Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

Science.gov (United States)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

Effects of density imbalance on the BCS-BEC crossover in semiconductor electron-hole bilayers

International Nuclear Information System (INIS)

Pieri, P.; Strinati, G. C.; Neilson, D.

2007-01-01

We study the occurrence of excitonic superfluidity in electron-hole bilayers at zero temperature. We not only identify the crossover in the phase diagram from the BCS limit of overlapping pairs to the BEC limit of nonoverlapping tightly bound pairs but also, by varying the electron and hole densities independently, we can analyze a number of phases that occur mainly in the crossover region. With different electron and hole effective masses, the phase diagram is asymmetric with respect to excess electron or hole densities. We propose, as the criterion for the onset of superfluidity, the jump of the electron and hole chemical potentials when their densities cross

Linked-cluster formulation of electron-hole interaction kernel in real-space representation without using unoccupied states.

Science.gov (United States)

Bayne, Michael G; Scher, Jeremy A; Ellis, Benjamin H; Chakraborty, Arindam

2018-05-21

Electron-hole or quasiparticle representation plays a central role in describing electronic excitations in many-electron systems. For charge-neutral excitation, the electron-hole interaction kernel is the quantity of interest for calculating important excitation properties such as optical gap, optical spectra, electron-hole recombination and electron-hole binding energies. The electron-hole interaction kernel can be formally derived from the density-density correlation function using both Green's function and TDDFT formalism. The accurate determination of the electron-hole interaction kernel remains a significant challenge for precise calculations of optical properties in the GW+BSE formalism. From the TDDFT perspective, the electron-hole interaction kernel has been viewed as a path to systematic development of frequency-dependent exchange-correlation functionals. Traditional approaches, such as MBPT formalism, use unoccupied states (which are defined with respect to Fermi vacuum) to construct the electron-hole interaction kernel. However, the inclusion of unoccupied states has long been recognized as the leading computational bottleneck that limits the application of this approach for larger finite systems. In this work, an alternative derivation that avoids using unoccupied states to construct the electron-hole interaction kernel is presented. The central idea of this approach is to use explicitly correlated geminal functions for treating electron-electron correlation for both ground and excited state wave functions. Using this ansatz, it is derived using both diagrammatic and algebraic techniques that the electron-hole interaction kernel can be expressed only in terms of linked closed-loop diagrams. It is proved that the cancellation of unlinked diagrams is a consequence of linked-cluster theorem in real-space representation. The electron-hole interaction kernel derived in this work was used to calculate excitation energies in many-electron systems and results

Electron vortex magnetic holes: A nonlinear coherent plasma structure

Energy Technology Data Exchange (ETDEWEB)

Haynes, Christopher T., E-mail: c.t.haynes@qmul.ac.uk; Burgess, David; Sundberg, Torbjorn [School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Camporeale, Enrico [Multiscale Dynamics, Centrum Wiskunde and Informatica (CWI), Amsterdam (Netherlands)

2015-01-15

We report the properties of a novel type of sub-proton scale magnetic hole found in two dimensional particle-in-cell simulations of decaying turbulence with a guide field. The simulations were performed with a realistic value for ion to electron mass ratio. These structures, electron vortex magnetic holes (EVMHs), have circular cross-section. The magnetic field depression is associated with a diamagnetic azimuthal current provided by a population of trapped electrons in petal-like orbits. The trapped electron population provides a mean azimuthal velocity and since trapping preferentially selects high pitch angles, a perpendicular temperature anisotropy. The structures arise out of initial perturbations in the course of the turbulent evolution of the plasma, and are stable over at least 100 electron gyroperiods. We have verified the model for the EVMH by carrying out test particle and PIC simulations of isolated structures in a uniform plasma. It is found that (quasi-)stable structures can be formed provided that there is some initial perpendicular temperature anisotropy at the structure location. The properties of these structures (scale size, trapped population, etc.) are able to explain the observed properties of magnetic holes in the terrestrial plasma sheet. EVMHs may also contribute to turbulence properties, such as intermittency, at short scale lengths in other astrophysical plasmas.

Generation of Electron Whistler Waves at the Mirror Mode Magnetic Holes: MMS Observations and PIC Simulation

Science.gov (United States)

Ahmadi, N.; Wilder, F. D.; Usanova, M.; Ergun, R.; Argall, M. R.; Goodrich, K.; Eriksson, S.; Germaschewski, K.; Torbert, R. B.; Lindqvist, P. A.; Le Contel, O.; Khotyaintsev, Y. V.; Strangeway, R. J.; Schwartz, S. J.; Giles, B. L.; Burch, J.

2017-12-01

The Magnetospheric Multiscale (MMS) mission observed electron whistler waves at the center and at the gradients of magnetic holes on the dayside magnetosheath. The magnetic holes are nonlinear mirror structures which are anti-correlated with particle density. We used expanding box Particle-in-cell simulations and produced the mirror instability magnetic holes. We show that the electron whistler waves can be generated at the gradients and the center of magnetic holes in our simulations which is in agreement with MMS observations. At the nonlinear regime of mirror instability, the proton and electron temperature anisotropy are anti-correlated with the magnetic hole. The plasma is unstable to electron whistler waves at the minimum of the magnetic field structures. In the saturation regime of mirror instability, when magnetic holes are dominant, electron temperature anisotropy develops at the edges of the magnetic holes and electrons become isotropic at the magnetic field minimum. We investigate the possible mechanism for enhancing the electron temperature anisotropy and analyze the electron pitch angle distributions and electron distribution functions in our simulations and compare it with MMS observations.

Observation of preformed electron-hole Cooper pairs in highly excited ZnO

NARCIS (Netherlands)

Versteegh, M.A.M.; van Lange, A.J.; Stoof, H.T.C.; Dijkhuis, J.I.

2012-01-01

Electrons and holes in a semiconductor form hydrogen-atom-like bound states, called excitons. At high electron-hole densities the attractive Coulomb force becomes screened and excitons can no longer exist. Bardeen-Cooper-Schrieffer theory predicts that at such high densities co-operative many-body

Electron-hole pair effects in methane dissociative chemisorption on Ni(111)

Energy Technology Data Exchange (ETDEWEB)

Luo, Xuan; Jiang, Bin, E-mail: bjiangch@ustc.edu.cn [Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Juaristi, J. Iñaki [Centro de Física de Materiales CFM/MPC(CSIC-UPV/EHU), P. Manuel de Lardizabal 5, 20018 San Sebastián (Spain); Donostia International Physics Center DIPC, P. Manuel de Lardizabal 4, 20018 San Sebastián (Spain); Departamento de Física de Materiales, Facultad de Químicas, Universidad del País Vasco (UPV/EHU), Apartado 1072, 20080 San Sebastián (Spain); Alducin, Maite [Centro de Física de Materiales CFM/MPC(CSIC-UPV/EHU), P. Manuel de Lardizabal 5, 20018 San Sebastián (Spain); Donostia International Physics Center DIPC, P. Manuel de Lardizabal 4, 20018 San Sebastián (Spain); Guo, Hua [Department of Chemistry and Chemical Biology, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2016-07-28

The dissociative chemisorption of methane on metal surfaces has attracted much attention in recent years as a prototype of gas-surface reactions in understanding the mode specific and bond selective chemistry. In this work, we systematically investigate the influence of electron-hole pair excitations on the dissociative chemisorption of CH{sub 4}/CH{sub 3}D/CHD{sub 3} on Ni(111). The energy dissipation induced by surface electron-hole pair excitations is modeled as a friction force introduced in the generalized Langevin equation, in which the independent atomic friction coefficients are determined within the local-density friction approximation. Quasi-classical trajectory calculations for CH{sub 4}/CH{sub 3}D/CHD{sub 3} have been carried out on a recently developed twelve-dimensional potential energy surface. Comparing the dissociation probabilities obtained with and without friction, our results clearly indicate that the electron-hole pair effects are generally small, both on absolute reactivity of each vibrational state and on the mode specificity and bond selectivity. Given similar observations in both water and methane dissociation processes, we conclude that electron-hole pair excitations would not play an important role as long as the reaction is direct and the interaction time between the molecule and metal electrons is relatively short.

Electron-hole liquid in semiconductors and low-dimensional structures

Science.gov (United States)

Sibeldin, N. N.

2017-11-01

The condensation of excitons into an electron-hole liquid (EHL) and the main EHL properties in bulk semiconductors and low-dimensional structures are considered. The EHL properties in bulk materials are discussed primarily in qualitative terms based on the experimental results obtained for germanium and silicon. Some of the experiments in which the main EHL thermodynamic parameters (density and binding energy) have been obtained are described and the basic factors that determine these parameters are considered. Topics covered include the effect of external perturbations (uniaxial strain and magnetic field) on EHL stability; phase diagrams for a nonequilibrium exciton-gas-EHL system; information on the size and concentration of electron-hole drops (EHDs) under various experimental conditions; the kinetics of exciton condensation and of recombination in the exciton-gas-EHD system; dynamic EHD properties and the motion of EHDs under the action of external forces; the properties of giant EHDs that form in potential wells produced by applying an inhomogeneous strain to the crystal; and effects associated with the drag of EHDs by nonequilibrium phonons (phonon wind), including the dynamics and formation of an anisotropic spatial structure of the EHD cloud. In discussing EHLs in low-dimensional structures, a number of studies are reviewed on the observation and experimental investigation of phenomena such as spatially indirect (dipolar) electron-hole and exciton (dielectric) liquids in GaAs/AlGaAs structures with double quantum wells (QWs), EHDs containing only a few electron-hole pairs (dropletons), EHLs in type-I silicon QWs, and spatially direct and dipolar EHLs in type-II silicon-germanium heterostructures.

Observations of electron phase-space holes driven during magnetic reconnection in a laboratory plasma

Science.gov (United States)

Fox, W.; Porkolab, M.; Egedal, J.; Katz, N.; Le, A.

2012-03-01

This work presents detailed experimental observations of electron phase-space holes driven during magnetic reconnection events on the Versatile Toroidal Facility. The holes are observed to travel on the order of or faster than the electron thermal speed, and are of large size scale, with diameter of order 60 Debye lengths. In addition, they have 3D spheroidal structure with approximately unity aspect ratio. We estimate the direct anomalous resistivity due to ion interaction with the holes and find it to be too small to affect the reconnection rate; however, the holes may play a role in reining in a tail of accelerated electrons and they indicate the presence of other processes in the reconnection layer, such as electron energization and electron beam formation.

Electron-hole collision limited transport in charge-neutral bilayer graphene

Science.gov (United States)

Nam, Youngwoo; Ki, Dong-Keun; Soler-Delgado, David; Morpurgo, Alberto F.

2017-12-01

Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impurities, but by electron-hole collisions. The phenomenon manifests itself in a negative four-terminal resistance that becomes visible when the density of holes (electrons) is suppressed by gate-shifting the Fermi level in the conduction (valence) band, above the thermal energy. For smaller densities, transport is diffusive, and the measured conductivity is reproduced quantitatively, with no fitting parameters, by including electron-hole scattering as the only process causing velocity relaxation. Experiments on a trilayer device show that the phenomenon is robust and that transport at charge neutrality is governed by the same physics. Our results provide a textbook illustration of a transport regime that had not been observed previously and clarify the nature of conduction through charge-neutral graphene under conditions in which carrier density inhomogeneity is immaterial. They also demonstrate that transport can be limited by a fully electronic mechanism, originating from the same microscopic processes that govern the physics of Dirac-like plasmas.

Photoinduced electron transfer and persistent spectral hole-burning in natural emerald.

Science.gov (United States)

Riesen, Hans

2011-06-02

Wavelength-selective excited-state lifetime measurements and absorption, luminescence, and hole-burning spectra of a natural African emerald crystal are reported. The (2)E excited-state lifetime displays an extreme wavelength dependence, varying from 190 to 37 μs within 1.8 nm of the R(1)-line. Overall, the excited state is strongly quenched, in comparison to laboratory-created emerald (τ=1.3 ms), with an average quenching rate of ∼6 × 10(3) s(-1) at 2.5 K. This quenching is attributed to photoinduced electron transfer caused by a relatively high concentration of Fe(2+) ions. The forward electron-transfer rate, k(f), from the nearest possible Fe(2+) sites at around 5 Å is estimated to be ∼20 × 10(3) s(-1) at 2.5 K. The photoreductive quenching of the excited Cr(3+) ions by Fe(2+) is followed by rapid electron back-transfer in the ground state upon deactivation. The exchange interaction based quenching can be modeled by assuming a random quencher distribution within the possible Fe(2+) sites with the forward electron-transfer rate, k(f), given as a function of acceptor-donor separation R by exp[(R(f)-R)/a(f)]; R(f) and a(f) values of 13.5 and 2.7 Å are obtained at 2.5 K. The electron transfer/back-transfer reorganizes the local crystal lattice, occasionally leading to a minor variation of the short-range structure around the Cr(3+) ions. This provides a mechanism for spectral hole-burning for which a moderately high quantum efficiency of about ∼0.005% is observed. Spectral holes are subject to spontaneous hole-filling and spectral diffusion, and both effects can be quantified within the standard two-level systems for non-photochemical hole-burning. Importantly, the absorbance increases on both sides of broad spectral holes, and isosbestic points are observed, in accord with the expected distribution of the "photoproduct" in a non-photochemical hole-burning process. © 2011 American Chemical Society

Deriving the coronal hole electron temperature: electron density dependent ionization / recombination considerations

International Nuclear Information System (INIS)

Doyle, John Gerard; Perez-Suarez, David; Singh, Avninda; Chapman, Steven; Bryans, Paul; Summers, Hugh; Savin, Daniel Wolf

2010-01-01

Comparison of appropriate theoretically derived line ratios with observational data can yield estimates of a plasma's physical parameters, such as electron density or temperature. The usual practice in the calculation of the line ratio is the assumption of excitation by electrons/protons followed by radiative decay. Furthermore, it is normal to use the so-called coronal approximation, i.e. one only considers ionization and recombination to and from the ground-state. A more accurate treatment is to include ionization/recombination to and from metastable levels. Here, we apply this to two lines from adjacent ionization stages, Mg IX 368 A and Mg X 625 A, which has been shown to be a very useful temperature diagnostic. At densities typical of coronal hole conditions, the difference between the electron temperature derived assuming the zero density limit compared with the electron density dependent ionization/recombination is small. This, however, is not the case for flares where the electron density is orders of magnitude larger. The derived temperature for the coronal hole at solar maximum is around 1.04 MK compared to just below 0.82 MK at solar minimum.

Giant electron-hole transport asymmetry in ultra-short quantum transistors

Science.gov (United States)

McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

2017-01-01

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. PMID:28561024

Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

Science.gov (United States)

Rahul, K. Suseel; Souparnika, C.; Salini, K.; Mathew, Vincent

2016-05-01

In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

Energy Technology Data Exchange (ETDEWEB)

Rahul, K. Suseel [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India); Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Souparnika, C. [Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India)

2016-05-06

In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

Electron-phonon contribution to the phonon and excited electron (hole) linewidths in bulk Pd

International Nuclear Information System (INIS)

Sklyadneva, I Yu; Leonardo, A; Echenique, P M; Eremeev, S V; Chulkov, E V

2006-01-01

We present an ab initio study of the electron-phonon (e-ph) coupling and its contribution to the phonon linewidths and to the lifetime broadening of excited electron and hole states in bulk Pd. The calculations, based on density-functional theory, were carried out using a linear-response approach in the plane-wave pseudopotential representation. The obtained results for the Eliashberg spectral function α 2 F(ω), e-ph coupling constant λ, and the contribution to the lifetime broadening, Γ e-ph , show strong dependence on both the energy and momentum of an electron (hole) state. The calculation of phonon linewidths gives, in agreement with experimental observations, an anomalously large broadening for the transverse phonon mode T 1 in the Σ direction. In addition, this mode is found to contribute most strongly to the electron-phonon scattering processes on the Fermi surface

Direct Observation of Electron-to-Hole Energy Transfer in CdSe Quantum Dots

NARCIS (Netherlands)

Hendry, E.; Koeberg, M.; Wang, F.; Zhang, H.; de Mello Donega, C.; Vanmaekelbergh, D.; Bonn, M.

2006-01-01

We independently determine the subpicosecond cooling rates for holes and electrons in CdSe quantum dots. Time-resolved luminescence and terahertz spectroscopy reveal that the rate of hole cooling, following photoexcitation of the quantum dots, depends critically on the electron excess energy. This

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

Science.gov (United States)

Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2017-07-10

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Plasma phase transition in dense hydrogen and electron-hole plasmas

CERN Document Server

Filinov, V S; Levashov, P R; Fortov, V E; Ebeling, W; Schlanges, M; Koch, S W

2003-01-01

Plasma phase transitions in dense hydrogen and electron-hole plasmas are investigated by direct path integral Monte Carlo methods. The phase boundary of the electron-hole liquid in germanium is calculated and is found to agree reasonably well with the known experimental results. Analogous behaviour is found for high-density hydrogen. For a temperature of T = 10 000 K it is shown that the internal energy is lowered due to droplet formation for densities between 10 sup 2 sup 3 cm sup - sup 3 and 10 sup 2 sup 4 cm sup - sup 3.

Quantum simulations of small electron-hole complexes

International Nuclear Information System (INIS)

Lee, M.A.; Kalia, R.K.; Vashishta, P.D.

1984-09-01

The Green's Function Monte Carlo method is applied to the calculation of the binding energies of electron-hole complexes in semiconductors. The quantum simulation method allows the unambiguous determination of the ground state energy and the effects of band anisotropy on the binding energy. 22 refs., 1 fig

Fermi-edge superfluorescence from a quantum-degenerate electron-hole gas

Science.gov (United States)

Kim, Ji-Hee; , G. Timothy Noe, II; McGill, Stephen A.; Wang, Yongrui; Wójcik, Aleksander K.; Belyanin, Alexey A.; Kono, Junichiro

2013-11-01

Nonequilibrium can be a source of order. This rather counterintuitive statement has been proven to be true through a variety of fluctuation-driven, self-organization behaviors exhibited by out-of-equilibrium, many-body systems in nature (physical, chemical, and biological), resulting in the spontaneous appearance of macroscopic coherence. Here, we report on the observation of spontaneous bursts of coherent radiation from a quantum-degenerate gas of nonequilibrium electron-hole pairs in semiconductor quantum wells. Unlike typical spontaneous emission from semiconductors, which occurs at the band edge, the observed emission occurs at the quasi-Fermi edge of the carrier distribution. As the carriers are consumed by recombination, the quasi-Fermi energy goes down toward the band edge, and we observe a continuously red-shifting streak. We interpret this emission as cooperative spontaneous recombination of electron-hole pairs, or superfluorescence (SF), which is enhanced by Coulomb interactions near the Fermi edge. This novel many-body enhancement allows the magnitude of the spontaneously developed macroscopic polarization to exceed the maximum value for ordinary SF, making electron-hole SF even more ``super'' than atomic SF.

Interacting Electrons and Holes in Quasi-2D Quantum Dots in Strong Magnetic Fields

Science.gov (United States)

Hawrylak, P.; Sheng, W.; Cheng, S.-J.

2004-09-01

Theory of optical properties of interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields is discussed. In two dimensions and the lowest Landau level, hidden symmetries control the interaction of the interacting system with light. By confining electrons and holes into quantum dots hidden symmetries can be removed and the excitation spectrum of electrons and excitons can be observed. We discuss a theory electronic and of excitonic quantum Hall droplets at a filling factorν=2. For an excitonic quantum Hall droplet the characteristic emission spectra are predicted to be related to the total spin of electron and hole configurations. For the electronic droplet the excitation spectrum of the droplet can be mapped out by measuring the emission for increasing number of electrons.

Interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields

International Nuclear Information System (INIS)

Hawrylak, P.; Sheng, W.; Cheng, S.-J.

2004-01-01

Theory of optical properties of interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields is discussed. In two dimensions and the lowest Landau level, hidden symmetries control the interaction of the interacting system with light. By confining electrons and holes into quantum dots hidden symmetries can be removed and the excitation spectrum of electrons and excitons can be observed. We discuss a theory electronic and excitonic quantum Hall droplets at a filling factor υ = 2. For an excitonic quantum Hall droplet the characteristic emission spectra are predicted to be related to the total spin of electron and hole configurations. For the electronic droplet the excitation spectrum of the droplet can be mapped out by measuring the emission for increasing number of electrons. (author)

Doping Phosphorene with Holes and Electrons through Molecular Charge Transfer.

Science.gov (United States)

Vishnoi, Pratap; Rajesh, S; Manjunatha, S; Bandyopadhyay, Arkamita; Barua, Manaswee; Pati, Swapan K; Rao, C N R

2017-11-03

An important aspect of phosphorene, the novel two-dimensional semiconductor, is whether holes and electrons can both be doped in this material. Some reports found that only electrons can be preferentially doped into phosphorene. There are some theoretical calculations showing charge-transfer interaction with both tetrathiafulvalene (TTF) and tetracyanoethylene (TCNE). We have carried out an investigation of chemical doping of phosphorene by a variety of electron donor and acceptor molecules, employing both experiment and theory, Raman scattering being a crucial aspect of the study. We find that both electron acceptors and donors interact with phosphorene by charge-transfer, with the acceptors having more marked effects. All the three Raman bands of phosphorene soften and exhibit band broadening on interaction with both donor and acceptor molecules. First-principles calculations establish the occurrence of charge-transfer between phosphorene with donors as well as acceptors. The absence of electron-hole asymmetry is noteworthy. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Correlation effects on spin-polarized electron-hole quantum bilayer

Energy Technology Data Exchange (ETDEWEB)

Saini, L. K., E-mail: drlalitsaini75@gmail.com; Sharma, R. O., E-mail: sharmarajesh0387@gmail.com [Department of Applied Physics, S. V. National Institute of Technology, Surat – 395 007 (India); Nayak, Mukesh G. [Department of Physics, Silvassa College (Silvassa Institute of Higher Learning), Silvassa 396 230 (India)

2016-05-06

We present a numerical calculation for the intra- and interlayer pair-correlation functions, g{sub ll’}(r), of spin-polarized electron-hole quantum bilayers at zero temperature. The calculations of g{sub ll’}(r) are performed by including electron correlations within the dynamical version of the self-consistent mean-field approximation of Singwi, Tosi, Land and Sjölander (qSTLS). Our study reveals that the critical layer density decreases (increases) due to the inclusion of finite width (mass-asymmetry) effect during the phase-transition from charge-density wave to Wigner crystal ground-state by yielding the pronounced oscillatory behavior ing{sub ll}(r). The results are compared with recent findings of spin-polarized electron-hole quantum bilayers with mass-symmetry and zero width effects. To highlight the importance of dynamical character of correlations, we have also compared our results with the STLS results.

Dynamics of electrons and holes at surfaces

International Nuclear Information System (INIS)

Chulkov, E.V.; Leonardo, A.; Sklyadneva, I.Yu.; Silkin, V.M.

2007-01-01

We present ab initio calculation results for electron-phonon (e-ph) contribution to hole lifetime broadening of the X-bar surface state on Al(0 0 1). We show that e-ph coupling in this state is significantly stronger than in bulk Al at the Fermi level. It makes the e-ph decay channel very important in the formation of the hole decay in the surface state at X-bar. We also present the results for e-e lifetime broadening in a quantum-well state in 1 ML K/Cu(1 1 1). We show that this contribution is not negligible and is much larger than that in a surface state on Ag(1 1 1)

Exchange electron-hole interaction of two-dimensional magnetoexcitons under the influence of the Rashba spin-orbit coupling

International Nuclear Information System (INIS)

Moskalenko, S.A.; Podlesny, I.V.; Lelyakov, I.A.; Novikov, B.V.; Kiselyova, E.S.; Gherciu, L.

2011-01-01

The Rashba spin-orbit coupling (RSOC) in the case of two-dimensional (2D) electrons and holes in a strong perpendicular magnetic field was studied. The spinor-type wave functions are characterized by different numbers of Landau levels in different spin projections. For electrons they differ by 1 as was established earlier by Rashba, whereas for holes they differ by 3. Two lowest electron states and four lowest hole states of Landau quantization give rise to eight 2D magnetoexciton states. The exchange electron-hole interaction in the frame of these states is investigated.

Coulomb drag in electron-hole bilayer: Mass-asymmetry and exchange correlation effects

Science.gov (United States)

Arora, Priya; Singh, Gurvinder; Moudgil, R. K.

2018-04-01

Motivated by a recent experiment by Zheng et al. [App. Phys. Lett. 108, 062102 (2016)] on coulomb drag in electron-hole and hole-hole bilayers based on GaAs/AlGaAs semiconductor heterostructure, we investigate theoretically the influence of mass-asymmetry and temperature-dependence of correlations on the drag rate. The correlation effects are dealt with using the Vignale-Singwi effective inter-layer interaction model which includes correlations through local-field corrections to the bare coulomb interactions. However, in this work, we have incorporated only the intra-layer correlations using the temperature-dependent Hubbard approximation. Our results display a reasonably good agreement with the experimental data. However, it is crucial to include both the electron-hole mass-asymmetry and temperature-dependence of correlations. Mass-asymmetry and correlations are found to result in a substantial enhancement of drag resistivity.

Excitons formed from spatially separated electrons and holes in Ge/Si geterostructures with Ge quantum dots

International Nuclear Information System (INIS)

Pokutnyj, S.I.

2016-01-01

The effect of a significant increase in the exciton binding energy of space-separated electrons and holes (hole moves in the volume of the quantum dot, and the electron is localized on a spherical surface section quantum dot-matrix) in nanosystems containing germanium quantum dots grown in a matrix of silicon by compared with the binding energy of an exciton in a silicon single crystal. It was found that in such nanosystems in the conduction band silicon matrix is first a zone of states of electron-hole pairs, which with increasing radius of the quantum dot becomes a zone of exciton states, located in the band gap of silicon matrix. It is shown that the mechanism of light absorption in nanosystems due to transitions between quantum-electron levels of the electron-hole pairs, as well as the electron transitions between quantum-exciton levels.

Observation of hole accumulation in Ge/Si core/shell nanowires using off-axis electron holography.

Science.gov (United States)

Li, Luying; Smith, David J; Dailey, Eric; Madras, Prashanth; Drucker, Jeff; McCartney, Martha R

2011-02-09

Hole accumulation in Ge/Si core/shell nanowires (NWs) has been observed and quantified using off-axis electron holography and other electron microscopy techniques. The epitaxial [110]-oriented Ge/Si core/shell NWs were grown on Si (111) substrates by chemical vapor deposition through the vapor-liquid-solid growth mechanism. High-angle annular-dark-field scanning transmission electron microscopy images and off-axis electron holograms were obtained from specific NWs. The excess phase shifts measured by electron holography across the NWs indicated the presence of holes inside the Ge cores. Calculations based on a simplified coaxial cylindrical model gave hole densities of (0.4 ± 0.2) /nm(3) in the core regions.

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

OpenAIRE

Han, Wei; Wang, W. H.; Pi, K.; McCreary, K. M.; Bao, W.; Li, Yan; Miao, F.; Lau, C. N.; Kawakami, R. K.

2009-01-01

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-...

Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Marchand, A.; El Hdiy, A.; Troyon, M. [Laboratoire de Recherche en Nanosciences, Bat. 6, case no 15, UFR Sciences, Universite de Reims Champagne Ardenne, 51687 Reims Cedex 2 (France); Amiard, G.; Ronda, A.; Berbezier, I. [IM2NP, Faculte des Sciences et Techniques, Campus de Saint Jerome - Case 142, Avenue Escadrille Normandie Niemen, 13397 Marseille Cedex 20 (France)

2012-04-16

Dynamics of hole storage in spherical Ge nanocrystals (NCs) formed by a two step dewetting/nucleation process on an oxide layer grown on an n-doped <001> silicon substrate is studied using a nano-electron beam induced current technique. Carrier generation is produced by an electron beam irradiation. The generated current is collected by an atomic force microscope--tip in contact mode at a fixed position away from the beam spot of about 0.5 {mu}m. This distance represents the effective diffusion length of holes. The time constants of holes charging are determined and the effect of the NC size is underlined.

On Electron Hole Evolution in Inhomogeneous Plasmas

Science.gov (United States)

Kuzichev, I.; Vasko, I.; Agapitov, O. V.; Mozer, F.; Artemyev, A.

2017-12-01

Electron holes (EHs) are the stationary localized non-linear structures in phase space existing due to an electron population trapped within EH electrostatic potential. EHs were found to be a common phenomenon in the Earth's magnetosphere. Such structures were observed in reconnecting current sheets, injection fronts in the outer radiation belt, and in many other situations. EHs usually propagate along magnetic field lines with velocities about electron thermal velocity, are localized on the scale of about 4-10 Debye lengths, and have the field amplitude up to hundreds of mV/m. Generation of these structures, evolution, and their role in relaxation of instabilities and energy dissipation, particle energization, supporting large-scale potential drops is under active investigation. In this report, we present the results of 1.5D gyrokinetic Vlasov-Maxwell simulations of the EH evolution in plasmas with inhomogeneous magnetic field and inhomogeneous density. Our calculations show that the inhomogeneity has a critical effect on the EH dynamics. EHs propagating into stronger (weaker) magnetic field are decelerated (accelerated) with deceleration (acceleration) rate dependent on the magnetic field gradient. During the deceleration of EH, the potential drop (weak double layer) along EH is generated. Such a potential drop might be experimentally observable even for single EH in the reconnecting current sheets. The same holds for the propagation in the plasma with inhomogeneous density. For some parameters of the system, the deceleration results in the turning of the hole. The interesting feature of this process is that the turning point depends only on the EH parameters, being independent of the average inhomogeneity scale. Our calculations also demonstrate the significant difference between "quasi-particle" concept and real evolution of the hole. Indeed, the EH is accelerated (decelerated) faster than it follows from a quasi-particle energy conservation law. It indicates

Electrostatics of electron-hole interactions in van der Waals heterostructures

Science.gov (United States)

Cavalcante, L. S. R.; Chaves, A.; Van Duppen, B.; Peeters, F. M.; Reichman, D. R.

2018-03-01

The role of dielectric screening of electron-hole interaction in van der Waals heterostructures is theoretically investigated. A comparison between models available in the literature for describing these interactions is made and the limitations of these approaches are discussed. A simple numerical solution of Poisson's equation for a stack of dielectric slabs based on a transfer matrix method is developed, enabling the calculation of the electron-hole interaction potential at very low computational cost and with reasonable accuracy. Using different potential models, direct and indirect exciton binding energies in these systems are calculated within Wannier-Mott theory, and a comparison of theoretical results with recent experiments on excitons in two-dimensional materials is discussed.

Harvesting multiple electron-hole pairs generated through plasmonic excitation of Au nanoparticles.

Science.gov (United States)

Kim, Youngsoo; Smith, Jeremy G; Jain, Prashant K

2018-05-07

Multi-electron redox reactions, although central to artificial photosynthesis, are kinetically sluggish. Amidst the search for synthetic catalysts for such processes, plasmonic nanoparticles have been found to catalyse multi-electron reduction of CO 2 under visible light. This example motivates the need for a general, insight-driven framework for plasmonic catalysis of such multi-electron chemistry. Here, we elucidate the principles underlying the extraction of multiple redox equivalents from a plasmonic photocatalyst. We measure the kinetics of electron harvesting from a gold nanoparticle photocatalyst as a function of photon flux. Our measurements, supported by theoretical modelling, reveal a regime where two-electron transfer from the excited gold nanoparticle becomes prevalent. Multiple electron harvesting becomes possible under continuous-wave, visible-light excitation of moderate intensity due to strong interband transitions in gold and electron-hole separation accomplished using a hole scavenger. These insights will help expand the utility of plasmonic photocatalysis beyond CO 2 reduction to other challenging multi-electron, multi-proton transformations such as N 2 fixation.

Electrogenerated chemiluminescence induced by sequential hot electron and hole injection into aqueous electrolyte solution

Energy Technology Data Exchange (ETDEWEB)

Salminen, Kalle; Kuosmanen, Päivi; Pusa, Matti [Aalto University, Department of Chemistry, Laboratory of Analytical Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Kulmala, Oskari [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 (Finland); Håkansson, Markus [Aalto University, Department of Chemistry, Laboratory of Analytical Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Kulmala, Sakari, E-mail: sakari.kulmala@aalto.fi [Aalto University, Department of Chemistry, Laboratory of Analytical Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland)

2016-03-17

Hole injection into aqueous electrolyte solution is proposed to occur when oxide-coated aluminum electrode is anodically pulse-polarized by a voltage pulse train containing sufficiently high-voltage anodic pulses. The effects of anodic pulses are studied by using an aromatic Tb(III) chelate as a probe known to produce intensive hot electron-induced electrochemiluminescence (HECL) with plain cathodic pulses and preoxidized electrodes. The presently studied system allows injection of hot electrons and holes successively into aqueous electrolyte solutions and can be utilized in detecting electrochemiluminescent labels in fully aqueous solutions, and actually, the system is suggested to be quite close to a pulse radiolysis system providing hydrated electrons and hydroxyl radicals as the primary radicals in aqueous solution without the problems and hazards of ionizing radiation. The analytical power of the present excitation waveforms are that they allow detection of electrochemiluminescent labels at very low detection limits in bioaffinity assays such as in immunoassays or DNA probe assays. The two important properties of the present waveforms are: (i) they provide in situ oxidation of the electrode surface resulting in the desired oxide film thickness and (ii) they can provide one-electron oxidants for the system by hole injection either via F- and F{sup +}-center band of the oxide or by direct hole injection to valence band of water at highly anodic pulse amplitudes. - Highlights: • Hot electrons injected into aqueous electrolyte solution. • Generation of hydrated electrons. • Hole injection into aqueous electrolyte solution. • Generation of hydroxyl radicals.

Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation.

Science.gov (United States)

Chirayath, V A; Callewaert, V; Fairchild, A J; Chrysler, M D; Gladen, R W; Mcdonald, A D; Imam, S K; Shastry, K; Koymen, A R; Saniz, R; Barbiellini, B; Rajeshwar, K; Partoens, B; Weiss, A H

2017-07-13

Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition.

Desorption by Femtosecond Laser Pulses : An Electron-Hole Effect?

OpenAIRE

D. M., NEWNS; T. F., HEINZ; J. A., MISEWICH; IBM Research Division, T. J. Watson Research Center; IBM Research Division, T. J. Watson Research Center; IBM Research Division, T. J. Watson Research Center

1992-01-01

Desorption of molecules from metal surfaces induced by femtosecond visible laser pulses has been reported. Since the lattice temperature rise is insufficient to explain desorption, an electronic mechanism is clearly responsible. It is shown that a theory based on direct coupling between the center-of-mass degree of freedom of the adsorbate and the electron-hole excitations of the substrate provides a satisfactory explanation of the various experimental findings.

Diffusive scattering of electrons by electron holes around injection fronts

Science.gov (United States)

Vasko, I. Y.; Agapitov, O. V.; Mozer, F. S.; Artemyev, A. V.; Krasnoselskikh, V. V.; Bonnell, J. W.

2017-03-01

Van Allen Probes have detected nonlinear electrostatic spikes around injection fronts in the outer radiation belt. These spikes include electron holes (EH), double layers, and more complicated solitary waves. We show that EHs can efficiently scatter electrons due to their substantial transverse electric fields. Although the electron scattering driven by EHs is diffusive, it cannot be evaluated via the standard quasi-linear theory. We derive analytical formulas describing local electron scattering by a single EH and verify them via test particle simulations. We show that the most efficiently scattered are gyroresonant electrons (crossing EH on a time scale comparable to the local electron gyroperiod). We compute bounce-averaged diffusion coefficients and demonstrate their dependence on the EH spatial distribution (latitudinal extent and spatial filling factor) and individual EH parameters (amplitude of electrostatic potential, velocity, and spatial scales). We show that EHs can drive pitch angle scattering of ≲5 keV electrons at rates 10-2-10-4 s-1 and, hence, can contribute to electron losses and conjugated diffuse aurora brightenings. The momentum and pitch angle scattering rates can be comparable, so that EHs can also provide efficient electron heating. The scattering rates driven by EHs at L shells L ˜ 5-8 are comparable to those due to chorus waves and may exceed those due to electron cyclotron harmonics.

Stability of Sarma phases in density imbalanced electron-hole bilayer systems

International Nuclear Information System (INIS)

Subasi, A. L.; Tanatar, B.; Pieri, P.; Senatore, G.

2010-01-01

We study excitonic condensation in an electron-hole bilayer system with unequal layer densities at zero temperature. Using mean-field theory we solve the Bardeen-Cooper-Schrieffer (BCS) gap equations numerically and investigate the effects of intralayer interactions. The electron-hole system evolves from BCS in the weak coupling limit to Bose-Einstein condensation (BEC) in the strong coupling limit. We analyze the stability of the Sarma phase with k,-k pairing by calculating the superfluid mass density and also by checking the compressibility matrix. We find that with bare Coulomb interactions the superfluid density is always positive in the Sarma phase, due to a peculiar momentum structure of the gap function originating from the singular behavior of the Coulomb potential at zero momentum and the presence of a sharp Fermi surface. Introducing a simple model for screening, we find that the superfluid density becomes negative in some regions of the phase diagram, corresponding to an instability toward a Fulde-Ferrel-Larkin-Ovchinnikov-type superfluid phase. Thus, intralayer interaction and screening together can lead to a rich phase diagram in the BCS-BEC crossover regime in electron-hole bilayer systems.

Electron Hole Plasma in Solids Induced by Ultrashort XUV Laser Pulses

International Nuclear Information System (INIS)

Rethfeld, B.; Medvedev, N.

2013-01-01

Irradiation of solids with ultrashort XUV laser pulses leads to an excitation of electrons from the valence band and deeper shells to the conduction band leading to a nonequilibrium highly energetic electron hole plasma. We investigate the transient electron dynamics in a solid semiconductor and metal (silicon and aluminum, respectively) under irradiation with a femtosecond VUV to XUV laser pulse as used in experiments with the Free Electron Laser FLASH at DESY in Hamburg, Germany. Applying the Asymptotical Trajectory Monte-Carlo technique, we obtain the transient energy distribution of the excited and ionized electrons within the solid. Photon absorption by electrons in different bands and secondary excitation and ionization processes are simulated event by event. The method was extended in order to take into account the electronic band structure and Pauli's principle for electrons in the conduction band. In this talk we review our results on the dynamics of the transient electron-hole plasma, in particular its transient density and energy distribution in dependence on laser and material parameters. For semiconductors we introduce the concept of an ''effective energy gap'' for collective electronic excitation, which can be applied to estimate the free electron density after high-intensity ultrashort XUV laser pulse irradiation. For aluminum we demonstrate that the electronic spectra depend on the relaxation kinetics of the excited electronic subsystem. Experimentally observed spectra of emitted photons from irradiated aluminum can be explained well with our results. (author)

Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer.

Science.gov (United States)

Sanchez-Yamagishi, Javier D; Luo, Jason Y; Young, Andrea F; Hunt, Benjamin M; Watanabe, Kenji; Taniguchi, Takashi; Ashoori, Raymond C; Jarillo-Herrero, Pablo

2017-02-01

Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics. Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron-hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong non-local transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Unlike other approaches used for realizing helical states, the graphene electron-hole bilayer can be used to build new 1D systems incorporating fractional edge states. Indeed, we are able to tune the bilayer devices into a regime hosting fractional and integer edge states of opposite chiralities, paving the way towards 1D helical conductors with fractional quantum statistics.

Identification of electron and hole traps in KH2PO4 crystals

International Nuclear Information System (INIS)

Garces, N. Y.; Stevens, K. T.; Halliburton, L. E.; Demos, S. G.; Radousky, H. B.; Zaitseva, N. P.

2001-01-01

Electron paramagnetic resonance (EPR) has been used to characterize a hole trap and several electron traps in single crystals of potassium dihydrogen phosphate (KH 2 PO 4 or KDP). The paramagnetic charge states of these centers are produced by ionizing radiation (e.g., x rays or a 266 nm beam from a pulsed Nd:YAG laser) and are stable for days and even weeks at room temperature. One center consists of a hole trapped on an oxygen ion adjacent to a silicon impurity located on a phosphorus site. This defect has a small, but easily observed, hyperfine interaction with the adjacent substitutional proton. The other centers are formed when an electron is trapped at an oxygen vacancy. These latter defects are best described as (PO 3 ) 2- molecular ions, where the primary phosphorus nucleus is responsible for a large hyperfine splitting (500--800 G in magnitude). Five EPR spectra representing variations of these oxygen vacancy centers are observed, with the differences being attributed to the relative position of a nearby cation vacancy, either a missing proton or potassium. An angular study of the EPR spectra, conducted at room temperature, provided principal values and principal directions for the g matrices and hyperfine matrices for the hole center and two of the electron centers

Many-body correlation effects in the spatially separated electron and hole layers in the coupled quantum wells

Energy Technology Data Exchange (ETDEWEB)

Babichenko, V.S. [RRC Kurchatov Institute, Kurchatov Sq., 1, 123182 Moscow (Russian Federation); Polishchuk, I.Ya., E-mail: iyppolishchuk@gmail.com [RRC Kurchatov Institute, Kurchatov Sq., 1, 123182 Moscow (Russian Federation); Moscow Institute of Physics and Technology, 141700, 9, Institutskii per., Dolgoprudny, Moscow Region (Russian Federation)

2014-11-15

The many-body correlation effects in the spatially separated electron and hole layers in the coupled quantum wells are investigated. A special case of the many-component electron–hole system is considered. It is shown that if the hole mass is much greater than the electron mass, the negative correlation energy is mainly determined by the holes. The ground state of the system is found to be the 2D electron–hole liquid with the energy smaller than the exciton phase. It is shown that the system decays into the spatially separated neutral electron–hole drops if the initially created charge density in the layers is smaller than the certain critical value n{sub eq}.

The effects of electron-hole separation on the photoconductivity of individual metal oxide nanowires

International Nuclear Information System (INIS)

Prades, J D; Hernandez-Ramirez, F; Jimenez-Diaz, R; Manzanares, M; Andreu, T; Cirera, A; Romano-Rodriguez, A; Morante, J R

2008-01-01

The responses of individual ZnO nanowires to UV light demonstrate that the persistent photoconductivity (PPC) state is directly related to the electron-hole separation near the surface. Our results demonstrate that the electrical transport in these nanomaterials is influenced by the surface in two different ways. On the one hand, the effective mobility and the density of free carriers are determined by recombination mechanisms assisted by the oxidizing molecules in air. This phenomenon can also be blocked by surface passivation. On the other hand, the surface built-in potential separates the photogenerated electron-hole pairs and accumulates holes at the surface. After illumination, the charge separation makes the electron-hole recombination difficult and originates PPC. This effect is quickly reverted after increasing either the probing current (self-heating by Joule dissipation) or the oxygen content in air (favouring the surface recombination mechanisms). The model for PPC in individual nanowires presented here illustrates the intrinsic potential of metal oxide nanowires to develop optoelectronic devices or optochemical sensors with better and new performances.

Interaction of non-equilibrium phonons with electron-hole plasmas in germanium

International Nuclear Information System (INIS)

Kirch, S.J.

1985-01-01

This thesis presents results of experiments on the interaction of phonons and photo-excited electron-hole plasmas in Ge at low temperature. The first two studies involved the low-temperature fluid phase known as the electron-hole liquid (EHL). The third study involved a wider range of temperatures and includes the higher temperature electron-hole plasma (EHP). In the first experiment, superconducting tunnel junctions are used to produce quasi-monochromatic phonons, which propagate through the EHL. The magnitude of the absorption of these non-equilibrium phonons gives a direct measure of the coupling constant, the deformation potential. In the second experiment, the nonequilibrium phonons are generated by laser excitation of a metal film. An unusual sample geometry allows examination of the EHL-phonon interaction near the EHL excitation surface. This coupling is examined for both cw and pulsed EHL excitation. In the third experiment, the phonons are byproducts of the photo-excited carrier thermalization. The spatial, spectral and temporal dependence of the recombination luminescence is examined. A phonon wind force is observed to dominate the transport properties of the EHL and the EHP. These carriers are never observed to move faster than the phonon velocity even during the laser pulse

Ultrafast carrier dynamics in tetrahedral amorphous carbon: carrier trapping versus electron-hole recombination

International Nuclear Information System (INIS)

Carpene, E; Mancini, E; Dallera, C; Schwen, D; Ronning, C; Silvestri, S De

2007-01-01

We report the investigation of the ultrafast carrier dynamics in thin tetrahedral amorphous carbon films by means of femtosecond time-resolved reflectivity. We estimated the electron-phonon relaxation time of a few hundred femtoseconds and we observed that under low optical excitation photo-generated carriers decay according to two distinct mechanisms attributed to trapping by defect states and direct electron-hole recombination. With high excitation, when photo-carrier and trap densities are comparable, a unique temporal evolution develops, as the time dependence of the trapping process becomes degenerate with the electron-hole recombination. This experimental evidence highlights the role of defects in the ultrafast electronic dynamics and is not specific to this particular form of carbon, but has general validity for amorphous and disordered semiconductors

Electronic Resource Management and Design

Science.gov (United States)

Abrams, Kimberly R.

2015-01-01

We have now reached a tipping point at which electronic resources comprise more than half of academic library budgets. Because of the increasing work associated with the ever-increasing number of e-resources, there is a trend to distribute work throughout the library even in the presence of an electronic resources department. In 2013, the author…

σ-holes and π-holes: Similarities and differences.

Science.gov (United States)

Politzer, Peter; Murray, Jane S

2018-04-05

σ-Holes and π-holes are regions of molecules with electronic densities lower than their surroundings. There are often positive electrostatic potentials associated with them. Through these potentials, the molecule can interact attractively with negative sites, such as lone pairs, π electrons, and anions. Such noncovalent interactions, "σ-hole bonding" and "π-hole bonding," are increasingly recognized as being important in a number of different areas. In this article, we discuss and compare the natures and characteristics of σ-holes and π-holes, and factors that influence the strengths and locations of the resulting electrostatic potentials. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Ultrafast Interfacial Electron and Hole Transfer from CsPbBr3 Perovskite Quantum Dots.

Science.gov (United States)

Wu, Kaifeng; Liang, Guijie; Shang, Qiongyi; Ren, Yueping; Kong, Degui; Lian, Tianquan

2015-10-14

Recently reported colloidal lead halide perovskite quantum dots (QDs) with tunable photoluminescence (PL) wavelengths covering the whole visible spectrum and exceptionally high PL quantum yields (QYs, 50-90%) constitute a new family of functional materials with potential applications in light-harvesting and -emitting devices. By transient absorption spectroscopy, we show that the high PL QYs (∼79%) can be attributed to negligible electron or hole trapping pathways in CsPbBr3 QDs: ∼94% of lowest excitonic states decayed with a single-exponential time constant of 4.5 ± 0.2 ns. Furthermore, excitons in CsPbBr3 QDs can be efficiently dissociated in the presence of electron or hole acceptors. The half-lives of electron transfer (ET) to benzoquinone and subsequent charge recombination are 65 ± 5 ps and 2.6 ± 0.4 ns, respectively. The half-lives for hole transfer (HT) to phenothiazine and the subsequent charge recombination are 49 ± 6 ps and 1.0 ± 0.2 ns, respectively. The lack of electron and hole traps and fast interfacial ET and HT rates are key properties that may enable the development of efficient lead halide perovskite QDs-based light-harvesting and -emitting devices.

Phase-space holes due to electron and ion beams accelerated by a current-driven potential ramp

Directory of Open Access Journals (Sweden)

M. V. Goldman

2003-01-01

Full Text Available One-dimensional open-boundary simulations have been carried out in a current-carrying plasma seeded with a neutral density depression and with no initial electric field. These simulations show the development of a variety of nonlinear localized electric field structures: double layers (unipolar localized fields, fast electron phase-space holes (bipolar fields moving in the direction of electrons accelerated by the double layer and trains of slow alternating electron and ion phase-space holes (wave-like fields moving in the direction of ions accelerated by the double layer. The principal new result in this paper is to show by means of a linear stability analysis that the slow-moving trains of electron and ion holes are likely to be the result of saturation via trapping of a kinetic-Buneman instability driven by the interaction of accelerated ions with unaccelerated electrons.

Relation between bulk compressibility and surface energy of electron-hole liquids

International Nuclear Information System (INIS)

Singwi, K.S.; Tosi, M.P.

1979-08-01

Attention is drawn to the existence of an empirical relation chiσ/asup(*)sub(B) approximately 1 between the compressibility, the surface energy and the excitonic radius in electron-hole liquids. (author)

Dynamical effects of electron-hole correlation and giant quantum attenuation of ultrasound in semimetals

International Nuclear Information System (INIS)

Kuramoto, Y.

1982-01-01

The giant quantum attenuation of ultrasound in bismuth and other semimetals is noticeably enhanced when certain pair of Landau subbands of electrons and holes participate simultaneously in an attenuation peak. A theoretical analysis is presented which emphasizes importance of dynamical effects of the electron-hole correlation. In the temperature range between 1K and 4K covered by most experiments, the correlation effect is found to be weak on the real part of the relevant response function which gives change in sound velocity. This implies that equilibrium properties of the system are not much influenced by the correlation effect. Nonetheless, the electron-hole correlation is shown to have a drastic consequence on the imaginary part of the response function probed by the ultrasonic attenuation. Proposal for experiment is advanced to discriminate relative importance of this exciton-like correlation from that of repulsive correlation between carriers with the same charge. (orig.)

Impact ionization coefficients for electrons and holes in In0.14Ga0.86As

International Nuclear Information System (INIS)

Pearsall, T.P.; Nahory, R.E.; Pollack, M.A.

1975-01-01

We report the measurement of impact ionization rates for electrons and holes in the direct band-gap semiconductor alloy In 0 . 14 Ga 0 . 86 As. Our results show clearly that the ionization rate for holes is greater than that for electrons. The measurments were made for electric fields between 2.6times10 5 and 3.4times10 5 V cm -1 . In this range, the ionization coefficients can be expressed as α=α/sub infinity/ exp(-A/E) for electrons and β=β/sub infinity/ exp(-B/E) for holes with α/sub infinity/=1.0times10 9 cm -1 , A=3.6times10 6 V cm -1 , and β/sub infinity/=1.3times10 8 cm -1 , B=2.7times10 6 V cm -1

Time-dependence hole and electron trapping effects in SIMOX buried oxides

International Nuclear Information System (INIS)

Boesch, H.E. Jr.; Taylor, T.L.; Hite, L.R.; Bailey, W.E.

1990-01-01

Back-channel threshold shift associated with the buried oxide layers of separation by implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors (FETs) was measured following pulsed irradiation as a function of temperature and back-gate bias using a fast time-resolved I-V measurement technique. The SIMOX FETs showed large initial negative voltage shifts at 0.2 ms after irradiation followed by temperature- and bias-dependent additional negative shifts to 800s. Analysis and modeling of the results indicate efficient deep trapping of radiation-generated holes in the bulk of the oxide, substantial initial trapping of radiation-generated electrons in the oxide, and rapid removal of the trapped electrons by a thermal detrapping process. The ZMR FETs showed evidence of substantial trapping of holes alone in the oxide bulk

Electron-hole pairing and anomalous properties of layered high-Tc compounds

International Nuclear Information System (INIS)

Efetov, K.B.

1991-01-01

Band-structure pictures for layered high-T c materials available in the literature show that, besides the dispersive broad band responsible for metallic properties, there are at least two additional bands having minima and maxima near the Fermi surface. These additional bands belong to different planes (for example, CuO planes and BiO planes in Bi 2 Sr 2 CaCu 2 O 8 ) or to planes and chains (in YBa 2 Cu 3 O 7 ). Provided the Coulomb repulsion is not very weak, pairing of electrons and holes belonging to these additional bands in different planes or planes and chains is possible. It is shown that, if this possibility is realized, a transition in the additional bands into a state of an excitonic dielectric occurs. The spin of an electron-hole pair can be both 0 and 1. Due to the fact that the electron and the hole of the pair belong to different planes, there are no charge- or spin-density waves. This excitonic insulator can serve as a polarizing substance and give a strong attraction between electrons of the metallic band even if the bare interaction is repulsive. It is also shown that some interesting gapless excitations exist. Provided there are impurities in the system that scatter from plane to plane, these excitations are coupled to the electrons of the metallic band. This effective interaction can be described in terms of an effective mode P(ω) with ImP(ω)∼-sgnω. As a result, one can obtain such properties of the normal state as a linear dependence of the resistivity on temperature, linear dependence of the density of states on energy, constant background in the Raman-scattering intensity, large nuclear relaxation rate, etc., which are very well known from experiments

Monte Carlo studies of thermalization of electron-hole pairs in spin-polarized degenerate electron gas in monolayer graphene

Science.gov (United States)

Borowik, Piotr; Thobel, Jean-Luc; Adamowicz, Leszek

2018-02-01

Monte Carlo method is applied to the study of relaxation of excited electron-hole (e-h) pairs in graphene. The presence of background of spin-polarized electrons, with high density imposing degeneracy conditions, is assumed. To such system, a number of e-h pairs with spin polarization parallel or antiparallel to the background is injected. Two stages of relaxation: thermalization and cooling are clearly distinguished when average particles energy and its standard deviation σ _E are examined. At the very beginning of thermalization phase, holes loose energy to electrons, and after this process is substantially completed, particle distributions reorganize to take a Fermi-Dirac shape. To describe the evolution of and σ _E during thermalization, we define characteristic times τ _ {th} and values at the end of thermalization E_ {th} and σ _ {th}. The dependence of these parameters on various conditions, such as temperature and background density, is presented. It is shown that among the considered parameters, only the standard deviation of electrons energy allows to distinguish between different cases of relative spin polarizations of background and excited electrons.

Optical and magneto-optical properties of the electron-doped and hole-doped C{sub 82} crystal

Energy Technology Data Exchange (ETDEWEB)

Rostampour, E., E-mail: el_rostampour@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Koohi, A. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, Tehran (Iran, Islamic Republic of)

2015-01-15

The optical and magnetic properties of the doped C{sub 82} crystal have been investigated by Su–Schrieffer–Heeger (SSH) model, which is based on the Ewald method. When the C{sub 82} molecule is doped with one electron (or hole), a single electron is remained in the energy level that affects the optical and magnetic properties of the C{sub 82} crystal. The lattice and electronic structures of C{sub 82} changed with doping electron (or hole) in the molecule of C{sub 82}. Therefore, polarons are predicted in doped fullerenes. The obtained results showed that the dielectric tensor of the C{sub 82} crystal increased with doping electron (or hole) in the molecule of C{sub 82}. The spectral shapes of the dielectric tensor, circular dichroism and birefringence coefficient of the C{sub 82} crystal turn out to be determined mainly by the geometrical distributions of the pentagons in the fullerene structures.

Electron-hole drop (EHD) stability in deformation potential well

International Nuclear Information System (INIS)

Makarov, A.G.; Tikhodeev, S.G.

1984-01-01

In heterogeneously-deformed Ge the stability of electron-hole droplets (EHD) being in a potential well is considered. It is shown that the potential well effect is equivalent to the decrease of effective density of phonon EHD charge. It is pointed out that heating EHD (for example, by IR radiation), can increase the phonon droplet charge and affect its stability

Activity coefficients of electrons and holes in semiconductors

International Nuclear Information System (INIS)

Orazem, M.E.; Newman, J.

1984-01-01

Dilute-solution transport equations with constant activity coefficients are commonly used to model semiconductors. These equations are consistent with a Boltzmann distribution and are invalid in regions where the species concentration is close to the respective site concentration. A more rigorous treatment of transport in a semiconductor requires activity coefficients which are functions of concentration. Expressions are presented for activity coefficients of electrons and holes in semiconductors for which conduction- and valence-band energy levels are given by the respective bandedge energy levels. These activity coefficients are functions of concentration and are thermodynamically consistent. The use of activity coefficients in macroscopic transport relationships allows a description of electron transport in a manner consistent with the Fermi-Dirac distribution

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

International Nuclear Information System (INIS)

Lu, Yu-Hsuan; Pilkuhn, Manfred H.; Fu, Yi-Keng; Chu, Mu-Tao; Huang, Shyh-Jer; Su, Yan-Kuin; Wang, Kang L.

2014-01-01

The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lu, Yu-Hsuan; Pilkuhn, Manfred H. [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Fu, Yi-Keng; Chu, Mu-Tao [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Huang, Shyh-Jer, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electronic Engineering, Kun-Shan University, Tainan 71003, Taiwan (China); Wang, Kang L. [Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2014-03-21

The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

Electronic correlations in hole- and electron-doped Fe-based superconductors

Science.gov (United States)

Hardy, Frederic; Boehmer, Anna; Schweiss, Peter; Wolf, Thomas; Heid, Rolf; Eder, Robert; Fisher, Robert A.; Meingast, Christoph

2015-03-01

High-temperature superconductivity in the cuprates occurs at the crossover from a highly-correlated Mott insulating state to a weaker correlated Fermi liquid as a function of hole doping. The iron pnictides were initially thought to be fairly weakly correlated. However, we have recently shown using transport and thermodynamic measurements that KFe2As2 is strongly correlated. Both the Sommerfeld coefficient and the Pauli susceptibility are strongly enhanced with respect to their bare DFT values. These correlations are even further enhanced in RbFe2As2andCsFe2As2. The temperature dependence of both the susceptibility and the thermal expansion provides strong experimental evidence for the existence of a coherence-incoherence crossover; similar to what is found in heavy-fermion compounds. Whereas the correlations in the cuprates result from a large value of the Hubbard U, recent works have stressed the particular relevance of Hund's coupling in the pnictides. Our data may be interpreted in terms of a close proximity of KFe2As2 to an orbital-selective Mott transition. We now have good thermodynamic data covering both the hole and electron sides of the BaFe2As2 system and we will discuss how these correlations are modified by doping.

Molecular origin of differences in hole and electron mobility in amorphous Alq3--a multiscale simulation study.

Science.gov (United States)

Fuchs, Andreas; Steinbrecher, Thomas; Mommer, Mario S; Nagata, Yuki; Elstner, Marcus; Lennartz, Christian

2012-03-28

In order to determine the molecular origin of the difference in electron and hole mobilities of amorphous thin films of Alq(3) (meridional Alq(3) (tris(8-hydroxyquinoline) aluminium)) we performed multiscale simulations covering quantum mechanics, molecular mechanics and lattice models. The study includes realistic disordered morphologies, polarized site energies to describe diagonal disorder, quantum chemically calculated transfer integrals for the off-diagonal disorder, inner sphere reorganization energies and an approximative scheme for outer sphere reorganization energies. Intermolecular transfer rates were calculated via Marcus-theory and mobilities were simulated via kinetic Monte Carlo simulations and by a Master Equation approach. The difference in electron and hole mobility originates from the different localization of charge density in the radical anion (more delocalized) compared to the radical cation (more confined). This results in higher diagonal disorder for holes and less favourable overlap properties for the hole transfer integrals leading to an overall higher electron mobility.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Chi, Li-Feng, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2015-03-23

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

International Nuclear Information System (INIS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-01-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process

Enhancement of tunnel conductivity by Cooper pair fluctuations in electron-hole bilayer

International Nuclear Information System (INIS)

Efimkin, D K; Lozovik, Yu E

2012-01-01

Influence of Cooper pair fluctuations that are precursor of pairing of electrons and holes located on opposite surfaces of topological insulator film on tunnel conductivity between the surfaces is investigated. Due to restrictions caused by momentum and energy conservation dependence of tunnel conductivity on external bias voltage has peak that becomes more prominent with decreasing of disorder and temperature. We have shown that Cooper pair fluctuations considerably enhance tunneling and height of the peak diverges in vicinity of critical temperature with critical index ν = 2. Width of the peak tends to zero in proximity of critical temperature. Pairing of electrons and holes can be suppressed by disorder and in vicinity of quantum critical point height of the peak also diverges as function of Cooper pair damping with critical index μ = 2.

Electron and hole drift mobility measurements on methylammonium lead iodide perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Maynard, Brian; Long, Qi; Schiff, Eric A. [Department of Physics, Syracuse University, Syracuse, New York 13244 (United States); Yang, Mengjin; Zhu, Kai [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Kottokkaran, Ranjith; Abbas, Hisham; Dalal, Vikram L. [Iowa State University, Ames, Iowa 50011 (United States)

2016-04-25

We report nanosecond domain time-of-flight measurements of electron and hole photocarriers in methylammonium lead iodide perovskite solar cells. The mobilities ranged from 0.06 to 1.4 cm{sup 2}/Vs at room temperature, but there is little systematic difference between the two carriers. We also find that the drift mobilities are dispersive (time-dependent). The dispersion parameters are in the range of 0.4–0.7, and they imply that terahertz domain mobilities will be much larger than nanosecond domain mobilities. The temperature-dependences of the dispersion parameters are consistent with confinement of electron and hole transport to fractal-like spatial networks within nanoseconds of their photogeneration.

High-temperature electron-hole superfluidity with strong anisotropic gaps in double phosphorene monolayers

Science.gov (United States)

Saberi-Pouya, S.; Zarenia, M.; Perali, A.; Vazifehshenas, T.; Peeters, F. M.

2018-05-01

Excitonic superfluidity in double phosphorene monolayers is investigated using the BCS mean-field equations. Highly anisotropic superfluidity is predicted where we found that the maximum superfluid gap is in the Bose-Einstein condensate (BEC) regime along the armchair direction and in the BCS-BEC crossover regime along the zigzag direction. We estimate the highest Kosterlitz-Thouless transition temperature with maximum value up to ˜90 K with onset carrier densities as high as 4 ×1012cm-2 . This transition temperature is significantly larger than what is found in double electron-hole few-layers graphene. Our results can guide experimental research toward the realization of anisotropic condensate states in electron-hole phosphorene monolayers.

Ballistic hole magnetic microscopy

NARCIS (Netherlands)

Haq, E.; Banerjee, T.; Siekman, M.H.; Lodder, J.C.; Jansen, R.

2005-01-01

A technique to study nanoscale spin transport of holes is presented: ballistic hole magnetic microscopy. The tip of a scanning tunneling microscope is used to inject hot electrons into a ferromagnetic heterostructure, where inelastic decay creates a distribution of electron-hole pairs.

Transport Properties of an Electron-Hole Bilayer in Contact with a Superconductor Hybrid Junction

Science.gov (United States)

Bercioux, D.; Klapwijk, T. M.; Bergeret, F. S.

2017-08-01

We investigate the transport properties of a junction consisting of an electron-hole bilayer in contact with normal and superconducting leads. The electron-hole bilayer is considered as a semimetal with two electronic bands. We assume that in the region between the contacts the system hosts an exciton condensate described by a BCS-like model with a gap Γ in the quasiparticle density of states. We first discuss how the subgap electronic transport through the junction is mainly governed by the interplay between two kinds of reflection processes at the interfaces: the standard Andreev reflection at the interface between the superconductor and the exciton condensate, and a coherent crossed reflection at the semimetal-exciton-condensate interface that converts electrons from one layer into the other. We show that the differential conductance of the junction shows a minimum at voltages of the order of Γ /e . Such a minimum can be seen as a direct hallmark of the existence of the gapped excitonic state.

Numerical simulation of evolution of electron-hole avalanches and streamers in silicon in a uniform electric field

International Nuclear Information System (INIS)

Kyuregyan, A. S.

2010-01-01

Numerical simulation of origination and evolution of streamers in Si is performed for the first time. It is assumed that an external electric field E 0 is constant and uniform, the avalanche and streamer are axially symmetric, and background electrons and holes are absent. The calculations have been performed in the context of the diffusion-drift approximation with impact and tunneling ionization, Auger recombination, and electron-hole scattering taken into account. The most realistic values of the ionization and recombination rates, diffusion coefficients, and drift mobilities of electrons and holes have been used. It is shown that the features of evolution of avalanches and streamers are generally consistent with the result obtained previously for a hypothetic semiconductor with equal kinetic coefficients for electrons and holes. Asymmetry of these coefficients (mostly, the impact-ionization coefficients) manifests itself only at the initial stage of evolution. However, with time, two exponentially self-similar streamers are formed, differing only in the sign of charge of fronts and directions of their propagation. Empirical dependences of the main parameters of streamers on E 0 in the range of 0.34-0.75 MV/cm have been derived for this most important stage of evolution.

Theory of magnetostriction of electron-hole drops in Ge

International Nuclear Information System (INIS)

Markiewicz, R.S.

1978-01-01

A large mass of electron-hole liquid (γ drop) formed in a strain-induced potential well in Ge is known to distort its shape significantly in a magnetic field B > or approx. = 1 kG. It is shown in this paper that the shape change can be understood in detail as due to a ''recombination current'' of electron-hole pairs needed to replace those pairs which recombine in the drop volume. The Lorentz force deflects this current and produces a macroscopic dipole current loop inside the drop. The drop then changes shape to minimize its total energy, including magnetic, strain, and surface energies. While the drop usually flattens along the field direction, both para- and diamagnetic effects (elongated drops) are found to be possible, depending on excitation conditions, in accord with experiment. Similar effects are predicted to occur in small drops in unstrained Ge. This paper presents a magnetohydrodynamic theory of the magnetostriction which takes into account density variations which occur in the strain well and in high magnetic fields. A simpler theory is given for the special case in which the drop may be considered incompressible (small drops and moderate fields). Effects of carrier mass anisotropy and fluid viscosity are taken into consideration

Crossover between the dense electron-hole phase and the BCS excitonic phase in quantum dots

International Nuclear Information System (INIS)

Rodriguez, B.A.; Gonzalez, A.; Quiroga, L.; Capote, R.; Rodriguez, F.J.

1999-09-01

Second order perturbation theory and a Lipkin-Nogami scheme combined with an exact Monte Carlo projection after variation are applied to compute the ground-state energy of 6 ≤ N ≤ 210 electron-hole pairs confined in a parabolic two-dimensional quantum dot. The energy shows nice scaling properties as N or the confinement strength is varied. A crossover from the high-density electron-hole phase to the BCS excitonic phase is found at a density which is roughly four times the close-packing density of excitons. (author)

Electron, hole and exciton self-trapping in germanium doped silica glass from DFT calculations with self-interaction correction

International Nuclear Information System (INIS)

Du Jincheng; Rene Corrales, L.; Tsemekhman, Kiril; Bylaska, Eric J.

2007-01-01

Density functional theory (DFT) calculations were employed to understand the refractive index change in germanium doped silica glasses for the trapped states of electronic excitations induced by UV irradiation. Local structure relaxation and excess electron density distribution were calculated upon self-trapping of an excess electron, hole, and exciton in germanium doped silica glass. The results show that both the trapped exciton and excess electron are highly localized on germanium ion and, to some extent, on its oxygen neighbors. Exciton self-trapping is found to lead to the formation of a Ge E' center and a non-bridging hole center. Electron trapping changes the GeO 4 tetrahedron structure into trigonal bi-pyramid with the majority of the excess electron density located along the equatorial line. The self-trapped hole is localized on bridging oxygen ions that are not coordinated to germanium atoms that lead to elongation of the Si-O bonds and change of the Si-O-Si bond angles. We carried out a comparative study of standard DFT versus DFT with a hybrid PBE0 exchange and correlation functional. The results show that the two methods give qualitatively similar relaxed structure and charge distribution for electron and exciton trapping in germanium doped silica glass; however, only the PBE0 functional produces the self-trapped hole

Observation of Internal Photoinduced Electron and Hole Separation in Hybrid Two-Dimentional Perovskite Films.

Science.gov (United States)

Liu, Junxue; Leng, Jing; Wu, Kaifeng; Zhang, Jun; Jin, Shengye

2017-02-01

Two-dimensional (2D) organolead halide perovskites are promising for various optoelectronic applications. Here we report a unique spontaneous charge (electron/hole) separation property in multilayered (BA) 2 (MA) n-1 Pb n I 3n+1 (BA = CH 3 (CH 2 ) 3 NH 3 + , MA = CH 3 NH 3 + ) 2D perovskite films by studying the charge carrier dynamics using ultrafast transient absorption and photoluminescence spectroscopy. Surprisingly, the 2D perovskite films, although nominally prepared as "n = 4", are found to be mixture of multiple perovskite phases, with n = 2, 3, 4 and ≈ ∞, that naturally align in the order of n along the direction perpendicular to the substrate. Driven by the band alignment between 2D perovskites phases, we observe consecutive photoinduced electron transfer from small-n to large-n phases and hole transfer in the opposite direction on hundreds of picoseconds inside the 2D film of ∼358 nm thickness. This internal charge transfer efficiently separates electrons and holes to the upper and bottom surfaces of the films, which is a unique property beneficial for applications in photovoltaics and other optoelectronics devices.

Electron-hole pairs generated in ZrO2 nanoparticle resist upon exposure to extreme ultraviolet radiation

Science.gov (United States)

Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

2018-02-01

Metal oxide nanoparticle resists have attracted much attention as the next-generation resist used for the high-volume production of semiconductor devices. However, the sensitization mechanism of the metal oxide nanoparticle resists is unknown. Understanding the sensitization mechanism is important for the efficient development of resist materials. In this study, the energy deposition in a zirconium oxide (ZrO2) nanoparticle resist was investigated. The numbers of electron-hole pairs generated in a ZrO2 core and an methacrylic acid (MAA) ligand shell upon exposure to 1 mJ cm-2 (exposure dose) extreme ultraviolet (EUV) radiations were theoretically estimated to be 0.16 at most and 0.04-0.17 cm2 mJ-1, respectively. By comparing the calculated distribution of electron-hole pairs with the line-and-space patterns of the ZrO2 nanoparticle resist fabricated by an EUV exposure tool, the number of electron-hole pairs required for the solubility change of the resist films was estimated to be 1.3-2.2 per NP. NP denotes a nanoparticle consisting of a metal oxide core with a ligand shell. In the material design of metal oxide nanoparticle resists, it is important to efficiently use the electron-hole pairs generated in the metal oxide core for the chemical change of ligand molecules.

Electronic Resource Management Systems

Directory of Open Access Journals (Sweden)

Mark Ellingsen

2004-10-01

Full Text Available Computer applications which deal with electronic resource management (ERM are quite a recent development. They have grown out of the need to manage the burgeoning number of electronic resources particularly electronic journals. Typically, in the early years of e-journal acquisition, library staff provided an easy means of accessing these journals by providing an alphabetical list on a web page. Some went as far as categorising the e-journals by subject and then grouping the journals either on a single web page or by using multiple pages. It didn't take long before it was recognised that it would be more efficient to dynamically generate the pages from a database rather than to continually edit the pages manually. Of course, once the descriptive metadata for an electronic journal was held within a database the next logical step was to provide administrative forms whereby that metadata could be manipulated. This in turn led to demands for incorporating more information and more functionality into the developing application.

Landau damping effects on collision-induced quantum interference in electron-hole plasmas

International Nuclear Information System (INIS)

Hwa-Min, Kim; Young-Dae, Jung

2007-01-01

The Landau damping effects on the quantum interference in electron collisions are investigated in a quantum plasma composed of electrons and holes. The Born method and the total spin states are considered to obtain the scattering cross-section by using the effective screened potential model. It is found that the Landau damping effects enhance the scattering cross-section, especially, near the scattering angle θ L = π/4. (authors)

Landau damping effects on collision-induced quantum interference in electron-hole plasmas

Energy Technology Data Exchange (ETDEWEB)

Hwa-Min, Kim [Daegu Univ. Catholic, Dept. of Electronics Engineering (Korea, Republic of); Young-Dae, Jung [Hanyang Univ., Dept. of Applied Physics, Seoul (Korea, Republic of)

2007-07-15

The Landau damping effects on the quantum interference in electron collisions are investigated in a quantum plasma composed of electrons and holes. The Born method and the total spin states are considered to obtain the scattering cross-section by using the effective screened potential model. It is found that the Landau damping effects enhance the scattering cross-section, especially, near the scattering angle {theta}{sub L} = {pi}/4. (authors)

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

International Nuclear Information System (INIS)

Padilla, J. L.; Alper, C.; Ionescu, A. M.; Medina-Bailón, C.; Gámiz, F.

2015-01-01

We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of the inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher I ON levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M. [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Medina-Bailón, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain)

2015-06-29

We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of the inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher I{sub ON} levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.

Dynamical spin susceptibility of electron-doped high-Tc cuprates. Comparison with hole-doped systems

International Nuclear Information System (INIS)

Suzuki, Atsuo; Mutou, Tetsuya; Tanaka, Syunsuke; Hirashima, Dai S.

2010-01-01

The magnetic excitation spectrum of electron-doped copper oxide superconductors is studied by calculating the dynamical spin susceptibility of the two-dimensional Hubbard model in which a d x2-y2 -wave superconducting order parameter is assumed. The spectrum of electron-doped systems is compared with that of hole-doped systems, and the relationship between the frequency at which a peak grows in the spectrum and the superconducting energy gap at a hot spot is investigated. A peak may be observed even when the magnetic resonance condition is not exactly satisfied. We find that, in the electron-doped systems, the resonance condition is less likely to be satisfied than in the hole-doped systems because of the small density of states around the hot spots, and the peak frequency is close to twice the gap magnitude at the hot spots. (author)

Electronic Resources Management Project Presentation 2012

KAUST Repository

Ramli, Rindra M.

2012-11-05

This presentation describes the electronic resources management project undertaken by the KAUST library. The objectives of this project is to migrate information from MS Sharepoint to Millennium ERM module. One of the advantages of this migration is to consolidate all electronic resources into a single and centralized location. This would allow for better information sharing among library staff.

Many-particle correlations in quasi-two-dimensional electron-hole systems

International Nuclear Information System (INIS)

Nikolaev, Valentin

2002-01-01

This thesis reports a theoretical investigation of many-particle correlation effects in semiconductor heterostructures containing quantum wells. Particular attention is paid towards quasi-particle pair correlations. Using the Green's function technique and the ladder approximation as a basis, the generalized mass action law, which describes the redistribution of particles between correlated and uncorrelated states in quasi-two-dimensional systems for different temperatures and total densities, is derived. The expression is valid beyond the low-density limit, which allows us to investigate the transition of the system from a dilute exciton gas to a dense electron-hole plasma. A generalized Levinson theorem, which takes k-space filling into account, is formulated. Screening in quasi-two-dimensional systems is analyzed rigorously. Firstly, the qualitatively new mechanism of static local screening by indirect excitons is studied using the simple Thomas-Fermi approximation. Then, a detailed many-body description suitable for a proper account of dynamic screening by a quasi-2D electron-hole plasma, and consistent with the previously derived mass action law, is provided. The generalized Lindhard approximation and excitonic plasmon-pole approximations are also derived. The theory is applied to single and double quantum wells. A self-consistent procedure is developed for numerical investigation of the ionization degree of an electron-hole plasma at different values of temperature/exciton Rydberg ratios. This procedure accounts for screening, k-space filling (exciton bleaching), and the formation of excitons. An abrupt jump in the value of the ionization degree that happens with an increase of the carrier density or temperature (Mott transition) is found in a certain density-temperature region. It has been found that the critical density of the Mott transition for indirect excitons may be much smaller than that for direct excitons. A suggestion has been made that some of the

Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells.

Science.gov (United States)

Liu, Jun; Xue, Yuhua; Gao, Yunxiang; Yu, Dingshan; Durstock, Michael; Dai, Liming

2012-05-02

By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs(2)CO(3) to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetometry of low-dimensional electron and hole systems

Energy Technology Data Exchange (ETDEWEB)

Usher, A [School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom); Elliott, M [School of Physics and Astronomy, Cardiff University, Queens Buildings, Cardiff CF24 3AA (United Kingdom)], E-mail: a.usher@exeter.ac.uk, E-mail: elliottm@cf.ac.uk

2009-03-11

The high-magnetic-field, low-temperature magnetic properties of low-dimensional electron and hole systems reveal a wealth of fundamental information. Quantum oscillations of the thermodynamic equilibrium magnetization yield the total density of states, a central quantity in understanding the quantum Hall effect in 2D systems. The magnetization arising from non-equilibrium circulating currents reveals details, not accessible with traditional measurements, of the vanishingly small longitudinal resistance in the quantum Hall regime. We review how the technique of magnetometry has been applied to these systems, the most important discoveries that have been made, and their theoretical significance. (topical review)

K-shell-hole production, multiple-hole production, charge transfer, and antisymmetry

International Nuclear Information System (INIS)

Reading, J.F.; Ford, A.L.

1980-01-01

In calculating K-shell-hole production when an ion collides with an atom, account must be taken of the fact that processes involving electrons other than the K-shell electron can occur. For example, after making a K-shell hole an L-shell electron may be knocked into it, or an L-shell vacancy may be produced and the K-shell electron promoted to that vacancy in the ''Fermi sea'' of the target-atom orbitals. In 1973 a theorem was proved by one of the present authors demonstrating that all these multielectron processes cancel in an independent-particle model for the target atom. In this paper it is shown that the same thing occurs for hole production by charge transfer to the ion. The authors demonstrate that multihole production does not obey this simple rule and that the probability for multihole production is not the product of independent single-electron probabilities. The correct expressions that should be used for these processes are given, together with new results for charge-transfer processes accompanied by hole production

Resonant third-harmonic generation of a short-pulse laser from electron-hole plasmas

Energy Technology Data Exchange (ETDEWEB)

Kant, Niti [Department of Physics, Lovely Professional University, Phagwara, Punjab 144 402 (India); Nandan Gupta, Devki [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India); Suk, Hyyong [Advanced Photonics Research Institute (APRI) and Graduate Program of Photonics and Applied Physics, Gwangju Institute of Science and Technology, Gwangju 500 712 (Korea, Republic of)

2012-01-15

In semiconductors, free carriers are created in pairs in inter-band transitions and consist of an electron and its corresponding hole. At very high carrier densities, carrier-carrier collisions dominate over carrier-lattice collisions and carriers begin to behave collectively to form plasma. Here, we apply a short-pulse laser to generate third-harmonic radiation from a semiconductor plasma (electron-hole plasma) in the presence of a transverse wiggler magnetic-field. The process of third-harmonic generation of an intense short-pulse laser is resonantly enhanced by the magnetic wiggler, i.e., wiggler magnetic field provides the necessary momentum to third-harmonic photons. In addition, a high-power laser radiation, propagating through a semiconductor imparts an oscillatory velocity to the electrons and exerts a ponderomotive force on electrons at the third-harmonic frequency of the laser. This oscillatory velocity produces a third-harmonic longitudinal current. And due to the beating of the longitudinal electron velocity and the wiggler magnetic field, a transverse third-harmonic current is produced that drives third-harmonic electromagnetic radiation. It is finally observed that for a specific wiggler wave number value, the phase-matching conditions for the process are satisfied, leading to resonant enhancement in the energy conversion efficiency.

Resonant third-harmonic generation of a short-pulse laser from electron-hole plasmas

International Nuclear Information System (INIS)

Kant, Niti; Nandan Gupta, Devki; Suk, Hyyong

2012-01-01

In semiconductors, free carriers are created in pairs in inter-band transitions and consist of an electron and its corresponding hole. At very high carrier densities, carrier-carrier collisions dominate over carrier-lattice collisions and carriers begin to behave collectively to form plasma. Here, we apply a short-pulse laser to generate third-harmonic radiation from a semiconductor plasma (electron-hole plasma) in the presence of a transverse wiggler magnetic-field. The process of third-harmonic generation of an intense short-pulse laser is resonantly enhanced by the magnetic wiggler, i.e., wiggler magnetic field provides the necessary momentum to third-harmonic photons. In addition, a high-power laser radiation, propagating through a semiconductor imparts an oscillatory velocity to the electrons and exerts a ponderomotive force on electrons at the third-harmonic frequency of the laser. This oscillatory velocity produces a third-harmonic longitudinal current. And due to the beating of the longitudinal electron velocity and the wiggler magnetic field, a transverse third-harmonic current is produced that drives third-harmonic electromagnetic radiation. It is finally observed that for a specific wiggler wave number value, the phase-matching conditions for the process are satisfied, leading to resonant enhancement in the energy conversion efficiency.

PRINCIPLES OF CONTENT FORMATION EDUCATIONAL ELECTRONIC RESOURCE

Directory of Open Access Journals (Sweden)

О Ю Заславская

2017-12-01

Full Text Available The article considers modern possibilities of information and communication technologies for the design of electronic educational resources. The conceptual basis of the open educational multimedia system is based on the modular architecture of the electronic educational resource. The content of the electronic training module can be implemented in several versions of the modules: obtaining information, practical exercises, control. The regularities in the teaching process in modern pedagogical theory are considered: general and specific, and the principles for the formation of the content of instruction at different levels are defined, based on the formulated regularities. On the basis of the analysis, the principles of the formation of the electronic educational resource are determined, taking into account the general and didactic patterns of teaching.As principles of the formation of educational material for obtaining information for the electronic educational resource, the article considers: the principle of methodological orientation, the principle of general scientific orientation, the principle of systemic nature, the principle of fundamentalization, the principle of accounting intersubject communications, the principle of minimization. The principles of the formation of the electronic training module of practical studies in the article include: the principle of systematic and dose based consistency, the principle of rational use of study time, the principle of accessibility. The principles of the formation of the module for monitoring the electronic educational resource can be: the principle of the operationalization of goals, the principle of unified identification diagnosis.

Observation of topological surface states and strong electron/hole imbalance in extreme magnetoresistance compound LaBi

Science.gov (United States)

Jiang, J.; Schröter, N. B. M.; Wu, S.-C.; Kumar, N.; Shekhar, C.; Peng, H.; Xu, X.; Chen, C.; Yang, H. F.; Hwang, C.-C.; Mo, S.-K.; Felser, C.; Yan, B. H.; Liu, Z. K.; Yang, L. X.; Chen, Y. L.

2018-02-01

The recent discovery of the extreme magnetoresistance (XMR) in the nonmagnetic rare-earth monopnictides La X (X = P, As, Sb, Bi,), a recently proposed new topological semimetal family, has inspired intensive research effort in the exploration of the correlation between the XMR and their electronic structures. In this work, using angle-resolved photoemission spectroscopy to investigate the three-dimensional band structure of LaBi, we unraveled its topologically nontrivial nature with the observation of multiple topological surface Dirac fermions, as supported by our ab initio calculations. Furthermore, we observed substantial imbalance between the volume of electron and hole pockets, which rules out the electron-hole compensation as the primary cause of the XMR in LaBi.

Implementing CORAL: An Electronic Resource Management System

Science.gov (United States)

Whitfield, Sharon

2011-01-01

A 2010 electronic resource management survey conducted by Maria Collins of North Carolina State University and Jill E. Grogg of University of Alabama Libraries found that the top six electronic resources management priorities included workflow management, communications management, license management, statistics management, administrative…

Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Liu, Jun; Gao, Yunxiang; Yu, Dingshan; Dai, Liming [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Xue, Yuhua [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Institute of Advanced Materials for Nano-Bio Applications, School of Ophthalmology and Optometry, Wenzhou Medical College, Zhejiang 325027 (China); Durstock, Michael [Materials and Manufacturing Directorate, Air Force Research Laboratory, RXBP, Wright-Patterson Air Force Base, Ohio 45433 (United States)

2012-05-02

By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs{sub 2}CO{sub 3} to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electronic hole localization in rutile and anatase TiO2 - Self-interaction correction in Delta-SCF DFT

DEFF Research Database (Denmark)

Zawadzki, Pawel; Jacobsen, Karsten Wedel; Rossmeisl, Jan

2011-01-01

We study electronic hole localization in rutile and anatase titanium dioxide by means of Δ-Self-Consistent Field Density Functional Theory. In order to compare stabilities of the localized and the delocalized hole states we introduce a simple correction to the wrong description of the localizatio...

Managing electronic resources a LITA guide

CERN Document Server

Weir, Ryan O

2012-01-01

Informative, useful, current, Managing Electronic Resources: A LITA Guide shows how to successfully manage time, resources, and relationships with vendors and staff to ensure personal, professional, and institutional success.

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

Science.gov (United States)

Deng, Quanrong; Li, Yiqi; Chen, Lian; Wang, Shenggao; Wang, Geming; Sheng, Yonglong; Shao, Guosheng

2016-09-01

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

Uncorrelated electron-hole transition energy in GaN|InGaN|GaN spherical QDQW nanoparticles

International Nuclear Information System (INIS)

Haddou El Ghazi; Anouar Jorio and Izeddine Zorkani

2013-01-01

The electron (hole) energy and uncorrelated 1S e - 1S h electron-hole transition in Core(GaN)|well(In x Ga 1-x N)|shell(GaN) spherical QDQW nanoparticles is investigated as a function of the inner and the outer radii. The calculations are performed within the framework of the effective-mass approximation and the finite parabolic potential confinement barrier in which two confined parameters are taking account. The Indium composition effect is also investigated. A critical value of the outer and the inner ratio is obtained which constitutes the turning point of two indium composition behaviors. (author)

Formation of electrostatic double-layers and electron-holes in a low pressure mercury plasma column

International Nuclear Information System (INIS)

Petraconi, G; Maciel, Homero S

2003-01-01

Experimental studies of the formation of electrostatic double layers (DLs) and electron-holes (e-holes) are reported. The measurements were performed in the positive column of a mercury arc discharge operating in the low-pressure range of (2.0-14.0) x 10 -2 Pa with current density in the range of (3.0-8.0) x 10 3 A m -2 . Stable and unstable modes of the discharge were identified as the current was gradually increased, keeping constant the vapour pressure. The discharge remains stable until a critical current from which a slight increase of the current leads to an unstable regime characterized by high discharge impedance and strong oscillations. This mode ceased after a DL was formed in the plasma column. To induce the DL formation and to transport it smoothly along the discharge column, a low intensity B-field (7-10) x 10 -3 T produced by a movable single coil was used. The B-field locally increases the electron current density and makes the DL form at the centre of the magnetic constriction where it remained at rest. Electrostatic potential structures compatible with ordinary DLs and multiple-layers could be formed in the plasma column by dealing with the combined effects of the operational parameters of the discharge. It is noticeable that a pure e-hole, which is a symmetric triple-layer having a bell shape potential profile, could easily be formed by means of this experimental technique. A partial kinetic description, based on the space charge structure derived from an experimental e-hole, is presented in order to infer the charged particle populations that could contribute to the space charge of the e-hole. Evidence is shown that strong e-hole formation might be driven by an ion beam, therefore it could not be formed in isolation since its formation requires a nearby ion accelerating potential structure. Probe measurements of the plasma properties, at various radial positions of the stable positive column, are also presented. In the stable mode, prior to

Luminescence of high density electron-hole plasma in CdS and CdSe in a wide temperature range

International Nuclear Information System (INIS)

Yoshida, H.; Shionoya, S.

1983-01-01

Time-resolved spectra of the spontaneous luminescence of the high density electron-hole plasma (EHP) in CdS and CdSe are observed in a wide range of temperature which is surely higher than the calculated critical temperature for electron-hole liquid formation, in order to carry forward discussion on dynamic nature of the EHP previously observed in 4.2 K experiments. Spectra in the late stage are analyzed, and obtained values of the reduced bandgap energy and chemical potential are compared with those theoretically calculated for higher temperatures. The aspects of the change of the spectral shape in the late stage are hard to understand. Unfortunately no clear conclusion is drawn on the nature of the EHP produced at 4.2 K. The only thing one can say is that the condensed electron-hole liquid state, which is in equilibrium with the exciton state, is not realized. (author)

30 CFR 77.1505 - Auger holes; blocking.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Auger holes; blocking. 77.1505 Section 77.1505 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH... § 77.1505 Auger holes; blocking. Auger holes shall be blocked with highwall spoil or other suitable...

Broadband Cooling Spectra of Hot Electrons and Holes in PbSe Quantum Dots

NARCIS (Netherlands)

Spoor, F.C.M.; Tomić, Stanko; Houtepen, A.J.; Siebbeles, L.D.A.

2017-01-01

Understanding cooling of hot charge carriers in semiconductor quantum dots (QDs) is of fundamental interest and useful to enhance the performance of QDs in photovoltaics. We study electron and hole cooling dynamics in PbSe QDs up to high energies where carrier multiplication occurs. We

30 CFR 77.1011 - Drill holes; guarding.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Drill holes; guarding. 77.1011 Section 77.1011 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH... Control § 77.1011 Drill holes; guarding. Drill holes large enough to constitute a hazard shall be covered...

Rate constant of free electrons and holes recombination in thin films CdSe

International Nuclear Information System (INIS)

Radychev, N.A.; Novikov, G.F.

2006-01-01

Destruction kinetics of electrons generated in thin films CdSe by laser impulse (wave length is 337 nm, period of impulse - 8 nc) is studied by the method of microwave photoconductivity (36 GHz) at 295 K. Model of the process was suggested using the analysis of kinetics of photo-responses decay, and it allowed determination of rate constant of recombination of free electrons and holes in cadmium selenide - (4-6)x10 -11 cm 3 s -1 [ru

30 CFR 57.7055 - Intersecting holes.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Intersecting holes. 57.7055 Section 57.7055... Jet Piercing Drilling-Surface and Underground § 57.7055 Intersecting holes. Holes shall not be drilled where there is a danger of intersecting a misfired hole or a hole containing explosives, blasting agents...

Electron and hole spectrum in InAs quantum dot renormalized by InAs/GaAs heterostructure deformation

International Nuclear Information System (INIS)

Dan'kiv, O.O.; Peleshchak, R.M.

2005-01-01

Analytical expressions describing the energy spectrum of electrons and holes are obtained for a quantum dot occurring in a self-consistent strain field created by an array of coherently stressed quantum dots. A method of taking into account the lattice mismatch at the quantum dot-matrix interface is proposed that allows for the dependence of the mismatch parameter on the quantum dot size and the matrix layer thickness. It is shown that the internal elastic strain arising at the quantum dot-matrix interface influences the energy spectrum of electrons more significantly than the spectrum of holes [ru

The inversion layer of electric fields and electron phase-space-hole structure during two-dimensional collisionless magnetic reconnection

International Nuclear Information System (INIS)

Chen Lijen; Lefebvre, Bertrand; Torbert, Roy B.; Daughton, William S.

2011-01-01

Based on two-dimensional fully kinetic simulations that resolve the electron diffusion layer in undriven collisionless magnetic reconnection with zero guide field, this paper reports the existence and evolution of an inversion layer of bipolar electric fields, its corresponding phase-space structure (an electron-hole layer), and the implication to collisionless dissipation. The inversion electric field layer is embedded in the layer of bipolar Hall electric field and extends throughout the entire length of the electron diffusion layer. The electron phase-space hole structure spontaneously arises during the explosive growth phase when there exist significant inflows into the reconnection layer, and electrons perform meandering orbits across the layer while being cyclotron-turned toward the outflow directions. The cyclotron turning of meandering electrons by the magnetic field normal to the reconnection layer is shown to be a primary factor limiting the current density in the region where the reconnection electric field is balanced by the gradient (along the current sheet normal) of the off-diagonal electron pressure-tensor.

Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

International Nuclear Information System (INIS)

Li, Wei; Zhang, Qin; Kirillov, Oleg A.; Levin, Igor; Richter, Curt A.; Gundlach, David J.; Nguyen, N. V.; Bijesh, R.; Datta, S.; Liang, Yiran; Peng, Lian-Mao; Liang, Xuelei

2014-01-01

We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al 2 O 3 /InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al 2 O 3 conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al 2 O 3 valence band to the bottom of the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance

30 CFR 56.7055 - Intersecting holes.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Intersecting holes. 56.7055 Section 56.7055... Piercing Drilling § 56.7055 Intersecting holes. Holes shall not be drilled where there is a danger of intersecting a misfired hole or a hole containing explosives blasting agents, or detonators. [56 FR 46508, Sept...

Theory of Weak Bipolar Fields and Electron Holes with Applications to Space Plasmas

International Nuclear Information System (INIS)

Goldman, Martin V.; Newman, David L.; Mangeney, Andre

2007-01-01

A theoretical model of weak electron phase-space holes is used to interpret bipolar field structures observed in space. In the limit eφ max /T e max sech 4 (x/α), where φ max depends on the derivative of the trapped distribution at the separatrix, while α depends only on a screening integral over the untrapped distribution. Idealized trapped and passing electron distributions are inferred from the speed, amplitude, and shape of satellite waveform measurements of weak bipolar field structures

Electron and hole doping effects in Sr{sub 2}FeMoO{sub 6} double perovskites

Energy Technology Data Exchange (ETDEWEB)

Sanchez, D. E-mail: diana.sanchez@icmm.csic.es; Alonso, J.A.; Garcia-Hernandez, M.; Martinez-Lope, M.J.; Casais, M.T.; Martinez, J.L.; Fernandez-Diaz, M.T

2004-05-01

Electron and hole doping effects in the ferromagnetic and structural properties of the double perovskite Sr{sub 2}FeMoO{sub 6} are studied along the series Sr{sub 2-x}La{sub x}FeMoO{sub 6} (0{<=}x{<=}1) and Sr{sub 2-x}FeMoO{sub 6} (0{<=}x{<=}0.4) from neutron powder diffraction and magnetization data. Sr-deficient samples (hole doped) show moderate changes in the structure and both T{sub c} and M{sub s} rapidly decrease with x. On the contrary, a change from tetragonal to monoclinic symmetry and a non monotonic behaviour in T{sub c} is found in the La-substituted series (electron doped)

Correlated proton-electron hole dynamics in protonated water clusters upon extreme ultraviolet photoionization

Directory of Open Access Journals (Sweden)

Zheng Li

2016-07-01

Full Text Available The ultrafast nuclear and electronic dynamics of protonated water clusters H+(H2On after extreme ultraviolet photoionization is investigated. In particular, we focus on cluster cations with n = 3, 6, and 21. Upon ionization, two positive charges are present in the cluster related to the excess proton and the missing electron, respectively. A correlation is found between the cluster's geometrical conformation and initial electronic energy with the size of the final fragments produced. For situations in which the electron hole and proton are initially spatially close, the two entities become correlated and separate in a time-scale of 20 to 40 fs driven by strong non-adiabatic effects.

Correlated proton-electron hole dynamics in protonated water clusters upon extreme ultraviolet photoionization

Science.gov (United States)

Li, Zheng; Vendrell, Oriol

2016-01-01

The ultrafast nuclear and electronic dynamics of protonated water clusters H+(H2O)n after extreme ultraviolet photoionization is investigated. In particular, we focus on cluster cations with n = 3, 6, and 21. Upon ionization, two positive charges are present in the cluster related to the excess proton and the missing electron, respectively. A correlation is found between the cluster's geometrical conformation and initial electronic energy with the size of the final fragments produced. For situations in which the electron hole and proton are initially spatially close, the two entities become correlated and separate in a time-scale of 20 to 40 fs driven by strong non-adiabatic effects. PMID:26798842

Gender Analysis Of Electronic Information Resource Use: The Case ...

African Journals Online (AJOL)

Based on the findings the study concluded that access and use of electronic information resources creates a “social digital divide” along gender lines. The study ... Finally, the library needs to change its marketing strategies on the availability of electronic information resources to increase awareness of these resources.

Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

1998-02-01

Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

Users satisfaction with electronic information resources and services ...

African Journals Online (AJOL)

This study investigated users satisfaction on the use of electronic information resources and services in MTN Net libraries in ABU & UNIBEN. Two objectives and one null hypotheses were formulated and tested with respect to the users' satisfaction on electronic information resources and services in MTN Net libraries in ...

Breakdown of the one-electron picture in XPS, XES and AES spectra involving 4s and 4p holes in Pd to Xe

International Nuclear Information System (INIS)

Ohno, M.; Wendin, G.

1981-01-01

Certain XES spectra of Pd to Xe have been calculated using diagrammatic many-body theory within the framework of a free atom calculation. Both XPS an XES spectra demonstrate breakdown of the one-electron picture of a 4p hole due to strong dynamical grant-Coster Kronig (gCK) fluctuation and decay processes. For a 4s hole, there is a large energy shift due to gCK fluctuation, but an effective one-electron model of the 4s hole is valid. For elements Cd to Te, gCK fluctuation and decay lead to broad continuance spectrum and breakdown of the 4p model. Breakdown of the one-electron, or even quasi-particle, model must occur when 4s and 4p holes are part of multiple vacancies

Electron-positron pairs in physics and astrophysics: From heavy nuclei to black holes

Science.gov (United States)

Ruffini, Remo; Vereshchagin, Gregory; Xue, She-Sheng

2010-02-01

Due to the interaction of physics and astrophysics we are witnessing in these years a splendid synthesis of theoretical, experimental and observational results originating from three fundamental physical processes. They were originally proposed by Dirac, by Breit and Wheeler and by Sauter, Heisenberg, Euler and Schwinger. For almost seventy years they have all three been followed by a continued effort of experimental verification on Earth-based experiments. The Dirac process, e+e-→2γ, has been by far the most successful. It has obtained extremely accurate experimental verification and has led as well to an enormous number of new physics in possibly one of the most fruitful experimental avenues by introduction of storage rings in Frascati and followed by the largest accelerators worldwide: DESY, SLAC etc. The Breit-Wheeler process, 2γ→e+e-, although conceptually simple, being the inverse process of the Dirac one, has been by far one of the most difficult to be verified experimentally. Only recently, through the technology based on free electron X-ray laser and its numerous applications in Earth-based experiments, some first indications of its possible verification have been reached. The vacuum polarization process in strong electromagnetic field, pioneered by Sauter, Heisenberg, Euler and Schwinger, introduced the concept of critical electric field Ec=me2c3/(eħ). It has been searched without success for more than forty years by heavy-ion collisions in many of the leading particle accelerators worldwide. The novel situation today is that these same processes can be studied on a much more grandiose scale during the gravitational collapse leading to the formation of a black hole being observed in Gamma Ray Bursts (GRBs). This report is dedicated to the scientific race. The theoretical and experimental work developed in Earth-based laboratories is confronted with the theoretical interpretation of space-based observations of phenomena originating on cosmological

Optical conductivity calculation of a k.p model semiconductor GaAs incorporating first-order electron-hole vertex correction

Science.gov (United States)

Nurhuda, Maryam; Aziz Majidi, Muhammad

2018-04-01

The role of excitons in semiconducting materials carries potential applications. Experimental results show that excitonic signals also appear in optical absorption spectra of semiconductor system with narrow gap, such as Gallium Arsenide (GaAs). While on the theoretical side, calculation of optical spectra based purely on Density Functional Theory (DFT) without taking electron-hole (e-h) interactions into account does not lead to the appearance of any excitonic signal. Meanwhile, existing DFT-based algorithms that include a full vertex correction through Bethe-Salpeter equation may reveal an excitonic signal, but the algorithm has not provided a way to analyze the excitonic signal further. Motivated to provide a way to isolate the excitonic effect in the optical response theoretically, we develop a method of calculation for the optical conductivity of a narrow band-gap semiconductor GaAs within the 8-band k.p model that includes electron-hole interactions through first-order electron-hole vertex correction. Our calculation confirms that the first-order e-h vertex correction reveals excitonic signal around 1.5 eV (the band gap edge), consistent with the experimental data.

Atomistic Tight-Binding Theory of Electron-Hole Exchange Interaction in Morphological Evolution of CdSe/ZnS Core/Shell Nanodisk to CdSe/ZnS Core/Shell Nanorod

Directory of Open Access Journals (Sweden)

Worasak Sukkabot

2016-01-01

Full Text Available Based on the atomistic tight-binding theory (TB and a configuration interaction (CI description, the electron-hole exchange interaction in the morphological transformation of CdSe/ZnS core/shell nanodisk to CdSe/ZnS core/shell nanorod is described with the aim of understanding the impact of the structural shapes on the change of the electron-hole exchange interaction. Normally, the ground hole states confined in typical CdSe/ZnS core/shell nanocrystals are of heavy hole-like character. However, the atomistic tight-binding theory shows that a transition of the ground hole states from heavy hole-like to light hole-like contribution with the increasing aspect ratios of the CdSe/ZnS core/shell nanostructures is recognized. According to the change in the ground-state hole characters, the electron-hole exchange interaction is also significantly altered. To do so, optical band gaps, ground-state electron character, ground-state hole character, oscillation strengths, ground-state coulomb energies, ground-state exchange energies, and dark-bright (DB excitonic splitting (stoke shift are numerically demonstrated. These atomistic computations obviously show the sensitivity with the aspect ratios. Finally, the alteration in the hole character has a prominent effect on dark-bright (DB excitonic splitting.

Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

Science.gov (United States)

Siddique, M.; Jamil, M.; Rasheed, A.; Areeb, F.; Javed, Asif; Sumera, P.

2018-01-01

We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

Solution-processable ambipolar diketopyrrolopyrrole-selenophene polymer with unprecedentedly high hole and electron mobilities.

Science.gov (United States)

Lee, Junghoon; Han, A-Reum; Kim, Jonggi; Kim, Yiho; Oh, Joon Hak; Yang, Changduk

2012-12-26

There is a fast-growing demand for polymer-based ambipolar thin-film transistors (TFTs), in which both n-type and p-type transistor operations are realized in a single layer, while maintaining simplicity in processing. Research progress toward this end is essentially fueled by molecular engineering of the conjugated backbones of the polymers and the development of process architectures for device fabrication, which has recently led to hole and electron mobilities of more than 1.0 cm(2) V(-1) s(-1). However, ambipolar polymers with even higher performance are still required. By taking into account both the conjugated backbone and side chains of the polymer component, we have developed a dithienyl-diketopyrrolopyrrole (TDPP) and selenophene containing polymer with hybrid siloxane-solubilizing groups (PTDPPSe-Si). A synergistic combination of rational polymer backbone design, side-chain dynamics, and solution processing affords an enormous boost in ambipolar TFT performance, resulting in unprecedentedly high hole and electron mobilities of 3.97 and 2.20 cm(2) V(-1) s(-1), respectively.

Prediction and Observation of Electron Instabilities and Phase Space Holes Concentrated in the Lunar Plasma Wake

Science.gov (United States)

Hutchinson, Ian H.; Malaspina, David M.

2018-05-01

Recent theory and numerical simulation predicts that the wake of the solar wind flow past the Moon should be the site of electrostatic instabilities that give rise to electron holes. These play an important role in the eventual merging of the wake with the background solar wind. Analysis of measurements from the ARTEMIS satellites, orbiting the Moon at distances from 1.2 to 11 RM, detects holes highly concentrated in the wake, in agreement with prediction. The theory also predicts that the hole flux density observed should be hollow, peaking away from the wake axis. Observation statistics qualitatively confirm this hollowness, lending extra supporting evidence for the identification of their generation mechanism.

Separation of electron and hole dynamics in the semimetal LaSb

Energy Technology Data Exchange (ETDEWEB)

Han, F.; Xu, J.; Botana, A. S.; Xiao, Z. L.; Wang, Y. L.; Yang, W. G.; Chung, D. Y.; Kanatzidis, M. G.; Norman, M. R.; Crabtree, G. W.; Kwok, W. K.

2017-09-01

We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov–de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first-principles calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence.We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strong magnetic-field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multiband materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.

G-factors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

NARCIS (Netherlands)

Bree, van J.; Silov, A.Yu.; Koenraad, P.M.; Flatté, M.E.; Pryor, C.E.

2012-01-01

The electron, hole, and exciton g factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g factor and

30 CFR 57.9360 - Shelter holes.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Shelter holes. 57.9360 Section 57.9360 Mineral....9360 Shelter holes. (a) Shelter holes shall be— (1) Provided at intervals adequate to assure the safety... farthest projection of moving equipment. (b) Shelter holes shall not be used for storage unless a 40-inch...

Organizational matters of competition in electronic educational resources

Directory of Open Access Journals (Sweden)

Ирина Карловна Войтович

2015-12-01

Full Text Available The article examines the experience of the Udmurt State University in conducting competitions of educational publications and electronic resources. The purpose of such competitions is to provide methodological support to educational process. The main focus is on competition of electronic educational resources. The technology of such contests is discussed through detailed analysis of the main stages of the contest. It is noted that the main task of the preparatory stage of the competition is related to the development of regulations on competition and the definition of criteria for selection of the submitted works. The paper also proposes a system of evaluation criteria of electronic educational resources developed by members of the contest organizing committee and jury members. The article emphasizes the importance of not only the preparatory stages of the competition, but also measures for its completion, aimed at training teachers create quality e-learning resources.

30 CFR 77.1010 - Collaring holes.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Collaring holes. 77.1010 Section 77.1010... Control § 77.1010 Collaring holes. (a) Starter steels shall be used when collaring holes with hand-held drills. (b) Men shall not hold the drill steel while collaring holes, or rest their hands on the chuck or...

Electromagnetic interactions in an electron-hole plasma

International Nuclear Information System (INIS)

1977-01-01

Certain problems electromagnetic interactions both of external SHF radiation with an electron-hole (eh) plasma and in the plasma itself are considered. The production and properties of a non-equilibrium eh plasma in semiconductors, pinch effect in a plasma of solids, strong electric fields in a plasma of inhomogeneous semiconductors and heat effects in a semiconductor plasma are discussed. The influence of a surface, kinetics of recombination processes in the semiconductor volume and the plasma statistics the spatial distribution of carriers, current characteristics and plasma recombination radiation under the conditions of pinch effect is described. The diagnostics methods of the phenomena are presented. The behaviour of diode structures with pn transitions in strong SHF fields is discussed. Special attention is paid to collective phenomena in the plasma of semiconductor devices and the variation of carrier density in strong fields. The appearance of electromotive force in inhomogeneous diode structures placed in strong SHF fields is considered

Simultaneous effects of electron-hole correlation, hydrostatic pressure, and temperature on the third harmonic generation in parabolic GaAs quantum dots

International Nuclear Information System (INIS)

Duque, C. M.; Mora-Ramos, M. E.; Duque, C. A.

2011-01-01

The combined effects of electron-hole correlation, hydrostatic pressure, and temperature on the third harmonic generation in disk-shaped parabolic GaAs quantum dots are studied under the density matrix formalism and the effective mass approximation. Two well-defined regimes are discussed: (1) the strong-confinement regime, where the Coulomb interaction between the electron and hole is neglected and (2) the weak-confinement regime where the parabolic confinement term is neglected and the system reaches the limit of a hydrogenic problem. The results show that the third harmonic-generation coefficient is strongly dependent on the localization of the electron-hole pair. Also, that by using external perturbations like hydrostatic pressure or by considering the temperature effects it is possible to induce a blue-shift and/or red-shift on the resonant peaks of the third harmonic generation coefficient.

Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-Tc superconductors

International Nuclear Information System (INIS)

Moritz, B; Johnston, S; Greven, M; Shen, Z-X; Devereaux, T P; Schmitt, F; Meevasana, W; Motoyama, E M; Lu, D H; Kim, C; Scalettar, R T

2009-01-01

Recently, angle-resolved photoemission spectroscopy (ARPES) has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). This paper demonstrates, using a combination of new ARPES measurements and quantum Monte Carlo simulations, that the HEA is not simply the by-product of matrix element effects, but rather represents a cross-over from a quasi-particle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character, in both hole- and electron-doped cuprates. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. the 'waterfall'-like behavior, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying both hole and electron doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram.

Vlasov simulations of electron hole dynamics in inhomogeneous magnetic field

Science.gov (United States)

Kuzichev, Ilya; Vasko, Ivan; Agapitov, Oleksiy; Mozer, Forrest; Artemyev, Anton

2017-04-01

Electron holes (EHs) or phase space vortices are solitary electrostatic waves existing due to electrons trapped within EH electrostatic potential. Since the first direct observation [1], EHs have been widely observed in the Earth's magnetosphere: in reconnecting current sheets [2], injection fronts [3], auroral region [4], and many other space plasma systems. EHs have typical spatial scales up to tens of Debye lengths, electric field amplitudes up to hundreds of mV/m and propagate along magnetic field lines with velocities of about electron thermal velocity [5]. The role of EHs in energy dissipation and supporting of large-scale potential drops is under active investigation. The accurate interpretation of spacecraft observations requires understanding of EH evolution in inhomogeneous plasma. The critical role of plasma density gradients in EH evolution was demonstrated in [6] using PIC simulations. Interestingly, up to date no studies have addressed a role of magnetic field gradients in EH evolution. In this report, we use 1.5D gyrokinetic Vlasov code to demonstrate the critical role of magnetic field gradients in EH dynamics. We show that EHs propagating into stronger (weaker) magnetic field are decelerated (accelerated) with deceleration (acceleration) rate dependent on the magnetic field gradient. Remarkably, the reflection points of decelerating EHs are independent of the average magnetic field gradient in the system and depend only on the EH parameters. EHs are decelerated (accelerated) faster than would follow from the "quasi-particle" concept assuming that EH is decelerated (accelerated) entirely due to the mirror force acting on electrons trapped within EH. We demonstrate that EH propagation in inhomogeneous magnetic fields results in development of a net potential drop along an EH, which depends on the magnetic field gradient. The revealed features will be helpful for interpreting spacecraft observations and results of advanced particle simulations. In

Spin polarized and density modulated phases in symmetric electron-electron and electron-hole bilayers.

Science.gov (United States)

Kumar, Krishan; Moudgil, R K

2012-10-17

We have studied symmetric electron-electron and electron-hole bilayers to explore the stable homogeneous spin phase and the feasibility of inhomogeneous charge-/spin-density ground states. The former is resolved by comparing the ground-state energies in states of different spin polarizations, while the latter is resolved by searching for a divergence in the wavevector-dependent static charge/spin susceptibility. For this endeavour, we have used the dielectric approach within the self-consistent mean-field theory of Singwi et al. We find that the inter-layer interactions tend to change an abrupt spin-polarization transition of an isolated layer into a nearly gradual one, even though the partially spin-polarized phases are not clearly stable within the accuracy of our calculation. The transition density is seen to decrease with a reduction in layer spacing, implying a suppression of spin polarization by inter-layer interactions. Indeed, the suppression shows up distinctly in the spin susceptibility computed from the spin-polarization dependence of the ground-state energy. However, below a critical layer spacing, the unpolarized liquid becomes unstable against a charge-density-wave (CDW) ground state at a density preceding full spin polarization, with the transition density for the CDW state increasing on further reduction in the layer spacing. Due to attractive e-h correlations, the CDW state is found to be more pronounced in the e-h bilayer. On the other hand, the static spin susceptibility diverges only in the long-wavelength limit, which simply represents a transition to the homogeneous spin-polarized phase.

Disappearance of electron-hole asymmetry in nanoparticles of Nd1−xCaxMnO3(x=0.6,0.4): magnetization and electron paramagnetic resonance evidence

International Nuclear Information System (INIS)

Bhagyashree, K. S.; Bhat, S. V.

2015-01-01

We study and compare magnetic and electron paramagnetic resonance behaviors of bulk and nanoparticles of Nd 1−x Ca x MnO 3 in hole doped (x=0.4;NCMOH) and electron doped (x=0.6;NCMOE) samples. NCMOH in bulk form shows a complex temperature dependence of magnetization M(T), with a charge ordering transition at ∼250 K, an antiferromagnetic (AFM) transition at ∼150 K, and a transition to a canted AFM phase/mixed phase at ∼80 K. Bulk NCMOE behaves quite differently with just a charge ordering transition at ∼280 K, thus providing a striking example of the so called electron-hole asymmetry. While our magnetization data on bulk samples are consistent with the earlier reports, the new results on the nanoparticles bring out drastic effects of size reduction. They show that M(T) behaviors of the two nanosamples are essentially similar in addition to the absence of the charge order in them thus providing strong evidence for vanishing of the electron-hole asymmetry in nanomanganites. This conclusion is further corroborated by electron paramagnetic resonance studies which show that the large difference in the “g” values and their temperature dependences found for the two bulk samples disappears as they approach a common behavior in the corresponding nanosamples

CHALLENGES OF ELECTRONIC INFORMATION RESOURCES IN ...

African Journals Online (AJOL)

This paper discusses the role of policy for proper and efficient library services in the electronic era. It points out some of the possible dangers of embarking in electronic resources without a proper focus at hand. Thus, it calls for today's librarians and policy makers to brainstorm and come up with working policies suitable to ...

Improved organic light-emitting device with tris-(8-hydroxyquinoline) aluminium inserted between hole-injection layer and hole-transporting layer

Energy Technology Data Exchange (ETDEWEB)

Divayana, Y [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Sun, X W [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Chen, B J [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Sarma, K R [Aerospace Electronic Systems, Honeywell, 21111 N 19th Avenue, Phoenix, AZ 85027 (United States)

2007-01-07

A layer of tris-(8-hydroxyquinoline) aluminium (Alq{sub 3}), which is normally used as an electron-transporting and emissive layer, was incorporated between the hole-transporting layer and the hole-injection layer to balance the electron-hole injection. The Alq{sub 3} layer performed to block the hole current which is a majority carrier in a typical organic light-emitting device. An increase in current efficiency by almost 30%, from 3.1 to 4.0 cd A{sup -1}, with a minimum voltage shift was achieved with a 2 nm Alq{sub 3} layer as a hole-blocking layer. A reduction in HTL thickness was observed to reduce the efficiency due to electron leakage to the HIL, whereby an inefficient exciplex emission was observed.

Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires.

Science.gov (United States)

Tedeschi, D; De Luca, M; Granados Del Águila, A; Gao, Q; Ambrosio, G; Capizzi, M; Tan, H H; Christianen, P C M; Jagadish, C; Polimeni, A

2016-10-12

The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III-V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field (B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is m e ∥ = (0.078 ± 0.002) m 0 (m 0 is the electron mass in vacuum) and perpendicular to ĉ is m e ⊥ = (0.093 ± 0.001) m 0 , resulting in a 20% mass anisotropy. Holes exhibit a much larger (∼320%) and opposite mass anisotropy with their effective mass along and perpendicular to ĉ equal to m h ∥ = (0.81 ± 0.18) m 0 and m h ⊥ = (0.250 ± 0.016) m 0 , respectively. While no full consensus is found with current theoretical results on WZ InP, our findings show trends remarkably similar to the experimental data available in WZ bulk materials, such as InN, GaN, and ZnO.

30 CFR 56.7013 - Covering or guarding drill holes.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Covering or guarding drill holes. 56.7013 Section 56.7013 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Rotary Jet Piercing Drilling § 56.7013 Covering or guarding drill holes. Drill holes large enough to...

30 CFR 57.7013 - Covering or guarding drill holes.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Covering or guarding drill holes. 57.7013 Section 57.7013 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... and Rotary Jet Piercing Drilling-Surface Only § 57.7013 Covering or guarding drill holes. Drill holes...

Plasmon sidebands in the gain spectrum of an electron-hole plasma

International Nuclear Information System (INIS)

Hoang Ngoc Cam; Nguyen Van Hieu; Nguyen Ai Viet.

1987-06-01

The theory is represented for the recombination of the electron-hole pair into the photon with and without the emission of the plasmon-phonon coupled modes. In calculating the energies of the plasmon and the plasmon-phonon coupled modes as well as the vertices of their effective interactions the quantum field theory method has been applied. The theoretical prediction agrees well with the experimental result in the main part EHP 0 and the first sideband EHP - of the gain spectrum. (author). 6 refs, 9 figs

BEC-BCS-laser crossover in Coulomb-correlated electron-hole-photon systems

International Nuclear Information System (INIS)

Yamaguchi, M; Kamide, K; Ogawa, T; Yamamoto, Y

2012-01-01

Many-body features caused by Coulomb correlations are of great importance for understanding phenomena pertaining to polariton systems in semiconductor microcavities, i.e. electron-hole-photon systems. Remarkable many-body effects are shown to exist in both thermal-equilibrium phases and non-equilibrium lasing states. We then show a unified framework for connecting the thermal-equilibrium and the non-equilibrium steady states based on a non-equilibrium Green's function approach. Bose-Einstein condensate (BEC)-Bardeen-Cooper-Schrieffer (BCS)-laser crossovers are investigated by using this approach. (paper)

Use of Electronic Resources in a Private University in Nigeria ...

African Journals Online (AJOL)

The study examined awareness and constraints in the use of electronic resources by lecturers and students of Ajayi Crowther University, Oyo, Nigeria. It aimed at justifying the resources expended in the provision of electronic resources in terms of awareness, patronage and factors that may be affecting awareness and use ...

Electronic Resources Management System: Recommendation Report 2017

KAUST Repository

Ramli, Rindra M.

2017-05-01

This recommendation report provides an overview of the selection process for the new Electronic Resources Management System. The library has decided to move away from Innovative Interfaces Millennium ERM module. The library reviewed 3 system as potential replacements namely: Proquest 360 Resource Manager, Ex Libris Alma and Open Source CORAL ERMS. After comparing and trialling the systems, it was decided to go for Proquest 360 Resource Manager.

Electron and Hole Transport Layers: Their Use in Inverted Bulk Heterojunction Polymer Solar Cells

Directory of Open Access Journals (Sweden)

Sandro Lattante

2014-03-01

Full Text Available Bulk heterojunction polymer solar cells (BHJ PSCs are very promising organic-based devices for low-cost solar energy conversion, compatible with roll-to-roll or general printing methods for mass production. Nevertheless, to date, many issues should still be addressed, one of these being the poor stability in ambient conditions. One elegant way to overcome such an issue is the so-called “inverted” BHJ PSC, a device geometry in which the charge collection is reverted in comparison with the standard geometry device, i.e., the electrons are collected by the bottom electrode and the holes by the top electrode (in contact with air. This reverted geometry allows one to use a high work function top metal electrode, like silver or gold (thus avoiding its fast oxidation and degradation, and eliminates the need of a polymeric hole transport layer, typically of an acidic nature, on top of the transparent metal oxide bottom electrode. Moreover, this geometry is fully compatible with standard roll-to-roll manufacturing in air and is less demanding for a good post-production encapsulation process. To date, the external power conversion efficiencies of the inverted devices are generally comparable to their standard analogues, once both the electron transport layer and the hole transport layer are fully optimized for the particular device. Here, the most recent results on this particular optimization process will be reviewed, and a general outlook regarding the inverted BHJ PSC will be depicted.

use of electronic resources by graduate students of the department

African Journals Online (AJOL)

respondent's access electronic resources from the internet via Cybercafé .There is a high ... KEY WORDS: Use, Electronic Resources, Graduate Students, Cybercafé. INTRODUCTION ... Faculty of Education, University of Uyo, Uyo. Olu Olat ...

Picosecond kinetics of the electron-hole layers formation in wide-bandgap II-VI type-II heterostructures

Energy Technology Data Exchange (ETDEWEB)

Filatov, E.V.; Zaitsev, S.V.; Tartakovskii, I.I.; Maksimov, A.A. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow region (Russian Federation); Yakovlev, D.R. [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Experimentelle Physik II, Technische Universitaet Dortmund (Germany); Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, 38106 Braunschweig (Germany)

2010-06-15

Considerable slowdown of luminescence kinetics of the direct optical transition was discovered in ZnSe/BeTe type-II heterostructures under high levels of optical pumping. The effect is attributed to forming of a potential barrier for holes in the ZnSe layer due to band bending at high densities of spatially separated carriers. That results in a longer time of the photoexcited holes energy relaxation to their ground state in the BeTe layer. The decrease of overlapping of electron and hole wavefunctions in the ZnSe layer in thick ZnSe/BeTe structures at high levels of optical excitation reveals an additional important effect, that leads to sufficient retardation of radiative recombination time for photoexcited carriers (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of model approximations for electron, hole, and photon transport in swift heavy ion tracks

Energy Technology Data Exchange (ETDEWEB)

Rymzhanov, R.A. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation); Medvedev, N.A., E-mail: nikita.medvedev@fzu.cz [Department of Radiation and Chemical Physics, Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8 (Czech Republic); Laser Plasma Department, Institute of Plasma Physics, Czech Academy of Sciences, Za Slovankou 3, 182 00 Prague 8 (Czech Republic); Volkov, A.E. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation); National Research Centre ‘Kurchatov Institute’, Kurchatov Sq. 1, 123182 Moscow (Russian Federation); Lebedev Physical Institute of the Russian Academy of Sciences, Leninskij pr., 53,119991 Moscow (Russian Federation); National University of Science and Technology MISiS, Leninskij pr., 4, 119049 Moscow (Russian Federation); National Research Nuclear University MEPhI, Kashirskoye sh., 31, 115409 Moscow (Russian Federation)

2016-12-01

The event-by-event Monte Carlo code, TREKIS, was recently developed to describe excitation of the electron subsystems of solids in the nanometric vicinity of a trajectory of a nonrelativistic swift heavy ion (SHI) decelerated in the electronic stopping regime. The complex dielectric function (CDF) formalism was applied in the used cross sections to account for collective response of a matter to excitation. Using this model we investigate effects of the basic assumptions on the modeled kinetics of the electronic subsystem which ultimately determine parameters of an excited material in an SHI track. In particular, (a) effects of different momentum dependencies of the CDF on scattering of projectiles on the electron subsystem are investigated. The ‘effective one-band’ approximation for target electrons produces good coincidence of the calculated electron mean free paths with those obtained in experiments in metals. (b) Effects of collective response of a lattice appeared to dominate in randomization of electron motion. We study how sensitive these effects are to the target temperature. We also compare results of applications of different model forms of (quasi-) elastic cross sections in simulations of the ion track kinetics, e.g. those calculated taking into account optical phonons in the CDF form vs. Mott’s atomic cross sections. (c) It is demonstrated that the kinetics of valence holes significantly affects redistribution of the excess electronic energy in the vicinity of an SHI trajectory as well as its conversion into lattice excitation in dielectrics and semiconductors. (d) It is also shown that induced transport of photons originated from radiative decay of core holes brings the excess energy faster and farther away from the track core, however, the amount of this energy is relatively small.

Electronic resource management practical perspectives in a new technical services model

CERN Document Server

Elguindi, Anne

2012-01-01

A significant shift is taking place in libraries, with the purchase of e-resources accounting for the bulk of materials spending. Electronic Resource Management makes the case that technical services workflows need to make a corresponding shift toward e-centric models and highlights the increasing variety of e-formats that are forcing new developments in the field.Six chapters cover key topics, including: technical services models, both past and emerging; staffing and workflow in electronic resource management; implementation and transformation of electronic resource management systems; the ro

Combined UMC- DFT prediction of electron-hole coupling in unit cells of pentacene crystals.

Science.gov (United States)

Leal, Luciano Almeida; de Souza Júnior, Rafael Timóteo; de Almeida Fonseca, Antonio Luciano; Ribeiro Junior, Luiz Antonio; Blawid, Stefan; da Silva Filho, Demetrio Antonio; da Cunha, Wiliam Ferreira

2017-05-01

Pentacene is an organic semiconductor that draws special attention from the scientific community due to the high mobility of its charge carriers. As electron-hole interactions are important aspects in the regard of such property, a computationally inexpensive method to predict the coupling between these quasi-particles is highly desired. In this work, we propose a hybrid methodology of combining Uncoupled Monte Carlo Simulations (UMC) and Density functional Theory (DFT) methodologies to obtain a good compromise between computational feasibility and accuracy. As a first step in considering a Pentacene crystal, we describe its unit cell: the Pentacene Dimer. Because many conformations can be encountered for the dimer and considering the complexity of the system, we make use of UMC in order to find the most probable structures and relative orientations for the Pentacene-Pentacene complex. Following, we carry out electronic structure calculations in the scope of DFT with the goal of describing the electron-hole coupling on the most probable configurations obtained by UMC. The comparison of our results with previously reported data on the literature suggests that the methodology is well suited for describing transfer integrals of organic semiconductors. The observed accuracy together with the smaller computational cost required by our approach allows us to conclude that such methodology might be an important tool towards the description of systems with higher complexity.

Utilization of electronic information resources by academic staff at ...

African Journals Online (AJOL)

The study investigated the utilization of Electronic Information resources by the academic staff of Makerere University in Uganda. It examined the academic staff awareness of the resources available, the types of resources provided by the Makerere University Library, the factors affecting resource utilization. The study was ...

Electron-hole transition in spherical QD-QW nanoparticles based on GaN∣(In,Ga)N∣GaN under hydrostatic pressure

International Nuclear Information System (INIS)

El Ghazi, Haddou; Jorio, Anouar

2013-01-01

Within the framework of effective-mass approximation and finite parabolic potential confinement barrier in which two confinement parameters are taking account, the electron (hole) energy and the ground-state electron-hole (e−h) transition in Core∣well∣shell (GaN|In x Ga 1−x N|GaN) spherical QD-QW nanoparticles are investigated as a function of the inner and the outer radii under externally applied hydrostatic pressure. The pressure dependencies of the effective-mass and the QD radius are taking into account. The results we obtained are in quite good agreement with the theoretical and the experimental findings

Electron-hole transition in spherical QD-QW nanoparticles based on GaN∣(In,Ga)N∣GaN under hydrostatic pressure

Energy Technology Data Exchange (ETDEWEB)

El Ghazi, Haddou, E-mail: hadghazi@gmail.com [LPS, Faculty of Science, Dhar EL Mehrez, BP 1796 Fes-Atlas (Morocco); Special Mathematics, CPGE Kénitra, Chakib Arsalane Street (Morocco); Jorio, Anouar [LPS, Faculty of Science, Dhar EL Mehrez, BP 1796 Fes-Atlas (Morocco)

2013-11-15

Within the framework of effective-mass approximation and finite parabolic potential confinement barrier in which two confinement parameters are taking account, the electron (hole) energy and the ground-state electron-hole (e−h) transition in Core∣well∣shell (GaN|In{sub x}Ga{sub 1−x}N|GaN) spherical QD-QW nanoparticles are investigated as a function of the inner and the outer radii under externally applied hydrostatic pressure. The pressure dependencies of the effective-mass and the QD radius are taking into account. The results we obtained are in quite good agreement with the theoretical and the experimental findings.

The effect of electron and hole doping on the thermoelectric properties of shandite-type Co3Sn2S2

OpenAIRE

Mangelis, Panagiotis; Vaqueiro, Paz; Jumas, Jean-Claude; da Silva, Ivan; Smith, Ronald I; Powell, Anthony V

2017-01-01

Electron and hole doping in Co3Sn2S2, through chemical substitution of cobalt by the neighbouring elements, nickel and iron, affects both the structure and thermoelectric properties. Electron doping to form Co3-xNixSn2S2 (0 ≤ x ≤ 3) results in an expansion of the kagome layer and materials become increasingly metallic as cobalt is substituted. Conversely, hole doping in Co3-xFexSn2S2 (0 ≤ x ≤ 0.6) leads to a transition from metallic to n-type semiconducting behaviour at x = 0.5. Iron substitu...

Phosphate Changes Effect of Humic Acids on TiO2 Photocatalysis: From Inhibition to Mitigation of Electron-Hole Recombination.

Science.gov (United States)

Long, Mingce; Brame, Jonathon; Qin, Fan; Bao, Jiming; Li, Qilin; Alvarez, Pedro J J

2017-01-03

A major challenge for photocatalytic water purification with TiO 2 is the strong inhibitory effect of natural organic matter (NOM), which can scavenge photogenerated holes and radicals and occlude ROS generation sites upon adsorption. This study shows that phosphate counteracts the inhibitory effect of humic acids (HA) by decreasing HA adsorption and mitigating electron-hole recombination. As a measure of the inhibitory effect of HA, the ratios of first-order reaction rate constants between photocatalytic phenol degradation in the absence versus presence of HA were calculated. This ratio was very high, up to 5.72 at 30 mg/L HA and pH 4.8 without phosphate, but was decreased to 0.76 (5 mg/L HA, pH 8.4) with 2 mM phosphate. The latter ratio indicates a surprising favorable effect of HA on TiO 2 photocatalysis. FTIR analyses suggest that this favorable effect is likely due to a change in the conformation of adsorbed HA, from a multiligand exchange arrangement to a complexation predominantly between COOH groups in HA and the TiO 2 surface in the presence of phosphate. This configuration can reduce hole consumption and facilitate electron transfer to O 2 by the adsorbed HA (indicated by linear sweep voltammetry), which mitigates electron-hole recombination and enhances contaminant degradation. A decrease in HA surface adsorption and hole scavenging (the predominant inhibitory mechanisms of HA) by phosphate (2 mM) was indicated by a 50% decrease in the photocatalytic degradation rate of HA and 80% decrease in the decay rate coefficient of interfacial-related photooxidation in photocurrent transients. These results, which were validated with other compounds (FFA and cimetidine), indicate that anchoring phosphate - or anions that exert similar effects on the TiO 2 surface - might be a feasible strategy to counteract the inhibitory effect of NOM during photocatalytic water treatment.

Electronic Resources Management Project Presentation 2012

KAUST Repository

Ramli, Rindra M.

2012-01-01

This presentation describes the electronic resources management project undertaken by the KAUST library. The objectives of this project is to migrate information from MS Sharepoint to Millennium ERM module. One of the advantages of this migration

Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO_2 using the induced and secondary current measurements

International Nuclear Information System (INIS)

Said, K.; Moya, G.; Si Ahmed, A.; Damamme, G.; Kallel, A.

2016-01-01

Graphical abstract: - Highlights: • Positive charging of high purity amorphous SiO_2 achieved by electron irradiation in a specially equipped scanning electron microscope. • Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents. • Study of isothermal detrapping for different temperatures (300–663 K). • Analysis of the hole detrapping via a first order kinetics. • Evaluation of the hole detrapping parameters (activation energy and frequency factor). - Abstract: Isothermal detrapping of holes after electron irradiation (using a SEM) in high purity amorphous SiO_2 is evaluated at different temperatures (in the range 300–663 K) by means of the induced and secondary current measurements. In order to single out the hole detrapping, the specific charging conditions (1 keV defocused electron beam of low density) leading to positive charging are adopted. The thermal detrapping, which stems from a single trap, begins at 523 K and is completed at 663 K. After annealing in air at 973 K during 48 h, two detrapping stages are revealed: the former is connected with an additional shallow trap, while the latter requires temperatures above 663 K for a complete detrapping. The first order kinetics describes reasonably well the detrapping process. The frequency factors (near 10"1"0 s"−"1) and the activation energies (about 1.6 eV) deduced from this analysis could be assigned, respectively, to the relaxation connected to detrapping and to the trap energy level of the charged oxygen vacancy.

Terahertz properties of Dirac electrons and holes in HgTe films with critical thickness

Energy Technology Data Exchange (ETDEWEB)

Dziom, Uladzislau; Shuvaev, Alexey; Pimenov, Andrei [Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna (Austria); Mikhailov, Nikolai; Kvon, Ze Don [Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

2016-07-01

We present and discuss properties of mercury telluride (HgTe) films with critical thickness in far-infrared (THz) spectral range. Density of charge carriers is controlled, using contact-free optical gating by visible light. Transmission measurements in applied magnetic field demonstrate switching from hole to electron-like behavior, as illumination time increases. The cyclotron mass of the electrons, extracted from the data, shows a square root dependence upon the charge concentration in a broad range of parameters. This can be interpreted as a clear proof of a linear dispersion relations, i.e. Dirac-type charge carriers.

Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

Energy Technology Data Exchange (ETDEWEB)

Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

2014-09-15

In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m{sup 2}, driving voltage was 4.4 V, and current density was 2.4 mA/cm{sup 2}. A white OLED component was then manufactured by doping red dopant [Os(bpftz){sub 2}(PPh{sub 2}Me){sub 2}] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE{sub x,y} of (0.31,0.35) at a luminance of 1000 cd/m{sup 2}, with a maximum luminance of 15,600 cd/m{sup 2} at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons.

Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

International Nuclear Information System (INIS)

Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

2014-01-01

In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m 2 , driving voltage was 4.4 V, and current density was 2.4 mA/cm 2 . A white OLED component was then manufactured by doping red dopant [Os(bpftz) 2 (PPh 2 Me) 2 ] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE x,y of (0.31,0.35) at a luminance of 1000 cd/m 2 , with a maximum luminance of 15,600 cd/m 2 at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons

Practical guide to electronic resources in the humanities

CERN Document Server

Dubnjakovic, Ana

2010-01-01

From full-text article databases to digitized collections of primary source materials, newly emerging electronic resources have radically impacted how research in the humanities is conducted and discovered. This book, covering high-quality, up-to-date electronic resources for the humanities, is an easy-to-use annotated guide for the librarian, student, and scholar alike. It covers online databases, indexes, archives, and many other critical tools in key humanities disciplines including philosophy, religion, languages and literature, and performing and visual arts. Succinct overviews of key eme

30 CFR 816.14 - Casing and sealing of drilled holes: Temporary.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 3 2010-07-01 2010-07-01 false Casing and sealing of drilled holes: Temporary. 816.14 Section 816.14 Mineral Resources OFFICE OF SURFACE MINING RECLAMATION AND ENFORCEMENT...-SURFACE MINING ACTIVITIES § 816.14 Casing and sealing of drilled holes: Temporary. Each exploration hole...

Utilisation of Electronic Information Resources By Lecturers in ...

African Journals Online (AJOL)

This study assesses the use of information resources, specifically, electronic databases by lecturers/teachers in Universities and Colleges of Education in South Western Nigeria. Information resources are central to teachers' education. It provides lecturers/teachers access to information that enhances research and ...

Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

KAUST Repository

Janjua, Bilal; Ng, Tien Khee; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2014-01-01

A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

KAUST Repository

Janjua, Bilal

2014-02-27

A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

Discipline, availability of electronic resources and the use of Finnish National Electronic Library - FinELib

Directory of Open Access Journals (Sweden)

Sanna Torma

2004-01-01

Full Text Available This study elaborated relations between digital library use by university faculty, users' discipline and the availability of key resources in the Finnish National Electronic Library (FinELib, Finnish national digital library, by using nationwide representative survey data. The results show that the perceived availability of key electronic resources by researchers in FinELib was a stronger predictor of the frequency and purpose of use of its services than users' discipline. Regardless of discipline a good perceived provision of central resources led to a more frequent use of FinELib. The satisfaction with the services did not vary with the discipline, but with the perceived availability of resources.

30 CFR 75.1403-9 - Criteria-Shelter holes.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Criteria-Shelter holes. 75.1403-9 Section 75... Criteria—Shelter holes. (a) Shelter holes should be provided on track haulage roads at intervals of not... holes should be readily accessible and should be at least 5 feet in depth, not more than 4 feet in width...

The Role of the Acquisitions Librarian in Electronic Resources Management

Science.gov (United States)

Pomerantz, Sarah B.

2010-01-01

With the ongoing shift to electronic formats for library resources, acquisitions librarians, like the rest of the profession, must adapt to the rapidly changing landscape of electronic resources by keeping up with trends and mastering new skills related to digital publishing, technology, and licensing. The author sought to know what roles…

Analysis of Pedagogic Potential of Electronic Educational Resources with Elements of Autodidactics

Directory of Open Access Journals (Sweden)

Igor A.

2018-03-01

Full Text Available Introduction: in recent years didactic properties of electronic educational resources undergo considerable changes, nevertheless, the question of studying of such complete phenomenon as “an electronic educational resource with autodidactics elements” remains open, despite sufficient scientific base of researches of the terms making this concept. Article purpose – determination of essence of electronic educational resources with autodidactics elements. Materials and Methods: the main method of research was the theoretical analysis of the pedagogical and psychological literature on the problem under study. We used the theoretical (analysis, synthesis, comparison and generalization methods, the method of interpretation, pedagogical modeling, and empirical methods (observation, testing, conversation, interview, analysis of students’ performance, pedagogical experiment, peer review. Results: we detected the advantages of electronic educational resources in comparison with traditional ones. The concept of autodidactics as applied to the subject of research is considered. Properties of electronic educational resources with a linear and nonlinear principle of construction are studied.The influence of the principle of construction on the development of the learners’ qualities is shown. We formulated an integral definition of electronic educational resources with elements of autodidactics, namely, the variability, adaptivity and cyclicity of training. A model of the teaching-learning process with electronic educational resources is developed. Discussion and Conclusions: further development of a problem will allow to define whether electronic educational resources with autodidactics elements pedagogical potential for realization of educational and self-educational activity of teachers have, to modify technological procedures taking into account age features of students, their specialties and features of the organization of process of training of

Preservation and conservation of electronic information resources of ...

African Journals Online (AJOL)

The major holdings of the broadcast libraries of the Nigerian Television Authority (NTA) are electronic information resources; therefore, providing safe places for general management of these resources have aroused interest in the industry in Nigeria for sometimes. The need to study the preservation and conservation of ...

Energy relaxation and separation of a hot electron-hole pair in organic aggregates from a time-dependent wavepacket diffusion method

International Nuclear Information System (INIS)

Han, Lu; Liang, WanZhen; Zhao, Yi; Zhong, Xinxin

2014-01-01

The time-dependent wavepacket diffusive method [X. Zhong and Y. Zhao, J. Chem. Phys. 138, 014111 (2013)] is extended to investigate the energy relaxation and separation of a hot electron-hole pair in organic aggregates with incorporation of Coulomb interaction and electron-phonon coupling. The pair initial condition generated by laser pulse is represented by a Gaussian wavepacket with a central momentum. The results reveal that the hot electron energy relaxation is very well described by two rate processes with the fast rate much larger than the slow one, consistent with experimental observations, and an efficient electron-hole separation is accomplished accompanying the fast energy relaxation. Furthermore, although the extra energy indeed helps the separation by overcoming the Coulomb interaction, the width of initial wavepacket is much sensitive to the separation efficiency and the narrower wavepacket generates the more separated charges. This behavior may be useful to understand the experimental controversy of the hot carrier effect on charge separation

Hot phonon generation by split-off hole band electrons in AlxGa1-xAs alloys investigated by picosecond Raman scattering

International Nuclear Information System (INIS)

Jacob, J.M.; Kim, D.S.; Zhou, J.F.; Song, J.J.

1992-01-01

The initial generation of hot LO phonons by the relaxation of hot carriers in GaAs and Al x Ga 1-x As alloy semiconductors is studied. Within the initial 2ps of photoexcitation, only those electrons originating from the split-off hole bands are found to generate a significant number of I-valley hot phonons when photon energies of 2.33eV are used. A picosecond Raman scattering technique is used to determine the hot phonon occupation number in a series of MBE grown Al x Ga 1-x As samples with 0≤x≤0.39. The Stokes and anti-Stokes lines were measured for both GaAs-like and AlAs-like LO phonon modes to determine their occupation numbers. The authors observe a rapid decrease in the phonon occupation numbers as the aluminum concentration increases beyond x = 0.2. This rapid decrease is explained by considering only those electrons photoexcited from the split-off hole band. Almost all of the electrons originating from the heavy and light-hole bands are shown to quickly transfer and remain in the X and L valleys without generating significant numbers of hot LO phonons during the initial 2ps and at a carrier density of 10 17 cm -3 . A model based upon the instantaneous thermalization of hot electrons photoexcited from the split-off hole bands is used to fit the data. They have obtained very good agreement between experiment and theory. This work provides a clear understanding to the relaxation of Γ valley hot electrons by the generation of hot phonons on subpicosecond and picosecond time scales, which has long standing implications to previous time resolved Raman experiments

Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO{sub 2} using the induced and secondary current measurements

Energy Technology Data Exchange (ETDEWEB)

Said, K., E-mail: kamel.said@fss.rnu.tn [LaMaCoP, Université de Sfax, BP 1171, 3000 Sfax (Tunisia); Moya, G.; Si Ahmed, A. [Im2np, UMR 7334 CNRS, Aix-Marseille Université, 13397 Marseille Cedex 20 (France); Damamme, G. [CEA, DAM, GRAMAT, 46500 Gramat (France); Kallel, A. [LaMaCoP, Université de Sfax, BP 1171, 3000 Sfax (Tunisia)

2016-01-15

Graphical abstract: - Highlights: • Positive charging of high purity amorphous SiO{sub 2} achieved by electron irradiation in a specially equipped scanning electron microscope. • Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents. • Study of isothermal detrapping for different temperatures (300–663 K). • Analysis of the hole detrapping via a first order kinetics. • Evaluation of the hole detrapping parameters (activation energy and frequency factor). - Abstract: Isothermal detrapping of holes after electron irradiation (using a SEM) in high purity amorphous SiO{sub 2} is evaluated at different temperatures (in the range 300–663 K) by means of the induced and secondary current measurements. In order to single out the hole detrapping, the specific charging conditions (1 keV defocused electron beam of low density) leading to positive charging are adopted. The thermal detrapping, which stems from a single trap, begins at 523 K and is completed at 663 K. After annealing in air at 973 K during 48 h, two detrapping stages are revealed: the former is connected with an additional shallow trap, while the latter requires temperatures above 663 K for a complete detrapping. The first order kinetics describes reasonably well the detrapping process. The frequency factors (near 10{sup 10} s{sup −1}) and the activation energies (about 1.6 eV) deduced from this analysis could be assigned, respectively, to the relaxation connected to detrapping and to the trap energy level of the charged oxygen vacancy.

Building an electronic resource collection a practical guide

CERN Document Server

Lee, Stuart D

2004-01-01

This practical book guides information professionals step-by-step through building and managing an electronic resource collection. It outlines the range of electronic products currently available in abstracting and indexing, bibliographic, and other services and then describes how to effectively select, evaluate and purchase them.

Analysis of Human Resources Management Strategy in China Electronic Commerce Enterprises

Science.gov (United States)

Shao, Fang

The paper discussed electronic-commerce's influence on enterprise human resources management, proposed and proved the human resources management strategy which electronic commerce enterprise should adopt from recruitment strategy to training strategy, keeping talent strategy and other ways.

Using XML Technologies to Organize Electronic Reference Resources

OpenAIRE

Huser, Vojtech; Del Fiol, Guilherme; Rocha, Roberto A.

2005-01-01

Provision of access to reference electronic resources to clinicians is becoming increasingly important. We have created a framework for librarians to manage access to these resources at an enterprise level, rather than at the individual hospital libraries. We describe initial project requirements, implementation details, and some preliminary results.

Electron-positron pair production in a hot accretion plasma around a massive black hole

International Nuclear Information System (INIS)

Takahara, Fumio; Kusunose, Masaaki.

1985-01-01

We investigate the electron-positron pair production in a hot accretion plasma around a supermassive black hole in connection with active galactic nuclei. Assuming that an optically thin two-temperature plasma is produced in the vicinity of the central black hole, we examine the condition for the significant pair production by comparing relevant time scales. Since the pair production is dominated by collisions between hard photons, the conditions for significant pair production depend on the production rate of hard photons. We examine the case where the unsaturated Comptonization of soft photons produces hard photons as well as that of bremsstrahlung. We show that significant pair production occurs for a moderately high accretion rate with relatively slow accretion flow as compared to the free fall velocity in both cases. Possible consequences of pair production are briefly discussed. (author)

Electronic Resources and Mission Creep: Reorganizing the Library for the Twenty-First Century

Science.gov (United States)

Stachokas, George

2009-01-01

The position of electronic resources librarian was created to serve as a specialist in the negotiation of license agreements for electronic resources, but mission creep has added more functions to the routine work of electronic resources such as cataloging, gathering information for collection development, and technical support. As electronic…

Momentum distributions for two-electron systems: electron correlation and the Coulomb hole

International Nuclear Information System (INIS)

Banyard, K.E.; Reed, C.E.

1978-01-01

By evaluating the distribution function f(p 12 ), where p 12 ) in momentum space can be investigated. difference[p 1 - p 2 ] the concept of a Coulomb hole Δf(p 12 ) in momentum space can be investigated. Results are presented for the isoelectronic systems H - , He and Li + . The electron correlation within each CI wavefunction was analysed into its radial and angular components so that the structure and composition of Δf(p 12 ) could be assessed. The two-particle momentum radial density distribution and several two-particle expectation quantities are also examined. The present findings indicate, that in momentum space, the radial components of correlation produce effects characteristic of total correlation in position space whereas, by contrast, angular correlation creates an opposite effect. Thus the shape and formation of Δf(p 12 ) proves to be considerably more complex than that found for its counterpart in position space. The results also reveal a noticeable change in the relative importance of the components of correlation as the momentum increases. (author)

Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-T{sub c} superconductors

Energy Technology Data Exchange (ETDEWEB)

Moritz, B; Johnston, S; Greven, M; Shen, Z-X; Devereaux, T P [Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory and Stanford University, Stanford, CA 94305 (United States); Schmitt, F; Meevasana, W; Motoyama, E M [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305 (United States); Lu, D H [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Kim, C [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Scalettar, R T [Physics Department, University of California-Davis, Davis, CA 95616 (United States)], E-mail: moritzb@slac.stanford.edu

2009-09-15

Recently, angle-resolved photoemission spectroscopy (ARPES) has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). This paper demonstrates, using a combination of new ARPES measurements and quantum Monte Carlo simulations, that the HEA is not simply the by-product of matrix element effects, but rather represents a cross-over from a quasi-particle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character, in both hole- and electron-doped cuprates. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. the 'waterfall'-like behavior, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying both hole and electron doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram.

Two-particle self-consistent analysis for the electron-hole asymmetry of superconductivity in cuprate superconductors

Energy Technology Data Exchange (ETDEWEB)

Ogura, Daisuke; Kuroki, Kazuhiko [Department of Physics, Graduate School of Science, Osaka University, Toyonaka (Japan)

2017-06-15

In the hole-doped type cuprate superconductors, it is well-known that the superconducting transition temperature T{sub c} exhibits a dome-like structure against doping. On the other hand, recent experiments unveil that T{sub c} in the electron-doped compounds shows a monotonic increase with decreasing the doping, at least down to a very small doping rate. Our recent study for the three-band d-p model has unveiled that this asymmetric behavior can be explained as a combined effect of the intrinsic electron-hole asymmetry in systems comprising Cu3 d and O2 p orbitals and the band-filling-dependent vertex correction. In the present study, we study another compound Tl{sub 2} Ba{sub 2} CuO{sub 6} to show that this explanation can be applied to other cuprate superconductors with the small d{sub z{sup 2}} orbital mixture. By varying the d-p offset, we also study how the strength of the d-p hybridization controls the spin fluctuation and hence the pairing interaction. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electronic Resources Management System: Recommendation Report 2017

KAUST Repository

Ramli, Rindra M.

2017-01-01

This recommendation report provides an overview of the selection process for the new Electronic Resources Management System. The library has decided to move away from Innovative Interfaces Millennium ERM module. The library reviewed 3 system

Electron Number-Based Phase Diagram of Pr1 -xLaCex CuO4 -δ and Possible Absence of Disparity between Electron- and Hole-Doped Cuprate Phase Diagrams

Science.gov (United States)

Song, Dongjoon; Han, Garam; Kyung, Wonshik; Seo, Jeongjin; Cho, Soohyun; Kim, Beom Seo; Arita, Masashi; Shimada, Kenya; Namatame, Hirofumi; Taniguchi, Masaki; Yoshida, Y.; Eisaki, H.; Park, Seung Ryong; Kim, C.

2017-03-01

We performed annealing and angle resolved photoemission spectroscopy studies on electron-doped cuprate Pr1 -xLaCex CuO4 -δ (PLCCO). It is found that the optimal annealing condition is dependent on the Ce content x . The electron number (n ) is estimated from the experimentally obtained Fermi surface volume for x =0.10 , 0.15 and 0.18 samples. It clearly shows a significant and annealing dependent deviation from the nominal x . In addition, we observe that the pseudo-gap at hot spots is also closely correlated with n ; the pseudogap gradually closes as n increases. We established a new phase diagram of PLCCO as a function of n . Different from the x -based one, the new phase diagram shows similar antiferromagnetic and superconducting phases to those of hole doped ones. Our results raise a possibility for absence of disparity between the phase diagrams of electron- and hole-doped cuprates

Negligible Electronic Interaction between Photoexcited Electron-Hole Pairs and Free Electrons in Phosphorus-Boron Co-Doped Silicon Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Limpens, Rens [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Neale, Nathan R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fujii, Minoru [Kobe University; Gregorkiewicz, Tom [University of Amsterdam

2018-03-05

Phosphorus (P) and boron (B) co-doped Si nanocrystals (NCs) have raised interest in the optoelectronic industry due to their electronic tunability, optimal carrier multiplication properties, and straightforward dispersibility in polar solvents. Yet a basic understanding of the interaction of photoexcited electron-hole (e-h) pairs with new physical features that are introduced by the co-doping process (free carriers, defect states, and surface chemistry) is missing. Here, we present the first study of the ultrafast carrier dynamics in SiO2-embedded P-B co-doped Si NC ensembles using induced absorption spectroscopy through a two-step approach. First, the induced absorption data show that the large fraction of the dopants residing on the NC surface slows down carrier relaxation dynamics within the first 20 ps relative to intrinsic (undoped) Si NCs, which we interpret as enhanced surface passivation. On longer time-scales (picosecond to nanosecond regime), we observe a speeding up of the carrier relaxation dynamics and ascribe it to doping-induced trap states. This argument is deduced from the second part of the study, where we investigate multiexciton interactions. From a stochastic modeling approach we show that localized carriers, which are introduced by the P or B dopants, have minor electronic interactions with the photoexcited e-h pairs. This is understood in light of the strong localization of the introduced carriers on their original P- or B-dopant atoms, due to the strong quantum confinement regime in these relatively small NCs (<6 nm).

The Internet School of Medicine: use of electronic resources by medical trainees and the reliability of those resources.

Science.gov (United States)

Egle, Jonathan P; Smeenge, David M; Kassem, Kamal M; Mittal, Vijay K

2015-01-01

Electronic sources of medical information are plentiful, and numerous studies have demonstrated the use of the Internet by patients and the variable reliability of these sources. Studies have investigated neither the use of web-based resources by residents, nor the reliability of the information available on these websites. A web-based survey was distributed to surgical residents in Michigan and third- and fourth-year medical students at an American allopathic and osteopathic medical school and a Caribbean allopathic school regarding their preferred sources of medical information in various situations. A set of 254 queries simulating those faced by medical trainees on rounds, on a written examination, or during patient care was developed. The top 5 electronic resources cited by the trainees were evaluated for their ability to answer these questions accurately, using standard textbooks as the point of reference. The respondents reported a wide variety of overall preferred resources. Most of the 73 responding medical trainees favored textbooks or board review books for prolonged studying, but electronic resources are frequently used for quick studying, clinical decision-making questions, and medication queries. The most commonly used electronic resources were UpToDate, Google, Medscape, Wikipedia, and Epocrates. UpToDate and Epocrates had the highest percentage of correct answers (47%) and Wikipedia had the lowest (26%). Epocrates also had the highest percentage of wrong answers (30%), whereas Google had the lowest percentage (18%). All resources had a significant number of questions that they were unable to answer. Though hardcopy books have not been completely replaced by electronic resources, more than half of medical students and nearly half of residents prefer web-based sources of information. For quick questions and studying, both groups prefer Internet sources. However, the most commonly used electronic resources fail to answer clinical queries more than half

Variation of sigma-hole magnitude with M valence electron population in MX(n)Y(4-n) molecules (n = 1-4; M = C, Si, Ge; X, Y = F, Cl, Br).

Science.gov (United States)

McDowell, Sean A C; Joseph, Jerelle A

2014-01-14

Sigma holes are described as electron-deficient regions on atoms, particularly along the extension of covalent bonds, due to non-uniform electron density distribution on the surface of these atoms. A computational study of MX(n)Y(4-n) molecules (n = 1-4; M = C, Si, Ge; X, Y = F, Cl, Br) was undertaken and it is shown that the relative sigma hole potentials on M due to X-M and Y-M can be adequately explained in terms of the variation in the valence electron population of the central M atom. A model is proposed for the depletion of the M valence electron population which explains the trends in sigma hole strengths, especially those that cannot be accounted for solely on the basis of relative electronegativities.

Observation of suppressed Auger mechanism in type-I quantum well structures with delocalized electron-hole wavefunctions

Energy Technology Data Exchange (ETDEWEB)

Hassani Nia, Iman; Fathipour, Vala; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

2015-08-15

We report the first observation of non-threshold Auger mechanism for a quantum well structure with Type-I band alignment. Excitation-dependent photoluminescence measurements were used to extract the Auger recombination coefficients from 77 K up to room temperature. The results verify the role of interface mediated momentum exchange as well as suppression of Auger recombination for delocalized electron-hole wavefunctions.

ANALYTICAL REVIEW OF ELECTRONIC RESOURCES FOR THE STUDY OF LATIN

Directory of Open Access Journals (Sweden)

Olena Yu. Balalaieva

2014-04-01

Full Text Available The article investigates the current state of development of e-learning content in the Latin language. It is noted that the introduction of ICT in the educational space has expanded the possibility of studying Latin, opened access to digital libraries resources, made it possible to use scientific and educational potential and teaching Latin best practices of world's leading universities. A review of foreign and Ukrainian information resources and electronic editions for the study of Latin is given. Much attention was paid to the didactic potential of local and online multimedia courses of Latin, electronic textbooks, workbooks of interactive tests and exercises, various dictionaries and software translators, databases and digital libraries. Based on analysis of the world market of educational services and products the main trends in the development of information resources and electronic books are examined. It was found that multimedia courses with interactive exercises or workbooks with interactive tests, online dictionaries and translators are the most widely represented and demanded. The noticeable lagging of Ukrainian education and computer linguistics in quantitative and qualitative measures in this industry is established. The obvious drawback of existing Ukrainian resources and electronic editions for the study of Latin is their noninteractive nature. The prospects of e-learning content in Latin in Ukraine are outlined.

Excitonic and electron-hole mechanisms of the creation of Frenkel defect in alkali halides

International Nuclear Information System (INIS)

Lushchik, A.; Kirm, M.; Lushchik, Ch.; Vasil'chenko, E.

2000-01-01

Excitonic and electron-hole (e-h) mechanisms of stable F centre creation by VUV radiation in alkali halide crystals are discussed. In KCl at 4.2 K, the efficiency of stable F-H pair creation is especially high at the direct optical formation of triplet excitons with n=1. At 200-400 K, the creation processes of stable F centres in KCl are especially efficient at the formation of one-halide exciton in the Urbach tail of an exciton absorption. In KCl and KBr, the decay of a cation exciton (∼20 eV) causes the formation of two e-h pairs, while in NaCl a cation exciton (33.5 eV) decays into two e-h and an anion exciton. An elastic uniaxial stress of a crystal excited by VUV radiation decreases the mean free path of excitons before their self-trapping (KI) and increases the mean free path of hot holes before self-trapping (NaCl)

The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of p+-p-n-n+ Wz-GaN Reach-Through Avalanche Photodiodes

Directory of Open Access Journals (Sweden)

Moumita Ghosh

2013-01-01

Full Text Available The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of p+-p-n-n+ structured Wurtzite-GaN (Wz-GaN reach-through avalanche photodiodes (RAPDs. The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM and Flip Chip (FC are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and 9.4144×103, respectively, due to hole dominated photocurrent (i.e., in FC structure; while those are 480.56 mA W−1 and 7.8800×103, respectively, due to electron dominated photocurrent (i.e., in TM structure at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the n+-layer instead of p+-layer of the device.

Elektronik Bilgi Kaynaklarının Seçimi / Selection of Electronic Information Resources

Directory of Open Access Journals (Sweden)

Pınar Al

2003-04-01

Full Text Available For many years, library users have used only from the printed media in order to get the information that they have needed. Today with the widespread use of the Web and the addition of electronic information resources to library collections, the use of information in the electronic environment as well as in printed media is started to be used. In time, such types of information resources as, electronic journals, electronic books, electronic encyclopedias, electronic dictionaries and electronic theses have been added to library collections. In this study, selection criteria that can be used for electronic information resources are discussed and suggestions are provided for libraries that try to select electronic information resources for their collections.

The Influence of Atoms-in Molecules Methods on Shared Electron Distribution Indices and Domain Averaged Fermi Holes

Czech Academy of Sciences Publication Activity Database

Bultinck, P.; Cooper, D.L.; Ponec, Robert

2010-01-01

Roč. 114, č. 33 (2010), s. 8754-8763 ISSN 1089-5639 R&D Projects: GA ČR GA203/09/0118 Institutional research plan: CEZ:AV0Z40720504 Keywords : shared electron distribution index * domain averaged fermi holes * atoms in molecules Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.732, year: 2010

Access to electronic resources by visually impaired people

Directory of Open Access Journals (Sweden)

Jenny Craven

2003-01-01

Full Text Available Research into access to electronic resources by visually impaired people undertaken by the Centre for Research in Library and Information Management has not only explored the accessibility of websites and levels of awareness in providing websites that adhere to design for all principles, but has sought to enhance understanding of information seeking behaviour of blind and visually impaired people when using digital resources.

Library training to promote electronic resource usage

DEFF Research Database (Denmark)

Frandsen, Tove Faber; Tibyampansha, Dativa; Ibrahim, Glory

2017-01-01

Purpose: Increasing the usage of electronic resources is an issue of concern for many libraries all over the world. Several studies stress the importance of information literacy and instruction in order to increase the usage. Design/methodology/approach: The present article presents the results...

Why and How to Measure the Use of Electronic Resources

Directory of Open Access Journals (Sweden)

Jean Bernon

2008-11-01

Full Text Available A complete overview of library activity implies a complete and reliable measurement of the use of both electronic resources and printed materials. This measurement is based on three sets of definitions: document types, use types and user types. There is a common model of definitions for printed materials, but a lot of questions and technical issues remain for electronic resources. In 2006 a French national working group studied these questions. It relied on the COUNTER standard, but found it insufficient and pointed out the need for local tools such as web markers and deep analysis of proxy logs. Within the French national consortium COUPERIN, a new working group is testing ERMS, SUSHI standards, Shibboleth authentication, along with COUNTER standards, to improve the counting of the electronic resources use. At this stage this counting is insufficient and its improvement will be a European challenge for the future.

30 CFR 77.1502 - Auger holes; restriction against entering.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Auger holes; restriction against entering. 77... UNDERGROUND COAL MINES Auger Mining § 77.1502 Auger holes; restriction against entering. No person shall be permitted to enter an auger hole except with the approval of the MSHA Coal Mine Safety and Health District...

Efficient and colour-stable hybrid white organic light-emitting diodes utilizing electron-hole balanced spacers

International Nuclear Information System (INIS)

Leem, Dong-Seok; Kim, Ji Whan; Kim, Jang-Joo; Jung, Sung Ouk; Kim, Seul-Ong; Kwon, Soon-Ki; Kim, Se Hoon; Kim, Kee Young; Kim, Yun-Hi

2010-01-01

High-efficiency two-colour white organic light-emitting diodes (WOLEDs) comprising a newly synthesized iridium complex orange phosphor ((impy) 2 Ir(acac)) and a blue fluorophor (BD012) have been realized by placing several kinds of thin spacers between two emitters. Hybrid WOLEDs with a spacer composed of a hole-transporting N,N-dicarbazolyl-3,5-benzene (mCP) and an electron-transporting 4,7-diphenyl-1,10-phenanthroline (Bphen) exhibit a high external quantum efficiency (EQE) of up to 8.4% and a negligible colour change (the colour coordinate of (0.39, 0.41) at 1000 cd m -2 ) with increasing brightness, whereas the device using a hole-transporting mCP spacer shows a relatively low EQE of 6.2% and a large shift of emitting colour with increasing brightness. Device performance is further characterized based on the charge transport behaviour of the spacers inserted between the two emitters.

30 CFR 816.15 - Casing and sealing of drilled holes: Permanent.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 3 2010-07-01 2010-07-01 false Casing and sealing of drilled holes: Permanent...-SURFACE MINING ACTIVITIES § 816.15 Casing and sealing of drilled holes: Permanent. When no longer needed... exploration hole, other drilled hole or borehole, well, and other exposed underground opening shall be capped...

Euler European Libraries and Electronic Resources in Mathematical Sciences

CERN Document Server

The Euler Project. Karlsruhe

The European Libraries and Electronic Resources (EULER) Project in Mathematical Sciences provides the EulerService site for searching out "mathematical resources such as books, pre-prints, web-pages, abstracts, proceedings, serials, technical reports preprints) and NetLab (for Internet resources), this outstanding engine is capable of simple, full, and refined searches. It also offers a browse option, which responds to entries in the author, keyword, and title fields. Further information about the Project is provided at the EULER homepage.

Tricritical behaviour in the phase transition induced by electron-hole pairing

International Nuclear Information System (INIS)

Crisan, M.

1980-01-01

The electron-hole pairing, which is possible in metals or semiconductors, can give condensed phases with two order parameters. If the coupling between the two order parameters is considered, the free energy functional is similar with the free energy of a n-component spin system with cubic anisotropy. Using the Wagner hypothesis (tricritical scaling) the non-linear scaling fields have been calculated. In order to perform the calculation of the nonlinear fields we used the method given by Rudnick and Nelson to solve the recursion relations for the 4-epsilon-dimensional system with n=6 components. The present calculation in the frame-work of the renormalization-group approach confirms the result obtained in the mean-field theory that the coupling of the two order parameters induces a first order phase transition. (author)

Effective photon mass from black-hole formation

Directory of Open Access Journals (Sweden)

Slava Emelyanov

2017-06-01

Full Text Available We compute the value of effective photon mass mγ at one-loop level in QED in the background of small (1010 g≲M≪1016 g spherically symmetric black hole in asymptotically flat spacetime. This effect is associated with the modification of electron/positron propagator in presence of event horizon. Physical manifestations of black-hole environment are compared with those of hot neutral plasma. We estimate the distance to the nearest black hole from the upper bound on mγ obtained in the Coulomb-law test. We also find that corrections to electron mass me and fine structure constant α at one-loop level in QED are negligible in the weak gravity regime.

Bernstein-Greene-Kruskal theory of electron holes in superthermal space plasma

Science.gov (United States)

Aravindakshan, Harikrishnan; Kakad, Amar; Kakad, Bharati

2018-05-01

Several spacecraft missions have observed electron holes (EHs) in Earth's and other planetary magnetospheres. These EHs are modeled with the stationary solutions of Vlasov-Poisson equations, obtained by adopting the Bernstein-Greene-Kruskal (BGK) approach. Through the literature survey, we find that the BGK EHs are modelled by using either thermal distribution function or any statistical distribution derived from particular spacecraft observations. However, Maxwell distributions are quite rare in space plasmas; instead, most of these plasmas are superthermal in nature and generally described by kappa distribution. We have developed a one-dimensional BGK model of EHs for space plasma that follows superthermal kappa distribution. The analytical solution of trapped electron distribution function for such plasmas is derived. The trapped particle distribution function in plasma following kappa distribution is found to be steeper and denser as compared to that for Maxwellian distribution. The width-amplitude relation of perturbation for superthermal plasma is derived and allowed regions of stable BGK solutions are obtained. We find that the stable BGK solutions are better supported by superthermal plasmas compared to that of thermal plasmas for small amplitude perturbations.

Effects of Electronic Information Resources Skills Training for Lecturers on Pedagogical Practices and Research Productivity

Science.gov (United States)

Bhukuvhani, Crispen; Chiparausha, Blessing; Zuvalinyenga, Dorcas

2012-01-01

Lecturers use various electronic resources at different frequencies. The university library's information literacy skills workshops and seminars are the main sources of knowledge of accessing electronic resources. The use of electronic resources can be said to have positively affected lecturers' pedagogical practices and their work in general. The…

The role of electron heating physics in images and variability of the Galactic Centre black hole Sagittarius A*

Science.gov (United States)

Chael, Andrew; Rowan, Michael; Narayan, Ramesh; Johnson, Michael; Sironi, Lorenzo

2018-05-01

The accretion flow around the Galactic Centre black hole Sagittarius A* (Sgr A*) is expected to have an electron temperature that is distinct from the ion temperature, due to weak Coulomb coupling in the low-density plasma. We present four two-temperature general relativistic radiative magnetohydrodynamic (GRRMHD) simulations of Sgr A* performed with the code KORAL. These simulations use different electron heating prescriptions, motivated by different models of the underlying plasma microphysics. We compare the Landau-damped turbulent cascade model used in previous work with a new prescription we introduce based on the results of particle-in-cell simulations of magnetic reconnection. With the turbulent heating model, electrons are preferentially heated in the polar outflow, whereas with the reconnection model electrons are heated by nearly the same fraction everywhere in the accretion flow. The spectra of the two models are similar around the submillimetre synchrotron peak, but the models heated by magnetic reconnection produce variability more consistent with the level observed from Sgr A*. All models produce 230 GHz images with distinct black hole shadows which are consistent with the image size measured by the Event Horizon Telescope, but only the turbulent heating produces an anisotropic `disc-jet' structure where the image is dominated by a polar outflow or jet at frequencies below the synchrotron peak. None of our models can reproduce the observed radio spectral slope, the large near-infrared and X-ray flares, or the near-infrared spectral index, all of which suggest non-thermal electrons are needed to fully explain the emission from Sgr A*.

High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

DEFF Research Database (Denmark)

Chen, Zhuoying; Lee, Mi Jung; Ashraf, Raja Shahid

2012-01-01

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance...

Electronic structure and molecular orbital study of hole-transport material triphenylamine derivatives

International Nuclear Information System (INIS)

Wang, B.-C.; Liao, H.-R.; Chang, J.-C.; Chen Likey; Yeh, J.-T.

2007-01-01

Recently, triphenylamine (TPA), 4,4'-bis(phenyl-m-tolylamino)biphenyl (TPD), 4,4'-bis(1-naphthylphenylamino)biphenyl (NPB) and their derivatives are widely used in the organic light-emitting diode (OLED) devices as a hole-transporting material (HTM) layer. We have optimized twenty different structures of HTM materials by using density functional theory (DFT), B3LYP/6-31G method. All these different structures contain mono-amine and diamine TPA derivatives. The energies of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) along with molecular orbitals for these HTMs are also determined. We have found that the central amine nitrogen atom and the phenyl ring, which is next to the central amine nitrogen atom, show significant contribution to the HOMO and LUMO, respectively. The sum of the calculated bond angles (α+β+γ) of the central amine nitrogen atom has been applied to describe the bonding and the energy difference for HOMO and LUMO in these TPA derivatives. Electronic structure calculations have been performed for these TPA derivatives. Again, the LCAO-MO patterns of HOMO and LUMO levels of these derivatives are used to investigate their electron density. A series of electron-transporting steps are predicted for these compounds employing these calculated results

The effect of particle-hole interaction on the XPS core-hole spectrum

International Nuclear Information System (INIS)

Ohno, Masahide; Sjoegren, Lennart

2004-01-01

How the effective particle-hole interaction energy, U, or the polarization effect on a secondary electron in a final two-hole one-particle (2h1p) state created by the Coster-Kronig (CK) transition can solely affect the density of the CK particle states and consequently the core-hole spectral function, is discussed. The X-ray photoelectron spectroscopy (XPS) core-hole spectrum is predominantly governed by the unperturbed initial core-hole energy relative to the zero-point energy. At the latter energy, the real part of the initial core-hole self-energy becomes zero (no relaxation energy shift) and the imaginary part (the lifetime broadening) approximately maximizes. The zero-point energy relative to the double-ionization threshold energy is governed by the ratio of U relative to the bandwidth of the CK continuum. As an example, we study the 5p XPS spectra of atomic Ra (Z=88), Th (Z=90) and U (Z=92). The spectra are interpreted in terms of the change in the unperturbed initial core-hole energy relative to the zero-point energy. We explain why in general an ab initio atomic many-body calculation can provide an overall good description of solid-state spectra predominantly governed by the atomic-like localized core-hole dynamics. We explain this in terms of the change from free atom to metal in both U and the zero-point energy (self-energy)

Efficient and colour-stable hybrid white organic light-emitting diodes utilizing electron-hole balanced spacers

Energy Technology Data Exchange (ETDEWEB)

Leem, Dong-Seok; Kim, Ji Whan; Kim, Jang-Joo [Department of Materials Science and Engineering, and OLED Center, Seoul National University, Seoul 151-744 (Korea, Republic of); Jung, Sung Ouk; Kim, Seul-Ong; Kwon, Soon-Ki [School of Materials Science and Engineering, and Engineering Research Institute (ERI), Gyeongsang National University, Jinju 660-701 (Korea, Republic of); Kim, Se Hoon; Kim, Kee Young [Dongwoo Fine-Chem Co., Ltd, Pyeongtaek 451-822 (Korea, Republic of); Kim, Yun-Hi, E-mail: jjkim@snu.ac.k, E-mail: skwon@gnu.ac.k [Department of Chemistry and RINS, Gyeongsang National University, Jinju 660-701 (Korea, Republic of)

2010-10-13

High-efficiency two-colour white organic light-emitting diodes (WOLEDs) comprising a newly synthesized iridium complex orange phosphor ((impy){sub 2}Ir(acac)) and a blue fluorophor (BD012) have been realized by placing several kinds of thin spacers between two emitters. Hybrid WOLEDs with a spacer composed of a hole-transporting N,N-dicarbazolyl-3,5-benzene (mCP) and an electron-transporting 4,7-diphenyl-1,10-phenanthroline (Bphen) exhibit a high external quantum efficiency (EQE) of up to 8.4% and a negligible colour change (the colour coordinate of (0.39, 0.41) at 1000 cd m{sup -2}) with increasing brightness, whereas the device using a hole-transporting mCP spacer shows a relatively low EQE of 6.2% and a large shift of emitting colour with increasing brightness. Device performance is further characterized based on the charge transport behaviour of the spacers inserted between the two emitters.

Lower Hybrid Drift Waves and Electromagnetic Electron Space-Phase Holes Associated With Dipolarization Fronts and Field-Aligned Currents Observed by the Magnetospheric Multiscale Mission During a Substorm

Science.gov (United States)

Le Contel, O.; Nakamura, R.; Breuillard, H.; Argall, M. R.; Graham, D. B.; Fischer, D.; Retinò, A.; Berthomier, M.; Pottelette, R.; Mirioni, L.; Chust, T.; Wilder, F. D.; Gershman, D. J.; Varsani, A.; Lindqvist, P.-A.; Khotyaintsev, Yu. V.; Norgren, C.; Ergun, R. E.; Goodrich, K. A.; Burch, J. L.; Torbert, R. B.; Needell, J.; Chutter, M.; Rau, D.; Dors, I.; Russell, C. T.; Magnes, W.; Strangeway, R. J.; Bromund, K. R.; Wei, H. Y.; Plaschke, F.; Anderson, B. J.; Le, G.; Moore, T. E.; Giles, B. L.; Paterson, W. R.; Pollock, C. J.; Dorelli, J. C.; Avanov, L. A.; Saito, Y.; Lavraud, B.; Fuselier, S. A.; Mauk, B. H.; Cohen, I. J.; Turner, D. L.; Fennell, J. F.; Leonard, T.; Jaynes, A. N.

2017-12-01

We analyze two ion scale dipolarization fronts associated with field-aligned currents detected by the Magnetospheric Multiscale mission during a large substorm on 10 August 2016. The first event corresponds to a fast dawnward flow with an antiparallel current and could be generated by the wake of a previous fast earthward flow. It is associated with intense lower hybrid drift waves detected at the front and propagating dawnward with a perpendicular phase speed close to the electric drift and the ion thermal velocity. The second event corresponds to a flow reversal: from southwward/dawnward to northward/duskward associated with a parallel current consistent with a brief expansion of the plasma sheet before the front crossing and with a smaller lower hybrid drift wave activity. Electromagnetic electron phase-space holes are detected near these low-frequency drift waves during both events. The drift waves could accelerate electrons parallel to the magnetic field and produce the parallel electron drift needed to generate the electron holes. Yet we cannot rule out the possibility that the drift waves are produced by the antiparallel current associated with the fast flows, leaving the source for the electron holes unexplained.

Measurement of the drift velocities of electrons and holes in high-ohmic silicon

International Nuclear Information System (INIS)

Scharf, Christian

2014-02-01

Measurements of the drift velocities of electrons and holes as a function of the electric field and the temperature in high-ohmic silicon of crystal orientation are presented. Significant differences between our results and literature values are observed. A new parametrization of the mobility is introduced. Current transients of n-type pad diodes, generated by fast laser pulses, were investigated in order to determine the drift velocity of electrons and holes separately. Two diodes of high-ohmic silicon (1.5 kΩcm and 5.5 kΩcm) from different manufacturers were investigated as cross check. The drift velocities were determined at electric fields ranging from 5 kV/cm to 50 kV/cm at temperatures ranging from 233 K to 333 K. The mobility parameters were obtained by fitting a simulation of charge drift in silicon to the measurements. Using the convolution theorem the response function of the read-out circuit was determined with the Fourier transforms of the measurement and the simulation. The simulated transient current pulses with the new mobility parametrization are consistent with the measured ones for the temperature and electric field range investigated here. Additionally, the mobility results from the fit are consistent with the mobility determined using the simpler time-of-flight method in the field range where this method is applicable. However, our measurements show a difference of up to 14 % to the values by Canali et al. (1971). The difference to the mobility parametrization by Jacoboni et al. (1977) is up to 24 % while this parametrization is widely used for simulations of the direction due to the lack of data for silicon.

Hybrid graphene and graphitic carbon nitride nanocomposite: gap opening, electron-hole puddle, interfacial charge transfer, and enhanced visible light response.

Science.gov (United States)

Du, Aijun; Sanvito, Stefano; Li, Zhen; Wang, Dawei; Jiao, Yan; Liao, Ting; Sun, Qiao; Ng, Yun Hau; Zhu, Zhonghua; Amal, Rose; Smith, Sean C

2012-03-07

Opening up a band gap and finding a suitable substrate material are two big challenges for building graphene-based nanodevices. Using state-of-the-art hybrid density functional theory incorporating long-range dispersion corrections, we investigate the interface between optically active graphitic carbon nitride (g-C(3)N(4)) and electronically active graphene. We find an inhomogeneous planar substrate (g-C(3)N(4)) promotes electron-rich and hole-rich regions, i.e., forming a well-defined electron-hole puddle, on the supported graphene layer. The composite displays significant charge transfer from graphene to the g-C(3)N(4) substrate, which alters the electronic properties of both components. In particular, the strong electronic coupling at the graphene/g-C(3)N(4) interface opens a 70 meV gap in g-C(3)N(4)-supported graphene, a feature that can potentially allow overcoming the graphene's band gap hurdle in constructing field effect transistors. Additionally, the 2-D planar structure of g-C(3)N(4) is free of dangling bonds, providing an ideal substrate for graphene to sit on. Furthermore, when compared to a pure g-C(3)N(4) monolayer, the hybrid graphene/g-C(3)N(4) complex displays an enhanced optical absorption in the visible region, a promising feature for novel photovoltaic and photocatalytic applications. © 2012 American Chemical Society

Low-frequency instabilities of electron-hole plasmas in crossed fields

International Nuclear Information System (INIS)

Schneider, W.; Kirchesch, P.

1978-01-01

Using local point-contact probes, we observed two types of low-frequency instabilities in n-InSb at 85 K if the samples were exposed to crossed fields. One is a local density instability with threshold frequencies of f = 1 ... 20 Mc, the other a more turbulent current instability. The threshold values of U 0 and B for the onset of these instabilities and the dependence of their amplitudes on the fields have been measured. If a rectangular semiconductor slab is placed in crossed fields, regions of high electric field strength at opposite edges of the contacts are caused by the distortion of the Hall field, giving rise to the generation of electron-hole plasmas by impact ionization. These plasmas are the sources of the observed instabilities. This is especially evident in the case of the local density instability, which originates at the anode high field corner. Several possible reasons for the development of the instabilities are discussed. (orig.) [de

Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity

International Nuclear Information System (INIS)

Lee, E.Y.; Brunett, B.A.; Olsen, R.W.; Van Scyoc, J.M. III; Hermon, H.; James, R.B.

1998-01-01

The electrical properties of CdZnTe radiation detectors are largely determined by electron and hole traps in this material. The traps, in addition to degrading the detector performance, can function as dopants and determine the resistivity of the material. Thermoelectric emission spectroscopy and thermally stimulated conductivity are used to detect these traps in a commercially available spectrometer-grade CdZnTe detector, and the electrical resistivity is measured as a function of temperature. A deep electron trap having an energy of 695 meV and cross section of 8 x 10 -16 cm 2 is detected and three hole traps having energies of 70 ± 20 meV, 105 ± 30 meV and 694 ± 162 meV are detected. A simple model based on these traps explains quantitatively all the data, including the electrical properties at room temperature and also their temperature dependence

Use of interfacial layers to prolong hole lifetimes in hematite probed by ultrafast transient absorption spectroscopy

Science.gov (United States)

Paradzah, Alexander T.; Diale, Mmantsae; Maabong, Kelebogile; Krüger, Tjaart P. J.

2018-04-01

Hematite is a widely investigated material for applications in solar water oxidation due primarily to its small bandgap. However, full realization of the material continues to be hampered by fast electron-hole recombination rates among other weaknesses such as low hole mobility, short hole diffusion length and low conductivity. To address the problem of fast electron-hole recombination, researchers have resorted to growth of nano-structured hematite, doping and use of under-layers. Under-layer materials enhance the photo-current by minimising electron-hole recombination through suppressing of back electron flow from the substrate, such as fluorine-doped tin oxide (FTO), to hematite. We have carried out ultrafast transient absorption spectroscopy on hematite in which Nb2O5 and SnO2 materials were used as interfacial layers to enhance hole lifetimes. The transient absorption data was fit with four different lifetimes ranging from a few hundred femtoseconds to a few nanoseconds. We show that the electron-hole recombination is slower in samples where interfacial layers are used than in pristine hematite. We also develop a model through target analysis to illustrate the effect of under-layers on electron-hole recombination rates in hematite thin films.

Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

Science.gov (United States)

Alekseev, P. S.; Dmitriev, A. P.; Gornyi, I. V.; Kachorovskii, V. Yu.; Narozhny, B. N.; Titov, M.

2018-02-01

Ultrapure conductors may exhibit hydrodynamic transport where the collective motion of charge carriers resembles the flow of a viscous fluid. In a confined geometry (e.g., in ultra-high-quality nanostructures), the electronic fluid assumes a Poiseuille-type flow. Applying an external magnetic field tends to diminish viscous effects leading to large negative magnetoresistance. In two-component systems near charge neutrality, the hydrodynamic flow of charge carriers is strongly affected by the mutual friction between the two constituents. At low fields, the magnetoresistance is negative, however, at high fields the interplay between electron-hole scattering, recombination, and viscosity results in a dramatic change of the flow profile: the magnetoresistance changes its sign and eventually becomes linear in very high fields. This nonmonotonic magnetoresistance can be used as a fingerprint to detect viscous flow in two-component conducting systems.

Electronic Commerce Resource Centers. An Industry--University Partnership.

Science.gov (United States)

Gulledge, Thomas R.; Sommer, Rainer; Tarimcilar, M. Murat

1999-01-01

Electronic Commerce Resource Centers focus on transferring emerging technologies to small businesses through university/industry partnerships. Successful implementation hinges on a strategic operating plan, creation of measurable value for customers, investment in customer-targeted training, and measurement of performance outputs. (SK)

Tuning the hybridization and magnetic ground state of electron and hole doped CeOs2Al10 : An x-ray spectroscopy study

Science.gov (United States)

Chen, Kai; Sundermann, Martin; Strigari, Fabio; Kawabata, Jo; Takabatake, Toshiro; Tanaka, Arata; Bencok, Peter; Choueikani, Fadi; Severing, Andrea

2018-04-01

Here we present linear and circular polarized soft x-ray absorption spectroscopy (XAS) data at the Ce M4 ,5 edges of the electron (Ir) and hole-doped (Re) Kondo semiconductor CeOs2Al10 . Both substitutions have a strong impact on the unusual high Néel temperature TN=28.5 K, and also the direction of the ordered moment in case of Ir. The substitution dependence of the linear dichroism is weak thus validating the crystal-field description of CeOs2Al10 being representative for the Re and Ir substituted compounds. The impact of electron and hole doping on the hybridization between conduction and 4 f electrons is related to the amount of f0 in the ground state and reduction of x-ray magnetic circular dichroism. A relationship of c f -hybridization strength and enhanced TN is discussed. The direction and doping dependence of the circular dichroism strongly supports the idea of strong Kondo screening along the crystallographic a direction.

Microstructure, Morphology, and Nanomechanical Properties Near Fine Holes Produced by Electro-Discharge Machining

Science.gov (United States)

Blau, P. J.; Howe, J. Y.; Coffey, D. W.; Trejo, R. M.; Kenik, E. D.; Jolly, B. C.; Yang, N.

2012-08-01

Fine holes in metal alloys are employed for many important technological purposes, including cooling and the precise atomization of liquids. For example, they play an important role in the metering and delivery of fuel to the combustion chambers in energy-efficient, low-emission diesel engines. Electro-discharge machining (EDM) is one process employed to produce such holes. Since the hole shape and bore morphology can affect fluid flow, and holes also represent structural discontinuities in the tips of the spray nozzles, it is important to understand the microstructures adjacent to these holes, the features of the hole walls, and the nanomechanical properties of the material that was in some manner altered by the EDM hole-making process. Several techniques were used to characterize the structure and properties of spray-holes in a commercial injector nozzle. These include scanning electron microscopy, cross sectioning and metallographic etching, bore surface roughness measurements by optical interferometry, scanning electron microscopy, and transmission electron microscopy of recast EDM layers extracted with the help of a focused ion beam.

Electrical control of single hole spins in nanowire quantum dots.

Science.gov (United States)

Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

2013-03-01

The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.

1976-10-01

Experiments were performed in an attempt to make thin n + contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400 0 C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n + contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current

Some cosmological consequences of primordial black-hole evaporations

International Nuclear Information System (INIS)

Carr, B.J.

1976-01-01

According to Hawking, primordial black holes of less than 10 15 g would have evaporated by now. This paper examines the way in which small primordial black holes could thereby have contributed to the background density of photons, nucleons, neutrinos, electrons, and gravitons in the universe. Any photons emitted late enough should maintain their emission temperature apart from a redshift effect: it is shown that the biggest contribution should come from primordial black holes of about 10 15 g, which evaporate in the present era, and it is argued that observations of the γ-ray background indicate that primordial black holes of this size must have a mean density less than 10 -8 times the critical density. Photons which were emitted sufficiently early to be thermalized could, in principle, have generated the 3 K background in an initially cold universe, but only if the density fluctuations in the early universe had a particular form and did not extend up to a mass scale of 10 15 g. Primordial black holes of less than 10 14 g should emit nucleons: it is shown that such nucleons could not contribute appreciably to the cosmic-ray background. However, nucleon emission could have generated the observed number density of baryons in an initially baryon-symmetric universe, provided some CP-violating process operates in black hole evaporations such that more baryons are always produced than antibaryons. We predict the spectrum of neutrinos, electrons, and gravitons which should result from primordial black-hole evaporations and show that the observational limits on the background electron flux might place a stronger limitation on the number of 10 15 g primordial black holes than the γ-ray observations. Finally, we examine the limits that various observations place on the strength of any long-range baryonic field whose existence might be hypothesized as a means of preserving baryon number in black-hole evaporations

The Non-Equilibrium Statistical Distribution Function for Electrons and Holes in Semiconductor Heterostructures in Steady-State Conditions

Directory of Open Access Journals (Sweden)

Krzysztof Jόzwikowska

2015-06-01

Full Text Available The main goal of this work is to determine a statistical non-equilibrium distribution function for the electron and holes in semiconductor heterostructures in steady-state conditions. Based on the postulates of local equilibrium, as well as on the integral form of the weighted Gyarmati’s variational principle in the force representation, using an alternative method, we have derived general expressions, which have the form of the Fermi–Dirac distribution function with four additional components. The physical interpretation of these components has been carried out in this paper. Some numerical results of a non-equilibrium distribution function for an electron in HgCdTe structures are also presented.

Mass formula for quasi-black holes

International Nuclear Information System (INIS)

Lemos, Jose P. S.; Zaslavskii, Oleg B.

2008-01-01

A quasi-black hole, either nonextremal or extremal, can be broadly defined as the limiting configuration of a body when its boundary approaches the body's quasihorizon. We consider the mass contributions and the mass formula for a static quasi-black hole. The analysis involves careful scrutiny of the surface stresses when the limiting configuration is reached. It is shown that there exists a strict correspondence between the mass formulas for quasi-black holes and pure black holes. This perfect parallelism exists in spite of the difference in derivation and meaning of the formulas in both cases. For extremal quasi-black holes the finite surface stresses give zero contribution to the total mass. This leads to a very special version of Abraham-Lorentz electron in general relativity in which the total mass has pure electromagnetic origin in spite of the presence of bare stresses.

Ultrafast exciton decay in PbS quantum dots through simultaneous electron and hole recombination with a surface-localized ion pair

Energy Technology Data Exchange (ETDEWEB)

Edme, Kedy; Bettis Homan, Stephanie; Nepomnyashchii, Alexander B.; Weiss, Emily A., E-mail: e-weiss@northwestern.edu

2016-06-01

Highlights: • We synthesize complexes of PbS quantum dots (QDs) and tetracyanoquinodimethane (TCNQ). Each PbS QD spontaneously reduces up to 17 TCNQ molecules. • The photoluminescence of the PbS QDs is quenched in the presence of the reduced TCNQ species through ultrafast non-radiative, simultaneous decay of the electron and hole. • We assign this decay to a four-carrier, concerted charge recombination mechanism with the surface localized sulfur–TCNQ{sup x−} ion pair. - Abstract: This paper describes the ultrafast decay of the band-edge exciton in PbS quantum dots (QDs) through simultaneous recombination of the excitonic hole and electron with the surface localized ion pair formed upon adsorption of tetracyanoquinodimethane (TCNQ). Each PbS QD (R = 1.8 nm) spontaneously reduces up to 17 TCNQ molecules upon adsorption of the TCNQ molecule to a sulfur on the QD surface. The photoluminescence of the PbS QDs is quenched in the presence of the reduced TCNQ species through ultrafast (⩽15-ps) non-radiative decay of the exciton; the rate constant for the decay process increases approximately linearly with the number of adsorbed, reduced TCNQ molecules. Near-infrared and mid-infrared transient absorption show that this decay occurs through simultaneous transfer of the excitonic electron and hole, and is assigned to a four-carrier, concerted charge recombination mechanism based on the observations that (i) the PL of the QDs recovers when spontaneously reduced TCNQ{sup 1−} desorbs from the QD surface upon addition of salt, and (ii) the PL of the QDs is preserved when another spontaneous oxidant, ferrocinium, which cannot participate in charge transfer in its reduced state, is substituted for TCNQ.

Hole energy and momentum distributions in valence bands

International Nuclear Information System (INIS)

Laan, G. van der.

1982-01-01

In order to understand the electrical and magnetic properties of solids, the knowledge of the density of states and the dispersion relation of the valence bands is indispensable. This thesis offers some alternative methods to obtain information about the nature of the valence band. Part A deals with the energy distribution of the photoelectrons. A simple model, which explains the core hole satellite structure in compounds with large correlation effects between the valence band holes and the created photo-hole, is outlined. CuCl, CuX 2 (X = F Cl and Br) are studied, by photoemission and Auger electron spectroscopies in determining the valence band properties. Part B deals with the simultaneous measurement of the energy and the wave vector of the emitted electrons. A practical example is given for the determination of the dispersion relation in copper. The measurements of a surface resonance band and the distribution of the secondary electrons are also reported. (Auth.)

Measurement of Effective Drift Velocities of Electrons and Holes in Shallow Multiple Quantum Well P-I Modulators

Science.gov (United States)

Yang, Ching-Mei

1995-01-01

P-i-n diodes containing multiple quantum wells (MQWs) in the i-region are the building blocks for photonic devices. When we apply electric field across these devices and illuminate it with light, photo-carriers are created in the i-region. These carriers escape from the wells and drift toward the electrodes; thus photo-voltage is created. The rise- and decay-times of photo-voltages are related to the transport of carriers. In this dissertation, we present theoretical and experimental studies on carrier transport mechanisms of three shallow MQW GaAs/Al _{x}Ga_{1-x}As p-i-n diodes (x = 0.02, 0.04, 0.08) at various bias voltages. We start with the description of the sample structures and their package. We then present the characteristics of these samples including their transmission spectra and responsivity. We will demonstrate that the over-all high quality of these samples, including a strong exciton resonant absorption, ~100% internal quantum efficiencies and completely depleted i-region at bias between +0.75 V to -5 V bias. In our theoretical studies, we first discuss the possible carrier sweep-out mechanisms and estimate the response times associated with these mechanisms. Based on our theoretical model, we conclude that only the drift times of carriers and enhanced diffusion times are important for shallow MQW p-i-n diodes: at high bias, the fast drift times of electrons and holes control the rise-times; at low bias, the slow drift times of holes and the enhanced diffusion times control the decay-times. We have performed picosecond time-resolved pump/probe electro-absorption measurements on these samples. We then obtained the drift times, effective drift velocities and effective mobilities of electrons and holes for these devices. We find that the carrier effective drift velocities (especially for holes) seemed insensitive to the Al concentration in the barriers (in the range of x = 2% to 8%), even though the x = 2% sample does show an overall faster response

30 CFR 816.13 - Casing and sealing of drilled holes: General requirements.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 3 2010-07-01 2010-07-01 false Casing and sealing of drilled holes: General...-SURFACE MINING ACTIVITIES § 816.13 Casing and sealing of drilled holes: General requirements. Each exploration hole, other drill or borehole, well, or other exposed underground opening shall be cased, sealed...

Lewis Base Passivation of Hybrid Halide Perovskites Slows Electron-Hole Recombination: Time-Domain Ab Initio Analysis.

Science.gov (United States)

Liu, Lihong; Fang, Wei-Hai; Long, Run; Prezhdo, Oleg V

2018-03-01

Nonradiative electron-hole recombination plays a key role in determining photon conversion efficiencies in solar cells. Experiments demonstrate significant reduction in the recombination rate upon passivation of methylammonium lead iodide perovskite with Lewis base molecules. Using nonadiabatic molecular dynamics combined with time-domain density functional theory, we find that the nonradiative charge recombination is decelerated by an order of magnitude upon adsorption of the molecules. Thiophene acts by the traditional passivation mechanism, forcing electron density away from the surface. In contrast, pyridine localizes the electron at the surface while leaving it energetically near the conduction band edge. This is because pyridine creates a stronger coordinative bond with a lead atom of the perovskite and has a lower energy unoccupied orbital compared with thiophene due to the more electronegative nitrogen atom relative to thiophene's sulfur. Both molecules reduce two-fold the nonadiabatic coupling and electronic coherence time. A broad range of vibrational modes couple to the electronic subsystem, arising from inorganic and organic components. The simulations reveal the atomistic mechanisms underlying the enhancement of the excited-state lifetime achieved by the perovskite passivation, rationalize the experimental results, and advance our understanding of charge-phonon dynamics in perovskite solar cells.

First observation of liquid-xenon proportional electroluminescence in THGEM holes

International Nuclear Information System (INIS)

Arazi, L; Itay, R; Landsman, H; Levinson, L; Pasmantirer, B; Rappaport, M L; Vartsky, D; Breskin, A; Coimbra, A E C

2013-01-01

Radiation-induced proportional-electroluminescence UV signals, emitted from the holes of a Thick Gas Electron Multiplier (THGEM) electrode immersed in liquid xenon, were recorded with a PMT for the first time. Significant photon yields were observed with gamma photons and alpha particles using a 0.4 mm thick electrode with 0.3 mm diameter holes; at 2 kV across the THGEM the photon yield was estimated to be ∼ 600 UV photons/electron over 4π. This may pave the way towards the realization of novel single-phase noble-liquid radiation detectors incorporating liquid hole-multipliers (LHM); their concept is presented

USE OF ELECTRONIC EDUCATIONAL RESOURCES WHEN TRAINING IN WORK WITH SPREADSHEETS

Directory of Open Access Journals (Sweden)

Х А Гербеков

2017-12-01

Full Text Available Today the tools for maintaining training courses based on opportunities of information and communication technologies are developed. Practically in all directions of preparation and on all subject matters electronic textbook and self-instruction manuals are created. Nevertheless the industry of computer educational and methodical materials actively develops and gets more and more areas of development and introduction. In this regard more and more urgent is a problem of development of the electronic educational resources adequate to modern educational requirements. Creation and the organization of training courses with use of electronic educational resources in particular on the basis of Internet technologies remains a difficult methodical task.In article the questions connected with development of electronic educational resources for use when studying the substantial line “Information technologies” of a school course of informatics in particular for studying of spreadsheets are considered. Also the analysis of maintenance of a school course and the unified state examination from the point of view of representation of task in him corresponding to the substantial line of studying “Information technologies” on mastering technology of information processing in spreadsheets and the methods of visualization given by means of charts and schedules is carried out.

Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

Science.gov (United States)

Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

2018-05-16

A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.

A novel strategy to increase separated electron-hole dipoles in commercial Si based solar panel to assist photovoltaic effect

Science.gov (United States)

Feng, Yefeng; He, Cheng-En; Xu, Zhichao; Hu, Jianbing; Peng, Cheng

2018-01-01

Interface induced polarization has been found to have a significant impact on dielectric properties of 2-2 type polymer composites bearing Si based semi-conducting ceramic sheets. Inherent overall polarity of polymer layers in 2-2 composites has been verified to be closely connected with interface effect and achieved permittivity in composites. In present work, conducting performances of monocrystalline Si sheets coated by varied high polarity material layers were deeply researched. The positive results inspired us to propose a novel strategy to improve separated electron-hole dipoles in commercial Si based solar cell panel for assisting photovoltaic effect, based on strong interface induced polarization. Conducting features of solar panels coated by two different high polarity polymer layers were detected to be greatly elevated compared with solar panel standalone, thanks to interface induced polarization between panel and polymer. Polymer coating with higher polarity would lead to more separated electron-hole dipole pairs in solar panel contributing to higher conductivity of panel. Valid synergy of interface effect and photovoltaic effect was based on their unidirectional traits of electron transfer. Dielectric properties of solar panels in composites further confirmed that strategy. This work might provide a facile route to prepare promising Si based solar panels with higher photoelectric conversion efficiency by enhancing interface induced polarization between panel and polymer coating.

Many-electron effect in the resonant Auger electron spectroscopy spectra of adsorbates

International Nuclear Information System (INIS)

Ohno, Masahide

2007-01-01

It is shown by a many-body theory that a resonantly excited core hole state in a chemisorbed molecule such as CO/Ni, CO/Pd, and CO/Pt relaxes to a fully relaxed one, i.e., the ionized core hole state of the smallest binding energy observed by photoelectron spectroscopy, before the core hole decays so that the resonant Auger electron spectroscopy (RAES) spectrum shows the normal Auger decay spectrum. It is shown by a many-body theory that the Auger peaks on the higher kinetic energy (K.E.) side in the RAES or AES spectrum, i.e., so called back-bonding peaks, are the two-hole states consisting of a valence hole and a hole in the adsorbate-substrate hybrid states below the substrate Fermi level. The latter hole is the change in the density of the hybrid states occupied by the screening electron from the core hole state to the valence-hole state. The difference between the back-bonding peak energy and the single valence-hole energy provides an important information about the change in the density of the hybrid states occupied by the screening electron from the core hole state to the valence-hole state. The difference between the RAES spectrum measured at the resonance energy and the AES spectrum measured at far above the ionization limit shows the competition between relaxation and decay of shakeup satellites such as the charge transfer (CT) shakeup. The relaxation rate of the CT shakeup state can be determined by Auger-photoelectron coincidence spectroscopy (APECS)

Collisional spin-oriented Sherman function in electron-hole semiconductor plasmas: Landau damping effect

Science.gov (United States)

Lee, Myoung-Jae; Jung, Young-Dae

2018-04-01

The influence of Landau damping on the spin-oriented collisional asymmetry is investigated in electron-hole semiconductor plasmas. The analytical expressions of the spin-singlet and the spin-triplet scattering amplitudes as well as the spin-oriented asymmetry Sherman function are obtained as functions of the scattering angle, the Landau parameter, the effective Debye length, and the collision energy. It is found that the Landau damping effect enhances the spin-singlet and spin-triplet scattering amplitudes in the forward and back scattering domains, respectively. It is also found that the Sherman function increases with an increase in the Landau parameter. In addition, the spin-singlet scattering process is found to be dominant rather than the spin-triplet scattering process in the high collision energy domain.

Sensitivity of GRETINA position resolution to hole mobility

Energy Technology Data Exchange (ETDEWEB)

Prasher, V.S. [Department of Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Cromaz, M. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Merchan, E.; Chowdhury, P. [Department of Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Crawford, H.L. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Lister, C.J. [Department of Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Campbell, C.M.; Lee, I.Y.; Macchiavelli, A.O. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Radford, D.C. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Wiens, A. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

2017-02-21

The sensitivity of the position resolution of the gamma-ray tracking array GRETINA to the hole charge-carrier mobility parameter is investigated. The χ{sup 2} results from a fit of averaged signal (“superpulse”) data exhibit a shallow minimum for hole mobilities 15% lower than the currently adopted values. Calibration data on position resolution is analyzed, together with simulations that isolate the hole mobility dependence of signal decomposition from other effects such as electronics cross-talk. The results effectively exclude hole mobility as a dominant parameter for improving the position resolution for reconstruction of gamma-ray interaction points in GRETINA.

Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared

Directory of Open Access Journals (Sweden)

Xiong Gong

2010-07-01

Full Text Available Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.

Search for quantum black holes in the final state of one electron and one muon with CMS in 13 TeV data

Energy Technology Data Exchange (ETDEWEB)

Erdweg, Soeren; Gueth, Andreas; Hebbeker, Thomas; Keller, Henning; Meyer, Arnd; Mukherjee, Swagata [III. Physikalisches Institut A, RWTH Aachen (Germany)

2016-07-01

Many models of physics beyond the standard model predict charged lepton flavour violation. Low scale quantum gravity at the TeV scale could lead to the production of quantum black holes (QBH). They could decay into an electron and a muon and result in an excess of events at high invariant masses, thus leading to a striking signature with low standard model background. The analysis of the 2015 dataset of CMS corresponding to an integrated luminosity of 2.5 fb{sup -1} at a center of mass energy of 13 TeV is presented and interpreted in the context of quantum black holes.

Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode.

Science.gov (United States)

Zou, Haiyang; Li, Xiaogan; Peng, Wenbo; Wu, Wenzhuo; Yu, Ruomeng; Wu, Changsheng; Ding, Wenbo; Hu, Fei; Liu, Ruiyuan; Zi, Yunlong; Wang, Zhong Lin

2017-08-01

Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Analytical Study of Usage of Electronic Information Resources at Pharmacopoeial Libraries in India

Directory of Open Access Journals (Sweden)

Sunil Tyagi

2014-02-01

Full Text Available The objective of this study is to know the rate and purpose of the use of e-resource by the scientists at pharmacopoeial libraries in India. Among other things, this study examined the preferences of the scientists toward printed books and journals, electronic information resources, and pattern of using e-resources. Non-probability sampling specially accidental and purposive technique was applied in the collection of primary data through administration of user questionnaire. The sample respondents chosen for the study consists of principle scientific officer, senior scientific officer, scientific officer, and scientific assistant of different division of the laboratories, namely, research and development, pharmaceutical chemistry, pharmacovigilance, pharmacology, pharmacogonosy, and microbiology. The findings of the study reveal the personal experiences and perceptions they have had on practice and research activity using e-resource. The major findings indicate that of the total anticipated participants, 78% indicated that they perceived the ability to use computer for electronic information resources. The data analysis shows that all the scientists belonging to the pharmacopoeial libraries used electronic information resources to address issues relating to drug indexes and compendia, monographs, drugs obtained through online databases, e-journals, and the Internet sources—especially polices by regulatory agencies, contacts, drug promotional literature, and standards.

Cascading electron and hole transfer dynamics in a CdS/CdTe core-shell sensitized with bromo-pyrogallol red (Br-PGR): slow charge recombination in type II regime.

Science.gov (United States)

Maity, Partha; Debnath, Tushar; Chopra, Uday; Ghosh, Hirendra Nath

2015-02-14

Ultrafast cascading hole and electron transfer dynamics have been demonstrated in a CdS/CdTe type II core-shell sensitized with Br-PGR using transient absorption spectroscopy and the charge recombination dynamics have been compared with those of CdS/Br-PGR composite materials. Steady state optical absorption studies suggest that Br-PGR forms strong charge transfer (CT) complexes with both the CdS QD and CdS/CdTe core-shell. Hole transfer from the photo-excited QD and QD core-shell to Br-PGR was confirmed by both steady state and time-resolved emission spectroscopy. Charge separation was also confirmed by detecting electrons in the conduction band of the QD and the cation radical of Br-PGR as measured from femtosecond transient absorption spectroscopy. Charge separation in the CdS/Br-PGR composite materials was found to take place in three different pathways, by transferring the photo-excited hole of CdS to Br-PGR, electron injection from the photo-excited Br-PGR to the CdS QD, and direct electron transfer from the HOMO of Br-PGR to the conduction band of the CdS QD. However, in the CdS/CdTe/Br-PGR system hole transfer from the photo-excited CdS to Br-PGR and electron injection from the photo-excited Br-PGR to CdS take place after cascading through the CdTe shell QD. Charge separation also takes place via direct electron transfer from the Br-PGR HOMO to the conduction band of CdS/CdTe. Charge recombination (CR) dynamics between the electron in the conduction band of the CdS QD and the Br-PGR cation radical were determined by monitoring the bleach recovery kinetics. The CR dynamics were found to be much slower in the CdS/CdTe/Br-PGR system than in the CdS/Br-PGR system. The formation of the strong CT complex and the separation of charges cascading through the CdTe shell help to slow down charge recombination in the type II regime.

Page 170 Use of Electronic Resources by Undergraduates in Two ...

African Journals Online (AJOL)

undergraduate students use electronic resources such as NUC virtual library, HINARI, ... web pages articles from magazines, encyclopedias, pamphlets and other .... of Nigerian university libraries have Internet connectivity, some of the system.

30 CFR 18.29 - Access openings and covers, including unused lead-entrance holes.

Science.gov (United States)

2010-07-01

... lead-entrance holes. 18.29 Section 18.29 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... unused lead-entrance holes. (a) Access openings in explosion-proof enclosures will be permitted only... Figure 1 in Appendix II.) (c) Holes in enclosures that are provided for lead entrances but which are not...

Model of e-learning with electronic educational resources of new generation

Directory of Open Access Journals (Sweden)

A. V. Loban

2017-01-01

Full Text Available Purpose of the article: improving of scientific and methodical base of the theory of the е-learning of variability. Methods used: conceptual and logical modeling of the е-learning of variability process with electronic educational resource of new generation and system analysis of the interconnection of the studied subject area, methods, didactics approaches and information and communication technologies means. Results: the formalization complex model of the е-learning of variability with electronic educational resource of new generation is developed, conditionally decomposed into three basic components: the formalization model of the course in the form of the thesaurusclassifier (“Author of e-resource”, the model of learning as management (“Coordination. Consultation. Control”, the learning model with the thesaurus-classifier (“Student”. Model “Author of e-resource” allows the student to achieve completeness, high degree of didactic elaboration and structuring of the studied material in triples of variants: modules of education information, practical task and control tasks; the result of the student’s (author’s of e-resource activity is the thesaurus-classifier. Model of learning as management is based on the principle of personal orientation of learning in computer environment and determines the logic of interaction between the lecturer and the student when determining the triple of variants individually for each student; organization of a dialogue between the lecturer and the student for consulting purposes; personal control of the student’s success (report generation and iterative search for the concept of the class assignment in the thesaurus-classifier before acquiring the required level of training. Model “Student” makes it possible to concretize the learning tasks in relation to the personality of the student and to the training level achieved; the assumption of the lecturer about the level of training of a

The research progress of perforating gun inner wall blind hole machining method

Science.gov (United States)

Wang, Zhe; Shen, Hongbing

2018-04-01

Blind hole processing method has been a concerned technical problem in oil, electronics, aviation and other fields. This paper introduces different methods for blind hole machining, focus on machining method for perforating gun inner wall blind hole processing. Besides, the advantages and disadvantages of different methods are also discussed, and the development trend of blind hole processing were introduced significantly.

A survey of the use of electronic scientific information resources among medical and dental students

Directory of Open Access Journals (Sweden)

Aarnio Matti

2006-05-01

Full Text Available Abstract Background To evaluate medical and dental students' utilization of electronic information resources. Methods A web survey sent to 837 students (49.9% responded. Results Twenty-four per cent of medical students and ninteen per cent of dental students searched MEDLINE 2+ times/month for study purposes, and thiry-two per cent and twenty-four per cent respectively for research. Full-text articles were used 2+ times/month by thirty-three per cent of medical and ten per cent of dental students. Twelve per cent of respondents never utilized either MEDLINE or full-text articles. In multivariate models, the information-searching skills among students were significantly associated with use of MEDLINE and full-text articles. Conclusion Use of electronic resources differs among students. Forty percent were non-users of full-text articles. Information-searching skills are correlated with the use of electronic resources, but the level of basic PC skills plays not a major role in using these resources. The student data shows that adequate training in information-searching skills will increase the use of electronic information resources.

The StarDate Black Hole Encyclopedia Website blackholes.stardate.org

Science.gov (United States)

Gebhardt, Karl; Benningfield, D.; Preston, S.

2013-01-01

The StarDate Black Hole Encyclopedia website was developed over the past seven years to provide an extensive but easy-to-read resource for the public and students. A Spanish-language version, Enciclopedia de agujeros negros, is also available at blackholes.radiouniverso.org. Evaluation shows that the sites are used by the public, students, and astronomy professionals, and the site is among the top references in most web searches for individual black holes. The site comprises seven major subsections: Basics, Directory, Research, History, Pop Culture, News, and Resources. The Basics section introduces black holes, explains how they are discovered and studied, and covers their basis in the theory of gravity. This section also includes a six-minute video introduction, “Black Holes: Stranger than Fiction.” The Directory section contains extensive descriptions of more than 80 well-known stellar, intermediate, and supermassive black holes as well as images and vital statistics of each. The Research section takes a look at three NSF-funded projects, including the work of Andrea Ghez, Karl Gebhardt and Jenny Greene, and the LIGO project. The History section provides a timeline of black holes from Isaac Newton to the present. Some of the best and worst roles played by black holes in films, TV shows, and books are included in the Pop Culture section (and pop culture references and images are sprinkled through the rest of the site). An archive of news reports about black holes is available in the News section, which provides links to the original stories or press releases. And the Resources section offers FAQs, articles from StarDate magazine and radio programs, activities for students that are tied to national standards, a glossary, and a reading list of books and websites. We have conducted both quantitative and qualitative evaluation on the black hole websites. This material is based upon work supported by the National Science Foundation under Grant No. 0935841. Any

Access to electronic information resources by students of federal ...

African Journals Online (AJOL)

The paper discusses access to electronic information resources by students of Federal Colleges of Education in Eha-Amufu and Umunze. Descriptive survey design was used to investigate sample of 526 students. Sampling technique used was a Multi sampling technique. Data for the study were generated using ...

Adoption and use of electronic information resources by medical ...

African Journals Online (AJOL)

This study investigated the adoption and use of electronic information resources by medical science students of the University of Benin. The descriptive survey research design was adopted for the study and 390 students provided the data. Data collected were analysed with descriptive Statistics(Simple percentage and ...

Grid-Based Hole Recovery Mechanism Using Virtual Force in Hybrid WSNs

OpenAIRE

Kuo-Feng Huang; Shih-Jung Wu

2015-01-01

Sensor nodes are typically empowered with scarce energy resources and limited computing functionality in wireless sensor networks. However, nonuniform random deployment, depletion, and failure of sensor nodes will lead to generating coverage hole in the entire network. These hole problems to occur result in reducing the data transmission performance or in additional power consumption. Consequently, the hole problem is an important factor for the coverage completeness to prolong the network li...

Where Do Electronic Books Fit in the College Research Arsenal of Resources?

Science.gov (United States)

Barbier, Patricia

2007-01-01

Student use of electronic books has become an accepted supplement to traditional resources. Student use and satisfaction was monitored through an online course discussion board. Increased use of electronic books indicate this service is an accepted supplement to the print book collection.

Hole localization, migration, and the formation of peroxide anion in perovskite SrTiO3

Science.gov (United States)

Chen, Hungru; Umezawa, Naoto

2014-07-01

Hybrid density functional calculations are carried out to investigate the behavior of holes in SrTiO3. As in many other oxides, it is shown that a hole tend to localize on one oxygen forming an O- anion with a concomitant lattice distortion; therefore a hole polaron. The calculated emission energy from the recombination of the localized hole and a conduction-band electron is about 2.5 eV, in good agreement with experiments. Therefore the localization of the hole or self-trapping is likely to be responsible for the green photoluminescence at low temperature, which was previously attributed to an unknown defect state. Compared to an electron, the calculated hole polaron mobility is three orders of magnitude lower at room temperature. In addition, two O- anions can bind strongly to form an O22- peroxide anion. No electronic states associated with the O22- peroxide anion are located inside the band gap or close to the band edges, indicating that it is electronically inactive. We suggest that in addition to the oxygen vacancy, the formation of the O22- peroxide anion can be an alternative to compensate acceptor doping in SrTiO3.

Valence holes observed in nanodiamonds dispersed in water

Science.gov (United States)

Petit, Tristan; Pflüger, Mika; Tolksdorf, Daniel; Xiao, Jie; Aziz, Emad F.

2015-02-01

Colloidal dispersion is essential for most nanodiamond applications, but its influence on nanodiamond electronic properties remains unknown. Here we have probed the electronic structure of oxidized detonation nanodiamonds dispersed in water by using soft X-ray absorption and emission spectroscopies at the carbon and oxygen K edges. Upon dispersion in water, the π* transitions from sp2-hybridized carbon disappear, and holes in the valence band are observed.Colloidal dispersion is essential for most nanodiamond applications, but its influence on nanodiamond electronic properties remains unknown. Here we have probed the electronic structure of oxidized detonation nanodiamonds dispersed in water by using soft X-ray absorption and emission spectroscopies at the carbon and oxygen K edges. Upon dispersion in water, the π* transitions from sp2-hybridized carbon disappear, and holes in the valence band are observed. Electronic supplementary information (ESI) available: Experimental methods, details on XAS/XES normalization and background correction procedures. See DOI: 10.1039/c4nr06639a

Al-bound hole polarons in TiO2

International Nuclear Information System (INIS)

Stashans, Arvids; Bermeo, Sthefano

2009-01-01

Changes in the structural and electronic properties of TiO 2 (anatase and rutile) due to the Al-doping are studied using a quantum-chemical approach based on the Hartree-Fock theory. The formation of hole polarons trapped at oxygen sites near the Al impurity has been discovered and their spatial configuration are discussed. The occurrence of well-localized one-center hole polarons in rutile may influence its photocatalytic activity. Optical absorption energy for this hole center is obtained, 0.4 eV, using the ΔSCF approach.

White holes and eternal black holes

International Nuclear Information System (INIS)

Hsu, Stephen D H

2012-01-01

We investigate isolated white holes surrounded by vacuum, which correspond to the time reversal of eternal black holes that do not evaporate. We show that isolated white holes produce quasi-thermal Hawking radiation. The time reversal of this radiation, incident on a black hole precursor, constitutes a special preparation that will cause the black hole to become eternal. (paper)

Influence of heat treatment on hole transfer dynamics in core-shell quantum dot/organic hole conductor hybrid films

Science.gov (United States)

Sun, Mingye; Zheng, Youjin; Zhang, Lei; Zhao, Liping; Zhang, Bing

2017-08-01

The influence of heat treatment on hole transfer (HT) processes from the CdSe/ZnS and CdSe/CdS/ZnS quantum dots (QDs) to 4,4‧,4″-Tris(carbazol-9-yl)-triphenylamine (TCTA) in QD/TCTA hybrid films has been researched with time-resolved photoluminescence (PL) spectroscopy. The PL dynamic results demonstrated a heat-treatment-temperature-dependent HT process from the core-shell CdSe QDs to TCTA. The HT rates and efficiencies can be effectively increased due to reduced distance between core-shell CdSe QDs and TCTA after heat treatment. The CdS shell exhibited a more obvious effect on HT from the core-shell CdSe QDs to TCTA than on electron transfer to TiO2, due to higher barrier for holes to tunnel through CdS shell and larger effective mass of holes in CdS than electrons. These results indicate that heat treatment would be an effective means to further optimize solid-state QD sensitized solar cells and rational design of CdS shell is significant.

Mesoscopic chaos mediated by Drude electron-hole plasma in silicon optomechanical oscillators

Science.gov (United States)

Wu, Jiagui; Huang, Shu-Wei; Huang, Yongjun; Zhou, Hao; Yang, Jinghui; Liu, Jia-Ming; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Duan, Shukai; Wei Wong, Chee

2017-01-01

Chaos has revolutionized the field of nonlinear science and stimulated foundational studies from neural networks, extreme event statistics, to physics of electron transport. Recent studies in cavity optomechanics provide a new platform to uncover quintessential architectures of chaos generation and the underlying physics. Here, we report the generation of dynamical chaos in silicon-based monolithic optomechanical oscillators, enabled by the strong and coupled nonlinearities of two-photon absorption induced Drude electron–hole plasma. Deterministic chaotic oscillation is achieved, and statistical and entropic characterization quantifies the chaos complexity at 60 fJ intracavity energies. The correlation dimension D2 is determined at 1.67 for the chaotic attractor, along with a maximal Lyapunov exponent rate of about 2.94 times the fundamental optomechanical oscillation for fast adjacent trajectory divergence. Nonlinear dynamical maps demonstrate the subharmonics, bifurcations and stable regimes, along with distinct transitional routes into chaos. This provides a CMOS-compatible and scalable architecture for understanding complex dynamics on the mesoscopic scale. PMID:28598426

Hole dynamics and spin currents after ionization in strong circularly polarized laser fields

International Nuclear Information System (INIS)

Barth, Ingo; Smirnova, Olga

2014-01-01

We apply the time-dependent analytical R-matrix theory to develop a movie of hole motion in a Kr atom upon ionization by strong circularly polarized field. We find rich hole dynamics, ranging from rotation to swinging motion. The motion of the hole depends on the final energy and the spin of the photoelectron and can be controlled by the laser frequency and intensity. Crucially, hole rotation is a purely non-adiabatic effect, completely missing in the framework of quasistatic (adiabatic) tunneling theories. We explore the possibility to use hole rotation as a clock for measuring ionization time. Analyzing the relationship between the relative phases in different ionization channels we show that in the case of short-range electron-core interaction the hole is always initially aligned along the instantaneous direction of the laser field, signifying zero delays in ionization. Finally, we show that strong-field ionization in circular fields creates spin currents (i.e. different flow of spin-up and spin-down density in space) in the ions. This phenomenon is intimately related to the production of spin-polarized electrons in strong laser fields Barth and Smirnova (2013 Phys. Rev. A 88 013401). We demonstrate that rich spin dynamics of electrons and holes produced during strong field ionization can occur in typical experimental conditions and does not require relativistic intensities or strong magnetic fields. (paper)

Materials and mechanisms of hole superconductivity

Energy Technology Data Exchange (ETDEWEB)

Hirsch, J.E., E-mail: jhirsch@ucsd.edu [Department of Physics, University of California, San Diego, La Jolla, CA 92093-0319 (United States)

2012-01-15

We study the applicability of the model of hole superconductivity to materials. Both conventional and unconventional materials are considered. Many different classes of materials are discussed. The theory is found suitable to describe all of them. No other theory of superconductivity can describe all these classes of materials. The theory of hole superconductivity proposes that there is a single mechanism of superconductivity that applies to all superconducting materials. This paper discusses several material families where superconductivity occurs and how they can be understood within this theory. Materials discussed include the elements, transition metal alloys, high T{sub c} cuprates both hole-doped and electron-doped, MgB{sub 2}, iron pnictides and iron chalcogenides, doped semiconductors, and elements under high pressure.

Micro-hole drilling and cutting using femtosecond fiber laser

Science.gov (United States)

Huang, Huan; Yang, Lih-Mei; Liu, Jian

2014-05-01

Micro-hole drilling and cutting in ambient air are presented by using a femtosecond fiber laser. At first, the micro-hole drilling was investigated in both transparent (glasses) and nontransparent (metals and tissues) materials. The shape and morphology of the holes were characterized and evaluated with optical and scanning electron microscopy. Debris-free micro-holes with good roundness and no thermal damage were demonstrated with the aspect ratio of 8∶1. Micro-hole drilling in hard and soft tissues with no crack or collateral thermal damage is also demonstrated. Then, trench micromachining and cutting were studied for different materials and the effect of the laser parameters on the trench properties was investigated. Straight and clean trench edges were obtained with no thermal damage.

Strategic Planning for Electronic Resources Management: A Case Study at Gustavus Adolphus College

Science.gov (United States)

Hulseberg, Anna; Monson, Sarah

2009-01-01

Electronic resources, the tools we use to manage them, and the needs and expectations of our users are constantly evolving; at the same time, the roles, responsibilities, and workflow of the library staff who manage e-resources are also in flux. Recognizing a need to be more intentional and proactive about how we manage e-resources, the…

On the presentation of wave phenomena of electrons with the Young-Feynman experiment

International Nuclear Information System (INIS)

Matteucci, Giorgio

2011-01-01

The Young-Feynman two-hole interferometer is widely used to present electron wave-particle duality and, in particular, the buildup of interference fringes with single electrons. The teaching approach consists of two steps: (i) electrons come through only one hole but diffraction effects are disregarded and (ii) electrons come through both holes and interference fringes are described. Therefore, a student might believe that wave phenomena are not revealed in case (i), but they arise only by the combined effect of electrons from the two holes. To avoid misunderstanding regarding the distribution of electrons passing through one hole, Fresnel and Fraunhofer diffraction patterns are discussed. In particular, an original experiment, realized with a standard electron microscope and a sample with round holes, is presented to introduce the wave nature of electrons. The experimental results clearly show that a careful discussion of electron diffraction phenomena from one hole provides students with the evidence that the interference experiment from both holes is not strictly required to show the superposition of electron waves.

REVIEW OF MOODLE PLUGINS FOR DESIGNING MULTIMEDIA ELECTRONIC EDUCATIONAL RESOURCES FROM LANGUAGE DISCIPLINES

Directory of Open Access Journals (Sweden)

Anton M. Avramchuk

2015-09-01

Full Text Available Today the problem of designing multimedia electronic educational resources from language disciplines in Moodle is very important. This system has a lot of different, powerful resources, plugins to facilitate the learning of students with language disciplines. This article presents an overview and comparative analysis of the five Moodle plugins for designing multimedia electronic educational resources from language disciplines. There have been considered their key features and functionality in order to choose the best for studying language disciplines in the Moodle. Plugins are compared by a group of experts according to the criteria: efficiency, functionality and easy use. For a comparative analysis of the plugins it is used the analytic hierarchy process.

Topological transport from a black hole

Directory of Open Access Journals (Sweden)

Dmitry Melnikov

2018-03-01

Full Text Available In this paper the low temperature zero-frequency transport in a 2+1-dimensional theory dual to a dyonic black hole is discussed. It is shown that transport exhibits topological features: the transverse electric and heat conductivities satisfy the Wiedemann–Franz law of free electrons; the direct heat conductivity is measured in units of the central charge of CFT2+1, while the direct electric conductivity vanishes; the thermoelectric conductivity is non-zero at vanishing temperature, while the O(T behavior, controlled by the Mott relation, is subleading. Provided that the entropy of the black hole, and the dual system, is non-vanishing at T=0, the observations indicate that the dyonic black hole describes a ħ→0 limit of a highly degenerate topological state, in which the black hole charge measures the density of excited non-abelian quasiparticles. The holographic description gives further evidence that non-abelian nature of quasiparticles can be determined by the low temperature behavior of the thermoelectric transport.

Modern ICT Tools: Online Electronic Resources Sharing Using Web ...

African Journals Online (AJOL)

Modern ICT Tools: Online Electronic Resources Sharing Using Web 2.0 and Its Implications For Library And Information Practice In Nigeria. ... The PDF file you selected should load here if your Web browser has a PDF reader plug-in installed (for example, a recent version of Adobe Acrobat Reader). If you would like more ...

Potential beneficial effects of electron-hole plasmas created in silicon sensors by XFEL-like high intensity pulses for detector development

Energy Technology Data Exchange (ETDEWEB)

Weiss, Joel T.; Becker, Julian; Shanks, Katherine S.; Philipp, Hugh T.; Tate, Mark W. [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M., E-mail: smg26@cornell.edu [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States)

2016-07-27

There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single x-rays/pixel/pulse to >10{sup 6} x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 10{sup 11} x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HDR-PAD) by (a) increasing the speed of charge removal strategies [4], (b) increasing integrator range by implementing adaptive gain [5], and (c) exploiting the extended charge collection times of electron-hole pair plasma clouds that form when a sufficiently large number of x-rays are absorbed in a detector sensor in a short period of time [6]. We have developed a measurement platform similar to the one used in [6] to study the effects of high electron-hole densities in silicon sensors using optical lasers to emulate the conditions found at XFELs. Characterizations of the employed tunable wavelength laser with picosecond pulse duration have shown Gaussian focal spots sizes of 6 ± 1 µm rms over the relevant spectrum and 2 to 3 orders of magnitude increase in available intensity compared to previous measurements presented in [6]. Results from measurements on a typical pixelated silicon diode intended for use with the HDR-PAD (150 µm pixel size, 500 µm thick sensor) are presented.

Electron-beam induced conduction in some polymers

International Nuclear Information System (INIS)

Suzuoki, Yasuo; Mizutani, Teruyoshi; Ieda, Masayuki

1976-01-01

The charge signal induced by pulsed electron beam consists of two components, i.e. the fast and the slow components. The slow component which corresponds to carrier transport via shallow traps exhibited an asymmetry with respect to the bias field polarity. The asymmetry revealed that the main carriers which drifted via shallow traps were electrons in PET, both electrons and holes in PEN, and holes in PS. TSC spectra of electron-beam induced electrets proved directly the existence of electron shallow traps in PET and both electron and hole traps in PEN. Their trap energies were 0.1 to 0.2 eV. (auth.)

Hole-capture properties of the electron-irradiation-induced deep-level H5 in p-type InP: A charge-controlled bistable model

International Nuclear Information System (INIS)

Bretagnon, T.; Bastide, G.; Rouzeyre, M.

1989-01-01

The electron-induced irradiated defect H 5 in Zn-doped p-type InP is an unusual hole trap, since its temperature-independent weak-hole capture cross section, σ c ∼10 -21 cm 2 , is 6 orders of magnitude lower than the value obtained from thermal-emission rates. We present a charge-controlled bistable configuration-coordinate diagram that explains this large difference and accounts for the optical-absorption properties. In addition, a microscopic D In n+ -Zn - defect, made by pairing under electrostatic attraction of the ionized acceptor Zn - and of a positively charged primitive defect D In n+ of the In sublattice, is tentatively proposed as a plausible complex at the origin of H 5

THE MODEL OF LINGUISTIC TEACHERS’ COMPETENCY DEVELOPMENT ON DESIGNING MULTIMEDIA ELECTRONIC EDUCATIONAL RESOURCES IN THE MOODLE SYSTEM

Directory of Open Access Journals (Sweden)

Anton M. Avramchuk

2017-10-01

Full Text Available The article is devoted to the problem of developing the competency of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system. The concept of "the competence of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system" is justified and defined. Identified and characterized the components by which the levels of the competency development of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system should be assessed. Developed a model for the development of the competency of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system, which is based on the main scientific approaches, used in adult education, and consists of five blocks: target, informative, technological, diagnostic and effective.

Developing Humanities Collections in the Digital Age: Exploring Humanities Faculty Engagement with Electronic and Print Resources

Science.gov (United States)

Kachaluba, Sarah Buck; Brady, Jessica Evans; Critten, Jessica

2014-01-01

This article is based on quantitative and qualitative research examining humanities scholars' understandings of the advantages and disadvantages of print versus electronic information resources. It explores how humanities' faculty members at Florida State University (FSU) use print and electronic resources, as well as how they perceive these…

Electrons, holes, and excitons in GaAs polytype quantum dots

Energy Technology Data Exchange (ETDEWEB)

Climente, Juan I.; Segarra, Carlos; Rajadell, Fernando; Planelles, Josep, E-mail: josep.planelles@uji.es [Departament de Química Física i Analítica, Universitat Jaume I, E-12080 Castelló (Spain)

2016-03-28

Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes.

The fate of electron-hole pairs in polymer:fullerene blends for organic photovoltaics

Science.gov (United States)

Causa', Martina; de Jonghe-Risse, Jelissa; Scarongella, Mariateresa; Brauer, Jan C.; Buchaca-Domingo, Ester; Moser, Jacques-E.; Stingelin, Natalie; Banerji, Natalie

2016-09-01

There has been long-standing debate on how free charges are generated in donor:acceptor blends that are used in organic solar cells, and which are generally comprised of a complex phase morphology, where intermixed and neat phases of the donor and acceptor material co-exist. Here we resolve this question, basing our conclusions on Stark effect spectroscopy data obtained in the absence and presence of externally applied electric fields. Reconciling opposing views found in literature, we unambiguously demonstrate that the fate of photogenerated electron-hole pairs--whether they will dissociate to free charges or geminately recombine--is determined at ultrafast times, despite the fact that their actual spatial separation can be much slower. Our insights are important to further develop rational approaches towards material design and processing of organic solar cells, assisting to realize their purported promise as lead-free, third-generation energy technology that can reach efficiencies over 10%.

Morphology and physical properties of solar coronal holes

International Nuclear Information System (INIS)

Rozelot, J.P.

1983-01-01

By their peculiar characteristics, coronal holes induce on Earth climatic variations and cyclic effects, not well known nowadays. Because of low electronical density and very low temperature, study of these holes was neglected. The author presents the results of the observations from discovery in the fifteens. He gives some new results, a theoretical model and not well resolved questions which can conduct to new methods of searching [fr

Order enables efficient electron-hole separation at an organic heterojunction with a small energy loss

KAUST Repository

Menke, S. Matthew

2018-01-12

Donor–acceptor organic solar cells often show low open-circuit voltages (VOC) relative to their optical energy gap (Eg) that limit power conversion efficiencies to ~12%. This energy loss is partly attributed to the offset between Eg and that of intermolecular charge transfer (CT) states at the donor–acceptor interface. Here we study charge generation occurring in PIPCP:PC61BM, a system with a very low driving energy for initial charge separation (Eg−ECT ~ 50 meV) and a high internal quantum efficiency (ηIQE ~ 80%). We track the strength of the electric field generated between the separating electron-hole pair by following the transient electroabsorption optical response, and find that while localised CT states are formed rapidly (<100 fs) after photoexcitation, free charges are not generated until 5 ps after photogeneration. In PIPCP:PC61BM, electronic disorder is low (Urbach energy <27 meV) and we consider that free charge separation is able to outcompete trap-assisted non-radiative recombination of the CT state.

Order enables efficient electron-hole separation at an organic heterojunction with a small energy loss

KAUST Repository

Menke, S. Matthew; Cheminal, Alexandre; Conaghan, Patrick; Ran, Niva A.; Greehnam, Neil C.; Bazan, Guillermo C.; Nguyen, Thuc-Quyen; Rao, Akshay; Friend, Richard H.

2018-01-01

Donor–acceptor organic solar cells often show low open-circuit voltages (VOC) relative to their optical energy gap (Eg) that limit power conversion efficiencies to ~12%. This energy loss is partly attributed to the offset between Eg and that of intermolecular charge transfer (CT) states at the donor–acceptor interface. Here we study charge generation occurring in PIPCP:PC61BM, a system with a very low driving energy for initial charge separation (Eg−ECT ~ 50 meV) and a high internal quantum efficiency (ηIQE ~ 80%). We track the strength of the electric field generated between the separating electron-hole pair by following the transient electroabsorption optical response, and find that while localised CT states are formed rapidly (<100 fs) after photoexcitation, free charges are not generated until 5 ps after photogeneration. In PIPCP:PC61BM, electronic disorder is low (Urbach energy <27 meV) and we consider that free charge separation is able to outcompete trap-assisted non-radiative recombination of the CT state.

Scale-invariant puddles in graphene: Geometric properties of electron-hole distribution at the Dirac point.

Science.gov (United States)

Najafi, M N; Nezhadhaghighi, M Ghasemi

2017-03-01

We characterize the carrier density profile of the ground state of graphene in the presence of particle-particle interaction and random charged impurity in zero gate voltage. We provide detailed analysis on the resulting spatially inhomogeneous electron gas, taking into account the particle-particle interaction and the remote Coulomb disorder on an equal footing within the Thomas-Fermi-Dirac theory. We present some general features of the carrier density probability measure of the graphene sheet. We also show that, when viewed as a random surface, the electron-hole puddles at zero chemical potential show peculiar self-similar statistical properties. Although the disorder potential is chosen to be Gaussian, we show that the charge field is non-Gaussian with unusual Kondev relations, which can be regarded as a new class of two-dimensional random-field surfaces. Using Schramm-Loewner (SLE) evolution, we numerically demonstrate that the ungated graphene has conformal invariance and the random zero-charge density contours are SLE_{κ} with κ=1.8±0.2, consistent with c=-3 conformal field theory.

Al-bound hole polarons in TiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Stashans, Arvids, E-mail: arvids@utpl.edu.ec [Grupo de Fisicoquimica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Bermeo, Sthefano [Grupo de Fisicoquimica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)] [Escuela de Electronica y Telecomunicaciones, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)

2009-09-18

Changes in the structural and electronic properties of TiO{sub 2} (anatase and rutile) due to the Al-doping are studied using a quantum-chemical approach based on the Hartree-Fock theory. The formation of hole polarons trapped at oxygen sites near the Al impurity has been discovered and their spatial configuration are discussed. The occurrence of well-localized one-center hole polarons in rutile may influence its photocatalytic activity. Optical absorption energy for this hole center is obtained, 0.4 eV, using the {Delta}SCF approach.

On the theory of hole propagation in an antiferromagnetic background

International Nuclear Information System (INIS)

Kuzemsky, A.L.

1994-10-01

The spectrum of hole quasiparticles and the role of magnetic correlations has been considered in the self-consistent Irreducible Green Functions formalism, motivated from Strongly Correlated Electron systems for correlated electron models of high-Tc superconductivity. The hole quasiparticle dynamics has been discussed for t-J model and compared with that of the spin-fermion model. For this Kondo-Heisenberg-type model it was clearly pointed out on the self-energy level, beyond Hartree-Fock approximation, how the one-and two magnon processes define the true nature of carriers in HTSC. (author). 57 refs

Optical spin orientation of minority holes in a modulation-doped GaAs/(Ga,Al)As quantum well

Science.gov (United States)

Koudinov, A. V.; Dzhioev, R. I.; Korenev, V. L.; Sapega, V. F.; Kusrayev, Yu. G.

2016-04-01

The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility two-dimensional electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and polarization of the photoluminescence in a magnetic field are well described in a model whose main elements are resonant absorption of the exciting light by the Landau levels and mixing of the heavy- and light-hole subbands. After subtraction of these effects, the observed influence of magnetic fields on the spin polarization can be well interpreted by a standard approach of the optical orientation method. The spin relaxation of holes is controlled by the Dyakonov-Perel' mechanism. Deceleration of the spin relaxation by the magnetic field occurs through the Ivchenko mechanism—due to the cyclotron motion of holes. Mobility of holes was found to be two orders of magnitude smaller than that of electrons, being determined by the scattering of holes by the electron gas.

The effect of electron and hole doping on the thermoelectric properties of shandite-type Co3Sn2S2

Science.gov (United States)

Mangelis, Panagiotis; Vaqueiro, Paz; Jumas, Jean-Claude; da Silva, Ivan; Smith, Ronald I.; Powell, Anthony V.

2017-07-01

Electron and hole doping in Co3Sn2S2, through chemical substitution of cobalt by the neighbouring elements, nickel and iron, affects both the structure and thermoelectric properties. Electron doping to form Co3-xNixSn2S2 (0≤x≤3) results in an expansion of the kagome layer and materials become increasingly metallic as cobalt is substituted. Conversely, hole doping in Co3-xFexSn2S2 (0≤x≤0.6) leads to a transition from metallic to n-type semiconducting behaviour at x=0.5. Iron substitution induces a small increase in the separation between the kagome layers and improves the thermoelectric performance. Neutron diffraction data reveal that substitution occurs at the Co 9(d) site in a disordered fashion. Mössbauer spectroscopy reveals two iron environments with very different isomer shifts, which may be indicative of a mixed-valence state, while Sn exhibits an oxidation state close to zero in both series. Co2.6Fe0.4Sn2S2 exhibits a maximum figure-of-merit, ZT=0.2 at 523 K while Co2.4Fe0.6Sn2S2 reaches a power factor of 10.3 μW cm-1 K-2 close to room temperature.

Charge-compensation in 3d-transition-metal-oxide intercalation cathodes through the generation of localized electron holes on oxygen.

Science.gov (United States)

Luo, Kun; Roberts, Matthew R; Hao, Rong; Guerrini, Niccoló; Pickup, David M; Liu, Yi-Sheng; Edström, Kristina; Guo, Jinghua; Chadwick, Alan V; Duda, Laurent C; Bruce, Peter G

2016-07-01

During the charging and discharging of lithium-ion-battery cathodes through the de- and reintercalation of lithium ions, electroneutrality is maintained by transition-metal redox chemistry, which limits the charge that can be stored. However, for some transition-metal oxides this limit can be broken and oxygen loss and/or oxygen redox reactions have been proposed to explain the phenomenon. We present operando mass spectrometry of (18)O-labelled Li1.2[Ni0.13(2+)Co0.13(3+)Mn0.54(4+)]O2, which demonstrates that oxygen is extracted from the lattice on charging a Li1.2[Ni0.13(2+)Co0.13(3+)Mn0.54(4+)]O2 cathode, although we detected no O2 evolution. Combined soft X-ray absorption spectroscopy, resonant inelastic X-ray scattering spectroscopy, X-ray absorption near edge structure spectroscopy and Raman spectroscopy demonstrates that, in addition to oxygen loss, Li(+) removal is charge compensated by the formation of localized electron holes on O atoms coordinated by Mn(4+) and Li(+) ions, which serve to promote the localization, and not the formation, of true O2(2-) (peroxide, O-O ~1.45 Å) species. The quantity of charge compensated by oxygen removal and by the formation of electron holes on the O atoms is estimated, and for the case described here the latter dominates.

Dynamic study of a compressed electron layer during the hole-boring stage in a sharp-front laser interaction region

Directory of Open Access Journals (Sweden)

W. P. Wang

2012-08-01

Full Text Available This study investigates the dynamics of a compressed electron layer (CEL when a circularly polarized laser pulse with a sharp front irradiates a high-density foil. A time-dependent model for CEL motion during the hole-boring stage is proposed to describe details of the interaction for any shape of laser pulse. The opacity case, where the laser pulse is totally reflected, is investigated using this model. The results obtained are consistent with the results from particle-in-cell (PIC simulations. A relaxation distance determined by the laser-front steepness is necessary to build a stable CEL state before ions rejoin into the CEL. For the transparent case, the laser-front steepness is important for the formation of the stable CEL state at the back surface of the target. Considering the motion of ions, both the CEL and ion dynamics are important to rebalance the laser pressure and electrostatic charge-separation force as the hole-boring stage changes to the light-sail stage.

A hole accelerator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Printed Wiring Board Cleaner Technologies Substitutes Assessment: Making Holes Conductive

Science.gov (United States)

This document presents comparative risk, competitiveness, and resource requirements on technologies for performing the “making holes conductive” function during printed wiring board manufacturing.

Electronic resource management systems a workflow approach

CERN Document Server

Anderson, Elsa K

2014-01-01

To get to the bottom of a successful approach to Electronic Resource Management (ERM), Anderson interviewed staff at 11 institutions about their ERM implementations. Among her conclusions, presented in this issue of Library Technology Reports, is that grasping the intricacies of your workflow-analyzing each step to reveal the gaps and problems-at the beginning is crucial to selecting and implementing an ERM. Whether the system will be used to fill a gap, aggregate critical data, or replace a tedious manual process, the best solution for your library depends on factors such as your current soft

Is there a hole in the topside, equatorial ionosphere?

Directory of Open Access Journals (Sweden)

D. Gallagher

Full Text Available A paper in 2000 (Huba, 2000 found a depression in electron density in the topside ionosphere near the magnetic equator, based on the SAMI-2 physical ionospheric model. The model showed, for the first time, the formation of a hole in electron density in the altitude range 1500–2500 km at geomagnetic equatorial latitudes. The model produced the hole because of transhemispheric O+ flows that collisionally couple to H+, transporting it to lower altitudes, and thereby reducing the electron density at high altitudes. At that time and until now, no published observations have been reported to confirm or refute this numerical result. Recent, new analysis of Dynamics Explorer 1 Retarding Ion Mass Spectrometer measurements provides the first tentative experimental support for this model result. Keywords: Ionosphere, Topside, Magnetic equator, Plasmasphere

Electronic Resource Management System. Vernetzung von Lizenzinformationen

Directory of Open Access Journals (Sweden)

Michaela Selbach

2014-12-01

Full Text Available In den letzten zehn Jahren spielen elektronische Ressourcen im Bereich der Erwerbung eine zunehmend wichtige Rolle: Eindeutig lässt sich hier ein Wandel in den Bibliotheken (fort vom reinen Printbestand zu immer größeren E-Only-Beständen feststellen. Die stetig wachsende Menge an E-Ressourcen und deren Heterogenität stellt Bibliotheken vor die Herausforderung, die E-Ressourcen effizient zu verwalten. Nicht nur Bibliotheken, sondern auch verhandlungsführende Institutionen von Konsortial- und Allianzlizenzen benötigen ein geeignetes Instrument zur Verwaltung von Lizenzinformationen, welches den komplexen Anforderungen moderner E-Ressourcen gerecht wird. Die Deutsche Forschungsgemeinschaft (DFG unterstützt ein Projekt des Hochschulbibliothekszentrums des Landes Nordrhein-Westfalen (hbz, der Universitätsbibliothek Freiburg, der Verbundzentrale des Gemeinsamen Bibliotheksverbundes (GBV und der Universitätsbibliothek Frankfurt, in dem ein bundesweit verfügbares Electronic Ressource Managementsystem (ERMS aufgebaut werden soll. Ein solches ERMS soll auf Basis einer zentralen Knowledge Base eine einheitliche Nutzung von Daten zur Lizenzverwaltung elektronischer Ressourcen auf lokaler, regionaler und nationaler Ebene ermöglichen. Statistische Auswertungen, Rechteverwaltung für alle angeschlossenen Bibliotheken, kooperative Datenpflege sowie ein über standardisierte Schnittstellen geführter Datenaustausch stehen bei der Erarbeitung der Anforderungen ebenso im Fokus wie die Entwicklung eines Daten- und Funktionsmodells. In the last few years the importance of electronic resources in library acquisitions has increased significantly. There has been a shift from mere print holdings to both e- and print combinations and even e-only subscriptions. This shift poses a double challenge for libraries: On the one hand they have to provide their e-resource collections to library users in an appealing way, on the other hand they have to manage these

Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

Science.gov (United States)

Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

2015-10-01

In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

The Electron Microscopy Outreach Program: A Web-based resource for research and education.

Science.gov (United States)

Sosinsky, G E; Baker, T S; Hand, G; Ellisman, M H

1999-01-01

We have developed a centralized World Wide Web (WWW)-based environment that serves as a resource of software tools and expertise for biological electron microscopy. A major focus is molecular electron microscopy, but the site also includes information and links on structural biology at all levels of resolution. This site serves to help integrate or link structural biology techniques in accordance with user needs. The WWW site, called the Electron Microscopy (EM) Outreach Program (URL: http://emoutreach.sdsc.edu), provides scientists with computational and educational tools for their research and edification. In particular, we have set up a centralized resource containing course notes, references, and links to image analysis and three-dimensional reconstruction software for investigators wanting to learn about EM techniques either within or outside of their fields of expertise. Copyright 1999 Academic Press.

Effects of electron blocking and hole trapping of the red guest emitter materials on hybrid white organic light emitting diodes

International Nuclear Information System (INIS)

Hong, Lin-Ann; Vu, Hoang-Tuan; Juang, Fuh-Shyang; Lai, Yun-Jr; Yeh, Pei-Hsun; Tsai, Yu-Sheng

2013-01-01

Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm 2 , and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39)

Effects of electron blocking and hole trapping of the red guest emitter materials on hybrid white organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Hong, Lin-Ann; Vu, Hoang-Tuan [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Juang, Fuh-Shyang, E-mail: fsjuang@seed.net.tw [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Lai, Yun-Jr [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Yeh, Pei-Hsun [Raystar Optronics, Inc., 5F No. 25, Keya Rd. Daya Township, Taichung County, Taiwan (China); Tsai, Yu-Sheng [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China)

2013-10-01

Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm{sup 2}, and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39)

Technical Communicator: A New Model for the Electronic Resources Librarian?

Science.gov (United States)

Hulseberg, Anna

2016-01-01

This article explores whether technical communicator is a useful model for electronic resources (ER) librarians. The fields of ER librarianship and technical communication (TC) originated and continue to develop in relation to evolving technologies. A review of the literature reveals four common themes for ER librarianship and TC. While the…

Hole hopping rates in single strand oligonucleotides

Energy Technology Data Exchange (ETDEWEB)

Borrelli, Raffaele [Dipartimento di Scienze Agrarie, Forestali e Alimentari, Università di Torino, Largo Paolo Braccini 2, I-10095 Grugliasco, TO (Italy); Capobianco, Amedeo [Dipartimento di Chimica e Biologia, Università di Salerno, Via Giovanni Paolo II, I-84084 Fisciano, SA (Italy); Peluso, Andrea, E-mail: apeluso@unisa.it [Dipartimento di Chimica e Biologia, Università di Salerno, Via Giovanni Paolo II, I-84084 Fisciano, SA (Italy)

2014-08-31

Highlights: • DNA hole transfer rates have been computed. • Delocalized adenine domains significantly affect hole transfer rates in DNA. • Franck–Condon weighted density of state from DFT normal modes. • DNA application in molecular electronics. - Abstract: The rates of hole transfer between guanine and adenine in single strand DNA have been evaluated by using Fermi’s golden rule and Kubo’s generating function approach for the Franck–Condon weighted density of states. The whole sets of the normal modes and vibrational frequencies of the two nucleobases, obtained at DFT/B3LYP level of calculation, have been considered in computations. The results show that in single strand the pyramidalization/planarization mode of the amino groups of both nucleobases plays the major role. At room temperature, the Franck–Condon density of states extends over a wide range of hole site energy difference, 0–1 eV, giving some hints about the design of oligonucleotides of potential technological interest.

Plasma dynamics near critical density inferred from direct measurements of laser hole boring

Science.gov (United States)

Gong, Chao; Tochitsky, Sergei Ya.; Fiuza, Frederico; Pigeon, Jeremy J.; Joshi, Chan

2016-06-01

We have used multiframe picosecond optical interferometry to make direct measurements of the hole boring velocity, vHB, of the density cavity pushed forward by a train of C O2 laser pulses in a near critical density helium plasma. As the pulse train intensity rises, the increasing radiation pressure of each pulse pushes the density cavity forward and the plasma electrons are strongly heated. After the peak laser intensity, the plasma pressure exerted by the heated electrons strongly impedes the hole boring process and the vHB falls rapidly as the laser pulse intensity falls at the back of the laser pulse train. A heuristic theory is presented that allows the estimation of the plasma electron temperature from the measurements of the hole boring velocity. The measured values of vHB, and the estimated values of the heated electron temperature as a function of laser intensity are in reasonable agreement with those obtained from two-dimensional numerical simulations.

Dynamics of an excess hole in the 1-methyl-1-butyl-pyrrolidinium dicyanamide ionic-liquid

Science.gov (United States)

Wu, Fei; Xu, Changhui; Margulis, Claudio J.

2018-05-01

In a set of recent publications [C. J. Margulis et al., J. Am. Chem. Soc. 133, 20186 (2011); C. H. Xu et al., J. Am. Chem. Soc. 135, 17528 (2013); C. H. Xu and C. J. Margulis, J. Phys. Chem. B 119, 532 (2015); and K. B. Dhungana et al., J. Phys. Chem. B 121, 8809 (2017)], we explored for selected ionic liquids the early stages of excess charge localization and reactivity relevant both to electrochemical and radiation chemistry processes. In particular, Xu and Margulis [J. Phys. Chem. B 119, 532 (2015)] explored the dynamics of an excess electron in 1-methyl-1-butyl-pyrrolidinium dicyanamide. When electrons are produced from an ionic liquid, the more elusive hole species are also generated. Depending on the nature of cations and anions and the relative alignment of their electronic states in the condensed phase, the very early hole species can nominally be neutral radicals—if the electron is generated from anions—or doubly charged radical cations if their origin is from cations. However, in reality early excess charge localization is more complex and often involves more than one ion. The dynamics and the transient spectroscopy of the hole are the main objects of this study. We find that in the case of 1-methyl-1-butyl-pyrrolidinium dicyanamide, it is the anions that can most easily lose an electron becoming radical species, and that hole localization is mostly on anionic nitrogen. We also find that the driving force for localization of an excess hole appears to be smaller than that for an excess electron in 1-methyl-1-butyl-pyrrolidinium dicyanamide. The early transient hole species can absorb light in the visible, ultraviolet, and near infrared regions, and we are able to identify the type of states being connected by these transitions.

Extraordinary mid-infrared transmission of subwavelength holes in gold films

KAUST Repository

Yue, Weisheng

2014-04-01

Gold (Au) nanoholes are fabricated with electron-beam lithography and used for the investigation of extraordinary transmission in mid-infrared regime. Transmission properties of the nanoholes are studied as the dependence on hole-size. Transmittance spectra are characterized by Fourier transform infrared spectroscopy (FTIR) and enhanced transmittance through the subwavelength holes is observed. The transmission spectra exhibit well-defined maximum and minimum of which the position are determined by the lattice of the hole array. The hole-size primarily influence the transmission intensity and bandwidth of the resonance peak. With an increase of hole-size, while keep lattice constant fixed, the intensity of the resonance peak and the bandwidth increases, which are due to the localized surface plasmons. Numerical simulation for the transmission through the subwavelength holes is performed and the simulated results agree with the experimental observations. Copyright © 2014 American Scientific Publishers.

Extraordinary mid-infrared transmission of subwavelength holes in gold films

KAUST Repository

Yue, Weisheng; Wang, Zhihong; Yang, Yang; Chen, Longqing; Syed, Ahad A.; Wang, Xianbin

2014-01-01

Gold (Au) nanoholes are fabricated with electron-beam lithography and used for the investigation of extraordinary transmission in mid-infrared regime. Transmission properties of the nanoholes are studied as the dependence on hole-size. Transmittance spectra are characterized by Fourier transform infrared spectroscopy (FTIR) and enhanced transmittance through the subwavelength holes is observed. The transmission spectra exhibit well-defined maximum and minimum of which the position are determined by the lattice of the hole array. The hole-size primarily influence the transmission intensity and bandwidth of the resonance peak. With an increase of hole-size, while keep lattice constant fixed, the intensity of the resonance peak and the bandwidth increases, which are due to the localized surface plasmons. Numerical simulation for the transmission through the subwavelength holes is performed and the simulated results agree with the experimental observations. Copyright © 2014 American Scientific Publishers.

MODEL OF AN ELECTRONIC EDUCATIONAL RESOURCE OF NEW GENERATION

Directory of Open Access Journals (Sweden)

Anatoliy V. Loban

2016-01-01

Full Text Available The mathematical structure of the modular architecture of an electronic educational resource (EER of new generation, which allows to decompose the process of studying the subjects of the course at a hierarchically ordered set of data (knowledge and procedures for manipulating them, to determine the roles of participants of process of training of and technology the development and use of EOR in the study procrate.

Far infrared spectroscopy of solids. I. Impurity states in Al2O3. II. Electron-hole droplets in Ge

International Nuclear Information System (INIS)

Aurbauch, R.L.

1975-01-01

Far infrared Fourier transform spectroscopy was used to study the low lying vibronic states of Mn 3+ in Al 2 O 3 and the plasma absorption of electron-hole droplets in Ge. The transmission of Mn-doped samples of Al 2 O 3 was measured in the frequency range from 3 to 30 cm -1 in applied magnetic fields up to 50 kG. Absorption lines were observed due to both ground and excited state transitions. Polarization measurements established that these absorption lines were due to electric dipole transitions. Temperature dependence measurements were used to derive a level diagram for the low lying states of Mn 3+ . A phenomenological model based on an electronic Hamiltonian was developed which successfully describes the data. The empirically determined trigonal field and spin-orbit quenching parameters of this model are 0.7 and 0.1 respectively. This quenching is attributed to the dynamic Jahn--Teller interaction. The plasma absorption of small (α) electron-hole drops in Ge was measured in the frequency range from 30 to 300 cm -1 . The observed absorption is in good agreement with measurements by Vavilov and other workers. A theoretical model which includes both intraband and interband contributions to the dielectric constant in the Rayleigh limit of Mie theory is used to describe the observed lineshape. Measurements of plasma absorption of large (γ) drops in inhomogeneously stressed Ge were made in magnetic fields up to 50 kG. The lineshape at zero applied field was calculated in the large sphere limit of Mie theory including intraband terms and a zero-strain interband term. Qualitative agreement with experiment was obtained. The peak absorption shifted quadratically with applied magnetic field and the total plasma absorption increased. No oscillatory structure was observed in the field-dependence of the total absorption

Direct luminescence evidence for the degenerate electron-hole plasma formation in A/sup II/B/sup VI/ semiconductors

Energy Technology Data Exchange (ETDEWEB)

Brodin, M.S.; Bandura, V.M.; Matsko, M.G. (AN Ukrainskoj SSR, Kiev. Inst. Fiziki)

1983-09-01

The emission spectra of ZnTe and ZnSe crystals are investigated at T = 4.2 K at high excitation densities by a Coumarin 30 and 120 dye laser. It is shown that for excitation densities R/sub exc/ > 0.1 MW/cm/sup 2/ the emission spectrum of ZnTe exhibits the P-band due to inelastic exciton-exciton scattering. For R/sub exc/ > 6 MW/cm/sup 2/ the emission of a degenerate electron-hole plasma (EHP) is observed. These emission bands may be differentiated by scanning the exciting quanta energy in the short-wavelength tail region.

Direct luminescence evidence for the degenerate electron-hole plasma formation in A/sup II/B/sup VI/ semiconductors

International Nuclear Information System (INIS)

Brodin, M.S.; Bandura, V.M.; Matsko, M.G.

1983-01-01

The emission spectra of ZnTe and ZnSe crystals are investigated at T = 4.2 K at high excitation densities by a Coumarin 30 and 120 dye laser. It is shown that for excitation densities R/sub exc/ > 0.1 MW/cm 2 the emission spectrum of ZnTe exhibits the P-band due to inelastic exciton-exciton scattering. For R/sub exc/ > 6 MW/cm 2 the emission of a degenerate electron-hole plasma (EHP) is observed. These emission bands may be differentiated by scanning the exciting quanta energy in the short-wavelength tail region. (author)

Effects of Intercalation on the Hole Mobility of Amorphous Semiconducting Polymer Blends

KAUST Repository

Cates, Nichole C.

2010-06-08

Fullerenes have been shown to intercalate between the side chains of many crystalline and semicrystalline polymers and to affect the properties of polymer:fullerene bulk heterojunction solar cells. Here we present the first in-depth study of intercalation in an amorphous polymer. We study blends of the widely studied amorphous polymer poly(2-methoxy-5-(3studied amorphous polymer poly(,7·studied amorphous polymer poly(-dimethyloctyloxy)-p-phenylene vinylene) (MDMO-PPV) with a variety of molecules using photoluminescence measurements, scanning electron microscopy, and space-charge limited current mobility measurements. The blends with elevated hole mobilities exhibit complete photoluminescence quenching and show no phase separation in a scanning electron microscope. We conclude that intercalation occurs in MDMO-PPV:fullerene blends and is responsible for the increase in the MDMO-PPV hole mobility by several orders of magnitude when it is blended with fullerenes, despite the dilution of the hole-conducting polymer with an electron acceptor. © 2010 American Chemical Society.

Black holes

International Nuclear Information System (INIS)

Feast, M.W.

1981-01-01

This article deals with two questions, namely whether it is possible for black holes to exist, and if the answer is yes, whether we have found any yet. In deciding whether black holes can exist or not the central role in the shaping of our universe played by the forse of gravity is discussed, and in deciding whether we are likely to find black holes in the universe the author looks at the way stars evolve, as well as white dwarfs and neutron stars. He also discusses the problem how to detect a black hole, possible black holes, a southern black hole, massive black holes, as well as why black holes are studied

Measurements and characterization of a hole trap in neutron-irradiated silicon

International Nuclear Information System (INIS)

Avset, B.S.

1996-04-01

The report describes measurements on a hole trap in neutron irradiated silicon diodes made one high resistivity phosphorus doped floatzone silicon. The hole trap was detected by Deep Level Transient Spectroscopy. This measurement gave a trap activation energy of 0.475 MeV. Other measurements showed that the trap has very small capture cross sections for both holes and electrons (10 -18 to 10 -20 cm 2 ) and that the hole capture cross section is temperature dependent. The energy level position of the trap has been estimated to be between 0.25 and 0.29 eV from the valence band. 25 refs., 21 figs., 4 tabs

On the hole accelerator for III-nitride light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Zhang, Yonghui; Bi, Wengang; Geng, Chong; Xu, Shu; Demir, Hilmi Volkan; Sun, Xiao Wei

2016-01-01

In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-Al x Ga 1−x N heterojunction) with different designs, including the AlN composition in the p-Al x Ga 1−x N layer, and the thickness for the p-GaN layer and the p-Al x Ga 1−x N layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-Al x Ga 1−x N layer increases. Meanwhile, with p-GaN layer or p-Al x Ga 1−x N layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-Al x Ga 1−x N design, and the hole accelerator can effectively increase the hole injection if properly designed.

Fundamental studies of energy-and hole/electron- transfer in hydroporphyrin architectures

Energy Technology Data Exchange (ETDEWEB)

Bocian, David F. [University of California, Riverside, CA (United States)

2014-08-20

The long-term objective of the Bocian/Holten/Lindsey research program is to design, synthesize, and characterize tetrapyrrole-based molecular architectures that absorb sunlight, funnel energy, and separate charge with high efficiency and in a manner compatible with current and future solar-energy conversion schemes. The synthetic tetrapyrroles include porphyrins and hydroporphyrins; the latter classes of molecules encompass analogues of the naturally occurring chlorophylls and bacteriochlorophylls (e.g., chlorins, bacteriochlorins, and their derivatives). The attainment of the goals of the research program requires the close interplay of molecular design and synthesis (Lindsey group), static and time-resolved optical spectroscopic measurements (Holten group), and electrochemical, electron paramagnetic resonance, and resonance Raman studies, as well as density functional theory calculations (Bocian Group). The proposed research encompasses four interrelated themes: (1) Determination of the rates of ground-state hole/electron transfer between (hydro)porphyrins in multipigment arrays as a function of array size, distance between components, linker type, site of linker connection, and frontier molecular orbital composition. (2) Examination of excited-state energy transfer among hydroporphyrins in multipigment arrrays, including both pairwise and non-adjacent transfer, with a chief aim to identify the relative contributions of through-space (Förster) and through-bond (Dexter) mechanisms of energy transfer, including the roles of site of linker connection and frontier molecular orbital composition. (3) Elucidation of the role of substituents in tuning the spectral and electronic properties of bacteriochlorins, with a primary aim of learning how to shift the long-wavelength absorption band deeper into the near-infrared region. (4) Continued development of the software package PhotochemCAD for spectral manipulations and calculations through the compilation of a database

Hydrostratigraphic interpretation of test-hole and geophysical data, Upper Loup River Basin, Nebraska, 2008-10

Science.gov (United States)

Hobza, Christopher M.; Asch, Theodore H.; Bedrosian, Paul A.

2011-01-01

Nebraska's Upper Loup Natural Resources District is currently (2011) participating in the Elkhorn-Loup Model to understand the effect of various groundwater-management scenarios on surface-water resources. During Phase 1 of the Elkhorn-Loup Model, a lack of subsurface geological information in the Upper Loup Natural Resources District, hereafter referred to as the upper Loup study area, was identified as a gap in current knowledge that needed to be addressed. To improve the understanding of the hydrogeology of the upper Loup study area, the U.S. Geological Survey, in cooperation with the Upper Loup Natural Resources District and the University of Nebraska Conservation and Survey Division, collected and described the lithology of drill cuttings from nine test holes, and concurrently collected borehole geophysical data to identify the base of the High Plains aquifer. Surface geophysical data also were collected using time-domain electromagnetic (TDEM) and audio-magnetotelluric (AMT) methods at test-hole locations and between test holes, as a quick, non-invasive means of identifying the base of the High Plains aquifer.

Prediction of phonon-mediated superconductivity in hole-doped black phosphorus.

Science.gov (United States)

Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

2018-01-10

We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB 2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency [Formula: see text] optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

Prediction of phonon-mediated superconductivity in hole-doped black phosphorus

Science.gov (United States)

Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

2018-01-01

We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency B3g1 optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

Coronal holes and high-speed wind streams

International Nuclear Information System (INIS)

Zirker, J.B.

1977-01-01

Coronal holes low have been identified as Bartel's M regions, i.e., sources of high-speed wind streams that produce recurrent geomagnetic variations. Throughout the Skylab period the polar caps of the Sun were coronal holes, and at lower latitudes the most persistent and recurrent holes were equatorial extensions of the polar caps. The holes rotated 'rigidly' at the equatorial synodic rate. They formed in regions of unipolar photospheric magnetic field, and their internal magnetic fields diverged rapidly with increasing distance from the sun. The geometry of the magnetic field in the inner corona seems to control both the physical properties of the holes and the global distribution of high-speed wind streams in the heliosphere. The latitude variation of the divergence of the coronal magnetic field lines produces corresponding variations in wind speed.During the years of declining solar activity the global field of the corona approximates a perturbed dipole. The divergence of field lines in each hemisphere produces a high-speed wind near the poles and low-speed wind in a narrow belt that coincides with the magnetic neutral sheet. The analysis of electron density measurements within a polar hole indicates that solar wind is accelerated principally in the region between 2 and 5 R/sub s/ and that mechanical wave pressure (possibly Alfven wave) may be responsible for the accleration of the wind. Phenomenological models for the birth and decay of coronal holes have been proposed. Attempts to explain the birth and rigid rotation of holes through dynamo action have been only partially successful. The 11-year variation of cosmic ray intensities at the earth may result from cyclic variation of open field regions associated with coronal holes

Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

Science.gov (United States)

Wang, Ying; Gao, Peng; Sha, Linna; Chi, Qianqian; Yang, Lei; Zhang, Jianjiao; Chen, Yujin; Zhang, Milin

2018-04-01

The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ({{{{O}}}2}- and O - ) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.

Electronic technology

International Nuclear Information System (INIS)

Kim, Jin Su

2010-07-01

This book is composed of five chapters, which introduces electronic technology about understanding of electronic, electronic component, radio, electronic application, communication technology, semiconductor on its basic, free electron and hole, intrinsic semiconductor and semiconductor element, Diode such as PN junction diode, characteristic of junction diode, rectifier circuit and smoothing circuit, transistor on structure of transistor, characteristic of transistor and common emitter circuit, electronic application about electronic equipment, communication technology and education, robot technology and high electronic technology.

Observable Emission Features of Black Hole GRMHD Jets on Event Horizon Scales

Energy Technology Data Exchange (ETDEWEB)

Pu, Hung-Yi [Perimeter Institute for Theoretical Physics, 31 Caroline Street North, Waterloo, ON, N2L 2Y5 (Canada); Wu, Kinwah [Mullard Space Science Laboratory, University College London, Holmbury St. Mary, Dorking, Surrey, RH5 6NT (United Kingdom); Younsi, Ziri; Mizuno, Yosuke [Institut für Theoretische Physik, Max-von-Laue-Straße 1, D-60438 Frankfurt am Main (Germany); Asada, Keiichi; Nakamura, Masanori, E-mail: hpu@perimeterinstitute.ca, E-mail: asada@asiaa.sinica.edu.tw, E-mail: nakamura@asiaa.sinica.edu.tw, E-mail: kinwah.wu@ucl.ac.uk, E-mail: younsi@th.physik.uni-frankfurt.de, E-mail: mizuno@th.physik.uni-frankfurt.de [Institute of Astronomy and Astrophysics, Academia Sinica, 11F of Astronomy-Mathematics Building, AS/NTU No. 1, Taipei 10617, Taiwan (China)

2017-08-20

The general-relativistic magnetohydrodynamical (GRMHD) formulation for black hole-powered jets naturally gives rise to a stagnation surface, where inflows and outflows along magnetic field lines that thread the black hole event horizon originate. We derive a conservative formulation for the transport of energetic electrons, which are initially injected at the stagnation surface and subsequently transported along flow streamlines. With this formulation the energy spectra evolution of the electrons along the flow in the presence of radiative and adiabatic cooling is determined. For flows regulated by synchrotron radiative losses and adiabatic cooling, the effective radio emission region is found to be finite, and geometrically it is more extended along the jet central axis. Moreover, the emission from regions adjacent to the stagnation surface is expected to be the most luminous as this is where the freshly injected energetic electrons are concentrated. An observable stagnation surface is thus a strong prediction of the GRMHD jet model with the prescribed non-thermal electron injection. Future millimeter/submillimeter (mm/sub-mm) very-long-baseline interferometric observations of supermassive black hole candidates, such as the one at the center of M87, can verify this GRMHD jet model and its associated non-thermal electron injection mechanism.

Landau quantization effects on hole-acoustic instability in semiconductor plasmas

Science.gov (United States)

Sumera, P.; Rasheed, A.; Jamil, M.; Siddique, M.; Areeb, F.

2017-12-01

The growth rate of the hole acoustic waves (HAWs) exciting in magnetized semiconductor quantum plasma pumped by the electron beam has been investigated. The instability of the waves contains quantum effects including the exchange and correlation potential, Bohm potential, Fermi-degenerate pressure, and the magnetic quantization of semiconductor plasma species. The effects of various plasma parameters, which include relative concentration of plasma particles, beam electron temperature, beam speed, plasma temperature (temperature of electrons/holes), and Landau electron orbital magnetic quantization parameter η, on the growth rate of HAWs, have been discussed. The numerical study of our model of acoustic waves has been applied, as an example, to the GaAs semiconductor exposed to electron beam in the magnetic field environment. An increment in either the concentration of the semiconductor electrons or the speed of beam electrons, in the presence of magnetic quantization of fermion orbital motion, enhances remarkably the growth rate of the HAWs. Although the growth rate of the waves reduces with a rise in the thermal temperature of plasma species, at a particular temperature, we receive a higher instability due to the contribution of magnetic quantization of fermions to it.

A One-Electron Approximation to Domain Averaged Fermi hole Analysis

Czech Academy of Sciences Publication Activity Database

Cooper, D.L.; Ponec, Robert

2008-01-01

Roč. 10, č. 9 (2008), s. 1319-1329 ISSN 1463-9076 R&D Projects: GA AV ČR(CZ) IAA4072403 Institutional research plan: CEZ:AV0Z40720504 Keywords : domain-averaged fermi hole * comparisons Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.064, year: 2008

Efficient Long-Range Hole Transport Through G-Quadruplexes.

Science.gov (United States)

Wu, Jingyuan; Meng, Zhenyu; Lu, Yunpeng; Shao, Fangwei

2017-10-09

DNA offers a means of long-range charge transport for biology and electric nanodevices. Here, a series of tetra-stranded G-quadruplexes were assembled within a dendritic DNA architecture to explore oxidative charge transport (hole transport) through the G-quadruplex. Efficient charge transport was achieved over 28 Å upon UV irradiation. Over a longer G-quadruplex bridge, hole transport was escalated to a higher efficiency, which resulted in a higher yield than that of the optimal duplex DNA for charge transport, that is, the adenine tract. Efficient long-range hole transport suggests tetra-stranded G-quadruplexes, instead of an oxidation hotspot, hold better potential as an electron conduit than duplex DNA. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Massive-spin-1/2 wave around a Kerr-Newman black hole

International Nuclear Information System (INIS)

Lee, C.H.

1977-01-01

Using the separation of variables of the Dirac equations for the electron in the Kerr-Newman geometry, it is explicitly shown that the super-radiant scattering is not allowed for the electron wave on a Kerr-Newman black hole

Stability of trapped electrons in SiO2

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Flament, O.; Leray, J.L.

1998-01-01

Electron trapping near the Si/SiO 2 interface plays a crucial role in mitigating the response of MOS devices to ionizing radiation or high-field stress. These electrons offset positive charge due to trapped holes, and can be present at densities exceeding 10 12 cm -2 in the presence of a similar density of trapped positive charge. The nature of the defects that serve as hosts for trapped electrons in the near-interfacial SiO 2 is presently unknown, although there is compelling evidence that these defects are often intimately associated with trapped holes. This association is depicted most directly in the model of Lelis et al., which suggests that trapped electrons and holes occupy opposite sides of a compensated E center in SiO 2 . Charge exchange between electron traps and the Si can occur over a wide range of time scales, depending on the trap depth and location relative to the Si/SiO 2 interface. Here the authors report a detailed study of the stability of electron traps associated with trapped holes near the Si/SiO 2 interface

Spectral and spatial resolving of photoelectric property of femtosecond laser drilled holes of GaSb(1-x)Bi(x).

Science.gov (United States)

Pan, C B; Zha, F X; Song, Y X; Shao, J; Dai, Y; Chen, X R; Ye, J Y; Wang, S M

2015-07-15

Femtosecond laser drilled holes of GaSbBi were characterized by the joint measurements of photoconductivity (PC) spectroscopy and laser-beam-induced current (LBIC) mapping. The excitation light in PC was focused down to 60 μm presenting the spectral information of local electronic property of individual holes. A redshift of energy band edge of about 6-8 meV was observed by the PC measurement when the excitation light irradiated on the laser drilled holes. The spatial resolving of photoelectric property was achieved by the LBIC mapping which shows "pseudo-holes" with much larger dimensions than the geometric sizes of the holes. The reduced LBIC current with the pseudo-holes is associated with the redshift effect indicating that the electronic property of the rim areas of the holes is modified by the femtosecond laser drilling.

Above-cutoff impedance measurements of pumping holes for the Collider Liner

International Nuclear Information System (INIS)

Walling, L.; Barts, T.; Ruiz, E.; Turner, W.; Spayd, N.

1994-04-01

A holed liner was considered for the Superconducting Super Collider (SSC) Collider Ring because of vacuum problems caused by photon-induced desorption. The liner would serve to shield the cold surface of the beam tube from the synchrotron radiation and the holes (or slots) would allow distributed pumping by gas-absorption material that could be placed between the liner and the beam tube. The impedance of holes and slots in a liner were studied by means of simulations using both MAFIA and HFSS, analytical modelling, wire measurements and electron beam measurements

Reactivating Catalytic Surface: Insights into the Role of Hot Holes in Plasmonic Catalysis.

Science.gov (United States)

Peng, Tianhuan; Miao, Junjian; Gao, Zhaoshuai; Zhang, Linjuan; Gao, Yi; Fan, Chunhai; Li, Di

2018-03-01

Surface plasmon resonance of coinage metal nanoparticles is extensively exploited to promote catalytic reactions via harvesting solar energy. Previous efforts on elucidating the mechanisms of enhanced catalysis are devoted to hot electron-induced photothermal conversion and direct charge transfer to the adsorbed reactants. However, little attention is paid to roles of hot holes that are generated concomitantly with hot electrons. In this work, 13 nm spherical Au nanoparticles with small absorption cross-section are employed to catalyze a well-studied glucose oxidation reaction. Density functional theory calculation and X-ray absorption spectrum analysis reveal that hot holes energetically favor transferring catalytic intermediates to product molecules and then desorbing from the surface of plasmonic catalysts, resulting in the recovery of their catalytic activities. The studies shed new light on the use of the synergy of hot holes and hot electrons for plasmon-promoted catalysis. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron-stimulated desorption from condensed branched alkanes

International Nuclear Information System (INIS)

Kelber, J.A.; Knotek, M.L.

1982-01-01

Desorption of H + , CH 3+ , H 2+ , and D + have been measured as a function of electron excitation energy for solid neopentane, tetramethylsilane and two deuterated isomers of isobutane. The evidence shows that C-C (or Si-C) and C-H bonds are broken by electronic excitations localized on methyl groups, in contrast to CH 3+ production in gas-phase neopentane, and that these excitations are the final states of decay processes initiated by creation of a hole in the C2s level, or, in tetramethylsilane, the C2s/Si3s level. This is in accord with other evidence which shows that localized multi-valence hole states result in C-H, C-C, Si-C and Si-H dissociation, and that such states may be excited either directly or by shakeup, by decay from a C2s hole, or by decay for a C1s core hole. It is apparent then, that dissociation and desorption of ions from covalent materials is a multi (electron) hole mechanism, and that the means of localizing the excitation energy in such systems involves multi-hole correlation

GUIDELINES FOR EVALUATION OF PSYCHOLOGICAL AND PEDAGOGICAL QUALITY CHARACTERISTICS OF ELECTRONIC EDUCATIONAL RESOURCES

Directory of Open Access Journals (Sweden)

Galina P. Lavrentieva

2014-05-01

Full Text Available The article highlights the causes of insufficient effective use of electronic learning resources and sets out the guidelines on ways to solve the aforementioned problems. The set of didactic, methodical, psychological, pedagogical, design and ergonomic quality requirements is considered for evaluation, selection and application of information and communication technologies in the educational process. The most appropriate mechanisms for the ICT introduction into the learning process are disclosed as it should meet the specific learning needs of the student and the objectives of the educational process. The guidance for psycho-educational assessment of quality of electronic educational resources is provided. It is argued that the effectiveness of the ICT use is to be improved by means of quality evaluation mechanisms involved into the educational process.

Black hole astrophysics

International Nuclear Information System (INIS)

Blandford, R.D.; Thorne, K.S.

1979-01-01

Following an introductory section, the subject is discussed under the headings: on the character of research in black hole astrophysics; isolated holes produced by collapse of normal stars; black holes in binary systems; black holes in globular clusters; black holes in quasars and active galactic nuclei; primordial black holes; concluding remarks on the present state of research in black hole astrophysics. (U.K.)

A hole modulator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Ion Feedback Suppression Using Inclined MCP Holes in a Single-MCP+Micromegas+Pads Detector

International Nuclear Information System (INIS)

Va'vra, J.; Sumiyoshi, T.

2005-01-01

We show that the ion backflow to photocathode can be completely suppressed if one uses inclined MCP holes in a presence of magnetic field. The inclined hole angles are chosen to be aligned with the Lorentz electron angle allowing the electron transmission and amplification, while positive ions, traveling along a different angle, are caught on the MCP hole walls. The detector under investigation is a new gaseous detector structure based on a tandem of two parts, a single MCP (Microchannel) plate, a Micromegas with pad readout. We are aiming to develop a gaseous photon detector with the Bialkali photocathode, however, one could use some ideas in the paper for other types of detectors

Ion feedback suppression using inclined MCP holes in a 'single-MCP+micromegas+pads' detector

International Nuclear Information System (INIS)

Va'vra, J.; Sumiyoshi, T.

2005-01-01

We show that the ion backflow to photocathode can be completely suppressed if one uses inclined MCP holes in the presence of a magnetic field. The inclined hole angles are chosen to be aligned with the Lorentz electron angle allowing the electron transmission and amplification, while positive ions, traveling along a different angle, are caught on the MCP hole walls. The detector under investigation is a new gaseous detector structure based on a tandem of two parts, a single MCP (microchannel plate), a micromegas with pad readout. We are aiming to develop a gaseous photon detector with the Bialkali photocathode, however, one could use some ideas in the paper for other types of detectors

Availability, Use and Constraints to Use of Electronic Information Resources by Postgraduates Students at the University of Ibadan

Directory of Open Access Journals (Sweden)

Dare Samuel Adeleke

2017-12-01

Full Text Available Availability, awareness and use of electronic resources provide access to authoritative, reliable, accurate and timely access to information. The use of electronic information resources (EIRs can enable innovation in teaching and increase timeliness in research of postgraduate students which will eventual result into encouragement of the expected research-led enquiry in this digital age. The study adopted a descriptive survey design. Samples of 300 of postgraduate students within seven out 13 Faculties were randomly selected. Data were collected using questionnaire designed to elicit response from respondents and data were analyzed using descriptive statistics methods percentages, mean, and standard deviation. Results indicated that internet was ranked most available and used in the university. Low level of usage of electronic resources, in particular, full texts data bases is linked to a number of constraints: Interrupted power supply was ranked highest among other factors as speed and capacity of computers, retrieval of records with high recall and low precision, retrieving records relevant to information need, lack of knowledge of search techniques to retrieve information effectively, non possession of requisite IT skills and problems accessing the internet. The study recommended that usage of electronic resources be made compulsory, intensifying awareness campaigns concerning the availability, training on use of electronic resources and the problem of power outage be addressed.

A Study on Developing Evaluation Criteria for Electronic Resources in Evaluation Indicators of Libraries

Science.gov (United States)

Noh, Younghee

2010-01-01

This study aimed to improve the current state of electronic resource evaluation in libraries. While the use of Web DB, e-book, e-journal, and other e-resources such as CD-ROM, DVD, and micro materials is increasing in libraries, their use is not comprehensively factored into the general evaluation of libraries and may diminish the reliability of…

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

Science.gov (United States)

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

Bogoliubov Angle, Particle-Hole Mixture and Angular Resolved Photoemission Spectroscopy in Superconductors

Energy Technology Data Exchange (ETDEWEB)

Balatsky, A.

2010-05-04

Superconducting excitations - Bogoliubov quasiparticles - are the quantum mechanical mixture of negatively charged electron (-e) and positively charged hole (+e). We propose a new observable for Angular Resolved Photoemission Spectroscopy (ARPES) studies that is the manifestation of the particle-hole entanglement of the superconducting quasiparticles. We call this observable a Bogoliubov angle. This angle measures the relative weight of particle and hole amplitude in the superconducting (Bogoliubov) quasiparticle. We show how this quantity can be measured by comparing the ratio of spectral intensities at positive and negative energies.

SHORT-PULSE ELECTROMAGNETIC TRANSPONDER FOR HOLE-TO-HOLE USE.

Science.gov (United States)

Wright, David L.; Watts, Raymond D.; Bramsoe, Erik

1983-01-01

Hole-to-hole observations were made through nearly 20 m of granite using an electromagnetic transponder (an active reflector) in one borehole and a single-hole short-pulse radar in another. The transponder is inexpensive, operationally simple, and effective in extending the capability of a short-pulse borehole radar system to allow hole-to-hole operation without requiring timing cables. A detector in the transponder senses the arrival of each pulse from the radar. Each pulse detection triggers a kilovolt-amplitude pulse for retransmission. The transponder 'echo' may be stronger than that of a passive reflector by a factor of as much as 120 db. The result is an increase in range capability by a factor which depends on attenuation in the medium and hole-to-hole wavepath geometry.

Black holes

OpenAIRE

Brügmann, B.; Ghez, A. M.; Greiner, J.

2001-01-01

Recent progress in black hole research is illustrated by three examples. We discuss the observational challenges that were met to show that a supermassive black hole exists at the center of our galaxy. Stellar-size black holes have been studied in x-ray binaries and microquasars. Finally, numerical simulations have become possible for the merger of black hole binaries.

The nature of holes in carbon doped titania

International Nuclear Information System (INIS)

Rabani, J.

2009-01-01

Complete text of publication follows. It is well known that semiconductors (SC) produce conduction band electrons and valence band holes upon band gap excitation. The mobile species become quickly trapped at the surface. The most popular semiconductor is titanium dioxide, where the reactive surface holes (h T + ) have been recently identified as surface -O ·- (or - · OH depending on pH) covalently linked to Ti atoms. Most organic compounds are oxidized by the holes. These holes react similarly to · OH radicals and hence there is some resemblance between the photochemistry of TiO 2 and radiolysis, although in the case of TiO 2 the reactions take place on the surface. Titanium dioxide has many favorable properties for application as a photocatalyst for decontamination of water from organic materials, but is lacking absorption in the visible range, where photons are relatively cheap. In addition the quantum yield of reaction with solutes in water is too low under conditions required by industrial water treatment due to the competition between electron-hole recombination and localization at the surface. The discovery that doping of TiO 2 leads to extension of the photoactive region from UV to visible light has remarkably increased the interest in such doped TiO 2 , and a large number of materials have been developed on the basis of this strategy. We'll focus on carbon doped TiO 2 where the visible photoactivity is attributed to introduction of intragap localized carbon states or organic segments. Visible photolysis of aerated carbon doped TiO 2 (C-TiO 2 ) aqueous suspensions induces oxidation of the model compound used, namely methanol. The effects of absorbed light density, added hydrogen peroxide and added catalase on the rate of HCHO formation have been studied. The mechanism has been shown to involve oxidation of CH 3 OH by surface trapped holes, although these holes have lower energy than those formed upon UV photolysis of undoped TiO 2 . The C-TiO 2 electrons

Charge transport in organic molecular semiconductors from first principles: The bandlike hole mobility in a naphthalene crystal

Science.gov (United States)

Lee, Nien-En; Zhou, Jin-Jian; Agapito, Luis A.; Bernardi, Marco

2018-03-01

Predicting charge transport in organic molecular crystals is notoriously challenging. Carrier mobility calculations in organic semiconductors are dominated by quantum chemistry methods based on charge hopping, which are laborious and only moderately accurate. We compute from first principles the electron-phonon scattering and the phonon-limited hole mobility of naphthalene crystal in the framework of ab initio band theory. Our calculations combine GW electronic bandstructures, ab initio electron-phonon scattering, and the Boltzmann transport equation. The calculated hole mobility is in very good agreement with experiment between 100 -300 K , and we can predict its temperature dependence with high accuracy. We show that scattering between intermolecular phonons and holes regulates the mobility, though intramolecular phonons possess the strongest coupling with holes. We revisit the common belief that only rigid molecular motions affect carrier dynamics in organic molecular crystals. Our paper provides a quantitative and rigorous framework to compute charge transport in organic crystals and is a first step toward reconciling band theory and carrier hopping computational methods.

THE MODEL OF LINGUISTIC TEACHERS’ COMPETENCY DEVELOPMENT ON DESIGNING MULTIMEDIA ELECTRONIC EDUCATIONAL RESOURCES IN THE MOODLE SYSTEM

OpenAIRE

Anton M. Avramchuk

2017-01-01

The article is devoted to the problem of developing the competency of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system. The concept of "the competence of teachers of language disciplines on designing multimedia electronic educational resources in the Moodle system" is justified and defined. Identified and characterized the components by which the levels of the competency development of teachers of language disciplines on designing ...

National Uranium Resource Evaluation: intermediate-grade uranium resource assessment project for part of the Maybell District, Sand Wash Basin, Colorado

International Nuclear Information System (INIS)

Goodknight, C.S.

1983-04-01

Intermediate-grade uranium resources in the Miocene Browns Park Formation were assessed for part of the Maybell district in the Sand Wash Basin, Colorado, as part of the National Uranium Resource Evaluation program conducted by Bendix Field Engineering Corporation for the US Department of Energy. Two sites, each 2 mi 2 (5 km 2 ) in size, in the district were selected to be assessed. Site selection was based on evaluation of geologic, geophysical, and geochemical data that were collected from a larger project area known to contain uranium enrichment. The assessment of the sites was accomplished primarily by drilling 19 holes through the Browns Park Formation and by using the geophysical and geochemical data from those holes and from a larger number of industry-drilled holes. Analytical results of samples from uranium prospects, mainly along faults in the sites, were also used for the assessment. Data from surface samples and from drill-hole samples and logs of the site south of Lay Creek indicate that no intermediate-grade uranium resources are present. However, similar data from the site north of Lay Creek verify that approximately 25 million lb (11.2 million kg) of intermediate-grade uranium resources may be present. This assessment assumes that an average uranium-enriched thickness of 10 ft (3 m) at a grade of 0.017% U 3 O 8 is present in at least two thirds of the northern site. Uranium enrichment in this site occurs mainly in the lower 150 ft (45 m) of the Browns Park Formation in fine- to medium-grained sandstone that contains abundant clay in its matrix. Facies variations within the Browns Park preclude correlation of individual beds or zones of uranium enrichment between closely spaced drill holes

Phase separation in fermionic systems with particle–hole asymmetry

International Nuclear Information System (INIS)

Montorsi, Arianna

2008-01-01

We determine the ground-state phase diagram of a Hubbard Hamiltonian with correlated hopping, which is asymmetric under particle–hole transform. By lowering the repulsive Coulomb interaction U at appropriate filling and interaction parameters, the ground state separates into hole and electron conducting phases: two different wavevectors characterize the system and charge–charge correlations become incommensurate. By further decreasing U another transition occurs at which the hole conducting region becomes insulating, and conventional phase separation takes place. Finally, for negative U the whole system eventually becomes a paired insulator. It is speculated that such behavior could be at the origin of the incommensurate superconducting phase recently discovered in the 1D Hirsch model. The exact phase boundaries are calculated in one dimension. (letter)

Hole-vibrational coupling in Pentacene thin films detected by UPS

International Nuclear Information System (INIS)

Yamame, H.; Fukagawa, H.; Honda, H.; Ono, M.; Okudaira, K.K.; Ueno, N.; Kera, S.; Ishii, H.

2004-01-01

Full text:The hole/electron-vibrational coupling plays a crucial rule in the hole/electron transport in organic devices. In this work, fine structure of the highest occupied molecular orbital (HOMO) band in oriented thin films of pentacene on graphite (HOPG) was studied by using high-resolution ultraviolet photoelectron spectroscopy (UPS). Figure 1 shows the comparison of UPS spectra between pentacene thin films (circles) and gas-phase pentacene (dashed line). We observed a very sharp HOMO band, which consists of at least three components, as observed for Cu-phthalocyanine monolayer on HOPG. It is of note that the relative intensities of fine structures are different between the condensed phase and gas phase, while their energy separations are the same for the two phases (∼ 0.17 eV / 1400 cm -1 ). Furthermore, the relative intensity of fine structures showed remarkable dependence on photoelectron-take-off angle. Judging from these results, the observed fine structures in UPS originate from the hole-vibrational (molecular C-C stretching) coupling in pentacene thin films. At the conference, temperature and thickness dependences of UPS will be discussed

Determining the level of awareness of the physicians in using the variety of electronic information resources and the effecting factors.

Science.gov (United States)

Papi, Ahmad; Ghazavi, Roghayeh; Moradi, Salimeh

2015-01-01

Understanding of the medical society's from the types of information resources for quick and easy access to information is an imperative task in medical researches and management of the treatment. The present study was aimed to determine the level of awareness of the physicians in using various electronic information resources and the factors affecting it. This study was a descriptive survey. The data collection tool was a researcher-made questionnaire. The study population included all the physicians and specialty physicians of the teaching hospitals affiliated to Isfahan University of Medical Sciences and numbered 350. The sample size based on Morgan's formula was set at 180. The content validity of the tool was confirmed by the library and information professionals and the reliability was 95%. Descriptive statistics were used including the SPSS software version 19. On reviewing the need of the physicians to obtain the information on several occasions, the need for information in conducting the researches was reported by the maximum number of physicians (91.9%) and the usage of information resources, especially the electronic resources, formed 65.4% as the highest rate with regard to meeting the information needs of the physicians. Among the electronic information databases, the maximum awareness was related to Medline with 86.5%. Among the various electronic information resources, the highest awareness (43.3%) was related to the E-journals. The highest usage (36%) was also from the same source. The studied physicians considered the most effective deterrent in the use of electronic information resources as being too busy and lack of time. Despite the importance of electronic information resources for the physician's community, there was no comprehensive knowledge of these resources. This can lead to less usage of these resources. Therefore, careful planning is necessary in the hospital libraries in order to introduce the facilities and full capabilities of the

Ghost Remains After Black Hole Eruption

Science.gov (United States)

2009-05-01

NASA's Chandra X-ray Observatory has found a cosmic "ghost" lurking around a distant supermassive black hole. This is the first detection of such a high-energy apparition, and scientists think it is evidence of a huge eruption produced by the black hole. This discovery presents astronomers with a valuable opportunity to observe phenomena that occurred when the Universe was very young. The X-ray ghost, so-called because a diffuse X-ray source has remained after other radiation from the outburst has died away, is in the Chandra Deep Field-North, one of the deepest X-ray images ever taken. The source, a.k.a. HDF 130, is over 10 billion light years away and existed at a time 3 billion years after the Big Bang, when galaxies and black holes were forming at a high rate. "We'd seen this fuzzy object a few years ago, but didn't realize until now that we were seeing a ghost", said Andy Fabian of the Cambridge University in the United Kingdom. "It's not out there to haunt us, rather it's telling us something - in this case what was happening in this galaxy billions of year ago." Fabian and colleagues think the X-ray glow from HDF 130 is evidence for a powerful outburst from its central black hole in the form of jets of energetic particles traveling at almost the speed of light. When the eruption was ongoing, it produced prodigious amounts of radio and X-radiation, but after several million years, the radio signal faded from view as the electrons radiated away their energy. HDF 130 Chandra X-ray Image of HDF 130 However, less energetic electrons can still produce X-rays by interacting with the pervasive sea of photons remaining from the Big Bang - the cosmic background radiation. Collisions between these electrons and the background photons can impart enough energy to the photons to boost them into the X-ray energy band. This process produces an extended X-ray source that lasts for another 30 million years or so. "This ghost tells us about the black hole's eruption long after

Managing Selection for Electronic Resources: Kent State University Develops a New System to Automate Selection

Science.gov (United States)

Downey, Kay

2012-01-01

Kent State University has developed a centralized system that manages the communication and work related to the review and selection of commercially available electronic resources. It is an automated system that tracks the review process, provides selectors with price and trial information, and compiles reviewers' feedback about the resource. It…

A hole modulator for InGaN/GaN light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-01-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm 2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs

From Quarks to Black Holes Interviewing the Universe

CERN Document Server

Hammond, Richard T

2001-01-01

This book presents a series of delightful interviews in which natural objects such as an electron, a black hole, a galaxy, and even the vacuum itself, reveal their innermost secrets - not only what they are but also how they feel. A hydrogen atom tells us about quantum mechanics and why we live in a non-deterministic world; a black hole explains curved space and naked singularities; and a uranium atom talks of its life on a meteor, its tremendous collision with Earth, and properties of radioactivity - all while grappling with its own mortality. A neutron star gives a personal account of its cr

Neutrino constraints that transform black holes into grey holes

International Nuclear Information System (INIS)

Ruderfer, M.

1982-01-01

Existing black hole theory is found to be defective in its neglect of the physical properties of matter and radiation at superhigh densities. Nongravitational neutrino effects are shown to be physically relevant to the evolution of astronomical black holes and their equations of state. Gravitational collapse to supernovae combined with the Davis and Ray vacuum solution for neutrinos limit attainment of a singularity and require black holes to evolve into ''grey holes''. These allow a better justification than do black holes for explaining the unique existence of galactic masses. (Auth.)

SU-F-T-318: Sensitivity and Stability of OSLDs with Filled Deep Electron/hole Traps Under Pre-Irradiation and Bleaching Conditions

International Nuclear Information System (INIS)

Kim, J; Park, S; Lee, H; Kim, H; Choi, C; Park, J

2016-01-01

Purpose: This work evaluated the characteristics of optically stimulated luminescence dosimeters (OSLDs) with fully filled deep electron/hole traps (OSLDfull) with the bleaching conditions according to the accumulated dose. Methods: The OSLDs were first pre-irradiated with a Co-60 gamma ray at more than 5 kGy, so as to fill the deep electron and hole traps. Using a 6-MV beam, the OSLDfull characteristics were investigated in terms of the full bleaching, fading, dose linearity, and dose sensitivity obtained in response to the accumulated dose values. To facilitate a comparison of the dose sensitivity, OSLDs with un-filled deep electron/hole traps (OSLDempty) were investigated in the same manner. A long-pass filter was used to exclude bleaching-source wavelengths of less than 520 nm. Various bleaching time and wavelength combinations were used in order to determine the optimal bleaching conditions for the OSLD full. Results: The fading for the OSLDfull exhibited stable signals after 8 min, for both 1- and 10-Gy. For 4-h bleaching time and an unfiltered bleaching device, the supralinear index values for the OSLDfull were 1.003, 1.002, 0.999, and 1.001 for doses of 2, 4, 7, and 10 Gy, respectively. For a 65-Gy accumulated dose with a 5-Gy fraction, no variation in dose sensitivity was obtained for the OSLDfull, within a standard deviation of 0.85%, whereas the OSLDempty dose sensitivity decreased by approximately 2.3% per 10 Gy. The filtered bleaching device yielded a highly stable sensitivity for OSLDfull, independent of bleaching time and within a standard deviation of 0.71%, whereas the OSLDempty dose sensitivity decreased by approximately 4.2% per 10 Gy for an accumulated dose of 25 Gy with a 5-Gy fraction. Conclusion: Under the bleaching conditions determined in this study, clinical dosimetry with OSLDfull is highly stable, having an accuracy of 1% with no change in dose sensitivity or linearity at clinical doses. This work was supported by a National Research

Electronic Structure of Low-Dimensional Carbon Π-Systems

DEFF Research Database (Denmark)

García Lastra, Juan Maria; Boukahil, Idris; Qiao, Ruimin

2016-01-01

, and the electron hole interaction. For the latter, we develop a simple model that accurately represents a full Delta-self-consistent field (ΔSCF) calculation. The distortion of the LUMO because of its interaction with the C is hole is investigated. These results illustrate the electronic states of prototypical Π...

End-of-life resource recovery from emerging electronic products

DEFF Research Database (Denmark)

Parajuly, Keshav; Habib, Komal; Cimpan, Ciprian

2016-01-01

Integrating product design with appropriate end-of-life (EoL) processing is widely recognized to have huge potentials in improving resource recovery from electronic products. In this study, we investigate both the product characteristics and EoL processing of robotic vacuum cleaner (RVC), as a case...... of emerging electronic product, in order to understand the recovery fate of different materials and its linkage to product design. Ten different brands of RVC were dismantled and their material composition and design profiles were studied. Another 125 RVCs (349 kg) were used for an experimental trial...... at a conventional ‘shred-and-separate’ type preprocessing plant in Denmark. A detailed material flow analysis was performed throughout the recycling chain. The results show a mismatch between product design and EoL processing, and the lack of practical implementation of ‘Design for EoL’ thinking. In the best...

Double carriers pulse DLTS for the characterization of electron-hole recombination process in GaAsN grown by chemical beam epitaxy

International Nuclear Information System (INIS)

Bouzazi, Boussairi; Suzuki, Hidetoshi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2011-01-01

A nitrogen-related electron trap (E1), located approximately 0.33 eV from the conduction band minimum of GaAsN grown by chemical beam epitaxy, was confirmed by investigating the dependence of its density with N concentration. This level exhibits a high capture cross section compared with that of native defects in GaAs. Its density increases significantly with N concentration, persists following post-thermal annealing, and was found to be quasi-uniformly distributed. These results indicate that E1 is a stable defect that is formed during growth to compensate for the tensile strain caused by N. Furthermore, E1 was confirmed to act as a recombination center by comparing its activation energy with that of the recombination current in the depletion region of the alloy. However, this technique cannot characterize the electron-hole (e-h) recombination process. For that, double carrier pulse deep level transient spectroscopy is used to confirm the non-radiative e-h recombination process through E1, to estimate the capture cross section of holes, and to evaluate the energy of multi-phonon emission. Furthermore, a configuration coordinate diagram is modeled based on the physical parameters of E1. -- Research Highlights: → Double carrier pulse DLTS method confirms the existence of SRH center. → The recombination center in GaAsN depends on nitrogen concentration. → Minority carrier lifetime in GaAsN is less than 1 ns. → A non-radiative recombination center exits in GaAsN.

Use of electronic sales data to tailor nutrition education resources for an ethnically diverse population.

Science.gov (United States)

Eyles, H; Rodgers, A; Ni Mhurchu, C

2010-02-01

Nutrition education may be most effective when personally tailored. Individualised electronic supermarket sales data offer opportunities to tailor nutrition education using shopper's usual food purchases. The present study aimed to use individualised electronic supermarket sales data to tailor nutrition resources for an ethnically diverse population in a large supermarket intervention trial in New Zealand. Culturally appropriate nutrition education resources (i.e. messages and shopping lists) were developed with the target population (through two sets of focus groups) and ethnic researchers. A nutrient database of supermarket products was developed using retrospective sales data and linked to participant sales to allow tailoring by usual food purchases. Modified Heart Foundation Tick criteria were used to identify 'healthier' products in the database suitable for promotion in the resources. Rules were developed to create a monthly report listing the tailored and culturally targeted messages to be sent to each participant, and to produce automated, tailored shopping lists. Culturally targeted nutrition messages (n = 864) and shopping lists (n = 3 formats) were developed. The food and nutrient database (n = 3000 top-selling products) was created using 12 months of retrospective sales data, and comprised 60%'healthier' products. Three months of baseline sales data were used to determine usual food purchases. Tailored resources were successfully mailed to 123 Māori, 52 Pacific and 346 non-Māori non-Pacific participants over the 6-month trial intervention period. Electronic supermarket sales data can be used to tailor nutrition education resources for a large number of ethnically diverse supermarket shoppers.

Hole states in diamond p-delta-doped field effect transistors

International Nuclear Information System (INIS)

Martinez-Orozco, J C; Rodriguez-Vargas, I; Mora-Ramos, M E

2009-01-01

The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

Hole states in diamond p-delta-doped field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Martinez-Orozco, J C; Rodriguez-Vargas, I [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina con Paseo la Bufa S/N, CP 98060 Zacatecas, ZAC. (Mexico); Mora-Ramos, M E, E-mail: jcmover@correo.unam.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, CP 62209 Cuernavaca, MOR. (Mexico)

2009-05-01

The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

Jets, black holes and disks in blazars

Directory of Open Access Journals (Sweden)

Ghisellini Gabriele

2013-12-01

Full Text Available The Fermi and Swift satellites, together with ground based Cherenkov telescopes, has greatly improved our knowledge of blazars, namely Flat Spectrum Radio Quasars and BL Lac objects, since all but the most powerful emit most of their electro–magnetic output at γ–ray energies, while the very powerful blazars emit mostly in the hard X–ray region of the spectrum. Often they show coordinated variability at different frequencies, suggesting that in these cases the same population of electrons is at work, in a single zone of the jet. The location of this region along the jet is a matter of debate. The jet power correlates with the mass accretion rate, with jets existing at all values of disk luminosities, measured in Eddington units, sampled so far. The most powerful blazars show clear evidence of the emission from their disks, and this has revived methods of finding the black hole mass and accretion rate by modelling a disk spectrum to the data. Being so luminous, blazars can be detected also at very high redshift, and therefore are a useful tool to explore the far universe. One interesting line of research concerns how heavy are their black holes at high redshifts. If we associate the presence of a relativistic jets with a fastly spinning black hole, then we naively expect that the accretion efficiency is larger than for non–spinning holes. As a consequence, the black hole mass in jetted systems should grow at a slower rate. In turn, this would imply that, at high redshifts, the heaviest black holes should be in radio–quiet quasars. We instead have evidences of the opposite, challenging our simple ideas of how a black hole grows.

Localized holes and delocalized electrons in photoexcited inorganic perovskites: Watching each atomic actor by picosecond X-ray absorption spectroscopy

Directory of Open Access Journals (Sweden)

Fabio G. Santomauro

2017-07-01

Full Text Available We report on an element-selective study of the fate of charge carriers in photoexcited inorganic CsPbBr3 and CsPb(ClBr3 perovskite nanocrystals in toluene solutions using time-resolved X-ray absorption spectroscopy with 80 ps time resolution. Probing the Br K-edge, the Pb L3-edge, and the Cs L2-edge, we find that holes in the valence band are localized at Br atoms, forming small polarons, while electrons appear as delocalized in the conduction band. No signature of either electronic or structural changes is observed at the Cs L2-edge. The results at the Br and Pb edges suggest the existence of a weakly localized exciton, while the absence of signatures at the Cs edge indicates that the Cs+ cation plays no role in the charge transport, at least beyond 80 ps. This first, time-resolved element-specific study of perovskites helps understand the rather modest charge carrier mobilities in these materials.

Easily doped p-type, low hole effective mass, transparent oxides

Science.gov (United States)

Sarmadian, Nasrin; Saniz, Rolando; Partoens, Bart; Lamoen, Dirk

2016-02-01

Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications - i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe.

Monte-Carlo simulations of geminate electron-hole pair dissociation in a molecular heterojunction: a two-step dissociation mechanism

International Nuclear Information System (INIS)

Offermans, Ton; Meskers, Stefan C.J.; Janssen, Rene A.J.

2005-01-01

The Monte-Carlo simulations are used to investigate the dissociation of a Coulomb correlated charge pair at an idealized interface between an electron accepting and an electron donating molecular material. In the simulations the materials are represented by cubic lattices of sites, with site the energies spread according to Gaussian distributions. The influence of temperature, applied external fields, and the width of the Gaussian densities of states distribution for both the electron and the hole transporting material are investigated. The results show that the dissociation of geminate charge pairs is assisted by disorder and the results can be understood in terms of a two-step model. In the first step, the slow carrier in the most disordered material jumps away from the interface. In the following, second step, the reduced Coulombic attraction allows the faster carrier in the less disordered material to escape from the interface by thermally activated hopping. When the rate for geminate recombination at the interface is very low ( -1 ) the simulations predict a high yield for carrier collection, as observed experimentally. Comparison of the simulated and experimentally observed temperature dependence of the collection efficiency indicates that at low temperature dissociation of the geminate charge pairs may be one of the factors limiting the device performance

Availability, Level of Use and Constraints to Use of Electronic Resources by Law Lecturers in Public Universities in Nigeria

Science.gov (United States)

Amusa, Oyintola Isiaka; Atinmo, Morayo

2016-01-01

(Purpose) This study surveyed the level of availability, use and constraints to use of electronic resources among law lecturers in Nigeria. (Methodology) Five hundred and fifty-two law lecturers were surveyed and four hundred and forty-two responded. (Results) Data analysis revealed that the level of availability of electronic resources for the…

Graded Heterojunction Engineering for Hole-Conductor-Free Perovskite Solar Cells with High Hole Extraction Efficiency and Conductivity.

Science.gov (United States)

Li, Bo; Zhang, Yanan; Zhang, Luyuan; Yin, Longwei

2017-10-01

Despite great progress in the photovoltaic conversion efficiency (PCE) of inorganic-organic hybrid perovskite solar cells (PSCs), the large-scale application of PSCs still faces serious challenges due to the poor-stability and high-cost of the spiro-OMeTAD hole transport layer (HTL). It is of great fundamental importance to rationally address the issues of hole extraction and transfer arising from HTL-free PSCs. Herein, a brand-new PSC architecture is designed by introducing multigraded-heterojunction (GHJ) inorganic perovskite CsPbBr x I 3- x layers as an efficient HTL. The grade adjustment can be achieved by precisely tuning the halide proportion and distribution in the CsPbBr x I 3- x film to reach an optimal energy alignment of the valance and conduction band between MAPbI 3 and CsPbBr x I 3- x . The CsPbBr x I 3- x GHJ as an efficient HTL can induce an electric field where a valance/conduction band edge is leveraged to bend at the heterojunction interface, boosting the interfacial electron-hole splitting and photoelectron extraction. The GHJ architecture enhances the hole extraction and conduction efficiency from the MAPbI 3 to the counter electrode, decreases the recombination loss during the hole transfer, and benefits in increasing the open-circuit voltage. The optimized HTL-free PCS based on the GHJ architecture demonstrates an outstanding thermal stability and a significantly improved PCE of 11.33%, nearly 40% increase compared with 8.16% for pure HTL-free devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Primary black holes

International Nuclear Information System (INIS)

Novikov, I.; Polnarev, A.

1981-01-01

Proves are searched for of the formation of the so-called primary black holes at the very origin of the universe. The black holes would weigh less than 10 13 kg. The formation of a primary black hole is conditional on strong fluctuations of the gravitational field corresponding roughly to a half of the fluctuation maximally permissible by the general relativity theory. Only big fluctuations of the gravitational field can overcome the forces of the hot gas pressure and compress the originally expanding matter into a black hole. Low-mass black holes have a temperature exceeding that of the black holes formed from stars. A quantum process of particle formation, the so-called evaporation takes place in the strong gravitational field of a black hole. The lower the mass of the black hole, the shorter the evaporation time. The analyses of processes taking place during the evaporation of low-mass primary black holes show that only a very small proportion of the total mass of the matter in the universe could turn into primary black holes. (M.D.)

Weiss oscillations and particle-hole symmetry at the half-filled Landau level

Science.gov (United States)

Cheung, Alfred K. C.; Raghu, S.; Mulligan, Michael

2017-06-01

Particle-hole symmetry in the lowest Landau level of the two-dimensional electron gas requires the electrical Hall conductivity to equal ±e2/2 h at half filling. We study the consequences of weakly broken particle-hole symmetry for magnetoresistance oscillations about half filling in the presence of an applied periodic one-dimensional electrostatic potential using the Dirac composite fermion theory proposed by Son [Son, Phys. Rev. X 5, 031027 (2015), 10.1103/PhysRevX.5.031027]. At fixed electron density, the oscillation minima are asymmetrically biased towards higher magnetic fields, while at fixed magnetic field the oscillations occur symmetrically as the electron density is varied about half filling. We find an approximate "sum rule" obeyed for all pairs of oscillation minima that can be tested in experiment. The locations of the magnetoresistance oscillation minima for the composite fermion theory of Halperin, Lee, and Read (HLR) and its particle-hole conjugate agree exactly. Within the current experimental resolution, the locations of the oscillation minima produced by the Dirac composite fermion coincide with those of HLR. These results may indicate that all three composite fermion theories describe the same long-wavelength physics.

Hydrogen incorporation in high hole density GaN:Mg

Science.gov (United States)

Zvanut, M. E.; Uprety, Y.; Dashdorj, J.; Moseley, M.; Doolittle, W. Alan

2011-03-01

We investigate hydrogen passivation in heavily doped p-type GaN using electron paramagnetic resonance (EPR) spectroscopy. Samples include both conventionally grown GaN (1019 cm-3 Mg, 1017 cm-3 holes) and films grown by metal modulation epitaxy (MME), which yielded higher Mg (1- 4 x 1020 cm-3) and hole (1- 40 x 1018 cm-3) densities than found in conventionally grown GaN. The Mg acceptor signal is monitored throughout 30 minute annealing steps in N2 :H2 (92%:7%)) and subsequently pure N2 . N2 :H2 heat treatments of the lower hole density films begin to reduce the Mg EPR intensity at 750 o C, but quench the signal in high hole density films at 600 o C. Revival of the signal by subsequent N2 annealing occurs at 800 o C for the low hole density material and 600 o C in MME GaN. The present work highlights chemical differences between heavily Mg doped and lower doped films; however, it is unclear whether the difference is due to changes in hydrogen-Mg complex formation or hydrogen diffusion. The work at UAB is supported by the NSF.

Many-electron effect in the resonant L23-M23V Auger-electron spectrum of Ti metal

International Nuclear Information System (INIS)

Ohno, Masahide

2006-01-01

Above the L23 absorption edge the L 23 -M 23 V resonant Auger-electron spectroscopy (RAES) spectrum of Ti metal shows a normal L 23 -M 23 V Auger decay spectrum at a constant kinetic energy (K.E.). Here LX and MY are the atomic shells Lx and My, respectively. Apart from a weak spectral feature of the L2-M23V Auger transition appearing around the L2 edge, the RAES spectra of Ti meal show a very little difference between the L2 and L3 regions [P. Le Fevre, J. Danger, H. Magnan, D. Chandesris, J. Jupille, S. Bourgeois, M.-A. Arrio, R. Gotter, A. Verdini, A. Morgante, Phys. Rev. B69 (2004) 155421]. It is shown that the time scale of relaxation of the resonantly excited L23-hole state to the L23-electron ionized state is much shorter than that of the L23-hole decay so that the L 23 -M 23 V RAES spectrum of Ti metal resembles much the normal L 23 -M 23 V Auger decay spectrum. The relaxation of the resonantly excited L23-hole state to the fully relaxed L23-hole state before the L23-hole decays, explains the extra width which is the primary cause of the discrepancy between the experimental high resolution near edge X-ray absorption spectroscopy (XAS) spectrum of Ti metal and the one calculated by the particle-hole Green's function including the Coulomb exchange interaction between the 2p hole and the 3d electron. The time scale of relaxation of the L3V two-hole state created by the L2-L3V Coster-Kronig (CK) decay to the single L3-hole state is much shorter than that of the L3-hole decay so that the L2-L3V-L3-M23V CK preceded Auger decay spectrum resembles much the L3-M23V Auger decay one

From binary black hole simulation to triple black hole simulation

International Nuclear Information System (INIS)

Bai Shan; Cao Zhoujian; Han, Wen-Biao; Lin, Chun-Yu; Yo, Hwei-Jang; Yu, Jui-Ping

2011-01-01

Black hole systems are among the most promising sources for a gravitational wave detection project. Now, China is planning to construct a space-based laser interferometric detector as a follow-on mission of LISA in the near future. Aiming to provide some theoretical support to this detection project on the numerical relativity side, we focus on black hole systems simulation in this work. Considering the globular galaxy, multiple black hole systems also likely to exist in our universe and play a role as a source for the gravitational wave detector we are considering. We will give a progress report in this paper on our black hole system simulation. More specifically, we will present triple black hole simulation together with binary black hole simulation. On triple black hole simulations, one novel perturbational method is proposed.

A systematic review of portable electronic technology for health education in resource-limited settings.

Science.gov (United States)

McHenry, Megan S; Fischer, Lydia J; Chun, Yeona; Vreeman, Rachel C

2017-08-01

The objective of this study is to conduct a systematic review of the literature of how portable electronic technologies with offline functionality are perceived and used to provide health education in resource-limited settings. Three reviewers evaluated articles and performed a bibliography search to identify studies describing health education delivered by portable electronic device with offline functionality in low- or middle-income countries. Data extracted included: study population; study design and type of analysis; type of technology used; method of use; setting of technology use; impact on caregivers, patients, or overall health outcomes; and reported limitations. Searches yielded 5514 unique titles. Out of 75 critically reviewed full-text articles, 10 met inclusion criteria. Study locations included Botswana, Peru, Kenya, Thailand, Nigeria, India, Ghana, and Tanzania. Topics addressed included: development of healthcare worker training modules, clinical decision support tools, patient education tools, perceptions and usability of portable electronic technology, and comparisons of technologies and/or mobile applications. Studies primarily looked at the assessment of developed educational modules on trainee health knowledge, perceptions and usability of technology, and comparisons of technologies. Overall, studies reported positive results for portable electronic device-based health education, frequently reporting increased provider/patient knowledge, improved patient outcomes in both quality of care and management, increased provider comfort level with technology, and an environment characterized by increased levels of technology-based, informal learning situations. Negative assessments included high investment costs, lack of technical support, and fear of device theft. While the research is limited, portable electronic educational resources present promising avenues to increase access to effective health education in resource-limited settings, contingent

Phase transition for black holes with scalar hair and topological black holes

International Nuclear Information System (INIS)

Myung, Yun Soo

2008-01-01

We study phase transitions between black holes with scalar hair and topological black holes in asymptotically anti-de Sitter spacetimes. As the ground state solutions, we introduce the non-rotating BTZ black hole in three dimensions and topological black hole with hyperbolic horizon in four dimensions. For the temperature matching only, we show that the phase transition between black hole with scalar hair (Martinez-Troncoso-Zanelli black hole) and topological black hole is second-order by using differences between two free energies. However, we do not identify what order of the phase transition between scalar and non-rotating BTZ black holes occurs in three dimensions, although there exists a possible decay of scalar black hole to non-rotating BTZ black hole

MEP parabolic hydrodynamical model for holes in silicon semiconductors

International Nuclear Information System (INIS)

Mascali, G.; Romano, V.; Sellier, J. M.

2005-01-01

Consistent hydrodynamical models for electron transport in semi-conductors, free of any fitting parameter, have been formulated on the basis of the maximum entropy principle in Continuum Mech. Thermodyn., 11 (1999) 307, 12 (2000) 31 for silicon and in Continuum Mech. Thermodyn., 14 (2002) 405 for GaAs. In this paper we use the same approach for studying the hole transport in Si, by considering a parabolic approximation for the valence energy band. Scattering of holes with non-polar optical phonons, acoustic phonons and impurities have been taken into account. On the basis of these results, a limiting energy-transport model and an explicit expression for the low field hole mobility have been obtained. The high field mobility is also analyzed by taking into account the influence of impurities

Black Holes

OpenAIRE

Townsend, P. K.

1997-01-01

This paper is concerned with several not-quantum aspects of black holes, with emphasis on theoretical and mathematical issues related to numerical modeling of black hole space-times. Part of the material has a review character, but some new results or proposals are also presented. We review the experimental evidence for existence of black holes. We propose a definition of black hole region for any theory governed by a symmetric hyperbolic system of equations. Our definition reproduces the usu...

Coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compound

International Nuclear Information System (INIS)

Lu, T.P.; Wu, C.C.; Chou, W.H.; Lan, M.D.

2010-01-01

The magnetic and superconducting properties of the Sm-doped FeAs-based superconducting compound were investigated under wide ranges of temperature and magnetic field. After the systematical magnetic ion substitution, the superconducting transition temperature decreases with increasing magnetic moment. The hysteresis loop of the La 0.87-x Sm x Sr 0.13 FeAsO sample shows a superconducting hysteresis and a paramagnetic background signal. The paramagnetic signal is mainly attributed to the Sm moments. The experiment demonstrates that the coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compounds is possible. Unlike the electron doped FeAs-based superconducting compounds SmFeAsOF, the hole doped superconductivity is degraded by the substitution of La by Sm. The hole-doped and electron-doped sides are not symmetric.

Jet Power and Black Hole Assortment Revealed in New Chandra Image

Science.gov (United States)

2008-01-01

A dramatic new Chandra image of the nearby galaxy Centaurus A provides one of the best views to date of the effects of an active supermassive black hole. Opposing jets of high-energy particles can be seen extending to the outer reaches of the galaxy, and numerous smaller black holes in binary star systems are also visible. The image was made from an ultra-deep look at the galaxy Centaurus A, equivalent to more than seven days of continuous observations. Centaurus A is the nearest galaxy to Earth that contains a supermassive black hole actively powering a jet. X-ray Image of Centaurus A, Labeled X-ray Image of Centaurus A, Labeled A prominent X-ray jet extending for 13,000 light years points to the upper left in the image, with a shorter "counterjet" aimed in the opposite direction. Astronomers think that such jets are important vehicles for transporting energy from the black hole to the much larger dimensions of a galaxy, and affecting the rate at which stars form there. High-energy electrons spiraling around magnetic field lines produce the X-ray emission from the jet and counterjet. This emission quickly saps the energy from the electrons, so they must be continually reaccelerated or the X-rays will fade out. Knot-like features in the jets detected in the Chandra image show where the acceleration of particles to high energies is currently occurring, and provides important clues to understanding the process that accelerates the electrons to near-light speeds. People Who Read This Also Read... NASA’s Swift Satellite Catches First Supernova in The Act of Exploding Black Holes Have Simple Feeding Habits Chandra Data Reveal Rapidly Whirling Black Holes Erratic Black Hole Regulates Itself The inner part of the X-ray jet close to the black hole is dominated by these knots of X-ray emission, which probably come from shock waves -- akin to sonic booms -- caused by the jet. Farther from the black hole there is more diffuse X-ray emission in the jet. The cause of particle

Electron-phonon interaction on an Al(001) surface

International Nuclear Information System (INIS)

Sklyadneva, I Yu; Chulkov, E V; Echenique, P M

2008-01-01

We report an ab initio study of the electron-phonon (e-ph) interaction and its contribution to the lifetime broadening of excited hole (electron) surface states on Al(001). The calculations based on density-functional theory were carried out using a linear response approach in the plane-wave pseudopotential representation. The obtained results show that both the electron-phonon coupling and the linewidth experience a weak variation with the energy and momentum position of a hole (electron) surface state in the energy band. An analysis of different contributions to the e-ph coupling reveals that bulk phonon modes turn out to be more involved in the scattering processes of excited electrons and holes than surface phonon modes. It is also shown that the role of the e-ph coupling in the broadening of the Rayleigh surface phonon mode is insignificant compared to anharmonic effects

Peculiarities of interaction of the p{sub z}-, π- electrons and the σ{sub p}-holes at the top 1–6 layers of HOPG

Energy Technology Data Exchange (ETDEWEB)

Dementjev, A.P., E-mail: demcarbon@yandex.ru; Ivanov, K.E.

2017-03-31

Graphical abstract: The formation of π-bands and σ{sub p}- holes as result of the p{sub z} → π transitions in 2–6 graphene layers HOPG. The valence band spectrum taken from Murday et al. (1981). - Abstract: The present work continues the analysis of results of Dementjev et al. (2015) in order to identify the interlayer interactions of the π-bands. Analysis of the N(E) C KVV Auger spectra of highly-ordered pyro-graphite showed the absence of the electron exchange between the π-bands in 1–6 layers. Since the π-bands are formed by the p{sub z} → π transitions, one can suggest that the π-band occupation at each graphene layer is formed by the p{sub z}-electrons of this layer. Since the p{sub z} electrons belong to the σ{sub p}-bands, the p{sub z} → π transitions in the σ{sub p}-bands in each of 2–6 graphene layers result in formation of holes H, whose concentration is equal to the concentration of electrons in the π-bands [H{sub i}] ≡ [π{sub i}]. This shows the origin of the ambipolar conductivity in graphene. The absence of the electronic interaction between the π-bands allows a suggestion that the interaction between top six graphene layers is due to the van der Waals electrostatic attractive forces. These forces promote the p{sub z} → π transitions in each of the 2–6 graphene layers and depend on the number of graphene layers above. The N(E) C KVV Auger spectra allow identification of number (1–6) of graphene layers and the π-band occupation at each of the layer. For the first time a specification of the van der Waals forces in HOPG was done.

Stability of the nonequilibrium states of a superconductor with a finite difference between the populations of the electron- and hole-like spectral branches

International Nuclear Information System (INIS)

Gal'perin, Y.M.; Kozub, V.I.; Spivak, B.Z.

1981-01-01

The stability of the nonequilibrium states of a superconductor with a finite difference between the populations of the electron- and hole-like spectral branches is investigated. It is shown that an instability similar to the Cooper instability of a normal metal arises at a sufficiently large value of the imbalance. This eliminates the imbalance within quantum-mechanical (nonkinetic) time periods. The consistency of the allowance for the imbalance in the nonequilibrium Ginzburg-Landau equations is discussed

Simple model of electron beam initiated dielectric breakdown

International Nuclear Information System (INIS)

Beers, B.L.; Daniell, R.E.; Delmer, T.N.

1985-01-01

A steady state model that describes the internal charge distribution of a planar dielectric sample exposed to a uniform electron beam was developed. The model includes the effects of charge deposition and ionization of the beam, separate trap-modulated mobilities for electrons and holes, electron-hole recombination, and pair production by drifting thermal electrons. If the incident beam current is greater than a certain critical value (which depends on sample thickness as well as other sample properties), the steady state solution is non-physical

The Converging Inflow Spectrum Is an Intrinsic Signature for a Black Hole: Monte Carlo Simulations of Comptonization on Free-falling Electrons

Science.gov (United States)

Laurent, Philippe; Titarchuk, Lev

1999-01-01

An accreting black hole is, by definition, characterized by the drain. Namely, matter falls into a black hole much the same way as water disappears down a drain: matter goes in and nothing comes out. As this can only happen in a black hole, it provides a way to see ``a black hole,'' a unique observational signature of black holes. The accretion proceeds almost in a free-fall manner close to the black hole horizon, where the strong gravitational field dominates the pressure forces. In this paper we calculate (by using Monte Carlo simulations) the specific features of X-ray spectra formed as a result of upscattering of the soft (disk) photons in the converging inflow (CI) within about 3 Schwarzschild radii of the black hole. The full relativistic treatment has been implemented to reproduce these spectra. We show that spectra in the soft state of black hole systems (BHS) can be described as the sum of a thermal (disk) component and the convolution of some fraction of this component with the CI upscattering spread (Green's) function. The latter boosted photon component is seen as an extended power law at energies much higher than the characteristic energy of the soft photons. We demonstrate the stability of the power spectral index (α=1.8+/-0.1) over a wide range of the plasma temperature, 0-10 keV, and mass accretion rates (higher than 2 in Eddington units). We also demonstrate that the sharp high-energy cutoff occurs at energies of 200-400 keV, which are related to the average energy of electrons mec2 impinging on the event horizon. The spectrum is practically identical to the standard thermal Comptonization spectrum (Hua & Titarchuk) when the CI plasma temperature is getting of order of 50 keV (the typical ones for the hard state of BHS). In this case one can see the effect of the bulk motion only at high energies, where there is an excess in the CI spectrum with respect to the pure thermal one. Furthermore, we demonstrate that the change of spectral shapes from

Black Hole Accretion in Gamma Ray Bursts

Directory of Open Access Journals (Sweden)

Agnieszka Janiuk

2017-02-01

Full Text Available We study the structure and evolution of the hyperaccreting disks and outflows in the gamma ray bursts central engines. The torus around a stellar mass black hole is composed of free nucleons, Helium, electron-positron pairs, and is cooled by neutrino emission. Accretion of matter powers the relativistic jets, responsible for the gamma ray prompt emission. The significant number density of neutrons in the disk and outflowing material will cause subsequent formation of heavier nuclei. We study the process of nucleosynthesis and its possible observational consequences. We also apply our scenario to the recent observation of the gravitational wave signal, detected on 14 September 2015 by the two Advanced LIGO detectors, and related to an inspiral and merger of a binary black hole system. A gamma ray burst that could possibly be related with the GW150914 event was observed by the Fermi satellite. It had a duration of about 1 s and appeared about 0.4 s after the gravitational-wave signal. We propose that a collapsing massive star and a black hole in a close binary could lead to the event. The gamma ray burst was powered by a weak neutrino flux produced in the star remnant’s matter. Low spin and kick velocity of the merged black hole are reproduced in our simulations. Coincident gravitational-wave emission originates from the merger of the collapsed core and the companion black hole.

SAGES: a suite of freely-available software tools for electronic disease surveillance in resource-limited settings.

Directory of Open Access Journals (Sweden)

Sheri L Lewis

Full Text Available Public health surveillance is undergoing a revolution driven by advances in the field of information technology. Many countries have experienced vast improvements in the collection, ingestion, analysis, visualization, and dissemination of public health data. Resource-limited countries have lagged behind due to challenges in information technology infrastructure, public health resources, and the costs of proprietary software. The Suite for Automated Global Electronic bioSurveillance (SAGES is a collection of modular, flexible, freely-available software tools for electronic disease surveillance in resource-limited settings. One or more SAGES tools may be used in concert with existing surveillance applications or the SAGES tools may be used en masse for an end-to-end biosurveillance capability. This flexibility allows for the development of an inexpensive, customized, and sustainable disease surveillance system. The ability to rapidly assess anomalous disease activity may lead to more efficient use of limited resources and better compliance with World Health Organization International Health Regulations.

Use and Cost of Electronic Resources in Central Library of Ferdowsi University Based on E-metrics

Directory of Open Access Journals (Sweden)

Mohammad Reza Davarpanah

2012-07-01

Full Text Available The purpose of this study was to investigate the usage of electronic journals in Ferdowsi University, Iran based on e-metrics. The paper also aimed to emphasize the analysis of cost-benefit and the correlation between the journal impact factors and the usage data. In this study experiences of Ferdowsi University library on licensing and usage of electronic resources was evaluated by providing a cost-benefit analysis based on the cost and usage statistics of electronic resources. Vendor-provided data were also compared with local usage data. The usage data were collected by tracking web-based access locally, and by collecting vender-provided usage data. The data sources were one-year of vendor-supplied e-resource usage data such as Ebsco, Elsevier, Proquest, Emerald, Oxford and Springer and local usage data collected from the Ferdowsi university web server. The study found that actual usage values differ for vendor-provided data and local usage data. Elsevier has got the highest usage degree in searches, sessions and downloads. Statistics also showed that a small number of journals satisfy significant amount of use while the majority of journals were used less frequent and some were never used at all. The users preferred the PDF rather than HTML format. The data in subject profile suggested that the provided e-resources were best suited to certain subjects. There was no correlation between IF and electronic journal use. Monitoring the usage of e-resources gained increasing importance for acquisition policy and budget decisions. The article provided information about local metrics for the six surveyed vendors/publishers, e.g. usage trends, requests per package, cost per use as related to the scientific specialty of the university.

Observation of a hidden hole-like band approaching the fermi level in K-doped iron selenide superconductor

International Nuclear Information System (INIS)

Sunagawa, Masanori; Terashima, Kensei; Hamada, Takahiro

2016-01-01

One of the ultimate goals of the study of iron-based superconductors is to identify the common feature that produces the high critical temperature (T c ). In the early days, based on a weak-coupling viewpoint, the nesting between hole- and electron-like Fermi surfaces (FSs) leading to the so-called s± state was considered to be one such key feature. However, this theory has faced a serious challenge ever since the discovery of alkali-metal-doped FeSe (AFS) superconductors, in which only electron-like FSs with a nodeless superconducting gap are observed. Several theories have been proposed, but a consistent understanding is yet to be achieved. Here we show experimentally that a hole-like band exists in K x Fe 2-y Se 2 , which presumably forms a hole-like Fermi surface. The present study suggests that AFS can be categorized in the same group as iron arsenides with both hole- and electron-like FSs present. This result provides a foundation for a comprehensive understanding of the superconductivity in iron-based superconductors. (author)

Disentangling formation of multiple-core holes in aminophenol molecules exposed to bright X-FEL radiation

International Nuclear Information System (INIS)

Zhaunerchyk, V; Squibb, R J; Eland, J H D; Kamińska, M; Mucke, M; Piancastelli, M N; Frasinski, L J; Grilj, J; Koch, M; McFarland, B K; Sistrunk, E; Gühr, M; Coffee, R N; Bostedt, C; Bozek, J D; Salén, P; Meulen, P v d; Linusson, P; Thomas, R D; Larsson, M

2015-01-01

Competing multi-photon ionization processes, some leading to the formation of double core hole states, have been examined in 4-aminophenol. The experiments used the linac coherent light source (LCLS) x-ray free electron laser, in combination with a time-of-flight magnetic bottle electron spectrometer and the correlation analysis method of covariance mapping. The results imply that 4-aminophenol molecules exposed to the focused x-ray pulses of the LCLS sequentially absorb more than two x-ray photons, resulting in the formation of multiple core holes as well as in the sequential removal of photoelectrons and Auger electrons (so-called PAPA sequences). (paper)

Computer simulation of the formation of Langmuir solitons and holes in a cylindrical magnetized plasma column

International Nuclear Information System (INIS)

Turikov, V.A.

1978-06-01

Nonlinear plasma oscillations in a cylindrical plasma resulting from a short localized external excitation are examined by means of a particle-in-cell simulation scheme. Computer calculations are performed for describing the experimental results obtained in a single-ended Q-machine plasma in a cylindrical waveguide. It is assumed that there is a strong magnetic field in the direction of the column axis. When the amplitude of the excitation potential is close to the kinetic energy of electrons having a phase velocity of the electron plasma wave, the formation is observed of solitons and holes in phase space. After formation, the solitons and holes move with constant velocities. The velocities of solitons are close to the wave-phase velocity, while holes move with smaller velocities. When the external potential amplitude is increased, there is a tendency that the number of holes grows. The potential amplitude of the self-consistent field in the soliton region damps in time with increasing soliton width. The potential profile of the hole does not change after its formation. (Auth.)

Spectral characteristics of aurorae connected with high-velocity flows of the solar wind from coronal holes

International Nuclear Information System (INIS)

Khviyuzova, T.A.; Leont'ev, S.V.

1997-01-01

Bright electron aurorae almost always followed by red lower edge occur when the Earth is being passed by high-velocity flows from coronal holes within the auroral range at the night meridian. In contrast to other types of the solar wind the high-velocity flows from coronal holes do not cause the occurrence of A type red polar aurorae, that is, the spectrum of electrons pouring into the Earth atmosphere in these cases is shifted towards higher energies

Characterization and Effects of Fiber Pull-Outs in Hole Quality of Carbon Fiber Reinforced Plastics Composite.

Science.gov (United States)

Alizadeh Ashrafi, Sina; Miller, Peter W; Wandro, Kevin M; Kim, Dave

2016-10-13

Hole quality plays a crucial role in the production of close-tolerance holes utilized in aircraft assembly. Through drilling experiments of carbon fiber-reinforced plastic composites (CFRP), this study investigates the impact of varying drilling feed and speed conditions on fiber pull-out geometries and resulting hole quality parameters. For this study, hole quality parameters include hole size variance, hole roundness, and surface roughness. Fiber pull-out geometries are quantified by using scanning electron microscope (SEM) images of the mechanically-sectioned CFRP-machined holes, to measure pull-out length and depth. Fiber pull-out geometries and the hole quality parameter results are dependent on the drilling feed and spindle speed condition, which determines the forces and undeformed chip thickness during the process. Fiber pull-out geometries influence surface roughness parameters from a surface profilometer, while their effect on other hole quality parameters obtained from a coordinate measuring machine is minimal.

Black Holes with Anisotropic Fluid in Lyra Scalar-Tensor Theory

Directory of Open Access Journals (Sweden)

Melis ULU DOĞRU

2018-02-01

Full Text Available In this paper, we investigate distribution of anisotropic fluid which is a resource of black holes in regard to Lyra scalar-tensor theory. As part of the theory, we obtain field equations of spherically symmetric space-time with anisotropic fluid. By using field equations, we suggest distribution of anisotropic fluid, responsible for space-time geometries such as Schwarzschild, Reissner-Nordström, Minkowski type, de Sitter type, Anti-de Sitter type, BTZ and charged BTZ black holes. Finally, we discuss obtained pressures and density of the fluid for different values of arbitrary constants, geometrically and physically.

Electron excitation relaxation in wide-gap single crystal insulators under swift heavy-ion irradiation

International Nuclear Information System (INIS)

Yavlinskii, Yu.N.

2000-01-01

A heavy, multicharged ion moving in a solid interacts with nuclei and electrons of the matter atoms. If the projectile velocity exceeds the typical orbital velocity of the target electrons, the main process is excitation of the electronic subsystem, i.e., excitation and ionization of bound electrons. Initially, relaxation of the electron excitations results from electronic processes alone, and energy transfer from electrons to lattice happens later. Since free charge carriers are absent in insulators before irradiation, the motion of the excited electrons is possible only together with holes. Due to inner pressure of the electron-hole plasma the expansion takes place. The velocity of the expansion is determined by the heat velocity of electron-hole pairs. As the excitation region expands, the density of the electron-hole pairs decreases, the average distance between pairs increases, and excitons are produced. The expansion can be terminated in the time t≅10 -13 s, when, due to the electron-phonon interaction, self-trapped holes (and excitons) are formed. The annihilation of the trapped excitons gives rise to Frenkel defects. The set of equations comprising the continuity equation, the Euler equation and energy conservation is considered. The analytic dependence on time of the electron temperature and the radius of the excitation region is derived. The observation of projectile traces in a target is discussed in the single projectile regime

Building and Managing Electronic Resources in Digital Era in India with Special Reference to IUCAA and NIV, Pune: A Comparative Case Study

Science.gov (United States)

Sahu, H. K.; Singh, S. N.

2015-04-01

This paper discusses and presents a comparative case study of two libraries in Pune, India, Inter-University Centre for Astronomy and Astrophysics and Information Centre and Library of National Institute of Virology (Indian Council of Medical Research). It compares how both libraries have managed their e-resource collections, including acquisitions, subscriptions, and consortia arrangements, while also developing a collection of their own resources, including pre-prints and publications, video lectures, and other materials in an institutional repository. This study illustrates how difficult it is to manage electronic resources in a developing country like India, even though electronic resources are used more than print resources. Electronic resource management can be daunting, but with a systematic approach, various problems can be solved, and use of the materials will be enhanced.

Low-mass black holes as the remnants of primordial black hole formation.

Science.gov (United States)

Greene, Jenny E

2012-01-01

Bridging the gap between the approximately ten solar mass 'stellar mass' black holes and the 'supermassive' black holes of millions to billions of solar masses are the elusive 'intermediate-mass' black holes. Their discovery is key to understanding whether supermassive black holes can grow from stellar-mass black holes or whether a more exotic process accelerated their growth soon after the Big Bang. Currently, tentative evidence suggests that the progenitors of supermassive black holes were formed as ∼10(4)-10(5) M(⊙) black holes via the direct collapse of gas. Ongoing searches for intermediate-mass black holes at galaxy centres will help shed light on this formation mechanism.

Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

Energy Technology Data Exchange (ETDEWEB)

Grachev, V.; Meyer, M.; Malovichko, G. [Physics Department, Montana State University, Bozeman, Montana 59717 (United States); Hunt, A. W. [Idaho Accelerator Center, Idaho State University, Pocatello, Idaho 83209 (United States)

2014-12-07

Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20 MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and γ-radiation.

Observation of relaxation on time scale of core hole decay by coincidence photoelectron spectroscopy

International Nuclear Information System (INIS)

Ohno, Masahide

2007-01-01

It is shown by a many-body theory that when the relaxation time of a metastable core hole state(s) to the most stable one is comparable to or shorter than core hole decay time of the former state(s), a comparison between the singles (noncoincidence) photoelectron spectroscopy (PES) spectrum and the coincidence one provides a direct evidence of the relaxation. In principle the variation with photoelectron kinetic energy of relaxation (or charge transfer (CT)) time can be determined. By singles measurement the correlation of a photoelectron generated by creation of the metastable states not only with an Auger electron generated by annihilation of the same core hole state but also with an Auger electron generated by annihilation of the stable state via relaxation of the metastable state, is completely lost, unless only the metastable state is observed by PES, whereas the correlation often manifests directly in the coincidence spectra. Thus, compared to the coincidence spectroscopy the singles one is often much less capable of elucidating the competition between relaxation and core hole decay of a metastable state. Such examples are discussed

Histopathological detection of entry and exit holes in human skin wounds caused by firearms.

Science.gov (United States)

Baptista, Marcus Vinícius; d'Ávila, Solange C G P; d'Ávila, Antônio Miguel M P

2014-07-01

The judiciary needs forensic medicine to determine the difference between an entry hole and an exit hole in human skin caused by firearms for civilian use. This important information would be most useful if a practical and accurate method could be done with low-cost and minimal technological resources. Both macroscopic and microscopic analyses were performed on skin lesions caused by firearm projectiles, to establish histological features of 14 entry holes and 14 exit holes. Microscopically, in the abrasion area macroscopically observed, there were signs of burns (sub-epidermal cracks and keratinocyte necrosis) in the entrance holes in all cases. These signs were not found in three exit holes which showed an abrasion collar, nor in other exit holes. Some other microscopic features not found in every case were limited either to entry holes, such as cotton fibres, grease deposits, or tattooing in the dermis, or to exit holes, such as adipose tissue, bone or muscle tissue in the dermis. Coagulative necrosis of keratinocytes and sub-epidermal cracks are characteristic of entry holes. Despite the small sample size, it can be safely inferred that this is an important microscopic finding, among others less consistently found, to define an entry hole in questionable cases. Copyright © 2014 Elsevier Ltd and Faculty of Forensic and Legal Medicine. All rights reserved.

Stable micron-scale holes are a general feature of canonical holins.

Science.gov (United States)

Savva, Christos G; Dewey, Jill S; Moussa, Samir H; To, Kam H; Holzenburg, Andreas; Young, Ry

2014-01-01

At a programmed time in phage infection cycles, canonical holins suddenly trigger to cause lethal damage to the cytoplasmic membrane, resulting in the cessation of respiration and the non-specific release of pre-folded, fully active endolysins to the periplasm. For the paradigm holin S105 of lambda, triggering is correlated with the formation of micron-scale membrane holes, visible as interruptions in the bilayer in cryo-electron microscopic images and tomographic reconstructions. Here we report that the size distribution of the holes is stable for long periods after triggering. Moreover, early triggering caused by an early lysis allele of S105 formed approximately the same number of holes, but the lesions were significantly smaller. In contrast, early triggering prematurely induced by energy poisons resulted in many fewer visible holes, consistent with previous sizing studies. Importantly, the unrelated canonical holins P2 Y and T4 T were found to cause the formation of holes of approximately the same size and number as for lambda. In contrast, no such lesions were visible after triggering of the pinholin S(21) 68. These results generalize the hole formation phenomenon for canonical holins. A model is presented suggesting the unprecedentedly large size of these holes is related to the timing mechanism. © 2013 John Wiley & Sons Ltd.

Hole dephasing caused by hole-hole interaction in a multilayered black phosphorus.

Science.gov (United States)

Li, Lijun; Khan, Muhammad Atif; Lee, Yoontae; Lee, Inyeal; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

2017-11-01

We study the magnetotransport of holes in a multilayered black phosphorus in a temperature range of 1.9 to 21.5 K. We observed a negative magnetoresistance at magnetic fields up to 1.5 T. This negative magetoresistance was analyzed by weak localization theory in diffusive regime. At the lowest temperature and the highest carrier density we found a phase coherence length of 48 nm. The linear temperature dependence of the dephasing rate shows that the hole-hole scattering processes with small energy transfer are the dominant contribution in breaking the carrier phase coherence.

Efficient Naphthalenediimide-Based Hole Semiconducting Polymer with Vinylene Linkers between Donor and Acceptor Units

KAUST Repository

Zhang, Lei

2016-11-04

We demonstrate a new method to reverse the polarity and charge transport behavior of naphthalenediimide (NDI)-based copolymers by inserting a vinylene linker between the donor and acceptor units. The vinylene linkers minimize the intrinsic steric congestion between the NDI and thiophene moieties to prompt backbone planarity. The polymers with vinylene linkers exhibit electron n-channel transport characteristics under vacuum, similar to the benchmark polymer, P(NDI2OD-T2). To our surprise, when the polymers are measured in air, the dominant carrier type switches from n- to p-type and yield hole mobilities up to 0.45 cm(2) s(-1) with hole to electron mobility ratio of three (mu(h)/mu(e), similar to 3), which indicates that the hole density in the active layer can be significantly increased by exposure to air. This increase is consistent with the intrinsic more delocalized nature of the highest occupied molecular orbital of the charged vinylene polymer, as estimated by density functional theory (DFT) calculations, which facilitates hole transport within the polymer chains. This is the first demonstration of an efficient NDI-based hole semiconducting polymer, which will enable new developments in all-polymer solar cells, complementary circuits, and dopable polymers for use in thermoelectrics.

Efficient Naphthalenediimide-Based Hole Semiconducting Polymer with Vinylene Linkers between Donor and Acceptor Units

KAUST Repository

Zhang, Lei; Rose, Bradley Daniel; Liu, Yao; Nahid, Masrur M.; Gann, Eliot; Ly, Jack; Zhao, Wei; Rosa, Stephen J.; Russell, Thomas P.; Facchetti, Antonio; McNei, Christopher R.; Bredas, Jean-Luc; Briseno, Alejandro L.

2016-01-01

We demonstrate a new method to reverse the polarity and charge transport behavior of naphthalenediimide (NDI)-based copolymers by inserting a vinylene linker between the donor and acceptor units. The vinylene linkers minimize the intrinsic steric congestion between the NDI and thiophene moieties to prompt backbone planarity. The polymers with vinylene linkers exhibit electron n-channel transport characteristics under vacuum, similar to the benchmark polymer, P(NDI2OD-T2). To our surprise, when the polymers are measured in air, the dominant carrier type switches from n- to p-type and yield hole mobilities up to 0.45 cm(2) s(-1) with hole to electron mobility ratio of three (mu(h)/mu(e), similar to 3), which indicates that the hole density in the active layer can be significantly increased by exposure to air. This increase is consistent with the intrinsic more delocalized nature of the highest occupied molecular orbital of the charged vinylene polymer, as estimated by density functional theory (DFT) calculations, which facilitates hole transport within the polymer chains. This is the first demonstration of an efficient NDI-based hole semiconducting polymer, which will enable new developments in all-polymer solar cells, complementary circuits, and dopable polymers for use in thermoelectrics.

Paradoxical Long-Timespan Opening of the Hole in Self-Supported Water Films of Nanometer Thickness.

Science.gov (United States)

Barkay, Z; Bormashenko, E

2017-05-16

The opening of holes in self-supported thin (nanoscaled) water films has been investigated in situ with the environmental scanning electron microscope. The opening of a hole occurs within a two-stage process. In the first stage, the rim surrounding a hole is formed, resembling the process that is observed under the puncturing of soap bubbles. In the second stage, the exponential growth of the hole is observed, with a characteristic time of a dozen seconds. We explain the exponential kinetics of hole growth by the balance between inertia (gravity) and viscous dissipation. The kinetics of opening a microscaled hole is governed by the processes taking place in the nanothick bulk of the self-supported liquid film. Nanoparticles provide markers for the visualization of the processes occurring in self-supported thin nanoscale liquid films.

Bifurcation from stable holes to replicating holes in vibrated dense suspensions.

Science.gov (United States)

Ebata, H; Sano, M

2013-11-01

In vertically vibrated starch suspensions, we observe bifurcations from stable holes to replicating holes. Above a certain acceleration, finite-amplitude deformations of the vibrated surface continue to grow until void penetrates fluid layers, and a hole forms. We studied experimentally and theoretically the parameter dependence of the holes and their stabilities. In suspensions of small dispersed particles, the circular shapes of the holes are stable. However, we find that larger particles or lower surface tension of water destabilize the circular shapes; this indicates the importance of capillary forces acting on the dispersed particles. Around the critical acceleration for bifurcation, holes show intermittent large deformations as a precursor to hole replication. We applied a phenomenological model for deformable domains, which is used in reaction-diffusion systems. The model can explain the basic dynamics of the holes, such as intermittent behavior, probability distribution functions of deformation, and time intervals of replication. Results from the phenomenological model match the linear growth rate below criticality that was estimated from experimental data.

Detecting binary black holes with efficient and reliable templates

International Nuclear Information System (INIS)

Damour, T.; Iyer, B.R.; Sathyaprakash, B.S.

2001-01-01

Detecting binary black holes in interferometer data requires an accurate knowledge of the orbital phase evolution of the system. From the point of view of data analysis one also needs fast algorithms to compute the templates that will be employed in searching for black hole binaries. Recently, there has been progress on both these fronts: On one hand, re-summation techniques have made it possible to accelerate the convergence of poorly convergent asymptotic post-Newtonian series and derive waveforms beyond the conventional adiabatic approximation. We now have a waveform model that extends beyond the inspiral regime into the plunge phase followed by the quasi-normal mode ringing. On the other hand, explicit Fourier domain waveforms have been derived that make the generation of waveforms fast enough so as not to be a burden on the computational resources required in filtering the detector data. These new developments should make it possible to efficiently and reliably search for black hole binaries in data from first interferometers. (author)

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao

2017-04-12

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlö gl, Udo; Huang, Wei

2017-01-01

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

EMHP: an accurate automated hole masking algorithm for single-particle cryo-EM image processing.

Science.gov (United States)

Berndsen, Zachary; Bowman, Charles; Jang, Haerin; Ward, Andrew B

2017-12-01

The Electron Microscopy Hole Punch (EMHP) is a streamlined suite of tools for quick assessment, sorting and hole masking of electron micrographs. With recent advances in single-particle electron cryo-microscopy (cryo-EM) data processing allowing for the rapid determination of protein structures using a smaller computational footprint, we saw the need for a fast and simple tool for data pre-processing that could run independent of existing high-performance computing (HPC) infrastructures. EMHP provides a data preprocessing platform in a small package that requires minimal python dependencies to function. https://www.bitbucket.org/chazbot/emhp Apache 2.0 License. bowman@scripps.edu. Supplementary data are available at Bioinformatics online. © The Author(s) 2017. Published by Oxford University Press.

Measurement of a heavy-hole hyperfine interaction in InGaAs quantum dots using resonance fluorescence.

Science.gov (United States)

Fallahi, P; Yilmaz, S T; Imamoğlu, A

2010-12-17

We measure the strength and the sign of hyperfine interaction of a heavy hole with nuclear spins in single self-assembled quantum dots. Our experiments utilize the locking of a quantum dot resonance to an incident laser frequency to generate nuclear spin polarization. By monitoring the resulting Overhauser shift of optical transitions that are split either by electron or exciton Zeeman energy with respect to the locked transition using resonance fluorescence, we find that the ratio of the heavy-hole and electron hyperfine interactions is -0.09 ± 0.02 in three quantum dots. Since hyperfine interactions constitute the principal decoherence source for spin qubits, we expect our results to be important for efforts aimed at using heavy-hole spins in quantum information processing.

Carbon nanotubes--electronic/electrochemical properties and application for nanoelectronics and photonics.

Science.gov (United States)

Sgobba, Vito; Guldi, Dirk M

2009-01-01

The fundamental chemical, redox, electrochemical, photoelectrochemical, optical and optoelectronic features of carbon nanotubes are surveyed with particular emphasis on the most relevant applications as electron donor/electron acceptor or as electron conductor/hole conductor materials, in solutions and in the solid state. Methods that aim at p- and n-doping as a means to favor hole or electron injection/transport are covered as well (critical review, 208 references).

Investigation on the electron flux to the wall in the VENUS ion source

Energy Technology Data Exchange (ETDEWEB)

Thuillier, T., E-mail: thuillier@lpsc.in2p3.fr; Angot, J. [LPSC, Université Grenoble-Alpes, CNRS/IN2P3, 53 rue des Martyrs, 38026 Grenoble Cedex (France); Benitez, J. Y.; Hodgkinson, A.; Lyneis, C. M.; Todd, D. S.; Xie, D. Z. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2016-02-15

The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.

Black Holes

OpenAIRE

Horowitz, Gary T.; Teukolsky, Saul A.

1998-01-01

Black holes are among the most intriguing objects in modern physics. Their influence ranges from powering quasars and other active galactic nuclei, to providing key insights into quantum gravity. We review the observational evidence for black holes, and briefly discuss some of their properties. We also describe some recent developments involving cosmic censorship and the statistical origin of black hole entropy.

[Use of internet and electronic resources among Spanish intensivist physicians. First national survey].

Science.gov (United States)

Gómez-Tello, V; Latour-Pérez, J; Añón Elizalde, J M; Palencia-Herrejón, E; Díaz-Alersi, R; De Lucas-García, N

2006-01-01

Estimate knowledge and use habits of different electronic resources in a sample of Spanish intensivists: Internet, E-mail, distribution lists, and use of portable electronic devices. Self-applied questionnaire. A 50-question questionnaire was distributed among Spanish intensivists through the hospital marketing delegates of a pharmaceutical company and of electronic forums. A total of 682 questionnaires were analyzed (participation: 74%). Ninety six percent of those surveyed used Internet individually: 67% admitted training gap. Internet was the second source of clinical consultations most used (61%), slightly behind consultation to colleagues (65%). The pages consulted most were bibliographic databases (65%) and electronic professional journals (63%), with limited use of Evidence Based Medicine pages (19%). Ninety percent of those surveyed used e-mail regularly in the practice of their profession, although 25% admitted that were not aware of its possibilities. The use of E-mail decreased significantly with increase in age. A total of 62% of the intensivists used distribution lists. Of the rest, 42% were not aware of its existence and 32% admitted they had insufficient training to handle them. Twenty percent of those surveyed had portable electronic devices and 64% considered it useful, basically due to its rapid consultation at bedside. Female gender was a negative predictive factor of its use (OR 0.35; 95% CI 0.2-0.63; p=0.0002). A large majority of the Spanish intensivists use Internet and E-mail. E-mail lists and use of portable devices are still underused resources. There are important gaps in training and infrequent use of essential pages. There are specific groups that require directed educational policies.

Effect of thallium impurity on hole scattering in lead telluride

International Nuclear Information System (INIS)

Kajdanov, V.I.; Nemov, S.A.

1981-01-01

Hole mobility in PbTe monocrystalline specimens in the temperature range from 4.2 to 300 K has been investigated. Detected is a sharp increase in scattering cross section of light and heavy holes in the specimens having the Hall hole concentration p approximately (5+-9)x10 19 cm -3 explained by resonant scattering into a band of quasilocal states of thallium located lower than the ceiling of heavy carrier zone by 0.01+-0.01 eV. Very large differences in resonant scattering of current carriers into the quasilocal states of In and Tl in PbTe result from the inertial polarizability of a crystal. The same mechanism is used to explain long-lived relaxation of zone electron concentration in lead telluride and Pbsub(1-x)Snsub(x)Te doped with indium [ru

Model of e-learning with electronic educational resources of new generation

OpenAIRE

A. V. Loban; D. A. Lovtsov

2017-01-01

Purpose of the article: improving of scientific and methodical base of the theory of the е-learning of variability. Methods used: conceptual and logical modeling of the е-learning of variability process with electronic educational resource of new generation and system analysis of the interconnection of the studied subject area, methods, didactics approaches and information and communication technologies means. Results: the formalization complex model of the е-learning of variability with elec...

Black hole levitron

International Nuclear Information System (INIS)

Arsiwalla, Xerxes D.; Verlinde, Erik P.

2010-01-01

We study the problem of spatially stabilizing four dimensional extremal black holes in background electric/magnetic fields. Whilst looking for stationary stable solutions describing black holes placed in external fields we find that taking a continuum limit of Denef et al.'s multicenter supersymmetric black hole solutions provides a supergravity description of such backgrounds within which a black hole can be trapped within a confined volume. This construction is realized by solving for a levitating black hole over a magnetic dipole base. We comment on how such a construction is akin to a mechanical levitron.

Determination of the electron-hole pair creation energy for semiconductors from the spectral responsivity of photodiodes

CERN Document Server

Scholze, F; Kuschnerus, P; Rabus, H; Richter, M; Ulm, G

2000-01-01

Ionizing radiation can be detected by the measurement of the charge carriers produced in a detector. The improved semiconductor technology now allows detectors operating near the physical limits of the detector materials to be designed. The mean energy required for producing an electron-hole pair, W, is a material property of the semiconductor. Here, the determination of W from the spectral responsivity of photodiodes is demonstrated. Using spectrally dispersed synchrotron radiation, different types of semiconductor photodiodes have been examined in the UV-, VUV-, and soft X-ray spectral range. Their spectral responsivity was determined with relative uncertainties between 0.4% and 1% using a cryogenic electrical-substitution radiometer as primary detector standard. Results are presented for silicon n-on-p junction photodiodes and for GaAsP/Au Schottky diodes at room temperature. The investigations for silicon covered the complete spectral range from 3 to 1500 eV, yielding a constant value W=(3.66+-0.03) eV fo...

The impact of long-range electron-hole interaction on the charge separation yield of molecular photocells

Science.gov (United States)

Nemati Aram, Tahereh; Ernzerhof, Matthias; Asgari, Asghar; Mayou, Didier

2017-01-01

We discuss the effects of charge carrier interaction and recombination on the operation of molecular photocells. Molecular photocells are devices where the energy conversion process takes place in a single molecular donor-acceptor complex attached to electrodes. Our investigation is based on the quantum scattering theory, in particular on the Lippmann-Schwinger equation; this minimizes the complexity of the problem while providing useful and non-trivial insight into the mechanism governing photocell operation. In this study, both exciton pair creation and dissociation are treated in the energy domain, and therefore there is access to detailed spectral information, which can be used as a framework to interpret the charge separation yield. We demonstrate that the charge carrier separation is a complex process that is affected by different parameters, such as the strength of the electron-hole interaction and the non-radiative recombination rate. Our analysis helps to optimize the charge separation process and the energy transfer in organic solar cells and in molecular photocells.

Noncommutative black holes

Energy Technology Data Exchange (ETDEWEB)

Lopez-DomInguez, J C [Instituto de Fisica de la Universidad de Guanajuato PO Box E-143, 37150 Leoen Gto. (Mexico); Obregon, O [Instituto de Fisica de la Universidad de Guanajuato PO Box E-143, 37150 Leoen Gto. (Mexico); RamIrez, C [Facultad de Ciencias FIsico Matematicas, Universidad Autonoma de Puebla, PO Box 1364, 72000 Puebla (Mexico); Sabido, M [Instituto de Fisica de la Universidad de Guanajuato PO Box E-143, 37150 Leoen Gto. (Mexico)

2007-11-15

We study noncommutative black holes, by using a diffeomorphism between the Schwarzschild black hole and the Kantowski-Sachs cosmological model, which is generalized to noncommutative minisuperspace. Through the use of the Feynman-Hibbs procedure we are able to study the thermodynamics of the black hole, in particular, we calculate Hawking's temperature and entropy for the 'noncommutative' Schwarzschild black hole.

Black hole critical phenomena without black holes

Indian Academy of Sciences (India)

large values of Ф, black holes do form and for small values the scalar field ... on the near side of the ridge ultimately evolve to form black holes while those configu- ... The inset shows a bird's eye view looking down on the saddle point.

Search for black holes

International Nuclear Information System (INIS)

Cherepashchuk, Anatolii M

2003-01-01

Methods and results of searching for stellar mass black holes in binary systems and for supermassive black holes in galactic nuclei of different types are described. As of now (June 2002), a total of 100 black hole candidates are known. All the necessary conditions Einstein's General Relativity imposes on the observational properties of black holes are satisfied for candidate objects available, thus further assuring the existence of black holes in the Universe. Prospects for obtaining sufficient criteria for reliably distinguishing candidate black holes from real black holes are discussed. (reviews of topical problems)

Berry phase dependent quantum trajectories of electron-hole pairs in semiconductors under intense terahertz fields

Science.gov (United States)

Yang, Fan; Liu, Ren-Bao

2013-03-01

Quantum evolution of particles under strong fields can be approximated by the quantum trajectories that satisfy the stationary phase condition in the Dirac-Feynmann path integrals. The quantum trajectories are the key concept to understand strong-field optics phenomena, such as high-order harmonic generation (HHG), above-threshold ionization (ATI), and high-order terahertz siedeband generation (HSG). The HSG in semiconductors may have a wealth of physics due to the possible nontrivial ``vacuum'' states of band materials. We find that in a spin-orbit-coupled semiconductor, the cyclic quantum trajectories of an electron-hole pair under a strong terahertz field accumulates nontrivial Berry phases. We study the monolayer MoS2 as a model system and find that the Berry phases are given by the Faraday rotation angles of the pulse emission from the material under short-pulse excitation. This result demonstrates an interesting Berry phase dependent effect in the extremely nonlinear optics of semiconductors. This work is supported by Hong Kong RGC/GRF 401512 and the CUHK Focused Investments Scheme.

Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho-Kyun; Jin, Jun Eon; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); Kim, Yong Jin; Kim, Young Keun [Department of Materials Science and Engineering, Korea University, Seoul 02481 (Korea, Republic of); Shin, Minju [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); IMEP-LAHC, Grenoble INP-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble (France)

2015-12-14

Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe{sub 2} field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe{sub 2} FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (S{sub I}) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NS{sub I}) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

Impact of Knowledge Resources Linked to an Electronic Health Record on Frequency of Unnecessary Tests and Treatments

Science.gov (United States)

Goodman, Kenneth; Grad, Roland; Pluye, Pierre; Nowacki, Amy; Hickner, John

2012-01-01

Introduction: Electronic knowledge resources have the potential to rapidly provide answers to clinicians' questions. We sought to determine clinicians' reasons for searching these resources, the rate of finding relevant information, and the perceived clinical impact of the information they retrieved. Methods: We asked general internists, family…

Electronic Document Management: A Human Resource Management Case Study

Directory of Open Access Journals (Sweden)

Thomas Groenewald

2004-11-01

Full Text Available This case study serve as exemplar regarding what can go wrong with the implementation of an electronic document management system. Knowledge agility and knowledge as capital, is outlined against the backdrop of the information society and knowledge economy. The importance of electronic document management and control is sketched thereafter. The literature review is concluded with the impact of human resource management on knowledge agility, which includes references to the learning organisation and complexity theory. The intervention methodology, comprising three phases, follows next. The results of the three phases are presented thereafter. Partial success has been achieved with improving the human efficacy of electronic document management, however the client opted to discontinue the system in use. Opsomming Die gevalle studie dien as voorbeeld van wat kan verkeerd loop met die implementering van ’n elektroniese dokumentbestuur sisteem. Teen die agtergrond van die inligtingsgemeenskap en kennishuishouding word kennissoepelheid en kennis as kapitaal bespreek. Die literatuurstudie word afgesluit met die inpak van menslikehulpbronbestuur op kennissoepelheid, wat ook die verwysings na die leerorganisasie en kompleksietydsteorie insluit. Die metodologie van die intervensie, wat uit drie fases bestaan, volg daarna. Die resultate van die drie fases word vervolgens aangebied. Slegs gedeelte welslae is behaal met die verbetering van die menslike doeltreffendheid ten opsigte van elektroniese dokumentbestuur. Die klient besluit egter om nie voort te gaan om die huidige sisteem te gebruik nie.

The force-free magnetosphere of a rotating black hole

Directory of Open Access Journals (Sweden)

Contopoulos Ioannis

2013-12-01

Full Text Available We explore the analogy with pulsars and investigate the structure of the force-free magnetosphere around a Kerr black hole. We propose that the source of the black hole magnetic field is the Poynting-Robertson effect on the plasma electrons at the inner edge of the surrounding accretion disk, the so called Cosmic Battery. The magnetospheric solution is characterized by the distributions of the magnetic field angular velocity and the poloidal electric current. These are not arbitrary. They are determined self-consistently by requiring that magnetic field lines cross smoothly the two singular surfaces of the problem, the inner ‘light surface’ located inside the ergosphere, and the outer ‘light surface’ which is the generalization of the pulsar light cylinder. The black hole forms a relativistic jet only if it is surrounded by a thick disk and/or extended disk outflows.

The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

1999-01-01

Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models. Here we separate the effects of electron-hole annihilation and electron trapping on the neutralization of radiation-induced charge during switched-bias irradiation for hard and soft oxides, via combined thermally stimulated current (TSC) and capacitance-voltage measurements. We also show that present total-dose models cannot account for the thermal stability of deeply trapped electrons near the Si/SiO 2 interface, or the inability of electrons in deep or shallow traps to contribute to TSC at positive bias following (1) room-temperature, (2) high-temperature, or (3) switched-bias irradiation. These results require revisions of modeling parameters and boundary conditions for hole and electron transport in SiO 2 . The nature of deep and shallow electron traps in the near-interfacial SiO 2 is discussed

Peripheral Hole Acceptor Moieties on an Organic Dye Improve Dye‐Sensitized Solar Cell Performance

Science.gov (United States)

Hao, Yan; Gabrielsson, Erik; Lohse, Peter William; Yang, Wenxing; Johansson, Erik M. J.; Hagfeldt, Anders

2015-01-01

Investigation of charge transfer dynamics in dye‐sensitized solar cells is of fundamental interest and the control of these dynamics is a key factor for developing more efficient solar cell devices. One possibility for attenuating losses through recombination between injected electrons and oxidized dye molecules is to move the positive charge further away from the metal oxide surface. For this purpose, a metal‐free dye named E6 is developed, in which the chromophore core is tethered to two external triphenylamine (TPA) units. After photoinduced electron injection into TiO2, the remaining hole is rapidly transferred to a peripheral TPA unit. Electron–hole recombination is slowed down by 30% compared to a reference dye without peripheral TPA units. Furthermore, it is found that the added TPA moieties improve the electron blocking effect of the dye, retarding recombination of electrons from TiO2 to the cobalt‐based electrolyte. PMID:27722076

Challenges in the implementation of an electronic surveillance system in a resource-limited setting: Alerta, in Peru

Directory of Open Access Journals (Sweden)

Soto Giselle

2008-11-01

Full Text Available Abstract Background Infectious disease surveillance is a primary public health function in resource-limited settings. In 2003, an electronic disease surveillance system (Alerta was established in the Peruvian Navy with support from the U.S. Naval Medical Research Center Detachment (NMRCD. Many challenges arose during the implementation process, and a variety of solutions were applied. The purpose of this paper is to identify and discuss these issues. Methods This is a retrospective description of the Alerta implementation. After a thoughtful evaluation according to the Centers for Disease Control and Prevention (CDC guidelines, the main challenges to implementation were identified and solutions were devised in the context of a resource-limited setting, Peru. Results After four years of operation, we have identified a number of challenges in implementing and operating this electronic disease surveillance system. These can be divided into the following categories: (1 issues with personnel and stakeholders; (2 issues with resources in a developing setting; (3 issues with processes involved in the collection of data and operation of the system; and (4 issues with organization at the central hub. Some of the challenges are unique to resource-limited settings, but many are applicable for any surveillance system. For each of these challenges, we developed feasible solutions that are discussed. Conclusion There are many challenges to overcome when implementing an electronic disease surveillance system, not only related to technology issues. A comprehensive approach is required for success, including: technical support, personnel management, effective training, and cultural sensitivity in order to assure the effective deployment of an electronic disease surveillance system.

Hole transport and photoluminescence in Mg-doped InN

Energy Technology Data Exchange (ETDEWEB)

Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

2010-03-24

Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

A Dancing Black Hole

Science.gov (United States)

Shoemaker, Deirdre; Smith, Kenneth; Schnetter, Erik; Fiske, David; Laguna, Pablo; Pullin, Jorge

2002-04-01

Recently, stationary black holes have been successfully simulated for up to times of approximately 600-1000M, where M is the mass of the black hole. Considering that the expected burst of gravitational radiation from a binary black hole merger would last approximately 200-500M, black hole codes are approaching the point where simulations of mergers may be feasible. We will present two types of simulations of single black holes obtained with a code based on the Baumgarte-Shapiro-Shibata-Nakamura formulation of the Einstein evolution equations. One type of simulations addresses the stability properties of stationary black hole evolutions. The second type of simulations demonstrates the ability of our code to move a black hole through the computational domain. This is accomplished by shifting the stationary black hole solution to a coordinate system in which the location of the black hole is time dependent.