Extremely high hole concentrations in c-plane GaN

Energy Technology Data Exchange (ETDEWEB)

Trybus, Elaissa; Moseley, Michael; Henderson, Walter; Billingsley, Daniel [Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Namkoong, Gon [Old Dominion University, Applied Research Center, Newport News, VA (United States); Look, David C. [Wright State University, Semiconductor Research Center, Dayton, OH (United States); Doolittle, W.A.

2009-06-15

Metal Modulated Epitaxy (S. D. Burnham et al., J. Appl. Phys. 104, 024902 (2008)[1]) is extended to include modulation of both the shutters of Ga and Mg, the Mg being delivered from a Veeco corrosive series valved cracker (S. D. Burnham et al., Mater. Res. Soc. Proc. 798, Y8.11 (2003)[2]). The Ga fluxes used are sufficiently large that droplets rapidly form when the Ga shutter opens and are subsequently depleted when the Ga shutter closes. The result is the ability to limit surface faceting while predominantly growing under average N-rich growth conditions and thus, possibly reduce N-vacancy defects. N-vacancy defects are known to result in compensation. This ability to grow higher quality materials under N-rich conditions results in very high hole concentrations and low resistivity p-type materials. Hole concentrations as high as 2 x 10{sup 19} cm{sup -3} have been achieved on c-plane GaN resulting in resistivities as low as 0.38 ohm-cm. The dependence on Ga flux, shutter timing, the corresponding RHEED images for each condition is detailed and clearly show minimization of faceting and crystal quality variations as determined by X-ray diffraction. Quantification of the Mg incorporation and residual impurities such as hydrogen, oxygen, and carbon by SIMS, eliminates co-doping, while temperature dependent hall measurements show reduced activation energies. X-ray diffraction data compares crystalline quality with hole concentration. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A hole modulator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

Science.gov (United States)

Kim, B. W.; Majerfeld, A.

1996-02-01

We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

A hole modulator for InGaN/GaN light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-01-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm 2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs

Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Swensen, James S.; Wang, Liang (Frank); Rainbolt, James E.; Koech, Phillip K.; Polikarpov, Evgueni; Gaspar, Daniel J.; Padmaperuma, Asanga B.

2012-12-01

We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.

Hole-capture properties of the electron-irradiation-induced deep-level H5 in p-type InP: A charge-controlled bistable model

International Nuclear Information System (INIS)

Bretagnon, T.; Bastide, G.; Rouzeyre, M.

1989-01-01

The electron-induced irradiated defect H 5 in Zn-doped p-type InP is an unusual hole trap, since its temperature-independent weak-hole capture cross section, σ c ∼10 -21 cm 2 , is 6 orders of magnitude lower than the value obtained from thermal-emission rates. We present a charge-controlled bistable configuration-coordinate diagram that explains this large difference and accounts for the optical-absorption properties. In addition, a microscopic D In n+ -Zn - defect, made by pairing under electrostatic attraction of the ionized acceptor Zn - and of a positively charged primitive defect D In n+ of the In sublattice, is tentatively proposed as a plausible complex at the origin of H 5

Hole states in diamond p-delta-doped field effect transistors

International Nuclear Information System (INIS)

Martinez-Orozco, J C; Rodriguez-Vargas, I; Mora-Ramos, M E

2009-01-01

The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

Hole states in diamond p-delta-doped field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Martinez-Orozco, J C; Rodriguez-Vargas, I [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina con Paseo la Bufa S/N, CP 98060 Zacatecas, ZAC. (Mexico); Mora-Ramos, M E, E-mail: jcmover@correo.unam.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, CP 62209 Cuernavaca, MOR. (Mexico)

2009-05-01

The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

International Nuclear Information System (INIS)

Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

2013-01-01

Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm 2 V −1 s −1 and a hole concentration of 1.67 × 10 17  cm −3 , respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application

P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

International Nuclear Information System (INIS)

Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa

1989-01-01

Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm -3 , the hole mobility is ∼8 cm 2 /V·s and the resistivity is ∼35Ω· cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature. (author)

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

International Nuclear Information System (INIS)

Burnham, Shawn D.; Doolittle, W. Alan; Namkoong, Gon; Look, David C.; Clafin, Bruce

2008-01-01

The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7x10 20 cm -3 , leading to a hole concentration as high as 4.5x10 18 cm -3 at room temperature, with a mobility of 1.1 cm 2 V -1 s -1 and a resistivity of 1.3 Ω cm. At 580 K, the corresponding values were 2.6x10 19 cm -3 , 1.2 cm 2 V -1 s -1 , and 0.21 Ω cm, respectively. Even under strong white light, the sample remained p-type with little change in the electrical parameters

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

Science.gov (United States)

Burnham, Shawn D.; Namkoong, Gon; Look, David C.; Clafin, Bruce; Doolittle, W. Alan

2008-07-01

The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7×1020cm-3, leading to a hole concentration as high as 4.5×1018cm-3 at room temperature, with a mobility of 1.1cm2V-1s-1 and a resistivity of 1.3Ωcm. At 580K, the corresponding values were 2.6×1019cm-3, 1.2cm2V-1s-1, and 0.21Ωcm, respectively. Even under strong white light, the sample remained p-type with little change in the electrical parameters.

Diffusion of ion-implanted B in high concentration P- and As-doped silicon

International Nuclear Information System (INIS)

Fair, R.B.; Pappas, P.N.

1975-01-01

The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As was studied by correlating numerical profile calculations with profiles determined by secondary-ion mass spectrometry (SIMS). Retarded B diffusion is observed in both As- and P-doped Si, consistent with the effect of the local Fermi-level position in the Si band gap on B diffusivity, D/sub B/. It is shown that D/sub B/ is linearly dependent on the free hole concentration, p, over the range 0.1 less than p/n/sub ie/ less than 30, where n/sub ie/ is the effective intrinsic electron concentration. This result does not depend on the way in which the background dopant has been introduced (implantation predeposition or doped-oxide source), nor the type of dopant used (P or As). (U.S.)

Luminescence behavior and compensation effect on the hole concentration in the sol–gel Zn{sub 1−x}Cu{sub x}S{sub y} films with different compositions

Energy Technology Data Exchange (ETDEWEB)

Ni, Wei-Shih [Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China); Lin, Yow-Jon, E-mail: rzr2390@yahoo.com.tw [Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China); Chang, Hsing-Cheng [Department of Automatic Control Engineering, Feng Chia University, Taichung 407, Taiwan (China); Liu, Chia-Jyi; Chen, Liang-Ru [Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China)

2015-12-15

This study determines the effect of Cu and S content on the structural, luminescence and electrical properties of sol–gel Zn{sub 1−x}Cu{sub x}S{sub y} films. The dependence of acceptors [interstitial sulfur (S{sub i})] and donors [sulfur vacancy (V{sub S})] on the film composition allows the hole concentration of Zn{sub 1−x}Cu{sub x}S{sub y} samples to be tuned. It is found that an increased Cu/Zn molar ratio leads to a reduced probability of the formation of V{sub S}, which increases the hole concentration. An increase in Cu/Zn and S/Zn molar ratios leads to a significantly increased probability of the formation of S{sub i} and a reduced probability of the formation of V{sub S}, which significantly increases the hole concentration. Clearly, compensation effects limit the hole concentration of Zn{sub 1−x}Cu{sub x}S{sub y} samples. The results show that S{sub i} is the origin of the p-type conductivity. It is also shown that a suitable choice of composition increases acceptor-like defect formation in Zn{sub 1−x}Cu{sub x}S{sub y}. - Highlights: • The effect of the composition on the hole concentration of Zn{sub 1−x}Cu{sub x}S{sub y} is studied. • A dependence of the optical property upon the film composition is found. • Compensation effects limit the hole concentration of Zn{sub 1−x}Cu{sub x}S{sub y} samples. • Interstitial sulfur is the origin of the p-type conductivity of Zn{sub 1−x}Cu{sub x}S{sub y}. • A suitable choice of the compositions promotes the formation of acceptors.

Undoped p-type GaN1-xSbx alloys: Effects of annealing

Science.gov (United States)

Segercrantz, N.; Baumgartner, Y.; Ting, M.; Yu, K. M.; Mao, S. S.; Sarney, W. L.; Svensson, S. P.; Walukiewicz, W.

2016-12-01

We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

Relationships between hole type penetrameter sensitivities and wire type penetrameter sensitivities

International Nuclear Information System (INIS)

Iwahashi, Y.; Ebata, M.; Ooka, K.; Hirayama, K.; Senda, T.

1985-01-01

Radiographic investigations were conducted using the two types of penetrameters (hole and wire types) to obtain the relationships between hole type penetrameter sensitivities and wire type penetrameter sensitivities. Furthermore, the effects of radiation sources and kinds of X-ray films on the relationships were investigated. As a result, the quantitative relationship were defined. It was also clarified that the kinds of X-ray films and radiation sources have a relatively little effect on the relationship

Deep levels in p-type InGaAsN lattice matched to GaAs

International Nuclear Information System (INIS)

Kwon, D.; Kaplar, R.J.; Ringel, S.A.; Allerman, A.A.; Kurtz, S.R.; Jones, E.D.

1999-01-01

Deep-level transient spectroscopy measurements were utilized to investigate deep-level defects in metal - organic chemical vapor deposition-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the band gap, with a dominant hole trap at E v +0.10eV. Postgrowth annealing simplified the deep-level spectra, enabling the identification of three distinct hole traps at 0.10, 0.23, and 0.48 eV above the valence-band edge, with concentrations of 3.5x10 14 , 3.8x10 14 , and 8.2x10 14 cm -3 , respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4x10 14 cm -3 in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority-carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future. copyright 1999 American Institute of Physics

Effect of Electrical Discharge Machining on Stress Concentration in Titanium Alloy Holes.

Science.gov (United States)

Hsu, Wei-Hsuan; Chien, Wan-Ting

2016-11-24

Titanium alloys have several advantages, such as a high strength-to-weight ratio. However, the machinability of titanium alloys is not as good as its mechanical properties. Many machining processes have been used to fabricate titanium alloys. Among these machining processes, electrical discharge machining (EDM) has the advantage of processing efficiency. EDM is based on thermoelectric energy between a workpiece and an electrode. A pulse discharge occurs in a small gap between the workpiece and electrode. Then, the material from the workpiece is removed through melting and vaporization. However, defects such as cracks and notches are often detected at the boundary of holes fabricated using EDM and the irregular profile of EDM holes reduces product quality. In this study, an innovative method was proposed to estimate the effect of EDM parameters on the surface quality of the holes. The method combining the finite element method and image processing can rapidly evaluate the stress concentration factor of a workpiece. The stress concentration factor was assumed as an index of EDM process performance for estimating the surface quality of EDM holes. In EDM manufacturing processes, Ti-6Al-4V was used as an experimental material and, as process parameters, pulse current and pulse on-time were taken into account. The results showed that finite element simulations can effectively analyze stress concentration in EDM holes. Using high energy during EDM leads to poor hole quality, and the stress concentration factor of a workpiece is correlated to hole quality. The maximum stress concentration factor for an EDM hole was more than four times that for the same diameter of the undamaged hole.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Science.gov (United States)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Science.gov (United States)

Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Existence of black holes due to concentration of angular momentum

Energy Technology Data Exchange (ETDEWEB)

Khuri, Marcus A. [Department of Mathematics, Stony Brook University,Stony Brook, NY 11794 (United States)

2015-06-29

We present a general sufficient condition for the formation of black holes due to concentration of angular momentum. This is expressed in the form of a universal inequality, relating the size and angular momentum of bodies, and is proven in the context of axisymmetric initial data sets for the Einstein equations which satisfy an appropriate energy condition. A brief comparison is also made with more traditional black hole existence criteria based on concentration of mass.

Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode.

Science.gov (United States)

Su, Chia-Ying; Lin, Chun-Han; Yao, Yu-Feng; Liu, Wei-Heng; Su, Ming-Yen; Chiang, Hsin-Chun; Tsai, Meng-Che; Tu, Charng-Gan; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, C C

2017-09-04

The high performance of a light-emitting diode (LED) with the total p-type thickness as small as 38 nm is demonstrated. By increasing the Mg doping concentration in the p-AlGaN electron blocking layer through an Mg pre-flow process, the hole injection efficiency can be significantly enhanced. Based on this technique, the high LED performance can be maintained when the p-type layer thickness is significantly reduced. Then, the surface plasmon coupling effects, including the enhancement of internal quantum efficiency, increase in output intensity, reduction of efficiency droop, and increase of modulation bandwidth, among the thin p-type LED samples of different p-type thicknesses that are compared. These advantageous effects are stronger as the p-type layer becomes thinner. However, the dependencies of these effects on p-type layer thickness are different. With a circular mesa size of 10 μm in radius, through surface plasmon coupling, we achieve the record-high modulation bandwidth of 625.6 MHz among c-plane GaN-based LEDs.

Two types of fundamental luminescence of ionization-passive electrons and holes in optical dielectrics—Intraband-electron and interband-hole luminescence (theoretical calculation and comparison with experiment)

Science.gov (United States)

Vaisburd, D. I.; Kharitonova, S. V.

1997-11-01

A short high-power pulse of ionizing radiation creates a high concentration of nonequilibrium electrons and holes in a dielectric. They quickly lose their energy, generating a multiplicity of secondary quasiparticles: electron—hole pairs, excitons, plasmons, phonons of all types, and others. When the kinetic energy of an electron becomes less that some value EΔ≈(1.3-2)Eg it loses the ability to perform collisional ionization and electron excitations of the dielectric medium. Such an electron is said to be ionization-passive. It relaxes to the bottom of the lower conduction band by emitting phonons. Similarly a hole becomes ionization-passive when it “floats up” above some level EH and loses the ability for Auger ionization of the dielectric medium. It continues to float upward to the ceiling of the upper valance band only by emitting phonons. The concentrations of ionization-passive electrons and holes are larger by several orders of magnitude than those of the active electrons and holes and consequently make of a far larger contribution to many kinetic processes such as luminescence. Intraband and interband quantum transitions make the greatest contribution to the fundamental (independent of impurities and intrinsic defects) electromagnetic radiation of ionization-passive electrons and holes. Consequently the brightest types of purely fundamental luminescence of strongly nonequilibrium electrons and holes are intraband and interband luminescence. These forms of luminescence, discovered relatively recently, carry valuable information on the high-energy states of the electrons in the conduction band and of the holes in the valence band of a dielectric. Experimental investigations of these types of luminescence were made, mainly on alkali halide crystals which were excited by nanoseconal pulses of high-current-density electrons and by two-photon absorption of the ultraviolet harmonics of pulsed laser radiation beams of nanosecond and picosecond duration. The

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Science.gov (United States)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Energy Technology Data Exchange (ETDEWEB)

Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Hole transport and photoluminescence in Mg-doped InN

Energy Technology Data Exchange (ETDEWEB)

Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

2010-03-24

Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Energy Technology Data Exchange (ETDEWEB)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2015-01-28

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

International Nuclear Information System (INIS)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10 19 cm −3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10 20 cm −3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10 19 cm −3 . The p-GaN and p-Al 0.11 Ga 0.89 N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K

Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

Science.gov (United States)

Rahul, K. Suseel; Souparnika, C.; Salini, K.; Mathew, Vincent

2016-05-01

In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

Energy Technology Data Exchange (ETDEWEB)

Rahul, K. Suseel [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India); Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Souparnika, C. [Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India)

2016-05-06

In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

Science.gov (United States)

Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

2016-12-01

Single-crystalline ZnO films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 120 keV N and 130 keV O ions at 460 °C. Hall measurements show that the dually-implanted single-crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 2.1 × 1018-1.1 × 1019 cm-3, hole mobilities between 1.6 and 1.9 cm2 V-1 s-1, and resistivities in the range of 0.353-1.555 Ω cm. The ZnO films exhibit (002) (c-plane) orientation as identified by the X-ray diffraction pattern. It is confirmed that N ions were effectively implanted by SIMS results. Raman spectra, polarized Raman spectra, and X-ray photoelectron spectroscopy results reflect that the concentration of oxygen vacancies is reduced, which is attributed to O ion implantation. It is concluded that N and O implantation and dynamic annealing play a critical role in forming p-type single-crystalline ZnO films.

Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

Science.gov (United States)

Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

2018-03-01

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

Science.gov (United States)

Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

2017-01-01

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

Hot Hole Collection and Photoelectrochemical CO2 Reduction with Plasmonic Au/p-GaN Photocathodes.

Science.gov (United States)

DuChene, Joseph S; Tagliabue, Giulia; Welch, Alex J; Cheng, Wen-Hui; Atwater, Harry A

2018-04-11

Harvesting nonequilibrium hot carriers from plasmonic-metal nanostructures offers unique opportunities for driving photochemical reactions at the nanoscale. Despite numerous examples of hot electron-driven processes, the realization of plasmonic systems capable of harvesting hot holes from metal nanostructures has eluded the nascent field of plasmonic photocatalysis. Here, we fabricate gold/p-type gallium nitride (Au/p-GaN) Schottky junctions tailored for photoelectrochemical studies of plasmon-induced hot-hole capture and conversion. Despite the presence of an interfacial Schottky barrier to hot-hole injection of more than 1 eV across the Au/p-GaN heterojunction, plasmonic Au/p-GaN photocathodes exhibit photoelectrochemical properties consistent with the injection of hot holes from Au nanoparticles into p-GaN upon plasmon excitation. The photocurrent action spectrum of the plasmonic photocathodes faithfully follows the surface plasmon resonance absorption spectrum of the Au nanoparticles and open-circuit voltage studies demonstrate a sustained photovoltage during plasmon excitation. Comparison with Ohmic Au/p-NiO heterojunctions confirms that the vast majority of hot holes generated via interband transitions in Au are sufficiently hot to inject above the 1.1 eV interfacial Schottky barrier at the Au/p-GaN heterojunction. We further investigated plasmon-driven photoelectrochemical CO 2 reduction with the Au/p-GaN photocathodes and observed improved selectivity for CO production over H 2 evolution in aqueous electrolytes. Taken together, our results offer experimental validation of photoexcited hot holes more than 1 eV below the Au Fermi level and demonstrate a photoelectrochemical platform for harvesting hot carriers to drive solar-to-fuel energy conversion.

Electrical properties of n-type and p-type InP grown by the synthesis, solute diffusion technique

International Nuclear Information System (INIS)

Siegel, W.; Kuehnel, G.; Koi, H.; Gerlach, W.

1986-01-01

Undoped n-InP and Zn-doped p-InP are grown by the SSD method. Hall measurements on wafers cut from the polycrystalline n-InP ingots give values between 10 15 and 10 16 cm -3 for the carrier concentration averaged over the crystallites of the wafer. From the electron mobilities measured at 77 K on single crystalline samples (maximally 5.0 x 10 4 cm 2 /Vs) it can be concluded on the high purity and perfection of this material. Zn doping yields p-InP with p = (3 to 4) x 10 16 cm -3 and μ = (113 to 140) cm 2 /Vs at room temperature. The hole mobilities at 77 K (1700 to 2160 cm 2 /Vs) are the highest ones reported for InP up to now. By fitting of the p(T) curves between 30 and 500 K concentrations and activation energies for the shallow acceptor Zn and for a medium deep acceptor present beside Zn are determined. (author)

DFT+U study of self-trapping, trapping, and mobility of oxygen-type hole polarons in barium stannate

Science.gov (United States)

Geneste, Grégory; Amadon, Bernard; Torrent, Marc; Dezanneau, Guilhem

2017-10-01

The charge-transfer insulating perovskite oxides currently used as fuel cell electrolytes undergo, at high temperature, an oxidation reaction 1/2 O2(g ) +VO••→OOX+2 h• , that produces oxygen-type holes. Understanding the nature and mobility of these oxygen-type holes is an important step to improve the performance of devices, but presents a theoretical challenge since, in their localized form, they cannot be captured by standard density functional theory. Here, we employ the DFT+U formalism with a Hubbard correction on the p orbitals of oxygen to investigate several properties of these holes, in the particular case of BaSnO3. We describe the small oxygen-type hole polarons, the self-trapping at their origin, and their trapping by trivalent dopants (Ga, Sc, In, Lu, Y, Gd, La). Strong similarities with protonic defects are observed concerning the evolution of the trapping energy with ionic radius of the dopant. Moreover, we show that long-range diffusion of holes is a complex phenomenon, that proceeds by a succession of several mechanisms. However, the standard implementation of DFT+U within the projector augmented-wave (PAW) formalism leads to use very large, unphysical values of U for the O-p orbital. We propose here a slightly modified DFT+U scheme, that takes into account the fact that the O-p is truncated in usual DFT+U implementation in PAW. This scheme yields more physical values of U than the ones traditionally used in the literature, and describes well the properties of the hole polaron.

Black holes and groups of type 7

Indian Academy of Sciences (India)

Supergravity; groups of type 7; black holes; quantum field theory. ... representation are reviewed, along with a connection between special Kähler geometry and a 'generalization' of groups of type 7. ... Pramana – Journal of Physics | News.

Discovering a Defect that Imposes a Limit to Mg Doping in p-Type GaN

International Nuclear Information System (INIS)

Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; O'Keefe, M.A.

2006-01-01

Gallium nitride (GaN) is the III-V semiconductor used to produce blue light-emitting diodes (LEDs) and blue and ultraviolet solid-state lasers. To be useful in electronic devices, GaN must be doped with elements that function either as electron donors or as acceptors to turn it into either an n-type semiconductor or a p-type semiconductor. It has been found that GaN can easily be grown with n-conductivity, even up to large concentrations of donors--in the few 10 19 cm -3 range. However, p-doping, the doping of the structure with atoms that provide electron sinks or holes, is not well understood and remains extremely difficult. The only efficient p-type dopant is Mg, but it is found that the free hole concentration is limited to 2 x 10 18 cm -3 , even when Mg concentrations are pushed into the low 10 19 cm -3 range. This saturation effect could place a limit on further development of GaN based devices. Further increase of the Mg concentration, up to 1 x 10 20 cm -3 leads to a decrease of the free hole concentration and an increase in defects. While low- to medium-brightness GaN light-emitting diodes (LEDs) are remarkably tolerant of crystal defects, blue and UV GaN lasers are much less so. We used electron microscopy to investigate Mg doping in GaN. Our transmission electron microscopy (TEM) studies revealed the formation of different types of Mg-rich defects [1,2]. In particular, high-resolution TEM allowed us to characterize a completely new type of defect in Mg-rich GaN. We found that the type of defect depended strongly on crystal growth polarity. For crystals grown with N-polarity, planar defects are distributed at equal distances (20 unit cells of GaN); these defects can be described as inversion domains [1]. For growth with Ga-polarity, we found a different type of defect [2]. These defects turn out to be three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and their six walls formed on {1123} planes (Fig. 1a). In

Black p-branes versus black holes in non-asymptotically flat Einstein-Yang-Mills theory

Science.gov (United States)

Habib Mazharimousavi, S.; Halilsoy, M.

2016-09-01

We present a class of non-asymptotically flat (NAF) charged black p-branes (BpB) with p-compact dimensions in higher-dimensional Einstein-Yang-Mills theory. Asymptotically the NAF structure manifests itself as an anti-de sitter spacetime. We determine the total mass/energy enclosed in a thin shell located outside the event horizon. By comparing the entropies of BpB with those of black holes in the same dimensions we derive transition criteria between the two types of black objects. Given certain conditions satisfied, our analysis shows that BpB can be considered excited states of black holes. An event horizon r+ versus charge square Q2 plot for the BpB reveals such a transition where r+ is related to the horizon radius rh of the black hole (BH) both with the common charge Q.

Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

Energy Technology Data Exchange (ETDEWEB)

Dib, E., E-mail: elias.dib@for.unipi.it [Dipartimento di Ingegneria dell' Informazione, Università di Pisa, 56122 Pisa (Italy); Carrillo-Nuñez, H. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland); Cavassilas, N.; Bescond, M. [IM2NP, UMR CNRS 6242, Bât. IRPHE, Technopôle de Château-Gombert, 13384 Marseille Cedex 13 (France)

2016-01-28

Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas hole-phonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations.

Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

International Nuclear Information System (INIS)

Dib, E.; Carrillo-Nuñez, H.; Cavassilas, N.; Bescond, M.

2016-01-01

Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas hole-phonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations

P-type single-crystalline ZnO films obtained by (Na,N) dual implantation through dynamic annealing process

Science.gov (United States)

Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

2018-02-01

Single-crystalline ZnO films were grown by plasma-assisted molecular beam epitaxy technique on c-plane sapphire substrates. The films have been implanted with fixed fluence of 130 keV Na and 90 keV N ions at 460 °C. It is observed that dually-implanted single crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 1.24 × 1016-1.34 × 1017 cm-3, hole mobilities between 0.65 and 8.37 cm2 V-1 s-1, and resistivities in the range of 53.3-80.7 Ω cm by Hall-effect measurements. There are no other secondary phase appearing, with (0 0 2) (c-plane) orientation after ion implantation as identified by the X-ray diffraction pattern. It is obtained that Na and N ions were successfully implanted and activated as acceptors measured by XPS and SIMS results. Also compared to other similar studies, lower amount of Na and N ions make p-type characteristics excellent as others deposited by traditional techniques. It is concluded that Na and N ion implantation and dynamic annealing are essential in forming p-type single-crystalline ZnO films.

Mg doped InN and confirmation of free holes in InN

International Nuclear Information System (INIS)

Wang, K.; Yamaguchi, T.; Miller, N.; Mayer, M. A.; Haller, E. E.; Iwamoto, R.; Araki, T.; Nanishi, Y.; Yu, K. M.; Walukiewicz, W.; Ager, J. W. III

2011-01-01

We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type 'window' the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted.

Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

Energy Technology Data Exchange (ETDEWEB)

Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

2006-09-21

Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

Preliminary analysis of geophysical logs from drill hole UE-25p No. 1, Yucca Mountain, Nye County, Nevada

International Nuclear Information System (INIS)

Muller, D.C.; Kibler, J.E.

1984-01-01

Geophysical logs from drill hole UE-25p No. 1 correlate well with logs through the same geologic units from other drill holes at Yucca Mountain, Nevada. The in-situ physical properties of the rocks as determined from well logs are consistent with laboratory-measured physical properties of core from other drill holes. The density, neutron and caliper logs are very spiky through most of the Topopah Spring Member. This spikiness occurs on the same logs in cored holes where the Topopah Spring Member is highly fractured and lithophysal. The uranium channel of the spectral gamma-ray log through the Topopah Spring Member correlates with uranium logs from cored holes where most of the fractures have not been healed or filled with materials that concentrate uranium. Therefore, fracture porosity and permeability of the Topopah Spring Member are expected to be high and consistent with fracture analysis from other drill holes on Yucca Mountain, and hydrologic tests from well J-13. The Paleozoic dolomites which underlie the Tertiary tuffs are intensely brecciated, and the uranium count rate is much higher than normal for dolomites because uranium has been concentrated in the recementing material. 19 references, 1 figure, 2 tables

P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

Science.gov (United States)

Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

2017-09-01

The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

Subband structure comparison between n- and p- type double delta-doped Ga As quantum wells

International Nuclear Information System (INIS)

Rodriguez V, I.; Gaggero S, L.M.

2004-01-01

We compute the electron level structure (n-type) and the hole subband structure (p-type) of double -doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in p-type DDD quantum wells than in n-type DDD Also our results agree with the experimental data available. (Author) 33 refs., 2 tabs., 5 figs

Synthesis of p-type GaN nanowires.

Science.gov (United States)

Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

2013-09-21

GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

Prospects and limitations for p-type doping in boron nitride polymorphs

Science.gov (United States)

Weston, Leigh; van de Walle, Chris G.

Using first-principles calculations, we examine the potential for p-type doping of BN polymorphs via substitutional impurities. Based on density functional theory with a hybrid functional, our calculations reveal that group-IV elements (C, Si) substituting at the N site result in acceptor levels that are more than 1 eV above the valence-band maximum in all of the BN polymorphs, and hence far too deep to allow for p-type doping. On the other hand, group-II elements (Be, Mg) substituting at the B site lead to shallower acceptor levels. However, for the ground-state hexagonal phase (h-BN), we show that p-type doping at the B site is inhibited by the formation of hole polarons. Our calculations reveal that hole localization is intrinsic to sp2 bonded h-BN, and this places fundamental limits on hole conduction in this material. In contrast, the sp3 bonded wurtzite (w-BN) and cubic (c-BN) polymorphs are capable of forming shallow acceptor levels. For Be dopants, the acceptor ionization energies are 0.31 eV and 0.24 eV for w-BN and c-BN, respectively; these values are only slightly larger than the ionization energy of the Mg acceptor in GaN. This work was supported by NSF.

Electronic processes in uniaxially stressed p-type germanium

Energy Technology Data Exchange (ETDEWEB)

Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

1996-02-01

Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

KAUST Repository

Bianchi Granato, Danilo

2012-01-01

that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

KAUST Repository

Douglas, Jessica D.

2014-05-12

Solution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices to display high open-circuit voltages (>0.85 V) and generate significant charge carriers through hole transfer in addition to the electron-transfer pathway, which is common in fullerene-based devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Studies of defects in neutron-irradiated p-type silicon by admittance measurements of n+-p diodes

International Nuclear Information System (INIS)

Tokuda, Y.; Usami, A.

1978-01-01

Defects introduced in p-type silicon by neutron irradiation were studied by measuring the admittance of n + -p diodes. It was shown that the energy levels and capture cross sections estimated from the temperature dependence of the admittance had some uncertainty due to the temperature dependence of the concentration of free carriers in the bulk and the high-frequency-junction capacitance. So, we presented the method of determination of the energy levels, capture cross sections, and concentrations of defects from the frequency dependence of the admittance. This method consists of the measurements of G/ω and C as a function of frequency. From this method, assuming that capture cross sections are independent of temperature, the energy levels of E/sub v/+0.16 and E/sub v/+0.36 eV were obtained. For these defects, the calculated values of the hole capture cross section were 2.4 x 10 -14 and 3.7 x 10 -14 cm 2 , respectively. Comparing with other published data, the energy level of E/sub v/+0.36 eV was found to be correlated with the divacancy

Preparation of p-type transparent conducting tin-antimony oxide thin films by DC reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Ji, Zhenguo [College of Electronic Information, Hangzhou Dianzi University, Hangzhou (China); State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China); Xi, Junhua; Huo, Lijuan; Zhao, Yi [State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China)

2008-07-01

P-type transparent conducting tin-antimony oxide (TAO) films were successfully prepared by DC reactive magnetron sputtering followed by post annealing in the air. Structural, optical and electrical properties of the TAO films were investigated. X-ray diffraction studies showed that the films are polycrystalline with orthorhombic structure of Sb{sub 2}O{sub 4}. UV-Visible absorption and transmittance spectra showed that the optical band-gap of the TAO films is about 3.90 eV, and the overall transmittance is higher than 85% in the visible region. Hall effect measurement indicated that the Sn/Sb ratio is a critical parameter to get p-type conducting TAO films. It was found that 0.19p-type TAO films could be obtained. Hole concentration as high as 4.03 x 10{sup 19} cm{sup -3} and electrical resistivity as low as 0.155 {omega}cm were achieved, showing potential applications of TAO films as p-type transparent conducting films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A hole accelerator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Geology of drill hole UE25p No. 1: A test hole into pre-Tertiary rocks near Yucca Mountain, southern Nevada

International Nuclear Information System (INIS)

Carr, M.D.; Waddell, S.J.; Vick, G.S.; Stock, J.M.; Monsen, S.A.; Harris, A.G.; Cork, B.W.; Byers, F.M. Jr.

1986-01-01

Yucca Mountain in southern Nye County, Nevada, has been proposed as a potential site for the underground disposal of high-level nuclear waste. An exploratory drill hole designated UE25p No. 1 was drilled 3 km east of the proposed repository site to investigate the geology and hydrology of the rocks that underlie the Tertiary volcanic and sedimentary rock sequence forming Yucca Mountain. Silurian dolomite assigned to the Roberts Mountain and Lone Mountain Formations was intersected below the Tertiary section between a depth of approximately 1244 m (4080 ft) and the bottom of the drill hole at 1807 m (5923 ft). These formations are part of an important regional carbonate aquifer in the deep ground-water system. Tertiary units deeper than 1139 m (3733 ft) in drill hole UE25p No. 1 are stratigraphically older than any units previously penetrated by drill holes at Yucca Mountain. These units are, in ascending order, the tuff of Yucca Flat, an unnamed calcified ash-flow tuff, and a sequence of clastic deposits. The upper part of the Tertiary sequence in drill hole UE25p No. 1 is similar to that found in other drill holes at Yucca Mountain. The Tertiary sequence is in fault contact with the Silurian rocks. This fault between Tertiary and Paleozoic rocks may correlate with the Fran Ridge fault, a steeply westward-dipping fault exposed approximately 0.5 km east of the drill hole. Another fault intersects UE25p No. 1 at 873 m (2863 ft), but its surface trace is concealed beneath the valley west of the Fran Ridge fault. The Paintbrush Canyon fault, the trace of which passes less than 100 m (330 ft) east of the drilling site, intersects drill hole UE25p No. 1 at a depth of approximately 78 m (255 ft). The drill hole apparently intersected the west flank of a structural high of pre-Tertiary rocks, near the eastern edge of the Crater Flat structural depression

Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

International Nuclear Information System (INIS)

Fan, J. C.; Zhu, C. Y.; Fung, S.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Skorupa, W.; Anwand, W.

2009-01-01

As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400 deg. C, the films changed from n type to p type. Hole concentration and mobility of ∼6x10 17 cm -3 and ∼6 cm 2 V -1 s -1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As Zn -2V Zn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

Science.gov (United States)

Fan, J. C.; Zhu, C. Y.; Fung, S.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Anwand, W.; Skorupa, W.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.

2009-10-01

As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ˜400 °C, the films changed from n type to p type. Hole concentration and mobility of ˜6×1017 cm-3 and ˜6 cm2 V-1 s-1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the AsZn-2VZn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

A Be-type star with a black-hole companion.

Science.gov (United States)

Casares, J; Negueruela, I; Ribó, M; Ribas, I; Paredes, J M; Herrero, A; Simón-Díaz, S

2014-01-16

Stellar-mass black holes have all been discovered through X-ray emission, which arises from the accretion of gas from their binary companions (this gas is either stripped from low-mass stars or supplied as winds from massive ones). Binary evolution models also predict the existence of black holes accreting from the equatorial envelope of rapidly spinning Be-type stars (stars of the Be type are hot blue irregular variables showing characteristic spectral emission lines of hydrogen). Of the approximately 80 Be X-ray binaries known in the Galaxy, however, only pulsating neutron stars have been found as companions. A black hole was formally allowed as a solution for the companion to the Be star MWC 656 (ref. 5; also known as HD 215227), although that conclusion was based on a single radial velocity curve of the Be star, a mistaken spectral classification and rough estimates of the inclination angle. Here we report observations of an accretion disk line mirroring the orbit of MWC 656. This, together with an improved radial velocity curve of the Be star through fitting sharp Fe II profiles from the equatorial disk, and a refined Be classification (to that of a B1.5-B2 III star), indicates that a black hole of 3.8 to 6.9 solar masses orbits MWC 656, the candidate counterpart of the γ-ray source AGL J2241+4454 (refs 5, 6). The black hole is X-ray quiescent and fed by a radiatively inefficient accretion flow giving a luminosity less than 1.6 × 10(-7) times the Eddington luminosity. This implies that Be binaries with black-hole companions are difficult to detect in conventional X-ray surveys.

Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

International Nuclear Information System (INIS)

Rodriguez-Vargas, I; Madrigal-Melchor, J; Vlaev, S J

2009-01-01

We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp 3 s' tight-binding approximation including spin for the hole level structure analysis. The parameters of the tight-binding hamiltonian were taken from Klimeck et al. [Klimeck G, Bowen R C, Boykin T B, Salazar-Lazaro C, Cwik T A and Stoica A 2000 Superlattice. Microst. 27 77], first neighbors parameters that give realiable results for the valence band of Si. The calculations are based on a scheme previously proposed and applied to delta-doped quantum well systems [Vlaev S J and Gaggero-Sager L M 1998 Phys. Rev. B 58 1142]. The scheme relies on the incorporation of the delta-doped quantum well potential in the diagonal terms of the tight-binding hamiltonian. We give a detail description of the delta-doped quantum well structures, this is, we study the hole subband structure behavior as a function of the impurity density, the interwell distance of the doped planes and the superlattice period. We also compare our results with the available theoretical and experimental data, obtaining a reasonable agreement.

Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

Energy Technology Data Exchange (ETDEWEB)

Rodriguez-Vargas, I; Madrigal-Melchor, J; Vlaev, S J, E-mail: isaac@planck.reduaz.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, ZAC. (Mexico)

2009-05-01

We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp{sup 3}s' tight-binding approximation including spin for the hole level structure analysis. The parameters of the tight-binding hamiltonian were taken from Klimeck et al. [Klimeck G, Bowen R C, Boykin T B, Salazar-Lazaro C, Cwik T A and Stoica A 2000 Superlattice. Microst. 27 77], first neighbors parameters that give realiable results for the valence band of Si. The calculations are based on a scheme previously proposed and applied to delta-doped quantum well systems [Vlaev S J and Gaggero-Sager L M 1998 Phys. Rev. B 58 1142]. The scheme relies on the incorporation of the delta-doped quantum well potential in the diagonal terms of the tight-binding hamiltonian. We give a detail description of the delta-doped quantum well structures, this is, we study the hole subband structure behavior as a function of the impurity density, the interwell distance of the doped planes and the superlattice period. We also compare our results with the available theoretical and experimental data, obtaining a reasonable agreement.

p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy

International Nuclear Information System (INIS)

Xiu, F.X.; Yang, Z.; Mandalapu, L.J.; Liu, J.L.; Beyermann, W. P.

2006-01-01

Phosphorus-doped p-type ZnO films were grown on r-plane sapphire substrates using molecular-beam epitaxy with a solid-source GaP effusion cell. X-ray diffraction spectra and reflection high-energy electron diffraction patterns indicate that high-quality single crystalline (1120) ZnO films were obtained. Hall and resistivity measurements show that the phosphorus-doped ZnO films have high hole concentrations and low resistivities at room temperature. Photoluminescence (PL) measurements at 8 K reveal a dominant acceptor-bound exciton emission with an energy of 3.317 eV. The acceptor energy level of the phosphorus dopant is estimated to be 0.18 eV above the valence band from PL spectra, which is also consistent with the temperature dependence of PL measurements

p-type Mesoscopic nickel oxide/organometallic perovskite heterojunction solar cells.

Science.gov (United States)

Wang, Kuo-Chin; Jeng, Jun-Yuan; Shen, Po-Shen; Chang, Yu-Cheng; Diau, Eric Wei-Guang; Tsai, Cheng-Hung; Chao, Tzu-Yang; Hsu, Hsu-Cheng; Lin, Pei-Ying; Chen, Peter; Guo, Tzung-Fang; Wen, Ten-Chin

2014-04-23

In this article, we present a new paradigm for organometallic hybrid perovskite solar cell using NiO inorganic metal oxide nanocrystalline as p-type electrode material and realized the first mesoscopic NiO/perovskite/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) heterojunction photovoltaic device. The photo-induced transient absorption spectroscopy results verified that the architecture is an effective p-type sensitized junction, which is the first inorganic p-type, metal oxide contact material for perovskite-based solar cell. Power conversion efficiency of 9.51% was achieved under AM 1.5 G illumination, which significantly surpassed the reported conventional p-type dye-sensitized solar cells. The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics.

p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

Science.gov (United States)

Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

2015-08-05

Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

Observation of Enhanced Hole Extraction in Br Concentration Gradient Perovskite Materials.

Science.gov (United States)

Kim, Min-Cheol; Kim, Byeong Jo; Son, Dae-Yong; Park, Nam-Gyu; Jung, Hyun Suk; Choi, Mansoo

2016-09-14

Enhancing hole extraction inside the perovskite layer is the key factor for boosting photovoltaic performance. Realization of halide concentration gradient perovskite materials has been expected to exhibit rapid hole extraction due to the precise bandgap tuning. Moreover, a formation of Br-rich region on the tri-iodide perovskite layer is expected to enhance moisture stability without a loss of current density. However, conventional synthetic techniques of perovskite materials such as the solution process have not achieved the realization of halide concentration gradient perovskite materials. In this report, we demonstrate the fabrication of Br concentration gradient mixed halide perovskite materials using a novel and facile halide conversion method based on vaporized hydrobromic acid. Accelerated hole extraction and enhanced lifetime due to Br gradient was verified by observing photoluminescence properties. Through the combination of secondary ion mass spectroscopy and transmission electron microscopy with energy-dispersive X-ray spectroscopy analysis, the diffusion behavior of Br ions in perovskite materials was investigated. The Br-gradient was found to be eventually converted into a homogeneous mixed halide layer after undergoing an intermixing process. Br-substituted perovskite solar cells exhibited a power conversion efficiency of 18.94% due to an increase in open circuit voltage from 1.08 to 1.11 V and an advance in fill-factor from 0.71 to 0.74. Long-term stability was also dramatically enhanced after the conversion process, i.e., the power conversion efficiency of the post-treated device has remained over 97% of the initial value under high humid conditions (40-90%) without any encapsulation for 4 weeks.

P -type transparent conducting oxides

International Nuclear Information System (INIS)

Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

2016-01-01

Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n -type, such as Sn doped In 2 O 3 , Al doped ZnO, and F doped SnO 2 . However, the development of efficient p -type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2 p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2 p orbitals with close-shell Cu 3 d 10 orbitals. This work has sparked tremendous interest in designing p -TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p -TCOs, including Cu + -based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr 3+ -based oxides (3 d 3 ) and post-transition metal oxides with lone pair state (ns 2 ). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p -type conductivity and optical properties. Device applications based on p -TCOs for transparent p – n junctions will also be briefly discussed. (topical review)

Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

Science.gov (United States)

Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-07-01

In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

Science.gov (United States)

Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

2017-01-01

Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

2016-12-01

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

Science.gov (United States)

Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

2016-08-01

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

Science.gov (United States)

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

Could there be a hole in type Ia supernovae?

International Nuclear Information System (INIS)

Kasen, Daniel; Nugent, Peter; Thomas, R.C.; Wang, Lifan

2004-01-01

In the favored progenitor scenario, Type Ia supernovae (SNe Ia) arise from a white dwarf accreting material from a non-degenerate companion star. Soon after the white dwarf explodes, the ejected supernova material engulfs the companion star; two-dimensional hydrodynamical simulations by Marietta et al. (2001) show that, in the interaction, the companion star carves out a conical hole of opening angle 30-40 degrees in the supernova ejecta. In this paper we use multi-dimensional Monte Carlo radiative transfer calculations to explore the observable consequences of an ejecta-hole asymmetry. We calculate the variation of the spectrum, luminosity, and polarization with viewing angle for the aspherical supernova near maximum light. We find that the supernova looks normal from almost all viewing angles except when one looks almost directly down the hole. In the latter case, one sees into the deeper, hotter layers of ejecta. The supernova is relatively brighter and has a peculiar spectrum characterized by more highly ionized species, weaker absorption features, and lower absorption velocities. The spectrum viewed down the hole is comparable to the class of SN 1991T-like supernovae. We consider how the ejecta-hole asymmetry may explain the current spectropolarimetric observations of SNe Ia, and suggest a few observational signatures of the geometry. Finally, we discuss the variety currently seen in observed SNe Ia and how an ejecta-hole asymmetry may fit in as one of several possible sources of diversity

Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

KAUST Repository

Awan, Saif Ullah

2014-10-28

Memory and switching devices acquired new materials which exhibit ferroelectric and ferromagnetic order simultaneously. We reported multiferroic behavior in Zn1-yLiyO(0.00≤y≤0.10) nanoparticles. The analysis of transmission electron micrographs confirmed the hexagonal morphology and wurtzite crystalline structure. We investigated p-type conductivity in doped samples and measured hole carriers in range 2.4×1017/cc to 7.3×1017/cc for different Li contents. We found that hole carriers are responsible for long range order ferromagnetic coupling in Li doped samples. Room temperature ferroelectric hysteresis loops were observed in 8% and 10% Li doped samples. We demonstrated ferroelectric coercivity (remnant polarization) 2.5kV/cm (0.11 μC/cm2) and 2.8kV/cm (0.15 μC/cm2) for y=0.08 and y=0.10 samples. We propose that the mechanism of Li induced ferroelectricity in ZnO is due to indirect dipole interaction via hole carriers. We investigated that if the sample has hole carriers ≥5.3×1017/cc, they can mediate the ferroelectricity. Ferroelectric and ferromagnetic measurements showed that higher electric polarization and larger magnetic moment is attained when the hole concentration is larger and vice versa. Our results confirmed the hole dependent coexistence of ferromagnetic and ferroelectric behavior at room temperature, which provide potential applications for switchable and memory devices.

Soil and pasture P concentration in a Fraxinus excelsior L. silvopastoral system fertilised with different types of sewage sludge

Science.gov (United States)

Ferreiro-Domínguez, Nuria; Nair, Vimala; Rigueiro-Rodríguez, Antonio; Rosa Mosquera-Losada, María

2015-04-01

In Europe, sewage sludge should be stabilised before using as fertiliser in agriculture. Depending on the stabilisation process that is used, sewage sludge has different characteristics, nutrient contents and soil nutrient incorporation rates. Sewage sludge is usually applied on a plant-available N or total metal concentration basic, and therefore, P concentrations can be well above crop needs. Leaching of excess P can threaten surface and ground waters with eutrophication. In this context, recent studies have demonstrated that the implementation of agroforestry systems could reduce the P leaching risk compared with conventional agricultural systems due to the different localisation of tree and crop roots which enhance nutrient uptake. The aim of this study was to evaluate during three consecutive years the effect of municipal sewage sludge stabilised by anaerobic digestion, composting, and pelletisation on concentration of P in soil and pasture compared to control treatments (mineral and no fertilisation) in a silvopastoral system established under Fraxinus excelsior L. in Galicia (Spain). The results showed that at the beginning of the study, the fertilisation with mineral increased more the total and available P in soil than the fertilisation with sewage sludge probably because the sludge nutrient release rate is slower than those from mineral fertilisers. The increment of soil available P caused by the mineral fertiliser implied an improvement of the P concentration in the pasture. However, in the last year of the experiment it was observed a positive effect of the fertilisation with pelletised sludge on the concentration of P in pasture compared with the composted sludge and the mineral fertiliser probably due to the annual application of this type of sludge. Therefore, the establishment of silvopastoral systems and their fertilisation with pelletized sludge should be recommended because the pelletized sludge increases the concentration of P in the pasture and

Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

Directory of Open Access Journals (Sweden)

Amann Andreas

2011-01-01

Full Text Available Abstract Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range.

Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

Science.gov (United States)

Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

2008-10-01

The free hole carriers in GaN have been limited to concentrations in the low 1018cm-3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ˜10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ˜1.5×1019cm-3.

Comparison of the electron work function, hole concentration and exciton diffusion length for P3HT and PT prepared by thermal or acid cleavage

Czech Academy of Sciences Publication Activity Database

Toušek, J.; Toušková, J.; Ludvík, Jiří; Liška, Alan; Remeš, Zdeněk; Kylián, O.; Kousal, J.; Chomutová, R.; Heckler, I. M.; Bundgaard, C.; Krebs, F.C.

2016-01-01

Roč. 116, FEB 2016 (2016), s. 111-118 ISSN 0038-1101 R&D Projects: GA ČR(CZ) GA14-05053S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : polythiophene * hole concentration * energy level diagram Subject RIV: CG - Electrochemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.580, year: 2016

Reinventing a p-type doping process for stable ZnO light emitting devices

Science.gov (United States)

Xie, Xiuhua; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

2018-06-01

A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable p-type conductivity. Self-compensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2  ×  2)  +  Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration ~1  ×  1019 cm‑3, is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.

Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

International Nuclear Information System (INIS)

Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

2008-01-01

The free hole carriers in GaN have been limited to concentrations in the low 10 18 cm -3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5x10 19 cm -3

Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

International Nuclear Information System (INIS)

Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

2017-01-01

Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

Variation of pH-measurement in platelet concentrates

NARCIS (Netherlands)

van der Meer, P. F.; van Zanten, A. P.; Pietersz, R. N.; Reesink, H. W.

2001-01-01

To measure pH in platelet concentrates, blood gas analysers with different calibration principles may be used. In this study, variances observed in pH measurements with two types of blood gas analysers were investigated. pH was measured in crystalloid solutions (platelet additive solution (PAS-II),

Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

International Nuclear Information System (INIS)

Fan, J. C.; Zhu, C. Y.; Yang, B.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Wong, K. S.; Zhong, Y. C.; Xie, Z.; Ling, C. C.

2011-01-01

Arsenic doped ZnO and ZnMgO films were deposited on SiO 2 using radio frequency magnetron sputtering and ZnO-Zn 3 As 2 and ZnO-Zn 3 As 2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of ∼10 17 cm -3 and mobility of ∼8 cm 2 V -1 s -1 were obtained at substrate temperatures of 400-500 deg. C The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As Zn -2V Zn shallow acceptor complex and removes the compensating hydrogen center.

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells.

Science.gov (United States)

Lin, Wenjie; Wu, Weiliang; Liu, Zongtao; Qiu, Kaifu; Cai, Lun; Yao, Zhirong; Ai, Bin; Liang, Zongcun; Shen, Hui

2018-04-25

A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x , x solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm 2 ). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x /Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x . Compared with the commercialized p-type solar cell, the novel CrO x -based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.

Internal photoemission for photovoltaic using p-type Schottky barrier: Band structure dependence and theoretical efficiency limits

Science.gov (United States)

Shih, Ko-Han; Chang, Yin-Jung

2018-01-01

Solar energy conversion via internal photoemission (IPE) across a planar p-type Schottky junction is quantified for aluminum (Al) and copper (Cu) in the framework of direct transitions with non-constant matrix elements. Transition probabilities and k-resolved group velocities are obtained based on pseudo-wavefunction expansions and realistic band structures using the pseudopotential method. The k-resolved number of direct transitions, hole photocurrent density, quantum yield (QY), and the power conversion efficiency (PCE) under AM1.5G solar irradiance are subsequently calculated and analyzed. For Al, the parabolic and "parallel-band" effect along the U-W-K path significantly enhances the transition rate with final energies of holes mainly within 1.41 eV below the Fermi energy. For Cu, d-state hot holes mostly generated near the upper edge of 3d bands dominate the hole photocurrent and are weekly (strongly) dependent on the barrier height (metal film thickness). Hot holes produced in the 4s band behave just oppositely to their d-state counterparts. Non-constant matrix elements are shown to be necessary for calculations of transitions due to time-harmonic perturbation in Cu. Compared with Cu, Al-based IPE in p-type Schottky shows the highest PCE (QY) up to about 0.2673% (5.2410%) at ΦB = 0.95 eV (0.5 eV) and a film thickness of 11 nm (20 nm). It is predicted that metals with relatively dispersionless d bands (such as Cu) in most cases do not outperform metals with photon-accessible parallel bands (such as Al) in photon energy conversion using a planar p-type Schottky junction.

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

KAUST Repository

Yan, Long

2018-05-03

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

KAUST Repository

Yan, Long; Zhang, Yuantao; Han, Xu; Deng, Gaoqiang; Li, Pengchong; Yu, Ye; Chen, Liang; Li, Xiaohang; Song, Junfeng

2018-01-01

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

The residual C concentration control for low temperature growth p-type GaN

International Nuclear Information System (INIS)

Liu Shuang-Tao; Zhao De-Gang; Yang Jing; Jiang De-Sheng; Liang Feng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Li Xiang; Liu Wei; Xing Yao; Zhang Li-Qun

2017-01-01

In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration: (i) the C concentration decreases with the increase of growth pressure; (ii) we have found there exists a Ga memory effect when changing the Cp 2 Mg flow which will lead the growth rate and C concentration increase along the increase of Cp 2 Mg flow; (iii) annealing outside of metal–organic chemical vapor deposition (MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration. (paper)

Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

Energy Technology Data Exchange (ETDEWEB)

Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

2015-02-15

Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

Numerical modelling of concentrated leak erosion during Hole Erosion Tests

OpenAIRE

Mercier, F.; Bonelli, S.; Golay, F.; Anselmet, F.; Philippe, P.; Borghi, R.

2015-01-01

This study focuses on the numerical modelling of concentrated leak erosion of a cohesive soil by a turbulent flow in axisymmetrical geometry, with application to the Hole Erosion Test (HET). The numerical model is based on adaptive remeshing of the water/soil interface to ensure accurate description of the mechanical phenomena occurring near the soil/water interface. The erosion law governing the interface motion is based on two erosion parameters: the critical shear stress and the erosion co...

Peculiarities of interaction of the p{sub z}-, π- electrons and the σ{sub p}-holes at the top 1–6 layers of HOPG

Energy Technology Data Exchange (ETDEWEB)

Dementjev, A.P., E-mail: demcarbon@yandex.ru; Ivanov, K.E.

2017-03-31

Graphical abstract: The formation of π-bands and σ{sub p}- holes as result of the p{sub z} → π transitions in 2–6 graphene layers HOPG. The valence band spectrum taken from Murday et al. (1981). - Abstract: The present work continues the analysis of results of Dementjev et al. (2015) in order to identify the interlayer interactions of the π-bands. Analysis of the N(E) C KVV Auger spectra of highly-ordered pyro-graphite showed the absence of the electron exchange between the π-bands in 1–6 layers. Since the π-bands are formed by the p{sub z} → π transitions, one can suggest that the π-band occupation at each graphene layer is formed by the p{sub z}-electrons of this layer. Since the p{sub z} electrons belong to the σ{sub p}-bands, the p{sub z} → π transitions in the σ{sub p}-bands in each of 2–6 graphene layers result in formation of holes H, whose concentration is equal to the concentration of electrons in the π-bands [H{sub i}] ≡ [π{sub i}]. This shows the origin of the ambipolar conductivity in graphene. The absence of the electronic interaction between the π-bands allows a suggestion that the interaction between top six graphene layers is due to the van der Waals electrostatic attractive forces. These forces promote the p{sub z} → π transitions in each of the 2–6 graphene layers and depend on the number of graphene layers above. The N(E) C KVV Auger spectra allow identification of number (1–6) of graphene layers and the π-band occupation at each of the layer. For the first time a specification of the van der Waals forces in HOPG was done.

Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

Energy Technology Data Exchange (ETDEWEB)

Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

2017-04-15

Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

Enhancement of p-type mobility in tin monoxide by native defects

KAUST Repository

Granato, D. B.

2013-05-31

Transparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.

Comparison of the electron work function, hole concentration and exciton diffusion length for P3HT and PT prepared by thermal or acid cleavage

DEFF Research Database (Denmark)

Tousek, J.; Touskova, J.; Ludvík, J.

2016-01-01

samples were prepared from 2 different precursors by thermal or chemical treatment at room temperature. Cyclic voltammetry and work function measurements were used for estimating the concentration of holes. The measured data were evaluated assuming the validity of band theory based on the tight......-binding model. Published data on the valence bandwidth were used for calculating the value of the overlap integral which is related to the hole effective mass. Energy band diagrams were constructed for all 3 materials. Finally, the exciton diffusion length, which is a critical parameter for the application....... It is stated that a native polythiophene prepared by treatment with acids is a prospective material for solar cells and shows a similar quality as that produced by a thermal process. © 2015 Elsevier Ltd. All rights reserved....

A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

KAUST Repository

Bianchi Granato, Danilo

2012-05-01

In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

Energy Technology Data Exchange (ETDEWEB)

Fan, J. C.; Zhu, C. Y.; Yang, B.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Wong, K. S.; Zhong, Y. C.; Xie, Z.; Ling, C. C. [Department of Physics, University of Hong Kong, Pokfulam (Hong Kong); Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, 510119, D-01314, Dresden (Germany); Institut fuer Strahlenphysik, Forschungszentrum Dresden-Rossendorf, 510119, D-01314, Dresden (Germany); Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, 510119, D-01314, Dresden (Germany); Department of Physics, Hong Kong University of Science and Technology (Hong Kong); College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Department of Physics, University of Hong Kong, Pokfulam (Hong Kong)

2011-05-15

Arsenic doped ZnO and ZnMgO films were deposited on SiO{sub 2} using radio frequency magnetron sputtering and ZnO-Zn{sub 3}As{sub 2} and ZnO-Zn{sub 3}As{sub 2}-MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of {approx}10{sup 17} cm{sup -3} and mobility of {approx}8 cm{sup 2} V{sup -1} s{sup -1} were obtained at substrate temperatures of 400-500 deg. C The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As{sub Zn}-2V{sub Zn} shallow acceptor complex and removes the compensating hydrogen center.

A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

Science.gov (United States)

Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

2017-04-01

This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

Positron annihilation spectroscopy in doped p-type ZnO

Science.gov (United States)

Majumdar, Sayanee; Sanyal, D.

2011-07-01

Positron annihilation lifetime (PAL) spectroscopy has been used to investigate the vacancy type defect of the Li and N doped ZnO. The mono-vacancies, shallow -vacancies and open volume defects have been found in both the Li and N doped ZnO. The mono-vacancies, shallow-vacancies and open volume defects increase in N-doped ZnO as the size of N is quite high compared to Li. Positron annihilation study showed that the doping above 1-3% Li and 3-4% N in ZnO are not required in order to achieve low resistivity, high hole concentration and good mobility.

Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration

Science.gov (United States)

Glunk, M.; Daeubler, J.; Dreher, L.; Schwaiger, S.; Schoch, W.; Sauer, R.; Limmer, W.; Brandlmaier, A.; Goennenwein, S. T. B.; Bihler, C.; Brandt, M. S.

2009-05-01

We present a systematic study on the influence of epitaxial strain and hole concentration on the magnetic anisotropy in (Ga,Mn)As at 4.2 K. The strain was gradually varied over a wide range from tensile to compressive by growing a series of (Ga,Mn)As layers with 5% Mn on relaxed graded (In,Ga)As/GaAs templates with different In concentration. The hole density, the Curie temperature, and the relaxed lattice constant of the as-grown and annealed (Ga,Mn)As layers turned out to be essentially unaffected by the strain. Angle-dependent magnetotransport measurements performed at different magnetic-field strengths were used to probe the magnetic anisotropy. The measurements reveal a pronounced linear dependence of the uniaxial out-of-plane anisotropy on both strain and hole density. Whereas the uniaxial and cubic in-plane anisotropies are nearly constant, the cubic out-of-plane anisotropy changes sign when the magnetic easy axis flips from in-plane to out-of-plane. The experimental results for the magnetic anisotropy are quantitatively compared with calculations of the free energy based on a mean-field Zener model. Almost perfect agreement between experiment and theory is found for the uniaxial out-of-plane and cubic in-plane anisotropy parameters of the as-grown samples. In addition, magnetostriction constants are derived from the anisotropy data.

Characterisation of different hole transport materials as used in organic p-i-n solar cells

Energy Technology Data Exchange (ETDEWEB)

Pfuetzner, Steffen; Petrich, Annette; Koch, Maik; Riede, Moritz; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany); Malbrich, Christine [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Dresden (Germany); Hildebrandt, Dirk; Pfeiffer, Martin [Heliatek GmbH, Dresden (Germany)

2008-07-01

This work focuses on the replacement of hole transport material MeO-TPD, which has been used so far in organic p-i-n- solar cells despite its has unfavourable behaviour at elevated temperatures. For this reason, different characterisation and investigations of the hole transport materials PV-TPD, PV-TPDoM, Di-NPB and MeO-Spiro-TPD were done, i.e. dopability, hole mobility, absorption, reflection, cyclic voltametry and glass transition temperature were measured. With simplified structures, e.g. m-i-p diodes, and simplified solar cells, consisting of the blue absorbing fullerene C{sub 60} as acceptor and the transparent donor material 4P-TPD, further specific material properties were determined.

Generic superconducting phase behavior in high-Tc cuprates: Tc variation with hole concentration in YBa2Cu3O7-δ

International Nuclear Information System (INIS)

Tallon, J.L.; Bernhard, C.; Shaked, H.; Hitterman, R.L.; Jorgensen, J.D.

1995-01-01

A direct determination of the relationship between T c and hole concentration p for Y 1-x Ca x Ba 2 Cu 3 O 7-δ is obtained by investigating the properties of the fully oxygen-deficient (δ∼1.0) compound for which p=x/2. Measurements of T c , the thermoelectric power S, and bond-valence sums calculated from neutron-diffraction refinements for various values of x and δ allow the full determination of the relations p=p(δ), T c =T c (p), and S=S(T,p) confirming that YBa 2 Cu 3 O 7-δ satisfies the same universal relations in these quantities as the other high-T c superconducting cuprates

Bulk Decay of (4 + n)-Dimensional Simply Rotating Black Holes: Tensor-Type Gravitons

Energy Technology Data Exchange (ETDEWEB)

Pappas, Nikolaos, E-mail: npappas@cc.uoi.gr [Division of Theoretical Physics, Department of Physics, University of Ioannina, Ioannina GR-45110 (Greece)

2011-02-01

We study the emission in the bulk of tensor-type gravitons by a simply rotating (4 + n)-dimensional black hole. The decoupling of the radial and angular part of the graviton field equation makes it possible to solve them analytically (in the limit of low-energy emitted particles and low-angular momentum of the black hole) and find the corresponding absorption probability. We also move to solve these equations numerically. The comparison between analytic and numerical results shows a very good agreement in low and intermediate energy regimes. Finally, the energy and angular momentum emission rates were calculated in order to explore their dependence on the number of additional spacelike dimensions of the spacetime background and the angular momentum of the black hole. Interesting conclusions about the significance of tensor-type gravitons as energy carriers in the context of Hawking radiation were reached.

Bulk Decay of (4 + n)-Dimensional Simply Rotating Black Holes: Tensor-Type Gravitons

International Nuclear Information System (INIS)

Pappas, Nikolaos

2011-01-01

We study the emission in the bulk of tensor-type gravitons by a simply rotating (4 + n)-dimensional black hole. The decoupling of the radial and angular part of the graviton field equation makes it possible to solve them analytically (in the limit of low-energy emitted particles and low-angular momentum of the black hole) and find the corresponding absorption probability. We also move to solve these equations numerically. The comparison between analytic and numerical results shows a very good agreement in low and intermediate energy regimes. Finally, the energy and angular momentum emission rates were calculated in order to explore their dependence on the number of additional spacelike dimensions of the spacetime background and the angular momentum of the black hole. Interesting conclusions about the significance of tensor-type gravitons as energy carriers in the context of Hawking radiation were reached.

Blood metals concentration in type 1 and type 2 diabetics.

Science.gov (United States)

Forte, Giovanni; Bocca, Beatrice; Peruzzu, Angela; Tolu, Francesco; Asara, Yolande; Farace, Cristiano; Oggiano, Riccardo; Madeddu, Roberto

2013-12-01

Mechanisms for the onset of diabetes and the development of diabetic complications remain under extensive investigations. One of these mechanisms is abnormal homeostasis of metals, as either deficiency or excess of metals, can contribute to certain diabetic outcomes. Therefore, this paper will report the blood levels of chromium (Cr), copper (Cu), iron (Fe), manganese (Mn), mercury (Hg), nickel (Ni), lead (Pb), selenium (Se), and zinc (Zn) in subjects with type 1 diabetes (n = 192, mean age 48.8 years, mean disease duration 20.6 years), type 2 diabetes (n = 68, mean age 68.4 years, mean disease duration 10.2 years), and in control subjects (n = 59, mean age 57.2 years), and discuss the results indicating their possible role in diabetes. The metal concentrations were measured by sector field inductively coupled plasma mass spectrometry after microwave-induced acid digestion of blood samples. The accuracy was checked using a blood-based certified reference material, and recoveries of all elements were in the range of 92-101 % of certified values. Type 1 diabetes was found to be associated with Cr (p = 0.02), Mn (p < 0.001), Ni (p < 0.001), Pb (p = 0.02), and Zn (p < 0.001) deficiency, and type 2 diabetes with Cr (p = 0.014), Mn (p < 0.001), and Ni (p < 0.001) deficiency. These deficiencies were appreciated also subdividing the understudied patients for gender and age groups. Furthermore, in type 1 diabetes, there was a positive correlation between Pb and age (p < 0.001, ρ = 0.400) and Pb and BMI (p < 0.001, ρ = 0.309), while a negative correlation between Fe and age (p = 0.002, ρ = -0.218). In type 2 diabetes, there was a negative correlation between Fe and age (p = 0.017, ρ = -0.294) and Fe and BMI (p = 0.026, ρ = -0.301). Thus, these elements may play a role in both forms of diabetes and combined mineral supplementations could have beneficial effects.

Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

Science.gov (United States)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

2018-02-01

The capacitive characteristics of metal-insulator-semiconductor (MIS) structures based on the compositionally graded Hg1-xCdxTe created by molecular beam epitaxy have been experimentally investigated in a wide temperature range (8-77 K). A program has been developed for numerical simulation of ideal capacitance-voltage (C-V) characteristics in the low-frequency and high-frequency approximations. The concentrations of the majority carriers in the near-surface semiconductor layer are determined from the values of the capacitances in the minima of low-frequency C-V curves. For MIS structures based on p-Hg1-xCdxTe, the effect of the presence of the compositionally graded layer on the hole concentration in the near-surface semiconductor layer, determined from capacitive measurements, has not been established. Perhaps this is due to the fact that the concentration of holes in the near-surface layer largely depends on the type of dielectric coating and the regimes of its application. For MIS structures based on n-Hg1-x Cd x Te (x = 0.22-0.23) without a graded-gap layer, the electron concentration determined by the proposed method is close to the average concentration determined by the Hall measurements. The electron concentration in the near-surface semiconductor layer of the compositionally graded n-Hg1-x Cd x Te (x = 0.22-0.23) found from the minimum capacitance value is much higher than the average electron concentration determined by the Hall measurements. The results are qualitatively explained by the creation of additional intrinsic donor-type defects in the near-surface compositionally graded layer of n-Hg1-x Cd x Te.

Geometrical thermodynamics and P-V criticality of the black holes with power-law Maxwell field

Energy Technology Data Exchange (ETDEWEB)

Hendi, S.H.; Panah, B.E. [Shiraz University, Physics Department and Biruni Observatory, College of Sciences, Shiraz (Iran, Islamic Republic of); Research Institute for Astronomy and Astrophysics of Maragha (RIAAM), Maragha (Iran, Islamic Republic of); Panahiyan, S. [Shiraz University, Physics Department and Biruni Observatory, College of Sciences, Shiraz (Iran, Islamic Republic of); Shahid Beheshti University, Physics Department, Tehran (Iran, Islamic Republic of); Talezadeh, M.S. [Shiraz University, Physics Department and Biruni Observatory, College of Sciences, Shiraz (Iran, Islamic Republic of)

2017-02-15

We study the thermodynamical structure of Einstein black holes in the presence of power Maxwell invariant nonlinear electrodynamics for two different cases. The behavior of temperature and conditions regarding the stability of these black holes are investigated. Since the language of geometry is an effective method in general relativity, we concentrate on the geometrical thermodynamics to build a phase space for studying thermodynamical properties of these black holes. In addition, taking into account the denominator of the heat capacity, we use the proportionality between cosmological constant and thermodynamical pressure to extract the critical values for these black holes. Besides, the effects of the variation of different parameters on the thermodynamical structure of these black holes are investigated. Furthermore, some thermodynamical properties such as the volume expansion coefficient, speed of sound, and isothermal compressibility coefficient are calculated and some remarks regarding these quantities are given. (orig.)

Geometrical thermodynamics and P-V criticality of the black holes with power-law Maxwell field

International Nuclear Information System (INIS)

Hendi, S.H.; Panah, B.E.; Panahiyan, S.; Talezadeh, M.S.

2017-01-01

We study the thermodynamical structure of Einstein black holes in the presence of power Maxwell invariant nonlinear electrodynamics for two different cases. The behavior of temperature and conditions regarding the stability of these black holes are investigated. Since the language of geometry is an effective method in general relativity, we concentrate on the geometrical thermodynamics to build a phase space for studying thermodynamical properties of these black holes. In addition, taking into account the denominator of the heat capacity, we use the proportionality between cosmological constant and thermodynamical pressure to extract the critical values for these black holes. Besides, the effects of the variation of different parameters on the thermodynamical structure of these black holes are investigated. Furthermore, some thermodynamical properties such as the volume expansion coefficient, speed of sound, and isothermal compressibility coefficient are calculated and some remarks regarding these quantities are given. (orig.)

1,2,3,4-bis(p-methylbenzylidene sorbitol) accelerates crystallization and improves hole mobility of poly(3-hexylthiophene)

Science.gov (United States)

Yuan, Nana; Huo, Hong

2016-02-01

The addition of 1,2,3,4-bis(p-methylbenzylidene sorbitol) (MDBS) does not change the nucleation mechanism or the crystal form of poly(3-hexylthiophene) (P3HT), but its presence increases the crystallization temperature (T c) of P3HT, decreases the crystallization half-time (t 1/2) and accelerates P3HT crystallization, which indicates that MDBS is an effective nucleating agent for P3HT. An acceleration of P3HT crystallization by the addition of MDBS decreases the crystalline size and crystallinity of P3HT, and enhances the connectivity between ordered regions of P3HT, leading to the hole mobility rising from 1.99 × 10-6 to 7.57 × 10-5 cm2 V-1s-1 in P3HT:PCBM blend based hole-only devices with sandwich configurations. Our results suggest that accelerating P3HT crystallization by adding a nucleating agent might be an important factor to improve the hole mobility and balance the electron and hole mobility in a photovoltaic blend.

Prediction and Observation of Electron Instabilities and Phase Space Holes Concentrated in the Lunar Plasma Wake

Science.gov (United States)

Hutchinson, Ian H.; Malaspina, David M.

2018-05-01

Recent theory and numerical simulation predicts that the wake of the solar wind flow past the Moon should be the site of electrostatic instabilities that give rise to electron holes. These play an important role in the eventual merging of the wake with the background solar wind. Analysis of measurements from the ARTEMIS satellites, orbiting the Moon at distances from 1.2 to 11 RM, detects holes highly concentrated in the wake, in agreement with prediction. The theory also predicts that the hole flux density observed should be hollow, peaking away from the wake axis. Observation statistics qualitatively confirm this hollowness, lending extra supporting evidence for the identification of their generation mechanism.

Formation of dish-like holes and a channel structure in electrodeposition of copper under hydrogen co-deposition

International Nuclear Information System (INIS)

Nikolic, N.D.; Pavlovic, Lj.J.; Pavlovic, M.G.; Popov, K.I.

2007-01-01

Copper electrodeposition from acid sulfate solutions at an overpotential of 1000 mV, which is about 250 mV outside the plateau of the limiting diffusion current density, was examined by the determination of the average current efficiency of hydrogen evolution and by the scanning electron microscopic (SEM) analysis of the morphology of the formed copper deposits. Craters or holes formed due to the attachment hydrogen bubbles were the dominant morphological forms of copper deposits obtained at this overpotential. In dependence of the concentration of Cu (II) ions in the plating solution, the two types of holes or craters were formed. One type of holes is obtained by electrodeposition from a solution with a concentration of Cu (II) ions of 0.075 M CuSO 4 in 0.50 M H 2 SO 4 , and a honeycomb-like structure was formed from these holes. The other types of holes are formed from a solution with a higher concentration of Cu (II) ions (0.60 M CuSO 4 in 0.50 M H 2 SO 4 ) and the formed holes were dish-like. A mixture of both types of holes was obtained by electrodeposition from 0.30 M CuSO 4 in 0.50 M H 2 SO 4 . The obtained morphologies of copper deposits are discussed in terms of the effect of hydrogen evolution on the hydrodynamic conditions in the plating solution

A Dancing Black Hole

Science.gov (United States)

Shoemaker, Deirdre; Smith, Kenneth; Schnetter, Erik; Fiske, David; Laguna, Pablo; Pullin, Jorge

2002-04-01

Recently, stationary black holes have been successfully simulated for up to times of approximately 600-1000M, where M is the mass of the black hole. Considering that the expected burst of gravitational radiation from a binary black hole merger would last approximately 200-500M, black hole codes are approaching the point where simulations of mergers may be feasible. We will present two types of simulations of single black holes obtained with a code based on the Baumgarte-Shapiro-Shibata-Nakamura formulation of the Einstein evolution equations. One type of simulations addresses the stability properties of stationary black hole evolutions. The second type of simulations demonstrates the ability of our code to move a black hole through the computational domain. This is accomplished by shifting the stationary black hole solution to a coordinate system in which the location of the black hole is time dependent.

Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Goto, Masaki; Amano, Ryo; Shimoda, Naotaka [Graduate School of Automotive Science, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Kato, Yoshimine, E-mail: yoshimine.kato@zaiko.kyushu-u.ac.jp [Department of Materials Science and Engineering, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Teii, Kungen [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2014-04-14

Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

Electric field effects on radiation defects annealing in p-InP

International Nuclear Information System (INIS)

Sibille, A.

1983-01-01

Annealing experiments have been performed on electron irradiated Schottky diodes on p-InP. They show a strong influence of the applied reverse bias during annealing on the recovery of the free holes concentration, as well as on the disappearance of the dominant radiation induced hole traps detected by deep level transient spectroscopy (DLTS). Compensating defects are observed to drift under the action of the electric field and accumulate at the edge of the depleted zone, while the main hole traps created by the irradiation anneal faster when empty of holes or subjected to an electric field. (author)

Flow rate, pH and calcium concentration of saliva of children and adolescents with type 1 diabetes mellitus

Directory of Open Access Journals (Sweden)

A.R. Moreira

2009-08-01

Full Text Available Alterations in salivary parameters may increase the caries risk in diabetic children, but, contradictory data on this issue have been reported. The aims of this study were to compare salivary parameters (flow rate, pH and calcium concentration between healthy and type 1 diabetes mellitus (T1DM individuals. The sample consisted of 7- to 18-year-old individuals divided into two groups: 30 subjects with T1DM (group A and 30 healthy control subjects (group B. Fasting glucose levels were determined. Unstimulated and stimulated saliva was collected. The pH of unstimulated saliva was measured with paper strips and an electrode. Calcium concentrations in stimulated saliva were determined with a selective electrode. Group A individuals had inadequate blood glucose control (HbA1C >9%, with means ± SD unstimulated salivary flow rate of 0.15 ± 0.1 mL/min compared to 0.36 ± 0.2 mL/min for group B (P < 0.01. Stimulated salivary flow rate was similar by both groups and above 2.0 mL/min. Saliva pH was 6.0 ± 0.8 for group A and significantly different from 7.0 ± 0.6 for group B (P < 0.01. Salivary calcium was 14.7 ± 8.1 mg/L for group A and significantly higher than 9.9 ± 6.4 mg/L for group B (P < 0.01. Except for elevated calcium concentrations in saliva, salivary parameters favoring caries such as low saliva pH and unstimulated salivary flow rate were observed in T1DM individuals.

Geometry of deformed black holes. II. Schwarzschild hole surrounded by a Bach-Weyl ring

Science.gov (United States)

Basovník, M.; Semerák, O.

2016-08-01

We continue to study the response of black-hole space-times on the presence of additional strong sources of gravity. Restricting ourselves to static and axially symmetric (electro)vacuum exact solutions of Einstein's equations, we first considered the Majumdar-Papapetrou solution for a binary of extreme black holes in a previous paper, while here we deal with a Schwarzschild black hole surrounded by a concentric thin ring described by the Bach-Weyl solution. The geometry is again revealed on the simplest invariants determined by the metric (lapse function) and its gradient (gravitational acceleration), and by curvature (Kretschmann scalar). Extending the metric inside the black hole along null geodesics tangent to the horizon, we mainly focus on the black-hole interior (specifically, on its sections at constant Killing time) where the quantities behave in a way indicating a surprisingly strong influence of the external source. Being already distinct on the level of potential and acceleration, this is still more pronounced on the level of curvature: for a sufficiently massive and/or nearby (small) ring, the Kretschmann scalar even becomes negative in certain toroidal regions mostly touching the horizon from inside. Such regions have been interpreted as those where magnetic-type curvature dominates, but here we deal with space-times which do not involve rotation and the negative value is achieved due to the electric-type components of the Riemann/Weyl tensor. The Kretschmann scalar also shapes rather nontrivial landscapes outside the horizon.

Effect of Substitutional Pb Doping on Bipolar and Lattice Thermal Conductivity in p-Type Bi0.48Sb1.52Te₃.

Science.gov (United States)

Kim, Hyun-Sik; Lee, Kyu Hyoung; Yoo, Joonyeon; Youn, Jehun; Roh, Jong Wook; Kim, Sang-Il; Kim, Sung Wng

2017-07-06

Cation substitutional doping is an effective approach to modifying the electronic and thermal transports in Bi₂Te₃-based thermoelectric alloys. Here we present a comprehensive analysis of the electrical and thermal conductivities of polycrystalline Pb-doped p-type bulk Bi 0.48 Sb 1.52 Te₃. Pb doping significantly increased the electrical conductivity up to ~2700 S/cm at x = 0.02 in Bi 0.48-x Pb x Sb 1.52 Te₃ due to the increase in hole carrier concentration. Even though the total thermal conductivity increased as Pb was added, due to the increased hole carrier concentration, the thermal conductivity was reduced by 14-22% if the contribution of the increased hole carrier concentration was excluded. To further understand the origin of reduction in the thermal conductivity, we first estimated the contribution of bipolar conduction to thermal conductivity from a two-parabolic band model, which is an extension of the single parabolic band model. Thereafter, the contribution of additional point defect scattering caused by Pb substitution (Pb in the cation site) was analyzed using the Debye-Callaway model. We found that Pb doping significantly suppressed both the bipolar thermal conduction and lattice thermal conductivity simultaneously, while the bipolar contribution to the total thermal conductivity reduction increased at high temperatures. At Pb doping of x = 0.02, the bipolar thermal conductivity decreased by ~30% from 0.47 W/mK to 0.33 W/mK at 480 K, which accounts for 70% of the total reduction.

Change in the electrical conductivity of SnO2 crystal from n-type to p-type conductivity

International Nuclear Information System (INIS)

Villamagua, Luis; Stashans, Arvids; Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi; Carini, Manuela

2015-01-01

Highlights: • Switch from n-type to p-type conductivity in SnO 2 has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO 2 compound shows stable p-type conductivity. • Low resistivity (3.657 × 10 −1 Ω cm) has been obtained. • High carrier concentration (4.858 × 10 19 cm −3 ) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO 2 systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO 2 material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling

Thermal Stability of P-Type BiSbTe Alloys Prepared by Melt Spinning and Rapid Sintering

Directory of Open Access Journals (Sweden)

Yun Zheng

2017-06-01

Full Text Available P-type BiSbTe alloys have been widely implemented in waste heat recovery from low-grade heat sources below 600 K, which may involve assorted environments and conditions, such as long-term service, high-temperature exposure (generally 473–573 K and mechanical forces. It is important to evaluate the service performance of these materials in order to prevent possible failures in advance and extend the life cycle. In this study, p-type Bi0.5Sb1.5Te3 commercial zone-melting (ZM ingots were processed by melt spinning and subsequent plasma-activated sintering (MS-PAS, and were then subjected to vacuum-annealing at 473 and 573 K, respectively, for one week. The results show that MS-PAS samples exhibit excellent thermal stability when annealed at 473 K. However, thermal annealing at 573 K for MS-PAS specimens leads to the distinct sublimation of the element Te, which degrades the hole concentration remarkably and results in inferior thermoelectric performance. Furthermore, MS-PAS samples annealed at 473 K demonstrate a slight enhancement in flexural and compressive strengths, probably due to the reduction of residual stress induced during the sintering process. The current work guides the reliable application of p-type Bi0.5Sb1.5Te3 compounds prepared by the MS-PAS technique.

Delayed, spontaneous conversion of type 2 closure to type 1 closure following surgery for traumatic macular hole associated with submacular hemorrhage

Directory of Open Access Journals (Sweden)

Pukhraj Rishi

2012-01-01

Full Text Available A 45-year-old man presented with diminution of vision in the left eye following a firecracker injury. Best corrected visual acuity (BCVA was 20/20 in the right eye and 20/125 in the left eye. Fundus examination revealed vitreous hemorrhage, a macular hole, and submacular hemorrhage in the left eye. The patient underwent vitrectomy, tissue plasminogen activator (tPA-assisted evacuation of the submacular hemorrhage, internal limiting membrane (ILM peeling, and 14% C3F8 gas insufflation. After two months, the BCVA remained 20/125 and optical coherence tomography (OCT showed type 2 macular hole closure. On a follow-up, seven months after surgery, BCVA improved to 20/80, N6, with type 1 closure of the macular hole. The clinical findings were confirmed on OCT. Delayed and spontaneous conversion of the traumatic macular hole could occur several months after the primary surgery and may be associated with improved visual outcome. Larger studies are required to better understand the factors implicated in such a phenomenon.

Microstates of D1–D5(-P) black holes, as interacting D-branes

Energy Technology Data Exchange (ETDEWEB)

Morita, Takeshi, E-mail: morita.takeshi@shizuoka.ac.jp [Department of Physics, Shizuoka University, 836 Ohya, Suruga-ku, Shizuoka 422-8529 (Japan); Shiba, Shotaro, E-mail: sshiba@cc.kyoto-su.ac.jp [Maskawa Institute for Science and Culture, Kyoto Sangyo University, Kamigamo-Motoyama, Kita-ku, Kyoto 603-8555 (Japan)

2015-07-30

In our previous study (Morita et al., 2014 [1]), we figured out that the thermodynamics of the near extremal black p-branes can be explained as the collective motions of gravitationally interacting elementary p-branes (the p-soup proposal). We test this proposal in the near-extremal D1–D5 and D1–D5-P black holes and show that their thermodynamics also can be explained in a similar fashion, i.e. via the collective motions of the interacting elementary D1-branes and D5-branes (and waves). It may imply that the microscopic origins of these intersecting black branes and the black p-brane are explained in the unified picture. We also argue the relation between the p-soup proposal and the conformal field theory calculations of the D1–D5(-P) black holes in superstring theory.

Microstates of D1–D5(-P black holes, as interacting D-branes

Directory of Open Access Journals (Sweden)

Takeshi Morita

2015-07-01

Full Text Available In our previous study (Morita et al., 2014 [1], we figured out that the thermodynamics of the near extremal black p-branes can be explained as the collective motions of gravitationally interacting elementary p-branes (the p-soup proposal. We test this proposal in the near-extremal D1–D5 and D1–D5-P black holes and show that their thermodynamics also can be explained in a similar fashion, i.e. via the collective motions of the interacting elementary D1-branes and D5-branes (and waves. It may imply that the microscopic origins of these intersecting black branes and the black p-brane are explained in the unified picture. We also argue the relation between the p-soup proposal and the conformal field theory calculations of the D1–D5(-P black holes in superstring theory.

Microstates of D1–D5(-P) black holes, as interacting D-branes

International Nuclear Information System (INIS)

Morita, Takeshi; Shiba, Shotaro

2015-01-01

In our previous study (Morita et al., 2014 [1]), we figured out that the thermodynamics of the near extremal black p-branes can be explained as the collective motions of gravitationally interacting elementary p-branes (the p-soup proposal). We test this proposal in the near-extremal D1–D5 and D1–D5-P black holes and show that their thermodynamics also can be explained in a similar fashion, i.e. via the collective motions of the interacting elementary D1-branes and D5-branes (and waves). It may imply that the microscopic origins of these intersecting black branes and the black p-brane are explained in the unified picture. We also argue the relation between the p-soup proposal and the conformal field theory calculations of the D1–D5(-P) black holes in superstring theory

One particle-hole excitations in p- and fp-shell nuclei

International Nuclear Information System (INIS)

Hees, A.G.M. van.

1982-01-01

Results are presented of shell model calculations of medium and light atomic nuclei. The influence of the allowance of one particle-hole excitations is investigated. This enables improved descriptions of intermediate mass nuclei in the fp-shell. For light p-shell nuclei one particle-hole excitations create exclusively situations with abnormal parity. The description of situations with normal parity is not changed by enlarging the model space. In the first chapter shell-model calculations are performed on the light Ni-isotopes (A = 57-59). One nucleon is allowed to be excited from the fsub(7/2) orbit to one of the other fp-shell orbits. The general observation in the enlarged model space is that one can use operators that require a much weaker 'renormalization' and the calculation requires only a selected set of matrix elements of the Hamiltonian. An additional advantage of the inclusion of one particle-hole excitations is that it allows a description of several intruder states, i.e. states that cannot be produced with the assumption of a closed 56 Ni core. In the second chapter the nuclei with mass number A = 52-55, i.e. a small number of holes in the 56 Ni core, are investigated similarly. In the third chapter much lighter nuclei (A = 4-16) are discussed. For a theoretical description of nonnormal-parity states one has to admit the excitation of at least one nucleon to a higher harmonic-oscillator major-shell. (Auth.)

Photoconversion and dynamic hole recycling process in anion vacancies in neutron-irradiated MgO crystals

International Nuclear Information System (INIS)

Monge, M.A.; Gonzalez, R.; Munoz Santiuste, J.E.; Pareja, R.; Chen, Y.; Kotomin, E.A.; Popov, A.I.

1999-01-01

Optical spectroscopy and theory demonstrate that photon excitation of the positively charged anion vacancies (F + centers) at 5.0 eV in neutron-irradiated MgO crystals releases holes that are subsequently trapped at V-type centers, which are cation vacancies charge compensated by impurities, such as Al 3+ , F - , and OH - ions. The concentration of trapped-hole centers was found to exceed that of available anion vacancies. The disproportionately large amount of holes produced is attributed to a dynamic recycling process, by which the F + center serves to release a hole to the V-type centers and subsequently trap a hole from an Fe 3+ ion. The net effect was the increase of V-type centers mostly at the expense of Fe 3+ ions. It was also shown that concurrently there was a component which distributed holes directly from Fe 3+ to the V-type centers. copyright 1999 The American Physical Society

Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

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Hong Yu

2009-04-01

Full Text Available In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.

Flow rate, pH and calcium concentration of saliva of children and adolescents with type 1 diabetes mellitus.

Science.gov (United States)

Moreira, A R; Passos, I A; Sampaio, F C; Soares, M S M; Oliveira, R J

2009-08-01

Alterations in salivary parameters may increase the caries risk in diabetic children, but, contradictory data on this issue have been reported. The aims of this study were to compare salivary parameters (flow rate, pH and calcium concentration) between healthy and type 1 diabetes mellitus (T1DM) individuals. The sample consisted of 7- to 18-year-old individuals divided into two groups: 30 subjects with T1DM (group A) and 30 healthy control subjects (group B). Fasting glucose levels were determined. Unstimulated and stimulated saliva was collected. The pH of unstimulated saliva was measured with paper strips and an electrode. Calcium concentrations in stimulated saliva were determined with a selective electrode. Group A individuals had inadequate blood glucose control (HbA(1C) >9%), with means +/- SD unstimulated salivary flow rate of 0.15 +/- 0.1 mL/min compared to 0.36 +/- 0.2 mL/min for group B (P salivary flow rate was similar by both groups and above 2.0 mL/min. Saliva pH was 6.0 +/- 0.8 for group A and significantly different from 7.0 +/- 0.6 for group B (P Salivary calcium was 14.7 +/- 8.1 mg/L for group A and significantly higher than 9.9 +/- 6.4 mg/L for group B (P salivary parameters favoring caries such as low saliva pH and unstimulated salivary flow rate were observed in T1DM individuals.

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

Science.gov (United States)

McNamara, J. D.; Phumisithikul, K. L.; Baski, A. A.; Marini, J.; Shahedipour-Sandvik, F.; Das, S.; Reshchikov, M. A.

2016-10-01

The surface photovoltage (SPV) technique was used to study the surface and electrical properties of Mg-doped, p-type AlxGa1-xN (0.06 GaN:Mg thin films and from the predictions of a thermionic model for the SPV behavior. In particular, the SPV of the p-AlGaN:Mg layers exhibited slower-than-expected transients under ultraviolet illumination and delayed restoration to the initial dark value. The slow transients and delayed restorations can be attributed to a defective surface region which interferes with normal thermionic processes. The top 45 nm of the p-AlGaN:Mg layer was etched using a reactive-ion etch which caused the SPV behavior to be substantially different. From this study, it can be concluded that a defective, near-surface region is inhibiting the change in positive surface charge by allowing tunneling or hopping conductivity of holes from the bulk to the surface, or by the trapping of electrons traveling to the surface by a high concentration of defects in the near-surface region. Etching removes the defective layer and reveals a region of presumably higher quality, as evidenced by substantial changes in the SPV behavior.

Insight into π-hole interactions containing the inorganic heterocyclic compounds S2N2/SN2P2.

Science.gov (United States)

Lu, Bo; Zhang, Xueying; Meng, Lingpeng; Zeng, Yanli

2017-08-01

Similar to σ-hole interactions, the π-hole interaction has attracted much attention in recent years. According to the positive electrostatic potentials above and below the surface of inorganic heterocyclic compounds S 2 N 2 and three SN 2 P 2 isomers (heterocyclic compounds 1-4), and the negative electrostatic potential outside the X atom of XH 3 (X = N, P, As), S 2 N 2 /SN 2 P 2 ⋯XH 3 (X = N, P, As) complexes were constructed and optimized at the MP2/aug-cc-pVTZ level. The X atom of XH 3 (X = N, P, As) is almost perpendicular to the ring of the heterocyclic compounds. The π-hole interaction energy becomes greater as the trend goes from 1⋯XH 3 to 4⋯XH 3 . These π-hole interactions are weak and belong to "closed-shell" noncovalent interactions. According to the energy decomposition analysis, of the three attractive terms, the dispersion energy contributes more than the electrostatic energy. The polarization effect also plays an important role in the formation of π-hole complexes, with the contrasting phenomena of decreasing electronic density in the π-hole region and increasing electric density outside the X atom of XH 3 (X = N, P, As). Graphical abstract Computed density difference plots for the complexes 3⋯NH 3 (a 1 ), 3⋯PH 3 (b 1 ), 3⋯AsH 3 (c 1 ) and electron density shifts for the complexes 3⋯NH 3 (a 2 ), 3⋯PH 3 (b 2 ),3⋯AsH 3 (c 2 ) on the 0.001 a.u. contour.

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

Science.gov (United States)

Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2017-07-10

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration

KAUST Repository

Chen, Chang-Hsiao

2014-10-28

Tungsten diselenide (WSe2) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p-n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe2 monolayer, where a more p-typed WSe2 field effect transistor is realized by electron transfer from the WSe2 to the gold (Au) decorated on the WSe2 surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe2 monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ~100 (cm2/Vs) and the near ideal subthreshold swing of ~60 mV/decade and high on/off current ratio of >106 are observed. The Au deposited on the WSe2 also serves as a protection layer to prevent a reaction between the WSe2 and the environment, making the doping stable and promising for future scalable fabrication.

The two-hole ground state of the Hubbard-Anderson model, approximated by a variational RVB-type wave function

NARCIS (Netherlands)

Traa, M.R.M.J.; Traa, M.R.M.J.; Caspers, W.J.; Caspers, W.J.; Banning, E.J.; Banning, E.J.

1994-01-01

In this paper the Hubbard-Anderson model on a square lattice with two holes is studied. The ground state (GS) is approximated by a variational RVB-type wave function. The holes interact by exchange of a localized spin excitation (SE), which is created or absorbed if a hole moves to a

Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO

Science.gov (United States)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-04-01

The effects of hole injection in amorphous indium-gallium-zinc-oxide (a-IGZO) are analyzed by means of first-principles calculations. The injection of holes in the valence band tail states leads to their capture as a polaron, with high self-trapping energies (from 0.44 to 1.15 eV). Once formed, they mediate the formation of peroxides and remain localized close to the hole injection source due to the presence of a large diffusion energy barrier (of at least 0.6 eV). Their diffusion mechanism can be mediated by the presence of hydrogen. The capture of these holes is correlated with the low off-current observed for a-IGZO transistors, as well as with the difficulty to obtain a p-type conductivity. The results further support the formation of peroxides as being the root cause of Negative Bias Illumination Stress (NBIS). The strong self-trapping substantially reduces the injection of holes from the contact and limits the creation of peroxides from a direct hole injection. In the presence of light, the concentration of holes substantially rises and mediates the creation of peroxides, responsible for NBIS.

Thermodynamic variables of first-order entropy corrected Lovelock-AdS black holes: P{-}V criticality analysis

Science.gov (United States)

Haldar, Amritendu; Biswas, Ritabrata

2018-06-01

We investigate the effect of thermal fluctuations on the thermodynamics of a Lovelock-AdS black hole. Taking the first order logarithmic correction term in entropy we analyze the thermodynamic potentials like Helmholtz free energy, enthalpy and Gibbs free energy. We find that all the thermodynamic potentials are decreasing functions of correction coefficient α . We also examined this correction coefficient must be positive by analysing P{-}V diagram. Further we study the P{-}V criticality and stability and find that presence of logarithmic correction in it is necessary to have critical points and stable phases. When P{-}V criticality appears, we calculate the critical volume V_c, critical pressure P_c and critical temperature T_c using different equations and show that there is no critical point for this black hole without thermal fluctuations. We also study the geometrothermodynamics of this kind of black holes. The Ricci scalar of the Ruppeiner metric is graphically analysed.

Oxygen and minority carrier lifetimes in N-and P-type AL0.2GA0.8AS grown by metal organics vapor phase epitaxy

International Nuclear Information System (INIS)

Zahraman, Khaled; Leroux, M.; Gibart, P.; Zaidi, M.A.; Bremond, G.; Guillot, G.

2000-01-01

author.The minority carrier lifetimes in Al x Ga 1-x As grown by Metal-Organics Vapor Phase Epitaxy (MOVPE) is generally lower than in GaAs. This is believed to be due to oxygen incorporation in the layers. We describe a study of radiative and non radiative minority carriers lifetimes in n-and p-type Al 0.2 Ga 0.8 As as a function of growth parameters, in correlation with oxygen concentration measurements and deep level transient spectroscopy (DLTS) studies. Long non radiative lifetimes and low oxygen contents are achieved using temperature growth. A main minority hole lifetime killer appears to be 0.4 eV deep O related electron trap detected by DLTS at concentrations three orders of magnitude lower than the atomic oxygen one. Record lifetimes in MOVPE grown n-and p-type Al 0.2 Ga 0.8 As are obtained. An Al 0.85 Ga 0.15 As/Al 0.2 Ga 0.8 As surface recombination velocity lower than 4.5x10 3 cm.s -1 is measured

Measurement of Effective Drift Velocities of Electrons and Holes in Shallow Multiple Quantum Well P-I Modulators

Science.gov (United States)

Yang, Ching-Mei

1995-01-01

P-i-n diodes containing multiple quantum wells (MQWs) in the i-region are the building blocks for photonic devices. When we apply electric field across these devices and illuminate it with light, photo-carriers are created in the i-region. These carriers escape from the wells and drift toward the electrodes; thus photo-voltage is created. The rise- and decay-times of photo-voltages are related to the transport of carriers. In this dissertation, we present theoretical and experimental studies on carrier transport mechanisms of three shallow MQW GaAs/Al _{x}Ga_{1-x}As p-i-n diodes (x = 0.02, 0.04, 0.08) at various bias voltages. We start with the description of the sample structures and their package. We then present the characteristics of these samples including their transmission spectra and responsivity. We will demonstrate that the over-all high quality of these samples, including a strong exciton resonant absorption, ~100% internal quantum efficiencies and completely depleted i-region at bias between +0.75 V to -5 V bias. In our theoretical studies, we first discuss the possible carrier sweep-out mechanisms and estimate the response times associated with these mechanisms. Based on our theoretical model, we conclude that only the drift times of carriers and enhanced diffusion times are important for shallow MQW p-i-n diodes: at high bias, the fast drift times of electrons and holes control the rise-times; at low bias, the slow drift times of holes and the enhanced diffusion times control the decay-times. We have performed picosecond time-resolved pump/probe electro-absorption measurements on these samples. We then obtained the drift times, effective drift velocities and effective mobilities of electrons and holes for these devices. We find that the carrier effective drift velocities (especially for holes) seemed insensitive to the Al concentration in the barriers (in the range of x = 2% to 8%), even though the x = 2% sample does show an overall faster response

Preparation and thermoelectric properties of p-Type PrzFe4-xCoxSb12 skutterudites

International Nuclear Information System (INIS)

Shin, Dong-Kil; Kim, Il-Ho

2014-01-01

p-Type Pr z Fe 4-x Co x Sb 12 (z = 0.8, 1.0 and x = 0, 0.5, 1.0) skutterudites were synthesized by encapsulated melting and annealing and were consolidated with hot pressing. The effects of Pr filling and Co substitution for Fe (charge compensation) on the transport and the thermoelectric properties were examined. A few secondary phases, such as Sb and FeSb 2 , were formed together with the skutterudite phase, but the formation was suppressed with increasing Pr and Co contents. We confirmed that Pr filled in the voids and that Co was substituted for Fe in all specimens because the lattice constant increased with increasing Pr content and decreased with increasing Co content. The electrical conductivity decreased slightly with increasing temperature, showing degenerate semiconductor characteristics. The Hall and the Seebeck coefficients showed positive signs, indicating that the major carriers were holes (p-type conduction). The electrical conductivity and the thermal conductivity were decreased due to a decrease in the carrier concentration with increasing Pr and Co contents. As a result, the dimensionless figure of merit, ZT, was improved by Pr filling and Co substitution, and a maximum ZT = 0.89 was obtained at 723 K for Pr 0.8 Fe 3 CoSb 12 .

Gamma radiation scanning of nuclear waste storage tile holes

International Nuclear Information System (INIS)

Das, A.; Yue, S.; Sur, B.; Johnston, J.; Gaudet, M.; Wright, M.; Burton, N.

2010-01-01

Nuclear waste management facilities at Chalk River Laboratories use below-ground 'tile holes' to store solid waste from various activities such as medical radioisotope production. A silicon PIN (p-type-intrinsic-n-type semiconductor) diode based gamma radiation scanning system has been developed and used to profile the gamma radiation fields along the depth of waste storage tile holes by deploying the sensor into verification tubes adjacent to the tile holes themselves. The radiation field measurements were consistent with expected radiation fields in the tile holes based on administrative knowledge of the radioactive contents and their corresponding decay rates. Such measurements allow non-invasive verification of tile hole contents and provide input to the assessment of radiological risk associated with removal of the waste. Using this detector system, radioactive waste that has decayed to very low levels may be identified based on the radiation profile. This information will support planning for possible transfer of this waste to a licensed waste storage facility designed for low level waste, thus freeing storage space for possible tile hole re-use for more highly radioactive waste. (author)

Change in the electrical conductivity of SnO{sub 2} crystal from n-type to p-type conductivity

Energy Technology Data Exchange (ETDEWEB)

Villamagua, Luis, E-mail: luis.villamagua@tyndall.ie [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy); Stashans, Arvids [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi [Department of Chemical and Materials Engineering, National Central University, Jhong-Li, Taiwan (China); Carini, Manuela [Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy)

2015-05-01

Highlights: • Switch from n-type to p-type conductivity in SnO{sub 2} has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO{sub 2} compound shows stable p-type conductivity. • Low resistivity (3.657 × 10{sup −1} Ω cm) has been obtained. • High carrier concentration (4.858 × 10{sup 19} cm{sup −3}) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO{sub 2} systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO{sub 2} material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling.

Porous silicon formation by hole injection from a back side p+/n junction for electrical insulation applications

International Nuclear Information System (INIS)

Fèvre, A; Menard, S; Defforge, T; Gautier, G

2016-01-01

In this paper, we propose to study the formation of porous silicon (PS) in low doped (1 × 10 14 cm −3 ) n-type silicon through hole injection from a back side p + /n junction in the dark. This technique is investigated within the framework of electrical insulation. Three different types of junctions are investigated. The first one is an epitaxial n-type layer grown on p + doped silicon wafer. The two other junctions are carried out by boron diffusion leading to p + regions with junction depths of 20 and 115 μm. The resulting PS morphology is a double layer with a nucleation layer (NL) and macropores fully filled with mesoporous material. This result is unusual for low doped n-type silicon. Morphology variations are described depending on the junction formation process, the electrolyte composition, the anodization current density and duration. In order to validate the more interesting industrial potentialities of the p + /n injection technique, a comparison is achieved with back side illumination in terms of resulting morphology and experiments confirm comparable results. Electrical characterizations of the double layer, including NL and fully filled macropores, are then performed. To our knowledge, this is the first electrical investigation in low doped n type silicon with this morphology. Compared to the bulk silicon, the measured electrical resistivities are 6–7 orders of magnitude higher at 373 K. (paper)

Effect of thallium impurity on hole scattering in lead telluride

International Nuclear Information System (INIS)

Kajdanov, V.I.; Nemov, S.A.

1981-01-01

Hole mobility in PbTe monocrystalline specimens in the temperature range from 4.2 to 300 K has been investigated. Detected is a sharp increase in scattering cross section of light and heavy holes in the specimens having the Hall hole concentration p approximately (5+-9)x10 19 cm -3 explained by resonant scattering into a band of quasilocal states of thallium located lower than the ceiling of heavy carrier zone by 0.01+-0.01 eV. Very large differences in resonant scattering of current carriers into the quasilocal states of In and Tl in PbTe result from the inertial polarizability of a crystal. The same mechanism is used to explain long-lived relaxation of zone electron concentration in lead telluride and Pbsub(1-x)Snsub(x)Te doped with indium [ru

Intraband light absorption by holes in InGaAsP/InP quantum wells

Science.gov (United States)

Pavlov, N. V.; Zegrya, G. G.

2018-03-01

A microscopic analysis of the mechanism of intraband radiation absorption by holes with their transition to a spin-split band for quantum wells based on InGaAsP/InP solid solutions is performed within the framework of the four-band Kane model. The calculation is made for two polarizations of the incident radiation: along the crystal growth axis and in the plane of the quantum well. It is shown that this process can be the main mechanism of internal radiation losses for quantum well lasers. It is also shown that the dependence of the absorption coefficient on the width of the quantum well has a maximum at a well width from 40 to 60 A.

Forest Management Intensity Affects Aquatic Communities in Artificial Tree Holes.

Science.gov (United States)

Petermann, Jana S; Rohland, Anja; Sichardt, Nora; Lade, Peggy; Guidetti, Brenda; Weisser, Wolfgang W; Gossner, Martin M

2016-01-01

Forest management could potentially affect organisms in all forest habitats. However, aquatic communities in water-filled tree-holes may be especially sensitive because of small population sizes, the risk of drought and potential dispersal limitation. We set up artificial tree holes in forest stands subject to different management intensities in two regions in Germany and assessed the influence of local environmental properties (tree-hole opening type, tree diameter, water volume and water temperature) as well as regional drivers (forest management intensity, tree-hole density) on tree-hole insect communities (not considering other organisms such as nematodes or rotifers), detritus content, oxygen and nutrient concentrations. In addition, we compared data from artificial tree holes with data from natural tree holes in the same area to evaluate the methodological approach of using tree-hole analogues. We found that forest management had strong effects on communities in artificial tree holes in both regions and across the season. Abundance and species richness declined, community composition shifted and detritus content declined with increasing forest management intensity. Environmental variables, such as tree-hole density and tree diameter partly explained these changes. However, dispersal limitation, indicated by effects of tree-hole density, generally showed rather weak impacts on communities. Artificial tree holes had higher water temperatures (on average 2°C higher) and oxygen concentrations (on average 25% higher) than natural tree holes. The abundance of organisms was higher but species richness was lower in artificial tree holes. Community composition differed between artificial and natural tree holes. Negative management effects were detectable in both tree-hole systems, despite their abiotic and biotic differences. Our results indicate that forest management has substantial and pervasive effects on tree-hole communities and may alter their structure and

Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN

Science.gov (United States)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Yang, Fan; McComb, David W.; Myers, Roberto C.

2015-01-01

We report a systematic study of p-type polarization-induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a set of samples from 0.7%Al/nm to 4.95%Al/nm corresponding to negative bound polarization charge densities of 2.2 × 1018 cm-3 to 1.6 × 1019 cm-3. Capacitance measurements and energy band modeling reveal that for gradients greater than or equal to 1.30%Al/nm, the deep donor concentration is negligible and free hole concentrations roughly equal to the bound polarization charge density are achieved up to 1.6 × 1019 cm-3 at a gradient of 4.95%Al/nm. Accurate grading lengths in the p- and n-side of the pn-junction are extracted from scanning transmission electron microscopy images and are used to support energy band calculation and capacitance modeling. These results demonstrate the robust nature of p-type polarization doping in nanowires and put an upper bound on the magnitude of deep donor compensation.

Warm p-soup and near extremal black holes

Science.gov (United States)

Morita, Takeshi; Shiba, Shotaro; Wiseman, Toby; Withers, Benjamin

2014-04-01

We consider a model of D-dimensional supergravity coupled to elementary p-branes. We use gravitational arguments to deduce the low energy effective theory of N nearly parallel branes. This is a (p + 1)-dimensional scalar field theory, where the scalars represent the positions of the branes in their transverse space. We propose that the same theory in a certain temperature regime describes a ‘soup’ of strongly interacting branes, giving a microscopic description of near extremal black p-branes. We use natural approximations to estimate the energy density of this soup as a function of the physical parameters; N, temperature, brane tension and gravitational coupling. We also characterize the horizon radius, measured in the metric natural to the branes, with the thermal vev of the scalars. For both quantities we find agreement with the corresponding supergravity black brane results. Surprisingly, beyond the physical parameters, we are naturally able to reproduce certain irrational factors such as πs. We comment on how these ideas may explain why black hole thermodynamics arises in gauge theories with holographic duals at finite temperature.

$P-V$ criticality of a specific black hole in $f(R)$ gravity coupled with Yang-Mills field arXiv

CERN Document Server

Övgün, Ali

In this paper, we study the $P-v$ criticality of a specific charged AdS type black hole (SBH) in $f(R)$ gravity coupled with Yang-Mills field. In the extended phase space, we treat the cosmological constant as a thermodynamic pressure. After we study the various thermodynamical quantities, we show that the thermodynamic properties of the SBH behave as a Van der Waals liquid-gas system at the critical points and there is a first order phase transition between small-large SBH.

The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of p+-p-n-n+ Wz-GaN Reach-Through Avalanche Photodiodes

Directory of Open Access Journals (Sweden)

Moumita Ghosh

2013-01-01

Full Text Available The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of p+-p-n-n+ structured Wurtzite-GaN (Wz-GaN reach-through avalanche photodiodes (RAPDs. The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM and Flip Chip (FC are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and 9.4144×103, respectively, due to hole dominated photocurrent (i.e., in FC structure; while those are 480.56 mA W−1 and 7.8800×103, respectively, due to electron dominated photocurrent (i.e., in TM structure at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the n+-layer instead of p+-layer of the device.

Liver/kidney microsomal antibody type 1 and liver cytosol antibody type 1 concentrations in type 2 autoimmune hepatitis

OpenAIRE

Muratori, L; Cataleta, M; Muratori, P; Lenzi, M; Bianchi, F

1998-01-01

Background—Liver/kidney microsomal antibody type 1 (LKM1) and liver cytosol antibody type 1 (LC1) are the serological markers of type 2 autoimmune hepatitis (AIH). 
Aims—Since LKM1 and LC1 react against two distinct liver specific autoantigens (cytochrome P450IID6 (CYP2D6) and a 58 kDa cytosolic polypeptide respectively), the aim was to see whether LKM1 and LC1 concentrations correlate with liver disease activity. 
Patients—Twenty one patients with type 2 AIH were studied. 
Methods—A...

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

International Nuclear Information System (INIS)

Armstrong, A.; Caudill, J.; Ringel, S. A.; Corrion, A.; Poblenz, C.; Mishra, U. K.; Speck, J. S.

2008-01-01

Deep level defects in p-type GaN:Mg grown by molecular beam epitaxy were characterized using steady-state photocapacitance and deep level optical spectroscopy (DLOS). Low frequency capacitance measurements were used to alleviate dispersion effects stemming from the deep Mg acceptor. Use of DLOS enabled a quantitative survey of both deep acceptor and deep donor levels, the latter being particularly important due to the limited understanding of minority carrier states for p-type GaN. Simultaneous electron and hole photoemissions resulted in a convoluted deep level spectrum that was decoupled by emphasizing either majority or minority carrier optical emission through control of the thermal filling time conditions. In this manner, DLOS was able to resolve and quantify the properties of deep levels residing near both the conduction and valence bandedges in the same sample. Bandgap states through hole photoemission were observed at E v +3.05 eV, E v +3.22 eV and E v +3.26 eV. Additionally, DLOS revealed levels at E c -3.24 eV and E c -2.97 eV through electron emission to the conduction band with the former attributed to the Mg acceptor itself. The detected deep donor concentration is less than 2% of activated [Mg] and demonstrates the excellent quality of the film

Search for black holes

International Nuclear Information System (INIS)

Cherepashchuk, Anatolii M

2003-01-01

Methods and results of searching for stellar mass black holes in binary systems and for supermassive black holes in galactic nuclei of different types are described. As of now (June 2002), a total of 100 black hole candidates are known. All the necessary conditions Einstein's General Relativity imposes on the observational properties of black holes are satisfied for candidate objects available, thus further assuring the existence of black holes in the Universe. Prospects for obtaining sufficient criteria for reliably distinguishing candidate black holes from real black holes are discussed. (reviews of topical problems)

A discussion about maximum uranium concentration in digestion solution of U3O8 type uranium ore concentrate

International Nuclear Information System (INIS)

Xia Dechang; Liu Chao

2012-01-01

On the basis of discussing the influence of single factor on maximum uranium concentration in digestion solution,the influence degree of some factors such as U content, H 2 O content, mass ratio of P and U was compared and analyzed. The results indicate that the relationship between U content and maximum uranium concentration in digestion solution was direct ratio, while the U content increases by 1%, the maximum uranium concentration in digestion solution increases by 4.8%-5.7%. The relationship between H 2 O content and maximum uranium concentration in digestion solution was inverse ratio, the maximum uranium concentration in digestion solution decreases by 46.1-55.2 g/L while H 2 O content increases by 1%. The relationship between mass ratio of P and U and maximum uranium concentration in digestion solution was inverse ratio, the maximum uranium concentration in digestion solution decreases by 116.0-181.0 g/L while the mass ratio of P and U increase 0.1%. When U content equals 62.5% and the influence of mass ratio of P and U is no considered, the maximum uranium concentration in digestion solution equals 1 578 g/L; while mass ratio of P and U equals 0.35%, the maximum uranium concentration decreases to 716 g/L, the decreased rate is 54.6%, so the mass ratio of P and U in U 3 O 8 type uranium ore concentrate is the main controlling factor. (authors)

Electrochemical determination of ascorbic acid at p-phenylenediamine film-holes modified glassy carbon electrode

Directory of Open Access Journals (Sweden)

Olana Bikila Nagasa

2015-01-01

Full Text Available In this work the determination of ascorbic acid (AA at glassy carbon electrode (GCE modified with a perforated film produced by reduction of diazonium generated in situ from p-phenylenediamine (PD is reported. Holes were intentionally created in the modifier film by stripping a pre-deposited gold nanoparticles. The modified electrodes were electrochemically characterized by common redox probes: hydroquinone, ferrocyanide and hexamineruthenium(III. The cyclic voltammetric and amperometric response of AA using the modified electrodes was compared with that of bare GCE. The bare GCE showed a linear response to AA in the concentration range of 5 mM to 45 mM with detection limit of 1.656 mM and the modified GCE showed a linear response to AA in the concentration range of 5 μM to 45 μM with detection limit of 0.123 μM. The effect of potential intereferents on amperometric signal of AA at the modified GCE was examined and found to be minimal. The inter-electrode reproducibility, stability, and accuracy were determined. The modified electrode showed excellent inter-electrode reproducibility, accuracy and stability. The modified electrode reported is a promising candidate for use in electroanalysis of AA.

Competing p-wave orders

International Nuclear Information System (INIS)

Donos, Aristomenis; Gauntlett, Jerome P; Pantelidou, Christiana

2014-01-01

We construct electrically charged, asymptotically AdS 5 black hole solutions that are dual to d = 4 CFTs in a superfluid phase with either p-wave or (p + ip)-wave order. The two types of black holes have non-vanishing charged two-form in the bulk and appear at the same critical temperature in the unbroken phase. Both the p-wave and the (p + ip)-wave phase can be thermodynamically preferred, depending on the mass and charge of the two-form, and there can also be first order transitions between them. The p-wave black holes have a helical structure and some of them exhibit the phenomenon of pitch inversion as the temperature is decreased. Both the p-wave and the (p + ip)-wave black holes have zero entropy density ground states at zero temperature and we identify some new ground states which exhibit scaling symmetry, including a novel scenario for the emergence of conformal symmetry in the IR. (paper)

Relationship between serum adiponectin concentration and diabetic nephropathy in patients with type 2 diabetes mellitus

International Nuclear Information System (INIS)

Zhu Wei; Yang Yuzhi; Li Xianhou; Feng Kun; Wang Dan

2007-01-01

Objective: To investigate the relationship between serum adiponectin concentration and diabetic nephropathy in patients with type 2 diabetes mellitus. Methods: The serum adiponectin concentrations were measured with RIA in 163 patients with type 2 diabetes mellitus and 50 controls. Results: In the diabetic patients, serum adiponectin concentrations were significantly higher in patients with macro albuminuria (n = 54) than those inpatients with microalbuminuria (n = 57) (P 0.05). Adiponectin concentrations were higher in women than in men, but there was no significant difference (P > 0.05). Conclusion: Serum adiponectin concentrations are increased in type 2 diabetic patients with advanced nephropathy. The kidney seems to be involved in the metabolism and excretion of adiponectin. Adiponectin may play important roles in the onset and development of diabetic nephropathy. (authors)

Extended phase space thermodynamics and P-V criticality: Brans-Dicke-Born-Infeld vs. Einstein-Born-Infeld-dilaton black holes

Energy Technology Data Exchange (ETDEWEB)

Hendi, S.H. [Shiraz University, Physics Department and Biruni Observatory, College of Sciences, Shiraz (Iran, Islamic Republic of); Research Institute for Astronomy and Astrophysics of Maragha (RIAAM), P. O. Box 55134-441, Maragha (Iran, Islamic Republic of); Tad, R.M.; Armanfard, Z.; Talezadeh, M.S. [Shiraz University, Physics Department and Biruni Observatory, College of Sciences, Shiraz (Iran, Islamic Republic of)

2016-05-15

Motivated by a thermodynamic analogy of black holes and Van der Waals liquid/gas systems, in this paper, we study P-V criticality of both dilatonic Born-Infeld black holes and their conformal solutions, Brans-Dicke-Born-Infeld solutions. Due to the conformal constraint, we have to neglect the old Lagrangian of dilatonic Born-Infeld theory and its black hole solutions, and introduce a new one. We obtain spherically symmetric nonlinearly charged black hole solutions in both Einstein and Jordan frames and then we calculate the related conserved and thermodynamic quantities. After that, we extend the phase space by considering the proportionality of the cosmological constant and thermodynamical pressure. We obtain critical values of the thermodynamic coordinates through numerical methods and plot the relevant P-V and G-T diagrams. Investigation of the mentioned diagrams helps us to study the thermodynamical phase transition. We also analyze the effects of varying different parameters on the phase transition of black holes. (orig.)

Quantum Gravity Effect on the Tunneling Particles from 2 + 1-Dimensional New-Type Black Hole

Directory of Open Access Journals (Sweden)

Ganim Gecim

2018-01-01

Full Text Available We investigate the generalized uncertainty principle (GUP effect on the Hawking temperature for the 2 + 1-dimensional new-type black hole by using the quantum tunneling method for both the spin-1/2 Dirac and the spin-0 scalar particles. In computation of the GUP correction for the Hawking temperature of the black hole, we modified Dirac and Klein-Gordon equations. We observed that the modified Hawking temperature of the black hole depends not only on the black hole properties, but also on the graviton mass and the intrinsic properties of the tunneling particle, such as total angular momentum, energy, and mass. Also, we see that the Hawking temperature was found to be probed by these particles in different manners. The modified Hawking temperature for the scalar particle seems low compared with its standard Hawking temperature. Also, we find that the modified Hawking temperature of the black hole caused by Dirac particle’s tunneling is raised by the total angular momentum of the particle. It is diminishable by the energy and mass of the particle and graviton mass as well. These intrinsic properties of the particle, except total angular momentum for the Dirac particle, and graviton mass may cause screening for the black hole radiation.

Serum leptin concentration in patients with type 2 diabetes

Directory of Open Access Journals (Sweden)

Malecha-Jedraszek Arleta

2015-12-01

Full Text Available With the increasing importance of early type 2 diabetes (DM2 and obesity detection, it is useful to reevaluate leptin role in these conditions. Our study aimed at investigating circulating leptin concentrations in a group of patients with DM2, and at assessing in detail whether leptin concentrations correlate with selected biochemical, clinical parameters and markers of systemic inflammation in patients with DM2 and in healthy volunteers. In our work, we analysed samples and data drawn from 71 patients aged 61.4 ± 11.7 years, who have been diagnosed with type 2 diabetes, as well as from a healthy control group (HC consisting of 51 healthy subjects with a mean age of 57.8 ± 13.7 years. Therein, the concentration of leptin in the DM2 patients was significantly higher than in the HC (p < 0.01, with median value of 16.59 (IQR 8.58-33.39 ng/ml in the DM2, vs median value of 6.66 (IQR 4.52-21.40 ng/ml in the HC. In the analysis of variance, higher leptin concentrations were revealed in the DM2 group as compared to the HC, and this figure remained significant after adjusting for gender and age (p < 0.001. Moreover, it was independent of HOMA-IR (p = 0.003. However, the differences in leptin levels between the groups disappeared when additional adjustments for anthropometric parameters (BMI, waist circumference were applied (p = 0.088. Beyond the aforementioned, significant positive correlations were found in the DM 2 group between leptin level and CRP (r=0.256; p < 0.05 and IL-6 (r = 0.345; p < 0.01. Among the selected variables, only gender and BMI were included in the predictive model explaining the variability of leptin, and, in total, were responsible for 72.6% of the original variation of the studied adipocytokine. The results of this study have led to conclusion that leptin may participate in the complex pathogenesis of DM2 and be a predictor of the development of this disease. As higher concentrations of leptin coexist with obesity, and this

Black holes in an expanding universe.

Science.gov (United States)

Gibbons, Gary W; Maeda, Kei-ichi

2010-04-02

An exact solution representing black holes in an expanding universe is found. The black holes are maximally charged and the universe is expanding with arbitrary equation of state (P = w rho with -1 < or = for all w < or = 1). It is an exact solution of the Einstein-scalar-Maxwell system, in which we have two Maxwell-type U(1) fields coupled to the scalar field. The potential of the scalar field is an exponential. We find a regular horizon, which depends on one parameter [the ratio of the energy density of U(1) fields to that of the scalar field]. The horizon is static because of the balance on the horizon between gravitational attractive force and U(1) repulsive force acting on the scalar field. We also calculate the black hole temperature.

Rational evolution of the unusual Y-type oxyanion hole of Rhodococcus sp. CR53 lipase LipR.

Science.gov (United States)

Infanzón, Belén; Sotelo, Pablo H; Martínez, Josefina; Diaz, Pilar

2018-01-01

Rhodococcus sp CR-53 lipase LipR was the first characterized member of bacterial lipase family X. Interestingly, LipR displays some similarity with α/β-hydrolases of the C. antartica lipase A (CAL-A)-like superfamily (abH38), bearing a Y-type oxyanion hole, never found before among bacterial lipases. In order to explore this unusual Y-type oxyanion hole, and to improve LipR performance, two modification strategies based on site directed or saturation mutagenesis were addressed. Initially, a small library of mutants was designed to convert LipR Y-type oxyanion hole (YDS) into one closer to those most frequently found in bacteria (GGG(X)). However, activity was completely lost in all mutants obtained, indicating that the Y-type oxyanion hole of LipR is required for activity. A second approach was addressed to modify the two main oxyanion hole residues Tyr 110 and Asp 111 , previously described for CAL-A as the most relevant amino acids involved in stabilization of the enzyme-substrate complex. A saturation mutagenesis library was prepared for each residue (Tyr 110 and Asp 111 ), and activity of the resulting variants was assayed on different chain length substrates. No functional LipR variants could be obtained when Tyr 110 was replaced by any other amino acids, indicating that this is a crucial residue for catalysis. However, among the Asp 111 variants obtained, LipR D111G produced a functional enzyme. Interestingly, this LipR-YGS variant showed less activity than wild type LipR on short- or mid- chain substrates but displayed a 5.6-fold increased activity on long chain length substrates. Analysis of the 3D model and in silico docking studies of this enzyme variant suggest that substitution of Asp by Gly produces a wider entrance tunnel that would allow for a better and tight accommodation of larger substrates, thus justifying the experimental results obtained. Copyright © 2017 Elsevier Inc. All rights reserved.

Hole mobility enhancement and p -doping in monolayer WSe2 by gold decoration

International Nuclear Information System (INIS)

Chen, Chang-Hsiao; Wu, Chun-Lan; Kumar, Pushpendra; Pu, Jiang; Takenobu, Taishi; Chiu, Ming-Hui; Li, Lain-Jong

2014-01-01

Tungsten diselenide (WSe 2 ) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p–n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe 2 monolayer, where a more p-typed WSe 2 field effect transistor is realized by electron transfer from the WSe 2 to the gold (Au) decorated on the WSe 2 surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe 2 monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ∼100 (cm 2 /Vs) and the near ideal subthreshold swing of ∼60 mV/decade and high on/off current ratio of >10 6 are observed. The Au deposited on the WSe 2 also serves as a protection layer to prevent a reaction between the WSe 2 and the environment, making the doping stable and promising for future scalable fabrication. (paper)

Doping process of p-type GaN nanowires: A first principle study

Science.gov (United States)

Xia, Sihao; Liu, Lei; Diao, Yu; Feng, Shu

2017-10-01

The process of p-type doping for GaN nanowires is investigated using calculations starting from first principles. The influence of different doping elements, sites, types, and concentrations is discussed. Results suggest that Mg is an optimal dopant when compared to Be and Zn due to its stronger stability, whereas Be atoms are more inclined to exist in the interspace of a nanowire. Interstitially-doped GaN nanowires show notable n-type conductivity, and thus, Be is not a suitable dopant, which is to be expected since systems with inner substitutional dopants are more favorable than those with surface substitutions. Both interstitial and substitutional doping affect the atomic structure near dopants and induce charge transfer between the dopants and adjacent atoms. By altering doping sites and concentrations, nanowire atomic structures remain nearly constant. Substitutional doping models show p-type conductivity, and Mg-doped nanowires with doping concentrations of 4% showing the strongest p-type conductivity. All doping configurations are direct bandgap semiconductors. This study is expected to direct the preparation of high-quality GaN nanowires.

Three-dimensional hole transport in nickel oxide by alloying with MgO or ZnO

Science.gov (United States)

Alidoust, Nima; Carter, Emily A.

2015-11-01

It has been shown previously that the movement of a hole in nickel oxide is confined to two dimensions, along a single ferromagnetic plane. Such confinement may hamper hole transport when NiO is used as a p-type transparent conductor in various solar energy conversion technologies. Here, we use the small polaron model, along with unrestricted Hartree-Fock and complete active space self-consistent field calculations to show that forming substitutional MxNi1-xO alloys with M = Mg or Zn reduces the barrier for movement of a hole away from the ferromagnetic plane to which it is confined. Such reduction occurs for hole transfer alongside one or two M ions that have been substituted for Ni ions. Furthermore, the Mg and Zn ions do not trap holes on O sites in their vicinity, and NiO's transparency is preserved upon forming the alloys. Thus, forming MxNi1-xO alloys with M = Mg or Zn may enhance NiO's potential as a p-type transparent conducting oxide, by disrupting the two-dimensional confinement of holes in pure NiO.

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

Science.gov (United States)

Chang, Yuan-Ming; Yang, Shih-Hsien; Lin, Che-Yi; Chen, Chang-Hung; Lien, Chen-Hsin; Jian, Wen-Bin; Ueno, Keiji; Suen, Yuen-Wuu; Tsukagoshi, Kazuhito; Lin, Yen-Fu

2018-03-01

Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe 2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe 2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe 2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe 2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe 2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe 2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Response function of a p type - HPGe detector

International Nuclear Information System (INIS)

Lopez-Pino, Neivy; Cabral, Fatima Padilla; D'Alessandro, Katia; Maidana, Nora Lia; Vanin, Vito Roberto

2011-01-01

The response function of a HPGe detector depends on Ge crystal dimensions and dead layers thicknesses; most of them are not given by the manufacturers or change with detector damage from neutrons or contact with the atmosphere and therefore must be experimentally determined. The response function is obtained by a Monte-Carlo simulation procedure based on the Ge crystal characteristics. In this work, a p-type coaxial HPGe detector with 30% efficiency, manufactured in 1989, was investigated. The crystal radius and length and the inner hole dimensions were obtained scanning the capsule both in the radial and axial directions using 4 mm collimated beams from 137 Cs, 207 Bi point sources placed on a x-y table in steps of 2,00 mm. These dimensions were estimated comparing the experimental peak areas with those obtained by simulation using several hole configurations. In a similar procedure, the frontal dead layer thickness was determined using 2 mm collimated beams of the 59 keV gamma-rays from 241 Am and 81 keV from 133 Ba sources hitting the detector at 90 deg and 45 deg with respect to the capsule surface. The Monte Carlo detector model included, besides the crystal, hole and capsules sizes, the Ge dead-layers. The obtained spectra were folded with a gaussian resolution function to account for electronic noise. The comparison of simulated and experimental response functions for 4 mm collimated beams of 60 Co, 137 Cs, and 207 Bi points sources placed at distances of 7, 11 and 17 cm from the detector end cap showed relative deviations of about 10% in general and below 10% in the peak. The frontal dead layer thickness determined by our procedure was different from that specified by the detector manufacturer. (author)

Alternative p-doped hole transport material for low operating voltage and high efficiency organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Murawski, Caroline, E-mail: caroline.murawski@iapp.de; Fuchs, Cornelius; Hofmann, Simone; Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); Gather, Malte C. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, KY16 9SS Scotland (United Kingdom)

2014-09-15

We investigate the properties of N,N′-[(Diphenyl-N,N′-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine (BF-DPB) as hole transport material (HTL) in organic light-emitting diodes (OLEDs) and compare BF-DPB to the commonly used HTLs N,N,N′,N′-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), 2,2′,7,7′-tetrakis(N,N′-di-p-methylphenylamino)-9,9′-spirobifluorene (Spiro-TTB), and N,N′-di(naphtalene-1-yl)-N,N′-diphenylbenzidine (NPB). The influence of 2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ p-dopant) concentration in BF-DPB on the operation voltage and efficiency of red and green phosphorescent OLEDs is studied; best results are achieved at 4 wt. % doping. Without any light extraction structure, BF-DPB based red (green) OLEDs achieve a luminous efficacy of 35 .1 lm/W (74 .0 lm/W) at 1000 cd/m{sup 2} and reach a very high brightness of 10 000 cd/m{sup 2} at a very low voltage of 3.2 V (3.1 V). We attribute this exceptionally low driving voltage to the high ionization potential of BF-DPB which enables more efficient hole injection from BF-DPB to the adjacent electron blocking layer. The high efficiency and low driving voltage lead to a significantly lower luminous efficacy roll-off compared to the other compounds and render BF-DPB an excellent HTL material for highly efficient OLEDs.

Electrical Properties Of Amorphous Selenium (aSe)/p-Type Silicon ...

African Journals Online (AJOL)

aSe) on four chemically etched p-type silicon crystals (pSi) each of 5Ω-cm resistivity and carrier concentration of 2.8x1015cm-3. Two of the pSi crystals have surface orientation of (111) while the other two crystals have (100) surface orientation.

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

International Nuclear Information System (INIS)

Ji Xiao-Li; Liao Yi-Ming; Yan Feng; Shi Yi; Zhang Guan; Guo Qiang

2011-01-01

Negative bias temperature instability (NBTI) in ultrathin-plasma-nitrided-oxide (PNO) based p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) is investigated at temperatures ranging from 220K to 470K. It is found that the threshold voltage V T degradation below 290 K is dominated by the hole trapping process. Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap. The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Exciton and Hole-Transfer Dynamics in Polymer: Fullerene Blends

Directory of Open Access Journals (Sweden)

van Loosdrecht P. H. M.

2013-03-01

Full Text Available Ultrafast hole transfer dynamics from fullerene derivative to polymer in bulk heterojunction blends are studied with visible-pump - IR-probe spectroscopy. The hole transfer process is found to occur in 50/300 fs next to the interface, while a longer 15-ps time is attributed to exciton diffusion towards interface in PC71BM domains. High polaron generation efficiency in P3HT blends indicates excellent intercalation between the polymer and the fullerene even at highest PC71BM concentration thereby yielding a valuable information on the blend morphology.

Approaching the Hole Mobility Limit of GaSb Nanowires.

Science.gov (United States)

Yang, Zai-xing; Yip, SenPo; Li, Dapan; Han, Ning; Dong, Guofa; Liang, Xiaoguang; Shu, Lei; Hung, Tak Fu; Mo, Xiaoliang; Ho, Johnny C

2015-09-22

In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin and uniform nanowires (NWs), there is limited report until now addressing their diameter-dependent properties and their hole mobility limit in this important one-dimensional material system, where all these are essential information for the deployment of GaSb NWs in various applications. Here, by employing the newly developed surfactant-assisted chemical vapor deposition, high-quality and uniform GaSb NWs with controllable diameters, spanning from 16 to 70 nm, are successfully prepared, enabling the direct assessment of their growth orientation and hole mobility as a function of diameter while elucidating the role of sulfur surfactant and the interplay between surface and interface energies of NWs on their electrical properties. The sulfur passivation is found to efficiently stabilize the high-energy NW sidewalls of (111) and (311) in order to yield the thin NWs (i.e., 40 nm in diameters) would grow along the most energy-favorable close-packed planes with the orientation of ⟨111⟩, supported by the approximate atomic models. Importantly, through the reliable control of sulfur passivation, growth orientation and surface roughness, GaSb NWs with the peak hole mobility of ∼400 cm(2)V s(-1) for the diameter of 48 nm, approaching the theoretical limit under the hole concentration of ∼2.2 × 10(18) cm(-3), can be achieved for the first time. All these indicate their promising potency for utilizations in different technological domains.

Valence band states in Si-based p-type delta-doped field effect transistors

International Nuclear Information System (INIS)

Martinez-Orozco, J C; Vlaev, Stoyan J

2009-01-01

We present tight-binding calculations of the hole level structure of δ-doped Field Effect Transistor in a Si matrix within the first neighbors sp 3 s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type δ-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p 2d ) of the p-type δ-doped well and the contact voltage (V c ). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

Valence band states in Si-based p-type delta-doped field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

2009-05-01

We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

Investigation of Landau level spin reversal in (110) oriented p-type GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Isik, Nebile

2009-09-01

In this thesis, the Landau level crossing or anticrossing of hole levels has been investigated in p-type GaAs 400 Aa wide quantum wells. In magneto-transport measurements, this is evidenced with the presence of an anomalous peak in the longitudinal resistance measurements at {nu}=1. In the transversal resistance measurements, no signature of this anomalous peak is observed. By increasing the hole density in the quantum well by applying a top gate voltage, the position of the anomalous peak shifts to higher magnetic fields. At very high densities, anomalous peak disappears. By applying a back gate voltage, the electric field in the quantum well is tuned. A consequence is that the geometry of the quantum well is tuned from square to triangular. The anomalous peak position is shown to depend also on the back gate voltage applied. Temperature dependence of the peak height is consistent with thermal activation energy gap ({delta}/2= 135 {mu}eV). The activation energy gap as a function of the magnetic field has a parabolic like dependence, with the minimum of 135 {mu}eV at 4 T. The peak magnitude is observed to decrease with increasing temperature. An additional peak is observed at {nu}=2 minimum. This additional peak at {nu}=2 might be due to the higher Landau level crossing. The p-type quantum wells have been investigated by photoluminescence spectroscopy, as a function of the magnetic field. The polarization of the emitted light has been analyzed in order to distinguish between the transitions related to spin of electron {+-} 1/2 and spin of hole -+ 3/2. The transition energies of the lowest electron Landau levels with spin {+-} 1/2 and hole Landau levels with spin -+ 3/2 versus magnetic field show crossing at 4 T. The heavy hole Landau levels with spins {+-} 3/2 are obtained by the substraction of transition energies from the sum of lowest electron Landau level energy and the energy gap of GaAs. The heavy hole Landau levels show a crossing at 4 T. However, due to the

Characterization of plasma etching damage on p-type GaN using Schottky diodes

International Nuclear Information System (INIS)

Kato, M.; Mikamo, K.; Ichimura, M.; Kanechika, M.; Ishiguro, O.; Kachi, T.

2008-01-01

The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching

Salivary pH as a marker of plasma adiponectin concentrations in Women.

Science.gov (United States)

Tremblay, Monique; Loucif, Yacine; Methot, Julie; Brisson, Diane; Gaudet, Daniel

2012-02-03

Plasma adiponectin is a significant correlate of the pro-inflammatory cardiometabolic risk profile associated with obesity and type 2 diabetes. Salivary pH is influenced by several cardiometabolic risk components such as inflammation, oxidation and numerous oral and systemic health modulators, including the menopausal status. This study aimed to assess the association between plasma adiponectin concentrations and salivary pH in women according to the menopausal status. Unstimulated saliva collection was performed in 151 Caucasian women of French-Canadian origin (53 premenopausal women (PMW) and 98 menopausal women (MW)). Student's t test, ANOVA and linear regression models were used to assess the association between plasma adiponectin concentrations and salivary pH. Plasma adiponectin levels increased as a function of salivary pH in the whole sample and among MW (r = 0.29 and r = 0.36, p salivary pH (R2) was 10.8% (p salivary pH quartiles (p = 0.005). These results suggest that salivary pH is a significant correlate of plasma adiponectin levels in women. With the increasing prevalence of type 2 diabetes and obesity, new technologies should be developed to more easily monitor health status, disease onset and progression. Salivary pH, a simple, inexpensive and non-invasive measure, could be a very promising avenue.

Electronic structure of p type Delta doped systems

International Nuclear Information System (INIS)

Gaggero S, L.M.; Perez A, R.

1998-01-01

We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

International Nuclear Information System (INIS)

Takagi, Shinichi; Tezuka, T.; Irisawa, T.; Nakaharai, S.; Maeda, T.; Numata, T.; Ikeda, K.; Sugiyama, N.

2006-01-01

Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on high hole mobility p-MOSFETs using global/local SiGe or Ge channels. There are two directions for introducing SiGe or Ge channels into Si CMOS platform. One is to use SiGe or Ge global substrates and the other is to form SiGe or Ge-channel regions locally on Si wafers. In both cases, the Ge condensation technique, where Ge-channel layers are formed by oxidizing SiGe films on SOI substrates, are effectively utilized. As for the global technologies, ultrathin GOI substrates are prepared and used to fabricate high mobility GOI p-MOSFETs. As for the local technologies, SGOI or GOI channels are formed locally in the active area of p-MOSFETs on SOI wafers. It is shown that the hole mobility enhancement factor of as high as 10 is obtained in locally fabricated p-MOSFETs through the effects of high-Ge content and the compressive strain. Furthermore, the local Ge-channel technologies are combined with global SiGe or Ge substrates for pursuing the optimal and individual design of n-MOSFETs and p-MOSFETs on a single Si wafer. The CMOS device composed of strained-Si n-MOSFETs and SGOI p-MOSFETs is successfully integrated on a same wafer, which is a promising CMOS structure under deep sub 100 nm technology nodes

Liver/kidney microsomal antibody type 1 and liver cytosol antibody type 1 concentrations in type 2 autoimmune hepatitis.

Science.gov (United States)

Muratori, L; Cataleta, M; Muratori, P; Lenzi, M; Bianchi, F B

1998-05-01

Liver/kidney microsomal antibody type 1 (LKM1) and liver cytosol antibody type 1 (LC1) are the serological markers of type 2 autoimmune hepatitis (AIH). Since LKM1 and LC1 react against two distinct liver specific autoantigens (cytochrome P450IID6 (CYP2D6) and a 58 kDa cytosolic polypeptide respectively), the aim was to see whether LKM1 and LC1 concentrations correlate with liver disease activity. Twenty one patients with type 2 AIH were studied. All sera were tested by indirect immunofluorescence, counterimmunoelectrophoresis, and immunoblotting visualised by enhanced chemiluminescence. To evaluate LKM1 and LC1 levels, the 50 kDa microsomal reactivity (corresponding to CYP2D6) and the 58 kDa cytosolic reactivity were quantified by densitometric analysis. Seven patients were positive for LKM1, nine for LC1, and five for both. Serial serum samples at onset and during immunosuppressive treatment were analysed in 13 patients (four positive for LKM1, six positive for LC1 and three positive for both). During remission, LKM1 concentration remained essentially unchanged in six of seven patients, and decreased in only one. Conversely, in two of nine patients, LC1 was completely lost, and, in the remaining seven, LC1 concentration was reduced by more than 50%. After immunosuppression tapering or withdrawal, flare ups of liver necrosis ensued with increasing LC1 concentration, but not LKM1. LC1 concentration, at variance with that of LKM1, parallels liver disease activity, and its participation in the pathogenic mechanisms of liver injury can be hypothesised.

STUDY OF ELECTRICAL CHARACTERISTIC OF NEW P-TYPE TRENCHED UMOSFET

OpenAIRE

Akansha Ephraim*, Neelesh Agrawal, Anil Kumar, A.K. Jaiswal

2017-01-01

In this paper p-type trenched UMOSFET was designed without super junction and constructed like any other conventional MOSFET. Characteristic curve was studied between drain current verses drain voltage and drain current verses gate voltage. The trench was designed under TCAD simulation tool Silvaco software using etching process. The specific channel length of the p-type UMOSFET has been concentrated as 0.9 microns. The device structures are designed using Silvaco Athena and characteristics w...

Heterogeneous photocatalytic degradation of p-toluenesulfonic acid using concentrated solar radiation in slurry photoreactor

International Nuclear Information System (INIS)

Kamble, Sanjay P.; Sawant, Sudhir B.; Pangarkar, Vishwas G.

2007-01-01

In this work, the photocatalytic degradation (PCD) of p-toluenesulfonic acid (p-TSA) in batch reactor using concentrated solar radiation was investigated. The effect of the various operating parameters such as initial concentration of substrate, catalyst loading, solution pH and types of ions on photocatalytic degradation has been studied in a batch reactor to derive the optimum conditions. The rate of photocatalytic degradation was found to be maximum at the self pH (pH 3.34) of p-TSA. It was also observed that in the presence of anions and cations, the rate of PCD decreases drastically. The kinetics of photocatalytic degradation of p-TSA was studied. The PCD of p-TSA was also carried at these optimized conditions in a bench scale slurry bubble column reactor using concentrated solar radiation

Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

Science.gov (United States)

Giraud, Paul; Hou, Bo; Pak, Sangyeon; Inn Sohn, Jung; Morris, Stephen; Cha, SeungNam; Kim, Jong Min

2018-02-01

We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V-1 s-1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W-1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.

Salivary pH as a marker of plasma adiponectin concentrations in Women

Directory of Open Access Journals (Sweden)

Tremblay Monique

2012-02-01

Full Text Available Abstract Background Plasma adiponectin is a significant correlate of the pro-inflammatory cardiometabolic risk profile associated with obesity and type 2 diabetes. Salivary pH is influenced by several cardiometabolic risk components such as inflammation, oxidation and numerous oral and systemic health modulators, including the menopausal status. This study aimed to assess the association between plasma adiponectin concentrations and salivary pH in women according to the menopausal status. Method Unstimulated saliva collection was performed in 151 Caucasian women of French-Canadian origin (53 premenopausal women (PMW and 98 menopausal women (MW. Student's t test, ANOVA and linear regression models were used to assess the association between plasma adiponectin concentrations and salivary pH. Results Plasma adiponectin levels increased as a function of salivary pH in the whole sample and among MW (r = 0.29 and r = 0.36, p 2 was 10.8% (p Conclusions These results suggest that salivary pH is a significant correlate of plasma adiponectin levels in women. With the increasing prevalence of type 2 diabetes and obesity, new technologies should be developed to more easily monitor health status, disease onset and progression. Salivary pH, a simple, inexpensive and non-invasive measure, could be a very promising avenue.

Selection of peripheral intravenous catheters with 24-gauge side-holes versus those with 22-gauge end-hole for MDCT: A prospective randomized study

Energy Technology Data Exchange (ETDEWEB)

Tamura, Akio, E-mail: a.akahane@gmail.com [Department of Radiology, Iwate Medical University School of Medicine, 19-1 Uchimaru, Morioka 020-8505 (Japan); Kato, Kenichi, E-mail: kkato@iwate-med.ac.jp [Department of Radiology, Iwate Medical University School of Medicine, 19-1 Uchimaru, Morioka 020-8505 (Japan); Kamata, Masayoshi, E-mail: kamataaoi@yahoo.co.jp [Iwate Medical University Hospital, 19-1 Uchimaru, Morioka 020-8505 (Japan); Suzuki, Tomohiro, E-mail: suzukitomohiro123@gmail.com [Department of Radiology, Iwate Medical University School of Medicine, 19-1 Uchimaru, Morioka 020-8505 (Japan); Suzuki, Michiko, E-mail: mamimichiko@me.com [Department of Radiology, Iwate Medical University School of Medicine, 19-1 Uchimaru, Morioka 020-8505 (Japan); Nakayama, Manabu, E-mail: gakuymgt@yahoo.co.jp [Department of Radiology, Iwate Medical University School of Medicine, 19-1 Uchimaru, Morioka 020-8505 (Japan); Tomabechi, Makiko, E-mail: mtomabechi@mac.com [Department of Radiology, Iwate Medical University School of Medicine, 19-1 Uchimaru, Morioka 020-8505 (Japan); Nakasato, Tatsuhiko, E-mail: nakasato77@gmail.com [Department of Radiology, Southern Tohoku Research Institute for Neuroscience, 7-115 Yatsuyamada, Koriyama 963-8563 (Japan); Ehara, Shigeru, E-mail: ehara@iwate-med.ac.jp [Department of Radiology, Iwate Medical University School of Medicine, 19-1 Uchimaru, Morioka 020-8505 (Japan)

2017-02-15

Highlights: • We compared 24-gauge side-hole and conventional 22-gauge end-hole catheters in MDCT. • The 24-gauge side-hole catheter is noninferior to the 22-gauge end-hole catheter. • The 24-gauge side-hole catheter is safe and facilitates optimal enhancement quality. • The 24-gauge side-hole catheter is suitable for patients with narrow or fragile veins. - Abstract: Purpose: To compare the 24-gauge side-holes catheter and conventional 22-gauge end-hole catheter in terms of safety, injection pressure, and contrast enhancement on multi-detector computed tomography (MDCT). Materials & methods: In a randomized single-center study, 180 patients were randomized to either the 24-gauge side-holes catheter or the 22-gauge end-hole catheter groups. The primary endpoint was safety during intravenous administration of contrast material for MDCT, using a non-inferiority analysis (lower limit 95% CI greater than −10% non-inferiority margin for the group difference). The secondary endpoints were injection pressure and contrast enhancement. Results: A total of 174 patients were analyzed for safety during intravenous contrast material administration for MDCT. The overall extravasation rate was 1.1% (2/174 patients); 1 (1.2%) minor episode occurred in the 24-gauge side-holes catheter group and 1 (1.1%) in the 22-gauge end-hole catheter group (difference: 0.1%, 95% CI: −3.17% to 3.28%, non-inferiority P = 1). The mean maximum pressure was higher with the 24-gauge side-holes catheter than with the 22-gauge end-hole catheter (8.16 ± 0.95 kg/cm{sup 2} vs. 4.79 ± 0.63 kg/cm{sup 2}, P < 0.001). The mean contrast enhancement of the abdominal aorta, celiac artery, superior mesenteric artery, and pancreatic parenchyma in the two groups were not significantly different. Conclusion: In conclusion, our study showed that the 24-gauge side-holes catheter is safe and suitable for delivering iodine with a concentration of 300 mg/mL at a flow-rate of 3 mL/s, and it may contribute to

Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

Science.gov (United States)

Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

2015-05-01

We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)

Energy Technology Data Exchange (ETDEWEB)

Poklonski, N. A., E-mail: poklonski@bsu.by; Vyrko, S. A.; Poklonskaya, O. N. [Belarusian State University (Belarus); Zabrodskii, A. G. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2016-06-15

The electrostatic model of ionization equilibrium between hydrogen-like acceptors and v-band holes in crystalline covalent p-type semiconductors is developed. The range of applicability of the model is the entire insulator side of the insulator–metal (Mott) phase transition. The density of the spatial distribution of acceptor- and donor-impurity atoms and holes over a crystal was assumed to be Poissonian and the fluctuations of their electrostatic potential energy, to be Gaussian. The model takes into account the effect of a decrease in the energy of affinity of an ionized acceptor to a v-band hole due to Debye–Hückel ion screening by both free v-band holes and localized holes hopping over charge states (0) and (–1) of acceptors in the acceptor band. All donors are in charge state (+1) and are not directly involved in the screening, but ensure the total electroneutrality of a sample. In the quasiclassical approximation, analytical expressions for the root-mean-square fluctuation of the v-band hole energy W{sub p} and effective acceptor bandwidth W{sub a} are obtained. In calculating W{sub a}, only fluctuations caused by the Coulomb interaction between two nearest point charges (impurity ions and holes) are taken into account. It is shown that W{sub p} is lower than W{sub a}, since electrostatic fluctuations do not manifest themselves on scales smaller than the average de Broglie wavelength of a free hole. The delocalization threshold for v-band holes is determined as the sum of the diffusive-percolation threshold and exchange energy of holes. The concentration of free v-band holes is calculated at the temperature T{sub j} of the transition from dc band conductivity to conductivity implemented via hopping over acceptor states, which is determined from the virial theorem. The dependence of the differential energy of the thermal ionization of acceptors at the temperature 3T{sub j}/2 on their concentration N and degree of compensation K (the ratio between the

Possibility for hole doping into amorphous InGaZnO4 films prepared by RF sputtering

International Nuclear Information System (INIS)

Kobayashi, Kenkichiro; Kohno, Yoshiumi; Tomita, Yasumasa; Maeda, Yasuhisa; Matsushima, Shigenori

2011-01-01

Amorphous InGaZnO 4 (IGZO) films codoped with Al and N atoms were prepared by sputtering of targets consisting of IGZO and AlN powders in Ar + O 2 atmospheres. No hole-conductivity is seen in films deposited at 2 x 10 -3 Torr, whereas hole-conductivity is found in films deposited at 2 x 10 -2 Torr at radio frequency powers of 60-80 W in 0.3-0.6% O 2 atmospheres. The amorphous p-type IGZO film has the resistivity of 210 Wcm, hole-density of 7.5 x 10 17 cm -3 , and mobility of 0.4 cm 2 /Vs. The rectification characteristic is obtained for a device constructed from Au, amorphous p-type IGZO, and amorphous n-type IGZO. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

International Nuclear Information System (INIS)

Bennett, S E; Kappers, M J; Barnard, J S; Humphreys, C J; Oliver, R A; Clifton, P H; Ulfig, R M

2010-01-01

P-type conducting layers are critical in GaN-based devices such as LEDs and laser diodes. Such layers are often produced by doping GaN with Mg, but the hole concentration can be enhanced using AlGaN/GaN p-type superlattices by exploiting the built-in polarisation fields. A Mg-doped AlGaN/GaN superlattice was studied using SIMS. Although the AlGaN and GaN were nominally doped to the same level, the SIMS data suggested a difference in doping density between the two materials. Atom probe tomography was then used to investigate the Mg distribution. The superlattice repeats were clearly visible, as expected and, in addition, significant Mg clustering was observed in both the GaN and AlGaN layers. There were many more Mg clusters in the AlGaN layers than the GaN layers, accounting for the difference in doping density suggested by SIMS. To evaluate the structural accuracy of the atom probe reconstruction, layer thicknesses from the atom probe were compared with STEM images. Finally, future work is proposed to investigate the Mg clusters in the TEM.

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Energy Technology Data Exchange (ETDEWEB)

Saji, Kachirayil J. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Govt. Victoria College, University of Calicut, Palakkad 678 001 (India); Venkata Subbaiah, Y.P. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Yogi Vemana University, Kadapa, Andhra Pradesh 516003 (India); Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

2016-04-30

Tin monoxide (SnO) is considered as one of the most important p-type oxides available to date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) and a direct bandgap (~ 2.8 eV) with quite high hole mobility (~ 7 cm{sup 2}/Vs) values. Moreover, the hole density in these films can be tuned from 10{sup 15}–10{sup 19} cm{sup −3} just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p–n heterostructure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices. - Highlights: • We reviewed recent developments on p-type SnO thin film research. • Discussed the optical and electrical properties of SnO thin films • Bipolar conduction in SnO is discussed. • Optoelectronic properties of SnO–ZnO composite system are discussed. • Proposed SnO–ZnO heterojunction band structure.

Detection of Enhanced Central Mass-to-light Ratios in Low-mass Early-type Galaxies: Evidence for Black Holes?

Science.gov (United States)

Pechetti, Renuka; Seth, Anil; Cappellari, Michele; McDermid, Richard; den Brok, Mark; Mieske, Steffen; Strader, Jay

2017-11-01

We present dynamical measurements of the central mass-to-light ratio (M/L) of a sample of 27 low-mass early-type {{ATLAS}}3{{D}} galaxies. We consider all {{ATLAS}}3{{D}} galaxies with 9.7 text{}}M/L{{s}} are higher than dynamical {\\text{}}M/L{{s}} derived at larger radii and stellar population estimates of the galaxy centers in ˜80% of galaxies, with a median enhancement of ˜14% and a statistical significance of 3.3σ. We show that the enhancement in the central M/L is best described either by the presence of black holes in these galaxies or by radial initial mass function variations. Assuming a black hole model, we derive black hole masses for the sample of galaxies. In two galaxies, NGC 4458 and NGC 4660, the data suggest significantly overmassive black holes, while in most others only upper limits are obtained. We also show that the level of M/L enhancements we see in these early-type galaxy nuclei are consistent with the larger enhancements seen in ultracompact dwarf galaxies (UCDs), supporting the scenario where massive UCDs are created by stripping galaxies of these masses.

Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts

Science.gov (United States)

Iikawa, F.; Donchev, V.; Ivanov, Ts; Dias, G. O.; Tizei, L. H. G.; Lang, R.; Heredia, E.; Gomes, P. F.; Brasil, M. J. S. P.; Cotta, M. A.; Ugarte, D.; Martinez Pastor, J. P.; de Lima, M. M., Jr.; Cantarero, A.

2011-02-01

We performed a detailed investigation of the structural and optical properties of multi-layers of InP/GaAs quantum dots, which present a type II interface arrangement. Transmission electronic microscopy analysis has revealed relatively large dots that coalesce forming so-called quantum posts when the GaAs layer between the InP layers is thin. We observed that the structural properties and morphology affect the resulting radiative lifetime of the carriers in our systems. The carrier lifetimes are relatively long, as expected for type II systems, as compared to those observed for single layer InP/GaAs quantum dots. The interface intermixing effect has been pointed out as a limiting factor for obtaining an effective spatial separation of electrons and holes in the case of single layer InP/GaAs quantum-dot samples. In the present case this effect seems to be less critical due to the particular carrier wavefunction distribution along the structures.

Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts

International Nuclear Information System (INIS)

Iikawa, F; Donchev, V; Dias, G O; Tizei, L H G; Lang, R; Gomes, P F; Brasil, M J S P; Cotta, M A; Ugarte, D; Ivanov, Ts; Heredia, E; Martinez Pastor, J P; De Lima, M M Jr; Cantarero, A

2011-01-01

We performed a detailed investigation of the structural and optical properties of multi-layers of InP/GaAs quantum dots, which present a type II interface arrangement. Transmission electronic microscopy analysis has revealed relatively large dots that coalesce forming so-called quantum posts when the GaAs layer between the InP layers is thin. We observed that the structural properties and morphology affect the resulting radiative lifetime of the carriers in our systems. The carrier lifetimes are relatively long, as expected for type II systems, as compared to those observed for single layer InP/GaAs quantum dots. The interface intermixing effect has been pointed out as a limiting factor for obtaining an effective spatial separation of electrons and holes in the case of single layer InP/GaAs quantum-dot samples. In the present case this effect seems to be less critical due to the particular carrier wavefunction distribution along the structures.

Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts

Energy Technology Data Exchange (ETDEWEB)

Iikawa, F; Donchev, V; Dias, G O; Tizei, L H G; Lang, R; Gomes, P F; Brasil, M J S P; Cotta, M A; Ugarte, D [Instituto de Fisica ' Gleb Wataghin' , Unicamp, CP-6165, 13083-970, Campinas-SP (Brazil); Ivanov, Ts [Faculty of Physics, Sofia University, 5, Boulevard J.Bourchier, Sofia-1164 (Bulgaria); Heredia, E [Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, CP 515, 12245-970, Sao Jose dos Campos-SP (Brazil); Martinez Pastor, J P; De Lima, M M Jr; Cantarero, A, E-mail: iikawa@ifi.unicamp.br [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

2011-02-11

We performed a detailed investigation of the structural and optical properties of multi-layers of InP/GaAs quantum dots, which present a type II interface arrangement. Transmission electronic microscopy analysis has revealed relatively large dots that coalesce forming so-called quantum posts when the GaAs layer between the InP layers is thin. We observed that the structural properties and morphology affect the resulting radiative lifetime of the carriers in our systems. The carrier lifetimes are relatively long, as expected for type II systems, as compared to those observed for single layer InP/GaAs quantum dots. The interface intermixing effect has been pointed out as a limiting factor for obtaining an effective spatial separation of electrons and holes in the case of single layer InP/GaAs quantum-dot samples. In the present case this effect seems to be less critical due to the particular carrier wavefunction distribution along the structures.

High-lying neutron hole strengths observed in pick-up reactions

International Nuclear Information System (INIS)

Gales, S.

1980-01-01

Neutron-hole states in orbits well below the Fermi surface have been observed in a number of medium-heavy nuclei from A=90 to 209 using one nucleon pick-up reactions. The excitation energies, angular distributions of such broad and enhanced structures will be discussed. The fragmentation of the neutron-hole strengths as well as the spreading of such simple mode of excitations into more complex states are compared to recent calculations within the quasiparticle-phonon or the single particle-vibration coupling nuclear models. We report on recent measurements of J for inner-hole states in 89 Zr and 115 Sn 119 Sn using the analyzing power of the (p,d) and (d,t) reactions. Large enhancement of cross-sections are observed at high excitation energy in the study of the (p,t) reactions on Zr, Cd, Sn, Te and Sm isotopes. The systematic features of such high-lying excitation are related to the ones observed in one neutron pick-up experiments. The origin of such concentration of two neutron-hole strengths in Cd and Sn isotopes will be discussed. Preliminary results obtained in the study of the (α, 6 He) reaction at 218 MeV incident energy on 90 Zr, 118 Sn and 208 Pb targets are presented and compared to the (p,t) results. Finally the properties of hole-analog states populated in neutron pick-up reactions (from 90 Zr to 208 Pb) will be presented

Hole-spin dynamics in p-doped GaAs/AlGaAs heterostructures; Lochspindynamik in p-dotierten GaAs/AlGaAs-Heterostrukturen

Energy Technology Data Exchange (ETDEWEB)

Kugler, Michael

2012-11-15

This work investigates the spin dynamics of holes in p-doped GaAs/AlGaAs quantum wells (QW) at low temperatures. To examine the energetic structure of the used samples, PL and PLE-spectroscopy were employed. Time resolved Kerr and Faraday-Rotation (TRKR/FR) and 'Resonant Spin Amplification' (RSA) were used to analyse the spin dynamics. First, the signal formation in TRKR/FR and RSA experiments is discussed taking into account the interconnected charge carrier dynamics and spin dynamics of electrons and holes. An excitation energy dependent sign change of the Kerr signal amplitude could be observed, whose energetic position corresponds to an absorption maximum in PLE experiments. This behavior could be explained by an energy dependent splitting of the spin niveaus, which leads to an energy dependence of the Faraday and Kerr signal. Furthermore, two initialization processes were investigated, which could be used to transfer optically generated spin information into the resident hole spin system. This could be achieved by either applying a magnetic field, or by rapid dephasing of hole spins immediately after excitation. Changes in excitation energy, excitation density or temperature could be used to influence the fast dephasing processes and therefore the initial ratio of hole to electron spins. The complex, interconnected charge carrier and spin dynamics of electrons and holes could be accurately reproduced using a rate equation model. This allowed for the extraction of physically relevant parameters like spin lifetimes and g-factors from RSA and TRKR/FR data. An analytical model that was developed at the Wroclaw University of Technology delivered matching results. In the second part of the experimental work, the dependence of the hole spin lifetime and the hole g-factor on various parameters was analysed. Here, the RSA method could for the first time be applied to two-dimensional hole systems, allowing for new insights into the regime of long lived hole

Optical properties of the main electron-irradiation-induced defects in p-type InP: Comparison with calculations for the isolated and acceptor-paired phosphorus vacancy

International Nuclear Information System (INIS)

Bretagnon, T.; Bastide, G.; Rouzeyre, M.; Delerue, C.; Lannoo, M.

1990-01-01

Optical capacitance spectroscopy and thermal annealing of defects have been used to study both the electron traps EP 1 ,E 11 and the dominant hole traps (H 3 -H 4 -H 4 ' ) produced by low-energy electron irradiation in Zn-doped p-type InP. This shows that the 1.1-eV onset in the photoionization cross sections (PCS's) previously attributed to (H 3 -H 4 ) is actually due to the unrelated electron trap EP 1 . The true PCS's σ p 0 of (H 3 ,H 4 ) are compared with PCS tight-binding Green's function calculations to test the earlier proposal that the (H 2 -H 3 -H 4 -H 4 ' ,E 11 ) series might arise from different states of (V P -Zn) complexes. The model yields an effective agreement as concerns both the energy location of the hole-levels series in the forbidden gap and the vanishingly small contribution to the PCS's of the four equivalent L valence-band minima. The proposal that E 11 might correspond to the ionization of an e state of the V P -Zn complex also agrees with the experimental observation of both optical transitions to the valence band and to the conduction band but cannot account for the midgap position of E 11

Inorganic p-Type Semiconductors: Their Applications and Progress in Dye-Sensitized Solar Cells and Perovskite Solar Cells

Directory of Open Access Journals (Sweden)

Ming-Hsien Li

2016-04-01

Full Text Available Considering the increasing global demand for energy and the harmful ecological impact of conventional energy sources, it is obvious that development of clean and renewable energy is a necessity. Since the Sun is our only external energy source, harnessing its energy, which is clean, non-hazardous and infinite, satisfies the main objectives of all alternative energy strategies. With attractive features, i.e., good performance, low-cost potential, simple processibility, a wide range of applications from portable power generation to power-windows, photoelectrochemical solar cells like dye-sensitized solar cells (DSCs represent one of the promising methods for future large-scale power production directly from sunlight. While the sensitization of n-type semiconductors (n-SC has been intensively studied, the use of p-type semiconductor (p-SC, e.g., the sensitization of wide bandgap p-SC and hole transport materials with p-SC have also been attracting great attention. Recently, it has been proved that the p-type inorganic semiconductor as a charge selective material or a charge transport material in organometallic lead halide perovskite solar cells (PSCs shows a significant impact on solar cell performance. Therefore the study of p-type semiconductors is important to rationally design efficient DSCs and PSCs. In this review, recent published works on p-type DSCs and PSCs incorporated with an inorganic p-type semiconductor and our perspectives on this topic are discussed.

Picosecond kinetics of the electron-hole layers formation in wide-bandgap II-VI type-II heterostructures

Energy Technology Data Exchange (ETDEWEB)

Filatov, E.V.; Zaitsev, S.V.; Tartakovskii, I.I.; Maksimov, A.A. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow region (Russian Federation); Yakovlev, D.R. [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Experimentelle Physik II, Technische Universitaet Dortmund (Germany); Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, 38106 Braunschweig (Germany)

2010-06-15

Considerable slowdown of luminescence kinetics of the direct optical transition was discovered in ZnSe/BeTe type-II heterostructures under high levels of optical pumping. The effect is attributed to forming of a potential barrier for holes in the ZnSe layer due to band bending at high densities of spatially separated carriers. That results in a longer time of the photoexcited holes energy relaxation to their ground state in the BeTe layer. The decrease of overlapping of electron and hole wavefunctions in the ZnSe layer in thick ZnSe/BeTe structures at high levels of optical excitation reveals an additional important effect, that leads to sufficient retardation of radiative recombination time for photoexcited carriers (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Breakdown of the one-electron picture in XPS, XES and AES spectra involving 4s and 4p holes in Pd to Xe

International Nuclear Information System (INIS)

Ohno, M.; Wendin, G.

1981-01-01

Certain XES spectra of Pd to Xe have been calculated using diagrammatic many-body theory within the framework of a free atom calculation. Both XPS an XES spectra demonstrate breakdown of the one-electron picture of a 4p hole due to strong dynamical grant-Coster Kronig (gCK) fluctuation and decay processes. For a 4s hole, there is a large energy shift due to gCK fluctuation, but an effective one-electron model of the 4s hole is valid. For elements Cd to Te, gCK fluctuation and decay lead to broad continuance spectrum and breakdown of the 4p model. Breakdown of the one-electron, or even quasi-particle, model must occur when 4s and 4p holes are part of multiple vacancies

Effect of fertilizer type on cadmium and fluorine concentrations in clover herbage

International Nuclear Information System (INIS)

McLaughlin, M.J.

2002-01-01

This study investigated whether changing phosphatic fertilizer type affects the accumulation of cadmium (Cd) and fluorine (F) in pasture herbage. North Carolina phosphate rock and partially acidulated fertilizers derived from this rock generally have higher Cd and F concentrations compared to single superphosphate currently manufactured in Australia. Clover herbage from sites of the National Reactive Phosphate Rock (RPR) trial was collected and analysed for concentrations of Cd (11 sites) and F (4 sites). A comparison was made between pastures fertilized with 4 rates of single superphosphate, North Carolina phosphate rock, and partially acidulated phosphate rock having Cd concentrations of 283, 481, and 420 mg Cd/kg P respectively, and 170, 271, and 274 g F/kg P respectively. One site used Hemrawein (Egypt) phosphate rock (HRP) having a Cd and F concentration of 78 mg Cd/kg P and 256 g F/kg P respectively. To help identify differences in herbage Cd concentrations between sites, unfertilised soils from each site were analyzed for total and extractable Cd contents. At one site Cd concentrations in bulk herbage (clover, grasses and weeds) were related to infestation of the pasture by capeweed (Arctotheca calendula L. Levyns). There were no significant differences between F in herbage from plots fertilized with single superphosphate, partially acidulated phosphate rock or North Carolina phosphate rock, or between sites. Concentrations of F in herbage were low, generally less than 10 mg F /kg. However, there were large differences in Cd concentrations in herbage between sites, while differences between fertilizer treatments were small in comparison. The site differences were only weakly related to total or extractable (0.01 mol/L CaCl 2 ) Cd concentrations in soil. Significant differences in Cd concentrations in clover due to fertilizer type were found at 5 sites. North Carolina phosphate rock treatments had significantly higher Cd concentrations in clover compared to

Salivary flow rate, buffer capacity, and urea concentration in adolescents with type 1 diabetes mellitus.

Science.gov (United States)

Saes Busato, Ivana Maria; Antoni, Carlos Cesar De; Calcagnotto, Thiago; Ignácio, Sérgio Aparecido; Azevedo-Alanis, Luciana Reis

2016-12-01

The objective of the study was to analyze salivary flow rate, urea concentration, and buffer capacity in adolescents with type 1 diabetes mellitus (type 1 DM) in two different stages. This study was performed on adolescents (14-19 years), allocated between two groups: type 1 DM group comprised 32 adolescents with type 1 DM, and non-type 1 DM group comprised 32 nondiabetics. The adolescents in type 1 DM group were evaluated at a baseline (T0) and after 15 months (T1), and those in non-type 1 DM group were only evaluated at T0. Diabetic status was determined by glycosylated hemoglobin (GHb) and capillary glucose tests. Measurement of salivary flow was performed by means of stimulated saliva (SSFR) collection. The buffer capacity (BC) was determined, and analysis of urea salivary concentration was performed using the colorimetric method. At T0, there were significant differences between diabetics and nondiabetics for SSFR and BC (pdiabetics, SSFR was 0.790 mL/min in T0 and 0.881 mL/min in T1 (p>0.05). BC at T0 was 4.8, and at T1, it was 3.9 (p=0.000). Urea concentration mean value had a significant decrease at T1 (28.13) compared with T0 (34.88) (p=0.013). There was a negative correlation between SSFR and urea salivary concentration at both T0 (r=-0.426, p≤0.05) and T1 (r=-0.601, p≤0.01). In adolescents with type 1 DM, hyposalivation at T0 was associated with an increase in urea salivary concentration. At T1, hyposalivation was associated with a reduction in BC, and an increase in salivary urea.

Novel method of separating macroporous arrays from p-type silicon substrate

International Nuclear Information System (INIS)

Peng Bobo; Wang Fei; Liu Tao; Yang Zhenya; Wang Lianwei; Fu, Ricky K. Y.; Chu, Paul K.

2012-01-01

This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed. (semiconductor materials)

Temperature-dependent thermal and thermoelectric properties of n -type and p -type S c1 -xM gxN

Science.gov (United States)

Saha, Bivas; Perez-Taborda, Jaime Andres; Bahk, Je-Hyeong; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Sands, Timothy D.

2018-02-01

Scandium Nitride (ScN) is an emerging rocksalt semiconductor with octahedral coordination and an indirect bandgap. ScN has attracted significant attention in recent years for its potential thermoelectric applications, as a component material in epitaxial metal/semiconductor superlattices, and as a substrate for defect-free GaN growth. Sputter-deposited ScN thin films are highly degenerate n -type semiconductors and exhibit a large thermoelectric power factor of ˜3.5 ×10-3W /m -K2 at 600-800 K. Since practical thermoelectric devices require both n- and p-type materials with high thermoelectric figures-of-merit, development and demonstration of highly efficient p-type ScN is extremely important. Recently, the authors have demonstrated p-type S c1 -xM gxN thin film alloys with low M gxNy mole-fractions within the ScN matrix. In this article, we demonstrate temperature dependent thermal and thermoelectric transport properties, including large thermoelectric power factors in both n- and p-type S c1 -xM gxN thin film alloys at high temperatures (up to 850 K). Employing a combination of temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity measurements, as well as detailed Boltzmann transport-based modeling analyses of the transport properties, we demonstrate that p-type S c1 -xM gxN thin film alloys exhibit a maximum thermoelectric power factor of ˜0.8 ×10-3W /m -K2 at 850 K. The thermoelectric properties are tunable by adjusting the M gxNy mole-fraction inside the ScN matrix, thereby shifting the Fermi energy in the alloy films from inside the conduction band in case of undoped n -type ScN to inside the valence band in highly hole-doped p -type S c1 -xM gxN thin film alloys. The thermal conductivities of both the n- and p-type films were found to be undesirably large for thermoelectric applications. Thus, future work should address strategies to reduce the thermal conductivity of S c1 -xM gxN thin-film alloys, without affecting

Acceleration of black hole universe

Science.gov (United States)

Zhang, T. X.; Frederick, C.

2014-01-01

Recently, Zhang slightly modified the standard big bang theory and developed a new cosmological model called black hole universe, which is consistent with Mach's principle, governed by Einstein's general theory of relativity, and able to explain all observations of the universe. Previous studies accounted for the origin, structure, evolution, expansion, and cosmic microwave background radiation of the black hole universe, which grew from a star-like black hole with several solar masses through a supermassive black hole with billions of solar masses to the present state with hundred billion-trillions of solar masses by accreting ambient matter and merging with other black holes. This paper investigates acceleration of the black hole universe and provides an alternative explanation for the redshift and luminosity distance measurements of type Ia supernovae. The results indicate that the black hole universe accelerates its expansion when it accretes the ambient matter in an increasing rate. In other words, i.e., when the second-order derivative of the mass of the black hole universe with respect to the time is positive . For a constant deceleration parameter , we can perfectly explain the type Ia supernova measurements with the reduced chi-square to be very close to unity, χ red˜1.0012. The expansion and acceleration of black hole universe are driven by external energy.

High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

KAUST Repository

Nazir, Safdar

2012-05-18

A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.

High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

KAUST Repository

Nazir, Safdar; Schwingenschlö gl, Udo; Upadhyay Kahaly, M.

2012-01-01

A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.

Structural and optical characterization of p-type highly Fe-doped SnO2 thin films and tunneling transport on SnO2:Fe/p-Si heterojunction

Science.gov (United States)

Ben Haj Othmen, Walid; Ben Hamed, Zied; Sieber, Brigitte; Addad, Ahmed; Elhouichet, Habib; Boukherroub, Rabah

2018-03-01

Nanocrystalline highly Fe-doped SnO2 thin films were prepared using a new simple sol-gel method with iron amounts of 5, 10, 15 and 20%. The obtained gel offers a long durability and high quality allowing to reach a sub-5 nm nanocrystalline size with a good crystallinity. The films were structurally characterized through X-ray diffraction (XRD) that confirms the formation of rutile SnO2. High Resolution Transmission Electron Microscopy (HRTEM) images reveals the good crystallinity of the nanoparticles. Raman spectroscopy shows that the SnO2 rutile structure is maintained even for high iron concentration. The variation of the PL intensity with Fe concentration reveals that iron influences the distribution of oxygen vacancies in tin oxide. The optical transmittance results indicate a redshift of the SnO2 band gap when iron concentration increases. The above optical results lead us to assume the presence of a compensation phenomenon between oxygen vacancies and introduced holes following Fe doping. From current-voltage measurements, an inversion of the conduction type from n to p is strongly predicted to follow the iron addition. Electrical characterizations of SnO2:Fe/p-Si and SnO2:Fe/n-Si heterojunctions seem to be in accordance with this deduction. The quantum tunneling mechanism is expected to be important at high Fe doping level, which was confirmed by current-voltage measurements at different temperatures. Both optical and electrical properties of the elaborated films present a particularity for the same iron concentration and adopt similar tendencies with Fe amount, which strongly correlate the experimental observations. In order to evaluate the applicability of the elaborated films, we proceed to the fabrication of the SnO2:Fe/SnO2 homojunction for which we note a good rectifying behavior.

The effect of particle-hole interaction on the XPS core-hole spectrum

International Nuclear Information System (INIS)

Ohno, Masahide; Sjoegren, Lennart

2004-01-01

How the effective particle-hole interaction energy, U, or the polarization effect on a secondary electron in a final two-hole one-particle (2h1p) state created by the Coster-Kronig (CK) transition can solely affect the density of the CK particle states and consequently the core-hole spectral function, is discussed. The X-ray photoelectron spectroscopy (XPS) core-hole spectrum is predominantly governed by the unperturbed initial core-hole energy relative to the zero-point energy. At the latter energy, the real part of the initial core-hole self-energy becomes zero (no relaxation energy shift) and the imaginary part (the lifetime broadening) approximately maximizes. The zero-point energy relative to the double-ionization threshold energy is governed by the ratio of U relative to the bandwidth of the CK continuum. As an example, we study the 5p XPS spectra of atomic Ra (Z=88), Th (Z=90) and U (Z=92). The spectra are interpreted in terms of the change in the unperturbed initial core-hole energy relative to the zero-point energy. We explain why in general an ab initio atomic many-body calculation can provide an overall good description of solid-state spectra predominantly governed by the atomic-like localized core-hole dynamics. We explain this in terms of the change from free atom to metal in both U and the zero-point energy (self-energy)

Thermodynamics of novel charged dilatonic BTZ black holes

Science.gov (United States)

Dehghani, M.

2017-10-01

In this paper, the three-dimensional Einstein-Maxwell theory in the presence of a dilatonic scalar field has been studied. It has been shown that the dilatonic potential must be considered as the linear combination of two Liouville-type potentials. Two new classes of charged dilatonic BTZ black holes, as the exact solutions to the coupled scalar, vector and tensor field equations, have been obtained and their properties have been studied. The conserved charge and mass of the new black holes have been calculated, making use of the Gauss's law and Abbott-Deser proposal, respectively. Through comparison of the thermodynamical extensive quantities (i.e. temperature and entropy) obtained from both, the geometrical and the thermodynamical methods, the validity of the first law of black hole thermodynamics has been confirmed for both of the new black holes we just obtained. A black hole thermal stability or phase transition analysis has been performed, making use of the canonical ensemble method. Regarding the black hole heat capacity, it has been found that for either of the new black hole solutions there are some specific ranges in such a way that the black holes with the horizon radius in these ranges are locally stable. The points of type one and type two phase transitions have been determined. The black holes, with the horizon radius equal to the transition points are unstable. They undergo type one or type two phase transitions to be stabilized.

Serum bilirubin concentration is associated with eGFR and urinary albumin excretion in patients with type 1 diabetes mellitus.

Science.gov (United States)

Nishimura, Takeshi; Tanaka, Masami; Sekioka, Risa; Itoh, Hiroshi

2015-01-01

Although relationships of serum bilirubin concentration with estimated glomerular filtration rate (eGFR) and urinary albumin excretion (UAE) in patients with type 2 diabetes have been reported, whether such relationships exist in patients with type 1 diabetes is unknown. A total of 123 patients with type 1 diabetes were investigated in this cross-sectional study. The relationship between bilirubin (total and indirect) concentrations and log(UAE) as well as eGFR was examined by Pearson's correlation analyses. Multivariate regression analyses were used to assess the association of bilirubin (total and indirect) with eGFR as well as log(UAE). A positive correlation was found between serum bilirubin concentration and eGFR; total bilirubin (r=0.223, p=0.013), indirect bilirubin (r=0.244, p=0.007). A negative correlation was found between serum bilirubin concentration and log(UAE); total bilirubin (r=-0.258, p=0.005), indirect bilirubin (r=-0.271, p=0.003). Multivariate regression analyses showed that indirect bilirubin concentration was an independent determinant of eGFR and log(UAE). Bilirubin concentration is associated with both eGFR and log(UAE) in patients with type 1 diabetes. Bilirubin might have a protective role in the progression of type 1 diabetic nephropathy. Copyright © 2015 Elsevier Inc. All rights reserved.

Surgical management of macular holes: results using gas tamponade alone, or in combination with autologous platelet concentrate, or transforming growth factor beta 2.

LENUS (Irish Health Repository)

Minihan, M

2012-02-03

BACKGROUND: Vitrectomy and gas tamponade has become a recognised technique for the treatment of macular holes. In an attempt to improve the anatomic and visual success of the procedure, various adjunctive therapies--cytokines, serum, and platelets--have been employed. A consecutive series of 85 eyes which underwent macular hole surgery using gas tamponade alone, or gas tamponade with either the cytokine transforming growth factor beta 2 (TGF-beta 2) or autologous platelet concentrate is reported. METHODS: Twenty eyes had vitrectomy and 20% SF6 gas tamponade; 15 had vitrectomy, 20% SF6 gas, and TGF-beta 2; 50 had vitrectomy, 16% C3F8 gas tamponade, and 0.1 ml of autologous platelet concentrate prepared during the procedure. RESULTS: Anatomic success occurred in 86% of eyes, with 96% of the platelet treated group achieving closure of the macular hole. Visual acuity improved by two lines or more in 65% of the SF6 only group, 33% of those treated with TGF-beta 2 and in 74% of the platelet treated group. In the platelet treated group 40% achieved 6\\/12 or better and 62% achieved 6\\/18 or better. The best visual results were obtained in stage 2 holes. CONCLUSION: Vitrectomy for macular holes is often of benefit and patients may recover good visual acuity, especially early in the disease process. The procedure has a number of serious complications, and the postoperative posturing requirement is difficult. Patients need to be informed of such concerns before surgery.

Record mobility in transparent p-type tin monoxide films and devices by phase engineering

KAUST Repository

Caraveo-Frescas, Jesus Alfonso

2013-06-25

Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.

Charge-Transfer-Induced p-Type Channel in MoS2 Flake Field Effect Transistors.

Science.gov (United States)

Min, Sung-Wook; Yoon, Minho; Yang, Sung Jin; Ko, Kyeong Rok; Im, Seongil

2018-01-31

The two-dimensional transition-metal dichalcogenide semiconductor MoS 2 has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS 2 , however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS 2 from n- to p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS 2 flake so that electron charges might be transferred from MoS 2 to IGZO during air ambient annealing. As a result, electron charges were depleted in MoS 2 . Such charge depletion lowered the MoS 2 Fermi level, which makes hole conduction favorable in MoS 2 when optimum source/drain electrodes with a high work function are selected. Our IGZO-supported MoS 2 flake field effect transistors (FETs) clearly display channel-type conversion from n- to p-channel in this way. Under short- and long-annealing conditions, n- and p-channel MoS 2 FETs are achieved, respectively, and a low-voltage complementary inverter is demonstrated using both channels in a single MoS 2 flake.

The Rates of Type I X-ray Bursts from Transients Observed with RXTE: Evidence for Black Hole Event Horizons

Science.gov (United States)

Remillard, R. A.; Lin, D.; Cooper, R. L.; Narayan, R.

2005-12-01

We measure the rates of type I X-ray bursts from a likely complete sample of 37 non-pulsing Galactic X-ray transients observed with the RXTE ASM during 1996-2004. Our strategy is to test the prevailing paradigms for these sources, which are well-categorized in the literature as either neutron-star systems or black hole candidates. Burst rates are measured as a function of the bolometric luminosity, and the results are compared with burst models for neutron stars and for heavy compact objects with a solid surface. We use augmented versions of the models developed by Narayan & Heyl (2002; 2003). For a given mass, we consider a range of conditions in both the radius and the temperature at the boundary below the accretion layer. We find 135 type I bursts in 3.7 Ms of PCA light curves for the neutron-star group, and the burst rate function is generally consistent with the model predictions for bursts from accreting neutron stars. On the other hand, none of the (20) bursts candidates passed spectral criteria for type I bursts in 6.5 Ms of PCA light curves for black-hole binaries and candidates. The burst function upper limits are inconsistent with the predictions of the burst model for heavy compact objects with a solid surface. The consistency probability is found to be below 10-7 for dynamical black-hole binaries, falling to below 10-13 for the additional exposures of black-hole candidates. These results provide indirect evidence that black holes do have event horizons. This research was supported, in part, by NASA science programs.

Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires.

Science.gov (United States)

Tedeschi, D; De Luca, M; Granados Del Águila, A; Gao, Q; Ambrosio, G; Capizzi, M; Tan, H H; Christianen, P C M; Jagadish, C; Polimeni, A

2016-10-12

The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III-V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field (B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is m e ∥ = (0.078 ± 0.002) m 0 (m 0 is the electron mass in vacuum) and perpendicular to ĉ is m e ⊥ = (0.093 ± 0.001) m 0 , resulting in a 20% mass anisotropy. Holes exhibit a much larger (∼320%) and opposite mass anisotropy with their effective mass along and perpendicular to ĉ equal to m h ∥ = (0.81 ± 0.18) m 0 and m h ⊥ = (0.250 ± 0.016) m 0 , respectively. While no full consensus is found with current theoretical results on WZ InP, our findings show trends remarkably similar to the experimental data available in WZ bulk materials, such as InN, GaN, and ZnO.

Efficient Naphthalenediimide-Based Hole Semiconducting Polymer with Vinylene Linkers between Donor and Acceptor Units

KAUST Repository

Zhang, Lei

2016-11-04

We demonstrate a new method to reverse the polarity and charge transport behavior of naphthalenediimide (NDI)-based copolymers by inserting a vinylene linker between the donor and acceptor units. The vinylene linkers minimize the intrinsic steric congestion between the NDI and thiophene moieties to prompt backbone planarity. The polymers with vinylene linkers exhibit electron n-channel transport characteristics under vacuum, similar to the benchmark polymer, P(NDI2OD-T2). To our surprise, when the polymers are measured in air, the dominant carrier type switches from n- to p-type and yield hole mobilities up to 0.45 cm(2) s(-1) with hole to electron mobility ratio of three (mu(h)/mu(e), similar to 3), which indicates that the hole density in the active layer can be significantly increased by exposure to air. This increase is consistent with the intrinsic more delocalized nature of the highest occupied molecular orbital of the charged vinylene polymer, as estimated by density functional theory (DFT) calculations, which facilitates hole transport within the polymer chains. This is the first demonstration of an efficient NDI-based hole semiconducting polymer, which will enable new developments in all-polymer solar cells, complementary circuits, and dopable polymers for use in thermoelectrics.

Efficient Naphthalenediimide-Based Hole Semiconducting Polymer with Vinylene Linkers between Donor and Acceptor Units

KAUST Repository

Zhang, Lei; Rose, Bradley Daniel; Liu, Yao; Nahid, Masrur M.; Gann, Eliot; Ly, Jack; Zhao, Wei; Rosa, Stephen J.; Russell, Thomas P.; Facchetti, Antonio; McNei, Christopher R.; Bredas, Jean-Luc; Briseno, Alejandro L.

2016-01-01

We demonstrate a new method to reverse the polarity and charge transport behavior of naphthalenediimide (NDI)-based copolymers by inserting a vinylene linker between the donor and acceptor units. The vinylene linkers minimize the intrinsic steric congestion between the NDI and thiophene moieties to prompt backbone planarity. The polymers with vinylene linkers exhibit electron n-channel transport characteristics under vacuum, similar to the benchmark polymer, P(NDI2OD-T2). To our surprise, when the polymers are measured in air, the dominant carrier type switches from n- to p-type and yield hole mobilities up to 0.45 cm(2) s(-1) with hole to electron mobility ratio of three (mu(h)/mu(e), similar to 3), which indicates that the hole density in the active layer can be significantly increased by exposure to air. This increase is consistent with the intrinsic more delocalized nature of the highest occupied molecular orbital of the charged vinylene polymer, as estimated by density functional theory (DFT) calculations, which facilitates hole transport within the polymer chains. This is the first demonstration of an efficient NDI-based hole semiconducting polymer, which will enable new developments in all-polymer solar cells, complementary circuits, and dopable polymers for use in thermoelectrics.

Effect of the final-state interaction on the initial core-hole lifetime: the case of the 4s-hole lifetime of Sn metal

International Nuclear Information System (INIS)

Ohno, Masahide

2003-01-01

The first theoretical study of the effect of the final-state interaction on the initial core-hole lifetime is presented. The 4s-hole lifetime width of Sn metal is calculated by an ab-initio atomic many-body theory (Green's function method). When the final-state interaction in the 4p4d two-hole state, created by the 4s -1 -4p -1 4d -1 εf super Coster-Kronig (CK) transition of the initial 4s hole, is explicitly taken into account, the ab-initio atomic many-body calculation of the 4s-hole X-ray photoelectron spectroscopy (XPS) spectrum of Sn atom can provide excellent agreement with experiment in both the 4s-hole energy and the 4s-hole lifetime width. Otherwise, the many-body calculation underestimates considerably the 4s-hole lifetime width. The 4p4d two-hole state interacts strongly with the 4d triple-hole state by the 4p -1 4d -1 -4d -3 εf super CK transition. The interaction affects greatly the initial 4s-hole lifetime width

Experimental study of the organic light emitting diode with a p-type silicon anode

International Nuclear Information System (INIS)

Ma, G.L.; Xu, A.G.; Ran, G.Z.; Qiao, Y.P.; Zhang, B.R.; Chen, W.X.; Dai, L.; Qin, G.G.

2006-01-01

We have fabricated and studied an organic light emitting diode (OLED) with a p-type silicon anode and a SiO 2 buffer layer between the anode and the organic layers which emits light from a semitransparent top Yb/Au cathode. The luminance of the OLED is up to 5600 cd/m 2 at 17 V and 1800 mA/cm 2 , the current efficiency is 0.31 cd/A. Both its luminance and current efficiency are much higher than those of the OLEDs with silicon as the anodes reported previously. The enhancement of the luminance and efficiency can be attributed to an improved balance between the hole- and electron-injection through two efficient ways: 1) restraining the hole-injection by inserting an ultra-thin SiO 2 buffer layer between the Si anode and the organic layers; and 2) enhancing the electron-injection by using a low work function, low optical reflectance and absorption semitransparent Yb/Au cathode

On the hole accelerator for III-nitride light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Zhang, Yonghui; Bi, Wengang; Geng, Chong; Xu, Shu; Demir, Hilmi Volkan; Sun, Xiao Wei

2016-01-01

In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-Al x Ga 1−x N heterojunction) with different designs, including the AlN composition in the p-Al x Ga 1−x N layer, and the thickness for the p-GaN layer and the p-Al x Ga 1−x N layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-Al x Ga 1−x N layer increases. Meanwhile, with p-GaN layer or p-Al x Ga 1−x N layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-Al x Ga 1−x N design, and the hole accelerator can effectively increase the hole injection if properly designed.

Efficient charge injection in p-type polymer field-effect transistors with low-cost molybdenum electrodes through V2O5 interlayer.

Science.gov (United States)

Baeg, Kang-Jun; Bae, Gwang-Tae; Noh, Yong-Young

2013-06-26

Here we report high-performance polymer OFETs with a low-cost Mo source/drain electrode by efficient charge injection through the formation of a thermally deposited V2O5 thin film interlayer. A thermally deposited V2O5 interlayer is formed between a regioregular poly(3-hexylthiophene) (rr-P3HT) or a p-type polymer semiconductor containing dodecyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and the Mo source/drain electrode. The P3HT or PC12TV12T OFETs with the bare Mo electrode exhibited lower charge carrier mobility than those with Au owing to a large barrier height for hole injection (0.5-1.0 eV). By forming the V2O5 layer, the P3HT or PC12TV12T OFETs with V2O5 on the Mo electrode exhibited charge carrier mobility comparable to that of a pristine Au electrode. Best P3HT or PC12TV12T OFETs with 5 nm thick V2O5 on Mo electrode show the charge carrier mobility of 0.12 and 0.38 cm(2)/(V s), respectively. Ultraviolet photoelectron spectroscopy results exhibited the work-function of the Mo electrode progressively changed from 4.3 to 4.9 eV with an increase in V2O5 thickness from 0 to 5 nm, respectively. Interestingly, the V2O5-deposited Mo exhibits comparable Rc to Au, which mainly results from the decreased barrier height for hole carrier injection from the low-cost metal electrode to the frontier molecular orbital of the p-type polymer semiconductor after the incorporation of the transition metal oxide hole injection layer, such as V2O5. This enables the development of large-area, low-cost electronics with the Mo electrodes and V2O5 interlayer.

The role of the VZn-NO-H complex in the p-type conductivity in ZnO.

Science.gov (United States)

Amini, M N; Saniz, R; Lamoen, D; Partoens, B

2015-02-21

Past research efforts aiming at obtaining stable p-type ZnO have been based on complexes involving nitrogen doping. A recent experiment by (J. G. Reynolds et al., Appl. Phys. Lett., 2013, 102, 152114) demonstrated a significant (∼10(18) cm(-3)) p-type behavior in N-doped ZnO films after appropriate annealing. The p-type conductivity was attributed to a VZn-NO-H shallow acceptor complex, formed by a Zn vacancy (VZn), N substituting O (NO), and H interstitial (Hi). We present here a first-principles hybrid functional study of this complex compared to the one without hydrogen. Our results confirm that the VZn-NO-H complex acts as an acceptor in ZnO. We find that H plays an important role, because it lowers the formation energy of the complex with respect to VZn-NO, a complex known to exhibit (unstable) p-type behavior. However, this additional H atom also occupies the hole level at the origin of the shallow behavior of VZn-NO, leaving only two states empty higher in the band gap and making the VZn-NO-H complex a deep acceptor. Therefore, we conclude that the cause of the observed p-type conductivity in experiment is not the presence of the VZn-NO-H complex, but probably the formation of the VZn-NO complex during the annealing process.

Reinforcement of a plate weakened by multiple holes with several patches for different types of plate-patch attachment

KAUST Repository

Zemlyanova, A.

2014-01-24

The most general situation of the reinforcement of a plate with multiple holes by several patches is considered. There is no restriction on the number and the location of the patches. Two types of patch attachment are considered: only along the boundary of the patch or both along the boundary of the patch and the boundaries of the holes which this patch covers. The unattached boundaries of the holes may be loaded with given in-plane stresses. The mechanical problem is reduced to a system of singular integral equations which can be further reduced to a system of Fredholm equations. A new numerical procedure for the solution of the system of singular integral equations is proposed in this paper. It is demonstrated on numerical examples that this procedure has advantages in the case of multiple patches and holes and allows achievement of better numerical convergence with less computational effort.

Inkjet-printed p-type nickel oxide thin-film transistor

Science.gov (United States)

Hu, Hailong; Zhu, Jingguang; Chen, Maosheng; Guo, Tailiang; Li, Fushan

2018-05-01

High-performance inkjet-printed nickel oxide thin-film transistors (TFTs) with Al2O3 high-k dielectric have been fabricated using a sol-gel precursor ink. The "coffee ring" effect during the printing process was facilely restrained by modifying the viscosity of the ink to control the outward capillary flow. The impacts on the device performance was studied in detail in consideration of annealing temperature of the nickel oxide film and the properties of dielectric layer. The optimized switching ability of the device were achieved at an annealing temperature of 280 °C on a 50-nm-thick Al2O3 dielectric layer, with a hole mobility of 0.78 cm2/V·s, threshold voltage of -0.6 V and on/off current ratio of 5.3 × 104. The as-printed p-type oxide TFTs show potential application in low-cost, large-area complementary electronic devices.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

Science.gov (United States)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

The Successful Operation of Hole-type Gaseous Detectors at Cryogenic Temperatures

CERN Document Server

Pereiale, L.; Iacobaeus, C.; Francke, T.; Lund-Jensen, B.; Pavlopoulos, P.; Picchi, P.; Pietropaolo, F.; Tokanai, F.

2004-01-01

We have demonstrated that hole-type gaseous detectors, GEMs and capillary plates, can operate up to 77 K. For example, a single capillary plate can operate at gains of above 10E3 in the entire temperature interval between 300 until 77 K. The same capillary plate combined with CsI photocathodes could operate perfectly well at gains (depending on gas mixtures) of 100-1000. Obtained results may open new fields of applications for capillary plates as detectors of UV light and charge particles at cryogenic temperatures: noble liquid TPCs, WIMP detectors or LXe scintillating calorimeters and cryogenic PETs.

Secondary ion mass spectrometry analysis of In-doped p-type GaN films

International Nuclear Information System (INIS)

Chiou, C.Y.; Wang, C.C.; Ling, Y.C.; Chiang, C.I.

2003-01-01

SIMS was used to investigate the isoelectronic In-doped p-type GaN films. The growth rate of the p-type GaN film decreased with increasing Mg and In doping. The Mg saturation in GaN was 3.55x10 19 atoms/cm 3 . The role of In as surfactant was evaluated by varying In concentrations and it was observed that the surface appeared smooth with increasing In incorporation. The Mg solubility in p-type GaN improved to 0.0025% molar ratio of the GaN with In incorporation. The In concentration results observed in neutron activation analysis (NAA) were found to be higher by a factor of 2.88 than that observed in SIMS and can be attributed to the difference in sensitivity of the two techniques. Good linearity in the results was observed from both techniques

Statistical black-hole thermodynamics

International Nuclear Information System (INIS)

Bekenstein, J.D.

1975-01-01

Traditional methods from statistical thermodynamics, with appropriate modifications, are used to study several problems in black-hole thermodynamics. Jaynes's maximum-uncertainty method for computing probabilities is used to show that the earlier-formulated generalized second law is respected in statistically averaged form in the process of spontaneous radiation by a Kerr black hole discovered by Hawking, and also in the case of a Schwarzschild hole immersed in a bath of black-body radiation, however cold. The generalized second law is used to motivate a maximum-entropy principle for determining the equilibrium probability distribution for a system containing a black hole. As an application we derive the distribution for the radiation in equilibrium with a Kerr hole (it is found to agree with what would be expected from Hawking's results) and the form of the associated distribution among Kerr black-hole solution states of definite mass. The same results are shown to follow from a statistical interpretation of the concept of black-hole entropy as the natural logarithm of the number of possible interior configurations that are compatible with the given exterior black-hole state. We also formulate a Jaynes-type maximum-uncertainty principle for black holes, and apply it to obtain the probability distribution among Kerr solution states for an isolated radiating Kerr hole

The Thermodynamic Relationship between the RN-AdS Black Holes and the RN Black Hole in Canonical Ensemble

Directory of Open Access Journals (Sweden)

Yu-Bo Ma

2017-01-01

Full Text Available In this paper, by analyzing the thermodynamic properties of charged AdS black hole and asymptotically flat space-time charged black hole in the vicinity of the critical point, we establish the correspondence between the thermodynamic parameters of asymptotically flat space-time and nonasymptotically flat space-time, based on the equality of black hole horizon area in the two different types of space-time. The relationship between the cavity radius (which is introduced in the study of asymptotically flat space-time charged black holes and the cosmological constant (which is introduced in the study of nonasymptotically flat space-time is determined. The establishment of the correspondence between the thermodynamics parameters in two different types of space-time is beneficial to the mutual promotion of different time-space black hole research, which is helpful to understand the thermodynamics and quantum properties of black hole in space-time.

Quantum tunneling, adiabatic invariance and black hole spectroscopy

Science.gov (United States)

Li, Guo-Ping; Pu, Jin; Jiang, Qing-Quan; Zu, Xiao-Tao

2017-05-01

In the tunneling framework, one of us, Jiang, together with Han has studied the black hole spectroscopy via adiabatic invariance, where the adiabatic invariant quantity has been intriguingly obtained by investigating the oscillating velocity of the black hole horizon. In this paper, we attempt to improve Jiang-Han's proposal in two ways. Firstly, we once again examine the fact that, in different types (Schwarzschild and Painlevé) of coordinates as well as in different gravity frames, the adiabatic invariant I_adia = \\oint p_i dq_i introduced by Jiang and Han is canonically invariant. Secondly, we attempt to confirm Jiang-Han's proposal reasonably in more general gravity frames (including Einstein's gravity, EGB gravity and HL gravity). Concurrently, for improving this proposal, we interestingly find in more general gravity theories that the entropy of the black hole is an adiabatic invariant action variable, but the horizon area is only an adiabatic invariant. In this sense, we emphasize the concept that the quantum of the black hole entropy is more natural than that of the horizon area.

Control of electrical conduction in DNA using hole doping

Science.gov (United States)

Lee, Hea-Yeon; Taniguchi, Masateru; Yoo, K. H.; Otsuka, Youichi; Tanaka, Hidekazu; Kawai, Tomoji

2002-03-01

Control of electrical conduction in DNA using hole doping H.Y.Lee1, M.Taniguchi1, K.H.Yoo2, Y.Otsuka1 H.Tanaka1 and T.Kawai1 1The Institute of Scientific and Industrial Research(ISIR), Osaka University, Osaka, Japan. 2Department of Physics, Younsei University, Seoul, Korea Possible applications of DNA molecules in electronic devices and biosensors were suggested almost ten years ago A DNA structure containing a single type of base pair appears to be a good candidate for conduction along the \\x81E-electron clouds of the stacked bases. There have been lots of investigations on conduction mechanisms of the DNA molecules. However, it is not still clear whether the observed conductions of some DNA molecules come from motions of either ionic charges or other carriers. Although the basic mechanism for DNA-mediated charge transport should be understood for electronic applications, there have been divergent reports on its nature. And I will be present the research for the charge carrier conduction of DNA film under oxygen and iodine gas by using 10¡V100 nm gap. The doping studies using oxygen and iodine gas can provide a definite answer for the carrier conduction mechanism and also a possible method to control the carrier concentration in DNA molecules. Using oxygen and iodine adsorption experiments on the poly (dG)-poly (dC) DNA molecules, we will show that their conductance becomes increased easily by several orders of magnitudes due to the hole doping, which is a characteristic behavior of a p-type semiconductor. On the other hand, we will also show that the poly (dA) - poly (dT) DNA molecules behave as an n-type semiconductor. Our works indicate that the concentration and the type of carriers in the DNA molecules could be controlled using proper doping methods. We expect that this would be a major breakthrough in DNA-based nano-electronics, similar to the fact that the doped conductive has polyacetylene opened up a new field of electronics with exciting implications

Visual outcomes of macular hole surgery

International Nuclear Information System (INIS)

Khaqan, H.A.; Muhammad, F.J.

2016-01-01

To determine the mean visual improvement after internal limiting membrane (ILM) peeling assisted with brilliant blue staining of ILM in macular hole, and stratify the mean visual improvement in different stages of macular hole. Study Design: Quasi-experimental study. Place and Duration of Study: Eye outpatient department (OPD), Lahore General Hospital, Lahore from October 2013 to December 2014. Methodology: Patients with macular hole underwent measurement of best corrected visual acuity (BCVA) and fundus examination with indirect slit lamp biomicroscopy before surgery. The diagnosis of all patients was confirmed on optical coherence tomography. All patients had 23G trans-conjunctival three ports pars plana vitrectomy, ILM peeling, and endotamponade of SF6. The mean visual improvement of different stages of macular hole was noted. Paired t-test was applied. Results: There were 30 patients, 15 males and 15 females (50%). The mean age was 62 ± 10.95 years. They presented with low mean preoperative visual acuity (VA) of 0.96 ± 0.11 logMar. The mean postoperative VA was 0.63 ± 0.24 logMar. The mean visual increase was 0.33 0.22 logMar (p < 0.001). In patients with stage 2 macular hole, mean visual increase was 0.35 ± 0.20 logMar (p < 0.001). In patients with stage 3 macular hole, mean visual increase was 0.44 ± 0.21 logMar (p < 0.001), and in patients with stage 4 macular hole it was 0.13 ± 0.1 logMar (p = 0.004). Conclusion: ILM peeling assisted with brilliant blue is a promising surgery for those patients who have decreased vision due to macular hole, in 2 - 4 stages of macular hole. (author)

Four-dimensional black holes with scalar hair in nonlinear electrodynamics

International Nuclear Information System (INIS)

Barrientos, Jose; Gonzalez, P.A.; Vasquez, Yerko

2016-01-01

We consider a gravitating system consisting of a scalar field minimally coupled to gravity with a self-interacting potential and a U(1) nonlinear electromagnetic field. Solving analytically and numerically the coupled system for both power-law and Born-Infeld type electrodynamics, we find charged hairy black hole solutions. Then we study the thermodynamics of these solutions and we find that at a low temperature the topological charged black hole with scalar hair is thermodynamically preferred, whereas the topological charged black hole without scalar hair is thermodynamically preferred at a high temperature for power-law electrodynamics. Interestingly enough, these phase transitions occur at a fixed critical temperature and do not depend on the exponent p of the nonlinear electrodynamics. (orig.)

Four-dimensional black holes with scalar hair in nonlinear electrodynamics

Energy Technology Data Exchange (ETDEWEB)

Barrientos, Jose [Universidad de Concepcion, Departamento de Fisica, Concepcion (Chile); Universidad Catolica del Norte, Departamento de Ensenanza de las Ciencias Basicas, Coquimbo (Chile); Gonzalez, P.A. [Universidad Diego Portales, Facultad de Ingenieria, Santiago (Chile); Vasquez, Yerko [Universidad de La Serena, Departamento de Fisica y Astronomia, Facultad de Ciencias, La Serena (Chile)

2016-12-15

We consider a gravitating system consisting of a scalar field minimally coupled to gravity with a self-interacting potential and a U(1) nonlinear electromagnetic field. Solving analytically and numerically the coupled system for both power-law and Born-Infeld type electrodynamics, we find charged hairy black hole solutions. Then we study the thermodynamics of these solutions and we find that at a low temperature the topological charged black hole with scalar hair is thermodynamically preferred, whereas the topological charged black hole without scalar hair is thermodynamically preferred at a high temperature for power-law electrodynamics. Interestingly enough, these phase transitions occur at a fixed critical temperature and do not depend on the exponent p of the nonlinear electrodynamics. (orig.)

Stability of black holes based on horizon thermodynamics

Directory of Open Access Journals (Sweden)

Meng-Sen Ma

2015-12-01

Full Text Available On the basis of horizon thermodynamics we study the thermodynamic stability of black holes constructed in general relativity and Gauss–Bonnet gravity. In the framework of horizon thermodynamics there are only five thermodynamic variables E, P, V, T, S. It is not necessary to consider concrete matter fields, which may contribute to the pressure of black hole thermodynamic system. In non-vacuum cases, we can derive the equation of state, P=P(V,T. According to the requirements of stable equilibrium in conventional thermodynamics, we start from these thermodynamic variables to calculate the heat capacity at constant pressure and Gibbs free energy and analyze the local and global thermodynamic stability of black holes. It is shown that P>0 is the necessary condition for black holes in general relativity to be thermodynamically stable, however this condition cannot be satisfied by many black holes in general relativity. For black hole in Gauss–Bonnet gravity negative pressure can be feasible, but only local stable black hole exists in this case.

Internal structure of black holes

International Nuclear Information System (INIS)

Cvetic, Mirjam

2013-01-01

Full text: We review recent progress that sheds light on the internal structure of general black holes. We first summarize properties of general multi-charged rotating black holes both in four and five dimensions. We show that the asymptotic boundary conditions of these general asymptotically flat black holes can be modified such that a conformal symmetry emerges. These subtracted geometries preserve the thermodynamic properties of the original black holes and are of the Lifshitz type, thus describing 'a black hole in the asymptotically conical box'. Recent efforts employ solution generating techniques to construct interpolating geometries between the original black hole and their subtracted geometries. Upon lift to one dimension higher, these geometries lift to AdS 3 times a sphere, and thus provide a microscopic interpretation of the black hole entropy in terms of dual two-dimensional conformal field theory. (author)

Pregnancy-induced rise in serum C-peptide concentrations in women with type 1 diabetes

DEFF Research Database (Denmark)

Nielsen, Lene Ringholm; Rehfeld, Jens F; Pedersen-Bjergaard, Ulrik

2009-01-01

OBJECTIVE: The purpose of this study was to investigate whether pregnancy induces increased insulin production as a marker of improved beta-cell function in women with long-term type 1 diabetes. RESEARCH DESIGN AND METHODS: This was a prospective study of 90 consecutive pregnant women with type 1.......85). Multivariate regression analysis revealed a positive association between the absolute increase in C-peptide concentrations during pregnancy and decreased A1C from 8 to 33 weeks (P = 0.003). CONCLUSIONS: A pregnancy-induced increase in C-peptide concentrations in women with long-term type 1 diabetes...... in 35 women. RESULTS: C-peptide concentrations gradually increased throughout pregnancy regardless of serum glucose concentrations in the 90 women with a median duration of diabetes of 17 years (range 1-36 years). Among 35 women with paired recordings of stimulated C-peptide, C-peptide production...

Electrons, holes, and excitons in GaAs polytype quantum dots

Energy Technology Data Exchange (ETDEWEB)

Climente, Juan I.; Segarra, Carlos; Rajadell, Fernando; Planelles, Josep, E-mail: josep.planelles@uji.es [Departament de Química Física i Analítica, Universitat Jaume I, E-12080 Castelló (Spain)

2016-03-28

Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes.

Black holes and cosmic censorship

International Nuclear Information System (INIS)

Hiscock, W.A.

1979-01-01

It is widely accepted that the complete gravitational collapse of a body always yields a black hole, and that naked singularities are never produced (the cosmic censorship hypothesis). The local (or strong) cosmic censorship hypothesis states that singularities which are even locally naked (e.g., to an observer inside a black hole) are never produced. This dissertation studies the validity of these two conjectures. The Kerr-Newman metrics describes the black holes only when M 2 greater than or equal to Q 2 + P 2 , where M is the mass of the black hole, a = J/M its specific angular momentum, Q its electric charge, and P its magnetic charge. In the first part of this dissertation, the possibility of converting an extreme Kerr-Newman black hole (M 2 = a 2 + Q 2 + P 2 ) into a naked singularity by the accretion of test particles is considered. The motion of test particles is studied with a large angular momentum to energy ratio, and also test particles with a large charge to energy ratio. The final state is always found to be a black hole if the angular momentum, electric charge, and magnetic charge of the black hole are all much greater than the corresponding angular momentum, electric charge, and magnetic charge of the test particle. In Part II of this dissertation possible black hole interior solutions are studied. The Cauchy horizons and locally naked timelike singularities of the charged (and/or rotating) solutions are contrasted with the spacelike all-encompassing singularity of the Schwarzschild solution. It is determined which portions of the analytic extension of the Reissner-Nordstroem solution are relevant to realistic gravitational collapse

A novel calibration algorithm for five-hole pressure probe

African Journals Online (AJOL)

user

Five-hole probes are used to measure the three components of velocity, inflow ... centre hole pressure labeled as 5. P and the off-axis holes labeled as 1. P , 2. P , 3 ..... of this study and is doing research in the flow control group of the institute.

Towards low-dimensional hole systems in Be-doped GaAs nanowires

DEFF Research Database (Denmark)

Ullah, A. R.; Gluschke, J. G.; Jeppesen, Peter Krogstrup

2017-01-01

-gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good......GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly confined 0D and 1D hole systems with strong spin–orbit effects, motivating...... our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top...

Performance, carcass and ruminal fermentation characteristics of heifers fed concentrates differing in energy level and cereal type (corn vs. wheat)

Energy Technology Data Exchange (ETDEWEB)

Carrasco, C.; Carro, M.D.; Fuentetaja, A.; Medel, P.

2017-07-01

A total of 144 beef heifers (218 ± 26.4 kg body weight) were housed in 24 pens (6 animals each) and used in a 168-day feedlot study to evaluate the influence of cereal type and energy level on performance, carcass quality and ruminal fermentation. Four concentrates were formulated according to a 2×2 factorial arrangement of treatments, with two energy levels (1,452 vs. 1,700 kcal net energy/kg) and two main cereals (wheat vs. corn). Concentrate and straw were offered ad libitum. Concentrate intake and body weight were recorded on days 42, 84, 126 and 168. Ruminal fluid was obtained by ruminocentesis from 3 heifers per pen on days 1, 84 and 168; and carcass weight, classification and yield, were determined in the same animals. Heifers fed high-energy diets had lower intake (6.97 vs. 7.29 kg fresh matter/d; p=0.011), and lower concentrate to gain ratio (5.15 vs. 5.66 kg/kg; p=0.002) than those fed low energy concentrates, and tended (p=0.069) to be heavier along the time. Neither carcass yield and classification, nor ruminal pH, volatile fatty acids nor NH3-N concentrations were affected (p>0.050) by energy level. Total volatile fatty acids concentration tended (p=0.070) to be greater in heifers fed corn-based than wheat-based concentrates. No energy level x cereal type interactions were observed. These results indicate that high energy concentrates decreased feed intake and feed conversion but had minor effects on carcass performance. Cereal type had no effects on performance and ruminal fermentation and no interactions between cereal type and energy were detected.

Performance, carcass and ruminal fermentation characteristics of heifers fed concentrates differing in energy level and cereal type (corn vs. wheat)

International Nuclear Information System (INIS)

Carrasco, C.; Carro, M.D.; Fuentetaja, A.; Medel, P.

2017-01-01

A total of 144 beef heifers (218 ± 26.4 kg body weight) were housed in 24 pens (6 animals each) and used in a 168-day feedlot study to evaluate the influence of cereal type and energy level on performance, carcass quality and ruminal fermentation. Four concentrates were formulated according to a 2×2 factorial arrangement of treatments, with two energy levels (1,452 vs. 1,700 kcal net energy/kg) and two main cereals (wheat vs. corn). Concentrate and straw were offered ad libitum. Concentrate intake and body weight were recorded on days 42, 84, 126 and 168. Ruminal fluid was obtained by ruminocentesis from 3 heifers per pen on days 1, 84 and 168; and carcass weight, classification and yield, were determined in the same animals. Heifers fed high-energy diets had lower intake (6.97 vs. 7.29 kg fresh matter/d; p=0.011), and lower concentrate to gain ratio (5.15 vs. 5.66 kg/kg; p=0.002) than those fed low energy concentrates, and tended (p=0.069) to be heavier along the time. Neither carcass yield and classification, nor ruminal pH, volatile fatty acids nor NH3-N concentrations were affected (p>0.050) by energy level. Total volatile fatty acids concentration tended (p=0.070) to be greater in heifers fed corn-based than wheat-based concentrates. No energy level x cereal type interactions were observed. These results indicate that high energy concentrates decreased feed intake and feed conversion but had minor effects on carcass performance. Cereal type had no effects on performance and ruminal fermentation and no interactions between cereal type and energy were detected.

Siegel modular forms and black hole entropy

Energy Technology Data Exchange (ETDEWEB)

Belin, Alexandre; Castro, Alejandra [Institute for Theoretical Physics, University of Amsterdam,Science Park 904, Postbus 94485, 1090 GL Amsterdam (Netherlands); Gomes, João [Institute for Theoretical Physics, University of Amsterdam,Science Park 904, Postbus 94485, 1090 GL Amsterdam (Netherlands); Institute for Theoretical Physics, University of Utrecht,Leuvenlaan 3584 CE Utrecht (Netherlands); Keller, Christoph A. [Department of Mathematics, ETH Zurich,CH-8092 Zurich (Switzerland)

2017-04-11

We discuss the application of Siegel Modular Forms to Black Hole entropy counting. The role of the Igusa cusp form χ{sub 10} in the D1D5P system is well-known, and its transformation properties are what allows precision microstate counting in this case. We apply a similar method to extract the Fourier coefficients of other Siegel modular and paramodular forms, and we show that they could serve as candidates for other types of black holes. We investigate the growth of their coefficients, identifying the dominant contributions and the leading logarithmic corrections in various regimes. We also discuss similarities and differences to the behavior of χ{sub 10}, and possible physical interpretations of such forms both from a microscopic and gravitational point of view.

Serum uric acid concentration in patients with type-2 diabetes mellitus during diet or glibenclamide therapy

International Nuclear Information System (INIS)

Mahmood, I.H.

2007-01-01

To investigate serum uric acid concentration in patients with type 2 diabetes mellitus. This is a case control study conducted in Al-Wafa Diabetic Center in Mosul over a period of one year starting from January 1, 2005 to January 1, 2006. Serum glucose concentration and uric acid concentration were measured in both control and patient's groups (group 1 patients on diet therapy, group 2 patients on glibenclamide therapy and group 3 involve naturopathic patients). Serum glucose concentration was high in the diabetic groups as compared with the control group (P 0.2) except in group-3 (P<0.05). A negative correlation was reported between hyperglycemia and uric acid concentration of the different groups. Serum uric acid concentration is slightly reduced in type 2 diabetic patients particularly in the complicated patients with peripheral neuropathy and this may be due to the oxidative stress that decreases the antioxidant capacity of the body involving uric acid. (author)

Gravitational waveforms from a point particle orbiting a Schwarzschild black hole

International Nuclear Information System (INIS)

Martel, Karl

2004-01-01

We numerically solve the inhomogeneous Zerilli-Moncrief and Regge-Wheeler equations in the time domain. We obtain the gravitational waveforms produced by a point particle of mass μ traveling around a Schwarzschild black hole of mass M on arbitrary bound and unbound orbits. Fluxes of energy and angular momentum at infinity and the event horizon are also calculated. Results for circular orbits, selected cases of eccentric orbits, and parabolic orbits are presented. The numerical results from the time-domain code indicate that, for all three types of orbital motion, black hole absorption contributes less than 1% of the total flux, so long as the orbital radius r p (t) satisfies r p (t)>5M at all times

CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

CERN Document Server

Hoedlmoser, H; Köhler, M; Nordlund, H

2007-01-01

Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

Micro-hole array fluorescent sensor based on AC-Dielectrophoresis (DEP) for simultaneous analysis of nano-molecules

Science.gov (United States)

Kim, Hye Jin; Kang, Dong-Hoon; Lee, Eunji; Hwang, Kyo Seon; Shin, Hyun-Joon; Kim, Jinsik

2018-02-01

We propose a simple fluorescent bio-chip based on two types of alternative current-dielectrophoretic (AC-DEP) force, attractive (positive DEP) and repulsive (negative DEP) force, for simultaneous nano-molecules analysis. Various radius of micro-holes on the bio-chip are designed to apply the different AC-DEP forces, and the nano-molecules are concentrated inside the micro-hole arrays according to the intensity of the DEP force. The bio-chip was fabricated by Micro Electro Mechanical system (MEMS) technique, and was composed of two layers; a SiO2 layer and Ta/Pt layer were accomplished for an insulation layer and a top electrode with micro-hole arrays to apply electric fields for DEP force, respectively. Each SiO2 and Ta/Pt layers were deposited by thermal oxidation and sputtering, and micro-hole arrays were fabricated with Inductively Coupled Plasma (ICP) etching process. For generation of each positive and negative DEP at micro-holes, we applied two types of sine-wave AC voltage with different frequency range alternately. The intensity of the DEP force was controlled by the radius of the micro-hole and size of nano-molecule, and calculated with COMSOL multi-physics. Three types of nano-molecules labelled with different fluorescent dye were used and the intensity of nano-molecules was examined by the fluorescent optical analysis after applying the DEP force. By analyzing the fluorescent intensities of the nano-molecules, we verify the various nano-molecules in analyte are located successfully inside corresponding micro-holes with different radius according to their size.

Hydrogen incorporation in high hole density GaN:Mg

Science.gov (United States)

Zvanut, M. E.; Uprety, Y.; Dashdorj, J.; Moseley, M.; Doolittle, W. Alan

2011-03-01

We investigate hydrogen passivation in heavily doped p-type GaN using electron paramagnetic resonance (EPR) spectroscopy. Samples include both conventionally grown GaN (1019 cm-3 Mg, 1017 cm-3 holes) and films grown by metal modulation epitaxy (MME), which yielded higher Mg (1- 4 x 1020 cm-3) and hole (1- 40 x 1018 cm-3) densities than found in conventionally grown GaN. The Mg acceptor signal is monitored throughout 30 minute annealing steps in N2 :H2 (92%:7%)) and subsequently pure N2 . N2 :H2 heat treatments of the lower hole density films begin to reduce the Mg EPR intensity at 750 o C, but quench the signal in high hole density films at 600 o C. Revival of the signal by subsequent N2 annealing occurs at 800 o C for the low hole density material and 600 o C in MME GaN. The present work highlights chemical differences between heavily Mg doped and lower doped films; however, it is unclear whether the difference is due to changes in hydrogen-Mg complex formation or hydrogen diffusion. The work at UAB is supported by the NSF.

Six-dimensional localized black holes: Numerical solutions

International Nuclear Information System (INIS)

Kudoh, Hideaki

2004-01-01

To test the strong-gravity regime in Randall-Sundrum braneworlds, we consider black holes bound to a brane. In a previous paper, we studied numerical solutions of localized black holes whose horizon radii are smaller than the AdS curvature radius. In this paper, we improve the numerical method and discuss properties of the six-dimensional (6D) localized black holes whose horizon radii are larger than the AdS curvature radius. At a horizon temperature T≅1/2πl, the thermodynamics of the localized black hole undergo a transition with its character changing from a 6D Schwarzschild black hole type to a 6D black string type. The specific heat of the localized black holes is negative, and the entropy is greater than or nearly equal to that of the 6D black strings with the same thermodynamic mass. The large localized black holes show flattened horizon geometries, and the intrinsic curvature of the horizon four-geometry becomes negative near the brane. Our results indicate that the recovery mechanism of lower-dimensional Einstein gravity on the brane works even in the presence of the black holes

Serum concentrations of soluble (s)L- and (s)P-selectins in women with ovarian cancer.

Science.gov (United States)

Majchrzak-Baczmańska, Dominika B; Głowacka, Ewa; Wilczyński, Miłosz; Malinowski, Andrzej

2018-03-01

The aim of the study was to compare serum concentration of soluble L- and P-selectins in women with ovarian cancer (OC) and healthy controls, and to investigate sL- and sP-selectin levels with regard to clinical and pathological parameters. Correlation analysis was used to measure the following: sL- and sP-selectin concentration and Ca125; sP-selectin and platelet concentrations; and sL-selectin and serum leukocyte levels in women with OC. The study included 29 patients with OC and 23 healthy controls. Serum concentrations of sL- and sP-selectins were measured in all subjects. Routine diagnostic tests: CBC and USG (both groups) and Ca125 (study group) were performed. Significantly higher serum concentrations of sL- and sP-selectins were found in the study group as compared to controls. Lower levels of serum sL-selectin were observed in women with poorly-differentiated OC (G3) and advanced stages of the disease (FIGO III, IV), but the results were statistically insignificant. No statistically significant relationship was detected between sP-selectin serum concentration in women with OC and tumour differentiation, histological type, and stage of the disease. No significant correlation was found between sL- and sP-selectins and Ca125 levels. A weak correlation was found between serum concentration of sP-selectin in women with OC and platelet count. No statistically significant correlation was observed between sL-selectin concentration and serum leukocyte levels in women with OC. The analysis of sL- and sP-selectin concentrations may be a useful tool in the diagnosis of OC. The levels of sL-selectin decrease with disease progression.

Turbulent black holes.

Science.gov (United States)

Yang, Huan; Zimmerman, Aaron; Lehner, Luis

2015-02-27

We demonstrate that rapidly spinning black holes can display a new type of nonlinear parametric instability-which is triggered above a certain perturbation amplitude threshold-akin to the onset of turbulence, with possibly observable consequences. This instability transfers from higher temporal and azimuthal spatial frequencies to lower frequencies-a phenomenon reminiscent of the inverse cascade displayed by (2+1)-dimensional fluids. Our finding provides evidence for the onset of transitory turbulence in astrophysical black holes and predicts observable signatures in black hole binaries with high spins. Furthermore, it gives a gravitational description of this behavior which, through the fluid-gravity duality, can potentially shed new light on the remarkable phenomena of turbulence in fluids.

The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots.

Science.gov (United States)

Kim, Sunghoon; Park, Jaehyun; Kim, Sungwoo; Jung, Won; Sung, Jaeyoung; Kim, Sang-Wook

2010-06-15

New type-II structures of CdSe/InP and InP/CdSe core-shell nanocrystals which have staggered bandgap alignment were fabricated. Using a simple model for the wave function for electrons and holes in InP/CdSe and CdSe/InP core/shell nanocrystals showed the wave function of the electron and hole spread into the shell, respectively. The probability density of the InP/CdSe and CdSe/InP core/shell QDs also showed a similar tendency. As a result, the structure exhibits increased delocalization of electrons and holes, leading to a red-shift in absorption and emission. Quantum yield increased in the InP/CdSe, however decreased in the CdSe/InP. The reason may be due to the surface trap and high activation barrier for de-trapping in the InP shell. 2010 Elsevier Inc. All rights reserved.

Sensing local pH and ion concentration at graphene electrode surfaces using in situ Raman spectroscopy.

Science.gov (United States)

Shi, Haotian; Poudel, Nirakar; Hou, Bingya; Shen, Lang; Chen, Jihan; Benderskii, Alexander V; Cronin, Stephen B

2018-02-01

We report a novel approach to probe the local ion concentration at graphene/water interfaces using in situ Raman spectroscopy. Here, the upshifts observed in the G band Raman mode under applied electrochemical potentials are used to determine the charge density in the graphene sheet. For voltages up to ±0.8 V vs. NHE, we observe substantial upshifts in the G band Raman mode by as much as 19 cm -1 , which corresponds to electron and hole carrier densities of 1.4 × 10 13 cm -2 and Fermi energy shifts of ±430 meV. The charge density in the graphene electrode is also measured independently using the capacitance-voltage characteristics (i.e., Q = CV), and is found to be consistent with those measured by Raman spectroscopy. From charge neutrality requirements, the ion concentration in solution per unit area must be equal and opposite to the charge density in the graphene electrode. Based on these charge densities, we estimate the local ion concentration as a function of electrochemical potential in both pure DI water and 1 M KCl solutions, which span a pH range from 3.8 to 10.4 for pure DI water and net ion concentrations of ±0.7 mol L -1 for KCl under these applied voltages.

Lattice location of diffused Zn atoms in GaAs and InP single crystals

International Nuclear Information System (INIS)

Chan, L.Y.; Yu, K.M.; Ben-Tzur, M.; Haller, E.E.; Jaklevic, J.M.; Walukiewicz, W.; Hanson, C.M.

1991-01-01

We have investigated the saturation phenomenon of the free carrier concentration in p-type GaAs and InP single crystals doped by zinc diffusion. The free hole saturation occurs at 10 20 cm -3 for GaAs, but the maximum concentration for InP appears at mid 10 18 cm -3 . The difference in the saturation hole concentrations for these materials is investigated by studying the incorporation and the lattice location of the impurity zinc, an acceptor when located on a group III atom site. Zinc is diffused into the III-V wafers in a sealed quartz ampoule. Particle-induced x-ray emission with ion-channeling techniques are employed to determine the exact lattice location of the zinc atoms. We have found that over 90% of all zinc atoms occupy Ga sites in the diffused GaAs samples, while for the InP case, the zinc substitutionality is dependent on the cooling rate of the sample after high-temperature diffusion. For the slowly cooled sample, a large fraction (∼90%) of the zinc atoms form random precipitates of Zn 3 P 2 and elemental Zn. However, when rapidly cooled only 60% of the zinc forms such precipitates while the rest occupies specific sites in the InP. We analyze our results in terms of the amphoteric native defect model. We show that the difference in the electrical activity of the Zn atoms in GaAs and InP is a consequence of the different location of the Fermi level stabilization energy in these two materials

Determination of Hot-Carrier Distribution Functions in Uniaxially Stressed p-Type Germanium

DEFF Research Database (Denmark)

Christensen, Ove

1973-01-01

This paper gives a description of an experimental determination of distribution functions in k→ space of hot holes in uniaxially compressed germanium. The hot-carrier studies were made at 85°K at fields up to 1000 V/cm and uniaxial stresses up to 11 800 kg/cm2. The field and stress were always in...... probabilities with stress. A model based on the nonparabolicity of the upper p3 / 2 level is proposed for the negative differential conductivity in stressed p-type Ge....... function has been assumed. The parameters of the distribution function are then fitted to the experimental modulation. The calculation of absorption was performed numerically, using a four-band k→·p→ model. This model was checked for consistency by comparing with piezoabsorption measurements performed...... in thermal equilibrium. The average carrier energy calculated from the distribution function shows a fast increase with stress and almost saturates when the strain splitting of the two p3 / 2 levels reaches the optical-phonon energy. This saturation is interpreted in terms of the change in scattering...

Investigation of Spiral and Sweeping Holes

Science.gov (United States)

Thurman, Douglas; Poinsatte, Philip; Ameri, Ali; Culley, Dennis; Raghu, Surya; Shyam, Vikram

2015-01-01

Surface infrared thermography, hotwire anemometry, and thermocouple surveys were performed on two new film cooling hole geometries: spiral/rifled holes and fluidic sweeping holes. The spiral holes attempt to induce large-scale vorticity to the film cooling jet as it exits the hole to prevent the formation of the kidney shaped vortices commonly associated with film cooling jets. The fluidic sweeping hole uses a passive in-hole geometry to induce jet sweeping at frequencies that scale with blowing ratios. The spiral hole performance is compared to that of round holes with and without compound angles. The fluidic hole is of the diffusion class of holes and is therefore compared to a 777 hole and Square holes. A patent-pending spiral hole design showed the highest potential of the non-diffusion type hole configurations. Velocity contours and flow temperature were acquired at discreet cross-sections of the downstream flow field. The passive fluidic sweeping hole shows the most uniform cooling distribution but suffers from low span-averaged effectiveness levels due to enhanced mixing. The data was taken at a Reynolds number of 11,000 based on hole diameter and freestream velocity. Infrared thermography was taken for blowing rations of 1.0, 1.5, 2.0, and 2.5 at a density ration of 1.05. The flow inside the fluidic sweeping hole was studied using 3D unsteady RANS.

The impact of production type and region on polychlorinated biphenyl (PCB), polychlorinated dibenzo-p-dioxin and dibenzofuran (PCDD/F) concentrations in Canadian chicken egg yolks.

Science.gov (United States)

Rawn, Dorothea F K; Sadler, Amy R; Quade, Sue C; Sun, Wing-Fung; Kosarac, Ivana; Hayward, Stephen; Ryan, J Jake

2012-11-01

Chicken eggs from five different production types (conventional, omega-3 enriched, free range, organic and free run) were collected, when available, from three regions (west, central and east) of Canada to determine persistent organic pollutant (POP) concentrations. Total polychlorinated biphenyl (PCB) concentrations (∑37 congeners) in yolks from the eggs ranged from 0.162 ng g(-1) lipid to 24.8 ng g(-1) lipid (median 1.25 ng g(-1) lipid) while the concentration of the sum of the 6 indicator PCBs ranged from 0.100 ng g(-1) lipid to 9.33 ng g(-1) lipid (median 0.495 ng g(-1) lipid). Total polychlorinated dibenzo-p-dioxin/dibenzofuran (PCDD/F) concentrations ranged from 2.37 pg g(-1) lipid to 382 pg g(-1) lipid (median 9.53 pg g(-1) lipid). The 2005 WHO toxic equivalency (TEQ) ranged from 0.089 pg TEQ(PCDD/F+dioxin-like[DL]-PCB) g(-1) lipid to 12.8 pg TEQ(PCDD/F+DL-PCB) g(-1) lipid (median 0.342 pg TEQ(PCDD/F+DL-PCB) g(-1) lipid). PCB and PCDD/F concentrations were significantly different (pcollection. In contrast to observations in Europe, PCB and PCDD/F concentrations in Canadian egg yolks were not impacted solely by the production type (e.g., conventional, free range, organic, etc.) used to maintain the laying chickens. Additionally, only one Canadian free range yolk from western Canada (12.8 pg TEQ(PCDD/F+DL-PCB) g(-1) lipid) exceeded the European toxic equivalent concentration limits for eggs (5 pg TEQ(PCDD/F+DL-PCB) g(-1) lipid). This differs from observations in Europe where free range/home produced eggs frequently have higher POP concentrations than eggs from other production types. Median PCB dietary intake estimates based on consumption of eggs were less than 10 ng d(-1) while median PCDD/F intakes were less than 45 pg d(-1). Crown Copyright © 2012. Published by Elsevier Ltd. All rights reserved.

Complete factorial design to adjust pH and sugar concentrations in the inoculum phase of Ralstonia solanacearum to optimize P(3HB production.

Directory of Open Access Journals (Sweden)

Karine Laste Macagnan

Full Text Available Poly(3-hydroxybutyrate (P(3HB is a biodegradable plastic biopolymer that accumulates as lipophilic inclusions in the cytoplasm of some microorganisms. The biotechnological process by which P(3HB is synthesized occurs in two phases. The first phase involves cell growth in a complex culture medium, while the second phase involves polymer accumulation in the presence of excess carbon sources. As such, the efficiency of the second phase depends on the first phase. The aim of this study was to evaluate culture media with different concentrations of sucrose and glucose and different pH values in the inoculum phase of Ralstonia solanacearum RS with the intention of identifying methods by which the biomass yield could be increased, subsequently enhancing the yield of P(3HB. The culture medium was formulated according to the experimental planning type of central composite rotational design 22. The independent variables were pH and sugar concentration (sucrose and glucose, and the dependent variables were OD600nm, dry cell weight (DCW, and P(3HB yield. The highest cell growth, estimated by the OD600nm (20.6 and DCW (5.35 values, was obtained when sucrose was used in the culture medium at a concentration above 35 g.L-1 in combination with an acidic pH. High polymer (45% accumulation was also achieved under these conditions. Using glucose, the best results for OD600nm (12.5 and DCW (2.74 were also obtained at acidic pH but with a sugar concentration at the minimum values evaluated. Due to the significant accumulation of polymer in the cells that were still in the growth phase, the accumulating microorganism P(3HB Ralstonia solanacearum RS can be classified as having type II metabolism in relation to the polymer accumulation phase, which is different from other Ralstonia spp. studied until this time.

Electron-hole liquid in semiconductors and low-dimensional structures

Science.gov (United States)

Sibeldin, N. N.

2017-11-01

The condensation of excitons into an electron-hole liquid (EHL) and the main EHL properties in bulk semiconductors and low-dimensional structures are considered. The EHL properties in bulk materials are discussed primarily in qualitative terms based on the experimental results obtained for germanium and silicon. Some of the experiments in which the main EHL thermodynamic parameters (density and binding energy) have been obtained are described and the basic factors that determine these parameters are considered. Topics covered include the effect of external perturbations (uniaxial strain and magnetic field) on EHL stability; phase diagrams for a nonequilibrium exciton-gas-EHL system; information on the size and concentration of electron-hole drops (EHDs) under various experimental conditions; the kinetics of exciton condensation and of recombination in the exciton-gas-EHD system; dynamic EHD properties and the motion of EHDs under the action of external forces; the properties of giant EHDs that form in potential wells produced by applying an inhomogeneous strain to the crystal; and effects associated with the drag of EHDs by nonequilibrium phonons (phonon wind), including the dynamics and formation of an anisotropic spatial structure of the EHD cloud. In discussing EHLs in low-dimensional structures, a number of studies are reviewed on the observation and experimental investigation of phenomena such as spatially indirect (dipolar) electron-hole and exciton (dielectric) liquids in GaAs/AlGaAs structures with double quantum wells (QWs), EHDs containing only a few electron-hole pairs (dropletons), EHLs in type-I silicon QWs, and spatially direct and dipolar EHLs in type-II silicon-germanium heterostructures.

Spin-splitting in p-type Ge devices

Energy Technology Data Exchange (ETDEWEB)

Holmes, S. N., E-mail: s.holmes@crl.toshiba.co.uk; Newton, P. J.; Llandro, J.; Mansell, R.; Barnes, C. H. W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Morrison, C.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2016-08-28

Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spin-splitting in the resistivity ρ{sub xx} agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity ρ{sub xx} with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 × 10{sup 10} cm{sup −2} in depletion mode to 1.7 × 10{sup 11} cm{sup −2} in enhancement.

Origin of the p-type character of AuCl3 functionalized carbon nanotubes

KAUST Repository

Murat, Altynbek

2014-02-13

The microscopic origin of the p-type character of AuCl3 functionalized carbon nanotubes (CNTs) is investigated using first-principles self-interaction corrected density functional theory (DFT). Recent DFT calculations suggest that the p-type character of AuCl3 functionalized CNTs is due to the Cl atoms adsorbed on the CNTs. We test this hypothesis and show that adsorbed Cl atoms only lead to a p-type character for very specific concentrations and arrangements of the Cl atoms, which furthermore are not the lowest energy configurations. We therefore investigate alternative mechanisms and conclude that the p-type character is due to the adsorption of AuCl4 molecules. The unraveling of the exact nature of the p-doping adsorbates is a key step for further development of AuCl3 functionalized CNTs in water sensor applications. © 2014 American Chemical Society.

Quantum tunneling, adiabatic invariance and black hole spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Li, Guo-Ping; Zu, Xiao-Tao [University of Electronic Science and Technology of China, School of Physical Electronics, Chengdu (China); Pu, Jin [University of Electronic Science and Technology of China, School of Physical Electronics, Chengdu (China); China West Normal University, College of Physics and Space Science, Nanchong (China); Jiang, Qing-Quan [China West Normal University, College of Physics and Space Science, Nanchong (China)

2017-05-15

In the tunneling framework, one of us, Jiang, together with Han has studied the black hole spectroscopy via adiabatic invariance, where the adiabatic invariant quantity has been intriguingly obtained by investigating the oscillating velocity of the black hole horizon. In this paper, we attempt to improve Jiang-Han's proposal in two ways. Firstly, we once again examine the fact that, in different types (Schwarzschild and Painleve) of coordinates as well as in different gravity frames, the adiabatic invariant I{sub adia} = circular integral p{sub i}dq{sub i} introduced by Jiang and Han is canonically invariant. Secondly, we attempt to confirm Jiang-Han's proposal reasonably in more general gravity frames (including Einstein's gravity, EGB gravity and HL gravity). Concurrently, for improving this proposal, we interestingly find in more general gravity theories that the entropy of the black hole is an adiabatic invariant action variable, but the horizon area is only an adiabatic invariant. In this sense, we emphasize the concept that the quantum of the black hole entropy is more natural than that of the horizon area. (orig.)

Wave Front Sensor for Solar Concentrator Control

Science.gov (United States)

2009-10-01

terrestrial-based and space-based. Both types of concentrator can be either imaging or nonimaging and they can be rigid or inflatable. Other...and T is the temperature of the absorber and propellant. In (5), Iin is input intensity with effects of the optical path through the concentrator acting...Hartmann in 1900 and was used for checking optical telescopes for aberrations. It was an array of holes in a plate placed in front of the mirror of

Effect of neutron irradiation on p-type silicon

International Nuclear Information System (INIS)

Sopko, B.

1973-01-01

The possibilities are discussed of silicon isotope reactions with neutrons of all energies. In the reactions, 30 Si is converted to a stable phosphorus isotope forming n-type impurities in silicon. The above reactions proceed as a result of thermal neutron irradiation. An experiment is reported involving irradiation of two p-type silicon single crystals having a specific resistance of 2000 ohm.cm and 5000 to 20 000 ohm.cm, respectively, which changed as a result of irradiation into n-type silicon with a given specific resistance. The specific resistance may be pre-calculated from the concentration of impurities and the time of irradiation. The effects of irradiation on other silicon parameters and thus on the suitability of silicon for the manufacture of semiconductor elements are discussed. (J.K.)

Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

Science.gov (United States)

Turgut, Erdal; Çoban, Ömer; Sarıtaş, Sevda; Tüzemen, Sebahattin; Yıldırım, Muhammet; Gür, Emre

2018-03-01

NiO thin films were grown by Radio Frequency (RF) Magnetron Sputtering method under different oxygen partial pressures, which are 0.6 mTorr, 1.3 mTorr and 2.0 mTorr. The effects of oxygen partial pressures on the thin films were analyzed through Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS) and Hall measurements. The change in the surface morphology of the thin films has been observed with the SEM and AFM measurements. While nano-pyramids have been obtained on the thin film grown at the lowest oxygen partial pressure, the spherical granules lower than 60 nm in size has been observed for the samples grown at higher oxygen partial pressures. The shift in the dominant XRD peak is realized to the lower two theta angle with increasing the oxygen partial pressures. XPS measurements showed that the Ni2p peak involves satellite peaks and two oxidation states of Ni, Ni2+ and Ni3+, have been existed together with the corresponding splitting in O1s spectrum. P-type conductivity of the grown NiO thin films are confirmed by the Hall measurements with concentrations on the order of 1013 holes/cm-3. Gas sensor measurements revealed minimum of 10% response to the 10 ppm H2 level. Enhanced responsivity of the gas sensor devices of NiO thin films is shown as the oxygen partial pressure increases.

Three Dimensional Parametric Analyses on Effect of Fibre Orientation for Stress Concentration Factor in Fibrous Composite Cantilever Plate with Central Circular Hole under Transverse Loading

Directory of Open Access Journals (Sweden)

Nitin Jain

2012-10-01

Full Text Available Normal 0 false false false EN-IN X-NONE X-NONE ABSTRACT: A number of analytical and numerical techniques are available for the two dimensional study of stress concentration around the hole(s in isotropic and composite plates subjected to in-plane or transverse loading conditions. The information on the techniques for three dimensional analyses of stress concentration factor (SCF around the hole in isotropic and composite plates subjected to transverse loading conditions is, however, limited. The present work emphasizes on the effect of fibre orientation (q on the stress concentration factor in fibrous composite plates with central circular hole under transverse static loading condition. The work is carried out for cantilever fibrous composite plates. The effects of thickness -to- width (T/A and diameter-to-width (D/A ratios upon SCF at different fibre orientation are studied. Plates of four different composite materials were considered for hole analysis in order to determine the sensitivity of SCF with elastic constants. Deflections in transverse direction were calculated and analysed. All results are presented in graphical form and discussed. The finite element formulation and its analysis were carried out using ANSYS package.ABSTRAK: Terdapat pelbagai teknik analitikal dan numerical untuk kajian tumpuan tegasan dua dimensi di sekeliling lubang-lubang dalam komposit isotropik dan plat pada satah atau keadaan bebanan melintang. Bagaimanapun, maklumat mengenai kaedah analisis tiga dimensi untuk faktor ketumpatan tegasan (SCF sekitar lubang dalam komposit isotropik dan plat pada keadaan bebanan melintang adalah terhad. Kertas ini menekankan kesan orientasi gentian (q pada faktor tumpuan tegasan dalam komposit plat bergentian dengan lubang berpusat di bawah keadaan bebanan melintang. Kajian ini dilkukan untuk cantilever plat komposit bergentian. Kesan ketebalan terhadap kelebaran plat (T/A dan diameter terhadap kelebaran komposit (D/A dengan SCF

Black-hole production from ultrarelativistic collisions

International Nuclear Information System (INIS)

Rezzolla, Luciano; Takami, Kentaro

2013-01-01

Determining the conditions under which a black hole can be produced is a long-standing and fundamental problem in general relativity. We use numerical simulations of colliding self-gravitating fluid objects to study the conditions of black-hole formation when the objects are boosted to ultrarelativistic speeds. Expanding on the previous work, we show that the collision is characterized by a type-I critical behaviour, with a black hole being produced for masses above a critical value, M c , and a partially bound object for masses below the critical one. More importantly, we show for the first time that the critical mass varies with the initial effective Lorentz factor 〈γ〉 following a simple scaling of the type M c ∼ K〈γ〉 −1.0 , thus indicating that a black hole of infinitesimal mass is produced in the limit of a diverging Lorentz factor. Furthermore, because a scaling is present also in terms of the initial stellar compactness, we provide a condition for black-hole formation in the spirit of the hoop conjecture. (fast track communication)

Fast detoxication of 2-chloro ethyl ethyl sulfide by p-type Ag_2O semiconductor nanoparticle-loaded Al_2O_3-based supports

International Nuclear Information System (INIS)

Ma, Meng-Wei; Kuo, Dong-Hau

2016-01-01

Highlights: • Detoxication of CWA surrogate of 2-chloro ethyl ethyl sulfide is investigated. • A small amount of Ag_2O on Al_2O_3-base support is sufficient to degrade 2-CEES. • Detoxication conversion >82% in 15 min is achieved for >2.5% Ag_2O/Na_2SiO_3/Al_2O_3. • Na_2SiO_3 modified Al_2O_3 to have the valley-like line pattern for depositing Ag_2O. • 2-CEES oxidation is initiated from the dominant electronic holes in p-type Ag_2O. - Abstract: p-type Ag_2O semiconductor nanoparticle-loaded Al_2O_3 or Na_2SiO_3/Al_2O_3 powders used for detoxicating the surrogate of sulfur mustard of 2-chloro ethyl ethyl sulfide (C_2H_5SCH_2CH_2Cl, 2-CEES) were investigated. Different amounts of Ag_2O and Na_2SiO_3 on catalyst supports were evaluated. Gas chromatography with a pulsed flame photometric detector (GC–PFPD) and gas chromatography coupled with a mass spectroscopy (GC–MS) were used to monitor and identify the catalytic reactions, together with reaction products analysis. The GC analyses showed that the decontamination of 2-CEES in isopropanol solvent for 15 min was above 82% efficiency for the 0.5% Na_2SiO_3/Al_2O_3 support deposited with a Ag_2O content above 2.5%. 2-(ethylthio)ethanol and 2-(ethylthio)ethanoic acid were identified as the major products after catalytic reactions. The electronic holes dominating in p-type Ag_2O is proposed to provide the key component and to initiate the catalytic reactions. The electronic hole-based detoxication mechanism is proposed.

Optical properties of ion-implanted InP and GaAs: Selectivity-excited photoluminescence spectra

International Nuclear Information System (INIS)

Makita, Yunosuke; Yamada, Akimasa; Kimura, Shinji; Niki, Shigeru; Yoshinaga, Hiroshi; Matsumori, Tokue; Iida, Tsutomu; Uekusa, Ichiro

1993-01-01

Implantation of Mg+ ions was carried out into high purity InP grown by liquid encapsulated Czochralski method. Mg+ ion-implanted InP presented the formation of plural novel emissions with increasing Mg concentration, [Mg] in the low temperature photoluminescence spectra. Selectively-excited photoluminescence (SPL) measurements were made to examine the features of two-hole replicas pertinent to the emissions of excitons bound to neutral Mg and residual Zn acceptors. Systematic variation of the emission intensities from the two types of two-hole replicas was found to be utilized for the evaluation of ion-implanted materials. The significant discrepancy of emission spectra between PL and SPL was attributed to the difference of the depth examined by using the excitation light with high and low absorption coefficient. The results revealed that the diffusion of ion-implanted Mg is extremely enhanced when [Mg] exceeds 1x10 17 cm -3

Exercise timing and blood lactate concentrations in individuals with type 2 diabetes.

Science.gov (United States)

Heden, Timothy D; Liu, Ying; Kanaley, Jill A

2017-07-01

The purpose of this study was to characterize how resistance exercise prior to or after a meal alters fasting and postprandial blood lactate concentrations in individuals with type 2 diabetes. Obese individuals with type 2 diabetes (N = 12) completed three 2-day trials, including (i) no exercise (NoEx), (ii) resistance exercise prior to dinner (Ex-M), and (iii) resistance exercise beginning at 45 min postdinner (M-Ex). During day 1 of each trial, fasting and postprandial blood lactate concentrations, perceived exertion, and substrate oxidation were measured, and subsequently on day 2 the following morning fasting blood lactate was measured. The premeal lactate incremental area under the curve (iAUC) during Ex-M (109 ± 66 mmol·L -1 ·1.6 h -1 ) was over 100-fold greater (P 0.05). Perceived exertion, substrate oxidation, or fasting blood lactate concentrations the day after testing were not different between trials. Blood lactate concentrations during acute resistance exercise are greater when exercise is performed in the postprandial period. Acute resistance exercise performed the night prior does not alter fasting blood lactate concentrations the following morning.

Interfacial charge separation and recombination in InP and quasi-type II InP/CdS core/shell quantum dot-molecular acceptor complexes.

Science.gov (United States)

Wu, Kaifeng; Song, Nianhui; Liu, Zheng; Zhu, Haiming; Rodríguez-Córdoba, William; Lian, Tianquan

2013-08-15

Recent studies of group II-VI colloidal semiconductor heterostuctures, such as CdSe/CdS core/shell quantum dots (QDs) or dot-in-rod nanorods, show that type II and quasi-type II band alignment can facilitate electron transfer and slow down charge recombination in QD-molecular electron acceptor complexes. To explore the general applicability of this wave function engineering approach for controlling charge transfer properties, we investigate exciton relaxation and dissociation dynamics in InP (a group III-V semiconductor) and InP/CdS core/shell (a heterostructure beween group III-V and II-VI semiconductors) QDs by transient absorption spectroscopy. We show that InP/CdS QDs exhibit a quasi-type II band alignment with the 1S electron delocalized throughout the core and shell and the 1S hole confined in the InP core. In InP-methylviologen (MV(2+)) complexes, excitons in the QD can be dissociated by ultrafast electron transfer to MV(2+) from the 1S electron level (with an average time constant of 11.4 ps) as well as 1P and higher electron levels (with a time constant of 0.39 ps), which is followed by charge recombination to regenerate the complex in its ground state (with an average time constant of 47.1 ns). In comparison, InP/CdS-MV(2+) complexes show similar ultrafast charge separation and 5-fold slower charge recombination rates, consistent with the quasi-type II band alignment in these heterostructures. This result demonstrates that wave function engineering in nanoheterostructures of group III-V and II-VI semiconductors provides a promising approach for optimizing their light harvesting and charge separation for solar energy conversion applications.

Surface effects in black hole physics

International Nuclear Information System (INIS)

Damour, T.

1982-01-01

This contribution reviews briefly the various analogies which have been drawn between black holes and ordinary physical objects. It is shown how, by concentrating on the properties of the surface of a black hole, it is possible to set up a sequence of tight analogies allowing one to conclude that a black hole is, qualitatively and quantitatively, similar to a fluid bubble possessing a negative surface tension and endowed with finite values of the electrical conductivity and of the shear and bulk viscosities. These analogies are valid simultaneously at the levels of electromagnetic, mechanical and thermodynamical laws. Explicit applications of this framework are worked out (eddy currents, tidal drag). The thermostatic equilibrium of a black hole electrically interacting with its surroundings is discussed, as well as the validity of a minimum entropy production principle in black hole physics. (Auth.)

A Maxwell-vector p-wave holographic superconductor in a particular background AdS black hole metric

Directory of Open Access Journals (Sweden)

Dan Wen

2018-05-01

Full Text Available We study the p-wave holographic superconductor for AdS black holes with planar event horizon topology for a particular Lovelock gravity, in which the action is characterized by a self-interacting scalar field nonminimally coupled to the gravity theory which is labeled by an integer k. As the Lovelock theory of gravity is the most general metric theory of gravity based on the fundamental assumptions of general relativity, it is a desirable theory to describe the higher dimensional spacetime geometry. The present work is devoted to studying the properties of the p-wave holographic superconductor by including a Maxwell field which nonminimally couples to a complex vector field in a higher dimensional background metric. In the probe limit, we find that the critical temperature decreases with the increase of the index k of the background black hole metric, which shows that a larger k makes it harder for the condensation to form. We also observe that the index k affects the conductivity and the gap frequency of the holographic superconductors.

A Maxwell-vector p-wave holographic superconductor in a particular background AdS black hole metric

Science.gov (United States)

Wen, Dan; Yu, Hongwei; Pan, Qiyuan; Lin, Kai; Qian, Wei-Liang

2018-05-01

We study the p-wave holographic superconductor for AdS black holes with planar event horizon topology for a particular Lovelock gravity, in which the action is characterized by a self-interacting scalar field nonminimally coupled to the gravity theory which is labeled by an integer k. As the Lovelock theory of gravity is the most general metric theory of gravity based on the fundamental assumptions of general relativity, it is a desirable theory to describe the higher dimensional spacetime geometry. The present work is devoted to studying the properties of the p-wave holographic superconductor by including a Maxwell field which nonminimally couples to a complex vector field in a higher dimensional background metric. In the probe limit, we find that the critical temperature decreases with the increase of the index k of the background black hole metric, which shows that a larger k makes it harder for the condensation to form. We also observe that the index k affects the conductivity and the gap frequency of the holographic superconductors.

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

Energy Technology Data Exchange (ETDEWEB)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

2016-12-15

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

Science.gov (United States)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

2016-12-01

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Electronic structure of p type Delta doped systems; Estructura electronica de sistemas dopadas con Delta de tipo p

Energy Technology Data Exchange (ETDEWEB)

Gaggero S, L.M.; Perez A, R. [Departamento de Fisica de los Materiales, Universidad Nacional de Educacion a Distancia, Senda del Rey s/n, 28040 Madrid (Spain)

1998-12-31

We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

Supermassive Black Holes and their Host Spheroids III. The Mbh-nsph Correlation

Science.gov (United States)

Savorgnan, Giulia A. D.

2016-04-01

The Sérsic {R}1/n model is the best approximation known to date for describing the light distribution of stellar spheroidal and disk components, with the Sérsic index n providing a direct measure of the central radial concentration of stars. The Sérsic index of a galaxy’s spheroidal component, nsph, has been shown to tightly correlate with the mass of the central supermassive black hole, MBH. The {M}{BH}{--}{n}{sph} correlation is also expected from other two well known scaling relations involving the spheroid luminosity, Lsph: the {L}{sph}{--}{n}{sph} and the {M}{BH}{--}{L}{sph}. Obtaining an accurate estimate of the spheroid Sérsic index requires a careful modeling of a galaxy’s light distribution and some studies have failed to recover a statistically significant {M}{BH}{--}{n}{sph} correlation. With the aim of re-investigating the {M}{BH}{--}{n}{sph} and other black hole mass scaling relations, we performed a detailed (I.e., bulge, disks, bars, spiral arms, rings, halo, nucleus, etc.) decomposition of 66 galaxies, with directly measured black hole masses, that had been imaged at 3.6 μm with Spitzer. In this paper, the third of this series, we present an analysis of the {L}{sph}{--}{n}{sph} and {M}{BH}{--}{n}{sph} diagrams. While early-type (elliptical+lenticular) and late-type (spiral) galaxies split into two separate relations in the {L}{sph}{--}{n}{sph} and {M}{BH}{--}{L}{sph} diagrams, they reunite into a single {M}{BH}\\propto {n}{sph}3.39+/- 0.15 sequence with relatively small intrinsic scatter (ɛ ≃ 0.25 {dex}). The black hole mass appears to be closely related to the spheroid central concentration of stars, which mirrors the inner gradient of the spheroid gravitational potential.

Site preference of Mg acceptors and improvement of p-type doping efficiency in nitride alloys.

Science.gov (United States)

Park, Ji-Sang; Chang, K J

2013-06-19

We perform first-principles density functional calculations to investigate the effect of Al and In on the formation energy and acceptor level of Mg in group-III nitride alloys. Our calculations reveal a tendency for the Mg dopants to prefer to occupy the lattice sites surrounded with Al atoms, whereas hole carriers are generated in In- or Ga-rich sites. The separation of the Mg dopants and hole carriers is energetically more favourable than a random distribution of dopants, being attributed to the local bonding effect of weak In and strong Al potentials in alloys. As a consequence, the Mg acceptor level, which represents the activation energy of Mg, tends to decrease with increasing numbers of Al next-nearest neighbours, whereas it increases as the number of In next-nearest neighbours increases. Based on the results, we suggest that the incorporation of higher Al and lower In compositions will improve the p-type doping efficiency in quaternary alloys, in comparison with GaN or AlGaN ternary alloys with similar band gaps.

Fermionic quasinormal modes for two-dimensional Horava-Lifshitz black holes

Energy Technology Data Exchange (ETDEWEB)

Stetsko, M.M. [Ivan Franko National University of Lviv, Department for Theoretical Physics, Lviv (Ukraine)

2017-06-15

To obtain fermionic quasinormal modes, the Dirac equation for two types of black holes is investigated. It is shown that two different geometries lead to distinctive types of quasinormal modes, while the boundary conditions imposed on the solutions in both cases are identical. For the first type of black hole, the quasinormal modes have continuous spectrum with negative imaginary part that provides the stability of perturbations. For the second type of the black hole, the quasinormal modes have a discrete spectrum and are completely imaginary. (orig.)

CHARACTERIZATION OF A SAMPLE OF INTERMEDIATE-TYPE ACTIVE GALACTIC NUCLEI. II. HOST BULGE PROPERTIES AND BLACK HOLE MASS ESTIMATES

Energy Technology Data Exchange (ETDEWEB)

Benitez, Erika; Cruz-Gonzalez, Irene; Martinez, Benoni; Jimenez-Bailon, Elena [Instituto de Astronomia, Universidad Nacional Autonoma de Mexico, Apdo. Postal 70-264, Mexico D.F. 04510 (Mexico); Mendez-Abreu, Jairo; Lopez-Martin, Luis [Instituto de Astrofisica de Canarias, E-38200 La Laguna, Tenerife (Spain); Fuentes-Carrera, Isaura [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional (ESFM-IPN), U.P. Adolfo Lopez Mateos, Mexico D.F. 07730 (Mexico); Chavushyan, Vahram [Instituto Nacional de Astrofisica, Optica y Electronica, Apdo. Postal 51-216, 72000 Puebla (Mexico); Leon-Tavares, Jonathan, E-mail: erika@astro.unam.mx [Aalto University Metsaehovi Radio Observatory, Metsaehovintie 114, 02540 Kylmaelae (Finland)

2013-02-15

We present a study of the host bulge properties and their relations with the black hole mass for a sample of 10 intermediate-type active galactic nuclei (AGNs). Our sample consists mainly of early-type spirals, four of them hosting a bar. For 70{sup +10} {sub -17}% of the galaxies, we have been able to determine the type of the bulge, and find that these objects probably harbor a pseudobulge or a combination of classical bulge/pseudobulge, suggesting that pseudobulges might be frequent in intermediate-type AGNs. In our sample, 50% {+-} 14% of the objects show double-peaked emission lines. Therefore, narrow double-peaked emission lines seem to be frequent in galaxies harboring a pseudobulge or a combination of classical bulge/pseudobulge. Depending on the bulge type, we estimated the black hole mass using the corresponding M {sub BH}-{sigma}* relation and found them within a range of 5.69 {+-} 0.21 < log M {sup {sigma}}*{sub BH} < 8.09 {+-} 0.24. Comparing these M {sup {sigma}}*{sub BH} values with masses derived from the FWHM of H{beta} and the continuum luminosity at 5100 A from their SDSS-DR7 spectra (M {sub BH}), we find that 8 out of 10 (80{sup +7} {sub -17}%) galaxies have black hole masses that are compatible within a factor of 3. This result would support that M {sub BH} and M {sup {sigma}}*{sub BH} are the same for intermediate-type AGNs, as has been found for type 1 AGNs. However, when the type of the bulge is taken into account, only three out of the seven (43{sup +18} {sub -15}%) objects of the sample have their M {sup {sigma}}*{sub BH} and M {sub BH} compatible within 3{sigma} errors. We also find that estimations based on the M {sub BH}-{sigma}* relation for pseudobulges are not compatible in 50% {+-} 20% of the objects.

Geologic description of cores from holes P-3 MH-1 through P-3 MH-5, Area G, Technical Area 54

International Nuclear Information System (INIS)

Purtymun, W.D.; Wheeler, M.L.; Rogers, M.A.

1978-05-01

Five horizontal holes were cored beneath Pit 3 near the southeast edge of Mesita del Buey at Area G. The pit, filled and covered by 1966, contains solid radioactive wastes. The holes were cored to obtain samples of the tuff underlying the pit to determine if there has been any migration of radionuclides by infiltration of water in the past 10 y. The five holes were collared in Unit 2b of the Tshirege Member of the Bandelier Tuff; three of the holes plunged downward into Unit 2a. This report describes the rock units penetrated by core holes and the joint characteristics observed. The locations of core samples selected for analyses are related to the floor of the pit

Temperature dependence of acceptor-hole recombination in germanium

International Nuclear Information System (INIS)

Darken, L.S.; Jellison, G.E. Jr.

1989-01-01

The recombination kinetics of several centers (Zn - , Cu - , B - , CuH - 2 , CuH - x , Zn = , Cu = , and CuH = x ) in high-purity Ge have been measured as a function of temperature from 8 to 160 K by transient capacitance techniques and are significantly faster than expected from cascade theory. The cascade theory also gives the wrong temperature dependence, and the wrong z dependence. Instead, the data are generally fit by the expression N v /4pτ c congruent kT/h (p and τ c are, respectively, the free-hole concentration in the sample and the experimental mean capture time for a center)

ATLAS simulated black hole event

CERN Multimedia

Pequenão, J

2008-01-01

The simulated collision event shown is viewed along the beampipe. The event is one in which a microscopic-black-hole was produced in the collision of two protons (not shown). The microscopic-black-hole decayed immediately into many particles. The colors of the tracks show different types of particles emerging from the collision (at the center).

Variations of leaf N and P concentrations in shrubland biomes across northern China: phylogeny, climate, and soil

Science.gov (United States)

Yang, Xian; Chi, Xiulian; Ji, Chengjun; Liu, Hongyan; Ma, Wenhong; Mohhammat, Anwar; Shi, Zhaoyong; Wang, Xiangping; Yu, Shunli; Yue, Ming; Tang, Zhiyao

2016-08-01

Concentrations of leaf nitrogen (N) and phosphorus (P) are two key traits of plants for ecosystem functioning and dynamics. Foliar stoichiometry varies remarkably among life forms. However, previous studies have focused on the stoichiometric patterns of trees and grasses, leaving a significant knowledge gap for shrubs. In this study, we explored the intraspecific and interspecific variations of leaf N and P concentrations in response to the changes in climate, soil property, and evolutionary history. We analysed 1486 samples composed of 163 shrub species from 361 shrubland sites in northern China encompassing 46.1° (86.7-132.8° E) in longitude and 19.8° (32.6-52.4° N) in latitude. Leaf N concentrations decreased with precipitation, while leaf P concentrations decreased with temperature and increased with precipitation and soil total P concentrations. Both leaf N and P concentrations were phylogenetically conserved, but leaf P concentrations were less conserved than leaf N concentrations. At the community level, climate explained more interspecific variation of leaf nutrient concentrations, while soil nutrients explained most of the intraspecific variation. These results suggested that leaf N and P concentrations responded to climate, soil, and phylogeny in different ways. Climate influenced the community chemical traits through the shift in species composition, whereas soil directly influenced the community chemical traits. New patterns were discovered using our observations on specific regions and vegetation types, which improved our knowledge of broad biogeographic patterns of leaf chemical traits.

G-factors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

NARCIS (Netherlands)

Bree, van J.; Silov, A.Yu.; Koenraad, P.M.; Flatté, M.E.; Pryor, C.E.

2012-01-01

The electron, hole, and exciton g factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g factor and

Deposition and characterization of spray pyrolysed p-type Cu2SnS3 thin film for potential absorber layer of solar cell

Science.gov (United States)

Thiruvenkadam, S.; Sakthi, P.; Prabhakaran, S.; Chakravarty, Sujay; Ganesan, V.; Rajesh, A. Leo

2018-06-01

Thin film of ternary Cu2SnS3 (CTS), a potential absorber layer for solar cells was successfully deposited by chemical spray pyrolysis technique. The GIXRD pattern revealed that the film having tetragonal Cu2SnS3 phase with the preferential orientation along (112), (200), (220) and (312) plane and it is further confirmed using Raman spectroscopy by the existence of Raman peak at 320 cm-1. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 28.8 nm. The absorption coefficient was found to be greater than the order of 105 cm-1 and bandgap of 1.70 eV. Hall effect measurement indicates the p type nature of the film with a hole concentration of 1.03 × 1016cm-3 and a hall mobility of 404 cm2/V. The properties of CTS thin film confirmed suitable to be a potential absorber layer material for photovoltaic applications.

En route to the conductivity bottleneck in p-type CuCr1-xMxO2-ySy (M = Li, Mg)

Science.gov (United States)

Mandal, P.; Mazumder, N.; Akhtar, A. J.; Roy, R.; Chattopadhyay, K. K.

2017-05-01

We extend our material design concept [P. Mandal et al. J. Phys. D: Appl. Phys. 49, 275109, (2016); N. Mazumder et al. J. Phys. Chem. Lett. 4, 3539, (2013)] further aiming to overcome the conductivity bottleneck (1 Scm-1) in p-type transparent conducting oxide (TCO). In this work, we execute the strategy of simultaneous cationic-anionic hole doping in the prototype p-TCO CuCrO2. CuCr1-xMxO2-ySy (M = Li, Mg) is prepared by solid state heating at 1150 °C. Using Rietveld analysis, the presence of Mgcr•, Licr • and SO×areconfirmed and quantified. The diffuse reflectance (DR) spectra are acquired to determine the dominant optical gap (˜ 3.5 eV) and found to be affected little upon site selective hole doping. From temperature dependence (80 - 300 K) of DC conductivity (σdc), (Licr •+SO×)dopingcan be identified to be the more plausible alternative to reach the bottleneck threshold compared to (Mgcr •+SO×) albeit of smaller σdc at 300 K.

Timelike geodesics around a charged spherically symmetric dilaton black hole

Directory of Open Access Journals (Sweden)

Blaga C.

2015-01-01

Full Text Available In this paper we study the timelike geodesics around a spherically symmetric charged dilaton black hole. The trajectories around the black hole are classified using the effective potential of a free test particle. This qualitative approach enables us to determine the type of orbit described by test particle without solving the equations of motion, if the parameters of the black hole and the particle are known. The connections between these parameters and the type of orbit described by the particle are obtained. To visualize the orbits we solve numerically the equation of motion for different values of parameters envolved in our analysis. The effective potential of a free test particle looks different for a non-extremal and an extremal black hole, therefore we have examined separately these two types of black holes.

Observation of suppressed Auger mechanism in type-I quantum well structures with delocalized electron-hole wavefunctions

Energy Technology Data Exchange (ETDEWEB)

Hassani Nia, Iman; Fathipour, Vala; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

2015-08-15

We report the first observation of non-threshold Auger mechanism for a quantum well structure with Type-I band alignment. Excitation-dependent photoluminescence measurements were used to extract the Auger recombination coefficients from 77 K up to room temperature. The results verify the role of interface mediated momentum exchange as well as suppression of Auger recombination for delocalized electron-hole wavefunctions.

Numerical Analysis of Stress Concentration in Isotropic and Laminated Plates with Inclined Elliptical Holes

Science.gov (United States)

Khechai, Abdelhak; Tati, Abdelouahab; Belarbi, Mohamed Ouejdi; Guettala, Abdelhamid

2018-03-01

The design of high-performance composite structures frequently includes discontinuities to reduce the weight and fastener holes for joining. Understanding the behavior of perforated laminates is necessary for structural design. In the current work, stress concentrations taking place in laminated and isotropic plates subjected to tensile load are investigated. The stress concentrations are obtained using a recent quadrilateral finite element of four nodes with 32 DOFs. The present finite element (PE) is a combination of two finite elements. The first finite element is a linear isoparametric membrane element and the second is a high precision Hermitian element. One of the essential objectives of the current investigation is to confirm the capability and efficiency of the PE for stress determination in perforated laminates. Different geometric parameters, such as the cutout form, sizes and cutout orientations, which have a considerable effect on the stress values, are studied. Using the present finite element formulation, the obtained results are found to be in good agreement with the analytical findings, which validates the capability and the efficiency of the proposed formulation. Finally, to understand the material parameters effect such as the orientation of fibers and degree of orthotropy ratio on the stress values, many figures are presented using different ellipse major to minor axis ratio. The stress concentration values are considerably affected by increasing the orientation angle of the fibers and degree of orthotropy.

Numerical simulation on reasonable hole-sealing depth of boreholes for gas extraction

Science.gov (United States)

Zhao, Dan; Pan, Jingtao

2018-04-01

the fluid wall-type hole-sealing technology based on solid-liquid coupling to increase the hole-sealing length to 12 m were compared. The comparison results revealed that the pure extraction amount of gas from a single borehole in the No. 2 coal reservoir of Wangjialing Coalmine was improved by 4˜6 times. In addition, the concentration of extracted gas increased from less than 1% under the traditional hole-sealing mode to 20%˜25%, with an increase of more than 20 times. The extraction effect of the No. 2 coal reservoir of the coal mine was significantly enhanced by employing the fluid-wall-type hole-sealing technology based on solid-liquid coupling.

Numerical simulation on reasonable hole-sealing depth of boreholes for gas extraction

Directory of Open Access Journals (Sweden)

Dan Zhao

2018-04-01

before and after using the fluid wall-type hole-sealing technology based on solid-liquid coupling to increase the hole-sealing length to 12 m were compared. The comparison results revealed that the pure extraction amount of gas from a single borehole in the No. 2 coal reservoir of Wangjialing Coalmine was improved by 4∼6 times. In addition, the concentration of extracted gas increased from less than 1% under the traditional hole-sealing mode to 20%∼25%, with an increase of more than 20 times. The extraction effect of the No. 2 coal reservoir of the coal mine was significantly enhanced by employing the fluid-wall-type hole-sealing technology based on solid-liquid coupling.

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

Science.gov (United States)

Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

2017-05-01

Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

Segregation of chlorine in n-type tin monosulfide ceramics: Actual chlorine concentration for carrier-type conversion

Science.gov (United States)

Iguchi, Yuki; Sugiyama, Taiki; Inoue, Kazutoshi; Yanagi, Hiroshi

2018-05-01

Tin monosulfide (SnS) is an attractive material for photovoltaic cells because of its suitable band-gap energy, high absorption coefficient, and non-toxic and abundant constituent elements. The primary drawback of this material is the lack of n-type SnS. We recently demonstrated n-type SnS by doping with Cl. However, the Cl-doped n-type SnS bulk ceramics exhibited an odd behavior in which carrier-type conversion but not electron carrier concentration depended on the Cl concentration. In this study, the electron probe microanalysis (EPMA) elemental mapping of Cl-doped SnS revealed continuous homogeneous regions with a relatively low Cl concentration along with the islands of high Cl concentration in which Sn/S is far from unity. The difference between the Cl concentration in the homogeneous region (determined by EPMA) and the bulk Cl concentration (determined by wavelength-dispersive X-ray fluorescence spectroscopy) increased with the increasing Cl doping amount. The carrier concentration and the Hall coefficient clearly depended on the Cl concentration in the homogeneous region. Carrier-type conversion was observed at the Cl concentration of 0.26 at. % (in the homogeneous region).

Measuring the $W$-hair of String Black Holes

CERN Document Server

Ellis, Jonathan Richard; Nanopoulos, Dimitri V; Ellis, John

1992-01-01

We have argued previously that the infinitely many gauge symmetries of string theory provide an infinite set of conserved (gauge) quantum numbers ($W$-hair) which characterise black hole states and maintain quantum coherence. Here we study ways of measuring the $W$-hair of spherically-symmetric four-dimensional objects with event horizons, treated as effectively two-dimensional string black holes. Measurements can be done either through the s-wave scattering of light particles off the string black-hole background, or through interference experiments of Aharonov-Bohm type. In the first type of measurement, selection rules

Asymptotic Reissner–Nordström black holes

International Nuclear Information System (INIS)

Hendi, S.H.

2013-01-01

We consider two types of Born–Infeld like nonlinear electromagnetic fields and obtain their interesting black hole solutions. The asymptotic behavior of these solutions is the same as that of a Reissner–Nordström black hole. We investigate the geometric properties of the solutions and find that depending on the value of the nonlinearity parameter, the singularity covered with various horizons. -- Highlights: •We investigate two types of the BI-like nonlinear electromagnetic fields in the Einsteinian gravity. •We analyze the effects of nonlinearity on the electromagnetic field. •We examine the influences of the nonlinearity on the geometric properties of the black hole solutions

Nucleon scattering on one-hole nuclei in the framework of the continuum RPA

International Nuclear Information System (INIS)

Abdi, S.M.

1979-01-01

It is shown that the scattering transition amplitude for nucleon-nucleus scattering on one-hole nuclei can be directly related to so-called linear response function. The theory of the linear response function is formulated in the framework of Greens functions. The linear response function obreys an equation of Bethe-Salpeter-type. From to the spectral decomposition of the response function one can deduce, that the knowledge of the response function in equivalent to the knowledge of the so-called 'particle-hole'- and 'hole-particle'-amplitudes, respectively, and the exitation energies of the compound A-particle system. In this work the binding- and resonance energies for 16 O and 16 N, respectively, have been calculated, which are needed for the scattering processes 15 N(p,n) 15 O and 15 N(n,n') 15 N, respectively. For low energies the agreement with experiment is not statisfactory, probably due to the coupling to 3p-3h-states, which was neglected in the treatment. (orig./HSI) [de

Microscopic origin of black hole reentrant phase transitions

Science.gov (United States)

Zangeneh, M. Kord; Dehyadegari, A.; Sheykhi, A.; Mann, R. B.

2018-04-01

Understanding the microscopic behavior of the black hole ingredients has been one of the important challenges in black hole physics during the past decades. In order to shed some light on the microscopic structure of black holes, in this paper, we explore a recently observed phenomenon for black holes namely reentrant phase transition, by employing the Ruppeiner geometry. Interestingly enough, we observe two properties for the phase behavior of small black holes that leads to reentrant phase transition. They are correlated and they are of the interaction type. For the range of pressure in which the system underlies reentrant phase transition, it transits from the large black holes phase to the small one which possesses higher correlation than the other ranges of pressures. On the other hand, the type of interaction between small black holes near the large/small transition line differs for usual and reentrant phase transitions. Indeed, for the usual case, the dominant interaction is repulsive whereas for the reentrant case we encounter an attractive interaction. We show that in the reentrant phase transition case, the small black holes behave like a bosonic gas whereas in the usual phase transition case, they behave like a quantum anyon gas.

White holes and eternal black holes

International Nuclear Information System (INIS)

Hsu, Stephen D H

2012-01-01

We investigate isolated white holes surrounded by vacuum, which correspond to the time reversal of eternal black holes that do not evaporate. We show that isolated white holes produce quasi-thermal Hawking radiation. The time reversal of this radiation, incident on a black hole precursor, constitutes a special preparation that will cause the black hole to become eternal. (paper)

Convergence of valence bands for high thermoelectric performance for p-type InN

International Nuclear Information System (INIS)

Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

2015-01-01

Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

Charged black holes with scalar hair

Energy Technology Data Exchange (ETDEWEB)

Fan, Zhong-Ying; Lü, H. [Center for Advanced Quantum Studies, Department of Physics,Beijing Normal University, Beijing 100875 (China)

2015-09-10

We consider a class of Einstein-Maxwell-Dilaton theories, in which the dilaton coupling to the Maxwell field is not the usual single exponential function, but one with a stationary point. The theories admit two charged black holes: one is the Reissner-Nordstrøm (RN) black hole and the other has a varying dilaton. For a given charge, the new black hole in the extremal limit has the same AdS{sub 2}×Sphere near-horizon geometry as the RN black hole, but it carries larger mass. We then introduce some scalar potentials and obtain exact charged AdS black holes. We also generalize the results to black p-branes with scalar hair.

Are Black Holes Elementary Particles?

OpenAIRE

Ha, Yuan K.

2009-01-01

Quantum black holes are the smallest and heaviest conceivable elementary particles. They have a microscopic size but a macroscopic mass. Several fundamental types have been constructed with some remarkable properties. Quantum black holes in the neighborhood of the Galaxy could resolve the paradox of ultra-high energy cosmic rays detected in Earth's atmosphere. They may also play a role as dark matter in cosmology.

Growth and characteristics of p-type doped GaAs nanowire

Science.gov (United States)

Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-05-01

The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

The Intravitreal Autologous Platelet Concentrate Injection as an Adjunct of Vitrectomy for the Treatment of Refractory Macular Holes

Science.gov (United States)

2014-03-06

Macular Hole With High Myopia (Spherical Equivalent ≤ -6.0 Diopters) or,; Large Size Macular Hole (Diameter > 600 Microns) or; Recurred or Failed Macular Hole From Previous Surgery; or Chronic Macular Hole (Symptom Duration > 6 Months)

Supersymmetry of anti-de Sitter black holes

International Nuclear Information System (INIS)

Caldarelli, Marco M.; Klemm, Dietmar

1999-01-01

We examine supersymmetry of four-dimensional asymptotically anti-de Sitter (AdS) dyonic black holes in the context of gauged N = 2 supergravity. Our calculations concentrate on black holes with unusual topology and their rotating generalizations, but we also reconsider the spherical rotating dyonic Ker-Newman-AdS black hole, whose supersymmetry properties have previously been investigated by Kostelecky and Perry within another approach. We find that in the case of spherical, toroidal or cylindrical event horizon topology, the black holes must rotate in order to preserve some supersymmetry; the non-rotating supersymmetric configurations representing naked singularities. However, we show that this is no more true for black holes whose event horizons are Riemann surfaces of genus g > 1, where we find a non-rotating extremal solitonic black hole carrying magnetic charge and permitting one Killing spinor. For the non-rotating supersymmetric configurations of various topologies, all Killing spinors are explicitly constructed

Ultrathin Cu2O as an efficient inorganic hole transporting material for perovskite solar cells

KAUST Repository

Yu, Weili; Li, Feng; Wang, Hong; Alarousu, Erkki; Chen, Yin; Lin, Bin; Wang, Lingfei; Hedhili, Mohamed N.; Li, Yangyang; Wu, Kewei; Wang, Xianbin; Mohammed, Omar F.; Wu, Tao

2016-01-01

We demonstrate that ultrathin P-type Cu2O thin films fabricated by a facile thermal oxidation method can serve as a promising hole-transporting material in perovskite solar cells. Following a two-step method, inorganic-organic hybrid perovskite

P-adic Schroedinger type equation

International Nuclear Information System (INIS)

Vladimirov, V.S.; Volovich, I.V.

1988-12-01

In p-adic quantum mechanics a Schroedinger type equation is considered. We discuss the appropriate notion of differential operators. A solution of the Schroedinger type equation is given. A new set of vacuum states for the p-adic quantum harmonic oscillator is presented. The correspondence principle with the standard quantum mechanics is discussed. (orig.)

Hole Detection for Quantifying Connectivity in Wireless Sensor Networks: A Survey

Directory of Open Access Journals (Sweden)

Pearl Antil

2014-01-01

Full Text Available Owing to random deployment, environmental factors, dynamic topology, and external attacks, emergence of holes in wireless sensor networks is inescapable. Hole is an area in sensor network around which sensors cease to sense or communicate due to drainage of battery or any fault, either temporary or permanent. Holes impair sensing and communication functions of network; thus their identification is a major concern. This paper discusses different types of holes and significance of hole detection in wireless sensor networks. Coverage hole detection schemes have been classified into three categories based on the type of information used by algorithms, computation model, and network dynamics for better understanding. Then, relative strengths and shortcomings of some of the existing coverage hole detection algorithms are discussed. The paper is concluded by highlighting various future research directions.

Chemical-free n-type and p-type multilayer-graphene transistors

Energy Technology Data Exchange (ETDEWEB)

Dissanayake, D. M. N. M., E-mail: nandithad@voxtel-inc.com [Voxtel Inc, Lockey Laboratories, University of Oregon, Eugene Oregon 97402 (United States); Eisaman, M. D. [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973 (United States); Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794 (United States); Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794 (United States)

2016-08-01

A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

A Concentration Phenomenon for p-Laplacian Equation

Directory of Open Access Journals (Sweden)

Yansheng Zhong

2014-01-01

Full Text Available It is proved that if the bounded function of coefficient Qn in the following equation  -div ⁡{|∇u|p-2∇u}+V(x|u|p-2u=Qn(x|u|q-2u,  u(x=0  as  x∈∂Ω.  u(x⟶0  as  |x|⟶∞ is positive in a region contained in Ω and negative outside the region, the sets {Qn>0} shrink to a point x0∈Ω as n→∞, and then the sequence un generated by the nontrivial solution of the same equation, corresponding to Qn, will concentrate at x0 with respect to W01,p(Ω and certain Ls(Ω-norms. In addition, if the sets {Qn>0} shrink to finite points, the corresponding ground states {un} only concentrate at one of these points. These conclusions extend the results proved in the work of Ackermann and Szulkin (2013 for case p=2.

Evolution of nonlinear perturbations inside Einstein-Yang-Mills black holes

International Nuclear Information System (INIS)

Donets, E.E.; Tentyukov, M.N.; Tsulaya, M.M.

1998-01-01

We present our results on numerical study of evolution of nonlinear perturbations inside spherically symmetric black holes in the SU(2) Einstein-Yang-Mills (EYM) theory. Recent developments demonstrate a new type of the behaviour of the metric for EYM black hole interiors; the generic metric exhibits an infinitely oscillating approach to the singularity, which is a spacelike but not of the mixmaster type. The evolution of various types of spherically symmetric perturbations, propagating from the internal vicinity of the external horizon towards the singularity is investigated in a self-consistent way using an adaptive numerical algorithm. The obtained results give strong numerical evidence in favor of nonlinear stability of the generic EYM black hole interiors. Alternatively, the EYM black hole interiors of S (schwarzschild)-type, which form only a zero measure subset in the space of all internal solutions are found to be unstable and transform to the generic type as perturbations are developed

Universality of black hole quantum computing

Energy Technology Data Exchange (ETDEWEB)

Dvali, Gia [Muenchen Univ. (Germany). Arnold Sommerfeld Center for Theoretical Physics; Max-Planck-Institut fuer Physik, Muenchen (Germany); New York Univ., NY (United States). Center for Cosmology and Particle Physics; Gomez, Cesar [Muenchen Univ. (Germany). Arnold Sommerfeld Center for Theoretical Physics; Univ. Autonoma de Madrid (Spain). Inst. de Fisica Teorica UAM-CSIC; Luest, Dieter [Muenchen Univ. (Germany). Arnold Sommerfeld Center for Theoretical Physics; Max-Planck-Institut fuer Physik, Muenchen (Germany); Omar, Yasser [Instituto de Telecomunicacoes (Portugal). Physics of Information and Quantum Technologies Group; Lisboa Univ. (Portugal). Inst. Superior Tecnico; Richter, Benedikt [Muenchen Univ. (Germany). Arnold Sommerfeld Center for Theoretical Physics; Instituto de Telecomunicacoes (Portugal). Physics of Information and Quantum Technologies Group; Lisboa Univ. (Portugal). Inst. Superior Tecnico

2017-01-15

By analyzing the key properties of black holes from the point of view of quantum information, we derive a model-independent picture of black hole quantum computing. It has been noticed that this picture exhibits striking similarities with quantum critical condensates, allowing the use of a common language to describe quantum computing in both systems. We analyze such quantum computing by allowing coupling to external modes, under the condition that the external influence must be soft-enough in order not to offset the basic properties of the system. We derive model-independent bounds on some crucial time-scales, such as the times of gate operation, decoherence, maximal entanglement and total scrambling. We show that for black hole type quantum computers all these time-scales are of the order of the black hole half-life time. Furthermore, we construct explicitly a set of Hamiltonians that generates a universal set of quantum gates for the black hole type computer. We find that the gates work at maximal energy efficiency. Furthermore, we establish a fundamental bound on the complexity of quantum circuits encoded on these systems, and characterize the unitary operations that are implementable. It becomes apparent that the computational power is very limited due to the fact that the black hole life-time is of the same order of the gate operation time. As a consequence, it is impossible to retrieve its information, within the life-time of a black hole, by externally coupling to the black hole qubits. However, we show that, in principle, coupling to some of the internal degrees of freedom allows acquiring knowledge about the micro-state. Still, due to the trivial complexity of operations that can be performed, there is no time advantage over the collection of Hawking radiation and subsequent decoding. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Charged topological black hole pair creation

International Nuclear Information System (INIS)

Mann, R.B.

1998-01-01

I examine the pair creation of black holes in space-times with a cosmological constant of either sign. I consider cosmological C-metrics and show that the conical singularities in this metric vanish only for three distinct classes of black hole metric, two of which have compact event horizons on each spatial slice. One class is a generalization of the Reissner-Nordstroem (anti-)de Sitter black holes in which the event horizons are the direct product of a null line with a 2-surface with topology of genus g. The other class consists of neutral black holes whose event horizons are the direct product of a null conoid with a circle. In the presence of a domain wall, black hole pairs of all possible types will be pair created for a wide range of mass and charge, including even negative mass black holes. I determine the relevant instantons and Euclidean actions for each case. (orig.)

Carrier concentration effects on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.; Uemura, C.

1984-01-01

Minority carrier diffusion length and carrier concentration studies have been made on room-temperature 1-MeV electron irradiated liquid-encapsulated Czochralski grown Zn-doped p-InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed

Fragmentation of neutron hole states in /sup 111,115/Sn

International Nuclear Information System (INIS)

Vdovin, A.I.; Thao, N.D.; Solov'ev, V.G.; Stoyanov, C.

1983-01-01

The quasiparticle-phonon model of the nucleus with inclusion of the interaction of one-quasiparticle states with a large number of states of the quasiparticle + phonon and quasiparticle + two phonons type is used to calculate the fragmentation of the deep hole subshells 2p/sub 1/2/, 2p/sub 3/2/, 1f/sub 5/2/, and others in the isotopes /sup 111,115/Sn. Satisfactory agreement is obtained with the results of recent (d,t) experiments in the even isotopes of tin

QCD-suppression by black hole production at the LHC

International Nuclear Information System (INIS)

Loennblad, Leif; Sjoedahl, Malin; Akesson, Torsten

2005-01-01

Possible consequences of the production of small black holes at the LHC for different scenarios with large extra dimensions are investigated. The effects from black hole production on some standard jet observables are examined, concentrating on the reduction of the QCD cross section. It is found that black hole production of partons interacting on a short enough distance indeed seem to generate a drastic drop in the QCD cross section. However from an experimental point of view this will in most cases be camouflaged by energetic radiation from the black holes

Black-hole astrophysics

Energy Technology Data Exchange (ETDEWEB)

Bender, P. [Univ. of Colorado, Boulder, CO (United States); Bloom, E. [Stanford Linear Accelerator Center, Menlo Park, CA (United States); Cominsky, L. [Sonoma State Univ., Rohnert Park, CA (United States). Dept. of Physics and Astronomy] [and others

1995-07-01

Black-hole astrophysics is not just the investigation of yet another, even if extremely remarkable type of celestial body, but a test of the correctness of the understanding of the very properties of space and time in very strong gravitational fields. Physicists` excitement at this new prospect for testing theories of fundamental processes is matched by that of astronomers at the possibility to discover and study a new and dramatically different kind of astronomical object. Here the authors review the currently known ways that black holes can be identified by their effects on their neighborhood--since, of course, the hole itself does not yield any direct evidence of its existence or information about its properties. The two most important empirical considerations are determination of masses, or lower limits thereof, of unseen companions in binary star systems, and measurement of luminosity fluctuations on very short time scales.

The Formation and Evolution of the First Massive Black Holes

OpenAIRE

Haiman, Zoltan; Quataert, Eliot

2004-01-01

The first massive astrophysical black holes likely formed at high redshifts (z>10) at the centers of low mass (~10^6 Msun) dark matter concentrations. These black holes grow by mergers and gas accretion, evolve into the population of bright quasars observed at lower redshifts, and eventually leave the supermassive black hole remnants that are ubiquitous at the centers of galaxies in the nearby universe. The astrophysical processes responsible for the formation of the earliest seed black holes...

Correlation of serum 25(OHVitD concentration with metabolism parameters in patients with type 2 diabetes

Directory of Open Access Journals (Sweden)

Yuan-Qing Qu

2016-04-01

Full Text Available Objective: To explore the correlation of serum 25(OHVitD concentration with the metabolism parameters in patients with type 2 diabetes. Methods: A total of 80 patients with type 2 diabetes who were admitted in our hospital from January, 2014 to March, 2015 were included in the study and served as the observation group, while 80 healthy individuals who came our hospital for physical examination were served as the control group. The serum 25(OHVitD concentration and metabolism parameters in the two groups were detected. The correlation of serum 25(OHVitD concentration with the metabolism parameters was analyzed. Results: The body weight, height, and BMI in the observation group were significantly higher than those in the control group (P0.05. The serum 25(OHVitD and HDL-C levels in the observation group were significantly lower than those in the control group (P<0.05, while SBP, FBG, TG, and DBP levels were significantly higher than those in the control group (P<0.05. The serum 25(OHVitD was negatively correlated with body weight, BMI, abdominal circumference, SBP, DBP, FBG, LDL-C, TG, and HbAlc. Conclusions: The serum 25(OHVitD level is closely associated with TG, LDL-C, and HbAlc, providing a reference value for the study on type 2 diabetes.

Multiscalar black holes with contingent primary hair: Mechanics and stability

International Nuclear Information System (INIS)

Mignemi, Salvatore; Wiltshire, David L.

2004-01-01

We generalize a class of magnetically charged black holes nonminimally coupled to two scalar fields previously found by one of us to the case of multiple scalar fields. The black holes possess a novel type of primary scalar hair, which we call a contingent primary hair: although the solutions possess degrees of freedom which are not completely determined by the other charges of the theory, the charges necessarily vanish in the absence of the magnetic monopole. Only one constraint relates the black hole mass to the magnetic charge and scalar charges of the theory. We obtain a Smarr-type thermodynamic relation, and the first law of black hole thermodynamics for the system. We further explicitly show in the two-scalar-field case that, contrary to the case of many other hairy black holes, the black hole solutions are stable to radial perturbations

Effects of impurities on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.

1986-01-01

Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E/sub v/+0.52 eV) in p-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed

Thermodynamic geometry of black holes in f(R) gravity

International Nuclear Information System (INIS)

Soroushfar, Saheb; Saffari, Reza; Kamvar, Negin

2016-01-01

In this paper, we consider three types (static, static charged, and rotating charged) of black holes in f(R) gravity. We study the thermodynamical behavior, stability conditions, and phase transition of these black holes. It is shown that the number and type of phase transition points are related to different parameters, which shows the dependency of the stability conditions to these parameters. Also, we extend our study to different thermodynamic geometry methods (Ruppeiner, Weinhold, and GTD). Next, we investigate the compatibility of curvature scalar of geothermodynamic methods with phase transition points of the above black holes. In addition, we point out the effect of different values of the spacetime parameters on the stability conditions of mentioned black holes. (orig.)

Quasinormal modes of black holes in Lovelock gravity

Science.gov (United States)

Yoshida, Daiske; Soda, Jiro

2016-02-01

We study quasinormal modes of black holes in Lovelock gravity. We formulate the WKB method adapted to Lovelock gravity for the calculation of quasinormal frequencies (QNFs). As a demonstration, we calculate various QNFs of Lovelock black holes in seven and eight dimensions. We find that the QNFs show remarkable features depending on the coefficients of the Lovelock terms, the species of perturbations, and spacetime dimensions. In the case of the scalar field, when we increase the coefficient of the third order Lovelock term, the real part of QNFs increases, but the decay rate becomes small irrespective of the mass of the black hole. For small black holes, the decay rate ceases to depend on the Gauss-Bonnet term. In the case of tensor type perturbations of the metric field, the tendency of the real part of QNFs is opposite to that of the scalar field. The QNFs of vector type perturbations of the metric show no particular behavior. The behavior of QNFs of the scalar type perturbations of the metric field is similar to the vector type. However, available data are rather sparse, which indicates that the WKB method is not applicable to many models for this sector.

n- and p-type transport in (110) GaAs substrates, single- and double-cleave structures

Energy Technology Data Exchange (ETDEWEB)

Roth, S.F.

2007-06-06

In this work low-dimensional systems based on GaAs/AlGaAs are investigated with either holes (p-type) in two-dimensional (2D) systems or electrons (n-type) in one-dimensional (1D) systems as charge carriers. Two-dimensional hole systems (2DHS) are grown with molecular beam epitaxy both on (110) wafers and (1 anti 10) facets with the cleaved-edge overgrowth (CEO) method. We use Si as an acceptor by modulating the growth conditions to fabricate the 2DHS in single-interface heterojunction quantum wells. The mobility of the structures reaches up to 7.0 x 10{sup 5} cm{sup 2}/Vs along the [1 anti 10]-direction and 4.1 x 10{sup 5} cm{sup 2}/Vs along the [001]-direction at a hole density of 1.2 x 10{sup 11} cm{sup -2}. Effective values for anisotropic effective hole masses and scattering times are obtained. Inversion asymmetry induced spin splitting results in different spin densities, which yield beatings of the Shubnikov-de Haas oscillations at low temperatures. In a perpendicular magnetic field the 2DHS is quantized into Landau levels, which depend nonlinearly on B due to a strong mixing of light- and heavy-holes. When the Landau levels anticross on the (110) facet, additional peaks appear within minima of the quantum Hall effect. Thermal activation measurements demonstrate a B-dependent energy gap consistent with such an anticrossing. In the second part of the thesis an electron quantum wire is fabricated with twofold cleaved-edge overgrowth. A variation of the conduction band energy in the substrate layers can directly transfer a potential modulation to the adjacent quantum wire. The concept of a transfer potential applied to a narrow two-dimensional system is demonstrated as a first step. Finally, in narrow quantum well samples a simple vertical quantum wire is successfully demonstrated and contacted at each end with n{sup +}-GaAs layers via two-dimensional (2D) leads. We characterize the 2D lead density and mobility for both cleave facets with four

A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP

International Nuclear Information System (INIS)

Shan, Y.Y.; Ling, C.C.; Fung, S.; Beling, C.D.; Zhao, Y.W.

2001-01-01

Positron annihilation techniques have been employed to investigate the formation of vacancy type of compensation defects in undoped LEC-grown InP. N-type InP becomes p-type semiconducting by short time annealing at 700 C, and then turns to be n-type again after further annealing but with a much higher resistivity. Positron lifetime measurements show that the positron average lifetime τ av increases to a high value of 247ps for the first n-type to p-type conversion and decreases to 240ps for the following p-type to n-type conversion. τ av increases slightly and saturates at 242ps upon further annealing. The results of positron annihilation Doppler-broadening measurements are consistent with the positron lifetime measurements. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy type defects and the progressive variation of their concentrations during annealing are critical to the electrical properties of the bulk InP material. (orig.)

Modeling black hole evaporation

CERN Document Server

Fabbri, Alessandro

2005-01-01

The scope of this book is two-fold: the first part gives a fully detailed and pedagogical presentation of the Hawking effect and its physical implications, and the second discusses the backreaction problem, especially in connection with exactly solvable semiclassical models that describe analytically the black hole evaporation process. The book aims to establish a link between the general relativistic viewpoint on black hole evaporation and the new CFT-type approaches to the subject. The detailed discussion on backreaction effects is also extremely valuable.

Optical conductivity calculation of a k.p model semiconductor GaAs incorporating first-order electron-hole vertex correction

Science.gov (United States)

Nurhuda, Maryam; Aziz Majidi, Muhammad

2018-04-01

The role of excitons in semiconducting materials carries potential applications. Experimental results show that excitonic signals also appear in optical absorption spectra of semiconductor system with narrow gap, such as Gallium Arsenide (GaAs). While on the theoretical side, calculation of optical spectra based purely on Density Functional Theory (DFT) without taking electron-hole (e-h) interactions into account does not lead to the appearance of any excitonic signal. Meanwhile, existing DFT-based algorithms that include a full vertex correction through Bethe-Salpeter equation may reveal an excitonic signal, but the algorithm has not provided a way to analyze the excitonic signal further. Motivated to provide a way to isolate the excitonic effect in the optical response theoretically, we develop a method of calculation for the optical conductivity of a narrow band-gap semiconductor GaAs within the 8-band k.p model that includes electron-hole interactions through first-order electron-hole vertex correction. Our calculation confirms that the first-order e-h vertex correction reveals excitonic signal around 1.5 eV (the band gap edge), consistent with the experimental data.

The holes in the ozone scare

Energy Technology Data Exchange (ETDEWEB)

Maduro, R.; Schauerhamer, R.

1992-05-01

For the authors, the ozone hole is more politic than scientific, and is caused by anthropogenic CFC, the ozone concentration reduction measured in the antarctic stratosphere is a natural phenomena: ozone destruction by chlorides and bromides coming from volcanos and oceans. The ozone hole was discovered in 1956 and not in 1985. For the greenhouse effect, the CO[sub 2] part is very small in comparison with the atmospheric water vapour part. (A.B.). refs., figs., tabs.

Role of dopants in LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P detectors

International Nuclear Information System (INIS)

Mohammadi, Kh.; Moussavi Zarandi, A.; Afarideh, H.; Shahmaleki, S.

2013-01-01

In this study, electronic structure of LiF crystal doped with Mg,Cu,P impurities was studied with WIEN2k code on the basis of FPLAPW+lo method. Results show that in Mg-doped LiF composition, an electronic trap was created with impurity concentration of 1.56% and 3.125%. In this condition, the electronic trap with increasing the percentage of the impurities up to 4.687% is annihilated. It was found, that by doping of Mg and Cu or P simultaneously, a hole-trap is created in valence band. It was realized that in LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P, Cu impurity and Li atom, have a key role in creation of levels which lead to create electronic and hole traps. Mg impurity and F atom, only have a role in creation of electronic traps. In addition, P impurity has a main role in creation of the electronic and hole traps in LiF:Mg,Cu,P. The activation energy of electronic and hole trap in LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P crystalline lattice were obtained as 0.3 and 5.5 eV, 0.92 and 3.4 eV and 0.75 and 3.1 eV, respectively. - Graphical abstract: Figure (a) and (b) shows changes in electronic structure and band gap energy of LiF crystal due to presence of Mg and Cu, Mg and P ions respectively. - Highlights: • Electronic structure of LiF, LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P materials were studied with WIEN2K code. • In LiF:Mg,Cu and LiF:Mg,Cu,P, Li atom and Cu impurity have a key role in creation of levels. • F atom and Mg impurity only have a role in creation of electronic traps. • In LiF:Mg,Cu,P, P impurity has a main role in creation of electronic and hole traps

The effect of electron and hole doping on the thermoelectric properties of shandite-type Co3Sn2S2

OpenAIRE

Mangelis, Panagiotis; Vaqueiro, Paz; Jumas, Jean-Claude; da Silva, Ivan; Smith, Ronald I; Powell, Anthony V

2017-01-01

Electron and hole doping in Co3Sn2S2, through chemical substitution of cobalt by the neighbouring elements, nickel and iron, affects both the structure and thermoelectric properties. Electron doping to form Co3-xNixSn2S2 (0 ≤ x ≤ 3) results in an expansion of the kagome layer and materials become increasingly metallic as cobalt is substituted. Conversely, hole doping in Co3-xFexSn2S2 (0 ≤ x ≤ 0.6) leads to a transition from metallic to n-type semiconducting behaviour at x = 0.5. Iron substitu...

Evolution of plant P-type ATPases

Directory of Open Access Journals (Sweden)

Christian N.S. Pedersen

2012-02-01

Full Text Available Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauria and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a moss, Selaginella moellendorffii (a primitive vascular plant, and Arabidopsis thaliana (a model flowering plant. Each organism contained sequences for all five subfamilies of P-type ATPases. Our analysis demonstrates when specific subgroups of P-type ATPases disappeared in the evolution of Angiosperms. Na/K-pump related P2C ATPases were lost with the evolution of streptophytes whereas Na+ or K+ pumping P2D ATPases and secretory pathway Ca2+-ATPases remained until mosses. An N-terminally located calmodulin binding domain in P2B ATPases can only be detected in pumps from Streptophytae, whereas, like in animals, a C-terminally localized calmodulin binding domain might be present in chlorophyte P2B Ca2+-ATPases. Chlorophyte genomes encode P3A ATPases resembling protist plasma membrane H+-ATPases and a C-terminal regulatory domain is missing. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps.

Black Hole Safari: Tracking Populations and Hunting Big Game

Science.gov (United States)

McConnell, N. J.

2013-10-01

Understanding the physical connection, or lack thereof, between the growth of galaxies and supermassive black holes is a key challenge in extragalactic astronomy. Dynamical studies of nearby galaxies are building a census of black hole masses across a broad range of galaxy types and uncovering statistical correlations between galaxy bulge properties and black hole masses. These local correlations provide a baseline for studying galaxies and black holes at higher redshifts. Recent measurements have probed the extremes of the supermassive black hole population and introduced surprises that challenge simple models of black hole and galaxy co-evolution. Future advances in the quality and quantity of dynamical black hole mass measurements will shed light upon the growth of massive galaxies and black holes in different cosmic environments.

Effect of i.p. insulin administration onIGF1 and IGFBP1 in type1 diabetes

NARCIS (Netherlands)

van Dijk, P R; Logtenberg, S J J; Groenier, K H; Kleefstra, N; Bilo, H J G; Arnqvist, H J

2014-01-01

In type 1 diabetes mellitus (T1DM), low concentrations of IGF1 and high concentrations of IGF-binding protein 1 (IGFBP1) have been reported. It has been suggested that these abnormalities in the GH-IGF1 axis are due to low insulin concentrations in the portal vein. We hypothesized that the i.p.

Variations of current profiles in tokamaks. Formation mechanism and confinement property of current-hole configuration

International Nuclear Information System (INIS)

Takizuka, Tomonori

2003-01-01

The formation mechanism of the current hole in tokamak plasmas is reviewed. Experimental results of JT-60U are shown. Increase of the off-central noninductive current is a key factor for the current-hole formation. The internal Transport Barrier (ITB), which generates large bootstrap current, plays an important role. The central current density in the hole stays nearly 0. The idea of a new equilibrium for a tokamak plasma with a current hole is introduced. This equilibrium configuration called Axisymmetric Tri-Magnetic-Islands (ATMI) equilibrium', has three islands along the R direction (a central-negative-current island and side-positive-current islands). The equilibrium is stable with the elongation coils when the current in the ATMI region is limited to a small amount. The confinement properties of a current-hole configuration with box-type ITB is described. A scaling of the core poloidal beta inside the ITB, β p,core , is given as ε f β p,core approx. = 1, which suggests the equilibrium limit (ε f : inverse aspect ratio at the ITB foot). Though the core stored energy is little dependent on the heating power, the estimated heat diffusivity in the ITB region moderately correlates with a neoclassical diffusivity. (author)

Effects of pH and chloride concentration on pitting corrosion of AA6061 aluminum alloy

International Nuclear Information System (INIS)

Zaid, B.; Saidi, D.; Benzaid, A.; Hadji, S.

2008-01-01

Effects of pH solution and chloride (Cl - ) ion concentration on the corrosion behaviour of alloy AA6061 immersed in aqueous solutions of NaCl have been investigated using measurements of weight loss, potentiodynamic polarisation, linear polarisation, cyclic polarisation experiment combined with open circuit potential transient technique and optical or scanning electron microscopy. The corrosion behaviour of the AA6061 aluminum alloy was found to be dependant on the pH and chloride concentration [NaCl] of solution. In acidic or slightly neutral solutions, general and pitting corrosion occurred simultaneously. In contrast, exposure to alkaline solutions results in general corrosion. Experience revealed that the alloy AA6061 was susceptible to pitting corrosion in all chloride solution of concentration ranging between 0.003 wt% and 5.5 wt% NaCl and an increase in the chloride concentration slightly shifted both the pitting E pit and corrosion E cor potentials to more active values. In function of the conditions of treatment, the sheets of the alloy AA6061 undergo two types of localised corrosion process, leading to the formation of hemispherical and crystallographic pits. Polarisation resistance measurements in acidic (pH = 2) and alkaline chloride solutions (pH = 12) which are in good agreement with those of weight loss, show that the corrosion kinetic is minimised in slightly neutral solutions (pH = 6)

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Energy Technology Data Exchange (ETDEWEB)

Geissbühler, Jonas, E-mail: jonas.geissbuehler@epfl.ch; Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain [CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland); Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland)

2015-08-24

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

A simple model for normal state in- and out-of-plane resistivities of hole doped cuprates

Energy Technology Data Exchange (ETDEWEB)

Naqib, S.H., E-mail: shnaqib.physicsru@gmail.com [Department of Physics, University of Rajshahi, Rajshahi 6205 (Bangladesh); Azam, M. Afsana [Department of Physics, University of Rajshahi, Rajshahi 6205 (Bangladesh); Department of Physics, DUET, Gazipur, Dhaka (Bangladesh); Uddin, M. Borhan [Department of Physics, University of Rajshahi, Rajshahi 6205 (Bangladesh); Department of CSE, International Islamic University Chittagong, Sitakunda, IIUC Rd, Kumira 4314 Bangladesh (Bangladesh); Cole, J.R. [Cambridge Flow Solutions Ltd., Histon, Cambridge CB24 9AD (United Kingdom)

2016-05-15

Highlights: • In- and out-of-plane charge transport have been investigated for hole doped cuprates. • Effect of quantum critical point (QCP) on non-Fermi liquid behavior has been explored. • The impact of pseudogap (PG) on carrier scattering rate has been studied. • In- and out-of plane resistivities have been modeled by considering the QCP and the PG. • The model explains the non-Fermi liquid charge transport in hole doped cuprates. - Abstract: The highly anisotropic and qualitatively different nature of the normal state in- and out-of-plane charge dynamics in high-T{sub c} cuprates cannot be accommodated within the conventional Boltzmann transport theory. The variation of in-plane and out-of-plane resistivities with temperature and hole content are anomalous and cannot be explained by Fermi-liquid theory. In this study, we have proposed a simple phenomenological model for the dc resistivity of cuprates by incorporating two firmly established generic features of all hole doped cuprate superconductors—(i) the pseudogap in the quasiparticle energy spectrum and (ii) the T-linear resistivity at high temperatures. This T-linear behavior over an extended temperature range can be attributed to a quantum criticality, affecting the electronic phase diagram of cuprates. Experimental in-plane and out-of-plane resistivities (ρ{sub p}(T) and ρ{sub c}(T), respectively) of double-layer Y(Ca)123 have been analyzed using the proposed model. This phenomenological model describes the temperature and the hole content dependent resistivity over a wide range of temperature and hole content, p. The characteristic PG energy scale, ε{sub g}(p), extracted from the analysis of the resistivity data, agrees quite well with those found in variety of other experiments. Various other extracted parameters from the analysis of ρ{sub p}(T) and ρ{sub c}(T) data showed systematic trends with changing hole concentration. We have discussed important features found from the analysis in

NuSTAR observations of the black holes GS 1354-645: Evidence of rapid black hole spin

DEFF Research Database (Denmark)

El-Batal, A. M.; Miller, J. M.; Reynolds, M. T.

2016-01-01

We present the results of a NuSTAR study of the dynamically confirmed stellar-mass black hole GS 1354-645. The source was observed during its 2015 "hard" state outburst; we concentrate on spectra from two relatively bright phases. In the higher-flux observation, the broadband NuSTAR spectra reveal...... a clear, strong disk reflection spectrum, blurred by a degree that requires a black hole spin of a = cf/GM(2) >= 0.98 (1 sigma statistical limits only). The fits also require a high inclination: 0 similar or equal to 75 (2)degrees. Strong "dips" are sometimes observed in the X-ray light curves of sources...... in stellar-mass black holes, and inner accretion flow geometries at moderate accretion rates....

Cosmology with primordial black holes

International Nuclear Information System (INIS)

Lindley, D.

1981-09-01

Cosmologies containing a substantial amount of matter in the form of evaporating primordial black holes are investigated. A review of constraints on the numbers of such black holes, including an analysis of a new limit found by looking at the destruction of deuterium by high energy photons, shows that there must be a negligible population of small black holes from the era of cosmological nucleosynthesis onwards, but that there are no strong constraints before this time. The major part of the work is based on the construction of detailed, self-consistent cosmological models in which black holes are continually forming and evaporating The interest in these models centres on the question of baryon generation, which occurs via the asymmetric decay of a new type of particle which appears as a consequence of the recently developed Grand Unified Theories of elementary particles. Unfortunately, there is so much uncertainty in the models that firm conclusions are difficult to reach; however, it seems feasible in principle that primordial black holes could be responsible for a significant part of the present matter density of the Universe. (author)

Auger recombination in p-type InAs and in Gasub(x)Insub(1-x)As solid solutions

International Nuclear Information System (INIS)

Zotova, N.V.; Yassievich, I.N.

1977-01-01

The probability of the Auger recombination in p-type semiconductors, which is accompanied by transition of the second hole into the zone, splitted by spin-orbital interaction, was calculated. The above process is effective when the energy of spin-orbital splitting off Δ is close to the forbidden zone energy Esub(g), which takes place in the case of InAs, GaSb and solid solutions based on these compounds. The calculation is performed for the non-degenerate hole gas at a finite difference of Esub(g) - Δ. By means of the study of radiative recombination in InAs and Gasub(x)Insub(1-x)As solid solutions with small contents of GaAs (0 17 cm -3 . It is found that the quantum yield of radiative recombination increases sharply in Gasub(x)Insub(1-x)As solid solutions with the increase of x, which is associated with the increase of the difference of Esub(g) - Δ; the radiative recombination intensity increases in correspondence with the theoretical calculation made

Area spectrum of extremal Reissner-Nordstroem black holes from quasinormal modes

International Nuclear Information System (INIS)

Setare, M.R.

2004-01-01

Using the quasinormal mode frequency of extremal Reissner-Nordstroem black holes, we obtain the area spectrum for these types of black holes. We show that the area and entropy black hole horizon are equally spaced. Our results for the spacing of the area spectrum differ from that for Schwarzschild black holes

Low-cost copper complexes as p-dopants in solution processable hole transport layers

Energy Technology Data Exchange (ETDEWEB)

Kellermann, Renate [Department for Materials Science and Engineering, Chair for Materials for Electronics and Energy Technology, Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen 91058 (Germany); Siemens AG – Corporate Technology, Guenther-Scharowsky-Str. 1, Erlangen 91058 (Germany); Taroata, Dan; Maltenberger, Anna; Hartmann, David; Schmid, Guenter [Siemens AG – Corporate Technology, Guenther-Scharowsky-Str. 1, Erlangen 91058 (Germany); Brabec, Christoph J. [Department for Materials Science and Engineering, Chair for Materials for Electronics and Energy Technology, Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen 91058 (Germany)

2015-09-07

We demonstrate the usage of the Lewis-acidic copper(II)hexafluoroacetylacetonate (Cu(hfac){sub 2}) and copper(II)trifluoroacetylacetonate (Cu(tfac){sub 2}) as low-cost p-dopants for conductivity enhancement of solution processable hole transport layers based on small molecules in organic light emitting diodes (OLEDs). The materials were clearly soluble in mixtures of environmentally friendly anisole and xylene and spin-coated under ambient atmosphere. Enhancements of two and four orders of magnitude, reaching 4.0 × 10{sup −11} S/cm with a dopant concentration of only 2 mol% Cu(hfac){sub 2} and 1.5 × 10{sup −9} S/cm with 5 mol% Cu(tfac){sub 2} in 2,2′,7,7′-tetra(N,N-ditolyl)amino-9,9-spiro-bifluorene (spiro-TTB), respectively, were achieved. Red light emitting diodes were fabricated with reduced driving voltages and enhanced current and power efficiencies (8.6 lm/W with Cu(hfac){sub 2} and 5.6 lm/W with Cu(tfac){sub 2}) compared to the OLED with undoped spiro-TTB (3.9 lm/W). The OLED with Cu(hfac){sub 2} doped spiro-TTB showed an over 8 times improved LT{sub 50} lifetime of 70 h at a starting luminance of 5000 cd/m{sup 2}. The LT{sub 50} lifetime of the reference OLED with PEDOT:PSS was only 8 h. Both non-optimized OLEDs were operated at similar driving voltage and power efficiency.

Entropy of Iterated Function Systems and Their Relations with Black Holes and Bohr-Like Black Holes Entropies

Directory of Open Access Journals (Sweden)

Christian Corda

2018-01-01

Full Text Available In this paper we consider the metric entropies of the maps of an iterated function system deduced from a black hole which are known the Bekenstein–Hawking entropies and its subleading corrections. More precisely, we consider the recent model of a Bohr-like black hole that has been recently analysed in some papers in the literature, obtaining the intriguing result that the metric entropies of a black hole are created by the metric entropies of the functions, created by the black hole principal quantum numbers, i.e., by the black hole quantum levels. We present a new type of topological entropy for general iterated function systems based on a new kind of the inverse of covers. Then the notion of metric entropy for an Iterated Function System ( I F S is considered, and we prove that these definitions for topological entropy of IFS’s are equivalent. It is shown that this kind of topological entropy keeps some properties which are hold by the classic definition of topological entropy for a continuous map. We also consider average entropy as another type of topological entropy for an I F S which is based on the topological entropies of its elements and it is also an invariant object under topological conjugacy. The relation between Axiom A and the average entropy is investigated.

Study of the impurity photoconductivity in p-InSb using epitaxial p{sup +} contacts

Energy Technology Data Exchange (ETDEWEB)

Eminov, Sh. O., E-mail: shikhamirem@gmail.com [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

2016-08-15

The optical absorption coefficient α in p{sup +}-InSb layers (with hole concentrations of p ≈ 1 × 10{sup 17}–1.2 × 10{sup 19} cm{sup –3}), grown by liquid-phase epitaxy on p-InSb substrates, is measured in the spectral range of 5-12 µm at 90 K, and the impurity photoconductivity is measured (at 60 and 90 K) in p{sup +}–p structures. It is found that a in the p{sup +} layers reaches a value of 7000 cm{sup –1} (at p ≈ 2 × 10{sup 19} cm{sup –1}). It is shown that the measured substrate value of (α ≈1–3 cm{sup –1}) is overestimated in comparison with estimates (α ≈ 0.1 cm{sup –1}) based on comparing the photoconductivity data. This discrepancy is explained by the fact that the optical transitions of holes responsible for photoconductivity are obscured by the excitation of electrons to the conduction band. The photoionization cross section for these transitions does not exceed 1 × 10{sup –15} cm{sup 2}.

Stationary black holes as holographs

Energy Technology Data Exchange (ETDEWEB)

Racz, Istvan [Yukawa Institute for Theoretical Physics, Kyoto University, Kyoto 606-01 (Japan); MTA KFKI, Reszecske- es Magfizikai Kutatointezet, H-1121 Budapest, Konkoly Thege Miklos ut 29-33 (Hungary)

2007-11-21

Smooth spacetimes possessing a (global) one-parameter group of isometries and an associated Killing horizon in Einstein's theory of gravity are investigated. No assumption concerning the asymptotic structure is made; thereby, the selected spacetimes may be considered as generic distorted stationary black holes. First, spacetimes of arbitrary dimension, n {>=} 3, with matter satisfying the dominant energy condition and allowing a non-zero cosmological constant are investigated. In this part, complete characterization of the topology of the event horizon of 'distorted' black holes is given. It is shown that the topology of the event horizon of 'distorted' black holes is allowed to possess a much larger variety than that of the isolated black hole configurations. In the second part, four-dimensional (non-degenerate) electrovac distorted black hole spacetimes are considered. It is shown that the spacetime geometry and the electromagnetic field are uniquely determined in the black hole region once the geometry of the bifurcation surface and one of the electromagnetic potentials are specified there. Conditions guaranteeing the same type of determinacy, in a neighbourhood of the event horizon, on the domain of outer communication side are also investigated. In particular, they are shown to be satisfied in the analytic case.

Fragmentation of neutron-hole strengths in 59Ni observed in the 60Ni(p, d) 59Ni reaction at 65 MeV

International Nuclear Information System (INIS)

Matoba, M.; Ohgaki, H.; Kugimiya, H.; Ijiri, H.; Maki, T.; Nakano, M.

1995-01-01

The 60 Ni(p, d) 59 Ni reaction has been studied with 65 MeV polarized protons. Angular distributions of the differential cross section and analyzing power have been measured for neutron hole states in 59 Ni up to the excitation energies of 7 MeV. The data analysis with a standard distorted-wave Born approximation theory provides transferred angular momenta l, j and spectroscopic factors for thirty-nine transitions. The nuclear damping mechanism of the single hole states is discussed. ((orig.))

Supersymmetric black holes from Toda theories

International Nuclear Information System (INIS)

Delduc, F.; Saveliev, M.V.; Gervais, J.L.

1992-07-01

By the example of nonabelian Toda type theory associated with the Lie superalgebra osp(2/4) it is shown that this integrable dynamical system is relevant to a black hole background metric in the corresponding target space. In the even sector the model under consideration reduces to the exactly solvable conformal theory (nonabelian B 2 Toda system) in the presence of a black hole. (author) 6 refs

Dissolved organic carbon (DOC) concentrations in UK soils and the influence of soil, vegetation type and seasonality.

Science.gov (United States)

van den Berg, Leon J L; Shotbolt, Laura; Ashmore, Mike R

2012-06-15

Given the lack of studies which measured dissolved organic carbon (DOC) over long periods, especially in non-forest habitat, the aim of this study was to expand the existing datasets with data of mainly non-forest sites that were representative of the major soil and habitat types in the UK. A further aim was to predict DOC concentrations from a number of biotic and abiotic explanatory variables such as rainfall, temperature, vegetation type and soil type in a multivariate way. Pore water was sampled using Rhizon or Prenart samplers at two to three week intervals for 1 year. DOC, pH, organic carbon, carbon/nitrogen (C:N) ratios of soils and slope were measured and data on vegetation, soil type, temperature and precipitation were obtained. The majority of the variation in DOC concentrations between the UK sites could be explained by simple empirical models that included annual precipitation, and soil C:N ratio with precipitation being negatively related to DOC concentrations and C:N ratio being positively related to DOC concentrations. Our study adds significantly to the data reporting DOC concentrations in soils, especially in grasslands, heathlands and moorlands. Broad climatic and site factors have been identified as key factors influencing DOC concentrations. Copyright © 2012 Elsevier B.V. All rights reserved.

Effects of Au nanoparticle addition to hole transfer layer in organic solar cells based on copper naphthalocyanine and fullerene

Institute of Scientific and Technical Information of China (English)

Akihiko Nagata; Takeo Okun; Tsuyoshi Akiyaman; Atsushi Suzuki

2014-01-01

Organic solar cells based on copper naphthalocyanine (CuNc) and fullerene (C60) were fabricated, and their photovoltaic properties were investigated. C60 and CuNc were used as n-type and p-type semiconductors, respectively. In addition, the effect of Au nanoparticle addition on a hole transfer layer was investigated, and the power conversion efficiency of the devices was improved after blending the Au nanoparticles into the hole transport layer. Nanostructures of Au nanoparticles were investigated by transmission electron microscopy and X-ray diffraction. Energy levels of molecules were calculated by molecular orbital calculations, and the nanostructure and electronic properties were discussed.

A Lifshitz black hole in four dimensional R2 gravity

International Nuclear Information System (INIS)

Cai Ronggen; Liu Yan; Sun Yawen

2009-01-01

We consider a higher derivative gravity theory in four dimensions with a negative cosmological constant and show that vacuum solutions of both Lifshitz type and Schroedinger type with arbitrary dynamical exponent z exist in this system. Then we find an analytic black hole solution which asymptotes to the vacuum Lifshitz solution with z = 3/2 at a specific value of the coupling constant. We analyze the thermodynamic behavior of this black hole and find that the black hole has zero entropy while non-zero temperature, which is very similar to the case of BTZ black holes in new massive gravity at a specific coupling. In addition, we find that the three dimensional Lifshitz black hole recently found by E. Ayon-Beato et al. has a negative entropy and mass when the Newton constant is taken to be positive.

Piezoresistance in p-type silicon revisited

DEFF Research Database (Denmark)

Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads

2008-01-01

We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find...... to experiments. Finally, we present a fitting function of temperature and acceptor density to the 6×6 model that can be used to predict the piezoresistance effect in p-type silicon. ©2008 American Institute of Physics...... that the relaxation-time model needs to include all scattering mechanisms in order to obtain correct temperature and acceptor density dependencies. The k·p results are compared to results obtained using a recent tight-binding (TB) model. The magnitude of the pi44 piezocoefficient obtained from the TB model...

Black holes in Lorentz-violating gravity theories

International Nuclear Information System (INIS)

Barausse, Enrico; Sotiriou, Thomas P

2013-01-01

Lorentz symmetry and the notion of light cones play a central role in the definition of horizons and the existence of black holes. Current observations provide strong indications that astrophysical black holes do exist in Nature. Here we explore what happens to the notion of a black hole in gravity theories where local Lorentz symmetry is violated, and discuss the relevant astrophysical implications. Einstein-aether theory and Hořava gravity are used as the theoretical background for addressing this question. We review earlier results about static, spherically symmetric black holes, which demonstrate that in Lorentz-violating theories there can be a new type of horizon and, hence, a new notion of black hole. We also present both known and new results on slowly rotating black holes in these theories, which provide insights on how generic these new horizons are. Finally, we discuss the differences between black holes in Lorentz-violating theories and in General Relativity, and assess to what extent they can be probed with present and future observations. (paper)

Predicting and measurement of pH of seawater reverse osmosis concentrates

KAUST Repository

Waly, Tarek

2011-10-01

The pH of seawater reverse osmosis plants (SWRO) is the most influential parameter in determining the degree of supersaturation of CaCO3 in the concentrate stream. For this, the results of pH measurements of the concentrate of a seawater reverse osmosis pilot plant were compared with pH calculations based on the CO2-HCO3 --CO3 2- system equilibrium equations. Results were compared with two commercial software programs from membrane suppliers and also the software package Phreeqc. Results suggest that the real concentrate pH is lower than that of the feed and that none of the used programs was able to predict correctly real pH values. In addition, the effect of incorporating the acidity constant calculated for NaCl medium or seawater medium showed a great influence on the concentrate pH determination. The HCO3 - and CO3 2- equilibrium equation using acidity constants developed for seawater medium was the only method able to predict correctly the concentrate pH. The outcome of this study indicated that the saturation level of the concentrate was lower than previously anticipated. This was confirmed by shutting down the acid and the antiscalants dosing without any signs of scaling over a period of 12 months. © 2011 Elsevier B.V.

Hole-induced d"0 ferromagnetism enhanced by Na-doping in GaN

International Nuclear Information System (INIS)

Zhang, Yong; Li, Feng

2017-01-01

The d"0 ferromagnetism in wurtzite GaN is investigated by the first-principle calculations. It is found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga vacancy and Na doping can introduce holes into GaN. However, Ga vacancy has a high formation energy, and is thus unlikely to occur in a significant concentration. In contrast, Na doping has relatively low formation energy. Under N-rich growth condition, Na doping with a sufficient concentration can be achieved, which can induce half-metallic ferromagnetism in GaN. Moreover, the estimated Curie temperature of Na-doped GaN is well above the room temperature. - Highlights: • Hole-induced ferromagnetism in GaN is confirmed. • Both Ga Vacancy and Na-doping can introduce hole into GaN. • The concentration of Ga vacancy is too low to induce detectable ferromagnetism. • Na-doped GaN is a possible ferromagnet with a high curie-temperature.

Superconductivity in Ti3P-type compounds

International Nuclear Information System (INIS)

Wills, J.O.; Hein, R.A.; Waterstrat, R.M.

1978-01-01

A study of 12 intermetallic A 3 B compounds which crsytallize in the tetragonal Ti 3 P-type structure has revealed five new superconductors with transition temperatures below 1 K: Zr 3 Si, Zr 3 Ge, Zr 3 P, V 3 P, and Nb 3 Ge (extrapolated from the alloy series Nb-Ge-As). In addition, two compounds, Zr 3 Sb and Ta 3 Ge, having the Ni 3 P structure type are found to be superconducting below 1 K. Within the Ti 3 P-type compounds, those with the lighter ''B'' elements in a given column of the Periodic Table have the higher transition temperatures. Critical-magnetic-field and electrical-resistivity data are reported for the superconducting Ti 2 P-type compound Nb 3 P, which permit one to estimate the Ginzburg-Landau kappa parameter and the electronic-specific-heat coefficient γ. The kappa value of 8.4 indicates that this material is type II, and the γ value of 1.3 mJ/mole K 2 for Nb 3 P is probably related to its low transition temperature relative to many A15 compounds

Validity of Maxwell equal area law for black holes conformally coupled to scalar fields in AdS5 spacetime

International Nuclear Information System (INIS)

Miao, Yan-Gang; Xu, Zhen-Ming

2017-01-01

We investigate the P - V criticality and the Maxwell equal area law for a five-dimensional spherically symmetric AdS black hole with a scalar hair in the absence of and in the presence of a Maxwell field, respectively. Especially in the charged case, we give the exact P - V critical values. More importantly, we analyze the validity and invalidity of the Maxwell equal area law for the AdS hairy black hole in the scenarios without and with charges, respectively. Within the scope of validity of the Maxwell equal area law, we point out that there exists a representative van der Waals-type oscillation in the P - V diagram. This oscillating part, which indicates the phase transition from a small black hole to a large one, can be replaced by an isobar. The small and large black holes have the same Gibbs free energy. We also give the distribution of the critical points in the parameter space both without and with charges, and we obtain for the uncharged case the fitting formula of the co-existence curve. Meanwhile, the latent heat is calculated, which gives the energy released or absorbed between the small and large black hole phases in the isothermal-isobaric procedure. (orig.)

Successful closure of treatment-naïve, flat edge (Type II, full-thickness macular hole using inverted internal limiting membrane flap technique

Directory of Open Access Journals (Sweden)

Hussain N

2016-10-01

Full Text Available Nazimul Hussain,1 Anjli Hussain2 1Department of Ophthalmology, Al Zahra Hospital, 2Al Zahra Medical Center, Dubai, United Arab Emirates Objective: The objective of this study was to present the outcome of the internal limiting membrane (ILM peeling flap technique for a treatment-naïve, flat edge (Type II, full-thickness macular hole (MH. Methods: A 52-year-old man presented with complaints of decreased vision and seeing black spot. He was diagnosed to have a flat edge, full-thickness MH, which was confirmed by optical coherence tomography (OCT. He underwent 23G vitrectomy with brilliant blue G-assisted inverted ILM peeling with an inverted flap over the hole followed by fluid gas exchange. Results: Postoperative follow-up until 3 months showed successful closure of the MH, which was confirmed by OCT. The best-corrected visual acuity improved from baseline 6/60 to 6/12 at the final follow-up. Conclusion: Using the inverted ILM flap technique, a treatment-naïve, flat edge (Type II, full thickness MH achieved successful anatomical and functional outcomes. Keywords: macular hole, inverted ILM, optical coherence tomography

Dancing with Black Holes

Science.gov (United States)

Aarseth, S. J.

2008-05-01

We describe efforts over the last six years to implement regularization methods suitable for studying one or more interacting black holes by direct N-body simulations. Three different methods have been adapted to large-N systems: (i) Time-Transformed Leapfrog, (ii) Wheel-Spoke, and (iii) Algorithmic Regularization. These methods have been tried out with some success on GRAPE-type computers. Special emphasis has also been devoted to including post-Newtonian terms, with application to moderately massive black holes in stellar clusters. Some examples of simulations leading to coalescence by gravitational radiation will be presented to illustrate the practical usefulness of such methods.

Intersecting D-branes and black hole entropy

NARCIS (Netherlands)

Behrndt, Klaus; Bergshoeff, Eric

1996-01-01

In four dimensions there are 4 different types of extremal Maxwell/scalar black holes characterized by a scalar coupling parameter a with a = 0, 1/√3, 1, √3. These black holes can be described as intersections of ten-dimensional non-singular Ramond-Ramond objects, i.e, D-branes, waves and

Effect of ventilation type on radon concentration at places of work

International Nuclear Information System (INIS)

Oksanen, E.

1994-01-01

Indoor radon ( 222 Rn) concentrations were measured at 76 child care facilities and 36 schools in southern Finland. The buildings had three different types of ventilation systems: mechanical air supply and exhaust, mechanical exhaust, and natural ventilation, the first being most common. The effect of the ventilation type on the long-term radon concentration was studied in child care facilities. The radon concentrations were highest in the naturally ventilated buildings. The mechanical air supply and exhaust system maintained the lowest values in cold wintertime. In school buildings both the long-term radon concentration and short-term radon and daughter concentrations were measured. The correlation of the ventilation type and the radon concentration was not obvious in this group of measurements, but the radon concentrations and the equilibrium factors were highest in buildings with natural ventilation. Radon concentrations were generally lower during the working hours than during the one-month period, as expected. (author)

Supersymmetry production from a TeV scale black hole at CERN LHC

International Nuclear Information System (INIS)

Chamblin, Andrew; Cooper, Fred; Nayak, Gouranga C.

2004-01-01

If the fundamental Planck scale is near a TeV, then we should expect to see TeV scale black holes at the CERN LHC. Similarly, if the scale of supersymmetry (SUSY) breaking is sufficiently low, then we might expect to see light supersymmetric particles in the next generation of colliders. If the mass of the supersymmetric particle is of order a TeV and is comparable to the temperature of a typical TeV scale black hole, then such sparticles will be copiously produced via Hawking radiation: The black hole will act as a resonance for sparticles, among other things. In this paper we compare various signatures for SUSY production at LHC, and we contrast the situation where the sparticles are produced directly via parton fusion processes with the situation where they are produced indirectly through black hole resonances. We found that black hole resonances provide a larger source for heavy mass SUSY (squark and gluino) production than the direct perturbative QCD-SUSY production via parton fusion processes depending on the values of the Planck mass and black hole mass. Hence black hole production at LHC may indirectly act as a dominant channel for SUSY production. We also found that the differential cross section dσ/dp t for SUSY production increases as a function of the p t (up to p t equal to about 1 TeV or more) of the SUSY particles (squarks and gluinos), which is in sharp contrast with the pQCD predictions where the differential cross section dσ/dp t decreases as p t increases for high p t about 1 TeV or higher. This is a feature for any particle emission from a TeV scale black hole as long as the temperature of the black hole is very high (∼TeV). Hence the measurement of increase of dσ/dp t with p t for p t up to about 1 TeV or higher for final state particles might be a useful signature for black hole production at LHC

Hole Detection for Quantifying Connectivity in Wireless Sensor Networks: A Survey

OpenAIRE

Pearl Antil; Amita Malik

2014-01-01

Owing to random deployment, environmental factors, dynamic topology, and external attacks, emergence of holes in wireless sensor networks is inescapable. Hole is an area in sensor network around which sensors cease to sense or communicate due to drainage of battery or any fault, either temporary or permanent. Holes impair sensing and communication functions of network; thus their identification is a major concern. This paper discusses different types of holes and significance of hole detectio...

Modulated charge injection in p-type dye-sensitized solar cells using fluorene-based light absorbers.

Science.gov (United States)

Liu, Zonghao; Xiong, Dehua; Xu, Xiaobao; Arooj, Qudsia; Wang, Huan; Yin, Liyuan; Li, Wenhui; Wu, Huaizhi; Zhao, Zhixin; Chen, Wei; Wang, Mingkui; Wang, Feng; Cheng, Yi-Bing; He, Hongshan

2014-03-12

In this study, new pull-push arylamine-fluorene based organic dyes zzx-op1, zzx-op2, and zzx-op3 have been designed and synthesized for p-type dye-sensitized solar cells (p-DSCs). In zzx-op1, a di(p-carboxyphenyl)amine (DCPA) was used as an electron donor, a perylenemonoimide (PMID) as an electron acceptor, and a fluorene (FLU) unit with two aliphatic hexyl chains as a π-conjugated linker. In zzx-op2 and zzx-op3, a 3,4-ethylenedioxythiophene (EDOT) and a thiophene were inserted consecutively between PMID and FLU to tune the energy levels of the frontier molecular orbitals of the dyes. The structural modification broadened the spectral coverage from an onset of 700 nm for zzx-op1 to 750 nm for zzx-op3. The electron-rich EDOT and thiophene lifted up the HOMO (highest occupied molecular orbital) levels of zzx-op2 and zzx-op3, making their potential more negative than zzx-op1. When three dyes were employed in p-type DSCs with I(-)/I3(-) as a redox couple and NiO nanoparticles as hole materials, zzx-op1 exhibited impressive energy conversion efficiency of 0.184% with the open-circuit voltage (VOC) of 112 mV and the short-circuit current density (JSC) of 4.36 mA cm(-2) under AM 1.5G condition. Density functional theory calculations, transient photovoltage decay measurements, and electrochemical impedance spectroscopic studies revealed that zzx-op1 sensitized solar cell exhibited much higher charge injection efficiency (90.3%) than zzx-op2 (53.9%) and zzx-op3 (39.0%), indicating a trade-off between spectral broadening and electron injection driving force in p-type DSCs.

Modeling the fluid/soil interface erosion in the Hole Erosion Test

Directory of Open Access Journals (Sweden)

Kissi B.

2012-07-01

Full Text Available Soil erosion is a complex phenomenon which yields at its final stage to insidious fluid leakages under the hydraulic infrastructures known as piping and which are the main cause of their rupture. The Hole Erosion Test is commonly used to quantify the rate of piping erosion. In this work, The Hole Erosion Test is modelled by using Fluent software package. The aim is to predict the erosion rate of soil during the hole erosion test. The renormalization group theory – based k–ε turbulence model equations are used. This modelling makes it possible describing the effect of the clay concentration in flowing water on erosion. Unlike the usual one dimensional models, the proposed modelling shows that erosion is not uniform erosion along the hole length. In particular, the concentration of clay is found to increase noticeably the erosion rate.

Massive Black Holes and Galaxies

CERN Multimedia

CERN. Geneva

2016-01-01

Evidence has been accumulating for several decades that many galaxies harbor central mass concentrations that may be in the form of black holes with masses between a few million to a few billion time the mass of the Sun. I will discuss measurements over the last two decades, employing adaptive optics imaging and spectroscopy on large ground-based telescopes that prove the existence of such a massive black hole in the Center of our Milky Way, beyond any reasonable doubt. These data also provide key insights into its properties and environment. Most recently, a tidally disrupting cloud of gas has been discovered on an almost radial orbit that reached its peri-distance of ~2000 Schwarzschild radii in 2014, promising to be a valuable tool for exploring the innermost accretion zone. Future interferometric studies of the Galactic Center Black hole promise to be able to test gravity in its strong field limit.

Use of neutron capture gamma radiation for determining grade of iron ore in blast holes and exploration holes

International Nuclear Information System (INIS)

Eisler, P.L.; Huppert, P.; Mathew, P.J.; Wylie, A.W.; Youl, S.F.

1977-01-01

Neutron radiative capture and neutron-neutron logging have been applied to determining the grade of ore in dry blast holes and a dry exploration hole drilled into a layered iron deposit. Both thermal and epithermal neutron responses were measured as well as the gamma-ray responses due to neutron capture by iron and by hydrogen present in hydrated minerals. The results were fitted by a stepwise multiple linear regression technique to give expressions for mean grade of ore in the drill hole and 95% confidence intervals for estimation of this mean. For an overall range of ore grades of 20-68% Fe and a mean grade of 63% Fe, the confidence interval for prediction of mean grade for the neutron-gamma technique was 0.3% Fe for pooled data from all five blast holes and 0.8% Fe for a single hole. It was also shown that for this type of layered deposit a simpler neutron-neutron log incorporating simultaneous measurement of both thermal and epithermal neutron responses gave almost as good a grade prediction result for pooled results from five drill holes, namely 63+-0.4% Fe, as that obtained by the neutron-gamma technique. The results of both types of log are compared with those obtained by the spectral gamma-ray backscattering [Psub(z)] technique, or by logging of natural gamma radiations from the shale component of the ore. From this comparison conclusions are drawn regarding the most suitable technique to employ for determining grade of iron ore in various practical logging situations. (author)

Globular Cluster Candidates for Hosting a Central Black Hole

Science.gov (United States)

Noyola, Eva

2009-07-01

We are continuing our study of the dynamical properties of globular clusters and we propose to obtain surface brightness profiles for high concentration clusters. Our results to date show that the distribution of central surface brightness slopes do not conform to standard models. This has important implications for how they form and evolve, and suggest the possible presence of central intermediate-mass black holes. From our previous archival proposals {AR-9542 and AR-10315}, we find that many high concentration globular clusters do not have flat cores or steep central cusps, instead they show weak cusps. Numerical simulations suggest that clusters with weak cusps may harbor intermediate-mass black holes and we have one confirmation of this connection with omega Centauri. This cluster shows a shallow cusp in its surface brightness profile, while kinematical measurements suggest the presence of a black hole in its center. Our goal is to extend these studies to a sample containing 85% of the Galactic globular clusters with concentrations higher than 1.7 and look for objects departing from isothermal behavior. The ACS globular cluster survey {GO-10775} provides enough objects to have an excellent coverage of a wide range of galactic clusters, but it contains only a couple of the ones with high concentration. The proposed sample consists of clusters whose light profile can only be adequately measured from space-based imaging. This would take us close to completeness for the high concentration cases and therefore provide a more complete list of candidates for containing a central black hole. The dataset will also be combined with our existing kinematic measurements and enhanced with future kinematic studies to perform detailed dynamical modeling.

p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells

Science.gov (United States)

Irwin, Michael D.; Buchholz, D. Bruce; Hains, Alexander W.; Chang, Robert P. H.; Marks, Tobin J.

2008-01-01

To minimize interfacial power losses, thin (5–80 nm) layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF/Al solar cells. The interfacial NiO layer is deposited by pulsed laser deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 5.2% and enhances the fill factor to 69% and the open-circuit voltage (Voc) to 638 mV versus an ITO/P3HT:PCBM/LiF/Al control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

Joule-Thomson expansion of Kerr-AdS black holes

Energy Technology Data Exchange (ETDEWEB)

Oekcue, Oezguer; Aydiner, Ekrem [Istanbul University, Department of Physics, Faculty of Science, Istanbul (Turkey)

2018-02-15

In this paper, we study Joule-Thomson expansion for Kerr-AdS black holes in the extended phase space. A Joule-Thomson expansion formula of Kerr-AdS black holes is derived. We investigate both isenthalpic and numerical inversion curves in the T-P plane and demonstrate the cooling-heating regions for Kerr-AdS black holes. We also calculate the ratio between minimum inversion and critical temperatures for Kerr-AdS black holes. (orig.)

Study of recombination processes for 'electron-hole' pairs in germanium irradiated by {gamma} rays from {sup 60}Co using the photovoltaic effect in P-N junctions; Etude du processus de recombinaison des paires ''electron-trou'' dans le germanium irradie par les rayons {gamma} du cobalt 60 a l'aide de l'effet photovoltaique dans les jonctions P-N

Energy Technology Data Exchange (ETDEWEB)

Zahedi-Mochadam, A A [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1964-10-01

Using the photo-voltaic effect in p-n junctions, we have studied, during bombardment, the mechanism of the recombination of 'electron-hole' pairs in the presence of structure defects produced in germanium of the N and P types by {gamma} rays from a Co{sup 60} source. At 310 K the level of the recombination centres is situated 0.25 eV above the conduction band and the capture cross-sections of the holes and of the electrons have the respective values of: {sigma}{sub p} = 4 X 10{sup -15} cm{sup 2} and {sigma}{sub n} = 3 X 10{sup -15} cm{sup 2}. The value of {sigma}{sub n} appears to be under-estimated because the number of defects in P-type samples appears to be lower than that in N-type samples. These results lead to the conclusion that the interstitials are responsible for the recombination. At 80 K it has been found that in N-type samples, a shallow level exists at O.05 eV below the conduction band with a capture cross-section for the holes of {sigma}{sub p} {>=} 10{sup -14} cm{sup 2}. We believe that in this case the recombination of charge carriers is controlled by the neighbouring 'defect-interstitial' pairs. In P-type samples at low temperature, the life-time is practically constant during irradiation. This fact is attributed to a spontaneous annealing of defects ol purely electrical origin. In the last part of the work the study of the photo-voltaic effect applied to the problem of gamma radiation dosimetry is considered. It is shown that such dosimeters, based on this principle, make it possible to measure the intensity of gamma rays over a very wide range. (author) [French] En utilisant l'effet photovoltaique dans les jonctions p-n, nous avons etudie au cours du bombardement le mecanisme de recombinaison des paires 'electron-trou' en presence des defauts de structure introduits dans le germanium de type N et de type P par les rayons gamma d'une source de Co{sup 60}. A 310 K, le niveau des centres de recombinaison se trouve a 0,25 eV au-dessous de la bande

Sugar type and concentration preference of the Cape white-eye ...

African Journals Online (AJOL)

. ... Minke Witteveen, Mark Brown ... sugar type preference at any sugar concentration, but showed a preference for the lowest concentration (10%) of both hexose and sucrose solutions when presented with a range of sugar concentrations.

Carrier concentration induced ferromagnetism in semiconductors

International Nuclear Information System (INIS)

Story, T.

2007-01-01

In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

p,p'-DDE Induces Gonadal Intersex in Japanese Medaka (Oryzias latipes) at Environmentally Relevant Concentrations: Comparison with o,p'-DDT.

Science.gov (United States)

Sun, Jianxian; Wang, Chen; Peng, Hui; Zheng, Guomao; Zhang, Shiyi; Hu, Jianying

2016-01-05

Previous studies have reported high body burdens of dichlorodiphenyltrichloroethane (DDT) and its metabolites in wild fishes worldwide. This study evaluated the adverse effects of 1,1-dichloro-2,2-bis (p-chlorophenyl)-ethylene (p,p'-DDE) and o,p'-DDT on gonadal development and reproduction by exposing transgenic Japanese medaka (Oryzias latipes) from hatch for 100 days. While both p,p'-DDE and o,p'-DDT induced intersex in male medaka, the lowest observable effective concentration (LOEC) of o,p'-DDT was 57.7 ng/g ww, about 5-fold lower than that (272 ng/g ww) of p,p'-DDE. Since LOECs of both chemicals were comparable to the body concentrations in wild fish, DDT contamination would likely contribute to the occurrence of intersex observed in wild fish. Exposure to o,p'-DDT resulted in much higher expression of vitellogenin in liver of males than p,p'-DDE, accordant with the higher potency of o,p'-DDT than p,p'-DDE to induce intersex. This phenomenon could be partly explained by the significantly elevated levels of 17β-estradiol in plasma of males exposed to o,p'-DDT, in addition to its estrogenic activity via the estrogen receptor. Significantly lower fertilization (p = 0.006) and hatchability (p = 0.019) were observed in the 13 intersex males. This study for the first time demonstrated the induction of intersex and reproductive effects of p,p'-DDE and o,p'-DDT at environmentally relevant concentrations.

Black holes

International Nuclear Information System (INIS)

Feast, M.W.

1981-01-01

This article deals with two questions, namely whether it is possible for black holes to exist, and if the answer is yes, whether we have found any yet. In deciding whether black holes can exist or not the central role in the shaping of our universe played by the forse of gravity is discussed, and in deciding whether we are likely to find black holes in the universe the author looks at the way stars evolve, as well as white dwarfs and neutron stars. He also discusses the problem how to detect a black hole, possible black holes, a southern black hole, massive black holes, as well as why black holes are studied

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

International Nuclear Information System (INIS)

Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

2010-01-01

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Validity of Maxwell equal area law for black holes conformally coupled to scalar fields in AdS{sub 5} spacetime

Energy Technology Data Exchange (ETDEWEB)

Miao, Yan-Gang; Xu, Zhen-Ming [Nankai University, School of Physics, Tianjin (China)

2017-06-15

We investigate the P - V criticality and the Maxwell equal area law for a five-dimensional spherically symmetric AdS black hole with a scalar hair in the absence of and in the presence of a Maxwell field, respectively. Especially in the charged case, we give the exact P - V critical values. More importantly, we analyze the validity and invalidity of the Maxwell equal area law for the AdS hairy black hole in the scenarios without and with charges, respectively. Within the scope of validity of the Maxwell equal area law, we point out that there exists a representative van der Waals-type oscillation in the P - V diagram. This oscillating part, which indicates the phase transition from a small black hole to a large one, can be replaced by an isobar. The small and large black holes have the same Gibbs free energy. We also give the distribution of the critical points in the parameter space both without and with charges, and we obtain for the uncharged case the fitting formula of the co-existence curve. Meanwhile, the latent heat is calculated, which gives the energy released or absorbed between the small and large black hole phases in the isothermal-isobaric procedure. (orig.)

Tachyon hair on two-dimensional black holes

International Nuclear Information System (INIS)

Peet, A.; Susskind, L.; Thorlacius, L.

1993-01-01

Static black holes in two-dimensional string theory can carry tachyon hair. Configurations which are nonsingular at the event horizon have a nonvanishing asymptotic energy density. Such solutions can be smoothly extended through the event horizon and have a nonvanishing energy flux emerging from the past singularity. Dynamical processes will not change the amount of tachyon hair on a black hole. In particular, there will be no tachyon hair on a black hole formed in gravitational collapse if the initial geometry is the linear dilaton vacuum. There also exist static solutions with a finite total energy, which have singular event horizons. Simple dynamical arguments suggest that black holes formed in gravitational collapse will not have tachyon hair of this type

The DC Electrical Resistivity Curves of Bismuth-2212 Ceramic Superconductors: Evaluation of the Hole-Carrier Concentrations per-Cu Ion

Directory of Open Access Journals (Sweden)

nurmalita .

2016-04-01

Full Text Available In this study the samples of Bismuth ceramic superconductors were synthesized by the melt textured growth methods from a 2212 stoichiometric composition in order to obtain a large amount of pure Bi-2212. The effects of Pb substitution on the properties of Bi-based Bi2−xPbxSr2CaCu2Oy superconductor with x = 0, 0.2, and 0.4 were investigated by means of DC electrical resistivity measurements. It has been found that the hole-carrier concentrations per-Cu ion of the samples change independently of Pb content.

Black Hole Hunters Set New Distance Record

Science.gov (United States)

2010-01-01

around each other in a diabolic waltz, with a period of about 32 hours. The astronomers also found that the black hole is stripping matter away from the star as they orbit each other. "This is indeed a very 'intimate' couple," notes collaborator Robin Barnard. "How such a tightly bound system has been formed is still a mystery." Only one other system of this type has previously been seen, but other systems comprising a black hole and a companion star are not unknown to astronomers. Based on these systems, the astronomers see a connection between black hole mass and galactic chemistry. "We have noticed that the most massive black holes tend to be found in smaller galaxies that contain less 'heavy' chemical elements," says Crowther [2]. "Bigger galaxies that are richer in heavy elements, such as the Milky Way, only succeed in producing black holes with smaller masses." Astronomers believe that a higher concentration of heavy chemical elements influences how a massive star evolves, increasing how much matter it sheds, resulting in a smaller black hole when the remnant finally collapses. In less than a million years, it will be the Wolf-Rayet star's turn to go supernova and become a black hole. "If the system survives this second explosion, the two black holes will merge, emitting copious amounts of energy in the form of gravitational waves as they combine [3]," concludes Crowther. However, it will take some few billion years until the actual merger, far longer than human timescales. "Our study does however show that such systems might exist, and those that have already evolved into a binary black hole might be detected by probes of gravitational waves, such as LIGO or Virgo [4]." Notes [1] Stellar-mass black holes are the extremely dense, final remnants of the collapse of very massive stars. These black holes have masses up to around twenty times the mass of the Sun, as opposed to supermassive black holes, found in the centre of most galaxies, which can weigh a million to a

Conversion of p-tyrosine to p-tyramine in the isolated perfused rat kidney: Modulation by perfusate concentrations of p-tyrosine

International Nuclear Information System (INIS)

Brier, M.E.; Bowsher, R.R.; Henry, D.P.; Mayer, P.R.

1991-01-01

The authors used the isolated perfused rat kidney to evaluate the role of renal decarboxylation of p-tyrosine as the source of urinary p-tyramine. Kidneys were perfused with concentrations of p-tyrosine ranging from 0.02 mM to 2.0 mM. p-Tyramine was measured by a sensitive and specific radioenzymatic assay. An increase in the perfusate concentration of p-tyrosine resulted in a significant increase in p-tyramine production that was blocked by the addition of NSD-1015, an inhibitor of aromatic-1-amino decarboxylase (AADC). They conclude p-tyrosine is the precursor for the renal production of p-tyramine, renal AADC catalyzes the formation of urinary p-tyramine, synthesized p-tyramine is predominantly excreted in the urine, and p-tyramine synthesis is modulated by the arterial delivery of p-tyrosine to the kidney