Large thermal conductivity reduction induced by La/O vacancies in the thermoelectric LaCoO3 system.

Science.gov (United States)

Wang, Yang; Li, Fang; Xu, Luxiang; Sui, Yu; Wang, Xianjie; Su, Wenhui; Liu, Xiaoyang

2011-05-16

A series of compact La/O-vacant La(1-x)CoO(3-y) compounds were prepared by a cold high-pressure procedure, and their thermoelectric (TE) properties were investigated. Compared with the ion-substituted hole-type LaCoO(3) systems (e.g., La(1-x)Sr(x)CoO(3)), the thermal conduction of La(1-x)CoO(3-y) is noticeably reduced by the La/O vacancies, whereas the electric transport is less influenced, which results in an efficient ZT enhancement. We demonstrate that the large thermal conductivity reduction originates from the strong point-defect scattering, and La(1-x)CoO(3-y) can be rationalized as a partially filled solid solution: La(1-x)◻(x)CoO(3-y)◻(y), where ◻ denotes a vacancy. Such intrinsic thermal conductivity suppression provides an effective pathway for the design of better TE materials.

Controllable factors affecting the epitaxial quality of LaCoO3 films ...

Indian Academy of Sciences (India)

2018-03-23

Mar 23, 2018 ... ... larger molecular weight contribute to the improvement of epitaxial quality of LaCoO3 epitaxial film. ..... Research Fund of Education Department of Sichuan Province. (grant nos. 16ZA0133 and 15ZB0108); and the Doctoral.

Direct measurement of the low temperature spin state transitions in La1-xSrxCoO3 (0.05 < x < 0.3)

Science.gov (United States)

Gulec, A.; Klie, R. F.

2014-12-01

Sr-doped LaCoO3 has a complex magnetic phase diagram, which is believed to be directly correlated to changes in the crystal structure and ordering of the Co3+ spin states. In this work, we study the low temperature Co3+-ion spin state transitions in Sr-doped LaCoO3 around the critical doping concentration where a metal to insulator transition has been observed using electron energy-loss spectroscopy of the O K-edge combined with the Co L-edge fine structure. We measure the local spin state of the Co3+-ions and we demonstrate that the Co3+ spin-state transition only occurs in La0.95Sr0.05CoO3 single-crystal materials in the temperature range accessible by LN2 in-situ cooling, while no structural symmetry change is observed. The presence of this low-temperature spin-state transition in La1-xSrxCoO3 (x < 0.17) has been proposed as the origin of the percolative magnetic ordering in doped LaCoO3.

The nature of holes in carbon doped titania

International Nuclear Information System (INIS)

Rabani, J.

2009-01-01

Complete text of publication follows. It is well known that semiconductors (SC) produce conduction band electrons and valence band holes upon band gap excitation. The mobile species become quickly trapped at the surface. The most popular semiconductor is titanium dioxide, where the reactive surface holes (h T + ) have been recently identified as surface -O ·- (or - · OH depending on pH) covalently linked to Ti atoms. Most organic compounds are oxidized by the holes. These holes react similarly to · OH radicals and hence there is some resemblance between the photochemistry of TiO 2 and radiolysis, although in the case of TiO 2 the reactions take place on the surface. Titanium dioxide has many favorable properties for application as a photocatalyst for decontamination of water from organic materials, but is lacking absorption in the visible range, where photons are relatively cheap. In addition the quantum yield of reaction with solutes in water is too low under conditions required by industrial water treatment due to the competition between electron-hole recombination and localization at the surface. The discovery that doping of TiO 2 leads to extension of the photoactive region from UV to visible light has remarkably increased the interest in such doped TiO 2 , and a large number of materials have been developed on the basis of this strategy. We'll focus on carbon doped TiO 2 where the visible photoactivity is attributed to introduction of intragap localized carbon states or organic segments. Visible photolysis of aerated carbon doped TiO 2 (C-TiO 2 ) aqueous suspensions induces oxidation of the model compound used, namely methanol. The effects of absorbed light density, added hydrogen peroxide and added catalase on the rate of HCHO formation have been studied. The mechanism has been shown to involve oxidation of CH 3 OH by surface trapped holes, although these holes have lower energy than those formed upon UV photolysis of undoped TiO 2 . The C-TiO 2 electrons

Role of entropy and structural parameters in the spin-state transition of LaCoO3

Science.gov (United States)

Chakrabarti, Bismayan; Birol, Turan; Haule, Kristjan

2017-11-01

The spin-state transition in LaCoO3 has eluded description for decades despite concerted theoretical and experimental effort. In this study, we approach this problem using fully charge self-consistent density functional theory + embedded dynamical mean field theory (DFT+DMFT). We show from first principles that LaCoO3 cannot be described by a single, pure spin state at any temperature. Instead, we observe a gradual change in the population of higher-spin multiplets with increasing temperature, with the high-spin multiplets being excited at the onset of the spin-state transition followed by the intermediate-spin multiplets being excited at the metal-insulator-transition temperature. We explicitly elucidate the critical role of lattice expansion and oxygen octahedral rotations in the spin-state transition. We also reproduce, from first principles, that the spin-state transition and the metal-insulator transition in LaCoO3 occur at different temperature scales. In addition, our results shed light on the importance of electronic entropy in driving the spin-state transition, which has so far been ignored in all first-principles studies of this material.

Graphene quantum dots /LaCoO3/attapulgite heterojunction photocatalysts with improved photocatalytic activity

International Nuclear Information System (INIS)

Zhu, Wei; Li, Xiazhang

2017-01-01

A new nanocomposite of graphene quantum dots/LaCoO 3 /attapulgite (GQDs/LaCoO 3 /ATP) was prepared by a facile impregnation method and was applied to degradation of the organic pollutants as photocatalyst under visible light irradiation. Multiple techniques were used to characterize the structures, morphologies and photocatalytic activities of samples. The photocatalytic activity of the GQDs/LaCoO 3 /ATP nanocomposites was effectively evaluated using Methylene blue (MB), antibiotic agent chlortetracycline (CHL) and tetracycline hydrochloride (TC). The as-synthesized GQDs/LaCoO 3 /ATP nanocomposites exhibited higher photocatalytic activities than LaCoO 3 /ATP, which showed a broad spectrum of photocatalytic degradation activity. The results of ESR and free radicals trapping experiments indicated that circle OH and h + were the main species for the photocatalytic degradation. GQDs played a significant role in the photocatalytic activity improvement of LaCoO 3 /ATP, increasing the visible light absorption, slowing the recombination and improving the charge transfer. (orig.)

Graphene quantum dots /LaCoO3/attapulgite heterojunction photocatalysts with improved photocatalytic activity

Science.gov (United States)

Zhu, Wei; Li, Xiazhang

2017-04-01

A new nanocomposite of graphene quantum dots/LaCoO3/attapulgite (GQDs/LaCoO3/ATP) was prepared by a facile impregnation method and was applied to degradation of the organic pollutants as photocatalyst under visible light irradiation. Multiple techniques were used to characterize the structures, morphologies and photocatalytic activities of samples. The photocatalytic activity of the GQDs/LaCoO3/ATP nanocomposites was effectively evaluated using Methylene blue (MB), antibiotic agent chlortetracycline (CHL) and tetracycline hydrochloride (TC). The as-synthesized GQDs/LaCoO3/ATP nanocomposites exhibited higher photocatalytic activities than LaCoO3/ATP, which showed a broad spectrum of photocatalytic degradation activity. The results of ESR and free radicals trapping experiments indicated that • OH and h+ were the main species for the photocatalytic degradation. GQDs played a significant role in the photocatalytic activity improvement of LaCoO3/ATP, increasing the visible light absorption, slowing the recombination and improving the charge transfer.

Hole spectral functions in lightly doped quantum antiferromagnets

Science.gov (United States)

Kar, Satyaki; Manousakis, Efstratios

2011-11-01

We study the hole and magnon spectral functions as a function of hole doping in the two-dimensional t-J and t-t'-t''-J models working within the limits of spin-wave theory by linearizing the hole-spin-deviation interaction and by adapting the noncrossing approximation. We find that the staggered magnetization decreases rather rapidly with doping and it goes to zero at a few percent of hole concentration in both t-J and t-t'-t''-J models. Furthermore, our results show that the residue of the quasiparticle peak at G⃗=(±π/2,±π/2) decreases very rapidly with doping. We also find pockets centered at G⃗, (i) with an elliptical shape with large eccentricity along the antinodal direction in the case of the t-J model and (ii) with an almost circular shape in the case of the t-t'-t''-J model. Last, we show that the spectral intensity distribution in the doped antiferromagnet has a waterfall-like pattern along the nodal direction of the Brillouin zone, a feature that is also seen in angle-resolved photoemission spectroscopy measurements.

Numerical simulation of kinetic demixing and decomposition in a LaCoO3-δ oxygen membrane under an oxygen potential gradient

DEFF Research Database (Denmark)

Ta, Na; Chen, Ming; Zhang, Lijun

2018-01-01

A composition- and temperature-dependent mobility database of all ionic species in the LaCoO3-δ phase was developed and combined with a La-Co-O thermodynamic database to simulate kinetic demixing and partial decomposition in LaCoO3-δ oxygen membranes operated under a 0.0001/0.21 bar oxygen partial...... pressure difference at 1073 K for 1 year. Formation of La2O3, Co3O4 and CoO phases across the membrane is predicted. The kinetic demixing process can be divided into two stages, namely, establishment of the oxygen potential gradient (fast) and demixing of the cations (slow); the former is controlled...... by the mobility of oxygen ions, and the latter is determined by the higher mobility of Co ions as compared to the La ion in the ABO3-type perovskite. A drift motion of both oxide surfaces towards the high PO2 side occurs with the movement of cations....

Cobalt spin states and hyperfine interactions in LaCoO3 investigated by LDA+U calculations

Science.gov (United States)

Leighton, C.; Hsu, H.; Blaha, P.; Wentzcovitch, R. M.

2010-12-01

The spin states of cobalt ions in the bulk and epitaxial-thin-film lanthanum cobaltite (LaCoO3) have been controversial for years. The controversial point is mainly the presence of intermediate-spin (IS) Co in the temperature range of 0-85 K. In this region, bulk LaCoO3 experiences a crossover from a diamagnetic to a paramagnetic phase, and the thin-film LaCoO3 is ferromagnetic and insulator. An approach to probe the Co spin state is thus of interest. With a series of LDA+U calculations, we have demonstrated that the electric field gradient (EFG) at the Co nucleus can be used as a fingerprint to identify the spin state of the Co ion in each case. Therefore, in principle, the spin state of the Co ion can be unambiguously determined from nuclear magnetic resonance (NMR) spectra. Our calculations also suggest that the presence of IS Co in this temperature range is unlikely, based not only on its relatively higher energy, but also on its associated conducting band structure incompatible with the measured insulating conductivity. This work was primarily supported by the MRSEC Program of NSF under Awards Number DMR-0212302 and DMR-0819885, and partially supported by NSF under ATM-0428774 (V-Lab), EAR-1019853, and EAR-0810272. The computations were performed mainly at the Minnesota Supercomputing Institute (MSI).

Prediction of phonon-mediated superconductivity in hole-doped black phosphorus

Science.gov (United States)

Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

2018-01-01

We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency B3g1 optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

Hole-induced d"0 ferromagnetism enhanced by Na-doping in GaN

International Nuclear Information System (INIS)

Zhang, Yong; Li, Feng

2017-01-01

The d"0 ferromagnetism in wurtzite GaN is investigated by the first-principle calculations. It is found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga vacancy and Na doping can introduce holes into GaN. However, Ga vacancy has a high formation energy, and is thus unlikely to occur in a significant concentration. In contrast, Na doping has relatively low formation energy. Under N-rich growth condition, Na doping with a sufficient concentration can be achieved, which can induce half-metallic ferromagnetism in GaN. Moreover, the estimated Curie temperature of Na-doped GaN is well above the room temperature. - Highlights: • Hole-induced ferromagnetism in GaN is confirmed. • Both Ga Vacancy and Na-doping can introduce hole into GaN. • The concentration of Ga vacancy is too low to induce detectable ferromagnetism. • Na-doped GaN is a possible ferromagnet with a high curie-temperature.

Dynamical spin susceptibility of electron-doped high-Tc cuprates. Comparison with hole-doped systems

International Nuclear Information System (INIS)

Suzuki, Atsuo; Mutou, Tetsuya; Tanaka, Syunsuke; Hirashima, Dai S.

2010-01-01

The magnetic excitation spectrum of electron-doped copper oxide superconductors is studied by calculating the dynamical spin susceptibility of the two-dimensional Hubbard model in which a d x2-y2 -wave superconducting order parameter is assumed. The spectrum of electron-doped systems is compared with that of hole-doped systems, and the relationship between the frequency at which a peak grows in the spectrum and the superconducting energy gap at a hot spot is investigated. A peak may be observed even when the magnetic resonance condition is not exactly satisfied. We find that, in the electron-doped systems, the resonance condition is less likely to be satisfied than in the hole-doped systems because of the small density of states around the hot spots, and the peak frequency is close to twice the gap magnitude at the hot spots. (author)

Optical and magneto-optical properties of the electron-doped and hole-doped C{sub 82} crystal

Energy Technology Data Exchange (ETDEWEB)

Rostampour, E., E-mail: el_rostampour@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Koohi, A. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, Tehran (Iran, Islamic Republic of)

2015-01-15

The optical and magnetic properties of the doped C{sub 82} crystal have been investigated by Su–Schrieffer–Heeger (SSH) model, which is based on the Ewald method. When the C{sub 82} molecule is doped with one electron (or hole), a single electron is remained in the energy level that affects the optical and magnetic properties of the C{sub 82} crystal. The lattice and electronic structures of C{sub 82} changed with doping electron (or hole) in the molecule of C{sub 82}. Therefore, polarons are predicted in doped fullerenes. The obtained results showed that the dielectric tensor of the C{sub 82} crystal increased with doping electron (or hole) in the molecule of C{sub 82}. The spectral shapes of the dielectric tensor, circular dichroism and birefringence coefficient of the C{sub 82} crystal turn out to be determined mainly by the geometrical distributions of the pentagons in the fullerene structures.

Hole states in diamond p-delta-doped field effect transistors

International Nuclear Information System (INIS)

Martinez-Orozco, J C; Rodriguez-Vargas, I; Mora-Ramos, M E

2009-01-01

The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

Hole states in diamond p-delta-doped field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Martinez-Orozco, J C; Rodriguez-Vargas, I [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina con Paseo la Bufa S/N, CP 98060 Zacatecas, ZAC. (Mexico); Mora-Ramos, M E, E-mail: jcmover@correo.unam.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, CP 62209 Cuernavaca, MOR. (Mexico)

2009-05-01

The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

KAUST Repository

Matsuoka, Hirofumi; Kanahashi, Kaito; Tanaka, Naoki; Shoji, Yoshiaki; Li, Lain-Jong; Pu, Jiang; Ito, Hiroshi; Ohta, Hiromichi; Fukushima, Takanori; Takenobu, Taishi

2018-01-01

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

KAUST Repository

Matsuoka, Hirofumi

2018-01-18

Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

The unusual magnetism of nanoparticle LaCoO3

International Nuclear Information System (INIS)

Durand, A M; Belanger, D P; Hamil, T J; Ye, F; Chi, S; Fernandez-Baca, J A; Booth, C H; Abdollahian, Y; Bhat, M

2015-01-01

Bulk and nanoparticle powders of LaCoO 3 (LCO) were synthesized and their magnetic and structural properties were studied using SQUID magnetometry and neutron diffraction. The bulk and large nanoparticles exhibit weak ferromagnetism (FM) below T ≈ 85 K and a crossover from strong to weak antiferromagnetic (AFM) correlations near a transition expressed in the lattice parameters, T o ≈40 K. This crossover does not occur in the smallest nanoparticles; instead, the magnetic behavior is predominantly ferromagnetic. The amount of FM in the nanoparticles depends on the amount of Co 3 O 4 impurity phase, which induces tensile strain on the LCO lattice. A core-interface model is introduced, with the core region exhibiting the AFM crossover and with FM in the interface region near surfaces and impurity phases. (paper)

Investigation of the Role of Hole Doping in Different High Temperature Superconducting Systems Using XANES Technique

International Nuclear Information System (INIS)

Hamdan, N.M.; Hasan, A.; Faiz, M.; Salim, M.A.; Hussain, Z.

2004-01-01

X-ray Absorption Near edge Structure (XANES) technique was used to study the role of hole doping in F-doped Hg-1223 and the Ce-doped Tl-1223. Oxygen k-edge and Cu L2,3-edge structures were thoroughly investigated. The pre-edge features of O k-edge spectra, as a function of doping, reveal important information about the projected local density of unoccupied states on the O sites in the region close to the absorption edge, which is a measure of O 2p hole concentration in the valance band. Furthermore, the Cu L2,3 absorption edge provides useful information about the valance state of Cu which is also related to the hole state in the CuO 2 planes. In this work, we will discuss these XANES results in these systems and correlate the observed improvements in the superconducting properties to the electronic structure in the CuO2 planes

In Situ Observation of Oxygen Vacancy Dynamics and Ordering in the Epitaxial LaCoO3 System.

Science.gov (United States)

Jang, Jae Hyuck; Kim, Young-Min; He, Qian; Mishra, Rohan; Qiao, Liang; Biegalski, Michael D; Lupini, Andrew R; Pantelides, Sokrates T; Pennycook, Stephen J; Kalinin, Sergei V; Borisevich, Albina Y

2017-07-25

Vacancy dynamics and ordering underpin the electrochemical functionality of complex oxides and strongly couple to their physical properties. In the field of the epitaxial thin films, where connection between chemistry and film properties can be most clearly revealed, the effects related to oxygen vacancies are attracting increasing attention. In this article, we report a direct, real-time, atomic level observation of the formation of oxygen vacancies in the epitaxial LaCoO 3 thin films and heterostructures under the influence of the electron beam utilizing scanning transmission electron microscopy (STEM). In the case of LaCoO 3 /SrTiO 3 superlattice, the formation of the oxygen vacancies is shown to produce quantifiable changes in the interatomic distances, as well as qualitative changes in the symmetry of the Co sites manifested as off-center displacements. The onset of these changes was observed in both the [100] pc and [110] pc orientations in real time. Additionally, annular bright field images directly show the formation of oxygen vacancy channels along [110]pc direction. In the case of 15 u.c. LaCoO 3 thin film, we observe the sequence of events during beam-induced formation of oxygen vacancy ordered phases and find them consistent with similar processes in the bulk. Moreover, we record the dynamics of the nucleation, growth, and defect interaction at the atomic scale as these transformations happen. These results demonstrate that we can track dynamic oxygen vacancy behavior with STEM, generating atomic-level quantitative information on phase transformation and oxygen diffusion.

The effect of electron and hole doping on the thermoelectric properties of shandite-type Co3Sn2S2

Science.gov (United States)

Mangelis, Panagiotis; Vaqueiro, Paz; Jumas, Jean-Claude; da Silva, Ivan; Smith, Ronald I.; Powell, Anthony V.

2017-07-01

Electron and hole doping in Co3Sn2S2, through chemical substitution of cobalt by the neighbouring elements, nickel and iron, affects both the structure and thermoelectric properties. Electron doping to form Co3-xNixSn2S2 (0≤x≤3) results in an expansion of the kagome layer and materials become increasingly metallic as cobalt is substituted. Conversely, hole doping in Co3-xFexSn2S2 (0≤x≤0.6) leads to a transition from metallic to n-type semiconducting behaviour at x=0.5. Iron substitution induces a small increase in the separation between the kagome layers and improves the thermoelectric performance. Neutron diffraction data reveal that substitution occurs at the Co 9(d) site in a disordered fashion. Mössbauer spectroscopy reveals two iron environments with very different isomer shifts, which may be indicative of a mixed-valence state, while Sn exhibits an oxidation state close to zero in both series. Co2.6Fe0.4Sn2S2 exhibits a maximum figure-of-merit, ZT=0.2 at 523 K while Co2.4Fe0.6Sn2S2 reaches a power factor of 10.3 μW cm-1 K-2 close to room temperature.

Novel sol–gel methodology to produce LaCoO3 by acrylamide polymerization assisted by γ-irradiation

International Nuclear Information System (INIS)

Carabalí, G.; Chavira, E.; Castro, I.; Bucio, E.; Huerta, L.; Jiménez-Mier, J.

2012-01-01

In this paper we report the synthesis of LaCoO 3 (LCO) nano-particles with two methodologies: the conventional sol–gel reaction of acrylamide (AA) polymerization using a cross-linking agent (methylenebisacrylamide or MBA) with the activation of the polymerization reaction by thermo-chemical initiator (azobisisobutyrnitrile or AIBN). The second was a novel sol–gel methodology in which the polymerization of AA monomers was done without MBA and the initiation was achieved by gamma radiation. With thermochemical initiator a xerogel with a foam and porous structure was obtained, while the gamma-irradiation of the mixture leads to the formation of a compact resin with entrapped cations. X-ray diffraction (XRD) shows that formation of the product begins around 500 °C and according to analysis of microscopy images of powders calcined in 700 °C the average sizes of particles are 20 nm and 42 nm for samples obtained using γ-irradiation and AIBN as initiators, respectively. TEM images also show differences in particle morphology. Those synthesized using AIBN as initiator are dispersed, while those with γ-irradiation are in aggregates. - Highlights: ► LaCoO 3 nano-crystallites were synthesized by two different polyacrylamide sol–gel processes. ► Acrylamide polymerization reaction initiated by gamma irradiation and by thermo-chemical agent. ► Polymerization reaction with thermo-chemical initiator produces a porous gel. ► Xerogel obtained using gamma radiation is compact resin. ► LaCoO 3 powders produced by both methods differ in the size and morphology of particles.

Coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compound

International Nuclear Information System (INIS)

Lu, T.P.; Wu, C.C.; Chou, W.H.; Lan, M.D.

2010-01-01

The magnetic and superconducting properties of the Sm-doped FeAs-based superconducting compound were investigated under wide ranges of temperature and magnetic field. After the systematical magnetic ion substitution, the superconducting transition temperature decreases with increasing magnetic moment. The hysteresis loop of the La 0.87-x Sm x Sr 0.13 FeAsO sample shows a superconducting hysteresis and a paramagnetic background signal. The paramagnetic signal is mainly attributed to the Sm moments. The experiment demonstrates that the coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compounds is possible. Unlike the electron doped FeAs-based superconducting compounds SmFeAsOF, the hole doped superconductivity is degraded by the substitution of La by Sm. The hole-doped and electron-doped sides are not symmetric.

Vortex (particle) and antivortex (hole) doping into superconducting network

International Nuclear Information System (INIS)

Ishida, Takekazu; Shimizu, Makoto; Matsushima, Yoshiaki; Hayashi, Masahiko; Ebisawa, Hiromichi; Sato, Osamu; Kato, Masaru; Satoh, Kazuo

2007-01-01

Superconducting finite-sized Pb square networks with 10 x 10 square holes fabricated by electron beam lithography have been investigated in view of particle (vortex) doping into superconducting networks. Vortex image observations were carried out by a SQUID microscope to compare with predictions from the Ginzburg-Landau theory. We found the exactly reversed pattern between the vortex-doping x and the antivortex doping 1 - x into the fully occupied network (x = 1/4)

Origin of the net magnetic moment in LaCoO3

Science.gov (United States)

Kaminsky, G. M.; Belanger, D. P.; Ye, F.; Fernandez-Baca, J. A.; Wang, J.; Matsuda, M.; Yan, J.-Q.

2018-01-01

We use polarized neutron scattering to characterize the Bragg scattering intensity below TC=89.5 K at the (1,0,0) pseudocubic nuclear Bragg point of LaCoO3. Upon cooling in a field (FC), a net magnetic moment is apparent in Bragg scattering intensity, just as it was in previous magnetization measurements. Critical behavior associated with the net moment near TC upon cooling in small applied fields rapidly rounds with increasing field strength. We show, using a mean-field calculation, that this net moment can develop in a metastable state that forms upon FC, even when all the interactions in the system are antiferromagnetic.

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao

2017-04-12

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlö gl, Udo; Huang, Wei

2017-01-01

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Room temperature d (0) ferromagnetism in hole doped Y2O3: widening the choice of host to tailor DMS.

Science.gov (United States)

Chakraborty, Brahmananda; Ramaniah, Lavanya M

2016-08-24

Transition metal-free-ferromagnetism in diluted magnetic semiconductors (DMS) is of much current interest in view of the search for more efficient DMS materials for spintronics applications. Our DFT results predict for the first time, that impurities from group1A (Li(+), Na(+), K(+)) doped on Y2O3 can induce a magnetic signature with a magnetic moment around 2.0 μ B per defect at hole concentrations around 1.63  ×  10(21) cm(-3), which is one order less than the critical hole density of ZnO with ferromagnetic coupling large enough to promote room temperature ferromagnetism. The induction of room temperature ferromagnetism by hole doping with an impurity atom from group 1A, which injects two holes per defect in the system, implies that the recommendation of three holes per defect given in the literature, which puts a restriction on the choice of host material and the impurity, is not a necessary criterion for hole induced room temperature ferromagnetism. DFT simulations with the generalized gradient approximation (GGA), confirmed by the more sophisticated hybrid functional, Heyd-Scuseria-Ernzerhof (HSE06), predict that the magnetic moment is mostly contributed by O atoms surrounding the impurity atom and the magnetic moment scale up with impurity concentration which is a positive indicator for practical applications. We quantitatively and extensively demonstrate through the analysis of the density of states and ferromagnetic coupling that the Stoner criterion is satisfied by pushing the Fermi level inside the valence band to activate room temperature ferromagnetism. The stability of the structure and the persistence of ferromagnetism at room temperature were demonstrated by ab initio MD simulations and computation of Curie temperature through the mean field approximation. This study widens the choice of host oxides to tailor DMS for spintronics applications.

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

KAUST Repository

Yan, Long

2018-05-03

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

KAUST Repository

Yan, Long; Zhang, Yuantao; Han, Xu; Deng, Gaoqiang; Li, Pengchong; Yu, Ye; Chen, Liang; Li, Xiaohang; Song, Junfeng

2018-01-01

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

On the stability of the ternary phases in the La-Co-O system and the nonstoichiometry of lanthanum cobaltate

International Nuclear Information System (INIS)

Seppaenen, Matti

1979-01-01

The crystal structure of La 4 Co 3 O 10 , which is a new ternary phase identified in the present study, was determined by means of X-ray diffraction. It has an orthorhombic symmetry and its space group is most likely Fsub(mmm) (face-centered). On the basis of the thermodynamical studies of the La-Co-O system, the stable ternary phases are LaCoO 3 , La 4 Co 3 O 10 and La 2 CoO 4 . The stability limits of these phases were determined as a function of oxygen activity and temperature, and their molar Gibbs standard formation functions were calculated. Electrons, e', and electron holes, hsup(.), are majority defects in lanthanum cobaltate and their concentrations are exceptionally high and nearly constant in the temperature range 1178 - 1295 K. Under thermodynamically well defined conditions the nonstoichiometry of lanthanum cobaltate was determined as a function of oxygen activity and temperature by coulometric titration. In the oxygen partial pressure and temperature range of the present study the oxygen vacancies were ionic minority defects dependent on the activity of oxygen. Due to the high concentration of electronic defects the oxygen vancancy concentration increases high at low oxygen pressures. Oxygen vacancies behave ideally in lanthanum cobaltate i.e. obey Henry's law when their concentrations are <=0.01. (author)

Prediction of phonon-mediated superconductivity in hole-doped black phosphorus.

Science.gov (United States)

Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

2018-01-10

We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB 2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency [Formula: see text] optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

Doping Phosphorene with Holes and Electrons through Molecular Charge Transfer.

Science.gov (United States)

Vishnoi, Pratap; Rajesh, S; Manjunatha, S; Bandyopadhyay, Arkamita; Barua, Manaswee; Pati, Swapan K; Rao, C N R

2017-11-03

An important aspect of phosphorene, the novel two-dimensional semiconductor, is whether holes and electrons can both be doped in this material. Some reports found that only electrons can be preferentially doped into phosphorene. There are some theoretical calculations showing charge-transfer interaction with both tetrathiafulvalene (TTF) and tetracyanoethylene (TCNE). We have carried out an investigation of chemical doping of phosphorene by a variety of electron donor and acceptor molecules, employing both experiment and theory, Raman scattering being a crucial aspect of the study. We find that both electron acceptors and donors interact with phosphorene by charge-transfer, with the acceptors having more marked effects. All the three Raman bands of phosphorene soften and exhibit band broadening on interaction with both donor and acceptor molecules. First-principles calculations establish the occurrence of charge-transfer between phosphorene with donors as well as acceptors. The absence of electron-hole asymmetry is noteworthy. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of noble metal doping on the structural properties of lanthanum cobaltite

International Nuclear Information System (INIS)

Dharmadhikari, Dipti V.; Athawal, Anjali A.

2016-01-01

Pristine and Noble metal (Ag and Pd) doped lanthanum cobaltite samples have been synthesised by Hydrothermal method. Lanthanum in the A-Site and Co at B-site of Lanthanum cobaltite (LaCoO 3 ) perovskites were partially doped by silver and palladium (4%). Crystal structure analysis revealed that the hydrothermal synthesis led to the formation of pure nanocrystalline perovskite structure. Morphological analysis of the samples shows that the noble metal doping affects the morphology of the samples. Pristine sample shows spherical to oval shaped particles while the doping results in the formation of irregular shaped, spherical and rod shaped particles. Silver doping results in the agglomeration of particles. The particles were observed to be fused with each other to form rod shaped structures in case of palladium doped samples. (author)

Hole-doping effects on the magnetic properties of the La4Ba2Cu2O10 ferromagnet

International Nuclear Information System (INIS)

Mizuno, F.; Masuda, H.; Hirabayashi, I.; Tanaka, S.; Mochiku, T.; Asano, H.; Izumi, F.

1992-01-01

Hole-doping effects by Ba substitution for La in La 4-x Ba 2+x Cu 2 O 10 (0 ≤ x ≤ 1) have been studied to explore the possibilities of its metal-insulator transition and superconductivity. We have not detected any symptoms for metal-insulator transition, but found certain evidence for the hole-doping effect. We observed the dilution effect of Cu 2+ spin by non-magnetic Cu 3+ on the ferromagnetic transition temperature and the reduction of effective magnetic moment. (orig.)

Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

Science.gov (United States)

Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

2008-10-01

The free hole carriers in GaN have been limited to concentrations in the low 1018cm-3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ˜10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ˜1.5×1019cm-3.

Towards low-dimensional hole systems in Be-doped GaAs nanowires

DEFF Research Database (Denmark)

Ullah, A. R.; Gluschke, J. G.; Jeppesen, Peter Krogstrup

2017-01-01

-gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good......GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly confined 0D and 1D hole systems with strong spin–orbit effects, motivating...... our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top...

Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

International Nuclear Information System (INIS)

Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

2008-01-01

The free hole carriers in GaN have been limited to concentrations in the low 10 18 cm -3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5x10 19 cm -3

Electronic structure and O vacancy formation/migration in La0.825(Mg/Ca/Ba)0.125CoO3

KAUST Repository

Omotayo Akande, Salawu

2016-05-05

The effect of A-site hole doping (Mg2+, Ca2+ or Ba2+) on the electronic and magnetic properties as well as the O vacancy formation and migration in perovskite LaCoO3 is studied using first-principles calculations. All three dopants are found to facilitate O vacancy formation. Substitution of La3+ with Ba2+/Mg2+ yields the lowest O vacancy formation energy for low/intermediate spin Co, implying that not only the structure but also the spin state of Co is a key parameter. Only for low spin Co the ionic radius is correlated with the O migration barrier. Enhanced migration for intermediate spin Co is ascribed to the availability of additional space at the transition state. © CopyrightEPLA, 2016.

Localization of holes near charged defects in orbitally degenerate, doped Mott insulators

Science.gov (United States)

Avella, Adolfo; Oleś, Andrzej M.; Horsch, Peter

2018-05-01

We study the role of charged defects, disorder and electron-electron (e-e) interactions in a multiband model for t2g electrons in vanadium perovskites R1-xCaxVO3 (R = La,…,Y). By means of unrestricted Hartree-Fock calculations, we find that the atomic multiplet structure persists up to 50% Ca doping. Using the inverse participation number, we explore the degree of localization and its doping dependence for all electronic states. The observation of strongly localized wave functions is consistent with our conjecture that doped holes form spin-orbital polarons that are strongly bound to the charged Ca2+ defects. Interestingly, the long-range e-e interactions lead to a discontinuity in the wave function size across the chemical potential, where the electron removal states are more localized than the addition states.

Spin-Glass Transition and Giant Paramagnetism in Heavily Hole-Doped Bi2Sr2Co2Oy

Science.gov (United States)

Hsu, Hung Chang; Lee, Wei-Li; Lin, Jiunn-Yuan; Young, Ben-Li; Kung, Hsiang-Hsi; Huang, Jian; Chou, Fang Cheng

2014-02-01

Hole-doped single crystals of misfit-layered cobaltate Bi2-xPbxSr2-zCo2Oy (x = 0-0.61, y = 8.28-8.62, and z = 0.01-0.22) have been successfully grown using the optical floating-zone method. Heavier hole doping has been achieved through both Pb substitution in the Bi site and the more effective Sr vacancy formation. The Co4+ : Co3+ ratio can be raised significantly from its original ˜1 : 1 to 4.5 : 1, as confirmed by iodometric titration. A spin-glass transition temperature of Tg ˜ 70 K is confirmed by ac susceptibility measurement when the Co4+ : Co3+ ratio becomes higher than 2 : 1, presumably owing to the significantly increased probability of triangular geometrical frustration among antiferromagnetically coupled localized Co4+ spins.

Enrichment of Pyrrolic Nitrogen by Hole Defects in Nitrogen and Sulfur Co-Doped Graphene Hydrogel for Flexible Supercapacitors.

Science.gov (United States)

Tran, Ngoc Quang; Kang, Bong Kyun; Woo, Moo Hyun; Yoon, Dae Ho

2016-08-23

The effect of the doping configuration and concentration of nitrogen (N) and sulfur (S) on the electrochemical performance of 3 D N and S co-doped hole defect graphene hydrogel (NS-HGH) electrodes is investigated. Surprisingly, by introducing a hole defect on the graphene surface, the difference in the doping concentrations of N and S can be used to effectively modulate the electrochemical behavior of the NS-HGH. The hole defects provide a rapid ion diffusion path. Finally, we showed that the intriguing specific capacitance (536 F g(-1) ) of the NS-HGH could enhance the overall performance of the pseudocapacitance and electric double layer capacitance. The rational design of the NS-HGH-based flexible solid state supercapacitor results in not only outstanding electrochemical performance with a maximum energy density of 14.8 Wh kg(-1) and power density of 5.2 KW kg(-1) but also in extraordinary mechanical flexibility and excellent cycle stability. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modified magnetic anisotropy at LaCoO3/La0.7Sr0.3MnO3 interfaces

Directory of Open Access Journals (Sweden)

M. Cabero

2017-09-01

Full Text Available Controlling magnetic anisotropy is an important objective towards engineering novel magnetic device concepts in oxide electronics. In thin film manganites, magnetic anisotropy is weak and it is primarily determined by the substrate, through induced structural distortions resulting from epitaxial mismatch strain. On the other hand, in cobaltites, with a stronger spin orbit interaction, magnetic anisotropy is typically much stronger. In this paper, we show that interfacing La0.7Sr0.3MnO3 (LSMO with an ultrathin LaCoO3 (LCO layer drastically modifies the magnetic anisotropy of the manganite, making it independent of the substrate and closer to the magnetic isotropy characterizing its rhombohedral structure. Ferromagnetic resonance measurements evidence a tendency of manganite magnetic moments to point out-of-plane suggesting non collinear magnetic interactions at the interface. These results may be of interest for the design of oxide interfaces with tailored magnetic structures for new oxide devices.

Simulation of hole-mobility in doped relaxed and strained Ge layers

Science.gov (United States)

Watling, Jeremy R.; Riddet, Craig; Chan, Morgan Kah H.; Asenov, Asen

2010-11-01

As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limits of their performance with scaling, alternative channel materials are being considered to maintain performance in future complementary metal-oxide semiconductor technology generations. Thus there is renewed interest in employing Ge as a channel material in p-MOSFETs, due to the significant improvement in hole mobility as compared to Si. Here we employ full-band Monte Carlo to study hole transport properties in Ge. We present mobility and velocity-field characteristics for different transport directions in p-doped relaxed and strained Ge layers. The simulations are based on a method for over-coming the potentially large dynamic range of scattering rates, which results from the long-range nature of the unscreened Coulombic interaction. Our model for ionized impurity scattering includes the affects of dynamic Lindhard screening, coupled with phase-shift, and multi-ion corrections along with plasmon scattering. We show that all these effects play a role in determining the hole carrier transport in doped Ge layers and cannot be neglected.

Hole transport and photoluminescence in Mg-doped InN

Energy Technology Data Exchange (ETDEWEB)

Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

2010-03-24

Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

Effects of pentacene-doped PEDOT:PSS as a hole-conducting layer on the performance characteristics of polymer photovoltaic cells

OpenAIRE

Kim, Hyunsoo; Lee, Jungrae; Ok, Sunseong; Choe, Youngson

2012-01-01

We have investigated the effect of pentacene-doped poly(3,4-ethylenedioxythiophene:poly(4-styrenesulfonate) [PEDOT:PSS] films as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the amount of pentacene and the annealing temperature of pentacene-doped PEDOT:PSS layer, the changes of performance characteristics were evaluated. Pentacene-doped PEDOT:PSS thin films were prepared by dissolving pentacene in 1-methyl-2-pyrrolidinone solvent and mixing with PEDO...

Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Swensen, James S.; Wang, Liang (Frank); Rainbolt, James E.; Koech, Phillip K.; Polikarpov, Evgueni; Gaspar, Daniel J.; Padmaperuma, Asanga B.

2012-12-01

We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.

Thickness-dependent magneto-optical effects in hole-doped GaS and GaSe multilayers: a first-principles study

Science.gov (United States)

Li, Fei; Zhou, Xiaodong; Feng, Wanxiang; Fu, Botao; Yao, Yugui

2018-04-01

Recently, two-dimensional (2D) GaS and GaSe nanosheets were successfully fabricated and the measured electronic, mechanical, and optoelectronic properties are excellent. Here, using the first-principles density functional theory, we investigate the magnetic, optical, and magneto-optical (MO) Kerr and Faraday effects in hole-doped GaS and GaSe multilayers. GaS and GaSe monolayers (MLs) manifest ferromagnetic ground states by introducing even a small amount of hole doping, whereas the magnetism in GaS and GaSe multilayers are significantly different under hole doping. Our results show that ferromagnetic states can be easily established in GaS bilayers and trilayers under proper hole doping, however, most of GaSe multilayers are more favorable to nonmagnetic states. The magnetic moments in GaS multilayers are weakened remarkably with the increasing of thin film thickness and are negligible more than three MLs. This leads to the thickness dependence of MO Kerr and Faraday effects. Furthermore, the MO effects strongly depend on the doping concentration and therefore are electrically controllable by adjusting the number of holes via gate voltage. The substrate effects on the MO properties are also discussed. Combining the unique MO and other interesting physical properties make GaS and GaSe a superior 2D material platform for semiconductor MO and spintronic nanodevices.

Synthesis, structure and thermoelectric properties of La1-xNaxCoO3 ...

Indian Academy of Sciences (India)

29

system. Here we report the synthesis of Na+-ions doped LaCoO3 samples by the nitrate-citrate ... product retains uniform cation distribution even at low concentrations. .... through the clamping blocks and the voltage drop is measured by the Pt ...

Optimal thickness of hole transport layer in doped OLEDs

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.C.; Zhou, J.; Zhao, J.M.; Zhang, S.T.; Zhan, Y.Q.; Wang, X.Z.; Wu, Y.; Ding, X.M.; Hou, X.Y. [Fudan University, Surface Physics Laboratory (National Key Laboratory), Shanghai (China)

2006-06-15

Current-voltage (I-V) and electroluminescence (EL) characteristics of organic light-emitting devices with N,N'-Di-[(1-naphthalenyl)-N,N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine (NPB) of various thicknesses as the hole transport layer, and tris(8-hydroxyquinoline)aluminum (Alq{sub 3}) selectively doped with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) as the electron transport layer, have been investigated. A trapped charge induced band bend model is proposed to explain the I-V characteristics. It is suggested that space charge changes the injection barrier and therefore influences the electron injection process in addition to the carrier transport process. Enhanced external quantum efficiency of the devices due to the electron blocking effect of an inserted NPB layer is observed. The optimal thickness of the NPB layer is experimentally determined to be 12{+-}3 nm in doped devices, a value different from that for undoped devices, which is attributed to the electron trap effect of DCM molecules. This is consistent with the result that the proportion of Alq{sub 3} luminescence in the total electroluminescence (EL) spectra increases with NPB thickness up to 12 nm under a fixed bias. (orig.)

Aspects of hole-burning and spectro-temporal holography in molecular doped solids

International Nuclear Information System (INIS)

Galap, J.-P.

2006-01-01

The persistent spectral hole-burning (PSHB) phenomenon has been known since 1974. It is still an important research area for the study of the intimacy of complex molecular systems in the solid state, revealing high-resolution spectra, photophysics, photochemistry, and dynamics of molecular doped amorphous media, organic as well as inorganic. From another point of view, PSHB allows the engraving of any spectral structures in the inhomogeneous absorption band profile of molecular doped amorphous hosts or ion doped crystals cooled down to liquid helium temperatures. Therefore, a PSHB material is programmable in the spectral domain and consequently it can be transformed in an optical processor capable of achieving user-defined optical functions. Some aspects of both fields are illustrated in the present paper. Concerning the search for efficient PSHB materials, the hole-burning performances and the photophysics of polymer and xerogel based systems are compared. The problem of high-temperature persistent spectral hole-burning materials and the search for new frequency selective photosensitive systems for fast optical pulse processing at 800 nm are considered. Regarding the points treated, inorganic hosts based on silicate xerogels or porous glasses have shown the best results. Moreover, by combining inorganic and organic capabilities or by grafting organic species to the host, hybrid xerogels have not yet revealed all possibilities. Also, the interest of two-photon materials for engraving spectral features with near-infrared or infrared light is developed. As an introduction to possible applications of PSHB material, the basics of spectro-temporal holography are remembered and a demonstrative experiment using a naphthalocyanine-doped polymer film is described, proving that the temporal aberration free recompression of ultrashort light pulses is feasible, therefore opening a way for applications in ultrashort light pulse shaping. Aspects for a comparison between cw hole

Adsorption of CO on the perovskite-type oxide LaCoO3

International Nuclear Information System (INIS)

Tascon, J.M.D.; Gonzalez Tejuca, L.

1980-01-01

In this work the adsorption of CO on LaCoO 3 between 113 and 773 K is studied. Low isosteric heats of adsorption in the temperature range 133-273 K, of 15 to 5 kJ/mol -1 point to physisorption. Between 573 and 648 K, the isosteric heat was 49 kJ/mol -1 , and the entropy values show that the adsorbed species has translational mobility in two dimensions. Adsorption of CO at 673 K and above caused reduction of the bulk. CO adsorption at 298 K gives rise to IR bands at 1495, 1450, 1175, 1110, 1070 and 850 cm -1 , attributed to bidentate carbonates. CO adsorption at 298 K on a surface with preadsorbed O 2 was found to be practically equal to the adsorption measured on a clean surface. On the contrary, preadsorbtion of CO 2 decreased the subsequent adsorption of CO to 1.2%. It is concluded that CO and CO 2 and adsorb on surface O 2- ions while oxygen adsorbs on surface metallic ions (Co 3+ or La 3+ ) of the La CoO 3 . (orig.) [de

Optical decoherence and persistent spectral hole burning in Tm3+:LiNbO3

International Nuclear Information System (INIS)

Thiel, C.W.; Sun, Y.; Boettger, T.; Babbitt, W.R.; Cone, R.L.

2010-01-01

We report studies of decoherence and spectral hole burning for the 794 nm optical transition of thulium-doped lithium niobate. In addition to transient spectral holes due to the 3 H 4 and 3 F 4 excited states of Tm 3+ , persistent spectral holes with lifetimes of up to minutes were observed when a magnetic field of a few hundred Gauss was applied. The observed anti-hole structure identified the hole burning mechanism as population storage in the 169 Tm nuclear hyperfine levels. In addition, the magnetic field was effective in suppressing spectral diffusion, increasing the phase memory lifetime from 11 μs at zero field to 23 μs in a field of 320 Gauss applied along the crystal's c-axis. Coupling between Tm 3+ and the 7 Li and 93 Nb spins in the host lattice was also observed and a quadrupole shift of 22 kHz was measured for 7 Li at 1.7 K. A Stark shift of 18 kHz cm/V was measured for the optical transition with the electric field applied parallel to the c-axis.

Tensile Strain Effects on the Magneto-transport in Calcium Manganese Oxide Thin Films: Comparison with its Hole-doped Counterpart

Science.gov (United States)

Lawson, Bridget; Neubauer, Samuel; Chaudhry, Adeel; Hart, Cacie; Ferrone, Natalie; Houston, David; Yong, Grace; Kolagani, Rajeswari

Magnetoresistance properties of the epitaxial thin films of doped rare earth manganites are known to be influenced by the effect of bi-axial strain induced by lattice mismatch with the substrate. In hole-doped manganites, the effect of both compressive and tensile strain is qualitatively consistent with the expected changes in unit cell symmetry from cubic to tetragonal, leading to Jahn-Teller strain fields that affect the energy levels of Mn3 + energy levels. Recent work in our laboratory on CaMnO3 thin films has pointed out that tetragonal distortions introduced by tensile lattice mismatch strain may also have the effect of modulating the oxygen content of the films in agreement with theoretical models that propose such coupling between strain and oxygen content. Our research focuses on comparing the magneto-transport properties of hole-doped manganite LaCaMnO3 thin films with that of its electron doped counter parts, in an effort to delineate the effects of oxygen stoichiometry changes on magneto-transport from the effects of Jahn-Teller type strain. Towson University Office of Undergraduate Research, Fisher Endowment Grant and Undergraduate Research Grant from the Fisher College of Science and Mathematics, Seed Funding Grant from the School of Emerging technologies and the NSF Grant ECCS 112856.

Easily doped p-type, low hole effective mass, transparent oxides

Science.gov (United States)

Sarmadian, Nasrin; Saniz, Rolando; Partoens, Bart; Lamoen, Dirk

2016-02-01

Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications - i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe.

Atomic structures of Ruddlesden-Popper faults in LaCoO3/SrRuO3 multilayer thin films induced by epitaxial strain

Science.gov (United States)

Wang, Wei; Zhang, Hui; Shen, Xi; Guan, Xiangxiang; Yao, Yuan; Wang, Yanguo; Sun, Jirong; Yu, Richeng

2018-05-01

In this paper, scanning transmission electron microscopy is used to study the microstructures of the defects in LaCoO3/SrRuO3 multilayer films grown on the SrTiO3 substrates, and these films have different thickness of SrRuO3 (SRO) layers. Several types of Ruddlesden-Popper (R.P.) faults at an atomic level are found, and these chemical composition fluctuations in the growth process are induced by strain fields originating from the film-film and film-substrate lattice mismatches. Furthermore, we propose four types of structural models based on the atomic arrangements of the R.P. planar faults, which severely affect the functional properties of the films.

Electron and hole doping effects in Sr{sub 2}FeMoO{sub 6} double perovskites

Energy Technology Data Exchange (ETDEWEB)

Sanchez, D. E-mail: diana.sanchez@icmm.csic.es; Alonso, J.A.; Garcia-Hernandez, M.; Martinez-Lope, M.J.; Casais, M.T.; Martinez, J.L.; Fernandez-Diaz, M.T

2004-05-01

Electron and hole doping effects in the ferromagnetic and structural properties of the double perovskite Sr{sub 2}FeMoO{sub 6} are studied along the series Sr{sub 2-x}La{sub x}FeMoO{sub 6} (0{<=}x{<=}1) and Sr{sub 2-x}FeMoO{sub 6} (0{<=}x{<=}0.4) from neutron powder diffraction and magnetization data. Sr-deficient samples (hole doped) show moderate changes in the structure and both T{sub c} and M{sub s} rapidly decrease with x. On the contrary, a change from tetragonal to monoclinic symmetry and a non monotonic behaviour in T{sub c} is found in the La-substituted series (electron doped)

Strain effect on the magnetic and transport properties of LaCoO3 thin films

Science.gov (United States)

Li, Y.; Peng, S. J.; Wang, D. J.; Wu, K. M.; Wang, S. H.

2018-05-01

LaCoO3 (LCO) has attracted much attention due to the unique magnetic transition and spin transition of Co3+ ions. Epitaxial LCO film exhibits an unexpected ferromagnetism, in contrast to the non-magnetism of bulk LCO. An in-depth study on the property of strained LCO film is of great importance. We have fabricated 30 nm LCO films on various substrates and studied the magnetic and transport properties of films in different strain states (compressed strain for LCO/LaAlO3, tensile strain for LCO/(LaAlO3)0.3(Sr2TaAlO6)0.35, SrTiO3). The in-plane tensiled LCO films exhibit ferromagnetic ground state at 5K and magnetic transition with TC around 85K, while compressed LCO/LaAlO3 film has a negligibly small moment signal. Our results reveal that in-plane tensile strain and tetragonal distortion are much more favorable for stabilizing the FM order in LCO films.

Control of electrical conduction in DNA using hole doping

Science.gov (United States)

Lee, Hea-Yeon; Taniguchi, Masateru; Yoo, K. H.; Otsuka, Youichi; Tanaka, Hidekazu; Kawai, Tomoji

2002-03-01

Control of electrical conduction in DNA using hole doping H.Y.Lee1, M.Taniguchi1, K.H.Yoo2, Y.Otsuka1 H.Tanaka1 and T.Kawai1 1The Institute of Scientific and Industrial Research(ISIR), Osaka University, Osaka, Japan. 2Department of Physics, Younsei University, Seoul, Korea Possible applications of DNA molecules in electronic devices and biosensors were suggested almost ten years ago A DNA structure containing a single type of base pair appears to be a good candidate for conduction along the \\x81E-electron clouds of the stacked bases. There have been lots of investigations on conduction mechanisms of the DNA molecules. However, it is not still clear whether the observed conductions of some DNA molecules come from motions of either ionic charges or other carriers. Although the basic mechanism for DNA-mediated charge transport should be understood for electronic applications, there have been divergent reports on its nature. And I will be present the research for the charge carrier conduction of DNA film under oxygen and iodine gas by using 10¡V100 nm gap. The doping studies using oxygen and iodine gas can provide a definite answer for the carrier conduction mechanism and also a possible method to control the carrier concentration in DNA molecules. Using oxygen and iodine adsorption experiments on the poly (dG)-poly (dC) DNA molecules, we will show that their conductance becomes increased easily by several orders of magnitudes due to the hole doping, which is a characteristic behavior of a p-type semiconductor. On the other hand, we will also show that the poly (dA) - poly (dT) DNA molecules behave as an n-type semiconductor. Our works indicate that the concentration and the type of carriers in the DNA molecules could be controlled using proper doping methods. We expect that this would be a major breakthrough in DNA-based nano-electronics, similar to the fact that the doped conductive has polyacetylene opened up a new field of electronics with exciting implications

LaCoO3: Promising cathode material for protonic ceramic fuel cells based on a BaCe0.2Zr0.7Y0.1O3−δ electrolyte

DEFF Research Database (Denmark)

Ricote, Sandrine; Bonanos, Nikolaos; Lenrick, Filip

2012-01-01

Symmetric cells (cathode/electrolyte/cathode) were prepared using BaCe0.2Zr0.7Y0.1O3−δ (BCZY27) as proton conducting electrolyte and LaCoO3 (LC) infiltrated into a porous BCZY27 backbone as cathode. Single phased LC was formed after annealing in air at 600 °C for 2 h. Scanning electron micrograph...... that the presence of oxide ion conduction in the cathode material is not necessary for good performance.......Symmetric cells (cathode/electrolyte/cathode) were prepared using BaCe0.2Zr0.7Y0.1O3−δ (BCZY27) as proton conducting electrolyte and LaCoO3 (LC) infiltrated into a porous BCZY27 backbone as cathode. Single phased LC was formed after annealing in air at 600 °C for 2 h. Scanning electron micrographs...... showed the presence of the infiltrated LC in the full cathode depth. Transmission electron micrographs revealed LC grains (60–80 nm) covering partly the BCZY27 grains (200 nm–1 μm). Impedance spectra were recorded at 500 °C and 600 °C, varying the oxygen partial pressure and the water vapour pressure...

Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2

International Nuclear Information System (INIS)

Sun, F.; Zhao, G. Q.; Escanhoela, C. A. Jr.

2017-01-01

We investigate doping- and pressure-induced changes in the electronic state of Mn 3d and As 4p orbitals in II-II-V based diluted magnetic semiconductor (Ba_1_-_x,K_x)(Zn_1_-_y,Mn_y)_2As_2 to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T_c = 230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption and dichroism) show that the emergence, and further enhancement of ferromagnetic interactions with increased hole doping into the As 4p band is accompanied by a decrease in local 3d spin density at Mn sites. This is a result of increasing Mn 3d - As 4p hybridization with hole doping which enhances indirect exchange interactions between Mn dopants and gives rise to induced magnetic polarization in As 4p states. On the contrary, application of pressure suppresses exchange interactions. While Mn Kβ emission spectra show a weak response of 3d state to pressure, clear As 4p band broadening (hole delocalization) is observed under pressure ultimately leading to loss of ferromagnetism concomitant with a semiconductor to metal transition. The pressure response of As 4p and Mn 3d states is intimately connected with the evolution of the As-As interlayer distance and the geometry of the MnAs_4 tetrahedral units, which we probed with X-ray diffraction. Our results indicate that hole doping increases the degree of covalency between the anion (As) p states and cation (Mn) d states in the MnA_s_4 tetrahedron, a crucial ingredient to promote indirect exchange interactions between Mn dopants and high T_c ferromagnetism. As a result, the instability of ferromagnetism and semiconducting state against pressure is mainly dictated by delocalization of anion p states.

Enhanced photocatalytic property of BiFeO_3/N-doped graphene composites and mechanism insight

International Nuclear Information System (INIS)

Li, Pai; Li, Lei; Xu, Maji; Chen, Qiang; He, Yunbin

2017-01-01

Highlights: • A hydrothermal process was used to prepare BiFeO_3/N-doped graphene composites. • BiFeO_3/N-doped graphene exhibits superior photocatalytic activity and stability. • The energy band of BiFeO_3 bends downward by ∼1.0 eV at the composite interface. • Downward band bending leads to rapid electron transfer at the composite interface. • Holes and ·OH are predominant active species in the photo-degradation process. - Abstract: A series of BiFeO_3/(N-doped) graphene composites are prepared by a facile hydrothermal method. BiFeO_3/N-doped graphene shows photocatalytic performance superior to that of BiFeO_3/graphene and pristine BiFeO_3. The enhanced photo-degradation performance of BiFeO_3/N-doped graphene are mainly attributable to the improved light absorbance of the composite, abundant active adsorption sites and high electrical charge mobility of N-doped graphene, and the downward band bending of BiFeO_3 at the composite interface. In particular, X-ray photoelectron spectroscopy analyses reveal that the electron energy band of BiFeO_3 is downward bent by 1.0 eV at the interface of BiFeO_3/N-doped graphene, because of different work functions of both materials. This downward band bending facilitates the transfer of photogenerated electrons from BiFeO_3 to N-doped graphene and prompts the separation of photo-generated electron-hole pairs, leading eventually to the enhanced photocatalytic performance.

Enhancing Photovoltaic Performance of Inverted Planar Perovskite Solar Cells by Cobalt-Doped Nickel Oxide Hole Transport Layer.

Science.gov (United States)

Xie, Yulin; Lu, Kai; Duan, Jiashun; Jiang, Youyu; Hu, Lin; Liu, Tiefeng; Zhou, Yinhua; Hu, Bin

2018-04-25

Electron and hole transport layers have critical impacts on the overall performance of perovskite solar cells (PSCs). Herein, for the first time, a solution-processed cobalt (Co)-doped NiO X film was fabricated as the hole transport layer in inverted planar PSCs, and the solar cells exhibit 18.6% power conversion efficiency. It has been found that an appropriate Co-doping can significantly adjust the work function and enhance electrical conductivity of the NiO X film. Capacitance-voltage ( C- V) spectra and time-resolved photoluminescence spectra indicate clearly that the charge accumulation becomes more pronounced in the Co-doped NiO X -based photovoltaic devices; it, as a consequence, prevents the nonradiative recombination at the interface between the Co-doped NiO X and the photoactive perovskite layers. Moreover, field-dependent photoluminescence measurements indicate that Co-doped NiO X -based devices can also effectively inhibit the radiative recombination process in the perovskite layer and finally facilitate the generation of photocurrent. Our work indicates that Co-doped NiO X film is an excellent candidate for high-performance inverted planar PSCs.

Preparation and Luminescent Properties of the antibacterial materials of the La3+ Doped Sm3+-Hydroxyapatite

Science.gov (United States)

Lv, Yuguang; Shi, Qi; Jin, Yuling; Ren, Hengxin; Qin, Yushan; Wang, Bo; Song, Shanshan

2018-03-01

In this paper, the La3+-doped Sm3+ hydroxyapatite (La/Sm/HAP) complexes were prepared by a precipitation method. The sample was defined by IR spectra, fluorescence spectra and X ray diffraction analysis et al. The structure of complexes were discussed. The emission wavelength of heat treatment of Sm3+ do not change, but will affect the intensity of the peak Sm3+ luminescence properties and the occupy hydroxyapatite in the lattice Ca( II )and Ca( I ) loci with Sm3+ doped concentration and the proportion of the sintering temperature change and change: The nano hydroxyapatite complex of the La3+ doped samarium obtain the good fluorescence intensity, by La3+ doping content of Sm3+ were hydroxyapatite 6% (La3+, Sm3+ mole ratio) device. The complex of La3+ doped samarium HAP have Stable chemical property, fluorescence property and excellent biological activity. The ligand HAP absorbs energy or captures an electron-hole pair and then transfers it to the lanthanide ions. The catalytic activity influence of the La3+-doped Sm3+hydroxyapatite was discussed, the La/Sm/HAP had excellent antibacterial property, which used as potential biological antibacterial material.

Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

International Nuclear Information System (INIS)

Rodriguez-Vargas, I; Madrigal-Melchor, J; Vlaev, S J

2009-01-01

We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp 3 s' tight-binding approximation including spin for the hole level structure analysis. The parameters of the tight-binding hamiltonian were taken from Klimeck et al. [Klimeck G, Bowen R C, Boykin T B, Salazar-Lazaro C, Cwik T A and Stoica A 2000 Superlattice. Microst. 27 77], first neighbors parameters that give realiable results for the valence band of Si. The calculations are based on a scheme previously proposed and applied to delta-doped quantum well systems [Vlaev S J and Gaggero-Sager L M 1998 Phys. Rev. B 58 1142]. The scheme relies on the incorporation of the delta-doped quantum well potential in the diagonal terms of the tight-binding hamiltonian. We give a detail description of the delta-doped quantum well structures, this is, we study the hole subband structure behavior as a function of the impurity density, the interwell distance of the doped planes and the superlattice period. We also compare our results with the available theoretical and experimental data, obtaining a reasonable agreement.

Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

Energy Technology Data Exchange (ETDEWEB)

Rodriguez-Vargas, I; Madrigal-Melchor, J; Vlaev, S J, E-mail: isaac@planck.reduaz.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, ZAC. (Mexico)

2009-05-01

We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp{sup 3}s' tight-binding approximation including spin for the hole level structure analysis. The parameters of the tight-binding hamiltonian were taken from Klimeck et al. [Klimeck G, Bowen R C, Boykin T B, Salazar-Lazaro C, Cwik T A and Stoica A 2000 Superlattice. Microst. 27 77], first neighbors parameters that give realiable results for the valence band of Si. The calculations are based on a scheme previously proposed and applied to delta-doped quantum well systems [Vlaev S J and Gaggero-Sager L M 1998 Phys. Rev. B 58 1142]. The scheme relies on the incorporation of the delta-doped quantum well potential in the diagonal terms of the tight-binding hamiltonian. We give a detail description of the delta-doped quantum well structures, this is, we study the hole subband structure behavior as a function of the impurity density, the interwell distance of the doped planes and the superlattice period. We also compare our results with the available theoretical and experimental data, obtaining a reasonable agreement.

Charge partitioning and anomalous hole doping in Rh-doped ${\mathrm{Sr}}_2{\mathrm{IrO}}_4$

Energy Technology Data Exchange (ETDEWEB)

Chikara, S.; Fabbris, G.; Terzic, J.; Cao, G.; Khomskii, D.; Haskel, D.

2017-02-01

The simultaneous presence of sizable spin-orbit interactions and electron correlations in iridium oxides has led to predictions of novel ground states including Dirac semimetals, Kitaev spin liquids, and superconductivity. Electron and hole doping studies of spin-orbit assisted Mott insulator Sr2IrO4 are being intensively pursued due to extensive parallels with the La2CuO4 parent compound of cuprate superconductors. In particular, the mechanism of charge doping associated with replacement of Ir with Rh ions remains controversial with profound consequences for the interpretation of electronic structure and transport data. Using x-ray absorption near edge structure measurements at the Rh L, K, and Ir L edges we observe anomalous evolution of charge partitioning between Rh and Ir with Rh doping. The partitioning of charge between Rh and Ir sites progresses in a way that holes are initially doped into the J(eff) = 1/2 band at low x only to be removed from it at higher x values. This anomalous hole doping naturally explains the reentrant insulating phase in the phase diagram of Sr2Ir1-x Rh-x O-4 and ought to be considered when searching for superconductivity and other emergent phenomena in iridates doped with 4d elements.

Electronic correlations in hole- and electron-doped Fe-based superconductors

Science.gov (United States)

Hardy, Frederic; Boehmer, Anna; Schweiss, Peter; Wolf, Thomas; Heid, Rolf; Eder, Robert; Fisher, Robert A.; Meingast, Christoph

2015-03-01

High-temperature superconductivity in the cuprates occurs at the crossover from a highly-correlated Mott insulating state to a weaker correlated Fermi liquid as a function of hole doping. The iron pnictides were initially thought to be fairly weakly correlated. However, we have recently shown using transport and thermodynamic measurements that KFe2As2 is strongly correlated. Both the Sommerfeld coefficient and the Pauli susceptibility are strongly enhanced with respect to their bare DFT values. These correlations are even further enhanced in RbFe2As2andCsFe2As2. The temperature dependence of both the susceptibility and the thermal expansion provides strong experimental evidence for the existence of a coherence-incoherence crossover; similar to what is found in heavy-fermion compounds. Whereas the correlations in the cuprates result from a large value of the Hubbard U, recent works have stressed the particular relevance of Hund's coupling in the pnictides. Our data may be interpreted in terms of a close proximity of KFe2As2 to an orbital-selective Mott transition. We now have good thermodynamic data covering both the hole and electron sides of the BaFe2As2 system and we will discuss how these correlations are modified by doping.

Hole-doping of mechanically exfoliated graphene by confined hydration layers

Institute of Scientific and Technical Information of China (English)

Tjeerd R. J. Bollmann[1,2; Liubov Yu. Antipina[3,4; Matthias Temmen[2; Michael Reichling[2; Pavel B. Sorokin[5

2015-01-01

By the use of non-contact atomic force microscopy （NC-AFM） and Kelvin probe force microscopy （KPFM）, we measure the local surface potential of mechanically exfoliated graphene on the prototypical insulating hydrophilic substrate of CAF2（111）. Hydration layers confined between the graphene and the CaF2 substrate, resulting from the graphene＇s preparation under ambient conditions on the hydrophilic substrate surface, are found to electronically modify the graphene as the material＇s electron density transfers from graphene to the hydration layer. Density functional theory （DFT） calculations predict that the first 2 to 3 water layers adjacent to the graphene hole-dope the graphene by several percent of a unit charge per unit cell.

Effects of hole doping on the electronic transport properties of PrBa sub 1 sub . sub 8 Sr sub 0 sub . sub 2 Cu sub 3 O sub y and PrSr sub 2 Cu sub 2 sub . sub 7 Mo sub 0 sub . sub 3 O sub y

CERN Document Server

Yang, C F; Zhang, H

2002-01-01

We investigate the effect of Ca doping on the electronic transport properties and superconductivity of Pr sub 1 sub - sub x Ca sub x Ba sub 1 sub . sub 8 Sr sub 0 sub . sub 2 Cu sub 3 O sub y and Pr sub 1 sub - sub x Ca sub x Sr sub 2 Cu sub 2 sub . sub 7 Mo sub 0 sub . sub 3 O sub y systems. It is found that when PrBa sub 2 Cu sub 3 O sub y (Pr123) is in a highly localized state, the Ca doping mainly decreases the 4f-2p hybridized states and thus releases the holes into the CuO sub 2 planes. Whereas when Pr123 is in a less localized state, the Ca doping not only introduces holes into the CuO sub 2 planes, but also induces dramatic charge transfer. Our results suggest that only when the hole concentration in both the CuO chain and the CuO sub 2 planes reaches a proper value, can the superconductivity be restored in the Pr123 system.

Optical decoherence and persistent spectral hole burning in Tm{sup 3+}:LiNbO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Thiel, C.W., E-mail: thiel@physics.montana.ed [Department of Physics, Montana State University, EPS 264, Bozeman, MT 59717 (United States); Spectrum Lab, Montana State University, Bozeman, MT 59717 (United States); Sun, Y. [Department of Physics, University of South Dakota, Vermillion, SD 57069 (United States); Boettger, T. [Department of Physics, University of San Francisco, San Francisco, CA 94117 (United States); Babbitt, W.R. [Department of Physics, Montana State University, EPS 264, Bozeman, MT 59717 (United States); Spectrum Lab, Montana State University, Bozeman, MT 59717 (United States); Cone, R.L. [Department of Physics, Montana State University, EPS 264, Bozeman, MT 59717 (United States)

2010-09-15

We report studies of decoherence and spectral hole burning for the 794 nm optical transition of thulium-doped lithium niobate. In addition to transient spectral holes due to the {sup 3}H{sub 4} and {sup 3}F{sub 4} excited states of Tm{sup 3+}, persistent spectral holes with lifetimes of up to minutes were observed when a magnetic field of a few hundred Gauss was applied. The observed anti-hole structure identified the hole burning mechanism as population storage in the {sup 169}Tm nuclear hyperfine levels. In addition, the magnetic field was effective in suppressing spectral diffusion, increasing the phase memory lifetime from 11 {mu}s at zero field to 23 {mu}s in a field of 320 Gauss applied along the crystal's c-axis. Coupling between Tm{sup 3+} and the {sup 7}Li and {sup 93}Nb spins in the host lattice was also observed and a quadrupole shift of 22 kHz was measured for {sup 7}Li at 1.7 K. A Stark shift of 18 kHz cm/V was measured for the optical transition with the electric field applied parallel to the c-axis.

A simple model for normal state in- and out-of-plane resistivities of hole doped cuprates

Energy Technology Data Exchange (ETDEWEB)

Naqib, S.H., E-mail: shnaqib.physicsru@gmail.com [Department of Physics, University of Rajshahi, Rajshahi 6205 (Bangladesh); Azam, M. Afsana [Department of Physics, University of Rajshahi, Rajshahi 6205 (Bangladesh); Department of Physics, DUET, Gazipur, Dhaka (Bangladesh); Uddin, M. Borhan [Department of Physics, University of Rajshahi, Rajshahi 6205 (Bangladesh); Department of CSE, International Islamic University Chittagong, Sitakunda, IIUC Rd, Kumira 4314 Bangladesh (Bangladesh); Cole, J.R. [Cambridge Flow Solutions Ltd., Histon, Cambridge CB24 9AD (United Kingdom)

2016-05-15

Highlights: • In- and out-of-plane charge transport have been investigated for hole doped cuprates. • Effect of quantum critical point (QCP) on non-Fermi liquid behavior has been explored. • The impact of pseudogap (PG) on carrier scattering rate has been studied. • In- and out-of plane resistivities have been modeled by considering the QCP and the PG. • The model explains the non-Fermi liquid charge transport in hole doped cuprates. - Abstract: The highly anisotropic and qualitatively different nature of the normal state in- and out-of-plane charge dynamics in high-T{sub c} cuprates cannot be accommodated within the conventional Boltzmann transport theory. The variation of in-plane and out-of-plane resistivities with temperature and hole content are anomalous and cannot be explained by Fermi-liquid theory. In this study, we have proposed a simple phenomenological model for the dc resistivity of cuprates by incorporating two firmly established generic features of all hole doped cuprate superconductors—(i) the pseudogap in the quasiparticle energy spectrum and (ii) the T-linear resistivity at high temperatures. This T-linear behavior over an extended temperature range can be attributed to a quantum criticality, affecting the electronic phase diagram of cuprates. Experimental in-plane and out-of-plane resistivities (ρ{sub p}(T) and ρ{sub c}(T), respectively) of double-layer Y(Ca)123 have been analyzed using the proposed model. This phenomenological model describes the temperature and the hole content dependent resistivity over a wide range of temperature and hole content, p. The characteristic PG energy scale, ε{sub g}(p), extracted from the analysis of the resistivity data, agrees quite well with those found in variety of other experiments. Various other extracted parameters from the analysis of ρ{sub p}(T) and ρ{sub c}(T) data showed systematic trends with changing hole concentration. We have discussed important features found from the analysis in

Magnetic ordering and charge transport in electron-doped La1-yCeyMnO3 (0.1 ≤ y ≤ 0.3) films

International Nuclear Information System (INIS)

Prokhorov, V.G.; Kaminsky, G.G.; Flis, V.S.; Hyun, Y.H.; Park, S.Y.; Lee, Y.P.; Svetchnikov, V.L.

2009-01-01

The microstructure and the magnetic and transport properties of as-deposited La 10-y Ce y MnO 3 (0.1≤ y≤ 0.3) films prepared by pulsed laser deposition are investigated in a wide region of temperature and magnetic field. The microstructure analysis reveals that all films have a high c-oriented texture, an orthorhombic crystal lattice, and a negligible quantity of CeO 2 inclusions. The observed strip-domain phase with a periodic spacing of about 3c, the crystal lattice of which is the same as for the basic film phase, exhibits magnetic behavior typical for the Griffiths phase. Regions of the double-period modulated phase are found at room temperature in the y=0.1 film, which is interpreted as Mn 3+ /Mn 2+ ordering with a partial ferromagnetic → antiferromagnetic transition at T N ≤ 80 K. At the same time, the investigation reveals that the magnetic and transport properties of the electron-doped La 1-y Ce y MnO 3 films, driven by cation doping, are similar to those for the hole-doped La/Ca manganites. Therefore, one can conclude that there is no fundamental difference between the mechanisms of spin ordering and charge transport in the hole-doped and electron-doped manganites

Mg doped InN and confirmation of free holes in InN

International Nuclear Information System (INIS)

Wang, K.; Yamaguchi, T.; Miller, N.; Mayer, M. A.; Haller, E. E.; Iwamoto, R.; Araki, T.; Nanishi, Y.; Yu, K. M.; Walukiewicz, W.; Ager, J. W. III

2011-01-01

We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type 'window' the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted.

Long afterglow property of Er"3"+ doped Ca_2SnO_4 phosphor

International Nuclear Information System (INIS)

Zhang, Dongyun; Shi, Mingming; Sun, Yiwen; Guo, Yunyun; Chang, Chengkang

2016-01-01

A novel green emitting long afterglow phosphor, Er"3"+ -doped Ca_2SnO_4 (Ca_2SnO_4:Er"3"+), was prepared successfully via a traditional high temperature solid–state reaction method. Its properties have been characterized and analyzed by utilizing x-ray diffraction (XRD), photoluminescence spectroscope (PLS), afterglow decay curve (ADC) and thermal luminescence spectroscope (TLS). Three main emission peaks of PLS locate at 524, 550 and 668 nm, corresponding to CIE chromaticity coordinates of x = 0.326, y = 0.6592. An optimal doping concentration of Er"3"+ of 2% was determined. The Ca_2SnO_4:Er"3"+ phosphors showed a typical triple-exponential afterglow decay behavior when the UV source was switched off. Thermal simulated luminescence study indicated that the persistent afterglow of Ca_2SnO_4:2 mol% Er"3"+ phosphors was generated by the suitable electron or hole traps which were resulted from the doping the Ca_2SnO_4 host with rare-earth ions (Er"3"+). - Highlights: • A novel green emitting long afterglow phosphor, Ca_2SnO_4:Er"3"+, was prepared. • An optimal doping concentration of Er"3"+ of 2% was determined. • After the UV source was turned off, the Ca_2SnO_4:Er"3"+ showed a typical triple-exponential afterglow decay behavior. • CIE chromaticity coordinates results confirmed a green light emitting of the Ca_2SnO_4:Er"3"+. • The persistent afterglow of the Ca_2SnO_4:Er"3"+ was attributed to suitable electron or hole traps.

Effect of Sr doping on LaTiO3 thin films

International Nuclear Information System (INIS)

Vilquin, B.; Kanki, T.; Yanagida, T.; Tanaka, H.; Kawai, T.

2005-01-01

We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping

Transport and magnetic properties of Ce-doped LaMnO3 thin films

International Nuclear Information System (INIS)

Yanagida, Takeshi; Kanki, Teruo; Vilquin, Bertrand; Tanaka, Hidekazu; Kawai, Tomoji

2005-01-01

Ce-doped LaMnO 3 epitaxial thin films were fabricated by a pulsed laser deposition method in consideration of thermodynamics. Oxygen- or argon-atmosphere post-annealed films showed a metal-insulator transition and ferromagnetic property, and the transition temperature T c was found to be significantly influenced by the post-annealing conditions at the T c ranging from 200 to 300 K. Moreover, the majority carriers within Ce-doped LaMnO 3 films were identified to be holes from Hall effect measurements

Electron, hole and exciton self-trapping in germanium doped silica glass from DFT calculations with self-interaction correction

International Nuclear Information System (INIS)

Du Jincheng; Rene Corrales, L.; Tsemekhman, Kiril; Bylaska, Eric J.

2007-01-01

Density functional theory (DFT) calculations were employed to understand the refractive index change in germanium doped silica glasses for the trapped states of electronic excitations induced by UV irradiation. Local structure relaxation and excess electron density distribution were calculated upon self-trapping of an excess electron, hole, and exciton in germanium doped silica glass. The results show that both the trapped exciton and excess electron are highly localized on germanium ion and, to some extent, on its oxygen neighbors. Exciton self-trapping is found to lead to the formation of a Ge E' center and a non-bridging hole center. Electron trapping changes the GeO 4 tetrahedron structure into trigonal bi-pyramid with the majority of the excess electron density located along the equatorial line. The self-trapped hole is localized on bridging oxygen ions that are not coordinated to germanium atoms that lead to elongation of the Si-O bonds and change of the Si-O-Si bond angles. We carried out a comparative study of standard DFT versus DFT with a hybrid PBE0 exchange and correlation functional. The results show that the two methods give qualitatively similar relaxed structure and charge distribution for electron and exciton trapping in germanium doped silica glass; however, only the PBE0 functional produces the self-trapped hole

Microwave-Assisted Coprecipitation Synthesis of LaCoO3 Nanoparticles and Their Catalytic Activity for Syngas Production by Partial Oxidation of Methane

Directory of Open Access Journals (Sweden)

Consuelo Alvarez-Galvan

2018-04-01

Full Text Available LaCoO3 perovskite-type oxides were prepared by microwave-assisted coprecipitation route and investigated in the catalytic partial oxidation of methane (CPOM to syngas. This preparation method aims to achieve higher specific surface areas (ssa than soft-chemical methods commonly used in the preparation of engineered materials. In an attempt to accomplish the creation of mesostructured porous LaCoO3, an ionic template such as cetyl trimethyl ammonium bromide has been used as endotemplate in some samples. The influence of pH and the type of precipitating agent has been studied. The materials have been characterized at different levels: morphology has been studied by scanning electron microscopy, textural properties by nitrogen adsorption–desorption at −196°C, structural analysis by X-ray diffraction, surface composition by X-ray photoelectron spectroscopy, thermal stability by thermogravimetric analysis, and carbon formation in spent catalysts by Raman spectroscopy. Structure-activity correlations point out that the precipitating agent has a key role on the morphology and porosity of the resultant oxide, as well as on the average crystalline domain of lanthanum perovskite (catalyst precursor. Thus, the use of ammonium hydroxide as precipitant leads to materials with a higher surface area and a greater ssa of cobalt (per unit mass, improving their catalytic performance for the CPOM reaction. The best catalytic performance was found for the catalyst prepared using ammonium hydroxide as precipitant (pH 9 and without adding CTAB as endotemplate.

Hydrogen incorporation in high hole density GaN:Mg

Science.gov (United States)

Zvanut, M. E.; Uprety, Y.; Dashdorj, J.; Moseley, M.; Doolittle, W. Alan

2011-03-01

We investigate hydrogen passivation in heavily doped p-type GaN using electron paramagnetic resonance (EPR) spectroscopy. Samples include both conventionally grown GaN (1019 cm-3 Mg, 1017 cm-3 holes) and films grown by metal modulation epitaxy (MME), which yielded higher Mg (1- 4 x 1020 cm-3) and hole (1- 40 x 1018 cm-3) densities than found in conventionally grown GaN. The Mg acceptor signal is monitored throughout 30 minute annealing steps in N2 :H2 (92%:7%)) and subsequently pure N2 . N2 :H2 heat treatments of the lower hole density films begin to reduce the Mg EPR intensity at 750 o C, but quench the signal in high hole density films at 600 o C. Revival of the signal by subsequent N2 annealing occurs at 800 o C for the low hole density material and 600 o C in MME GaN. The present work highlights chemical differences between heavily Mg doped and lower doped films; however, it is unclear whether the difference is due to changes in hydrogen-Mg complex formation or hydrogen diffusion. The work at UAB is supported by the NSF.

Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

Energy Technology Data Exchange (ETDEWEB)

Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

2011-07-01

Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-Tc superconductors

International Nuclear Information System (INIS)

Moritz, B; Johnston, S; Greven, M; Shen, Z-X; Devereaux, T P; Schmitt, F; Meevasana, W; Motoyama, E M; Lu, D H; Kim, C; Scalettar, R T

2009-01-01

Recently, angle-resolved photoemission spectroscopy (ARPES) has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). This paper demonstrates, using a combination of new ARPES measurements and quantum Monte Carlo simulations, that the HEA is not simply the by-product of matrix element effects, but rather represents a cross-over from a quasi-particle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character, in both hole- and electron-doped cuprates. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. the 'waterfall'-like behavior, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying both hole and electron doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram.

Role of bromine doping on the photovoltaic properties and microstructures of CH3NH3PbI3 perovskite solar cells

International Nuclear Information System (INIS)

Suzuki, Atsushi; Okada, Hiroshi; Oku, Takeo

2016-01-01

Organic-inorganic hybrid heterojunction solar cells containing CH 3 NH 3 PbI 3 perovskite compound were fabricated using mesoporous TiO 2 as the electronic transporting layer and spirobifluorence as the hole-transporting layer. The purpose of the present study is to investigate role of bromine (Br) doping on the photovoltaic properties and microstructure of CH 3 NH 3 PbI 3 perovskite solar cells. Photovoltaic, optical properties and microstructures of perovskite-based solar cells were investigated. The X-ray diffraction identified crystal structure of the perovskite layer doped with Br in the solar cell. Scanning electron microscopy observation showed a different behavior of surface morphology and the perovskite crystal structure on the TiO 2 mesoporous structure depending on extent amount of hydrogen doping of Br. The role of bromide halogen doping on the perovskite crystal structure and photovoltaic properties was due to improvement of carrier mobility, optimization of electron structure, band gap related with the photovoltaic parameters of V oc , J sc and η. Energy diagram and photovoltaic mechanism of the perovskite solar cells varied with halogen doping was discussed by experimental results

Theoretical study of the density of states and magnetic properties of LaCoO3

Science.gov (United States)

Zhuang, Min; Zhang, Weiyi; Hu, Cheng; Ming, Naiben

1998-05-01

The density of states and magnetic properties of low-spin, high-spin, and mixing states of LaCoO3 have been studied within the unrestricted Hartree-Fock approximation. The real-space recursion method is adopted for computing the electronic structure of the disordered system. The paramagnetic high-spin state is dealt with using the usual binary alloy coherent potential approximation (CPA); an extended trinary alloy CPA approximation is developed to describe the mixing state. In agreement with experiments, our results show that the main features of the quasiparticle spectra in the mixing state are not a sensitive function of the high-spin component, but the spectrum does get broadened due to spin scattering. The increasing of the high-spin component also results in a pileup of the density of states at the Fermi energy which indicates an insulator to metal phase transition. Some limitations of the present approach are also discussed.

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

The effect of C60 doping on the electroluminescent performance of organic light-emitting devices

International Nuclear Information System (INIS)

Xu Denghui; Deng Zhenbo; Xiao Jing; Guo Dong; Hao Jingang; Zhang Yuanyuan; Gao Yinhao; Liang Chunjun

2007-01-01

Organic light-emitting devices (OLEDs) with the PVK hole transport layer were fabricated. The effect of C 60 doping in the hole transport PVK layer on the performance of the devices was investigated by changing the C 60 content from 0 to 3.0 wt%. The OLEDs had a structure of ITO/PEDOT:PSS/PVK:C 60 (0, 0.5, 1.0, 2.0, 3.0 wt%)/AlQ/LiF/Al. The doping led to a higher conductivity in C 60 -doped PVK layer and the hole mobility of PVK was improved from 4.5x10 -7 to 2.6x10 -6 cm 2 /Vs with the doping concentration of C 60 changing from 0 to 3.0 wt%. Moreover, the doping led to a high density of equilibrium charges carriers, which facilitated hole injection and transport. Doping of C 60 in PVK resulted in efficient hole injection and low drive voltage at high luminance

Where do the doped holes go in La2-xSrxCuO4? A close look by XAFS

International Nuclear Information System (INIS)

Haskel, Daniel; Polinger, Victor; Stern, Edward A.

1999-01-01

Polarized x-ray absorption fine structure (XAFS) measurements at the La and Sr sites in La 2-x Sr x CuO 4 (0.075(less-or-similar sign)x(less-or-similar sign)0.35) indicate that doped holes introduced with Sr are not uniformly distributed in the CuO 2 planes but reside in impurity states with the majority of charge located on CuO 6 octahedra coupled to the Sr dopants by an apical oxygen (denoted as Sr octahedra). A model based on doped hole-induced Jahn Teller (JT) distortions of these Sr octahedra indicates the impurity states are overlapping singlet and triplet ones resulting from pairings of intrinsic and extrinsic holes. The more mobile singlet pairs reside in the CuO 2 planes, are bound by more than 0.1 eV and could Bose-condense into a superconducting state. The predominant appearance of (mostly) out-of plane triplet states at high x intimately related to the 2D-3D crossover in transport properties and could relate to the observed loss of high T c in the overdoped regime, as confinement of carriers to the CuO 2 planes is reduced. (c) 1999 American Institute of Physics

Effects of pentacene-doped PEDOT:PSS as a hole-conducting layer on the performance characteristics of polymer photovoltaic cells.

Science.gov (United States)

Kim, Hyunsoo; Lee, Jungrae; Ok, Sunseong; Choe, Youngson

2012-01-05

We have investigated the effect of pentacene-doped poly(3,4-ethylenedioxythiophene:poly(4-styrenesulfonate) [PEDOT:PSS] films as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the amount of pentacene and the annealing temperature of pentacene-doped PEDOT:PSS layer, the changes of performance characteristics were evaluated. Pentacene-doped PEDOT:PSS thin films were prepared by dissolving pentacene in 1-methyl-2-pyrrolidinone solvent and mixing with PEDOT:PSS. As the amount of pentacene in the PEDOT:PSS solution was increased, UV-visible transmittance also increased dramatically. By increasing the amount of pentacene in PEDOT:PSS films, dramatic decreases in both the work function and surface resistance were observed. However, the work function and surface resistance began to sharply increase above the doping amount of pentacene at 7.7 and 9.9 mg, respectively. As the annealing temperature was increased, the surface roughness of pentacene-doped PEDOT:PSS films also increased, leading to the formation of PEDOT:PSS aggregates. The films of pentacene-doped PEDOT:PSS were characterized by AFM, SEM, UV-visible transmittance, surface analyzer, surface resistance, and photovoltaic response analysis.

High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

2018-05-08

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Preparation and characterization of La1-xCexCoO3 perovskite oxides for energy materials

International Nuclear Information System (INIS)

Nyamdavaa, E.; Sevjidsuren, G.; Altantsog, P.; Yuanga, E.

2016-01-01

Cerium-doped lanthanum cobaltite perovskites (La 1-x Ce x CoO 3 with x = 0,0.2, 0.4) were prepared by the sol-gel method (calcined for 5 h at 750°C) and characterized by X-ray diffraction (XRD), X-ray absorption (XAS), energy-dispersive X-ray spectroscopy (EDS), and BET surface area analysis. The results showed that the cerium doping promoted the structural transformation of LaCoO 3 from rhombohedral into the cubic structure. High specific surface area and small crystallite size are achieved at x = 0.2. The XAS results confirmed the formation of compound La 1-x Ce x CoO 3 . [ru

Doping and defects in YBa2Cu3O7: Results from hybrid density functional theory

KAUST Repository

Schwingenschlögl, Udo

2012-06-21

Modified orbital occupation and inhomogeneous charge distribution in high-Tc oxide compounds due to doping and/or defects play a huge role for the material properties. To establish insight into the charge redistribution, we address metallic YBa2Cu3O7 in two prototypical configurations: Ca doped (hole doping) and O deficient (electron doping). By means of first principles calculations for fully relaxed structures, we evaluate the orbital occupations. We find that the change of the charge density, in particular in the CuO2 planes, shows a complex spatial pattern instead of the expected uniform (de-)population of the valence states.

Sol-gel-processed yttrium-doped NiO as hole transport layer in inverted perovskite solar cells for enhanced performance

Science.gov (United States)

Hu, Zijun; Chen, Da; Yang, Pan; Yang, Lijun; Qin, Laishun; Huang, Yuexiang; Zhao, Xiaochong

2018-05-01

In this work, high-performance inverted planar perovskite solar cells (PSCs) using sol-gel processed Y-doped NiO thin films as hole transport layer (HTL) were demonstrated. Y-doped NiO thin films containing different Y doping concentrations were successfully prepared through a simple sol-gel process. The Y doping could significantly improve the electrical conductivity of NiO thin film, and the photovoltaic performance of Y-doped NiO HTL-based PSC devices outperformed that of the pristine NiO HTL-based device. Notably, the PSC using a 5%Y-NiO HTL exhibited the champion performance with an open-circuit voltage (Voc) of 1.00 V, a short circuit current density (Jsc) of 23.82 mA cm-2, a fill factor (FF) of 68% and a power conversion efficiency (PCE) of 16.31%, resulting in a 27.62% enhancement in PCE in comparison with the NiO device. The enhanced performance of the Y-doped NiO device could be attributed to the improved hole mobility, the high quality compact active layer morphology, the more efficient charge extraction from perovskite absorber as well as the lower recombination probability of charge carriers. Thus, this work provides a simple and effective approach to improve the electrical conductivity of p-type NiO thin films for use as a promising HTL in high performance PSCs.

Peculiar ferromagnetic insulator state in the low-hole-doped manganites

International Nuclear Information System (INIS)

Algarabel, P.A.; Teresa, J.M. de; Blasco, J.; Ibarra, M.R.; Kapusta, Cz.; Sikora, M.; Zajac, D.; Riedi, P.C.; Ritter, C.

2003-01-01

In this work we show the very different nature of the ferromagnetic state of the low-hole-doped manganites with respect to other manganites showing colossal magnetoresistance. High-field measurements definitively prove the coexistence of ferromagnetic-metallic and ferromagnetic-insulating regions even when the sample is magnetically saturated, with the ground state being inhomogeneous. We have investigated La 0.9 Ca 0.1 MnO 3 as a prototype compound. A wide characterization by means of magnetic and magnetotransport measurements, neutron diffraction, small-angle neutron scattering, and nuclear magnetic resonance has allowed us to establish that the ground state is based on the existence of disordered nanometric double-exchange metallic clusters that coexist with long-range superexchange-based ferromagnetic insulating regions. Under high magnetic field the system reaches magnetization saturation by aligning the magnetic clusters and the insulating matrix, but even if they grow in size, they do not reach the percolation limit

Magic Doping Fractions in High-Temperature Superconductors

Energy Technology Data Exchange (ETDEWEB)

Komiya, Seiki; /CRIEPI, Tokyo; Chen, Han-Dong; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.; Ando, Yoichi; /CRIEPI, Tokyo

2010-01-15

We report hole-doping dependence of the in-plane resistivity {rho}{sub ab} in a cuprate superconductor La{sub 2-x}Sr{sub x}CuO{sub 4}, carefully examined using a series of high-quality single crystals. Our detailed measurements find a tendency towards charge ordering at particular rational hole doping fractions of 1/16, 3/32, 1/8, and 3/16. This observation appears to suggest a specific form of charge order and is most consistent with the recent theoretical prediction of the checkerboard-type ordering of the Cooper pairs at rational doping fractions x = (2m + 1)/2{sup n}, with integers m and n.

Role of bromine doping on the photovoltaic properties and microstructures of CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Atsushi; Okada, Hiroshi; Oku, Takeo [Department of Materials Science, The University of Shiga Prefecture 2500 Hassaka, Hikone, Shiga, 522-8533 (Japan)

2016-02-01

Organic-inorganic hybrid heterojunction solar cells containing CH{sub 3}NH{sub 3}PbI{sub 3} perovskite compound were fabricated using mesoporous TiO{sub 2} as the electronic transporting layer and spirobifluorence as the hole-transporting layer. The purpose of the present study is to investigate role of bromine (Br) doping on the photovoltaic properties and microstructure of CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cells. Photovoltaic, optical properties and microstructures of perovskite-based solar cells were investigated. The X-ray diffraction identified crystal structure of the perovskite layer doped with Br in the solar cell. Scanning electron microscopy observation showed a different behavior of surface morphology and the perovskite crystal structure on the TiO{sub 2} mesoporous structure depending on extent amount of hydrogen doping of Br. The role of bromide halogen doping on the perovskite crystal structure and photovoltaic properties was due to improvement of carrier mobility, optimization of electron structure, band gap related with the photovoltaic parameters of V{sub oc}, J{sub sc} and η. Energy diagram and photovoltaic mechanism of the perovskite solar cells varied with halogen doping was discussed by experimental results.

Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration

KAUST Repository

Chen, Chang-Hsiao

2014-10-28

Tungsten diselenide (WSe2) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p-n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe2 monolayer, where a more p-typed WSe2 field effect transistor is realized by electron transfer from the WSe2 to the gold (Au) decorated on the WSe2 surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe2 monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ~100 (cm2/Vs) and the near ideal subthreshold swing of ~60 mV/decade and high on/off current ratio of >106 are observed. The Au deposited on the WSe2 also serves as a protection layer to prevent a reaction between the WSe2 and the environment, making the doping stable and promising for future scalable fabrication.

Improving the efficiency and environmental stability of inverted planar perovskite solar cells via silver-doped nickel oxide hole-transporting layer

Science.gov (United States)

Wei, Ying; Yao, Kai; Wang, Xiaofeng; Jiang, Yihua; Liu, Xueyuan; Zhou, Naigen; Li, Fan

2018-01-01

In this paper, we demonstrate the high-performance inverted planar heterojunction perovskite solar cells (PeSCs) based on the novel inorganic hole-transporting layer (HTL) of silver (Ag)-doped NiOx (Ag:NiOx). Density-functional theory (DFT) calculation reveals that Ag prefers to occupy the substitutional Ni site (AgNi) and behaves as an acceptor in NiO lattice. Compared with the pristine NiOx films, appropriate Ag doping can increase the optical transparency, work function, electrical conductivity and hole mobility of NiOx films. Moreover, the CH3NH3PbI3 perovskite films grown on Ag:NiOx exhibit better crystallinity, higher coverage and smoother surface with densely packed larger grains than those grown on the pristine NiOx film. Consequently, the Ag:NiOx HTL boosts the efficiency of the inverted planar heterojunction PeSCs from 13.46% (for the pristine NiOx-based device) to 16.86% (for the 2 at.% Ag:NiOx-based device). Furthermore, the environmental stability of PeSCs based on Ag:NiOx HTL is dramatically improved compared to devices based on organic HTLs and pristine NiOx HTLs. This work provides a simple and effective HTL material system for high-efficient and stable PeSCs.

Hole centers in γ-irradiated, oxidized Al2O3

International Nuclear Information System (INIS)

Lee, K.H.; Holmberg, G.E.; Crawford, J.H. Jr.

1976-01-01

ESR observations of centers with S = 1/2, g approximately equal to 2, S = 1, g approximately equal to 2 have been made at 77 K on oxidized Al 2 O 3 after γ-irradiation at 30 0 C. From the radiation growth data, it is shown that the S = 1/2 centers are precursors of the S = 1 centers. In addition, when the S = 1 centers anneal out at about 110 0 C, the S = 1/2 centers reappear and eventually anneal out at about 260 0 C. Previously Gamble (Gamble, F.T.; Ph.D. Thesis, U. of Connecticut (1963)) and Cox (Cox, R.T.; Ph.D. Thesis, U. of Grenoble (1972) unpublished), respectively, observed S = 1/2 and S = 1 paramagnetic centers in electron-irradiated nominally pure Al 2 O 3 and γ-irradiated, oxidized, titanium-doped Al 2 O 3 . The models proposed for these centers were one hole and two holes trapped on oxygen ions adjacent to Al 3+ vacancies. Our results further substantiate these models. (author)

Hole doped Dirac states in silicene by biaxial tensile strain

KAUST Repository

Kaloni, Thaneshwor P.

2013-03-11

The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole doped Dirac states because of weakened Si–Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It is noted that the buckling first decreases with the strain (up to 10%) and then increases again, which is accompanied by a band gap variation. We also calculate the Grüneisen parameter and demonstrate a strain dependence similar to that of graphene.

Hole doped Dirac states in silicene by biaxial tensile strain

KAUST Repository

Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo

2013-01-01

The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole doped Dirac states because of weakened Si–Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It is noted that the buckling first decreases with the strain (up to 10%) and then increases again, which is accompanied by a band gap variation. We also calculate the Grüneisen parameter and demonstrate a strain dependence similar to that of graphene.

Studies on entanglement entropy for Hubbard model with hole-doping and external magnetic field

International Nuclear Information System (INIS)

Yao, K.L.; Li, Y.C.; Sun, X.Z.; Liu, Q.M.; Qin, Y.; Fu, H.H.; Gao, G.Y.

2005-01-01

By using the density matrix renormalization group (DMRG) method for the one-dimensional (1D) Hubbard model, we have studied the von Neumann entropy of a quantum system, which describes the entanglement of the system block and the rest of the chain. It is found that there is a close relation between the entanglement entropy and properties of the system. The hole-doping can alter the charge-charge and spin-spin interactions, resulting in charge polarization along the chain. By comparing the results before and after the doping, we find that doping favors increase of the von Neumann entropy and thus also favors the exchange of information along the chain. Furthermore, we calculated the spin and entropy distribution in external magnetic filed. It is confirmed that both the charge-charge and the spin-spin interactions affect the exchange of information along the chain, making the entanglement entropy redistribute

Radiation hardening in sol-gel derived Er3+-doped silica glasses

International Nuclear Information System (INIS)

Hari Babu, B.; León Pichel, Mónica; Ollier, Nadège; El Hamzaoui, Hicham; Bigot, Laurent; Savelii, Inna; Bouazaoui, Mohamed; Poumellec, Bertrand; Lancry, Matthieu; Ibarra, Angel

2015-01-01

The aim of the present paper is to report the effect of radiation on the Er 3+ -doped sol-gel silica glasses. A possible application of these sol-gel glasses could be their use in harsh radiation environments. The sol-gel glasses are fabricated by densification of erbium salt-soaked nanoporous silica xerogels through polymeric sol-gel technique. The radiation-induced attenuation of Er 3+ -doped sol-gel silica is found to increase with erbium content. Electron paramagnetic resonance studies reveal the presence of E′ δ point defects. This happens in the sol-gel aluminum-silica glass after an exposure to γ-rays (kGy) and in sol-gel silica glass after an exposure to electrons (MGy). The concentration levels of these point defects are much lower in γ-ray irradiated sol-gel silica glasses. When the samples are co-doped with Al, the exposure to γ-ray radiation causes a possible reduction of the erbium valence from Er 3+ to Er 2+ ions. This process occurs in association with the formation of aluminum oxygen hole centers and different intrinsic point defects

Positron Annihilation Lifetime Study of Pure and Doped Polyvinyl Chloride with Al2O3

International Nuclear Information System (INIS)

Abdel-Hady, E.E.; Hamdy, F. M. M.; Alaa, H.B.

2005-01-01

Positron annihilation lifetime of pure and doped polyvinyl chloride (PVC) with Al 2 O 3 reflect the effect of concentration as well as temperature on free volume. Therefore, variations of the ortho-positronium (o-Ps) lifetime and its intensity have been correlated with changes in the dielectric properties of the pure and doped PVC. The o-Ps lifetime and its intensity show a linear dependence with a discontinuity at 20 % concentration of Al 2 O 3 . The size and the fractional of the o-Ps hole volume were estimated from the positron annihilation parameters. Therefore, the temperature dependence of the electrical conductivity and the positron annihilation parameters on pure and doped PVC with 20 % Al 2 O 3 were studied in the range from 20 to 140 degree C. The shift of the glass transition temperature to lower temperature for the 20 % Al 2 O 3 doped PVC might explain the increase in the electrical conductivity with the concentration of the additive

Facile synthesis of Sm-doped BiFeO{sub 3} nanoparticles for enhanced visible light photocatalytic performance

Energy Technology Data Exchange (ETDEWEB)

Hu, Zijun; Chen, Da, E-mail: dchen_80@hotmail.com; Wang, Sen; Zhang, Ning; Qin, Laishun, E-mail: qinlaishun@cjlu.edu.cn; Huang, Yuexiang

2017-06-15

Highlights: • Effective Sm doping into BiFeO{sub 3} nanoparticles was obtained by a facile sol-gel route. • Band gap of Sm-doped BiFeO{sub 3} nanoparticles was regulated by the dopant concentration. • Sm-doped BiFeO{sub 3} nanoparticles exhibited superior photocatalytic activities. • The possible photocatalytic mechanism of Sm-doped BiFeO{sub 3} nanospheres was discussed. - Abstract: In this work, the effect of Sm doping on the structural and photocatalytic properties of BiFeO{sub 3} (BFO) was investigated. A series of Sm doped BFO nanoparticles containing different Sm dopant contents (Bi{sub (1−x)}Sm{sub x}FeO{sub 3}, x = 0.00, 0.01, 0.03, 0.05, 0.07, 0.10) were synthesized via a simple sol-gel route. It was revealed that Sm{sup 3+} ions were successfully doped into BFO nanoparticles, and the band gap value was gradually decreased when increasing Sm dopant concentration. The photocatalytic activity of Sm-doped BFO photocatalyst was significantly affected by the Sm doping content. Compared to pure BFO, the Sm-doped BFO samples exhibited much higher photocatalytic activity. The improved photocatalytic activity of Sm-doped BFO could be attributed to the enhanced visible light absorption and the efficient separation of photogenerated electrons and holes derived from Sm dopant trapping level in the Sm-doped BFO samples. In addition, the possible photocatalytic mechanism of Sm-doped BFO photocatalyst was also proposed.

Doping and defects in YBa2Cu3O7: Results from hybrid density functional theory

KAUST Repository

Schwingenschlö gl, Udo; Schuster, Cosima

2012-01-01

7 in two prototypical configurations: Ca doped (hole doping) and O deficient (electron doping). By means of first principles calculations for fully relaxed structures, we evaluate the orbital occupations. We find that the change of the charge density

Hole localization, migration, and the formation of peroxide anion in perovskite SrTiO3

Science.gov (United States)

Chen, Hungru; Umezawa, Naoto

2014-07-01

Hybrid density functional calculations are carried out to investigate the behavior of holes in SrTiO3. As in many other oxides, it is shown that a hole tend to localize on one oxygen forming an O- anion with a concomitant lattice distortion; therefore a hole polaron. The calculated emission energy from the recombination of the localized hole and a conduction-band electron is about 2.5 eV, in good agreement with experiments. Therefore the localization of the hole or self-trapping is likely to be responsible for the green photoluminescence at low temperature, which was previously attributed to an unknown defect state. Compared to an electron, the calculated hole polaron mobility is three orders of magnitude lower at room temperature. In addition, two O- anions can bind strongly to form an O22- peroxide anion. No electronic states associated with the O22- peroxide anion are located inside the band gap or close to the band edges, indicating that it is electronically inactive. We suggest that in addition to the oxygen vacancy, the formation of the O22- peroxide anion can be an alternative to compensate acceptor doping in SrTiO3.

Effects of disorder on the intrinsically hole-doped iron-based superconductor KC a2F e4A s4F2 by cobalt substitution

Science.gov (United States)

Ishida, Junichi; Iimura, Soshi; Hosono, Hideo

2017-11-01

In this paper, the effects of cobalt substitution on the transport and electronic properties of the recently discovered iron-based superconductor KC a2F e4A s4F2 , with Tc=33 K , are reported. This material is an unusual superconductor showing intrinsic hole conduction (0.25 holes /F e2 + ). Upon doping of Co, the Tc of KC a2(Fe1-xC ox) 4A s4F2 gradually decreased, and bulk superconductivity disappeared when x ≥0.25 . Conversion of the primary carrier from p type to n type upon Co-doping was clearly confirmed by Hall measurements, and our results are consistent with the change in the calculated Fermi surface. Nevertheless, neither spin density wave (SDW) nor an orthorhombic phase, which are commonly observed for nondoped iron-based superconductors, was observed in the nondoped or electron-doped samples. The electron count in the 3 d orbitals and structural parameters were compared with those of other iron-based superconductors to show that the physical properties can be primarily ascribed to the effects of disorder.

Irradiation-induced doping of Bismuth Telluride Bi2Te3

International Nuclear Information System (INIS)

Rischau, Carl Willem

2014-01-01

Bismuth Telluride Bi 2 Te 3 has attracted enormous attention because of its thermoelectric and topological insulator properties. Regarding its bulk band structure Bi 2 Te 3 is a band insulator with an energy gap of around 150-170 meV. However, the native anti-site defects that are present in real samples always dope this band insulator and shift the chemical potential into the valence or conduction band. In this PhD, the Fermi surface of as-grown and electron irradiated p-type Bi 2 Te 3 single crystals has been investigated extensively using electrical transport experiments. For moderate hole concentrations (p ∼< 5 x 10 18 cm -3 ), it is confirmed that electrical transport can be explained by a six-valley model and the presence of strong Zeeman-splitting. At high doping levels (p≅5 x 10 18 cm -3 ), the hole concentrations determined from Hall and Shubnikov-de Haas (SdH) effect differ significantly which is attributed to an impurity/defect band introduced by the anti-site defects. In this work, we show that it is possible to dope p-type Bi 2 Te 3 in a very controlled manner using electron-irradiation by performing detailed in- and ex-situ electrical transport studies on samples irradiated at room and at low temperatures with 2.5 MeV electrons. These studies show that the defects induced at both irradiation temperatures act as electron donors and can thus be used to convert the conduction from p- to n-type. The point of optimal compensation is accompanied by an increase of the low-temperature resistivity by several orders of magnitude. Irradiation at room temperature showed that both the p-type samples obtained after irradiation to intermediate doses as well as the samples in which the conduction has been converted to n-type by irradiation, still have a well defined Fermi surface as evidenced by SdH oscillations. By studying the Hall coefficient in-situ during low temperature electron irradiation, the coexistence of electron- and hole-type carriers was evidenced

Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-T{sub c} superconductors

Energy Technology Data Exchange (ETDEWEB)

Moritz, B; Johnston, S; Greven, M; Shen, Z-X; Devereaux, T P [Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory and Stanford University, Stanford, CA 94305 (United States); Schmitt, F; Meevasana, W; Motoyama, E M [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305 (United States); Lu, D H [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Kim, C [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Scalettar, R T [Physics Department, University of California-Davis, Davis, CA 95616 (United States)], E-mail: moritzb@slac.stanford.edu

2009-09-15

Recently, angle-resolved photoemission spectroscopy (ARPES) has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). This paper demonstrates, using a combination of new ARPES measurements and quantum Monte Carlo simulations, that the HEA is not simply the by-product of matrix element effects, but rather represents a cross-over from a quasi-particle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character, in both hole- and electron-doped cuprates. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. the 'waterfall'-like behavior, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying both hole and electron doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram.

Electrical properties of Hg3In2Te6 crystals doped with gadolinium

International Nuclear Information System (INIS)

Gorlej, P.M.; Grushka, O.G.; Frasunyak, V.M.

2002-01-01

The temperature dependences of electrical conductivity, the Hall coefficient, thermoelectric power, and the transversal Nernst-Ettingshausen effect of Hg 3 In 2 Te 6 crystals doped with gadolinium are investigated. It is shown that, under strong doping, the Fermi level descends and remains in the upper half of the energy gap in the impurity miscibility range, while the transparency of crystals is decreasing essentially. It causes the impurity self-compensation and preservation of bipolar conductivity typical of intrinsic semiconductors. In this case, the band gap, mobility ratio b=μ n /μp, and effective mass ratio m p /m n (n -electrons, p-holes) are reduced. Experimental results are explained by using the model of disordered semiconductor, in which the borders between forbidden and allowed energy bands are blurred and the transfer of electrons and holes occurs on the corresponding percolation levels because of the presence of the large density of localized states

Hole mobility enhancement and p -doping in monolayer WSe2 by gold decoration

International Nuclear Information System (INIS)

Chen, Chang-Hsiao; Wu, Chun-Lan; Kumar, Pushpendra; Pu, Jiang; Takenobu, Taishi; Chiu, Ming-Hui; Li, Lain-Jong

2014-01-01

Tungsten diselenide (WSe 2 ) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p–n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe 2 monolayer, where a more p-typed WSe 2 field effect transistor is realized by electron transfer from the WSe 2 to the gold (Au) decorated on the WSe 2 surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe 2 monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ∼100 (cm 2 /Vs) and the near ideal subthreshold swing of ∼60 mV/decade and high on/off current ratio of >10 6 are observed. The Au deposited on the WSe 2 also serves as a protection layer to prevent a reaction between the WSe 2 and the environment, making the doping stable and promising for future scalable fabrication. (paper)

Hole history, rotary hole DC-3

International Nuclear Information System (INIS)

1977-10-01

Purpose of hole DC-3 was to drill into the Umtanum basalt flow using both conventional rotary and core drilling methods. The borehole is to be utilized for geophysical logging, future hydrological testing, and the future installation of a borehole laboratory for long-term pressure, seismic, and moisture migration or accumulation recording in the Umtanum basalt flow in support of the Basalt Waste Isolation Program. Hole DC-3 is located east of the 200 West barricaded area on the Hanford reservation

Investigation Performance and Mechanisms of Inverted Polymer Solar Cells by Pentacene Doped P3HT : PCBM

Directory of Open Access Journals (Sweden)

Hsin-Ying Lee

2014-01-01

Full Text Available The inverted polymer solar cells (PSCs with pentacene-doped P3HT : PCBM absorption layers were fabricated. It was demonstrated that the pentacene doping modulated the electron mobility and the hole mobility in the resulting absorption layer. Furthermore, by varying the doping content, the optimal carrier mobility balance could be obtained. In addition, the pentacene doping led to an improvement in the crystallinity of the resulting films and made an enhancement in the light absorption, which was partly responsible for the performance improvement of the solar cells. Using the space-charge-limited current (SCLC method, it was determined that the balanced carrier mobility (μh/μe=1.000 was nearly achieved when a pentacene doping ratio of 0.065 by weight was doped into the P3HT : PCBM : pentacene absorption layer. Compared with the inverted PSCs without the pentacene doping, the short circuit current density and the power conversion efficiency of the inverted PSCs with the pentacene doping ratio of 0.065 were increased from 9.73 mA/cm2 to 11.26 mA/cm2 and from 3.39% to 4.31%, respectively.

Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

Directory of Open Access Journals (Sweden)

Amann Andreas

2011-01-01

Full Text Available Abstract Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range.

High surface hole concentration p-type GaN using Mg implantation

International Nuclear Information System (INIS)

Long Tao; Yang Zhijian; Zhang Guoyi

2001-01-01

Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 17 cm -3 ) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

Electrochemical properties of LaMO3 (M=Co or Fe) as the negative electrode in a hydrogen battery

Science.gov (United States)

Lim, D.-K.; Im, H.-N.; Kim, J.; Song, S.-J.

2013-01-01

Undoped orthorthombic LaFeO3 and monoclinic LaCoO3 oxides were selected as an anode material for Ni-H battery due to their high electron conductivity by multivalent transition status of B-site cation. Both groups of oxides were prepared by a conventional solid-state reaction method, and their electrochemical charge/discharge properties were investigated. The electrochemical kinetic properties, exchange current density, and proton diffusivity were also extracted using linear polarization measurement and the potential-step method. X-ray photoelectron spectroscopy (XPS) analysis was used to measure the oxidation state of the transition metal in the specimens. A non-linear least-square fitting deconvoluted the peaks, suggesting that the valence state of Fe and Co in the sample was mainly +3. The hydrogen diffusion rate was also estimated using the potential-step method, giving 5.42×10-16 and 5.72×10-16 cm2 s-1 for LaCoO3 and LaFeO3, respectively which are an order of magnitude larger than that of Sr doped LaFeO3 oxide electrodes.

A METHOD AND AN ELECTRODE PRODUCED BY INFILTRATION

DEFF Research Database (Denmark)

2014-01-01

The present invention relates to electrodes having Gd and Pr -doped cerium oxide (CGPO)backbones infiltrated with Sr -doped LaCoO3 (LSC) and a method to manufacture them. Pr ions have been introduced into a prefabricated CGO backbone by infiltrating Pr nitrate solution followed by high temperatur...

Long afterglow property of Er{sup 3+} doped Ca{sub 2}SnO{sub 4} phosphor

Energy Technology Data Exchange (ETDEWEB)

Zhang, Dongyun, E-mail: dyz@sit.edu.cn; Shi, Mingming; Sun, Yiwen; Guo, Yunyun; Chang, Chengkang

2016-05-15

A novel green emitting long afterglow phosphor, Er{sup 3+} -doped Ca{sub 2}SnO{sub 4} (Ca{sub 2}SnO{sub 4}:Er{sup 3+}), was prepared successfully via a traditional high temperature solid–state reaction method. Its properties have been characterized and analyzed by utilizing x-ray diffraction (XRD), photoluminescence spectroscope (PLS), afterglow decay curve (ADC) and thermal luminescence spectroscope (TLS). Three main emission peaks of PLS locate at 524, 550 and 668 nm, corresponding to CIE chromaticity coordinates of x = 0.326, y = 0.6592. An optimal doping concentration of Er{sup 3+} of 2% was determined. The Ca{sub 2}SnO{sub 4}:Er{sup 3+} phosphors showed a typical triple-exponential afterglow decay behavior when the UV source was switched off. Thermal simulated luminescence study indicated that the persistent afterglow of Ca{sub 2}SnO{sub 4}:2 mol% Er{sup 3+} phosphors was generated by the suitable electron or hole traps which were resulted from the doping the Ca{sub 2}SnO{sub 4} host with rare-earth ions (Er{sup 3+}). - Highlights: • A novel green emitting long afterglow phosphor, Ca{sub 2}SnO{sub 4}:Er{sup 3+}, was prepared. • An optimal doping concentration of Er{sup 3+} of 2% was determined. • After the UV source was turned off, the Ca{sub 2}SnO{sub 4}:Er{sup 3+} showed a typical triple-exponential afterglow decay behavior. • CIE chromaticity coordinates results confirmed a green light emitting of the Ca{sub 2}SnO{sub 4}:Er{sup 3+}. • The persistent afterglow of the Ca{sub 2}SnO{sub 4}:Er{sup 3+} was attributed to suitable electron or hole traps.

High surface hole concentration p-type GaN using Mg implantation

CERN Document Server

Long Tao; Zhang Guo Yi

2001-01-01

Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The p-type GaN was achieved with high hole concentration (8.28 x 10 sup 1 sup 7 cm sup - sup 3) conformed by Van derpauw Hall measurement after annealing at 800 degree C for 1 h. this is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration

CO Sensing Properties of Nanostructured La0.8Sr0.2CoO3 Sensors Synthesized by EDTA-Glycol Method

Directory of Open Access Journals (Sweden)

G. N. Chaudhari

2008-11-01

Full Text Available We report a simple method for the preparation of pure LaCoO3 and La1-xSrxCoO3 (x = 0.1, 0.2 and 0.25 nanostructures by the EDTA-Glycol method. The final powders obtained by this method have been investigated by X-ray diffraction (XRD and scanning electron microscopy (SEM measurements. The gas sensitivity of pure and Sr doped LaCoO3 samples were investigated for CO, NH3, H2 and LPG. La0.8Sr0.2CoO3 powders (sample GIII calcined at 6500C, exhibited a good sensor response towards CO gas at 2500C. On impregnation of 1 wt.% Pd over sample GIII, the operation temperature reduced to 2000C with a significant rise in sensitivity. The response time also decreases from about 3.5 min for sample GIII to less than 2.5 min for the Pd loaded element. The electronic interaction between Pd and metal oxide semiconductor is proposed to account for the sensitization effect.

Influence of screening effect on hydrogen passivation of hole silicon

International Nuclear Information System (INIS)

Aleksandrov, O.V.

2002-01-01

The simulation of hole silicon passivation during hydrogen diffusion with account of hydrogen-acceptor pairs formation, internal electrical field and screening effect has been carried out. Screening by free carriers of hydrogen and acceptor ions results in shortening their interaction radii and slacking the concentration dependence of hydrogen diffusivity at high level of silicon doping. The consistency of simulated and experimental profiles of holes and hydrogen-acceptor pairs is reached in a broad band of doping levels from 4 x 10 14 to 1.2 x 10 20 cm -3 at the pair binding energy of 0.70-0.79 eV while the radius of the Coulomb interaction of hydrogen and boron ions is equal to 35 A under low doping and decrease with increasing doping level [ru

Studies on entanglement entropy for Hubbard model with hole-doping and external magnetic field [rapid communication

Science.gov (United States)

Yao, K. L.; Li, Y. C.; Sun, X. Z.; Liu, Q. M.; Qin, Y.; Fu, H. H.; Gao, G. Y.

2005-10-01

By using the density matrix renormalization group (DMRG) method for the one-dimensional (1D) Hubbard model, we have studied the von Neumann entropy of a quantum system, which describes the entanglement of the system block and the rest of the chain. It is found that there is a close relation between the entanglement entropy and properties of the system. The hole-doping can alter the charge charge and spin spin interactions, resulting in charge polarization along the chain. By comparing the results before and after the doping, we find that doping favors increase of the von Neumann entropy and thus also favors the exchange of information along the chain. Furthermore, we calculated the spin and entropy distribution in external magnetic filed. It is confirmed that both the charge charge and the spin spin interactions affect the exchange of information along the chain, making the entanglement entropy redistribute.

Tuning the hybridization and magnetic ground state of electron and hole doped CeOs2Al10 : An x-ray spectroscopy study

Science.gov (United States)

Chen, Kai; Sundermann, Martin; Strigari, Fabio; Kawabata, Jo; Takabatake, Toshiro; Tanaka, Arata; Bencok, Peter; Choueikani, Fadi; Severing, Andrea

2018-04-01

Here we present linear and circular polarized soft x-ray absorption spectroscopy (XAS) data at the Ce M4 ,5 edges of the electron (Ir) and hole-doped (Re) Kondo semiconductor CeOs2Al10 . Both substitutions have a strong impact on the unusual high Néel temperature TN=28.5 K, and also the direction of the ordered moment in case of Ir. The substitution dependence of the linear dichroism is weak thus validating the crystal-field description of CeOs2Al10 being representative for the Re and Ir substituted compounds. The impact of electron and hole doping on the hybridization between conduction and 4 f electrons is related to the amount of f0 in the ground state and reduction of x-ray magnetic circular dichroism. A relationship of c f -hybridization strength and enhanced TN is discussed. The direction and doping dependence of the circular dichroism strongly supports the idea of strong Kondo screening along the crystallographic a direction.

Materials and mechanisms of hole superconductivity

Energy Technology Data Exchange (ETDEWEB)

Hirsch, J.E., E-mail: jhirsch@ucsd.edu [Department of Physics, University of California, San Diego, La Jolla, CA 92093-0319 (United States)

2012-01-15

We study the applicability of the model of hole superconductivity to materials. Both conventional and unconventional materials are considered. Many different classes of materials are discussed. The theory is found suitable to describe all of them. No other theory of superconductivity can describe all these classes of materials. The theory of hole superconductivity proposes that there is a single mechanism of superconductivity that applies to all superconducting materials. This paper discusses several material families where superconductivity occurs and how they can be understood within this theory. Materials discussed include the elements, transition metal alloys, high T{sub c} cuprates both hole-doped and electron-doped, MgB{sub 2}, iron pnictides and iron chalcogenides, doped semiconductors, and elements under high pressure.

Evolution of magnetic and superconducting fluctuations with doping of high-Tc superconductors. An electronic Raman scattering study

International Nuclear Information System (INIS)

Blumberg, G.

1998-01-01

For YBa 2 Cu 3 O 6+δ and Bi 2 Sr 2 CaCu 2 O 3±δ superconductors, electronic Raman scattering from high- and low-energy excitations has been studied in relation to the hole doping level, temperature, and energy of the incident photons. For underdoped superconductors, it is concluded that short range antiferromagnetic (AF) correlations persist with hole doping and doped single holes are incoherent in the AF environment. Above the superconducting (SC) transition temperature T c the system exhibits a sharp Raman resonance of B 1g symmetry and about 75 meV energy and a pseudogap for electron-hole excitations below 75 meV, a manifestation of a partially coherent state forming from doped incoherent quasi-particles. The occupancy of the coherent state increases with cooling until phase ordering at T c produces a global SC state

The formation of tungsten doped Al_2O_3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

International Nuclear Information System (INIS)

Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

2016-01-01

Highlights: • Tungsten doped Al_2O_3/ZnO coatings are formed by plasma electrolytic oxidation (PEO). • Coatings are mainly composed of alpha alumina, ZnO and metallic tungsten. • Photocatalytic activity of doped Al_2O_3/ZnO coatings is higher than of undoped ones. • The increase of photoluminescence corresponds to decrease of photocatalytic activity. • Tungsten acts as a charge trap to reduce the recombination rate of electron/hole pairs. - Abstract: Tungsten doped Al_2O_3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na_2WO_4·2H_2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al_2O_3, ZnO, metallic tungsten and WO_3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al_2O_3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al_2O_3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al_2O_3/ZnO coatings is higher thanof undoped Al_2O_3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na_2WO_4·2H_2O. Tungsten in Al_2O_3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

Influence of screening effect on hydrogen passivation of hole silicon

CERN Document Server

Aleksandrov, O V

2002-01-01

The simulation of hole silicon passivation during hydrogen diffusion with account of hydrogen-acceptor pairs formation, internal electrical field and screening effect has been carried out. Screening by free carriers of hydrogen and acceptor ions results in shortening their interaction radii and slacking the concentration dependence of hydrogen diffusivity at high level of silicon doping. The consistency of simulated and experimental profiles of holes and hydrogen-acceptor pairs is reached in a broad band of doping levels from 4 x 10 sup 1 sup 4 to 1.2 x 10 sup 2 sup 0 cm sup - sup 3 at the pair binding energy of 0.70-0.79 eV while the radius of the Coulomb interaction of hydrogen and boron ions is equal to 35 A under low doping and decrease with increasing doping level

Electroluminescence properties of organic light-emitting diodes with a red dye doped into Alq{sub 3} : rubrene mixed host

Energy Technology Data Exchange (ETDEWEB)

Kang, H. Y. [Inha University, Incheon (Korea, Republic of); Lee, C. H. [Seoul National University, Seoul (Korea, Republic of)

2004-09-15

We have studied the electroluminescence (EL) properties of devices with a red fluorescent dye, 4-(dicyanomethylene)-2-t-butyl-6- (1,1,7,7-tetramethyl-julolidyl-9-enyl)--4H-py ran (DCJTB), doped into a mixed matrix of tris-(8-hydroxyquinoline)aluminum (Alq{sub 3}) and rubrene. The devices doped with DCJTB in the Alq{sub 3}:rubrene mixed host show an efficient red emission from DCJTB with negligible EL emission from both Alq{sub 3} and rubrene. The QE increases with increasing rubrene concentration and reaches a maximum of about 3.6 % for a DCJTB doping concentration of about 5 % in the Alq3:rubrene mixed (50:50 % ratio by weight) host, and then decreases at higher rubrene concentration, due to the concentration quenching effect. At a given bias voltage, the current density increases with increasing rubrene doping concentration, but it decreases with increasing DCJTB doping concentration. The results imply that the injected electrons and holes can transport via hopping through the energy levels of rubrene molecules while DCJTB acts as traps.

Investigation of a Spin Transition in a LaCoO3 Single Crystal by the Method of X-Ray Magnetic Circular Dichroism at the Cobalt K- and L 2,3-Edges

Science.gov (United States)

Sikolenko, V. V.; Troyanchuk, I. O.; Karpinsky, D. V.; Rogalev, A.; Wilhelm, F.; Rosenberg, R.; Prabhakaran, D.; Efimova, E. A.; Efimov, V. V.; Tiutiunnikov, S. I.; Bobrikov, I. A.

2018-02-01

Spin transitions of cobalt ions in LaCoO3 single crystals have been studied by the method of X-ray magnetic circular dichroism (XMCD) at the K- and L 2,3-edges of Co3+ ions. The orbital momentum of cobalt ions obtained for the K-edge at the 3 d level in the region of the spin transition in the temperature range from 25 to 120 K increases by a factor of approximately 1.6, whereas the slope of the magnetization curve value in the same temperature range and magnetic field increases by a factor of more than 10. XMCD experiments at the cobalt L 2,3-edges demonstrate gradual growth of the ratio of the orbital momentum to the spin one L/ S from 0.48 to 0.53 in the temperature range from 60 K to 120 K.

Controlling transport of the SrIrO3 correlated semimetal by doping with an ionic liquid

Science.gov (United States)

Santamaria, Jacobo; Tornos, J.; Perez-Muã+/-Oz, A.; Cabero, M.; Gallego, F.; Rivera, A.; Sefrioui, Z.; Varela, M.; Leon, C.; Garcia Barriocanal, J.; Mompean, F.; Garcia-Hernandez, M.

The interplay between Mott and spin orbit physics in 5d oxides may result from the splitting of crystal field states by the strong spin orbit interaction. Among them, SrIrO3 is a correlated semimetal, with a groundstate which has been proposed to be topologically protected by the crystalline symmetry. The strong coupling of the electronic structure to oxygen rotations and its interplay with spin orbit interaction gives rise to anomalously narrow bands. The semimetallic state results from the compensation of electron and hole carriers (pockets) coming from separated regions in momentum space. This explains how epitaxial strain enhances the asymmetry of electron hole mobilities eventually triggering a metal to insulator transition (MIT). An intriguing question is the correlated nature of this MIT, and if as such, it can be controlled by charge density. To address this question we have conducted doping experiments with ionic liquid gating. In this talk we will show that the strain induced MIT can be in fact controlled by doping indicating the role played by electron correlations in the semimetallic state of SrIrO3.

17O NMR Study of Undoped and Lightly Hole Doped CuO2 Planes

International Nuclear Information System (INIS)

Thurber, K.R.; Hunt, A.W.; Imai, T.; Chou, F.C.; Lee, Y.S.

1997-01-01

Using 17 O NMR, we probed the short wavelength excitations in the CuO 2 planes of insulating and weakly metallic high T c cuprates. We measured the spin wave damping for an S=1/2 2D quantum Heisenberg antiferromagnet for the first time. The results establish the nearly free behavior (asymptotic freedom) of the high energy spin waves, even without long range magnetic order. Light hole doping dramatically enhances the low energy excitation spectrum below 300K. copyright 1997 The American Physical Society

Dispersive heterodyne probing method for laser frequency stabilization based on spectral hole burning in rare-earth doped crystals

DEFF Research Database (Denmark)

Gobron, Olivier; Jung, K.; Galland, N.

2017-01-01

Frequency-locking a laser to a spectral hole in rare-earth doped crystals at cryogenic temperature has been shown to be a promising alternative to the use of high finesse Fabry-Perot cavities when seeking a very high short term stability laser (M. J. Thorpe et al., Nature Photonics 5, 688 (2011......)). We demonstrate here a novel technique for achieving such stabilization, based on generating a heterodyne beat-note between a master laser and a slave laser whose dephasing caused by propagation near a spectral hole generate the error signal of the frequency lock. The master laser is far detuned from...

Graphene assisted effective hole-extraction on In2O3:H/CH3NH3PbI3 interface: Studied by modulated surface spectroscopy

Science.gov (United States)

Vinoth Kumar, Sri Hari Bharath; Muydinov, Ruslan; Kol'tsova, Tat‘yana; Erfurt, Darja; Steigert, Alexander; Tolochko, Oleg; Szyszka, Bernd

2018-01-01

Charge separation in CH3NH3PbI3 (MAPbI3) films deposited on a hydrogen doped indium oxide (In2O3:H) photoelectrode was investigated by modulated surface photovoltage (SPV) spectroscopy in a fixed capacitor arrangement. It was found that In2O3:H reproducibly extracts photogenerated-holes from MAPbI3 films. The oxygen-plasma treatment of the In2O3:H surface is suggested to be a reason for this phenomenon. Introducing graphene interlayer increased charge separation nearly 6 times as compared to that on the In2O3:H/MAPbI3 interface. Furthermore, it is confirmed by SPV spectroscopy that the defects of the MAPbI3 interface are passivated by graphene.

Observation of a hidden hole-like band approaching the fermi level in K-doped iron selenide superconductor

International Nuclear Information System (INIS)

Sunagawa, Masanori; Terashima, Kensei; Hamada, Takahiro

2016-01-01

One of the ultimate goals of the study of iron-based superconductors is to identify the common feature that produces the high critical temperature (T c ). In the early days, based on a weak-coupling viewpoint, the nesting between hole- and electron-like Fermi surfaces (FSs) leading to the so-called s± state was considered to be one such key feature. However, this theory has faced a serious challenge ever since the discovery of alkali-metal-doped FeSe (AFS) superconductors, in which only electron-like FSs with a nodeless superconducting gap are observed. Several theories have been proposed, but a consistent understanding is yet to be achieved. Here we show experimentally that a hole-like band exists in K x Fe 2-y Se 2 , which presumably forms a hole-like Fermi surface. The present study suggests that AFS can be categorized in the same group as iron arsenides with both hole- and electron-like FSs present. This result provides a foundation for a comprehensive understanding of the superconductivity in iron-based superconductors. (author)

Optical decoherence and persistent spectral hole burning in Er3+:LiNbO3

International Nuclear Information System (INIS)

Thiel, C.W.; Macfarlane, R.M.; Boettger, T.; Sun, Y.; Cone, R.L.; Babbitt, W.R.

2010-01-01

Developing new resonant optical materials for spatial-spectral holography and quantum information applications requires detailed knowledge of the decoherence and population relaxation dynamics for the quantum states involved in the optical transitions, motivating the need for fundamental material studies. We report recent progress in studying these properties in erbium-doped lithium niobate at liquid helium temperatures. The influence of temperature, applied magnetic fields, measurement timescale, and dopant concentration were probed using photon echo spectroscopy and time-resolved spectral hole burning on the 1532 nm transition of Er 3+ :LiNbO 3 . Effects of spectral diffusion due to interactions between Er 3+ ions and between the Er 3+ ion and 7 Li and 93 Nb nuclear spins in the host lattice were observed. In addition, long-lived persistent spectral storage of seconds to minutes was observed due to non-equilibrium population redistribution among superhyperfine states.

Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

Science.gov (United States)

Ming, Fangfei; Johnston, Steve; Mulugeta, Daniel; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Maier, Thomas A.; Snijders, Paul C.; Weitering, Hanno H.

2017-12-01

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional s p -bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

In-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 heterostructures

Science.gov (United States)

Zhang, Jing; Yan, Xi; Han, Furong; Zhang, Jine; Liu, Dan; Shen, Baogen; Sun, Jirong

2018-05-01

The interface engineering of the complex oxides with strongly coupled degrees of freedom opens a wide space for the exploration of novel effects. La0.67Sr0.33MnO3 is one of the most typical complex oxides used for atomic level material engineering. Herein we reported an in-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 (LCO/LSMO) bilayers grown on (110)-oriented LaAlO3 substrates. Fixing the LSMO layer thickness to 8 nm and varying the LCO layer from 0 to 8 nm, totally six bilayers were fabricated. Without the LCO layer, the LSMO film exhibits an easy axis along the [1-10] direction. However, when the thickness of the LCO layer exceeds 1 nm, a signature of spin-reorientation appears; the easy axis turns from the [1-10] to the [001] direction below 225 K. This tendency is continuously enhanced by increasing the LCO. We reveal that lattice strains are different along these two directions. The magnetic anisotropy is not only controlled by lattice strain but also by structural distortion at interface. This work shows the great potential of the interface engineering with differently structured oxides for the exploration of novel functional materials.

Fabrication of a 3D active mixer based on deformable Fe-doped PDMS cones with magnetic actuation

International Nuclear Information System (INIS)

Riahi, Mohammadreza; Alizadeh, Elaheh

2012-01-01

In this paper an active 3D mixer for lab-on-chip applications is presented. The micrometer size cone shape holes are ablated on a PMMA sheet utilizing a CO 2 laser. The holes are filled with Fe micro-particles and the whole structure is molded with PDMS which cause the Fe micro-particles to be trapped in a PDMS cone structure. These Fe-doped PDMS cones are placed in a PMMA micro-channel structure fabricated by CO 2 laser machining. By applying an external periodic magnetic field, the cones periodically bend in the micro-channel and stir the fluid. The fabrication method and the effect of the magnetic field on the bending of the cones with different aspect ratios is also discussed utilizing computer simulation. Doping the polymers with micro- and nano-metallic particles has been carried out by different research groups before, but according to our knowledge, application of such structures for the fabrication of a 3D active mixer has not been presented before. (paper)

Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

Science.gov (United States)

Kim, B. W.; Majerfeld, A.

1996-02-01

We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

Field-swept pulsed electron paramagnetic resonance of Cr3+-doped ZBLAN fluoride glass

International Nuclear Information System (INIS)

Drew, S.C.; Pilbrow, J.R.; Newman, P.J.; MacFarlane, D.R.

2001-01-01

Field-swept pulsed electron paramagnetic resonance (EPR) spectra of a ZBLAN fluoride glass doped with a low concentration of Cr 3+ are obtained using echo-detected EPR and hole-burning free induction decay detection. We review the utility of the pulsed EPR technique in generating field-swept EPR spectra, as well as some of the distorting effects that are peculiar to the pulsed detection method. The application of this technique to Cr 3+ -doped ZBLAN reveals that much of the broad resonance extending from g eff =5.1 to g eff =1.97, characteristic of X-band continuous wave EPR of Cr 3+ in glasses, is absent. We attribute this largely to the variation in nutation frequencies across the spectrum that result from sites possessing large fine structure interactions. The description of the spin dynamics of such sites is complicated and we discuss some possible approaches to the simulation of the pulsed EPR spectra. (author)

Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles

Science.gov (United States)

Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo

2014-10-01

Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca2+ with Fe3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu3+ and Fe3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu3+ and Fe3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu3+ and Fe3+, and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.

Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles

International Nuclear Information System (INIS)

Chen, Min-Hua; Lin, Feng-Huei; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Tanaka, Junzo; Hanagata, Nobutaka

2014-01-01

Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications. (paper)

Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles.

Science.gov (United States)

Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo

2014-10-01

Theranostic nanoparticles currently have been regarded as an emerging concept of 'personalized medicine' with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.

Performance enhancement of perovskite solar cells with Mg-doped TiO2 compact film as the hole-blocking layer

International Nuclear Information System (INIS)

Wang, Jing; Qin, Minchao; Tao, Hong; Ke, Weijun; Chen, Zhao; Wan, Jiawei; Qin, Pingli; Lei, Hongwei; Fang, Guojia; Xiong, Liangbin; Yu, Huaqing

2015-01-01

In this letter, we report perovskite solar cells with thin dense Mg-doped TiO 2 as hole-blocking layers (HBLs), which outperform cells using TiO 2 HBLs in several ways: higher open-circuit voltage (V oc ) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO 2 as compared to TiO 2 such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and the formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V oc . In addition, the Mg-modulated TiO 2 with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device

Positron annihilation spectroscopy in doped p-type ZnO

Science.gov (United States)

Majumdar, Sayanee; Sanyal, D.

2011-07-01

Positron annihilation lifetime (PAL) spectroscopy has been used to investigate the vacancy type defect of the Li and N doped ZnO. The mono-vacancies, shallow -vacancies and open volume defects have been found in both the Li and N doped ZnO. The mono-vacancies, shallow-vacancies and open volume defects increase in N-doped ZnO as the size of N is quite high compared to Li. Positron annihilation study showed that the doping above 1-3% Li and 3-4% N in ZnO are not required in order to achieve low resistivity, high hole concentration and good mobility.

p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

International Nuclear Information System (INIS)

Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

2013-01-01

Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm 2 V −1 s −1 and a hole concentration of 1.67 × 10 17  cm −3 , respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application

All-solution processed composite hole transport layer for quantum dot light emitting diode

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiaoli [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Synergetic Innovation Center of Chemical Science and Engineering, Tianjin (China); Dai, Haitao, E-mail: htdai@tju.edu.cn [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Zhao, Junliang; Wang, Shuguo [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Sun, Xiaowei [Department of Electrical & Electronic Engineering, South University of Science and Technology of China, Tangchang Road 1088, Shenzhen, Guangdong 518055 (China)

2016-03-31

In the present work, poly-TPD and TCTA composite hole transport layer (HTL) was employed in solution processed CdSe/ZnS quantum dot light emitting diodes (QLEDs). As the doping level of TCTA can determine the carriers transport efficiency of HTL, the proper mixing ratio of TCTA and poly-TPD should be found to optimize the performance of composite HTL for QLEDs. The doping of poly-TPD by low TCTA content can make its HOMO level lower and then reduce the energy barrier height from HTL to quantum dots (QDs), whereas the doping of poly-TPD by the concentrated TCTA results in the degraded performance of QLEDs due to its decreased hole transport mobility. By using the optimized composition with poly-TPD:TCTA (3:1) as the hole transport layer, the luminescence of the device exhibits about double enhancement compared with that of poly-TPD based device. The improvement of luminescence is mainly attributed to the lower energy barrier of hole injection. The Förster resonant energy transfer (FRET) mechanism in the devices was investigated through theoretical and experimental analysis and the results indicate that the TCTA doping makes no difference on FRET. Therefore, the charge injection mechanism dominates the improved performance of the devices. - Highlights: • Quantum dot light emitting diodes (QLEDs) were fabricated by all solution method. • The performance of QLEDs was optimized by varying the composite hole transport layer. • The blend HTL could promote hole injection by optimizing HOMO levels. • The energy transfer mechanism was analyzed by studying Förster resonant energy transfer process.

Crosslinked Remote-Doped Hole-Extracting Contacts Enhance Stability under Accelerated Lifetime Testing in Perovskite Solar Cells.

Science.gov (United States)

Xu, Jixian; Voznyy, Oleksandr; Comin, Riccardo; Gong, Xiwen; Walters, Grant; Liu, Min; Kanjanaboos, Pongsakorn; Lan, Xinzheng; Sargent, Edward H

2016-04-13

A crosslinked hole-extracting electrical contact is reported, which simultaneously improves the stability and lowers the hysteresis of perovskite solar cells. Polymerizable monomers and crosslinking processes are developed to obviate in situ degradation of the under lying perovskite. The crosslinked material is band-aligned with perovskite. The required free carrier density is induced by a high-work-function metal oxide layer atop the device, following a remote-doping strategy. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanostructured TiO2/CH3NH3PbI3 heterojunction solar cells employing spiro-OMeTAD/Co-complex as hole-transporting material

KAUST Repository

Noh, Jun Hong; Jeon, Nam Joong; Choi, Yong Chan; Nazeeruddin, Md. K.; Grä tzel, Michael; Seok, Sang Il

2013-01-01

For using 2,2′,7,7′-tetrakis(N,N′-di-p- methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) as a hole conductor in solar cells, it is necessary to improve its charge-transport properties through electrochemical doping. With the aim

Progress towards 3D black hole merger simulations

International Nuclear Information System (INIS)

Seidel, E.

2001-01-01

I review recent progress in 3D numerical relativity, focused on simulations involving black holes evolved with singularity avoiding slicings, but also touching on recent results in advanced techniques like black hole excision. After a long series of axisymmetric and perturbative studies of distorted black holes and black hole collisions, similar studies were carried out with full 3D codes. The results showed that such black hole simulations can be carried out extremely accurately, although instabilities plague the simulation at uncomfortably early times. However, new formulations of Einstein's equations allow much more stable 3D evolutions than ever before, enabling the first studies of 3D gravitational collapse to a black hole. With these new formulations, for example, it has been possible to perform the first detailed simulations of 3D grazing collisions of black holes with unequal mass, spin, and with orbital angular momentum. I discuss the 3D black hole physics that can now be studied, and prospects for the future, which look increasingly bright due to recent progress in formulations, black hole excision, new gauge conditions, and larger computers. Simulations may soon be able to provide information about the final plunge of two black holes, of relevance for gravitational wave astronomy. (author)

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

2017-12-01

Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 ± 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 1016 to 1017/cm3 range is achieved for measured As concentrations between 1016 and 1020/cm3 with the highest doping efficiency of 40% occurring near 1017 As/cm3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.

The formation of tungsten doped Al{sub 2}O{sub 3}/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Stojadinović, Stevan, E-mail: sstevan@ff.bg.ac.rs [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Vasilić, Rastko [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Radić, Nenad [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Tadić, Nenad [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Stefanov, Plamen [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, 1113 Sofia (Bulgaria); Grbić, Boško [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia)

2016-07-30

Highlights: • Tungsten doped Al{sub 2}O{sub 3}/ZnO coatings are formed by plasma electrolytic oxidation (PEO). • Coatings are mainly composed of alpha alumina, ZnO and metallic tungsten. • Photocatalytic activity of doped Al{sub 2}O{sub 3}/ZnO coatings is higher than of undoped ones. • The increase of photoluminescence corresponds to decrease of photocatalytic activity. • Tungsten acts as a charge trap to reduce the recombination rate of electron/hole pairs. - Abstract: Tungsten doped Al{sub 2}O{sub 3}/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na{sub 2}WO{sub 4}·2H{sub 2}O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al{sub 2}O{sub 3}, ZnO, metallic tungsten and WO{sub 3}. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al{sub 2}O{sub 3}/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al{sub 2}O{sub 3}/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al{sub 2}O{sub 3}/ZnO coatings is higher thanof undoped Al{sub 2}O{sub 3}/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na{sub 2}WO{sub 4}·2H{sub 2}O. Tungsten in Al{sub 2}O{sub 3}/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the

Optical decoherence and persistent spectral hole burning in Er{sup 3+}:LiNbO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Thiel, C.W., E-mail: thiel@physics.montana.ed [Spectrum Lab, Montana State University, Bozeman, MT 59717 (United States); Department of Physics, Montana State University, Bozeman, MT 59717 (United States); Macfarlane, R.M. [Department of Physics, Montana State University, Bozeman, MT 59717 (United States); IBM Almaden Research Center, San Jose, CA 95120 (United States); Boettger, T. [Department of Physics, University of San Francisco, San Francisco, CA 94117 (United States); Sun, Y. [Department of Physics, University of South Dakota, Vermillion, SD 57069 (United States); Cone, R.L. [Department of Physics, Montana State University, Bozeman, MT 59717 (United States); Babbitt, W.R. [Spectrum Lab, Montana State University, Bozeman, MT 59717 (United States); Department of Physics, Montana State University, Bozeman, MT 59717 (United States)

2010-09-15

Developing new resonant optical materials for spatial-spectral holography and quantum information applications requires detailed knowledge of the decoherence and population relaxation dynamics for the quantum states involved in the optical transitions, motivating the need for fundamental material studies. We report recent progress in studying these properties in erbium-doped lithium niobate at liquid helium temperatures. The influence of temperature, applied magnetic fields, measurement timescale, and dopant concentration were probed using photon echo spectroscopy and time-resolved spectral hole burning on the 1532 nm transition of Er{sup 3+}:LiNbO{sub 3}. Effects of spectral diffusion due to interactions between Er{sup 3+} ions and between the Er{sup 3+} ion and {sup 7}Li and {sup 93}Nb nuclear spins in the host lattice were observed. In addition, long-lived persistent spectral storage of seconds to minutes was observed due to non-equilibrium population redistribution among superhyperfine states.

High-performance and environmentally stable planar heterojunction perovskite solar cells based on a solution-processed copper-doped nickel oxide hole-transporting layer.

Science.gov (United States)

Kim, Jong H; Liang, Po-Wei; Williams, Spencer T; Cho, Namchul; Chueh, Chu-Chen; Glaz, Micah S; Ginger, David S; Jen, Alex K-Y

2015-01-27

An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical properties of single doped Cr3+ and co-doped Cr3+-Nd3+ aluminum tantalum tellurite glasses

International Nuclear Information System (INIS)

Rodriguez-Mendoza, U.R.; Speghini, A.; Jaque, D.; Zambelli, M.; Bettinelli, M.

2004-01-01

The optical properties for single doped Cr 3+ and co-doped Cr 3+ -Nd 3+ aluminum tantalum tellurite glasses have been studied as a function of temperature. For the single doped glass, the existence of two bands in the emission spectra at low temperature indicates the presence of two different sites for the Cr 3+ ions, labelled as usual as low- and high-field sites. The broad band centred in the Near Infrared region, corresponds to low-field sites transition 4 T 2 → 4 A 2 , and the narrow band centred at approximately 715 nm to the high-field sites transition 2 E→ 4 A 2 . The emission intensity for both high- and low-field sites shows a strong decrease with increasing temperature, with the emission for the former sites vanishing at RT. In both cases the quenching observed with the increase of temperature can be ascribed to the presence of non-radiative relaxation mechanisms. Experimental observations for the co-doped glass show that both radiative and non-radiative energy transfer processes from Cr 3+ to Nd 3+ are present

Doping induced grain size reduction and photocatalytic performance enhancement of SrMoO{sub 4}:Bi{sup 3+}

Energy Technology Data Exchange (ETDEWEB)

Wang, Yunjian, E-mail: wangyunjianmail@163.com; Xu, Hui; Shao, Congying; Cao, Jing, E-mail: caojing@mail.ipc.ac.cn

2017-01-15

Graphical abstract: Photocatalytic performance of SrMoO{sub 4} was greatly improved by Bi{sup 3+} doping effects, including crystalline size reduction, band gap narrowing, and lattice contraction. - Highlights: • An efficient SrMoO{sub 4} photocatalyst was fabricated by Bi{sup 3+} doping under hydrothermal condition. • Bi{sup 3+} doping effects, including crystalline size reduction, band gap narrowing, and lattice contraction were discovered in SrMoO{sub 4} nanomaterials. • The photocatalytic activity was great improved on account of Bi{sup 3+} doping effects. • Photoluminescence studies found that hydroxyl radical (·OH) is the main active species in the photocatalytic degradation process. - Abstract: Ion doping is one of the most effective ways to develop photocatalysts by creating impurity levels in the energy band structure. In this paper, novel Bi{sup 3+} doped SrMoO{sub 4} (SrMoO{sub 4}:Bi{sup 3+}) nanocrystals were prepared by a simple hydrothermal method. By systematic characterizations using x-ray diffraction, infrared spectra, UV–vis spectra, X-ray photoelectron spectroscopy and transmission electron microscopy, it is demonstrated that all the samples crystallized in a single phase of scheelite structure, and particle sizes of SrMoO{sub 4}:Bi{sup 3+} gradually decreased. The Bi{sup 3+} doped nanoparticles showed lattice contraction, and band-gap narrowing. The photocatalytic activity of the samples was measured by monitoring the degradation of methylene blue dye in an aqueous solution under UV-radiation exposure. It is found that SrMoO{sub 4}:Bi{sup 3+} showed excellent activity toward photodegradation of methylene blue solution under UV light irradiation compared to the pure SrMoO{sub 4}. These observations are interpreted in terms of the Bi{sup 3+} doping effects and the increased the surface active sites, which results in the improved the ratio of surface charge carrier transfer rate and reduced the electron–hole recombination rate. These

Photocatalytic hydrogen generation enhanced by band gap narrowing and improved charge carrier mobility in AgTaO3 by compensated co-doping.

Science.gov (United States)

Li, Min; Zhang, Junying; Dang, Wenqiang; Cushing, Scott K; Guo, Dong; Wu, Nianqiang; Yin, Penggang

2013-10-14

The correlation of the electronic band structure with the photocatalytic activity of AgTaO3 has been studied by simulation and experiments. Doping wide band gap oxide semiconductors usually introduces discrete mid-gap states, which extends the light absorption but has limited benefit for photocatalytic activity. Density functional theory (DFT) calculations show that compensated co-doping in AgTaO3 can overcome this problem by increasing the light absorption and simultaneously improving the charge carrier mobility. N/H and N/F co-doping can delocalize the discrete mid-gap states created by sole N doping in AgTaO3, which increases the band curvature and the electron-to-hole effective mass ratio. In particular, N/F co-doping creates a continuum of states that extend the valence band of AgTaO3. N/F co-doping thus improves the light absorption without creating the mid-gap states, maintaining the necessary redox potentials for water splitting and preventing from charge carrier trapping. The experimental results have confirmed that the N/F-codoped AgTaO3 exhibits a red-shift of the absorption edge in comparison with the undoped AgTaO3, leading to remarkable enhancement of photocatalytic activity toward hydrogen generation from water.

Highly efficient red fluorescent organic light-emitting diodes by sorbitol-doped PEDOT:PSS

Science.gov (United States)

Zheng, Yan-Qiong; Yu, Jun-Le; Wang, Chao; Yang, Fang; Wei, Bin; Zhang, Jian-Hua; Zeng, Cheng-Hui; Yang, Yang

2018-06-01

This work shows a promising approach to improve device performance by optimizing the electron transport and hole injection layers for tetraphenyldibenzoperiflanthene (DBP):rubrene-based red fluorescent organic light-emitting diodes (OLEDs). We compared the effect of two electron transport layers (ETLs), and found that the rubrene/bathophenanthroline (Bphen) ETL-based OLED showed a much higher external quantum efficiency (EQE) (4.67%) than the Alq3 ETL-based OLED (EQE of 3.08%). The doping ratio of DBP in rubrene was tuned from 1.0 wt% to 4.5 wt%, and the 1.5 wt%-DBP:rubrene-based OLED demonstrated the highest EQE of 5.24% and lowest turn-on voltage of 2.2 V. Atomic force microscopy images indicated that 1.5 wt% DBP-doped rubrene film exhibited a regular strip shape, and this regular surface was favorable to the hole and electron recombination in the emitting layer. Finally, the sorbitol-doped poly(3, 4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was used to further improve the EQE; doping with 6 wt% sorbitol achieved the highest current efficiency of 7.03 cd A‑1 and an EQE of 7.50%. The significantly enhanced performance implies that the hole injection is a limiting factor for DBP:rubrene-based red fluorescent OLEDs.

Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

Energy Technology Data Exchange (ETDEWEB)

Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

2013-11-07

Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10{sup 21} and 2.2 × 10{sup 21} cm{sup −3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y = 0.035 varies approximately as T{sup −3/2} above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K.

Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

International Nuclear Information System (INIS)

Chen, Xi; Salta, Daniel; Zhang, Libin; Weathers, Annie; Zhou, Jianshi; Goodenough, John B.; Shi, Li

2013-01-01

Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10 21 and 2.2 × 10 21  cm −3 measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 with y = 0.035 varies approximately as T −3/2 above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K

Pyrrolic-N-doped graphene oxide/Fe2O3 mesocrystal nanocomposite: Efficient charge transfer and enhanced photo-Fenton catalytic activity

Science.gov (United States)

Liu, Bing; Tian, Lihong; Wang, Ran; Yang, Jinfeng; Guan, Rong; Chen, Xiaobo

2017-11-01

Though α-Fe2O3 has attracted much attention in photocatalytic or Fenton-catalytic degradation of organic contaminants, its performance is still unsatisfactory due to fast recombination of electrons and holes in photocatalytic process and the difficult conversion of Fe(II) and Fe(III) in Fenton reaction. Herein, a pyrrolic N-doped graphene oxide/Fe2O3 mesocrystal (NG-Fe2O3) nanocomposite with good distribution is synthesized by a simple solvothermal method and adjusting the oxygen-containing groups on graphene oxide. The morphology of NG-Fe2O3 contributes to a relatively large BET surface area and an intimate contact between NG and Fe2O3. These two important factors along with the excellent electro-conductivity of pyrrolic-N doped GO result in the efficient separation of electron-hole pairs and fast conversion of Fe(II)and Fe(III) in photo-Fenton synergistic reaction. Thus, a remarkably improved photo-Fenton catalytic activity of NG-Fe2O3 is obtained. The degrading rate on methyl blue increases by 1.5 times and the conversion rate of glyphosate increases by 2.3 times under visible light irradiation, compared to pristine α-Fe2O3 mesocrystals.

Efficient blue-green and green electroluminescent devices obtained by doping iridium complexes into hole-block material as supplementary light-emitting layer

Energy Technology Data Exchange (ETDEWEB)

Zhou, Liang [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zheng, Youxuan, E-mail: yxzheng@mail.nju.edu.cn [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Deng, Ruiping; Feng, Jing; Song, Mingxing; Hao, Zhaomin [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhang, Hongjie, E-mail: hongjie@ciac.jl.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zuo, Jinglin; You, Xiaozeng [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China)

2014-04-15

In this work, organic electroluminescent (EL) devices with dominant and supplementary light-emitting layers (EMLs) were designed to further improve the EL performances of two iridium{sup III}-based phosphorescent complexes, which have been reported to provide EL devices with slow EL efficiency roll-off. The widely used hole-block material 2,2′,2''-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) was selected as host material to construct the supplementary EML. Compared with single-EML devices, double-EMLs devices showed higher EL efficiencies, higher brightness, and lower operation voltage attributed to wider recombination zone and better balance of carriers. In addition, the insertion of supplementary EML is instrumental in facilitating carriers trapping, thus improving the color purity. Finally, high performance blue-green and green EL devices with maximum current efficiencies of 35.22 and 90.68 cd/A, maximum power efficiencies of 26.36 and 98.18 lm/W, and maximum brightness of 56,678 and 112,352 cd/m{sup 2}, respectively, were obtained by optimizing the doping concentrations. Such a device design strategy extends the application of a double EML device structure and provides a chance to simplify device fabrication processes. -- Highlights: • Electroluminescent devices with supplementary light-emitting layer were fabricated. • Doping concentrations and thicknesses were optimized. • Better balance of holes and electrons causes the enhanced efficiency. • Improved carrier trapping suppresses the emission of host material.

Electronic structure of B-doped diamond: A first-principles study

Directory of Open Access Journals (Sweden)

T. Oguchi

2006-01-01

Full Text Available Electronic structure of B-doped diamond is studied based on first-principles calculations with supercell models for substitutional and interstitial doping at 1.5–3.1 at.% B concentrations. Substitutional doping induces holes around the valence-band maximum in a rigid-band fashion. The nearest neighbor C site to B shows a large energy shift of 1s core state, which may explain reasonably experimental features in recent photoemission and X-ray absorption spectra. Doping at interstitial Td site is found to be unstable compared with that at the substitutional site

The role of deep acceptor centers in the oxidation of acceptor-doped wide-band-gap perovskites ABO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Putilov, L.P., E-mail: lev.putilov@gmail.com; Tsidilkovski, V.I.

2017-03-15

The impact of deep acceptor centers on defect thermodynamics and oxidation of wide-band-gap acceptor-doped perovskites without mixed-valence cations is studied. These deep centers are formed by the acceptor-bound small hole polarons whose stabilization energy can be high enough (significantly higher than the hole-acceptor Coulomb interaction energy). It is shown that the oxidation enthalpy ΔH{sub ox} of oxide is determined by the energy ε{sub A} of acceptor-bound states along with the formation energy E{sub V} of oxygen vacancies. The oxidation reaction is demonstrated to be either endothermic or exothermic, and the regions of ε{sub A} and E{sub V} values corresponding to the positive or negative ΔH{sub ox} are determined. The contribution of acceptor-bound holes to the defect thermodynamics strongly depends on the acceptor states depth ε{sub A}: it becomes negligible at ε{sub A} less than a certain value (at which the acceptor levels are still deep). With increasing ε{sub A}, the concentration of acceptor-bound small hole polarons can reach the values comparable to the dopant content. The results are illustrated with the acceptor-doped BaZrO{sub 3} as an example. It is shown that the experimental data on the bulk hole conductivity of barium zirconate can be described both in the band transport model and in the model of hopping small polarons localized on oxygen ions away from the acceptor centers. Depending on the ε{sub A} magnitude, the oxidation reaction can be either endothermic or exothermic for both mobility mechanisms.

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

Science.gov (United States)

Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

2016-01-01

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

International Nuclear Information System (INIS)

Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa

1989-01-01

Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm -3 , the hole mobility is ∼8 cm 2 /V·s and the resistivity is ∼35Ω· cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature. (author)

Screening dynamics in doped titanates

Energy Technology Data Exchange (ETDEWEB)

Rubensson, J.E.; Luening, J.; Eisebitt, S. [Forschungszentrum Juelich (Germany)] [and others

1997-04-01

The time scale for carrier relaxation in semiconductors is on the same order of magnitude as the life time of shallow core hole states (a few femtoseconds). Resonant Inelastic soft X-ray scattering (RIXS) which involves (virtual) excitations of core levels consequently contains information about the time development of the electronic structure on this time scale. In many cases one can treat the scattering in an absorption (SXA) followed-by-emission (SXE) picture, where simply the rates for various processes can be compared with the intermediate core hole state decay rate as an internal {open_quotes}clock{close_quotes}. By variation of x (0 < x < 1) in La{sub x}Sr{sub 1{minus}x}TiO{sub 3}, the amount of Ti d electrons in the system can be controlled. SrTiO{sub 3} (x=0) is an insulator with an empty Ti d band. With increasing x, electrons are doped into the Ti d-band, and LaTiO{sub 3} (x=1) is a Mott Hubbard insulator with a Ti 3d{sup 1} configuration. In this work the authors demonstrate that the rate for Ti 2p core hole screening in La{sub x}Sr{sub 1{minus}x}TiO{sub 3} is doping dependent. The screening rate increases with the availability of Ti 3d electrons, and they estimate it to be 3.8 x 10{sup 13}/sec in La{sub 0.05}Sr{sub 0.95}TiO{sub 3}.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Energy Technology Data Exchange (ETDEWEB)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2016-09-05

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Science.gov (United States)

Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

2016-09-01

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

Electron Number-Based Phase Diagram of Pr1 -xLaCex CuO4 -δ and Possible Absence of Disparity between Electron- and Hole-Doped Cuprate Phase Diagrams

Science.gov (United States)

Song, Dongjoon; Han, Garam; Kyung, Wonshik; Seo, Jeongjin; Cho, Soohyun; Kim, Beom Seo; Arita, Masashi; Shimada, Kenya; Namatame, Hirofumi; Taniguchi, Masaki; Yoshida, Y.; Eisaki, H.; Park, Seung Ryong; Kim, C.

2017-03-01

We performed annealing and angle resolved photoemission spectroscopy studies on electron-doped cuprate Pr1 -xLaCex CuO4 -δ (PLCCO). It is found that the optimal annealing condition is dependent on the Ce content x . The electron number (n ) is estimated from the experimentally obtained Fermi surface volume for x =0.10 , 0.15 and 0.18 samples. It clearly shows a significant and annealing dependent deviation from the nominal x . In addition, we observe that the pseudo-gap at hot spots is also closely correlated with n ; the pseudogap gradually closes as n increases. We established a new phase diagram of PLCCO as a function of n . Different from the x -based one, the new phase diagram shows similar antiferromagnetic and superconducting phases to those of hole doped ones. Our results raise a possibility for absence of disparity between the phase diagrams of electron- and hole-doped cuprates

Alternative p-doped hole transport material for low operating voltage and high efficiency organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Murawski, Caroline, E-mail: caroline.murawski@iapp.de; Fuchs, Cornelius; Hofmann, Simone; Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); Gather, Malte C. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, KY16 9SS Scotland (United Kingdom)

2014-09-15

We investigate the properties of N,N′-[(Diphenyl-N,N′-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine (BF-DPB) as hole transport material (HTL) in organic light-emitting diodes (OLEDs) and compare BF-DPB to the commonly used HTLs N,N,N′,N′-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), 2,2′,7,7′-tetrakis(N,N′-di-p-methylphenylamino)-9,9′-spirobifluorene (Spiro-TTB), and N,N′-di(naphtalene-1-yl)-N,N′-diphenylbenzidine (NPB). The influence of 2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ p-dopant) concentration in BF-DPB on the operation voltage and efficiency of red and green phosphorescent OLEDs is studied; best results are achieved at 4 wt. % doping. Without any light extraction structure, BF-DPB based red (green) OLEDs achieve a luminous efficacy of 35 .1 lm/W (74 .0 lm/W) at 1000 cd/m{sup 2} and reach a very high brightness of 10 000 cd/m{sup 2} at a very low voltage of 3.2 V (3.1 V). We attribute this exceptionally low driving voltage to the high ionization potential of BF-DPB which enables more efficient hole injection from BF-DPB to the adjacent electron blocking layer. The high efficiency and low driving voltage lead to a significantly lower luminous efficacy roll-off compared to the other compounds and render BF-DPB an excellent HTL material for highly efficient OLEDs.

Effect of 3d-transition metal doping on the shielding behavior of barium borate glasses: a spectroscopic study.

Science.gov (United States)

ElBatal, H A; Abdelghany, A M; Ghoneim, N A; ElBatal, F H

2014-12-10

UV-visible and FT infrared spectra were measured for prepared samples before and after gamma irradiation. Base undoped barium borate glass of the basic composition (BaO 40%-B2O3 60mol.%) reveals strong charge transfer UV absorption bands which are related to unavoidable trace iron impurities (Fe(3+)) within the chemical raw materials. 3d transition metal (TM)-doped glasses exhibit extra characteristic absorption bands due to each TM in its specific valence or coordinate state. The optical spectra show that TM ions favor generally the presence in the high valence or tetrahedral coordination state in barium borate host glass. Infrared absorption bands of all prepared glasses reveal the appearance of both triangular BO3 units and tetrahedral BO4 units within their characteristic vibrational modes and the TM-ions cause minor effects because of the low doping level introduced (0.2%). Gamma irradiation of the undoped barium borate glass increases the intensity of the UV absorption together with the generation of an induced broad visible band at about 580nm. These changes are correlated with suggested photochemical reactions of trace iron impurities together with the generation of positive hole center (BHC or OHC) within the visible region through generated electrons and positive holes during the irradiation process. Copyright © 2014 Elsevier B.V. All rights reserved.

Superionic Conductivity of Sm3+, Pr3+, and Nd3+ Triple-Doped Ceria through Bulk and Surface Two-Step Doping Approach.

Science.gov (United States)

Liu, Yanyan; Fan, Liangdong; Cai, Yixiao; Zhang, Wei; Wang, Baoyuan; Zhu, Bin

2017-07-19

Sufficiently high oxygen ion conductivity of electrolyte is critical for good performance of low-temperature solid oxide fuel cells (LT-SOFCs). Notably, material conductivity, reliability, and manufacturing cost are the major barriers hindering LT-SOFC commercialization. Generally, surface properties control the physical and chemical functionalities of materials. Hereby, we report a Sm 3+ , Pr 3+ , and Nd 3+ triple-doped ceria, exhibiting the highest ionic conductivity among reported doped-ceria oxides, 0.125 S cm -1 at 600 °C. It was designed using a two-step wet-chemical coprecipitation method to realize a desired doping for Sm 3+ at the bulk and Pr 3+ /Nd 3+ at surface domains (abbreviated as PNSDC). The redox couple Pr 3+ /Pr 4+ contributes to the extraordinary ionic conductivity. Moreover, the mechanism for ionic conductivity enhancement is demonstrated. The above findings reveal that a joint bulk and surface doping methodology for ceria is a feasible approach to develop new oxide-ion conductors with high impacts on advanced LT-SOFCs.

Warped AdS3 black holes

International Nuclear Information System (INIS)

Anninos, Dionysios; Li Wei; Padi, Megha; Song Wei; Strominger, Andrew

2009-01-01

Three dimensional topologically massive gravity (TMG) with a negative cosmological constant -l -2 and positive Newton constant G admits an AdS 3 vacuum solution for any value of the graviton mass μ. These are all known to be perturbatively unstable except at the recently explored chiral point μl = 1. However we show herein that for every value of μl ≠ 3 there are two other (potentially stable) vacuum solutions given by SL(2,R) x U(1)-invariant warped AdS 3 geometries, with a timelike or spacelike U(1) isometry. Critical behavior occurs at μl = 3, where the warping transitions from a stretching to a squashing, and there are a pair of warped solutions with a null U(1) isometry. For μl > 3, there are known warped black hole solutions which are asymptotic to warped AdS 3 . We show that these black holes are discrete quotients of warped AdS 3 just as BTZ black holes are discrete quotients of ordinary AdS 3 . Moreover new solutions of this type, relevant to any theory with warped AdS 3 solutions, are exhibited. Finally we note that the black hole thermodynamics is consistent with the hypothesis that, for μl > 3, the warped AdS 3 ground state of TMG is holographically dual to a 2D boundary CFT with central charges c R -formula and c L -formula.

Synthesis and characterization of Fe{sup 3+} doped TiO{sub 2} nanoparticles and films and their performance for photocurrent response under UV illumination

Energy Technology Data Exchange (ETDEWEB)

Elghniji, Kais [University of Sfax, Laboratoire Eau, Energie et Environnement (LR3E), Ecole Nationale d' Ingenieurs de Sfax, B.P. 1173, 3038 Sfax (Tunisia); Atyaoui, Atef [Centre de Recherches et des Technologies des Eaux, Technopole de Borj Cedria B.P. 273, 8020 Soliman (Tunisia); Livraghi, Stefano [Dipartimento di Chimica I.F.M and NIS, Universita degli Studi di Torino, Via P. Giuria, 7 10125 Torino (Italy); Bousselmi, Latifa [Centre de Recherches et des Technologies des Eaux, Technopole de Borj Cedria B.P. 273, 8020 Soliman (Tunisia); Giamello, Elio [Dipartimento di Chimica I.F.M and NIS, Universita degli Studi di Torino, Via P. Giuria, 7 10125 Torino (Italy); Ksibi, Mohamed, E-mail: Mohamed.Ksibi@tunet.tn [University of Sfax, Laboratoire Eau, Energie et Environnement (LR3E), Ecole Nationale d' Ingenieurs de Sfax, B.P. 1173, 3038 Sfax (Tunisia)

2012-11-15

Graphical abstract: Schematic diagram illustrating the charge transfer from excited TiO{sub 2} to the different states of Fe{sup 3+} ions; C{sub B} and V{sub B} refer to the energy levels of the conduction and valence bands of TiO{sub 2}, respectively. Highlights: Black-Right-Pointing-Pointer In this study we examine the Iron as catalyst precursor to synthesize the Fe{sup 3+} doped TiO{sub 2} nanoparticles. Black-Right-Pointing-Pointer The Fe{sup 3+} doped TiO{sub 2} catalysts show the presence of a mixed phase of anatase. Black-Right-Pointing-Pointer The iron is completely absent in the XRD pattern of the doped iron TiO{sub 2} powder. Black-Right-Pointing-Pointer The analysis of EPR result further confirms that Fe{sup 3+} ion are successfully doped in the TiO{sub 2} lattice by substituting Ti{sup 4+}. Black-Right-Pointing-Pointer Fe{sup 3+} doping can efficiently separate the photo-generated electrons and holes. - Abstract: Undoped TiO{sub 2} and Fe{sup 3+} doped (0.1, 0.3, 0.6 and 1 wt.%) TiO{sub 2} nanoparticles have been synthesized by the acid-catalyzed sol-gel method. Iron cations are introduced in the initial solution, before gelification, what promotes their lattice localization. The Fe{sup 3+} doped TiO{sub 2} films have been fabricated using a dip-coating technique. The effect of iron content on the crystalline structure, phase transformation and grain growth were determined by X-ray diffraction (XRD), Raman spectroscopy, UV-visible diffused reflectance spectroscopy (DRS) and Electron paramagnetic resonance (EPR) spectroscopy. It has demonstrated that all catalysts are composed of mixed-phase crystals of anatase and brookite with anatase as dominant phase. The crystallinity of the brookite and anatase phases decreased with increasing the iron content. The analysis of EPR result further confirms that Fe{sup 3+} ion are successfully doped in the TiO{sub 2} lattice by substituting Ti{sup 4+}. It was demonstrated that Fe{sup 3+} ion in the TiO{sub 2} films

Doping dependence of charge order in electron-doped cuprate superconductors

Science.gov (United States)

Mou, Yingping; Feng, Shiping

2017-12-01

In the recent studies of the unconventional physics in cuprate superconductors, one of the central issues is the interplay between charge order and superconductivity. Here the mechanism of the charge-order formation in the electron-doped cuprate superconductors is investigated based on the t-J model. The experimentally observed momentum dependence of the electron quasiparticle scattering rate is qualitatively reproduced, where the scattering rate is highly anisotropic in momentum space, and is intriguingly related to the charge-order gap. Although the scattering strength appears to be weakest at the hot spots, the scattering in the antinodal region is stronger than that in the nodal region, which leads to the original electron Fermi surface is broken up into the Fermi pockets and their coexistence with the Fermi arcs located around the nodal region. In particular, this electron Fermi surface instability drives the charge-order correlation, with the charge-order wave vector that matches well with the wave vector connecting the hot spots, as the charge-order correlation in the hole-doped counterparts. However, in a striking contrast to the hole-doped case, the charge-order wave vector in the electron-doped side increases in magnitude with the electron doping. The theory also shows the existence of a quantitative link between the single-electron fermiology and the collective response of the electron density.

Laser linewidth narrowing using transient spectral hole burning

Energy Technology Data Exchange (ETDEWEB)

Thiel, Charles W.; Cone, Rufus L. [Department of Physics, Montana State University, Bozeman, MT 59715 (United States); Böttger, Thomas, E-mail: tbottger@usfca.edu [Department of Physics and Astronomy, 2130 Fulton Street, University of San Francisco, San Francisco, CA 94117 (United States)

2014-08-01

We demonstrate significant narrowing of laser linewidths by high optical density materials with inhomogeneously broadened absorption. As a laser propagates through the material, the nonlinear spectral hole burning process causes a progressive self-filtering of the laser spectrum, potentially reaching values less than the homogeneous linewidth. The transient spectral hole dynamically adjusts itself to the instantaneous frequency of the laser, passively suppressing laser phase noise and side modes over the entire material absorption bandwidth without the need for electronic or optical feedback to the laser. Wide bandwidth laser phase noise suppression was demonstrated using Er{sup 3+} doped Y{sub 2}SiO{sub 5} and LiNbO{sub 3} at 1.5 μm by employing time-delayed self-heterodyne detection of an external cavity diode laser to study the spectral narrowing effect. Our method is not restricted to any particular wavelength or laser system and is attractive for a range of applications where ultra-low phase noise sources are required. - Highlights: • We demonstrate significant laser linewidths narrowing by high optical density materials. • Nonlinear spectral hole burning causes progressive self-filtering of laser spectrum. • Filter dynamically adjusts itself to the instantaneous frequency of the laser. • Demonstrated at 1.5 μm in Er{sup 3+} doped Y{sub 2}SiO{sub 5} and LiNbO{sub 3}. • Linewidth filtering is not restricted to any particular wavelength or laser system.

On the doping problem of CdTe films: The bismuth case

Energy Technology Data Exchange (ETDEWEB)

Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

2008-08-30

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

On the doping problem of CdTe films: The bismuth case

International Nuclear Information System (INIS)

Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

2008-01-01

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

Transient spectral hole burning observed on the single-molecule level in terrylene-doped biphenyl

International Nuclear Information System (INIS)

Pärs, M.; Palm, V.; Kikas, J.

2014-01-01

We use the method of fluorescence correlation spectroscopy to analyze the single-molecule (SM) spectroscopy data earlier recorded for a special type of terrylene SM impurity center (referred as “spectrally confined unstable molecule”, SCM) in an incommensurate single crystal of biphenyl. The SCM's SM line seems to be chaotically jumping around within a broad “spectral envelope” and was first considered being subject to a peculiar spectral diffusion behavior. However, our correlation analysis reveals that all the features observed for SCM at 1.8 K are consistent with an assumption that this SM center participates in a process of reversible (transient) spectral hole burning (THB) earlier observed for terrylene-doped polycrystalline biphenyl. No observations of THB processes on SM level have been so far reported for this impurity system, partially due to a low concentration of relevant impurity centers. Another reason making searching for such centers experimentally challenging is an unusual SM line behavior: the photoinduced transition to a metastable “dark state” leads to the SM line saturational broadening, which is much stronger than the triplet broadening. Hence required prolonged observation is often prevented by an SM act of persistent spectral hole burning. - Highlights: • SCM—special type of terrylene single-molecule center in incommensurate biphenyl. • An unusually stable SCM was investigated during several hours at T=1.8 K. • SCM undergoes photoinduced transitions to an unknown metastable “dark state” (DS). • The long DS lifetime causes strong saturational broadening of SCM spectral line. • SCM participates in an earlier observed process of transient hole burning

O3 fast and simple treatment-enhanced p-doped in Spiro-MeOTAD for CH3NH3I vapor-assisted processed CH3NH3PbI3 perovskite solar cells

Institute of Scientific and Technical Information of China (English)

En-Dong Jia; Xi Lou; Chun-Lan Zhou; Wei-Chang Hao; Wen-Jing Wang

2017-01-01

We demonstrate a simple and fast post-deposition treatment with high process compatibility on the hole transport material (HTM) Spiro-MeOTAD in vapor-assisted solution processed methylammonium lead triiodide (CH3NH3PbI3)-based solar cells.The prepared Co-doped p-type Spiro-MeOTAD films are treated by O3 at room temperature for 5 min,10 min,and 20 min,respectively,prior to the deposition of the metal electrodes.Compared with the traditional oxidation of Spiro-MeOTAD films overnight in dry air,our fast O3 treatment of HTM at room temperature only needs just 10 min,and a relative 40.3％ increment in the power conversion efficiency is observed with respect to the result of without-treated perovskite solar cells.This improvement of efficiency is mainly attributed to the obvious increase of the fill factor and short-circuit current density,despite a slight decrease in the open-circuit voltage.Ultraviolet photoelectron spectroscopy (UPS) and Hall effect measurement method are employed in our study to determine the changes of properties after O3 treatment in HTM.It is found that after the HTM is exposed to O3,its p-type doping level is enhanced.The enhancement of conductivity and Hall mobility of the film,resulting from the improvement in p-doping level of HTM,leads to better performances of perovskite solar cells.Best power conversion efficiencies (PCEs) of 13.05％ and 16.39％ are achieved with most properly optimized HTM via CH3NH3I vapor-assisted method and traditional single-step method respectively.

Winding strings and AdS3 black holes

International Nuclear Information System (INIS)

Troost, Jan

2002-01-01

We start a systematic study of string theory in AdS 3 black hole backgrounds. Firstly, we analyse in detail the geodesic structure of the BTZ black hole, including spacelike geodesics. Secondly, we study the spectrum for massive and massless scalar fields, paying particular attention to the connection between Sl(2,R) subgroups, the theory of special functions and global properties of the BTZ black holes. We construct classical strings that wind the black holes. Finally, we apply the general formalism to the vacuum black hole background, and formulate the boundary spacetime Virasoro algebra in terms of worldsheet operators. We moreover establish the link between a proposal for a ghost free spectrum for Sl(2,R) string propagation and the massless black hole background, thereby claryfing aspects of the AdS 3 /CFT correspondence. (author)

Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In{sub 2}O{sub 3} and NPB/Sn-doped In{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Jung, Kwanwook; Park, Soohyung; Lee, Younjoo; Youn, Yungsik [Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722 (Korea, Republic of); Shin, Hae-In; Kim, Han-Ki [Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin-si, Gyeonggi-do, 17104 (Korea, Republic of); Lee, Hyunbok, E-mail: hyunbok@kangwon.ac.kr [Department of Physics, Kangwon National University, 1 Gangwondaehak-gil, Chuncheon-si, Gangwon-do, 24341 (Korea, Republic of); Yi, Yeonjin, E-mail: yeonjin@yonsei.ac.kr [Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722 (Korea, Republic of)

2016-11-30

Highlights: • The electronic structures of IAgO and its energy level alignment with a NPB HTL were investigated using in situ UPS and XPS. • As compared to ITO, IAgO has less oxygen vacancies leading to a high work function. • The hole injection barrier at the NPB/IAgO interface (0.87 eV) is significantly lower than that at the NPB/ITO interface (1.11 eV). • IAgO could be an efficient anode material for high performance optoelectronic devices. - Abstract: The electronic structures of Ag-doped In{sub 2}O{sub 3} (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In{sub 2}O{sub 3} (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ{sub h}) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ{sub h} is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

Effects of donor doping and acceptor doping on rutile TiO2 particles for photocatalytic O2 evolution by water oxidation

Science.gov (United States)

Amano, Fumiaki; Tosaki, Ryosuke; Sato, Kyosuke; Higuchi, Yamato

2018-02-01

Crystalline defects of photocatalyst particles may be considered to be the recombination center of photoexcited electrons and holes. In this study, we investigated the photocatalytic activity of cation-doped rutile TiO2 photocatalysts for O2 evolution from an aqueous silver nitrate solution under ultraviolet light irradiation. The photocatalytic activity of rutile TiO2 was enhanced by donor doping of Ta5+ and Nb5+ with a valence higher than that of Ti4+, regardless of increased density of electrons and Ti3+ species (an electron trapped in Ti4+ sites). Conversely, acceptor doping of lower valence cations such as In3+ and Ga3+ decreased photocatalytic activity for O2 evolution by water oxidation. The doping of equal valence cations such as Sn4+ and Ge4+ hardly changed the activity of non-doped TiO2. This study demonstrates that Ti3+ species, which is a crystalline defect, enhanced the photocatalytic activity of semiconductor oxides, for example rutile TiO2 with large crystalline size.

Half-metallic ferromagnetism in Cu-doped zinc-blende ZnO from first principles study

International Nuclear Information System (INIS)

Li, X.F.; Zhang, J.; Xu, B.; Yao, K.L.

2012-01-01

Electronic structures and magnetism of Cu-doped zinc-blende ZnO have been investigated by the first-principle method based on density functional theory (DFT). The results show that Cu can induce stable ferromagnetic ground state. The magnetic moment of supercell including single Cu atom is 1.0 μ B . Electronic structure shows that Cu-doped zinc-blende ZnO is a p-type half-metallic ferromagnet. The half-metal property is mainly attribute to the crystal field splitting of Cu 3d orbital, and the ferromagnetism is dominated by the hole-mediated double exchange mechanism. Therefore, Cu-doped zinc-blende ZnO should be useful in semiconductor spintronics and other applications. - Highlights: → Magnetism of Cu-doped zinc-blende ZnO. → Cu-doped zinc-blende ZnO shows interesting half-metal character. → Total energies calculations reveal that Cu can induce ferromagnetic ground state. → Ferromagnetism dominated by the hole-mediated double exchange mechanism.

Impact effects of gamma irradiation on the optical and FT infrared absorption spectra of some Nd3+-doped soda lime phosphate glasses

Science.gov (United States)

Marzouk, M. A.; Elkashef, I. M.; Elbatal, H. A.

2018-04-01

The main aim of the present work is to study by two collective optical and FTIR spectral measurements some prepared Nd2O3-doped soda lime phosphate glasses before and after gamma irradiation with dose (9 Mrad). The spectral data reveal two strong UV absorption peaks which are correlated with unavoidable trace iron impurities beside extended additional characteristic bands due to Nd3+ ions. Gamma irradiation on the undoped glass produces slight decrease of the intensity of the UV absorption and the generation of an induced visible band and these effects are controlled with two photochemical reduction of some Fe3+ ions to Fe2+ ions together with the formation of nonbridging oxygen hole center (NBOHC) or phosphorous oxygen hole center (POHC). The impact effect of gamma irradiation on the spectra of Nd2O3-doped glasses is limited due to suggested shielding behavior of neodymium ions. FT-infrared spectra show vibrational modes due to main Q2-Q3 phosphate groups and the response of gamma irradiation of the IR spectra is low and the limited variations are related to suggested changes in some bond angles and bond lengths which cause the observed decrease to the intensities of some IR bands.

Surface chemical and photocatalytic consequences of Ca-doping of BiFeO{sub 3} as probed by XPS and H{sub 2}O{sub 2} decomposition studies

Energy Technology Data Exchange (ETDEWEB)

Zaki, Mohamed I., E-mail: mizaki@link.net [Chemistry Department, Faculty of Science, Minia University, El-Minia 61519 (Egypt); Ramadan, Wegdan [Physics Department, Faculty of Science, Alexandria University, Alexandria 21511 (Egypt); Katrib, Ali [Chemistry Department, Faculty of Science, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait); Rabee, Abdallah I.M. [Chemistry Department, Faculty of Science, Minia University, El-Minia 61519 (Egypt)

2014-10-30

Graphical abstract: - Highlights: • BiFeO{sub 3} is a modest visible-light heterogeneous photocatalyst for H{sub 2}O{sub 2} decomposition. • The ferrite activity is promoted with Ca-doping up to 10 wt%-Ca. • Favourable consequences are enhanced surface metal redoxability and oxide basicity. • Furthering doping to >10 wt%-Ca retrogresses the ferrite photocatalytic activity. • A retrogressive doping consequence is bulk phase separation of α(γ)-Fe{sub 2}O{sub 3}. - Abstract: Pure and Ca-doped Bi{sub 1−x}Ca{sub x}FeO{sub 3} samples were prepared with x = 0.0–0.2, adopting a sol–gel method. Previously reported studies performed on similarly composed and prepared samples revealed that Ca-doping, above solubility limit (namely at ≥10%-Ca), results in phase separation and formation of BiFeO{sub 3}/α(γ)-Fe{sub 2}O{sub 3} nanocomposite particles. Hetero p/n nanojunctions thus established were considered to help separating photo-generated electron–hole pairs and, therefore, explain consequent promotion of photo-Fenton catalytic activity of BiFeO{sub 3} towards methylene blue degradation in presence of H{sub 2}O{sub 2} additive. However, the encompassed decomposition of H{sub 2}O{sub 2} was not addressed. To bridge this gap of knowledge, the present investigation was designed to assess Ca-doping-effected surface chemical modifications and gauge its impact on the heterogeneous photo-/thermo-catalytic activity of BiFeO{sub 3} towards H{sub 2}O{sub 2} decomposition, by means of X-ray photoelectron spectroscopy (XPS) and H{sub 2}O{sub 2} decomposition gravimetry. XPS results revealed generation of high binding energy Bi 4f and Fe 2p states, as well as enhancement of the surface basicity, upon doping to 10%-Ca. These surface chemical consequences are rendered hardly detectable upon further increase of the dopant magnitude to 20%-Ca. In parallel, the H{sub 2}O{sub 2} decomposition activity of the ferrite, under natural visible light, is enhanced to optimize

Electronic and magnetic properties of SnS2 monolayer doped with non-magnetic elements

Science.gov (United States)

Xiao, Wen-Zhi; Xiao, Gang; Rong, Qing-Yan; Wang, Ling-Ling

2018-05-01

We performed a systematic study of the electronic structures and magnetic properties of SnS2 monolayer doped with non-magnetic elements in groups IA, IIA and IIIA based on the first-principles methods. The doped systems exhibit half-metallic and metallic natures depending on the doping elements. The formation of magnetic moment is attributable to the cooperative effect of the Hund's rule coupling and hole concentration. The spin polarization can be stabilized and enhanced through confining the delocalized impurity states by biaxial tensile strain in hole-doped SnS2 monolayer. Both the double-exchange and p-p exchange mechanisms are simultaneously responsible for the ferromagnetic ground state in those hole-doped materials. Our results demonstrate that spin polarization can be induced and controlled in SnS2 monolayers by non-magnetic doping and tensile strain.

Efficient photoelectrochemical water splitting by a doping-controlled GaN photoanode coated with NiO cocatalyst

International Nuclear Information System (INIS)

Kang, Jin-Ho; Kim, Soo Hee; Ebaid, Mohamed; Lee, June Key; Ryu, Sang-Wan

2014-01-01

Efficient photoelectrochemical (PEC) water splitting was demonstrated by a doping-controlled GaN photoanode coated with NiO cocatalyst. Highly doped n-GaN was sandwiched between undoped GaN layers to effectively collect electrons through ohmic contact. With zero external bias, the photocurrent density of the optimized doping profile was ∼3.5 times higher than that of the undoped GaN reference. However, the increased doping concentration degraded the photoanode stability, which was attributed to crystalline defects generated in the highly doped n-GaN. NiO cocatalyst improved the long-term stability of the photoanode because of GaN/NiO band alignment, enhancing hole transport into NiO and suppressing PEC corrosion mediated by hole crowding in GaN. This work established a design strategy for increasing the photocurrent as well as improving stability during water splitting with a GaN-based photoanode

Effects of pressure on doped Kondo insulators

International Nuclear Information System (INIS)

Lee, Chengchung; Xu, Wang

1999-08-01

The effects of pressure on the doped Kondo insulators (KI) are studied in the framework of the slave-boson mean-field theory under the coherent potential approximation (CPA). A unified picture for both electron-type KI and hole-type KI is presented. The density of states of the f-electrons under the applied pressures and its variation with the concentration of the Kondo holes are calculated self-consistently. The specific heat coefficient, the zero-temperature magnetic susceptibility as well as the low temperature electric resistivity of the doped KI under various pressures are obtained. The two contrasting pressure-dependent effects observed in the doped KI systems can be naturally explained within a microscopic model. (author)

The effects of antimony doping on the surface structure of rutile TiO2(110)

International Nuclear Information System (INIS)

Bechstein, Ralf; Schuette, Jens; Kuehnle, Angelika; Kitta, Mitsunori; Onishi, Hiroshi

2009-01-01

Titanium dioxide represents a very important wide bandgap photocatalyst that is known to be sensitized to visible light by transition metal doping. Antimony doping has been demonstrated to provide photocatalytic activity when codoped with chromium at an optimum dopant ratio [Sb]/[Cr] of about 1.5. Here, the role of antimony doping on the surface structure of rutile TiO 2 (110) is studied using non-contact atomic force microscopy (NC-AFM) under ultra-high vacuum conditions. At first glance, the surface structure of antimony-doped TiO 2 (110) resembles the structure of pristine TiO 2 (110). However, in contrast to what is found in pristine TiO 2 (110), a dense layer of protruding features is observed upon antimony doping, which is tentatively ascribed to antimony-rich clusters. Moreover, homogeneously distributed holes are found on the surface, which differ in depth and shape depending on the preparation conditions. Holes with depths ranging from a few up to more than a hundred monatomic steps are observed. These holes are explained by surface segregation of antimony during annealing, as the ionic radius of Sb 3+ is considerably larger than the ionic radius of Ti 4+ . Our finding provides an indication of why an antimony concentration larger than the optimum ratio results in decreased photocatalytic activity. Moreover, controlling annealing temperature seems to constitute a promising strategy for creating nanosized holes on TiO 2 surfaces.

Hole-transport material variation in fully vacuum deposited perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Polander, Lauren E.; Pahner, Paul; Schwarze, Martin; Saalfrank, Matthias; Koerner, Christian; Leo, Karl, E-mail: karl.leo@iapp.de [Institut für Angewandte Photophysik, Technische Universität Dresden, 01069 Dresden (Germany)

2014-08-01

This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH{sub 3}NH{sub 3}PbI{sub x−3}Cl{sub x} perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase versus this reference.

Hole-transport material variation in fully vacuum deposited perovskite solar cells

Directory of Open Access Journals (Sweden)

Lauren E. Polander

2014-08-01

Full Text Available This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH3NH3PbIx−3Clx perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase versus this reference.

Negligible Electronic Interaction between Photoexcited Electron-Hole Pairs and Free Electrons in Phosphorus-Boron Co-Doped Silicon Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Limpens, Rens [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Neale, Nathan R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fujii, Minoru [Kobe University; Gregorkiewicz, Tom [University of Amsterdam

2018-03-05

Phosphorus (P) and boron (B) co-doped Si nanocrystals (NCs) have raised interest in the optoelectronic industry due to their electronic tunability, optimal carrier multiplication properties, and straightforward dispersibility in polar solvents. Yet a basic understanding of the interaction of photoexcited electron-hole (e-h) pairs with new physical features that are introduced by the co-doping process (free carriers, defect states, and surface chemistry) is missing. Here, we present the first study of the ultrafast carrier dynamics in SiO2-embedded P-B co-doped Si NC ensembles using induced absorption spectroscopy through a two-step approach. First, the induced absorption data show that the large fraction of the dopants residing on the NC surface slows down carrier relaxation dynamics within the first 20 ps relative to intrinsic (undoped) Si NCs, which we interpret as enhanced surface passivation. On longer time-scales (picosecond to nanosecond regime), we observe a speeding up of the carrier relaxation dynamics and ascribe it to doping-induced trap states. This argument is deduced from the second part of the study, where we investigate multiexciton interactions. From a stochastic modeling approach we show that localized carriers, which are introduced by the P or B dopants, have minor electronic interactions with the photoexcited e-h pairs. This is understood in light of the strong localization of the introduced carriers on their original P- or B-dopant atoms, due to the strong quantum confinement regime in these relatively small NCs (<6 nm).

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

Science.gov (United States)

Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

2017-01-01

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

International Nuclear Information System (INIS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Energy Technology Data Exchange (ETDEWEB)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Rare-earth doped transparent ceramics for spectral filtering and quantum information processing

Science.gov (United States)

Kunkel, Nathalie; Ferrier, Alban; Thiel, Charles W.; Ramírez, Mariola O.; Bausá, Luisa E.; Cone, Rufus L.; Ikesue, Akio; Goldner, Philippe

2015-09-01

Homogeneous linewidths below 10 kHz are reported for the first time in high-quality Eu3+ doped Y 2O3 transparent ceramics. This result is obtained on the 7F0→5D0 transition in Eu3+ doped Y 2O3 ceramics and corresponds to an improvement of nearly one order of magnitude compared to previously reported values in transparent ceramics. Furthermore, we observed spectral hole lifetimes of ˜15 min that are long enough to enable efficient optical pumping of the nuclear hyperfine levels. Additionally, different Eu3+ concentrations (up to 1.0%) were studied, resulting in an increase of up to a factor of three in the peak absorption coefficient. These results suggest that transparent ceramics can be useful in applications where narrow and deep spectral holes can be burned into highly absorbing lines, such as quantum information processing and spectral filtering.

Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

KAUST Repository

Awan, Saif Ullah

2014-10-28

Memory and switching devices acquired new materials which exhibit ferroelectric and ferromagnetic order simultaneously. We reported multiferroic behavior in Zn1-yLiyO(0.00≤y≤0.10) nanoparticles. The analysis of transmission electron micrographs confirmed the hexagonal morphology and wurtzite crystalline structure. We investigated p-type conductivity in doped samples and measured hole carriers in range 2.4×1017/cc to 7.3×1017/cc for different Li contents. We found that hole carriers are responsible for long range order ferromagnetic coupling in Li doped samples. Room temperature ferroelectric hysteresis loops were observed in 8% and 10% Li doped samples. We demonstrated ferroelectric coercivity (remnant polarization) 2.5kV/cm (0.11 μC/cm2) and 2.8kV/cm (0.15 μC/cm2) for y=0.08 and y=0.10 samples. We propose that the mechanism of Li induced ferroelectricity in ZnO is due to indirect dipole interaction via hole carriers. We investigated that if the sample has hole carriers ≥5.3×1017/cc, they can mediate the ferroelectricity. Ferroelectric and ferromagnetic measurements showed that higher electric polarization and larger magnetic moment is attained when the hole concentration is larger and vice versa. Our results confirmed the hole dependent coexistence of ferromagnetic and ferroelectric behavior at room temperature, which provide potential applications for switchable and memory devices.

Hole doping by pressure on the 1111 pnictides CaFeAsF and SrFeAsF

International Nuclear Information System (INIS)

Freitas, Daniele C; Sow, Amadou; Núñez-Regueiro, Manuel; Garbarino, Gastón; Weht, Ruben; Zhu, Xiyu; Han, Fei; Cheng, Peng; Ju, Jing; Hu Wen, Hai

2014-01-01

We determine the pressure phase diagram of the 1111 compounds CaFeAsF and SrFeAsF, up to 20 GPa and down to 4 K by electrical resistivity measurements and the change of structure up to 40 GPa at room temperature. The antiferromagnetic transition temperature, as determined by the derivative peak, shows a minimum at ∼5 GPa (10 GPa) for the Ca (Sr) compound. For CaFeAsF, superconductivity appears at this minimum, coincident with the development of a previously reported monoclinic phase. For SrFeAsF, where the orthorhombic and the monoclinic phase were reported to coexist, superconductivity exists above P≥1 GPa. Both phase diagrams can be scaled by a shift of ∼10 GPa pressure at which the volume of SrFeAsF and that of CaFeAsF at ambient pressure coincide. The difference of our phase diagram with that of electron-doped 1111 samples is accounted for by hole doping under pressure, which we verified through electron band structure calculations. (papers)

The effects of antimony doping on the surface structure of rutile TiO{sub 2}(110)

Energy Technology Data Exchange (ETDEWEB)

Bechstein, Ralf; Schuette, Jens; Kuehnle, Angelika [Fachbereich Physik, Universitaet Osnabrueck, Barbarastrasse 7, D-49076 Osnabrueck (Germany); Kitta, Mitsunori; Onishi, Hiroshi [Department of Chemistry, Kobe University, Rokko-dai, Nada-ku, Kobe 657-8501 (Japan)], E-mail: kuehnle@uos.de

2009-07-01

Titanium dioxide represents a very important wide bandgap photocatalyst that is known to be sensitized to visible light by transition metal doping. Antimony doping has been demonstrated to provide photocatalytic activity when codoped with chromium at an optimum dopant ratio [Sb]/[Cr] of about 1.5. Here, the role of antimony doping on the surface structure of rutile TiO{sub 2}(110) is studied using non-contact atomic force microscopy (NC-AFM) under ultra-high vacuum conditions. At first glance, the surface structure of antimony-doped TiO{sub 2}(110) resembles the structure of pristine TiO{sub 2}(110). However, in contrast to what is found in pristine TiO{sub 2}(110), a dense layer of protruding features is observed upon antimony doping, which is tentatively ascribed to antimony-rich clusters. Moreover, homogeneously distributed holes are found on the surface, which differ in depth and shape depending on the preparation conditions. Holes with depths ranging from a few up to more than a hundred monatomic steps are observed. These holes are explained by surface segregation of antimony during annealing, as the ionic radius of Sb{sup 3+} is considerably larger than the ionic radius of Ti{sup 4+}. Our finding provides an indication of why an antimony concentration larger than the optimum ratio results in decreased photocatalytic activity. Moreover, controlling annealing temperature seems to constitute a promising strategy for creating nanosized holes on TiO{sub 2} surfaces.

The enhanced visible light photocatalytic activity of yttrium-doped BiOBr synthesized via a reactable ionic liquid

Energy Technology Data Exchange (ETDEWEB)

He, Minqiang; Li, Weibing [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Xia, Jiexiang, E-mail: xjx@ujs.edu.cn [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Xu, Li; Di, Jun [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Xu, Hui [School of the Environment, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Yin, Sheng [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Li, Huaming, E-mail: lhm@ujs.edu.cn [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China); Li, Mengna [School of Chemistry and Chemical Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013 (China)

2015-03-15

Graphical abstract: Yttrium (Y)-doped BiOBr with different Y doping concentrations has been synthesized via solvothermal method in the presence of reactable ionic liquid 1-hexadecyl-3-methylimidazolium bromide ([C16mim]Br). The photocatalytic activities of the yttrium doped BiOBr samples were evaluated by the degradation of ciprofloxacin (CIP) and rhodamine B (RhB) under visible-light irradiation. The yttrium doped BiOBr exhibited enhanced photocatalytic activity for the degradation of the two types of pollutants, and the 5wt%Y-doped BiOBr showed the highest photocatalytic activity. The enhanced photocatalytic performance could be attributed to the reduced band gap and improved separation of electron–hole pairs. - Highlights: • Yttrium (Y)-doped BiOBr composites have been synthesized via solvothermal method in the presence of reactable ionic liquid [C16mim]Br. • The yttrium doped BiOBr exhibited enhanced photocatalytic activity for the degradation of ciprofloxacin (CIP) and rhodamine B (RhB). • The enhanced photocatalytic performance could be attributed to the reduced band gap and improved separation of electron–hole pairs. - Abstract: Yttrium (Y)-doped BiOBr with different Y doping concentrations has been synthesized via solvothermal method in the presence of reactable ionic liquid 1-hexadecyl-3-methylimidazolium bromide ([C{sub 16}mim]Br). Their structures, morphologies and optical properties were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and UV–vis diffuse reflectance spectroscopy (DRS). The photocatalytic activities of the yttrium doped BiOBr samples were evaluated by the degradation of ciprofloxacin (CIP) and rhodamine B (RhB) under visible-light irradiation. The yttrium doped BiOBr exhibited enhanced photocatalytic activity for the degradation of the two types of pollutants, and the 5wt%Y-doped BiOBr showed the highest

Two-particle self-consistent analysis for the electron-hole asymmetry of superconductivity in cuprate superconductors

Energy Technology Data Exchange (ETDEWEB)

Ogura, Daisuke; Kuroki, Kazuhiko [Department of Physics, Graduate School of Science, Osaka University, Toyonaka (Japan)

2017-06-15

In the hole-doped type cuprate superconductors, it is well-known that the superconducting transition temperature T{sub c} exhibits a dome-like structure against doping. On the other hand, recent experiments unveil that T{sub c} in the electron-doped compounds shows a monotonic increase with decreasing the doping, at least down to a very small doping rate. Our recent study for the three-band d-p model has unveiled that this asymmetric behavior can be explained as a combined effect of the intrinsic electron-hole asymmetry in systems comprising Cu3 d and O2 p orbitals and the band-filling-dependent vertex correction. In the present study, we study another compound Tl{sub 2} Ba{sub 2} CuO{sub 6} to show that this explanation can be applied to other cuprate superconductors with the small d{sub z{sup 2}} orbital mixture. By varying the d-p offset, we also study how the strength of the d-p hybridization controls the spin fluctuation and hence the pairing interaction. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A hole modulator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Al2O3 doping of TiO2 electrodes and applications in dye-sensitized solar cells

International Nuclear Information System (INIS)

Eom, Tae Sung; Kim, Kyung Hwan; Bark, Chung Wung; Choi, Hyung Wook

2014-01-01

Dye-sensitized solar cells (DSSCs) have been intensively studied since their discovery in 1991. DSSCs have been extensively researched over the past decades as cheaper alternatives to silicon solar cells due to their high energy-conversion efficiency and their low production cost. However, some problems need to be solved in order to enhance the efficiency of DSSCs. In particular, the electron recombination that occurs due to the contact between the transparent conductive oxide (TCO) and a redox electrolyte is one of the main limiting factors of efficiency. In this work, we report for the first time the improvement of the photovoltaic characteristics of DSSCs by doping TiO 2 with Al 2 O 3 . DSSCs were constructed using composite particles of Al 2 O 3 -doped TiO 2 and TiO 2 nanoparticles. The DSSCs using Al 2 O 3 showed the maximum conversion efficiency of 6.29% due to effective electron transport. DSSCs based on Al 2 O 3 -doped TiO 2 films showed better photovoltaic performance than cells fabricated with only TiO 2 nanoparticles. This result is attributed to the prevention of electron recombination between electrons in the TiO 2 conduction band with holes in the dye or the electrolyte. There mechanism is suggested based on impedance results, which indicated improved electron transport at the TiO 2 /dye/electrolyte interface.

First Principle Quantum Description of the Energetics Associated with LaBr3, LaCl3, and Ce Doped Scintillators

International Nuclear Information System (INIS)

Michael E. McIlwain; Da Gao; Nick Thompson

2007-01-01

Considerable interest is given to the excellent scintillation properties of cerium doped lanthanum chloride (LaCl3) and lanthanum bromide (LaBr3). The scintillation efficiencies are much greater than other materials, even those containing cerium. This high efficiency is attributed to the high mobility of electrons and holes, unique placement of the cerium 5d states within the band gap, and energy of the band gap. To better understand the scintillation process and better define the nature of the Self Trapped Exciton (STE) within these unique scintillation materials, density functional theory (DFT), and Ab-initio (HF-MP2) calculations are reported. DFT calculations have yielded a qualitative description of the orbital composition and energy distribution of the band structure in the crystalline material. MP2 and single configuration interaction calculations have provided quantitative values for the band gap and provided energies for the possible range of excited states created following hole and electron creation. Based on this theoretical treatment, one possible description of the STE is the combination of Vk center (Br2-1) and LaBr+1 species that recombine to form a distorted geometry LaBr3* (triplet state). Depending on the distance between the LaBr and Br2, the STE emission band can be reproduced

Remarkable Enhancement of the Hole Mobility in Several Organic Small-Molecules, Polymers, and Small-Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p-Dopant B(C6F5)3

KAUST Repository

Panidi, Julianna; Paterson, Alexandra F.; Khim, Dongyoon; Fei, Zhuping; Han, Yang; Tsetseris, Leonidas; Vourlias, George; Patsalas, Panos A.; Heeney, Martin; Anthopoulos, Thomas D.

2017-01-01

Improving the charge carrier mobility of solution-processable organic semiconductors is critical for the development of advanced organic thin-film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small-molecules, polymers, and small-molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C6F5)(3) in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C6F5)(3) is shown to have a remarkable impact are the blends of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF-TESADT:PTAA) and 2,7-dioctyl[1]-benzothieno[3,2-b][1]benzothiophene:poly(indacenodithiophene-co-benzothiadiazole) (C8-BTBT:C16-IDTBT), for which hole mobilities of 8 and 11 cm(2) V-1 s(-1), respectively, are obtained. Doping of the 6,13-bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C6F5)(3) is also shown to increase the maximum hole mobility to 3.7 cm(2) V-1 s(-1). Analysis of the single and multicomponent materials reveals that B(C6F5)(3) plays a dual role, first acting as an efficient p-dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p-doping and dopant-induced long-range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics.

Remarkable Enhancement of the Hole Mobility in Several Organic Small-Molecules, Polymers, and Small-Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p-Dopant B(C6F5)3.

Science.gov (United States)

Panidi, Julianna; Paterson, Alexandra F; Khim, Dongyoon; Fei, Zhuping; Han, Yang; Tsetseris, Leonidas; Vourlias, George; Patsalas, Panos A; Heeney, Martin; Anthopoulos, Thomas D

2018-01-01

Improving the charge carrier mobility of solution-processable organic semiconductors is critical for the development of advanced organic thin-film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small-molecules, polymers, and small-molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C 6 F 5 ) 3 in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C 6 F 5 ) 3 is shown to have a remarkable impact are the blends of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF-TESADT:PTAA) and 2,7-dioctyl[1]-benzothieno[3,2-b][1]benzothiophene:poly(indacenodithiophene-co-benzothiadiazole) (C8-BTBT:C16-IDTBT), for which hole mobilities of 8 and 11 cm 2 V -1 s -1 , respectively, are obtained. Doping of the 6,13-bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C 6 F 5 ) 3 is also shown to increase the maximum hole mobility to 3.7 cm 2 V -1 s -1 . Analysis of the single and multicomponent materials reveals that B(C 6 F 5 ) 3 plays a dual role, first acting as an efficient p-dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p-doping and dopant-induced long-range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics.

Remarkable Enhancement of the Hole Mobility in Several Organic Small-Molecules, Polymers, and Small-Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p-Dopant B(C6F5)3

KAUST Repository

Panidi, Julianna

2017-10-05

Improving the charge carrier mobility of solution-processable organic semiconductors is critical for the development of advanced organic thin-film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small-molecules, polymers, and small-molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C6F5)(3) in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C6F5)(3) is shown to have a remarkable impact are the blends of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF-TESADT:PTAA) and 2,7-dioctyl[1]-benzothieno[3,2-b][1]benzothiophene:poly(indacenodithiophene-co-benzothiadiazole) (C8-BTBT:C16-IDTBT), for which hole mobilities of 8 and 11 cm(2) V-1 s(-1), respectively, are obtained. Doping of the 6,13-bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C6F5)(3) is also shown to increase the maximum hole mobility to 3.7 cm(2) V-1 s(-1). Analysis of the single and multicomponent materials reveals that B(C6F5)(3) plays a dual role, first acting as an efficient p-dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p-doping and dopant-induced long-range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics.

Sm 3+-doped polymer optical waveguide amplifiers

Science.gov (United States)

Huang, Lihui; Tsang, Kwokchu; Pun, Edwin Yue-Bun; Xu, Shiqing

2010-04-01

Trivalent samarium ion (Sm 3+) doped SU8 polymer materials were synthesized and characterized. Intense red emission at 645 nm was observed under UV laser light excitation. Spectroscopic investigations show that the doped materials are suitable for realizing planar optical waveguide amplifiers. About 100 μm wide multimode Sm 3+-doped SU8 channel waveguides were fabricated using a simple UV exposure process. At 250 mW, 351 nm UV pump power, a signal enhancement of ˜7.4 dB at 645 nm was obtained for a 15 mm long channel waveguide.

Photovoltaic properties of Cu-doped CH3NH3PbI3 with perovskite structure

Science.gov (United States)

Shirahata, Yasuhiro; Oku, Takeo

2017-01-01

Photovoltaic properties of copper (Cu)-doped perovskite (CH3NH3PbCuxI3+x) photovoltaic devices with different Cu content were investigated. The CH3NH3PbCuxI3+x films were polycrystalline with a tetragonal system, and their lattice constants and crystallite size varied with Cu doping. Compared to conversion efficiencies of non-doped CH3NH3PbI3 photovoltaic device, those of CH3NH3PbCuxI3+x photovoltaic devises increased. The improvement of photovoltaic properties was attributed to partial substitution of Cu at the Pb sites.

Dynamical 3-Space: Black Holes in an Expanding Universe

Directory of Open Access Journals (Sweden)

Rothall D. P.

2013-10-01

Full Text Available Black holes are usually studied without including effects of the expanding universe. However in some recent studies black holes have been embedded in an expanding universe, in order to determine the interplay, if any, of these two dynamical processes. Dynamical 3-space theory contains time independent solutions for black holes, which are spatial in-flows, and separately the time dependent Hubble expansion. This theory has explained numerous puzzles in observational astrophysics and contains 3 constants; G, - which from experimental data turns out to be the fine structure constant, and - which is a small but nonzero distance, possibly a Planck-type length. The Hubble expansion in the dynamical 3-space theory cannot be “switched o”, forcing the study, first, of isolated black holes coexisting with the expanding universe. It is shown that a time dependent black hole and expanding universe solution exists. The nature and implications of these solutions are discussed as they evolve over time. A dynamical network of black holes and induced linking cosmic filaments forming bubble structures is discussed, as a consequence of dynamical 3-space undergoing a dynamical breakdown of homogeneity and isotropy, even in the absence of baryonic matter.

Rare-earth doped transparent ceramics for spectral filtering and quantum information processing

Energy Technology Data Exchange (ETDEWEB)

Kunkel, Nathalie, E-mail: nathalie.kunkel@chimie-paristech.fr; Goldner, Philippe, E-mail: philippe.goldner@chimie-paristech.fr [PSL Research University, Chimie ParisTech–CNRS, Institut de Recherche de Chimie Paris, 11 rue Pierre et Marie Curie, 75005 Paris (France); Ferrier, Alban [PSL Research University, Chimie ParisTech–CNRS, Institut de Recherche de Chimie Paris, 11 rue Pierre et Marie Curie, 75005 Paris (France); Sorbonnes Universités, UPMC Univ Paris 06, 75005 Paris (France); Thiel, Charles W.; Cone, Rufus L. [Department of Physics, Montana State University, Bozeman, Montana 59717 (United States); Ramírez, Mariola O.; Bausá, Luisa E. [Departamento Física de Materiales and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Ikesue, Akio [World Laboratory, Mutsuno, Atsuta-ku, Nagoya 456-0023 (Japan)

2015-09-01

Homogeneous linewidths below 10 kHz are reported for the first time in high-quality Eu{sup 3+} doped Y {sub 2}O{sub 3} transparent ceramics. This result is obtained on the {sup 7}F{sub 0}→{sup 5}D{sub 0} transition in Eu{sup 3+} doped Y {sub 2}O{sub 3} ceramics and corresponds to an improvement of nearly one order of magnitude compared to previously reported values in transparent ceramics. Furthermore, we observed spectral hole lifetimes of ∼15 min that are long enough to enable efficient optical pumping of the nuclear hyperfine levels. Additionally, different Eu{sup 3+} concentrations (up to 1.0%) were studied, resulting in an increase of up to a factor of three in the peak absorption coefficient. These results suggest that transparent ceramics can be useful in applications where narrow and deep spectral holes can be burned into highly absorbing lines, such as quantum information processing and spectral filtering.

Temperature and doping dependence of the high-energy kink in cuprates.

Science.gov (United States)

Zemljic, M M; Prelovsek, P; Tohyama, T

2008-01-25

It is shown that spectral functions within the extended t-J model, evaluated using the finite-temperature diagonalization of small clusters, exhibit the high-energy kink in single-particle dispersion consistent with recent angle-resolved photoemission results on hole-doped cuprates. The kink and waterfall-like features persist up to large doping and to temperatures beyond J; hence, the origin can be generally attributed to strong correlations and incoherent hole propagation at large binding energies. In contrast, our analysis predicts that electron-doped cuprates do not exhibit these phenomena in photoemission.

Thermoelectric properties of doped BaHfO_3

International Nuclear Information System (INIS)

Dixit, Chandra Kr.; Bhamu, K. C.; Sharma, Ramesh

2016-01-01

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO_3 by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO_3 doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO_3 is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO_3 is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

Synthesis and characterization of Fe3+ doped TiO2 nanoparticles and films and their performance for photocurrent response under UV illumination

International Nuclear Information System (INIS)

Elghniji, Kais; Atyaoui, Atef; Livraghi, Stefano; Bousselmi, Latifa; Giamello, Elio; Ksibi, Mohamed

2012-01-01

Graphical abstract: Schematic diagram illustrating the charge transfer from excited TiO 2 to the different states of Fe 3+ ions; C B and V B refer to the energy levels of the conduction and valence bands of TiO 2 , respectively. Highlights: ► In this study we examine the Iron as catalyst precursor to synthesize the Fe 3+ doped TiO 2 nanoparticles. ► The Fe 3+ doped TiO 2 catalysts show the presence of a mixed phase of anatase. ► The iron is completely absent in the XRD pattern of the doped iron TiO 2 powder. ► The analysis of EPR result further confirms that Fe 3+ ion are successfully doped in the TiO 2 lattice by substituting Ti 4+ . ► Fe 3+ doping can efficiently separate the photo-generated electrons and holes. - Abstract: Undoped TiO 2 and Fe 3+ doped (0.1, 0.3, 0.6 and 1 wt.%) TiO 2 nanoparticles have been synthesized by the acid-catalyzed sol–gel method. Iron cations are introduced in the initial solution, before gelification, what promotes their lattice localization. The Fe 3+ doped TiO 2 films have been fabricated using a dip-coating technique. The effect of iron content on the crystalline structure, phase transformation and grain growth were determined by X-ray diffraction (XRD), Raman spectroscopy, UV–visible diffused reflectance spectroscopy (DRS) and Electron paramagnetic resonance (EPR) spectroscopy. It has demonstrated that all catalysts are composed of mixed-phase crystals of anatase and brookite with anatase as dominant phase. The crystallinity of the brookite and anatase phases decreased with increasing the iron content. The analysis of EPR result further confirms that Fe 3+ ion are successfully doped in the TiO 2 lattice by substituting Ti 4+ . It was demonstrated that Fe 3+ ion in the TiO 2 films plays a role as the intermediate for the efficient separation of photogenerated hole–electron pairs and increases the photocurrent response of the film under UV light irradiation. The maximum photocurrent is obtained on the Fe 3+ doped Ti

Enhancing visible light photocatalytic and photocharge separation of (BiO)_2CO_3 plate via dramatic I"− ions doping effect

International Nuclear Information System (INIS)

Liang, Lei; Cao, Jing; Lin, Haili; Guo, Xiaomin; Zhang, Meiyu; Chen, Shifu

2016-01-01

Highlights: • Novel I-(BiO)_2CO_3 was prepared by a facile chemical precipitation method. • I"− ions impurity level located on the top of valence band of (BiO)_2CO_3. • I"− ions doping largely improved photocatalytic activity of I-(BiO)_2CO_3. • I-(BiO)_2CO_3 displayed excellent photocharge separation efficiency. - Abstract: Novel I"− ions doped (BiO)_2CO_3 (I-(BiO)_2CO_3) photocatalysts were successfully synthesized via a facile chemical precipitation method. Under visible light (λ > 400 nm), I-(BiO)_2CO_3 displayed much higher activity for rhodamine B and dichlorophenol degradation than the undoped (BiO)_2CO_3. The pseudo-first-order rate constant k_a_p_p of RhB degradation over 15.0% I-(BiO)_2CO_3 was 0.54 h"−"1, which is 11.3 times higher than that of (BiO)_2CO_3. The doped I"− ions formed an impurity level on the top of valence band of (BiO)_2CO_3 and induced much more visible light to be absorbed. The enhanced photocurrent and surface photovoltage properties were detected, which strongly ensures the efficient separation of electrons and holes in I-(BiO)_2CO_3 system under visible light. It provides a facile way to improve the photocatalytic activity of the wide-band-gap (BiO)_2CO_3 via intense doping effect of I"− ions.

Prospects and limitations for p-type doping in boron nitride polymorphs

Science.gov (United States)

Weston, Leigh; van de Walle, Chris G.

Using first-principles calculations, we examine the potential for p-type doping of BN polymorphs via substitutional impurities. Based on density functional theory with a hybrid functional, our calculations reveal that group-IV elements (C, Si) substituting at the N site result in acceptor levels that are more than 1 eV above the valence-band maximum in all of the BN polymorphs, and hence far too deep to allow for p-type doping. On the other hand, group-II elements (Be, Mg) substituting at the B site lead to shallower acceptor levels. However, for the ground-state hexagonal phase (h-BN), we show that p-type doping at the B site is inhibited by the formation of hole polarons. Our calculations reveal that hole localization is intrinsic to sp2 bonded h-BN, and this places fundamental limits on hole conduction in this material. In contrast, the sp3 bonded wurtzite (w-BN) and cubic (c-BN) polymorphs are capable of forming shallow acceptor levels. For Be dopants, the acceptor ionization energies are 0.31 eV and 0.24 eV for w-BN and c-BN, respectively; these values are only slightly larger than the ionization energy of the Mg acceptor in GaN. This work was supported by NSF.

Surface damages of polycrystalline W and La2O3-doped W induced by high-flux He plasma irradiation

Science.gov (United States)

Liu, Lu; Li, Shouzhe; Liu, Dongping; Benstetter, Günther; Zhang, Yang; Hong, Yi; Fan, Hongyu; Ni, Weiyuan; Yang, Qi; Wu, Yunfeng; Bi, Zhenhua

2018-04-01

In this study, polycrystalline tungsten (W) and three oxide dispersed strengthened W with 0.1 vol %, 1.0 vol % and 5.0 vol % lanthanum trioxide (La2O3) were irradiated with low-energy (200 eV) and high-flux (5.8 × 1021 or 1.4 × 1022 ions/m2ṡs) He+ ions at elevated temperature. After He+ irradiation at a fluence of 3.0 × 1025/m2, their surface damages were observed by scanning electron microscopy, energy dispersive spectroscopy, scanning electron microscopy-electron backscatter diffraction, and conductive atomic force microscopy. Micron-sized holes were formed on the surface of W alloys after He+ irradiation at 1100 K. Analysis shows that the La2O3 grains doped in W were sputtered preferentially by the high-flux He+ ions when compared with the W grains. For irradiation at 1550 K, W nano-fuzz was formed at the surfaces of both polycrystalline W and La2O3-doped W. The thickness of the fuzz layers formed at the surface of La2O3-doped W is 40% lower than the one of polycrystalline W. The presence of La2O3 could suppress the diffusion and coalescence of He atoms inside W, which plays an important role in the growth of nanostructures fuzz.

A hole modulator for InGaN/GaN light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-01-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm 2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs

Chemical disorder influence on magnetic state of optimally-doped La0.7Ca0.3MnO3

Science.gov (United States)

Rozenberg, E.; Auslender, M.; Shames, A. I.; Jung, G.; Felner, I.; Tsindlekht, M. I.; Mogilyansky, D.; Sominski, E.; Gedanken, A.; Mukovskii, Ya. M.; Gorodetsky, G.

2011-10-01

X-band electron magnetic resonance and dc/ac magnetic measurements have been employed to study the effects of chemical disorder on magnetic ordering in bulk and nanometer-sized single crystals and bulk ceramics of optimally-doped La0.7Ca0.3MnO3 manganite. The magnetic ground state of bulk samples appeared to be ferromagnetic with the lower Curie temperature and higher magnetic homogeneity in the vicinity of the ferromagnetic-paramagnetic phase transition in the crystal, as compared with those characteristics in the ceramics. The influence of technological driven "macroscopic" fluctuations of Ca-dopant level in crystal and "mesoscopic" disorder within grain boundary regions in ceramics was proposed to be responsible for these effects. Surface spin disorder together with pronounced inter-particle interactions within agglomerated nano-sample results in well defined core/shell spin configuration in La0.7Ca0.3MnO3 nano-crystals. The analysis of the electron paramagnetic resonance data enlightened the reasons for the observed difference in the magnetic order. Lattice effects dominate the first-order nature of magnetic phase transition in bulk samples. However, mesoscale chemical disorder seems to be responsible for the appearance of small ferromagnetic polarons in the paramagnetic state of bulk ceramics. The experimental results and their analysis indicate that a chemical/magnetic disorder has a strong impact on the magnetic state even in the case of mostly stable optimally hole-doped manganites.

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

International Nuclear Information System (INIS)

Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

2010-01-01

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Redox behavior of a low-doped Pr-CeO_2(111) surface. A DFT+U study

International Nuclear Information System (INIS)

Milberg, Brian; Juan, Alfredo; Irigoyen, Beatriz

2017-01-01

Highlights: • Pr doping facilitates oxygen donation due to the easy formation of Pr"3"+/Pr"4"+ and Ce"3"+/Ce"4"+ redox couples. • Pr doping also favors the formation of superoxide (O_2"−) radicals on surface O-holes. • CO can be oxidized by superoxide radical forming a CO_2 molecule floating on the surface. • CO can also interact on the (O_2"−)/Pr"3"+ interphase and forms weakly adsorbed carbonate-type intermediates. - Abstract: In this work, we investigated the redox behavior (donation and replenishing of oxygen) of a low praseodymium (Pr)-doped CeO_2(111) surface. We considered a 3.7 at.% Pr doping and performed density functional calculations using the GGA formalism with the ‘U’ correction on Ce(4f) and Pr(4f) orbitals. Our results indicate that Pr doping promotes oxygen donation by lowering the energy necessary to form surface anionic vacancies. When the Ce_0_._9_6_3Pr_0_._0_3_7O_2(111) surface donates one oxygen, the two excess electrons locate on Pr and Ce cations and reduce them to Pr"3"+ and Ce"3"+ ones. Praseodymium doping also favors the activation of O_2 molecule on surface O-holes, leading to formation of a superoxide (O_2"−) radical as well as to reoxidation of the Ce"3"+ cation to Ce"4"+ one. Additionally, we used the CO molecular adsorption for testing the reactivity of those superoxide species. The calculations expose the ability of these radicals to oxidize CO forming a CO_2 molecule floating on the surface. However, when the superoxide is in the immediate vicinity of Pr dopant a carbonate-type species is formed. Our theoretical results may help to gain insight into redox properties and improved catalytic performance of low-doped Pr-CeO_2 solids.

Interconnection between zero resistance and magnetic irreversibility temperatures in the hole doped Y0.9Ca0.1Ba2Cu3O7-δ single crystal

International Nuclear Information System (INIS)

Macedo, D G; Vieira, V N; Dias, F T; Silva, D L da; Jaeckel, S; Pureur, P; Schaf, J

2014-01-01

We report on ac magnetoresistance, R(T,H) and ZFC [M ZFC (T)] and FCC [M FCC (T)] dc magnetizations measurements of the a hole doped Y 0.9 Ca 0.1 Ba 2 Cu 3 O 7-δ single crystal with the propose of to disclose the correlation between the zero resistance, T R0 (H) and the magnetic irreversibility, T irr (H) temperatures. The R(T,H) measurements were performed with a PPMS with the measurement current density applied parallel to the sample ab plane. The M ZFC (T) and M FCC (T) measurements were performed with a commercial SQUID magnetometer. For the both measurements H ≤ 50kOe were applied parallel to the c axis of the sample. The contrasting of the T irr (H) and T R0 (H) data profile at H-T diagram shows that for H ≤ 5kOe the T R0 (H) data falls systematically underneath of the T irr (H) data and for H > 5kOe the T R0 (H) data matches to the T irr (H) data. We attributed to the establishment of a superconducting granular scenario provided for Ca doping as responsible for the observation of these features. At this scenario, T irr (H) and T R0 (H) do not depend of the same parts of the sample. While the T irr (H) depends on well coupled grain clusters the T R0 (H) depends on grain arrays traversing the whole sample. The granular aspect of this result is discussed at the light of the superconducting glass theories

The effect of Bi3+ and Li+ co-doping on the luminescence characteristics of Eu3+-doped aluminum oxide films

International Nuclear Information System (INIS)

Padilla-Rosales, I.; Martinez-Martinez, R.; Cabañas, G.; Falcony, C.

2015-01-01

The incorporation of Bi 3+ and Li + as co-dopants in Eu 3+ -doped aluminum oxide films deposited by the ultrasonic spray pyrolysis technique and its effect on the luminescence characteristics of this material are described. Both Bi 3+ and Li + do not introduce new luminescence features but affect the luminescence intensity of the Eu 3+ related emission spectra as well as the excitation spectra. The introduction of Bi 3+ generates localized states in the aluminum oxide host that result in a quenching of the luminescence intensity, while Li + and Bi 3+ co-doping increase the luminescence intensity of these films. - Highlights: • Li and Bi co-doping increase the luminescence. • Bi creates localized states in the Al 2 O 3 host. • Li was incorporated as a co-activator

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Science.gov (United States)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals.

Science.gov (United States)

Buckeridge, J; Catlow, C R A; Scanlon, D O; Keal, T W; Sherwood, P; Miskufova, M; Walsh, A; Woodley, S M; Sokol, A A

2015-01-09

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p-type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals

Science.gov (United States)

Buckeridge, J.; Catlow, C. R. A.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Miskufova, M.; Walsh, A.; Woodley, S. M.; Sokol, A. A.

2015-01-01

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p -type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

Characterizations of arsenic-doped zinc oxide films produced by atmospheric metal-organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Weng, Li-Wei, E-mail: onlyway54@hotmail.com [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Uen, Wu-Yih, E-mail: uenwuyih@ms37.hinet.net [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Lan, Shan-Ming; Liao, Sen-Mao [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Tsun-Neng; Wu, Chih-Hung; Hong, Hwe-Fen; Ma, Wei-Yang [Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan (China); Shen, Chin-Chang [Chemical Engineering Division, Institute of Nuclear Energy Research, Longtan Township, Taoyuan 32546, Taiwan (China)

2013-07-15

p-type ZnO films were prepared by atmospheric metal-organic chemical vapor deposition technique using arsine (AsH{sub 3}) as the doping source. The electrical and optical properties of arsenic-doped ZnO (ZnO:As) films fabricated at 450–600 °C with various AsH{sub 3} flow rates ranging from 8 to 21.34 μmol/min were analyzed and compared. Hall measurements indicate that stable p-type ZnO films with hole concentrations varying from 7.2 × 10{sup 15} to 5.8 × 10{sup 18} cm{sup −3} could be obtained. Besides, low temperature (17 K) photoluminescence spectra of all ZnO:As films also demonstrate the dominance of the line related to the neutral acceptor-bound exciton. Moreover, the elemental identity and chemical bonding information for ZnO:As films were examined by X-ray photoelectron spectroscopy. Based on the results obtained, the effects of doping conditions on the mechanism responsible for the p-type conduction were studied. Conclusively, a simple technique to fabricate good-quality p-type ZnO films has been recognized in this work. Depositing the film at 550 °C with an AsH{sub 3} flow rate of 13.72 μmol/min is appropriate for producing hole concentrations on the order of 10{sup 17} cm{sup −3} for it. Ultimately, by increasing the AsH{sub 3} flow rate to 21.34 μmol/min for doping and depositing the film at 600 °C, ZnO:As films with a hole concentration over 5 × 10{sup 18} cm{sup −3} together with a mobility of 1.93 cm{sup 2}V{sup −1} s{sup −1} and a resistivity of 0.494 ohm-cm can be achieved.

Remarkable Enhancement of the Hole Mobility in Several Organic Small‐Molecules, Polymers, and Small‐Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p‐Dopant B(C6F5)3

Science.gov (United States)

Panidi, Julianna; Paterson, Alexandra F.; Khim, Dongyoon; Fei, Zhuping; Han, Yang; Tsetseris, Leonidas; Vourlias, George; Patsalas, Panos A.; Heeney, Martin

2017-01-01

Abstract Improving the charge carrier mobility of solution‐processable organic semiconductors is critical for the development of advanced organic thin‐film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small‐molecules, polymers, and small‐molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C6F5)3 in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C6F5)3 is shown to have a remarkable impact are the blends of 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF‐TESADT:PTAA) and 2,7‐dioctyl[1]‐benzothieno[3,2‐b][1]benzothiophene:poly(indacenodithiophene‐co‐benzothiadiazole) (C8‐BTBT:C16‐IDTBT), for which hole mobilities of 8 and 11 cm2 V−1 s−1, respectively, are obtained. Doping of the 6,13‐bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C6F5)3 is also shown to increase the maximum hole mobility to 3.7 cm2 V−1 s−1. Analysis of the single and multicomponent materials reveals that B(C6F5)3 plays a dual role, first acting as an efficient p‐dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p‐doping and dopant‐induced long‐range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics. PMID:29375962

Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

Energy Technology Data Exchange (ETDEWEB)

Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

2015-07-15

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

Material Exchange Property of Organo Lead Halide Perovskite with Hole-Transporting Materials

Directory of Open Access Journals (Sweden)

Seigo Ito

2015-10-01

Full Text Available Using X-ray diffraction (XRD, it was confirmed that the deposition of hole-transporting materials (HTM on a CH3NH3PbI3 perovskite layer changed the CH3NH3PbI3 perovskite crystal, which was due to the material exchanging phenomena between the CH3NH3PbI3 perovskite and HTM layers. The solvent for HTM also changed the perovskite crystal. In order to suppress the crystal change, doping by chloride ion, bromide ion and 5-aminovaleric acid was attempted. However, the doping was unable to stabilize the perovskite crystal against HTM deposition. It can be concluded that the CH3NH3PbI3 perovskite crystal is too soft and flexible to stabilize against HTM deposition.

Er3+-Al2O3 nanoparticles doping of borosilicate glass

International Nuclear Information System (INIS)

Massera, Jonathan; Petit, Laeticia; Hupa, Leena; Hupa, Mikko; Koponen, Joona; Glorieux, Benoit

2015-01-01

Novel borosilicate glasses were developed by adding in the glass batch Er 3+ -Al 2 O 3 nanoparticles synthetized by using a soft chemical method. A similar nanoparticle doping with modified chemical vapour deposition (MCVD) process was developed to increase the efficiency of the amplifying silica fibre in comparison to using MCVD and solution doping. It was shown that with the melt quench technique, a Er 3+ -Al 2 O 3 nanoparticle doping neither leads to an increase in the Er 3+ luminescence properties nor allows one to control the rare-earth chemical environment in a borosilicate glass. The site of Er 3+ in the Er 3+ -Al 2 O 3 nanoparticle containing glass seems to be similar as in glasses with the same composition prepared using standard raw materials. We suspect the Er 3+ ions to diffuse from the nanoparticles into the glass matrix. There was no clear evidence of the presence of Al 2 O 3 nanoparticles in the glasses after melting. (author)

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT).

Science.gov (United States)

Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen

2016-11-22

The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La 3+ donor-doped, Fe 3+ acceptor-doped and La 3+ /Fe 3+ -co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT

Directory of Open Access Journals (Sweden)

Christoph Slouka

2016-11-01

Full Text Available The different properties of acceptor-doped (hard and donor-doped (soft lead zirconate titanate (PZT ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La3+ donor-doped, Fe3+ acceptor-doped and La3+/Fe3+-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

Effect of thallium impurity on hole scattering in lead telluride

International Nuclear Information System (INIS)

Kajdanov, V.I.; Nemov, S.A.

1981-01-01

Hole mobility in PbTe monocrystalline specimens in the temperature range from 4.2 to 300 K has been investigated. Detected is a sharp increase in scattering cross section of light and heavy holes in the specimens having the Hall hole concentration p approximately (5+-9)x10 19 cm -3 explained by resonant scattering into a band of quasilocal states of thallium located lower than the ceiling of heavy carrier zone by 0.01+-0.01 eV. Very large differences in resonant scattering of current carriers into the quasilocal states of In and Tl in PbTe result from the inertial polarizability of a crystal. The same mechanism is used to explain long-lived relaxation of zone electron concentration in lead telluride and Pbsub(1-x)Snsub(x)Te doped with indium [ru

Comparative study of Tm-doped and Tm-Sc co-doped Lu3Al5O12 scintillator

International Nuclear Information System (INIS)

Sugiyama, Makoto; Yanagida, Takayuki; Fujimoto, Yutaka

2014-01-01

The crystals of Tm doped and Tm-Sc co-doped Lu 3 Al 5 O 12 (LuAG) grown by the floating zone (FZ) method were examined for their optical and scintillation properties. In transmittance spectra, strong absorption lines due to Tm 3+ 4f–4f transitions were observed. X-ray excited radioluminescence spectra were measured and broad and sharp emission peaks were detected. The former one was attributed to Sc 3+ and the latter one was due to Tm 3+ 4f–4f transitions. Scintillation yield enhancement due to Sc co-doping was observed by means of 137 Cs pulse height spectra. Scintillation decay times were several tens of μs under pulse X-ray excitation. - Highlights: • LuAG:Tm and LuAG:Tm, Sc single crystals have been grown by the FZ method. • Tm 3+ 4f–4f absorption has been observed in transmittance spectra. • Scintillation yield of Tm-doped LuAG has been enhanced by Sc co-doping

Effects of an in vacancy on local distortion of fast phase transition in Bi-doped In3SbTe2

Science.gov (United States)

Choi, Minho; Choi, Heechae; Kim, Seungchul; Ahn, Jinho; Kim, Yong Tae

2017-12-01

Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy ( V 3- In) and higher concentration of the V 3- In in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V 3- In and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages.

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

2016-02-01

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

Growth and properties of oxygen- and ion-doped Bi2Sr2CaCu2O8+δ single crystals

International Nuclear Information System (INIS)

Mitzi, D.B.; Lombardo, L.W.; Kapitulnik, A.; Laderman, S.S.; Jacowitz, R.D.

1990-01-01

A directional solidification method for growing large single crystals in the Bi 2 Sr 2 CaCu 2 O 8+δ system is reported. Ion doping, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Doped and undoped crystals have been characterized using microprobe analysis, x-ray diffraction, thermogravimetric analysis, and magnetic and Hall measurements. Ion doping results in little change of the superconducting transition for substitution levels below 20--25%, while beyond this level the Meissner signal broadens and the low-temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals provide evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90 (as made) to 77 K (oxygen pressure annealed), while the carrier concentrations, as determined from Hall effect measurements, increase from n=3.1(3)x10 21 cm -3 (0.34 holes per Cu site) to 4.6(3)x10 21 cm -3 (0.50 holes per Cu site)

Mg doping of GaN by molecular beam epitaxy

International Nuclear Information System (INIS)

Lieten, R R; Buchowicz, G; Dubon, O; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Borghs, G

2011-01-01

We present a systematic study on the influence of growth conditions on the incorporation and activation of Mg in GaN layers grown by plasma-assisted molecular beam epitaxy. We show that high quality p-type GaN layers can be obtained on GaN-on-silicon templates. The Mg incorporation and the electrical properties have been investigated as a function of growth temperature, Ga : N flux ratio and Mg : Ga flux ratio. It was found that the incorporation of Mg and the electrical properties are highly sensitive to the Ga : N flux ratio. The highest hole mobility and lowest resistivity were achieved for slightly Ga-rich conditions. In addition to an optimal Ga : N ratio, an optimum Mg : Ga flux ratio was also observed at around 1%. We observed a clear Mg flux window for p-type doping of GaN : 0.31% 17 cm -3 and a mobility of 15 cm 2 V -1 s -1 . Temperature-dependent Hall effect measurements indicate an acceptor depth in these samples of 100 meV for a hole concentration of 5.5 x 10 17 cm -3 . The corresponding Mg concentration is 5 x 10 19 cm -3 , indicating approximately 1% activation at room temperature. In addition to continuous growth of Mg-doped GaN layers we also investigated different modulated growth procedures. We show that a modulated growth procedure has only limited influence on Mg doping at a growth temperature of 800 deg. or higher. This result is thus in contrast to previously reported GaN : Mg doping at much lower growth temperatures of 500 deg. C.

Luminescent properties of Ln3+ doped tellurite glasses containing AlF3

Science.gov (United States)

Walas, Michalina; Pastwa, Agata; Lewandowski, Tomasz; Synak, Anna; Gryczyński, Ignacy; Sadowski, Wojciech; Kościelska, Barbara

2016-09-01

The low-phonon energy tellurite glasses TeO2-BaO-Bi2O3 and TeO2-BaO-Bi2O3-AlF3 triply doped with Eu3+, Tb3+, Tm3+ ions in two different molar ratios were synthesized using melt-quenching technique. Their structure and luminescence properties were widely investigated by X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC), Fourier Transform Infrared Spectroscopy (FTIR) and Photoluminescence Spectroscopy (PL). The luminescence spectra of Eu3+, Tb3+, Tm3+ co-doped glasses show apart of the bands corresponding to the 4f-4f transitions of lanthanide ions also band corresponding to glass matrix. AlF3 doping increases emission intensity, although to improve overall emission color further studies on molar composition of samples and the molar ratio of the components should be carried out.

Doped graphene electrodes for organic solar cells

International Nuclear Information System (INIS)

Park, Hyesung; Kim, Ki Kang; Bulovic, Vladimir; Kong, Jing; Rowehl, Jill A

2010-01-01

In this work graphene sheets grown by chemical vapor deposition (CVD) with controlled numbers of layers were used as transparent electrodes in organic photovoltaic (OPV) devices. It was found that for devices with pristine graphene electrodes, the power conversion efficiency (PCE) is comparable to their counterparts with indium tin oxide (ITO) electrodes. Nevertheless, the chances for failure in OPVs with pristine graphene electrodes are higher than for those with ITO electrodes, due to the surface wetting challenge between the hole-transporting layer and the graphene electrodes. Various alternative routes were investigated and it was found that AuCl 3 doping on graphene can alter the graphene surface wetting properties such that a uniform coating of the hole-transporting layer can be achieved and device success rate can be increased. Furthermore, the doping both improves the conductivity and shifts the work function of the graphene electrode, resulting in improved overall PCE performance of the OPV devices. This work brings us one step further toward the future use of graphene transparent electrodes as a replacement for ITO.

Electronic Raman response in electron-doped cuprate superconductors

International Nuclear Information System (INIS)

Geng Zhihao; Feng Shiping

2012-01-01

The electronic Raman response in the electron-doped cuprate superconductors is studied based on the t-t'-J model. It is shown that although the domelike shape of the doping dependent peak energy in the B 2g symmetry is a common feature for both electron-doped and hole-doped cuprate superconductors, there are pronounced deviations from a cubic response in the B 2g channel and a linear response in the B 2g channel for the electron-doped case in the low energy limit. It is also shown that these pronounced deviations are mainly caused by a nonmonotonic d-wave gap in the electron-doped cuprate superconductors.

Solvothermal syntheses of Bi and Zn co-doped TiO_2 with enhanced electron-hole separation and efficient photodegradation of gaseous toluene under visible-light

International Nuclear Information System (INIS)

Li, Juan-Juan; Cai, Song-Cai; Xu, Zhen; Chen, Xi; Chen, Jin; Jia, Hong-Peng; Chen, Jing

2017-01-01

Highlights: • Bi-Zn co-doped TiO_2 catalysts were prepared by solvothermal route. • The incorporation of Bi doping into the TiO_2 generates intermediate energy levels. • Bi and Zn doping showed the enhanced absorption in visible-light region. • Zn dopant acts as a mediator of interfacial charge transfer. • TiBi_1_._9_%Zn_1_%O_2 exhibited high photocatalytic degradation for toluene. - Abstract: This study investigated the effects of Bi doped and Bi-Zn co-doped TiO_2 on photodegradation of gaseous toluene. The doped TiO_2 with various concentration of metal was prepared using the solvothermal route and characterized by SEM, XRD, Raman, BET, DRS, XPS, PL and EPR. Their photocatalytic activities under visible-light irradiation were drastically influenced by the dopant content. The results showed that moderate metal doping levels were obviously beneficial for the toluene degradation, while high doping levels suppressed the photocatalytic activity. The photocatalytic degradation of toluene over TiBi_1_._9_%O_2 and TiBi_1_._9_%Zn_1_%O_2 can reach to 51% and 93%, respectively, which are much higher than 25% of TiO_2. Bi doping into TiO_2 lattice generates new intermediate energy level of Bi below the CB edge of TiO_2. The electron excitation from the VB to Bi orbitals results in the decreased band gap, extended absorption of visible-light and thus enhances its photocatalytic efficiency. Zn doping not only further enhances the absorption in this visible-light region, but also Zn dopant exists as the form of ZnO crystallites located on the interfaces of TiO_2 agglomerates and acts as a mediator of interfacial charge transfer to suppress the electron-hole recombination. These synergistic effects are responsible for the enhanced photocatalytic performance.

An investigation on photoluminescence and energy transfer of Eu{sup 3+}/Sm{sup 3+} single-doped and co-doped Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors

Energy Technology Data Exchange (ETDEWEB)

Bandi, Vengala Rao; Grandhe, Bhaskar Kumar [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Jang, Kiwan, E-mail: kwjang@changwon.ac.kr [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon (Korea, Republic of); Yi, Soung-Soo [Department of Photonics, Silla University, Busan (Korea, Republic of); Jeong, Jung-Hyun [Department of Physics, Pukyong National University, Busan (Korea, Republic of)

2013-07-15

The present investigation aims to demonstrate the potentiality of Eu{sup 3+}/Sm{sup 3+} single-doped and co-doped Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors, which were prepared by a sol–gel method. The X-ray diffraction (XRD) profiles showed that all the observed peaks could be attributed to the monoclinic phase of Ca{sub 4}YO(BO{sub 3}){sub 3}. From the measured emission profiles, we have noticed that both the single-doped Eu{sup 3+}/Sm{sup 3+} phosphors shows four emission transitions of {sup 5}D{sub 0} → {sup 7}F{sub 0,1,2,3} and {sup 4}G{sub 5/2} → {sup 6}H{sub 5/2,7/2,9/2,11/2} respectively. Among them, the {sup 5}D{sub 0} → {sup 7}F{sub 2} of Eu{sup 3+} and {sup 4}G{sub 5/2} → {sup 6}H{sub 7/2} of Sm{sup 3+} are intense emission transitions, leading to an intense red color emission from the prepared phosphors. The excitation spectra showed that Eu{sup 3+}/Sm{sup 3+} doped samples can be excited efficiently by 394 nm and 402 nm respectively, incidentally which matches well with the characteristic emission from UVLED. The co-doping of Sm{sup 3+} ions can broaden and strengthen the absorption of near UV region and to be efficient to sensitize the emission of the Ca{sub 4}YO(BO{sub 3}){sub 3}:Eu{sup 3+} phosphor. The mechanism involved in the energy transfer between Eu{sup 3+} and Sm{sup 3+} has been explained and elucidated by an energy level diagram. - Highlights: • Eu{sup 3+} or/and Sm{sup 3+}:Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors were prepared by sol–gel method. • The co-doping of Sm{sup 3+} to Ca{sub 4}YO(BO{sub 3}){sub 3}:Eu{sup 3+} extends its absorption of NUV region. • It has intense absorption in NUV region, which is suitable for NUV LED. • The energy transfer process between Eu{sup 3+} and Sm{sup 3+} ions were discussed.

Al-bound hole polarons in TiO2

International Nuclear Information System (INIS)

Stashans, Arvids; Bermeo, Sthefano

2009-01-01

Changes in the structural and electronic properties of TiO 2 (anatase and rutile) due to the Al-doping are studied using a quantum-chemical approach based on the Hartree-Fock theory. The formation of hole polarons trapped at oxygen sites near the Al impurity has been discovered and their spatial configuration are discussed. The occurrence of well-localized one-center hole polarons in rutile may influence its photocatalytic activity. Optical absorption energy for this hole center is obtained, 0.4 eV, using the ΔSCF approach.

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

Science.gov (United States)

Chang, Yuan-Ming; Yang, Shih-Hsien; Lin, Che-Yi; Chen, Chang-Hung; Lien, Chen-Hsin; Jian, Wen-Bin; Ueno, Keiji; Suen, Yuen-Wuu; Tsukagoshi, Kazuhito; Lin, Yen-Fu

2018-03-01

Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe 2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe 2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe 2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe 2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe 2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe 2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Remarkable photo-catalytic degradation of malachite green by nickel doped bismuth selenide under visible light irradiation

Science.gov (United States)

Kulsi, Chiranjit; Ghosh, Amrita; Mondal, Anup; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

2017-01-01

Bismuth selenide (Bi2Se3) and nickel (Ni) doped Bi2Se3 were prepared by a solvothermal approach to explore the photo-catalytic performance of the materials in degradation of malachite green (MG). The presence of nickel was confirmed by X-ray photoelectron spectroscopy (XPS) measurement in doped Bi2Se3. The results showed that the nickel doping played an important role in microstructure and photo-catalytic activity of the samples. Nickel doped Bi2Se3 sample exhibited higher photo-catalytic activity than that of the pure Bi2Se3 sample under visible-light irradiation. The photo-catalytic degradation followed first-order reaction kinetics. Fast degradation kinetics and complete (100% in 5 min of visible light irradiation) removal of MG was achieved by nickel doped Bi2Se3 in presence of hydrogen peroxide (H2O2) due to modification of band gap energies leading to suppression of photo-generated electron-hole recombination.

CYG X-3: A GALACTIC DOUBLE BLACK HOLE OR BLACK-HOLE-NEUTRON-STAR PROGENITOR

Energy Technology Data Exchange (ETDEWEB)

Belczynski, Krzysztof; Bulik, Tomasz [Astronomical Observatory, University of Warsaw, Al. Ujazdowskie 4, 00-478 Warsaw (Poland); Mandel, Ilya [School of Physics and Astronomy, University of Birmingham, Edgbaston B15 2TT (United Kingdom); Sathyaprakash, B. S. [School of Physics and Astronomy, Cardiff University, 5, The Parade, Cardiff CF24 3YB (United Kingdom); Zdziarski, Andrzej A.; Mikolajewska, Joanna [Centrum Astronomiczne im. M. Kopernika, Bartycka 18, PL-00-716 Warszawa (Poland)

2013-02-10

There are no known stellar-origin double black hole (BH-BH) or black-hole-neutron-star (BH-NS) systems. We argue that Cyg X-3 is a very likely BH-BH or BH-NS progenitor. This Galactic X-ray binary consists of a compact object, wind-fed by a Wolf-Rayet (W-R) type companion. Based on a comprehensive analysis of observational data, it was recently argued that Cyg X-3 harbors a 2-4.5 M {sub Sun} black hole (BH) and a 7.5-14.2 M {sub Sun} W-R companion. We find that the fate of such a binary leads to the prompt ({approx}< 1 Myr) formation of a close BH-BH system for the high end of the allowed W-R mass (M {sub W-R} {approx}> 13 M {sub Sun }). For the low- to mid-mass range of the W-R star (M {sub W-R} {approx} 7-10 M {sub Sun }) Cyg X-3 is most likely (probability 70%) disrupted when W-R ends up as a supernova. However, with smaller probability, it may form a wide (15%) or a close (15%) BH-NS system. The advanced LIGO/VIRGO detection rate for mergers of BH-BH systems from the Cyg X-3 formation channel is {approx}10 yr{sup -1}, while it drops down to {approx}0.1 yr{sup -1} for BH-NS systems. If Cyg X-3 in fact hosts a low-mass black hole and massive W-R star, it lends additional support for the existence of BH-BH/BH-NS systems.

Thermoelectric properties of doped BaHfO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Dixit, Chandra Kr., E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Dr. Shakuntala Misra National Rehabilitation University, Lucknow-229001, U.P India (India); Bhamu, K. C. [Department of Physics, Goa University, Goa-403 206 (India); Sharma, Ramesh, E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Feroze Gandhi Institute of Engineering & Technology, Raebareli-229001, U.P India (India)

2016-05-06

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO{sub 3} by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO{sub 3} doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO{sub 3} is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO{sub 3} is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

Sol-gel synthesis and structure of La2O3–CoO–SiO2 powders

Directory of Open Access Journals (Sweden)

Lachezar Radev

2008-12-01

Full Text Available LaCoO3 powders are studied because they exhibit interesting electrical, magnetic and catalytic properties. In this paper, new synthesized La2O3-CoO-SiO2 powders with different quantity of silica were prepared via solgel method in aqua media, starting from metal nitrates with different chelating agents. The relation between the reaction in solution, crystallization pathway and morphology were discussed. In LaCoO3-SiO2 powders, depending on the content of SiO2 and the treatment temperature (700–1100°C, different crystalline phases (LaCoO3, Co2SiO4 and La9.31(SiO46O2 were observed with the crystallite sizes ranging from 50 to 100 nm. It was proved that chemical composition and nature of used additives has influence on the phase formation and structure of obtained nanomaterials.

Effect of CoFe magnetic nanoparticles on the hole transport in poly(2-methoxy, 5-(2-ethylhexiloxy) 1,4-phenylenevinylene)

International Nuclear Information System (INIS)

Kumar, Pankaj; Kumar, Hemant; Chand, Suresh; Jain, S C; Kumar, Vikram; Kumar, Vinod; Pant, R P; Tandon, R P

2008-01-01

The effect of doping of CoFe magnetic nanoparticles (MNPs) on the hole transport in poly(2-methoxy,5-(2-ethylhexyloxy)-1,4-phenylenevinylene)(MEH-PPV) thin films has been investigated in the temperature range 280-120 K. Hole transport in MEH-PPV is found to be governed by space-charge-limited-conduction (SCLC) with exponential distribution of traps in energy space. Doping of CoFe MNPs in MEH-PPV reduces the hole mobility from 1 x 10 -5 to 6 x 10 -6 cm 2 V -1 s -1 by introducing new trap sites causing their net density increase from 1 x 10 18 to 2.1 x 10 18 cm -3 , which is likely to result in balanced injection and efficient recombination of charge carriers to improve the performance of polymer light emitting diodes

P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors

Energy Technology Data Exchange (ETDEWEB)

Herrbach, J.; Revaux, A., E-mail: amelie.revaux@cea.fr [University of Grenoble Alpes, CEA-LITEN, Grenoble 38000 (France); Vuillaume, D. [IEMN, CNRS, University of Lille, Villeneuve d' Ascq 59652 (France); Kahn, A. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

2016-08-15

In this work, we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layers in organic photodetectors processed by solution. As Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is known to be sensitive to humidity, oxygen, and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b′)dithiophene)-2, 6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-c) p-doped with the dopant tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF{sub 3}){sub 3}) is used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons into the active layer. We show similar device performance under light and the improvements of detection performance with the doped layer in comparison with PEDOT:PSS, leading to a detectivity of 1.9 × 10{sup 13} cm (Hz){sup 1/2} (W){sup −1}, competitive with silicon diodes used in imaging applications. Moreover, contrary to PEDOT:PSS, no localization of the p-doped layer is needed, leading to a diode active area defined by the patterned electrodes.

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

International Nuclear Information System (INIS)

Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh

2010-01-01

Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10 18 cm -3 . The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm 2 /V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λ peak =529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

Comparative study of scintillation properties of RE doped NaPO3-Al(PO3)3 glasses

International Nuclear Information System (INIS)

Kuro, Tomoaki; Yanagida, Takayuki; Okada, Go; Fujimoto, Yutaka; Masai, Hirokazu

2015-01-01

We systematically investigated photoluminescence (PL), scintillation and dosimeter properties of rare-earth (RE) doped NaPO 3 -Al(PO 3 ) 3 (NAP) glasses. Ag-doped NAP glass is widely used for individual radiation dosimeter, however, there have been few reports on studies about NAP glasses when RE ions are doped as the luminescence center. The NAP glasses doped with 0.3 wt% RE (La∼Yb) were prepared by the conventional melt-quenching method. PL decay time and scintillation decay time profiles showed fast (ns) and slow (μs or ms) components: the fast components were from several tens to 100 ns due to the host emission or 5d-4f transition emission, and the slow component from few μs to few ms was caused by 4f-4f transition emission of RE 3+ . Thermally stimulated luminescence (TSL) was evaluated as a dosimeter property, and glow peaks appeared around 400degC in all the samples. The TSL dose response function was examined in the dose range from 10 mGy to 10 Gy, and good linearity was observed in RE-doped NAP glasses. (author)

Electronic correlations in the hole-doped superconductor RbFe{sub 2}As{sub 2} probed via {sup 75}As NMR

Energy Technology Data Exchange (ETDEWEB)

Molatta, S.; Wosnitza, J. [Hochfeld-Magnetlabor Dresden (HLD), Helmholtz-Zentrum Dresden-Rossendorf (Germany); TU Dresden (Germany); DFG, GRK-1621 (Germany); Zhang, Z.; Dmytriieva, D.; Kuehne, H. [Hochfeld-Magnetlabor Dresden (HLD), Helmholtz-Zentrum Dresden-Rossendorf (Germany); Khim, S.; Grafe, H.J. [IFW Dresden (Germany); Wurmehl, S.; Buechner, B. [TU Dresden (Germany); DFG, GRK-1621 (Germany); IFW Dresden (Germany)

2016-07-01

We will present latest {sup 75}As NMR data in the normal state of the stoichiometric superconductor RbFe{sub 2}As{sub 2}. This will be put into context to known results for the heavily hole-doped compound KFe{sub 2}As{sub 2}. The static and dynamic magnetic correlations were probed via measurements of the Knight shift and nuclear spin-lattice relaxation rate in a wide temperature range from 0.3 to 300 K. Although neither a magnetic nor a structural transition were observed down to lowest temperatures, the very close proximity of the ground state to a magnetic instability is indicated by a pronounced Curie-Weiss-like behavior of spin fluctuations. At around 100 K, we find a maximum of the Knight shift and a changing exponent of the temperature-dependent relaxation rate. This is phenomenologically similar to the case of KFe{sub 2}As{sub 2} and was proposed to stem from a incoherence-coherence crossover mechanism of electronic correlations.

The effect of intentional potassium co-doping on the luminescent properties of Yb3+ and Tm3+ doped α-NaYF4 core and core–shell nanoparticles

International Nuclear Information System (INIS)

Misiak, Małgorzata; Stręk, Wiesław; Arabasz, Sebastian; Bednarkiewicz, Artur

2016-01-01

Simple and effective ways to circumvent limited luminescence efficiency of up-converting nanoparticles (UCNPs) are sought. One of the methods relays on distorting the crystallographic structure of host material by co-doping the nanocrystals with optically inactive co-dopants. Here we study the influence of K + doping and surface passivation on the up-converting properties of the α-NaYF 4 nanocrystals co-doped with 20% Yb 3+ and 0.1 or 2% Tm 3+ . The intentionally chosen concentrations of K + ions, which were meant to replaced sodium ions were fixed to 0, 5, 10, 20 to 30%. Potassium ions modified the spectroscopic properties of both core and core–shell NPs, but the differences were noticed between samples doped with 0.1% Tm 3+ and 2% Tm 3+ ions. Replacement of sodium by potassium ions decreased up-conversion luminescence intensity as well as shortened thulium excited states lifetimes in the samples doped with 0.1% Tm 3+ , while the opposite behavior was found in the samples co-doped with higher 2% thulium concentration. - Highlights: • We studied the influence of K + doping on luminescent properties of α-NaYF 4 :YbTm. • The 0.1 and 2% Tm doped core and core–shell samples were investigated. • K + -doping influence on UC properties was different in low and highly Tm doped NPs. • The explanations of the observed variations were proposed.

Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

Directory of Open Access Journals (Sweden)

Suvarna R. Bathe

2014-01-01

Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

Disappearance of electron-hole asymmetry in nanoparticles of Nd1−xCaxMnO3(x=0.6,0.4): magnetization and electron paramagnetic resonance evidence

International Nuclear Information System (INIS)

Bhagyashree, K. S.; Bhat, S. V.

2015-01-01

We study and compare magnetic and electron paramagnetic resonance behaviors of bulk and nanoparticles of Nd 1−x Ca x MnO 3 in hole doped (x=0.4;NCMOH) and electron doped (x=0.6;NCMOE) samples. NCMOH in bulk form shows a complex temperature dependence of magnetization M(T), with a charge ordering transition at ∼250 K, an antiferromagnetic (AFM) transition at ∼150 K, and a transition to a canted AFM phase/mixed phase at ∼80 K. Bulk NCMOE behaves quite differently with just a charge ordering transition at ∼280 K, thus providing a striking example of the so called electron-hole asymmetry. While our magnetization data on bulk samples are consistent with the earlier reports, the new results on the nanoparticles bring out drastic effects of size reduction. They show that M(T) behaviors of the two nanosamples are essentially similar in addition to the absence of the charge order in them thus providing strong evidence for vanishing of the electron-hole asymmetry in nanomanganites. This conclusion is further corroborated by electron paramagnetic resonance studies which show that the large difference in the “g” values and their temperature dependences found for the two bulk samples disappears as they approach a common behavior in the corresponding nanosamples

Energy transfer and colorimetric properties of Eu3+/Dy3+ co-doped Gd2(MoO4)3 phosphors

International Nuclear Information System (INIS)

Wan Jing; Cheng Lihong; Sun Jiashi; Zhong Haiyang; Li Xiangping; Lu Weili; Tian Yue; Lin Hai; Chen Baojiu

2010-01-01

Dy 3+ single-doped and Eu 3+ /Dy 3+ co-doped gadolinium molybdate (Gd 2 (MoO 4 ) 3 ) phosphors were synthesized by a traditional solid-state reaction method. The XRD was used to confirm the crystal structure of the phosphors. The energy transfer between Eu 3+ and Dy 3+ was observed and studied. The Eu 3+ concentration can hardly affect the blue and yellow emission intensities of Dy 3+ , and the Eu 3+ emission intensity increases with the increase of Eu 3+ concentration. Co-doping with Eu 3+ compensated the red emission component of the Dy 3+ doped Gd 2 (MoO 4 ) 3 phosphor. Introducing proper amount of Eu 3+ can improve the colorimetric performance of the phosphors.

Visible-light-driven photoelectrochemical and photocatalytic performances of Cr-doped SrTiO3/TiO2 heterostructured nanotube arrays.

Science.gov (United States)

Jiao, Zhengbo; Chen, Tao; Xiong, Jinyan; Wang, Teng; Lu, Gongxuan; Ye, Jinhua; Bi, Yingpu

2013-01-01

Well-aligned TiO2 nanotube arrays have become of increasing significance because of their unique highly ordered array structure, high specific surface area, unidirectional charge transfer and transportation features. However, their poor visible light utilization as well as the high recombination rate of photoexcited electron-hole pairs greatly limited their practical applications. Herein, we demonstrate the fabrication of visible-light-responsive heterostructured Cr-doped SrTiO3/TiO2 nanotube arrays by a simple hydrothermal method, which facilitate efficient charge separation and thus improve the photoelectrochemical as well as photocatalytic performances.

Analysis of Irradiation Holes of In-Core Region

Energy Technology Data Exchange (ETDEWEB)

In, Won-ho; Lee, Yong-sub; Kim, Tae-hwan; Lim, Kyoung-hwan; Ahn, Hyung-jin [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-05-15

Test fuels and materials are irradiated in the in-core region in side of the chimney. The inner chimney is composed of In-Core and Out-Core regions. The In-Core region has 23 hexagonal vertical irradiation holes named from R01 to R20, CT, IR1 and IR2 and 8 cylindrical irradiation holes named from CAR1 to CAR4 and SOR1 to SOR4. The Out-Core region is composed of 8 cylindrical irradiation holes named from OR1 to OR8 which are installed near the inner shell of the reflector tank. HANARO is the multi-purpose research reactor which utilizes in-core irradiation holes, which is being used in various field. Over the past 7 years we have used CT 8 times, IR once, IR2 and OR3 twice, OR4 three times and OR5 ten times. These irradiation holes are used to perform an evaluation of the neutron irradiation properties and the tests were all completed and done successfully. HANARO has been used successfully, and it still will be used continuously in various fields such as nuclear in-pile tests, the production of radioisotopes, neutron transmutation doping, neutron activation analysis, neutron beam research, radiography, environmental science.

Electrical and optical properties of Si-doped Ga2O3

Science.gov (United States)

Li, Yin; Yang, Chuanghua; Wu, Liyuan; Zhang, Ru

2017-05-01

The charge densities, band structure, density of states, dielectric functions of Si-doped β-Ga2O3 have been investigated based on the density functional theory (DFT) within the hybrid functional HSE06. The heavy doping makes conduction band split out more bands and further influences the band structure. It decreases the band gap and changes from a direct gap to an indirect gap. After doping, the top of the valence bands is mainly composed by the O-2p states, Si-3p states and Ga-4p states and the bottom of the conduction bands is almost formed by the Si-3s, Si-3p and Ga-4s orbits. The anisotropic optical properties have been investigated by means of the complex dielectric function. After the heavy Si doping, the position of absorption band edges did not change much. The slope of the absorption curve descends and indicates that the absorption became more slow for Si-doped β-Ga2O3 than undoped one due to the indirect gap of Si-doped β-Ga2O3.

Al-bound hole polarons in TiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Stashans, Arvids, E-mail: arvids@utpl.edu.ec [Grupo de Fisicoquimica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Bermeo, Sthefano [Grupo de Fisicoquimica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)] [Escuela de Electronica y Telecomunicaciones, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)

2009-09-18

Changes in the structural and electronic properties of TiO{sub 2} (anatase and rutile) due to the Al-doping are studied using a quantum-chemical approach based on the Hartree-Fock theory. The formation of hole polarons trapped at oxygen sites near the Al impurity has been discovered and their spatial configuration are discussed. The occurrence of well-localized one-center hole polarons in rutile may influence its photocatalytic activity. Optical absorption energy for this hole center is obtained, 0.4 eV, using the {Delta}SCF approach.

Structural and chemical reactivity modifications of a cobalt perovskite induced by Sr-substitution. An in situ XAS study

International Nuclear Information System (INIS)

Hueso, Jose L.; Holgado, Juan P.; Pereñíguez, Rosa; Gonzalez-DelaCruz, V.M.; Caballero, Alfonso

2015-01-01

LaCoO 3 and La 0.5 Sr 0.5 CoO 3−δ perovskites have been studied by in situ Co K-edge XAS. Although the partial substitution of La(III) by Sr(II) species induces an important increase in the catalytic oxidation activity and modifies the electronic state of the perovskite, no changes could be detected in the oxidation state of cobalt atoms. So, maintaining the electroneutrality of the perovskite requires the generation of oxygen vacancies in the network. The presence of these vacancies explains that the substituted perovskite is now much more reducible than the original LaCoO 3 perovskite. As detected by in situ XAS, after a consecutive reduction and oxidation treatment, the original crystalline structure of the LaCoO 3 perovskite is maintained, although in a more disordered state, which is not the case for the Sr doped perovskite. So, the La 0.5 Sr 0.5 CoO 3−δ perovskite submitted to the same hydrogen reduction treatment produces metallic cobalt, while as determined by in situ XAS spectroscopy the subsequent oxidation treatment yields a Co(III) oxide phase with spinel structure. Surprisingly, no Co(II) species are detected in this new spinel phase. - Highlights: • A Sr-substituted lanthanum cobalt perovskite has been prepared by spray pyrolysis. • It has been established that Co(III) cations are present in both perovskites. • LaCoO 3 is a less reducible phase than the substituted La 0.5 Sr 0.5 CoO 3−δ . • After reoxidation of reduced La 0.5 Sr 0.5 CoO 3−δ , a 100% Co(III) spinel is obtained

Emergence of high-mobility minority holes in the electrical transport of the Ba (Fe1 -xMnxAs )2 iron pnictides

Science.gov (United States)

Urata, T.; Tanabe, Y.; Huynh, K. K.; Heguri, S.; Oguro, H.; Watanabe, K.; Tanigaki, K.

2015-05-01

In Fe pnictide (Pn) superconducting materials, neither Mn nor Cr doping to the Fe site induces superconductivity, even though hole carriers are generated. This is in strong contrast with the superconductivity appearing when holes are introduced by alkali-metal substitution on the insulating blocking layers. We investigate in detail the effects of Mn doping on magnetotransport properties in Ba (Fe1 -xMnxAs )2 for elucidating the intrinsic reason. The negative Hall coefficient for x =0 estimated in the low magnetic field (B ) regime gradually increases as x increases, and its sign changes to a positive one at x =0.020 . Hall resistivities as well as simultaneous interpretation using the magnetoconductivity tensor including both longitudinal and transverse transport components clarify that minority holes with high mobility are generated by the Mn doping via spin-density wave transition at low temperatures, while original majority electrons and holes residing in the paraboliclike Fermi surfaces of the semimetallic Ba (FeAs )2 are negligibly affected. Present results indicate that the mechanism of hole doping in Ba (Fe1 -xMnxAs )2 is greatly different from that of the other superconducting FePn family.

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

Science.gov (United States)

Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.

2017-06-01

Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

Science.gov (United States)

Liang, Y. H.; Towe, E.

2018-03-01

Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

Magnetic and electronic properties of La3 M O7 and possible polaron formation in hole-doped La3 M O7 (M   =  Ru and Os)

International Nuclear Information System (INIS)

Gao, Bin; Weng, Yakui; Zhang, Jun-Jie; Zhang, Huimin; Zhang, Yang; Dong, Shuai

2017-01-01

Oxides with 4 d /5 d transition metal ions are physically interesting for their particular crystalline structures as well as the spin–orbit coupled electronic structures. Recent experiments revealed a series of 4 d /5 d transition metal oxides R 3 M O 7 (R : rare earth; M : 4 d /5 d transition metal) with unique quasi-one-dimensional M chains. Here first-principles calculations have been performed to study the electronic structures of La 3 OsO 7 and La 3 RuO 7 . Our study confirm both of them to be Mott insulating antiferromagnets with identical magnetic order. The reduced magnetic moments, which are much smaller than the expected value for ideal high-spin state (3 t 2g orbitals occupied), are attributed to the strong p   −   d hybridization with oxygen ions, instead of the spin–orbit coupling. The Ca-doping to La 3 OsO 7 and La 3 RuO 7 can not only modulate the nominal carrier density but also affect the orbital order as well as the local distortions. The Coulombic attraction and particular orbital order would prefer to form polarons, which might explain the puzzling insulating behavior of doped 5 d transition metal oxides. In addition, our calculations predict that the Ca-doping can trigger ferromagnetism in La 3 RuO 7 but not in La 3 OsO 7 . (paper)

Low-temperature thermoelectric properties of Pb doped Cu2SnSe3

Science.gov (United States)

Prasad K, Shyam; Rao, Ashok; Gahtori, Bhasker; Bathula, Sivaiah; Dhar, Ajay; Chang, Chia-Chi; Kuo, Yung-Kang

2017-09-01

A series of Cu2Sn1-xPbxSe3 (0 ≤ x ≤ 0.04) compounds was prepared by solid state synthesis technique. The electrical resistivity (ρ) decreased with increase in Pb content up to x = 0.01, thereafter it increased with further increase in x (till x = 0.03). However, the lowest value of electrical resistivity is observed for Cu2Sn0.96Pb0.04Se3. Analysis of electrical resistivity of all the samples suggests that small poloron hoping model is operative in the high temperature regime while variable range hopping is effective in the low temperature regime. The positive Seebeck coefficient (S) for pristine and doped samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) of the Cu2Sn1-xPbxSe3 compounds was estimated by the Wiedemann-Franz law and found that the contribution from κe is less than 1% of the total thermal conductivity (κ). The highest ZT 0.013 was achieved at 400 K for the sample Cu2Sn0.98Pb0.02Se3, about 30% enhancement as compared to the pristine sample.

Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact.

Science.gov (United States)

Noda, Kei; Wada, Yasuo; Toyabe, Toru

2015-10-28

Effects of contact-area-limited doping for pentacene thin-film transistors with a bottom-gate, top-contact configuration were investigated. The increase in the drain current and the effective field-effect mobility was achieved by preparing hole-doped layers underneath the gold contact electrodes by coevaporation of pentacene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), confirmed by using a thin-film organic transistor advanced simulator (TOTAS) incorporating Schottky contact with a thermionic field emission (TFE) model. Although the simulated electrical characteristics fit the experimental results well only in the linear regime of the transistor operation, the barrier height for hole injection and the gate-voltage-dependent hole mobility in the pentacene transistors were evaluated with the aid of the device simulation. This experimental data analysis with the simulation indicates that the highly-doped semiconducting layers prepared in the contact regions can enhance the charge carrier injection into the active semiconductor layer and concurrent trap filling in the transistor channel, caused by the mitigation of a Schottky energy barrier. This study suggests that both the contact-area-limited doping and the device simulation dealing with Schottky contact are indispensable in designing and developing high-performance organic thin-film transistors.

Nearest-neighbor Kitaev exchange blocked by charge order in electron-doped α -RuCl3

Science.gov (United States)

Koitzsch, A.; Habenicht, C.; Müller, E.; Knupfer, M.; Büchner, B.; Kretschmer, S.; Richter, M.; van den Brink, J.; Börrnert, F.; Nowak, D.; Isaeva, A.; Doert, Th.

2017-10-01

A quantum spin liquid might be realized in α -RuCl3 , a honeycomb-lattice magnetic material with substantial spin-orbit coupling. Moreover, α -RuCl3 is a Mott insulator, which implies the possibility that novel exotic phases occur upon doping. Here, we study the electronic structure of this material when intercalated with potassium by photoemission spectroscopy, electron energy loss spectroscopy, and density functional theory calculations. We obtain a stable stoichiometry at K0.5RuCl3 . This gives rise to a peculiar charge disproportionation into formally Ru2 + (4 d6 ) and Ru3 + (4 d5 ). Every Ru 4 d5 site with one hole in the t2 g shell is surrounded by nearest neighbors of 4 d6 character, where the t2 g level is full and magnetically inert. Thus, each type of Ru site forms a triangular lattice, and nearest-neighbor interactions of the original honeycomb are blocked.

PdO Doping Tunes Band-Gap Energy Levels as Well as Oxidative Stress Responses to a Co3O4p-Type Semiconductor in Cells and the Lung

Science.gov (United States)

2014-01-01

We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0–8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the Ec levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from −4.12 to −4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of Ev, Ec, and Ef levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4. PMID:24673286

Manipulation and control of the interfacial polarization in organic light-emitting diodes by dipolar doping

Directory of Open Access Journals (Sweden)

Lars Jäger

2016-09-01

Full Text Available Most of the commonly used electron transporting materials in organic light-emitting diodes exhibit interfacial polarization resulting from partially aligned permanent dipole moments of the molecules. This property modifies the internal electric field distribution of the device and therefore enables an earlier flat band condition for the hole transporting side, leading to improved charge carrier injection. Recently, this phenomenon was studied with regard to different materials and degradation effects, however, so far the influence of dilution has not been investigated. In this paper we focus on dipolar doping of the hole transporting material 4,4-bis[N-(1-naphthyl-N-phenylamino]-biphenyl (NPB with the polar electron transporting material tris-(8-hydroxyquinolate aluminum (Alq3. Impedance spectroscopy reveals that changes of the hole injection voltage do not scale in a simple linear fashion with the effective thickness of the doped layer. In fact, the measured interfacial polarization reaches a maximum value for a 1:1 blend. Taking the permanent dipole moment of Alq3 into account, an increasing degree of dipole alignment is found for decreasing Alq3 concentration. This observation can be explained by the competition between dipole-dipole interactions leading to dimerization and the driving force for vertical orientation of Alq3 dipoles at the surface of the NPB layer.

Manipulation and control of the interfacial polarization in organic light-emitting diodes by dipolar doping

Science.gov (United States)

Jäger, Lars; Schmidt, Tobias D.; Brütting, Wolfgang

2016-09-01

Most of the commonly used electron transporting materials in organic light-emitting diodes exhibit interfacial polarization resulting from partially aligned permanent dipole moments of the molecules. This property modifies the internal electric field distribution of the device and therefore enables an earlier flat band condition for the hole transporting side, leading to improved charge carrier injection. Recently, this phenomenon was studied with regard to different materials and degradation effects, however, so far the influence of dilution has not been investigated. In this paper we focus on dipolar doping of the hole transporting material 4,4-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl (NPB) with the polar electron transporting material tris-(8-hydroxyquinolate) aluminum (Alq3). Impedance spectroscopy reveals that changes of the hole injection voltage do not scale in a simple linear fashion with the effective thickness of the doped layer. In fact, the measured interfacial polarization reaches a maximum value for a 1:1 blend. Taking the permanent dipole moment of Alq3 into account, an increasing degree of dipole alignment is found for decreasing Alq3 concentration. This observation can be explained by the competition between dipole-dipole interactions leading to dimerization and the driving force for vertical orientation of Alq3 dipoles at the surface of the NPB layer.

Charge Saturation and Intrinsic Doping in Electrolyte-Gated Organic Semiconductors.

Science.gov (United States)

Atallah, Timothy L; Gustafsson, Martin V; Schmidt, Elliot; Frisbie, C Daniel; Zhu, X-Y

2015-12-03

Electrolyte gating enables low voltage operation of organic thin film transistors, but little is known about the nature of the electrolyte/organic interface. Here we apply charge-modulation Fourier transform infrared spectroscopy, in conjunction with electrical measurements, on a model electrolyte gated organic semiconductor interface: single crystal rubrene/ion-gel. We provide spectroscopic signature for free-hole like carriers in the organic semiconductor and unambiguously show the presence of a high density of intrinsic doping of the free holes upon formation of the rubrene/ion-gel interface, without gate bias (Vg = 0 V). We explain this intrinsic doping as resulting from a thermodynamic driving force for the stabilization of free holes in the organic semiconductor by anions in the ion-gel. Spectroscopy also reveals the saturation of free-hole like carrier density at the rubrene/ion-gel interface at Vg < -0.5 V, which is commensurate with the negative transconductance seen in transistor measurements.

Effect of carrier doping and external electric field on the optical properties of graphene quantum dots

Science.gov (United States)

Basak, Tista; Basak, Tushima

2018-02-01

In this paper, we demonstrate that the optical properties of finite-sized graphene quantum dots can be effectively controlled by doping it with different types of charge carriers (electron/hole). In addition, the role played by a suitably directed external electric field on the optical absorption of charge-doped graphene quantum dots have also been elucidated. The computations have been performed on diamond-shaped graphene quantum dot (DQD) within the framework of the Pariser-Parr-Pople (PPP) model Hamiltonian, which takes into account long-range Coulomb interactions. Our results reveal that the energy band-gap increases when the DQD is doped with holes while it decreases on doping it with electrons. Further, the optical absorption spectra of DQD exhibits red/blue-shift on doping with electrons/holes. Our computations also indicate that the application of external transverse electric field results in a substantial blue-shift of the optical spectrum for charge-doped DQD. However, it is observed that the influence of charge-doping is more prominent in tuning the optical properties of finite-sized graphene quantum dots as compared to externally applied electric field. Thus, tailoring the optical properties of finite-sized graphene quantum dots by manipulative doping with charge carriers and suitably aligned external electric field can greatly enhance its potential application in designing nano-photonic devices.

Understanding and control of bipolar self-doping in copper nitride

Science.gov (United States)

Fioretti, Angela N.; Schwartz, Craig P.; Vinson, John; Nordlund, Dennis; Prendergast, David; Tamboli, Adele C.; Caskey, Christopher M.; Tuomisto, Filip; Linez, Florence; Christensen, Steven T.; Toberer, Eric S.; Lany, Stephan; Zakutayev, Andriy

2016-05-01

Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu3N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu3N with 1017 electrons/cm3 for low growth temperature (≈35 °C) and p-type with 1015 holes/cm3-1016 holes/cm3 for elevated growth temperatures (50 °C-120 °C). Mobility for both types of Cu3N was ≈0.1 cm2/Vs-1 cm2/Vs. Additionally, temperature-dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that VCu defects form preferentially in p-type Cu3N, while Cui defects form preferentially in n-type Cu3N, suggesting that Cu3N is a compensated semiconductor with conductivity type resulting from a balance between donor and acceptor defects. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu3N that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials and provide a framework that can be applied when considering the properties of such materials in general.

Spin properties of charged Mn-doped quantum dota)

Science.gov (United States)

Besombes, L.; Léger, Y.; Maingault, L.; Mariette, H.

2007-04-01

The optical properties of individual quantum dots doped with a single Mn atom and charged with a single carrier are analyzed. The emission of the neutral, negatively and positively charged excitons coupled with a single magnetic atom (Mn) are observed in the same individual quantum dot. The spectrum of the charged excitons in interaction with the Mn atom shows a rich pattern attributed to a strong anisotropy of the hole-Mn exchange interaction slightly perturbed by a small valence-band mixing. The anisotropy in the exchange interaction between a single magnetic atom and a single hole is revealed by comparing the emission of a charged Mn-doped quantum dot in longitudinal and transverse magnetic field.

About the phase space of SL(3) black holes

Energy Technology Data Exchange (ETDEWEB)

Cabo-Bizet, Alejandro [SISSA and INFN, Via Bonomea 265, 34128 Trieste (Italy); Giraldo-Rivera, V.I. [SISSA and INFN, Via Bonomea 265, 34128 Trieste (Italy); ICTP, Strada Costiera 11, 34014 Trieste (Italy)

2015-03-17

In this note we address some issues of recent interest, related to the asymptotic symmetry algebra of higher spin black holes in sl(3,ℝ)×sl(3,ℝ) Chern Simons (CS) formulation. We compute the fixed time Dirac bracket algebra that acts on two different phase spaces. Both of these spaces contain black holes as zero modes. The result for one of these phase spaces is explicitly shown to be isomorphic to W{sub 3}{sup (2)}×W{sub 3}{sup (2)} in first order perturbations.

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

Energy Technology Data Exchange (ETDEWEB)

Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü., E-mail: uozgur@vcu.edu; Morkoç, H. [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

2015-05-04

The effect of δ-doping of In{sub 0.06}Ga{sub 0.94}N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In{sub 0.15}Ga{sub 0.85}N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ∼80 A/cm{sup 2} in the reference LED to ∼120 A/cm{sup 2} in the LEDs with Mg δ-doped barriers.

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

International Nuclear Information System (INIS)

Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-01-01

The effect of δ-doping of In 0.06 Ga 0.94 N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In 0.15 Ga 0.85 N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ∼80 A/cm 2 in the reference LED to ∼120 A/cm 2 in the LEDs with Mg δ-doped barriers

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

Science.gov (United States)

Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-05-01

The effect of δ-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ˜80 A/cm2 in the reference LED to ˜120 A/cm2 in the LEDs with Mg δ-doped barriers.

BLACK HOLE MASS ESTIMATES AND RAPID GROWTH OF SUPERMASSIVE BLACK HOLES IN LUMINOUS z ∼ 3.5 QUASARS

Energy Technology Data Exchange (ETDEWEB)

Zuo, Wenwen; Wu, Xue-Bing [Department of Astronomy, School of Physics, Peking University, Beijing 100871 (China); Fan, Xiaohui; Green, Richard [Steward Observatory, The University of Arizona, Tucson, AZ 85721 (United States); Wang, Ran [Kavli Institute for Astronomy and Astrophysics, Peking University, Beijing 100871 (China); Bian, Fuyan [Research School of Astronomy and Astrophysics, Mount Stromlo Observatory, Cotter Road, Weston ACT 2611 (Australia)

2015-02-01

We present new near-infrared (IR) observations of the Hβ λ4861 and Mg II λ2798 lines for 32 luminous quasars with 3.2 < z < 3.9 using the Palomar Hale 200 inch telescope and the Large Binocular Telescope. We find that the Mg II FWHM is well correlated with the Hβ FWHM, confirming itself as a good substitute for the Hβ FWHM in the black hole mass estimates. The continuum luminosity at 5100 Å well correlates with the continuum luminosity at 3000 Å and the broad emission line luminosities (Hβ and Mg II). With simultaneous near-IR spectroscopy of the Hβ and Mg II lines to exclude the influences of flux variability, we are able to evaluate the reliability of estimating black hole masses based on the Mg II line for high redshift quasars. With the reliable Hβ line based black hole mass and Eddington ratio estimates, we find that the z ∼ 3.5 quasars in our sample have black hole masses 1.90 × 10{sup 9} M {sub ☉} ≲ M {sub BH} ≲ 1.37 × 10{sup 10} M {sub ☉}, with a median of ∼5.14 × 10{sup 9} M {sub ☉} and are accreting at Eddington ratios between 0.30 and 3.05, with a median of ∼1.12. Assuming a duty cycle of 1 and a seed black hole mass of 10{sup 4} M {sub ☉}, we show that the z ∼ 3.5 quasars in this sample can grow to their estimated black hole masses within the age of the universe at their redshifts.

Upconversion improvement in KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} nanoparticles by doping Al{sup 3+} ions

Energy Technology Data Exchange (ETDEWEB)

Zhou, Haifang [Fuzhou University, School of Physics and Information Engineering, and Institute of Micro-Nano Devices and Solar Cells, Fuzhou (China); Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou, Jiangsu (China); Wang, Xiechun; Lai, Yunfeng; Cheng, Shuying; Zheng, Qiao; Yu, Jinlin [Fuzhou University, School of Physics and Information Engineering, and Institute of Micro-Nano Devices and Solar Cells, Fuzhou (China)

2017-10-15

Rare-earth ion-doped upconversion (UC) materials show great potential applications in optical and optoelectronic devices due to their novel optical properties. In this work, hexagonal KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} nanoparticles (NPs) were successfully synthesized by a hydrothermal method, and remarkably enhanced upconversion luminescence in green and red emission bands in KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} NPs has been achieved by doping Al{sup 3+} ions under 980 nm excitation. Compared to the aluminum-free KLaF{sub 4}:Yb{sup 3+}/Er{sup 3+} NPs sample, the UC fluorescence intensities of the green and red emissions of NPs doped with 10 at.% Al{sup 3+} ions were significantly enhanced by 5.9 and 7.3 times, respectively. Longer lifetimes of the doped samples were observed for the {sup 4}S{sub 3/2} state and {sup 4}F{sub 9/2} state. The underlying reason for the UC enhancement by doping Al{sup 3+} ions was mainly ascribed to distortion of the local symmetry around Er{sup 3+} ions and adsorption reduction of organic ligands on the surface of NPs. In addition, the influence of doping Al{sup 3+} ions on the structure and morphology of the NPs samples was also discussed. (orig.)

First-principles study on doping and temperature dependence of thermoelectric property of Bi2S3 thermoelectric material

International Nuclear Information System (INIS)

Guo, Donglin; Hu, Chenguo; Zhang, Cuiling

2013-01-01

Graphical abstract: The direction-induced ZT is found. At ZZ direction and n = 1.47 × 10 19 cm −3 , the ZT can reach maximal value, 0.36, which is three times as much as maximal laboratorial value. This result matches well the analysis of electron effective mass. Highlights: ► Electrical transportations of Bi 2 S 3 depend on the concentration and temperature. ► The direction-induced ZT is found. ► At ZZ direction and n = 1.47 × 10 19 cm −3 , the ZT can reach maximal value, 0.36. ► The maximal ZT value is three times as much as maximal laboratorial value. ► By doping and temperature tuning, Bi 2 S 3 is a promising thermoelectric material. - Abstract: The electronic structure and thermoelectric property of Bi 2 S 3 are investigated. The electron and hole effective mass of Bi 2 S 3 is analyzed in detail, from which we find that the thermoelectric transportation varies in different directions in Bi 2 S 3 crystal. Along ac plane the higher figure of merit (ZT) could be achieved. For n-type doped Bi 2 S 3 , the optimal doping concentration is found in the range of (1.0–5.0) × 10 19 cm −3 , in which the maximal ZT reaches 0.21 at 900 K, but along ZZ direction, the maximal ZT reaches 0.36. These findings provide a new understanding of thermoelectricity-dependent structure factors and improving ZT ways. The donor concentration N increases as T increases at one bar of pressure under a suitable chemical potential μ, but above this chemical potential μ, the donor concentration N keeps a constant

Al{sub 2}O{sub 3} doping of TiO{sub 2} electrodes and applications in dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Eom, Tae Sung; Kim, Kyung Hwan; Bark, Chung Wung; Choi, Hyung Wook [Gachon University, Seongnam (Korea, Republic of)

2014-08-15

Dye-sensitized solar cells (DSSCs) have been intensively studied since their discovery in 1991. DSSCs have been extensively researched over the past decades as cheaper alternatives to silicon solar cells due to their high energy-conversion efficiency and their low production cost. However, some problems need to be solved in order to enhance the efficiency of DSSCs. In particular, the electron recombination that occurs due to the contact between the transparent conductive oxide (TCO) and a redox electrolyte is one of the main limiting factors of efficiency. In this work, we report for the first time the improvement of the photovoltaic characteristics of DSSCs by doping TiO{sub 2} with Al{sub 2}O{sub 3}. DSSCs were constructed using composite particles of Al{sub 2}O{sub 3}-doped TiO{sub 2} and TiO{sub 2} nanoparticles. The DSSCs using Al{sub 2}O{sub 3} showed the maximum conversion efficiency of 6.29% due to effective electron transport. DSSCs based on Al{sub 2}O{sub 3}-doped TiO{sub 2} films showed better photovoltaic performance than cells fabricated with only TiO{sub 2} nanoparticles. This result is attributed to the prevention of electron recombination between electrons in the TiO{sub 2} conduction band with holes in the dye or the electrolyte. There mechanism is suggested based on impedance results, which indicated improved electron transport at the TiO{sub 2}/dye/electrolyte interface.

Hole transport in c-plane InGaN-based green laser diodes

Energy Technology Data Exchange (ETDEWEB)

Cheng, Yang; Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn; Tian, Aiqin; Zhang, Feng; Feng, Meixin; Hu, Weiwei; Zhang, Shuming; Ikeda, Masao; Li, Deyao; Zhang, Liqun; Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123 (China)

2016-08-29

Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

Redox behavior of a low-doped Pr-CeO{sub 2}(111) surface. A DFT+U study

Energy Technology Data Exchange (ETDEWEB)

Milberg, Brian [ITHES, UBA-CONICET, Departamento de Ingeniería Química, Pabellón de Industrias, Ciudad Universitaria, 1428 Buenos Aires (Argentina); Juan, Alfredo [Departamento de Física & IFISUR, UNS-CONICET, Avda. Alem 1253, 8000 Bahía Blanca (Argentina); Irigoyen, Beatriz, E-mail: beatriz@di.fcen.uba.ar [ITHES, UBA-CONICET, Departamento de Ingeniería Química, Pabellón de Industrias, Ciudad Universitaria, 1428 Buenos Aires (Argentina)

2017-04-15

Highlights: • Pr doping facilitates oxygen donation due to the easy formation of Pr{sup 3+}/Pr{sup 4+} and Ce{sup 3+}/Ce{sup 4+} redox couples. • Pr doping also favors the formation of superoxide (O{sub 2}{sup −}) radicals on surface O-holes. • CO can be oxidized by superoxide radical forming a CO{sub 2} molecule floating on the surface. • CO can also interact on the (O{sub 2}{sup −})/Pr{sup 3+} interphase and forms weakly adsorbed carbonate-type intermediates. - Abstract: In this work, we investigated the redox behavior (donation and replenishing of oxygen) of a low praseodymium (Pr)-doped CeO{sub 2}(111) surface. We considered a 3.7 at.% Pr doping and performed density functional calculations using the GGA formalism with the ‘U’ correction on Ce(4f) and Pr(4f) orbitals. Our results indicate that Pr doping promotes oxygen donation by lowering the energy necessary to form surface anionic vacancies. When the Ce{sub 0.963}Pr{sub 0.037}O{sub 2}(111) surface donates one oxygen, the two excess electrons locate on Pr and Ce cations and reduce them to Pr{sup 3+} and Ce{sup 3+} ones. Praseodymium doping also favors the activation of O{sub 2} molecule on surface O-holes, leading to formation of a superoxide (O{sub 2}{sup −}) radical as well as to reoxidation of the Ce{sup 3+} cation to Ce{sup 4+} one. Additionally, we used the CO molecular adsorption for testing the reactivity of those superoxide species. The calculations expose the ability of these radicals to oxidize CO forming a CO{sub 2} molecule floating on the surface. However, when the superoxide is in the immediate vicinity of Pr dopant a carbonate-type species is formed. Our theoretical results may help to gain insight into redox properties and improved catalytic performance of low-doped Pr-CeO{sub 2} solids.

Optimization of the Laser Properties of Polymer Films Doped with N,N´-Bis(3-methylphenyl-N,N´-diphenylbenzidine

Directory of Open Access Journals (Sweden)

María A. Díaz-García

2009-09-01

Full Text Available This review compiles the work performed in the field of organic solid-state lasers with the hole-transporting organic molecule N,N´-bis(3-methylphenyl-N,N´-diphenylbenzidine system (TPD, in view of improving active laser material properties. The optimization of the amplified spontaneous emission characteristics, i.e., threshold, linewidth, emission wavelength and photostability, of polystyrene films doped with TPD in waveguide configuration has been achieved by investigating the influence of several materials parameters such as film thickness and TPD concentration. In addition, the influence in the emission properties of the inclusion of a second-order distributed feedback grating in the substrate is discussed.

Temperature Mapping of Air Film-Cooled Thermal Barrier Coated Surfaces Using Cr-Doped GdAlO3 Phosphor Thermography

Science.gov (United States)

Eldridge, Jeffrey I.; Shyam, Vikram; Wroblewski, Adam C.; Zhu, Dongming; Cuy, Michael D.; Wolfe, Douglas E.

2016-01-01

It has been recently shown that the high luminescence intensity from a Cr-doped GdAlO3 (Cr:GdAlO3) thermographic phosphor enables non-rastered full-field temperature mapping of thermal barrier coating (TBC) surfaces to temperatures above 1000C. In this presentation, temperature mapping by Cr:GdAlO3 based phosphor thermometry of air film-cooled TBC-coated surfaces is demonstrated for both scaled-up cooling hole geometries as well as for actual components in a burner rig test environment. The effects of thermal background radiation and flame chemiluminescence on the measurements are investigated, and advantages of this method over infrared thermography as well as the limitations of this method for studying air film cooling are discussed.

Growth and properties of oxygen- and ion-doped Bi2Sr2CaCu2O8+δ single crystals

Science.gov (United States)

Mitzi, D. B.; Lombardo, L. W.; Kapitulnik, A.; Laderman, S. S.; Jacowitz, R. D.

1990-04-01

A directional solidification method for growing large single crystals in the Bi2Sr2CaCu2O8+δ system is reported. Ion doping, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Doped and undoped crystals have been characterized using microprobe analysis, x-ray diffraction, thermogravimetric analysis, and magnetic and Hall measurements. Ion doping results in little change of the superconducting transition for substitution levels below 20-25%, while beyond this level the Meissner signal broadens and the low-temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals provide evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90 (as made) to 77 K (oxygen pressure annealed), while the carrier concentrations, as determined from Hall effect measurements, increase from n=3.1(3)×1021 cm-3 (0.34 holes per Cu site) to 4.6(3)×1021 cm-3 (0.50 holes per Cu site). No degradation of the Meissner transition or other indications of inhomogeneity or phase segregation with doping are noted, suggesting that oxygen-doped Bi2Sr2CaCu2O8+δ is a suitable system for pursuing doping studies. The decrease in Tc with concentration for 0.34<=n<=0.50 indicates that a high-carrier-concentration regime exists in which Tc decreases with n and suggests that this decrease does not arise from material inhomogeneity or other materials problems. An examination of the variation of Tc with the density of states and lattice constants for all of the doped and undoped superconducting samples considered here indicates that changes in Tc with doping are primarily affected by changes in the density of states (or carrier concentration) rather than by structural variation induced by the doping.

NIR to visible upconversion in Er3+/Yb3+ co-doped CaYAl3O7 phosphor obtained by solution combustion process

International Nuclear Information System (INIS)

Singh, Vijay; Rai, Vineet Kumar; Al-Shamery, Katharina; Nordmann, Joerg; Haase, Markus

2011-01-01

Using the combustion synthesis, CaYAl 3 O 7 :Er 3+ phosphor powders co-doped with Yb 3+ have been prepared at low temperatures (550 o C) in a few minutes. Formation of the compound was confirmed by X-ray powder diffraction. Near-infrared to visible upconversion fluorescence emission in the Er 3+ doped CaYAl 3 O 7 phosphor powder has been observed. The effect of co-doping with triply ionized ytterbium in the CaYAl 3 O 7 :Er 3+ phosphor has been studied and the process involved is discussed. - Highlights: → The green emitting up-conversion CaYAl 3 O 7 :Er 3+ phosphor powders co-doped with Yb 3+ have been prepared by easy combustion method. → The combustion method is a simple, energy saving, fast and economical viable process. → The luminescence intensity in the co-doped phosphor is enhanced by several times compared to that of the singly (Er 3+ ) doped phosphor.

Use of interfacial layers to prolong hole lifetimes in hematite probed by ultrafast transient absorption spectroscopy

Science.gov (United States)

Paradzah, Alexander T.; Diale, Mmantsae; Maabong, Kelebogile; Krüger, Tjaart P. J.

2018-04-01

Hematite is a widely investigated material for applications in solar water oxidation due primarily to its small bandgap. However, full realization of the material continues to be hampered by fast electron-hole recombination rates among other weaknesses such as low hole mobility, short hole diffusion length and low conductivity. To address the problem of fast electron-hole recombination, researchers have resorted to growth of nano-structured hematite, doping and use of under-layers. Under-layer materials enhance the photo-current by minimising electron-hole recombination through suppressing of back electron flow from the substrate, such as fluorine-doped tin oxide (FTO), to hematite. We have carried out ultrafast transient absorption spectroscopy on hematite in which Nb2O5 and SnO2 materials were used as interfacial layers to enhance hole lifetimes. The transient absorption data was fit with four different lifetimes ranging from a few hundred femtoseconds to a few nanoseconds. We show that the electron-hole recombination is slower in samples where interfacial layers are used than in pristine hematite. We also develop a model through target analysis to illustrate the effect of under-layers on electron-hole recombination rates in hematite thin films.

Self-energy behavior away from the Fermi surface in doped Mott insulators.

Science.gov (United States)

Merino, J; Gunnarsson, O; Kotliar, G

2016-02-03

We analyze self-energies of electrons away from the Fermi surface in doped Mott insulators using the dynamical cluster approximation to the Hubbard model. For large onsite repulsion, U, and hole doping, the magnitude of the self-energy for imaginary frequencies at the top of the band ([Formula: see text]) is enhanced with respect to the self-energy magnitude at the bottom of the band ([Formula: see text]). The self-energy behavior at these two [Formula: see text]-points is switched for electron doping. Although the hybridization is much larger for (0, 0) than for [Formula: see text], we demonstrate that this is not the origin of this difference. Isolated clusters under a downward shift of the chemical potential, [Formula: see text], at half-filling reproduce the overall self-energy behavior at (0, 0) and [Formula: see text] found in low hole doped embedded clusters. This happens although there is no change in the electronic structure of the isolated clusters. Our analysis shows that a downward shift of the chemical potential which weakly hole dopes the Mott insulator can lead to a large enhancement of the [Formula: see text] self-energy for imaginary frequencies which is not associated with electronic correlation effects, even in embedded clusters. Interpretations of the strength of electronic correlations based on self-energies for imaginary frequencies are, in general, misleading for states away from the Fermi surface.

Atomic and electronic structure of doped Si (111 ) (2 √{3 }×2 √{3 }) R 30∘ -Sn interfaces

Science.gov (United States)

Yi, Seho; Ming, Fangfei; Huang, Ying-Tzu; Smith, Tyler S.; Peng, Xiyou; Tu, Weisong; Mulugeta, Daniel; Diehl, Renee D.; Snijders, Paul C.; Cho, Jun-Hyung; Weitering, Hanno H.

2018-05-01

The hole-doped Si (111 ) (2 √ 3 ×2 √ 3 ) R 30∘ -Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition is seen in electron-doped systems. To elucidate the nature and driving force of this phenomenon, the structure of the interface must be resolved. Here we report on an extensive experimental and theoretical study, including scanning tunneling microscopy and spectroscopy (STM/STS), dynamical low-energy electron diffraction (LEED) analysis, and density functional theory (DFT) calculations, to elucidate the structure of this interface. We consider six different structure models, three of which have been proposed before, and conclude that only two of them can account for the majority of experimental data. One of them is the model according to Törnevik et al. [C. Törnevik et al., Phys. Rev. B 44, 13144 (1991), 10.1103/PhysRevB.44.13144] with a total Sn coverage of 14/12 monolayers (ML). The other is the "revised trimer model" with a total Sn coverage of 13/12 ML, introduced in this work. These two models are very difficult to discriminate on the basis of DFT or LEED alone, but STS data clearly point toward the Törnevik model as the most viable candidate among the models considered here. The STS data also provide additional insights regarding the electron-injection-driven phase transformation. Similar processes may occur at other metal/semiconductor interfaces, provided they are nonmetallic and can be doped. This could open up a new pathway toward the creation of novel surface phases with potentially very interesting and desirable electronic properties.

Bromine-doped DWNTs: A Molecular Faraday Cage

Science.gov (United States)

Chen, Gugang; Margine, Roxana; Gupta, Rajeev; Crespi, Vincent; Eklund, Peter; Sumanasekera, Gamini; Bandow, Shunji; Iijima, S.

2003-03-01

Raman scattering is used to probe the charge transfer distribution in Bromine-doped double-walled carbon nanotubes (DWNT). Using 1064 nm and 514.5 nm laser excitation we are able to study the charge-transfer sensitive phonons in the inner ( (5,5)) and outer ( (10,10)) tubes of the double-walled pair. The experimental results are compared to our tight binding band structure calculations that include a self-consistent electrostatic term sensitive to the average net charge density on each tube. Upon doping, the nanotube tangential and radial Raman bands from the outer (primary) tubes were observed to shift dramatically to higher frequencies, consistent with a C-C bond contraction driven by the acceptor-doping. The peak intensities of these bands significantly decreased with increasing doping exposure, and they eventually vanished, consistent with a deep depression in the Fermi energy that extinguishes the resonant Raman effect. Interestingly, at the same time, we observed little or no change for the tangential and radial Raman features identified with the inner (secondary) tubes during the bromine doping. Our electronic structure calculations show that the charge distribution between the outer and inner tubes depends on doping level and also, to some extent, on specific tube chirality combinations. In general, in agreement with experiment, the calculations find a very small net charge on the inner tube, consistent with a "Molecular Faraday Effect", e.g., a DWNT of (10, 10)/ (5, 5) configuration that exhibits 0.5 holes/Å total charge transfer, has only 0.04 holes/Å on the inner (secondary) tube.

Luminescence properties of Ce3+ doped gadolinium-calcium-silicaborate glass scintillator

International Nuclear Information System (INIS)

Park, J.M.; Ha, D.H.; Kaewjeang, S.; Maghanemi, U.; Kothan, S.; Kaewkhao, J.; Kim, H.J.

2016-01-01

In this work, the Ce 3+ doped gadolinium-calcium-silicaborate glass scintillators of the composition ratio 25Gd 2 O 3 :10CaO:10SiO 2 :(55−x)B 2 O 3 :xCeF 3 , have been fabricated by using the melt-quenching technique. The doping concentration of the Ce 3+ was varied from 0.05 mol% to 2.5 mol%. The 4f-5d transition of the Ce 3+ allowed scintillation with a fast decay time. The absorption spectrum, X-ray induced emission spectrum, photo luminescence spectrum, laser luminescence spectrum and decay time of the scintillators were measured for studying the luminescence properties. From the X-ray induced emission spectrum result, we checked the trend between doping concentration and light yield. The laser induced luminescence spectrum was measured while changing the temperature from 300 K to 10 K. We also measured the decay time by using the laser excitation of the 0.15 mol% Ce 3+ doped glass scintillator. - Highlights: • Ce 3+ doped gadolinium-calcium-silicaborate glass scintillators were developed. • Glass is easily fabricated with large sizes and various doping materials. • The luminescence properties are studied by using various radiation sources. • The light yield and decay time were measured at low temperature. • One decay time component is found.

Quantum dot laser optimization: selectively doped layers

Science.gov (United States)

Korenev, Vladimir V.; Konoplev, Sergey S.; Savelyev, Artem V.; Shernyakov, Yurii M.; Maximov, Mikhail V.; Zhukov, Alexey E.

2016-08-01

Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics.

Quantum dot laser optimization: selectively doped layers

International Nuclear Information System (INIS)

Korenev, Vladimir V; Konoplev, Sergey S; Savelyev, Artem V; Shernyakov, Yurii M; Maximov, Mikhail V; Zhukov, Alexey E

2016-01-01

Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics. (paper)

Impedance spectroscopy of Li2CO3 doped (Ba,Sr)TiO3 ceramic

Science.gov (United States)

Ham, Yong-Su; Koh, Jung-Hyuk

2013-02-01

(BaxSr1-x)TiO3-based ceramic has been considered as one of the most important electronic materials widely employed in microwave passive device applications. Many researches have been performed to lower the high sintering temperature, by adding various dopants such as B2O3, La2O3, etc. In our previous study, by adding Li2CO3 to (Ba0.5,Sr0.5)TiO3 ceramics, the sintering temperature of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics decreased from 1350 to 900 °C. This study observed the crystalline structure and electrical properties of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics. In scanning the crystalline structure of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics, no pyro phase was observed by X-ray diffraction analysis. To investigate the electrical properties of Li2CO3 doped (Ba0.5,Sr0.5)TiO3 ceramics, real and imaginary parts of the impedances were analyzed. Complex impedance data were measured from 100 Hz to 1 MHz at various temperature ranges.

Solvothermal syntheses of Bi and Zn co-doped TiO{sub 2} with enhanced electron-hole separation and efficient photodegradation of gaseous toluene under visible-light

Energy Technology Data Exchange (ETDEWEB)

Li, Juan-Juan [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Cai, Song-Cai [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); University of Chinese Academy of Sciences, Beijing, 100049 (China); Xu, Zhen [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Chen, Xi [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); University of Chinese Academy of Sciences, Beijing, 100049 (China); Chen, Jin [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Jia, Hong-Peng, E-mail: hpjia@iue.ac.cn [Center for Excellence in Regional Atmospheric Environment, and Key Laboratory of Urban Pollutant Conversion, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021 (China); Chen, Jing, E-mail: jing.chen@fjirsm.ac.cn [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002 (China)

2017-03-05

Highlights: • Bi-Zn co-doped TiO{sub 2} catalysts were prepared by solvothermal route. • The incorporation of Bi doping into the TiO{sub 2} generates intermediate energy levels. • Bi and Zn doping showed the enhanced absorption in visible-light region. • Zn dopant acts as a mediator of interfacial charge transfer. • TiBi{sub 1.9%}Zn{sub 1%}O{sub 2} exhibited high photocatalytic degradation for toluene. - Abstract: This study investigated the effects of Bi doped and Bi-Zn co-doped TiO{sub 2} on photodegradation of gaseous toluene. The doped TiO{sub 2} with various concentration of metal was prepared using the solvothermal route and characterized by SEM, XRD, Raman, BET, DRS, XPS, PL and EPR. Their photocatalytic activities under visible-light irradiation were drastically influenced by the dopant content. The results showed that moderate metal doping levels were obviously beneficial for the toluene degradation, while high doping levels suppressed the photocatalytic activity. The photocatalytic degradation of toluene over TiBi{sub 1.9%}O{sub 2} and TiBi{sub 1.9%}Zn{sub 1%}O{sub 2} can reach to 51% and 93%, respectively, which are much higher than 25% of TiO{sub 2}. Bi doping into TiO{sub 2} lattice generates new intermediate energy level of Bi below the CB edge of TiO{sub 2}. The electron excitation from the VB to Bi orbitals results in the decreased band gap, extended absorption of visible-light and thus enhances its photocatalytic efficiency. Zn doping not only further enhances the absorption in this visible-light region, but also Zn dopant exists as the form of ZnO crystallites located on the interfaces of TiO{sub 2} agglomerates and acts as a mediator of interfacial charge transfer to suppress the electron-hole recombination. These synergistic effects are responsible for the enhanced photocatalytic performance.

Effects of doping on spin correlations in the periodic Anderson model

International Nuclear Information System (INIS)

Bonca, J.; Gubernatis, J.E.

1998-01-01

We studied the effects of hole doping on spin correlations in the two-dimensional periodic Anderson model, mainly at the full and three-quarters-full lower bands cases. In the full lower band case, strong antiferromagnetic correlations develop when the on-site repulsive interaction strength U becomes comparable to the quasiparticle bandwidth. In the three-quarters full case, a kind of spin correlation develops that is consistent with the resonance between a (π,0) and a (0,π) spin-density wave. In this state the spins on different sublattices appear uncorrelated. Hole doping away from the completely full case rapidly destroys the long-range antiferromagnetic correlations, in a manner reminiscent of the destruction of antiferromagnetism in the Hubbard model. In contrast to the Hubbard model, the doping does not shift the peak in the magnetic structure factor from the (π,π) position. At dopings intermediate to the full and three-quarters full cases, only weak spin correlations exist. copyright 1998 The American Physical Society

Photoluminescence characteristics of reddish-orange Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors

Energy Technology Data Exchange (ETDEWEB)

Jeong, Jun Ho; Bandi, Vengala Rao; Grandhe, Bhaskar Kumar; Jang, Ki Wan; Lee, Ho Sueb [Changwon National University, Changwon (Korea, Republic of); Yi, Soung Soo [Silla University, Busan (Korea, Republic of); Jeong, Jung Hyun [Pukyong National University, Busan (Korea, Republic of)

2011-02-15

Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors were synthesized by using a conventional solid state reaction method at 750 .deg. C. The emission spectra of KZnGd{sub 1-x}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} with {lambda}{sub ex} = 395 nm and KZnGd{sub 1-y}(PO{sub 4}){sub 2}:Sm{sup 3+}{sub y} with {lambda}{sub ex} = 403 nm phosphors showed intense {sup 5}D{sub 0} {yields} {sup 7}F{sub 1}, {sup 4}G{sub 5/2} {yields} {sup 6}H{sub 7/2} emission transitions at 595 nm and 599 nm, respectively. The optimum relative intensity of the KZnGd{sub 1-x-y}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} , Sm{sup 3+}{sub y} phosphor was obtained for the doping concentrations of (x = 0.09, y = 0.01). In addition, the temperature dependent luminescence intensity of the synthesized phosphors was investigated and the thermal stability of the KZnGd(PO{sub 4}){sub 2}:Eu{sup 3+} phosphor was found to be higher than that of standard YAG:Ce{sup 3+} and KZnGd{sub 1-x-y}(PO{sub 4}){sub 2}:Eu{sup 3+}{sub x} Sm{sup 3+}{sub y} under near ultra-violet (NUV) light emitting diode excitation (LED). Therefore, we suggest that Eu{sup 3+} or Sm{sup 3+} singly-doped and Eu{sup 3+} and Sm{sup 3+} co-doped KZnGd(PO{sub 4}){sub 2} phosphors should be efficient for different red-color-emitting display device applications and NUV-LED-based white-light-emitting diodes.

Multimode laser emission from dye-doped hollow polymer optical fibre

Indian Academy of Sciences (India)

2014-02-09

Feb 9, 2014 ... Dye-doped polymer optical fibre preforms were fabricated by the controlled polymeriza- tion of Rh B-doped methyl methacrylate (MMA). Hole in the preform can be achieved by placing a teflon rod on the centre of the glass tube during the polymerization. Final fibre structure with required diameter was ...

Potassium-doped zinc oxide as photocathode material in dye-sensitized solar cells.

Science.gov (United States)

Bai, Jie; Xu, Xiaobao; Xu, Ling; Cui, Jin; Huang, Dekang; Chen, Wei; Cheng, Yibing; Shen, Yan; Wang, Mingkui

2013-04-01

ZnO nanoparticles are doped with K and applied in p-type dye-sensitized solar cells (DSCs). The microstructure and dynamics of hole transportation and recombination are investigated. The morphology of the K-doped ZnO nanoparticles shows a homogeneous distribution with sizes in the range 30-40 nm. When applied in p-type DSCs in combination with C343 as sensitizer, the K-doped ZnO nanoparticles achieve a photovoltaic power conversion efficiency of 0.012 % at full-intensity sunlight. A further study on the device by transient photovoltage/photocurrent decay measurements shows that the K-doped ZnO nanoparticles have an appreciable hole diffusion coefficient (ca. 10(-6) cm(2) s(-1) ). Compared to the widely used p-type NiO nanoparticles, this advantage is crucial for further improving the efficiency of p-type DSCs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Color tunable emission through energy transfer from Yb3+ co-doped SrSnO3: Ho3+ perovskite nano-phosphor

Science.gov (United States)

Jain, Neha; Singh, Rajan Kr.; Sinha, Shriya; Singh, R. A.; Singh, Jai

2018-04-01

First time color tunable lighting observed from Ho3+ and Yb3+ co-doped SrSnO3 perovskite. Down-conversion and up-conversion (UC) photoluminescence emission spectra were recorded to understand the whole mechanism of energy migration between Ho3+ and Yb3+ ions. The intensity of green and red emission varies with Yb3+ doping which causes multicolour emissions from nano-phosphor. The intensity of UC red emission (654 nm) obtained from 1 at.% Ho3+ and 3 at.% Yb3+ co-doped nano-phosphor is nine times higher than from 1 at.% Ho3+ doped SrSnO3 nano-phosphor. Enhanced brightness of 654 nm in UC process belongs in biological transparency window so that it might be a promising phosphor in the bio-medical field. Moreover, for the other Yb3+ co-doped nano-phosphor, Commission Internationale de l'Éclairage chromaticity co-ordinates were found near the white region and their CCT values lie in the range 4900-5100 K indicating cool white. Decay time was measured for 545 nm emission of Ho3+ ion found in 7.652 and 8.734 µs at 355 nm excitation. The variation in lifetime was observed in ascending order with increasing Yb3+ concentration which supports PL emission spectra observation that with increasing Yb3+ concentration, rate of transition has changed. These studies reveal that Ho3+ and Yb3+ co-doped phosphor is useful for fabrication of white LEDs.

Effect of heavy Ag doping on the physical properties of ZnO

Science.gov (United States)

Hou, Qingyu; Zhao, Chunwang; Jia, Xiaofang; Xu, Zhenchao

2018-04-01

The band structure, density of state and absorption spectrum of Zn1‑xAgxO (x = 0.02778, 0.04167) were calculated. Results indicated that a higher doping content of Ag led to a higher total energy, lower stability, higher formation energy, narrower bandgap, more significant red shift of the absorption spectrum, higher relative concentration of free hole, smaller hole effective mass, lower mobility and better conductivity. Furthermore, four types of model with the same doping content of double Ag-doped Zn1‑xAgxO (x = 0.125) but different manners of doping were established. Two types of models with different doping contents of double Ag-doped Zn1‑xAgxO (x = 0.0626, 0.0833) but the same manner of doping, were also established. Under the same doping content and different ordering occupations in Ag double doping, the doped system almost caused magnetic quenching upon the nearest neighbor -Ag-O-Ag- bonding at the direction partial to the a- or b-axis. Upon the next-nearest neighbor of -Ag-O-Zn-O-Ag- bonding at the direction partial to the c-axis, the total magnetic moment of the doped system increased, and the doped system reached a Curie temperature above the room-temperature. All these results indicated that the magnetic moments of Ag double-doped ZnO systems decreased with increased Ag doping content. Within the range of the mole number of the doping content of 0.02778-0.04167, a greater Ag doping content led to a narrower bandgap of the doped system and a more significant red shift in the absorption spectrum. The absorption spectrum of the doped ZnO system with interstitial Ag also shows a red shift.

Utilization of the irradiation holes in the core at HANARO

International Nuclear Information System (INIS)

Lee, Shoong Sung; Ahn, Guk Hoon

2008-01-01

HANARO is a multipurpose research reactor. The three hexagonal and four circular holes are reserved for the irradiation tests in the core. Twenty holes including two NTD(Neutron Transmutation Doping) holes, a LH(Large Hole) and NAA holes are located in the reflector tank. These hole have been used for radioisotope production, material and fuel irradiation tests, beam application research and neutron activation analysis. In the initial stage of normal operation, the using time of irradiation holes located in the core was less the 40% of the reactor operation day. To raise utilization of irradiation holes, the equipment and facilities have been developed such as various capsules. Another area for increasing the utilization of HANARO was the fuel irradiation tests to develop the new fuels. Various fuel irradiation tests have been performed. Recently, the usage time of the irradiation holes in the core was more than 90% of the reactor operation day. If the FTL starts an irradiation service, the irradiation holes in the core will be fully used. In this paper describes the status of utilization of irradiation holes in the core

Possibility for hole doping into amorphous InGaZnO4 films prepared by RF sputtering

International Nuclear Information System (INIS)

Kobayashi, Kenkichiro; Kohno, Yoshiumi; Tomita, Yasumasa; Maeda, Yasuhisa; Matsushima, Shigenori

2011-01-01

Amorphous InGaZnO 4 (IGZO) films codoped with Al and N atoms were prepared by sputtering of targets consisting of IGZO and AlN powders in Ar + O 2 atmospheres. No hole-conductivity is seen in films deposited at 2 x 10 -3 Torr, whereas hole-conductivity is found in films deposited at 2 x 10 -2 Torr at radio frequency powers of 60-80 W in 0.3-0.6% O 2 atmospheres. The amorphous p-type IGZO film has the resistivity of 210 Wcm, hole-density of 7.5 x 10 17 cm -3 , and mobility of 0.4 cm 2 /Vs. The rectification characteristic is obtained for a device constructed from Au, amorphous p-type IGZO, and amorphous n-type IGZO. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigation of a CDDW Hamiltonian to Explore Possibility of Magneto-Quantum Oscillations in Electronic Specific Heat of Hole-Doped Cuprates

Directory of Open Access Journals (Sweden)

Partha Goswami

2010-01-01

Full Text Available We investigate a chiral d-density wave (CDDW mean field model Hamiltonian in the momentum space suitable for the hole-doped cuprates, such as YBCO, in the pseudogap phase to obtain the Fermi surface (FS topologies, including the anisotropy parameter(́ and the elastic scattering by disorder potential (|0|. For ́=0, with the chemical potential =−0.27 eV for 10% doping level and |0|≥|| (where ||=0.25 eV is the first neighbor hopping, at zero/non-zero magnetic field (, the FS on the first Brillouin zone is found to correspond to electron pockets around antinodal regions and barely visible patches around nodal regions. For ́≠0, we find Pomeranchuk distortion of FS. We next relate our findings regarding FS to the magneto-quantum oscillations in the electronic specific heat. Since the nodal quasiparticle energy values for =0 are found to be greater than for |0|≥||, the origin of the oscillations for nonzero corresponds to the Fermi pockets around antinodal regions. The oscillations are shown to take place in the weak disorder regime (|0|=0.25eV only.

Inverted Planar Perovskite Solar Cells with a High Fill Factor and Negligible Hysteresis by the Dual Effect of NaCl-Doped PEDOT:PSS.

Science.gov (United States)

Hu, Lijun; Sun, Kuan; Wang, Ming; Chen, Wei; Yang, Bo; Fu, Jiehao; Xiong, Zhuang; Li, Xinyi; Tang, Xiaosheng; Zang, Zhigang; Zhang, Shupeng; Sun, Lidong; Li, Meng

2017-12-20

The performance of inverted perovskite solar cells is highly dependent on hole extraction and surface properties of hole transport layers. To highlight the important role of hole transport layers, a facile and simple method is developed by adding sodium chloride (NaCl) into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The average power conversion efficiency of the perovskite solar cells prepared on NaCl-doped PEDOT:PSS is 17.1% with negligible hysteresis, compared favorably to the control devices (15.1%). Particularly, they exhibit markedly improved V oc and fill factor (FF), with the best FF as high as 81.9%. The enhancement of photovoltaic performance is ascribed to two effects. Better conductivity and hole extraction of PEDOT:PSS are observed after NaCl doping. More intriguingly, the perovskite polycrystalline film shows a preferred orientation along the (001) direction on NaCl-doped PEDOT:PSS, leading to a more uniform thin film. The comparison of the crystal structure between NaCl and MAPbCl 3 indicates a lattice constant mismatch less than 2% and a matched chlorine atom arrangement on the (001) surface, which implies that the NaCl crystallites on the top surface of PEDOT:PSS might serve as seeds guiding the growth of perovskite crystals. This simple method is fully compatible with printing technologies to mass-produce perovskite solar cells with high efficiency and tunable crystal orientations.

A VERY CLOSE BINARY BLACK HOLE IN A GIANT ELLIPTICAL GALAXY 3C 66B AND ITS BLACK HOLE MERGER

International Nuclear Information System (INIS)

Iguchi, Satoru; Okuda, Takeshi; Sudou, Hiroshi

2010-01-01

Recent observational results provide possible evidence that binary black holes (BBHs) exist in the center of giant galaxies and may merge to form a supermassive black hole in the process of their evolution. We first detected a periodic flux variation on a cycle of 93 ± 1 days from the 3 mm monitor observations of a giant elliptical galaxy 3C 66B for which an orbital motion with a period of 1.05 ± 0.03 yr had been already observed. The detected signal period being shorter than the orbital period can be explained by taking into consideration the Doppler-shifted modulation due to the orbital motion of a BBH. Assuming that the BBH has a circular orbit and that the jet axis is parallel to the binary angular momentum, our observational results demonstrate the presence of a very close BBH that has a binary orbit with an orbital period of 1.05 ± 0.03 yr, an orbital radius of (3.9 ± 1.0) x 10 -3 pc, an orbital separation of (6.1 +1.0 -0.9 ) x 10 -3 pc, a larger black hole mass of (1.2 +0.5 -0.2 ) x 10 9 M sun , and a smaller black hole mass of (7.0 +4.7 -6.4 ) x 10 8 M sun . The BBH decay time of (5.1 +60.5 -2.5 ) x 10 2 yr provides evidence for the occurrence of black hole mergers. This Letter will demonstrate the interesting possibility of black hole collisions to form a supermassive black hole in the process of evolution, one of the most spectacular natural phenomena in the universe.

Quantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters

KAUST Repository

Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah; Shakfa, M. Khaled; Ng, Tien Khee; Ooi, Boon S.

2018-01-01

P-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

Quantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters

KAUST Repository

Zhao, Chao

2018-05-29

P-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

Theory of photoresistors on the base of trapezoidal δ-doped superlattices

International Nuclear Information System (INIS)

Osipov, V.V.; Selyakov, A.Yu.; Foygel, M.

1999-01-01

A theory of far infrared photoresistors that is based on trapezoidal δ-doped superlattices (TSL) has been developed. It is shown that photoconductivity of TSL in monopolar despite the interband absorption and generation of electron - hole pairs. In this way, photoelectric gain and responsivity of TSL photoresistor can reach gigantic values. It is established that tunneling-radiative lifetime of electron-hole pairs determines the kinetics of photoconductivity decay. It is shown that a surprising effect takes place: voltage responsivity does not depend virtually on lifetime of nonequilibrium carriers and on the doping level of TSL photoresistor and can reach gigantic values [ru

Multimodal emissions from Tb{sup 3+}/Yb{sup 3+} co-doped lithium borate glass: Upconversion, downshifting and quantum cutting

Energy Technology Data Exchange (ETDEWEB)

Bahadur, A.; Yadav, R.S.; Yadav, R.V.; Rai, S.B., E-mail: sbrai49@yahoo.co.in

2017-02-15

This paper reports the optical properties of Tb{sup 3+}/Yb{sup 3+} co-doped lithium borate (LB) glass prepared by melt quench method. The absorption spectrum of the Yb{sup 3+} doped LB glass contains intense NIR band centered at 976 nm due to {sup 2}F{sub 7/2}→{sup 2}F{sub 5/2} transition. The emission spectra of the prepared glasses have been monitored on excitation with 266, 355 and 976 nm. The Yb{sup 3+} doped glass emits a broad NIR band centered at 976 nm whereas the Tb{sup 3+} doped glass gives off visible bands on excitations with 266 and 355 nm. When the Tb{sup 3+} and Yb{sup 3+} ions are co-doped together, the emission intensity in the visible region decreases whereas it increases in the NIR region significantly. The increase in the emission intensity in the NIR region is due to efficient cooperative energy transfer (CET) from Tb{sup 3+} to Yb{sup 3+} ions. The quantum cutting efficiency for Tb{sup 3+}/Yb{sup 3+} co-doped glass has been calculated and compared for 266 and 355 nm excitations. The quantum cutting efficiency is larger for 355 nm excitation (137%). The Tb{sup 3+}/Yb{sup 3+} co-doped LB glass also emits upconverted visible bands on excitation with 976 nm. The mechanisms involved in the energy transfer have been discussed using schematic energy level diagram. The Tb{sup 3+}/Yb{sup 3+} co-doped LB glass may be used in the optical devices and in solar cell for solar spectral conversion and behaves as a multi-modal photo-luminescent material. - Graphical abstract: The Tb{sup 3+}/Yb{sup 3+} co-doped lithium borate (LB) glass prepared by melt quench method emits upconverted visible emissions through upconversion CET from Yb{sup 3+} to Tb{sup 3+} ions and quantum cutting emissions through downconversion CET from Tb{sup 3+} to Yb{sup 3+} ions. Therefore, the Tb{sup 3+}/Yb{sup 3+} co-doped LB glass may find applications in optical devices and solar cell and behaves as a multi-modal photo-luminescent material. - Highlights: • The Tb{sup 3+}/Yb{sup 3

Exciton generation/dissociation/charge-transfer enhancement in inorganic/organic hybrid solar cells by robust single nanocrystalline LnPxOy (Ln = Eu, Y) doping.

Science.gov (United States)

Jin, Xiao; Sun, Weifu; Chen, Zihan; Wei, Taihuei; Chen, Chuyang; He, Xingdao; Yuan, Yongbiao; Li, Yue; Li, Qinghua

2014-06-11

Low-temperature solution-processed photovoltaics suffer from low efficiencies because of poor exciton or electron-hole transfer. Inorganic/organic hybrid solar cell, although still in its infancy, has attracted great interest thus far. One of the promising ways to enhance exciton dissociation or electron-hole transport is the doping of lanthanide phosphate ions. However, the underlying photophysical mechanism remains poorly understood. Herein, by applying femtosecond transient absorption spectroscopy, we successfully distinguished hot electron, less energetic electron, hole transport from electron-hole recombination. Concrete evidence has been provided that lanthanide phosphate doping improves the efficiency of both hot electron and "less energetic" electron transfers from donor to acceptor, but the hole transport almost remains unchanged. In particular, the hot electron transfer lifetime was shortened from 30.2 to 12.7 ps, that is, more than 60% faster than pure TiO2 acceptor. Such improvement was ascribed to the facts that the conduction band (CB) edge energy level of TiO2 has been elevated by 0.2 eV, while the valence band level almost remains unchanged, thus not only narrowing the energy offset between CB levels of TiO2 and P3HT, but also meanwhile enlarging the band gap of TiO2 itself that permits one to inhibit electron-hole recombination within TiO2. Consequently, lanthanide phosphate doped TiO2/P3HT bulk-heterojunction solar cell has been demonstrated to be a promising hybrid solar cell, and a notable power conversion efficiency of 2.91% is therefore attained. This work indicates that lanthanide compound ions can efficiently facilitate exciton generation, dissociation, and charge transport, thus enhancing photovoltaic performance.

Intrinsic Local Distortions and charge carrier behavior in CMR manganites and cobaltites

Science.gov (United States)

Bridges, Frank

2010-03-01

We compare and contrast the local structure and electronic configurations in two oxide systems La1-xSrxCoO3 (LSCO) and La1-yCayMnO3 (LCMO). Although these oxides may appear quite similar they have rather different properties. At x=0, LaCoO3 (LCO) has unusual magnetic properties - diamagnetic at low T but developing a moment near 100K. The Sr doped LSCO materials show ferromagnetism for x > 0.2. For LCO, one of the possible spin state configurations called the intermediate spin (IS) state (S=1), should be Jahn-Teller (JT) active, while the low spin (S=0) and high spin (S=2) states have no JT distortion. Early local structure measurements suggested a JT distortion was present in LCO and therefore supported an IS spin model. However we find no evidence for any significant JT distortion (and hence no support for the IS model) for a range of bulk and nanoparticle cobaltites La1-xSrxCoO3, x = 0 - 0.35. In contrast there are large JT distortions in the manganites LCMO, 0.2 K-edge XANES data that shown no significant shift of the edge for the cobaltites as the Sr concentration increases from x =0 to 0.35 indicating essentially no change in the electronic configuration about Co; consequently, the holes introduced via Sr doping appear to go primarily into the O bands. In contrast there is a large shift of the Mn K-edge with Ca doping indicating a change in the average Mn valence, and a corresponding change in the Mn electronic configuration. We briefly discuss some possible models.

Remarkable photo-catalytic degradation of malachite green by nickel doped bismuth selenide under visible light irradiation

International Nuclear Information System (INIS)

Kulsi, Chiranjit; Ghosh, Amrita; Mondal, Anup; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

2017-01-01

Highlights: • Bi_2Se_3 and Ni doped Bi_2Se_3 were synthesized by solvothermal approach. • Presence of nickel was confirmed by X-ray photoelectron spectroscopy (XPS) measurement. • Complete degradation of malachite green (MG) dye was achieved by Ni doped Bi_2Se_3 with H_2O_2. • Remarkable photo-catalytic degradation by doped bismuth selenide has been explained. • Scavenger tests show degradation of MG is mainly dominated by ·OH oxidation process. - Abstract: Bismuth selenide (Bi_2Se_3) and nickel (Ni) doped Bi_2Se_3 were prepared by a solvothermal approach to explore the photo-catalytic performance of the materials in degradation of malachite green (MG). The presence of nickel was confirmed by X-ray photoelectron spectroscopy (XPS) measurement in doped Bi_2Se_3. The results showed that the nickel doping played an important role in microstructure and photo-catalytic activity of the samples. Nickel doped Bi_2Se_3 sample exhibited higher photo-catalytic activity than that of the pure Bi_2Se_3 sample under visible-light irradiation. The photo-catalytic degradation followed first-order reaction kinetics. Fast degradation kinetics and complete (100% in 5 min of visible light irradiation) removal of MG was achieved by nickel doped Bi_2Se_3 in presence of hydrogen peroxide (H_2O_2) due to modification of band gap energies leading to suppression of photo-generated electron-hole recombination.

A hole accelerator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Science.gov (United States)

Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

2017-07-01

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

Pseudo-particles picture in single-hole-doped two-dimensional Neel ordered antiferromagnet

International Nuclear Information System (INIS)

Pereira, A R; Ercolessi, E; Pires, A S T

2007-01-01

Using the nonlinear σ model on a non-simply connected manifold, we consider the interaction effects between the elementary excitations (magnons and skyrmions) and static spin vacancy (hole) in two-dimensional quantum antiferromagnetic systems. Holes scatter magnons and trap skyrmions. The phase-shifts of the scattered magnons are obtained and used to calculate the zero point energy of spin waves measured with respect to the vacuum. It is suggested that this zero point energy lowers the energy cost of removing spins from the lattice. We also study the problems of the skyrmion-hole interactions and the skyrmion-hole (half-skyrmion-hole) bound states in the presence of magnons. We argue that two adjacent non-magnetic impurities are attracted when they are placed at the centre of half-skyrmions

Static spin-3/2 perturbations of two-black hole system

International Nuclear Information System (INIS)

Embacher, F.; Aichelburg, P.C.

1984-01-01

We construct the most general static regular, non-gauge spin-3/2 perturbations on the Majumdar-Papapetrou background for two black holes. The construction applies a limiting procedure by combining Killing spinors and spacetime perturbations. The supercharge associated with the spin-3/2 field is proportional to the difference of the mass parameters, implying that a system of two equal black holes has zero supercharge. (Author)

Electrochemical sensing behaviour of Ni doped Fe{sub 3}O{sub 4} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Suresh, R.; Giribabu, K.; Manigandan, R.; Narayanan, V., E-mail: vnnara@yahoo.co.in [Department of Inorganic Chemistry, University of Madras, Guindy Campus, Chennai 600 025 (India); Vijayalakshmi, L. [Annai Veilankanni' s College for Women (Arts and Science), Saidapet, Chennai 600015 (India); Stephen, A. [Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600 025 (India)

2014-01-28

Ni doped Fe{sub 3}O{sub 4} nanoparticles were synthesized by simple hydrothermal method. The prepared nanomaterials were characterized by X-ray diffraction analysis, DRS-UV-Visible spectroscopy and field emission scanning electron microscopy. The XRD confirms the phase purity of the synthesized Ni doped Fe{sub 3}O{sub 4} nanoparticles. The optical property of Ni doped Fe{sub 3}O{sub 4} nanoparticles were studied by DRS UV-Visible analysis. The electrochemical sensing property of pure and Ni doped Fe{sub 3}O{sub 4} nanoparticles were examined using uric acid as an analyte. The obtained results indicated that the Ni doped Fe{sub 3}O{sub 4} nanoparticles exhibited higher electrocatalytic activity towards uric acid.

Luminescent properties and quenching effects of Pr3+ co-doping in SiO2:Tb3+/Eu3+ nanophosphors

CSIR Research Space (South Africa)

Mhlongo, GH

2014-02-01

Full Text Available Luminescence properties of Pr(sup3+) single doped SiO2 and Pr(sup3+) co-doped SiO(sub2):Tb(sup3+)/Eu(sup3+) nanophosphors synthesized using sol–gel method were investigated. X-ray diffraction (XRD), and scanning electron microscope (SEM) were used...

Statistical transmutation in doped quantum dimer models.

Science.gov (United States)

Lamas, C A; Ralko, A; Cabra, D C; Poilblanc, D; Pujol, P

2012-07-06

We prove a "statistical transmutation" symmetry of doped quantum dimer models on the square, triangular, and kagome lattices: the energy spectrum is invariant under a simultaneous change of statistics (i.e., bosonic into fermionic or vice versa) of the holes and of the signs of all the dimer resonance loops. This exact transformation enables us to define the duality equivalence between doped quantum dimer Hamiltonians and provides the analytic framework to analyze dynamical statistical transmutations. We investigate numerically the doping of the triangular quantum dimer model with special focus on the topological Z(2) dimer liquid. Doping leads to four (instead of two for the square lattice) inequivalent families of Hamiltonians. Competition between phase separation, superfluidity, supersolidity, and fermionic phases is investigated in the four families.

Nanostructured TiO2/CH3NH3PbI3 heterojunction solar cells employing spiro-OMeTAD/Co-complex as hole-transporting material

KAUST Repository

Noh, Jun Hong

2013-01-01

For using 2,2′,7,7′-tetrakis(N,N′-di-p- methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) as a hole conductor in solar cells, it is necessary to improve its charge-transport properties through electrochemical doping. With the aim of fabricating efficient mesoscopic TiO2/CH3NH3PbI3 heterojunction solar cells, we used tris[2-(1H-pyrazol-1-yl)-4-tert- butylpyridine)cobalt(iii) tris(bis(trifluoromethylsulfonyl) imide)] (FK209) as a p-dopant for spiro-OMeTAD. The mixture of spiro-OMeTAD, FK209, lithium bis(trifluoromethylsulfonyl)imide (Li-TFSI), and 4-tert-butylpyridine (TBP) exhibited significantly higher performance than mixtures of pristine spiro-OMeTAD, spiro-OMeTAD, and FK209, and spiro-OMeTAD, Li-TFSI, and TBP. Such a synergistic effect between the Co-complex and Li-TFSI in conjunction with spiro-OMeTAD effectively improved the power conversion efficiency (PCE) of the fabricated solar cells. As a result, we achieved PCE of 10.4%, measured under standard solar conditions (AM 1.5G, 100 mW cm-2). © 2013 The Royal Society of Chemistry.

Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface.

Science.gov (United States)

Lee, M; Arras, R; Warot-Fonrose, B; Hungria, T; Lippmaa, M; Daimon, H; Casanove, M J

2017-11-01

The structure of Ir-doped LaAlO 3 /SrTiO 3 (001) interfaces was investigated on the atomic scale using probe-corrected transmission electron microscopy in high-angle annular dark-field scanning mode (HAADF-STEM) and electron energy loss spectroscopy (EELS), combined with first-principles calculations. We report the evolution of the strain state experimentally measured in a 5 unit-cell thick LaAlO 3 film as a function of the Ir concentration in the topmost SrTiO 3 layer. It is shown that the LaAlO 3 layers remain fully elastically strained up to 3% of Ir doping, whereas a higher doping level seems to promote strain relaxation through enhanced cationic interdiffusion. The observed differences between the energy loss near edge structure (ELNES) of Ti-L 2,3 and O-K edges at non-doped and Ir-doped interfaces are consistent with the location of the Ir dopants at the interface, up to 3% of Ir doping. These findings, supported by the results of density functional theory (DFT) calculations, provide strong evidence that the effect of dopant concentrations on the properties of this kind of interface should not be analyzed without obtaining essential information from the fine structural and chemical analysis of the grown structures.

Al2O3 doped TiO2 ceramic waste forms

International Nuclear Information System (INIS)

Uno, Masayoshi; Kinoshita, Hajime; Sakai, Etsuro; Ikeda, Akira; Matsumoto, Y.; Yamanaka, Shinsuke

1999-01-01

Melting of the mixture of Nd 2 O 3 , CeO 2 , SrO, TiO 2 and Al 2 O 3 at 1673 K for 1 hour produced one RE 2 Ti 3 O 9 phase compound. Differential Scanning Calorimetry (DSC) measurement showed that the melting temperature of this compound was 1646 K. Density of the alumina doped oxide was higher than that of the oxide obtained by the pressing and sintering without alumina. Vickers hardness of the oxide obtained by the pressing and sintering was 5.3 GPa and nearly same as that of glass waste. That of the alumina doped oxide was around 7 GPa. 7 days Soxhlet leach test (MCC-5) followed by Inductively Coupled Plasma Spectrometry (ICP) showed that normalized leaching rate of Ti for the oxide obtained by the pressing and sintering was 5.54 x 10 -3 kg/m 2 and that for the alumina doped oxide was 2.24 x 10 -3 kg/m 2 . The value of Sr for the pressed and sintered sample was 0.034 x 10 -3 kg/m 2 but that for alumina doped sample was below the detection limit (0.01 x 10 -3 kg/m 2 ). Al was not detected from the leachate of the alumina doped sample. (author)

Synthesis of pure and Sr-doped LaGaO{sub 3}, LaFeO{sub 3} and LaCoO{sub 3} and Sr,Mg-doped LaGaO{sub 3} for ITSOFC application using different wet chemical routes

Energy Technology Data Exchange (ETDEWEB)

Kumar, M. [National Metallurgical Laboratory-Madras Center, CSIR Madras Complex, Chennai 600113 (India); Srikanth, S. [National Metallurgical Laboratory-Madras Center, CSIR Madras Complex, Chennai 600113 (India)], E-mail: s_srikanth_99@yahoo.com; Ravikumar, B.; Alex, T.C.; Das, S.K. [National Metallurgical Laboratory, Jamshedpur 831007 (India)

2009-02-15

Pure and Sr-doped LaGaO{sub 3}, LaFeO{sub 3} and LaCoO{sub 3} and Sr,Mg-doped LaGaO{sub 3} were synthesized by various wet chemical routes, namely combustion, co-precipitation and citrate-gel methods. The effect of the various process parameters on the phase purity, particle size and surface area and morphology of the synthesized powders were determined by XRD, simultaneous TG-DTA, laser light scattering, BET and scanning electron microscopy. The stability of the synthesized pure phases in oxidizing and reducing atmosphere was also studied by thermogravimetry. It was observed that pure and Sr-doped single perovskite phases of lanthanum ferrite, cobaltite and gallate and Sr,Mg-doped lanthanum gallate could be synthesized by combustion and citrate-gel methods under suitable process conditions. Synthesis using the co-precipitation method yielded incomplete reaction irrespective of the calcination temperature adopted. The citrate-gel method yielded better powder properties in terms of particle size and morphology and surface area compared to combustion synthesis. It was found that pure and Sr-doped lanthanum ferrite, lanthanum cobaltite, lanthanum gallate and Sr,Mg-doped lanthanum gallate were stable in the oxidizing atmosphere. In the reducing atmosphere, pure and Sr-doped lanthanum ferrite and Sr,Mg-doped lanthanum gallate was found to be stable at least during the timeframe of the thermogravimetric experiment whereas pure and Sr-doped lanthanum cobaltite was partially reduced in hydrogen atmosphere.

Co-doping effects on luminescence and scintillation properties of Ce doped Lu3Al5O12 scintillator

International Nuclear Information System (INIS)

Kamada, Kei; Nikl, Martin; Kurosawa, Shunsuke; Beitlerova, Alena; Nagura, Aya; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2015-01-01

The Mg, Ca, Sr and Ba 200 ppm co-doped Ce:Lu 3 Al 5 O 12 single crystals were prepared by micro pulling down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of the co-doping. The scintillation decays were accelerated by both Mg and Ca co-dopants. The Mg co-doped samples showed the fastest decay and the highest light yield among the co-doped samples

Electronic structure of graphene nanoribbons doped with nitrogen atoms: a theoretical insight.

Science.gov (United States)

Torres, A E; Fomine, S

2015-04-28

The electronic structure of graphene nanoribbons doped with a graphitic type of nitrogen atoms has been studied using B3LYP, B2PLYP and CAS methods. In all but one case the restricted B3LYP solutions were unstable and the CAS calculations provided evidence for the multiconfigurational nature of the ground state with contributions from two dominant configurations. The relative stability of the doped nanoribbons depends mostly on the mutual position of the dopant atoms and notably less on the position of nitrogen atoms within the nanoribbon. N-graphitic doping affects cationic states much more than anionic ones due the participation of the nitrogen atoms in the stabilization of the positive charge, resulting in a drop in ionization energies (IPs) for N-graphitic doped systems. Nitrogen atoms do not participate in the negative charge stabilization of anionic species and, therefore, the doping does not affect the electron affinities (EAs). The unrestricted B3LYP method is the method of choice for the calculation of IPs and EAs. Restricted B3LYP and B2PLYP produces unreliable results for both IPs and EAs while CAS strongly underestimates the electron affinities. This is also true for the reorganization energies where restricted B3LYP produces qualitatively incorrect results. Doping changes the reorganization energy of the nanoribbons; the hole reorganization energy is generally higher than the corresponding electron reorganization energy due to the participation of nitrogen atoms in the stabilization of the positive charge.

Enhancing visible light photocatalytic and photocharge separation of (BiO){sub 2}CO{sub 3} plate via dramatic I{sup −} ions doping effect

Energy Technology Data Exchange (ETDEWEB)

Liang, Lei [College of Chemistry and Materials Science, Huaibei Normal University, Huaibei, 235000, Anhui (China); Cao, Jing [College of Chemistry and Materials Science, Huaibei Normal University, Huaibei, 235000, Anhui (China); Anhui Collaborative Innovation Center of Advanced Functional Composite, Huaibei, 235000, Anhui (China); Lin, Haili, E-mail: linhaili@mail.ipc.ac.cn [College of Chemistry and Materials Science, Huaibei Normal University, Huaibei, 235000, Anhui (China); Guo, Xiaomin; Zhang, Meiyu [College of Chemistry and Materials Science, Huaibei Normal University, Huaibei, 235000, Anhui (China); Chen, Shifu, E-mail: chshifu@chnu.edu.cn [College of Chemistry and Materials Science, Huaibei Normal University, Huaibei, 235000, Anhui (China); College of Chemistry and Materials Engineering, Anhui Science and Technology University, Fengyang, 233100, Anhui (China)

2016-08-15

Highlights: • Novel I-(BiO){sub 2}CO{sub 3} was prepared by a facile chemical precipitation method. • I{sup −} ions impurity level located on the top of valence band of (BiO){sub 2}CO{sub 3}. • I{sup −} ions doping largely improved photocatalytic activity of I-(BiO){sub 2}CO{sub 3}. • I-(BiO){sub 2}CO{sub 3} displayed excellent photocharge separation efficiency. - Abstract: Novel I{sup −} ions doped (BiO){sub 2}CO{sub 3} (I-(BiO){sub 2}CO{sub 3}) photocatalysts were successfully synthesized via a facile chemical precipitation method. Under visible light (λ > 400 nm), I-(BiO){sub 2}CO{sub 3} displayed much higher activity for rhodamine B and dichlorophenol degradation than the undoped (BiO){sub 2}CO{sub 3}. The pseudo-first-order rate constant k{sub app} of RhB degradation over 15.0% I-(BiO){sub 2}CO{sub 3} was 0.54 h{sup −1}, which is 11.3 times higher than that of (BiO){sub 2}CO{sub 3}. The doped I{sup −} ions formed an impurity level on the top of valence band of (BiO){sub 2}CO{sub 3} and induced much more visible light to be absorbed. The enhanced photocurrent and surface photovoltage properties were detected, which strongly ensures the efficient separation of electrons and holes in I-(BiO){sub 2}CO{sub 3} system under visible light. It provides a facile way to improve the photocatalytic activity of the wide-band-gap (BiO){sub 2}CO{sub 3} via intense doping effect of I{sup −} ions.

Measurements and characterization of a hole trap in neutron-irradiated silicon

International Nuclear Information System (INIS)

Avset, B.S.

1996-04-01

The report describes measurements on a hole trap in neutron irradiated silicon diodes made one high resistivity phosphorus doped floatzone silicon. The hole trap was detected by Deep Level Transient Spectroscopy. This measurement gave a trap activation energy of 0.475 MeV. Other measurements showed that the trap has very small capture cross sections for both holes and electrons (10 -18 to 10 -20 cm 2 ) and that the hole capture cross section is temperature dependent. The energy level position of the trap has been estimated to be between 0.25 and 0.29 eV from the valence band. 25 refs., 21 figs., 4 tabs

Photoluminescence properties of Li{sup +}-doped KNbO{sub 3}: Eu{sup 3+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Balakrishnaiah, R.; Kim, Dongwoo; Yi, Soungsoo; Kim, Sunghoon [Silla University, Busan (Korea, Republic of); Jang, Kiwan; Lee, Hosueb [Changwon National University, Changwon (Korea, Republic of); Moon, Byungkee; Jeong, Junghyun [Pukyong National University, Busan (Korea, Republic of)

2010-12-15

Different concentrations of Li{sup +}-ions doped KNbO{sub 3}:Eu polycrystalline powder phosphors were prepared by using the conventional solid state reaction method and were characterized by using X-ray diffraction, field emission scanning electron microscopy, and by using photoluminescence excitation and emission measurements. The morphological and the photoluminescence properties of the phosphors were effectively improved with Li-doping. The PL properties as a function of Li concentration in the Li-doped KNbO{sub 3}:Eu phosphors using different excitation wavelengths, along with a comparison of results with these in similar reported works, are discussed in the present work.

Self-doping processes between planes and chains in the metal-to-superconductor transition of YBa2Cu3O6.9.

Science.gov (United States)

Magnuson, M; Schmitt, T; Strocov, V N; Schlappa, J; Kalabukhov, A S; Duda, L-C

2014-11-12

The interplay between the quasi 1-dimensional CuO-chains and the 2-dimensional CuO2 planes of YBa(2)Cu(3)O(6+x) (YBCO) has been in focus for a long time. Although the CuO-chains are known to be important as charge reservoirs that enable superconductivity for a range of oxygen doping levels in YBCO, the understanding of the dynamics of its temperature-driven metal-superconductor transition (MST) remains a challenge. We present a combined study using x-ray absorption spectroscopy and resonant inelastic x-ray scattering (RIXS) revealing how a reconstruction of the apical O(4)-derived interplanar orbitals during the MST of optimally doped YBCO leads to substantial hole-transfer from the chains into the planes, i.e. self-doping. Our ionic model calculations show that localized divalent charge-transfer configurations are expected to be abundant in the chains of YBCO. While these indeed appear in the RIXS spectra from YBCO in the normal, metallic, state, they are largely suppressed in the superconducting state and, instead, signatures of Cu trivalent charge-transfer configurations in the planes become enhanced. In the quest for understanding the fundamental mechanism for high-Tc-superconductivity (HTSC) in perovskite cuprate materials, the observation of such an interplanar self-doping process in YBCO opens a unique novel channel for studying the dynamics of HTSC.

Exploring d{sup 0} magnetism in doped SnO{sub 2}–a first principles DFT study

Energy Technology Data Exchange (ETDEWEB)

Chakraborty, Brahmananda, E-mail: brahma@barc.gov.in; Ramaniah, Lavanya M.

2015-07-01

In search of d{sup 0} magnetism, the magnetic behavior of SnO{sub 2} with cation substitution from group1A (Li, Na, K) and group 2A (Be, Mg, Ca) elements has been systematically studied using Density Functional Theory (DFT). While an impurity from group 1A elements switches on ferromagnetism at a lower concentration itself, sufficient hole density is required for a group 2A impurity to create a spontaneous spin polarized ground state, a finding that has not been reported in earlier investigations. Our DFT results predict for the first time that impurities from group 2A (Mg, Ca) in SnO{sub 2} can promote room temperature ferromagnetism. Further, the emergence of ferromagnetism due to doping from group 1A elements, which injects three holes per defect, has been mapped successfully onto a modified Hubbard model from the literature. Doping of a single Na atom in the supercell (concentration 6.25 at%) makes the system ferromagnetic, with a magnetic moment close to 3.0 μ{sub B} per defect, and a Curie temperature of 815 K, obtained in the mean field approximation. This agrees closely with a model prediction of 750 K. Finally, the triggering of ferromagnetism by an impurity atom from group 2A, which adds two holes per defect in the system, implies that the prescription of three holes per defect given in the literature is not a necessary criterion for hole induced ferromagnetism. Rather, the analysis of the density of states and ferromagnetic coupling indicate that the system needs a critical hole concentration to activate ferromagnetism, by pushing the Fermi level inside the valence band in order to satisfy the Stoner criterion. - Graphical abstract: Spin density (Δρ=ρ↑−ρ↓) shown in yellow color mainly concentrated on the first shell O atoms around the impurity (a)Li, (b)Na, (c) K for isovalue 0.2e (d) K for isovalue 0.1. - Highlights: • Systematic study of d{sup 0} magnetism in SnO{sub 2} doped with group 1A (Li, Na, K) and group 2A (Be, Mg, Ca). �

Doping characteristics of Si-doped n-GaN Epilayers grown by low-pressure metal-organic chemical-vapor deposition

CERN Document Server

Noh, S K; Park, S E; Lee, I H; Choi, I H; Son, S J; Lim, K Y; Lee, H J

1998-01-01

We studied doping behaviors through analysis of the electronic properties of a series of undoped and Si-doped GaN epilayers grown on (0001) sapphire substrates by the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique. The doping efficiency was in the range of 0.4 - 0.8, and an empirical relation expressed as eta = 0.45 log[Si] - 8.1 was obtained. The temperature dependence of carrier concentration showed that the donor activation energy monotonically decreased from 17.6 meV to almost zero as the doping level increased. We suggest that the reduction in the activation energy is related not to autodoped defect centers but to doped Si donors and that the behavior originates from the formation of an impurity band. On the basis of an abrupt change in the compensation ratio from 0.9 to 0.5 by Si-doping, an exceptional difference in the Hall mobility between the undoped and the Si-doped films is explained by a mixed conduction mechanism of electrons and holes.

Doped spin ladders under magnetic field; Echelles de spins dopees sous champ magnetique

Energy Technology Data Exchange (ETDEWEB)

Roux, G

2007-07-15

This thesis deals with the physics of doped two-leg ladders which are a quasi one-dimensional and unconventional superconductor. We particularly focus on the properties under magnetic field. Models for strongly correlated electrons on ladders are studied using exact diagonalization and density-matrix renormalization group (DMRG). Results are also enlightened by using the bosonization technique. Taking into account a ring exchange it highlights the relation between the pairing of holes and the spin gap. Its influence on the dynamics of the magnetic fluctuations is also tackled. Afterwards, these excitations are probed by the magnetic field by coupling it to the spin degree of freedom of the electrons through Zeeman effect. We show the existence of doping-dependent magnetization plateaus and also the presence of an inhomogeneous superconducting phase (FFLO phase) associated with an exceeding of the Pauli limit. When a flux passes through the ladder, the magnetic field couples to the charge degree of freedom of the electrons via orbital effect. The diamagnetic response of the doped ladder probes the commensurate phases of the t-J model at low J/t. Algebraic transverse current fluctuations are also found once the field is turned on. Lastly, we report numerical evidences of a molecular superfluid phase in the 3/2-spin attractive Hubbard model: at a density low enough, bound states of four fermions, called quartets, acquire dominant superfluid fluctuations. The observed competition between the superfluid and density fluctuations is connected to the physics of doped ladders. (author)

Nanocrystal in Er3+-doped SiO2-ZrO2 Planar Waveguide with Yb3+ Sensitizer

International Nuclear Information System (INIS)

Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.

2010-01-01

Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .

Nitrogen-Doped Graphene/Platinum Counter Electrodes for Dye-Sensitized Solar Cells

KAUST Repository

Lin, Chinan

2014-12-17

Nitrogen-doped graphene (NGR) was utilized in dye-sensitized solar cells for energy harvesting. NGR on a Pt-sputtered fluorine-doped tin oxide substrate (NGR/Pt/FTO) as counter electrodes (CEs) achieves the high efficiency of 9.38% via the nitrogen doping into graphene. This is due to (i) the hole-cascading transport at the interface of electrolyte/CEs via controlling the valence band maximum of NGR located between the redox potential of the I-/I- redox couple and the Fermi level of Pt by nitrogen doping, (ii) the extended electron transfer surface effect provided by large-surface-area NGR, (iii) the high charge transfer efficiency due to superior catalytic characteristics of NGR via nitrogen doping, and (iv) the superior light-reflection effect of NGR/Pt/FTO CEs, facilitating the electron transfer from CEs to I3 - ions of the electrolyte and light absorption of dye. The result demonstrated that the NGR/Pt hybrid structure is promising in the catalysis field. (Chemical Presented). © 2014 American Chemical Society.

Photoluminescence study of Sm{sup 3+}–Yb{sup 3+}co-doped tellurite glass embedding silver nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Reza Dousti, M., E-mail: mrdousti@ifsc.usp.br [Laboratório de Espectroscopia de Materiais Funcionais (LEMAF), Instituto de Fisica de São Carlos, Universidade de São Paulo, Av. Trabalhador So-carlense 400, São Carlos, SP 13566-590 (Brazil); Department of Physics, Tehran-North Branch, Islamic Azad University Tehran (Iran, Islamic Republic of); Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Amjad, R.J. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Hosseinian S, R.; Salehi, M.; Sahar, M.R. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia)

2015-03-15

We report on the upconversion emission of Sm{sup 3+} ions doped tellurite glass in the presence of Yb{sup 3+} ions and silver nanoparticles. The enhancement of infrared-to-visible upconversion emissions is achieved under 980 nm excitation wavelength and attributed to the high absorption cross section of Yb{sup 3+} ions and an efficient energy transfer to Sm{sup 3+} ions. Further enhancements are attributed to the plasmonic effect via metallic nanoparticles resulting in the large localized field around rare earth ions. However, under excitation at 406 nm, the addition of Yb{sup 3+} content and heat-treated silver nanoparticles quench the luminescence of Sm{sup 3+} ions likely due to quantum cutting and plasmonic diluent effects, respectively. - Highlights: • Sm{sup 3+} tellurite glasses co-doped with Yb{sup 3+} ions and tri-doped with Yb{sup 3+}:Ag NPs were prepared. • In first step, Yb{sup 3+} ions enhanced the upconversion emissions of Sm{sup 3+} doped samples. • In second step, Ag NPs further enhanced the upconversion emissions in tri-doped glasses. • Finally, the quench in luminescence under 406 nm excitation is observed and discussed.

Spin-state crossover and low-temperature magnetic state in yttrium-doped Pr0.7Ca0.3CoO3

Science.gov (United States)

Knížek, K.; Hejtmánek, J.; Maryško, M.; Novák, P.; Šantavá, E.; Jirák, Z.; Naito, T.; Fujishiro, H.; de la Cruz, Clarina

2013-12-01

The structural and magnetic properties of two mixed-valence cobaltites with a formal population of 0.30 Co4+ ions per f.u., (Pr1-yYy)0.7Ca0.3CoO3 (y=0 and 0.15), have been studied down to very low temperatures by means of high-resolution neutron diffraction, SQUID magnetometry, and heat-capacity measurements. The results are interpreted within the scenario of the spin-state crossover from a room-temperature mixture of the intermediate-spin Co3+ and low-spin Co4+ (IS/LS) to the LS/LS mixture in the sample ground states. In contrast to the yttrium-free y=0 that retains the metallic-like character and exhibits ferromagnetic (FM) ordering below 55 K, the doped system y=0.15 undergoes a first-order metal-insulator transition at 132 K, during which not only the crossover to low-spin states but also a partial electron transfer from Pr3+ 4f to cobalt 3d states takes place simultaneously. Taking into account the nonmagnetic character of LS Co3+, such a valence shift electronic transition causes a magnetic dilution, formally to 0.12 LS Co4+ or 0.12 t2g hole spins per f.u., which is the reason for an insulating, highly nonuniform magnetic ground state without long-range order. Nevertheless, even in that case there exists a relatively strong molecular field distributed over all the crystal lattice. It is argued that the spontaneous FM order in y=0 and the existence of strong FM correlations in y=0.15 apparently contradict the single t2g band character of LS/LS phase. The explanation we suggest relies on a model of the defect-induced, itinerant hole-mediated magnetism, where the defects are identified with the magnetic high-spin Co3+ species stabilized near oxygen vacancies.

Conductivity study of nitrogen-doped calcium zinc oxide prepared by spray pyrolysis

International Nuclear Information System (INIS)

Hsu, Yu-Ting; Lan, Wen-How; Huang, Kai-Feng; Lin, Jia-Ching; Chang, Kuo-Jen

2016-01-01

In this study, the spray pyrolysis method was used to prepare unintentionally doped and nitrogen-doped calcium zinc oxide films by using zinc acetate, calcium nitrate precursor, and ammonium acetate precursor. Morphological and structural analyses were conducted using scanning electron microscopy and X-ray diffraction. The results indicated that film grain size decreased as the nitrogen doping was increased. Both calcium oxide and zinc oxide structures were identified in the unintentionally doped calcium zinc oxide. When nitrogen doping was introduced, the film mainly exhibited a zinc oxide structure with preferred (002) and (101) orientations. The concentration and mobility were investigated using a Hall measurement system. P-type films with a mobility and concentration of 10.6 cm"2 V"−"1 s"−"1 and 2.8×10"1"7 cm"−"3, respectively, were obtained. Moreover, according to a temperature-dependent conductivity analysis, an acceptor state with activation energy 0.266 eV dominated the p-type conduction for the unintentionally doped calcium zinc oxide. By contrast, a grain boundary with a barrier height of 0.274–0.292 eV dominated the hole conduction for the nitrogen-doped calcium zinc oxide films.

Photoluminescence and thermoluminescence properties of Tb3+ doped K3Gd(PO4)2 nanophosphor

International Nuclear Information System (INIS)

Gupta, Palvi; Bedyal, A.K.; Kumar, Vinay; Khajuria, Y.; Lochab, S.P.; Pitale, S.S.; Ntwaeaborwa, O.M.; Swart, H.C.

2014-01-01