres possessing excellent mechanical properties were successfully prepared through a layer-by-layer process using uniform polystyrene (PS) latex fabricated by dispersion polymerization as template. The formation of hollow SiO2 micro-spheres, structures and properties were observed in detail by zeta potential, SEM, TEM, FTIR, TGA and nitrogen sorption porosimetry. The results indicated that the hollow spheres were uniform with particle diameter of 1.6 μm and shell thickness of 150 nm. The surface area was 511 m2/g and the pore diameter was 8.36 nm. A new stationary phase for HPLC was obtained by using C18-derivatized hollow SiO2 micro-spheres as packing materials and the chromatographic properties were evaluated for the separation of some regular small molecules. The packed column showed low column pressure, high values of efficiency (up to about 43 000 plates/m) and appropriate asymmetry factors.

Facile synthesis and microwave absorbability of C@Ni–NiO core–shell hybrid solid sphere and multi-shelled NiO hollow sphere

International Nuclear Information System (INIS)

Wu, Hongjing; Wu, Guanglei; Wu, Qiaofeng; Wang, Liuding

2014-01-01

We reported the preparation of C@Ni–NiO core–shell hybrid solid spheres or multi-shelled NiO hollow spheres by combining a facile hydrothermal route with a calcination process in H 2 or air atmosphere, respectively. The synthesized C@Ni–NiO core–shell solid spheres with diameters of approximately 2–6 μm were in fact built from dense NiO nanoparticles coated by random two-dimensional metal Ni nanosheets without any visible pores. The multi-shelled NiO hollow spheres were built from particle-like ligaments and there are a lot of pores with size of several nanometers on the surface. Combined Raman spectra with X-ray photoelectron spectra (XPS), it suggested that the defects in the samples play a limited role in the dielectric loss. Compared with the other samples, the permeability of the samples calcined in H 2 and air was increased slightly and the natural resonance frequency shifted to higher frequency (7, 11 and 14 GHz, respectively), leading to an enhancement of microwave absorption property. For the sample calcined in H 2 , an optimal reflection loss less than − 10 was obtained at 7 GHz with a matching thickness of 5.0 mm. Our study demonstrated the potential application of C@Ni–NiO core–shell hybrid solid sphere or multi-shelled NiO hollow sphere as a more efficient electromagnetic (EM) wave absorber. - Highlights: • C@Ni–NiO core–shell hybrid solid sphere was synthesized by a facile method. • Multi-shelled NiO hollow sphere was synthesized by a facile method. • It suggested that the defects in the samples play a limited role in dielectric loss. • The permeability of the samples calcined in H 2 and air was increased. • Microwave absorbability of C@Ni–NiO core–shell hybrid solid sphere was investigated

Nanotubes within transition metal silicate hollow spheres: Facile preparation and superior lithium storage performances

Energy Technology Data Exchange (ETDEWEB)

Zhang, Fan; An, Yongling; Zhai, Wei; Gao, Xueping [Key Laboratory for Liquid–Solid Structural Evolution & Processing of Materials (Ministry of Education), Jinan 250100 (China); Feng, Jinkui, E-mail: jinkui@sdu.edu.cn [Key Laboratory for Liquid–Solid Structural Evolution & Processing of Materials (Ministry of Education), Jinan 250100 (China); Ci, Lijie [Key Laboratory for Liquid–Solid Structural Evolution & Processing of Materials (Ministry of Education), Jinan 250100 (China); Xiong, Shenglin [School of Materials Science and Engineering, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100 (China)

2015-10-15

Highlights: • The hollow Co{sub 2}SiO{sub 4}, MnSiO{sub 3} and CuSiO{sub 3} were successfully prepared by a facile hydrothermal method using SiO{sub 2} nanosphere. • The hollow Co{sub 2}SiO{sub 4}, MnSiO{sub 3} and CuSiO{sub 3} were tested as anode materials for lithium batteries. • The hollow Co{sub 2}SiO{sub 4}, MnSiO{sub 3} and CuSiO{sub 3} delivered superior electrochemical performance. • The lithium storage mechanism is probe via cyclic voltammetry and XPS. - Abstract: A series of transition metal silicate hollow spheres, including cobalt silicate (Co{sub 2}SiO{sub 4}), manganese silicate (MnSiO{sub 3}) and copper silicate (CuSiO{sub 3}.2H{sub 2}O, CuSiO{sub 3} as abbreviation in the text) were prepared via a simple and economic hydrothermal method by using silica spheres as chemical template. Time-dependent experiments confirmed that the resultants formed a novel type of hierarchical structure, hollow spheres assembled by numerous one-dimensional (1D) nanotubes building blocks. For the first time, the transition metal silicate hollow spheres were characterized as novel anode materials of Li-ion battery, which presented superior lithium storage capacities, cycle performance and rate performance. The 1D nanotubes assembly and hollow interior endow this kind of material facilitate fast lithium ion and electron transport and accommodate the big volume change during the conversion reactions. Our study shows that low-cost transition metal silicate with rationally designed nanostructures can be promising anode materials for high capacity lithium-ion battery.

Facile Synthesis of Micron-Sized Hollow Silver Spheres as Substrates for Surface-Enhanced Raman Scattering

Directory of Open Access Journals (Sweden)

Lixin Xia

2014-01-01

Full Text Available A well-designed type of micron-sized hollow silver sphere was successfully synthesized by a simple hard-template method to be used as substrates for surface-enhanced Raman scattering. 4 Å molecular sieves were employed as a removable solid template. [Ag(NH32]+ was absorbed as the precursor on the surface of the molecular sieve. Formaldehyde was selected as a reducing agent to reduce [Ag(NH32]+, resulting in the formation of a micron-sized silver shell on the surface of the 4 Å molecular sieves. The micron-sized hollow silver spheres were obtained by removing the molecular sieve template. SEM and XRD were used to characterize the structure of the micron-sized hollow silver spheres. The as-prepared micro-silver spheres exhibited robust SERS activity in the presence of adsorbed 4-mercaptobenzoic acid (4-MBA with excitation at 632.8 nm, and the enhancement factor reached ~1.5 × 106. This synthetic process represents a promising method for preparing various hollow metal nanoparticles.

Synthesis of Br-doped TiO{sub 2} hollow spheres with enhanced photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Wang, Qianqian; Zhu, Shengli, E-mail: slzhu@tju.edu.cn; Liang, Yanqin; Cui, Zhenduo; Yang, Xianjin [Tianjin University, School of Materials Science and Engineering (China); Liang, Chunyong [Hebei University of Technology, Research Institute for Energy Equipment Materials (China); Inoue, Akihisa [Tianjin University, School of Materials Science and Engineering (China)

2017-02-15

The Br-doped hollow TiO{sub 2} photocatalysts were prepared by a simple hydrothermal process on the carbon sphere template following with calcination at 400 °C. The structure and properties of photocatalysts were characterized by X-ray diffraction, Raman spectrum, scanning electron microscope, transmission electron microscopy, N{sub 2} desorption–adsorption, UV–Vis spectroscopy, and X-ray photoelectron spectroscopy. The TiO{sub 2} hollow spheres are in diameter of 500 nm with shell thickness of 50 nm. The shell is composed of small anatase nanoparticles with size of about 10 nm. The TiO{sub 2} hollow spheres exhibit high crystalline and high surface area of 89.208 m{sup 2}/g. With increasing content of Br doping, the band gap of TiO{sub 2} hollow spheres decreased from 2.85 to 1.75 eV. The formation of impurity band in the band gap would narrow the band gap and result in the red shift of absorption edge from 395 to 517 nm, which further enhances the photocatalytic activity. The appropriate Br doping improves the photocatlytic activity significantly. The TiO{sub 2} hollow spheres with 1.55% Br doping (0.5Br-TiO{sub 2}) exhibit the highest photocatalytic activity under full light. More than 98% of RhB, MO, and MB can be photodegraded using 0.5Br-TiO{sub 2} with concentration of 10 mg/L in 40, 30, and 30 min, respectively. The degradation rate of Br-doped photocatalysts was 40% faster than undoped ones.

A Convenient and Templated Method for the Fabrication of Monodisperse Micrometer Hollow Titania Spheres

Directory of Open Access Journals (Sweden)

Haibo Yao

2013-01-01

Full Text Available A simple and widely applicable methodology was presented to synthesize monodisperse micrometer hollow titania spheres (HTS based on the templating method. It was performed by using the preformed poly(styrene-acrylic acid (PSA as template spheres which was mixed with tetrabutyltitanate (TBOT in an ethanol solvent under steam treatment. The HTS which were obtained by the calcination of PSA/TiO2 composite core-shell spheres had a narrow particle size distribution and commendable surface topography characterized by SEM. The calcined HTS at 500°C displayed crystalline reflection peaks that were characteristic to the anatase phase by XRD. Moreover, some key influencing factors including TBOT concentration and reaction time were analyzed. As expected, the diameter of HTS could be readily controlled by altering the size of PSA template spheres. In addition, the approach was also applied to fabricate hollow zirconia spheres and other inorganic spheres.

Stress in piezoelectric hollow sphere with thermal gradient

International Nuclear Information System (INIS)

Saadatfar, M.; Rastgoo, A.

2008-01-01

The piezoelectric phenomenon has been exploited in science and engineering for decades. Recent advances in smart structures technology have led to a resurgence of interest in piezoelectricity, and in particular, in the solution of fundamental boundary value problems. In this paper, we develop an analytic solution to the axisymmetric problem of a radially polarized, spherically isotropic piezoelectric hollow sphere. The sphere is subjected to uniform internal pressure, or uniform external pressure, or both and thermal gradient. There is a constant thermal difference between its inner and outer surfaces. An analytic solution to the governing equilibrium equations (a coupled system of second-order ordinary differential equations) is obtained. On application of the boundary conditions, the problem is reduced to solving a system of linear algebraic equations. Finally, the stress distributions in the sphere are obtained numerically for two piezoceramics

Nanoporous CuS nano-hollow spheres as advanced material for high-performance supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Heydari, Hamid [Faculty of Sciences, Razi University, Kermanshah (Iran, Islamic Republic of); Moosavifard, Seyyed Ebrahim, E-mail: info_seyyed@yahoo.com [Young Researchers and Elite Club, Central Tehran Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Elyasi, Saeed [Department of Chemical Engineering, Sharif University of Technology, Tehran (Iran, Islamic Republic of); Shahraki, Mohammad [Department of Chemistry, University of Sistan and Baluchestan, Zahedan (Iran, Islamic Republic of)

2017-02-01

Highlights: • Nanoporous CuS nano-hollow spheres were synthesized by a facile method. • Nano-hollow spheres have a large specific surface area (97 m{sup 2} g{sup −1}) and nanoscale shell thickness (<20 nm). • Such unique structures exhibit excellent electrochemical properties for high-performance SCs. - Abstract: Due to unique advantages, the development of high-performance supercapacitors has stimulated a great deal of scientific research over the past decade. The electrochemical performance of a supercapacitor is strongly affected by the surface and structural properties of its electrode materials. Herein, we report a facile synthesis of high-performance supercapacitor electrode material based on CuS nano-hollow spheres with nanoporous structures, large specific surface area (97 m{sup 2} g{sup −1}) and nanoscale shell thickness (<20 nm). This interesting electrode structure plays a key role in providing more active sites for electrochemical reactions, short ion and electron diffusion pathways and facilitated ion transport. The CuS nano-hollow spheres electrode exhibits excellent electrochemical performance including a maximum specific capacitance of 948 F g{sup −1} at 1 A g{sup −1}, significant rate capability of 46% capacitance retention at a high current density of 50 A g{sup −1}, and outstanding long-term cycling stability at various current densities. This work not only demonstrates the promising potential of the CuS-NHS electrodes for application in high-performance supercapacitors, but also sheds a new light on the metal sulfides design philosophy.

Synthesis and characterization of Mg-doped ZnO hollow spheres

International Nuclear Information System (INIS)

Hammad, Talaat M.; Salem, Jamil K.

2011-01-01

Mg-doped ZnO nanoparticles were synthesized by a simple chemical method at low temperature with Mg:Zn atomic ratio from 0 to 7%. The synthesis process is based on the hydrolysis of zinc acetate dihydrate and magnesium acetate tetrahydrate were heated under refluxing at 65 °C using methanol as a solvent. X-ray diffraction analysis reveals that the Mg-doped ZnO crystallizes in a wurtzite structure with crystal size of 5–12 nm. These nanocrystals self-aggregated themselves into hollow spheres of size of 800–1100 nm. High resolution transmission electron microscopy images show that each sphere is made up of numerous nanoparticles of average diameter 5–11 nm. The XRD patterns, SEM and TEM micrographs of doping of Mg in ZnO confirmed the formation of hollow spheres indicating that the Mg 2+ is successfully substituted into the ZnO host structure of the Zn 2+ site. Furthermore, the UV–Vis spectra and photoluminescence (PL) spectra of the ZnO nanoparticles were also investigated. The band gap of the nanoparticles can be tuned in the range of 3.36–3.55 eV by the use of the dopants.

Uniform hollow Fe3O4 spheres prepared by template-free solvothermal method as anode material for lithium-ion batteries

International Nuclear Information System (INIS)

Zhang Jingjing; Yao Yu; Huang Tao; Yu Aishui

2012-01-01

Graphical abstract: Unique hollow Fe 3 O 4 spheres assembled by Fe 3 O 4 nanoparticles prepared by a simple template-free solvothermal reaction are tested as anode material for lithium-ion batteries. The results show that the material delivers reversible specific capacities of 870 mA h g −1 even after 50 cycles at 100 mA g −1 and 836 mA h g −1 at 500 mA g −1 . The excellent electrochemical performance can be attributed to their hollow nanostructure and excellent structural stability. Highlights: ► Uniform hollow Fe 3 O 4 spheres were prepared by a template-free solvothermal method. ► The hollow Fe 3 O 4 spheres have the capacity of 870 mA h g −1 at 50th cycle. ► The specific capacity can be well maintained at a large current density. ► The hollow Fe 3 O 4 spheres exhibit enhanced rate capability. ► Electrochemical performance of hollow Fe 3 O 4 spheres is better than Fe 3 O 4 powders. - Abstract: Unique hollow Fe 3 O 4 spheres are prepared by a simple template-free solvothermal reaction. In the reaction, ethylene glycol (EG) and polyvinylpyrrolidone (PVP) serve as the reducing agent and surface stabilizer, respectively. NH 4 Ac plays the role of the structure-directing agent, which combines with the Ostwald ripening process, resulting in the favored formation of hollow structures. The morphologies and structures are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The hollow Fe 3 O 4 spheres exhibit excellent cycling and rate performance as anode material for lithium-ion batteries, delivering reversible specific capacities of 870 mA h g −1 even after 50 cycles at 100 mA g −1 and 836 mA h g −1 at 500 mA g −1 . The excellent electrochemical performance can be attributed to their hollow nanostructure and excellent structural stability.

Electrochemical performance of Ni/TiO_2 hollow sphere in proton exchange membrane water electrolyzers system

International Nuclear Information System (INIS)

Chattopadhyay, Jayeeta; Srivastava, Rohit; Srivastava, Prem Kumar

2013-01-01

This work presents the electrocatalytic evaluation of Ni/TiO_2 hollow sphere materials in PEM water electrolysis cell. All the electrocatalysts have shown remarkably enhanced electrocatalytic properties in comparison with their performance in aqueous electrolysis cell. According to cyclic voltammetric results, 0.36 A cm"−"2 peak current density has been exhibited in hydrogen evolution reaction (HER) from 30 wt% Ni/TiO_2 electrocatalyst. 15 wt% Ni-doped titania sample has shown the best result in oxygen evolution reaction (OER) with the anodic peak current density of 0.3 A cm"−"2. In the anodic polarization curves, the performance of 15 wt% Ni/TiO_2 hollow sphere electrocatalyst was evaluated up to 140 mA cm"−"2 at comparatively lower over-potential value. 20 wt% Ni/TiO_2 hollow sphere electrocatalyst has also shown electrochemical stability in PEM water electrolyzer for 48 h long analysis. The comparative electrocatalytic behavior of hollow spherical materials with non-sphericals is also presented, which clearly shows the influence of hollow spherical structure in greater electrocatalytic activity of the materials. The physical characterization of all the hollow spherical materials is presented in this work, which has confirmed their better electrochemical behavior in PEM water electrolyzer

Hierarchical FeTiO3-TiO2 hollow spheres for efficient simulated sunlight-driven water oxidation.

Science.gov (United States)

Han, Taoran; Chen, Yajie; Tian, Guohui; Wang, Jian-Qiang; Ren, Zhiyu; Zhou, Wei; Fu, Honggang

2015-10-14

Oxygen generation is the key step for the photocatalytic overall water splitting and considered to be kinetically more challenging than hydrogen generation. Here, an effective water oxidation catalyst of hierarchical FeTiO3-TiO2 hollow spheres are prepared via a two-step sequential solvothermal processes and followed by thermal treatment. The existence of an effective heterointerface and built-in electric field in the surface space charge region in FeTiO3-TiO2 hollow spheres plays a positive role in promoting the separation of photoinduced electron-hole pairs. Surface photovoltage, transient-state photovoltage, fluorescence and electrochemical characterization are used to investigate the transfer process of photoinduced charge carriers. The photogenerated charge carriers in the hierarchical FeTiO3-TiO2 hollow spheres with a proper molar ratio display much higher separation efficiency and longer lifetime than those in the FeTiO3 alone. Moreover, it is suggested that the hierarchical porous hollow structure can contribute to the enhancement of light utilization, surface active sites and material transportation through the framework walls. This specific synergy significantly contributes to the remarkable improvement of the photocatalytic water oxidation activity of the hierarchical FeTiO3-TiO2 hollow spheres under simulated sunlight (AM1.5).

Silicon hollow sphere anode with enhanced cycling stability by a template-free method

Science.gov (United States)

Chen, Song; Chen, Zhuo; Luo, Yunjun; Xia, Min; Cao, Chuanbao

2017-04-01

Silicon is a promising alternative anode material since it has a ten times higher theoretical specific capacity than that of a traditional graphite anode. However, the poor cycling stability due to the huge volume change of Si during charge/discharge processes has seriously hampered its widespread application. To address this challenge, we design a silicon hollow sphere nanostructure by selective etching and a subsequent magnesiothermic reduction. The Si hollow spheres exhibit enhanced electrochemical properties compared to the commercial Si nanoparticles. The initial discharge and charge capacities of the Si hollow sphere anode are 2215.8 mAh g-1 and 1615.1 mAh g-1 with a high initial coulombic efficiency (72%) at a current density of 200 mA g-1, respectively. In particular, the reversible capacity is 1534.5 mAh g-1 with a remarkable 88% capacity retention against the second cycle after 100 cycles, over four times the theoretical capacity of the traditional graphite electrode. Therefore, our work demonstrates the considerable potential of silicon structures for displacing commercial graphite, and might open up new opportunities to rationally design various nanostructured materials for lithium ion batteries.

Self-assembly of calcium phosphate nanoparticles into hollow spheres induced by dissolved amino acids

NARCIS (Netherlands)

Hagmeyer, D.; Ganesan, K.; Ruesing, J.; Schunk, D.; Mayer, C.; Dey, A.; Sommerdijk, N.A.J.M.; Epple, M.

2011-01-01

Nanoparticles of calcium phosphate assemble spontaneously within a few seconds into hollow spheres with a diameter around 200–300 nm in the presence of dissolved amino acids and dipeptides. The process of formation was followed by cryo-transmission electron microscopy (cryoTEM), proving their hollow

Experimental Investigation and Discrete Element Modelling of Composite Hollow Spheres Subjected to Dynamic Fracture

Directory of Open Access Journals (Sweden)

Arthur Coré

2017-01-01

Full Text Available This paper deals with the characterization and the numerical modelling of the collapse of composite hollow spherical structures developed to absorb energy during high velocity impacts. The structure is composed of hollow spheres (ϕ=2–30 mm made of epoxy resin and mineral powder. First of all, quasi-static and dynamic (v=5 mm·min−1 to v=2 m·s−1 compression tests are conducted at room temperature on a single sphere to study energy dissipation mechanisms. Fracture of the material appears to be predominant. A numerical model based on the discrete element method is investigated to simulate the single sphere crushing. The stress-strain-time relationship of the material based on the Ree-Eyring law is numerically implemented. The DEM modelling takes naturally into account the dynamic fracture and the crack path computed is close to the one observed experimentally in uniaxial compression. Eventually, high velocity impacts (v>100 m·s−1 of a hollow sphere on a rigid surface are conducted with an air cannon. The numerical results are in good agreement with the experimental data and demonstrate the ability of the present model to correctly describe the mechanical behavior of brittle materials at high strain rate.

Controllable synthesis of nitrogen-doped hollow mesoporous carbon spheres using ionic liquids as template for supercapacitors

Science.gov (United States)

Chen, Aibing; Li, Yunqian; Liu, Lei; Yu, Yifeng; Xia, Kechan; Wang, Yuying; Li, Shuhui

2017-01-01

We have demonstrated a facile and controllable synthesis of monodispersed nitrogen-doped hollow mesoporous carbon spheres (N-HMCSs) using resorcinol/formaldehyde resin as a carbon precursor, tetraethyl orthosilicate as a structure-assistant agent, ionic liquids (ILs) as soft template, partial carbon sources, and nitrogen sources. The sizes and the architectures including hollow and yolk-shell of resultant carbon spheres can be efficiently controlled through the adjustment of the content of ILs. Alkyl chain length of the ILs also has an important effect on the formation of N-HMCSs. With proper alkyl chain length and content of ILs, the resultant N-HMCSs show monodispersed hollow spheres with high surface areas (up to 1158 m2 g-1), large pore volumes (up to 1.70 cm3 g-1), and uniform mesopore size (5.0 nm). Combining the hollow mesoporous structure, high porosity, large surface area, and nitrogen functionality, the as-synthesized N-HMCSs have good supercapacitor performance with good capacitance (up to 159 F g-1) and favorable capacitance retention (88% capacitive retention after 5000 cycles).

Self-Assembled Hollow Spheres of β-Ni(OH) 2 and Their Derived Nanomaterials

KAUST Repository

Zhang, Shengmao

2009-03-10

This paper describes a novel solution-based chemical process to architect hollow spheres of β-Ni(OH) 2 with controllable sizes in submicrometer and micrometer regimes. In the synthesis, starting nickel salt (nitrate) is first converted to 6-coordinated nickel ion complex [Ni(EDA) 3] 2+ (bidentate ligand EDA = C 2H 4(NH 2) 2) to avoid rapid solid formation. Hollow and core - shell β-Ni(OH) 2 spheres can be obtained with this template-free approach under one-pot conditions. The β-Ni(OH) 2 spheres are constructed from petal-like nanobuilding units which in turn are formed from even smaller nanocrystallites. The obtained porous β-Ni(OH) 2 spheres have a large specific surface area and show a unimodal pore-size distribution. Several preparative parameters have been examined and optimized. In particular, the concentration of divalent nickel in the starting solutions plays an important role in controlling thickness of the petal-like β-Ni(OH) 2 flakes and diameter of spheres. The β-Ni(OH) 2 flakes self-assemble into final spherical products through a donut-like structural intermediate. Furthermore, the β-Ni(OH) 2 hollow spheres can be used as solid precursors to synthesize other nanostructured derivatives. In this work, phase pure inorganic nanostructures, carbon nanotube (CNT) - inorganic nanocomposites, and inorganic - inorganic nanocom-posites (e.g., NiO, Ni, NiO/Ni, Ni/β-Ni(OH) 2, CNTs/NiO, CNTs/Ni, Ni@CNTs, Fe(OH) 3/β-Ni(OH) 2, Co(OH) 2/β-Ni(OH) 2, and Mg(OH) 2/β-Ni(OH) 2) have been prepared via solid-state thermal decomposition, gas-phase reduction, solution-based reduction, surface oxidation, chemical vapor deposition, and liquid-phase deposition. A greater picture for general synthesis of Ni-containing nanomaterials is thus obtained. © 2009 American Chemical Society.

Electrochemical performance of Ni/TiO{sub 2} hollow sphere in proton exchange membrane water electrolyzers system

Energy Technology Data Exchange (ETDEWEB)

Chattopadhyay, Jayeeta; Srivastava, Rohit; Srivastava, Prem Kumar [Birla Institute of Technology, Jharkhand (India)

2013-08-15

This work presents the electrocatalytic evaluation of Ni/TiO{sub 2} hollow sphere materials in PEM water electrolysis cell. All the electrocatalysts have shown remarkably enhanced electrocatalytic properties in comparison with their performance in aqueous electrolysis cell. According to cyclic voltammetric results, 0.36 A cm{sup −2} peak current density has been exhibited in hydrogen evolution reaction (HER) from 30 wt% Ni/TiO{sub 2} electrocatalyst. 15 wt% Ni-doped titania sample has shown the best result in oxygen evolution reaction (OER) with the anodic peak current density of 0.3 A cm{sup −2}. In the anodic polarization curves, the performance of 15 wt% Ni/TiO{sub 2} hollow sphere electrocatalyst was evaluated up to 140 mA cm{sup −2} at comparatively lower over-potential value. 20 wt% Ni/TiO{sub 2} hollow sphere electrocatalyst has also shown electrochemical stability in PEM water electrolyzer for 48 h long analysis. The comparative electrocatalytic behavior of hollow spherical materials with non-sphericals is also presented, which clearly shows the influence of hollow spherical structure in greater electrocatalytic activity of the materials. The physical characterization of all the hollow spherical materials is presented in this work, which has confirmed their better electrochemical behavior in PEM water electrolyzer.

Preparation and electrochemical characteristics of porous hollow spheres of NiO nanosheets as electrodes of supercapacitors

Science.gov (United States)

Yu, Wei; Jiang, Xinbing; Ding, Shujiang; Li, Ben Q.

2014-06-01

Porous hollow nanospheres (or spherical shells) made of NiO nanosheets are synthesized and tested for the electrochemical performance of the electrodes made of these materials for supercapacitors. Preparation of the NiO sheet hollow spheres starts with synthesis of polystyrene nanospheres with carboxyl groups (CPS), followed by a two-step activation procedure and the subsequent nucleation and growth by electroless deposition of Ni on the CPS core to obtain CPS@Ni core-shell nanoparticles. The CPS core is eliminated and metallic Ni nanoshell is converted into NiO by calcinations at high temperatures. The material properties of as-prepared hollow NiO nanospheres are characterized by TEM, XRD and N2-absorption measurements. The electrochemical characteristics of the electrodes made of these nanostructured NiO materials are determined by the CV and galvanostatic measurements. These electrochemical tests indicate that electrodes made of the NiO nanosheet hollow spheres exhibit an improved reversible capacitance of 600 F g-1 after 1000 cycles at a high current density of 10 A g-1. It is believed that the good electrochemical performance of these electrodes is attributed to the improved OH- transport in the porous network structures associated with the hollow spheres of randomly oriented NiO nanosheets.

Hollow SnO2@Co3O4 core-shell spheres encapsulated in three-dimensional graphene foams for high performance supercapacitors and lithium-ion batteries

Science.gov (United States)

Zhao, Bo; Huang, Sheng-Yun; Wang, Tao; Zhang, Kai; Yuen, Matthew M. F.; Xu, Jian-Bin; Fu, Xian-Zhu; Sun, Rong; Wong, Ching-Ping

2015-12-01

Hollow SnO2@Co3O4 spheres are fabricated using 300 nm spherical SiO2 particles as template. Then three-dimensional graphene foams encapsulated hollow SnO2@Co3O4 spheres are successfully obtained through self-assembly in hydrothermal process from graphene oxide nanosheets and metal oxide hollow spheres. The three-dimensional graphene foams encapsulated architectures could greatly improve the capacity, cycling stability and rate capability of hollow SnO2@Co3O4 spheres electrodes due to the highly conductive networks and flexible buffering matrix. The three-dimensional graphene foams encapsulated hollow SnO2@Co3O4 spheres are promising electrode materials for supercapacitors and lithium-ion batteries.

Synthesis and release of trace elements from hollow and porous hydroxyapatite spheres

International Nuclear Information System (INIS)

Xia Wei; Grandfield, Kathryn; Schwenke, Almut; Engqvist, Haakan

2011-01-01

It is known that organic species regulate fabrication of hierarchical biological forms via solution methods. However, in this study, we observed that the presence of inorganic ions plays an important role in the formation and regulation of biological spherical hydroxyapatite formation. We present a mineralization method to prepare ion-doped hydroxyapatite spheres with a hierarchical structure that is free of organic surfactants and biological additives. Porous and hollow strontium-doped hydroxyapatite spheres were synthesized via controlling the concentration of strontium ions in a calcium and phosphate buffer solution. Similarly, fluoride and silicon-doped hydroxyapatite spheres were synthesized. While spherical particle formation was attainable at low and high temperature for Sr-doped hydroxyapatite, it was only possible at high temperature in the F/Si-doped system. The presence of inorganic ions not only plays an important role in the formation and regulation of biological spherical hydroxyapatite, but also could introduce pharmaceutical effects as a result of trace element release. Such ion release results showed a sustained release with pH responsive behavior, and significantly influenced the hydroxyapatite re-precipitation. These ion-doped hydroxyapatite spheres with hollow and porous structure could have promising applications as bone/tooth materials, drug delivery systems, and chromatography supports.

Facile synthesis and enhanced visible-light photocatalytic activity of micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres

Energy Technology Data Exchange (ETDEWEB)

Liu, Jin [School of Resources and Environmental Engineering, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070 (China); The Key Laboratory of Rare Earth Functional Materials and Applications, Zhoukou Normal University, Zhoukou 466001 (China); Zhang, Gaoke, E-mail: gkzhang@whut.edu.cn [School of Resources and Environmental Engineering, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070 (China)

2015-03-15

Graphical abstract: - Highlights: • Micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres were synthesized by a facile method. • The formation mechanism for the Ag{sub 2}ZnGeO{sub 4} hollow spheres was investigated. • The catalyst exhibited an enhanced visible-light photocatalytic activity. • The reactive species in the photocatalytic process were studied. - Abstract: Micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres were successfully synthesized by a one-step and low-temperature route under ambient pressure. The micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres have a diameter of 1–2 μm and their shells are composed of numerous nanoparticles and nanorods. The growth process of the micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres was investigated in detail. The results indicated that the morphologies and composition of Ag{sub 2}ZnGeO{sub 4} samples were strongly dependent on the dose of the AgNO{sub 3} and reaction time. Excessive AgNO{sub 3} was favorable for the nucleation and growth rate of Ag{sub 2}ZnGeO{sub 4} crystals and the formation of pure Ag{sub 2}ZnGeO{sub 4}. Moreover, the formation mechanism of the micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres is related to the Ostwald ripening. Under the same conditions, the photocatalytic activity of micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres is about 1.7 times and 11 times higher than that of bulk Ag{sub 2}ZnGeO{sub 4} and Degussa P25, respectively. These interesting findings could provide new insight on the synthesis of micro/nanostructured ternary-metal oxides with enhanced photocatalytic activity.

Fabrication of hollow-sphere films of wurtzite CuInS{sub 2} on copper substrate

Energy Technology Data Exchange (ETDEWEB)

Lei, Shuijin, E-mail: shjlei@ncu.edu.cn [School of Materials Science and Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Wang, Chunying [School of Materials Science and Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Huang, Qiang [School of Electromechanical Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Liu, Lei; Ge, Yang; Tang, Qingliu; Cheng, Baochang; Xiao, Yanhe; Zhou, Lang [School of Materials Science and Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China)

2013-12-16

As important semiconductors, I–III–VI{sub 2} compounds have attracted wide attention, among which the wurtzite structured CuInS{sub 2} has been the research focus due to its metastable phase. In this paper, the wurtzite CuInS{sub 2} hollow-sphere films have been successfully prepared on copper substrate in a self-designed solvothermal detached system. The films of Cu(OH){sub 2} one-dimensional nanostructure arrays and thioacetamide were used as the precursors and triethylene glycol was used as the solvent. Experiments showed that the amount of indium trichloride played a determinative role in the final morphology of the products. Meanwhile, the one-dimensional nanostructure arrays and the detached solvothermal system have great influences on the crystal shape as well. Based on the experimental results, a possible formation mechanism for the CuInS{sub 2} hollow spheres was also proposed. The UV–Vis absorption spectrum showed a broad absorption over the entire visible light and extending into the near-infrared region and presented the band gap of 1.53 eV for the as-prepared wurtzite CuInS{sub 2}, which indicates the potential applications in solar cells. - Highlights: • A self-designed detached system along with solvothermal treatment was developed. • Wurtzite CuInS{sub 2} hollow-sphere films were successfully fabricated on Cu substrate. • The detached system and InCl{sub 3} usage were crucial for the hollow spheres. • The broadband absorption and 1.53 eV band-gap indicates its potentials in PV.

Human serum albumin mediated self-assembly of gold nanoparticles into hollow spheres

Energy Technology Data Exchange (ETDEWEB)

Nayak, Nimai C [Singapore-MIT Alliance, Manufacturing Systems and Technology Programme, Nanyang Technological University, 65 Nanyang Drive, 637460 (Singapore); Shin, Kwanwoo [Interdisciplinary Program of Integrated Biotechnology, Sogang University, Shinsoo-dong, Mapo-gu, Seoul 121-742 (Korea, Republic of)], E-mail: ncnayak@gmail.com

2008-07-02

The assembly of nanoparticles in topologically predefined superstructures is an important area in nanoscale architecture. In this paper, we report an unusual aggregation phenomenon involving L-lysine capped gold nanoparticles and human serum albumin into hollow nanospheres. The electrostatic interaction between positively charged L-lysine capped gold nanoparticles and negatively charged human serum albumin at physiological pH led to the assembly of the gold nanoparticles into hollow spheres. The phenomenon can be explained by the dry hole opening mechanism.

Human serum albumin mediated self-assembly of gold nanoparticles into hollow spheres

International Nuclear Information System (INIS)

Nayak, Nimai C; Shin, Kwanwoo

2008-01-01

The assembly of nanoparticles in topologically predefined superstructures is an important area in nanoscale architecture. In this paper, we report an unusual aggregation phenomenon involving L-lysine capped gold nanoparticles and human serum albumin into hollow nanospheres. The electrostatic interaction between positively charged L-lysine capped gold nanoparticles and negatively charged human serum albumin at physiological pH led to the assembly of the gold nanoparticles into hollow spheres. The phenomenon can be explained by the dry hole opening mechanism

One-step synthesis of hierarchically porous hybrid TiO2 hollow spheres with high photocatalytic activity

Science.gov (United States)

Liu, Ruiping; Ren, Feng; Yang, Jinlin; Su, Weiming; Sun, Zhiming; Zhang, Lei; Wang, Chang-an

2016-03-01

Hierarchically porous hybrid TiO2 hollow spheres were solvothermally synthesized successfully by using tetrabutyl titanate as titanium precursor and hydrated metal sulfates as soft templates. The as-prepared TiO2 spheres with hierarchically pore structures and high specific surface area and pore volume consisted of highly crystallized anatase TiO2 nanocrystals hybridized with a small amount of metal oxide from the hydrated sulfate. The proposed hydrated-sulfate assisted solvothermal (HAS) synthesis strategy was demonstrated to be widely applicable to various systems. Evaluation of the hybrid TiO2 hollow spheres for the photo-decomposition of methyl orange (MO) under visible-light irradiation revealed that they exhibited excellent photocatalytic activity and durability.

Three-dimensional graphene-polyaniline hybrid hollow spheres by layer-by-layer assembly for application in supercapacitor

International Nuclear Information System (INIS)

Luo, Jing; Ma, Qiang; Gu, Huahao; Zheng, Yuan; Liu, Xiaoya

2015-01-01

Highlights: •A graphene-polyaniline (GR-PANI) hybrid hollow sphere is fabricated by layer-by-layer (LBL) assembly technique. •The GR-PANI hollow sphere has higher specific capacitance than stacked GR-PANI LBL film. •64% of its initial capacitance is maintained with the current density increased from 0.5 to 20 A g −1 . •A high capacity retention rate of 83% after 1000 cycles can be achieved. -- Abstract: A novel kind of three-dimensional graphene-polyaniline hybrid hollow sphere (RGO-PANI HS) has been prepared via layer-by-layer (LBL) assembly of negatively-charged reduced graphene oxide (RGO) and positively charged polyaniline (PANI) on polystyrene (PS) microsphere, followed by the removal of the PS template. The hollow structure of the obtained RGO-PANI HS is confirmed by transmission electron microscopy (TEM). When used as the electrode materials for supercapacitor, the specific capacitance of the RGO-PANI HS reaches 381 F/g at a current density of 4.0 A/g, which is much higher than 251 F/g of the stacked RGO-PANI LBL film. The higher specific capacitance of RGO-PANI HS should be attributed to its unique hollow structure which provides a larger accessible surface area and facilitate the charge and ion transport. In addition, its specific capacitance can be facilely tailored by changing the assembly cycle number. Furthermore, good cycling stability is also demonstrated with 83% of the original capacitance value maintained after 1000 charging/discharging cycles

Self-template synthesis of double shelled ZnS-NiS1.97 hollow spheres for electrochemical energy storage

Science.gov (United States)

Wei, Chengzhen; Ru, Qinglong; Kang, Xiaoting; Hou, Haiyan; Cheng, Cheng; Zhang, Daojun

2018-03-01

In this work, double shelled ZnS-NiS1.97 hollow spheres have been achieved via a simple self-template route, which involves the synthesis of Zn-Ni solid spheres precursors as the self-template and then transformation into double shelled ZnS-NiS1.97 hollow spheres by sulfidation treatment. The as-prepared double shelled ZnS-NiS1.97 hollow spheres possess a high surface area (105.26 m2 g-1) and porous structures. Benefiting from the combined characteristics of novel structures, multi-component, high surface area and porous. When applied as electrode materials for supercapacitors, the double shelled ZnS-NiS1.97hollow spheres deliver a large specific capacitance of 696.8C g-1 at 5.0 A g-1 and a remarkable long lifespan cycling stability (less 5.5% loss after 6000 cycles). Moreover, an asymmetric supercapacitor (ASC) was assembled by utilizing ZnS-NiS1.97 (positive electrode) and activated carbon (negative electrode) as electrode materials. The as-assembled device possesses an energy density of 36 W h kg-1, which can be yet retained 25.6 W h kg-1 even at a power density of 2173.8 W Kg-1, indicating its promising applications in electrochemical energy storage. More importantly, the self-template route is a simple and versatile strategy for the preparation of metal sulfides electrode materials with desired structures, chemical compositions and electrochemical performances.

Lithium-ion storage capacitors achieved by CVD graphene/TaC/Ta-wires and carbon hollow spheres

International Nuclear Information System (INIS)

Zhao, Liwei; Li, Hongji; Li, Mingji; Xu, Sheng; Li, Cuiping; Qu, Changqing; Zhang, Lijun; Yang, Baohe

2016-01-01

Highlights: • Graphene/TaC/Ta wire electrode was prepared by CVD. • Carbon hollow spheres as a solid electrolyte were prepared by hydrothermal. • Specific capacitance of assembled capacitor reached 593 F g −1 at 10 A g −1 . • The capacitor provided high energy and power densities (132 W h kg −1 /3.17 kW kg −1 ). • The hybrid capacitor also exhibited a high stability during long endurance tests. - Abstract: Lithium-ion storage capacitors were assembled using graphene/tantalum carbide/tantalum wire electrodes and carbon hollow spheres as electrolyte. The graphene/tantalum carbide layers were prepared by electron-assisted hot filament chemical vapor deposition; the carbon hollow spheres were synthesized by hydrothermal reaction and pyrolysis treatment. The specific capacitance of the capacitor was 593 F g −1 at a current density of 10 A g −1 . The capacitor showed excellent cycling stability, retaining 91.2% of its initial capacitance after 8000 cycles. Moreover, the capacitor provided a high specific energy density of 132 W h kg −1 at a high power density of 3.17 kW kg −1 . The high energy density is attributed to the widened operation window ranging from 0 to 3.0 V. The graphene layer of the electrode and carbon hollow spheres in electrolyte synergistic affect influence on the electrochemical performance of the capacitor are discussed. In addition, the use of a low-cost lithium salt, lithium chloride, is also featured in this paper.

Graphene-Wrapped Ni(OH)2 Hollow Spheres as Novel Electrode Material for Supercapacitors.

Science.gov (United States)

Sun, Jinfeng; Wang, Jinqing; Li, Zhangpeng; Ou, Junfei; Niu, Lengyuan; Wang, Honggang; Yang, Shengrong

2015-09-01

Graphene-wrapped Ni(OH)2 hollow spheres were prepared via electrostatic interaction between poly(diallyldimethylammonium chloride) (PDDA) modified Ni(OH)2 and graphene oxide (GO) in an aqueous dispersion, followed by the reduction of GO. Morphological and structural analysis by field-emission scanning electron microscopy, X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and thermogravimetric analysis confirmed the successful coating of graphene on Ni(OH)2 hollow spheres with a content of 3.8 wt%. And then its application as electrode material for supercapacitor has been investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. Results show that the sample displays a high capacitance of 1368 F g(-1) at a current density of 1 A g(-1), much better than that of pure Ni(OH)2, illustrating that such composite is a promising candidate as electrode material for supercapacitors.

Synthesis of carbon-coated Na2MnPO4F hollow spheres as a potential cathode material for Na-ion batteries

Science.gov (United States)

Wu, Ling; Hu, Yong; Zhang, Xiaoping; Liu, Jiequn; Zhu, Xing; Zhong, Shengkui

2018-01-01

Hollow sphere structure Na2MnPO4F/C composite is synthesized through spray drying, following in-situ pyrolytic carbon coating process. XRD results indicate that the well crystallized composite can be successfully synthesized, and no other impurity phases are detected. SEM and TEM results reveal that the Na2MnPO4F/C samples show intact hollow spherical architecture, and the hollow spherical shells with an average thickness of 150 nm-250 nm are composed of nanosized primary particles. Furthermore, the amorphous carbon layer is uniformly coated on the surface of the hollow sphere, and the nanosized Na2MnPO4F particles are well embedded in the carbon networks. Consequently, the hollow sphere structure Na2MnPO4F/C shows enhanced electrochemical performance. Especially, it is the first time that the obvious potential platforms (∼3.6 V) are observed during the charge and discharge process at room temperature.

Electrochemical characteristics of discrete, uniform, and monodispersed hollow mesoporous carbon spheres in double-layered supercapacitors.

Science.gov (United States)

Chen, Xuecheng; Kierzek, Krzysztof; Wenelska, Karolina; Cendrowski, Krzystof; Gong, Jiang; Wen, Xin; Tang, Tao; Chu, Paul K; Mijowska, Ewa

2013-11-01

Core-shell-structured mesoporous silica spheres were prepared by using n-octadecyltrimethoxysilane (C18TMS) as the surfactant. Hollow mesoporous carbon spheres with controllable diameters were fabricated from core-shell-structured mesoporous silica sphere templates by chemical vapor deposition (CVD). By controlling the thickness of the silica shell, hollow carbon spheres (HCSs) with different diameters can be obtained. The use of ethylene as the carbon precursor in the CVD process produces the materials in a single step without the need to remove the surfactant. The mechanism of formation and the role played by the surfactant, C18TMS, are investigated. The materials have large potential in double-layer supercapacitors, and their electrochemical properties were determined. HCSs with thicker mesoporous shells possess a larger surface area, which in turn increases their electrochemical capacitance. The samples prepared at a lower temperature also exhibit increased capacitance as a result of the Brunauer-Emmett-Teller (BET) area and larger pore size. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Jingle-bell-shaped ferrite hollow sphere with a noble metal core: Simple synthesis and their magnetic and antibacterial properties

International Nuclear Information System (INIS)

Li Siheng; Wang Enbo; Tian Chungui; Mao Baodong; Kang Zhenhui; Li Qiuyu; Sun Guoying

2008-01-01

In this paper, a simple strategy is developed for rational fabrication of a class of jingle-bell-shaped hollow structured nanomaterials marked as Ag(MFe 2 O 4 ) (M=Ni, Co, Mg, Zn), consisting of ferrite hollow shells and metal nanoparticle cores, using highly uniform colloidal Ag(C) microspheres as template. The final composites were obtained by direct adsorption of metal cations Fe 3+ and M 2+ on the surface of the Ag(C) spheres followed by calcination process to remove the middle carbon shell and transform the metal ions into pure phase ferrites. The as-prepared composites were characterized by X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray analysis (EDX), X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-vis spectroscopy and SQUID magnetometer. The results showed that the composites possess the magnetic property of the ferrite shell and the optical together with antibacterial property of the Ag core. - Graphical abstract: MFe 2 O 4 (M=Ni, Co, Mg, Zn) hollow spheres with a noble metal nanoparticle core were successfully prepared by using colloidal metal(C) core-shell spheres as templates with no need of surface modification. The shell thickness and magnetic properties of the ferrite hollow spheres could be controlled by varying the synthetic parameters

Design and Synthesis of Hierarchical SiO2@C/TiO2 Hollow Spheres for High-Performance Supercapacitors.

Science.gov (United States)

Zhang, Ying; Zhao, Yan; Cao, Shunsheng; Yin, Zhengliang; Cheng, Li; Wu, Limin

2017-09-06

TiO 2 has been widely investigated as an electrode material because of its long cycle life and good durability, but the relatively low theoretical capacity restricts its practical application. Herein, we design and synthesize novel hierarchical SiO 2 @C/TiO 2 (HSCT) hollow spheres via a template-directed method. These unique HSCT hollow spheres combine advantages from both TiO 2 such as cycle stability and SiO 2 with a high accessible area and ionic transport. In particular, the existence of a C layer is able to enhance the electrical conductivity. The SiO 2 layer with a porous structure can increase the ion diffusion channels and accelerate the ion transfer from the outer to the inner layers. The electrochemical measurements demonstrate that the HSCT-hollow-sphere-based electrode manifests a high specific capacitance of 1018 F g -1 at 1 A g -1 which is higher than those for hollow TiO 2 (113 F g -1 ) and SiO 2 /TiO 2 (252 F g -1 ) electrodes, and substantially higher than those of all the previously reported TiO 2 -based electrodes.

JOINT-INDUSTRY PARTNERSHIP TO DEVELOP A HOLLOW SPHERE DUAL-GRADIENT DRILLING SYSTEM

Energy Technology Data Exchange (ETDEWEB)

William C. Maurer; Colin Ruan; Greg Deskins

2003-05-01

Maurer Technology Inc. (MTI) formed a joint-industry partnership to fund the development of a hollow sphere dual-gradient drilling (DGD) system. Phase I consisted of collecting, compiling, analyzing, and distributing information and data regarding a new DGD system for use by the oil and gas industry. Near the end of Phase I, DOE provided funding to the project that was used to conduct a series of critical follow-on tests investigating sphere separation in weighted waterbase and oilbase muds. Drilling costs in deep water are high because seawater pressure on the ocean floor creates a situation where many strings of casing are required due to the relatively close spacing between fracture and pore pressure curves. Approximately $100 million have been spent during the past five years on DGD systems that place pumps on the seafloor to reduce these drilling problems by reducing the annulus fluid pressure at the bottom of the riser. BP estimates that a DGD system can save $9 million per well in the Thunderhorse Field and Conoco estimates it can save $5 to $15 million per well in its deepwater operations. Unfortunately, previous DGD development projects have been unsuccessful due to the high costs ($20 to $50 million) and reliability problems with seafloor pump systems. MTI has been developing a simple DGD system concept that would pump hollow glass spheres into the bottom of the riser to reduce density of the mud in the riser. This eliminates the requirement for seafloor pumps and replaces them with low cost mud pumps, shale shakers, and other oilfield equipment that can be operated on the rig by conventional crews. A $1.8 million Phase I joint-industry project funded by five service companies and three operators showed that hollow spheres could be pumped well, but difficulties were encountered in separating the spheres from a polymer mud supplied by Halliburton due to the high viscosity of this mud at the low shear rates encountered on oilfield shale shaker screens. As a

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

International Nuclear Information System (INIS)

Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

2015-01-01

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

Designed fabrication of fluorine-doped carbon coated mesoporous TiO2 hollow spheres for improved lithium storage

International Nuclear Information System (INIS)

Geng, Hongbo; Ming, Hai; Ge, Danhua; Zheng, Junwei; Gu, Hongwei

2015-01-01

Graphical abstract: Hollow TiO 2 with mesoporous shell (MHTO) was successfully fabricated by a novel and controllable route, followed by fluorine-doped carbon coating the MHTO (MHTO-C/F), with the aim of enhancing the conductivity and stability of structures. - Highlights: • Anatase TiO 2 hollow spheres with mesoporous shells (MHTO) was fabricated via a facile and controllable route, to improve the lithium ion mobility as well as the stability of the architecture. • Fluorine-doped carbon derived from polyvinylidene difluoride was further encapsulated onto TiO 2 hollow spheres to improve the conductivity. • The composites could provide excellent electrochemical performance, which was desirable for the application of TiO 2 as an anode material in lithium ion batteries. - Abstract: In this manuscript, we demonstrated a facile route for the controllable design of “Fluorine (F)-doped carbon” (C/F)-treated TiO 2 hollow spheres with mesoporous shells (MHTO-C/F). The fabrication of this distinct mesoporous hollow structures and the C/F coating could effectively improve the electrolyte permeability and architectural stability, as well as electrical conductivity and lithium ion mobility. As anticipated, MHTO-C/F has several remarkable electrochemical properties, such as a high specific reversible capacity of 252 mA h g −1 , outstanding cycling stability of more than 210 mA h g −1 after 100 cycles at 0.5 C, and good rate performance of around 123 mA h g −1 at 5 C (1 C = 168 mA g −1 ). These properties are highly beneficial for lithium storage

Influence of dielectric polarization upon PD transients: Use of hollow dielectric spheres

DEFF Research Database (Denmark)

McAllister, Iain Wilson

1997-01-01

Hollow glass spheres have recently been employed to provide a reproducible source of partial discharges. The influence of the shell permittivity upon the PD transients is examined. It is shown that, relative to the non-shell situation, the magnitude of such transients may be increased or decrease......, depending on the ratio of the shell-to-bulk dielectric permittivities....

Pseudo-bi-enzyme glucose sensor: ZnS hollow spheres and glucose oxidase concerted catalysis glucose.

Science.gov (United States)

Shuai, Ying; Liu, Changhua; Wang, Jia; Cui, Xiaoyan; Nie, Ling

2013-06-07

This work creatively uses peroxidase-like ZnS hollow spheres (ZnS HSs) to cooperate with glucose oxidase (GOx) for glucose determinations. This approach is that the ZnS HSs electrocatalytically oxidate the enzymatically generated H2O2 to O2, and then the O2 circularly participates in the previous glucose oxidation by glucose oxidase. Au nanoparticles (AuNPs) and carbon nanotubes (CNTs) are used as electron transfer and enzyme immobilization matrices, respectively. The biosensor of glucose oxidase-carbon nanotubes-Au nanoparticles-ZnS hollow spheres-gold electrode (GOx-CNT-AuNPs-ZnS HSs-GE) exhibits a rapid response, a low detection limit (10 μM), a wide linear range (20 μM to 7 mM) as well as good anti-interference, long-term longevity and reproducibility.

High capacity and high rate capability of nitrogen-doped porous hollow carbon spheres for capacitive deionization

International Nuclear Information System (INIS)

Zhao, Shanshan; Yan, Tingting; Wang, Hui; Chen, Guorong; Huang, Lei; Zhang, Jianping; Shi, Liyi; Zhang, Dengsong

2016-01-01

Graphical abstract: - Highlights: • The nitrogen-doped porous hollow carbon spheres were prepared. • The obtained materials have a good capacitive deionization performance. • The electrodes show high salt adsorption rate and good regeneration performance. - Abstract: In this work, nitrogen-doped porous hollow carbon spheres (N-PHCS) were well prepared by using polystyrene (PS) spheres as hard templates and dopamine hydrochloride as carbon and nitrogen sources. Field emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images demonstrate that the N-PHCS have a uniform, spherical and hollow structure. Nitrogen adsorption–desorption analysis shows that the N-PHCS have a high specific area of 512 m 2 /g. X-ray photoelectron spectroscopy result reveals that the nitrogen doping amount is 2.92%. The hollow and porous structure and effective nitrogen doping can contribute to large accessible surface area, efficient ion transport and good conductivity. In the electrochemical tests, we can conclude that the N-PHCS have a high specific capacitance value, a good stability and low inner resistance. The N-PHCS electrodes present a high salt adsorption capacity of 12.95 mg/g at a cell voltage of 1.4 V with a flow rate of 40 mL/min in a 500 mg/L NaCl aqueous solution. Moreover, the N-PHCS electrodes show high salt adsorption rate and good regeneration performance in the CDI process. With high surface specific area and effective nitrogen doping, the N-PHCS is promising to the CDI and other electrochemical applications.

High capacity and high rate capability of nitrogen-doped porous hollow carbon spheres for capacitive deionization

Energy Technology Data Exchange (ETDEWEB)

Zhao, Shanshan; Yan, Tingting; Wang, Hui; Chen, Guorong; Huang, Lei; Zhang, Jianping; Shi, Liyi; Zhang, Dengsong, E-mail: dszhang@shu.edu.cn

2016-04-30

Graphical abstract: - Highlights: • The nitrogen-doped porous hollow carbon spheres were prepared. • The obtained materials have a good capacitive deionization performance. • The electrodes show high salt adsorption rate and good regeneration performance. - Abstract: In this work, nitrogen-doped porous hollow carbon spheres (N-PHCS) were well prepared by using polystyrene (PS) spheres as hard templates and dopamine hydrochloride as carbon and nitrogen sources. Field emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images demonstrate that the N-PHCS have a uniform, spherical and hollow structure. Nitrogen adsorption–desorption analysis shows that the N-PHCS have a high specific area of 512 m{sup 2}/g. X-ray photoelectron spectroscopy result reveals that the nitrogen doping amount is 2.92%. The hollow and porous structure and effective nitrogen doping can contribute to large accessible surface area, efficient ion transport and good conductivity. In the electrochemical tests, we can conclude that the N-PHCS have a high specific capacitance value, a good stability and low inner resistance. The N-PHCS electrodes present a high salt adsorption capacity of 12.95 mg/g at a cell voltage of 1.4 V with a flow rate of 40 mL/min in a 500 mg/L NaCl aqueous solution. Moreover, the N-PHCS electrodes show high salt adsorption rate and good regeneration performance in the CDI process. With high surface specific area and effective nitrogen doping, the N-PHCS is promising to the CDI and other electrochemical applications.

Broadband micro-Michelson interferometer with multi-optical-path beating using a sphered-end hollow fiber.

Science.gov (United States)

Chen, Nan-Kuang; Lu, Kuan-Yi; Shy, Jow-Tsong; Lin, Chinlon

2011-06-01

We demonstrate a high-sensitivity broadband (1250-1650 nm) fiber micro-Michelson interferometer using a single-mode fiber end-spliced with a sphered-end hollow-core fiber. The hollow core is slightly smaller than the solid core of a single-mode fiber, so the fractional power of the core mode is converted into cladding modes. The excited cladding modes propagate at distinct optical paths along the hollow-core fiber and have individual foci outside the spherical lens. The reflected core mode, generated at the solid core-air interface, and the reflected cladding modes, generated at external material, interfere with each other to produce beating in the interference signals. © 2011 Optical Society of America

Micelles driven magnetite (Fe{sub 3}O{sub 4}) hollow spheres and a study on AC magnetic properties for hyperthermia application

Energy Technology Data Exchange (ETDEWEB)

Goswami, Madhuri Mandal, E-mail: madhuri@bose.res.in [Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106 (India); Dey, Chaitali [Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106 (India); CRNN, University of Calcutta, Block JD, Sector III, Salt Lake, Kolkata 700106 (India); Bandyopadhyay, Ayan [CRNN, University of Calcutta, Block JD, Sector III, Salt Lake, Kolkata 700106 (India); Sarkar, Debasish [Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106 (India); Ahir, Manisha [CRNN, University of Calcutta, Block JD, Sector III, Salt Lake, Kolkata 700106 (India)

2016-11-01

Here we have discussed about designing the magnetic particles for hyperthermia therapy and done some studies in this direction. We have used oleylamine micelles as template to synthesize hollow–nanospheres (HNS) of magnetite by solvo-thermal technique. We have shown that oleylamine plays an important role to generate hollow particles. Structural analysis was done by XRD measurement and morphological measurements like SEM and TEM was performed to confirm the shape and size of hollow sphere particles. The detail magnetic measurements give an idea about the application of these HNS for magnetic heating in hyperthermia therapy. In vitro cytotoxicity studies reveal that tolerable dose rate for these particles can be significantly high and particles are non-toxic in nature. Being hollow in structure and magnetic in nature such materials will also be useful in other application fields like in drug delivery, drug release, arsenic and heavy metal removal by adsorption technique, magnetic separation etc. - Graphical abstract: Oleylamine micelles driven easy synthesis of hollow nanosphere (HNS) magnetite for hyperthermia therapy. - Highlights: • We have reported a new method of synthesis of hollow spheres of magnetite using micelles as model core and removal of micelles evolve the hollow like structure by relocating the core particles to the edge one. • Size can be controlled by varying the micellar concentration. • The detail magnetic measurements give an idea of applicability of these nano hollow spheres (NHS) in hyperthermia therapy. • Cyto-toxicity study reveals that these particles are highly biofriendly and dose rate can be increased upto a significant amount.

Hollow carbon sphere/metal oxide nanocomposites anodes for lithium-ion batteries

International Nuclear Information System (INIS)

Wenelska, K.; Ottmann, A.; Schneider, P.; Thauer, E.; Klingeler, R.; Mijowska, E.

2016-01-01

HCS (Hollow carbon spheres) covered with metal oxide nanoparticles (SnO_2 and MnO_2, respectively) were successfully synthesized and investigated regarding their potential as anode materials for lithium-ion batteries. Raman spectroscopy shows a high degree of graphitization for the HCS host structure. The mesoporous nature of the nanocomposites is confirmed by Brunauer–Emmett–Teller analysis. For both metal oxides under study, the metal oxide functionalization of HCS yields a significant increase of electrochemical performance. The charge capacity of HCS/SnO_2 is 370 mA hg"−"1 after 45 cycles (266 mA hg"−"1 in HCS/MnO_2) which clearly exceeds the value of 188 mA hg"−"1 in pristine HCS. Remarkably, the data imply excellent long term cycling stability after 100 cycles in both cases. The results hence show that mesoporous HCS/metal oxide nanocomposites enable exploiting the potential of metal oxide anode materials in Lithium-ion batteries by providing a HCS host structure which is both conductive and stable enough to accommodate big volume change effects. - Highlights: • Strategy to synthesize hollow carbon spheres decorated by metal oxides nanoparticles. • High-performance of HCS/MOx storage as mesoporous hybrid material. • The results hence demonstrate high electrochemical activity of the HCS/MOx.

Bubble template synthesis of Sn2Nb2O7 hollow spheres for enhanced visible-light-driven photocatalytic hydrogen production.

Science.gov (United States)

Zhou, Chao; Zhao, Yufei; Bian, Tong; Shang, Lu; Yu, Huijun; Wu, Li-Zhu; Tung, Chen-Ho; Zhang, Tierui

2013-10-28

Hierarchical Sn2Nb2O7 hollow spheres were prepared for the first time via a facile hydrothermal route using bubbles generated in situ from the decomposition of urea as soft templates. The as-obtained hollow spheres with a large specific surface area of 58.3 m(2) g(-1) show improved visible-light-driven photocatalytic H2 production activity in lactic acid aqueous solutions, about 4 times higher than that of the bulk Sn2Nb2O7 sample prepared by a conventional high temperature solid state reaction method.

Synthesis of Hollow Silver Spheres using Spherical Vaterite-type Calcium Carbonate as Template

Energy Technology Data Exchange (ETDEWEB)

Park, Minyoung; Go, Hani; Kim, Jae-Hyun; Rhee, Seog Woo [Kongju National University, Kongju (Korea, Republic of)

2016-03-15

In this work, we describe the synthesis of hollow silver spheres using vaterite-type CaCO{sub 3} as template. The spherical vaterite-type CaCO{sub 3} was selectively precipitated d reaction of aqueous CaCl{sub 2} and Na{sub 2}CO{sub 3} in the presence of the polyelectrolyte poly(4-styrenesulfonate). Aqueous AgNO{sub 3} solution containing NH{sub 2}-functionalized CaCO{sub 3} particles was treated with reducing agents such as ascorbic acid, NaBH{sub 4}, and acetaldehyde, and the reduced silver particles were deposited on the surface of CaCO{sub 3}particles to form uniform silvershells. The CaCO{sub 3} used as template was removed from the CaCO{sub 3}/Ag composite by treatment with acid. Finally, the hollow silver sphere was obtained. The morphologies of product were investigated using electron microscopy, the chemical composition of the composite was analyzed using energy-dispersive X-ray spectroscopy, the vibration modes of the carbonate ion were investigated by Fourier transform infrared spectroscopy, the thermal mass change was measured using the thermogravimetric analysis, and the solid phases were confirmed by powder X-ray diffraction.

Ultrafine Sn nanoparticles embedded in shell of N-doped hollow carbon spheres as high rate anode for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Dou, Peng; Cao, Zhenzhen; Wang, Chao; Zheng, Jiao [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Xu, Xinhua, E-mail: xhxutju@gmail.com [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Composite and Functional Materials, Tianjin 300072 (China)

2017-05-15

Highlights: • Dynamic covalent bond in polymeric nanoparticles is used to induce hollow Sn{sup 4+}-MOPs. • Ultrafine Sn nanoparticles uniformly embedded in shell of N-doped hollow carbon spheres is successfully synthesized by pyrolysis of the Sn{sup 4+}-MOPs precursor. • The composite exhibits superior cycle stability and rate capacity. - Abstract: A novel reversible interaction in polymeric nanoparticles is used to induce hollow Sn{sup 4+}-MOPs. Then ultrafine Sn nanoparticles uniformly embedded in shell of N-doped hollow carbon spheres is successfully synthesized by pyrolysis of the Sn{sup 4+}-MOPs precursor. In this architecture, the N-doped carbon shells can effectively avoid the direct exposure of embedded Sn nanoparticles to the electrolyte and efficiently accommodate the volume change of Sn nanoparticles. Furthermore, the hollow structure of carbon sphere can prevent Sn nanoparticles aggregation over repeated cycling and shorten the diffusion path of both electrons and ions. As a consequence, this N-doped hollow Sn/C anode delivers a reversible capacity of 606 mA h g{sup −1} at a current density of 0.2 A g{sup −1} after 250 cycles and a reversible capacity of 221 mA h g{sup −1} even at a much higher current density of 10 A g{sup −1}, which are much better than those of pure Sn nanoparticles. The desirable cyclic stability and rate capability were attributed to the unique architecture that provided fast pathway for electron transport and simultaneously solved the major issues of Sn-based anodes, such as pulverization, aggregation and loss of electrical contact.

Gamma Radiation Induced Preparation of Functional Conducting Polymer Hollow Spheres

Energy Technology Data Exchange (ETDEWEB)

Lee, K. -P.; Gopalan, A. I.; Philips, M. F.; Jeong, K.M., E-mail: kplee@knu.ac.kr [Department of Chemistry Education, Teacher' s College, Kyungpook National University 1370, Sankyuk-dong, Buk-gu, Daegu 702-701 (Korea, Republic of)

2010-07-01

New materials are sought for applications in many of the emerging fields that include catalysis, sensors, biomedical, optics and electronic application. With the advent of nanotechnology, innovative materials with novel properties are being synthesized towards target applications. Changing the sizes of particles, chemical, optical, and mechanical properties of the materials can often be tailored according to the specific needs of the application. Nanocrystalline, nanoparticles, nanocapsules, nanoporous materials, nanofibers, nanowires, fullerenes, nanotubes, nanosprings, nanobelts, dendrimers and nanospheres, ets, are few of the nanostructured materials. The examples of nanostructured materials include semiconducting nanowire quantum dots for gas sensing and self-assembled flower-like architectures. Self-assembly of nanoparticles can result in specific structures with unique and useful electronic, optical, and magnetic properties. Self or induced assemby of simple nanoparticles and rods could result into complex geometries, such as nanoflowers, binary superlattices, optical grating. Over the past decade, hollow spherical nanomaterials have received considerable attention due to their interesting properties such as low density, high surface area and good permeation. Various methods like solvothermal, self-assembly, sonochemical, solvent evaporation, chemical vapor deposition, microwave-assisted aqueous hydrothermal and electrochemical are being pursued for the production of hollow spherical materials. Polymer capsules and hollow spheres have increasingly received interest because of their large surface area and potential applications in catalysis, controlled delivery, artificial cells, light fillers and photonics.

Gamma Radiation Induced Preparation of Functional Conducting Polymer Hollow Spheres

International Nuclear Information System (INIS)

Lee, K.-P.; Gopalan, A.I.; Philips, M.F.; Jeong, K.M.

2010-01-01

New materials are sought for applications in many of the emerging fields that include catalysis, sensors, biomedical, optics and electronic application. With the advent of nanotechnology, innovative materials with novel properties are being synthesized towards target applications. Changing the sizes of particles, chemical, optical, and mechanical properties of the materials can often be tailored according to the specific needs of the application. Nanocrystalline, nanoparticles, nanocapsules, nanoporous materials, nanofibers, nanowires, fullerenes, nanotubes, nanosprings, nanobelts, dendrimers and nanospheres, ets, are few of the nanostructured materials. The examples of nanostructured materials include semiconducting nanowire quantum dots for gas sensing and self-assembled flower-like architectures. Self-assembly of nanoparticles can result in specific structures with unique and useful electronic, optical, and magnetic properties. Self or induced assemby of simple nanoparticles and rods could result into complex geometries, such as nanoflowers, binary superlattices, optical grating. Over the past decade, hollow spherical nanomaterials have received considerable attention due to their interesting properties such as low density, high surface area and good permeation. Various methods like solvothermal, self-assembly, sonochemical, solvent evaporation, chemical vapor deposition, microwave-assisted aqueous hydrothermal and electrochemical are being pursued for the production of hollow spherical materials. Polymer capsules and hollow spheres have increasingly received interest because of their large surface area and potential applications in catalysis, controlled delivery, artificial cells, light fillers and photonics

Nitrogen and phosphorus co-doped carbon hollow spheres derived from polypyrrole for high-performance supercapacitor electrodes

Science.gov (United States)

Lv, Bingjie; Li, Peipei; Liu, Yan; Lin, Shanshan; Gao, Bifen; Lin, Bizhou

2018-04-01

Nitrogen and phosphorus co-doped carbon hollow spheres (NPCHSs) have been prepared by a carbonization and subsequent chemical activation route using dehydrated polypyrrole hollow spheres as the precursor and KOH as the activating agent. NPCHSs are interconnected into a unique 3D porous network, which endows the as-prepared carbon to exhibit a large specific surface area of 1155 m2 g-1 and a high specific capacitance of 232 F g-1 at a current density of 1 A g-1. The as-obtained NPCHSs present a high-level heteroatom doping with N, O and P contents of 11.4, 6.7 and 3.5 wt%, respectively. The capacitance of NPCHSs has been retained at 89.1% after 5000 charge-discharge cycles at a relatively high current density of 5 A g-1. Such excellent performance suggests that NPCHSs are attractive electrode candidates for electrical double layer capacitors.

Fabrication of polymeric hollow nanospheres, hollow nanocubes and hollow plates

Science.gov (United States)

Cheng, Daming; Xia, Haibing; Chan, Hardy Sze On

2006-03-01

A facile strategy for fabricating polypyrrole-chitosan (PPy-CS) hollow nanostructures with different shapes (sphere, cube and plate) and a wide range of sizes (from 35 to 600 nm) is described. These hollow structures have been fabricated using silver bromide as a single template material for polymer nucleation and growth. PPy-CS hollow nanostructures are formed by reaction with an etching agent to remove the core. These hollow nanostructures have been extensively characterized using various techniques such as TEM, FT-IR, UV-vis, and XRD.

One step process of decomposition and polymerization to fabricate SiO_2 hollow spheres/polyimide composite for foldable OLEDs

International Nuclear Information System (INIS)

Kim, Min Kyu; Kim, Dong Won; Moon, Soo Hyun; Shin, Dong-Wook; Oh, Tae Sik; Yoo, Ji Beom

2017-01-01

Graphical abstract: The SiO_2 hollow spheres and polyimide hybrid synthesized using one step process, simultaneous occurrence of decomposition and polymerization (SODP) is useful with a ultra-low dielectric constant and high thermal stability for flexible OLED. - Highlights: • We fabricated hybrid films of SHS/PI by using a one step process with SODP. • The film has ultralow dielectric constant (50 vol% at k = 1.67). • There is no collapse of SiO_2 hollow spheres in the PI matrix after bending test for 50,000 cycles. - Abstract: The fabrication of interlayer dielectrics (ILDs) in flexible organic light-emitting diodes (OLEDs) requires flexible materials with a low dielectric constant as well as materials with excellent electrical, thermal, and mechanical properties for optimal device performance. Hybrid films of SiO_2 hollow spheres (SHS)/polyimide (PI) were prepared using a one-step process, with simultaneous occurrence of decomposition (polystyrene, PS) and polymerization (PI) (SODP). No collapse of SiO_2 hollow spheres in PI was observed from 10 vol% to 60 vol% SHS in hybrid films. The dielectric constant of hybrid films was reduced from 3.45 to 1.67 and was saturated at above 50 vol% of SHS due to the maximum fill factor of SHS in the PI matrix. The thermal stability was excellent up to 500 °C due to the inherent thermal property of PI. After a bending test for 50,000 cycles at a bending radius of 1 mm, the SHS/PI hybrid films retained their dielectric constant and current density. These results indicate the hybrid film to be the most promising candidate for flexible ILDs with a low dielectric constant and high thermal stability for foldable OLEDs.

Synthesis and characterization of hollow α-Fe2O3 sub-micron spheres prepared by sol–gel

International Nuclear Information System (INIS)

León, Lizbet; Bustamante, Angel; Osorio, Ana; Olarte, G. S.; Santos Valladares, Luis De Los; Barnes, Crispin H. W.; Majima, Yutaka

2011-01-01

In this work we report the preparation of magnetic hematite hollow sub-micron spheres (α-Fe 2 O 3 ) by colloidal suspensions of ferric nitrate nine-hydrate (Fe(NO 3 ) 3 ·9H 2 O) particles in citric acid solution by following the sol–gel method. After the gel formation, the samples were annealed at different temperatures in an oxidizing atmosphere. Annealing at 180°C resulted in an amorphous phase, without iron oxide formation. Annealing at 250°C resulted in coexisting phases of hematite, maghemite and magnetite, whereas at 400°C, only hematite and maghemite were found. Pure hematite hollow sub-micron spheres with porous shells were formed after annealing at 600°C. The characterization was performed by X-ray diffraction (XRD), Mössbauer spectroscopy (MS) and scanning electron microscopy (SEM).

Hollow carbon spheres with encapsulation of Co3O4 nanoparticles as anode material for lithium ion batteries

International Nuclear Information System (INIS)

Zhan Liang; Wang Yanli; Qiao Wenming; Ling, Licheng; Yang Shubin

2012-01-01

Graphical abstract: Hollow carbon spheres with encapsulation of Co 3 O 4 nanoparticles were synthesized. As anode materials for lithium ion battery, the reversible capacity of obtained electrode is as high as 732 mAh g −1 at 74 mA g −1 and 500 mAh g −1 at 744 mA g −1 . - Abstract: Based on the high theoretical capacity of Co 3 O 4 for lithium storage, a noval type of monodisperse hollow carbon spheres with encapsulation of Co 3 O 4 nanoparticles (HCSE-Co 3 O 4 ) were designed and synthesized. The monodisperse hollow carbon spheres not only can provide enough void volume to accommodate the volume change of encapsulated Co 3 O 4 nanoparicles, but also can prevent the formation of solid electrolyte interface (SEI) films on the surface of Co 3 O 4 nanoparticles and following direct contact of Co and SEI films upon lithium extraction. The HCSE-Co 3 O 4 electrode exhibit highly reversible capacity, excellent cycle performance and rate capability attributed to the unique structure. The reversible capacity of HCSE-Co 3 O 4 electrode is as high as 500 mAh g −1 at a current density of 744 mA g −1 , while that of bare Co 3 O 4 electrode is only around 80 mAh g −1 .

High photocatalytic activity of hierarchical SiO2@C-doped TiO2 hollow spheres in UV and visible light towards degradation of rhodamine B.

Science.gov (United States)

Zhang, Ying; Chen, Juanrong; Hua, Li; Li, Songjun; Zhang, Xuanxuan; Sheng, Weichen; Cao, Shunsheng

2017-10-15

Ongoing research activities are targeted to explore high photocatalytic activity of TiO 2 -based photocatalysts for the degradation of environmental contaminants under UV and visible light irradiation. In this work, we devise a facile, cost-effective technique to in situ synthesize hierarchical SiO 2 @C-doped TiO 2 (SCT) hollow spheres for the first time. This strategy mainly contains the preparation of monodisperse cationic polystyrene spheres (CPS), sequential deposition of inner SiO 2 , the preparation of the sandwich-like CPS@SiO 2 @CPS particles, and formation of outer TiO 2 . After the one-step removal of CPS templates by calcination at 450°C, hierarchical SiO 2 @C-doped TiO 2 hollow spheres are in situ prepared. The morphology, hierarchical structure, and properties of SCT photocatalyst were characterized by TEM. SEM, STEM Mapping, BET, XRD, UV-vis spectroscopy, and XPS. Results strongly confirm the carbon doping in the outer TiO 2 lattice of SCT hollow spheres. When the as-synthesized SCT hollow spheres were employed as a photocatalyst for the degradation of Rhodamine B under visible-light and ultraviolet irradiation, the SCT photocatalyst exhibits a higher photocatalytic activity than commercial P25, effectively overcoming the limitations of poorer UV activity for many previous reported TiO 2 -based photocatalysts due to doping. Copyright © 2017 Elsevier B.V. All rights reserved.

One step process of decomposition and polymerization to fabricate SiO{sub 2} hollow spheres/polyimide composite for foldable OLEDs

Energy Technology Data Exchange (ETDEWEB)

Kim, Min Kyu [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Dong Won; Moon, Soo Hyun [School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Dong-Wook [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); College of Engineering, Mathematics and Physical Sciences, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom); Oh, Tae Sik [School of Mechanical and ICT Convergence Engineering, Sunmoon University, Asan 336-708 (Korea, Republic of); Yoo, Ji Beom, E-mail: jbyoo@skku.edu [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2017-03-15

Graphical abstract: The SiO{sub 2} hollow spheres and polyimide hybrid synthesized using one step process, simultaneous occurrence of decomposition and polymerization (SODP) is useful with a ultra-low dielectric constant and high thermal stability for flexible OLED. - Highlights: • We fabricated hybrid films of SHS/PI by using a one step process with SODP. • The film has ultralow dielectric constant (50 vol% at k = 1.67). • There is no collapse of SiO{sub 2} hollow spheres in the PI matrix after bending test for 50,000 cycles. - Abstract: The fabrication of interlayer dielectrics (ILDs) in flexible organic light-emitting diodes (OLEDs) requires flexible materials with a low dielectric constant as well as materials with excellent electrical, thermal, and mechanical properties for optimal device performance. Hybrid films of SiO{sub 2} hollow spheres (SHS)/polyimide (PI) were prepared using a one-step process, with simultaneous occurrence of decomposition (polystyrene, PS) and polymerization (PI) (SODP). No collapse of SiO{sub 2} hollow spheres in PI was observed from 10 vol% to 60 vol% SHS in hybrid films. The dielectric constant of hybrid films was reduced from 3.45 to 1.67 and was saturated at above 50 vol% of SHS due to the maximum fill factor of SHS in the PI matrix. The thermal stability was excellent up to 500 °C due to the inherent thermal property of PI. After a bending test for 50,000 cycles at a bending radius of 1 mm, the SHS/PI hybrid films retained their dielectric constant and current density. These results indicate the hybrid film to be the most promising candidate for flexible ILDs with a low dielectric constant and high thermal stability for foldable OLEDs.

Nitrogen-Doped Hollow Carbon Spheres with Embedded Co Nanoparticles as Active Non-Noble-Metal Electrocatalysts for the Oxygen Reduction Reaction

Directory of Open Access Journals (Sweden)

Ruohao Xing

2018-02-01

Full Text Available Transition metal (Fe, Co, Ni complexes on carbon nanomaterials are promising candidates as electrocatalysts towards the oxygen reduction reaction (ORR. In this paper, nitrogen-doped hollow carbon spheres with embedded Co nanoparticles were successfully prepared via a controllable synthesis strategy. The morphology characterization shows that the hollow carbon spheres possess an average diameter of ~150 nm with a narrow size distribution and a shell thickness of ~14.5 nm. The content of N doping ranges from 2.1 to 6.6 at.% depending on the calcination temperature from 900 to 1050 °C. Compared with commercial Pt/C, the Co-containing nitrogen-doped hollow carbon spheres prepared at 900 °C (CoNHCS-900 as an ORR electrocatalyst shows a half-wave potential shift of only ∆E1/2 = 55 mV, but a superior stability of about 90.2% maintenance after 20,000 s in the O2-saturated 0.1 M KOH at a rotating speed of 1600 rpm. This could be ascribed to the synergistic effects of N-containing moieties, Co-Nx species, and Co nanoparticles, which significantly increase the density of active sites and promote the charge transfer during the ORR process.

Solvothermal Synthesis of a Hollow Micro-Sphere LiFePO4/C Composite with a Porous Interior Structure as a Cathode Material for Lithium Ion Batteries

Science.gov (United States)

Liu, Yang; Zhang, Jieyu; Li, Ying; Hu, Yemin; Li, Wenxian; Zhu, Mingyuan; Hu, Pengfei; Chou, Shulei; Wang, Guoxiu

2017-01-01

To overcome the low lithium ion diffusion and slow electron transfer, a hollow micro sphere LiFePO4/C cathode material with a porous interior structure was synthesized via a solvothermal method by using ethylene glycol (EG) as the solvent medium and cetyltrimethylammonium bromide (CTAB) as the surfactant. In this strategy, the EG solvent inhibits the growth of the crystals and the CTAB surfactant boots the self-assembly of the primary nanoparticles to form hollow spheres. The resultant carbon-coat LiFePO4/C hollow micro-spheres have a ~300 nm thick shell/wall consisting of aggregated nanoparticles and a porous interior. When used as materials for lithium-ion batteries, the hollow micro spherical LiFePO4/C composite exhibits superior discharge capacity (163 mAh g−1 at 0.1 C), good high-rate discharge capacity (118 mAh g−1 at 10 C), and fine cycling stability (99.2% after 200 cycles at 0.1 C). The good electrochemical performances are attributed to a high rate of ionic/electronic conduction and the high structural stability arising from the nanosized primary particles and the micro-sized hollow spherical structure. PMID:29099814

Solvothermal Synthesis of a Hollow Micro-Sphere LiFePO4/C Composite with a Porous Interior Structure as a Cathode Material for Lithium Ion Batteries

Directory of Open Access Journals (Sweden)

Yang Liu

2017-11-01

Full Text Available To overcome the low lithium ion diffusion and slow electron transfer, a hollow micro sphere LiFePO4/C cathode material with a porous interior structure was synthesized via a solvothermal method by using ethylene glycol (EG as the solvent medium and cetyltrimethylammonium bromide (CTAB as the surfactant. In this strategy, the EG solvent inhibits the growth of the crystals and the CTAB surfactant boots the self-assembly of the primary nanoparticles to form hollow spheres. The resultant carbon-coat LiFePO4/C hollow micro-spheres have a ~300 nm thick shell/wall consisting of aggregated nanoparticles and a porous interior. When used as materials for lithium-ion batteries, the hollow micro spherical LiFePO4/C composite exhibits superior discharge capacity (163 mAh g−1 at 0.1 C, good high-rate discharge capacity (118 mAh g−1 at 10 C, and fine cycling stability (99.2% after 200 cycles at 0.1 C. The good electrochemical performances are attributed to a high rate of ionic/electronic conduction and the high structural stability arising from the nanosized primary particles and the micro-sized hollow spherical structure.

Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

International Nuclear Information System (INIS)

Alevli, Mustafa; Haider, Ali; Kizir, Seda; Leghari, Shahid A.; Biyikli, Necmi

2016-01-01

GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor

Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Alevli, Mustafa, E-mail: mustafaalevli@marmara.edu.tr [Department of Physics, Marmara University, Göztepe Kadıköy, 34722 İstanbul (Turkey); Haider, Ali; Kizir, Seda; Leghari, Shahid A.; Biyikli, Necmi, E-mail: biyikli@unam.bilkent.edu.tr [Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, 06800 Ankara, Turkey and National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, 06800 Ankara (Turkey)

2016-01-15

GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor.

Hierarchical hollow spheres of Fe2O3 @polyaniline for lithium ion battery anodes.

Science.gov (United States)

Jeong, Jae-Min; Choi, Bong Gill; Lee, Soon Chang; Lee, Kyoung G; Chang, Sung-Jin; Han, Young-Kyu; Lee, Young Boo; Lee, Hyun Uk; Kwon, Soonjo; Lee, Gaehang; Lee, Chang-Soo; Huh, Yun Suk

2013-11-20

Hierarchical hollow spheres of Fe2 O3 @polyaniline are fabricated by template-free synthesis of iron oxides followed by a post in- and exterior construction. A combination of large surface area with porous structure, fast ion/electron transport, and mechanical integrity renders this material attractive as a lithium-ion anode, showing superior rate capability and cycling performance. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis of hydroxyapatite nanoparticles by a novel ultrasonic assisted with mixed hollow sphere template method

Science.gov (United States)

Gopi, D.; Indira, J.; Kavitha, L.; Sekar, M.; Mudali, U. Kamachi

Hydroxyapatite (HAP) is the main inorganic component of bone material and is widely used in various biomedical applications due to its excellent bioactivity and biocompatibility. In this paper, we have reported the synthesis of hydroxyapatite nanoparticles by a novel ultrasonic assisted mixed template directed method. In this method glycine-acrylic acid (GLY-AA) hollow spheres were used as an organic template which could be prepared by mixing of glycine with acrylic acid. The as-synthesized HAP nanoparticles were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscope (SEM) and tunnelling electron microscope (TEM) to investigate the nature of bonding, crystallinity, size and shape. The thermal stability of as-synthesized nanoparticles was also investigated by the thermo gravimetric analysis (TGA). The effect of ultrasonic irradiation time on the crystallinity and size of the HAP nanoparticles in presence of glycine-acrylic acid hollow spheres template were investigated. From the inspection of the above results it is confirmed that the crystallinity and size of the HAP nanoparticles decrease with increasing ultrasonic irradiation time. Hence the proposed synthesis strategy provides a facile pathway to obtain nano sized HAP with high quality, suitable size and morphology.

Improvement of catalytic activity in selective oxidation of styrene with H{sub 2}O{sub 2} over spinel Mg–Cu ferrite hollow spheres in water

Energy Technology Data Exchange (ETDEWEB)

Tong, Jinhui, E-mail: jinhuitong@126.com [Key Laboratory of Eco-Environment-Related Polymer Materials, Ministry of Education, Lanzhou 730070 (China); Key Laboratory of Gansu Polymer Materials, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China); Cai, Xiaodong; Wang, Haiyan; Zhang, Qianping [Key Laboratory of Eco-Environment-Related Polymer Materials, Ministry of Education, Lanzhou 730070 (China); Key Laboratory of Gansu Polymer Materials, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China)

2014-07-01

Graphical abstract: Uniform spinel Mg–Cu ferrite hollow spheres were prepared using carbon spheres as templates. Solid spinel Mg{sub 0.5}Cu{sub 0.5}Fe{sub 2}O{sub 4} ferrite nanocrystals were also prepared by sol–gel auto-combustion, hydrothermal and coprecipitation methods for comparison. The samples were found to be efficient catalysts for oxidation of styrene using hydrogen peroxide as oxidant. Especially, in the case of Mg{sub 0.5}Cu{sub 0.5}Fe{sub 2}O{sub 4} hollow spheres, obvious improvement on catalytic activity was observed and 21.2% of styrene conversion and 75.2% of selectivity for benzaldehyde were obtained at 80 °C for 6 h reaction in water. The catalyst can be magnetically separated easily for reuse and no obvious loss of activity was observed when reused in six consecutive runs. - Highlights: • Uniform spinel ferrite hollow spheres were prepared by a simple method. • The catalyst has been proved much more efficient for styrene oxidation than the reported analogues. • The catalyst can be easily separated by external magnetic field and has exhibited excellent reusability. • The catalytic system is environmentally friendly. - Abstract: Uniform spinel Mg–Cu ferrite hollow spheres were prepared using carbon spheres as templates. For comparison, solid Mg–Cu ferrite nanocrystals were also prepared by sol–gel auto-combustion, hydrothermal and coprecipitation methods. All the samples were characterized by Fourier transform infrared spectrophotometry (FT-IR), X-ray diffractometry (XRD), transmission electron microscopy (TEM) and N{sub 2} physisorption. The samples were found to be efficient catalysts for oxidation of styrene using hydrogen peroxide as oxidant. Especially, in the case of Mg{sub 0.5}Cu{sub 0.5}Fe{sub 2}O{sub 4} hollow spheres, obvious improvement on catalytic activity was observed, and 21.2% of styrene conversion and 75.2% of selectivity for benzaldehyde were obtained at 80 °C for 6 h reaction in water. The catalyst can be

Biomolecule-assisted synthesis of defect-mediated Cd1-xZnxS/MoS2/graphene hollow spheres for highly efficient hydrogen evolution.

Science.gov (United States)

Du, Ruifeng; Zhang, Yihe; Li, Baoying; Yu, Xuelian; Liu, Huijuan; An, Xiaoqiang; Qu, Jiuhui

2016-06-28

Moderate efficiency and the utilization of noble metal cocatalysts are the key factors that restrict the large-scale application of photocatalytic hydrogen production. To develop more efficient photocatalysts based on earth abundant elements, either a new material strategy or a fundamental understanding of the semiconductor/cocatalyst interfaces is highly desirable. In this paper, we studied the feasibility of in situ formation of defect-rich cocatalysts on graphene-based photocatalysts. A facile biomolecule-assisted strategy was used to self-assmble Cd1-xZnxS/MoS2/graphene hollow spheres. The defect-mediated cocatalyst and synergetic charge transfer around heterostructured interfaces exhibit a significant impact on the visible-light-driven photocatalytic activity of multicomponent solid solutions. With engineered interfacial defects, Cd0.8Zn0.2S/MoS2/graphene hollow spheres exhibited a 63-fold improved H2 production rate, which was even 2 and 3.8 times higher than those of CdS/MoS2/graphene hollow spheres and Cd0.8Zn0.2S/Pt. Therefore, our research provides a promising approach for the rational design of high-efficiency and low-cost photocatalysts for solar fuel production.

Effect of Hollow Sphere Size and Distribution on the Quasi-Static and High Strain Rate Compressive Properties of Al-A380-Al2O3 Syntactic Foams

Science.gov (United States)

2012-01-01

heat exchangers, flotation devices, energy absorbers and as decorative building materials. A class of foam material, where the voids are contained...hollow spheres are presented in Table 1 (information provided by suppliers). The hollow spheres were supplied by C-E Minerals in standard size...through TACOM R&D Contract# W56HZV-08-C-0716. The authors would also like to acknowledge and thank C-E Minerals for providing the ALODUR alumina

Synthesis of hydroxyapatite nanoparticles by a novel ultrasonic assisted with mixed hollow sphere template method.

Science.gov (United States)

Gopi, D; Indira, J; Kavitha, L; Sekar, M; Mudali, U Kamachi

2012-07-01

Hydroxyapatite (HAP) is the main inorganic component of bone material and is widely used in various biomedical applications due to its excellent bioactivity and biocompatibility. In this paper, we have reported the synthesis of hydroxyapatite nanoparticles by a novel ultrasonic assisted mixed template directed method. In this method glycine-acrylic acid (GLY-AA) hollow spheres were used as an organic template which could be prepared by mixing of glycine with acrylic acid. The as-synthesized HAP nanoparticles were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscope (SEM) and tunnelling electron microscope (TEM) to investigate the nature of bonding, crystallinity, size and shape. The thermal stability of as-synthesized nanoparticles was also investigated by the thermo gravimetric analysis (TGA). The effect of ultrasonic irradiation time on the crystallinity and size of the HAP nanoparticles in presence of glycine-acrylic acid hollow spheres template were investigated. From the inspection of the above results it is confirmed that the crystallinity and size of the HAP nanoparticles decrease with increasing ultrasonic irradiation time. Hence the proposed synthesis strategy provides a facile pathway to obtain nano sized HAP with high quality, suitable size and morphology. Copyright © 2012 Elsevier B.V. All rights reserved.

Synthesis and characterization of hollow {alpha}-Fe{sub 2}O{sub 3} sub-micron spheres prepared by sol-gel

Energy Technology Data Exchange (ETDEWEB)

Leon, Lizbet, E-mail: lizbetlf@gmail.com; Bustamante, Angel; Osorio, Ana; Olarte, G. S. [Universidad Nacional Mayor de San Marcos (Peru); Santos Valladares, Luis De Los, E-mail: ld301@cam.ac.uk; Barnes, Crispin H. W. [University of Cambridge, Cavendish Laboratory (United Kingdom); Majima, Yutaka [Tokyo Institute of Technology, Materials and Structures Laboratory (Japan)

2011-11-15

In this work we report the preparation of magnetic hematite hollow sub-micron spheres ({alpha}-Fe{sub 2}O{sub 3}) by colloidal suspensions of ferric nitrate nine-hydrate (Fe(NO{sub 3}){sub 3}{center_dot}9H{sub 2}O) particles in citric acid solution by following the sol-gel method. After the gel formation, the samples were annealed at different temperatures in an oxidizing atmosphere. Annealing at 180 Degree-Sign C resulted in an amorphous phase, without iron oxide formation. Annealing at 250 Degree-Sign C resulted in coexisting phases of hematite, maghemite and magnetite, whereas at 400 Degree-Sign C, only hematite and maghemite were found. Pure hematite hollow sub-micron spheres with porous shells were formed after annealing at 600 Degree-Sign C. The characterization was performed by X-ray diffraction (XRD), Moessbauer spectroscopy (MS) and scanning electron microscopy (SEM).

Low temperature synthesis and photocatalytic property of perovskite-type LaCoO3 hollow spheres

International Nuclear Information System (INIS)

Fu, Shasha; Niu, Helin; Tao, Zhiyin; Song, Jiming; Mao, Changjie; Zhang, Shengyi; Chen, Changle; Wang, Dong

2013-01-01

Highlights: •Hollow perovskite-type LaCoO 3 is fabricated by green colloidal template method. •Carbonaceous colloids acted as templates and offered internal heat source. •The calcination temperature to form perovskite-type LaCoO 3 was dropped to 550 °C. •The photocatalytic properties were studied upon UV irradiation. •Hollow perovskite-type LaCoO 3 shows excellent photocatalytic activity on dyes. -- Abstract: Hollow perovskite-type LaCoO 3 was successfully fabricated by surface-ion adsorption method utilizing the carbonaceous colloids as template under relatively low calcination temperature. Carbonaceous colloids not only acted as templates but also offered internal heat source during calcination process. The impact of calcined temperature and time on the structure and morphology of the product were studied and the possible formation process of perovskite-type LaCoO 3 hollow spheres was illustrated. The obtained product was characterized by SEM, TEM, XRD, TG-DSC, ICP-OES, BET and UV–visible absorption spectra. The photocatalytic activities for degradation of methylene blue, methyl orange and neutral red were tested. The good photocatalytic degradation activity of the three different dyes and the band gap of 2.07 eV make it a promising candidate material for photocatalytic applications

Enhanced photocatalytic performance and degradation pathway of Rhodamine B over hierarchical double-shelled zinc nickel oxide hollow sphere heterojunction

Science.gov (United States)

Zhang, Ying; Zhou, Jiabin; Cai, Weiquan; Zhou, Jun; Li, Zhen

2018-02-01

In this study, hierarchical double-shelled NiO/ZnO hollow spheres heterojunction were prepared by calcination of the metallic organic frameworks (MOFs) as a sacrificial template in air via a one-step solvothermal method. Additionally, the photocatalytic activity of the as-prepared samples for the degradation of Rhodamine B (RhB) under UV-vis light irradiation were also investigated. NiO/ZnO microsphere comprised a core and a shell with unique hierarchically porous structure. The photocatalytic results showed that NiO/ZnO hollow spheres exhibited excellent catalytic activity for RhB degradation, causing complete decomposition of RhB (200 mL of 10 g/L) under UV-vis light irradiation within 3 h. Furthermore, the degradation pathway was proposed on the basis of the intermediates during the photodegradation process using liquid chromatography analysis coupled with mass spectroscopy (LC-MS). The improvement in photocatalytic performance could be attributed to the p-n heterojunction in the NiO/ZnO hollow spheres with hierarchically porous structure and the strong double-shell binding interaction, which enhances adsorption of the dye molecules on the catalyst surface and facilitates the electron/hole transfer within the framework. The degradation mechanism of pollutant is ascribed to the hydroxyl radicals (rad OH), which is the main oxidative species for the photocatalytic degradation of RhB. This work provides a facile and effective approach for the fabrication of porous metal oxides heterojunction with high photocatalytic activity and thus can be potentially used in the environmental purification.

Solvent-induced synthesis of nitrogen-doped hollow carbon spheres with tunable surface morphology for supercapacitors

Science.gov (United States)

Liu, Feng; Yuan, Ren-Lu; Zhang, Ning; Ke, Chang-Ce; Ma, Shao-Xia; Zhang, Ru-Liang; Liu, Lei

2018-04-01

Nitrogen doped hollow carbon spheres (NHCSs) with tunable surface morphology have been prepared through one-pot carbonization method by using melamine-formaldehyde spheres as template and resorcinol-based resin as carbon precursor in ethanol-water solution. Well-dispersed NHCSs with particle size of 800 nm were obtained and the surface of NHCSs turn from smooth to tough, wrinkled, and finally concave by increasing the ethanol concentration. The fabricated NHCSs possessed high nitrogen content (3.99-4.83%) and hierarchical micro-dual mesoporous structure with surface area range of 265-405 m2 g-1 and total pore volume of 0.18-0.29 cm3 g-1, which contributed to high specific capacitance, excellent rate capability and long cycle life.

Response Surface Methodology for Design of Porous Hollow Sphere Thermal Insulator

Science.gov (United States)

Shohani, Nazanin; Pourmahdian, Saeed; Shirkavand Hadavand, Behzad

2017-11-01

In this study, response surface method is used for synthesizing polystyrene (PS) as sacrificial templates and optimizing the particle size. Three factors of initiator, stabilizer concentration and also stirring rate were selected as variable factors. Then, three different concentration of tetraethyl orthosilicate (TEOS) added to reaction media and core-shell structure with PS core and silica shell was developed. Finally, core-shell structure was changed to hollow silica sphere for using as thermal insulator. We observed that increased initiator concentration caused to larger PS particles, increase the stirring rate caused the smaller PS and also with increased the stabilizer concentration obtained that particle size decrease then after 2.5% began to increase. Also the optimum amount of TEOS was found.

Eosin Y-sensitized nanosheet-stacked hollow-sphere TiO2 for efficient photocatalytic H2 production under visible-light irradiation

Science.gov (United States)

Shi, Jinwen; Guan, Xiangjiu; Zhou, Zhaohui; Liu, Haipei; Guo, Liejin

2015-06-01

Nanosheet (with around 20 nm in thickness)-stacked hollow-sphere TiO2 was synthesized via a modified solvothermal reaction for different times followed by calcination treatment at different temperatures. After surface modification by different cations (H+ or Fe3+) and further sensitization by Eosin Y, the obtained photocatalysts achieved remarkably enhanced H2-production activity (about 4.2 times of that for Eosin Y-sensitized P25) and stability under visible-light irradiation. The improved photocatalytic performance was synergistically caused by the enhanced Eosin Y sensitization (due to the enlarged surface area and electropositively modified surface), the optimized crystal structure (well-crystallized anatase phase), and the unique micro/nanostructure (nanosheet-stacked hollow spheres). This work presented an effective route to explore new visible-light-driven H2-production photocatalysts by coupling nanomaterials with special morphologies and metal-free dyes with visible-light absorption.

Eosin Y-sensitized nanosheet-stacked hollow-sphere TiO2 for efficient photocatalytic H2 production under visible-light irradiation

International Nuclear Information System (INIS)

Shi, Jinwen; Guan, Xiangjiu; Zhou, Zhaohui; Liu, Haipei; Guo, Liejin

2015-01-01

Nanosheet (with around 20 nm in thickness)-stacked hollow-sphere TiO 2 was synthesized via a modified solvothermal reaction for different times followed by calcination treatment at different temperatures. After surface modification by different cations (H + or Fe 3+ ) and further sensitization by Eosin Y, the obtained photocatalysts achieved remarkably enhanced H 2 -production activity (about 4.2 times of that for Eosin Y-sensitized P25) and stability under visible-light irradiation. The improved photocatalytic performance was synergistically caused by the enhanced Eosin Y sensitization (due to the enlarged surface area and electropositively modified surface), the optimized crystal structure (well-crystallized anatase phase), and the unique micro/nanostructure (nanosheet-stacked hollow spheres). This work presented an effective route to explore new visible-light-driven H 2 -production photocatalysts by coupling nanomaterials with special morphologies and metal-free dyes with visible-light absorption

Low temperature synthesis and photocatalytic property of perovskite-type LaCoO{sub 3} hollow spheres

Energy Technology Data Exchange (ETDEWEB)

Fu, Shasha [School of Chemistry and Chemical Engineering, Anhui University, Hefei 230039 (China); Niu, Helin, E-mail: niuhelin@ahu.edu.cn [School of Chemistry and Chemical Engineering, Anhui University, Hefei 230039 (China); Tao, Zhiyin; Song, Jiming; Mao, Changjie; Zhang, Shengyi [School of Chemistry and Chemical Engineering, Anhui University, Hefei 230039 (China); Chen, Changle, E-mail: changle@ustc.edu.cn [CAS Key Laboratory of Soft Matter Chemistry and Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Wang, Dong [Department of Bio-Health Technology, College of Biomedical Science, Kangwon National University, Chuncheon, Gangwon-Do 200-701 (Korea, Republic of)

2013-11-05

Highlights: •Hollow perovskite-type LaCoO{sub 3} is fabricated by green colloidal template method. •Carbonaceous colloids acted as templates and offered internal heat source. •The calcination temperature to form perovskite-type LaCoO{sub 3} was dropped to 550 °C. •The photocatalytic properties were studied upon UV irradiation. •Hollow perovskite-type LaCoO{sub 3} shows excellent photocatalytic activity on dyes. -- Abstract: Hollow perovskite-type LaCoO{sub 3} was successfully fabricated by surface-ion adsorption method utilizing the carbonaceous colloids as template under relatively low calcination temperature. Carbonaceous colloids not only acted as templates but also offered internal heat source during calcination process. The impact of calcined temperature and time on the structure and morphology of the product were studied and the possible formation process of perovskite-type LaCoO{sub 3} hollow spheres was illustrated. The obtained product was characterized by SEM, TEM, XRD, TG-DSC, ICP-OES, BET and UV–visible absorption spectra. The photocatalytic activities for degradation of methylene blue, methyl orange and neutral red were tested. The good photocatalytic degradation activity of the three different dyes and the band gap of 2.07 eV make it a promising candidate material for photocatalytic applications.

Laser absorption spectroscopy of oxygen confined in highly porous hollow sphere xerogel.

Science.gov (United States)

Yang, Lin; Somesfalean, Gabriel; He, Sailing

2014-02-10

An Al2O3 xerogel with a distinctive microstructure is studied for the application of laser absorption spectroscopy of oxygen. The xerogel has an exceptionally high porosity (up to 88%) and a large pore size (up to 3.6 µm). Using the method of gas-in-scattering media absorption spectroscopy (GASMAS), a long optical path length (about 3.5m) and high enhancement factor (over 300 times) are achieved as the result of extremely strong multiple-scattering when the light is transmitted through the air-filled, hollow-sphere alumina xerogel. We investigate how the micro-physical feature influences the optical property. As part of the optical sensing system, the material's gas exchange dynamics are also experimentally studied.

Iron oxide nanoparticle layer templated by polydopamine spheres: a novel scaffold toward hollow-mesoporous magnetic nanoreactors.

Science.gov (United States)

Huang, Liang; Ao, Lijiao; Xie, Xiaobin; Gao, Guanhui; Foda, Mohamed F; Su, Wu

2015-01-14

Superparamagnetic iron oxide nanoparticle layers with high packing density and controlled thickness were in situ deposited on metal-affinity organic templates (polydopamine spheres), via one-pot thermal decomposition. The as synthesized hybrid structure served as a facile nano-scaffold toward hollow-mesoporous magnetic carriers, through surfactant-assisted silica encapsulation and its subsequent calcination. Confined but accessible gold nanoparticles were successfully incorporated into these carriers to form a recyclable catalyst, showing quick magnetic response and a large surface area (642.5 m(2) g(-1)). Current nano-reactors exhibit excellent catalytic performance and high stability in reduction of 4-nitrophenol, together with convenient magnetic separability and good reusability. The integration of compact iron oxide nanoparticle layers with programmable polydopamine templates paves the way to fabricate magnetic-response hollow structures, with high permeability and multi-functionality.

Micelle-template synthesis of hollow silica spheres for improving water vapor permeability of waterborne polyurethane membrane

OpenAIRE

Bao, Yan; Wang, Tong; Kang, Qiaoling; Shi, Chunhua; Ma, Jianzhong

2017-01-01

Hollow silica spheres (HSS) with special interior spaces, high specific surface area and excellent adsorption and permeability performance were synthesized via micelle-template method using cetyl trimethyl ammonium bromide (CTAB) micelles as soft template and tetraethoxysilane (TEOS) as silica precursor. SEM, TEM, FT-IR, XRD, DLS and BET-BJH were carried out to characterize the morphology and structure of as-obtained samples. The results demonstrated that the samples were amorphous with a hol...

Solvothermal synthesis of monodisperse LiFePO4 micro hollow spheres as high performance cathode material for lithium ion batteries.

Science.gov (United States)

Yang, Shiliu; Hu, Mingjun; Xi, Liujiang; Ma, Ruguang; Dong, Yucheng; Chung, C Y

2013-09-25

A microspherical, hollow LiFePO4 (LFP) cathode material with polycrystal structure was simply synthesized by a solvothermal method using spherical Li3PO4 as the self-sacrificed template and FeCl2·4H2O as the Fe(2+) source. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that the LFP micro hollow spheres have a quite uniform size of ~1 μm consisting of aggregated nanoparticles. The influences of solvent and Fe(2+) source on the phase and morphology of the final product were chiefly investigated, and a direct ion exchange reaction between spherical Li3PO4 templates and Fe(2+) ions was firstly proposed on the basis of the X-ray powder diffraction (XRD) transformation of the products. The LFP nanoparticles in the micro hollow spheres could finely coat a uniform carbon layer ~3.5 nm by a glucose solution impregnating-drying-sintering process. The electrochemical measurements show that the carbon coated LFP materials could exhibit high charge-discharge capacities of 158, 144, 125, 101, and even 72 mAh g(-1) at 0.1, 1, 5, 20, and 50 C, respectively. It could also maintain 80% of the initial discharge capacity after cycling for 2000 times at 20 C.

Novel syntactic foams made of ceramic hollow micro-spheres and starch: theory, structure and properties

Energy Technology Data Exchange (ETDEWEB)

Islam, M.M.; Kim, H.S. [University of Newcastle, Callaghan, NSW (Australia). Faculty of Engineering & Built Environments

2007-08-15

Novel syntactic foams for potential building material applications were developed using starch as binder and ceramic hollow micro-spheres available as waste from coal-fired power stations. Foams of four different micro-sphere size groups were manufactured with either pre- or post-mould gelatinization process. They were of ternary system including voids with a foam density range of approximately 0.33-0.44 g/cc. Compressive failure behaviour and mechanical properties of the manufactured foams were evaluated. Not much difference in failure behaviour or in mechanical properties between the two different processes (pre- and post-mould gels) was found for a given binder content. Compressive failure of all syntactic foams was of shear on plane inclined 45 degrees to compressive loading direction. Failure surfaces of most syntactic foams were characterized by debonded micro-spheres. Compressive strength and modulus of syntactic foams were found to be dependant mainly on binder content but mostly independent of micro-sphere size. Some conditions of relativity arising from properties of constituents leading to the rule of mixtures relationships for compressive strength and to understanding of compressive/transitional failure behaviour were developed. The developed relationships based on the rule of mixtures were partially verified. Some formation of starch webs on failure surfaces was discussed.

Controllable Synthesis of Functional Hollow Carbon Nanostructures with Dopamine As Precursor for Supercapacitors.

Science.gov (United States)

Liu, Chao; Wang, Jing; Li, Jiansheng; Luo, Rui; Shen, Jinyou; Sun, Xiuyun; Han, Weiqing; Wang, Lianjun

2015-08-26

N-doped hollow carbon spheres (N-HCSs) are promising candidates as electrode material for supercapacitor application. In this work, we report a facile one-step synthesis of discrete and highly dispersible N-HCSs with dopamine (DA) as a carbon precursor and TEOS as a structure-assistant agent in a mixture containing water, ethanol, and ammonia. The architectures of resultant N-HCSs, including yolk-shell hollow carbon spheres (YS-HCSs), single-shell hollow carbon spheres (SS-HCSs), and double-shells hollow carbon spheres (DS-HCSs), can be efficiently controlled through the adjustment of the amount of ammonia. To explain the relation and formation mechanism of these hollow carbon structures, the samples during the different synthetic steps, including polymer/silica spheres, carbon/silica spheres and silica spheres by combustion in air, were characterized by TEM. Electrochemical measurements performed on YS-HCSs, SS-HCSs, and DS-HCSs showed high capacitance with 215, 280, and 381 F g(-1), respectively. Moreover, all the nitrogen-doped hollow carbon nanospheres showed a good cycling stability 97.0% capacitive retention after 3000 cycles. Notably, the highest capacitance of DS-HCSs up to 381 F g(-1) is higher than the capacitance reported so far for many carbon-based materials, which may be attributed to the high surface area, hollow structure, nitrogen functionalization, and double-shell architecture. These kinds of N-doped hollow-structured carbon spheres may show promising prospects as advanced energy storage materials and catalyst supports.

A hollow sphere soft lithography approach for long-term hanging drop methods.

Science.gov (United States)

Lee, Won Gu; Ortmann, Daniel; Hancock, Matthew J; Bae, Hojae; Khademhosseini, Ali

2010-04-01

In conventional hanging drop (HD) methods, embryonic stem cell aggregates or embryoid bodies (EBs) are often maintained in small inverted droplets. Gravity limits the volumes of these droplets to less than 50 microL, and hence such cell cultures can only be sustained for a few days without frequent media changes. Here we present a new approach to performing long-term HD methods (10-15 days) that can provide larger media reservoirs in a HD format to maintain more consistent culture media conditions. To implement this approach, we fabricated hollow sphere (HS) structures by injecting liquid drops into noncured poly(dimethylsiloxane) mixtures. These structures served as cell culture chambers with large media volumes (500 microL in each sphere) where EBs could grow without media depletion. The results showed that the sizes of the EBs cultured in the HS structures in a long-term HD format were approximately twice those of conventional HD methods after 10 days in culture. Further, HS cultures showed multilineage differentiation, similar to EBs cultured in the HD method. Due to its ease of fabrication and enhanced features, this approach may be of potential benefit as a stem cell culture method for regenerative medicine.

L-cysteine-assisted synthesis of hierarchical NiS2 hollow spheres supported carbon nitride as photocatalysts with enhanced lifetime

Science.gov (United States)

Zhu, Chengzhang; Jiang, Zhifeng; Chen, Linlin; Qian, Kun; Xie, Jimin

2017-03-01

Novel hierarchical NiS2 hollow spheres modified by graphite-like carbon nitride were prepared using a facile L-cysteine-assisted solvothermal route. The NiS2/g-C3N4 composites exhibited excellent photocatalytic efficiency in rhodamine B, methyl orange and ciprofloxacin degradation as compared to single g-C3N4 and NiS2, which could be due to the synergistic effects of the unique hollow sphere-like structure, strong visible-light absorption and increased separation rate of the photoinduced electron-hole pairs at the intimate interface of heterojunctions. A suitable combination of g-C3N4 with NiS2 showed the best photocatalytic performance. In addition, an electron spin resonance and trapping experiment demonstrated that the photogenerated hydroxyl radicals and superoxide radicals were the two main photoactive species in photocatalysis. A possible photocatalytic mechanism of NiS2/g-C3N4 composites under visible light irradiation is also proposed. The strategy presented here can be extended to a general strategy for constructing 3D/2D heterostructured photocatalysts for broad applications in photocatalysis.

Copper Silicate Hydrate Hollow Spheres Constructed by Nanotubes Encapsulated in Reduced Graphene Oxide as Long-Life Lithium-Ion Battery Anode.

Science.gov (United States)

Wei, Xiujuan; Tang, Chunjuan; Wang, Xuanpeng; Zhou, Liang; Wei, Qiulong; Yan, Mengyu; Sheng, Jinzhi; Hu, Ping; Wang, Bolun; Mai, Liqiang

2015-12-09

Hierarchical copper silicate hydrate hollow spheres-reduced graphene oxide (RGO) composite is successfully fabricated by a facile hydrothermal method using silica as in situ sacrificing template. The electrochemical performance of the composite as lithium-ion battery anode was studied for the first time. Benefiting from the synergistic effect of the hierarchical hollow structure and conductive RGO matrix, the composite exhibits excellent long-life performance and rate capability. A capacity of 890 mAh/g is achieved after 200 cycles at 200 mA/g and a capacity of 429 mAh/g is retained after 800 cycles at 1000 mA/g. The results indicate that the strategy of combining hierarchical hollow structures with conductive RGO holds the potential in addressing the volume expansion issue of high capacity anode materials.

Review of Synthetic Methods to Form Hollow Polymer Nanocapsules

Energy Technology Data Exchange (ETDEWEB)

Barker, Madeline T. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2014-03-13

Syntactic foams have grown in interest due to the widened range of applications because of their mechanical strength and high damage tolerance. In the past, hollow glass or ceramic particles were used to create the pores. This paper reviews literature focused on the controlled synthesis of hollow polymer spheres with diameters ranging from 100 –200 nm. By using hollow polymer spheres, syntactic foams could reach ultra-low densities.

Eosin Y-sensitized nanosheet-stacked hollow-sphere TiO{sub 2} for efficient photocatalytic H{sub 2} production under visible-light irradiation

Energy Technology Data Exchange (ETDEWEB)

Shi, Jinwen, E-mail: jinwen-shi@mail.xjtu.edu.cn; Guan, Xiangjiu; Zhou, Zhaohui; Liu, Haipei; Guo, Liejin [Xi’an Jiaotong University (XJTU), State Key Laboratory of Multiphase Flow in Power Engineering (MFPE), International Research Center for Renewable Energy IRCRE (China)

2015-06-15

Nanosheet (with around 20 nm in thickness)-stacked hollow-sphere TiO{sub 2} was synthesized via a modified solvothermal reaction for different times followed by calcination treatment at different temperatures. After surface modification by different cations (H{sup +} or Fe{sup 3+}) and further sensitization by Eosin Y, the obtained photocatalysts achieved remarkably enhanced H{sub 2}-production activity (about 4.2 times of that for Eosin Y-sensitized P25) and stability under visible-light irradiation. The improved photocatalytic performance was synergistically caused by the enhanced Eosin Y sensitization (due to the enlarged surface area and electropositively modified surface), the optimized crystal structure (well-crystallized anatase phase), and the unique micro/nanostructure (nanosheet-stacked hollow spheres). This work presented an effective route to explore new visible-light-driven H{sub 2}-production photocatalysts by coupling nanomaterials with special morphologies and metal-free dyes with visible-light absorption.

Synthesis of nano grade hollow silica sphere via a soft template method.

Science.gov (United States)

Tsai, Ming-Shyong; Li, Miao Ju; Yen, Fu-Hsu

2008-06-01

The nano grade hollow silica sphere (HSS) was synthesized by a novel soft template method. We found that the precipitate of aluminate had a porous structure that could be the soft template for HSS. After mixing the colloidal silica with the aluminate precipitate, the bubble trapped in this porous structure could form the nano grade HSS. The aluminate precipitate was removed by adjusting the pH of the slurry to approximately 1. The outside diameter, the specific surface, and the mean pore size diameter of the forming HSS were 60-90 nm, 571 m2/g, and 3 nm, respectively. The formed HSS was collected by modifying the surface with Si(OCH3)3CHCH2 (VTMO) and then filtrating the precipitated gel in the n-butanol and ethanol solvent system.

Poly(vinyl alcohol)-Assisted Fabrication of Hollow Carbon Spheres/Reduced Graphene Oxide Nanocomposites for High-Performance Lithium-Ion Battery Anodes.

Science.gov (United States)

Zhang, Yunqiang; Ma, Qiang; Wang, Shulan; Liu, Xuan; Li, Li

2018-05-22

Three-dimensional hollow carbon spheres/reduced graphene oxide (DHCSs/RGO) nanocomposites with high-level heteroatom doping and hierarchical pores are fabricated via a versatile method. Poly(vinyl alcohol) (PVA) that serves as a dispersant and nucleating agent is used as the nonremoval template for synthesizing melamine resin (MR) spheres with abundant heteroatoms, which are subsequently composited with graphene oxide (GO). Use of PVA and implementation of freezing treatment prevent agglomeration of MR spheres within the GO network. Molten KOH is used to achieve the one-step carbonization/activation/reduction for the synthesis of DHCSs/RGO. DHCSs/RGO annealed at 700 °C shows superior discharge capacity of 1395 mA h/g at 0.1 A/g and 606 mA h/g at 5 A/g as well as excellent retentive capacity of 755 mA h/g after 600 cycles at a current density of 2 A/g. An extra CO 2 activation leads to further enhancement of electrochemical performance with outstanding discharge capacity of 1709 mA h/g at 0.1 A/g and 835 mA h/g at 2 A/g after 600 cycles. This work may improve our understanding of the synthesis of graphene-like nanocomposites with hollow and porous carbon architectures and fabrication of high-performance functional devices.

New Strategies for Constructing Polymeric Micelles and Hollow Spheres Via Self-Assembly

Institute of Scientific and Technical Information of China (English)

Ming Jiang

2005-01-01

@@ 1Introduction In recent years, self-assembly of block copolymers leading to micelles in selective solvents, which dissolve only one of the blocks, has developed rapidly because the micelles are very strong candidates for potential applications in advanced technologies. The micelles usually have core-shell structure which are connected by covalent bonds. Based on our long-term research on interpolymer complexation due to hydrogen bonding, where we noticed that the complexation often led to the formation of irregular aggregates, we succeeded recently in developing a series of new approaches to polymeric micelles and hollow spheres via specific intermolecular interactions. As in these approaches, a variety of polymers with interacting groups i.e. homopolymers, random copolymers, graft copolymers as well as low mass compounds (LMC), can be used as building blocks, our research strategies have substantially extended the field of self-assembly.

The thermal conductivity of beds of spheres

International Nuclear Information System (INIS)

McElroy, D.L.; Weaver, F.J.; Shapiro, M.; Longest, A.W.; Yarbrough, D.W.

1987-01-01

The thermal conductivities (k) of beds of solid and hollow microspheres were measured using two radial heat flow techniques. One technique provided k-data at 300 K for beds with the void spaces between particles filled with argon, nitrogen, or helium from 5 kPa to 30 MPa. The other technique provided k-data with air at atmospheric pressure from 300 to 1000 K. The 300 K technique was used to study bed systems with high k-values that can be varied by changing the gas type and gas pressure. Such systems can be used to control the operating temperature of an irradiation capsule. The systems studied included beds of 500 μm dia solid Al 2 O 3 , the same Al 2 O 3 spheres mixed with spheres of silica--alumina or with SiC shards, carbon spheres, and nickel spheres. Both techniques were used to determine the k-value of beds of hollow spheres with solid shells of Al 2 O 3 , Al 2 O 3 /center dot/7 w/o Cr 2 O 3 , and partially stabilized ZrO 2 . The hollow microspheres had diameters from 2100 to 3500 μm and wall thicknesses from 80 to 160 μm. 12 refs., 7 figs., 4 tabs

Micelle-template synthesis of hollow silica spheres for improving water vapor permeability of waterborne polyurethane membrane

Science.gov (United States)

Bao, Yan; Wang, Tong; Kang, Qiaoling; Shi, Chunhua; Ma, Jianzhong

2017-04-01

Hollow silica spheres (HSS) with special interior spaces, high specific surface area and excellent adsorption and permeability performance were synthesized via micelle-template method using cetyl trimethyl ammonium bromide (CTAB) micelles as soft template and tetraethoxysilane (TEOS) as silica precursor. SEM, TEM, FT-IR, XRD, DLS and BET-BJH were carried out to characterize the morphology and structure of as-obtained samples. The results demonstrated that the samples were amorphous with a hollow structure and huge specific surface area. The growth of HSS was an inward-growth mechanism along template. Notably, we have provided a new and interesting fundamental principle for HSS materials by precisely controlling the ethanol-to-water volume ratio. In addition, the as-obtained HSS were mixed with waterborne polyurethane (WPU) to prepare WPU/HSS composite membrane. Various characterizations (SEM, TEM, FT-IR and TGA) revealed the morphology, polydispersity and adherence between HSS and WPU. Performance tests showed that the introduction of HSS can improve the water vapor permeability of composite membrane, promoting its water resistance and mechanical performance at the same time.

Synthesis of Hollow Silica by Stober Method with Double Polymers as Templates

International Nuclear Information System (INIS)

Nguyen, Anhthu; Park, Chang Woo; Kim, Sang Hern

2014-01-01

The hollow SiO 2 spheres with uniform size were synthesized by a modified stoeber method under the control of polyelectrolytes (PSS and PAA) as templates. This synthetic route includes the formation of spherical colloid micelle in ethanol solution, hydrolysis of TEOS under control of ammonia, and the removal of polyelectrolyte by washing or calcination. Hollow silica spheres with controllable core diameters between 100 and 270 nm and wall thickness between 15 and 50 nm have been synthesized. The influence of template solution concentration and solvent and dispersant on the formation of silica hollow spheres is studied and reported in detail

Construct 3D porous hollow Co3O4 micro-sphere: A potential oxidizer of nano-energetic materials with superior reactivity

Science.gov (United States)

Wang, Jun; Zheng, Bo; Qiao, Zhiqiang; Chen, Jin; Zhang, Liyuan; Zhang, Long; Li, Zhaoqian; Zhang, Xingquan; Yang, Guangcheng

2018-06-01

High energy density and rapid reactivity are the future trend for nano-energetic materials. Energetic performance of nano-energetic materials depends on the interfacial diffusion and mass transfer during the reacted process. However, the development of desired structure to significantly enhance reactivity still remains challenging. Here we focused on the design and preparation of 3D porous hollow Co3O4 micro-spheres, in which gas-blowing agents (air) and maximize interfacial interactions were introduced to enhance mass transport and reduce the diffusion distance between the oxidizer and fuel (Aluminum). The 3D hierarchical Co3O4/Al based nano-energetic materials show a low-onset decomposition temperature (423 °C), and high heat output (3118 J g-1) resulting from porous and hollow nano-structure of Co3O4 micro-spheres. Furthermore, 3D hierarchical Co3O4/Al arrays were directly fabricated on the silicon substrate, which was fully compatible with silicon-based microelectromechanical systems to achieve functional nanoenergetics-on-a-chip. This approach provides a simple and efficient way to fabricate 3D ordered nano-energetic arrays with superior reactivity and the potential on the application in micro-energetic devices.

Stem/progenitor cells derived from the cochlear sensory epithelium give rise to spheres with distinct morphologies and features.

Science.gov (United States)

Diensthuber, Marc; Oshima, Kazuo; Heller, Stefan

2009-06-01

Nonmammalian vertebrates regenerate lost sensory hair cells by means of asymmetric division of supporting cells. Inner ear or lateral line supporting cells in birds, amphibians, and fish consequently serve as bona fide stem cells resulting in high regenerative capacity of hair cell-bearing organs. Hair cell regeneration does not happen in the mammalian cochlea, but cells with proliferative capacity can be isolated from the neonatal cochlea. These cells have the ability to form clonal floating colonies, so-called spheres, when cultured in nonadherent conditions. We noticed that the sphere population derived from mouse cochlear sensory epithelium cells was heterogeneous, consisting of morphologically distinct sphere types, hereby classified as solid, transitional, and hollow. Cochlear sensory epithelium-derived stem/progenitor cells initially give rise to small solid spheres, which subsequently transition into hollow spheres, a change that is accompanied by epithelial differentiation of the majority of sphere cells. Only solid spheres, and to a lesser extent, transitional spheres, appeared to harbor self-renewing stem cells, whereas hollow spheres could not be consistently propagated. Solid spheres contained significantly more rapidly cycling Pax-2-expressing presumptive otic progenitor cells than hollow spheres. Islet-1, which becomes upregulated in nascent sensory patches, was also more abundant in solid than in hollow spheres. Likewise, hair cell-like cells, characterized by the expression of multiple hair cell markers, differentiated in significantly higher numbers in cell populations derived from solid spheres. We conclude that cochlear sensory epithelium cell populations initially give rise to small solid spheres that have self-renewing capacity before they subsequently convert into hollow spheres, a process that is accompanied by loss of stemness and reduced ability to spontaneously give rise to hair cell-like cells. Solid spheres might, therefore, represent

A facile one-pot hydrothermal method to prepare europium-doped titania hollow phosphors and their sensitized luminescence properties

Energy Technology Data Exchange (ETDEWEB)

Feng Xuan; Yang Ling; Zhang Nianchun [Department of Chemistry and Institute of Nanochemistry, Jinan University, 601 Western Huangpu Road, Guangzhou 510632 (China); Liu Yingliang, E-mail: tliuyl@jnu.edu.c [Department of Chemistry and Institute of Nanochemistry, Jinan University, 601 Western Huangpu Road, Guangzhou 510632 (China)

2010-09-17

Research highlights: {yields} The strongest emission intensity was observed with TiO{sub 2}:Eu{sub 0.2} hollow spheres and TiO{sub 2}:Eu{sub 0.2} hollow spheres calcining at 550 {sup o}C. Moreover, the strongest excitation of TiO{sub 2}:Eu{sub 0.2} hollow spheres transferred from 400 to 500 {sup o}C and the effective nonradiative energy transfer from the TiO{sub 2} hollow spheres host matrix to Eu{sup 3+} ions crystal field states was realized due to changes of crystalline field in the environment around Eu{sup 3+} ions occupying Ti{sup 4+} sites. The proposed energy transfer mechanism was that UV light is absorbed in the band of TiO{sub 2} hollow spheres crystal and then the energy is relaxed to the defect states of TiO{sub 2} host. The energy can transfer to the crystal states of Eu{sup 3+} ions ({sup 7}F{sub j}, j = 0, 1, 2, 3 and 4), which results in efficient photoluminescence. The fluorescent intensity of TiO{sub 2}:Eu{sub 0.2} hollow spheres was 2.2 times as strong as that of TiO{sub 2}:Eu{sub 0.2} bulk material. - Abstract: Monodisperse europium-activated titania hollow phosphors had been synthesized by a facile one-pot hydrothermal method using carbon spheres as hard templates. Samples were characterized by X-ray powder diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, energy dispersive spectrometer and photoluminescence spectrum. The strongest emission intensity was observed with TiO{sub 2}:Eu{sub 0.2} hollow spheres and TiO{sub 2}:Eu{sub 0.2} hollow spheres calcining at 550 {sup o}C. Moreover, the strongest excitation of TiO{sub 2}:Eu{sub 0.2} hollow spheres transferred from 400 to 500 {sup o}C and the effective nonradiative energy transfer from the TiO{sub 2} hollow spheres host matrix to Eu{sup 3+} ions crystal field states was realized due to changes of crystalline field in the environment around Eu{sup 3+} ions occupying Ti{sup 4+} sites. The proposed energy transfer mechanism was that UV light is absorbed in the band

Classical molecular dynamics and quantum abs-initio studies on lithium-intercalation in interconnected hollow spherical nano-spheres of amorphous Silicon

DEFF Research Database (Denmark)

Bhowmik, Arghya; Malik, R.; Prakash, S.

2016-01-01

A high concentration of lithium, corresponding to charge capacity of ~4200 mAh/g, can be intercalated in silicon. Unfortunately, due to high intercalation strain leading to fracture and consequent poor cyclability, silicon cannot be used as anode in lithium ion batteries. But recently interconnec......A high concentration of lithium, corresponding to charge capacity of ~4200 mAh/g, can be intercalated in silicon. Unfortunately, due to high intercalation strain leading to fracture and consequent poor cyclability, silicon cannot be used as anode in lithium ion batteries. But recently...... interconnected hollow nano-spheres of amorphous silicon have been found to exhibit high cyclability. The absence of fracture upon lithiation and the high cyclability has been attributed to reduction in intercalation stress due to hollow spherical geometry of the silicon nano-particles. The present work argues...... that the hollow spherical geometry alone cannot ensure the absence of fracture. Using classical molecular dynamics and density functional theory based simulations; satisfactory explanation to the absence of fracture has been explored at the atomic scale....

A one-step carbonization route towards nitrogen-doped porous carbon hollow spheres with ultrahigh nitrogen content for CO 2 adsorption

KAUST Repository

Wang, Yu

2015-01-01

© The Royal Society of Chemistry 2015. Nitrogen doped porous carbon hollow spheres (N-PCHSs) with an ultrahigh nitrogen content of 15.9 wt% and a high surface area of 775 m² g^-1 were prepared using Melamine-formaldehyde nanospheres as hard templates and nitrogen sources. The N-PCHSs were completely characterized and were found to exhibit considerable CO2 adsorption performance (4.42 mmol g^-1).

Sandwich-like C@SnO2/Sn/void@C hollow spheres as improved anode materials for lithium ion batteries

Science.gov (United States)

Wang, Huijun; Jiang, Xinya; Chai, Yaqin; Yang, Xia; Yuan, Ruo

2018-03-01

As lithium ion batteries (LIBs) anode, SnO2 suffers fast capacity fading due to its large volume expansion during discharge/charge process. To overcome the problem, sandwich-like C@SnO2/Sn/void@C hollow spheres (referred as C@SnO2/Sn/void@C HSs) are prepared by in-situ polymerization and carbonization, using hollow SnO2 as self-template and dopamine as carbon source. The C@SnO2/Sn/void@C HSs possesses the merits of hollow and core/void/shell structure, so that they can accommodate the volume change under discharge/charge process, shorten the transmission distance of Li ions, own more contact area for the electrolyte. Thanks to these advantages, C@SnO2/Sn/void@C HSs display excellent electrochemical performance as anode materials for LIBs, which deliver a high capacity of 786.7 mAh g-1 at the current density of 0.5 A g-1 after 60 cycles. The simple synthesis method for C@SnO2/Sn/void@C HSs with special structure will provide a promising method for preparing other anode materials for LIBs.

Experimental stress analysis of large plastic deformations in a hollow sphere deformed by impact against a concrete block

Science.gov (United States)

Morris, R. E.

1973-01-01

An experimental plastic strain measurement system is presented for use on the surface of high velocity impact test models. The system was used on a hollow sphere tested in impact against a reinforced concrete block. True strains, deviatoric stresses, and true stresses were calculated from experimental measurements. The maximum strain measured in the model was small compared to the true failure strain obtained from static tensile tests of model material. This fact suggests that a much greater impact velocity would be required to cause failure of the model shell structure.

Research Update: Facile synthesis of CoFe2O4 nano-hollow spheres for efficient bilirubin adsorption

Science.gov (United States)

Rakshit, Rupali; Pal, Monalisa; Chaudhuri, Arka; Mandal, Madhuri; Mandal, Kalyan

2015-11-01

Herein, we report an unprecedented bilirubin (BR) adsorption efficiency of CoFe2O4 (CFO) nanostructures in contrast to the commercially available activated carbon and resin which are generally used for haemoperfusion and haemodialysis. We have synthesized CFO nanoparticles of diameter 100 nm and a series of nano-hollow spheres of diameter 100, 160, 250, and 350 nm using a simple template free solvothermal technique through proper variation of reaction time and capping agent, oleylamine (OLA), respectively, and carried out SiO2 coating by employing Stöber method. The comparative BR adsorption study of CFO and SiO2 coated CFO nanostructures indicates that apart from porosity and hollow configuration of nanostructures, the electrostatic affinity between anionic carboxyl group of BR and cationic amine group of OLA plays a significant role in adsorbing BR. Finally, we demonstrate that the BR adsorption capacity of the nanostructures can be tailored by varying the morphology as well as size of the nanostructures. We believe that our developed magnetic nanostructures could be considered as a potential material towards therapeutic applications against hyperbilirubinemia.

Controlled synthesis of ZnO hollow microspheres via precursor-template method and its gas sensing property

International Nuclear Information System (INIS)

Tian, Yu; Li, Jinchai; Xiong, Hui; Dai, Jiangnan

2012-01-01

Highlights: ► Zn powder as precursor template for synthesis ZnO hollow spheres. ► Different precursor templates result in different ZnO nanostructures. ► Different experimental conditions enable growth of different surface morphologies of ZnO sphere. ► ZnO hollow sphere materials have good gas sensing performance for detecting ethanol gas. - Abstract: Using Zn powder as precursor templates, ZnO hollow microspheres were successfully prepared by thermal evaporation method and characterized by X-ray diffraction analysis, scanning electron microscope and transmission electron microscope. It was found that different size and shape of precursor resulted in different ZnO nanostructures. When varying experimental conditions, such as air flow rate and working pressure, ZnO hollow spheres with different surface morphologies could be obtained. The advantages of the present synthetic technology are simple, relatively low cost, and high reproducibility. A gas sensor was fabricated from the as-prepared ZnO hollow microspheres and tested to the ethanol gas at different operating temperatures.

A density functional theory study of the TMG adsorption on the GaN surface

Energy Technology Data Exchange (ETDEWEB)

Ptasinska, Maria; Soltys, Jakub; Piechota, Jacek [Interdisciplinary Centre for Materials Modelling, University of Warsaw, ul. Pawinskiego 5a, 02-106 Warszawa (Poland); Krukowski, Stanislaw [Interdisciplinary Centre for Materials Modelling, University of Warsaw, ul. Pawinskiego 5a, 02-106 Warszawa (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland)

2011-07-01

TMG (trimetylogallium) and NH{sub 3} (ammonia) are widely used reactants in the metal organic chemical vapor deposition (MOCVD) technique used in the growth of the GaN thin films. We have recently examined theoretically, with the help of the density functional theory (DFT), TMG adsorption on the GaN(0001) surface in order to study formation of bonds between Ga and N. Dangling bonds on the GaN(0001) surface were saturated with the hydrogen atoms. The slab polarization, which is due to the dangling bonds present on the GaN(0001) surface, and energy of the system in the vicinity of TMG was computed for different distances between the surface atoms and TMG. We also studied TMG diffusion on the GaN surface. As a result, the energy path for diffusion from Top N to Hollow was obtained.

Multifunctional Roles of TiO 2 Nanoparticles for Architecture of Complex Core−Shells and Hollow Spheres of SiO 2 −TiO 2 −Polyaniline System

KAUST Repository

Wang, Dan Ping; Zeng, Hua Chun

2009-01-01

to prepare inorganic-polymer nanocomposites. In this work, we explore the roles of metal-oxide nanoparticles (anatase TiO2) in the area of constructional synthesis of highly complex core-shell and hollow sphere nanostructures comprising SiO2, TiO2

Double hollow MoS{sub 2} nano-spheres: Synthesis, tribological properties, and functional conversion from lubrication to photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Liu, Yueru [Department of Chemical and Materials Engineering, Hefei University, Hefei 230601 (China); Hu, Kunhong, E-mail: hukunhong@163.com [Department of Chemical and Materials Engineering, Hefei University, Hefei 230601 (China); Hu, Enzhu; Guo, Jianhua; Han, Chengliang [Department of Chemical and Materials Engineering, Hefei University, Hefei 230601 (China); Hu, Xianguo [Institute of Tribology, Hefei University of Technology, Hefei 230009 (China)

2017-01-15

Highlights: • Novel double-hollow-sphere MoS{sub 2} nanoparticles were synthesized on sericite. • Friction and wear decreased by 22.4 and 63.5% by the novel MoS{sub 2}/sericite. • Friction induced conversion of MoS{sub 2}/sericite from lubricant to catalyst. • MoS{sub 2}/sericite can be used as a photocatalyst after lubricating service life. • A possible approach was proposed for designing a novel green lubricant. - Abstract: Molybdenum disulfide (MoS{sub 2}) has extensive applications in industries as solid lubricants and catalysts. To improve the lubricating performance of MoS{sub 2}, novel double-hollow-sphere MoS{sub 2} (DHSM) nanoparticles with an average diameter of approximately 90 nm were synthesized on sericite mica (SM). When the DHSM/SM composite was used as an additive in polyalphaolefin oil, friction and wear decreased by 22.4% and 63.5% respectively. The low friction and wear were attributed to the easy exfoliation of DHSM. The DHSM/SM composite was then rubbed under 40 MPa for 1 h to investigate the exfoliation and functional conversion behaviors of DHSM. Results showed that DHSM (lubricating structure) on SM could be completely exfoliated into nanosheets (catalytic structure) by rubbing. The nanosheets exfoliated from DHSM presented good photocatalytic activity for the removal of organic compounds from waste water. This work provided both a novel solid lubricant for industrial applications and a possible approach to designing a novel green lubricant for use as a photocatalyst in organic-waste treatment after lubricating service life.

Morphology conserving aminopropyl functionalization of hollow silica nanospheres in toluene

Science.gov (United States)

Dobó, Dorina G.; Berkesi, Dániel; Kukovecz, Ákos

2017-07-01

Inorganic nanostructures containing cavities of monodisperse diameter distribution find applications in e.g. catalysis, adsorption and drug delivery. One of their possible synthesis routes is the template assisted core-shell synthesis. We synthesized hollow silica spheres around polystyrene cores by the sol-gel method. The polystyrene template was removed by heat treatment leaving behind a hollow spherical shell structure. The surface of the spheres was then modified by adding aminopropyl groups. Here we present the first experimental evidence that toluene is a suitable alternative functionalization medium for the resulting thin shells, and report the comprehensive characterization of the amino-functionalized hollow silica spheres based on scanning electron microscopy, transmission electron microscopy, N2 adsorption, FT-IR spectroscopy, Raman spectroscopy and electrokinetic potential measurement. Both the presence of the amino groups and the preservation of the hollow spherical morphology were unambiguously proven. The introduction of the amine functionality adds amphoteric character to the shell as shown by the zeta potential vs. pH function. Unlike pristine silica particles, amino-functionalized nanosphere aqueous sols can be stable at both acidic and basic conditions.

Jingle-bell-shaped ferrite hollow sphere with a noble metal core: Simple synthesis and their magnetic and antibacterial properties

Science.gov (United States)

Li, Siheng; Wang, Enbo; Tian, Chungui; Mao, Baodong; Kang, Zhenhui; Li, Qiuyu; Sun, Guoying

2008-07-01

In this paper, a simple strategy is developed for rational fabrication of a class of jingle-bell-shaped hollow structured nanomaterials marked as Ag@ MFe 2O 4 ( M=Ni, Co, Mg, Zn), consisting of ferrite hollow shells and metal nanoparticle cores, using highly uniform colloidal Ag@C microspheres as template. The final composites were obtained by direct adsorption of metal cations Fe 3+ and M 2+ on the surface of the Ag@C spheres followed by calcination process to remove the middle carbon shell and transform the metal ions into pure phase ferrites. The as-prepared composites were characterized by X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray analysis (EDX), X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-vis spectroscopy and SQUID magnetometer. The results showed that the composites possess the magnetic property of the ferrite shell and the optical together with antibacterial property of the Ag core.

Classical molecular dynamics and quantum ab-initio studies on lithium-intercalation in interconnected hollow spherical nano-spheres of amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Bhowmik, A. [Atomic Scale Modelling and Materials, Department of Energy Conversion and Storage, Technical University of Denmark, Rios Campus, Frederiksborgvej 399, DK-4000 Roskilde (Denmark); Malik, R. [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, 721302 (India); Prakash, S. [Defense Metallurgical Research Laboratory, Hyderabad (India); Sarkar, T.; Bharadwaj, M.D. [Center for Study of Science Technology and Policy, Bangalore 560094 (India); Aich, S. [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, 721302 (India); Ghosh, S., E-mail: sudipto@metal.iitkgp.ernet.in [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, 721302 (India)

2016-04-25

A high concentration of lithium, corresponding to charge capacity of ∼4200 mAh/g, can be intercalated in silicon. Unfortunately, due to high intercalation strain leading to fracture and consequent poor cyclability, silicon cannot be used as anode in lithium ion batteries. But recently interconnected hollow nano-spheres of amorphous silicon have been found to exhibit high cyclability. The absence of fracture upon lithiation and the high cyclability has been attributed to reduction in intercalation stress due to hollow spherical geometry of the silicon nano-particles. The present work argues that the hollow spherical geometry alone cannot ensure the absence of fracture. Using classical molecular dynamics and density functional theory based simulations; satisfactory explanation to the absence of fracture has been explored at the atomic scale. - Highlights: • Interconnected nanoshells of amorphous Si: best available lithium ion cell anode. • High cycle life not understood in the light of poor K{sub IC} of amorphous Si. • MD reveals: atomic density of interconnected structure is ∼16% less than bulk Si. • Leads to drastic reduction (DFT) in lithiation σ & metal like e{sup −} structure (high K{sub IC}). • Lowering of lithiation σ and increase in K{sub IC} result in high cycle life.

Fe3O4/C composite with hollow spheres in porous 3D-nanostructure as anode material for the lithium-ion batteries

Science.gov (United States)

Yang, Zhao; Su, Danyang; Yang, Jinping; Wang, Jing

2017-09-01

3d transition-metal oxides, especially Fe3O4, as anode materials for the lithium-ion batteries have been attracting intensive attentions in recent years due to their high energy capacity and low toxicity. A new Fe3O4/C composite with hollow spheres in porous three-dimensional (3D) nanostructure, which was synthesized by a facile solvothermal method using FeCl3·6H2O and porous spongy carbon as raw materials. The specific surface area and microstructures of composite were characterized by nitrogen adsorption-desorption isotherm method, FE-SEM and HR-TEM. A homogeneous distribution of hollow Fe3O4 spheres (diameter ranges from 120 nm to 150 nm) in the spongy carbon (pore size > 200 nm) conductive 3D-network significantly reduced the lithium-ion diffusion length and increased the electrochemical reaction area, and further more enhanced the lithium ion battery performance, such as discharge capacity and cycle life. As an anode material for the lithium-ion battery, the title composite exhibit excellent electrochemical properties. The Fe3O4/C composite electrode achieved a relatively high reversible specific capacity of 1450.1 mA h g-1 in the first cycle at 100 mA g-1, and excellent rate capability (69% retention at 1000 mA g-1) with good cycle stability (only 10% loss after 100 cycles).

Template-free synthesis and luminescent properties of hollow Ln:YOF (Ln = Eu or Er + Yb) microspheres

Energy Technology Data Exchange (ETDEWEB)

Martinez-Castro, E. [Instituto de Ciencia de Materiales de Sevilla (CSIC-US), Americo Vespucio 49, Isla de La Cartuja, 41092 Sevilla (Spain); García-Sevillano, J.; Cussó, F. [Dpto. Física de Materiales, C-04, Universidad Autónoma de Madrid, Avda. Francisco Tomás y Valiente, 7, 28049 Madrid (Spain); Ocaña, M., E-mail: mjurado@icmse.csic.es [Instituto de Ciencia de Materiales de Sevilla (CSIC-US), Americo Vespucio 49, Isla de La Cartuja, 41092 Sevilla (Spain)

2015-01-15

Highlights: • Hollow lanthanide doped YOF spheres have been synthesised through a template-free procedure. • Strong red emissions are observed for Eu-doped spheres under UV illumination. • Concentration quenching of luminescence takes place in the spheres at very high Eu doping levels. • Bright red emission is observed for Er, Yb codoped spheres, making this matrix advantageous for biomedical imaging. - Abstract: A method for the synthesis of hollow lanthanide doped yttrium oxyfluoride (YOF) spheres in the micrometer size range with cubic structure based on the pyrolysis at 600 °C of liquid aerosols generated from aqueous solutions containing the corresponding rare earth chlorides and trifluoroacetic acid has been developed. This procedure, which has been used for the first time for the synthesis of YFO based materials, is simpler and advantageous when compared with other methods usually employed for the production of hollow spheres since it does not require the use of sacrificial templates. In addition, it is continuous, which is desirable because of practical reasons. The procedure is also suitable for doping the YOF spheres with europium cations resulting in down converting red phosphors when activated with UV light, or for co-doping with both Er{sup 3+} and Yb{sup 3+} giving rise to up-converting phosphors, which emit intense red light under near infrared (NIR) irradiation. Because of their optical properties and hollow architecture, the developed materials may find applications in optoelectronic devices and biotechnology.

Geometrical Dynamics in a Transitioning Superconducting Sphere

Directory of Open Access Journals (Sweden)

Claycomb J. R.

2006-10-01

Full Text Available Recent theoretical works have concentrated on calculating the Casimir effect in curved spacetime. In this paper we outline the forward problem of metrical variation due to the Casimir effect for spherical geometries. We consider a scalar quantum field inside a hollow superconducting sphere. Metric equations are developed describing the evolution of the scalar curvature after the sphere transitions to the normal state.

Ag/α-Fe2O3 hollow microspheres: Preparation and application for hydrogen peroxide detection

Science.gov (United States)

Kang, Xinyuan; Wu, Zhiping; Liao, Fang; Zhang, Tingting; Guo, Tingting

2015-09-01

In this paper, we demonstrated a simple approach for preparing α-Fe2O3 hollow spheres by mixing ferric nitrate aqueous and glucose in 180 °C. The glucose was found to act as a soft template in the process of α-Fe2O3 hollow spheres formation. Ag/α-Fe2O3 hollow nanocomposite was obtained under UV irradiation without additional reducing agents or initiators. Synthesized Ag/α-Fe2O3 hollow composites exhibited remarkable catalytic performance toward H2O2 reduction. The electrocatalytic activity mechanism of Ag/α-Fe2O3/GCE were discussed toward the reduction of H2O2 in this paper.

Ag/α-Fe2O3 hollow microspheres: Preparation and application for hydrogen peroxide detection

International Nuclear Information System (INIS)

Kang, Xinyuan; Wu, Zhiping; Liao, Fang; Zhang, Tingting; Guo, Tingting

2015-01-01

In this paper, we demonstrated a simple approach for preparing α-Fe 2 O 3 hollow spheres by mixing ferric nitrate aqueous and glucose in 180 °C. The glucose was found to act as a soft template in the process of α-Fe 2 O 3 hollow spheres formation. Ag/α-Fe 2 O 3 hollow nanocomposite was obtained under UV irradiation without additional reducing agents or initiators. Synthesized Ag/α-Fe 2 O 3 hollow composites exhibited remarkable catalytic performance toward H 2 O 2 reduction. The electrocatalytic activity mechanism of Ag/α-Fe 2 O 3 /GCE were discussed toward the reduction of H 2 O 2 in this paper. - Graphical abstract: Glucose is carbonized as carbon balls in the 180 °C hydrothermal carbonization process, which plays a role of a soft template. Carbon spherical shell is rich in many hydroxyls, which have good hydrophilicity and surface reactivity. When Fe(NO 3 ) 3 is added to the aqueous solution of Glucose, the hydrophilic -OH will adsorb Fe 3+ to form coordination compound by coordination bond. α-FeOOH is formed on the surface of carbon balls by hydrothermal reaction. After calcination at 500 °C, carbon spheres react with oxygen to form carbon dioxide, which disappears in the air. Meanwhile α-FeOOH is calcined to form α-Fe 2 O 3 hollow spheres.

Hollow-anode plasma source for molecular beam epitaxy of gallium nitride

International Nuclear Information System (INIS)

Anders, A.; Newman, N.; Rubin, M.; Dickinson, M.; Jones, E.; Phatak, P.; Gassmann, A.

1996-01-01

GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30 endash 40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the open-quote open-quote anode close-quote close-quote plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al 2 O 3 at 600 endash 800 degree C. The films were investigated by photoluminescence, cathodoluminescence, x-ray diffraction, Rutherford backscattering, and particle-induced x-ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date. copyright 1996 American Institute of Physics

A template-free solvothermal synthesis and photoluminescence properties of multicolor Gd2O2S:xTb3+, yEu3+ hollow spheres

Science.gov (United States)

Sang, Xiaotong; Xu, Guangxi; Lian, Jingbao; Wu, Nianchu; Zhang, Xue; He, Jiao

2018-06-01

The multicolor Gd2O2S:xTb3+, yEu3+ hollow spheres were successfully synthesized via a template-free solvothermal route without the use of surfactant from commercially available Ln (NO3)3·6H2O (Ln = Gd, Tb and Eu), absolute ethanol, ethanediamine and sublimed sulfur as the starting materials. The phase, structure, particle morphology and photoluminescence (PL) properties of the as-obtained products were investigated by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM) and photoluminescence spectra. The influence of synthetic time on phase, structure and morphology was systematically investigated and discussed. The possible formation mechanism depending on synthetic time t for the Gd2O2S phase has been presented. These results demonstrate that the Gd2O2S hollow spheres could be obtained under optimal condition, namely solvothermal temperature T = 220 °C and synthetic time t = 16 h. The as-obtained Gd2O2S sample possesses hollow sphere structure, which has a typical size of about 2.5 μm in diameter and about 0.5 μm in shell thickness. PL spectroscopy reveals that the strongest emission peak for the Gd2O2S:xTb3+ and the Gd2O2S:yEu3+ samples is located at 545 nm and 628 nm, corresponding to 5D4→7F5 transitions of Tb3+ ions and 5D0→7F2 transitions of Eu3+ ions, respectively. The quenching concentration of Tb3+ ions and Eu3+ ions is 7%. In the case of Tb3+ and Eu3+ co-doped samples, when the concentration of Tb3+ or Eu3+ ions is 7%, the optimum concentration of Eu3+ or Tb3+ ions is determined to be 1%. Under 254 nm ultraviolet (UV) light excitation, the Gd2O2S:7%Tb3+, the Gd2O2S:7%Tb3+,1%Eu3+ and the Gd2O2S:7%Eu3+ samples give green, yellow and red light emissions, respectively. And the corresponding CIE coordinates vary from (0.3513, 0.5615), (0.4120, 0.4588) to (0.5868, 0.3023), which is also well consistent with their luminous photographs.

Experimental Study on Variable-Amplitude Fatigue of Welded Cross Plate-Hollow Sphere Joints in Grid Structures

Directory of Open Access Journals (Sweden)

Jin-Feng Jiao

2018-01-01

Full Text Available The fatigue stress amplitude of the welded cross plate-hollow sphere joint (WCPHSJ in a grid structure varies due to the random loading produced by suspending cranes. A total of 14 specimens considering three different types of WCPHSJs were prepared and tested using a specially designed test rig. Four typical loading conditions, “low-high,” “high-low,” “low-high-low,” and “high-low-high,” were first considered in the tests to investigate the fatigue behavior under variable load amplitudes, followed by metallographic analyses. The experimental and metallographic analysis results provide a fundamental understanding on the fatigue fracture form and fatigue mechanism of WCPHSJs. Based on the available data from constant-amplitude fatigue tests, the variable-amplitude fatigue life of the three types of WCPHSJs was estimated using the Miner rule and Corten-Dolan theory. Since both accumulative damage theories yield virtually same damaging results, the Miner rule is hence suggested to estimate the fatigue life of WCPHSJs.

A Sortase A-Immobilized Mesoporous Hollow Carbon Sphere-Based Biosensor for Detection of Gram-Positive Bacteria

Science.gov (United States)

Wang, Hongsu; Luo, Ruiping; Chen, Yang; Si, Qi; Niu, Xiaodi

2018-05-01

A sensor based on mesoporous carbon materials immobilized with sortase A (SrtA) for determination of Staphylococcus aureus (S. aureus) is reported. To prepare the biosensor, we first synthesized carboxyl-functionalized mesoporous hollow carbon spheres, then applied them as carriers for immobilization of SrtA. Based on the catalytic mechanism of SrtA, a highly sensitive, inexpensive, and rapid method was developed for S. aureus detection. The sensor showed a linear response in the bacterial concentration range of 0.125 × 102 colony-forming units (CFU) mL-1 to 2.5 × 102 CFU mL-1, with detection limit as low as 9.0 CFU mL-1. The method was successfully used for quantitative detection of S. aureus in whole milk samples, giving results similar to experimental results obtained from the plate counting method. This biosensor could also be used to detect other Gram-positive bacteria that secrete SrtA.

Complex Hollow Nanostructures: Synthesis and Energy-Related Applications.

Science.gov (United States)

Yu, Le; Hu, Han; Wu, Hao Bin; Lou, Xiong Wen David

2017-04-01

Hollow nanostructures offer promising potential for advanced energy storage and conversion applications. In the past decade, considerable research efforts have been devoted to the design and synthesis of hollow nanostructures with high complexity by manipulating their geometric morphology, chemical composition, and building block and interior architecture to boost their electrochemical performance, fulfilling the increasing global demand for renewable and sustainable energy sources. In this Review, we present a comprehensive overview of the synthesis and energy-related applications of complex hollow nanostructures. After a brief classification, the design and synthesis of complex hollow nanostructures are described in detail, which include hierarchical hollow spheres, hierarchical tubular structures, hollow polyhedra, and multi-shelled hollow structures, as well as their hybrids with nanocarbon materials. Thereafter, we discuss their niche applications as electrode materials for lithium-ion batteries and hybrid supercapacitors, sulfur hosts for lithium-sulfur batteries, and electrocatalysts for oxygen- and hydrogen-involving energy conversion reactions. The potential superiorities of complex hollow nanostructures for these applications are particularly highlighted. Finally, we conclude this Review with urgent challenges and further research directions of complex hollow nanostructures for energy-related applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of microporosity on the elasticity and yielding of thin-walled metallic hollow spheres

International Nuclear Information System (INIS)

Song, Jinliang; Sun, Quansheng; Yang, Zhenning; Luo, Shengmin; Xiao, Xianghui; Arwade, Sanjay R.; Zhang, Guoping

2017-01-01

Knowledge of the mechanical properties of porous metallic hollow spheres (MHS) thin wall is of key importance for understanding the engineering performance of both individual ultralight MHS and the innovative MHS-based bulk foams. This paper presents the first integrated experimental and numerical study to determine the elasticity and yielding of the porous MHS wall and their dependence on its microporosity. Nanoindentation was used to probe the Young's modulus and hardness of the nonporous MHS wall material, and synchrotron X-ray computed tomography (XCT) conducted to obtain its porous microstructure and pore morphology. Three-dimensional finite element modeling was performed to obtain the mechanical response of microcubes with varying porosity trimmed from the XCT-derived real digital model of the porous MHS wall. Results show that both the Young's modulus and yield strength of the porous wall decrease nonlinearly with increasing porosity, and their relationships follow the same format of a power law function and agree well with prior experimental results. The empirical relations also reflect certain features of pore morphology, such as pore connectivity and shape. These findings can shed lights on the design, manufacturing, and modeling of individual MHS and MHS-based foams.

Effects of microporosity on the elasticity and yielding of thin-walled metallic hollow spheres

Energy Technology Data Exchange (ETDEWEB)

Song, Jinliang [Department of Civil Engineering, Northeast Forestry University, Harbin 150040 (China); Department of Civil and Environmental Engineering, University of Massachusetts Amherst, Amherst, MA 01003 (United States); Sun, Quansheng [Department of Civil Engineering, Northeast Forestry University, Harbin 150040 (China); Yang, Zhenning; Luo, Shengmin [Department of Civil and Environmental Engineering, University of Massachusetts Amherst, Amherst, MA 01003 (United States); Xiao, Xianghui [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States); Arwade, Sanjay R. [Department of Civil and Environmental Engineering, University of Massachusetts Amherst, Amherst, MA 01003 (United States); Zhang, Guoping, E-mail: zhangg@umass.edu [Department of Civil and Environmental Engineering, University of Massachusetts Amherst, Amherst, MA 01003 (United States)

2017-03-14

Knowledge of the mechanical properties of porous metallic hollow spheres (MHS) thin wall is of key importance for understanding the engineering performance of both individual ultralight MHS and the innovative MHS-based bulk foams. This paper presents the first integrated experimental and numerical study to determine the elasticity and yielding of the porous MHS wall and their dependence on its microporosity. Nanoindentation was used to probe the Young's modulus and hardness of the nonporous MHS wall material, and synchrotron X-ray computed tomography (XCT) conducted to obtain its porous microstructure and pore morphology. Three-dimensional finite element modeling was performed to obtain the mechanical response of microcubes with varying porosity trimmed from the XCT-derived real digital model of the porous MHS wall. Results show that both the Young's modulus and yield strength of the porous wall decrease nonlinearly with increasing porosity, and their relationships follow the same format of a power law function and agree well with prior experimental results. The empirical relations also reflect certain features of pore morphology, such as pore connectivity and shape. These findings can shed lights on the design, manufacturing, and modeling of individual MHS and MHS-based foams.

A novel enzymatic glucose sensor based on Pt nanoparticles-decorated hollow carbon spheres-modified glassy carbon electrode

Science.gov (United States)

Luhana, Charles; Bo, Xiang-Jie; Ju, Jian; Guo, Li-Ping

2012-10-01

A new glucose biosensor was developed based on hollow carbon spheres decorated with platinum nanoparticles (Pt/HCSs)-modified glassy carbon electrode immobilized with glucose oxidase (GOx) with the help of Nafion. The Pt nanoparticles were well dispersed on the HCSs with an average size of 2.29 nm. The detection of glucose was achieved via electrochemical detection of the enzymatically liberated H2O2 at +0.5 V versus Ag/AgCl at physiologic pH of 7.4. The Pt/HCSs-modified electrode exhibited excellent electrocatalytic activities toward both the oxidation and reduction of H2O2. The glucose biosensor showed good electrocatalytic performance in terms of high sensitivity (4.1 μA mM-1), low detection limit (1.8 μM), fast response time tested with this biosensor and a good recovery was achieved for the two spiked serum samples.

Synthesis of CdS hollow/solid nanospheres and their chain-structures by membrane technique

International Nuclear Information System (INIS)

Duan Shumin; Wu Qingsheng; Jia Runping; Liu Xinbo

2008-01-01

CdS hollow/solid nanospheres and their chain-structures were successfully synthesized through supporting liquid membrane (SLM) system with bio-membrane. X-ray powder diffraction (XRD), transmission electron microscopy (TEM), UV-Vis spectroscopy, and photoluminescence (PL) spectroscopy have been used for the characterization of the products. The average diameters of CdS solid/hollow spheres are about 10, 40 nm, respectively. The wall of the hollow spheres is about 5 nm. CdS products are all cubic face-centered structure with the cell constant a = 5.830 A. We also explore the morphology, structure and possible synthesis mechanism. A possible template mechanism has been proposed for the production of the hollow CdS nanocrystals, that is, CdS nanoparticles grow along the non-soakage interface between CHCl3 and reactant solution. During this process, the organic functional groups were crucial to the control of crystal morphologies

Synthesis and characterization of hollow magnetic nanospheres modified with Au nanoparticles for bio-encapsulation

Energy Technology Data Exchange (ETDEWEB)

Seisno, Satoshi, E-mail: seino@mit.eng.osaka-u.ac.jp; Suga, Kent; Nakagawa, Takashi; Yamamoto, Takao A.

2017-04-01

Hollow magnetic nanospheres modified with Au nanoparticles were successfully synthesized. Au/SiO{sub 2} nanospheres fabricated by a radiochemical process were used as templates for ferrite templating. After the ferrite plating process, Au/SiO{sub 2} templates were fully coated with magnetite nanoparticles. Dissolution of the SiO{sub 2} core lead to the formation of hollow magnetic nanospheres with Au nanoparticles inside. The hollow magnetic nanospheres consisted of Fe{sub 3}O{sub 4} grains, with an average diameter of 60 nm, connected to form the sphere wall, inside which Au grains with an average diameter of 7.2 nm were encapsulated. The Au nanoparticles immobilized on the SiO{sub 2} templates contributed to the adsorption of the Fe ion precursor and/or Fe{sub 3}O{sub 4} seeds. These hollow magnetic nanospheres are proposed as a new type of nanocarrier, as the Au grains could specifically immobilize biomolecules inside the hollow sphere. - Highlights: • A procedure to synthesize hollow magnetic nanospheres with Au inside was reported. • The Au nanoparticles inside the hollow showed high Au-S binding affinity. • The nanospheres are expected to be suitable as a new magnetic carrier for DDS.

Ultrasonic/surfactant assisted of CdS nano hollow sphere synthesis and characterization

International Nuclear Information System (INIS)

Rafati, Amir Abbas; Borujeni, Ahmad Reza Afraz; Najafi, Mojgan; Bagheri, Ahmad

2011-01-01

CdS hollow nanospheres with diameters ranging from 40 to 150 nm have been synthesized by a surfactant-assisted sonochemical route. The successful vesicle templating indicates that the outer leaflet of the bilayer is the receptive surface in the controlled growth of CdS nanoparticles which provide the unique reactor for the nucleation and mineralization growth of CdS nanoparticles. The CdS nanostructures obtained were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, ultraviolet-visible spectroscopy and photoluminescence spectroscopy. Structural characterization of hollow CdS nanospheres indicates that these products packed with square subunits having sizes between 5 and 7 nm in diameter. The formation of the hollow nanostructure was explained by a vesicle template mechanism, in which sonication and surfactant play important roles. The band-edge emission and surface luminescence of the CdS nanoparticles were observed. -Research Highlights: → CdS hollow nanospheres with diameters of 40-150 nm were synthesized. → Nanoparticles were characterized by UV/Vis and photoluminescence. → Nanospheres are composed of smaller nanocrystals with the average size of 6.8 nm. → The band gap energy of the CdS nanoparticles is higher than its bulk value.

Ag/α-Fe{sub 2}O{sub 3} hollow microspheres: Preparation and application for hydrogen peroxide detection

Energy Technology Data Exchange (ETDEWEB)

Kang, Xinyuan; Wu, Zhiping; Liao, Fang, E-mail: liaozhang2003@163.com; Zhang, Tingting; Guo, Tingting

2015-09-15

In this paper, we demonstrated a simple approach for preparing α-Fe{sub 2}O{sub 3} hollow spheres by mixing ferric nitrate aqueous and glucose in 180 °C. The glucose was found to act as a soft template in the process of α-Fe{sub 2}O{sub 3} hollow spheres formation. Ag/α-Fe{sub 2}O{sub 3} hollow nanocomposite was obtained under UV irradiation without additional reducing agents or initiators. Synthesized Ag/α-Fe{sub 2}O{sub 3} hollow composites exhibited remarkable catalytic performance toward H{sub 2}O{sub 2} reduction. The electrocatalytic activity mechanism of Ag/α-Fe{sub 2}O{sub 3}/GCE were discussed toward the reduction of H{sub 2}O{sub 2} in this paper. - Graphical abstract: Glucose is carbonized as carbon balls in the 180 °C hydrothermal carbonization process, which plays a role of a soft template. Carbon spherical shell is rich in many hydroxyls, which have good hydrophilicity and surface reactivity. When Fe(NO{sub 3}){sub 3} is added to the aqueous solution of Glucose, the hydrophilic -OH will adsorb Fe{sup 3+} to form coordination compound by coordination bond. α-FeOOH is formed on the surface of carbon balls by hydrothermal reaction. After calcination at 500 °C, carbon spheres react with oxygen to form carbon dioxide, which disappears in the air. Meanwhile α-FeOOH is calcined to form α-Fe{sub 2}O{sub 3} hollow spheres.

Fabrication of α-Fe{sub 2}O{sub 3}/TiO{sub 2} bi-functional composites with hierarchical and hollow structures and their application in water treatment

Energy Technology Data Exchange (ETDEWEB)

Li, Yinhui, E-mail: lillian09281@hotmail.com; Zhang, Na; Chen, Jianxin, E-mail: chjx2000@126.com; Li, Ruijuan; Li, Liang; Li, Kunyu [Hebei University of Technology, School of Marine Science and Engineering, Engineering Research Center of Seawater Utilization Technology, Ministry of Education (China)

2016-02-15

The α-Fe{sub 2}O{sub 3}/TiO{sub 2} bi-functional composites with hierarchical and hollow structures are fabricated through a hydrothermal route. The adsorption performance and photocatalytic activity of the composites towards Pb{sup 2+} are investigated in this work. Different adsorption kinetics models and equilibrium models are used to explore the adsorption behavior of hierarchical α-Fe{sub 2}O{sub 3}/TiO{sub 2} hollow spheres. Experimental data show that adsorption kinetics of the hierarchical α-Fe{sub 2}O{sub 3}/TiO{sub 2} hollow spheres can be fitted well by the pseudo-second-order model, while the isothermal data can be perfectly described by the Langmuir adsorption model. The maximum adsorption capacity of the hierarchical α-Fe{sub 2}O{sub 3}/TiO{sub 2} hollow spheres is 32.36 mg g{sup −1}. Moreover, the hierarchical α-Fe{sub 2}O{sub 3}/TiO{sub 2} hollow spheres possess photocatalytic oxidation character under simulated solar light irradiation. The results demonstrate that the hierarchical α-Fe{sub 2}O{sub 3}/TiO{sub 2} hollow spheres, as effective and cheap materials, can be applied to the removal of heavy metal ions from wastewater.

Shape evolution of new-phased lepidocrocite VOOH from single-shelled to double-shelled hollow nanospheres on the basis of programmed reaction-temperature strategy.

Science.gov (United States)

Wu, Changzheng; Zhang, Xiaodong; Ning, Bo; Yang, Jinlong; Xie, Yi

2009-07-06

Solid templates have been long regarded as one of the most promising ways to achieve single-shelled hollow nanostructures; however, few effective methods for the construction of multishelled hollow objects from their solid template counterparts have been developed. We report here, for the first time, a novel and convenient route to synthesizing double-shelled hollow spheres from the solid templates via programming the reaction-temperature procedures. The programmed temperature strategy developed in this work then provides an essential and general access to multishelled hollow nanostructures based on the designed extension of single-shelled hollow objects, independent of their outside contours, such as tubes, hollow spheres, and cubes. Starting from the V(OH)(2)NH(2) solid templates, we show that the relationship between the hollowing rate and the reaction temperature obey the Van't Hoff rule and Arrhenius activation-energy equation, revealing that it is the chemical reaction rather than the diffusion process that guided the whole hollowing process, despite the fact that the coupled reaction/diffusion process is involved in the hollowing process. Using the double-shelled hollow spheres as the PCM (CaCl(2).6H(2)O) matrix grants much better thermal-storage stability than that for the nanoparticles counterpart, revealing that the designed nanostructures can give rise to significant improvements for the energy-saving performance in future "smart house" systems.

Real-Time Fluorescence Detection in Aqueous Systems by Combined and Enhanced Photonic and Surface Effects in Patterned Hollow Sphere Colloidal Photonic Crystals.

Science.gov (United States)

Zhong, Kuo; Wang, Ling; Li, Jiaqi; Van Cleuvenbergen, Stijn; Bartic, Carmen; Song, Kai; Clays, Koen

2017-05-16

Hollow sphere colloidal photonic crystals (HSCPCs) exhibit the ability to maintain a high refractive index contrast after infiltration of water, leading to extremely high-quality photonic band gap effects, even in an aqueous (physiological) environment. Superhydrophilic pinning centers in a superhydrophobic environment can be used to strongly confine and concentrate water-soluble analytes. We report a strategy to realize real-time ultrasensitive fluorescence detection in patterned HSCPCs based on strongly enhanced fluorescence due to the photonic band-edge effect combined with wettability differentiation in the superhydrophobic/superhydrophilic pattern. The orthogonal nature of the two strategies allows for a multiplicative effect, resulting in an increase of two orders of magnitude in fluorescence.

Size- and shape-controlled synthesis of hexagonal bipyramidal crystals and hollow self-assembled Al-MOF spheres

KAUST Repository

Sarawade, Pradip; Tan, Hua; Anjum, Dalaver H.; Cha, Dong Kyu; Polshettiwar, Vivek

2013-01-01

We report an efficient protocol for the synthesis of monodisperse crystals of an aluminum (Al)-based metal organic framework (MOF) while obtaining excellent control over the size and shape solely by tuning of the reaction parameters without the use of a template or structure-directing agent. The size of the hexagonal crystals of the Al-MOF can be selectively varied from 100 nm to 2000 nm by simply changing the reaction time and temperature via its nucleation-growth mechanism. We also report a self-assembly phenomenon, observed for the first time in case of Al-MOF, whereby hollow spheres of Al-MOF were formed by the spontaneous organization of triangular sheet building blocks. These MOFs showed broad hysteresis loops during the CO2 capture, indicating that the adsorbed CO2 is not immediately desorbed upon decreasing the external pressure and is instead confined within the framework, which allows for the capture and subsequent selective trapping of CO2 from gaseous mixtures. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Size- and shape-controlled synthesis of hexagonal bipyramidal crystals and hollow self-assembled Al-MOF spheres

KAUST Repository

Sarawade, Pradip

2013-11-25

We report an efficient protocol for the synthesis of monodisperse crystals of an aluminum (Al)-based metal organic framework (MOF) while obtaining excellent control over the size and shape solely by tuning of the reaction parameters without the use of a template or structure-directing agent. The size of the hexagonal crystals of the Al-MOF can be selectively varied from 100 nm to 2000 nm by simply changing the reaction time and temperature via its nucleation-growth mechanism. We also report a self-assembly phenomenon, observed for the first time in case of Al-MOF, whereby hollow spheres of Al-MOF were formed by the spontaneous organization of triangular sheet building blocks. These MOFs showed broad hysteresis loops during the CO2 capture, indicating that the adsorbed CO2 is not immediately desorbed upon decreasing the external pressure and is instead confined within the framework, which allows for the capture and subsequent selective trapping of CO2 from gaseous mixtures. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced electrochemical performance of different morphological C/LiMnPO4 nanoparticles from hollow-sphere Li3PO4 precursor via a delicate polyol-assisted hydrothermal method

Science.gov (United States)

Cui, Yu-Ting; Xu, Ning; Kou, Li-Qin; Wu, Meng-Tao; Chen, Li

2014-03-01

With the hollow-sphere Li3PO4 as precursor, a delicate polyol-assisted hydrothermal method is devised to synthesize high-performance LiMnPO4. Orthorhombic shaped, irregular flaky shaped and sphere-like LiMnPO4 are sequentially prepared by decreasing the water-diethylene glycol (DEG) ratio. The capacity, cycling stability and rate performance of all samples prepared by the new synthesis method are improved significantly. And the C/LiMnPO4 with irregular flaky shape exhibits a capacity of 154.1 mA h g-1 at C/20, 147.4 mA h g-1 at C/10 and 102.5 mA h g-1 at 2 C, which is the best performance ever reported for LiMnPO4 active material with similar carbon additives.

Scattering characteristics of relativistically moving concentrically layered spheres

Science.gov (United States)

Garner, Timothy J.; Lakhtakia, Akhlesh; Breakall, James K.; Bohren, Craig F.

2018-02-01

The energy extinction cross section of a concentrically layered sphere varies with velocity as the Doppler shift moves the spectral content of the incident signal in the sphere's co-moving inertial reference frame toward or away from resonances of the sphere. Computations for hollow gold nanospheres show that the energy extinction cross section is high when the Doppler shift moves the incident signal's spectral content in the co-moving frame near the wavelength of the sphere's localized surface plasmon resonance. The energy extinction cross section of a three-layer sphere consisting of an olivine-silicate core surrounded by a porous and a magnetite layer, which is used to explain extinction caused by interstellar dust, also depends strongly on velocity. For this sphere, computations show that the energy extinction cross section is high when the Doppler shift moves the spectral content of the incident signal near either of olivine-silicate's two localized surface phonon resonances at 9.7 μm and 18 μm.

Preparation of hollow mesoporous carbon spheres and their performances for electrochemical applications

Science.gov (United States)

Ariyanto, T.; Zhang, G. R.; Kern, A.; Etzold, B. J. M.

2018-03-01

Hollow carbon materials have received intensive attention for energy storage/conversion applications due to their attractive properties of high conductivity, high surface area, large void and short diffusion pathway. In this work, a novel hollow mesoporous material based on carbide-derived carbon (CDC) is presented. CDC is a new class of carbon material synthesized by the selective extraction of metals from metal carbides. With a two-stage extraction procedure of carbides with chlorine, firstly hybrid core-shell carbon particles were synthesized, i.e. mesoporous/graphitic carbon shells covering microporous/amorphous carbon cores. The amorphous cores were then selectively removed from particles by a careful oxidative treatment utilizing its low thermal characters while the more stable carbon shells remained, thus resulting hollow particles. The characterization methods (e.g. N2 sorption, Raman spectroscopy, temperature-programmed oxidation and SEM) proved the successful synthesis of the aspired material. In electric double-layer capacitor (EDLC) testing, this novel hollow core material showed a remarkable enhancement of EDLC’s rate handling ability (75% at a high scan rate) with respect to an entirely solid-mesoporous material. Furthermore, as a fuel cell catalyst support the material showed higher Pt mass activity (a factor of 1.8) compared to a conventional carbon support for methanol oxidation without noticeably decreasing activity in a long-term testing. Therefore, this carbon nanostructure shows great promises as efficient electrode materials for energy storage and conversion systems.

An ultrasensitive hollow-silica-based biosensor for pathogenic Escherichia coli DNA detection.

Science.gov (United States)

Ariffin, Eda Yuhana; Lee, Yook Heng; Futra, Dedi; Tan, Ling Ling; Karim, Nurul Huda Abd; Ibrahim, Nik Nuraznida Nik; Ahmad, Asmat

2018-03-01

A novel electrochemical DNA biosensor for ultrasensitive and selective quantitation of Escherichia coli DNA based on aminated hollow silica spheres (HSiSs) has been successfully developed. The HSiSs were synthesized with facile sonication and heating techniques. The HSiSs have an inner and an outer surface for DNA immobilization sites after they have been functionalized with 3-aminopropyltriethoxysilane. From field emission scanning electron microscopy images, the presence of pores was confirmed in the functionalized HSiSs. Furthermore, Brunauer-Emmett-Teller (BET) analysis indicated that the HSiSs have four times more surface area than silica spheres that have no pores. These aminated HSiSs were deposited onto a screen-printed carbon paste electrode containing a layer of gold nanoparticles (AuNPs) to form a AuNP/HSiS hybrid sensor membrane matrix. Aminated DNA probes were grafted onto the AuNP/HSiS-modified screen-printed electrode via imine covalent bonds with use of glutaraldehyde cross-linker. The DNA hybridization reaction was studied by differential pulse voltammetry using an anthraquinone redox intercalator as the electroactive DNA hybridization label. The DNA biosensor demonstrated a linear response over a wide target sequence concentration range of 1.0×10 -12 -1.0×10 -2 μM, with a low detection limit of 8.17×10 -14 μM (R 2 = 0.99). The improved performance of the DNA biosensor appeared to be due to the hollow structure and rough surface morphology of the hollow silica particles, which greatly increased the total binding surface area for high DNA loading capacity. The HSiSs also facilitated molecule diffusion through the silica hollow structure, and substantially improved the overall DNA hybridization assay. Graphical abstract Step-by-step DNA biosensor fabrication based on aminated hollow silica spheres.

Hollow magnetic nano-CO3O4/polystyrene microspheres synthesized through radiation induced interfacial polymerization

International Nuclear Information System (INIS)

Zhang Wei; Wang Mozhen; Wang Shufeng; Zhang Zhicheng

2010-01-01

Co 3 O 4 nanoparticles (around 8 nm) were synthesized hydrothermally by dissolving Co 2+ in the mixture of ethanol and water, and then decorated with oleic acid to endow them with hydrophobic surface nature. After that, nano-particles were added into emulsion which consisted by sodium dodecyl sulfate, water, styrene and cetyl alcohol. Hollow magnetic composite spheres were prepared by irradiated the emulsion with γ-rays. The final products are thoroughly characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), field-emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) techniques, which showed the formation of hollow magnetic composite spheres. The influence of addition dosage of nano-particles, sodium dodecyl sulfate and the types of nano-particles on the average size and shape of hollow composites were studied. The effects of nano-particles to the polymerization of styrene were studied by kinetics. Nano-particles are capsulated by polystyrene to form hollow composites, which confirmed by XPS results. Finally, magnetic property of hollow composites is compared with pure nano-Co 3 O 4 . (authors)

Rational synthesis of graphene-encapsulated uniform MnMoO4 hollow spheres as long-life and high-rate anodes for lithium-ion batteries.

Science.gov (United States)

Wei, Huaixin; Yang, Jun; Zhang, Yufei; Qian, Yong; Geng, Hongbo

2018-03-29

In this manuscript, the graphene-encapsulated MnMoO 4 hollow spheres (MnMoO 4 @G) synthesized by an effective strategy were reported. Benefiting from the intriguing hybrid architecture of hollow structure and conductive graphene network, the MnMoO 4 @G composite displays superior electrochemical performance with high specific capacity of 1142 mA h g -1 , high reversible cycling stability of 921 mA h g -1 at a current density of 100 mA g -1 after 70 cycles, and stable rate performance (around 513 mA h g -1 at a current density of 4.0 A g -1 ). The remarkable battery performance can be attributed to the rational design of the architecture, which not only ensures the fast transport of electrons and lithium ions within the electrode material, but also effectively relax the stress induced by the insertion/extraction of lithium ions. This facile synthetic method can extend to other transition metal oxides with large volume excursions and poor electric conductivity and promotes the development of transition metal oxides as high-performance LIB anode material. Copyright © 2018 Elsevier Inc. All rights reserved.

Optimization of the Photoanode of CdS Quantum Dot-Sensitized Solar Cells Using Light-Scattering TiO2 Hollow Spheres

Science.gov (United States)

Marandi, Maziar; Rahmani, Elham; Ahangarani Farahani, Farzaneh

2017-12-01

CdS quantum dot-sensitized solar cells (QDSCs) have been fabricated and their photoanode optimized by altering the thickness of the photoelectrode and CdS deposition conditions and applying a ZnS electron-blocking layer and TiO2 hollow spheres. Hydrothermally grown TiO2 nanocrystals (NCs) with dominant size of 20 nm were deposited as a sublayer in the photoanode with thickness in the range from 5 μm to 10 μm using a successive ionic layer adsorption and reaction (SILAR) method. The number of deposition cycles was altered over a wide range to obtain optimized sensitization. Photoanode thickness and number of CdS sensitization cycles around the optimum values were selected and used for ZnS deposition. ZnS overlayers were also deposited on the surface of the photoanodes using different numbers of cycles of the SILAR process. The best QDSC with the optimized photoelectrode demonstrated a 153% increase in efficiency compared with a similar cell with ZnS-free photoanode. Such bilayer photoelectrodes were also fabricated with different thicknesses of TiO2 sublayers and one overlayer of TiO2 hollow spheres (HSs) with external diameter of 500 nm fabricated by liquid-phase deposition with carbon spheres as template. The optimization was performed by changing the photoanode thickness using a wide range of CdS sensitizing cycles. The maximum energy conversion efficiency was increased by about 77% compared with a similar cell with HS-free photoelectrode. The reason was considered to be the longer path length of the incident light inside the photoanode and greater light absorption. A ZnS blocking layer was overcoated on the surface of the bilayer photoanode with optimized thickness. The number of CdS sensitization cycles was also changed around the optimized value to obtain the best QDSC performance. The number of ZnS deposition cycles was also altered in a wide range for optimization of the photovoltaic performance. It was shown that the maximum efficiency was increased by

Instantaneous, Simple, and Reversible Revealing of Invisible Patterns Encrypted in Robust Hollow Sphere Colloidal Photonic Crystals.

Science.gov (United States)

Zhong, Kuo; Li, Jiaqi; Liu, Liwang; Van Cleuvenbergen, Stijn; Song, Kai; Clays, Koen

2018-05-04

The colors of photonic crystals are based on their periodic crystalline structure. They show clear advantages over conventional chromophores for many applications, mainly due to their anti-photobleaching and responsiveness to stimuli. More specifically, combining colloidal photonic crystals and invisible patterns is important in steganography and watermarking for anticounterfeiting applications. Here a convenient way to imprint robust invisible patterns in colloidal crystals of hollow silica spheres is presented. While these patterns remain invisible under static environmental humidity, even up to near 100% relative humidity, they are unveiled immediately (≈100 ms) and fully reversibly by dynamic humid flow, e.g., human breath. They reveal themselves due to the extreme wettability of the patterned (etched) regions, as confirmed by contact angle measurements. The liquid surface tension threshold to induce wetting (revealing the imprinted invisible images) is evaluated by thermodynamic predictions and subsequently verified by exposure to various vapors with different surface tension. The color of the patterned regions is furthermore independently tuned by vapors with different refractive indices. Such a system can play a key role in applications such as anticounterfeiting, identification, and vapor sensing. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hollow mesoporous carbon spheres-based fiber coating for solid-phase microextraction of polycyclic aromatic hydrocarbons.

Science.gov (United States)

Hu, Xingru; Liu, Chao; Li, Jiansheng; Luo, Rui; Jiang, Hui; Sun, Xiuyun; Shen, Jinyou; Han, Weiqing; Wang, Lianjun

2017-10-20

In this study, a novel hollow mesoporous carbon spheres-based fiber (HMCSs-F) was fabricated to immobilize HMCSs onto a stainless steel wire for solid-phase microextraction (SPME). Characterization results showed that the HMCSs-F possessed a large specific surface area, high porosity and uniform pore size. To demonstrate the extraction performance, a series of polycyclic aromatic hydrocarbons (PAHs) was chosen as target analytes. The experimental parameters including extraction and desorption conditions were optimized. Compared to commercial fibers, the HMCSs-F exhibited better extraction efficiency for PAHs. More interestingly, a good extraction selectivity for PAHs from the complex matrix was observed in these HMCSs-F. The enhanced SPME performance was attributed to the unique pore structure and special surface properties of the HMCSs. Furthermore, under the optimum conditions, the limits of detection (LODs) for the HMCSs-F were in the range of 0.20-1.15ngL -1 with a corresponding relative standard deviation that was below 8.6%. The method was successfully applied for the analysis of PAHs in actual environmental water samples with recoveries ranging from 85.9% to 112.2%. These results imply that the novel HMCSs-F have potential application in environmental water analysis. Copyright © 2017 Elsevier B.V. All rights reserved.

Determination of elastic modulus for hollow spherical shells via resonant ultrasound spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ma, Xiaojun [Institute of Modern Physics, Fudan University, Shanghai 200433 (China); Research Center of Laser Fusion, CAEP, Mianyang 621900 (China); Tang, Xing; Wang, Zongwei [Research Center of Laser Fusion, CAEP, Mianyang 621900 (China); Chen, Qian; Qian, Menglu [Institute of Acoustic, Tongji University, Shanghai 200092 (China); Meng, Jie [Research Center of Laser Fusion, CAEP, Mianyang 621900 (China); Tang, Yongjian [Institute of Modern Physics, Fudan University, Shanghai 200433 (China); Research Center of Laser Fusion, CAEP, Mianyang 621900 (China); Shen, Hao [Institute of Modern Physics, Fudan University, Shanghai 200433 (China); Gao, Dangzhong, E-mail: dgaocn@163.com [Research Center of Laser Fusion, CAEP, Mianyang 621900 (China)

2017-04-15

Highlights: • The axisymmetric frequency equation of an isotropic hollow two-layer sphere is deduced by three dimension elasticity theory and global matrix method. • The simulated results demonstrate that the natural frequencies of a hollow sphere are more strongly dependent on Young’s modulus than Poisson's ratio. • The Young’s moduli of polymer capsules with an sub-millimeter inner radius are measured accurately with an uncertainty of ∼10%. - Abstract: The elastic property of a capsule is one of the essential parameters both in engineering applications and scientific understanding of material nature in inertial confinement fusion (ICF) experiments. The axisymmetric frequency equation of an isotropic hollow two-layer sphere is deduced by three dimension elasticity theory and global matrix method, and a combined resonant ultrasound spectroscopy(RUS), which consists of a piezoelectric-based resonant ultrasound spectroscopy(PZT-RUS) and a laser-based resonant ultrasound spectroscopy(LRUS), is developed for determining the elastic modulus of capsule. To understand the behavior of natural frequencies varying with elastic properties, the dependence of natural frequencies on Young’s modulus and Poisson’s ratio are calculated numerically. Some representative polymer capsules are measured using PZT-RUS and LRUS. Based on the theoretical and experimental results, the Young’s moduli of these capsules are measured accurately with an uncertainty of ∼10%.

Synthesis, morphological control, and antibacterial properties of hollow/solid Ag2S/Ag heterodimers

KAUST Repository

Pang, Maolin

2010-08-11

Ag2S and Ag are important functional materials that have received considerable research interest in recent years. In this work, we develop a solution-based synthetic method to combine these two materials into hollow/solid Ag2S/Ag heterodimers at room temperature. Starting from monodisperse Cu2O solid spheres, CuS hollow spheres can be converted from Cu2O through a modified Kirkendall process, and the obtained CuS can then be used as a solid precursor for preparation of the Ag2S/Ag heterodimers through ion exchange and photo-assisted reduction. We have found that formation of the Ag2S/Ag heterodimers is instantaneous, and the size of Ag nanocrystals on the hollow spheres of Ag2S can be controlled by changing the concentration and power of reducing agents in the synthesis. The growth of Ag nanoparticles on hollow spheres of Ag2S in the dimers is along the [111] direction of the silver crystal; the light absorption properties have also been investigated. Furthermore, coupling or tripling of Ag2S/Ag heterodimers into dumbbell-like trimers ((Ag 2S)2/Ag, linear) and triangular tetramers ((Ag 2S)3/Ag, coplanar) can also be attained at 60°C by adding the bidentate ligand ethylenediamine as a cross-linking agent. To test the applicability of this highly asymmetric dipolar composite, photocatalytic inactivation of Escherichia coli K-12 in the presence of the as-prepared Ag 2S/Ag heterodimers has been carried out under UV irradiation. The added Ag2S/Ag heterodimers show good chemical stability under prolonged UV irradiation, and no appreciable solid dissolution is found. Possible mechanisms regarding the enhanced antibacterial activity have also been addressed. © 2010 American Chemical Society.

Remarkable activity of nitrogen-doped hollow carbon spheres encapsulated Cu on synthesis of dimethyl carbonate: Role of effective nitrogen

Science.gov (United States)

Li, Haixia; Zhao, Jinxian; Shi, Ruina; Hao, Panpan; Liu, Shusen; Li, Zhong; Ren, Jun

2018-04-01

A critical aspect in the improvement of the catalytic performance of Cu-based catalysts for the synthesis of dimethyl carbonate (DMC) is the development of an appropriate support. In this work, nitrogen-doped hollow carbon spheres (NHCSs), with 240 nm average diameter, 17 nm shell thickness, uniform mesoporous structure and a specific surface area of 611 m2 g-1, were prepared via a two-step Stӧber method. By varying the quantity of nitrogen-containing phenols used in the preparation it has been possible to control the nitrogen content and, consequently, the sphericity of the NHCSs. It was found that perfect spheres were obtained for nitrogen contents below 5.4 wt.%. The catalysts (Cu@NHCSs) were prepared by the hydrothermal impregnation method. The catalytic activity towards DMC synthesis was notably enhanced due to the immobilization effect on Cu particles and the enhanced electron transfer effect exercised by the effective nitrogen species, including pyridinic-N and graphitic-N. When the average size of the copper nanoparticles was 7.4 nm and the nitrogen content was 4.0 wt.%, the values of space-time yield of DMC and of turnover frequency (TOF) reached 1528 mg/(g h) and 11.0 h-1, respectively. The TOF value of Cu@NHCSs was 6 times higher than non-doped Cu@Carbon (2.1 h-1). The present work introduces the potential application of nitrogen-doped carbon materials and presents a novel procedure for the preparation of catalysts for DMC synthesis.

Microwave-Assisted Synthesis of NiCo2O4 Double-Shelled Hollow Spheres for High-Performance Sodium Ion Batteries

Science.gov (United States)

Zhang, Xiong; Zhou, Yanping; Luo, Bin; Zhu, Huacheng; Chu, Wei; Huang, Kama

2018-03-01

The ternary transitional metal oxide NiCo2O4 is a promising anode material for sodium ion batteries due to its high theoretical capacity and superior electrical conductivity. However, its sodium storage capability is severely limited by the sluggish sodiation/desodiation reaction kinetics. Herein, NiCo2O4 double-shelled hollow spheres were synthesized via a microwave-assisted, fast solvothermal synthetic procedure in a mixture of isopropanol and glycerol, followed by annealing. Isopropanol played a vital role in the precipitation of nickel and cobalt, and the shrinkage of the glycerol quasi-emulsion under heat treatment was responsible for the formation of the double-shelled nanostructure. The as-synthesized product was tested as an anode material in a sodium ion battery, was found to exhibit a high reversible specific capacity of 511 mAh g-1 at 100 mA g-1, and deliver high capacity retention after 100 cycles. [Figure not available: see fulltext.

Enhanced microwave absorption performance of lightweight absorber based on reduced graphene oxide and Ag-coated hollow glass spheres/epoxy composite

International Nuclear Information System (INIS)

Wang, Junpeng; Sun, Yu; Chen, Wei; Wang, Tao; Xu, Renxin; Wang, Jun

2015-01-01

Using a combination of Ag-coated hollow glass spheres (HGS@Ag) and a small quantity of graphene sheets within the epoxy matrix, we have prepared a novel lightweight high efficiency microwave absorption composite. Compared with pure HGS@Ag and graphene composite, the −10 dB absorption bandwidth and the minimum reflection loss of the novel composite are improved. Reflection loss exceeding −20 dB is obtained for composites in a wide frequency range and the minimum reflection loss reaches −46 dB while bandwidth less than −10 dB can reach up to 4.1 GHz when an appropriate absorber thickness between 2 and 3.5 mm is chosen. The enhanced microwave absorption performance of the novel composite is due to the enhanced dielectric response, enhanced conductivity, and the trap of electromagnetic radiation with increased propagation paths by multiple reflections

Ultrathin-shell boron nitride hollow spheres as sorbent for dispersive solid-phase extraction of polychlorinated biphenyls from environmental water samples.

Science.gov (United States)

Fu, Meizhen; Xing, Hanzhu; Chen, Xiangfeng; Chen, Fan; Wu, Chi-Man Lawrence; Zhao, Rusong; Cheng, Chuange

2014-11-21

Boron nitride hollow spheres with ultrathin-shells were synthesized and used as sorbents for dispersive solid-phase extraction of aromatic pollutants at trace levels from environmental water samples. Polychlorinated biphenyls (PCBs) were selected as target compounds. Sample quantification and detection were performed by gas chromatography-tandem mass spectrometry. Extraction parameters influencing the extraction efficiency were optimized through response surface methodology using the Box-Behnken design. The proposed method achieved good linearity within the concentration range of 0.15-250 ng L(-1) PCBs, low limits of detection (0.04-0.09 ng L(-1), S/N=3:1), good repeatability of the extractions (relative standard deviation, spring waters were analyzed using the developed method. Results demonstrated that the hexagonal boron nitride-based material has significant potential as a sorbent for organic pollutant extraction from environmental water samples. Copyright © 2014 Elsevier B.V. All rights reserved.

Superconducting Sphere in an External Magnetic Field Revisited

Science.gov (United States)

Sazonov, Sergey N.

2013-01-01

The purpose of this article is to give the intelligible procedure for undergraduate students to grasp proof of the fact that the magnetic field outside the hollow superconducting sphere (superconducting shell) coincides with the field of a point magnetic dipole both when an uniform external magnetic field is applied as when a ferromagnetic sphere…

Hollow Nanospheres Array Fabrication via Nano-Conglutination Technology.

Science.gov (United States)

Zhang, Man; Deng, Qiling; Xia, Liangping; Shi, Lifang; Cao, Axiu; Pang, Hui; Hu, Song

2015-09-01

Hollow nanospheres array is a special nanostructure with great applications in photonics, electronics and biochemistry. The nanofabrication technique with high resolution is crucial to nanosciences and nano-technology. This paper presents a novel nonconventional nano-conglutination technology combining polystyrenes spheres (PSs) self-assembly, conglutination and a lift-off process to fabricate the hollow nanospheres array with nanoholes. A self-assembly monolayer of PSs was stuck off from the quartz wafer by the thiol-ene adhesive material, and then the PSs was removed via a lift-off process and the hollow nanospheres embedded into the thiol-ene substrate was obtained. Thiolene polymer is a UV-curable material via "click chemistry" reaction at ambient conditions without the oxygen inhibition, which has excellent chemical and physical properties to be attractive as the adhesive material in nano-conglutination technology. Using the technique, a hollow nanospheres array with the nanoholes at the diameter of 200 nm embedded into the rigid thiol-ene substrate was fabricated, which has great potential to serve as a reaction container, catalyst and surface enhanced Raman scattering substrate.

Synthesis and characterizations of spherical hollow composed of AgI nanoparticle using AgBr as the precursor

International Nuclear Information System (INIS)

Yang Ming; Zhou Kui

2011-01-01

Hollow spheres of AgI with an average radius of 100-200 nm have been prepared by a simple reaction between AgBr suspension and KI in the presence of gelatin. Gelatin played a decisive role as an inhibitor of the direct attack of I - ions to AgBr surfaces and coagulation of the growing AgI in producing the spherical AgI particles. The products were characterized by X-ray powder diffraction, transmission electron microscopy, UV-vis absorption spectroscopy and X-ray photoelectron spectra techniques. The band gaps are estimated to be 2.95 eV according to the results of optical measurements of the hollow spheres of AgI.

Adsorption and magnetic removal of neutral red dye from aqueous solution using Fe3O4 hollow nanospheres

International Nuclear Information System (INIS)

Iram, Mahmood; Guo, Chen; Guan Yueping; Ishfaq, Ahmad; Liu Huizhou

2010-01-01

Fe 3 O 4 hollow nanospheres were prepared via a simple one-pot template-free hydrothermal method and were fully characterized. These magnetic spheres have been investigated for application as an adsorbant for the removal of dye contaminants from water. Because of the high specific surface area, nano-scale particle size, and hollow porous material, Fe 3 O 4 hollow spheres showed favorable adsorption behavior for Neutral red. Factors affecting adsorption, such as, initial dye concentration, pH and contact time were evaluated. Langmuir and the Freundlich adsorption isotherms were selected to explicate the interaction of the dye and magnetic adsorbant. The characteristic parameters for each isotherm have been determined. The overall trend followed an increase of the sorption capacity with increasing dye concentration with a maximum of 90% dye removal. The monolayer adsorption capacity of magnetic hollow spheres (0.05 g) for NR in the concentration range studied, as calculated from the Langmuir isotherm model at 25 deg. C and pH 6, was found to be 105 mg g -1 . Adsorption kinetic followed pseudo-second-order reaction kinetics. Thermodynamic study showed that the adsorption processes are spontaneous and endothermic. The combination of the superior adsorption and the magnetic properties of Fe 3 O 4 nanospheres can be useful as a powerful separation tool to deal with environmental pollution.

Fabrication of Pt/Au concentric spheres from triblock copolymer.

Science.gov (United States)

Koh, Haeng-Deog; Park, Soojin; Russell, Thomas P

2010-02-23

Dispersion of an aqueous H(2)PtCl(6) solution into a trifluorotoluene (TFT) solution of a polystyrene-block-poly(2-vinylpyridine)-block-poly(ethylene oxide) (PS-b-P2VP-b-PEO) triblock copolymer produced an emulsion-induced hollow micelle (EIHM), comprising a water nanodroplet stabilized by PEO, H(2)PtCl(6)/P2VP, and PS, sequentially. The following addition of an aqueous LiAuCl(4) solution into the dispersion led to a coordination of LiAuCl(4) and PEO. The resulting spherical EIHM structure was transformed to a hollow cylindrical micelle by the fusion of spherical EIHM with the addition of methanol. This structural transition was reversible by the alternative addition of methanol and TFT. Oxygen plasma was used to generate Pt/Au concentric spheres and hollow cylindrical Pt/Au nano-objects.

Radioactive spheres without inactive wall for lesion simulation in PET

International Nuclear Information System (INIS)

Bazanez-Borgert, M.; Bundschuh, R.A.; Herz, M.; Martinez, M.J.; Schwaiger, M.; Ziegler, S.I.

2008-01-01

With the growing importance of PET and PET/CT in diagnosis, staging, therapy monitoring and radiotherapy planning, appropriate tools to simulate lesions in phantoms are important. Normally hollow spheres, made of plastic or glass, which can be filled with radioactive solutions, are used. As these spheres have an inactive wall they do not reflect the real situation in the patient and lead to quantification errors in the presence of background activity. We propose spheres made of radioactive wax, which are easy to produce, give a high flexibility to the user and a more accurate quantification. These wax spheres were evaluated for their applicability in PET phantoms and it was found that the activity is not diffusing into the surrounding water in relevant quantities, that they show a sufficient homogeneity, and that their attenuation properties are equivalent to water for photons of PET energies. Recovery coefficients for the wax spheres were measured and compared with those obtained for fillable plastic spheres for diameters of 28, 16, 10, and 6 mm in the presence of background activity. Recovery coefficients of the wax spheres were found to be up to 21% higher than for the fillable spheres. (orig.)

Urchin-like cobalt incorporated manganese oxide OMS-2 hollow spheres: Synthesis, characterization and catalytic degradation of RhB dye

Science.gov (United States)

Ahmed, Khalid Abdelazez Mohamed; Li, Buyi; Tan, Bien; Huang, Kaixun

2013-01-01

Urchin-like KxCoyMn8-yO16 hollow spheres assembled from nanoplate building blocks were successfully fabricated via a one-pot hydrothermal route using cobalt acetate and potassium permanganate as raw material. The products were characterized by powder X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectrometer, field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM) measurement. The thermal stability and surface areas of cobalt ion in the manganese sites of KMn8O16 structures were clearly evidenced by TGA and N2 adsorption-desorption isotherms curves. Based on time depended experiment results, a possible formation mechanism for this structures was proposed. The catalytic degradation of Rhodamine B (RhB) on KxCoyMn8-yO16 materials has, therefore been dependent for the molar precursor ratio and specific surface area of the as-fabricated products. UV-vis, LC-MS and barium hydroxide methods were utilized to monitor the temporal course of the catalytic reaction.

Facile synthesis of Co3O4 nanowires grown on hollow NiO microspheres with superior electrochemical performance

International Nuclear Information System (INIS)

Fan, Meiqing; Ren, Bo; Yu, Lei; Song, Dalei; Liu, Qi; Liu, Jingyuan; Wang, Jun; Jing, Xiaoyan; Liu, Lianhe

2015-01-01

Graphical abstract: Display Omitted - Highlights: • The NiO hollow spheres were decorated by Co 3 O 4 nanowires. • The NiO hollow spheres were comprised of many NiO particles. • The Co 3 O 4 nanowires were composed of nanoparticles. • The NiO/Co 3 O 4 core/shell nanocomposites have good electrochemical properties. - Abstract: The NiO/Co 3 O 4 core/shell composites as a promising supercapacitor material have been fabricated by facile hydrothermal process. The structure and morphology of the NiO/Co 3 O 4 core/shell composites were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results indicated that the NiO hollow spheres were decorated by Co 3 O 4 nanowires, and the nanowires were composed of nanoparticles. Electrochemical properties were characterized by cyclic voltammetry, galvanostatic charge/discharge measurements, and electrochemical impedance spectroscopy. The results suggested that the NiO/Co 3 O 4 core/shell composites had good electrochemical reversibility and displayed superior capacitive performance with large capacitance (510 F g −1 ). Moreover, NiO/Co 3 O 4 core/shell composites showed excellent cyclic performanceafter 1000 cycles

Photoluminescence enhancement from GaN by beryllium doping

Science.gov (United States)

García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

2016-10-01

High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

Fabrication of p-type porous GaN on silicon and epitaxial GaN

OpenAIRE

Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, D.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm

2013-01-01

Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurem...

Hierarchical Graphene-Encapsulated Hollow SnO2@SnS2 Nanostructures with Enhanced Lithium Storage Capability.

Science.gov (United States)

Xu, Wangwang; Xie, Zhiqiang; Cui, Xiaodan; Zhao, Kangning; Zhang, Lei; Dietrich, Grant; Dooley, Kerry M; Wang, Ying

2015-10-14

Complex hierarchical structures have received tremendous attention due to their superior properties over their constitute components. In this study, hierarchical graphene-encapsulated hollow SnO2@SnS2 nanostructures are successfully prepared by in situ sulfuration on the backbones of hollow SnO2 spheres via a simple hydrothermal method followed by a solvothermal surface modification. The as-prepared hierarchical SnO2@SnS2@rGO nanocomposite can be used as anode material in lithium ion batteries, exhibiting excellent cyclability with a capacity of 583 mAh/g after 100 electrochemical cycles at a specific current of 200 mA/g. This material shows a very low capacity fading of only 0.273% per cycle from the second to the 100th cycle, lower than the capacity degradation of bare SnO2 hollow spheres (0.830%) and single SnS2 nanosheets (0.393%). Even after being cycled at a range of specific currents varied from 100 mA/g to 2000 mA/g, hierarchical SnO2@SnS2@rGO nanocomposites maintain a reversible capacity of 664 mAh/g, which is much higher than single SnS2 nanosheets (374 mAh/g) and bare SnO2 hollow spheres (177 mAh/g). Such significantly improved electrochemical performance can be attributed to the unique hierarchical hollow structure, which not only effectively alleviates the stress resulting from the lithiation/delithiation process and maintaining structural stability during cycling but also reduces aggregation and facilitates ion transport. This work thus demonstrates the great potential of hierarchical SnO2@SnS2@rGO nanocomposites for applications as a high-performance anode material in next-generation lithium ion battery technology.

A novel enzymatic glucose sensor based on Pt nanoparticles-decorated hollow carbon spheres-modified glassy carbon electrode

International Nuclear Information System (INIS)

Luhana, Charles; Bo Xiangjie; Ju Jian; Guo Liping

2012-01-01

A new glucose biosensor was developed based on hollow carbon spheres decorated with platinum nanoparticles (Pt/HCSs)-modified glassy carbon electrode immobilized with glucose oxidase (GOx) with the help of Nafion. The Pt nanoparticles were well dispersed on the HCSs with an average size of 2.29 nm. The detection of glucose was achieved via electrochemical detection of the enzymatically liberated H 2 O 2 at +0.5 V versus Ag/AgCl at physiologic pH of 7.4. The Pt/HCSs-modified electrode exhibited excellent electrocatalytic activities toward both the oxidation and reduction of H 2 O 2 . The glucose biosensor showed good electrocatalytic performance in terms of high sensitivity (4.1 μA mM −1 ), low detection limit (1.8 μM), fast response time m ) and the maximum current density (i max ) values for the biosensor were 10.94 mM and 887 μA cm −2 respectively. Furthermore, this biosensor showed an acceptable reproducibility and high stability. The interfering signals from ascorbic acid and uric acid at concentration levels normally found in human blood were not much compared with the response to glucose. Blood serum samples were also tested with this biosensor and a good recovery was achieved for the two spiked serum samples.

Fabrication of silica hollow particles using yeast cells as a template

Science.gov (United States)

Liao, Shenglan; Lin, Liqin; Chen, Xiaofang; Liu, Jingru; Zhang, Biao

2018-04-01

Inorganic hollow particles have attracted great interest in recent years. In this study, silica micro spheres were produced. Yeast cells were used as a biological template. The silica shell was synthesized by the hydrolysis of tetraethoxysilane (TEOS) in water-alcohol mixtures as solvent using ammonia as a catalyst according to the Stoeber process. Various approaches including X-ray diffraction (XRD), scanning electron microscopy (SEM) and Fourier transformed infrared (FT-IR) spectroscopy were used to characterize the products. The results showed that the thermally treated samples were SiO2 hollow microspheres with a diameter varying between 1-5μm.

Facile Synthesis of V2O5 Hollow Spheres as Advanced Cathodes for High-Performance Lithium-Ion Batteries

Directory of Open Access Journals (Sweden)

Xingyuan Zhang

2017-01-01

Full Text Available Three-dimensional V2O5 hollow structures have been prepared through a simple synthesis strategy combining solvothermal treatment and a subsequent thermal annealing. The V2O5 materials are composed of microspheres 2–3 μm in diameter and with a distinct hollow interior. The as-synthesized V2O5 hollow microspheres, when evaluated as a cathode material for lithium-ion batteries, can deliver a specific capacity as high as 273 mAh·g−1 at 0.2 C. Benefiting from the hollow structures that afford fast electrolyte transport and volume accommodation, the V2O5 cathode also exhibits a superior rate capability and excellent cycling stability. The good Li-ion storage performance demonstrates the great potential of this unique V2O5 hollow material as a high-performance cathode for lithium-ion batteries.

Preparation and crystallization of hollow α-Fe2O3 microspheres following the gas-bubble template method

International Nuclear Information System (INIS)

Valladares, L. de los Santos; León Félix, L.; Espinoza Suarez, S.M.; Bustamante Dominguez, A.G.; Mitrelias, T.; Holmes, S.; Moreno, N.O.; Albino Aguiar, J.; Barnes, C.H.W.

2016-01-01

In this work we report the formation of hollow α-Fe 2 O 3 (hematite) microspheres by the gas-bubble template method. This technique is simple and it does not require hard templates, surfactants, special conditions of atmosphere or complex steps. After reacting Fe(NO 3 ) 3 .9H 2 O and citric acid in water by sol–gel, the precursor was annealed in air at different temperatures between 180 and 600 °C. Annealing at 550 and 600 °C generates bubbles on the melt which crystallize and oxidizes to form hematite hollow spheres after quenching. The morphology and crystal evolution are studied by means of X-ray diffraction and scanning electron microscopy. We found that after annealing at 250–400 °C, the sample consist of a mixture of magnetite, maghemite and hematite. Single hematite phase in the form of hollow microspheres is obtained after annealing at 550 and 600 °C. The crystallization and crystal size of the hematite shells increase with annealing temperature. A possible mechanism for hollow sphere formation is presented. - Highlights: • Formation of hollow hematite microspheres by the gas-bubble template method. • This technique does not require hard templates or special conditions of atmosphere. • Annealing promotes the transition magnetite to maghemite to hematite. • Crystallization of the hematite shells increase with annealing temperature.

Multifunctional Roles of TiO 2 Nanoparticles for Architecture of Complex Core−Shells and Hollow Spheres of SiO 2 −TiO 2 −Polyaniline System

KAUST Repository

Wang, Dan Ping

2009-10-27

Nanoparticles are often used as seeds to grow one-dimensional nanomaterials or as core materials to prepare core-shell nanostructures. On the other hand, the presynthesized inorganic nanoparticles can also be used as starting building blocks to prepare inorganic-polymer nanocomposites. In this work, we explore the roles of metal-oxide nanoparticles (anatase TiO2) in the area of constructional synthesis of highly complex core-shell and hollow sphere nanostructures comprising SiO2, TiO2, and polyaniline (PAN). In particular, multifunctional roles of oleate-surfactant-protected TiO2 nanoparticles have been revealed in this study: they provide starting sites for polymerization of aniline on the surface of SiO2 mesospheres; they land on the inner surface of polyaniline shell to form a secondary material phase; they work as initial crystalline seeds for homogeneous growth of interior TiO2 shell; and they serve as primary nanobuilding blocks to form exterior TiO2 shell on the polyaniline via self-assembly. With the assistance of the TiO2 nanoparticles, a total of six complex core-shell and hollow sphere nanocomposites (SiO 2/TiO2, SiO2/TiO2/PAN, SiO 2/TiO2/PAN/TiO2, TiO2/PAN, TiO 2/PAN/TiO2, and TiO2/TiO2) have been made in this work through controlled self-assembly, templating growth, polymerization, and homogeneous seeded growth. Applicability of these nanostructures in photocatalytic applications has also been demonstrated by our preliminary investigations. The easy separation of used catalysts after reaction seems to be advantageous because of relatively large external diameters of the lightweight nanocomposites. © 2009 American Chemical Society.

Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

International Nuclear Information System (INIS)

Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

2006-01-01

We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

Interconnected Silicon Hollow Nanospheres for Lithium-Ion Battery Anodes with Long Cycle Life

KAUST Repository

Yao, Yan

2011-07-13

Silicon is a promising candidate for the anode material in lithium-ion batteries due to its high theoretical specific capacity. However, volume changes during cycling cause pulverization and capacity fade, and improving cycle life is a major research challenge. Here, we report a novel interconnected Si hollow nanosphere electrode that is capable of accommodating large volume changes without pulverization during cycling. We achieved the high initial discharge capacity of 2725 mAh g-1 with less than 8% capacity degradation every hundred cycles for 700 total cycles. Si hollow sphere electrodes also show a Coulombic efficiency of 99.5% in later cycles. Superior rate capability is demonstrated and attributed to fast lithium diffusion in the interconnected Si hollow structure. © 2011 American Chemical Society.

Structure guided GANs

Science.gov (United States)

Cao, Feidao; Zhao, Huaici; Liu, Pengfei

2017-11-01

Generative adversarial networks (GANs) has achieved success in many fields. However, there are some samples generated by many GAN-based works, whose structure is ambiguous. In this work, we propose Structure Guided GANs that introduce structural similar into GANs to overcome the problem. In order to achieve our goal, we introduce an encoder and a decoder into a generator to design a new generator and take real samples as part of the input of a generator. And we modify the loss function of the generator accordingly. By comparison with WGAN, experimental results show that our proposed method overcomes largely sample structure ambiguous and can generate higher quality samples.

Embedding of Hollow Polymer Microspheres with Hydrophilic Shell in Nafion Matrix as Proton and Water Micro-Reservoir

Directory of Open Access Journals (Sweden)

Zhaolin Liu

2012-08-01

Full Text Available Assimilating hydrophilic hollow polymer spheres (HPS into Nafion matrix by a loading of 0.5 wt % led to a restructured hydrophilic channel, composed of the pendant sulfonic acid groups (–SO₃H and the imbedded hydrophilic hollow spheres. The tiny hydrophilic hollow chamber was critical to retaining moisture and facilitating proton transfer in the composite membranes. To obtain such a tiny cavity structure, the synthesis included selective generation of a hydrophilic polymer shell on silica microsphere template and the subsequent removal of the template by etching. The hydrophilic HPS (100–200 nm possessed two different spherical shells, the styrenic network with pendant sulfonic acid groups and with methacrylic acid groups, respectively. By behaving as microreservoirs of water, the hydrophilic HPS promoted the Grotthus mechanism and, hence, enhanced proton transport efficiency through the inter-sphere path. In addition, the HPS with the –SO₃H borne shell played a more effective role than those with the –CO₂H borne shell in augmenting proton transport, in particular under low humidity or at medium temperatures. Single H₂-PEMFC test at 70 °C using dry H₂/O₂ further verified the impactful role of hydrophilic HPS in sustaining higher proton flux as compared to pristine Nafion membrane.

Investigation of GaN LED with Be-implanted Mg-doped GaN layer

International Nuclear Information System (INIS)

Huang, H.-W.; Kao, C.C.; Chu, J.T.; Kuo, H.C.; Wang, S.C.; Yu, C.C.; Lin, C.F.

2004-01-01

We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10 18 cm -3 and low specific contact resistance value of 2.0 x 10 -4 Ωcm 2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process

Effect of Sphere Properties on Microstructure and Mechanical Performance of Cast Composite Metal Foams

Directory of Open Access Journals (Sweden)

Matias Garcia-Avila

2015-05-01

Full Text Available Aluminum-steel composite metal foams (Al-S CMF are manufactured using steel hollow spheres, with a variety of sphere carbon content, surface roughness, and wall porosity, embedded in an Aluminum matrix through gravity casting technique. The microstructural and mechanical properties of the material were studied using scanning electron microscopy, energy dispersive spectroscopy, and quasi-static compressive testing. Higher carbon content and surface roughness in the sphere wall were responsible for an increase in formation of intermetallic phases which had a strengthening effect at lower strain levels, increasing the yield strength of the material by a factor of 2, while higher sphere wall porosity resulted in a decrease on the density of the material and improving its cushioning and ductility maintaining its energy absorption capabilities.

Thermal and mechanical stresses in a functionally graded thick sphere

International Nuclear Information System (INIS)

Eslami, M.R.; Babaei, M.H.; Poultangari, R.

2005-01-01

In this paper, a general solution for the one-dimensional steady-state thermal and mechanical stresses in a hollow thick sphere made of functionally graded material is presented. The temperature distribution is assumed to be a function of radius, with general thermal and mechanical boundary conditions on the inside and outside surfaces of the sphere. The material properties, except Poisson's ratio, are assumed to vary along the radius r according to a power law function. The analytical solution of the heat conduction equation and the Navier equation lead to the temperature profile, radial displacement, radial stress, and hoop stress as a function of radial direction

Direct fabrication of metal-free hollow graphene balls with a self-supporting structure as efficient cathode catalysts of fuel cell

Energy Technology Data Exchange (ETDEWEB)

Lu, Yanqi; Liu, Mingda; Nie, Huagui, E-mail: huaguinie@126.com; Gu, Cancan; Liu, Ming; Yang, Zhi, E-mail: yang201079@126.com; Yang, Keqin; Chen, Xi’an; Huang, Shaoming, E-mail: smhuang@wzu.edu.cn [Wenzhou University, Nanomaterials and Chemistry Key Laboratory (China)

2016-06-15

Despite the good progress in developing carbon catalysts for oxygen reduction reaction (ORR), the current metal-free carbon catalysts are still far from satisfactory for large-scale applications of fuel cell. Developing hollow graphene balls with a self-supporting structure is considered to be an ideal method to inhibit graphene stacking and improve their catalytic performance. Herein, we fabricated metal-free hollow graphene balls with a self-supporting structure, through using a new strategy that involves direct metal-free catalytic growth from assembly of SiO{sub 2} spheres. To our knowledge, although much researches involving the synthesis of graphene balls have been reported, investigations into the direct metal-free catalytic growth of hollow graphene balls are rare. Furthermore, the electrocatalytic performance shows that the resulting hollow graphene balls have significantly high catalytic activity. More importantly, such catalysts also possess much improved stability and better methanol tolerance in alkaline media during the ORR compared with commercial Pt/C catalysts. The outstanding performances coupled with an easy and inexpensive preparing method indicated the great potential of the hollow graphene balls with a self-supporting structure in large-scale applications of fuel cell.Graphical AbstractHollow graphene balls with a self-supporting structure have been successfully fabricated, through using a new strategy that involves direct metal-free catalytic growth from 3D assembly of SiO{sub 2} spheres. The hollow graphene balls can exhibit a high catalytic activity, long-term stability, and an excellent methanol tolerance for the oxygen reduction reaction.

Direct fabrication of metal-free hollow graphene balls with a self-supporting structure as efficient cathode catalysts of fuel cell

International Nuclear Information System (INIS)

Lu, Yanqi; Liu, Mingda; Nie, Huagui; Gu, Cancan; Liu, Ming; Yang, Zhi; Yang, Keqin; Chen, Xi’an; Huang, Shaoming

2016-01-01

Despite the good progress in developing carbon catalysts for oxygen reduction reaction (ORR), the current metal-free carbon catalysts are still far from satisfactory for large-scale applications of fuel cell. Developing hollow graphene balls with a self-supporting structure is considered to be an ideal method to inhibit graphene stacking and improve their catalytic performance. Herein, we fabricated metal-free hollow graphene balls with a self-supporting structure, through using a new strategy that involves direct metal-free catalytic growth from assembly of SiO_2 spheres. To our knowledge, although much researches involving the synthesis of graphene balls have been reported, investigations into the direct metal-free catalytic growth of hollow graphene balls are rare. Furthermore, the electrocatalytic performance shows that the resulting hollow graphene balls have significantly high catalytic activity. More importantly, such catalysts also possess much improved stability and better methanol tolerance in alkaline media during the ORR compared with commercial Pt/C catalysts. The outstanding performances coupled with an easy and inexpensive preparing method indicated the great potential of the hollow graphene balls with a self-supporting structure in large-scale applications of fuel cell.Graphical AbstractHollow graphene balls with a self-supporting structure have been successfully fabricated, through using a new strategy that involves direct metal-free catalytic growth from 3D assembly of SiO_2 spheres. The hollow graphene balls can exhibit a high catalytic activity, long-term stability, and an excellent methanol tolerance for the oxygen reduction reaction

Preparation of Nickel Cobalt Sulfide Hollow Nanocolloids with Enhanced Electrochemical Property for Supercapacitors Application

Science.gov (United States)

Chen, Zhenhua; Wan, Zhanghui; Yang, Tiezhu; Zhao, Mengen; Lv, Xinyan; Wang, Hao; Ren, Xiuli; Mei, Xifan

2016-01-01

Nanostructured functional materials with hollow interiors are considered to be good candidates for a variety of advanced applications. However, synthesis of uniform hollow nanocolloids with porous texture via wet chemistry method is still challenging. In this work, nickel cobalt precursors (NCP) in sub-micron sized spheres have been synthesized by a facile solvothermal method. The subsequent sulfurization process in hydrothermal system has changed the NCP to nickel cobalt sulfide (NCS) with porous texture. Importantly, the hollow interiors can be tuned through the sulfurization process by employing different dosage of sulfur source. The derived NCS products have been fabricated into supercapacitor electrodes and their electrochemical performances are measured and compared, where promising results were found for the next-generation high-performance electrochemical capacitors. PMID:27114165

Nanometric onion-like hollow spheres in laser synthesized boron nitride ultrafine powder

Energy Technology Data Exchange (ETDEWEB)

Boulanger, L; Willaime, F [CEA Centre d` Etudes de Saclay, 91 - Gif-sur-Yvette (France). Direction des Technologies Avancees; Cauchetier, M [CEA Centre d` Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. de Recherche sur l` Etat Condense, les Atomes et les Molecules

1994-12-31

TEM observations of ultra-fine B Cl{sub 3}-N H{sub 3} powders elaborated by an innovative method, laser pyrolysis, are presented. The resulting microstructures in the as received state and after thermal treatments show small nanometric scale configurations close to the ones met with carbon, such as an hollowed configuration of onions but at a much smaller scale than with carbon. 3 figs., 3 refs.

Taevo Gans / Ene Ammer

Index Scriptorium Estoniae

Ammer, Ene

1998-01-01

Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos

Facile synthesis of hollow dendritic Ag/Pt alloy nanoparticles for enhanced methanol oxidation efficiency.

Science.gov (United States)

Sui, Ning; Wang, Ke; Shan, Xinyao; Bai, Qiang; Wang, Lina; Xiao, Hailian; Liu, Manhong; Colvin, Vicki L; Yu, William W

2017-11-14

Hollow dendritic Ag/Pt alloy nanoparticles were synthesized by a double template method: Ag nanoparticles as the hard template to obtain hollow spheres by a galvanic replacement reaction between PtCl 6 2- and metallic Ag and surfactant micelles (Brij58) as the soft template to generate porous dendrites. The formation of a Ag/Pt alloy phase was confirmed by XRD and HRTEM. Elemental mapping and line scanning revealed the formation of the hollow architecture. We studied the effects of the Ag/Pt ratio, surfactant and reaction temperature on the morphology. In addition, we explored the formation process of hollow dendritic Ag/Pt nanoparticles by tracking the morphologies of the nanostructures formed at different stages. In order to improve the electrocatalytic property, we controlled the size of the nanoparticles and the thickness of the shell by adjusting the amount of the precursor. We found that these Ag/Pt alloy nanoparticles exhibited high activity (440 mA mg -1 ) and stability as an electrocatalyst for catalyzing methanol oxidation.

A novel enzymatic glucose sensor based on Pt nanoparticles-decorated hollow carbon spheres-modified glassy carbon electrode

Energy Technology Data Exchange (ETDEWEB)

Luhana, Charles; Bo Xiangjie; Ju Jian; Guo Liping, E-mail: guolp078@nenu.edu.cn [Northeast Normal University, Faculty of Chemistry (China)

2012-10-15

A new glucose biosensor was developed based on hollow carbon spheres decorated with platinum nanoparticles (Pt/HCSs)-modified glassy carbon electrode immobilized with glucose oxidase (GOx) with the help of Nafion. The Pt nanoparticles were well dispersed on the HCSs with an average size of 2.29 nm. The detection of glucose was achieved via electrochemical detection of the enzymatically liberated H{sub 2}O{sub 2} at +0.5 V versus Ag/AgCl at physiologic pH of 7.4. The Pt/HCSs-modified electrode exhibited excellent electrocatalytic activities toward both the oxidation and reduction of H{sub 2}O{sub 2}. The glucose biosensor showed good electrocatalytic performance in terms of high sensitivity (4.1 {mu}A mM{sup -1}), low detection limit (1.8 {mu}M), fast response time <3 s, and wide linear range (0.04-8.62 mM). The apparent Michaelis-Menten constant (K{sub m}) and the maximum current density (i{sub max}) values for the biosensor were 10.94 mM and 887 {mu}A cm{sup -2} respectively. Furthermore, this biosensor showed an acceptable reproducibility and high stability. The interfering signals from ascorbic acid and uric acid at concentration levels normally found in human blood were not much compared with the response to glucose. Blood serum samples were also tested with this biosensor and a good recovery was achieved for the two spiked serum samples.

Controllable fabrication and characterization of biocompatible core-shell particles and hollow capsules as drug carrier

Science.gov (United States)

Hao, Lingyun; Gong, Xinglong; Xuan, Shouhu; Zhang, Hong; Gong, Xiuqing; Jiang, Wanquan; Chen, Zuyao

2006-10-01

SiO 2@CdSe core-shell particles were fabricated by controllable deposition CdSe nanoparticles on silica colloidal spheres. Step-wise coating process was tracked by the TEM and XRD measurements. In addition, SiO 2@CdSe/polypyrrole(PPy) multi-composite particles were synthesized based on the as-prepared SiO 2@CdSe particles by cationic polymerization. The direct electrochemistry of myoglobin (Mb) could be performed by immobilizing Mb on the surface of SiO 2@CdSe particles. Immobilized with Mb, SiO 2@CdSe/PPy-Mb also displayed good bioelectrochemical activity. It confirmed the good biocompatible property of the materials with protein. CdSe hollow capsules were further obtained as the removal of the cores of SiO 2@CdSe spheres. Hollow and porous character of CdSe sub-meter size capsules made them becoming hopeful candidates as drug carriers. Doxorubicin, a typical an antineoplastic drug, was introduced into the capsules. A good sustained drug release behavior of the loading capsules was discovered via performing a release test in the PBS buffer (pH 7.4) solution at 310 k. Furthermore, SiO 2@CdSe/PPy could be converted to various smart hollow capsules via selectively removal of their relevant components.

In situ synthesis and characterization of GaN nanorods through thermal decomposition of pre-grown GaN films

International Nuclear Information System (INIS)

Yan, P; Qin, D; An, Y K; Li, G Z; Xing, J; Liu, J J

2008-01-01

Herein we describe a thermal treatment route to synthesize gallium nitride (GaN) nanorods. In this method, GaN nanorods were synthesized by thermal treatment of GaN films at a temperature of 800 deg. C. The morphology and structure of GaN nanorods were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that GaN nanorods have a hexagonal wurtzite structure with diameters ranging from 30 to 50 nm. Additionally, GaN nanoplates are also founded in the products. The growth process of GaN nanostructures was investigated and a thermal decomposition mechanism was proposed. Our method provides a cost-effective route to fabricate GaN nanorods, which will benefit the fabrication of one-dimensional nanomaterials and device applications

Preparation and crystallization of hollow α-Fe{sub 2}O{sub 3} microspheres following the gas-bubble template method

Energy Technology Data Exchange (ETDEWEB)

Valladares, L. de los Santos, E-mail: ld301@cam.ac.uk [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J Thomson Av., Cambridge, CB3 0HE (United Kingdom); León Félix, L. [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Laboratory of Magnetic Characterization, Instituto de Física, Universidade de Brasília, DF 70910-900, Brasilia (Brazil); Espinoza Suarez, S.M.; Bustamante Dominguez, A.G. [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Mitrelias, T.; Holmes, S. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J Thomson Av., Cambridge, CB3 0HE (United Kingdom); Moreno, N.O. [Departamento de Física, Universidade Federal de Sergipe, 49100-000, Sao Cristóvao, Sergipe (Brazil); Albino Aguiar, J. [Laboratório de Supercondutividade e Materiais Avançados, Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife (Brazil); Barnes, C.H.W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J Thomson Av., Cambridge, CB3 0HE (United Kingdom)

2016-02-01

In this work we report the formation of hollow α-Fe{sub 2}O{sub 3} (hematite) microspheres by the gas-bubble template method. This technique is simple and it does not require hard templates, surfactants, special conditions of atmosphere or complex steps. After reacting Fe(NO{sub 3}){sub 3}.9H{sub 2}O and citric acid in water by sol–gel, the precursor was annealed in air at different temperatures between 180 and 600 °C. Annealing at 550 and 600 °C generates bubbles on the melt which crystallize and oxidizes to form hematite hollow spheres after quenching. The morphology and crystal evolution are studied by means of X-ray diffraction and scanning electron microscopy. We found that after annealing at 250–400 °C, the sample consist of a mixture of magnetite, maghemite and hematite. Single hematite phase in the form of hollow microspheres is obtained after annealing at 550 and 600 °C. The crystallization and crystal size of the hematite shells increase with annealing temperature. A possible mechanism for hollow sphere formation is presented. - Highlights: • Formation of hollow hematite microspheres by the gas-bubble template method. • This technique does not require hard templates or special conditions of atmosphere. • Annealing promotes the transition magnetite to maghemite to hematite. • Crystallization of the hematite shells increase with annealing temperature.

Fabrication and Characterization of Nanoenergetic Hollow Spherical Hexanitrostibene (HNS Derivatives

Directory of Open Access Journals (Sweden)

Xiong Cao

2018-05-01

Full Text Available The spherization of nanoenergetic materials is the best way to improve the sensitivity and increase loading densities and detonation properties for weapons and ammunition, but the preparation of spherical nanoenergetic materials with high regularization, uniform size and monodispersity is still a challenge. In this paper, nanoenergetic hollow spherical hexanitrostibene (HNS derivatives were fabricated via a one-pot copolymerization strategy, which is based on the reaction of HNS and piperazine in acetonitrile solution. Characterization results indicated the as-prepared reaction nanoenergetic products were HNS-derived oligomers, where a free radical copolymerization reaction process was inferred. The hollow sphere structure of the HNS derivatives was characterized by scanning electron microscopy (SEM, transmission electron microscope (TEM, and synchrotron radiation X-ray imaging technology. The properties of the nanoenergetic hollow spherical derivatives, including thermal decomposition and sensitivity are discussed in detail. Sensitivity studies showed that the nanoenergetic derivatives exhibited lower impact, friction and spark sensitivity than raw HNS. Thermogravimetric-differential scanning calorimeter (TG-DSC results showed that continuous exothermic decomposition occurred in the whole temperature range, which indicated that nanoenergetic derivatives have a unique role in thermal applications. Therefore, nanoenergetic hollow spherical HNS derivatives could provide a new way to modify the properties of certain energetic compounds and fabricate spherical nanomaterials to improve the charge configuration.

Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

International Nuclear Information System (INIS)

Zhao Danmei; Zhao Degang; Jiang Desheng; Liu Zongshun; Zhu Jianjun; Chen Ping; Liu Wei; Li Xiang; Shi Ming

2015-01-01

A method for growing GaN epitaxial layer on Si (111) substrate is investigated. Due to the large lattice mismatch between GaN and AlN, GaN grown directly above an AlN buffer layer on the Si substrate turns out to be of poor quality. In this study, a GaN transition layer is grown additionally on the AlN buffer before the GaN epitaxial growth. By changing the growth conditions of the GaN transition layer, we can control the growth and merging of islands and control the transfer time from 3D to 2D growth mode. With this method, the crystalline quality of the GaN epitaxial layer can be improved and the crack density is reduced. Here, we have investigated the impact of a transition layer on the crystalline quality and stress evolution of a GaN epitaxial layer with methods of X-ray diffraction, optical microscopy and in situ reflectivity trace. With the increasing thickness of transition layer, the crack decreases and the crystalline quality is improved. But when the transition layer exceeds a critical thickness, the crystalline quality of the epilayer becomes lower and the crack density increases. (paper)

Scattering Light by а Cylindrical Capsule with Arbitrary End Caps in the Rayleigh-Gans-Debye Approximation

Directory of Open Access Journals (Sweden)

K. A. Shapovalov

2015-01-01

Full Text Available The paper concerns the light scattering problem of biological objects of complicated structure.It considers optically “soft” (having a refractive index close to that of a surrounding medium homogeneous cylindrical capsules, composed of three parts: central one that is cylindrical and two symmetrical rounding end caps. Such capsules can model more broad class of biological objects than the ordinary shapes of a spheroid or sphere. But, unfortunately, if a particle has other than a regular geometrical shape, then it is very difficult or impossible to solve the scattering problem analytically in its most general form that oblige us to use numerical and approximate analytical methods. The one of such approximate analytical method is the Rayleigh-Gans-Debye approximation (or the first Born approximation.So, the Rayleigh-Gans-Debye approximation is valid for different objects having size from nanometer to millimeter and depending on wave length and refractive index of an object under small phase shift of central ray.The formulas for light scattering amplitude of cylindrical capsule with arbitrary end caps in the Rayleigh-Gans-Debye approximation in scalar form are obtained. Then the light scattering phase function [or element of scattering matrix f11] for natural incident light (unpolarized or arbitrary polarized light is calculated.Numerical results for light scattering phase functions of cylindrical capsule with conical, spheroidal, paraboloidal ends in the Rayleigh-Gans-Debye approximation are compared. Also numerical results for light scattering phase function of cylindrical capsule with conical ends in the Rayleigh-Gans-Debye approximation and in the method of Purcell-Pennypacker (or Discrete Dipole method are compared. The good agreement within an application range of the RayleighGans-Debye approximation is obtained.Further continuation of the work, perhaps, is a consideration of multilayer cylindrical capsule in the Rayleigh-Gans

Hollow Spheres of Iron Carbide Nanoparticles Encased in Graphitic Layers as Oxygen Reduction Catalysts

DEFF Research Database (Denmark)

Hu, Yang; Jensen, Jens Oluf; Zhang, Wei

2014-01-01

Nonprecious metal catalysts for the oxygen reduction reaction are the ultimate materials and the foremost subject for low‐temperature fuel cells. A novel type of catalysts prepared by high‐pressure pyrolysis is reported. The catalyst is featured by hollow spherical morphologies consisting...

The use of additive ceramic hollow spheres on cement slurry to prevent lost circulation in formation `X' having low pressure fracture

Science.gov (United States)

Rita, Novia; Mursyidah, Syahindra, Michael

2018-03-01

When drilling, if the hydrostatic pressure is higher than formation pressure (fracture pressure) it will cause lost circulation during cementing process. To solve this problem, hydrostatic pressure of slurry can be decreased by lowering the slurry density by using some additives. Ceramic Hollow Spheres (CHS) is lightweight additive. This additive comes with low specific gravity so it can lowered the slurry density. When the low-density slurry used in cementing process, it can prevent low circulation and fractured formation caused by cement itself. Class G cement is used in this experiment with the standard density of this slurry is 15.8 ppg. With the addition of CHS, slurry density lowered to 12.5 ppg. CHS not only used to lower the slurry density, it also used to make the same properties with the standard slurry even the density has been lowered. Both thickening time and compressive strength have not change if the CHS added to the slurry. With addition of CHS, thickening time at 70 Bc reached in 03 hours 12 minutes. For the compressive strength, 2000 psi reached in 07 hours 07 minutes. Addition of CHS can save more time in cementing process of X formation.

Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

Energy Technology Data Exchange (ETDEWEB)

Choudhary, B. S. [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India); Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Singh, A.; Tyagi, P. K. [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Tanwar, S. [Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Kumar, M. Senthil; Kushvaha, S. S., E-mail: kushvahas@nplindia.org [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India)

2016-04-13

We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

Simultaneous chemical modification and structural transformation of Stöber silica spheres for integration of nanocatalysts

KAUST Repository

Yao, Kexin; Zeng, Huachun

2012-01-01

) hollow spheres, on which zinc oxide (ZnO) phase and ruthenium (Ru) nanoparticles have been deposited and assembled sequentially in solution phase. A series of complex Ru/ZnO/Zn-SiO 2 nanocatalysts has been thus been integrated onto the zinc-doped SiO 2

Synthesis and Characterization of Hollow Magnetic Alloy (GdNi2, Co5Gd Nanospheres Coated with Gd2O3

Directory of Open Access Journals (Sweden)

Wang Li

2014-01-01

Full Text Available Uniform magnetic hollow nanospheres (GdNi2, Co5Gd coated with Gd2O3 have been successfully prepared on a large scale via a urea-based homogeneous precipitation method using silica (SiO2 spheres as sacrificed templates, followed by subsequent heat treatment. Nitrogen sorption measurements and scanning electron microscope reveal that these hollow-structured magnetic nanospheres have the mesoporous shells that are composed of a large amount of uniform nanoparticles. After reduction treatment, these nanoparticles exhibit superparamagnetism that might have potential applications in medicine. Furthermore, the developed synthesis route may provide an important guidance for the preparation of other multifunctional hollow spherical materials.

Z L GAN

Indian Academy of Sciences (India)

Z L GAN. Articles written in Sadhana. Volume 43 Issue 4 April 2018 pp 59. Effect of scale size, orientation type and dispensing method on void formation in the CUF encapsulation of BGA · AIZAT ABAS FEI CHONG NG Z L GAN M H H ISHAK M Z ABDULLAH GEAN YUEN CHONG · More Details Abstract Fulltext PDF.

One-step synthesis of in situ reduced metal Bi decorated bismuth molybdate hollow microspheres with enhancing photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Jin, Meng [College of Chemistry & Chemical Engineering, Chongqing University, Chongqing 400044 (China); Lu, Shiyu [Institute for Clean Energy & Advanced Materials, Faculty of Materials and Energy, Southwest University, Chongqing, 400715 (China); Ma, Li, E-mail: mlsys607@126.com [College of Chemistry & Chemical Engineering, Chongqing University, Chongqing 400044 (China); Gan, Mengyu [College of Chemistry & Chemical Engineering, Chongqing University, Chongqing 400044 (China)

2017-02-28

Highlights: • Metal Bi decorated Bi{sub 2-x}MoOy was synthesised by a simple and one-step. • Bi{sup 3+} could be in situ reduced to Bi{sup 0} gradually and dispersed uniform in Bi{sub 2-x}MoOy. • It shows excellent photocatalytic activity due to special structure and composition. - Abstract: In this feature work, in situ metal Bi are successfully modified bismuth molybdate hollow spheres using an effective one-pot solvthermal reduction without any temple. In order to deeply understand the influence of reduction conditions on the texture, surface state, and photocatalytic performance of the resulting samples, a series of products were synthesized by tuning the temperatures. The similar morphology, surface area of photocatalysis (BMO-160 and BMO-170) were synthesized, only with the different composition. The detailed characterization and analysis distinctly suggested that increasing solvothermal reduction temperature led to Bi{sup 3+} was in situ reduced to elementary substance Bi{sup 0} by ethylene glycol gradually and dispersed very uniform in bismuth molybdate. Benefiting from the enhanced charge separation, transfer, and donor density resulting from the formation of Bi decorated bismuth molybdate where Bi as cocatalyst, the photocatalytic performance of the reductive Bi/Bi{sub 2-x}MoO{sub y} hollow spheres (BMO-170) is higher than that of the untreated Bi{sub 2-x}MoO{sub y} hollow spheres (BMO-160) for Rh6G degradation under visible light irradiation. Additionally, the reductive BMO-170 has a superior stability after five cycles.

Hierarchical CuO hollow microspheres: Controlled synthesis for enhanced lithium storage performance

International Nuclear Information System (INIS)

Guan Xiangfeng; Li Liping; Li Guangshe; Fu Zhengwei; Zheng Jing; Yan Tingjiang

2011-01-01

Graphical abstract: Hierarchical CuO microspheres with hollow interiors were formed through self-wrapping of a single layer of radically oriented CuO nanorods, and these microspheres showed excellent cycle performance and enhanced lithium storage capacity. Display Omitted Research highlights: → Hierarchical CuO hollow microspheres were prepared by a hydrothermal method. → The CuO hollow microspheres were assembled from radically oriented nanorods. → The growth mechanism was proposed to proceed via self-assembly and Ostwald's ripening. → The microspheres showed good cycle performance and enhanced lithium storage capacity. → Hierarchical microstructures with hollow interiors promote electrochemical property. - Abstract: In this work, hierarchical CuO hollow microspheres were hydrothermally prepared without use of any surfactants or templates. By controlling the formation reaction conditions and monitoring the relevant reaction processes using time-dependent experiments, it is demonstrated that hierarchical CuO microspheres with hollow interiors were formed through self-wrapping of a single layer of radically oriented CuO nanorods, and that hierarchical spheres could be tuned to show different morphologies and microstructures. As a consequence, the formation mechanism was proposed to proceed via a combined process of self-assembly and Ostwald's ripening. Further, these hollow microspheres were initiated as the anode material in lithium ion batteries, which showed excellent cycle performance and enhanced lithium storage capacity, most likely because of the synergetic effect of small diffusion lengths in building blocks of nanorods and proper void space that buffers the volume expansion. The strategy reported in this work is reproducible, which may help to significantly improve the electrochemical performance of transition metal oxide-based anode materials via designing the hollow structures necessary for developing lithium ion batteries and the relevant

Surfactant-assisted solvothermal preparation of submicrometer-sized hollow hematite particles and their photocatalytic activity

International Nuclear Information System (INIS)

Lian Suoyuan; Wang Enbo; Gao Lei; Wu Di; Song Yanli; Xu Lin

2006-01-01

Submicrometer-sized hollow hematite particles were prepared through a surfactant-assisted solvothermal process. The amount of FeCl 3 .H 2 O and cetyltrimethylammonium bromide, and the acidity of the solution were systematically altered to study their effects on the final results. Hollow hematite particles with shapes from sphere, ellipsoid to peanut were obtained. Their sizes range from 500 nm to 2 μm with shell thickness from 100 to 500 nm. Powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy and selected area electron diffraction were applied to investigate the products' crystallinity, purity, morphology, size and structural features. Finally, the study on the photocatalysis of Fe 2 O 3 for the destruction of diethyl phthalate in water was carried out. The result proved that Fe 2 O 3 hollow particles were effective photocatalysts for the degradation of DEP, with 96.8% destruction ratio being obtained within 60 min

Improved InGaN/GaN quantum wells on treated GaN template with a Ga-rich GaN interlayer

International Nuclear Information System (INIS)

Fang, Zhilai; Shen, Xiyang; Wu, Zhengyuan; Zhang, Tong-Yi

2015-01-01

Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

P-type doping of GaN

International Nuclear Information System (INIS)

Wong, R.K.

2000-01-01

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover

P-type doping of GaN

Energy Technology Data Exchange (ETDEWEB)

Wong, Raechelle Kimberly [Univ. of California, Berkeley, CA (United States)

2000-04-01

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Preparation of hollow microspheres of Ce{sup 3+} doped NiCo ferrite with high microwave absorbing performance

Energy Technology Data Exchange (ETDEWEB)

Duan, Hong-zhen, E-mail: duanhz2000@163.com; Zhou, Fang-ling; Cheng, Xia; Chen, Guo-hong; Li, Qiao-ling

2017-02-15

Hollow microspheres of Ce{sup 3+} doped NiCo-ferrites were synthesized by template-based-deposition and surface reaction method with carbon sphere as the template. The phase structure, morphology, magnetic properties and wave absorbing properties of the sample were characterized by X-ray powder diffraction(XRD), Scanning electronic microscopy(SEM), Vibration sample magnetometer (VSM) and a network vector analyzer (NVA), respectively. The results indicated that the particle size of the carbon sphere sample prepared by hydrothermal method was about 0.5 µm and the particle size of the Ni{sub 0.5}Co{sub 0.5}Fe{sub 2}O{sub 4} sample prepared by template-based method was about 300 nm. The influence of the amount of rare earth element on the magnetic and absorbing properties of sample was studied. The saturation magnetization and coercivity decreased gradually with the increase of the content of Ce. When the content of Ce was 0.02, the maximal saturation magnetization value and coercivity was 75.72 emu• g{sup −1} and 789.88 Oe, respectively. The associated ferrite hollow spheres have good absorbing performance, and the return loss value was −18.8 dB at 5500 MHz. - Highlights: • Hollow microspheres of Ce{sup 3+} doped NiCo-ferrites were synthesized by template-based-deposition and surface reaction method. • The influence of rare earth Ce{sup 3+} on the magnetic and absorbing properties of sample was studied. • When the content of Ce was 0.02, the maximal saturation magnetization value and coercivity was 75.72 emu• g{sup −1} and 789.88 Oe, respectively.

Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

International Nuclear Information System (INIS)

Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.

2009-01-01

The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template

Synthetic Strategies and Applications of GaN Nanowires

Directory of Open Access Journals (Sweden)

Guoquan Suo

2014-01-01

Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

Synthesis and characterization hollow spherical La0.7Sr0.2Ca0.1Co0.9Fe0.1O3–δ (LSCCT for cathode of solid oxide fuel cell (SOFC

Directory of Open Access Journals (Sweden)

H. H. Yu

2016-10-01

Full Text Available Hollow spheres structures of La0.7Sr0.2Ca0.1Co0.9Fe0.1O3–δ (LSCCT have been synthesized via hydrothermal method using carbon spheres as template. The structure and electrical conductivity of obtained samples are characterized by X-ray diffraction (XRD, scanning electron microscope (SEM, transmission electron microscope (TEM and direct current (DC four-probe method respectively. The results show that hollow spheres structures of LSCCT with the mean particle size of 0,9 - 1,2 μm is single perovskite. The electrical conductivity of the samples is higher than 100 S/cm from 600 to 800 ℃ and can meet the demand of the electrical properties for the cathode materials.

Hierarchical cobalt poly-phosphide hollow spheres as highly active and stable electrocatalysts for hydrogen evolution over a wide pH range

Science.gov (United States)

Wu, Tianli; Pi, Mingyu; Wang, Xiaodeng; Guo, Weimeng; Zhang, Dingke; Chen, Shijian

2018-01-01

Exploring highly-efficient and low-cost non-noble metal electrocatalyst toward the hydrogen evolution reaction (HER) is highly desired for renewable energy system but remains challenging. In this work, three dimensional hierarchical porous cobalt poly-phosphide hollow spheres (CoP3 HSs) were prepared by topotactic phosphidation of the cobalt-based precursor via vacuum encapsulation technique. As a porous HER cathode, the CoP3 HSs delivers remarkable electrocatalytic performance over the wide pH range. It needs overpotentials of -69 mV and -118 mV with a small Tafel slope of 51 mV dec-1 to obtain current densities of 10 mA cm-2 and 50 mA cm-2, respectively, and maintains its electrocatalytic performance over 30 h in acidic solution. In addition, CoP3 also exhibit superior electrocatalytic performance and stability under neutral and alkaline conditions for the HER. Both experimental measurements and density functional theory (DFT) calculations are performed to explore the mechanism behind the excellent HER performance. The results of our study make the porous CoP3 HSs as a promising electrocatalyst for practical applications toward energy conversion system and present a new way for designing and fabricating HER electrodes through high degree of phosphorization and nano-porous architecture.

A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

Science.gov (United States)

Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

2016-10-01

Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.

Tailored synthesis of monodispersed nano/submicron porous silicon oxycarbide (SiOC) spheres with improved Li-storage performance as an anode material for Li-ion batteries

Science.gov (United States)

Shi, Huimin; Yuan, Anbao; Xu, Jiaqiang

2017-10-01

A spherical silicon oxycarbide (SiOC) material (monodispersed nano/submicron porous SiOC spheres) is successfully synthesized via a specially designed synthetic strategy involving pyrolysis of phenyltriethoxysilane derived pre-ceramic polymer spheres at 900 °C. In order to prevent sintering of the pre-ceramic polymer spheres upon heating, a given amount of hollow porous SiO2 nanobelts which are separately prepared from tetraethyl orthosilicate with CuO nanobelts as templates are introduced into the pre-ceramic polymer spheres before pyrolysis. This material is investigated as an anode for lithium-ion batteries in comparison with the large-size bulk SiOC material synthesized under the similar conditions but without hollow SiO2 nanobelts. The maximum reversible specific capacity of ca. 900 mAh g-1 is delivered at the current density of 100 mA g-1 and ca. 98% of the initial capacity is remained after 100 cycles at 100 mA g-1 for the SiOC spheres material, which are much superior to the bulk SiOC material. The improved lithium storage performance in terms of specific capacity and cyclability is attributed to its particular morphology of monodisperse nano/submicron porous spheres as well as its modified composition and microstructure. This SiOC material has higher Li-storage activity and better stability against volume expansion during repeated lithiation and delithiation cycling.

Hierarchical NiO-SiO2 composite hollow microspheres with enhanced adsorption affinity towards Congo red in water.

Science.gov (United States)

Lei, Chunsheng; Zhu, Xiaofeng; Zhu, Bicheng; Yu, Jiaguo; Ho, Wingkei

2016-03-15

Hollow microspheres and hierarchical porous nanostructured materials with desired morphologies have gained remarkable attention for their potential applications in environmental technology. In this study, NiO-SiO2 hollow microspheres were prepared by co-precipitation with SiO2 and nickel salt as precursors, followed by dipping in alkaline solution and calcination. The samples were characterized by X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, nitrogen adsorption, and X-ray photoelectron spectroscopy. The synthesized hollow spheres were composed of a SiO2 shell and hierarchical porous NiO nanosheets on the surface. Adsorption experiments suggested that NiO-SiO2 composite particles were powerful adsorbents for removal of Congo red from water, with a maximum adsorption capacity of 204.1 mg/g. The high specific surface areas, hollow structures, and hierarchical porous surfaces of the hollow composite particles are suitable for various applications, including adsorption of pollutants, chemical separation, and water purification. Copyright © 2015 Elsevier Inc. All rights reserved.

Down-conversion emission of Ce3+-Tb3+ co-doped CaF2 hollow spheres and application for solar cells

Science.gov (United States)

Cheng, Yufei; Wang, Yongbo; Teng, Feng; Dong, Hua; Chen, Lida; Mu, Jianglong; Sun, Qian; Fan, Jun; Hu, Xiaoyun; Miao, Hui

2018-03-01

Luminescent downconversion is a promising way to harvest ultraviolet sunlight and transform it into visible light that can be absorbed by solar cells, and has potential to improve their photoelectric conversion efficiency. In this work, the uniform hollow spheres and well dispersed CaF2 phosphors doped with rare-earth Ce3+ and Tb3+ ions are prepared by a one-step hydrothermal synthesis method. Benefiting from the stronger ability of absorption and emission and excellent transparency property, we demonstrate that the application of the doped nanocrystals can efficiently improve visible light transmittance. The chosen phosphors are added in the SiO2 sols so as to get the anti-reflection coatings with wavelength conversion bi-functional films, promoting the optical transmittance in the visible and near-infrared range which matches with the range of the band gap energy of silicon semiconductor. Optimized photoelectric conversion efficiency of 14.35% and the external quantum efficiency over 70% from 450 to 950 nm are obtained through the silicon solar cells with 0.10 g phosphors coating. Compared with the pure glass devices, the photoelectric conversion efficiency is enhanced by 0.69%. This work indicates that fluorescent downconversion not only can serve as proof of principles for improving photoelectric conversion efficiency of solar cells but also may be helpful to practical application in the future.

Synthesis and Characterization of Gd2O3 Hollow Microspheres Using a Template-Directed Method

Directory of Open Access Journals (Sweden)

Xueliang Jiang

2016-04-01

Full Text Available Uniform rare-earth gadolinium oxide (Gd2O3 hollow microspheres, as formed through a urea-assisted homogenous precipitation process using carbon spheres as a template and a subsequent heat treatment, were characterized by using X-ray diffraction, Fourier transformed infared spectroscopy, thermogravimetry, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy and Brunauer-Emmett-Tellet surface area measurement. The results indicate that the final products can be indexed to a cubic Gd2O3 phase with high purity and have a uniform morphology at 500 nm in diameter and 20 nm in shell thickness. The as-synthesized Gd2O3 hollow microspheres exhibited a superior photooxidation activity to that of Gd2O3 powder and an effect similar to P25, significantly broadening the potential of Gd2O3 hollow microspheres for many practical applications.

GaN based nanorods for solid state lighting

Energy Technology Data Exchange (ETDEWEB)

Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

2012-04-01

In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

Hierarchical flower-like carbon nanosheet assembly with embedded hollow NiCo{sub 2}O{sub 4} nanoparticles for high- performance lithium ion batteries

Energy Technology Data Exchange (ETDEWEB)

Fang, Ling; Qiu, Huajun; Luo, Pan; Li, Wenxiang; Zhang, Huijuan; Wang, Yu, E-mail: wangy@cqu.edu.cn

2017-05-01

Highlights: • Flower-like NiCo{sub 2}O{sub 4}@carbon nanosphere is firstly synthesized for Li-ion batteries. • The nanostructure exhibits the unique feature of hollow NiCo{sub 2}O{sub 4} nanoparticles embedded inside and graphitized carbon layers coating outside. • The sample reveals stable structure, large specific surface area and good electrical conductivity. • The composite exhibits superior rate capability, cycling capacity and excellent Coulombic efficiency. - Abstract: The fabrication of closely bounded metal oxides/carbon hybrid nano-structures is significant for its use in energy-related areas especially lithium ion batteries (LIBs). In this research, a flower-like carbon sphere with hollow NiCo{sub 2}O{sub 4} nanoparticles encapsulated inside the carbon thin nanopetal is fabricated by using a mixed basic carbonate nickel and cobalt sphere as the precursor and templates followed by the outer carbon membrane covering and two-step calcination process. When tested as anode material for LIBs, this flower-like carbon-based hybrid sphere demonstrates a significantly enhanced reversible capacity and cycling stability at various current densities.

Synthesis and electrochemical properties of porous double-shelled Mn2O3 hollow microspheres as a superior anode material for lithium ion batteries

International Nuclear Information System (INIS)

Qiao, Yu; Yu, Yan; Jin, Yi; Guan, Yi-Biao; Chen, Chun-Hua

2014-01-01

Highlights: • Double-shelled Mn 2 O 3 hollow microspheres are prepared by a multi-step. • synthesis procedure. • Solid, hollow and yolk-structured Mn 2 O 3 spheres are prepared for comparison. • The double-shelled hollow Mn 2 O 3 is superior in electrochemical properties. - Abstract: By means of a specially designed multi-step synthesis procedure involving steps of precipitation, controlled oxidation, selective etching and calcination, porous double-shelled Mn 2 O 3 hollow microspheres are synthesized. Solid, hollow and yolk-structured Mn 2 O 3 are also similarly synthesized for comparison. X-ray diffraction, scanning and transmission electron microscopies, IR spectroscopy, thermogravimetry, and Brunauer-Emmett-Teller measurements are employed to investigate their structures and compositions. Galvanostatic cell cycling and impedance spectroscopy are used to characterize the electrochemical properties of Mn 2 O 3 /Li cells. The results show that the hierarchical hollow structured (double-shelled, hollow and yolk-structured) Mn 2 O 3 anode materials deliver higher reversible capacities and excellent cycling stabilities than the solid Mn 2 O 3 . Moreover, among the three hierarchical hollow structured samples, the double shelled sample possesses the best cycling performance, especially at a high current density

Piezotronic Effect in Polarity-Controlled GaN Nanowires.

Science.gov (United States)

Zhao, Zhenfu; Pu, Xiong; Han, Changbao; Du, Chunhua; Li, Linxuan; Jiang, Chunyan; Hu, Weiguo; Wang, Zhong Lin

2015-08-25

Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.

Flexible three-dimensional electrodes of hollow carbon bead strings as graded sulfur reservoirs and the synergistic mechanism for lithium–sulfur batteries

Energy Technology Data Exchange (ETDEWEB)

Yang, Dan [College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 (China); Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang, 621900 (China); Ni, Wei, E-mail: niwei@iccas.ac.cn [Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang, 621900 (China); Cheng, Jianli; Wang, Zhuanpei; Wang, Ting; Guan, Qun [Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang, 621900 (China); Zhang, Yun, E-mail: y_zhang@scu.edu.cn [College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 (China); Wu, Hao [College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 (China); Li, Xiaodong [Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang, 621900 (China); Wang, Bin, E-mail: edward.bwang@gmail.com [Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang, 621900 (China)

2017-08-15

Graphical abstract: Flexible three-dimensional electrode comprised of stringed N-doped hollow carbon spheres shows a synergistic sulfur confinement mechanism and a higher energy/power density for the promising lithium-sulfur batteries compared with traditional electrodes. - Highlights: • Hollow carbon beads on string structure was first prepared. • Flexible 3D electrodes as graded reservoirs for polysulfides were conducted. • Synergistic effect for enhanced polysulfides storage was claimed. - Abstract: Three-dimensional (3D) flexible electrodes of stringed hollow nitrogen-doped (N-doped) carbon nanospheres as graded sulfur reservoirs and conductive frameworks were elaborately designed via a combination of the advantages of hollow structures, 3D electrodes and flexible devices. The as-prepared electrodes by a synergistic method of electrospinning, template sacrificing and activation for Li–S batteries without any binder or conductive additives but a 3D interconnected conductive network offered multiple transport paths for electrons and improved sulfur utilization and facilitated an easy access to Li{sup +} ingress/egress. With the increase of density of hollow carbon spheres in the strings, the self-supporting composite electrode reveals an enhanced synergistic mechanism for sulfur confinement and displays a better cycling stability and rate performance. It delivers a high initial specific capacity of 1422.6 mAh g{sup −1} at the current rate of 0.2C with the high sulfur content of 76 wt.%, and a much higher energy density of 754 Wh kg{sup −1} and power density of 1901 Wh kg{sup −1}, which greatly improve the energy/power density of traditional lithium–sulfur batteries and will be promising for further commercial applications.

Preparation of hollow hydroxyapatite microspheres by the conversion of borate glass at near room temperature

International Nuclear Information System (INIS)

Yao, Aihua; Ai, Fanrong; Liu, Xin; Wang, Deping; Huang, Wenhai; Xu, Wei

2010-01-01

Hollow hydroxyapatite microspheres, consisting of a hollow core and a porous shell, were prepared by converting Li 2 O-CaO-B 2 O 3 glass microspheres in dilute phosphate solution at 37 o C. The results confirmed that Li 2 O-CaO-B 2 O 3 glass was transformed to hydroxyapatite without changing the external shape and dimension of the original glass object. Scanning electron microscopy images showed the shell wall of the microsphere was built from hydroxyapatite particles, and these particles spontaneously align with one another to form a porous sphere with an interior cavity. Increase in phosphate concentration resulted in an increase in the reaction rate, which in turn had an effect on shell wall structure of the hollow hydroxyapatite microsphere. For the Li 2 O-CaO-B 2 O 3 glass microspheres reacted in low-concentration K 2 HPO 4 solution, lower reaction rate and a multilayered microstructure were observed. On the other hand, the glass microspheres reacted in higher phosphate solution converted more rapidly and produced a single hydroxyapatite layer. Furthermore, the mechanism of forming hydroxyapatite hollow microsphere was described.

GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.

Science.gov (United States)

Ansari, Azadeh; Liu, Che-Yu; Lin, Chien-Chung; Kuo, Hao-Chung; Ku, Pei-Cheng; Rais-Zadeh, Mina

2015-03-17

This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO₂) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient ( d 33 ) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF₂) etch and therefore eliminating the need for backside lithography and etching.

The Formation and Characterization of GaN Hexagonal Pyramids

Science.gov (United States)

Zhang, Shi-Ying; Xiu, Xiang-Qian; Lin, Zeng-Qin; Hua, Xue-Mei; Xie, Zi-Li; Zhang, Rong; Zheng, You-Dou

2013-05-01

GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {101¯1¯} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.

Gan-Hang tectonic belt and its geologic significance

International Nuclear Information System (INIS)

Deng Jiarui; Zhang Zhiping.

1989-01-01

Gan-Hang tectonic belt is predominantly controlled by Gan-Hang fracture zone. It is mainly composed of Yongfeng-Zhuji downwarping zone, Gan-Hang volcanic activity structural belt and Gan-Hang red basin downfaulted zone. Gan-Hang fracture zone is derived from evolution and development of Shaoxing-Jiangshan deep fracture. It is mainly composed of three deep and large fracture and Fuzhou-Yongfeng large fracture. The fracture zone is a long active belt, but in each active period the geologic structural patterns intensity, depth and forming time were not same. Gan-Hang tectonic belt possesses obvious inheritance. It has always maintained the character of the relative depression or low land since the Caledonian movement. This specific structural environment is favourable for uranium mineralization. At any rate, the formation of this uranium minerogenetic zone has been experiencing a long and complicated processes which were closely associated with long activity of Gan-Hang fracture zone

Electric field-assisted formation of organically modified hydroxyapatite (ormoHAP) spheres in carboxymethylated gelatin gels.

Science.gov (United States)

Heinemann, C; Heinemann, S; Kruppke, B; Worch, H; Thomas, J; Wiesmann, H P; Hanke, T

2016-10-15

A biomimetic strategy was developed in order to prepare organically modified hydroxyapatite (ormoHAP) with spherical shape. The technical approach is based on electric field-assisted migration of calcium ions and phosphate ions into a hydrogel composed of carboxymethylated gelatin. The electric field as well as the carboxymethylation using glucuronic acid (GlcA) significantly accelerates the mineralization process, which makes the process feasible for lab scale production of ormoHAP spheres and probably beyond. A further process was developed for gentle separation of the ormoHAP spheres from the gelatin gel without compromising the morphology of the mineral. The term ormoHAP was chosen since morphological analyses using electron microscopy (SEM, TEM) and element analysis (EDX, FT-IR, XRD) confirmed that carboxymethylated gelatin molecules use to act as organic templates for the formation of nanocrystalline HAP. The hydroxyapatite (HAP) crystals self-organize to form hollow spheres with diameters ranging from 100 to 500nm. The combination of the biocompatible chemical composition and the unique structure of the nanocomposites is considered to be a useful basis for future applications in functionalized degradable biomaterials. A novel bioinspired mineralization process was developed based on electric field-assisted migration of calcium and phosphate ions into biochemically carboxymethylated gelatin acting as organic template. Advantages over conventional hydroxyapatite include particle size distribution and homogeneity as well as achievable mechanical properties of relevant composites. Moreover, specifically developed calcium ion or phosphate ion release during degradation can be useful to adjust the fate of bone cells in order to manipulate remodeling processes. The hollow structure of the spheres can be useful for embedding drugs in the core, encapsulated by the highly mineralized outer shell. In this way, controlled drug release could be achieved, which enables

Implantation doping of GaN

International Nuclear Information System (INIS)

Zolper, J.C.

1996-01-01

Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of the III-Nitride materials, namely, GaN, AlN, InN and their alloys. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1,000 C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET)

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

International Nuclear Information System (INIS)

Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo

2014-01-01

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

Energy Technology Data Exchange (ETDEWEB)

Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-10-30

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.

A Review on Preparation Techniques of TiO2 Hollow Spheres and Their Applications in Dye-sensitized Solar Cell and Lithium Ion Battery%TiO2空心球制备及在染料敏化太阳能电池和锂离子电池中应用的研究进展∗

Institute of Scientific and Technical Information of China (English)

刘作花; 许秀玲; 周国伟

2016-01-01

空心球结构的半导体氧化物具有密度低、比表面积大、机械和热稳定性好等优点。空心球结构对 TiO2纳米材料的电化学性能有着显著的优化作用,TiO2空心球作为一种重要的半导体氧化物具有良好的物理和化学性质,在多种领域均表现出潜在的应用价值,制备大小和壳层数均可控的半导体TiO2空心球已引起了研究者的广泛关注。主要综述了在硬模板、软模板和无模板条件下TiO2空心球的制备方法；同时还介绍了其在染料敏化太阳能电池和锂离子电池方面的最新研究进展；最后,对TiO2空心球的可控合成前景进行了展望。%Semiconductor oxide materials with hollow spherical structures have attracted enormous attention due to their low density,large specific area,mechanical and thermal stability.As one of the important semiconductor oxide materials,TiO2 hollow spheres have excellent electrochemical properties.Owing to the excellent physical and chemical properties for potential application in multiple fields,design and synthesis of semiconductor TiO2 with tuna-ble size,shells and interior architecture have attracted great research interest.In this paper,the synthesis of TiO2 hol-low spheres in different methods,such as hard template,soft template and template-free methods are summarized. The progress of the applications of these materials in dye-sensitized solar cell and lithium ion battery are also dis-cussed.Finally,the future development of the controllable fabrication of TiO2 hollow spheres is looked forward.

Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi

2012-01-01

a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

GaN Nanowire Arrays for High-Output Nanogenerators

KAUST Repository

Huang, Chi-Te

2010-04-07

Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.

Silicon—a new substrate for GaN growth

Indian Academy of Sciences (India)

Unknown

of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the .... Considerable research is being carried out on GaN HEMTs at present. ... by InGaN/GaN multiquantum well in MOVPE was first.

α clustering with a hollow structure: Geometrical structure of α clusters from platonic solids to fullerene shape

Science.gov (United States)

Tohsaki, Akihiro; Itagaki, Naoyuki

2018-01-01

We study α -cluster structure based on the geometric configurations with a microscopic framework, which takes full account of the Pauli principle, and which also employs an effective internucleon force including finite-range three-body terms suitable for microscopic α -cluster models. Here, special attention is focused upon the α clustering with a hollow structure; all the α clusters are put on the surface of a sphere. All the platonic solids (five regular polyhedra) and the fullerene-shaped polyhedron coming from icosahedral structure are considered. Furthermore, two configurations with dual polyhedra, hexahedron-octahedron and dodecahedron-icosahedron, are also scrutinized. When approaching each other from large distances with these symmetries, α clusters create certain local energy pockets. As a consequence, we insist on the possible existence of α clustering with a geometric shape and hollow structure, which is favored from Coulomb energy point of view. Especially, two configurations, that is, dual polyhedra of dodecahedron-icosahedron and fullerene, have a prominent hollow structure compared with the other six configurations.

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

OpenAIRE

Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

2011-01-01

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

Dislocation-induced nanoparticle decoration on a GaN nanowire.

Science.gov (United States)

Yang, Bing; Yuan, Fang; Liu, Qingyun; Huang, Nan; Qiu, Jianhang; Staedler, Thorsten; Liu, Baodan; Jiang, Xin

2015-02-04

GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

Science.gov (United States)

Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

2018-05-01

Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

Synthesis of p-type GaN nanowires.

Science.gov (United States)

Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

2013-09-21

GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

Interaction of GaN epitaxial layers with atomic hydrogen

Energy Technology Data Exchange (ETDEWEB)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

2004-08-15

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

Interaction of GaN epitaxial layers with atomic hydrogen

International Nuclear Information System (INIS)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

2004-01-01

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

Induced defects in neutron irradiated GaN single crystals

International Nuclear Information System (INIS)

Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

2005-01-01

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

Energy Technology Data Exchange (ETDEWEB)

Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

2011-04-11

The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde

Polarization Raman spectroscopy of GaN nanorod bundles

International Nuclear Information System (INIS)

Tite, T.; Lee, C. J.; Chang, Y.-M.

2010-01-01

We performed polarization Raman spectroscopy on single wurtzite GaN nanorod bundles grown by plasma-assisted molecular beam epitaxy. The obtained Raman spectra were compared with those of GaN epilayer. The spectral difference between the GaN nanorod bundles and epilayer reveals the relaxation of Raman selection rules in these GaN nanorod bundles. The deviation of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules is attributed to both the orientation of the crystal axis with respect to the polarization vectors of incident and scattered light and the structural defects in the merging boundary of GaN nanorods. The presence of high defect density induced by local strain at the merging boundary was further confirmed by transmission electron microscopy. The averaged defect interspacing was estimated to be around 3 nm based on the spatial correlation model.

Computational study of GaAs1-xNx and GaN1-yAsy alloys and arsenic impurities in GaN

International Nuclear Information System (INIS)

Laaksonen, K; Komsa, H-P; Arola, E; Rantala, T T; Nieminen, R M

2006-01-01

We have studied the structural and electronic properties of As-rich GaAs 1-x N x and N-rich GaN 1-y As y alloys in a large composition range using first-principles methods. We have systematically investigated the effect of the impurity atom configuration near both GaAs and GaN sides of the concentration range on the total energies, lattice constants and bandgaps. The N (As) atoms, replacing substitutionally As (N) atoms in GaAs (GaN), cause the surrounding Ga atoms to relax inwards (outwards), making the Ga-N (Ga-As) bond length about 15% shorter (longer) than the corresponding Ga-As (Ga-N) bond length in GaAs (GaN). The total energies of the relaxed alloy supercells and the bandgaps experience large fluctuations within different configurations and these fluctuations grow stronger if the impurity concentration is increased. Substituting As atoms with N in GaAs induces modifications near the conduction band minimum, while substituting N atoms with As in GaN modifies the states near the valence band maximum. Both lead to bandgap reduction, which is at first rapid but later slows down. The relative size of the fluctuations is much larger in the case of GaAs 1-x N x alloys. We have also looked into the question of which substitutional site (Ga or N) As occupies in GaN. We find that under Ga-rich conditions arsenic prefers the substitutional N site over the Ga site within a large range of Fermi level values

Determination of carrier diffusion length in GaN

Science.gov (United States)

Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Gil, Bernard

2015-01-01

Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) and cross-sectional cathodoluminescence (CL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p-GaN or 1500 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photo-generation near the surface region by above bandgap excitation. Taking into consideration the absorption in the top GaN layer as well as active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be 93 ± 7 nm and 70 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively, at photogenerated carrier densities of 4.2 × 1018 cm-3 using PL spectroscopy. CL measurements of the unintentionally doped n-type GaN layer at much lower carrier densities of 1017 cm-3 revealed a longer diffusion length of 525 ± 11 nm at 6 K.

Schottky contacts to polar and nonpolar n-type GaN

Energy Technology Data Exchange (ETDEWEB)

Kim, Hogyoung [Hanbat National University, Daejeon (Korea, Republic of); Phark, Soohyon [Max-Planck-Institut fur Mikrostrukturphysik, Halle (Germany); Song, Keunman [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of); Kim, Dongwook [Ewha Woman' s University, Seoul (Korea, Republic of)

2012-01-15

Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Science.gov (United States)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

2011-07-15

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

GaN epitaxial layers grown on multilayer graphene by MOCVD

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

2018-04-01

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

The sphere-PAC fuel code 'SPHERE-3'

International Nuclear Information System (INIS)

Wallin, H.

2000-01-01

Sphere-PAC fuel is an advanced nuclear fuel, in which the cladding tube is filled with small fuel spheres instead of the more usual fuel pellets. At PSI, the irradiation behaviour of sphere-PAC fuel is calculated using the computer code SPHERE-3. The paper describes the present status of the SPHERE-3 code, and some results of the qualification process against experimental data. (author)

The sphere-pac fuel code 'SPHERE-3'

International Nuclear Information System (INIS)

Wallin, H.; Nordstroem, L.A.; Hellwig, C.

2001-01-01

Sphere-pac fuel is an advanced nuclear fuel, in which the cladding tube is filled with small fuel spheres instead of the more usual fuel pellets. At PSI, the irradiation behaviour of sphere-pac fuel is calculated using the computer code SPHERE-3. The paper describes the present status of the SPHERE-3 code, and some results of the qualification process against experimental data. (author)

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE 581 83 Linköping (Sweden)

2015-02-28

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

Zn-dopant dependent defect evolution in GaN nanowires

Science.gov (United States)

Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

2015-10-01

Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

Science.gov (United States)

Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2017-11-08

Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 10 7  cm -2 . Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.

Energetics of Mg incorporation at GaN(0001) and GaN(0001¯) surfaces

Science.gov (United States)

Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

2006-04-01

By using density functional calculations in the generalized gradient approximation, we investigate the energetics of Mg adsorption and incorporation at GaN(0001) and GaN(0001¯) surfaces under various Ga and Mg coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find significant differences in Mg incorporation between Ga- and N-polar surfaces. Mg incorporation is easier at the Ga-polar surface, but high Mg coverages are found to cause important distortions which locally change the polarity from Ga to N polar. At the N-rich and moderately Ga-rich GaN(0001) surface, 0.25 ML of Mg substituting Ga in the top bilayer strongly reduce the surface diffusion barriers of Ga and N adatoms, in agreement with the surfactant effect observed in experiments. As the Mg coverage exceeds 0.5 ML, partial incorporation in the subsurface region (second bilayer) becomes favorable. A surface structure with 0.5 ML of incorporated Mg in the top bilayer and 0.25 ML in the second bilayer is found to be stable over a wide range of Ga chemical potential. At the Ga bilayer-terminated GaN(0001) surface, corresponding to Ga-rich conditions, configurations where Mg is incorporated in the interface region between the metallic Ga bilayer and the underlying GaN bilayer appear to be favored. At the N-polar surface, Mg is not incorporated under N-rich or moderately Ga-rich conditions, whereas incorporation in the adlayer may take place under Ga-rich conditions. In the presence of light or electron beam induced excitation, energy differences between Mg incorporated at the surface and in deeper layers are reduced so that the tendency toward surface segregation is also reduced.

GaN transistors for efficient power conversion

CERN Document Server

Lidow, Alex; de Rooij, Michael; Reusch, David

2014-01-01

The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

International Nuclear Information System (INIS)

Hwang, Jih-Shang; Liu, Tai-Yan; Chen, Han-Wei; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-01-01

Enhanced photoelectrochemical (PEC) performances of Ga 2 O 3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga 2 O 3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga 2 O 3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga 2 O 3 . These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga 2 O 3 NWs, or by incorporation of indium to form InGaN NWs. (paper)

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

Science.gov (United States)

Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-02-08

Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

Science.gov (United States)

Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin

2017-04-20

Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH 3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001) GaN ∥(0001) sapphire and (101[combining macron]0) GaN ∥(112[combining macron]0) sapphire . Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Modeling the Electrostatics of Hollow Shell Suspensions: Ion Distribution, Pair Interactions, and Many-Body Effects.

Science.gov (United States)

Hallez, Yannick; Meireles, Martine

2016-10-11

Electrostatic interactions play a key role in hollow shell suspensions as they determine their structure, stability, thermodynamics, and rheology and also the loading capacity of small charged species for nanoreservoir applications. In this work, fast, reliable modeling strategies aimed at predicting the electrostatics of hollow shells for one, two, and many colloids are proposed and validated. The electrostatic potential inside and outside a hollow shell with a finite thickness and a specific permittivity is determined analytically in the Debye-Hückel (DH) limit. An expression for the interaction potential between two such hollow shells is then derived and validated numerically. It follows a classical Yukawa form with an effective charge depending on the shell geometry, permittivity, and inner and outer surface charge densities. The predictions of the Ornstein-Zernike (OZ) equation with this pair potential to determine equations of state are then evaluated by comparison to results obtained with a Brownian dynamics algorithm coupled to the resolution of the linearized Poisson-Boltzmann and Laplace equations (PB-BD simulations). The OZ equation based on the DLVO-like potential performs very well in the dilute regime as expected, but also quite well, and more surprisingly, in the concentrated regime in which full spheres exhibit significant many-body effects. These effects are shown to vanish for shells with small thickness and high permittivity. For highly charged hollow shells, we propose and validate a charge renormalization procedure. Finally, using PB-BD simulations, we show that the cell model predicts the ion distribution inside and outside hollow shells accurately in both electrostatically dilute and concentrated suspensions. We then determine the shell loading capacity as a function of salt concentration, volume fraction, and surface charge density for nanoreservoir applications such as drug delivery, sensing, or smart coatings.

StackGAN++: Realistic Image Synthesis with Stacked Generative Adversarial Networks

OpenAIRE

Zhang, Han; Xu, Tao; Li, Hongsheng; Zhang, Shaoting; Wang, Xiaogang; Huang, Xiaolei; Metaxas, Dimitris

2017-01-01

Although Generative Adversarial Networks (GANs) have shown remarkable success in various tasks, they still face challenges in generating high quality images. In this paper, we propose Stacked Generative Adversarial Networks (StackGAN) aiming at generating high-resolution photo-realistic images. First, we propose a two-stage generative adversarial network architecture, StackGAN-v1, for text-to-image synthesis. The Stage-I GAN sketches the primitive shape and colors of the object based on given...

Ab initio investigations of the strontium gallium nitride ternaries Sr 3GaN3 and Sr6GaN5: Promising materials for optoelectronic

KAUST Repository

Goumri-Said, Souraya

2013-05-31

Sr3GaN3 and Sr6GaN5 could be promising potential materials for applications in the microelectronics, optoelectronics and coating materials areas of research. We studied in detail their structural, elastic, electronic, optical as well as the vibrational properties, by means of density functional theory framework. Both of these ternaries are semiconductors, where Sr3GaN3 exhibits a small indirect gap whereas Sr6GaN5 has a large direct gap. Indeed, their optical properties are reported for radiation up to 40 eV. Charge densities contours, Hirshfeld and Mulliken populations, are reported to investigate the role of each element in the bonding. From the mechanical properties calculation, it is found that Sr6GaN5 is harder than Sr3GaN3, and the latter is more anisotropic than the former. The phonon dispersion relation, density of phonon states and the vibrational stability are reported from the density functional perturbation theory calculations. © 2013 IOP Publishing Ltd.

Role of the ganSPQAB Operon in Degradation of Galactan by Bacillus subtilis.

Science.gov (United States)

Watzlawick, Hildegard; Morabbi Heravi, Kambiz; Altenbuchner, Josef

2016-10-15

Bacillus subtilis possesses different enzymes for the utilization of plant cell wall polysaccharides. This includes a gene cluster containing galactan degradation genes (ganA and ganB), two transporter component genes (ganQ and ganP), and the sugar-binding lipoprotein-encoding gene ganS (previously known as cycB). These genes form an operon that is regulated by GanR. The degradation of galactan by B. subtilis begins with the activity of extracellular GanB. GanB is an endo-β-1,4-galactanase and is a member of glycoside hydrolase (GH) family 53. This enzyme was active on high-molecular-weight arabinose-free galactan and mainly produced galactotetraose as well as galactotriose and galactobiose. These galacto-oligosaccharides may enter the cell via the GanQP transmembrane proteins of the galactan ABC transporter. The specificity of the galactan ABC transporter depends on the sugar-binding lipoprotein, GanS. Purified GanS was shown to bind galactotetraose and galactotriose using thermal shift assay. The energy for this transport is provided by MsmX, an ATP-binding protein. The transported galacto-oligosaccharides are further degraded by GanA. GanA is a β-galactosidase that belongs to GH family 42. The GanA enzyme was able to hydrolyze short-chain β-1,4-galacto-oligosaccharides as well as synthetic β-galactopyranosides into galactose. Thermal shift assay as well as electrophoretic mobility shift assay demonstrated that galactobiose is the inducer of the galactan operon regulated by GanR. DNase I footprinting revealed that the GanR protein binds to an operator overlapping the -35 box of the σ(A)-type promoter of Pgan, which is located upstream of ganS IMPORTANCE: Bacillus subtilis is a Gram-positive soil bacterium that utilizes different types of carbohydrates, such as pectin, as carbon sources. So far, most of the pectin degradation systems and enzymes have been thoroughly studied in B. subtilis Nevertheless, the B. subtilis utilization system of galactan, which is

Optical and field emission properties of layer-structure GaN nanowires

Energy Technology Data Exchange (ETDEWEB)

Cui, Zhen [Science School, Xi’an University of Technology, Xi’an 710048 (China); School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048 (China); Li, Enling, E-mail: Lienling@xaut.edu.cn [Science School, Xi’an University of Technology, Xi’an 710048 (China); Shi, Wei; Ma, Deming [Science School, Xi’an University of Technology, Xi’an 710048 (China)

2014-08-15

Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

KAUST Repository

Wang, Ping

2017-01-18

Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

Switching a Nanocluster Core from Hollow to Non-hollow

KAUST Repository

Bootharaju, Megalamane Siddaramappa

2016-03-24

Modulating the structure-property relationship in atomically precise nanoclusters (NCs) is vital for developing novel NC materials and advancing their applications. While promising biphasic ligand-exchange (LE) strategies have been developed primarily to attain novel NCs, understanding the mechanistic aspects involved in tuning the core and the ligand-shell of NCs in such biphasic processes is challenging. Here, we design a single phase LE process that enabled us to elucidate the mechanism of how a hollow NC (e.g., [Ag44(SR)30]4-, -SR: thiolate) converts into a non-hollow NC (e.g., [Ag25(SR)18]-), and vice versa. Our study reveals that the complete LE of the hollow [Ag44(SPhF)30]4- NCs (–SPhF: 4-fluorobenzenethiolate) with incoming 2,4-dimethylbenzenethiol (HSPhMe2) induced distortions in the Ag44 structure forming the non-hollow [Ag25(SPhMe2)18]- by a disproportionation mechanism. While the reverse reaction of [Ag25(SPhMe2)18]- with HSPhF prompted an unusual dimerization of Ag25, followed by a rearrangement step that reproduces the original [Ag44(SPhF)30]4-. Remarkably, both the forward and the backward reactions proceed through similar size intermediates that seem to be governed by the boundary conditions set by the thermodynamic and electronic stability of the hollow and non-hollow metal cores. Furthermore, the resizing of NCs highlights the surprisingly long-range effect of the ligands which are felt by atoms far deep in the metal core, thus opening a new path for controlling the structural evolution of nanoparticles.

GaN and ZnO nanostructures

Energy Technology Data Exchange (ETDEWEB)

Fuendling, Soenke; Soekmen, Uensal; Behrends, Arne; Al-Suleiman, Mohamed Aid Mansur; Merzsch, Stephan; Li, Shunfeng; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, Braunschweig (Germany); Laehnemann, Jonas; Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

2010-10-15

GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide are taken, but the resulting lattice and thermal mismatches lead to increased defect densities which reduce the material quality. In contrast, nanostructures with high aspect ratio have lower defect densities as compared to layers. In this work, we give an overview on our results achieved on both ZnO as well as GaN based nanorods. ZnO nanostructures were grown by a wet chemical approach as well as by VPT on different substrates - even on flexible polymers. To compare the growth results we analyzed the structures by XRD and PL and show possible device applications. The GaN nano- and microstructures were grown by metal organic vapor phase epitaxy either in a self-organized process or by selective area growth for a better control of shape and material composition. Finally we take a look onto possible device applications, presenting our attempts, e.g., to build LEDs based on GaN nanostructures. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Gallium adsorption on (0001) GaN surfaces

International Nuclear Information System (INIS)

Adelmann, Christoph; Brault, Julien; Mula, Guido; Daudin, Bruno; Lymperakis, Liverios; Neugebauer, Joerg

2003-01-01

We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. Based on the experimental results we find that for substrate temperatures and Ga fluxes typically used in molecular-beam epitaxy of GaN, finite equilibrium Ga surface coverages can be obtained. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. In particular, we show that a large range of Ga fluxes exists, where 2.5±0.2 monolayers (in terms of the GaN surface site density) of Ga are adsorbed on the GaN surface. We further demonstrate that the structure of this adsorbed Ga film is in good agreement with the laterally contracted Ga bilayer model predicted to be most stable for strongly Ga-rich surfaces [Northrup et al., Phys. Rev. B 61, 9932 (2000)]. For lower Ga fluxes, a discontinuous transition to Ga monolayer equilibrium coverage is found, followed by a continuous decrease towards zero coverage; for higher Ga fluxes, Ga droplet formation is found, similar to what has been observed during Ga-rich GaN growth. The boundary fluxes limiting the region of 2.5 monolayers equilibrium Ga adsorption have been measured as a function of the GaN substrate temperature giving rise to a Ga/GaN adsorption phase diagram. The temperature dependence is discussed within an ab initio based growth model for adsorption taking into account the nucleation of Ga clusters. This model consistently explains recent contradictory results of the activation energy describing the critical Ga flux for the onset of Ga droplet formation during Ga-rich GaN growth [Heying et al., J. Appl. Phys. 88, 1855 (2000); Adelmann et al., J. Appl. Phys. 91, 9638 (2002).

Synthesis of GaN Nanorods by a Solid-State Reaction

Directory of Open Access Journals (Sweden)

Keyan Bao

2010-01-01

Full Text Available An atom-economical and eco-friendly chemical synthetic route was developed to synthesize wurtzite GaN nanorods by the reaction of NaNH2 and the as-synthesized orthorhombic GaOOH nanorods in a stainless steel autoclave at 600∘C. The lengths of the GaN nanorods are in the range of 400–600 nm and the diameters are about 80–150 nm. The process of orthorhombic GaOOH nanorods transformation into wurtzite GaN nanorods was investigated by powder X-ray diffraction (XRD and field emission scanning electron microscope (FESEM, indicating that the GaN product retained essentially the same basic topological morphology in contrast to that of the GaOOH precursor. It was found that rhombohedral Ga2O3 was the intermediate between the starting orthorhombic GaOOH precursor and the final wurtzite GaN product. The photoluminescence measurements reveal that the as-prepared wurtzite GaN nanorods showed strong blue emission.

Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires

International Nuclear Information System (INIS)

Wang, Zaien; Liu, Baodan; Yuan, Fang; Hu, Tao; Zhang, Guifeng; Dierre, Benjamin; Hirosaki, Naoto; Sekiguchi, Takashi; Jiang, Xin

2014-01-01

Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga 2 O 3 and Sb powders in NH 3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. Highlight: • Sb/P co-doped GaN nanowires were synthesized through a well-designed multi-channel chemical vapor deposition (CVD) process. • Sb/P co-doping leads to the crystallinity deterioration of GaN nanowires. • Sb/P co-doping caused the red-shift of GaN nanowires band-gap in UV range. • Compared with Sb doping, P atoms are more easy to incorporate into the GaN lattice

GaN Nanowires Synthesized by Electroless Etching Method

KAUST Repository

Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed

2012-01-01

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

Structural analysis of GaN using high-resolution X-ray diffraction at variable temperatures; Analyse struktureller Eigenschaften von GaN mittels hochaufloesender Roentgenbeugung bei variabler Messtemperatur

Energy Technology Data Exchange (ETDEWEB)

Roder, C.

2007-02-26

The main topic of this thesis was the study of stress phenomena in GaN layers by application of high-resolution X-ray diffractometry at variable measurement temperature. For this a broad spectrum of different GaN samples was studied, which extended from bulk GaN crystals as well as thick c-plane oriented HVPE-GaN layers on c-plane sapphire over laterlaly overgrown c-plane GaN Layers on Si(111) substrates toon-polar a-plnae GaN layers on r-plane sapphire. The main topic of the measurements was the determination of the lattice parameters. Supplementarily the curvature of the waver as well as the excitonic resosance energies were studied by means of photoluminescence respectively photoreflection spectroscopy. By the measurement of the temperature-dependent lattice parameters of different GaN bulk crystals for the first time a closed set of thermal-expansion coefficients of GaN was determined from 12 to 1205 K with large accuracy. Analoguously the thermal-expansion coefficents of the substrate material sapphire were determinde over a temperature range from 10 to 1166 K.

Hole-induced d"0 ferromagnetism enhanced by Na-doping in GaN

International Nuclear Information System (INIS)

Zhang, Yong; Li, Feng

2017-01-01

The d"0 ferromagnetism in wurtzite GaN is investigated by the first-principle calculations. It is found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga vacancy and Na doping can introduce holes into GaN. However, Ga vacancy has a high formation energy, and is thus unlikely to occur in a significant concentration. In contrast, Na doping has relatively low formation energy. Under N-rich growth condition, Na doping with a sufficient concentration can be achieved, which can induce half-metallic ferromagnetism in GaN. Moreover, the estimated Curie temperature of Na-doped GaN is well above the room temperature. - Highlights: • Hole-induced ferromagnetism in GaN is confirmed. • Both Ga Vacancy and Na-doping can introduce hole into GaN. • The concentration of Ga vacancy is too low to induce detectable ferromagnetism. • Na-doped GaN is a possible ferromagnet with a high curie-temperature.

Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles.

Science.gov (United States)

Braniste, Tudor; Tiginyanu, Ion; Horvath, Tibor; Raevschi, Simion; Cebotari, Serghei; Lux, Marco; Haverich, Axel; Hilfiker, Andres

2016-01-01

Nanotechnology is a rapidly growing and promising field of interest in medicine; however, nanoparticle-cell interactions are not yet fully understood. The goal of this work was to examine the interaction between endothelial cells and gallium nitride (GaN) semiconductor nanoparticles. Cellular viability, adhesion, proliferation, and uptake of nanoparticles by endothelial cells were investigated. The effect of free GaN nanoparticles versus the effect of growing endothelial cells on GaN functionalized surfaces was examined. To functionalize surfaces with GaN, GaN nanoparticles were synthesized on a sacrificial layer of zinc oxide (ZnO) nanoparticles using hydride vapor phase epitaxy. The uptake of GaN nanoparticles by porcine endothelial cells was strongly dependent upon whether they were fixed to the substrate surface or free floating in the medium. The endothelial cells grown on surfaces functionalized with GaN nanoparticles demonstrated excellent adhesion and proliferation, suggesting good biocompatibility of the nanostructured GaN.

Non-conductive nanomaterial enhanced electrochemical response in stripping voltammetry: The use of nanostructured magnesium silicate hollow spheres for heavy metal ions detection.

Science.gov (United States)

Xu, Ren-Xia; Yu, Xin-Yao; Gao, Chao; Jiang, Yu-Jing; Han, Dong-Dong; Liu, Jin-Huai; Huang, Xing-Jiu

2013-08-06

Nanostructured magnesium silicate hollow spheres, one kind of non-conductive nanomaterials, were used in heavy metal ions (HMIs) detection with enhanced performance for the first time. The detailed study of the enhancing electrochemical response in stripping voltammetry for simultaneous detection of ultratrace Cd(2+), Pb(2+), Cu(2+) and Hg(2+) was described. Electrochemical properties of modified electrodes were characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The operational parameters which have influence on the deposition and stripping of metal ions, such as supporting electrolytes, pH value, and deposition time were carefully studied. The anodic stripping voltammetric performance toward HMIs was evaluated using square wave anodic stripping voltammetry (SWASV) analysis. The detection limits achieved (0.186nM, 0.247nM, 0.169nM and 0.375nM for Cd(2+), Pb(2+), Cu(2+) and Hg(2+)) are much lower than the guideline values in drinking water given by the World Health Organization (WHO). In addition, the interference and stability of the modified electrode were also investigated under the optimized conditions. An interesting phenomenon of mutual interference between different metal ions was observed. Most importantly, the sensitivity of Pb(2+) increased in the presence of certain concentrations of other metal ions, such as Cd(2+), Cu(2+) and Hg(2+) both individually and simultaneously. The proposed electrochemical sensing method is thus expected to open new opportunities to broaden the use of SWASV in analysis for detecting HMIs in the environment. Copyright © 2013 Elsevier B.V. All rights reserved.

Optical properties of Mg doped p-type GaN nanowires

Science.gov (United States)

Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

2015-06-01

Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

Hydrothermal assisted synthesis of iron oxide-based magnetic silica spheres and their performance in magnetophoretic water purification

Energy Technology Data Exchange (ETDEWEB)

Caparros, C., E-mail: ccaparros@fisica.uminho.pt [Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Benelmekki, M.; Martins, P.M. [Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Xuriguera, E. [Facultat de Quimica, Universitat de Barcelona, 08028 Barcelona (Spain); Silva, C.J.R. [Departamento de Quimica, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Martinez, Ll.M. [Sepmag Technologies, Parc Tecnologic del Valles, 08290 Barcelona (Spain); Lanceros-Mendez, S. [Centro de Fisica, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

2012-08-15

Porous Magnetic Silica (PMS) spheres of about 400 nm diameter were synthesised by one-pot process using the classical Stber method combined with hydrothermal treatment. Maghemite nanoparticles ({gamma}-Fe{sub 2}O{sub 3}) were used as fillers and cetyltrimethylammonium bromide (CTAB) was used as templating agent. The application of the hydrothermal process (120 Degree-Sign C during 48 h) before the calcination leads to the formation of homogeneous and narrow size distribution PMS spheres. X-ray diffraction patterns (XRD), Infrared measurements (FTIR) and Transmission Electron microscopy (TEM) methods were used to determine the composition and morphology of the obtained PMS spheres. The results show a homogeneous distribution of the {gamma}-Fe{sub 2}O{sub 3} nanoparticles in the silica matrix with a 'hollow-like' morphology. Magnetophoresis measurements at 60 T m{sup -1} show a total separation time of the PMS spheres suspension of about 16 min. By using this synthesis method, the limitation of the formation of silica spheres without incorporation of magnetic nanoparticles is overcome. These achievements make this procedure interesting for industrial up scaling. The obtained PMS spheres were evaluated as adsorbents for Ni{sup 2+} in aqueous solution. Their adsorption capacity was compared with the adsorption capacity of magnetic silica spheres obtained without hydrothermal treatment before calcination process. PMS spheres show an increase of the adsorption capacity of about 15% of the initial dissolution of Ni{sup 2+} without the need to functionalize the silica surface. Highlights: Black-Right-Pointing-Pointer Homogeneous and controlled size porous magnetic silica spheres were obtained. Black-Right-Pointing-Pointer Magnetophoretic removing of Ni{sup 2+} processes was successfully preformed at HLGMF. Black-Right-Pointing-Pointer PMS show higher Ni{sup 2+} removing capacity than spheres without hydrothermal treatment. Black-Right-Pointing-Pointer PMS can be

Solvothermal synthesis and characterization of ceria with solid and hollow spherical and multilayered morphologies

International Nuclear Information System (INIS)

He, Lei; Li, Junping; Feng, Zhihai; Sun, Dongfeng; Wang, Tingyu; Li, Ruixing; Xu, Yaohui

2014-01-01

Highlights: • Various morphologies of CeO 2 are gotten by controlling the solvothermal conditions. • The various morphologies are synthesized without any template or surfactant. • The chemical mechanisms for the formation of the products in the solvothermal process are discussed. • The morphology evolution from solid spheres to multilayered structures is supposed. • The as-synthesized CeO 2 samples possess excellent adsorption capacities. - Abstract: Ceria powders with different morphologies were synthesized using a facile template-free solvothermal process combined with calcination. The influence of solvothermal temperature and time on the powder was studied. Solid spheres, hollow spheres, and multilayered structures were controlled by adjusting the solvothermal conditions. The possible mechanisms for the formation of the precursors under the solvothermal conditions employed and the evolution of the powder from solid spherical to multilayered structures were discussed. Ethylene glycol played a key role in the morphology evolution of the powder. Cerium catalyzed the Guerbet-like reaction and reacted with ethylene glycol to produce ceria (CeO 2 ), Ce(HCOO) 3 , and Ce(OH)CO 3 . The redox-assisted dissolution–recrystallization process significantly contributed to the morphology transformation from solid spheres to multilayered structures. Moreover, the samples synthesized at different temperatures for 24 h possessed excellent adsorption capacities towards the removal of acid orange 7 when compared with commercial ceria

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Directory of Open Access Journals (Sweden)

Moonsang Lee

2018-06-01

Full Text Available We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

Generation of sphere and shell laser fusion targets. Final report, October 1, 1976--November 30, 1977. Report No. 1-78

International Nuclear Information System (INIS)

Kim, K.

1978-01-01

The objective of this research is to investigate methods of fabricating sphere and shell laser fusion targets. A hollow hydrogen pellet generator has been constructed, and experiments have been performed to study the effects of system parameters on the production of hollow droplets. Techniques for coating hydrogen pellets with high Z material have been studied, and a system has been constructed to coat spherical solid hydrogen pellets with neon. A preliminary experiment has been performed to freeze the deuterium gas inside a glass microsphere using cold He gas jet. Based on this, two systems have been designed and are under construction to investigate methods of obtaining and retaining uniform D-T layer on the inside surface of a microsphere using cold gas jets

Growth of GaN micro/nanolaser arrays by chemical vapor deposition.

Science.gov (United States)

Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

2016-09-02

Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm(-2). The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

High surface hole concentration p-type GaN using Mg implantation

International Nuclear Information System (INIS)

Long Tao; Yang Zhijian; Zhang Guoyi

2001-01-01

Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 17 cm -3 ) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

N-doped hollow urchin-like anatase TiO2@C composite as a novel anode for Li-ion batteries

Science.gov (United States)

Xing, Yalan; Wang, Shengbin; Fang, Baizeng; Song, Ge; Wilkinson, David P.; Zhang, Shichao

2018-05-01

N-doped hollow urchin-like anatase TiO2 spheres (HUTSs) with carbon coating (HUTS@C) are prepared through a facile and scalable hydrothermal reaction followed by coating of polypyrrole and carbonization. The HUTS is composed of radially grown anatase nanorods and possesses an enhanced percentage of exposed {001} facets compared with P25 TiO2 nanoparticles. After the carbon coating, the HUTS@C retains the hollow nanostructure although covered with an N-doped carbon layer. As an anode for Li-ion batteries, the HUTS@C delivers a higher capacity of 165.1 mAh g-1 at 1C after 200 cycles and better rate capability (111.7 mAh g-1 at 10C) than the HUTS. Further electrochemical studies reveal that the HUTS@C has a better electrochemical reversibility, lower charge-transfer resistance, and higher Li-ion diffusion coefficient due to its unique nanosctructure including the hollow core, anatase phase of TiO2 microspheres with high exposed {001} facets and the N-doped carbon layer, which facilitates mass transport and enhances electrical conductivity.

Semipolar GaN grown on m-plane sapphire using MOVPE

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

2008-07-01

We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ultrathin 1T-phase MoS2 nanosheets decorated hollow carbon microspheres as highly efficient catalysts for solar energy harvesting and storage

KAUST Repository

Hsiao, Min-Chien

2017-02-08

The composite of MoS2 and hollow carbon sphere (MoS2@HCS) is prepared via a glucose-assisted one pot synthesis. The composite consists of hierarchical spheres with a diameter of 0.5–4 μm and these hollow spheres are decorated with a number of curled and interlaced MoS2 nanosheets. After the composite is subject to the lithium intercalation, the MoS2 is converted from 2H to 1T phase. In this current work, the activities of 1T-MoS2@HCS toward photocatalytic hydrogen evolution and the reduction of I3− in dye-sensitized solar cells (DSCs) are systemically investigated. When evaluated as the photocatalyst for hydrogen evolution, the amount of evolved hydrogen over 1T-MoS2@HCS can reach 143 μmol in 2 h, being 3.6 times higher than as-synthesized 2H-MoS2@HCS. Additionally, the 1T-MoS2@HCS can be employed as the counter electrode (CE) material in DSCs. The DSCs based on 1T-MoS2@HCS CE possesses the power conversion efficiency of 8.94%, being higher than that with 2H-MoS2@HCS CE (8.16%) and comparable to that with Pt CE (8.87%). Our study demonstrates that 1T-MoS2@HCS has a great potential as an inexpensive alternative to Pt catalysts.

Ultrathin 1T-phase MoS2 nanosheets decorated hollow carbon microspheres as highly efficient catalysts for solar energy harvesting and storage

KAUST Repository

Hsiao, Min-Chien; Chang, Chin-Yu; Niu, Li-Juan; Bai, Feng; Li, Lain-Jong; Shen, Hsin-Hui; Lin, Jeng-Yu; Lin, Tsung-Wu

2017-01-01

The composite of MoS2 and hollow carbon sphere (MoS2@HCS) is prepared via a glucose-assisted one pot synthesis. The composite consists of hierarchical spheres with a diameter of 0.5–4 μm and these hollow spheres are decorated with a number of curled and interlaced MoS2 nanosheets. After the composite is subject to the lithium intercalation, the MoS2 is converted from 2H to 1T phase. In this current work, the activities of 1T-MoS2@HCS toward photocatalytic hydrogen evolution and the reduction of I3− in dye-sensitized solar cells (DSCs) are systemically investigated. When evaluated as the photocatalyst for hydrogen evolution, the amount of evolved hydrogen over 1T-MoS2@HCS can reach 143 μmol in 2 h, being 3.6 times higher than as-synthesized 2H-MoS2@HCS. Additionally, the 1T-MoS2@HCS can be employed as the counter electrode (CE) material in DSCs. The DSCs based on 1T-MoS2@HCS CE possesses the power conversion efficiency of 8.94%, being higher than that with 2H-MoS2@HCS CE (8.16%) and comparable to that with Pt CE (8.87%). Our study demonstrates that 1T-MoS2@HCS has a great potential as an inexpensive alternative to Pt catalysts.

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

Science.gov (United States)

Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

2018-05-01

A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

Identification of deep levels in GaN associated with dislocations

International Nuclear Information System (INIS)

Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

2004-01-01

To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

High-quality GaN epitaxially grown on Si substrate with serpentine channels

Science.gov (United States)

Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

2018-06-01

A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

The sphere-PAC fuel code 'SPHERE-3'

Energy Technology Data Exchange (ETDEWEB)

Wallin, H

2000-07-01

Sphere-PAC fuel is an advanced nuclear fuel, in which the cladding tube is filled with small fuel spheres instead of the more usual fuel pellets. At PSI, the irradiation behaviour of sphere-PAC fuel is calculated using the computer code SPHERE-3. The paper describes the present status of the SPHERE-3 code, and some results of the qualification process against experimental data. (author)

The rising motion of spheres in structured fluids with yield stress

Science.gov (United States)

Mirzaagha, S.; Pasquino, R.; Iuliano, E.; D'Avino, G.; Zonfrilli, F.; Guida, V.; Grizzuti, N.

2017-09-01

The rising of spherical bodies in structured fluids with yield stress is studied. The system is a suspension of hydrogenated castor oil colloidal fibers in a surfactant micellar solution. The fiber network confers to the fluid a viscoelastic behavior, with a well-defined yield stress, which increases with increasing fiber concentration. Various fluids with different fiber contents are prepared and rheologically characterized. A home-made time-lapse photography setup is used to monitor the time evolution position of the spherical particles, and the rising motion of both hollow spheres and air bubbles, in the diameter range 65-550 μm, is measured. The experiments last as long as several weeks, corresponding to significantly low measured velocities. Finite element simulations are performed to support the experimental data, assuming both interfacial slip and no slip conditions. The fluid dynamic phenomenon is studied and discussed in terms of dimensionless numbers, such as yield ratio, Bingham number, and Stokes drag coefficient. The results are novel for the system (suspending medium and hollow spheres) and for the covered Bingham number range, which is extended over three orders of magnitude in comparison with already available literature results. Our values provide quantitative data of the mechanical properties (i.e., yield stress value) at very low shear rates, in a prohibitive range for a traditional rheometer, and agree with the macroscopic rheological response. Moreover, the important role of the power law index n of the Herschel-Bulkley model, used to fit the data, has been highlighted. Our results, based on a Bingham-like fluid, are compared with the experimental data already available with Carbopol, treated as a Herschel Bulkley fluid with n = 0.5. The results could have important implications in the fabric and personal care detergency, a technological area where many fluids have composition and show rheological properties similar to those considered in the

Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

Science.gov (United States)

Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

2017-01-01

For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100) and (111) are isotropic, while the Poisson’s ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap

Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals

Directory of Open Access Journals (Sweden)

Hongbo Qin

2017-12-01

Full Text Available For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson’s ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and <111>, respectively, while they are in the orientations <111> and <100> for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson’s ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson’s ratios at planes (100 and (111 are isotropic, while the Poisson’s ratio at plane (110 exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol−1 K−1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger

Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals.

Science.gov (United States)

Qin, Hongbo; Luan, Xinghe; Feng, Chuang; Yang, Daoguo; Zhang, Guoqi

2017-12-12

For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and , respectively, while they are in the orientations and for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson's ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson's ratios at planes (100) and (111) are isotropic, while the Poisson's ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol -1 K -1 , respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap. Densities of

High surface hole concentration p-type GaN using Mg implantation

CERN Document Server

Long Tao; Zhang Guo Yi

2001-01-01

Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

Direct growth of freestanding GaN on C-face SiC by HVPE.

Science.gov (United States)

Tian, Yuan; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng; Zhang, Lei; Dai, Yuanbin; Huo, Qin

2015-06-02

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.

Simultaneous chemical modification and structural transformation of Stöber silica spheres for integration of nanocatalysts

KAUST Repository

Yao, Kexin

2012-01-10

A synthetic approach has been devised to convert conventional Stöber silica (SiO 2) spheres into a new type of porous structural platform for supporting multicomponent catalysts. With this approach, we have first prepared zinc-doped SiO 2 (Zn-SiO 2) hollow spheres, on which zinc oxide (ZnO) phase and ruthenium (Ru) nanoparticles have been deposited and assembled sequentially in solution phase. A series of complex Ru/ZnO/Zn-SiO 2 nanocatalysts has been thus been integrated onto the zinc-doped SiO 2 supports after additional thermal treatment and reduction. To test their workability under harsh reactive environments, we have further evaluated the above prepared catalysts using arene hydrogenation as model reactions. These integrated nanocatalysts have shown superior activity, high robustness, and easy recovery in the studied heterogeneous catalysis. © 2011 American Chemical Society.

The 2018 GaN power electronics roadmap

Science.gov (United States)

Amano, H.; Baines, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R.; Charles, M.; Chen, Kevin J.; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; Merlyne De Souza, Maria; Decoutere, Stefaan; Di Cioccio, L.; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Häberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Boon Lee, Kean; Li, Xu; Marcon, Denis; März, Martin; McCarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E. M. S.; Oliver, Stephen; Palacios, Tomás; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hove, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao

2018-04-01

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

Understanding the Room Temperature Ferromagnetism in GaN Nanowires with Pd Doping

International Nuclear Information System (INIS)

Manna, S; De, S K

2011-01-01

We report the first synthesis and characterization of 4d transition metal palladium-doped GaN nanowires (NWs). Room temperature ferromagnetism has been observed in high quality Vapor Liquid Solid (VLS) epitaxy grown undoped n-type GaN nanowires. It was proposed that this type of magnetism is due to defects which are not observed in Bulk GaN because of large formation energy of defects in bulk GaN. Here we have successfully doped 4d transition metal Pd in GaN NWs. We find fairly strong and long-range ferromagnetic coupling between Pd substituted for Ga in GaN . The results suggest that 4d metals such as Pd may also be considered as candidates for ferromagnetic dopants in semiconductors.

TEM characterization of catalyst- and mask-free grown GaN nanorods

International Nuclear Information System (INIS)

Schowalter, M; Aschenbrenner, T; Kruse, C; Hommel, D; Rosenauer, A

2010-01-01

Catalyst- and mask-free grown GaN nanorods have been investigated using transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and energy filtered transmission electron microscopy (EFTEM). The nanorods were grown on nitridated r-plane sapphire substrates in a molecular beam epitaxy reactor. We investigated samples directly after the nitridation and after the overgrowth of the structure with GaN. High resolution transmission electron microscopy (HRTEM) and EFTEM revealed that AlN islands have formed due to nitridation. After overgrowth, the AlN islands could not be observed any more, neither by EFTEM nor by Z-contrast imaging. Instead, a smooth layer consisting of AlGaN was found. The investigation of the overgrown sample revealed that an a-plane GaN layer and GaN nanorods on top of the a-plane GaN have formed. The nanorods reduced from top of the a-plane GaN towards the a-plane GaN/sapphire interface suggesting that the nanorods originate at the AlN islands found after nitridation. However, this could not be shown unambiguously. The number of threading dislocations in the nanorods was very low. The analysis of the epitaxial relationship to the a-plane GaN showed that the nanorods grew along the [000-1] direction, and the [1-100] direction of the rods was parallel to the [0001] direction of the a-plane GaN.

Hollow-Core Fiber Lamp

Science.gov (United States)

Yi, Lin (Inventor); Tjoelker, Robert L. (Inventor); Burt, Eric A. (Inventor); Huang, Shouhua (Inventor)

2016-01-01

Hollow-core capillary discharge lamps on the millimeter or sub-millimeter scale are provided. The hollow-core capillary discharge lamps achieve an increased light intensity ratio between 194 millimeters (useful) and 254 millimeters (useless) light than conventional lamps. The capillary discharge lamps may include a cone to increase light output. Hollow-core photonic crystal fiber (HCPCF) may also be used.

Polarity Control of Heteroepitaxial GaN Nanowires on Diamond.

Science.gov (United States)

Hetzl, Martin; Kraut, Max; Hoffmann, Theresa; Stutzmann, Martin

2017-06-14

Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.

RenderGAN: Generating Realistic Labeled Data

Directory of Open Access Journals (Sweden)

Leon Sixt

2018-06-01

Full Text Available Deep Convolutional Neuronal Networks (DCNNs are showing remarkable performance on many computer vision tasks. Due to their large parameter space, they require many labeled samples when trained in a supervised setting. The costs of annotating data manually can render the use of DCNNs infeasible. We present a novel framework called RenderGAN that can generate large amounts of realistic, labeled images by combining a 3D model and the Generative Adversarial Network framework. In our approach, image augmentations (e.g., lighting, background, and detail are learned from unlabeled data such that the generated images are strikingly realistic while preserving the labels known from the 3D model. We apply the RenderGAN framework to generate images of barcode-like markers that are attached to honeybees. Training a DCNN on data generated by the RenderGAN yields considerably better performance than training it on various baselines.

High-Sensitivity GaN Microchemical Sensors

Science.gov (United States)

Son, Kyung-ah; Yang, Baohua; Liao, Anna; Moon, Jeongsun; Prokopuk, Nicholas

2009-01-01

Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

GaN membrane MSM ultraviolet photodetectors

Science.gov (United States)

Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

2006-12-01

GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

Surface chemistry and electronic structure of nonpolar and polar GaN films

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna, T.C. Shibin; Aggarwal, Neha; Gupta, Govind, E-mail: govind@nplindia.org

2015-08-01

Highlights: • Surface chemistry and electronic structure of polar and nonpolar GaN is reported. • Influence of polarization on electron affinity of p & np GaN films is investigated. • Correlation between surface morphology and polarity has been deduced. - Abstract: Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is reported. The effect of polarization on surface properties like surface states, electronic structure, chemical bonding and morphology has been investigated and correlated. It was observed that polarization lead to shifts in core level (CL) as well as valence band (VB) spectra. Angle dependent X-ray Photoelectron Spectroscopic analysis revealed higher surface oxide in polar GaN film compared to nonpolar GaN film. On varying the take off angle (TOA) from 0° to 60°, the Ga−O/Ga−N ratio varied from 0.11–0.23 for nonpolar and 0.17–0.36 for polar GaN film. The nonpolar film exhibited N-face polarity while Ga-face polarity was perceived in polar GaN film due to the inherent polarization effect. Polarization charge compensated surface states were observed on the polar GaN film and resulted in downward band bending. Ultraviolet photoelectron spectroscopic measurements revealed electron affinity and ionization energy of 3.4 ± 0.1 eV and 6.8 ± 0.1 eV for nonpolar GaN film and 3.8 ± 0.1 eV and 7.2 ± 0.1 eV for polar GaN film respectively. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with pits on polar GaN film. The nonpolar film on the other hand showed pyramidal structures having facets all over the surface.

Synthesis and superior lithium storage performances of hybrid hollow urchin-like silicate constructed by nanotubes wrapped in reduced graphene oxides

International Nuclear Information System (INIS)

Chen, Xuefang; Huang, Ying; Zhang, Kaichuang; Zhang, Xin; Wei, Chao

2017-01-01

Hybrid hollow urchin-like cobalt and copper silicate constructed by nanotubes encapsulated in graphene nanosheets composites were successfully prepared using graphene oxide as carrier and silica spheres as template, which were done through a well-known Stȍber process and a hydrothermal method. In fact, the synthesis of hybrid urchin-like silicate constructed by nanotubes through onestep hydrothermal reaction has rarely been reported.The electrochemical performances of the composites as lithium-ion battery anode materials were studiedfor the first time. As novel anode materials of Li-ion batteries, the special hollow urchin-like structure not only could facilitate the Li + diffusion and electron transport but alsocouldaccommodate the volume variation during the conversion reactions. In addition, the introduction of graphene can make the electrical conductivity better. Graphene wrapped hollow urchin-like silicate compositespossesses superior electrochemical cycling properties. The first discharge capacity is1955.2mAh/g with a current density of 300 mA/g. The unique well-designed configuration presents a beneficial method to synthesize efficient and high performance electrode materials for advanced power applications.

Conductivity based on selective etch for GaN devices and applications thereof

Science.gov (United States)

Zhang, Yu; Sun, Qian; Han, Jung

2015-12-08

This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

Science.gov (United States)

Kizilyalli, I. C.; Aktas, O.

2015-12-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

Thermodynamic analysis of Mg-doped p-type GaN semiconductor

International Nuclear Information System (INIS)

Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

2006-01-01

A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

Growth on nonpolar and semipolar GaN: The substrate dilemma

Energy Technology Data Exchange (ETDEWEB)

Wernicke, T.; Weyers, M. [Ferdinand-Braun-Institute, Berlin (Germany); Kneissl, M. [Ferdinand-Braun-Institute, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

2009-07-01

Growth of nonpolar and semipolar GaN is very promising for achieving green laser diodes (LDs). However, the choice of the substrate is a difficult one: Heteroepitaxial growth on sapphire, SiC, LiAlO{sub 2} yields GaN films with a poor surface quality and high defect densities. On the other hand non- and semipolar bulk GaN substrates provide excellent crystal quality, but are so far only available in very small sizes. In this paper hetero- and homoepitaxial growth is compared. For all heteroepitaxially grown semi- and nonpolar GaN layers threading dislocations (TD) and basal plane stacking faults (BSF) can be found. There are four possible mechanisms for the generation of BSF: Growth of the N-polar basal plane, formation during nucleation at substrate steps, formation at the coalescence front of differently stacked nucleation islands, and generation at planar defects occurring in m-plane GaN on LiAlO{sub 2}. BSF induce surface roughening and are associated with partial dislocations causing nonradiative recombination. Thus they affect the performance of devices. We show that BSFs and TDs can be reduced by epitaxial lateral overgrowth resulting in several micrometer wide defect free areas. However, for LEDs larger defect-free areas are required. GaN layers grown on bulk GaN substrates exhibit a high crystal quality, but show in many cases long-range surface structures with a height of {approx}1{mu}m.

Synthesis of morphology-controlled carbon hollow particles by carbonization of resorcinol-formaldehyde precursor microspheres and applications in lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Zhang Haijiao, E-mail: seaboyfang@163.com [Modern Manufacture Engineering Center, Heilongjiang Institute of Science and Technology, 150027 (China); Xu Huifang, E-mail: xuhf@hit.edu.cn [School of Chemical Engineering and Technology, Harbin Institute of Technology, 150001 (China); Zhao Can [Modern Manufacture Engineering Center, Heilongjiang Institute of Science and Technology, 150027 (China)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Resorcinol-formaldehyde hollow particles could be obtained by inverse suspension method. Black-Right-Pointing-Pointer The morphologies of RF carbon precursor particles could be controlled by adjusting the pH values of the RF precursor. Black-Right-Pointing-Pointer The prepared carbon hollow particles, which derived from resorcinol-formaldehyde, exhibited microporous properties. Black-Right-Pointing-Pointer The RF carbon microcapsules displayed excellent power property and cycle durability. - Abstract: The morphology-controlled carbon hollow particles, derived from resorcinol-formaldehyde (RF) particles, were prepared by using an (oil phase) O/(water phase) W/(oil phase) O inverse-emulsion system which was formed by adding RF precursor (water phase) to n-hexane (oil phase) with Span-80 as surfactant and the following carbonization. This simple method led to the formation of various morphologies of RF carbon precursor particles such as hollow spheres, bowl-like hollow structures, microcapsules, or solid microspheres by adjusting the pH values of the RF precursor. The synthesized carbon particles exhibited porous characters with the surface area of 659 m{sup 2} g{sup -1} and the total pore volume of 0.44 cm{sup 3} g{sup -1}. Additionally, the electrochemical behavior of the typical RF carbon particles in lithium-ion batteries revealed that the RF carbon microcapsules displayed a high initial discharge capacity of 1059 mAh g{sup -1} and stabilized at about 330 mAh g{sup -1}, indicating its excellent power property and cycle durability.

Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2013-09-01

Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

Synthesis and Raman scattering of GaN nanorings, nanoribbons and nanowires

Energy Technology Data Exchange (ETDEWEB)

Li, Z.J. [Academia Sinica, Beijing, BJ (China). Inst. of Physics; Northwestern Polytechnical Univ., Xian, SN (China). Dept. of Materials Science and Engineering; Chen, X.L.; Tu, Q.Y.; Yang, Z.; Xu, Y.P.; Hu, B.Q. [Academia Sinica, Beijing, BJ (China). Inst. of Physics; Li, H.J. [Northwestern Polytechnical Univ., Xian, SN (China). Dept. of Materials Science and Engineering

2001-05-01

Low-dimensional GaN materials, including nanorings, nanoribbons and smooth nanowires have been synthesized by reacting gallium and ammonia using Ag particles as a catalyst on the substrate of MgO single crystals. They were characterized by field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). EDX, XRD indicated that the low-dimensional nanomaterials were wurtzite GaN. New features are found in Raman scatterings for these low-dimensional GaN materials, which are different from the previous observations of GaN materials. (orig.)

GaN and LED structures grown on pre-patterned silicon pillar arrays

Energy Technology Data Exchange (ETDEWEB)

Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Merzsch, Stephan; Neumann, Richard; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvoigteiplatz 5-7, 10117 Berlin (Germany)

2010-01-15

GaN nanorods (or nanowires) have attracted great interest in a variety of applications, e.g. high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In contrast to the mostly investigated self-assembled growth of GaN nanorods, we performed GaN nanorod growth by pre-patterning of the Si substrates. The pattern was transferred to Si substrates by photolithography and cryo-temperature inductively-coupled plasma etching. These Si templates then were used for further GaN nanorod growth by metal-organic vapour phase epitaxy (MOVPE). The low temperature AlN nucleation layer had to be optimized since it differs from its 2D layer counterpart on the surface area and orientations. We found a strong influence of diffusion processes, i.e. the GaN grown on top of the Si nanopillars can deplete the GaN around the Si pillars. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the pyramidal GaN nanostructures and terminate. Cathodoluminescence measurements reveal a difference of In composition and/or thickness of InGaN quantum wells on the different facets of the pyramidal GaN nanostructures. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Red shift of near band edge emission in cerium implanted GaN

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar

2009-01-01

Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

Red shift of near band edge emission in cerium implanted GaN

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul; Ali, Akbar, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)

2009-02-21

Rare earth (RE) doping in GaN is a promising technology to control the optical properties. However, there are no reports on doping of cerium (Ce) into GaN, which is a very unique RE element. In this paper, we performed photoluminescence (PL) and optical transmission measurements on Ce-doped GaN for the first time. A significant red shift of about 120 meV was observed in the PL peak position of the donor bound excitons. This red shift of near band emission was corroborated by the red shift of the absorption edge related to GaN in the optical transmission measurements. This observation is attributed to the band gap narrowing in GaN heavily doped with Ce. The activation energy of the Ce-related shallow donor is found to be 21.9 meV in GaN.

Preparation and properties of hollow glass microspheres for use in laser fusion experiments

International Nuclear Information System (INIS)

Campbell, J.H.; Grens, J.Z.; Poco, J.F.

1983-01-01

We review the preparation of high quality, hollow-glass microspheres for use in laser driven fusion experiments at LLNL. The primary focus of this paper is on the liquid-droplet method for making glass spheres, which has been in use at LLNL for over six years. We have combined the results from previous studies with our current results to present a detailed description of the preparation and the composition and physical properties of the glass microspheres. We also present a mathematical model that simulates the microsphere formation process. Examples are given of the application of the model to study the effects of various process parameters

Preparation and properties of hollow glass microspheres for use in laser fusion experiments

Energy Technology Data Exchange (ETDEWEB)

Campbell, J.H.; Grens, J.Z.; Poco, J.F.

1983-11-01

We review the preparation of high quality, hollow-glass microspheres for use in laser driven fusion experiments at LLNL. The primary focus of this paper is on the liquid-droplet method for making glass spheres, which has been in use at LLNL for over six years. We have combined the results from previous studies with our current results to present a detailed description of the preparation and the composition and physical properties of the glass microspheres. We also present a mathematical model that simulates the microsphere formation process. Examples are given of the application of the model to study the effects of various process parameters.

Positron annihilation study of Pd contacts on impurity-doped GaN

International Nuclear Information System (INIS)

Lee, Jong-Lam; Kim, Jong Kyu; Weber, Marc H.; Lynn, Kelvin G.

2001-01-01

Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. [copyright] 2001 American Institute of Physics

Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

2014-08-01

GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

A Frontal Attack on Limiting Defects in GaN

National Research Council Canada - National Science Library

Morkoc, Hadis

2002-01-01

GaN community, particularly under the leadership of Drs. Wood, Win, and Litton, recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood...

The origin of the residual conductivity of GaN films on ferroelectric materials

Science.gov (United States)

Lee, Kyoung-Keun; Cai, Zhuhua; Ziemer, Katherine; Doolittle, William Alan

2009-08-01

In this paper, the origin of the conductivity of GaN films grown on ferroelectric materials was investigated using XPS, AES, and XRD analysis tools. Depth profiles confirmed the existence of impurities in the GaN film originating from the substrates. Bonding energy analysis from XPS and AES verified that oxygen impurities from the substrates were the dominant origin of the conductivity of the GaN film. Furthermore, Ga-rich GaN films have a greater chance of enhancing diffusion of lithium oxide from the substrates, resulting in more substrate phase separation and a wider inter-mixed region confirmed by XRD. Therefore, the direct GaN film growth on ferroelectric materials causes impurity diffusion from the substrates, resulting in highly conductive GaN films. Future work needs to develop non-conductive buffer layers for impurity suppression in order to obtain highly resistive GaN films.

Semi-polar GaN heteroepitaxy an high index Si-surfaces

Energy Technology Data Exchange (ETDEWEB)

Ravash, Roghaiyeh; Blaesing, Juergen; Hempel, Thomas; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg, FNW/IEP/AHE, Magdeburg (Germany)

2011-07-01

Due to the lack of GaN homosubstrates, the growth of GaN-based devices is usually performed on heterosubstrates as sapphire or SiC. These substrates are either insulating or expensive, and both unavailable in large diameters. Meanwhile, silicon can meet the requirements for a low price and thermally well conducting substrate and also enabling the integration of optoelectronic devices with Si-based electronics. Up to now, the good matching of hexagonal GaN with the three-fold symmetry of Si(111) greatly promotes the c-axis orientated growth of GaN on this surface plane. A large spontaneous and piezoelectric polarization oriented along the c-axis exists in such hexagonal structure leading to low efficiencies for thick quantum wells. The attention to the growth of non-polar or semi-polar GaN based epitaxial structures has been increased recently because of reducing the effect of the polarization fields in these growth directions. Therefore we studied semi-polar GaN epilayers grown by metalorganic vapor phase epitaxy on silicon substrates with different orientations from Si(211) to Si(711). We observed that AlN seeding layer growth time play a significant role in obtaining the different GaN texture.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

Science.gov (United States)

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-09-02

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

Combined use of lightweight magnetic Fe{sub 3}O{sub 4}-coated hollow glass spheres and electrically conductive reduced graphene oxide in an epoxy matrix for microwave absorption

Energy Technology Data Exchange (ETDEWEB)

Wang, Junpeng; Wang, Jun, E-mail: wgdfrp@whut.edu.cn; Zhang, Bin; Sun, Yu; Chen, Wei; Wang, Tao

2016-03-01

Epoxy resin based lightweight composites comprising Fe{sub 3}O{sub 4}-coated hollow glass spheres (HGS@Fe{sub 3}O{sub 4}) and reduced graphene oxide (RGO) were prepared. Impedance matching condition and electromagnetic wave attenuation characteristic are used for analysis of the reflection loss (RL) performance of the composites. Compared with pure HGS@Fe{sub 3}O{sub 4} and RGO composite, the −10 dB absorption bandwidth and the minimum RL of the hybrid composites are enhanced. RL values less than −10 dB are obtained in a wide frequency range and the corresponding bandwidth can reach up to 3.6 GHz when an appropriate absorber thickness is chosen. The density of the hybrid composite is in the range of 0.57–0.72 g/cm{sup 3}, which is attractive candidate for a new type of lightweight microwave absorber. - Highlights: • Lightweight composites comprising HGS@Fe{sub 3}O{sub 4} and RGO were prepared. • The RL less than −10 dB can reach up to 3.6 GHz with layer thickness of 2.5 mm. • The density of the composites is in the range of 0.57−0.72 g/cm{sup 3}.

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

International Nuclear Information System (INIS)

Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

2013-01-01

The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

Vertical GaN Devices for Power Electronics in Extreme Environments

Science.gov (United States)

2016-03-31

Vertical GaN Devices for Power Electronics in Extreme Environments Isik C. Kizilyalli (1), Robert J. Kaplar (2), O. Aktas (1), A. M. Armstrong (2...electronics applications. In this paper vertical p-n diodes and transistors fabricated on pseudo bulk low defect density (104 to 106 cm-2) GaN substrates are...discussed. Homoepitaxial MOCVD growth of GaN on its native substrate and being able to control doping has allowed the realization of vertical

Piezo-generator integrating a vertical array of GaN nanowires.

Science.gov (United States)

Jamond, N; Chrétien, P; Houzé, F; Lu, L; Largeau, L; Maugain, O; Travers, L; Harmand, J C; Glas, F; Lefeuvre, E; Tchernycheva, M; Gogneau, N

2016-08-12

We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm(-3). This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

International Nuclear Information System (INIS)

Kizilyalli, I C; Aktas, O

2015-01-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p–n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (10 4 to 10 6 cm −2 ) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 10 15 cm −3 . This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A  ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p–n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p–n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p–n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p–n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T −3/2 , consistent with a phonon scattering model. Also

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

Science.gov (United States)

Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

2018-01-01

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

Thermal Annealing induced relaxation of compressive strain in porous GaN structures

KAUST Repository

Ben Slimane, Ahmed; Najar, Adel; Ng, Tien Khee; Ooi, Boon S.

2012-01-01

The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation

Electronic and Optical Properties of Two-Dimensional GaN from First-Principles.

Science.gov (United States)

Sanders, Nocona; Bayerl, Dylan; Shi, Guangsha; Mengle, Kelsey A; Kioupakis, Emmanouil

2017-12-13

Gallium nitride (GaN) is an important commercial semiconductor for solid-state lighting applications. Atomically thin GaN, a recently synthesized two-dimensional material, is of particular interest because the extreme quantum confinement enables additional control of its light-emitting properties. We performed first-principles calculations based on density functional and many-body perturbation theory to investigate the electronic, optical, and excitonic properties of monolayer and bilayer two-dimensional (2D) GaN as a function of strain. Our results demonstrate that light emission from monolayer 2D GaN is blueshifted into the deep ultraviolet range, which is promising for sterilization and water-purification applications. Light emission from bilayer 2D GaN occurs at a similar wavelength to its bulk counterpart due to the cancellation of the effect of quantum confinement on the optical gap by the quantum-confined Stark shift. Polarized light emission at room temperature is possible via uniaxial in-plane strain, which is desirable for energy-efficient display applications. We compare the electronic and optical properties of freestanding two-dimensional GaN to atomically thin GaN wells embedded within AlN barriers in order to understand how the functional properties are influenced by the presence of barriers. Our results provide microscopic understanding of the electronic and optical characteristics of GaN at the few-layer regime.

Comb-drive GaN micro-mirror on a GaN-on-silicon platform

International Nuclear Information System (INIS)

Wang, Yongjin; Sasaki, Takashi; Wu, Tong; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl 2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform.

Determination of carrier diffusion length in p- and n-type GaN

Science.gov (United States)

Hafiz, Shopan; Metzner, Sebastian; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Gil, Bernard; Özgür, Ümit

2014-03-01

Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p- GaN or 1300 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photogeneration near the surface region by above bandgap excitation. Taking into consideration the absorption in the active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be about 92 ± 7 nm and 68 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively. Cross-sectional cathodoluminescence line-scan measurement was performed on a separate sample and the diffusion length in n-type GaN was measured to be 280 nm.

Application of Generative Adversarial Networks (GANs) to jet images

CERN Multimedia

CERN. Geneva

2017-01-01

https://arxiv.org/abs/1701.05927 We provide a bridge between generative modeling in the Machine Learning community and simulated physical processes in High Energy Particle Physics by applying a novel Generative Adversarial Network (GAN) architecture to the production of jet images -- 2D representations of energy depositions from particles interacting with a calorimeter. We propose a simple architecture, the Location-Aware Generative Adversarial Network, that learns to produce realistic radiation patterns from simulated high energy particle collisions. The pixel intensities of GAN-generated images faithfully span over many orders of magnitude and exhibit the desired low-dimensional physical properties (i.e., jet mass, n-subjettiness, etc.). We shed light on limitations, and provide a novel empirical validation of image quality and validity of GAN-produced simulations of the natural world. This work provides a base for further explorations of GANs for use in faster simulation in High Energy Particle Physics.

Synthesis of Y2O2S:Eu3+, Mg2+, Ti4+ hollow microspheres via homogeneous precipitation route

Directory of Open Access Journals (Sweden)

Peng-Fei Ai, Ying-Liang Liu, Li-Yuan Xiao, Hou-Jin Wang and Jian-Xin Meng

2010-01-01

Full Text Available A phosphorescent material in the form of Y2O2S:Eu3+, Mg2+, Ti4+ hollow microspheres was prepared by homogeneous precipitation using monodispersed carbon spheres as hard templates. Y2O3:Eu3+ hollow microspheres were first synthesized to serve as the precursor. Y2O2S:Eu3+, Mg2+, Ti4+ powders were obtained by calcinating the precursor in a CS2 atmosphere. The crystal structure, morphology and optical properties of the composites were characterized. X-ray diffraction measurements confirmed the purity of the Y2O2S phase. Electron microscopy observations revealed that the Y2O2S:Eu3+, Mg2+, Ti4+ particles inherited the hollow spherical shape from the precursor after being calcined in a CS2 atmosphere and that they had a diameter of 350–450 nm and a wall thickness of about 50–80 nm. After ultraviolet radiation at 265 or 325 nm for 5 min, the particles emitted strong red long-lifetime phosphorescence originating from Eu3+ ions. This phosphorescence is associated with the trapping of charge carriers by Ti4+ and Mg2+ ions.

Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires

Directory of Open Access Journals (Sweden)

Hongbin Cheng

2015-01-01

Full Text Available GaN nanowires were synthesized through the Ni-catalyzed chemical vapor deposition (CVD method using Ga2O3/GaN mixtures as gallium sources, and precursor-substrate distances were investigated as the important factor for the growth of GaN nanowires. The microstructure, composition, and photoluminescence property were characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra. The results showed that single crystalline GaN nanowires with the diameter of about 90 nm and the length up to tens of micrometers had been grown thickly across Si (100 substrates with uniform density. Moreover, the variations of the GaN nanowire morphology, density, and size were largely attributed to substrate positions which would influence Ga precursor density in the carrier gas, the saturation degree of gaseous reactants, and the catalyst activity, respectively, in the fabrication of GaN nanowires by the vapour liquid solid mechanism.

Mg doping and its effect on the semipolar GaN(1122) growth kinetics

International Nuclear Information System (INIS)

Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Pernot, J.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

2009-01-01

We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

Use of GaN as a Scintillating Ionizing Radiation Detector

Science.gov (United States)

Wensman, Johnathan; Guardala, Noel; Mathur, Veerendra; Alasagas, Leslie; Vanhoy, Jeffrey; Statham, John; Marron, Daniel; Millett, Marshall; Marsh, Jarrod; Currie, John; Price, Jack

2017-09-01

Gallium nitride (GaN) is a III/V direct bandgap semiconductor which has been used in light emitting diodes (LEDs) since the 1990s. Currently, due to a potential for increased efficiency, GaN is being investigated as a replacement for silicon in power electronics finding potential uses ranging from data centers to electric vehicles. In addition to LEDs and power electronics though, doped GaN can be used as a gamma insensitive fast neutron detector due to the direct band-gap, light propagation properties, and response to ionizing radiations. Investigation of GaN as a semiconductor scintillator for use in a radiation detection system involves mapping the response function of the detector crystal over a range of photon and neutron energies, and measurements of light generation in the GaN crystal due to proton, alpha, and nitrogen projectiles. In this presentation we discuss the measurements made to date, and plausible interpretations of the response functions. This work funded in part by the Naval Surface Warfare Center, Carderock Division In-house Laboratory Independent Research program.

Elaborate Manipulation for Sub-10 nm Hollow Catalyst Sensitized Heterogeneous Oxide Nanofibers for Room Temperature Chemical Sensors.

Science.gov (United States)

Jang, Ji-Soo; Choi, Seon-Jin; Koo, Won-Tae; Kim, Sang-Joon; Cheong, Jun Young; Kim, Il-Doo

2017-07-26

Room-temperature (RT) operation sensors are constantly in increasing demand because of their low power consumption, simple operation, and long lifetime. However, critical challenges such as low sensing performance, vulnerability under highly humid state, and poor recyclability hinder their commercialization. In this work, sub-10 nm hollow, bimetallic Pt-Ag nanoparticles (NPs) were successfully formed by galvanic replacement reaction in bioinspired hollow protein templates and sensitized on the multidimensional SnO 2 -WO 3 heterojunction nanofibers (HNFs). Formation of hollow, bimetallic NPs resulted in the double-side catalytic effect, rendering both surface and inner side chemical reactions. Subsequently, SnO 2 -WO 3 HNFs were synthesized by incorporating 2D WO 3 nanosheets (NSs) with 0D SnO 2 sphere by c-axis growth inhibition effect and fluid dynamics of liquid Sn during calcination. Hierarchically assembled HNFs effectively modulate surface depletion layer of 2D WO 3 NSs by electron transfers from WO 3 to SnO 2 stemming from creation of heterojunction. Careful combination of bimetallic catalyst NPs with HNFs provided an extreme recyclability under exhaled breath (95 RH%) with outstanding H 2 S sensitivity. Such sensing platform clearly distinguished between the breath of healthy people and simulated halitosis patients.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

International Nuclear Information System (INIS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Energy Technology Data Exchange (ETDEWEB)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

OpenAIRE

Pozina, Galia; Hemmingsson, Carl; Paskov, Plamen P.; Bergman, Peder; Monemar, Bo; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.

2008-01-01

Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra...

Modification of GaN(0001) growth kinetics by Mg doping

International Nuclear Information System (INIS)

Monroy, E.; Andreev, T.; Holliger, P.; Bellet-Amalric, E.; Shibata, T.; Tanaka, M.; Daudin, B.

2004-01-01

We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology

Thermal quenching of the yellow luminescence in GaN

Science.gov (United States)

Reshchikov, M. A.; Albarakati, N. M.; Monavarian, M.; Avrutin, V.; Morkoç, H.

2018-04-01

We observed varying thermal quenching behavior of the yellow luminescence band near 2.2 eV in different GaN samples. In spite of the different behavior, the yellow band in all the samples is caused by the same defect—the YL1 center. In conductive n-type GaN, the YL1 band quenches with exponential law, and the Arrhenius plot reveals an ionization energy of ˜0.9 eV for the YL1 center. In semi-insulating GaN, an abrupt and tunable quenching of the YL1 band is observed, where the apparent activation energy in the Arrhenius plot is not related to the ionization energy of the defect. In this case, the ionization energy can be found by analyzing the shift of the characteristic temperature of PL quenching with excitation intensity. We conclude that only one defect, namely, the YL1 center, is responsible for the yellow band in undoped and doped GaN samples grown by different techniques.

Mn doped GaN thin films and nanoparticles

Czech Academy of Sciences Publication Activity Database

Šofer, Z.; Sedmidubský, D.; Huber, Š.; Hejtmánek, Jiří; Macková, Anna; Fiala, R.

2012-01-01

Roč. 9, 8-9 (2012), s. 809-824 ISSN 1475-7435 R&D Projects: GA ČR GA104/09/0621 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : GaN nanoparticles * GaN thin films * manganese * transition metals * MOVPE * ion implantations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

Defect formation and magnetic properties of Co-doped GaN crystal and nanowire

International Nuclear Information System (INIS)

Shi, Li-Bin; Liu, Jing-Jing; Fei, Ying

2013-01-01

Theoretical calculation based on density functional theory (DFT) and generalized gradient approximation (GGA) has been carried out in studying defect formation and magnetic properties of Co doped GaN crystal and nanowire (NW). Co does not exhibit site preference in GaN crystal. However, Co occupies preferably surface sites in GaN NW. Transition level of the defect is also investigated in GaN crystal. We also find that Co Ga (S) in NW does not produce spin polarization and Co Ga (B) produces spontaneous spin polarization. Ferromagnetic (FM) and antiferromagnetic (AFM) couplings are analyzed by six different configurations. The results show that AFM coupling is more stable than FM coupling for Co doped GaN crystal. It is also found from Co doped GaN NW calculation that the system remains FM stability for majority of the configurations. Magnetic properties in Co doped GaN crystal can be mediated by N and Ga vacancies. The FM and AFM stability can be explained by Co 3d energy level coupling

Analysis for Heat Transfer in a High Current-Passing Carbon Nanosphere Using Nontraditional Thermal Transport Model.

Science.gov (United States)

Hol C Y; Chen, B C; Tsai, Y H; Ma, C; Wen, M Y

2015-11-01

This paper investigates the thermal transport in hollow microscale and nanoscale spheres subject to electrical heat source using nontraditional thermal transport model. Working as supercapacitor electrodes, carbon hollow micrometer- and nanometer-sized spheres needs excellent heat transfer characteristics to maintain high specific capacitance, long cycle life, and high power density. In the nanoscale regime, the prediction of heat transfer from the traditional heat conduction equation based on Fourier's law deviates from the measured data. Consequently, the electrical heat source-induced heat transfer characteristics in hollow micrometer- and nanometer-sized spheres are studied using nontraditional thermal transport model. The effects of parameters on heat transfer in the hollow micrometer- and nanometer-sized spheres are discussed in this study. The results reveal that the heat transferred into the spherical interior, temperature and heat flux in the hollow sphere decrease with the increasing Knudsen number when the radius of sphere is comparable to the mean free path of heat carriers.

Chemical lift-off of (11-22) semipolar GaN using periodic triangular cavities

Science.gov (United States)

Jeon, Dae-Woo; Lee, Seung-Jae; Jeong, Tak; Baek, Jong Hyeob; Park, Jae-Woo; Jang, Lee-Woon; Kim, Myoung; Lee, In-Hwan; Ju, Jin-Woo

2012-01-01

Chemical lift-off of (11-22) semipolar GaN using triangular cavities was investigated. The (11-22) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (11-22) semipolar GaN by hydride vapor phase epitaxy for a free-standing (11-22) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (11-22) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis.

MnO2@colloid carbon spheres nanocomposites with tunable interior architecture for supercapacitors

International Nuclear Information System (INIS)

Zhang, Yuxin; Dong, Meng; Zhu, Shijin; Liu, Chuanpu; Wen, Zhongquan

2014-01-01

Graphical abstract: - Highlights: • MnO 2 @CSs nanocomposites have been successfully synthesized in room temperature. • The composites exhibited three structures: core–shell, yolk–shell and hollow structure. • The yolk–shell structure exhibited a high specific capacitance and cycling stability. - Abstract: MnO 2 @colloid carbon spheres nanocomposites with tunable interior architecture have been synthesized by a facile and cost-effective strategy at room temperature. The structure and morphology of as-prepared nanocomposites were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), nitrogen adsorption, focused ion beam scanning electron microscopy (FIB/SEM) and high-resolution transmission electron microscopy (HRTEM). The as-obtained composites exhibited a three-dimensional architecture with core–shell, yolk–shell and hollow interior structure. Furthermore, the electrochemical properties of composites were evaluated by cycle voltammetric (CV) and galvanostatic charge–discharge measurements. The yolk–shell structure exhibited the optimized pseudocapacitance performance, revealing a specific capacitance (273 F g −1 ) with a good rate and cycling stability, owing to its unique structure and the poor crystallinity of MnO 2 nanofilms. Therefore, this facile synthetic strategy could be useful to design and synthesis of tunable nanostructures with enhanced supercapacitor behavior

Heteroepitaxial growth of basal plane stacking fault free a-plane GaN

Energy Technology Data Exchange (ETDEWEB)

Wieneke, Matthias; Hempel, Thomas; Noltemeyer, Martin; Witte, Hartmut; Dadgar, Armin; Blaesing, Juergen; Christen, Juergen; Krost, Alois [Otto-von-Guericke Universitaet Magdeburg, FNW/IEP, Magdeburg (Germany)

2010-07-01

Growth of light emitting quantum-wells based on a-plane GaN is a possibility to reduce or even to avoid polarization correlated luminescence red shift and reduction of radiative recombination efficiency. But until now heteroepitaxially grown a-plane GaN films are characterized by a poor crystalline quality expressed by a high density of basal plane stacking faults (BSF) and partial dislocations. We present Si doped a-plane GaN films grown on r-plane sapphire substrates by metal organic vapor phase epitaxy using high temperature AlGaN nucleation layers. FE-SEM images revealed three dimensionally grown GaN crystallites sized up to tenth micrometer in the basal plane and a few tenth micrometers along the c-axes. Though, the full width at half maxima of the X-ray diffraction {omega}-scans of the in-plane GaN(1 anti 100) and GaN(0002) Bragg reflections exhibited a very high crystal quality. Furthermore, luminescence spectra were dominated by near band gap emission, while there was no separated peak of the basal plane stacking fault. In summary we present heteroepitaxially grown a-plane GaN without an evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra.

Enhanced microwave absorption properties of MnO{sub 2} hollow microspheres consisted of MnO{sub 2} nanoribbons synthesized by a facile hydrothermal method

Energy Technology Data Exchange (ETDEWEB)

Wang, Yan; Han, Bingqian; Chen, Nan; Deng, Dongyang; Guan, Hongtao [Department of Materials Science and Engineering, Yunnan University, 650091, Kunming (China); Wang, Yude, E-mail: ydwang@ynu.edu.cn [Department of Materials Science and Engineering, Yunnan University, 650091, Kunming (China); Yunnan Province Key Lab of Micro-Nano Materials and Technology, Yunnan University, 650091, Kunming (China)

2016-08-15

MnO{sub 2} hollow microspheres consisted of nanoribbons were successfully fabricated via a facile hydrothermal method with SiO{sub 2} sphere templates. The crystal structure, morphology and microwave absorption properties in X and Ku band of the as-synthesized samples were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM) and a vector network analyzer. The results show that the three-dimensional (3D) hollow microspheres are assembled by ultra thin and narrow one-dimensional (1D) nanoribbons. A rational process for the formation of hollow microspheres is proposed. The 3D MnO{sub 2} hollow microspheres possess improved dielectric and magnetic properties than the 1D nanoribbons prepared by the same procedures with the absence of SiO{sub 2} hard templates, which are closely related to their special nanostructures. The MnO{sub 2} microspheres also show much better microwave absorption properties in X (8–12 GHz) and Ku (12–18 GHz) microwave band compared with 1D MnO{sub 2} nanoribbons. The minimum reflection loss of −40 dB for hollow microsphere can be observed at 14.2 GHz and reflection loss below −10 dB is 3.5 GHz with a thickness of only 4 mm. The possible mechanism for the enhanced microwave absorption properties is also discussed. - Graphical abstract: MnO{sub 2} hollow microspheres composed of nanoribbons show the excellent microwave absorption properties in X and Ku band. - Highlights: • MnO{sub 2} hollow microspheres consisted of MnO{sub 2} nanoribbons were successfully prepared. • MnO{sub 2} hollow microspheres possess good microwave absorption performances. • The excellent microwave absorption properties are in X and Ku microwave band. • Electromagnetic impedance matching is great contribution to absorption properties.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Science.gov (United States)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

The influence of Fe doping on the surface topography of GaN epitaxial material

International Nuclear Information System (INIS)

Cui Lei; Yin Haibo; Jiang Lijuan; Wang Quan; Feng Chun; Xiao Hongling; Wang Cuimei; Wang Xiaoliang; Gong Jiamin; Zhang Bo; Li Baiquan; Wang Zhanguo

2015-01-01

Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 10 19 cm −3 . High resistivity GaN epitaxial material which is 1 × 10 9 Ω·cm is achieved. (paper)

Atomic structures and mechanical properties of single-crystal GaN nanotubes

International Nuclear Information System (INIS)

Xu, B.; Lu, A.J.; Pan, B.C.; Yu, Q.X.

2005-01-01

An approach is proposed to theoretically construct a realistic single-crystal GaN nanotube at atomic scale. The generated atomic structures of the single-crystal GaN nanotubes match the structural aspects from experiment very well. Our energetic calculations show that a single-crystal GaN nanotube with [100]-oriented lateral facets is more stable than that with [110]-oriented lateral facets, when they have around the same wall thickness. For a specified orientation of the lateral facets on the single-crystal GaN nanotubes, the energetic stabilities of the tubes obey a P rule, in which P is the ratio of the number of four-coordinated atoms to the number of three-coordinated atoms. Furthermore, the Young's modulus of the considered GaN nanotubes decrease with increasing the ratio of the number of bulk atoms to the number of surface atoms in each type of tube. Our calculations and analysis demonstrate that the surface effect of a single-crystal nanotube enhances its Young's modulus significantly

Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on a GaN substrate by fast atom beam etching. The epitaxial growth of GaN by MBE is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures. The LEO of GaN produces novel GaN epitaxial structures which are dependent on the shape and the size of the processed GaN nanostructures. Periodic GaN hexagonal pyramids are generated inside the air holes, and GaN epitaxial strips with triangular section are formed in the grating region. This work provides a promising way for producing novel GaN-based devices by the LEO of GaN using the MBE technique

Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets

Directory of Open Access Journals (Sweden)

Yang-Zhe Su

2018-06-01

Full Text Available Gallium nitride (GaN is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases. The zinc-blende GaN has superior electronic and optical properties over wurtzite one. In this report, GaN nanodots can be fabricated by Ga metal droplets in ultra-high vacuum and then nitridation by nitrogen plasma. The size, shape, density, and crystal structure of GaN nanodots can be characterized by transmission electron microscopy. The growth parameters, such as pre-nitridation treatment on Si surface, substrate temperature, and plasma nitridation time, affect the crystal structure of GaN nanodots. Higher thermal energy could provide the driving force for the phase transformation of GaN nanodots from zinc-blende to wurtzite structures. Metastable zinc-blende GaN nanodots can be synthesized by the surface modification of Si (111 by nitrogen plasma, i.e., the pre-nitridation treatment is done at a lower growth temperature. This is because the pre-nitridation process can provide a nitrogen-terminal surface for the following Ga droplet formation and a nitrogen-rich condition for the formation of GaN nanodots during droplet epitaxy. The pre-nitridation of Si substrates, the formation of a thin SiNx layer, could inhibit the phase transformation of GaN nanodots from zinc-blende to wurtzite phases. The pre-nitridation treatment also affects the dot size, density, and surface roughness of samples.

A sulfur host based on titanium monoxide@carbon hollow spheres for advanced lithium-sulfur batteries.

Science.gov (United States)

Li, Zhen; Zhang, Jintao; Guan, Buyuan; Wang, Da; Liu, Li-Min; Lou, Xiong Wen David

2016-10-20

Lithium-sulfur batteries show advantages for next-generation electrical energy storage due to their high energy density and cost effectiveness. Enhancing the conductivity of the sulfur cathode and moderating the dissolution of lithium polysulfides are two key factors for the success of lithium-sulfur batteries. Here we report a sulfur host that overcomes both obstacles at once. With inherent metallic conductivity and strong adsorption capability for lithium-polysulfides, titanium monoxide@carbon hollow nanospheres can not only generate sufficient electrical contact to the insulating sulfur for high capacity, but also effectively confine lithium-polysulfides for prolonged cycle life. Additionally, the designed composite cathode further maximizes the lithium-polysulfide restriction capability by using the polar shells to prevent their outward diffusion, which avoids the need for chemically bonding all lithium-polysulfides on the surfaces of polar particles.

Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Hoffmann, Veit; Netzel, Carsten; Knauer, Arne; Weyers, Markus [FBH, Berlin (Germany); Ploch, Simon; Rass, Jens [Institute of Solid State Physics, TU Berlin (Germany); Schade, Lukas; Schwarz, Ulrich [IAF, Freiburg (Germany); Kneissl, Michael [FBH, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

2010-07-01

Recently a number of groups have reported laser diodes in the green spectral range on semi- and nonpolar GaN. Nevertheless the growth process on semipolar surfaces is not well understood. In this study 3.5 {mu} m thick MOVPE grown GaN layers on bulk m-plane, (11 anti 22), (10 anti 12), and (10 anti 11) GaN substrates were investigated. XRD rocking curves exhibit a FWHM of less than 150{sup ''}, indicating excellent crystalline quality. But the surface morphology exhibits hillocks with a height of 1 {mu}m and lateral extension of 150 {mu}m in many cases. Depending on the substrate orientation and the growth temperature different hillock shapes were observed. Morphology and luminescence data point to threading dislocations as formation sources. In QWs the hillock structure is reproduced in the emission intensity and wavelength distribution on (10 anti 11) but not on the m-plane surfaces. The hillocks could be eliminated for the semipolar planes (not for the m-plane) by increasing the reactor pressure and lowering the growth temperature. Hillock free separate confinement laser structures emitting at 405 nm feature a very homogeneous luminescence in micro-PL and show amplified spontaneous emission under high power stripe excitation. Furthermore the In incorporation was found to be highest in QWs on (10 anti 11).

Measurement of residual stress in a sphere by x-ray under the consideration of its penetration depth

International Nuclear Information System (INIS)

Doi, Osamu; Ukai, Takayoshi

1981-01-01

It was pointed out in the case of a plate that when stress gradient is large, the use of the X-ray with large penetration depth caused large measurement error. In this paper, the theoretical equations for measuring the residual stress in a sphere with X-ray, taking penetration depth into account, are proposed, and the example of application is shown. As the method of measuring the residual stress in a hollow sphere with X-ray, only the method of combining external surface removal and external surface irradiation is practically in use. It was assumed that a sphere is isotropic, and that the residual stress is a function of the radius only. First, the theory of measuring the residual stress in a sphere with X-ray taking penetration depth into account is explained, and the equations for calculating the residual stresses in tangential and radial directions are derived. As the example of applying this theory, the distribution of the residual stress in a steel ball for a ball bearing was measured with Cr characteristic X-ray. The ball of 30 mm diameter was made of high-carbon chromium bearing steel, grade 2, (JIS SUJ2) and quenched and tempered. The removal of the thin layer was made by chemical etching and electrolysis. The measured values and the calculated values are shown. (Kako, I.)

Preparation of TiO2 hollow fibers using poly(vinylidene fluoride) hollow fiber microfiltration membrane as a template

International Nuclear Information System (INIS)

Lu Haiqiang; Zhang Lixiong; Xing Weihong; Wang Huanting; Xu Nanping

2005-01-01

TiO 2 hollow fibers were successfully prepared by using poly(vinylidene fluoride) hollow fiber microfiltration membrane as a template. The preparation procedure includes repeated impregnation of the TiO 2 precursor in the pores of the polymeric membrane, and calcination to burn off the template, producing the TiO 2 hollow fibers. The TiO 2 hollow fibers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). TiO 2 hollow fibers with other structures, such as honeycomb monolith and spring, were also prepared by preshaping the polymeric membranes into the honeycomb structure and spring, respectively. The phase structure of the TiO 2 hollow fibers could be readily adjusted by changing the calcination temperature

Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots

International Nuclear Information System (INIS)

Bodiou, L.; Braud, A.; Doualan, J.-L.; Moncorge, R.; Park, J. H.; Munasinghe, C.; Steckl, A. J.; Lorenz, K.; Alves, E.; Daudin, B.

2009-01-01

A comparison is presented between Eu implanted and Eu in situ doped GaN thin films showing that two predominant Eu sites are optically active around 620 nm in both types of samples with below and above bandgap excitation. One of these sites, identified as a Ga substitutional site, is common to both types of Eu doped GaN samples despite the difference in the GaN film growth method and in the doping technique. High-resolution photoluminescence (PL) spectra under resonant excitation reveal that in all samples these two host-sensitized sites are in small amount compared to the majority of Eu ions which occupy isolated Ga substitutional sites and thus cannot be excited through the GaN host. The relative concentrations of the two predominant host-sensitized Eu sites are strongly affected by the annealing temperature for Eu implanted samples and by the group III element time opening in the molecular beam epitaxy growth. Red luminescence decay characteristics for the two Eu sites reveal different excitation paths. PL dynamics under above bandgap excitation indicate that Eu ions occupying a Ga substitutional site are either excited directly into the 5 D 0 level or into higher excited levels such as 5 D 1 , while Eu ions sitting in the other site are only directly excited into the 5 D 0 level. These differences are discussed in terms of the spectral overlap between the emission band of a nearby bound exciton and the absorption bands of Eu ions. The study of Eu doped GaN quantum dots reveals the existence of only one type of Eu site under above bandgap excitation, with Eu PL dynamics features similar to Eu ions in Ga substitutional sites

One-pot formation of SnO2 hollow nanospheres and α-Fe2O3@SnO2 nanorattles with large void space and their lithium storage properties

KAUST Repository

Chen, Jun Song

2009-01-01

In this work, uniform SnO2 hollow nanospheres with large void space have been synthesized by a modified facile method. The void space can be easily controlled by varying the reaction time. The formation of interior void space is based on an inside-out Ostwald ripening mechanism. More importantly, this facile one-pot process can be extended to fabricate rattle-type hollow structures using α-Fe2O3@SnO2 as an example. Furthermore, the electrochemical lithium storage properties have been investigated. It is found that α-Fe2O3@SnO 2 nanorattles manifest a much lower initial irreversible loss and higher reversible capacity compared to SnO2 hollow spheres. This interesting finding supports a general hypothesis that a synergistic effect between functional core and shell materials can lead to improved lithium storage capabilities. © The Royal Society of Chemistry 2009.

Catalyst-free combined synthesis of Zn/ZnO core/shell hollow microspheres and metallic Zn microparticles by thermal evaporation and condensation route

Energy Technology Data Exchange (ETDEWEB)

Khan, Waheed S. [Research Centre of Materials Science, Beijing Institute of Technology, Beijing 100081 (China); Cao Chuanbao, E-mail: cbcao@bit.edu.c [Research Centre of Materials Science, Beijing Institute of Technology, Beijing 100081 (China); Nabi, Ghulam; Yao Ruimin; Bhatti, Sajjad H. [Research Centre of Materials Science, Beijing Institute of Technology, Beijing 100081 (China)

2010-09-17

Research highlights: {yields} Catalyst-free combined synthesis of metal/semiconductor Zn/ZnO core/shell microspheres with hollow interiors on Si substrate and metallic Zn polygonal microparticles on glass substrate in a single experiment via thermal evaporation and condensation technique was reported. The Zn/ZnO hollow microspheres were observed to have dimensions in the range of 70-80 {mu}m whereas metallic Zn microparticles with polygonal cross section and oblate spherical shape were found to be of 8-10 {mu}m. Some of the Zn/ZnO core/shell hollow spheres were also observed to have single crystalline ZnO pointed rods in extremely low density grown on the outer shell. A vapor-liquid-solid (VLS) process based growth mechanism was proposed for the formation of Zn/ZnO core/shell microspheres with hollow interior. The optical properties of Zn/ZnO core/shell microspheres were investigated by measuring the photoluminescence (PL) spectra at room temperature (RT). Two very strong emission bands were observed at 373 and 469 nm in the ultraviolet and visible regions respectively under excitation wavelength of 325 nm. Also the effect of the various excitation wavelengths on the PL behaviour was studied at room temperature. PL studies of Zn/ZnO core/shell microspheres show the promise of the material for applications in UV and blue light optical devices. - Abstract: Here we report catalyst-free combined synthesis of metal/semiconductor Zn/ZnO core/shell microspheres with hollow interiors on Si substrate and metallic Zn polygonal microparticles on glass substrate in a single experiment via thermal evaporation and condensation technique using nitrogen (N{sub 2}) as carrier agent at 800 {sup o}C for 120 min. The Zn/ZnO hollow microspheres were observed to have dimensions in the range of 70-80 {mu}m whereas metallic Zn microparticles with polygonal cross section and oblate spherical shape were found to be of 8-10 {mu}m. Some of the Zn/ZnO core/shell hollow spheres were also

Doping of GaN by ion implantation: Does It Work?

International Nuclear Information System (INIS)

Suvkhanov, A.; Wu, W.; Price, K.; Parikh, N.; Irene, E.; Hunn, J.; Thomson, D.; Davis, R.F.; Krasnobaev, L.

1998-04-01

Epitaxially grown GaN by metal organic chemical vapor deposition (MOCVD) on SiC were implanted with 100 keV Si + (for n-type) and 80 keV Mg + (for p-type) with various fluences from 1 x 10 12 to 7 x 10 15 ions/cm 2 at liquid nitrogen temperature (LT), room temperature (RT), and 700 C (HT). High temperature (1,200 C and 1,500 C) annealing was carried out after capping the GaN with epitaxial AlN by MOCVD to study damage recovery. Samples were capped by a layer of AlN in order to protect the GaN surface during annealing. Effects of implant temperature, damage and dopant activation are critically studied to evaluate a role of ion implantation in doping of GaN. The damage was studied by Rutherford Backscattering/Channeling, spectroscopic ellipsometry and photoluminescence. Results show dependence of radiation damage level on temperature of the substrate during implantation: implantations at elevated temperatures up to 550 C decrease the lattice disorder; hot implants above 550 C can not be useful in doping of GaN due to nitrogen loss from the surface. SE measurements have indicated very high sensitivity to the implantation damage. PL measurements at LT of 80 keV Mg + (5 x 10 14 cm 2 ) implanted and annealed GaN showed two peaks: one ∼ 100 meV and another ∼ 140 meV away from the band edge

Infrared reflectance of GaN films grown on Si(001) substrates

International Nuclear Information System (INIS)

Zhang, Xiong; Hou, Yong-Tian; Feng, Zhe-Chuan; Chen, Jin-Li

2001-01-01

GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon. [copyright] 2001 American Institute of Physics

Individual GaN nanowires exhibit strong piezoelectricity in 3D.

Science.gov (United States)

Minary-Jolandan, Majid; Bernal, Rodrigo A; Kuljanishvili, Irma; Parpoil, Victor; Espinosa, Horacio D

2012-02-08

Semiconductor GaN NWs are promising components in next generation nano- and optoelectronic systems. In addition to their direct band gap, they exhibit piezoelectricity, which renders them particularly attractive in energy harvesting applications for self-powered devices. Nanowires are often considered as one-dimensional nanostructures; however, the electromechanical coupling leads to a third rank tensor that for wurtzite crystals (GaN NWs) possesses three independent coefficients, d(33), d(13), and d(15). Therefore, the full piezoelectric characterization of individual GaN NWs requires application of electric fields in different directions and measurements of associated displacements on the order of several picometers. In this Letter, we present an experimental approach based on scanning probe microscopy to directly quantify the three-dimensional piezoelectric response of individual GaN NWs. Experimental results reveal that GaN NWs exhibit strong piezoelectricity in three dimensions, with up to six times the effect in bulk. Based on finite element modeling, this finding has major implication on the design of energy harvesting systems exhibiting unprecedented levels of power density production. The presented method is applicable to other piezoelectric NW materials as well as wires manufactured along different crystallographic orientations. © 2011 American Chemical Society

Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

International Nuclear Information System (INIS)

Okada, Narihito; Tadatomo, Kazuyuki

2012-01-01

Nonpolar and semipolar GaN layers with markedly improved crystalline quality can be obtained by selective-area growth from the sapphire sidewalls of patterned sapphire substrates (PSSs). In this paper, we review the crystalline qualities of GaN layers grown on PSSs and their growth mechanism. We grew semipolar {1 1 −2 2} and {1 0 −1 1} GaN layers on r- and n-PSSs. The crystalline qualities of the GaN layers grown on the PSSs were higher than those of GaN layers grown directly on heteroepitaxial substrates. To reveal the growth mechanism of GaN layers grown on PSSs, we also grew various nonpolar and semipolar GaN layers such as m-GaN on a-PSS, {1 1 −2 2} GaN on r-PSS, {1 0 − 1  1} GaN on n-PSS, m-GaN on c-PSS and a-GaN on m-PSS. It was found that the nucleation of GaN on the c-plane-like sapphire sidewall results in selective growth from the sapphire sidewall, and nonpolar or semipolar GaN can be obtained. Finally, we demonstrated a light-emitting diode fabricated on a {1 1 −2 2} GaN layer grown on an r-PSS. (paper)

N-polar GaN epitaxy and high electron mobility transistors

International Nuclear Information System (INIS)

Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

2013-01-01

This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

Structural effects of field emission from GaN nanofilms on SiC substrates

Energy Technology Data Exchange (ETDEWEB)

Chen, Cheng-Cheng; Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn; Zhu, Man-Kang; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing 100124 (China); Liu, Peng [Department of Physics Tsinghua University, Tsinghua-Foxconn Nanotechnology Research Center, Beijing 100084 (China); Wang, Bi-Ben [College of Chemistry and Chemical Engineering, Chongqing University of Technology, Chongqing 400054 (China)

2014-04-21

GaN nanofilms (NFs) with different structures are grown on SiC substrates by pulsed laser deposition under different conditions. The synthesized GaN NFs are studied by X-ray diffraction, field-emission (FE) scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The GaN NFs are composed of diversified GaN nanoparticles with a diameter of 9–38 nm, thickness of 10–50 nm, and roughness of 0.22–13.03 nm. FE from the GaN NFs is structure dependent, which is explained by stress changing the band gap of the NFs. By structure modulation, the turn-on field of GaN NFs can be as low as 0.66 V/μm at a current density of 1 μA/cm{sup 2}, with a current density of up to 1.1 mA/cm{sup 2} at a field of 4.18 V/μm. Fowler-Nordheim curves of some samples contain multiple straight lines, which originate from the structural change and diversification of GaN nanoparticles under an applied field. Overall, our results suggest that GaN NFs with excellent FE properties can be prepared on SiC substrates, which provides a new route to fabricate high-efficiency FE nanodevices.

Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN.

Science.gov (United States)

Jang, Dongsoo; Jue, Miyeon; Kim, Donghoi; Kim, Hwa Seob; Lee, Hyunkyu; Kim, Chinkyo

2018-03-07

On an SiO 2 -patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at the boundary of the circular openings. After etching of N-polar GaN on the circular openings by H 3 PO 4 , this template was coated with 40-nm Si by sputtering and was slightly etched by KOH. After slight etching, a thin layer of Si left on the circular openings of sapphire,but not on GaN, was oxidized during thermal annealing and served as a dielectric mask during subsequent regrowth. Thus, the subsequent growth of GaN was made only on the existing Ga-polar GaN domains, not on the circular openings of the sapphire substrate. Transmission electron microscopy analysis revealed no sign of threading dislocations in this film. This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO 2 -patterned sapphire.

Amphoteric arsenic in GaN

CERN Document Server

Wahl, U; Araújo, J P; Rita, E; Soares, JC

2007-01-01

We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive $^{73}$As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As$\\scriptstyle_{Ga}\\,$ " anti-sites ” are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called “ miscibility gap ” in ternary GaAs$\\scriptstyle_{1-x}$N$\\scriptstyle_{x}$ compounds, which cannot be grown with a single phase for values of $x$ in the range 0.1<${x}$< 0.99.

Polarity analysis of GaN nanorods by photo-assisted Kelvin probe force microscopy

Energy Technology Data Exchange (ETDEWEB)

Wei, Jiandong; Neumann, Richard; Wang, Xue; Li, Shunfeng; Fuendling, Soenke; Merzsch, Stephan; Al-Suleiman, Mohamed A.M.; Soekmen, Uensal; Wehmann, Hergo-H.; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany)

2011-07-15

Polarity dependence (N-polar (000-1) and Ga-polar (0001)) of surface photovoltage of epitaxially grown, vertically aligned GaN nanorods has been investigated by photo-assisted Kelvin probe force microscopy (KPFM). Commercial GaN substrates with known polarities are taken as reference samples. The polarity of GaN substrates can be well distinguished by the change in surface photovoltage upon UV illumination in air ambient. These different behaviors of Ga- and N-polar surfaces are attributed to the polarity-related surface-bound charges and photochemical reactivity. GaN nanorods were grown on patterned SiO{sub 2}/sapphire templates by metal-organic vapor phase epitaxy (MOVPE). In order to analyze the bottom surface of the grown GaN nanorods, a technique known from high power electronics and joining techniques is applied to remove the substrate. The top and bottom surfaces of the GaN nanorods are identified to be N-polar and Ga-polar according to the KPFM results, respectively. Our experiments demonstrate that KPFM is a simple and suitable method capable to identify the polarity of GaN nanorods. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Stage of GAN (Grupo de Analise do Nucleo) calculus methodology

International Nuclear Information System (INIS)

Silva, C.F. da.

1987-11-01

This Technical Note presents the stage of GAN Calculus Methodology in areas of Neutronics, Fuel Rod Performance and Fission Products Inventory. Proposals of GAN's members are presented and analyzed for each of these areas and a work schedule is established. (author)

Rare earths in GaN and ZnO studied with the PAC method; Seltene Erden in GaN und ZnO untersucht mit der PAC-Methode

Energy Technology Data Exchange (ETDEWEB)

Nedelec, R.

2007-07-01

The present thesis deals with the implantation and annealing behaviour of two examples of large-band-gap semiconductors GaN and ZnO. The studies begin with the annealing behaviour of GaN after the implantation of {sup 172}Lu. For GaN the annealing process begins at low temperatures with the decreasing of the damping of the lattice frequency. At essentially higher temperatures finally the substitunial contribution increases. This behaviour is also observed for other probe nuclei in GaN. For ZnO the behaviour at low temperature is different. Both for {sup 172}Lu and for {sup 181}Hf the damping is already after the implantation very low. The increasement of the substitutional contribution occurs like in GaN at higher temperatures. Thereafter for GaN and ZnO PAC spectra were token up at different measurement temperatures between 25 and 873 K. For {sup 172}Lu in GaN and in ZnO a strong temperature dependence of the lattice field gradient was observed. Also for {sup 181}Hf in ZnO a strong temperature dependence is observed. For {sup 172}Lu by means of a model for the interaction of quadrupole moments of electronic shells with the nucleus a lattice field gradient of {+-}5.9.10{sup 15} Vcm{sup -2} could be determined. For {sup 172}Lu in ZnO the model yields at 293 K a lattice field gradient of +14.10{sup 15} Vcm{sup -2} respectively -13.10{sup 15} Vcm{sup -2}. The corrsponding measurement with {sup 181}Hf yields a lattice field gradient of {+-}5.7.10{sup 15} Vcm{sup -2}.

Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery

International Nuclear Information System (INIS)

San, Haisheng; Yao, Shulin; Wang, Xiang; Cheng, Zaijun; Chen, Xuyuan

2013-01-01

The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8 μm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×10 15 cm −3 , by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics. - Highlights: • Ni-63 is employed as the pure beta radioisotope source. • The Schottky junction betavoltaic battery is based on the wide-band gap semiconductor GaN. • The total energy deposition of incident beta particles in GaN was simulated by the Monte Carlo method. • A Fe-doped compensation technique is suggested to increase the energy conversion efficiency

Photoconductive GaN UV Detectors

National Research Council Canada - National Science Library

Baranowski, Jacek

1999-01-01

This report results from a contract tasking University of Warsaw as follows: The contractor will investigate the growth of GaN material using atmospheric pressure metalorganic chemical vapor deposition method (MOCVD...

Impact of substrate off-angle on the m-plane GaN Schottky diodes

Science.gov (United States)

Yamada, Hisashi; Chonan, Hiroshi; Takahashi, Tokio; Shimizu, Mitsuaki

2018-04-01

We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal-organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward [000\\bar{1}]. The surface of the GaN epitaxial layers on the 0.1°-off substrate consisted of pyramidal hillocks and contained oxygen (>1017 cm-3) and carbon (>1016 cm-3) impurities. The residual carbon and oxygen impurities decreased to current of the 0.1°-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1°. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.

Hollow Micro-/Nanostructures: Synthesis and Applications

KAUST Repository

Lou, Xiong Wen (David)

2008-11-03

Hollow micro-nanostructures are of great interest in many current and emerging areas of technology. Perhaps the best-known example of the former is the use of fly-ash hollow particles generated from coal power plants as partial replacement for Portland cement, to produce concrete with enhanced strength and durability. This review is devoted to the progress made in the last decade in synthesis and applications of hollow micro-nanostructures. We present a comprehensive overview of synthetic strategies for hollow structures. These strategies are broadly categorized into four themes, which include well-established approaches, such as conventional hard-templating and soft-templating methods, as well as newly emerging methods based on sacrificial templating and template-free synthesis. Success in each has inspired multiple variations that continue to drive the rapid evolution of the field. The Review therefore focuses on the fundamentals of each process, pointing out advantages and disadvantages where appropriate. Strategies for generating more complex hollow structures, such as rattle-type and nonspherical hollow structures, are also discussed. Applications of hollow structures in lithium batteries, catalysis and sensing, and biomedical applications are reviewed. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA,.

MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

Energy Technology Data Exchange (ETDEWEB)

Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

2010-09-01

100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

International Nuclear Information System (INIS)

Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

2014-01-01

One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis

Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

International Nuclear Information System (INIS)

Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2010-01-01

Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

Fabrication and Characterization of Mg-Doped GaN Nanowires

International Nuclear Information System (INIS)

Dong-Dong, Zhang; Cheng-Shan, Xue; Hui-Zhao, Zhuang; Ying-Long, Huang; Zou-Ping, Wang; Ying, Wang; Yong-Fu, Guo

2008-01-01

Mg-doped GaN nanowires have been synthesized by ammoniating Ga 2 O 3 films doped with Mg under flowing ammonia atmosphere at 850° C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photo-luminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20–30 nm and the lengths are 50–100 μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45 eV, 3.26 eV, 2.95 eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein–Moss effect. The peak at 3.26 eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly. (cross-disciplinary physics and related areas of science and technology)

Influence of ammonia flow rate for improving properties of polycrystalline GaN

Science.gov (United States)

Ariff, A.; Ahmad, M. A.; Hassan, Z.; Zainal, N.

2018-06-01

Post-annealing treatment in ammonia ambient is widely accepted for GaN material, but less works have been done to investigate the influence of the ammonia (NH3) flow rate for reducing the N-deficiency as well as improving the quality of the material. In this work, we investigated the influence of NH3 flow rate at 1, 2, 3, and 4 slm in improving properties of a ∼1 μm thick polycrystalline GaN layer. Our simulation work suggested that the uniformity of temperature and pressure gradient of the NH3 gas did not lead to the reduction of N-deficiency of the polycrystalline GaN layer. Instead, it was found that the mitigation of the N-deficiency was strongly influenced by the fluid velocity of the NH3 gas, which had passed over the layer. Either at lower or higher fluid velocity, the chance for the active N atoms to incorporate into the GaN lattice structure was low. Therefore, the N-deficiency on the polycrystalline GaN layer could not be minimized under these conditions. As measured by EDX, the N atoms incorporation was the most effective when the NH3 flow rate at 3 slm, suggesting the flow rate significantly improved the N-deficiency of the polycrystalline GaN layer. Furthermore, it favored the formation of larger hexagonal faceted grains, with the smallest FWHM of XRD peaks from the GaN diffractions in (10 1 bar 0), (0002) and (10 1 bar 1) orientations, while allowing the polycrystalline GaN layer to show sharp and intense emissions peak of NBE in a PL spectrum.

Ab initio-based approach to reconstruction, adsorption and incorporation on GaN surfaces

International Nuclear Information System (INIS)

Ito, T; Akiyama, T; Nakamura, K

2012-01-01

Reconstruction, adsorption and incorporation on various GaN surfaces are systematically investigated using an ab initio-based approach that predicts the surface phase diagram as functions of temperature and beam-equivalent pressure (BEP). The calculated results for GaN surface reconstructions with polar (0 0 0 1), nonpolar (1 1 −2 0), semipolar (1 −1 0 1) and semipolar (1 1 −2 2) orientations imply that reconstructions on GaN surfaces with Ga adlayers generally appear on the polar and the semipolar surfaces, while the stable ideal surface without Ga adsorption is found on the nonpolar GaN(1 1 −2 0) surface because it satisfies the electron counting rule. The hydrogen adsorption on GaN(0 0 0 1) and GaN(1 1 −2 0) realizes several surface structures forming N–H and Ga–NH 2 bonds on their surfaces that depend on temperature and Ga BEP during metal-organic vapor-phase epitaxy (MOVPE). In contrast, the stable structures due to hydrogen adsorption on the semipolar GaN(1 −1 0 1) and GaN(1 1 −2 2) surfaces are not varied over the wide range of temperature and Ga BEP. This implies that the hydrogen adsorbed stable structures are expected to emerge on the semipolar surfaces during MOVPE regardless of the growth conditions. Furthermore, we clarify that Mg incorporation on GaN(1 −1 0 1) surfaces is enhanced by hydrogen adsorption consistent with experimental findings

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE.

Science.gov (United States)

Lee, Moonsang; Mikulik, Dmitry; Yang, Mino; Park, Sungsoo

2017-08-17

We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kyle, Erin C. H., E-mail: erinkyle@umail.ucsb.edu; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wu, Yuh-Renn [Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan (China)

2014-05-21

The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimized GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

Science.gov (United States)

Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

2017-10-01

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions

Energy Technology Data Exchange (ETDEWEB)

Li, Shunfeng; Fuendling, Soenke; Wang, Xue; Erenburg, Milena; Al-Suleiman, Mohamed Aid Mansur; Wei, Jiandong; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Bergbauer, Werner [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany); Strassburg, Martin [Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

2011-07-15

Selective area growth of GaN nanorods by metalorganic vapor phase epitaxy is highly demanding for novel applications in nano-optoelectronic and nanophotonics. Recently, we report the successful selective area growth of GaN nanorods in a continuous-flow mode. In this work, as examples, we show the morphology dependence of GaN rods with {mu}m or sub-{mu}m in diameters on growth conditions. Firstly, we found that the nitridation time is critical for the growth, with an optimum from 90 to 180 seconds. This leads to more homogeneous N-polar GaN rods growth. A higher temperature during GaN rod growth tends to increase the aspect ratio of the GaN rods. This is due to the enhanced surface diffusion of growth species. The V/III ratio is also an important parameter for the GaN rod growth. Its increase causes reduction of the aspect ratio of GaN rods, which could be explained by the relatively lower growth rate on (000-1) N-polar top surface than it on {l_brace}1-100{r_brace} m-planes by supplying more NH{sub 3} (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Luminescence evolution of porous GaN thin films prepared via UV-assisted electrochemical etching

International Nuclear Information System (INIS)

Cheah, S.F.; Lee, S.C.; Ng, S.S.; Yam, F.K.; Abu Hassan, H.; Hassan, Z.

2015-01-01

Porous gallium nitride (GaN) thin films with different surface morphologies and free carriers properties were fabricated from Si-doped GaN thin films using ultra-violet assisted electrochemical etching approach under various etching voltages. Fluctuation of luminescence signals was observed in the photoluminescence spectra of porous GaN thin films. Taking advantage of the spectral sensitivity of infrared attenuated total reflection spectroscopy on semiconductor materials, roles of free carriers and porous structure in controlling luminescence properties of GaN were investigated thoroughly. The results revealed that enhancement in luminescence signal is not always attained upon porosification. Although porosification is correlated to the luminescence enhancement, however, free carrier is the primary factor to enhance luminescence intensity. Due to unavoidable significant reduction of free carriers from Si-doped GaN in the porosification process, control of etching depth (i.e., thickness of porous layer formed from the Si-doped layer) is critical in fabricating porous GaN thin film with enhanced luminescence response. - Highlights: • Various pore morphologies with free carrier properties are produced by Si-doped GaN. • Free carriers are important to control the luminescence signal of porous GaN. • Enhancement of luminescence signal relies on the pore depth of Si-doped layer

Oxygen adsorption and incorporation at irradiated GaN(0001) and GaN(0001¯) surfaces: First-principles density-functional calculations

Science.gov (United States)

Sun, Qiang; Selloni, Annabella; Myers, T. H.; Doolittle, W. Alan

2006-11-01

Density functional theory calculations of oxygen adsorption and incorporation at the polar GaN(0001) and GaN(0001¯) surfaces have been carried out to explain the experimentally observed reduced oxygen concentration in GaN samples grown by molecular beam epitaxy in the presence of high energy (˜10keV) electron beam irradiation [Myers , J. Vac. Sci. Technol. B 18, 2295 (2000)]. Using a model in which the effect of the irradiation is to excite electrons from the valence to the conduction band, we find that both the energy cost of incorporating oxygen impurities in deeper layers and the oxygen adatom diffusion barriers are significantly reduced in the presence of the excitation. The latter effect leads to a higher probability for two O adatoms to recombine and desorb, and thus to a reduced oxygen concentration in the irradiated samples, consistent with experimental observations.

Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

Science.gov (United States)

Fujikura, Hajime; Konno, Taichiro; Suzuki, Takayuki; Kitamura, Toshio; Fujimoto, Tetsuji; Yoshida, Takehiro

2018-06-01

On the basis of a novel crystal hardness control, we successfully realized macrodefect-free, large (2–6 in.) and thick +c-oriented GaN bulk crystals by hydride vapor phase epitaxy. Without the hardness control, the introduction of macrodefects including inversion domains and/or basal-plane dislocations seemed to be indispensable to avoid crystal fracture in GaN growth with millimeter thickness. However, the presence of these macrodefects tended to limit the applicability of the GaN substrate to practical devices. The present technology markedly increased the GaN crystal hardness from below 20 to 22 GPa, thus increasing the available growth thickness from below 1 mm to over 6 mm even without macrodefect introduction. The 2 and 4 in. GaN wafers fabricated from these crystals had extremely low dislocation densities in the low- to mid-105 cm‑2 range and low off-angle variations (2 in.: <0.1° 4 in.: ∼0.2°). The realization of such high-quality 6 in. wafers is also expected.

Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

International Nuclear Information System (INIS)

Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

2015-01-01